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Sample records for anomalous hall effect

  1. Anomalous Hall effect

    Czech Academy of Sciences Publication Activity Database

    Nagaosa, N.; Sinova, Jairo; Onoda, S.; MacDonald, A. H.; Ong, N. P.

    2010-01-01

    Roč. 82, č. 2 (2010), s. 1539-1592 ISSN 0034-6861 Institutional research plan: CEZ:AV0Z10100521 Keywords : anomalous Hall effect * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 51.695, year: 2010

  2. Anomalous Hall effect

    Science.gov (United States)

    Nagaosa, Naoto; Sinova, Jairo; Onoda, Shigeki; MacDonald, A. H.; Ong, N. P.

    2010-04-01

    The anomalous Hall effect (AHE) occurs in solids with broken time-reversal symmetry, typically in a ferromagnetic phase, as a consequence of spin-orbit coupling. Experimental and theoretical studies of the AHE are reviewed, focusing on recent developments that have provided a more complete framework for understanding this subtle phenomenon and have, in many instances, replaced controversy by clarity. Synergy between experimental and theoretical works, both playing a crucial role, has been at the heart of these advances. On the theoretical front, the adoption of the Berry-phase concepts has established a link between the AHE and the topological nature of the Hall currents. On the experimental front, new experimental studies of the AHE in transition metals, transition-metal oxides, spinels, pyrochlores, and metallic dilute magnetic semiconductors have established systematic trends. These two developments, in concert with first-principles electronic structure calculations, strongly favor the dominance of an intrinsic Berry-phase-related AHE mechanism in metallic ferromagnets with moderate conductivity. The intrinsic AHE can be expressed in terms of the Berry-phase curvatures and it is therefore an intrinsic quantum-mechanical property of a perfect crystal. An extrinsic mechanism, skew scattering from disorder, tends to dominate the AHE in highly conductive ferromagnets. The full modern semiclassical treatment of the AHE is reviewed which incorporates an anomalous contribution to wave-packet group velocity due to momentum-space Berry curvatures and correctly combines the roles of intrinsic and extrinsic (skew-scattering and side-jump) scattering-related mechanisms. In addition, more rigorous quantum-mechanical treatments based on the Kubo and Keldysh formalisms are reviewed, taking into account multiband effects, and demonstrate the equivalence of all three linear response theories in the metallic regime. Building on results from recent experiment and theory, a

  3. Anomalous Hall effect in polycrystalline Ni films

    KAUST Repository

    Guo, Zaibing

    2012-02-01

    We systematically studied the anomalous Hall effect in a series of polycrystalline Ni films with thickness ranging from 4 to 200 nm. It is found that both the longitudinal and anomalous Hall resistivity increased greatly as film thickness decreased. This enhancement should be related to the surface scattering. In the ultrathin films (46 nm thick), weak localization corrections to anomalous Hall conductivity were studied. The granular model, taking into account the dominated intergranular tunneling, has been employed to explain this phenomenon, which can explain the weak dependence of anomalous Hall resistivity on longitudinal resistivity as well. © 2011 Elsevier Ltd. All rights reserved.

  4. Tunneling Anomalous and Spin Hall Effects.

    Science.gov (United States)

    Matos-Abiague, A; Fabian, J

    2015-07-31

    We predict, theoretically, the existence of the anomalous Hall effect when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic. The interfacial spin-orbit coupling present in the barrier region induces a spin-dependent momentum filtering in the directions perpendicular to the tunneling current, resulting in a skew tunneling even in the absence of impurities. This produces an anomalous Hall conductance and spin Hall currents in the nonmagnetic electrode when a bias voltage is applied across the tunneling heterojunction. If the barrier is composed of a noncentrosymmetric material, the anomalous Hall conductance and spin Hall currents become anisotropic with respect to both the magnetization and crystallographic directions, allowing us to separate this interfacial phenomenon from the bulk anomalous and spin Hall contributions. The proposed effect should be useful for proving and quantifying the interfacial spin-orbit fields in metallic and metal-semiconductor systems.

  5. Intrinsic anomalous Hall effect and local polarizabilities

    Czech Academy of Sciences Publication Activity Database

    Středa, Pavel; Jonckheere, T.

    2010-01-01

    Roč. 82, č. 11 (2010), 113303/1-113303/4 ISSN 1098-0121 R&D Projects: GA ČR GA202/08/0551 Institutional research plan: CEZ:AV0Z10100521 Keywords : orbital polarization momentum * Berry phase correction * anomalous Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.772, year: 2010

  6. Anomalous Hall effect in disordered multiband metals

    Czech Academy of Sciences Publication Activity Database

    Kovalev, A.A.; Sinova, Jairo; Tserkovnyak, Y.

    2010-01-01

    Roč. 105, č. 3 (2010), 036601/1-036601/4 ISSN 0031-9007 Institutional research plan: CEZ:AV0Z10100521 Keywords : anomalous Hall effect * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.621, year: 2010

  7. Anomalous Hall effect and Nernst effect in itinerant ferromagnets

    International Nuclear Information System (INIS)

    Miyasato, T.; Abe, N.; Fujii, T.; Asamitsu, A.; Onose, Y.; Onoda, S.; Nagaosa, N.; Tokura, Y.

    2007-01-01

    Anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) in many ferromagnetic metals including pure metals, oxides, and chalcogenides, are studied to obtain unified understandings of their origins. We show the universal behavior of anomalous Hall conductivity σ xy as a function of longitudinal conductivity σ xx over six orders of magnitude, which is well reproduced by a recent theory assuming both the intrinsic and extrinsic contributions to the AHE. ANE is closely related with AHE and gives us further information about the electronic state in the ground state of ferromagnets. The temperature dependence of transverse Peltier coefficient α xy shows almost similar behavior among various ferromagnets, and this behavior is expected from a conventional Boltzmann transport theory

  8. Anomalous Hall effect and Nernst effect in itinerant ferromagnets

    International Nuclear Information System (INIS)

    Asamitsu, A.; Miyasato, T.; Abe, N.; Fujii, T.; Onose, Y.; Onoda, S.; Nagaosa, N.; Tokura, Y.

    2007-01-01

    Anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) in many ferromagnetic metals including pure metals, oxides, and calcogenides, are studied to obtain unified understandings of their origins. We show the universal behavior of anomalous Hall conductivity σ xy as a function of longitudinal conductivity σ xx over six orders of magnitude, which is well reproduced by rigorous unified theory assuming both intrinsic and extrinsic contributions to the AHE. ANE is closely related with AHE and gives us further information about the electronic state in the ground state of ferromagnets. The temperature dependence of transverse Peltier coefficient α xy shows almost similar behavior among various ferromagnets and this behavior is expected from a conventional Boltzmann transport theory

  9. Observation of the anomalous Hall effect in GaAs

    International Nuclear Information System (INIS)

    Miah, M Idrish

    2007-01-01

    Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect

  10. Observation of the anomalous Hall effect in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M Idrish [Nanoscale Science and Technology Centre, School of Science, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong - 4331 (Bangladesh)

    2007-03-21

    Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect.

  11. Scattering Effect on Anomalous Hall Effect in Ferromagnetic Transition Metals

    KAUST Repository

    Zhang, Qiang

    2017-11-30

    The anomalous Hall effect (AHE) has been discovered for over a century, but its origin is still highly controversial theoretically and experimentally. In this study, we investigated the scattering effect on the AHE for both exploring the underlying physics and technical applications. We prepared Cox(MgO)100-x granular thin films with different Co volume fraction (34≤≤100) and studied the interfacial scattering effect on the AHE. The STEM HAADF images confirmed the inhomogeneous granular structure of the samples. As decreases from 100 to 34, the values of longitudinal resistivity () and anomalous Hall resistivity (AHE) respectively increase by about four and three orders in magnitude. The linear scaling relation between the anomalous Hall coefficient () and the measured at 5 K holds in both the as-prepared and annealed samples, which suggests a skew scattering dominated mechanism in Cox(MgO)100-x granular thin films. We prepared (Fe36//Au12/), (Ni36//Au12/) and (Ta12//Fe36/) multilayers to study the interfacial scattering effect on the AHE. The multilayer structures were characterized by the XRR spectra and TEM images of cross-sections. For the three serials of multilayers, both the and AHE increase with , which clearly shows interfacial scattering effect. The intrinsic contribution decreases with increases in the three serials of samples, which may be due to the crystallinity decaying or the finite size effect. In the (Fe36//Au12/) samples, the side-jump contribution increases with , which suggests an interfacial scattering-enhanced side jump. In the (Ni36//Au12/) samples, the side-jump contribution decreases with increases, which could be explained by the opposite sign of the interfacial scattering and grain boundary scattering contributed side jump. In the (Ta12//Fe36/) multilayers, the side-jump contribution changed from negative to positive, which is also because of the opposite sign of the interfacial scattering and grain boundary scattering

  12. Anomalous Hall-like effect probe of antiferromagnetic domain wall.

    Science.gov (United States)

    Lang, Lili; Qiu, Xuepeng; Zhou, Shiming

    2018-01-10

    Of crucial importance to antiferromagnetic (AF) spintronic devices, AF domain wall (AFDW), created in exchange biased Y 3 Fe 5 O 12 /Ni 0.50 Co 0.50 O (NiCoO)/Pt, is characterized by anomalous Hall-like effect through magnetic proximity effect and spin Hall magnetoresistance at NiCoO/Pt interface. The AFDW thickness, in the order of nanometers, has been for the first time proved in experiments to increase with increasing temperature. AF spins within AFDW show the same chirality in decent and ascent branches of ferromagnetic magnetization reversal process. Moreover, the uncompensated magnetic moment at the NiCoO/Pt interface is of perpendicular magnetization anisotropy and changes linearly in magnitude with temperature due to the reduced coordination of the magnetic atoms on the AF surface. This work will help to clarify the mechanism of the spin current propagation in AF materials and fully understand the physics behind exchange bias.

  13. Precise quantization of anomalous Hall effect near zero magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Bestwick, A. J. [Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States); Fox, E. J. [Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States); Kou, Xufeng [Univ. of California, Los Angeles, CA (United States); Pan, Lei [Univ. of California, Los Angeles, CA (United States); Wang, Kang L. [Univ. of California, Los Angeles, CA (United States); Goldhaber-Gordon, D. [Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-05-04

    In this study, we report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in the Hall resistance to within a part per 10,000 and a longitudinal resistivity under 1 Ω per square, with chiral edge transport explicitly confirmed by nonlocal measurements. Deviations from this behavior are found to be caused by thermally activated carriers, as indicated by an Arrhenius law temperature dependence. Using the deviations as a thermometer, we demonstrate an unexpected magnetocaloric effect and use it to reach near-perfect quantization by cooling the sample below the dilution refrigerator base temperature in a process approximating adiabatic demagnetization refrigeration.

  14. Anomalous Hall effect scaling in ferromagnetic thin films

    KAUST Repository

    Grigoryan, Vahram L.

    2017-10-23

    We propose a scaling law for anomalous Hall effect in ferromagnetic thin films. Our approach distinguishes multiple scattering sources, namely, bulk impurity, phonon for Hall resistivity, and most importantly the rough surface contribution to longitudinal resistivity. In stark contrast to earlier laws that rely on temperature- and thickness-dependent fitting coefficients, this scaling law fits the recent experimental data excellently with constant parameters that are independent of temperature and film thickness, strongly indicating that this law captures the underlying physical processes. Based on a few data points, this scaling law can even fit all experimental data in full temperature and thickness range. We apply this law to interpret the experimental data for Fe, Co, and Ni and conclude that (i) the phonon-induced skew scattering is unimportant as expected; (ii) contribution from the impurity-induced skew scattering is negative; (iii) the intrinsic (extrinsic) mechanism dominates in Fe (Co), and both the extrinsic and intrinsic contributions are important in Ni.

  15. Effects of surface and interface scattering on anomalous Hall effect in Co/Pd multilayers

    KAUST Repository

    Guo, Zaibing

    2012-09-27

    In this paper, we report the results of surface and interface scattering on anomalous Hall effect in Co/Pd multilayers with perpendicular magnetic anisotropy. The surface scattering effect has been extracted from the total anomalous Hall effect. By scaling surface scattering contribution with ρAHs∼ργss, the exponent γ has been found to decrease with the increase of surface scattering resistivity, which could account for the thickness-dependent anomalous Hall effect. Interface diffusion induced by rapid thermal annealing modifies not only the magnetization and longitudinal resistivity but also the anomalous Hall effect; a large exponent γ ∼ 5.7 has been attributed to interface scattering-dominated anomalous Hall effect.

  16. Anomalous Hall effect in Fe/Au multilayers

    KAUST Repository

    Zhang, Q.

    2016-07-22

    To understand the interfacial scattering effect on the anomalous Hall effect (AHE), we prepared multilayers of (Fe(36/n)nm/Au(12/n)nm)n using an e-beam evaporator. This structure design allowed us to investigate the effect of interfacial scattering on the AHE, while keeping the samples\\' thickness and composition unchanged. We measured the (magneto)transport properties of the samples in a wide temperature range (10–310 K) with magnetic fields up to 50 kOe. We found that the scaling between the anomalous Hall resistivity (ρAHE) and longitudinal resistivity (ρxx) can be roughly described by ρAHE∼ργxx with γ=2.65±0.10 and 1.90 ± 0.04 for samples from n=1 to n=4 and samples from n=4 to n=12, respectively. Our quantitative analysis results showed that the interfacial scattering suppresses the contribution of the intrinsic mechanism and gives rise to a side-jump contribution.

  17. Spin chirality induced skew scattering and anomalous Hall effect in chiral magnets.

    Science.gov (United States)

    Ishizuka, Hiroaki; Nagaosa, Naoto

    2018-02-01

    Noncoplanar magnetic orders in magnetic metals give rise to an anomalous Hall effect of unconventional origin, which, by the spin Berry phase effect, is known as the topological Hall effect. This effect is pronounced in the low-temperature limit, where the fluctuation of spins is suppressed. In contrast, we here discuss that the fluctuating but locally correlated spins close to the phase boundary give rise to another anomalous Hall effect, that with the opposite sign to the topological Hall effect. Using the Born approximation, we show that the anomalous Hall effect is attributed to the skew scattering induced by the local correlation of spins. The relation of the scalar spin chirality to the skew scattering amplitude is given, and the explicit formula for the Hall conductivity is derived using a semiclassical Boltzmann transport theory. Our theory potentially accounts for the sign change of the anomalous Hall effect observed in chiral magnets in the vicinity of the phase boundary.

  18. Anomalous Hall effect in Fe/Gd bilayers

    KAUST Repository

    Xu, W. J.

    2010-04-01

    Non-monotonic dependence of anomalous Hall resistivity on temperature and magnetization, including a sign change, was observed in Fe/Gd bilayers. To understand the intriguing observations, we fabricated the Fe/Gd bilayers and single layers of Fe and Gd simultaneously. The temperature and field dependences of longitudinal resistivity, Hall resistivity and magnetization in these films have also been carefully measured. The analysis of these data reveals that these intriguing features are due to the opposite signs of Hall resistivity/or spin polarization and different Curie temperatures of Fe and Gd single-layer films. Copyright (C) EPLA, 2010

  19. Spin disorder effect in anomalous Hall effect in MnGa

    Science.gov (United States)

    Mendonça, A. P. A.; Varalda, J.; Schreiner, W. H.; Mosca, D. H.

    2017-12-01

    We report on resistivity and Hall effect in MnGa thin films grown by molecular beam epitaxy on GaAs substrates. Highly (1 1 1)-textured MnGa film with L10 structure exhibits hard magnetic properties with coercivities as high as 20 kOe and spin disorder mechanisms contributing to the Hall conductivity at room temperature. Density functional theory calculations were performed to determine the intrinsic Berry curvature in the momentum space with chiral spin structure that results in an anomalous Hall conductivity of 127 (Ωcm)-1 comparable to that measured at low temperature. In addition to residual and side-jump contributions, which are enhanced by thermal activation, both anomalous Hall conductivity and Hall angle increase between 100 K and room temperature. The present results reinforce the potential of Mn-Ga system for developing Hall effect-based spintronic devices.

  20. Unconventional scaling of the anomalous Hall effect accompanying electron localization correction in the dirty regime

    KAUST Repository

    Lu, Y. M.

    2013-03-05

    Scaling of the anomalous Hall conductivity to longitudinal conductivity σAH∝σ2xx has been observed in the dirty regime of two-dimensional weak and strong localization regions in ultrathin, polycrystalline, chemically disordered, ferromagnetic FePt films. The relationship between electron transport and temperature reveals a quantitatively insignificant Coulomb interaction in these films, while the temperature dependent anomalous Hall conductivity experiences quantum correction from electron localization. At the onset of this correction, the low-temperature anomalous Hall resistivity begins to be saturated when the thickness of the FePt film is reduced, and the corresponding Hall conductivity scaling exponent becomes 2, which is above the recent unified theory of 1.6 (σAH∝σ1.6xx). Our results strongly suggest that the correction of the electron localization modulates the scaling exponent of the anomalous Hall effect.

  1. Large anomalous Hall effect in a non-collinear antiferromagnet at room temperature

    Science.gov (United States)

    Nakatsuji, Satoru; Kiyohara, Naoki; Higo, Tomoya

    2015-11-01

    In ferromagnetic conductors, an electric current may induce a transverse voltage drop in zero applied magnetic field: this anomalous Hall effect is observed to be proportional to magnetization, and thus is not usually seen in antiferromagnets in zero field. Recent developments in theory and experiment have provided a framework for understanding the anomalous Hall effect using Berry-phase concepts, and this perspective has led to predictions that, under certain conditions, a large anomalous Hall effect may appear in spin liquids and antiferromagnets without net spin magnetization. Although such a spontaneous Hall effect has now been observed in a spin liquid state, a zero-field anomalous Hall effect has hitherto not been reported for antiferromagnets. Here we report empirical evidence for a large anomalous Hall effect in an antiferromagnet that has vanishingly small magnetization. In particular, we find that Mn3Sn, an antiferromagnet that has a non-collinear 120-degree spin order, exhibits a large anomalous Hall conductivity of around 20 per ohm per centimetre at room temperature and more than 100 per ohm per centimetre at low temperatures, reaching the same order of magnitude as in ferromagnetic metals. Notably, the chiral antiferromagnetic state has a very weak and soft ferromagnetic moment of about 0.002 Bohr magnetons per Mn atom (refs 10, 12), allowing us to switch the sign of the Hall effect with a small magnetic field of around a few hundred oersted. This soft response of the large anomalous Hall effect could be useful for various applications including spintronics—for example, to develop a memory device that produces almost no perturbing stray fields.

  2. Theory of anomalous Hall effect in europium chalcogenides

    International Nuclear Information System (INIS)

    Sinkkonen, J.

    1976-04-01

    Considering the exchange interaction between the conduction electrons in a broad 5d-type band and the magnetic electrons in the localized 4f-shells, it is shown that in addition to the ordinary d-f exchange diagonal in band index, there is also a non-diagonal interaction representing a one particle transfer between the conduction and magnetic electrons. Including the spin-orbit coupling, an effective Hamiltonian for the conductionelectrons is obtained, which contains additional asymmetric scattering terms. The ordinary d-f exchange is treated as the dominating scattering interaction. The anomatous Hall effect results by skew scattering and side jump mechanisms. The density matrix method is used to derive the transport properties. The effect of the correlation of spins at different lattice sites is discussed. The model indicates that the anomatous Hall effect can be seen in heavily doped samples. (author)

  3. Anomalous Hall effect from vortex motion in high-Tc superconductors

    International Nuclear Information System (INIS)

    Chen, J.L.; Yang, T.J.

    1994-01-01

    In this work, the unusual Seebeck effect is taken into consideration in explaining the possible origin of the anomalous Hall effect for high-T c superconductors. Combining Maki's theory of transport entropy and Tinkham's theory of resistive transition, we explain why the anomalous Hall effect can be observed in high-T c superconductors, but is absent in most conventional superconductors. The behavior of ρ xy (H,T) in our theory is qualitatively consistent with experiments. In addition, our theory not only predicts that ρ xy will become positive from ρ xy xy |∝ρ xx 2 in the region of ρ xy xy will diminish with increasing defect concentration

  4. Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

    Science.gov (United States)

    Tong, Wen-Yi; Duan, Chun-Gang

    2017-08-01

    In analogy to all-electric spintronics, all-electric valleytronics, i.e., valley manipulation via electric means, becomes an exciting new frontier as it may bring revolutions in the field of data storage with ultra-high speed and ultra-low power consumption. The existence of the anomalous valley Hall effect in ferrovalley materials demonstrates the possibility of electrical detection for valley polarization. However, in previously proposed valley-polarized monolayers, the anomalous valley Hall effect is controlled by external magnetic fields. Here, through elaborate structural design, we propose the antiferrovally bilayer as an ideal candidate for realizing all-electric valleytronic devices. Using the minimal k.p model, we show that the energy degeneracy between valley indexes in such system can be lifted by electric approaches. Subsequently, the anomalous valley Hall effect strongly depends on the electric field as well. Taking the bilayer VSe2 as an example, all-electric tuning and detecting of anomalous valley Hall effect is confirmed by density-functional theory calculations, indicating that the valley information in such antiferrovalley bilayer can be reversed by an electric field perpendicular to the plane of the system and easily probed through the sign of the Hall voltage.

  5. Scaling of anomalous hall effect in amorphous CoFeB Films with accompanying quantum correction

    KAUST Repository

    Zhang, Yan

    2015-05-08

    Scaling of anomalous Hall effect in amorphous CoFeB films with thickness ranging from 2 to 160 nm have been investigated. We have found that the scaling relationship between longitudinal (ρxx) and anomalous Hall (ρAH) resistivity is distinctly different in the Bloch and localization regions. For ultrathin CoFeB films, the sheet resistance (Rxx) and anomalous Hall conductance (GAH) received quantum correction from electron localization showing two different scaling relationships at different temperature regions. In contrast, the thicker films show a metallic conductance, which have only one scaling relationship in the entire temperature range. Furthermore, in the dirty regime of localization regions, an unconventional scaling relationship View the MathML sourceσAH∝σxxα with α=1.99 is found, rather than α=1.60 predicted by the unified theory.

  6. ION ACOUSTIC TURBULENCE, ANOMALOUS TRANSPORT, AND SYSTEM DYNAMICS IN HALL EFFECT THRUSTERS

    Science.gov (United States)

    2017-06-30

    NUMBER (Include area code) 30 June 2017 Briefing Charts 26 May 2017 - 30 June 2017 ION ACOUSTIC TURBULENCE, ANOMALOUS TRANSPORT , AND SYSTEM DYNAMICS...Robert Martin N/A ION ACOUSTIC TURBULENCE, ANOMALOUS TRANSPORT , AND SYSTEM DYNAMICS IN HALL EFFECT THRUSTERS Robert Martin1, Jonathan Tran2 1AIR FORCE...Approved for Public Release; Distribution is Unlimited. PA# 17394 1 / 13 OUTLINE 1 INTRODUCTION 2 TRANSPORT 3 DYNAMIC SYSTEM 4 SUMMARY AND CONCLUSION

  7. The effect of interfacial intermixing on magnetization and anomalous Hall effect in Co/Pd multilayers

    KAUST Repository

    Guo, Zaibing

    2015-05-01

    The effect of interfacial intermixing on magnetization and anomalous Hall effect (AHE) in Co/Pd multilayers is studied by using rapid thermal annealing to enhance the interfacial diffusion. The dependence of saturation magnetization and coercivity on the temperature of rapid thermal annealing at 5 K is discussed. It is found that AHE is closely related to the relative thickness of the Co and Pd layers. Localized paramagnetism has been observed which destroys AHE, while AHE can be enhanced by annealing.

  8. Anomalous Hall effect as the response of the orbital momentum to the gradient of electrochemical potential

    Czech Academy of Sciences Publication Activity Database

    Středa, Pavel

    2013-01-01

    Roč. 88, č. 13 (2013), "134422-1"-"134422-5" ISSN 1098-0121 R&D Projects: GA ČR(CZ) GAP204/11/1228 Institutional support: RVO:68378271 Keywords : anomalous Hall effect * ferromagnetic systems * orbital momentum Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.664, year: 2013

  9. Enhancement of perpendicular magnetic anisotropy and anomalous hall effect in Co/Ni multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Yiwei; Zhang, Jingyan, E-mail: jyzhang@ustb.edu.cn; Jiang, Shaolong; Liu, Qianqian; Li, Xujing; Yu, Guanghua, E-mail: ghyu@mater.ustb.edu.cn

    2016-12-15

    The perpendicular magnetic anisotropy (PMA) and the anomalous Hall effect (AHE) in Co/Ni multilayer were optimized by manipulating its interface structure (inducing HfO{sub 2} capping layer and Pt insertion) and post-annealing treatment. A strong PMA can be obtained in Co/Ni multilayers with HfO{sub 2} capping layer even after annealing at 400 °C. The heavy metal Hf may improve the interfacial spin-orbit coupling, which responsible for the enhanced PMA and high annealing stability. Moreover, the multilayer containing HfO{sub 2} capping layer also exhibited high saturation anomalous Hall resistivity through post-annealing, which is 0.85 μΩ cm after annealing at 375 °C, 211% larger than in the sample at deposited state which is only 0.27 μΩ cm. The enhancement of AHE is mainly attributed to the interface scattering through post-annealing treatment. - Highlights: • The perpendicular magnetic anisotropy and anomalous Hall effect of Co/Ni multilayer films were studied. • The PMA thermal stability of the Co/Ni ML can be enhanced by HfO{sub 2} capping layer and Pt insertion. • The anomalous Hall resistivity of Co/Ni ML covered by HfO{sub 2} was enhanced by post-annealing treatment.

  10. Strong anisotropic anomalous Hall effect and spin Hall effect in the chiral antiferromagnetic compounds Mn3X (X =Ge , Sn, Ga, Ir, Rh, and Pt)

    Science.gov (United States)

    Zhang, Yang; Sun, Yan; Yang, Hao; Železný, Jakub; Parkin, Stuart P. P.; Felser, Claudia; Yan, Binghai

    2017-02-01

    We have carried out a comprehensive study of the intrinsic anomalous Hall effect and spin Hall effect of several chiral antiferromagnetic compounds Mn3X (X = Ge, Sn, Ga, Ir, Rh and Pt) by ab initio band structure and Berry phase calculations. These studies reveal large and anisotropic values of both the intrinsic anomalous Hall effect and spin Hall effect. The Mn3X materials exhibit a noncollinear antiferromagnetic order which, to avoid geometrical frustration, forms planes of Mn moments that are arranged in a Kagome-type lattice. With respect to these Kagome planes, we find that both the anomalous Hall conductivity (AHC) and the spin Hall conductivity (SHC) are quite anisotropic for any of these materials. Based on our calculations, we propose how to maximize AHC and SHC for different materials. The band structures and corresponding electron filling, that we show are essential to determine the AHC and SHC, are compared for these different compounds. We point out that Mn3Ga shows a large SHC of about 600 (ℏ /e ) (Ωcm) -1 . Our work provides insights into the realization of strong anomalous Hall effects and spin Hall effects in chiral antiferromagnetic materials.

  11. Disorder effect on chiral edge modes and anomalous Hall conductance in Weyl semimetals

    International Nuclear Information System (INIS)

    Takane, Yositake

    2016-01-01

    Typical Weyl semimetals host chiral surface states and hence show an anomalous Hall response. Although a Weyl semimetal phase is known to be robust against weak disorder, the effect of disorder on chiral states has not been fully clarified so far. We study the behavior of such chiral states in the presence of disorder and its consequences on an anomalous Hall response, focusing on a thin slab of Weyl semimetal with chiral surface states along its edge. It is shown that weak disorder does not disrupt chiral edge states but crucially affects them owing to the renormalization of a mass parameter: the number of chiral edge states changes depending on the strength of disorder. It is also shown that the Hall conductance is quantized when the Fermi level is located near Weyl nodes within a finite-size gap. This quantization of the Hall conductance collapses once the strength of disorder exceeds a critical value, suggesting that it serves as a probe to distinguish a Weyl semimetal phase from a diffusive anomalous Hall metal phase. (author)

  12. Interfacial scattering effect on anisotropic magnetoresistance and anomalous Hall effect in Ta/Fe multilayers

    KAUST Repository

    Zhang, Qiang

    2017-12-26

    The effect of interfacial scattering on anisotropic magnetoresistance (AMR) and anomalous Hall effect (AHE) was studied in the (Ta12n/Fe36n)n multilayers, where the numbers give the thickness in nanometer and n is an integer from 1 to 12. The multilayer structure has been confirmed by the XRR spectra and STEM images of cross-sections. The magneto-transport properties were measured by four-point probe method in Hall bar shaped samples in the temperature range of 5 - 300 K. The AMR increases with n, which could be ascribed to the interfacial spin-orbit scattering. At 5 K, the longitudinal resistivity (ρ) increases by 6.4 times and the anomalous Hall resistivity (ρ) increases by 49.4 times from n =1 to n =12, indicative of the interfacial scattering effect. The skew-scattering, side-jump and intrinsic contributions to the AHE were separated successfully. As n increases from 1 to 12, the intrinsic contribution decreases because of the decaying crystallinity or finite size effect and the intrinsic contribution dominated the AHE for all samples. The side jump changes from negative to positive because the interfacial scattering and intralayer scattering in Fe layers both contribute to side jump in the AHE but with opposite sign.

  13. Importance of Coulomb correlation on the quantum anomalous Hall effect in V-doped topological insulators

    Science.gov (United States)

    Kim, Jeongwoo; Wang, Hui; Wu, Ruqian

    2018-03-01

    The presence of the quantum anomalous Hall effect in a V-doped topological insulator (TI) has not yet been understood from band-structure studies. Here, we demonstrate the importance of including the correlation effect in density-functional-theory (DFT) calculations, in the format as simple as the Hubbard U , for the determination of the topological properties of these materials. Our results show that the correlation effect turns a V-doped TI thin film into a Mott insulator and facilitates it entering the quantum anomalous Hall phase. Even the ferromagnetic ordering is also strongly affected by the inclusion of the U term. This work satisfactorily explains recent experimental observations and highlights the essentialness of having the Coulomb correlation effect in DFT studies of magnetic TIs.

  14. Interfacial scattering effect on anomalous Hall effect in Ni/Au multilayers

    KAUST Repository

    Zhang, Qiang

    2017-04-21

    The effect of interfacial scattering on anomalous Hall effect (AHE) was studied in the ${{\\\\left(\\\\text{N}{{\\\\text{i}}_{\\\\frac{36}{n}~\\\\text{nm}}}/\\\\text{A}{{\\\\text{u}}_{\\\\frac{12}{n}~\\\\text{nm}}}\\ ight)}_{n}}$ multilayers. Field-dependent Hall resistivity was measured in the temperature range of 5–300 K with the magnetic field up to 50 kOe. The anomalous Hall resistivity (${{\\ ho}_{\\\\text{AHE}}}$ ) was enhanced by more than six times at 5 K from n  =  1 to n  =  12 due to the increased interfacial scattering, whereas the longitudinal resistivity (${{\\ ho}_{xx}}$ ) was increased nearly three times. A scaling relation ${{\\ ho}_{\\\\text{AHE}}}\\\\sim \\ ho _{xx}^{\\\\gamma}$ with $\\\\gamma =1.85$ was obtained for ${{\\ ho}_{\\\\text{AHE}}}$ and ${{\\ ho}_{xx}}$ measured at 5 K, indicating that the dominant mechanism(s) of the AHE in these multilayers should be side-jump or/and intrinsic in nature. The new scaling relation ${{\\ ho}_{\\\\text{AHE}}}=\\\\alpha {{\\ ho}_{xx0}}+\\\\beta \\ ho _{xx0}^{2}+b\\ ho _{xx}^{2}$ (Tian et al 2009 Phys. Rev. Lett. 103 087206) has been applied to our data to identify the origin of the AHE in this type of multilayer.

  15. The chiral anomalous Hall effect in PdFe and AuFe alloys

    Energy Technology Data Exchange (ETDEWEB)

    Wolff-Fabris, F. [NHMFL, Los Alamos National Laboratory, MS E536, Los Alamos, NM 87544 (United States)], E-mail: frederikwf@lanl.gov; Pureur, P.; Schaf, J. [Instituto de Fisica, UFRGS, Caixa Postal 15051, Porto Alegre 91501970 (Brazil); Vieira, V. [Instituto de Fisica e Matematica-UFPel, Caixa Postal 354, Pelotas 96010900 (Brazil); Campbell, I.A. [Laboratoire des Colloides, Verres et Nanomateriaux, Universite Montpellier II, Montpellier 34095 (France)

    2008-04-01

    We have made systematic measurements of the anomalous Hall effect in a PdFe and AuFe alloys. The Hall coefficient R{sub h} has been measured as a function of applied magnetic field and temperature. The experimental results demonstrate that it is necessary to consider a negative contribution in addition to the canonical Karplus-Luttinger term. This difference term can be identified to the theoretically predicted chiral or real space Berry phase term and can be understood in terms of the Aharonov-Bohm-like intrinsic microscopic current loops arising from successive scatterings by canted local spins.

  16. Large anomalous Hall effect driven by a nonvanishing Berry curvature in the noncolinear antiferromagnet Mn3Ge.

    Science.gov (United States)

    Nayak, Ajaya K; Fischer, Julia Erika; Sun, Yan; Yan, Binghai; Karel, Julie; Komarek, Alexander C; Shekhar, Chandra; Kumar, Nitesh; Schnelle, Walter; Kübler, Jürgen; Felser, Claudia; Parkin, Stuart S P

    2016-04-01

    It is well established that the anomalous Hall effect displayed by a ferromagnet scales with its magnetization. Therefore, an antiferromagnet that has no net magnetization should exhibit no anomalous Hall effect. We show that the noncolinear triangular antiferromagnet Mn3Ge exhibits a large anomalous Hall effect comparable to that of ferromagnetic metals; the magnitude of the anomalous conductivity is ~500 (ohm·cm)(-1) at 2 K and ~50 (ohm·cm)(-1) at room temperature. The angular dependence of the anomalous Hall effect measurements confirms that the small residual in-plane magnetic moment has no role in the observed effect except to control the chirality of the spin triangular structure. Our theoretical calculations demonstrate that the large anomalous Hall effect in Mn3Ge originates from a nonvanishing Berry curvature that arises from the chiral spin structure, and that also results in a large spin Hall effect of 1100 (ħ/e) (ohm·cm)(-1), comparable to that of platinum. The present results pave the way toward the realization of room temperature antiferromagnetic spintronics and spin Hall effect-based data storage devices.

  17. Anomalous Hall effect in stoichiometric Heusler alloys with native disorder: A first-principles study

    Czech Academy of Sciences Publication Activity Database

    Kudrnovský, Josef; Drchal, Václav; Turek, Ilja

    2013-01-01

    Roč. 88, č. 1 (2013), "014422-1"-"014422-8" ISSN 1098-0121 R&D Projects: GA ČR(CZ) GAP204/11/1228 Institutional support: RVO:68378271 ; RVO:68081723 Keywords : anomalous Hall effect * Heusler alloys * native disorder * halfmetal * first-principles * linear response theory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.664, year: 2013

  18. Pumping conductance, the intrinsic anomalous Hall effect, and statistics of topological invariants

    Science.gov (United States)

    Dahlhaus, Jan; Ilan, Roni; Freed, Daniel; Freedman, Michael; Moore, Joel E.

    2015-06-01

    The pumping conductance of a disordered two-dimensional Chern insulator scales with increasing size and fixed disorder strength to sharp plateau transitions at well-defined energies between ordinary and quantum Hall insulators. When the disorder strength is scaled to zero as system size increases, the "metallic" regime of fluctuating Chern numbers can extend over the whole band. A simple argument leads to a sort of weighted equipartition of Chern number over minibands in a finite system with periodic boundary conditions: even though there must be strong fluctuations between disorder realizations, the mean Chern number at a given energy is determined by the clean Berry curvature distribution, as in the intrinsic anomalous Hall effect formula for metals. This estimate is compared to numerical results using recently developed operator algebra methods, and indeed the dominant variation of average Chern number is explained by the intrinsic anomalous Hall formula. A mathematical appendix provides more precise definitions and a model for the full distribution of Chern numbers.

  19. Scaling of Anomalous Hall Effects in Facing-Target Reactively Sputtered Fe4N Films

    KAUST Repository

    Zhang, Yan

    2015-05-13

    Anomalous Hall effect (AHE) in the reactively sputtered epitaxial and polycrystalline γ′-Fe4N films is investigated systematically. The Hall resistivity is positive in the entire temperature range. The magnetization, carrier density and grain boundaries scattering have a major impact on the AHE scaling law. The scaling exponent γ in the conventional scaling of is larger than 2 in both the epitaxial and polycrystalline γ′-Fe4N films. Although γ>2 has been found in heterogeneous systems due to the effects of the surface and interface scattering on AHE, γ>2 is not expected in homogenous epitaxial systems. We demonstrated that γ>2 results from residual resistivity (ρxx0) in γ′-Fe4N films. Furthermore, the side-jump and intrinsic mechanisms are dominant in both epitaxial and polycrystalline samples according to the proper scaling relation.

  20. Oxidized Mn:Ge magnetic semiconductor: Observation of anomalous Hall effect and large magnetoresistance

    Science.gov (United States)

    Duc Dung, Dang; Choi, Jiyoun; Feng, Wuwei; Cao Khang, Nguyen; Cho, Sunglae

    2018-03-01

    We report on the structural and magneto-transport properties of the as-grown and oxidized Mn:Ge magnetic semiconductors. Based on X-ray diffraction and X-ray photoelectron spectroscopy results, the samples annealed at 650 and 700 °C became fully oxidized and the chemical binding energies of Mn was found to be Mn3O4. Thus, the system became Mn3O4 clusters embedded in Ge1-yOy. The as-grown sample showed positive linear Hall effect and negligible negative magnetoresistance (MR), which trend remained for the sample annealed up to 550 °C. Interestingly, for the samples annealed at above 650 °C, we observed the anomalous Hall effect around 45 K and the giant positive MR, which are respectively 59.2% and 78.5% at 7 kOe annealed at 650 °C and 700 °C.

  1. Anomalous Hall conductivity: Local orbitals approach

    Czech Academy of Sciences Publication Activity Database

    Středa, Pavel

    2010-01-01

    Roč. 82, č. 4 (2010), 045115/1-045115/9 ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10100521 Keywords : anomalous Hall effect * Berry phase correction * orbital polarization momentum Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.772, year: 2010

  2. Reentrant quantum anomalous Hall effect with in-plane magnetic fields in HgMnTe quantum wells

    Science.gov (United States)

    Hsu, Hsiu-Chuan; Liu, Xin; Liu, Chao-Xing

    2013-08-01

    The quantum anomalous Hall effect has been predicted in HgMnTe quantum wells with an out-of-plane magnetization of Mn atoms. However, since HgMnTe quantum wells are paramagnetic, an out-of-plane magnetic field is required to polarize magnetic moments of Mn atoms, which inevitably induces Landau levels and makes it difficult to identify the origin of the quantized Hall conductance experimentally. In this work, we study the quantum anomalous Hall effect in the presence of an in-plane magnetic field in Mn-doped HgTe quantum wells. For a small out-of-plane magnetic field, the in-plane magnetic field can drive the system from a normal insulating state to a quantum anomalous Hall state. When the out-of-plane magnetic field is slightly above the transition point, the system shows a reentrant behavior of Hall conductance, varying from -e2/h to 0 and back to -e2/h, with increasing in-plane magnetic fields. The reentrant quantum anomalous Hall effect originates from the interplay between the exchange coupling of magnetic moments and the direct Zeeman coupling of magnetic fields. The calculation incorporating Landau levels shows that there is no qualitative change of the reentrant behavior.

  3. Intrinsic quantum spin Hall and anomalous Hall effects in h-Sb/Bi epitaxial growth on a ferromagnetic MnO2 thin film.

    Science.gov (United States)

    Zhou, Jian; Sun, Qiang; Wang, Qian; Kawazoe, Yoshiyuki; Jena, Puru

    2016-06-07

    Exploring a two-dimensional intrinsic quantum spin Hall state with a large band gap as well as an anomalous Hall state in realizable materials is one of the most fundamental and important goals for future applications in spintronics, valleytronics, and quantum computing. Here, by combining first-principles calculations with a tight-binding model, we predict that Sb or Bi can epitaxially grow on a stable and ferromagnetic MnO2 thin film substrate, forming a flat honeycomb sheet. The flatness of Sb or Bi provides an opportunity for the existence of Dirac points in the Brillouin zone, with its position effectively tuned by surface hydrogenation. The Dirac points in spin up and spin down channels split due to the proximity effects induced by MnO2. In the presence of both intrinsic and Rashba spin-orbit coupling, we find two band gaps exhibiting a large band gap quantum spin Hall state and a nearly quantized anomalous Hall state which can be tuned by adjusting the Fermi level. Our findings provide an efficient way to realize both quantized intrinsic spin Hall conductivity and anomalous Hall conductivity in a single material.

  4. Tunable anomalous hall effect induced by interfacial catalyst in perpendicular multilayers

    Science.gov (United States)

    Zhang, J. Y.; Peng, W. L.; Sun, Q. Y.; Liu, Y. W.; Dong, B. W.; Zheng, X. Q.; Yu, G. H.; Wang, C.; Zhao, Y. C.; Wang, S. G.

    2018-04-01

    The interfacial structures, playing a critical role on the transport properties and the perpendicular magnetic anisotropy in thin films and multilayers, can be modified by inserting an ultrathin functional layer at the various interfaces. The anomalous Hall effect (AHE) in the multilayers with core structure of Ta/CoFeB/X/MgO/Ta (X: Hf or Pt) is tuned by interfacial catalytic engineering. The saturation anomalous Hall resistance (RAH) is increased by 16.5% with 0.1 nm Hf insertion compared with the reference sample without insertion. However, the RAH value is decreased by 9.0% with 0.1 nm Pt insertion. The interfacial states were characterized by the X-ray photoelectron spectroscopy (XPS). The XPS results indicate that a strong bonding between Hf and O for Hf insertion, but no bonding between Pt and O for Pt insertion. The bonding between metal and oxygen leads to various oxygen migration behavior at the interfaces. Therefore, the opposite behavior about the RAH originates from the different oxygen behavior due to various interfacial insertion. This work provides a new approach to manipulate spin transport property for the potential applications.

  5. Local orbitals approach to the anomalous Hall and Nernst effects in itinerant ferromagnets

    Directory of Open Access Journals (Sweden)

    Středa Pavel

    2014-07-01

    Full Text Available Linear response of the orbital momentum to the gradient of the chemical potential is used to obtain anomalous Hall conductivity. Transition from the ideal Bloch system for which the conductivity is determined by the Berry phase curvatures to the case of strong disorder for which the conductivity becomes dependent on the relaxation time is analysed. Presented tight-binding model reproduces experimentally observed qualitative features of the anomalous Hall conductivity and the transverse Peltier coefficient in the so called bad-metal and scattering-independent regimes.

  6. Skew scattering dominated anomalous Hall effect in Cox(MgO)100-x granular thin films

    KAUST Repository

    Zhang, Qiang

    2017-07-31

    We investigated the mechanism(s) of the anomalous Hall effect (AHE) in magnetic granular materials by fabricating 100-nm-thick thin films of Cox(MgO)100-x with a Co volume fraction of 34≤x≤100 using co-sputtering at room temperature. We measured the temperature dependence of longitudinal resistivity (ρxx) and anomalous Hall resistivity (ρAHE) from 5 K to 300 K in all samples. We found that when x decreases from 100 to 34, the values of ρxx and ρAHE respectively increased by about four and three orders in magnitude. By linearly fitting the data, obtained at 5 K, of anomalous Hall coefficient (Rs) and of ρxx to log(Rs)~γlog(ρxx), we found that our results perfectly fell on a straight line with a slope of γ= 0.97±0.02. This fitting value of γ in Rsρxxγ clearly suggests that skew scattering dominated the AHE in this granular system. To explore the effect of the scattering on the AHE, we performed the same measurements on annealed samples. We found that although both ρxx and ρAHE significantly reduced after annealing, the correlation between them was almost the same, which was confirmed by the fitted value, γ=0.99±0.03. These data strongly suggest that the AHE originates from the skew scattering in Co-MgO granular thin films no matter how strong the scatterings of electrons by the interfaces and defects is. This observation may be of importance to the development of spintronic devices based on MgO.

  7. IUPAP C-10 Award Talk: From Topological Insulators to Quantum Anomalous Hall Effect

    Science.gov (United States)

    Chang, Cui-Zu

    The quantum anomalous Hall (QAH) effect can be considered as the quantum Hall (QH) effect without external magnetic field, which can be realized by time reversal symmetry breaking in a topologically non-trivial system. A QAH system carries spin-polarized dissipationless chiral edge transport channels without the need for external energy input, hence may have huge impact on future electronic and spintronic device applications for ultralow-power consumption. The many decades quest for the experimental realization of QAH phenomenon became a possibility in 2006 with the discovery of topological insulators (TIs). In 2013, the QAH effect was observed in thin films of Cr-doped TI for the first time. Two years later in a near ideal system, V-doped TI, contrary to the negative prediction from first principle calculations, a high-precision QAH quantization with more robust magnetization and a perfectly dissipationless chiral current flow was demonstrated. In this talk, I will introduce the route to the experimental observation of the QAH effect in above-mentioned two systems, and discuss the zero magnetic field dissipationless edge current flow as well as the origin of the dissipative channels in the QAH state. Finally I will talk about our recent progress on the QAH insulator-Anderson insulator quantum phase transition and its scaling behaviors.

  8. Effective field theory of an anomalous Hall metal from interband quantum fluctuations

    Science.gov (United States)

    Chua, Victor; Assawasunthonnet, Wathid; Fradkin, Eduardo

    2017-07-01

    We construct an effective field theory, a two-dimensional two-component metallic system described by a model with two Fermi surfaces ("pockets"). This model describes a translationally invariant metallic system with two types of fermions, each with its own Fermi surface, with forward scattering interactions. This model, in addition to the O (2 ) rotational invariance, has a U (1 )×U (1 ) symmetry of separate charge conservation for each Fermi surface. For sufficiently attractive interactions in the d -wave (quadrupolar) channel, this model has an interesting phase diagram that includes a spontaneously generated anomalous Hall metal phase. We derive the Landau-Ginzburg effective action of quadrupolar order parameter fields which enjoys an O (2 )×U (1 ) global symmetry associated to spatial isotropy and the internal U (1 ) relative phase symmetries, respectively. We show that the order parameter theory is dynamically local with a dynamical scaling of z =2 and perform a one-loop renormalization group analysis of the Landau-Ginzburg theory. The electronic liquid crystal phases that result from spontaneous symmetry breaking are studied and we show the presence of Landau damped Nambu-Goldstone modes at low momenta that is a signature of non-Fermi-liquid behavior. Electromagnetic linear response is also analyzed in both the normal and symmetry broken phases from the point of view of the order parameter theory. The nature of the coupling of electromagnetism to the order parameter fields in the normal phase is non-minimal and decidedly contains a precursor to the anomalous Hall response in the form of a order-parameter-dependent Chern-Simons term in the effective action.

  9. Anomalous Hall effect and magnetoresistance behavior in Co/Pd1−xAgx multilayers

    KAUST Repository

    Guo, Z. B.

    2013-02-13

    In this paper, we report anomalous Hall effect (AHE) correlated with the magnetoresistance behavior in [Co/Pd1-xAg x]n multilayers. For the multilayers with n = 6, the increase in Ag content from x = 0 to 0.52 induces the change in AHE sign from negative surface scattering-dominated AHE to positive interface scattering-dominated AHE, which is accompanied with the transition from anisotropy magnetoresistance (AMR) dominated transport to giant magnetoresistance (GMR) dominated transport. For n = 80, scaling analysis with Rs ∝ρ xx γ yields γ ∼ 3.44 for x = 0.52 which presents GMR-type transport, in contrast to γ ∼ 5.7 for x = 0 which presents AMR-type transport. © 2013 American Institute of Physics.

  10. Observation of the Zero Hall Plateau in a Quantum Anomalous Hall Insulator

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Yang; Feng, Xiao; Ou, Yunbo; Wang, Jing; Liu, Chang; Zhang, Liguo; Zhao, Dongyang; Jiang, Gaoyuan; Zhang, Shou-Cheng; He, Ke; Ma, Xucun; Xue, Qi-Kun; Wang, Yayu

    2015-09-16

    We report experimental investigations on the quantum phase transition between the two opposite Hall plateaus of a quantum anomalous Hall insulator. We observe a well-defined plateau with zero Hall conductivity over a range of magnetic field around coercivity when the magnetization reverses. The features of the zero Hall plateau are shown to be closely related to that of the quantum anomalous Hall effect, but its temperature evolution exhibits a significant difference from the network model for a conventional quantum Hall plateau transition. We propose that the chiral edge states residing at the magnetic domain boundaries, which are unique to a quantum anomalous Hall insulator, are responsible for the novel features of the zero Hall plateau.

  11. Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects

    Science.gov (United States)

    Otrokov, M. M.; Menshchikova, T. V.; Vergniory, M. G.; Rusinov, I. P.; Vyazovskaya, A. Yu; Koroteev, Yu M.; Bihlmayer, G.; Ernst, A.; Echenique, P. M.; Arnau, A.; Chulkov, E. V.

    2017-06-01

    An interplay of spin-orbit coupling and intrinsic magnetism is known to give rise to the quantum anomalous Hall and topological magnetoelectric effects under certain conditions. Their realization could open access to low power consumption electronics as well as many fundamental phenomena like image magnetic monopoles, Majorana fermions and others. Unfortunately, being realized very recently, these effects are only accessible at extremely low temperatures and the lack of appropriate materials that would enable the temperature increase is a most severe challenge. Here, we propose a novel material platform with unique combination of properties making it perfectly suitable for the realization of both effects at elevated temperatures. The key element of the computational material design is an extension of a topological insulator (TI) surface by a thin film of ferromagnetic insulator, which is both structurally and compositionally compatible with the TI. Following this proposal we suggest a variety of specific systems and discuss their numerous advantages, in particular wide band gaps with the Fermi level located in the gap.

  12. Abelian and non-Abelian anyons in integer quantum anomalous Hall effect and topological phase transitions via superconducting proximity effect

    Science.gov (United States)

    Liu, Xuele; Wang, Ziqiang; Xie, X. C.; Yu, Yue

    2011-03-01

    We study the quantum anomalous Hall effect described by a class of two-component Haldane models on square lattices. We show that the latter can be transformed into a pseudospin triplet p+ip-wave paired superfluid. In the long wavelength limit, the ground-state wave function is described by Halperin’s (1,1,-1) state of neutral fermions analogous to the double-layer quantum Hall effect. The vortex excitations are charge e/2 Abelian anyons which carry a neutral Dirac fermion zero mode. The superconducting proximity effect induces “tunneling” between “layers” which leads to topological phase transitions whereby the Dirac fermion zero mode fractionalizes and Majorana fermions emerge in the edge states. The charge e/2 vortex excitation carrying a Majorana zero mode is a non-Abelian anyon. The proximity effect can also drive a conventional insulator into a quantum anomalous Hall effect state with a Majorana edge mode and the non-Abelian vortex excitations.

  13. Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films

    KAUST Repository

    Duan, Xiaofei

    2013-09-01

    The reactive-sputtered polycrystalline Ti1 - xCrxN films with 0.17 ≤ x ≤ 0.51 are ferromagnetic and at x = 0.47 the Curie temperature TC shows a maximum of ~ 120 K. The films are metallic at 0 ≤ x ≤ 0.47, while the films with x = 0.51 and 0.78 are semiconducting-like. The upturn of resistivity below 70 K observed in the films with 0.10 ≤ x ≤ 0.47 is from the effects of the electron-electron interaction and weak localization. The negative magnetoresistance (MR) of the films with 0.10 ≤ x ≤ 0.51 is dominated by the double-exchange interaction, while at x = 0.78, MR is related to the localized magnetic moment scattering at the grain boundaries. The scaling ρxyA/n ∝ ρxx2.19 suggests that the anomalous Hall effect in the polycrystalline Ti1 - xCrxN films is scattering-independent. © 2013 Elsevier B.V. All rights reserved.

  14. Anomalous Hall effect in ion-beam sputtered Co2FeAl full Heusler alloy thin films

    Science.gov (United States)

    Husain, Sajid; Kumar, Ankit; Akansel, Serkan; Svedlindh, Peter; Chaudhary, Sujeet

    2017-11-01

    Investigations of temperature dependent anomalous Hall effect and longitudinal resistivity in Co2FeAl (CFA) thin films grown on Si(1 0 0) at different substrate temperature Ts are reported. The scaling of the anomalous Hall conductivity (AHC) and the associated phenomenological mechanisms (intrinsic and extrinsic) are analyzed vis-à-vis influence of Ts. The intrinsic contribution to AHC is found to be dominating over the extrinsic one. The appearance of a resistivity minimum at low temperature necessitates the inclusion of quantum corrections on account of weak localization and electron-electron scattering effects whose strength reduces with increase in Ts. The study establishes that the optimization of Ts plays an important role in the improvement of atomic ordering which indicates the higher strength of spin-orbit coupling and leads to the dominant intrinsic contribution to AHC in these CFA full Heusler alloy thin films.

  15. Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect.

    Science.gov (United States)

    Luo, Zhaochu; Xiong, Chengyue; Zhang, Xu; Guo, Zhen-Gang; Cai, Jianwang; Zhang, Xiaozhong

    2016-04-13

    The anomalous Hall effect of a magnetic material is coupled to the nonlinear transport effect of a semiconductor material in a simple structure to achieve a large geometric magnetoresistance (MR) based on a diode-assisted mechanism. An extremely large MR (>10(4) %) at low magnetic fields (1 mT) is observed at room temperature. This MR device shows potential for use as a logic gate for the four basic Boolean logic operations. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Thickness dependence of magnetic anisotropy and intrinsic anomalous Hall effect in epitaxial Co{sub 2}MnAl film

    Energy Technology Data Exchange (ETDEWEB)

    Meng, K.K., E-mail: kkmeng@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Miao, J.; Xu, X.G. [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China); Zhao, J.H. [State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Jiang, Y. [School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083 (China)

    2017-04-04

    We have investigated the thickness dependence of magnetic anisotropy and intrinsic anomalous Hall effect (AHE) in single-crystalline full-Heusler alloy Co{sub 2}MnAl (CMA) grown by molecular-beam epitaxy on GaAs(001). The magnetic anisotropy is the interplay of uniaxial and the fourfold anisotropy, and the corresponding anisotropy constants have been deduced. Considering the thickness of CMA is small, we ascribe it to the influence from interface stress. The AHE in CMA is found to be well described by a proper scaling. The intrinsic anomalous conductivity is found to be smaller than the calculated one and is thickness dependent, which is ascribed to the influence of chemical ordering by affecting the band structure and Fermi surface. - Highlights: • Single-crystalline full-Heusler alloy Co{sub 2}MnAl grown by molecular-beam epitaxy. • Uniaxial and the fourfold magnetic anisotropies in Heusler alloys. • Anomalous Hall effect in Heusler alloys. • The intrinsic contributions modified by chemical ordering.

  17. Anomalous Hall effect in the van der Waals bonded ferromagnet Fe3 -xGeTe2

    Science.gov (United States)

    Liu, Yu; Stavitski, Eli; Attenkofer, Klaus; Petrovic, C.

    2018-04-01

    We report the anomalous Hall effect (AHE) in single crystals of a quasi-two-dimensional Fe3 -xGeTe2 (x ≈0.36 ) ferromagnet grown by the flux method which induces defects on the Fe site and bad metallic resistivity. Fe K-edge x-ray absorption spectroscopy was measured to provide information on the local atomic environment in such crystals. The dc and ac magnetic susceptibility measurements indicate a second-stage transition below 119 K in addition to the paramagnetic to ferromagnetic transition at 153 K. A linear scaling behavior between the modified anomalous Hall resistivity ρx y/μ0Heff and longitudinal resistivity ρxx 2M /μ0Heff implies that the AHE in Fe3 -xGeTe2 should be dominated by the intrinsic Karplus-Luttinger mechanism rather than the extrinsic skew-scattering and side-jump mechanisms. The observed deviation in the linear-M Hall conductivity σxy A below 30 K is in line with its transport characteristic at low temperatures, implying the scattering of conduction electrons due to magnetic disorder and the evolution of the Fermi surface induced by a possible spin-reorientation transition.

  18. Skew scattering dominated anomalous Hall effect in Co x (MgO)100-x granular thin films.

    Science.gov (United States)

    Zhang, Qiang; Wen, Yan; Zhao, Yuelei; Li, Peng; He, Xin; Zhang, Junli; He, Yao; Peng, Yong; Yu, Ronghai; Zhang, Xixiang

    2017-10-18

    We investigated the mechanism(s) of the anomalous Hall effect (AHE) in magnetic granular materials by fabricating 100 nm-thick thin films of Co x (MgO) 100-x with a Co volume fraction of 34  ⩽  x  ⩽  100 using co-sputtering at room temperature. We measured the temperature dependence of longitudinal resistivity ([Formula: see text]) and anomalous Hall resistivity ([Formula: see text]) from 5 K to 300 K in all samples. We found that when x decreases from 100 to 34, the values of [Formula: see text] and [Formula: see text] respectively increased by about four and three orders in magnitude. By linearly fitting the data, obtained at 5 K, of anomalous Hall coefficient ([Formula: see text]) and of [Formula: see text] to [Formula: see text], we found that our results perfectly fell on a straight line with a slope of [Formula: see text] 0.97  ±  0.02. This fitting value of [Formula: see text] in [Formula: see text] clearly suggests that skew scattering dominated the AHE in this granular system. To explore the effect of the scattering on the AHE, we performed the same measurements on annealed samples. We found that although both [Formula: see text] and [Formula: see text] significantly reduced after annealing, the correlation between them was almost the same, which was confirmed by the fitted value, [Formula: see text]  =  0.99  ±  0.03. These data strongly suggest that the AHE originates from the skew scattering in Co-MgO granular thin films no matter how strong the scattering of electrons by the interfaces and defects is. This observation may be of importance to the development of spintronic devices based on MgO.

  19. Influence of defects and disorder on anomalous Hall effect and spin Seebeck effect on permalloy and Heusler compounds

    Energy Technology Data Exchange (ETDEWEB)

    Vilanova Vidal, Enrique

    2012-09-19

    In this work Heusler thin films have been prepared and their transport properties have been studied. Of particularly interest is the anomalous Hall effect (AHE). The effect is a long known but still not fully understood transport effect. Most theory papers focus on the influence of one particular contribution to the AHE. Actual measured experimental data, however, often are not in accordance with idealized assumptions. This thesis discusses the data analysis for materials with low residual resistivity ratios. As prototypical materials, half metallic Heusler compounds are studied. Here, the influence of defects and disorder is apparent in a material with a complex topology of the Fermi surface. Using films with different degrees of disorder, the different scattering mechanisms can be separated. For Co{sub 2}FeSi{sub 0.6}Al{sub 0.4} and Co{sub 2}FeGa{sub 0.5}Ge{sub 0.5}, the AHE induced by B2-type disorder and temperature-dependent scattering is positive, while DO{sub 3}-type disorder and possible intrinsic contributions possess a negative sign. For these compounds, magneto-optical Kerr effects (MOKE) are investigated. First order contributions as a function of intrinsic and extrinsic parameters are qualitatively analyzed. The relation between the crystalline ordering and the second order contributions to the MOKE signal is studied. In addition, sets of the Heusler compound Co{sub 2}MnAl thin films were grown on MgO(100) and Si(100) substrates by radio frequency magnetron sputtering. Composition, magnetic and transport properties were studied systematically for samples deposited at different conditions. In particular, the anomalous Hall effect resistivity presents an extraordinarily temperature independent behavior in a moderate magnetic field range from 0 to 0.6 T. The off-diagonal transport at temperatures up to 300 C was analyzed. The data show the suitability of the material for Hall sensors working well above room temperature. Recently, the spin Seebeck effect

  20. Effect of anisotropy on anomalous Hall effect in Tb-Fe thin films

    International Nuclear Information System (INIS)

    Babu, V. Hari; Markandeyulu, G.; Subrahmanyam, A.

    2009-01-01

    The electrical and Hall resistivities of Tb x Fe 100-x thin films in the temperature range 13-300 K were investigated. The sign of Hall resistivity at 300 K is found to change from positive for x=28 film to negative for x=30 film, in accordance with the compensation of Tb and Fe moments. All the films are seen to have planar magnetic anisotropy at 13 K. The temperature coefficients of electrical resistivities of the amorphous films with 19≤x≤51 are seen to be negative. The temperature dependence of Hall resistivity of these films is explained on the basis of random magnetic anisotropy model. The temperature dependences of Hall resistivities of the x=22 and 41 films are seen to exhibit a nonmonotonous behavior due to change in anisotropy from perpendicular to planar. The same behavior is considered for the explanation regarding the probable formation of Berry phase curvature in these films.

  1. Transport theory for disordered multiple-band systems: Anomalous Hall effect and anisotropic magnetoresistance

    Czech Academy of Sciences Publication Activity Database

    Kovalev, A.A.; Tserkovnyak, Y.; Výborný, Karel; Sinova, J.

    2009-01-01

    Roč. 79, č. 19 (2009), 19529/1-19529/19 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KJB100100802 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic materials * Hall effect * magnetoresistance * quasiparticles * spin-orbit interactions * two-dimensional electro n gas Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://link.aps.org/doi/10.1103/PhysRevB.79.195129

  2. Hybrid skew scattering regime of the anomalous Hall effect in Rashba systems: Unifying Keldysh, Boltzmann, and Kubo formalisms

    Czech Academy of Sciences Publication Activity Database

    Kovalev, A.A.; Výborný, Karel; Sinova, J.

    2008-01-01

    Roč. 78, č. 4 (2008), 041305/1-041305/4 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KJB100100802 Institutional research plan: CEZ:AV0Z10100521 Keywords : anomalous Hall efect * Rashba systemy * Keldysh formalism Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.322, year: 2008

  3. Anomalous Integer Quantum Hall Effect in the Ballistic Regime with Quantum Point Contacts

    NARCIS (Netherlands)

    Wees, B.J. van; Willems, E.M.M.; Harmans, C.J.P.M.; Beenakker, C.W.J.; Houten, H. van; Williamson, J.G.; Foxon, C.T.; Harris, J.J.

    1989-01-01

    The Hall conductance of a wide two-dimensional electron gas has been measured in a geometry in which two quantum point contacts form controllable current and voltage probes, separated by less than the transport mean free path. Adjustable barriers in the point contacts allow selective population and

  4. Anomalous Hall effect suppression in anatase Co:TiO2 by the insertion of an interfacial TiO2 buffer layer

    NARCIS (Netherlands)

    Lee, Y.J.; de Jong, Machiel Pieter; van der Wiel, Wilfred Gerard; Kim, Y.; Brock, J.D.

    2010-01-01

    We present the effect of introducing a TiO2 buffer layer at the SrTiO3 /Co:TiO2 interface on the magnetic and structural properties of anatase Co:TiO2 1.4 at. % Co. Inserting the buffer layer leads to suppression of the room-temperature anomalous Hall effect, accompanied by a reduced density of Co

  5. Quantum hall effect. A perspective

    International Nuclear Information System (INIS)

    Aoki, Hideo

    2006-01-01

    Novel concepts and phenomena are emerging recently in the physics of quantum Hall effect. This article gives an overview, which starts from the fractional quantum Hall system viewed as an extremely strongly correlated system, and move on to present various phenomena involving internal degrees of freedom (spin and layer), non-equilibrium and optical properties, and finally the spinoff to anomalous Hall effect and the rotating Bose-Einstein condensate. (author)

  6. Giant magnetic anisotropy and robust quantum anomalous Hall effect in boron-doped graphene with Re-adsorption

    Science.gov (United States)

    Zhang, Kai-Cheng; Li, Yong-Feng; Liu, Yong; Zhu, Yan

    2018-04-01

    Recently topological materials have attracted much attention due to their quantization transports as well as edge states. It will be excellent to realize the robust quantum anomalous Hall transports in graphene-based devices. Using density-functional theory and tight-binding method, we investigated the structural, magnetic and topological properties for the boron-doped graphene with Re-adsorption. A large band-gap of 32.5 meV is opened by the Rashba spin-orbital coupling, and the band-gap is robust against the shape deformation of  ± 4% along the zigzag direction. Giant magnetic anisotropy emerges in this adsorption system together with the Fermi level lying in the band gap. Both the magnetic anisotropy and the band gap can be tuned by a moderate electric field. Calculations reveal that the system exhibits the quantization transports with the Chern number C=2 .

  7. The (Anomalous) Hall Magnetometer as an Analysis Tool for High Density Recording Media

    NARCIS (Netherlands)

    de Haan, S.; de Haan, S.; Lodder, J.C.; Popma, T.J.A.

    1991-01-01

    In this work an evaluation tool for the characterization of high-density recording thin film media is discussed. The measurement principles are based on the anomalous and the planar Hall effect. We used these Hall effects to characterize ferromagnetic Co-Cr films and Co/Pd multilayers having

  8. Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film

    Science.gov (United States)

    Li, W.; Claassen, M.; Chang, Cui-Zu; Moritz, B.; Jia, T.; Zhang, C.; Rebec, S.; Lee, J. J.; Hashimoto, M.; Lu, D.-H.; Moore, R. G.; Moodera, J. S.; Devereaux, T. P.; Shen, Z.-X.

    2016-09-01

    The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb)2Te3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Dirac point. Our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.

  9. Giant anisotropic magnetoresistance in a quantum anomalous Hall insulator

    Science.gov (United States)

    Kandala, Abhinav; Richardella, Anthony; Kempinger, Susan; Liu, Chao-Xing; Samarth, Nitin

    2015-01-01

    When a three-dimensional ferromagnetic topological insulator thin film is magnetized out-of-plane, conduction ideally occurs through dissipationless, one-dimensional (1D) chiral states that are characterized by a quantized, zero-field Hall conductance. The recent realization of this phenomenon, the quantum anomalous Hall effect, provides a conceptually new platform for studies of 1D transport, distinct from the traditionally studied quantum Hall effects that arise from Landau level formation. An important question arises in this context: how do these 1D edge states evolve as the magnetization is changed from out-of-plane to in-plane? We examine this question by studying the field-tilt-driven crossover from predominantly edge-state transport to diffusive transport in Crx(Bi,Sb)2−xTe3 thin films. This crossover manifests itself in a giant, electrically tunable anisotropic magnetoresistance that we explain by employing a Landauer–Büttiker formalism. Our methodology provides a powerful means of quantifying dissipative effects in temperature and chemical potential regimes far from perfect quantization. PMID:26151318

  10. Effects of HfO{sub 2}/Co interface and Co/HfO{sub 2} interface on anomalous Hall behavior in perpendicular Co/Pt multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Shao-Long [Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871 (China); Yang, Guang [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Teng, Jiao, E-mail: tengjiao@mater.ustb.edu.cn [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Guo, Qi-Xun; Liu, Yi-Wei; Li, Xu-Jing [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China); Yu, Guang-Hua, E-mail: ghyu@mater.ustb.edu.cn [Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)

    2017-07-01

    Highlights: • Anomalous Hall effect in perpendicular Co/Pt multilayers is studied. • Thermally stable AHE feature is obtained in [Pt/Co]{sub 3}/HfO{sub 2}/Pt multilayers. • Good thermal stability is due to enhanced intrinsic and side-jump contributions. - Abstract: Effects of the HfO{sub 2}/Co interface and the Co/HfO{sub 2} interface on thermal stability of anomalous Hall effect (AHE) in perpendicular Co/Pt multilayers have been studied. It is observed that thermally stable AHE behavior cannot be obtained in perpendicular Co/Pt multilayers with the HfO{sub 2}/Co interface, mainly due to Co-Pt interdiffusion during annealing. In contrast, thermally stable AHE feature is observed in perpendicular Co/Pt multilayers with the Co/HfO{sub 2} interface despite Co-Pt interdiffusion, which is owing to the enhancement of the side jump and intrinsic contributions to the AHE through interfacial modification after annealing.

  11. Anomalous DC Hall response in noncentrosymmetric tilted Weyl semimetals

    Science.gov (United States)

    Mukherjee, S. P.; Carbotte, J. P.

    2018-03-01

    Weyl nodes come in pairs of opposite chirality. For broken time reversal symmetry (TR) they are displaced in momentum space by {Q} and the anomalous DC Hall conductivity σxy is proportional to {Q} at charge neutrality. For finite doping there are additive corrections to σxy which depend on the chemical potential as well as on the tilt (C ) of the Dirac cones and on their relative orientation. If inversion symmetry (I) is also broken the Weyl nodes are shifted in energy by an amount Q0 . This introduces further changes in σxy and we provide simple analytic formulas for these modifications for both type I (Ctype II (C>1 , overtilted) Weyl. For type I when the Weyl nodes have equal magnitude but oppositely directed tilts, the correction to σxy is proportional to the chemical potential μ and completely independent of the energy shift Q0 . When instead the tilts are parallel, the correction is linear in Q0 and μ drops out. For type II the corrections involve both μ and Q0 , are nonlinear and also involve a momentum cut off. We discuss the implied changes to the Nernst coefficient and to the thermal Hall effect of a finite Q0 .

  12. Ferromagnetism in reactive sputtered Cu0.96Fe 0.04O1-δ nanocrystalline films evidenced by anomalous Hall effect

    KAUST Repository

    Mi, Wenbo

    2011-03-14

    Cu0.96Fe0.04O1-δ nanocrystalline films were fabricated using reactive sputtering at different oxygen partial pressures (PO2). The electrical transport properties of the films were measured in a broad temperature range (10-300 K) under magnetic fields of up to 5T. Anomalous Hall effect (AHE) of up to 0.4μΩ cm was observed at 10 K and decreased to 0.2μΩ cm at 300 K. The characteristic AHE clearly indicated the existence of ferromagnetism in these materials. The AHE weakened as PO2 increased because the increasing PO2 reduced the fraction of Fe2+ ions, and consequently weakened the double exchange coupling between Fe2+-O2--Cu2+ in the materials. © 2011 The Japan Society of Applied Physics.

  13. Scaling of the anomalous Hall current in Fe100−x(SiO2)x films

    KAUST Repository

    Xu, W. J.

    2011-05-20

    To study the origin of the anomalous Hall effect, Fe100−x(SiO2)x granular films with a volume fraction of SiO2 (0 ⩽ x ⩽ 40.51) were fabricated using cosputtering. Hall and longitudinal resistivities were measured in the temperature range of 5–350 K with magnetic fields up to 5 T. As x increased from 0 to 40.51, the anomalous Hall resistivity and longitudinal resistivity increased by about four and three orders in magnitude, respectively. Analysis of the results revealed that the normalized anomalous Hall conductivity is a constant for all of the samples, which may suggest a scattering-independent anomalous Hall conductivity in Fe.

  14. First principles calculation of anomalous Hall conductivity in ferromagnetic bcc Fe

    Czech Academy of Sciences Publication Activity Database

    Yao, Y.; Kleinman, L.; MacDonald, A. H.; Sinova, J.; Jungwirth, Tomáš; Wang, D. S.; Wang, E.; Niu, Q.

    2004-01-01

    Roč. 92, č. 3 (2004), 037204/1-037204/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : transition metal ferromagnet * anomalous Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.218, year: 2004

  15. Precision measurement of the quantized anomalous Hall resistance at zero magnetic field

    Science.gov (United States)

    Götz, Martin; Fijalkowski, Kajetan M.; Pesel, Eckart; Hartl, Matthias; Schreyeck, Steffen; Winnerlein, Martin; Grauer, Stefan; Scherer, Hansjörg; Brunner, Karl; Gould, Charles; Ahlers, Franz J.; Molenkamp, Laurens W.

    2018-02-01

    In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed using standard transport measurement techniques which are difficult to trace to the von-Klitzing constant RK with high precision. Here, we present a metrologically comprehensive measurement, including a full uncertainty budget, of the resistance quantization of V-doped (Bi,Sb)2Te3 devices without the external magnetic field. For the deviation of the quantized anomalous Hall resistance from RK, we determined a value of 0.17 ± 0.25 ppm, the smallest and most precise value reported to date. This is a step towards realization of a practical zero-field quantum resistance standard which in combination with the Josephson effect could provide the universal quantum units standard in the future.

  16. Anomalous Hall effect and current spin polarization in Co2Fe X Heusler compounds (X =Al , Ga , In , Si , Ge , and Sn ): A systematic ab initio study

    Science.gov (United States)

    Huang, Hung-Lung; Tung, Jen-Chuan; Guo, Guang-Yu

    2015-04-01

    Co-based Heusler compounds are ferromagnetic with a high Curie temperature and a large magnetization density, and thus are promising for spintronic applications. In this paper, we perform a systematic ab initio study of two principal spin-related phenomena, namely, anomalous Hall effect and current spin polarization, in Co2-based Heusler compounds Co2Fe X (X =Al , Ga , In , Si , Ge , Sn ) in the cubic L2 1 structure within the density functional theory with the generalized gradient approximation (GGA). The accurate all-electron full-potential linearized augmented plane-wave method is used. First, we find that the spin polarization of the longitudinal current (PL) in Co2Fe X (X =Al , Ga , In , Al0.5Si0.5 , and Sn ) is ˜100 % even though that of the electronic states at the Fermi level (PD) is not. Further, the other compounds also have a high current spin polarization with PL>85 %. This indicates that all the Co2Fe X compounds considered are promising for spin-transport devices. Interestingly, PD is negative in Co2Fe X (X =Si , Ge , and Sn ), differing in sign from the PL as well as that from the transport experiments. Second, the calculated anomalous Hall conductivities (AHCs) are moderate, being within 200 S/cm, and agree well with the available experiments on a highly L2 1 ordered Co2FeSi specimen although they differ significantly from the reported experiments on other compounds where the B2 antisite disorders were present. Surprisingly, the AHC in Co2FeSi decreases and then changes sign when Si is replaced by Ge and finally by Sn. Third, the calculated total magnetic moments agree well with the corresponding experimental ones in all the studied compounds except Co2FeSi where a difference of 0.3 μB/f .u . exists. We also perform the GGA plus on-site Coulomb interaction U calculations in the GGA + U scheme. We find that including the U affects the calculated total magnetic moment, spin polarization and AHC significantly, and in most cases, unfortunately

  17. Tuning anomalous Hall conductivity in L1[sub 0] FePt films by long range chemical ordering

    KAUST Repository

    Chen, M.

    2011-02-24

    For L10 FePt films, the anomalous Hall conductivity σ xy=-a σxx-b, where a=a0f(T), b=b 0f(T), and f (T) is the temperature dependence factor of the spontaneous magnetization. With increasing chemical long range ordering S, a0 changes its sign accompanied by a reduction of its magnitude and b0 increases monotonically. The spin-orbit coupling strength is suggested to increase with increasing S. As an approach, the long range chemical ordering can be used to control the anomalous Hall effect in ferromagnetic alloy films. © 2011 American Institute of Physics.

  18. Quasi-one-dimensional quantum anomalous Hall systems as new platforms for scalable topological quantum computation

    Science.gov (United States)

    Chen, Chui-Zhen; Xie, Ying-Ming; Liu, Jie; Lee, Patrick A.; Law, K. T.

    2018-03-01

    Quantum anomalous Hall insulator/superconductor heterostructures emerged as a competitive platform to realize topological superconductors with chiral Majorana edge states as shown in recent experiments [He et al. Science 357, 294 (2017), 10.1126/science.aag2792]. However, chiral Majorana modes, being extended, cannot be used for topological quantum computation. In this work, we show that quasi-one-dimensional quantum anomalous Hall structures exhibit a large topological regime (much larger than the two-dimensional case) which supports localized Majorana zero energy modes. The non-Abelian properties of a cross-shaped quantum anomalous Hall junction is shown explicitly by time-dependent calculations. We believe that the proposed quasi-one-dimensional quantum anomalous Hall structures can be easily fabricated for scalable topological quantum computation.

  19. Prediction of a quantum anomalous Hall state in Co-decorated silicene

    KAUST Repository

    Kaloni, Thaneshwor P.

    2014-01-09

    Based on first-principles calculations, we demonstrate that Co-decorated silicene can host a quantum anomalous Hall state. The exchange field induced by the Co atoms combined with the strong spin-orbit coupling of the silicene opens a nontrivial band gap at the K point. As compared to other transition metals, Co-decorated silicene is unique in this respect, since usually hybridization and spin-polarization induced in the silicene suppress a quantum anomalous Hall state.

  20. Anomalous effects of dense matter under rotation

    Science.gov (United States)

    Huang, Xu-Guang; Nishimura, Kentaro; Yamamoto, Naoki

    2018-02-01

    We study the anomaly induced effects of dense baryonic matter under rotation. We derive the anomalous terms that account for the chiral vortical effect in the low-energy effective theory for light Nambu-Goldstone modes. The anomalous terms lead to new physical consequences, such as the anomalous Hall energy current and spontaneous generation of angular momentum in a magnetic field (or spontaneous magnetization by rotation). In particular, we show that, due to the presence of such anomalous terms, the ground state of the quantum chromodynamics (QCD) under sufficiently fast rotation becomes the "chiral soliton lattice" of neutral pions that has lower energy than the QCD vacuum and nuclear matter. We briefly discuss the possible realization of the chiral soliton lattice induced by a fast rotation in noncentral heavy ion collisions.

  1. Hall effect in hopping regime

    Energy Technology Data Exchange (ETDEWEB)

    Avdonin, A., E-mail: avdonin@ifpan.edu.pl [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa (Poland); Skupiński, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa (Poland); Grasza, K. [Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa (Poland); Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warszawa (Poland)

    2016-02-15

    A simple description of the Hall effect in the hopping regime of conductivity in semiconductors is presented. Expressions for the Hall coefficient and Hall mobility are derived by considering averaged equilibrium electron transport in a single triangle of localization sites in a magnetic field. Dependence of the Hall coefficient is analyzed in a wide range of temperature and magnetic field values. Our theoretical result is applied to our experimental data on temperature dependence of Hall effect and Hall mobility in ZnO. - Highlights: • Expressions for Hall coefficient and mobility for hopping conductivity are derived. • Theoretical result is compared with experimental curves measured on ZnO. • Simultaneous action of free and hopping conduction channels is considered. • Non-linearity of hopping Hall coefficient is predicted.

  2. Planar Hall Effect MRAM

    OpenAIRE

    Bason, Y.; Klein, L.; Yau, J. -B.; Hong, X.; Hoffman, J.; Ahn, C. H.

    2005-01-01

    We suggest a new type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than currently developed MRAM that is based on magnetoresistance tunnel junctions (MTJ), with the tunnel junction structure being replaced by a single layer film.

  3. Spin Hall effect devices

    Czech Academy of Sciences Publication Activity Database

    Jungwirth, Tomáš; Wunderlich, Joerg; Olejník, Kamil

    2012-01-01

    Roč. 11, č. 5 (2012), s. 382-390 ISSN 1476-1122 EU Projects: European Commission(XE) 268066 - 0MSPIN; European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : spin Hall effect * spintronics * spin transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 35.749, year: 2012

  4. Spin Hall effect

    Czech Academy of Sciences Publication Activity Database

    Sinova, Jairo; Valenzuela, O.V.; Wunderlich, Joerg; Back, C.H.; Jungwirth, Tomáš

    2015-01-01

    Roč. 87, č. 4 (2015), s. 1213-1259 ISSN 0034-6861 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : spin Hall effect * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 33.177, year: 2015

  5. Realization of the Axion Insulator State in Quantum Anomalous Hall Sandwich Heterostructures

    Science.gov (United States)

    Xiao, Di; Jiang, Jue; Shin, Jae-Ho; Wang, Wenbo; Wang, Fei; Zhao, Yi-Fan; Liu, Chaoxing; Wu, Weida; Chan, Moses H. W.; Samarth, Nitin; Chang, Cui-Zu

    2018-02-01

    The "magnetoelectric effect" arises from the coupling between magnetic and electric properties in materials. The Z2 invariant of topological insulators (TIs) leads to a quantized version of this phenomenon, known as the topological magnetoelectric (TME) effect. This effect can be realized in a new topological phase called an "axion insulator" whose surface states are all gapped but the interior still obeys time reversal symmetry. We demonstrate such a phase using electrical transport measurements in a quantum anomalous Hall (QAH) sandwich heterostructure, in which two compositionally different magnetic TI layers are separated by an undoped TI layer. Magnetic force microscopy images of the same sample reveal sequential magnetization reversals of the top and bottom layers at different coercive fields, a consequence of the weak interlayer exchange coupling due to the spacer. When the magnetization is antiparallel, both the Hall resistance and Hall conductance show zero plateaus, accompanied by a large longitudinal resistance and vanishing longitudinal conductance, indicating the realization of an axion insulator state. Our findings thus show evidence for a phase of matter distinct from the established QAH state and provide a promising platform for the realization of the TME effect.

  6. Hall effects and related phenomena in disordered Rashba 2DEG

    International Nuclear Information System (INIS)

    Inoue, Jun-ichiro; Kato, Takashi; Bauer, Gerrit E W; Molenkamp, Laurens W

    2009-01-01

    We review our recent work on the spin and anomalous Hall effects and other related phenomena caused by the intrinsic spin–orbit interaction. We focus our attention on disorder effects on these transport properties by adopting a model of a two-dimensional electron gas with a Rashba-type spin–orbit interaction. A spin-polarized model is adopted to calculate the anomalous Hall effect and anisotropic magnetoresistance. It is shown that the spin Hall conductivity in the ballistic transport regime is cancelled by the so-called vertex corrections for the disorder scattering, and that the anomalous Hall conductivity and anisotropic magnetoresistance vanish unless the lifetime is spin dependent. We further present results on spin accumulation under an electric field

  7. Anomalous field dependence of the Hall coefficient in disordered metals

    International Nuclear Information System (INIS)

    Tousson, E.; Ovadyahu, Z.

    1988-01-01

    We report on a comprehensive study of the Hall coefficient, R/sub H/, in disordered three-dimensional In 2 O/sub 3-//sub x/ films as a function of the magnetic field strength, temperature, and degree of spatial disorder. Our main result is that, at sufficiently small fields, R/sub H/ is virtually temperature, field, and disorder independent, even at the metal-insulator transition itself. On the other hand, at the limit of strong magnetic fields, R/sub H/ has an explicit temperature dependence, in apparent agreement with the prediction of Al'tshuler, Aronov, and Lee. For intermediate values of fields, R/sub H/ is field and temperature dependent. It is also shown that the behavior of the conductivity as a function of temperature, σ(T), at small fields, is qualitatively different than that measured at the limit of strong magnetic fields. The low- and high-field regimes seem to correlate with the respective regimes in terms of the Hall-coefficient behavior. It is suggested that the magnetotransport in the high-field limit is considerably influenced by Coulomb-correlation effects. However, in the low-field regime, where both correlations and weak-localization effects are, presumably, equally important (and where both theories are the more likely to be valid), is problematic; neither R/sub H/ nor σ(T) gives any unambiguous evidence to the existence of interaction effects. This problem is discussed in light of the experimental results pertaining to the behavior of R/sub H/(T) in two-dimensional In 2 O/sub 3-//sub x/ films as well as in other disordered systems

  8. Spin Hall effect transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, Joerg; Park, B.G.; Irvine, A.C.; Zarbo, Liviu; Rozkotová, E.; Němec, P.; Novák, Vít; Sinova, Jairo; Jungwirth, Tomáš

    2010-01-01

    Roč. 330, č. 6012 (2010), s. 1801-1804 ISSN 0036-8075 R&D Projects: GA AV ČR KAN400100652; GA MŠk LC510 EU Projects: European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : spin Hall effect * spintronics * spin transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 31.364, year: 2010

  9. Absence of skew scattering in two-dimensional systems: testing the origins of the anomalous Hall effec

    Czech Academy of Sciences Publication Activity Database

    Borunda, M.; Nunner, T.S.; Lück, T.; Sinitsyn, N. A.; Timm, C.; Wunderlich, J.; Jungwirth, Tomáš; MacDonald, A. H.; Sinova, J.

    2007-01-01

    Roč. 99, č. 6 (2007), 066604/1-066604/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/05/0575; GA ČR GEFON/06/E002; GA MŠk LC510 Institutional research plan: CEZ:AV0Z10100521 Keywords : anomalous Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 6.944, year: 2007

  10. Spin hall effect associated with SU(2) gauge field

    Science.gov (United States)

    Tao, Y.

    2010-01-01

    In this paper, we focus on the connection between spin Hall effect and spin force. Here we investigate that the spin force due to spin-orbit coupling, which, in two-dimensional system, is equivalent to forces of Hirsch and Chudnovsky besides constant factors 3 and frac{3}{2} respectively, is a part of classic Anandan force, and that the spin Hall effect is an anomalous Hall effect. Furthermore, we develop the method of AC phase to derive the expression for the spin force, and note that the most basic spin Hall effect indeed originate from the AC phase and is therefore an intrinsic quantum mechanical property of spin. This method differs from approach of Berry phase in the study of anomalous Hall effect , which is the intrinsic property of the perfect crystal. On the other hand, we use an elegant skill to show that the Chudnovsky-Drude model is reasonable. Here we have improved the theoretical values of spin Hall conductivity of Chudnovsky. Compared to the theoretical values of spin Hall conductivity in the Chudnovsky-Drude model, ours are in better agreement with experimentation. Finally, we discuss the relation between spin Hall effect and fractional statistics.

  11. Spin-charge separation and anomalous correlation functions in the edge states of quantum hall liquids

    CERN Document Server

    Lee, H C

    1998-01-01

    First, we have investigated chiral edges of a quantum Hall liquids at filling factor nu=2. The separation of spin and charge degrees of freedom becomes manifest in the presence of long- range Coulomb interaction. Due to the spin-charge separation the tunneling density of states takes the form D(omega) approx ( -lnl omega l) sup 1 sup / sup 2. Experimentally, the spin-charge separation can be revealed in the temperature and voltage dependence of the tunneling current into Fermi liquid reservoir. Second, the charge and spin correlation functions of partially spin-polarized edge electrons of a quantum Hall bar are studied using effective Hamiltonian and bosonization techniques. In the presence of the Coulomb interaction between the edges with opposite chirality we find a different crossover behavior in spin and charge correlation functions. The crossover of the spin correlation function in the Coulomb dominated regime is characterized by an anomalous exponent, which originates from the finite value of the effect...

  12. Hall Effect Gyrators and Circulators

    Science.gov (United States)

    Viola, Giovanni; DiVincenzo, David P.

    2014-04-01

    The electronic circulator and its close relative the gyrator are invaluable tools for noise management and signal routing in the current generation of low-temperature microwave systems for the implementation of new quantum technologies. The current implementation of these devices using the Faraday effect is satisfactory but requires a bulky structure whose physical dimension is close to the microwave wavelength employed. The Hall effect is an alternative nonreciprocal effect that can also be used to produce desired device functionality. We review earlier efforts to use an Ohmically contacted four-terminal Hall bar, explaining why this approach leads to unacceptably high device loss. We find that capacitive coupling to such a Hall conductor has much greater promise for achieving good circulator and gyrator functionality. We formulate a classical Ohm-Hall analysis for calculating the properties of such a device, and show how this classical theory simplifies remarkably in the limiting case of the Hall angle approaching 90°. In this limit, we find that either a four-terminal or a three-terminal capacitive device can give excellent circulator behavior, with device dimensions far smaller than the ac wavelength. An experiment is proposed to achieve GHz-band gyration in millimeter (and smaller) scale structures employing either semiconductor heterostructure or graphene Hall conductors. An inductively coupled scheme for realizing a Hall gyrator is also analyzed.

  13. Hall Effect Gyrators and Circulators

    Directory of Open Access Journals (Sweden)

    Giovanni Viola

    2014-05-01

    Full Text Available The electronic circulator and its close relative the gyrator are invaluable tools for noise management and signal routing in the current generation of low-temperature microwave systems for the implementation of new quantum technologies. The current implementation of these devices using the Faraday effect is satisfactory but requires a bulky structure whose physical dimension is close to the microwave wavelength employed. The Hall effect is an alternative nonreciprocal effect that can also be used to produce desired device functionality. We review earlier efforts to use an Ohmically contacted four-terminal Hall bar, explaining why this approach leads to unacceptably high device loss. We find that capacitive coupling to such a Hall conductor has much greater promise for achieving good circulator and gyrator functionality. We formulate a classical Ohm-Hall analysis for calculating the properties of such a device, and show how this classical theory simplifies remarkably in the limiting case of the Hall angle approaching 90°. In this limit, we find that either a four-terminal or a three-terminal capacitive device can give excellent circulator behavior, with device dimensions far smaller than the ac wavelength. An experiment is proposed to achieve GHz-band gyration in millimeter (and smaller scale structures employing either semiconductor heterostructure or graphene Hall conductors. An inductively coupled scheme for realizing a Hall gyrator is also analyzed.

  14. Observation of the Quantum-Anomalous-Hall Insulator to Anderson Insulator Quantum Phase Transition in Magnetic Topological Insulators

    Science.gov (United States)

    Chang, Cui-Zu; Zhao, Wei-Wei; Li, Jian; Jain, J. K.; Liu, Chaoxing; Moodera, Jagadeesh S.; Chan, Moses H. W.

    The quantum anomalous Hall (QAH) effect can be considered as the quantum Hall (QH) effect without external magnetic field, which can be realized by time reversal symmetry breaking in a topologically non-trivial system, and in thin films of magnetically-doped TI. A QAH system carries spin-polarized dissipationless chiral edge transport channels without the need for external energy input, hence may have huge impact on future electronic and spintronic device applications for ultralow-power consumption. The observation of QAH effect has opened up exciting new physics and thus understanding the physical nature of this novel topological quantum state, can lead to a rapid development of this field. In this talk, we will report our recent progress about the experimental observation of a quantum phase transition from a quantum-anomalous-Hall (QAH) insulator to an Anderson insulator by tuning the chemical potential, and finally discuss the existence of scaling behavior for this quantum phase transition. Work Supported by funding from NSF (DMR-1207469), NSF (DMR-0819762) (MIT MRSEC), ONR (N00014-13-1-0301), and the STC Center for Integrated Quantum Materials under NSF Grant DMR-1231319.

  15. Gauge invariance and fractional quantized Hall effect

    International Nuclear Information System (INIS)

    Tao, R.; Wu, Y.S.

    1984-01-01

    It is shown that gauge invariance arguments imply the possibility of fractional quantized Hall effect; the Hall conductance is accurately quantized to a rational value. The ground state of a system showing the fractional quantized Hall effect must be degenerate; the non-degenerate ground state can only produce the integral quantized Hall effect. 12 references

  16. Tunable current partition at zero-line intersection of quantum anomalous Hall topologies

    Science.gov (United States)

    Ren, Yafei; Zeng, Junjie; Wang, Ke; Xu, Fuming; Qiao, Zhenhua

    2017-10-01

    At the interface between two-dimensional materials with different topologies, topologically protected one-dimensional states (also named zero-line modes) arise. Here, we focus on the quantum anomalous Hall-effect-based zero-line modes formed at the interface between regimes with different Chern numbers. We find that these zero-line modes are chiral and unilaterally conductive due to the breaking of time-reversal invariance. For a beam splitter consisting of two intersecting zero lines, the chirality ensures that a current can only be injected from two of the four terminals. Our numerical results further show that, in the absence of contact resistance, the (anti-)clockwise partitions of the currents from these two terminals are the same owing to the current conservation, which effectively simplifies the partition laws. We find that the partition is robust against the relative shift of Fermi energy but can be adjusted effectively by tuning the relative magnetization strengths at different regimes or relative angles between zero lines.

  17. ac spin-Hall effect

    International Nuclear Information System (INIS)

    Entin-Wohlman, O.

    2005-01-01

    Full Text:The spin-Hall effect is described. The Rashba and Dresselhaus spin-orbit interactions are both shown to yield the low temperature spin-Hall effect for strongly localized electrons coupled to phonons. A frequency-dependent electric field E(ω) generates a spin-polarization current, normal to E, due to interference of hopping paths. At zero temperature the corresponding spin-Hall conductivity is real and is proportional to ω 2 . At non-zero temperatures the coupling to the phonons yields an imaginary term proportional to ω. The interference also yields persistent spin currents at thermal equilibrium, at E = 0. The contributions from the Dresselhaus and Rashba interactions to the interference oppose each other

  18. Topological Hall and spin Hall effects in disordered skyrmionic textures

    KAUST Repository

    Ndiaye, Papa Birame

    2017-02-24

    We carry out a thorough study of the topological Hall and topological spin Hall effects in disordered skyrmionic systems: the dimensionless (spin) Hall angles are evaluated across the energy-band structure in the multiprobe Landauer-Büttiker formalism and their link to the effective magnetic field emerging from the real-space topology of the spin texture is highlighted. We discuss these results for an optimal skyrmion size and for various sizes of the sample and find that the adiabatic approximation still holds for large skyrmions as well as for nanoskyrmions. Finally, we test the robustness of the topological signals against disorder strength and show that the topological Hall effect is highly sensitive to momentum scattering.

  19. Enhancement in anomalous Hall resistivity of Co/Pd multilayer and CoPd alloy by Ga+ ion irradiation

    KAUST Repository

    Guo, Zaibing

    2014-02-01

    In this paper, we report the effect of Ga+ ion irradiation on anomalous Hall effect (AHE) and longitudinal resistivity (ρxx) in [Co(3 Å)/Pd(5 Å)]80 multilayer and Co 42Pd58 alloy. 4- and 2-fold increases in anomalous Hall resistivity (ρAH) in the Co/Pd multilayer and CoPd alloy have been observed after irradiations at doses of 2.4 × 1015 and 3.3×10 15 ions/cm2, respectively. Skew scattering and side jump contributions to AHE have been analyzed based on the scaling relationship ρAH = aρxx + bρ2xx. For the Co/Pd multilayer, AHE is mainly affected by ion irradiation-induced interface diffusion and defects. For the CoPd alloy, the increase in doses above 1.5 × 1015 ions/cm2 induces a sign change in skew scattering, followed by the skew scattering contribution to AHE overwhelming the side jump contribution, this phenomenon should be attributed to irradiation-induced defects and modifications in chemical ordering. © Copyright EPLA, 2014.

  20. Role of helical edge modes in the chiral quantum anomalous Hall state.

    Science.gov (United States)

    Mani, Arjun; Benjamin, Colin

    2018-01-22

    Although indications are that a single chiral quantum anomalous Hall(QAH) edge mode might have been experimentally detected. There have been very many recent experiments which conjecture that a chiral QAH edge mode always materializes along with a pair of quasi-helical quantum spin Hall (QSH) edge modes. In this work we deal with a substantial 'What If?' question- in case the QSH edge modes, from which these QAH edge modes evolve, are not topologically-protected then the QAH edge modes wont be topologically-protected too and thus unfit for use in any applications. Further, as a corollary one can also ask if the topological-protection of QSH edge modes does not carry over during the evolution process to QAH edge modes then again our 'What if?' scenario becomes apparent. The 'how' of the resolution of this 'What if?' conundrum is the main objective of our work. We show in similar set-ups affected by disorder and inelastic scattering, transport via trivial QAH edge mode leads to quantization of Hall resistance and not that via topological QAH edge modes. This perhaps begs a substantial reinterpretation of those experiments which purported to find signatures of chiral(topological) QAH edge modes albeit in conjunction with quasi helical QSH edge modes.

  1. The Other Hall Effect: College Board Physics

    Science.gov (United States)

    Sheppard, Keith; Gunning, Amanda M.

    2013-01-01

    Edwin Herbert Hall (1855-1938), discoverer of the Hall effect, was one of the first winners of the AAPT Oersted Medal for his contributions to the teaching of physics. While Hall's role in establishing laboratory work in high schools is widely acknowledged, his position as chair of the physics section of the Committee on College Entrance…

  2. Spin Hall effect and spin swapping in diffusive superconductors

    Science.gov (United States)

    Espedal, Camilla; Lange, Peter; Sadjina, Severin; Mal'shukov, A. G.; Brataas, Arne

    2017-02-01

    We consider the spin-orbit-induced spin Hall effect and spin swapping in diffusive superconductors. By employing the nonequilibrium Keldysh Green's function technique in the quasiclassical approximation, we derive coupled transport equations for the spectral spin and particle distributions and for the energy density in the elastic scattering regime. We compute four contributions to the spin Hall conductivity, namely, skew scattering, side jump, anomalous velocity, and the Yafet contribution. The reduced density of states in the superconductor causes a renormalization of the spin Hall angle. We demonstrate that all four of these contributions to the spin Hall conductivity are renormalized in the same way in the superconducting state. In its simplest manifestation, spin swapping transforms a primary spin current into a secondary spin current with swapped current and polarization directions. We find that the spin-swapping coefficient is not explicitly but only implicitly affected by the superconducting gap through the renormalized diffusion coefficients. We discuss experimental consequences for measurements of the (inverse) spin Hall effect and spin swapping in four-terminal geometries. In our geometry, below the superconducting transition temperature, the spin-swapping signal is increased an order of magnitude while changes in the (inverse) spin Hall signal are moderate.

  3. Quantum anomalous Hall phase in a one-dimensional optical lattice

    Science.gov (United States)

    Liu, Sheng; Shao, L. B.; Hou, Qi-Zhe; Xue, Zheng-Yuan

    2018-03-01

    We propose to simulate and detect quantum anomalous Hall phase with ultracold atoms in a one-dimensional optical lattice, with the other synthetic dimension being realized by modulating spin-orbit coupling. We show that the system manifests a topologically nontrivial phase with two chiral edge states which can be readily detected in this synthetic two-dimensional system. Moreover, it is interesting that at the phase transition point there is a flat energy band and this system can also be in a topologically nontrivial phase with two Fermi zero modes existing at the boundaries by considering the synthetic dimension as a modulated parameter. We also show how to measure these topological phases experimentally in ultracold atoms. Another model with a random Rashba and Dresselhaus spin-orbit coupling strength is also found to exhibit topological nontrivial phase, and the impact of the disorder to the system is revealed.

  4. Hall-effect arc protector

    Science.gov (United States)

    Rankin, R.A.; Kotter, D.K.

    1997-05-13

    The Hall-Effect Arc Protector is used to protect sensitive electronics from high energy arcs. The apparatus detects arcs by monitoring an electrical conductor, of the instrument, for changes in the electromagnetic field surrounding the conductor which would be indicative of a possible arcing condition. When the magnitude of the monitored electromagnetic field exceeds a predetermined threshold, the potential for an instrument damaging are exists and the control system logic activates a high speed circuit breaker. The activation of the breaker shunts the energy imparted to the input signal through a dummy load to the ground. After the arc condition is terminated, the normal signal path is restored. 2 figs.

  5. Magnetic effects in anomalous dispersion

    International Nuclear Information System (INIS)

    Blume, M.

    1992-01-01

    Spectacular enhancements of magnetic x-ray scattering have been predicted and observed experimentally. These effects are the result of resonant phenomena closely related to anomalous dispersion, and they are strongest at near-edge resonances. The theory of these resonances will be developed with particular attention to the symmetry properties of the scatterer. While the phenomena to be discussed concern magnetic properties the transitions are electric dipole or electric quadrupole in character and represent a subset of the usual anomalous dispersion phenomena. The polarization dependence of the scattering is also considered, and the polarization dependence for magnetic effects is related to that for charge scattering and to Templeton type anisotropic polarization phenomena. It has been found that the strongest effects occur in rare-earths and in actinides for M shell edges. In addition to the scattering properties the theory is applicable to ''forward scattering'' properties such as the Faraday effect and circular dichroism

  6. Spin Hall effect by surface roughness

    KAUST Repository

    Zhou, Lingjun

    2015-01-08

    The spin Hall and its inverse effects, driven by the spin orbit interaction, provide an interconversion mechanism between spin and charge currents. Since the spin Hall effect generates and manipulates spin current electrically, to achieve a large effect is becoming an important topic in both academia and industries. So far, materials with heavy elements carrying a strong spin orbit interaction, provide the only option. We propose here a new mechanism, using the surface roughness in ultrathin films, to enhance the spin Hall effect without heavy elements. Our analysis based on Cu and Al thin films suggests that surface roughness is capable of driving a spin Hall angle that is comparable to that in bulk Au. We also demonstrate that the spin Hall effect induced by surface roughness subscribes only to the side-jump contribution but not the skew scattering. The paradigm proposed in this paper provides the second, not if only, alternative to generate a sizable spin Hall effect.

  7. Planar Hall effect bridge magnetic field sensors

    DEFF Research Database (Denmark)

    Henriksen, A.D.; Dalslet, Bjarke Thomas; Skieller, D.H.

    2010-01-01

    Until now, the planar Hall effect has been studied in samples with cross-shaped Hall geometry. We demonstrate theoretically and experimentally that the planar Hall effect can be observed for an exchange-biased ferromagnetic material in a Wheatstone bridge topology and that the sensor signal can...... be significantly enhanced by a geometric factor. For the samples in the present study, we demonstrate an enhancement of the sensor output by a factor of about 100 compared to cross-shaped sensors. The presented construction opens a new design and application area of the planar Hall effect, which we term planar...

  8. Anomalous transport phenomena in px+i py superconductors

    Science.gov (United States)

    Li, Songci; Andreev, A. V.; Spivak, B. Z.

    2015-09-01

    Spontaneous breaking of time-reversal symmetry in superconductors with the px+i py symmetry of the order parameter allows for a class of effects which are analogous to the anomalous Hall effect in ferromagnets. These effects exist below the critical temperature, T effects. In particular, we consider anomalous Hall thermal conductivity, the polar Kerr effect, the anomalous Hall effect, and the anomalous photo- and acousto-galvanic effects.

  9. Mesoscopic effects in the quantum Hall regime

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 58; Issue 2 ... Mesoscopic effects; quantum Hall transitions; finite-size scaling. ... When band mixing between multiple Landau levels is present, mesoscopic effects cause a crossover from a sequence of quantum Hall transitions for weak disorder to classical behavior ...

  10. Quantum Hall effect in quantum electrodynamics

    International Nuclear Information System (INIS)

    Penin, Alexander A.

    2009-01-01

    We consider the quantum Hall effect in quantum electrodynamics and find a deviation from the quantum-mechanical prediction for the Hall conductivity due to radiative antiscreening of electric charge in an external magnetic field. A weak dependence of the universal von Klitzing constant on the magnetic field strength, which can possibly be observed in a dedicated experiment, is predicted

  11. Theory of spin Hall effect

    OpenAIRE

    Chudnovsky, Eugene M.

    2007-01-01

    An extension of Drude model is proposed that accounts for spin and spin-orbit interaction of charge carriers. Spin currents appear due to combined action of the external electric field, crystal field and scattering of charge carriers. The expression for spin Hall conductivity is derived for metals and semiconductors that is independent of the scattering mechanism. In cubic metals, spin Hall conductivity $\\sigma_s$ and charge conductivity $\\sigma_c$ are related through $\\sigma_s = [2 \\pi \\hbar...

  12. The quantum Hall effects: Philosophical approach

    Science.gov (United States)

    Lederer, P.

    2015-05-01

    The Quantum Hall Effects offer a rich variety of theoretical and experimental advances. They provide interesting insights on such topics as gauge invariance, strong interactions in Condensed Matter physics, emergence of new paradigms. This paper focuses on some related philosophical questions. Various brands of positivism or agnosticism are confronted with the physics of the Quantum Hall Effects. Hacking's views on Scientific Realism, Chalmers' on Non-Figurative Realism are discussed. It is argued that the difficulties with those versions of realism may be resolved within a dialectical materialist approach. The latter is argued to provide a rational approach to the phenomena, theory and ontology of the Quantum Hall Effects.

  13. Spin Hall effect, Hall effect and spin precession in diffusive normal metals

    OpenAIRE

    Shchelushkin, R. V.; Brataas, Arne

    2005-01-01

    We study transport in normal metals in an external magnetic field. This system exhibits an interplay between a transverse spin imbalance (spin Hall effect) caused by the spin-orbit interaction, a Hall effect via the Lorentz force, and spin precession due to the Zeeman effect. Diffusion equations for spin and charge flow are derived. The spin and charge accumulations are computed numerically in experimentally relevant thin film geometries. The out-of-plane spin Hall potential is suppressed whe...

  14. Hall effect in organic layered conductors

    Directory of Open Access Journals (Sweden)

    R.A.Hasan

    2006-01-01

    Full Text Available The Hall effect in organic layered conductors with a multisheeted Fermi surfaces was considered. It is shown that the experimental study of Hall effect and magnetoresistance anisotropy at different orientations of current and a quantizing magnetic field relative to the layers makes it possible to determine the contribution of various charge carriers groups to the conductivity, and to find out the character of Fermi surface anisotropy in the plane of layers.

  15. Extrinsic spin Hall effect in graphene

    Science.gov (United States)

    Rappoport, Tatiana

    The intrinsic spin-orbit coupling in graphene is extremely weak, making it a promising spin conductor for spintronic devices. In addition, many applications also require the generation of spin currents in graphene. Theoretical predictions and recent experimental results suggest one can engineer the spin Hall effect in graphene by greatly enhancing the spin-orbit coupling in the vicinity of an impurity. The extrinsic spin Hall effect then results from the spin-dependent skew scattering of electrons by impurities in the presence of spin-orbit interaction. This effect can be used to efficiently convert charge currents into spin-polarized currents. I will discuss recent experimental results on spin Hall effect in graphene decorated with adatoms and metallic cluster and show that a large spin Hall effect can appear due to skew scattering. While this spin-orbit coupling is small if compared with what it is found in metals, the effect is strongly enhanced in the presence of resonant scattering, giving rise to robust spin Hall angles. I will present our single impurity scattering calculations done with exact partial-wave expansions and complement the analysis with numerical results from a novel real-space implementation of the Kubo formalism for tight-binding Hamiltonians. The author acknowledges the Brazilian agencies CNPq, CAPES, FAPERJ and INCT de Nanoestruturas de Carbono for financial support.

  16. The Two-Dimensional MnO2/Graphene Interface: Half-metallicity and Quantum Anomalous Hall State

    KAUST Repository

    Gan, Liyong

    2015-10-07

    We explore the electronic properties of the MnO2/graphene interface by first-principles calculations, showing that MnO2 becomes half-metallic. MnO2 in the MnO2/graphene/MnO2 system provides time-reversal and inversion symmetry breaking. Spin splitting by proximity occurs at the Dirac points and a topologically nontrivial band gap is opened, enabling a quantum anomalous Hall state. The half-metallicity, spin splitting, and size of the band gap depend on the interfacial interaction, which can be tuned by strain engineering.

  17. Field theory approach to quantum hall effect

    International Nuclear Information System (INIS)

    Cabo, A.; Chaichian, M.

    1990-07-01

    The Fradkin's formulation of statistical field theory is applied to the Coulomb interacting electron gas in a magnetic field. The electrons are confined to a plane in normal 3D-space and also interact with the physical 3D-electromagnetic field. The magnetic translation group (MTG) Ward identities are derived. Using them it is shown that the exact electron propagator is diagonalized in the basis of the wave functions of the free electron in a magnetic field whenever the MTG is unbroken. The general tensor structure of the polarization operator is obtained and used to show that the Chern-Simons action always describes the Hall effect properties of the system. A general proof of the Streda formula for the Hall conductivity is presented. It follows that the coefficient of the Chern-Simons terms in the long-wavelength approximation is exactly given by this relation. Such a formula, expressing the Hall conductivity as a simple derivative, in combination with diagonal form of the full propagator allows to obtain a simple expressions for the filling factor and the Hall conductivity. Indeed, these results, after assuming that the chemical potential lies in a gap of the density of states, lead to the conclusion that the Hall conductivity is given without corrections by σ xy = νe 2 /h where ν is the filling factor. In addition it follows that the filling factor is independent of the magnetic field if the chemical potential remains in the gap. (author). 21 ref, 1 fig

  18. Anomalous Nernst effect in type-II Weyl semimetals

    Science.gov (United States)

    Saha, Subhodip; Tewari, Sumanta

    2018-01-01

    Topological Weyl semimetals (WSM), a new state of quantum matter with gapless nodal bulk spectrum and open Fermi arc surface states, have recently sparked enormous interest in condensed matter physics. Based on the symmetry and fermiology, it has been proposed that WSMs can be broadly classified into two types, type-I and type-II Weyl semimetals. While the undoped, conventional, type-I WSMs have point like Fermi surface and vanishing density of states (DOS) at the Fermi energy, the type-II Weyl semimetals break Lorentz symmetry explicitly and have tilted conical spectra with electron and hole pockets producing finite DOS at the Fermi level. The tilted conical spectrum and finite DOS at Fermi level in type-II WSMs have recently been shown to produce interesting effects such as a chiral anomaly induced longitudinal magnetoresistance that is strongly anisotropic in direction and a novel anomalous Hall effect. In this work, we consider the anomalous Nernst effect in type-II WSMs in the absence of an external magnetic field using the framework of semi-classical Boltzmann theory. Based on both a linearized model of time-reversal breaking WSM with a higher energy cut-off and a more realistic lattice model, we show that the anomalous Nernst response in these systems is strongly anisotropic in space, and can serve as a reliable signature of type-II Weyl semimetals in a host of magnetic systems with spontaneously broken time reversal symmetry.

  19. Surprises from the spin Hall effect

    Czech Academy of Sciences Publication Activity Database

    Sinova, Jairo; Jungwirth, Tomáš

    2017-01-01

    Roč. 70, č. 7 (2017), s. 39-42 ISSN 0031-9228 Institutional support: RVO:68378271 Keywords : spintronics * spin Hall effect * magnetic recording Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 4.188, year: 2016

  20. line wear debris hall effect sensor

    African Journals Online (AJOL)

    USER

    2013-07-02

    Jul 2, 2013 ... environmental monitoring/control, use of low noise electronic components and method of opposing environmental ... Keywords: Hall Effect, sensor, noise reduction, hysteresis, temperature dependent drift, stability, full scale deflection, ... must conform to available standards and the characteristics must be.

  1. Spin Hall effect on a noncommutative space

    International Nuclear Information System (INIS)

    Ma Kai; Dulat, Sayipjamal

    2011-01-01

    We study the spin-orbital interaction and the spin Hall effect of an electron moving on a noncommutative space under the influence of a vector potential A(vector sign). On a noncommutative space, we find that the commutator between the vector potential A(vector sign) and the electric potential V 1 (r(vector sign)) of the lattice induces a new term, which can be treated as an effective electric field, and the spin Hall conductivity obtains some correction. On a noncommutative space, the spin current and spin Hall conductivity have distinct values in different directions, and depend explicitly on the noncommutative parameter. Once this spin Hall conductivity in different directions can be measured experimentally with a high level of accuracy, the data can then be used to impose bounds on the value of the space noncommutativity parameter. We have also defined a new parameter, σ=ρθ (ρ is the electron concentration, θ is the noncommutativity parameter), which can be measured experimentally. Our approach is based on the Foldy-Wouthuysen transformation, which gives a general Hamiltonian of a nonrelativistic electron moving on a noncommutative space.

  2. Theory of fractional quantum hall effect

    International Nuclear Information System (INIS)

    Kostadinov, I.Z.

    1985-08-01

    A theory of the Fractional Quantum Hall Effect is constructed based on magnetic flux fractionization, which lead to instability of the system against selfcompression. A theorem is proved stating that arbitrary potentials fail to lift a specific degeneracy of the Landau level. For the case of 1/3 fractional filling a model 3-particles interaction is constructed breaking the symmetry. The rigid 3-particles wave function plays the role of order parameter. In a BCS type of theory the gap in the single particles spectrum is produced by the 3-particles interaction. The mean field critical behaviour and critical parameters are determined as well as the Ginsburg-Landau equation coefficients. The Hall conductivity is calculated from the first principles and its temperature dependence is found. The simultaneous tunnelling of 3,5,7 etc. electrons and quantum interference effects are predicted. (author)

  3. Anomalous hydrodynamics in two dimensions

    Indian Academy of Sciences (India)

    Keywords. Anomalous hydrodynamics; gauge anomaly; gravitational anomaly. PACS No. 47.10.ab. The chiral anomaly has played a ubiquitous role in modern physics. It has found appli- cations in several diverse fields like quantum wires, quantum Hall effect, chiral magnetic effect and anomalous hydrodynamics, to name ...

  4. Optically induced Hall effect in semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Idrish Miah, M; Gray, E Mac A, E-mail: m.miah@griffith.edu.a [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)

    2009-03-01

    We describe an experiment which investigates the effect of a longitudinal electric field on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a Hall voltage resulting from nonequilibrium magnetization induced by the spin-carrier electrons accumulating at the transverse boundaries of the sample as a result of asymmetries in scattering for spin-up and spin-down electrons in the presence of spin-orbit interaction. It is found that the effect depends on the longitudinal electric field and doping density as well as on temperature. The results are presented by discussing the dominant spin relaxation mechanisms in semiconductors.

  5. Hall effect and the magnetotransport properties of Co2MnSi1-xAlx Heusler alloys

    Science.gov (United States)

    Prestigiacomo, Joseph C.; Young, David P.; Adams, Philip W.; Stadler, Shane

    2014-01-01

    We have investigated the transport properties of the quaternary Heusler alloys Co2MnSi1-xAlx (0≤x≤1), which have been theoretically predicted to develop a half-metallic band structure as x →0. Resistivity versus temperature measurements as a function of Al concentration (x) revealed a systematic reduction in the residual resistivity ratio as well as a transition from weakly localized to half-metallic conduction as x →0. From measurements of the ordinary and anomalous Hall effects, the charge carrier concentration was found to increase, while the anomalous Hall coefficient decreased by nearly an order of magnitude with each sample as x →0 (Δx=0.25.). Scaling of the anomalous Hall effect with longitudinal resistivity reveals that both the skew-scattering and intrinsic contributions grow quickly as x →1, indicating that disorder and band-structure effects cause the large anomalous Hall effect magnitudes observed for Co2MnAl.

  6. Fractional quantization and the quantum hall effect

    International Nuclear Information System (INIS)

    Guerrero, J.; Calixto, M.; Aldaya, V.

    1998-01-01

    Quantization with constrains is considered in a group-theoretical framework, providing a precise characterization of the set of good operators, i.e., those preserving the constrained Hilbert space, in terms of the representation of the subgroup of constraints. This machinery is applied to the quantization of the torus as symplectic manifold, obtaining that fractional quantum numbers are permitted, provided that we allow for vector valued representations. The good operators turn out to be the Wilson loops and, for certain representations of the subgroup of constraints, the modular transformations. These results are applied to the Fractional Quantum Hall Effect, where interesting implications are derived

  7. Axial Hall effect and universality of holographic Weyl semi-metals

    Energy Technology Data Exchange (ETDEWEB)

    Copetti, Christian; Fernández-Pendás, Jorge; Landsteiner, Karl [Instituto de Física Teórica UAM/CSIC,c/ Nicolás Cabrera 13-15, Cantoblanco, 28049 Madrid (Spain)

    2017-02-28

    The holographic Weyl semimetal is a model of a strongly coupled topological semi-metal. A topological quantum phase transition separates a topological phase with non-vanishing anomalous Hall conductivity from a trivial state. We investigate how this phase transition depends on the parameters of the scalar potential (mass and quartic self coupling) finding that the quantum phase transition persists for a large region in parameter space. We then compute the axial Hall conductivity. The algebraic structure of the axial anomaly predicts it to be 1/3 of the electric Hall conductivity. We find that this holds once a non-trivial renormalization effect on the external axial gauge fields is taken into account. Finally we show that the phase transition also occurs in a top-down model based on a consistent truncation of type IIB supergravity.

  8. Inertial-Hall effect: the influence of rotation on the Hall conductivity

    Directory of Open Access Journals (Sweden)

    Julio E. Brandão

    2015-01-01

    Full Text Available Inertial effects play an important role in classical mechanics but have been largely overlooked in quantum mechanics. Nevertheless, the analogy between inertial forces on mass particles and electromagnetic forces on charged particles is not new. In this paper, we consider a rotating non-interacting planar two-dimensional electron gas with a perpendicular uniform magnetic field and investigate the effects of the rotation in the Hall conductivity. The rotation introduces a shift and a split in the Landau levels. As a consequence of the break of the degeneracy, the counting of the states fully occupied below the Fermi energy increases, tuning the Hall quantization steps. The rotation also changes the quantum Hall plateau widths. Additionally, we find the Hall quantization steps as a function of rotation at a fixed value of the magnetic field.

  9. Commemorative Symposium on the Hall Effect and its Applications

    CERN Document Server

    Westgate, C

    1980-01-01

    In 1879, while a graduate student under Henry Rowland at the Physics Department of The Johns Hopkins University, Edwin Herbert Hall discovered what is now universally known as the Hall effect. A symposium was held at The Johns Hopkins University on November 13, 1979 to commemorate the lOOth anniversary of the discovery. Over 170 participants attended the symposium which included eleven in­ vited lectures and three speeches during the luncheon. During the past one hundred years, we have witnessed ever ex­ panding activities in the field of the Hall effect. The Hall effect is now an indispensable tool in the studies of many branches of condensed matter physics, especially in metals, semiconductors, and magnetic solids. Various components (over 200 million!) that utilize the Hall effect have been successfully incorporated into such devices as keyboards, automobile ignitions, gaussmeters, and satellites. This volume attempts to capture the important aspects of the Hall effect and its applications. It includes t...

  10. Planar Hall Effect in Magnetic Conducting Oxides

    Science.gov (United States)

    Akouala, Christer Rajiv

    Magnetic semiconductors are of interest for use in non-volatile memory device read heads, magnetoresistive sensors, and other spintronic devices. Research in this area has mostly focused on generating magnetic semiconductors by doping non-magnetic semiconductors with magnetic ions. This work has instead taken advantage of the defectinduced magnetism in several semiconducting oxides. The planar Hall effect (PHE) is a phenomenon that can be used for characterizing magnetic semiconductors. Along with the anisotropic magnetoresistance (AMR), PHE has the potential to provide insight into the mechanism for magnetic behavior in magnetic conducting oxide thin films that are undoped. PHE has therefore been studied in undoped ZnO, SnO2, CdO, and CuO using magnetotransport and magnetometry techniques. The measurements included both AMR and PHE taken at various temperatures from 300 to 4.2K in a Quantum Design Physical Property Measurement System (QD-PPMS) and in a custom-built magnetotransport set-up. Complementary measurements include XRD, and resistivity measurements. Resistivity vs. temperature, Hall effect, and magnetoresistance measurements were performed in the PPMS. Magnetic hysteresis and magnetization vs. temperature were acquired using a Quantum Design Magnetic Properties Measurement System (QD-MPMS).

  11. Avalanche breakdown of the quantum hall effects

    CERN Document Server

    Komiyama, S

    1999-01-01

    Heat stability of two-dimensional electron gas (2DEG) systems in the integer quantum hall effect (IQHE) regime is discussed, and a heat instability is suggested to be the intrinsic mechanism behind the breakdown of the IQHE. Phenomenological argument is provided to suggest that the 2DEG system in the IQHE state becomes thermally unstable when the Hall electric field E sub y reaches a threshold value E sub b. Above E sub b , excited nonequilibrium electrons (holes), which are initially present in the conductor as the temperature fluctuation, are accelerated by E sub y and the 2DEG thereby undergoes a transition to a warm dissipative state. The critical field, E sub b , of this abrupt transition is theoretically estimated and shown to be in fare agreement with experimentally reported values. Consideration of the dynamics of electrons suggests that the transition is a process of avalanche electron-hole pair multiplication, in which a small number of non-equilibrium carriers, gains kinetic energy within a Landau ...

  12. Gauge Physics of Spin Hall Effect

    Science.gov (United States)

    Tan, Seng Ghee; Jalil, Mansoor B. A.; Ho, Cong Son; Siu, Zhuobin; Murakami, Shuichi

    2015-12-01

    Spin Hall effect (SHE) has been discussed in the context of Kubo formulation, geometric physics, spin orbit force, and numerous semi-classical treatments. It can be confusing if the different pictures have partial or overlapping claims of contribution to the SHE. In this article, we present a gauge-theoretic, time-momentum elucidation, which provides a general SHE equation of motion, that unifies under one theoretical framework, all contributions of SHE conductivity due to the kinetic, the spin orbit force (Yang-Mills), and the geometric (Murakami-Fujita) effects. Our work puts right an ambiguity surrounding previously partial treatments involving the Kubo, semiclassical, Berry curvatures, or the spin orbit force. Our full treatment shows the Rashba 2DEG SHE conductivity to be instead of -, and Rashba heavy hole instead of -. This renewed treatment suggests a need to re-derive and re-calculate previously studied SHE conductivity.

  13. Fractional quantum Hall effect in optical lattices

    International Nuclear Information System (INIS)

    Hafezi, M.; Demler, E.; Lukin, M. D.; Soerensen, A. S.

    2007-01-01

    We analyze a recently proposed method to create fractional quantum Hall (FQH) states of atoms confined in optical lattices [A. Soerensen et al., Phys. Rev. Lett. 94, 086803 (2005)]. Extending the previous work, we investigate conditions under which the FQH effect can be achieved for bosons on a lattice with an effective magnetic field and finite on-site interaction. Furthermore, we characterize the ground state in such systems by calculating Chern numbers which can provide direct signatures of topological order and explore regimes where the characterization in terms of wave-function overlap fails. We also discuss various issues which are relevant for the practical realization of such FQH states with ultracold atoms in an optical lattice, including the presence of a long-range dipole interaction which can improve the energy gap and stabilize the ground state. We also investigate a detection technique based on Bragg spectroscopy to probe these systems in an experimental realization

  14. Nonlinearity in the effect of an inhomogeneous Hall angle

    Science.gov (United States)

    Koon, Daniel W.

    2007-03-01

    The differential equation for the electric potential in a conducting material with an inhomogeneous Hall angle is extended to the large-field limit. This equation is solved for a square specimen, using a successive over-relaxation [SOR] technique for matrices of up to 101x101 size, and the Hall weighting function -- the effect of local pointlike perturbations on the measured Hall angle -- is calculated as both the unperturbed Hall angle, θH, and the perturbation, δθH, exceed the linear, small angle limit. Preliminary results show that the Hall angle varies by no more than 5% if both | θH |<1 and | δθH |<1. Thus, previously calculated results for the Hall weighting function can be used for most materials in all but the most extreme magnetic fields.

  15. Nonadiabatic effects in the Quantum Hall regime

    International Nuclear Information System (INIS)

    Page, D.A.; Brown, E.

    1993-01-01

    The authors consider the effect of a finite electric field on the states of a Bloch electron in two dimensions, with a uniform magnetic field present. They make use of the concept of electric time translation symmetry and treat the electric and magnetic fields symmetrically in a time dependent formalism. In addition to a wave vector k, the states are characterized by a frequency specifying the behavior under electric time translations. An effective Hamiltonian is employed to obtain the splitting of an isolated Bloch band into open-quotes frequencyclose quotes subbands. The time-averaged velocity and energy of the states are expressed in terms of the frequency dispersion. The relationship to the Stark ladder eigenstates in a scalar potential representation of the electric field is examined. This is seen to justify the use of the averaged energy in determining occupation of the states. In the weak electric field (adiabatic) limit, an expression is recovered for the quantized Hall conductivity of a magnetic subband as a topological invariant. A numerical procedure is outlined and results obtained over a range of electric field strengths. A transition between strong and weak field regimes is seen, with level repulsions between the frequencies playing an important role. The numerical results show how the magnetic subband structure and quantized Hall conductivity emerge as the electric field becomes weaker. In this regime, the behavior can be understood by comparison to the predictions of the adiabatic approximation. The latter predicts crossings in the frequencies at certain locations in wave vector space. Nonadiabatic effects are seen to produce gaps in the frequency spectrum at these locations. 35 refs., 14 figs

  16. Scaling of the anomalous Hall effect in the insulating regime

    Czech Academy of Sciences Publication Activity Database

    Liu, X.-J.; Liu, X.; Sinova, Jairo

    2011-01-01

    Roč. 84, č. 16 (2011), 165304/1-165304/11 ISSN 1098-0121 Institutional research plan: CEZ:AV0Z10100521 Keywords : disordred-systems * impurity conduction * percolation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.691, year: 2011 http://link.aps.org/doi/10.1103/PhysRevB.84.165304

  17. Magnetic circuit for hall effect plasma accelerator

    Science.gov (United States)

    Manzella, David H. (Inventor); Jacobson, David T. (Inventor); Jankovsky, Robert S. (Inventor); Hofer, Richard (Inventor); Peterson, Peter (Inventor)

    2009-01-01

    A Hall effect plasma accelerator includes inner and outer electromagnets, circumferentially surrounding the inner electromagnet along a thruster centerline axis and separated therefrom, inner and outer magnetic conductors, in physical connection with their respective inner and outer electromagnets, with the inner magnetic conductor having a mostly circular shape and the outer magnetic conductor having a mostly annular shape, a discharge chamber, located between the inner and outer magnetic conductors, a magnetically conducting back plate, in magnetic contact with the inner and outer magnetic conductors, and a combined anode electrode/gaseous propellant distributor, located at a bottom portion of the discharge chamber. The inner and outer electromagnets, the inner and outer magnetic conductors and the magnetically conducting back plate form a magnetic circuit that produces a magnetic field that is largely axial and radially symmetric with respect to the thruster centerline.

  18. Precision of single-engage micro Hall effect measurements

    DEFF Research Database (Denmark)

    Henrichsen, Henrik Hartmann; Hansen, Ole; Kjær, Daniel

    2014-01-01

    Recently a novel microscale Hall effect measurement technique has been developed to extract sheet resistance (RS), Hall sheet carrier density (NHS) and Hall mobility (μH) from collinear micro 4-point probe measurements in the vicinity of an insulating boundary [1]. The technique measures in less......]. In this study we calculate the measurement error on RS, NHS and μH resulting from electrode position errors, probe placement, sample size and Hall signal magnitude. We show the relationship between measurement precision and electrode pitch, which is important when down-scaling the micro 4-point probe to fit...

  19. Useful Pedagogical Applications of the Classical Hall Effect

    Science.gov (United States)

    Houari, Ahmed

    2007-01-01

    One of the most known phenomena in physics is the Hall effect. This is mainly due to its simplicity and to the wide range of its theoretical and practical applications. To complete the pedagogical utility of the Hall effect in physics teaching, I will apply it here to determine the Faraday constant as a fundamental physical number and the number…

  20. Bulk Versus Edge in the Quantum Hall Effect

    OpenAIRE

    Kao, Y. -C.; Lee, D. -H.

    1996-01-01

    The manifestation of the bulk quantum Hall effect on edge is the chiral anomaly. The chiral anomaly {\\it is} the underlying principle of the ``edge approach'' of quantum Hall effect. In that approach, $\\sxy$ should not be taken as the conductance derived from the space-local current-current correlation function of the pure one-dimensional edge problem.

  1. Anomalous Hall conductivity and electronic structures of Si-substituted Mn2CoAl epitaxial films

    Science.gov (United States)

    Arima, K.; Kuroda, F.; Yamada, S.; Fukushima, T.; Oguchi, T.; Hamaya, K.

    2018-02-01

    We study anomalous Hall conductivity (σAHC) and electronic band structures of Si-substituted Mn2CoAl (Mn2CoAl1 -xSix ). First-principles calculations reveal that the electronic band structure is like a spin-gapless system even after substituting a quaternary element of Si for Al up to x =0.2 in Mn2CoAl1 -xSix . This means that the Si substitution enables the Fermi-level shift without largely changing the electronic structures in Mn2CoAl . By using molecular beam epitaxy techniques, Mn2CoAl1 -xSix epitaxial films can be grown, leading to the systematic control of x (0 ⩽x ⩽0.3 ). In addition to the electrical conductivity, the values of σAHC for the Mn2CoAl1 -xSix films are similar to those in Mn2CoAl films shown in previous reports. We note that a very small σAHC of ˜1.1 S/cm is obtained for x = 0.225, and the sign of σAHC is changed from positive to negative at around x = 0.25. We discuss the origin of the sign reversal of σAHC as a consequence of the Fermi-level shift in Mn2CoAl . Considering the presence of the structural disorder in the Mn2CoAl1 -xSix films, we can conclude that the small value and sign reversal of σAHC are not related to the characteristics of spin-gapless semiconductors.

  2. Role of the Hall Effect on the Magnetorotational Instability

    Science.gov (United States)

    Bejarano, Cecilia; Gómez, Daniel

    Within the framework of magnetohydrodynamics, the Hall effect might become significant either in fully ionized low density plasmas or in cold plasmas with a low ionization fraction. We address the role of the Hall current in the development of the magnetorotational instability. The instability criterion and the instability growth rate are derived from a one-dimensional model.

  3. Critical current in the Integral Quantum Hall Effect

    International Nuclear Information System (INIS)

    Kostadinov, I.Z.

    1985-11-01

    A multiparticle theory of the Integral Quantum Hall Effect (IQHE) was constructed operating with pairs wave function as an order parameter. The IQHE is described with bosonic macroscopic states while the fractional QHE with fermionic ones. The calculation of the critical current and Hall conductivity temperature dependence is presented. (author)

  4. Materials for giant spin Hall effect devices

    Science.gov (United States)

    Jayanthinarasimham, Avyaya

    Studies presented in this thesis are an effort to control the growth of beta W and explore the in-plane current induced effects in a beta W and CoFeB bilayer. Physical vapor deposited W films beyond 5 nm transform from beta to the stable bulk alpha phase. beta W films with 5 nm thickness when integrated with the other films for large scale fabrication presents a small process window for etch and deposition errors. Also, CoFeB on W does not generate perpendicular magnetic anisotropy (PMA) even when it is capped with MgOjTa(Capping) layers. The beta W with larger thickness process window and a CoFeB with PMA deposited on top of W is necessary for an ideal functioning spin Hall effect (SHE) device. This thesis will focus on overcoming the above mentioned challenges. 2 sccm of O2 gas was introduced during the growth of beta W, this resulted in thicker films with beta W. If a large amount of O2 was introduced, it resulted in complete oxidation and loss of crystallinity. Thus an optimum amount of oxygen is necessary. However, introducing O2 during the deposition can effect other metals present on the wafer, which is not ideal. N2 was utilized to achieve thicker beta W films. Upon introducing N with similar concentration of O, it lead to amorphization of W, thus revealing a kinetic control. A pulsed N2 of 1 sccm at 2-second period was used to kinetically control the growth of beta W. Both the techniques were able to grow beta W from 5 nm up to 20 nm thick films. Films with N-assisted growth exhibited lower resistance and higher metallic character. 1 nm Ta, Mo and CoFe were used as insert layers between beta W and CoFeB to induce PMA. 1 nm Mo insert layer and 5 nm Mo under layer have largely different interfaces with CoFeB even when annealed in ultra high vacuum (UHV) environment. Thus, 1 nm Mo layer does not show any PMA. The CoFe insert layer adds to the bulk anisotropy and dominates the interface anisotropy, and does not lead to any PMA. The 1 nm Ta insert exhibits

  5. Quantum Theory of Conducting Matter Superconductivity and Quantum Hall Effect

    CERN Document Server

    Fujita, Shigeji; Godoy, Salvador

    2009-01-01

    Explains major superconducting properties including zero resistance, Meissner effect, sharp phase change, flux quantization, excitation energy gap, and Josephson effects using quantum statistical mechanical calculations. This book covers the 2D superconductivity and the quantum Hall effects

  6. Mesoscopic effects in the quantum Hall regime

    Indian Academy of Sciences (India)

    The seven magnetic sub-bands are well separated by energy gaps at disorder strengthW =0.5. The Hall conductance of each of the q magnetic sub-bands, when they are separated by energy gaps, have been shown to be quantized [13]. The Hall conductance σ r (in units of e2/h), when the lowest r sub-bands are occupied, ...

  7. Unconventional quantum Hall effect in Floquet topological insulators

    KAUST Repository

    Tahir, M.

    2016-07-27

    We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the lights polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity αyx = 0 at zero Fermi energy, to a Hall insulator state with αyx = e2/2h. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at (±1/2,±3/2,±5/2, ...)e2/h. © 2016 IOP Publishing Ltd Printed in the UK.

  8. Accurate micro Hall effect measurements on scribe line pads

    DEFF Research Database (Denmark)

    Østerberg, Frederik Westergaard; Petersen, Dirch Hjorth; Wang, Fei

    2009-01-01

    be extracted from micro four-point measurements performed on a rectangular pad. The dimension of the investigated pad is 400 × 430 ¿m2, and the probe pitches range from 20 ¿m to 50 ¿m. The Monte Carlo method is used to find the optimal way to perform the Hall measurement and extract Hall mobility most......Hall mobility and sheet carrier density are important parameters to monitor in advanced semiconductor production. If micro Hall effect measurements are done on small pads in scribe lines, these parameters may be measured without using valuable test wafers. We report how Hall mobility can...... accurate in less than a minute. Measurements are performed on shallow trench isolation patterned silicon wafers to verify the results from the Monte Carlo method....

  9. A Novel Hall Effect Sensor Using Elaborate Offset Cancellation Method

    Directory of Open Access Journals (Sweden)

    Vlassis N. Petoussis

    2009-01-01

    Full Text Available The Hall effect is caused by a traverse force that is formed in the electrons or holes of metal element or semiconductor when are polarized by current source and simultaneously all the system it is found vertical in external magnetic field. Result is finally the production of difference of potential (Hall voltage in address vertical in that of current and magnetic field directions. In the present work is presented a new Hall sensor exploiting the former operation. In combination with his pioneering form and using dynamic spinning current technique with an elaborate sequence, it leads to satisfactory results of produced Hall voltage with small noise in a presence of external magnetic field. Anyone can see both the spinning current and anti-Hall technique in the same sensor simultaneously.

  10. Quantum Computing With Quasiparticles of the Fractional Quantum Hall Effect

    National Research Council Canada - National Science Library

    Averin, Dmitri

    2001-01-01

    The focus of this project was the theoretical study of quantum computation based on controlled transfer of individual quasiparticles in systems of quantum antidots in the regime of the Fractional Quantum Hall Effect (FQHE...

  11. Simultaneous effects of Hall and convective conditions on peristaltic ...

    Indian Academy of Sciences (India)

    stress fluid in an inclined asymmetric channel with convective conditions. Soret and Dufour and Hall effects are taken into account. Analysis has been carried out in a wave frame of reference. Expressions for velocity, pressure gradient, temperature ...

  12. The Quantum Hall Effect: Novel Excitations and Broken Symmetries

    OpenAIRE

    Girvin, Steven M.

    1999-01-01

    These pedagogical lecture notes present a general introduction to most aspects of the integer and fractional quantum Hall effects. This is followed by an extensive discussion of quantum Hall ferromagnetism, both for spins in single-layer systems and `pseudospins' in double-layer systems. The effective field theories describing various broken symmetry states and `skyrmion' and `meron' spin textures are derived and discussed in some detail. Pedagogical presentations on Berry phases and lowest L...

  13. Iodine Plasma Species Measurements in a Hall Effect Thruster Plume

    Science.gov (United States)

    2013-05-01

    from a 200 W Hall Effect Thruster fueled by iodine vapor was analyzed. The plasma source included a laboratory propellant feed system and a laboratory...distribution is unlimited Abstract • The plasma plume from a 200 W Hall Effect Thruster fueled by iodine vapor was analyzed. • The plasma source... pressure with I2 – Plume divergence lower with I2 – Dimers (I2+) measured at beam centroid (a few %) Iodine Xenon 7 Distribution A: Approved for public

  14. Anisotropic intrinsic spin Hall effect in quantum wires

    International Nuclear Information System (INIS)

    Cummings, A W; Akis, R; Ferry, D K

    2011-01-01

    We use numerical simulations to investigate the spin Hall effect in quantum wires in the presence of both Rashba and Dresselhaus spin-orbit coupling. We find that the intrinsic spin Hall effect is highly anisotropic with respect to the orientation of the wire, and that the nature of this anisotropy depends strongly on the electron density and the relative strengths of the Rashba and Dresselhaus spin-orbit couplings. In particular, at low densities, when only one subband of the quantum wire is occupied, the spin Hall effect is strongest for electron momentum along the [1-bar 10] axis, which is the opposite of what is expected for the purely 2D case. In addition, when more than one subband is occupied, the strength and anisotropy of the spin Hall effect can vary greatly over relatively small changes in electron density, which makes it difficult to predict which wire orientation will maximize the strength of the spin Hall effect. These results help to illuminate the role of quantum confinement in spin-orbit-coupled systems, and can serve as a guide for future experimental work on the use of quantum wires for spin-Hall-based spintronic applications. (paper)

  15. Energy Spectrum and Quantum Hall Effect in Twisted Bilayer Graphene

    OpenAIRE

    Moon, Pilkyung; Koshino, Mikito

    2012-01-01

    We investigate the electronic spectra and quantum Hall effect in twisted bilayer graphenes with various rotation angles under magnetic fields, using a model rigorously including the interlayer interaction. We describe the spectral evolution from discrete Landau levels in the weak field regime to the fractal band structure in the strong field regime, and estimate the quantized Hall conductivity for each single gap. In weak magnetic fields, the low-energy conduction band of the twisted bilayer ...

  16. The Hall Effect in Hydrided Rare Earth Films

    Science.gov (United States)

    Koon, D. W.; Azofeifa, D. E.; Clark, N.

    We describe two new techniques for measuring the Hall effect in capped rare earth films during hydriding. In one, we simultaneously measure resistivity and the Hall coefficient for a rare earth film covered with four different thicknesses of Pd, recovering the charge transport quantities for both materials. In the second technique, we replace Pd with Mn as the covering layer. We will present results from both techniques.

  17. Magnetohydrodynamic simulations of Gamble I POS with Hall effect

    International Nuclear Information System (INIS)

    Roderick, N.F.; Frese, M.H.; Peterkin, R.E.; Payne, S.S.

    1989-01-01

    Two dimensional single fluid magnetohydrodynamic simulations have been conducted to investigate the effects of the Hall electric field on magnetic field transport in plasma opening switches of the type used on Gamble I. The Hall terms were included in the magnetic field transport equation in the two dimensional simulation code MACH2 through the use of a generalized Ohm's law. Calculations show the Hall terms augment the field transport previously observed to occur through ion fluid motion and diffusion. For modest values of microturbulent collision frequency, board current channels were observed . Results also show the magnetic field transport to be affected by the cathode boundary conditions with the Hall terms included. In all cases center of mass motion was slight

  18. Matrix effective theories of the fractional quantum Hall effect

    International Nuclear Information System (INIS)

    Cappelli, Andrea; Rodriguez, Ivan D

    2009-01-01

    The present understanding of nonperturbative ground states in the fractional quantum Hall effect is based on effective theories of the Jain 'composite fermion' excitations. We review the approach based on matrix variables, i.e. D0 branes, originally introduced by Susskind and Polychronakos. We show that the Maxwell-Chern-Simons matrix gauge theory provides a matrix generalization of the quantum Hall effect, where the composite-fermion construction naturally follows from gauge invariance. The matrix ground states obtained by suitable projections of higher Landau levels are found to be in one-to-one correspondence with the Laughlin and Jain hierarchical states. The matrix theory possesses a physical limit for commuting matrices that could be reachable while staying in the same phase.

  19. Valley Hall effect and Nernst effect in strain engineered graphene

    Science.gov (United States)

    Niu, Zhi Ping; Yao, Jian-ming

    2018-04-01

    We theoretically predict the existence of tunneling valley Hall effect and Nernst effect in the normal/strain/normal graphene junctions, where a strained graphene is sandwiched by two normal graphene electrodes. By applying an electric bias a pure transverse valley Hall current with longitudinal charge current is generated. If the system is driven by a temperature bias, a valley Nernst effect is observed, where a pure transverse valley current without charge current propagates. Furthermore, the transverse valley current can be modulated by the Fermi energy and crystallographic orientation. When the magnetic field is further considered, we obtain a fully valley-polarized current. It is expected these features may be helpful in the design of the controllable valleytronic devices.

  20. Absence of quantum anomalous Hall state in 4 d transition-metal-doped B i2S e3 : An ab initio study

    Science.gov (United States)

    Deng, Bei; Liu, Feng; Zhu, Junyi

    2017-11-01

    The realization of insulating ferromagnetic states in topological insulator (TI) systems, with sufficiently high Curie temperatures (TC) and large magnetically induced gaps, has been the key bottleneck towards the realization of the quantum anomalous Hall effect (QAHE). Despite the limited reports on 3 d or 4 f transition-metal (TM)-doped B i2S e3 , there remains a lack of systematic studies on 4 d TMs, which may be potential candidates since the atomic sizes of 4 d TMs and that of Bi are similar. Here, we report a theoretical work that probes the magnetic behaviors of the 4 d TM-doped B i2S e3 system. We discovered that among the 4 d TMs, Nb and Mo can create magnetic moments of 1.76 and 2.96 μ B in B i2S e3 , respectively. While Mo yields a stable gapless antiferromagnetic ground state, Nb favors a strong ferromagnetic order, with the magnetic coupling strength (TC) ˜6 times of that induced by the traditional Cr impurity. Yet, we found that Nb is still unfavorable to support the QAH state in B i2S e3 because of the reduced correlation in the t2 g band that gives a gapless character. This rationale is not only successful in interpreting why Nb, the strongest candidate among 4 d TMs for achieving ferromagnetism in B i2S e3 , actually cannot lead to QAHE in the B i2S e3 system even with the assistance of codoping but also is particularly important to fully understand the mechanism of acquisition of insulating ferromagnetic states inside TI. On the other hand, we discovered that Mo-doped B i2S e3 favors strong antiferromagnetic states and may lead to superconducting states.

  1. Crossover between spin swapping and Hall effect in disordered systems

    KAUST Repository

    Saidaoui, Hamed Ben Mohamed

    2015-07-16

    We theoretically study the crossover between spin Hall effect and spin swapping, a recently predicted phenomenon that consists of the interchange between the current flow and its spin polarization directions [M. B. Lifshits and M. I. Dyakonov, Phys. Rev. Lett. 103, 186601 (2009)]. Using a tight-binding model with spin-orbit coupled disorder, spin Hall effect, spin relaxation, and spin swapping are treated on equal footing. We demonstrate that spin swapping and spin Hall effect present very different dependencies as a function of the spin-orbit coupling and disorder strengths and confirm that the former exceeds the latter in the parameter range considered. Three setups are proposed for the experimental observation of the spin swapping effect.

  2. Anomalous transport effects and possible environmental symmetry ...

    Indian Academy of Sciences (India)

    2015-05-06

    May 6, 2015 ... The heavy-ion collision provides a unique many-body environment where local domains of strongly interacting chiral medium may occur and in a sense allow environmental symmetry 'violation' phenomena. For example, certain anomalous transport processes, forbidden in usual medium, become possible ...

  3. Effect of Hall Current and Finite Larmor Radius Corrections on ...

    Indian Academy of Sciences (India)

    The finite electrical resistivity removes the effect of magnetic field and the viscosity of the medium removes the effect of FLR from the condition of radiative instability. The Hall parameter affects only the longitudinal mode of propagation and it has no effect on the transverse mode of propagation. Numerical calculation shows ...

  4. Diaphragm Effect of Steel Space Roof Systems in Hall Structures

    Directory of Open Access Journals (Sweden)

    Mehmet FENKLİ

    2015-09-01

    Full Text Available Hall structures have been used widely for different purposes. They have are reinforced concrete frames and shear wall with steel space roof systems. Earthquake response of hall structures is different from building type structures. One of the most critical nodes is diaphragm effect of steel space roof on earthquake response of hall structures. Diaphragm effect is depending on lateral stiffness capacity of steel space roof system. Lateral stiffness of steel space roof system is related to modulation geometry, support conditions, selected sections and system geometry. In current paper, three representative models which are commonly used in Turkey were taken in to account for investigation. Results of numerical tests were present comparatively

  5. Topological Phase Transitions in the Photonic Spin Hall Effect

    Science.gov (United States)

    Kort-Kamp, W. J. M.

    2017-10-01

    The recent synthesis of two-dimensional staggered materials opens up burgeoning opportunities to study optical spin-orbit interactions in semiconducting Dirac-like systems. We unveil topological phase transitions in the photonic spin Hall effect in the graphene family materials. It is shown that an external static electric field and a high frequency circularly polarized laser allow for active on-demand manipulation of electromagnetic beam shifts. The spin Hall effect of light presents a rich dependence with radiation degrees of freedom, and material properties, and features nontrivial topological properties. We discover that photonic Hall shifts are sensitive to spin and valley properties of the charge carriers, providing an unprecedented pathway to investigate spintronics and valleytronics in staggered 2D semiconductors.

  6. Semiclassical droplet states in matrix quantum Hall effect

    International Nuclear Information System (INIS)

    Cappelli, Andrea; Rodriguez, Ivan D.

    2008-01-01

    We derive semiclassical ground state solutions that correspond to the quantum Hall states earlier found in the Maxwell-Chern-Simons matrix theory. They realize the Jain composite-fermion construction and their density is piecewise constant as that of phenomenological wave functions. These results support the matrix theory as a possible effective theory of the fractional Hall effect. A crucial role is played by the constraint limiting the degeneracy of matrix states: we find its explicit gauge invariant form and clarify its physical interpretation

  7. Theory of the quantized Hall effect. Pt. 3

    International Nuclear Information System (INIS)

    Levine, H.; Pruisken, A.M.M.; Libby, S.B.

    1984-01-01

    In the previous paper, we have demonstrated the need for a phase transition as a function of theta in the non-liner sigma-model describing the quantized Hall effect. In this work, we present arguments for the occurrence of exactly such a transition. We make use of a dilute gas instanton approximation as well as present a more rigorous duality argument to show that the usual scaling of the conductivity to zero at large distances is altered whenever sigmasub(xy)sup((0)) approx.= 1/2ne 2 /h, n integer. This then completes our theory of the quantized Hall effect. (orig.)

  8. Complex scattering dynamics and the quantum Hall effects

    International Nuclear Information System (INIS)

    Trugman, S.A.

    1994-01-01

    We review both classical and quantum potential scattering in two dimensions in a magnetic field, with applications to the quantum Hall effect. Classical scattering is complex, due to the approach of scattering states to an infinite number of dynamically bound states. Quantum scattering follows the classical behavior rather closely, exhibiting sharp resonances in place of the classical bound states. Extended scatterers provide a quantitative explanation for the breakdown of the QHE at a comparatively small Hall voltage as seen by Kawaji et al., and possibly for noise effects

  9. Planar Hall effect sensor with magnetostatic compensation layer

    DEFF Research Database (Denmark)

    Dalslet, Bjarke Thomas; Donolato, Marco; Hansen, Mikkel Fougt

    2012-01-01

    Demagnetization effects in cross-shaped planar Hall effect sensors cause inhomogeneous film magnetization and a hysteretic sensor response. Furthermore, when using sensors for detection of magnetic beads, the magnetostatic field from the sensor edges attracts and holds magnetic beads near the sen...

  10. Effect of Hall Current and Finite Larmor Radius Corrections on ...

    Indian Academy of Sciences (India)

    Abstract. The effects of finite ion Larmor radius (FLR) corrections,. Hall current and radiative heat-loss function on the thermal instability of an infinite homogeneous, viscous plasma incorporating the effects of finite electrical resistivity, thermal conductivity and permeability for star formation in interstellar medium have been ...

  11. Complex dynamics of the integer quantum Hall effect

    International Nuclear Information System (INIS)

    Trugman, S.A.; Nicopoulos, V.N.; Florida Univ., Gainesville, FL

    1991-01-01

    We investigate both classical and quantum potential scattering in two dimensions in a magnetic field, with applications to the integer quantum Hall effect. Classical scattering is complex, due in one case to the approach of scattering states to an infinite number of bound states. We show that bound states are generic, and occur for all but extremely smooth scattering potentials (|rvec ∇| → 0). Quantum scattering follows the classical behavior rather closely, exhibiting sharp resonances rather than classical bound states. Extended scatterers provide an explanation for the breakdown of the QHE at a comparatively small Hall voltage. 16 refs., 14 figs

  12. Inverse spin Hall effect in Pt/(Ga,Mn)As

    Science.gov (United States)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 1019 m-2, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  13. The integer quantum hall effect revisited

    Energy Technology Data Exchange (ETDEWEB)

    Michalakis, Spyridon [Los Alamos National Laboratory; Hastings, Matthew [Q STATION, CALIFORNIA

    2009-01-01

    For T - L x L a finite subset of Z{sup 2}, let H{sub o} denote a Hamiltonian on T with periodic boundary conditions and finite range, finite strength intetactions and a unique ground state with a nonvanishing spectral gap. For S {element_of} T, let q{sub s} denote the charge at site s and assume that the total charge Q = {Sigma}{sub s {element_of} T} q{sub s} is conserved. Using the local charge operators q{sub s}, we introduce a boundary magnetic flux in the horizontal and vertical direction and allow the ground state to evolve quasiadiabatically around a square of size one magnetic flux, in flux space. At the end of the evolution we obtain a trivial Berry phase, which we compare, via a method reminiscent of Stokes Theorem. to the Berry phase obtained from an evolution around an exponentially small loop near the origin. As a result, we show, without any averaging assumption, that the Hall conductance is quantized in integer multiples of e{sup 2}/h up to exponentially small corrections of order e{sup -L/{zeta}}, where {zeta}, is a correlation length that depends only on the gap and the range and strength of the interactions.

  14. Anomalous magnetoresistance effect in sputtered TbFeCo relating to dispersed magnetic moment

    International Nuclear Information System (INIS)

    Yumoto, S.; Toki, K.; Okada, O.; Gokan, H.

    1988-01-01

    The electric resistance is sputtered TbFeCo has been measured at room temperature as a function of magnetic field perpendicular to the film plane. Two kinds of anomalous magnetoresistance have been observed. One is a magnetoresistance peak in the magnetization reversal region. The other is reversible change proportional to the applied magnetic field, appearing in the other region. The magnetoresistance peak agrees well with a curve calculated from experimental Hall loop, using a phenomenological relation between anomalous magnetoresistance and anomalous Hall voltage. The magnetoresistance peak is found to originate from magnetic domain walls. The linear magnetoresistance change for TM dominant samples appears in a direction opposite to that for RE dominant samples. The linear change can't be derived from Hall loop

  15. Effect of Hall Current and Finite Larmor Radius Corrections on ...

    Indian Academy of Sciences (India)

    Home; Journals; Journal of Astrophysics and Astronomy; Volume 37; Issue 3. Effect of Hall Current and Finite Larmor Radius Corrections on Thermal Instability of Radiative Plasma for Star Formation in Interstellar Medium (ISM). Sachin Kaothekar. Research Article Volume 37 Issue 3 September 2016 Article ID 23 ...

  16. Effect of Hall Current and Finite Larmor Radius Corrections on ...

    Indian Academy of Sciences (India)

    discussed the magnetothermal instability with generalized Ohms law taking the effects of electrical resistivity, Hall current, electron inertia, thermal conductivity and radiative heat-loss function. Burkert and Lin (2000) pointed out the importance of thermal instability in the formation of clumpy gas clouds and they showed that.

  17. Dynamics of antiferromagnetic skyrmion driven by the spin Hall effect

    Science.gov (United States)

    Jin, Chendong; Song, Chengkun; Wang, Jianbo; Liu, Qingfang

    2016-10-01

    Magnetic skyrmion moved by the spin-Hall effect is promising for the application of the generation racetrack memories. However, the Magnus force causes a deflected motion of skyrmion, which limits its application. Here, we create an antiferromagnetic skyrmion by injecting a spin-polarized pulse in the nanostripe and investigate the spin Hall effect-induced motion of antiferromagnetic skyrmion by micromagnetic simulations. In contrast to ferromagnetic skyrmion, we find that the antiferromagnetic skyrmion has three evident advantages: (i) the minimum driving current density of antiferromagnetic skyrmion is about two orders smaller than the ferromagnetic skyrmion; (ii) the velocity of the antiferromagnetic skyrmion is about 57 times larger than the ferromagnetic skyrmion driven by the same value of current density; (iii) antiferromagnetic skyrmion can be driven by the spin Hall effect without the influence of Magnus force. In addition, antiferromagnetic skyrmion can move around the pinning sites due to its property of topological protection. Our results present the understanding of antiferromagnetic skyrmion motion driven by the spin Hall effect and may also contribute to the development of antiferromagnetic skyrmion-based racetrack memories.

  18. Planar Hall effect sensor for magnetic micro- and nanobead detection

    DEFF Research Database (Denmark)

    Ejsing, Louise Wellendorph; Hansen, Mikkel Fougt; Menon, Aric Kumaran

    2004-01-01

    Magnetic bead sensors based on the planar Hall effect in thin films of exchange-biased permalloy have been fabricated and characterized. Typical sensitivities are 3 muV/Oe mA. The sensor response to an applied magnetic field has been measured without and with coatings of commercially available 2 ...

  19. Low-frequency noise in planar Hall effect bridge sensors

    DEFF Research Database (Denmark)

    Persson, Anders; Bejhedb, R.S.; Bejhed, R.S.

    2011-01-01

    The low-frequency characteristics of planar Hall effect bridge sensors are investigated as function of the sensor bias current and the applied magnetic field. The noise spectra reveal a Johnson-like spectrum at high frequencies, and a 1/f-like excess noise spectrum at lower frequencies, with a kn...

  20. Hall Effect Thruster for High Power Solar Electric Propulsion Technology Demonstration, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Busek proposes to develop a flight version of a high power Hall Effect thruster. While numerous high power Hall Effect thrusters have been demonstrated in the...

  1. Effect of anomalous drift during ion implantation

    International Nuclear Information System (INIS)

    Aleksandrov, P.A.; Baranova, E.K.; Beloshitskii, V.V.; Demakov, K.D.; Starostin, V.A.

    1986-01-01

    Experimental and theoretical results are presented on Tl-ion implantation into hot silicon substrates (approx. 1200 0 C). a An anomalously large (by more than an order of magnitude) displacement of the peak position of the implanted impurity distribution into the bulk of the substrate is found. b) The conclusion is drawn that the basic process responsible for this displacement of the peak is radiation-enhanced diffusion (RED) due to nonequilibrium concentration of point defects produced in the heated target directly under implantation. c) The crystalline structure of the resulting ion-implanted layer indicates that in-situ annealing of the exposed layer occurs during high-temperature implantation. d) Experimental impurity distributions confirm the possibility of producing an implanted-impurity 'buried layer' below the layer of a single crystal silicon, the 'buried layer' depth depending on the implantation regime. (author)

  2. Inverse Spin Hall Effect in SNS Josephson Junctions

    OpenAIRE

    Mal'shukov, A. G.; Sadjina, Severin; Brataas, Arne

    2009-01-01

    We consider DC supercurrents in SNS junctions. Spin-orbit coupling in combination with Zeeman fields can induce an effective vector potential in the normal conductor. As a consequence, an out-of-plane spin-density varying along the transverse direction causes a longitudinal phase difference between the superconducting terminals. The resulting equilibrium phase coherent supercurrent is analogue to the non-equilibrium inverse spin Hall effect in normal conductors. We explicitly compute the effe...

  3. Effect of quantum tunneling on spin Hall magnetoresistance.

    Science.gov (United States)

    Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

    2017-02-22

    We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y 3 Fe 5 O 12 ) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

  4. Current Percolation in Medium with Boundaries under Quantum Hall Effect Conditions

    Directory of Open Access Journals (Sweden)

    M. U. Malakeeva

    2012-01-01

    Full Text Available The current percolation has been considered in the medium with boundaries under quantum Hall effect conditions. It has been shown that in that case the effective Hall conductivity has a nonzero value due to percolation of the Hall current through the finite number of singular points (in our model these are corners at the phase joints.

  5. Interaction-induced interference in the integer quantum Hall effect

    Science.gov (United States)

    Sivan, I.; Bhattacharyya, R.; Choi, H. K.; Heiblum, M.; Feldman, D. E.; Mahalu, D.; Umansky, V.

    2018-03-01

    In recent interference experiments with an electronic Fabry-Pérot interferometer (FPI), implemented in the integer quantum Hall effect regime, a flux periodicity of h /2 e was observed at bulk fillings νB>2.5 . The halved periodicity was accompanied by an interfering charge e*=2 e , determined by shot-noise measurements. Here, we present measurements demonstrating that, counterintuitively, the coherence and the interference periodicity of the interfering chiral edge channel are solely determined by the coherence and the enclosed flux of the adjacent edge channel. Our results elucidate the important role of the latter and suggest that a neutral chiral edge mode plays a crucial role in the pairing phenomenon. Our findings reveal that the observed pairing of electrons is not a curious isolated phenomenon, but one of many manifestations of unexpected edge physics in the quantum Hall effect regime.

  6. Edge states in quantum Hall effect in graphene

    International Nuclear Information System (INIS)

    Gusynin, V.P.; Miransky, V.A.; Sharapov, S.G.; Shovkovy, I.A.

    2008-01-01

    We review recent results concerning the spectrum of edge states in the quantum Hall effect in graphene. In particular, special attention is paid to the derivation of the conditions under which gapless edge states exist in the spectrum of graphene with 'zigzag' and 'armchair' edges. It is found that in the case of a half-plane or a ribbon with zigzag edges, there are gapless edge states only when a spin gap dominates over a Dirac mass gap. In the case of a half-plane with an armchair edge, the existence of the gapless edge states depends on the specific type of Dirac mass gaps. The implications of these results for the dynamics in the quantum Hall effect in graphene are discussed

  7. Extraordinary Hall-effect in colloidal magnetic nanoparticle films

    Energy Technology Data Exchange (ETDEWEB)

    Ben Gur, Leah; Tirosh, Einat [School of Chemistry, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel); Segal, Amir [School of Physics, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel); Markovich, Gil, E-mail: gilmar@post.tau.ac.il [School of Chemistry, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel); Gerber, Alexander, E-mail: gerber@post.tau.ac.il [School of Physics, Raymond and Beverly Sackler Faculty of Exact Sciences, Tel Aviv University, Tel Aviv 6997801 (Israel)

    2017-03-15

    Colloidal nickel nanoparticles (NPs) coated with polyvinylpyrrolidone (PVP) were synthesized. The nanoparticle dispersions were deposited on substrates and dried under mild heating to form conductive films. The films exhibited very small coercivity, nearly metallic conductivity, and a significant extraordinary Hall effect signal. This method could be useful for preparing simple, printed magnetic field sensors with the advantage of relatively high sensitivity around zero magnetic field, in contrast to magnetoresistive sensors, which have maximal field sensitivity away from zero magnetic field. - Highlights: • Ni nanoparticle ink capable of forming conductive films on drying. • The Ni nanoparticle films exhibit significant extraordinary Hall effect. • This system could be used for preparing printed magnetic field sensors integrated in 3D printed structures.

  8. Hall effect in quantum critical charge-cluster glass

    Science.gov (United States)

    Wu, Jie; Bollinger, Anthony T.; Sun, Yujie

    2016-04-01

    Upon doping, cuprates undergo a quantum phase transition from an insulator to a d-wave superconductor. The nature of this transition and of the insulating state is vividly debated. Here, we study the Hall effect in La2-xSrxCuO4 (LSCO) samples doped near the quantum critical point at x ˜ 0.06. Dramatic fluctuations in the Hall resistance appear below TCG ˜ 1.5 K and increase as the sample is cooled down further, signaling quantum critical behavior. We explore the doping dependence of this effect in detail, by studying a combinatorial LSCO library in which the Sr content is varied in extremely fine steps, Δx ˜ 0.00008. We observe that quantum charge fluctuations wash out when superconductivity emerges but can be restored when the latter is suppressed by applying a magnetic field, showing that the two instabilities compete for the ground state.

  9. Anomalous scaling of stochastic processes and the Moses effect.

    Science.gov (United States)

    Chen, Lijian; Bassler, Kevin E; McCauley, Joseph L; Gunaratne, Gemunu H

    2017-04-01

    The state of a stochastic process evolving over a time t is typically assumed to lie on a normal distribution whose width scales like t^{1/2}. However, processes in which the probability distribution is not normal and the scaling exponent differs from 1/2 are known. The search for possible origins of such "anomalous" scaling and approaches to quantify them are the motivations for the work reported here. In processes with stationary increments, where the stochastic process is time-independent, autocorrelations between increments and infinite variance of increments can cause anomalous scaling. These sources have been referred to as the Joseph effect and the Noah effect, respectively. If the increments are nonstationary, then scaling of increments with t can also lead to anomalous scaling, a mechanism we refer to as the Moses effect. Scaling exponents quantifying the three effects are defined and related to the Hurst exponent that characterizes the overall scaling of the stochastic process. Methods of time series analysis that enable accurate independent measurement of each exponent are presented. Simple stochastic processes are used to illustrate each effect. Intraday financial time series data are analyzed, revealing that their anomalous scaling is due only to the Moses effect. In the context of financial market data, we reiterate that the Joseph exponent, not the Hurst exponent, is the appropriate measure to test the efficient market hypothesis.

  10. Anomalous tensoelectric effects in gallium arsenide tunnel diodes

    Energy Technology Data Exchange (ETDEWEB)

    Alekseeva, Z.M.; Vyatkin, A.P.; Krivorotov, N.P.; Shchegol' , A.A.

    1988-02-01

    Anomalous tensoelectric phenomena induced in a tunnel p-n junction by a concentrated load and by hydrostatic compression were studied. The anomalous tensoelectric effects are caused by the action of concentrators of mechanical stresses in the vicinity of the p-n junction, giving rise to local microplastic strain. Under the conditions of hydrostatic compression prolate inclusions approx.100-200 A long play the role of concentrators. Analysis of irreversible changes in the current-voltage characteristics of tunnel p-n junctions made it possible to separate the energy levels of the defects produced with plastic strain of gallium arsenide.

  11. Pseudospectral Model for Hybrid PIC Hall-effect Thruster Simulation

    Science.gov (United States)

    2015-07-01

    an axial-azimuthal hybrid-PIC HET code is under development, initially with a reduced set of physics. In particular, dynamic ionization is ignored...Approved for public release; distribution unlimited. 412 TW/PAO Clearance No. 15306 xenon only) is with PIC and the electron description is as a...Bilyeu, D., and Tran, J., “ Dynamic Particle Weight Remapping in Hybrid PIC Hall-effect Thruster Simulation,” 34th Int. Electric Propulsion Conf

  12. Hall Effect Influence on a Highly Conducting Fluid

    Energy Technology Data Exchange (ETDEWEB)

    Witalis, E.A.

    1966-11-15

    The properties of an incompressible perfect fluid exhibiting Hall effect is investigated in the limit of infinite electrical conductivity and mobility. The magnetic field strength and the fluid velocity are found to obey the equations B = {mu}{rho}/{sigma} x curlV and V -{mu}/({sigma}{mu}{sub 0}) x curlB (MKS units) where {rho}, {sigma} and {mu} denote mass density, conductivity and charge carrier mobility. Some physical interpretations and applications are given.

  13. Hall Effect in Bulk-Doped Organic Single Crystals.

    Science.gov (United States)

    Ohashi, Chika; Izawa, Seiichiro; Shinmura, Yusuke; Kikuchi, Mitsuru; Watase, Seiji; Izaki, Masanobu; Naito, Hiroyoshi; Hiramoto, Masahiro

    2017-06-01

    The standard technique to separately and simultaneously determine the carrier concentration per unit volume (N, cm -3 ) and the mobility (μ) of doped inorganic single crystals is to measure the Hall effect. However, this technique has not been reported for bulk-doped organic single crystals. Here, the Hall effect in bulk-doped single-crystal organic semiconductors is measured. A key feature of this work is the ultraslow co-deposition technique, which reaches as low as 10 -9 nm s -1 and enables us to dope homoepitaxial organic single crystals with acceptors at extremely low concentrations of 1 ppm. Both the hole concentration per unit volume (N, cm -3 ) and the Hall mobility (μ H ) of bulk-doped rubrene single crystals, which have a band-like nature, are systematically observed. It is found that these rubrene single crystals have (i) a high ionization rate and (ii) scattering effects because of lattice disturbances, which are peculiar to this organic single crystal. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Dynamical quantum Hall effect in the parameter space.

    Science.gov (United States)

    Gritsev, V; Polkovnikov, A

    2012-04-24

    Geometric phases in quantum mechanics play an extraordinary role in broadening our understanding of fundamental significance of geometry in nature. One of the best known examples is the Berry phase [M.V. Berry (1984), Proc. Royal. Soc. London A, 392:45], which naturally emerges in quantum adiabatic evolution. So far the applicability and measurements of the Berry phase were mostly limited to systems of weakly interacting quasi-particles, where interference experiments are feasible. Here we show how one can go beyond this limitation and observe the Berry curvature, and hence the Berry phase, in generic systems as a nonadiabatic response of physical observables to the rate of change of an external parameter. These results can be interpreted as a dynamical quantum Hall effect in a parameter space. The conventional quantum Hall effect is a particular example of the general relation if one views the electric field as a rate of change of the vector potential. We illustrate our findings by analyzing the response of interacting spin chains to a rotating magnetic field. We observe the quantization of this response, which we term the rotational quantum Hall effect.

  15. Resonant Hall effect under generation of a self-sustaining mode of spin current in nonmagnetic bipolar conductors with identical characters between holes and electrons

    Science.gov (United States)

    Sakai, Masamichi; Takao, Hiraku; Matsunaga, Tomoyoshi; Nishimagi, Makoto; Iizasa, Keitaro; Sakuraba, Takahito; Higuchi, Koji; Kitajima, Akira; Hasegawa, Shigehiko; Nakamura, Osamu; Kurokawa, Yuichiro; Awano, Hiroyuki

    2018-03-01

    We have proposed an enhancement mechanism of the Hall effect, the signal of which is amplified due to the generation of a sustaining mode of spin current. Our analytic derivations of the Hall resistivity revealed the conditions indispensable for the observation of the effect: (i) the presence of the transverse component of an effective electric field due to spin splitting in chemical potential in addition to the longitudinal component; (ii) the simultaneous presence of holes and electrons each having approximately the same characteristics; (iii) spin-polarized current injection from magnetized electrodes; (iv) the boundary condition for the transverse current (J c, y = 0). The model proposed in this study was experimentally verified by using van der Pauw-type Hall devices consisting of the nonmagnetic bipolar conductor YH x (x ≃ 2) and TbFeCo electrodes. Replacing Au electrodes with TbFeCo electrodes alters the Hall resistivity from the ordinary Hall effect to the anomalous Hall-like effect with an enhancement factor of approximately 50 at 4 T. We interpreted the enhancement phenomenon in terms of the present model.

  16. Quantum Hall effect in epitaxial graphene with permanent magnets

    Science.gov (United States)

    Parmentier, F. D.; Cazimajou, T.; Sekine, Y.; Hibino, H.; Irie, H.; Glattli, D. C.; Kumada, N.; Roulleau, P.

    2016-12-01

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

  17. Recent advances in the spin Hall effect of light

    Science.gov (United States)

    Ling, Xiaohui; Zhou, Xinxing; Huang, Kun; Liu, Yachao; Qiu, Cheng-Wei; Luo, Hailu; Wen, Shuangchun

    2017-06-01

    The spin Hall effect (SHE) of light, as an analogue of the SHE in electronic systems, is a promising candidate for investigating the SHE in semiconductor spintronics/valleytronics, high-energy physics and condensed matter physics, owing to their similar topological nature in the spin-orbit interaction. The SHE of light exhibits unique potential for exploring the physical properties of nanostructures, such as determining the optical thickness, and the material properties of metallic and magnetic thin films and even atomically thin two-dimensional materials. More importantly, it opens a possible pathway for controlling the spin states of photons and developing next-generation photonic spin Hall devices as a fundamental constituent of the emerging spinoptics. In this review, based on the viewpoint of the geometric phase gradient, we give a detailed presentation of the recent advances in the SHE of light and its applications in precision metrology and future spin-based photonics.

  18. Effects of Enhanced Eathode Electron Emission on Hall Thruster Operation

    International Nuclear Information System (INIS)

    Raitses, Y.; Smirnov, A.; Fisch, N.J.

    2009-01-01

    Interesting discharge phenomena are observed that have to do with the interaction between the magnetized Hall thruster plasma and the neutralizing cathode. The steadystate parameters of a highly ionized thruster discharge are strongly influenced by the electron supply from the cathode. The enhancement of the cathode electron emission above its self-sustained level affects the discharge current and leads to a dramatic reduction of the plasma divergence and a suppression of large amplitude, low frequency discharge current oscillations usually related to an ionization instability. These effects correlate strongly with the reduction of the voltage drop in the region with the fringing magnetic field between the thruster channel and the cathode. The measured changes of the plasma properties suggest that the electron emission affects the electron cross-field transport in the thruster discharge. These trends are generalized for Hall thrusters of various configurations.

  19. Fast micro Hall effect measurements on small pads

    DEFF Research Database (Denmark)

    Østerberg, Frederik Westergaard; Petersen, Dirch Hjorth; Nielsen, Peter F.

    2011-01-01

    Sheet resistance, carrier mobility, and sheet carrier density are important parameters in semiconductor production, and it is therefore important to be able to rapidly and accurately measure these parameters even on small samples or pads. The interpretation of four-point probe measurements on small...... pads is non-trivial. In this paper we discuss how conformal mapping can be used to evaluate theoretically expected measurement values on small pads. Theoretical values calculated from analytical mappings of simple geometries are compared to the values found from the numerical conformal mapping...... of a square onto the infinite half-plane, where well-established solutions are known. Hall effect measurements are performed to show, experimentally, that it is possible to measure Hall mobility in less than one minute on squares as small as 7070 lm2 with a deviation of 66.5% on a 1r level from accurate...

  20. Quantum Hall effect in epitaxial graphene with permanent magnets.

    Science.gov (United States)

    Parmentier, F D; Cazimajou, T; Sekine, Y; Hibino, H; Irie, H; Glattli, D C; Kumada, N; Roulleau, P

    2016-12-06

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

  1. Spin Hall effect-driven spin torque in magnetic textures

    KAUST Repository

    Manchon, Aurelien

    2011-07-13

    Current-induced spin torque and magnetization dynamics in the presence of spin Hall effect in magnetic textures is studied theoretically. The local deviation of the charge current gives rise to a current-induced spin torque of the form (1 - ΒM) × [(u 0 + αH u 0 M) ∇] M, where u0 is the direction of the injected current, H is the Hall angle and is the non-adiabaticity parameter due to spin relaxation. Since αH and ×can have a comparable order of magnitude, we show that this torque can significantly modify the current-induced dynamics of both transverse and vortex walls. © 2011 American Institute of Physics.

  2. Admittance measurements in the quantum Hall effect regime

    Energy Technology Data Exchange (ETDEWEB)

    Hernández, C., E-mail: carlos.hernandezr@unimilitar.edu.co [Departamento de Física, Universidad Militar Nueva Granada, Carrera 11 # 101-80, Bogotá D.C. (Colombia); Laboratorio de Magnetismo, Departamento de Física, Universidad de los Andes, A.A. 4976, Bogotá D.C. (Colombia); Consejo, C.; Chaubet, C. [Laboratoire Charles Coulomb L2C, Université Montpellier II, Pl. E. Bataillon, 34095 Montpellier Cedex 5 (France)

    2014-11-15

    In this work we present an admittance study of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime. We have studied several Hall bars in different contacts configurations in the frequency range 100 Hz–1 MHz. Our interpretation is based on the Landauer–Büttiker theory and takes into account both the capacitance and the topology of the coaxial cables which are connected to the sample holder. We show that we always observe losses through the capacitive impedance of the coaxial cables, except in the two contacts configuration in which the cable capacitance does not influence the admittance measurement of the sample. In this case, we measure the electrochemical capacitance of the 2DEG and show its dependence with the filling factor ν.

  3. Hall effect in a strong magnetic field: Direct comparisons of compressible magnetohydrodynamics and the reduced Hall magnetohydrodynamic equations

    International Nuclear Information System (INIS)

    Martin, L. N.; Dmitruk, P.; Gomez, D. O.

    2010-01-01

    In this work we numerically test a model of Hall magnetohydrodynamics in the presence of a strong mean magnetic field: the reduced Hall magnetohydrodynamic model (RHMHD) derived by [Gomez et al., Phys. Plasmas 15, 102303 (2008)] with the addition of weak compressible effects. The main advantage of this model lies in the reduction of computational cost. Nevertheless, up until now the degree of agreement with the original Hall MHD system and the range of validity in a regime of turbulence were not established. In this work direct numerical simulations of three-dimensional Hall MHD turbulence in the presence of a strong mean magnetic field are compared with simulations of the weak compressible RHMHD model. The results show that the degree of agreement is very high (when the different assumptions of RHMHD, such as spectral anisotropy, are satisfied). Nevertheless, when the initial conditions are isotropic but the mean magnetic field is maintained strong, the results differ at the beginning but asymptotically reach a good agreement at relatively short times. We also found evidence that the compressibility still plays a role in the dynamics of these systems, and the weak compressible RHMHD model is able to capture these effects. In conclusion the weak compressible RHMHD model is a valid approximation of the Hall MHD turbulence in the relevant physical context.

  4. Anomalous size effect in conductivity of Bi films of small thickness

    International Nuclear Information System (INIS)

    Anopchenko, A.S.; Kashirin, V.Yu.; Komnik, Yu.F.

    1995-01-01

    Experimental data are obtained at helium temperature, which describe the kinetic properties (conductivity, magnetoresistance and Hall coefficient) of Bi films whose thicknesses are within 100-500 A. The small-thickness Bi films display an anomalous size effect- the growing conductivity at decreasing thickness, and pronounced quantum interference effects - weak electron localization and enhancing electron-electron interaction in a disordered system. The information derived on the kinetic properties of the films is used to identify the character of the changes in the electron and hole concentrations and mobilities with a decreasing thickness. The isotropy of the properties in the films plane due to the axial texture has permitted us to use the equations for a conductor with two types of charge carriers. The used kinetic characteristics correctly take into account the contribution of the quantum corrections related to quantum interference. It is found that the concentration of the charge carries increases appreciably (by about two orders of magnitude) as the film thickness decreases to 100 A, which determines the anomalous size effect in the conductivity of the films

  5. An edge index for the quantum spin-Hall effect

    International Nuclear Information System (INIS)

    Prodan, Emil

    2009-01-01

    Quantum spin-Hall systems are topological insulators displaying dissipationless spin currents flowing at the edges of the samples. In contradistinction to the quantum Hall systems where the charge conductance of the edge modes is quantized, the spin conductance is not and it remained an open problem to find the observable whose edge current is quantized. In this paper, we define a particular observable and the edge current corresponding to this observable. We show that this current is quantized and that the quantization is given by the index of a certain Fredholm operator. This provides a new topological invariant that is shown to take the generic values 0 and 2, in line with the Z 2 topological classification of time-reversal invariant systems. The result gives an effective tool for the investigation of the edge structure in quantum spin-Hall systems. Based on a reasonable assumption, we also show that the edge conducting channels are not destroyed by a random edge. (fast track communication)

  6. Hall effect and photoconductivity lifetime studies of gallium nitride, indium nitride, and mercury cadmium telluride

    Science.gov (United States)

    Swartz, Craig H.

    A deep understanding of both carrier recombination and transport is necessary for semiconductor engineering, particularly in defining the ultimate limits of performance for a given device before spending the resources to perfect its fabrication. Hall effect measurements utilizing a variable magnetic field are necessary to discriminate between conduction in epitaxial layers and conduction originating at the surface or at an interfacial layer. For thick hydride vapor phase epitaxy (HVPE) grown GaN, variable field Hall measurements revealed the presence of small but significant lower mobility surface and interface electrons which would otherwise lead to errors in interpreting the electrical properties. In addition, QMSA analysis of the measurements indicates that thick GaN samples contain a large spread in electron mobility values, most likely with depth. For molecular beam epitaxial InN, it was found that electrical measurements are affected by surface charge conduction, as well as the non-uniformity of mobility and carrier concentration with depth. Both of these effects mask the surprisingly high quality of the material close to the surface. Photoconductance lifetime and variable-magnetic-field Hall and transient measurements were performed on a series of undoped, In-doped and As-doped HgCdTe grown by MBE and MOCVD. N-type layers often significantly influence the interpretation of the electrical measurements. Even the best Low Wavelength Infrared (LWIR) n-type material still appears to be dominated by defect-related recombination, as intrinsic lifetimes calculated with full band structure can be well above those measured. Mid-Wavelength Infrared (MWIR) lifetimes increase somewhat with carrier concentration, as if the n-type doping process were passivating Schockley-Read-Hall (SRH) defects. P-type MWIR films lie mainly below the predicted values, and their relationship between concentration and lifetime is essentially unchanged by growth technique, indicating that a

  7. Spin-injection Hall effect in a planar photovoltaic cell

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Irvine, A.C.; Sinova, J.; Park, B.G.; Zarbo, L.P.; Xu, X.L.; Kaestner, B.; Novák, Vít; Jungwirth, Tomáš

    2009-01-01

    Roč. 5, č. 9 (2009), s. 675-681 ISSN 1745-2473 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002; GA ČR GEFON/06/E001 EU Projects: European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : extraordinary Hall effect s * spintronics * photvoltaics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 15.491, year: 2009

  8. TOPICAL REVIEW: Spin current, spin accumulation and spin Hall effect

    Directory of Open Access Journals (Sweden)

    Saburo Takahashi and Sadamichi Maekawa

    2008-01-01

    Full Text Available Nonlocal spin transport in nanostructured devices with ferromagnetic injector (F1 and detector (F2 electrodes connected to a normal conductor (N is studied. We reveal how the spin transport depends on interface resistance, electrode resistance, spin polarization and spin diffusion length, and obtain the conditions for efficient spin injection, spin accumulation and spin current in the device. It is demonstrated that the spin Hall effect is caused by spin–orbit scattering in nonmagnetic conductors and gives rise to the conversion between spin and charge currents in a nonlocal device. A method of evaluating spin–orbit coupling in nonmagnetic metals is proposed.

  9. Scalar spin chirality and quantum hall effect on triangular lattices

    Energy Technology Data Exchange (ETDEWEB)

    Martin, Ivar [Los Alamos National Laboratory; Batista, Cristian D [Los Alamos National Laboratory

    2008-01-01

    We study the Kondo Lattice and Hubbard models on a triangular lattice for band filling factor 3/4. We show that a simple non-coplanar chiral spin ordering (scalar spin chirality) is naturally realized in both models due to perfect nesting of the fermi surface. The resulting triple-Q magnetic ordering is a natural counterpart of the collinear Neel ordering of the half-filled square lattice Hubbard model. We show that the obtained chiral phase exhibits a spontaneous quantum Hall-effect with {sigma}{sub xy} = e{sup 2}/h.

  10. Quantum spin Hall effect in twisted bilayer graphene

    Science.gov (United States)

    Finocchiaro, F.; Guinea, F.; San-Jose, P.

    2017-06-01

    Motivated by a recent experiment (Sanchez-Yamagishi et al 2016 Nat. Nanotechnol. 214) reporting evidence of helical spin-polarized edge states in layer-biased twisted bilayer graphene under a magnetic flux, we study the possibility of stabilising a quantum spin Hall (QSH) phase in such a system, without Zeeman or spin-orbit couplings, and with a QSH gap induced instead by electronic interactions. We analyse how magnetic flux, electric field, interlayer rotation angle, and interactions (treated at a mean field level) combine to produce a pseudo-QSH with broken time-reversal symmetry, and spin-polarized helical edge states. The effect is a consequence of a robust interaction-induced ferrimagnetic ordering of the quantum Hall ground state under an interlayer bias, provided the two rotated layers are effectively decoupled at low energies. We discuss in detail the electronic structure and the constraints on system parameters, such as the angle, interactions and magnetic flux, required to reach the pseudo-QSH phase. We find, in particular, that purely local electronic interactions are not sufficient to account for the experimental observations, which demand at least nearest-neighbour interactions to be included.

  11. Theoretical study of spin Hall effect in conjugated Organic semiconductors

    Science.gov (United States)

    Mahani, M. R.; Delin, A.

    The spin Hall effect (SHE), a direct conversion between electronic and spin currents, is a rapidly growing branch of spintronics. The study of SHE in conjugated polymers has gained momentum recently due to the weak spin-orbit couplings and hyperfine interactions in these materials. Our calculations of SHE based on the recent work, are the result of the misalignment of pi-orbitals in triads consisting of three molecules. In disordered organics, where the electronic conduction is through hopping of the electrons among randomly oriented molecules, instead of identifying a hopping triad to represent the entire system, we numerically solve the master equations for electrical and spin hall conductivities by summing the contributions from all triads in a sufficiently large system. The interference between the direct and indirect hoppings in these triads leads to SHE proportional to the orientation vector of molecule at the first order of spin-orbit coupling. Hence, our results show, the degree of molecular alignment as well as the strength of the spin-orbit coupling can be used to control the SHE in organics.

  12. Photonic spin Hall effect in metasurfaces: a brief review

    Directory of Open Access Journals (Sweden)

    Liu Yachao

    2016-07-01

    Full Text Available The photonic spin Hall effect (SHE originates from the interplay between the photon-spin (polarization and the trajectory (extrinsic orbital angular momentum of light, i.e. the spin-orbit interaction. Metasurfaces, metamaterials with a reduced dimensionality, exhibit exceptional abilities for controlling the spin-orbit interaction and thereby manipulating the photonic SHE. Spin-redirection phase and Pancharatnam-Berry phase are the manifestations of spin-orbit interaction. The former is related to the evolution of the propagation direction and the latter to the manipulation with polarization state. Two distinct forms of splitting based on these two types of geometric phases can be induced by the photonic SHE in metasurfaces: the spin-dependent splitting in position space and in momentum space. The introduction of Pacharatnam-Berry phases, through space-variant polarization manipulations with metasurfaces, enables new approaches for fabricating the spin-Hall devices. Here, we present a short review of photonic SHE in metasurfaces and outline the opportunities in spin photonics.

  13. Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Gudina, S. V., E-mail: svpopova@imp.uran.ru; Arapov, Yu. G.; Saveliev, A. P.; Neverov, V. N.; Podgornykh, S. M.; Shelushinina, N. G.; Yakunin, M. V. [Russian Academy of Sciences, Mikheev Institute of Metal Physics, Ural Branch (Russian Federation); Vasil’evskii, I. S.; Vinichenko, A. N. [National Research Nuclear University MEPhI (Russian Federation)

    2016-12-15

    The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the n-InGaAs/InAlAs heterostructures at temperatures of T = (1.8–30) K in magnetic fields up to B = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of hopping conductivity in a strongly localized electron system. The analysis of variable-range hopping conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent.

  14. Magnetic bilayer-skyrmions without skyrmion Hall effect

    Science.gov (United States)

    Zhang, Xichao; Zhou, Yan; Ezawa, Motohiko

    2016-01-01

    Magnetic skyrmions might be used as information carriers in future advanced memories, logic gates and computing devices. However, there exists an obstacle known as the skyrmion Hall effect (SkHE), that is, the skyrmion trajectories bend away from the driving current direction due to the Magnus force. Consequently, the skyrmions in constricted geometries may be destroyed by touching the sample edges. Here we theoretically propose that the SkHE can be suppressed in the antiferromagnetically exchange-coupled bilayer system, since the Magnus forces in the top and bottom layers are exactly cancelled. We show that such a pair of SkHE-free magnetic skyrmions can be nucleated and be driven by the current-induced torque. Our proposal provides a promising means to move magnetic skyrmions in a perfectly straight trajectory in ultra-dense devices with ultra-fast processing speed.

  15. Micro-four-point Probe Hall effect Measurement method

    DEFF Research Database (Denmark)

    Petersen, Dirch Hjorth; Hansen, Ole; Lin, Rong

    2008-01-01

    contributions may be separated using dual configuration measurements. The method differs from conventional van der Pauw measurements since the probe pins are placed in the interior of the sample region, not just on the perimeter. We experimentally verify the method by micro-four-point probe measurements...... on ultrashallow junctions in silicon and germanium. On a cleaved silicon ultrashallow junction sample we determine carrier mobility, sheet carrier density, and sheet resistance from micro-four-point probe measurements under various experimental conditions, and show with these conditions reproducibility within...... barriers and with a magnetic field applied normal to the plane of the sheet. Based on this potential, analytical expressions for the measured four-point resistance in presence of a magnetic field are derived for several simple sample geometries. We show how the sheet resistance and Hall effect...

  16. On-Chip Magnetorelaxometry Using Planar Hall Effect Magnetic Field Sensors

    DEFF Research Database (Denmark)

    Østerberg, Frederik Westergaard

    with streptavidin coated beads and biotin-conjugated bovine serum albumin show that planar Hall effect sensors can detect the presence of biotin-conjugated bovine serum albumin in the nanomolar range. Finally, measurements are performed to detect DNA-coils formed by rolling amplification using planar Hall effect...

  17. Experimental Verification of the Hall Effect during Magnetic Reconnection in a Laboratory Plasma

    International Nuclear Information System (INIS)

    Yang Ren; Masaaki Yamada; Stefan Gerhardt; Hantao Ji; Russell Kulsrud; Aleksey Kuritsyn

    2005-01-01

    In this letter we report a clear and unambiguous observation of the out-of-plane quadrupole magnetic field suggested by numerical simulations in the reconnecting current sheet in the Magnetic Reconnection Experiment (MRX). Measurements show that the Hall effect is large in collisionless regime and becomes small as the collisionality increases, indicating that the Hall effect plays an important role in collisionless reconnection

  18. Urbanization effects on natural radiation in anomalous areas

    International Nuclear Information System (INIS)

    Affonseca, M.S. de.

    1993-10-01

    The urbanization effects and their possible causes on the environmental gamma radiation levels, in an anomalous area, were studied. The field work was accomplished in Guarapari, located in the seacoast of the Brazilian state of Espirito Santo, which is rich in monazite sands, with thorium and uranium contents. The results show clearly that there was a reduction in the levels of external exposition in the streets and squares of Guarapari. It was ascertained that the reduction was due to the materials used in the urbanization. (L.C.J.A.)

  19. Electrostatic Turbulence and Anomalous Effects in Reconnection Diffusion Region

    Science.gov (United States)

    Khotyaintsev, Y. V.; Graham, D. B.; Norgren, C.; Vaivads, A.; Li, W.; Divin, A. V.; Andre, M.; Markidis, S.; Lindqvist, P. A.; Peng, I. B.; Argall, M. R.; Ergun, R.; Le Contel, O.; Magnes, W.; Russell, C. T.; Giles, B. L.; Torbert, R. B.; Burch, J. L.

    2017-12-01

    Magnetic reconnection is a fundamental process whereby microscopicplasma processes cause macroscopic changes in magnetic field topology,so that initially separated plasmas become magnetically connected.Waves can produce particle diffusion, and anomalous resistivity, aswell as heat the plasma and accelerate plasma particles, all of whichcan impact ongoing reconnection. We report electrostatic turbulencedeveloping within the diffusion region of asymmetric magnetopausereconnection using observations by the Magnetospheric Multiscalemission and large-scale particle-in-cell simulations, and characterizeanomalous effects and plasma heating within the diffusion region. Ourobservations demonstrate that electrostatic turbulence plays animportant role in the electron-scale physics of asymmetricreconnection.

  20. Effective Field Theory of Fractional Quantized Hall Nematics

    Energy Technology Data Exchange (ETDEWEB)

    Mulligan, Michael; /MIT, LNS; Nayak, Chetan; /Station Q, UCSB; Kachru, Shamit; /Stanford U., Phys. Dept. /SLAC

    2012-06-06

    We present a Landau-Ginzburg theory for a fractional quantized Hall nematic state and the transition to it from an isotropic fractional quantum Hall state. This justifies Lifshitz-Chern-Simons theory - which is shown to be its dual - on a more microscopic basis and enables us to compute a ground state wave function in the symmetry-broken phase. In such a state of matter, the Hall resistance remains quantized while the longitudinal DC resistivity due to thermally-excited quasiparticles is anisotropic. We interpret recent experiments at Landau level filling factor {nu} = 7/3 in terms of our theory.

  1. Hall effect in the normal phase of the organic superconductor (TMTSF)2PF6

    DEFF Research Database (Denmark)

    Moser, J.; Cooper, J.R.; Jerome, D.

    2000-01-01

    We report accurate Hall effect measurements performed in the normal phase of the quasi-one-dimensional organic conductor (TMTSF)(2)PF(6) at ambient pressure. The Hall coefficient is found to be strongly temperature dependent all the way from 300 K down to the spin density wave onset arising around...

  2. Hall and ion slip effects on peristaltic flow of Jeffrey nanofluid with Joule heating

    Energy Technology Data Exchange (ETDEWEB)

    Hayat, T. [Department of Mathematics, Quaid-I-Azam University 45320, Islamabad 44000 (Pakistan); NAAM Research Group, Department of Mathematics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Shafique, Maryam [Department of Mathematics, Quaid-I-Azam University 45320, Islamabad 44000 (Pakistan); Tanveer, A., E-mail: anum@math.qau.edu.pk [Department of Mathematics, Quaid-I-Azam University 45320, Islamabad 44000 (Pakistan); Alsaedi, A. [NAAM Research Group, Department of Mathematics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

    2016-06-01

    This paper addresses mixed convective peristaltic flow of Jeffrey nanofluid in a channel with complaint walls. The present investigation includes the viscous dissipation, thermal radiation and Joule heating. Hall and ion slip effects are also taken into account. Related problems through long wavelength and low Reynolds number are examined for stream function, temperature and concentration. Impacts of thermal radiation, Hartman number, Brownian motion parameter, thermophoresis, Joule heating, Hall and ion slip parameters are investigated in detail. It is observed that velocity increases and temperature decreases with Hall and ion slip parameters. Further the thermal radiation on temperature has qualitatively similar role to that of Hall and ion slip effects. - Highlights: • Peristalsis in the presence of Jeffery nanofluid is formulated. • Compliant properties of channel walls are addressed. • Impact of Hall and ion slip effects is outlined. • Influence of Joule heating and radiation is investigated. • Mixed convection for both heat and mass transfer is present.

  3. Edge states and integer quantum Hall effect in topological insulator thin films.

    Science.gov (United States)

    Zhang, Song-Bo; Lu, Hai-Zhou; Shen, Shun-Qing

    2015-08-25

    The integer quantum Hall effect is a topological state of quantum matter in two dimensions, and has recently been observed in three-dimensional topological insulator thin films. Here we study the Landau levels and edge states of surface Dirac fermions in topological insulators under strong magnetic field. We examine the formation of the quantum plateaux of the Hall conductance and find two different patterns, in one pattern the filling number covers all integers while only odd integers in the other. We focus on the quantum plateau closest to zero energy and demonstrate the breakdown of the quantum spin Hall effect resulting from structure inversion asymmetry. The phase diagrams of the quantum Hall states are presented as functions of magnetic field, gate voltage and chemical potential. This work establishes an intuitive picture of the edge states to understand the integer quantum Hall effect for Dirac electrons in topological insulator thin films.

  4. What do you measure when you measure the Hall effect?

    Science.gov (United States)

    Koon, D. W.; Knickerbocker, C. J.

    1993-02-01

    A formalism for calculating the sensitivity of Hall measurements to local inhomogeneities of the sample material or the magnetic field is developed. This Hall weighting function g(x,y) is calculated for various placements of current and voltage probes on square and circular laminar samples. Unlike the resistivity weighting function, it is nonnegative throughout the entire sample, provided all probes lie at the edge of the sample. Singularities arise in the Hall weighting function near the current and voltage probes except in the case where these probes are located at the corners of a square. Implications of the results for cross, clover, and bridge samples, and the implications of our results for metal-insulator transition and quantum Hall studies are discussed.

  5. Dual-wavelength photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity

    Science.gov (United States)

    Musiienko, A.; Grill, R.; Moravec, P.; Korcsmáros, G.; Rejhon, M.; Pekárek, J.; Elhadidy, H.; Šedivý, L.; Vasylchenko, I.

    2018-04-01

    Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobility was chosen for the detailed study involving measurements at both the steady and dynamic regimes. We revealed that the Hall mobility and photoconductivity can be both enhanced and suppressed by an additional illumination at certain photon energies. The anomalous mobility decrease was explained by an excitation of the inhomogeneously distributed deep level at the energy Ev + 1.0 eV, thus enhancing potential non-uniformities. The appearance of negative differential photoconductivity was interpreted by an intensified electron occupancy of that level by a direct valence band-to-level excitation. Modified Shockley-Read-Hall theory was used for fitting experimental results by a model comprising five deep levels. Properties of the deep levels and their impact on the device performance were deduced.

  6. Quantum spin/valley Hall effect and topological insulator phase transitions in silicene

    KAUST Repository

    Tahir, M.

    2013-04-26

    We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality point. This phase transition from a two dimensional topological insulator to a trivial insulating state is accompanied by a quenching of the quantum spin Hall effect and the onset of a quantum valley Hall effect, providing a tool to experimentally tune the topological state of silicene. In contrast to graphene and other conventional topological insulators, the proposed effects in silicene are accessible to experiments.

  7. Thermal stability of the krypton Hall effect thruster

    Directory of Open Access Journals (Sweden)

    Szelecka Agnieszka

    2017-03-01

    Full Text Available The Krypton Large IMpulse Thruster (KLIMT ESA/PECS project, which has been implemented in the Institute of Plasma Physics and Laser Microfusion (IPPLM and now is approaching its final phase, was aimed at incremental development of a ~500 W class Hall effect thruster (HET. Xenon, predominantly used as a propellant in the state-of-the-art HETs, is extremely expensive. Krypton has been considered as a cheaper alternative since more than fifteen years; however, to the best knowledge of the authors, there has not been a HET model especially designed for this noble gas. To address this issue, KLIMT has been geared towards operation primarily with krypton. During the project, three subsequent prototype versions of the thruster were designed, manufactured and tested, aimed at gradual improvement of each next exemplar. In the current paper, the heat loads in new engine have been discussed. It has been shown that thermal equilibrium of the thruster is gained within the safety limits of the materials used. Extensive testing with both gases was performed to compare KLIMT’s thermal behaviour when supplied with krypton and xenon propellants.

  8. Robust electron pairing in the integer quantum hall effect regime.

    Science.gov (United States)

    Choi, H K; Sivan, I; Rosenblatt, A; Heiblum, M; Umansky, V; Mahalu, D

    2015-06-22

    Electron pairing is a rare phenomenon appearing only in a few unique physical systems; for example, superconductors and Kondo-correlated quantum dots. Here, we report on an unexpected electron pairing in the integer quantum Hall effect regime. The pairing takes place within an interfering edge channel in an electronic Fabry-Perot interferometer at a wide range of bulk filling factors, between 2 and 5. We report on three main observations: high-visibility Aharonov-Bohm conductance oscillations with magnetic flux periodicity equal to half the magnetic flux quantum; an interfering quasiparticle charge equal to twice the elementary electron charge as revealed by quantum shot noise measurements, and full dephasing of the pairs' interference by induced dephasing of the adjacent inner edge channel-a manifestation of inter-channel entanglement. Although this pairing phenomenon clearly results from inter-channel interaction, the exact mechanism that leads to electron-electron attraction within a single edge channel is not clear. We believe that substantial efforts are needed in order to clarify these intriguing and unexpected findings.

  9. Modular invariance, universality and crossover in the quantum Hall effect

    International Nuclear Information System (INIS)

    Dolan, Brian P.

    1999-01-01

    An analytic form for the conductivity tensor in crossover between two quantum Hall plateaux is derived, which appears to be in good agreement with existing experimental data. The derivation relies on an assumed symmetry between quantum Hall states, a generalisation of the law of corresponding states from rational filling factors to complex conductivity, which has a mathematical expression in terms of an action of the modular group on the upper-half complex conductivity plane. This symmetry implies universality in quantum Hall crossovers. The assumption that the β-function for the complex conductivity is a complex analytic function, together with some experimental constraints, results in an analytic expression for the crossover, as a function of the external magnetic field

  10. On the gauge invariant and topological nature of the localization determining the Quantum Hall Effect plateaus

    CERN Document Server

    Cabo-Montes de Oca, Alejandro

    2002-01-01

    It is shown how the electromagnetic response of 2DEG under Quantum Hall Effect regime, characterized by the Chern-Simons topological action, transforms the sample impurities and defects in charge-reservoirs that stabilize the Hall conductivity plateaus. The results determine the basic dynamical origin of the singular properties of localization under the occurrence of the Quantum Hall Effect obtained in the pioneering works of Laughlin and of Joynt and Prange, by means of a gauge invariance argument and a purely electronic analysis, respectively. The common intuitive picture of electrons moving along the equipotential lines gets an analytical realization through the Chern-Simons current and charge densities.

  11. Theory of spin Hall effect: extension of the Drude model.

    Science.gov (United States)

    Chudnovsky, Eugene M

    2007-11-16

    An extension of the Drude model is proposed that accounts for the spin and spin-orbit interaction of charge carriers. Spin currents appear due to the combined action of the external electric field, crystal field, and scattering of charge carriers. The expression for the spin Hall conductivity is derived for metals and semiconductors that is independent of the scattering mechanism. In cubic metals, the spin Hall conductivity sigma s and charge conductivity sigma c are related through sigma s=[2pi variant /(3mc2)]sigma2c with m being the bare electron mass. The theoretically computed value is in agreement with experiment.

  12. Enhanced thermoelectric response in the fractional quantum Hall effect

    Science.gov (United States)

    Roura-Bas, Pablo; Arrachea, Liliana; Fradkin, Eduardo

    2018-02-01

    We study the linear thermoelectric response of a quantum dot embedded in a constriction of a quantum Hall bar with fractional filling factors ν =1 /m within Laughlin series. We calculate the figure of merit Z T for the maximum efficiency at a fixed temperature difference. We find a significant enhancement of this quantity in the fractional filling in relation to the integer-filling case, which is a direct consequence of the fractionalization of the electron in the fractional quantum Hall state. We present simple theoretical expressions for the Onsager coefficients at low temperatures, which explicitly show that Z T and the Seebeck coefficient increase with m .

  13. Observation of orbital resonance Hall effect in (TMTSF)2ClO4.

    Science.gov (United States)

    Kobayashi, Kaya; Satsukawa, H; Yamada, J; Terashima, T; Uji, S

    2014-03-21

    We report the observation of a Hall effect driven by orbital resonance in the quasi-1-dimensional (q1D) organic conductor (TMTSF)2ClO4. Although a conventional Hall effect is not expected in this class of materials due to their reduced dimensionality, we observed a prominent Hall response at certain orientations of the magnetic field B corresponding to lattice vectors of the constituent molecular chains, known as the magic angles (MAs). We show that this Hall effect can be understood as the response of conducting planes generated by an effective locking of the orbital motion of the charge carriers to the MA driven by an electron-trajectory resonance. This phenomenon supports a class of theories describing the rich behavior of MA phenomena in q1D materials based on altered dimensionality. Furthermore, we observed that the effective carrier density of the conducting planes is exponentially suppressed in large B, which indicates possible density wave formation.

  14. Preliminary Results of Performance Measurements on a Cylindrical Hall-Effect Thruster with Magnetic Field Generated by Permanent Magnets

    Science.gov (United States)

    Polzin, K. A.; Raitses, Y.; Merino, E.; Fisch, N. J.

    2008-01-01

    The performance of a low-power cylindrical Hall thruster, which more readily lends itself to miniaturization and low-power operation than a conventional (annular) Hall thruster, was measured using a planar plasma probe and a thrust stand. The field in the cylindrical thruster was produced using permanent magnets, promising a power reduction over previous cylindrical thruster iterations that employed electromagnets to generate the required magnetic field topology. Two sets of ring-shaped permanent magnets are used, and two different field configurations can be produced by reorienting the poles of one magnet relative to the other. A plasma probe measuring ion flux in the plume is used to estimate the current utilization for the two magnetic configurations. The measurements indicate that electron transport is impeded much more effectively in one configuration, implying a higher thrust efficiency. Preliminary thruster performance measurements on this configuration were obtained over a power range of 100-250 W. The thrust levels over this power range were 3.5-6.5 mN, with anode efficiencies and specific impulses spanning 14-19% and 875- 1425 s, respectively. The magnetic field in the thruster was lower for the thrust measurements than the plasma probe measurements due to heating and weakening of the permanent magnets, reducing the maximum field strength from 2 kG to roughly 750-800 G. The discharge current levels observed during thrust stand testing were anomalously high compared to those levels measured in previous experiments with this thruster.

  15. Investigation of magnetic proximity effect in Ta/YIG bilayer Hall bar structure

    International Nuclear Information System (INIS)

    Yang, Yumeng; Wu, Baolei; Wu, Yihong; Yao, Kui; Shannigrahi, Santiranjan; Zong, Baoyu

    2014-01-01

    In this work, the investigation of magnetic proximity effect was extended to Ta which has been reported to have a negative spin Hall angle. Magnetoresistance (MR) and Hall measurements for in-plane and out-of-plane applied magnetic field sweeps were carried out at room temperature. The size of the MR ratio observed (∼10 −5 ) and its magnetization direction dependence are similar to that reported in Pt/yttrium iron garnet, both of which can be explained by the spin Hall magnetoresistance theory. Additionally, a flip of magnetoresistance polarity is observed at 4 K in the temperature dependent measurements, which can be explained by the magnetic proximity effect induced anisotropic magnetoresistance at low temperature. Our findings suggest that both magnetic proximity effect and spin Hall magnetoresistance have contribution to the recently observed unconventional magnetoresistance effect

  16. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) Power Processing Unit (PPU) for Hall Effect...

  17. Quantum Hall effect in graphene with interface-induced spin-orbit coupling

    Science.gov (United States)

    Cysne, Tarik P.; Garcia, Jose H.; Rocha, Alexandre R.; Rappoport, Tatiana G.

    2018-02-01

    We consider an effective model for graphene with interface-induced spin-orbit coupling and calculate the quantum Hall effect in the low-energy limit. We perform a systematic analysis of the contribution of the different terms of the effective Hamiltonian to the quantum Hall effect (QHE). By analyzing the spin splitting of the quantum Hall states as a function of magnetic field and gate voltage, we obtain different scaling laws that can be used to characterize the spin-orbit coupling in experiments. Furthermore, we employ a real-space quantum transport approach to calculate the quantum Hall conductivity and investigate the robustness of the QHE to disorder introduced by hydrogen impurities. For that purpose, we combine first-principles calculations and a genetic algorithm strategy to obtain a graphene-only Hamiltonian that models the impurity.

  18. Ultra-Compact Center-Mounted Hollow Cathodes for Hall Effect Thrusters, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed innovation is a long lifetime, compact hollow cathode that can be mounted along the axis of a 600 W-class Hall effect thruster. Testing at kilowatt...

  19. Design and performance evaluation of a hall effect magnetic compass for oceanographic and meteorological applications

    Digital Repository Service at National Institute of Oceanography (India)

    Joseph, A.; Desai, R.G.P.; Agarvadekar, Y.; Tengali, T.; Mishra, M.; Fadate, C.; Gomes, L.

    A Hall Effect magnetic compass, suitable for oceanographic and meteorological applications, has been designed and its performance characteristics have been evaluated. Slope of the least-squares-fitted linear graph was found to be close to the ideal...

  20. Analysis of Air Breathing Hall-Effect Thruster (Preprint)

    Science.gov (United States)

    2011-08-01

    even more attractive because of multi -years sateJiite missions and high cost of payloads. In a recent paper [I), Diamant has proposed a two-stage...at higher orbital altitude. References ( I) Diamant K. D., "A 2-Stage Cylindrical Hall Thruster for Air Breathing Electrical Propulsion," 46’" AJAA

  1. Mechanism of plateau formation in the fractional quantum Hall effect

    International Nuclear Information System (INIS)

    Bruus, H.; Hansen, O.P.; Hansen, E.B.

    1988-01-01

    Laughlin's fractionally charged quasi-holes and quasi-electrons are assumed to be pinned, and to be subject to a force j vectorxΦ 0 vector from the transport current. A force balance argument then explains the existence of Hall plateaus. (orig.)

  2. Thermal Hall Effect in a Phonon-Glass Ba3 CuSb2 O9

    Science.gov (United States)

    Sugii, K.; Shimozawa, M.; Watanabe, D.; Suzuki, Y.; Halim, M.; Kimata, M.; Matsumoto, Y.; Nakatsuji, S.; Yamashita, M.

    2017-04-01

    A distinct thermal Hall signal is observed in a quantum spin liquid candidate Ba3 CuSb2 O9 . The transverse thermal conductivity shows a power-law temperature dependence below 50 K, where a spin gap opens. We suggest that because of the very low longitudinal thermal conductivity and the thermal Hall signals, a phonon Hall effect is induced by strong phonon scattering of orphan Cu2 + spins formed in the random domains of the Cu2 + -Sb5 + dumbbells in Ba3 CuSb2 O9 .

  3. The Quantum Hall Effect: Poincare Seminar (Progress in Mathematical Physics)

    Energy Technology Data Exchange (ETDEWEB)

    D' Ambrumeni, N H [Department of Physics, Warwick University, Coventry CV4 7AL (United Kingdom)

    2007-10-05

    The Seminaire Poincare provides hopefully accessible, accurate and up-to-date reviews of important topics in physics. The seminar usually invites people from both experiment and theory to discuss aspects of the topic. Recent topics, including Entropy (2003), Einstein (2005), and Quantum Decoherence (2005), demonstrate a determination on the part of the organisers to keep the seminar attractive to almost anyone active in physics and to avoid becoming too focused on a specialist area of research. A seminar on the quantum hall effect (QHE) was held in 2004. There were presentations by Klaus von Klitzing (Historical overview), Benoit Doucot and Vincent Pasquier (Introductory Theory), Blaise Jeanneret and Beat Jeckelman (QHE as an electrical resistance standard), Steven Girvin (Introduction to the Fractional QHE) and by Christian Glattli (Tunneling in the FQHE regime). This book is the collection of their contributions. The QHE as a field is already well-served by a small number of excellent books containing original articles by collections of authors and by a reprint volume, so it was not at all clear what a new volume could contribute. Well, this seminar has found something. It concentrates on experimental aspects not so often reviewed and keeps the theory as non-technical as possible. The introductory notes on the theory of electrons in a strong magnetic field give a beautiful explanation of the background theory. In the rush to get onto the technically challenging theory, this material is often assumed part of everyone's background knowledge or it is oversimplified. At the level of a first year graduate student/final year masters student, the chapter takes the reader carefully through projection onto a Landau level, Laughlin's original argument for the quantization of the Hall effect and the link to a topological invariant. Steve Girvin's chapter is at approximately the same level. It covers introductory material on the Laughlin wavefunction and its

  4. Fuzzy spaces, the M(atrix) model and the quantum Hall effect

    International Nuclear Information System (INIS)

    Karabali, Dimitra; Nair, V.P.; Randjbar-Daem, S.

    2004-06-01

    This is a short review of recent work on fuzzy spaces in their relation to the M(atrix) theory and the quantum Hall effect. We give an introduction to fuzzy spaces and how the limit of large matrices is obtained. The complex projective spaces CP k , and to a lesser extent spheres, are considered. Quantum Hall effect and the behavior of edge excitations of a droplet of fermions on these spaces and their relation to fuzzy spaces are also discussed. (author)

  5. Characterization of Hall effect thruster propellant distributors with flame visualization

    Science.gov (United States)

    Langendorf, S.; Walker, M. L. R.

    2013-01-01

    A novel method for the characterization and qualification of Hall effect thruster propellant distributors is presented. A quantitative measurement of the azimuthal number density uniformity, a metric which impacts propellant utilization, is obtained from photographs of a premixed flame anchored on the exit plane of the propellant distributor. The technique is demonstrated for three propellant distributors using a propane-air mixture at reservoir pressure of 40 psi (gauge) (377 kPa) exhausting to atmosphere, with volumetric flow rates ranging from 15-145 cfh (7.2-68 l/min) with equivalence ratios from 1.2 to 2.1. The visualization is compared with in-vacuum pressure measurements 1 mm downstream of the distributor exit plane (chamber pressure held below 2.7 × 10-5 Torr-Xe at all flow rates). Both methods indicate a non-uniformity in line with the propellant inlet, supporting the validity of the technique of flow visualization with flame luminosity for propellant distributor characterization. The technique is applied to a propellant distributor with a manufacturing defect in a known location and is able to identify the defect and characterize its impact. The technique is also applied to a distributor with numerous small orifices at the exit plane and is able to resolve the resulting non-uniformity. Luminosity data are collected with a spatial resolution of 48.2-76.1 μm (pixel width). The azimuthal uniformity is characterized in the form of standard deviation of azimuthal luminosities, normalized by the mean azimuthal luminosity. The distributors investigated achieve standard deviations of 0.346 ± 0.0212, 0.108 ± 0.0178, and 0.708 ± 0.0230 mean-normalized luminosity units respectively, where a value of 0 corresponds to perfect uniformity and a value of 1 represents a standard deviation equivalent to the mean.

  6. Quantum Hall effect in ac driven graphene: From the half-integer to the integer case

    Science.gov (United States)

    Ding, Kai-He; Lim, Lih-King; Su, Gang; Weng, Zheng-Yu

    2018-01-01

    We theoretically study the quantum Hall effect (QHE) in graphene with an ac electric field. Based on the tight-binding model, the structure of the half-integer Hall plateaus at σxy=±(n +1 /2 ) 4 e2/h (n is an integer) gets qualitatively changed with the addition of new integer Hall plateaus at σxy=±n (4 e2/h ) starting from the edges of the band center regime towards the band center with an increasing ac field. Beyond a critical field strength, a Hall plateau with σxy=0 can be realized at the band center, hence fully restoring a conventional integer QHE with particle-hole symmetry. Within a low-energy Hamiltonian for Dirac cones merging, we show a very good agreement with the tight-binding calculations for the Hall plateau transitions. We also obtain the band structure for driven graphene ribbons to provide a further understanding on the appearance of the new Hall plateaus, showing a trivial insulator behavior for the σxy=0 state. In the presence of disorder, we numerically study the disorder-induced destruction of the quantum Hall states in a finite driven sample and find that qualitative features known in the undriven disordered case are maintained.

  7. Investigation of the spin Seebeck effect and anomalous Nernst effect in a bulk carbon material

    Science.gov (United States)

    Wongjom, Poramed; Pinitsoontorn, Supree

    2018-03-01

    Since the discovery of the spin Seebeck effect (SSE) in 2008, it has become one of the most active topics in the spin caloritronics research field. It opened up a new way to create the spin current by a combination of magnetic fields and heat. The SSE was observed in many kinds of materials including metallic, semiconductor, or insulating magnets, as well as non-magnetic materials. On the other hand, carbon-based materials have become one of the most exciting research areas recently due to its low cost, abundance and some exceptional functionalities. In this work, we have investigated the possibility of the SSE in bulk carbon materials for the first time. Thin platinum film (Pt), coated on the smoothened surface of the bulk carbon, was used as the spin detector via the inverse spin Hall effect (ISHE). The experiment for observing longitudinal SSE in the bulk carbon was set up by applying a magnetic field up to 30 kOe to the sample with the direction perpendicular to the applied temperature gradient. The induced voltage from the SSE was extracted. However, for conductive materials, e.g. carbon, the voltage signal under this set up could be a combination of the SSE and the anomalous Nernst effect (ANE). Therefore, two measurement configurations were carried out, i.e. the in-plane magnetization (IM), and the perpendicular-to-plane magnetization (PM). For the IM configuration, the SSE + ANE signals were detected where as the only ANE signal existed in the PM configuration. The results showed that there were the differences between the voltage signals from the IM and PM configurations implying the possibility of the SSE in the bulk carbon material. Moreover, it was found that the difference in the IM and PM signals was a function of the magnetic field strength, temperature difference, and measurement temperature. Although the magnitude of the possible SSE voltage in this experiment was rather low (less than 0.5 μV at 50 K), this research showed that potential of using

  8. Mechanisms of the anomalous Pockels effect in bulk water

    Science.gov (United States)

    Yukita, Shunpei; Suzuki, Yuto; Shiokawa, Naoyuki; Kobayashi, Takayoshi; Tokunaga, Eiji

    2018-04-01

    The "anomalous" Pockels effect is a phenomenon that a light beam passing between two electrodes in an aqueous electrolyte solution is deflected by an AC voltage applied between the electrodes: the deflection angle is proportional to the voltage such that the incident beam alternately changes its direction. This phenomenon, the Pockels effect in bulk water, apparently contradicts what is believed in nonlinear optics, i.e., macroscopic inversion symmetry should be broken for the second-order nonlinear optical effect to occur such as the first-order electro-optic effect, i.e., the Pockels effect. To clarify the underlying mechanism, the dependence of the effect on the electrode material is investigated to find that the Pockels coefficient with Pt electrodes is two orders of magnitude smaller than with indium tin oxide (ITO) electrodes. It is experimentally confirmed that the Pockels effect of interfacial water in the electric double layer (EDL) on these electrodes shows an electrode dependence similar to the effect in bulk water while the effects depend on the frequency of the AC voltage such that the interfacial signal decreases with frequency but the bulk signal increases with frequency up to 221 Hz. These experimental results lead to a conclusion that the beam deflection is caused by the refractive index gradient in the bulk water region, which is formed transiently by the Pockels effect of interfacial water in the EDL when an AC electric field is applied. The refractive index gradient is caused by the diffuse layer spreading into the bulk region to work as a breaking factor of inversion symmetry of bulk water due to its charge-biased ionic distribution. This mechanism does not contradict the principle of nonlinear optics.

  9. 3D Quantum Hall Effect of Fermi Arc in Topological Semimetals

    Science.gov (United States)

    Wang, C. M.; Sun, Hai-Peng; Lu, Hai-Zhou; Xie, X. C.

    2017-09-01

    The quantum Hall effect is usually observed in 2D systems. We show that the Fermi arcs can give rise to a distinctive 3D quantum Hall effect in topological semimetals. Because of the topological constraint, the Fermi arc at a single surface has an open Fermi surface, which cannot host the quantum Hall effect. Via a "wormhole" tunneling assisted by the Weyl nodes, the Fermi arcs at opposite surfaces can form a complete Fermi loop and support the quantum Hall effect. The edge states of the Fermi arcs show a unique 3D distribution, giving an example of (d -2 )-dimensional boundary states. This is distinctly different from the surface-state quantum Hall effect from a single surface of topological insulator. As the Fermi energy sweeps through the Weyl nodes, the sheet Hall conductivity evolves from the 1 /B dependence to quantized plateaus at the Weyl nodes. This behavior can be realized by tuning gate voltages in a slab of topological semimetal, such as the TaAs family, Cd3 As2 , or Na3Bi . This work will be instructive not only for searching transport signatures of the Fermi arcs but also for exploring novel electron gases in other topological phases of matter.

  10. 3D Quantum Hall Effect of Fermi Arcs in Topological Semimetals.

    Science.gov (United States)

    Wang, C M; Sun, Hai-Peng; Lu, Hai-Zhou; Xie, X C

    2017-09-29

    The quantum Hall effect is usually observed in 2D systems. We show that the Fermi arcs can give rise to a distinctive 3D quantum Hall effect in topological semimetals. Because of the topological constraint, the Fermi arc at a single surface has an open Fermi surface, which cannot host the quantum Hall effect. Via a "wormhole" tunneling assisted by the Weyl nodes, the Fermi arcs at opposite surfaces can form a complete Fermi loop and support the quantum Hall effect. The edge states of the Fermi arcs show a unique 3D distribution, giving an example of (d-2)-dimensional boundary states. This is distinctly different from the surface-state quantum Hall effect from a single surface of topological insulator. As the Fermi energy sweeps through the Weyl nodes, the sheet Hall conductivity evolves from the 1/B dependence to quantized plateaus at the Weyl nodes. This behavior can be realized by tuning gate voltages in a slab of topological semimetal, such as the TaAs family, Cd_{3}As_{2}, or Na_{3}Bi. This work will be instructive not only for searching transport signatures of the Fermi arcs but also for exploring novel electron gases in other topological phases of matter.

  11. Experimental approach of plasma supersonic expansion physics and of Hall effect propulsion systems

    International Nuclear Information System (INIS)

    Mazouffre, Stephane

    2009-01-01

    This report for accreditation to supervise research (HDR) proposes a synthesis of scientific and research works performed by the author during about ten years. Thus, a first part addresses studies on plasma rarefied supersonic flows: expansion through a sonic hole and through a Laval nozzle. The next part addresses the study of plasma propulsion for spacecraft, and more particularly electric propulsion based on the Hall effect: phenomena of ionic and atomic transport, characteristics of the electric field, energy deposition on walls, basic scale laws, related works, hybrid Hall-RF propulsion systems. The third part presents perspectives and projects related to propulsion by Hall effect (research topics, planned researches, a European project on high power, hybrid Hall-RF propulsion) and to ions-ions plasma (the PEGASES concept, the NExET test installation, RF source of negative ions and magnetic trap)

  12. Understanding the physics of a possible non-Abelian fractional quantum hall effect state.

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Wei; Crawford, Matthew; Tallakulam, Madhu; Ross, Anthony Joseph, III

    2010-10-01

    We wish to present in this report experimental results from a one-year Senior Council Tier-1 LDRD project that focused on understanding the physics of a possible non-Abelian fractional quantum Hall effect state. We first give a general introduction to the quantum Hall effect, and then present the experimental results on the edge-state transport in a special fractional quantum Hall effect state at Landau level filling {nu} = 5/2 - a possible non-Abelian quantum Hall state. This state has been at the center of current basic research due to its potential applications in fault-resistant topological quantum computation. We will also describe the semiconductor 'Hall-bar' devices we used in this project. Electron physics in low dimensional systems has been one of the most exciting fields in condensed matter physics for many years. This is especially true of quantum Hall effect (QHE) physics, which has seen its intellectual wealth applied in and has influenced many seemingly unrelated fields, such as the black hole physics, where a fractional QHE-like phase has been identified. Two Nobel prizes have been awarded for discoveries of quantum Hall effects: in 1985 to von Klitzing for the discovery of integer QHE, and in 1998 to Tsui, Stormer, and Laughlin for the discovery of fractional QHE. Today, QH physics remains one of the most vibrant research fields, and many unexpected novel quantum states continue to be discovered and to surprise us, such as utilizing an exotic, non-Abelian FQHE state at {nu} = 5/2 for fault resistant topological computation. Below we give a briefly introduction of the quantum Hall physics.

  13. Probing the thermal Hall effect using miniature capacitive strontium titanate thermometry

    Energy Technology Data Exchange (ETDEWEB)

    Tinsman, Colin; Li, Gang; Asaba, Tomoya; Lawson, Benjamin; Yu, Fan; Li, Lu [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States); Su, Caroline [Department of Physics, University of California, Berkeley, California 94720 (United States)

    2016-06-27

    The thermal Hall effect is the thermal analog of the electrical Hall effect. Rarely observed in normal metals, thermal Hall signals have been argued to be a key property for a number of strongly correlated materials, such as high temperature superconductors, correlated topological insulators, and quantum magnets. The observation of the thermal Hall effect requires precise measurement of temperature in intense magnetic fields. Particularly at low temperature, resistive thermometers have a strong dependence on field, which makes them unsuitable for this purpose. We have created capacitive thermometers which instead measure the dielectric constant of strontium titanate (SrTiO{sub 3}). SrTiO{sub 3} approaches a ferroelectric transition, causing its dielectric constant to increase by a few orders of magnitude at low temperature. As a result, these thermometers are very sensitive at low temperature while having very little dependence on the applied magnetic field, making them ideal for thermal Hall measurements. We demonstrate this method by making measurements of the thermal Hall effect in Bismuth in magnetic fields of up to 10 T.

  14. Influence of confined optical phonons and laser radiation on the hall effect in a compositional superlattice

    Science.gov (United States)

    Bau, Nguyen Quang; Long, Do Tuan

    2018-03-01

    The effect of confined optical phonons and laser radiation are taken into account to study the Hall effect in a compositional semiconductor superlattice (CSSL). The new theoretical expressions of the Hall conductivity, the Hall coefficient and the magnetoresistance are obtained as functions of the external fields (the magnetic field B, the laser frequency Ω and amplitude E), the CSSL parameters (the well length dI, the barrier length dII and height U) and the quantum number m characterizing the phonon confinement effect. The magneto-confined phonon resonance condition in a CSSL is also carried out to explain the numerical evaluation results for the GaAs /AlxGa1-x As CSSL. When optical phonons are confined, the Hall conductivity has more resonance peaks in comparison with that for bulk phonons. In addition, these sub-peaks are more separate from the main peaks as the CSSL layers thickness decreases. The tighter CSSL period is, the more forcefully the phonon confinement makes. When the CSSL period d is smaller than 30 nm , the contribution of confined optical phonons is significant and could not be neglected. The magnetophonon resonance for bulk semiconductor could be achieved in the limit the CSSL period goes to infinity. Furthermore, the Hall conductivity increases and the Hall coefficient, the magnetoresistance decrease due to the laser radiation and the effect of confined optical phonons. Especially, the near-linear dependence of the magnetoresistance on temperature is in good agreement with the experimental result.

  15. A review of the quantum Hall effects in MgZnO/ZnO heterostructures

    Science.gov (United States)

    Falson, Joseph; Kawasaki, Masashi

    2018-05-01

    This review visits recent experimental efforts on high mobility two-dimensional electron systems (2DES) hosted at the Mg x Zn1-x O/ZnO heterointerface. We begin with the growth of these samples, and highlight the key characteristics of ozone-assisted molecular beam epitaxy required for their production. The transport characteristics of these structures are found to rival that of traditional semiconductor material systems, as signified by the high electron mobility (μ > 1000 000 cm2 Vs‑1) and rich quantum Hall features. Owing to a large effective mass and small dielectric constant, interaction effects are an order of magnitude stronger in comparison with the well studied GaAs-based 2DES. The strong correlation physics results in robust Fermi-liquid renormalization of the effective mass and spin susceptibility of carriers, which in turn dictates the parameter space for the quantum Hall effect. Finally, we explore the quantum Hall effect with a particular emphasis on the spin degree of freedom of carriers, and how their large spin splitting allows control of the ground states encountered at ultra-low temperatures within the fractional quantum Hall regime. We discuss in detail the physics of even-denominator fractional quantum Hall states, whose observation and underlying character remain elusive and exotic.

  16. A review of the quantum Hall effects in MgZnO/ZnO heterostructures.

    Science.gov (United States)

    Falson, Joseph; Kawasaki, Masashi

    2018-01-22

    This review visits recent experimental efforts on high mobility two-dimensional electron systems (2DES) hosted at the MgxZn1-xO/ZnO heterointerface. We begin with the growth of these samples, and highlight the key characteristics of ozone-assisted molecular beam epitaxy required for their production. The transport characteristics of these structures are found to rival that of traditional semiconductor material systems, as signified by the high electron mobility (μ > 1,000,000 cm2/Vs) and rich quantum Hall features. Owing to a large effective mass and small dielectric constant, interaction effects are an order of magnitude stronger in comparison with the well studied GaAs-based 2DES. The strong correlation physics results in robust Fermi-liquid renormalization of the effective mass and g-factor of carriers, which in turn dictates the parameter space for the quantum Hall effect. Finally, we explore the quantum Hall effect with a particular emphasis on the spin degree of freedom of carriers, and how their large spin splitting allows control of the ground states encountered at ultra-low temperatures within the fractional quantum Hall regime. A particular emphasis is put on the physics of even-denominator fractional quantum Hall states, whose observation and underlying character remain elusive and exotic. © 2018 IOP Publishing Ltd.

  17. Can Hall effect trigger Kelvin-Helmholtz instability in sub-Alfvénic flows?

    Science.gov (United States)

    Pandey, B. P.

    2018-05-01

    In the Hall magnetohydrodynamics, the onset condition of the Kelvin-Helmholtz instability is solely determined by the Hall effect and is independent of the nature of shear flows. In addition, the physical mechanism behind the super- and sub-Alfvénic flows becoming unstable is quite different: the high-frequency right circularly polarized whistler becomes unstable in the super-Alfvénic flows whereas low-frequency, left circularly polarized ion-cyclotron wave becomes unstable in the presence of sub-Alfvénic shear flows. The growth rate of the Kelvin-Helmholtz instability in the super-Alfvénic case is higher than the corresponding ideal magnetohydrodynamic rate. In the sub-Alfvénic case, the Hall effect opens up a new, hitherto inaccessible (to the magnetohydrodynamics) channel through which the partially or fully ionized fluid can become Kelvin-Helmholtz unstable. The instability growth rate in this case is smaller than the super-Alfvénic case owing to the smaller free shear energy content of the flow. When the Hall term is somewhat smaller than the advection term in the induction equation, the Hall effect is also responsible for the appearance of a new overstable mode whose growth rate is smaller than the purely growing Kelvin-Helmholtz mode. On the other hand, when the Hall diffusion dominates the advection term, the growth rate of the instability depends only on the Alfvén -Mach number and is independent of the Hall diffusion coefficient. Further, the growth rate in this case linearly increases with the Alfvén frequency with smaller slope for sub-Alfvénic flows.

  18. Spatially resolved Hall effect measurement in a single semiconductor nanowire

    Science.gov (United States)

    Storm, Kristian; Halvardsson, Filip; Heurlin, Magnus; Lindgren, David; Gustafsson, Anders; Wu, Phillip M.; Monemar, Bo; Samuelson, Lars

    2012-12-01

    Efficient light-emitting diodes and photovoltaic energy-harvesting devices are expected to play an important role in the continued efforts towards sustainable global power consumption. Semiconductor nanowires are promising candidates as the active components of both light-emitting diodes and photovoltaic cells, primarily due to the added freedom in device design offered by the nanowire geometry. However, for nanowire-based components to move past the proof-of-concept stage and be implemented in production-grade devices, it is necessary to precisely quantify and control fundamental material properties such as doping and carrier mobility. Unfortunately, the nanoscale geometry that makes nanowires interesting for applications also makes them inherently difficult to characterize. Here, we report a method to carry out Hall measurements on single core-shell nanowires. Our technique allows spatially resolved and quantitative determination of the carrier concentration and mobility of the nanowire shell. As Hall measurements have previously been completely unavailable for nanowires, the experimental platform presented here should facilitate the implementation of nanowires in advanced practical devices.

  19. Effective-field-theory model for the fractional quantum Hall effect

    Science.gov (United States)

    Zhang, S. C.; Hansson, T. H.; Kivelson, S.

    1989-01-01

    Starting directly from the microscopic Hamiltonian, a field-theory model is derived for the fractional quantum Hall effect. By considering an approximate coarse-grained version of the same model, a Landau-Ginzburg theory similar to that of Girvin (1986) is constructed. The partition function of the model exhibits cusps as a function of density. It is shown that the collective density fluctuations are massive.

  20. Analytical theory and possible detection of the ac quantum spin Hall effect.

    Science.gov (United States)

    Deng, W Y; Ren, Y J; Lin, Z X; Shen, R; Sheng, L; Sheng, D N; Xing, D Y

    2017-07-11

    We develop an analytical theory of the low-frequency ac quantum spin Hall (QSH) effect based upon the scattering matrix formalism. It is shown that the ac QSH effect can be interpreted as a bulk quantum pumping effect. When the electron spin is conserved, the integer-quantized ac spin Hall conductivity can be linked to the winding numbers of the reflection matrices in the electrodes, which also equal to the bulk spin Chern numbers of the QSH material. Furthermore, a possible experimental scheme by using ferromagnetic metals as electrodes is proposed to detect the topological ac spin current by electrical means.

  1. Parity effect of bipolar quantum Hall edge transport around graphene antidots.

    Science.gov (United States)

    Matsuo, Sadashige; Nakaharai, Shu; Komatsu, Katsuyoshi; Tsukagoshi, Kazuhito; Moriyama, Takahiro; Ono, Teruo; Kobayashi, Kensuke

    2015-06-30

    Parity effect, which means that even-odd property of an integer physical parameter results in an essential difference, ubiquitously appears and enables us to grasp its physical essence as the microscopic mechanism is less significant in coarse graining. Here we report a new parity effect of quantum Hall edge transport in graphene antidot devices with pn junctions (PNJs). We found and experimentally verified that the bipolar quantum Hall edge transport is drastically affected by the parity of the number of PNJs. This parity effect is universal in bipolar quantum Hall edge transport of not only graphene but also massless Dirac electron systems. These results offer a promising way to design electron interferometers in graphene.

  2. The effect of anomalous utterances on language production

    OpenAIRE

    Ivanova, I; Wardlow, L; Warker, J; Ferreira, VS

    2017-01-01

    Speakers sometimes encounter utterances that have anomalous linguistic features. Are such features registered during comprehension and transferred to speakers' production systems? In two experiments, we explored these questions. In a syntactic-priming paradigm, speakers heard prime sentences with novel or intransitive verbs as part of prepositional-dative or double-object structures (e.g., The chef munded the cup to the burglar or The doctor existed the pirate the balloon). Speakers then desc...

  3. Sixteen-state magnetic memory based on the extraordinary Hall effect

    International Nuclear Information System (INIS)

    Segal, A.; Karpovski, M.; Gerber, A.

    2012-01-01

    We report on a proof-of-concept study of split-cell magnetic storage in which multi-bit magnetic memory cells are composed of several multilevel ferromagnetic dots with perpendicular magnetic anisotropy. Extraordinary Hall effect is used for reading the data. Feasibility of the approach is supported by realization of four-, eight- and sixteen- state cells. - Highlights: ► We propose a novel structure of multi-bit magnetic random access memory. ► Each cell contains several interconnected storage dots. ► Extraordinary Hall effect is used for reading the data. ► Four-, eight- and sixteen-state cells have been realized.

  4. A novel approach for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of gallium and mercury metals

    International Nuclear Information System (INIS)

    Ogita, M.; Nakao, M.; Singh, C.D.; Mogi, I.; Awaji, S.

    2004-01-01

    An AC-DC method has been proposed for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of Ga and Hg metals. In low magnetic field Hall signal in solid state is proportional to magnetic field B, while in liquid state Hall signal is affected by magnetoresistance effect. It has been found that magnetoresistance has a B 2 dependence on magnetic field and affects the Hall signal. In high magnetic field, the Hall effect in liquid state is affected by a very large magnetoresistance effect compared in solid state. The magnetoresistance effect in liquid state is higher than solid state

  5. A novel method of including Landau level mixing in numerical studies of the quantum Hall effect

    International Nuclear Information System (INIS)

    Wooten, Rachel; Quinn, John; Macek, Joseph

    2013-01-01

    Landau level mixing should influence the quantum Hall effect for all except the strongest applied magnetic fields. We propose a simple method for examining the effects of Landau level mixing by incorporating multiple Landau levels into the Haldane pseudopotentials through exact numerical diagonalization. Some of the resulting pseudopotentials for the lowest and first excited Landau levels will be presented

  6. Electron Paramagnetic Resonance Spectroscopy and Hall Effect Studies of the Effects of Low Energy Electron Irradiation on Gallium Nitride

    National Research Council Canada - National Science Library

    Greene, Kevin

    2003-01-01

    ... for 1.0 MeV electron irradiation have been ascertained by the concerted application of electron paramagnetic resonance spectroscopy and Hall effect measurements to virgin and electron-irradiated GaN epilayers...

  7. Carrier coherence and high-resolution Hall effect measurements in organic semiconductors.

    Science.gov (United States)

    Podzorov, Vitaly

    Charge conduction in organic semiconductors frequently occurs in a regime at the borderline between a band-like coherent motion of delocalazied carriers in extended states and an incoherent hopping through localized states. Many intrinsic factors are competing for defining the dominant transport mechanism, including the strength of intermolecular interactions represented by the transfer integrals, carrier self-localization due to formation of polarons, electron-phonon coupling, scattering and off-diagonal thermal disorder (see, e.g.,). Depending on the interplay between these processes, either band-like or hopping charge transport realizes. Besides these intrinsic factors, a significant role in practical devices is played by the static disorder (chemical impurities and structural defects) that leads to carrier trapping at various energies and time scales. In most of these cases, the charge carrier mobility in OFETs is rather small (0.1 - 20 cm2V-1s-1)),and in order to carefully and accurately characterize it,Hall effect measurements are necessary. Conventional Hall measurements are extremely challenging in systems with such low mobilities. Here,we present a novel Hall measurement technique that can be carried out in low magnetic fields with an amazing sensitivity,much greater than that attained in conventional Hall measurements. We apply this method to mobility measurements in a variety of OFETs with mobility as low as 0.3 cm2V-1s-1 and reveal various peculiarities of Hall effect in low-mobility systems. By taking advantage of this powerful new experimental capability, we have understood several ``mysteries'' of Hall effect observed by various groups in OFETs over the last decade. The work was financially supported by NSF DMR-1506609, and Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST «MISiS» (No. K3-2016-004), decree dated 16th of March 2013, N 211.

  8. Hall effect driven by non-collinear magnetic polarons in diluted magnetic semiconductors

    Science.gov (United States)

    Denisov, K. S.; Averkiev, N. S.

    2018-04-01

    In this letter, we develop the theory of Hall effect driven by non-collinear magnetic textures (topological Hall effect—THE) in diluted magnetic semiconductors (DMSs). We show that a carrier spin-orbit interaction induces a chiral magnetic ordering inside a bound magnetic polaron (BMP). The inner structure of non-collinear BMP is controlled by the type of spin-orbit coupling, allowing us to create skyrmion- (Rashba) or antiskyrmion-like (Dresselhaus) configurations. The asymmetric scattering of itinerant carriers on polarons leads to the Hall response which exists in weak external magnetic fields and at low temperatures. We point out that DMS-based systems allow one to investigate experimentally the dependence of THE both on a carrier spin polarization and on a non-collinear magnetic texture shape.

  9. Giant Planar Hall Effect in the Dirac Semimetal ZrTe5

    KAUST Repository

    Li, Peng

    2018-03-03

    Exploration and understanding of exotic topics in quantum physics such as Dirac and Weyl semimetals have become highly popular in the area of condensed matter. It has recently been predicted that a theoretical giant planar Hall effect can be induced by a chiral anomaly in Dirac and Weyl semimetals. ZrTe5 is considered an intriguing Dirac semimetal at the boundary of weak and strong topological insulators, though this claim is still controversial. In this study, we report the observation in ZrTe5 of giant planar Hall resistivity. We have also noted three different dependences of this resistivity on the magnetic field, as predicted by theory, maximum planar Hall resistivity occurs at the Lifshitz transition temperature. In addition, we have discovered a nontrivial Berry phase, as well as a chiral-anomaly-induced negative longitudinal and a giant in-plane anisotropic magnetoresistance. All these experimental observations coherently demonstrate that ZrTe5 is a Dirac semimetal.

  10. Spin-torque switching of a nano-magnet using giant spin hall effect

    Directory of Open Access Journals (Sweden)

    Ashish V. Penumatcha

    2015-10-01

    Full Text Available The Giant Spin Hall Effect(GSHE in metals with high spin-orbit coupling is an efficient way to convert charge currents to spin currents, making it well-suited for writing information into magnets in non-volatile magnetic memory as well as spin-logic devices. We demonstrate the switching of an in-plane CoFeB magnet using a combination of GSHE and an external magnetic field. The magnetic field dependence of the critical current is used to estimate the spin hall angle with the help of a thermal activation model for spin-transfer torque switching of a nanomagnet.

  11. Pressure dependence of the Hall effect in single crystals of CeNiSn

    International Nuclear Information System (INIS)

    Hiraoka, T.; Kinoshita, E.; Takabatake, T.; Tanaka, H.; Fujii, H.

    1994-01-01

    The pressure dependence of the Hall effect in single crystals of CeNiSn (J parallel b, H parallel a; J parallel a, H parallel b; J parallel b, H parallel c) has been measured. The Hall coefficient R H decreases with pressure in the low-temperature range, indicating a decrease of gap energy under pressure due to the decrease of slope in the log ρ versus 1/T dependence. A crossover temperature is observed in the slope of this dependence. ((orig.))

  12. Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper

    Science.gov (United States)

    Yamanouchi, Michihiko; Chen, Lin; Kim, Junyeon; Hayashi, Masamitsu; Sato, Hideo; Fukami, Shunsuke; Ikeda, Shoji; Matsukura, Fumihiro; Ohno, Hideo

    2013-05-01

    We show a three terminal magnetic tunnel junction (MTJ) with a 10-nm thick channel based on an interconnection material Cu with 10% Ir doping. By applying a current density of less than 1012 A m-2 to the channel, depending on the current direction, switching of a MTJ defined on the channel takes place. We show that spin transfer torque (STT) plays a critical role in determining the threshold current. By assuming the spin Hall effect in the channel being the source of the STT, the lower bound of magnitude of the spin Hall angle is evaluated to be 0.03.

  13. Magnetoresistance, electrical conductivity, and Hall effect of glassy carbon

    Energy Technology Data Exchange (ETDEWEB)

    Baker, D.F.

    1983-02-01

    These properties of glassy carbon heat treated for three hours between 1200 and 2700/sup 0/C were measured from 3 to 300/sup 0/K in magnetic fields up to 5 tesla. The magnetoresistance was generally negative and saturated with reciprocal temperature, but still increased as a function of magnetic field. The maximum negative magnetoresistance measured was 2.2% for 2700/sup 0/C material. Several models based on the negative magnetoresistance being proportional to the square of the magnetic moment were attempted; the best fit was obtained for the simplest model combining Curie and Pauli paramagnetism for heat treatments above 1600/sup 0/C. Positive magnetoresistance was found only in less than 1600/sup 0/C treated glassy carbon. The electrical conductivity, of the order of 200 (ohm-cm)/sup -1/ at room temperature, can be empirically written as sigma = A + Bexp(-CT/sup -1/4) - DT/sup -1/2. The Hall coefficient was independent of magnetic field, insensitive to temperature, but was a strong function of heat treatment temperature, crossing over from negative to positive at about 1700/sup 0/C and ranging from -0.048 to 0.126 cm/sup 3//coul. The idea of one-dimensional filaments in glassy carbon suggested by the electrical conductivity is compatible with the present consensus view of the microstructure.

  14. Spin precession and spin Hall effect in monolayer graphene/Pt nanostructures

    Science.gov (United States)

    Savero Torres, W.; Sierra, J. F.; Benítez, L. A.; Bonell, F.; Costache, M. V.; Valenzuela, S. O.

    2017-12-01

    Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we demonstrate a two-order of magnitude enhancement of the signal in monolayer graphene/Pt devices when compared to their fully metallic counterparts. The enhancement stems in part from efficient spin injection and the large spin resistance of graphene but we also observe 100% spin absorption in Pt and find an unusually large effective spin Hall angle of up to 0.15. The large spin-to-charge conversion allows us to characterise spin precession in graphene under the presence of a magnetic field. Furthermore, by developing an analytical model based on the 1D diffusive spin-transport, we demonstrate that the effective spin-relaxation time in graphene can be accurately determined using the (inverse) spin Hall effect as a means of detection. This is a necessary step to gather full understanding of the consequences of spin absorption in spin Hall devices, which is known to suppress effective spin lifetimes in both metallic and graphene systems.

  15. Effects of Hall current and electrical resistivity on the stability of gravitating anisotropic quantum plasma

    Science.gov (United States)

    Bhakta, S.; Prajapati, R. P.

    2018-02-01

    The effects of Hall current and finite electrical resistivity are studied on the stability of uniformly rotating and self-gravitating anisotropic quantum plasma. The generalized Ohm's law modified by Hall current and electrical resistivity is used along with the quantum magnetohydrodynamic fluid equations. The general dispersion relation is derived using normal mode analysis and discussed in the parallel and perpendicular propagations. In the parallel propagation, the Jeans instability criterion, expression of critical Jeans wavenumber, and Jeans length are found to be independent of non-ideal effects and uniform rotation but in perpendicular propagation only rotation affects the Jeans instability criterion. The unstable gravitating mode modified by Bohm potential and the stable Alfven mode modified by non-ideal effects are obtained separately. The criterion of firehose instability remains unaffected due to the presence of non-ideal effects. In the perpendicular propagation, finite electrical resistivity and quantum pressure anisotropy modify the dispersion relation, whereas no effect of Hall current was observed in the dispersion characteristics. The Hall current, finite electrical resistivity, rotation, and quantum corrections stabilize the growth rate. The stability of the dynamical system is analyzed using the Routh-Hurwitz criterion.

  16. Minimal model of spin-transfer torque and spin pumping caused by the spin Hall Effect

    Czech Academy of Sciences Publication Activity Database

    Chen, W.; Sigrist, M.; Sinova, Jairo; Manske, D.

    2016-01-01

    Roč. 115, č. 21 (2016), 1-5, č. článku 217203. ISSN 0031-9007 Institutional support: RVO:68378271 Keywords : spin tronics * spin Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 8.462, year: 2016

  17. Edge modes in the fractional quantum Hall effect without extra edge fermions

    Science.gov (United States)

    Lima, G. L. S.; Dias, S. A.

    2011-05-01

    We show that the Chern-Simons-Landau-Ginsburg theory that describes the quantum Hall effect on a bounded sample is anomaly free and thus does not require the addition of extra chiral fermions on the boundary to restore local gauge invariance.

  18. Hall effects on hydromagnetic Couette flow of Class-II in a rotating ...

    African Journals Online (AJOL)

    Hall effects on steady hydromagnetic Couette flow of class-II of a viscous, incompressible and electrically conducting fluid with non-conducting walls in a rotating system in the presence of an inclined magnetic field is investigated. Exact solution of the governing equations is obtained in closed form. Expressions for the shear ...

  19. Investigation of ferromagnetic microstructures by local Hall effect and magnetic force microscopy

    NARCIS (Netherlands)

    Nitta, J; Schapers, T; Heersche, HB; Koga, T; Sato, Y; Takayanagi, H

    We have investigated the magnetization process of NiFe micro-magnets, using fringing field induced local Hall effect (LHE) and magnetic force microscopy (MFM), Although the LHE reflects information only from the edge of micro-magnets, the MFM observation supports the conclusion that a rapid jump in

  20. Planar Hall effect sensor bridge geometries optimized for magnetic bead detection

    DEFF Research Database (Denmark)

    Østerberg, Frederik Westergaard; Rizzi, Giovanni; Henriksen, Anders Dahl

    2014-01-01

    Novel designs of planar Hall effect bridge sensors optimized for magnetic bead detection are presented and characterized. By constructing the sensor geometries appropriately, the sensors can be tailored to be sensitive to an external magnetic field, the magnetic field due to beads being magnetized...

  1. Weak-field Hall effect and static polarizability of Bloch electrons

    Czech Academy of Sciences Publication Activity Database

    Středa, Pavel; Jonckheere, T.

    2009-01-01

    Roč. 79, č. 11 (2009), 115115/1-115115/8 ISSN 1098-0121 R&D Projects: GA ČR GA202/08/0551 Institutional research plan: CEZ:AV0Z10100521 Keywords : Hall effect * magnetization * Bloch electrons electron polarizability * electron polarizability Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009

  2. Temperature effects in exchange-biased planar Hall sensors for bioapplications

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad; Dalslet, Bjarke Thomas; Freitas, S.C.

    2009-01-01

    The temperature dependence of exchange biased planar Hall effect sensors is investigated between T = −10 and 70 °C. It is shown that a single domain model describes the system well and that the temperature coefficient of the low-field sensitivity at T = 25 °C is 0.32%/°C. A procedure for temperat...

  3. High precision micro-scale Hall Effect characterization method using in-line micro four-point probes

    DEFF Research Database (Denmark)

    Petersen, Dirch Hjorth; Hansen, Ole; Lin, Rong

    2008-01-01

    effect is measured with collinear micro four-point probes (M4PP). We derive the sensitivity to electrode position errors and describe a position error suppression method to enable rapid reliable Hall effect measurements with just two measurement points. We show with both Monte Carlo simulations......Accurate characterization of ultra shallow junctions (USJ) is important in order to understand the principles of junction formation and to develop the appropriate implant and annealing technologies. We investigate the capabilities of a new micro-scale Hall effect measurement method where Hall...... and experimental measurements, that the repeatability of a micro-scale Hall effect measurement is better than 1 %. We demonstrate the ability to spatially resolve Hall effect on micro-scale by characterization of an USJ with a single laser stripe anneal. The micro sheet resistance variations resulting from...

  4. Size-dependent effects in exchange-biased planar Hall effect sensor crosses

    DEFF Research Database (Denmark)

    Donolato, Marco; Dalslet, Bjarke Thomas; Damsgaard, Christian Danvad

    2011-01-01

    Exchange-biased planar Hall effect magnetic field sensor crosses with arm width w have been studied as function of w. For large values of w, the magnetic behavior is hysteresis-free and follows the single domain Stoner-Wohlfarth model. When w is decreased, hysteresis is observed in the sensor...... by an increasing magnetic shape anisotropy of the arms of the cross. We propose a simple analytical model that captures the essential physics of the observations and parameterizes the effects of the cross-shape on the central part of the cross. (C) 2011 American Institute of Physics. [doi:10.1063/1.3561364]...

  5. Specific heat and Hall effect of the ferromagnetic Kondo lattice UCu0.9Sb2.

    Science.gov (United States)

    Tran, V H; Bukowski, Z

    2017-06-01

    We have investigated the electrical resistivity ρ, specific heat C p and Hall coefficient R H on a single crystal of a ferromagnetic Kondo lattice UCu 0.9 Sb 2 . The experimental [Formula: see text], C p (T) and [Formula: see text] data evidence a bulk magnetic phase transition at [Formula: see text] K, and additionally exhibit an unexpected bump located in the temperature range T C /10-T C /3. UCu 0.9 Sb 2 has an enhanced electronic specific heat coefficient [Formula: see text] mJ molK -2 , corresponding to Kondo temperature [Formula: see text] K. An analysis of the Hall effect data for j//(a, b)-plane and H// c-axis reveals that the low-temperature ordinary Hall coefficient R 0 is positive, suggesting that p-type electrical conductivity is dominant. The density of the carriers at 2 K is about 0.6 holes f.u. -1 , which may categorize the studied compound into class of low carrier density compounds. Combined γ and R 0 data divulge an effective mass of charge carriers [Formula: see text] 27 m e . This finding together with quite low Hall mobility [Formula: see text] cm 2 Vs -1 and Kadowaki-Woods ratio [Formula: see text] [Formula: see text] cm (mol K 2 mJ -1 ) 2 , manifest the development of heavy-fermion state in the ferromagnetic UCu 0.9 Sb 2 compound at low temperatures.

  6. Study of the Hall effect in gallium and indium arsenides in solid and liquid phases

    International Nuclear Information System (INIS)

    Glazov, V.M.; Kol'tsov, V.B.; Sulejmanov, I.R.

    1985-01-01

    Hall effect in gallium and indium arsenides in solid and liquid state is investigated within the framework of a united experiment for the first time. As a result the Hall constant change in the course of these compounds melting is determined experimentally, and on the basis of data obtained and using well-known hopping electric conductivity values, changes of charge carrier density and mobility are estimated. The observed differences in the jumps of pointed characteristics in the course of melting of GaAs compounds on the one hand and InAs - on the other are explained by behaviour peculiarities of the latter in a solid phase dose to the melting temperature. Data on Hall effect in GaAs and InAs melts is abtaned for the first time. Thermal width values of forbidden zone of A 3 As compound calculated on the basis of Hall measurements, conform well with assessment results on the basis of data on electric conductivity

  7. Plasma pressure tensor effects on reconnection: Hybrid and Hall-magnetohydrodynamics simulations

    International Nuclear Information System (INIS)

    Yin Lin; Winske, Dan

    2003-01-01

    Collisionless reconnection is studied using two-dimensional (2-D) hybrid (particle ions, massless fluid electrons) and Hall-magnetohydrodynamics (Hall-MHD) simulations. Both use the full electron pressure tensor instead of a localized resistivity in Ohm's law to initiate reconnection; an initial perturbation or boundary driving to the equilibrium is used. The initial configurations include one-dimensional (1-D) and 2-D current sheets both with and without a guide field. Electron dynamics from the two calculations are compared, and overall agreement is found between the calculations in both reconnection rate and global configuration [L. Yin et al., J. Geophys. Res. 106, 10761 (2001)]. It is shown that the electron drifts in the small-transverse-scale fields near the X point cause the electron motion to decouple from the ion motion, and that reconnection occurs due to electron viscous effects contained in the off-diagonal terms of the electron pressure tensor. Comparing the hybrid and Hall-MHD simulations shows that effects of the off-diagonal terms in the ion pressure tensor, i.e., the ion gyro-radius effects, are necessary in order to model correctly the ion out-of-plane motion. It is shown that these effects can be modeled efficiently in a particle Hall-MHD simulation in which particle ions are used in a predictor/corrector manner to implement ion gyro-radius corrections [L. Yin et al., Phys. Plasmas 9, 2575 (2002)]. For modeling reconnection in large systems, a new integrated approach is examined in which Hall-MHD calculations using a full electron pressure tensor model is embedded inside a MHD simulation. The embedded simulation of current sheet thinning and reconnection dynamics in a realistic 2-D magnetotail equilibrium exhibits smooth transitions of plasma and field quantities between the two regions, with small-scale physics represented well in the compressed current sheet and in the near-X-point region

  8. Non-adiabatic effect on Laughlin's argument of the quantum Hall effect

    International Nuclear Information System (INIS)

    Maruyama, I; Hatsugai, Y

    2009-01-01

    We have numerically studied a non-adiabatic charge transport in the quantum Hall system pumped by a magnetic flux, as one of the simplest theoretical realizations of non-adiabatic Thouless pumping. In the adiabatic limit, a pumped charge is quantized, known as Laughlin's argument in a cylindrical lattice. In a uniform electric field, we obtained a formula connecting quantized pumping in the adiabatic limit and no-pumping in the sudden limit. The intermediate region between the two limits is determined by the Landau gap. A randomness or impurity effect is also discussed.

  9. Optical Orientation and Inverse Spin Hall Effect as Effective Tools to Investigate Spin-Dependent Diffusion

    Directory of Open Access Journals (Sweden)

    Marco Finazzi

    2016-11-01

    Full Text Available In this work we address optical orientation, a process consisting in the excitation of spin polarized electrons across the gap of a semiconductor. We show that the combination of optical orientation with spin-dependent scattering leading to the inverse spin-Hall effect, i.e., to the conversion of a spin current into an electrical signal, represents a powerful tool to generate and detect spin currents in solids. We consider a few examples where these two phenomena together allow addressing the spin-dependent transport properties across homogeneous samples or metal/semiconductor Schottky junctions.

  10. Rotating ferro-nanofluid over stretching plate under the effect of hall current and joule heating

    Energy Technology Data Exchange (ETDEWEB)

    Abdel-Wahed, Mohamed S., E-mail: eng_moh_sayed@live.com

    2017-05-01

    The behavior of boundary layer over a stretching plate filled with ferromagnetic Fe{sub 3}O{sub 4} nanoparticles and subjected to magnetic field with hall current, joule heating and nonlinear thermal radiation has been investigated. The modeling based on nonlinear partial differential equations due to continuity, momentum and heat equations, these equations transformed to a system of nonlinear ordinary differential equations using similarity transformation technique then solved numerically. The effect of hall current, joule heating and thermal radiation on the physical quantities such as surface shear stress and heat flux have been investigated and discussed. Moreover, the velocities and temperature profiles of the boundary layer under the influence of the presented external forces plotted and discussed. - Highlights: • The existence of the hall current increases the transverse velocity, as well as has a limited impact on the longitudinal velocity. • Boundary layer temperature exposed to nonlinear thermal radiation is higher than that exposed to linear thermal radiation. • Joule heating increases the boundary layer temperature near the surface especially in the linear model of thermal radiation. • Magnetic field with hall current increases the x-direction skin friction and reduces it in the y-direction.

  11. Reversed Hall effect and plasma conductivity in the presence of charged impurities

    Science.gov (United States)

    Yaroshenko, V. V.; Lühr, H.

    2018-01-01

    The Hall conductivity of magnetized plasma can be strongly suppressed by the contribution of negatively charged particulates (referred further as "dust"). Once the charge density accumulated by the dust exceeds a certain threshold, the Hall component becomes negative, providing a reversal in the Hall current. Such an effect is unique for dust-loaded plasmas, and it can hardly be achieved in electronegative plasmas. Further growth of the dust density leads to an increase in both the absolute value of the Hall and Pedersen conductivities, while the field-aligned component is decreased. These modifications enhance the role of transverse electric currents and reduce the anisotropy of a magnetized plasma when loaded with charged impurities. The findings provide an important basis for studying the generation of electric currents and transport phenomena in magnetized plasma systems containing small charged particulates. They can be relevant for a wide range of applications from naturally occurring space plasmas in planetary magnetospheres and astrophysical objects to laboratory dusty plasmas (Magnetized Dusty Plasma Experiment) and to technological and fusion plasmas.

  12. Enhanced spin Hall effect of light by transmission in a polymer

    DEFF Research Database (Denmark)

    Takayama, Osamu; Puentes, Graciana

    2018-01-01

    We demonstrate experimentally the lateral circular birefringence of a tunable birefringent polymer, the first example of the spin Hall effect of light in a polymeric material, and we demonstrate that this light shift can be significantly enhanced by tuning the effective birefringence in the polymer....... We report experimental observations of this effect using polarimetric techniques and quantum-weak-measurement techniques, reporting a weak amplification factor of 200...

  13. Hall effect mobility for SiC MOSFETs with increasing dose of nitrogen implantation into channel region

    Science.gov (United States)

    Noguchi, Munetaka; Iwamatsu, Toshiaki; Amishiro, Hiroyuki; Watanabe, Hiroshi; Kita, Koji; Yamakawa, Satoshi

    2018-04-01

    The Hall effect mobility (μHall) of the Si-face 4H-SiC metal–oxide–semiconductor field effect transistor (MOSFET) with a nitrogen (N)-implanted channel region was investigated by increasing the N dose. The μHall in the channel region was systematically examined regarding channel structures, that is, the surface and buried channels. It was experimentally demonstrated that increasing the N dose results in an improvement in μHall in the channel region due to the formation of the buried channel. However, further increase in N dose was found to decrease the μHall in the channel region, owing to the decrease in the electron mobility in the N-implanted bulk region.

  14. Spin Hall effects in metallic antiferromagnets – perspectives for future spin-orbitronics

    Directory of Open Access Journals (Sweden)

    Joseph Sklenar

    2016-05-01

    Full Text Available We investigate angular dependent spin-orbit torques from the spin Hall effect in a metallic antiferromagnet using the spin-torque ferromagnetic resonance technique. The large spin Hall effect exists in PtMn, a prototypical CuAu-I-type metallic antiferromagnet. By applying epitaxial growth, we previously reported an appreciable difference in spin-orbit torques for c- and a-axis orientated samples, implying anisotropic effects in magnetically ordered materials. In this work we demonstrate through bipolar-magnetic-field experiments a small but noticeable asymmetric behavior in the spin-transfer-torque that appears as a hysteresis effect. We also suggest that metallic antiferromagnets may be good candidates for the investigation of various unidirectional effects related to novel spin-orbitronics phenomena.

  15. Effects of macroscopic inhomogeneities on resistive and Hall measurements on crosses, cloverleafs, and bars

    Science.gov (United States)

    Koon, D. W.; Knickerbocker, C. J.

    1996-12-01

    The effect of macroscopic inhomogeneities on resistivity and Hall angle measurements is studied by calculating weighting functions (the relative effect of perturbations in a local transport property on the measured global average for the object) for cross, cloverleaf, and bar-shaped geometries. The ``sweet spot,'' the region in the center of the object that the measurement effectively samples, is smaller for crosses and cloverleafs than for the circles and squares already studied, and smaller for the cloverleaf than for the corresponding cross. Resistivity measurements for crosses and cloverleafs suffer from singularities and negative weighting, which can be eliminated by averaging two independent resistance measurements, as done in the van der Pauw technique. Resistivity and Hall measurements made on sufficiently narrow bars are shown to effectively sample only the region directly between the voltage probes.

  16. Jain states in a matrix theory of the quantum Hall effect

    International Nuclear Information System (INIS)

    Cappelli, Andrea; Rodriguez, Ivan D.

    2006-01-01

    The U(N) Maxwell-Chern-Simons matrix gauge theory is proposed as an extension of Susskind's noncommutative approach. The theory describes D0-branes, nonrelativistic particles with matrix coordinates and gauge symmetry, that realize a matrix generalization of the quantum Hall effect. Matrix ground states obtained by suitable projections of higher Landau levels are found to be in one-to-one correspondence with the expected Laughlin and Jain hierarchical states. The Jain composite-fermion construction follows by gauge invariance via the Gauss law constraint. In the limit of commuting, 'normal' matrices the theory reduces to eigenvalue coordinates that describe realistic electrons with Calogero interaction. The Maxwell-Chern-Simons matrix theory improves earlier noncommutative approaches and could provide another effective theory of the fractional Hall effect

  17. HALL CURRENT EFFECTS ON FREE CONVECTION MHD FLOW PAST A POROUS PLATE

    Directory of Open Access Journals (Sweden)

    G. Ramireddy

    2011-06-01

    Full Text Available Heat and mass transfer along a vertical porous plate under the combined buoyancy force effects of thermal and species diffusion is investigated in the presence of a transversely applied uniform magnetic field and the Hall currents are taken into account. The governing fundamental equations on the assumption of a small magnetic Reynolds number are approximated by a system of non-linear ordinary differential equations, which are integrated by fourth-order Runge–Kutta method. Velocity, temperature and concentration are shown on graphs. The numerical values of the local shear stress, the local Nusselt number Nu and the local Sherwood number Sh are entered in tables. The effects of the magnetic parameter, Hall parameter and the relative buoyancy force effect between species and thermal diffusion on the velocity, temperature and concentration are discussed. The results are compared with those known from the literature.

  18. Quantum spin Hall phases

    International Nuclear Information System (INIS)

    Murakami, Shuichi

    2009-01-01

    We review our recent theoretical works on the quantum spin Hall effect. First we compare edge states in various 2D systems, and see whether they are robust or fragile against perturbations. Through the comparisons we see the robust nature of edge states in 2D quantum spin Hall phases. We see how it is protected by the Z 2 topological number, and reveal the nature of the Z 2 topological number by studying the phase transition between the quantum spin Hall and insulator phases. We also review our theoretical proposal of the ultrathin bismuth film as a candidate to the 2D quantum spin Hall system. (author)

  19. Spectral Analysis of Non-ideal MRI Modes: The Effect of Hall Diffusion

    Energy Technology Data Exchange (ETDEWEB)

    Mohandas, Gopakumar; Pessah, Martin E., E-mail: gopakumar@nbi.ku.dk, E-mail: mpessah@nbi.ku.dk [Niels Bohr International Academy, Niels Bohr Institute, Blegdamsvej 17, DK-2100, Copenhagen Ø (Denmark)

    2017-03-20

    The effect of magnetic field diffusion on the stability of accretion disks is a problem that has attracted considerable interest of late. In particular, the Hall effect has the potential to bring about remarkable changes in the dynamical behavior of disks that are without parallel. In this paper, we conduct a systematic examination of the linear eigenmodes in a weakly magnetized differentially rotating gas with a special focus on Hall diffusion. We first develop a geometrical representation of the eigenmodes and provide a detailed quantitative description of the polarization properties of the oscillatory modes under the combined influence of the Coriolis and Hall effects. We also analyze the effects of magnetic diffusion on the structure of the unstable modes and derive analytical expressions for the kinetic and magnetic stresses and energy densities associated with the non-ideal magnetorotational instability (MRI). Our analysis explicitly demonstrates that, if the dissipative effects are relatively weak, the kinetic stresses and energies make up the dominant contribution to the total stress and energy density when the equilibrium angular momentum and magnetic field vectors are anti-parallel. This is in sharp contrast to what is observed in the case of the ideal or dissipative MRI. We conduct shearing box simulations and find very good agreement with the results derived from linear theory. Because the modes under consideration are also exact solutions of the nonlinear equations, the unconventional nature of the kinetic and magnetic stresses may have significant implications for the nonlinear evolution in some regions of protoplanetary disks.

  20. Modelling and design of planar Hall effect bridge sensors for low-frequency applications

    DEFF Research Database (Denmark)

    Persson, Åsa; Bejhed, R.S.; Østerberg, Frederik Westergaard

    2013-01-01

    and moderate noise figure. In this work, the applicability of such PHEB sensors to different areas is investigated. An analytical model is constructed to estimate the performance of an arbitrary PHEB sensor geometry in terms of, e.g., sensitivity and detectivity. The model is valid for an ideal case, e......The applicability of miniaturized magnetic field sensors is being explored in several areas of magnetic field detection due to their integratability, low mass, and potentially low cost. In this respect, different thin-film technologies, especially those employing magnetoresistance, show great...... potential, being compatible with batch micro- and nanofabrication techniques. For low-frequency magnetic field detection, sensors based on the planar Hall effect, especially planar Hall effect bridge (PHEB) sensors, show promising performance given their inherent low-field linearity, limited hysteresis...

  1. Valley Hall Conductivity in Graphene: Effects of Higher-Order Scattering

    Science.gov (United States)

    Ando, Tsuneya

    2018-04-01

    The valley Hall conductivity, having opposite signs between the K and K' valleys, is calculated in monolayer and bilayer graphenes with nonzero gap in the presence of short-range scatterers within a single-site approximation. In the case of small disorder, the Hall conductivity is quantized into ±e2/2h and ±e2/h in the monolayer and bilayer graphene, respectively, in the gap region, while it is enhanced over the results in the absence of scatterers in the band region. With the increase in the strength of each impurity potential, large asymmetry between the conduction and valence band appears. For scatterers with attractive potential, the disorder parameter is effectively enhanced and reduced in the conduction and valence band, respectively. The behavior is opposite for repulsive scatterers. Effects of skew scattering causing asymmetry in the scattering direction remain small and do not play significant role.

  2. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters

    Science.gov (United States)

    Reese, Bradley

    2015-01-01

    Arkansas Power Electronics International (APEI), Inc., is developing a high-efficiency, radiation-hardened 3.8-kW SiC power supply for the PPU of Hall effect thrusters. This project specifically targets the design of a PPU for the high-voltage Hall accelerator (HiVHAC) thruster, with target specifications of 80- to 160-V input, 200- to 700-V/5A output, efficiency greater than 96 percent, and peak power density in excess of 2.5 kW/kg. The PPU under development uses SiC junction field-effect transistor power switches, components that APEI, Inc., has irradiated under total ionizing dose conditions to greater than 3 MRad with little to no change in device performance.

  3. Role of La doping for topological Hall effect in epitaxial EuO films

    Science.gov (United States)

    Yun, Yu; Ma, Yang; Su, Tang; Xing, Wenyu; Chen, Yangyang; Yao, Yunyan; Cai, Ranran; Yuan, Wei; Han, Wei

    2018-03-01

    We report the critical role of La doping in the topological Hall effect observed in L axE u1 -xO thin films (˜50 nm ) grown by molecular beam epitaxy. When the La doping exceeds 0.036, topological Hall effect emerges, which we attribute to the formation of magnetic skyrmions. Besides, the La doping is found to play a critical role in determining the phases, densities, and sizes of the skyrmions in the L axE u1 -xO thin films. The maximum region of the skyrmion phase diagram is observed on the L a0.1E u0.9O thin film. As the La doping increases, the skyrmion density increases while the skyrmion size decreases. Our findings demonstrate the important role of La doping for the skyrmions in EuO films, which could be important for future studies of magnetic skyrmions in Heisenberg ferromagnets.

  4. Abelian Chern-Simons theory for the fractional quantum Hall effect in graphene

    Science.gov (United States)

    Fräßdorf, Christian

    2018-03-01

    We develop a theory for the pseudorelativistic fractional quantum Hall effect in graphene, which is based on a multicomponent Abelian Chern-Simons theory in the fermionic functional integral approach. Calculations are performed in the Keldysh formalism, directly giving access to real-time correlation functions at finite temperature. We obtain an exact effective action for the Chern-Simons gauge fields, which is expanded to second order in the gauge field fluctuations around the mean-field solution. The one-loop fermionic polarization tensor as well as the electromagnetic response tensor in random phase approximation are derived, from which we obtain the Hall conductivities for various FQH states, lying symmetrically around charge neutrality.

  5. Effects of changing the amount of absorption in a computer model of Queen's Hall, Copenhagen, Denmark

    DEFF Research Database (Denmark)

    Vigeant, Michelle C.; Wang, Lily M.; Rindel, Jens Holger

    2006-01-01

    of modelling the source directivity. A new method to incorporate source directivity is multi-channel auralizations. An omni-directional source is divided into the number of recording channels and the impulse response (IR) for each channel is calculated. Each individual IR is then convolved with the appropriate...... recording, and a final auralization is created by mixing all individual channel auralizations together. This study evaluates the objective and subjective effects of using four and thirteen channel IRs in an ODEON model of Queen’s Hall, a hall located in Copenhagen with variable absorption. Analyses...... of the results reveal great differences in the objective parameters of reverberation time (T30), clarity index (C50), sound pressure level (SPL) and lateral energy fraction (LF80) for each channel’s impulse response across the room absorption variations. Subjective studies were conducted to see the effect...

  6. Photoinduced quantum spin and valley Hall effects, and orbital magnetization in monolayer MoS2

    KAUST Repository

    Tahir, M.

    2014-09-22

    We theoretically demonstrate that 100% valley-polarized transport in monolayers of MoS2 and other group-VI dichalcogenides can be obtained using off-resonant circularly polarized light. By tuning the intensity of the off-resonant light the intrinsic band gap in one valley is reduced, while it is enhanced in the other valley, enabling single valley quantum transport. As a consequence, we predict (i) enhancement of the longitudinal electrical conductivity, accompanied by an increase in the spin polarization of the flowing electrons, (ii) enhancement of the intrinsic spin Hall effect, together with a reduction of the intrinsic valley Hall effect, and (iii) enhancement of the orbital magnetic moment and orbital magnetization. These mechanisms provide appealing opportunities to the design of nanoelectronics based on dichalcogenides.

  7. Experimental observation of the quantum Hall effect and Berry's phase in graphene.

    Science.gov (United States)

    Zhang, Yuanbo; Tan, Yan-Wen; Stormer, Horst L; Kim, Philip

    2005-11-10

    When electrons are confined in two-dimensional materials, quantum-mechanically enhanced transport phenomena such as the quantum Hall effect can be observed. Graphene, consisting of an isolated single atomic layer of graphite, is an ideal realization of such a two-dimensional system. However, its behaviour is expected to differ markedly from the well-studied case of quantum wells in conventional semiconductor interfaces. This difference arises from the unique electronic properties of graphene, which exhibits electron-hole degeneracy and vanishing carrier mass near the point of charge neutrality. Indeed, a distinctive half-integer quantum Hall effect has been predicted theoretically, as has the existence of a non-zero Berry's phase (a geometric quantum phase) of the electron wavefunction--a consequence of the exceptional topology of the graphene band structure. Recent advances in micromechanical extraction and fabrication techniques for graphite structures now permit such exotic two-dimensional electron systems to be probed experimentally. Here we report an experimental investigation of magneto-transport in a high-mobility single layer of graphene. Adjusting the chemical potential with the use of the electric field effect, we observe an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene. The relevance of Berry's phase to these experiments is confirmed by magneto-oscillations. In addition to their purely scientific interest, these unusual quantum transport phenomena may lead to new applications in carbon-based electronic and magneto-electronic devices.

  8. DC Transformer and DC Josephson(-like) Effects in Quantum Hall Bilayers

    OpenAIRE

    Girvin, S. M.

    2002-01-01

    In the early days of superconductivity, Ivar Giaver discovered that it was possible to make a novel DC transformer by using one superconductor to drag vortices through another. An analogous effect was predicted to exist in quantum Hall bilayers and has recently been discovered experimentally by Eisenstein's group at Caltech. Similarly, new experiments from the Caltech group have demonstrated the existence of a Josephson-like `supercurrent' branch for electrons coherently tunnelling between th...

  9. Electric control of spin-Hall effect by inter-valley transitions

    Czech Academy of Sciences Publication Activity Database

    Okamoto, N.; Kurebayashi, H.; Trypiniotis, T.; Farrer, I.; Ritchie, D. A.; Saitoh, E.; Sinova, Jairo; Mašek, Jan; Jungwirth, Tomáš; Barnes, C.H.W.

    2014-01-01

    Roč. 13, č. 10 (2014), s. 932-937 ISSN 1476-1122 R&D Projects: GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional support: RVO:68378271 Keywords : spin Hall effect * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 36.503, year: 2014

  10. Hall and heat transfer effects on the steady flow of a Sisko fluid

    Energy Technology Data Exchange (ETDEWEB)

    Hayat, Tasawar; Maqbool, Khadija [Dept. of Mathematics, Quaid-i-Azam Univ., Islamabad (Pakistan); Asghar, Saleem [Dept. of Mathematical Sciences, COMSATS, Inst. of Information Tech., Islamabad (Pakistan)

    2009-12-15

    This investigation is concerned with the flow and heat transfer analysis between two disks rotating about non-coaxial axes normal to the disks. The constitutive equation of an incompressible Sisko fluid is used. The fluid is electrically conducting and the Hall effect is taken into account. Analytic solutions of the governing nonlinear problem is obtained by homotopy analysis method (HAM). The graphs are presented and discussed. Finally a comparison is made between the results of viscous and Sisko fluids. (orig.)

  11. Hall and Heat Transfer Effects on the Steady Flow of a Sisko Fluid

    Science.gov (United States)

    Hayat, Tasawar; Maqbool, Khadija; Asghar, Saleem

    2009-12-01

    This investigation is concerned with the flow and heat transfer analysis between two disks rotating about non-coaxial axes normal to the disks. The constitutive equation of an incompressible Sisko fluid is used. The fluid is electrically conducting and the Hall effect is taken into account. Analytic solutions of the governing nonlinear problem is obtained by homotopy analysis method (HAM). The graphs are presented and discussed. Finally a comparison is made between the results of viscous and Sisko fluids

  12. Properties of Hall magnetohydrodynamic waves modified by electron inertia and finite Larmor radius effects

    International Nuclear Information System (INIS)

    Damiano, P. A.; Wright, A. N.; McKenzie, J. F.

    2009-01-01

    The linear wave equation (sixth order in space and time) and the corresponding dispersion relation is derived for Hall magnetohydrodynamic (MHD) waves including electron inertial and finite Larmor radius effects together with several limiting cases for a homogeneous plasma. We contrast these limits with the solution of the full dispersion relation in terms of wave normal (k perpendicular ,k || ) diagrams to clearly illustrate the range of applicability of the individual approximations. We analyze the solutions in terms of all three MHD wave modes (fast, slow, and Alfven), with particular attention given to how the Alfven branch (including the cold ideal field line resonance (FLR) [D. J. Southwood, Planet. Space Sci. 22, 483 (1974)]) is modified by the Hall term and electron inertial and finite Larmor radius effects. The inclusion of these terms breaks the degeneracy of the Alfven branch in the cold plasma limit and displaces the asymptote position for the FLR to a line defined by the electron thermal speed rather than the Alfven speed. For a driven system, the break in this degeneracy implies that a resonance would form at one field line for small k perpendicular and then shift to another as k perpendicular →∞. However for very large ωk perpendicular /V A , Hall term effects lead to a coupling to the whistler mode, which would then transport energy away from the resonant layer. The inclusion of the Hall term also significantly effects the characteristics of the slow mode. This analysis reveals an interesting 'swapping' of the perpendicular root behavior between the slow and Alfven branches.

  13. Orbital magnetic moment and extrinsic spin Hall effect for iron impurities in gold

    Czech Academy of Sciences Publication Activity Database

    Shick, Alexander; Kolorenč, Jindřich; Janiš, Václav; Lichtenstein, A.I.

    2011-01-01

    Roč. 84, č. 11 (2011), "113112-1"-"113112-4" ISSN 1098-0121 R&D Projects: GA ČR(CZ) GAP204/10/0330; GA AV ČR IAA100100912 Institutional research plan: CEZ:AV0Z10100520 Keywords : spin Hall effect * XMCD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.691, year: 2011 http://prb.aps.org/abstract/PRB/v84/i11/e113112

  14. Interlayer Hall effect in double quantum wells subject to in-plane magnetic fields

    Czech Academy of Sciences Publication Activity Database

    Kolorenč, Jindřich; Smrčka, Ludvík; Středa, Pavel

    2002-01-01

    Roč. 66, č. 8 (2002), s. 085301-1 - 085301-7 ISSN 0163-1829 R&D Projects: GA ČR GA202/01/0754; GA ČR GA202/01/0764 Institutional research plan: CEZ:AV0Z1010914 Keywords : double - layer two-dimensional electron system * magnetotransport * Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.327, year: 2002

  15. Spin-Hall effect of collimated electrons in zinc-blende semiconductors

    International Nuclear Information System (INIS)

    Fujita, T.; Jalil, M.B.A.; Tan, S.G.

    2009-01-01

    We describe an intrinsic spin-Hall effect (SHE) in n-type bulk zinc-blende semiconductors with a topological origin. When a collimated flux of electrons is injected into a zinc-blende semiconductor with Dresselhaus spin-orbit interaction, a nontrivial gauge structure appears in the momentum (k → -) space of the electrons. The Berry curvature of this gauge field and the corresponding Lorentz force in k → -space results in a finite SHE. The value of the spin-Hall current is found to be highly dependent on the degree of electron collimation, which may be varied by means of gate electrodes. Therefore, the system may potentially be useful as an electronically controllable source of pure spin-current for spintronic applications.

  16. Effect of Anode Magnetic Shield on Magnetic Field and Ion Beam in Cylindrical Hall Thruster

    International Nuclear Information System (INIS)

    Zhao Jie; Wang Shiqing; Liu Jian; Xu Li; Tang Deli; Geng Shaofei

    2010-01-01

    Numerical simulation of the effect of the anode magnetic shielding on the magnetic field and ion beam in a cylindrical Hall thruster is presented. The results show that after the anode is shielded by the magnetic shield, the magnetic field lines near the anode surface are obviously convex curved, the ratio of the magnetic mirror is enhanced, the width of the positive magnetic field gradient becomes larger than that without the anode magnetic shielding, the radial magnetic field component is enhanced, and the discharge plasma turbulence is reduced as a result of keeping the original saddle field profile and the important role the other two saddle field profiles play in restricting electrons. The results of the particle in cell (PIC) numerical simulation show that both the ion number and the energy of the ion beam increase after the anode is shielded by the magnetic shield. In other words, the specific impulse of the cylindrical Hall thruster is enhanced.

  17. Cooling of chiral heat transport in the quantum Hall effect regime of graphene

    Science.gov (United States)

    Slizovskiy, Sergey; Fal'ko, Vladimir

    2017-08-01

    In the quantum Hall effect (QHE) regime, heat is carried by electrons in the edge states of Landau levels. Here, we study cooling of hot electrons propagating along the edge of graphene at the filling factor ν =±2 , mediated by acoustic phonons. We determine the temperature profile extended from a hot spot, where the Hall current is injected into graphene from a metallic contact, taking into account specifics of boundary conditions for lattice displacements in graphene in a van der Waals heterostructure with an insulating substrate. Our calculations, performed using generic boundary conditions for Dirac electrons, show that emission of phonons can explain a short cooling length observed in graphene-based QHE devices by Nahm, Hwang, and Lee [Phys. Rev. Lett. 110, 226801 (2013), 10.1103/PhysRevLett.110.226801].

  18. Hall-effect destabilization of global kink modes in a paramagnetic pinch

    International Nuclear Information System (INIS)

    Gurin, A.A.

    1991-01-01

    It has been noted that when averaged over the kink magnetic oscillations observed experimentally in pinches with a reversed field, the Hall electric field generates a solenoidal field that can invert the longitudinal magnetic field on the surface of the plasma column. For a such a magnetic dynamo mechanism to occur, the magnetic oscillations in the current configuration for diffusive pinches must be capable of self-excitation. Here the treatment of Hall effects is of particular interest, because studies of current equilibria have shown that they are unstable to excitation of helicon modes, which arise exclusively through freezing of the magnetic field into the current-carrying electrons. In this paper the author shows that if the characteristic current parameters in the pinch are such that the pinch is highly paramagnetic, the global m = 1 helicon mode is unstable

  19. Disentanglement of bulk and interfacial spin Hall effect in ferromagnet/normal metal interface

    Science.gov (United States)

    Zhou, X.; Tang, M.; Fan, X. L.; Qiu, X. P.; Zhou, S. M.

    2016-10-01

    Spin Hall effect in PdPt alloys in contact with ferromagnetic Ni80Fe20 alloys has been studied by spin torque ferromagnetic resonance technique. The spin torque spin Hall angle (ST-SHA) proves to be contributed by the interfacial and bulk SHAs. The bulk SHA is dominated by the skew scattering and reaches a maximal value for the largest randomization of Pt and Pd atoms at the intermediate alloy composition. In particular, the interfacial SHA becomes prominent for Pt-rich alloys. This phenomenon indicates the enhanced Rashba spin-orbit coupling at the interface, as Pt has a stronger spin-orbit coupling and larger z -potential gradient compared to Pd. The present work highlights the interfacial SHA and provides a pathway to improve the functionality and performance of the next generation spintronic devices.

  20. The fractional quantum Hall effect: Chern-Simons mapping, duality, Luttinger liquids and the instanton vacuum

    International Nuclear Information System (INIS)

    Skoric, B.; Pruisken, A.M.M.

    1999-01-01

    We derive, from first principles, the complete Luttinger liquid theory of abelian quantum Hall edge states. This theory includes disorder and Coulomb interactions as well as the coupling to external electromagnetic fields. We introduce a theory of spatially separated edge modes, find an enlarged dual symmetry and obtain a complete classification of quasiparticle operators and tunneling exponents. The chiral anomaly on the edge is used to obtain unambiguously the Hall conductance. In resolving the problem of counter-flowing edge modes, we find that the long range Coulomb interactions play a fundamental role. In order to set up a theory for arbitrary ν we use the idea of a two-dimensional network of percolating edge modes. We derive an effective, single mode Luttinger liquid theory for tunneling processes into the edge which yields a continuous tunneling exponent 1/ν. The network approach is also used to re-derive the instanton vacuum theory for plateau transitions

  1. Hall effect in high- Tc Y 1Ba 2Cu 3O 7-δ superconductor

    Science.gov (United States)

    Vezzoli, G. C.; Burke, T.; Moon, B. M.; Lalevic, B.; Safari, A.; Sundar, H. G. K.; Bonometti, R.; Alexander, C.; Rau, C.; Waters, K.

    1989-04-01

    We have performed point-by-point and continuous Hall effect experiments as a function of temperature in polycrystalline Y 1Ba 2Cu 3O 7-δ. We have shown that the positive Hall constant shows an abrupt increase upon decreasing temperature at a value just above Tc. This temperature corresponds to where the resistance versus temperature data deviates from linearity. At very high fields of 6.8 and 15 T we observe a subsequent decrease in RH. We interpret these data as supportive of a contribution toward the superconductivity mechanism arising from internal excitions or change transfer excitations such that the bound exciton concentration increases near Tc at the expense of positive carries which are reflected in both bound and free holes.

  2. Valley polarized quantum Hall effect and topological insulator phase transitions in silicene

    KAUST Repository

    Tahir, M.

    2013-01-25

    The electronic properties of silicene are distinct from both the conventional two dimensional electron gas and the famous graphene due to strong spin orbit interaction and the buckled structure. Silicene has the potential to overcome limitations encountered for graphene, in particular the zero band gap and weak spin orbit interaction. We demonstrate a valley polarized quantum Hall effect and topological insulator phase transitions. We use the Kubo formalism to discuss the Hall conductivity and address the longitudinal conductivity for elastic impurity scattering in the first Born approximation. We show that the combination of an electric field with intrinsic spin orbit interaction leads to quantum phase transitions at the charge neutrality point, providing a tool to experimentally tune the topological state. Silicene constitutes a model system for exploring the spin and valley physics not accessible in graphene due to the small spin orbit interaction.

  3. Investigation of the Hall Effect Thruster Breathing Mode and Spoke Mode Instabilities in the Very Near Field

    Data.gov (United States)

    National Aeronautics and Space Administration — One of the most practical forms of electric propulsion is the Hall Effect Thruster (HET), which makes use of electric and magnetic fields to create and eject a...

  4. Hall effect in the coma of 67P/Churyumov-Gerasimenko

    Science.gov (United States)

    Huang, Z.; Tóth, G.; Gombosi, T. I.; Jia, X.; Combi, M. R.; Hansen, K. C.; Fougere, N.; Shou, Y.; Tenishev, V.; Altwegg, K.; Rubin, M.

    2018-04-01

    Magnetohydrodynamics simulations have been carried out in studying the solar wind and cometary plasma interactions for decades. Various plasma boundaries have been simulated and compared well with observations for comet 1P/Halley. The Rosetta mission, which studies comet 67P/Churyumov-Gerasimenko, challenges our understanding of the solar wind and comet interactions. The Rosetta Plasma Consortium observed regions of very weak magnetic field outside the predicted diamagnetic cavity. In this paper, we simulate the inner coma with the Hall magnetohydrodynamics equations and show that the Hall effect is important in the inner coma environment. The magnetic field topology becomes complex and magnetic reconnection occurs on the dayside when the Hall effect is taken into account. The magnetic reconnection on the dayside can generate weak magnetic field regions outside the global diamagnetic cavity, which may explain the Rosetta Plasma Consortium observations. We conclude that the substantial change in the inner coma environment is due to the fact that the ion inertial length (or gyro radius) is not much smaller than the size of the diamagnetic cavity.

  5. Outline of a theory of the two-dimensional hall effect in the quantum limit

    Energy Technology Data Exchange (ETDEWEB)

    Tosatti, E. (Scuola Internazionale Superiore di Studi Avanzati, Trieste (Italy); International Centre for Theoretical Physics, Trieste (Italy); Consiglio Nazionale delle Ricerche, Trieste (Italy). Gruppo Nazionale di Struttura della Materia); Parrinello, M. (International Centre for Theoretical Physics, Trieste (Italy); Scuola Internazionale Superiore di Studi Avanzati, Trieste (Italy); Consiglio Nazionale delle Ricerche, Trieste (Italy). Gruppo Nazionale di Struttura della Materia)

    1983-03-05

    The ground state of two-dimensional electrons of density N/L/sup 2/ in a strong transverse magnetic field B is discussed in terms of localized magnetic functions. For all ''commensurate'' fractional fillings of the n=0 Landau level, occurring at Bsub(st)=(s/sup 2/+t/sup 2/+st)2..pi..(h/2..pi..)cN/eL/sup 2/, with s, t integers, it is found that the ground state is a triangular lattice. This lattice has unusual properties, because it is tied to the magnetic functions. In particular, it has a finite Hall conductivity sigmasub(xy)=e/sup 2//2..pi..(h/2..pi..)(s/sup 2/+t/sup 2/+st) and it also exhibits perfect diamagnetism relative to Bsub(st). It does, however, display no proper Meissner effect, because the London depth is macroscopically large. The excess field B-Bsub(st) gives rise instead to defects in the lattice, where the extra electrons (holes) become ''interstitials'' (''vacancies''). If the defects are free to move, the Hall conductivity will not stay quantized. On the other hand, if all defects are pinned by inhomogeneities, Hall plateaux are expected around each Bsub(st). This picture, while providing a natural explanation for the quantized Hall effect at both integer and fractional filling, leads to a simple understanding of the plateau width vs. temperature and simple quality, and can also explain, at finite temperatures, the behaviour of the longitudinal conductivity sigmasub(yy) and its observed asymmetry for integer filling.

  6. A model study of present-day Hall-effect circulators

    Energy Technology Data Exchange (ETDEWEB)

    Placke, B. [RWTH Aachen University, Institute for Quantum Information, Aachen (Germany); Bosco, S. [RWTH Aachen University, Institute for Quantum Information, Aachen (Germany); Juelich-Aachen Research Alliance (JARA), Fundamentals of Future Information Technologiesh, Juelich (Germany); DiVincenzo, D.P. [RWTH Aachen University, Institute for Quantum Information, Aachen (Germany); Juelich-Aachen Research Alliance (JARA), Fundamentals of Future Information Technologiesh, Juelich (Germany); Peter Gruenberg Institute, Theoretical Nanoelectronics, Forschungszentrum Juelich, Juelich (Germany)

    2017-12-15

    Stimulated by the recent implementation of a three-port Hall-effect microwave circulator of Mahoney et al. (MEA), we present model studies of the performance of this device. Our calculations are based on the capacitive-coupling model of Viola and DiVincenzo (VD). Based on conductance data from a typical Hall-bar device obtained from a two-dimensional electron gas (2DEG) in a magnetic field, we numerically solve the coupled field-circuit equations to calculate the expected performance of the circulator, as determined by the S parameters of the device when coupled to 50Ω ports, as a function of frequency and magnetic field. Above magnetic fields of 1.5 T, for which a typical 2DEG enters the quantum Hall regime (corresponding to a Landau-level filling fraction ν of 20), the Hall angle θ{sub H} = tan{sup -1} σ{sub xy}/σ{sub xx} always remains close to 90 , and the S parameters are close to the analytic predictions of VD for θ{sub H} = π/2. As anticipated by VD, MEA find the device to have rather high (kΩ) impedance, and thus to be extremely mismatched to 50Ω, requiring the use of impedance matching. We incorporate the lumped matching circuits of MEA in our modeling and confirm that they can produce excellent circulation, although confined to a very small bandwidth. We predict that this bandwidth is significantly improved by working at lower magnetic field when the Landau index is high, e.g. ν = 20, and the impedance mismatch is correspondingly less extreme. Our modeling also confirms the observation of MEA that parasitic port-to-port capacitance can produce very interesting countercirculation effects. (orig.)

  7. Steady convection in MHD Benard problem with Hall effects

    Directory of Open Access Journals (Sweden)

    Lidia Palese

    2017-10-01

    Full Text Available In this paper we apply some variants of the classical energy method to study the nonlinear Lyapunov stability of the thermodiffusive equilibrium for a viscous thermoelectroconducting fully ionized fluid in a horizontal layer heated from below. The classical L^2 norm, too weak to highlight some stabilizing or unstabilizing effects, can be used to dominate the nonlinear terms. A more fine Lyapunov function is obtained by reformulating the initial perturbation evolution problem, in terms of some independent scalar fields. In such a way, if the principle of exchange of stabilities holds, we obtain the coincidence of linear and nonlinear stability bounds.

  8. Effects of facility backpressure on the performance and plume of a Hall thruster

    Science.gov (United States)

    Walker, Mitchell Louis Ronald

    2005-07-01

    This dissertation presents research aimed at understanding the relationship between facility background pressure, Hall thruster performance, and plume characteristics. Due to the wide range of facilities used in Hall thruster testing, it is difficult for researchers to make adequate comparisons between data sets because of both dissimilar instrumentation and backpressures. The differences in the data sets are due to the ingestion of background gas into the Hall thruster discharge channel and charge-exchange collisions in the plume. Thus, this research aims to understand facility effects and to develop the tools needed to allow researchers to obtain relevant plume and performance data for a variety of chambers and backpressures. The first portion of this work develops a technique for calibrating a vacuum chamber in terms of pressure to account for elevated backpressures while testing Hall thrusters. Neutral gas background pressure maps of the Large Vacuum Test Facility are created at a series of cold anode flow rates and one hot flow rate at two UM/AFRL P5 5 kW Hall thruster operating conditions. These data show that a cold flow pressure map can be used to approximate the neutral background pressure in the chamber with the thruster in operation. In addition, the data are used to calibrate a numerical model that accurately predicts facility backpressure within a vacuum chamber of specified geometry and pumping speed. The second portion of this work investigates how facility backpressure influences the plume, plume diagnostics, and performance of the P5 Hall thruster. Measurements of the plume and performance characteristics over a wide range of pressures show that ingestion, a decrease in the downstream plasma potential, and broadening of the ion energy distribution function cause the increase in thrust with backpressure. Furthermore, a magnetically-filtered Faraday probe accurately measures ion current density at elevated operating pressures. The third portion of

  9. Performance of a Cylindrical Hall-Effect Thruster with Magnetic Field Generated by Permanent Magnets

    Science.gov (United States)

    Polzin, Kurt A.; Raitses, Yevgeny; Fisch, Nathaniel J.

    2008-01-01

    While Hall thrusters can operate at high efficiency at kW power levels, it is difficult to construct one that operates over a broad envelope down to 100W while maintaining an efficiency of 45- 55%. Scaling to low power while holding the main dimensionless parameters constant requires a decrease in the thruster channel size and an increase in the magnetic field strength. Increasing the magnetic field becomes technically challenging since the field can saturate the miniaturized inner components of the magnetic circuit and scaling down the magnetic circuit leaves very little room for magnetic pole pieces and heat shields. An alternative approach is to employ a cylindrical Hall thruster (CHT) geometry. Laboratory model CHTs have operated at power levels ranging from the order of 50 Watts up to 1 kW. These thrusters exhibit performance characteristics which are comparable to conventional, annular Hall thrusters of similar size. Compared to the annular Hall thruster, the CHT has a lower insulator surface area to discharge chamber volume ratio. Consequently, there is the potential for reduced wall losses in the channel of a CHT, and any reduction in wall losses should translate into lower channel heating rates and reduced erosion. This makes the CHT geometry promising for low-power applications. Recently, a CHT that uses permanent magnets to produce the magnetic field topology was tested. This thruster has the promise of reduced power consumption over previous CHT iterations that employed electromagnets. Data are presented for two purposes: to expose the effect different controllable parameters have on the discharge and to summarize performance measurements (thrust, Isp, efficiency) obtained using a thrust stand. These data are used to gain insight into the thruster's operation and to allow for quantitative comparisons between the permanent magnet CHT and the electromagnet CHT.

  10. Effective action of a compressible quantum Hall state edge: Application to tunneling

    International Nuclear Information System (INIS)

    Levitov, L. S.; Shytov, A. V.; Halperin, B. I.

    2001-01-01

    The electrodynamical response of the edge of a compressible quantum Hall system affects tunneling into the edge. Using composite Fermi liquid theory, we derive an effective action for the edge modes interacting with tunneling charge. This action generalizes the chiral Luttinger liquid theory of the quantum Hall edge to compressible systems in which transport is characterized by a finite Hall angle. In addition to the standard terms, the action contains a dissipative term. The tunneling exponent is calculated as a function of the filling fraction for several models, including screened and unscreened long-range Coulomb interaction, as well as a short-range interaction. We find that tunneling exponents are robust and to a large extent insensitive to the particular model. We discuss recent tunneling measurements in overgrown cleaved edge systems, and demonstrate that the profile of charge density near the edge is very sensitive to the parameters of the system. In general, the density is nonmonotonic, and can deviate from the bulk value by up to 30%. Implications for the correspondence to chiral Luttinger edge theories are discussed

  11. Resonant scattering on impurities in the quantum Hall effect

    International Nuclear Information System (INIS)

    Gurvitz, A.

    1994-06-01

    We developed a new approach to carrier transport between the edge states via resonant scattering on impurities, which is applicable both for short and long range impurities. A detailed analysis of resonant scattering on a single impurity is performed. The results used for study of the inter-edge transport by multiple resonant hopping via different impurities' site. We found the total conductance can be obtained from an effective Schroedinger equation with constant diagonal matrix elements in the Hamiltonian, where the complex non-diagonal matrix elements are the amplitudes of a carrier hopping between different impurities. It is explicitly shown how the complex phase leads to Aharonov-Bohm oscillations in the total conductance. Neglecting the contribution of self-crossing resonant-percolation trajectories, we found that the inter-edge carrier transport is similar to propagation in one-dimensional system with off-diagonal disorder. Then we demonstrated that each Landau band has an extended state Ε Ν , while all other states are localized, and the localization length behaves as L - 1 Ν (Ε) ∼ (Ε - Ε Ν ) 2 . (author)

  12. Valley-filtered edge states and quantum valley Hall effect in gated bilayer graphene.

    Science.gov (United States)

    Zhang, Xu-Long; Xu, Lei; Zhang, Jun

    2017-05-10

    Electron edge states in gated bilayer graphene in the quantum valley Hall (QVH) effect regime can carry both charge and valley currents. We show that an interlayer potential splits the zero-energy level and opens a bulk gap, yielding counter-propagating edge modes with different valleys. A rich variety of valley current states can be obtained by tuning the applied boundary potential and lead to the QVH effect, as well as to the unbalanced QVH effect. A method to individually manipulate the edge states by the boundary potentials is proposed.

  13. Performance of a Cylindrical Hall-Effect Thruster Using Permanent Magnets

    Science.gov (United States)

    Polzin, Kurt A.; Raitses, Y.; Merino, E.; Fisch, N. J.

    2009-01-01

    While annular Hall thrusters can operate at high efficiency at kW power levels, it is difficult to construct one that operates over a broad envelope from 1 kW down to 100 W while maintaining an efficiency of 45-55%. Scaling to low power while holding the main dimensionless parameters constant requires a decrease in the thruster channel size and an increase in the magnetic field strength. Increasing the magnetic field becomes technically challenging since the field can saturate the miniaturized inner components of the magnetic circuit and scaling down the magnetic circuit leaves very little room for magnetic pole pieces and heat shields. In addition, the central magnetic pole piece defining the interior wall of the annular channel can experience excessive heat loads in a miniaturized Hall thruster, with the temperature eventually exceeding the Curie temperature of the material and in extreme circumstances leading to accelerated erosion of the channel wall. An alternative approach is to employ a cylindrical Hall thruster (CHT) geometry. Laboratory model CHTs have operated at power levels ranging from 50 W up to 1 kW. These thrusters exhibit performance characteristics that are comparable to conventional, annular Hall thrusters of similar size. Compared to the annular Hall thruster, the CHTs insulator surface area to discharge chamber volume ratio is lower. Consequently, there is the potential for reduced wall losses in the channel of a CHT, and any reduction in wall losses should translate into lower channel heating rates and reduced erosion, making the CHT geometry promising for low-power applications. This potential for high performance in the low-power regime has served as the impetus for research and development efforts aimed at understanding and improving CHT performance. Recently, a 2.6 cm channel diameter permanent magnet CHT (shown in Fig. 1) was tested. This thruster has the promise of reduced power consumption over previous CHT iterations that employed

  14. Living and Learning: "Does Residence Hall Roommate Placement of Traditional Freshman Students at MSOE Effect Their Satisfaction with the Residence Halls?"

    Science.gov (United States)

    Breese, William Ellis, II

    2012-01-01

    The purpose of this study is to examine if residence hall roommate placement of traditional freshman students at MSOE affects their satisfaction with the residence halls. The idea behind this study is that if residence hall roommate placement is done purposefully, with the participation of incoming freshmen through appropriate placement…

  15. Compositeness Effects in the Anomalous Weak-Magnetic Moment of Leptons

    CERN Document Server

    González-Garciá, M Concepción

    1996-01-01

    We investigate the effects induced by excited leptons, at the one-loop level, in the anomalous magnetic and weak-magnetic form factors of the leptons. Using a general effective Lagrangian approach to describe the couplings of the excited leptons, we compute their contributions to the weak-magnetic moment of the $\\tau$ lepton, which can be measured on the $Z$ peak, and we compare it with the contributions to $g_\\mu - 2$, measured at low energies.

  16. Anomalous effect of small doses of ionizing radiation on metals and alloys

    International Nuclear Information System (INIS)

    Chernov, I.P.; Mamontov, A.P.; Botaki, A.A.; Cherdantsev, P.A.; Chakhlov, B.V.; Sharov, S.R.; Timoshnikov, Yu.A.; Filipenko, L.A.

    1986-01-01

    The effect of small doses of 60 Co gamma rays on copper, tungsten, and WCo alloys has been investigated. A decrease in the concentration of material defects under the influence of small doses of ionizing radiation was found. Also the structural rearrangement of the crystal was found to be still in progress after irradiation ceased. The mechanism of the anomalous effect of small doses of ionizing radiation on metals and alloys is discussed in terms of the electron energy scheme. (U.K.)

  17. Qualitative models of magnetic field accelerated propagation in a plasma due to the Hall effect

    International Nuclear Information System (INIS)

    Kukushkin, A.B.; Cherepanov, K.V.

    2000-01-01

    Two qualitatively new models of accelerated magnetic field propagation (relative to normal diffusion) in a plasma due to the Hall effect are developed within the frames of the electron magnetic hydrodynamics. The first model is based on a simple hydrodynamic approach, which, in particular, reproduces the number of known theoretical results. The second one makes it possible to obtain exact analytical description of the basic characteristics of the magnetic field accelerated propagation in a inhomogeneous iso-thermic plasma, namely, the magnetic field front and its effective width [ru

  18. The enigma of the ν=2+3/8 fractional quantum Hall effect

    DEFF Research Database (Denmark)

    Hutasoit, Jimmy; nrc762, nrc762; Mukherjee, Sutirtha

    2017-01-01

    The fractional quantum Hall effect at ν=2+3/8, which has been definitively observed, is one of the last fractions for which no viable explanation has so far been demonstrated. Our detailed study suggests that it belongs to a new class of exotic states described by the Bonderson-Slingerland wave...... function. Its excitations are non-Abelian anyons similar to those of the well studied Pfaffian state at 5/2, but its wave function has a more complex structure. Using the effective edge theory, we make predictions for various measurable quantities that should enable a confirmation of the underlying...

  19. Physics Nobel Prize Goes to Tsui, Stormer and Laughlin for the Fractional Quantum Hall Effect

    Energy Technology Data Exchange (ETDEWEB)

    Schwarzschild, Bertram

    1998-12-15

    This year's Nobel Prize in Physics is shared by Robert Laughlin (Stanford), Horst Stormer (Columbia University and Bell Laboratories) and Daniel Tsui (Princeton), for their roles in the discovery and explanation of the fractional quantum Hall effect. In 1982, when Stormer and Tsui were experimenters at Bell Labs, they and their colleague Arthur Gossard discovered this totally unexpected quantum effect in the transport properties of two‐dimensional electron gases at low temperature in strong magnetic fields.’ (See PHYSICS TODAY, July 1983, page 19.)

  20. Hall effects on peristalsis of boron nitride-ethylene glycol nanofluid with temperature dependent thermal conductivity

    Science.gov (United States)

    Abbasi, F. M.; Gul, Maimoona; Shehzad, S. A.

    2018-05-01

    Current study provides a comprehensive numerical investigation of the peristaltic transport of boron nitride-ethylene glycol nanofluid through a symmetric channel in presence of magnetic field. Significant effects of Brownian motion and thermophoresis have been included in the energy equation. Hall and Ohmic heating effects are also taken into consideration. Resulting system of non-linear equations is solved numerically using NDSolve in Mathematica. Expressions for velocity, temperature, concentration and streamlines are derived and plotted under the assumption of long wavelength and low Reynolds number. Influence of various parameters on heat and mass transfer rates have been discussed with the help of bar charts.

  1. Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jung-Chuan [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Huang, Leng-Wei [Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China); Hung, Dung-Shing, E-mail: dshung@mail.mcu.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Information and Telecommunications Engineering, Ming Chuan University, Taipei 111, Taiwan (China); Chiang, Tung-Han [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Huang, J. C. A., E-mail: jcahuang@mail.ncku.edu.tw [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Liang, Jun-Zhi [Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Department of Physics, Fu Jen Catholic University, Taipei 242, Taiwan (China); Lee, Shang-Fan, E-mail: leesf@phys.sinica.edu.tw [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China)

    2014-02-03

    The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered.

  2. Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

    International Nuclear Information System (INIS)

    Lee, Jung-Chuan; Huang, Leng-Wei; Hung, Dung-Shing; Chiang, Tung-Han; Huang, J. C. A.; Liang, Jun-Zhi; Lee, Shang-Fan

    2014-01-01

    The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered

  3. The Quantum Hall Effect: after 20 years still a challenge for theory and experiment

    Science.gov (United States)

    Landwehr, G.

    A short review of the pre-history of the discovery of the QHE is given. It is shown that the effect could have been recognized several years earlier. The subsequent development is briefly sketched and the importance of the availability of high quality heterostructures is emphasized. It is shown that modulation doped HgTe/(CdHg) Te single quantum wells are promising for future research on the integer quantum Hall effect. The definition of the von Klitzing constant: 25812,807 ω by international agreement put resistance measurements on a new and reliable basis.

  4. Invited Article: An integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument

    Science.gov (United States)

    Kühne, P.; Herzinger, C. M.; Schubert, M.; Woollam, J. A.; Hofmann, T.

    2014-07-01

    We report on the development of the first integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument, covering an ultra wide spectral range from 3 cm-1 to 7000 cm-1 (0.1-210 THz or 0.4-870 meV). The instrument comprises four sub-systems, where the magneto-cryostat-transfer sub-system enables the usage of the magneto-cryostat sub-system with the mid-infrared ellipsometer sub-system, and the far-infrared/terahertz ellipsometer sub-system. Both ellipsometer sub-systems can be used as variable angle-of-incidence spectroscopic ellipsometers in reflection or transmission mode, and are equipped with multiple light sources and detectors. The ellipsometer sub-systems are operated in polarizer-sample-rotating-analyzer configuration granting access to the upper left 3 × 3 block of the normalized 4 × 4 Mueller matrix. The closed cycle magneto-cryostat sub-system provides sample temperatures between room temperature and 1.4 K and magnetic fields up to 8 T, enabling the detection of transverse and longitudinal magnetic field-induced birefringence. We discuss theoretical background and practical realization of the integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument, as well as acquisition of optical Hall effect data and the corresponding model analysis procedures. Exemplarily, epitaxial graphene grown on 6H-SiC, a tellurium doped bulk GaAs sample and an AlGaN/GaN high electron mobility transistor structure are investigated. The selected experimental datasets display the full spectral, magnetic field and temperature range of the instrument and demonstrate data analysis strategies. Effects from free charge carriers in two dimensional confinement and in a volume material, as well as quantum mechanical effects (inter-Landau-level transitions) are observed and discussed exemplarily.

  5. Anomalous Josephson effect in semiconductor nanowire with strong spin-orbit interaction and Zeeman effect

    Science.gov (United States)

    Yokoyama, Tomohiro; Eto, Mikio; Nazarov, Yuli

    2014-03-01

    We theoretically investigate the Josephson junction using quasi-one dimensional semiconductor nanowires with strong spin-orbit (SO) interaction, e.g., InSb. First, we examine a simple model using a single scatterer to describe the elastic scattering due to impurities and SO interaction in the normal region.[1] The Zeeman effect is taken into account by the spin-dependent phase shift of electron and hole through the system. The interplay between SO interaction and Zeeman effect results in a finite supercurrent even when the phase difference between two superconductors is zero. Moreover, the critical current depends on its current direction if more than one conduction channel is present in the nanowire. Next, we perform a numerical simulation by the tight-binding model for the nanowire to confirm our simple model. Then, we show that a spin-dependent Fermi velocity due to the SO interaction causes the anomalous Josephson effect.

  6. The influence of profiled ceilings on sports hall acoustics : Ground effect predictions and scale model measurements

    NARCIS (Netherlands)

    Wattez, Y.C.M.; Tenpierik, M.J.; Nijs, L.

    2018-01-01

    Over the last few years, reverberation times and sound pressure levels have been measured in many sports halls. Most of these halls, for instance those made from stony materials, perform as predicted. However, sports halls constructed with profiled perforated steel roof panels have an unexpected

  7. Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si

    Science.gov (United States)

    Lou, Paul C.; Kumar, Sandeep

    2018-04-01

    Spin current experiences minimal dephasing and scattering in Si due to small spin-orbit coupling and spin-lattice interactions is the primary source of spin relaxation. We hypothesize that if the specimen dimension is of the same order as the spin diffusion length then spin polarization will lead to non-equilibrium spin accumulation and emergent phase transition. In n-Si, spin diffusion length has been reported up to 6 μm. The spin accumulation in Si will modify the thermal transport behavior of Si, which can be detected with thermal characterization. In this study, we report observation of spin-Hall effect and emergent antiferromagnetic phase transition behavior using magneto-electro-thermal transport characterization. The freestanding Pd (1 nm)/Ni80Fe20 (75 nm)/MgO (1 nm)/n-Si (2 μm) thin film specimen exhibits a magnetic field dependent thermal transport and spin-Hall magnetoresistance behavior attributed to Rashba effect. An emergent phase transition is discovered using self-heating 3ω method, which shows a diverging behavior at 270 K as a function of temperature similar to a second order phase transition. We propose that spin-Hall effect leads to the spin accumulation and resulting emergent antiferromagnetic phase transition. We propose that the length scale for Rashba effect can be equal to the spin diffusion length and two-dimensional electron gas is not essential for it. The emergent antiferromagnetic phase transition is attributed to the site inversion asymmetry in diamond cubic Si lattice.

  8. Fast plasma heating by anomalous and inertial resistivity effects in the solar atmosphere

    Science.gov (United States)

    Duijveman, A.; Hoyng, P.; Ionson, J. A.

    1981-01-01

    A simple model is presented to describe fast plasma heating by anomalous and inertial resistivity effects. It is noted that a small fraction of the plasma contains strong currents that run parallel to the magnetic field and are driven by an exponentiating electric field. The anomalous character of the current dissipation derives from the excitation of electrostatic ion-cyclotron and/or ion-acoustic waves. The possible role of resistivity deriving from geometrical effects ('inertial resistivity') is also considered. Using a marginal stability analysis, equations for the average electron and ion temperatures are derived and numerically solved. No loss mechanisms are taken into account. The evolution of the plasma is described as a path in the drift velocity diagram, where the drift velocity is plotted as a function of the electron to ion temperature ratio.

  9. The representation of the anomalous Einstein effects with the aid of an effective metric

    Energy Technology Data Exchange (ETDEWEB)

    Treder, H.J.; Gottloeber, S.

    1977-01-01

    An investigation is conducted concerning the possibility of an excess of solar gravitooptical Einstein effects relative to certain theoretical predictions. The anomaly of the Einstein shift is described with the aid of a metric which depends on the solar radiation field, taking into account an approach reported by Treder (1971). It is found that the anomalies of the Einstein effects are frequency dependent. In agreement with radio-astronomical data and the results of radar measurements, there is no excess at low frequencies. It is pointed out that an anomalous Einstein shift with the obtained characteristics, which involves the displacement of the spectral frequencies of the light in proportion to the difference of the square roots of the spectral energy densities at the places of the emission and absorption of the photons, should be detectable in principle also in laboratory measurements.

  10. Anisotropic magnetoresistance and piezoelectric effect in GaAs Hall samples

    Science.gov (United States)

    Ciftja, Orion

    2017-02-01

    Application of a strong magnetic field perpendicular to a two-dimensional electron system leads to a variety of quantum phases ranging from incompressible quantum Hall liquid to Wigner solid, charge density wave, and exotic non-Abelian states. A few quantum phases seen in past experiments on GaAs Hall samples of electrons show pronounced anisotropic magnetoresistance values at certain weak magnetic fields. We argue that this might be due to the piezoelectric effect that is inherent in a semiconductor host such as GaAs. Such an effect has the potential to create a sufficient in-plane internal strain that will be felt by electrons and will determine the direction of high and low resistance. When Wigner solid, charge density wave, and isotropic liquid phases are very close in energy, the overall stability of the system is very sensitive to local order and, thus, can be strongly influenced even by a weak perturbation such as the piezoelectric-induced effective electron-electron interaction, which is anisotropic. In this work, we argue that an anisotropic interaction potential may stabilize anisotropic liquid phases of electrons even in a strong magnetic field regime where normally one expects to see only isotropic quantum Hall or isotropic Fermi liquid states. We use this approach to support a theoretical framework that envisions the possibility of an anisotropic liquid crystalline state of electrons in the lowest Landau level. In particular, we argue that an anisotropic liquid state of electrons may stabilize in the lowest Landau level close to the liquid-solid transition region at filling factor ν =1 /6 for a given anisotropic Coulomb interaction potential. Quantum Monte Carlo simulations for a liquid crystalline state with broken rotational symmetry indicate stability of liquid crystalline order consistent with the existence of an anisotropic liquid state of electrons stabilized by anisotropy at filling factor ν =1 /6 of the lowest Landau level.

  11. Anomalous Wtb coupling effects in the weak radiative B-meson decay

    International Nuclear Information System (INIS)

    Grzadkowski, Bohdan; Misiak, Mikolaj

    2008-01-01

    We study the effect of anomalous Wtb couplings on the B→X s γ branching ratio. The considered couplings are introduced as parts of gauge-invariant dimension-six operators that are built out of the standard model fields only. One-loop contributions from the charged-current vertices are assumed to be of the same order as the tree-level flavor-changing neutral current ones. Bounds on the corresponding Wilson coefficients are derived.

  12. Enhanced and switchable spin Hall effect of light near the Brewster angle on reflection

    International Nuclear Information System (INIS)

    Luo Hailu; Zhou Xinxing; Shu Weixing; Wen Shuangchun; Fan Dianyuan

    2011-01-01

    We theorize an enhanced and switchable spin Hall effect (SHE) of light near the Brewster angle on reflection and demonstrate it experimentally. The obtained spin-dependent splitting reaches 3200 nm near the Brewster angle, which is 50 times larger than the previously reported values in refraction. We find that the amplifying factor in weak measurement is not a constant, which is significantly different from that in refraction. As an analogy of SHE in an electronic system, a switchable spin accumulation in SHE of light is detected. We were able to switch the direction of the spin accumulations by slightly adjusting the incident angle.

  13. Effect of dust on tilted electrostatic resistive instability in a Hall thruster

    Science.gov (United States)

    Tyagi, Jasvendra; Singh, Sukhmander; Malik, Hitendra K.

    2018-03-01

    Effect of negatively charged dust on resistive instability corresponding to the electrostatic wave is investigated in a Hall thruster plasma when this purely azimuthal wave is tilted and strong axial component of wave vector is developed. Analytical calculations are done to obtain the relevant dispersion equation, which is solved numerically to investigate the growth rate of the instability. The magnitude of the growth rate in the plasma having dust particles is found to be much smaller than the case of pure plasma. However, the instability grows faster for the increasing dust density and the higher charge on the dust particles. The higher magnetic field is also found to support the instability.

  14. Hall effect biosensors with ultraclean graphene film for improved sensitivity of label-free DNA detection

    KAUST Repository

    Loan, Phan Thi Kim

    2017-07-19

    The quality of graphene strongly affects the performance of graphene-based biosensors which are highly demanded for the sensitive and selective detection of biomolecules, such as DNA. This work reported a novel transfer process for preparing a residue-free graphene film using a thin gold supporting layer. A Hall effect device made of this gold-transferred graphene was demonstrated to significantly enhance the sensitivity (≈ 5 times) for hybridization detection, with a linear detection range of 1 pM – 100nM for DNA target. Our findings provide an efficient method to boost the sensitivity of graphene-based biosensors for DNA recognition.

  15. Detection of electrically modulated inverse spin Hall effect in an Fe/GaAs microdevice

    Czech Academy of Sciences Publication Activity Database

    Olejník, Kamil; Wunderlich, Joerg; Irvine, A.C.; Campion, R. P.; Amin, V.P.; Sinova, Jairo; Jungwirth, Tomáš

    2012-01-01

    Roč. 109, č. 7 (2012), , , "076601-1"-"076601-5" ISSN 0031-9007 EU Projects: European Commission(XE) 268066 - 0MSPIN; European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : spin Hall effect * spintronics * spin transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.943, year: 2012

  16. Spin-dependent Hall effect in degenerate semiconductors: a theoretical study

    International Nuclear Information System (INIS)

    Idrish Miah, M

    2008-01-01

    The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (V SDH ) is derived, and drift and diffusive contributions to V SDH are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V SDH increases in a degenerate semiconductor, consistent with the experimental observations. The expression for V SDH is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations.

  17. Enhanced Nonadiabaticity in Vortex Cores due to the Emergent Hall Effect

    KAUST Repository

    Bisig, André

    2017-01-04

    We present a combined theoretical and experimental study, investigating the origin of the enhanced nonadiabaticity of magnetic vortex cores. Scanning transmission x-ray microscopy is used to image the vortex core gyration dynamically to measure the nonadiabaticity with high precision, including a high confidence upper bound. We show theoretically, that the large nonadiabaticity parameter observed experimentally can be explained by the presence of local spin currents arising from a texture induced emergent Hall effect. This study demonstrates that the magnetic damping α and nonadiabaticity parameter β are very sensitive to the topology of the magnetic textures, resulting in an enhanced ratio (β/α>1) in magnetic vortex cores or Skyrmions.

  18. Anomalous effective action, Noether current, Virasoro algebra and Horizon entropy

    Energy Technology Data Exchange (ETDEWEB)

    Majhi, Bibhas Ranjan [IUCAA, Ganeshkhind, Pune University Campus, Post Bag 4, Pune (India); Hebrew University of Jerusalem, Racah Institute of Physics, Jerusalem (Israel); Chakraborty, Sumanta [IUCAA, Ganeshkhind, Pune University Campus, Post Bag 4, Pune (India)

    2014-05-15

    Several investigations show that in a very small length scale there exist corrections to the entropy of black hole horizon. Due to fluctuations of the background metric and the external fields the action incorporates corrections. In the low energy regime, the one-loop effective action in four dimensions leads to trace anomaly. We start from the Noether current corresponding to the Einstein-Hilbert plus the one-loop effective action to calculate the charge for the diffeomorphisms which preserve the Killing horizon structure. Then a bracket for the charges is calculated. We show that the Fourier modes of the bracket are exactly similar to the Virasoro algebra. Then using the Cardy formula the entropy is evaluated. Finally, the explicit terms of the entropy expression is calculated for a classical background. It turns out that the usual expression for the entropy; i.e. the Bekenstein-Hawking form, is not modified. (orig.)

  19. Anomalous Josephson effect controlled by an Abrikosov vortex

    Science.gov (United States)

    Mironov, S.; Goldobin, E.; Koelle, D.; Kleiner, R.; Tamarat, Ph.; Lounis, B.; Buzdin, A.

    2017-12-01

    The possibility of a fast and precise Abrikosov vortex manipulation by a focused laser beam opens the way to create laser-driven Josephson junctions. We theoretically demonstrate that a vortex pinned in the vicinity of the Josephson junction generates an arbitrary ground state phase which can be equal not only to 0 or π but to any desired φ0 value in between. Such φ0 junctions have many peculiar properties and may be effectively controlled by the optically driven Abrikosov vortex. Also we theoretically show that the Josephson junction with the embedded vortex can serve as an ultrafast memory cell operating at sub THz frequencies.

  20. Anomalous doping effects on charge transport in graphene nanoribbons.

    Science.gov (United States)

    Biel, Blanca; Blase, X; Triozon, François; Roche, Stephan

    2009-03-06

    We present first-principles calculations of quantum transport in chemically doped graphene nanoribbons with a width of up to 4 nm. The presence of boron and nitrogen impurities is shown to yield resonant backscattering, whose features are strongly dependent on the symmetry and the width of the ribbon, as well as the position of the dopants. Full suppression of backscattering is obtained on the pi-pi* plateau when the impurity preserves the mirror symmetry of armchair ribbons. Further, an unusual acceptor-donor transition is observed in zigzag ribbons. These unconventional doping effects could be used to design novel types of switching devices.

  1. Anomalous piezoelectric effects, found in the laboratory and reconstructed by numerical simulation

    Directory of Open Access Journals (Sweden)

    K. P. Teisseyre

    2002-06-01

    Full Text Available Various rocks and minerals, which are not piezoelectric in the common sense, exhibit transient electric polarization in response to sudden changes in stress load. This anomalous piezoelectric effect differs from the regular, static piezoelectric response, in which electric charges appear as a result of crystal lattice deformation. The anomalous piezoelectricity is dynamic decaying in a few seconds or a few tens of seconds. However, in some materials different polarization properties are discovered. To explain certain aspects of the polarization signal increase and decay, some complicated mechanisms of electric charge generation and relaxation need to be assumed in their number ? concurrence of two or three relaxation processes. The hypothetical mechanisms are only mentioned, as the purpose of this work is to construct numerical models, behaving like the rocks investigated. Examples of experimental plots are shown together with the results of the numerical simulation of these experiments.

  2. Predicting molecular scale skin-effect in electrochemical impedance due to anomalous subdiffusion mediated adsorption phenomenon

    Science.gov (United States)

    Kushagra, Arindam

    2016-02-01

    Anomalous subdiffusion governs the processes which are not energetically driven, on a molecular scale. This paper proposes a model to predict the response of electrochemical impedance due to such diffusion process. Previous works considered the use of fractional calculus to predict the impedance behaviour in response to the anomalous diffusion. Here, we have developed an expression which predicts the skin-effect, marked by an increase in the impedance with increasing frequency, in this regime. Negative inductances have also been predicted as a consequence of the inertial response of adsorbed species upon application of frequency-mediated perturbations. It might help the researchers in the fields of impedimetric sensors to choose the working frequency and those working in the field of batteries to choose the parameters, likewise. This work would shed some light into the molecular mechanisms governing the impedance when exposed to frequency-based perturbations like electromagnetic waves (microwaves to ionizing radiations) and in charge storage devices like batteries etc.

  3. Anomalous proximity effect and theoretical design for its realization

    Science.gov (United States)

    Ikegaya, Satoshi; Asano, Yasuhiro; Tanaka, Yukio

    2015-05-01

    We discuss the stability of zero-energy states appearing in a dirty normal metal attached to a superconducting thin film with Dresselhaus [110] spin-orbit coupling under an in-plane Zeeman field. The Dresselhaus superconductor preserves an additional chiral symmetry and traps more than one zero-energy state at its edges. All the zero-energy states at an edge belong to the same chirality in large Zeeman fields due to the effective p -wave pairing symmetry. The pure chiral nature of the wave function enables the zero-energy states to penetrate the dirty normal metal while retaining their high degree of degeneracy. We prove the perfect Andreev reflection into the dirty normal metal at zero energy.

  4. Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)

    Science.gov (United States)

    Wu, Jiin C.; Katti, Romney R.; Stadler, Henry L.

    1991-01-01

    The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.

  5. Design and development of DC high current sensor using Hall-Effect method

    Science.gov (United States)

    Dewi, Sasti Dwi Tungga; Panatarani, C.; Joni, I. Made

    2016-02-01

    This paper report a newly developed high DC current sensor by using a Hall effect method and also the measurement system. The Hall effect sensor receive the magnetic field generated by a current carrying conductor wire. The SS49E (Honeywell) magnetoresistive sensor was employed to sense the magnetic field from the field concentrator. The voltage received from SS49E then converted into digital by using analog to digital converter (ADC-10 bit). The digital data then processed in the microcontroller to be displayed as the value of the electric current in the LCD display. In addition the measurement was interfaced into Personal Computer (PC) using the communication protocols of RS232 which was finally displayed in real-time graphical form on the PC display. The performance test on the range ± 40 Ampere showed that the maximum relative error is 5.26%. It is concluded that the sensors and the measurement system worked properly according to the design with acceptable accuracy.

  6. Hall A

    Data.gov (United States)

    Federal Laboratory Consortium — The instrumentation in Hall A at the Thomas Jefferson National Accelerator Facility was designed to study electroand photo-induced reactions at very high luminosity...

  7. Hall C

    Data.gov (United States)

    Federal Laboratory Consortium — Hall C's initial complement of equipment (shown in the figure), includes two general-purpose magnetic spectrometers. The High Momentum Spectrometer (HMS) has a large...

  8. Edge mode velocities in the quantum Hall effect from a dc measurement

    International Nuclear Information System (INIS)

    Zucker, P T; Feldman, D E

    2015-01-01

    Because of the bulk gap, low energy physics in the quantum Hall effect is confined to the edges of the 2D electron liquid. The velocities of edge modes are key parameters of edge physics. They were determined in several quantum Hall systems from time-resolved measurements and high-frequency ac transport. We propose a way to extract edge velocities from dc transport in a point contact geometry defined by narrow gates. The width of the gates assumes two different sizes at small and large distances from the point contact. The Coulomb interaction across the gates depends on the gate width and affects the conductance of the contact. The conductance exhibits two different temperature dependencies at high and low temperatures. The transition between the two regimes is determined by the edge velocity. An interesting feature of the low-temperature I−V curve is current oscillations as a function of the voltage. The oscillations emerge due to charge reflection from the interface of the regions defined by the narrow and wide sections of the gates. (paper)

  9. Performance of a Permanent-Magnet Cylindrical Hall-Effect Thruster

    Science.gov (United States)

    Polzin, K. A.; Sooby, E. S.; Kimberlin, A. C.; Raites, Y.; Merino, E.; Fisch, N. J.

    2009-01-01

    The performance of a low-power cylindrical Hall thruster, which more readily lends itself to miniaturization and low-power operation than a conventional (annular) Hall thruster, was measured using a planar plasma probe and a thrust stand. The field in the cylindrical thruster was produced using permanent magnets, promising a power reduction over previous cylindrical thruster iterations that employed electromagnets to generate the required magnetic field topology. Two sets of ring-shaped permanent magnets are used, and two different field configurations can be produced by reorienting the poles of one magnet relative to the other. A plasma probe measuring ion flux in the plume is used to estimate the current utilization for the two magnetic topologies. The measurements indicate that electron transport is impeded much more effectively in one configuration, implying higher thrust efficiency. Thruster performance measurements on this configuration were obtained over a power range of 70-350 W and with the cathode orifice located at three different axial positions relative to the thruster exit plane. The thrust levels over this power range were 1.25-6.5 mN, with anode efficiencies and specific impulses spanning 4-21% and 400-1950 s, respectively. The anode efficiency of the permanent-magnet thruster compares favorable with the efficiency of the electromagnet thruster when the power consumed by the electromagnets is taken into account.

  10. The effect of Ni and Fe doping on Hall anomaly in vortex state of doped YBCO samples

    Directory of Open Access Journals (Sweden)

    M Nazarzadeh

    2010-09-01

    Full Text Available We have investigated hall effect on YBa2Cu3-xMxO7-δ (M=Ni, Fe bulk samples, with dopant amount 0 ≤ x ≤ 0.045 for Ni and 0 ≤ x ≤ 0.03 for Fe, with magnetic field (H=2.52, 4.61, 6.27 kOe perpendicular to sample’s surface with constant current 100 mA. Our study shows that as both dopants increases, TC decreases and it decreases faster by Ni . In these ranges of dopant and magnetic field the Hall sign reversal has been observed in all samples once and also ∆max has occurred in lower temperatures, its magnitude increases by Ni, and in Fe doped samples except in sample with dopant amount x=0.03, which almost decreases, that it can show effect of magnetic doping on hall effect.

  11. Observation of spin Hall effect in photon tunneling via weak measurements.

    Science.gov (United States)

    Zhou, Xinxing; Ling, Xiaohui; Zhang, Zhiyou; Luo, Hailu; Wen, Shuangchun

    2014-12-09

    Photonic spin Hall effect (SHE) manifesting itself as spin-dependent splitting escapes detection in previous photon tunneling experiments due to the fact that the induced beam centroid shift is restricted to a fraction of wavelength. In this work, we report on the first observation of this tiny effect in photon tunneling via weak measurements based on preselection and postselection technique on the spin states. We find that the spin-dependent splitting is even larger than the potential barrier thickness when spin-polarized photons tunneling through a potential barrier. This photonic SHE is attributed to spin-redirection Berry phase which can be described as a consequence of the spin-orbit coupling. These findings provide new insight into photon tunneling effect and thereby offer the possibility of developing spin-based nanophotonic applications.

  12. Theory of Topological Spin Hall Effect in Antiferromagnetic Skyrmion: Impact on Current-induced Motion

    KAUST Repository

    Akosa, Collins Ashu

    2017-09-09

    We demonstrate that the nontrivial magnetic texture of antiferromagnetic skyrmions (AFM-Sks) promotes a non-vanishing topological spin Hall effect (TSHE) on the flowing electrons. This results in a substantial enhancement of the non-adiabatic torque and hence improves the skyrmion mobility. This non-adiabatic torque increases when decreasing the skyrmion size, and therefore scaling down results in a much higher torque efficiency. In clean AFM-Sks, we find a significant boost of the TSHE close to van Hove singularity. Interestingly, this effect is enhanced away from the band gap in the presence of non-magnetic interstitial defects. Furthermore, unlike their ferromagnetic counterpart, TSHE in AFM-Sks increases with increase in disorder strength thus opening promising avenues for materials engineering of this effect.

  13. Is the anomalous effect an experimental evidence for the excitation of new exotic states in heavy-ion collisions

    International Nuclear Information System (INIS)

    Ion, D.B.; Ion, R.; Topor Pop, V.

    1984-10-01

    Lower bound on the mean free path of the projectile fragments from the relativistic heavy ion collisions are drived using generalized Rarita-Schwed's theorems. These bounds are compared with the experimental data on the anomalous mean free path observed in recent experiments. The near saturation of these bounds provide a specific interpretation of the anomalous effects as an experimental evidence for the excitation of those extreme nuclear states which saturate the limits of the convetional nuclear physics. (authors)

  14. Anomalous Josephson Effect in Junctions with Rashba Spin-Orbit Coupling

    Science.gov (United States)

    Nesterov, Konstantin; Houzet, Manuel; Meyer, Julia

    2015-03-01

    We study two-dimensional double-barrier SINIS Josephson junctions in which the inversion symmetry in the normal part is broken by Rashba spin-orbit coupling. In the presence of a suitably oriented Zeeman field in the normal part, the system displays the anomalous Josephson effect: the current is nonzero even at zero phase difference between two superconductors. We investigate this effect by means of the Ginzburg-Landau formalism and microscopic Green's functions approach in the clean limit. This work was supported in part by the Grants No. ANR-12-BS04-0016-03 and an EU-FP7 Marie Curie IRG.

  15. Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection

    International Nuclear Information System (INIS)

    Shin, H.; Kim, N.M.

    1999-01-01

    The effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide

  16. Suppressed compressibility of quantum Hall effect edge states in epitaxial graphene on SiC

    Science.gov (United States)

    Slizovskiy, Sergey; Fal'ko, Vladimir I.

    2018-02-01

    We determine conditions for the formation of compressible stripes near the quantum Hall effect (QHE) edges of top-gated epitaxial graphene on Si-terminated SiC (G/SiC) and compare those to graphene exfoliated onto insulating substrate in the field-effect-transistor (GraFET) geometry. For G/SiC, a large density of localized surface states on SiC just underneath graphene layer and charge transfer between them lead both to doping of graphene and to screening of potential profile near its edge. This suppresses formation of compressible stripes near QHE edges in graphene, making them much narrower than the corresponding compressible stripes in GraFETs.

  17. Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect

    Directory of Open Access Journals (Sweden)

    X. G. Li

    2016-01-01

    Full Text Available As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets and theoretically investigate the switching characteristics for SHE-RAM element with in-plane magnetization. The analytical expressions for critical current density are presented and the results are compared with those obtained from macrospin and micromagnetic simulation. It is found that the key performance indicators for in-plane SHE-RAM, including thermal stability and spin torque efficiency, are highly geometry dependent and can be effectively improved by geometric design.

  18. Experimental comparison of ring and diamond shaped planar Hall effect bridge magnetic field sensors

    DEFF Research Database (Denmark)

    Henriksen, Anders Dahl; Rizzi, Giovanni; Hansen, Mikkel Fougt

    2015-01-01

    sensors for negligible shape anisotropy. To experimentally validate this, we have fabricated both sensor geometries in the exchange-biased stack Ni80Fe20(tFM)/Cu(tCu)/ Mn80Ir20(10 nm) with tFM ¼ 10, 20, and 30 nm and tCu ¼ 0, 0.3, and 0.6 nm. Sensors from each stack were characterized by external magnetic......Planar Hall effect magnetic field sensors with ring and diamond shaped geometries are experimentally compared with respect to their magnetic field sensitivity and total signal variation. Theoretically, diamond shaped sensors are predicted to be 41% more sensitive than corresponding ring shaped...... improvement varied from 0% to 35% where the largest improvement was observed for sensor stacks with comparatively strong exchange bias. This is explained by the ring sensors being less affected by shape anisotropy than the diamond sensors. To study the effect of shape anisotropy, we also characterized sensors...

  19. MHD Flow with Hall Current and Ion-Slip Effects due to a Stretching Porous Disk

    Directory of Open Access Journals (Sweden)

    Faiza M. N. El-Fayez

    2013-01-01

    Full Text Available A partially ionized fluid is driven by a stretching disk, in the presence of a magnetic field that is strong enough to produce significant hall current and ion-slip effects. The limiting behavior of the flow is studied, as the magnetic field strength grows indefinitely. The flow variables are properly scaled, and uniformly valid asymptotic expansions of the velocity components are obtained. The leading order approximations show sinusoidal behavior that is decaying exponentially, as we move away from the disk surface. The two-term expansions of the radial and azimuthal surface shear stress components, as well as the far field inflow speed, compare well with the corresponding finite difference solutions, even at moderate magnetic fields. The effect of mass transfer (suction or injection through the disk is also considered.

  20. Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene

    Directory of Open Access Journals (Sweden)

    E. A. Henriksen

    2012-01-01

    Full Text Available The electronic structure of multilayer graphenes depends strongly on the number of layers as well as the stacking order. Here we explore the electronic transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect device configuration. We find both that the zero-magnetic-field transport and the quantum Hall effect at high magnetic fields are distinctly different from the monolayer and bilayer graphenes, and that they show electron-hole asymmetries that are strongly suggestive of a semimetallic band overlap. When the ABA trilayers are subjected to an electric field perpendicular to the sheet, Landau-level splittings due to a lifting of the valley degeneracy are clearly observed.

  1. Wireless power transfer exploring spin rectification and inverse spin Hall effects

    Science.gov (United States)

    Seeger, R. L.; Garcia, W. J. S.; Dugato, D. A.; da Silva, R. B.; Harres, A.

    2018-04-01

    Devices based on spin rectification effects are of great interest for broadband communication applications, since they allow the rectification of radio frequency signals by simple ferromagnetic materials. The phenomenon is enhanced at ferromagnetic resonance condition, which may be attained when an external magnetic field is applied. The necessity of such field, however, hinders technological applications. Exploring spin rectification and spin Hall effects in exchange-biased samples, we were able to rectify radio frequency signals without an external applied magnetic field. Direct voltages of the order of μV were obtained when Ta/NiFe/FeMn/Ta thin films were exposed to microwaves in a shorted microstrip line for a relatively broad frequency range. Connecting the films to a resistive load, we estimated the fraction of the incident radio frequency power converted into usable dc power.

  2. A variational theory of Hall effect of Anderson lattice model: Application to colossal magnetoresistance manganites (Re1-x Ax MnO3)

    Science.gov (United States)

    Panwar, Sunil; Kumar, Vijay; Singh, Ishwar

    2017-10-01

    An anomalous Hall constant RH has been observed in various rare earth manganites doped with alkaline earths namely Re1-xAxMnO3 (where Re = La, Pr, Nd etc., and A = Ca, Sr, Ba etc.) which exhibit colossal magnetoresistance (CMR), metal- insulator transition and many other poorly understood phenomena. We show that this phenomenon of anomalous Hall constant can be understood using two band (ℓ-b) Anderson lattice model Hamiltonian alongwith (ℓ-b) hybridization recently studied by us for manganites in the strong electron-lattice Jahn-Teller (JT) coupling regime an approach similar to the two - fluid models. We use a variational method in this work to study the temperature variation of Hall constant RH (T) in these compounds. We have already used this variational method to study the zero field electrical resistivity ρ (T) and magnetic susceptibility of doped CMR manganites. In the present study, we find that the Hall constant RH (T) reduces with increasing magnetic field parameters h&m and the metal-insulator transition temperature (Tρ) shifts towards higher temperature region. We have also observed the role of the model parameters e.g. local Coulomb repulsion U, Hund's rule coupling JH between eg spins and t2g spins, ferromagnetic nearest neighbor exchange coupling JF between t2g core spins and hybridization Vk between ℓ-polarons and d-electrons on Hall constant RH (T) of these materials at different magnetic fields. Here we find that RH (T) for a particular value of h and m shows a rapid initial increase, followed by a sharp peak at low temperature say 50 K in our case and a slow decrease at high temperatures, resembling with the key feature of many CMR compounds like La0.8Ba0.2 MnO3.The magnitude of RH (T) reduces and the anomaly (sharp peak) in RH becomes broader and shifts towards higher temperature region on increasing Vk or JH or doping x and even vanishes on further increasing these parameters. Our results of anomalous Hall constant (RH) have same

  3. Searches for clean anomalous gauge couplings effects at present and future e+e- colliders

    CERN Document Server

    Blondel, A; Trentadue, L G; Verzegnassi, Claudio

    1996-01-01

    We consider the virtual effects of a general type of Anomalous (triple) Gauge Couplings on various experimental observables in the process of electron-positron annihilation into a final fermion-antifermion state. We show that the use of a recently proposed "Z-peak subtracted" theoretical description of the process allows to reduce substantially the number of relevant parameters of the model, so that a calculation of observability limits can be performed in a rather simple way. As an illustration of our approach, we discuss the cases of future measurements at LEP2 and at a new 500 GeV linear collider.

  4. Improved derivation of the modified BGK collision term and applications to the Hall effect and cold plasma dispersion relation

    International Nuclear Information System (INIS)

    Nagata, M.

    1983-01-01

    A derived addition to the BGK collision term,is improved and expressed in simple form. The collision frequency for scattering depends anisotropically on the velocity vector. The improved macroscopic equation of momentum flow is applied to the Hall effect, the cold plasma dispersion relation and the cyclotron resonance. The Hall coefficient which is constant in the case of the BGK collision term now depends on the magnetic field. It is also shown that, compared with the almost symmetric classical curves of cyclotron resonance, the new curves are considerably asymmetric and their half-widths are about 3/2 times the classical ones. (autho)

  5. Quantifying the chiral magnetic effect from anomalous-viscous fluid dynamics

    Science.gov (United States)

    Jiang, Yin; Shi, Shuzhe; Yin, Yi; Liao, Jinfeng

    2018-01-01

    The Chiral Magnetic Effect (CME) is a macroscopic manifestation of fundamental chiral anomaly in a many-body system of chiral fermions, and emerges as an anomalous transport current in the fluid dynamics framework. Experimental observation of the CME is of great interest and has been reported in Dirac and Weyl semimetals. Significant efforts have also been made to look for the CME in heavy ion collisions. Critically needed for such a search is the theoretical prediction for the CME signal. In this paper we report a first quantitative modeling framework, Anomalous Viscous Fluid Dynamics (AVFD), which computes the evolution of fermion currents on top of realistic bulk evolution in heavy ion collisions and simultaneously accounts for both anomalous and normal viscous transport effects. AVFD allows a quantitative understanding of the generation and evolution of CME-induced charge separation during the hydrodynamic stage, as well as its dependence on theoretical ingredients. With reasonable estimates of key parameters, the AVFD simulations provide the first phenomenologically successful explanation of the measured signal in 200 AGeV AuAu collisions. This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Nuclear Physics, within the framework of the Beam Energy Scan Theory (BEST) Topical Collaboration. The work is also supported in part by the National Science Foundation under Grant No. PHY-1352368 (SS and JL), by the National Science Foundation of China under Grant No. 11735007 (JL) and by the U.S. Department of Energy under grant Contract Number No. DE- SC0012704 (BNL)/DE-SC0011090 (MIT) (YY). JL is grateful to the Institute for Nuclear Theory for hospitality during the INT-16-3 Program. The computation of this research was performed on IU’s Big Red II cluster, supported in part by Lilly Endowment, Inc. (through its support for the Indiana University Pervasive Technology Institute) and in part by the Indiana METACyt

  6. Hall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor

    KAUST Repository

    Sun, Jian

    2012-06-06

    An extraordinary magnetoresistance (EMR) device with a 3-contact geometry has been fabricated and characterized. A large enhancement of the output sensitivity at low magnetic fields compared to the conventional EMR device has been found, which can be attributed to an additional influence coming from the Hall effect. Output sensitivities of 0.19 mV/T at zero-field and 0.2 mV/T at 0.01 T have been measured in the device, which is equivalent to the ones of the conventional EMR sensors with a bias of ∼0.04 T. The exceptional performance of EMR sensors in the high field region is maintained in the 3-contact device.

  7. Enhanced spin Hall effect of tunneling light in hyperbolic metamaterial waveguide.

    Science.gov (United States)

    Tang, Tingting; Li, Chaoyang; Luo, Li

    2016-08-01

    Giant enhancement of spin Hall effect of tunneling light (SHETL) is theoretically proposed in a frustrated total internal reflection (FTIR) structure with hyperbolic metamaterial (HMM). We calculate the transverse shift of right-circularly polarized light in a SiO2-air-HMM-air-SiO2 waveguide and analyze the physical mechanism of the enhanced SHETL. The HMM anisotropy can greatly increase the transverse shift of polarized light even though HMM loss might reduce it. Compared with transverse shift of transmitted light through a single HMM slab with ZnAlO/ZnO multilayer, the maximum transverse shift of tunneling light through a FTIR structure with identical HMM can be significantly enlarged by more than three times which reaches -38 μm without any amplification method.

  8. Measurements of secondary electron emission effects in the Hall thruster discharge

    International Nuclear Information System (INIS)

    Raitses, Y.; Smirnov, A.; Staack, D.; Fisch, N.J.

    2006-01-01

    The dependence of the maximum electron temperature on the discharge voltage is studied for two Hall thruster configurations, in which a collisionless plasma is bounded by channel walls made of materials with different secondary electron emission (SEE) properties. The linear growth of the temperature with the discharge voltage, observed in the channel with a low SEE yield, suggests that SEE is responsible for the electron temperature saturation in the thruster configuration with the channel walls having a higher SEE yield. The fact that the values of the electron temperature at saturation are rather high may indirectly support the recently predicted kinetic regime of the space charge saturation of the near-wall sheath in the thruster discharge. A correlation between the effects of the channel wall material on the electron temperature and the electron cross-field current was also observed

  9. Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal

    Science.gov (United States)

    Wu, Sanfeng; Fatemi, Valla; Gibson, Quinn D.; Watanabe, Kenji; Taniguchi, Takashi; Cava, Robert J.; Jarillo-Herrero, Pablo

    2018-01-01

    A variety of monolayer crystals have been proposed to be two-dimensional topological insulators exhibiting the quantum spin Hall effect (QSHE), possibly even at high temperatures. Here we report the observation of the QSHE in monolayer tungsten ditelluride (WTe2) at temperatures up to 100 kelvin. In the short-edge limit, the monolayer exhibits the hallmark transport conductance, ~e2/h per edge, where e is the electron charge and h is Planck’s constant. Moreover, a magnetic field suppresses the conductance, and the observed Zeeman-type gap indicates the existence of a Kramers degenerate point and the importance of time-reversal symmetry for protection from elastic backscattering. Our results establish the QSHE at temperatures much higher than in semiconductor heterostructures and allow for exploring topological phases in atomically thin crystals.

  10. Microbeads detection using Planar Hall effect in spin-valve structure

    International Nuclear Information System (INIS)

    Thanh, N.T.; Kim, K.W.; Kim, C.O.; Shin, K.H.; Kim, C.G.

    2007-01-01

    The Planar Hall effect in a spin-valve structure of Ta/NiFe/CoFe/Cu/CoFe/IrMn/Ta has been applied as a biosensor being capable of detecting Dynabeads ( R) M-280. The patterns with a size of 50x100μm 2 were prepared by lithography methods, and the biosensor performance was tested under the application of a DC magnetic field where the output signals were obtained from a nanovoltmeter. The sensor signal has produced high sensitivity results; especially, the real-time profiles revealed stable and significant signals at external applied magnetic field of around 7.0Oe with the resolution of 0.04 beads per μm 2 . With these results, it could be feasible to detect some commercial Dynabeads ( R) M-280 which can be used for recognition force and biomolecular interaction measurements

  11. Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal.

    Science.gov (United States)

    Wu, Sanfeng; Fatemi, Valla; Gibson, Quinn D; Watanabe, Kenji; Taniguchi, Takashi; Cava, Robert J; Jarillo-Herrero, Pablo

    2018-01-05

    A variety of monolayer crystals have been proposed to be two-dimensional topological insulators exhibiting the quantum spin Hall effect (QSHE), possibly even at high temperatures. Here we report the observation of the QSHE in monolayer tungsten ditelluride (WTe 2 ) at temperatures up to 100 kelvin. In the short-edge limit, the monolayer exhibits the hallmark transport conductance, ~ e 2 / h per edge, where e is the electron charge and h is Planck's constant. Moreover, a magnetic field suppresses the conductance, and the observed Zeeman-type gap indicates the existence of a Kramers degenerate point and the importance of time-reversal symmetry for protection from elastic backscattering. Our results establish the QSHE at temperatures much higher than in semiconductor heterostructures and allow for exploring topological phases in atomically thin crystals. Copyright © 2018, American Association for the Advancement of Science.

  12. The Hall-Rodriguez theory of latent inhibition: Further assessment of compound stimulus preexposure effects.

    Science.gov (United States)

    Rodríguez, Gabriel; Márquez, Raúl; Gil, Marta; Alonso, Gumersinda; Hall, Geoffrey

    2014-10-01

    According to a recent theory (Hall & Rodriguez, 2010), the latent inhibition produced by nonreinforced exposure to a target stimulus (B) will be deepened by subsequent exposure of that stimulus in compound with another (AB). This effect of compound exposure is taken to depend on the addition of a novel A to the familiar B and is not predicted for equivalent preexposure on which AB trials precede the A trials. This prediction was tested in 2 experiments using rats. Experiment 1 used an aversive procedure with flavors as the stimuli; Experiment 2 used an appetitive procedure with visual and auditory stimuli. In both, we found that conditioning with B as the conditioned stimulus proceeded more slowly (i.e., latent inhibition was greater) in subjects given the B-AB sequence in preexposure than in subjects given the AB-B sequence.

  13. Particle-hole symmetry for composite fermions: An emergent symmetry in the fractional quantum Hall effect

    DEFF Research Database (Denmark)

    Coimbatore Balram, Ajit; Jain, Jainendra

    2017-01-01

    The particle-hole (PH) symmetry of {\\em electrons} is an exact symmetry of the electronic Hamiltonian confined to a specific Landau level, and its interplay with the formation of composite fermions has attracted much attention of late. This article investigates an emergent symmetry in the fractio......The particle-hole (PH) symmetry of {\\em electrons} is an exact symmetry of the electronic Hamiltonian confined to a specific Landau level, and its interplay with the formation of composite fermions has attracted much attention of late. This article investigates an emergent symmetry...... in the fractional quantum Hall effect, namely the PH symmetry of {\\em composite fermions}, which relates states at composite fermion filling factors $\

  14. Spin-dependent Hall effect in degenerate semiconductors: a theoretical study

    Energy Technology Data Exchange (ETDEWEB)

    Idrish Miah, M [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia)], E-mail: m.miah@griffith.edu.au

    2008-10-15

    The spin-dependent Hall (SDH) effect in degenerate semiconductors is investigated theoretically. Starting from a two-component drift-diffusion equation, an expression for SDH voltage (V{sub SDH}) is derived, and drift and diffusive contributions to V{sub SDH} are studied. For the possible enhancement of the diffusive part, degenerate and nondegenerate cases are examined. We find that due to an increase in the diffusion coefficient V{sub SDH} increases in a degenerate semiconductor, consistent with the experimental observations. The expression for V{sub SDH} is reduced in three limiting cases, namely diffusive, drift-diffusion crossover and drift, and is analysed. The results agree with those obtained in recent theoretical investigations.

  15. Compact High Current Rare-Earth Emitter Hollow Cathode for Hall Effect Thrusters

    Science.gov (United States)

    Hofer, Richard R. (Inventor); Goebel, Dan M. (Inventor); Watkins, Ronnie M. (Inventor)

    2012-01-01

    An apparatus and method for achieving an efficient central cathode in a Hall effect thruster is disclosed. A hollow insert disposed inside the end of a hollow conductive cathode comprises a rare-earth element and energized to emit electrons from an inner surface. The cathode employs an end opening having an area at least as large as the internal cross sectional area of the rare earth insert to enhance throughput from the cathode end. In addition, the cathode employs a high aspect ratio geometry based on the cathode length to width which mitigates heat transfer from the end. A gas flow through the cathode and insert may be impinged by the emitted electrons to yield a plasma. One or more optional auxiliary gas feeds may also be employed between the cathode and keeper wall and external to the keeper near the outlet.

  16. Nonthermal fusion reactor concept based on Hall-effect magnetohydrodynamics plasma theory

    International Nuclear Information System (INIS)

    Witalis, E.A.

    1988-01-01

    The failure of magnetic confinement controlled thermonuclear fusion research to achieve its goal is attributed to its foundation on the incomplete MHD plasma description instead of the more general HMHD (Hall-effect magnetohydrodynamics) theory. The latter allows for a certain magnetic plasma self-confinement under described stringent conditions. A reactor concept based on the formation, acceleration, and forced disintegration of magnetized whirl structures, plasmoids, is proposed. The four conventional MHD theory objections, i.e., absence of dynamo action, fast decay caused by resistivity, non-existence of magnetic self-confinement, and negligible non-thermal fusion yield, are shown not to apply. Support for the scheme from dense plasma focus research is pointed out. (orig.) [de

  17. Scanning nuclear electric resonance microscopy using quantum-Hall-effect breakdown

    Energy Technology Data Exchange (ETDEWEB)

    Hashimoto, K., E-mail: hashi@m.tohoku.ac.jp; Tomimatsu, T.; Shirai, S.; Taninaka, S.; Nagase, K.; Sato, K.; Hirayama, Y. [Graduate School of Sciences, Tohoku University, Sendai 980-8578 (Japan)

    2016-07-15

    We present a scanning nuclear-spin resonance (NSR) method that incorporates resistive detection with electric-field induced NSR locally excited by a scanning metallic probe. In the quantum-Hall effect breakdown regime, NSR intensity mapping at both the fundamental NSR frequency f{sub 75As} and twice the frequency 2f{sub 75As} demonstrates the capability to probe the distribution of nuclear polarization, particularly in a semiconductor quantum well. We find that f{sub 75As} NSR excitation drives not only local NSR but also spatially overlapped nonlocal NSR, which suppresses the maximum intensity of local NSR, while the 2f{sub 75As} NSR yields purely local excitation conferring a larger intensity.

  18. Copenhagen's single system premise prevents a unified view of integer and fractional quantum Hall effect

    CERN Document Server

    Post, E J

    1999-01-01

    This essay presents conclusive evidence of the impermissibility of Copenhagen's single system interpretation of the Schroedinger process. The latter needs to be viewed as a tool exclusively describing phase and orientation randomized ensembles and is not be used for isolated single systems. Asymptotic closeness of single system and ensemble behavior and the rare nature of true single system manifestations have prevented a definitive identification of this Copenhagen deficiency over the past three quarter century. Quantum uncertainty so becomes a basic trade mark of phase and orientation disordered ensembles. The ensuing void of usable single system tools opens a new inquiry for tools without statistical connotations. Three, in part already known, period integrals here identified as flux, charge and action counters emerge as diffeo-4 invariant tools fully compatible with the demands of the general theory of relativity. The discovery of the quantum Hall effect has been instrumental in forcing a distinction betw...

  19. Quantum spin Hall effect in a transition metal oxide Na.sub.2./sub.IrO.sub.3./sub

    Czech Academy of Sciences Publication Activity Database

    Shitade, A.; Katsura, H.; Kuneš, Jan; Qi, X.-L.; Zhang, S.-Ch.; Nagaosa, N.

    2009-01-01

    Roč. 102, č. 25 (2009), 256403/1-256403/4 ISSN 0031-9007 Institutional research plan: CEZ:AV0Z10100521 Keywords : quantum spin Hall effect * spin-orbit coupling * topological insulator Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.328, year: 2009

  20. Reversible and irreversible temperature-induced changes in exchange-biased planar Hall effect bridge (PHEB) magnetic field sensors

    DEFF Research Database (Denmark)

    Rizzi, G.; Lundtoft, N.C.; Østerberg, F.W.

    2012-01-01

    We investigate the changes of planar Hall effect bridge magnetic field sensors upon exposure to temperatures between 25° C and 90°C. From analyses of the sensor response vs. magnetic fields we extract the exchange bias field Hex, the uniaxial anisotropy field HK and the anisotropic magnetoresista...

  1. Detection and quantification of inverse spin Hall effect from spin pumping in permalloy/normal metal bilayers

    NARCIS (Netherlands)

    Mosendz, O.; Vlaminck, V.; Pearson, J.E.; Fradin, F.Y.; Bauer, G.E.W.; Bader, S.D.; Hoffmann, A.

    2010-01-01

    Spin pumping is a mechanism that generates spin currents from ferromagnetic resonance over macroscopic interfacial areas, thereby enabling sensitive detection of the inverse spin Hall effect that transforms spin into charge currents in nonmagnetic conductors. Here we study the spin-pumping-induced

  2. Effect of default menus on food selection and consumption in a college dining hall simulation study.

    Science.gov (United States)

    Radnitz, Cynthia; Loeb, Katharine L; Keller, Kathleen L; Boutelle, Kerri; Schwartz, Marlene B; Todd, Lauren; Marcus, Sue

    2018-05-01

    To test an obesity prevention strategy derived from behavioural economics (optimal defaults plus delay), focused on changing the college dining hall service method. After a uniform pre-load, participants attended an experimental lunch in groups randomized to one of three conditions: a nutrient-dense, lower-fat/energy lunch as an optimal default (OD); a less-nutrient-dense, higher-fat/energy lunch as a suboptimal default (SD); or a free array (FA) lunch. In the OD condition, students were presented a menu depicting healthier vegetarian and omnivore foods as default, with opt-out alternatives (SD menu) available on request with a 15 min wait. In the SD condition, the same menu format was used with the positioning of food items switched. In the FA condition, all choices were presented in uniform fonts and were available immediately. Private rooms designed to provide a small version of a college dining hall, on two campuses of a Northeastern US university. First-year college students (n 129). There was a significant main effect for condition on percentage of optimal choices selected, with 94 % of food choices in the OD condition optimal, 47 % in the FA condition optimal and none in the SD condition optimal. Similarly, energy intake for those in the SD condition significantly exceeded that in the FA condition, which exceeded that in the OD condition. Presenting menu items as optimal defaults with a delay had a significant impact on choice and consumption, suggesting that further research into its long-term applicability is warranted.

  3. The Hall-induced stability of gravitating fluids

    Science.gov (United States)

    Karmakar, P. K.; Goutam, H. P.

    2018-05-01

    We analyze the stability behavior of low-density partially ionized self-gravitating magnetized unbounded dusty plasma fluid in the presence of the Hall diffusion effects (HDEs) in the non-ideal magnetohydrodynamic (MHD) equilibrium framework. The effects of inhomogeneous self-gravity are methodically included in the basic model tapestry. Application of the Fourier plane-wave perturbative treatment decouples the structuration representative parameters into a linear generalized dispersion relation (sextic) in a judicious mean-fluid approximation. The dispersion analysis shows that the normal mode, termed as the gravito-magneto-acoustic (GMA) mode, is drastically modified due to the HDEs. This mode is highly dispersive, and driven unstable by the Hall current resulting from the symmetry-breaking of electrons and ions relative to the magnetic field. The mode feature, which is derived from a modified induction with the positive Hall, is against the ideal MHD. It is further demonstrated that the HDEs play stabilizing roles by supporting the cloud against gravitational collapse. Provided that the HDEs are concurrently switched off, the collapse occurs on the global spatial scale due to enhanced inward accretion of the gravitating dust constituents. It is seen explicitly that the enhanced dust-charge leads to stabilizing effects. Besides, the Hall-induced fluctuations, as propagatory wave modes, exhibit both normal and anomalous dispersions. The reliability checkup of the entailed results as diverse corollaries and special cases are illustratively discussed in the panoptic light of the earlier paradigmatic predictions available in the literature.

  4. Landau level broadening without disorder, non-integer plateaus without interactions- an alternative model of the quantum Hall effect

    International Nuclear Information System (INIS)

    Kramer, T.

    2006-01-01

    I review some aspects of an alternative model of the quantum Hall effect, which is not based on the presence of disorder potentials. Instead, a quantization of the electronic drift current in the presence of crossed electric and magnetic fields is employed to construct a non-linear transport theory. Another important ingredient of the alternative theory is the coupling of the two-dimensional electron gas to the leads and the applied voltages. By working in a picture where the external voltages fix the chemical potential in the 2D subsystem, the experimentally observed linear relation between the voltage and the location of the quantum Hall plateaus finds an natural explanation. Also, the classical Hall effect emerges as a natural limit of the quantum Hall effect. For low temperatures (or high currents), a non-integer substructure splits higher Landau levels into sublevels. The appearance of substructure and non-integer plateaus in the resistivity is not linked to electron-electron interactions, but caused by the presence of a (linear) electric field. Some of the resulting fractions correspond exactly to half-integer plateaus. (Author)

  5. MHD Mixed Convection Flow in a Rotating Channel in the Presence of an Inclined Magnetic Field with the Hall Effect

    Science.gov (United States)

    Mishra, A.; Sharma, B. K.

    2017-11-01

    A numerical study of an oscillatory unsteady MHD flow and heat and mass transfer in a vertical rotating channel with an inclined uniform magnetic field and the Hall effect is carried out. The conservation equations of momentum, energy, and species are formulated in a rotating frame of reference with inclusion of the buoyancy effects and Lorentz forces. The Lorentz forces are determined by using the generalized Ohm law with the Hall parameter taken into account. The obtained coupled partial differential equations are nondimensionalized and solved numerically by using the explicit finite difference method. The effects of various model parameters, like the Hall parameter, Hartmann number, wall suction/injection parameter, rotation parameter, angle of magnetic field inclination, Prandtl number, Schmidt number, etc., on the channel velocities, skin friction coefficients, Nusselt number, and the Sherwood number are examined. It is found that the influence of the Hartmann number and Hall parameter on the channel velocities and skin friction coefficients is dependent on the value of the wall suction/injection parameter.

  6. [Effects of an elder health promotion program using the strategy of elder health leader training in senior citizen halls].

    Science.gov (United States)

    Gu, Mee Ock; Eun, Young; Kim, Eun Sim; Ahn, Hwang Ran; Kwon, In Soo; Oh, Hyun Sook; Kang, Young-Sil; Jung, Myun Sook; Choi, So Young; Sung, Kyung Mi; Kang, Hye Yeon

    2012-02-01

    This study was conducted to develop and test the effects of an elder health promotion program and apply strategies for elder health leader training sessions with elders at senior citizen halls. A nonequivalent control group pretest-posttest design was used. Participants were 49 elders at a senior citizen hall (intervention: 27, control: 22). The elder health promotion program consisted of health education and exercise. A professional leader led the program for 4 weeks, and then an elder health leader and research assistant led for 8 weeks (total 12 weeks). Scales for elder health promoting behaviors, perceived health status, life satisfaction and senior citizen hall capability were used and physical fitness levels were measured. Data were collected between April 21 and July 28, 2010 and analyzed using Chi-square, Fisher's exact test, t-test, and repeated measure ANOVA with SPSS/WIN 12.0. Health promoting behaviors, physical fitness, perceived health status, and senior citizen hall capacity were significantly better in the experimental group after the intervention compared to the control group. Study findings indicate that elder health promotion programs applying strategies of elder health leader training are effective and can be recommended as nursing interventions for health promotion of these elders.

  7. Nuclear spin Hall and Klein tunneling effects during oxidation with electric and magnetic field inductions in graphene.

    Science.gov (United States)

    Little, Reginald B; McClary, Felicia; Rice, Bria; Jackman, Corine; Mitchell, James W

    2012-12-14

    The recent observation of the explosive oxidation of graphene with enhancement for decreasing temperature and the requirements for synchronizing oxidants for collective oxidation-reduction (redox) reactions presented a chemical scenario for the thermal harvesting by the magnetic spin Hall Effect. More experimental data are presented to demonstrate such spin Hall Effect by determining the influence of spins of so-called spectator fermionic cations. Furthermore, the so-called spectator bosonic cations are discovered to cause a Klein tunneling effect during the redox reaction of graphene. The Na(+) and K(+), fermionic cations and the Mg(2+) and Ca(2+), bosonic cations were observed and compared under a variety of experimental conditions: adiabatic reactions with initial temperatures (18-22 °C); reactions toward infinite dilution; isothermal reactions under nonadiabatic conditions at low temperature of 18 °C; reactions under paramagnetic O(2) or diamagnetic N(2) atmospheres of different permeabilities; reactions in applied and no applied external magnetic field; and reactions toward excess concentrations of common and uncommon Na(+) and Mg(2+) cations. The observed reaction kinetics and dynamics under these various, diverse conditions are consistent with the spin Hall mechanism, energy harvesting and short time violation of Second Law of Thermodynamics for redox reactions of graphene by the Na(+)K(+) mixture and are consistent with the Klein tunnel mechanism for the redox reactions of graphene by the Mg(2+)Ca(2+) mixture. Mixed spin Hall and Klein tunnel mechanisms are discovered to slow and modulate explosive redox reactions. Such spin Hall Effect also gives explanation of recent tunneling of electrons through boron nitride.

  8. Fractional Quantum Hall Effects in Graphene on a h-BN Substrate

    Science.gov (United States)

    Yonaga, Kouki; Shibata, Naokazu

    2018-03-01

    Fractional quantum Hall (FQH) effects in graphene are studied because of their relativistic characteristics and the valley degree of freedom. Recently FQH effects have been observed at various filling factors with graphene on a hexagonal boron nitride (h-BN) substrate. However, it is known that h-BN creates the mass term in the Dirac Hamiltonian that acts as the effective model of graphene. To understand recent experiments, we shall investigate many-body effects in the massive Dirac electron system. In this paper, we study the mass-term effects on the FQH states of Dirac electrons by exact diagonalization. We examine the ground state at filling factor 1/3 in the n = ±1 Landau level. Without the mass term, the ground state in the Laughlin state featuring valley degeneracy and the lowest excitation is characterized by the valley unpolarized state (known as the valley skyrmion state). Conversely, we find that the mass-term lifts the valley degeneracy due to the breaking of the inversion symmetry. We also demonstrate that the valley unpolarized excitation is suppressed and that the fully or partially polarized state appears in the lowest excitation by increasing the mass term. Finally, we discuss the stability of FQH states in the massive Dirac Hamiltonian in experimental situations. We find that our numerical results are in agreement with previous experimental results.

  9. The Hall effect in the organic conductor TTF–TCNQ: choice of geometry for accurate measurements of a highly anisotropic system

    DEFF Research Database (Denmark)

    Tafra, E; Čulo, M; Basletić, M

    2012-01-01

    We have measured the Hall effect on recently synthesized single crystals of the quasi-one-dimensional organic conductor TTF–TCNQ (tetrathiafulvalene–tetracyanoquinodimethane), a well known charge transfer complex that has two kinds of conductive stacks: the donor (TTF) and the acceptor (TCNQ...... Hall effect measurements. Our results show, contrary to past belief, that the Hall coefficient does not depend on the geometry of measurements and that the Hall coefficient value is approximately zero in the high temperature region (T > 150 K), implying that there is no dominance of either the TTF...... or the TCNQ chain. At lower temperatures our measurements clearly prove that all three phase transitions of TTF–TCNQ could be identified from Hall effect measurements....

  10. Direct construction of the effective action of chiral gauge fermions in the anomalous sector

    International Nuclear Information System (INIS)

    Salcedo, L.L.

    2009-01-01

    The anomaly implies an obstruction to a fully chiral covariant calculation of the effective action in the abnormal-parity sector of chiral theories. The standard approach then is to reconstruct the anomalous effective action from its covariant current. In this work, we use a recently introduced formulation which allows one to directly construct the non-trivial chiral invariant part of the effective action within a fully covariant formalism. To this end we develop an appropriate version of Chan's approach to carry out the calculation within the derivative expansion. The result to four derivatives, i.e., to leading order in two and four dimensions and next-to-leading order in two dimensions, is explicitly worked out. Fairly compact expressions are found for these terms. (orig.)

  11. Field-controllable Spin-Hall Effect of Light in Optical Crystals: A Conoscopic Mueller Matrix Analysis

    OpenAIRE

    Samlan, C. T.; Viswanathan, Nirmal K.

    2018-01-01

    Electric-field applied perpendicular to the direction of propagation of paraxial beam through an optical crystal dynamically modifies the spin-orbit interaction (SOI), leading to the demonstration of controllable spin-Hall effect of light (SHEL). The electro- and piezo-optic effects of the crystal modifies the radially symmetric spatial variation in the fast-axis orientation of the crystal, resulting in a complex pattern with different topologies due to the symmetry-breaking effect of the app...

  12. Structure investigation of metal ions clustering in dehydrated gel using x-ray anomalous dispersion effect

    CERN Document Server

    Soejima, Y; Sugiyama, M; Annaka, M; Nakamura, A; Hiramatsu, N; Hara, K

    2003-01-01

    The structure of copper ion clusters in dehydrated N-isopropylacrylamide/sodium acrylate (NIPA/SA) gel has been studied by means of small angle X-ray scattering (SAXS) method. In order to distinguish the intensity scattered by Cu ions, the X-ray anomalous dispersion effect around the Cu K absorption edge has been coupled with SAXS. It is found that the dispersion effect dependent on the incident X-ray energy is remarkable only at the momentum transfer q = 0.031 A sup - sup 1 , where a SAXS peak is observed. The results indicate that copper ions form clusters in the dehydrated gel, and that the mean size of clusters is the same as that of SA clusters produced by microphase separation. It is therefore naturally presumed that copper ions are adsorbed into the SA molecules. On the basis of the presumption, a mechanism is proposed for microphase-separation and clustering of Cu ions.

  13. Resonant optical tunneling-induced enhancement of the photonic spin Hall effect

    Science.gov (United States)

    Jiang, Xing; Wang, Qingkai; Guo, Jun; Zhang, Jin; Chen, Shuqing; Dai, Xiaoyu; Xiang, Yuanjiang

    2018-04-01

    Due to the quantum analogy with optics, the resonant optical tunneling effect (ROTE) has been proposed to investigate both the fundamental physics and the practical applications of optical switches and liquid refractive index sensors. In this paper, the ROTE is used to enhance the spin Hall effect (SHE) of transmitted light. It is demonstrated that sandwiching a layer of a high-refractive-index medium (boron nitride crystal) between two low-refractive-index layers (silica) can effectively enhance the photonic SHE due to the increased refractive index gradient and an enhanced evanescent field near the interface between silica and boron nitride. A maximum transverse shift of the horizontal polarization state in the ROTE structure of about 22.25 µm has been obtained, which is at least three orders of magnitude greater than the transverse shift in the frustrated total internal reflection structure. Moreover, the SHE can be manipulated by controlling the component materials and the thickness of the ROTE structure. These findings open the possibility for future applications of photonic SHE in precision metrology and spin-based photonics.

  14. Dynamical scaling analysis of the optical Hall conductivity in the graphene quantum Hall system with various types of disorder

    International Nuclear Information System (INIS)

    Morimoto, Takahiro; Aoki, Hideo; Avishai, Yshai

    2011-01-01

    Dynamical scaling of the optical Hall conductivity σ xy (ε F , ω) at the n = 0 Landau level in graphene is analyzed for the 2D effective Dirac fermion and honeycomb lattice models with various types of disorder. In the Dirac fermion model with potential disorder, σ xy (ε F , ω) obeys a well-defined dynamical scaling, characterized by the localization exponent ν and the dynamical critical exponent z. In sharp distinction, scaling behavior of σ xy (ε F , ω) in the honeycomb lattice model with bond disorder (preserving chiral symmetry), becomes anomalous.

  15. Large magnetoresistance and Hall effect in paramagnetic black phosphorus synthesized from red phosphorus

    Science.gov (United States)

    Jiang, X. H.; Xiong, F.; Zhang, X. W.; Hua, Z. H.; Wang, Z. H.; Yang, S. G.

    2018-05-01

    Black phosphorus (BP) is an important material, which can be used in the fabrication of phosphorene. In this manuscript, a systematic study was described on the high-pressure synthesis of BP from red phosphorus. For physical characterization, the bulk BP was synthesized under the high pressure of 1.6 GPa and high temperature of 700 °C for 2 h. X-ray diffraction and Raman studies illustrated the formation of high-quality pure phase pleomorphic BP. A nonlinear Hall effect was observed in the BP sample. Magnetoresistance (MR) in the bulk BP reached 90% at 40 K, and positive-to-negative crossover in MR was measured. A paramagnetic feature was found in the prepared bulk BP, and the MR results were attributed to the combination of the effect of classical resistor network and magnetic polaron. The conduction tensors were analyzed by a two-band model to determine the carrier concentration and mobility at several temperatures.

  16. Magnetic skyrmions without the skyrmion Hall effect in a magnetic nanotrack with perpendicular anisotropy.

    Science.gov (United States)

    Zhang, Yue; Luo, Shijiang; Yan, Baiqian; Ou-Yang, Jun; Yang, Xiaofei; Chen, Shi; Zhu, Benpeng; You, Long

    2017-07-27

    Magnetic skyrmions have potential applications in novel information devices with excellent energy efficiency. However, the skyrmion Hall effect (SkHE) could cause skyrmions moving in a nanotrack to get annihilated at the track edge. In this work, we discovered that the SkHE is depressed by modifying the magnetic structure at the edge of a track, and thus the skyrmion can move in almost a straight line at a high speed. Unlike the inner part of a track with perpendicular magnetic anisotropy, the edge layer exhibits in-plane magnetic anisotropy, and the orientation of edge moments is opposite that at the perimeter of skyrmions nearby. As a result, an enhanced repulsive force acts on the skyrmion to oppose the Magnus force that causes the SkHE. Additionally, the Dzyaloshinskii-Moriya interaction (DMI) constant of the edge layer also matters. When there is no DMI at the edge layer, the transverse displacement of the skyrmion can be depressed effectively when the width of the edge layer is sufficiently large. However, when the inner part and the edge share the same DMI constant, non-monotonically varied transverse displacement occurs because of the Néel-wall-like structure at the edge layer.

  17. Fractional Quantum Hall Effects with Bose-gases in Rotating Optical Lattice Potentials

    Science.gov (United States)

    Gemelke, Nathan; Sarajlic, Edina; Chu, Steven

    2008-05-01

    It has previously been noted that an analog to the fractional quantum-Hall (FQH) effect for two-dimensional electron gases can be produced with harmonically trapped and rotating neutral atoms. We report progress investigating FQH-like effects in the centrifugal limit of small, rotating, two-dimensional Bose gases. An ensemble of such systems is prepared in an optical lattice with locally rotating on-site potentials, produced by manipulation only of lattice beam optical phases. The non- rotating few-atom ground states are adiabatically transformed to higher angular momentum by applying a time-dependent sweep of rotation rate and deformation of the local lattice potential. Near the centrifugal limit, where the trap rotates at its vibration frequency, correlation is expected as a result of collisions. The onset of this behavior is probed by a combination of photoassociative transitions to bound molecules, and careful analysis of time-of-flight momentum distributions of atoms suddenly released from the lattice.

  18. Quantum Hall effect in InAs/AlSb double quantum well

    International Nuclear Information System (INIS)

    Yakunin, M.V.; Podgornykh, S.M.; Sadof'ev, Yu.G.

    2009-01-01

    Double quantum wells (DQWs) were first implemented in the InAs/AlSb heterosystem, which is characterized by a large Lande g factor |g|=15 of the InAs layers forming the well, much larger than the bulk g factor |g|=0.4 of the GaAs in conventional GaAs/AlGaAs DQWs. The quality of the samples is good enough to permit observation of a clear picture of the quantum Hall effect (QHE). Despite the small tunneling gap, which is due to the large barrier height (1.4 eV), features with odd filling factors ν=3,5,7, ... are present in the QHE, due to collectivized interlayer states of the DQW. When the field is rotated relative to the normal to the layers, the ν=3 state is suppressed, confirming the collectivized nature of that state and denying that it could owe its existence to a strong asymmetry of the DQW. Previously the destruction of the collectivized QHE states by a parallel field had been observed only for the ν=1 state. The observation of a similar effect for ν=3 in an InAs/AlSb DQW may be due to the large bulk g factor of InAs

  19. Anomalous dispersion effects in the IR-ATR spectroscopy of water

    Energy Technology Data Exchange (ETDEWEB)

    Hancer, Mehmet [Department of Metallurgical Engineering, 412 William C. Browning Building, University of Utah, Salt Lake City, Utah 84112 (United States); Sperline, Roger P. [4600 N. Ave. del Cazador, Tucson, Arizona 85718 (United States); Miller, Jan D. [Department of Metallurgical Engineering, 412 William C. Browning Building, University of Utah, Salt Lake City, Utah 84112 (United States)

    2000-01-01

    The distortion of band shapes seen in infrared attenuated total reflection (IR-ATR) spectroscopy of strongly absorbing materials such as water, relative to transmission sampling, is shown here to be due to the anomalous dispersion (AD) of water. This distortion occurs in addition to the normal 1/{nu} dependence, and, contrary to previous reports, is shown to not be due to chemical changes of water at the interface between the optical element and bulk solution. IR-ATR spectra of water were modeled with approximation-free calculations. The modeled spectra are compared with experimental ATR spectra for different internal reflection elements, and the results are discussed in terms of the AD optical effect. (c) 2000 Society for Applied Spectroscopy.

  20. Investigation of surface resistance of copper in classical and anomalous skin-effect region

    International Nuclear Information System (INIS)

    Kutovoj, V.A.; Egorov, A.M.

    2008-01-01

    The surface resistance of copper in classical and anomalous skin-effect region has been investigated, and the surface resistance improvement factor equal to the ratio of the surface resistance of copper at room temperature to that of helium temperature, depending on the electromagnetic field frequency, has been determined. The improvement factor has been shown to have inverse power law dependence on frequency. The frequencies at which the improvement factor of copper equals 10 have been determined. It has been found that the quality factor of a resonance high-frequency system made of copper, operating at temperature T ≥ 4.2 K can be increased 10 times or more as against a quality factor of a resonance high-frequency system operating at room temperature

  1. Anomalous Brownian motion of colloidal particle in a nematic environment: effect of the director fluctuations

    Directory of Open Access Journals (Sweden)

    T. Turiv

    2015-06-01

    Full Text Available As recently reported [Turiv T. et al., Science, 2013, Vol. 342, 1351], fluctuations in the orientation of the liquid crystal (LC director can transfer momentum from the LC to a colloid, such that the diffusion of the colloid becomes anomalous on a short time scale. Using video microscopy and single particle tracking, we investigate random thermal motion of colloidal particles in a nematic liquid crystal for the time scales shorter than the expected time of director fluctuations. At long times, compared to the characteristic time of the nematic director relaxation we observe typical anisotropic Brownian motion with the mean square displacement (MSD linear in time τ and inversly proportional to the effective viscosity of the nematic medium. At shorter times, however, the dynamics is markedly nonlinear with MSD growing more slowly (subdiffusion or faster (superdiffusion than τ. These results are discussed in the context of coupling of colloidal particle's dynamics to the director fluctuation dynamics.

  2. Low-energy effective field theory below the electroweak scale: anomalous dimensions

    Science.gov (United States)

    Jenkins, Elizabeth E.; Manohar, Aneesh V.; Stoffer, Peter

    2018-01-01

    We compute the one-loop anomalous dimensions of the low-energy effective Lagrangian below the electroweak scale, up to terms of dimension six. The theory has 70 dimension-five and 3631 dimension-six Hermitian operators that preserve baryon and lepton number, as well as additional operators that violate baryon number and lepton number. The renormalization group equations for the quark and lepton masses and the QCD and QED gauge couplings are modified by dimension-five and dimension-six operator contributions. We compute the renormalization group equations from one insertion of dimension-five and dimension-six operators, as well as two insertions of dimension-five operators, to all terms of dimension less than or equal to six. The use of the equations of motion to eliminate operators can be ambiguous, and we show how to resolve this ambiguity by a careful use of field redefinitions.

  3. Experimental demonstration of programmable multi-functional spin logic cell based on spin Hall effect

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, X.; Wan, C.H., E-mail: wancaihua@iphy.ac.cn; Yuan, Z.H.; Fang, C.; Kong, W.J.; Wu, H.; Zhang, Q.T.; Tao, B.S.; Han, X.F., E-mail: xfhan@iphy.ac.cn

    2017-04-15

    Confronting with the gigantic volume of data produced every day, raising integration density by reducing the size of devices becomes harder and harder to meet the ever-increasing demand for high-performance computers. One feasible path is to actualize more logic functions in one cell. In this respect, we experimentally demonstrate a prototype spin-orbit torque based spin logic cell integrated with five frequently used logic functions (AND, OR, NOT, NAND and NOR). The cell can be easily programmed and reprogrammed to perform desired function. Furthermore, the information stored in cells is symmetry-protected, making it possible to expand into logic gate array where the cell can be manipulated one by one without changing the information of other undesired cells. This work provides a prospective example of multi-functional spin logic cell with reprogrammability and nonvolatility, which will advance the application of spin logic devices. - Highlights: • Experimental demonstration of spin logic cell based on spin Hall effect. • Five logic functions are realized in a single logic cell. • The logic cell is reprogrammable. • Information in the cell is symmetry-protected. • The logic cell can be easily expanded to logic gate array.

  4. Theoretical analysis of transcranial Hall-effect stimulation based on passive cable model

    International Nuclear Information System (INIS)

    Yuan Yi; Li Xiao-Li

    2015-01-01

    Transcranial Hall-effect stimulation (THS) is a new stimulation method in which an ultrasonic wave in a static magnetic field generates an electric field in an area of interest such as in the brain to modulate neuronal activities. However, the biophysical basis of simulating the neurons remains unknown. To address this problem, we perform a theoretical analysis based on a passive cable model to investigate the THS mechanism of neurons. Nerve tissues are conductive; an ultrasonic wave can move ions embedded in the tissue in a static magnetic field to generate an electric field (due to Lorentz force). In this study, a simulation model for an ultrasonically induced electric field in a static magnetic field is derived. Then, based on the passive cable model, the analytical solution for the voltage distribution in a nerve tissue is determined. The simulation results showthat THS can generate a voltage to stimulate neurons. Because the THS method possesses a higher spatial resolution and a deeper penetration depth, it shows promise as a tool for treating or rehabilitating neuropsychiatric disorders. (paper)

  5. Quantum Hall effect with small numbers of vortices in Bose-Einstein condensates

    Science.gov (United States)

    Byrnes, Tim; Dowling, Jonathan P.

    2015-08-01

    When vortices are displaced in Bose-Einstein condensates (BECs), the Magnus force gives the system a momentum transverse in the direction to the displacement. We show that BECs in long channels with vortices exhibit a quantization of the current response with respect to the spatial vortex distribution. The quantization originates from the well-known topological property of the phase around a vortex; it is an integer multiple of 2 π . In a way similar to that of the integer quantum Hall effect, the current along the channel is related to this topological phase and can be extracted from two experimentally measurable quantities: the total momentum of the BEC and the spatial distribution. The quantization is in units of m /2 h , where m is the mass of the atoms and h is Planck's constant. We derive an exact vortex momentum-displacement relation for BECs in long channels under general circumstances. Our results present the possibility that the configuration described here can be used as a novel way of measuring the mass of the atoms in the BEC using a topological invariant of the system. If an accurate determination of the plateaus are experimentally possible, this gives the possibility of a topological quantum mass standard and precise determination of the fine structure constant.

  6. Hall-Effect Based Semi-Fast AC On-Board Charging Equipment for Electric Vehicles

    Science.gov (United States)

    Milanés-Montero, María Isabel; Gallardo-Lozano, Javier; Romero-Cadaval, Enrique; González-Romera, Eva

    2011-01-01

    The expected increase in the penetration of electric vehicles (EV) and plug-in hybrid electric vehicles (PHEV) will produce unbalanced conditions, reactive power consumption and current harmonics drawn by the battery charging equipment, causing a great impact on the power quality of the future smart grid. A single-phase semi-fast electric vehicle battery charger is proposed in this paper. This ac on-board charging equipment can operate in grid-to-vehicle (G2V) mode, and also in vehicle-to-grid (V2G) mode, transferring the battery energy to the grid when the vehicle is parked. The charger is controlled with a Perfect Harmonic Cancellation (PHC) strategy, contributing to improve the grid power quality, since the current demanded or injected has no harmonic content and a high power factor. Hall-effect current and voltage transducers have been used in the sensor stage to carry out this control strategy. Experimental results with a laboratory prototype are presented. PMID:22163697

  7. Topological Hall effect in diffusive ferromagnetic thin films with spin-flip scattering

    Science.gov (United States)

    Zhang, Steven S.-L.; Heinonen, Olle

    2018-04-01

    We study the topological Hall (TH) effect in a diffusive ferromagnetic metal thin film by solving a Boltzmann transport equation in the presence of spin-flip scattering. A generalized spin-diffusion equation is derived which contains an additional source term associated with the gradient of the emergent magnetic field that arises from skyrmions. Because of the source term, spin accumulation may build up in the vicinity of the skyrmions. This gives rise to a spin-polarized diffusion current that in general suppresses the bulk TH current. Only when the spin-diffusion length is much smaller than the skyrmion size does the TH resistivity approach the value derived by Bruno et al. [Phys. Rev. Lett. 93, 096806 (2004), 10.1103/PhysRevLett.93.096806]. We derive a general expression of the TH resistivity that applies to thin-film geometries with spin-flip scattering, and show that the corrections to the TH resistivity become large when the size of room temperature skyrmions is further reduced to tens of nanometers.

  8. Quantum spin Hall effect in IV-VI topological crystalline insulators

    Science.gov (United States)

    Safaei, S.; Galicka, M.; Kacman, P.; Buczko, R.

    2015-06-01

    We envision that the quantum spin Hall effect should be observed in (111)-oriented thin films of SnSe and SnTe topological crystalline insulators. Using a tight-binding approach supported by first-principles calculations of the band structures, we demonstrate that in these films the energy gaps in the two-dimensional band spectrum depend in an oscillatory fashion on the layer thickness. These results as well as the calculated topological invariant indexes and edge state spin polarizations show that for films ˜20-40 monolayers thick a two-dimensional topological insulator phase appears. In this range of thicknesses in both SnSe and SnTe, (111)-oriented films edge states with Dirac cones with opposite spin polarization in their two branches are obtained. While in the SnTe layers a single Dirac cone appears at the projection of the {\\boldsymbol{}}\\bar{Γ } point of the two-dimensional Brillouin zone, in the SnSe (111)-oriented layers three Dirac cones at {\\boldsymbol{}}\\bar{M} points projections are predicted.

  9. Spin Singlet Quantum Hall Effect and nonabelian Landau-Ginzburg theory

    International Nuclear Information System (INIS)

    Balatsky, A.

    1991-01-01

    In this paper we present a theory of Singlet Quantum Hall Effect (SQHE). We show that the Halperin-Haldane SQHE wave function can be written in the form of a product of a wave function for charged semions in a magnetic field and a wave function for the Chiral Spin Liquid of neutral spin-1/2 semions. We introduce field-theoretic model in which the electron operators are factorized in terms of charged spinless semions (holons) and neutral spin-1/2 semions (spinons). Broken time reversal symmetry and short ranged spin correlations lead to Su(2) κ=1 Chern-Simons term in Landau-Ginzburg action for SQHE phase. We construct appropriate coherent states for SQHE phase and show the existence of SU(2) valued gauge potential. This potential appears as a result of ''spin rigidity'' of the ground state against any displacements of nodes of wave function from positions of the particles and reflects the nontrivial monodromy in the presence of these displacenmants. We argue that topological structure of Su(2) κ=1 Chern-Simons theory unambiguously dictates semion statistics of spinons. 19 refs

  10. Fractional quantum Hall effect in the interacting Hofstadter model via tensor networks

    Science.gov (United States)

    Gerster, M.; Rizzi, M.; Silvi, P.; Dalmonte, M.; Montangero, S.

    2017-11-01

    We show via tensor network methods that the Harper-Hofstadter Hamiltonian for hard-core bosons on a square geometry supports a topological phase realizing the ν =1/2 fractional quantum Hall (FQH) effect on the lattice. We address the robustness of the ground-state degeneracy and of the energy gap, measure the many-body Chern number, and characterize the system using Green functions, showing that they decay algebraically at the edges of open geometries, indicating the presence of gapless edge modes. Moreover, we estimate the topological entanglement entropy by taking a combination of lattice bipartitions that reproduces the topological structure of the original proposals by Kitaev and Preskill [Phys. Rev. Lett. 96, 110404 (2006), 10.1103/PhysRevLett.96.110404] and Levin and Wen [Phys. Rev. Lett. 96, 110405 (2006), 10.1103/PhysRevLett.96.110405]. The numerical results show that the topological contribution is compatible with the expected value γ =1/2 . Our results provide extensive evidence that FQH states are within reach of state-of-the-art cold-atom experiments.

  11. Hall-effect based semi-fast AC on-board charging equipment for electric vehicles.

    Science.gov (United States)

    Milanés-Montero, María Isabel; Gallardo-Lozano, Javier; Romero-Cadaval, Enrique; González-Romera, Eva

    2011-01-01

    The expected increase in the penetration of electric vehicles (EV) and plug-in hybrid electric vehicles (PHEV) will produce unbalanced conditions, reactive power consumption and current harmonics drawn by the battery charging equipment, causing a great impact on the power quality of the future smart grid. A single-phase semi-fast electric vehicle battery charger is proposed in this paper. This ac on-board charging equipment can operate in grid-to-vehicle (G2V) mode, and also in vehicle-to-grid (V2G) mode, transferring the battery energy to the grid when the vehicle is parked. The charger is controlled with a Perfect Harmonic Cancellation (PHC) strategy, contributing to improve the grid power quality, since the current demanded or injected has no harmonic content and a high power factor. Hall-effect current and voltage transducers have been used in the sensor stage to carry out this control strategy. Experimental results with a laboratory prototype are presented.

  12. Hall-Effect Based Semi-Fast AC On-Board Charging Equipment for Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Eva González-Romera

    2011-09-01

    Full Text Available The expected increase in the penetration of electric vehicles (EV and plug-in hybrid electric vehicles (PHEV will produce unbalanced conditions, reactive power consumption and current harmonics drawn by the battery charging equipment, causing a great impact on the power quality of the future smart grid. A single-phase semi-fast electric vehicle battery charger is proposed in this paper. This ac on-board charging equipment can operate in grid-to-vehicle (G2V mode, and also in vehicle-to-grid (V2G mode, transferring the battery energy to the grid when the vehicle is parked. The charger is controlled with a Perfect Harmonic Cancellation (PHC strategy, contributing to improve the grid power quality, since the current demanded or injected has no harmonic content and a high power factor. Hall-effect current and voltage transducers have been used in the sensor stage to carry out this control strategy. Experimental results with a laboratory prototype are presented.

  13. Transport measurements and simulations of GaAs/AlGaAs ``anti-Hall-bar within a Hall bar'' devices

    Science.gov (United States)

    Kriisa, Annika; Mani, Ramesh G.

    2009-03-01

    Hall effect measurements are often carried out in the Hall geometry, which is a thin rectangular plate with current and Hall voltage contacts at the external boundary. The motivation of this study is to further understand the impact on Hall effect when a hole is inserted inside Hall geometry. One way on conducting this investigation is to superimpose an ``anti-Hall bar'' inside the standard Hall bar, where the anti Hall bar is actually the hole inside the Hall device with contacts on the inside boundary of this hole. This configuration is thought to generate an ordinary Hall effect within the interior boundary such that the interior Hall voltage divided by the interior injected current equals the Hall resistance. One believes that it might also be possible to simultaneously realize multiple independent Hall effects by injecting multiple currents into the multiply connected device [1]. We have studied Hall effect in the doubly connected ``anti-Hall bar within a Hall bar'' geometry fabricated out of the GaAs/AlGaAs semiconductor system. Also the simulations of the distribution of the Hall current and potential profile within the specimen are conducted. To attain understanding of how the Hall effect arises in this geometry, the simulation plots are compared to the experimental results. [1] R. G. Mani and K. von Klitzing, App. Phys. Lett. 1993, 64, 1262-1264.

  14. Anisotropic magnetoresistance and anomalous Nernst effect in exchange biased permalloy/(1 0 0) NiO single-crystal

    Energy Technology Data Exchange (ETDEWEB)

    Holanda, J., E-mail: joseholanda@df.ufpe.br; Maior, D.S.; Azevedo, A.; Rezende, S.M.

    2017-06-15

    Highlights: • We have investigated the anisotropic magnetoresistance (AMR) and the anomalous Nernst effect (ANE) in an exchange-biased bilayer Py/(100) NiO single-Crystal. • The shift of the hysteresis loop, measured with the different techniques, yield approximately the same value of H{sub EB}. • In spite of the measurement techniques be based in different physical phenomena, our results confirm the robustness of the exchange anisotropy at the Py/NiO interface. • The strength of the anomalous Nernst effect for the exchange-biased permalloy film is compared to values measured in non biased films. - Abstract: We have investigated the anisotropic magnetoresistance (AMR) and the anomalous Nernst effect (ANE) in an exchange-biased bilayer consisting of a thin film of permalloy deposited on a single crystal antiferromagnetic NiO (1 0 0). The exchange bias field (H{sub EB}) value was obtained by means of AMR, ANE and magnetization hysteresis measurements. The shift of the hysteresis loop, measured with the three different techniques, yield approximately the same value of H{sub EB.} In spite of the measurement techniques be based in different physical phenomena, our results confirm the robustness of the exchange anisotropy at the Py/NiO interface. The strength of the anomalous Nernst effect for the exchange-biased permalloy film is compared to values measured in non biased films.

  15. The Effectiveness of Magnetic Shielding in High-Isp Hall Thrusters

    Science.gov (United States)

    Mikellides, Ioannis G.; Hofer, Richard R.; Katz, Ira; Goebel, Dan M.

    2013-01-01

    A series of numerical simulations and experiments have been performed to assess the effectiveness of magnetic shielding in a Hall thruster operating in the discharge voltage range of 300-700 V (Isp 2000-2700 s) at 6 kW, and 800 V (Isp 3000) at 9 kW. In this paper we report on the simulation results and their validation with experimental measurements. At 6 kW the magnetic field topology with which we recently demonstrated highly effective magnetic shielding at 300 V was retained for all other discharge voltages; only the magnitude of the field was changed to achieve optimum thruster performance. It is found that magnetic shielding remains highly effective for all discharge voltages studied. Maximum erosion rates that remain fairly constant across the range of 300-700 V are computed, with values not exceeding 10-2 mm/kh. Such rates are 3 orders of magnitude less than those observed in the unshielded version of the same thruster at 300 V. At 9 kW and 800 V, saturation of the magnetic circuit did not permit us to attain precisely the same magnetic shielding topology as that employed during the 6-kW operation since this thruster was not designed to operate at this condition. Consequently, the maximum erosion rate at the inner wall is found to be 1 order of magnitude higher (10-1 mm/kh) than that at the 6-kW level. At the outer wall the ion energy is below the sputtering yield threshold so no measurable erosion is expected. The reasons behind the effectiveness of magnetic shielding at higher discharge voltages are discussed.

  16. Spin Hall noise

    NARCIS (Netherlands)

    Kamra, A.; Witek, F.P.; Meyer, S.; Huebl, H.; Geprägs, S.; Gross, R.; Bauer, G.E.W.; Goennenwein, S.T.B.

    2014-01-01

    We measure the low-frequency thermal fluctuations of pure spin current in a platinum film deposited on yttrium iron garnet via the inverse spin Hall effect (ISHE)-mediated voltage noise as a function of the angle ? between the magnetization and the transport direction. The results are consistent

  17. A scanning tunneling microscopy based potentiometry technique and its application to the local sensing of the spin Hall effect

    Directory of Open Access Journals (Sweden)

    Ting Xie

    2017-12-01

    Full Text Available A scanning tunneling microscopy based potentiometry technique for the measurements of the local surface electric potential is presented. A voltage compensation circuit based on this potentiometry technique is developed and employed to maintain a desired tunneling voltage independent of the bias current flow through the film. The application of this potentiometry technique to the local sensing of the spin Hall effect is outlined and some experimental results are reported.

  18. Charge Hall effect driven by spin-dependent chemical potential gradients and Onsager relations in mesoscopic systems

    Czech Academy of Sciences Publication Activity Database

    Hankiewicz, E. M.; Li, J.; Jungwirth, Tomáš; Niu, Q.; Shen, S.-Q.; Sinova, J.

    2005-01-01

    Roč. 72, č. 15 (2005), 155305/1-155305/5 ISSN 1098-0121 R&D Projects: GA MŠk(CZ) LC510 Grant - others:Research Grant Council of Hong Kong (SQS)(CN) DE-FG03-02ER45958 Institutional research plan: CEZ:AV0Z10100521 Keywords : spin Hall effect * spintronics Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.185, year: 2005

  19. A Comprehensive Investigation of Facility Effects on the Testing of High-Power Monolithic and Clustered Hall Thruster Systems

    Science.gov (United States)

    2006-02-01

    I. D., Beattie J. R., Cappelli, M., Chamber Effects on Plume Expansion for a Low - Power Hydrogen Arcjet , IEPC-93-126, 23rd International Electric...The traces show a stiucture similar to those of the monolithic thrusters. Beal observes similar results for the low - power cluster. The only difference...2001. 240 37. Hruby, V., Monheiser, J., Pote, B., Rostler, P., Kolencik, J., Freeman, C., Development of Low Power Hall Thrusters, AIAA-99-3534, 30th

  20. Non-Commuting Coordinates in Vortex Dynamics and in the Hall Effect, Related to "exotic" Galilean Symmetry

    Science.gov (United States)

    Horváthy, P. A.

    2003-04-01

    Vortex dynamics in a thin superfluid 4He film as well as in a type II superconductor is described by the classical counterpart of the model advocated by Peierls, and used for deriving the ground states of the Fractional Quantum Hall Effect. The model has non-commuting coordinates, and is obtained by reduction from a particle associated with the "exotic" extension of the planar Galilei group.

  1. Tunneling Planar Hall Effect in Topological Insulators: Spin Valves and Amplifiers.

    Science.gov (United States)

    Scharf, Benedikt; Matos-Abiague, Alex; Han, Jong E; Hankiewicz, Ewelina M; Žutić, Igor

    2016-10-14

    We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator-ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.

  2. THE EFFECTS OF PATRIARCHY SYSTEM ON WOMEN CONDITION IN THE NOVEL OF THE TENANT OF WILDFELL HALL

    Directory of Open Access Journals (Sweden)

    Fhadli Noer

    2016-11-01

    Full Text Available Patriarchy system occurs in the era of Victoria and many women experience the effects of this system. The aims of the study is to describe the patriarchy system presented in the novel The Tenant of Wildfell Hall by Anne Bronte. This research was conducted with descriptive qualitative method. The data were taken from Anne Bronte’s novel, The Tenant of Wildfell Hall published by Anne Bronte in 1848. Data were collected from intensive reading of the novel and library research for resources related to patriarchy system. The result of study indicated that the patriarchy system which found in the novel ‘The Tenant of Wildfell Hall’ (1848 touch some basic institution namely economic institution, education, religion, family, state institution and cultural values. This novel told us about the condition of society in the Victorian era especially related to the patriarchy system occurred in that era.

  3. Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2

    Directory of Open Access Journals (Sweden)

    Manik Goyal

    2018-02-01

    Full Text Available Low-temperature magnetotransport studies are reported for (112Cd3As2 films grown on (111CdTe by molecular beam epitaxy as a function of the Cd3As2 film thickness. All films show Shubnikov-de Haas oscillations. An even-integer quantum Hall effect is observed for films thinner than 70 nm. For the thinnest films, the bulk is gapped and transport at low temperatures occurs only via the gapless, two-dimensional states. The lowest Landau level is reached at ∼10 T, and the longitudinal resistance nearly vanishes at the plateaus in the Hall resistance. The results are discussed in the context of the current theoretical understanding of topological surface states in three-dimensional Dirac semimetals.

  4. Hall current and Joule heating effects on peristaltic flow of viscous fluid in a rotating channel with convective boundary conditions

    Directory of Open Access Journals (Sweden)

    Tasawar Hayat

    Full Text Available The present article has been arranged to study the Hall current and Joule heating effects on peristaltic flow of viscous fluid in a channel with flexible walls. Both fluid and channel are in a state of solid body rotation. Convective conditions for heat transfer in the formulation are adopted. Viscous dissipation in energy expression is taken into account. Resulting differential systems after invoking small Reynolds number and long wavelength considerations are numerically solved. Runge-Kutta scheme of order four is implemented for the results of axial and secondary velocities, temperature and heat transfer coefficient. Comparison with previous limiting studies is shown. Outcome of new parameters of interest is analyzed. Keywords: Rotating frame, Hall current, Joule heating, Convective conditions, Wall properties

  5. Effect of “overlapping” voltage contacts in planar hall transducers

    NARCIS (Netherlands)

    Leeuwis, Henk

    1983-01-01

    A mathematical model is derived to compute the output of a planar Hall tranducer (PHT) with overlapping voltage contacts at arbitrary positions and of arbitrary sizes. The model is based on the finite difference representation of the integral equation J…n ds = 0. In order to verify the model, the

  6. Positions of the magnetoroton minima in the fractional quantum Hall effect

    DEFF Research Database (Denmark)

    nrc762, nrc762; Pu, Songyang

    2017-01-01

    The multitude of excitations of the fractional quantum Hall state are very accurately understood, microscopically, as excitations of composite fermions across their Landau-like Λ levels. In particular, the dispersion of the composite fermion exciton, which is the lowest energy spin conserving...

  7. Planar Hall effect and magnetic anisotropy in epitaxially strained chromium dioxide thin films

    NARCIS (Netherlands)

    Goennenwein, S.T.B.; Keizer, R.S.; Schink, S.W.; Van Dijk, I.; Klapwijk, T.M.; Miao, G.X.; Xiao, G.; Gupta, A.

    2007-01-01

    We have measured the in-plane anisotropic magnetoresistance of 100?nm thick CrO2 thin films at liquid He temperatures. In low magnetic fields H, both the longitudinal and the transverse (planar Hall) resistance show abrupt switches, which characteristically depend on the orientation of H. All the

  8. Hall effects on hydromagnetic Couette flow of Class-II in a rotating ...

    African Journals Online (AJOL)

    user

    Fluid flow of Type-II: Fluid flows past a stationary plate which is induced due to movement of fluid at infinity i.e. fluid outside the boundary layer region. The fluid outside the .... and p are, respectively, Hall current parameter, fluid density, kinematic coefficient of viscosity, magnetic permeability, electrical conductivity of the fluid ...

  9. Effects of Hall current on convective heat generating fluid in slip flow regime

    Energy Technology Data Exchange (ETDEWEB)

    Singh, S.S.; Ram, P.C. (Kenyatta Univ., Nairobi (KE). Dept. of Mathematics); Stower, G.X. (Jomo Kenyatta Univ. College of Agriculture and Technology, Nairobi (KE). Dept. of Mathematics and Computer Science)

    1992-08-01

    The problem of free convection flow of a viscous heat generating rarefied gas is considered for the case when a strong magnetic field is imposed perpendicularly to the plane of flow. Analytical expressions for the velocity field and temperature are obtained, and the influence of the Hall currents m and the heat source parameter {delta} on the velocity field and temperature are discussed. (Author).

  10. Quasiparticle Tunneling in the Fractional Quantum Hall effect at filling fraction ν=5/2

    Science.gov (United States)

    Radu, Iuliana P.

    2009-03-01

    In a two-dimensional electron gas (2DEG), in the fractional quantum Hall regime, the quasiparticles are predicted to have fractional charge and statistics, as well as modified Coulomb interactions. The state at filling fraction ν=5/2 is predicted by some theories to have non-abelian statistics, a property that might be exploited for topological quantum computing. However, alternative models with abelian properties have been proposed as well. Weak quasiparticle tunneling between counter-propagating edges is one of the methods that can be used to learn about the properties of the state and potentially distinguish between models describing it. We employ an electrostatically defined quantum point contact (QPC) fabricated on a high mobility GaAs/AlGaAs 2DEG to create a constriction where quasiparticles can tunnel between counter-propagating edges. We study the temperature and dc bias dependence of the tunneling conductance, while preserving the same filling fraction in the constriction and the bulk of the sample. The data show scaling of the bias-dependent tunneling over a range of temperatures, in agreement with the theory of weak quasiparticle tunneling, and we extract values for the effective charge and interaction parameter of the quasiparticles. The ranges of values obtained are consistent with those predicted by certain models describing the 5/2 state, indicating as more probable a non-abelian state. This work was done in collaboration with J. B. Miller, C. M. Marcus, M. A. Kastner, L. N. Pfeiffer and K. W. West. This work was supported in part by the Army Research Office (W911NF-05-1-0062), the Nanoscale Science and Engineering Center program of NSF (PHY-0117795), NSF (DMR-0701386), the Center for Materials Science and Engineering program of NSF (DMR-0213282) at MIT, the Microsoft Corporation Project Q, and the Center for Nanoscale Systems at Harvard University.

  11. Particle-hole symmetry for composite fermions: An emergent symmetry in the fractional quantum Hall effect

    Science.gov (United States)

    Balram, Ajit C.; Jain, J. K.

    2017-12-01

    The particle-hole (PH) symmetry of electrons is an exact symmetry of the electronic Hamiltonian confined to a specific Landau level, and its interplay with the formation of composite fermions has attracted much attention of late. We investigate an emergent symmetry in the fractional quantum Hall effect, namely, the PH symmetry of composite fermions, which relates states at composite fermion filling factors ν*=n +ν ¯ and ν*=n +1 -ν ¯ , where the integer n is the Λ -level index and 0 ≤ν ¯≤1 . Detailed calculations using the microscopic theory of composite fermions demonstrate the following for low-lying Λ levels (small n ): (i) The two-body interaction between composite-fermion particles is very similar, apart from a constant additive term and an overall scale factor, to that between composite-fermion holes in the same Λ level; and (ii) the three-body interaction for composite fermions is an order of magnitude smaller than the two-body interaction. Taken together, these results imply an approximate PH symmetry for composite fermions in low Λ levels, which is also supported by exact-diagonalization studies and available experiments. This symmetry, which relates states at electron filling factors ν =n/+ν ¯ 2 (n +ν ¯)±1 and ν =n/+1 -ν ¯ 2 (n +1 -ν ¯)±1 , is not present in the original Hamiltonian and owes its existence entirely to the formation of composite fermions. With increasing Λ -level index, the two-body and three-body pseudopotentials become comparable, but at the same time they both diminish in magnitude, indicating that the interaction between composite fermions becomes weak as we approach ν =1 /2 .

  12. Fractional quantum Hall effect: Construction of the Hartree-Fock state by using translational covariance

    International Nuclear Information System (INIS)

    Ferrari, R.; I.N.F.N., Trento

    1994-01-01

    The formalism introduced in a previous paper is used for discussing the Coulomb interaction of many electrons moving in two space-dimensions in the presence of a strong magnetic field. The matrix element of the coulomb interaction is evaluated in the new basis, whose states are invariant under discrete translations. This paper is devoted to the case of low filling factor, thus the authors limit themselves to the lowest Landau level and to spins all oriented along the magnetic field. For the case of filling factor ν f = 1/u they give an Ansatz on the state of many electrons which provides a good approximated solution of the Hartree-Fock equation. For general filling factor ν f = u'/u a trial state is given which converges very rapidly to a solution of the self-consistent equation. They generalize the Hartree-Fock equation by considering some correlation: all quantum states are allowed for the u' electrons with the same translation quantum numbers. Numerical results are given for the mean energy and the energy bands, for some values of the filling factor (ν f = 1/2, 1/3, 2/3, 1/4, 3/4, 1/5, 2/5, 3/5, 4/5). The results agree numerically with the Charge Density Wave approach. The boundary conditions are shown to be very important: only large systems (degeneracy of Landau level over 200) are not affected by the boundaries. Therefore results obtained on small scale systems are somewhat unreliable. The relevance of the results for the Fractional Quantum Hall Effect is briefly discussed

  13. Anomalous effect of ion velocity on track formation in GeS

    Energy Technology Data Exchange (ETDEWEB)

    Szenes, G., E-mail: szenesgyorgy@caesar.elte.hu [Department of Materials Physics, Eötvös University, P.O. Box 32, H-1518 Budapest (Hungary); Pécz, B. [Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, 1525 Budapest, P.O. Box 49 (Hungary)

    2016-12-15

    Systematic experiments were performed for studying the effect of the projectile velocity (velocity effect, VE) in GeS which has a highly anisotropic conductivity. The prethinned specimens were irradiated by Bi, Au, W, Xe, Ag, Kr, Ni and Fe ions of about E ≈ 1 MeV/nucleon energy. Track radii were measured by transmission electron microscopy. Compared to previous experiments performed with high velocity projectile, there is a marked VE for S{sub e} > 20 keV/nm (S{sub e} – electronic stopping power). However, the VE is gradually reduced and finally disappears as S{sub e} decreases. This effect is described for the first time. The predictions according to the Analytical Thermal Spike Model are in excellent quantitative agreement with the experiments in the range S{sub e} > 20 keV/nm. The anomalous behavior of track evolution at lower values of S{sub e} is attributed to the combination of semiconducting and insulating properties. An explanation of the VE is given based on the Coulomb explosion model.

  14. The foreign exchange market: return distributions, multifractality, anomalous multifractality and the Epps effect

    Science.gov (United States)

    Drożdż, Stanisław; Kwapień, Jarosław; Oświȩcimka, Paweł; Rak, Rafał

    2010-10-01

    We present a systematic study of various statistical characteristics of high-frequency returns from the foreign exchange market. This study is based on six exchange rates forming two triangles: EUR-GBP-USD and GBP-CHF-JPY. It is shown that the exchange rate return fluctuations for all of the pairs considered are well described by the non-extensive statistics in terms of q-Gaussians. There exist some small quantitative variations in the non-extensivity q-parameter values for different exchange rates (which depend also on the time scales studied), and this can be related to the importance of a given exchange rate in the world's currency trade. Temporal correlations organize the series of returns such that they develop the multifractal characteristics for all of the exchange rates, with a varying degree of symmetry of the singularity spectrum f(α), however. The most symmetric spectrum is identified for the GBP/USD. We also form time series of triangular residual returns and find that the distributions of their fluctuations develop disproportionately heavier tails as compared to small fluctuations, which excludes description in terms of q-Gaussians. The multifractal characteristics of these residual returns reveal such anomalous properties as negative singularity exponents and even negative singularity spectra. Such anomalous multifractal measures have so far been considered in the literature in connection with diffusion-limited aggregation and with turbulence. Studying the cross-correlations among different exchange rates, we found that market inefficiency on short time scales leads to the occurrence of the Epps effect on much longer time scales, but comparable to the ones for the stock market. Although the currency market is much more liquid than the stock markets and has a much greater transaction frequency, the building up of correlations takes up to several hours—a duration that does not differ much from what is observed in the stock markets. This may suggest

  15. Integration Tests of the 4 kW-class High Voltage Hall Accelerator Power Processing Unit with the HiVHAc and the SPT-140 Hall Effect Thrusters

    Science.gov (United States)

    Kamhawi, Hani; Pinero, Luis; Haag, Thomas; Huang, Wensheng; Ahern, Drew; Liang, Ray; Shilo, Vlad

    2016-01-01

    NASAs Science Mission Directorate is sponsoring the development of a 4 kW-class Hall propulsion system for implementation in NASA science and exploration missions. The main components of the system include the High Voltage Hall Accelerator (HiVHAc), an engineering model power processing unit (PPU) developed by Colorado Power Electronics, and a xenon flow control module (XFCM) developed by VACCO Industries. NASA Glenn Research Center is performing integrated tests of the Hall thruster propulsion system. This presentation presents results from integrated tests of the PPU and XFCM with the HiVHAc engineering development thruster and a SPT-140 thruster provided by Space System Loral. The results presented in this paper demonstrate thruster discharge initiation, open-loop and closed-loop control of the discharge current with anode flow for both the HiVHAc and the SPT-140 thrusters. Integrated tests with the SPT-140 thruster indicated that the PPU was able to repeatedly initiate the thrusters discharge, achieve steady state operation, and successfully throttle the thruster between 1.5 and 4.5 kW. The measured SPT-140 performance was identical to levels reported by Space Systems Loral.

  16. Bound values for Hall conductivity of heterogeneous medium under ...

    Indian Academy of Sciences (India)

    Bound values for Hall conductivity under quantum Hall effect (QHE) conditions in inhomogeneous medium has been studied. It is shown that bound values for Hall conductivity differ from bound values for metallic conductivity. This is due to the unusual character of current percolation under quantum Hall effect conditions.

  17. Non-Abelian fermionization and fractional quantum Hall transitions

    Science.gov (United States)

    Hui, Aaron; Mulligan, Michael; Kim, Eun-Ah

    2018-02-01

    There has been a recent surge of interest in dualities relating theories of Chern-Simons gauge fields coupled to either bosons or fermions within the condensed matter community, particularly in the context of topological insulators and the half-filled Landau level. Here, we study the application of one such duality to the long-standing problem of quantum Hall interplateaux transitions. The key motivating experimental observations are the anomalously large value of the correlation length exponent ν ≈2.3 and that ν is observed to be superuniversal, i.e., the same in the vicinity of distinct critical points [Sondhi et al., Rev. Mod. Phys. 69, 315 (1997), 10.1103/RevModPhys.69.315]. Duality motivates effective descriptions for a fractional quantum Hall plateau transition involving a Chern-Simons field with U (Nc) gauge group coupled to Nf=1 fermion. We study one class of theories in a controlled limit where Nf≫Nc and calculate ν to leading nontrivial order in the absence of disorder. Although these theories do not yield an anomalously large exponent ν within the large Nf≫Nc expansion, they do offer a new parameter space of theories that is apparently different from prior works involving Abelian Chern-Simons gauge fields [Wen and Wu, Phys. Rev. Lett. 70, 1501 (1993), 10.1103/PhysRevLett.70.1501; Chen et al., Phys. Rev. B 48, 13749 (1993), 10.1103/PhysRevB.48.13749].

  18. Optical properties of metals: Infrared emissivity in the anomalous skin effect spectral region

    Energy Technology Data Exchange (ETDEWEB)

    Echániz, T. [Departamento de Física de la Materia Condensada, Facultad de Ciencia y Tecnología, UPV/EHU, Sarriena s/n, Leioa 48940 (Spain); Pérez-Sáez, R. B., E-mail: raul.perez@ehu.es; Tello, M. J. [Departamento de Física de la Materia Condensada, Facultad de Ciencia y Tecnología, UPV/EHU, Sarriena s/n, Leioa 48940 (Spain); Instituto de Síntesis y Estudio de Materiales, Universidad del País Vasco, Apdo. 644, Bilbao 48080 (Spain)

    2014-09-07

    When the penetration depth of an electromagnetic wave in a metal is similar to the mean free path of the conduction electrons, the Drude classical theory is no longer satisfied and the skin effect becomes anomalous. Physical parameters of this theory for twelve metals were calculated and analyzed. The theory predicts an emissivity peak ε{sub peak} at room temperature in the mid-infrared for smooth surface metals that moves towards larger wavelengths as temperature decreases. Furthermore, the theory states that ε{sub peak} increases with the emission angle but its position, λ{sub peak}, is constant. Copper directional emissivity measurements as well as emissivity obtained using optical constants data confirm the predictions of the theory. Considering the relationship between the specularity parameter p and the sample roughness, it is concluded that p is not the simple parameter it is usually assumed to be. Quantitative comparison between experimental data and theoretical predictions shows that the specularity parameter can be equal to one for roughness values larger than those predicted. An exhaustive analysis of the experimental optical parameters shows signs of a reflectance broad peak in Cu, Al, Au, and Mo around the wavelength predicted by the theory for p = 1.

  19. The Binary Offset Effect in CCDs: an Anomalous Readout Artifact Affecting Most Astronomical CCDs in Use

    Science.gov (United States)

    Boone, Kyle Robert; Aldering, Gregory; Copin, Yannick; Dixon, Samantha; Domagalski, Rachel; Gangler, Emmanuel; Pecontal, Emmanuel; Perlmutter, Saul; Nearby Supernova Factory Collaboration

    2018-01-01

    We discovered an anomalous behavior of CCD readout electronics that affects their use in many astronomical applications, which we call the “binary offset effect”. Due to feedback in the readout electronics, an offset is introduced in the values read out for each pixel that depends on the binary encoding of the previously read-out pixel values. One consequence of this effect is that a pathological local background offset can be introduced in images that only appears where science data are present on the CCD. The amplitude of this introduced offset does not scale monotonically with the amplitude of the objects in the image, and can be up to 4.5 ADU per pixel for certain instruments. Additionally, this background offset will be shifted by several pixels from the science data, potentially distorting the shape of objects in the image. We tested 22 instruments for signs of the binary offset effect and found evidence of it in 16 of them, including LRIS and DEIMOS on the Keck telescopes, WFC3-UVIS and STIS on HST, MegaCam on CFHT, SNIFS on the UH88 telescope, GMOS on the Gemini telescopes, HSC on Subaru, and FORS on VLT. A large amount of archival data is therefore affected by the binary offset effect, and conventional methods of reducing CCD images do not measure or remove the introduced offsets. As a demonstration of how to correct for the binary offset effect, we have developed a model that can accurately predict and remove the introduced offsets for the SNIFS instrument on the UH88 telescope. Accounting for the binary offset effect is essential for precision low-count astronomical observations with CCDs.

  20. Scaling behavior of mixed-state hall effect in MgB2 thin films

    International Nuclear Information System (INIS)

    Jung, Soon-Gil; Seong, W.K.; Kang, W.N.; Choi, Eun-Mi; Kim, Heon-Jung; Lee, Sung-Ik; Kim, Hyeong-Jin; Kim, H.C.

    2006-01-01

    The Hall resistivity (ρ xy ) and the longitudinal resistivity (ρ xx ) in c-axis-oriented superconducting MgB 2 thin films have been investigated in extended fields up to 18T. We have observed a scaling behavior between the Hall resistivity and the longitudinal resistivity, ρ xy =Aρ xx β , where the exponent (β) is observed to be independent of the temperatures and the magnetic fields. For a wide magnetic field region from 1 to 18T and a wide temperature region from 10 to 28K, a universal power law with β=2.0+/-0.1 was observed in c-axis-oriented MgB 2 thin films. These results can be well interpreted by using recent models

  1. Performance and Thermal Characterization of the NASA-300MS 20 kW Hall Effect Thruster

    Science.gov (United States)

    Kamhawi, Hani; Huang, Wensheng; Haag, Thomas; Shastry, Rohit; Soulas, George; Smith, Timothy; Mikellides, Ioannis; Hofer, Richard

    2013-01-01

    NASA's Space Technology Mission Directorate is sponsoring the development of a high fidelity 15 kW-class long-life high performance Hall thruster for candidate NASA technology demonstration missions. An essential element of the development process is demonstration that incorporation of magnetic shielding on a 20 kW-class Hall thruster will yield significant improvements in the throughput capability of the thruster without any significant reduction in thruster performance. As such, NASA Glenn Research Center and the Jet Propulsion Laboratory collaborated on modifying the NASA-300M 20 kW Hall thruster to improve its propellant throughput capability. JPL and NASA Glenn researchers performed plasma numerical simulations with JPL's Hall2De and a commercially available magnetic modeling code that indicated significant enhancement in the throughput capability of the NASA-300M can be attained by modifying the thruster's magnetic circuit. This led to modifying the NASA-300M magnetic topology to a magnetically shielded topology. This paper presents performance evaluation results of the two NASA-300M magnetically shielded thruster configurations, designated 300MS and 300MS-2. The 300MS and 300MS-2 were operated at power levels between 2.5 and 20 kW at discharge voltages between 200 and 700 V. Discharge channel deposition from back-sputtered facility wall flux, and plasma potential and electron temperature measurements made on the inner and outer discharge channel surfaces confirmed that magnetic shielding was achieved. Peak total thrust efficiency of 64% and total specific impulse of 3,050 sec were demonstrated with the 300MS-2 at 20 kW. Thermal characterization results indicate that the boron nitride discharge chamber walls temperatures are approximately 100 C lower for the 300MS when compared to the NASA- 300M at the same thruster operating discharge power.

  2. Multi-analysis and modeling of asymmetry offset for Hall effect structures

    Energy Technology Data Exchange (ETDEWEB)

    Paun, Maria-Alexandra, E-mail: maria_paun2003@yahoo.com

    2017-03-15

    The topological (asymmetry) offset voltage of CMOS cross-like Hall cells is analyzed in this paper. In order to attain the stated objective, different approaches have been considered. Both circuit and three-dimensional models have been developed. Variation of the misalignment offset with the biasing current has been studied through physical and circuit models. The latter is a non-homogenous finite elements model, which relies on using parameterized resistances and current-controlled current sources, of CMOS Hall cells. The displacement offset for various asymmetries and the offset variation with the temperature were investigated through the circuit model developed. Various experimental results for the single and magnetic equivalent offset have also been provided. - Highlights: • In this paper both physical and circuit models have been proposed for the evaluation of Hall cells offset. • Variation of the misalignment offset with the biasing current has been studied. • The displacement offset for various asymmetries and the offset variation with the temperature were investigated. • Various experimental results for single and magnetic equivalent offset were provided. • The obtained simulation results are in accordance with the experimental data.

  3. Discharge Oscillations in a Permanent Magnet Cylindrical Hall-Effect Thruster

    Science.gov (United States)

    Polzin, K. A.; Sooby, E. S.; Raitses, Y.; Merino, E.; Fisch, N. J.

    2009-01-01

    Measurements of the discharge current in a cylindrical Hall thruster are presented to quantify plasma oscillations and instabilities without introducing an intrusive probe into the plasma. The time-varying component of the discharge current is measured using a current monitor that possesses a wide frequency bandwidth and the signal is Fourier transformed to yield the frequency spectra present, allowing for the identification of plasma oscillations. The data show that the discharge current oscillations become generally greater in amplitude and complexity as the voltage is increased, and are reduced in severity with increasing flow rate. The breathing mode ionization instability is identified, with frequency as a function of discharge voltage not increasing with discharge voltage as has been observed in some traditional Hall thruster geometries, but instead following a scaling similar to a large-amplitude, nonlinear oscillation mode recently predicted in for annular Hall thrusters. A transition from lower amplitude oscillations to large relative fluctuations in the oscillating discharge current is observed at low flow rates and is suppressed as the mass flow rate is increased. A second set of peaks in the frequency spectra are observed at the highest propellant flow rate tested. Possible mechanisms that might give rise to these peaks include ionization instabilities and interactions between various oscillatory modes.

  4. Aharonov-Casher and spin Hall effects in mesoscopic ring structures with strong spin-orbit interaction

    Czech Academy of Sciences Publication Activity Database

    Borunda, M.F.; Liu, X.; Kovalev, A.A.; Liu, X.-J.; Jungwirth, Tomáš; Sinova, J.

    2008-01-01

    Roč. 78, č. 24 (2008), 245315/1-245315/9 ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521 Keywords : Aharonov-Casher effect * spin Hall effect * spin-orbit interaction Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.322, year: 2008

  5. String Theory, Chern-Simons Theory and the Fractional Quantum Hall Effect

    Science.gov (United States)

    Moore, Nathan Paul

    In this thesis we explore two interesting relationships between string theory and quantum field theory. Firstly, we develop an equivalence between two Hilbert spaces: (i) the space of states of U(1)n Chern-Simons theory with a certain class of tridiagonal matrices of coupling constants (with corners) on T2; and (ii) the space of ground states of strings on an associated mapping torus with T2 fiber. The equivalence is deduced by studying the space of ground states of SL(2,Z)-twisted circle compactifications of U(1) gauge theory, connected with a Janus configuration, and further compactified on T2. The equality of dimensions of the two Hilbert spaces (i) and (ii) is equivalent to a known identity on determinants of tridiagonal matrices with corners. The equivalence of operator algebras acting on the two Hilbert spaces follows from a relation between the Smith normal form of the Chern-Simons coupling constant matrix and the isometry group of the mapping torus, as well as the torsion part of its first homology group. Secondly, the Fractional Quantum Hall Effect appears as part of the low-energy description of the Coulomb branch of the A1 (2,0)-theory formulated on (S1 x R 2)/Zk, where the generator of Zk acts as a combination of translation on S1 and rotation by 2pi/k on R2. At low-energy the configuration is described in terms of a 4+1D Super-Yang-Mills theory on a cone (R 2/Zk) with additional 2+1D degrees of freedom at the tip of the cone. Fractionally charged quasi-particles have a natural description in terms of BPS strings of the (2,0)-theory. We analyze the large k limit, where a smooth cigar-geometry provides an alternative description. In this framework a W-boson can be modeled as a bound state of k quasi-particles. The W-boson becomes a Q-ball, and it can be described by a soliton solution of BPS monopole equations on a certain auxiliary curved space. We show that axisymmetric solutions of these equations correspond to singular maps from AdS 3 to AdS2, and we

  6. Anomalous lightning activity over the Metropolitan Region of São Paulo due to urban effects

    Science.gov (United States)

    Farias, W. R. G.; Pinto, O., Jr.; Naccarato, K. P.; Pinto, I. R. C. A.

    2009-02-01

    A significant enhancement in the number of negative cloud-to-ground (CG) lightning and a decrease in the percentage of positive CG flashes are observed over the city of São Paulo, similar to observations in other large urban areas. Strong evidence indicates that this anomalous behavior results from several mechanisms related to the urban effect. In this paper, we investigated the importance of the air pollution using CG lightning data provided by the Brazilian lightning detection network (BrasilDAT) for a 6-year period (1999-2004). Due to the large variations in the CG lightning activity in response to different meteorological processes, it is not an easy task to infer the contribution of air pollution to the enhancement in the lightning activity. In order to overcome such difficulty, two approaches were considered: (1) the weekly variation of the number of days with lightning in comparison to the mean concentration of particulate matter (PM 10), as well as other thermodynamical parameters; (2) the variation of the number of CG flashes and the maximum storm flash rate per individual thunderstorm for different levels of pollution. The results of both analyses suggest that: first, the enhancement in the CG lightning activity during the week days over São Paulo metropolitan region is related to the PM 10 concentration (pollution); second, the PM 10 concentration tends to increase the lifetime of the storms and, in consequence, the number of flashes per storm, and not the flash rate of the thunderstorm; and third, the effect of the pollution in the enhancement of the CG lightning activity is probably less significant compared to the effect of the urban heat island.

  7. Solar Wind MHD Turbulence: Anomalous Scaling and Intermittency Effects in the Slow and Fast Wind

    Science.gov (United States)

    Salem, C.; Mangeney, A.; Bale, S. D.

    2007-12-01

    Although considerable progress has been made in the understanding of MHD turbulence over the past few decades through the analysis of in-situ solar wind data, two of the primary problems of solar wind MHD turbulence that still remain a puzzle are the nature of the nonlinear energy cascade, and the strong intermittent character of solar wind fluctuations in the inertial range. This intermittency modifies significantly the scaling exponents of actual power-law spectra, which are directly related to the physical nature of the energy cascade taking place in the solar wind. The identification of the most intermittent structures and their relation to dissipation represents then a crucial problem in the framework of turbulence. Anomalous scaling of both solar wind magnetic field and velocity fluctuations in the inertial range, as well as intermittency effects have recently been investigated in detail using Wavelet transforms on simultaneous WIND 3s resolution particle and magnetic field data from the 3DP and the MFi experiments respectively. Specifically, the Haar Wavelet transform is used to compute spectra, structure functions and probability distribution functions (PDFs). This powerful technique allows: (1) for a systematic study of intermittency effects on these spectra, structure functions and PDFs, thus for a clear determination of the actual scaling properties in the inertial range, and (2) for a direct and systematic identification of the most active, singular structures responsible for the intermittency in the solar wind. The analysis of structure functions and PDFs, as well as new results on the nature of the intermittent coherent structures will be presented. The turbulent properties and intermittency effects in different solar wind regimes will be also discussed.

  8. Experimental halls workshop summary

    International Nuclear Information System (INIS)

    Thorndike, A.

    1976-01-01

    A brief discussion is given of: (1) pros and cons of open areas as compared with enclosed halls; (2) experimental hall needs of ep, anti p p, and other options; (3) hall for the lepton detector; and, (4) hall for the hadron spectrometer

  9. Spin dynamics simulations of topological magnon insulators: From transverse current correlation functions to the family of magnon Hall effects

    Science.gov (United States)

    Mook, Alexander; Henk, Jürgen; Mertig, Ingrid

    2016-11-01

    We demonstrate theoretically that atomistic spin dynamics simulations of topological magnon insulators (TMIs) provide access to the magnon-mediated transport of both spin and heat. The TMIs, modeled by kagome ferromagnets with Dzyaloshinskii-Moriya interaction, exhibit nonzero transverse-current correlation functions from which conductivities are derived for the entire family of magnon Hall effects. Both longitudinal and transverse conductivities are studied in dependence on temperature and on an external magnetic field. A comparison between theoretical and experimental results for Cu(1,3-benzenedicarboxylate), a recently discovered TMI, is drawn.

  10. Nonlinear radiative heat transfer and Hall effects on a viscous fluid in a semi-porous curved channel

    Directory of Open Access Journals (Sweden)

    Z. Abbas

    2015-10-01

    Full Text Available In this paper, effects of Hall currents and nonlinear radiative heat transfer in a viscous fluid passing through a semi-porous curved channel coiled in a circle of radius R are analyzed. A curvilinear coordinate system is used to develop the mathematical model of the considered problem in the form partial differential equations. Similarity solutions of the governing boundary value problems are obtained numerically using shooting method. The results are also validated with the well-known finite difference technique known as the Keller-Box method. The analysis of the involved pertinent parameters on the velocity and temperature distributions is presented through graphs and tables.

  11. Observation of the Quantum Hall Effect in Confined Films of the Three-Dimensional Dirac Semimetal Cd3 As2

    Science.gov (United States)

    Schumann, Timo; Galletti, Luca; Kealhofer, David A.; Kim, Honggyu; Goyal, Manik; Stemmer, Susanne

    2018-01-01

    The magnetotransport properties of epitaxial films of Cd3 As2 , a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall effect. The sharp quantization demonstrates surface transport that is virtually free of parasitic bulk conduction and paves the way for novel quantum transport studies in this class of topological materials. Our results also demonstrate that heterostructuring approaches can be used to study and engineer quantum states in topological semimetals.

  12. Visualization of anomalous Ettingshausen effect in a ferromagnetic film: Direct evidence of different symmetry from spin Peltier effect

    Science.gov (United States)

    Seki, T.; Iguchi, R.; Takanashi, K.; Uchida, K.

    2018-04-01

    Spatial distribution of temperature modulation due to the anomalous Ettingshausen effect (AEE) is visualized in a ferromagnetic FePt thin film with in-plane and out-of-plane magnetizations using the lock-in thermography technique. Comparing the AEE of FePt with the spin Peltier effect (SPE) of a Pt/yttrium iron garnet junction provides direct evidence of different symmetries of AEE and SPE. Our experiments and numerical calculations reveal that the distribution of heat sources induced by AEE strongly depends on the direction of magnetization, leading to the remarkable different temperature profiles in the FePt thin film between the in-plane and perpendicularly magnetized configurations.

  13. Hall-Effect Thruster Simulations with 2-D Electron Transport and Hydrodynamic Ions

    Science.gov (United States)

    Mikellides, Ioannis G.; Katz, Ira; Hofer, Richard H.; Goebel, Dan M.

    2009-01-01

    A computational approach that has been used extensively in the last two decades for Hall thruster simulations is to solve a diffusion equation and energy conservation law for the electrons in a direction that is perpendicular to the magnetic field, and use discrete-particle methods for the heavy species. This "hybrid" approach has allowed for the capture of bulk plasma phenomena inside these thrusters within reasonable computational times. Regions of the thruster with complex magnetic field arrangements (such as those near eroded walls and magnets) and/or reduced Hall parameter (such as those near the anode and the cathode plume) challenge the validity of the quasi-one-dimensional assumption for the electrons. This paper reports on the development of a computer code that solves numerically the 2-D axisymmetric vector form of Ohm's law, with no assumptions regarding the rate of electron transport in the parallel and perpendicular directions. The numerical challenges related to the large disparity of the transport coefficients in the two directions are met by solving the equations in a computational mesh that is aligned with the magnetic field. The fully-2D approach allows for a large physical domain that extends more than five times the thruster channel length in the axial direction, and encompasses the cathode boundary. Ions are treated as an isothermal, cold (relative to the electrons) fluid, accounting for charge-exchange and multiple-ionization collisions in the momentum equations. A first series of simulations of two Hall thrusters, namely the BPT-4000 and a 6-kW laboratory thruster, quantifies the significance of ion diffusion in the anode region and the importance of the extended physical domain on studies related to the impact of the transport coefficients on the electron flow field.

  14. Broken SU(4) Symmetry and The Fractional Quantum Hall Effect in Graphene

    Science.gov (United States)

    Sodemann, Inti; MacDonald, Allan

    2014-03-01

    We describe a simple variational approach to understand the spin-valley broken symmetry states in the fractional quantum Hall regime of graphene. Our approach allows to predict the incompressible ground states and their charge gaps and is able to explain the observed differences between filling factor ranges | ν | normal which allows to tune the relative strength of Zeeman and valley symmetry breaking interactions. Supported by DOE Division of Materials Sciences and Engineering under grant DE-FG03-02ER45958 and by the Welch foundation under grant TBF1473.

  15. Digital data filtering in a Hall effect based angular position sensor

    OpenAIRE

    Solana Muñoz, Jorge

    2009-01-01

    Este proyecto empieza con el análisis de un sensor de efecto Hall como los estudiados en la asignatura Instrumentación Electrónica. Durante su estudio se pondrán en práctica algunos de los conocimientos adquiridos en ella. Posteriormente se entra en una fase de diseño de un sistema electrónico digital que procesará la señal procedente del sensor. En esta parte entran en juego conceptos de Sistemas Electrónicos Digitales necesarios para la elección de los bloques y las funciones lógicas oportu...

  16. Valley Hall effect in disordered monolayer MoS2 from first principles

    DEFF Research Database (Denmark)

    Olsen, Thomas; Souza, Ivo

    2015-01-01

    Electrons in certain two-dimensional crystals possess a pseudospin degree of freedom associated with the existence of two inequivalent valleys in the Brillouin zone. If, as in monolayer MoS2, inversion symmetry is broken and time-reversal symmetry is present, equal and opposite amounts of k......-space Berry curvature accumulate in each of the two valleys. This is conveniently quantified by the integral of the Berry curvature over a single valley-the valley Hall conductivity. We generalize this definition to include contributions from disorder described with the supercell approach, by mapping...

  17. Performance, Facility Pressure Effects, and Stability Characterization Tests of NASA's Hall Effect Rocket with Magnetic Shielding Thruster

    Science.gov (United States)

    Kamhawi, Hani; Huang, Wensheng; Haag, Thomas; Yim, John; Herman, Daniel; Williams, George; Gilland, James; Peterson, Peter; Hofer, Richard; Mikellides, Ioannis

    2016-01-01

    NASAs Hall Effect Rocket with Magnetic Shielding (HERMeS) 12.5 kW Technology Demonstration Unit-1 (TDU-1) Hall thruster has been the subject of extensive technology maturation in preparation for flight system development. Part of the technology maturation effort included experimental evaluation of the TDU-1 thruster with conducting and dielectric front pole cover materials in two different electrical configurations. A graphite front pole cover thruster configuration with the thruster body electrically tied to cathode and an alumina front pole cover thruster configuration with the thruster body floating were evaluated. Both configurations were also evaluated at different facility background pressure conditions to evaluate background pressure effects on thruster operation. Performance characterization tests found that higher thruster performance was attained with the graphite front pole cover configuration with the thruster electrically tied to cathode. A total thrust efficiency of 68 and a total specific impulse of 2,820 s was demonstrated at a discharge voltage of 600 V and a discharge power of 12.5 kW. Thruster stability regimes were characterized with respect to the thruster discharge current oscillations and with maps of the current-voltage-magnetic field (IVB). Analysis of TDU-1 discharge current waveforms found that lower normalized discharge current peak-to-peak and root mean square magnitudes were attained when the thruster was electrically floated with alumina front pole covers. Background pressure effects characterization tests indicated that the thruster performance and stability was mostly invariant to changes in the facility background pressure for vacuum chamber pressure below 110-5 Torr-Xe (for thruster flow rate above 8 mgs). Power spectral density analysis of the discharge current waveform showed that increasing the vacuum chamber background pressure resulted in a higher discharge current dominant frequency. Finally the IVB maps of the TDU-1

  18. Paired Hall states

    International Nuclear Information System (INIS)

    Greiter, M.

    1992-01-01

    This dissertation contains a collection of individual articles on various topics. Their significance in the corresponding field as well as connections between them are emphasized in a general and comprehensive introduction. In the first article, the author explores the consequences for macroscopic effective Lagrangians of assuming that the momentum density is proportional to the flow of conserved current. The universal corrections obtained for the macroscopic Lagrangian of a superconductor describe the London Hall effect, and provide a fully consistent derivation of it. In the second article, a heuristic principle is proposed for quantized Hall states: the existence and incompressibility of fractionally quantized Hall states is explained by an argument based on an adiabatic localization of magnetic flux, the process of trading uniform flux for an equal amount of fictitious flux attached to the particles. This principle is exactly implemented in the third article. For a certain class of model Hamiltonians, the author obtains Laughlin's Jastrow type wave functions explicitly from a filled Landau level, by smooth extrapolation in quantum statistics. The generalization of this analysis to the torus geometry shows that theorems restricting the possibilities of quantum statistics on closed surfaces are circumvented in the presence of a magnetic field. In the last article, the existence is proposed of a novel incompressible quantum liquid, a paired Hall state, at a half filled Landau level. This state arises adiabatically from free fermions in zero magnetic field, and reduces to a state previously proposed by Halperin in the limit of tightly bound pairs. It supports unusual excitations, including neutral fermions and charge e/4 anyons with statistical parameter θ = π/8

  19. Field-controllable Spin-Hall Effect of Light in Optical Crystals: A Conoscopic Mueller Matrix Analysis.

    Science.gov (United States)

    Samlan, C T; Viswanathan, Nirmal K

    2018-01-31

    Electric-field applied perpendicular to the direction of propagation of paraxial beam through an optical crystal dynamically modifies the spin-orbit interaction (SOI), leading to the demonstration of controllable spin-Hall effect of light (SHEL). The electro- and piezo-optic effects of the crystal modifies the radially symmetric spatial variation in the fast-axis orientation of the crystal, resulting in a complex pattern with different topologies due to the symmetry-breaking effect of the applied field. This introduces spatially-varying Pancharatnam-Berry type geometric phase on to the paraxial beam of light, leading to the observation of SHEL in addition to the spin-to-vortex conversion. A wave-vector resolved conoscopic Mueller matrix measurement and analysis provides a first glimpse of the SHEL in the biaxial crystal, identified via the appearance of weak circular birefringence. The emergence of field-controllable fast-axis orientation of the crystal and the resulting SHEL provides a new degree of freedom for affecting and controlling the spin and orbital angular momentum of photons to unravel the rich underlying physics of optical crystals and aid in the development of active photonic spin-Hall devices.

  20. Objective and perceptual evaluation of distance-dependent scattered sound effects in a small variable-acoustics hall.

    Science.gov (United States)

    Shtrepi, Louena; Astolfi, Arianna; D'Antonio, Gianluca; Guski, Martin

    2016-11-01

    Performance spaces are characterized by a complex sound field, due to the presence of absorptive and diffusive surfaces. In situ evaluations of the acoustic effects that these surfaces have on the objective acoustic parameters and on sound perception have not yet been fully understood. To this aim, acoustic measurements have been performed in a variable-acoustic concert hall, the Espace de Projection, at the Institut de Recherche et Coordination Acoustique/Musique. These measurements have allowed the effects of one single wall to be determined. A diffusive and a reflective condition of one of the long lateral walls of the shoebox-like hall have been considered, while the other surfaces have been fixed in absorptive mode. Measurements have been carried out at different distances from the test wall, using an artificial head and an array of omnidirectional microphones. Objective acoustic parameters, such as early decay time, reverberation time (T 30 ), clarity (C 80 ), definition (D 50 ), and interaural cross correlation, have been compared between both conditions. In addition to the objective indexes, a perceptual evaluation has been performed using listening tests that had the purpose of determining the maximum distance from a diffusive surface at which acoustic scattering effects are still audible.

  1. Quadratic dependence of the spin-induced Hall voltage on longitudinal electric field

    International Nuclear Information System (INIS)

    Miah, M. Idrish

    2008-01-01

    The effect of optically induced spins in semiconductors in the low electric field is investigated. Here we report an experiment which investigates the effect of a longitudinal electric field (E) on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a spin-induced anomalous Hall voltage (V AH ) resulting from spin-carrier electrons accumulating at the transverse edges of the sample. Unlike the ordinary Hall effect, a quadratic dependence of V AH on E is observed, which agrees with the results of the recent theoretical investigations. It is also found that V AH depends on the doping density. The results are discussed

  2. Quadratic dependence of the spin-induced Hall voltage on longitudinal electric field

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M. Idrish [Nanoscale Science and Technology Centre, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); School of Biomolecular and Physical Sciences, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong 4331 (Bangladesh)], E-mail: m.miah@griffith.edu.au

    2008-10-15

    The effect of optically induced spins in semiconductors in the low electric field is investigated. Here we report an experiment which investigates the effect of a longitudinal electric field (E) on the spin-polarized carriers generated by a circularly polarized light in semiconductors. Our experiment observes the effect as a spin-induced anomalous Hall voltage (V{sub AH}) resulting from spin-carrier electrons accumulating at the transverse edges of the sample. Unlike the ordinary Hall effect, a quadratic dependence of V{sub AH} on E is observed, which agrees with the results of the recent theoretical investigations. It is also found that V{sub AH} depends on the doping density. The results are discussed.

  3. Probing bulk physics in the 5/2 fractional quantum Hall effect using the Corbino geometry

    Science.gov (United States)

    Schmidt, Benjamin; Bennaceur, Keyan; Bilodeau, Simon; Gaucher, Samuel; Lilly, Michael; Reno, John; Pfeiffer, Loren; West, Ken; Reulet, Bertrand; Gervais, Guillaume

    We present two- and four-point Corbino geometry transport measurements in the second Landau level in GaAs/AlGaAs heterostructures. By avoiding edge transport, we are able to directly probe the physics of the bulk quasiparticles in fractional quantum Hall (FQH) states including 5/2. Our highest-quality sample shows stripe and bubble phases in high Landau levels, and most importantly well-resolved FQH minima in the second Landau level. We report Arrhenius-type fits to the activated conductance, and find that σ0 agrees well with theory and existing Hall geometry data in the first Landau level, but not in the second Landau level. We will discuss the advantages the Corbino geometry could bring to various experiments designed to detect the non-Abelian entropy at 5/2, and our progress towards realizing those schemes. The results of these experiments could complement interferometry and other edge-based measurements by providing direct evidence for non-Abelian behaviour of the bulk quasiparticles. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL8500.

  4. Comparisons in Performance of Electromagnet and Permanent-Magnet Cylindrical Hall-Effect Thrusters

    Science.gov (United States)

    Polzin, K. A.; Raitses, Y.; Gayoso, J. C.; Fisch, N. J.

    2010-01-01

    Three different low-power cylindrical Hall thrusters, which more readily lend themselves to miniaturization and low-power operation than a conventional (annular) Hall thruster, are compared to evaluate the propulsive performance of each. One thruster uses electromagnet coils to produce the magnetic field within the discharge channel while the others use permanent magnets, promising power reduction relative to the electromagnet thruster. A magnetic screen is added to the permanent magnet thruster to improve performance by keeping the magnetic field from expanding into space beyond the exit of the thruster. The combined dataset spans a power range from 50-350 W. The thrust levels over this range were 1.3-7.3 mN, with thruster efficiencies and specific impulses spanning 3.5-28.7% and 400-1940 s, respectively. The efficiency is generally higher for the permanent magnet thruster with the magnetic screen, while That thruster s specific impulse as a function of discharge voltage is comparable to the electromagnet thruster.

  5. Enhancement of spin Hall effect induced torques for current-driven magnetic domain wall motion: Inner interface effect

    KAUST Repository

    Bang, Do

    2016-05-23

    We investigate the current-induced domain wall motion in perpendicular magnetized Tb/Co wires with structure inversion asymmetry and different layered structures. We find that the critical current density to drive domain wall motion strongly depends on the layered structure. The lowest critical current density ∼15MA/cm2 and the highest slope of domain wall velocity curve are obtained for the wire having thin Co sublayers and more inner Tb/Co interfaces, while the largest critical current density ∼26MA/cm2 required to drive domain walls is observed in the Tb-Co alloy magnetic wire. It is found that the Co/Tb interface contributes negligibly to Dzyaloshinskii-Moriya interaction, while the effective spin-orbit torque strongly depends on the number of Tb/Co inner interfaces (n). An enhancement of the antidamping torques by extrinsic spin Hall effect due to Tb rare-earth impurity-induced skew scattering is suggested to explain the high efficiency of current-induced domain wall motion.

  6. The transformation of equation of the characteristic curves to widen the working area of the hall effect sensor

    Science.gov (United States)

    Darmawan, D.; Rahmawati, F.; Suprayogi; Suhendi, A.

    2017-05-01

    The ability of a measuring instrument is determined by the characteristics of the sensor used. One of the important characteristics of a sensor is its area of work. The working area of a sensor is determined by a linear relationship between the physical quantities to be measured with the actual measured physical quantity. A narrow sensor working area will limit the use of the instruments. Transformation equation of sensor characteristic curve is expected to widen the working area of this sensor. In this study, the magnitude of a magnetic field is used as an example of the physical quantity to be measured. Hall Effect sensors are used as sensing elements and the transformation equation performed on the sensor characteristic curve. Hall Effect sensor which is used as the object of widening the area of work is UGN3503UA while the reference sensor is A1302UA. The result of this equation transformation is embedded inside a micro-controller. The interpolation value of the magnetic field, as the result of the characteristic curve transformation, which compared to the actual value of the magnetic field provides an average relative error of measurement results of 3.83 %.

  7. Using permalloy based planar hall effect sensors to capture and detect superparamagnetic beads for lab on a chip applications

    International Nuclear Information System (INIS)

    Volmer, Marius; Avram, Marioara

    2015-01-01

    Experimental studies have been carried out on planar Hall effect (PHE) sensors used to detect magnetic nanoparticles employed as labels for biodetection applications. Disk shaped sensors, 1 mm diameter, were structured on Permalloy film, 20 nm thick. To control the sensor magnetisation state and thus the field sensitivity and linearity, a DC biasing field has been applied parallel to the driving current. Maghemite nanoparticles (10 nm) functionalised with Polyethylene glycol (PEG) 6000 were immobilised over the sensor surface using particular magnetisation state and applied magnetic fields. In order to obtain a higher response from the magnetic nanoparticles, it was used a detection setup which allows the application of magnetic fields larger than 100 Oe but avoiding saturation of the PHE signal. Based on this setup, two field scanning methods are presented in this paper. During our experiments, low magnetic moments, of about 1.87×10 −5 emu, have been easily detected. This value corresponds to a mass of 9.35 µg of maghemite nanoparticles functionalised with PEG 6000. The results suggest that this type of structure is feasible for building low cost micrometer sized PHE sensors to be used for high-resolution bio sensing applications. - Highlights: • Disk-shaped Permalloy planar Hall effect sensors have been obtained and tested. • Two field scanning methods have been proposed. • The magnetic nanoparticles can be trapped on the sensor surface. • High detection sensitivity has been obtained

  8. Thermally Driven Pure Spin and Valley Currents via the Anomalous Nernst Effect in Monolayer Group-VI Dichalcogenides

    DEFF Research Database (Denmark)

    Yu, Xiao-Qin; Zhu, Zhen-Gang; Su, Gang

    2015-01-01

    The spin and valley-dependent anomalous Nernst effects are analyzed for monolayer MoS2 and other group-VI dichalcogenides. We find that pure spin and valley currents can be generated perpendicular to the applied thermal gradient in the plane of these two-dimensional materials. This effect provides...... a versatile platform for applications of spin caloritronics. A spin current purity factor is introduced to quantify this effect. When time reversal symmetry is violated, e.g., two-dimensional materials on an insulating magnetic substrate, a dip-peak feature appears for the total Nernst coefficient...

  9. Simulating chiral magnetic effect and anomalous transport phenomena in the pre-equilibrium stages of heavy-ion collisions

    Science.gov (United States)

    Mace, Mark; Mueller, Niklas; Schlichting, Sören; Sharma, Sayantan

    2017-11-01

    We present a first principles approach to study the Chiral Magnetic Effect during the pre-equilibrium stage of a heavy-ion collision. We discuss the dynamics of the Chiral Magnetic Effect and Chiral Magnetic Wave based on real-time lattice simulations with dynamical (Wilson and Overlap) fermions simultaneously coupled to color and electromagnetic fields. While for light quarks we observe a dissipation-less transport of charges as in anomalous hydrodynamics, we demonstrate that for heavier quarks the effects of explicit chiral symmetry breaking lead to a significant reduction of the associated currents.

  10. Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition

    International Nuclear Information System (INIS)

    Roro, K T; Dangbegnon, J K; Sivaraya, S; Westraadt, J E; Neethling, J H; Leitch, A W R; Botha, J R; Kassier, G H

    2008-01-01

    The electrical properties of zinc oxide (ZnO) thin films of various thicknesses (0.3–4.4 µm) grown by metalorganic chemical vapour deposition on glass substrates have been studied by using temperature-dependent Hall-effect (TDH) measurements in the 18–300 K range. The high quality of the layers has been confirmed with x-ray diffraction, transmission electron microscopy, scanning electron microscopy and photoluminescence techniques. TDH measurements indicate the presence of a degenerate layer which significantly influences the low-temperature data. It is found that the measured mobility generally increases with increasing layer thickness, reaching a value of 120 cm 2 V −1 s −1 at room temperature for the 4.4 µm thick sample. The lateral grain size of the layers is also found to increase with thickness indicating a clear correlation between the size of the surface grains and the electrical properties of corresponding films. Theoretical fits to the Hall data suggest that the bulk conduction of the layers is dominated by a weakly compensated donor with activation energy in the 33–41 meV range and concentration of the order of 10 17 cm −3 , as well as a total acceptor concentration of mid-10 15 cm −3 . Grain boundary scattering is found to be an important limiting factor of the mobility throughout the temperature range considered

  11. High Field Hall Effect and Critical Physics in BaFe2(As1-xPx)2

    Science.gov (United States)

    Hayes, Ian; Ramshaw, Brad; Lopez, Gilbert; Analytis, James

    Thirty years after the discovery of the cuprates, the precise nature of the electronic state that leads to very high superconducting transition temperatures is still a mystery. A significant clue has come from the charge transport properties of these systems, which are similar to those seen in quantum critical metals. These properties include a T-linear resistivity and a cotangent of the Hall angle that grows as T-squared. However, it is difficult to say whether these properties are accidental or essential to the physics of High-Tc superconductivity. The iron-based high-Tc superconductors provide an important point of comparison on this question. I will report on high-field magnetoresistance measurements, including Hall effect data up to 65 Tesla, on the iron-pnictide compound BaFe2(As1-xPx)2. Although the presence of multiple bands in these materials may lead us to expect otherwise, the charge transport in these materials reflects many of the universal properties of quantum critical metals that also appear in the cuprates, suggesting that these properties are intimately connected to the physics of High-Tc superconductivity.

  12. Tunability of the Quantum Spin Hall Effect in Bi(110) Films: Effects of Electric Field and Strain Engineering.

    Science.gov (United States)

    Li, Sheng-Shi; Ji, Wei-Xiao; Li, Ping; Hu, Shu-Jun; Cai, Li; Zhang, Chang-Wen; Yan, Shi-Shen

    2017-06-28

    The quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices due to their robust gapless edge states inside insulating bulk gap. However, the currently discussed QSH insulators usually suffer from ultrahigh vacuum or low temperature due to the small bulk gap, which limits their practical applications. Searching for large-gap QSH insulators is highly desirable. Here, the tunable QSH state of a Bi(110) films with a black phosphorus (BP) structure, which is robust against structural deformation and electric field, is explored by first-principles calculations. It is found that the two-monolayer BP-Bi(110) film obtains a tunable large bulk gap by strain engineering and its QSH effect shows a favorable robustness within a wide range of combinations of in-plane and out-of-plane strains, although a single in-plane compression or out-of-plane extension may restrict the topological phase due to the self-doping effect. More interestingly, in view of biaxial strain, two competing physics on band topology induced by bonding-antibonding and p x,y -p z band inversions are obtained. Meanwhile, the QSH effect can be persevered under an electric field of up to 0.9 V/Å. Moreover, with appropriate in-plane strain engineering, a nontrivial topological phase in a four-monolayer BP-Bi(110) film is identified. Our findings suggest that these two-dimensional BP-Bi(110) films are ideal platforms of the QSH effect for low-power dissipation devices.

  13. Spin Hall and spin swapping torques in diffusive ferromagnets

    KAUST Repository

    Pauyac, C. O.

    2017-12-08

    A complete set of the generalized drift-diffusion equations for a coupled charge and spin dynamics in ferromagnets in the presence of extrinsic spin-orbit coupling is derived from the quantum kinetic approach, covering major transport phenomena, such as the spin and anomalous Hall effects, spin swapping, spin precession and relaxation processes. We argue that the spin swapping effect in ferromagnets is enhanced due to spin polarization, while the overall spin texture induced by the interplay of spin-orbital and spin precessional effects displays a complex spatial dependence that can be exploited to generate torques and nucleate/propagate domain walls in centrosymmetric geometries without use of external polarizers, as opposed to the conventional understanding of spin-orbit mediated torques.

  14. Quantum Hall effect on top and bottom surface states of topological insulator (Bi1-xSbx)2Te3 films.

    Science.gov (United States)

    Yoshimi, R; Tsukazaki, A; Kozuka, Y; Falson, J; Takahashi, K S; Checkelsky, J G; Nagaosa, N; Kawasaki, M; Tokura, Y

    2015-04-14

    The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in (Bi1-xSbx)2Te3 films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ±1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.

  15. The STEM Lecture Hall: A Study of Effective Instructional Practices for Diverse Learners

    Science.gov (United States)

    Reimer, Lynn Christine

    First-generation, low-income, underrepresented minority (URM) and female undergraduates are matriculating into science, technology, engineering, and math (STEM) majors at unprecedented levels. However, a disproportionate number of these students end up graduating in non-STEM disciplines. Attrition rates have been observed to spike in conjunction with introductory STEM courses in chemistry, biology, and physics. These "gateway" courses tend to be housed in large, impersonal lecture halls. First-generation and URM students struggle in this environment, possibly because of instructors' reliance on lecture-based content delivery and rote memorization. Recent social psychological studies suggest the problem may be related to cultural mismatch, or misalignment between independent learning norms typical of American universities and interdependent learning expectancies for first-generation and URM students. Value-affirming and utility-value interventions yield impressive academic achievement gains for these students. These findings overlap with a second body of literature on culturally responsive instruction. Active gateway learning practices that emphasize interactive instruction, frequent assessment, and epistemological instruction can be successful because of their propensity to incorporate values affirming and utility-value techniques. The present study observed instruction for gateway STEM courses over a three-year period at the University of California, Irvine (N = 13,856 undergraduates in 168 courses). Exploratory polychoric factor analysis was used to identify latent variables for observational data on gateway STEM instructional practices. Variables were regressed on institutional student data. Practices implemented in large lecture halls fall into three general categories: Faculty-Student Interaction, Epistemological Instruction, and Peer Interaction . The present study found that Faculty-Student Interaction was negatively associated with student outcomes for

  16. Hall Effect on Falkner—Skan Boundary Layer Flow of FENE-P Fluid over a Stretching Sheet

    Science.gov (United States)

    Maqbool, Khadija; Sohail, Ayesha; Manzoor, Naeema; Ellahi, Rahmat

    2016-11-01

    The Falkner—Skan boundary layer steady flow over a flat stretching sheet is investigated in this paper. The mathematical model consists of continuity and the momentum equations, while a new model is proposed for MHD Finitely Extensible Nonlinear Elastic Peterlin (FENE-P) fluid. The effects of Hall current with the variation of intensity of non-zero pressure gradient are taken into account. The governing partial differential equations are first transformed to ordinary differential equations using appropriate similarity transformation and then solved by Adomian decomposition method (ADM). The obtained results are validated by generalized collocation method (GCM) and found to be in good agreement. Effects of pertinent parameters are discussed through graphs and tables. Comparison with the existing studies is made as a limiting case of the considered problem at the end.

  17. Probing Symmetry and Disorder Effects in the Fractional Quantum Hall States of the Second Landau Level

    Science.gov (United States)

    Kleinbaum, Ethan I.

    Electrons confined to two dimensions, cooled to cryogenic temperatures, and placed in a strong perpendicular magnetic field exhibit a set of ground states referred to as the fractional quantum Hall states (FQHS). The FQHSs forming in the region called the second Landau level are some of the most exciting states as several theories predict that they are very different from the well understood FQHS in the lowest Landau level. Nonetheless, the nature of these FQHSs continue to evade understanding. In this thesis, a unique ultra-low temperature setup is used to examine the FQHSs of the second Landau level in regimes which have not been studied previously. Additionally, a new instrument was developed for future studies of these exciting FQHSs. In Chapter 2, I describe measurements in a high quality sample in the region of the second Landau level referred to as the upper spin branch at a factor of two lower temperatures than previous measurements in this region. In this region we find a new FQHS at the filling factor nu = 3+1/3. A quantitative study of this new and other FQHS in the upper spin branch reveals a surprising relationship: the relative magnitudes of the energy gaps of the nu = 3+1/3 and 3+1/5 states are reversed when compared to the counterpart states in the lower spin branch at nu = 2+1/3 and 2+1/5. We demonstrate that this reversal is only found to occur in the upper spin branch and cannot be understood within the existing theories. Our results suggest the possibility of new types of FQHSs in this region. In Chapter 3, I examine the even denominator FQHSs at nu = 5/2 and nu = 7/2 in a series of samples with intentionally added alloy disorder. The energy gap of both of these states is suppressed with increased alloy content. Unexpectedly, in contrast to samples with no added disorder, in samples with intentionally added alloy disorder we find that the measured energy gap of the nu = 5/2 FQHS displays a strong correlation with the mobility. Of further

  18. Novel concepts in Hall sensors

    Science.gov (United States)

    Mani, R. G.

    1996-03-01

    Hall effect devices are widely used as position sensors and contactless switches in applications ranging from electric motors to soft drink machines and automobiles. Such devices typically operate in an adverse environment where offset voltages originating from various physical effects limit the effective sensitivity of the sensor to the weak magnetic field (B device that automatically reduces such spurious offsets is desirable because improved 'signal to offset' would relax manufacturing tolerances and other constraints within the sensor system. Here, we examine some techniques and sensor configurations (R. G. Mani, K. von Klitzing, F. Jost, K. Marx, S. Lindenkreuz, and H. P. Trah, Appl. Phys. Lett. 67, 2223, 1995.) based on the so called 'anti Hall bar' geometry that promise the possibility of a Silicon based Hall sensor with a field equivalent offset well below 1 mT.

  19. Novel optical probe for quantum Hall system

    Indian Academy of Sciences (India)

    to 8 T using SPV spectroscopy. Keywords. Surface photovoltage spectroscopy; quantum Hall effect; Landau levels; edge states. PACS Nos 73.43.-f; 07.60.-j; 73.43.Fj. 1. Introduction. Integer quantum Hall effect (QHE) arises from quantization of energy of two- dimensional electron gas (2DEG) under perpendicular magnetic ...

  20. Chip-Based Measurements of Brownian Relaxation of Magnetic Beads Using a Planar Hall Effect Magnetic Field Sensor

    DEFF Research Database (Denmark)

    Østerberg, Frederik Westergaard; Dalslet, Bjarke Thomas; Snakenborg, Detlef

    2010-01-01

    We present a simple 'click-on' fluidic system with integrated electrical contacts, which is suited for electrical measurements on chips in microfluidic systems. We show that microscopic magnetic field sensors based on the planar Hall effect can be used for detecting the complex magnetic response...... using only the self-field arising from the bias current applied to the sensors as excitation field. We present measurements on a suspension of magnetic beads with a nominal diameter of 250 nm vs. temperature and find that the observations are consistent with the Cole-Cole model for Brownian relaxation...... with a constant hydrodynamic bead diameter when the temperature dependence of the viscosity of water is taken into account. These measurements demonstrate the feasibility of performing measurements of the Brownian relaxation response in a lab-on-a-chip system and constitute the first step towards an integrated...