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Sample records for antiferroelectric thick films

  1. Orientation-dependent energy storage performance and electrocaloric effect in PLZST antiferroelectric thick films

    OpenAIRE

    Zhao, Ye; Gao, Hongcheng; Hao, Xihong; Zhang, Qi

    2016-01-01

    The enhancement of the energy storage performance and electrocaloric effect (ECE) was achieved via orientation control. The 1.5-μm-(Pb0.97La0.02)(Zr0.73Sn0.22Ti0.05)O3 (PLZST) antiferroelectric (AFE) thick films with (111), (110), and (100) crystallographic orientations were successfully prepared via a sol-gel method. It was found that both the enhanced energy-storage density of 13.5 J/cm3 at 900 kV/cm and the corresponding temperature reduction of ΔT = 28.1 °C at room temperature were obtain...

  2. Antiferroelectric films of deuterated betaine phosphate

    Science.gov (United States)

    Balashova, E. V.; Krichevtsov, B. B.; Svinarev, F. B.; Zaitseva, N. V.

    2016-07-01

    Thin films of partially deuterated betaine phosphate have been grown by the evaporation on Al2O3(110) and NdGaO3(001) substrates with a preliminarily deposited structure of interdigitated electrodes. The grown films have a polycrystalline block structure with characteristic dimensions of blocks of the order of 0.1-1.5 mm. The degree of deuteration of the films D varies in the range of 20-50%. It has been found that, at the antiferroelectric phase transition temperature T c afe = 100-114 K, the fabricated structures exhibit an anomaly of the electrical capacitance C, which is not accompanied by a change in the dielectric loss tangent tanδ. The strong-signal dielectric response is characterized by the appearance of a ferroelectric nonlinearity at temperatures T > T c afe , which is transformed into an antiferroelectric nonlinearity at T diagram has been constructed.

  3. Energy-storage properties and electrocaloric effect of Pb(1-3x/2)LaxZr0.85Ti0.15O3 antiferroelectric thick films.

    Science.gov (United States)

    Zhao, Ye; Hao, Xihong; Zhang, Qi

    2014-07-23

    Antiferroelectric (AFE) thick (1 μm) films of Pb(1-3x/2)LaxZr0.85Ti0.15O3 (PLZT) with x = 0.08, 0.10, 0.12, and 0.14 were deposited on LaNiO3/Si (100) substrates by a sol-gel method. The dielectric properties, energy-storage performance, electrocaloric effect, and leakage current behavior were investigated in detail. With increasing La content, dielectric constant and saturated polarizations of the thick films were gradually decreased. A maximum recoverable energy-storage density of 38 J/cm(3) and efficiency of 71% were achieved in the thick films with x = 0.12 at room temperature. A large reversible adiabatic temperature change of ΔT = 25.0 °C was presented in the thick films with x = 0.08 at 127 °C at 990 kV/cm. Moreover, all the samples had a lower leakage current density below 10(-6) A/cm(2) at room temperature. These results indicated that the PLZT AFE thick films could be a potential candidate for applications in high energy-storage density capacitors and cooling devices.

  4. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.

    Science.gov (United States)

    Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Müller, Johannes; Kersch, Alfred; Schroeder, Uwe; Mikolajick, Thomas; Hwang, Cheol Seong

    2015-03-18

    The recent progress in ferroelectricity and antiferroelectricity in HfO2-based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3, BaTiO3, and SrBi2Ta2O9, which are considered to be feasible candidate materials for non-volatile semiconductor memory devices. However, these conventional ferroelectrics suffer from various problems including poor Si-compatibility, environmental issues related to Pb, large physical thickness, low resistance to hydrogen, and small bandgap. In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferro-electricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 μC cm(-2), and their coercive field (≈1-2 MV cm(-1)) is larger than conventional ferroelectric films by approximately one order of magnitude. Furthermore, they can be extremely thin (5 eV). These differences are believed to overcome the barriers of conventional ferroelectrics in memory applications, including ferroelectric field-effect-transistors and three-dimensional capacitors. Moreover, the coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors. PMID:25677113

  5. Fabrication of antiferroelectric PLZT films on metal foils

    International Nuclear Information System (INIS)

    Fabrication of high-dielectric-strength antiferroelectric (AFE) films on metallic foils is technically important for advanced power electronics. To that end, we have deposited crack-free Pb0.92La0.08Zr0.95Ti0.05O3 (PLZT 8/95/5) films on nickel foils by chemical solution deposition. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, a conductive buffer layer of lanthanum nickel oxide (LNO) was coated by chemical solution deposition on the nickel foil before the deposition of PLZT. Use of the LNO buffer allowed high-quality film-on-foil capacitors to be processed in air. With the PLZT 8/95/5 deposited on LNO-buffered Ni foils, we observed field- and thermal-induced phase transformations of AFE to ferroelectric (FE). The AFE-to-FE phase transition field, EAF = 225 kV/cm, and the reverse phase transition field, EFA = 190 kV/cm, were measured at room temperature on a ∼1.15 μm-thick PLZT 8/95/5 film grown on LNO-buffered Ni foils. The relative permittivities of the AFE and FE states were ∼600 and ∼730, respectively, with dielectric loss ∼0.04 at room temperature. The Curie temperature was ∼210 deg. C. The thermal-induced transition of AFE-to-FE phase occurred at ∼175 deg. C. Breakdown field strength of 1.2 MV/cm was measured at room temperature

  6. The effect of dc bias on the poled states in PNZST antiferroelectric thin films

    International Nuclear Information System (INIS)

    The effect on the polarization of antiferroelectric (AFE) PNZST ((Pb,Nb)(Zr,Sn,Ti)O3) thin films by ε-E (dc bias field) cycles was studied. It was shown that in these films the AFE ordering is destroyed by the application of a dc electrical field bias along the surface normal direction. After removing the dc bias the film relaxes slowly back to the initial AFE state. This phenomenon is dependent on the film thickness. The relaxation time decreases with increasing film thickness. With increasing storage time of the sample after removing the dc bias at room temperature or heat treatment above the Curie temperature, the AFE ordering can return. From the characteristics of hysteresis loops and ε-E behaviours, we can ascertain that this phenomenon could be attributed to the difference in the poled volume at the interfaces between the electrode and the film

  7. Direct current field adjustable ferroelectric behaviour in (Pb, Nb)(Zr, Sn, Ti)O3 antiferroelectric thin films

    International Nuclear Information System (INIS)

    (Pb, Nb)(Zr, Sn, Ti)O3 antiferroelectric (AFE) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si wafers using a sol-gel process. The electric field-induced antiferroelectric-to-ferroelectric (AFE-FE) phase transformation behaviour and its dependence on the temperature were examined by investigating the dielectric constant and dielectric loss versus temperature and electrical field. The AFE-FE phase transformation temperature can be adjusted as a function of the DC bias field and the thickness of the thin film. With increasing DC bias field, the FE phase region was enlarged, the AFE-FE transformation temperature shifted to lower temperature, and the ferroelectric-to-paraelectric transformation temperature shifted to higher temperature. With increasing film thickness, the modulation effect of the DC bias field on the AFE-FE phase transformation temperature is increased

  8. Antiferroelectricity in thin-film ZrO2 from first principles

    Science.gov (United States)

    Reyes-Lillo, Sebastian E.; Garrity, Kevin F.; Rabe, Karin M.

    2014-10-01

    Density-functional calculations are performed to investigate the experimentally reported field-induced phase transition in thin-film ZrO2 [J. Müller et al., Nano Lett. 12, 4318 (2012), 10.1021/nl302049k]. We find a small energy difference of ˜1 meV/f.u. between the nonpolar tetragonal and polar orthorhombic structures, characteristic of antiferroelectricity. The requisite first-order transition between the two phases, which atypically for antiferroelectrics have a group-subgroup relation, results from coupling to other zone-boundary modes, as we show with a Landau-Devonshire model. Tetragonal ZrO2 is thus established as a lead-free antiferroelectric with excellent dielectric properties and compatibility with silicon. In addition, we demonstrate that a ferroelectric phase of ZrO2 can be stabilized through epitaxial strain, and suggest an alternative stabilization mechanism through continuous substitution of Zr by Hf.

  9. Characteristics of antiferroelectric PbZrO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Il Won; Bae, Sang Bo; Kim, Kun Surb; Kim, Hong Keun [Ulsan Univ., Ulsan (Korea, Republic of); Lee, Jeong Sik [Kyungsung Univ., Pusan (Korea, Republic of); Jeong, Jung Hyun [Pukyong National Univ., Pusan (Korea, Republic of); Yamakawa, K. [Microelectronics Engineering Laboratory, Yokohama (Japan)

    1998-08-01

    Antiferroelectric PbZrO{sub 3} thin films were synthesized on Pt/Ti/SiO{sub 2}/Si substrates by using reactive magnetron co-sputtering followed by rapid thermal annealing. At an annealing temperature of 700.deg.C, the PbZrO{sub 3} films exhibited a pure perovskite phase with improved crystallinity as evidenced by higher and sharper (221) and (240) X-ray diffractometer peaks. From the scanning electron microscopy observations, the grains were found to have a columnar structure, and the average grain size was 0.3 - 0.5 {mu}m. An electric-field-forced transformation from the antiferroelectric phase to the ferroelectric phase was observed at room temperature and had a maximum polarization value of 41 {mu}C/cm{sup 2}. The average fields for exciting the ferroelectric state and that for reversing to the antiferroelectric state, as measured by charge versus voltage curves, were 357 kV/cm and 207 kV/cm, respectively. The dielectric constant was 196 with an associated dissipation factor of 0.043 at 100kHz. The frequency-dependent response indicated no dispersion below 1 MHz. According to the fatigue measurement, the value of P of the PbZrO{sub 3} film switched up to 10{sup 9} cycles which was a decrease of about 15% compared to the value for a virgin film.

  10. Characteristics of antiferroelectric PbZrO sub 3 thin films

    CERN Document Server

    Kim, I W; Kim, K S; Kim, H K; Lee Jae Sik; Jeong, J H; Yamakawa, K

    1998-01-01

    Antiferroelectric PbZrO sub 3 thin films were synthesized on Pt/Ti/SiO sub 2 /Si substrates by using reactive magnetron co-sputtering followed by rapid thermal annealing. At an annealing temperature of 700.deg.C, the PbZrO sub 3 films exhibited a pure perovskite phase with improved crystallinity as evidenced by higher and sharper (221) and (240) X-ray diffractometer peaks. From the scanning electron microscopy observations, the grains were found to have a columnar structure, and the average grain size was 0.3 - 0.5 mu m. An electric-field-forced transformation from the antiferroelectric phase to the ferroelectric phase was observed at room temperature and had a maximum polarization value of 41 mu C/cm sup 2. The average fields for exciting the ferroelectric state and that for reversing to the antiferroelectric state, as measured by charge versus voltage curves, were 357 kV/cm and 207 kV/cm, respectively. The dielectric constant was 196 with an associated dissipation factor of 0.043 at 100kHz. The frequency-de...

  11. Thick film hydrogen sensor

    Science.gov (United States)

    Hoffheins, Barbara S.; Lauf, Robert J.

    1995-01-01

    A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

  12. Ferroelectricity in antiferroelectric epitaxial PbZrO3 films with different orientations

    International Nuclear Information System (INIS)

    PbZrO3 (PZO) is a well known antiferroelectric (AFE) material with orthorhombic crystal structure. Due to antiparallel lead-ion shifts the remnant polarization is nominally zero. With a sufficiently large applied electric field, PZO undergoes a field-driven phase transition into a ferroelectric (FE), rhombohedral phase. However, the existence of a FE polarization along the c-axis of PZO (without applied field) was predicted by Jona et al. with an estimated value of 25 μC/cm2. We have investigated the temperature dependence of hysteresis and capacitance in PLD-grown epitaxial PZO films with two different orientations in the 4.2-400 K temperature range. It was observed that (120)o-oriented films (index o-orthorhombic) show a mixed AFE and FE behaviour on the entire temperature range, the FE behaviour being more stable at low temperatures. In contrast, the (001)o-oriented films show a FE hysteresis only at temperatures up to 60 K. Above 60 K the hysteresis splits into two loops, typical for antiferroelectrics. The results indicate the coexistence of FE and AFE properties in PZO films, particularly at low temperature

  13. Effects of raw materials on microstructure and dielectric properties of PbZrO3 antiferroelectric thin films prepared via sol-gel process

    International Nuclear Information System (INIS)

    Highlights: · The effects of starting materials on the microstructure and electrical of PZ AFE thin films were studied. · PZ films obtained from zirconium isopropoxide were highly (1 1 1)-oriented and had a more uniform surface microstructure. · PZ films with zirconium isopropoxide as starting material also displayed improved electrical properties. - Abstract: In this work, we report on two kinds of PbZrO3 (PZO) antiferroelectric (AFE) thin films with a thickness of about 700 nm, which were fabricated by using zirconium isopropoxide and zirconium nitrate as starting materials, respectively. The effects of the raw materials on microstructure and electrical properties of the PZO AFE films were studied in detail. X-ray diffraction and scanning electron microcopy results showed that the PZO films obtained from zirconium isopropoxide were highly (1 1 1)-oriented and had a more uniform surface microstructure. As a result, the PZO films from zirconium isopropoxide accordingly displayed better electrical properties, such as lager dielectric constant, increased saturated polarization, and smaller leakage current.

  14. Critical Thickness in Dewetting Films

    OpenAIRE

    Du, B; Z. Yang; Tsui, O. K. C.

    2001-01-01

    We study dewetting of thin polymer films with built-in topographical fluctuations produced by rubbing the film surface with a rayon cloth. By varying the density of imposed surface defects, we unambiguously distinguish spinodal dewetting, which dominates in liquid films thinner than a characteristic thickness = 13.3 nm, from heterogeneous nucleation in the thicker films. Invariance of this characteristic thickness upon more than a decade change in the defect density makes kinetic effect an un...

  15. Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times.

    Science.gov (United States)

    Ahn, Chang Won; Amarsanaa, Gantsooj; Won, Sung Sik; Chae, Song A; Lee, Dae Su; Kim, Ill Won

    2015-12-01

    We demonstrate a capacitor with high energy densities, low energy losses, fast discharge times, and high temperature stabilities, based on Pb(0.97)Y(0.02)[(Zr(0.6)Sn(0.4))(0.925)Ti(0.075)]O3 (PYZST) antiferroelectric thin-films. PYZST thin-films exhibited a high recoverable energy density of U(reco) = 21.0 J/cm(3) with a high energy-storage efficiency of η = 91.9% under an electric field of 1300 kV/cm, providing faster microsecond discharge times than those of commercial polypropylene capacitors. Moreover, PYZST thin-films exhibited high temperature stabilities with regard to their energy-storage properties over temperatures ranging from room temperature to 100 °C and also exhibited strong charge-discharge fatigue endurance up to 1 × 10(7) cycles. PMID:26606502

  16. Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times.

    Science.gov (United States)

    Ahn, Chang Won; Amarsanaa, Gantsooj; Won, Sung Sik; Chae, Song A; Lee, Dae Su; Kim, Ill Won

    2015-12-01

    We demonstrate a capacitor with high energy densities, low energy losses, fast discharge times, and high temperature stabilities, based on Pb(0.97)Y(0.02)[(Zr(0.6)Sn(0.4))(0.925)Ti(0.075)]O3 (PYZST) antiferroelectric thin-films. PYZST thin-films exhibited a high recoverable energy density of U(reco) = 21.0 J/cm(3) with a high energy-storage efficiency of η = 91.9% under an electric field of 1300 kV/cm, providing faster microsecond discharge times than those of commercial polypropylene capacitors. Moreover, PYZST thin-films exhibited high temperature stabilities with regard to their energy-storage properties over temperatures ranging from room temperature to 100 °C and also exhibited strong charge-discharge fatigue endurance up to 1 × 10(7) cycles.

  17. Dependence of film tension on the thickness of smectic films.

    Science.gov (United States)

    Jaquet, R; Schneider, F

    2003-02-01

    The film tension tau of free standing S(A) films has been measured for films with thicknesses between 2 and 150 layers. There is a clear increase of tau with the thickness for very thin films and a nonlinear slower increase for high thickness. The nonlinearity depends on the amount of liquid crystal accessible to the meniscus of the film during the drawing process. Several models are discussed that describe these effects. PMID:12636700

  18. Composition-dependent electrical properties of (Pb, La)(Zr, Sn, Ti)O3 antiferroelectric thin films grown on platinum-buffered silicon substrates

    International Nuclear Information System (INIS)

    (Pb, La)(Zr, Sn, Ti)O3 (PLZST) antiferroelectric (AFE) thin films with different compositions were deposited on Pt-buffered silicon wafers by the sol-gel process. The phase structure and the surface morphology of the PLZST AFE thin films were analysed by XRD and SEM, respectively. The electric field induced AFE-to-ferroelectric (AFE-FE) phase transformation behaviour of the PLZST thin films was examined by polarization versus field (P-E) and relative permittivity versus field (εr-E) measurements, with emphasis placed on composition-dependent phase switching field. The phase switching current was investigated as a function of a gradually changed dc electric field. Furthermore, the effect of the composition of the PLZST thin films on the Curie temperature (Tc) was also studied in detail

  19. Film thickness determination by grazing incidence diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Battiston, G. A.; Gerbasi, R. [CNR, Padua (Italy). Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati

    1996-09-01

    Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive.

  20. Leakage current characteristics and dielectric breakdown of antiferroelectric Pb0.92La0.08Zr0.95Ti0.05O3 film capacitors grown on metal foils

    International Nuclear Information System (INIS)

    We have grown crack-free antiferroelectric (AFE) Pb0.92La0.08Zr0.95Ti0.05O3 (PLZT) films on nickel foils by chemical solution deposition. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, we applied a conductive buffer layer of lanthanum nickel oxide (LNO) on the nickel foil by chemical solution deposition prior to the PLZT deposition. Use of the LNO buffer allowed high-quality film-on-foil capacitors to be prepared at high temperatures in air. With the AFE PLZT deposited on LNO-buffered Ni foils, we observed field-induced phase transformations of AFE to ferroelectric (FE). The AFE-to-FE phase transition field, EAF = 260 kV cm-1, and the reverse phase transition field, EFA = 220 kV cm-1, were measured at room temperature on a ∼1.15 μm thick PLZT film grown on LNO-buffered Ni foils. The relative permittivities of the AFE and FE states were ∼530 and ∼740, respectively, with dielectric loss -9 A cm-2 at room temperature under 87 kV cm-1 applied field. The breakdown behaviour of the AFE PLZT film-on-foil capacitors was studied by Weibull analysis. The mean breakdown time decreased exponentially with increasing applied field. The mean breakdown time was over 610 s when a field of 1.26 MV cm-1 was applied to a 1.15 μm thick AFE PLZT film-on-foil capacitor.

  1. Thick Film Temperature Sensors Using Standard Pastes

    OpenAIRE

    M. R. Haskard; Janoska, I.

    1986-01-01

    Standard thick film resistor pastes exhibit changes in their electrical characteristics when printed on top of dielectric layers. Of particular interest is the inherent change in their temperature coefficient of resistance. Simple temperature sensors were formed by deliberately printing thick film resistor pastes on top of larger area dielectric layers. Temperature tests carried out on these devices have shown that by selecting the correct paste combination and resistor aspect ratio stable, r...

  2. Screen Printed PZT Thick Films Using Composite Film Technology

    OpenAIRE

    Dorey, R; Whatmore, R; Beeby, S. P.; Torah, R; White, N.

    2003-01-01

    A spin coating composite sol gel technique for producing lead zirconate titanate (PZT) thick films has been modified for use with screen printing techniques. The resulting screen printing technique can be used to produce 10 ?m thick films in a single print. The resultant films are porous but the density can be increased through the use of repeated sol infiltration/pyrolysis treatments to yield a high density film. When fired at 710°C the composite screen printed films have dielectric and piez...

  3. Nano-Hydroxyapatite Thick Film Gas Sensors

    Science.gov (United States)

    Khairnar, Rajendra S.; Mene, Ravindra U.; Munde, Shivaji G.; Mahabole, Megha P.

    2011-12-01

    In the present work pure and metal ions (Co and Fe) doped hydroxyapatite (HAp) thick films have been successfully utilized to improve the structural, morphological and gas sensing properties. Nanocrystalline HAp powder is synthesized by wet chemical precipitation route, and ion exchange process is employed for addition of Co and Fe ions in HAp matrix. Moreover, swift heavy ion irradiation (SHI) technique is used to modify the surface of pure and metal ion exchanged HAp with various ion fluence. The structural investigation of pure and metal ion exchanged HAp thick films are carried out using X-ray diffraction and the presence of functional group is observed by means FTIR spectroscopy. Furthermore, surface morphology is visualized by means of SEM and AFM analysis. CO gas sensing study is carried out for, pure and metal ions doped, HAp thick films with detail investigation on operating temperature, response/recovery time and gas uptake capacity. The surface modifications of sensor matrix by SHI enhance the gas response, response/recovery and gas uptake capacity. The significant observation is here to note that, addition of Co and Fe in HAp matrix and surface modification by SHI improves the sensing properties of HAp films drastically resulting in gas sensing at relatively lower temperatures.

  4. Nano-Hydroxyapatite Thick Film Gas Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Khairnar, Rajendra S.; Mene, Ravindra U.; Munde, Shivaji G.; Mahabole, Megha P. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606 (India)

    2011-12-10

    In the present work pure and metal ions (Co and Fe) doped hydroxyapatite (HAp) thick films have been successfully utilized to improve the structural, morphological and gas sensing properties. Nanocrystalline HAp powder is synthesized by wet chemical precipitation route, and ion exchange process is employed for addition of Co and Fe ions in HAp matrix. Moreover, swift heavy ion irradiation (SHI) technique is used to modify the surface of pure and metal ion exchanged HAp with various ion fluence. The structural investigation of pure and metal ion exchanged HAp thick films are carried out using X-ray diffraction and the presence of functional group is observed by means FTIR spectroscopy. Furthermore, surface morphology is visualized by means of SEM and AFM analysis. CO gas sensing study is carried out for, pure and metal ions doped, HAp thick films with detail investigation on operating temperature, response/recovery time and gas uptake capacity. The surface modifications of sensor matrix by SHI enhance the gas response, response/recovery and gas uptake capacity. The significant observation is here to note that, addition of Co and Fe in HAp matrix and surface modification by SHI improves the sensing properties of HAp films drastically resulting in gas sensing at relatively lower temperatures.

  5. Percolation effect in thick film superconductors

    International Nuclear Information System (INIS)

    A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high Tc and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm2. The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed

  6. Percolation effect in thick film superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sali, R.; Harsanyi, G. [Technical Univ. of Budapest (Hungary)

    1994-12-31

    A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T{sub c} and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm{sup 2}. The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed.

  7. Experience With Polymer Thick Film Technology

    OpenAIRE

    Vesa Sortti; Raimo Hulkkonen; Eero Jarvinen

    1983-01-01

    The paper describes a user's experiences with polymer thick film resistor technology. The characteristics studied are resistance values and their distributing. Parameters affecting these characteristics are the material of the substrate, and the curing of the polymer resistor paste. The test conditions (temperature cycling, dip soldering, high temperature storaging) were chosen to simulate the environmental conditions, through which the polymer resistor circuits have to go during the assembly...

  8. Thick-film analysis: literature search and bibliography

    International Nuclear Information System (INIS)

    A literature search was conducted to support development of in-house diagnostic testing of thick film materials for hybrid microcircuits. A background literature review covered thick film formulation, processing, structure, and performance. Important material properties and tests were identified and several test procedures were obtained. Several tests were selected for thick film diagnosis at Bendix Kansas City. 126 references

  9. Thickness Dependence of Resistivity and Optical Reflectance of ITO Films

    Institute of Scientific and Technical Information of China (English)

    GAO Mei-Zhen; JOB R; XUE De-Sheng; FAHRNER W R

    2008-01-01

    @@ Indium-tin-oxide (ITO) films deposited on crystalline silicon wafer and Coming glass are prepared by directcurrent magnetron sputtering method at room temperature with various thicknesses. The thickness dependences of structure, resistance and optical reflectance of ITO films are characterized. The results show that when the film thickness is less than 4Ohm, the resistivity and optical reflectance of the ITO tilm changes remarkably with thickness. The optoelectrical properties trend to stabilize when the thickness is over 55 nm. The GXRD result implies that the ITO film begins to crystallize if only the thickness is large enough.

  10. Oriented Growth of PZT thick film embedded with PZT nanoparticles

    Institute of Scientific and Technical Information of China (English)

    DUAN Zhong-xia; YUAN Jie; ZHAO Quan-liang; LU Ran; CAO Mao-sheng

    2009-01-01

    This paper reports that dense and crack-free (100) oriented lead zirconate titanate (Pb(Zr0.52Ti0.48)O3,PZT) thick film embedded with PZT nanoparticles has been successfully fabricated on Pt/Cr/SiO2/Si substrate by using PT transition layer and PVP additive. The thick film possesses single-phase perovskite structure and perfectly (100) oriented. The (100) orientation degree of the PZT films strongly depended on annealing time and for the 4 μm-thick PZT film which was annealed at 700 ℃ for 5 min is the largest. The (100) orientation degree of the PZT thick film gradually strengthen along with the thickness of film decreasing. The 3 μm-thick PZT thick film which was annealed at 700 ℃ for 5 min has the strongest (100) orientation degree, which is 82. 3%.

  11. Measurement Method of the Thickness Uniformity for Polymer Films

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Several methods for investigating the thickness uniformity of polymer thin films are presented as well as their measurement principles. A comparison of these experimental methods is given.The cylindrical lightwave reflection method is found to can obtain the thickness distribution along a certain direction.It is a simple and suitable method to evaluate the film thickness uniformity.

  12. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  13. Integrated thick-film nanostructures based on spinel ceramics

    OpenAIRE

    Klym, Halyna; Hadzaman, Ivan; Shpotyuk, Oleh; Brunner, Michael

    2014-01-01

    Integrated temperature-humidity-sensitive thick-film structures based on spinel-type semiconducting ceramics of different chemical compositions and magnesium aluminate ceramics were prepared and studied. It is shown that temperature-sensitive thick-film structures possess good electrophysical characteristics in the region from 298 to 358 K. The change of electrical resistance in integrated thick-film structures is 1 order, but these elements are stable in time and can be successfully used for...

  14. Integrated thick-film nanostructures based on spinel ceramics.

    Science.gov (United States)

    Klym, Halyna; Hadzaman, Ivan; Shpotyuk, Oleh; Brunner, Michael

    2014-03-26

    Integrated temperature-humidity-sensitive thick-film structures based on spinel-type semiconducting ceramics of different chemical compositions and magnesium aluminate ceramics were prepared and studied. It is shown that temperature-sensitive thick-film structures possess good electrophysical characteristics in the region from 298 to 358 K. The change of electrical resistance in integrated thick-film structures is 1 order, but these elements are stable in time and can be successfully used for sensor applications.

  15. Use of buffy coat thick films in detecting malaria parasites in patients with negative conventional thick films

    Institute of Scientific and Technical Information of China (English)

    Chatnapa Duangdee; Noppadon Tangpukdee; Srivicha Krudsood; Polrat Wilairatana

    2012-01-01

    Objective: To determine the frequency of malaria parasite detection from the buffy coat blood ilms by using capillary tube in falciparum malaria patients with negative conventional thick ilms. Methods: Thirty six uncomplicated falciparum malaria patients confirmed by conventional thick and thin films were included in the study. The patients were treated with artemisinin combination therapy at Hospital for Tropical Diseases, Bangkok, Thailand for 28 day. Fingerpricks for conventional blood films were conducted every 6 hours until negative parasitemia, then daily fingerpricks for parasite checks were conducted until the patients were discharged from hospital. Blood samples were also concurrently collected in 3 heparinized capillary tubes at the same time of fingerpricks for conventional blood films when the prior parasitemia was negative on thin films and parasitemia was lower than 50 parasites/200 white blood cells by thick film. The first negative conventional thick films were compared with buffy coat thick films for parasite identification.Results:Out of 36 patients with thick films showing negative for asexual forms of parasites, buffy coat films could detect remaining 10 patients (27.8%) with asexual forms of Plasmodium falciparum. Conclusions: The study shows that buffy coat thick films are useful and can detect malarial parasites in 27.8% of patients whose conventional thick films show negative parasitemia.

  16. Influence of thickness on properties of plasticized oat starch films

    Directory of Open Access Journals (Sweden)

    Melicia Cintia Galdeano

    2013-08-01

    Full Text Available The aim of this study was to investigate the effect of thickness (between 80 and 120 µm on apparent opacity, water vapor permeability and mechanical properties (tensile and puncture of oat starch films plasticized with glycerol, sorbitol, glycerol:sorbitol mixture, urea and sucrose. Films were stored under 11, 57, 76 and 90% relative humidity (RH to study the mechanical properties. It was observed that the higher the thickness, the higher was the opacity values. Films without the plasticizer were more opaque in comparison with the plasticized ones. Glycerol:sorbitol films presented increased elongation with increasing thickness at all RH. Puncture force showed a strong dependence on the film thickness, except for the films plasticized with sucrose. In general, thickness did not affect the water permeability.

  17. Measurement of liquid crystal film thickness using interferometry

    International Nuclear Information System (INIS)

    Thickness measurements of thin films having thickness less than 1 µm are difficult to obtain by an interferometer. These difficulties arise from the overlap of the fringes from the upper and lower surfaces of the thin films. This paper presents a new methodology that mediates the consequences of this overlap and then implements it with thickness measurements of liquid crystal (LC) thin films. It takes into consideration the properties of light propagation within these films in order to rectify the images obtained from the interferometer. It assumes that the lower fringe pattern is much stronger that the upper one and hence the latter may be ignored. This occurs in situations where thin films are coated on substrates of significantly higher reflectivity, as happens when an LC thin film is coated on a polished iron substrate. The thickness and topography of LC thin films were experimentally measured with this methodology and were compared with measurements taken by an atomic force microscope

  18. Triaxial MEMS accelerometer with screen printed PZT thick film

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Almind, Ninia Sejersen; Brodersen, Simon Hedegaard;

    2010-01-01

    . In this work integration of a screen printed piezoelectric PZT thick film with silicon MEMS technology is shown. A high bandwidth triaxial accelerometer has been designed, fabricated and characterized. The voltage sensitivity is 0.31 mV/g in the vertical direction, 0.062 mV/g in the horizontal direction......Piezoelectric thick films have increasing interest due to the potential high sensitivity and actuation force for MEMS sensors and actuators. The screen printing technique is a promising deposition technique for realizing piezoelectric thick films in the thickness range from 10-100 mu m...

  19. Antiferroelectric liquid crystals

    OpenAIRE

    Benguigui, L.; Hardouin, F.

    1981-01-01

    Dielectric investigations have been undertaken in two thermotropic liquid crystal systems exhibiting a smectic A2 phase (i.e. with the layer spacing equal to twice the molecular length). The postulated antiferroelectric ordering has been supported by these measurements. There are anomalies in the dielectric constants ε∥ and ε〉 at the N-S A2 transition and an unusual low frequency relaxation, with a slight temperature dependence, appears around this transition and in the S A phases of these sy...

  20. Film-thickness Error Analysis of Optical Disk Systems

    Institute of Scientific and Technical Information of China (English)

    WANG Yang; GU Donghong; GAN Fuxi

    2001-01-01

    It is difficult to exactly control the film thickness of optical disk multilayer in the actual coating process. The thickness error becomes a main factor affecting the optical characters of the film system. The thickness error′s sensitivity factor of dielectric optical multilayer is derived from the optical matrix in this paper. The effect of the thickness error on the reflectivity or reflectivity contrast of the optical disk multilayer is analyzed with a numerical calculation. The sensitivities to thickness error for different layers or in different film-thickness ranges are compared and discussed. A sketchy method defining allowable thickness error is given. Some experimental results verify the applicability of our theoretical analysis.

  1. Antiferroelectricity in ZrO2 and related AXY compounds from first principles

    Science.gov (United States)

    Reyes-Lillo, Sebastian E.; Garrity, Kevin F.; Rabe, Karin M.

    2014-03-01

    The field-induced structural transition in antiferroelectrics has important technological applications in energy-storage capacitors and piezoelectric devices. Recently, antiferroelectricity was reported in zirconia (ZrO2), which is a widely-used material in electronic devices. In this work, we investigate the nature of antiferroelectricity in thin film ZrO2 and related AXY compounds. For ZrO2, we use first principles calculations to provide strong evidence that the experimentally reported field-induced ferroelectric phase is an intrinsic property of ZrO2. Using a Landau type model, we propose a switching mechanism from the nonpolar tetragonal phase to the orthorhombic polar structure, and we show how to access the ferroelectric phase through epitaxial strain. Drawing on these results, we reexamine a wide variety of related AXY compositions as candidates for antiferroelectrics. Physical descriptors that promote optimal functional properties in antiferroelectrics are identified, and results will be presented.

  2. Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases.

    Science.gov (United States)

    Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben; Zeng, Xierong; Huang, Haitao

    2015-06-24

    A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm(3) along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range.

  3. Advantages of PZT thick film for MEMS sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Lou-Moller, R.; Hansen, K.;

    2010-01-01

    For all MEMS devices a high coupling between the mechanical and electrical domain is desired. Figures of merit describing the coupling are important for comparing different piezoelectric materials. The existing figures of merit are discussed and a new figure of merit is introduced for a fair...... comparison of piezoelectric thin and thick films based MEMS devices, as cantilevers, beams, bridges and membranes. Simple analytical modeling is used to define the new figure of merit. The relevant figure of merits is compared for the piezoelectric material of interest for MEMS applications: ZnO, AIN, PZT...... thin film and PZT thick film. It is shown that MEMS sensors with the PZT thick film TF2100 from InSensor A/S have potential for significant higher voltage sensitivities compared to PZT thin film base MEMS sensors when the total thickness of the MEMS cantilever, beam, bridge or membrane is high...

  4. Screen-printed piezoceramic thick films for miniaturised devices

    DEFF Research Database (Denmark)

    Lou-Moeller, R.; Hindrichsen, Christian Carstensen; Thamdrup, Lasse Højlund;

    2007-01-01

    The development towards smaller devices with more functions integrated calls for new and improved manufacturing processes. The screen-printing process is quite well suited for miniaturised and integrated devices, since thick films can be produced in this manner without the need for further...... machining. On the other hand, the process of screen printing thick films involves potential problems of thermal matching and chemical compatibility at the processing temperatures between the functional film, the substrate and the electrodes. As an example of such a miniaturised device, a MEMS accelerometer...... based on PZT thick film will be presented. The design and process flow of this accelerometer has been optimised by means of finite element modelling (FEMLAB (c)). Consequently it has proved possible to eliminate post-processing steps after the screen printing of the PZT thick film....

  5. Barium titanate thick films prepared by screen printing technique

    Directory of Open Access Journals (Sweden)

    Mirjana M. Vijatović

    2010-06-01

    Full Text Available The barium titanate (BaTiO3 thick films were prepared by screen printing technique using powders obtained by soft chemical route, modified Pechini process. Three different barium titanate powders were prepared: i pure, ii doped with lanthanum and iii doped with antimony. Pastes for screen printing were prepared using previously obtained powders. The thick films were deposited onto Al2O3 substrates and fired at 850°C together with electrode material (silver/palladium in the moving belt furnace in the air atmosphere. Measurements of thickness and roughness of barium titanate thick films were performed. The electrical properties of thick films such as dielectric constant, dielectric losses, Curie temperature, hysteresis loop were reported. The influence of different factors on electrical properties values was analyzed.

  6. Integrated thick-film nanostructures based on spinel ceramics.

    Science.gov (United States)

    Klym, Halyna; Hadzaman, Ivan; Shpotyuk, Oleh; Brunner, Michael

    2014-01-01

    Integrated temperature-humidity-sensitive thick-film structures based on spinel-type semiconducting ceramics of different chemical compositions and magnesium aluminate ceramics were prepared and studied. It is shown that temperature-sensitive thick-film structures possess good electrophysical characteristics in the region from 298 to 358 K. The change of electrical resistance in integrated thick-film structures is 1 order, but these elements are stable in time and can be successfully used for sensor applications. PMID:24670141

  7. Thick epitaxial YIG films with narrow FMR linewidth

    OpenAIRE

    Syvorotka, I. I.; Syvorotka, I. M.; Ubizskii, S.B.

    2012-01-01

    The La-doped yttrium iron garnet (YIG) films with thickness up to 130 μm were grown by liquid phase epitaxy (LPE) method. All grown thick films demonstrate “mirror” and “striation” types of surface morphology that depend from film growth temperature and thickness. Addition of B2O3 is favourable to a change the surface morphology into a “mirror” one. The mechanisms of the morphological changes are discussed. It was found that the ferromagnetic resonance (FMR) linewidth appreciably dep...

  8. Lateral Interactions in Monolayer Thick Mercury Films

    Science.gov (United States)

    Kime, Yolanda Jan

    An understanding of lateral adatom-adatom interactions is often an important part of understanding electronic structure and adsorption energetics in monolayer thick films. In this dissertation I use angle-resolved photoemission and thermal desorption spectroscopies to explore the relationship between the adatom-adatom interaction and other characteristics of the adlayer, such as electronic structure, defects, or coexistent structural phases in the adlayer. Since Hg binds weakly to many substrates, the lateral interactions are often a major contribution to the dynamics of the overlayer. Hg adlayer systems are thus ideal for probing lateral interactions. The electronic structures of Hg adlayers on Ag(100), Cu(100), and Cu_3Au(100) are studied with angle-resolved ultraviolet photoemission. The Hg atomic 5d_{5/2} electronic band is observed to split into two levels following adsorption onto some surfaces. The energetic splitting of the Hg 5d_{5/2} level is found to be directly correlated to the adlayer homogeneous strain energy. The existence of the split off level also depends on the order or disorder of the Hg adlayer. The energetics of Hg adsorption on Cu(100) are probed using thermal desorption spectroscopy. Two different ordered adlayer structures are observed for Hg adsorption on Cu(100) at 200 K. Under some adsorption conditions and over a range of exposures, the two phases are seen to coexist on the surface prior to the thermal desorption process. A phase transition from the more dense to the less dense phase is observed to occur during the thermal desorption process. Inherent differences in defect densities are responsible for the observed differences between lateral interactions measured previously with equilibrium (atom beam scattering) and as measured by the non-equilibrium (thermal desorption) technique reported here. Theoretical and experimental evidence for an indirect through-metal interaction between adatoms is also discussed. Although through

  9. Refractive index of nanoscale thickness films measured by Brewster refractometry

    CERN Document Server

    Tikhonov, E A; Malyukin, Yu V

    2015-01-01

    It is shown that reflective laser refractometery at Brewster angle can be usefull for precision measurements of refractive indexes (RI) in the transparency band of various films of nanoscale thickness. The RI measurements of nanoscale porous film on the basis of gadolinium orthosilicate and quartz have been carried out as first experience. It is shown that surface light scattering in such films that is connected with clustering of nanoscale pores can decrease the accuracy of the RI measurements at Brewster angle. Estimated physical dependence RI stipulated by the film thickness reduction (3D-2D transition) in the range of (20-160)nm has not been not detected.

  10. Thin film thickness measurements using Scanning White Light Interferometry

    International Nuclear Information System (INIS)

    Scanning White Light Interferometry is a well-established technique for providing accurate surface roughness measurements and three dimensional topographical images. Here we report on the use of a variant of Scanning White Light Interferometry called coherence correlation interferometry which is now capable of providing accurate thickness measurements from transparent and semi-transparent thin films with thickness below 1 μm. This capability will have many important applications which include measurements on optical coatings, displays, semiconductor devices, transparent conducting oxides and thin film photovoltaics. In this paper we report measurements of thin film thickness made using coherence correlation interferometry on a variety of materials including metal-oxides (Nb2O5 and ZrO2), a metal-nitride (SiNx:H), a carbon-nitride (SiCxNy:H) and indium tin oxide, a transparent conducting oxide. The measurements are compared with those obtained using spectroscopic ellipsometry and in all cases excellent correlation is obtained between the techniques. A key advantage of this capability is the combination of thin film thickness and surface roughness and other three-dimensional metrology measurements from the same sample area. - Highlights: • Capability to make thin film measurements with sub-nanometre accuracy • Measurements of thin film thickness made on metal-oxides, nitrides and carbon-nitrides • Excellent correlation with thickness measurements using spectroscopic ellipsometry • Thin film measurement and nanometrology from the same sample area

  11. Thin film thickness measurements using Scanning White Light Interferometry

    Energy Technology Data Exchange (ETDEWEB)

    Maniscalco, B.; Kaminski, P.M.; Walls, J.M., E-mail: J.M.Walls@lboro.ac.uk

    2014-01-01

    Scanning White Light Interferometry is a well-established technique for providing accurate surface roughness measurements and three dimensional topographical images. Here we report on the use of a variant of Scanning White Light Interferometry called coherence correlation interferometry which is now capable of providing accurate thickness measurements from transparent and semi-transparent thin films with thickness below 1 μm. This capability will have many important applications which include measurements on optical coatings, displays, semiconductor devices, transparent conducting oxides and thin film photovoltaics. In this paper we report measurements of thin film thickness made using coherence correlation interferometry on a variety of materials including metal-oxides (Nb{sub 2}O{sub 5} and ZrO{sub 2}), a metal-nitride (SiN{sub x}:H), a carbon-nitride (SiC{sub x}N{sub y}:H) and indium tin oxide, a transparent conducting oxide. The measurements are compared with those obtained using spectroscopic ellipsometry and in all cases excellent correlation is obtained between the techniques. A key advantage of this capability is the combination of thin film thickness and surface roughness and other three-dimensional metrology measurements from the same sample area. - Highlights: • Capability to make thin film measurements with sub-nanometre accuracy • Measurements of thin film thickness made on metal-oxides, nitrides and carbon-nitrides • Excellent correlation with thickness measurements using spectroscopic ellipsometry • Thin film measurement and nanometrology from the same sample area.

  12. Modeling parameter extraction for DNQ-novolak thick film resists

    Science.gov (United States)

    Henderson, Clifford L.; Scheer, Steven A.; Tsiartas, Pavlos C.; Rathsack, Benjamen M.; Sagan, John P.; Dammel, Ralph R.; Erdmann, Andreas; Willson, C. Grant

    1998-06-01

    Optical lithography with special thick film DNQ-novolac photoresists have been practiced for many years to fabricate microstructures that require feature heights ranging from several to hundreds of microns such as thin film magnetic heads. It is common in these thick film photoresist systems to observe interesting non-uniform profiles with narrow regions near the top surface of the film that transition into broader and more concave shapes near the bottom of the resist profile. A number of explanations have been proposed for these various observations including the formation of `dry skins' at the resist surface and the presence of solvent gradients in the film which serve to modify the local development rate of the photoresist. There have been few detailed experimental studies of the development behavior of thick films resists. This has been due to part to the difficulty in studying these films with conventional dissolution rate monitors (DRMs). In general, this lack of experimental data along with other factors has made simulation and modeling of thick film resist performance difficult. As applications such as thin film head manufacturing drive to smaller features with higher aspect ratios, the need for accurate thick film simulation capability continues to grow. A new multi-wavelength DRM tool has been constructed and used in conjunction with a resist bleaching tool and rigorous parameter extraction techniques to establish exposure and development parameters for two thick film resists, AZTM 4330-RS and AZTM 9200. Simulations based on these parameters show good agreement to resist profiles for these two resists.

  13. Thickness-dependent electrocaloric effect in mixed-phase Pb0.87Ba0.1 La0.02(Zr0.6Sn0.33Ti0.07)O3 thin films

    Science.gov (United States)

    Correia, T. M.

    2016-01-01

    Full-perovskite Pb0.87Ba0.1La0.02(Zr0.6Sn0.33Ti0.07)O3 (PBLZST) thin films were fabricated by a sol–gel method. These revealed both rhombohedral and tetragonal phases, as opposed to the full-tetragonal phase previously reported in ceramics. The fractions of tetragonal and rhombohedral phases are found to be strongly dependent on film thickness. The fraction of tetragonal grains increases with increasing film thickness, as the substrate constraint throughout the film decreases with film thickness. The maximum of the dielectric constant (εm) and the corresponding temperature (Tm) are thickness-dependent and dictated by the fraction of rhombohedral and tetragonal phase, with εm reaching a minimum at 400 nm and Tm shifting to higher temperature with increasing thickness. With the thickness increase, the breakdown field decreases, but field-induced antiferroelectric–ferroelectric (EAFE−FE) and ferroelectric–antiferroelectric (EFE−AFE) switch fields increase. The electrocaloric effect increases with increasing film thickness. This article is part of the themed issue ‘Taking the temperature of phase transitions in cool materials’. PMID:27402937

  14. The effect of thickness on the magnetic properties of melt-processed YBCO thick films

    International Nuclear Information System (INIS)

    Magnetic properties of melt-processed YBa2Cu3O7-δ thick films have been measured and correlated with features in the microstructure at 4.2 and 77 K for film thicknesses between 50 and 140 μm. A pronounced peak has been observed in both the measured volume magnetization and calculated length scale over which current flows at a film thickness of approximately 53 μm and 4.2 K in fields of up to 10 T. An intra 'hub-spoke' (H-S) type grain current dominates the volume magnetization at this film thickness. Measurements at 77 K, on the other hand, exhibit a peak at 80 μm, the magnitude of which varies significantly with applied field. This correlates well with observed increased connectivity between individual H-S grains and may be accounted for by the flow of inter H-S grain current. The H-S grains transform to a more granular microstructure for films greater than approximately 100 μm thick which is characterized by the presence of smaller diameter current-carrying loops. This is observed as a decrease in the volume magnetization at 4.2 K and a levelling off of this parameter at 77 K with increasing film thickness. Further evidence for the presence of intra H-S and inter H-S grain critical current densities at 4.2 K in films up to a thickness of 80 μm has been observed from length-scale analysis as a function of the difference between maximum and applied magnetic field. A qualitative model for the volume magnetization of the films at 4.2 K in terms of individual contributions from intra H-S grain, inter H-S grain and granular Jc components is proposed. (author)

  15. Characterization and comparison of thermistor thick films. Topical report

    International Nuclear Information System (INIS)

    Four thermistor thick film inks were evaluated for HMC production use. The physical, chemical and electrical properties of the wet inks and fired films were measured. Variations in the physical and chemical properties of the inks were used to explain variations in thermistor electrical resistance and temperature coefficient of resistance

  16. Sputtering of Thick Deuterium Films by KeV Electrons

    DEFF Research Database (Denmark)

    Thestrup Nielsen, Birgitte; Svendsen, Winnie Edith; Schou, Jørgen;

    1994-01-01

    Sputtering of thick films of solid deuterium up to several μm by keV electrons is reported for the first time. The sputtering yield increases within a narrow range of thicknesses around 1.6 μm by about 2 orders of magnitude for 1.5 keV electrons. A similar behavior has not been observed for ion...

  17. Glue Film Thickness Measurements by Spectral Reflectance

    International Nuclear Information System (INIS)

    Spectral reflectance was used to determine the thickness of thin glue layers in a study of the effect of the glue on radiance and reflectance measurements of shocked-tin substrates attached to lithium fluoride windows. Measurements based on profilometry of the components were found to be inaccurate due to flatness variations and deformation of the tin substrate under pressure during the gluing process. The accuracy of the spectral reflectance measurements were estimated to be ±0.5 (micro)m, which was sufficient to demonstrate a convincing correlation between glue thickness and shock-generated light.

  18. One-step aerosol synthesis of nanoparticle agglomerate films: simulation of film porosity and thickness

    Energy Technology Data Exchange (ETDEWEB)

    Maedler, Lutz; Lall, Anshuman A; Friedlander, Sheldon K [Nanoparticle Technology and Air Quality Laboratory, Department of Chemical and Biomolecular Engineering, University of California, Los Angeles (UCLA), 5531-G Boelter Hall, Los Angeles, CA 90095 (United States)

    2006-10-14

    A method is described for designing nanoparticle agglomerate films with desired film porosity and film thickness. Nanoparticle agglomerates generated in aerosol reactors can be directly deposited on substrates to form uniform porous films in one step, a significant advance over existing technologies. The effect of agglomerate morphology and deposition mechanism on film porosity and thickness are discussed. Film porosity was calculated for a given number and size of primary particles that compose the agglomerates, and fractal dimension. Agglomerate transport was described by the Langevin equation of motion. Deposition enhancing forces such as thermophoresis are incorporated in the model. The method was validated for single spherical particles using previous theoretical studies. An S-shape film porosity dependence on the particle Peclet number typical for spherical particles was also observed for agglomerates, but films formed from agglomerates had much higher porosities than films from spherical particles. Predicted film porosities compared well with measurements reported in the literature. Film porosities increased with the number of primary particles that compose an agglomerate and higher fractal dimension agglomerates resulted in denser films. Film thickness as a function of agglomerate deposition time was calculated from the agglomerate deposition flux in the presence of thermophoresis. The calculated film thickness was in good agreement with measured literature values. Thermophoresis can be used to reduce deposition time without affecting the film porosity.

  19. Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 thin membranes

    Science.gov (United States)

    Zuo, Zheng-Hu; Zhan, Qing-Feng; Chen, Bin; Yang, Hua-Li; Liu, Yi-Wei; Liu, Lu-Ping; Xie, Ya-Li; Li, Run-Wei

    2016-08-01

    Free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 (PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition. X-ray diffraction patterns indicate that free-standing PZT(95/5) film possesses an a-axis preferred orientation. The critical electric field for the 300-nm-thick free-standing PZT(95/5) film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm, but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT(95/5) film. The energy storage density and energy efficiency of the substrate-clamped PZT(95/5) film are 6.49 J/cm3 and 54.5%, respectively. In contrast, after removing the substrate, the energy storage density and energy efficiency of the free-standing PZT(95/5) film are enhanced up to 17.45 J/cm3 and 67.9%, respectively. Project supported by the National Natural Science Foundation of China (Grant Nos. 11374312, 51401230, and 51522105) and the Fund for Ningbo Municipal Science and Technology Innovation Team, China (Grant No. 2015B11001).

  20. Determination of hydration film thickness using atomic force microscopy

    Institute of Scientific and Technical Information of China (English)

    PENG Changsheng; SONG Shaoxian; GU Qingbao

    2005-01-01

    Dispersion of a solid particle in water may lead to the formation of hydration film on the particle surface, which can strongly increase the repulsive force between the particles and thus strongly affect the stability of dispersions. The hydration film thickness, which varies with the variation of property of suspension particles, is one of the most important parameters of hydration film, and is also one of the most difficult parameters that can be measured accurately. In this paper, a method, based on force-distance curve of atomic force microscopy, for determining the hydration film thickness of particles is developed. The method utilizes the difference of cantilever deflection before, between and after penetrating the hydration films between tip and sample, which reflect the difference of slope on the force-distance curve. 3 samples, mica, glass and stainless steel, were used for hydration thickness determination, and the results show that the hydration film thickness between silicon tip and mica, glass and stainless steel are 30.0(2.0, 29.0(1.0 and 32.5(2.5 nm, respectively.

  1. Antiferroelectric Shape Memory Ceramics

    Directory of Open Access Journals (Sweden)

    Kenji Uchino

    2016-05-01

    Full Text Available Antiferroelectrics (AFE can exhibit a “shape memory function controllable by electric field”, with huge isotropic volumetric expansion (0.26% associated with the AFE to Ferroelectric (FE phase transformation. Small inverse electric field application can realize the original AFE phase. The response speed is quick (2.5 ms. In the Pb0.99Nb0.02[(Zr0.6Sn0.41-yTiy]0.98O3 (PNZST system, the shape memory function is observed in the intermediate range between high temperature AFE and low temperature FE, or low Ti-concentration AFE and high Ti-concentration FE in the composition. In the AFE multilayer actuators (MLAs, the crack is initiated in the center of a pair of internal electrodes under cyclic electric field, rather than the edge area of the internal electrodes in normal piezoelectric MLAs. The two-sublattice polarization coupling model is proposed to explain: (1 isotropic volume expansion during the AFE-FE transformation; and (2 piezoelectric anisotropy. We introduce latching relays and mechanical clampers as possible unique applications of shape memory ceramics.

  2. Changes in the temperature-dependent specific volume of supported polystyrene films with film thickness

    Science.gov (United States)

    Huang, Xinru; Roth, Connie B.

    2016-06-01

    Recent studies have measured or predicted thickness-dependent shifts in density or specific volume of polymer films as a possible means of understanding changes in the glass transition temperature Tg(h) with decreasing film thickness with some experimental works claiming unrealistically large (25%-30%) increases in film density with decreasing thickness. Here we use ellipsometry to measure the temperature-dependent index of refraction of polystyrene (PS) films supported on silicon and investigate the validity of the commonly used Lorentz-Lorenz equation for inferring changes in density or specific volume from very thin films. We find that the density (specific volume) of these supported PS films does not vary by more than ±0.4% of the bulk value for film thicknesses above 30 nm, and that the small variations we do observe are uncorrelated with any free volume explanation for the Tg(h) decrease exhibited by these films. We conclude that the derivation of the Lorentz-Lorenz equation becomes invalid for very thin films as the film thickness approaches ˜20 nm, and that reports of large density changes greater than ±1% of bulk for films thinner than this likely suffer from breakdown in the validity of this equation or in the difficulties associated with accurately measuring the index of refraction of such thin films. For larger film thicknesses, we do observed small variations in the effective specific volume of the films of 0.4 ± 0.2%, outside of our experimental error. These shifts occur simultaneously in both the liquid and glassy regimes uniformly together starting at film thicknesses less than ˜120 nm but appear to be uncorrelated with Tg(h) decreases; possible causes for these variations are discussed.

  3. Changes in the temperature-dependent specific volume of supported polystyrene films with film thickness.

    Science.gov (United States)

    Huang, Xinru; Roth, Connie B

    2016-06-21

    Recent studies have measured or predicted thickness-dependent shifts in density or specific volume of polymer films as a possible means of understanding changes in the glass transition temperature Tg(h) with decreasing film thickness with some experimental works claiming unrealistically large (25%-30%) increases in film density with decreasing thickness. Here we use ellipsometry to measure the temperature-dependent index of refraction of polystyrene (PS) films supported on silicon and investigate the validity of the commonly used Lorentz-Lorenz equation for inferring changes in density or specific volume from very thin films. We find that the density (specific volume) of these supported PS films does not vary by more than ±0.4% of the bulk value for film thicknesses above 30 nm, and that the small variations we do observe are uncorrelated with any free volume explanation for the Tg(h) decrease exhibited by these films. We conclude that the derivation of the Lorentz-Lorenz equation becomes invalid for very thin films as the film thickness approaches ∼20 nm, and that reports of large density changes greater than ±1% of bulk for films thinner than this likely suffer from breakdown in the validity of this equation or in the difficulties associated with accurately measuring the index of refraction of such thin films. For larger film thicknesses, we do observed small variations in the effective specific volume of the films of 0.4 ± 0.2%, outside of our experimental error. These shifts occur simultaneously in both the liquid and glassy regimes uniformly together starting at film thicknesses less than ∼120 nm but appear to be uncorrelated with Tg(h) decreases; possible causes for these variations are discussed.

  4. Analyses of microstructure in Bi(2223) thick film

    International Nuclear Information System (INIS)

    The mass densities of the presintering thick films (TFs) at different pressures were measured. The author measured the thicknesses of the silver-clamped and silver-sheathed TFs sintered three times after moving silver and observed the configurations of both the surface and cross section of these samples by SEM photographs, respectively. As the experimental results showed, the reason why the critical current density of TFs is two order lower than that of thin films is probably as follows: during the sintering process, the air in the powder produced many holes which made the link junctions of the grains and the texture structure of the TF weak. A method of decreasing holes and enhancing critical current density of thick film is proposed

  5. Thick-film materials for silicon photovoltaic cell manufacture

    Science.gov (United States)

    Field, M. B.

    1977-01-01

    Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

  6. Performance of supercapacitor with electrodeposited ruthenium oxide film electrodes—effect of film thickness

    Science.gov (United States)

    Park, Bong-Ok; Lokhande, C. D.; Park, Hyung-Sang; Jung, Kwang-Deog; Joo, Oh-Shim

    Thin-film ruthenium oxide electrodes are prepared by cathodic electrodeposition on a titanium substrate. Different deposition periods are used to obtain different film thicknesses. The electrodes are used to form a supercapacitor with a 0.5 M H 2SO 4 electrolyte. The specific capacitance and charge-discharge periods are found to be dependent on the electrode thickness. A maximum specific capacitance of 788 F g -1 is achieved with an electrode thickness of 0.0014 g cm -2. These results are explained by considering the morphological changes that take place with increasing film thickness.

  7. Inhomogeneous Growth of Micrometer Thick Plasma Polymerized Films.

    Science.gov (United States)

    Akhavan, Behnam; Menges, Bernhard; Förch, Renate

    2016-05-17

    Plasma polymerization is traditionally recognized as a homogeneous film-forming technique. It is nevertheless reasonable to ask whether micrometer thick plasma polymerized structures are really homogeneous across the film thickness. Studying the properties of the interfacial, near-the-substrate (NTS) region in plasma polymer films represents particular experimental challenges due to the inaccessibility of the buried layers. In this investigation, a novel non-destructive approach has been utilized to evaluate the homogeneity of plasma polymerized acrylic acid (PPAc) and 1,7-octadiene (PPOD) films in a single measurement. Studying the variations of refractive index throughout the depth of the films was facilitated by a home-built surface plasmon resonance (SPR)/optical waveguide (OWG) spectroscopy setup. It has been shown that the NTS layer of both PPAc and PPOD films exhibits a significantly lower refractive index than the bulk of the film that is believed to indicate a higher concentration of internal voids. Our results provide new insights into the growth mechanisms of plasma polymer films and challenge the traditional view that considers plasma polymers as homogeneous and continuous structures. PMID:27111265

  8. MEMS-based thick film PZT vibrational energy harvester

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Thyssen, Anders;

    2011-01-01

    We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using...... a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz....

  9. Electrochemical Migration in Thick-Film IC-S

    OpenAIRE

    Gabor Harsanyi; Gabor Ripka

    1985-01-01

    The phenomenon of silver migration in conductor-insulator systems is well known, but it is less known that several other metals can exhibit migration. This paper tries to give a short summary of the phenomenon as applied to thick-film circuits.Tests have been made on different conductors used in thick-film circuits. The dendrites formed by electrochemical migration were examined by scanning electron microscope, and also by wavelength-dispersive analysis of the emitted x-rays. By obtaining sec...

  10. Experimental rig for measuring lubricant film thickness in rolling bearings

    OpenAIRE

    Zhang, Xingnan; Jablonka, Karolina Anna; Glovnea, Romeo

    2014-01-01

    Electrical capacitance has been applied in the past for measuring the lubricant film thickness in rolling element bearings. The main difficulty arises from the fact that the measured capacitance is a combination of the capacitances of many rolling elements, which come in contact with both the inner and outer rings. Besides, the capacitance of the Hertzian contact itself and the surrounding area must also be separated. It results in a complex system which, in order to be solved for the film ...

  11. Electroplated thick-film cobalt platinum permanent magnets

    Science.gov (United States)

    Oniku, Ololade D.; Qi, Bin; Arnold, David P.

    2016-10-01

    The material and magnetic properties of multi-micron-thick (up to 6 μm) L10 CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25-200 mA/cm2), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L10 ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (Br ~0.8 T, Hci ~800 kA/m, squareness close to 0.9, and BHmax of 100 kJ/m3) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm2, pH of 7, and subsequently annealed at 675 °C for 30 min.

  12. Polymer thick-film sensors: possibilities for smartcard biometrics

    NARCIS (Netherlands)

    Henderson, N.J.; Papakostas, T.V.; White, N.M.; Hartel, P.H.

    2002-01-01

    In this paper the potential of polymer thick-film sensors are assessed for use as biometric sensors on smartcards. Piezoelectric and piezoresistive sensors have been printed on flexible polyester, then bonded to smartcard blanks. The tactile interaction of a person with these sensors has been invest

  13. Screen printed thick film based pMUT arrays

    DEFF Research Database (Denmark)

    Hedegaard, Tobias; Pedersen, T; Thomsen, Erik Vilain;

    2008-01-01

    This article reports on the fabrication and characterization of lambda-pitched piezoelectric micromachined ultrasound transducer (pMUT) arrays fabricated using a unique process combining conventional silicon technology and low cost screen printing of thick film PZT. The pMUTs are designed as 8...

  14. Shearing Nanometer-Thick Confined Hydrocarbon Films: Friction and Adhesion

    DEFF Research Database (Denmark)

    Sivebæk, I. M.; Persson, B. N. J.

    2016-01-01

    We present molecular dynamics (MD) friction and adhesion calculations for nanometer-thick confined hydrocarbon films with molecular lengths 20, 100 and 1400 carbon atoms. We study the dependency of the frictional shear stress on the confining pressure and sliding speed. We present results...

  15. MEMS Accelerometer with Screen Printed Piezoelectric Thick Film

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Lau-Moeller, R.; Bove, T.;

    2006-01-01

    A bulk-micromachined piezoelectric MEMS accelerometer with screen printed piezoelectric Pb(ZrxTil )O3(PZT) thick film (TF) as the sensing material has been fabricated and characterized. The accelerometer has a four beam structure with a central seismic mass (3600x3600x500 pm3) and a total chip size...

  16. Presentation and characterization of novel thick-film PZT microactuators

    Science.gov (United States)

    Chalvet, Vincent; Habineza, Didace; Rakotondrabe, Micky; Clévy, Cédric

    2016-04-01

    We propose in this paper the characterization of a new generation of piezoelectric cantilevers called thick-films piezoelectric actuators. Based on the bonding and thinning process of a bulk PZT layer onto a silicon layer, these cantilevers can provide better static and dynamic performances compared to traditional piezocantilevers, additionally to the small dimensions.

  17. Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

    KAUST Repository

    Oba, Tatsuya

    2012-06-19

    We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films. The axial position of the dye molecules across the thickness of the film was determined with a resolution of 12 nm by analyzing astigmatic fluorescence images. The average relaxation times of the rotating molecules do not depend on the overall thickness of the film between 20 and 110 nm. The relaxation times also do not show any dependence on the axial position within the films for the film thickness between 70 and 110 nm. In addition to the rotating molecules we observed a fraction of spatially diffusing molecules and completely immobile molecules. These molecules indicate the presence of thin (<5 nm) high-mobility surface layer and low-mobility layer at the interface with the substrate. (Figure presented) © 2012 American Chemical Society.

  18. Effect of Film Thickness on Properties of a-Si∶H Films

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The a-Si∶H films with different thickness smaller than 1μm were deposited by plasma enhanced chemical vapor deposition (PECVD) under the optimum deposition conditions. The effect of different thickness on film properties is analyzed.The results show that,with the increase of the film thickness,the dark conductivity, photoconductivity and threshold voltage increase, the optical gap and peak ratio of TA to TO in the Raman spectra decrease, the refractive index keeps almost constant, and the optical absorption coefficient and current ratio of on/off state first maximize and then reduce.

  19. Microwave permittivity and permeability of ferrite-polymer thick films

    International Nuclear Information System (INIS)

    Nickel-zinc ferrite-epoxy composites with different ferrite/epoxy ratios, 50/50, 60/40, 70/30 and 80/20, have been prepared as thick films of thickness 100 μm. Different compositions of nickel-zinc ferrite, Ni1-xZnxFe2O4, where x=0.2,0.4 and 0.5 have been used to prepare the composite films. The complex permittivity (ε'-jε'') and the complex permeability (μ'-jμ'') of the films as well as of the sintered ferrites have been measured at X-band (8-12 GHz) microwave frequencies using the cavity perturbation technique. The dielectric constant and the permeability of the films are found to be different from those of the sintered ferrites. ε' of films is found to increase with increase in the ferrite content of the composites as well as with frequency while the permeability, μ', is observed to decrease with increase in ferrite content as well as frequency. The high permeability losses exhibited by the films at X-band frequencies, shows their potentiality for applications like suppression of electromagnetic interference in microwave circuits. The composites with the ferrite composition x=0.5 are observed to exhibit higher losses compared to the composites with other compositions. Also the ferrite/epoxy ratio 80/20 is observed to give comparatively higher losses

  20. Accurate analysis of ellipsometric data for thick transparent films

    Institute of Scientific and Technical Information of China (English)

    Yuan Zhao; Mingyu Sheng; Yuxiang Zheng; Liangyao Chen

    2011-01-01

    @@ Using e-beam evaporation, the ellipsometric parameters of thick transparent films are studied with the modified analysis method for the SiO2 film samples deposited onto the Si substrate.The ellipsometric parameters are measured at the incidence angles changing from 50° to 70° and in the 3-4.5 eV photon energy range.The error in the conventional method can be significantly reduced by the modified ellipsometric method considering the spatial effect to show good agreement between the theoretical and experimental results.The new method presented in this letter can be applied to other optical measurement of the periodic or non-periodic film structures.%Using e-beam evaporation, the ellipsometric parameters of thick transparent films are studied with the modified analysis method for the SiO2 film samples deposited onto the Si substrate. The ellipsometric parameters are measured at the incidence angles changing from 50° to 70° and in the 3-4.5 eV photon energy range. The error in the conventional method can be significantly reduced by the modified ellipsometric method considering the spatial effect to show good agreement between the theoretical and experimental results. The new method presented in this letter can be applied to other optical measurement of the periodic or non-periodic film structures.

  1. Film-thickness dependence of structure formation in ultra-thin polymer blend films

    CERN Document Server

    Gutmann, J S; Stamm, M

    2002-01-01

    We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

  2. Effect of film thickness and texture morphology on the physical properties of lead sulfide thin films

    Science.gov (United States)

    Azadi Motlagh, Z.; Azim Araghi, M. E.

    2016-02-01

    Lead sulfide (PbS) thin films were prepared onto ultra-clean quartz substrate by the electron beam gun (EBG) evaporation method. The thicknesses of the thin films were 50, 100, 150 and 200 nm. They were annealed at 423 K for 2 h. Field emission scanning electron microscopy (FESEM) images of the thin films showed their texture morphology at the surface of the quartz substrate. X-ray diffraction (XRD) patterns of the thin films showed that they have a cubic phase and rock-salt structure after annealing. The average crystallite size for the thin films was in the range of 32-100 nm. Optical measurements confirmed that crystalline thin films have a direct band gap that increases by decreasing the film thickness. This blue shift of the band gap of thin films compared to the bulk structure can be attributed to the quantum confinement effects in the nanoparticles. A decrease in conductivity by increasing the temperature confirmed the positive temperature coefficient of resistance in the thin films that showed the dominant conduction mechanism is via a band-like transition. The density of localized states at the Fermi level increases by increasing the film thickness. Current-voltage behavior of the thin films showed an increase in both dark current and photocurrent by increasing the crystallite size which is discussed, based on the presence of trap states and barriers in nanostructures.

  3. Effect of film thickness and texture morphology on the physical properties of lead sulfide thin films

    International Nuclear Information System (INIS)

    Lead sulfide (PbS) thin films were prepared onto ultra-clean quartz substrate by the electron beam gun (EBG) evaporation method. The thicknesses of the thin films were 50, 100, 150 and 200 nm. They were annealed at 423 K for 2 h. Field emission scanning electron microscopy (FESEM) images of the thin films showed their texture morphology at the surface of the quartz substrate. X-ray diffraction (XRD) patterns of the thin films showed that they have a cubic phase and rock-salt structure after annealing. The average crystallite size for the thin films was in the range of 32–100 nm. Optical measurements confirmed that crystalline thin films have a direct band gap that increases by decreasing the film thickness. This blue shift of the band gap of thin films compared to the bulk structure can be attributed to the quantum confinement effects in the nanoparticles. A decrease in conductivity by increasing the temperature confirmed the positive temperature coefficient of resistance in the thin films that showed the dominant conduction mechanism is via a band-like transition. The density of localized states at the Fermi level increases by increasing the film thickness. Current–voltage behavior of the thin films showed an increase in both dark current and photocurrent by increasing the crystallite size which is discussed, based on the presence of trap states and barriers in nanostructures. (paper)

  4. Textured (Tl-Bi-Pb)-1223 thick films

    International Nuclear Information System (INIS)

    Screen printing was employed to fabricate thick films of the composition (Tl0.6Bi0.16Pb0.24)(Ba0.1 Sr0.9)2Ca2 Cu3 Oy on polycrystalline Y2 O3-doped ZrO2 substrates. The influence of the screen printing procedure, the heat-treatment of the films and additional compaction on the texturing of the superconducting crystallites and on the electrical properties of the superconducting films have been studied. X-ray diffraction ascertained the high phase purity of the material and allowed calculation of the degree of texturing. Scanning electron microscopy in combination with EDX and optical microscopy in normal and polarized light yielded information about the microstructure of the films. Tc(0) values of 118 K and transport critical current densities in the range of 10 kA cm-2 at 77 K were obtained for the best specimens. (author)

  5. Effects of thickness on electronic structure of titanium thin films

    Indian Academy of Sciences (India)

    Güvenç Akgül

    2014-02-01

    Effects of thickness on the electronic structure of e-beam evaporated thin titanium films were studied using near-edge X-ray absorption fine structure (NEXAFS) technique at titanium 2,3 edge in total electron yield (TEY) mode and transmission yield mode. Thickness dependence of 2,3 branching ratio (BR) of titanium was investigated and it was found that BR below 3.5 nm shows a strong dependence on film thickness. Mean electron escape depth () in titanium, an important parameter for surface applications, was determined to be = 2.6 ± 0.1 nm using 2,3 resonance intensity variation as a function of film thickness. The average 3/2 white line intensity ratio of titanium was obtained as 0.89 from the ratio of amplitudes of each 3 and 2 peaks and 0.66 from the integrated area under each 3 and 2 peaks. In addition, a theoretical calculation for pure titanium was presented for comparison with experimental data.

  6. Ultrasonic array of thick film transducers for biological tissue characterization.

    Science.gov (United States)

    Gwirc, Sergio N; Negreira, Carlos A; Marino, Nestor R

    2010-01-01

    The initial motivation for this work was to accomplish an easy way to manufacture different geometries of ultrasonic transducers and arrays using a PZT powder, combined with a standard process to have repetitive series of them. The piezoelectric thick film was obtained using a PZT paste and applying it by screen printing on an alumina substrate. Then, the film was drying and sintered with a temperature-time profile determined by the paste characteristics. Each transducer is composed by three layers, one by PZT and two acting as electrodes. The active element of the paste is a PZT powder which is dispersed in a commercial vehicle to obtain rheological properties suitable for use the screen printing process. The connection between PZT particles is improved by adding a lead borosilicate frit glass that also helps to attach the film to the substrate due to the relatively low temperature of sintered that has been used in this process. The PZT film has low density that is generated by internal porosity, so its acoustic impedance is lower than for a bulk ceramic transducer and so is well adapted to testing human tissues. At the same time the thick film technology is well suited to make medium size transducers and also arrays performed with tiny ultrasonic transducers. PMID:21097177

  7. Thickness measurement of Ni thin film using dispersion characteristics of a surface acoustic wave

    International Nuclear Information System (INIS)

    In this study, we suggest a method to measure the thickness of thin films nondestructively using the dispersion characteristics of a surface acoustic wave propagating along the thin film surface. To measure the thickness of thin films, we deposited thin films with different thicknesses on a Si (100) wafer substrate by controlling the deposit time using the E-beam evaporation method. The thickness of the thin films was measured using a scanning electron microscope. Subsequently, the surface wave velocity of the thin films with different thicknesses was measured using the V(z) curve method of scanning acoustic microscopy. The correlation between the measured thickness and surface acoustic wave velocity was verified. The wave velocity of the film decreased as the film thickness increased. Therefore, thin film thickness can be determined by measuring the dispersion characteristics of the surface acoustic wave velocity.

  8. Multilayer circuits with thick-film polymer insulation

    Directory of Open Access Journals (Sweden)

    Spirin V. G.

    2012-10-01

    Full Text Available Three design and technological versions of multilayer circuit have been developed. The interlayer and protective isolation in these circuits was performed with thick (10—30 micron heat-resistant photosensitive organic dielectric film. Such performance allows to attach component leads to the contact pads on the interlayer isolation with the use of ultrasonic welding and soldering. Number of interlayer connections of conductors in such circuits is minimized. The complexity and cost of manufacturing of the circuits can be reduced by 2—3 times compared to known thin-film prototypes.

  9. Chemical vapor deposition reactor. [providing uniform film thickness

    Science.gov (United States)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  10. Thickness Dependence Magnetization in Laser Ablated Ni-Cu-Zn Ferrite Nanostructured Thin Films.

    Science.gov (United States)

    Raghavender, A T; Hong, Nguyen Hoa; Lee, Kyu Joon; Jung, Myung-Hwa

    2016-01-01

    Ni₀.₅Cu₀.₃Zn₀.₂Fe₂O₄ thin films with thickness ranging from 25 nm to 500 nm were grown on Si substrate using pulsed laser deposition technique and their structural and magnetic properties were investigated. From the atomic force microscopy (AFM) analysis, it is observed that the film roughness (Ra) depends strongly on the thickness of the fabricated film. The magnetizations of the thin films were found to decrease when the film thickness increases. The thinner films showed a larger magnetization than the thick films. All the films showed a blocking temperature indicating their superparamagnetic behavior. PMID:27398528

  11. Effect of film thickness on microstructure parameters and optical constants of CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.co [Physics Department, Faculty of Science, Qassim University, Buridah 51452 (Saudi Arabia); Physics Department, Faculty of Science, Al-Azhar University, Assiut, P.O. 71452 (Egypt); Afify, N. [Physics Department, Assiut University, Assiut (Egypt); El-Taher, A. [Physics Department, Faculty of Science, Qassim University, Buridah 51452 (Saudi Arabia); Physics Department, Faculty of Science, Al-Azhar University, Assiut, P.O. 71452 (Egypt)

    2009-08-12

    Different thickness of cadmium telluride (CdTe) thin films was deposited onto glass substrates by the thermal evaporation technique. Their structural characteristics were studied by X-ray diffraction (XRD). The XRD experiments showed that the films are polycrystalline and have a zinc-blende (cubic) structure. The microstructure parameters, crystallite size and microstrain were calculated. It is observed that the crystallite size increases and microstrain decreases with the increase in the film thickness. The fundamental optical parameters like band gap and extinction coefficient are calculated in the strong absorption region of transmittance and reflectance spectrum. The possible optical transition in these films is found to be allowed direct transition with energy gap increase from 1.481 to 1.533 eV with the increase in the film thickness. It was found that the optical band gap increases with the increase in thickness. The refractive indices have been evaluated in transparent region in terms of envelope method, which has been suggested by Swanepoul in the transparent region. The refractive index can be extrapolated by Cauchy dispersion relationship over the whole spectral range, which extended from 400 to 2500 nm. It is observed that the refractive index, n increases on increasing the film thickness up to 671 nm and then the variation of n with higher thickness lie within the experimental errors.

  12. A sensitive magnetic field sensor using BPSCCO thick film

    Indian Academy of Sciences (India)

    S Vijay Srinivas; Abhijit Ray; T K Dey

    2001-08-01

    A highly sensitive magnetic sensor operating at liquid nitrogen temperature and based on BPSCCO screen-printed thick film, is reported. The sensor resistance for an applied magnetic field of 100 × 10–4T(100 gauss) exhibits an increase by 360% of its value in zero field at 77.4 K. The performance of the sensor in presence of magnetic field, the hysteretic features and the effect of thermal cycling, has been discussed.

  13. The Effect of Thickness of Aluminium Films on Optical Reflectance

    Directory of Open Access Journals (Sweden)

    Robert Lugolole

    2015-01-01

    Full Text Available In Uganda and Africa at large, up to 90% of the total energy used for food preparation and water pasteurization is from fossil fuels particularly firewood and kerosene which pollute the environment, yet there is abundant solar energy throughout the year, which could also be used. Uganda is abundantly rich in clay minerals such as ball clay, kaolin, feldspar, and quartz from which ceramic substrates were developed. Aluminium films of different thicknesses were deposited on different substrates in the diffusion pump microprocessor vacuum coater (Edwards AUTO 306. The optical reflectance of the aluminium films was obtained using a spectrophotometer (SolidSpec-3700/DUV-UV-VIS-NIR at various wave lengths. The analysis of the results of the study revealed that the optical reflectance of the aluminium films was above 50% and increased with increasing film thickness and wavelength. Thus, this method can be used to produce reflector systems in the technology of solar cooking and other appliances which use solar energy.

  14. Tape casting and partial melting of Bi-2212 thick films

    International Nuclear Information System (INIS)

    To produce Bi-2212 thick films with high critical current densities tape casting and partial melting is a promising fabrication method. Bi-2212 powder and organic additives were mixed into a slurry and tape casted onto glass by the doctor blade tape casting process. The films were cut from the green tape and partially molten on Ag foils during heat treatment. We obtained almost single-phase and well-textured films over the whole thickness of 20 μm. The orientation of the (a,b)-plane of the grains were parallel to the substrate with a misalignment of less than 6 degrees. At 77K/OT a critical current density of 15'000 A/cm2 was reached in films of the dimension 1cm x 2cm x 20μm (1μV/cm criterion, resistively measured). At 4K/OT the highest value was 350'000 A/cm2 (1nV/cm criterion, magnetically measured)

  15. Tape casting and partial melting of Bi-2212 thick films

    Energy Technology Data Exchange (ETDEWEB)

    Buhl, D.; Lang, T.; Heeb, B. [Nichtmetallische Werkstoffe, Zuerich (Switzerland)] [and others

    1994-12-31

    To produce Bi-2212 thick films with high critical current densities tape casting and partial melting is a promising fabrication method. Bi-2212 powder and organic additives were mixed into a slurry and tape casted onto glass by the doctor blade tape casting process. The films were cut from the green tape and partially molten on Ag foils during heat treatment. We obtained almost single-phase and well-textured films over the whole thickness of 20 {mu}m. The orientation of the (a,b)-plane of the grains were parallel to the substrate with a misalignment of less than 6{degrees}. At 77K/OT a critical current density of 15`000 A/cm{sup 2} was reached in films of the dimension 1cm x 2cm x 20{mu}m (1{mu}V/cm criterion, resistively measured). At 4K/OT the highest value was 350`000 A/cm{sup 2} (1nV/cm criterion, magnetically measured).

  16. CdTe thin film solar cells with reduced CdS film thickness

    International Nuclear Information System (INIS)

    A study was performed to reduce the CdS film thickness in CdTe thin film solar cells to minimize losses in quantum efficiency. Using close space sublimation deposition for CdS and CdTe a maximum efficiency of ∼ 9.5% was obtained with the standard CdS film thickness of ∼ 160 nm. Reduction of the film CdS thickness to less than 100 nm leads to poor cell performance with ∼ 5% efficiency, mainly due to a lower open circuit voltage. An alternative approach has been tested to reduce the CdS film thickness (∼ 80 nm) by depositing a CdS double layer. The first CdS layer was deposited at high substrate temperature in the range of 520-540 deg. C and the second CdS layer was deposited at low substrate temperature of ∼ 250 deg. C. The cell prepared using a CdS double layer show better performance with cell efficiency over 10%. Quantum efficiency measurement confirmed that the improvement in the device performance is due to the reduction in CdS film thickness. The effect of double layer structure on cell performance is also observed with chemical bath deposited CdS using fluorine doped SnO2 as substrate.

  17. Fatigue crack closure in submicron-thick freestanding copper films

    Energy Technology Data Exchange (ETDEWEB)

    Kondo, Toshiyuki, E-mail: kondo@mech.eng.osaka-u.ac.jp; Ishii, Takaki; Hirakata, Hiroyuki; Minoshima, Kohji

    2015-09-03

    The fatigue crack closure in approximately 500-nm-thick freestanding copper films were investigated by in situ field emission scanning electron microscope (FESEM) observations of the fatigue crack opening/closing behavior at three stress ratios of R=0.1, 0.5, and 0.8 in the low–K{sub max} (maximum stress intensity factor) region of K{sub max}<4.5 MPam{sup 1/2}. The direct observation of fatigue cracks clarified that crack closure occurred at R=0.1 and 0.5, while the fatigue crack was always open at R=0.8. Changes in the gage distance across the fatigue crack during a fatigue cycle were measured from the FESEM images, and the crack opening stress intensity factor K{sub op} was evaluated on the basis of the stress intensity factor K vs. the gage distance relationship. The effective stress intensity factor range ΔK{sub eff}=K{sub max}−K{sub op} was then evaluated. The R-dependence of the da/dN vs. ΔK{sub eff} relationship was smaller than that of the da/dN vs. ΔK relationship. This suggests that ΔK{sub eff} is a dominating parameter rather than ΔK in the fatigue crack propagation in the films. This paper is the first report on the presence of the fatigue crack closure in submicron-thick freestanding metallic films.

  18. Fatigue crack closure in submicron-thick freestanding copper films

    International Nuclear Information System (INIS)

    The fatigue crack closure in approximately 500-nm-thick freestanding copper films were investigated by in situ field emission scanning electron microscope (FESEM) observations of the fatigue crack opening/closing behavior at three stress ratios of R=0.1, 0.5, and 0.8 in the low–Kmax (maximum stress intensity factor) region of Kmax<4.5 MPam1/2. The direct observation of fatigue cracks clarified that crack closure occurred at R=0.1 and 0.5, while the fatigue crack was always open at R=0.8. Changes in the gage distance across the fatigue crack during a fatigue cycle were measured from the FESEM images, and the crack opening stress intensity factor Kop was evaluated on the basis of the stress intensity factor K vs. the gage distance relationship. The effective stress intensity factor range ΔKeff=Kmax−Kop was then evaluated. The R-dependence of the da/dN vs. ΔKeff relationship was smaller than that of the da/dN vs. ΔK relationship. This suggests that ΔKeff is a dominating parameter rather than ΔK in the fatigue crack propagation in the films. This paper is the first report on the presence of the fatigue crack closure in submicron-thick freestanding metallic films

  19. Auto-calibration of ultrasonic lubricant-film thickness measurements

    International Nuclear Information System (INIS)

    The measurement of oil film thickness in a lubricated component is essential information for performance monitoring and design. It is well established that such measurements can be made ultrasonically if the lubricant film is modelled as a collection of small springs. The ultrasonic method requires that component faces are separated and a reference reflection recorded in order to obtain a reflection coefficient value from which film thickness is calculated. The novel and practically useful approach put forward in this paper and validated experimentally allows reflection coefficient measurement without the requirement for a reference. This involves simultaneously measuring the amplitude and phase of an ultrasonic pulse reflected from a layer. Provided that the acoustic properties of the substrate are known, the theoretical relationship between the two can be fitted to the data in order to yield reflection coefficient amplitude and phase for an infinitely thick layer. This is equivalent to measuring a reference signal directly, but importantly does not require the materials to be separated. The further valuable aspect of this approach, which is demonstrated experimentally, is its ability to be used as a self-calibrating routine, inherently compensating for temperature effects. This is due to the relationship between the amplitude and phase being unaffected by changes in temperature which cause unwanted changes to the incident pulse. Finally, error analysis is performed showing how the accuracy of the results can be optimized. A finding of particular significance is the strong dependence of the accuracy of the technique on the amplitude of reflection coefficient input data used. This places some limitations on the applicability of the technique

  20. Thickness Dependence of Magnetic Properties in DyFeCo Films

    Institute of Scientific and Technical Information of China (English)

    Xiong Rui; Liu Hai-lin; Mei Xue-fei; Li Zuo-yi; Yang Xiao-fei; Shi Jing

    2004-01-01

    Films of amorphous DyFeCo were deposited on glass substrates using RF sputtering deposition system. The thickness dependence of the coercivity of DyFeCo films prepared under the same sputtering conditions was investigated. It is found that the composition is nearly thickness independent, while the coercivity is shown to increase with the film thickness increasing at the beginning, then above a certain thickness decrease with the thickness increasing. The thickness dependence of the coercivity is believed to be due to microstructure-induced variations in the short-range order during the film growth.

  1. Thick Film Temperature Compensating Circuit for Semiconductor Strain Gauges

    OpenAIRE

    Mitsuo Ai; Hiromi Tosaki; Akira Ikegami; Hideo Arima; Yoshitaka Matsuoka; Tsutomu Okayama

    1981-01-01

    Thick film circuits were developed for temperature compensating of semiconductor strain gauges and for connecting the gauges to amplifiers in electronic pressure and differential pressure transmitters. In each circuit, ten Au pads for Al wire bonding and thirteen Ag/Pd pads for soldering must be fabricated on a small substrate. The results of the research are shown below.(1) The resistance values and the thermistor constants required for the thermistors are 0.9 ± 0.09 kilo-ohm and 2500 ± 40 K...

  2. Thick film magnetic nanoparticulate composites and method of manufacture thereof

    Science.gov (United States)

    Ma, Xinqing (Inventor); Zhang, Yide (Inventor); Ge, Shihui (Inventor); Zhang, Zongtao (Inventor); Yan, Dajing (Inventor); Xiao, Danny T. (Inventor)

    2009-01-01

    Thick film magnetic/insulating nanocomposite materials, with significantly reduced core loss, and their manufacture are described. The insulator coated magnetic nanocomposite comprises one or more magnetic components, and an insulating component. The magnetic component comprises nanometer scale particles (about 1 to about 100 nanometers) coated by a thin-layered insulating phase. While the intergrain interaction between the immediate neighboring magnetic nanoparticles separated by the insulating phase provides the desired soft magnetic properties, the insulating material provides high resistivity, which reduces eddy current loss.

  3. Optical properties and structures of silver thin films deposited by magnetron sputtering with different thicknesses

    Institute of Scientific and Technical Information of China (English)

    Xilian Sun; Ruijin Hong; Haihong Hou; Zhengxiu Fan; Jianda Shao

    2006-01-01

    A series of thin Ag films with different thicknesses grown under identical conditions are analyzed by means of spectrophotometer. From these measurements the values of refractive index and extinction coefficient are calculated. The films are deposited onto BK7 glass substrates by direct current (DC) magnetron sputtering. It is found that the optical properties of the Ag films can be affected by films thickness.Below critical thickness of 17 nm, which is the thickness at which Ag films form continuous films, the optical properties and constants vary significantly with thickness increasing and then tend to a stable value up to about 40 nm. At the same time, X-ray diffraction measurement is carried out to examine the microstructure evolution of Ag films as a function of films thickness. The relation between optical properties and microstructure is discussed.

  4. Amorphous film thickness dependence for epitaxy of perovskite oxide films under excimer laser irradiation

    International Nuclear Information System (INIS)

    We have studied the epitaxial growth of perovskite manganite LaMnO3 (LMO) on SrTiO3(1 0 0) in the excimer laser assisted metal organic deposition process. The LMO was preferentially grown from the substrate surface by the KrF laser irradiation. The study of amorphous LMO film thickness dependence on epitaxial growth under the excimer laser irradiation revealed that the photo-thermal heating effect strongly depended on the amorphous film thickness due to a low thermal conductivity of amorphous LMO: the ion-migration for chemical bond-forming at the reaction interface would be strongly enhanced in the amorphous LMO film with the large film thickness about 210 nm. On the other hand, the photo-chemical effect occurred efficiently for the amorphous film thickness in the range of 35-210 nm. These results indicate that the epitaxial growing rate was dominated by the photo-thermal heating after the photo-chemical activation at the growth interface.

  5. Thickness optimization of Mo films for Cu(InGa)Se2 solar cell applications

    Institute of Scientific and Technical Information of China (English)

    Li Wei; Zhao Yan-Min; Liu Xing-Jiang; Ao Jian-Ping; Sun Yun

    2011-01-01

    Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se2 solar cell can reach a conversion efficiency of 13.15%.

  6. Nitrogen dioxide sensing properties of sprayed tungsten oxide thin film sensor: Effect of film thickness.

    Science.gov (United States)

    Ganbavle, V V; Mohite, S V; Agawane, G L; Kim, J H; Rajpure, K Y

    2015-08-01

    We report a study on effect of film thickness on NO2 sensing properties of sprayed WO3 thin films. WO3 thin films varying in thicknesses are deposited onto the glass substrates by simple spray pyrolysis technique by varying the volume of spray solution.Thin film gas sensors are characterized by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and photoluminescence (PL) techniques to study their physical properties. Film having thickness 745nm has shown highest gas response of 97% with 12 and 412s response and recovery times, respectively towards 100ppm NO2 concentration. Gas response of 20% is observed towards 10ppm NO2 at 200°C operating temperature. Sensitivity of the optimal sensor is 0.83%/ppm when operating at 200°C with 10ppm lower detection limit. The response of the sensor is reproducible and WO3 films are highly selective towards NO2 in presence of mist of various interfering gases viz. H2S, NH3, LPG, CO and SO2. PMID:25898119

  7. Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

    Science.gov (United States)

    Jiwei, Zhai; Cheung, M. H.; Xu, Zheng Kui; Li, Xin; Chen, Haydn; Colla, Eugene V.; Wu, T. B.

    2002-11-01

    Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O3 thin films were deposited via a sol-gel process on LaNiO3-coated silicon substrates. Films showed a strong (001) preferred orientation upon annealing at 500-700 degC for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35 muC/cm2, which is equal to that observed in bulk samples.

  8. Effect of film thickness on electrochromic activity of spray deposited iridium oxide thin films

    International Nuclear Information System (INIS)

    Electrochromic iridium oxide thin films were deposited onto fluorine doped tin oxide (FTO) coated glass substrates from an aqueous iridium chloride solution using a spray pyrolysis process. The deposition temperature was 250 deg. C. The solution quantity was varied from 25 to 55 ml to obtain films with different thickness. The as-deposited samples were X-ray amorphous. The electrochromic properties were studied in proton containing electrolyte (0.5N, H2SO4) using cyclic voltammetry, chronoamperometry and spectrophotometry techniques. The films exhibit anodic electrochromism. The colouration efficiency at 630 nm was maximum for thicker sample, owing to its large charge storage capacity and hydration

  9. Effect of film thickness on electrochromic activity of spray deposited iridium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Patil, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India)]. E-mail: psp_phy@unishivaji.ac.in; Mujawar, S.H. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India); Sadale, S.B. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India); Deshmukh, H.P. [Department of Physics, Bharati Vidyapeeth, Deemed University, Y.M. College, Pune (India); Inamdar, A.I. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India)

    2006-10-10

    Electrochromic iridium oxide thin films were deposited onto fluorine doped tin oxide (FTO) coated glass substrates from an aqueous iridium chloride solution using a spray pyrolysis process. The deposition temperature was 250 deg. C. The solution quantity was varied from 25 to 55 ml to obtain films with different thickness. The as-deposited samples were X-ray amorphous. The electrochromic properties were studied in proton containing electrolyte (0.5N, H{sub 2}SO{sub 4}) using cyclic voltammetry, chronoamperometry and spectrophotometry techniques. The films exhibit anodic electrochromism. The colouration efficiency at 630 nm was maximum for thicker sample, owing to its large charge storage capacity and hydration.

  10. Ultrasonic measurement of lubricant film thickness in sliding bearings with thin liners

    International Nuclear Information System (INIS)

    When conducting ultrasonic measurements of the lubricant film thickness in sliding bearings with thin liners, the ultrasonic pulse reflected from the bearing liner–lubricant film interface will superimpose on the pulse reflected from the bearing substrate–liner interface. The thickness information of the lubricant film is contained in the reflected pulse from the liner–lubricant film interface. In this case, the film thickness could not be obtained directly from the superimposed reflected signals. The thin liner indicates that the thickness of the bearing liner is less than half the ultrasonic pulse width. Based on the spectrum analysis method of superimposed signals, a new method is proposed to measure the lubricant film thickness in sliding bearings with thin liners. The frequency-domain amplitude ratio between the echo component containing thickness information and the steady echo component from the bearing substrate–liner interface is extracted from the superimposed signal. The reflection coefficient of the liner–lubricant film interface is obtained by this amplitude ratio to determine the film thickness. The lubricant films of different thicknesses in a thin-liner thrust pad were measured in a high-precision experimental apparatus. The measurement results were compared with the known film thickness set by the experimental apparatus. In the thinner film region, the measurement results agreed well with the set film thickness. In the thicker film region, the mean values of the multiple measurement results represented the film thickness. The experimental results show that the method can be used to measure the lubricant film thickness in sliding bearings with thin liners. (paper)

  11. Preparation and characterization of thick BSCCO 2223 films

    International Nuclear Information System (INIS)

    Among the most widespread applications for critical high-temperature ceramic superconductors are for silver veined tapes, with the superconductor in the middle. These tapes are prepared by the powder- in - tube method. To attain high densities of critical current, the ceramic material must have a certain texture, with the grains oriented with the c axis perpendicular to the direction in which the current circulates. In the system that was studied, the degree of orientation increases as the distance to the vein decreases, with the maximum being in the silver-ceramic inter-phase. Superconductor tapes become inconvenient when defining the ceramic, especially because of the orientation of their plates as a function of the distance to the silver. Although the silver can be dissolved by a chemical attack in order to uncover the ceramic, greater precaution is needed while manipulating the superconductor and obtaining representative data. The behavior of thick films of the compound BSCCO 2223, deposited on silver sheets, forming silver-ceramic composites, was studied. These sheets simulate the silver-ceramic inter-phase and the distribution of the grains towards the center in a thick tape. After the samples were prepared, the phases that were present were characterized by x-ray diffraction and the resulting microstructure was analyzed with a SEM (Scanning Electron Microscope). Its mechanical properties were evaluated, following the formation and propagation of cracks in real time using four point flexion microassays inside the SEM chamber, as well as generating tension-deformation curves. The method of preparation of the thick films is discussed and its influence on the results obtained with the different characterizations (cw)

  12. Ethanol vapour sensing properties of screen printed WO3 thick films

    Indian Academy of Sciences (India)

    R S Khadayate; R B Waghulde; M G Wankhede; J V Sali; P P Patil

    2007-04-01

    This paper presents ethanol vapour sensing properties of WO3 thick films. In this work, the WO3 thick films were prepared by standard screen-printing method. These films were characterized by X-ray diffraction (XRD) measurements and scanning electron microscopy (SEM). The ethanol vapour sensing properties of these thick films were investigated at different operating temperatures and ethanol vapour concentrations. The WO3 thick films exhibit excellent ethanol vapour sensing properties with a maximum sensitivity of ∼1424.6% at 400°C in air atmosphere with fast response and recovery time.

  13. Thickness Dependence of Fluorescence Dynamics in Thin and Ultrathin Polystyrene Films

    Science.gov (United States)

    Tateishi, Yohei; Okada, Yohei; Tanaka, Keiji; Nagamura, Toshihiko

    2008-03-01

    Fluorescence dynamics such as lifetime and rotational relaxation time for 6-(N-(7-nitrobenz-2-oxa-1,3- diazol-4-yl)amino) hexanoic acid (NBD) in polystyrene (PS) solid was examined as a function of film thickness, t. Both times decreased with decreasing thickness once the film became thinner than a critical value, to. Interestingly, in the case of ultrathin films, both times were insensitive to the film thickness. In addition, fluorescence intensity per unit thickness also decreased with decreasing thickness at t model composed of surface, bulk and interfacial layers.

  14. Nanometer-thick copper films grown by thermal atomic layer deposition

    International Nuclear Information System (INIS)

    Because of the superior properties of copper, it has been of great interest as a conducting material to replace aluminum in device manufacturing. In this study, we investigated the influence of substrate temperature, film thickness, and rapid thermal annealing (RTA) on the deposition of Cu films of thickness less than 10 nm. Compared to thicker films, the electrical properties of nanometer-thick films were found to be very sensitive to the deposition temperature. Further, we determined the optimal deposition temperature to obtain low-resistivity nanometer-thick Cu films. The Cu films were deposited with island-type growth, and the interconnection between grains plays a major role in the resistivity of the films. We also determined the critical thickness at which Cu films exhibit continuous growth as 8 nm. After RTA, the film color darkened, electron scattering became weak, and the resistivity reduced more than 20% with annealing at 300–350 °C, because of the growth of Cu grains. The results of this study indicate that thermal ALD can be used in conjunction with RTA to produce low-resistivity Cu thin films, the thickness, uniformity, and conformality of which can be easily controlled. - Highlights: • Resistance of nanometer-thick Cu film was sensitive to deposition temperature. • Optimal temperature deposition was determined to obtain low-resistivity. • Critical thickness at which Cu films exhibit continuous growth was determined. • Resistivity reduced with annealing at 300–350 °C

  15. THICKNESS DEPENDENCE OF MAGNETIZATION AND MAGNETOSTRICTION OF NiFe AND NiFeRh FILMS

    OpenAIRE

    Ounadjela, K.; Lefakis, H.; Speriosu, V.; Hwang, C.; Alexopoulos, P.

    1988-01-01

    The saturation magnetization, 4πMs, and the magnetostriction constant, λ, of Ni81Fe19, Ni81Fe19/Ta and Ni72Fe17Rh11/ Ta thinfilms were studied as a function of film thickness before and after annealing. For films of thickness t < 200 Å, 4πMs, and λs were found to be strongly dependent on film thickness with even larger variation after annealing. Auger depth profiles have shown the existence of inhomogeneous interfacial layer at the film surface, Ta/film and film/substrate interfaces. The pres...

  16. Influence of film thickness on topology and related magnetic interactions in Fe nanoparticle films

    Energy Technology Data Exchange (ETDEWEB)

    Ausanio, G.; Iannotti, V., E-mail: iannotti@na.infn.it; Amoruso, S.; Bruzzese, R. [University of Naples ' Federico II' , Department of Physics (Italy); Wang, X.; Aruta, C. [Complesso Universitario di Monte S. Angelo, CNR-SPIN (Italy); Arzeo, M. [Chalmers University of Technology, Department of Microtechnology and Nanoscience (Sweden); Lanotte, L. [University of Naples ' Federico II' , Department of Physics (Italy)

    2013-08-15

    Fe nanoparticle (NP)-assembled thin films with different thickness were prepared by femtosecond-pulsed laser deposition using different deposition times. The proper selection of the deposition time allows to control, to a certain degree, the morphology and topology of the deposited Fe nanoparticles (NPs) assembly, fostering non-uniform dense assemblies of NPs, with the consequent reduction of the influence of the exchange interactions on the macroscopic magnetic properties with decreasing thickness. The magnetic behavior of the Fe NP-assembled films with decreasing thickness is characterized by higher coercive field (H{sub c}) values (a factor Almost-Equal-To 4.5) and a good compromise between the hysteresis loops squareness and moderate exchange interactions, strongly correlated with the NPs topology.

  17. A Study on the Thickness Measurement of Thin Film by Ultrasonic Wave

    International Nuclear Information System (INIS)

    Recently, it is gradually raised necessity that thickness of thin film is measured accurately and managed in industrial circles and medical world. In this study, regarding to the thickness of film which is in opaque object and is beyond distance resolution capacity, thickness measurement was done by MEM-cepstrum analysis of received ultrasonic wave. In measurement results, film thickness which is beyond distance resolution capacity was measured accurately. And within thickness range that don't exist interference, thickness measurement by MEM-ceptrum analysis was impossible

  18. Relation between molecule ionization energy, film thickness and morphology of two indandione derivatives thin films

    Science.gov (United States)

    Grzibovskis, Raitis; Vembris, Aivars; Pudzs, Kaspars

    2016-08-01

    Nowadays most organic devices consist of thin (below 100 nm) layers. Information about the morphology and energy levels of thin films at such thickness is essential for the high efficiency devices. In this work we have investigated thin films of 2-(4-[N,N-dimethylamino]-benzylidene)-indene-1,3-dione (DMABI) and 2-(4-(bis(2-(trityloxy)ethyl)amino)benzylidene)-2H-indene-1,3-dione (DMABI-6Ph). DMABI-6Ph is the same DMABI molecule with attached bulky groups which assist formation of amorphous films from solutions. Polycrystalline structure was obtained for the DMABI thin films prepared by thermal evaporation in vacuum and amorphous structure for the DMABI-6Ph films prepared by spin-coating method. Images taken by SEM showed separate crystals or islands at the thickness of the samples below 100 nm. The ionization energy of the studied compounds was determined using photoemission yield spectroscopy. A vacuum level shift of 0.40 eV was observed when ITO electrode was covered with the thin film of the organic compound. Despite of the same active part of the investigated molecules the ITO/DMABI interface is blocking electrons while ITO/DMABI-6Ph interface is blocking holes.

  19. Structure and properties of nanocrystalline ZrNxOy thin films: Effect of the oxygen content and film thickness

    International Nuclear Information System (INIS)

    The main objective of this study was to investigate the structure and properties of ZrNxOy thin films associated with oxygen content and film thickness. ZrNxOy thin films were deposited using hollow cathode discharge ion plating on Si (100) substrate. The thickness of ZrNxOy films increased with increasing oxygen flow rate, ranging from 143 to 894 nm. Phase separation from ZrNxOy to ZrN and monoclinic ZrO2 (m-ZrO2) was observed by x-ray diffraction (XRD). The electrical and mechanical properties were influenced by the film thickness and the amount of separated phase, m-ZrO2. ZrNxOy thin films with smaller thickness or deposited at higher O2 flow rate were found to have higher electrical resistivity. Hardness of the ZrNxOy thin films increased with increasing thickness, which could be related to microstructure change of the thin films. Residual stress of the ZrN phase in the ZrNxOy thin films, measured using the modified sin2 ψ XRD method, decreased with increasing oxygen flow rate. The thickness dependence of the residual stress in ZrN was different with different oxygen flow rates. The average residual stress of the ZrNxOy thin films also decreased with increasing oxygen flow rate and the stress did not showed significant dependence on the film thickness.

  20. Critical film thickness for fracture in thin-film electrodes on substrates in the presence of interfacial sliding

    International Nuclear Information System (INIS)

    It is well known that thin-film electrodes on substrates could fracture during lithium insertion/extraction above a critical film thickness. Recent studies have revealed that lithium could facilitate sliding at the interface between lithiated Si and the underlying substrate. In this paper, we investigate fracture in thin-film electrodes and derive the critical film thickness for fracture as a function of both the fracture toughness of the film and the sliding resistance of the interface. The analysis indicates that a slippery interface due to lithiation could significantly decrease the critical thickness for fracture. (paper)

  1. Overlay mark optimization for thick-film resist overlay metrology

    Institute of Scientific and Technical Information of China (English)

    Zhu Liang; Li Jie; Zhou Congshu; Gu Yili; Yang Huayue

    2009-01-01

    For thick resist implant layers, such as a high voltage P well and a deep N well, systematic and uncorrectable overlay residues brought about by the tapered resist profiles were found. It was found that the tapered profile is closely related to the pattern density. Potential solutions of the manufacturing problem include hardening the film solidness or balancing the exposure density. In this paper, instead of focusing on the process change methodology,we intend to solve the issue of the overlay metrology error from the perspective of the overlay mark design. Based on the comparison of the overlay performances between the proposed overlay mark and the original design, it is shown that the optimized overlay mark target achieves better performance in terms of profiles, dynamic precision,tool induced shift (TIS), and residues. Furthermore, five types of overlay marks with dummy bars are studied, and a recommendation for the overlay marks is given.

  2. Development of metal oxide impregnated stilbite thick film ethanol sensor

    Science.gov (United States)

    Mahabole, M. P.; Lakhane, M. A.; Choudhari, A. L.; Khairnar, R. S.

    2016-05-01

    This paper presents the study of the sensing efficiency of Titanium oxide/ Stilbite and Copper oxide /Stilbite composites towards detection of hazardous pollutants like ethanol. Stilbite based composites are prepared by physically mixing zeolite with metal oxides namely TiO2 and CuO with weight ratios of 25:75, 50:50 and 75:25. The resulting sensor materials are characterized by X-ray diffraction and Fourier Transform Infrared Spectroscopy techniques. Composite sensors are fabricated in the form of thick film by using screen printing technique. The effect of metal oxide concentration on various ethanol sensing parameters such as operating temperature, maximum uptake capacity and response/recovery time are investigated. The results indicate that metal oxide impregnated stilbite composites have great potential as low temperature ethanol sensor.

  3. Low Temperature Firing of Pb-Contained Thick Film Dielectrics

    OpenAIRE

    Gung-Fun Chen; Shen-Li Fu

    1987-01-01

    The preparation and properties of the Pb(Fe2/3W1/3)x(Fe1/2Nb1/2)0.86–xTi0.14O3-based thick film dielectrics are described. The Calcined Pb(Fe2/3W1/3)O3 powder, instead of glass frit, is used as the flux agent to promote densification during the firing process. Firing is conducted at temperatures below 1000℃. The dissolution of Pb(Fe2/3W1/3)O3 into the starting material and the segregation of Pb(Fe2/3W1/3)O3 along the grain boundaries result in two peaks in the dielectric constant vs temperatu...

  4. A 10-GHz film-thickness-mode cavity optomechanical resonator

    Science.gov (United States)

    Han, Xu; Fong, King Y.; Tang, Hong X.

    2015-04-01

    We report on the advance of chip-scale cavity optomechanical resonators to beyond 10 GHz by exploiting the fundamental acoustic thickness mode of an aluminum nitride micro-disk. By engineering the mechanical anchor to minimize the acoustic loss, a quality factor of 1830 and hence a frequency-quality factor product of 1.9 × 1013 Hz are achieved in ambient air at room temperature. Actuated by strong piezo-electric force, the micro-disk resonator shows an excellent electro-optomechanical transduction efficiency. Our detailed analysis of the electro-optomechanical coupling allows identification and full quantification of various acoustic modes spanning from super-high to X-band microwave frequencies measured in the thin film resonator.

  5. Preparation of Lead-free Thick-film Resistor Pastes

    Institute of Scientific and Technical Information of China (English)

    LUO Hui; LI Shihong; LIU Jisong; CHEN Liqiao; YING Xingang; WANG Ke

    2012-01-01

    The preparation of lead-free thick-film resistors are reported:using RuO2 and ruthenates as conductive particles,glass powders composed of B2O3,SiO2,CaO and Al2O3 as insulating phase,adding organic matter which mainly consists of ethyl cellulose and terpineol to form printable pastes.Resistors were fabricated and sintered by conventional screen-printing on 96%Al2O3 substrates,and then sintering in a belt furnace.X-ray diffraction (XRD) and electron scanning microscopy (SEM) have been used to characterize the conductive particles.The resistors exhibit good retiring stability and low temperature coefficient of resistance.Sheet resistance spans from about 80 Ω/□ to 600 Ω/□.The resistors prepared are qualified for common use.

  6. Critical phenomena in thick films of a binary liquid mixture

    Energy Technology Data Exchange (ETDEWEB)

    Jacobs, D.T.

    1976-01-01

    The first experimental data on the behavior of a critical system as it approaches two dimensionality are presented. Measurements of the bulk coexistence curve by use of refractive index techniques were done on the binary fluid mixture methanol--cyclohexane. These measurements gave the critical exponent ..beta.. = 0.326 +- 0.003, which agrees with recent Ising-model calculations. This same binary fluid mixture was then constrained between two highly reflective, optically flat pieces of fused silica in an interferometer. The critical temperature and coexistence curve were determined as the spacing between the flats was varied from 1 ..mu..m to 60 ..mu..m. The critical temperature was directly measured for spacings between 3 and 60 ..mu..m. It was found that, if the walls were close enough together (less than or equal to 6 ..mu..m), then the drops that form on phase separation would span the intervening space. The coexistence curves of these thick films (less than or equal to 6 ..mu..m) were determined from measurements of the difference in refractive index between the two phases that appeared as drops. It was found that the shift in the critical temperature as the spacing was varied followed a logarithmic dependence. Such a dependence is not expected from Scaling Theory for an Ising model, but is to be expected of systems with effectively infinite-range interactions. The coexistence curves for each spacing of the thick film indicated that the critical exponent ..beta.. was close to 0.5, which is the mean-field (infinite-range-interaction) value and not the two-dimensional Ising-model value of 0.125. The amplitude of the coexistence curves was found to vary with spacing as L/sup z/ with z in the range 0.6 ..-->.. 0.8. This was a much larger dependence than expected from the theory. 29 figures, 5 tables

  7. Relationship between Supplied Oil Flow Rates and Oil Film Thicknesses under Starved Elastohydrodynamic Lubrication

    OpenAIRE

    Taisuke Maruyama; Tsuyoshi Saitoh

    2015-01-01

    Many studies have already considered starved lubrication. However, there have been no reports on the oil film thicknesses under steady starved EHL (elastohydrodynamic lubrication), where the ultra-low volume of oil supplied per unit time is uniform. The present study examined the relationship between the supplied oil flow rate and oil film thickness under steady starved lubrication. A ball-on-disk testing machine was used in experiments to measure the oil film thickness by means of optical in...

  8. Low firing temperature thick-film piezoresistive composites: properties and conduction mechanism

    OpenAIRE

    Vionnet Menot, Sonia; Ryser, Peter

    2007-01-01

    Thick-film technology has found applications on miniaturised hybrid circuits in various fields (automotive electronics, televisions, ...). This technology is also now widely used for the fabrication of force and pressure sensors that use the piezoresistive properties of thick-film resistors. The goal of this work has been generated by the fact that usual piezoresistive pastes / inks were optimised for applications on alumina, which is the standard substrate for thick-film technology, but ill ...

  9. In vivo tear film thickness measurement and tear film dynamics visualization using spectral domain optical coherence tomography.

    Science.gov (United States)

    Aranha Dos Santos, Valentin; Schmetterer, Leopold; Gröschl, Martin; Garhofer, Gerhard; Schmidl, Doreen; Kucera, Martin; Unterhuber, Angelika; Hermand, Jean-Pierre; Werkmeister, René M

    2015-08-10

    Dry eye syndrome is a highly prevalent disease of the ocular surface characterized by an instability of the tear film. Traditional methods used for the evaluation of tear film stability are invasive or show limited repeatability. Here we propose a new non-invasive fully automated approach to measure tear film thickness based on spectral domain optical coherence tomography and on an efficient delay estimator. Silicon wafer phantom were used to validate the thickness measurement. The technique was applied in vivo in healthy subjects. Series of tear film thickness maps were generated, allowing for the visualization of tear film dynamics. Our results show that the in vivo central tear film thickness measurements are precise and repeatable with a coefficient of variation of about 0.65% and that repeatable tear film dynamics can be observed. The presented approach could be used in clinical setting to study patients with dry eye disease and monitor their treatments.

  10. Charge transport in films of Geobacter sulfurreducens on graphite electrodes as a function of film thickness

    KAUST Repository

    Jana, Partha Sarathi

    2014-01-01

    Harnessing, and understanding the mechanisms of growth and activity of, biofilms of electroactive bacteria (EAB) on solid electrodes is of increasing interest, for application to microbial fuel and electrolysis cells. Microbial electrochemical cell technology can be used to generate electricity, or higher value chemicals, from organic waste. The capability of biofilms of electroactive bacteria to transfer electrons to solid anodes is a key feature of this emerging technology, yet the electron transfer mechanism is not fully characterized as yet. Acetate oxidation current generated from biofilms of an EAB, Geobacter sulfurreducens, on graphite electrodes as a function of time does not correlate with film thickness. Values of film thickness, and the number and local concentration of electrically connected redox sites within Geobacter sulfurreducens biofilms as well as a charge transport diffusion co-efficient for the biofilm can be estimated from non-turnover voltammetry. The thicker biofilms, of 50 ± 9 μm, display higher charge transport diffusion co-efficient than that in thinner films, as increased film porosity of these films improves ion transport, required to maintain electro-neutrality upon electrolysis. This journal is © the Partner Organisations 2014.

  11. Non-linear dynamics of inlet film thickness during unsteady rolling process

    Science.gov (United States)

    Fu, Kuo; Zang, Yong; Gao, Zhiying; Qin, Qin; Wu, Diping

    2016-05-01

    The inlet film thickness directly affects film and stress distribution of rolling interfaces. Unsteady factors, such as unsteady back tension, may disturb the inlet film thickness. However, the current models of unsteady inlet film thickness lack unsteady disturbance factors and do not take surface topography into consideration. In this paper, based on the hydrodynamic analysis of inlet zone an unsteady rolling film model which concerns the direction of surface topography is built up. Considering the small fluctuation of inlet angle, absolute reduction, reduction ratio, inlet strip thickness and roll radius as the input variables and the fluctuation of inlet film thickness as the output variable, the non-linear relationship between the input and output is discussed. The discussion results show that there is 180° phase difference between the inlet film thickness and the input variables, such as the fluctuant absolute reduction, the fluctuant reduction ratio and non-uniform inlet strip thickness, but there is no phase difference between unsteady roll radius and the output. The inlet angle, the steady roll radius and the direction of surface topography have significant influence on the fluctuant amplitude of unsteady inlet film thickness. This study proposes an analysis method for unsteady inlet film thickness which takes surface topography and new disturbance factors into consideration.

  12. Screen printed barium titanate thick films prepared from mechanically activated powders

    Energy Technology Data Exchange (ETDEWEB)

    Stojanovic, B.D. [Universidad Estadual Paulista, Sao Paulo (Brazil). Inst. de Quimica; Belgrade Univ. (Yugoslavia). Center for Multidisciplinary Studies; Foschini, C.R.; Varela, J.A. [Universidad Estadual Paulista, Sao Paulo (Brazil). Inst. de Quimica; Pejovic, V.Z. [IRITEL, Belgrade (Yugoslavia); Pavlovic, V.B. [Faculty for Agriculture, Dept. of Physics, UB (Yugoslavia); Pavlovic, V.P. [Faculty for Mechanical Engineering, Dept. of Physics, UB (Yugoslavia)

    2002-07-01

    Barium titanate thick films were prepared from mechanically activated powders based on BaCO{sub 3} and TiO{sub 2}. The thick films were screen-printed on alumina substrates electroded with Ag/Pd. The BT films were sintered at 850 C for 1 hour. The thickness was 30-75 {mu}m depending of number of layers. The microstructure of thick films and the compatibility between BT layers and substrate was investigated by SEM. The dielectric properties were measured and the results were reported. (orig.)

  13. Mode-locking resonance for driven vortex matter in thick and thin superconducting films

    International Nuclear Information System (INIS)

    We report on measurements of the mode-locking (ML) resonance for the thick and thin films of amorphous MoxGe1-x with weak pinning. The clear ML resonance indicative of driven vortex lattices is observed for the thick film, while it is not visible for the thin film. The results suggest that for the thin film the elasticity of driven lattices may be significantly reduced and the lattices may be unstable against small pinning.

  14. Development of Dual-light Path Monitoring System of Optical Thin-film Thickness

    Institute of Scientific and Technical Information of China (English)

    XU Shi-jun

    2005-01-01

    The accurate monitoring of optical thin-film thickness is a key technique for depositing optical thin-film. For existing coating equipments, which are low precision and automation level on monitoring thin-film thickness, a new photoelectric control and analysis system has been developed. In the new system, main techniques include a photoelectric system with dual-light path, a dual-lock-phase circuit system and a comprehensive digital processing-control-analysis system.The test results of new system show that the static and dynamic stabilities and the control precision of thin-film thickness are extremely increased. The standard deviation of thin-film thickness, which indicates the duplication of thin-film thickness monitoring, is equal to or less than 0.72%. The display resolution limit on reflectivity is 0.02 %. In the system, the linearity of drift is very high, and the static drift ratio approaches zero.

  15. Preparation and characterization of microcrack-free thick YBa2Cu3O7-δ films

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    High quality epitaxial YBa2Cu3O7-δ (YBCO) superconducting films were fabricated on (00l) LaAlO3 substrates using the direct-current sputtering method. The attainment of an unusually high film thickness (up to 2.0 μm) without microcracking was attributed in part to the presence of pores correlated with yttrium-rich composition in the films. The influence of the film thickness on the microstructure was investigated by X-ray diffraction conventional scan (θ-2θ, ω-scan, pole figure) and high-resolution reciprocal space mapping. The films were c-axis oriented with no a-axis-oriented grains up to the thickness of 2 μm. The surface morphology and the critical current density (Jc) strongly depended on the film thickness.Furthermore, the reasons for these thickness dependences were elucidated in derail.

  16. Method and system for producing sputtered thin films with sub-angstrom thickness uniformity or custom thickness gradients

    Science.gov (United States)

    Folta, James A.; Montcalm, Claude; Walton, Christopher

    2003-01-01

    A method and system for producing a thin film with highly uniform (or highly accurate custom graded) thickness on a flat or graded substrate (such as concave or convex optics), by sweeping the substrate across a vapor deposition source with controlled (and generally, time-varying) velocity. In preferred embodiments, the method includes the steps of measuring the source flux distribution (using a test piece that is held stationary while exposed to the source), calculating a set of predicted film thickness profiles, each film thickness profile assuming the measured flux distribution and a different one of a set of sweep velocity modulation recipes, and determining from the predicted film thickness profiles a sweep velocity modulation recipe which is adequate to achieve a predetermined thickness profile. Aspects of the invention include a practical method of accurately measuring source flux distribution, and a computer-implemented method employing a graphical user interface to facilitate convenient selection of an optimal or nearly optimal sweep velocity modulation recipe to achieve a desired thickness profile on a substrate. Preferably, the computer implements an algorithm in which many sweep velocity function parameters (for example, the speed at which each substrate spins about its center as it sweeps across the source) can be varied or set to zero.

  17. 3D thickness profile measurement of thin films coated on the microscopic area

    International Nuclear Information System (INIS)

    Film thickness profile measurements are crucial in manufacturing processes of thin film–based devices that require precisely controlled thickness and surface morphology. However, film thickness measurement techniques, such as scanning electron microscopy, transmission electron microscopy, and ellipsometry, are limited to 1D or 2D analyses. We propose a new method to measure 3D thickness profiles. The resulting profiles contain not only the thin film surface morphologies but also 3D thickness data. The proposed method includes direct surface measurements and an alignment process utilizing fiducial marks. The top and bottom surface profiles of the film are directly measured using atomic force microscopy before and after a selective etching process. The proposed method based on simple principles including surface measurement and alignment processes is capable of evaluating films that are too thick to be measured using optical methods. (paper)

  18. Layer-by-layer assembly of nanocomposite films with thickness up to hundreds of nanometers

    Institute of Scientific and Technical Information of China (English)

    ZHOU Ling-de; YAN Yu-hua; YU Hai-hu; GU Er-dan; JIANG De-sheng

    2006-01-01

    Polyelectrolyte/polyelectrolyte, organic molecule/colloidal CdS and polyelectrolyte/MWCNT films were fabricated via the layer-by-layer assembling technique. The assembled films were characterized by UV-vis spectrophotometer, X-ray diffractometry,nano profilometer and scanning electron microscopy. The results demonstrate that the layer-by-layer assembling technique can be used to make the nanoscaled films from polyelectrolytes and thicker composite films from suitable precursor materials. Both organic molecule/colloidal CdS films and PEI/MWCNT films with thickness of hundreds of nanometers were obtained. For the organic molecule/colloidal CdS films, a reasonable explanation for the result is that both the organic molecules and the CdS particles aggregate in the films. For the PEI/MWCNT films, obviously, it is the MWCNT that makes the great contribution to the film thickness.

  19. Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

    Science.gov (United States)

    Shinde, Seema; Singh, S. G.; Sen, S.; Gadkari, S. C.

    2016-02-01

    Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 μm to 1000 μm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed.

  20. The spatial thickness distribution of metal films produced by large area pulsed laser deposition

    DEFF Research Database (Denmark)

    Pryds, Nini; Schou, Jørgen; Linderoth, Søren

    2007-01-01

    -over" of the plume. The thickness of the deposited films over the full area has been determined by energy-dispersive X-ray spectrometry in a scanning electron microscope (SEM). The measured distributions were then compared with analytical expressions. Finally, the angular distribution of the film thickness has been...

  1. Raman micro-spectroscopy for quantitative thickness measurement of nanometer thin polymer films

    NARCIS (Netherlands)

    Liszka, Barbara M.; Lenferink, Aufried T.M.; Witkamp, Geert-Jan; Otto, Cees

    2015-01-01

    The sensitivity of far-field Raman micro-spectroscopy was investigated to determine quantitatively the actual thickness of organic thin films. It is shown that the thickness of organic films can be quantitatively determined down to 3 nm with an error margin of 20% and down to 1.5 nm with an error ma

  2. Development of a metrology method for composition and thickness of barium strontium titanate thin films

    International Nuclear Information System (INIS)

    Thin films of barium strontium titanate (BST) are being investigated as the charge storage dielectric in advanced memory devices, due to their promise for high dielectric constant. Since the capacitance of BST films is a function of both stoichiometry and thickness, implementation into manufacturing requires precise metrology methods to monitor both of these properties. This is no small challenge, considering the BST film thicknesses are 60 nm or less. A metrology method was developed based on X-ray Fluorescence and applied to the measurement of stoichiometry and thickness of BST thin films in a variety of applications

  3. Refractive index gradient measurement across the thickness of a dielectric film by the prism coupling method

    International Nuclear Information System (INIS)

    A method is proposed for measuring the refractive index gradient n(z) in nonuniformly thick dielectric films. The method is based on the excitation of waveguide modes in a film using the prism coupling technique and on the calculation of n(z) and film thickness Hf with the help of the angular positions of the TE or TM modes. The method can be used for an arbitrary shape of the index modulation over the film thickness in the limit of a small gradient [Δ n(z)/n(z) || 1]. (laser applications and other topics in quantum electronics)

  4. Dependence of Thermal Conductivity on Thickness in Single-Walled Carbon Nanotube Films.

    Science.gov (United States)

    Lee, Kyung-Min; Shrestha, Ramesh; Dangol, Ashesh; Chang, Won Seok; Coker, Zachary; Choi, Tae-Youl

    2016-01-01

    Herein, we report experimentally dependence of thermal conductivity on thickness of single walled carbon nanotubes (SWNTs) thin films; the measurements are based on the micropipette thermal sensor technique. Accurate and well resolved measurements of thermal conductivity made by the micropipette sensor showed a correlated behavior of thickness and thermal conductivity of CNT films that thermal conductivity decreased as thickness increased. The thickness dependence is explained by reduction of mean free path (MFP), which is induced by more intertubular junctions in more dense-packed carbon nanotube (CNT) networks; the thicker SWCNT films were revealed to have higher density. PMID:27398564

  5. Structural, magnetic and transport properties of Co2FeAl Heusler films with varying thickness

    Science.gov (United States)

    Wang, Xiaotian; Li, Yueqing; Du, Yin; Dai, Xuefang; Liu, Guodong; Liu, Enke; Liu, Zhongyuan; Wang, Wenhong; Wu, Guangheng

    2014-08-01

    We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co2FeAl (CFA) epitaxial films on MgO (001), as a function of film thickness. It was found that the epitaxial CFA films show a highly ordered B2 structure with an in-plane uniaxial magnetic anisotropy. The electrical transport properties reveal that the lattice and magnon scattering contributions to the longitudinal resistivity. Independent on the thickness of films, the anomalous Hall resistivity of CFA films is found to be dominated by skew scattering only. Moreover, the anomalous Hall resistivity shows weakly temperature dependent behavior, and its absolute value increases as the thickness decreases. We attribute this temperature insensitivity in the anomalous Hall resistivity to the weak temperature dependent of tunneling spin-polarization in the CFA films, while the thickness dependence behavior is likely due to the increasing significance of interface or free surface electronic states.

  6. Enhanced piezoelectric performance of composite sol-gel thick films evaluated using piezoresponse force microscopy.

    Science.gov (United States)

    Liu, Yuanming; Lam, Kwok Ho; Kirk Shung, K; Li, Jiangyu; Zhou, Qifa

    2013-05-14

    Conventional composite sol-gel method has been modified to enhance the piezoelectric performance of ceramic thick films. Lead zirconate titanate (PZT) and lead magnesium niobate-lead titanate (PMN-PT) thick films were fabricated using the modified sol-gel method for ultrasonic transducer applications. In this work, piezoresponse force microscopy was employed to evaluate the piezoelectric characteristics of PZT and PMN-PT composite sol-gel thick films. The images of the piezoelectric response and the strain-electric field hysteresis loop behavior were measured. The effective piezoelectric coefficient (d33,eff) of the films was determined from the measured loop data. It was found that the effective local piezoelectric coefficient of both PZT and PMN-PT composite films is comparable to that of their bulk ceramics. The promising results suggest that the modified composite sol-gel method is a promising way to prepare the high-quality, crack-free ceramic thick films. PMID:23798771

  7. Film Thickness and Flow Properties of Resin-Based Cements at Different Temperatures

    Directory of Open Access Journals (Sweden)

    Bagheri R.

    2013-06-01

    Full Text Available Statement of Problem: For a luting agent to allow complete seating of prosthetic restorations, it must obtain an appropriate flow rate maintaining a minimum film thickness. The performance of recently introduced luting agents in this regard has not been evaluated. Purpose: To measure and compare the film thickness and flow properties of seven resin-containing luting cements at different temperatures (37°C, 25°C and10°C. Material and Methods: Specimens were prepared from five resin luting cements; seT (SDI, Panavia F (Kuraray, Varioloink II (Ivoclar, Maxcem (Kerr, Nexus2 (Kerr and two resin-modified glass-ionomer luting cements (RM-GICs; GC Fuji Plus (GC Corporation, and RelyX Luting 2 (3 M/ESPE. The film thickness and flow rate of each cement (n=15 was determined using the test described in ISO at three different temperatures. Results: There was a linear correlation between film thickness and flow rate for most of the materials. Cooling increased fluidity of almost all materials while the effect of temperature on film thickness was material dependent. At 37°C, all products revealed a film thickness of less than 25µm except for GC Fuji Plus. At 25°C, all cements pro-duced a film thickness of less than 27 µm except for seT. At 10°C, apart from seT and Rely X Luting 2, the remaining cements showed a film thickness smaller than 20 µm.Conclusion: Cooling increased fluidity of almost all materials, however. the film thickness did not exceed 35 µm in either condition, in spite of the lowest film thickness being demonstrated at the lowest temperature.

  8. Acoustic measurement of lubricant-film thickness distribution in ball bearings

    OpenAIRE

    Zhang, J.; Drinkwater, B. W.; Dwyer-Joyce, R.S.

    2006-01-01

    An oil-film thickness monitoring system capable of providing an early warning of lubrication failure in rolling element bearings has been developed. The system is used to measure the lubricant-film thickness in a conventional deep groove ball bearing (shaft diameter 80 mm, ball diameter 12.7 mm). The measurement system comprises a 50 MHz broadband ultrasonic focused transducer mounted on the static outer raceway of the bearing. Typically the lubricant-films in rolling element bearings are bet...

  9. The phase shift of an ultrasonic pulse at an oil layer and determination of film thickness

    OpenAIRE

    Reddyhoff, T.; S. Kasolang; Dwyer-Joyce, R.S.; Drinkwater, B. W.

    2005-01-01

    An ultrasonic pulse incident on a lubricating oil film in a machine element will be partially reflected and partially transmitted. The proportion of the wave amplitude reflected, termed the reflection coefficient, depends on the film thickness and the acoustic properties of the oil. When the appropriate ultrasonic frequency is used, the magnitude of the reflection coefficient can be used to determine the oil film thickness. However, the reflected wave has both a real component and an imaginar...

  10. Electroplated Fe-Pt thick films prepared in plating baths with various pH values

    OpenAIRE

    Yanai, T; Furutani, K.; Masaki, T; T. Ohgai; Nakano, M; Fukunaga, H

    2016-01-01

    Fe-Pt thick-films were electroplated on a Ta substrate using a direct current, and the effect of the pH value of the plating bath on the magnetic properties of the films was evaluated. For the films prepared from the baths with the same bath composition, the Fe composition and the thickness increased with increasing the pH value. In order to remove the effect of the change in the film composition on the magnetic properties, we controlled the film composition at approximately Fe50Pt50 or Fe60P...

  11. Effect of thickness and temperature of copper phthalocyanine films on their properties

    Directory of Open Access Journals (Sweden)

    Alieva Kh. S.

    2012-06-01

    Full Text Available The research has shown that copper phthalocyanine films, having a set of unique properties, can be successfully used as gas-sensitive coating of resistive structures. The thickness of the film, in contrast to its temperature, is not the determining factor for high sensitivity. Low operating temperature of structures with copper phthalocyanine films allows to exploit them in economy mode.

  12. Microstructural parameters and optical constants of ZnTe thin films with various thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Shaaban, Essam R., E-mail: esam_ramadan2008@yahoo.co [Physics Department, Faculty of Science, Al-Azhar University, Assiut 71542 (Egypt) and Physics Department, Faculty of Science, Qassium University, Buridah 51452 (Saudi Arabia); Kansal, Ishu [Department of Ceramics and Glass Engineering, University of Aveiro, CICECO, 3810-193 Aveiro (Portugal); Mohamed, S.H. [Physics Department, Faculty of Science, Qassium University, Buridah 51452 (Saudi Arabia); Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); Ferreira, Joes M.F. [Department of Ceramics and Glass Engineering, University of Aveiro, CICECO, 3810-193 Aveiro (Portugal)

    2009-11-01

    Different thickness of polycrystalline ZnTe films have been deposited onto glass substrates at room temperature by vacuum evaporation technique. The structural characteristics studied by X-ray diffraction (XRD) showed that the films are polycrystalline and have a zinc blende (cubic) structure. The calculated microstructure parameters revealed that the crystallite size increases and microstrain decreases with increasing film thickness. The transmittance and reflectance have been measured at normal and near normal incidence, respectively, in the spectral range 400-2500 nm. For ZnTe films of different thicknesses, the dependence of absorption coefficient, alpha on the photon energy showed the occurrence of a direct transition with band gap energy E{sub g}{sup opt}=2.21+-0.01eV (For ZnTe films of different thicknesses) confirming the independency of deduced energy gap on film thickness. The refractive indices have been evaluated in terms of envelope method, which has been suggested by Swanepoul in the transparent region. The refractive index could be extrapolated by Cauchy dispersion relationship over the whole spectra range, which extended from 400 to 2500 nm. It was observed that the refractive index, n increased upon increasing the film thickness up to 508 nm, lying within the experimental error for further increases in film thickness.

  13. High-Jc YBCO films using precursors with barium concentration gradient in film thickness by TFA-MOD process

    International Nuclear Information System (INIS)

    YBa2Cu3O7-δ (YBCO) films were grown by using precursor films with barium concentration gradient in film thickness by an advanced metal organic deposition process using trifluoroacetates (TFA-MOD). We have reported previously that a lot of non-reacted particles such as Y- and Cu-oxides were remained for the YBCO film surface grown by the precursors using a starting solution with barium-poor (cation ratio as Y:Ba:Cu 1:1.5:3). Then, the barium concentration was increased in the film surface to complete the reaction among these Y and Cu residues and Ba and to increase the Y123 growth thickness for realizing higher Jc performance. Transmission electron microscopy (TEM) observation showed the increase of film thickness of YBCO grown by the precursors with barium concentration gradient in film thickness, indicating that the reaction between these Y and Cu-oxides and Ba proceeded to form Y123 phase. Consequently, higher Jc was obtained for the YBCO film by the precursors mentioned above than that of the YBCO film by the precursors with a constant concentration. Effects of barium concentration gradient in the precursors on the superconducting properties and microstructures in the YBCO film were discussed.

  14. Confining substrate for micron-thick liquid films

    OpenAIRE

    Kuech, T. F.; McCaldin, J. O.

    1980-01-01

    Suitable combinations of surface geometry and material enable a substrate to hold a thin liquid film captive on its surface. Though only at metastable equilibrium, such films can survive a moderate amount of processing. They may be suited to the growth of semiconductor single-crystal films on amorphous substrates.

  15. Noise properties of Pb/Cd-free thick film resistors

    Science.gov (United States)

    Witold Stadler, Adam; Kolek, Andrzej; Zawiślak, Zbigniew; Mleczko, Krzysztof; Jakubowska, Małgorzata; Rafał Kiełbasiński, Konrad; Młożniak, Anna

    2010-07-01

    Low-frequency noise spectroscopy has been used to examine noise properties of Pb/Cd-free RuO2- and CaRuO3-based thick films screen printed on alumina substrates. Experiments were performed in the temperature range 77-300 K and the frequency range 0.5-5000 Hz with multiterminal devices. The measured noise has been recognized as resistance noise that consists of background 1/f noise and components generated by several thermally activated noise sources (TANSs) of different activation energies. The total noise has been composed of the contributions generated in the resistive layer and in the resistive/conductive layers interface. These noise sources are non-uniformly distributed in the resistor volume. Noise intensity of new-resistive layers has been described by the noise parameter Cbulk. Pb/Cd-free layers turned out to be noisier than their Pb-containing counterparts; however, the removal of Pb and Cd from resistive composition is hardly responsible for the increase in the noise. In the case of RuO2 layers noise increases most likely due to larger grain size of RuO2 powder used to prepare resistive pastes. Information on the quality of the resistive-to-conductive layers interface occurred to be stored in the values of noise parameter Cint. Pb/Cd-free RuO2-based resistive pastes form well-behaved interfaces with various Ag-based conductive pastes. In contrast, CaRuO3-based paste forms bad contacts with AgPd terminations because the density of TANSs increases in the interface area.

  16. Noise properties of Pb/Cd-free thick film resistors

    International Nuclear Information System (INIS)

    Low-frequency noise spectroscopy has been used to examine noise properties of Pb/Cd-free RuO2- and CaRuO3-based thick films screen printed on alumina substrates. Experiments were performed in the temperature range 77-300 K and the frequency range 0.5-5000 Hz with multiterminal devices. The measured noise has been recognized as resistance noise that consists of background 1/f noise and components generated by several thermally activated noise sources (TANSs) of different activation energies. The total noise has been composed of the contributions generated in the resistive layer and in the resistive/conductive layers interface. These noise sources are non-uniformly distributed in the resistor volume. Noise intensity of new-resistive layers has been described by the noise parameter Cbulk. Pb/Cd-free layers turned out to be noisier than their Pb-containing counterparts; however, the removal of Pb and Cd from resistive composition is hardly responsible for the increase in the noise. In the case of RuO2 layers noise increases most likely due to larger grain size of RuO2 powder used to prepare resistive pastes. Information on the quality of the resistive-to-conductive layers interface occurred to be stored in the values of noise parameter Cint. Pb/Cd-free RuO2-based resistive pastes form well-behaved interfaces with various Ag-based conductive pastes. In contrast, CaRuO3-based paste forms bad contacts with AgPd terminations because the density of TANSs increases in the interface area.

  17. Characterization of Thin Film Dissolution in Water with in Situ Monitoring of Film Thickness Using Reflectometry.

    Science.gov (United States)

    Yersak, Alexander S; Lewis, Ryan J; Tran, Jenny; Lee, Yung C

    2016-07-13

    Reflectometry was implemented as an in situ thickness measurement technique for rapid characterization of the dissolution dynamics of thin film protective barriers in elevated water temperatures above 100 °C. Using this technique, multiple types of coatings were simultaneously evaluated in days rather than years. This technique enabled the uninterrupted characterization of dissolution rates for different coating deposition temperatures, postdeposition annealing conditions, and locations on the coating surfaces. Atomic layer deposition (ALD) SiO2 and wet thermally grown SiO2 (wtg-SiO2) thin films were demonstrated to be dissolution-predictable barriers for the protection of metals such as copper. A ∼49% reduction in dissolution rate was achieved for ALD SiO2 films by increasing the deposition temperatures from 150 to 300 °C. ALD SiO2 deposited at 300 °C and followed by annealing in an inert N2 environment at 1065 °C resulted in a further ∼51% reduction in dissolution rate compared with the nonannealed sample. ALD SiO2 dissolution rates were thus lowered to values of wtg-SiO2 in water by the combination of increasing the deposition temperature and postdeposition annealing. Thin metal films, such as copper, without a SiO2 barrier corroded at an expected ∼1-2 nm/day rate when immersed in room temperature water. This measurement technique can be applied to any optically transparent coating. PMID:27308723

  18. Preparation and study of thickness dependent electrical characteristics of zinc sulfide thin films

    Indian Academy of Sciences (India)

    A U Ubale; D K Kulkarni

    2005-02-01

    Zinc sulfide thin films have been deposited onto glass substrates by chemical bath deposition. The various deposition parameters such as volume of sulfide ion source, pH of bath, deposition time, temperature etc are optimized. Thin films of ZnS with different thicknesses of 76–332 nm were prepared by changing the deposition time from 6–20 h at 30°C temperature. The effect of film thickness on structural and electrical properties was studied. The electrical resistivity was decreased from 1.83 × 105 -cm to 0.363 × 105 -cm as film thickness decreased from 332 nm to 76 nm. The structural and activation energy studies support this decrease in the resistivity due to improvement in crystallinity of the films which would increase the charge carrier mobility and decrease in defect levels with increase in the thickness.

  19. Effect of thickness on nonlinear absorption properties of graphite oxide thin films

    Science.gov (United States)

    Sreeja, V. G.; Cheruvalathu, Ajina; Reshmi, R.; Anila, E. I.; Thomas, Sheenu; Jayaraj, M. K.

    2016-10-01

    We report the thickness dependent structural, linear and nonlinear optical properties of graphite oxide (GO) thin films synthesized by spin coating method. We observed that the structural, linear and nonlinear optical properties can be tuned by the film thickness in GO. The nonlinear absorption studies by open aperture z scan technique exhibited a saturable absorption. The nonlinear absorption coefficient and saturation intensity varies with film thickness which is attributed to increased localized defect states in the energy band gap. Our results emphasize relatively large thickness dependent optical nonlinearity of GO thin films and its potential for optical pulse generation, exploring the way to GO based nonlinear applications in Q switched mode locking laser systems. All the coated GO films were characterized by X-Ray diffraction method (XRD), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, UV-Vis absorption spectroscopy (UV-Vis), Photoluminescence (PL) and Scanning electron microscope (SEM) measurements.

  20. Studies on gas sensing performance of pure and modified barium strontium titanate thick film resistors

    Indian Academy of Sciences (India)

    G H Jain; L A Patil; P P Patil; U P Mulik; K R Patil

    2007-02-01

    Barium strontium titanate ((Ba0.87Sr0.13)TiO3–BST) ceramic powder was prepared by mechanochemical process. The thick films of different thicknesses of BST were prepared by screen-printing technique and gas-sensing performance of these films was tested for various gases. The films showed highest response and selectivity to ammonia gas. The effect of film thickness on gas response was also studied. As prepared BST thick films were surface modified by dipping them into an aqueous solution of titanium chloride (TiCl3) for different intervals of time. Surface modification shifted response to H2S gas suppressing the responses to ammonia and other gases. The surface modification, using dipping process, altered the adsorbate–adsorbent interactions, which gave the unusual sensitivity and selectivity effect. Sensitivity, selectivity, thermal stability, response and recovery time of the sensor were measured and presented.

  1. The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

    International Nuclear Information System (INIS)

    The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi0.5Sb1.5Te3 (p-type) and Bi2Te2.7Se0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr2Te3. The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr2Te3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

  2. Influence of Thickness on Ethanol Sensing Characteristics of Doctor-bladed Thick Film from Flame-made ZnO Nanoparticles

    Directory of Open Access Journals (Sweden)

    Sukon Phanichphant

    2007-02-01

    Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis (FSP using zincnaphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particleproperties were analyzed by XRD, BET, and HR-TEM. The sensing films were produced bymixing the particles into an organic paste composed of terpineol and ethyl cellulose as avehicle binder and were fabricated by doctor-blade technique with various thicknesses (5,10, 15 μm. The morphology of the sensing films was analyzed by SEM and EDS analyses.The gas sensing characteristics to ethanol (25-250 ppm were evaluated as a function of filmthickness at 400°C in dry air. The relationship between thickness and ethanol sensingcharacteristics of ZnO thick film on Al2O3 substrate interdigitated with Au electrodes wereinvestigated. The effects of film thickness, as well as the cracking phenomenon, though,many cracks were observed for thicker sensing films. Crack widths increased withincreasing film thickness. The film thickness, cracking and ethanol concentration havesignificant effect on the sensing characteristics. The sensing characteristics with variousthicknesses were compared, showing the tendency of the sensitivity to ethanol decreasedwith increasing film thickness and response time. The relationship between gas sensingproperties and film thickness was discussed on the basis of diffusively and reactivity of thegases inside the oxide films. The thinnest sensing film (5 μm showed the highest sensitivityand the fastest response time (within seconds.

  3. Y-Ba-Cu-O thick film preparation using multistep KrF excimer laser deposition

    International Nuclear Information System (INIS)

    Thick films of high-temperature superconductors (HTSC) have attracted much attention to a number of current-carrying applications such as current leads, interconnects, current limiters and cryotron-type switches. As the film thickness of HTSC films is increased using the conventional method of pulsed laser deposition, the surface morphology is degraded during the film deposition. This structural transition results in decreasing the critical current density with the film thickness. Here, a multistep deposition technique in the KrF excimer laser ablation is used to prepare Y-Ba-Cu-O thick films. The high-quality Y-Ba-Cu-O superconducting films of thickness of a few mm were formed by optimizing the processing conditions from the bottom to the surface of the film. The initial ultrathin layer of a few nm was prepared at the low repetition rate of 1 Hz at laser fluence 3 J cm-2. Then, various repetition rates at the fluence 2 J cm-2 were chosen for deposition of the intermediate layer and the surface layer, both with thicknesses of about 1 μm. It is shown that surface morphology and vertical growth are significantly dominated by the initial layer structure and the following deposition conditions. The thick films with high Tc(zero) 89 K were obtained when the surface layer was prepared at a lower repetition rate under lower process temperature. The three step procedure prepared the superconducting thick films with the critical current density of 1.2 x 106 A cm-2 (at 5 K). (orig.)

  4. Evaluation of feasibility of measuring EHD film thickness associated with cryogenic fluids

    Science.gov (United States)

    Kannel, J. W.; Merriman, T. L.; Stockwell, R. D.; Dufrane, K. F.

    1983-08-01

    The feasibility of measuring elastohydrodynamic (EHD) films as formed with a cryogenic (LN2) fluid is evaluated. Modifications were made to an existing twin disk EHD apparatus to allow for disk lubrication with liquid nitrogen. This disk apparatus is equipped with an X-ray system for measuring the thickness of any lubricant film that is formed between the disks. Several film thickness experiments were conducted with the apparatus which indicate that good lubrication films are filmed with LN2. In addition to the film thickness studies, failure analyses of three bearings were conducted. The HPOTP turbine end bearings had experienced axial loads of 36,000 to 44,000 N (8,000 to 10,000 lb). High continuous radial loads were also experienced, which were most likely caused by thermal growth of the inner race. The resulting high internal loads caused race spalling and ball wear to occur.

  5. Electrochromic properties of aqueous sol-gel derived vanadium oxide films with different thickness

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Z.; Chen, J.; Hu, X. [Academia Sinica, Shanghai, SH (China). Inst. of Ceramics

    2000-10-31

    Vanadium oxide films were spin-coated on ITO-coated glass substrates with a coating solution prepared by dissolving V{sub 2}O{sub 5} powder in H{sub 2}O{sub 2} solution. The cycling behaviors of the films annealed at 150 C for 1 h with different thickness were studied using cyclic voltammetry (CV) in propylene carbonate solution containing 1 mol/l LiClO{sub 4}. Electrochromism of the films upon lithium intercalation was investigated by in-situ transmittance measurements during the CV process. The vanadium oxide films showed reversible multichromism (yellow<->green<->blue) upon Li{sup +} ion insertion/extraction. Transmittance modulation range can be varied by adjusting the film thickness. Vanadium oxide films with proper thickness could be used in realization of multicolored electrochromic devices. (orig.)

  6. Abnormal Cutoff Thickness of Long-Range Surface Plasmon Polariton Modes Guided by Thin Metal Films

    Institute of Scientific and Technical Information of China (English)

    LIU Fang; RAO Yi; HUANG Yi-Dong; ZHANG Wei; PENG Jiang-De

    2007-01-01

    Long-range surface plasmon polariton(LRSPP) modes guided by a thin metal film surrounded by semi-infinite dielectrics with different refractive indices are studied.Our cMculation results show that the cutoff thickness of the metal film does not monotonically increase with refractive index difference △n between the SHbstrate and superstrate.Just because of this abnormal behaviour of cutoff thickness,the existence of LRSPP illustrates complicated situations in asymmetric configurations.For a certain metal film thickness,LRsPP may exist in one.two or three refractive index difference △n regions.

  7. High-performance piezoelectric thick film based energy harvesting micro-generators for MEMS

    DEFF Research Database (Denmark)

    Zawada, Tomasz; Hansen, Karsten; Lou-Moeller, Rasmus;

    2010-01-01

    and are transformed by the energy harvesting micro-generator into usable electrical signal. The micro-generator comprises a silicon cantilever with integrated InSensor® TF2100 PZT thick film deposited using screen-printing. The output power versus frequency and electrical load has been investigated. Furthermore......, devices based on modified, pressure treated thick film materials have been tested and compared with the commercial InSensor® TF2100 PZT thick films. It has been found that the structures based on the pressure treated materials exhibit superior properties in terms of energy output....

  8. Ultrasonic oil-film thickness measurement: An angular spectrum approach to assess performance limits

    OpenAIRE

    Zhang, J.; Drinkwater, B. W.; Dwyer-Joyce, R.S.

    2007-01-01

    The performance of ultrasonic oil-film thickness measurement in a ball bearing is quantified. A range of different viscosity oils (Shell T68, VG15, and VG5) are used to explore the lowest reflection coefficient and hence the thinnest oil-film thickness that the system can measure. The results show a minimum reflection coefficient of 0.07 for both oil VG15 and VG5 and 0.09 for oil T68 at 50 MHz. This corresponds to an oil-film thickness of 0.4 μm for T68 oil. An angular spectrum (or Fourier d...

  9. Ptychographic Imaging of Branched Colloidal Nanocrystals Embedded in Free-Standing Thick Polystyrene Films

    Science.gov (United States)

    de Caro, Liberato; Altamura, Davide; Arciniegas, Milena; Siliqi, Dritan; Kim, Mee R.; Sibillano, Teresa; Manna, Liberato; Giannini, Cinzia

    2016-01-01

    Research on composite materials is facing, among others, the challenging task of incorporating nanocrystals, and their superstructures, in polymer matrices. Electron microscopy can typically image nanometre-scale structures embedded in thin polymer films, but not in films that are micron size thick. Here, X-ray Ptychography was used to visualize, with a resolution of a few tens of nanometers, how CdSe/CdS octapod-shaped nanocrystals self-assemble in polystyrene films of 24 ± 4 μm, providing a unique means for non-destructive investigation of nanoparticles distribution and organization in thick polymer films.

  10. Tailoring of Luminous Transmittance upon Switching for Thermochromic VO2 Films by Thickness Control

    Science.gov (United States)

    Xu, Gang; Jin, Ping; Tazawa, Masato; Yoshimura, Kazuki

    2004-01-01

    The difference in luminous transmittance (Δ Tlum) upon switching of VO2 films strongly affects its solar controllability when used as a thermochromic window. It was found that Δ Tlum is controllable by film thickness. Optical calculation for a VO2 film on quartz glass revealed that the low-temperature semiconductor phase exhibits lower Tlum than the high-temperature metallic phase for thickness below 50 nm, while the relationship is reversed above 50 nm. The calculation was confirmed by film deposition and measurement. Maximum Δ Tlum is located near 80 nm. An enhanced Δ Tlum contributes largely to solar efficiency.

  11. The measurement of lubricant-film thickness using ultrasound

    OpenAIRE

    Dwyer-Joyce, R.S.; Drinkwater, B. W.; Donohoe, C.J.

    2003-01-01

    Ultrasound is reflected from a liquid layer between two solid bodies. This reflection depends on the ultrasonic frequency, the acoustic properties of the liquid and solid, and the layer thickness. If the wavelength is much greater than the liquid-layer thickness, then the response is governed by the stiffness of the layer. If the wavelength and layer thickness are similar, then the interaction of ultrasound with the layer is controlled by its resonant behaviour. This stiffness governed respon...

  12. In vivo tear film thickness measurement and tear film dynamics visualization using spectral domain OCT and an efficient delay estimator

    Science.gov (United States)

    Aranha dos Santos, Valentin; Schmetterer, Leopold; Gröschl, Martin; Garhofer, Gerhard; Werkmeister, René M.

    2016-03-01

    Dry eye syndrome is a highly prevalent disease of the ocular surface characterized by an instability of the tear film. Traditional methods used for the evaluation of tear film stability are invasive or show limited repeatability. Here we propose a new noninvasive approach to measure tear film thickness using an efficient delay estimator and ultrahigh resolution spectral domain OCT. Silicon wafer phantoms with layers of known thickness and group index were used to validate the estimator-based thickness measurement. A theoretical analysis of the fundamental limit of the precision of the estimator is presented and the analytical expression of the Cramér-Rao lower bound (CRLB), which is the minimum variance that may be achieved by any unbiased estimator, is derived. The performance of the estimator against noise was investigated using simulations. We found that the proposed estimator reaches the CRLB associated with the OCT amplitude signal. The technique was applied in vivo in healthy subjects and dry eye patients. Series of tear film thickness maps were generated, allowing for the visualization of tear film dynamics. Our results show that the central tear film thickness precisely measured in vivo with a coefficient of variation of about 0.65% and that repeatable tear film dynamics can be observed. The presented method has the potential of being an alternative to breakup time measurements (BUT) and could be used in clinical setting to study patients with dry eye disease and monitor their treatments.

  13. Thickness dependent magnetic transitions in pristine MgO and ZnO sputtered thin films

    Directory of Open Access Journals (Sweden)

    Mukes Kapilashrami

    2010-09-01

    Full Text Available We report a systematic study of the thickness dependency of room temperature ferromagnetism in pristine MgO (~100–500 nm and ZnO (~100–1000 nm thin films deposited by reactive magnetron sputtering technique under the respective identical controlled optimum oxygen ambience. As far as we know this is the first such report on ferromagnetic pure MgO thin films, a result which should be of significance in understanding the functional aspects of magnetic tunnelling characteristics in devices using MgO dielectrics. From the magnetic characterization we observe a distinct variation in the saturation magnetization (MS with increasing film thickness. In the case of MgO thin films MS values vary in the range 0.04–1.58 emu/g (i.e. 0.0012–0.046 μB/unit cell with increasing film thickness showing the highest MS value for the 170 nm thick film. Above this thickness MS is found to decrease and eventually above 420 nm the films show a paramagnetic behaviour followed by the well known diamagnetic property for the bulk (>500 nm. It is obvious that since initially the MS values increase with thickness, there has to be a maximum before the films become diamagnetic at some finite thickness. We also note that the MS values observed for MgO are the highest (more than twice the value observed for ZnO to be reported for such a defect induced ferromagnetism in a pristine oxide. The origin of ferromagnetic order in both the oxides appears to arise from the respective cat-ion vacancies. The discovery of film thickness dependent ferromagnetic order should be very useful in developing multifunctional devices based on the technologically important materials MgO and ZnO.

  14. Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yurchuk, Ekaterina, E-mail: ekaterina.yurchuk@namlab.com [Namlab gGmbH, Noethnitzer Strasse 64, 01187 Dresden (Germany); Müller, Johannes [Fraunhofer Center for Nanoelectronic-Technologies, Koenigsbruecker Strasse 180, 01099 Dresden (Germany); Knebel, Steve [Namlab gGmbH, Noethnitzer Strasse 64, 01187 Dresden (Germany); Sundqvist, Jonas [Fraunhofer Center for Nanoelectronic-Technologies, Koenigsbruecker Strasse 180, 01099 Dresden (Germany); Graham, Andrew P.; Melde, Thomas; Schröder, Uwe [Namlab gGmbH, Noethnitzer Strasse 64, 01187 Dresden (Germany); Mikolajick, Thomas [Namlab gGmbH, Noethnitzer Strasse 64, 01187 Dresden (Germany); Chair of Nanoelectronic Materials, Technische Universität Dresden, Noethnitzer Strasse 64, 01187 Dresden (Germany)

    2013-04-30

    The ferroelectric behaviour of silicon doped hafnium oxide has been investigated using metal–insulator–metal capacitor structures for film thicknesses of 9 and 27 nm, annealing temperatures between 450 and 1000 °C and silicon contents from 0 to 8.5 cat%. For the 9 nm thick films, an improvement of the ferroelectric remanent polarization was revealed for decreasing silicon content and increasing annealing temperature, which corresponds well with the HfO{sub 2} structural phases observed by x-ray diffraction. An increase of the film thickness up to 27 nm induced an apparent decrease of the remanent polarization and modified the temperature dependence. This change in the ferroelectric properties was shown to be determined by the different crystallization behaviour of the thick films with respect to the thin films. - Highlights: ► We investigated the ferroelectric behaviour of Si-doped HfO{sub 2} layers. ► The effects of film thickness, Si-content and annealing conditions were examined. ► Increasing Si content induced reduction of the remanent polarization (Pr). ► A significant decrease of Pr was detected with increasing film thickness. ► Crystallization under mechanical confinement was shown to be essential.

  15. Miniaturized, Planar Ion-selective Electrodes Fabricated by Means of Thick-film Technology

    Directory of Open Access Journals (Sweden)

    Robert Koncki

    2006-04-01

    Full Text Available Various planar technologies are employed for developing solid-state sensorshaving low cost, small size and high reproducibility; thin- and thick-film technologies aremost suitable for such productions. Screen-printing is especially suitable due to itssimplicity, low-cost, high reproducibility and efficiency in large-scale production. Thistechnology enables the deposition of a thick layer and allows precise pattern control.Moreover, this is a highly economic technology, saving large amounts of the used inks. Inthe course of repetitions of the film-deposition procedure there is no waste of material dueto additivity of this thick-film technology. Finally, the thick films can be easily and quicklydeposited on inexpensive substrates. In this contribution, thick-film ion-selective electrodesbased on ionophores as well as crystalline ion-selective materials dedicated forpotentiometric measurements are demonstrated. Analytical parameters of these sensors arecomparable with those reported for conventional potentiometric electrodes. All mentionedthick-film strip electrodes have been totally fabricated in only one, fully automated thick-film technology, without any additional manual, chemical or electrochemical steps. In allcases simple, inexpensive, commercially available materials, i.e. flexible, plastic substratesand easily cured polymer-based pastes were used.

  16. Impressive electromagnetic shielding effects exhibited by highly ordered, micrometer thick polyaniline films

    Science.gov (United States)

    Mohan, Ranjini R.; Varma, Sreekanth J.; Sankaran, Jayalekshmi

    2016-04-01

    The present work highlights the remarkably high shielding effectiveness of about 68 dB, exhibited by highly ordered and doped polyaniline films, in the microwave frequency range 4-12 GHz, obtained by self-stabilized dispersion polymerization as the synthesis route. The observed shielding effectiveness is found to depend quite sensitively on the electrical conducting properties, which are predominantly controlled by the nature and concentration of the dopants. The structural and morphological characterization of the films using XRD and TEM techniques reveals surprisingly high extent of crystallinity, which contributes significantly towards enhancing the electrical conductivity of the films. Most of the available reports on the microwave response of conducting polymer film samples deal with much thicker films, compared to the micrometer thick films of the present studies. The shielding effectiveness of acid doped, micrometer thick polyaniline films reported in the present work far exceeds most of the previously reported values and meets the commercial requirements.

  17. Low-voltage pulse exciting electron emission from ferroelectric copolymer film cathode: Role of film thickness and emission stability

    International Nuclear Information System (INIS)

    Ferroelectric copolymer thin films P(VDF-TrFE) are used as a ferroelectric cathode for investigation of their electron emission properties. This ferroelectric copolymer films with different thicknesses are deposited by spin-coating method, and then the annealing process is carried out to improve the crystallinities of as-deposited copolymer films. The measurement results of ferroelectric electron emission showed that the copolymer P(VDF-TrFE) films had a desired ferroelectric electron emission ability excited at low-voltage pulse, and its peak emission current can reach to be ∼1.3 μA when the pulse voltage is 280 V. In addition, the effect of film thickness on electron emission property and emission stability of copolymer thin film P(VDF-TrFE) are discussed.

  18. Effect of thickness on structural and electrical properties of Al-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Arce, R.D.; Schmidt, J.A. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2015-01-01

    In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknessesFilm thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness.

  19. Improvement of Film Thickness Uniformity in TFA-MOD Coated Conductors

    Science.gov (United States)

    Katayama, K.; Nakahata, K.; Yoshizumi, M.; Izumi, T.; Shiohara, Y.

    TFA-MOD process is expected to be promising for future applications since it can produce high performance YBCO coated conductors with low cost. The dip-coating is adopted as the coating process because of its simplicity and controllability of the overall film thickness. Dip-coated films have uniform thickness along longitudinal direction, but not necessary in transverse direction. In the case of thicker films, the more cracks form during processing at the thicker region near the edges generate and propagate mainly due to tensile and bending strain. So we have to suppress the thickness distribution in transverse direction for thicker films for high IC values. In this study, we found that the thickness distribution was firstly given by meniscus shape and then the solution flew down till it's dried. The solution in the center region drops more since it is slowly dried compared with the edge region. Then, we developed a drying process, which accelerates the drying by blowing hot gas to prevent the coated solutions from dropping. As a result, the thickness uniformity was improved; the thickness ratio of the thick region (edge) to the flat one (center) was improved from 1.35 to 1.07. Furthermore, we successfully produced ~1.5 μm thick films with high critical current density values (> 2MA/cm2) by the new coating process including the force drying step.

  20. Systematic experimental study of pure shear type dielectric elastomer membranes with different electrode and film thicknesses

    Science.gov (United States)

    Hodgins, M.; Seelecke, S.

    2016-09-01

    An approach to reduce the voltage required for dielectric elastomer actuators is to reduce film thickness. However, if the electrode thickness is not similarly reduced, the electrode’s mechanical behavior can increasingly and negatively impact the overall actuator behavior. This effect is yet to be studied and quantified for pure shear type specimens; a type recommended in a recent DE standardization journal publication. Therefore, in this work, using pure shear specimens, a comparative study of membrane actuators of different film thickness (20, 50 and 100 μm) is performed. Electrodes of different thicknesses are screen printed and tested in a uniaxial test device. The stiffening effect due to the solid-state electrodes is demonstrated by performing force-elongation tests for specimens with and without electrodes. Additionally the importance of thin electrodes (relative to film thickness) was demonstrated through a number of electromechanical tests. Isotonic tests revealed a lower electro-mechanical sensitivity for the 20 μm film when compared with the 50 and 100 μm films. This was attributed to the relatively thick electrodes. Best actuation results were achieved when the total electrode thickness was at least 15x thinner than the dielectric membrane thickness.

  1. Amorphous Indium Selenide Thin Films Prepared by RF Sputtering: Thickness-Induced Characteristics.

    Science.gov (United States)

    Han, Myoung Yoo; Park, Yong Seob; Kim, Nam-Hoon

    2016-05-01

    The influence of indium composition, controlled by changing the film thickness, on the optical and electrical properties of amorphous indium selenide thin films was studied for the application of these materials as Cd-free buffer layers in CI(G)S solar cells. Indium selenide thin films were prepared using RF magnetron sputtering method. The indium composition of the amorphous indium selenide thin films was varied from 94.56 to 49.72 at% by increasing the film thickness from 30 to 70 nm. With a decrease in film thickness, the optical transmittance increased from 87.63% to 96.03% and Eg decreased from 3.048 to 2.875 eV. Carrier concentration and resistivity showed excellent values of ≥1015 cm(-3) and ≤ 10(4) Ω x cm, respectively. The conductivity type of the amorphous indium selenide thin films could be controlled by changing the film-thickness-induced amount of In. These results indicate the possibility of tuning the properties of amorphous indium selenide thin films by changing their composition for use as an alternate buffer layer material in CI(G)S solar cells.

  2. Thickness dependence of Jc (0) in MgB2 films

    Science.gov (United States)

    Chen, Yiling; Yang, Can; Jia, Chunyan; Feng, Qingrong; Gan, Zizhao

    2016-06-01

    MgB2 superconducting films, whose thicknesses range from 10 nm to 8 μm, have been fabricated on SiC substrates by hybrid physical-chemical vapor deposition (HPCVD) method. It is the first time that the Tc and the Jc of MgB2 films are studied on such a large scale. It is found that with the increasing of thickness, Tc elevates first and then keeps roughly stable except for some slight fluctuations, while Jc (5 K, 0 T) experiences a sharp increase followed by a relatively slow fall. The maximum Jc (5 K, 0 T) = 2.3 × 108 A cm-2 is obtained for 100 nm films, which is the experimental evidence for preparing high-quality MgB2 films by HPCVD method. Thus, this work may provide guidance on choosing the suitable thickness for applications. Meanwhile, the films prepared by us cover ultrathin films, thin films and thick films, so the study on them will bring a comprehensive understanding of MgB2 films.

  3. Wear of CVD thick film diamond cutter while machining laminated flooring

    Institute of Scientific and Technical Information of China (English)

    BAI Qing-shun; YAO Ying-xue; ZHANG Hong-zhi; Phillip BEX; ZHANG Grace

    2006-01-01

    The wide application of high pressure laminated (HPL) flooring has an insistent need for cutting tools with an excellent performance and fine cutting quality. Chemical vapor deposition (CVD) thick film diamond is a promising material for the machining of HPL flooring. In the present work, CVD thick film diamond tools were used to mill the wear resistance layer of HPL flooring. Wear volumes of flank face were examined by optical microscopy, and micro wear morphologies were observed by scanning electron microscopy (SEM). The experiments revealed that the predominant wear characteristics of CVD diamond tools were transgranular cleavage wear and intergranular peeling of the CVD diamond. Experimental results also showed that twin characteristic, cavity defect, micro crack and grain size of CVD thick film diamond contributed greatly to the wear process of CVD thick film diamond tools. The effects caused by the factors were also analyzed in detail in the paper.

  4. Approaches to improving critical current density of YBCO superconducting thick films deposited by electrophoresis

    Institute of Scientific and Technical Information of China (English)

    ZHU Yabin; JIAO Yulei; ZHENG Minghui; ZHOU Yueliang; LIU Zhen; WANG Shufang; CHEN Zhenghao; L(U) Huibin; YANG Guozhen; XlAO Ling; REN Hongtao

    2004-01-01

    Fabrication of YBCO superconducting thick films by electrophoresis has been widely reported. However, the value of critical current density (Jc) is far from what the practical application requires. The superconducting thick films are obtained using top-seeded melt growth method with different proportional Y2BaCuO5 (Y211) addition.High-pressure oxygen has been used in the annealing process to improve the uniformity of the oxygen content in the superconducting thick films.When 40mol% Y211 powder is added to the YBa2Cu3O7-δ (Y123) powder, Jc for the superconducting thick film by approaches described above reaches 7.008x103 A/cm2 (77 K, 0 T), which is greater than the value ever reported.

  5. Determination of Thickness of an Inaccessible Thin Film under a Multilayered System from Natural Frequencies

    Institute of Scientific and Technical Information of China (English)

    ZHOU Chang-Zhi; LI Ming-Xuan; MAO Jie; WANG Xiao-Min

    2008-01-01

    @@ We investigate the relationship between natural frequencies of a multilayered system of different elastic materials and the thickness of the undermost thin film. The natural frequencies are numerically calculated from the reflection coefficient of a sample system of "steel-epoxy resin-aluminium-thin polymer' with normal incidence.Strain energy ratio is defined and calculated to give the physics explanation why some frequencies are sensitive to thickness of the thin film in certain range. Experiments of three specimens indicate that the measured natural frequencies agree well with the theoretical ones. It is found in our experiments that the ratio of the lowest film thickness to wavelength is about 1/5. The average relative errors for the inverted polymer film thicknesses are found to be 11.8%, -4.8% and -1.3%, respectively.

  6. Microscopic image processing system for measuring nonuniform film thickness profiles: Image scanning ellipsometry

    International Nuclear Information System (INIS)

    The long-term objective of this research program is to determine the stability and heat transfer characteristics of evaporating thin films. The current objective is to develop and use a microscopic image-processing system (IPS) which has two parts: an image analyzing interferometer (IAI) and an image scanning ellipsometer (ISE). The primary purpose of this paper is to present the basic concept of ISE, which is a novel technique to measure the two dimensional thickness profile of a non-uniform, thin film, from several nm up to several μm, in a steady state as well as in a transient state. It is a full-field imaging technique which can study every point on the surface simultaneously with high spatial resolution and thickness sensitivity, i.e., it can measure and map the 2-D film thickness profile. The ISE was tested by measuring the thickness profile and the refractive index of a nonuniform solid film

  7. Influence of film thickness and In-doping on physical properties of CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Butt, Sajid, E-mail: sajidarif@hotmail.com [Department of Materials Science and Engineering, Institute of Space Technology (IST), Islamabad 44000 (Pakistan); Thermal Transport Laboratory, School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad (Pakistan); Shah, Nazar Abbas [Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Nazir, Adnan [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Ali, Zulfiqar [Optics Laboratories, P. O. Box 1021, Islamabad (Pakistan); Maqsood, Asghri [CESET, Center for Emerging Sciences, Engineering and Technology, Islamabad (Pakistan)

    2014-02-25

    Highlights: • Fabrication of polycrystalline CdS thin films by Close Spaced Sublimation technique. • The direct band gap of 2.44 eV and the electrical resistivity in the order of 10{sup 6}–10{sup 8} Ω cm was measured. • Resistivity was reduced to the order of 10{sup –2}–10{sup 1} Ω m by the thermally diffusion of indium into CdS films. -- Abstract: Polycrystalline CdS thin films were deposited on glass substrates by close spaced sublimation technique. Samples of various thicknesses, ranging from 250 to 940 nm were obtained. The optical and electrical properties of pure CdS thin films were studied as a function of film thickness. The resistivity of as-deposited CdS films was in the order of 10{sup 6}–10{sup 8} Ω cm, depending upon the film thickness. In the high temperature region, carriers are transported over the grain boundaries by thermionic emission. Resistivity was reduced to the order of 10{sup −2}–10{sup 1} Ω cm by the thermally diffusion of indium into CdS films, without changing the type of carriers. The annealing temperature dependence of structural, optical and electrical properties of In-doped CdS films showed that the samples annealed at 350 °C and 400 °C exhibited better results.

  8. Thickness dependence of the magnetic properties of ripple-patterned Fe/MgO(001) films

    Science.gov (United States)

    Büttner, Felix; Zhang, Kun; Seyffarth, Susanne; Liese, Tobias; Krebs, Hans-Ulrich; Vaz, C. A. F.; Hofsäss, Hans

    2011-08-01

    Grazing incidence Xe+ ion sputtering was used to create a nanoscale ripple pattern on a thin Fe film, epitaxially grown on MgO(001). The Fe film has a thickness gradient of 0-20 nm and a ripple height of about 3 nm, giving rise to a transition from a continuous film to separated nanorods with decreasing film thickness. This allowed the investigation of the competition between the uniaxial and biaxial anisotropy of the irradiated sample as a function of thickness. From magneto-optical Kerr effect measurements, we determine accurately the cubic magnetocrystalline anisotropy and the uniaxial anisotropy that originates from the ripple pattern using a coherent rotation model. Our results show that the uniaxial anisotropy strength increases, whereas the contribution of the biaxial crystal anisotropy decreases, when going from the continuous film to the nanorod structures.

  9. Structural, transport and microwave properties of 123/sapphire films: Thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

    1994-12-31

    The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

  10. Effects of chromophore concentration and film thickness on thermo-optic properties of electro-optic fluorinated polyimide films

    Institute of Scientific and Technical Information of China (English)

    Hongxiang Song; Chengxun Wu

    2007-01-01

    Electro-optic (EO) effect and thermo-optic (TO) effect are jointly considered on the basis of field-induced and temperature-affected perturbations of the operating point in waveguide components. TO coefficients of EO fluorinated polyimide films with side-chain azobenzene chromophore were measured by attenuatedtotal-reflection (ATR) technique at different temperatures with TE- and TM-polarized lights, respectively.It is found that the absolute values of TO coefficients increase with the increments of both chromophore concentration and film thickness, but the polarization dependence of TO coefficients increases with the increment of chromophore concentration and decreases with the increment of film thickness.

  11. Thickness effect on magnetocrystalline anisotropy of Co/Pd(111) films: A density functional study

    Science.gov (United States)

    Jekal, Soyoung; Rhim, S. H.; Kwon, Oryong; Hong, Soon Cheol

    2015-05-01

    In this study, we carried out first-principles calculations on magnetocrystalline anisotropy (MCA) of Co/Pd thin films by adopting two different systems of (i) n-Co/3-Pd and (ii) n-Pd/3-Co. In one system, we vary the thickness of Co layer, fixing the thickness of the Pd layer to 3-monolayers, and in the other system vice versa. MCA is mainly governed by the surface and interface Co atoms, while contributions from other Co atoms are smaller. MCA energy (EMCA) of the Co/Pd thin film shows oscillatory behavior with the thickness of the Co layer, but is insensitive to the thickness of the Pd layer. In particular, the n-Co/3-Pd films of n = 2, 4, and 6 exhibit strong perpendicular MCA of about 1 meV. Our results suggest that controlling the thickness of the Co layer in Co/Pd (111) is crucial in achieving strong perpendicular MCA.

  12. Investigation of thickness effects on the dielectric constant barium strontium titanate thin films

    CERN Document Server

    Grattan, L J

    2002-01-01

    The collapse in dielectric constant at small thickness commonly observed in ferroelectric thin films was measured and investigated in barium strontium titanate (Ba sub 0 sub . sub 5 Sr sub 0 sub . sub 5 TiO sub 3). The possible mechanisms responsible for this effect are reviewed. Functional measurements were performed on BST thin films, of 7.5 to 950 nm, by incorporating them into capacitor structures with bottom electrodes of strontium ruthenate (SRO) and thermally- evaporated Au top electrodes. A discussion on thin film growth considerations, optimal PLD conditions and the measurement techniques employed in the project is presented. The experimentally determined dielectric constant - thickness profile was fitted using the series capacitor model assuming low dielectric constant interfacial layers in series with the bulk. Consideration of the case where the combined 'dead layer' thickness was close to the total BST thickness revealed that, for this system, the total 'dead layer' thickness had to be less than ...

  13. An experimental analysis of thick-film solid-state reference electrodes

    OpenAIRE

    Sophocleous, Marios; Glanc-Gostkiewicz, Monika; Atkinson, John Karl; Garcia-Breijo, Eduardo

    2012-01-01

    Thick-Film planar solid-state Silver/Silver Chloride (Ag/AgCl) reference electrodes were developed and tested for ion susceptibility and long term drift in approximately 0.04 M potassium chloride (KCl) solution. Various types of electrodes were tested exhibiting stabilities down to 2 millivolts per decade change of chloride concentration. It is demonstrated that Thick-Film reference electrodes are suitable for use in underground soil measurements due to their ruggedness and robustness.

  14. Formulation, development, and characterization of magnetic pastes and epoxies for thick film inductors

    OpenAIRE

    Kashani, Mohammad Mansour Riahi

    1992-01-01

    Inductors and transformers constitute two important magnetic components In RF and power hybrids electronic circuitry. Thick film inductors have been subject of extensive research in recent years because they significantly reduce the weight and size, and increase the frequency of operation of electronic circuits. The research work in this dissertation is aimed at the formulation of thick film ferrite pastes and ferrite epoxies and the design, construction, and evaluation of thic...

  15. Operating limits for acoustic measurement of rolling bearing oil film thickness

    OpenAIRE

    Dwyer-Joyce, R.S.; Reddyhoff, T.; Drinkwater, B.

    2004-01-01

    An ultrasonic pulse striking a thin layer of liquid trapped between solid bodies will be partially reflected. The proportion reflected is a function of the layer stiffness, which in turn depends on the film thickness and its bulk modulus. In this work, measurements of reflection have been used to determine the thickness of oil films in elastohydrodynamic lubricated (EHL) contacts. A very thin liquid layer behaves like a spring when struck by an ultrasonic pulse. A simple quasi-static spring m...

  16. Operating Limits for Acoustic Measurement of Rolling Bearing Oil Film Thickness

    OpenAIRE

    Dwyer-Joyce, R.S.; Reddyhoff, T.; Drinkwater, B.

    2004-01-01

    An ultrasonic pulse striking a thin layer of liquid trapped between solid bodies will be partially reflected. The proportion reflected is a function of the layer stiffness, which in turn depends on the film thickness and its bulk modulus. In this work, measurements of reflection have been used to determine the thickness of oil films in elastohydrodynamic lubricated (EHL) contacts. A very thin liquid layer behaves like a spring when struck by an ultrasonic pulse. A simple quasi-static spring m...

  17. Enhancing critical current in YBCO thick films: Substrate decoration and quasi-superlattice approach

    Science.gov (United States)

    Sarkar, A.; Mikheenko, P.; Dang, V. S.; Abell, J. S.; Crisan, A.

    2009-10-01

    For power applications of superconducting films, the critical current density ( J c) and the thickness of the film ( d) should be as high as possible. Since J c decreases with both thickness and magnetic field, artificial pinning centres in addition to natural ones are required to keep J c high. The earliest cost-effective method used for introducing artificial pinning centres was the so-called substrate decoration, i.e., growing nano-scale islands (nano-dots) of certain materials on the substrate prior to the deposition of the superconducting thin film. Later on another version of this approach proved to be successful: building up a layered distribution of a second phase using a multilayer deposition (quasi-superlattices). Several materials have been used for the creation of artificial pinning centres. Here we report on the artificial pinning centres induced in YBCO thick films by substrate decoration and quasi-superlattice approaches using nano-dots of Pd and non-superconducting YBCO. The cross-sectional AFM images show evidence of c-axis correlated columnar defects. These defects significantly contribute to the pinning of magnetic flux and increase critical current in the films. We observed an important shift of the position of the maximum in the thickness dependence of J c( B) towards higher thicknesses compared with pure YBCO films by both approaches. A high J c( B) in our quite thick films provides a very high total critical current per cm of the film width. Critical current as high as 800 A/cm width was achieved in a 2.4 μm thick quasi-superlattice film with non-superconducting YBCO nano-dots.

  18. Thickness Effect on Properties of Sprayed In2S3 Films for Photovoltaic Applications

    Science.gov (United States)

    Bouguila, N.; Kraini, M.; Halidou, I.; Lacaze, E.; Bouchriha, H.; Bouzouita, H.

    2016-01-01

    Indium sulfide (In2S3) films have been deposited on soda-lime glass substrates using a spray technique (CSP). Indium chloride and thiourea were used as precursors at a molar ratio of S:In = 2. The substrate temperature was fixed at 340°C. The effect of film thickness on the structural, morphological and optical properties of the as-deposited films has been studied. These films were characterized by x-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM) and optical absorption spectroscopy. As-prepared samples were polycrystalline with a cubic structure and (400) as preferential orientation. Their grain size increased from 35 nm to 41 nm with increasing thickness whereas the dislocation density and microstrain of the films decreased with the increase of thickness. Both SEM and AFM images showed that the films were homogenous with an increase of the surface roughness with the increase of thickness. The optical transmittance of the films decreased from 80% to 20% in the visible and infrared regions when the thickness was increased from 0.78 μm to 6.09 μm. The optical band gap E g was found to be in the range of 2.75-2.19 eV and showed a decrease with film thickness. Based on the measured optical constants (n and k), a Wemple-Didomenico model was used to determine the values of single oscillator energy ( E 0), dispersion energy ( E d), optical band gap ( E g) and high frequency dielectric constant ( \\varepsilon_{∞} ). In addition, these films exhibited n-type conductivity and were highly resistive. These results confirm that In2S3 thin films are a promising alternative as a buffer-layer material for CuInGa(S,Se)2-based solar cells.

  19. The effect of film thickness on critical properties of YBCO film fabricated by TFA-MOD using 211-process

    International Nuclear Information System (INIS)

    YBCO films were fabricated by the TFA-MOD method using the '211-process', and the effects of the film thickness on phase formation, microstructure, texture evolution, and critical properties were evaluated. Various film thicknesses ranging from 0.41 μm to 2.14 μm were obtained by repeating the dip coating and calcining processes one to five times. The critical properties varied significantly with the film thickness. The Ic increased from 35 to 105 A/cm-width with increasing the film thickness from 0.41 μm to 1.17 μm. On the other hand, the corresponding Jc remained almost constant in the range of 0.76-0.90 MA/cm2. With further increases in thickness, these values decreased drastically, which was attributed to the degraded microstructure, i.e., the formation of BaF2 and a-axis grains and degraded texture and surface morphology arising from the insufficient heat treatment time. It is believed that the optimum thickness for improving both the Ic and Jc values is approximately 1.17 μm

  20. Thickness-dependent dielectric properties of nanoscale Pt/(Pb,Ba)ZrO 3/BaPbO 3 capacitors

    Science.gov (United States)

    Wu, Lin-Jung; Wu, Jenn-Ming

    2007-10-01

    Lead barium zirconate (PBZ) thin films on BaPbO 3(BPO)/Pt/Ti/SiO 2/Si substrates have been prepared by rf-magnetron sputtering at 500 °C. The orientation of PBZ film changes from random to (1 1 1)-prefer oriented when the thickness increases. The grain size increases with increasing PBZ thickness. The dielectric properties are greatly suppressed when the thickness of dielectrics decreases. The dielectric constant and tunability decrease from 536% and 49.1% to 205% and 22.7%, respectively, when the thickness of PBZ decreases from 323 to 62 nm. The origins of the collapsed dielectric behavior are discussed. The variation of dielectric properties with film thickness can be interpreted by (a) antiferroelectric layer at PBZ/BPO interface, (b) dead layer at Pt/PBZ interface, and (c) grain boundary dead layers.

  1. Thickness and microstructure effects in the optical and electrical properties of silver thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel; Le, Minh [Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 (United States)

    2015-11-15

    The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

  2. Thickness dependence of magnetic properties in La–Co substituted strontium hexaferrite films with perpendicular anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Hui, Yajuan [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Cheng, Weiming, E-mail: wmcheng@mail.hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Yan, Peng [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Chen, Jincai [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Miao, Xiangshui [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-09-15

    The thickness dependence of magnetization reversal and coercivity behavior for La–Co substituted strontium hexaferrite (Sr-M) films was investigated. It is found that perpendicular anisotropy appears only when film thickness (t) is above 110 nm. With increasing t, perpendicular anisotropy energy (K{sub u⊥}) increases gradually to its maximum of 1.76×10{sup 6} erg/cm{sup 3} at t=300 nm, but turns to decrease when t>300 nm. Moreover, when t>110 nm, those films exhibit domains pinning or Stoner–Wohlfarth reversal model, present large K{sub u⊥} values and a rapid increase in H{sub c⊥}. However, while t≤110 nm, Sr-M films show nucleation model of magnetization reversal and perform low coercivity. The origin of the coercivity varying with thickness should be correlated with the grain size and preferred orientations in Sr-M films. - Highlights: • Thickness dependence in submicro-scale bulk system is investigated for La–Sr–Co–Fe–O films. • (0 0 1) preferred orientation gradually increases until t=300 nm and then declines. • The magnetization reversal presents different models with thickness. • Perpendicular anisotropy energy increases to maximum value of 1.76×10{sup 6} erg/cm{sup 3} at t=300 nm. • The coercivity varying with thickness is correlated with the grain size and preferred orientation.

  3. Temperature- and thickness-dependent elastic moduli of polymer thin films

    Directory of Open Access Journals (Sweden)

    Ao Zhimin

    2011-01-01

    Full Text Available Abstract The mechanical properties of polymer ultrathin films are usually different from those of their counterparts in bulk. Understanding the effect of thickness on the mechanical properties of these films is crucial for their applications. However, it is a great challenge to measure their elastic modulus experimentally with in situ heating. In this study, a thermodynamic model for temperature- (T and thickness (h-dependent elastic moduli of polymer thin films Ef(T,h is developed with verification by the reported experimental data on polystyrene (PS thin films. For the PS thin films on a passivated substrate, Ef(T,h decreases with the decreasing film thickness, when h is less than 60 nm at ambient temperature. However, the onset thickness (h*, at which thickness Ef(T,h deviates from the bulk value, can be modulated by T. h* becomes larger at higher T because of the depression of the quenching depth, which determines the thickness of the surface layer δ.

  4. Preparation and Characterization of PZT Piezoelectric Thick Film Generation Materials Enhanced by PZT Nanoparticles

    Institute of Scientific and Technical Information of China (English)

    Duan Zhongxia; Xu Ju; Liu Junbiao

    2015-01-01

    The use of piezoelectric materials to capitalize on the ambient vibrations surrounding a system is one method that has seen a dramatic rise in use for power harvesting .Lead zirconate titanate ,one of the most popular piezoelectric materials ,has larger piezoelectric response than piezoelectric materials ,such as ZnO and AlN .Ferro-electric films are suitable for vibration energy harvesting .Dense and crack-free (100) oriented PZT piezoelectric thick film is prepared on Pt/Cr/SiO2/Si substrate by sol-gel using PZT nanoparticles as reinforcing phase .The thick film possesses single-phase perovskite structure and perfectly (100) oriented .The influences of crystalline and amorphous PZT nanoparticles on the (100) oriented degree and the influences of the molar concentration ratio of amorphous PZT nanoparticles and PZT sol on surface morphology of PZT piezoelectric thick film are investiga-ted .Experimental results show that ,amorphous PZT nanoparticles are more helpful than the crystalline nanoparti-cles for the PZT thick film preferred orientation growth along the (100) direction .The 3 μm-thick PZT thick film enhanced by amorphous PZT nanoparticles annealed at 700 ℃ for 5 min has the strongest (100) orientation degree , being 82 .3% ,and the surface is dense ,smooth and crack-free .

  5. Effects of film thickness and Sn concentration on electrical properties of solution-processed zinc tin oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, CheolGyu; Lee, Nam-Hyun; Kwon, Young-Kyu; Kang, Bongkoo, E-mail: bkkang@postech.ac.kr

    2013-10-01

    This paper investigates the effect of Sn concentration and film thickness on properties of zinc tin oxide (ZTO) thin film transistors (TFTs) fabricated using a solution process. ZTO solution was synthesized using zinc acetate dehydrate and tin chloride dehydrate dissolved in a solvent composed of 2-methoxyethanol and mono-ethanolamine. A ZTO film was obtained for an active channel on a gate oxide layer by spin-coating the solution at room temperature, drying at 300 °C for 10 min, and annealing at 550 °C for 120 min. The thickness and Sn concentration affected the material structure and electrical properties of ZTO film. The best solution processed ZTO TFT was obtained at film thickness of 35 nm and Sn concentration of 30 at.%. The fabricated ZTO TFT exhibited an on/off ratio of 1.88 × 10{sup 7}, a field effect mobility of 17.02 cm{sup 2}/Vs, a subthreshold swing of 0.77 V/decade, and a threshold voltage of 5.01 V. - Highlights: • Good solution-based zinc tin oxide (ZTO) thin film transistors were fabricated. • The ZTO film should have ∼ 30 at.% Sn and 35–54 nm thickness. • The fabricated devices had an on/off ratio of 1.88 × 10{sup 7} and mobility of 17.02 cm{sup 2}/Vs.

  6. Effects of film thickness and Sn concentration on electrical properties of solution-processed zinc tin oxide thin film transistors

    International Nuclear Information System (INIS)

    This paper investigates the effect of Sn concentration and film thickness on properties of zinc tin oxide (ZTO) thin film transistors (TFTs) fabricated using a solution process. ZTO solution was synthesized using zinc acetate dehydrate and tin chloride dehydrate dissolved in a solvent composed of 2-methoxyethanol and mono-ethanolamine. A ZTO film was obtained for an active channel on a gate oxide layer by spin-coating the solution at room temperature, drying at 300 °C for 10 min, and annealing at 550 °C for 120 min. The thickness and Sn concentration affected the material structure and electrical properties of ZTO film. The best solution processed ZTO TFT was obtained at film thickness of 35 nm and Sn concentration of 30 at.%. The fabricated ZTO TFT exhibited an on/off ratio of 1.88 × 107, a field effect mobility of 17.02 cm2/Vs, a subthreshold swing of 0.77 V/decade, and a threshold voltage of 5.01 V. - Highlights: • Good solution-based zinc tin oxide (ZTO) thin film transistors were fabricated. • The ZTO film should have ∼ 30 at.% Sn and 35–54 nm thickness. • The fabricated devices had an on/off ratio of 1.88 × 107 and mobility of 17.02 cm2/Vs

  7. Gas sensing properties of Cu and Cr activated BST thick films

    Indian Academy of Sciences (India)

    G H Jain; L A Patil

    2006-08-01

    H2S gas sensing properties of BST ((Ba0.67Sr0.33)TiO3) thick films are reported here for the first time. BST ceramic powder was prepared by mechanochemical process. Thick films of BST were prepared by screen-printing technique. The sensing performance of the films was tested for various gases. The films were surface customized by dipping them into aqueous solutions of CuCl2 and CrO3 for various intervals of time. These surface modified BST films showed improved sensitivity to H2S gas (100 ppm) than pure BST film. Chromium oxide was observed to be a better activator than copper oxide in H2S gas sensing. The effect of microstructure and amount of activators on H2S gas sensing were discussed. The sensitivity, selectivity, stability, response and recovery time of the sensor were measured and presented.

  8. Screen printed PZT/PZT thick film bimorph MEMS cantilever device for vibration energy harvesting

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian;

    2012-01-01

    elements. We show experimental results from two types PZT/PZT harvesting devices, one where the Pb(ZrxTi1−x)O3 (PZT) thick films are high pressure treated during the fabrication and the other where the treatment is omitted. We find that with the high pressure treatment prior to PZT sintering, the films...

  9. Thickness dependent wetting properties and surface free energy of HfO2 thin films

    Science.gov (United States)

    Zenkin, Sergei; Belosludtsev, Alexandr; Kos, Šimon; Čerstvý, Radomír; Haviar, Stanislav; Netrvalová, Marie

    2016-06-01

    We show here that intrinsic hydrophobicity of HfO2 thin films can be easily tuned by the variation of film thickness. We used the reactive high-power impulse magnetron sputtering for preparation of high-quality HfO2 films with smooth topography and well-controlled thickness. Results show a strong dependence of wetting properties on the thickness of the film in the range of 50-250 nm due to the dominance of the electrostatic Lifshitz-van der Waals component of the surface free energy. We have found the water droplet contact angle ranging from ≈120° for the thickness of 50 nm to ≈100° for the thickness of 2300 nm. At the same time the surface free energy grows from ≈25 mJ/m2 for the thickness of 50 nm to ≈33 mJ/m2 for the thickness of 2300 nm. We propose two explanations for the observed thickness dependence of the wetting properties: influence of the non-dominant texture and/or non-monotonic size dependence of the particle surface energy.

  10. Spacer Thickness-Dependent Electron Transport Performance of Titanium Dioxide Thick Film for Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Reda E. El-Shater

    2015-01-01

    Full Text Available A titanium dioxide (P25 film was deposited by cast coating as conductive photoelectrode and subsequently immersed in dye solution (N719 to fabricate the photoanode of dye-sensitized solar cells (DSSCs. A plastic spacer was used as a separation and sealant layer between the photoanode and the counter electrode. The effect of the thickness of this spacer on the transfer of electrons in the liquid electrolyte of the DSSCs was studied by means of both IV curves and electrochemical impedance. Using a spacer thickness range of 20 μm to 50 μm, efficiency ranges from 3.73% to 7.22%. The highest efficiency of 7.22% was obtained with an optimal spacer thickness of 40 μm.

  11. Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of ultrathin block copolymer films.

    Science.gov (United States)

    Huang, Changchun; Wen, Gangyao; Li, Jingdan; Wu, Tao; Wang, Lina; Xue, Feifei; Li, Hongfei; Shi, Tongfei

    2016-09-15

    Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of spin-coated polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) films (annealed for different times were performed using X-ray photoelectron spectroscopy and contact angle measurement. With the annealing of acetone vapor, dewetting of the films with different thicknesses occur via the spinodal dewetting and the nucleation and growth mechanisms, respectively. The PS-b-PMMA films rupture into droplets which first coalesce into large ones to reduce the surface free energy. Then the large droplets rupture into small ones to increase the contact area between PMMA blocks and acetone molecules resulting from ultimate migration of PMMA blocks to droplet surface, which is a novel dewetting process observed in spin-coated films for the first time. PMID:27309943

  12. Coating of a stainless steel tube-wall catalytic reactor with thermally treated polysiloxane thick films

    OpenAIRE

    Guillou, L.; Supiot, P.; Le Courtois, V.

    2005-01-01

    Organosilicon films were grafted over stainless steel substrates thanks to a plasma assisted chemical vapor deposition process. Thicknesses up to 10μm were developed. The organosilicon films were then thermally treated under air and the influence of calcinations conditions was investigated by infrared spectroscopy, Raman microscopy and XPS. On all films, it appears that the structure varies according to the thermal treatment parameters. Indeed the surface composition appears to be SiO1.8 whic...

  13. Physicochemical controls on absorbed water film thickness in unsaturated geological media

    Energy Technology Data Exchange (ETDEWEB)

    Tokunaga, T.

    2011-06-14

    Adsorbed water films commonly coat mineral surfaces in unsaturated soils and rocks, reducing flow and transport rates. Therefore, it is important to understand how adsorbed film thickness depends on matric potential, surface chemistry, and solution chemistry. Here, the problem of adsorbed water film thickness is examined through combining capillary scaling with the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory. Novel aspects of this analysis include determining capillary influences on film thicknesses, and incorporating solution chemistry-dependent electrostatic potential at air-water interfaces. Capillary analysis of monodisperse packings of spherical grains provided estimated ranges of matric potentials where adsorbed films are stable, and showed that pendular rings within drained porous media retain most of the 'residual' water except under very low matric potentials. Within drained pores, capillary contributions to thinning of adsorbed films on spherical grains are shown to be small, such that DLVO calculations for flat surfaces are suitable approximations. Hamaker constants of common soil minerals were obtained to determine ranges of the dispersion component to matric potential-dependent film thickness. The pressure component associated with electrical double layer forces was estimated using the compression and linear superposition approximations. The pH-dependent electrical double layer pressure component is the dominant contribution to film thicknesses at intermediate values of matric potential, especially in lower ionic strength solutions (< 10 mol m{sup -3}) on surfaces with higher magnitude electrostatic potentials (more negative than - 50 mV). Adsorbed water films are predicted to usually range in thickness from 1 to 20 nm in drained pores and fractures of unsaturated environments.

  14. Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Ohno, Takeo, E-mail: t-ohno@wpi-aimr.tohoku.ac.jp [WPI - Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Japan Science and Technology Agency (JST), PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Samukawa, Seiji, E-mail: samukawa@ifs.tohoku.ac.jp [WPI - Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Institute of Fluid Science (IFS), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)

    2015-04-27

    Resistive switching in a Cu/Ta{sub 2}O{sub 5}/Pt structure that consisted of a few nanometer-thick Ta{sub 2}O{sub 5} film was demonstrated. The Ta{sub 2}O{sub 5} film with thicknesses of 2–5 nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2 V and multilevel switching operation.

  15. Investigation of Top/bottom Electrode and Diffusion Barrier Layer for PZT thick film MEMS Sensors

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Hindrichsen, Christian Carstensen; Lou-Møller, R.;

    2007-01-01

    In this work screen printed piezoelectric Ferroperm PZ26 lead zirconate titanate (PZT) thick film is used for two MEMS devices. A test structure is used to investigate several aspects regarding bottom and top electrodes. 450 nm ZrO2 thin film is found to be an insufficient diffusion barrier layer...... for thick film PZT sintered at 850degC. E-beam evaporated Al and Pt is patterned on PZT with a lift-off process with a line width down to 3 mum. The roughness of the PZT is found to have a strong influence on the conductance of the top electrode....

  16. Thickness distribution of thin amorphous chalcogenide films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Pavlista, Martin; Hrdlicka, Martin; Prikryl, Jan [University of Pardubice, Research Centre Advanced Inorganic Materials, Faculty of Chemical Technology, Pardubice (Czech Republic); Nemec, Petr; Frumar, Miloslav [University of Pardubice, Research Centre Advanced Inorganic Materials, Faculty of Chemical Technology, Pardubice (Czech Republic); University of Pardubice, Department of General and Inorganic Chemistry, Faculty of Chemical Technology, Pardubice (Czech Republic)

    2008-11-15

    Amorphous chalcogenide thin films were prepared from As{sub 2}Se{sub 3}, As{sub 3}Se{sub 2} and InSe bulk glasses by pulsed laser deposition using a KrF excimer laser. Thickness profiles of the films were determined using variable angle spectroscopic ellipsometry. The influence of the laser beam scanning process during the deposition on the thickness distribution of the prepared thin films was evaluated and the corresponding equations suggested. The results were compared with experimental data. (orig.)

  17. Terahertz paintmeter for noncontact monitoring of thickness and drying progress in paint film

    Science.gov (United States)

    Yasui, Takeshi; Yasuda, Takashi; Sawanaka, Ken-Ichi; Araki, Tsutomu

    2005-11-01

    We propose a paintmeter for noncontact and remote monitoring of the thickness and drying progress of a paint film based on the time-of-flight measurement of the echo signal of a terahertz (THz) electromagnetic pulse. The proposed method is effectively applied to two-dimensional mapping of the painting thickness distribution for single-layer and multilayer paint films. Furthermore, adequate parameters for the drying progress are extracted from the THz pulse-echo signal and effectively applied to monitor the wet-to-dry transformation. The THz paintmeter can be a powerful tool for quality control of the paint film on the in-process monitoring of car body painting.

  18. Study of film thickness on fuel rod under high pressure and high temperature steam-water two phase flow

    International Nuclear Information System (INIS)

    The liquid film thickness on the fuel rod is measured by ultrasonic echo technique under high temperature and high pressure steam-water two phase flow. As quality is increased, film thickness is decreased. The film thickness is about 0.2 mm at 9% of quality under 1 MPa. It was found from test data that disturbance wave is not measured clearly and change of film is small. (author)

  19. Investigation of Top/Bottom electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Pedersen, Thomas; Thomsen, Erik Vilain

    2008-01-01

    Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(ZrxTi1 - x)O3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process wi...... with a line width down to 3 μ m. A 700 nm thick ZrO2 layer as insolating diffusion barrier layer is found to be insufficient as barrier layer for PZT on a silicon substrate sintered at 850°C. EDX shows diffusion of Si into the PZT layer....

  20. Optical spectroscopy of sputtered nanometer-thick yttrium iron garnet films

    Energy Technology Data Exchange (ETDEWEB)

    Jakubisova-Liskova, Eva, E-mail: liskova@karlov.mff.cuni.cz; Visnovsky, Stefan [Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 12116 Prague (Czech Republic); Chang, Houchen; Wu, Mingzhong [Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States)

    2015-05-07

    Nanometer (nm)-thick yttrium iron garnet (Y{sub 3}Fe{sub 5}O{sub 12}, YIG) films present interest for spintronics. This work employs spectral ellipsometry and magneto-optic Kerr effect (MOKE) spectra to characterize nm-thick YIG films grown on single-crystal Gd{sub 3}Ga{sub 5}O{sub 12} substrates by magnetron sputtering. The thickness (t) of the films ranges between 10 nm and 40 nm. Independent on t, the polar MOKE hysteresis loops saturate in the field of about 1.8 kOe, consistent with the saturation magnetization in bulk YIG (4πM{sub s} ≈ 1.75 kG). The MOKE spectrum measured at photon energies between 1.3 eV and 4.5 eV on the 38-nm-thick film agrees with that measured on single-crystal YIG bulk materials. The MOKE spectrum of the 12-nm-thick film still preserves the structure of the bulk YIG but its amplitude at lower photon energies is modified due to the fact that the radiation penetration depth exceeds 20 nm. The t dependence of the MOKE amplitude is consistent with MOKE calculations. The results indicate that the films are stoichiometric, strain free, without Fe{sup 2+}, and preserve bulk YIG properties down to t ≈ 10 nm.

  1. Ceramic thick film humidity sensor based on MgTiO3 + LiF

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • The fabricated sensor based on MgTiO3 + LiF materials used the spin coating technology. • The response time is 70 s to detect variation between 5 and 95% relative humidity. • The addition of Scleroglucan controls the viscosity and decreases the roughness of thick film surface. • This humidity sensor is a promising, low-cost, high-quality, reliable ceramic films, that is highly sensitive to humidity. - Abstract: The feasibility of humidity sensor, consisting of a thick layer of MgTiO3/LiF materials on alumina substrate, was studied. The thermal analysis TGA-DTGA and dilatometric analysis worked out to confirm the sintering temperature. An experimental plan was applied to describe the effects of different parameters in the development of the thick film sensor. Structural and microstructural characterizations of the developed thick film were made. Rheological study with different amounts of a thickener (scleroglucan “sclg”), showing the behavior variation, as a function of sclg weight % was illustrated and rapprochement with the results of thickness variation as a function of angular velocity applied in the spin coater. The electrical and dielectric measurements confirmed the sensitivity of the elaborated thick film against moisture, along with low response time

  2. Investigation of magnetic properties in thick CoFeB alloy films for controllable anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ke; Huang, Ya; Chen, Ruofei; Xu, Zhan [Huaqiao University, College of Information Science and Engineering, Xiamen City (China)

    2016-02-15

    CoFeB alloy material has attracted interest for its wide uses in magnetic memory devices and sensors. We investigate magnetic properties of thick Co{sub 40}Fe{sub 40}B{sub 20} films in the thickness range from 10 to 100 nm sandwiched by MgO and Ta layers. Strong in-plane uniaxial magnetic anisotropy is revealed in the as-deposited amorphous films by angular dependent magnetic measurements, and the growth-induced anisotropy is found to strongly depend on the film thickness. A fourfold cubic magnetic anisotropy develops with annealing, as a result of improved crystalline structure in films confirmed by X-ray diffraction measurements. The observed magnetic properties can be explained by the superposition of the uniaxial and additional cubic magnetic anisotropy, tuned by annealing temperature. (orig.)

  3. Thickness dependent fatigue life at microcrack nucleation for metal thin films on flexible substrates

    Science.gov (United States)

    Sun, X. J.; Wang, C. C.; Zhang, J.; Liu, G.; Zhang, G. J.; Ding, X. D.; Zhang, G. P.; Sun, J.

    2008-10-01

    For polymer-supported metal thin films used in flexible electronics, the definition of the fatigue lifetime at microcrack nucleation (FLMN) should be more physically meaningful than all the previous definitions at structural instability. In this paper, the FLMN of Cu films (with thickness from 100 nm to 3.75 µm) as well as Al thin films (from 80 to 800 nm) was experimentally characterized at different strain ranges and different thicknesses by using a simple electrical resistance measurement (ERM). A significant thickness dependence was revealed for the FLMN and a similar Coffin-Manson fatigue relationship observed commonly in bulk materials was found to be still operative in both the films. Microstructural analyses were carried out to verify the feasibility of ERM correspondingly.

  4. Effect of a bell-shaped cover in spin coating process on final film thickness

    Energy Technology Data Exchange (ETDEWEB)

    Pannek, M.; Dunkel, T.; Schubert, D.W. [GKSS Research Centre, Geesthacht (Germany)

    2001-04-01

    Thin polymer films can be prepared by spin coating with thicknesses ranging from nanometers to micrometers. The film thickness is controlled by concentration of the polymer solution, molar mass of the polymer and spinning speed. The patented GYRSET system for spin coating applications provides a fundamental modification. The bell-shaped cover minimizes air turbulences inside the process chamber; therefore, better uniformity of the layer is produced. This leads to highly reproducible results, uniform coverage, and reliable and uniform material application, in particular at lower spin speeds. We focus on the question how does the GYRSET system change the final film thickness. In particular, we have investigated modifications of the existing spin coat equation for solutions of polystyrene dissolved in toluene using the GYRSET system. In addition, we compare homogeneity of films prepared by open spin coating and GYRSET systems. (orig.)

  5. Thickness Measurement of V2O5 Nanometric Thin Films Using a Portable XRF

    Directory of Open Access Journals (Sweden)

    Fabio Lopes

    2016-01-01

    Full Text Available Nanometric thin films have always been chiefly used for decoration; however they are now being widely used as the basis of high technology. Among the various physical qualities that characterize them, the thickness strongly influences their properties. Thus, a new procedure is hereby proposed and developed for determining the thickness of V2O5 nanometric thin films deposited on the glass surface using Portable X-Ray Fluorescence (PXRF equipment and the attenuation of the radiation intensity Kα of calcium present in the glass. It is shown through the present paper that the radiation intensity of calcium Kα rays is proportional to film thickness in nanometric films of vanadium deposited on the glass surface.

  6. Influence of Thickness on Field Emission Characteristics of Nanometre Boron Nitride Thin Films

    Institute of Scientific and Technical Information of China (English)

    顾广瑞; 李英爱; 陶艳春; 何志; 李俊杰; 殷红; 李卫青; 赵永年

    2003-01-01

    Nanometre boron nitride (BN) thin films with various thickness (54-135 nm) were prepared on Si(100) by rf magnetic sputtering physical vapour deposition. The field emission characteristics of the BN thin films were measured in an ultrahigh vacuum system. A threshold electric field of 11 V/μm and the highest emission current density of 240 μA/cm2 at an electric field of 23 V/μm were obtained for the about 54-nm-thick BN film. The threshold electric field increases with increasing the thickness in the nanometre range. The Fowler-Nordheim plots show that electrons were emitted from BN to vacuum by tunnelling through the potential barrier at the surface of BN thin films.

  7. Image scanning ellipsometry for measuring the transient, film thickness profiles of draining liquids

    International Nuclear Information System (INIS)

    Image Scanning Ellipsometry, a technique to measure the two-dimensional thickness profile of a nonuniform, thin, liquid film, from several nanometers up to tens of microns, in the steady and transient states, was developed and tested. The ability of this full-field imaging technique to map every point on the surface simultaneously was demonstrated by measuring the thickness profiles of very thin, draining, liquid films in the interfacial, transition, hydrodynamic, and capillary regions. Depending on the relative size of the intermolecular, gravitational, and capillary forces, four flow regions were identified. Using a simple model for the transient film thickness profiles of a completely wetting, draining film of FC-70, the experimental results were successfully analyzed in the interfacial, transition, and hydrodynamic regions. A diffusion coefficient for the junction line between the interfacial and transition regions was theoretically and experimentally evaluated

  8. Self-Poling of BiFeO3 Thick Films.

    Science.gov (United States)

    Khomyakova, Evgeniya; Sadl, Matej; Ursic, Hana; Daniels, John; Malic, Barbara; Bencan, Andreja; Damjanovic, Dragan; Rojac, Tadej

    2016-08-01

    Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.

  9. Effect of heat and film thickness on a photoinduced phase transition in azobenzene liquid crystalline polyesters

    DEFF Research Database (Denmark)

    Sanchez, C; Alcala, R; Hvilsted, Søren;

    2003-01-01

    The liquid crystal to isotropic phase transition induced with 488 nm light in films of liquid crystalline azobenzene polyesters has been studied as a function of temperature, light intensity, and film thickness. That phase transition is associated with the photoinduced trans-cis-trans isomerizati......The liquid crystal to isotropic phase transition induced with 488 nm light in films of liquid crystalline azobenzene polyesters has been studied as a function of temperature, light intensity, and film thickness. That phase transition is associated with the photoinduced trans......-cis-trans isomerizations of azobenzene molecules and it has been found that the 488 nm light power needed to induce the transition to the isotropic state increases when the film thickness decreases. The irradiation with the laser beam heats the film up and this seems to be responsible for the observed thickness dependence....... Optical absorption measurements show that azobenzene aggregates present in one of the polymers are broken down in the photoinduced phase transition. The birefringence induced with low power 488 nm light in films before and after undergoing that photoinduced phase transition has also been studied...

  10. Superconducting properties and chemical composition of NbTiN thin films with different thickness

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, L.; Peng, W.; You, L. X.; Wang, Z., E-mail: zwang@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China)

    2015-09-21

    In this research, we systematically investigated the superconducting properties and chemical composition of NbTiN thin films prepared on single-crystal MgO substrates. The NbTiN thin films with different thicknesses (4–100 nm) were deposited by reactive DC magnetron sputtering at ambient temperature. We measured and analyzed the crystal structure and thickness dependence of the chemical composition using X-ray diffraction and X-ray photoelectron spectroscopy depth profiles. The films exhibited excellent superconducting properties, with a high superconducting critical temperature of 10.1 K, low resistivity (ρ{sub 20} = 93 μΩ cm), and residual resistivity ratio of 1.12 achieved for 4-nm-thick ultrathin NbTiN films prepared at the deposition current of 2.4 A. The stoichiometry and electrical properties of the films varied gradually between the initial and upper layers. A minimum ρ{sub 20} of 78 μΩ cm and a maximum residual resistivity ratio of 1.15 were observed for 12-nm-thick films, which significantly differ from the properties of NbN films with the same NaCl structure.

  11. Thickness-dependent autophobic dewetting of thin polymer films on coated substrates.

    Science.gov (United States)

    Sun, Yan; Shull, Kenneth R; Walko, Donald A; Wang, Jin

    2011-01-01

    We demonstrate that the wetting behavior of a thin liquid film, poly(4-bromostyrene) (PBrS), on top of a solid substrate may be effectively controlled with the insertion of a secondary liquid film, poly(4-vinyl pyridine) (P4VP), underneath the primary film. This secondary film remains stable under all conditions, and can be viewed as an extension of the substrate itself. On the basis of results from X-ray standing waves generated via total external reflection from an X-ray mirror, time-of-flight secondary ion mass spectroscopy, optical microscopy, and atomic force microscopy, we construct the full Helmholtz free energy versus PBrS thickness curve using existing theories that account for both long- and short-range interactions. The form of the free energy curve, which contains an inflection point and an absolute minimum at a nonzero PBrS thickness, accurately reflects our observation that thick PBrS films undergo autophobic dewetting on top of the stable P4VP, while sufficiently thin PBrS films remain stable. The thickness of the autophobic wetting layer is controlled by the range of the repulsive interaction between the film and the substrate, and is found to be ∼4 nm for the PBrS/P4VP interface. PMID:21117671

  12. Sensor for thickness measurement of a liquid metal film

    International Nuclear Information System (INIS)

    Description, calibration and measuring method of a sensor for the measure of thin liquid metal depths in a temperature range of 0-5000C and for shift frequencies from 0 to 100 Hz; these sensors are based on the principle of induction-coil impedance variation, as a function of the thickness of an electrical conductor matter placed in the coil magnetic field

  13. An estimation method on failure stress of micro thickness Cu film-substrate structure

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The failure of thin film-substrate structure occurs mainly at the thin film or the interface. However, the characterizing and estimating methods of failure stress in thin film are neither uniform nor effective because there are some complex effects of such as size, interface and stress state on the failure behavior of thin film-substrate structure. Based on the scanning electron microscope (SEM) in-situ in- vestigation on the failure models of the Cu thin film-substrate structure and the nano scratched testing results, the failure stresses in different thicknesses of the Cu film-substrate were characterized, which were compared and confirmed by other methods, such as Stoney formula and other empiric equations. These results indicate that the novel estimating method of failure stress in thin film based on the critical wavelength of surface unstable analysis is better than other methods. The main reason is that the novel estimating method of failure stress in meso thickness film fully considered the effect factors of free surface unstable behavior and elastic anisotropy of thin film. Therefore, the novel estimating method of failure stress assists people to understand the critical interfacial strength and to set up the failure criterion of thin film-substrate structure.

  14. An estimation method on failure stress of micro thickness Cu film-substrate structure

    Institute of Scientific and Technical Information of China (English)

    WANG XiShu; LI Ying; MENG XiangKang

    2009-01-01

    The failure of thin film-substrate structure occurs mainly at the thin film or the interface.However,the characterizing and estimating methods of failure stress in thin film are neither uniform nor effective because there are some complex effects of such as size,interface and stress state on the failure behavior of thin film-substrate structure.Based on the scanning electron microscope(SEM)in-situ investigation on the failure models of the Cu thin film-substrata structure and the nano scratched testing results,the failure stresses in different thicknesses of the Cu film-substrate were characterized,which were compared and confirmed by other methods,such as Stoney formula and other empiric equations.These results indicate that the novel estimating method of failure stress in thin film based on the critical wavelength of surface unstable analysis is better than other methods.The main reason is that the novel estimating method of failure stress in meso thickness film fully considered the effect factors of free surface unstable behavior and elastic anisotropy of thin film.Therefore,the novel estimating method of failure stress assists people to understand the critical interracial strength and to set up the failure criterion of thin film-substrate structure.

  15. Diffusive phase transitions in ferroelectrics and antiferroelectrics

    OpenAIRE

    Prosandeev, S. A.; Raevski, I. P.; Waghmare, U. V.

    2003-01-01

    In this paper, we present a microscopic model for heterogeneous ferroelectric and an order parameter for relaxor phase. We write a Landau theory based on this model and its application to ferroelectric PbFe$_{1/2}$Ta$_{1/2}$O$_3$ (PFT) and antiferroelectric NaNbO$_3$:Gd. We later discuss the coupling between soft mode and domain walls, soft mode and quasi-local vibration and resulting susceptibility function.

  16. Surface functionalization by fine ultraviolet-patterning of nanometer-thick liquid lubricant films

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Renguo [Department of Complex Systems Science, Graduate School of Information Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Zhang, Hedong, E-mail: zhang@is.nagoya-u.ac.jp [Department of Complex Systems Science, Graduate School of Information Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Komada, Suguru [Department of Micro-Nano System Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Mitsuya, Yasunaga [Nagoya Industrial Science Research Institute, Noa Yotsuya Building 2F, 1-13, Yotsuya-Douri, Chikusa-ku, Nagoya 464-0819 (Japan); Fukuzawa, Kenji; Itoh, Shintaro [Department of Micro-Nano System Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2014-11-30

    Highlights: • We present fine UV-patterning of nm-thick liquid films for surface functionalization. • The patterned films exhibit both a morphological pattern and a functional pattern of different surface properties. • The finest pattern linewidth was 0.5 μm. • Fine patterning is crucial for improving surface and tribological properties. - Abstract: For micro/nanoscale devices, surface functionalization is essential to achieve function and performance superior to those that originate from the inherent bulk material properties. As a method of surface functionalization, we dip-coated nanometer-thick liquid lubricant films onto solid surfaces and then patterned the lubricant films with ultraviolet (UV) irradiation through a photomask. Surface topography, adhesion, and friction measurements demonstrated that the patterned films feature a concave–convex thickness distribution with thicker lubricant in the irradiated regions and a functional distribution with lower adhesion and friction in the irradiated convex regions. The pattern linewidth ranged from 100 to as fine as 0.5 μm. The surface functionalization effect of UV-patterning was investigated by measuring the water contact angles, surface energies, friction forces, and depletion of the patterned, as-dipped, and full UV-irradiated lubricant films. The full UV-irradiated lubricant film was hydrophobic with a water contact angle of 102.1°, and had lower surface energy, friction, and depletion than the as-dipped film, which was hydrophilic with a water contact angle of 80.7°. This demonstrates that UV irradiation substantially improves the surface and tribological properties of the nanometer-thick liquid lubricant films. The UV-patterned lubricant films exhibited superior surface and tribological properties than the as-dipped film. The water contact angle increased and the surface energy, friction, and depletion decreased as the pattern linewidth decreased. In particular, the 0.5-μm patterned lubricant

  17. Properties of second phase (BaSnO3, Sn) added-YBCO thick films

    International Nuclear Information System (INIS)

    The improvement of the critical current density Jc of YBCO thick films has been attempted by adding BaSnO3 powder and ultrafine Sn particles, whose diameter is about 2 μm and 7 x 10-2 μm, respectively. It was found that the addition of a small amount of these particles was effective for the enhancement of Jc of thick films prepared by a liquid-phase processing method. The 1 wt.% BaSnO3 films fired at Ts=1040-1060 C and the 3 wt.% Sn films (Ts=1030-1060 C) showed Jc values (77 K, 0 T) of about 2.1-2.4 x 103 Acm-2 and 3.1-3.5 x 103 Acm-2, respectively, as compared to 2.0 x 103 Acm-2 for the undoped films. (orig.)

  18. Improved gas sensing and dielectric properties of Fe doped hydroxyapatite thick films: Effect of molar concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Mene, Ravindra U. [PDEA' s, Annasaheb Waghire College of Science, Arts and Commerce, Otur 412409, M.S. (India); School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606, M.S. (India); Mahabole, Megha P. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606, M.S. (India); Mohite, K.C. [Haribhai. V. Desai College, Pune 411002, M.S. (India); Khairnar, Rajendra S., E-mail: rskhairnarsps@gmail.com [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606, M.S. (India)

    2014-02-01

    Highlights: • We report improved gas sensing and dielectric characteristics of Fe ion exchanged HAp films. • Fe doped HAp film shows maximum gas response at relatively lower temperature. • Response and gas uptake capacity of sensors is improved for appropriate amount of Fe ions in HAp matrix. • Fe-HAp films exhibit remarkable improvement in dielectric properties compared to pure HAp. • Fe doped HAp films show significant improvement in gas sensing as well as in dielectric properties. - Abstract: In the present work Fe doped hydroxyapatite (Fe-HAp) thick films has been successfully utilized to improve the gas sensing as well as its dielectric properties. Initially, HAp nano powder is synthesized by chemical precipitation process and later on Fe ions are doped in HAp by ion exchange process. Structural and morphological modifications are observed by means of X-ray diffraction and scanning electron microscopy analysis. The sensing parameters such as operating temperature, response/recovery time and gas uptake capacity are experimentally determined. The Fe-HAp (0.05 M) film shows improved CO and CO{sub 2} gas sensing capacity at lower operating temperature compared to pure HAp. Moreover, variation of dielectric constant and dielectric loss for pure and Fe-HAp thick films are studied as a function of frequency in the range of 10 Hz–1 MHz. The study reveals that Fe doped HAp thick films improve the sensing and dielectric characteristics as compared to pure HAp.

  19. Improved gas sensing and dielectric properties of Fe doped hydroxyapatite thick films: Effect of molar concentrations

    International Nuclear Information System (INIS)

    Highlights: • We report improved gas sensing and dielectric characteristics of Fe ion exchanged HAp films. • Fe doped HAp film shows maximum gas response at relatively lower temperature. • Response and gas uptake capacity of sensors is improved for appropriate amount of Fe ions in HAp matrix. • Fe-HAp films exhibit remarkable improvement in dielectric properties compared to pure HAp. • Fe doped HAp films show significant improvement in gas sensing as well as in dielectric properties. - Abstract: In the present work Fe doped hydroxyapatite (Fe-HAp) thick films has been successfully utilized to improve the gas sensing as well as its dielectric properties. Initially, HAp nano powder is synthesized by chemical precipitation process and later on Fe ions are doped in HAp by ion exchange process. Structural and morphological modifications are observed by means of X-ray diffraction and scanning electron microscopy analysis. The sensing parameters such as operating temperature, response/recovery time and gas uptake capacity are experimentally determined. The Fe-HAp (0.05 M) film shows improved CO and CO2 gas sensing capacity at lower operating temperature compared to pure HAp. Moreover, variation of dielectric constant and dielectric loss for pure and Fe-HAp thick films are studied as a function of frequency in the range of 10 Hz–1 MHz. The study reveals that Fe doped HAp thick films improve the sensing and dielectric characteristics as compared to pure HAp

  20. Impact of thickness on microscopic and macroscopic properties of Fe-Te-Se superconductor thin films

    Directory of Open Access Journals (Sweden)

    N. Zhang

    2015-04-01

    Full Text Available A series of iron based Fe-Te-Se superconductor thin films depositing on 0.7wt% Nb-doped SrTiO3 at substrate temperatures in the 250°C -450°C range by pulsed laser ablation of a constituents well defined precursor FeTe0.55Se0.55 target sample. We study the possible growth mechanism and its influence on the superconductor properties. Experimental results indicate the superconductive and non-superconductive properties are modulated only by the thickness of the thin films through the temperature range. The films appear as superconductor whenever the thickness is above a critical value ∼30nm and comes to be non-superconductor below this value. Relative ratios of Fe to (Te+Se in the films retained Fe/(Te+Se1 for non-superconductor no matter what the film growth temperature was. The effect of film growth temperature takes only the role of modulating the ratio of Te/Se and improving crystallinity of the systems. According to the experimental results we propose a sandglass film growth mechanism in which the interfacial effect evokes to form a Fe rich area at the interface and Se or Te starts off a consecutive filling up process of chalcogenide elements defect sides, the process is significant before the film thickness reaches at ∼30nm.

  1. Transient elastohydrodynamic lubrication film thickness in sliding and rolling line contacts

    International Nuclear Information System (INIS)

    The contact behavior between cam and follower is greatly influenced by the kinematics and dynamics of the whole valve train system. This is the reason that both shape and thickness of the fluid film in the contact gap are mainly determined by applied loads and relative contact speeds as well as the curvatures of contacting elements. Most of the studies about lubricant film behavior between cam and follower have been performed without a consideration of transient effects in the contact gap. For the computational difficulties of transient effects, most contact conditions such as relative contacting speeds have been regarded as quasi-steady state during the whole operating cycle. In this work, in order to obtain stable convergence, a multigrid multi-level method is used for the computation of load capacity in the lubricant film. Nonlinear valve spring dynamics are also considered in the same way as Hanachi's. From the computational results, transient EHL film thicknesses under the conditions of different contact geometries are computed for a pushrod type valve train system during an engine cycle. Several results show the squeeze film effect, which is generally not found with conventional EHL computations of the cam and follower contact. The results are also compared with those by the Dowson-Hamrock (D-H) formula, which does not consider the dynamic film effect. Without the dynamic film effect as in D-H's formula, the minimum film thickness is highly dependent on the entraining lubricant velocity, whereas the minimum film thickness including the squeeze film effect is dependent on the applied load

  2. Effect of Nanotube Film Thickness on the Performance of Nanotube-Silicon Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Daniel D. Tune

    2013-12-01

    Full Text Available The results of measurements on solar cells made from randomly aligned thin films of single walled carbon nanotubes (SWCNTs on n-type monocrystalline silicon are presented. The films are made by vacuum filtration from aqueous TritonX-100 suspensions of large diameter arc-discharge SWCNTs. The dependence of the solar cell performance on the thickness of the SWCNT film is shown in detail, as is the variation in performance due to doping of the SWCNT film with SOCl2.

  3. Unusual Contact-Line Dynamics of Thick Films and Drops

    Science.gov (United States)

    Veretennikov, Igor; Agarwal, Abhishek; Indeikina, Alexandra; Chang, Hsueh-Chia

    1999-01-01

    We report several novel phenomena In contact-line and fingering dynamics of macroscopic spinning drops and gravity-driven films with dimensions larger than the capillary length. It is shown through experimental and theoretical analysis that such macroscopic films can exhibit various interfacial shapes, including multi valued ones, near the contact line due to a balance between the external body forces with capillarity. This rich variety of front shapes couples with the usual capillary, viscous, and intermolecular forces at the contact line to produce a rich and unexpected spectrum of contact-line dynamics. A single finger develops when part of the front becomes multivalued on a partially wetting macroscopic spinning drop in contrast to a different mechanism for microscopic drops of completely wetting fluids. Contrary to general expectation, we observe that, at high viscosity and low frequencies of rotation, the speed of a glycerine finger increases with increasing viscosity. Completely wetting Dow Corning 200 Fluid spreads faster over a dry inclined plane than a prewetted one. The presence of a thin prewetted film suppresses fingering both for gravity-driven flow and for spin coating. We analyze some of these unique phenomena in detail and offer qualitative physical explanations for the others.

  4. Determination of oxide film thickness on aluminium using 14-MeV neutron activation and BET method

    International Nuclear Information System (INIS)

    A new method is described for the determination of the mean film thickness of aluminium oxides by 14-MeV neutron activation analysis of the oxygen and by BET measurement of the surface area. The mean film thickness obtained is independent of the surface roughness. Stable oxide films consisting of only a few atomic layers of oxygen are detected on aluminium. (author)

  5. Frequency characteristics of the MIM thick film capacitors fabricated by laser micro-cladding electronic pastes

    Energy Technology Data Exchange (ETDEWEB)

    Cao Yu; Li Xiangyou [Wuhan National Laboratory for Optoelectronics, Huazhong University of Sci and Tech, 430074 Wuhan, Hubei (China); Zeng Xiaoyan [Wuhan National Laboratory for Optoelectronics, Huazhong University of Sci and Tech, 430074 Wuhan, Hubei (China)], E-mail: xyzeng@mail.hust.edu.cn

    2008-05-25

    With rapid development of the electronic industry, how to respond the market requests quickly, shorten R and D prototyping fabrication period, and reduce the cost of the electronic devices have become a challenge work, which need flexible manufacturing methods. In this work, two direct write processing methods, direct material deposition by microPen and Nd:YAG laser micro-cladding, are integrated with CAD/CAM technology for the hybrid fabrication of passive electronic components. Especially, the metal-insulator-metal (MIM) type thick film capacitors are fabricated on ceramic substrates by this method. A basic two-step procedure of laser micro-cladding electronic pastes (LMCEPs) process for the thick film pattern preparation is presented. For a better understanding of the MIM thick film capacitor characterization, equivalent circuit models at low-frequency and high-frequency domains are introduced, respectively. The frequency characteristics tests up to 1.8 GHz of capacitance stability, equivalent series resistance (ESR), equivalent series inductance (ESL) and impendence are performed, and the results show good DC voltage stability (<2.48%), good frequency stability (<2.6%) and low dissipation factor (<0.6%) of the MIM thick film capacitors, which may get application to megahertz regions. The further developments of the LMCEP process for fabricating MIM thick film capacitors are also investigated.

  6. Disappearance of ferroelectric critical thickness in epitaxial ultrathin BaZr O3 films

    Science.gov (United States)

    Zhang, Yajun; Li, Gui-Ping; Shimada, Takahiro; Wang, Jie; Kitamura, Takayuki

    2014-11-01

    The intrinsic critical ferroelectric thickness of epitaxial ultrathin capacitors of incipient ferroelectric BaZr O3 (BZO) films with realistic SrRu O3 (SRO) electrodes is investigated by first-principles calculations based on density functional theory. We reveal that polarization can stably exist even in one-unit-cell thick BZO films, i.e., absence of critical thickness, whereas the widely investigated proper ferroelectrics like BaTi O3 and SrTi O3 films have no polarization. The influences of realistic ferroelectric-electrode interface and misfit strain on the ionic and electronic structures of the BZO-SRO thin film system have been examined under the short-circuited boundary condition. It is found that the ionic polarization of conductive SRO electrodes can effectively strengthen the screening of bound charges at the interface, which greatly reduces the depolarization field in the BZO films. Furthermore, the epitaxial misfit strain remarkably enhances the polarization through the enhancement of hybridization of Zr and O electron orbitals, resulting in the disappearance of ferroelectric critical thickness. Our findings are beyond the critical thickness of proper ferroelectrics and are thus promising for future nanometer-scale ferroelectric device such as high-density ferroelectric memory.

  7. Liquid film thickness measurement in small square pipe using ultrasonic pulse-echo method

    International Nuclear Information System (INIS)

    The ultrasonic pulse-echo method is applied to measure thickness in a liquid film. To prevent a piezoelectric element cracking under high temperature conditions, the maximum frequency of sound is limited. On the other hand, the required thickness resolution is about 0.05mm to detect whether or not dryout has occurred. An ultrasonic transducer frequency of 5MHz is selected to satisfy both frequency and resolution requirements for air-water experiments. The changing liquid film thickness on a stainless steel plate is simultaneously measured with the ultrasonic transducer and a laser displacement sensor. The two types of results show good agreement within the range from 0.06 to 0.22mm. Next, the air-water annular flow in the small vertical square pipe is measured using the pulse-echo method. A liquid film sensor based on the electrical conductance method is also used for results comparison. The most frequently observed thickness measured by the two methods is almost the same based on comparison of the measurement histograms. To estimate the resolution of the pulse-echo method, the pulse intensities of multiple reflections in the liquid film are simulated. The results show that a liquid film thickness of 0.03mm can be measured even if the ultrasonic frequency is less than 5MHz. (author)

  8. Investigation of top electrode for PZT thick films based MEMS sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Pedersen, Thomas; Kristiansen, Paw T.;

    2010-01-01

    influence on the conductance of the top electrode influencing the optimal top electrode thickness. A 100 nm thick top electrode on the PZT thick film with a surface roughness of 273 nm has a 4.5 times higher resistance compared to a similar wire on a planar SiO2 surface which has a surface roughness of less......In this work processing of screen printed piezoelectric PZT thick films on silicon substrates is investigated for use in future MEMS devices. E-beam evaporated Al and Pt are patterned on PZT as a top electrode using a lift-off process with a line width down to 3 mu m. Three test structures are used...... to investigate the optimal thickness of the top electrode, the degradation of the piezoelectric properties of the PZT film in absence of a diffusion barrier layer and finally how to fabricate electrical interconnects down the edge of the PZT thick film. The roughness of the PZT is found to have a strong...

  9. High-rate growth YBa2Cu3O7-X thick films and thickness dependence of critical current density

    International Nuclear Information System (INIS)

    High-rate in-situ YBa2Cu3O7-x (YBCO) film growth was demonstrated by means of the electron beam co-evaporation. Even though our oxygen pressure is low, ∼ 5 x 10-5 Torr, we can synthesize as-grown superconducting YBCO films at a deposition rate of around 10 nm/s. Relatively high temperatures of around 900 degree C was necessary in this process so far, and it suggests that this temperature at a given oxygen activity allows a Ba-Cu-O liquid formation along with an YBCO epitaxy. Local critical current density shows a clear correlation with local resistivity. Homogeneous transport properties with a large critical current density (4 - 5 MA/cm2 at 77K, 0T) are observed in top faulted region while it is found that the bottom part carries little supercurrent with a large local resistivity. Therefore, it is possible that thickness dependence of critical current density is closely related with a topological variation of good superconducting paths and/or grains in the film bodies. The information derived from it may be useful in the characterization and optimization of superconducting films for electrical power and other applications.

  10. Terahertz ultrathin film thickness sensor below λ/90 based on metamaterial.

    Science.gov (United States)

    Chen, Meng; Fan, Fei; Shen, Si; Wang, Xianghui; Chang, Shengjiang

    2016-08-10

    The film thickness sensing based on metamaterial is investigated in the terahertz (THz) region. We fabricated the metamaterial sensor, and demonstrated its resonance by using the THz time-domain spectroscopy system. The results show that the resonant dip redshifts as the film thickness increases, which achieves reliable film sensing in the THz band. Its sensitivity is larger than 9.4 GHz/μm with a film thinner than λ/90. Meanwhile, the sensing mechanism is revealed by the simulation of near-field resonance distribution, which shows that the resonant intensity is stronger when the field is closer to the interface between the metamaterial surface and polyvinyl alcohol film. Therefore, the nonlinear type of the sensing sensitivity in our experiment can be well explained, and a higher sensitive sensing can be obtained when the film thickness is smaller. This simple and flexible method can realize the ultrathin film sensing in the THz region, and has application potential in the real-time monitoring of sample quality.

  11. Interaction domains in high performance NdFeB thick films

    International Nuclear Information System (INIS)

    Thick sputtered films (5-300 micron) of NdFeB have excellent hard magnetic properties which make them attractive for applications in micro-electro-mechanical systems (MEMS). A two step process consisting of triode sputtering and high temperature annealing produced films with energy densities approaching those of sintered NdFeB magnets. Magnetic force microscopy (MFM) using hard magnetic tips showed that the films deposited without substrate heating and at 300 C exhibited magnetic domains typical of low anisotropy materials. These films were amorphous in the as-deposited state. The film deposited at 500 C was crystalline and displaid hard magnetic properties. This was reflected in the magnetic microstructure which showed interaction domains typical of highly textured and high magnetic anisotropy materials with a grain size below or equal to the critical single-domain particle limit. With increasing substrate temperature, the domain patterns of the annealed films became coarser, indicating higher degrees of texture.

  12. Adsorbed films of three-patch colloids: Continuous and discontinuous transitions between thick and thin films

    Science.gov (United States)

    Dias, C. S.; Araújo, N. A. M.; Telo da Gama, M. M.

    2014-09-01

    We investigate numerically the role of spatial arrangement of the patches on the irreversible adsorption of patchy colloids on a substrate. We consider spherical three-patch colloids and study the dependence of the kinetics on the opening angle between patches. We show that growth is suppressed below and above minimum and maximum opening angles, revealing two absorbing phase transitions between thick and thin film regimes. While the transition at the minimum angle is continuous, in the directed percolation class, that at the maximum angle is clearly discontinuous. For intermediate values of the opening angle, a rough colloidal network in the Kardar-Parisi-Zhang universality class grows indefinitely. The nature of the transitions was analyzed in detail by considering bond flexibility, defined as the dispersion of the angle between the bond and the center of the patch. For the range of flexibilities considered we always observe two phase transitions. However, the range of opening angles where growth is sustained increases with flexibility. At a tricritical flexibility, the discontinuous transition becomes continuous. The practical implications of our findings and the relation to other nonequilibrium transitions are discussed.

  13. Temperature effect on the mechanical properties of gold nano films with different thickness

    Science.gov (United States)

    Birleanu, C.; Pustan, M.; Merie, V.; Müller, R.; Voicu, R.; Baracu, A.; Craciun, S.

    2016-08-01

    The microelectronic industry has been growing rapidly over the past 10-20 years, as has its reliance on thin-film deposition techniques for components manufacturing. As modern devices generate quite a bit of heat and peak temperatures can reach over 100°C, there is a need to provide adequate cooling for a device to stay operable. A series of chrome gold films with various thicknesses were prepared on silicon substrate. The structural and surface morphology, adhesion, friction, Young's modulus and hardness of this thin film were studied for three different thicknesses under temperature variations between 20 to 100°C. The variation of the film thickness and temperature affects the structure, surface and mechanical properties of Cr/Au thin films. Obviously these thermal cycles are unavoidable and eventually lead to thermal fatigue damage and device failure. Consequently, the knowledge of mechanical properties of thin films at elevated temperatures is required for proper chip design and reliability assessments. Elastic modulus and hardness are two important mechanical properties of the thin-film structural materials used in microelectromechanical systems. The mechanical properties of electroplated chrome-gold thin film are found to be highly dependent on the manufacturing process and also of the thin film thickness. On the other hand it is important to find the effect of temperature on these properties. Investigated samples are made of thin layers of chromium and gold with differences in thickness. The three levels of nominal thicknesses of Au films are: 100, 300 and 500 nm. In order to obtain the relations between surface pattern/surface chemistry and nanotribological properties and adhesive behaviors of the films were evaluated with a noise- and vibration-isolated and environment-controlled XE 70-AFM from Park Systems, using the contact mode. The tests were performed at temperatures between 10°C - 100°C and at a relative humidity RH of 40%. Each measurement was

  14. Mems-based pzt/pzt bimorph thick film vibration energy harvester

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian;

    2011-01-01

    We describe fabrication and characterization of a significantly improved version of a MEMS-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. The main advantage of bimorph vibration energy harvesters is that strain energy is not lost in mechanical...... support materials since only PZT is strained, and thus it has a potential for significantly higher output power. An improved process scheme for the energy harvester resulted in a robust fabrication process with a record high fabrication yield of 98.6%. Moreover, the robust fabrication process allowed...... a high pressure treatment of the screen printed PZT thick films prior to sintering, improving the PZT thick film performance and harvester power output reaches 37.1 μW at 1 g....

  15. Micro-Machined High-Frequency (80 MHz) PZT Thick Film Linear Arrays

    Science.gov (United States)

    Zhou, Qifa; Wu, Dawei; Liu, Changgeng; Zhu, Benpeng; Djuth, Frank; Shung, K. Kirk

    2010-01-01

    This paper presents the development of a micro-machined high-frequency linear array using PZT piezoelectric thick films. The linear array has 32 elements with an element width of 24 μm and an element length of 4 mm. Array elements were fabricated by deep reactive ion etching of PZT thick films, which were prepared from spin-coating of PZT solgel composite. Detailed fabrication processes, especially PZT thick film etching conditions and a novel transferring-and-etching method, are presented and discussed. Array designs were evaluated by simulation. Experimental measurements show that the array had a center frequency of 80 MHz and a fractional bandwidth (−6 dB) of 60%. An insertion loss of −41 dB and adjacent element crosstalk of −21 dB were found at the center frequency. PMID:20889407

  16. The strain dependence of the transport current characteristics in Bi-2223 silver clamped thick film

    International Nuclear Information System (INIS)

    The dependences of stress on strain, strain on the critical current density, and the relation of Jc(H) at several strains were measured in Bi-2223 silver clamped thick film. The results indicate that the stress-strain curve has two strain transitions which are respectively correspond to the beginning and ending of breaking in Bi1.8Pb0.4Sr2Ca2Cu3Oy thick film. At ΔX/X≤2.5%, the critical current density Jc decreases slowly with ΔX/X increasing. At ΔX/X≥2.5%, Jc decreases rapidly with ΔX/X increasing. As strain increases, the characteristics of Jc(H) decrease rapidly and the weak link junctions emerges obviously. The microstructures show that the decrease of Jc and the variance of characteristics of Jc(H) relate to the breaking of intergrain and grains in the thick film

  17. Radiochromic film thickness correction with convergent cone- beam optical CT scanner

    International Nuclear Information System (INIS)

    A cone-beam optical computed tomography (CT) scanner was modified by replacing the diffuse planar yellow light emitting diode (LED) source with violet and red LEDs and a large Fresnel lens. The narrow band sources provided transmission images of radiochromic EBT2 film at 420 and 633 nm, with air as a reference. The dose image was not detectable with the violet source. This demonstrated spectral independence of the two images. Assuming attenuation at 420 nm was dominated by absorption from yellow dye in the active film layer allowed a relative thickness image to be calculated. By scaling the 633 nm optical density image for relative thickness, non-uniformities in the recorded dose distribution due to film thickness variations, were removed

  18. (100)-Textured KNN-based thick film with enhanced piezoelectric property for intravascular ultrasound imaging

    Science.gov (United States)

    Zhu, Benpeng; Zhang, Zhiqiang; Ma, Teng; Yang, Xiaofei; Li, Yongxiang; Shung, K. Kirk; Zhou, Qifa

    2015-04-01

    Using tape-casting technology, 35 μm free-standing (100)-textured Li doped KNN (KNLN) thick film was prepared by employing NaNbO3 (NN) as template. It exhibited similar piezoelectric behavior to lead containing materials: a longitudinal piezoelectric coefficient (d33) of ˜150 pm/V and an electromechanical coupling coefficient (kt) of 0.44. Based on this thick film, a 52 MHz side-looking miniature transducer with a bandwidth of 61.5% at -6 dB was built for Intravascular ultrasound (IVUS) imaging. In comparison with 40 MHz PMN-PT single crystal transducer, the rabbit aorta image had better resolution and higher noise-to-signal ratio, indicating that lead-free (100)-textured KNLN thick film may be suitable for IVUS (>50 MHz) imaging.

  19. Development of BZO Doped YGdBCO Thick Films Using TFA-MOD Process

    Science.gov (United States)

    Nakamura, T.; Nakahata, K.; Yoshizumi, M.; Izumi, T.; Shiohara, Y.; Kimura, K.; Hasegawa, T.; Kato, T.; Hirayama, T.

    TFA-MOD (Metal Organic Deposition using Trifluoro-acetates) process is of considerable practical concern for future applications since it can fabricate high performance coated conductors (CCs) with low cost. In this study, we developed the process for fabricating thick films in BZO nanoparticle doped Y0.77Gd0.23Ba1.5Cu3Oy (YGdBCO) CCs in order to realize high Ic values under magnetic field. The effect of RTR (Reel To Reel)-dip-coating conditions on microstructure, Jc(-B-θ) properties, etc. was investigated in order to fabricate crack-free thick and high performance films. A BZO doped YGdBCO film with uniform 3.0 μm thickness showed the high in-field Ic and Jc values of 55.6 A/cm-w and 0.18 MA/cm2@77.8K, 3T, respectively.

  20. Translational Diffusion in Supported Rubberly Polymer Films at Different Layer Thicknesses

    Science.gov (United States)

    Pak, Hunkyun; Ellingson, Peter Christopher; Yu, Hyuk

    2002-03-01

    Translational diffusion of an organic dye with C18 hydrocarbon tail (4-octadecylamino-NBD) is examined in thin films of poly(isoprene) and poly(dimethylsiloxane) spincast on substrates. Surface functionalized silicon wafers were used as the substrates. Two kinds of surface functionalized wafers, one with predominantly methyl group and the other with primary amine group, were examined with respect to the diffusion as a function of film thickness over a range of 10-2000 nm. The diffusion coefficient was determined by the technique of fluorescence recovery after photobleaching and the film thickness by ellipsometry. The diffusion coefficient is found to reduce substantially from that in bulk polymers, vary by an order of magnitude over the thickness range, and its dependence is analyzed in terms of a simple model that takes into account of polymer interactions with the functionalized surfaces.

  1. Fabrication and characterization of MEMS-based PZT/PZT bimorph thick film vibration energy harvesters

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian;

    2012-01-01

    We describe the fabrication and characterization of a significantly improved version of a microelectromechanical system-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass; the harvester is fabricated in a fully monolithic process. The main advantage...... of bimorph vibration energy harvesters is that strain energy is not lost in mechanical support materials since only Pb(ZrxTi1-x)O3 (PZT) is strained; as a result, the effective system coupling coefficient is increased, and thus a potential for significantly higher output power is released. In addition, when...... yield of 98%. The robust fabrication process allowed a high pressure treatment of the screen printed PZT thick films prior to sintering. The high pressure treatment improved the PZT thick film performance and increased the harvester power output to 37.1 μW at 1 g root mean square acceleration. We also...

  2. Application of Al2O3-based polyimide composite thick films to integrated substrates using aerosol deposition method

    International Nuclear Information System (INIS)

    Al2O3-based polyimide composite thick films were successfully fabricated with reduction of residual stress and improvement in plasticity for integrated substrates at room temperature by aerosol deposition method. Scanning electron microscopy and energy dispersive spectroscopy mappings exhibited a high content of Al2O3 evenly distributed in the composite thick films. The relative dielectric permittivity and loss tangent of Al2O3-based polyimide composite thick films were 7.6 and 0.007, respectively. There was almost no change in the crystallite size of Al2O3-based polyimide composite thick films compared with that of starting powder due to the reduction of kinetic energy by polyimide during collision on the substrates. Moreover, it was confirmed that the residual stress of Al2O3-based polyimide composite thick films remarkably decreased compared with that of Al2O3 thick films.

  3. Liquid film thickness on fuel rod under high pressure and high temperature steam-water two phase flow

    International Nuclear Information System (INIS)

    This paper deals with behavior of liquid film on the fuel rod which is very important for the critical power prediction. In this study, the liquid film measurement device using an ultrasonic transducer has been developed and the liquid film thickness data has been obtained for a simulated BWR 4 x 4 rod bundle under 1 MPa condition. The cooling fluid is steam-water mixture and flow direction is vertical. Also the following results were obtained. Firstly, the liquid film thickness becomes thinner with increasing quality and the liquid film thickness is about 0.2 mm at 9.3% of quality. Secondary, the time change of liquid film thickness becomes smaller with increasing the quality. It was found that the change of liquid film thickness becomes more smoothly near the dryout condition. (author)

  4. Effect of film thickness on the transport properties of MgB2 synthesized by spray pyrolysis

    International Nuclear Information System (INIS)

    Research highlights: → Thickness of film cab be easily control by spray pyrolysis. → Critical current density of film is comparable to other film synthesized by different route. → Spray pyrolysis is a simple, economic viability technique to synthesis MgB2 film. - Abstract: Polycrystalline MgB2 films of different thickness have been prepared by employing spray pyrolysis technique on MgO (1 0 0) substrate. The MgB2 and other phases have been confirmed using X-ray diffraction technique and no trace of impurities phases have been found. The resistivity behavior shows that the superconducting transition temperature lies in the range of 37-39 K with narrow transition width. The transport critical current density vary with films thickness and achieved highest value ∼1.2 x 106 A/cm2 at 20 K for 2.0 μm thick film and its values increase as thickness increases.

  5. Multifunctional thick-film structures based on spinel ceramics for environment sensors

    International Nuclear Information System (INIS)

    Temperature sensitive thick films based on spinel-type NiMn2O4-CuMn2O4-MnCo2O4 manganites with p- and p+-types of electrical conductivity and their multilayer p+-p structures were studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170 deg. C. It is shown that degradation processes connected with diffusion of metallic Ag into film grain boundaries occur in one-layer p-and p+-conductive films. Some part of the p+-p structures were of high stability, the relative electrical drift being no more than 1 %.

  6. Interference-aided spectrum fitting method for accurately film thickness determination

    CERN Document Server

    Liu, Xingxing; Xia, Hui; Zhang, Xutao; Ji, Ruonan; Li, Tianxin; Lu, Wei

    2016-01-01

    A new approach was proposed to accurately determine the thickness of film, especially for ultra-thin film, through spectrum fitting with the assistance of interference layer. The determination limit can reach even less than 1 nm. Its accuracy is far better than traditional methods. This determination method is verified by experiments and the determination limit is at least 3.5 nm compared with the results of AFM. Furthermore, double-interference-aided spectra fitting method is proposed to reduce the requirements of determination instruments, which allow one to determine the film thickness with a low precision common spectrometer and largely lower the cost. It is a very high precision determination method for on-site and in-situ applications, especially for ultra-thin films.

  7. Thick growing multilayer nanobrick wall thin films: super gas barrier with very few layers.

    Science.gov (United States)

    Guin, Tyler; Krecker, Michelle; Hagen, David Austin; Grunlan, Jaime C

    2014-06-24

    Recent work with multilayer nanocoatings composed of polyelectrolytes and clay has demonstrated the ability to prepare super gas barrier layers from water that rival inorganic CVD-based films (e.g., SiOx). In an effort to reduce the number of layers required to achieve a very low oxygen transmission rate (OTR (layer-by-layer (LbL) assembly. Buffering the chitosan solution and its rinse with 50 mM Trizma base increased the thickness of these films by an order of magnitude. The OTR of a 1.6-μm-thick, six-bilayer film was 0.009 cc/m(2)·day·atm, making this the best gas barrier reported for such a small number of layers. This simple modification to the LbL process could likely be applied more universally to produce films with the desired properties much more quickly.

  8. Multifunctional thick-film structures based on spinel ceramics for environment sensors

    Energy Technology Data Exchange (ETDEWEB)

    Vakiv, M; Hadzaman, I; Klym, H; Shpotyuk, O [Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, 79031 (Ukraine); Brunner, M, E-mail: shpotyuk@novas.lviv.ua, E-mail: klymha@yahoo.com [Fachhochschule Koeln/University of Applied Sciences, 2 Betzdorfer str., Koeln, 50679 (Germany)

    2011-04-01

    Temperature sensitive thick films based on spinel-type NiMn{sub 2}O{sub 4}-CuMn{sub 2}O{sub 4}-MnCo{sub 2}O{sub 4} manganites with p- and p{sup +}-types of electrical conductivity and their multilayer p{sup +}-p structures were studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170 deg. C. It is shown that degradation processes connected with diffusion of metallic Ag into film grain boundaries occur in one-layer p-and p{sup +}-conductive films. Some part of the p{sup +}-p structures were of high stability, the relative electrical drift being no more than 1 %.

  9. Critical detonation thickness in vapor-deposited hexanitroazobenzene (HNAB) films with different preparation conditions

    Science.gov (United States)

    Tappan, Alexander; Knepper, Robert; Marquez, Michael; Ball, J.; Miller, Jill

    2013-06-01

    At Sandia National Laboratories, we have coined the term ``microenergetics'' to describe sub-millimeter energetic material studies aimed at gaining knowledge of combustion and detonation behavior at the mesoscale. Films of the high explosive hexanitroazobenzene (HNAB) have been deposited through physical vapor deposition. HNAB deposits in an amorphous state that crystallizes over time and modest heating accelerates this crystallization. HNAB films were prepared under different crystallization temperatures, and characterized with surface profilometry and scanning electron microscopy. The critical detonation thickness for HNAB at different crystallization conditions was determined in a configuration where charge width was large compared to film thickness, and thus side losses did not play a role in detonation propagation. The results of these experiments will be discussed in the context of small sample geometry, deposited film morphology, crystal structure, and density.

  10. Electrochemical Impedance Spectroscopic Analysis of RuO2 Based Thick Film pH Sensors

    International Nuclear Information System (INIS)

    The conductimetric interdigitated thick film pH sensors based on RuO2 were fabricated and their electrochemical reactions with solutions of different pH values were studied by electrochemical impedance spectroscopy (EIS) technique. The microstructural properties and composition of the sensitive films were examined by scanning electron microscopy, X-ray energy dispersive spectroscopy and Raman spectroscopy. The EIS analysis of the sensor was carried out in the frequency range 10 mHz–2 MHz for pH values of test solutions 2–12. The electrical parameters of the sensor were found to vary with changing pH. The conductance and capacitance of the film were distinctly dependent on pH in the low frequency range. The Nyquist and Bode plots derived from the impedance data for the metal oxide thick film pH sensor provided information about the underlying electrochemical reactions

  11. Effect of film thickness on the antifouling performance of poly(hydroxy-functional methacrylates) grafted surfaces.

    Science.gov (United States)

    Zhao, Chao; Li, Lingyan; Wang, Qiuming; Yu, Qiuming; Zheng, Jie

    2011-04-19

    The development of nonfouling biomaterials to prevent nonspecific protein adsorption and cell/bacterial adhesion is critical for many biomedical applications, such as antithrombogenic implants and biosensors. In this work, we polymerize two types of hydroxy-functional methacrylates monomers of 2-hydroxyethyl methacrylate (HEMA) and hydroxypropyl methacrylate (HPMA) into polymer brushes on the gold substrate via surface-initiated atom transfer radical polymerization (SI-ATRP). We systematically examine the effect of the film thickness of polyHEMA and polyHPMA brushes on their antifouling performance in a wide range of biological media including single-protein solution, both diluted and undiluted human blood serum and plasma, and bacteria culture. Surface plasmon resonance (SPR) results show a strong correlation between antifouling property and film thickness. Too thin or too thick polymer brushes lead to large protein adsorption. Surfaces with the appropriate film thickness of ∼25-45 nm for polyHPMA and ∼20-45 nm for polyHEMA can achieve almost zero protein adsorption (thickness of ∼20-30 nm adsorb only ∼3.0 and ∼3.5 ng/cm(2) proteins, respectively, while polyHPMA brushes at a film thickness of ∼30 nm adsorb more proteins of ∼13.5 and ∼50.0 ng/cm(2), respectively. Moreover, both polyHEMA and polyHPMA brushes with optimal film thickness exhibit very low bacteria adhesion. The excellent antifouling ability and long-term stability of polyHEMA and polyHPMA brushes make them, especially for polyHEMA, effective and stable antifouling materials for usage in blood-contacting devices. PMID:21405141

  12. Electroplated Fe-Pt thick films prepared in plating baths with various pH values

    Science.gov (United States)

    Yanai, T.; Furutani, K.; Masaki, T.; Ohgai, T.; Nakano, M.; Fukunaga, H.

    2016-05-01

    Fe-Pt thick-films were electroplated on a Ta substrate using a direct current, and the effect of the pH value of the plating bath on the magnetic properties of the films was evaluated. For the films prepared from the baths with the same bath composition, the Fe composition and the thickness increased with increasing the pH value. In order to remove the effect of the change in the film composition on the magnetic properties, we controlled the film composition at approximately Fe50Pt50 or Fe60Pt40 by the change in the amount of the iron sulfate. The remanence of the annealed Fe60Pt40 films did not depend on the pH value clearly, and showed almost constant value of 0.75 T. We obtained the large coercivity of approximately 460 kA/m in the pH value from 4 to 7. Since the Fe52Pt48 film prepared at pH ≈ 4 shows much higher (BH)max value of 70 kJ/m3 than that of 57 kJ/m3 for our previously-reported Fe50Pt50 film (pH ≈ 2), we concluded that slight higher pH value than not-adjusted one (pH ≈ 2) is effective to increase the coercivity.

  13. Thickness and structure of the water film deposited from vapour on calcite surfaces

    DEFF Research Database (Denmark)

    Bohr, Jakob; Wogelius, Roy A.; Morris, Peter M.;

    2010-01-01

    Synchrotron X-ray reflectivity (SXR) was used to measure the thickness of the water film that adsorbs on a {10¯14} cleavage surface of calcite (CaCO3) in a sample chamber where relative humidity could be controlled within the range from......Synchrotron X-ray reflectivity (SXR) was used to measure the thickness of the water film that adsorbs on a {10¯14} cleavage surface of calcite (CaCO3) in a sample chamber where relative humidity could be controlled within the range from...

  14. Thickness dependent exchange bias in martensitic epitaxial Ni-Mn-Sn thin films

    Directory of Open Access Journals (Sweden)

    Anna Behler

    2013-12-01

    Full Text Available A thickness dependent exchange bias in the low temperature martensitic state of epitaxial Ni-Mn-Sn thin films is found. The effect can be retained down to very small thicknesses. For a Ni50Mn32Sn18 thin film, which does not undergo a martensitic transformation, no exchange bias is observed. Our results suggest that a significant interplay between ferromagnetic and antiferromagnetic regions, which is the origin for exchange bias, is only present in the martensite. The finding is supported by ab initio calculations showing that the antiferromagnetic order is stabilized in the phase.

  15. Effects of thickness on the statistical properties of the Barkhausen noise in amorphous films

    International Nuclear Information System (INIS)

    The statistical properties of the Barkhausen noise (BN) in thin amorphous films are studied as a function of both the nominal composition and the thickness. BN was observed in single films with nominal compositions Fe73.5Cu1Nb3Si22.5-xBx (with x=4 and 9) in the thickness range 20nm-5μm. The distributions of Barkhausen jump sizes and duration times were obtained and fitted to power laws with critical exponents τ=1.25+/-0.05 and α=1.60+/-0.05, respectively

  16. Morphology and thickness distribution of sputtered W-C-Co films deposited on differently shaped substrates

    International Nuclear Information System (INIS)

    The performance of a coated cutting tool depends on the correct coverage of all of the sample. Previous work on sputtered W-C-Co films showed the excellent wear behaviour of these films if suitable deposition conditions, particularly the substrate bias, were selected. In this work we have studied the influence of the rake face angle of a cutting insert and of the substrate bias on the morphology and on the thickness distribution of sputtered W-C-Co films. When the deposition was carried out just by one side, the best thickness distribution in the lateral face was achieved for unbiased films and large rake face angles or for biased films and small angles. The substrate bias led to worse uniformity of the thickness in the plane face and to a greater difference between thickness values in the plane and lateral faces. For the inserts coated on both sides, the lateral faces showed a uniform coverage irrespective of the rake face angle and the substrate bias used in the deposition. The morphology of the plane faces was always featureless while, in the lateral faces, less dense morphologies were obtained; the compactness degree on these faces depended on the substrate bias. (orig.)

  17. Measurements of liquid film thickness, concentration, and temperature of aqueous urea solution by NIR absorption spectroscopy

    Science.gov (United States)

    Pan, R.; Jeffries, J. B.; Dreier, T.; Schulz, C.

    2016-01-01

    A multi-wavelength near-infrared (NIR) diode laser absorption sensor has been developed and demonstrated for real-time monitoring of the thickness, solute concentration, and temperature of thin films of urea-water solutions. The sensor monitors the transmittance of three near-infrared diode lasers through the thin liquid film. Film thickness, urea mass fraction, and liquid temperature were determined from measured transmittance ratios of suitable combinations of lasers. Available laser wavelengths were selected depending on the variation of the NIR absorption spectrum of the solution with temperature and solute concentration. The spectral database was measured by a Fourier transform infrared spectrometer in the range 5500-8000 cm-1 for urea solutions between 5 and 40 wt% and temperatures between 298 and 338 K. A prototype sensor was constructed, and the sensor concept was first validated with measurements using a calibration cell providing liquid layers of variable thickness (200-1500 µm), urea mass fraction (5-40 wt%) and temperature (298-318 K). Temporal variations of film thickness and urea concentration were captured during the constant-temperature evaporation of a liquid film deposited on an optically polished heated quartz flat.

  18. Dynamic response of film thickness in spiral-groove face seals

    Science.gov (United States)

    Dirusso, E.

    1985-01-01

    Tests were performed on an inward- and an outward-pumping spiral-groove face seal to experimentally determine the film thickness response to seal seat motions and to gain insight into the effect of secondary seal friction on film thickness behavior. Film thickness, seal seat axial motion, seal frictional torque, and film axial load were recorded as functions of time. The experiments revealed that for sinusoidal axial oscillations of the seal seat, the primary ring followed the seal seat motion very well. For a skewed seal seat, however, the primary ring did not follow the seal seat motion, and load-carrying capacity was degraded. Secondary seal friction was varied over a wide range to determine its effect on film thickness dynamics. The seals were tested with ambient air at room temperature and atmospheric pressure as the fluid medium. The test speed ranged from 7000 to 20,000 rpm. Seal tangential velocity ranged from 34 to 98 m/sec (113 to 323 ft/sec).

  19. Surface functionalization by fine ultraviolet-patterning of nanometer-thick liquid lubricant films

    Science.gov (United States)

    Lu, Renguo; Zhang, Hedong; Komada, Suguru; Mitsuya, Yasunaga; Fukuzawa, Kenji; Itoh, Shintaro

    2014-11-01

    For micro/nanoscale devices, surface functionalization is essential to achieve function and performance superior to those that originate from the inherent bulk material properties. As a method of surface functionalization, we dip-coated nanometer-thick liquid lubricant films onto solid surfaces and then patterned the lubricant films with ultraviolet (UV) irradiation through a photomask. Surface topography, adhesion, and friction measurements demonstrated that the patterned films feature a concave-convex thickness distribution with thicker lubricant in the irradiated regions and a functional distribution with lower adhesion and friction in the irradiated convex regions. The pattern linewidth ranged from 100 to as fine as 0.5 μm. The surface functionalization effect of UV-patterning was investigated by measuring the water contact angles, surface energies, friction forces, and depletion of the patterned, as-dipped, and full UV-irradiated lubricant films. The full UV-irradiated lubricant film was hydrophobic with a water contact angle of 102.1°, and had lower surface energy, friction, and depletion than the as-dipped film, which was hydrophilic with a water contact angle of 80.7°. This demonstrates that UV irradiation substantially improves the surface and tribological properties of the nanometer-thick liquid lubricant films. The UV-patterned lubricant films exhibited superior surface and tribological properties than the as-dipped film. The water contact angle increased and the surface energy, friction, and depletion decreased as the pattern linewidth decreased. In particular, the 0.5-μm patterned lubricant film even showed a larger water contact angle and lower friction and depletion than the full UV-irradiated film. These indicate that UV-patterning of nanometer-thick lubricant films with a minimized linewidth has a better surface functionalization effect than full UV irradiation. Enhancement of the surface functionalization effect may be attributed to a

  20. Antiferroelectric polarization switching and dynamic scaling of energy storage: A Monte Carlo simulation

    Science.gov (United States)

    Huang, B. Y.; Lu, Z. X.; Zhang, Y.; Xie, Y. L.; Zeng, M.; Yan, Z. B.; Liu, J.-M.

    2016-05-01

    The polarization-electric field hysteresis loops and the dynamics of polarization switching in a two-dimensional antiferroelectric (AFE) lattice submitted to a time-oscillating electric field E(t) of frequency f and amplitude E0, is investigated using Monte Carlo simulation based on the Landau-Devonshire phenomenological theory on antiferroelectrics. It is revealed that the AFE double-loop hysteresis area A, i.e., the energy loss in one cycle of polarization switching, exhibits the single-peak frequency dispersion A(f), suggesting the unique characteristic time for polarization switching, which is independent of E0 as long as E0 is larger than the quasi-static coercive field for the antiferroelectric-ferroelectric transitions. However, the dependence of recoverable stored energy W on amplitude E0 seems to be complicated depending on temperature T and frequency f. A dynamic scaling behavior of the energy loss dispersion A(f) over a wide range of E0 is obtained, confirming the unique characteristic time for polarization switching of an AFE lattice. The present simulation may shed light on the dynamics of energy storage and release in AFE thin films.

  1. Image processing techniques for measuring non-uniform film thickness profiles

    Energy Technology Data Exchange (ETDEWEB)

    Nitta, S.V.; Liu, An-Hong; Plawsky, J.L.; Wayner, P.C. Jr. [Rensselaer Polytechnique Institute, Troy, NY (United States)

    1996-12-31

    The long term objective of this research program is to determine the fluid flow and drying characteristics of thin liquid/solid films using image processing techniques such as Image Analyzing Interferometry (IAI) and Image Scanning Ellipsometry (ISE). The primary purpose of this paper is to present experimental data on the effectiveness of IAI and ISE to measure nonuniform film thickness profiles. Steady-state, non-isothermal profiles of evaporating films were measured using IAI. Transient thickness profiles of a draining film were measured using ISE. The two techniques are then compared and contrasted. The ISE can be used to measure transient as well as steady-state profiles of films with thickness ranging from 1 nm to > 20 {mu}m, whereas IAI can be used to directly measure Steady-state and transient profiles of only films thicker than about 100 nm. An evaluation of the reflected intensity can be used to extend the use of the IAI below 100 nm.

  2. Influence of Thickness on the Electrical Transport Properties of Exfoliated Bi2Te3 Ultrathin Films.

    Science.gov (United States)

    Mo, D L; Wang, W B; Cai, Q

    2016-12-01

    In this work, the mechanical exfoliation method has been utilized to fabricate Bi2Te3 ultrathin films. The thickness of the ultrathin films is revealed to be several tens of nanometers. Weak antilocalization effects and Shubnikov de Haas oscillations have been observed in the magneto-transport measurements on individual films with different thickness, and the two-dimensional surface conduction plays a dominant role. The Fermi level is found to be 81 meV above the Dirac point, and the carrier mobility can reach ~6030 cm(2)/(Vs) for the 10-nm film. When the film thickness decreases from 30 to 10 nm, the Fermi level will move 8 meV far from the bulk valence band. The coefficient α in the Hikami-Larkin-Nagaoka equation is shown to be ~0.5, manifesting that only the bottom surface of the Bi2Te3 ultrathin films takes part in transport conductions. These will pave the way for understanding thoroughly the surface transport properties of topological insulators. PMID:27484860

  3. Origin of thickness dependent spin reorientation transition of B2 type FeCo alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Dongyoo [Applied Materials Physics, Department of Materials Science and Engineering, Royal Institute of Technology, SE-10044 Stockholm (Sweden); Hong, Jisang [Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of)

    2013-12-07

    We have investigated the origin of thickness dependent spin reorientation transition (SRT) of B2 type FeCo alloy using the full potential linearized augmented plane wave method. It has been reported that FeCo alloy films on various substrates show a SRT from perpendicular to in-plane magnetization at an approximate thickness of 15 monolayers (MLs). The enhanced perpendicular magnetic anisotropy in bulk FeCo is attributed to a tetragonal distortion. However, we have found that the tetragonal distortion tends to suppress the magnetocrystalline anisotropy (MCA) energy at increasing film thickness in two-dimensional structure. In contrast, the magnitude of the shape anisotropy energy increases at increasing FeCo film thickness. Interestingly, the shape anisotropy overcomes the MCA and the SRT, from perpendicular anisotropy to in-plane magnetization, which occurs at a thickness of 15 ML. Consequently, we are able to clearly understand the physical mechanism of the thickness dependent SRT in terms of the competing reactions of these two counteracting contributions.

  4. Nanoporous nickel oxide thin films and its improved electrochromic performance: Effect of thickness

    International Nuclear Information System (INIS)

    Electrochromic properties of chemically bath deposited nanoporous NiO thin films were investigated as a function of film thickness using Ni sulphate precursor, aqueous ammonia and potassium persulphate as complexing and oxidizing agents respectively. The films were characterized for their structural, morphological, optical and electrochromic properties using X-ray diffraction, scanning electron microscopy, FT-IR spectroscopy, cyclic voltammetry, chronoamperometry and optical transmittance studies. X-ray diffraction patterns show that the films are polycrystalline, consisting of NiO cubic phase. Infrared spectroscopy results show the presence of free hydroxyl ion and water in NiO thin films. SEM micrographs revealed nanoporous nature composed of interconnected nanoporous network, forming well defined 3D nano envelopes. The optical band gap energy was found to be decreased from 3.22 to 2.80 eV with increasing film thickness. The electrochromic properties of all the films were investigated in aqueous (KOH) and non aqueous (LiClO4-PC) electrolyte by means of cyclic voltammetry (CV), chronocoulometry (CC) and optical studies. The transmittance modulations or optical density differences during the coloring/bleaching process were found to be increased with the film thickness. This increment in optical differences led to an increase in coloration efficiency (CE) to about 95 cm2/C, which is two times more than that observed in KOH and response time of 2.9 s for bleaching (reduction) and 3.5 s for coloration (oxidation) observed for the film deposited at 60 min with excellent electrochemical stability up to 3000 c/b cycles in LiClO4-PC electrolyte.

  5. Nanoporous nickel oxide thin films and its improved electrochromic performance: Effect of thickness

    Energy Technology Data Exchange (ETDEWEB)

    Dalavi, D.S.; Suryavanshi, M.J.; Patil, D.S.; Mali, S.S. [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur-416004, Maharashtra (India); Moholkar, A.V. [Department of Materials Science and Engineering, Chonnam National University (Korea, Republic of); Kalagi, S.S.; Vanalkar, S.A. [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur-416004, Maharashtra (India); Kang, S.R.; Kim, J.H. [Department of Materials Science and Engineering, Chonnam National University (Korea, Republic of); Patil, P.S., E-mail: patilps_2000@yahoo.com [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur-416004, Maharashtra (India)

    2011-01-15

    Electrochromic properties of chemically bath deposited nanoporous NiO thin films were investigated as a function of film thickness using Ni sulphate precursor, aqueous ammonia and potassium persulphate as complexing and oxidizing agents respectively. The films were characterized for their structural, morphological, optical and electrochromic properties using X-ray diffraction, scanning electron microscopy, FT-IR spectroscopy, cyclic voltammetry, chronoamperometry and optical transmittance studies. X-ray diffraction patterns show that the films are polycrystalline, consisting of NiO cubic phase. Infrared spectroscopy results show the presence of free hydroxyl ion and water in NiO thin films. SEM micrographs revealed nanoporous nature composed of interconnected nanoporous network, forming well defined 3D nano envelopes. The optical band gap energy was found to be decreased from 3.22 to 2.80 eV with increasing film thickness. The electrochromic properties of all the films were investigated in aqueous (KOH) and non aqueous (LiClO{sub 4}-PC) electrolyte by means of cyclic voltammetry (CV), chronocoulometry (CC) and optical studies. The transmittance modulations or optical density differences during the coloring/bleaching process were found to be increased with the film thickness. This increment in optical differences led to an increase in coloration efficiency (CE) to about 95 cm{sup 2}/C, which is two times more than that observed in KOH and response time of 2.9 s for bleaching (reduction) and 3.5 s for coloration (oxidation) observed for the film deposited at 60 min with excellent electrochemical stability up to 3000 c/b cycles in LiClO{sub 4}-PC electrolyte.

  6. Effects of depositing temperature and film thickness on residual stress of TiN coated materials

    International Nuclear Information System (INIS)

    Large residual stress is formed in the coating of ceramic material deposited on a metal substrate because of difference in thermal expansion coefficient between the film and the substrate and of some other reasons. The residual stress greatly influences the mechanical properties of the film and the coated material. Therefore, the residual stress is one of the most important factors on evaluating the strength of coated materials. In the present investigation, we studied the residual stress in TiN film deposited on a substrate of spring steel by a multi-arc method as a function of depositing temperature and film thickness. The residual stress in the substrate layer near the interface was also investigated. The TiN film exhibited highly {111}-orientation, i.e., [111] of TiN crystals orients parallel to the surface normal of the substrate within ± 10 degrees. The residual stress in the TiN film could be evaluated by the two-exposure method with getting the lattice strains for 222 diffraction at ψ=0deg and 70.5deg determined by the relation of crystallographic orientation. The results revealed the compressive residual stress of (-5.5)-(-3.5) GPa which is very large compared with the thermal residual stress due to the thermal strain mismatch between the film and the substrate. The residual stress value was greatly depended on the depositing temperature ; it decreased with increasing temperature, and thickness of TiN film and increased with increasing film thickness. The residual stress in the substrate was compressive and below -30 MPa probably due to the implantation of Ti ions into a shallow layer of the substrate. (author)

  7. A new approach for the measurement of film thickness in liquid face seals

    OpenAIRE

    Reddyhoff, T.; Dwyer-Joyce, R.S.; Harper, P

    2008-01-01

    Face seals operate by allowing a small volume of the sealed fluid to escape and form a thin film between the contacting parts. The thickness of this film must be optimized to ensure that the faces are separated, yet the leakage is minimized. In this work the liquid film is measured using a novel ultrasonic approach with a view to developing a condition monitoring tool. The trials were performed in two stages. Initially tests were based on a lab simulation, where it was possible to compare the...

  8. Thickness-Dependent Structural and Optoelectronic Properties of In2O3 Films Prepared by Spray Pyrolysis Technique

    Science.gov (United States)

    Khan, M. A. Majeed; Khan, Wasi

    2016-08-01

    In this work, nanostructured In2O3 thin films with thickness in the range of 40-160 nm were deposited on glass substrates by the chemical spray pyrolysis technique. The microstructural, surface morphology and optical properties were investigated as a function of film thickness through x-ray diffraction, scanning electron microscopy equipped with energy dispersive spectroscopy, atomic force microscopy, Raman spectroscopy, UV-visible spectroscopy and photoluminescence measurements. The x-ray diffraction analysis showed that the deposited films were polycrystalline in nature with a cubic structure having (222) as preferred orientation. The morphological analyses of the samples exhibited uniform and smooth surface of the films with systematical increments in the surface roughness with increasing film thickness. The grain size increased from 9 nm to 13 nm with increasing film thickness. Raman spectroscopy has been employed to study the crystalline quality and the structural disorder of the films. A blue-shift in the energy band gap ( E g) from 3.74 eV to 3.98 eV was observed with the increase of film thickness. Moreover, photoluminescence peaks of the In2O3 films appeared at 443 nm and 527 nm for all films. The thickness had a substantial influence on the microstructural and optical properties as well as on the luminescence intensity of the films. The strategy presented here indicates that the prepared films could be suitable candidates for optoelectronic device applications.

  9. Effect of film thickness on the magneto-structural properties of ion beam sputtered transition metal–metalloid FeCoNbB/Si (100) alloy thin films

    Science.gov (United States)

    Gupta, Pooja; Tripathi, Yagyanidhi; Kumar, Dileep; Rai, S. K.; Gupta, Mukul; Reddy, V. R.; Svec, Peter

    2016-08-01

    The structure and magnetic properties of ion beam sputtered transition metal–metalloid FeCoNbB/Si(100) alloy thin film have been studied as a function of film thickness using complementary techniques of x-ray reflectivity (XRR), grazing incidence x-ray diffraction, and magneto optical Kerr effect. Thicknesses of the films range from ∼200 to 1500 Å. The coercivity of all the films ranges between 4 and 14 Oe, which suggests soft magnetic nature of FeCoNbB/Si thin films. Films with thickness up to 800 Å are amorphous in nature and are found to possess uniaxial magnetic anisotropy in the film plane, although no magnetic field was applied during deposition. The presence of the two fold symmetry in such amorphous thin films may be attributed to quenched-in stresses developed during deposition. Upon increasing the film thickness to ∼1200 Å and above, the structure of FeCoNbB films transforms from amorphous to partially nanocrystalline structure and has bcc-FeCo nanocrystalline phase dispersed in remaining amorphous matrix. The crystalline volume fraction (cvf) of the films is found to be proportional to the film thickness. Azimuthal angle dependence of remanence confirms the presence of in-plane four-fold anisotropy (FFA) in the crystalline film with cvf ∼75%. Synchrotron x-ray diffraction measurement using area detector suggests random orientation of crystallites and thus clearly establishes that FFA is not related to texture/cubic symmetry in such polycrystalline thin films. As supported by asymmetric Bragg diffraction measurements, the origin of FFA in such partially crystalline thin film is ascribed to the additional compressive stresses developed in the film upon crystallization. Results indicate that promising soft magnetic properties in such films can be optimized by controlling the film thickness. The revelation of controllable and tunable anisotropy suggests that FeCoNbB thin films can have potential application in electromagnetic applications.

  10. Raman spectroscopy and microstructure of the pulsed laser-treated silver-anatase thick film

    Science.gov (United States)

    Joya, Yasir F.; Joya, K. S.; Bashir, S.; Anwar, A. W.; Rafique, M. S.; Ahmed, Riaz

    2015-09-01

    The present research describes the effect of laser pulses on crystalline titanium dioxide thick film with self-adsorbed silver ions. Anatase film of up to 4 µm thickness was deposited on ITO glass by doctor-blading technique. The film was heated at 450 °C for 60 min and cooled before immersion in silver nitrate aqueous solution. After drying, films were subjected to nanosecond pulses of the excimer laser, and their structural, microstructural and optical properties were investigated. Scanning electron microscopy and EDX analysis revealed the formation of silver nanoparticles (SNPs) dispersed in the anatase matrix. There was no significant change in the anatase structure as revealed by Raman spectroscopy. The intensity of Raman signals from pristine anatase film was increased after the laser treatment of silver ions on the film. This observation is associated with the phenomenon of localized surface plasmon resonance conferred by the crystalline SNPs. The results obtained by the UV-visible spectroscopy also support the role of SNPs to enhance the photoabsorption of the anatase film in the visible region.

  11. Amorphous/microcrystalline transition of thick silicon film deposited by PECVD

    Science.gov (United States)

    Elarbi, N.; Jemaï, R.; Outzourhit, A.; Khirouni, K.

    2016-06-01

    Thick silicon films were deposited by plasma-enhanced chemical vapor deposition at different plasma power densities. Annealing treatment was performed on these deposited films. As-deposited and annealed films were characterized by X-ray diffraction, Raman scattering spectroscopy and reflectance spectroscopy. Before annealing, only the film deposited at the plasma power density of 500 mW/cm2 exhibits a diffraction peak corresponding to the (111) plane orientation. Raman spectrum of this film confirms the presence of crystalline phase. After annealing, a transition from amorphous phase to crystalline one occurs for all samples. This transition is accompanied by an increase of the crystalline fraction volume deduced from Raman spectra analysis and by a reduction of optical gap energy.

  12. Analysis of water film thickness on contact lens by reflectometry technique

    Science.gov (United States)

    Wang, Michael R.; Lu, Hui; Wang, Jianhua; Shen, Meixiao

    2011-03-01

    We report the use of optical reflectometry technique for evaluation of water film on contact lens. The water film can be measured through the spectral dependent reflectance evaluation, which is carried out by illuminating the contact lens with a white light and collecting the returning light with an optical fiber coupled to a spectrometer. Water film thinning process has been observed on different soft contact lenses and minimum measurable thickness is about 0.85 μm. The measurement is fast and accurate. The water film measurement can be valuable for contact lens design to improve its hydrophilic properties. The technique can be extended for the study of tear film dynamics in an eye.

  13. Dependence of resistivity of electrodeposited Ni single layer and Ni/Cu multilayer thin films on the film thickness, and electron mean free path measurements of these films

    Directory of Open Access Journals (Sweden)

    Gholamreza Nabiyouni

    2007-09-01

    Full Text Available   The Boltzmann equation is a semiclassical approach to the calculation of the electrical conductivity. In this work we will first introduce a simple model for calculation of thin film resistivity and show that in an appropriate condition the resistivity of thin films depends on the electron mean free path, so that studying and measurement of thin films resistivity as a function of film thickness would lead to calculation of the electron mean free path in the films. Ni single layers and Ni/Cu multilayers were grown using electrodeposition technique in potentiostatic mode. The films also characterized using x-ray diffraction technique and the results show at least in the growth direction, the films were grown epitaxially and follow their substrate textures.

  14. Dielectric response of fully and partially depleted ferroelectric thin films and inversion of the thickness effect

    Science.gov (United States)

    Misirlioglu, I. B.; Yildiz, M.

    2013-03-01

    We study the effect of full and partial depletion on the dielectric response characteristics of ferroelectric thin films with impurities via a computational approach. Using a thermodynamic approach along with the fundamental equations for semiconductors, we show that films with partial depletion display unique features and an enhanced dielectric response compared with those fully depleted. We find that the capacitance peak at switching can be significantly suppressed in the case of high impurity densities (>1025 m-3) with relatively low ionization energy, of the order of 0.5 eV. For conserved number of species in films, electromigration of ionized impurities at room temperature is negligible and has nearly no effect on the dielectric response. In films with high impurity density, the dielectric response at zero bias is enhanced with respect to charge-free films or those with relatively low impurity density (characteristics at low and high bias and that the thickness effect probed in experiments in ferroelectric thin films could be entirely inverted in thin films with depletion charges where a higher dielectric response can be measured in thicker films. Therefore, depletion charge densities in ferroelectric thin films should be estimated before size-effect-related studies. Finally, we noted that these findings are in good qualitative agreement with dielectric measurements carried out on PbZrxTi1-xO3.

  15. Full-field optical thickness profilometry of semitransparent thin films with transmission densitometry

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Jay; Harris, Tequila

    2010-05-20

    A novel bidirectional thickness profilometer based on transmission densitometry was designed to measure the localized thickness of semitransparent films on a dynamic manufacturing line. The densitometer model shows that, for materials with extinction coefficients between 0.3 and 2.9 D/mm, 100-500 {mu}m measurements can be recorded with less than {+-}5% error at more than 10,000 locations in real time. As a demonstration application, the thickness profiles of 75 mmx100 mm regions of polymer electrolyte membrane (PEM) were determined by converting the optical density of the sample to thickness with the Beer-Lambert law. The PEM extinction coefficient was determined to be 1.4 D/mm, with an average thickness error of 4.7%.

  16. Retention of Root Canal Posts: Effect of Cement Film Thickness, Luting Cement, and Post Pretreatment.

    Science.gov (United States)

    Sahafi, A; Benetti, A R; Flury, S; Peutzfeldt, A

    2015-01-01

    The aim of this study was to investigate the effect of the cement film thickness of a zinc phosphate or a resin cement on retention of untreated and pretreated root canal posts. Prefabricated zirconia posts (CosmoPost: 1.4 mm) and two types of luting cements (a zinc phosphate cement [DeTrey Zinc] and a self-etch adhesive resin cement [Panavia F2.0]) were used. After removal of the crowns of 360 extracted premolars, canines, or incisors, the root canals were prepared with a parallel-sided drill system to three different final diameters. Half the posts did not receive any pretreatment. The other half received tribochemical silicate coating according to the manufacturer's instructions. Posts were then luted in the prepared root canals (n=30 per group). Following water storage at 37°C for seven days, retention of the posts was determined by the pull-out method. Irrespective of the luting cement, pretreatment with tribochemical silicate coating significantly increased retention of the posts. Increased cement film thickness resulted in decreased retention of untreated posts and of pretreated posts luted with zinc phosphate cement. Increased cement film thickness had no influence on retention of pretreated posts luted with resin cement. Thus, retention of the posts was influenced by the type of luting cement, by the cement film thickness, and by the post pretreatment. PMID:25764045

  17. Thick-film amperometric zirconia oxygen sensors: influence of cobalt oxide as a sintering aid

    International Nuclear Information System (INIS)

    Amperometric thick-film zirconia oxygen sensors are electrochemical devices in which the zirconia thick-film acts as both electrolyte and diffusion barrier. Their preparation involves temperatures of 1300–1400 °C to sinter the thick-film and reduce the through-porosity to a sufficiently low value to restrict oxygen diffusion rates and hence sensor limiting currents. The resulting sensors normally require an operating temperature of 800 °C to enable operation in the percentage oxygen concentration range. In this work sensors were prepared with and without doping with cobalt oxide. Thick-films were characterized using scanning electron microscopy to view a fracture edge and by plotting current–voltage curves of the prepared sensors operated at 600–800 °C in oxygen concentrations up to 21% at atmospheric pressure. It was found that doping with cobalt oxide markedly increased the sintering rate and enabled a reduction of 100–110 °C in sintering temperature for a given final through-porosity. As a result it was possible to operate doped sensors at a temperature around 200 °C lower than otherwise identically-prepared undoped sensors. This is expected to have a beneficial effect on sensor life and reduce operating power. (paper)

  18. Neutron methods for the direct determination of the magnetic induction in thick films

    OpenAIRE

    Kozhevnikov, S. V.; Ott, F.; Radu, F.

    2015-01-01

    We review different neutron methods which allow extracting directly the value of the magnetic induction in thick films: Larmor precession, Zeeman spatial beam-splitting and neutron spin resonance. Resulting parameters obtained by the neutron methods and standard magnetometry technique are presented and compared. The possibilities and specificities of the neutron methods are discussed.

  19. Thickness-Gradient Films for High Gauge Factor Stretchable Strain Sensors.

    Science.gov (United States)

    Liu, Zhiyuan; Qi, Dianpeng; Guo, Peizhi; Liu, Yan; Zhu, Bowen; Yang, Hui; Liu, Yaqing; Li, Bin; Zhang, Chenguang; Yu, Jiancan; Liedberg, Bo; Chen, Xiaodong

    2015-10-28

    High-gauge-factor stretchable strain sensors are developed by utilizing a new strategy of thickness-gradient films with high durability, and high uniaxial/isotropic stretchability based on the self-pinning effect of SWCNTs. The monitoring of detailed damping vibration modes driven by weak sound based on such sensors is demonstrated, making a solid step toward real applications. PMID:26376000

  20. CO responses of sensors based on cerium oxide thick films prepared from clustered spherical nanoparticles.

    Science.gov (United States)

    Izu, Noriya; Matsubara, Ichiro; Itoh, Toshio; Akamatsu, Takafumi; Shin, Woosuck

    2013-03-08

    Various types of CO sensors based on cerium oxide (ceria) have been reported recently. It has also been reported that the response speed of CO sensors fabricated from porous ceria thick films comprising nanoparticles is extremely high. However, the response value of such sensors is not suitably high. In this study, we investigated methods of improving the response values of CO sensors based on ceria and prepared gas sensors from core-shell ceria polymer hybrid nanoparticles. These hybrid nanoparticles have been reported to have a unique structure: The core consists of a cluster of ceria crystallites several nanometers in size. We compared the characteristics of the sensors based on thick films prepared from core-shell nanoparticles with those of sensors based on thick films prepared from conventionally used precipitated nanoparticles. The sensors prepared from the core-shell nanoparticles exhibited a resistance that was ten times greater than that of the sensors prepared from the precipitated nanoparticles. The response values of the gas sensors based on the core-shell nanoparticles also was higher than that of the sensors based on the precipitated nanoparticles. Finally, improvements in sensor response were also noticed after the addition of Au nanoparticles to the thick films used to fabricate the two types of sensors.

  1. Thin-film thickness measurement using x-ray peak ratioing in the scanning electron microscope

    International Nuclear Information System (INIS)

    The procedure used to measure laser target film thickness using a scanning electron microscope is summarized. This method is generally applicable to any coating on any substrate as long as the electron energy is sufficient to penetrate the coating and the substrate produces an x-ray signal which can pass back through the coating and be detected

  2. Sputtering of thin and intermediately thick films of solid deuterium by keV electrons

    DEFF Research Database (Denmark)

    Svendsen, Winnie Edith; Thestrup Nielsen, Birgitte; Schou, Jørgen;

    1995-01-01

    Sputtering of films of solid deuterium by keV electrons was studied in a cryogenic set-up. The sputtering yield shows a minimum yield of about 4 D2/electron for 1.5 and 2 keV electrons at a thickness slightly larger than the average projected range of the electrons. We suggest that the yield around...

  3. Control-monitoring systems of environment temperature and humidity based on oxyspinel thick films

    Directory of Open Access Journals (Sweden)

    Vakiv N. M.

    2010-02-01

    Full Text Available The possibility to use planar-type multilayer thick-film structures based on manganite CuxNi1–x–yCo2yMn2–yO4 and aluminate MgAl2O4 spinel oxide ceramics as integrated temperature-humidity sensors for environmental control-monitoring systems is analysed.

  4. A study of some production parameter effects on the resistance-temperature characteristics of thick film strain gauges

    International Nuclear Information System (INIS)

    Experiments aimed at investigating the possible factors affecting the temperature performance of thick-film resistors are presented. Particular emphasis is given to the temperature coefficient of resistance (TCR) of thick film strain gauges printed on both alumina and stainless steel substrates. The results confirmed that the resistance versus temperature curve is nearly parabolic, but showed that Tmin, the temperature at which the TCR changes to zero, is largely affected by the choice of resistor and substrate materials and also the thickness of the thick-film resistors. A possible explanation is proposed for the observed relationship between resistor thickness and TCR. Other factors, such as the thickness of the substrates, the choice of conductor materials, and whether single- or double-sided printing of the substrate was employed in fabrication were found to make little difference to the temperature performance of the thick-film resistors. (author)

  5. Thickness-dependent structural investigation of thin GaN films by photoelectron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Raisch, Christoph; Sidorenko, Alexey; Peisert, Heiko; Chasse, Thomas [University of Tuebingen, Institute of Physical Chemistry (Germany)

    2008-07-01

    Thin films of hexagonal gallium nitride have been grown on 6H-SiC by ion-beam assisted MBE. The thickness ranges from submonolayers to bulk-like samples of more than 100 monolayers. The samples were characterised by XPS, LEED and XPD. During growth, two different types of wetting layers were observed (i) a Ga metal wetting layer on the SiC substrate and (ii) a Ga metal wetting layer on top of the growing GaN film. They prove essential for the spreading wetting growth mechanism and were used to derive interface electronic parameters of the Ga/SiC and Ga/GaN Schottky barriers. The substrate and the films have been examined by x-ray photoelectron diffraction XPD, a method capable of determining the local atomic structure of crystalline materials. By choosing different photoemission lines, the environments of gallium and nitrogen have been investigated separately and are compared to each other. The differences between Ga2p and Ga3d emission have been evaluated, with Ga3d photoelectrons being bulk sensitive while Ga2p photoelectrons are probing the surface. Features evolving with thickness are identified and interpreted. The experiments are supported by multiple scattering cluster calculations, showing clear trends with increasing film thickness. The simulations also allow the determination of the polarity of the films, which is found to be Ga-terminated for all samples.

  6. Determination of the solvation film thickness of dispersed particles with the method of Einstein viscosity equation

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    The dispersion of a solid particle in a liquid may lead to the formation of solvation film onthe particle surface, which can strongly increase the repulsive force between particles and thus strongly affect the stability of dispersions. The solvation film thickness, which varies with the variation of the property of suspension particles and solutions, is one of the most important parameters of the solvation film, and is also one of the most difficult parameters that can be measured accurately. In this paper, a method, based on the Einstein viscosity equation of dispersions, for determining the solvation film thickness of particles is developed. This method was tested on two kinds of silica spherical powders (namely M1 and M2) dispersed in ethyl alcohol, in water, and in a water-ethyl alcohol mixture (1:1 by volume) through measuring the relative viscosity of dispersions of the particles as a function of the volume fraction of the dry particles in the dispersion, and of the specific surface area and the density of the particles. The calculated solvation film thicknesses on M1 are 7.48, 18.65 and 23.74 nm in alcohol, water and the water-ethyl alcohol mixture, 12.41, 12.71 and 13.13 nm on M2 in alcohol, water and the water-ethyl alcohol mixture, respectively.

  7. Self-assembled artificial pinning centres in thick YBCO superconducting films

    Science.gov (United States)

    Mikheenko, P.; Abell, J. S.; Sarkar, A.; Dang, V. S.; Awang Kechik, M. M.; Tanner, J. L.; Paturi, P.; Huhtinen, H.; Babu, N. Hari; Cardwell, D. A.; Crisan, A.

    2010-06-01

    Strong, artificial pinning centres are required in superconducting films of large thickness for power applications in high magnetic fields. One of the methods for the introduction of pinning centres in such films is substrate decoration, i.e., growing nanoscale islands of certain materials on the substrate prior to the deposition of the superconducting film. Two other methods are building up a layered distribution of a second phase and homogeneous incorporation of second phase inclusions from a compositional target. In this paper, we compare the effectiveness of these methods in terms of the type of the self-assembly of nanoparticles. The comparison is made over a large set of YBa2Cu3O7 films of thickness up to 6.6 μm deposited with Au, Ag, Pd, LaNiO3, PrBa2Cu3O7, YBCO, BaZrO3 and Gd2Ba4CuWOy nanoparticles. It is found that substrate-decoration self-assembly is able to provide higher critical current in low magnetic field than the incorporation of homogeneous second phase in the sample microstructure. By specific modification of substrate decoration we achieved the self-field critical current per centimetre of width of 896 A/cm at 77.3 K and 1620 A/cm at 65 K in a film of thickness of 4.8 μm.

  8. Thickness effect on magnetocrystalline anisotropy of Co/Pd(111) films: A density functional study

    Energy Technology Data Exchange (ETDEWEB)

    Jekal, Soyoung; Rhim, S. H., E-mail: sonny@ulsan.ac.kr, E-mail: schong@ulsan.ac.kr; Kwon, Oryong; Hong, Soon Cheol, E-mail: sonny@ulsan.ac.kr, E-mail: schong@ulsan.ac.kr [Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of)

    2015-05-07

    In this study, we carried out first-principles calculations on magnetocrystalline anisotropy (MCA) of Co/Pd thin films by adopting two different systems of (i) n-Co/3-Pd and (ii) n-Pd/3-Co. In one system, we vary the thickness of Co layer, fixing the thickness of the Pd layer to 3-monolayers, and in the other system vice versa. MCA is mainly governed by the surface and interface Co atoms, while contributions from other Co atoms are smaller. MCA energy (E{sub MCA}) of the Co/Pd thin film shows oscillatory behavior with the thickness of the Co layer, but is insensitive to the thickness of the Pd layer. In particular, the n-Co/3-Pd films of n = 2, 4, and 6 exhibit strong perpendicular MCA of about 1 meV. Our results suggest that controlling the thickness of the Co layer in Co/Pd (111) is crucial in achieving strong perpendicular MCA.

  9. Magnetic relaxation due to spin pumping in thick ferromagnetic films in contact with normal metals

    Science.gov (United States)

    Rezende, S. M.; Rodríguez-Suárez, R. L.; Azevedo, A.

    2013-07-01

    Spin pumping is the most important magnetic relaxation channel in ultrathin ferromagnetic layers in contact with normal metals (NMs). Recent experiments indicate that in thick films of insulating yttrium iron garnet (YIG) there is a large broadening of the ferromagnetic resonance (FMR) lines with deposition of a thin Pt layer which cannot be explained by the known damping processes. Here we present a detailed study of the magnetic relaxation due to spin pumping in bilayers made of a ferromagnetic material (FM) and a NM. Two alternative approaches are used to calculate the transverse and longitudinal relaxation rates used in the Bloch-Bloembergen formulation of damping. In one we consider that the dynamic exchange coupling at the interface transfers magnetic relaxation from the heavily damped conduction electron spins in the NM layer to the magnetization of the FM layer while the other utilizes spin currents and the concept of the spin-mixing conductance at the interface. While in thin FM films, the relaxation rates vary with the inverse of the FM layer thickness; in thick films, they become independent of the thickness because in the FM/NM structure the FMR excitation has a surface mode character. Regardless of the thickness range the longitudinal relaxation rate is twice the transverse rate resulting in damping of the magnetization with constant amplitude characterizing a Gilbert process. The enhanced spin-pumping damping explains the experimental observations in YIG/Pt bilayers.

  10. Method and system using power modulation and velocity modulation producing sputtered thin films with sub-angstrom thickness uniformity or custom thickness gradients

    Science.gov (United States)

    Montcalm, Claude; Folta, James Allen; Walton, Christopher Charles

    2003-12-23

    A method and system for determining a source flux modulation recipe for achieving a selected thickness profile of a film to be deposited (e.g., with highly uniform or highly accurate custom graded thickness) over a flat or curved substrate (such as concave or convex optics) by exposing the substrate to a vapor deposition source operated with time-varying flux distribution as a function of time. Preferably, the source is operated with time-varying power applied thereto during each sweep of the substrate to achieve the time-varying flux distribution as a function of time. Preferably, the method includes the steps of measuring the source flux distribution (using a test piece held stationary while exposed to the source with the source operated at each of a number of different applied power levels), calculating a set of predicted film thickness profiles, each film thickness profile assuming the measured flux distribution and a different one of a set of source flux modulation recipes, and determining from the predicted film thickness profiles a source flux modulation recipe which is adequate to achieve a predetermined thickness profile. Aspects of the invention include a computer-implemented method employing a graphical user interface to facilitate convenient selection of an optimal or nearly optimal source flux modulation recipe to achieve a desired thickness profile on a substrate. The method enables precise modulation of the deposition flux to which a substrate is exposed to provide a desired coating thickness distribution.

  11. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    Science.gov (United States)

    Wang, Qi; Stradins, Paul; Teplin, Charles; Branz, Howard M.

    2009-10-13

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  12. Cellular-foam polypropylene ferroelectrets with increased film thickness and reduced resonance frequency

    Science.gov (United States)

    Sborikas, Martynas; Wegener, Michael

    2013-12-01

    Ferroelectrets are piezoelectric materials suitable for acoustic applications such as airborne ultrasonic transducers. Typical ferroelectrets exhibit resonance frequencies in the high kHz to low MHz range. In order to decrease the transducer resonance frequencies to the low kHz range, processes such as gas-diffusion expansion and electric charging were adjusted to cellular films which are initially twice as thick as in earlier studies. The demonstrated film expansion and electric charging lead to mechanically soft cellular structures which show high piezoelectric activities with coefficients up to 130 pC/N. Due to the simultaneously increased film thicknesses, the resonance frequencies are lowered down to about 233 kHz.

  13. Determination of Optical Constant and Thickness for Thin Film by Using Improved FTM

    Institute of Scientific and Technical Information of China (English)

    CHEN Qian; XIE Yi; CHEN Gong-jing; ZHANG Wei

    2006-01-01

    A new method to determine the optical constant and thickness of thin films is proposed. Based on the Fresnel's optical expression,the improved flexible tolerance method(FTM) is employed in the case of a digital model of thin film to fit the curve of measured reflectance spectrum. The simulation results show a satisfactory correlation of the optical constant with the thickness of the target film. By taking the influence of nonlinear condition into account as well as more direct and indirect limitation,the precision and value-searching efficiency have been improved. Furthermore,the problem of dimension degradation,which exists in "Downhill Simplex",has been successfully avoided. No initial input is needed for the procedure of optimization to achieve optical solution,which makes the whole processing of value calculation much more convenient and efficient.

  14. Y-Ba-Cu-O thick films prepared by electrophoresis on silver substrates

    International Nuclear Information System (INIS)

    In the present paper some preliminary results obtained by the electrophoretic preparation of YBCO thick films are given. Films about 5μm in thickness have been deposited on silver substrates and have been characterized by XRD, SEM and electrical measurements. The critical temperature is near 89 K, whereas values of Jc at 77 K and in zero field in the range of 1000 A/cm2 have been achieved. The relatively high transport properties have been ascribed to the fine grain dimensions of the films (less than 1 μm) which result in a good intergrain continuity and in a c-axis texturing of samples perpendicular to their surface

  15. Field-Assisted and Thermionic Contributions to Conductance in SnO Thick-Films

    Directory of Open Access Journals (Sweden)

    C. Malagù

    2009-01-01

    Full Text Available A deep analysis of conductance in nanostructured SnO2 thick films has been performed. A model for field-assisted thermionic barrier crossing is being proposed to explain the film conductivity. The model has been applied to explain the behavior of resistance in vacuum of two sets of nanostructured thick-films with grains having two well-distinct characteristic radii (=25 nm and =125 nm. In the first case the grain radius is shorter than the depletion region width, a limit at which overlapping of barriers takes place, and in the second case it is longer. The behavior of resistance in the presence of dry air has been explained through the mechanism of barrier modulation through gas chemisorption.

  16. Hard X-rays for processing hybrid organic-inorganic thick films.

    Science.gov (United States)

    Jiang, Yu; Carboni, Davide; Pinna, Alessandra; Marmiroli, Benedetta; Malfatti, Luca; Innocenzi, Plinio

    2016-01-01

    Hard X-rays, deriving from a synchrotron light source, have been used as an effective tool for processing hybrid organic-inorganic films and thick coatings up to several micrometres. These coatings could be directly modified, in terms of composition and properties, by controlled exposure to X-rays. The physico-chemical properties of the coatings, such as hardness, refractive index and fluorescence, can be properly tuned using the interaction of hard X-rays with the sol-gel hybrid films. The changes in the microstructure have been correlated especially with the modification of the optical and the mechanical properties. A relationship between the degradation rate of the organic groups and the rise of fluorescence from the hybrid material has been observed; nanoindentation analysis of the coatings as a function of the X-ray doses has shown a not linear dependence between thickness and film hardness.

  17. Film thickness effect on the performance of small molecular solar cell

    Institute of Scientific and Technical Information of China (English)

    LIN Hui; YU Jun-sheng; HUANG Jiang; JIANG Ya-dong

    2008-01-01

    An efficient organic photovoltaic (OPV) cell with an indium-tin-oxide/CuPc/C60/Ag structure has been investigated by changing the film thickness of organic layers. A high open-circuit voltage (Voc) of 0.5 V, a short-circuit current density (JSC) of 5.81 mA/cm2, and a high power conversion efficiency (ηp) of 1.2% were achieved at an optimum film thickness. The results demonstrate that material thickness is an important factor to cell optimization, especially for maximizing the absorption rate as well as reducing the cell resistance. Experimental results also indicate that the power conversion efficiency increases from 1.2% to 1.54% as a BCP exciton blocking layer of 10 nm is introduced.

  18. Real-time dielectric-film thickness measurement system for plasma processing chamber wall monitoring.

    Science.gov (United States)

    Kim, Jin-Yong; Chung, Chin-Wook

    2015-12-01

    An in-situ real-time processing chamber wall monitoring system was developed. In order to measure the thickness of the dielectric film, two frequencies of small sinusoidal voltage (∼1 V) signals were applied to an electrically floated planar type probe, which is positioned at chamber wall surface, and the amplitudes of the currents and the phase differences between the voltage and current were measured. By using an equivalent sheath circuit model including a sheath capacitance, the dielectric thickness can be obtained. Experiments were performed in various plasma condition, and reliable dielectric film thickness was obtained regardless of the plasma properties. In addition, availability in commercial chamber for plasma enhanced chemical vapor deposition was verified. This study is expected to contribute to the control of etching and deposition processes and optimization of periodic maintenance in semiconductor manufacturing process.

  19. Analysis of variance on thickness and electrical conductivity measurements of carbon nanotube thin films

    Science.gov (United States)

    Li, Min-Yang; Yang, Mingchia; Vargas, Emily; Neff, Kyle; Vanli, Arda; Liang, Richard

    2016-09-01

    One of the major challenges towards controlling the transfer of electrical and mechanical properties of nanotubes into nanocomposites is the lack of adequate measurement systems to quantify the variations in bulk properties while the nanotubes were used as the reinforcement material. In this study, we conducted one-way analysis of variance (ANOVA) on thickness and conductivity measurements. By analyzing the data collected from both experienced and inexperienced operators, we found some operation details users might overlook that resulted in variations, since conductivity measurements of CNT thin films are very sensitive to thickness measurements. In addition, we demonstrated how issues in measurements damaged samples and limited the number of replications resulting in large variations in the electrical conductivity measurement results. Based on this study, we proposed a faster, more reliable approach to measure the thickness of CNT thin films that operators can follow to make these measurement processes less dependent on operator skills.

  20. Novel method for the measurement of liquid film thickness during fuel spray impingement on surfaces.

    Science.gov (United States)

    Henkel, S; Beyrau, F; Hardalupas, Y; Taylor, A M K P

    2016-02-01

    This paper describes the development and application of a novel optical technique for the measurement of liquid film thickness formed on surfaces during the impingement of automotive fuel sprays. The technique makes use of the change of the light scattering characteristics of a metal surface with known roughness, when liquid is deposited. Important advantages of the technique over previously established methods are the ability to measure the time-dependent spatial distribution of the liquid film without a need to add a fluorescent tracer to the liquid, while the measurement principle is not influenced by changes of the pressure and temperature of the liquid or the surrounding gas phase. Also, there is no need for non-fluorescing surrogate fuels. However, an in situ calibration of the dependence of signal intensity on liquid film thickness is required. The developed method can be applied to measure the time-dependent and two-dimensional distribution of the liquid fuel film thickness on the piston or the liner of gasoline direct injection (GDI) engines. The applicability of this technique was evaluated with impinging sprays of several linear alkanes and alcohols with different thermo-physical properties. The surface temperature of the impingement plate was controlled to simulate the range of piston surface temperatures inside a GDI engine. Two sets of liquid film thickness measurements were obtained. During the first set, the surface temperature of the plate was kept constant, while the spray of different fuels interacted with the surface. In the second set, the plate temperature was adjusted to match the boiling temperature of each fuel. In this way, the influence of the surface temperature on the liquid film created by the spray of different fuels and their evaporation characteristics could be demonstrated.

  1. Control of thickness uniformity and grain size in graphene films for transparent conductive electrodes

    Science.gov (United States)

    Wu, Wei; Yu, Qingkai; Peng, Peng; Liu, Zhihong; Bao, Jiming; Pei, Shin-Shem

    2012-01-01

    Large-scale and transferable graphene films grown on metal substrates by chemical vapor deposition (CVD) still hold great promise for future nanotechnology. To realize the promise, one of the key issues is to further improve the quality of graphene, e.g., uniform thickness, large grain size, and low defects. Here we grow graphene films on Cu foils by CVD at ambient pressure, and study the graphene nucleation and growth processes under different concentrations of carbon precursor. On the basis of the results, we develop a two-step ambient pressure CVD process to synthesize continuous single-layer graphene films with large grain size (up to hundreds of square micrometers). Scanning electron microscopy and Raman spectroscopy characterizations confirm the film thickness and uniformity. The transferred graphene films on cover glass slips show high electrical conductivity and high optical transmittance that make them suitable as transparent conductive electrodes. The growth mechanism of CVD graphene on Cu is also discussed, and a growth model has been proposed. Our results provide important guidance toward the synthesis of high quality uniform graphene films, and could offer a great driving force for graphene based applications.

  2. Control of thickness uniformity and grain size in graphene films for transparent conductive electrodes

    International Nuclear Information System (INIS)

    Large-scale and transferable graphene films grown on metal substrates by chemical vapor deposition (CVD) still hold great promise for future nanotechnology. To realize the promise, one of the key issues is to further improve the quality of graphene, e.g., uniform thickness, large grain size, and low defects. Here we grow graphene films on Cu foils by CVD at ambient pressure, and study the graphene nucleation and growth processes under different concentrations of carbon precursor. On the basis of the results, we develop a two-step ambient pressure CVD process to synthesize continuous single-layer graphene films with large grain size (up to hundreds of square micrometers). Scanning electron microscopy and Raman spectroscopy characterizations confirm the film thickness and uniformity. The transferred graphene films on cover glass slips show high electrical conductivity and high optical transmittance that make them suitable as transparent conductive electrodes. The growth mechanism of CVD graphene on Cu is also discussed, and a growth model has been proposed. Our results provide important guidance toward the synthesis of high quality uniform graphene films, and could offer a great driving force for graphene based applications. (paper)

  3. A computer solution for the dynamic load, lubricant film thickness, and surface temperatures in spiral-bevel gears

    Science.gov (United States)

    Chao, H. C.; Baxter, M.; Cheng, H. S.

    1983-01-01

    A computer method for determining the dynamic load between spiral bevel pinion and gear teeth contact along the path of contact is described. The dynamic load analysis governs both the surface temperature and film thickness. Computer methods for determining the surface temperature, and film thickness are presented along with results obtained for a pair of typical spiral bevel gears.

  4. Thickness-dependent photocatalytic performance of nanocrystalline TiO2 thin films prepared by sol-gel spin coating

    Science.gov (United States)

    Wu, Chung-Yi; Lee, Yuan-Ling; Lo, Yu-Shiu; Lin, Chen-Jui; Wu, Chien-Hou

    2013-09-01

    TiO2 nanocrystalline thin films on soda lime glass have been prepared by sol-gel spin coating. The thin films were characterized for surface morphology, crystal structure, chemical composition, thickness, and transparency by atomic force microscopy (AFM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), ellipsometry, and UV-vis spectrophotometry. The films prepared by titanium tetraisopropoxide (TTIP) as the precursor under pH of 3.5 ± 0.5 and with calcination temperature of 450 ̊C for 3 h exhibited superior homogeneous aggregation, good optical transparency, superhydrophilicity, and reliable thickness. The effect of film thickness on the photocatalytic degradation of acid yellow 17 was investigated under UV irradiation. The photocatalytic activity was strongly correlated with the number of coatings and followed Langmuir-type kinetics. Under the same film thickness, TiO2 thin films prepared by 0.1 M TTIP exhibited more efficient photocatalytic activity than those prepared by 0.3 M TTIP. For thin films prepared by 0.1 M TTIP, the maximum specific photocatalytic activity occurred at 5 coatings with thickness of 93 ± 1 nm. A model was proposed to rationalize the dependence of the film thickness on the photocatalytic activity, which predicts the existence of an optimum film thickness.

  5. Structural, morphological, electrical, and optical properties of silver thin films of varying thickness deposited on cupric oxide

    Science.gov (United States)

    Hajakbari, Fatemeh; Shafieinejad, Farzaneh

    2016-03-01

    In this investigation, silver (Ag) films of varying thickness (25-100 nm) were grown on cupric oxide (CuO) on silicon and quartz. The CuO preparation was carried out by the thermal oxidation annealing of copper (Cu) thin films deposited by DC magnetron sputtering. The physical properties of the prepared films were studied by different techniques. Rutherford backscattering spectroscopy (RBS) analysis indicated that the Ag film thickness was about 25-100 nm. X-ray diffraction (XRD) results showed that by increasing Ag thickness, the film crystallinity was improved. Also, atomic force microscopy (AFM) and scanning electron microscopy (SEM) results demonstrated that the surface morphology and the grain size were affected by the Ag film thickness. Furthermore, the electrical resistivity of films determined by four-point probe measurements versus the Ag film thickness was discussed. A reduction in the optical band gap energy of CuO is observed from 1.51 to 1.42 eV with an increase in Ag film thickness to 40 nm in Ag/CuO films.

  6. An experimental evaluation of the Hamrock and Dowson minimum film thickness equation for fully flooded EHD point contacts

    Science.gov (United States)

    Koye, K. A.; Winer, W. O.

    1980-08-01

    Fifty-seven measurements of the minimum lubricant film separating the elastohydrodynamically lubricated point contact of a steel crowned roller and a flat sapphire disk were made by an optical interferometry technique. The data collected were used to evaluate the Hamrock and Dowson minimum EHD film thickness model over a practical range of contact ellipticity ratio where the major axis of the contact ellipse is aligned both parallel and perpendicular to the direction of motion. A statistical analysis of the measured film thickness data showed that on the average the experimental data averaged 30 percent greater film thickness than the Hamrock and Dowson model predicts.

  7. A method for thickness determination of thin films of amalgamable metals by total-reflection X-ray fluorescence

    International Nuclear Information System (INIS)

    A method for thickness determination of thin amalgamable metallic films by total-reflection X-ray fluorescence (TXRF) is presented. The peak's intensity in TXRF spectra are directly related to the surface density of the sample, i.e. to its thickness in a homogeneous film. Performing a traditional TXRF analysis on a thin film of an amalgamated metal, and determining the relative peak intensity of a specific metal line, the layer thickness can be precisely obtained. In the case of gold thickness determination, mercury and gold peaks overlap, hence we have developed a general data processing scheme to achieve the most precise results.

  8. In-situ and elementally resolved determination of the thickness uniformity of multi-ply films by confocal micro XRF.

    Science.gov (United States)

    Peng, Song; Liu, Zhiguo; Sun, Tianxi; Wang, Guangfu; Ma, Yongzhong; Ding, Xunliang

    2014-08-01

    Confocal micro X-ray fluorescence (CM-XRF) with quasi-monochromatic excitation based on polycapillary X-ray optics was used to measure the thickness of multi-ply films. The relative errors of measuring an Fe film with a thickness of 16.3 μm and a Cu film with a thickness of 24.5 μm were 7.3% and 0.4%, respectively. The non-destructive and in-situ measurement of the thickness and uniformity of multi-ply films of Cu, Fe and Ni on a silicon surface was performed. CM-XRF was convenient in in-situ and elementally resolved analysis of the thickness of multi-ply films without a cumbersome theoretical correction model. PMID:24705010

  9. Alignment of muscle precursor cells on the vertical edges of thick carbon nanotube films.

    Science.gov (United States)

    Holt, Ian; Gestmann, Ingo; Wright, Andrew C

    2013-10-01

    The development of scaffolds and templates is an essential aspect of tissue engineering. We show that thick (>0.5 mm) vertically aligned carbon nanotube films, made by chemical vapour deposition, can be used as biocompatible substrates for the directional alignment of mouse muscle cells where the cells grow on the exposed sides of the films. Ultra high resolution scanning electron microscopy reveals that the films themselves consist mostly of small diameter (10 nm) multi-wall carbon nanotubes of wavy morphology with some single wall carbon nanotubes. Our findings show that for this alignment to occur the nanotubes must be in pristine condition. Mechanical wiping of the films to create directional alignment is detrimental to directional bioactivity. Larger areas for study have been formed from a composite of multiply stacked narrow strips of nanotubes wipe-transferred onto elastomer supports. These composite substrates appear to show a useful degree of alignment of the cells.

  10. Direct electrochemical measurements inside a 2000 angstrom thick polymer film by scanning electrochemical microscopy.

    Science.gov (United States)

    Mirkin, M V; Fan, F R; Bard, A J

    1992-07-17

    An extremely small, conically shaped Pt microelectrode tip (with a radius of 30 nanometers) and the precise positioning capabilities of the scanning electrochemical microscope were used to penetrate a thin (200 nanometers) polymer film and obtain directly the standard potential and kinetic parameters of an electrode reaction within the film. The thickness of the film was determined while it was immersed in and swollen by an electrolyte solution. The film studied was the perfluorosulfonate Nafion containing Os(bpy)(3)(2+) (bpy, 2,2'-bipyridine) cast on an indium tin oxide surface. The steady-state response at the ultramicroelectrode allowed direct determination of the rate constant for heterogeneous electron transfer K(o) and the diffusion coefficient D without complications caused by transport in the liquid phase, charge exchange at the liquid-polymer interface, and resistive drop. PMID:17832832

  11. Quartz Microbalance Study of 400-angstrom Thick Films near the lambda Point

    Science.gov (United States)

    Chan, Moses H. W.

    2003-01-01

    In a recent measurement we observed the thinning of an adsorbed helium film induced by the confinement of critical fluctuations a few millikelvin below the lambda point. A capacitor set-up was used to measure this Casimir effect. In this poster we will present our measurement of an adsorbed helium film of 400 angstroms near the lambda point with a quartz microbalance. For films this thick, we must take into account the non-linear dynamics of the shear waves in the fluid. In spite of the added complications, we were able to confirm the thinning of the film due to the Casimir effect and the onset of the superfluid transition. In addition, we observe a sharp anomaly at the bulk lambda point, most likely related to critical dissipation of the first sound. This work is carried out in collaboration with Rafael Garcia, Stephen Jordon and John Lazzaretti. This work is funded by NASA's Office of Biological and Physical Research under grant.

  12. Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    Glenda Biasotto

    2011-03-01

    Full Text Available Bi0.85La0.15FeO3 (BLFO thin films were deposited on Pt(111/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.

  13. Thickness determination of large-area films of yttria-stabilized zirconia produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Pryds, N.; Christensen, Bo Toftmann; Bilde-Sørensen, Jørgen;

    2006-01-01

    of the attenuation for various values of film thickness with the program CASINO. These results have been compared with direct measurements in the SEM of the film thickness on a cross-section on one of the wafers. The results of these measurements demonstrate the ability of this technique to accurately determine......Films of yuria-stabilized zirconia (YSZ) on a polished silicon substrate of diameter up to 125 mm have been produced in a large-area pulsed laser deposition (PLD) setup under typical PLD conditions. The film thickness over the full film area has been determined by energy-dispersive Xray...... spectrometry in a scanning electron microscope (SEM) with use of a method similar to one described by Bishop and Poole. The attenuation of the electron-induced X-rays from the Si wafer by the film was monitored at a number of points along a diameter and the thickness was determined by Monte Carlo simulations...

  14. Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111 Si Substrate: The Effect of Film Thickness

    Directory of Open Access Journals (Sweden)

    Cheng-Chang Yu

    2014-01-01

    Full Text Available Indium-nitrogen codoped zinc oxide (INZO thin films were fabricated by spray pyrolysis deposition technique on n-(111 Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM and X-ray diffraction (XRD. The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002 to (101 as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1 and hole concentration around 3×1019 cm−3 can be achieved with film thickness less than 385 nm. The n-type conduction with concentration 1×1020 cm−3 is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.

  15. The damping model for sea waves covered by oil films of a finite thickness

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yanmin; ZHANG Jie; WANG Yunhua; MENG Junmin; ZHANG Xi

    2015-01-01

    In combination with a wave action balance equation, a damping model for sea waves covered by oil films of a finite thickness is proposed. The damping model is not only related to the physical parameters of the oil film, but also related to environment parameters. Meanwhile, the parametric analyses have been also conducted to understand the sensitivity of the damping model to these parameters. And numerical simulations demonstrate that a kinematic viscosity, a surface/interfacial elasticity, a thickness, and a fractional filling factor cause more significant effects on a damping ratio than the other physical parameters of the oil film. From the simulation it is also found that the influences induced by a wind speed and a wind direction are also remarkable. On the other hand, for a thick emulsified oil film, the damping effect on the radar signal induced by the reduction of an effective dielectric constant should also be taken into account. The simulated results are compared with the damping ratio evaluated by the 15 ENVISAT ASAR images acquired during the Gulf of Mexico oil spill accident.

  16. Perfect light trapping in nanoscale thickness semiconductor films with resonant back reflector and spectrum-splitting structures

    CERN Document Server

    Liu, Jiang-Tao; Yang, Wen; Li, Jun

    2014-01-01

    The optical absorption of nanoscale thickness semiconductor films on top of light-trapping structures based on optical interference effects combined with spectrum-splitting structures is theoretically investigated. Nearly perfect absorption over a broad spectrum range can be achieved in $<100$ nm thick films on top of one-dimensional photonic crystal or metal films. This phenomenon can be attributed to interference induced photonic localization, which enhances the absorption and reduces the reflection of the films. Perfect solar absorption and low carrier thermalization loss can be achieved when the light-trapping structures with wedge-shaped spacer layer or semiconductor films are combined with spectrum-splitting structures.

  17. Gradual phase transition between the smectic- C* and smectic- CA* phases and the thresholdless antiferroelectricity

    OpenAIRE

    VIJ, JAGDISH; Song, Jang-Kun; Fukuda, Atsuo

    2008-01-01

    PUBLISHED We have constructed the phase diagrams for a binary-mixture system of antiferroelectric and ferroelectric liquid-crystalline materials in both thick and thin cells. In the phase diagrams the boundary between the smectic-C* and smectic-CA * phases runs almost parallel to the temperature axis below from ca. 70 ?C down to at least ?25 ?C. The SmC*-SmCA * phase transition for a thin cell shows a large supercooling, and a gradual transition occurs near the boundary. ...

  18. (Hg, Sb)Ba2Ca2Cu3O8+δ thick films on YSZ substrates

    International Nuclear Information System (INIS)

    Superconducting thick films of (Hg, Sb)Ba2Ca2Cu3O8+δ have been fabricated on polycrystalline yttria-stabilized-zirconia substrates utilizing an Hg-free precursor film reacted with Hg vapour, released from a solid Hg source, in a sealed quartz tube. The resulting films have been studied by x-ray diffraction, scanning electron microscopy, ac susceptibility and resistance measurement techniques. A high quality Hg(Sb)-1223 superconducting thick film on YSZ can be fabricated by using a pre-melted Hg-free precursor film. The zero resistance superconducting transition temperature in the post-growth oxygenated thick film is in excess of 130 K and the transport critical current density for the film is 510 A cm-2 at 77 K. (author)

  19. Orientation and thickness dependence of magnetization at the interfacesof highly spin-polarized manganite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chopdekar, Rajesh V.; Arenholz, Elke; Suzuki, Y.

    2008-08-18

    We have probed the nature of magnetism at the surface of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films. The spin polarization of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films is not intrinsically suppressed at all surfaces and interfaces but is highly sensitive to both the epitaxial strain state as well as the substrate orientation. Through the use of soft x-ray spectroscopy, the magnetic properties of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces have been investigated and compared to bulk magnetometry and resistivity measurements. The magnetization of (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces are more bulk-like as a function of thickness whereas the magnetization at the (001)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interface is suppressed significantly below a layer thickness of 20 nm. Such findings are correlated with the biaxial strain state of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films; for a given film thickness it is the tetragonal distortion of (001) La{sub 0.7}Sr{sub 0.3}MnO{sub 3} that severely impacts the magnetization, whereas the trigonal distortion for (111)-oriented films and monoclinic distortion for (110)-oriented films have less of an impact. These observations provide evidence that surface magnetization and thus spin polarization depends strongly on the crystal surface orientation as well as epitaxial strain.

  20. Evidence for improvement of critical current by Ag in YBaCuO-Ag thick films

    Science.gov (United States)

    Dwir, B.; Kellett, B.; Mieville, L.; Pavuna, D.

    1991-04-01

    The evidence is reported for enhancement of critical current density J(c) in YBa2Cu3O(7-delta) thick films with the addition of Ag, which is correlated with improvements in structural properties. An improvement of 50 percent in J(c) (up to about 500 A/sq cm at T = 4.2 K) was obtained in films made from YBCO + 60 wt pct Ag powder, fabricated by the spin-on technique on (100) SrTiO3, which is correlated with improvements in structure. The resulting films are 10 microns thick, uniform, partially textured, and show good adherence. The critical temperature Tc is improved by the addition of Ag, and a reduction in the density of microcracks and in the amount of secondary phases in the sintered films was observed. Normal-state resistivity is reduced by almost three orders of magnitude, making these films potentially useful for electronic applications in interconnects and novel hybrid circuits.

  1. Evidence for improvement of critical current by Ag in YBaCuO-Ag thick films

    Energy Technology Data Exchange (ETDEWEB)

    Dwir, B.; Kellett, B.; Mieville, L.; Pavuna, D. (Institute of Micro- and Opto-electronics, Department of Physics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland (CH))

    1991-04-15

    The evidence is reported for enhancement of critical current density {ital J}{sub {ital c}} in YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thick films with the addition of Ag, which is correlated with improvements in structural properties. An improvement of 50% in {ital J}{sub {ital c}} (up to {similar to}500 A/cm{sup 2} at {ital T}=4.2 K) was obtained in films made from YBCO+60wt % Ag powder, fabricated by the spin-on technique on (100) SrTiO{sub 3}, which is correlated with improvements in structure. The resulting films are 10 {mu}m thick, uniform, partially textured, and show good adherence. The critical temperature {ital T}{sub {ital c}} is improved by the addition of Ag, and a reduction in the density of microcracks and in the amount of secondary phases in the sintered films was observed. Normal-state resistivity is reduced by almost three orders of magnitude, making these films potentially useful for electronic applications in interconnects and novel hybrid circuits.

  2. Development of liquid film thickness measurement technique by high-density multipoint electrodes method

    International Nuclear Information System (INIS)

    High-density multipoint electrode method was developed to measure a liquid film thickness transient on a curved surface. The devised method allows us to measure spatial distribution of liquid film with its conductance between electrodes. The sensor was designed and fabricated as a multilayer print circuit board, where electrode pairs were distributed in reticular pattern with narrow interval. In order to measure a lot of electrode pairs at a high sampling rate, signal-processing method used by the wire mesh sensor measurement system was applied. An electrochemical impedance spectrometry concludes that the sampling rate of 1000 slices/s is feasible without signal distortion by electric double layer. The method was validated with two experimental campaigns: (1) a droplet impingement on a flat film and (2) a jet impingement on a rod-shape sensor surface. In the former experiment, a water droplet having 4 mm in diameter impinged onto the 1 mm thick film layer. A visual observation study with high-speed video camera shows after the liquid impingement, the water layer thinning process was clearly demonstrated with the sensor. For the latter experiment, the flexible circuit board was bended to form a cylindrical shape to measure water film on a simulated fuel rod in bundle geometry. A water jet having 3 mm in diameter impinged onto the rod-shape sensor surface. The process of wetting area enlargement on the rod surface was demonstrated in the same manner that the video-frames showed. (author)

  3. In-situ and elementally resolved determination of the thickness uniformity of multi-ply films by confocal micro XRF

    International Nuclear Information System (INIS)

    Confocal micro X-ray fluorescence (CM-XRF) with quasi-monochromatic excitation based on polycapillary X-ray optics was used to measure the thickness of multi-ply films. The relative errors of measuring an Fe film with a thickness of 16.3 μm and a Cu film with a thickness of 24.5 μm were 7.3% and 0.4%, respectively. The non-destructive and in-situ measurement of the thickness and uniformity of multi-ply films of Cu, Fe and Ni on a silicon surface was performed. CM-XRF was convenient in in-situ and elementally resolved analysis of the thickness of multi-ply films without a cumbersome theoretical correction model. - Highlights: • Confocal micro X-ray fluorescence based on polycapillary X-ray optics was used to measure the thickness of multi-ply films. • In-situ elemental resolved measurement of multi-ply films thickness was carried out. • The uniformity of multiply films was measured and spatially resolved

  4. Impact of nitrogen doping on growth and hydrogen impurity incorporation of thick nanocrystalline diamond films

    Institute of Scientific and Technical Information of China (English)

    Gu Li-Ping; Tang Chun-Jiu; Jiang Xue-Fan; J.L.Pintob

    2011-01-01

    A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond (NCD) films produced by only adding 0.24% N2 into 4% CH4/H2 plasma, as compared to the high quality transparent microcrystalline diamond (MCD) films, grown using the same growth parameters except for nitrogen. These experimental results clearly evidence that defect formation and impurity incorporation (for example, N and H) impeding diamond grain growth is the main formation mechanism of NCD upon nitrogen doping and strongly support the model proposed in the literature that nitrogen competes with CHX (x = 1,2,3) growth species for adsorption sites.

  5. Laser-based ultrasonic generation in metal film with nanometer thickness used in ICF experiment

    International Nuclear Information System (INIS)

    The generation and detection of laser-based ultrasound were introduced. The experiment was performed. A beam of laser with pulse width of 7 ns produced by Q switch Nd : YAG was used to irradiate Al/Au/Ag metal films with thickness of 200 nm. The signal was detected by Michael interference method and transferred by Fourier method. The ultrasonic vibration frequencies excited in the sample are 32.36, 26.17 and 29.39 MHz, respectively. The work is valuable to detect nano- and micro-meter films used to ICF experiment for the future. (authors)

  6. Effect of film thickness on morphological evolution in dewetting and crystallization of polystyrene/poly(ε-caprolactone) blend films.

    Science.gov (United States)

    Ma, Meng; He, Zhoukun; Yang, Jinghui; Chen, Feng; Wang, Ke; Zhang, Qin; Deng, Hua; Fu, Qiang

    2011-11-01

    In this Article, the morphological evolution in the blend thin film of polystyrene (PS)/poly(ε-caprolactone) (PCL) was investigated via mainly AFM. It was found that an enriched two-layer structure with PS at the upper layer and PCL at the bottom layer was formed during spinning coating. By changing the solution concentration, different kinds of crystal morphologies, such as finger-like, dendritic, and spherulitic-like, could be obtained at the bottom PCL layer. These different initial states led to the morphological evolution processes to be quite different from each other, so the phase separation, dewetting, and crystalline morphology of PS/PCL blend films as a function of time were studied. It was interesting to find that the morphological evolution of PS at the upper layer was largely dependent on the film thickness. For the ultrathin (15 nm) blend film, a liquid-solid/liquid-liquid dewetting-wetting process was observed, forming ribbons that rupture into discrete circular PS islands on voronoi finger-like PCL crystal. For the thick (30 nm) blend film, the liquid-liquid dewetting of the upper PS layer from the underlying adsorbed PCL layer was found, forming interconnected rim structures that rupture into discrete circular PS islands embedded in the single lamellar PCL dendritic crystal due to Rayleigh instability. For the thicker (60 nm) blend film, a two-step liquid-liquid dewetting process with regular holes decorated with dendritic PCL crystal at early annealing stage and small holes decorated with spherulite-like PCL crystal among the early dewetting holes at later annealing stage was observed. The mechanism of this unusual morphological evolution process was discussed on the basis of the entropy effect and annealing-induced phase separation. PMID:21936570

  7. Negative dependence of surface magnetocrystalline anisotropy energy on film thickness in Co33Fe67 alloy

    Science.gov (United States)

    Wang, De-Lai; Cui, Ming-Qi; Yang, Dong-Liang; Dong, Jun-Cai; Xu, Wei

    2016-10-01

    In this work, the magnetocrystalline anisotropy energy (MAE) on the surface of Fe33Co67 alloy film is extracted from x-ray magnetic linear dichroism (XMLD) experiments. The result indicates that the surface MAE value is negatively correlated with thickness. Through spectrum calculations and analysis, we find that besides the thickness effect, another principal possible cause may be the shape anisotropy resulting from the presence of interface roughness. These two factors lead to different electron structures on the fermi surface with different exchange fields, which produces different spin-orbit interaction anisotropies. Project supported by the National Natural Science Foundation of China (Grant Nos. 11075176 and 11375131).

  8. Thickness dependence of critical current density in MgB{sub 2} films fabricated by ex situ annealing of CVD-grown B films in Mg vapor

    Energy Technology Data Exchange (ETDEWEB)

    Hanna, Mina; Salama, Kamel [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, Houston, TX 77204 (United States); Wang, Shufang; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16801 (United States); Redwing, Joan M [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16801 (United States)], E-mail: ksalama@uh.edu

    2009-01-15

    A study was performed to examine the J{sub c} behavior as a function of thickness in MgB{sub 2} films fabricated by ex situ annealing at 840 deg. C of boron films, grown by chemical vapor deposition, in Mg vapor. The film thicknesses range between 300 nm and 10 {mu}m. The values of J{sub c} range from 1.2 x 10{sup 7} A cm{sup -2} for 300 nm to 1.9 x 10{sup 5} A cm{sup -2} for 10 {mu}m film thicknesses at 20 K and self-field. The study shows that the critical current density (J{sub c}) in MgB{sub 2} films decreases with increasing film thickness, similar to that observed in YBCO-coated conductors. Moreover, our study shows that critical current (I{sub c}) reaches its maximum value of 728 A cm{sup -1} width at {approx}1 {mu}m thick MgB{sub 2} films at 20 K and self-field, which is, interestingly, the same thickness of pulsed-laser-deposited YBCO-coated conductors at which I{sub c} reaches its maximum value. The high J{sub c} values carried by our films show that the ex situ fabrication method can produce high quality MgB{sub 2} films at low processing temperatures, which is promising for RF cavity applications and coated-conductor wires and tapes.

  9. DESIGN OF FILM THICKNESS INSTRUMENT FOR FIBRE POLYMER COMPOSITES TRIBOLOGICAL EXPERIMENTS

    Directory of Open Access Journals (Sweden)

    B. F. YOUSIF

    2014-04-01

    Full Text Available New technique to measure film thickness in tribological experiments is presented in the current study. The technique is based on strain gauges circuit fixed on a lever of the block on ring (BOR machine. Conversion of strain gauge readings was made to determine the film thickness values. For testing purposes, experiments were conducted using the new machine to investigate the wear performance of glass/polyester composites. The tests were performed against aluminium counterface at different applied loads (0.5 N to 3 N for 10 minutes sliding time under wet contact conditions. From the results, the new technique highly assisted to analysis the tribological results. The SEM showed different damage features.

  10. Influence of Tm-doping on microstructure and luminescence behavior of barium strontium titanate thick films

    Energy Technology Data Exchange (ETDEWEB)

    Wang Jingyang [School of Materials Science and Engineering, Hubei University, Wuhan, 430062 (China); Zhang Tianjin, E-mail: tj65zhang@yahoo.com.cn [School of Materials Science and Engineering, Hubei University, Wuhan, 430062 (China); Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, Hubei University, Wuhan, 430062 (China); Pan Ruikun; Ma Zhijun; Wang Jinzhao [School of Materials Science and Engineering, Hubei University, Wuhan, 430062 (China)

    2012-01-15

    Tm-doped Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} thick films were prepared by the screen-printing technique on the alumina substrate. The microstructure of the Tm-doped BST thick films was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman spectroscopy, respectively. All the samples showed a typical perovskite polycrystalline structure when sintered at 1260 Degree-Sign C. The substitution behavior of Tm{sup 3+} ion in BST was found to change with increasing the Tm{sup 3+} concentration. The observed Tm-related red emission reaches the maximum at 0.2 mol% Tm{sup 3+} concentration. The effects of concentration quenching on the luminescence intensity were discussed.

  11. Overview of thick-film technology as applied to solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Firor, K.; Hogan, S.

    1980-01-01

    Thick-film technology was developed by the electronics industry as a means of fabricating components and miniature circuitry. Today, the solar cell industry is looking at screen printing as an alternate to more expensive, high-vacuum techniques in several of the production steps during the manufacture of silicon solar cells. Screen printing is already fairly well established as a means of providing electrical contact to a cell and for the formation of a back surface field. Now under investigation are the possibilities of non-noble metal contacts and protective and antireflective coatings applied to solar cells by the use of screen printing. Most exciting is the work being done in the non-silicon area on the fabrication of the active layers of a solar cell, using thick-film inks made up of II-VI semiconductors.

  12. Evaluation of Cadmium-Free Thick Film Materials on Alumina Substrates

    Energy Technology Data Exchange (ETDEWEB)

    L. H. Perdieu

    2009-09-01

    A new cadmium-free material system was successfully evaluated for the fabrication of thick film hybrid microcircuits at Honeywell Federal Manufacturing & Technologies (FM&T). The characterization involved screen printing, drying and firing two groups of resistor networks which were made using the current material system and the cadmium-free material system. Electrical, environmental and adhesion tests were performed on both groups to determine the more suitable material system. Additionally, untrimmed test coupons were evaluated to further characterize the new materials. The cadmiumfree material system did as well or better than the current material system. Therefore, the new cadmium-free material system was approved for use on production thick film product.

  13. Atmospheric pressure spatial atomic layer deposition web coating with in situ monitoring of film thickness

    International Nuclear Information System (INIS)

    Spectral reflectometry was implemented as a method for in situ thickness monitoring in a spatial atomic layer deposition (ALD) system. Al2O3 films were grown on a moving polymer web substrate at 100 °C using an atmospheric pressure ALD web coating system, with film growth of 0.11–0.13 nm/cycle. The modular coating head design and the in situ monitoring allowed for the characterization and optimization of the trimethylaluminum and water precursor exposures, purge flows, and web speed. A thickness uniformity of ±2% was achieved across the web. ALD cycle times as low as 76 ms were demonstrated with a web speed of 1 m/s and a vertical gap height of 0.5 mm. This atmospheric pressure ALD system with in situ process control demonstrates the feasibility of low-cost, high throughput roll-to-roll ALD

  14. Oil film thickness measurement using airborne laser-induced water Raman backscatter

    Science.gov (United States)

    Hoge, F. E.; Swift, R. N.

    1980-01-01

    The use of laser-induced water Raman backscatter for remote thin oil film detection and thickness measurement is reported here for the first time. A 337.1-nm nitrogen laser was used to excite the 3400-cm-1 OH stretch band of natural ocean water beneath the oil slick from an altitude of 150 m. The signal strength of the 381-nm water Raman backscatter was always observed to depress when the oil was encountered and then return to its original undepressed value after complete aircraft traversal of the floating slick. After removal of background and oil fluorescence contributions, the ratio of the depressed-to-undepressed airborne water Raman signal intensities, together with laboratory measured oil extinction coefficients, is used to calculate the oil film thickness.

  15. Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

    Science.gov (United States)

    Shao, Guang-hao; Bai, Yu-hang; Cui, Guo-xin; Li, Chen; Qiu, Xiang-biao; Geng, De-qiang; Wu, Di; Lu, Yan-qing

    2016-07-01

    Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (˜28 μm), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is taken to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.

  16. FABRICATION AND PROPERTIES OF ANTIFERROELECTRIC RAINBOW ACTUATOR

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A new type of large-displacement actuator called reduced and internally biased oxide wafer (RAINBOW) is fabricated by chemical reduction of Pb(Sn, Zr, Ti)O3(PSZT) antiferroelectric ceramics and its properties are investigated. It is found that PSZT is easily reduced and the optimal conditions for producing RAINBOW samples are determined to be 870 ℃ for 2~3 h. The antiferroelectricsferroelectrics phase transitions occur at lower field strength in RAINBOW actuators compared with normal PSZT actuators. Large axial displacements are also obtained from the RAINBOW actuator by application of electric fields exceeding the phase switching level. However, the field-induced displacement of the RAINBOW actuator is dependent on the manner of applying load on the samples.

  17. DETERMINATION OF LIQUID FILM THICKNESS FOLLOWING DRAINING OF CONTACTORS, VESSELS, AND PIPES IN THE MCU PROCESS

    Energy Technology Data Exchange (ETDEWEB)

    Poirier, M; Fernando Fondeur, F; Samuel Fink, S

    2006-06-06

    The Department of Energy (DOE) identified the caustic side solvent extraction (CSSX) process as the preferred technology to remove cesium from radioactive waste solutions at the Savannah River Site (SRS). As a result, Washington Savannah River Company (WSRC) began designing and building a Modular CSSX Unit (MCU) in the SRS tank farm to process liquid waste for an interim period until the Salt Waste Processing Facility (SWPF) begins operations. Both the solvent and the strip effluent streams could contain high concentrations of cesium which must be removed from the contactors, process tanks, and piping prior to performing contactor maintenance. When these vessels are drained, thin films or drops will remain on the equipment walls. Following draining, the vessels will be flushed with water and drained to remove the flush water. The draining reduces the cesium concentration in the vessels by reducing the volume of cesium-containing material. The flushing, and subsequent draining, reduces the cesium in the vessels by diluting the cesium that remains in the film or drops on the vessel walls. MCU personnel requested that Savannah River National Laboratory (SRNL) researchers conduct a literature search to identify models to calculate the thickness of the liquid films remaining in the contactors, process tanks, and piping following draining of salt solution, solvent, and strip solution. The conclusions from this work are: (1) The predicted film thickness of the strip effluent is 0.010 mm on vertical walls, 0.57 mm on horizontal walls and 0.081 mm in horizontal pipes. (2) The predicted film thickness of the salt solution is 0.015 mm on vertical walls, 0.74 mm on horizontal walls, and 0.106 mm in horizontal pipes. (3) The predicted film thickness of the solvent is 0.022 mm on vertical walls, 0.91 mm on horizontal walls, and 0.13 mm in horizontal pipes. (4) The calculated film volume following draining is: (a) Salt solution receipt tank--1.6 gallons; (b) Salt solution feed

  18. Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films.

    Science.gov (United States)

    Feng, Xiao; Feng, Yang; Wang, Jing; Ou, Yunbo; Hao, Zhenqi; Liu, Chang; Zhang, Zuocheng; Zhang, Liguo; Lin, Chaojing; Liao, Jian; Li, Yongqing; Wang, Li-Li; Ji, Shuai-Hua; Chen, Xi; Ma, Xucun; Zhang, Shou-Cheng; Wang, Yayu; He, Ke; Xue, Qi-Kun

    2016-08-01

    The evolution of the quantum anomalous Hall effect with the thickness of Cr-doped (Bi,Sb)2 Te3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band-bending, and ferromagnetic exchange energy. Homogeneity in ferromagnetism is found to be the key to high-temperature quantum anomalous Hall material. PMID:27166762

  19. Extraction of optical constants and thickness of nanometre scale TiO2 film

    Institute of Scientific and Technical Information of China (English)

    Yang Ying-Ge; Liu Pi-Jun; Wang Ying; Zhang Ya-Fei

    2005-01-01

    TiO2 thin filmswere deposited on glass substrates by sputtering in a conventional rf magnetron sputtering system. X-ray diffraction pattern and transmission spectrum were measured. The curves of refraction index and extinction coefficient distributions as well as the thickness of films calculated from transmission spectrum were obtained. The optimization problem was also solved using a method based on a constrained nonlinear programming algorithm.

  20. Ultrasonic transducers based on curved lead-free piezoelectric thick films for high resolution medical imaging

    OpenAIRE

    Levassort, Franck; Astafiev, Konstantin; Lou-Moeller, Rasmus; Grégoire, Jean-Marc; Nielsen, Lise; Wolny, Wanda W.; Lethiecq, Marc

    2012-01-01

    KNN-based lead free ferroelectric materials are receiving much attention due to their high electromechanical properties that make them promising candidates to replace the lead-based piezoceramics that will eventually be banned by environmental regulations in many countries over the world. Studies include the development of KNN thick films that are particularly well adapted for high frequency applications due to higher wave velocities and a dielectric constant in an acceptable range for single...

  1. Critical current density of Bi-2212 thick films processed by partial melting

    International Nuclear Information System (INIS)

    Bi2Sr2CaCu2O8+δ (Bi-2212) thick films were produced via tape casting and partial melting. The aim of the study was to investigate the influence of the different heat treatment steps on the critical current density of the films. Five processing parameters were studied: maximum densification temperature, cooling rate during crystallization, annealing time after crystallization, reduction treatment and processing atmosphere. It will also be demonstrated that the critical current density strongly depends on the sample thickness. In 20 μm thick films we achieved 20,000 A cm-2 at 77 K - 0 T and 300,000 A cm-2 at 10 K - 0 T. The critical current density at 77 K - 0 T dropped to 6200 A cm-2 in 130 μm thick films and levelled out at 3000 A cm-2 in bulk samples thicker than 500 μm. These high critical current densities were reached only using a narrow processing window. The maximum densification temperature had to be within 5 - 10 deg. C above the solidus temperature (875 deg. C). Cooling from the maximum temperature to an annealing temperature of 850 deg. C had to be around 5 to 10 deg. C h-1 and the final annealing step was prolonged up to 70 h to optimize the critical current density. All processing steps were carried out in pure oxygen (1 atm) except the last step, reduction annealing at 500 deg. C for 20 h, that was performed in nitrogen (p(O2) approx. 0.01 atm). Processing in air (p(O2) = 0.21 atm) instead of oxygen leads to strongly decreased critical current densities in the high-temperature region above 30 K. (author)

  2. Influence of doped silver on transport current characteristics of Bi(2223) thick film

    International Nuclear Information System (INIS)

    We measured the characteristics of transport current of thick films doped and undoped Ag with nominal composition Bi1.8Pb0.4Sr2Ca2Cu3Oy at applied magnetic field H parallel to ab-plane at 77K, respectively. We also measured the influence of the cooling cycles on critical current density. The results show that doping Ag strengthens the junctions between grains, while can not raise the critical current density effectively

  3. [Determination of film thickness, component and content based on glass surface by using XRF spectrometry].

    Science.gov (United States)

    Mei, Yan; Ma, Mi-Xia; Nie, Zuo-Ren

    2013-12-01

    Film thickness, component and content based on glass surface were determined by using XRF technic, measure condition and instrument work condition in every layer were set and adjusted for the best measure effect for every element. Background fundamental parameter (BG-FP) method was built up. Measure results with this method were consistent with the actual preparation course and the method could fit to production application. PMID:24611412

  4. Characterization of Thick and Thin Film SiCN for Pressure Sensing at High Temperatures

    Directory of Open Access Journals (Sweden)

    Rama B. Bhat

    2010-02-01

    Full Text Available Pressure measurement in high temperature environments is important in many applications to provide valuable information for performance studies. Information on pressure patterns is highly desirable for improving performance, condition monitoring and accurate prediction of the remaining life of systems that operate in extremely high temperature environments, such as gas turbine engines. A number of technologies have been recently investigated, however these technologies target specific applications and they are limited by the maximum operating temperature. Thick and thin films of SiCN can withstand high temperatures. SiCN is a polymer-derived ceramic with liquid phase polymer as its starting material. This provides the advantage that it can be molded to any shape. CERASET™ also yields itself for photolithography, with the addition of photo initiator 2, 2-Dimethoxy-2-phenyl-acetophenone (DMPA, thereby enabling photolithographical patterning of the pre-ceramic polymer using UV lithography. SiCN fabrication includes thermosetting, crosslinking and pyrolysis. The technology is still under investigation for stability and improved performance. This work presents the preparation of SiCN films to be used as the body of a sensor for pressure measurements in high temperature environments. The sensor employs the phenomenon of drag effect. The pressure sensor consists of a slender sensitive element and a thick blocking element. The dimensions and thickness of the films depend on the intended application of the sensors. Fabrication methods of SiCN ceramics both as thin (about 40–60 µm and thick (about 2–3 mm films for high temperature applications are discussed. In addition, the influence of thermosetting and annealing processes on mechanical properties is investigated.

  5. Thickness dependence of piezoelectric properties of BiFeO3 films fabricated using rf magnetron sputtering system

    Science.gov (United States)

    Aramaki, Masaaki; Kariya, Kento; Yoshimura, Takeshi; Murakami, Shuichi; Fujimura, Norifumi

    2016-10-01

    The piezoelectric property of BiFeO3 films prepared on a (100) LaNiO3/Si(100) substrate using an rf magnetron sputtering system was investigated for their applications in MEMS vibration energy harvesters. The X-ray diffraction profiles indicate that (100)-oriented BiFeO3 films with thicknesses from 450 to 1750 nm were obtained at a deposition temperature of 510 °C. All the films showed well-defined ferroelectric hysteresis loops at room temperature. The thickness dependence of crystallinity and electrical properties indicated that the films have a bottom layer with a high defect density. The e 31,f piezoelectric coefficient and electromechanical coupling factor (k\\text{31,f}2) increase with increasing film thickness and reach -3.2 C/m2 and 3.3%, respectively, at a thickness of 1750 nm, which is considered to be caused by the decrease in defect density.

  6. Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO3 films

    Science.gov (United States)

    Wang, Tianqi; Ganguly, Koustav; Marshall, Patrick; Xu, Peng; Jalan, Bharat

    2013-11-01

    We report on the study of the critical thickness and the strain relaxation in epitaxial SrTiO3 film grown on (La0.3Sr0.7)(Al0.65Ta0.35)O3 (001) (LSAT) substrate using the hybrid molecular beam epitaxy approach. No change in the film's lattice parameter (both the in-plane and the out-of-plane) was observed up to a film thickness of 180 nm, which is in sharp contrast to the theoretical critical thickness of ˜12 nm calculated using the equilibrium theory of strain relaxation. For film thicknesses greater than 180 nm, the out-of-plane lattice parameter was found to decrease hyperbolically in an excellent agreement with the relaxation via forming misfit dislocations. Possible mechanisms are discussed by which the elastic strain energy can be accommodated prior to forming misfit dislocations leading to such anomalously large critical thickness.

  7. Room-temperature growth of Ni-Zn-Cu ferrite/PTFE composite thick films on PET via aerosol deposition

    Science.gov (United States)

    Kim, Hyung-Jun; Kwon, Oh-Yun; Jang, Chan-Ick; Kim, Tae Kyoung; Oh, Jun Rok; Yoon, Young Joon; Kim, Jong-Hee; Nam, Song-Min; Koh, Jung-Hyuk

    2013-11-01

    Ni-Zn-Cu ferrite and Ni-Zn-Cu ferrite/poly-tetra-fluoro-ethylene (PTFE) composite-thick-films were grown at room temperature on polyethylene terephthalate (PET) sheets via aerosol deposition (AD) as a magnetic shielding sheet for near-field communication. An 80 µm-thick Ni-Zn-Cu ferrite/PTFE composite-thick-film was grown on the PET sheet when 2.0 wt. % PTFE starting powder was used. The real relative permeability µ r ' and the imaginary permeability µ r ″ of the Ni-Zn-Cu ferrite thick film were 10.1 and 2.1 at 13.56 MHz, respectively. In the case of the composite thick film, µ r ' and µ r ″ decreased to 3.9 and 1.3, respectively, at 13.56 MHz; with the addition of the PTFE.

  8. Analysis of flow development in centrifugal atomization: Part I. Film thickness of a fully spreading melt

    Science.gov (United States)

    Zhao, Y. Y.

    2004-09-01

    Centrifugal atomization of metal melts is a cost-effective process for powder production and spray deposition. The properties of the as-produced powder and deposit are determined primarily by the characteristics of the atomized droplets, which in turn are largely dependent on the flow development of the melt on the atomizer. This paper develops a model for analysing the flow development of a fully spreading melt on and off the atomizing cup. The model can be used to calculate the velocity and film thickness of the melt as a function of melt volume flow rate, cup rotation speed, cup radius and cup slope angle, as well as to predict the trajectory of the spray off the cup. The model implies that the disintegration of a fully spreading melt takes place in the region just off the cup edge and the film thickness at the cup edge is a critical factor determining the sizes of the resultant droplets. The film thickness at the cup edge is shown to decrease with decreasing volume flow rate, with increasing cup rotation speed, with increasing cup radius and with decreasing cup slope angle.

  9. Thickness dependence of microstructure in LaCaMnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gross, G.M.; Razavi, F.S.; Praus, R.B.; Habermeier, H.-U. E-mail: huh@servix.mpi-stuttgart.mpg.de

    2000-03-01

    Introducing biaxial strain in doped lanthanum manganite thin films is an excellent tool to modify the electrical and transport properties systematically by controlled changes of the microstructure on an atomic scale. We deposited La{sub 2/3}Ca{sub 1/3}MnO{sub 3} thin films onto SrTiO{sub 3} single-crystal substrates under reproducible conditions in an optimized pulsed laser deposition process. A thickness range of 40 to 500 nm was chosen for the manganite layers to investigate the variation of the average lattice parameters with thickness using X-ray diffraction. We re-investigated the samples after annealing to determine the structural aspects of the relaxation behavior of the layers. A second set of samples was prepared with an analogous in situ annealing process. AFM was applied to examine the morphology and grain size of the layers. Due to a thermally induced strain relaxation process the thicker films show a gradual approach of the out-of-plane lattice constant to the bulk ceramic value. Further relaxation could be achieved with an annealing at 900 deg. C for 1 h. Lattice parameter changes with varying thickness and annealing processes are correlated with transport and magnetic properties.

  10. A reliable control system for measurement on film thickness in copper chemical mechanical planarization system

    Science.gov (United States)

    Li, Hongkai; Qu, Zilian; Zhao, Qian; Tian, Fangxin; Zhao, Dewen; Meng, Yonggang; Lu, Xinchun

    2013-12-01

    In recent years, a variety of film thickness measurement techniques for copper chemical mechanical planarization (CMP) are subsequently proposed. In this paper, the eddy-current technique is used. In the control system of the CMP tool developed in the State Key Laboratory of Tribology, there are in situ module and off-line module for measurement subsystem. The in situ module can get the thickness of copper film on wafer surface in real time, and accurately judge when the CMP process should stop. This is called end-point detection. The off-line module is used for multi-points measurement after CMP process, in order to know the thickness of remained copper film. The whole control system is structured with two levels, and the physical connection between the upper and the lower is achieved by the industrial Ethernet. The process flow includes calibration and measurement, and there are different algorithms for two modules. In the process of software development, C++ is chosen as the programming language, in combination with Qt OpenSource to design two modules' GUI and OPC technology to implement the communication between the two levels. In addition, the drawing function is developed relying on Matlab, enriching the software functions of the off-line module. The result shows that the control system is running stably after repeated tests and practical operations for a long time.

  11. Ethanol gas sensing properties of Al2O3-doped ZnO thick film resistors

    Indian Academy of Sciences (India)

    D R Patil; L A Patil; D P Amalnerkar

    2007-12-01

    The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ethanol vapours at 300°C. Aluminium oxide grains dispersed around ZnO grains would result into the barrier height among the grains. Upon exposure of ethanol vapours, the barrier height would decrease greatly leading to drastic increase in conductance. It is reported that the surface misfits, calcination temperature and operating temperature can affect the microstructure and gas sensing performance of the sensor. The efforts are, therefore, made to create surface misfits by doping Al2O3 into zinc oxide and to study the sensing performance. The quick response and fast recovery are the main features of this sensor. The effects of microstructure and additive concentration on the gas response, selectivity, response time and recovery time of the sensor in the presence of ethanol vapours were studied and discussed.

  12. Influence of thickness on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2016-02-01

    This paper presents the influence of thickness on physical properties of polycrystalline CdTe thin films. The thin films of thickness 450 nm, 650 nm and 850 nm were deposited employing thermal vacuum evaporation technique on glass and indium tin oxide (ITO) coated glass substrates. The physical properties of these as-grown thin films were investigated employing the X-ray diffraction (XRD), source meter, UV-Vis spectrophotometer, scanning electron microscopy (SEM) coupled with energy dispersive spectroscopy (EDS). The structural analysis reveals that the films have zinc-blende cubic structure and polycrystalline in nature with preferred orientation (111). The structural parameters like lattice constant, interplanar spacing, grain size, strain, dislocation density and number of crystallites per unit area are calculated. The average grain size and optical band gap are found in the range 15.16-21.22 nm and 1.44-1.63 eV respectively and observed to decrease with thickness. The current-voltage characteristics show that the electrical conductivity is observed to decrease with thickness. The surface morphology shows that films are free from crystal defects like pin holes and voids as well as homogeneous and uniform. The EDS patterns show the presence of cadmium and tellurium elements in the as grown films. The experimental results reveal that the film thickness plays significant role on the physical properties of as-grown CdTe thin films and higher thickness may be used as absorber layer to solar cells applications.

  13. Thickness dependent electronic structure and morphology of rubrene thin films on metal, semiconductor, and dielectric substrates

    Science.gov (United States)

    Sinha, Sumona; Mukherjee, M.

    2013-08-01

    The evolution of the electronic structure and morphology of rubrene thin films on noble-metal, semiconductor and dielectric substrates have been investigated as a function of thickness of deposited films by using photoelectron spectroscopy and atomic force microscopy. The clean polycrystalline Au and Ag were used as noble-metals, whereas, H passivated and SiO2 coated Si (100) were used as semiconductors and dielectric substrates. Discussion and comparison on interface dipole, energy level alignment, and surface morphology for the four cases are presented. The formation of dipole at metallic interfaces is found to occur due to push back effect. S parameter obtained from the variation of barrier height with the change of work function of the contacting metal indicates moderately weak interaction between rubrene and the metal substrates. The thickness dependent energy level alignment of the physisorbed rubrene films on different substrates is explained by a dielectric model in terms of electrostatic screening of photo-holes or photoemission final state relaxation energy. Films on all the substrates are found to grow following Stranski-Krastnov type growth mode and are more ordered at higher coverage.

  14. Ultra-soft 100 nm thick zero Poisson's ratio film with 60% reversible compressibility

    Science.gov (United States)

    Nguyen, Chieu; Szalewski, Steve; Saraf, Ravi

    2013-03-01

    Squeezing films of most solids, liquids and granular materials causes dilation in the lateral dimension which is characterized by a positive Poisson's ratio. Auxetic materials, such as, special foams, crumpled graphite, zeolites, spectrin/actin membrane, and carbon nanotube laminates shrink, i.e., their Poisson's ratio is negative. As a result of Poisson's effect, the force to squeeze an amorphous material, such as a viscous thin film coating adhered to rigid surface increases by over million fold as the thickness decreases from 10 μm to 100 nm due to constrain on lateral deformations and off-plane relaxation. We demonstrate, ultra-soft, 100 nm films of polymer/nanoparticle composite adhered to 1.25 cm diameter glass that can be reversibly squeezed over 60% strain between rigid plates requiring (very) low stresses below 100 KPa. Unlike non-zero Poisson's ratio materials, stiffness decreases with thickness, and the stress distribution is uniform over the film as mapped electro-optically. The high deformability at very low stresses is explained by considering reentrant cellular structure found in cork and the wings of beetles that have Poisson's ratio near zero.

  15. Estimation of appropriate lubricating film thickness in ceramic-on-ceramic hip prostheses

    Science.gov (United States)

    Tauviqirrahman, M.; Muchammad, Bayuseno, A. P.; Ismail, R.; Saputra, E.; Jamari, J.

    2016-04-01

    Artificial hip prostheses, consisting of femoral head and acetabular cup are widely used and have affected the lives of many people.However, the primary issue associated with the long term performance of hip prostheses is loosening induced by excessive wear during daily activity. Therefore, an effective lubrication is necessary to significantly decrease the wear. To help understand the lubricating performance of such typical hip joint prostheses, in the present paper a hydrodynamic lubrication model based on Reynolds equationwas introduced. The material pairs of ceramic acetabular cup against ceramic femoral head was investegated.The main aim of this study is to investigate of the effect of loading on the formation of lubricating film thickness.The model of a ball-in-socket configuration was considered assuming that the cup was stationary while the ball was to rotate at a steady angular velocityvarying loads.Based on simulation result, it was found that to promote fluid film lubrication and prevent the contacting components leading to wear, the film thickness of lubricant should be determined carefully based on the load applied. This finding may have useful implication in predicting the failure of lubricating synovial fluid film and wear generation in hip prostheses.

  16. Evaluation of feasibility of measuring EHD film thickness associated with cryogenic fluids. [for space shuttle main engine bearings

    Science.gov (United States)

    Kannel, J. W.; Merriman, T. L.; Stockwell, R. D.; Dufrane, K. F.

    1983-01-01

    The feasibility of measuring elastohydrodynamic (EHD) films as formed with a cryogenic (LN2) fluid is evaluated. Modifications were made to an existing twin disk EHD apparatus to allow for disk lubrication with liquid nitrogen. This disk apparatus is equipped with an X-ray system for measuring the thickness of any lubricant film that is formed between the disks. Several film thickness experiments were conducted with the apparatus which indicate that good lubrication films are filmed with LN2. In addition to the film thickness studies, failure analyses of three bearings were conducted. The HPOTP turbine end bearings had experienced axial loads of 36,000 to 44,000 N (8,000 to 10,000 lb). High continuous radial loads were also experienced, which were most likely caused by thermal growth of the inner race. The resulting high internal loads caused race spalling and ball wear to occur.

  17. Thin-thick coexistence behavior of 8CB liquid crystalline films on silicon.

    Science.gov (United States)

    Garcia, R; Subashi, E; Fukuto, M

    2008-05-16

    The wetting behavior of thin films of 4-n-octyl-4'-cyanobiphenyl (8CB) on Si is investigated via optical and x-ray reflectivity measurement. An experimental phase diagram is obtained showing a broad thick-thin coexistence region spanning the bulk isotropic-to-nematic (T(IN)) and the nematic-to-smectic-A (T(NA)) temperatures. For Si surfaces with coverages between 47 and 72 +/- 3 nm, reentrant wetting behavior is observed twice as we increase the temperature, with separate coexistence behaviors near T(IN) and T(NA). For coverages less than 47 nm, however, the two coexistence behaviors merge into a single coexistence region. The observed thin-thick coexistence near the second-order NA transition is not anticipated by any previous theory or experiment. Nevertheless, the behavior of the thin and thick phases within the coexistence regions is consistent with this being an equilibrium phenomenon. PMID:18518487

  18. Development of Low-cost Chemical and Micromechanical Sensors Based on Thick-film,Thin-film and Electroplated Films

    Institute of Scientific and Technical Information of China (English)

    Wenmin Qu; Kurt Drescher

    2000-01-01

    Various films could be used as sensing materials or as constructional materials for the fabrication of chemical and micromechanical sensors. To illustrate this potential, three sensors fabricated by very different film deposition technologies are given as examples. The sensors are a humidity sensor in thickfilm technology, a multi-functional gas sensor in thin-film technology and a three-dimensional acceleration sensor chip manufactured by electroplating techniques. Design, fabrication and characterisation of these sensors are described in this paper.

  19. TFA-MOD (Metal Organic Deposition Using Trifluoroacetates) Films with Thickness Greater Than 1 Micron by a Single Deposition

    Science.gov (United States)

    Araki, Takeshi; Hayashi, Mariko; Fuke, Hiroyuki

    The key to obtaining films with thickness greater than 1 micron by a single TFA-MOD deposition is a crack-preventing material. The ratio of fluorine atoms to total fluorine and hydrogen atoms (RF) of the chemical is important for forming excellent superconducting films. Although hydrogen atoms lead to carbon residue, which fatally deteriorates superconducting properties of the resulting film, hydrogen atoms form strong hydrogen bonds with trifluoroacetates and have an excellent crack-prevention effect. The RF range from 0.75 to 0.96 is effective for obtaining single-coated, thick, high-critical-current-density superconducting films.

  20. Measurement of 2-dimensional local instantaneous liquid film thickness around simulated nuclear fuel rod by ultrasonic transmission technique

    International Nuclear Information System (INIS)

    An accurate knowledge of hydro-dynamic behavior of a liquid film flow on nuclear fuel rods is indispensable for analysis of the CHF under postulated loss-of-coolant-accidents in boiling water reactors. This work is concerned with a new development of ultrasonic transmission technique for film flow measurements. The technique adopted a rotating reflector, capable of measuring time-dependent spatial distribution of liquid film thickness around a simulated nuclear fuel rod. The scanning time is currently 4 ms for reconstruction of one image of the circumferential film thickness distribution. (orig.)

  1. Fabrication and characterization of annular-array, high-frequency, ultrasonic transducers based on PZT thick film

    OpenAIRE

    Wang, D; Filoux, E; Levassort, F; Lethiecq, M.; Rocks, SA; Dorey, RA

    2014-01-01

    In this work, low temperature deposition of ceramics, in combination with micromachining techniques have been used to fabricate a kerfed, annular-array, high-frequency, micro ultrasonic transducer (with seven elements). This transducer was based on PZT thick film and operated in thickness mode. The 27 μm thick PZT film was fabricated using a low temperature (720 °C) composite sol-gel ceramic (sol + ceramic powder) deposition technique. Chemical wet etching was used to pattern the PZT thick fi...

  2. Effects of CdS film thickness on the photovoltaic properties of sintered CdS/CdTe solar cells

    Science.gov (United States)

    Lee, J. S.; Jun, Y. K.; Im, H. B.

    1987-01-01

    All polycrystalline CdS/CdTe heterojunction solar cells with various thicknesses of CdS film were prepared by the coating and sintering method in an attempt to optimize the thickness of the sintered CdSfilm whose role is to be the window as well as the front contact for the CdS/CdS/CdTe solar cell. The thickness of the CdS films was varied from 14 to 55 microns by changing the screen mesh size of a screen printer and the solid-liquid ratio of the slurry which consisted of CdS powder, 9 weight percent CdCl2 and propylene glycol. Average grain size of the sintered CdS films increases and porosity decreases with an increase in film thickness. Electrical resistivity of the sintered CdS films shows a minimum value in 35-micron thick film. Highest optical transmission is observed in 20-micron thick CdS film. The CdCl2 remaining in the CdS film after the sintering causes an increase in the thickness of the CdS(1-x)Te(x) solid solution layer, acting as a sintering aid, at the interface between the CdS and the CdTe films. The combination of the optical transmission, the solid solution layer, and the sheet resistance effects resulted in the highest solar efficiency in a CdS/CdTe heterojunction solar cell with 20-micron thick CdS layer.

  3. Thickness dependence of grain growth orientation in MgB2 films fabricated by hybrid physical-chemical vapor deposition

    International Nuclear Information System (INIS)

    We have investigated the effect of thickness of the MgB2 film on the grain growth direction as well as on their superconducting properties. MgB2 films of various thicknesses were fabricated on c-cut Al2O3 substrates at a temperature of 540 degree by using hybrid physical-chemical vapor deposition (HPCVD) technique. The superconducting transition temperature (Tc) was found to increase with increase in the thickness of the MgB2 film. X-ray diffraction analysis revealed that the orientation of grains changed from c-axis to a-axis upon increasing the thickness of the MgB2 film from 0.6 to 2.0 μm. MgB2 grains of various orientations were observed in the microstructures of the films examined by scanning electron microscopy. It is observed that at high magnetic fields the 2.0-μm-thick film exhibit considerably larger critical current density (Jc) as compared to 0.6-μm-thick film. The results are discussed in terms of an intrinsic-pinning in MgB2 similarly as intrinsic-pinning occurring in high-Tc cuprate superconductors with layered structure.

  4. Ferrimagnetic Tb-Fe Alloy Thin Films: Composition and Thickness Dependence of Magnetic Properties and All-Optical Switching

    Directory of Open Access Journals (Sweden)

    Birgit eHebler

    2016-02-01

    Full Text Available Ferrimagnetic rare earth - transition metal Tb-Fe alloy thin films exhibit a variety of different magnetic properties, which depends strongly on composition and temperature. In this study, first the influence of the film thickness (5 - 85 nm on the sample magnetic properties was investigated in a wide composition range between 15 at.% and 38 at.% of Tb. From our results, we find that the compensation point, remanent magnetization, and magnetic anisotropy of the Tb-Fe films depend not only on the composition but also on the thickness of the magnetic film up to a critical thickness of about 20-30 nm. Beyond this critical thickness, only slight changes in magnetic properties are observed. This behavior can be attributed to a growth-induced modification of the microstructure of the amorphous films, which affects the short range order. As a result, a more collinear alignment of the distributed magnetic moments of Tb along the out-of-plane direction with film thickness is obtained. This increasing contribution of the Tb sublattice magnetization to the total sample magnetization is equivalent to a sample becoming richer in Tb and can be referred to as an effective composition. Furthermore, the possibility of all-optical switching, where the magnetization orientation of Tb-Fe can be reversed solely by circularly polarized laser pulses, was analyzed for a broad range of compositions and film thicknesses and correlated to the underlying magnetic properties.

  5. Friction measurements of nanometer-thick lubricant films using ultra-smooth sliding pins treated with gas cluster ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Renguo [Graduate School of Information Science, Nagoya University, Nagoya 464-8601 (Japan); Zhang, Hedong, E-mail: zhang@is.nagoya-u.ac.jp [Graduate School of Information Science, Nagoya University, Nagoya 464-8601 (Japan); Mitsuya, Yasunaga [Nagoya Industrial Science Research Institute, Nagoya 464-0035 (Japan); Fukuzawa, Kenji; Itoh, Shintaro [Graduate School of Engineering, Nagoya University, Nagoya 464-8603 (Japan)

    2013-09-01

    Friction properties of nanometer-thick lubricant films confined between two ultra-smooth solid surfaces are crucial to the practical performance of technologically advanced mechanical devices such as micro-electro-mechanical systems and hard disk drives. In this work, we applied argon gas cluster ion beam (Ar-GCIB) treatments to obtain ultra-smooth sliding pins for pin-on-disk tests of nanometer-thick perfluoropolyether (PFPE) lubricant films coated on magnetic disk surfaces. The GCIB treatments effectively smoothed the pin surfaces, and increases in the Ar dose decreased surface roughness. An ultra-smooth surface with a maximum peak height (R{sub p}) less the monolayer lubricant film thickness was achieved when the Ar dose was increased to 8 × 10{sup 16} ions/cm{sup 2}. We observed that both surface roughness and film thickness affected the friction coefficients of the PFPE films. To quantitatively describe the interplay of surface roughness and film thickness, we introduced two roughness characteristics: the ratio of film thickness to the surface’s root-mean-square roughness (h/σ), and a surface-pattern parameter (γ), defined as the ratio of correlation lengths in two orthogonal directions. We infer that a fixed γ and higher h/σlead to lower friction coefficients, while a fixed h/σand higher γ induce higher friction coefficients.

  6. Friction measurements of nanometer-thick lubricant films using ultra-smooth sliding pins treated with gas cluster ion beam

    Science.gov (United States)

    Lu, Renguo; Zhang, Hedong; Mitsuya, Yasunaga; Fukuzawa, Kenji; Itoh, Shintaro

    2013-09-01

    Friction properties of nanometer-thick lubricant films confined between two ultra-smooth solid surfaces are crucial to the practical performance of technologically advanced mechanical devices such as micro-electro-mechanical systems and hard disk drives. In this work, we applied argon gas cluster ion beam (Ar-GCIB) treatments to obtain ultra-smooth sliding pins for pin-on-disk tests of nanometer-thick perfluoropolyether (PFPE) lubricant films coated on magnetic disk surfaces. The GCIB treatments effectively smoothed the pin surfaces, and increases in the Ar dose decreased surface roughness. An ultra-smooth surface with a maximum peak height (Rp) less the monolayer lubricant film thickness was achieved when the Ar dose was increased to 8 × 1016 ions/cm2. We observed that both surface roughness and film thickness affected the friction coefficients of the PFPE films. To quantitatively describe the interplay of surface roughness and film thickness, we introduced two roughness characteristics: the ratio of film thickness to the surface’s root-mean-square roughness (h/σ), and a surface-pattern parameter (γ), defined as the ratio of correlation lengths in two orthogonal directions. We infer that a fixed γ and higher h/σlead to lower friction coefficients, while a fixed h/σand higher γ induce higher friction coefficients.

  7. Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB2 thin films

    Directory of Open Access Journals (Sweden)

    Teng Tan

    2015-04-01

    Full Text Available For potential applications in superconducting RF cavities, we have investigated the properties of polycrystalline MgB2 films, including the thickness dependence of the lower critical field Hc1. MgB2 thin films were fabricated by hybrid physical-chemical vapor deposition on (0001 SiC substrate either directly (for epitaxial films or with a MgO buffer layer (for polycrystalline films. When the film thickness decreased from 300 nm to 100 nm, Hc1 at 5 K increased from around 600 Oe to 1880 Oe in epitaxial films and to 1520 Oe in polycrystalline films. The result is promising for using MgB2/MgO multilayers to enhance the vortex penetration field.

  8. Influence of CuO addition on dielectric properties of (Ba,Sr)TiO{sub 3} thick films

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Seok-Woo; Koh, Jung-Hyuk [Kwangwoon University, Seoul (Korea, Republic of)

    2011-03-15

    The structural and the dielectric properties of CuO doped (Ba,Sr)TiO{sub 3} thick film interdigital capacitors on the alumina substrates have been investigated. Various contents of CuO dopants were added to the (Ba,Sr)TiO{sub 3} thick films to lower the sintering temperature of the (Ba,Sr)TiO{sub 3} thick films on alumina substrates. Thick films were screen printed on the alumina substrates; then, interdigital capacitors with five pairs of fingers with a finger gap of 50 {mu}m, a width of 100 {mu}m, and a length of 200 {mu}m were fabricated with 1-{mu}m-thick silver electrodes through an e-beam evaporation process. For the analysis of the structural and dielectric properties, X-ray diffraction and dielectric spectroscopy were employed, respectively. Scanning electron microscopy was used to determine the morphologies of the thick films. In this experiment, we found that the lattice parameters as well as the dielectric constant were decreased with increasing CuO dopants. The 3-wt% CuO-doped BST thick film have the lowest loss tangent of 0.21% at 1 MHz and the lowest leakage current density of 10 pA at 20 kV/cm.

  9. Large area deposition of YBCO thick films for applications in resistive fault current limiting devices

    International Nuclear Information System (INIS)

    The preparation of the switching element of a resistive superconducting fault current limiter requires the up-scaling of deposition techniques for thin YBa2Cu3O7-x (YBCO) films to large areas and high film thicknesses. For a projected 100 kVA limiter model an area of about 400 cm2 and a film thickness of up to 5 μm will be necessary, depending on the material properties like critical current density jc and normal state resistivity ρn. Within a joint project various deposition methods including pulsed laser deposition (PLD), magnetron sputtering (MS), thermal evaporation (TE) and plasma flash evaporation (PFE) are evaluated as possible candidates for the operation of deposition systems capable of coating 20 x 20 cm2 substrates. Both single crystalline wafers and polycrystalline ceramic plates are considered as substrates. To achieve high jc on polycrystalline substrate materials an additional zirconia buffer layer consisting of biaxially orientated crystallites has to be prepared by ion beam assisted deposition (IBAD). In small samples with IBAD buffer critical currents above 105 A cm-2 with a maximum of 1 x 106 A cm-2 have been achieved. The presently available sample sizes depend on the installed systems for YBCO and buffer deposition, respectively and on the commercial availability of the substrate material. The largest samples which have been prepared and characterised have sizes of 1 x 25 cm2 and 5 x 5 cm2 for PLD, 10 x 10 cm2 for TE and IBAD, 2 in. (1 in.=2.54 cm) diameter for MS, and 3 x 7 cm2 for PFE. The corresponding highest film thicknesses are 4.5 μm for PLD, 1.4 μm for TE, 1.6 μm for IBAD and 0.4 μm for MS. (orig.)

  10. Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films

    International Nuclear Information System (INIS)

    The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films to exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB2 thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature TC, the authors are the first to report on the correlation between stoichiometry and the lower critical field HC1

  11. Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Beebe, Melissa R., E-mail: mrbeebe@email.wm.edu; Beringer, Douglas B.; Burton, Matthew C.; Yang, Kaida; Lukaszew, R. Alejandra [Department of Physics, The College of William & Mary, Small Hall, 300 Ukrop Way, Williamsburg, Virginia 23185 (United States)

    2016-03-15

    The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films to exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB{sub 2} thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature T{sub C}, the authors are the first to report on the correlation between stoichiometry and the lower critical field H{sub C1}.

  12. Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111) Si Substrate: The Effect of Film Thickness

    OpenAIRE

    Cheng-Chang Yu; Wen-How Lan; Kai-Feng Huang

    2014-01-01

    Indium-nitrogen codoped zinc oxide (INZO) thin films were fabricated by spray pyrolysis deposition technique on n-(111) Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The grain size of the films increased when increasing the film thickness. From XRD ...

  13. Effect of bottom electrodes on polarization switching and energy storage properties in Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thin films

    Science.gov (United States)

    Fang, X. G.; Lin, S. X.; Zhang, A. H.; Lu, X. B.; Gao, X. S.; Zeng, M.; Liu, J.-M.

    2015-10-01

    Polarization switching and energy storage properties of a series of Pb0.97La0.02Zr0.95Ti0.05O3 (PLZT) thin films deposited on (100)-textured LaNiO3 (LNO)-buffered Si substrates and (111)-textured Pt/Ti/SiO2/Si substrates were investigated. It was revealed that the PLZT films deposited on the (100)-textured LNO-buffered Si substrates prefer the (100) textured structure, while the orientation of the films deposited on the (111)-textured Pt-coated Si substrates is random. With respect to the films on the Pt-coated Si substrates, the (100) textured PLZT films have bigger compressive residual stress, larger electrical polarization, better dielectric properties, and better energy storage performances. For the (100)-orientated PLZT films, the energy density (Ws) and efficiency (η) measured at room temperature are about 15.3 J/cm3 and 56% respectively. Moreover, the better frequency stability in the range from 20 Hz to 10 kHz, and temperature stability in the range from 25 to 270 °C are demonstrated in the (100)-orientated PLZT films. These results indicate that the PLZT films with LNO bottom electrode could be potential candidate for applications in high energy storage density capacitors.

  14. Coherent piezoelectric strain transfer to thick epitaxial ferromagnetic films with large lattice mismatch.

    Science.gov (United States)

    Kim, Jang-Yong; Yao, Lide; van Dijken, Sebastiaan

    2013-02-27

    Strain control of epitaxial films using piezoelectric substrates has recently attracted significant scientific interest. Despite its potential as a powerful test bed for strain-related physical phenomena and strain-driven electronic, magnetic, and optical technologies, detailed studies on the efficiency and uniformity of piezoelectric strain transfer are scarce. Here, we demonstrate that full and uniform piezoelectric strain transfer to epitaxial films is not limited to systems with small lattice mismatch or limited film thickness. Detailed transmission electron microscopy (TEM) and x-ray diffraction (XRD) measurements of 100 nm thick CoFe(2)O(4) and La(2/3)Sr(1/3)MnO(3) epitaxial films on piezoelectric 0.72Pb(Mg(1/3)Nb(2/3))O(3)-0.28PbTiO(3) substrates (+4.3% and -3.8% lattice mismatch) indicate that misfit dislocations near the interface do not hamper the transfer of piezoelectric strain. Instead, the epitaxial magnetic oxide films and PMN-PT substrates are strained coherently and their lattice parameters change linearly as a function of applied electric field when their remnant growth-induced strain state is negligible. As a result, ferromagnetic properties such as the coercive field, saturation magnetization, and Curie temperature can be reversibly tuned by electrical means. The observation of efficient piezoelectric strain transfer in large-mismatch heteroepitaxial structures opens up new possibilities for the engineering of strain-controlled physical properties in a broad class of hybrid material systems. PMID:23370268

  15. The effect of the film thickness and doping content of SnO2:F thin films prepared by the ultrasonic spray method

    International Nuclear Information System (INIS)

    This paper reports on the effects of film thickness and doping content on the optical and electrical properties of fluorine-doped tin oxide. Tin (II) chloride dehydrate, ammonium fluoride dehydrate, ethanol and HCl were used as the starting materials, dopant source, solvent and stabilizer, respectively. The doped films were deposited on a glass substrate at different concentrations varying between 0 and 5 wt% using an ultrasonic spray technique. The SnO2:F thin films were deposited at a 350 °C pending time (5, 15, 60 and 90 s). The average transmission was about 80%, and the films were thus transparent in the visible region. The optical energy gap of the doped films with 2.5 wt% F was found to increase from 3.47 to 3.89 eV with increasing film thickness, and increased after doping at 5 wt%. The decrease in the Urbach energy of the SnO2:F thin films indicated a decrease in the defects. The increase in the electrical conductivity of the films reached maximum values of 278.9 and 281.9 (Ω·cm)−1 for 2.5 and 5 wt% F, respectively, indicating that the films exhibited an n-type semiconducting nature. A systematic study on the influence of film thickness and doping content on the properties of SnO2:F thin films deposited by ultrasonic spray was reported. (semiconductor materials)

  16. Dependence of Photovoltaic Property of ZnO/Si Heterojunction Solar Cell on Thickness of ZnO Films

    Institute of Scientific and Technical Information of China (English)

    ZHANG Wei-Ying; ZHONG Sheng; SUN Li-Jie; FU Zhu-Xi

    2008-01-01

    N-ZnO/p-Si heterojunctions are prepared by sputtering deposition of intrinsic ZnO films on p-Si substrates.Thicknesses of ZnO films are altered by varying the deposition time from I h to 3 h.The electrical properties of these structures are analysed from capacitance-voltage ( C- V) and current-voltage (I- V) characteristics performed in a dark room.The results demonstrated that all the samples show strong rectifying behaviour.Photovoltalc property for the samples with different thicknesses of ZnO films are investigated by measuring open circuit voltage and short circuit current.It is found that photovoltages are kept to be almost constant of 32OmV along with the thickness while photocurrents changing a lot.The variation mechanism of the photovoltalc effect as a function of thickness of ZnO films is investigated.

  17. Nanostructured Fe2O3/TiO2 thick films prepared by screen printing

    Directory of Open Access Journals (Sweden)

    Obrad S. Aleksic

    2013-09-01

    Full Text Available Nanostructured single layered (pure TiO2, pure α-Fe2O3 and mixed Fe2O3/TiO2 with two different oxide ratios, 2 : 3 and 3 : 2 and double layered (TiO2 layer over a Fe2O3 layer thick films have been fabricated by screen printing technology on a glass substrate. The pastes used for film preparation were obtained by adding an organic vehicle to the oxide powders together with a small percentage of binding glass frit. Samples were dried up to 100 °C and sintered at 650 °C/60 minutes. Structural, morphological and optical studies have been carried out using XRD, SEM analyses and UV/Vis spectroscopy. The prepared pure and mixed Fe2O3/TiO2 thick films had a homogenous nanostructure without secondary phases. Indirect band gaps were determined from the measured transmission spectra and the obtained values are in the range of literature data.

  18. Facile production of thermoelectric bismuth telluride thick films in the presence of polyvinyl alcohol.

    Science.gov (United States)

    Lei, C; Burton, M R; Nandhakumar, I S

    2016-06-01

    Bismuth telluride is currently the best performing thermoelectric material for room temperature operations in commercial thermoelectric devices. We report the reproducible and facile production of 600 micron thick bismuth telluride (Bi2Te3) layers by low cost and room temperature pulsed and potentiostatic electrodeposition from a solution containing bismuth and tellurium dioxide in 2 M nitric acid onto nickel in the presence of polyvinyl alcohol (PVA). This was added to the electrolyte to promote thick layer formation and its effect on the structure, morphology and composition of the electrodeposits was investigated by SEM and EDX. Well adherent, uniform, compact and stoichiometric n-type Bi2Te3 films with a high Seebeck coefficient of up to -200 μV K(-1) and a high electrical conductivity of up to 400 S cm(-1) resulting in a power factor of 1.6 × 10(-3) W m(-1) K(-2) at film growth rates of 100 μm h(-1) for potentiostatic electrodeposition were obtained. The films also exhibited a well defined hexagonal structure as determined by XRD.

  19. Enhanced heat transfer is dependent on thickness of graphene films: the heat dissipation during boiling

    Science.gov (United States)

    Ahn, Ho Seon; Kim, Jin Man; Kim, Taejoo; Park, Su Cheong; Kim, Ji Min; Park, Youngjae; Yu, Dong In; Hwang, Kyoung Won; Jo, Hangjin; Park, Hyun Sun; Kim, Hyungdae; Kim, Moo Hwan

    2014-09-01

    Boiling heat transfer (BHT) is a particularly efficient heat transport method because of the latent heat associated with the process. However, the efficiency of BHT decreases significantly with increasing wall temperature when the critical heat flux (CHF) is reached. Graphene has received much recent research attention for applications in thermal engineering due to its large thermal conductivity. In this study, graphene films of various thicknesses were deposited on a heated surface, and enhancements of BHT and CHF were investigated via pool-boiling experiments. In contrast to the well-known surface effects, including improved wettability and liquid spreading due to micron- and nanometer-scale structures, nanometer-scale folded edges of graphene films provided a clue of BHT improvement and only the thermal conductivity of the graphene layer could explain the dependence of the CHF on the thickness. The large thermal conductivity of the graphene films inhibited the formation of hot spots, thereby increasing the CHF. Finally, the provided empirical model could be suitable for prediction of CHF.

  20. Crystallization of silicon films of submicron thickness by blue-multi-laser-diode annealing

    International Nuclear Information System (INIS)

    Blue-Multi-Laser-Diode Annealing (BLDA) was performed in the continuous wave (CW) mode on Si films as thick as 0.5 μm and 1 μm deposited by rf sputtering. As a result of controlling the laser power from 4.0 to 4.8 W, a whole Si layer of 0.5 μm in thickness was completely crystallized and consisted of a columnar structure of fine grains beneath a partially melted Si surface owing to the high temperature gradient along the depth in the Si layer. After additional hydrogenation in a furnace ambient, the ratio of the photo/dark current under AM 1.5 illumination distinctly improved to 6 times higher than that of as-deposited condition. The BLDA is expected to be applied to thin-film solar cells and/or to thin film transistor (TFT) photo-sensor systems on panels as a new low-temperature poly-silicon (LTPS) fabrication technique.

  1. Crystallization of silicon films of submicron thickness by blue-multi-laser-diode annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mugiraneza, Jean de Dieu; Shirai, Katsuya; Suzuki, Toshiharu; Okada, Tatsuya; Noguchi, Takashi [University of the Ryukyus, Okinawa (Japan); Matsushima, Hideki; Hashimoto, Takao; Ogino, Yoshiaki; Sahota, Eiji [Hitachi Computer Peripherals Co. Ltd, Kanagawa (Japan)

    2012-01-15

    Blue-Multi-Laser-Diode Annealing (BLDA) was performed in the continuous wave (CW) mode on Si films as thick as 0.5 {mu}m and 1 {mu}m deposited by rf sputtering. As a result of controlling the laser power from 4.0 to 4.8 W, a whole Si layer of 0.5 {mu}m in thickness was completely crystallized and consisted of a columnar structure of fine grains beneath a partially melted Si surface owing to the high temperature gradient along the depth in the Si layer. After additional hydrogenation in a furnace ambient, the ratio of the photo/dark current under AM 1.5 illumination distinctly improved to 6 times higher than that of as-deposited condition. The BLDA is expected to be applied to thin-film solar cells and/or to thin film transistor (TFT) photo-sensor systems on panels as a new low-temperature poly-silicon (LTPS) fabrication technique.

  2. Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

    Energy Technology Data Exchange (ETDEWEB)

    Chang, R.C., E-mail: rcc@mail.sju.edu.tw [Department of Mechanical and Computer-Aided Engineering, St. John' s University, Tamsui, Taipei 25135, Taiwan (China); Li, T.C.; Lin, C.W. [Department of Mechanical and Computer-Aided Engineering, St. John' s University, Tamsui, Taipei 25135, Taiwan (China)

    2012-02-01

    Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.

  3. Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

    Science.gov (United States)

    Chang, R. C.; Li, T. C.; Lin, C. W.

    2012-02-01

    Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.

  4. Preparation and photoelectric properties of Fe-doped mesoporous TiO2 thick films used in DSSC

    Science.gov (United States)

    Xie, Yian; Shen, Yue; Gu, Feng; Lu, Huina; Wu, Mingming; Wang, Linjun

    2009-08-01

    Fe-doped mesoporous TiO2 (M-TiO2-Fe) thick films were prepared by sol-gel and screen printing process. Raman characteristics results show that the M-TiO2-Fe thick film possesses a certain degree of the anatase phase, which may have advantages on photocatalysis and photovoltaic ability. Derived from small angel X-Ray diffraction (SAXRD), the films exhibit mesoporous structure with pore size around 7-8 nm. Eg of the films was obviously narrowed from 3.4 eV to 3.0 eV, which allows the thick films using more light to initiate photovoltaic process. Dye-sensitized solar cell (DSSC) based on M-TiO2-Fe was structured and chlorophyl was used as sensitizers. The solar cells have an open circuit voltage above 260mV.

  5. Growth of thick MgB{sub 2} films by impinging-jet hybrid physical-chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lamborn, D.R. [Department of Chemical Engineering, The Pennsylvania State University, University Park, PA 16802 (United States); Wilke, R.H.T.; Li, Q. [Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Xi, X. [Department of Physics, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, PA 16801 (United States); Snyder, D.W. [Applied Research Laboratory, The Pennsylvania State University, University Park, PA 16802 (United States); Redwing, J.M. [Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, PA 16801 (United States)

    2008-01-18

    Thick MgB{sub 2} films are grown using a novel impinging-jet hybrid physical-chemical vapor deposition process. An increased amount of the boron source gas generates high growth rates. Superconducting properties of the thick films are comparable to previous results from other processes, which indicate that this is a promising new process for MgB{sub 2} deposition for coated conductor applications, such as wires and tapes for MRI magnets. (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  6. In situ measurement of humidity induced changes in the refractive index and thickness of polyethylene glycol thin films

    OpenAIRE

    Bilen, Bükem; Skarlatos, Yani; Gülen, Aktaş; İnci, Mehmet Naci; Dışpınar, Tuğba; Köse, Meliha Merve; Sanyal, Amital

    2008-01-01

    Humidity induced changes in the refractive index and thickness of polyethylene glycol (PEG) thin films are in situ determined by optical waveguide spectroscopy. PEG brushes are covalently attached to the surface of a thin gold film on a borosilicate crown glass (BK7) using a grafting-from chemical synthesis technique. The measurements are carried out in an attenuated total internal reflection setup. At low humidity levels, both the refractive index and the thickness change gradually due to sw...

  7. Non-Planar Pad-Printed Thick-Film Focused High-Frequency Ultrasonic Transducers for Imaging and Therapeutic Applications

    OpenAIRE

    Lethiecq, Marc; Lou-Moeller, Rasmus; Ketterling, Jeffrey A.; Levassort, Franck; Tran-Huu-Hue, Louis Pascal; Filoux, Erwan; Silverman, Ronald H.; Wolny, Wanda W.

    2012-01-01

    Pad-printed thick-film transducers have been shown to be an interesting alternative to lapped bulk piezoceramics, because the film is deposited with the required thickness, size, and geometry, thus avoiding any subsequent machining to achieve geometrical focusing. Their electromechanical properties are close to those of bulk ceramics with similar composition despite having a higher porosity. In this paper, pad-printed high-frequency transducers based on a low-loss piezoceramic composition are...

  8. Influence of La-Mn-Al Co-Doping on Dielectric Properties and Structure of BST Thick Film

    Institute of Scientific and Technical Information of China (English)

    Mao-Yan Fan; Sheng-Lin Jiang

    2009-01-01

    A new sol-gel process is applied to fabricate the BST (BaxSr1(xTiO3) sol and nano-powder of La-Mn-Al co-doping with Ba/Sr ratio 65/35, and the BST thick film is prepared in the Pt/Ti/SiO2/Si substrate. The powder and thick film are characterized by X-ray diffraction and transmission electron microscope. The influence of La-Mn-Al co-doping on the dielectric properties and micro-structure of BST thick film is analyzed. The results show that the La, Mn, and Al ions can take an obvious restraint on the growth of BaSrTiO3 grains. The polycrystalline particles come into being during the crystallization of thick film, which may improve the uniformity and compactness of thick film. The influence of unequal-valence and doping amount on the leakage current, dielectric loss, and dielectric property are mainly discussed. The dielectric constant and dielectric loss of thick film are 1200 and 0.03, respectively, in the case of 1mol% La doping, 2mol% Mn doping, and 1mol% Al doping.

  9. Development of Three-Ring Conductance Meter on Flexible Printed Circuit Board for Liquid Film Thickness Measurement

    International Nuclear Information System (INIS)

    Electrical methods which based on conductance of fluid film have been widely applied for many years. Recently, Damsohn developed a high speed liquid film sensor that has great time and spatial resolution by applying printed circuit board (PCB) and wire-mesh signal processing unit. However, the conductivity of the fluid can be affected by its temperature change and previous electrical methods have limitations of its applicability where a heat transfer is involved. In order to overcome this limitation, Kim proposed three-ring conductance method which can measure the liquid film thickness independent of the liquid temperature variation. In the present work, the three-ring conductance meter is improved by fabricating it on flexible printed circuit board (FPCB). Since the FPCB can be attached on a curved surface and can tolerate temperature up to 180 .deg. C, it is expected to be applied to more diverse experimental conditions of nuclear thermal-hydraulics. This paper introduces the three ring conductance meter on FPCB and a preliminary experimental result in order to show its feasibility for measuring liquid film thickness under temperature varying conditions. From this experimental research, the availability of three-ring conductance meter fabricated on FPCB for measuring film-thickness by using current output signal was proved. Besides, the necessity of customized electrode design depending on film-thickness was found. Also, it was confirmed that the manufactured three-ring conductance meter can measure the film-thickness regardless of temperature change

  10. Highly Strained Si Films with Ultra-low Dislocation Density Grown on Virtual Substrates of Thin Thickness

    Institute of Scientific and Technical Information of China (English)

    YANG Hong-Bin; ZHANG Xiang-Jiu

    2009-01-01

    @@ By using compositionally graded SiGe films as virtual substrates, tensile strained Si films with the strain of 1.5% and the threading dislocation density less than 1.0×105cm-2 are successfully grown in micron size windows by molecular beam epitaxy (MBE). The thickness of the virtual substrates was only 330nm. On the surface of the s-Si films no cross-hatched lines resulting from misfit dislocations could be observed. We attribute these results to the edge-induced strain relaxation of the epitaxial films in windows, and the patterned virtual substrates with compositionally graded SiGe films.

  11. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity.

    Science.gov (United States)

    Kang, Kibum; Xie, Saien; Huang, Lujie; Han, Yimo; Huang, Pinshane Y; Mak, Kin Fai; Kim, Cheol-Joo; Muller, David; Park, Jiwoong

    2015-04-30

    The large-scale growth of semiconducting thin films forms the basis of modern electronics and optoelectronics. A decrease in film thickness to the ultimate limit of the atomic, sub-nanometre length scale, a difficult limit for traditional semiconductors (such as Si and GaAs), would bring wide benefits for applications in ultrathin and flexible electronics, photovoltaics and display technology. For this, transition-metal dichalcogenides (TMDs), which can form stable three-atom-thick monolayers, provide ideal semiconducting materials with high electrical carrier mobility, and their large-scale growth on insulating substrates would enable the batch fabrication of atomically thin high-performance transistors and photodetectors on a technologically relevant scale without film transfer. In addition, their unique electronic band structures provide novel ways of enhancing the functionalities of such devices, including the large excitonic effect, bandgap modulation, indirect-to-direct bandgap transition, piezoelectricity and valleytronics. However, the large-scale growth of monolayer TMD films with spatial homogeneity and high electrical performance remains an unsolved challenge. Here we report the preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide (MoS2) and tungsten disulphide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films. They are grown with a newly developed, metal-organic chemical vapour deposition technique, and show high electrical performance, including an electron mobility of 30 cm(2) V(-1) s(-1) at room temperature and 114 cm(2) V(-1) s(-1) at 90 K for MoS2, with little dependence on position or channel length. With the use of these films we successfully demonstrate the wafer-scale batch fabrication of high-performance monolayer MoS2 field-effect transistors with a 99% device yield and the multi-level fabrication of vertically stacked transistor devices for three

  12. Impedance of nanometer thickness ferromagnetic Co40Fe40B20 films

    Directory of Open Access Journals (Sweden)

    Lo Chi

    2011-01-01

    Full Text Available Abstract Nanocrystalline Co40Fe40B20 films, with film thickness t f = 100 nm, were deposited on glass substrates by the magnetron sputtering method at room temperature. During the film deposition period, a dc magnetic field, h = 40 Oe, was applied to introduce an easy axis for each film sample: one with h||L and the other with h||w, where L and w are the length and width of the film. Ferromagnetic resonance (FMR, ultrahigh frequency impedance (IM, dc electrical resistivity (ρ, and magnetic hysteresis loops (MHL of these films were studied. From the MHL and r measurements, we obtain saturation magnetization 4πMs = 15.5 kG, anisotropy field H k = 0.031 kG, and r = 168 mW.cm. From FMR, we can determine the Kittel mode ferromagnetic resonance (FMR-K frequency f FMRK = 1,963 MHz. In the h||L case, IM spectra show the quasi-Kittel-mode ferromagnetic resonance (QFMR-K at f 0 and the Walker-mode ferromagnetic resonance (FMR-W at fn , where n = 1, 2, 3, and 4. In the h||w case, IM spectra show QFMR-K at F 0 and FMR-W at Fn . We find that f 0 and F 0 are shifted from f FMRK, respectively, and fn = Fn . The in-plane spin-wave resonances are responsible for those relative shifts. PACS No. 76.50.+q; 84.37.+q; 75.70.-i

  13. Quasiparticle Transport in Thick Aluminum Films Coupled to Tungsten Transition Edge Sensors

    Science.gov (United States)

    Yen, J. J.; Kreikebaum, J. M.; Young, B. A.; Cabrera, B.; Moffatt, R.; Redl, P.; Shank, B.; Brink, P. L.; Cherry, M.; Tomada, A.

    2016-07-01

    We have fabricated and characterized test devices of a new geometry for cryogenic dark matter search superconducting sensors. The modified design uses the same photolithography masks used to fabricate earlier-generation devices, but with the Al and W films deposited in reverse order. This inverted film geometry (Al over W instead of our conventional W over Al) offers a simplified and robust way to dramatically increase the thickness of Al energy-collecting fins coupled to thin W-TESs—tungsten-transition edge sensors. Data are presented from experiments with inverted geometry test devices exposed to X-rays from a NaCl fluorescence source. The results are compared to data obtained with similar devices fabricated in the standard, non-inverted geometry.

  14. Thermal Marangoni instability of a thin film flowing down a thick wall deformed in the backside

    Science.gov (United States)

    Dávalos-Orozco, L. A.

    2016-05-01

    The nonlinear instability of a thin liquid film flowing down a heated thick wall with deformations in the backside is investigated. Here it is assumed that the wall deformations are sinusoidal in space. Time dependent perturbations are imposed at the origin of the free surface of the film. It is found that the wall deformations have an important influence on the flow instability. Moreover, it is shown that the free surface has a large amplitude spatial response to the backside deformations of the wall. This response increases its amplitude considerably when decreasing the wall spatial wavelength down to the wavelength of the time dependent perturbations. At that point, numerical analysis reveals that the time dependent perturbations in some cases are almost impossible to observe on the free surface response. However, in other cases, their interaction produces large amplitude nonlinear wave modulations.

  15. Coupling effects in bilayer thick metal films perforated with rectangular nanohole arrays

    Directory of Open Access Journals (Sweden)

    Li Yuan

    2013-09-01

    Full Text Available The coupling effects in bilayer thick metal (silver films perforated with rectangular nanohole arrays are investigated using the finite-difference time-domain technique. Many interesting light phenomena are observed as the distance between the metal rectangular nanohole arrays varies. Coupling effects are found to play very important roles on the optical and electronic properties of bilayer metal rectangular nanohole arrays: antisymmetric coupling between surface plasmon polaritons near the top and bottom film plane, and antisymmetric coupling between localized surface plasmon resonances near the two long sides of the rectangular hole, are probably excited in each layer of bilayer metal rectangular nanohole arrays; antisymmetric and symmetric magnetic coupling probably occur between the metal rectangular nanohole arrays.

  16. Microstructure and thermoelectric properties of screen-printed thick-films of misfit-layered cobalt oxides with Ag addition

    DEFF Research Database (Denmark)

    Van Nong, Ngo; Samson, Alfred Junio; Pryds, Nini;

    2012-01-01

    Thermoelectric properties of thick (~60 μm) films prepared by a screen-printing technique using p-type misfit-layered cobalt oxide Ca3Co4O9+δ with Ag addition have been studied. The screen-printed films were sintered in air at various temperatures ranging from 973 K to 1223 K. After each sintering...

  17. Effect of Ti layer thickness on microstructure and magnetic properties of Ti/Co/Ti films

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yujie; ZHANG Hanwei; FENG Shunzhen; SUN Huiyuan; HU Yanying; PENG Yan

    2006-01-01

    TiCoTi granular films were prepared by DC facing-target magnetron sputtering system onto glass substrates and subsequently in situ annealing in vacuum. Structural of Ti ( t nm)/Co (40 nm)/Ti ( t nm) films were investigated in detail, which shows that the majority Co nanograins are formed as the hexagonal-close-packed (HCP) structure. Vibrating sample magnetometer (VSM) and scanning probe microscope (SPM) were applied to study the magnetic properties, morphologies and domain structures of these samples. It has been found that the structure and magnetic properties of the Ti/Co/Ti films depend strongly on the Ti layer thickness. The out-of-plane coercivities ( Hc) of the film is maximum about 78.8 kA·m-1 when t =5 nm with annealing at 300 ℃; the distributing of grains of the sample is uniformity; and the average size of particles is about 13 nm. The obtained results suggest that this system is perpendicular anisotropy and might be applicable to perpendicular magnetic recording media.

  18. High critical current YBCO thick films by TFA-MOD process

    International Nuclear Information System (INIS)

    As a method of the fabrication processes of YBa2Cu3O7-x (YBCO), the metalorganic deposition (MOD) process using metal trifluoroacetete (TFA) is considered to be a strong candidate due to its low cost fabrication process for coated conductors with high Jc. In our previous work, a triple coated film with 1 μm in thickness was fabricated on a CeO2/IBAD-YSZ layer buffered Hastelloy substrate by optimizing the condition of heat treatments such as PH2O in the multi-coating method [Physica C 378-381 (2002) 1013]. The Jc value of 1.6 MA/cm2 (77 K in self-field) in this film patterned 100 μm width and the Ic* value of 153 A/cm-width at 77 K in self-field were achieved. In order to obtain a thicker film with high overall Ic* for 1 cm width, the influence of the heat treatment conditions of PH2O, PO2, and the temperature in the MOD process was investigated. Subsequently, a 5 times coated film was obtained on a CeO2/IBAD-Zr2Gd2O7 layer buffered Hastelloy substrate by optimizing the conditions of heating and dip coating. As a result, the overall transport Ic value was improved to 210 A and Jc value of 1.53 MA/cm2 was obtained (77 K in self-field)

  19. Use of polymeric compounds to produce thick YBCO films by TFA-MOD process

    International Nuclear Information System (INIS)

    One route to achieve thick YBCO layers by a single deposition on single crystal substrates (LAO) has been to modify the viscosity of the solution by using different polymeric agents in precursor solutions. A screening investigation of several polymers with different molecular weights has been performed to choose the best additive based on the following criteria : to increase viscosity, to avoid any chemical reaction with the precursors and to keep the same decomposition temperature as compared to the pyrolysis of the TFA precursors. Solution viscosity, thermal and thermo-gravimetric analysis measurements have been used to characterize the TFA solutions with the additives. An increase of the YBCO films thickness of 100% (≥600nm) has been demonstrated keeping a high Jc ≥ 1.1 MA/cm2 (77K)

  20. Integrated thick-film p-i-p+ structures based on spinel ceramics

    OpenAIRE

    Klym, H.; Hadzaman, I.; Shpotyuk, O.; Q. Fu; Luo, W.; J. Deng

    2012-01-01

    Multilayered temperature/humidity sensitive thick-film p-i-p+ structures based on spinel-type semiconducting ceramics of different chemical composition Cu0.1Ni0.1Co1.6Mn1.2O4 (with p+-type of electrical conductivity), Cu0.1Ni0.8Co0.2Mn1.9O4 (with p-type of electrical conductivity) and magnesium aluminate i-type MgAl2O4 ceramics were fabricated and investigated. These structures are shown to be successfully applied for integrated environmental sensors.

  1. Formation and physical properties of YBCO thick films grown by using the electrophoretic deposition method

    International Nuclear Information System (INIS)

    Thick films of the YBa2Cu3Oγ-δ (YBCO) superconductor were prepared by using the electrophoretic deposition technique and a flexible wire as the substrate. The transition temperature of the wires was 91 K, the intragranular magnetic critical current density Jcgmag was about 105 A/cm2 at 77 K in a weak field, and the transport Jctrans was about 365 A/cm2 at 77 K. We calculated the intergranular magnetic critical current JcJmag and the activation energy from the AC-susceptibility measurements, and their values were about 444 A/cm2 at 77 K and 2.02 eV, respectively

  2. Deep Impact Delta II Launch Vehicle Cracked Thick Film Coating on Electronic Packages Technical Consultation Report

    Science.gov (United States)

    Cameron, Kenneth D.; Kichak, Robert A.; Piascik, Robert S.; Leidecker, Henning W.; Wilson, Timmy R.

    2009-01-01

    The Deep Impact spacecraft was launched on a Boeing Delta II rocket from Cape Canaveral Air Force Station (CCAFS) on January 12, 2005. Prior to the launch, the Director of the Office of Safety and Mission Assurance (OS&MA) requested the NASA Engineering and Safety Center (NESC) lead a team to render an independent opinion on the rationale for flight and the risk code assignments for the hazard of cracked Thick Film Assemblies (TFAs) in the E-packages of the Delta II launch vehicle for the Deep Impact Mission. The results of the evaluation are contained in this report.

  3. Model of Thick Film Screen Printing%厚膜印刷模型

    Institute of Scientific and Technical Information of China (English)

    刘忠安

    2000-01-01

    提出了厚膜印刷的物理模型,并用静态模型建立了丝网印刷参数和图形的压印形变量之间的关系,以解决实际印刷工艺中的图形匹配和精确套印问题。%The physical model of thick film screen printing is put forward in this paper. The relation between the printing parameters and the screen deformation is established by approximate method of static model. The overprint and match of different screen printing graph can be realised.

  4. Screen printed PZT/PZT thick film bimorph MEMS cantilever device for vibration energy harvesting

    DEFF Research Database (Denmark)

    Xu, R.; Lei, A.; Christiansen, T. L.;

    2011-01-01

    We present a MEMS-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. The most common piezoelectric energy harvesting devices utilize a cantilever beam of a non piezoelectric material as support beneath or in-between the piezoelectric material....... It provides mechanical support but it also reduces the power output. Our device replaces the support with another layer of the piezoelectric material, and with the absence of an inactive mechanical support all of the stresses induced by the vibrations will be harvested by the active piezoelectric elements....

  5. Measurement of oil film thickness and friction force on a guide shoe bearing

    DEFF Research Database (Denmark)

    Vølund, Anders

    2002-01-01

    An experimental program was carried out in order to reveal oil film thickness, and friction force of the guide shoe bearing of a large two stroke marine diesel engine. The experiment was conducted on a full size engine located at the research facility at MAN B&W Diesel A/S. The experiment...... was conducted such that the influence from the experiment on the characteristics were as small as possible. The objective of the experiment was to determine the frictional loss of this bearing and to check whether a suggested numerical model was applicable or not. Some future aspects for this bearing...

  6. A low-cost photovoltaic cell process based on thick film techniques

    Science.gov (United States)

    Mardesich, N.; Pepe, A.; Bunyan, S.; Edwards, B.; Olson, C.

    1980-01-01

    The low-cost, easily automated processing for solar cell fabrication being developed at Spectrolab for the DOE LSA program is described. These processes include plasma-etching, spray-on diffusion sources and antireflective coating, thick film metallization, aluminum back contacts, laser scribing and ultrasonic soldering. The process sequence has been shown to produce solar cells having 15% conversion efficiency at AM1 which meet the cell fabrication budget required for the DOE 1986 cost goal of $0.70 per peak watt in 1980.

  7. Thin-thick coexistence behavior of 8CB liquid crystalline films on silicon

    OpenAIRE

    R. Garcia; Subashi, E.; Fukuto, M.

    2007-01-01

    The wetting behavior of thin films of 4'-n-octyl-4-cyanobiphenyl (8CB) on Si is investigated via optical and x-ray reflectivity measurement. An experimental phase diagram is obtained showing a broad thick-thin coexistence region spanning the bulk isotropic-to-nematic ($T_{IN}$) and the nematic-to-smectic-A ($T_{NA}$) temperatures. For Si surfaces with coverages between 47 and $72\\pm3$ nm, reentrant wetting behavior is observed twice as we increase the temperature, with separate coexistence be...

  8. Tritium method oil consumption and its relation to oil film thicknesses in a production diesel engine

    OpenAIRE

    Hartman, Richard M.

    1990-01-01

    CIVINS Approved for public release ; distribution is unlimited Oil consumption was measured in a modern production diesel engine using tritium as a radiotracer. The measurements were made primarily at two speeds and one load using first a single-grade lubricant and then a multi-grade lubricant. These values were then compared to oil flow rates up/down the liner which were based on film thickness traces of a sister engine under the same loads and speeds. The traces were obtained using th...

  9. ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

    Directory of Open Access Journals (Sweden)

    Javed Iqbal

    2016-10-01

    Full Text Available Nanostructured ZnO thin films with high transparency have been grown on glass substrate by atomic layer deposition at various temperatures ranging from 100 °C to 300 °C. Efforts have been made to observe the effect of substrate temperature on the thickness of the deposited thin films and its consequences on the energy band gap. A remarkably high growth rate of 0.56 nm per cycle at a substrate temperature of 200 °C for ZnO thin films have been achieved. This is the maximum growth rate for ALD deposited ZnO thin films ever reported so far to the best of our knowledge. The studies of field emission scanning electron microscopy and X-ray diffractometry patterns confirm the deposition of uniform and high quality nanosturtured ZnO thin films which have a polycrystalline nature with preferential orientation along (100 plane. The thickness of the films deposited at different substrate temperatures was measured by ellipsometry and surface profiling system while the UV–visible and photoluminescence spectroscopy studies have been used to evaluate the optical properties of the respective thin films. It has been observed that the thickness of the thin film depends on the substrate temperatures which ultimately affect the optical and structural parameters of the thin films.

  10. Thermal Conductivity Measurement of Submicron-Thick Aluminium Oxide Thin Films by a Transient Thermo-Reflectance Technique

    Institute of Scientific and Technical Information of China (English)

    BAI Su-Yuan; TANG Zhen-An; HUANG Zheng-Xing; YU Jun; WANG Jia-Qi

    2008-01-01

    Thermal conductivity of submicron-thick aluminium oxide thin films prepared by middle frequency magnetron sputtering is measured using a transient thermo-reflectance technique.A three-layer model based on transmission line theory and the gentic algorithm optimization method are employed to obtain the thermal conductivity of thin films and the interfacial thermal resistance.The results show that the average thermal conductivity of 3301000nm aluminium oxide thin films is 3.3Wm-1 K-1 at room temperature.No significant thickness dependence is found.The uncertainty of the measurement is less than 10%.

  11. The best etching condition of 12-μm thick polyester film as a solid track detector

    International Nuclear Information System (INIS)

    Solid track spark counting is a convenient way to investigate the best etching condition of polyester-films. In this work, polyester films in thickness of 12 were etched in KOH solution in three groups of etching conditions, in term of the temperature, KOH concentration and etching hours. By comparing the spark counting curves, it was decided that the 12-μm thick polyester films could be etched best in a 6 mol/L KOH solution at 60 degree C for 3 h. (authors)

  12. Homogeneity analysis of high yield manufacturing process of mems-based pzt thick film vibrational energy harvesters

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Pedersen, C.M.;

    2011-01-01

    This work presents a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibrational energy harvesters aimed towards vibration sources with peak frequencies in the range of a few hundred Hz. By combining KOH etching with mechanical front side protection, SOI wafer...... to accurately define the thickness of the silicon part of the harvester and a silicon compatible PZT thick film screen-printing technique, we are able to fabricate energy harvesters on wafer scale with a yield higher than 90%. The characterization of the fabricated harvesters is focused towards the full wafer...

  13. Dependence of the optimum parameters of femtosecond laser annealing of lead zirconate titanate films on their thickness

    Science.gov (United States)

    Elshin, A. S.; Abdullaev, D. A.; Mishina, E. D.

    2016-06-01

    The optimum parameters of laser annealing (crystallization) induced by repetitive pulses with a pulse duration of 100 fs and a wavelength of 800 nm, which falls in the transparency region of the film and, simultaneously, in the absorption region of the substrate, have been investigated experimentally as a function of the thickness of the ferroelectric film. It has been shown that, with an increase in the thickness of the ferroelectric film by 100 nm (in the range from 300 to 600 nm), the required power density of the laser beam increases, on the average, by 0.1 MW/cm2. The optimum exposure time of the laser beam with the desired power increases nonlinearly with an increase in the thickness of the film.

  14. Improvement of Flame-made ZnO Nanoparticulate Thick Film Morphology for Ethanol Sensing

    Directory of Open Access Journals (Sweden)

    Sukon Phanichphant

    2007-05-01

    Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis using zinc naphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particles properties were analyzed by XRD, BET. The ZnO particle size and morphology was observed by SEM and HR-TEM revealing spheroidal, hexagonal, and rod-like morphologies. The crystallite sizes of ZnO spheroidal and hexagonal particles ranged from 10-20 nm. ZnO nanorods were ranged from 10-20 nm in width and 20-50 nm in length. Sensing films were produced by mixing the nanoparticles into an organic paste composed of terpineol and ethyl cellulose as a vehicle binder. The paste was doctor-bladed onto Al2O3 substrates interdigitated with Au electrodes. The morphology of the sensing films was analyzed by optical microscopy and SEM analysis. Cracking of the sensing films during annealing process was improved by varying the heating conditions. The gas sensing of ethanol (25-250 ppm was studied at 400 °C in dry air containing SiC as the fluidized particles. The oxidation of ethanol on the surface of the semiconductor was confirmed by mass spectroscopy (MS. The effect of micro-cracks was quantitatively accounted for as a provider of extra exposed edges. The sensitivity decreased notably with increasing crack of sensing films. It can be observed that crack widths were reduced with decreasing heating rates. Crack-free of thick (5 μm ZnO films evidently showed higher sensor signal and faster response times (within seconds than cracked sensor. The sensor signal increased and the response time decreased with increasing ethanol concentration.

  15. A 240-channel thick film multi-chip module for readout of silicon drift detectors

    Science.gov (United States)

    Lynn, D.; Bellwied, R.; Beuttenmueller, R.; Caines, H.; Chen, W.; DiMassimo, D.; Dyke, H.; Elliott, D.; Grau, M.; Hoffmann, G. W.; Humanic, T.; Jensen, P.; Kleinfelder, S. A.; Kotov, I.; Kraner, H. W.; Kuczewski, P.; Leonhardt, B.; Li, Z.; Liaw, C. J.; LoCurto, G.; Middelkamp, P.; Minor, R.; Mazeh, N.; Nehmeh, S.; O'Conner, P.; Ott, G.; Pandey, S. U.; Pruneau, C.; Pinelli, D.; Radeka, V.; Rescia, S.; Rykov, V.; Schambach, J.; Sedlmeir, J.; Sheen, J.; Soja, B.; Stephani, D.; Sugarbaker, E.; Takahashi, J.; Wilson, K.; STAR-SVT Collaboration

    2000-01-01

    We have developed a thick film multi-chip module for readout of silicon drift (or low capacitance ˜200 fF) detectors. Main elements of the module include a custom 16-channel NPN-BJT preamplifier-shaper (PASA) and a custom 16-channel CMOS Switched Capacitor Array (SCA). The primary design criteria of the module were the minimizations of the power (12 mW/channel), noise (ENC=490 e - rms), size (20.5 mm×63 mm), and radiation length (1.4%). We will discuss various aspects of the PASA design, with emphasis on the preamplifier feedback network. The SCA is a modification of an integrated circuit that has been previously described [1]; its design features specific to its application in the SVT (Silicon Vertex Tracker in the STAR experiment at RHIC) will be discussed. The 240-channel multi-chip module is a circuit with five metal layers fabricated in thick film technology on a beryllia substrate and contains 35 custom and commercial integrated circuits. It has been recently integrated with silicon drift detectors in both a prototype system assembly for the SVT and a silicon drift array for the E896 experiment at the Alternating Gradient Synchrotron at the Brookhaven National Laboratory. We will discuss features of the module's design and fabrication, report the test results, and emphasize its performance both on the bench and under experimental conditions.

  16. Anomalous thickness variation of the foam films stabilized by weak non-ionic surfactants.

    Science.gov (United States)

    Qu, Xuan; Wang, Liguang; Karakashev, Stoyan I; Nguyen, Anh V

    2009-09-15

    The constant thickness (H) of metastable free films of various non-ionic surfactant solutions was measured at surfactant concentrations less than the critical micelle concentrations or solubility limits with fixed 5x10(-5) M sodium chloride (NaCl) serving as the background electrolyte. The surfactants include n-pentanol, n-octanol, methyl isobutyl carbinol (MIBC), polypropylene glycol (PPG-400), tetraethylene glycol monooctyl ether (C(8)E(4)), and tetraethylene glycol monodecyl ether (C(10)E(4)). H was interferometrically measured. For each surfactant in this study, the H-versus-surfactant-concentration curve finds a peak at a concentration around 5x10(-6)-1x10(-5) M and a valley at a higher concentration. The measured H values were compared to those predicted from the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory, which considers solely the contribution from electrostatic double-layer repulsion with van der Waals attraction being neglected in the present work. In determining the double-layer repulsion, the ionic strength was determined from the electrolytic conductivity measurement of the film-forming solutions and the surface potential was estimated from the zeta-potential measurement of air bubbles. It was found that the DLVO theory failed to explain the thickness variance with surfactant concentration, implying that additional non-DLVO attractive forces might be required to explain the experimental results. Finally, the possible origins of these attractive forces were discussed.

  17. Thin-Thick Film Transitions on a Planar Solid Surface: A Density Functional Study

    International Nuclear Information System (INIS)

    A weighted density functional theory is proposed to predict the surface tension and thin-thick film transition of a Lennard–Jones fluid on a planar solid surface. The underlying density functional theory for the Lennard–Jones fluid at low temperature is based on a modified fundamental measure theory for the hard-core repulsion, a Taylor expansion around zero-bulk-density for attraction, and a correlation term evaluated by the weighted density approximation with a weight function of the Heaviside step function. The predicted surface tension and thin-thick film transition agree well with the results from the Monte Carlo simulations, better than those from alternative approaches. For the Ar/CO2 system, the prewetting line has been calculated. The predicted reduced surface critical temperature is about 0.97, and the calculated wetting temperature is below the triple-point temperature. This is in agreement with the experimental observation. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. A 240-channel thick film multi-chip module for readout of silicon drift detectors

    International Nuclear Information System (INIS)

    We have developed a thick film multi-chip module for readout of silicon drift (or low capacitance ∼200 fF) detectors. Main elements of the module include a custom 16-channel NPN-BJT preamplifier-shaper (PASA) and a custom 16-channel CMOS Switched Capacitor Array (SCA). The primary design criteria of the module were the minimizations of the power (12 mW/channel), noise (ENC=490 e- rms), size (20.5 mmx63 mm), and radiation length (1.4%). We will discuss various aspects of the PASA design, with emphasis on the preamplifier feedback network. The SCA is a modification of an integrated circuit that has been previously described [1]; its design features specific to its application in the SVT (Silicon Vertex Tracker in the STAR experiment at RHIC) will be discussed. The 240-channel multi-chip module is a circuit with five metal layers fabricated in thick film technology on a beryllia substrate and contains 35 custom and commercial integrated circuits. It has been recently integrated with silicon drift detectors in both a prototype system assembly for the SVT and a silicon drift array for the E896 experiment at the Alternating Gradient Synchrotron at the Brookhaven National Laboratory. We will discuss features of the module's design and fabrication, report the test results, and emphasize its performance both on the bench and under experimental conditions

  19. Fiber laser annealing of nanocrystalline PZT thick film prepared by aerosol deposition

    International Nuclear Information System (INIS)

    Nanocrystalline PZT thick films (1 mm square and over 10 μm thick) directly deposited onto stainless-steel substrates (PZT/SUS) by aerosol deposition (AD) technique and then annealed using focused laser beam with a fiber laser to suppress thermal damage to the back sides of the PZT/SUS and substrate near the film edge and to retain the dielectric and/or ferroelectric properties of the PZT/SUS. Compared with CO2 laser annealing, fiber laser annealing suppressed thermal damage to the substrate. Compared with PZT/SUS annealed at 600 deg. C using an electric furnace, PZT/SUS annealed at 600 deg. C using a fiber laser showed superior properties, namely, dielectric constant ε > 1200 at a frequency of 100 Hz, remanent polarization Pr > 30 μC/cm2, and coercive field strength Ec < 50 kV/cm at a frequency of 10 Hz. Furthermore, the grain growth for the PZT/SUS formed by AD technique and annealed by fiber laser irradiation was occurred within the laser spot size.

  20. Thickness dependence of dispersion parameters of the MoO{sub x} thin films prepared using the vacuum evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Akın, Ümmühan, E-mail: uakin@selcuk.edu.tr; Şafak, Haluk

    2015-10-25

    The optical behaviors of molybdenum oxide thin films are highly important due to their widespread applications. In the present paper, the effect of thickness on the structure, morphology and optical properties of molybdenum oxide (MoO{sub x}) thin films prepared on Corning glass substrates using thermal evaporation technique was studied. The structure and morphology of films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively, while their optical properties were investigated by UV-VIS-NIR spectrophotometry in the spectral range from 300 to 2500 nm. It was observed that whole films have amorphous structure and also they showed rather high transmittance values reached nearly up to 90%. Absorption analysis showed two types of electronic transitions; both direct and indirect interband transition energy values of films decrease from 4.47 to 3.45 eV and from 3.00 to 2.75 eV, respectively, with increasing the film thickness, while the width of the localized states tail increases with thickness. This decrease in the band gap value can be attributed to the rising oxygen-ion vacancy densities with the thickness. The refractive indices of films were calculated from Sellmeier coefficients determined by nonlinear curve fitting method based on the measured transmittance spectral data. The dispersion of the refractive index was discussed in terms of the Wemple-DiDomenico single-oscillator model. The dispersion parameters such as average oscillator energy, E{sub o}, the dispersion energy, E{sub d}, and static refractive index n{sub o} were evaluated and they found to vary significantly with the film thickness. - Highlights: • MoO{sub x} thin films with different thickness were prepared using the vacuum evaporation technique. • The variation of fundamental absorption edge with the film thickness was determined. • A detailed dispersion analysis based on the Wemple-DiDomenico model was performed. • The dependence of all

  1. Dependence of the ferroelectric properties of modified spin-coating-derived PZT thick films on the crystalline orientation

    Science.gov (United States)

    Annapureddy, Venkateswarlu; Choi, Jong-Jin; Kim, Jong-Woo; Hahn, Byung-Dong; Ahn, Cheol-Woo; Ryu, Jungho

    2016-06-01

    The effects of crystalline orientation on the ferroelectric properties of lead zirconate titanate (PZT) thick films deposited on (111)-oriented Pt/Ti/SiO2/Si substrates by using a modified spincoating method have been studied. The texture and the microstructure of the thick films were characterized by using X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis, respectively. The XRD results implied that the texture of the PZT films was sensitive to the pyrolysis conditions after spin-coating, but less dependent on the film's thickness. The texture had mainly a (111)-orientation for pyrolysis temperatures from 330 to 400 °C, and changes in the (100)- orientation occurred for pyrolysis temperatures at or above 450 °C after annealing at 650 °C for 5 min. The formation of a preferred texture could be explained by using the intermetallic phases and the internal stress energies between the substrate and the film. The ferroelectric properties of the PZT films fabricated by using this method have been found to be enhanced as compared to those of the PZT films fabricated by using the conventional spin-coating method and to be correlated to the microstructure of the film.

  2. Bacterial flagellar motility on hydrated rough surfaces controlled by aqueous film thickness and connectedness.

    Science.gov (United States)

    Tecon, Robin; Or, Dani

    2016-01-01

    Recent studies have shown that rates of bacterial dispersion in soils are controlled by hydration conditions that define size and connectivity of the retained aqueous phase. Despite the ecological implications of such constraints, microscale observations of this phenomenon remain scarce. Here, we quantified aqueous film characteristics and bacterial flagellated motility in response to systematic variations in microhydrological conditions on porous ceramic surfaces that mimic unsaturated soils. We directly measured aqueous film thickness and documented its microscale heterogeneity. Flagellar motility was controlled by surface hydration conditions, as cell velocity decreased and dispersion practically ceased at water potentials exceeding -2 kPa (resulting in thinner and disconnected liquid films). The fragmentation of aquatic habitats was delineated indirectly through bacterial dispersal distances within connected aqueous clusters. We documented bacterial dispersal radii ranging from 100 to 10 μm as the water potential varied from 0 to -7 kPa, respectively. The observed decrease of flagellated velocity and dispersal ranges at lower matric potentials were in good agreement with mechanistic model predictions. Hydration-restricted habitats thus play significant role in bacterial motility and dispersal, which has potentially important impact on soil microbial ecology and diversity. PMID:26757676

  3. The Effect of Deposition Time on Textured Magnesium Diboride Thick Films Fabricated by Electrophoretic Deposition

    Directory of Open Access Journals (Sweden)

    W. G. Mutia

    2004-12-01

    Full Text Available MgB2 powders suspended in ethanol were electrophoretically deposited on high-purity molybdenum substrates having dimensions of 1 x 0.3 x 0.01 cm. The said substrate was set as the cathode and was placed 0.5 cm away from a graphite rod anode. A current density of ~0.02 mA/cm2 and a voltage of 600 V were applied. The effect of deposition time was studied by varying it as follows: 15 s, 30 s, 1 min, and 2 min. Heat treatment at 950 oC for 3 h was done after deposition. MgB2 thick films were successfully fabricated for the deposition carried out for 2 min. Deposition times less than 2 min resulted in insufficient deposited powder; hence formation of MgB2 was not facilitated. Films deposited at 15 and 30 s have good surface characteristics, wherein no microcracks were present. X-ray diffraction and surface image analysis reveal that the deposited films have a preferred orientation along the (10l direction.

  4. Thickness-dependent retention behaviors and ferroelectric properties of BiFeO3 thin films on BaPbO3 electrodes

    Science.gov (United States)

    Lee, Chia-Ching; Wu, Jenn-Ming

    2007-09-01

    BiFeO3 (BFO) thin films produced with varied film thicknesses ranging from 100to230nm were fabricated on BaPbO3(BPO )/Pt/Ti/SiOx/Si substrates by rf-magnetron sputtering. Saturated polarization-electrical field hysteresis loops, polarization response by pulse measurement, and retention properties were obtained for BFO films with various thicknesses on BPO. The retention behaviors of BFO demonstrate logarithmic time dependence and stretched exponential law. When the thicknesses of BFO films increase, the contribution of logarithmic time dependence to retention, the stretched exponential law becomes dominant. BFO films with thinner thickness exhibit better retention properties but possess smaller remnant polarization.

  5. Water-in-model oil emulsions studied by small-angle neutron scattering: interfacial film thickness and composition.

    Science.gov (United States)

    Verruto, Vincent J; Kilpatrick, Peter K

    2008-11-18

    The ever-increasing worldwide demand for energy has led to the upgrading of heavy crude oil and asphaltene-rich feedstocks becoming viable refining options for the petroleum industry. Traditional problems associated with these feedstocks, particularly stable water-in-petroleum emulsions, are drawing increasing attention. Despite considerable research on the interfacial assembly of asphaltenes, resins, and naphthenic acids, much about the resulting interfacial films is not well understood. Here, we describe the use of small-angle neutron scattering (SANS) to elucidate interfacial film properties from model emulsion systems. Modeling the SANS data with both a polydisperse core/shell form factor as well as a thin sheet approximation, we have deduced the film thickness and the asphaltenic composition within the stabilizing interfacial films of water-in-model oil emulsions prepared in toluene, decalin, and 1-methylnaphthalene. Film thicknesses were found to be 100-110 A with little deviation among the three solvents. By contrast, asphaltene composition in the film varied significantly, with decalin leading to the most asphaltene-rich films (30% by volume of the film), while emulsions made in toluene and methylnaphthalene resulted in lower asphaltenic contents (12-15%). Through centrifugation and dilatational rheology, we found that trends of decreasing water resolution (i.e., increasing emulsion stability) and increasing long-time dilatational elasticity corresponded with increasing asphaltene composition in the film. In addition to the asphaltenic composition of the films, here we also deduce the film solvent and water content. Our analyses indicate that 1:1 (O/W) emulsions prepared with 3% (w/w) asphaltenes in toluene and 1 wt % NaCl aqueous solutions at pH 7 and pH 10 resulted in 80-90 A thick films, interfacial areas around 2600-3100 cm (2)/mL, and films that were roughly 25% (v/v) asphaltenic, 60-70% toluene, and 8-12% water. The increased asphaltene and water film

  6. Structural and Dielectric Properties of Dy-doped( Ba, Sr, Ca) TiO3 Thick Films

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Preparation and electrocatalytic activities of Pt-TiO2 nanotubes (Ba0.57Sr0.33Ca0.10)TiO3 powders, prepared by the sol-gel method, were doped MnCO3 as acceptor and Dy2O3 as donor. This powder was mixed with an organic vehicle and BSCT thick films were fabricated by the screen-printing techniques on alumina substrate. The structural and dielectric properties of BSCT thick films were investigated with variation of Dy2O3 amount. As a result of the differential thermal analysis (DTA), exothermic peak was observed at around 670℃ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films showed the XRD patterns of a typical polycrystalline perovskite structure. The average grain size of BSCT thick films decreased with increasing amount of Dy2O3. The relative dielectric constant and dielectric loss of the BSCT thick film doped Dy2O3 0. 1mol% were 4637.4 and 1.6% at 1kHz, respectively.

  7. Effect of thickness and cold substrate on transport properties of thermally evaporated CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    El-Mongy, A.Abd; Hashem, H.M.; Ramadan, A.A. [Physics Department, Faculty of Science, Helwan University, Helwan, Cairo (Egypt)

    2005-08-01

    The correlation between the structural characteristics (stoichiometry and crystallite size) of CdTe films and their electronic transport properties were the aims of the present study to bring attention to the dual importance of grain size and conversion of the semiconductivity type with changing film thickness. Two main parameters were considered: the substrate temperature and film thickness. Transport properties were influenced by grain boundaries as well as by native doping. Optical measurements showed two main direct transitions at energies: E{sub 1} {approx}1.55 eV (fundamental gap) and E{sub 2}{approx}2.49 eV (due to valence band splitting). Both transitions were found to be thickness dependent with a marked change at a film thickness of about 300 nm. In the case of low substrate temperature, the scaling relation between resistivity and grain size showed a deviation from linear behavior at a size of 20 nm and the transmission coefficient is reduced. Also, the deposition on cold substrate enhanced both dark and photoconductivity for films of thickness {>=}300 nm. It is also proved that the carrier transport was affected by the transmission coef-ficient for carriers to pass a single grain boundary as well as the number of grain boundaries per mean free path. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Thickness Determination for a Two-Layered Composite of a Film and a Plate by Low-Frequency Ultrasound

    Institute of Scientific and Technical Information of China (English)

    MAO Jie; LI Ming-Xuan; WANG Xiao-Min

    2007-01-01

    We present an ultrasonic method for determining the thickness of a composite consisting of a soft thin film attached to a hard plate substrate, by resonance spectra in the low frequency region. The interrogating waves can be incident only to the two-layered composite from the substrate side. The reflection spectra are obtained by FFT analysis of the compressive pulsed echoes from the composite, and the thicknesses of the film and the substrate are simultaneously inversed by the simulated annealing method from the resonant frequencies knowing other acoustical parameters in prior. The sensitivity of the method to individual thickness, its convergence and stability against experimental noises are studied. Experiment with interrogating wavelength 4 times larger than the film thickness in a sample of a polymer film (0.054 mm) on an aluminium plate (6.24 mm) verifies the validity of the method. The average relative errors in the measurement of the thicknesses of the film and the substrate are found to be -4.1% and -0.62%, respectively.

  9. Antiferroelectric-to-Ferroelectric Switching in CH3NH3PbI3 Perovskite and Its Potential Role in Effective Charge Separation in Perovskite Solar Cells

    Science.gov (United States)

    Sewvandi, Galhenage A.; Hu, Dengwei; Chen, Changdong; Ma, Hao; Kusunose, Takafumi; Tanaka, Yasuhiro; Nakanishi, Shunsuke; Feng, Qi

    2016-08-01

    Perovskite solar cells (PSCs) often suffer from large performance variations which impede to define a clear charge-transfer mechanism. Ferroelectric polarization is measured numerically using CH3NH3PbI3 (M A PbI3 ) pellets to overcome the measurement issues such as pinholes and low uniformity of thickness, etc., with M A PbI3 thin films. M A PbI3 perovskite is an antiferroelectric semiconductor which is different from typical semiconducting materials and ferroelectric materials. The effect of polarization carrier separation on the charge-transfer mechanism in the PSCs is elucidated by using the results of ferroelectric and structural studies on the perovskite. The ferroelectric polarization contributes to an inherent carrier-separation effect and the I - V hysteresis. The ferroelectric and semiconducting synergistic charge-separation effect gives an alternative category of solar cells, ferroelectric semiconductor solar cells. Our findings identify the ferroelectric semiconducting behavior of the perovskite absorber as being significant to the improvement of the ferroelectric PSCs performances in future developments.

  10. Thick REBaCuO superconducting films through single-coating of low-fluorine metallorganic solution

    Science.gov (United States)

    Boubeche, M.; Cai, C. B.; Jian, H. B.; Li, M. J.; Yang, W. T.; Liu, Z. Y.; Bai, C. Y.

    2016-10-01

    A high critical current Ic is crucial for the application of high temperature superconductors YBa2Cu3O7-δ in energy efficient power devices and wires. In this paper we report the fabrication of thick (YGd)1.3Ba2Cu3O7-x films on a metal substrate using low-fluorine metal organic deposition method. The effects of the film thickness on the microstructure, texture and superconductivity properties of the films were evaluated. In order to increase the film thicknesses by single coating, the influence of withdrawal speed during the dip coating on resulting thickness are investigated with the other processing parameters fixed. It is revealed that there is a maximum thickness for a certain starting solution. Here we used 3 different solutions, Conventional Low Fluorine solutions with 2 M and 2.5 M, and super low-fluorine solution with 2.5 M. The maximum thicknesses of about 710 nm, 1280 nm and 1460 nm were obtained, respectively.

  11. Influence of thickness and air annealing on structural, morphological, compositional, electrical properties of sprayed TiO2 thin films

    Directory of Open Access Journals (Sweden)

    R.SHASHIDHAR

    2013-04-01

    Full Text Available TiO2 thin films were prepared by spray pyrolysis technique at a substrate temperature of 3500C under optimum conditions. Films have uniform thickness varying from 0.3–6 μm and good adhesion to substrate. The films were characterized by XRD, SEM and EDAX measurements. XRD profile shows poly crystalline nature of films. As deposited films have anatase phase. Transformation from anatase to anatase–rutile mixed phase may be due to annealing at 4000C and thickness variation of films. The microstructural properties such as crystallite size, microstrain and dislocation density found to increase due to concentration of lattice imperfections and crystallization of amorphous TiO2 films. SEM micrographs exhibit spherical, square, flower shaped grains and grain boundary formation. EDAX analysis revealed the formation of stoichiometric TiO2 films. Electrical studies show that the films are of n-type nature and increase in resistivity is attributed to surface oxidation and formation of Ti2O3 structure, a perfect insulator.

  12. Structural properties of screen printed Nd/sub 2/Si/sub 2/O/sub 7/ thick films

    International Nuclear Information System (INIS)

    Nd/sub 2/Si/sub 2/O/sub 7/ thick films have been prepared by screen printing method. Thick films/coatings were deposited on Si (100), stainless steel and fused silica substrates from a mixture-paste made of SiO/sub 2/ and Nd/sub 2/O/sub 3/ powders. The samples were sintered at varying temperatures from 900 to 1200 /sup o/C in air. About 80 micro m thick films were characterized by IR spectroscopy, x-ray diffraction, and optical microscopy. Tetragonal type-A structure of Nd/sub 2/Si/sub 2/O/sub 7/, films with lattice constants a = b 6.8 degree A and c = 24.7 degree A were obtained for samples sintered at 1000 /sup o/C for 140 hrs. Films had rough surfaces and found to be dull reflector of light. Moisturized films showed IR absorption band in 1600-3000 cm-1 range otherwise no IR active modes were detected. Films were found to be brittle and showed poor adhesion to Si (100) substrates. (author)

  13. Thickness-dependence of optical constants for Ta{sub 2}O{sub 5} ultrathin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao [Fudan University, Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Department of Optical Science and Engineering, Shanghai (China)

    2012-09-15

    An effective method for determining the optical constants of Ta{sub 2}O{sub 5} thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta{sub 2}O{sub 5} thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta{sub 2}O{sub 5} ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta{sub 2}O{sub 5}. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices. (orig.)

  14. Influence of Ag thickness of aluminum-doped ZnO/Ag/aluminum-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hung-Wei, E-mail: hwwu@mail.ksu.edu.tw [Department of Computer and Communication, Kun Shan University, No. 949, Dawan Rd., Yongkang Dist., Tainan City 710, Taiwan (China); Yang, Ru-Yuan [Graduate Institute of Materials Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China); Hsiung, Chin-Min; Chu, Chien-Hsun [Department of Mechanical Engineering, National Pingtung University of Science and Technology, 1, Shuefu Rd., Neipu, Pingtung City 912, Taiwan (China)

    2012-10-01

    Highly conducting aluminum-doped ZnO (30 nm)/Ag (5-15 nm)/aluminum-doped ZnO (30 nm) multilayer thin films were deposited on glass substrate by rf magnetron sputtering (for top/bottom aluminum-doped ZnO films) and e-beam evaporation (for Ag film). The transmittance is more than 70% for wavelengths above 400 nm with the Ag layer thickness of 10 nm. The resistivity is 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm, which can be decreased to 3.8 Multiplication-Sign 10{sup -5} {Omega}-cm with the increase of the Ag layer thickness to 15 nm. The Haacke figure of merit has been calculated for the films with the best value being 8 Multiplication-Sign 10{sup -3} {Omega}{sup -1}. It was shown that the multilayer thin films have potential for applications in optoelectronics. - Highlights: Black-Right-Pointing-Pointer High-quality Al-doped ZnO (AZO)/Ag/AZO Transparent Conducting Oxide films. Black-Right-Pointing-Pointer AZO films (30 nm) made by RF sputtering; E-beam evaporation for Ag film (5-15 nm). Black-Right-Pointing-Pointer Influence of Ag thickness on optical and electrical properties were analyzed. Black-Right-Pointing-Pointer High quality multilayer film with optimal intermediate Ag layer thickness of 10 nm. Black-Right-Pointing-Pointer 3.71 Multiplication-Sign 10{sup -4} {Omega}-cm resistivity, 91.89% transmittance at 470 nm obtained and reproducible.

  15. Fabrication of YBCO/YSZ and YBCO/MgO thick films using electrophoretic deposition with top-seeded melt growth process

    Institute of Scientific and Technical Information of China (English)

    Zhu Ya-Bin; Zhou Yue-Liang; Wang Shu-Fang; Liu Zhen; Zhang Qin; Chen Zheng-Hao; Lü Hui-Bin; Yang Guo-Zhen

    2004-01-01

    Superconducting thick films were grown on single crystals MgO and YSZ by electrophoretic deposition with Y2BaCuOs(Y211) addition. YBCO thick films were then accomplished by sintering the precursor films above the peritectic temperature. Single crystals of MgO (3×3×0.5mm3) were used as top-seed to control crystal structure of the thick films. As shown by scanning electron microscopy, the morphologies of YBCO/YSZ and YBCO/MgO thick films are spherulitic texture and platelet type. The critical temperature is ~89 K for the YBCO/YSZ thick film; the onset transition temperature is 86.4 K and the transition width is ~3 K for YBCO/MgO thick film. The critical current densities (as determined by Bean model) are, in A/cm2, 3870 (77K) for YBCO/YSZ thick films and 2399 (77K) for YBCO/MgO thick films, which are comparable to the best Jc reported of the thick films prepared by the same method.

  16. Thickness-Dependent Properties of YBCO Films Grown on GZO/CLO-Buffered NiW Substrates

    DEFF Research Database (Denmark)

    Malmivirta, M.; Huhtinen, H.; Yue, Zhao;

    2016-01-01

    To study the role of novel Gd2Zr2O7/Ce0.9La0.1O2 buffer layer structure on a biaxially textured NiW substrate, a set of YBa2Cu3O7−δ (YBCO) films with different thicknesses were prepared by pulsed laser deposition (PLD). Interface imperfections as well as thickness-dependent structural properties...... be successfully used for films with various thicknesses. This issue is linked to the extremely susceptible growth method of PLD when compared to the commonly used chemical deposition methods. Nevertheless, PLD-grown films can give a hint on what to concentrate to be able to further improve the buffer layer...

  17. Phase Shift of a Coplanar Waveguide by Bias Voltage on Thick Lead Zirconate Titanate Film at Microwave Frequency

    Science.gov (United States)

    Shibata, Kouji; Iijima, Takashi; Masuda, Yoichiro

    2008-09-01

    A coplanar waveguide was fabricated by depositing a 1-µm-thick Au film on a multilayer dielectric, consisting of a 2-µm-thick lead zirconate titanate (PZT) film over an Al2O3 substrate, through etching. Following this, the reflection constant, transmission constant, and phase variation were measured for this transmission line as bias voltage was varied from 30 to 50 V. As a result, it was confirmed that the phase variation becomes about 15° at a 50 V bias at a frequency of 10 GHz. We then confirmed the basic input-output characteristics of this type of structure in the microwave band. Finally, the relative permittivity of a PZT thick film as a coplanar waveguide was estimated using the measurement results of relative permittivity according to the split cavity resonator method, and phase variation under the condition in which a bias voltage was applied.

  18. Determination of Thickness and Optical Constants of ZnO Thin Films Prepared by Filtered Cathode Vacuum Arc Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Ming-Dong; ZHU Dao-Yun; LIU Yi; ZHANG Lin; ZHENG Chang-Xi; HE Zhen-Hui; CHEN Di-Hu; WEN Li-Shi

    2008-01-01

    ZnO thin films are prepared on glass substrates by filtered cathode vacuum arc (FCVA) deposition technique.A new method is demonstrated to extract the refractive index,thickness and optical band gap of ZnO thin films from the transmission spectrum alone.The refractive index is calculated from the extremes of the interference fingers.The transmission spectrum is divided into two terms,non-lnterference term and interference effect term.The thickness of thin films is calculated by simulating the interference term,and the non-interference term is used to calculate optical band gap with the gained thickness.The results are compared with measurements by using an ellipsometry and a scanning electron microscope.

  19. Study of ferroelectric-thin-film thickness effects on metal-ferroelectric-SiO2-Si transistors

    Science.gov (United States)

    Lin, Yih-Yin; Singh, Jasprit

    2002-06-01

    This article examines the thickness effects of ferroelectric films on gate tunneling suppression and charge control in metal-ferroelectric-insulator-semiconductor field-effect transistors (MFISFETs). The formalism used is based on a blocking-layer model for the ferroelectric film and a self-consistent solution of the Poisson and Schrödinger equation. We show that with a polar ferroelectric the threshold voltage of the FET can be altered by controlling the ferroelectric film thickness. We also study the thickness dependence of the capacitance-voltage curve and the surface charge density and the effects of ferroelectric hysteresis. The tunneling probability and leakage current calculation in a MFISFET device are provided in this article. Ferroelectrics-based transistors show higher sheet charges and lower tunneling currents than oxide-based devices.

  20. Improvement of a wall thinning rate model for liquid droplet impingement erosion. Implementation of liquid film thickness model with consideration of film behavior

    International Nuclear Information System (INIS)

    Liquid droplet impingement erosion (LDI) is defined as an erosion phenomenon caused by high-speed droplet attack in a steam flow. Pipe wall thinning by LDI is sometimes observed in a steam piping system of a power plant. As LDI usually occurs very locally and is difficult to detect, predicting LDI location is required for safe operation of power plant systems. Therefore, we have involved in the research program to develop prediction tools that will be used easily in actual power plants. Our previous researches developed a thinning rate evaluation model due to LDI (LDI model) and the evaluation system of the thinning rate and the thinning shape within a practically acceptable time (LDI evaluation system). Though the LDI model can include a cushioning effect of liquid film which is generated on the material surface by droplet impingement as an empirical equation with fluid parameter, the liquid film thickness is not clarified due to complex flow condition. In this study, to improve the LDI model and the LDI evaluation system, an analytical model of the liquid film thickness was proposed with consideration of the liquid film flow behavior on the material surface. The mass balance of the liquid film was considered, and the results of CFD calculations and existing researches were applied to obtain the liquid film thickness in this model. As a result of the LDI evaluation of the new LDI model with liquid film model, improvement of the LDI model was achieved. (author)

  1. Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Borregaard, Louise M.;

    2012-01-01

    This paper presents a homogeneity analysis of a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibration energy harvesters aimed towards vibration sources with peak vibrations in the range of around 300Hz. A wafer with a yield of 91% (41/45 devices) has been...... indicating that the main variation in open circuit voltage performance is caused by varying quality factor. The average resonant frequency was measured to 333Hz with a standard variation of 9.8Hz and a harvesting bandwidth of 5-10Hz. A maximum power output of 39.3μW was achieved at 1g for the best performing...... harvester....

  2. Piezoelectric and Magnetoelectric Thick Films for Fabricating Power Sources in Wireless Sensor Nodes

    Science.gov (United States)

    Priya, Shashank; Ryu, Jungho; Park, Chee-Sung; Oliver, Josiah; Choi, Jong-Jin; Park, Dong-Soo

    2009-01-01

    In this manuscript, we review the progress made in the synthesis of thick film-based piezoelectric and magnetoelectric structures for harvesting energy from mechanical vibrations and magnetic field. Piezoelectric compositions in the system Pb(Zr,Ti)O3–Pb(Zn1/3Nb2/3)O3 (PZNT) have shown promise for providing enhanced efficiency due to higher energy density and thus form the base of transducers designed for capturing the mechanical energy. Laminate structures of PZNT with magnetostrictive ferrite materials provide large magnitudes of magnetoelectric coupling and are being targeted to capture the stray magnetic field energy. We analyze the models used to predict the performance of the energy harvesters and present a full system description. PMID:22454590

  3. Design guidelines for advanced LSI microcircuit packaging using thick film multilayer technology

    Science.gov (United States)

    Peckinpaugh, C. J.

    1974-01-01

    Ceramic multilayer circuitry results from the sequential build-up of two or more layers of pre-determined conductive interconnections separated by dielectric layers and fired at an elevated temperature to form a solidly fused structure. The resultant ceramic interconnect matrix is used as a base to mount active and passive devices and provide the necessary electrical interconnection to accomplish the desired electrical circuit. Many methods are known for developing multilevel conductor mechanisms such as multilayer printed circuits, welded wire matrices, flexible copper tape conductors, and thin and thick-film ceramic multilayers. Each method can be considered as a specialized field with each possessing its own particular set of benefits and problems. This design guide restricts itself to the art of design, fabrication and assembly of ceramic multilayer circuitry and the reliability of the end product.

  4. Irradiation effect of Co-60 gamma rays in YBCO thick films

    International Nuclear Information System (INIS)

    Galvanomagnetic properties of YBa2Cu3O7-δ thick films under the action of 60Co γ-rays up to an exposure of 450 kGy are reported. The variation of physical parameters such as resistivity in the normal state, critical temperature and critical current density, as well as the increase of pinning energies with irradiation, suggests that these property changes are dominated by irradiated-induced randomly distributed oxygen defects. The three-dimensional collective pinning theory is used along with some approximations to estimate the pinning energies and critical current density. A comparison of the experimental data with the theoretical predictions demonstrates the importance of irradiation-induced oxygen defects as effective pinning centres. (author)

  5. Piezoelectric and Magnetoelectric Thick Films for Fabricating Power Sources in Wireless Sensor Nodes

    Directory of Open Access Journals (Sweden)

    Jong-Jin Choi

    2009-08-01

    Full Text Available In this manuscript, we review the progress made in the synthesis of thick film-based piezoelectric and magnetoelectric structures for harvesting energy from mechanical vibrations and magnetic field. Piezoelectric compositions in the system Pb(Zr,TiO3–Pb(Zn1/3Nb2/3O3 (PZNT have shown promise for providing enhanced efficiency due to higher energy density and thus form the base of transducers designed for capturing the mechanical energy. Laminate structures of PZNT with magnetostrictive ferrite materials provide large magnitudes of magnetoelectric coupling and are being targeted to capture the stray magnetic field energy. We analyze the models used to predict the performance of the energy harvesters and present a full system description.

  6. Peak Position of Photoluminescence of Si Nanocrystals versus Thickness of SiOx Thin Films

    Institute of Scientific and Technical Information of China (English)

    方应翠; 李维卿; 漆乐俊; 章壮健; 陆明

    2003-01-01

    Peak position of photoluminescence (PL) of Si nanocrystals was found to change in an exponential decay form with the increasing thickness of SiOx (0 < x < 2) thin films. The results were interpreted in terms of a model modified from the theory of Zacharias-Streitenberger (Phys. Rev. B 62 (2000) 8391) from an energetic viewpoint.It was inferred from our model that under certain conditions regarding the energies of interfaces between the substrate and Si clusters and between the matrix and the Si clusters, the further the Si cluster away from the substrate, the larger the nc-Si size until saturation is reached. This conclusion explains our PL observations according to the quantum confinement effect.

  7. Flux-flow noise driven by quantum fluctuations in a thick amorphous film

    Energy Technology Data Exchange (ETDEWEB)

    Okuma, S. [Research Center for Low Temperature Physics, Tokyo Institute of Technology, 2-12-1 Ohokayama, Meguro-ku, Tokyo 152-8551 (Japan)]. E-mail: sokuma@o.cc.titech.ac.jp; Kainuma, K. [Research Center for Low Temperature Physics, Tokyo Institute of Technology, 2-12-1 Ohokayama, Meguro-ku, Tokyo 152-8551 (Japan); Kishimoto, T. [Research Center for Low Temperature Physics, Tokyo Institute of Technology, 2-12-1 Ohokayama, Meguro-ku, Tokyo 152-8551 (Japan); Kohara, M. [Research Center for Low Temperature Physics, Tokyo Institute of Technology, 2-12-1 Ohokayama, Meguro-ku, Tokyo 152-8551 (Japan)

    2006-10-01

    We measure the voltage-noise spectrum S {sub V}(f) (where f is a frequency) as well as the time (t)-dependent component {delta}V(t) of the flux-flow voltage in the low temperature liquid phase of a thick amorphous Mo {sub x}Si{sub 1-x} film. In the quantum-liquid phase both the amplitude vertical bar {delta}V vertical bar of voltage fluctuations and the asymmetry of the probability distribution of {delta}V(t) show an anomalous increase; the spectral shape of S {sub V}(f) is of a Lorentzian type, suggesting the shot-noise-like vortex motion with a large 'vortex-bundle size' and short characteristic time.

  8. Micro-particle manipulation by single beam acoustic tweezers based on hydrothermal PZT thick film

    Directory of Open Access Journals (Sweden)

    Benpeng Zhu

    2016-03-01

    Full Text Available Single-beam acoustic tweezers (SBAT, used in laboratory-on-a-chip (LOC device has promising implications for an individual micro-particle contactless manipulation. In this study, a freestanding hydrothermal PZT thick film with excellent piezoelectric property (d33 = 270pC/N and kt = 0.51 was employed for SBAT applications and a press-focusing technology was introduced. The obtained SBAT, acting at an operational frequency of 50MHz, a low f-number (∼0.9, demonstrated the capability to trap and manipulate a micro-particle sized 10μm in the distilled water. These results suggest that such a device has great potential as a manipulator for a wide range of biomedical and chemical science applications.

  9. DEPENDENCE OF DOMAIN STRUCTURES ON Au THICKNESS IN Co/Au MULTILAYER FILMS

    Institute of Scientific and Technical Information of China (English)

    1998-01-01

    The magnetic force images and surface topography images of sputtered Co/Au multilayer films in remnant state were measured by magnetic force microscopy. From the surface magnetic structures shown in the magnetic force images it can be seen that the domain pattern and size vary with the increase of the thickness t of the non-ferromagnetic Au layer remarkably. With the measurements of the effective perpendicular anisotropy Ku and the domain period d, it was found that there are similar trends of d and Ku as functions of t. The variations of the domain pattern and size were qualitatively interpreted in terms of magnetic domain theory, the theoretical relations of d and the domain wall energy ow vs t were calculated. As t = 8.5 AL(1AL=0.235nm), the largest ow is 11mJ/m2.

  10. Piezoelectric and magnetoelectric thick films for fabricating power sources in wireless sensor nodes.

    Science.gov (United States)

    Priya, Shashank; Ryu, Jungho; Park, Chee-Sung; Oliver, Josiah; Choi, Jong-Jin; Park, Dong-Soo

    2009-01-01

    In this manuscript, we review the progress made in the synthesis of thick film-based piezoelectric and magnetoelectric structures for harvesting energy from mechanical vibrations and magnetic field. Piezoelectric compositions in the system Pb(Zr,Ti)O(3)-Pb(Zn(1/3)Nb(2/3))O(3) (PZNT) have shown promise for providing enhanced efficiency due to higher energy density and thus form the base of transducers designed for capturing the mechanical energy. Laminate structures of PZNT with magnetostrictive ferrite materials provide large magnitudes of magnetoelectric coupling and are being targeted to capture the stray magnetic field energy. We analyze the models used to predict the performance of the energy harvesters and present a full system description. PMID:22454590

  11. Generation of Bessel Surface Plasmon Polaritons in a Finite-Thickness Metal Film

    Directory of Open Access Journals (Sweden)

    S. N. Kurilkina

    2013-01-01

    Full Text Available A theory of generation of low- and high-index Bessel surface plasmon polaritons and their superposition in a metal film of a finite thickness is developed. Correct analytical expressions are obtained for the field of two families of Bessel surface plasmon polariton modes formed inside and outside the metal layer. The intensity distribution near the boundary of the layer has been calculated and analyzed. A scheme for the experimental realization of a superposition of Bessel surface plasmon polaritons is suggested. Our study demonstrates that it is feasible to use the superposition of Bessel surface plasmon polaritons as a virtual tip for near-field optical microscopy with a nanoscale resolution.

  12. Anti-Ferroelectric Ceramics for High Energy Density Capacitors

    Directory of Open Access Journals (Sweden)

    Aditya Chauhan

    2015-11-01

    Full Text Available With an ever increasing dependence on electrical energy for powering modern equipment and electronics, research is focused on the development of efficient methods for the generation, storage and distribution of electrical power. In this regard, the development of suitable dielectric based solid-state capacitors will play a key role in revolutionizing modern day electronic and electrical devices. Among the popular dielectric materials, anti-ferroelectrics (AFE display evidence of being a strong contender for future ceramic capacitors. AFE materials possess low dielectric loss, low coercive field, low remnant polarization, high energy density, high material efficiency, and fast discharge rates; all of these characteristics makes AFE materials a lucrative research direction. However, despite the evident advantages, there have only been limited attempts to develop this area. This article attempts to provide a focus to this area by presenting a timely review on the topic, on the relevant scientific advancements that have been made with respect to utilization and development of anti-ferroelectric materials for electric energy storage applications. The article begins with a general introduction discussing the need for high energy density capacitors, the present solutions being used to address this problem, and a brief discussion of various advantages of anti-ferroelectric materials for high energy storage applications. This is followed by a general description of anti-ferroelectricity and important anti-ferroelectric materials. The remainder of the paper is divided into two subsections, the first of which presents various physical routes for enhancing the energy storage density while the latter section describes chemical routes for enhanced storage density. This is followed by conclusions and future prospects and challenges which need to be addressed in this particular field.

  13. Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Park, Taesoon; Kim, Dongsik, E-mail: dskim87@postech.ac.kr

    2015-03-02

    Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10{sup −4} Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively.

  14. Diametral tensile strength and film thickness of an experimental dental luting agent derived from castor oil

    Directory of Open Access Journals (Sweden)

    Juliana Cabrini Carmello

    2012-02-01

    Full Text Available The need to develop new dental luting agents in order to improve the success of treatments has greatly motivated research. OBJECTIVE: The aim of this study was to evaluate the diametral tensile strength (DTS and film thickness (FT of an experimental dental luting agent derived from castor oil (COP with or without addition of different quantities of filler (calcium carbonate - CaCO3. MATERIAL AND METHODS: Eighty specimens were manufactured (DTS N=40; FT N=40 and divided into 4 groups: Pure COP; COP 10%; COP 50% and zinc phosphate (control. The cements were mixed according to the manufacturers' recommendations and submitted to the tests. The DTS test was performed in the MTS 810 testing machine (10 KN, 0.5 mm/min. For FT test, the cements were sandwiched between two glass plates (2 cm² and a load of 15 kg was applied vertically on the top of the specimen for 10 min. The data were analyzed by means of one-way ANOVA and Tukey's test (α=0.05. RESULTS: The values of DTS (MPa were: Pure COP- 10.94±1.30; COP 10%- 30.06±0.64; COP 50%- 29.87±0.27; zinc phosphate- 4.88±0.96. The values of FT (µm were: Pure COP- 31.09±3.16; COP 10%- 17.05±4.83; COP 50%- 13.03±4.83; Zinc Phosphate- 20.00±0.12. One-way ANOVA showed statistically significant differences among the groups (DTS - p=1.01E-40; FT - p=2.4E-10. CONCLUSION: The experimental dental luting agent with 50% of filler showed the best diametral tensile strength and film thickness.

  15. In vitro analysis of the cement film thickness of two endodontic sealers in the apical region

    Directory of Open Access Journals (Sweden)

    Garcia Lucas da Fonseca

    2009-01-01

    Full Text Available Objectives : The objective of the present study was to evaluate in vitro film thickness of two endodontic sealers containing epoxy-resin and zinc-oxide-eugenol, respectively in the apical region of the root canal system. Materials and Methods : A total of 20 palatine roots of the first maxillary molars were submitted to instrumentation up to a #40 file by the step-back technique and irrigated with 2 ml of NaOCl after each change of file. The roots were divided at random into two groups of 10 elements; one group was sealed with the Sealer 26® cement and the other one with the EndoFill® cement using the classical technique. The roots were abraded in the apical region until exposure of the filling and cut crosswise at 3 mm to obtain samples. The samples were analyzed by optic microscopy with 40X magnification. The images obtained were recorded using the Adobe Premiere 5.1® software and submitted to morphometric analysis using an integration grid that permitted the quantification of the area filled with the sealer or gutta-percha, and eventual empty spaces. Results : Statistical analysis of the data (Kruskal-Wallis test, P < 0.05 revealed no significant differences between the epoxy-resin-based cement Sealer 26® (47.85% and the zinc- oxide- eugenol-based cement EndoFill® (54.16%. Conclusion : We conclude that the two sealers tested showed a similar behavior regarding the cement film thickness in the apical region.

  16. Coexistence of several structural phases in MOCVD TiO{sub 2} layers: evolution from nanometre to micrometre thick films

    Energy Technology Data Exchange (ETDEWEB)

    Brevet, A; Marco de Lucas, M C; Potin, V; Chassagnon, R; Imhoff, L; Domenichini, B; Bourgeois, S, E-mail: delucas@u-bourgogne.f [Institut Carnot de Bourgogne, UMR 5209 CNRS-Universite de Bourgogne, 9 Av. A. Savary, BP 47 870, F-21078 DIJON Cedex (France)

    2009-09-07

    The morphology and the structure of TiO{sub 2} films, grown on Si (1 0 0) substrates by metal organic chemical vapour deposition (MOCVD) was investigated in 5-500 nm thick films. It was shown that the TiO{sub 2} layer is mainly amorphous at the first stages of deposition. The growth of nanocrystallites begins inside the amorphous TiO{sub 2} layer, and it continues at the expense of the amorphous phase until the crystallized grains occupy the whole layer. Then, the film growth continues with a columnar structure. The coexistence of anatase and rutile phases was evidenced from the beginning of the growth by high resolution transmission electron microscopy and grazing incidence x-ray diffraction. However, the anatase growth overcomes that of rutile, leading to an inhomogeneous phase distribution as a function of the film thickness.

  17. A review on the understanding and fabrication advancement of MgB2 thin and thick films by HPCVD

    International Nuclear Information System (INIS)

    MgB2 thin films with superior superconducting properties are very promising for superconducting magnets, electronic devices and coated conductor electric power applications. A clear understanding of flux pinning mechanism in MgB2 films could be a big aid in improving the performance of MgB2 by the enhancement of Jc. The fabrication advancement and the understanding of flux pinning mechanism of MgB2 thin and thick films fabricated by using hybrid physical-chemical vapor deposition (HPCVD) are reviewed. The distinct kind of MgB2 films, such as single-crystal like MgB2 thin films, MgB2 epitaxial columnar thick films, and a-axis-oriented MgB2 films are included for flux pinning mechanism investigation. Various attempts made by researchers to improve further the flux pinning property and Jc performance by means of doping in MgB2 thin films by using HPCVD are also summarized

  18. The thickness dependence of the crystallization behavior in sandwiched amorphous Ge2Sb2Te5 thin films

    Science.gov (United States)

    Bai, G.; Li, R.; Xu, H. N.; Xia, Y. D.; Liu, Z. G.; Lu, H. M.; Yin, J.

    2011-12-01

    The thickness dependent crystallization behavior of thin amorphous Ge2Sb2Te5(GST) films sandwiched between different cladding materials has been investigated based on a thermodynamic model. It is revealed that there is a critical thickness below which the crystallization cannot occur. The critical thickness is determined by the energy difference Δγ between the crystalline GST/substrate interface energy and the amorphous GST/substrate interface energy, the melting enthalpy, and the mole volume. The calculated result is in good agreement with the experiments. Furthermore, the crystallization temperature is also affected by interface energy difference Δγ. Larger Δγ gives rise to a higher crystallization temperature, and vice versa. This impact becomes stronger as the film thickness is decreased.

  19. Single crystals of fullerene (C60 makes organic thick film solar cells and self supporting organic solar cells possible.

    Directory of Open Access Journals (Sweden)

    M. Umeno

    2008-06-01

    Full Text Available Single crystals of Fullerene (SC-C60 were synthesized by simple liquid/liquid interface precipitation method. Organic thick film solar cell (with an active layer thickness of approximately 20 microns thick is demonstrated by combining SC-C60 with poly(3-octylthiophene. Our preliminary results indicate that organic thick film solar cells are possible; which were considered to be impossible due to low mobility and small exciton diffusion lengths in most of the organic materials including small organic molecules and conjugated conducting polymers. Further, SC-C60 seems to be promising materials for organic photovoltaics. Self supporting organic solar cell is also demonstrated using SC-C60.

  20. The thickness-dependent dynamic magnetic property of Co2FeAl films grown by molecular beam epitaxy

    Science.gov (United States)

    Qiao, Shuang; Nie, Shuaihua; Zhao, Jianhua; Zhang, Xinhui

    2014-10-01

    Co2FeAl films with different thickness were prepared at different temperature by molecular beam epitaxy. Their dynamic magnetic property was studied by the time-resolved magneto-optical Kerr effect measurements. It is observed that the intrinsic damping factor of Co2FeAl for [100] orientation is not related to the film's thickness and magnetic anisotropy as well as temperature at high-field regime, but increases with structural disorder of Co2FeAl. The dominant contribution from the inhomogeneous magnetic anisotropy is revealed to be responsible for the observed extremely nonlinear and drastic field-dependent damping factors at low-field regime.

  1. In vivo sweat film layer thickness measured with Fourier-domain optical coherence tomography (FD-OCT)

    Science.gov (United States)

    Jonathan, Enock

    2008-06-01

    While human sweat secretion is accepted as a mechanism by which the body cools off, excessive sweating (hyperhidrosis) is now appreciated as a medical condition and the primary site for diagnosis is the palm of the hand. We propose sweat film layer thickness as a potential clinical diagnostic parameter when screening for excessive sweating. In this preliminary study we demonstrate the usefulness of Fourier-domain optical coherence tomography (FD-OCT) for measurement of sweat film thickness in vivo with micron-scale resolution on the hand of a human volunteer. FD-OCT has a superior image acquisition time and identification of active sweat glands, ducts and pores is also possible.

  2. Response of indium oxide and silicon oxide thick film pn-junctions to gamma radiation exposure

    International Nuclear Information System (INIS)

    Indium oxide (In2O3) and silicon oxide (SiO) mixtures in the form of thick films pn-junctions were investigated for gamma radiation dosimetry purposes. Polymer pastes of In2O3 and SiO mixtures in various proportions were made of 92 wt.% of functional material and 8 wt.% of PVB, while ethylenglycolmonobutylether was used as a solvent. Raman spectroscopy and X-diffraction (XRD) of the films readily endorses the formation of a mixed silicon oxide and indium oxide coating. Both Raman spectroscopy and XRD prove that SiO is present in an amorphous state.The pastes were screen-printed on p-type silicon wafers to form pn-junctions. A p-type substrate was one-side polished P silicon wafer with dopant level of 1015 cm-3 on polished side and 1018 cm-3 on unpolished side. All devices were exposed to the disc-type 137Cs source with an activity of 370 kBq. The I-V characteristics for the samples were measured after each exposure dose. Results show that the current is increased with the increase in radiation dose to a certain level, exceeding this level resulted in unstable dosimetric characteristics and device damage. The performance parameters of the devices, such as sensitivity to γ-radiation exposure and working dose region, were found to be highly dependent on the composition of the materials used. (author)

  3. Effect of the Thickness of Insulator Polymeric Films on the Memory Behavior: The Case of the Polymethylmethacrylate and the Polystyrene

    Directory of Open Access Journals (Sweden)

    J. A. Avila-Niño

    2011-01-01

    Full Text Available The effect of thickness variation on the memory behavior of the polymethylmethacrylate-(PMMA-based devices has been investigated. The PMMA film thicknesses have been varied between 5 to 300 nm, and we have found that the film thickness determines the type of behavior: ohmic, write-once-read-many-times (WORM memory with two ON states, WORM memory with a negative differential resistance (NDR region, and WORM memory without NDR region. The fact that similar results were obtained using different solvents to dilute PMMA (chlorobenzene, chloroform, and dimethyl sulfoxide, as well as using an other insulating polymer such as polystyrene (PS, leads to the conclusion that the phenomenon of memory depends on the aluminum electrodes, organic film thickness, and the compliance current used during the electroformation whereas the type of organic layer (PMMA or PS has minor influence. From here, we conclude that the conductivity switching of the insulator organic film is due to the injection of aluminum particles into the film during the first voltage cycle.

  4. Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO{sub 3} films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Tianqi; Ganguly, Koustav; Marshall, Patrick; Xu, Peng; Jalan, Bharat [Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2013-11-18

    We report on the study of the critical thickness and the strain relaxation in epitaxial SrTiO{sub 3} film grown on (La{sub 0.3}Sr{sub 0.7})(Al{sub 0.65}Ta{sub 0.35})O{sub 3} (001) (LSAT) substrate using the hybrid molecular beam epitaxy approach. No change in the film's lattice parameter (both the in-plane and the out-of-plane) was observed up to a film thickness of 180 nm, which is in sharp contrast to the theoretical critical thickness of ∼12 nm calculated using the equilibrium theory of strain relaxation. For film thicknesses greater than 180 nm, the out-of-plane lattice parameter was found to decrease hyperbolically in an excellent agreement with the relaxation via forming misfit dislocations. Possible mechanisms are discussed by which the elastic strain energy can be accommodated prior to forming misfit dislocations leading to such anomalously large critical thickness.

  5. Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3 films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Shuolong [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Sobota, Jonathan A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Leuenberger, Dominik [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Kemper, Alexander F. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Lee, James J. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Schmitt, Felix T. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Li, Wei [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Moore, Rob G. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Kirchmann, Patrick S. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Shen, Zhi -Xun [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)

    2015-06-01

    Ultrathin FeSe films grown on SrTiO3 substrates are a recent milestone in atomic material engineering due to their important role in understanding unconventional superconductivity in Fe-based materials. By using femtosecond time- and angle-resolved photoelectron spectroscopy, we study phonon frequencies in ultrathin FeSe/SrTiO3 films grown by molecular beam epitaxy. After optical excitation, we observe periodic modulations of the photoelectron spectrum as a function of pump–probe delay for 1-unit-cell, 3-unit-cell, and 60-unit-cell thick FeSe films. The frequencies of the coherent intensity oscillations increase from 5.00 ± 0.02 to 5.25 ± 0.02 THz with increasing film thickness. By comparing with previous works, we attribute this mode to the Se A1g phonon. The dominant mechanism for the phonon softening in 1-unit-cell thick FeSe films is a substrate-induced lattice strain. Results demonstrate an abrupt phonon renormalization due to a lattice mismatch between the ultrathin film and the substrate.

  6. Surface modified hydroxyapatite thick films for CO 2 gas sensing application: Effect of swift heavy ion irradiation

    Science.gov (United States)

    Mene, Ravindra U.; Mahabole, Megha P.; Khairnar, Rajendra S.

    2011-06-01

    Swift heavy ion irradiation (SHI) is used to modify the structural and gas sensing properties of Hydroxyapatite (HAp) thick films. The HAp thick films, prepared by screen printing technique, are irradiated with a variable fluence (3×10 10 to 3×10 13 ions/cm 2) of Ag 7+ ions of 100 MeV energy. XRD shows gradual change in crystallinity of the matrix with increase in ion fluence. Atomic force microscopy reveals the agglomeration of grains with pronounced cluster type structure at relatively higher ion fluence. For confirmation of efficient gas sensing of pristine and irradiated HAp thick films, repeatability and reproducibility tests are conducted in a carbon dioxide atmosphere. The parameters responsible for device applications such as, gas uptake capacity, response to test gas and recovery time of HAp film sensor are also investigated. SHI modified HAp films show the maximum enhancement in the gas response and also in increased gas uptake capacity for the fluence 3×10 11 ions/cm 2. Moreover, SHI has resulted in modification of gas response and recovery time for CO 2 gas. The remarkable observation is to note that SHI irradiation improves the sensor characteristics of the HAp films without affecting the working temperature (165 °C) of gas sensor.

  7. Surface modified hydroxyapatite thick films for CO{sub 2} gas sensing application: Effect of swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Mene, Ravindra U.; Mahabole, Megha P. [School of Physical Sciences, S.R.T.M. University, Nanded 431 606 (India); Khairnar, Rajendra S., E-mail: rskhairnarsps@gmail.co [School of Physical Sciences, S.R.T.M. University, Nanded 431 606 (India)

    2011-06-15

    Swift heavy ion irradiation (SHI) is used to modify the structural and gas sensing properties of Hydroxyapatite (HAp) thick films. The HAp thick films, prepared by screen printing technique, are irradiated with a variable fluence (3x10{sup 10} to 3x10{sup 13} ions/cm{sup 2}) of Ag{sup 7+} ions of 100 MeV energy. XRD shows gradual change in crystallinity of the matrix with increase in ion fluence. Atomic force microscopy reveals the agglomeration of grains with pronounced cluster type structure at relatively higher ion fluence. For confirmation of efficient gas sensing of pristine and irradiated HAp thick films, repeatability and reproducibility tests are conducted in a carbon dioxide atmosphere. The parameters responsible for device applications such as, gas uptake capacity, response to test gas and recovery time of HAp film sensor are also investigated. SHI modified HAp films show the maximum enhancement in the gas response and also in increased gas uptake capacity for the fluence 3x10{sup 11} ions/cm{sup 2}. Moreover, SHI has resulted in modification of gas response and recovery time for CO{sub 2} gas. The remarkable observation is to note that SHI irradiation improves the sensor characteristics of the HAp films without affecting the working temperature (165 {sup o}C) of gas sensor.

  8. Effects of thickness and sintering conditions of CdS films on the photovoltaic properties of CdS/CdTe solar cells

    Science.gov (United States)

    Jun, Y. K.; Im, H. B.

    1988-07-01

    Sintered CdS films with various thicknesses and electronic properties have been prepared by changing the coated thickness and sintering conditions. All-polycrystalline CdS/CdTe solar cells have been fabricated by coating a CdTe slurry on the sintered CdS films and sintering in an attempt to optimize the thickness and conditions of the CdS film, which is to be the window as well as the front contact for the CdS/CdTe solar cell. Optical transmission of the sintered CdS film shows a maximum value for 25-micron-thick films when the films are sintered at 650 C for 1 h in nitrogen, whereas the maximum optical transmission is observed in 15-micron-thick film when the films are sintered at 600 C. The highest optical transmission is observed in 12-micron-thick CdS film sintered at 560 C. Electrical resistivity of the sintered CdS films was less than 1 ohm cm. Solar efficiency of 11.2 percent was observed in an all-polycrystalline CdS/CdTe solar cell that was fabricated on the 12-micron-thick CdS film.

  9. Effects of thickness and sintering conditions of CdS films on the photovoltaic properties of CdS/CdTe solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jun, Y.K.; Im, H.B. (Dept. of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Cheongryang, Seoul (KR))

    1988-07-01

    Sintered CdS films with various thicknesses and electronic properties have been prepared by changing the coated thickness and sintering conditions. All-polycrystalline CdS/CdTe solar cells have been fabricated by coating a CdTe slurry on the sintered CdS films and sintering in an attempt to optimize the thickness and conditions of CdS film whose role is to be the window as well as the front contact for the CdS/CdTe solar cell. Optical transmission of the sintered CdS film shows a maximum value for 25 m thick films when the films were sintered at 650C for lh in nitrogen whereas the maximum optical transmission is observed in 15 thick film when the films were sintered at 600C. The highest optical transmission is observed in 12 m thick CdS film which was sintered at 560C. Electrical resistivity of the sintered CdS films was less than l -cm. Solar efficiency of 11.2% was observed in all-polycrystalline CdS/CdTe solar cell that was fabricated on the 12 m thick CdS film.

  10. Evaluation of an ultrasonic method for measurement of oil film thickness in a hydraulic motor piston ring

    OpenAIRE

    Harper, P; Dwyer-Joyce, R.S.; Sjodin, U.; Olofsson, U.

    2005-01-01

    The efficiency of a hydraulic motor depends on the lubrication performance of the piston ring. If the film is too thin then wear occurs quickly, if it is too thick then oil is lost into the cylinder and efficiency is reduced. In this paper a technique for oil film measurement based on ultrasonic reflection is investigated. This has the potential to be used non-invasively on real components. An ultrasonic pulse will reflect from a thin film interposed between two solids. The proportion of the ...

  11. MgB2 thick films deposited on stainless steel substrate with Tc higher than 39K

    Institute of Scientific and Technical Information of China (English)

    LI Fen; GUO Tao; ZHANG Kai-cheng; CHEN Chin-ping; FENG Qing-rong

    2006-01-01

    Thick MgB2 (magnesium diborate) films,~10 μm,with Tc (onset)=39.4 K and Tc (zero)=39.2 K have been successfully grown on a stainless steel substrate using a technique called hybrid physical-chemical deposition (HPCVD).The deposition rate is high,~6.7 nm/s.The X-ray diffraction (XRD) indicates that it is highly (101) and c-axis oriented.The scanning electron microscope (SEM) images demonstrate that the film grown is in"island-mode".The uniform superconducting phase in the film is shown by the M-T measurement.

  12. Temperature and layer thickness dependent in situ investigations on epindolidione organic thin-film transistors

    Science.gov (United States)

    Lassnig, R.; Striedinger, B.; Jones, A.O.F.; Scherwitzl, B.; Fian, A.; Głowacl, E.D.; Stadlober, B.; Winkler, A.

    2016-01-01

    We report on in situ performance evaluations as a function of layer thickness and substrate temperature for bottom-gate, bottom-gold contact epindolidione organic thin-film transistors on various gate dielectrics. Experiments were carried out under ultra-high vacuum conditions, enabling quasi-simultaneous electrical and surface analysis. Auger electron spectroscopy and thermal desorption spectroscopy (TDS) were applied to characterize the quality of the substrate surface and the thermal stability of the organic films. Ex situ atomic force microscopy (AFM) was used to gain additional information on the layer formation and surface morphology of the hydrogen-bonded organic pigment. The examined gate dielectrics included SiO2, in its untreated and sputtered forms, as well as the spin-coated organic capping layers poly(vinyl-cinnamate) (PVCi) and poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE, from the class of polynorbornenes). TDS and AFM revealed Volmer-Weber island growth dominated film formation with no evidence of a subjacent wetting layer. This growth mode is responsible for the comparably high coverage required for transistor behavior at 90–95% of a monolayer composed of standing molecules. Surface sputtering and an increased sample temperature during epindolidione deposition augmented the surface diffusion of adsorbing molecules and therefore led to a lower number of better-ordered islands. Consequently, while the onset of charge transport was delayed, higher saturation mobility was obtained. The highest, bottom-contact configuration, mobilities of approximately 2.5 × 10−3cm2/Vs were found for high coverages (50 nm) on sputtered samples. The coverage dependence of the mobility showed very different characteristics for the different gate dielectrics, while the change of the threshold voltage with coverage was approximately the same for all systems. An apparent decrease of the mobility with increasing coverage on the

  13. Monolithic Pellets, Composites and Thick Films of Hydroxyapatite: Correlation of Mechanical Properties with Microstructure.

    Science.gov (United States)

    Wang, Pauchiu Either

    Hydroxyapatite Ca_{10}(PO _4)_6(OH)_2 (abbreviated as HA) has great biocompatibility. Poor mechanical properties of HA implants and decomposition of HA during processing are the major obstacles for widespread uses of HA. In the present thesis we have attempted to understand the sintering behavior of monolithic HA and metal-reinforced HA-matrix composites, and the mechanism of formation of HA coating in the solutions at the normal temperature. The powders of two calcium phosphates, namely hydroxyapatite and dicalcium phosphate (DCP: chemical formula Ca_2P_2O_7), were sintered at various temperatures and in various environments. The density, flexural strength and knoop hardness of both phosphates sintered in air for 4 h initially increased with the sintering temperature, reaching maxima at around 1000-1150 ^circC, and then decreased due to decomposition. To reduce dehydroxylation, HA powder was sintered in moisture at various temperatures up to 1350^circ C and X-ray diffraction study did not indicate any decomposition at the highest sintering temperature. It is seen that dehydroxylation did not hinder sintering, but decomposition obstructed sintering of both HA and DCP. Ductile-phase reinforcement of hydroxyapatite was achieved by addition of silver particulates (5-30 vol.%) in HA powder compacts. A composite made by sintering 10 vol.% Ag and balance HA at 1200^circ C for 1 h in air had flexural strength of 75 +/- 7 MPa, which was almost double that of pure HA sintered under an identical condition. Silver in the composite melted during sintering, but due to poor wetting, did not spread in between HA particles. The increase in the flexural strength of the composites was thought to be due to crack-bridging and crack-arrest by silver inclusions. Thick films (several μm) of hydroxyapatite were deposited on silicon single crystal placed in close proximity to a plate of apatite- and wollastonite -containing glass and dipped into a simulated body fluid (SBF) at 36^circ

  14. Characterization of in-situ annealed sub-micron thick Cu(In,Ga)Se{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Byoung-Soo; Sung, Shi-Joon; Hwang, Dae-Kue, E-mail: dkhwang@dgist.ac.kr

    2015-09-01

    Sub-micron thick Cu(In,Ga)Se{sub 2} (CIGS) thin films were deposited on Mo-coated soda-lime glass substrates under various conditions by single-stage co-evaporation. Generally, the short circuit current (J{sub sc}) decreased with the decreasing thickness of the absorber layer. However, in this study, J{sub sc} was nearly unchanged with decreasing thickness, while the open circuit voltage (V{sub oc}) and fill factor (FF) decreased by 31.9 and 31.1%, respectively. We believe that the remarkable change of V{sub oc} and FF can be attributed to the difference in the total amount of injected thermal energy. Using scanning electron microscopy, we confirmed that the surface morphology becomes smooth and the grain size increased after the annealing process. In the X-ray diffraction patterns, the CIGS thin film also showed an improved crystal quality. We observed that the electric properties were improved by the in-situ annealing of CIGS thin films. The reverse saturation current density of the annealed CIGS solar cell was 100 times smaller than that of reference solar cell. Thus, sub-micron CIGS thin films annealed under a constant Se rate showed a 64.7% improvement in efficiency. - Highlights: • The effects of in-situ annealing the sub-micron CIGS film have been investigated. • The surface morphology and the grain size were improved by in-situ annealing. • The V{sub oc} and FF of the films were increased by about 30% after in-situ annealing. • In-situ annealing of sub-micron thick CIGS films can be improved an efficiency.

  15. Electrooxidation of carbon monoxide and methanol on platinum-overlayer-coated gold nanoparticles: effects of film thickness.

    Science.gov (United States)

    Kumar, Sachin; Zou, Shouzhong

    2007-06-19

    The electrooxidation of carbon monoxide and methanol on Pt-coated Au nanoparticles attached to 3-aminopropyl trimethoxysilane-modified indium tin oxide electrodes was examined as a function of Pt film thickness and Au particle coverage. For the electrodes with medium and high Au particle coverages, the CO stripping peak position shifts to more negative values with increasing Pt film thickness, from ca. 0.8 V (vs Ag/AgCl) at 1 ML to 0.45 V at 10 ML. Accompanying this peak potential shift is the sharpening of the peak width from more than 150 to 65 mV. For the electrode with low Au particle coverage, similar peak width narrowing was also observed, but the peak potential shift is much smaller, from 0.85 V at 1 ML of Pt to 0.65 V at 10 ML. These observations are compared with the CO oxidation on bulk Pt electrodes and on Pt films deposited on bulk Au electrodes. The film-thickness-dependent CO oxidation is explained by d band theory in terms of strain and ligand effects, the particle size effect, and the particle aggregation induced by Pt film growth. Corresponding to the increasing CO oxidation activity, the current density of methanol oxidation grows with the Pt film thickness. The peak potential and current density reach the same values as those obtained on a polycrystalline bulk Pt electrode when more than 4 ML of Pt is deposited on the Au particle electrodes with a particle coverage higher than 0.25. These results suggest that it is feasible to reduce Pt loading in methanol fuel cells by using Pt thin films as the anode catalyst. PMID:17521203

  16. Structure and electrical properties of Na0.5Bi0.5TiO3 ferroelectric thick films derived from a polymer modified sol-gel method.

    Science.gov (United States)

    Ji, Hongfen; Ren, Wei; Wang, Lingyan; Shi, Peng; Chen, Xiaofeng; Wu, Xiaoqing; Yao, Xi; Lau, Sien-Ting; Zhou, Qifa; Shung, K Kirk

    2011-10-01

    Lead-free NaBi(0.5)TiO(3) (NBT) ferroelectric thick films were prepared by a poly(vinylpyrrolidone) (PVP) modified sol-gel method. The NBT thick films annealed from 500°C to 750°C exhibit a perovskite structure. The relationship between annealing temperature, thickness, and electrical properties of the thick films has been investigated. The dielectric constants and remnant polarizations of the thick films increase with annealing temperature. The electrical properties of the NBT films show strong thickness dependence. As thickness increases from 1.0 to 4.8 μm, the dielectric constant of the NBT films increases from 620 to 848, whereas the dielectric loss is nearly independent of the thickness. The remnant polarization of the NBT thick films also increases with increasing thickness. The leakage current density first decreases and then increases with film thickness. PMID:21989868

  17. Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

    Science.gov (United States)

    Ahmadipour, Mohsen; Ain, Mohd Fadzil; Ahmad, Zainal Arifin

    2016-11-01

    In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV-vis spectrophotometer and current-voltage (I-V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30-90% relative humidity (RH).

  18. Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors

    Directory of Open Access Journals (Sweden)

    Ji Heon Kim

    2016-06-01

    Full Text Available We investigated the dependence of electron mobility on the thickness of MoS2 nanosheets by fabricating bottom-gate single and few-layer MoS2 thin-film transistors with SiO2 gate dielectrics and Au electrodes. All the fabricated MoS2 transistors showed on/off-current ratio of ∼107 and saturated output characteristics without high-k capping layers. As the MoS2 thickness increased from 1 to 6 layers, the field-effect mobility of the fabricated MoS2 transistors increased from ∼10 to ∼18 cm2V−1s−1. The increased subthreshold swing of the fabricated transistors with MoS2 thickness suggests that the increase of MoS2 mobility with thickness may be related to the dependence of the contact resistance and the dielectric constant of MoS2 layer on its thickness.

  19. Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors

    Science.gov (United States)

    Kim, Ji Heon; Kim, Tae Ho; Lee, Hyunjea; Park, Young Ran; Choi, Woong; Lee, Cheol Jin

    2016-06-01

    We investigated the dependence of electron mobility on the thickness of MoS2 nanosheets by fabricating bottom-gate single and few-layer MoS2 thin-film transistors with SiO2 gate dielectrics and Au electrodes. All the fabricated MoS2 transistors showed on/off-current ratio of ˜107 and saturated output characteristics without high-k capping layers. As the MoS2 thickness increased from 1 to 6 layers, the field-effect mobility of the fabricated MoS2 transistors increased from ˜10 to ˜18 cm2V-1s-1. The increased subthreshold swing of the fabricated transistors with MoS2 thickness suggests that the increase of MoS2 mobility with thickness may be related to the dependence of the contact resistance and the dielectric constant of MoS2 layer on its thickness.

  20. Reaction Time and Film Thickness Effects on Phase Formation and Optical Properties of Solution Processed Cu2ZnSnS4 Thin Films

    Science.gov (United States)

    Safdar, Amna; Islam, Mohammad; Akram, Muhammad Aftab; Mujahid, Mohammad; Khalid, Yasir; Shah, S. Ismat

    2016-02-01

    Copper-zinc-tin-sulfide (Cu2ZnSnS4 or CZTS) is a promising p-type semiconductor material as absorber layer in thin film solar cells. The sulfides of copper and tin as well as zinc and sulfur powders were dissolved in hydrazine. The effect of chemical reaction between precursor species, at room temperature, was assessed for 6 to 22 h. For 22 h reaction time, the effect of spin coated film thickness on the resulting composition, after annealing under N2 flow at 500 °C for 1 h, was investigated. The morphology, composition, and optical properties of the annealed films were determined by means of x-ray diffraction, scanning electron microscope, and spectrophotometer studies. It was found that, for less than optimal reaction time of 22 h or film thickness below 1.2 µm, other ternary phases namely Cu4SnS4, Cu5Sn2S7, and ZnS co-exist in different proportions besides CZTS. Formation of phase-pure CZTS films also exhibited a tendency to minimize film cracking during annealing. Depending on the processing conditions, the band gap ( E g) values were determined to be in the range of 1.55 to 1.97 eV. For phase-pure annealed CZTS film, an increase in the E g value may be attributed to quantum confinement effect due to small crystallite size.