WorldWideScience

Sample records for antiferroelectric thick films

  1. Antiferroelectric films of deuterated betaine phosphate

    Science.gov (United States)

    Balashova, E. V.; Krichevtsov, B. B.; Svinarev, F. B.; Zaitseva, N. V.

    2016-07-01

    Thin films of partially deuterated betaine phosphate have been grown by the evaporation on Al2O3(110) and NdGaO3(001) substrates with a preliminarily deposited structure of interdigitated electrodes. The grown films have a polycrystalline block structure with characteristic dimensions of blocks of the order of 0.1-1.5 mm. The degree of deuteration of the films D varies in the range of 20-50%. It has been found that, at the antiferroelectric phase transition temperature T c afe = 100-114 K, the fabricated structures exhibit an anomaly of the electrical capacitance C, which is not accompanied by a change in the dielectric loss tangent tanδ. The strong-signal dielectric response is characterized by the appearance of a ferroelectric nonlinearity at temperatures T > T c afe , which is transformed into an antiferroelectric nonlinearity at T < T c afe . With a further decrease in the temperature, double dielectric hysteresis loops appear in the antiferroelectric phase. The dielectric properties of the films have been described within the framework of the Landau-type thermodynamic model taking into account the biquadratic coupling ξ P 2η2 between the polar order parameter P and the nonpolar order parameter η with a positive coefficient ξ. The E-T phase diagram has been constructed.

  2. Energy-storage properties and electrocaloric effect of Pb(1-3x/2)LaxZr0.85Ti0.15O3 antiferroelectric thick films.

    Science.gov (United States)

    Zhao, Ye; Hao, Xihong; Zhang, Qi

    2014-07-23

    Antiferroelectric (AFE) thick (1 μm) films of Pb(1-3x/2)LaxZr0.85Ti0.15O3 (PLZT) with x = 0.08, 0.10, 0.12, and 0.14 were deposited on LaNiO3/Si (100) substrates by a sol-gel method. The dielectric properties, energy-storage performance, electrocaloric effect, and leakage current behavior were investigated in detail. With increasing La content, dielectric constant and saturated polarizations of the thick films were gradually decreased. A maximum recoverable energy-storage density of 38 J/cm(3) and efficiency of 71% were achieved in the thick films with x = 0.12 at room temperature. A large reversible adiabatic temperature change of ΔT = 25.0 °C was presented in the thick films with x = 0.08 at 127 °C at 990 kV/cm. Moreover, all the samples had a lower leakage current density below 10(-6) A/cm(2) at room temperature. These results indicated that the PLZT AFE thick films could be a potential candidate for applications in high energy-storage density capacitors and cooling devices.

  3. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.

    Science.gov (United States)

    Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Müller, Johannes; Kersch, Alfred; Schroeder, Uwe; Mikolajick, Thomas; Hwang, Cheol Seong

    2015-03-18

    The recent progress in ferroelectricity and antiferroelectricity in HfO2-based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3, BaTiO3, and SrBi2Ta2O9, which are considered to be feasible candidate materials for non-volatile semiconductor memory devices. However, these conventional ferroelectrics suffer from various problems including poor Si-compatibility, environmental issues related to Pb, large physical thickness, low resistance to hydrogen, and small bandgap. In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferro-electricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 μC cm(-2), and their coercive field (≈1-2 MV cm(-1)) is larger than conventional ferroelectric films by approximately one order of magnitude. Furthermore, they can be extremely thin (5 eV). These differences are believed to overcome the barriers of conventional ferroelectrics in memory applications, including ferroelectric field-effect-transistors and three-dimensional capacitors. Moreover, the coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors.

  4. Characteristics of antiferroelectric PbZrO sub 3 thin films

    CERN Document Server

    Kim, I W; Kim, K S; Kim, H K; Lee Jae Sik; Jeong, J H; Yamakawa, K

    1998-01-01

    Antiferroelectric PbZrO sub 3 thin films were synthesized on Pt/Ti/SiO sub 2 /Si substrates by using reactive magnetron co-sputtering followed by rapid thermal annealing. At an annealing temperature of 700.deg.C, the PbZrO sub 3 films exhibited a pure perovskite phase with improved crystallinity as evidenced by higher and sharper (221) and (240) X-ray diffractometer peaks. From the scanning electron microscopy observations, the grains were found to have a columnar structure, and the average grain size was 0.3 - 0.5 mu m. An electric-field-forced transformation from the antiferroelectric phase to the ferroelectric phase was observed at room temperature and had a maximum polarization value of 41 mu C/cm sup 2. The average fields for exciting the ferroelectric state and that for reversing to the antiferroelectric state, as measured by charge versus voltage curves, were 357 kV/cm and 207 kV/cm, respectively. The dielectric constant was 196 with an associated dissipation factor of 0.043 at 100kHz. The frequency-de...

  5. Thick film hydrogen sensor

    Science.gov (United States)

    Hoffheins, Barbara S.; Lauf, Robert J.

    1995-01-01

    A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

  6. Artificial Modulation of Ferroelectric Thin Films into Antiferroelectric through H+ Implantation for High-Density Charge Storage

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yan-Jun; FEI Jin-Wen; TANG Wing-Ao; JIANG An-Quan

    2008-01-01

    Hydrogen ions are implanted into Pb(Zr0.3Ti0.7)O3 thin films at the energy of 40keV with a flux of 5 ×1014 ions/cm2.Pseudo-antiferroelectric behaviour in the implanted thin films is observed,as confirmed by the measurements of polarization versus electric hysteresis loops and capacitance versus voltage curves.X-ray diffraction patterns show the film structures before and after H+ implantation both to be perovskite of a tetragonal symmetry.These findings indicate that hydrogen ions exist as stable dopants within the films.It is believed that the dopants change domain-switching behaviour via the boundary charge compensation.Meanwhile,time dependence of leakage current density after time longer than lOs indicates the enhancement of the leakage current nearly in one order for the implanted film,but the current at time shorter than I s is mostly the same as that of the original film without the ionic implantation.The artificial tailoring of the antiferroelectric behaviour through H+ implantation in ferroelectric thin films is finally proven to be achievable for the device application of high-density charge storage.

  7. Antiferroelectric Thin-Film Capacitors with High Energy-Storage Densities, Low Energy Losses, and Fast Discharge Times.

    Science.gov (United States)

    Ahn, Chang Won; Amarsanaa, Gantsooj; Won, Sung Sik; Chae, Song A; Lee, Dae Su; Kim, Ill Won

    2015-12-09

    We demonstrate a capacitor with high energy densities, low energy losses, fast discharge times, and high temperature stabilities, based on Pb(0.97)Y(0.02)[(Zr(0.6)Sn(0.4))(0.925)Ti(0.075)]O3 (PYZST) antiferroelectric thin-films. PYZST thin-films exhibited a high recoverable energy density of U(reco) = 21.0 J/cm(3) with a high energy-storage efficiency of η = 91.9% under an electric field of 1300 kV/cm, providing faster microsecond discharge times than those of commercial polypropylene capacitors. Moreover, PYZST thin-films exhibited high temperature stabilities with regard to their energy-storage properties over temperatures ranging from room temperature to 100 °C and also exhibited strong charge-discharge fatigue endurance up to 1 × 10(7) cycles.

  8. Leakage current characteristics and dielectric breakdown of antiferroelectric Pb0.92La0.08Zr0.95Ti0.05O3 film capacitors grown on metal foils

    Science.gov (United States)

    Ma, Beihai; Kwon, Do-Kyun; Narayanan, Manoj; Balachandran, U. Balu

    2008-10-01

    We have grown crack-free antiferroelectric (AFE) Pb0.92La0.08Zr0.95Ti0.05O3 (PLZT) films on nickel foils by chemical solution deposition. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, we applied a conductive buffer layer of lanthanum nickel oxide (LNO) on the nickel foil by chemical solution deposition prior to the PLZT deposition. Use of the LNO buffer allowed high-quality film-on-foil capacitors to be prepared at high temperatures in air. With the AFE PLZT deposited on LNO-buffered Ni foils, we observed field-induced phase transformations of AFE to ferroelectric (FE). The AFE-to-FE phase transition field, EAF = 260 kV cm-1, and the reverse phase transition field, EFA = 220 kV cm-1, were measured at room temperature on a ~1.15 µm thick PLZT film grown on LNO-buffered Ni foils. The relative permittivities of the AFE and FE states were ~530 and ~740, respectively, with dielectric loss <0.05 at room temperature. P-E hysteresis loop measured at room temperature confirmed the field-induced phase transition. The time-relaxation current density was investigated under various applied electric fields. The leakage current density of a 1.15 µm thick AFE PLZT film-on-foil capacitor was 5 × 10-9 A cm-2 at room temperature under 87 kV cm-1 applied field. The breakdown behaviour of the AFE PLZT film-on-foil capacitors was studied by Weibull analysis. The mean breakdown time decreased exponentially with increasing applied field. The mean breakdown time was over 610 s when a field of 1.26 MV cm-1 was applied to a 1.15 µm thick AFE PLZT film-on-foil capacitor.

  9. Micro-droplets lubrication film thickness dynamics

    Science.gov (United States)

    Huerre, Axel; Theodoly, Olivier; Cantat, Isabelle; Leshansky, Alexander; Valignat, Marie-Pierre; Jullien, Marie-Caroline; MMN Team; LAI Team; IPR Team; Department of Chemical Engineering Team

    2014-11-01

    The motion of droplets or bubbles in confined geometries has been extensively studied; showing an intrinsic relationship between the lubrication film thickness and the droplet velocity. When capillary forces dominate, the lubrication film thickness evolves non linearly with the capillary number due to viscous dissipation between meniscus and wall. However, this film may become thin enough that intermolecular forces come into play and affect classical scalings. We report here the first experimental evidence of the disjoining pressure effect on confined droplets by measuring droplet lubrication film thicknesses in a microfluidic Hele-Shaw cell. We find and characterize two distinct dynamical regimes, dominated respectively by capillary and intermolecular forces. In the former case rolling boundary conditions at the interface are evidenced through film thickness dynamics, interface velocity measurement and film thickness profile.

  10. Film thickness determination by grazing incidence diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Battiston, G. A.; Gerbasi, R. [CNR, Padua (Italy). Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati

    1996-09-01

    Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive.

  11. Effect of geometry on hydrodynamic film thickness

    Science.gov (United States)

    Brewe, D. E.; Hamrock, B. J.; Taylor, C. M.

    1978-01-01

    The influence of geometry on the isothermal hydrodynamic film separating two rigid solids was investigated. Pressure-viscosity effects were not considered. The minimum film thickness is derived for fully flooded conjunctions by using the Reynolds boundary conditions. It was found that the minimum film thickness had the same speed, viscosity, and load dependence as Kapitza's classical solution. However, the incorporation of Reynolds boundary conditions resulted in an additional geometry effect. Solutions using the parabolic film approximation are compared with those using the exact expression for the film in the analysis. Contour plots are shown that indicate in detail the pressure developed between the solids.

  12. Thickness-dependent electrocaloric effect in mixed-phase Pb0.87Ba0.1 La0.02(Zr0.6Sn0.33Ti0.07)O3 thin films.

    Science.gov (United States)

    Correia, T M; Zhang, Q

    2016-08-13

    Full-perovskite Pb0.87Ba0.1La0.02(Zr0.6Sn0.33Ti0.07)O3 (PBLZST) thin films were fabricated by a sol-gel method. These revealed both rhombohedral and tetragonal phases, as opposed to the full-tetragonal phase previously reported in ceramics. The fractions of tetragonal and rhombohedral phases are found to be strongly dependent on film thickness. The fraction of tetragonal grains increases with increasing film thickness, as the substrate constraint throughout the film decreases with film thickness. The maximum of the dielectric constant (εm) and the corresponding temperature (Tm) are thickness-dependent and dictated by the fraction of rhombohedral and tetragonal phase, with εm reaching a minimum at 400 nm and Tm shifting to higher temperature with increasing thickness. With the thickness increase, the breakdown field decreases, but field-induced antiferroelectric-ferroelectric (EAFE-FE) and ferroelectric-antiferroelectric (EFE-AFE) switch fields increase. The electrocaloric effect increases with increasing film thickness.This article is part of the themed issue 'Taking the temperature of phase transitions in cool materials'.

  13. Nano-Hydroxyapatite Thick Film Gas Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Khairnar, Rajendra S.; Mene, Ravindra U.; Munde, Shivaji G.; Mahabole, Megha P. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606 (India)

    2011-12-10

    In the present work pure and metal ions (Co and Fe) doped hydroxyapatite (HAp) thick films have been successfully utilized to improve the structural, morphological and gas sensing properties. Nanocrystalline HAp powder is synthesized by wet chemical precipitation route, and ion exchange process is employed for addition of Co and Fe ions in HAp matrix. Moreover, swift heavy ion irradiation (SHI) technique is used to modify the surface of pure and metal ion exchanged HAp with various ion fluence. The structural investigation of pure and metal ion exchanged HAp thick films are carried out using X-ray diffraction and the presence of functional group is observed by means FTIR spectroscopy. Furthermore, surface morphology is visualized by means of SEM and AFM analysis. CO gas sensing study is carried out for, pure and metal ions doped, HAp thick films with detail investigation on operating temperature, response/recovery time and gas uptake capacity. The surface modifications of sensor matrix by SHI enhance the gas response, response/recovery and gas uptake capacity. The significant observation is here to note that, addition of Co and Fe in HAp matrix and surface modification by SHI improves the sensing properties of HAp films drastically resulting in gas sensing at relatively lower temperatures.

  14. Percolation effect in thick film superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sali, R.; Harsanyi, G. [Technical Univ. of Budapest (Hungary)

    1994-12-31

    A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T{sub c} and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm{sup 2}. The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed.

  15. Properties of conductive thick-film inks

    Science.gov (United States)

    Holtze, R. F.

    1972-01-01

    Ten different conductive inks used in the fabrication of thick-film circuits were evaluated for their physical and handling properties. Viscosity, solid contents, and spectrographic analysis of the unfired inks were determined. Inks were screened on ceramic substrates and fired for varying times at specified temperatures. Selected substrates were given additional firings to simulate the heat exposure received if thick-film resistors were to be added to the same substrate. Data are presented covering the (1) printing characteristics, (2) solderability using Sn-63 and also a 4 percent silver solder, (3) leach resistance, (4) solder adhesion, and (5) wire bonding properties. Results obtained using different firing schedules were compared. A comparison was made between the various inks showing general results obtained for each ink. The changes in firing time or the application of a simulated resistor firing had little effect on the properties of most inks.

  16. Residual Stress Analysis in Thick Uranium Films

    Energy Technology Data Exchange (ETDEWEB)

    Hodge, A M; Foreman, R J; Gallegos, G F

    2004-12-06

    Residual stress analysis was performed on thick, 1.0 to 25 {micro}m, depleted Uranium (DU) films deposited on an Al substrate by magnetron sputtering. Two distinct characterization techniques were used to measure substrate curvature before and after deposition. Stress evaluation was performed using the Benabdi/Roche equation, which is based on beam theory of a bi-layer material. The residual stress evolution was studied as a function of coating thickness and applied negative bias voltage (0-300V). The stresses developed were always compressive; however, increasing the coating thickness and applying a bias voltage presented a trend towards more tensile stresses and thus an overall reduction of residual stresses.

  17. Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb0.8Ba0.2ZrO3 Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases.

    Science.gov (United States)

    Peng, Biaolin; Zhang, Qi; Li, Xing; Sun, Tieyu; Fan, Huiqing; Ke, Shanming; Ye, Mao; Wang, Yu; Lu, Wei; Niu, Hanben; Zeng, Xierong; Huang, Haitao

    2015-06-24

    A highly textured (111)-oriented Pb0.8Ba0.2ZrO3 (PBZ) relaxor thin film with the coexistence of antiferroelectric (AFE) and ferroelectric (FE) phases was prepared on a Pt/TiOx/SiO2/Si(100) substrate by using a sol-gel method. A large recoverable energy storage density of 40.18 J/cm(3) along with an efficiency of 64.1% was achieved at room temperature. Over a wide temperature range of 250 K (from room temperature to 523 K), the variation of the energy density is within 5%, indicating a high thermal stability. The high energy storage performance was endowed by a large dielectric breakdown strength, great relaxor dispersion, highly textured orientation, and the coexistence of FE and AFE phases. The PBZ thin film is believed to be an attractive material for applications in energy storage systems over a wide temperature range.

  18. Determination of thin film refractive index and thickness by means of film phase thickness

    Science.gov (United States)

    Nenkov, Milen; Pencheva, Tamara

    2008-06-01

    A new approach for determination of refractive index dispersion n(λ) (the real part of the complex refractive index) and thickness d of thin films of negligible absorption and weak dispersion is proposed. The calculation procedure is based on determination of the phase thickness of the film in the spectral region of measured transmittance data. All points of measured spectra are included in the calculations. Barium titanate thin films are investigated in the spectral region 0.38-0.78 μm and their n(λ) and d are calculated. The approach is validated using Swanepoel's method and it is found to be applicable for relatively thin films when measured transmittance spectra have one minimum and one maximum only.

  19. Thickness Dependence of Resistivity and Optical Reflectance of ITO Films

    Institute of Scientific and Technical Information of China (English)

    GAO Mei-Zhen; JOB R; XUE De-Sheng; FAHRNER W R

    2008-01-01

    @@ Indium-tin-oxide (ITO) films deposited on crystalline silicon wafer and Coming glass are prepared by directcurrent magnetron sputtering method at room temperature with various thicknesses. The thickness dependences of structure, resistance and optical reflectance of ITO films are characterized. The results show that when the film thickness is less than 4Ohm, the resistivity and optical reflectance of the ITO tilm changes remarkably with thickness. The optoelectrical properties trend to stabilize when the thickness is over 55 nm. The GXRD result implies that the ITO film begins to crystallize if only the thickness is large enough.

  20. Oriented Growth of PZT thick film embedded with PZT nanoparticles

    Institute of Scientific and Technical Information of China (English)

    DUAN Zhong-xia; YUAN Jie; ZHAO Quan-liang; LU Ran; CAO Mao-sheng

    2009-01-01

    This paper reports that dense and crack-free (100) oriented lead zirconate titanate (Pb(Zr0.52Ti0.48)O3,PZT) thick film embedded with PZT nanoparticles has been successfully fabricated on Pt/Cr/SiO2/Si substrate by using PT transition layer and PVP additive. The thick film possesses single-phase perovskite structure and perfectly (100) oriented. The (100) orientation degree of the PZT films strongly depended on annealing time and for the 4 μm-thick PZT film which was annealed at 700 ℃ for 5 min is the largest. The (100) orientation degree of the PZT thick film gradually strengthen along with the thickness of film decreasing. The 3 μm-thick PZT thick film which was annealed at 700 ℃ for 5 min has the strongest (100) orientation degree, which is 82. 3%.

  1. Antiferroelectric Shape Memory Ceramics

    Directory of Open Access Journals (Sweden)

    Kenji Uchino

    2016-05-01

    Full Text Available Antiferroelectrics (AFE can exhibit a “shape memory function controllable by electric field”, with huge isotropic volumetric expansion (0.26% associated with the AFE to Ferroelectric (FE phase transformation. Small inverse electric field application can realize the original AFE phase. The response speed is quick (2.5 ms. In the Pb0.99Nb0.02[(Zr0.6Sn0.41-yTiy]0.98O3 (PNZST system, the shape memory function is observed in the intermediate range between high temperature AFE and low temperature FE, or low Ti-concentration AFE and high Ti-concentration FE in the composition. In the AFE multilayer actuators (MLAs, the crack is initiated in the center of a pair of internal electrodes under cyclic electric field, rather than the edge area of the internal electrodes in normal piezoelectric MLAs. The two-sublattice polarization coupling model is proposed to explain: (1 isotropic volume expansion during the AFE-FE transformation; and (2 piezoelectric anisotropy. We introduce latching relays and mechanical clampers as possible unique applications of shape memory ceramics.

  2. Thick film traps with an irregular film. Preparation and evaluation.

    Science.gov (United States)

    Kloskowski, Adam; Pettersson, Johan; Roeraade, Johan

    2004-05-07

    A new method for preparation of sorbent-based ultra-thick film traps for concentration of trace volatile components from gaseous matrices is described. The procedure is based on blowing a prepolymer (polydimethylsiloxane) through a capillary tube, forming an irregular film of stationary phase. Subsequently, the prepolymer is immobilized in a few seconds by heating to 200 degrees C. Evaluation of the performance of the new traps showed that the loss of efficiency, compared to regular smooth film traps is only on the order of 20-30%. In terms of breakthrough volume, this loss in performance is rather insignificant. The technology is extremely simple and allows a rapid and cheap production of a large number of ultra-thick film traps, even in non-specialized laboratories. The method can be applied to any type of cross-linkable stationary phase, thereby expanding the scope of sorbent-based trapping and preconcentration concept. Many applications are anticipated in trace and ultra-trace analysis in a wide range of fields, such as environmental chemistry, polymers, food and process analysis.

  3. Measurement Method of the Thickness Uniformity for Polymer Films

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Several methods for investigating the thickness uniformity of polymer thin films are presented as well as their measurement principles. A comparison of these experimental methods is given.The cylindrical lightwave reflection method is found to can obtain the thickness distribution along a certain direction.It is a simple and suitable method to evaluate the film thickness uniformity.

  4. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  5. Triaxial MEMS accelerometer with screen printed PZT thick film

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Almind, Ninia Sejersen; Brodersen, Simon Hedegaard;

    2010-01-01

    Piezoelectric thick films have increasing interest due to the potential high sensitivity and actuation force for MEMS sensors and actuators. The screen printing technique is a promising deposition technique for realizing piezoelectric thick films in the thickness range from 10-100 mu m. In this w......Piezoelectric thick films have increasing interest due to the potential high sensitivity and actuation force for MEMS sensors and actuators. The screen printing technique is a promising deposition technique for realizing piezoelectric thick films in the thickness range from 10-100 mu m....... In this work integration of a screen printed piezoelectric PZT thick film with silicon MEMS technology is shown. A high bandwidth triaxial accelerometer has been designed, fabricated and characterized. The voltage sensitivity is 0.31 mV/g in the vertical direction, 0.062 mV/g in the horizontal direction...

  6. Integrated thick-film nanostructures based on spinel ceramics.

    Science.gov (United States)

    Klym, Halyna; Hadzaman, Ivan; Shpotyuk, Oleh; Brunner, Michael

    2014-03-26

    Integrated temperature-humidity-sensitive thick-film structures based on spinel-type semiconducting ceramics of different chemical compositions and magnesium aluminate ceramics were prepared and studied. It is shown that temperature-sensitive thick-film structures possess good electrophysical characteristics in the region from 298 to 358 K. The change of electrical resistance in integrated thick-film structures is 1 order, but these elements are stable in time and can be successfully used for sensor applications.

  7. Integrated thick-film nanostructures based on spinel ceramics

    OpenAIRE

    Klym, Halyna; Hadzaman, Ivan; Shpotyuk, Oleh; Brunner, Michael

    2014-01-01

    Integrated temperature-humidity-sensitive thick-film structures based on spinel-type semiconducting ceramics of different chemical compositions and magnesium aluminate ceramics were prepared and studied. It is shown that temperature-sensitive thick-film structures possess good electrophysical characteristics in the region from 298 to 358 K. The change of electrical resistance in integrated thick-film structures is 1 order, but these elements are stable in time and can be successfully used for...

  8. Performance Comparison of Thin and Thick Film Microstrip Rejection Filters

    OpenAIRE

    Mandhare, M. M.; S.A. Gangal; M. S. Setty; Karekar, R. N.

    1988-01-01

    A performance comparison of microstripline circuits using thin and thick film techniques has been studied, in which a Microstrip rejection filter, in the X-band of microwaves, is used as test circuit. A thick film technique is capable of giving good adhesive films with comparable d.c. sheet resistivity, but other parameters such as open area (porosity), particle size, and edge definition are inferior to thin-film microstrip filters. Despite this drawback, the average value of transmission, tr...

  9. Use of buffy coat thick films in detecting malaria parasites in patients with negative conventional thick films

    Institute of Scientific and Technical Information of China (English)

    Chatnapa Duangdee; Noppadon Tangpukdee; Srivicha Krudsood; Polrat Wilairatana

    2012-01-01

    Objective: To determine the frequency of malaria parasite detection from the buffy coat blood ilms by using capillary tube in falciparum malaria patients with negative conventional thick ilms. Methods: Thirty six uncomplicated falciparum malaria patients confirmed by conventional thick and thin films were included in the study. The patients were treated with artemisinin combination therapy at Hospital for Tropical Diseases, Bangkok, Thailand for 28 day. Fingerpricks for conventional blood films were conducted every 6 hours until negative parasitemia, then daily fingerpricks for parasite checks were conducted until the patients were discharged from hospital. Blood samples were also concurrently collected in 3 heparinized capillary tubes at the same time of fingerpricks for conventional blood films when the prior parasitemia was negative on thin films and parasitemia was lower than 50 parasites/200 white blood cells by thick film. The first negative conventional thick films were compared with buffy coat thick films for parasite identification.Results:Out of 36 patients with thick films showing negative for asexual forms of parasites, buffy coat films could detect remaining 10 patients (27.8%) with asexual forms of Plasmodium falciparum. Conclusions: The study shows that buffy coat thick films are useful and can detect malarial parasites in 27.8% of patients whose conventional thick films show negative parasitemia.

  10. Influence of thickness on properties of plasticized oat starch films

    Directory of Open Access Journals (Sweden)

    Melicia Cintia Galdeano

    2013-08-01

    Full Text Available The aim of this study was to investigate the effect of thickness (between 80 and 120 µm on apparent opacity, water vapor permeability and mechanical properties (tensile and puncture of oat starch films plasticized with glycerol, sorbitol, glycerol:sorbitol mixture, urea and sucrose. Films were stored under 11, 57, 76 and 90% relative humidity (RH to study the mechanical properties. It was observed that the higher the thickness, the higher was the opacity values. Films without the plasticizer were more opaque in comparison with the plasticized ones. Glycerol:sorbitol films presented increased elongation with increasing thickness at all RH. Puncture force showed a strong dependence on the film thickness, except for the films plasticized with sucrose. In general, thickness did not affect the water permeability.

  11. Thickness dependence of vortex critical velocity in wide Nb films

    Energy Technology Data Exchange (ETDEWEB)

    Grimaldi, Gaia [CNR-INFM Regional Laboratory SuperMat, Via S. Allende, Baronissi, SA, I-84081 (Italy)], E-mail: grimaldi@sa.infn.it; Leo, Antonio; Nigro, Angela; Pace, Sandro; Cirillo, Carla; Attanasio, Carmine [CNR-INFM Regional Laboratory SuperMat, Via S. Allende, Baronissi, SA, I-84081 (Italy); Dipartimento di Fisica ' E.R. Caianiello' , Universita di Salerno, Via S. Allende, Baronissi, SA, I-84081 (Italy)

    2008-04-01

    Pulsed I-V measurements performed on wide Nb films of different thickness show the electronic instability, at high driving currents, predicted by Larkin and Ovchinnikov (LO). We find that the associated vortex critical velocity v* decreases with the film thickness, and its temperature and magnetic field dependences exhibit some discrepancies with respect to the LO theoretical results.

  12. Alginate-magnesium aluminum silicate composite films: effect of film thickness on physical characteristics and permeability.

    Science.gov (United States)

    Pongjanyakul, Thaned; Puttipipatkhachorn, Satit

    2008-01-04

    The different film thicknesses of the sodium alginate-magnesium aluminum silicate (SA-MAS) microcomposite films were prepared by varying volumes of the composite dispersion for casting. Effect of film thickness on thermal behavior, solid-state crystallinity, mechanical properties, water uptake and erosion, and water vapor and drug permeability of the microcomposite films were investigated. The film thickness caused a small change in thermal behavior of the films when tested using DSC and TGA. The crystallinity of the thin films seemed to increase when compared with the thick films. The thin films gave higher tensile strength than the thick films, whereas % elongation of the films was on the contrary resulted in the lower Young's modulus of the films when the film thickness was increased. This was due to the weaker of the film bulk, suggesting that the microscopic matrix structure of the thick films was looser than that of the thin films. Consequently, water uptake and erosion, water vapor permeation and drug diffusion coefficient of the thick films were higher than those of the thin films. The different types of drug on permeability of the films also showed that a positive charge and large molecule of drug, propranolol HCl, had higher lag time and lower diffusion coefficient that acetaminophen, a non-electrolyte and small molecule. This was because of a higher affinity of positive charge drug on MAS in the films. The findings suggest that the evaporation rate of solvent in different volumes of the composite dispersion used in the preparation method could affect crystallinity and strength of the film surface and film bulk of the microcomposite films. This led to a change in water vapor and drug permeability of the films.

  13. Film-thickness Error Analysis of Optical Disk Systems

    Institute of Scientific and Technical Information of China (English)

    WANG Yang; GU Donghong; GAN Fuxi

    2001-01-01

    It is difficult to exactly control the film thickness of optical disk multilayer in the actual coating process. The thickness error becomes a main factor affecting the optical characters of the film system. The thickness error′s sensitivity factor of dielectric optical multilayer is derived from the optical matrix in this paper. The effect of the thickness error on the reflectivity or reflectivity contrast of the optical disk multilayer is analyzed with a numerical calculation. The sensitivities to thickness error for different layers or in different film-thickness ranges are compared and discussed. A sketchy method defining allowable thickness error is given. Some experimental results verify the applicability of our theoretical analysis.

  14. Advantages of PZT thick film for MEMS sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Lou-Moller, R.; Hansen, K.;

    2010-01-01

    For all MEMS devices a high coupling between the mechanical and electrical domain is desired. Figures of merit describing the coupling are important for comparing different piezoelectric materials. The existing figures of merit are discussed and a new figure of merit is introduced for a fair...... comparison of piezoelectric thin and thick films based MEMS devices, as cantilevers, beams, bridges and membranes. Simple analytical modeling is used to define the new figure of merit. The relevant figure of merits is compared for the piezoelectric material of interest for MEMS applications: ZnO, AIN, PZT...... thin film and PZT thick film. It is shown that MEMS sensors with the PZT thick film TF2100 from InSensor A/S have potential for significant higher voltage sensitivities compared to PZT thin film base MEMS sensors when the total thickness of the MEMS cantilever, beam, bridge or membrane is high...

  15. Barium titanate thick films prepared by screen printing technique

    Directory of Open Access Journals (Sweden)

    Mirjana M. Vijatović

    2010-06-01

    Full Text Available The barium titanate (BaTiO3 thick films were prepared by screen printing technique using powders obtained by soft chemical route, modified Pechini process. Three different barium titanate powders were prepared: i pure, ii doped with lanthanum and iii doped with antimony. Pastes for screen printing were prepared using previously obtained powders. The thick films were deposited onto Al2O3 substrates and fired at 850°C together with electrode material (silver/palladium in the moving belt furnace in the air atmosphere. Measurements of thickness and roughness of barium titanate thick films were performed. The electrical properties of thick films such as dielectric constant, dielectric losses, Curie temperature, hysteresis loop were reported. The influence of different factors on electrical properties values was analyzed.

  16. Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films.

    Science.gov (United States)

    Krishna, H; Sachan, R; Strader, J; Favazza, C; Khenner, M; Kalyanaraman, R

    2010-04-16

    We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO2 under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO2. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

  17. Self-assembled film thickness determination by focused ion beam

    Energy Technology Data Exchange (ETDEWEB)

    Dejeu, J. [Institut UTINAM, UMR 6213 CNRS-UFC - equipe Materiaux et Surfaces Structures, Universite de Franche-Comte, UFR Sciences et Techniques, 16 route de Gray - 25030 Besancon Cedex (France)], E-mail: jerome.dejeu@univ-fcomte.fr; Salut, R. [Institut FEMTO-ST, UMR 6174 CNRS-UFC-UTBM-ENSMM, Centrale MIMENTO, Universite de Franche-Comte, 32 avenue de l' Observatoire - 25044 Besancon Cedex (France); Spajer, M. [Institut FEMTO-ST, UMR 6174 CNRS-UFC-UTBM-ENSMM, Centrale MIMENTO, Universite de Franche-Comte, 32 avenue de l' Observatoire - 25044 Besancon Cedex (France); Institut FEMTO-ST, UMR 6174 CNRS-UFC-UTBM-ENSMM, Departement d' Optique, Universite de Franche-Comte, UFR Sciences et Techniques, 16 route de Gray - 25030 Besancon Cedex (France); Membrey, F.; Foissy, A. [Institut UTINAM, UMR 6213 CNRS-UFC - equipe Materiaux et Surfaces Structures, Universite de Franche-Comte, UFR Sciences et Techniques, 16 route de Gray - 25030 Besancon Cedex (France); Charraut, D. [Institut FEMTO-ST, UMR 6174 CNRS-UFC-UTBM-ENSMM, Departement d' Optique, Universite de Franche-Comte, UFR Sciences et Techniques, 16 route de Gray - 25030 Besancon Cedex (France)

    2008-06-30

    The thickness evolution of multilayer film is investigated by focused ion beam (FIB) in the domain of polymer multilayers. This method, currently used in the modification and the characterization of integrated circuits, proves it is possible to determine the polymer film thickness. Sample cutting and its observation of the cross-section are performed in the FIB without leaving the vacuum chamber. Two main conclusions can be drawn: (1) the roughness of the film increases with the number of layer deposit, (2) the film growth changes from nonlinear (called exponential) to linear beyond 300 nm (70 layers)

  18. Liquid film thickness measurement by two-line TDLAS

    Science.gov (United States)

    Yang, Huinan; Chen, Jun; Cai, Xiaoshu; Greszik, Daniel; Dreier, Thomas; Schulz, Christof

    2014-04-01

    A fiber-based two-line tunable diode-laser absorption sensor with two near-infrared (NIR) distributed-feedback (DFB) diode lasers at ˜1.4 μm was used for non-intrusive time-resolved liquid water film thickness measurement. When probing the liquid film at two different wavelengths with significantly different absorption cross-sections, the additional signal losses due to surface fowling, reflection and beam steering can be eliminated. In this work, the evaporation process of a liquid film on transparent quartz plate was tracked and large fluctuations of film thickness were found at the end of the evaporation.

  19. Refractive index of nanoscale thickness films measured by Brewster refractometry

    CERN Document Server

    Tikhonov, E A; Malyukin, Yu V

    2015-01-01

    It is shown that reflective laser refractometery at Brewster angle can be usefull for precision measurements of refractive indexes (RI) in the transparency band of various films of nanoscale thickness. The RI measurements of nanoscale porous film on the basis of gadolinium orthosilicate and quartz have been carried out as first experience. It is shown that surface light scattering in such films that is connected with clustering of nanoscale pores can decrease the accuracy of the RI measurements at Brewster angle. Estimated physical dependence RI stipulated by the film thickness reduction (3D-2D transition) in the range of (20-160)nm has not been not detected.

  20. Development of solid state thick film zirconia oxygen gas sensors.

    OpenAIRE

    Ioannou, Andreas Stylianou

    1992-01-01

    Aspects relating to and including the development of thick film amperometric zirconia oxygen sensors were investigated. These devices, which were operated in the range 550-950°C, had a laminated structure in which a cathode, an electrolyte and an anode were printed, in that order, onto a planar alumina substrate. The anode and electrolyte were porous and during sensor Operation also acted as a diffusion barrier, restricting the rate of oxygen diffusion to the cathode. A thick film platinum he...

  1. Electrophoretic deposition and constrained sintering of strontium titanate thick films

    Energy Technology Data Exchange (ETDEWEB)

    Amaral, Luís; Vilarinho, Paula M., E-mail: paula.vilarinho@ua.pt; Senos, Ana M.R.

    2015-01-15

    Thick films of functional oxides are currently substituting counterparts bulk ceramics, as in the case of low loss dielectrics. For SrTiO{sub 3} (ST) based compositions it is demonstrated that electrophoretic deposition (EPD), using acetone as a suspension media with iodine addition, is a suitable technology to fabricate 12 μm thick films. The microstructural analysis of the films sintered at 1500 °C shows that highly densified microstructures can be obtained and, by slightly varying the Sr/Ti stoichiometry in the powder composition, increased densification and grain size and enlargement of the distribution with decreasing Sr/Ti ratio can be observed. In spite of the high densification of the films, it is also demonstrated that due to the constraint imposed by the substrate a smaller grain size is observed in thick films as compared to equivalent bulk ceramics. In addition, a preferential vertical pore orientation is observed in ST thick films. These results may have broad implications if one considers that the dielectric losses and dielectric tunability is affected by pore orientation, since it affects the electric field distribution. - Highlights: • Nonstoichiometry effect on microstructure of constrained sintered thick films and bulk is similar. • Increased densification and grain size and enlargement of distribution with decreasing Sr/Ti ratio. • Independent of Sr/Ti ratio smaller grain size for thick films compared to ceramics. • Preferential vertical pore orientation for constrained sintering of thick films. • Anisotropic porosity as tailoring factor to engineer permittivity and tunability.

  2. Sputtering of Thick Deuterium Films by KeV Electrons

    DEFF Research Database (Denmark)

    Thestrup Nielsen, Birgitte; Svendsen, Winnie Edith; Schou, Jørgen;

    1994-01-01

    Sputtering of thick films of solid deuterium up to several μm by keV electrons is reported for the first time. The sputtering yield increases within a narrow range of thicknesses around 1.6 μm by about 2 orders of magnitude for 1.5 keV electrons. A similar behavior has not been observed for ion...

  3. Thickness of residual wetting film in liquid-liquid displacement

    Science.gov (United States)

    Beresnev, Igor; Gaul, William; Vigil, R. Dennis

    2011-08-01

    Core-annular flow is common in nature, representing, for example, how streams of oil, surrounded by water, move in petroleum reservoirs. Oil, typically a nonwetting fluid, tends to occupy the middle (core) part of a channel, while water forms a surrounding wall-wetting film. What is the thickness of the wetting film? A classic theory has been in existence for nearly 50 years offering a solution, although in a controversial manner, for moving gas bubbles. On the other hand, an acceptable, experimentally verified theory for a body of one liquid flowing in another has not been available. Here we develop a hydrodynamic, testable theory providing an explicit relationship between the thickness of the wetting film and fluid properties for a blob of one fluid moving in another, with neither phase being gas. In its relationship to the capillary number Ca, the thickness of the film is predicted to be proportional to Ca2 at lower Ca and to level off at a constant value of ˜20% the channel radius at higher Ca. The thickness of the film is deduced to be approximately unaffected by the viscosity ratio of the fluids. We have conducted our own laboratory experiments and compiled experimental data from other studies, all of which are mutually consistent and confirm the salient features of the theory. At the same time, the classic law, originally deduced for films surrounding moving gas bubbles but often believed to hold for liquids as well, fails to explain the observations.

  4. Determination of hydration film thickness using atomic force microscopy

    Institute of Scientific and Technical Information of China (English)

    PENG Changsheng; SONG Shaoxian; GU Qingbao

    2005-01-01

    Dispersion of a solid particle in water may lead to the formation of hydration film on the particle surface, which can strongly increase the repulsive force between the particles and thus strongly affect the stability of dispersions. The hydration film thickness, which varies with the variation of property of suspension particles, is one of the most important parameters of hydration film, and is also one of the most difficult parameters that can be measured accurately. In this paper, a method, based on force-distance curve of atomic force microscopy, for determining the hydration film thickness of particles is developed. The method utilizes the difference of cantilever deflection before, between and after penetrating the hydration films between tip and sample, which reflect the difference of slope on the force-distance curve. 3 samples, mica, glass and stainless steel, were used for hydration thickness determination, and the results show that the hydration film thickness between silicon tip and mica, glass and stainless steel are 30.0(2.0, 29.0(1.0 and 32.5(2.5 nm, respectively.

  5. Changes in the temperature-dependent specific volume of supported polystyrene films with film thickness

    Science.gov (United States)

    Huang, Xinru; Roth, Connie B.

    2016-06-01

    Recent studies have measured or predicted thickness-dependent shifts in density or specific volume of polymer films as a possible means of understanding changes in the glass transition temperature Tg(h) with decreasing film thickness with some experimental works claiming unrealistically large (25%-30%) increases in film density with decreasing thickness. Here we use ellipsometry to measure the temperature-dependent index of refraction of polystyrene (PS) films supported on silicon and investigate the validity of the commonly used Lorentz-Lorenz equation for inferring changes in density or specific volume from very thin films. We find that the density (specific volume) of these supported PS films does not vary by more than ±0.4% of the bulk value for film thicknesses above 30 nm, and that the small variations we do observe are uncorrelated with any free volume explanation for the Tg(h) decrease exhibited by these films. We conclude that the derivation of the Lorentz-Lorenz equation becomes invalid for very thin films as the film thickness approaches ˜20 nm, and that reports of large density changes greater than ±1% of bulk for films thinner than this likely suffer from breakdown in the validity of this equation or in the difficulties associated with accurately measuring the index of refraction of such thin films. For larger film thicknesses, we do observed small variations in the effective specific volume of the films of 0.4 ± 0.2%, outside of our experimental error. These shifts occur simultaneously in both the liquid and glassy regimes uniformly together starting at film thicknesses less than ˜120 nm but appear to be uncorrelated with Tg(h) decreases; possible causes for these variations are discussed.

  6. Thick-film materials for silicon photovoltaic cell manufacture

    Science.gov (United States)

    Field, M. B.

    1977-01-01

    Thick film technology is applicable to three areas of silicon solar cell fabrication; metallization, junction formation, and coating for protection of screened ohmic contacts, particularly wrap around contacts, interconnection and environmental protection. Both material and process parameters were investigated. Printed ohmic contacts on n- and p-type silicon are very sensitive to the processing parameters of firing time, temperature, and atmosphere. Wrap around contacts are easily achieved by first printing and firing a dielectric over the edge and subsequently applying a low firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and cofiring thick film metal pastes, soldering, or with heat curing conductive epoxies on low cost substrates. Printed (thick) film vitreous protection coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. A sprayed, heat curable SiO2 based resin shows promise of providing both optical matching and environmental protection.

  7. MEMS-based thick film PZT vibrational energy harvester

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Thyssen, Anders

    2011-01-01

    We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using...... a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz....

  8. Electroplated thick-film cobalt platinum permanent magnets

    Science.gov (United States)

    Oniku, Ololade D.; Qi, Bin; Arnold, David P.

    2016-10-01

    The material and magnetic properties of multi-micron-thick (up to 6 μm) L10 CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25-200 mA/cm2), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L10 ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (Br ~0.8 T, Hci ~800 kA/m, squareness close to 0.9, and BHmax of 100 kJ/m3) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm2, pH of 7, and subsequently annealed at 675 °C for 30 min.

  9. Grain size and film thickness effect on the thermal expansion coefficient of FCC metallic thin films.

    Science.gov (United States)

    Hwang, Seulgi; Kim, Youngman

    2011-08-01

    Thin films are used in wide range of applications in industry, such as solar cells and LEDs. When thin films are deposited on substrates, various stresses are generated due to the mechanical difference between the film and substrate. These stresses can cause defects, such as cracking and buckling. Therefore, knowledge of the mechanical properties is important for improving their reliability and stability. In this study, the thermal expansion coefficient of FCC metallic thin films, such as Ag and Cu, which have different grain sizes and thicknesses, were calculated using the thermal cycling method. As a result, thermal expansion coefficient increased with increasing grain size. However, the film thickness had no remarkable effect.

  10. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

    Science.gov (United States)

    Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

    2011-10-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  11. The thickness dependence of dielectric permittivity in thin films

    Science.gov (United States)

    Starkov, Ivan A.; Starkov, Alexander S.

    2016-08-01

    It is well known that the physical properties of thin films depend on their thickness. For a description of such dependences, it is proposed to use a classical model taking into account the presence of film interfaces. A dielectric ball near the half-space was chosen to adopt the approach. The dependence of the effective permittivity of the ball on geometrical and physical parameters of the system is analyzed. It is demonstrated that the dielectric constant of a film can be presented as a sum of the constant of a bulk material and the interface term.

  12. Screen printed thick film based pMUT arrays

    DEFF Research Database (Denmark)

    Hedegaard, Tobias; Pedersen, T; Thomsen, Erik Vilain;

    2008-01-01

    This article reports on the fabrication and characterization of lambda-pitched piezoelectric micromachined ultrasound transducer (pMUT) arrays fabricated using a unique process combining conventional silicon technology and low cost screen printing of thick film PZT. The pMUTs are designed as 8...

  13. Screen-printed piezoceramic thick films for miniaturised devices

    DEFF Research Database (Denmark)

    Lou-Moeller, R.; Hindrichsen, Christian Carstensen; Thamdrup, Lasse Højlund;

    2007-01-01

    The development towards smaller devices with more functions integrated calls for new and improved manufacturing processes. The screen-printing process is quite well suited for miniaturised and integrated devices, since thick films can be produced in this manner without the need for further machin...

  14. Shearing Nanometer-Thick Confined Hydrocarbon Films: Friction and Adhesion

    DEFF Research Database (Denmark)

    Sivebæk, I. M.; Persson, B. N. J.

    2016-01-01

    We present molecular dynamics (MD) friction and adhesion calculations for nanometer-thick confined hydrocarbon films with molecular lengths 20, 100 and 1400 carbon atoms. We study the dependency of the frictional shear stress on the confining pressure and sliding speed. We present results...

  15. MEMS Accelerometer with Screen Printed Piezoelectric Thick Film

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Lau-Moeller, R.; Bove, T.;

    2006-01-01

    A bulk-micromachined piezoelectric MEMS accelerometer with screen printed piezoelectric Pb(ZrxTil )O3(PZT) thick film (TF) as the sensing material has been fabricated and characterized. The accelerometer has a four beam structure with a central seismic mass (3600x3600x500 pm3) and a total chip size...

  16. Polymer thick-film sensors: possibilities for smartcard biometrics

    NARCIS (Netherlands)

    Henderson, N.J.; Papakostas, T.V.; White, N.M.; Hartel, P.H.

    2002-01-01

    In this paper the potential of polymer thick-film sensors are assessed for use as biometric sensors on smartcards. Piezoelectric and piezoresistive sensors have been printed on flexible polyester, then bonded to smartcard blanks. The tactile interaction of a person with these sensors has been invest

  17. Presentation and characterization of novel thick-film PZT microactuators

    Energy Technology Data Exchange (ETDEWEB)

    Chalvet, Vincent; Habineza, Didace, E-mail: didace.habineza@femto-st.fr; Rakotondrabe, Micky; Clévy, Cédric

    2016-04-01

    We propose in this paper the characterization of a new generation of piezoelectric cantilevers called thick-films piezoelectric actuators. Based on the bonding and thinning process of a bulk PZT layer onto a silicon layer, these cantilevers can provide better static and dynamic performances compared to traditional piezocantilevers, additionally to the small dimensions.

  18. Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

    KAUST Repository

    Oba, Tatsuya

    2012-06-19

    We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films. The axial position of the dye molecules across the thickness of the film was determined with a resolution of 12 nm by analyzing astigmatic fluorescence images. The average relaxation times of the rotating molecules do not depend on the overall thickness of the film between 20 and 110 nm. The relaxation times also do not show any dependence on the axial position within the films for the film thickness between 70 and 110 nm. In addition to the rotating molecules we observed a fraction of spatially diffusing molecules and completely immobile molecules. These molecules indicate the presence of thin (<5 nm) high-mobility surface layer and low-mobility layer at the interface with the substrate. (Figure presented) © 2012 American Chemical Society.

  19. Influence of substrate and film thickness on polymer LIPSS formation

    Science.gov (United States)

    Cui, Jing; Nogales, Aurora; Ezquerra, Tiberio A.; Rebollar, Esther

    2017-02-01

    Here we focus on the influence of both, substrate and film thickness on polymer Laser Induced Periodic Surface Structures (LIPSS) formation in polymer films. For this aim a morphological description of ripples structures generated on spin-coated polystyrene (PS) films by a linearly polarized laser beam with a wavelength of 266 nm is presented. The influence of different parameters on the quality and characteristics of the formed laser-induced periodic surface structures (LIPSS) was investigated. We found that well-ordered LIPSS are formed either on PS films thinner than 200 nm or thicker than 400 nm supported on silicon substrates as well as on thicker free standing films. However less-ordered ripples are formed on silicon supported films with intermediate thicknesses in the range of 200-380 nm. The effect of the thermal and optical properties of the substrate on the quality of LIPSS was analyzed. Differences observed in the fluence and number of pulses needed for the onset of surface morphological modifications is explained considering two main effects which are: (1) The temperature increase on polymer surface induced by the action of cumulative laser irradiation and (2) The differences in thermal conductivity between the polymer and the substrate which strongly affect the heat dissipation generated by irradiation.

  20. Effect of Film Thickness on Properties of a-Si∶H Films

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The a-Si∶H films with different thickness smaller than 1μm were deposited by plasma enhanced chemical vapor deposition (PECVD) under the optimum deposition conditions. The effect of different thickness on film properties is analyzed.The results show that,with the increase of the film thickness,the dark conductivity, photoconductivity and threshold voltage increase, the optical gap and peak ratio of TA to TO in the Raman spectra decrease, the refractive index keeps almost constant, and the optical absorption coefficient and current ratio of on/off state first maximize and then reduce.

  1. Film-thickness dependence of structure formation in ultra-thin polymer blend films

    CERN Document Server

    Gutmann, J S; Stamm, M

    2002-01-01

    We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

  2. Anisotropic resistivity in plasma-sprayed silicon thick films

    Science.gov (United States)

    Kharas, Boris Dave; Sampath, Sanjay; Gambino, Richard J.

    2005-05-01

    Silicon thick films deposited by thermal plasma spray are of interest as inexpensive electronic materials for conformal meso-scale electronics applications. In addition they also serve as a model system for the investigation of electrical properties of coatings with layered anisotropy. In this study impedance spectroscopy was used to measure the complex resistivity of free-standing 64μm-thick polycrystalline silicon films deposited by thermal plasma spraying in an atmospheric ambient. Impedance spectroscopy measurements were taken in the through-thickness (across-splat) and edge-to-edge (in-splat) directions and revealed a resistivity difference of approximately 7.5±0.23 between the two directions. The complex resistivity results are explained on the basis of a brick-layer type model, associated with the layered splat microstructure obtained from cross-sectional transmission electron microscope imaging of the films. In addition a circuit-based model made up of parallel, resistor-capacitor elements in series, and Cole-Cole and Davidson-Cole impedance functions were used to fit the impedance data to extract material parameters and contributions from the grains and splat boundaries. Furthermore, thermal processing and phosphorus doping is shown to lead to higher and lower resistivity, respectively, in the films.

  3. Effects of thickness on electronic structure of titanium thin films

    Indian Academy of Sciences (India)

    Güvenç Akgül

    2014-02-01

    Effects of thickness on the electronic structure of e-beam evaporated thin titanium films were studied using near-edge X-ray absorption fine structure (NEXAFS) technique at titanium 2,3 edge in total electron yield (TEY) mode and transmission yield mode. Thickness dependence of 2,3 branching ratio (BR) of titanium was investigated and it was found that BR below 3.5 nm shows a strong dependence on film thickness. Mean electron escape depth () in titanium, an important parameter for surface applications, was determined to be = 2.6 ± 0.1 nm using 2,3 resonance intensity variation as a function of film thickness. The average 3/2 white line intensity ratio of titanium was obtained as 0.89 from the ratio of amplitudes of each 3 and 2 peaks and 0.66 from the integrated area under each 3 and 2 peaks. In addition, a theoretical calculation for pure titanium was presented for comparison with experimental data.

  4. Chemical vapor deposition reactor. [providing uniform film thickness

    Science.gov (United States)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  5. Effect of film thickness on microstructure parameters and optical constants of CdTe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.co [Physics Department, Faculty of Science, Qassim University, Buridah 51452 (Saudi Arabia); Physics Department, Faculty of Science, Al-Azhar University, Assiut, P.O. 71452 (Egypt); Afify, N. [Physics Department, Assiut University, Assiut (Egypt); El-Taher, A. [Physics Department, Faculty of Science, Qassim University, Buridah 51452 (Saudi Arabia); Physics Department, Faculty of Science, Al-Azhar University, Assiut, P.O. 71452 (Egypt)

    2009-08-12

    Different thickness of cadmium telluride (CdTe) thin films was deposited onto glass substrates by the thermal evaporation technique. Their structural characteristics were studied by X-ray diffraction (XRD). The XRD experiments showed that the films are polycrystalline and have a zinc-blende (cubic) structure. The microstructure parameters, crystallite size and microstrain were calculated. It is observed that the crystallite size increases and microstrain decreases with the increase in the film thickness. The fundamental optical parameters like band gap and extinction coefficient are calculated in the strong absorption region of transmittance and reflectance spectrum. The possible optical transition in these films is found to be allowed direct transition with energy gap increase from 1.481 to 1.533 eV with the increase in the film thickness. It was found that the optical band gap increases with the increase in thickness. The refractive indices have been evaluated in transparent region in terms of envelope method, which has been suggested by Swanepoul in the transparent region. The refractive index can be extrapolated by Cauchy dispersion relationship over the whole spectral range, which extended from 400 to 2500 nm. It is observed that the refractive index, n increases on increasing the film thickness up to 671 nm and then the variation of n with higher thickness lie within the experimental errors.

  6. Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

    Science.gov (United States)

    Jiwei, Zhai; Cheung, M. H.; Xu, Zheng Kui; Li, Xin; Chen, Haydn; Colla, Eugene V.; Wu, T. B.

    2002-11-01

    Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O3 thin films were deposited via a sol-gel process on LaNiO3-coated silicon substrates. Films showed a strong (001) preferred orientation upon annealing at 500-700 degC for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35 muC/cm2, which is equal to that observed in bulk samples.

  7. A sensitive magnetic field sensor using BPSCCO thick film

    Indian Academy of Sciences (India)

    S Vijay Srinivas; Abhijit Ray; T K Dey

    2001-08-01

    A highly sensitive magnetic sensor operating at liquid nitrogen temperature and based on BPSCCO screen-printed thick film, is reported. The sensor resistance for an applied magnetic field of 100 × 10–4T(100 gauss) exhibits an increase by 360% of its value in zero field at 77.4 K. The performance of the sensor in presence of magnetic field, the hysteretic features and the effect of thermal cycling, has been discussed.

  8. High-performance PMN-PT thick films.

    Science.gov (United States)

    Kosec, Marija; Ursic, Hana; Holc, Janez; Hrovat, Marko; Kuscer, Danjela; Malic, Barbara

    2010-10-01

    This article describes some of our work on ₀.₆₅Pb(Mg₁/₃Nb(₂/₃)O₃-₀.₃₅PbTiO₃ (0.65PMN-0.35PT) thick films printed on alumina substrates. These thick films, with the nominal composition ₀.₆₅Pb(Mg₁/₃Nb(₂/₃)O₃-₀.₃₅PbTiO₃, were produced by screen-printing and firing a paste prepared from an organic vehicle and pre-reacted fine particles of avery chemically homogeneous powder. To improve the adhesion of the 0.65PMN-0.35PT to the platinized alumina substrate,a Pb(Zr₀.₅₃Ti₀.₄₇)O₃ layer was deposited between the electrode and the substrate. The samples were then sintered at 950 °C for 2 h with various amounts of packing powder on the alumina (Al₂O₃) substrates. The sintering procedure was optimized to obtain dense 0.65PMN-0.35PT films. The films were then characterized using scanning electron microscopy as well as measurements of the dielectric and piezoelectric constants.The electrostrictive behavior of the 0.65PMN-0.35PT thick films was investigated using an atomic force microscope(AFM). Finally, substrate-free, large-displacement bending type actuators were prepared and characterized, and the normalized displacement (i.e., the displacement per unit length) of the actuators was determined to be 55 μm/cm at 3.6 kV/cm.

  9. The Effect of Thickness of Aluminium Films on Optical Reflectance

    Directory of Open Access Journals (Sweden)

    Robert Lugolole

    2015-01-01

    Full Text Available In Uganda and Africa at large, up to 90% of the total energy used for food preparation and water pasteurization is from fossil fuels particularly firewood and kerosene which pollute the environment, yet there is abundant solar energy throughout the year, which could also be used. Uganda is abundantly rich in clay minerals such as ball clay, kaolin, feldspar, and quartz from which ceramic substrates were developed. Aluminium films of different thicknesses were deposited on different substrates in the diffusion pump microprocessor vacuum coater (Edwards AUTO 306. The optical reflectance of the aluminium films was obtained using a spectrophotometer (SolidSpec-3700/DUV-UV-VIS-NIR at various wave lengths. The analysis of the results of the study revealed that the optical reflectance of the aluminium films was above 50% and increased with increasing film thickness and wavelength. Thus, this method can be used to produce reflector systems in the technology of solar cooking and other appliances which use solar energy.

  10. Tape casting and partial melting of Bi-2212 thick films

    Energy Technology Data Exchange (ETDEWEB)

    Buhl, D.; Lang, T.; Heeb, B. [Nichtmetallische Werkstoffe, Zuerich (Switzerland)] [and others

    1994-12-31

    To produce Bi-2212 thick films with high critical current densities tape casting and partial melting is a promising fabrication method. Bi-2212 powder and organic additives were mixed into a slurry and tape casted onto glass by the doctor blade tape casting process. The films were cut from the green tape and partially molten on Ag foils during heat treatment. We obtained almost single-phase and well-textured films over the whole thickness of 20 {mu}m. The orientation of the (a,b)-plane of the grains were parallel to the substrate with a misalignment of less than 6{degrees}. At 77K/OT a critical current density of 15`000 A/cm{sup 2} was reached in films of the dimension 1cm x 2cm x 20{mu}m (1{mu}V/cm criterion, resistively measured). At 4K/OT the highest value was 350`000 A/cm{sup 2} (1nV/cm criterion, magnetically measured).

  11. An Investigation of the Relationship between Resistance and Thickness of Deposited Nickel Thin Film Resistors

    Directory of Open Access Journals (Sweden)

    Ericam R.R. Mucunguzi-Rugwebe

    2013-09-01

    Full Text Available The main purpose of this study is finding the relationship between resistance and thickness of deposited Nickel Thin Film Resistors. It was found that the Sheet Resistance, Rs, is inversely proportional to the thickness of the film on the substrate. It was also observed that when the film thickness is greater than 50 nm, films behave like ordinary resistors. In other words in bulk, films obey Ohm’s law if other physical quantities remain constant.

  12. Effect of film thickness on the columnar packing structures of discotic supramolecules in thin films.

    Science.gov (United States)

    Kim, Hyo-Sik; Choi, Sung-Min; Pate, Brian D; Park, Po Gyu

    2009-10-19

    The effects of film thickness on the columnar packing structure of discotic supramolecules in a thin supported film have been investigated by grazing-incidence small-angle X-ray scattering technique using magnetically aligned cobalt octa(n-decylthio)porphyrazine (CoS10) films on octadecyltrichlorosilane (OTS)-functionalized substrates as model systems. Magnetically aligned CoS10 films with a range of film thicknesses (49-845 nm) form uniaxially oriented 'edge-on' columnar superstructures with their columnar directors perpendicular to the applied magnetic field. However, the orientational ordering of the columnar packing in the plane perpendicular to the applied magnetic field is strongly dependent on the film thickness. While being damped by the elasticity of the side chains of CoS10, the strong interfacial interaction at the film-substrate interface propagates up to 50-100 nm from the substrate, maintaining the orientation of columnar packing in the plane perpendicular to the applied magnetic field. When the distance from the film-substrate interface becomes larger than about 100 nm, symmetric tilting of columnar layer orientation, which saturates at 11.5 degrees , occurs due to longitudinal edge dislocations induced by accumulated elastic deformation.

  13. Optimized Performances of Thick Film Organic Lighting-Emitting Diodes

    Institute of Scientific and Technical Information of China (English)

    WANG Xiu-Ru; ZHANG Zhi-Qiang; MA Dong-Ge; SUN Run-Guang

    2008-01-01

    @@ The performance of organic light-emitting diodes (OLEDs) with thick film is optimized.The alternative vana-dium oxide (V2O5) and N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) layers are used to enhance holes in the emissive region, and 4,7-dipheny-1,10-phenanthroline (Bphen) doped 8-tris-hydroxyquinoline alu-minium (Alq3) is used to enhance electrons is the emissive region, thus ITO/V2O5 (8nm)/NPB (52nm)/V2O5 (8nm)/NPB (52 nm)/Alq3 (30 and 45 nm)/Alq3:Bphen (30wt%, 30 and 45 nm)/LiF (1 nm)/Al (120nm) devices are fabricated.The thick-film devices show the turn-on voltage of about 3 V and the maximal power efficiency of 4.51m/W, which is 1.46 times higher than the conventional thin-film OLEDs.

  14. Influence of films thickness and structure on the photo-response of ZnO films

    Science.gov (United States)

    Ali Yıldırım, M.; Ateş, Aytunç

    2010-04-01

    ZnO thin films were grown using Successive Ionic Layer Adsorption and Reaction (SILAR) method on glass substrates at room temperature. Annealing temperatures and film thickness effect on the structural, morphological, optical and electrical properties of the films were studied. For this as-deposited films were annealed at 200, 300, 400 and 500 °C for 30 min in oxygen atmosphere. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that the films are covered well with glass substrates and have good polycrystalline structure and crystalline levels. The film thickness effect on band gap values was investigated and band gap values were found to be within the range of 3.49-3.19 eV. The annealing temperature and light effect on electrical properties of the films were investigated and it was found that the current increased with increasing light intensity. The resistivity values were found as 10 5 Ω-cm for as-deposited films from electrical measurements. The resistivity decreased decuple with annealing temperature and decreased centuple with light emission for annealed films.

  15. Thickness Dependence of Magnetic Properties in DyFeCo Films

    Institute of Scientific and Technical Information of China (English)

    Xiong Rui; Liu Hai-lin; Mei Xue-fei; Li Zuo-yi; Yang Xiao-fei; Shi Jing

    2004-01-01

    Films of amorphous DyFeCo were deposited on glass substrates using RF sputtering deposition system. The thickness dependence of the coercivity of DyFeCo films prepared under the same sputtering conditions was investigated. It is found that the composition is nearly thickness independent, while the coercivity is shown to increase with the film thickness increasing at the beginning, then above a certain thickness decrease with the thickness increasing. The thickness dependence of the coercivity is believed to be due to microstructure-induced variations in the short-range order during the film growth.

  16. Deposition of ZnO Films on Freestanding CVD Thick Diamond Films

    Institute of Scientific and Technical Information of China (English)

    SUN Jian; BAI Yi-Zhen; YANG Tian-Peng; XU Yi-Bin; WANG Xin-Sheng; DU Guo-Tong; WU Han-Hua

    2006-01-01

    @@ For ZnO/diamond structured surface acoustic wave (SAW) filters, performance is sensitively dependent on the quality of the ZnO films. In this paper, we prepare highly-oriented and fine grained polycrystalline ZnO thin films with excellent surface smoothness on the smooth nucleation surfaces of freestanding CVD diamond films by metal organic chemical vapour deposition (MOCVD). The properties of the ZnO films are characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) spectrum. The influences of the deposition conditions on the quality of ZnO films are discussed briefly. ZnO/freestanding thick-diamond-film layered SAW devices with high response frequencies are expected to be developed.

  17. Thick film magnetic nanoparticulate composites and method of manufacture thereof

    Science.gov (United States)

    Ma, Xinqing (Inventor); Zhang, Yide (Inventor); Ge, Shihui (Inventor); Zhang, Zongtao (Inventor); Yan, Dajing (Inventor); Xiao, Danny T. (Inventor)

    2009-01-01

    Thick film magnetic/insulating nanocomposite materials, with significantly reduced core loss, and their manufacture are described. The insulator coated magnetic nanocomposite comprises one or more magnetic components, and an insulating component. The magnetic component comprises nanometer scale particles (about 1 to about 100 nanometers) coated by a thin-layered insulating phase. While the intergrain interaction between the immediate neighboring magnetic nanoparticles separated by the insulating phase provides the desired soft magnetic properties, the insulating material provides high resistivity, which reduces eddy current loss.

  18. Thick film fabrication of aluminum nitride microcircuits. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Perdieu, L.H.

    1994-03-01

    A new substrate material, aluminum nitride (AlN), and 11 new thick film inks were analyzed to determine their chemical compatibility, their electrical properties, their mechanical properties, and their overall suitability for use in the manufacturing of high-power microcircuits with efficient thermal properties. Because high-power chips emit a great deal of heat in a small surface area, a new substrate material was needed to dissipate that heat faster than the substrate material currently in use. Overall, the new materials were found to be acceptable for accomplishing this purpose.

  19. Thickness effect on the microstructure, morphology and optoelectronic properties of ZnS films

    Science.gov (United States)

    Prathap, P.; Revathi, N.; Venkata Subbaiah, Y. P.; Ramakrishna Reddy, K. T.

    2008-01-01

    Thin films of ZnS with thicknesses ranging from 100 to 600 nm have been deposited on glass substrates by close spaced thermal evaporation. All the films were grown at the same deposition conditions except the deposition time. The effect of thickness on the physical properties of ZnS films has been studied. The experimental results indicated that the thickness affects the structure, lattice strain, surface morphology and optoelectronic properties of ZnS films significantly. The films deposited at a thickness of 100 nm showed hexagonal structure whereas films of thickness 300 nm or more showed cubic structure. However, coexistence of both cubic and hexagonal structures was observed in the films of 200 nm thickness. The surface roughness of the films showed an increasing trend at higher thicknesses of the films. A blue-shift in the energy band gap along with an intense UV emission band was observed with the decrease of film thickness, which are ascribed to the quantum confinement effect. The behaviour of optical constants such as refractive index and extinction coefficient were analysed. The variation of refractive index and extinction coefficient with thickness was explained on the basis of the contribution from the packing density of the layers. The electrical resistivity as well as the activation energy were evaluated and found to decrease with the increase of film thickness. The thickness had a significant influence on the optical band gap as well as the luminescence intensity.

  20. Effect of film thickness on the phase behaviors of diblock copolymer thin film.

    Science.gov (United States)

    Jung, Jueun; Park, Hae-Woong; Lee, Sekyung; Lee, Hyojoon; Chang, Taihyun; Matsunaga, Kazuyuki; Jinnai, Hiroshi

    2010-06-22

    A phase diagram was constructed for a polystyrene-block-polyisoprene (PS-b-PI, M(W) = 32 700, f(PI) = 0.670) in thin films on Si wafer as a function of film thickness over the range of 150-2410 nm (7-107L(0) (L(0): domain spacing)). The PS-b-PI exhibits a variety of ordered phases from hexagonally perforated lamellar (HPL) via double gyroid (DG) to hexagonally packed cylinder (HEX) before going to the disordered (DIS) phase upon heating. The morphology of the PS-b-PI in thin film was investigated by grazing incidence small-angle X-ray scattering, transmission electron microscopy, and transmission electron microtomography. In thin film, the phase transition temperature is difficult to be determined unequivocally with in situ heating processes since the phase transition is slow and two phases coexist over a wide temperature range. Therefore, in an effort to find an "equilibrium" phase, we determined the long-term stable phase formed after cooling the film from the DIS phase to a target temperature and annealing for 24 h at the temperature. The temperature windows of stable ordered phases are strongly influenced by the film thickness. As the film thickness decreases, the temperature window of layer-like structures such as HPL and HEX becomes wider, whereas that of the DG stable region decreases. For the films thinner than 160 nm (8L(0)), only the HPL phase was found. In the films exhibiting DG phase, a perforated layer structure at the free surface was found, which gradually converts to the internal DG structure. The relief of interfacial tension by preferential wetting appears to play an important role in controlling the morphology in very thin films.

  1. Optical properties and structures of silver thin films deposited by magnetron sputtering with different thicknesses

    Institute of Scientific and Technical Information of China (English)

    Xilian Sun; Ruijin Hong; Haihong Hou; Zhengxiu Fan; Jianda Shao

    2006-01-01

    A series of thin Ag films with different thicknesses grown under identical conditions are analyzed by means of spectrophotometer. From these measurements the values of refractive index and extinction coefficient are calculated. The films are deposited onto BK7 glass substrates by direct current (DC) magnetron sputtering. It is found that the optical properties of the Ag films can be affected by films thickness.Below critical thickness of 17 nm, which is the thickness at which Ag films form continuous films, the optical properties and constants vary significantly with thickness increasing and then tend to a stable value up to about 40 nm. At the same time, X-ray diffraction measurement is carried out to examine the microstructure evolution of Ag films as a function of films thickness. The relation between optical properties and microstructure is discussed.

  2. Effect of film thickness on magnetic properties of Cr/SmCo/Cr films

    Institute of Scientific and Technical Information of China (English)

    LI Ning; LI Baohe; FENG Chun; LI Minghua; YU Guanghua

    2012-01-01

    Cr/SmCo/Cr films with different SmCo thickness were deposited on glass substrates by magnetron sputtering,followed by an annealing process at 550℃for 20 min.Experimental results showed that the SmCo fihn of 30 nm exhibited two-phase behavior in the demagnetization process,the obvious kink was observed near zero.For the SmCo film of 50 nm,the kink was invisible,and a single phase like behavior was obtained in the demagnetization process.The reversal behavior became consistent in the thicker films.Moreover,the coercivity reduced and the saturated magnetization increased obviously with the increasing thickness.X-ray diffraction results indicated that the average grain size of SmCo5 in the thicker films were almost 30 nm,but the quantity of SmCo5 grains increased with the increasing thickness,which enhanced the intergrain exchange coupling (IEC) of the SmCo5 hard phases.The increase of lEC improved the magnetic properties of SmCo films with increasing thickness.

  3. Thickness optimization of Mo films for Cu(InGa)Se2 solar cell applications

    Institute of Scientific and Technical Information of China (English)

    Li Wei; Zhao Yan-Min; Liu Xing-Jiang; Ao Jian-Ping; Sun Yun

    2011-01-01

    Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se2 solar cell can reach a conversion efficiency of 13.15%.

  4. Nitrogen dioxide sensing properties of sprayed tungsten oxide thin film sensor: Effect of film thickness.

    Science.gov (United States)

    Ganbavle, V V; Mohite, S V; Agawane, G L; Kim, J H; Rajpure, K Y

    2015-08-01

    We report a study on effect of film thickness on NO2 sensing properties of sprayed WO3 thin films. WO3 thin films varying in thicknesses are deposited onto the glass substrates by simple spray pyrolysis technique by varying the volume of spray solution.Thin film gas sensors are characterized by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM) and photoluminescence (PL) techniques to study their physical properties. Film having thickness 745nm has shown highest gas response of 97% with 12 and 412s response and recovery times, respectively towards 100ppm NO2 concentration. Gas response of 20% is observed towards 10ppm NO2 at 200°C operating temperature. Sensitivity of the optimal sensor is 0.83%/ppm when operating at 200°C with 10ppm lower detection limit. The response of the sensor is reproducible and WO3 films are highly selective towards NO2 in presence of mist of various interfering gases viz. H2S, NH3, LPG, CO and SO2.

  5. Thick Films acoustic sensors devoted to MTR environment measurements. Thick Films acoustic sensors devoted to Material Testing Reactor environment measurements

    Energy Technology Data Exchange (ETDEWEB)

    Very, F.; Rosenkrantz, E.; Combette, P.; Ferrandis, J.Y. [University Montpellier, IES, UMR 5214, F-34000, Montpellier (France); CNRS, IES, UMR 5214, F-34000, Montpellier (France); Fourmentel, D.; Destouches, C.; Villard, J.F. [CEA, DEN, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St Paul lez Durance (France)

    2015-07-01

    The development of advanced instrumentation for in-pile experiments in Material Testing Reactor constitutes a main goal for the improvement of the nuclear fuel behavior knowledge. An acoustic method for fission gas release detection was tested with success during a first experiment called REMORA 3 in 2010 and 2011, and the results were used to differentiate helium and fission gas release kinetics under transient operating conditions. This experiment was lead at OSIRIS reactor (CEA Saclay, France). The maximal temperature on the sensor during the irradiation was about 150 deg. C. In this paper we present a thick film transducer produce by screen printing process. The screen printing of piezoelectric offers a wide range of possible applications for the development of acoustic sensors and piezoelectric structure for measurements in high temperature environment. We firstly produced a Lead Zirconate Titanate (PZT) based paste composed of Pz27 powder from Ferroperm, CF7575 glass, and organic solvent ESL 400. Likewise a Bismuth Titanate based paste synthesized in our laboratory was produced. With these inks we produced thick film up to 130 μm by screen printing process. Material properties characterizations of these thick-film resonators are essential for device design and applications. The piezoelectric coefficients d33 and pyro-electric P(T) coefficient are investigated. The highest P(T) and d33 are respectively 80 μC.m{sup -2}.K{sup -1} and 130 μC.N{sup -1} for the PZT transducer -which validates the fabrication process-. In view of the development of this transducer oriented for high temperature and irradiation environment, we investigated the electrical properties of the transducers for different ranges of frequencies and temperature - from 20 Hz up to 40 MHz between 30 and 400 deg. C. We highlight the evolution of the impedance response and piezoelectric parameters of screen printed piezoelectric structures on alumina. Shortly an irradiation will be realized in

  6. Environmentally compatible solder materials for thick film hybrid assemblies

    Energy Technology Data Exchange (ETDEWEB)

    Hosking, F.M.; Vianco, P.T.; Rejent, J.A.; Hernandez, C.L. [Sandia National Labs., Albuquerque, NM (United States). Materials and Process Sciences Center

    1997-02-01

    New soldering materials and processes have been developed over the last several years to address a variety of environmental issues. One of the primary efforts by the electronics industry has involved the development of alternative solders to replace the traditional lead-containing alloys. Sandia National Laboratories is developing such alternative solder materials for printed circuit board and hybrid microcircuit (HMC) applications. This paper describes the work associated with low residue, lead-free soldering of thick film HMC`s. The response of the different materials to wetting, aging, and mechanical test conditions was investigated. Hybrid test vehicles were designed and fabricated with a variety of chip capacitors and leadless ceramic chip carriers to conduct thermal, electrical continuity, and mechanical evaluations of prototype joints. Microstructural development along the solder and thick film interface, after isothermal solid state aging over a range of elevated temperatures and times, was quantified using microanalytical techniques. Flux residues on soldered samples were stressed (temperature-humidity aged) to identify potential corrosion problems. Mechanical tests also supported the development of a solder joint lifetime prediction model. Progress of this effort is summarized.

  7. Ethanol vapour sensing properties of screen printed WO3 thick films

    Indian Academy of Sciences (India)

    R S Khadayate; R B Waghulde; M G Wankhede; J V Sali; P P Patil

    2007-04-01

    This paper presents ethanol vapour sensing properties of WO3 thick films. In this work, the WO3 thick films were prepared by standard screen-printing method. These films were characterized by X-ray diffraction (XRD) measurements and scanning electron microscopy (SEM). The ethanol vapour sensing properties of these thick films were investigated at different operating temperatures and ethanol vapour concentrations. The WO3 thick films exhibit excellent ethanol vapour sensing properties with a maximum sensitivity of ∼1424.6% at 400°C in air atmosphere with fast response and recovery time.

  8. Influence of colorant and film thickness on thermal aging characteristics of oxo-biodegradable plastic bags

    Science.gov (United States)

    Leuterio, Giselle Lou D.; Pajarito, Bryan B.; Domingo, Carla Marie C.; Lim, Anna Patricia G.

    2016-05-01

    Functional, lightweight, strong and cheap plastic bags incorporated with pro-oxidants undergo accelerated degradation under exposure to heat and oxygen. This work investigated the effect of colorant and film thickness on thermal aging characteristics of commercial oxo-biodegradable plastic bag films at 70 °C. Degradation is monitored through changes in infrared absorption, weight, and tensile properties of thermally aged films. The presence of carbonyl band in infrared spectrum after 672 h of thermal aging supports the degradation behavior of exposed films. Results show that incorporation of colorant and increasing thickness exhibit low maximum weight uptake. Titanium dioxide as white colorant in films lowers the susceptibility of films to oxygen uptake but enhances physical degradation. Higher amount of pro-oxidant loading also contributes to faster degradation. Opaque films are characterized by low tensile strength and high elastic modulus. Decreasing the thickness contributes to lower tensile strength of films. Thermally aged films with colorant and low thickness promote enhanced degradation.

  9. Preparation of Lead-free Thick-film Resistor Pastes

    Institute of Scientific and Technical Information of China (English)

    LUO Hui; LI Shihong; LIU Jisong; CHEN Liqiao; YING Xingang; WANG Ke

    2012-01-01

    The preparation of lead-free thick-film resistors are reported:using RuO2 and ruthenates as conductive particles,glass powders composed of B2O3,SiO2,CaO and Al2O3 as insulating phase,adding organic matter which mainly consists of ethyl cellulose and terpineol to form printable pastes.Resistors were fabricated and sintered by conventional screen-printing on 96%Al2O3 substrates,and then sintering in a belt furnace.X-ray diffraction (XRD) and electron scanning microscopy (SEM) have been used to characterize the conductive particles.The resistors exhibit good retiring stability and low temperature coefficient of resistance.Sheet resistance spans from about 80 Ω/□ to 600 Ω/□.The resistors prepared are qualified for common use.

  10. Overlay mark optimization for thick-film resist overlay metrology

    Institute of Scientific and Technical Information of China (English)

    Zhu Liang; Li Jie; Zhou Congshu; Gu Yili; Yang Huayue

    2009-01-01

    For thick resist implant layers, such as a high voltage P well and a deep N well, systematic and uncorrectable overlay residues brought about by the tapered resist profiles were found. It was found that the tapered profile is closely related to the pattern density. Potential solutions of the manufacturing problem include hardening the film solidness or balancing the exposure density. In this paper, instead of focusing on the process change methodology,we intend to solve the issue of the overlay metrology error from the perspective of the overlay mark design. Based on the comparison of the overlay performances between the proposed overlay mark and the original design, it is shown that the optimized overlay mark target achieves better performance in terms of profiles, dynamic precision,tool induced shift (TIS), and residues. Furthermore, five types of overlay marks with dummy bars are studied, and a recommendation for the overlay marks is given.

  11. Temperature- and thickness-dependent elastic moduli of polymer thin films.

    Science.gov (United States)

    Ao, Zhimin; Li, Sean

    2011-03-22

    The mechanical properties of polymer ultrathin films are usually different from those of their counterparts in bulk. Understanding the effect of thickness on the mechanical properties of these films is crucial for their applications. However, it is a great challenge to measure their elastic modulus experimentally with in situ heating. In this study, a thermodynamic model for temperature- (T) and thickness (h)-dependent elastic moduli of polymer thin films Ef(T,h) is developed with verification by the reported experimental data on polystyrene (PS) thin films. For the PS thin films on a passivated substrate, Ef(T,h) decreases with the decreasing film thickness, when h is less than 60 nm at ambient temperature. However, the onset thickness (h*), at which thickness Ef(T,h) deviates from the bulk value, can be modulated by T. h* becomes larger at higher T because of the depression of the quenching depth, which determines the thickness of the surface layer δ.

  12. Film thickness dependent ordering dynamics of lamellar forming diblock copolymer thin films.

    Science.gov (United States)

    Peters, Robert D; Dalnoki-Veress, Kari

    2012-12-01

    Ellipsometry is used in a novel way to study the ordering dynamics of symmetric poly(styrene-methyl methacrylate) diblock copolymer thin films. Ordered thin films form lamellae parallel to the substrate which can form islands or holes at the free surface to ensure commensurability of the layers. The sensitivity of ellipsometry provides the unique ability to probe morphological changes during the ordering process before the ultimate formation of islands or holes at the free surface. We observe three distinct stages in the ordering process: i) an ordering into an intermediate state, ii) an incubation time where the film structure remains constant and iii) the nucleation of islands or holes to achieve equilibrium lamellar morphology. The time-resolved measurement of an incubation period and initial ordering stage provides a means for studying the effect of thickness on the ordering kinetics. The dependence of incubation time on the commensurability of the initial film height is explained using strong segregation theory.

  13. CO2 Selective Potentiometric Sensor in Thick-film Technology

    Directory of Open Access Journals (Sweden)

    Ralf Moos

    2008-08-01

    Full Text Available A potentiometric sensor device based on screen-printed Nasicon films was investigated. In order to transfer the promising sensor concept of an open sodium titanate reference to thick film technology, “sodium-rich” and “sodium-poor” formulations were compared. While the “sodium-rich” composition was found to react with the ion conducting Nasicon during thermal treatment, the “sodium-poor” reference mixture was identified as an appropriate reference composition. Screen-printed sensor devices were prepared and tested with respect to CO2 response, reproducibility, and cross-interference of oxygen. Excellent agreement with the theory was observed. With the integration of a screen-printed heater, sensor elements were operated actively heated in a cold gas stream.

  14. The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

    Science.gov (United States)

    Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

    2014-09-01

    The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

  15. In vivo tear film thickness measurement and tear film dynamics visualization using spectral domain optical coherence tomography.

    Science.gov (United States)

    Aranha Dos Santos, Valentin; Schmetterer, Leopold; Gröschl, Martin; Garhofer, Gerhard; Schmidl, Doreen; Kucera, Martin; Unterhuber, Angelika; Hermand, Jean-Pierre; Werkmeister, René M

    2015-08-10

    Dry eye syndrome is a highly prevalent disease of the ocular surface characterized by an instability of the tear film. Traditional methods used for the evaluation of tear film stability are invasive or show limited repeatability. Here we propose a new non-invasive fully automated approach to measure tear film thickness based on spectral domain optical coherence tomography and on an efficient delay estimator. Silicon wafer phantom were used to validate the thickness measurement. The technique was applied in vivo in healthy subjects. Series of tear film thickness maps were generated, allowing for the visualization of tear film dynamics. Our results show that the in vivo central tear film thickness measurements are precise and repeatable with a coefficient of variation of about 0.65% and that repeatable tear film dynamics can be observed. The presented approach could be used in clinical setting to study patients with dry eye disease and monitor their treatments.

  16. The effect of grain size and film thickness on the thermal expansion coefficient of copper thin films.

    Science.gov (United States)

    Hwang, Seulgi; Kim, Youngman

    2011-02-01

    Cu thin films underwent thermal cycling to determine their coefficient of thermal expansion (CTE). The thermal stress of the Cu thin films with various microstructures (different grain size and film thickness) was measured using a curvature measurement system. The thermal expansion coefficients of the films were obtained from the slope of the stress-temperature curve with the knowledge of the Young's modulus and Poisson's ratio. The change in thermal stress with temperature of the Cu thin films tended to decrease with increasing grain size, resulting in an increase in the CTE. The thickness of Cu thin film had little effect on the thermal stress or the CTE.

  17. Novel Ballistic Processing of Sn-0.7Cu Thick Films

    Science.gov (United States)

    Cavero, D.; Stewart, K.; Morsi, K.

    2016-11-01

    The present paper discusses a novel process (Ballistic Processing) for the ultra-rapid processing of textured and un-textured thick and potentially thin films. The effect of processing velocity (14.6 to 36.1 m/s) on the developed external structure and internal microstructure of Sn-0.7Cu thick film is discussed. Film thicknesses ranging from 6.08 to 12.79 μm were produced and characterized by two-dimensional hypoeutectic microstructures. Both film thickness and dendrite arm spacing decreased with an increase in processing velocity.

  18. Non-linear dynamics of inlet film thickness during unsteady rolling process

    Science.gov (United States)

    Fu, Kuo; Zang, Yong; Gao, Zhiying; Qin, Qin; Wu, Diping

    2016-05-01

    The inlet film thickness directly affects film and stress distribution of rolling interfaces. Unsteady factors, such as unsteady back tension, may disturb the inlet film thickness. However, the current models of unsteady inlet film thickness lack unsteady disturbance factors and do not take surface topography into consideration. In this paper, based on the hydrodynamic analysis of inlet zone an unsteady rolling film model which concerns the direction of surface topography is built up. Considering the small fluctuation of inlet angle, absolute reduction, reduction ratio, inlet strip thickness and roll radius as the input variables and the fluctuation of inlet film thickness as the output variable, the non-linear relationship between the input and output is discussed. The discussion results show that there is 180° phase difference between the inlet film thickness and the input variables, such as the fluctuant absolute reduction, the fluctuant reduction ratio and non-uniform inlet strip thickness, but there is no phase difference between unsteady roll radius and the output. The inlet angle, the steady roll radius and the direction of surface topography have significant influence on the fluctuant amplitude of unsteady inlet film thickness. This study proposes an analysis method for unsteady inlet film thickness which takes surface topography and new disturbance factors into consideration.

  19. Thick-film acoustic emission sensors for use in structurally integrated condition-monitoring applications.

    Science.gov (United States)

    Pickwell, Andrew J; Dorey, Robert A; Mba, David

    2011-09-01

    Monitoring the condition of complex engineering structures is an important aspect of modern engineering, eliminating unnecessary work and enabling planned maintenance, preventing failure. Acoustic emissions (AE) testing is one method of implementing continuous nondestructive structural health monitoring. A novel thick-film (17.6 μm) AE sensor is presented. Lead zirconate titanate thick films were fabricated using a powder/sol composite ink deposition technique and mechanically patterned to form a discrete thick-film piezoelectric AE sensor. The thick-film sensor was benchmarked against a commercial AE device and was found to exhibit comparable responses to simulated acoustic emissions.

  20. Charge transport in films of Geobacter sulfurreducens on graphite electrodes as a function of film thickness

    KAUST Repository

    Jana, Partha Sarathi

    2014-01-01

    Harnessing, and understanding the mechanisms of growth and activity of, biofilms of electroactive bacteria (EAB) on solid electrodes is of increasing interest, for application to microbial fuel and electrolysis cells. Microbial electrochemical cell technology can be used to generate electricity, or higher value chemicals, from organic waste. The capability of biofilms of electroactive bacteria to transfer electrons to solid anodes is a key feature of this emerging technology, yet the electron transfer mechanism is not fully characterized as yet. Acetate oxidation current generated from biofilms of an EAB, Geobacter sulfurreducens, on graphite electrodes as a function of time does not correlate with film thickness. Values of film thickness, and the number and local concentration of electrically connected redox sites within Geobacter sulfurreducens biofilms as well as a charge transport diffusion co-efficient for the biofilm can be estimated from non-turnover voltammetry. The thicker biofilms, of 50 ± 9 μm, display higher charge transport diffusion co-efficient than that in thinner films, as increased film porosity of these films improves ion transport, required to maintain electro-neutrality upon electrolysis. This journal is © the Partner Organisations 2014.

  1. Microstructure and texture analysis of YBCO thick film with peritectic growth on unoriented silver substrate

    Institute of Scientific and Technical Information of China (English)

    WANG Jue; MALOUFI Nabila; FAN Zhanguo; XUE Xiangxin; ESLING Claude

    2009-01-01

    YBCO textured thick film was prepared by direct periteetic growth method. Microstructure of the film was characterized. Electron backscattered diffraction (EBSD) technique was applied to the film for quantitative texture analysis. The main difficulty in resolving the ori-entation of YBCO pseudo-cubic structure was investigated. Automated orientation mapping was performed on YBCO thick film. Local tex-ture was presented in the form of orientation maps. Misorientation distribution and crystal growth characterization in the YBCO thick film were revealed. Large domains with well-aligned YBCO grains were formed. Each domain presented clear in-plane and out-plane textures.

  2. Thickness dependent CARS measurement of polymeric thin films without depth-profiling.

    Science.gov (United States)

    Choi, Dae Sik; Jeoung, Sae Chae; Chon, Byung-Hyuk

    2008-02-18

    Coherent anti-Stokes Raman scattering (CARS) microscopy is demonstrated to be a promising optical method for the characterization of polymer films with film thickness varying between 180 nm to 4300 nm. In case of PMMA films with a thickness of few hundreds of nanometers, the observed CARS signal was mainly associated with the interference effect of large nonresonant CARS field from glass substrate and the weak resonant field of PMMA. The dependence of resonant CARS intensity of PMMA film on film thickness is in good agreement with the theoretical prediction on a CARS field. The current work offers potential possibilities of noninvasive thickness measurement of polymeric thin film of thickness less than 180 nm by multiplex CARS microscopy without depth-profiling.

  3. Development of Dual-light Path Monitoring System of Optical Thin-film Thickness

    Institute of Scientific and Technical Information of China (English)

    XU Shi-jun

    2005-01-01

    The accurate monitoring of optical thin-film thickness is a key technique for depositing optical thin-film. For existing coating equipments, which are low precision and automation level on monitoring thin-film thickness, a new photoelectric control and analysis system has been developed. In the new system, main techniques include a photoelectric system with dual-light path, a dual-lock-phase circuit system and a comprehensive digital processing-control-analysis system.The test results of new system show that the static and dynamic stabilities and the control precision of thin-film thickness are extremely increased. The standard deviation of thin-film thickness, which indicates the duplication of thin-film thickness monitoring, is equal to or less than 0.72%. The display resolution limit on reflectivity is 0.02 %. In the system, the linearity of drift is very high, and the static drift ratio approaches zero.

  4. Preparation and characterization of microcrack-free thick YBa2Cu3O7-δ films

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    High quality epitaxial YBa2Cu3O7-δ (YBCO) superconducting films were fabricated on (00l) LaAlO3 substrates using the direct-current sputtering method. The attainment of an unusually high film thickness (up to 2.0 μm) without microcracking was attributed in part to the presence of pores correlated with yttrium-rich composition in the films. The influence of the film thickness on the microstructure was investigated by X-ray diffraction conventional scan (θ-2θ, ω-scan, pole figure) and high-resolution reciprocal space mapping. The films were c-axis oriented with no a-axis-oriented grains up to the thickness of 2 μm. The surface morphology and the critical current density (Jc) strongly depended on the film thickness.Furthermore, the reasons for these thickness dependences were elucidated in derail.

  5. Layer-by-layer assembly of nanocomposite films with thickness up to hundreds of nanometers

    Institute of Scientific and Technical Information of China (English)

    ZHOU Ling-de; YAN Yu-hua; YU Hai-hu; GU Er-dan; JIANG De-sheng

    2006-01-01

    Polyelectrolyte/polyelectrolyte, organic molecule/colloidal CdS and polyelectrolyte/MWCNT films were fabricated via the layer-by-layer assembling technique. The assembled films were characterized by UV-vis spectrophotometer, X-ray diffractometry,nano profilometer and scanning electron microscopy. The results demonstrate that the layer-by-layer assembling technique can be used to make the nanoscaled films from polyelectrolytes and thicker composite films from suitable precursor materials. Both organic molecule/colloidal CdS films and PEI/MWCNT films with thickness of hundreds of nanometers were obtained. For the organic molecule/colloidal CdS films, a reasonable explanation for the result is that both the organic molecules and the CdS particles aggregate in the films. For the PEI/MWCNT films, obviously, it is the MWCNT that makes the great contribution to the film thickness.

  6. Raman micro-spectroscopy for quantitative thickness measurement of nanometer thin polymer films

    NARCIS (Netherlands)

    Liszka, Barbara M.; Lenferink, Aufried T.M.; Witkamp, Geert-Jan; Otto, Cees

    2015-01-01

    The sensitivity of far-field Raman micro-spectroscopy was investigated to determine quantitatively the actual thickness of organic thin films. It is shown that the thickness of organic films can be quantitatively determined down to 3 nm with an error margin of 20% and down to 1.5 nm with an error ma

  7. Investigation of Top/Bottom electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Pedersen, Thomas; Thomsen, Erik Vilain

    2008-01-01

    Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(ZrxTi1 - x)O3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process...

  8. Piezoelectric ceramic thick films deposited on silicon substrates by screen printing

    Science.gov (United States)

    Yao, Kui; He, Xujiang; Xu, Yuan; Chen, Meima

    2004-07-01

    Screen-printing processes offer advantages in producing directly patterned and integrated piezoelectric elements, and fill an important technological gap between thin film and bulk ceramics. However, several existing problems in the screen-printed piezoelectric thick films, such as the poor reliability and the required high sintering temperature, are significantly limiting their applications. In this work, lead zirconate titanate (PZT) ceramic films of 30 μm in thickness were deposited on Pt-coated silicon substrates by the screen-printing process, in which the ceramic pastes were prepared through a chemical liquid-phase doping approach. Porous thick films with good adhesion were formed on the substrates at a temperature of 925°C. Stable out-of-plane piezoelectric vibration of the thick films was observed with a laser scanning vibrometer (LSV), and the piezoelectric dilatation magnitude was determined accordingly. Our piezoelectric measurements through the areal displacement detection with LSV exhibited distinct advantages for piezoelectric film characterization, including high reliability, high efficiency, and comprehensive information. The longitudinal piezoelectric coefficients of the thick films were calculated from the measured dilatation data through a numerical simulation. High piezoelectric voltage constants were obtained due to the very low dielectric constant of the porous thick films. The application potentials of our screen-printed thick films as integrated piezoelectric sensors are discussed.

  9. Laser desorption of NO from a thick C 60 film

    Science.gov (United States)

    Hoger, T.; Marzok, C.; Jongma, R. T.; Zacharias, H.

    2006-09-01

    The desorption of NO molecules from a thick C 60 film is reported. A thermal desorption spectrum indicates two adsorption sites with binding energies of Eb = 0.30 eV and 0.55 eV. For laser desorption the fullerene surface is exposed to NO and excited by 7 ns UV laser pulses. Desorbing NO molecules are recorded state selectively as well as time resolved. The time-of-flight measurement indicates three different desorption pathways. A fast channel shows rovibronic temperatures of Trot( v″ = 0) = 370 K, Trot( v″ = 1) = 390 K and Tvib = 610 K as well as strong rotational-translational coupling. The desorption yield for the fast channel increases linearly with pulse energy with a desorption cross section of σ = (5.1 ± 0.9) × 10 -17 cm 2. Dominating the signal for small J″ values is a slow channel with low rotational and translational temperatures of about 110 K. We assign this peak to a laser-induced thermal desorption. For large pump-probe delays the data deviate from the Maxwellian flux distribution and a third channel appears with extremely late arrival times.

  10. Effect of thickness on electrical properties of SILAR deposited SnS thin films

    Science.gov (United States)

    Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

    2016-03-01

    Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

  11. Measurement of the refractive index and thickness for infrared optical films deposited on rough substrates.

    Science.gov (United States)

    Saito, M; Nakamura, S; Miyagi, M

    1992-10-01

    A novel method is proposed to evaluate the refractive index and thickness of dielectric thin films in the infrared wavelength range. The method is useful for measurement of thin films that are formed on such rough substrates as metal plates, since it utilizes only the wavelengths of interference peaks, which is slightly affected by surface roughness of the sample. The method was applied to the measurement of germanium, zinc selenide, and lead fluoride films deposited on copper substrates. Measured thicknesses agreed well with the values that were obtained by ellipsometry, and refractive indices exhibited a tendency to increase with the film thickness.

  12. Relationship between Supplied Oil Flow Rates and Oil Film Thicknesses under Starved Elastohydrodynamic Lubrication

    Directory of Open Access Journals (Sweden)

    Taisuke Maruyama

    2015-04-01

    Full Text Available Many studies have already considered starved lubrication. However, there have been no reports on the oil film thicknesses under steady starved EHL (elastohydrodynamic lubrication, where the ultra-low volume of oil supplied per unit time is uniform. The present study examined the relationship between the supplied oil flow rate and oil film thickness under steady starved lubrication. A ball-on-disk testing machine was used in experiments to measure the oil film thickness by means of optical interferometry. A microsyringe pump was used to accurately control the supplied oil flow rate. The supplied oil flow rate was kept constant, and the minimum oil film thickness was measured for 1 h after the start of the tests to determine the relationship between the supplied oil flow rate and oil film thickness.

  13. Enhanced piezoelectric performance of composite sol-gel thick films evaluated using piezoresponse force microscopy.

    Science.gov (United States)

    Liu, Yuanming; Lam, Kwok Ho; Kirk Shung, K; Li, Jiangyu; Zhou, Qifa

    2013-05-14

    Conventional composite sol-gel method has been modified to enhance the piezoelectric performance of ceramic thick films. Lead zirconate titanate (PZT) and lead magnesium niobate-lead titanate (PMN-PT) thick films were fabricated using the modified sol-gel method for ultrasonic transducer applications. In this work, piezoresponse force microscopy was employed to evaluate the piezoelectric characteristics of PZT and PMN-PT composite sol-gel thick films. The images of the piezoelectric response and the strain-electric field hysteresis loop behavior were measured. The effective piezoelectric coefficient (d33,eff) of the films was determined from the measured loop data. It was found that the effective local piezoelectric coefficient of both PZT and PMN-PT composite films is comparable to that of their bulk ceramics. The promising results suggest that the modified composite sol-gel method is a promising way to prepare the high-quality, crack-free ceramic thick films.

  14. Preparation and characterisation of novel thick sol-gel titania film photocatalysts.

    Science.gov (United States)

    Mills, Andrew; Elliott, Nicholas; Hill, George; Fallis, David; Durrant, James R; Willis, Richard L

    2003-05-01

    The preparation and characterization of thick (9 microns), clear, mechanically robust and photocatalytically active films of nanocrystalline anatase titania are described. XRD and SEM analysis show the films comprise 13 nm particles of anatase TiO2. Thin (54 nm) films of the 'paste' TiO2, along with sol-gel titania films made by a more traditional route are also prepared and characterised. All titania films mediate the photocatalytic destruction of stearic acid with a quantum yield of 0.0016 +/- 0.0003, using either 365 nm (i.e. BLB) or 254 nm (germicidal) light. P25 TiO2 films also appear to mediate the same process with a similar formal quantum efficiency. Of all the films tested, the thick paste TiO2 films are the most ideally suited for use with near UV light, for reasons which are discussed. All the titania films tested exhibit photoinduced superhydrophilicity.

  15. Film Thickness and Flow Properties of Resin-Based Cements at Different Temperatures

    Directory of Open Access Journals (Sweden)

    Bagheri R.

    2013-06-01

    Full Text Available Statement of Problem: For a luting agent to allow complete seating of prosthetic restorations, it must obtain an appropriate flow rate maintaining a minimum film thickness. The performance of recently introduced luting agents in this regard has not been evaluated. Purpose: To measure and compare the film thickness and flow properties of seven resin-containing luting cements at different temperatures (37°C, 25°C and10°C. Material and Methods: Specimens were prepared from five resin luting cements; seT (SDI, Panavia F (Kuraray, Varioloink II (Ivoclar, Maxcem (Kerr, Nexus2 (Kerr and two resin-modified glass-ionomer luting cements (RM-GICs; GC Fuji Plus (GC Corporation, and RelyX Luting 2 (3 M/ESPE. The film thickness and flow rate of each cement (n=15 was determined using the test described in ISO at three different temperatures. Results: There was a linear correlation between film thickness and flow rate for most of the materials. Cooling increased fluidity of almost all materials while the effect of temperature on film thickness was material dependent. At 37°C, all products revealed a film thickness of less than 25µm except for GC Fuji Plus. At 25°C, all cements pro-duced a film thickness of less than 27 µm except for seT. At 10°C, apart from seT and Rely X Luting 2, the remaining cements showed a film thickness smaller than 20 µm.Conclusion: Cooling increased fluidity of almost all materials, however. the film thickness did not exceed 35 µm in either condition, in spite of the lowest film thickness being demonstrated at the lowest temperature.

  16. Antiferroelectric polarization switching and dynamic scaling of energy storage: A Monte Carlo simulation

    Science.gov (United States)

    Huang, B. Y.; Lu, Z. X.; Zhang, Y.; Xie, Y. L.; Zeng, M.; Yan, Z. B.; Liu, J.-M.

    2016-05-01

    The polarization-electric field hysteresis loops and the dynamics of polarization switching in a two-dimensional antiferroelectric (AFE) lattice submitted to a time-oscillating electric field E(t) of frequency f and amplitude E0, is investigated using Monte Carlo simulation based on the Landau-Devonshire phenomenological theory on antiferroelectrics. It is revealed that the AFE double-loop hysteresis area A, i.e., the energy loss in one cycle of polarization switching, exhibits the single-peak frequency dispersion A(f), suggesting the unique characteristic time for polarization switching, which is independent of E0 as long as E0 is larger than the quasi-static coercive field for the antiferroelectric-ferroelectric transitions. However, the dependence of recoverable stored energy W on amplitude E0 seems to be complicated depending on temperature T and frequency f. A dynamic scaling behavior of the energy loss dispersion A(f) over a wide range of E0 is obtained, confirming the unique characteristic time for polarization switching of an AFE lattice. The present simulation may shed light on the dynamics of energy storage and release in AFE thin films.

  17. Effect of thickness and temperature of copper phthalocyanine films on their properties

    Directory of Open Access Journals (Sweden)

    Alieva Kh. S.

    2012-06-01

    Full Text Available The research has shown that copper phthalocyanine films, having a set of unique properties, can be successfully used as gas-sensitive coating of resistive structures. The thickness of the film, in contrast to its temperature, is not the determining factor for high sensitivity. Low operating temperature of structures with copper phthalocyanine films allows to exploit them in economy mode.

  18. Microstructural parameters and optical constants of ZnTe thin films with various thicknesses

    Science.gov (United States)

    Shaaban, Essam R.; Kansal, Ishu; Mohamed, S. H.; Ferreira, Joés M. F.

    2009-11-01

    Different thickness of polycrystalline ZnTe films have been deposited onto glass substrates at room temperature by vacuum evaporation technique. The structural characteristics studied by X-ray diffraction (XRD) showed that the films are polycrystalline and have a zinc blende (cubic) structure. The calculated microstructure parameters revealed that the crystallite size increases and microstrain decreases with increasing film thickness. The transmittance and reflectance have been measured at normal and near normal incidence, respectively, in the spectral range 400-2500 nm. For ZnTe films of different thicknesses, the dependence of absorption coefficient, α on the photon energy showed the occurrence of a direct transition with band gap energy Egopt=2.21±0.01 eV (For ZnTe films of different thicknesses) confirming the independency of deduced energy gap on film thickness. The refractive indices have been evaluated in terms of envelope method, which has been suggested by Swanepoul in the transparent region. The refractive index could be extrapolated by Cauchy dispersion relationship over the whole spectra range, which extended from 400 to 2500 nm. It was observed that the refractive index, n increased upon increasing the film thickness up to 508 nm, lying within the experimental error for further increases in film thickness.

  19. Change in Tear Film Lipid Layer Thickness, Corneal Thickness, Volume and Topography after Superficial Cauterization for Conjunctivochalasis.

    Science.gov (United States)

    Chan, Tommy C Y; Ye, Cong; Ng, Paul K F; Li, Emmy Y M; Yuen, Hunter K L; Jhanji, Vishal

    2015-07-17

    We evaluated the change in tear film lipid layer thickness, corneal thickness, volume and topography after superficial cauterization of symptomatic conjunctivochalasis. Bilateral superficial conjunctival cauterization was performed in 36 eyes of 18 patients with symptomatic conjunctivochalasis. The mean age of patients (12 males, 6 females) was 68.6 ± 10.9 years (range: 44-83 years). Preoperatively, 28 eyes (77.8%) had grade 1 conjunctivochalasis, and 8 eyes (22.2%) had grade 2 conjunctivochalasis. At 1 month postoperatively, the severity of conjunctivochalasis decreased significantly (p corneal thickness, thinnest corneal thickness and corneal volume decreased significantly postoperatively (p corneal thickness and volume were observed after surgical correction of conjunctivochalasis.

  20. Thickness-dependent dielectric properties of nanoscale Pt/(Pb,Ba)ZrO 3/BaPbO 3 capacitors

    Science.gov (United States)

    Wu, Lin-Jung; Wu, Jenn-Ming

    2007-10-01

    Lead barium zirconate (PBZ) thin films on BaPbO 3(BPO)/Pt/Ti/SiO 2/Si substrates have been prepared by rf-magnetron sputtering at 500 °C. The orientation of PBZ film changes from random to (1 1 1)-prefer oriented when the thickness increases. The grain size increases with increasing PBZ thickness. The dielectric properties are greatly suppressed when the thickness of dielectrics decreases. The dielectric constant and tunability decrease from 536% and 49.1% to 205% and 22.7%, respectively, when the thickness of PBZ decreases from 323 to 62 nm. The origins of the collapsed dielectric behavior are discussed. The variation of dielectric properties with film thickness can be interpreted by (a) antiferroelectric layer at PBZ/BPO interface, (b) dead layer at Pt/PBZ interface, and (c) grain boundary dead layers.

  1. Intrinsic flux pinning mechanisms in different thickness MgB2 films

    Directory of Open Access Journals (Sweden)

    C. Yang

    2017-03-01

    Full Text Available MgB2 films in four thickness (60 nm, 200nm, 600nm and 1μm have been fabricated by hybrid physical–chemical vapor deposition technique (HPCVD. By measuring the magnetization hysteresis loops and the resistivity, we have obtained the transport and magnetic properties of the four films. After that, the pinning mechanisms in them were discussed. Comparing the pinning behaviors in these ultrathin films, thin films and thick films, it was found that there exist different pinning types in MgB2 films of different thickness. In combination with the study of the surface morphology, cross-section and XRD results, we concluded that MgB2 films had different growth modes in different growth stages. For thin films, films grew along c axis, and grain boundaries acted as surface pinning. While for thick films, films grew along c axis at first, and then changed to a-b axis growth. As a result, the a-b axis grains acted as strong volume pinning.

  2. Preparation and study of thickness dependent electrical characteristics of zinc sulfide thin films

    Indian Academy of Sciences (India)

    A U Ubale; D K Kulkarni

    2005-02-01

    Zinc sulfide thin films have been deposited onto glass substrates by chemical bath deposition. The various deposition parameters such as volume of sulfide ion source, pH of bath, deposition time, temperature etc are optimized. Thin films of ZnS with different thicknesses of 76–332 nm were prepared by changing the deposition time from 6–20 h at 30°C temperature. The effect of film thickness on structural and electrical properties was studied. The electrical resistivity was decreased from 1.83 × 105 -cm to 0.363 × 105 -cm as film thickness decreased from 332 nm to 76 nm. The structural and activation energy studies support this decrease in the resistivity due to improvement in crystallinity of the films which would increase the charge carrier mobility and decrease in defect levels with increase in the thickness.

  3. Effect of thickness on nonlinear absorption properties of graphite oxide thin films

    Science.gov (United States)

    Sreeja, V. G.; Cheruvalathu, Ajina; Reshmi, R.; Anila, E. I.; Thomas, Sheenu; Jayaraj, M. K.

    2016-10-01

    We report the thickness dependent structural, linear and nonlinear optical properties of graphite oxide (GO) thin films synthesized by spin coating method. We observed that the structural, linear and nonlinear optical properties can be tuned by the film thickness in GO. The nonlinear absorption studies by open aperture z scan technique exhibited a saturable absorption. The nonlinear absorption coefficient and saturation intensity varies with film thickness which is attributed to increased localized defect states in the energy band gap. Our results emphasize relatively large thickness dependent optical nonlinearity of GO thin films and its potential for optical pulse generation, exploring the way to GO based nonlinear applications in Q switched mode locking laser systems. All the coated GO films were characterized by X-Ray diffraction method (XRD), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, UV-Vis absorption spectroscopy (UV-Vis), Photoluminescence (PL) and Scanning electron microscope (SEM) measurements.

  4. Studies on gas sensing performance of pure and modified barium strontium titanate thick film resistors

    Indian Academy of Sciences (India)

    G H Jain; L A Patil; P P Patil; U P Mulik; K R Patil

    2007-02-01

    Barium strontium titanate ((Ba0.87Sr0.13)TiO3–BST) ceramic powder was prepared by mechanochemical process. The thick films of different thicknesses of BST were prepared by screen-printing technique and gas-sensing performance of these films was tested for various gases. The films showed highest response and selectivity to ammonia gas. The effect of film thickness on gas response was also studied. As prepared BST thick films were surface modified by dipping them into an aqueous solution of titanium chloride (TiCl3) for different intervals of time. Surface modification shifted response to H2S gas suppressing the responses to ammonia and other gases. The surface modification, using dipping process, altered the adsorbate–adsorbent interactions, which gave the unusual sensitivity and selectivity effect. Sensitivity, selectivity, thermal stability, response and recovery time of the sensor were measured and presented.

  5. Correlation of Gear Surface Fatigue Lives to Lambda Ratio (Specific Film Thickness)

    Science.gov (United States)

    Krantz, Timothy Lewis

    2013-01-01

    The effect of the lubrication regime on gear performance has been recognized, qualitatively, for decades. Often the lubrication regime is characterized by the specific film thickness being the ratio of lubricant film thickness to the composite surface roughness. Three studies done at NASA to investigate gearing pitting life are revisited in this work. All tests were done at a common load. In one study, ground gears were tested using a variety of lubricants that included a range of viscosities, and therefore the gears operated with differing film thicknesses. In a second and third study, the performance of gears with ground teeth and superfinished teeth were assessed. Thicker oil films provided longer lives as did improved surface finish. These datasets were combined into a common dataset using the concept of specific film thickness. This unique dataset of more 258 tests provides gear designers with some qualitative information to make gear design decisions.

  6. The preparation, processing and properties of thin and thick films for microelectric applications

    Science.gov (United States)

    Bagley, B. G.; Greene, L. H.; Barboux, P.; Tarascon, J. M.; Venkatesan, T.

    High-Tc thin and thick films of YBa2Cu2O(7-y) and thick films based on the Bi-Sr-Ca-Cu and Tl-Ba-Ca-Cu systems were prepared and their properties investigated. It was found that YB2Cu3O(7-y) thin films prepared at temperatures up to 400 C, have amorphous structures, and those prepared in the 400-650 C region exhibit polyphase microstructure, due to the rapid crystallization kinetics of the competing phases. Methods for bipassing the 'forbidden' temperature region are described. Preparation of YBa2Cu2O(7-y) thick films was achieved via an aqueous sol-gel technique. Bi-Sr-Ca-Cu- and Tl-Ba-Ca-Cu-based thick films were prepared via the decomposition of glycerol-based solutions containing nitrates of the elements.

  7. Influence of Thickness on Ethanol Sensing Characteristics of Doctor-bladed Thick Film from Flame-made ZnO Nanoparticles

    Directory of Open Access Journals (Sweden)

    Sukon Phanichphant

    2007-02-01

    Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis (FSP using zincnaphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particleproperties were analyzed by XRD, BET, and HR-TEM. The sensing films were produced bymixing the particles into an organic paste composed of terpineol and ethyl cellulose as avehicle binder and were fabricated by doctor-blade technique with various thicknesses (5,10, 15 μm. The morphology of the sensing films was analyzed by SEM and EDS analyses.The gas sensing characteristics to ethanol (25-250 ppm were evaluated as a function of filmthickness at 400°C in dry air. The relationship between thickness and ethanol sensingcharacteristics of ZnO thick film on Al2O3 substrate interdigitated with Au electrodes wereinvestigated. The effects of film thickness, as well as the cracking phenomenon, though,many cracks were observed for thicker sensing films. Crack widths increased withincreasing film thickness. The film thickness, cracking and ethanol concentration havesignificant effect on the sensing characteristics. The sensing characteristics with variousthicknesses were compared, showing the tendency of the sensitivity to ethanol decreasedwith increasing film thickness and response time. The relationship between gas sensingproperties and film thickness was discussed on the basis of diffusively and reactivity of thegases inside the oxide films. The thinnest sensing film (5 μm showed the highest sensitivityand the fastest response time (within seconds.

  8. Non-contacting Measurement of Oil Film Thickness Between Loaded Metallic Gear Teeth

    Science.gov (United States)

    Cox, Daniel B.; Ceccio, Steven L.; Dowling, David R.

    2013-11-01

    The mechanical power transmission efficiency of gears is depends on the lubrication condition between gear teeth. While the lubrication levels can be generally predicted, an effective in-situ non-contacting measurement of oil film thicknesses between loaded metallic gear teeth has proved elusive. This study explores a novel oil film thickness measurement technique based on optical fluence, the light energy transmitted between loaded gear teeth. A gear testing apparatus that allowed independent control of gear rotation rate, load torque, and oil flow was designed and built. Film thickness measurements made with 5-inch-pitch-diameter 60-tooth spur gears ranged from 0.3 to 10.2 mil. These results are compared with film thickness measurements made in an earlier investigation (MacConochie and Cameron, 1960), as well as with predictions from two film thickness models: a simple two-dimensional squeezed oil film and the industry-accepted model as described by the American Gear Manufacturers Association (AGMA 925, 2003). In each case, the measured film thicknesses were larger than the predicted thicknesses, though these discrepancies might be attributed to the specifics the experiments and to challenges associated with calibrating the fluence measurements. [Sponsored by General Electric].

  9. Effect of Nanotube Film Thickness on the Performance of Nanotube-Silicon Hybrid Solar Cells

    Science.gov (United States)

    Tune, Daniel D.; Shapter, Joseph G.

    2013-01-01

    The results of measurements on solar cells made from randomly aligned thin films of single walled carbon nanotubes (SWCNTs) on n-type monocrystalline silicon are presented. The films are made by vacuum filtration from aqueous TritonX-100 suspensions of large diameter arc-discharge SWCNTs. The dependence of the solar cell performance on the thickness of the SWCNT film is shown in detail, as is the variation in performance due to doping of the SWCNT film with SOCl2.

  10. Field electron emission from undoped, continuous, submicron-thick diamond films

    Science.gov (United States)

    Ternyak, O.; Akhvlediani, R.; Hoffman, A.; Wong, W. K.; Lee, S. T.; Lifshitz, Y.; Daren, S.; Cheifetz, E.

    2005-12-01

    The present work shows that the field electron emission (FEE) properties of polycrystalline diamond films can be enhanced by control over the film thickness. The FEE properties of undoped, continuous, and smooth submicron-thick diamond films with initial nucleation densities of ˜5×1010particles/cm2 were investigated as a function of diamond film thickness. A set of films with thickness ranging from 70-100to830nm yielded turn-on field values of 6-8V/μm and threshold field values of 8.5-17.5V/μm (for 0.3μA/cm2), respectively, without any conditioning. It was found that the films of thickness up to ˜370nm can sustain stable current density as high as 0.1A/cm2 without morphological modification. The thicker films, however, suffer from a strong degradation of the film and breakdown. The best FEE (lower turn-on and threshold fields and morphological stability) was obtained for a thin (100nm) continuous diamond film. This result is suggested to be attributed mainly to the efficient electron conduction from the back contact to the surface.

  11. Effect of Thickness of Single-Phase Antimony and Tellurium Thin Films on Their Thermal Conductivities.

    Science.gov (United States)

    Park, No-Won; Park, Sang-In; Lee, Sang-Kwon

    2015-09-01

    We present the effects of film thickness and grain size on the out-of-plane thermal conductivities of single-phase Sb and Te thin films, which are of great interest for thermoelectric device applications. The thermal conductivities of the films were measured by the four-point-probe 3Ωo method, at room temperature. For this study, 50-, 100-, and 200-nm-thick Sb and Te thin films were prepared by electron-beam evaporation at room temperature. From the measured thermal conductivities, we evaluated that the average thermal conductivities of the Sb and Te thin films were 5.9-10.2 W/(m x K) and 0.8-1.2 W/(m x K), respectively, at room temperature. This result reveals that the thickness and grain size of each thin film strongly affect the modulation of its thermal conductivity at room temperature.

  12. Evaluation of feasibility of measuring EHD film thickness associated with cryogenic fluids

    Science.gov (United States)

    Kannel, J. W.; Merriman, T. L.; Stockwell, R. D.; Dufrane, K. F.

    1983-08-01

    The feasibility of measuring elastohydrodynamic (EHD) films as formed with a cryogenic (LN2) fluid is evaluated. Modifications were made to an existing twin disk EHD apparatus to allow for disk lubrication with liquid nitrogen. This disk apparatus is equipped with an X-ray system for measuring the thickness of any lubricant film that is formed between the disks. Several film thickness experiments were conducted with the apparatus which indicate that good lubrication films are filmed with LN2. In addition to the film thickness studies, failure analyses of three bearings were conducted. The HPOTP turbine end bearings had experienced axial loads of 36,000 to 44,000 N (8,000 to 10,000 lb). High continuous radial loads were also experienced, which were most likely caused by thermal growth of the inner race. The resulting high internal loads caused race spalling and ball wear to occur.

  13. Ultrasonic oil-film thickness measurement: An angular spectrum approach to assess performance limits

    OpenAIRE

    Zhang, J.; Drinkwater, B.W.; Dwyer-Joyce, R.S.

    2007-01-01

    The performance of ultrasonic oil-film thickness measurement in a ball bearing is quantified. A range of different viscosity oils (Shell T68, VG15, and VG5) are used to explore the lowest reflection coefficient and hence the thinnest oil-film thickness that the system can measure. The results show a minimum reflection coefficient of 0.07 for both oil VG15 and VG5 and 0.09 for oil T68 at 50 MHz. This corresponds to an oil-film thickness of 0.4 μm for T68 oil. An angular spectrum (or Fourier d...

  14. Abnormal Cutoff Thickness of Long-Range Surface Plasmon Polariton Modes Guided by Thin Metal Films

    Institute of Scientific and Technical Information of China (English)

    LIU Fang; RAO Yi; HUANG Yi-Dong; ZHANG Wei; PENG Jiang-De

    2007-01-01

    Long-range surface plasmon polariton(LRSPP) modes guided by a thin metal film surrounded by semi-infinite dielectrics with different refractive indices are studied.Our cMculation results show that the cutoff thickness of the metal film does not monotonically increase with refractive index difference △n between the SHbstrate and superstrate.Just because of this abnormal behaviour of cutoff thickness,the existence of LRSPP illustrates complicated situations in asymmetric configurations.For a certain metal film thickness,LRsPP may exist in one.two or three refractive index difference △n regions.

  15. Ptychographic Imaging of Branched Colloidal Nanocrystals Embedded in Free-Standing Thick Polystyrene Films

    Science.gov (United States)

    de Caro, Liberato; Altamura, Davide; Arciniegas, Milena; Siliqi, Dritan; Kim, Mee R.; Sibillano, Teresa; Manna, Liberato; Giannini, Cinzia

    2016-01-01

    Research on composite materials is facing, among others, the challenging task of incorporating nanocrystals, and their superstructures, in polymer matrices. Electron microscopy can typically image nanometre-scale structures embedded in thin polymer films, but not in films that are micron size thick. Here, X-ray Ptychography was used to visualize, with a resolution of a few tens of nanometers, how CdSe/CdS octapod-shaped nanocrystals self-assemble in polystyrene films of 24 ± 4 μm, providing a unique means for non-destructive investigation of nanoparticles distribution and organization in thick polymer films.

  16. Phase thickness approach for determination of thin film refractive index dispersion from transmittance spectra

    Science.gov (United States)

    Nenkov, M. R.; Pencheva, T. G.

    2008-06-01

    A novel approach for determination of refractive index dispersion n(λ ) and thickness d of thin films of negligible absorption and weak dispersion is proposed. The calculation procedure is based on determination of the phase thickness of the film in the spectral region of measured transmittance data. All points of measured spectra are included in the calculations. Barium titanate and titanium oxide thin films are investigated and their n(λ ) and d are calculated. The approach is validated using Swanepoel's method and it is found to be applicable for relatively thinner films when measured transmittance spectra have one minimum and one maximum only.

  17. Thickness measurement of organic films using Compton scattering of characteristic X-rays

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jong-Yun, E-mail: kjy@kaeri.re.kr [Nuclear Chemistry Research Division, Korea Atomic Energy Research Institute, Daedeok-daero 1045, Dukjin-dong Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Choi, Yong Suk; Park, Yong Joon; Song, Kyuseok [Nuclear Chemistry Research Division, Korea Atomic Energy Research Institute, Daedeok-daero 1045, Dukjin-dong Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Jung, Sung-Hee [Division of Radioisotope R and D, Korea Atomic Energy Research Institute, Daedeok-daero 1045, Dukjin-dong Yuseong-gu, Daejeon 305-353 (Korea, Republic of); Hussein, Esam M.A. [Laboratory for Threat Materials Detection, Department of Mechanical Engineering, University of New Brunswick, Fredericton, New Brunswick, Canada E3B 5A3 (Canada)

    2011-09-15

    An X-ray scattering method is presented for determining the thickness of an organic film placed on a steel substrate. The strong peaks of characteristic X-rays are taken as an advantage to measure the intensity of backscattered photons. It is shown that the intensity of Compton scattering of characteristic X-rays is proportional to film thickness, up to the thickness of 250 {mu}m of acrylic adhesive layers. In addition, the measurement time was 300 ms, providing a simple and convenient method for on-line for thickness monitoring.

  18. Systematic experimental study of pure shear type dielectric elastomer membranes with different electrode and film thicknesses

    Science.gov (United States)

    Hodgins, M.; Seelecke, S.

    2016-09-01

    An approach to reduce the voltage required for dielectric elastomer actuators is to reduce film thickness. However, if the electrode thickness is not similarly reduced, the electrode’s mechanical behavior can increasingly and negatively impact the overall actuator behavior. This effect is yet to be studied and quantified for pure shear type specimens; a type recommended in a recent DE standardization journal publication. Therefore, in this work, using pure shear specimens, a comparative study of membrane actuators of different film thickness (20, 50 and 100 μm) is performed. Electrodes of different thicknesses are screen printed and tested in a uniaxial test device. The stiffening effect due to the solid-state electrodes is demonstrated by performing force-elongation tests for specimens with and without electrodes. Additionally the importance of thin electrodes (relative to film thickness) was demonstrated through a number of electromechanical tests. Isotonic tests revealed a lower electro-mechanical sensitivity for the 20 μm film when compared with the 50 and 100 μm films. This was attributed to the relatively thick electrodes. Best actuation results were achieved when the total electrode thickness was at least 15x thinner than the dielectric membrane thickness.

  19. Thickness dependent ferromagnetism in thermally decomposed NiO thin films

    Science.gov (United States)

    Ravikumar, Patta; Kisan, Bhagaban; Perumal, Alagarsamy

    2016-11-01

    We report the effects of film thickness, annealing temperature and annealing environments on thermal decomposition behavior and resulting magnetic properties of NiO (t=50-300 nm) thin films. All the NiO films were prepared directly on thermally oxidized Si at ambient temperature using magnetron sputtering technique and post annealed at different temperatures (TA) under vacuum and oxygen atmospheres. As-deposited films exhibit face centered cubic structure with large lattice constant due to strain induced during sputtering process. With increasing TA, the lattice constant decreases due to the release of strain and thickness dependent thermal decomposition reaction of NiO into Ni has been observed for the NiO films annealed at 500 °C under vacuum condition. As a result, the antiferromagnetic nature of the as-deposited NiO films transforms into ferromagnetic one with dominant thickness dependent ferromagnetic behavior at room temperature. In addition, the existence of both Ni and NiO phases in the annealed NiO films shows noticeable exchange bias under field cooling condition. The behavior of thermal decomposition was not observed for the NiO films annealed under oxygen condition which results in no detectable change in the magnetic properties. The observed results are discussed on the basis of thickness dependent thermal decomposition in NiO films with increasing TA and changing annealing conditions.

  20. Thickness dependence of Jc (0) in MgB2 films

    Science.gov (United States)

    Chen, Yiling; Yang, Can; Jia, Chunyan; Feng, Qingrong; Gan, Zizhao

    2016-06-01

    MgB2 superconducting films, whose thicknesses range from 10 nm to 8 μm, have been fabricated on SiC substrates by hybrid physical-chemical vapor deposition (HPCVD) method. It is the first time that the Tc and the Jc of MgB2 films are studied on such a large scale. It is found that with the increasing of thickness, Tc elevates first and then keeps roughly stable except for some slight fluctuations, while Jc (5 K, 0 T) experiences a sharp increase followed by a relatively slow fall. The maximum Jc (5 K, 0 T) = 2.3 × 108 A cm-2 is obtained for 100 nm films, which is the experimental evidence for preparing high-quality MgB2 films by HPCVD method. Thus, this work may provide guidance on choosing the suitable thickness for applications. Meanwhile, the films prepared by us cover ultrathin films, thin films and thick films, so the study on them will bring a comprehensive understanding of MgB2 films.

  1. Amorphous Indium Selenide Thin Films Prepared by RF Sputtering: Thickness-Induced Characteristics.

    Science.gov (United States)

    Han, Myoung Yoo; Park, Yong Seob; Kim, Nam-Hoon

    2016-05-01

    The influence of indium composition, controlled by changing the film thickness, on the optical and electrical properties of amorphous indium selenide thin films was studied for the application of these materials as Cd-free buffer layers in CI(G)S solar cells. Indium selenide thin films were prepared using RF magnetron sputtering method. The indium composition of the amorphous indium selenide thin films was varied from 94.56 to 49.72 at% by increasing the film thickness from 30 to 70 nm. With a decrease in film thickness, the optical transmittance increased from 87.63% to 96.03% and Eg decreased from 3.048 to 2.875 eV. Carrier concentration and resistivity showed excellent values of ≥1015 cm(-3) and ≤ 10(4) Ω x cm, respectively. The conductivity type of the amorphous indium selenide thin films could be controlled by changing the film-thickness-induced amount of In. These results indicate the possibility of tuning the properties of amorphous indium selenide thin films by changing their composition for use as an alternate buffer layer material in CI(G)S solar cells.

  2. Thickness dependence of temperature coefficient of resistivity of polycrystalline bismuth films

    Science.gov (United States)

    Kumar, Ajay; Katyal, O. P.

    1991-04-01

    Results for the temperature coefficient of resistivity (TCR) of polycrystalline bismuth films deposited on to glass substrate are reported for the thickness range 30 300 nm. The film TCR is found to be negative for all thicknesses studied and its absolute value exhibits a maximum of 3.70×10-3 K-1 near 72.5 nm. The variation of charge carrier density with film thickness has been estimated from the presence of surface states. To include the thickness dependence of charge carrier density, a modified theory has been used to explain the observed behaviour of the TCR. The experimental results for the TCR of Bi films are found to be consistent with the theoretical values. The existence of the extremum is theoretically verified. From the analysis, the specularity parameter p is about 0.44 and the reflection coefficient R is 0.1.

  3. Determination of Thickness of an Inaccessible Thin Film under a Multilayered System from Natural Frequencies

    Institute of Scientific and Technical Information of China (English)

    ZHOU Chang-Zhi; LI Ming-Xuan; MAO Jie; WANG Xiao-Min

    2008-01-01

    @@ We investigate the relationship between natural frequencies of a multilayered system of different elastic materials and the thickness of the undermost thin film. The natural frequencies are numerically calculated from the reflection coefficient of a sample system of "steel-epoxy resin-aluminium-thin polymer' with normal incidence.Strain energy ratio is defined and calculated to give the physics explanation why some frequencies are sensitive to thickness of the thin film in certain range. Experiments of three specimens indicate that the measured natural frequencies agree well with the theoretical ones. It is found in our experiments that the ratio of the lowest film thickness to wavelength is about 1/5. The average relative errors for the inverted polymer film thicknesses are found to be 11.8%, -4.8% and -1.3%, respectively.

  4. FABRICATION AND PROPERTIES OF ANTIFERROELECTRIC RAINBOW ACTUATOR

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    A new type of large-displacement actuator called reduced and internally biased oxide wafer (RAINBOW) is fabricated by chemical reduction of Pb(Sn, Zr, Ti)O3(PSZT) antiferroelectric ceramics and its properties are investigated. It is found that PSZT is easily reduced and the optimal conditions for producing RAINBOW samples are determined to be 870 ℃ for 2~3 h. The antiferroelectricsferroelectrics phase transitions occur at lower field strength in RAINBOW actuators compared with normal PSZT actuators. Large axial displacements are also obtained from the RAINBOW actuator by application of electric fields exceeding the phase switching level. However, the field-induced displacement of the RAINBOW actuator is dependent on the manner of applying load on the samples.

  5. Structural, transport and microwave properties of 123/sapphire films: Thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

    1994-12-31

    The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

  6. Thickness Influence on In Vitro Biocompatibility of Titanium Nitride Thin Films Synthesized by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Liviu Duta

    2016-01-01

    Full Text Available We report a study on the biocompatibility vs. thickness in the case of titanium nitride (TiN films synthesized on 410 medical grade stainless steel substrates by pulsed laser deposition. The films were grown in a nitrogen atmosphere, and their in vitro cytotoxicity was assessed according to ISO 10993-5 [1]. Extensive physical-chemical analyses have been carried out on the deposited structures with various thicknesses in order to explain the differences in biological behavior: profilometry, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS, X-ray diffraction and surface energy measurements. XPS revealed the presence of titanium oxynitride beside TiN in amounts that vary with the film thickness. The cytocompatibility of films seems to be influenced by their TiN surface content. The thinner films seem to be more suitable for medical applications, due to the combined high values of bonding strength and superior cytocompatibility.

  7. Influence of film thickness and In-doping on physical properties of CdS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Butt, Sajid, E-mail: sajidarif@hotmail.com [Department of Materials Science and Engineering, Institute of Space Technology (IST), Islamabad 44000 (Pakistan); Thermal Transport Laboratory, School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad (Pakistan); Shah, Nazar Abbas [Department of Physics, COMSATS Institute of Information Technology, Islamabad (Pakistan); Nazir, Adnan [Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova (Italy); Ali, Zulfiqar [Optics Laboratories, P. O. Box 1021, Islamabad (Pakistan); Maqsood, Asghri [CESET, Center for Emerging Sciences, Engineering and Technology, Islamabad (Pakistan)

    2014-02-25

    Highlights: • Fabrication of polycrystalline CdS thin films by Close Spaced Sublimation technique. • The direct band gap of 2.44 eV and the electrical resistivity in the order of 10{sup 6}–10{sup 8} Ω cm was measured. • Resistivity was reduced to the order of 10{sup –2}–10{sup 1} Ω m by the thermally diffusion of indium into CdS films. -- Abstract: Polycrystalline CdS thin films were deposited on glass substrates by close spaced sublimation technique. Samples of various thicknesses, ranging from 250 to 940 nm were obtained. The optical and electrical properties of pure CdS thin films were studied as a function of film thickness. The resistivity of as-deposited CdS films was in the order of 10{sup 6}–10{sup 8} Ω cm, depending upon the film thickness. In the high temperature region, carriers are transported over the grain boundaries by thermionic emission. Resistivity was reduced to the order of 10{sup −2}–10{sup 1} Ω cm by the thermally diffusion of indium into CdS films, without changing the type of carriers. The annealing temperature dependence of structural, optical and electrical properties of In-doped CdS films showed that the samples annealed at 350 °C and 400 °C exhibited better results.

  8. Investigation of thickness effects on the dielectric constant barium strontium titanate thin films

    CERN Document Server

    Grattan, L J

    2002-01-01

    The collapse in dielectric constant at small thickness commonly observed in ferroelectric thin films was measured and investigated in barium strontium titanate (Ba sub 0 sub . sub 5 Sr sub 0 sub . sub 5 TiO sub 3). The possible mechanisms responsible for this effect are reviewed. Functional measurements were performed on BST thin films, of 7.5 to 950 nm, by incorporating them into capacitor structures with bottom electrodes of strontium ruthenate (SRO) and thermally- evaporated Au top electrodes. A discussion on thin film growth considerations, optimal PLD conditions and the measurement techniques employed in the project is presented. The experimentally determined dielectric constant - thickness profile was fitted using the series capacitor model assuming low dielectric constant interfacial layers in series with the bulk. Consideration of the case where the combined 'dead layer' thickness was close to the total BST thickness revealed that, for this system, the total 'dead layer' thickness had to be less than ...

  9. Photometric method of determining gold film thickness of nuclear radiation silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Nikitin, B.A.; Zakharchuk, D.V.; Kovalev, I.I.; Nikolaeva, T.V.; Serushkina, E.S.

    1987-07-01

    The authors examine a photometric method of assessing a nuclear radiation silicon detector's gold film thickness based on the photocurrent from a light passed through the sputtered metal layer. The surface-barrier detectors of nuclear radiations with a gold front contact are characterized by a high sensitivity to light in the 0.4-1.0 micrometer wavelength band. The relative error of determining the gold film thickness using the method examined here is of the 7% order.

  10. Effects of chromophore concentration and film thickness on thermo-optic properties of electro-optic fluorinated polyimide films

    Institute of Scientific and Technical Information of China (English)

    Hongxiang Song; Chengxun Wu

    2007-01-01

    Electro-optic (EO) effect and thermo-optic (TO) effect are jointly considered on the basis of field-induced and temperature-affected perturbations of the operating point in waveguide components. TO coefficients of EO fluorinated polyimide films with side-chain azobenzene chromophore were measured by attenuatedtotal-reflection (ATR) technique at different temperatures with TE- and TM-polarized lights, respectively.It is found that the absolute values of TO coefficients increase with the increments of both chromophore concentration and film thickness, but the polarization dependence of TO coefficients increases with the increment of chromophore concentration and decreases with the increment of film thickness.

  11. Thickness Effect on Properties of Sprayed In2S3 Films for Photovoltaic Applications

    Science.gov (United States)

    Bouguila, N.; Kraini, M.; Halidou, I.; Lacaze, E.; Bouchriha, H.; Bouzouita, H.

    2016-01-01

    Indium sulfide (In2S3) films have been deposited on soda-lime glass substrates using a spray technique (CSP). Indium chloride and thiourea were used as precursors at a molar ratio of S:In = 2. The substrate temperature was fixed at 340°C. The effect of film thickness on the structural, morphological and optical properties of the as-deposited films has been studied. These films were characterized by x-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM) and optical absorption spectroscopy. As-prepared samples were polycrystalline with a cubic structure and (400) as preferential orientation. Their grain size increased from 35 nm to 41 nm with increasing thickness whereas the dislocation density and microstrain of the films decreased with the increase of thickness. Both SEM and AFM images showed that the films were homogenous with an increase of the surface roughness with the increase of thickness. The optical transmittance of the films decreased from 80% to 20% in the visible and infrared regions when the thickness was increased from 0.78 μm to 6.09 μm. The optical band gap E g was found to be in the range of 2.75-2.19 eV and showed a decrease with film thickness. Based on the measured optical constants (n and k), a Wemple-Didomenico model was used to determine the values of single oscillator energy ( E 0), dispersion energy ( E d), optical band gap ( E g) and high frequency dielectric constant ( \\varepsilon_{∞} ). In addition, these films exhibited n-type conductivity and were highly resistive. These results confirm that In2S3 thin films are a promising alternative as a buffer-layer material for CuInGa(S,Se)2-based solar cells.

  12. Thickness dependence of magnetic properties in La–Co substituted strontium hexaferrite films with perpendicular anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Hui, Yajuan [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Cheng, Weiming, E-mail: wmcheng@mail.hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Yan, Peng [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Chen, Jincai [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Miao, Xiangshui [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-09-15

    The thickness dependence of magnetization reversal and coercivity behavior for La–Co substituted strontium hexaferrite (Sr-M) films was investigated. It is found that perpendicular anisotropy appears only when film thickness (t) is above 110 nm. With increasing t, perpendicular anisotropy energy (K{sub u⊥}) increases gradually to its maximum of 1.76×10{sup 6} erg/cm{sup 3} at t=300 nm, but turns to decrease when t>300 nm. Moreover, when t>110 nm, those films exhibit domains pinning or Stoner–Wohlfarth reversal model, present large K{sub u⊥} values and a rapid increase in H{sub c⊥}. However, while t≤110 nm, Sr-M films show nucleation model of magnetization reversal and perform low coercivity. The origin of the coercivity varying with thickness should be correlated with the grain size and preferred orientations in Sr-M films. - Highlights: • Thickness dependence in submicro-scale bulk system is investigated for La–Sr–Co–Fe–O films. • (0 0 1) preferred orientation gradually increases until t=300 nm and then declines. • The magnetization reversal presents different models with thickness. • Perpendicular anisotropy energy increases to maximum value of 1.76×10{sup 6} erg/cm{sup 3} at t=300 nm. • The coercivity varying with thickness is correlated with the grain size and preferred orientation.

  13. Temperature- and thickness-dependent elastic moduli of polymer thin films

    Directory of Open Access Journals (Sweden)

    Ao Zhimin

    2011-01-01

    Full Text Available Abstract The mechanical properties of polymer ultrathin films are usually different from those of their counterparts in bulk. Understanding the effect of thickness on the mechanical properties of these films is crucial for their applications. However, it is a great challenge to measure their elastic modulus experimentally with in situ heating. In this study, a thermodynamic model for temperature- (T and thickness (h-dependent elastic moduli of polymer thin films Ef(T,h is developed with verification by the reported experimental data on polystyrene (PS thin films. For the PS thin films on a passivated substrate, Ef(T,h decreases with the decreasing film thickness, when h is less than 60 nm at ambient temperature. However, the onset thickness (h*, at which thickness Ef(T,h deviates from the bulk value, can be modulated by T. h* becomes larger at higher T because of the depression of the quenching depth, which determines the thickness of the surface layer δ.

  14. Thickness and microstructure effects in the optical and electrical properties of silver thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel; Le, Minh [Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 (United States)

    2015-11-15

    The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

  15. Magnetic properties of permalloy films with different thicknesses deposited onto obliquely sputtered Cu underlayers

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xiaoyu; Sun, Xiaojun; Wang, Jianbo; Liu, Qingfang, E-mail: liuqf@lzu.edu.cn

    2015-03-01

    In this work, the influence of obliquely sputtered Cu underlayer of 10 nm on the magnetic properties of normally sputtered Permalloy thin films with different thicknesses from 10 nm to 150 nm has been investigated. It has been found that the samples with the Permalloy layer thickness ranging from 10 nm to 70 nm exhibit a good in-plane uniaxial magnetic anisotropy, and the increase of the film thickness leads to a decrease of the anisotropy field and the natural resonance frequency. The critical Permalloy layer thickness for stripe domain initiation of these films is about 80 nm, which is thinner than that of obliquely sputtered Permalloy thin films without an underlayer. The characteristic shapes of hysteresis loops which can be called ''transcritical'' are observed above the critical thickness. The condition and mechanism of appearing stripe domain structure were discussed and it has been found that the frequency response of permeability of the anisotropic films shows the characteristics of multi-peak resonance. - Highlights: • Py films were fabricated on obliquely sputtered Cu underlayers by RF magnetron sputtering. • Effects of Py layer thickness on anisotropy, ferromagnetic resonance frequency have been studied. • Samples with Py layer (<70 nm) show a good in-plane uniaxial magnetic anisotropy. • Samples with Py layer (>80 nm) show stripe domains and multi-peaks in permeability spectra.

  16. Study of lead free ferroelectrics using overlay technique on thick film microstrip ring resonator

    Directory of Open Access Journals (Sweden)

    Shridhar N. Mathad

    2016-03-01

    Full Text Available The lead free ferroelectrics, strontium barium niobates, were synthesized via the low cost solid state reaction method and their fritless thick films were fabricated by screen printing technique on alumina substrate. The X band response (complex permittivity at very high frequencies of Ag thick film microstrip ring resonator perturbed with strontium barium niobates (SrxBa1-xNb2O6 in form of bulk and thick film was measured. A new approach for determination of complex permittivity (ε′ and ε′′ in the frequency range 8–12 GHz, using perturbation of Ag thick film microstrip ring resonator (MSRR, was applied for both bulk and thick film of strontium barium niobates (SrxBa1-xNb2O6. The microwave conductivity of the bulk and thick film lie in the range from 1.779 S/cm to 2.874 S/cm and 1.364 S/cm to 2.296 S/cm, respectively. The penetration depth of microwave in strontium barium niobates is also reported.

  17. Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

    Directory of Open Access Journals (Sweden)

    Gunter Hagen

    2011-08-01

    Full Text Available Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers.

  18. Hydrophobic switching nature of methylcellulose ultra-thin films: thickness and annealing effects

    Energy Technology Data Exchange (ETDEWEB)

    Innis-Samson, Vallerie Ann; Sakurai, Kenji, E-mail: sakurai@yuhgiri.nims.go.jp [University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8577 (Japan)

    2011-11-02

    We have studied the thermosensitive property of methylcellulose (MC) thin films supported on Si substrate by static sessile drop contact angle measurements, and their surface properties and thin film structure by x-ray reflectivity (XRR) and atomic force microscopy (AFM) techniques. From the static sessile drop contact angle measurements, the MC thin films showed the characteristic hydrophilic-to-hydrophobic transition at {approx}70 {sup 0}C, which is the lower critical solution temperature of the bulk solution volume phase separation transition. For films with thickness d {<=} R{sub g}, the onset of such a transition is affected by the film thickness while very thick films, d >> R{sub g}, yielded higher contact angles. Annealing the MC thin films with thicknesses {approx}200 A (near the radius of gyration, R{sub g}, of the polymer) below the bulk glass transition temperature (T{sub g} {approx} 195 deg. C) would not change the hydrophobic switch nature of the film but annealing 'at' and above the bulk T{sub g} would change its surface property. From surface topography images by AFM, there were no significant changes in either the roughness or the film texture before and after annealing. With XRR data, we were able to determine that such changes in the surface properties are highly correlated to the film thickness changes after the annealing process. This study, we believe, is the first to examine the thermal annealing affects on the thermal response function of a thermoresponsive polymer and is important for researching how to tailor the hydrophobic switching property of MC thin films for future sensing applications. (paper)

  19. Hydrophobic switching nature of methylcellulose ultra-thin films: thickness and annealing effects.

    Science.gov (United States)

    Innis-Samson, Vallerie Ann; Sakurai, Kenji

    2011-11-02

    We have studied the thermosensitive property of methylcellulose (MC) thin films supported on Si substrate by static sessile drop contact angle measurements, and their surface properties and thin film structure by x-ray reflectivity (XRR) and atomic force microscopy (AFM) techniques. From the static sessile drop contact angle measurements, the MC thin films showed the characteristic hydrophilic-to-hydrophobic transition at ∼70 °C, which is the lower critical solution temperature of the bulk solution volume phase separation transition. For films with thickness d ≤ R(g), the onset of such a transition is affected by the film thickness while very thick films, d ≫ R(g), yielded higher contact angles. Annealing the MC thin films with thicknesses ∼200 Å (near the radius of gyration, R(g), of the polymer) below the bulk glass transition temperature (T(g) ∼ 195 ° C) would not change the hydrophobic switch nature of the film but annealing 'at' and above the bulk T(g) would change its surface property. From surface topography images by AFM, there were no significant changes in either the roughness or the film texture before and after annealing. With XRR data, we were able to determine that such changes in the surface properties are highly correlated to the film thickness changes after the annealing process. This study, we believe, is the first to examine the thermal annealing affects on the thermal response function of a thermoresponsive polymer and is important for researching how to tailor the hydrophobic switching property of MC thin films for future sensing applications.

  20. Hydrophobic switching nature of methylcellulose ultra-thin films: thickness and annealing effects

    Science.gov (United States)

    Innis-Samson, Vallerie Ann; Sakurai, Kenji

    2011-11-01

    We have studied the thermosensitive property of methylcellulose (MC) thin films supported on Si substrate by static sessile drop contact angle measurements, and their surface properties and thin film structure by x-ray reflectivity (XRR) and atomic force microscopy (AFM) techniques. From the static sessile drop contact angle measurements, the MC thin films showed the characteristic hydrophilic-to-hydrophobic transition at ˜70 °C, which is the lower critical solution temperature of the bulk solution volume phase separation transition. For films with thickness d ≤ Rg, the onset of such a transition is affected by the film thickness while very thick films, d ≫ Rg, yielded higher contact angles. Annealing the MC thin films with thicknesses ˜200 Å (near the radius of gyration, Rg, of the polymer) below the bulk glass transition temperature (Tg ˜ 195 ° C) would not change the hydrophobic switch nature of the film but annealing ‘at’ and above the bulk Tg would change its surface property. From surface topography images by AFM, there were no significant changes in either the roughness or the film texture before and after annealing. With XRR data, we were able to determine that such changes in the surface properties are highly correlated to the film thickness changes after the annealing process. This study, we believe, is the first to examine the thermal annealing affects on the thermal response function of a thermoresponsive polymer and is important for researching how to tailor the hydrophobic switching property of MC thin films for future sensing applications.

  1. Gas sensing properties of Cu and Cr activated BST thick films

    Indian Academy of Sciences (India)

    G H Jain; L A Patil

    2006-08-01

    H2S gas sensing properties of BST ((Ba0.67Sr0.33)TiO3) thick films are reported here for the first time. BST ceramic powder was prepared by mechanochemical process. Thick films of BST were prepared by screen-printing technique. The sensing performance of the films was tested for various gases. The films were surface customized by dipping them into aqueous solutions of CuCl2 and CrO3 for various intervals of time. These surface modified BST films showed improved sensitivity to H2S gas (100 ppm) than pure BST film. Chromium oxide was observed to be a better activator than copper oxide in H2S gas sensing. The effect of microstructure and amount of activators on H2S gas sensing were discussed. The sensitivity, selectivity, stability, response and recovery time of the sensor were measured and presented.

  2. Investigation of Top/bottom Electrode and Diffusion Barrier Layer for PZT thick film MEMS Sensors

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Hindrichsen, Christian Carstensen; Lou-Møller, R.;

    2007-01-01

    In this work screen printed piezoelectric Ferroperm PZ26 lead zirconate titanate (PZT) thick film is used for two MEMS devices. A test structure is used to investigate several aspects regarding bottom and top electrodes. 450 nm ZrO2 thin film is found to be an insufficient diffusion barrier layer...

  3. Effect of heat and film thickness on a photoinduced phase transition in azobenzene liquid crystalline polyesters

    DEFF Research Database (Denmark)

    Sanchez, C; Alcala, R; Hvilsted, Søren

    2003-01-01

    The liquid crystal to isotropic phase transition induced with 488 nm light in films of liquid crystalline azobenzene polyesters has been studied as a function of temperature, light intensity, and film thickness. That phase transition is associated with the photoinduced trans-cis-trans isomerizati...

  4. Spacer Thickness-Dependent Electron Transport Performance of Titanium Dioxide Thick Film for Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Reda E. El-Shater

    2015-01-01

    Full Text Available A titanium dioxide (P25 film was deposited by cast coating as conductive photoelectrode and subsequently immersed in dye solution (N719 to fabricate the photoanode of dye-sensitized solar cells (DSSCs. A plastic spacer was used as a separation and sealant layer between the photoanode and the counter electrode. The effect of the thickness of this spacer on the transfer of electrons in the liquid electrolyte of the DSSCs was studied by means of both IV curves and electrochemical impedance. Using a spacer thickness range of 20 μm to 50 μm, efficiency ranges from 3.73% to 7.22%. The highest efficiency of 7.22% was obtained with an optimal spacer thickness of 40 μm.

  5. The Effects of Two Thick Film Deposition Methods on Tin Dioxide Gas Sensor Performance

    OpenAIRE

    Bakrania, Smitesh D.; Margaret S. Wooldridge

    2009-01-01

    This work demonstrates the variability in performance between SnO2 thick film gas sensors prepared using two types of film deposition methods. SnO2 powders were deposited on sensor platforms with and without the use of binders. Three commonly utilized binder recipes were investigated, and a new binder-less deposition procedure was developed and characterized. The binder recipes yielded sensors with poor film uniformity and poor structural integrity, compared to the binder-less deposition meth...

  6. The Influence of Electrical Pulses on Thick Film (Du Pont 1421 Birox) Resistors

    OpenAIRE

    Tancula, M.; Kozlowski, J. M.

    1982-01-01

    This paper presents data on the effect of electric pulses on thick film resistors made using Du Pont 1421 Birox resistor pastes.Resistance changes during the application of the electric pulses were investigated. Two types of change were observed: reversible and irreversible (i.e. catastrophic).In order to illustrate the causes of these changes, observations of the film on a scanning electron microscope were made. Microcracks were observed in the film, which were mostly responsible for the per...

  7. Thickness dependency of sol-gel derived ZnO thin films on gas sensing behaviors

    Energy Technology Data Exchange (ETDEWEB)

    Kakati, Nitul; Jee, Seung Hyun; Kim, Su Hyun; Oh, Jun Young; Yoon, Young Soo, E-mail: yoonys@yonsei.ac.k

    2010-10-29

    ZnO thin films were fabricated by a sol-gel method using Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O as starting material in order to prepare an acetone gas sensor. A homogeneous and stable solution was prepared by dissolving the zinc acetate in a solution of ethanol and monoethanolamine. The sol-gel solution is coated on alumina substrates with various thicknesses by spin coating technique and heat treated to grow crystalline ZnO thin films. The effect of thickness on physical and electrical properties of as deposited ZnO thin films has been studied. The as deposited ZnO thin films were characterized by X-ray diffraction spectroscopy, field emission scanning electron microscopy and atomic force microscopy. The root mean square surface roughness factors increase with thickness of the films and found 3.9, 6.6, 9.0, and 11.28 nm for 80-, 220-, 450- and 620-nm-thin films respectively. The activation energies of the films are calculated from the resistance temperature characteristics. The sensitivities of the ZnO films towards the acetone gas were determined at an operating temperature of 200 {sup o}C. The sensitivity towards acetone vapor is strongly depending on surface morphology of the ZnO thin films.

  8. Terahertz paintmeter for noncontact monitoring of thickness and drying progress in paint film

    Science.gov (United States)

    Yasui, Takeshi; Yasuda, Takashi; Sawanaka, Ken-Ichi; Araki, Tsutomu

    2005-11-01

    We propose a paintmeter for noncontact and remote monitoring of the thickness and drying progress of a paint film based on the time-of-flight measurement of the echo signal of a terahertz (THz) electromagnetic pulse. The proposed method is effectively applied to two-dimensional mapping of the painting thickness distribution for single-layer and multilayer paint films. Furthermore, adequate parameters for the drying progress are extracted from the THz pulse-echo signal and effectively applied to monitor the wet-to-dry transformation. The THz paintmeter can be a powerful tool for quality control of the paint film on the in-process monitoring of car body painting.

  9. Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Ohno, Takeo, E-mail: t-ohno@wpi-aimr.tohoku.ac.jp [WPI - Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Japan Science and Technology Agency (JST), PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Samukawa, Seiji, E-mail: samukawa@ifs.tohoku.ac.jp [WPI - Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Institute of Fluid Science (IFS), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)

    2015-04-27

    Resistive switching in a Cu/Ta{sub 2}O{sub 5}/Pt structure that consisted of a few nanometer-thick Ta{sub 2}O{sub 5} film was demonstrated. The Ta{sub 2}O{sub 5} film with thicknesses of 2–5 nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2 V and multilevel switching operation.

  10. Ceramic thick film humidity sensor based on MgTiO{sub 3} + LiF

    Energy Technology Data Exchange (ETDEWEB)

    Kassas, Ahmad, E-mail: a.kassas.mcema@ul.edu.lb [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon); Laboratoire Universitaire des Sciences Appliquées de Cherbourg (LUSAC), 50130 Cherbourg-Octeville (France); Bernard, Jérôme; Lelièvre, Céline; Besq, Anthony; Guhel, Yannick; Houivet, David; Boudart, Bertrand [Laboratoire Universitaire des Sciences Appliquées de Cherbourg (LUSAC), 50130 Cherbourg-Octeville (France); Lakiss, Hassan [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon); Faculty of Engineering, Section III, Hariri Campus, Hadath, Beirut (Lebanon); Hamieh, Tayssir [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon)

    2013-10-15

    Graphical abstract: - Highlights: • The fabricated sensor based on MgTiO{sub 3} + LiF materials used the spin coating technology. • The response time is 70 s to detect variation between 5 and 95% relative humidity. • The addition of Scleroglucan controls the viscosity and decreases the roughness of thick film surface. • This humidity sensor is a promising, low-cost, high-quality, reliable ceramic films, that is highly sensitive to humidity. - Abstract: The feasibility of humidity sensor, consisting of a thick layer of MgTiO{sub 3}/LiF materials on alumina substrate, was studied. The thermal analysis TGA-DTGA and dilatometric analysis worked out to confirm the sintering temperature. An experimental plan was applied to describe the effects of different parameters in the development of the thick film sensor. Structural and microstructural characterizations of the developed thick film were made. Rheological study with different amounts of a thickener (scleroglucan “sclg”), showing the behavior variation, as a function of sclg weight % was illustrated and rapprochement with the results of thickness variation as a function of angular velocity applied in the spin coater. The electrical and dielectric measurements confirmed the sensitivity of the elaborated thick film against moisture, along with low response time.

  11. Lift-off PMN-PT Thick Film for High Frequency Ultrasonic Biomicroscopy.

    Science.gov (United States)

    Zhu, Benpeng; Han, Jiangxue; Shi, Jing; Shung, K Krik; Wei, Q; Huang, Yuhong; Kosec, M; Zhou, Qifa

    2010-10-01

    Piezoelectric 0.65Pb(Mg(1/3)Nb(2/3))O(3)-0.35PbTiO(3) (PMN-35PT) thick film with a thickness of approximately 12 µm has been deposited on the platinum buffered Si substrate via a sol-gel composite method. The separation of the film from the substrate was achieved using a wet chemical method. The lifted-off PMN-35PT thick film exhibited good dielectric and ferroelectric properties. At 1 kHz, the dielectric constant and the dielectric loss were 3,326 and 0.037, respectively, while the remnant polarization was 30.0 µC/cm(2). A high frequency single element acoustic transducer fabricated with this film showed a bandwidth at -6 dB of 63.6% at 110 MHz.

  12. Investigation of magnetic properties in thick CoFeB alloy films for controllable anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ke; Huang, Ya; Chen, Ruofei; Xu, Zhan [Huaqiao University, College of Information Science and Engineering, Xiamen City (China)

    2016-02-15

    CoFeB alloy material has attracted interest for its wide uses in magnetic memory devices and sensors. We investigate magnetic properties of thick Co{sub 40}Fe{sub 40}B{sub 20} films in the thickness range from 10 to 100 nm sandwiched by MgO and Ta layers. Strong in-plane uniaxial magnetic anisotropy is revealed in the as-deposited amorphous films by angular dependent magnetic measurements, and the growth-induced anisotropy is found to strongly depend on the film thickness. A fourfold cubic magnetic anisotropy develops with annealing, as a result of improved crystalline structure in films confirmed by X-ray diffraction measurements. The observed magnetic properties can be explained by the superposition of the uniaxial and additional cubic magnetic anisotropy, tuned by annealing temperature. (orig.)

  13. Investigation of magnetic properties in thick CoFeB alloy films for controllable anisotropy

    Science.gov (United States)

    Wang, Ke; Huang, Ya; Chen, Ruofei; Xu, Zhan

    2016-02-01

    CoFeB alloy material has attracted interest for its wide uses in magnetic memory devices and sensors. We investigate magnetic properties of thick Co40Fe40B20 films in the thickness range from 10 to 100 nm sandwiched by MgO and Ta layers. Strong in-plane uniaxial magnetic anisotropy is revealed in the as-deposited amorphous films by angular dependent magnetic measurements, and the growth-induced anisotropy is found to strongly depend on the film thickness. A fourfold cubic magnetic anisotropy develops with annealing, as a result of improved crystalline structure in films confirmed by X-ray diffraction measurements. The observed magnetic properties can be explained by the superposition of the uniaxial and additional cubic magnetic anisotropy, tuned by annealing temperature.

  14. Influence of Thickness on Field Emission Characteristics of Nanometre Boron Nitride Thin Films

    Institute of Scientific and Technical Information of China (English)

    顾广瑞; 李英爱; 陶艳春; 何志; 李俊杰; 殷红; 李卫青; 赵永年

    2003-01-01

    Nanometre boron nitride (BN) thin films with various thickness (54-135 nm) were prepared on Si(100) by rf magnetic sputtering physical vapour deposition. The field emission characteristics of the BN thin films were measured in an ultrahigh vacuum system. A threshold electric field of 11 V/μm and the highest emission current density of 240 μA/cm2 at an electric field of 23 V/μm were obtained for the about 54-nm-thick BN film. The threshold electric field increases with increasing the thickness in the nanometre range. The Fowler-Nordheim plots show that electrons were emitted from BN to vacuum by tunnelling through the potential barrier at the surface of BN thin films.

  15. Electromechanical Properties of Microcantilever Actuated by Enhanced Piezoelectric PZT Thick Film

    Institute of Scientific and Technical Information of China (English)

    LIU Hong-Mei; ZHAO Quan-Liang; CAO Mao-Sheng; YUAN Jie; DUAN Zhong-Xia; QIU Cheng-Jun

    2008-01-01

    Pb(Zro.53,Tio.47)O3 (PZT) films with thicknesses of 0.8μm, 2μm and 4μm are prepared by a sol-gel method and their longitudinal piezoelectric coefficients are analysed. The results show that the PZT thick films, whose density is closer to bulk PZT, has the better crystallization, with d33 and density much larger than those of PZT thin films. A piezoelectric microcantilever actuated by a 4-μm-thick PZT film is fabricated and its displacement is measured in different frequencies and voltages. The displacement increases linearly with the increasing bias,and the maximum displacement of 0.544 μm is observed at 30kHz for 5V bias. The resonant frequency obtained in the experiment matches quite well with the theoretical result, and it is shown that the resonant frequency of PZT microcantilever could be controlled and predicated.

  16. Microstructure parameters and optical properties of cadmium ferrite thin films of variable thickness

    Science.gov (United States)

    Shaaban, E. R.

    2014-06-01

    CdFe2O4 thin films of different thicknesses were deposited onto glass substrates by the thermal evaporation technique. Their structural characteristics were studied by X-ray diffraction (XRD). The microstructure parameters, crystallite size, and microstrain were calculated. It is observed that both the crystallite size increases and microstrain increase with increasing with the film thickness. The fundamental optical parameters like absorption coefficient and optical band gap are calculated in the strong absorption region of transmittance and reflectance spectrum. The refractive indices have been evaluated in terms of the envelope method, which has been suggested by Swanepoel in the transparent region. The refractive index can be extrapolated by the Cauchy dispersion relationship over the whole spectra range, which extended from 400 to 2500 nm. The refractive index, n, increases on increasing the film thickness up to 733 nm and the variation of n with higher thickness lies within the experimental errors.

  17. Self-Poling of BiFeO3 Thick Films.

    Science.gov (United States)

    Khomyakova, Evgeniya; Sadl, Matej; Ursic, Hana; Daniels, John; Malic, Barbara; Bencan, Andreja; Damjanovic, Dragan; Rojac, Tadej

    2016-08-01

    Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.

  18. Effect of withdrawal speed on film thickness and hexagonal pore-array dimensions of SBA-15 mesoporous silica thin film.

    Science.gov (United States)

    Hwang, Junho; Shoji, Naoko; Endo, Akira; Daiguji, Hirofumi

    2014-12-30

    Two-dimensional hexagonal mesoporous silica thin films of SBA-15 were synthesized on Si substrates via dip-coating using an evaporation-induced self-assembly process. The effect of the withdrawal speed on the thicknesses, one-dimensional pore alignments, and two-dimensional hexagonal pore arrays of the films was elucidated. Detailed analyses of FE-SEM and TEM images and XRD and XRR patterns of the synthesized thin films clarified that the pore sizes, interplanar spacings, and film thicknesses depend on the withdrawal speed. Furthermore, the same films were synthesized on Si substrates with microtrenches. The local flow of coating solutions around microtrenches affects the pore direction as well as the film thickness. In order to form well-ordered mesoporous silica thin films with large surface areas, it is important to control the synthetic conditions such as the local flow of the coating solutions as well as the physicochemical properties of the silica precursor solutions or template molecules.

  19. An estimation method on failure stress of micro thickness Cu film-substrate structure

    Institute of Scientific and Technical Information of China (English)

    WANG XiShu; LI Ying; MENG XiangKang

    2009-01-01

    The failure of thin film-substrate structure occurs mainly at the thin film or the interface.However,the characterizing and estimating methods of failure stress in thin film are neither uniform nor effective because there are some complex effects of such as size,interface and stress state on the failure behavior of thin film-substrate structure.Based on the scanning electron microscope(SEM)in-situ investigation on the failure models of the Cu thin film-substrata structure and the nano scratched testing results,the failure stresses in different thicknesses of the Cu film-substrate were characterized,which were compared and confirmed by other methods,such as Stoney formula and other empiric equations.These results indicate that the novel estimating method of failure stress in thin film based on the critical wavelength of surface unstable analysis is better than other methods.The main reason is that the novel estimating method of failure stress in meso thickness film fully considered the effect factors of free surface unstable behavior and elastic anisotropy of thin film.Therefore,the novel estimating method of failure stress assists people to understand the critical interracial strength and to set up the failure criterion of thin film-substrate structure.

  20. An estimation method on failure stress of micro thickness Cu film-substrate structure

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    The failure of thin film-substrate structure occurs mainly at the thin film or the interface. However, the characterizing and estimating methods of failure stress in thin film are neither uniform nor effective because there are some complex effects of such as size, interface and stress state on the failure behavior of thin film-substrate structure. Based on the scanning electron microscope (SEM) in-situ in- vestigation on the failure models of the Cu thin film-substrate structure and the nano scratched testing results, the failure stresses in different thicknesses of the Cu film-substrate were characterized, which were compared and confirmed by other methods, such as Stoney formula and other empiric equations. These results indicate that the novel estimating method of failure stress in thin film based on the critical wavelength of surface unstable analysis is better than other methods. The main reason is that the novel estimating method of failure stress in meso thickness film fully considered the effect factors of free surface unstable behavior and elastic anisotropy of thin film. Therefore, the novel estimating method of failure stress assists people to understand the critical interfacial strength and to set up the failure criterion of thin film-substrate structure.

  1. Surface functionalization by fine ultraviolet-patterning of nanometer-thick liquid lubricant films

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Renguo [Department of Complex Systems Science, Graduate School of Information Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Zhang, Hedong, E-mail: zhang@is.nagoya-u.ac.jp [Department of Complex Systems Science, Graduate School of Information Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601 (Japan); Komada, Suguru [Department of Micro-Nano System Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Mitsuya, Yasunaga [Nagoya Industrial Science Research Institute, Noa Yotsuya Building 2F, 1-13, Yotsuya-Douri, Chikusa-ku, Nagoya 464-0819 (Japan); Fukuzawa, Kenji; Itoh, Shintaro [Department of Micro-Nano System Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2014-11-30

    Highlights: • We present fine UV-patterning of nm-thick liquid films for surface functionalization. • The patterned films exhibit both a morphological pattern and a functional pattern of different surface properties. • The finest pattern linewidth was 0.5 μm. • Fine patterning is crucial for improving surface and tribological properties. - Abstract: For micro/nanoscale devices, surface functionalization is essential to achieve function and performance superior to those that originate from the inherent bulk material properties. As a method of surface functionalization, we dip-coated nanometer-thick liquid lubricant films onto solid surfaces and then patterned the lubricant films with ultraviolet (UV) irradiation through a photomask. Surface topography, adhesion, and friction measurements demonstrated that the patterned films feature a concave–convex thickness distribution with thicker lubricant in the irradiated regions and a functional distribution with lower adhesion and friction in the irradiated convex regions. The pattern linewidth ranged from 100 to as fine as 0.5 μm. The surface functionalization effect of UV-patterning was investigated by measuring the water contact angles, surface energies, friction forces, and depletion of the patterned, as-dipped, and full UV-irradiated lubricant films. The full UV-irradiated lubricant film was hydrophobic with a water contact angle of 102.1°, and had lower surface energy, friction, and depletion than the as-dipped film, which was hydrophilic with a water contact angle of 80.7°. This demonstrates that UV irradiation substantially improves the surface and tribological properties of the nanometer-thick liquid lubricant films. The UV-patterned lubricant films exhibited superior surface and tribological properties than the as-dipped film. The water contact angle increased and the surface energy, friction, and depletion decreased as the pattern linewidth decreased. In particular, the 0.5-μm patterned lubricant

  2. Improved gas sensing and dielectric properties of Fe doped hydroxyapatite thick films: Effect of molar concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Mene, Ravindra U. [PDEA' s, Annasaheb Waghire College of Science, Arts and Commerce, Otur 412409, M.S. (India); School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606, M.S. (India); Mahabole, Megha P. [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606, M.S. (India); Mohite, K.C. [Haribhai. V. Desai College, Pune 411002, M.S. (India); Khairnar, Rajendra S., E-mail: rskhairnarsps@gmail.com [School of Physical Sciences, Swami Ramanand Teerth Marathwada University, Nanded 431606, M.S. (India)

    2014-02-01

    Highlights: • We report improved gas sensing and dielectric characteristics of Fe ion exchanged HAp films. • Fe doped HAp film shows maximum gas response at relatively lower temperature. • Response and gas uptake capacity of sensors is improved for appropriate amount of Fe ions in HAp matrix. • Fe-HAp films exhibit remarkable improvement in dielectric properties compared to pure HAp. • Fe doped HAp films show significant improvement in gas sensing as well as in dielectric properties. - Abstract: In the present work Fe doped hydroxyapatite (Fe-HAp) thick films has been successfully utilized to improve the gas sensing as well as its dielectric properties. Initially, HAp nano powder is synthesized by chemical precipitation process and later on Fe ions are doped in HAp by ion exchange process. Structural and morphological modifications are observed by means of X-ray diffraction and scanning electron microscopy analysis. The sensing parameters such as operating temperature, response/recovery time and gas uptake capacity are experimentally determined. The Fe-HAp (0.05 M) film shows improved CO and CO{sub 2} gas sensing capacity at lower operating temperature compared to pure HAp. Moreover, variation of dielectric constant and dielectric loss for pure and Fe-HAp thick films are studied as a function of frequency in the range of 10 Hz–1 MHz. The study reveals that Fe doped HAp thick films improve the sensing and dielectric characteristics as compared to pure HAp.

  3. Impact of thickness on microscopic and macroscopic properties of Fe-Te-Se superconductor thin films

    Directory of Open Access Journals (Sweden)

    N. Zhang

    2015-04-01

    Full Text Available A series of iron based Fe-Te-Se superconductor thin films depositing on 0.7wt% Nb-doped SrTiO3 at substrate temperatures in the 250°C -450°C range by pulsed laser ablation of a constituents well defined precursor FeTe0.55Se0.55 target sample. We study the possible growth mechanism and its influence on the superconductor properties. Experimental results indicate the superconductive and non-superconductive properties are modulated only by the thickness of the thin films through the temperature range. The films appear as superconductor whenever the thickness is above a critical value ∼30nm and comes to be non-superconductor below this value. Relative ratios of Fe to (Te+Se in the films retained Fe/(Te+Se1 for non-superconductor no matter what the film growth temperature was. The effect of film growth temperature takes only the role of modulating the ratio of Te/Se and improving crystallinity of the systems. According to the experimental results we propose a sandglass film growth mechanism in which the interfacial effect evokes to form a Fe rich area at the interface and Se or Te starts off a consecutive filling up process of chalcogenide elements defect sides, the process is significant before the film thickness reaches at ∼30nm.

  4. Impact of film thickness on the morphology of mesoporous carbon films using organic-organic self-assembly.

    Science.gov (United States)

    Vogt, Bryan D; Chavez, Vicki L; Dai, Mingzhi; Arreola, M Regina Croda; Song, Lingyan; Feng, Dan; Zhao, Dongyuan; Perera, Ginusha M; Stein, Gila E

    2011-05-03

    Mesoporous polymer and carbon thin films are prepared by the organic-organic self-assembly of an oligomeric phenolic resin with an amphiphilic triblock copolymer template, Pluronic F127. The ratio of resin to template is selected such that a body-centered cubic (Im3m) mesostructure is formed in the bulk. However, well-ordered mesoporous films are not always obtained for thin films (body-centered cubic symmetry with a preferential orientation of the closest-packed (110) plane parallel to the substrate. Film thickness and initial composition of the carbonizable precursors in the template are critical factors in determining the morphology of mesoporous carbon films. These results provide insight into why difficulties have been reported in producing ultrathin ordered mesoporous carbon films using cooperative organic-organic self-assembly.

  5. Equivalent-Circuit Model for the Thickness-Shear Mode Resonator with a Viscoelastic Film Near Film Resonance

    Energy Technology Data Exchange (ETDEWEB)

    BANDEY, HELEN L.; BROWN, MARK J.; CERNOSEK, RICHARD W.; HILLMAN, A. ROBERT; MARTIN, STEPHEN J.

    1999-09-16

    We derive a lumped-element, equivalent-circuit model for the thickness shear mode (TSM) resonator with a viscoelastic film. This modified Butterworth-Van Dyke model includes in the motional branch a series LCR resonator, representing the quartz resonance, and a parallel LCR resonator, representing the film resonance. This model is valid in the vicinity of film resonance, which occurs when the acoustic phase shift across the film is an odd multiple of {pi}/2 radians. This model predicts accurately the frequency changes and damping that arise at resonance and is a reasonable approximation away from resonance. The elements of the model are explicitly related to film properties and can be interpreted in terms of elastic energy storage and viscous power dissipation. The model leads to a simple graphical interpretation of the coupling between the quartz and film resonances and facilitates understanding of the resulting responses. These responses are compared with predictions from the transmission-line and the Sauerbrey models.

  6. Effect of Nanotube Film Thickness on the Performance of Nanotube-Silicon Hybrid Solar Cells

    Directory of Open Access Journals (Sweden)

    Daniel D. Tune

    2013-12-01

    Full Text Available The results of measurements on solar cells made from randomly aligned thin films of single walled carbon nanotubes (SWCNTs on n-type monocrystalline silicon are presented. The films are made by vacuum filtration from aqueous TritonX-100 suspensions of large diameter arc-discharge SWCNTs. The dependence of the solar cell performance on the thickness of the SWCNT film is shown in detail, as is the variation in performance due to doping of the SWCNT film with SOCl2.

  7. Unusual Contact-Line Dynamics of Thick Films and Drops

    Science.gov (United States)

    Veretennikov, Igor; Agarwal, Abhishek; Indeikina, Alexandra; Chang, Hsueh-Chia

    1999-01-01

    We report several novel phenomena In contact-line and fingering dynamics of macroscopic spinning drops and gravity-driven films with dimensions larger than the capillary length. It is shown through experimental and theoretical analysis that such macroscopic films can exhibit various interfacial shapes, including multi valued ones, near the contact line due to a balance between the external body forces with capillarity. This rich variety of front shapes couples with the usual capillary, viscous, and intermolecular forces at the contact line to produce a rich and unexpected spectrum of contact-line dynamics. A single finger develops when part of the front becomes multivalued on a partially wetting macroscopic spinning drop in contrast to a different mechanism for microscopic drops of completely wetting fluids. Contrary to general expectation, we observe that, at high viscosity and low frequencies of rotation, the speed of a glycerine finger increases with increasing viscosity. Completely wetting Dow Corning 200 Fluid spreads faster over a dry inclined plane than a prewetted one. The presence of a thin prewetted film suppresses fingering both for gravity-driven flow and for spin coating. We analyze some of these unique phenomena in detail and offer qualitative physical explanations for the others.

  8. Thickness dependence of structural, electrical and optical behaviour of undoped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bouderbala, M.; Hamzaoui, S. [Laboratoire de Microscopie Electronique et des Sciences des Materiaux, Departement de Physique, USTO, B.P. 1505, El-Mnaouer, 31000 Oran (Algeria); Amrani, B. [Department of Physics, Centre Universitaire de Mascara, Mascara 29000 (Algeria)], E-mail: abouhalouane@yahoo.fr; Reshak, Ali H. [Institute of Physical Biology-South Bohemia University, Institute of System Biology and Ecology-Academy of Sciences, Nove Hrady 37333 (Czech Republic); Adnane, M.; Sahraoui, T.; Zerdali, M. [Laboratoire de Microscopie Electronique et des Sciences des Materiaux, Departement de Physique, USTO, B.P. 1505, El-Mnaouer, 31000 Oran (Algeria)

    2008-09-01

    Undoped ZnO thin films of different thicknesses were prepared by r.f. sputtering in order to study the thickness effect upon their structural, morphological, electrical and optical properties. The results suggest that the film thickness seems to have no clear effect upon the orientation of the grains growth. Indeed, the analysis with X-ray diffraction show that the grains were always oriented according to the c(0 0 2)-axis perpendicular to substrate surface whatever the thickness is. However, the grain size was influenced enough by this parameter. An increase in the grain size versus the thickness was noted. For the electrical properties, measurements revealed behaviour very dependent upon thickness. The resistivity decreased from 25 to 1.5x10{sup -3} {omega} cm and the mobility increased from 2 to 37 cm{sup 2} V{sup -1} s{sup -1} when the thickness increased from 70 to 1800 nm while the carrier concentration seems to be less affected by the film thickness and varied slightly remaining around 10{sup 20} cm{sup -3}. Nevertheless, a tendency to a decrease was noticed. This behaviour in electrical properties was explained by the crystallinity and the grain size evolution. The optical measurements showed that all the samples have a strong transmission higher than 80% in the visible range. A slight shift of the absorption edge towards the large wavelengths was observed as the thickness increased. This result shows that the band gap is slightly decreases from 3.37 to 3.32 eV with the film thickness vary from 0.32 to 0.88 {mu}m.

  9. Effect of Nanoscale Ag Film Thickness on the Electrical and Optical Properties of Transparent IZTO/Ag/IZTO Multilayer Films Deposited on Glass Substrates.

    Science.gov (United States)

    Oh, Dohyun; Lee, Nam Hyun; Cho, Woon-Jo; Kim, Tae Whan

    2015-07-01

    The effect of nanoscale Ag film thickness on the electrical and optical properties in transparent conducting oxide films consisting of an IZTO/Ag/IZTO multilayer were investigated. The homoge- neous morphologies of the Ag films sandwiched between the IZTO films affected the optical and electrical properties of the IZTO/Ag/IZTO multilayer films. The transmittance and resistivity of the IZTO/Ag/IZTO multilayer films decreased with increasing Ag film thickness. The resistivities of the IZTO/Ag/IZTO multilayer films grown on glass substrates were decreased by using an Ag thin inter- layer in comparison with that of the IZTO single layer.

  10. Critical thickness for ferromagnetism in insulating LaMnO3 films

    Science.gov (United States)

    Renshaw Wang, X.; Poccia, N.; Leusink, D. P.; Paudel, Tura R.; Tsymbal, E. Y.; Li, C. J.; Lv, W. M.; Venkatesan, T.; Ariando, Ariando; Hilgenkamp, H.

    2014-03-01

    The interplay between exchange interactions, interfacial charges, and confinement effects controls the electronic, magnetic, and transport properties of complex oxide thin films. Here we report the emergence of ferromagnetism in insulating LaMnO3 thin films grown on SrTiO3 substrates beyond a critical thickness. LaMnO3 (001) films are deposited by a pulsed laser deposition technique with thicknesses varying from 1 unit cell to 24 unit cells. The position dependent local magnetization is then mapped with micrometer resolution using scanning superconducting quantum interference device microscopy. We find that the magnetic ground state switches from non-ferromagnetic to ferromagnetic within a change of one unit cell above the critical thickness of 5 unit cells with characteristic domain size of about 20 μm. Further increase of film thickness up to 24 unit cells leads to reduction of the domain size to about 10 μm. The critical thickness is qualitatively explained in terms of the charge transfer in polar LaMnO3 (001) thin films based on results of additional experimental data, density-functional calculations, and the electrostatic modeling.

  11. Modelling and optimization of film thickness variation for plasma enhanced chemical vapour deposition processes

    Science.gov (United States)

    Waddell, Ewan; Gibson, Des; Lin, Li; Fu, Xiuhua

    2011-09-01

    This paper describes a method for modelling film thickness variation across the deposition area within plasma enhanced chemical vapour deposition (PECVD) processes. The model enables identification and optimization of film thickness uniformity sensitivities to electrode configuration, temperature, deposition system design and gas flow distribution. PECVD deposition utilizes a co-planar 300mm diameter electrodes with separate RF power matching to each electrode. The system has capability to adjust electrode separation and electrode temperature as parameters to optimize uniformity. Vacuum is achieved using dry pumping with real time control of butterfly valve position for active pressure control. Comparison between theory and experiment is provided for PECVD of diamond-like-carbon (DLC) deposition onto flat and curved substrate geometries. The process utilizes butane reactive feedstock with an argon carrier gas. Radiofrequency plasma is used. Deposited film thickness sensitivities to electrode geometry, plasma power density, pressure and gas flow distribution are demonstrated. Use of modelling to optimise film thickness uniformity is demonstrated. Results show DLC uniformity of 0.30% over a 200 mm flat zone diameter within overall electrode diameter of 300mm. Thickness uniformity of 0.75% is demonstrated over a 200mm diameter for a non-conformal substrate geometry. Use of the modelling method for PECVD using metal-organic chemical vapour deposition (MOCVD) feedstock is demonstrated, specifically for deposition of silica films using metal-organic tetraethoxy-silane. Excellent agreement between experimental and theory is demonstrated for conformal and non-conformal geometries. The model is used to explore scalability of PECVD processes and trade-off against film thickness uniformity. Application to MEMS, optical coatings and thin film photovoltaics is discussed.

  12. Microdomain orientation dependence on thickness in thin films of cylinder-forming PS-b-PMMA.

    Science.gov (United States)

    Zucchi, I A; Poliani, E; Perego, M

    2010-05-07

    The self-assembly of block-copolymer thin films in periodic nanostructures has received considerable attention during the last decade due to their potential applications in nanofabrication and nanolithography. We followed the morphologies developed in thin films of a cylinder-forming diblock copolymer polystyrene-b-poly(methylmethacrylate) ((PS-b-PMMA), PS 46.1 kg mol( - 1), PMMA 21.0 kg mol( - 1), lattice spacing L(0) = 36 nm), as a function of the film thickness (t), analyzing the effect of thickness commensurability on domain orientation in respect to the substrate. The study was circumscribed to the unexplored range of thickness below L(0). Two thickness windows with perpendicular orientation of the PMMA domains were identified: a well-known window at t approximately L(0) and a new window at t approximately L(0)/2. A half-parallel cylinder morphology was observed for [Formula: see text] with a progressive change in morphology [Formula: see text] when thickness increases from L(0)/2 to L(0). This experimental evidence provides new insights on the mechanism of block copolymers self-organization and indicates the possibility to tune the thickness of the nanostructured polymeric film below L(0), allowing the fabrication of ultrathin soft masks for advanced lithographic processes.

  13. WS{sub 2} nanotube formation by sulphurization: Effect of precursor tungsten film thickness and stress

    Energy Technology Data Exchange (ETDEWEB)

    Ng, Sheung Mei; Wong, Hon Fai; Wong, Wang Cheung; Tan, Choon Kiat; Choi, Sin Yuk; Mak, Chee Leung; Li, Gui Jun [Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon (Hong Kong); Dong, Qing Chen [MOE Key Laboratory for Interface Science and Engineering in Advanced Materials and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan 030024 (China); Leung, Chi Wah, E-mail: dennis.leung@polyu.edu.hk [Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon (Hong Kong)

    2016-09-15

    Transition metal dichalcogenides can exhibit as 2-dimensional layers, 1-dimensional nanotubes or 0-dimensional quantum dot structures. In general, dichalcogenide nanotubes are grown under stringent conditions, using high growth temperatures with tedious processes. Here, we report the controlled formation of tungsten disulphide (WS{sub 2}) nanostructures by manipulating the precursor film thickness, followed by a direct sulphurization process. WS{sub 2} nanotubes were formed by ultra-thin tungsten precursor films, while particle-like WS{sub 2} were obtained from thicker tungsten films under identical sulphurization conditions. To elucidate the origin of WS{sub 2} nanostructure formation, micron-sized tungsten film tracks were prepared, and such patterned films were found to suppress the growth of WS{sub 2} nanotubes. We attribute the suppression of nanotube formation to the relieving of film stress in patterned precursor films. - Highlights: • WS{sub 2} were obtained by sulphurization of sputtered tungsten films on Si substrates. • Resultant WS{sub 2} nanostructure morphology was dependent on precursor film thickness. • Patterning into micro-size W tracks suppressed the formation of nanotubes. • Stress relaxation was attributed as controlling factor for WS{sub 2} structure formation.

  14. Terahertz ultrathin film thickness sensor below λ/90 based on metamaterial.

    Science.gov (United States)

    Chen, Meng; Fan, Fei; Shen, Si; Wang, Xianghui; Chang, Shengjiang

    2016-08-10

    The film thickness sensing based on metamaterial is investigated in the terahertz (THz) region. We fabricated the metamaterial sensor, and demonstrated its resonance by using the THz time-domain spectroscopy system. The results show that the resonant dip redshifts as the film thickness increases, which achieves reliable film sensing in the THz band. Its sensitivity is larger than 9.4 GHz/μm with a film thinner than λ/90. Meanwhile, the sensing mechanism is revealed by the simulation of near-field resonance distribution, which shows that the resonant intensity is stronger when the field is closer to the interface between the metamaterial surface and polyvinyl alcohol film. Therefore, the nonlinear type of the sensing sensitivity in our experiment can be well explained, and a higher sensitive sensing can be obtained when the film thickness is smaller. This simple and flexible method can realize the ultrathin film sensing in the THz region, and has application potential in the real-time monitoring of sample quality.

  15. Temperature effect on the mechanical properties of gold nano films with different thickness

    Science.gov (United States)

    Birleanu, C.; Pustan, M.; Merie, V.; Müller, R.; Voicu, R.; Baracu, A.; Craciun, S.

    2016-08-01

    The microelectronic industry has been growing rapidly over the past 10-20 years, as has its reliance on thin-film deposition techniques for components manufacturing. As modern devices generate quite a bit of heat and peak temperatures can reach over 100°C, there is a need to provide adequate cooling for a device to stay operable. A series of chrome gold films with various thicknesses were prepared on silicon substrate. The structural and surface morphology, adhesion, friction, Young's modulus and hardness of this thin film were studied for three different thicknesses under temperature variations between 20 to 100°C. The variation of the film thickness and temperature affects the structure, surface and mechanical properties of Cr/Au thin films. Obviously these thermal cycles are unavoidable and eventually lead to thermal fatigue damage and device failure. Consequently, the knowledge of mechanical properties of thin films at elevated temperatures is required for proper chip design and reliability assessments. Elastic modulus and hardness are two important mechanical properties of the thin-film structural materials used in microelectromechanical systems. The mechanical properties of electroplated chrome-gold thin film are found to be highly dependent on the manufacturing process and also of the thin film thickness. On the other hand it is important to find the effect of temperature on these properties. Investigated samples are made of thin layers of chromium and gold with differences in thickness. The three levels of nominal thicknesses of Au films are: 100, 300 and 500 nm. In order to obtain the relations between surface pattern/surface chemistry and nanotribological properties and adhesive behaviors of the films were evaluated with a noise- and vibration-isolated and environment-controlled XE 70-AFM from Park Systems, using the contact mode. The tests were performed at temperatures between 10°C - 100°C and at a relative humidity RH of 40%. Each measurement was

  16. High-performance piezoelectric thick film based energy harvesting micro-generators for MEMS

    DEFF Research Database (Denmark)

    Zawada, Tomasz; Hansen, Karsten; Lou-Moeller, Rasmus

    2010-01-01

    Energy harvesting, known also as energy scavenging, covers a great body of technologies and devices that transform low grade energy sources such as solar energy, environmental vibrations, thermal energy, human motion into usable electrical energy. In this paper vibrations are used as energy source...... and are transformed by the energy harvesting micro-generator into usable electrical signal. The micro-generator comprises a silicon cantilever with integrated InSensor® TF2100 PZT thick film deposited using screen-printing. The output power versus frequency and electrical load has been investigated. Furthermore......, devices based on modified, pressure treated thick film materials have been tested and compared with the commercial InSensor® TF2100 PZT thick films. It has been found that the structures based on the pressure treated materials exhibit superior properties in terms of energy output....

  17. Mems-based pzt/pzt bimorph thick film vibration energy harvester

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2011-01-01

    We describe fabrication and characterization of a significantly improved version of a MEMS-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. The main advantage of bimorph vibration energy harvesters is that strain energy is not lost in mechanical...... support materials since only PZT is strained, and thus it has a potential for significantly higher output power. An improved process scheme for the energy harvester resulted in a robust fabrication process with a record high fabrication yield of 98.6%. Moreover, the robust fabrication process allowed...... a high pressure treatment of the screen printed PZT thick films prior to sintering, improving the PZT thick film performance and harvester power output reaches 37.1 μW at 1 g....

  18. Adsorbed films of three-patch colloids: Continuous and discontinuous transitions between thick and thin films

    Science.gov (United States)

    Dias, C. S.; Araújo, N. A. M.; Telo da Gama, M. M.

    2014-09-01

    We investigate numerically the role of spatial arrangement of the patches on the irreversible adsorption of patchy colloids on a substrate. We consider spherical three-patch colloids and study the dependence of the kinetics on the opening angle between patches. We show that growth is suppressed below and above minimum and maximum opening angles, revealing two absorbing phase transitions between thick and thin film regimes. While the transition at the minimum angle is continuous, in the directed percolation class, that at the maximum angle is clearly discontinuous. For intermediate values of the opening angle, a rough colloidal network in the Kardar-Parisi-Zhang universality class grows indefinitely. The nature of the transitions was analyzed in detail by considering bond flexibility, defined as the dispersion of the angle between the bond and the center of the patch. For the range of flexibilities considered we always observe two phase transitions. However, the range of opening angles where growth is sustained increases with flexibility. At a tricritical flexibility, the discontinuous transition becomes continuous. The practical implications of our findings and the relation to other nonequilibrium transitions are discussed.

  19. Interference-aided spectrum fitting method for accurately film thickness determination

    CERN Document Server

    Liu, Xingxing; Xia, Hui; Zhang, Xutao; Ji, Ruonan; Li, Tianxin; Lu, Wei

    2016-01-01

    A new approach was proposed to accurately determine the thickness of film, especially for ultra-thin film, through spectrum fitting with the assistance of interference layer. The determination limit can reach even less than 1 nm. Its accuracy is far better than traditional methods. This determination method is verified by experiments and the determination limit is at least 3.5 nm compared with the results of AFM. Furthermore, double-interference-aided spectra fitting method is proposed to reduce the requirements of determination instruments, which allow one to determine the film thickness with a low precision common spectrometer and largely lower the cost. It is a very high precision determination method for on-site and in-situ applications, especially for ultra-thin films.

  20. Multifunctional thick-film structures based on spinel ceramics for environment sensors

    Energy Technology Data Exchange (ETDEWEB)

    Vakiv, M; Hadzaman, I; Klym, H; Shpotyuk, O [Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, 79031 (Ukraine); Brunner, M, E-mail: shpotyuk@novas.lviv.ua, E-mail: klymha@yahoo.com [Fachhochschule Koeln/University of Applied Sciences, 2 Betzdorfer str., Koeln, 50679 (Germany)

    2011-04-01

    Temperature sensitive thick films based on spinel-type NiMn{sub 2}O{sub 4}-CuMn{sub 2}O{sub 4}-MnCo{sub 2}O{sub 4} manganites with p- and p{sup +}-types of electrical conductivity and their multilayer p{sup +}-p structures were studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170 deg. C. It is shown that degradation processes connected with diffusion of metallic Ag into film grain boundaries occur in one-layer p-and p{sup +}-conductive films. Some part of the p{sup +}-p structures were of high stability, the relative electrical drift being no more than 1 %.

  1. Thick and hard anodized aluminum film with large pores for surface composites

    Institute of Scientific and Technical Information of China (English)

    WANG Hui; WANG Hao-wei

    2004-01-01

    Al-base surface self-lubricating composites need thick and hard alumina membranes with large pores to add lubricants easily. This kind of porous alumina layer was fabricated in additive-containing, phosphoric acid-based solution. The effects of additive containing organic carboxylic acid and Ce salt on the properties of the oxide film and mechanism were investigated in detail with SEM and EDAX analyses. The results show that the pore diameter is about 100 nm, the film thickness increases by 4 -5 times, and the Vickers hardness improves by about 50% through adding some amount of organic carboxylic acid and Ce salt. Such an improvement in properties is explained in terms of a lower film dissolving velocity and better film quality in compound solution.

  2. Thick growing multilayer nanobrick wall thin films: super gas barrier with very few layers.

    Science.gov (United States)

    Guin, Tyler; Krecker, Michelle; Hagen, David Austin; Grunlan, Jaime C

    2014-06-24

    Recent work with multilayer nanocoatings composed of polyelectrolytes and clay has demonstrated the ability to prepare super gas barrier layers from water that rival inorganic CVD-based films (e.g., SiOx). In an effort to reduce the number of layers required to achieve a very low oxygen transmission rate (OTR (layer-by-layer (LbL) assembly. Buffering the chitosan solution and its rinse with 50 mM Trizma base increased the thickness of these films by an order of magnitude. The OTR of a 1.6-μm-thick, six-bilayer film was 0.009 cc/m(2)·day·atm, making this the best gas barrier reported for such a small number of layers. This simple modification to the LbL process could likely be applied more universally to produce films with the desired properties much more quickly.

  3. Thickness and structure of the water film deposited from vapour on calcite surfaces

    DEFF Research Database (Denmark)

    Bohr, Jakob; Wogelius, Roy A.; Morris, Peter M.

    2010-01-01

    Synchrotron X-ray reflectivity (SXR) was used to measure the thickness of the water film that adsorbs on a {10¯14} cleavage surface of calcite (CaCO3) in a sample chamber where relative humidity could be controlled within the range from......Synchrotron X-ray reflectivity (SXR) was used to measure the thickness of the water film that adsorbs on a {10¯14} cleavage surface of calcite (CaCO3) in a sample chamber where relative humidity could be controlled within the range from...

  4. Thickness dependent exchange bias in martensitic epitaxial Ni-Mn-Sn thin films

    Directory of Open Access Journals (Sweden)

    Anna Behler

    2013-12-01

    Full Text Available A thickness dependent exchange bias in the low temperature martensitic state of epitaxial Ni-Mn-Sn thin films is found. The effect can be retained down to very small thicknesses. For a Ni50Mn32Sn18 thin film, which does not undergo a martensitic transformation, no exchange bias is observed. Our results suggest that a significant interplay between ferromagnetic and antiferromagnetic regions, which is the origin for exchange bias, is only present in the martensite. The finding is supported by ab initio calculations showing that the antiferromagnetic order is stabilized in the phase.

  5. Laser drilling of vias in dielectric for high density multilayer LSHI thick film circuits

    Science.gov (United States)

    Cocca, T.; Dakesian, S.

    1977-01-01

    A design analysis of a high density multilevel thick film digital microcircuit used for large scale integration is presented. The circuit employs 4 mil lines, 4 mil spaces and requires 4 mil diameter vias. Present screened and fired thick film technology is limited on a production basis to 16 mil square vias. A process whereby 4 mil diameter vias can be fabricated in production using laser technology was described along with a process to produce 4 mil diameter vias for conductor patterns which have 4 mil lines and 4 mil spacings.

  6. Some limitations in applying classical EHD film-thickness formulae to a high-speed bearing

    Science.gov (United States)

    Coy, J. J.; Zaretsky, E. V.

    1980-01-01

    Elastohydrodynamic film thickness was measured for a 20 mm ball bearing using the capacitance technique. The bearing was thrust loaded to 90, 448, and 778 N. The corresponding maximum stresses on the inner race were 1.28, 2.09, and 2.45 GPa. Test speeds ranged from 400 to 14,000 rpm. Film thickness measurements were taken with four different lubricants: (1) synthetic paraffinic; (2) synthetic paraffinic with additives; (3) neopentylpolyol (tetra) ester; and (4) synthetic cycloaliphatic hydrocarbon traction fluid. The test bearing was mist lubricated. Test temperatures were 300, 338, and 393 K. The measured results were compared to theoretical predictions and are presented.

  7. A novel multi-degree-of-freedom thick-film ultrasonic motor.

    Science.gov (United States)

    Aoyagi, Manaba; Beeby, Steve P; White, Neil M

    2002-02-01

    This paper describes a new multi-degree-of-freedom (MDOF) ultrasonic motor that comprises few parts and is based on low-cost thick-film technology. Conventional ultrasonic motors using bulk lead zirconate titanate (PZT) or thin-film PZT layers are relatively expensive at the present time. Thick-film printed PZT technology provides the opportunity to reduce the costs of ultrasonic motors. To demonstrate the feasibility of this approach, an ultrasonic motor was fabricated from alumina using thick-film printed PZT actuators. The thick-film PZT and electrode layers were printed on a thin alumina plate, and a tiny cylinder was mounted at its center. This cylinder magnifies the lateral displacement of the stator, holds the spherical rotor, and transmits the driving force to the sphere. Three bending vibrations, B22, B30, B03, of the plate were applied to rotate the sphere. Sufficient displacements for rotating the sphere were obtained near the resonance of B22 by applying an excitation voltage of 200 V peak-to-peak via a three-phase drive circuit. Rotations in three orthogonal directions have been observed by controlling the phase of the driving signal to the PZT electrodes, and a MDOF ultrasonic motor was successfully realized.

  8. Measurements of liquid film thickness, concentration, and temperature of aqueous urea solution by NIR absorption spectroscopy

    Science.gov (United States)

    Pan, R.; Jeffries, J. B.; Dreier, T.; Schulz, C.

    2016-01-01

    A multi-wavelength near-infrared (NIR) diode laser absorption sensor has been developed and demonstrated for real-time monitoring of the thickness, solute concentration, and temperature of thin films of urea-water solutions. The sensor monitors the transmittance of three near-infrared diode lasers through the thin liquid film. Film thickness, urea mass fraction, and liquid temperature were determined from measured transmittance ratios of suitable combinations of lasers. Available laser wavelengths were selected depending on the variation of the NIR absorption spectrum of the solution with temperature and solute concentration. The spectral database was measured by a Fourier transform infrared spectrometer in the range 5500-8000 cm-1 for urea solutions between 5 and 40 wt% and temperatures between 298 and 338 K. A prototype sensor was constructed, and the sensor concept was first validated with measurements using a calibration cell providing liquid layers of variable thickness (200-1500 µm), urea mass fraction (5-40 wt%) and temperature (298-318 K). Temporal variations of film thickness and urea concentration were captured during the constant-temperature evaporation of a liquid film deposited on an optically polished heated quartz flat.

  9. Thickness dependence of structural and optical properties of cadmium iodide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yahia, I.S. [Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Centre of Nanotechnology, King AbdulAziz University, Jeddah (Saudi Arabia); Shapaan, M. [Department of Physics, Faculty of Science, Al-Azahar University, Cairo (Egypt); Ismail, Yasser A.M.; Aboraia, A.M. [Department of Physics, Faculty of Science, Al-Azahar University, Assiut 71542 (Egypt); Shaaban, E.R., E-mail: esamramadan2008@yahoo.com [Department of Physics, Faculty of Science, Al-Azahar University, Assiut 71542 (Egypt)

    2015-07-05

    Highlights: • Different thicknesses of CdI{sub 2} films were prepared. • Both crystallite size and microstrain of the films has been determined. • The room temperature reflectance and transmittance data are analyzed. • The refractive index and energy gap are determined. - Abstract: Structural and optical properties as a function of film thickness have been studied for the thermally evaporated cadmium iodide (CdI{sub 2}) films. According to XRD structure, the thickness of investigated films extends from 272 to 696 nm, showing hexagonal structure and good c-axis alignment normal to glass substrate plane. Both of crystallite size and lattice strain have been determined in terms of Voight method of the main peak. The optical constants, refractive index (n), and extinction coefficient (k) have been determined using envelope method. The optical absorption data indicates an allowed direct inter – band transition near the absorption edge with an optical energy gap that decreases continuously from 3.572 to 3.767 eV. Both of optical constants and energy gap show thickness dependence that can be explained in terms of structure parameters, crystallite size, and lattice strain.

  10. Ultrasonic oil-film thickness measurement: an angular spectrum approach to assess performance limits.

    Science.gov (United States)

    Zhang, Jie; Drinkwater, Bruce W; Dwyer-Joyce, Rob S

    2007-05-01

    The performance of ultrasonic oil-film thickness measurement in a ball bearing is quantified. A range of different viscosity oils (Shell T68, VG15, and VG5) are used to explore the lowest reflection coefficient and hence the thinnest oil-film thickness that the system can measure. The results show a minimum reflection coefficient of 0.07 for both oil VG15 and VG5 and 0.09 for oil T68 at 50 MHz. This corresponds to an oil-film thickness of 0.4 microm for T68 oil. An angular spectrum (or Fourier decomposition) approach is used to analyze the performance of this configuration. This models the interaction of component plane waves with the measurement system and quantifies the effect of the key parameters (transducer aperture, focal length, and center frequency). The simulation shows that for a focused transducer the reflection coefficient tends to a limiting value at small oil-film thickness. For the transducer used in this paper it is shown that the limiting reflection coefficient is 0.05 and the oil-film measurement errors increase as the reflection coefficient approaches this value. The implications for improved measurement systems are then discussed.

  11. MgB2 thick films with remarkable ductility on stainless steel substrate

    Institute of Scientific and Technical Information of China (English)

    ZHUANG Cheng-gang; AN Ling; CHEN Li-ping; DING Li-li; ZHANG Kai-cheng; CHEN Chin-ping; XU Jun; FENG Qing-rong; GAN Zi-zhao

    2006-01-01

    We fabricated several superconducting MgB2 thick films on stainless steel (SS) substrates by using hybrid physical-chemical vapor deposition (HPCVD) technique.The thickness was in the 10 pμm to 20 pμm range,and the onset critical transition temperature Te (onset) and the width of the superconducting transition ( △ T) were about 37.8 and 1.2 K.They were dense and textured along (101) direction with high tenacity,despite the existence of a little amount of MgO and Mg.We bent the films at different degrees and studied the ductility and transport properties of these MgB2 thick films under applied force.The results demonstrated that the superconducting properties of these thick films,prepared by HPCVD,stay almost unaffected even with the films bent to a large degree with a curvature of 0.5 nun.This indicated that the superconducting wires or tapes of MgB2 with a core of SS had the advantages of avoiding rigidity and brittleness in industrial handling.The technique of HPCVD has,therefore,a high application potential.

  12. Piezoelectric sensors to monitor lubricant film thickness at piston-cylinder contacts in a fired engine

    OpenAIRE

    2013-01-01

    The contact between the piston ring and cylinder liner is the most important sealing interface in an automotive engine. Understanding the contact interactions and lubricant film formation at this interface is crucial for the development of fuel-efficient and low emission engines. This article outlines the development of an ultrasonic approach to enable non-invasive measurement of the lubricant film thickness formed between piston and cylinder wall of a fired engine. The sensor system consiste...

  13. Synthesis of thick diamond films by direct current hot-cathode plasma chemical vapour deposition

    CERN Document Server

    Jin Zeng Sun; Bai Yi Zhen; Lu Xian Yi

    2002-01-01

    The method of direct current hot-cathode plasma chemical vapour deposition has been established. A long-time stable glow discharge at large discharge current and high gas pressure has been achieved by using a hot cathode in the temperature range from 1100 degree C to 1500 degree C and non-symmetrical configuration of the poles, in which the diameter of the cathode is larger than that of anode. High-quality thick diamond films, with a diameter of 40-50 mm and thickness of 0.5-4.2 mm, have been synthesized by this method. Transparent thick diamond films were grown over a range of growth rates between 5-10 mu m/h. Most of the thick diamond films have thermal conductivities of 10-12 W/K centre dot cm. The thick diamond films with high thermal conductivity can be used as a heat sink of semiconducting laser diode array and as a heat spreading and isolation substrate of multichip modules. The performance can be obviously improved

  14. Smoothness improvement of micrometer- and submicrometer-thick nanocrystalline diamond films produced by MWPECVD

    Science.gov (United States)

    Cicala, G.; Magaletti, V.; Senesi, G. S.; Tamborra, M.

    2013-04-01

    Thick (around 3 μm) and thin (48-310 nm) nanocrystalline diamond (NCD) films have been produced from Ar-rich CH4/Ar/H2 (1/89/10 %) and H2-rich CH4/H2 (1/99 %) microwave plasmas, respectively. The deposition rate and the nucleation enhancement have been monitored in situ and in real time by pyrometric and laser reflectance interferometry for micrometer- and nanometer-thick films. For thick films, an improvement of the NCD films' smoothness has been obtained by a buffer layer between the films and the treated Si substrate. For thin films, a combinatorial approach, i.e., a treatment of the Si substrate in a suspension of mixed diamond powders of 250 nm and 40-60 μm, has been utilized. The present experimental results show that the buffer layer procedure allows good preservation of the surface of the treated Si substrate and the combinatorial approach promotes effectively the seeding of the Si surface.

  15. Image processing techniques for measuring non-uniform film thickness profiles

    Energy Technology Data Exchange (ETDEWEB)

    Nitta, S.V.; Liu, An-Hong; Plawsky, J.L.; Wayner, P.C. Jr. [Rensselaer Polytechnique Institute, Troy, NY (United States)

    1996-12-31

    The long term objective of this research program is to determine the fluid flow and drying characteristics of thin liquid/solid films using image processing techniques such as Image Analyzing Interferometry (IAI) and Image Scanning Ellipsometry (ISE). The primary purpose of this paper is to present experimental data on the effectiveness of IAI and ISE to measure nonuniform film thickness profiles. Steady-state, non-isothermal profiles of evaporating films were measured using IAI. Transient thickness profiles of a draining film were measured using ISE. The two techniques are then compared and contrasted. The ISE can be used to measure transient as well as steady-state profiles of films with thickness ranging from 1 nm to > 20 {mu}m, whereas IAI can be used to directly measure Steady-state and transient profiles of only films thicker than about 100 nm. An evaluation of the reflected intensity can be used to extend the use of the IAI below 100 nm.

  16. Thickness dependent phase transformation of magnetron-sputtered Ni-Mn-Sn ferromagnetic shape memory alloy thin films

    Energy Technology Data Exchange (ETDEWEB)

    Vishnoi, Ritu; Singhal, Rahul; Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Indian Institute of Technology Roorkee, Functional Nanomaterials Research Laboratory, Department of Physics and Center of Nanotechnology (India)

    2011-09-15

    In this study, the influence of film thickness on the first-order martensite-austenite phase transformation of Ni-Mn-Sn ferromagnetic shape memory alloy thin films has been systematically investigated. Different thicknesses of the Ni-Mn-Sn films (from {approx}100 to 2,500 nm) were deposited by DC magnetron sputtering on Si (100) substrates at 550 Degree-Sign C. X-ray analysis reveals that all the films exhibit austenitic phase with the L2{sub 1} cubic crystal structure at room temperature. The grain size and crystallization extent increase with the increase in film thickness, but the films with thickness above {approx}1,400 nm show structural deterioration due to the formation of MnSn{sub 2} and Ni{sub 3}Sn{sub 4} precipitates. The improvement in the crystallinity of the film with thickness is attributed to the decrease in film-substrate interfacial strain resulting in preferred oriented growth of the films. Temperature-dependent magnetization measurements as well as electrical measurements demonstrate the complete absence of phase transformation for the film of thickness of {approx}120 nm. For thickness greater than 400 nm, film exhibits the structural transformation, and it occurs at higher temperature with better hysteresis as film thickness is increased up to {approx}1,400 nm, after which degradation of phase transformation phenomenon is observed. This degradation is attributed to the disorders present in the films at higher thicknesses. Film with thickness {approx}1,400 nm possesses the highest magnetization with the smallest thermal hysteresis among all the films and therefore best suited for the actuators based on first-order structural phase transformation. Nanoindentation measurements reveal that the higher values of hardness and elastic modulus of about 5.5 and 215.0 GPa obtained in film of 1,014 nm thickness can considerably improve the ductility of ferromagnetic shape memory alloys (FSMA) and their applicability for MEMS applications. The exchange bias

  17. Variation of structure and magnetic properties with thickness of thin Co59Fe26Ni15 films

    OpenAIRE

    Chechenin, NG; van Voorthuysen, EHD; De Hosson, JTM; Boerma, DO

    2005-01-01

    Variations of phase composition and magnetic properties of electrodeposited nanocrystalline Co-Fe-Ni films with film thickness in the range of 50-500 nm were analyzed. The samples were magnetically soft with coercivity in the range H-c = 2-20 Oe and uni axial magnetic anisotropy up to H-k = 20 Oe. It was found that H-c decreases and H-k increases with increasing film thickness. The BCC phase dominates at small film thickness up to about 80 nm and the FCC phase increases when the film growths ...

  18. Three dimensional phase field study on the thickness effect of ferroelectric polymer thin film

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    The electromechanical behavior of poly(vinylidene fluoride-trifluoroethylene)[P(VDF -TrFE)]ferroelectric thin film was investigated using the three dimensional(3D) phase-field method. Various energetic contributions,including elastic,electrostatic,and domain wall energy were taken into account in the variational functional of the phase field model.Evolution of the microscopic domain structures of P(VDF-TrFE) polymer film was simulated.Effects of the in-plane residual stress,the film thickness and externa...

  19. Thickness-Dependent Structural and Optoelectronic Properties of In2O3 Films Prepared by Spray Pyrolysis Technique

    Science.gov (United States)

    Khan, M. A. Majeed; Khan, Wasi

    2016-08-01

    In this work, nanostructured In2O3 thin films with thickness in the range of 40-160 nm were deposited on glass substrates by the chemical spray pyrolysis technique. The microstructural, surface morphology and optical properties were investigated as a function of film thickness through x-ray diffraction, scanning electron microscopy equipped with energy dispersive spectroscopy, atomic force microscopy, Raman spectroscopy, UV-visible spectroscopy and photoluminescence measurements. The x-ray diffraction analysis showed that the deposited films were polycrystalline in nature with a cubic structure having (222) as preferred orientation. The morphological analyses of the samples exhibited uniform and smooth surface of the films with systematical increments in the surface roughness with increasing film thickness. The grain size increased from 9 nm to 13 nm with increasing film thickness. Raman spectroscopy has been employed to study the crystalline quality and the structural disorder of the films. A blue-shift in the energy band gap ( E g) from 3.74 eV to 3.98 eV was observed with the increase of film thickness. Moreover, photoluminescence peaks of the In2O3 films appeared at 443 nm and 527 nm for all films. The thickness had a substantial influence on the microstructural and optical properties as well as on the luminescence intensity of the films. The strategy presented here indicates that the prepared films could be suitable candidates for optoelectronic device applications.

  20. Performances of screen-printing silver thick films: Rheology, morphology, mechanical and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Jung-Shiun; Liang, Jau-En; Yi, Han-Liou [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China); Chen, Shu-Hua [China Steel Corporation, Kaohsiung City 806, Taiwan, ROC (China); Hua, Chi-Chung, E-mail: chmcch@ccu.edu.tw [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China)

    2016-06-15

    Numerous recent applications with inorganic solar cells and energy storage electrodes make use of silver pastes through processes like screen-printing to fabricate fine conductive lines for electron conducting purpose. To date, however, there have been few studies that systematically revealed the properties of the silver paste in relation to the mechanical and electronic performances of screen-printing thick films. In this work, the rheological properties of a series of model silver pastes made of silver powders of varying size (0.9, 1.3, and 1.5 μm) and shape (irregular and spherical) were explored, and the results were systematically correlated with the morphological feature (scanning electron microscopy, SEM) and mechanical (peeling test) and electronic (transmission line method, TLM) performances of screen-printing dried or sintered thick films. We provided evidence of generally intimate correlations between the powder dispersion state in silver pastes—which is shown to be well captured by the rheological protocols employed herein—and the performances of screen-printing thick films. Overall, this study suggests the powder dispersion state and the associated phase behavior of a paste sample can significantly impact not only the morphological and electronic but also mechanical performances of screen-printing thick films, and, in future perspectives, a proper combination of silver powders of different sizes and even shapes could help reconcile quality and stability of an optimum silver paste. - Highlights: • Powder dispersion correlates well with screen-printing thick film performances. • Rheological fingerprints can be utilized to fathom the powder dispersion state. • Good polymer-powder interactions in the paste ensure good powder dispersion. • Time-dependent gel-like viscoelastic features are found with optimum silver pastes. • The size and shape of functional powder affect the dispersion and film performances.

  1. Effect of Layer and Film Thickness and Temperature on the Mechanical Property of Micro- and Nano-Layered PC/PMMA Films Subjected to Thermal Aging

    Directory of Open Access Journals (Sweden)

    Ahmed Abdel-Mohti

    2015-04-01

    Full Text Available Multilayered polymer films with biomimicking, layered structures have unique microstructures and many potential applications. However, a major limitation of polymer films is the deterioration of mechanical properties in working environments. To facilitate the design and development of multilayered polymer films, the impact of thermal aging on the mechanical behavior of micro- and nano-layered polymer films has been investigated experimentally. The composition of the polymer films that have been studied is 50 vol% polycarbonate (PC and 50 vol% poly(methyl methacrylate (PMMA. The current study focuses on the effect of film and layer thickness and temperature on the mechanical properties of the materials subjected to thermal aging. To study the effect of film and layer thickness, films with the same thickness, but various layer thicknesses, and films with the same layer thickness, but various film thicknesses, were thermally aged at 100 °C in a constant temperature oven for up to six weeks. The results show that as the layer thickness decreases to 31 nm, the film has a higher stiffness and strength, and the trend of the mechanical properties is relatively stable over aging. The ductility of all of the films decreases with aging time. To study the effect of temperature, the films with 4,096 layers (31 nm thick for each layer were aged at 100 °C, 115 °C and 125 °C for up to four weeks. While the 100 °C aging results in a slight increase of the stiffness and strength of the films, the higher aging temperature caused a decrease of the stiffness and strength of the films. The ductility decreases with the aging time for all of the temperatures. The films become more brittle for higher aging temperatures.

  2. Analysis of water film thickness on contact lens by reflectometry technique

    Science.gov (United States)

    Wang, Michael R.; Lu, Hui; Wang, Jianhua; Shen, Meixiao

    2011-03-01

    We report the use of optical reflectometry technique for evaluation of water film on contact lens. The water film can be measured through the spectral dependent reflectance evaluation, which is carried out by illuminating the contact lens with a white light and collecting the returning light with an optical fiber coupled to a spectrometer. Water film thinning process has been observed on different soft contact lenses and minimum measurable thickness is about 0.85 μm. The measurement is fast and accurate. The water film measurement can be valuable for contact lens design to improve its hydrophilic properties. The technique can be extended for the study of tear film dynamics in an eye.

  3. Temperature and Thickness Effects on Electrical Properties of InP Films Deposited by Spray Pyrolysis

    Institute of Scientific and Technical Information of China (English)

    Rcfik Kayah; Mehmet Ari; Mustafa Oztas; Metin Bedir; Funda Aksoy

    2009-01-01

    InP film samples are prepared by spray pyrolysis technique using aqueous solutions of InCl3 and Na2HPO4, which are atomized with compressed air as carrier gas onto glass substrates at 500 ℃ with different thicknesses of the films. The structural properties of the samples are determined by x-ray diffraction (XRD). It is found that the crystal structure of the InP films is polycrystailine hexagonal. The orientations of all the obtained films are along the c-axis perpendicular to the substrate. The electrical measurements of the samples are obtained by dc four-probe technique on rectangular-shape samples. The effects of temperature on the electrical properties of the InP films are studied in detail.

  4. Full-field optical thickness profilometry of semitransparent thin films with transmission densitometry

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Jay; Harris, Tequila

    2010-05-20

    A novel bidirectional thickness profilometer based on transmission densitometry was designed to measure the localized thickness of semitransparent films on a dynamic manufacturing line. The densitometer model shows that, for materials with extinction coefficients between 0.3 and 2.9 D/mm, 100-500 {mu}m measurements can be recorded with less than {+-}5% error at more than 10,000 locations in real time. As a demonstration application, the thickness profiles of 75 mmx100 mm regions of polymer electrolyte membrane (PEM) were determined by converting the optical density of the sample to thickness with the Beer-Lambert law. The PEM extinction coefficient was determined to be 1.4 D/mm, with an average thickness error of 4.7%.

  5. Predicting the Mean Liquid Film Thickness and Profile along the Annular Length of a Uniformly Heated Channel at Dryout

    Directory of Open Access Journals (Sweden)

    V.Y. Agbodemegbe

    2011-03-01

    Full Text Available The objective of this study was to predict the mean liquid film thickness and profile at high shear stress using a mechanistic approach. Knowledge of the liquid film thickness and its variation with two-phase flow parameters is critical for the estimation of safety parameters in the annular flow regime. The mean liquid film thickness and profile were predicted by the PLIFT code designed in Fortran 95 programming language using the PLATO FTN95 compiler. The film thickness was predicted within the annular flow regime for a flow boiling quality ranging from 40 to 80 % at high interfacial shear stress. Results obtained for a laminar liquid film flow were dumped into an excel file when the ratio of the actual predicted film thickness to the critical liquid film thickness lied within the range of 0.9 to unity. The film thickness was observed to decrease towards the exit of the annular regime at high flow boiling qualities and void fractions. The observation confirmed the effect of evaporation in decreasing the film thickness as quality is increased towards the exit of the annular regime.

  6. Measurement of oil film thickness and friction force on a guide shoe bearing

    DEFF Research Database (Denmark)

    Vølund, Anders

    2002-01-01

    An experimental program was carried out in order to reveal oil film thickness, and friction force of the guide shoe bearing of a large two stroke marine diesel engine. The experiment was conducted on a full size engine located at the research facility at MAN B&W Diesel A/S. The experiment was con...

  7. Sputtering of thin and intermediately thick films of solid deuterium by keV electrons

    DEFF Research Database (Denmark)

    Svendsen, Winnie Edith; Thestrup Nielsen, Birgitte; Schou, Jørgen;

    1995-01-01

    Sputtering of films of solid deuterium by keV electrons was studied in a cryogenic set-up. The sputtering yield shows a minimum yield of about 4 D2/electron for 1.5 and 2 keV electrons at a thickness slightly larger than the average projected range of the electrons. We suggest that the yield around...

  8. Investigation of top electrode for PZT thick films based MEMS sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Pedersen, Thomas; Kristiansen, Paw T.;

    2010-01-01

    In this work processing of screen printed piezoelectric PZT thick films on silicon substrates is investigated for use in future MEMS devices. E-beam evaporated Al and Pt are patterned on PZT as a top electrode using a lift-off process with a line width down to 3 mu m. Three test structures are used...

  9. Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films.

    Science.gov (United States)

    Feng, Xiao; Feng, Yang; Wang, Jing; Ou, Yunbo; Hao, Zhenqi; Liu, Chang; Zhang, Zuocheng; Zhang, Liguo; Lin, Chaojing; Liao, Jian; Li, Yongqing; Wang, Li-Li; Ji, Shuai-Hua; Chen, Xi; Ma, Xucun; Zhang, Shou-Cheng; Wang, Yayu; He, Ke; Xue, Qi-Kun

    2016-08-01

    The evolution of the quantum anomalous Hall effect with the thickness of Cr-doped (Bi,Sb)2 Te3 magnetic topological insulator films is studied, revealing how the effect is caused by the interplay of the surface states, band-bending, and ferromagnetic exchange energy. Homogeneity in ferromagnetism is found to be the key to high-temperature quantum anomalous Hall material.

  10. Microstructural Studies of Ni-P Thick Film Resistor Temperature Sensors

    Directory of Open Access Journals (Sweden)

    Barbara Holodnik

    1986-01-01

    Full Text Available Thick Ni-P films have been widely investigated at our Institute. This article tends to visualize by use of various microscopic methods how the growth and sintering of individual conducting grains, results in the formation of nickel dendrites responsible for the metallic character of electrical conduction.

  11. Thick-Film and LTCC Passive Components for High-Temperature Electronics

    Directory of Open Access Journals (Sweden)

    A. Dziedzic

    2013-04-01

    Full Text Available At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors made in thick-film or Low-Temperature Co-fired Ceramics (LTCC technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors suitable for the temperature range between 150°C and 400°C.

  12. CO responses of sensors based on cerium oxide thick films prepared from clustered spherical nanoparticles.

    Science.gov (United States)

    Izu, Noriya; Matsubara, Ichiro; Itoh, Toshio; Akamatsu, Takafumi; Shin, Woosuck

    2013-03-08

    Various types of CO sensors based on cerium oxide (ceria) have been reported recently. It has also been reported that the response speed of CO sensors fabricated from porous ceria thick films comprising nanoparticles is extremely high. However, the response value of such sensors is not suitably high. In this study, we investigated methods of improving the response values of CO sensors based on ceria and prepared gas sensors from core-shell ceria polymer hybrid nanoparticles. These hybrid nanoparticles have been reported to have a unique structure: The core consists of a cluster of ceria crystallites several nanometers in size. We compared the characteristics of the sensors based on thick films prepared from core-shell nanoparticles with those of sensors based on thick films prepared from conventionally used precipitated nanoparticles. The sensors prepared from the core-shell nanoparticles exhibited a resistance that was ten times greater than that of the sensors prepared from the precipitated nanoparticles. The response values of the gas sensors based on the core-shell nanoparticles also was higher than that of the sensors based on the precipitated nanoparticles. Finally, improvements in sensor response were also noticed after the addition of Au nanoparticles to the thick films used to fabricate the two types of sensors.

  13. Boron film thickness determination to develop a low cost neutron using Monte Carlo method

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Priscila; Raele, Marcus P.; Yoriyaz, Helio; Siqueira, Paulo de T.D.; Zahn, Guilherme S.; Genezini, Frederico A., E-mail: fredzini@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2015-07-01

    Neutron measurement is important for safety and security of workers at nuclear facilities. As neutron is an uncharged particle, for its detection is necessary to use a converter material that interacts with the neutron and produce a charged particle, which is easy to detect. One of the converter candidates is natural boron composed by about 20% of Boron-10, which capture a low energy neutron ejecting an energetic alpha particle and a lithium ion. A neutron detector can be developed applying a boron thin film over a silicon photodiode, which is charged particle sensitive. For this reason is important to determine the optimal film thickness. We have used an empirical solution for the boron film thickness evaluation; furthermore we developed, using Monte Carlo method (MCNP6), a model to simulate the alpha particles propagation through the detector. Our goal was to ensure the best production and transference of alpha particles to silicon region. The film thickness ranged between 0 to 5.5 μm, the neutron energy was also varied. The optimal thickness value will be used to develop a prototype of a low cost neutron detector. (author)

  14. Blue and green organic light-emitting devices with various film thicknesses for color tuning

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Blue and green organic light-emitting devices with a structure of indium tin oxide (ITO)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1 '-biphenyl-4,4'-diamine (NPB)/aluminum(Ⅲ) bis(2-methyl-8-quinolinato)4 -phenylphenolato (BAlq)/tris(8-hydroxyquinolate)-aluminum (Alq3)/Mg:Ag have been fabricated. Blue to green light emission has been achieved with the change of organic film thickness. Based on energy band diagram and charge carrier tunneling theory, it is concluded that the films of different thicknesses play a role as a color-tuning layer and the color-variable electroluminescence (EL) is ascribed to the modulation function within the charge carrier recombination zone. In the case of heterostructure devices with high performance, the observed EL spectra varies significantly with the thickness of organic films, which is resulted from the shift of recombination region site. It has not been hitherto indicated that the devices compose of identical components could be implemented to realize different color emission by changing the film thickness of functional layers.

  15. Thickness dependence of the L{sub 2,3} branching ratio of Cr thin films

    Energy Technology Data Exchange (ETDEWEB)

    Aksoy, F. [Physics Department, University of Cukurova, 01330 Adana (Turkey); Physics Department, University of Nigde, 51100 Nigde (Turkey); Akguel, G. [Physics Department, University of Cukurova, 01330 Adana (Turkey); Ufuktepe, Y., E-mail: ufuk@cu.edu.t [Physics Department, University of Cukurova, 01330 Adana (Turkey); Nordlund, D. [Stanford Synchrotron Radiation Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025 (United States)

    2010-10-22

    We report the electronic structure of chromium (Cr) thin films depending on its thickness using two measures, total electron yield (TEY) and transmission yield mode. The Cr L edge X-ray absorption spectroscopy (XAS) spectrum shows strong thickness dependence with broader line widths observed for L{sub 2,3} edge peaks for thinner films. The white line ratio (L{sub 3}/L{sub 2}) was found to be 1.25 from the integrated area under each L{sub 3} and L{sub 2} peak and 1.36 from the ratio of the amplitudes of each L{sub 3} and L{sub 2} peak after the deconvolution. Additionally, we show that full-width at half-maximum (FWHM) at the L{sub 2} and L{sub 3} edges and the branching ratio of Cr change as a function of film thickness and these are discussed in detail. Using L{sub 2,3} resonance intensity variation as a function of film thickness we calculated the electron escape depth and X-ray attenuation length in Cr. Comparing our results with the literature, there was good agreement for the L{sub 3}-L{sub 2} ratio although the detailed shape can show additional solid state and atomic effects.

  16. Electrochemical characterization of YSZ thick films deposited by dip-coating process

    Energy Technology Data Exchange (ETDEWEB)

    Mauvy, F.; Lalanne, C.; Bassat, J.M.; Grenier, J.C. [Institut de Chimie de la Matiere Condensee de Bordeaux ICMCB - CNRS, Universite Bordeaux 1, 87, av. du Dr. A. Schweitzer, 33 608 Pessac-Cedex (France); Lenormand, P.; Ansart, F. [Centre Interuniversitaire de Recherche et d' Ingenierie et d' Ingenierie des Materiaux, CIRIMAT, Universite Paul Sabatier, Bat. 2R1, 118 route de Narbonne, 31062 Toulouse Cedex (France)

    2007-09-27

    Yttria stabilized zirconia (YSZ, 8% Y{sub 2}O{sub 3}) thick films were coated on dense alumina substrates by a dip-coating process. The suspension was obtained by addition of a polymeric matrix in a stable suspension of commercial YSZ (Tosoh) powders dispersed in an azeotropic mixture MEK-EtOH. The suspension composition was improved by the addition of YSZ Tosoh particles encapsulated by zirconium alkoxide sol containing yttrium nitrate which are the precursors of the 8-YSZ oxide. This optimal formulation allowed preparing, via a dip-coating process, thick films which were, after thermal treatment, homogeneous, dense and crack-free. A specific method was performed to measure the electrical conductivity, i.e. to determine the ionic conductivity of the film: it uses the four-point probe technique combined with ac impedance spectroscopy. The good agreement between the classical two-electrode measurements performed on YSZ pellets and the four-electrode ones performed on YSZ films allows concluding that this method is relevant for characterizing the transport properties of thick films. (author)

  17. Electrochemical characterization of YSZ thick films deposited by dip-coating process

    Science.gov (United States)

    Mauvy, F.; Lenormand, P.; Lalanne, C.; Ansart, F.; Bassat, J. M.; Grenier, J. C.; Groupement de Recherches Cnrs "Pacte", Gdr 2985

    Yttria stabilized zirconia (YSZ, 8% Y 2O 3) thick films were coated on dense alumina substrates by a dip-coating process. The suspension was obtained by addition of a polymeric matrix in a stable suspension of commercial YSZ (Tosoh) powders dispersed in an azeotropic mixture MEK-EtOH. The suspension composition was improved by the addition of YSZ Tosoh particles encapsulated by zirconium alkoxide sol containing yttrium nitrate which are the precursors of the 8-YSZ oxide. This optimal formulation allowed preparing, via a dip-coating process, thick films which were, after thermal treatment, homogeneous, dense and crack-free. A specific method was performed to measure the electrical conductivity, i.e. to determine the ionic conductivity of the film: it uses the four-point probe technique combined with ac impedance spectroscopy. The good agreement between the classical two-electrode measurements performed on YSZ pellets and the four-electrode ones performed on YSZ films allows concluding that this method is relevant for characterizing the transport properties of thick films.

  18. Determination of the solvation film thickness of dispersed particles with the method of Einstein viscosity equation

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    The dispersion of a solid particle in a liquid may lead to the formation of solvation film onthe particle surface, which can strongly increase the repulsive force between particles and thus strongly affect the stability of dispersions. The solvation film thickness, which varies with the variation of the property of suspension particles and solutions, is one of the most important parameters of the solvation film, and is also one of the most difficult parameters that can be measured accurately. In this paper, a method, based on the Einstein viscosity equation of dispersions, for determining the solvation film thickness of particles is developed. This method was tested on two kinds of silica spherical powders (namely M1 and M2) dispersed in ethyl alcohol, in water, and in a water-ethyl alcohol mixture (1:1 by volume) through measuring the relative viscosity of dispersions of the particles as a function of the volume fraction of the dry particles in the dispersion, and of the specific surface area and the density of the particles. The calculated solvation film thicknesses on M1 are 7.48, 18.65 and 23.74 nm in alcohol, water and the water-ethyl alcohol mixture, 12.41, 12.71 and 13.13 nm on M2 in alcohol, water and the water-ethyl alcohol mixture, respectively.

  19. Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors

    Science.gov (United States)

    Gao, Xu; Lin, Meng-Fang; Mao, Bao-Hua; Shimizu, Maki; Mitoma, Nobuhiko; Kizu, Takio; Ou-Yang, Wei; Nabatame, Toshihide; Liu, Zhi; Tsukagoshi, Kazuhito; Wang, Sui-Dong

    2017-01-01

    Decreasing the active layer thickness has been recently reported as an alternative way to achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations. However, the correlation between the active layer thickness and device resistivity to environmental changes is still unclear, which is important for the optimized design of oxide thin-film transistors. In this work, the ambient gas stability of IGZO thin-film transistors is found to be strongly correlated to the IGZO thickness. The TFT with the thinnest IGZO layer shows the highest intrinsic electron mobility in a vacuum, which is greatly reduced after exposure to O2/air. The device with a thick IGZO layer shows similar electron mobility in O2/air, whereas the mobility variation measured in the vacuum is absent. The thickness dependent ambient gas stability is attributed to a high-mobility region in the IGZO surface vicinity with less sputtering-induced damage, which will become electron depleted in O2/air due to the electron transfer to adsorbed gas molecules. The O2 adsorption and deduced IGZO surface band bending is demonstrated by the ambient-pressure x-ray photoemission spectroscopy results.

  20. Pad-printed thick-film transducers for high-frequency and high-power applications

    Science.gov (United States)

    Wolny, Wanda W.; Ketterling, Jeffrey A.; Levassort, Franck; Lou-Moeller, Rasmus; Filoux, Erwan; Mamou, Jonathan; Silverman, Ronald H.; Lethiecq, Marc

    2011-03-01

    High-frequency-ultrasound transducers are widely used but are typically based either on planar piezoceramic sections that are lapped down to smaller thicknesses or on piezopolymers that may be deformed into more complex geometries. Piezoceramics then require dicing to obtain arrays or can be fractured into spherical geometries to achieve focusing. Piezopolymers are not as efficient for very small element sizes and are normally available only in discrete thicknesses. Thick-film (TF) transducers provide a means of overcoming these limits because the piezoelectric film is deposited with the required thickness, size and geometry, thus avoiding any subsequent machining. Thick-film transducers offer the potential of a wide range of geometries such as single-elements and annular or linear arrays. Here, a single-element focused transducer was developed using a piezoceramic composition adapted to high-power operation which is commonly used at standard MHz frequencies. After fabrication, the transducer was characterized. Using specific transmit-receive electronics and a water tank adapted to high-frequency devices, the transducer was excited using a short pulse to evaluate its bandwidth and imaging capabilities. Finally, it was excited by a one-period sine wave using several power levels to evaluate its capacity to produce high-intensity focused ultrasound at frequencies over 20 MHz.

  1. Effect of thickness-dependent microstructure on the out-of-plane hole mobility in poly(3-hexylthiophene) films.

    Science.gov (United States)

    Huang, Bingyuan; Glynos, Emmanouil; Frieberg, Bradley; Yang, Hengxi; Green, Peter F

    2012-10-24

    Regioregular poly(3-hexylthiophene) (RR-P3HT) is a widely used donor material for bulk heterojunction polymer solar cells. While much is known about the structure and properties of RR-P3HT films, important questions regarding hole mobilities in this material remain unresolved. Measurements of the out-of-plane hole mobilities, μ, of RR-P3HT films have been restricted to films in the thickness regime on the order of micrometers, beyond that generally used in solar cells, where the film thicknesses are typically 100 to 200 nm. Studies of in-plane carrier mobilities have been conducted in thinner films, in the thickness range 100-200 nm. However, the in-plane and out-of-plane hole mobilities in RR-P3HT can be significantly different. We show here that the out-of-plane hole mobilities in neat RR-P3HT films increase by an order of magnitude, from 10(-4) cm(2)/V·s, for a 80 nm thick film, to a value of 10(-3) cm(2)/V·s for films thicker than 700 nm. Through a combination of morphological characterization and simulations, we show that the thickness dependent mobilities are not only associated with the differences between the average morphologies of thick films and thin films, but specifically associated with changes in the local morphology of films as a function of distance from the interfaces.

  2. Screen printed PZT/PZT thick film bimorph MEMS cantilever device for vibration energy harvesting

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2012-01-01

    We present a microelectromechanical system (MEMS) based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. Most piezoelectric energy harvesting devices use a cantilever beam of a non piezoelectric material as support beneath or in-between the piezoelectric...... materials; it provides mechanical support but it also reduces the power output. In our device we replace the support material with another layer of the piezoelectric material. With the absence of an inactive mechanical support all stresses induced by vibrations will be harvested by the active piezoelectric...... elements. We show experimental results from two types PZT/PZT harvesting devices, one where the Pb(ZrxTi1−x)O3 (PZT) thick films are high pressure treated during the fabrication and the other where the treatment is omitted. We find that with the high pressure treatment prior to PZT sintering, the films...

  3. Cellular-foam polypropylene ferroelectrets with increased film thickness and reduced resonance frequency

    Science.gov (United States)

    Sborikas, Martynas; Wegener, Michael

    2013-12-01

    Ferroelectrets are piezoelectric materials suitable for acoustic applications such as airborne ultrasonic transducers. Typical ferroelectrets exhibit resonance frequencies in the high kHz to low MHz range. In order to decrease the transducer resonance frequencies to the low kHz range, processes such as gas-diffusion expansion and electric charging were adjusted to cellular films which are initially twice as thick as in earlier studies. The demonstrated film expansion and electric charging lead to mechanically soft cellular structures which show high piezoelectric activities with coefficients up to 130 pC/N. Due to the simultaneously increased film thicknesses, the resonance frequencies are lowered down to about 233 kHz.

  4. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    Science.gov (United States)

    Wang, Qi; Stradins, Paul; Teplin, Charles; Branz, Howard M.

    2009-10-13

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  5. Field-Assisted and Thermionic Contributions to Conductance in SnO Thick-Films

    Directory of Open Access Journals (Sweden)

    C. Malagù

    2009-01-01

    Full Text Available A deep analysis of conductance in nanostructured SnO2 thick films has been performed. A model for field-assisted thermionic barrier crossing is being proposed to explain the film conductivity. The model has been applied to explain the behavior of resistance in vacuum of two sets of nanostructured thick-films with grains having two well-distinct characteristic radii (=25 nm and =125 nm. In the first case the grain radius is shorter than the depletion region width, a limit at which overlapping of barriers takes place, and in the second case it is longer. The behavior of resistance in the presence of dry air has been explained through the mechanism of barrier modulation through gas chemisorption.

  6. Hard X-rays for processing hybrid organic-inorganic thick films.

    Science.gov (United States)

    Jiang, Yu; Carboni, Davide; Pinna, Alessandra; Marmiroli, Benedetta; Malfatti, Luca; Innocenzi, Plinio

    2016-01-01

    Hard X-rays, deriving from a synchrotron light source, have been used as an effective tool for processing hybrid organic-inorganic films and thick coatings up to several micrometres. These coatings could be directly modified, in terms of composition and properties, by controlled exposure to X-rays. The physico-chemical properties of the coatings, such as hardness, refractive index and fluorescence, can be properly tuned using the interaction of hard X-rays with the sol-gel hybrid films. The changes in the microstructure have been correlated especially with the modification of the optical and the mechanical properties. A relationship between the degradation rate of the organic groups and the rise of fluorescence from the hybrid material has been observed; nanoindentation analysis of the coatings as a function of the X-ray doses has shown a not linear dependence between thickness and film hardness.

  7. Microstructural evolution in NaNbO3-based antiferroelectrics

    Science.gov (United States)

    Guo, Hanzheng; Shimizu, Hiroyuki; Randall, Clive A.

    2015-11-01

    Our recent study found that CaZrO3 doping can effectively enhance the antiferroelectric P phase in NaNbO3 ceramics, leading to a double polarization hysteresis loop characteristic of a reversible antiferroelectric ↔ ferroelectric phase transition [Shimizu et al., Dalton Trans. 44, 10763 (2015)]. Here, a thorough transmission electron microscope study was performed to illustrate the CaZrO3 doping-assisted antiferroelectricity stabilization. In parallel to the bright-field imaging and selected area electron diffraction from multiple zone axes, detailed dark-field imaging was utilized to determine the superlattice structural origins, from either oxygen octahedral tilting or antiparallel cation displacements. By analogy with Pb(Zr1-xTix)O3 and rare-earth doped BiFeO3 systems, the chemical substitutions are such as to an induced polar-to-antipolar transition that is consistent with a tolerance factor reduction. The resultant chemical pressure has a similar effect to the compressive hydrostatic pressure where the antiferroelectric state is favored over the ferroelectric state.

  8. Film thickness effect on the performance of small molecular solar cell

    Institute of Scientific and Technical Information of China (English)

    LIN Hui; YU Jun-sheng; HUANG Jiang; JIANG Ya-dong

    2008-01-01

    An efficient organic photovoltaic (OPV) cell with an indium-tin-oxide/CuPc/C60/Ag structure has been investigated by changing the film thickness of organic layers. A high open-circuit voltage (Voc) of 0.5 V, a short-circuit current density (JSC) of 5.81 mA/cm2, and a high power conversion efficiency (ηp) of 1.2% were achieved at an optimum film thickness. The results demonstrate that material thickness is an important factor to cell optimization, especially for maximizing the absorption rate as well as reducing the cell resistance. Experimental results also indicate that the power conversion efficiency increases from 1.2% to 1.54% as a BCP exciton blocking layer of 10 nm is introduced.

  9. Real-time dielectric-film thickness measurement system for plasma processing chamber wall monitoring.

    Science.gov (United States)

    Kim, Jin-Yong; Chung, Chin-Wook

    2015-12-01

    An in-situ real-time processing chamber wall monitoring system was developed. In order to measure the thickness of the dielectric film, two frequencies of small sinusoidal voltage (∼1 V) signals were applied to an electrically floated planar type probe, which is positioned at chamber wall surface, and the amplitudes of the currents and the phase differences between the voltage and current were measured. By using an equivalent sheath circuit model including a sheath capacitance, the dielectric thickness can be obtained. Experiments were performed in various plasma condition, and reliable dielectric film thickness was obtained regardless of the plasma properties. In addition, availability in commercial chamber for plasma enhanced chemical vapor deposition was verified. This study is expected to contribute to the control of etching and deposition processes and optimization of periodic maintenance in semiconductor manufacturing process.

  10. Analysis of variance on thickness and electrical conductivity measurements of carbon nanotube thin films

    Science.gov (United States)

    Li, Min-Yang; Yang, Mingchia; Vargas, Emily; Neff, Kyle; Vanli, Arda; Liang, Richard

    2016-09-01

    One of the major challenges towards controlling the transfer of electrical and mechanical properties of nanotubes into nanocomposites is the lack of adequate measurement systems to quantify the variations in bulk properties while the nanotubes were used as the reinforcement material. In this study, we conducted one-way analysis of variance (ANOVA) on thickness and conductivity measurements. By analyzing the data collected from both experienced and inexperienced operators, we found some operation details users might overlook that resulted in variations, since conductivity measurements of CNT thin films are very sensitive to thickness measurements. In addition, we demonstrated how issues in measurements damaged samples and limited the number of replications resulting in large variations in the electrical conductivity measurement results. Based on this study, we proposed a faster, more reliable approach to measure the thickness of CNT thin films that operators can follow to make these measurement processes less dependent on operator skills.

  11. Thickness of Residual Wetting Film in Liquid-Liquid Displacement in Capillary Channels

    Science.gov (United States)

    Beresnev, I. A.; Gaul, W.; Vigil, D.

    2010-12-01

    Core-annular flow is common in nature, representing, for example, how streams of oil, surrounded by water, move in petroleum reservoirs. Oil, typically a non-wetting fluid, tends to occupy the middle (core) part of a channel, while water forms a surrounding wall-wetting film. What is the thickness of this wetting film? Understanding this question may determine the ultimate oil recovery. A classic theory has been in existence for nearly 50 years offering a solution, although in a controversial manner, for moving gas bubbles. On the other hand, an acceptable, experimentally verified theory for a body of one liquid flowing in another has not been available. We develop a hydrodynamic, testable theory providing an explicit relationship between the thickness of the wetting film and fluid properties for a blob of one fluid moving in another, with neither phase being gas. In its relationship to the capillary number Ca, the thickness of the film is predicted to be proportional to Ca2 at lower Ca and to level off at a constant value of about 20 % the channel radius at higher Ca. The thickness of the film is deduced to be approximately unaffected by the viscosity ratio of the fluids. We have conducted our own laboratory experiments and compiled experimental data from other studies, all of which are mutually consistent and confirm the salient features of the theory. At the same time, the classic law, originally deduced for films surrounding moving gas bubbles but often believed to hold for liquids as well, fails to explain the observations.

  12. Novel method for the measurement of liquid film thickness during fuel spray impingement on surfaces.

    Science.gov (United States)

    Henkel, S; Beyrau, F; Hardalupas, Y; Taylor, A M K P

    2016-02-01

    This paper describes the development and application of a novel optical technique for the measurement of liquid film thickness formed on surfaces during the impingement of automotive fuel sprays. The technique makes use of the change of the light scattering characteristics of a metal surface with known roughness, when liquid is deposited. Important advantages of the technique over previously established methods are the ability to measure the time-dependent spatial distribution of the liquid film without a need to add a fluorescent tracer to the liquid, while the measurement principle is not influenced by changes of the pressure and temperature of the liquid or the surrounding gas phase. Also, there is no need for non-fluorescing surrogate fuels. However, an in situ calibration of the dependence of signal intensity on liquid film thickness is required. The developed method can be applied to measure the time-dependent and two-dimensional distribution of the liquid fuel film thickness on the piston or the liner of gasoline direct injection (GDI) engines. The applicability of this technique was evaluated with impinging sprays of several linear alkanes and alcohols with different thermo-physical properties. The surface temperature of the impingement plate was controlled to simulate the range of piston surface temperatures inside a GDI engine. Two sets of liquid film thickness measurements were obtained. During the first set, the surface temperature of the plate was kept constant, while the spray of different fuels interacted with the surface. In the second set, the plate temperature was adjusted to match the boiling temperature of each fuel. In this way, the influence of the surface temperature on the liquid film created by the spray of different fuels and their evaporation characteristics could be demonstrated.

  13. Anti-Ferroelectric Ceramics for High Energy Density Capacitors

    Directory of Open Access Journals (Sweden)

    Aditya Chauhan

    2015-11-01

    Full Text Available With an ever increasing dependence on electrical energy for powering modern equipment and electronics, research is focused on the development of efficient methods for the generation, storage and distribution of electrical power. In this regard, the development of suitable dielectric based solid-state capacitors will play a key role in revolutionizing modern day electronic and electrical devices. Among the popular dielectric materials, anti-ferroelectrics (AFE display evidence of being a strong contender for future ceramic capacitors. AFE materials possess low dielectric loss, low coercive field, low remnant polarization, high energy density, high material efficiency, and fast discharge rates; all of these characteristics makes AFE materials a lucrative research direction. However, despite the evident advantages, there have only been limited attempts to develop this area. This article attempts to provide a focus to this area by presenting a timely review on the topic, on the relevant scientific advancements that have been made with respect to utilization and development of anti-ferroelectric materials for electric energy storage applications. The article begins with a general introduction discussing the need for high energy density capacitors, the present solutions being used to address this problem, and a brief discussion of various advantages of anti-ferroelectric materials for high energy storage applications. This is followed by a general description of anti-ferroelectricity and important anti-ferroelectric materials. The remainder of the paper is divided into two subsections, the first of which presents various physical routes for enhancing the energy storage density while the latter section describes chemical routes for enhanced storage density. This is followed by conclusions and future prospects and challenges which need to be addressed in this particular field.

  14. Fabrication and characterization of micromachined high-frequency tonpilz transducers derived by PZT thick films.

    Science.gov (United States)

    Zhou, Qifa; Cannata, Jonathan M; Meyer, Richard J; van Tol, David J; Tadigadapa, Srinivas; Hughes, W Jack; Shung, K Kirk; Trolier-McKinstry, Susan

    2005-03-01

    Miniaturized tonpilz transducers are potentially useful for ultrasonic imaging in the 10 to 100 MHz frequency range due to their higher efficiency and output capabilities. In this work, 4 to 10-microm thick piezoelectric thin films were used as the active element in the construction of miniaturized tonpilz structures. The tonpilz stack consisted of silver/lead zirconate titanate (PZT)/lanthanum nickelate (LaNiO3)/silicon on insulator (SOI) substrates. First, conductive LaNiO3 thin films, approximately 300 nm in thickness, were grown on SOI substrates by a metalorganic decomposition (MOD) method. The room temperature resistivity of the LaNiO3 was 6.5 x 10(-6) omega x m. Randomly oriented PZT (52/48) films up to 7-microm thick were then deposited using a sol-gel process on the LaNiO3-coated SOI substrates. The PZT films with LaNiO3 bottom electrodes showed good dielectric and ferroelectric properties. The relative dielectric permittivity (at 1 kHz) was about 1030. The remanent polarization of PZT films was larger than 26 microC/cm2. The effective transverse piezoelectric e31,f coefficient of PZT thick films was about -6.5 C/m2 when poled at -75 kV/cm for 15 minutes at room temperature. Enhanced piezoelectric properties were obtained on poling the PZT films at higher temperatures. A silver layer about 40-microm thick was prepared by silver powder dispersed in epoxy and deposited onto the PZT film to form the tail mass of the tonpilz structure. The top layers of this wafer were subsequently diced with a saw, and the structure was bonded to a second wafer. The original silicon carrier wafer was polished and etched using a Xenon difluoride (XeF2) etching system. The resulting structures showed good piezoelectric activity. This process flow should enable integration of the piezoelectric elements with drive/receive electronics.

  15. Structural, morphological, electrical, and optical properties of silver thin films of varying thickness deposited on cupric oxide

    Science.gov (United States)

    Hajakbari, Fatemeh; Shafieinejad, Farzaneh

    2016-03-01

    In this investigation, silver (Ag) films of varying thickness (25-100 nm) were grown on cupric oxide (CuO) on silicon and quartz. The CuO preparation was carried out by the thermal oxidation annealing of copper (Cu) thin films deposited by DC magnetron sputtering. The physical properties of the prepared films were studied by different techniques. Rutherford backscattering spectroscopy (RBS) analysis indicated that the Ag film thickness was about 25-100 nm. X-ray diffraction (XRD) results showed that by increasing Ag thickness, the film crystallinity was improved. Also, atomic force microscopy (AFM) and scanning electron microscopy (SEM) results demonstrated that the surface morphology and the grain size were affected by the Ag film thickness. Furthermore, the electrical resistivity of films determined by four-point probe measurements versus the Ag film thickness was discussed. A reduction in the optical band gap energy of CuO is observed from 1.51 to 1.42 eV with an increase in Ag film thickness to 40 nm in Ag/CuO films.

  16. An experimental evaluation of the Hamrock and Dowson minimum film thickness equation for fully flooded EHD point contacts

    Science.gov (United States)

    Koye, K. A.; Winer, W. O.

    1980-08-01

    Fifty-seven measurements of the minimum lubricant film separating the elastohydrodynamically lubricated point contact of a steel crowned roller and a flat sapphire disk were made by an optical interferometry technique. The data collected were used to evaluate the Hamrock and Dowson minimum EHD film thickness model over a practical range of contact ellipticity ratio where the major axis of the contact ellipse is aligned both parallel and perpendicular to the direction of motion. A statistical analysis of the measured film thickness data showed that on the average the experimental data averaged 30 percent greater film thickness than the Hamrock and Dowson model predicts.

  17. Thickness Dispersion of Surface Plasmon of Ag Nano-thin Films: Determination by Ellipsometry Iterated with Transmittance Method

    Science.gov (United States)

    Gong, Junbo; Dai, Rucheng; Wang, Zhongping; Zhang, Zengming

    2015-03-01

    Effective optical constants of Ag thin films are precisely determined with effective thickness simultaneously by using an ellipsometry iterated with transmittance method. Unlike the bulk optical constants in Palik's database the effective optical constants of ultrathin Ag films are found to strongly depend on the thickness. According to the optical data two branches of thickness dispersion of surface plasmon energy are derived and agreed with theoretical predication. The thickness dispersion of bulk plasmon is also observed. The influence of substrate on surface plasmon is verified for the first time by using ellipsometry. The thickness dependent effective energy loss function is thus obtained based on this optical method for Ag ultrathin films. This method is also applicable to other ultrathin films and can be used to establish an effective optical database for ultrathin films.

  18. Thickness dependence of the magnetic properties of high-coercive Pr-Fe-B thin films with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Yang, F. [Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang Liaoning 110016 (China); Liu, W. [Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang Liaoning 110016 (China)], E-mail: wliu@imr.ac.cn; Cui, W.B.; Feng, J.N.; Zhang, Y.Q.; Zhang, Z.D [Shenyang National Laboratory for Materials Science, Institute of Metal Research and International Centre for Materials Physics, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang Liaoning 110016 (China)

    2008-10-01

    The magnetic properties of Pr-Fe-B films with perpendicular magnetic anisotropy have been studied as a function of thickness varying from 10 to 1200 nm. The crucial thickness for forming the Pr{sub 2}Fe{sub 14}B phase is estimated to be about 25 nm in our study, and the perpendicular anisotropy shows a trend to vanish for thick films. The coercivity of the films initially increases with increasing film thickness, gradually reaching a value which is near the value for bulk material. The magnetic domain size increases with increasing thickness. The surface morphology, the roughness and the domain structure of the films have been investigated by means of atomic-force microscopy and magnetic-force microscopy.

  19. Alignment of muscle precursor cells on the vertical edges of thick carbon nanotube films.

    Science.gov (United States)

    Holt, Ian; Gestmann, Ingo; Wright, Andrew C

    2013-10-01

    The development of scaffolds and templates is an essential aspect of tissue engineering. We show that thick (>0.5 mm) vertically aligned carbon nanotube films, made by chemical vapour deposition, can be used as biocompatible substrates for the directional alignment of mouse muscle cells where the cells grow on the exposed sides of the films. Ultra high resolution scanning electron microscopy reveals that the films themselves consist mostly of small diameter (10 nm) multi-wall carbon nanotubes of wavy morphology with some single wall carbon nanotubes. Our findings show that for this alignment to occur the nanotubes must be in pristine condition. Mechanical wiping of the films to create directional alignment is detrimental to directional bioactivity. Larger areas for study have been formed from a composite of multiply stacked narrow strips of nanotubes wipe-transferred onto elastomer supports. These composite substrates appear to show a useful degree of alignment of the cells.

  20. Quartz Microbalance Study of 400-angstrom Thick Films near the lambda Point

    Science.gov (United States)

    Chan, Moses H. W.

    2003-01-01

    In a recent measurement we observed the thinning of an adsorbed helium film induced by the confinement of critical fluctuations a few millikelvin below the lambda point. A capacitor set-up was used to measure this Casimir effect. In this poster we will present our measurement of an adsorbed helium film of 400 angstroms near the lambda point with a quartz microbalance. For films this thick, we must take into account the non-linear dynamics of the shear waves in the fluid. In spite of the added complications, we were able to confirm the thinning of the film due to the Casimir effect and the onset of the superfluid transition. In addition, we observe a sharp anomaly at the bulk lambda point, most likely related to critical dissipation of the first sound. This work is carried out in collaboration with Rafael Garcia, Stephen Jordon and John Lazzaretti. This work is funded by NASA's Office of Biological and Physical Research under grant.

  1. Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    Glenda Biasotto

    2011-03-01

    Full Text Available Bi0.85La0.15FeO3 (BLFO thin films were deposited on Pt(111/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.

  2. The damping model for sea waves covered by oil films of a finite thickness

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yanmin; ZHANG Jie; WANG Yunhua; MENG Junmin; ZHANG Xi

    2015-01-01

    In combination with a wave action balance equation, a damping model for sea waves covered by oil films of a finite thickness is proposed. The damping model is not only related to the physical parameters of the oil film, but also related to environment parameters. Meanwhile, the parametric analyses have been also conducted to understand the sensitivity of the damping model to these parameters. And numerical simulations demonstrate that a kinematic viscosity, a surface/interfacial elasticity, a thickness, and a fractional filling factor cause more significant effects on a damping ratio than the other physical parameters of the oil film. From the simulation it is also found that the influences induced by a wind speed and a wind direction are also remarkable. On the other hand, for a thick emulsified oil film, the damping effect on the radar signal induced by the reduction of an effective dielectric constant should also be taken into account. The simulated results are compared with the damping ratio evaluated by the 15 ENVISAT ASAR images acquired during the Gulf of Mexico oil spill accident.

  3. Thickness-dependent quantum oscillations in Cd3As2 thin films

    Science.gov (United States)

    Cheng, Peihong; Zhang, Cheng; Liu, Yanwen; Yuan, Xiang; Song, Fengqi; Sun, Qingqing; Zhou, Peng; Zhang, David Wei; Xiu, Faxian

    2016-08-01

    Cd3As2 is a new kind of three-dimensional (3D) Dirac semimetal with extraordinary carrier mobility, which can be viewed as ‘3D graphene’. Theory predicts that Cd3As2 can be driven into a quantum spin Hall insulator with a sizeable band gap by reducing dimensionality. In this letter, we report the systematic growth of undoped Cd3As2 thin films with the thickness of 50 ˜ 900 nm by molecular beam epitaxy. The magneto-transport study on these single-crystalline films shows a high mobility in the range of 3.8 ˜ 9.1 × 103 cm2 · V-1 · s-1 and a relative low electron concentration of 1 ˜ 8 × 1017 cm-3. Significantly, a thickness-induced semimetal-to-semiconductor transition was observed. In contrast with what is expected in the bulk counterpart, the 50 nm-thick Cd3As2 film exhibits semiconducting characteristics, witnessing an emerged bandgap opening when the dimensionality is reduced. Finally, the analyses on the temperature- and angular-dependence of magneto-resistance and Shubnikov-de Hass oscillations reveal a non-trivial to trivial Berry’s phase transition that is in connection with the reduced dimensionality. Our results demonstrate that the Cd3As2 thin films with unique electronic structure and high mobility hold promise for Dirac semimetal device applications.

  4. Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111 Si Substrate: The Effect of Film Thickness

    Directory of Open Access Journals (Sweden)

    Cheng-Chang Yu

    2014-01-01

    Full Text Available Indium-nitrogen codoped zinc oxide (INZO thin films were fabricated by spray pyrolysis deposition technique on n-(111 Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM and X-ray diffraction (XRD. The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002 to (101 as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1 and hole concentration around 3×1019 cm−3 can be achieved with film thickness less than 385 nm. The n-type conduction with concentration 1×1020 cm−3 is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.

  5. Perfect light trapping in nanoscale thickness semiconductor films with resonant back reflector and spectrum-splitting structures

    CERN Document Server

    Liu, Jiang-Tao; Yang, Wen; Li, Jun

    2014-01-01

    The optical absorption of nanoscale thickness semiconductor films on top of light-trapping structures based on optical interference effects combined with spectrum-splitting structures is theoretically investigated. Nearly perfect absorption over a broad spectrum range can be achieved in $<100$ nm thick films on top of one-dimensional photonic crystal or metal films. This phenomenon can be attributed to interference induced photonic localization, which enhances the absorption and reduces the reflection of the films. Perfect solar absorption and low carrier thermalization loss can be achieved when the light-trapping structures with wedge-shaped spacer layer or semiconductor films are combined with spectrum-splitting structures.

  6. The relationship between refractive index-energy gap and the film thickness effect on the characteristic parameters of CdSe thin films

    Science.gov (United States)

    Akaltun, Yunus; Yıldırım, M. Ali; Ateş, Aytunç; Yıldırım, Muhammet

    2011-05-01

    CdSe thin films were deposited on glass substrates using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The relationship between refractive index and energy bandgap was investigated. The film thickness effect on the structural, morphological, optical and electrical properties of CdSe thin films was investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibit polycrystalline nature with hexagonal structure and are covered well with glass substrates. The crystalline and surface properties of the films improved with increasing film thickness. The optical absorption studies revealed that the films are found to be a direct allowed transition. The energy bandgap values were changed from 1.93 to 1.87 eV depending on the film thickness. The electron effective mass (m e*/m o), refractive index ( n), optical static and high frequency dielectric constant (ɛ o, ɛ ∞) values were calculated by using the energy bandgap values as a function of the film thickness. The resistivity of the films changed between 10 6 and 10 2 Ω-cm with increasing film thickness at room temperature.

  7. Orientation and thickness dependence of magnetization at the interfacesof highly spin-polarized manganite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chopdekar, Rajesh V.; Arenholz, Elke; Suzuki, Y.

    2008-08-18

    We have probed the nature of magnetism at the surface of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films. The spin polarization of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films is not intrinsically suppressed at all surfaces and interfaces but is highly sensitive to both the epitaxial strain state as well as the substrate orientation. Through the use of soft x-ray spectroscopy, the magnetic properties of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces have been investigated and compared to bulk magnetometry and resistivity measurements. The magnetization of (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces are more bulk-like as a function of thickness whereas the magnetization at the (001)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interface is suppressed significantly below a layer thickness of 20 nm. Such findings are correlated with the biaxial strain state of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films; for a given film thickness it is the tetragonal distortion of (001) La{sub 0.7}Sr{sub 0.3}MnO{sub 3} that severely impacts the magnetization, whereas the trigonal distortion for (111)-oriented films and monoclinic distortion for (110)-oriented films have less of an impact. These observations provide evidence that surface magnetization and thus spin polarization depends strongly on the crystal surface orientation as well as epitaxial strain.

  8. Thickness determination of large-area films of yttria-stabilized zirconia produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Pryds, N.; Christensen, Bo Toftmann; Bilde-Sørensen, Jørgen;

    2006-01-01

    Films of yuria-stabilized zirconia (YSZ) on a polished silicon substrate of diameter up to 125 mm have been produced in a large-area pulsed laser deposition (PLD) setup under typical PLD conditions. The film thickness over the full film area has been determined by energy-dispersive Xray spectrome...

  9. Evidence for improvement of critical current by Ag in YBaCuO-Ag thick films

    Science.gov (United States)

    Dwir, B.; Kellett, B.; Mieville, L.; Pavuna, D.

    1991-04-01

    The evidence is reported for enhancement of critical current density J(c) in YBa2Cu3O(7-delta) thick films with the addition of Ag, which is correlated with improvements in structural properties. An improvement of 50 percent in J(c) (up to about 500 A/sq cm at T = 4.2 K) was obtained in films made from YBCO + 60 wt pct Ag powder, fabricated by the spin-on technique on (100) SrTiO3, which is correlated with improvements in structure. The resulting films are 10 microns thick, uniform, partially textured, and show good adherence. The critical temperature Tc is improved by the addition of Ag, and a reduction in the density of microcracks and in the amount of secondary phases in the sintered films was observed. Normal-state resistivity is reduced by almost three orders of magnitude, making these films potentially useful for electronic applications in interconnects and novel hybrid circuits.

  10. Evidence for improvement of critical current by Ag in YBaCuO-Ag thick films

    Energy Technology Data Exchange (ETDEWEB)

    Dwir, B.; Kellett, B.; Mieville, L.; Pavuna, D. (Institute of Micro- and Opto-electronics, Department of Physics, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland (CH))

    1991-04-15

    The evidence is reported for enhancement of critical current density {ital J}{sub {ital c}} in YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} thick films with the addition of Ag, which is correlated with improvements in structural properties. An improvement of 50% in {ital J}{sub {ital c}} (up to {similar to}500 A/cm{sup 2} at {ital T}=4.2 K) was obtained in films made from YBCO+60wt % Ag powder, fabricated by the spin-on technique on (100) SrTiO{sub 3}, which is correlated with improvements in structure. The resulting films are 10 {mu}m thick, uniform, partially textured, and show good adherence. The critical temperature {ital T}{sub {ital c}} is improved by the addition of Ag, and a reduction in the density of microcracks and in the amount of secondary phases in the sintered films was observed. Normal-state resistivity is reduced by almost three orders of magnitude, making these films potentially useful for electronic applications in interconnects and novel hybrid circuits.

  11. Thickness, stability and contact angle of liquid films on and inside nanofibres, nanotubes and nanochannels.

    Science.gov (United States)

    Mattia, Davide; Starov, Victor; Semenov, Sergey

    2012-10-15

    While the stability of liquid films on substrates is a classical topic of colloidal science, the availability of nanostructured materials, such as nanotubes, nanofibres and nanochannels, has raised the question of how the stability of liquid films and their wetting behaviour is affected by nanoscale confinement. This paper will present the conditions for the stability of liquid films on and inside cylindrical solid substrates with nanometre scale characteristic dimensions. It is shown that the stability is determined by an effective disjoining/conjoining pressure isotherm which differs from the corresponding disjoining/conjoining pressure isotherm of flat liquid films on flat solid substrates. From the former, the equilibrium contact angles of drops on an outer or inner surface of a cylindrical capillary have been calculated as a function of surface curvature, showing that the expressions for equilibrium contact angles vary for different geometries, in view of the difference in thickness of the film of uniform thickness with which the bulk liquid (drops or menisci) is at equilibrium. These calculations have been extended to the case of glass nanocapillaries and carbon nanotubes, finding good agreement with experimental results in the literature.

  12. Antiferroelectric-to-Ferroelectric Switching in CH3NH3PbI3 Perovskite and Its Potential Role in Effective Charge Separation in Perovskite Solar Cells

    Science.gov (United States)

    Sewvandi, Galhenage A.; Hu, Dengwei; Chen, Changdong; Ma, Hao; Kusunose, Takafumi; Tanaka, Yasuhiro; Nakanishi, Shunsuke; Feng, Qi

    2016-08-01

    Perovskite solar cells (PSCs) often suffer from large performance variations which impede to define a clear charge-transfer mechanism. Ferroelectric polarization is measured numerically using CH3NH3PbI3 (M A PbI3 ) pellets to overcome the measurement issues such as pinholes and low uniformity of thickness, etc., with M A PbI3 thin films. M A PbI3 perovskite is an antiferroelectric semiconductor which is different from typical semiconducting materials and ferroelectric materials. The effect of polarization carrier separation on the charge-transfer mechanism in the PSCs is elucidated by using the results of ferroelectric and structural studies on the perovskite. The ferroelectric polarization contributes to an inherent carrier-separation effect and the I - V hysteresis. The ferroelectric and semiconducting synergistic charge-separation effect gives an alternative category of solar cells, ferroelectric semiconductor solar cells. Our findings identify the ferroelectric semiconducting behavior of the perovskite absorber as being significant to the improvement of the ferroelectric PSCs performances in future developments.

  13. Thickness dependence of electrical properties of PZT films deposited on metal substrates by laser-assisted aerosol deposition.

    Science.gov (United States)

    Baba, S; Tsuda, H; Akedo, J

    2008-05-01

    Dependence of electrical properties-dielectric, ferroelectric, and piezoelectric properties-on film thickness was studied for lead-zirconate titanate (PZT) thick films directly deposited onto stainless-steel (SUS) substrates in actuator devices by using a carbon dioxide (CO(2) ), laser assisted aerosol deposition technique. Optical spectroscopic analysis data and laser irradiation experiments revealed that absorption at a given wavelength by the film increased with increasing film thickness. Dielectric constant epsilon, remanent polarization value P(r), and coercive field strength E(c) of PZT films directly deposited onto a SUS-based piezoelectric actuator substrate annealed by CO(2) laser irradiation at 850 degrees C improved with increasing film thickness, and for films thicker than 25 microm, epsilon 800, P(r) 40 microC/cm(2), and E(c) 45 kV/cm. In contrast, the displacement of the SUS-based actuator with the laser-annealed PZT thick film decreased with increasing film thickness.

  14. Impact of nitrogen doping on growth and hydrogen impurity incorporation of thick nanocrystalline diamond films

    Institute of Scientific and Technical Information of China (English)

    Gu Li-Ping; Tang Chun-Jiu; Jiang Xue-Fan; J.L.Pintob

    2011-01-01

    A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond (NCD) films produced by only adding 0.24% N2 into 4% CH4/H2 plasma, as compared to the high quality transparent microcrystalline diamond (MCD) films, grown using the same growth parameters except for nitrogen. These experimental results clearly evidence that defect formation and impurity incorporation (for example, N and H) impeding diamond grain growth is the main formation mechanism of NCD upon nitrogen doping and strongly support the model proposed in the literature that nitrogen competes with CHX (x = 1,2,3) growth species for adsorption sites.

  15. Properties of MgB{sub 2} thick film on silicon carbide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Li Fen; Guo Tao; Zhang Kaicheng; Chen Liping; Chen Chinping; Feng Qingrong [Department of Physics and State Key Laboratory for Artificial Structure and Mesoscopic Physics, Peking University, Beijing 100871(China)

    2006-10-15

    We have successfully synthesized MgB{sub 2} thick films on 4H-SiC substrate by hybrid physical-chemical deposition (HPCVD). The films have transition temperature T{sub c} above 40 K. X-ray diffraction (XRD) shows the c-axis oriented structure of MgB{sub 2}, with Mg and small MgO impurities. The critical current density J{sub c}, estimated using the measured magnetic hysteresis loop and the Bean model, is 6 MA cm{sup -2} in self-field at 10 K.

  16. Negative dependence of surface magnetocrystalline anisotropy energy on film thickness in Co33Fe67 alloy

    Science.gov (United States)

    Wang, De-Lai; Cui, Ming-Qi; Yang, Dong-Liang; Dong, Jun-Cai; Xu, Wei

    2016-10-01

    In this work, the magnetocrystalline anisotropy energy (MAE) on the surface of Fe33Co67 alloy film is extracted from x-ray magnetic linear dichroism (XMLD) experiments. The result indicates that the surface MAE value is negatively correlated with thickness. Through spectrum calculations and analysis, we find that besides the thickness effect, another principal possible cause may be the shape anisotropy resulting from the presence of interface roughness. These two factors lead to different electron structures on the fermi surface with different exchange fields, which produces different spin-orbit interaction anisotropies. Project supported by the National Natural Science Foundation of China (Grant Nos. 11075176 and 11375131).

  17. Thickness dependence of critical current density in MgB{sub 2} films fabricated by ex situ annealing of CVD-grown B films in Mg vapor

    Energy Technology Data Exchange (ETDEWEB)

    Hanna, Mina; Salama, Kamel [Department of Mechanical Engineering and Texas Center for Superconductivity, University of Houston, Houston, TX 77204 (United States); Wang, Shufang; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16801 (United States); Redwing, Joan M [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16801 (United States)], E-mail: ksalama@uh.edu

    2009-01-15

    A study was performed to examine the J{sub c} behavior as a function of thickness in MgB{sub 2} films fabricated by ex situ annealing at 840 deg. C of boron films, grown by chemical vapor deposition, in Mg vapor. The film thicknesses range between 300 nm and 10 {mu}m. The values of J{sub c} range from 1.2 x 10{sup 7} A cm{sup -2} for 300 nm to 1.9 x 10{sup 5} A cm{sup -2} for 10 {mu}m film thicknesses at 20 K and self-field. The study shows that the critical current density (J{sub c}) in MgB{sub 2} films decreases with increasing film thickness, similar to that observed in YBCO-coated conductors. Moreover, our study shows that critical current (I{sub c}) reaches its maximum value of 728 A cm{sup -1} width at {approx}1 {mu}m thick MgB{sub 2} films at 20 K and self-field, which is, interestingly, the same thickness of pulsed-laser-deposited YBCO-coated conductors at which I{sub c} reaches its maximum value. The high J{sub c} values carried by our films show that the ex situ fabrication method can produce high quality MgB{sub 2} films at low processing temperatures, which is promising for RF cavity applications and coated-conductor wires and tapes.

  18. Long thickness-extensional waves in thin film bulk acoustic wave filters affected by interdigital electrodes.

    Science.gov (United States)

    Liu, Jing; Du, Jianke; Wang, Ji; Yang, Jiashi

    2017-03-01

    We studied free vibrations of thin-film bulk acoustic wave filters with interdigital electrodes theoretically using the scalar differential equations by Tiersten and Stevens. The filters are made from AlN or ZnO films on Si substrates with ground and driving electrodes. They operate with thickness-extensional modes. The basic vibration characteristics including resonant frequencies and mode shapes were obtained. Their dependence on various geometric parameters was examined. It was found that for properly design filters there exist trapped modes whose vibrations are strong in regions with a driving electrode and decay away from the electrode edges. These trapped modes are essentially long plate thickness-extensional modes modulated by the electrode fingers. The number of trapped modes is sensitive to the geometric parameters.

  19. Electrical Capacitance Tomography Measurement of Flow Patterns and Film Thickness in a Thermosyphon

    Institute of Scientific and Technical Information of China (English)

    Jingtao LI; Qi CHEN; Xiangyuan DONG; Shi LIU

    2005-01-01

    An experimental study was performed to evaluate the suitability of using an electrical capacitance tomography (ECT) system to visualize the flow patterns, and to measure the film thickness of the annular flow in a two-phase closed thermosyphon (TPCT). The performance of the ECT system was examined over a range of flow conditions.The experimental data were compared with the visual observations and existing correlations. Results indicated that the ECT system, with the linear back projection (LBP) algorithm, could be used to give an on-line qualitative image of the flow patterns. The Landweber iteration algorithm with optimal step length was implemented off-line to reconstruct high-resolution images. Then, the images were analyzed to obtain the film thickness of the annular flow. The experimental data compared well with the Nusselt's equation in low vapor velocity range, but showed an increasing deficiency with the increase of vapor velocity.

  20. Bandgap energy tuning of electrochemically grown ZnO thin films by thickness and electrodeposition potential

    Energy Technology Data Exchange (ETDEWEB)

    Marotti, R.E.; Guerra, D.N.; Machado, G.; Dalchiele, E.A. [Instituto de Fisica, Facultad de Ingenieria, Universidad de la Republica, Julio Herrera y Reissig 565, C.C. 30, Montevideo 11000 (Uruguay); Bello, C. [Unidad Central de Instrumentacion Cientifica UCIC, Facultad de Ciencias, Universidad de la Republica, Igua 4225, C.C. 10773, Montevideo 11400 (Uruguay)

    2004-05-01

    ZnO thin films were electrochemically deposited onto opaque and transparent substrates (copper and ITO). The electrolyte consisted of a 0.1M Zn(NO{sub 3}){sub 2} solution with the initial pH adjusted to 6.0, different electrodeposition potentials from E=-700 to -1200mV (saturated calomel electrode, SCE). The resulting samples have the structural, chemical and morphological properties of hexagonal ZnO, with thickness varying from less than 1{mu}m to almost 30{mu}m. The bandgap energy varies inversely with film thickness, ranging from less than 3.1 to 3.4eV. The bandgap also depends on the electrodeposition potential. This result allows to adjust the desired absorption edge within a 30nm wide region in the UV.

  1. Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films

    Science.gov (United States)

    Reifenberg, John P.; Panzer, Matthew A.; Kim, SangBum; Gibby, Aaron M.; Zhang, Yuan; Wong, Simon; Wong, H.-S. Philip; Pop, Eric; Goodson, Kenneth E.

    2007-09-01

    Thermal conduction in GeSbTe films strongly influences the writing energy and time for phase change memory (PCM) technology. This study measures the thermal conductivity of Ge2Sb2Te5 between 25 and 340°C for layers with thicknesses near 60, 120, and 350nm. A strong thickness dependence of the thermal conductivity is attributed to a combination of thermal boundary resistance (TBR) and microstructural imperfections. Stoichiometric variations significantly alter the phase transition temperatures but do not strongly impact the thermal conductivity at a given temperature. This work makes progress on extracting the TBR for Ge2Sb2Te5 films, which is a critical unknown parameter for PCM simulations.

  2. Evaluation of Cadmium-Free Thick Film Materials on Alumina Substrates

    Energy Technology Data Exchange (ETDEWEB)

    L. H. Perdieu

    2009-09-01

    A new cadmium-free material system was successfully evaluated for the fabrication of thick film hybrid microcircuits at Honeywell Federal Manufacturing & Technologies (FM&T). The characterization involved screen printing, drying and firing two groups of resistor networks which were made using the current material system and the cadmium-free material system. Electrical, environmental and adhesion tests were performed on both groups to determine the more suitable material system. Additionally, untrimmed test coupons were evaluated to further characterize the new materials. The cadmiumfree material system did as well or better than the current material system. Therefore, the new cadmium-free material system was approved for use on production thick film product.

  3. Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

    Science.gov (United States)

    Shao, Guang-hao; Bai, Yu-hang; Cui, Guo-xin; Li, Chen; Qiu, Xiang-biao; Geng, De-qiang; Wu, Di; Lu, Yan-qing

    2016-07-01

    Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (˜28 μm), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is taken to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.

  4. Overview of thick-film technology as applied to solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Firor, K.; Hogan, S.

    1980-01-01

    Thick-film technology was developed by the electronics industry as a means of fabricating components and miniature circuitry. Today, the solar cell industry is looking at screen printing as an alternate to more expensive, high-vacuum techniques in several of the production steps during the manufacture of silicon solar cells. Screen printing is already fairly well established as a means of providing electrical contact to a cell and for the formation of a back surface field. Now under investigation are the possibilities of non-noble metal contacts and protective and antireflective coatings applied to solar cells by the use of screen printing. Most exciting is the work being done in the non-silicon area on the fabrication of the active layers of a solar cell, using thick-film inks made up of II-VI semiconductors.

  5. DESIGN OF FILM THICKNESS INSTRUMENT FOR FIBRE POLYMER COMPOSITES TRIBOLOGICAL EXPERIMENTS

    Directory of Open Access Journals (Sweden)

    B. F. YOUSIF

    2014-04-01

    Full Text Available New technique to measure film thickness in tribological experiments is presented in the current study. The technique is based on strain gauges circuit fixed on a lever of the block on ring (BOR machine. Conversion of strain gauge readings was made to determine the film thickness values. For testing purposes, experiments were conducted using the new machine to investigate the wear performance of glass/polyester composites. The tests were performed against aluminium counterface at different applied loads (0.5 N to 3 N for 10 minutes sliding time under wet contact conditions. From the results, the new technique highly assisted to analysis the tribological results. The SEM showed different damage features.

  6. Antiferroelectric liquid crystals studied by DSC, electro-optic, and dielectric methods

    Science.gov (United States)

    Marzec, M.; Fafara, A.; Wrobel, S.; Godlewska, Malgorzata; Dabrowski, Roman S.; Czuprynski, Krzysztof L.; Haase, Wolfgang

    2000-05-01

    Thermal properties of four liquid crystalline substances exhibiting antiferroelectric SmCA* and ferroelectric SmC* phases were studied using differential scanning calorimetry, texture observation, electrooptic measurements and dielectric spectroscopy. The measurements were performed both on heating and cooling of the samples. All four substances studied in this work are characterized by a complex polymorphism. The temperatures of phase transitions and enthalpy changes associated with them were determined. The transition from the liquid crystalline to the crystalline state showed significant hysteresis for all four substances studied. Textures observations and electrooptic measurements were performed using ITO cells having thickness from 6 to 10 micrometers . The measurements of spontaneous polarization were performed by means of reversal current method. Spontaneous polarization was measured for a few frequencies of the triangular voltage applied. Temperature dependencies of spontaneous polarization have been studied as a function of the side chain structure.

  7. DETERMINATION OF LIQUID FILM THICKNESS FOLLOWING DRAINING OF CONTACTORS, VESSELS, AND PIPES IN THE MCU PROCESS

    Energy Technology Data Exchange (ETDEWEB)

    Poirier, M; Fernando Fondeur, F; Samuel Fink, S

    2006-06-06

    The Department of Energy (DOE) identified the caustic side solvent extraction (CSSX) process as the preferred technology to remove cesium from radioactive waste solutions at the Savannah River Site (SRS). As a result, Washington Savannah River Company (WSRC) began designing and building a Modular CSSX Unit (MCU) in the SRS tank farm to process liquid waste for an interim period until the Salt Waste Processing Facility (SWPF) begins operations. Both the solvent and the strip effluent streams could contain high concentrations of cesium which must be removed from the contactors, process tanks, and piping prior to performing contactor maintenance. When these vessels are drained, thin films or drops will remain on the equipment walls. Following draining, the vessels will be flushed with water and drained to remove the flush water. The draining reduces the cesium concentration in the vessels by reducing the volume of cesium-containing material. The flushing, and subsequent draining, reduces the cesium in the vessels by diluting the cesium that remains in the film or drops on the vessel walls. MCU personnel requested that Savannah River National Laboratory (SRNL) researchers conduct a literature search to identify models to calculate the thickness of the liquid films remaining in the contactors, process tanks, and piping following draining of salt solution, solvent, and strip solution. The conclusions from this work are: (1) The predicted film thickness of the strip effluent is 0.010 mm on vertical walls, 0.57 mm on horizontal walls and 0.081 mm in horizontal pipes. (2) The predicted film thickness of the salt solution is 0.015 mm on vertical walls, 0.74 mm on horizontal walls, and 0.106 mm in horizontal pipes. (3) The predicted film thickness of the solvent is 0.022 mm on vertical walls, 0.91 mm on horizontal walls, and 0.13 mm in horizontal pipes. (4) The calculated film volume following draining is: (a) Salt solution receipt tank--1.6 gallons; (b) Salt solution feed

  8. Thick-Film Carbon Dioxide Sensor via Anodic Adsorbate Stripping Technique and Its Structural Dependence

    OpenAIRE

    Chung-Chiun Liu; Shih-Han Wang; Kanokorn Photinon

    2009-01-01

    A three-electrode based CO2 sensor was fabricated using thick-film technology. The performance of this sensor was further enhanced by incorporating platinum nanoparticles onto the working electrode surface. An eight-fold increase in the signal output was obtained from the electrode with the platinum nanoparticles. The sensing output was linearly related to the CO2 presented. Stability measurements demonstrated that the decline of the active surface area and the sensitivity of the sensor were ...

  9. Electrical properties of thick film capacitors based on barium titanate glass formulations

    Energy Technology Data Exchange (ETDEWEB)

    Leppaevuori, S.; Uusimaeki, A.; Hannula, T.

    1981-12-18

    We carried out an investigation of the effects of the glass content of the dielectric layer of thick film capacitors with a barium titanate glass formulation on the capacitance density, loss factor and breakdown voltage of the capacitors. These effects were studied by varying the firing temperature and glass content of the dielectric paste and by using different types of electrode paste. The characteristics of a test capacitor were also measured.

  10. CO Responses of Sensors Based on Cerium Oxide Thick Films Prepared from Clustered Spherical Nanoparticles

    OpenAIRE

    Woosuck Shin; Takafumi Akamatsu; Toshio Itoh; Ichiro Matsubara; Noriya Izu

    2013-01-01

    Various types of CO sensors based on cerium oxide (ceria) have been reported recently. It has also been reported that the response speed of CO sensors fabricated from porous ceria thick films comprising nanoparticles is extremely high. However, the response value of such sensors is not suitably high. In this study, we investigated methods of improving the response values of CO sensors based on ceria and prepared gas sensors from core-shell ceria polymer hybrid nanoparticles. These hybrid nano...

  11. Investigation of Polymer Thick-film Piezoresistors for Medical Wrist Rehabilitation and Artificial Knee Load Sensors

    OpenAIRE

    2014-01-01

    Readily-available and low-cost commercial polymer-based composite materials, such as standard epoxy-fibreglass printed circuit board (PCB) substrates and resin-carbon thick-film piezoresistors, were evaluated as a solution for medical force sensors, such as a wrist rehabilitation device and an implantable wireless artificial knee force sensor. We show that such materials have high sensitivity, and sufficient short-term stability – provided careful mechanical design and materials selection are...

  12. Characterization of Thick and Thin Film SiCN for Pressure Sensing at High Temperatures

    Directory of Open Access Journals (Sweden)

    Rama B. Bhat

    2010-02-01

    Full Text Available Pressure measurement in high temperature environments is important in many applications to provide valuable information for performance studies. Information on pressure patterns is highly desirable for improving performance, condition monitoring and accurate prediction of the remaining life of systems that operate in extremely high temperature environments, such as gas turbine engines. A number of technologies have been recently investigated, however these technologies target specific applications and they are limited by the maximum operating temperature. Thick and thin films of SiCN can withstand high temperatures. SiCN is a polymer-derived ceramic with liquid phase polymer as its starting material. This provides the advantage that it can be molded to any shape. CERASET™ also yields itself for photolithography, with the addition of photo initiator 2, 2-Dimethoxy-2-phenyl-acetophenone (DMPA, thereby enabling photolithographical patterning of the pre-ceramic polymer using UV lithography. SiCN fabrication includes thermosetting, crosslinking and pyrolysis. The technology is still under investigation for stability and improved performance. This work presents the preparation of SiCN films to be used as the body of a sensor for pressure measurements in high temperature environments. The sensor employs the phenomenon of drag effect. The pressure sensor consists of a slender sensitive element and a thick blocking element. The dimensions and thickness of the films depend on the intended application of the sensors. Fabrication methods of SiCN ceramics both as thin (about 40–60 µm and thick (about 2–3 mm films for high temperature applications are discussed. In addition, the influence of thermosetting and annealing processes on mechanical properties is investigated.

  13. Characterization of Thick and Thin Film SiCN for Pressure Sensing at High Temperatures

    Science.gov (United States)

    Leo, Alfin; Andronenko, Sergey; Stiharu, Ion; Bhat, Rama B.

    2010-01-01

    Pressure measurement in high temperature environments is important in many applications to provide valuable information for performance studies. Information on pressure patterns is highly desirable for improving performance, condition monitoring and accurate prediction of the remaining life of systems that operate in extremely high temperature environments, such as gas turbine engines. A number of technologies have been recently investigated, however these technologies target specific applications and they are limited by the maximum operating temperature. Thick and thin films of SiCN can withstand high temperatures. SiCN is a polymer-derived ceramic with liquid phase polymer as its starting material. This provides the advantage that it can be molded to any shape. CERASET™ also yields itself for photolithography, with the addition of photo initiator 2, 2-Dimethoxy-2-phenyl-acetophenone (DMPA), thereby enabling photolithographical patterning of the pre-ceramic polymer using UV lithography. SiCN fabrication includes thermosetting, crosslinking and pyrolysis. The technology is still under investigation for stability and improved performance. This work presents the preparation of SiCN films to be used as the body of a sensor for pressure measurements in high temperature environments. The sensor employs the phenomenon of drag effect. The pressure sensor consists of a slender sensitive element and a thick blocking element. The dimensions and thickness of the films depend on the intended application of the sensors. Fabrication methods of SiCN ceramics both as thin (about 40–60 μm) and thick (about 2–3 mm) films for high temperature applications are discussed. In addition, the influence of thermosetting and annealing processes on mechanical properties is investigated. PMID:22205871

  14. Thickness dependence of piezoelectric properties of BiFeO3 films fabricated using rf magnetron sputtering system

    Science.gov (United States)

    Aramaki, Masaaki; Kariya, Kento; Yoshimura, Takeshi; Murakami, Shuichi; Fujimura, Norifumi

    2016-10-01

    The piezoelectric property of BiFeO3 films prepared on a (100) LaNiO3/Si(100) substrate using an rf magnetron sputtering system was investigated for their applications in MEMS vibration energy harvesters. The X-ray diffraction profiles indicate that (100)-oriented BiFeO3 films with thicknesses from 450 to 1750 nm were obtained at a deposition temperature of 510 °C. All the films showed well-defined ferroelectric hysteresis loops at room temperature. The thickness dependence of crystallinity and electrical properties indicated that the films have a bottom layer with a high defect density. The e 31,f piezoelectric coefficient and electromechanical coupling factor (k\\text{31,f}2) increase with increasing film thickness and reach -3.2 C/m2 and 3.3%, respectively, at a thickness of 1750 nm, which is considered to be caused by the decrease in defect density.

  15. Study of micron-thick MgB{sub 2} films on niobium substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zhuang Chenggang; Yao Dan; Li Fen; Zhang Kaicheng; Feng Qingrong; Gan Zizhao [School of Physics and State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871 (China)

    2007-03-15

    1 {mu}m thick polycrystalline MgB{sub 2} films have been grown on commercial niobium sheets using the hybrid physical-chemical vapour deposition technique (HPCVD). Their zero-resistance transition temperature T{sub c}{sup 0} ranges from 38 to 39 K and the transition temperature width {delta}T{sub c} is about 0.1-0.2 K. The films are composed of regular plate-shaped MgB{sub 2} crystallites and have lattice constants about the bulk values. Some diffusion regions were observed at the interface between the film and the substrate by a line scanning spectra of energy-dispersive x-ray spectroscopy (EDX) on the cross section, which might enhance the adhesion of the coated layer to the substrate. The critical current densities, J{sub c}, of these films, calculated by the Bean model, are greater than 5 x 10{sup 6} A cm{sup -2} at 10 K in zero field. Although tiny cracks in the film were created by bending the sample on a curved surface with a radius of 1.4 mm, however, T{sub c}{sup 0} of the bent film was not affected and remained about 39 K, which indicates that the sample has a certain ductibility.

  16. Ethanol gas sensing properties of Al2O3-doped ZnO thick film resistors

    Indian Academy of Sciences (India)

    D R Patil; L A Patil; D P Amalnerkar

    2007-12-01

    The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ethanol vapours at 300°C. Aluminium oxide grains dispersed around ZnO grains would result into the barrier height among the grains. Upon exposure of ethanol vapours, the barrier height would decrease greatly leading to drastic increase in conductance. It is reported that the surface misfits, calcination temperature and operating temperature can affect the microstructure and gas sensing performance of the sensor. The efforts are, therefore, made to create surface misfits by doping Al2O3 into zinc oxide and to study the sensing performance. The quick response and fast recovery are the main features of this sensor. The effects of microstructure and additive concentration on the gas response, selectivity, response time and recovery time of the sensor in the presence of ethanol vapours were studied and discussed.

  17. Ultrathin magnesia films as support for molecules and metal clusters: Tuning reactivity by thickness and composition

    Energy Technology Data Exchange (ETDEWEB)

    Vaida, Mihai E.; Bernhardt, Thorsten M. [Institute of Surface Chemistry and Catalysis, University of Ulm (Germany); Barth, Clemens [CINAM-CNRS, Marseille (France); Esch, Friedrich; Heiz, Ueli [Department of Chemistry, Technical University of Munich, Garching (Germany); Landman, Uzi [School of Physics, Georgia Institute of Technology, Atlanta, Georgia (United States)

    2010-05-15

    Ultrathin metal oxide films have attracted considerable interest in recent years as versatile substrate for the design of nanocatalytic model systems. In particular, it has been proposed theoretically and confirmed experimentally that the electronic structure of adsorbates can be influenced by the layer thickness and the stoichiometry, i.e., the type and number of defects, of the oxide film. This has important consequences on the chemical reactivity of the oxide surface itself and of oxide supported metal clusters. It also opens new possibilities to influence and to control chemical reactions occurring at the surface of these systems. The present feature focuses on very recent experiments that illustrate the effects of a proper adjustment of layer thickness and composition of ultrathin MgO(100) films on chemical transformations. On the magnesia surface itself, the photodissociation dynamics of methyl iodide molecules is investigated via femtosecond-laser pump-probe mass spectrometry. Furthermore, the catalytic oxidation of carbon monoxide at mass-selected Au{sub 20} clusters deposited on magnesia is explored through temperature programmed reaction measurements. In the latter case, detailed first principles calculations are able to correlate the experimentally observed reactivity with structural dimensionality changes that are induced by the changing thickness and composition of the magnesia support. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  18. Analysis of flow development in centrifugal atomization: Part I. Film thickness of a fully spreading melt

    Science.gov (United States)

    Zhao, Y. Y.

    2004-09-01

    Centrifugal atomization of metal melts is a cost-effective process for powder production and spray deposition. The properties of the as-produced powder and deposit are determined primarily by the characteristics of the atomized droplets, which in turn are largely dependent on the flow development of the melt on the atomizer. This paper develops a model for analysing the flow development of a fully spreading melt on and off the atomizing cup. The model can be used to calculate the velocity and film thickness of the melt as a function of melt volume flow rate, cup rotation speed, cup radius and cup slope angle, as well as to predict the trajectory of the spray off the cup. The model implies that the disintegration of a fully spreading melt takes place in the region just off the cup edge and the film thickness at the cup edge is a critical factor determining the sizes of the resultant droplets. The film thickness at the cup edge is shown to decrease with decreasing volume flow rate, with increasing cup rotation speed, with increasing cup radius and with decreasing cup slope angle.

  19. Thickness dependence of microstructure in LaCaMnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gross, G.M.; Razavi, F.S.; Praus, R.B.; Habermeier, H.-U. E-mail: huh@servix.mpi-stuttgart.mpg.de

    2000-03-01

    Introducing biaxial strain in doped lanthanum manganite thin films is an excellent tool to modify the electrical and transport properties systematically by controlled changes of the microstructure on an atomic scale. We deposited La{sub 2/3}Ca{sub 1/3}MnO{sub 3} thin films onto SrTiO{sub 3} single-crystal substrates under reproducible conditions in an optimized pulsed laser deposition process. A thickness range of 40 to 500 nm was chosen for the manganite layers to investigate the variation of the average lattice parameters with thickness using X-ray diffraction. We re-investigated the samples after annealing to determine the structural aspects of the relaxation behavior of the layers. A second set of samples was prepared with an analogous in situ annealing process. AFM was applied to examine the morphology and grain size of the layers. Due to a thermally induced strain relaxation process the thicker films show a gradual approach of the out-of-plane lattice constant to the bulk ceramic value. Further relaxation could be achieved with an annealing at 900 deg. C for 1 h. Lattice parameter changes with varying thickness and annealing processes are correlated with transport and magnetic properties.

  20. Response of Ag Thick Film Microstripline due to Superstrate Strontium Substituted Bismuth Manganites

    Directory of Open Access Journals (Sweden)

    S.N. Mathad

    2014-06-01

    Full Text Available The purpose of this paper is to describe the use of strontium-substituted bismuth manganites bulk ceramic superstrate on Ag thick film microstripline, to modify its response and measure complex permittivity as a function of strontium. Bismuth strontium manganites (Bi1 − xSrxMnO3 have been synthesized by solid state sintering technique. The perturbation obtained in the transmittance and reflectance of thick film microstripline due to the Bi1 − xSrxMnO3 (0.20  x  0.50 overlay has been used to obtain the permittivity at microwave frequencies in X and Ku band range. Due to the overlay of Bismuth strontium manganites (BSM pellets a substantial increase in the effective dielectric constant was observed in X band more compared to Ku band. The in-touch overlay method provides ease loading and unloading. The perturbation obtained in the transmittance and reflectance of thick film microstripline due to the bismuth strontium manganites overlay has been used to obtain the permittivity.

  1. Influence of thickness on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2016-02-01

    This paper presents the influence of thickness on physical properties of polycrystalline CdTe thin films. The thin films of thickness 450 nm, 650 nm and 850 nm were deposited employing thermal vacuum evaporation technique on glass and indium tin oxide (ITO) coated glass substrates. The physical properties of these as-grown thin films were investigated employing the X-ray diffraction (XRD), source meter, UV-Vis spectrophotometer, scanning electron microscopy (SEM) coupled with energy dispersive spectroscopy (EDS). The structural analysis reveals that the films have zinc-blende cubic structure and polycrystalline in nature with preferred orientation (111). The structural parameters like lattice constant, interplanar spacing, grain size, strain, dislocation density and number of crystallites per unit area are calculated. The average grain size and optical band gap are found in the range 15.16-21.22 nm and 1.44-1.63 eV respectively and observed to decrease with thickness. The current-voltage characteristics show that the electrical conductivity is observed to decrease with thickness. The surface morphology shows that films are free from crystal defects like pin holes and voids as well as homogeneous and uniform. The EDS patterns show the presence of cadmium and tellurium elements in the as grown films. The experimental results reveal that the film thickness plays significant role on the physical properties of as-grown CdTe thin films and higher thickness may be used as absorber layer to solar cells applications.

  2. Thickness-dependent cooperative aging in polycrystalline films of antiferromagnet CoO

    Science.gov (United States)

    Ma, Tianyu; Cheng, Xiang; Boettcher, Stefan; Urazhdin, Sergei; Novozhilova, Lydia

    2016-07-01

    We demonstrate that thin polycrystalline films of antiferromagnet CoO, in bilayers with ferromagnetic Permalloy, exhibit slow power-law aging of their magnetization state. The aging characteristics are remarkably similar to those previously observed in thin epitaxial Fe50Mn50 films, indicating that these behaviors are likely generic to ferromagnet/antiferromagnet bilayers. In very thin films, aging is observed over a wide temperature range. In thicker CoO, aging effects become reduced at low temperatures. Aging entirely disappears for large CoO thicknesses. We also investigate the dependence of aging characteristics on temperature and magnetic history. Analysis shows that the observed behaviors are inconsistent with the Neel-Arrhenius model of thermal activation, and are instead indicative of cooperative aging of the antiferromagnet. Our results provide new insights into the mechanisms controlling the stationary states and dynamics of ferromagnet/antiferromagnet bilayers, and potentially other frustrated magnetic systems.

  3. Thickness control in electrophoretic deposition of WO{sub 3} nanofiber thin films for solar water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Yuanxing; Lee, Wei Cheat; Canciani, Giacomo E.; Draper, Thomas C.; Al-Bawi, Zainab F. [Department of Chemistry, School of Life Sciences, University of Sussex, Brighton BN1 9QJ (United Kingdom); Bedi, Jasbir S. [School of Public Health & Zoonoses, Guru Angad Dev Veterinary and Animal Sciences University, Ludhiana 141004 Punjab (India); Perry, Christopher C. [Division of Biochemistry, School of Medicine, Loma Linda University, Loma Linda, CA 92350 (United States); Chen, Qiao, E-mail: qiao.chen@sussex.ac.uk [Department of Chemistry, School of Life Sciences, University of Sussex, Brighton BN1 9QJ (United Kingdom)

    2015-12-15

    Graphical abstract: - Highlights: • A novel method combining electrospinning and electrophoretic deposition was established for the creation of nanostructured semiconductor thin films. • The created thin films displayed a high chemical stability with a controllable thickness. • The PEC water splitting performance of the thin films was optimized by fine-tuning the thickness of the films. • A maximum photoconversion efficiency was achieved by 18 μm nanofibrous thin films. - Abstract: Electrophoretic deposition (EPD) of ground electrospun WO{sub 3} nanofibers was applied to create photoanodes with controlled morphology for the application of photoelectrochemical (PEC) water splitting. The correlations between deposition parameters and film thicknesses were investigated with theoretical models to precisely control the morphology of the nanostructured porous thin film. The photoconversion efficiency was further optimized as a function of film thickness. A maximum photoconversion efficiency of 0.924% from electrospun WO{sub 3} nanofibers that EPD deposited on a substrate was achieved at a film thickness of 18 μm.

  4. Space Charge Distribution Measurement in Insulation Film with Thickness of Several Tens μm

    Science.gov (United States)

    Hamano, Akihiro; Tanaka, Yasuhiro; Maeno, Takashi

    Since electronic equipment is required to be smaller and lighter, an insulating material for such equipment is consequently required to be thinner. However, under a certain DC voltage, the electric field in it becomes relatively higher according to the insulating material becomes thinner. Therefore, the insulating performance under high electric field must be important in such thin films. On the other hand, it is said that a space charge accumulation in them under DC high electric field is important because sometimes an electrical breakdown occurs in them due to an enhancement of electric field induced by the accumulated space charge. To investigate the characteristics of the space charge accumulation in them, PEA (Pulsed Electroacoustic) method is usually used. However, a spatial resolution of ordinary PEA system is not enough to observe the space charge distribution in thin films with thickness of several tens μm. Therefore, a new measurement system with high positional resolution is developed by making a thin piezo-electric film that is used as a sensor for PEA system. The obtained resolution of the developed system is 4 μm, and it is used for a typical measurement in LDPE film with thickness of 40 μm.

  5. Thickness dependent electronic structure and morphology of rubrene thin films on metal, semiconductor, and dielectric substrates

    Science.gov (United States)

    Sinha, Sumona; Mukherjee, M.

    2013-08-01

    The evolution of the electronic structure and morphology of rubrene thin films on noble-metal, semiconductor and dielectric substrates have been investigated as a function of thickness of deposited films by using photoelectron spectroscopy and atomic force microscopy. The clean polycrystalline Au and Ag were used as noble-metals, whereas, H passivated and SiO2 coated Si (100) were used as semiconductors and dielectric substrates. Discussion and comparison on interface dipole, energy level alignment, and surface morphology for the four cases are presented. The formation of dipole at metallic interfaces is found to occur due to push back effect. S parameter obtained from the variation of barrier height with the change of work function of the contacting metal indicates moderately weak interaction between rubrene and the metal substrates. The thickness dependent energy level alignment of the physisorbed rubrene films on different substrates is explained by a dielectric model in terms of electrostatic screening of photo-holes or photoemission final state relaxation energy. Films on all the substrates are found to grow following Stranski-Krastnov type growth mode and are more ordered at higher coverage.

  6. Thickness Dependency of Thin Film Samaria Doped Ceria for Oxygen Sensing

    Energy Technology Data Exchange (ETDEWEB)

    Sanghavi, Rahul P.; Nandasiri, Manjula I.; Kuchibhatla, Satyanarayana V N T; Jiang, Weilin; Varga, Tamas; Nachimuthu, Ponnusamy; Engelhard, Mark H.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Kayani, Asghar N.; Prasad, Shalini

    2011-01-01

    High temperature oxygen sensors are widely used for exhaust gas monitoring in automobiles. This particular study explores the use of thin film single crystalline samaria doped ceria as the oxygen sensing material. Desired signal to noise ratio can be achieved in a material system with high conductivity. From previous studies it is established that 6 atomic percent samarium doping is the optimum concentration for thin film samaria doped ceria to achieve high ionic conductivity. In this study, the conductivity of the 6 atomic percent samaria doped ceria thin film is measured as a function of the sensing film thickness. Hysteresis and dynamic response of this sensing platform is tested for a range of oxygen pressures from 0.001 Torr to 100 Torr for temperatures above 673 K. An attempt has been made to understand the physics behind the thickness dependent conductivity behavior of this sensing platform by developing a hypothetical operating model and through COMSOL simulations. This study can be used to identify the parameters required to construct a fast, reliable and compact high temperature oxygen sensor.

  7. Performance Evaluation of an Oxygen Sensor as a Function of the Samaria Doped Ceria Film Thickness

    Energy Technology Data Exchange (ETDEWEB)

    Sanghavi, Rahul P.; Nandasiri, Manjula I.; Kuchibhatla, Satyanarayana V N T; Nachimuthu, Ponnusamy; Engelhard, Mark H.; Shutthanandan, V.; Jiang, Weilin; Thevuthasan, Suntharampillai; Kayani, Asghar N.; Prasad, Shalini

    2010-12-01

    The current demand in the automobile industry is in the control of air-fuel mixture in the combustion engine of automobiles. Oxygen partial pressure can be used as an input parameter for regulating or controlling systems in order to optimize the combustion process. Our goal is to identify and optimize the material system that would potentially function as the active sensing material for such a device that monitors oxygen partial pressure in these systems. We have used thin film samaria doped ceria (SDC) as the sensing material for the sensor operation, exploiting the fact that at high temperatures, oxygen vacancies generated due to samarium doping act as conducting medium for oxygen ions which hop through the vacancies from one side to the other contributing to an electrical signal. We have recently established that 6 atom % Sm doping in ceria films has optimum conductivity. Based on this observation, we have studied the variation in the overall conductivity of 6 atom % samaria doped ceria thin films as a function of thickness in the range of 50 nm to 300 nm at a fixed bias voltage of 2 volts. A direct proportionality in the increase in the overall conductivity is observed with the increase in sensing film thickness. For a range of oxygen pressure values from 1 mTorr to 100 Torr, a tolerable hysteresis error, good dynamic response and a response time of less than 10 seconds was observed

  8. Evaluation of feasibility of measuring EHD film thickness associated with cryogenic fluids. [for space shuttle main engine bearings

    Science.gov (United States)

    Kannel, J. W.; Merriman, T. L.; Stockwell, R. D.; Dufrane, K. F.

    1983-01-01

    The feasibility of measuring elastohydrodynamic (EHD) films as formed with a cryogenic (LN2) fluid is evaluated. Modifications were made to an existing twin disk EHD apparatus to allow for disk lubrication with liquid nitrogen. This disk apparatus is equipped with an X-ray system for measuring the thickness of any lubricant film that is formed between the disks. Several film thickness experiments were conducted with the apparatus which indicate that good lubrication films are filmed with LN2. In addition to the film thickness studies, failure analyses of three bearings were conducted. The HPOTP turbine end bearings had experienced axial loads of 36,000 to 44,000 N (8,000 to 10,000 lb). High continuous radial loads were also experienced, which were most likely caused by thermal growth of the inner race. The resulting high internal loads caused race spalling and ball wear to occur.

  9. New antiferroelectric liquid crystal for use in LCD

    Science.gov (United States)

    Dłubacz, A.; Marzec, M.; Dardas, D.; Żurowska, M.

    2016-04-01

    In this work, the physical properties of newly synthesized liquid crystalline compound exhibiting two liquid crystalline phases (ferroelectric and antiferroelectric) were studied. Based on the results of differential scanning calorimetry, polarizing microscopy, and photoelastic modulator methods, the temperature dependences of spontaneous polarization, tilt angle, switching time, and birefringence in the ferroelectric, as well as antiferroelectric phases were determined. Furthermore, the influence of the external electric field on the liquid crystalline textures was studied and the phase sequences at heating and cooling were revealed. The temperature dependence of spontaneous polarization was analysed by means of Landau mean-field theory, and the critical parameter β obtained for ferroelectric liquid crystalline and isotropic liquid transition was 0.21 which is close to 0.25, the value characteristic for tri-critical point.

  10. Research on film thickness of conductive line formed by laser micro-fine cladding and flexibly direct writing technique

    Institute of Scientific and Technical Information of China (English)

    Huiling Li(李慧玲); Xiaoyan Zeng(曾晓雁); Huifen Li(李惠芬); Xiangyou Li(李祥友); Yiqun Chen(陈佚群)

    2004-01-01

    The conventional technology could not fulfill the rapidly growing need for fine conductive lines for its inherent limits. Therefore, in this study laser micro-fine cladding and flexibly direct writing technique is used to obtain conductive lines with high precision and reliability. In the case of different substrates and parameters, film thickness will be different. Film thickness directly influences the reliability and stability of conductive lines with exception of quality and running speed. Therefore, we focus on developing the optimal parameters for the different substrates to achieve expected film thickness and make conductive lines have good performance and quality.

  11. Thickness-Dependent Properties of YBCO Films Grown on GZO/CLO-Buffered NiW Substrates

    DEFF Research Database (Denmark)

    Malmivirta, M.; Huhtinen, H.; Yue, Zhao;

    2017-01-01

    To study the role of novel Gd2Zr2O7/Ce0.9La0.1O2 buffer layer structure on a biaxially textured NiW substrate, a set of YBa2Cu3O7−δ (YBCO) films with different thicknesses were prepared by pulsed laser deposition (PLD). Interface imperfections as well as thickness-dependent structural properties...... were observed in the YBCO thin films. The structure is also reflected into the improved superconducting properties with the highest critical current densities in films with intermediate thicknesses. Therefore,it can be concluded that the existing buffer layers need more optimization before they can...

  12. Residual stress distribution in thin diamond films and its effects on preparation of thick freestanding diamond films using DC arc plasma jet operated at gas recycling mode

    Institute of Scientific and Technical Information of China (English)

    LI Cheng-ming; LI Hui-qing; CHEN Guan-chao; L(U) Fan-xiu; TONG Yu-mei; TANG Wei-zhong

    2004-01-01

    Diamond films produced by chemical vapor deposition show excellent properties. The residual stress distribution of diamond thin films deposited by DC arc plasma jet at recycling mode was analyzed by line shifts of micro Raman spectroscopy. The results show that the compressive residual stress concentrates at the film's edge. The experimental observations show that cracks initiate at the edge of the diamond thick wafer and then propagate towards the center. The residual stress of diamond films increases with the increase of methane concentration and deposition temperature. The difference of adhesion in close area causes more shear stress and brings about the two sides of crack being not at same level. To suppress crack probability, it is favourable for increasing the film thickness and selecting a substrate with lower coefficient of thermal expansion and lower adhesion. The effects of the residual stress distribution on thick diamond films detachment were discussed.

  13. A novel in-situ technique to fabricate thin films with controlled lateral thickness modulations

    Science.gov (United States)

    Zhang, Chi

    Surfaces having well-defined morphologies like periodic arrays of dots or lines, promise useful applications. Magnetic nanodots of Co and Fe-alloys are useful in patterned magnetic recording media. Well controlled grain size and surface area of nanostructured TiO2 are useful to develop efficient photocatalysts. However, there is a continuing need to develop techniques to make such surfaces in a simple and economical manner. In this thesis, a previously unexplored in-situ approach to assemble lateral patterns in thin films was proposed and investigated. Simple models of film growth on a defect free surface show that under uniform areal deposition rates and surface temperatures, nucleation occurs at random positions on the surface. We proposed that by exposing a growing thin film to a spatially varying surface temperature distribution, nucleation and growth can be confined to specific spatial locations. Consequently, a film with a desired pattern or thickness modulation could be achieved. The experimental approach consists of irradiating the substrate surface with a laser interference pattern simultaneous with physical vapor deposition (PVD). To perform such film growth experiments, a vibration minimized and multifunctional ultra-high vacuum chamber was integrated with a Nd:YAG laser. The laser output is a beam of 266 nm with a coherence length of approximately 2 m and an area of ˜0.8 x 0.8 cm2. The laser has a pulse width of 9 ns, a constant repetition rate of 50 Hz, with a rated peak output of 44 mJ/pulse. The typical laser energy density used in this work was about 10 mJ/cm2. Since sub-micron length scales were of interest, vibration studies were performed by recording the interference patterns on kapton films. Results from the kapton films, measurements using a shear accelerometer and recent growth results showed that peak-to-peak vibration amplitudes on the substrate surface were less than +/-25 nm. Well-established PVD techniques like pulsed laser deposition

  14. Development of Low-cost Chemical and Micromechanical Sensors Based on Thick-film,Thin-film and Electroplated Films

    Institute of Scientific and Technical Information of China (English)

    Wenmin Qu; Kurt Drescher

    2000-01-01

    Various films could be used as sensing materials or as constructional materials for the fabrication of chemical and micromechanical sensors. To illustrate this potential, three sensors fabricated by very different film deposition technologies are given as examples. The sensors are a humidity sensor in thickfilm technology, a multi-functional gas sensor in thin-film technology and a three-dimensional acceleration sensor chip manufactured by electroplating techniques. Design, fabrication and characterisation of these sensors are described in this paper.

  15. Ferrimagnetic Tb-Fe Alloy Thin Films: Composition and Thickness Dependence of Magnetic Properties and All-Optical Switching

    Directory of Open Access Journals (Sweden)

    Birgit eHebler

    2016-02-01

    Full Text Available Ferrimagnetic rare earth - transition metal Tb-Fe alloy thin films exhibit a variety of different magnetic properties, which depends strongly on composition and temperature. In this study, first the influence of the film thickness (5 - 85 nm on the sample magnetic properties was investigated in a wide composition range between 15 at.% and 38 at.% of Tb. From our results, we find that the compensation point, remanent magnetization, and magnetic anisotropy of the Tb-Fe films depend not only on the composition but also on the thickness of the magnetic film up to a critical thickness of about 20-30 nm. Beyond this critical thickness, only slight changes in magnetic properties are observed. This behavior can be attributed to a growth-induced modification of the microstructure of the amorphous films, which affects the short range order. As a result, a more collinear alignment of the distributed magnetic moments of Tb along the out-of-plane direction with film thickness is obtained. This increasing contribution of the Tb sublattice magnetization to the total sample magnetization is equivalent to a sample becoming richer in Tb and can be referred to as an effective composition. Furthermore, the possibility of all-optical switching, where the magnetization orientation of Tb-Fe can be reversed solely by circularly polarized laser pulses, was analyzed for a broad range of compositions and film thicknesses and correlated to the underlying magnetic properties.

  16. Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells.

    Science.gov (United States)

    Yuan, Zhongcheng; Yang, Yingguo; Wu, Zhongwei; Bai, Sai; Xu, Weidong; Song, Tao; Gao, Xingyu; Gao, Feng; Sun, Baoquan

    2016-12-21

    Device performance of organometal halide perovskite solar cells significantly depends on the quality and thickness of perovskite absorber films. However, conventional deposition methods often generate pinholes within ∼300 nm-thick perovskite films, which are detrimental to the large area device manufacture. Here we demonstrated a simple solvent retarding process to deposit uniform pinhole free perovskite films with thicknesses up to ∼800 nm. Solvent evaporation during the retarding process facilitated the components separation in the mixed halide perovskite precursors, and hence the final films exhibited pinhole free morphology and large grain sizes. In addition, the increased precursor concentration after solvent-retarding process led to thick perovskite films. Based on the uniform and thick perovskite films prepared by this convenient process, a champion device efficiency up to 16.8% was achieved. We believe that this simple deposition procedure for high quality perovskite films around micrometer thickness has a great potential in the application of large area perovskite solar cells and other optoelectronic devices.

  17. Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB2 thin films

    Directory of Open Access Journals (Sweden)

    Teng Tan

    2015-04-01

    Full Text Available For potential applications in superconducting RF cavities, we have investigated the properties of polycrystalline MgB2 films, including the thickness dependence of the lower critical field Hc1. MgB2 thin films were fabricated by hybrid physical-chemical vapor deposition on (0001 SiC substrate either directly (for epitaxial films or with a MgO buffer layer (for polycrystalline films. When the film thickness decreased from 300 nm to 100 nm, Hc1 at 5 K increased from around 600 Oe to 1880 Oe in epitaxial films and to 1520 Oe in polycrystalline films. The result is promising for using MgB2/MgO multilayers to enhance the vortex penetration field.

  18. Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Beebe, Melissa R., E-mail: mrbeebe@email.wm.edu; Beringer, Douglas B.; Burton, Matthew C.; Yang, Kaida; Lukaszew, R. Alejandra [Department of Physics, The College of William & Mary, Small Hall, 300 Ukrop Way, Williamsburg, Virginia 23185 (United States)

    2016-03-15

    The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films to exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB{sub 2} thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature T{sub C}, the authors are the first to report on the correlation between stoichiometry and the lower critical field H{sub C1}.

  19. Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm

    Energy Technology Data Exchange (ETDEWEB)

    Wang Haifeng; Huang Zhimeng; Zhang Dayong; Luo Fei; Huang Lixian; Li Yanglong; Luo Yongquan; Wang Weiping; Zhao Xiangjie [Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900 (China)

    2011-12-01

    Laser-induced-damage characteristics of commercial indium-tin oxide (ITO) films deposited by DC magnetron sputtering deposition on K9 glass substrates as a function of the film thickness have been studied at 1064 nm with a 10 ns laser pulse in the 1-on-1 mode, and the various mechanisms for thickness effect on laser-induced-damage threshold (LIDT) of the film have been discussed in detail. It is observed that laser-damage-resistance of ITO film shows dramatic thickness effect with the LIDT of the 50-nm ITO film 7.6 times as large as the value of 300 nm film, and the effect of depressed carrier density by decreasing the film thickness is demonstrated to be the primary reason. Our experiment findings indicate that searching transparent conductive oxide (TCO) film with low carrier density and high carrier mobility is an efficient technique to improve the laser-damage-resistance of TCO films based on maintaining their well electric conductivity.

  20. Dependence of Photovoltaic Property of ZnO/Si Heterojunction Solar Cell on Thickness of ZnO Films

    Institute of Scientific and Technical Information of China (English)

    ZHANG Wei-Ying; ZHONG Sheng; SUN Li-Jie; FU Zhu-Xi

    2008-01-01

    N-ZnO/p-Si heterojunctions are prepared by sputtering deposition of intrinsic ZnO films on p-Si substrates.Thicknesses of ZnO films are altered by varying the deposition time from I h to 3 h.The electrical properties of these structures are analysed from capacitance-voltage ( C- V) and current-voltage (I- V) characteristics performed in a dark room.The results demonstrated that all the samples show strong rectifying behaviour.Photovoltalc property for the samples with different thicknesses of ZnO films are investigated by measuring open circuit voltage and short circuit current.It is found that photovoltages are kept to be almost constant of 32OmV along with the thickness while photocurrents changing a lot.The variation mechanism of the photovoltalc effect as a function of thickness of ZnO films is investigated.

  1. Facile production of thermoelectric bismuth telluride thick films in the presence of polyvinyl alcohol.

    Science.gov (United States)

    Lei, C; Burton, M R; Nandhakumar, I S

    2016-06-01

    Bismuth telluride is currently the best performing thermoelectric material for room temperature operations in commercial thermoelectric devices. We report the reproducible and facile production of 600 micron thick bismuth telluride (Bi2Te3) layers by low cost and room temperature pulsed and potentiostatic electrodeposition from a solution containing bismuth and tellurium dioxide in 2 M nitric acid onto nickel in the presence of polyvinyl alcohol (PVA). This was added to the electrolyte to promote thick layer formation and its effect on the structure, morphology and composition of the electrodeposits was investigated by SEM and EDX. Well adherent, uniform, compact and stoichiometric n-type Bi2Te3 films with a high Seebeck coefficient of up to -200 μV K(-1) and a high electrical conductivity of up to 400 S cm(-1) resulting in a power factor of 1.6 × 10(-3) W m(-1) K(-2) at film growth rates of 100 μm h(-1) for potentiostatic electrodeposition were obtained. The films also exhibited a well defined hexagonal structure as determined by XRD.

  2. Thickness-dependent structural arrangement in nano-confined imidazolium-based ionic liquid films.

    Science.gov (United States)

    Rouha, Michael; Cummings, Peter T

    2015-02-14

    A fundamental understanding of interfacial processes in nano-confined ionic liquids is crucial to increase the performance of modern energy storage devices. It is well-known that interfaces between electrodes and ionic liquids exhibit structures distinct from that of the bulk liquid. Following the recent interest in these systems, we studied the structure of thin ionic liquid films confined in flexible uncharged carbon nano-pores by using fully-atomistic molecular dynamics simulations. We show that the interfacial ions self-assemble into a closely-packed chequerboard-like pattern, formed by both cations and anions in direct contact with the pore wall, and that within this structure we find changes dependent on the thickness of the confined films. At low coverages a dense layer is formed in which both the imidazolium-ring and its alkyl-tail lie parallel to the pore wall. With increasing coverage the alkyl-chains reorient perpendicular to the surface, making space for additional ions until a densified highly ordered layer is formed. This wall-induced self-patterning into interfacial layers with significantly higher than bulk density is consistent with recent experimental and theoretical studies of similar systems. This work reveals additional molecular-level details on the effect of the film-thickness on the structure and density of the ionic liquid.

  3. Effect of finite magnetic film thickness on Néel coupling in spin valves

    Science.gov (United States)

    Kools, J. C. S.; Kula, W.; Mauri, Daniele; Lin, Tsann

    1999-04-01

    Spin valves are widely studied due to their application as magnetoresistive material in magnetic recording heads and other magnetic field sensors. An important film property is the interlayer coupling field (called offset field Ho or ferromagnetic coupling field Hf). It has been shown that the Néel model for orange-peel coupling can be applied successfully to describe this interlayer coupling. The waviness associated with the developing granular structure is thereby taken as the relevant waviness. The original Néel model describes the ferromagnetic magnetostatic interaction between two ferromagnetic layers, of infinite thickness, separated by a nonmagnetic spacer with a correlated interface waviness. In this article, this physical picture is refined to account for the effect of the finite thickness of the magnetic films in a spin valve. Magnetic poles created at the outer surfaces of the magnetic layers result in an antiferromagnetic interaction with the poles at the inner surface of the opposite layer. A simple model is presented for the different interactions in a top spin valve (columnar structure with cumulative waviness on a flat substrate) and for a bottom spin valve (columnar structure with conformal waviness on a way substrate). Comparison to experimental data, shows that the free and pinned layer thickness dependence can be understood from this refined picture.

  4. Growth of thick MgB{sub 2} films by impinging-jet hybrid physical-chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lamborn, D.R. [Department of Chemical Engineering, The Pennsylvania State University, University Park, PA 16802 (United States); Wilke, R.H.T.; Li, Q. [Department of Physics, The Pennsylvania State University, University Park, PA 16802 (United States); Xi, X. [Department of Physics, Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, PA 16801 (United States); Snyder, D.W. [Applied Research Laboratory, The Pennsylvania State University, University Park, PA 16802 (United States); Redwing, J.M. [Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, PA 16801 (United States)

    2008-01-18

    Thick MgB{sub 2} films are grown using a novel impinging-jet hybrid physical-chemical vapor deposition process. An increased amount of the boron source gas generates high growth rates. Superconducting properties of the thick films are comparable to previous results from other processes, which indicate that this is a promising new process for MgB{sub 2} deposition for coated conductor applications, such as wires and tapes for MRI magnets. (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  5. Investigation of thickness uniformity of thin metal films by using α-particle energy loss method and successive scanning measurements

    Science.gov (United States)

    Li, Gang; Xu, Jiayun; Bai, Lixin

    2017-03-01

    The metal films are widely used in the Inertial Confinement Fusion (ICF) experiments to obtain the radiation opacity, and the accuracy of the measuring results mainly depends on the accuracy of the film thickness and thickness uniformity. The traditional used measuring methods all have various disadvantages, the optical method and stylus method cannot provide mass thickness which reflects the internal density distribution of the films, and the weighing method cannot provide the uniformity of the thickness distribution. This paper describes a new method which combines the α-particle energy loss (AEL) method and the successive scanning measurements to obtain the film thickness and thickness uniformity. The measuring system was partly installed in the vacuum chamber, and the relationship of chamber pressure and energy loss caused by the residual air in the vacuum chamber was studied for the source-to-detector distance ranging from 1 to 5 cm. The results show that the chamber pressure should be less than 10 Pa for the present measuring system. In the process of measurement, the energy spectrum of α-particles transmitted through each different measuring point were obtained, and then recorded automatically by a self-developed multi-channel analysis software. At the same time, the central channel numbers of the spectrum (CH) were also saved in a text form document. In order to realize the automation of data processing and represent the thickness uniformity visually in a graphic 3D plot, a software package was developed to convert the CH values into film thickness and thickness uniformity. The results obtained in this paper make the film thickness uniformity measurements more accurate and efficient in the ICF experiments.

  6. Influence of La-Mn-Al Co-Doping on Dielectric Properties and Structure of BST Thick Film

    Institute of Scientific and Technical Information of China (English)

    Mao-Yan Fan; Sheng-Lin Jiang

    2009-01-01

    A new sol-gel process is applied to fabricate the BST (BaxSr1(xTiO3) sol and nano-powder of La-Mn-Al co-doping with Ba/Sr ratio 65/35, and the BST thick film is prepared in the Pt/Ti/SiO2/Si substrate. The powder and thick film are characterized by X-ray diffraction and transmission electron microscope. The influence of La-Mn-Al co-doping on the dielectric properties and micro-structure of BST thick film is analyzed. The results show that the La, Mn, and Al ions can take an obvious restraint on the growth of BaSrTiO3 grains. The polycrystalline particles come into being during the crystallization of thick film, which may improve the uniformity and compactness of thick film. The influence of unequal-valence and doping amount on the leakage current, dielectric loss, and dielectric property are mainly discussed. The dielectric constant and dielectric loss of thick film are 1200 and 0.03, respectively, in the case of 1mol% La doping, 2mol% Mn doping, and 1mol% Al doping.

  7. Impedance of nanometer thickness ferromagnetic Co40Fe40B20 films

    Directory of Open Access Journals (Sweden)

    Lo Chi

    2011-01-01

    Full Text Available Abstract Nanocrystalline Co40Fe40B20 films, with film thickness t f = 100 nm, were deposited on glass substrates by the magnetron sputtering method at room temperature. During the film deposition period, a dc magnetic field, h = 40 Oe, was applied to introduce an easy axis for each film sample: one with h||L and the other with h||w, where L and w are the length and width of the film. Ferromagnetic resonance (FMR, ultrahigh frequency impedance (IM, dc electrical resistivity (ρ, and magnetic hysteresis loops (MHL of these films were studied. From the MHL and r measurements, we obtain saturation magnetization 4πMs = 15.5 kG, anisotropy field H k = 0.031 kG, and r = 168 mW.cm. From FMR, we can determine the Kittel mode ferromagnetic resonance (FMR-K frequency f FMRK = 1,963 MHz. In the h||L case, IM spectra show the quasi-Kittel-mode ferromagnetic resonance (QFMR-K at f 0 and the Walker-mode ferromagnetic resonance (FMR-W at fn , where n = 1, 2, 3, and 4. In the h||w case, IM spectra show QFMR-K at F 0 and FMR-W at Fn . We find that f 0 and F 0 are shifted from f FMRK, respectively, and fn = Fn . The in-plane spin-wave resonances are responsible for those relative shifts. PACS No. 76.50.+q; 84.37.+q; 75.70.-i

  8. Wet Chemical Synthesis and Screening of Thick Porous Oxide Films for Resistive Gas Sensing Applications

    Directory of Open Access Journals (Sweden)

    Wilhelm F. Maier

    2006-11-01

    Full Text Available A method of wet chemical synthesis suitable for high throughput and combinatorial applications has been developed for the synthesis of porous resistive thick-film gas sensors. This method is based on the robot-controlled application of unstable metal oxide suspensions on an array of 64 inter-digital electrodes positioned on an Al2O3 substrate. SnO2, WO3, ZrO2, TiO2, CeO2, In2O3 and Bi2O3 were chosen as base oxides, and were optimised by doping or mixed oxide formation. The parallel synthesis of mixed oxide sensors is illustrated by representative examples. The electrical characteristics and the sensor performance of the films were measured by high-throughput impedance spectroscopy while supplying various test gases (H2, CO, NO, NO2, propene. Data collection, data mining techniques applied and the best potential sensor materials discovered are presented.

  9. 100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

    KAUST Repository

    Li, Xiaohang

    2017-01-11

    Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.

  10. Residual Strains in a Nanometer Thick Cr Film Measured on Micromachined Beams

    Institute of Scientific and Technical Information of China (English)

    Z.M. Zhou; Yong Zhou; Ying Cao; Haiping Mao

    2009-01-01

    A Cr film with a 75 nm thickness sputtered on a Si substrate was used to fabricate microbridge and microcan-tilever samples with the MEMS (microelectromechanical system) technique. The profile of the buckled beams was measured by using the interference technique with white light and fitted with a theoretical result. The uniform residual strain in the bridge samples was deduced from the variation of buckling amplitude with the beam length. On the other hand, the gradient residual strain was determined from the deflection profile of the cantilever. The residual uniform and gradient strain in the Cr film are about 4.96×10-3 and 4.2967×10-5, respectively.

  11. Coupling effects in bilayer thick metal films perforated with rectangular nanohole arrays

    Directory of Open Access Journals (Sweden)

    Li Yuan

    2013-09-01

    Full Text Available The coupling effects in bilayer thick metal (silver films perforated with rectangular nanohole arrays are investigated using the finite-difference time-domain technique. Many interesting light phenomena are observed as the distance between the metal rectangular nanohole arrays varies. Coupling effects are found to play very important roles on the optical and electronic properties of bilayer metal rectangular nanohole arrays: antisymmetric coupling between surface plasmon polaritons near the top and bottom film plane, and antisymmetric coupling between localized surface plasmon resonances near the two long sides of the rectangular hole, are probably excited in each layer of bilayer metal rectangular nanohole arrays; antisymmetric and symmetric magnetic coupling probably occur between the metal rectangular nanohole arrays.

  12. Quasiparticle Transport in Thick Aluminum Films Coupled to Tungsten Transition Edge Sensors

    Science.gov (United States)

    Yen, J. J.; Kreikebaum, J. M.; Young, B. A.; Cabrera, B.; Moffatt, R.; Redl, P.; Shank, B.; Brink, P. L.; Cherry, M.; Tomada, A.

    2016-07-01

    We have fabricated and characterized test devices of a new geometry for cryogenic dark matter search superconducting sensors. The modified design uses the same photolithography masks used to fabricate earlier-generation devices, but with the Al and W films deposited in reverse order. This inverted film geometry (Al over W instead of our conventional W over Al) offers a simplified and robust way to dramatically increase the thickness of Al energy-collecting fins coupled to thin W-TESs—tungsten-transition edge sensors. Data are presented from experiments with inverted geometry test devices exposed to X-rays from a NaCl fluorescence source. The results are compared to data obtained with similar devices fabricated in the standard, non-inverted geometry.

  13. Variation of structure and magnetic properties with thickness of thin Co59Fe26Ni15 films

    NARCIS (Netherlands)

    Chechenin, NG; van Voorthuysen, EHD; De Hosson, JTM; Boerma, DO

    2005-01-01

    Variations of phase composition and magnetic properties of electrodeposited nanocrystalline Co-Fe-Ni films with film thickness in the range of 50-500 nm were analyzed. The samples were magnetically soft with coercivity in the range H-c = 2-20 Oe and uni axial magnetic anisotropy up to H-k = 20 Oe. I

  14. Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition

    Science.gov (United States)

    Seo, Wondeok; Shin, Seokyoon; Ham, Giyul; Lee, Juhyun; Lee, Seungjin; Choi, Hyeongsu; Jeon, Hyeongtag

    2017-03-01

    Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9° in the X-ray diffraction (XRD) results and an A1g peak at 311 cm‑1 in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 °C showed a crystalline phase at film thicknesses above 11.2 nm. The crystallinity of the SnS2 thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS2 consisted of Sn4+ and S2‑ valence states. Both the optical band gap and the transmittance of SnS2 decreased as the film thickness increased. The band gap of SnS2 decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32% at a wavelength of 400 nm. In addition, the resistivity of the thin film SnS2 decreased from 1011 to 106 Ω·cm as the film thickness increased.

  15. Microstructure and thermoelectric properties of screen-printed thick-films of misfit-layered cobalt oxides with Ag addition

    DEFF Research Database (Denmark)

    Van Nong, Ngo; Samson, Alfred Junio; Pryds, Nini

    2012-01-01

    Thermoelectric properties of thick (~60 μm) films prepared by a screen-printing technique using p-type misfit-layered cobalt oxide Ca3Co4O9+δ with Ag addition have been studied. The screen-printed films were sintered in air at various temperatures ranging from 973 K to 1223 K. After each sintering...

  16. Effect of layer thickness on the superconducting properties in ultrathin Pb films

    Science.gov (United States)

    Durajski, A. P.

    2015-09-01

    Recently, superconductivity was found in one atomic layer of Pb film, promising a new field of research where superconductors can be studied on the atomic level. In the presented paper, we report a theoretical study of the superconductivity in ultrathin Pb films consisting of five to ten monolayers. Using the strong coupling Eliashberg formalism we reproduced the experimental values of critical temperature (TC) and we estimated the superconducting energy gap (Δ (0)), thermodynamic critical field (HC) and the specific heat jump at critical temperature (Δ C≤ft({T}{{C}}\\right)\\equiv {C}{{S}}≤ft({T}{{C}}\\right)-{C}{{N}}≤ft({T}{{C}}\\right)) for a wide range of film thicknesses. In these systems, we found an oscillatory behaviour of the above thermodynamic properties modulated by quantum size effects. Moreover, the large values of 2Δ (0){/k}{{B}}{T}{{C}} and Δ C≤ft({T}{{C}}\\right)/{C}{{N}}≤ft({T}{{C}}\\right), and the small values of {T}{{C}}{C}{{N}}≤ft({T}{{C}}\\right)/{H}{{C}}2(0) prove that the thermodynamic properties of Pb films cannot be correctly described using the Bardeen-Cooper-Schrieffer (BCS) theory of superconductivity due to the strong coupling and retardation effects.

  17. Degradation of PVC/rPLA Thick Films in Soil Burial Experiment

    Science.gov (United States)

    Nowak, Bożena; Rusinowski, Szymon; Chmielnicki, Blazej; Kamińska-Bach, Grażyna; Bortel, Krzysztof

    2016-10-01

    Some of the biodegradable polymers can be blended with a synthetic polymer to facilitate their biodegradation in the environment. The objective of the study was to investigate the biodegradation of thick films of poly(vinyl chloride)/recycled polylactide (PVC/rPLA). The experiments were carried out in the garden soil or in the mixture of garden soil and hydrocarbon-contaminated soil under laboratory conditions. Since it is widely accepted that the biosurfactants secreted by microorganisms enable biotransformation of various hydrophobic substances in the environment, it was assumed that the use of contaminated soil, rich in biosurfactant producing bacteria, may accelerate biodegradation of plastics. After the experimental period, the more noticeable weight loss of polymer films was observed after incubation in the garden soil. However, more pronounced changes in the film surface morphology and chemical structure as well as decrease of tensile strength were observed after incubation of films in the mixture of garden and contaminated soil. It turned out that as a result of competition between two distinct groups of microorganisms present in the mixture of garden and hydrocarbon-contaminated soils the number of microorganisms and their activity were lower than the activity of indigenous microflora of garden soil as well as the amount of secreted biosurfactants towards plastics.

  18. Effect of Ti layer thickness on microstructure and magnetic properties of Ti/Co/Ti films

    Institute of Scientific and Technical Information of China (English)

    ZHANG Yujie; ZHANG Hanwei; FENG Shunzhen; SUN Huiyuan; HU Yanying; PENG Yan

    2006-01-01

    TiCoTi granular films were prepared by DC facing-target magnetron sputtering system onto glass substrates and subsequently in situ annealing in vacuum. Structural of Ti ( t nm)/Co (40 nm)/Ti ( t nm) films were investigated in detail, which shows that the majority Co nanograins are formed as the hexagonal-close-packed (HCP) structure. Vibrating sample magnetometer (VSM) and scanning probe microscope (SPM) were applied to study the magnetic properties, morphologies and domain structures of these samples. It has been found that the structure and magnetic properties of the Ti/Co/Ti films depend strongly on the Ti layer thickness. The out-of-plane coercivities ( Hc) of the film is maximum about 78.8 kA·m-1 when t =5 nm with annealing at 300 ℃; the distributing of grains of the sample is uniformity; and the average size of particles is about 13 nm. The obtained results suggest that this system is perpendicular anisotropy and might be applicable to perpendicular magnetic recording media.

  19. CdS nanofilms: Effect of film thickness on morphology and optical band gap

    Science.gov (United States)

    Kumar, Suresh; Kumar, Santosh; Sharma, Pankaj; Sharma, Vineet; Katyal, S. C.

    2012-12-01

    CdS nanofilms of varying thickness (t) deposited by chemical bath deposition technique have been studied for structural changes using x-ray diffractometer (XRD) and transmission electron microscope (TEM). XRD analysis shows polycrystalline nature in deposited films with preferred orientation along (002) reflection plane also confirmed by selected area diffraction pattern of TEM. Uniform and smooth surface morphology observed using field emission scanning electron microscope. The surface topography has been studied using atomic force microscope. The optical constants have been calculated from the analysis of %T and %R spectra in the wavelength range 300 nm-900 nm. CdS nanofilms show a direct transition with red shift. The optical band gap decreases while the refractive index increases with increase in thickness of nanofilms.

  20. Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium-Indium-Zinc Oxide Thin Film Transistors

    Science.gov (United States)

    Kim, Sun-Jae; Lee, Soo-Yeon; Lee, Young-Wook; Lee, Woo-Geun; Yoon, Kap-Soo; Kwon, Jang-Yeon; Han, Min-Koo

    2011-02-01

    We investigated the channel layer thickness dependence of the characteristics and stability in amorphous hafnium indium zinc-oxide (HIZO) thin film transistors (TFTs). HIZO TFTs were prepared with various channel thicknesses from 400 to 700 Å. In HIZO TFTs, carrier concentration is considerably high, which leads to channel layer thickness dependence. The threshold voltages of TFTs negatively shifted as the channel thickness increased. The threshold voltage shift at a high temperature is more severe in TFTs with thicker channel layers. The channel thickness dependence of the bias stability of HIZO TFTs is closely related to the back interface, rather than the bulk state.

  1. Deep Impact Delta II Launch Vehicle Cracked Thick Film Coating on Electronic Packages Technical Consultation Report

    Science.gov (United States)

    Cameron, Kenneth D.; Kichak, Robert A.; Piascik, Robert S.; Leidecker, Henning W.; Wilson, Timmy R.

    2009-01-01

    The Deep Impact spacecraft was launched on a Boeing Delta II rocket from Cape Canaveral Air Force Station (CCAFS) on January 12, 2005. Prior to the launch, the Director of the Office of Safety and Mission Assurance (OS&MA) requested the NASA Engineering and Safety Center (NESC) lead a team to render an independent opinion on the rationale for flight and the risk code assignments for the hazard of cracked Thick Film Assemblies (TFAs) in the E-packages of the Delta II launch vehicle for the Deep Impact Mission. The results of the evaluation are contained in this report.

  2. Thick-Film Carbon Dioxide Sensor via Anodic Adsorbate Stripping Technique and Its Structural Dependence.

    Science.gov (United States)

    Photinon, Kanokorn; Wang, Shih-Han; Liu, Chung-Chiun

    2009-01-01

    A three-electrode based CO(2) sensor was fabricated using thick-film technology. The performance of this sensor was further enhanced by incorporating platinum nanoparticles onto the working electrode surface. An eight-fold increase in the signal output was obtained from the electrode with the platinum nanoparticles. The sensing output was linearly related to the CO(2) presented. Stability measurements demonstrated that the decline of the active surface area and the sensitivity of the sensor were 8% and 13%, respectively, over a two week period of time. The sensor response appeared to be a structural dependence of the crystallographic orientation of platinum electrode.

  3. Thick-Film Carbon Dioxide Sensor via Anodic Adsorbate Stripping Technique and Its Structural Dependence

    Directory of Open Access Journals (Sweden)

    Chung-Chiun Liu

    2009-09-01

    Full Text Available A three-electrode based CO2 sensor was fabricated using thick-film technology. The performance of this sensor was further enhanced by incorporating platinum nanoparticles onto the working electrode surface. An eight-fold increase in the signal output was obtained from the electrode with the platinum nanoparticles. The sensing output was linearly related to the CO2 presented. Stability measurements demonstrated that the decline of the active surface area and the sensitivity of the sensor were 8% and 13%, respectively, over a two week period of time. The sensor response appeared to be a structural dependence of the crystallographic orientation of platinum electrode.

  4. Screen printed PZT/PZT thick film bimorph MEMS cantilever device for vibration energy harvesting

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Christiansen, T.L.

    2011-01-01

    We present a MEMS-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. The most common piezoelectric energy harvesting devices utilize a cantilever beam of a non piezoelectric material as support beneath or in-between the piezoelectric material....... It provides mechanical support but it also reduces the power output. Our device replaces the support with another layer of the piezoelectric material, and with the absence of an inactive mechanical support all of the stresses induced by the vibrations will be harvested by the active piezoelectric elements....

  5. Nonlinear thickness-stretch vibration of thin-film acoustic wave resonators

    Science.gov (United States)

    Ji, Xiaojun; Fan, Yanping; Han, Tao; Cai, Ping

    2016-03-01

    We perform a theoretical analysis on nonlinear thickness-stretch free vibration of thin-film acoustic wave resonators made from AlN and ZnO. The third-order or cubic nonlinear theory by Tiersten is employed. Using Green's identify, under the usual approximation of neglecting higher time harmonics, a perturbation analysis is performed from which the resonator frequency-amplitude relation is obtained. Numerical calculations are made. The relation can be used to determine the linear operating range of these resonators. It can also be used to compare with future experimental results to determine the relevant thirdand/or fourth-order nonlinear elastic constants.

  6. A low-cost photovoltaic cell process based on thick film techniques

    Science.gov (United States)

    Mardesich, N.; Pepe, A.; Bunyan, S.; Edwards, B.; Olson, C.

    1980-01-01

    The low-cost, easily automated processing for solar cell fabrication being developed at Spectrolab for the DOE LSA program is described. These processes include plasma-etching, spray-on diffusion sources and antireflective coating, thick film metallization, aluminum back contacts, laser scribing and ultrasonic soldering. The process sequence has been shown to produce solar cells having 15% conversion efficiency at AM1 which meet the cell fabrication budget required for the DOE 1986 cost goal of $0.70 per peak watt in 1980.

  7. Critical thickness and orbital ordering in ultrathin La0.7Sr0.3MnO3 films

    NARCIS (Netherlands)

    Huijben, M.; Martin, L.W.; Chu, Y.-H.; Holcomb, M.B.; Yu, P.; Rijnders, G.; Blank, D.H.A.; Ramesh, R.

    2008-01-01

    Detailed analysis of transport, magnetism, and x-ray absorption spectroscopy measurements on ultrathin La0.7Sr0.3MnO3 films with thicknesses from 3 to 70 unit cells resulted in the identification of a lower critical thickness for a nonmetallic nonferromagnetic layer at the interface with the SrTiO3

  8. ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

    Directory of Open Access Journals (Sweden)

    Javed Iqbal

    2016-10-01

    Full Text Available Nanostructured ZnO thin films with high transparency have been grown on glass substrate by atomic layer deposition at various temperatures ranging from 100 °C to 300 °C. Efforts have been made to observe the effect of substrate temperature on the thickness of the deposited thin films and its consequences on the energy band gap. A remarkably high growth rate of 0.56 nm per cycle at a substrate temperature of 200 °C for ZnO thin films have been achieved. This is the maximum growth rate for ALD deposited ZnO thin films ever reported so far to the best of our knowledge. The studies of field emission scanning electron microscopy and X-ray diffractometry patterns confirm the deposition of uniform and high quality nanosturtured ZnO thin films which have a polycrystalline nature with preferential orientation along (100 plane. The thickness of the films deposited at different substrate temperatures was measured by ellipsometry and surface profiling system while the UV–visible and photoluminescence spectroscopy studies have been used to evaluate the optical properties of the respective thin films. It has been observed that the thickness of the thin film depends on the substrate temperatures which ultimately affect the optical and structural parameters of the thin films.

  9. Determination of layer thickness and optical constants of thin films by using a modified pattern search method.

    Science.gov (United States)

    Miloua, R; Kebbab, Z; Chiker, F; Sahraoui, K; Khadraoui, M; Benramdane, N

    2012-02-15

    We propose the use of a pattern search optimization technique in combination with a seed preprocessing procedure to determine the optical constants and thickness of thin films using only the transmittance spectra. The approach is quite flexible, straightforward to implement, and efficient in reaching the best fitting. We demonstrate the effectiveness of the method in extracting optical constants, even when the films are not displaying interference fringes. Comparison to a real-coded genetic algorithm shows that the modified pattern search is fast, almost accurate, and does not need any parameter adjustments. The approach is successfully applied to extract the thickness and optical constants of spray pyrolyzed nanocrystalline CdO thin films.

  10. Effect of Catalyst Film Thickness on Growth Morphology, Surface Wettability and Drag Reduction Property of Carbon Nanotubes

    Science.gov (United States)

    Ma, Weiwei; Zhou, Zhiping; Li, Gang; Li, Ping

    2016-10-01

    Nickel films were deposited on silicon substrates using magnetron sputtering method. The pretreatment process of nickel films under high temperature and ammonia atmosphere was investigated. The thickness of nickel film has a great influence on growth morphology of carbon nanotubes (CNTs). Too large or too small thickness would do harm to the orientated growth of CNTs. The inner structure, elements composition and growth mechanism have been confirmed by TEM and EDX characterization. The surface wettability and drag reduction property of CNTs were investigated. This paper can provide a new, effective method to further develop the practical application in micro/nano devices field.

  11. Thermal Conductivity Measurement of Submicron-Thick Aluminium Oxide Thin Films by a Transient Thermo-Reflectance Technique

    Institute of Scientific and Technical Information of China (English)

    BAI Su-Yuan; TANG Zhen-An; HUANG Zheng-Xing; YU Jun; WANG Jia-Qi

    2008-01-01

    Thermal conductivity of submicron-thick aluminium oxide thin films prepared by middle frequency magnetron sputtering is measured using a transient thermo-reflectance technique.A three-layer model based on transmission line theory and the gentic algorithm optimization method are employed to obtain the thermal conductivity of thin films and the interfacial thermal resistance.The results show that the average thermal conductivity of 3301000nm aluminium oxide thin films is 3.3Wm-1 K-1 at room temperature.No significant thickness dependence is found.The uncertainty of the measurement is less than 10%.

  12. Anomalous thickness-dependent optical energy gap of ALD-grown ultra-thin CuO films

    Science.gov (United States)

    Tripathi, T. S.; Terasaki, I.; Karppinen, M.

    2016-11-01

    Usually an inverse square relation between the optical energy gap and the size of crystallites is observed for semiconducting materials due to the strong quantum localization effect. Coulomb attraction that may lead to a proportional dependence is often ignored or considered less important to the optical energy gap when the crystallite size or the thickness of a thin film changes. Here we report a proportional dependence between the optical energy gap and the thickness of ALD-grown CuO thin films due to a strong Coulomb attraction. The ultrathin films deposited in the thickness range of 9-81 nm show a p-type semiconducting behavior when analyzed by Seebeck coefficient and electrical resistivity measurements. The indirect optical energy gap nature of the films is verified from UV-vis spectrophotometric measurements. A progressive increase in the indirect optical energy gap from 1.06 to 1.24 eV is observed with the increase in the thickness of the films. The data are analyzed in the presence of Coulomb attractions using the Brus model. The optical energy gap when plotted against the cubic root of the thickness of the films shows a linear dependence.

  13. Structural and Optical Properties of ZnO Films with Different Thicknesses Grown on Sapphire by MOCVD

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    ZnO(002) films with different thicknesses, grown on Al2O3 (006) substrates by metal-organic chemical vapor deposition( MOCVD), were etched by Ar ion beams. The samples were examined by D8 X-ray diffraction, scanning electron microscopy(SEM), and photoluminescence (PL) spectrometry. The structural properties vary with the increasing thickness of the films. When the film thickness is thin, the phi(Φ) scanning curves for ZnO(103) and sapphire(116) substrate show the existence of two kinds of orientation relationships between ZnO films and sapphire,which are ZnO(002)//Al2O3 (006), ZnO(100)//Al2O3 (110) and ZnO(002)//Al2O3 (006), ZnO(110)//Al2O3(110). When the thickness increases to 500 nm there is only one orientation relationship, which is ZnO(002)//Al2O3 (006), ZnO [ 100 ]//Al2O3[ 110 ]. Their photoluminescence (PL) spectra at room temperature show that the optical properties of ZnO films have been greatly improved when increasing the thickness of films is increased.

  14. ZnO sensing film thickness effects on the sensitivity of surface plasmon resonance sensors with angular interrogation

    Energy Technology Data Exchange (ETDEWEB)

    Bao Ming; Li Ge; Jiang Dongmei; Cheng Wenjuan [State Key Laboratory of Precision Spectroscopy, and Department of Physics, East China Normal University, Shanghai 200062 (China); Ma Xueming, E-mail: xmma@phy.ecnu.edu.cn [State Key Laboratory of Precision Spectroscopy, and Department of Physics, East China Normal University, Shanghai 200062 (China)

    2010-07-25

    The effects of ZnO sensing film thickness on the surface plasmon resonance (SPR) curve have been investigated. ZnO sensing films with the thickness of 20 nm, 30 nm, 200 nm, 220 nm and 240 nm have been deposited onto Ag/glass substrates by radio frequency magnetron (RF) sputtering and thermally treated at 300 deg. C in air for 1 h. The surface morphology of the sample was inspected using an atomic force microscope (AFM). The refractive index of the ZnO films was extracted by using spectroscopic ellipsometry (SE). Theoretical analysis of the sensitivity of the SPR sensors with different ZnO sensing film thickness is discussed, and the experimental results are in agreement with the calculated value. Also, the theoretical calculation of the effects of ZnO film thickness on the SPR curves in the presence of different analytes are presented and studied. It is demonstrated that SPR sensors with angular interrogation may attain higher sensitivity and can detect higher surface environment refractive index with proper ZnO sensing film thickness.

  15. EFFECT OF MOLECULAR WEIGHT AND FILM THICKNESS ON THE CRYSTALLIZATION AND MICROPHASE SEPARATION IN POLYSTYRENE BLOCK-POLY(L-LACTIC ACID) THIN FILMS AT THE EARLY STAGE

    Institute of Scientific and Technical Information of China (English)

    Yu-han Wei; Cai-yuan Pan; Bin-yao Li; Xin-hong Yu; Yan-chun Han

    2011-01-01

    We investigated the effects of molecular weight and film thickness on the crystallization and microphase separation in semicrystalline block copolymer polystyrene-block-poly(L-lactic acid) (PS-b-PLLA) thin films, at the early stage of film evolution (when Ts < T < TODT) by in situ hot stage atomic force microscopy. For PS-b-PLLA 1 copolymer which had lower molecular weight and higher PLLA fraction, diffusion-controlled break-out crystallization started easily.For PS-b-PLLA 2 with higher molecular weight, crystallization in nanometer scales occurs in local area. After melting of the two copolymer films, islands were observed at the film surface: PS-b-PLLA 1 film was in a disordered phase mixed state while PS-b-PLLA 2 film formed phase-separated lamellar structure paralleling to the substratc. Crystallization-melting and van der Waals forces drove the island formation in PS-b-PLLA 1 film. Film thickness affected the crystallization rate. Crystals grew very slowly in much thinner film ofPS-b-PLLA 1 and remained almost unchanged at long time annealing. The incompatibility between PS and PLLA blocks drove the film fluctuation which subsequently evolved into spinodal-like morphology.

  16. Improvement of Flame-made ZnO Nanoparticulate Thick Film Morphology for Ethanol Sensing

    Directory of Open Access Journals (Sweden)

    Sukon Phanichphant

    2007-05-01

    Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis using zinc naphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particles properties were analyzed by XRD, BET. The ZnO particle size and morphology was observed by SEM and HR-TEM revealing spheroidal, hexagonal, and rod-like morphologies. The crystallite sizes of ZnO spheroidal and hexagonal particles ranged from 10-20 nm. ZnO nanorods were ranged from 10-20 nm in width and 20-50 nm in length. Sensing films were produced by mixing the nanoparticles into an organic paste composed of terpineol and ethyl cellulose as a vehicle binder. The paste was doctor-bladed onto Al2O3 substrates interdigitated with Au electrodes. The morphology of the sensing films was analyzed by optical microscopy and SEM analysis. Cracking of the sensing films during annealing process was improved by varying the heating conditions. The gas sensing of ethanol (25-250 ppm was studied at 400 °C in dry air containing SiC as the fluidized particles. The oxidation of ethanol on the surface of the semiconductor was confirmed by mass spectroscopy (MS. The effect of micro-cracks was quantitatively accounted for as a provider of extra exposed edges. The sensitivity decreased notably with increasing crack of sensing films. It can be observed that crack widths were reduced with decreasing heating rates. Crack-free of thick (5 μm ZnO films evidently showed higher sensor signal and faster response times (within seconds than cracked sensor. The sensor signal increased and the response time decreased with increasing ethanol concentration.

  17. Characterization of the optical constants and dispersion parameters of chalcogenide Te40Se30S30 thin film: thickness effect

    Science.gov (United States)

    Abd-Elrahman, M. I.; Hafiz, M. M.; Qasem, Ammar; Abdel-Rahim, M. A.

    2016-02-01

    Chalcogenide Te40Se30S30 thin films of different thickness (100-450 nm) are prepared by thermal evaporation of the Te40Se30S30 bulk. X-ray examination of the film shows some prominent peaks relate to crystalline phases indicating the crystallization process. The calculated particles of crystals from the X-ray diffraction peaks are found to be from 11 to 26 nm. As the thickness increases, the transmittance decreases and the reflectance increases. This could be attributed to the increment of the absorption of photons as more states will be available for absorbance in the case of thicker films. The decrease in the direct band gap with thickness is accompanied with an increase in energy of localized states. The obtained data for the refractive index could be fit to the dispersion model based on the single oscillator equation. The single-oscillator energy decreases, while the dispersion energy increases as the thickness increases.

  18. Anomalous thickness variation of the foam films stabilized by weak non-ionic surfactants.

    Science.gov (United States)

    Qu, Xuan; Wang, Liguang; Karakashev, Stoyan I; Nguyen, Anh V

    2009-09-15

    The constant thickness (H) of metastable free films of various non-ionic surfactant solutions was measured at surfactant concentrations less than the critical micelle concentrations or solubility limits with fixed 5x10(-5) M sodium chloride (NaCl) serving as the background electrolyte. The surfactants include n-pentanol, n-octanol, methyl isobutyl carbinol (MIBC), polypropylene glycol (PPG-400), tetraethylene glycol monooctyl ether (C(8)E(4)), and tetraethylene glycol monodecyl ether (C(10)E(4)). H was interferometrically measured. For each surfactant in this study, the H-versus-surfactant-concentration curve finds a peak at a concentration around 5x10(-6)-1x10(-5) M and a valley at a higher concentration. The measured H values were compared to those predicted from the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory, which considers solely the contribution from electrostatic double-layer repulsion with van der Waals attraction being neglected in the present work. In determining the double-layer repulsion, the ionic strength was determined from the electrolytic conductivity measurement of the film-forming solutions and the surface potential was estimated from the zeta-potential measurement of air bubbles. It was found that the DLVO theory failed to explain the thickness variance with surfactant concentration, implying that additional non-DLVO attractive forces might be required to explain the experimental results. Finally, the possible origins of these attractive forces were discussed.

  19. Platinum and palladium doped tin oxide thick film sensors for sensing methane and hydrogen

    Science.gov (United States)

    Choudhary, Meenakshi; Mishra, V. N.; Dwivedi, R.

    2013-01-01

    In this work, platinum (Pt) and palladium (Pd) doped SnO2 thick film sensors have been developed using solid state derived tin oxide powder. Thick film sensors were fabricated on a 1˝x1˝ alumina substrate. The crystal structure and particle size are confirmed by X-ray diffraction (XRD) pattern. The fabricated sensors are tested for varying concentration (1-5%) of hydrogen and methane gas at different operating temperatures (200-350 °C). The effect of Pt and Pd doping have been analysed on different operating temperature, sensitivity and response/recovery time. The doping effects are also very important from view point of the gas selectivity. Based on the experimental results, we have observed the formation of tetragonal structure and particle size of the powders is drastically decreases from 26 to 19 nm after replacing the platinum dopant with palladium. Both the doped sensors have been found to be sensitive for hydrogen as compare to methane however, Pd-doped SnO2 sensor are most selective for hydrogen with very fast response and recovery time (20 s, 101 s) due to the small size effect.

  20. Thick-film force, slip and temperature sensors for a prosthetic hand

    Science.gov (United States)

    Cranny, A.; Cotton, D. P. J.; Chappell, P. H.; Beeby, S. P.; White, N. M.

    2005-04-01

    Thick-film static and dynamic force sensors have been investigated for their suitability to measure the grip forces exerted upon an object held by a prosthetic hand, and to detect and correspondingly react to the possible slip of a gripped item. The static force sensors exploit the piezoresistive characteristics of commercially available thick-film pastes whilst the dynamic slip sensors utilize the piezoelectric behaviour of proprietary PZT (lead zirconate titanate) pastes. The sensors are located upon stainless steel cantilever type structures that will be placed at the fingertips of each digit of the prosthetic hand. Temperature sensors are also included to provide temperature compensation for the force sensors and to prevent accidental thermal damage to the prosthesis. Results have shown that the static force sensor is capable of measuring fingertip forces in excess of 100 N, with an electrical half-bridge configuration sensitivity approaching 10 µV V-1 N-1 (with scope for improvement) and maximum hysteresis below 4% of full scale, depending on the manner in which the cantilever sensor array is attached to the finger. Failure in the bonding mechanism that secures the PZT layer to the stainless steel cantilever meant that the proposed dynamic force sensor could not be evaluated. However, investigations using the same sensor design fabricated on an alumina substrate have shown the potential of the PZT dynamic force sensor to measure the vibration and hence potentially operate as a slip sensor.

  1. 厚膜金导体浆料%Thick-Film Gold Conductor Pastes

    Institute of Scientific and Technical Information of China (English)

    李世鸿

    2001-01-01

    概括介绍了厚膜金导体浆料。通过改变金粉、粘结剂和有机载体等主要组份的类型和含量,可以制得多种金浆料。①粘结剂类型对厚膜金导体的性能有较大的影响。根据附着机理分类,厚膜金导体分为4种主要类型,即玻璃结合型、反应结合型、混合结合型和表面活化结合型。②金粉颗粒的均匀性、单分散性、表面形态及尺寸对浆料的印刷性能和烧结性能影响大。颗粒表面越光滑,对提高印刷性能越有利。光滑的表面吸附有机载体较少,可减少导体膜在烘干—烧结时的收缩率。③有机载体的含量和流变学性能影响金浆料的印刷性能及烘干—烧结时的收缩率。④金浆中添加起合金化作用的元素,可提高导体在铝丝键合体系及Pb-In焊接体系的热老化性能。⑤为适应新的厚膜工艺技术的需要,研制可光刻的厚膜金导体浆料和金的金属有机浆料[Au MOC]。%Thick-film gold conductor pastes are summarized in this paper.Many kinds of gold pastes are made by changing types and contents of main components such as gold powder,binder and organic vehicle.1.The types of binders deeply affect the characteristics of thick-film gold conductors.Depending on the adhesion mechanisms,thick-film gold conductors are classified into four main types:the fritted-bonded,the reactivity-bonded,the mixed-bonded and the surface activated-bonded systems.2.The homogeneity,monodisperesability,morphology and size of the gold powder particles greatly influence the paste printability and sintering properties.The smoother surface renders the pastes greater printability,and the lower vehicle absorption rate resulting from smooth surface can reduce shrinkage.3.The content and rheology of organic vehicle influence the paste printability and dried-fired shinkage.4.The addition of alloyed elements to gold pastes can improve the thermal-ageing performance in Al-wire bonding and

  2. Thickness dependence of dispersion parameters of the MoO{sub x} thin films prepared using the vacuum evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Akın, Ümmühan, E-mail: uakin@selcuk.edu.tr; Şafak, Haluk

    2015-10-25

    The optical behaviors of molybdenum oxide thin films are highly important due to their widespread applications. In the present paper, the effect of thickness on the structure, morphology and optical properties of molybdenum oxide (MoO{sub x}) thin films prepared on Corning glass substrates using thermal evaporation technique was studied. The structure and morphology of films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively, while their optical properties were investigated by UV-VIS-NIR spectrophotometry in the spectral range from 300 to 2500 nm. It was observed that whole films have amorphous structure and also they showed rather high transmittance values reached nearly up to 90%. Absorption analysis showed two types of electronic transitions; both direct and indirect interband transition energy values of films decrease from 4.47 to 3.45 eV and from 3.00 to 2.75 eV, respectively, with increasing the film thickness, while the width of the localized states tail increases with thickness. This decrease in the band gap value can be attributed to the rising oxygen-ion vacancy densities with the thickness. The refractive indices of films were calculated from Sellmeier coefficients determined by nonlinear curve fitting method based on the measured transmittance spectral data. The dispersion of the refractive index was discussed in terms of the Wemple-DiDomenico single-oscillator model. The dispersion parameters such as average oscillator energy, E{sub o}, the dispersion energy, E{sub d}, and static refractive index n{sub o} were evaluated and they found to vary significantly with the film thickness. - Highlights: • MoO{sub x} thin films with different thickness were prepared using the vacuum evaporation technique. • The variation of fundamental absorption edge with the film thickness was determined. • A detailed dispersion analysis based on the Wemple-DiDomenico model was performed. • The dependence of all

  3. Quality estimation of thick-film resistor terminations based on electrical parameters extraction

    Science.gov (United States)

    Kiełbasiński, Konrad; Jakubowska, Małgorzata; Kalenik, Jerzy; Młożniak, Anna

    2008-01-01

    The RoHS and WEEE regulation forced the large investigations for environmental friendly materials in electronic. The Lead and cadmium which was the significant component of resistors and conductors used in thick-film technology have to be replaced. Quick and precise measurement techniques need to be elaborated to maintain consumer's demand. Usually the test samples with the conductive and resistive layers were used for electrical parameters measurements. The layer thickness measurements and mean value of resistance allowed calculating the sheet resistance. Such a method of measurement have very serious disadvantage. The calculated mean value can be significantly affected by resistors terminations, especially if silver conductor is used, which is known as an easily migrating material. The solution was known and involved preparing and printing samples with the reference terminations. Silver platinum and silver palladium conductors are less susceptible to migration, therefore they were used in previous investigations. The reference terminations improves the precision of calculating sheet resistance, however they enlarges the number of measurements and its influence could still be significant. The authors proposed completely new method of sheet resistance calculation. Such a calculated value called True Sheet Resistance do not depend on the phenomena taking place at the termination, The second evaluated value called Offset indicates the influence of the terminations on measured resistance, and also termination quality. Its value is correlated with the diffusion rate at the interface between conductive film and resistive film at the termination. The usability of this method was proven by performing multiple firing test. One kind of resistive layer was printed on different kinds of conductive layers. The samples were fired sequently and measured. Then the old method of resistor properties evaluation was compared to the new one.

  4. The Effect of Deposition Time on Textured Magnesium Diboride Thick Films Fabricated by Electrophoretic Deposition

    Directory of Open Access Journals (Sweden)

    W. G. Mutia

    2004-12-01

    Full Text Available MgB2 powders suspended in ethanol were electrophoretically deposited on high-purity molybdenum substrates having dimensions of 1 x 0.3 x 0.01 cm. The said substrate was set as the cathode and was placed 0.5 cm away from a graphite rod anode. A current density of ~0.02 mA/cm2 and a voltage of 600 V were applied. The effect of deposition time was studied by varying it as follows: 15 s, 30 s, 1 min, and 2 min. Heat treatment at 950 oC for 3 h was done after deposition. MgB2 thick films were successfully fabricated for the deposition carried out for 2 min. Deposition times less than 2 min resulted in insufficient deposited powder; hence formation of MgB2 was not facilitated. Films deposited at 15 and 30 s have good surface characteristics, wherein no microcracks were present. X-ray diffraction and surface image analysis reveal that the deposited films have a preferred orientation along the (10l direction.

  5. Synthesis and Characterization of Vanadium Doped Zinc Oxide Thick Film for Chemical Sensor Application

    Directory of Open Access Journals (Sweden)

    Rayees Ahmad Zargar

    2015-01-01

    Full Text Available Zinc oxide and vanadium pentoxide nanoparticles derived by chemical coprecipitation route were used to cast Zn0.96V0.04O thick film by screen printing method. The structural, morphological, optical, and electrical properties of the film were characterized by powder XRD, SEM, Raman, UV-VIS, and DC conductivity techniques. XRD pattern, SEM image, and Raman spectrum of the film confirm the single phase formation of Wurtzite structure with preferential orientation along [101] plane, minor variation in lattice parameters, and vanadium ions substitution at zinc sites. Zn0.96V0.04O pellet has been used for sensing ammonia vapor concentrations in 20–50°C temperature range which exhibits maximum responsiveness and sensitivity at 30°C. The minor variations in resistance are observed with ammonia vapor concentration. The adsorption of ammonia vapors through weak hydrogen bonding and its insertion into lattice by nitrogen lone pairs donation at vacant/defect sites in lattice caused by vanadium doping are considered to explain gas sensing mechanism.

  6. In line NIR quantification of film thickness on pharmaceutical pellets during a fluid bed coating process.

    Science.gov (United States)

    Lee, Min-Jeong; Seo, Da-Young; Lee, Hea-Eun; Wang, In-Chun; Kim, Woo-Sik; Jeong, Myung-Yung; Choi, Guang J

    2011-01-17

    Along with the risk-based approach, process analytical technology (PAT) has emerged as one of the key elements to fully implement QbD (quality-by-design). Near-infrared (NIR) spectroscopy has been extensively applied as an in-line/on-line analytical tool in biomedical and chemical industries. In this study, the film thickness on pharmaceutical pellets was examined for quantification using in-line NIR spectroscopy during a fluid-bed coating process. A precise monitoring of coating thickness and its prediction with a suitable control strategy is crucial to the quality assurance of solid dosage forms including dissolution characteristics. Pellets of a test formulation were manufactured and coated in a fluid-bed by spraying a hydroxypropyl methylcellulose (HPMC) coating solution. NIR spectra were acquired via a fiber-optic probe during the coating process, followed by multivariate analysis utilizing partial least squares (PLS) calibration models. The actual coating thickness of pellets was measured by two separate methods, confocal laser scanning microscopy (CLSM) and laser diffraction particle size analysis (LD-PSA). Both characterization methods gave superb correlation results, and all determination coefficient (R(2)) values exceeded 0.995. In addition, a prediction coating experiment for 70min demonstrated that the end-point can be accurately designated via NIR in-line monitoring with appropriate calibration models. In conclusion, our approach combining in-line NIR monitoring with CLSM and LD-PSA can be applied as an effective PAT tool for fluid-bed pellet coating processes.

  7. Thickness controlled sol-gel silica films for plasmonic bio-sensing devices

    Science.gov (United States)

    Figus, Cristiana; Quochi, Francesco; Artizzu, Flavia; Saba, Michele; Marongiu, Daniela; Floris, Francesco; Marabelli, Franco; Patrini, Maddalena; Fornasari, Lucia; Pellacani, Paola; Valsesia, Andrea; Mura, Andrea; Bongiovanni, Giovanni

    2014-10-01

    Plasmonics has recently received considerable interest due to its potentiality in many fields as well as in nanobio-technology applications. In this regard, various strategies are required for modifying the surfaces of plasmonic nanostructures and to control their optical properties in view of interesting application such as bio-sensing, We report a simple method for depositing silica layers of controlled thickness on planar plasmonic structures. Tetraethoxysilane (TEOS) was used as silica precursor. The control of the silica layer thickness was obtained by optimizing the sol-gel method and dip-coating technique, in particular by properly tuning different parameters such as pH, solvent concentration, and withdrawal speed. The resulting films were characterized via atomic force microscopy (AFM), Fourier-transform (FT) spectroscopy, and spectroscopic ellipsometry (SE). Furthermore, by performing the analysis of surface plasmon resonances before and after the coating of the nanostructures, it was observed that the position of the resonance structures could be properly shifted by finely controlling the silica layer thickness. The effect of silica coating was assessed also in view of sensing applications, due to important advantages, such as surface protection of the plasmonic structure.

  8. Thickness controlled sol-gel silica films for plasmonic bio-sensing devices

    Energy Technology Data Exchange (ETDEWEB)

    Figus, Cristiana, E-mail: cristiana.figus@dsf.unica.it; Quochi, Francesco, E-mail: cristiana.figus@dsf.unica.it; Artizzu, Flavia, E-mail: cristiana.figus@dsf.unica.it; Saba, Michele, E-mail: cristiana.figus@dsf.unica.it; Marongiu, Daniela, E-mail: cristiana.figus@dsf.unica.it; Mura, Andrea; Bongiovanni, Giovanni [Dipartimento di Fisica - University of Cagliari, S.P. Km 0.7, I-09042 Monserrato (Canada) (Italy); Floris, Francesco; Marabelli, Franco; Patrini, Maddalena; Fornasari, Lucia [Dipartimento di Fisica - University of Pavia, Via Agostino Bassi 6, I-27100 Pavia (PV) (Italy); Pellacani, Paola; Valsesia, Andrea [Plasmore S.r.l. -Via Grazia Deledda 4, I-21020 Ranco (Vatican City State, Holy See) (Italy)

    2014-10-21

    Plasmonics has recently received considerable interest due to its potentiality in many fields as well as in nanobio-technology applications. In this regard, various strategies are required for modifying the surfaces of plasmonic nanostructures and to control their optical properties in view of interesting application such as bio-sensing, We report a simple method for depositing silica layers of controlled thickness on planar plasmonic structures. Tetraethoxysilane (TEOS) was used as silica precursor. The control of the silica layer thickness was obtained by optimizing the sol-gel method and dip-coating technique, in particular by properly tuning different parameters such as pH, solvent concentration, and withdrawal speed. The resulting films were characterized via atomic force microscopy (AFM), Fourier-transform (FT) spectroscopy, and spectroscopic ellipsometry (SE). Furthermore, by performing the analysis of surface plasmon resonances before and after the coating of the nanostructures, it was observed that the position of the resonance structures could be properly shifted by finely controlling the silica layer thickness. The effect of silica coating was assessed also in view of sensing applications, due to important advantages, such as surface protection of the plasmonic structure.

  9. Thickness-dependent retention behaviors and ferroelectric properties of BiFeO3 thin films on BaPbO3 electrodes

    Science.gov (United States)

    Lee, Chia-Ching; Wu, Jenn-Ming

    2007-09-01

    BiFeO3 (BFO) thin films produced with varied film thicknesses ranging from 100to230nm were fabricated on BaPbO3(BPO )/Pt/Ti/SiOx/Si substrates by rf-magnetron sputtering. Saturated polarization-electrical field hysteresis loops, polarization response by pulse measurement, and retention properties were obtained for BFO films with various thicknesses on BPO. The retention behaviors of BFO demonstrate logarithmic time dependence and stretched exponential law. When the thicknesses of BFO films increase, the contribution of logarithmic time dependence to retention, the stretched exponential law becomes dominant. BFO films with thinner thickness exhibit better retention properties but possess smaller remnant polarization.

  10. Structural, morphological, optical and electrical properties of NiO films prepared on Si (100) and glass substrates at different thicknesses

    Science.gov (United States)

    Ahmed, Anas A.; Afzal, Naveed; Devarajan, Mutharasu; Subramani, Shanmugan

    2016-11-01

    In this work, structural, surface, optical and electrical properties of NiO films were studied at different film thicknesses. The NiO films of different thicknesses in the range 330-920 nm were prepared on Si (100) and glass substrates by using radiofrequency magnetron sputtering of NiO target at 100 °C. The structural study through XRD indicated polycrystalline NiO films with preferred orientation along (200) plane. The crystalline quality of the films was improved with increase of the film thickness on both substrates, however, the films prepared on Si (100) displayed better crystallinity as compared to the films prepared on the glass. The morphological features of the film as studied through FE-SEM displayed an increase of grain size with increase of its thickness, however, the grain size of the film on Si (100) was found to be slightly larger than that of the glass. The band gap of NiO film was decreased with increase of the film thickness on both the substrates. The films grown on Si (100) exhibited superior electrical properties as compared to the films prepared on glass at all film thicknesses.

  11. Structural and Dielectric Properties of Dy-doped( Ba, Sr, Ca) TiO3 Thick Films

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Preparation and electrocatalytic activities of Pt-TiO2 nanotubes (Ba0.57Sr0.33Ca0.10)TiO3 powders, prepared by the sol-gel method, were doped MnCO3 as acceptor and Dy2O3 as donor. This powder was mixed with an organic vehicle and BSCT thick films were fabricated by the screen-printing techniques on alumina substrate. The structural and dielectric properties of BSCT thick films were investigated with variation of Dy2O3 amount. As a result of the differential thermal analysis (DTA), exothermic peak was observed at around 670℃ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films showed the XRD patterns of a typical polycrystalline perovskite structure. The average grain size of BSCT thick films decreased with increasing amount of Dy2O3. The relative dielectric constant and dielectric loss of the BSCT thick film doped Dy2O3 0. 1mol% were 4637.4 and 1.6% at 1kHz, respectively.

  12. Thickness Determination for a Two-Layered Composite of a Film and a Plate by Low-Frequency Ultrasound

    Institute of Scientific and Technical Information of China (English)

    MAO Jie; LI Ming-Xuan; WANG Xiao-Min

    2007-01-01

    We present an ultrasonic method for determining the thickness of a composite consisting of a soft thin film attached to a hard plate substrate, by resonance spectra in the low frequency region. The interrogating waves can be incident only to the two-layered composite from the substrate side. The reflection spectra are obtained by FFT analysis of the compressive pulsed echoes from the composite, and the thicknesses of the film and the substrate are simultaneously inversed by the simulated annealing method from the resonant frequencies knowing other acoustical parameters in prior. The sensitivity of the method to individual thickness, its convergence and stability against experimental noises are studied. Experiment with interrogating wavelength 4 times larger than the film thickness in a sample of a polymer film (0.054 mm) on an aluminium plate (6.24 mm) verifies the validity of the method. The average relative errors in the measurement of the thicknesses of the film and the substrate are found to be -4.1% and -0.62%, respectively.

  13. Electro-optical and dielectric properties of a high tilt antiferroelectric liquid crystal mixture (W-193B)

    Energy Technology Data Exchange (ETDEWEB)

    Nayek, Prasenjit; Ghosh, Sharmistha; Kundu, Sudarshan; Roy, Subir Kr [Department of Spectroscopy, Indian Association for the Cultivation of Science, Jadavpur, Calcutta-700032 (India); Majumder, Tapas Pal [Department of Physics, University of Kalyani, Kalyani-741235, West Bengal (India); Bennis, Noureddine; Oton, Jose Manuel [Department of TecnologIa Fotonica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria, 28040 Madrid (Spain); Dabrowski, Roman, E-mail: spskr@iacs.res.i [Institute of Chemistry, Military University of Technology, 00-908 Warsaw (Poland)

    2009-11-21

    The electro-optical properties and dielectric relaxation have been investigated for an antiferroelectric liquid crystal mixture W-193B. The material exhibits smectic A*, smectic C* and a wide range of anticlinic smectic C{sub A}{sup *} phases. The high tilt and broad room temperature smectic C{sub A}{sup *} phase make it a good candidate for antiferroelectric display materials. Dielectric studies have been made in a planarly aligned cell in the frequency range 10 Hz-13 MHz. Dielectric spectroscopy reveals the existence of soft mode in the smectic A* phase and Goldstone mode in the smectic C* phase. In the smectic C{sub A}{sup *} phase the dielectric spectrum of the material exhibits two absorption peaks related to the rotational fluctuation around the short axis of the molecules and antiphase azimuthal angle fluctuation, respectively, and are separated by about two orders of frequency. Electro-optical response using a low frequency triangular wave showed a very high quasi-static contrast ratio of 132 : 1, threshold voltage of around 7 V and saturation of 17 V. Surface-stabilized, low thickness cells of this mixture showed a perfect double hysteresis loop with a 1 Hz triangular signal, reaching different transmission levels for different voltage amplitudes. These levels can be stabilized with a single holding voltage, making it possible for the material to be passively multiplexed at video rate.

  14. In-situ, variable thickness, liquid crystal film target formation at moderate repetition rate for intense laser applications

    CERN Document Server

    Poole, P L; Cochran, G E; Hanna, R J; Andereck, C D; Schumacher, D W

    2015-01-01

    Liquid crystal films have recently been demonstrated as variable thickness, planar targets for ultra-intense laser matter experiments and applications such as ion acceleration. By controlling the parameters of film formation, including liquid crystal temperature and volume, their thickness can be varied on-demand from 10 $nm$ to above 10 $\\mu m$. This thickness range enables for the first time real-time selection and optimization of various ion acceleration mechanisms using low cost, high quality targets. Our previous work employed these targets in single shot configuration, requiring chamber cycling after the pre-made films were expended. Presented here is a film formation device capable of drawing films from a bulk liquid crystal source volume to any thickness in the aforementioned range. This device will form films under vacuum within 2 $\\mu m$ of the same location each time, well within the Rayleigh range of even tight $F/ \\#$ systems. The repetition rate of the device exceeds 0.1 $Hz$ for sub-100 $nm$ fi...

  15. Cross-sectional nanoindentation (CSN) studies on the effect of thickness on adhesion strength of thin films

    Science.gov (United States)

    Roshanghias, A.; Khatibi, G.; Pelzer, R.; Steinbrenner, J.; Bernardi, J.

    2015-01-01

    In this study the cross-sectional nanoindentation (CSN) technique has been employed to investigate the adhesion behavior of Titanium-Tungsten (TiW) thin films in various thicknesses on silicon substrate. Furthermore, the nanoindentation-induced blister (NIB) technique has been implemented on the same samples to evaluate the adhesion energy of the films with a different approach. The adhesion energy release rate of these thin films, derived by these two techniques, revealed a good agreement. Accordingly, the results show that as the thickness of the TiW layer increases, the adhesion toughness of the film decreases. It was suggested that three factors might be responsible for the superior adhesion strength of thin films with lower thicknesses: higher surface energy due to the smaller mean grain size; higher constraint from the substrate, which causes inferior fracture toughness of the coating and facilitates crack deflection from interface to surface; and, energy dissipation due to decohesion. The thickness dependency of the transition between delamination and decohesion mechanism in thin films has also been discussed and modelled.

  16. Thick REBaCuO superconducting films through single-coating of low-fluorine metallorganic solution

    Science.gov (United States)

    Boubeche, M.; Cai, C. B.; Jian, H. B.; Li, M. J.; Yang, W. T.; Liu, Z. Y.; Bai, C. Y.

    2016-10-01

    A high critical current Ic is crucial for the application of high temperature superconductors YBa2Cu3O7-δ in energy efficient power devices and wires. In this paper we report the fabrication of thick (YGd)1.3Ba2Cu3O7-x films on a metal substrate using low-fluorine metal organic deposition method. The effects of the film thickness on the microstructure, texture and superconductivity properties of the films were evaluated. In order to increase the film thicknesses by single coating, the influence of withdrawal speed during the dip coating on resulting thickness are investigated with the other processing parameters fixed. It is revealed that there is a maximum thickness for a certain starting solution. Here we used 3 different solutions, Conventional Low Fluorine solutions with 2 M and 2.5 M, and super low-fluorine solution with 2.5 M. The maximum thicknesses of about 710 nm, 1280 nm and 1460 nm were obtained, respectively.

  17. Robust, functionalizable, nanometer-thick poly(acrylic acid) films spontaneously assembled on oxidized aluminum substrates: structures and chemical properties.

    Science.gov (United States)

    Koo, Eunhae; Yoon, Sungho; Atre, Sundar V; Allara, David L

    2011-04-05

    Immersion of oxidized aluminum substrates in ethanol solutions of poly(acrylic acid) (PAA), followed by extensive solvent immersion, results in tenaciously chemisorbed, nanometer scale, controllable thickness films for a wide range of solution concentrations and molecular weights. Atomic force microscope images reveal isolated polymer globules from adsorption in low-concentration solutions with crossover to conformal, highly uniform, nanometer-thickness films at higher concentrations, an indication that the chemisorbing chains start to overlap and trap underlying segments to form planar chemisorbed films only two or three chains in thickness. Quantitative IR reflection spectroscopy in combination with chemical derivitization on a standard set of 1.0(±0.2) nm thick films reveals a film structure with 5.5(±1) chemisorbed -CO(-)(2) groups/nm(2) and 6.3 unattached -CO(2)H groups/nm(2), with up to ∼3.6/nm(2) available for chemical derivitization, a comparable number to typical self-assembled monolayer coverages of ∼4-5 molecules/nm(2). Thermal treatment of the ∼1 nm chemisorbed films, at even extreme temperatures of ∼150 °C, results in almost no anhydride formation via adjacent -CO(2)H condensation, in strong contrast to bulk PAA, a clear indication that the films have a frozen glass structure with effectively no segment and side group mobility. Overall, these results demonstrate that these limiting thickness nanometer films provide a model surface for understanding the behavior of strongly bound polymer chains at substrates and show potential as a path to creating highly stable, chemically functionalized inorganic substrates with highly variable surface properties.

  18. Small hysteresis and high energy storage power of antiferroelectric ceramics

    Science.gov (United States)

    Wang, Jinfei; Yang, Tongqing; Chen, Shengchen; Yao, Xi

    2014-09-01

    In this paper, modified Pb(Zr,Ti)O3(PZT) antiferroelectric (AFE) ceramics system was investigated by traditional solid state method. It was observed that the effect of different contents of Zr/Sn, Zr/Ti on modified PZT antiferroelectrics. With increasing Zr/Sn content, the EAFE (electric field of AFE phase to ferroelectric (FE) phase) value was enlarged. The phase switch field was reduced from FE to AFE (EFA). The hysteresis loops were changed from "slanted" to "square"-types. With increasing Zr/Ti concentrate, the EAFE value, and also the EFA was enlarged, while the hysteresis switch ΔE was reduced. The hysteresis loops was from "square" to "slanted"-types. The samples with square hysteresis loops are suitable for energy storage capacitor applications, the composition of ceramics was Pb0.97La0.02(Zr0.90Sn0.05Ti0.05)O3, which have the largest energy storage density 4.426J/cm3 at 227 kV/cm, and ΔE was 80 kV/cm, energy efficient η was about 0.612.

  19. Thickness-dependence of optical constants for Ta{sub 2}O{sub 5} ultrathin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao [Fudan University, Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Department of Optical Science and Engineering, Shanghai (China)

    2012-09-15

    An effective method for determining the optical constants of Ta{sub 2}O{sub 5} thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta{sub 2}O{sub 5} thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta{sub 2}O{sub 5} ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta{sub 2}O{sub 5}. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices. (orig.)

  20. Nanoindentation measurements of the mechanical properties of polycrystalline Au and Ag thin films on silicon substrates: Effects of grain size and film thickness

    Energy Technology Data Exchange (ETDEWEB)

    Cao Yifang [Princeton Institute for the Science and Technology of Materials (PRISM) and Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ 08544 (United States)]. E-mail: yifangc@princeton.edu; Allameh, Seyed [Princeton Institute for the Science and Technology of Materials (PRISM) and Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ 08544 (United States); Nankivil, Derek [Department of Mechanical, Materials and Aerospace Engineering, University of Central Florida, 4000 Central Florida Boulevard, Orlando, FL 32816 (United States); Sethiaraj, Steve [Department of Physics, University of Botswana, Private Bag UB 0022, Gaborone (Botswana); Otiti, Tom [Department of Physics, Makerere University, Kampala (Uganda); Soboyejo, Wole [Princeton Institute for the Science and Technology of Materials (PRISM) and Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ 08544 (United States)

    2006-07-15

    This paper presents the results of nanoindentation experimental studies of the contact-induced deformation in Au and Ag thin films. The paper examines the effects of film thickness and substrate deformation restraint on the mechanical properties of electron beam (e-beam) deposited Au and Ag films. Following a brief description of film microstructure, surface topography, and contact-induced pile-up deformation, film mechanical properties (hardness and Young's modulus) were determined using nanoindentation techniques. The indentation size effects (ISE) observed in films with different thicknesses were explained using a mechanism-based strain gradient (MSG) theory. The intrinsic film yield strengths and hardnesses extracted from the MSG theory are shown to exhibit classical Hall-Petch dependence on the inverse square root of the average film grain size. Displacement bursts were also found to occur in Ag films at indentation load levels of 100 {mu}N. These were attributed to the initial onset of dislocation slip activity, when the shear stress exceeds the estimated theoretical shear strengths of the materials.

  1. Fabrication of YBCO/YSZ and YBCO/MgO thick films using electrophoretic deposition with top-seeded melt growth process

    Institute of Scientific and Technical Information of China (English)

    Zhu Ya-Bin; Zhou Yue-Liang; Wang Shu-Fang; Liu Zhen; Zhang Qin; Chen Zheng-Hao; Lü Hui-Bin; Yang Guo-Zhen

    2004-01-01

    Superconducting thick films were grown on single crystals MgO and YSZ by electrophoretic deposition with Y2BaCuOs(Y211) addition. YBCO thick films were then accomplished by sintering the precursor films above the peritectic temperature. Single crystals of MgO (3×3×0.5mm3) were used as top-seed to control crystal structure of the thick films. As shown by scanning electron microscopy, the morphologies of YBCO/YSZ and YBCO/MgO thick films are spherulitic texture and platelet type. The critical temperature is ~89 K for the YBCO/YSZ thick film; the onset transition temperature is 86.4 K and the transition width is ~3 K for YBCO/MgO thick film. The critical current densities (as determined by Bean model) are, in A/cm2, 3870 (77K) for YBCO/YSZ thick films and 2399 (77K) for YBCO/MgO thick films, which are comparable to the best Jc reported of the thick films prepared by the same method.

  2. Wrinkling of a stiff thin film bonded to a pre-strained, compliant substrate with finite thickness.

    Science.gov (United States)

    Ma, Yinji; Xue, Yeguang; Jang, Kyung-In; Feng, Xue; Rogers, John A; Huang, Yonggang

    2016-08-01

    A stiff thin film bonded to a pre-strained, compliant substrate wrinkles into a sinusoidal form upon release of the pre-strain. Many analytical models developed for the critical pre-strain for wrinkling assume that the substrate is semi-infinite. This critical pre-strain is actually much smaller than that for a substrate with finite thickness (Ma Y et al. 2016 Adv. Funct. Mater. (doi:10.1002/adfm.201600713)). An analytical solution of the critical pre-strain for a system of a stiff film bonded to a pre-strained, finite-thickness, compliant substrate is obtained, and it agrees well with the finite-element analysis. The finite-thickness effect is significant when the substrate tensile stiffness cannot overwhelm the film tensile stiffness.

  3. Enhanced selectivity of boron doped diamond electrodes for the detection of dopamine and ascorbic acid by increasing the film thickness

    Science.gov (United States)

    Qi, Yao; Long, Hangyu; Ma, Li; Wei, Quiping; Li, Site; Yu, Zhiming; Hu, Jingyuan; Liu, Peizhi; Wang, Yijia; Meng, Lingcong

    2016-12-01

    In this paper, boron doped diamond (BDD) with different thickness were prepared by hot filament chemical vapor deposition. The performance of BDD electrodes for detecting dopamine (DA) and ascorbic acid (AA) were investigated. Scanning electron microscopy and Raman spectra reveal the grain size increases and the film quality improves with the increase of film thickness. Electrochemical test show that the transfer coefficient in [Fe3 (CN) 6]3-/4- redox system increases with the increase of the film thickness. The results of selectivity and sensitivity for DA mixed with AA detection show that 8h-BDD and 12h-BDD electrodes possess well selective separated oxidation peaks of DA and AA, and the 12h-BDD electrode exhibits optimal sensitivity until the DA concentration drops to 1 μ M.

  4. Piezoelectric and Magnetoelectric Thick Films for Fabricating Power Sources in Wireless Sensor Nodes

    Directory of Open Access Journals (Sweden)

    Jong-Jin Choi

    2009-08-01

    Full Text Available In this manuscript, we review the progress made in the synthesis of thick film-based piezoelectric and magnetoelectric structures for harvesting energy from mechanical vibrations and magnetic field. Piezoelectric compositions in the system Pb(Zr,TiO3–Pb(Zn1/3Nb2/3O3 (PZNT have shown promise for providing enhanced efficiency due to higher energy density and thus form the base of transducers designed for capturing the mechanical energy. Laminate structures of PZNT with magnetostrictive ferrite materials provide large magnitudes of magnetoelectric coupling and are being targeted to capture the stray magnetic field energy. We analyze the models used to predict the performance of the energy harvesters and present a full system description.

  5. Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Borregaard, Louise M.

    2012-01-01

    This paper presents a homogeneity analysis of a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibration energy harvesters aimed towards vibration sources with peak vibrations in the range of around 300Hz. A wafer with a yield of 91% (41/45 devices) has been...... indicating that the main variation in open circuit voltage performance is caused by varying quality factor. The average resonant frequency was measured to 333Hz with a standard variation of 9.8Hz and a harvesting bandwidth of 5-10Hz. A maximum power output of 39.3μW was achieved at 1g for the best performing...... harvester....

  6. Fabrication and characterization of MEMS-based PZT/PZT bimorph thick film vibration energy harvesters

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2012-01-01

    We describe the fabrication and characterization of a significantly improved version of a microelectromechanical system-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass; the harvester is fabricated in a fully monolithic process. The main advantage...... of bimorph vibration energy harvesters is that strain energy is not lost in mechanical support materials since only Pb(ZrxTi1-x)O3 (PZT) is strained; as a result, the effective system coupling coefficient is increased, and thus a potential for significantly higher output power is released. In addition, when...... the two layers are connected in series, the output voltage is increased, and as a result the relative power loss in the necessary rectifying circuit is reduced. We describe an improved process scheme for the energy harvester, which resulted in a robust fabrication process with a record high fabrication...

  7. Formation and physical properties of YBCO thick films grown by using the electrophoretic deposition method

    CERN Document Server

    Kim, U J; Kim, Y C; Han, S K; Kang, K Y

    1999-01-01

    Thick films of the YBa sub 2 Cu sub 3 O subgamma sub - subdelta (YBCO) superconductor were prepared by using the electrophoretic deposition technique and a flexible wire as the substrate. The transition temperature of the wires was 91 K, the intragranular magnetic critical current density J sub c sub g sup m sup a sup g was about 10 sup 5 A/cm sup 2 at 77 K in a weak field, and the transport J sub c sup t sup r sup a sup n sup s was about 365 A/cm sup 2 at 77 K. We calculated the intergranular magnetic critical current J sub c sub J sup m sup a sup g and the activation energy from the AC-susceptibility measurements, and their values were about 444 A/cm sup 2 at 77 K and 2.02 eV, respectively.

  8. Micro-particle manipulation by single beam acoustic tweezers based on hydrothermal PZT thick film

    Directory of Open Access Journals (Sweden)

    Benpeng Zhu

    2016-03-01

    Full Text Available Single-beam acoustic tweezers (SBAT, used in laboratory-on-a-chip (LOC device has promising implications for an individual micro-particle contactless manipulation. In this study, a freestanding hydrothermal PZT thick film with excellent piezoelectric property (d33 = 270pC/N and kt = 0.51 was employed for SBAT applications and a press-focusing technology was introduced. The obtained SBAT, acting at an operational frequency of 50MHz, a low f-number (∼0.9, demonstrated the capability to trap and manipulate a micro-particle sized 10μm in the distilled water. These results suggest that such a device has great potential as a manipulator for a wide range of biomedical and chemical science applications.

  9. Micro-particle manipulation by single beam acoustic tweezers based on hydrothermal PZT thick film

    Science.gov (United States)

    Zhu, Benpeng; Xu, Jiong; Li, Ying; Wang, Tian; Xiong, Ke; Lee, Changyang; Yang, Xiaofei; Shiiba, Michihisa; Takeuchi, Shinichi; Zhou, Qifa; Shung, K. Kirk

    2016-01-01

    Single-beam acoustic tweezers (SBAT), used in laboratory-on-a-chip (LOC) device has promising implications for an individual micro-particle contactless manipulation. In this study, a freestanding hydrothermal PZT thick film with excellent piezoelectric property (d33 = 270pC/N and kt = 0.51) was employed for SBAT applications and a press-focusing technology was introduced. The obtained SBAT, acting at an operational frequency of 50MHz, a low f-number (∼0.9), demonstrated the capability to trap and manipulate a micro-particle sized 10μm in the distilled water. These results suggest that such a device has great potential as a manipulator for a wide range of biomedical and chemical science applications. PMID:27014504

  10. DEPENDENCE OF DOMAIN STRUCTURES ON Au THICKNESS IN Co/Au MULTILAYER FILMS

    Institute of Scientific and Technical Information of China (English)

    1998-01-01

    The magnetic force images and surface topography images of sputtered Co/Au multilayer films in remnant state were measured by magnetic force microscopy. From the surface magnetic structures shown in the magnetic force images it can be seen that the domain pattern and size vary with the increase of the thickness t of the non-ferromagnetic Au layer remarkably. With the measurements of the effective perpendicular anisotropy Ku and the domain period d, it was found that there are similar trends of d and Ku as functions of t. The variations of the domain pattern and size were qualitatively interpreted in terms of magnetic domain theory, the theoretical relations of d and the domain wall energy ow vs t were calculated. As t = 8.5 AL(1AL=0.235nm), the largest ow is 11mJ/m2.

  11. Generation of Bessel Surface Plasmon Polaritons in a Finite-Thickness Metal Film

    Directory of Open Access Journals (Sweden)

    S. N. Kurilkina

    2013-01-01

    Full Text Available A theory of generation of low- and high-index Bessel surface plasmon polaritons and their superposition in a metal film of a finite thickness is developed. Correct analytical expressions are obtained for the field of two families of Bessel surface plasmon polariton modes formed inside and outside the metal layer. The intensity distribution near the boundary of the layer has been calculated and analyzed. A scheme for the experimental realization of a superposition of Bessel surface plasmon polaritons is suggested. Our study demonstrates that it is feasible to use the superposition of Bessel surface plasmon polaritons as a virtual tip for near-field optical microscopy with a nanoscale resolution.

  12. Strain-induced perpendicular magnetic anisotropy in L a2CoMn O6 -ɛ thin films and its dependence on film thickness

    Science.gov (United States)

    Galceran, Regina; López-Mir, Laura; Bozzo, Bernat; Cisneros-Fernández, José; Santiso, José; Balcells, Lluís; Frontera, Carlos; Martínez, Benjamín

    2016-04-01

    Ferromagnetic insulating L a2CoMn O6 -ɛ (LCMO) epitaxial thin films grown on top of SrTi O3 (001) substrates present a strong magnetic anisotropy favoring the out-of-plane (OP) orientation of the magnetization with a large anisotropy field (˜70 kOe for film thickness of about 15 nm). Diminishing oxygen off-stoichiometry of the film enhances the anisotropy. We attribute this to the concomitant shrinkage of the OP cell parameter and to the increasing of the tensile strain of the films. Consistently, LCMO films grown on (LaAlO3)0.3(Sr2AlTaO6) 0.7 and LaAl O3 substrates (with a larger OP lattice parameter and compressive stress) display in-plane (IP) magnetic anisotropy. Thus, we link the strong magnetic anisotropy observed in LCMO to the film stress: tensile strain favors perpendicular anisotropy, and compressive stress favors IP anisotropy. We also report on the thickness dependence of the magnetic properties. Perpendicular anisotropy, saturation magnetization, and Curie temperature are maintained over a large range of film thickness.

  13. Excimer laser sintering of indium tin oxide nanoparticles for fabricating thin films of variable thickness on flexible substrates

    Energy Technology Data Exchange (ETDEWEB)

    Park, Taesoon; Kim, Dongsik, E-mail: dskim87@postech.ac.kr

    2015-03-02

    Technology to fabricate electrically-conducting, transparent thin-film patterns on flexible substrates has possible applications in flexible electronics. In this work, a pulsed-laser sintering process applicable to indium tin oxide (ITO) thin-film fabrication on a substrate without thermal damage to the substrate was developed. A nanosecond pulsed laser was used to minimize thermal penetration into the substrate and to control the thickness of the sintered layer. ITO nanoparticles (NPs) of ~ 20 nm diameter were used to lower the process temperature by exploiting their low melting point. ITO thin film patterns were fabricated by first spin coating the NPs onto a surface, then sintering them using a KrF excimer laser. The sintered films were characterized using field emission scanning electron microscopy. The electrical resistivity and transparency of the film were measured by varying the process parameters. A single laser pulse could generate the polycrystalline structure (average grain size ~ 200 nm), reducing the electrical resistivity of the film by a factor of ~ 1000. The sintering process led to a minimum resistivity of 1.1 × 10{sup −4} Ω·m without losing the transparency of the film. The thickness of the sintered layer could be varied up to 150 nm by adjusting the laser fluence. Because the estimated thermal penetration depth in the ITO film was less than 200 nm, no thermal damage was observed in the substrate. This work suggests that the proposed process, combined with various particle deposition methods, can be an effective tool to form thin-film ITO patterns on flexible substrates. - Highlights: • Excimer laser sintering can fabricate ITO thin films on flexible substrates. • The laser pulse can form a polycrystalline structure without thermal damage. • The laser sintering process can reduce the electrical resistivity substantially. • The thickness of the sintered layer can be varied effectively.

  14. An Ion-selective Electrode for Anion Perchlorate in Thick-film Technology

    Directory of Open Access Journals (Sweden)

    Luís Gil

    2006-04-01

    Full Text Available The ionophore 1,4,7,10,13-penta(n-octyl-1,4,7,10,13-pentaazacyclopentadecane(L1 was used for the development of miniaturised perchlorate-selective electrodes in thick-film technology. Different PVC membranes containing L1 and the plasticizers o-nitrophenyloctyl ether (NPOE, dibutyl phthalate (DBP, bis(2-ethylhexylsebacate (DOS and dibutylsebacate (DBS were prepared and placed on a graphite working electrode manufactured byusing thick film serigraphic technology. The perchlorate selective electrode containing DBSas plasticizer showed a potentiometric Nernstian response of -57 mV per decade in a rangeof perchlorate concentration from 1 x 10-4 to 1 x 10-1 M with a detection limit of 5 x 10-5 M.The ion selective electrodes containing DBP and NPOE as plasticizers exhibit a workingrange from 6.3 x 10-5 to 1 x 10-1 M and 7.4 x 10-5 to 1 x 10-1 M for perchlorate, respectively,with a detection limit of ca. 2.2 x 10-5 M. For all three electrodes a response time of ca. 5 s was found. The prepared electrodes do not show appreciable decay of the slope for at least 25 days. Potentiometric selectivity coefficients (log KpotClO4-,X- with respect to the primaryanion perchlorate were evaluated using the fixed interference method. These coefficients areof the order of 10-1.7 or smaller, indicating the relatively poor interference of the differentanions studied.

  15. Diametral tensile strength and film thickness of an experimental dental luting agent derived from castor oil

    Directory of Open Access Journals (Sweden)

    Juliana Cabrini Carmello

    2012-02-01

    Full Text Available The need to develop new dental luting agents in order to improve the success of treatments has greatly motivated research. OBJECTIVE: The aim of this study was to evaluate the diametral tensile strength (DTS and film thickness (FT of an experimental dental luting agent derived from castor oil (COP with or without addition of different quantities of filler (calcium carbonate - CaCO3. MATERIAL AND METHODS: Eighty specimens were manufactured (DTS N=40; FT N=40 and divided into 4 groups: Pure COP; COP 10%; COP 50% and zinc phosphate (control. The cements were mixed according to the manufacturers' recommendations and submitted to the tests. The DTS test was performed in the MTS 810 testing machine (10 KN, 0.5 mm/min. For FT test, the cements were sandwiched between two glass plates (2 cm² and a load of 15 kg was applied vertically on the top of the specimen for 10 min. The data were analyzed by means of one-way ANOVA and Tukey's test (α=0.05. RESULTS: The values of DTS (MPa were: Pure COP- 10.94±1.30; COP 10%- 30.06±0.64; COP 50%- 29.87±0.27; zinc phosphate- 4.88±0.96. The values of FT (µm were: Pure COP- 31.09±3.16; COP 10%- 17.05±4.83; COP 50%- 13.03±4.83; Zinc Phosphate- 20.00±0.12. One-way ANOVA showed statistically significant differences among the groups (DTS - p=1.01E-40; FT - p=2.4E-10. CONCLUSION: The experimental dental luting agent with 50% of filler showed the best diametral tensile strength and film thickness.

  16. Reliable enumeration of malaria parasites in thick blood films using digital image analysis

    Directory of Open Access Journals (Sweden)

    Frean John A

    2009-09-01

    Full Text Available Abstract Background Quantitation of malaria parasite density is an important component of laboratory diagnosis of malaria. Microscopy of Giemsa-stained thick blood films is the conventional method for parasite enumeration. Accurate and reproducible parasite counts are difficult to achieve, because of inherent technical limitations and human inconsistency. Inaccurate parasite density estimation may have adverse clinical and therapeutic implications for patients, and for endpoints of clinical trials of anti-malarial vaccines or drugs. Digital image analysis provides an opportunity to improve performance of parasite density quantitation. Methods Accurate manual parasite counts were done on 497 images of a range of thick blood films with varying densities of malaria parasites, to establish a uniformly reliable standard against which to assess the digital technique. By utilizing descriptive statistical parameters of parasite size frequency distributions, particle counting algorithms of the digital image analysis programme were semi-automatically adapted to variations in parasite size, shape and staining characteristics, to produce optimum signal/noise ratios. Results A reliable counting process was developed that requires no operator decisions that might bias the outcome. Digital counts were highly correlated with manual counts for medium to high parasite densities, and slightly less well correlated with conventional counts. At low densities (fewer than 6 parasites per analysed image signal/noise ratios were compromised and correlation between digital and manual counts was poor. Conventional counts were consistently lower than both digital and manual counts. Conclusion Using open-access software and avoiding custom programming or any special operator intervention, accurate digital counts were obtained, particularly at high parasite densities that are difficult to count conventionally. The technique is potentially useful for laboratories that

  17. Effect on thickness of Al layer in poly-crystalline Si thin films using aluminum(Al) induced crystallization method.

    Science.gov (United States)

    Jeong, Chaehwan; Na, Hyeon Sik; Lee, Suk Ho

    2011-02-01

    The polycrystalline silicon (poly-Si) thin films were prepared by aluminum induced crystallization. Aluminum (Al) and amorphous silicon (a-Si) layers were deposited using DC sputtering and plasma enhanced chemical vapor deposition method, respectively. For the whole process Al properties of bi-layers can be one of the important factors. In this paper we investigated the structural and electrical properties of poly-crystalline Si thin films with a variation of Al thickness through simple annealing process. All samples showed the polycrystalline phase corresponding to (111), (311) and (400) orientation. Process time, defined as the time required to reach 95% of crystalline fraction, was within 60 min and Al(200 nm)/a-Si(400 nm) structure of bi-layer showed the fast response for the poly-Si films. The conditions with a variation of Al thickness were executed in preparing the continuous poly-Si films for solar cell application.

  18. Single crystals of fullerene (C60 makes organic thick film solar cells and self supporting organic solar cells possible.

    Directory of Open Access Journals (Sweden)

    M. Umeno

    2008-06-01

    Full Text Available Single crystals of Fullerene (SC-C60 were synthesized by simple liquid/liquid interface precipitation method. Organic thick film solar cell (with an active layer thickness of approximately 20 microns thick is demonstrated by combining SC-C60 with poly(3-octylthiophene. Our preliminary results indicate that organic thick film solar cells are possible; which were considered to be impossible due to low mobility and small exciton diffusion lengths in most of the organic materials including small organic molecules and conjugated conducting polymers. Further, SC-C60 seems to be promising materials for organic photovoltaics. Self supporting organic solar cell is also demonstrated using SC-C60.

  19. Thickness limit in perpendicular magnetic anisotropy L1{sub 0} FePt(0 0 1) thin film

    Energy Technology Data Exchange (ETDEWEB)

    Sun, A.-C. [Department of Physics and Center for Nanostorage Research, National Taiwan University, Taipei 106, Taiwan (China); Hsu, J.-H. [Department of Physics and Center for Nanostorage Research, National Taiwan University, Taipei 106, Taiwan (China)]. E-mail: jhhsu@phys.ntu.edu.tw; Kuo, P.C. [Institute of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China); Huang, H.L. [Department of Physics and Center for Nanostorage Research, National Taiwan University, Taipei 106, Taiwan (China); Lu, H.C. [Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan (China); Wang, S.F. [Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 106, Taiwan (China)

    2007-03-15

    Perpendicular magnetic anisotropy L1{sub 0} FePt (0 0 1) films with various thicknesses were prepared onto Pt(0 0 1)/Cr(0 0 2) bilayers. When the thickness of FePt layer was smaller than 30 nm, a single orientation of L1{sub 0} FePt(0 0 1) texture was present, confirming that the easy axis was perpendicular to the film plane. But as the thickness increased over 30 nm along with the L1{sub 0} FePt(0 0 1) orientation, the peak corresponding to L1{sub 0} FePt (1 1 1) orientation was also observed, which indicated the quality degradation of perpendicular magnetic anisotropy. From our study, the critical thickness for growing perfect L1{sub 0} FePt(0 0 1) single orientation is around 30 nm.

  20. Effect of strain on the critical current density of Bi-2223 thick films sandwiched between Ag sheets

    Energy Technology Data Exchange (ETDEWEB)

    Jia, J.H. (Academia Sinica, Hefei (China). Inst. of Solid State Physics); Kong, Q.P. (Academia Sinica, Hefei (China). Inst. of Solid State Physics); Wang, S.X. (Academia Sinica, Hefei, Anhui (China). Inst. of Plasma Physics); Han, H.M. (Academia Sinica, Hefei, Anhui (China). Inst. of Plasma Physics)

    1994-08-16

    The tapes of (Bi, Pb)[sub 2]Sr[sub 2]Ca[sub 2]Cu[sub 3]O[sub x] (Bi-2223) thick film sandwiched between Ag sheets are known to have very high J[sub c]. In this note, the stress-strain behaviour and the strain dependence of critical current density of the Ag/Bi-2223/Ag tapes are investigated. The microstructure of superconducting thick films subjected to various amounts of deformation was examined with a scanning electron microscope (SEM). (orig.)

  1. Energy harvesting using piezoelectric thick films fabricated by a sol-gel process

    Energy Technology Data Exchange (ETDEWEB)

    Shih, J.L. [McGill Univ., Montreal, PQ (Canada). Dept. of Electrical and Computer Engineering; Kobayashi, M.; Moisan, J.F.; Jen, C.K. [National Research Council of Canada, Boucherville, PQ (Canada). Industrial Materials Inst.

    2008-07-01

    Energy harvesting has been touted as a promising technology to power wireless devices. One of the common energies to be harvested is induced by mechanical vibrations. Piezoelectric materials are often used to get such energy. This study focused on a vibration-based energy harvesting device. Very flexible vibrators using lead-zirconate-titanate (PZT) ceramics were needed. Therefore, a sol-gel spray technology was used to fabricate PZT thick film directly onto metal membranes to serve as mechanical vibrators. The sol-gel process is an economical approach with excellent mass production appeal for both unimorph and bimorph sensors. For this study, the density of the PZT film was less than 85 per cent of the bulk PZT. Using a 20 mm diameter unimorph, the voltage generated from a 5 mm deflection displacement was 13.6 volts peak-to-peak at 10 Hz. With a load resistance of 150 K ohms, the measured average power generated by this sensor was estimated to be 41 {mu}W. A vibration test that lasted for 60 days with a frequency of 10 Hz and at a displacement of approximately 1 mm showed that the sensor is both durable and rugged. 14 refs., 7 figs.

  2. Microstructural and magnetic properties of thick ({>=}10 {mu}m) magnetron sputtered barium ferrite films

    Energy Technology Data Exchange (ETDEWEB)

    Dehlinger, A.S. [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Le Berre, M., E-mail: martine.leberre@insa-lyon.f [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Canut, B. [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Chatelon, J.P. [DIOM, Universite Jean Monnet, Saint Etienne F-42023 (France); Albertini, D. [Universite de Lyon, Institut des Nanotechnologies de Lyon INL-UMR 5270, CNRS, INSA Lyon, Villeurbanne F-69621 (France); Perrot, S. [RADIALL, Voiron F-38500 (France); Givord, D. [Institut Louis Neel, UPR 5051, Grenoble F-38042 (France); Rousseau, J.J. [DIOM, Universite Jean Monnet, Saint Etienne F-42023 (France)

    2010-11-15

    This work focuses on the properties of 10-15 {mu}m thick barium M-type hexaferrite (BaFe{sub 12}O{sub 19} or BaM) films deposited by non-reactive RF magnetron sputtering on alumina substrates. High deposition rates were achieved through deposition at room temperature and operation at an RF power of 100 W. By varying sputtering gas pressure, the dc magnetic properties were correlated with structural, morphological and compositional properties obtained by X-ray diffraction (XRD), atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS), respectively. A deposition pressure of P=3 Pa enables one to reach the best compromise between high deposition rate (0.75 {mu}m/h) and adequate crystallographic, stoichiometric and magnetostatic properties. Finally the gyromagnetic properties at high frequency were assessed through the characterization of coplanar isolator up to 60 GHz. As such, hexaferrite films prepared using this technique may offer opportunities for the next generation of self-biased planar microwave devices.

  3. Thickness-Dependent Properties of YBCO Films Grown on GZO/CLO-Buffered NiW Substrates

    Science.gov (United States)

    Malmivirta, M.; Huhtinen, H.; Zhao, Y.; Grivel, J.-C.; Paturi, P.

    2017-01-01

    To study the role of novel Gd_2Zr_2O_7/Ce_{0.9}La_{0.1}O_2 buffer layer structure on a biaxially textured NiW substrate, a set of YBa_2Cu_3O_{7-δ } (YBCO) films with different thicknesses were prepared by pulsed laser deposition (PLD). Interface imperfections as well as thickness-dependent structural properties were observed in the YBCO thin films. The structure is also reflected into the improved superconducting properties with the highest critical current densities in films with intermediate thicknesses. Therefore, it can be concluded that the existing buffer layers need more optimization before they can be successfully used for films with various thicknesses. This issue is linked to the extremely susceptible growth method of PLD when compared to the commonly used chemical deposition methods. Nevertheless, PLD-grown films can give a hint on what to concentrate to be able to further improve the buffer layer structures for future coated conductor technologies.

  4. Thickness dependent activity of nanostructured TiO 2/α-Fe 2O 3 photocatalyst thin films

    Science.gov (United States)

    Akhavan, O.

    2010-12-01

    The effect of thickness of TiO 2 coating on synergistic photocatalytic activity of TiO 2 (anatase)/α-Fe 2O 3/glass thin films as photocatalysts for degradation of Escherichia coli bacteria in a low-concentration H 2O 2 solution and under visible light irradiation was investigated. Nanograined α-Fe 2O 3 films with optical band-gap of 2.06 eV were fabricated by post-annealing of thermal evaporated iron oxide thin films at 400 °C in air. Increase in thickness of the Fe 2O 3 thin film (here, up to 200 nm) resulted in a slight reduction of the optical band-gap energy and an increase in the photoinactivation of the bacteria. Sol-gel TiO 2 coatings were deposited on the α-Fe 2O 3 (200 nm)/glass films, and then, they were annealed at 400 °C in air for crystallization of the TiO 2 and formation of TiO 2/Fe 2O 3 heterojunction. For the TiO 2 coatings with thicknesses ≤50 nm, the antibacterial activity of the TiO 2/α-Fe 2O 3 (200 nm) was found to be better than the activity of the bare α-Fe 2O 3 film. The optimum thickness of the TiO 2 coating was found to be 10 nm, resulting in about 70 and 250% improvement in visible light photo-induced antibacterial activity of the TiO 2/α-Fe 2O 3 thin film as compared to the corresponding activity of the bare α-Fe 2O 3 and TiO 2 thin films, respectively. The improvement in the photoinactivation of bacteria on surface of TiO 2/α-Fe 2O 3 was assigned to formation of Ti-O-Fe bond at the interface.

  5. Investigation of the fabrication parameters of thick film metal oxide-polymer pH electrodes

    CERN Document Server

    Gac, A

    2002-01-01

    This thesis describes a study into the development of an optimum material and fabrication process for the production of thick film pH electrodes. These devices consist of low cost, miniature and rugged pH sensors formed by screen printing a metal oxide bearing paste onto a high temperature (approx 850 deg C) fired metal back contact supported on a standard alumina substrate. The pH sensitive metal oxide layer must be fabricated at relatively low temperatures (<300 deg C) in order to maintain the pH sensitivity of the layer and hence requires the use of a suitably stable low temperature curing binder. Bespoke fabricated inks are derived from a Taguchi style factorial experimental plans in which, different binder types, curing temperatures, hydration level and percentage mixtures of different metal oxides and layer thicknesses were investigated. The pH responses of 18 printed electrodes per batch were assessed in buffer solutions with respect to a commercial reference electrode forming a complete potentiomet...

  6. Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3 films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Shuolong [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Sobota, Jonathan A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Leuenberger, Dominik [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Kemper, Alexander F. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Lee, James J. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Schmitt, Felix T. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Li, Wei [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Moore, Rob G. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Kirchmann, Patrick S. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Shen, Zhi -Xun [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)

    2015-06-01

    Ultrathin FeSe films grown on SrTiO3 substrates are a recent milestone in atomic material engineering due to their important role in understanding unconventional superconductivity in Fe-based materials. By using femtosecond time- and angle-resolved photoelectron spectroscopy, we study phonon frequencies in ultrathin FeSe/SrTiO3 films grown by molecular beam epitaxy. After optical excitation, we observe periodic modulations of the photoelectron spectrum as a function of pump–probe delay for 1-unit-cell, 3-unit-cell, and 60-unit-cell thick FeSe films. The frequencies of the coherent intensity oscillations increase from 5.00 ± 0.02 to 5.25 ± 0.02 THz with increasing film thickness. By comparing with previous works, we attribute this mode to the Se A1g phonon. The dominant mechanism for the phonon softening in 1-unit-cell thick FeSe films is a substrate-induced lattice strain. Results demonstrate an abrupt phonon renormalization due to a lattice mismatch between the ultrathin film and the substrate.

  7. MgB2 thick films deposited on stainless steel substrate with Tc higher than 39K

    Institute of Scientific and Technical Information of China (English)

    LI Fen; GUO Tao; ZHANG Kai-cheng; CHEN Chin-ping; FENG Qing-rong

    2006-01-01

    Thick MgB2 (magnesium diborate) films,~10 μm,with Tc (onset)=39.4 K and Tc (zero)=39.2 K have been successfully grown on a stainless steel substrate using a technique called hybrid physical-chemical deposition (HPCVD).The deposition rate is high,~6.7 nm/s.The X-ray diffraction (XRD) indicates that it is highly (101) and c-axis oriented.The scanning electron microscope (SEM) images demonstrate that the film grown is in"island-mode".The uniform superconducting phase in the film is shown by the M-T measurement.

  8. Temperature and layer thickness dependent in situ investigations on epindolidione organic thin-film transistors.

    Science.gov (United States)

    Lassnig, R; Striedinger, B; Jones, A O F; Scherwitzl, B; Fian, A; Głowacl, E D; Stadlober, B; Winkler, A

    2016-08-01

    We report on in situ performance evaluations as a function of layer thickness and substrate temperature for bottom-gate, bottom-gold contact epindolidione organic thin-film transistors on various gate dielectrics. Experiments were carried out under ultra-high vacuum conditions, enabling quasi-simultaneous electrical and surface analysis. Auger electron spectroscopy and thermal desorption spectroscopy (TDS) were applied to characterize the quality of the substrate surface and the thermal stability of the organic films. Ex situ atomic force microscopy (AFM) was used to gain additional information on the layer formation and surface morphology of the hydrogen-bonded organic pigment. The examined gate dielectrics included SiO2, in its untreated and sputtered forms, as well as the spin-coated organic capping layers poly(vinyl-cinnamate) (PVCi) and poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE, from the class of polynorbornenes). TDS and AFM revealed Volmer-Weber island growth dominated film formation with no evidence of a subjacent wetting layer. This growth mode is responsible for the comparably high coverage required for transistor behavior at 90-95% of a monolayer composed of standing molecules. Surface sputtering and an increased sample temperature during epindolidione deposition augmented the surface diffusion of adsorbing molecules and therefore led to a lower number of better-ordered islands. Consequently, while the onset of charge transport was delayed, higher saturation mobility was obtained. The highest, bottom-contact configuration, mobilities of approximately 2.5 × 10(-3)cm(2)/Vs were found for high coverages (50 nm) on sputtered samples. The coverage dependence of the mobility showed very different characteristics for the different gate dielectrics, while the change of the threshold voltage with coverage was approximately the same for all systems. An apparent decrease of the mobility with increasing coverage on the

  9. Monolithic Pellets, Composites and Thick Films of Hydroxyapatite: Correlation of Mechanical Properties with Microstructure.

    Science.gov (United States)

    Wang, Pauchiu Either

    Hydroxyapatite Ca_{10}(PO _4)_6(OH)_2 (abbreviated as HA) has great biocompatibility. Poor mechanical properties of HA implants and decomposition of HA during processing are the major obstacles for widespread uses of HA. In the present thesis we have attempted to understand the sintering behavior of monolithic HA and metal-reinforced HA-matrix composites, and the mechanism of formation of HA coating in the solutions at the normal temperature. The powders of two calcium phosphates, namely hydroxyapatite and dicalcium phosphate (DCP: chemical formula Ca_2P_2O_7), were sintered at various temperatures and in various environments. The density, flexural strength and knoop hardness of both phosphates sintered in air for 4 h initially increased with the sintering temperature, reaching maxima at around 1000-1150 ^circC, and then decreased due to decomposition. To reduce dehydroxylation, HA powder was sintered in moisture at various temperatures up to 1350^circ C and X-ray diffraction study did not indicate any decomposition at the highest sintering temperature. It is seen that dehydroxylation did not hinder sintering, but decomposition obstructed sintering of both HA and DCP. Ductile-phase reinforcement of hydroxyapatite was achieved by addition of silver particulates (5-30 vol.%) in HA powder compacts. A composite made by sintering 10 vol.% Ag and balance HA at 1200^circ C for 1 h in air had flexural strength of 75 +/- 7 MPa, which was almost double that of pure HA sintered under an identical condition. Silver in the composite melted during sintering, but due to poor wetting, did not spread in between HA particles. The increase in the flexural strength of the composites was thought to be due to crack-bridging and crack-arrest by silver inclusions. Thick films (several μm) of hydroxyapatite were deposited on silicon single crystal placed in close proximity to a plate of apatite- and wollastonite -containing glass and dipped into a simulated body fluid (SBF) at 36^circ

  10. Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

    Science.gov (United States)

    Ahmadipour, Mohsen; Ain, Mohd Fadzil; Ahmad, Zainal Arifin

    2016-11-01

    In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV-vis spectrophotometer and current-voltage (I-V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30-90% relative humidity (RH).

  11. Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ahmadipour, Mohsen [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ain, Mohd Fadzil [School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia); Ahmad, Zainal Arifin, E-mail: srzainal@usm.my [Structural Materials Niche Area, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang (Malaysia)

    2016-11-01

    Highlights: • CCTO thin film was synthesized by RF magnetron sputtering successfully. • Increase in thickness lead to increase in grain size and decrease in band gap. • Short response times and recovery times of lead CCTO humidity sensor. • Sensor could detect humidity range (30–90%). - Abstract: In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV–vis spectrophotometer and current-voltage (I–V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30–90% relative humidity (RH).

  12. Characterization of Films with Thickness Less than 10 nm by Sensitivity-Enhanced Atomic Force Acoustic Microscopy

    Directory of Open Access Journals (Sweden)

    Muraoka Mikio

    2011-01-01

    Full Text Available Abstract We present a method for characterizing ultrathin films using sensitivity-enhanced atomic force acoustic microscopy, where a concentrated-mass cantilever having a flat tip was used as a sensitive oscillator. Evaluation was aimed at 6-nm-thick and 10-nm-thick diamond-like carbon (DLC films deposited, using different methods, on a hard disk for the effective Young's modulus defined as E/(1 - ν2, where E is the Young's modulus, and ν is the Poisson's ratio. The resonant frequency of the cantilever was affected not only by the film's elasticity but also by the substrate even at an indentation depth of about 0.6 nm. The substrate effect was removed by employing a theoretical formula on the indentation of a layered half-space, together with a hard disk without DLC coating. The moduli of the 6-nm-thick and 10-nm-thick DLC films were 392 and 345 GPa, respectively. The error analysis showed the standard deviation less than 5% in the moduli.

  13. Thickness dependence of surface energy and contact angle of water droplets on ultrathin MoS2 films.

    Science.gov (United States)

    Guo, Yanhua; Wang, Zhengfei; Zhang, Lizhi; Shen, Xiaodong; Liu, Feng

    2016-06-01

    We have performed a systematic density functional study of surface energy of MoS2 films as a function of thickness from one to twelve layers with the consideration of van der Waals (vdW) interactions using the vdW-DF and DFT-D2 methods. Both vdW schemes show that the surface energy will increase with the increase of the number of atomic layers and converge to a constant value at about six layers. Based on the calculated surface energies, we further analyze the surface contact angle of water droplets on the MoS2 film surface using Young's equation as a function of thickness in comparison with experiments, from which the water-MoS2 interfacial energy is derived to be independent of MoS2 thickness. Our calculations indicate that the vdW interactions between the MoS2 layers play an important role in determining surface energy, and results in the thickness dependence of the contact angle of water droplets on the MoS2 film surface. Our results explain well the recent wetting experiment [Nano Lett., 2014, 14(8), 4314], and will be useful for future studies of physical and chemical properties of ultrathin MoS2 films.

  14. Elastohydrodynamic study of blends of bio-based esters with polyalphaolefin in the low film thickness regime

    Science.gov (United States)

    The film thickness in elastohydrodynamic conditions for soybean oil (SBO), oleic estolide ester (Est) and their binary blends with polyalphaolefins (PAO2 or PAO40) were studied at 30 and 100°C. Changes with time, for up to 200 min, were monitored. SBO and its blends with the lower viscosity PAO2 sho...

  15. The effect of the viscosity-pressure behaviour of lubricants on the film thickness in elastohydrodynamically lubricated line contacts

    NARCIS (Netherlands)

    Schipper, D.J.; Napel, ten W.E; Dowson, D.

    1998-01-01

    In this paper the influence of the viscosity-pressure relationship on the film thickness for the line contact situation is presented. The viscosity-pressure behaviour of many lubricants differs significantly from the behaviour according to Barus which is commonly used in EHL. This topic is of intere

  16. Reaction Time and Film Thickness Effects on Phase Formation and Optical Properties of Solution Processed Cu2ZnSnS4 Thin Films

    Science.gov (United States)

    Safdar, Amna; Islam, Mohammad; Akram, Muhammad Aftab; Mujahid, Mohammad; Khalid, Yasir; Shah, S. Ismat

    2016-02-01

    Copper-zinc-tin-sulfide (Cu2ZnSnS4 or CZTS) is a promising p-type semiconductor material as absorber layer in thin film solar cells. The sulfides of copper and tin as well as zinc and sulfur powders were dissolved in hydrazine. The effect of chemical reaction between precursor species, at room temperature, was assessed for 6 to 22 h. For 22 h reaction time, the effect of spin coated film thickness on the resulting composition, after annealing under N2 flow at 500 °C for 1 h, was investigated. The morphology, composition, and optical properties of the annealed films were determined by means of x-ray diffraction, scanning electron microscope, and spectrophotometer studies. It was found that, for less than optimal reaction time of 22 h or film thickness below 1.2 µm, other ternary phases namely Cu4SnS4, Cu5Sn2S7, and ZnS co-exist in different proportions besides CZTS. Formation of phase-pure CZTS films also exhibited a tendency to minimize film cracking during annealing. Depending on the processing conditions, the band gap ( E g) values were determined to be in the range of 1.55 to 1.97 eV. For phase-pure annealed CZTS film, an increase in the E g value may be attributed to quantum confinement effect due to small crystallite size.

  17. Fabrication and Optimization of Brush-Printed n-type Bi2Te3 Thick Films for Thermoelectric Cooling Devices

    Science.gov (United States)

    Liu, Xing; Zhao, Wen-yu; Zhou, Hong-yu; Mu, Xin; He, Dan-qi; Zhu, Wan-ting; Wei, Ping; Wu, Han; Zhang, Qing-jie

    2016-03-01

    A simple, efficient and rapid brush-printing method has been developed for preparation of n-type Bi2Te2.7Se0.3 films approximately 100-150 μm thick. X-ray diffraction, scanning electron microscopy, electron probe microanalysis, and four-point probe measurements were used to characterize the crystal structure, composition, microstructure, and electrical properties of the films. The results showed that all the n-type Bi2Te2.7Se0.3 thick films were composed of single-phase Bi2Te2.7Se0.3; the grains in the films were randomly distributed in the low-temperature-annealed samples and predominantly oriented along the (00 l) plane in samples annealed at temperatures >673 K. σ and the absolute value of α first increased substantially with increasing the annealing temperature in the range 573-673 K then decreased when the annealing temperature was increased further. The dependence of σ and α on annealing temperature may be reasonably explained on the basis of the change in the microstructure induced by annealing. The performance of a prototype cooling device containing n-type Bi2Te2.7Se0.3 thick films was evaluated for temperature differences produced by use of different DC currents.

  18. Effect of thickness on the microstructure of GaN films on Al203 (0001) by laser molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Liu Ying-Ying; Zhu Jun; Luo Wen-Bo; Hao Lan-Zhong; Zhang Ying; Li Yan-Rong

    2011-01-01

    Heteroepitaxia1l GaN films are grown on sapphire (0001) substrates using laser molecular beam epitaxy.The growth processes are in-situ monitored by reflection high energy electron diffraction.It is revealed that the growth mode of GaN transformed from three-dimensional (3D) island mode to two-dimensional (2D) layer-by-layer mode with the increase of thickness.This paper investigates the interfacial strain relaxation of GaN films by analysing their diffraction patterns.Calculation shows that the strain is completely relaxed when the thickness reaches 15 nm.The surface morphology evolution indicates that island merging and reduction of the island-edge barrier provide an effective way to make GaN films follow a 2D layer-by-layer growth mode.The 110-nm GaN films with a 2D growth mode have smooth regular hexagonal shapes.The X-ray diffraction indicates that thickness has a significant effect on the crystallized quality of GaN thin films.

  19. The effect of annealing temperature and film thickness on the phase of pentacene on the p+-Si substrate

    Institute of Scientific and Technical Information of China (English)

    Yuan Guang-Cai; Xu Zheng; Zhao Su-Ling; Zhang Fu-Jun; Huang Jin-Zhao; Huang Jin-Ying; Tian Xue-Yan; Xu Xu-Rong

    2008-01-01

    This paper investigates the morphology and crystallization properties of the two crystalline phases of pentacene grown by thermal evaporation on p+-Si substrates at room temperature by the methods of atomic force microscopy and x-ray diffraction.This kind of substrate induces a thin film phase and a triclinic phase which are formed directly onto p+-Si substrates and constitute a layer consisting of faceted grains with a step height between terraces of 15.8 (A)(1 A=0.1 nm)and 14.9 A,respectively.Above the critical thickness of the thin film phase,lamellax structures are found with an increasing fraction with the increase of the film thickness.When the film thickness is fixed,the fraction of lamellax structures increases with the increase of annealing temperature.These lamellax structures axe identified as the second phase with a interplanar distance of 14.9 (A) corresponding to the pentacene triclinic phase.Furthermore,the thin film phase consisting of several micrometre sized uniformly oriented grains at an annealing temperature of less than 80℃ and a deposition rate of 0.6 (A)/s is observed.

  20. Zirconium titanate thin film prepared by surface sol-gel process and effects of thickness on dielectric property

    CERN Document Server

    Kim, C H

    2002-01-01

    Single phase of multicomponent oxide ZrTiO sub 4 film could be prepared through surface sol-gel route simply by coating the mixture of 100mM zirconium butoxide and titanium butoxide on Pt/Ti/SiO sub 2 /Si(100) substrate, following pyrolysis at 450 .deg. C, and annealing it at 770 .deg. C. The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V). The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, t sub i , was dependent on the frequency. It reached a saturated t sub i value, 6.9 A, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO sub 4 pellet-shaped material was 3...

  1. Effect of the permeability of the porous shell on the vapor film thickness during boiling of superfluid helium in microgravity

    Science.gov (United States)

    Korolev, P. V.; Kryukov, A. P.; Puzina, Yu. Yu.

    2015-07-01

    This paper presents a theoretically study of the boiling of superfluid helium on a cylindrical heater placed in a coaxial porous shell in microgravity. Steady-state transfer processes at the interface are studied using molecular-kinetic methods. The Boltzmann transport equation is solved by the moment method based on the four-moment approximation in the form of a two-sided Maxwellian. The obtained solution is used to calculate the heat flux density in film boiling on a cylindrical heating surface in the case where the film thickness is comparable to the diameter of the heater. The motion of the normal component of the superfluid liquid in pores is described by equations that take into account heat and mass transfer in superfluid helium. The relation between the vapor film thickness and the structural characteristics and geometrical dimensions of the porous shell is obtained. Analysis of the results of the calculations is given.

  2. Anomalous thickness-dependent strain states and strain-tunable magnetization in Zn-doped ferrite epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Y. J.; Bao, J.; Gao, C., E-mail: zlluo@ustc.edu.cn, E-mail: cgao@ustc.edu.cn [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026 (China); CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026 (China); Yang, M. M.; Luo, Z. L., E-mail: zlluo@ustc.edu.cn, E-mail: cgao@ustc.edu.cn; Hu, C. S.; Chen, X. C.; Pan, G. Q. [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026 (China); Huang, H. L. [CAS Key Laboratory of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026 (China); Zhang, S.; Wang, J. W.; Li, P. S.; Liu, Y.; Zhao, Y. G. [Department of Physics and State Key Laboratory of New Ceramics, Fine Processing, Tsinghua University, Beijing 100084 (China); Jiang, T.; Liu, Y. K.; Li, X. G. [Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science, Technology of China, Hefei, Anhui 230026 (China)

    2014-05-07

    A series of Zn{sub x}Fe{sub 3−x}O{sub 4} (ZFO, x = 0.4) thin films were epitaxially deposited on single-crystal (001)-SrTiO{sub 3} (STO) substrates by radio frequency magnetron sputtering. The anomalous thickness-dependent strain states of ZFO films were found, i.e., a tensile in-plane strain exists in the thinner ZFO film and which monotonously turns into compressive in the thicker films. Considering the lattice constant of bulk ZFO is bigger than that of STO, this strain state cannot be explained in the conventional framework of lattice-mismatch-induced strain in the hetero-epitaxial system. This unusual phenomenon is proposed to be closely related to the Volmer-Weber film growth mode in the thinner films and incorporation of the interstitial atoms into the island's boundaries during subsequent epitaxial growth of the thicker films. The ZFO/STO epitaxial film is found in the nature of magnetic semiconductor by transport measurements. The in-plane magnetization of the ZFO/STO films is found to increase as the in-plane compressive strain develops, which is further proved in the (001)-ZFO/PMN-PT film where the film strain state can be in situ controlled with applied electric field. This compressive-strain-enhanced magnetization can be attributed to the strain-mediated electric-field-induced in-plane magnetic anisotropy field enhancement. The above results indicate that strain engineering on magnetic oxide semiconductor ZFO films is promising for novel oxide-electronic devices.

  3. Homogeneity analysis of high yield manufacturing process of mems-based pzt thick film vibrational energy harvesters

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Pedersen, C.M.

    2011-01-01

    This work presents a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibrational energy harvesters aimed towards vibration sources with peak frequencies in the range of a few hundred Hz. By combining KOH etching with mechanical front side protection, SOI wafer...... to accurately define the thickness of the silicon part of the harvester and a silicon compatible PZT thick film screen-printing technique, we are able to fabricate energy harvesters on wafer scale with a yield higher than 90%. The characterization of the fabricated harvesters is focused towards the full wafer....../mass-production aspect; hence the analysis of uniformity in harvested power and resonant frequency....

  4. Nanostructured SnO2 thick films for gas sensor application: analysis of structural and electronic properties

    Science.gov (United States)

    Miskovic, Goran; Aleksic, Obrad S.; Nikolic, Maria V.; Nicolics, Johann; Radosavljevic, Goran; Vasiljevic, Zorka Z.; Lukovic, Miloljub D.; Smetana, Walter

    2016-03-01

    This research is focused on structural and electrical characterisation of tin oxide (SnO2) applied as a thick film and investigation of its properties as gas sensitive material. Micron sized SnO2 powder was milled in an agate mill for six hours to fabricate SnO2 nanopowder, which was afterwards sieved by 325 mesh sieve and characterized by XRD and SEM. This powder was used as functional part in the production of thick film tin oxide paste containing a resin vehicle with 4 wt. % nanosize glass frits acting as permanent binder. The glass frits where additionally milled for twelve hours in the agate mills to nanosized powder and sieved by a 325 mesh sieve as well. The achieved thick film paste was screen printed on alumina and fired at 850oC peak temperature for 10 minutes in air. After the sintering process, thick film samples where characterized by X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). The reflectivity was measured on the same samples by UV-VIS spectrophotometer: the band gap was determined from the slope of reflectance. After that a matrix of different interdigitated electrode structure of PdAg paste was printed and sintered using the mentioned sintering conditions. The tin oxide thick film was printed over the interdigitated electrodes as a top layer and sintered again under the same conditions. The total electrical resistance was measured as a function of the electrode spacing and temperature. A negative temperature coefficient (NTC) was identified and measured in the range from room temperature (27°C) to 180°C in a climate chamber. Finally the samples were placed into a gas reactor with NOx and CO gas and the resistance was measured in the same temperature range (27°C-200°C).

  5. High quality MgB{sub 2} thick films and large-area films fabricated by hybrid physical-chemical vapor deposition with a pocket heater

    Energy Technology Data Exchange (ETDEWEB)

    Wang, S F; Chen, Ke; Li, Qi; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lee, C-H; Soukiassian, A; DeFrain, R; Redwing, J M; Schlom, D G [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States); Lamborn, D R [Department of Chemical Engineering, Pennsylvania State University, University Park, PA 16802 (United States)], E-mail: suw16@psu.edu

    2008-08-15

    A hybrid physical-chemical vapor deposition process using a pocket heater was developed for the growth of high quality epitaxial large-area MgB{sub 2} thin films and c-axis textured MgB{sub 2} thick films. This technique is able to independently control the substrate and Mg source temperatures and maintain sufficient Mg overpressure to ensure phase stability. The two-inch large-area MgB{sub 2} thin films showed uniform superconducting properties with the superconducting transition temperature T{sub c} of about 40 K, residual resistivity ratio (RRR) of about 10, and critical current density J{sub c} of about 10{sup 7} A cm{sup -2} (0 T, 5 K). The thick films ({approx}10 {mu}m) on sapphire substrates showed a maximum T{sub c} of 40 K and RRR of 15, and a J{sub c} of 1.6 x 10{sup 6} A cm{sup -2} at low applied magnetic fields even at 20 K. High quality thick films also have been obtained on metal substrates.

  6. Obtenção de filmes espessos de seleneto de cobre sobre carbono vítreo, ouro, titânio e cobre Obtaining copper selenide thick films on vitreous carbon, gold, titanium and copper

    OpenAIRE

    Adriano César Rabelo; Tatiane Moraes Arantes; Otávio Luiz Bottecchia

    2007-01-01

    Copper selenide (berzelianite) films were prepared on the title substrates using the chemical bath deposition technique (CBD). Film composition was determined by energy dispersion of x-rays. The kinetics of film growth is parabolic and film adherence limits the film thickness. On titanium, copper selenide forms islands that do not completely cover the surface, unless the substrate is prepared with a tin oxide layer; film composition also depends on the titanium oxide layer. On vitreous carbon...

  7. Achieving an H-induced transparent state in 200 nm thick Mg-Ti film by amorphization

    Science.gov (United States)

    Fang, Fang; Zhao, Qiyang; Wu, Wangyang; Qiu, Jiameng; Song, Yun; Cui, Xiaoli; Sun, Dalin; Ouyang, Liuzhang; Zhu, Min

    2014-01-01

    Crystalline Mg-Ti films with a thickness of more than 50 nm are only switched to a highly absorbing state and cannot be further changed to the transparent state after hydrogen loading at room temperature. To solve this problem, 200 nm thick amorphous MgTix (x = 0.11-0.29) films were prepared and their switchable mirror properties upon hydrogen loading and unloading were investigated. The results show that amorphous MgTix films can be reversibly switched between mirror and transparent states without an absorbing state due to the significant acceleration of hydrogen diffusion by amorphization. Moreover, the switching time of amorphous MgTix films are dramatically shortened with increasing Ti content. Using quartz crystal microbalance method plus transmission spectrum, it is experimentally proved that Ti addition shows little influence on hydrogen diffusion but a strong catalytic effect on MgH2 formation and decomposition. Therefore, the quick formation of a blocking MgH2 layer due to the combined effect of slower hydrogen diffusion in crystalline films and rapid MgH2 formation under Ti catalysis is considered as the reason why the crystalline Mg-Ti films cannot be changed to transparent state after hydrogen loading.

  8. Photocatalytic activities of wet oxidation synthesized ZnO and ZnO-TiO2 thick porous films

    Science.gov (United States)

    Chen, Ruiqun; Han, Jie; Yan, Xiaodong; Zou, Chongwen; Bian, Jiming; Alyamani, Ahmed; Gao, Wei

    2011-05-01

    Highly porous zinc oxide (ZnO) film was produced by using reactive magnetron sputtering zinc target followed by wet oxidation. Titanium dioxide (TiO2) was mixed to the porous films by using either TiO2 target magnetron sputter deposition or sol-spin method. The film thickness could reach 50 μm with uniform porosity. On the sputtering prepared ZnO-TiO2 film surface, fine nanorods with small anatase TiO2 nano-clusters on the tips were observed by SEM and TEM, and the titanium (Ti) composition was determined by XPS as 0.37%. The sol-spin treatment could increase the Ti composition to 4.9%, with reduced pore size compared to the untreated ZnO porous film. Photoluminescence measurements showed that the Ti containing porous film has strong ultraviolet-visible light emission. In the photo-catalysis testing, ZnO and ZnO-TiO2 have similar photo-catalysis activity under 365 nm UV irradiation, but under visible light, the photocatalysis activities of ZnO-TiO2 films were twice higher than that of ZnO porous film, implying promising applications of this porous oxide composite for industrial and dairy farm wastewater treatment.

  9. Ultraviolet and infrared studies of the single-walled and multi-walled carbon nanotube films with different thickness

    Energy Technology Data Exchange (ETDEWEB)

    Abouelsayed, A., E-mail: a_sobhi77@yahoo.com [Spectroscopy Department, Physics Division, National Research Centre, 33 El Bohouth st. (Former El Tahrir st.), Dokki, Giza P.O. 12622 (Egypt); Eisa, Wael H. [Spectroscopy Department, Physics Division, National Research Centre, 33 El Bohouth st. (Former El Tahrir st.), Dokki, Giza P.O. 12622 (Egypt); Dawy, M. [Physical Chemistry Department, Inorganic Chemical Industries and Mineral Resources Division National Research Centre, 33 El Bohouth st. (former El Tahrir st.), Dokki, Giza P.O. 12622 (Egypt); Shabaka, A. [Spectroscopy Department, Physics Division, National Research Centre, 33 El Bohouth st. (Former El Tahrir st.), Dokki, Giza P.O. 12622 (Egypt)

    2016-02-15

    Ultraviolet and infrared transmission measurements on an unoriented single-wall (SWCNTs) and multi-wall (MWCNTs) carbon nanotubes films were performed over a frequency range 190–2500 nm for the four different films. A clear change in the fine structure of the infrared spectrum for different films. The higher-energy optical absorption bands, which correspond to transitions across the Van Hove singularities, are not observed in the measured frequency range in the case of MWCNTs films. The broad excitation in the low-energy range below 0.025 eV (Drude peak (E{sub M0})) are attributed to the contributions from metallic carriers localized in a finite length. This Drude peak (E{sub M0}) at low-energies is decreased in in case of MWCNTs, which suggests a progressive transition of metallic tubes to insulating state. The unoriented MWCNTs films have an average thickness of about 200–400 nm. The scanning electron microscope pictures of the SWCNTs and the MWCNTs films illustrate the morphological differences between the four studied samples. The volume fraction of the carbon nanotubes in all films appears to be the same, although there is a difference for particles other than nanotubes in the films.

  10. Thickness effect on properties of titanium film deposited by d.c. magnetron sputtering and electron beam evaporation techniques

    Indian Academy of Sciences (India)

    Nishat Arshi; Junqing Lu; Chan Gyu Lee; Jae Hong Yoon; Bon Heun Koo; Faheem Ahmed

    2013-10-01

    This paper reports effect of thickness on the properties of titanium (Ti) film deposited on Si/SiO2 (100) substrate using two different methods: d.c. magnetron sputtering and electron beam (e-beam) evaporation technique. The structural and morphological characterization of Ti film were performed using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). XRD pattern revealed that the films deposited using d.c. magnetron sputtering have HCP symmetry with preferred orientation along (002) plane, while those deposited with e-beam evaporation possessed fcc symmetry with preferred orientation along (200) plane. The presence of metallic Ti was also confirmed by XPS analysis. FESEM images depicted that the finite sized grains were uniformly distributed on the surface and AFM micrographs revealed roughness of the film. The electrical resistivity measured using four-point probe showed that the film deposited using d.c. magnetron sputtering has lower resistivity of ∼13 cm than the film deposited using e-beam evaporation technique, i.e. ∼60 cm. The hardness of Ti films deposited using d.c. magnetron sputtering has lower value (∼7.9 GPa) than the film deposited using e-beam technique (∼9.4 GPa).

  11. Noise Properties Of Thick-Film Conducting Lines For Integrated Inductors

    Directory of Open Access Journals (Sweden)

    Stadler Adam Witold

    2015-06-01

    Full Text Available Studies of noise properties of thick-film conducting lines from Au or PdAg conductive pastes on LTCC or alumina substrates are reported. Experiments have been carried out at the room temperature on samples prepared in the form of meanders by traditional screen-printing or laser-shaping technique. Due to a low resistance of the devices under test (DUTs, low-frequency noise spectra have been measured for the dc-biased samples arranged in a bridge configuration, transformer-coupled to a low-noise amplifier. The detailed analysis of noise sources in the signal path and its transfer function, including the transformer, has been carried out, and a procedure for measurement setup self-calibration has been described. The 1/f noise component originating from resistance fluctuations has been found to be dominant in all DUTs. The analysis of experimental data leads to the conclusion that noise is produced in the bends of meanders rather than in their straight segments. It occurs that noise of Au-based laser-shaped lines is significantly smaller than screen-printed ones. PdAg lines have been found more resistive but simultaneously less noisy than Au-based lines.

  12. Predicting the steady state thickness of passive films in order to prevent degradations of implant

    CERN Document Server

    Geringer, Jean; Macdonald, Digby D

    2014-01-01

    Some implants have approximately a lifetime of 15 years. The femoral stem, for example, should be made of 316L/316LN stainless steel. Fretting corrosion, friction under small displacements, should occur during human gait, due to repeated loadings and un-loadings, between stainless steel and bone for instance. Some experimental investigations of fretting corrosion have been practiced. As well known, metallic alloys and especially stainless steels are covered with a passive film that prevents from the corrosion and degradation. This passive layer of few nanometers, at ambient temperature, is the key of our civilization according to some authors. This work is dedicated to predict the passive layer thicknesses of stainless steel under fretting corrosion with a specific emphasis on the role of proteins. The model is based on the Point Defect Model (micro scale) and an update of the model on the friction process (micro-macro scale). Genetic algorithm was used for finding solution of the problem. The major results a...

  13. Mechanical properties of Pb-free solder alloys on thick film hybrid microcircuits

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez, C.L.; Vianco, P.T.; Rejent, J.A.; Hosking, F.M.

    1998-03-10

    The technology drivers of the electronics industry continue to be systems miniaturization and reliability, in addition to addressing a variety of important environmental issues. Although the Sn-Pb eutectic alloy is widely used as a joining material in the electronics industry, it has drawn environmental concern due to its Pb content. The solder acts both as an electrical and mechanical connection within the different packaging levels in an electronic device. New Pb-free solders are being developed at Sandia National Laboratories. The alloys are based on the Sn-Ag alloy, having Bi and Au additions. Prototype hybrid microcircuit (HMC) test vehicles have been assembled to evaluate Pb-free solders for Au-Pt-Pd thick film soldering. The test components consist of a variety of dummy chip capacitors and leadless ceramic chip carriers (LCCC`s). The mechanical properties of the joints were evaluated. The reflow profiles and the solid state intermetallic formation reaction will also be presented. Improved solder joint manufacturability and increased fatigue resistance solder alloys are the goals of these materials.

  14. Properties of ZnS:Cu,Cl Thick Film Electroluminescent Devices by Screen Printing Method

    Energy Technology Data Exchange (ETDEWEB)

    Rho, J. S.; Yoo, S. H.; Chang, H. J. [Dankook University, Chonan (Korea)

    2001-06-01

    The ZnS:Cu,Cl thick film electroluminescent devices with the stacking type(separated with phosphors and insulator layers) and the composite type (mixed with phosphor and insulator materials) emission layers were fabricated on ITO/glass substrates by the screen printing methods. The optical and electrical properties were investigated as functions of applied voltages and frequencies. In the stacking type, the luminance was about 58 cd/m{sup 2} at the applied voltage of 400Hz, 200V and increased to 420 cd/m{sup 2} with increasing the frequency to 30Hz. For the composite type devices, the threshold voltage was 45V and the maximum luminance was 670 cd/m{sup 2} at the driving condition of 200V, 30Hz. The value of luminance of the composite type device showed 1.5 times higher than that of stacking type device. The main emission peak was 512 nm of bluish-green color at 1 Hz frequency below and shifted to 452 nm in the driving frequency over 5Hz showing the blue emission color. There were no distinct differences of the main emission peaks and color coordinate for both samples. (author). 13 refs., 8 figs.

  15. Thick film processing of YBa sub 2 Cu sub 3 O sub 7 sub - sub x

    CERN Document Server

    Wells, J J

    2000-01-01

    texture in the substrates used. A J sub c of approx 10 sup 4 Acm sup - sup 2 77K, 0T, was obtained with a precursor solution of 0.00375 mol/dm sup 3. The current carrying length scale was measured to be approx 1 mm showing there is good connectivity between the 1-2 mu m diameter grains. A route for producing textured silver substrates, and two techniques for producing YBCO thick films have been studied with a view to demonstrating an economical route for the fabrication of long lengths of YBCO tape. Silver ingots cold rolled to a deformation of 98 % and recrystallised at 800 deg C for 24 hours gave a left brace 110 right brace texture with a FWHM in phi of approx 20deg. These were used as substrates for the epitaxial growth of YBCO by both a low pO sub 2 melt processing technique and an ultrasonic spray pyrolysis technique. The low pO sub 2 melt processing technique enabled the melting point of YBCO to be lowered to 945 degC at a pO sub 2 of 5x10 sup - sup 3 atm such that the YBCO could be resolidified from t...

  16. Crossover from negative to positive magnetoresistance in superconductor/ferromagnet composites thick films

    Energy Technology Data Exchange (ETDEWEB)

    Paredes, O. [Centro de Materiales, Facultad de Ingenieria, Universidad de Narino, Ciudad Universitaria Torobajo, Pasto (Colombia); Baca, E. [Grupo de Ingenieria de Nuevos Materiales, Departamento de Fisica, Universidad del Valle, A.A. 25360 Cali (Colombia); Fuchs, D. [Karlsruhe Institute of Technology, Institut fuer Festkoerperphysik, P.O. Box 3640, Karlsruhe (Germany); Moran, O., E-mail: omoranc@unal.edu.c [Laboratorio de Materiales Ceramicos y Vitreos, Departamento de Fisica, Universidad Nacional de Colombia, Sede Medellin, A.A. 568 Medellin (Colombia)

    2010-11-15

    Thick films of ((Bi, Pb){sub 2}Sr{sub 2}Ca{sub 2}Cu{sub 3}O{sub x}){sub 0.95}/(LaSr{sub 0.7}Mn{sub 0.3}O{sub 3}){sub 0.05} [(Bi-2223){sub 0.95}(LSMO){sub 0.05}] composites were fabricated on (0 0 1)-oriented LaAlO{sub 3} substrates by a simple melting-quenching-annealing method and their structural, morphological and magnetoelectrical properties carefully studied. Analysis of the X-ray diffraction patterns suggested a highly oriented growth along the c-axis of LSMO. This preferred orientation, with the crystal c-axis being perpendicular to the plane of the substrate, was considered to be indicative of a textured growth mode. Electrical and magnetic measurements showed the presence of ferromagnetism and superconductivity in the composite at temperatures above room temperature and below T{approx}50 K, respectively. A clear crossover from negative to positive magnetoresistance was observed at {approx}80 K in a magnetic field as strong as 5 T.

  17. Specific heat and heat conductivity of BaTiO{sub 3} polycrystalline films in the thickness range 20-1100 nm

    Energy Technology Data Exchange (ETDEWEB)

    Strukov, B A [Lomonosov Moscow State University, Moscow 119992 (Russian Federation); Davitadze, S T [Lomonosov Moscow State University, Moscow 119992 (Russian Federation); Kravchun, S N [Lomonosov Moscow State University, Moscow 119992 (Russian Federation); Taraskin, S A [Lomonosov Moscow State University, Moscow 119992 (Russian Federation); Goltzman, M [Ioffe Physico-Technical Institution RAS, St Petersburg 194021 (Russian Federation); Lemanov, V V [Ioffe Physico-Technical Institution RAS, St Petersburg 194021 (Russian Federation); Shulman, S G [Ioffe Physico-Technical Institution RAS, St Petersburg 194021 (Russian Federation)

    2003-07-02

    Thermal properties - specific heat and heat conductivity coefficient - of polycrystalline BaTiO{sub 3} films on massive substrates were studied as a function of the temperature and the film thickness by the ac-hot probe method. The anomalies of specific heat with the film thickness decreasing from 1100 to 20 nm revealed the reduction of T{sub c} and excess entropy of the ferroelectric phase transition which becomes diffused. The critical thickness of the film at which T{sub c} = 0 has been estimated as 2.5 nm.

  18. Low resistivity Ga-doped ZnO thin films of less than 100 nm thickness prepared by ion plating with direct current arc discharge

    OpenAIRE

    2007-01-01

    Low resistivity Ga-doped ZnO films were prepared on a glass substrate by ion plating with direct current arc discharge. Thickness dependent changes in the electrical properties of the films are reported, focusing on the thin films of less than 100 nm thickness. Structural analyses showed that the thinnest film of 30 nm thickness consists of well-oriented columnar grains normal to the substrate, and the resistivity was as low as 4.4×10−4 Ω cm. The changes in lattice strain and c-axis fluctuati...

  19. Influence of dosing sequence and film thickness on structure and resistivity of Al-ZnO films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Pollock, Evan B., E-mail: ebpollock@gmail.com; Lad, Robert J. [Laboratory for Surface Science and Technology, University of Maine, 5708 ESRB-Barrows Hall, Orono, Maine 04469 (United States)

    2014-07-01

    Aluminum-doped zinc oxide (AZO) films were deposited onto amorphous silica substrates using an atomic layer deposition process with diethyl zinc (DEZ), trimethyl aluminum (TMA), and deionized water at 200 °C. Three different Al doping sequences were used at a ZnO:Al ratio of 11:1 within the films. A minimum film resistivity of 1.6 × 10{sup −3} Ω cm was produced using sequential dosing of DEZ, TMA, DEZ, followed by H{sub 2}O for the Al doping step. This “ZAZW” sequence yielded an AZO film resistivity that is independent of film thickness, crystallographic texture, and grain size, as determined by high resolution x-ray diffraction (XRD). A pseudo-Voigt analysis method yields values for grain sizes that are smaller than those calculated using other XRD methods. Anisotropic grain sizes or variations in crystallographic texture have minimal influence on film resistivity, which suggests that factors other than film texture, such as intragrain scattering, may be important in influencing film resistivity.

  20. Quantitative two-dimensional measurement of oil-film thickness by laser-induced fluorescence in a piston-ring model experiment.

    Science.gov (United States)

    Wigger, Stefan; Füßer, Hans-Jürgen; Fuhrmann, Daniel; Schulz, Christof; Kaiser, Sebastian A

    2016-01-10

    This paper describes advances in using laser-induced fluorescence of dyes for imaging the thickness of oil films in a rotating ring tribometer with optical access, an experiment representing a sliding piston ring in an internal combustion engine. A method for quantitative imaging of the oil-film thickness is developed that overcomes the main challenge, the accurate calibration of the detected fluorescence signal for film thicknesses in the micrometer range. The influence of the background material and its surface roughness is examined, and a method for flat-field correction is introduced. Experiments in the tribometer show that the method yields quantitative, physically plausible results, visualizing features with submicrometer thickness.

  1. Exploring electronic structure of one-atom thick polycrystalline graphene films: A nano angle resolved photoemission study

    Science.gov (United States)

    Avila, José; Razado, Ivy; Lorcy, Stéphane; Fleurier, Romain; Pichonat, Emmanuelle; Vignaud, Dominique; Wallart, Xavier; Asensio, María C.

    2013-01-01

    The ability to produce large, continuous and defect free films of graphene is presently a major challenge for multiple applications. Even though the scalability of graphene films is closely associated to a manifest polycrystalline character, only a few numbers of experiments have explored so far the electronic structure down to single graphene grains. Here we report a high resolution angle and lateral resolved photoelectron spectroscopy (nano-ARPES) study of one-atom thick graphene films on thin copper foils synthesized by chemical vapor deposition. Our results show the robustness of the Dirac relativistic-like electronic spectrum as a function of the size, shape and orientation of the single-crystal pristine grains in the graphene films investigated. Moreover, by mapping grain by grain the electronic dynamics of this unique Dirac system, we show that the single-grain gap-size is 80% smaller than the multi-grain gap recently reported by classical ARPES. PMID:23942471

  2. Obtenção de filmes espessos de seleneto de cobre sobre carbono vítreo, ouro, titânio e cobre Obtaining copper selenide thick films on vitreous carbon, gold, titanium and copper

    Directory of Open Access Journals (Sweden)

    Adriano César Rabelo

    2007-04-01

    Full Text Available Copper selenide (berzelianite films were prepared on the title substrates using the chemical bath deposition technique (CBD. Film composition was determined by energy dispersion of x-rays. The kinetics of film growth is parabolic and film adherence limits the film thickness. On titanium, copper selenide forms islands that do not completely cover the surface, unless the substrate is prepared with a tin oxide layer; film composition also depends on the titanium oxide layer. On vitreous carbon, CBD and mechanical immobilization techniques lead to films with similar resistances for the electron transfer across the film/substrate interface. On gold, composition studies revealed that film composition is always the same if the pH is in the range from 8 to 12, in contrast to films prepared by an ion-ion combination route. On copper, a new procedure for obtaining copper selenide films as thick as 5 µm has been developed.

  3. Influence of layer thickness on the structure and the magnetic properties of Co/Pd epitaxial multilayer films

    Energy Technology Data Exchange (ETDEWEB)

    Tobari, Kousuke, E-mail: tobari@futamoto.elect.chuo-u.ac.jp [Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan); Ohtake, Mitsuru; Nagano, Katsumasa; Futamoto, Masaaki [Faculty of Science and Engineering, Chuo University, Bunkyo-ku, Tokyo 112-8551 (Japan)

    2012-03-15

    Co/Pd epitaxial multilayer films were prepared on Pd(111){sub fcc} underlayers hetero-epitaxially grown on MgO(111){sub B1} single-crystal substrates at room temperature by ultra-high vacuum RF magnetron sputtering. In-situ reflection high energy electron diffraction shows that the in-plane lattice spacing of Co on Pd layer gradually decreases with increasing the Co layer thickness, whereas that of Pd on Co layer remains unchanged during the Pd layer formation. The CoPd alloy phase formation is observed around the Co/Pd interface. The atomic mixing is enhanced for thinner Co and Pd layers in multilayer structure. With decreasing the Co and the Pd layer thicknesses and increasing the repetition number of Co/Pd multilayer film, stronger perpendicular magnetic anisotropy is observed. The relationships between the film structure and the magnetic properties are discussed. - Highlights: Black-Right-Pointing-Pointer Epitaxial Co/Pd multilayer films are prepared on Pd(111){sub fcc} underlayers. Black-Right-Pointing-Pointer Lattice strain in Co layer and CoPd-alloy formation are noted around the interface. Black-Right-Pointing-Pointer Magnetic property dependence on layer thickness is reported.

  4. MgB{sub 2} thick film with T{sub C}=40.2 K deposited on sapphire substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Kaicheng; Ding, Li-li; Zhuang, Cheng-gang; Chen, Li-ping; Chen, Chinping; Feng, Qing-rong [Department of Physics, Peking University, Beijing 100871 (China)

    2006-08-15

    A thick MgB{sub 2} film has been successfully deposited on a (001) crystalline surface of sapphire by the method of hybrid physical-chemical vapor deposition (HPCVD). The film thickness is about 1.3 {mu}m, having a dense and interlaced structure. The film surface, as shown by scanning electron microscopy, is stacked with MgB{sub 2} microcrystals. Transport measurements using the four-probe technique demonstrate that its critical temperature is about 40.2 K, with a sharp transition width of 0.15 K. The transition is higher by 1 K than those commonly reported at 39 K. The residual resistivity ratio (RRR) is about 11. By extrapolation, H{sub C2}(0) is determined as 13.7 T from magneto-transport measurements. Also, from hysteresis measurements and applying the Bean model, the critical current density is estimated as 5 x 10{sup 10} A/m{sup 2} in zero magnetic field. The investigation demonstrates that HPCVD is an effective technique to fabricate MgB{sub 2} thick films with decent superconducting properties. Hence, it is important for future superconducting applications, in particular as a crucial preliminary stage in the fabrication of superconducting tape. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Spin Hall magnetoresistance in Co2FeSi/Pt thin films: dependence on Pt thickness and temperature

    Science.gov (United States)

    Huang, Xiufeng; Dai, Zhiwen; Huang, Lin; Lu, Guangduo; Liu, Min; Piao, Hongguang; Kim, Dong-Hyun; Yu, Seong-cho; Pan, Liqing

    2016-11-01

    We have investigated the temperature and the Pt layer thickness dependence of the magnetoresistances (MRs) in Co2FeSi/Pt thin films. Based on the field dependent measurements, it can be seen that the spin-current-induced spin Hall magnetoresistance (SMR) plays the dominant role in the MRs in the Co2FeSi/Pt bilayers in the whole temperature range. Meanwhile, a quite small part of anisotropic magnetoresistance (AMR) existed in the MRs. It proved to be originated from magnetic proximity effect (MPE) by measuring the Pt thickness and temperature dependence of the AMR. Moreover, the Co2FeSi layer thickness has much weaker effect on the SMR and AMR compared to the Pt layer thickness. These results indicate that the Co2FeSi/Pt interface is beneficial to be used in the spin-current-induced physical phenomena.

  6. Photoluminescence of dense nanocrystalline titanium dioxide thin films: effect of doping and thickness and relation to gas sensing.

    Science.gov (United States)

    Mercado, Candy; Seeley, Zachary; Bandyopadhyay, Amit; Bose, Susmita; McHale, Jeanne L

    2011-07-01

    The photoluminescence (PL) of dense nanocrystalline (anatase) TiO(2) thin films is reported as a function of calcination temperature, thickness, and tungsten and nickel doping. The dependence of the optical absorption, Raman spectra, and PL spectra on heat treatment and dopants reveals the role of oxygen vacancies, crystallinity, and phase transformation in the performance of TiO(2) films used as gas sensors. The broad visible PL from defect states of compact and undoped TiO(2) films is found to be much brighter and less sensitive to the presence of oxygen than that of mesoporous films. The dense nanocrystalline grains and the nanoparticles comprising the mesoporous film are comparable in size, demonstrating the importance of film morphology and carrier transport in determining the intensity of defect photoluminescence. At higher calcination temperatures, the transformation to rutile results in the appearance of a dominant near-infrared peak. This characteristic change in the shape of the PL spectra demonstrates efficient capture of conduction band electrons by the emerging rutile phase. The W-doped samples show diminished PL with quenching on the red side of the emission spectrum occurring at lower concentration and eventual disappearance of the PL at higher W concentration. The results are discussed within the context of the performance of the TiO(2) thin films as CO gas sensors and the chemical nature of luminescent defects.

  7. Thickness Dependence of Optoelectrical Properties of Mo-Doped In2O3 Films Deposited on Polyethersulfone Substrates by Ion-Beam-Assisted Evaporation

    Directory of Open Access Journals (Sweden)

    Chin-Chiuan Kuo

    2010-01-01

    Full Text Available Indium molybdenum oxide (IMO films were deposited onto the polyethersulfone (PES substrates by ion-beam-assisted evaporation (IBAE deposition at low temperature in this study. The effects of film thickness on their optical and electrical properties were investigated. The results show that the deposited IMO films exhibit a preferred orientation of B(222. The electrical resistivity of the deposited film initially reduces then subsequently increases with film thickness. The IMO film with the lowest resistivity of 7.61 × 10−4 ohm-cm has been achieved when the film thickness is 120 nm. It exhibits a satisfactory surface roughness pv of 8.75 nm and an average visible transmittance of 78.7%.

  8. Evaluation of the effect of porosity and substrate on the piezoelectric behaviour of thick-film PZT elements

    Energy Technology Data Exchange (ETDEWEB)

    Gwirc, S N [Instituto Nacional de TecnologIa Industrial, Electronica e Informatica, CC 157, B1650WAB San Martin, Buenos Aires (Argentina); Negreira, C A [Instituto de Fisica, Laboratorio de Acustica Ultrasonora, Facultad de Ciencias, Igua 4225, 11400 Montevideo (Uruguay)

    2006-10-07

    This work presents a method to establish the elastic and piezoelectric constants of a thick film screen printed PZT composite over an alumina substrate. The calculus procedure uses as input data the parameters from the bulk material because it is basically the same component of which the thick film paste is manufactured. We also need to know frequencies of resonance and anti-resonance as well as the permittivity and density of the film in a poled disc sample. This method takes into account three factors: the additional components such as the glass frit, porosity of the film caused by the low temperature sinter process and the film clamping to the substrate. Each one of these factors reduces the piezoelectric efficiency by a different amount and, consequently, the measured values of the constants. The results obtained in this way are compared with experimental measurements of the effective piezoelectric charge constant d{sub 33} and permittivity with good agreement. Small discrepancies could be explained mainly due to lack of homogeneity in glass as well as in pore distribution.

  9. Effect of thickness on physical properties of electron beam vacuum evaporated CdZnTe thin films for tandem solar cells

    Science.gov (United States)

    Chander, Subhash; Dhaka, M. S.

    2016-10-01

    The thickness and physical properties of electron beam vacuum evaporated CdZnTe thin films have been optimized in the present work. The films of thickness 300 nm and 400 nm were deposited on ITO coated glass substrates and subjected to different characterization tools like X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) to investigate the structural, optical, electrical and surface morphological properties respectively. The XRD results show that the as-deposited CdZnTe thin films have zinc blende cubic structure and polycrystalline in nature with preferred orientation (111). Different structural parameters are also evaluated and discussed. The optical study reveals that the optical transition is found to be direct and energy band gap is decreased for higher thickness. The transmittance is found to increase with thickness and red shift observed which is suitable for CdZnTe films as an absorber layer in tandem solar cells. The current-voltage characteristics of deposited films show linear behavior in both forward and reverse directions as well as the conductivity is increased for higher film thickness. The SEM studies show that the as-deposited CdZnTe thin films are found to be homogeneous, uniform, small circle-shaped grains and free from crystal defects. The experimental results confirm that the film thickness plays an important role to optimize the physical properties of CdZnTe thin films for tandem solar cell applications as an absorber layer.

  10. Selective-Area Growth of Thick Diamond Films Using Chemically Stable Masks of Ru/Au and Mo/Au

    Science.gov (United States)

    Nagase, Masanori; Watanabe, Katsumi; Umezawa, Hitoshi; Shikata, Shinichi

    2012-07-01

    Selective-area growth of diamond films in microwave-plasma chemical vapor deposition was performed using newly developed masks. By forming chemically stable masks made of Ru/Au or Mo/Au, which have high melting points, good adhesion to diamond, and difficulty in forming carbide compounds, patterned diamond films with a large thickness of 50 µm, a large area of 5 mm2, and a high orientation in the [001] direction were successfully grown on (001) diamond substrates without degradation of the crystal quality of masked areas.

  11. Self-organized thickness engineering of Al thin films by alternation of dense and diluted atomic layers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Ying; Wu, Kehui; Tang, Zhe; Wang, Enge [Institute of Physics, Chinese Academy of Sciences, Beijing 100080 (China); Ebert, Philipp [Institut fuer Festkoerperforschung, Forschungszentrum Juelich GmbH, 52425 Juelich (Germany)

    2007-07-01

    We studied the growth of Al on Si(111)-{radical}(3) x {radical}(3)-Al substrates by by scanning tunneling microscopy and low energy electron diffraction. We found that the Al film grown on an atomically sharp Al/Si interface exhibits of a superlattice structure of alternating densely-packed (1 x 1) and loosely-packed (likely {radical}(3) x {radical}(3)) atomic layers, at film thicknesses 0.9 nm. Above 0.9 nm Al starts to grow in the normal stacking of Al(111) layers. The phenomenon is explained within the theory of the quantum size effects in a jellium metal combined with strain effects.

  12. Note: Accurate determination of thickness of multiple layers of thin film deposited on a piezoelectric quartz crystal.

    Science.gov (United States)

    Wajid, Abdul

    2013-10-01

    Modern day piezoelectric quartz crystal microbalances for thin film deposition control are based on Z-match equation, which is mathematically valid for deposition of a single material on a given quartz crystal. When multiple layers are deposited, thickness and deposition rate errors accumulate due to mismatch of acoustic impedance of different materials. Here we present a novel method, based on the acoustic transfer matrix formalism, for accurate determination of thickness of an arbitrary number of layers of dissimilar materials deposited on a quartz crystal. Laboratory data show excellent accuracy of the method compared to conventional Z-match equation.

  13. Effect of thickness on the electrical and optical properties of epitaxial (La0.07Ba0.93)SnO3 thin films

    Science.gov (United States)

    Liu, Qinzhuang; Jin, Feng; Dai, Jianming; Li, Bing; Geng, Lei; Liu, Jianjun

    2016-08-01

    Transparent conductive oxide (La0.07Ba0.93)SnO3 (LBSO) thin films with thickness ranged from 220 nm to 11 nm were epitaxially grown on MgO substrate by pulsed laser deposition. The effect of thickness on the structural, transport, and optical properties of LBSO thin films was investigated in detail. With the film thickness decreasing, x-ray diffraction characterizations show that the LBSO (002) diffraction peak has no obvious shift, but the values of the full width at half maximum increase gradually from 0.608° to 1.136° due to the deterioration of crystalline quality of LBSO films. Atomic force microcopy reveals that the root-mean-square surface roughness of LBSO films decreases from 3.93 to 0.268 nm with film thickness decreasing. The lowest resistivity value of 1.181 × 10-4 Ωcm at room temperature was observed in 220 nm thick films, with the highest carrier mobility of 41.06 cm2 V-1 s-1 and carrier concentration of 8.377 × 1020 cm-3. Furthermore, the resistivity increases gradually with the decrease of LBSO film thickness. Temperature dependent resistivity measurements indicate that the metal-semiconductor transition temperature of LBSO thin film changes regularly with the film thickness. The optical band gap of LBSO thin film decreases from 4.58 to 3.55 eV with decreasing the thickness, which was explained by the Burstein-Moss effect.

  14. Effect of thickness on nanostructured SnO2 thin films by spray pyrolysis as highly sensitive H2S gas sensor.

    Science.gov (United States)

    Patil, G E; Kajale, D D; Gaikwad, V B; Jain, G H

    2012-08-01

    Nanostructured SnO2 thin films were prepared by spray pyrolysis technique onto glass substrates with different thickness by varying quantity of precursor solution. The structural, optical and electrical properties of these films have been studied. The crystallographic structure of the films was studied by X-ray diffraction (XRD). It is found that the films are tetragonal with (110) orientation. The grain size increases with thickness. Atomic Force Microscopy (AFM) showed that the nanocrystalline nature of the films with porous nature. The grain size increased 14 to 29 nm with increase in film thickness. The studies on the optical properties show that the direct band gap value decreases from 3.75 to 3.50 eV. The temperature dependence of the electrical conductivity was studied. The activation energies of the films are calculated from the conductance temperature characteristics. The nanostructured SnO2 thin films were used as sensing layers for resistive gas sensors. The dependence of gas sensing properties on the thickness of SnO2 thin films was investigated. The gas response of the SnO2 thin films towards the H2S gas was determined at an operating temperature of 150 degrees C. The sensitivity towards H2S gas is strongly depending on surface morphology of the SnO2 thin films.

  15. Large Electrocaloric Effect in Relaxor Ferroelectric and Antiferroelectric Lanthanum Doped Lead Zirconate Titanate Ceramics

    Science.gov (United States)

    Lu, Biao; Li, Peilian; Tang, Zhenhua; Yao, Yingbang; Gao, Xingsen; Kleemann, Wolfgang; Lu, Sheng-Guo

    2017-01-01

    Both relaxor ferroelectric and antiferroelectric materials can individually demonstrate large electrocaloric effects (ECE). However, in order to further enhance the ECE it is crucial to find a material system, which can exhibit simultaneously both relaxor ferroelectric and antiferroelectric properties, or easily convert from one into another in terms of the compositional tailoring. Here we report on a system, in which the structure can readily change from antiferroelectric into relaxor ferroelectric and vice versa. To this end relaxor ferroelectric Pb0.89La0.11(Zr0.7Ti0.3)0.9725O3 and antiferroelectric Pb0.93La0.07(Zr0.82Ti0.18)0.9825O3 ceramics were designed near the antiferroelectric-ferroelectric phase boundary line in the La2O3-PbZrO3-PbTiO3 phase diagram. Conventional solid state reaction processing was used to prepare the two compositions. The ECE properties were deduced from Maxwell relations and Landau-Ginzburg-Devonshire (LGD) phenomenological theory, respectively, and also directly controlled by a computer and measured by thermometry. Large electrocaloric efficiencies were obtained and comparable with the results calculated via the phenomenological theory. Results show great potential in achieving large cooling power as refrigerants. PMID:28345655

  16. Study of Synchrotron Radiation Near-Edge X-Ray Absorption Fine-Structure of Amorphous Hydrogenated Carbon Films at Various Thicknesses

    Directory of Open Access Journals (Sweden)

    Sarayut Tunmee

    2015-01-01

    Full Text Available The compositions and bonding states of the amorphous hydrogenated carbon films at various thicknesses were evaluated via near-edge X-ray absorption fine-structure (NEXAFS and elastic recoil detection analysis combined with Rutherford backscattering spectrometry. The absolute carbon sp2 contents were determined to decrease to 65% from 73%, while the hydrogen contents increase from 26 to 33 at.% as the film thickness increases. In addition, as the film thickness increases, the π⁎ (C=C, σ⁎ (C–H, σ⁎ (C=C, and σ⁎ (C≡C bonding states were found to increase, whereas the π⁎ (C≡C and σ⁎ (C–C bonding states were observed to decrease in the NEXAFS spectra. Consequently, the film thickness is a key factor to evaluate the composition and bonding state of the films.

  17. Controlling the Performance of P-type Cu2O/SnO Bilayer Thin-Film Transistors by Adjusting the Thickness of the Copper Oxide Layer

    KAUST Repository

    Al-Jawhari, Hala A.

    2014-11-11

    The effect of copper oxide layer thickness on the performance of Cu2O/SnO bilayer thin-film transistors was investigated. By using sputtered Cu2O films produced at an oxygen partial pressure, Opp, of 10% as the upper layer and 3% Opp SnO films as the lower layer we built a matrix of bottom-gate Cu2O/SnO bilayer thin-film transistors of different thickness. We found that the thickness of the Cu2O layer is of major importance in oxidation of the SnO layer underneath. The thicker the Cu2O layer, the more the underlying SnO layer is oxidized, and, hence, the more transistor mobility is enhanced at a specific temperature. Both device performance and the annealing temperature required could be adjusted by controlling the thickness of each layer of Cu2O/SnO bilayer thin-film transistors.

  18. Thickness dependence of magnetic anisotropy and domains in amorphous Co40Fe40B20 thin films grown on PET flexible substrates

    Science.gov (United States)

    Tang, Zhenhua; Ni, Hao; Lu, Biao; Zheng, Ming; Huang, Yong-An; Lu, Sheng-Guo; Tang, Minghua; Gao, Ju

    2017-03-01

    The amorphous Co40Fe40B20 (CoFeB) films (5-200 nm in thickness) were grown on flexible polyethylene terephthalate (PET) substrates using the DC magnetron-sputtering method. The thickness dependence of structural and magnetic properties of flexible CoFeB thin films was investigated in detail. The in-plane uniaxial magnetic anisotropy induced by strain as a function of thickness was obtained in flexible CoFeB thin films, and a critical thickness of 150 nm for in-plane magnetic anisotropy was observed. Moreover, the domains and the uniaxial anisotropy as a function of angular direction of applied magnetic field were characterized. The results show potential for designing CoFeB-based flexible spintronic devices in which the physical parameters could be tailored by controlling the thickness of the thin film.

  19. Reproducibility of XPS analysis for film thickness of SiO{sub 2}/Si by active Shirley method

    Energy Technology Data Exchange (ETDEWEB)

    Matsumoto, Ryo, E-mail: MATSUMOTO.Ryo@nims.go.jp [National Institute of Technology, Yonago College, Tottori 683-8502 (Japan); Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba 305-8577 (Japan); National Institute for Materials Science, Tsukuba 305-0044 (Japan); Nishizawa, Yugo; Kataoka, Noriyuki; Tanaka, Hiromi [National Institute of Technology, Yonago College, Tottori 683-8502 (Japan); Yoshikawa, Hideki; Tanuma, Shigeo [National Institute for Materials Science, Tsukuba 305-0044 (Japan); Yoshihara, Kazuhiro [Scienta Omicron, Inc, Tokyo 140-0013 (Japan)

    2016-02-15

    Highlights: • We proposed a new advantage for estimation of XPS background in active Shirley method. • Active Shirley method can estimate a reproducible background without operator dependence. • Active Shirley method demonstrated that the thickness of the SiO{sub 2} film was estimated at 9.71 ± 0.14 nm from noisy Si 2p peaks in the commonly-used range. • We developed practical software including useful GUI with active Shirley method. - Abstract: The active Shirley method has been recently proposed for reproducibly estimating the background and peaks of X-ray photoelectron spectroscopy (XPS) spectra because of its automatic tuning of starting and ending points of the Shirley-type background spectra. This reproducibility is significantly affected not only by a software algorithm of the active Shirley method but also by a choice of the initial ending points or a shape of Voigt function. In this work, we provided an example of the reproducibility of XPS analysis for SiO{sub 2} film (9.2 nm thick) on Si wafer by changing the range of initial ending points or a shape of Voigt function in the active Shirley method. It demonstrated that the thickness of the SiO{sub 2} film was estimated at 9.71 ± 0.14 nm from noisy Si 2p peaks in the commonly-used range.

  20. Effect of the nanometric scale thickness on the magnetization steps in Ca₃Co₂O₆ thin films.

    Science.gov (United States)

    Moubah, Reda; Colis, Silviu; Ulhaq-Bouillet, Corinne; Drillon, Marc; Dinia, Aziz

    2011-07-13

    We report on the effect of the film thickness on the magnetic properties of Ca₃Co₂O₆films with an emphasis on the magnetization steps usually observed in the M-H curves below 10 K. Films with thicknesses between 35 and 200 nm all present two magnetic transitions at about T(C₁) = 22 K and T(C₂) = 10 K, corresponding to a 3D long range ferrimagnetic order and the transition to the formation of a frozen spin state, respectively. The magnetization curves at 10 K exhibit the expected stepped variation. However, by decreasing the thickness below a critical value of about 60 nm, no magnetization plateau is observed when the M-H curve is recorded at 2 K. Moreover, an additional transition in the susceptibility curve is observed at 45 K. These changes can be attributed to the reduced coherence length of the propagation vector along and perpendicular to the chains, and are supported by the magnetization relaxation measurements which indicate a reduction of the relaxation time. These results are helpful for understanding the origin of the magnetization steps in the one-dimensional Ca₃Co₂O₆ cobaltite and confront the theoretical models aimed at explaining the magnetic properties in this system.

  1. Influence of high rotational speeds on heat transfer and oil film thickness in aero-engine bearing chambers

    Science.gov (United States)

    Wittig, S.; Glahn, A.; Himmelsbach, J.

    1994-04-01

    Increasing the thermal loading of bearing chambers in modern aero-engines requires advanced techniques for the determination of heat transfer characteristics. In the present study, film thickness and heat transfer measurements have been carried out for the complex two-phase oil/air flow in bearing chambers. In order to ensure real engine conditions, a new test facility has been built up, designed for rotational speeds up to n = 16,000 rpm and maximum flow temperatures of T(sub max) = 473 K. Sealing air and lubrication oil flow can be varied nearly in the whole range of aero-engine applications. Special interest is directed toward the development of an ultrasonic oil film thickness measuring technique, which can be used without any reaction on the flow inside the chamber. The determination of local heat transfer at the bearing chamber housing is based on a well-known temperature gradient method using surface temperature measurements and a finite element code to determine temperature distributions within the bearing chamber housing. The influence of high rotational speed on the local heat transfer and the oil film thickness is discussed.

  2. High quality Y-type hexaferrite thick films for microwave applications by an economical and environmentally benign crystal growth technique

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Bolin; Chen, Yajie, E-mail: y.chen@neu.edu; Gillette, Scott; Su, Zhijuan; Harris, Vincent G. [Center for Microwave Magnetic Materials and Integrated Circuits and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States); Wolf, Jason; McHenry, Michael E. [Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

    2014-02-17

    Thick barium hexaferrite Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} (i.e., Zn{sub 2}Y) films having thicknesses of ∼100 μm were epitaxially grown on MgO (111) substrates using an environmentally benign ferrite-salt mixture by vaporizing the salt. X-ray diffraction pole figure analyses showed (00l) crystallographic alignment with little in plane dispersion confirming epitaxial growth. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 2.51 ± 0.1 kG with an out of plane magnetic anisotropy field H{sub A} of 8.9 ± 0.1 kOe. Ferromagnetic resonance linewidth, as the peak-to-peak power absorption derivative at 9.6 GHz, was measured to be 62 Oe. These properties demonstrate a rapid, convenient, cost-effective, and nontoxic method of growing high quality thick crystalline ferrite films which could be used widely for microwave device applications.

  3. Thickness and component distributions of yttrium-titanium alloy films in electron-beam physical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    LI ShuaiHui; SHU YongHua; FAN Jing

    2008-01-01

    Thickness and component distributions of large-area thin films are an issue of in-ternational concern in the field of material processing. The present wor0k employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal reso-nators, deposited film thickness distribution measured by Rutherford backscat-tering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.

  4. Thickness and component distributions of yttrium-titanium alloy films in electron-beam physical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Thickness and component distributions of large-area thin films are an issue of in-ternational concern in the field of material processing. The present work employs experiments and direct simulation Monte Carlo (DSMC) method to investigate three-dimensional low-density, non-equilibrium jets of yttrium and titanium vapor atoms in an electron-beams physical vapor deposition (EBPVD) system furnished with two or three electron-beams, and obtains their deposition thickness and component distributions onto 4-inch and 6-inch mono-crystal silicon wafers. The DSMC results are found in excellent agreement with our measurements, such as evaporation rates of yttrium and titanium measured in-situ by quartz crystal reso-nators, deposited film thickness distribution measured by Rutherford backscat-tering spectrometer (RBS) and surface profilometer and deposited film molar ratio distribution measured by RBS and inductively coupled plasma atomic emission spectrometer (ICP-AES). This can be taken as an indication that a combination of DSMC method with elaborate measurements may be satisfactory for predicting and designing accurately the transport process of EBPVD at the atomic level.

  5. Optical constants and fitted transmittance spectra of varies thickness of polycrystalline ZnSe thin films in terms of spectroscopic ellipsometry

    Energy Technology Data Exchange (ETDEWEB)

    Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.com [Physics Department, Faculty of Science, Al-Azhar University, Assiut 71542 (Egypt)

    2013-06-25

    Highlights: ► Different thicknesses of ZnSe films were prepared. ► The microstructure parameters of the films have been determined. ► Spectroscopic ellipsometry parameters were analyzed to determine the optical constants. ► Transmittance spectra has been simulated using Murmann’s exact equation. -- Abstract: Different thickness of Zinc selenide (ZnSe) thin films were deposited onto glass substrates by the thermal evaporation technique. Their structural characteristics were studied by X-ray diffraction (XRD). The microstructure parameters, crystallite size and microstrain were calculated. The optical constants (n, k) and film thicknesses of ZnSe thin films were obtained by fitting the ellipsometric parameters (ψ and Δ) data using three layer model systems in the wavelength range 300–1100 nm. It is found that the refractive index, n increases with the increase of the film thickness. The possible optical transition in these films is found to be allowed direct transitions. The optical energy gap increase with increasing the film thickness in a narrow range. The experimental transmittances spectrum can be fitted in terms Murmann’s exact equation using the modeled thickness and optical constants obtained spectroscopic ellipsometry model.

  6. A high energy density relaxor antiferroelectric pulsed capacitor dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Hwan Ryul; Lynch, Christopher S. [Department of Mechanical and Aerospace Engineering, University of California, Los Angeles (UCLA), Los Angeles, California 90095 (United States)

    2016-01-14

    Pulsed capacitors require high energy density and low loss, properties that can be realized through selection of composition. Ceramic (Pb{sub 0.88}La{sub 0.08})(Zr{sub 0.91}Ti{sub 0.09})O{sub 3} was found to be an ideal candidate. La{sup 3+} doping and excess PbO were used to produce relaxor antiferroelectric behavior with slim and slanted hysteresis loops to reduce the dielectric hysteresis loss, to increase the dielectric strength, and to increase the discharge energy density. The discharge energy density of this composition was found to be 3.04 J/cm{sup 3} with applied electric field of 170 kV/cm, and the energy efficiency, defined as the ratio of the discharge energy density to the charging energy density, was 0.920. This high efficiency reduces the heat generated under cyclic loading and improves the reliability. The properties were observed to degrade some with temperature increase above 80 °C. Repeated electric field cycles up to 10 000 cycles were applied to the specimen with no observed performance degradation.

  7. Surface and Interface Properties of 10–12 Unit Cells Thick Sputter Deposited Epitaxial CeO2 Films

    Directory of Open Access Journals (Sweden)

    L. V. Saraf

    2008-01-01

    Full Text Available Ultrathin and continuous epitaxial films with relaxed lattice strain can potentially maintain more of its bulk physical and chemical properties and are useful as buffer layers. We study surface, interface, and microstructural properties of ultrathin (∼10–12 unit cells thick epitaxial ceria films grown on single crystal YSZ substrates. The out-of -plane and in-plane lattice parameters indicate relaxation in the continuous film due to misfit dislocations seen by high-resolution transmission electron microscopy (HRTEM and substrate roughness of ∼1-2 unit cells, confirmed by atomic force microscopy and HRTEM. A combination of secondary sputtering, lattice mismatch, substrate roughness, and surface reduction creating secondary phase was likely the cause of surface roughness which should be reduced to a minimum level for effective use of it as buffer layers.

  8. Motion picture imaging of a nanometer-thick liquid film dewetting by ellipsometric microscopy with a submicrometer lateral resolution.

    Science.gov (United States)

    Fukuzawa, Kenji; Yoshida, Tomohiko; Itoh, Shintaro; Zhang, Hedong

    2008-10-21

    We visualized the detwetting of a nanometer-thick unstable liquid film on a nanotextured solid surface with a high lateral spatial resolution. The dewetting was imaged as a motion picture at a submicrometer spatial resolution and a frame rate of 4 frames/s, using ellipsometric microscopy in a vertical objective configuration. The observation revealed that the dewetting process significantly depends on the sign of the disjoining pressure Pi. When Pi is negative, the film rupture due to the spinodal dewetting proceeds to droplet formation in a single step, whereas, when Pi is positive, the film rupture due to the spinodal dewetting stops when the pressure of the thicker region balances with that of the thinner region, and then the heterogeneous grooves are nucleated and grow. The dewetting process dependence on the sign of Pi can be found in systems other than that reported here because the sign of Pi changes at the local maximum of the surface energy.

  9. The structural, transport and optical properties of screen printed Cu[sub x]S thick films

    Energy Technology Data Exchange (ETDEWEB)

    Sebastian, P.J.; Gomez-Daza, O.; Campos, J.; Banos, Leticia; Nair, P.K. (Photovoltaic Systems Group, Lab. de Energia Solar IIM, UNAM, Morelos (Mexico))

    1994-02-01

    The structural, transport and optical properties of screen printed Cu[sub x]S thick films with possible application in photovoltaic and photothermal devices are reported. The X-ray diffraction studies show that the screen printed films are stable up to about 220[sup o]C in air and belong to the Cu[sub x]S structure. Above this temperature it decomposes mainly to CuSO[sub 4]. The electrical conductivity depends on the sintering temperature and the amount of flux, Cu(NO[sub 3])[sub 2], used in the paste for screen printing. The differential scanning calorimetry studies reveal the phase changes occurring during heating and pertaining to the dependence of electrical conductivity on the sintering temperature. A configuration consisting of screen printed Cu[sub x]S on chemically deposited and annealed (at 200[sup o]C) CdS thin film exhibited rectification

  10. Wet/dry film thickness measurement of paint by absorption spectroscopy with acousto-optic tunable filter spectrometer

    Science.gov (United States)

    Sinha, Pranay G.; Xiong, Xiangchun; Jin, Feng; Trivedi, Sudhir; Prasad, Narashima S.

    2005-08-01

    Controlling/monitoring the thickness of applied paint in real time is important to many situations including painting ship and submarine hulls in dry docks for maintaining health of ships and submarines against the harshness of the sea, in automobile and aerospace industries, and in a variety of other industries as a control sensor that plays significant role in product quality, process control, and cost control. Insufficient thickness results to inadequate protection while overspray leads to waste and pollution of the environment. A rugged instrumentation for the real time non-contact accurate measurement of wet and dry paint film thickness measurement will be immensely valuable. As paint is applied with several layers of the same or different type, thickness of each newly sprayed wet layer is of most interest, but measurement on dry paint is also useful. In this study, we use acousto-optic tunable filter-based near infrared spectrometer to obtain the absorption spectrum of layers of paint sprayed on sand blasted steel surface and thus measure the thickness of coating under both wet and dry situations. NIR spectra are obtained from 1100 to 2300 nm on four sample of different thickness of paint up to 127 micron. Partial least squares model built with the spectra shows good correlation with standard error of prediction within ~ 0.7 micron. Results indicate that the spectra also respond to the amount of organic solvent in the wet paint and can be used to monitor the degree of dryness of the paint in real time.

  11. γ-radiation Sensor Using Optical and Electrical Properties of Manganese Phthalocyanine (MnPc Thick Film

    Directory of Open Access Journals (Sweden)

    K. Arshak

    2002-05-01

    Full Text Available Manganese phthaloyanine polymer thick films were fabricated using screenprinting techniques. The optical parameters were obtained from the analysis of the absorption spectra over a wavelength range of 385-900nm. The d.c. electrical measurements were carried out in a range of 0-30 volts. The effects of γ-radiation on the optical and the electrical properties were investigated for dosimetry applications. The optical energy band gaps of these films showed a decrease in their values with the increase in the radiation dose. The electronic transition has changed from direct allowed for the as-printed films (unexposed to γ-rays to indirect allowed for the irradiated samples. Both the as-printed and irradiated Ag/MnPc/Ag devices demonstrated a Schottky conduction mechanism. Both the absorbance and the capacitance of the MnPc thick films displayed a highly consistent linear response to γ-ray exposure.

  12. Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Palneedi, Haribabu [Materials Interface Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Functional Ceramics Group, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of); Maurya, Deepam; Priya, Shashank [Bio-inspired Materials and Devices Laboratory (BMDL), Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Kim, Gi-Yeop; Choi, Si-Young, E-mail: youngchoi@kims.re.kr [Materials Modeling and Characterization Department, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of); Kang, Suk-Joong L. [Materials Interface Laboratory, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701 (Korea, Republic of); Kim, Kwang-Ho [School of Materials Science and Engineering, Pusan National University, Busan 609-735 (Korea, Republic of); Ryu, Jungho, E-mail: jhryu@kims.re.kr [Functional Ceramics Group, Korea Institute of Materials Science (KIMS), Changwon 641-831 (Korea, Republic of)

    2015-07-06

    A highly dense, 4 μm-thick Pb(Zr,Ti)O{sub 3} (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.

  13. Dye-Sensitized Nanostructured Crystalline Mesoporous Tin-doped Indium Oxide Films with Tunable Thickness for Photoelectrochemical Applications.

    Science.gov (United States)

    Hamd, W; Chavarot-Kerlidou, M; Fize, J; Muller, G; Leyris, A; Matheron, M; Courtin, E; Fontecave, M; Sanchez, C; Artero, V; Laberty-Robert, C

    2013-01-01

    A simple route towards nanostructured mesoporous Indium-Tin Oxide (templated nano-ITO) electrodes exhibiting both high conductivities and optimized bicontinuous pore-solid network is reported. The ITO films are first produced as an X-ray-amorphous, high surface area material, by adapting recently established template-directed sol-gel methods using Sn(IV) and In(III) salts. Carefully controlled temperature/atmosphere treatments convert the as-synthesized ITO films into nano-crystalline coatings with the cubic bixbyite structure. Specially, a multi-layered synthesis was successfully undertaken for tuning the film thickness. In order to evaluate the performances of templated nano-ITO as an electrode substrate for photoelectrochemical applications, photoelectrodes were prepared by covalent grafting of a redox-active dye, the complex [Ru(bpy)2(4,4'-(CH2PO3H2)2-bpy)]Cl21 (bpy=bipyridine). Surface coverage was shown to increase with the film thickness, from 0.7 × 10(-9) mol.cm(-2) (one layer, 45 nm) to 3.5 × 10(-9) mol.cm(-2) (ten layers, 470 nm), the latter value being ~ 100 times larger than that for commercially available planar ITO. In the presence of an electron mediator, photocurrents up to 50 μA.cm(-2) have been measured under visible light irradiation, demonstrating the potential of this new templated nano-ITO preparation for the construction of efficient photoelectrochemical devices.

  14. Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

    Science.gov (United States)

    Palneedi, Haribabu; Maurya, Deepam; Kim, Gi-Yeop; Priya, Shashank; Kang, Suk-Joong L.; Kim, Kwang-Ho; Choi, Si-Young; Ryu, Jungho

    2015-07-01

    A highly dense, 4 μm-thick Pb(Zr,Ti)O3 (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.

  15. Study of coercive fields and Kβ/Kα X-ray intensity ratios of nickel films in the thickness range of 5-2000 nm

    Science.gov (United States)

    Prajapat, C. L.; Singh, M. R.; Ravikumar, G.; Gupta, S. K.; Joseph, D.; Nayak, B. K.; Saxena, A.

    2012-06-01

    Coercive fields and X-Ray intensity ratios of the K-series lines of Ni films in the thickness range of 5-2000 nm deposited onto Si (111) substrate have been studied. The Coercive field is observed to increase with thickness and follows power law for the thickness range ≥ 50 nm. For lower thickness, there is a deviation from power law. A correlated change is also observed in the Kβ/Kα X-ray intensity ratios.

  16. Effect of film thickness and filler properties on sulphuric acid permeation in various commercially available epoxy mortar coatings.

    Science.gov (United States)

    Valix, M; Mineyama, H; Chen, C; Cheung, W H; Shi, J; Bustamante, H

    2011-01-01

    The performance of various commercially available epoxy mortar coatings was compared by measuring their sulphuric acid diffusivity. Apparent diffusivities, which were measured gravimetrically, were found to be dependent on coating tortuosity. In composite materials like epoxy mortars, the tortuosity was determined by filler properties and polymer alignment. Tortuosity was found to depend on the filler size, their dispersion, filler aspect ratio and concentration. The order and greater alignment of polymer aggregates, which characterises thinner coatings effects higher tortuosity and thus lower permeabilities. The result is that sulphuric acid diffusivities were observed to increase with coating thickness, which challenges the notion that greater coating thicknesses provide greater protection or environmental barrier. The effect of film thickness and filler properties observed in this study has significant implications to the current selection of coatings and sewer protection.

  17. Characterization by Confocal Laser Scanning Microscopy of the Phase Composition at Interfaces in Thick Films of Polymer Blends

    Directory of Open Access Journals (Sweden)

    Sandro Lattante

    2014-01-01

    Full Text Available Confocal Laser Scanning Microscopy (CLSM has been used as a fast, user-friendly, and noninvasive tool for characterizing the phase composition differences at the substrate and air interfaces in thick films of polymer blends. A clearly different phase composition at the blend/glass interface and at the blend/air interface has been detected. We show that PCBM preferentially accumulates at the glass/blend interface, while P3HT preferentially accumulates at the blend/air interface, by comparing the integrated signal intensity of the luminescence coming from both interfaces. Our results demonstrate that CLSM can be used conveniently for the fast identification of a preferential phase segregation at interfaces in polymer blends. This is useful in the research field on devices (like sensors or planar waveguides that are based on very thick layers (thickness higher than 1 μm.

  18. Thin film CdTe solar cells with an absorber layer thickness in micro- and sub-micrometer scale

    Science.gov (United States)

    Bai, Zhizhong; Yang, Jun; Wang, Deliang

    2011-10-01

    CdTe thin film solar cell with an absorber layer as thin as 0.5 μm was fabricated. An efficiency of 7.9% was obtained for a 1-μm-thick CdTe solar cell. An increased intensity of deep recombination states in the band gap, which was responsible for the reduced open-circuit voltage and fill factor for ultra-thin solar cells, was induced due to the not-well-developed polycrystalline CdTe microstructure and the CdS/CdTe heterojunction and the presence of Cu in the back contact. The experimental results presented in this study demonstrated that 1-μm-thick absorber layer is thick enough to fabricate CdTe solar cell with a decent efficiency.

  19. Theoretical investigation of antiferroelectric (SmCA*) subphases by hydrodynamical approach

    Science.gov (United States)

    Lahiri, T.; Pal Majumder, T.

    2011-12-01

    We provide a hydrodynamical approach utilizing time dependent Landau-Ginzburg model (L-G) and the Cahn-Hilliard model (C-H) to investigate antiferroelectric liquid crystals (AFLCs) exhibiting different chiral phases between paraelectric smectic A (SmA*) phase and antiferroelectric smectic CA* phase (SmCA*). Introducing conserved and non-conserved order parameters in C-H and L-G models, we have predicted the appearance of a chiral smectic C (SmC*) phase and a ferrielectric SmCFI1* phase (three layers SmCA*) in an antiferroelectric phase sequence. The three layers periodicity for SmCFI1* phase is studied in detail with a non-uniform layer interactions among smectic layers with strong experimental support. Finally, we provide some theoretical basis for the non-uniformity of our proposed layer interactions.

  20. Perpendicular Magnetic Anisotropy in CoSiB/Pd/CoSiB Trilayer Thin Films with Varying Pd-Layer Thicknesses.

    Science.gov (United States)

    Jung, Sol; Kim, Taewan; Yim, Haein

    2015-11-01

    We investigate the magnetic properties of CoSiB (1 5-Å-thickness)/Pd (Pd thickness = 8, 11, 14, 17, 20, 24, 27, 29 and 33 Å)/CoSiB (15-Å-thickness) trilayer thin films. The CoSiB-layer thickness was fixed to 15 Å, while the Pd-layer thickness was varied from 8-33 Å. In this paper, we present a new type of thin film containing amorphous Co75Si15B10 and Pd. We investigate the magnetic properties of a fabricated CoSiB/Pd/CoSiB trilayer thin film with perpendicular magnetic anisotropy, and determine the correlation between the magnetic properties and the nonmagnetic Pd-layer thickness. With increasing Pd-layer thickness, both the coercivity and the saturation magnetization decreased. Furthermore, the maximum values of the magnetic anisotropy were calculated as 0.3 x 10(6) erg/cc. In order to examine the difference between the in-plane magnetic anisotropy and perpendicular magnetic anisotropy, magnetic force microscopy images of the CoSiB (15-Å-thickness)/Pd (Pd thickness = 8 and 14 Å)/CoSiB (15-Å-thickness) trilayer thin films were obtained.

  1. EFFECT OF THICKNESS ON MICROSTRUCTURE, DIELECTRIC AND OPTICAL PROPERTIES OF SINGLE LAYER Ba0.6Sr0.4TiO3 THIN FILM

    OpenAIRE

    VELUCHAMY ESWARAMOORTHI; RAYAR VICTOR WILLIAMS

    2014-01-01

    Single layered Ba0.6Sr0.4TiO3 (BST) thin films were prepared on stainless steel (304) and quartz substrates by solution method. The microstructure, grain size, surface morphology and thickness of the films were reported on the basis of X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM) and UV-visible spectrometer. Variation in thickness influences the microstructure of the films. The single layered thin film had uniform crack-free surfa...

  2. The spatial thickness distribution of metal films produced by large area pulsed laser deposition

    DEFF Research Database (Denmark)

    Pryds, Nini; Schou, Jørgen; Linderoth, Søren

    2007-01-01

    Thin films of metals have been deposited in the large-area Pulsed Laser Deposition (PLD) Facility at Riso National Laboratory. Thin films of Ag and Ni were deposited with laser pulses from an excimer laser at 248 nm with a rectangular beam spot at a fluence of 10 J/cm(2) on glass substrates of 12...

  3. The jet impact force of laser-induced bubble under the water-film with different thickness

    Science.gov (United States)

    Li, Beibei; Wang, Bingyang; Liu, Xiumei; He, Jie; Lu, Jian

    2015-05-01

    The effect of water-film on the laser-induced bubble was investigated by a piezoelectric ceramic transducer (PZT) sensor. Both of the collapse time and liquid-jet impact force of the bubble under the water-film were obtained, and the experiments were also completed in different laser energy. The collapse time increase with the thickness of the waterfilm, but the liquid-jet impact force decrease. We consider that the collapse time was affected by both of the rigid boundary and surface, and the increasing of the collapse time is the reason the decreasing of the liquid-jet impact force. The velocity of bubble wall is lower with the longer collapse time for the uniform bubbles energy, so the liquid-jet impact force is lower. For the other reasons, more laser energy would be absorbed by the thicker water-film, but the water was also splashed for the thinner water-film. So, for the thinner water-film, the bubble energy is higher, the liquidjet impact force is higher, but the maximal radius is smaller because of the splash process. In the other hand, both of the collapse time and the liquid-jet impact force are increase with the laser energy. These researches are useful for the laser processing under water.

  4. Pyroelectric spectrum in Pb(Zr,Sn,Ti)O3 antiferroelectric- ferroelectric ceramics

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The pyroelectric effect of phase transition induced with temperature in Nb-modified Pb(Zr,Sn,Ti)O3 antiferroelectric-ferroelectric ceramics is studied. Experimental results reveal that the phase transitions are accompanied with marked pyroelectric peaks, there exists the close relation between the type of phase transition and the shape of pyroelectric peak. Because of the variations of phase transition, various pyroelectric spectra result. The pyroelectric spectrum can display the polarization effect and some inferior phase transitions with temperature variations, such as antiferroelectric AFEA-AFEB or ferroelectric FEL-FEH transition, which are not detected by the conventional dielectric measurement.

  5. Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

    Science.gov (United States)

    Zsurzsa, S.; Péter, L.; Kiss, L. F.; Bakonyi, I.

    2017-01-01

    The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (Hc) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation Hc=Hco+a/dn with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers.

  6. Thickness-dependent Electrical and Piezoelectric Properties of Lead-Free Ferroelectric Ba0.8Sr0.2TiO3 Thin Films

    Directory of Open Access Journals (Sweden)

    D.A. Kiselev

    2016-10-01

    Full Text Available The thickness dependent of electrical and piezoelectric properties of lead-free ferroelectric Ba0.8Sr0.2TiO3 thin films is reported. Ba0.8Sr0.2TiO3 (BST 80/20 thin films for various thickness, ranging from 150 nm to 550 nm, were prepared by high-frequency reactive sputtering of a ceramic target in an oxygen atmosphere on p-type Si substrate. Memory windows and effective dielectric constant of the BST film in Au/BST/Si thin film capacitors is found to increase with the increasing thickness of the film. Domain structure, domain switching and hysteresis loops of the BST 80/20 thin film were investigate via the piezoresponse force microscopy. Complete domain switching and strong piezoresponse are found in the ferroelectric BST film. The piezoelectric coefficient ( and the remnant piezoelectric response (ΔPR of BST 80/20 films is found to increase with the thickness of the film.

  7. Synthesis of thick mesoporous gamma-alumina films, loading of Pt nanoparticles, and use of the composite film as a reusable catalyst.

    Science.gov (United States)

    Dandapat, Anirban; Jana, Debrina; De, Goutam

    2009-04-01

    Nanocrystalline mesoporous gamma-Al2O3 film of high thickness has been developed and characterized. The films were prepared on ordinary glass substrates by a single dip-coating method using boehmite (AlOOH) sols derived from aluminum tri-sec-butoxide in presence of cetyltrimethylammonium bromide (CTAB) as structure-directing agent. The dried films were heat-treated at 500 degrees C in air to remove the organics and strengthen the network. The GIXRD of the heat-treated (500 degrees C) film shows a broad peak in the low-angle region supporting the formation of worm-hole-like disordered mesostructures. The high-angle GIXRD, FTIR, and TEM of the films confirm the formation of gamma-Al2O3. N2 adsorption-desorption analyses showed that the heat-treated (500 degrees C) film has a BET surface area of 171 m(2) g(-1) with a pore volume of 0.188 cm(3) g(-1) and mean pore diameter 4.3 nm. Pt nanoparticles (NPs) (approximately 2.7 mol % with respect to the equivalent AlO(1.5)) were generated inside the mesopores of the heat-treated films simply by soaking H2PtCl6 solutions into it, and followed by thermal decomposition at 500 degrees C. The surface area and pore volume of the Pt-incorporated film have been reduced to 101 m(2) g(-1) and 0.119 cm(3) g(-1) respectively, confirming the inclusion of Pt NPs inside the pores. FESEM and TEM studies revealed uniform distribution of Pt NPs (2-8.5 nm; average diameter 4.9 nm) in the films. Catalytic properties of the Pt-incorporated films were investigated in two model (one inorganic and other organic) systems: reduction of hexacyanoferrate(III) ions by thiosulfate to ferrocyanide, and p-nitrophenol to p-aminophenol. In both the cases, the catalyst showed excellent activities, and the reduction reactions followed smoothly, showing isosbestic points in the UV-visible spectra. The catalyst films can be separated easily after the reactions and reused several times.

  8. Potentiometric RuO2-Ta2O5 pH sensors fabricated using thick film and LTCC technologies.

    Science.gov (United States)

    Manjakkal, Libu; Zaraska, Krzysztof; Cvejin, Katarina; Kulawik, Jan; Szwagierczak, Dorota

    2016-01-15

    The paper reports on the preparation, properties and application of potentiometric pH sensors with thick film RuO2-Ta2O5 sensing electrode and Ag/AgCl/KCl reference electrode screen printed on an alumina substrate. Furthermore, it presents fabrication procedure and characterization of a new miniaturized pH sensor on LTCC (low temperature cofired ceramics) substrate, destined for wireless monitoring. The crystal structure, phase and elemental composition, and microstructure of the films were investigated by X-ray diffractometry, Raman spectroscopy, scanning electron microscopy and energy dispersive spectroscopy. Potentiometric characterization was performed in a wide pH range of 2-12 for different storage conditions and pH loops. The advantages of the proposed thick film pH sensors are: (a) low cost and easy fabrication, (b) excellent sensitivity close to the Nernstian response (56mV/pH) in the wide pH range, (c) fast response, (d) long lifetime, (e) good reproducibility, (f) low hysteresis and drift effects, and (g) low cross-sensitivity towards Li(+), Na(+) and K(+) as interfering ions. The applicability of the sensors for pH measurement of river, tap and distilled water, and some drinks was also tested.

  9. In-Situ Composition and Luminescence of Europium and Terbium Coordination Polymers/PEMA Hybrid Thick Films

    Institute of Scientific and Technical Information of China (English)

    YAN Bing; WANG Qianming

    2005-01-01

    Europium and terbium coordination polymers of pyridine- 3-carboxylic acid were in-situ composed with ethyl methacrylate ( EMA ). With the polymerization of EMA monomer and the formation of europium and terbium coordination polymers of pyridine- 3-carboxylic acid, the transparent hybrid thick films composed of [Eu( NIC)3 ]n ( [ Tb( NIC)3 ]n ) and poly ethyl methacrylate ( PEMA ) have been prepared. The luminescence properties and energy transfer of these polymeric composites were studied with absorption spectra, fluorescent excitation and emission spectra in detail. All the hybrid thick films composed of terbium coordination polymer show the characteristic strong green emission of terbium ions, which implies the same energy transfer mechanism as the pure complex and the hybrid composite film is a suitable substrate for the luminescence of terbium ions. In the range of composing concentration of luminescent species (0.01,0.025,0.05,0.1 mmol/15 mL EMA ) , emission intensities increase with the increasing of corresponding composing concentration and the concentration quenching effect does not take place.

  10. Effect of Aging Time and Film Thickness on the Photoelectrochemical Properties of TiO2 Sol-Gel Photoanodes

    Directory of Open Access Journals (Sweden)

    D. Regonini

    2014-01-01

    Full Text Available This work has focused on the investigation of a non-aqueous based sol-gel process to produce TiO2 based photoelectrodes for solar water splitting. In particular, the effect of the aging time of the sol and TiO2 film thickness on the photoelectrochemical properties of the photoanodes has been investigated. In order to achieve optimal performances (i.e., photocurrent density up to 570 µA/cm2 and IPCE of 26% at 300 nm, the sol needs to be aged for 3 to 6 h, before being dip-coated to produce the photoanodes. The importance of the aging time can also be appreciated from the optical properties of the TiO2 films; the absorbance threshold of the sol-gel aged for 3–6 h is slightly shifted towards longer wavelenghts in comparison to 0 h aging. Aging is necessary to build up a well-interconnected sol-gel network which finally leads to a photoelectrode with optimized light absorption and electron collection properties. This is also confirmed by the higher IPCE signal of aged photoelectrodes, especially below 340 nm. Among thicknesses considered, there is no apparent significant difference in the photoresponse (photocurrent density and IPCE of the TiO2 sol-gel films.

  11. Effect of the Pd-Au thin film thickness uniformity on the performance of an optical fiber hydrogen sensor

    Energy Technology Data Exchange (ETDEWEB)

    Luna-Moreno, Donato [Centro de Investigaciones en Optica A. C., Loma del Bosque 115, Leon GTO, 37150 (Mexico)]. E-mail: dluna@cio.mx; Monzon-Hernandez, David [Centro de Investigaciones en Optica A. C., Loma del Bosque 115, Leon GTO, 37150 (Mexico)

    2007-08-31

    Thin alloy film of Pd and Au, formed by simultaneous electron-beam and thermal evaporation techniques, respectively, is used in the design of an optical fiber hydrogen sensor. The sensor consists of a multimode fiber (MMF) in which a short section of single mode fiber (SMF), coated with the Pd-Au thin film, is inserted. Due to core diameter mismatch, the SMF cladding guides light, allowing the interaction between the sensing layer and the guided light. When the sensor is exposed to hydrogen, the Pd-Au layer refractive index diminishes and causes attenuation changes on the transmitted light. Several samples with different layer thickness uniformity were fabricated and tested in a very simple experimental set-up. We have observed that the sensor signal change is dependant on layer thickness uniformity, since the effective interaction length between the evanescent field and the sensing layer is increased. By contrast, such uniformity practically has no influence on the time response of the sensor. The resulting Pd-Au film can detect 4% hydrogen with a response time of 15 s.

  12. Synthesis and Characterization of Screen Printed Zn0.97Cu0.03O Thick Film for Semiconductor Device Applications

    Directory of Open Access Journals (Sweden)

    Rayees Ahmad Zargar

    2014-01-01

    Full Text Available The studies on doped ZnO thick films deposited over large surface area are still a very promising area of research and development. We report characteristic properties of thick film of Zn0.97Cu0.03O prepared by the economic screen printing technique. The film was characterized by XRD, SEM, diffused reflectance, FTIR, and dark resistivity measurement techniques. The XRD and SEM studies revealed polycrystalline, single phase, porous, and granular surface morphology of this Cu doped ZnO thick films. The direct band gap energy of this film determined by diffuse reflectance technique is 3.18 eV. IR transmission spectrum measured in 4000–600 cm−1 region at ambient temperature confirmed the incorporation of Cu2+ ions in ZnO lattice. The DC resistivity measurements reveal semiconducting nature of the sample with activation energy of 0.66 eV.

  13. Thickness-dependent transport channels in topological insulator Bi2Se3 thin films grown by magnetron sputtering.

    Science.gov (United States)

    Wang, Wen Jie; Gao, Kuang Hong; Li, Zhi Qing

    2016-05-04

    We study the low-temperature transport properties of Bi2Se3 thin films grown by magnetron sputtering. A positive magnetoresistance resulting from the weak antilocalization (WAL) effect is observed at low temperatures. The observed WAL effect is two dimensional in nature. Applying the Hikami-Larkin-Nagaoka theory, we have obtained the dephasing length. It is found that the temperature dependence of the dephasing length cannot be described only by the Nyquist electron-electron dephasing, in conflict with prevailing experimental results. From the WAL effect, we extract the number of the transport channels, which is found to increase with increasing the thickness of the films, reflecting the thickness-dependent coupling between the top and bottom surface states in topological insulator. On the other hand, the electron-electron interaction (EEI) effect is observed in temperature-dependent conductivity. From the EEI effect, we also extract the number of the transport channel, which shows similar thickness dependence with that obtained from the analysis of the WAL effect. The EEI effect, therefore, can be used to analyze the coupling effect between the top and bottom surface states in topological insulator like the WAL effect.

  14. Thickness-dependent transport channels in topological insulator Bi2Se3 thin films grown by magnetron sputtering

    Science.gov (United States)

    Wang, Wen Jie; Gao, Kuang Hong; Li, Zhi Qing

    2016-05-01

    We study the low-temperature transport properties of Bi2Se3 thin films grown by magnetron sputtering. A positive magnetoresistance resulting from the weak antilocalization (WAL) effect is observed at low temperatures. The observed WAL effect is two dimensional in nature. Applying the Hikami-Larkin-Nagaoka theory, we have obtained the dephasing length. It is found that the temperature dependence of the dephasing length cannot be described only by the Nyquist electron-electron dephasing, in conflict with prevailing experimental results. From the WAL effect, we extract the number of the transport channels, which is found to increase with increasing the thickness of the films, reflecting the thickness-dependent coupling between the top and bottom surface states in topological insulator. On the other hand, the electron-electron interaction (EEI) effect is observed in temperature-dependent conductivity. From the EEI effect, we also extract the number of the transport channel, which shows similar thickness dependence with that obtained from the analysis of the WAL effect. The EEI effect, therefore, can be used to analyze the coupling effect between the top and bottom surface states in topological insulator like the WAL effect.

  15. Analytical Solutions of Heat Transfer and Film Thickness with Slip Condition Effect in Thin-Film Evaporation for Two-Phase Flow in Microchannel

    Directory of Open Access Journals (Sweden)

    Ahmed Jassim Shkarah

    2015-01-01

    Full Text Available Physical and mathematical model has been developed to predict the two-phase flow and heat transfer in a microchannel with evaporative heat transfer. Sample solutions to the model were obtained for both analytical analysis and numerical analysis. It is assumed that the capillary pressure is neglected (Morris, 2003. Results are provided for liquid film thickness, total heat flux, and evaporating heat flux distribution. In addition to the sample calculations that were used to illustrate the transport characteristics, computations based on the current model were performed to generate results for comparisons with the analytical results of Wang et al. (2008 and Wayner Jr. et al. (1976. The calculated results from the current model match closely with those of analytical results of Wang et al. (2008 and Wayner Jr. et al. (1976. This work will lead to a better understanding of heat transfer and fluid flow occurring in the evaporating film region and develop an analytical equation for evaporating liquid film thickness.

  16. 功能性层层组装厚膜%Layer-by-Layer Assembled Functional Thick Films

    Institute of Scientific and Technical Information of China (English)

    孙俊奇

    2011-01-01

    The layer-by-layer (LbL) assembly, which involves alternate deposition of species with complementary groups, has been demonstrated to be a convenient and versatile method to fabricate functional film materials with precise control of the chemical composition and structure. The LbL assembly is usually employed as a method for uhrathin film fabrication. Compared with uhrathin films, the LbL assembled films with micrometer-thickness have the irreplaceable ad- vantages of high loading capacity, enhanced mechanical robustness, convenience in tailoring micro- and nanosealed hierar- chical structures and integrating multiple functions into one film. We demonstrate herein that building blocks with large di- mensions, including polymeric complexes, large-sized inorganic particles and particle aggregates, can be LbL assembled to rapidly fabricate micrometer-thick composite films. Composite films with high loading capacity, self-healing ability, ca- pable of controlling cell adhesion and integrating multiple functions and so forth were rapidly fabricated by LbL assembly of building blocks of large dimensions. Furthermore, the LbL assembled thick films can be exfoliated from substrates to pro- duce highly stable free-standing films, which enrich largely the functionalities of the LbL assembled films.%层层组装是一种基于物质交替沉积而制备复合膜的方法,可以实现膜的结构和组成的精确调控。层层组装通常被认为是超薄膜的构筑方法。与超薄膜相比,微米或亚微米的厚膜更容易实现高的负载、微纳复合结构的调控、多功能集成以及赋予膜更高的稳定性。以作者的研究结果为基础,阐明TN用大尺度的构筑基元,包括聚合物复合物、大尺度的无机粒子以及聚集的粒子,可以方便地实现微米厚度的层层组装膜的快速构筑。以快速构筑的厚膜为功能载体,实现了层层组装膜的自修复、高负载、细胞可控粘附及多功能

  17. The dependence of the polycrystalline structure and electroluminescent properties of ZnS:Mn deposited on Y 2O 3 films on thickness

    Science.gov (United States)

    Nakanishi, Y.; Fukuda, Y.; Hatanaka, Y.; Shimaoka, G.

    1991-06-01

    The dependence of polycrystalline structure and electroluminescent (EL) properties of ZnS:Mn on the thickness of ZnS:Mn thin films deposited on Y 2O 3 films at 200°C by electron-beam evaporation has been investigated. RHEED experiments showed that the Y 2O 3 film deposited on a transparent electrode at 200°C had a fiber structure with [100] orientation. It was found from RHEED observation that ZnS:Mn films with thickness below about 500Ådeposited over the Y 2O 3 film had a zincblende structure which changed to a fiber structure with [111] orientation as the film thickness increased. The brightness and the efficiency of ZnS:Mn thin film EL devices with a thickness below about 1000Åwere lower than those of EL devices with a thickness above 1000Å. These effects are attributed to a very poor crystallinity in the transition region from [100] to [111] orientation during the early stages of growth.

  18. Structural, magnetic and microwave properties of barium hexaferrite thick films with different Fe/Ba mole ratio

    Energy Technology Data Exchange (ETDEWEB)

    Verma, Samiksha [School of Physics and Materials Science, Thapar University, Patiala 147004 (India); Dhawan, S.K. [Polymeric & Soft Materials Section, National Physical laboratory, New Delhi 119912 (India); Paesano, Andrea [Departamento de Fisica, Universidade Estadual de Maringá, Av. Colombo 5790, Maringá (Brazil); Pandey, O.P. [School of Physics and Materials Science, Thapar University, Patiala 147004 (India); Sharma, Puneet, E-mail: puneet.sharma@thapar.edu [School of Physics and Materials Science, Thapar University, Patiala 147004 (India)

    2015-12-15

    Barium hexaferrite (BaFe{sub 12}O{sub 19}) thick films (∼60 µm) with different BaO·xFe{sub 2}O{sub 3} mole ratio (x=5.0–6.0) were prepared by screen printing method. X-ray diffraction analysis confirmed the formation of single phase BaFe{sub 12}O{sub 19} (BaM). Preferential site occupation of Fe{sup 3+} ion at five different crystallographic sites, with varied mole ratio was measured by Mössbauer spectroscopy. Vacancy fraction found to be higher at 4f{sub 1}, 4f{sub 2} and 2b sites for mole ratio 5.5 and 5.0 respectively. Magnetic measurement shows that the magnetization (M) and magnetocrystalline anisotropy field (H{sub a}) depends upon mole ratio. M and H{sub a} are found to be maximum for mole ratio 5.5, while the coercivity (H{sub c}) remains constant. Reflection losses (R{sub L}) in the frequency range of 12–18 GHz were also studied. Present investigation demonstrates the effect of mole ratio on structural, magnetic and microwave absorption properties of BaM thick films for microwave device applications. - Highlights: • Single phase BaM thick films with different Fe/Ba mole ratio are prepared. • Site preference of Fe ion is estimated by Mössbauer spectroscopy. • Magnetization and magnetocrystalline ansisotropy is found maximum for 5.5 mole ratio. • Absorption frequency found to vary with the mole ratio.

  19. Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas

    Science.gov (United States)

    Zhao, Yan; Gao, Wei; Xu, Bo; Li, Ying-Ai; Li, Hong-Dong; Gu, Guang-Rui; Yin, Hong

    2016-10-01

    The excellent physical and chemical properties of cubic boron nitride (c-BN) film make it a promising candidate for various industry applications. However, the c-BN film thickness restricts its practical applications in many cases. Thus, it is indispensable to develop an economic, simple and environment-friend way to synthesize high-quality thick, stable c-BN films. High-cubic-content BN films are prepared on silicon (100) substrates by radio frequency (RF) magnetron sputtering from an h-BN target at low substrate temperature. Adhesions of the c-BN films are greatly improved by adding hydrogen to the argon/nitrogen gas mixture, allowing the deposition of a film up to 5-μm thick. The compositions and the microstructure morphologies of the c-BN films grown at different substrate temperatures are systematically investigated with respect to the ratio of H2 gas content to total working gas. In addition, a primary mechanism for the deposition of thick c-BN film is proposed. Project supported by the National Natural Science Foundation of China (Grant Nos. 51572105, 61504046, and 51272224), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China, the Development and Reform Commission of Jilin Province, China (Grant No. 2015Y050), and the Scientific Research Foundation for the Returned Overseas of Jilin Province, China.

  20. Thickness dependence of the conductivity of thin films (La,Sr)FeO3 deposited on MgO single crystal

    DEFF Research Database (Denmark)

    Mosleh, Majid; Pryds, Nini; Hendriksen, Peter Vang

    2007-01-01

    Thin films of La0.6Sr0.4FeO3-delta of different thicknesses have been deposited on single crystal MgO substrate by pulsed laser deposition (PLD). The deposited films are characterized by XRD before and after annealing, by scanning electron microscopy (SEM) for morphological characterization...