WorldWideScience

Sample records for annealing

  1. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  2. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  3. Cascade annealing: an overview

    International Nuclear Information System (INIS)

    Doran, D.G.; Schiffgens, J.O.

    1976-04-01

    Concepts and an overview of radiation displacement damage modeling and annealing kinetics are presented. Short-term annealing methodology is described and results of annealing simulations performed on damage cascades generated using the Marlowe and Cascade programs are included. Observations concerning the inconsistencies and inadequacies of current methods are presented along with simulation of high energy cascades and simulation of longer-term annealing

  4. Rapid thermal pulse annealing

    International Nuclear Information System (INIS)

    Miller, M.G.; Koehn, B.W.; Chaplin, R.L.

    1976-01-01

    Characteristics of recovery processes have been investigated for cases of heating a sample to successively higher temperatures by means of isochronal annealing or by using a rapid pulse annealing. A recovery spectra shows the same features independent of which annealing procedure is used. In order to determine which technique provides the best resolution, a study was made of how two independent first-order processes are separated for different heating rates and time increments of the annealing pulses. It is shown that the pulse anneal method offers definite advantages over isochronal annealing when annealing for short time increments. Experimental data by means of the pulse anneal techniques are given for the various substages of stage I of aluminium. (author)

  5. Infrared thermal annealing device

    International Nuclear Information System (INIS)

    Gladys, M.J.; Clarke, I.; O'Connor, D.J.

    2003-01-01

    A device for annealing samples within an ultrahigh vacuum (UHV) scanning tunneling microscopy system was designed, constructed, and tested. The device is based on illuminating the sample with infrared radiation from outside the UHV chamber with a tungsten projector bulb. The apparatus uses an elliptical mirror to focus the beam through a sapphire viewport for low absorption. Experiments were conducted on clean Pd(100) and annealing temperatures in excess of 1000 K were easily reached

  6. Reactor pressure vessel thermal annealing

    International Nuclear Information System (INIS)

    Lee, A.D.

    1997-01-01

    The steel plates and/or forgings and welds in the beltline region of a reactor pressure vessel (RPV) are subject to embrittlement from neutron irradiation. This embrittlement causes the fracture toughness of the beltline materials to be less than the fracture toughness of the unirradiated material. Material properties of RPVs that have been irradiated and embrittled are recoverable through thermal annealing of the vessel. The amount of recovery primarily depends on the level of the irradiation embrittlement, the chemical composition of the steel, and the annealing temperature and time. Since annealing is an option for extending the service lives of RPVs or establishing less restrictive pressure-temperature (P-T) limits; the industry, the Department of Energy (DOE) and the Nuclear Regulatory Commission (NRC) have assisted in efforts to determine the viability of thermal annealing for embrittlement recovery. General guidance for in-service annealing is provided in American Society for Testing and Materials (ASTM) Standard E 509-86. In addition, the American Society of Mechanical Engineers (ASME) Code Case N-557 addresses annealing conditions (temperature and duration), temperature monitoring, evaluation of loadings, and non-destructive examination techniques. The NRC thermal annealing rule (10 CFR 50.66) was approved by the Commission and published in the Federal Register on December 19, 1995. The Regulatory Guide on thermal annealing (RG 1.162) was processed in parallel with the rule package and was published on February 15, 1996. RG 1.162 contains a listing of issues that need to be addressed for thermal annealing of an RPV. The RG also provides alternatives for predicting re-embrittlement trends after the thermal anneal has been completed. This paper gives an overview of methodology and recent technical references that are associated with thermal annealing. Results from the DOE annealing prototype demonstration project, as well as NRC activities related to the

  7. Placement by thermodynamic simulated annealing

    International Nuclear Information System (INIS)

    Vicente, Juan de; Lanchares, Juan; Hermida, Roman

    2003-01-01

    Combinatorial optimization problems arise in different fields of science and engineering. There exist some general techniques coping with these problems such as simulated annealing (SA). In spite of SA success, it usually requires costly experimental studies in fine tuning the most suitable annealing schedule. In this Letter, the classical integrated circuit placement problem is faced by Thermodynamic Simulated Annealing (TSA). TSA provides a new annealing schedule derived from thermodynamic laws. Unlike SA, temperature in TSA is free to evolve and its value is continuously updated from the variation of state functions as the internal energy and entropy. Thereby, TSA achieves the high quality results of SA while providing interesting adaptive features

  8. Influence of alloying and secondary annealing on anneal hardening ...

    Indian Academy of Sciences (India)

    Unknown

    Influence of alloying and secondary annealing on anneal hardening effect at sintered copper alloys. SVETLANA NESTOROVIC. Technical Faculty Bor, University of Belgrade, Bor, Yugoslavia. MS received 11 February 2004; revised 29 October 2004. Abstract. This paper reports results of investigation carried out on sintered ...

  9. DOE's annealing prototype demonstration projects

    International Nuclear Information System (INIS)

    Warren, J.; Nakos, J.; Rochau, G.

    1997-01-01

    One of the challenges U.S. utilities face in addressing technical issues associated with the aging of nuclear power plants is the long-term effect of plant operation on reactor pressure vessels (RPVs). As a nuclear plant operates, its RPV is exposed to neutrons. For certain plants, this neutron exposure can cause embrittlement of some of the RPV welds which can shorten the useful life of the RPV. This RPV embrittlement issue has the potential to affect the continued operation of a number of operating U.S. pressurized water reactor (PWR) plants. However, RPV material properties affected by long-term irradiation are recoverable through a thermal annealing treatment of the RPV. Although a dozen Russian-designed RPVs and several U.S. military vessels have been successfully annealed, U.S. utilities have stated that a successful annealing demonstration of a U.S. RPV is a prerequisite for annealing a licensed U.S. nuclear power plant. In May 1995, the Department of Energy's Sandia National Laboratories awarded two cost-shared contracts to evaluate the feasibility of annealing U.S. licensed plants by conducting an anneal of an installed RPV using two different heating technologies. The contracts were awarded to the American Society of Mechanical Engineers (ASME) Center for Research and Technology Development (CRTD) and MPR Associates (MPR). The ASME team completed its annealing prototype demonstration in July 1996, using an indirect gas furnace at the uncompleted Public Service of Indiana's Marble Hill nuclear power plant. The MPR team's annealing prototype demonstration was scheduled to be completed in early 1997, using a direct heat electrical furnace at the uncompleted Consumers Power Company's nuclear power plant at Midland, Michigan. This paper describes the Department's annealing prototype demonstration goals and objectives; the tasks, deliverables, and results to date for each annealing prototype demonstration; and the remaining annealing technology challenges

  10. Simulated annealing and circuit layout

    NARCIS (Netherlands)

    Aarts, E.H.L.; Laarhoven, van P.J.M.

    1991-01-01

    We discuss the problem of approximately sotvlng circuit layout problems by simulated annealing. For this we first summarize the theoretical concepts of the simulated annealing algorithm using Ihe theory of homogeneous and inhomogeneous Markov chains. Next we briefly review general aspects of the

  11. Radiation annealing in cuprous oxide

    DEFF Research Database (Denmark)

    Vajda, P.

    1966-01-01

    Experimental results from high-intensity gamma-irradiation of cuprous oxide are used to investigate the annealing of defects with increasing radiation dose. The results are analysed on the basis of the Balarin and Hauser (1965) statistical model of radiation annealing, giving a square...

  12. Mathematical foundation of quantum annealing

    International Nuclear Information System (INIS)

    Morita, Satoshi; Nishimori, Hidetoshi

    2008-01-01

    Quantum annealing is a generic name of quantum algorithms that use quantum-mechanical fluctuations to search for the solution of an optimization problem. It shares the basic idea with quantum adiabatic evolution studied actively in quantum computation. The present paper reviews the mathematical and theoretical foundations of quantum annealing. In particular, theorems are presented for convergence conditions of quantum annealing to the target optimal state after an infinite-time evolution following the Schroedinger or stochastic (Monte Carlo) dynamics. It is proved that the same asymptotic behavior of the control parameter guarantees convergence for both the Schroedinger dynamics and the stochastic dynamics in spite of the essential difference of these two types of dynamics. Also described are the prescriptions to reduce errors in the final approximate solution obtained after a long but finite dynamical evolution of quantum annealing. It is shown there that we can reduce errors significantly by an ingenious choice of annealing schedule (time dependence of the control parameter) without compromising computational complexity qualitatively. A review is given on the derivation of the convergence condition for classical simulated annealing from the view point of quantum adiabaticity using a classical-quantum mapping

  13. Management of the Bohunice RPVs annealing procedures

    International Nuclear Information System (INIS)

    Repka, M.

    1994-01-01

    The program of annealing regeneration procedure of RPVs units 1 and 2 of NPP V-1 (EBO) realization in the year 1993, is the topic of this paper. In the paper the following steps are described in detail: the preparation works, the annealing procedure realization schedule and safety management: starting with zero conditions, assembling of annealing apparatus, annealing procedure, cooling down and disassembling procedure of annealing apparatus. At the end the programs of annealing of both RPVs including the dosimetry measurements are discussed and evaluated. (author). 3 figs

  14. Global optimization and simulated annealing

    NARCIS (Netherlands)

    Dekkers, A.; Aarts, E.H.L.

    1988-01-01

    In this paper we are concerned with global optimization, which can be defined as the problem of finding points on a bounded subset of Rn in which some real valued functionf assumes its optimal (i.e. maximal or minimal) value. We present a stochastic approach which is based on the simulated annealing

  15. Ensemble annealing of complex physical systems

    OpenAIRE

    Habeck, Michael

    2015-01-01

    Algorithms for simulating complex physical systems or solving difficult optimization problems often resort to an annealing process. Rather than simulating the system at the temperature of interest, an annealing algorithm starts at a temperature that is high enough to ensure ergodicity and gradually decreases it until the destination temperature is reached. This idea is used in popular algorithms such as parallel tempering and simulated annealing. A general problem with annealing methods is th...

  16. Pattern Laser Annealing by a Pulsed Laser

    Science.gov (United States)

    Komiya, Yoshio; Hoh, Koichiro; Murakami, Koichi; Takahashi, Tetsuo; Tarui, Yasuo

    1981-10-01

    Preliminary experiments with contact-type pattern laser annealing were made for local polycrystallization of a-Si, local evaporation of a-Si and local formation of Ni-Si alloy. These experiments showed that the mask patterns can be replicated as annealed regions with a resolution of a few microns on substrates. To overcome shortcomings due to the contact type pattern annealing, a projection type reduction pattern laser annealing system is proposed for resistless low temperature pattern forming processes.

  17. Rapid thermal annealing of phosphorus implanted silicon

    International Nuclear Information System (INIS)

    Lee, Y.H.; Pogany, A.; Harrison, H.B.; Williams, J.S.

    1985-01-01

    Rapid thermal annealing (RTA) of phosphorus-implanted silicon has been investigated by four point probe, Van der Pauw methods and transmission electron microscopy. The results have been compared to furnace annealing. Experiments show that RTA, even at temperatures as low as 605 deg C, results in good electrical properties with little remnant damage and compares favourably with furnace annealing

  18. Computational Multiqubit Tunnelling in Programmable Quantum Annealers

    Science.gov (United States)

    2016-08-25

    ARTICLE Received 3 Jun 2015 | Accepted 26 Nov 2015 | Published 7 Jan 2016 Computational multiqubit tunnelling in programmable quantum annealers...state itself. Quantum tunnelling has been hypothesized as an advantageous physical resource for optimization in quantum annealing. However, computational ...qubit tunnelling plays a computational role in a currently available programmable quantum annealer. We devise a probe for tunnelling, a computational

  19. Very fast simulated re-annealing

    OpenAIRE

    L. Ingber

    1989-01-01

    Draft An algorithm is developed to statistically find the best global fit of a nonlinear non-convex cost-function over a D-dimensional space. It is argued that this algorithm permits an annealing schedule for ‘‘temperature’’ T decreasing exponentially in annealing-time k, T = T0 exp(−ck1/D). The introduction of re-annealing also permits adaptation to changing sensitivities in the multidimensional parameter-space. This annealing schedule is faster than fast Cauchy annealing, ...

  20. Computational algorithm for molybdenite concentrate annealing

    International Nuclear Information System (INIS)

    Alkatseva, V.M.

    1995-01-01

    Computational algorithm is presented for annealing of molybdenite concentrate with granulated return dust and that of granulated molybdenite concentrate. The algorithm differs from the known analogies for sulphide raw material annealing by including the calculation of return dust mass in stationary annealing; the latter quantity varies form the return dust mass value obtained in the first iteration step. Masses of solid products are determined by distribution of concentrate annealing products, including return dust and benthonite. The algorithm is applied to computations for annealing of other sulphide materials. 3 refs

  1. Plasma assisted heat treatment: annealing

    International Nuclear Information System (INIS)

    Brunatto, S F; Guimaraes, N V

    2009-01-01

    This work comprises a new dc plasma application in the metallurgical-mechanical field, called plasma assisted heat treatment, and it presents the first results for annealing. Annealing treatments were performed in 90% reduction cold-rolled niobium samples at 900 deg. C and 60 min, in two different heating ways: (a) in a hollow cathode discharge (HCD) configuration and (b) in a plasma oven configuration. The evolution of the samples' recrystallization was determined by means of the microstructure, microhardness and softening rate characterization. The results indicate that plasma species (ions and neutrals) bombardment in HCD plays an important role in the recrystallization process activation and could lead to technological and economical advantages considering the metallic materials' heat treatment application. (fast track communication)

  2. Simulated annealing model of acupuncture

    Science.gov (United States)

    Shang, Charles; Szu, Harold

    2015-05-01

    The growth control singularity model suggests that acupuncture points (acupoints) originate from organizers in embryogenesis. Organizers are singular points in growth control. Acupuncture can cause perturbation of a system with effects similar to simulated annealing. In clinical trial, the goal of a treatment is to relieve certain disorder which corresponds to reaching certain local optimum in simulated annealing. The self-organizing effect of the system is limited and related to the person's general health and age. Perturbation at acupoints can lead a stronger local excitation (analogous to higher annealing temperature) compared to perturbation at non-singular points (placebo control points). Such difference diminishes as the number of perturbed points increases due to the wider distribution of the limited self-organizing activity. This model explains the following facts from systematic reviews of acupuncture trials: 1. Properly chosen single acupoint treatment for certain disorder can lead to highly repeatable efficacy above placebo 2. When multiple acupoints are used, the result can be highly repeatable if the patients are relatively healthy and young but are usually mixed if the patients are old, frail and have multiple disorders at the same time as the number of local optima or comorbidities increases. 3. As number of acupoints used increases, the efficacy difference between sham and real acupuncture often diminishes. It predicted that the efficacy of acupuncture is negatively correlated to the disease chronicity, severity and patient's age. This is the first biological - physical model of acupuncture which can predict and guide clinical acupuncture research.

  3. Annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    Chivers, D.; Smith, B.J.; Stephen, J.; Fisher, M.

    1980-09-01

    The newer uses of ion implantation require a higher dose rate. This has led to the introduction of high beam current implanters; the wafers move in front of a stationary beam to give a scanning effect. This can lead to non-uniform heating of the wafer. Variations in the sheet resistance of the layers can be very non-uniform following thermal annealing. Non-uniformity in the effective doping both over a single wafer and from one wafer to another, can affect the usefulness of ion implantation in high dose rate applications. Experiments to determine the extent of non-uniformity in sheet resistance, and to see if it is correlated to the annealing scheme have been carried out. Details of the implantation parameters are given. It was found that best results were obtained when layers were annealed at the maximum possible temperature. For arsenic, phosphorus and antimony layers, improvements were observed up to 1200 0 C and boron up to 950 0 C. Usually, it is best to heat the layer directly to the maximum temperature to produce the most uniform layer; with phosphorus layers however it is better to pre-heat to 1050 0 C. (U.K.)

  4. Strong white photoluminescence from annealed zeolites

    International Nuclear Information System (INIS)

    Bai, Zhenhua; Fujii, Minoru; Imakita, Kenji; Hayashi, Shinji

    2014-01-01

    The optical properties of zeolites annealed at various temperatures are investigated for the first time. The annealed zeolites exhibit strong white photoluminescence (PL) under ultraviolet light excitation. With increasing annealing temperature, the emission intensity of annealed zeolites first increases and then decreases. At the same time, the PL peak red-shifts from 495 nm to 530 nm, and then returns to 500 nm. The strongest emission appears when the annealing temperature is 500 °C. The quantum yield of the sample is measured to be ∼10%. The PL lifetime monotonously increases from 223 μs to 251 μs with increasing annealing temperature. The origin of white PL is ascribed to oxygen vacancies formed during the annealing process. -- Highlights: • The optical properties of zeolites annealed at various temperatures are investigated. • The annealed zeolites exhibit strong white photoluminescence. • The maximum PL enhancement reaches as large as 62 times. • The lifetime shows little dependence on annealing temperature. • The origin of white emission is ascribed to the oxygen vacancies

  5. Quantum annealing for combinatorial clustering

    Science.gov (United States)

    Kumar, Vaibhaw; Bass, Gideon; Tomlin, Casey; Dulny, Joseph

    2018-02-01

    Clustering is a powerful machine learning technique that groups "similar" data points based on their characteristics. Many clustering algorithms work by approximating the minimization of an objective function, namely the sum of within-the-cluster distances between points. The straightforward approach involves examining all the possible assignments of points to each of the clusters. This approach guarantees the solution will be a global minimum; however, the number of possible assignments scales quickly with the number of data points and becomes computationally intractable even for very small datasets. In order to circumvent this issue, cost function minima are found using popular local search-based heuristic approaches such as k-means and hierarchical clustering. Due to their greedy nature, such techniques do not guarantee that a global minimum will be found and can lead to sub-optimal clustering assignments. Other classes of global search-based techniques, such as simulated annealing, tabu search, and genetic algorithms, may offer better quality results but can be too time-consuming to implement. In this work, we describe how quantum annealing can be used to carry out clustering. We map the clustering objective to a quadratic binary optimization problem and discuss two clustering algorithms which are then implemented on commercially available quantum annealing hardware, as well as on a purely classical solver "qbsolv." The first algorithm assigns N data points to K clusters, and the second one can be used to perform binary clustering in a hierarchical manner. We present our results in the form of benchmarks against well-known k-means clustering and discuss the advantages and disadvantages of the proposed techniques.

  6. Loviisa Unit One: Annealing - healing

    Energy Technology Data Exchange (ETDEWEB)

    Kohopaeae, J.; Virsu, R. [ed.; Henriksson, A. [ed.

    1997-11-01

    Unit 1 of the Loviisa nuclear powerplant was annealed in connection with the refuelling outage in the summer of 1996. This type of heat treatment restored the toughness properties of the pressure vessel weld, which had been embrittled be neutron radiation, so that it is almost equivalent to a new weld. The treatment itself was an ordinary metallurgical procedure that took only a few days. But the material studies that preceded it began over fifteen years ago and have put IVO at the forefront of world-wide expertise in the area of radiation embrittlement

  7. Simulated annealing with constant thermodynamic speed

    International Nuclear Information System (INIS)

    Salamon, P.; Ruppeiner, G.; Liao, L.; Pedersen, J.

    1987-01-01

    Arguments are presented to the effect that the optimal annealing schedule for simulated annealing proceeds with constant thermodynamic speed, i.e., with dT/dt = -(v T)/(ε-√C), where T is the temperature, ε- is the relaxation time, C ist the heat capacity, t is the time, and v is the thermodynamic speed. Experimental results consistent with this conjecture are presented from simulated annealing on graph partitioning problems. (orig.)

  8. Temperature Scaling Law for Quantum Annealing Optimizers.

    Science.gov (United States)

    Albash, Tameem; Martin-Mayor, Victor; Hen, Itay

    2017-09-15

    Physical implementations of quantum annealing unavoidably operate at finite temperatures. We point to a fundamental limitation of fixed finite temperature quantum annealers that prevents them from functioning as competitive scalable optimizers and show that to serve as optimizers annealer temperatures must be appropriately scaled down with problem size. We derive a temperature scaling law dictating that temperature must drop at the very least in a logarithmic manner but also possibly as a power law with problem size. We corroborate our results by experiment and simulations and discuss the implications of these to practical annealers.

  9. GPU accelerated population annealing algorithm

    Science.gov (United States)

    Barash, Lev Yu.; Weigel, Martin; Borovský, Michal; Janke, Wolfhard; Shchur, Lev N.

    2017-11-01

    Population annealing is a promising recent approach for Monte Carlo simulations in statistical physics, in particular for the simulation of systems with complex free-energy landscapes. It is a hybrid method, combining importance sampling through Markov chains with elements of sequential Monte Carlo in the form of population control. While it appears to provide algorithmic capabilities for the simulation of such systems that are roughly comparable to those of more established approaches such as parallel tempering, it is intrinsically much more suitable for massively parallel computing. Here, we tap into this structural advantage and present a highly optimized implementation of the population annealing algorithm on GPUs that promises speed-ups of several orders of magnitude as compared to a serial implementation on CPUs. While the sample code is for simulations of the 2D ferromagnetic Ising model, it should be easily adapted for simulations of other spin models, including disordered systems. Our code includes implementations of some advanced algorithmic features that have only recently been suggested, namely the automatic adaptation of temperature steps and a multi-histogram analysis of the data at different temperatures. Program Files doi:http://dx.doi.org/10.17632/sgzt4b7b3m.1 Licensing provisions: Creative Commons Attribution license (CC BY 4.0) Programming language: C, CUDA External routines/libraries: NVIDIA CUDA Toolkit 6.5 or newer Nature of problem: The program calculates the internal energy, specific heat, several magnetization moments, entropy and free energy of the 2D Ising model on square lattices of edge length L with periodic boundary conditions as a function of inverse temperature β. Solution method: The code uses population annealing, a hybrid method combining Markov chain updates with population control. The code is implemented for NVIDIA GPUs using the CUDA language and employs advanced techniques such as multi-spin coding, adaptive temperature

  10. Laser annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    White, C.W.; Narayan, J.; Young, R.T.

    1978-11-01

    The physical and electrical properties of ion implanted silicon annealed with high powered ruby laser radiation are summarized. Results show that pulsed laser annealing can lead to a complete removal of extended defects in the implanted region accompanied by incorporation of dopants into lattice sites even when their concentration far exceeds the solid solubility limit

  11. Modernizing quantum annealing using local searches

    International Nuclear Information System (INIS)

    Chancellor, Nicholas

    2017-01-01

    I describe how real quantum annealers may be used to perform local (in state space) searches around specified states, rather than the global searches traditionally implemented in the quantum annealing algorithm (QAA). Such protocols will have numerous advantages over simple quantum annealing. By using such searches the effect of problem mis-specification can be reduced, as only energy differences between the searched states will be relevant. The QAA is an analogue of simulated annealing, a classical numerical technique which has now been superseded. Hence, I explore two strategies to use an annealer in a way which takes advantage of modern classical optimization algorithms. Specifically, I show how sequential calls to quantum annealers can be used to construct analogues of population annealing and parallel tempering which use quantum searches as subroutines. The techniques given here can be applied not only to optimization, but also to sampling. I examine the feasibility of these protocols on real devices and note that implementing such protocols should require minimal if any change to the current design of the flux qubit-based annealers by D-Wave Systems Inc. I further provide proof-of-principle numerical experiments based on quantum Monte Carlo that demonstrate simple examples of the discussed techniques. (paper)

  12. Annealed star-branched polyelectrolytes in solution

    NARCIS (Netherlands)

    Klein Wolterink, J.; Male, van J.; Cohen Stuart, M.A.; Koopal, L.K.; Zhulina, E.B.; Borisov, O.V.

    2002-01-01

    Equilibrium conformations of annealed star-branched polyelectrolytes (polyacids) are calculated with a numerical self-consistent-field (SCF) model. From the calculations we obtain also the size and charge of annealed polyelectrolyte stars as a function of the number of arms, pH, and the ionic

  13. Understanding the microwave annealing of silicon

    Directory of Open Access Journals (Sweden)

    Chaochao Fu

    2017-03-01

    Full Text Available Though microwave annealing appears to be very appealing due to its unique features, lacking an in-depth understanding and accurate model hinder its application in semiconductor processing. In this paper, the physics-based model and accurate calculation for the microwave annealing of silicon are presented. Both thermal effects, including ohmic conduction loss and dielectric polarization loss, and non-thermal effects are thoroughly analyzed. We designed unique experiments to verify the mechanism and extract relevant parameters. We also explicitly illustrate the dynamic interaction processes of the microwave annealing of silicon. This work provides an in-depth understanding that can expedite the application of microwave annealing in semiconductor processing and open the door to implementing microwave annealing for future research and applications.

  14. Reduced annealing temperatures in silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.

    1981-01-01

    Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

  15. Electrical properties and annealing kinetics study of laser-annealed ion-implanted silicon

    International Nuclear Information System (INIS)

    Wang, K.L.; Liu, Y.S.; Kirkpatrick, C.G.; Possin, G.E.

    1979-01-01

    This paper describes measurements of electrical properties and the regrowth behavior of ion-implanted silicon annealed with an 80-ns (FWHM) laser pulse at 1.06 μm. The experimental results include: (1) a determination of threshold energy density required for melting using a transient optical reflectivity technique, (2) measurements of dopant distribution using Rutherford backscattering spectroscopy, (3) characterization of electrical properties by measuring reverse leakage current densities of laser-annealed and thermal-annealed mesa diodes, (4) determination of annealed junction depth using an electron-beam-induced-current technique, and (5) a deep-level-transient spectroscopic study of residual defects. In particular, by measuring these properties of a diode annealed at a condition near the threshold energy density for liquid phase epitaxial regrowth, we have found certain correlations among these various annealing behaviors and electrical properties of laser-annealed ion-implanted silicon diodes

  16. Cylinder packing by simulated annealing

    Directory of Open Access Journals (Sweden)

    M. Helena Correia

    2000-12-01

    Full Text Available This paper is motivated by the problem of loading identical items of circular base (tubes, rolls, ... into a rectangular base (the pallet. For practical reasons, all the loaded items are considered to have the same height. The resolution of this problem consists in determining the positioning pattern of the circular bases of the items on the rectangular pallet, while maximizing the number of items. This pattern will be repeated for each layer stacked on the pallet. Two algorithms based on the meta-heuristic Simulated Annealing have been developed and implemented. The tuning of these algorithms parameters implied running intensive tests in order to improve its efficiency. The algorithms developed were easily extended to the case of non-identical circles.Este artigo aborda o problema de posicionamento de objetos de base circular (tubos, rolos, ... sobre uma base retangular de maiores dimensões. Por razões práticas, considera-se que todos os objetos a carregar apresentam a mesma altura. A resolução do problema consiste na determinação do padrão de posicionamento das bases circulares dos referidos objetos sobre a base de forma retangular, tendo como objetivo a maximização do número de objetos estritamente posicionados no interior dessa base. Este padrão de posicionamento será repetido em cada uma das camadas a carregar sobre a base retangular. Apresentam-se dois algoritmos para a resolução do problema. Estes algoritmos baseiam-se numa meta-heurística, Simulated Annealling, cuja afinação de parâmetros requereu a execução de testes intensivos com o objetivo de atingir um elevado grau de eficiência no seu desempenho. As características dos algoritmos implementados permitiram que a sua extensão à consideração de círculos com raios diferentes fosse facilmente conseguida.

  17. Global warming: Temperature estimation in annealers

    Directory of Open Access Journals (Sweden)

    Jack Raymond

    2016-11-01

    Full Text Available Sampling from a Boltzmann distribution is NP-hard and so requires heuristic approaches. Quantum annealing is one promising candidate. The failure of annealing dynamics to equilibrate on practical time scales is a well understood limitation, but does not always prevent a heuristically useful distribution from being generated. In this paper we evaluate several methods for determining a useful operational temperature range for annealers. We show that, even where distributions deviate from the Boltzmann distribution due to ergodicity breaking, these estimates can be useful. We introduce the concepts of local and global temperatures that are captured by different estimation methods. We argue that for practical application it often makes sense to analyze annealers that are subject to post-processing in order to isolate the macroscopic distribution deviations that are a practical barrier to their application.

  18. Coherent Coupled Qubits for Quantum Annealing

    Science.gov (United States)

    Weber, Steven J.; Samach, Gabriel O.; Hover, David; Gustavsson, Simon; Kim, David K.; Melville, Alexander; Rosenberg, Danna; Sears, Adam P.; Yan, Fei; Yoder, Jonilyn L.; Oliver, William D.; Kerman, Andrew J.

    2017-07-01

    Quantum annealing is an optimization technique which potentially leverages quantum tunneling to enhance computational performance. Existing quantum annealers use superconducting flux qubits with short coherence times limited primarily by the use of large persistent currents Ip. Here, we examine an alternative approach using qubits with smaller Ip and longer coherence times. We demonstrate tunable coupling, a basic building block for quantum annealing, between two flux qubits with small (approximately 50-nA) persistent currents. Furthermore, we characterize qubit coherence as a function of coupler setting and investigate the effect of flux noise in the coupler loop on qubit coherence. Our results provide insight into the available design space for next-generation quantum annealers with improved coherence.

  19. Annealing behavior of high permeability amorphous alloys

    International Nuclear Information System (INIS)

    Rabenberg, L.

    1980-06-01

    Effects of low temperature annealing on the magnetic properties of the amorphous alloy Co 71 4 Fe 4 6 Si 9 6 B 14 4 were investigated. Annealing this alloy below 400 0 C results in magnetic hardening; annealing above 400 0 C but below the crystallization temperature results in magnetic softening. Above the crystallization temperature the alloy hardens drastically and irreversibly. Conventional and high resolution transmission electron microscopy were used to show that the magnetic property changes at low temperatures occur while the alloy is truly amorphous. By imaging the magnetic microstructures, Lorentz electron microscopy has been able to detect the presence of microscopic inhomogeneities in this alloy. The low temperature annealing behavior of this alloy has been explained in terms of atomic pair ordering in the presence of the internal molecular field. Lorentz electron microscopy has been used to confirm this explanation

  20. Irradiation embrittlement and optimisation of annealing

    International Nuclear Information System (INIS)

    1993-01-01

    This conference is composed of 30 papers grouped in 6 sessions related to the following themes: neutron irradiation effects in pressure vessel steels and weldments used in PWR, WWER and BWR nuclear plants; results from surveillance programmes (irradiation induced damage and annealing processes); studies on the influence of variations in irradiation conditions and mechanisms, and modelling; mitigation of irradiation effects, especially through thermal annealing; mechanical test procedures and specimen size effects

  1. Structural relaxation in annealed hyperquenched basaltic glasses

    DEFF Research Database (Denmark)

    Guo, Xiaoju; Mauro, John C.; Potuzak, M.

    2012-01-01

    The enthalpy relaxation behavior of hyperquenched (HQ) and annealed hyperquenched (AHQ) basaltic glass is investigated through calorimetric measurements. The results reveal a common onset temperature of the glass transition for all the HQ and AHQ glasses under study, indicating that the primary...... relaxation is activated at the same temperature regardless of the initial departure from equilibrium. The analysis of secondary relaxation at different annealing temperatures provides insights into the enthalpy recovery of HQ glasses....

  2. Irradiation embrittlement and optimisation of annealing

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-12-31

    This conference is composed of 30 papers grouped in 6 sessions related to the following themes: neutron irradiation effects in pressure vessel steels and weldments used in PWR, WWER and BWR nuclear plants; results from surveillance programmes (irradiation induced damage and annealing processes); studies on the influence of variations in irradiation conditions and mechanisms, and modelling; mitigation of irradiation effects, especially through thermal annealing; mechanical test procedures and specimen size effects.

  3. Boosting quantum annealer performance via sample persistence

    Science.gov (United States)

    Karimi, Hamed; Rosenberg, Gili

    2017-07-01

    We propose a novel method for reducing the number of variables in quadratic unconstrained binary optimization problems, using a quantum annealer (or any sampler) to fix the value of a large portion of the variables to values that have a high probability of being optimal. The resulting problems are usually much easier for the quantum annealer to solve, due to their being smaller and consisting of disconnected components. This approach significantly increases the success rate and number of observations of the best known energy value in samples obtained from the quantum annealer, when compared with calling the quantum annealer without using it, even when using fewer annealing cycles. Use of the method results in a considerable improvement in success metrics even for problems with high-precision couplers and biases, which are more challenging for the quantum annealer to solve. The results are further enhanced by applying the method iteratively and combining it with classical pre-processing. We present results for both Chimera graph-structured problems and embedded problems from a real-world application.

  4. Energy Saving in Industrial Annealing Furnaces

    Directory of Open Access Journals (Sweden)

    Fatma ÇANKA KILIÇ

    2018-03-01

    Full Text Available In this study, an energy efficiency studies have been carried out in a natural gas-fired rolling mill annealing furnace of an industrial establishment. In this context, exhaust gas from the furnace has been examined in terms of waste heat potential. In the examinations that have been made in detail; waste heat potential was found as 3.630,31 kW. Technical and feasibility studies have been carried out to realize electricity production through an Organic Rankine Cycle (ORC system for evaluating the waste heat potential of the annealing furnace. It has been calculated that 1.626.378,88 kWh/year of electricity can be generated by using the exhaust gas waste heat of the annealing furnace through an ORC system to produce electric energy with a net efficiency of 16%. The financial value of this energy was determined as 436.032,18 TL/year and the simple repayment period of the investment was 8,12 years. Since the annealing period of the annealing furnace is 2800 hours/year, the investment has not been found to be feasible in terms of the feasibility studies. However, the investment suitability can be assured when the annealing furnace is operating at full capacity for 8,000 hours or more annually.

  5. Origin of reverse annealing effect in hydrogen-implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Di, Zengfeng [Los Alamos National Laboratory; Nastasi, Michael A [Los Alamos National Laboratory; Wang, Yongqiang [Los Alamos National Laboratory

    2009-01-01

    In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. On the basis of quantitative high resolution transmission electron microscopy combined with channeling Rutherford backscattering analysis, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induce platelets. Platelets are responsible for an increase in the height and width the channeling damage peak following increased isochronal anneals.

  6. Quantum Annealing and Quantum Fluctuation Effect in Frustrated Ising Systems

    OpenAIRE

    Tanaka, Shu; Tamura, Ryo

    2012-01-01

    Quantum annealing method has been widely attracted attention in statistical physics and information science since it is expected to be a powerful method to obtain the best solution of optimization problem as well as simulated annealing. The quantum annealing method was incubated in quantum statistical physics. This is an alternative method of the simulated annealing which is well-adopted for many optimization problems. In the simulated annealing, we obtain a solution of optimization problem b...

  7. Melting phenomenon and laser annealing in semiconductors

    International Nuclear Information System (INIS)

    Narayan, J.

    1981-03-01

    The work on annealing of displacement damage, dissolution of boron precipitates, and the broadening of dopant profiles in semiconductors after treating with ruby and dye laser pulses is reviewed in order to provide convincing evidence for the melting phenomenon and illustrate the mechanism associated with laser annealing. The nature of the solid-liquid interface and the interface instability during rapid solidification is considered in detail. It is shown that solute concentrations after pulsed laser annealing can far exceed retrograde maxima values. However, there is a critical solute concentration above which a planar solid-liquid interface becomes unstable and breaks into a cellular structure. The solute concentrations and cell sizes associated with this instability are calculated using a perturbation theory, and compared with experimental results

  8. Hydrogen Annealing Of Single-Crystal Superalloys

    Science.gov (United States)

    Smialek, James L.; Schaeffer, John C.; Murphy, Wendy

    1995-01-01

    Annealing at temperature equal to or greater than 2,200 degrees F in atmosphere of hydrogen found to increase ability of single-crystal superalloys to resist oxidation when subsequently exposed to oxidizing atmospheres at temperatures almost as high. Supperalloys in question are principal constituents of hot-stage airfoils (blades) in aircraft and ground-based turbine engines; also used in other high-temperature applications like chemical-processing plants, coal-gasification plants, petrochemical refineries, and boilers. Hydrogen anneal provides resistance to oxidation without decreasing fatigue strength and without need for coating or reactive sulfur-gettering constituents. In comparison with coating, hydrogen annealing costs less. Benefits extend to stainless steels, nickel/chromium, and nickel-base alloys, subject to same scale-adhesion and oxidation-resistance considerations, except that scale is chromia instead of alumina.

  9. Traffic Flow Optimization Using a Quantum Annealer

    Directory of Open Access Journals (Sweden)

    Florian Neukart

    2017-12-01

    Full Text Available Quantum annealing algorithms belong to the class of metaheuristic tools, applicable for solving binary optimization problems. Hardware implementations of quantum annealing, such as the quantum processing units (QPUs produced by D-Wave Systems, have been subject to multiple analyses in research, with the aim of characterizing the technology’s usefulness for optimization and sampling tasks. In this paper, we present a real-world application that uses quantum technologies. Specifically, we show how to map certain parts of a real-world traffic flow optimization problem to be suitable for quantum annealing. We show that time-critical optimization tasks, such as continuous redistribution of position data for cars in dense road networks, are suitable candidates for quantum computing. Due to the limited size and connectivity of current-generation D-Wave QPUs, we use a hybrid quantum and classical approach to solve the traffic flow problem.

  10. Strain of laser annealed silicon surfaces

    Science.gov (United States)

    Nemanich, R. J.; Haneman, D.

    1982-05-01

    High resolution Raman scattering measurements have been carried out on pulse and continuous-wave laser annealed silicon samples with various surface preparations. These included polished and ion-bombarded wafers, and saw-cut crystals. The pulse annealing treatments were carried out in ultrahigh vacuum and in air. The residual strain was inferred from the frequency shift of the first-order Raman active mode of Si, and was detectable in the range 10-2-10-3 in all except the polished samples.

  11. Thermal annealing of tilted fiber Bragg gratings

    Science.gov (United States)

    González-Vila, Á.; Rodríguez-Cobo, L.; Mégret, P.; Caucheteur, C.; López-Higuera, J. M.

    2016-05-01

    We report a practical study of the thermal decay of cladding mode resonances in tilted fiber Bragg gratings, establishing an analogy with the "power law" evolution previously observed on uniform gratings. We examine how this process contributes to a great thermal stability, even improving it by means of a second cycle slightly increasing the annealing temperature. In addition, we show an improvement of the grating spectrum after annealing, with respect to the one just after inscription, which suggests the application of this method to be employed to improve saturation issues during the photo-inscription process.

  12. Implantation annealing by scanning electron beam

    International Nuclear Information System (INIS)

    Jaussaud, C.; Biasse, B.; Cartier, A.M.; Bontemps, A.

    1983-11-01

    Samples of ion implanted silicon (BF 2 , 30keV, 10 15 ions x cm -2 ) have been annealed with a multiple scan electron beam, at temperatures ranging from 1000 to 1200 0 C. The curves of sheet resistance versus time show a minimum. Nuclear reaction measurements of the amount of boron remaining after annealing show that the increase in sheet resistance is due to a loss of boron. The increase in junction depths, measured by spreading resistance on bevels is between a few hundred A and 1000 A [fr

  13. Scalable effective-temperature reduction for quantum annealers via nested quantum annealing correction

    Science.gov (United States)

    Vinci, Walter; Lidar, Daniel A.

    2018-02-01

    Nested quantum annealing correction (NQAC) is an error-correcting scheme for quantum annealing that allows for the encoding of a logical qubit into an arbitrarily large number of physical qubits. The encoding replaces each logical qubit by a complete graph of degree C . The nesting level C represents the distance of the error-correcting code and controls the amount of protection against thermal and control errors. Theoretical mean-field analyses and empirical data obtained with a D-Wave Two quantum annealer (supporting up to 512 qubits) showed that NQAC has the potential to achieve a scalable effective-temperature reduction, Teff˜C-η , with 0 temperature of a quantum annealer. Such effective-temperature reduction is relevant for machine-learning applications. Since we demonstrate that NQAC achieves error correction via a reduction of the effective-temperature of the quantum annealing device, our results address the problem of the "temperature scaling law for quantum annealers," which requires the temperature of quantum annealers to be reduced as problems of larger sizes are attempted to be solved.

  14. Finite-time thermodynamics and simulated annealing

    International Nuclear Information System (INIS)

    Andresen, B.

    1989-01-01

    When the general, global optimization technique simulated annealing was introduced by Kirkpatrick et al. (1983), this mathematical algorithm was based on an analogy to the statistical mechanical behavior of real physical systems like spin glasses, hence the name. In the intervening span of years the method has proven exceptionally useful for a great variety of extremely complicated problems, notably NP-problems like the travelling salesman, DNA sequencing, and graph partitioning. Only a few highly optimized heuristic algorithms (e.g. Lin, Kernighan 1973) have outperformed simulated annealing on their respective problems (Johnson et al. 1989). Simulated annealing in its current form relies only on the static quantity 'energy' to describe the system, whereas questions of rate, as in the temperature path (annealing schedule, see below), are left to intuition. We extent the connection to physical systems and take over further components from thermodynamics like ensemble, heat capacity, and relaxation time. Finally we refer to finite-time thermodynamics (Andresen, Salomon, Berry 1984) for a dynamical estimate of the optimal temperature path. (orig.)

  15. Intelligent medical image processing by simulated annealing

    International Nuclear Information System (INIS)

    Ohyama, Nagaaki

    1992-01-01

    Image processing is being widely used in the medical field and already has become very important, especially when used for image reconstruction purposes. In this paper, it is shown that image processing can be classified into 4 categories; passive, active, intelligent and visual image processing. These 4 classes are explained at first through the use of several examples. The results show that the passive image processing does not give better results than the others. Intelligent image processing, then, is addressed, and the simulated annealing method is introduced. Due to the flexibility of the simulated annealing, formulated intelligence is shown to be easily introduced in an image reconstruction problem. As a practical example, 3D blood vessel reconstruction from a small number of projections, which is insufficient for conventional method to give good reconstruction, is proposed, and computer simulation clearly shows the effectiveness of simulated annealing method. Prior to the conclusion, medical file systems such as IS and C (Image Save and Carry) is pointed out to have potential for formulating knowledge, which is indispensable for intelligent image processing. This paper concludes by summarizing the advantages of simulated annealing. (author)

  16. In situ annealing of hydroxyapatite thin films

    International Nuclear Information System (INIS)

    Johnson, Shevon; Haluska, Michael; Narayan, Roger J.; Snyder, Robert L.

    2006-01-01

    Hydroxyapatite is a bioactive ceramic that mimics the mineral composition of natural bone. Unfortunately, problems with adhesion, poor mechanical integrity, and incomplete bone ingrowth limit the use of many conventional hydroxyapatite surfaces. In this work, we have developed a novel technique to produce crystalline hydroxyapatite thin films involving pulsed laser deposition and postdeposition annealing. Hydroxyapatite films were deposited on Ti-6Al-4V alloy and Si (100) using pulsed laser deposition, and annealed within a high temperature X-ray diffraction system. The transformation from amorphous to crystalline hydroxyapatite was observed at 340 deg. C. Mechanical and adhesive properties were examined using nanoindentation and scratch adhesion testing, respectively. Nanohardness and Young's modulus values of 3.48 and 91.24 GPa were realized in unannealed hydroxyapatite films. Unannealed and 350 deg. C annealed hydroxyapatite films exhibited excellent adhesion to Ti-6Al-4V alloy substrates. We anticipate that the adhesion and biological properties of crystalline hydroxyapatite thin films may be enhanced by further consideration of deposition and annealing parameters

  17. Unraveling Quantum Annealers using Classical Hardness

    Science.gov (United States)

    Martin-Mayor, Victor; Hen, Itay

    2015-01-01

    Recent advances in quantum technology have led to the development and manufacturing of experimental programmable quantum annealing optimizers that contain hundreds of quantum bits. These optimizers, commonly referred to as ‘D-Wave’ chips, promise to solve practical optimization problems potentially faster than conventional ‘classical’ computers. Attempts to quantify the quantum nature of these chips have been met with both excitement and skepticism but have also brought up numerous fundamental questions pertaining to the distinguishability of experimental quantum annealers from their classical thermal counterparts. Inspired by recent results in spin-glass theory that recognize ‘temperature chaos’ as the underlying mechanism responsible for the computational intractability of hard optimization problems, we devise a general method to quantify the performance of quantum annealers on optimization problems suffering from varying degrees of temperature chaos: A superior performance of quantum annealers over classical algorithms on these may allude to the role that quantum effects play in providing speedup. We utilize our method to experimentally study the D-Wave Two chip on different temperature-chaotic problems and find, surprisingly, that its performance scales unfavorably as compared to several analogous classical algorithms. We detect, quantify and discuss several purely classical effects that possibly mask the quantum behavior of the chip. PMID:26483257

  18. Hardening of niobium alloys at precrystallization annealing

    International Nuclear Information System (INIS)

    Vasil'eva, E.V.; Pustovalov, V.A.

    1989-01-01

    Niobium base alloys were investigated. It is shown that precrystallization annealing of niobium-molybdenum, niobium-vanadium and niobium-zirconium alloys elevates much more sufficiently their resistance to microplastic strains, than to macroplastic strains. Hardening effect differs sufficiently for different alloys. The maximal hardening is observed for niobium-vanadium alloys, the minimal one - for niobium-zirconium alloys

  19. Positron prevacancy effects in pure annealed metals

    International Nuclear Information System (INIS)

    Smedskjaer, L.C.

    1981-06-01

    The low-temperature prevacancy effects sometimes observed with positrons in well-annealed high-purity metals are discussed. It is shown that these effects are not experimental artifacts, but are due to trapping of the positrons. It is suggested that dislocations are responsible for these trapping effects. 46 references, 5 figures

  20. Thin-film designs by simulated annealing

    Science.gov (United States)

    Boudet, T.; Chaton, P.; Herault, L.; Gonon, G.; Jouanet, L.; Keller, P.

    1996-11-01

    With the increasing power of computers, new methods in synthesis of optical multilayer systems have appeared. Among these, the simulated-annealing algorithm has proved its efficiency in several fields of physics. We propose to show its performances in the field of optical multilayer systems through different filter designs.

  1. Thermal annealing in neutron-irradiated tribromobenzenes

    DEFF Research Database (Denmark)

    Siekierska, K.E.; Halpern, A.; Maddock, A. G.

    1968-01-01

    in the crystals was estimated by means of the 1,2-dibromoethylene exchange technique. The results suggest that, as a consequence of nuclear events, quite a number of different reactions occur whereas the principal annealing reaction is a recombination of atomic bromine with a dibromophenyl radical....

  2. Job shop scheduling by simulated annealing

    NARCIS (Netherlands)

    Laarhoven, van P.J.M.; Aarts, E.H.L.; Lenstra, J.K.

    1992-01-01

    We describe an approximation algorithm for the problem of finding the minimum makespan in a job shop. The algorithm is based on simulated annealing, a generalization of the well known iterative improvement approach to combinatorial optimization problems. The generalization involves the acceptance of

  3. Entanglement in a Quantum Annealing Processor

    Science.gov (United States)

    2016-09-07

    x ccjj. The annealing param- eter s is controlled with the global bias ΦxccjjðtÞ (see Appendix A for the mapping between s and Φxccjj and a...macroscopic rf SQUID param- eters : junction critical current Ic, qubit inductance Lq, and qubit capacitance Cq. We calibrate all of these parameters on this

  4. Influence of Intercritical Annealing Temperature on Mechanical ...

    African Journals Online (AJOL)

    The fracture surfaces of the impact test samples were examined using the scanning electron microscope (SEM). Micros structural evolution of the samples was also examined with an optical microscope. The results showed that all the evaluated mechanical properties were improved by intercritical annealing, with the ...

  5. Decorative properties of annealed Ti N coatings

    International Nuclear Information System (INIS)

    Klubovich, V.V.; Rubanik, V.V.; Bagrets, D.A.

    2012-01-01

    The decorative properties of annealed TiN coatings on austenitic stainless steel which were formed by vacuum-arc deposition wen investigated. It was shown the principal possibility to control colour characteristics of TiN films due to heat treatment at different temperature and time that expand their usage as decorative coatings. (authors).

  6. Investigations of morphological changes during annealing of polyethylene single crystals

    NARCIS (Netherlands)

    Tian, M.; Loos, J.

    2001-01-01

    The morphological evolution of isolated individual single crystals deposited on solid substrates was investigated during annealing experiments using in situ and ex situ atomic force microscopy techniques. The crystal morphology changed during annealing at temperatures slightly above the original

  7. High-temperature annealing of graphite: A molecular dynamics study

    Science.gov (United States)

    Petersen, Andrew; Gillette, Victor

    2018-05-01

    A modified AIREBO potential was developed to simulate the effects of thermal annealing on the structure and physical properties of damaged graphite. AIREBO parameter modifications were made to reproduce Density Functional Theory interstitial results. These changes to the potential resulted in high-temperature annealing of the model, as measured by stored-energy reduction. These results show some resemblance to experimental high-temperature annealing results, and show promise that annealing effects in graphite are accessible with molecular dynamics and reactive potentials.

  8. On lumped models for thermodynamic properties of simulated annealing problems

    International Nuclear Information System (INIS)

    Andresen, B.; Pedersen, J.M.; Salamon, P.; Hoffmann, K.H.; Mosegaard, K.; Nulton, J.

    1987-01-01

    The paper describes a new method for the estimation of thermodynamic properties for simulated annealing problems using data obtained during a simulated annealing run. The method works by estimating energy-to-energy transition probabilities and is well adapted to simulations such as simulated annealing, in which the system is never in equilibrium. (orig.)

  9. A note on simulated annealing to computer laboratory scheduling ...

    African Journals Online (AJOL)

    The concepts, principles and implementation of simulated Annealing as a modem heuristic technique is presented. Simulated Annealing algorithm is used in solving real life problem of Computer Laboratory scheduling in order to maximize the use of scarce and insufficient resources. KEY WORDS: Simulated Annealing ...

  10. Learning FCM by chaotic simulated annealing

    International Nuclear Information System (INIS)

    Alizadeh, Somayeh; Ghazanfari, Mehdi

    2009-01-01

    Fuzzy cognitive map (FCM) is a directed graph, which shows the relations between essential components in complex systems. It is a very convenient, simple, and powerful tool, which is used in numerous areas of application. Experts who are familiar with the system components and their relations can generate a related FCM. There is a big gap when human experts cannot produce FCM or even there is no expert to produce the related FCM. Therefore, a new mechanism must be used to bridge this gap. In this paper, a novel learning method is proposed to construct FCM by using Chaotic simulated annealing (CSA). The proposed method not only is able to construct FCM graph topology but also is able to extract the weight of the edges from input historical data. The efficiency of the proposed method is shown via comparison of its results of some numerical examples with those of Simulated annealing (SA) method.

  11. Annealing texture of rolled nickel alloys

    International Nuclear Information System (INIS)

    Meshchaninov, I.V.; Khayutin, S.G.

    1976-01-01

    A texture of pure nickel and binary alloys after the 95% rolling and annealing has been studied. Insoluble additives (Mg, Zr) slacken the cubic texture in nickel and neral slackening of the texture (Zr). In the case of alloying with silicium (up to 2%) the texture practically coinsides with that of a technical-grade nickel. The remaining soluble additives either do not change the texture of pure nickel (C, Nb) or enhance the sharpness and intensity of the cubic compontnt (Al, Cu, Mn, Cr, Mo, W, Co -at their content 0.5 to 2.0%). A model is proposed by which variation of the annealing texture upon alloying is caused by dissimilar effect of the alloying elements on the mobility of high- and low-angle grain boundaries

  12. Pyrolytic citrate synthesis and ozone annealing

    International Nuclear Information System (INIS)

    Celani, F.; Saggese, A.; Giovannella, C.; Messi, R.; Merlo, V.

    1988-01-01

    A pyrolytic procedure is described that via a citrate synthesis allowed us to obtain very fine grained YBCO powders that, after a first furnace thermal treatment in ozone, results already to contain a large amount of superconducting microcrystals. A second identical thermal treatment gives a final product strongly textured, as shown by magnetic torque measurements. Complementary structural and diamagnetic measurement show the high quality of these sintered pellets. The role covered by both the pyrolytic preparation and the ozone annealing are discussed

  13. Laser annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    White, C.W.; Appleton, B.R.; Wilson, S.R.

    1980-01-01

    Pulsed laser annealing of ion implanted silicon leads to the formation of supersaturated alloys by nonequilibrium crystal growth processes at the interface occurring during liquid phase epitaxial regrowth. The interfacial distribution coefficients from the melt (k') and the maximum substitutional solubilities (C/sub s//sup max/) are far greater than equilibrium values. Both K' and C/sub s//sup max/ are functions of growth velocity. Mechanisms limiting substitutional solubilities are discussed. 5 figures, 2 tables

  14. Simulated annealing algorithm for optimal capital growth

    Science.gov (United States)

    Luo, Yong; Zhu, Bo; Tang, Yong

    2014-08-01

    We investigate the problem of dynamic optimal capital growth of a portfolio. A general framework that one strives to maximize the expected logarithm utility of long term growth rate was developed. Exact optimization algorithms run into difficulties in this framework and this motivates the investigation of applying simulated annealing optimized algorithm to optimize the capital growth of a given portfolio. Empirical results with real financial data indicate that the approach is inspiring for capital growth portfolio.

  15. Annealing effects in solid-state track recorders

    International Nuclear Information System (INIS)

    Gold, R.; Roberts, J.H.; Ruddy, F.H.

    1981-01-01

    Current analyses of the annealing process in Solid State Track Recorders (SSTR) reveal fundamental misconceptions. The use of the Arrhenius equation to describe the decrease in track density resulting from annealing is shown to be incorrect. To overcome these deficiencies, generalized reaction rate theory is used to describe the annealing process in SSTR. Results of annealing experiments are used to guide this theoretical formulation. Within this framework, the concept of energy per etchable defect for SSTR is introduced. A general correlation between sensitivity and annealing susceptibility in SSTR is deduced. In terms of this general theory, the apparent correlation between fission track size and fission track density observed under annealing is readily explained. Based on this theoretical treatment of annealing phenomena, qualitative explanations are advanced for current enigmas in SSTR cosmic ray work

  16. Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.

    1980-01-01

    Deep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.

  17. Hierarchical Network Design Using Simulated Annealing

    DEFF Research Database (Denmark)

    Thomadsen, Tommy; Clausen, Jens

    2002-01-01

    networks are described and a mathematical model is proposed for a two level version of the hierarchical network problem. The problem is to determine which edges should connect nodes, and how demand is routed in the network. The problem is solved heuristically using simulated annealing which as a sub......-algorithm uses a construction algorithm to determine edges and route the demand. Performance for different versions of the algorithm are reported in terms of runtime and quality of the solutions. The algorithm is able to find solutions of reasonable quality in approximately 1 hour for networks with 100 nodes....

  18. Annealing relaxation of ultrasmall gold nanostructures

    Science.gov (United States)

    Chaban, Vitaly

    2015-01-01

    Except serving as an excellent gift on proper occasions, gold finds applications in life sciences, particularly in diagnostics and therapeutics. These applications were made possible by gold nanoparticles, which differ drastically from macroscopic gold. Versatile surface chemistry of gold nanoparticles allows coating with small molecules, polymers, biological recognition molecules. Theoretical investigation of nanoscale gold is not trivial, because of numerous metastable states in these systems. Unlike elsewhere, this work obtains equilibrium structures using annealing simulations within the recently introduced PM7-MD method. Geometries of the ultrasmall gold nanostructures with chalcogen coverage are described at finite temperature, for the first time.

  19. Binary Sparse Phase Retrieval via Simulated Annealing

    Directory of Open Access Journals (Sweden)

    Wei Peng

    2016-01-01

    Full Text Available This paper presents the Simulated Annealing Sparse PhAse Recovery (SASPAR algorithm for reconstructing sparse binary signals from their phaseless magnitudes of the Fourier transform. The greedy strategy version is also proposed for a comparison, which is a parameter-free algorithm. Sufficient numeric simulations indicate that our method is quite effective and suggest the binary model is robust. The SASPAR algorithm seems competitive to the existing methods for its efficiency and high recovery rate even with fewer Fourier measurements.

  20. Study of rolled uranium annealing process

    International Nuclear Information System (INIS)

    Cabane, G.

    1954-06-01

    The dilatometric study of rolled uranium clearly shows not only the expansions or contractions induced by stress relief or diffusion of vacancies, but also the slope variations of the cooling curves, which are the best evidence of a texture change. Under the microscope, hard-rolled sheets appear as a mixture of two distinct structures; it is also possible by intermediate annealing to prepare homogeneous sheets of either structure, i.e. twinned or untwinned. All these sheets which have similar textures, undergo at first a primary recrystallization beginning at 320 deg C, then a texture change without any apparent crystal growth, at about 430 deg C. (author) [fr

  1. Simulated annealing for tensor network states

    International Nuclear Information System (INIS)

    Iblisdir, S

    2014-01-01

    Markov chains for probability distributions related to matrix product states and one-dimensional Hamiltonians are introduced. With appropriate ‘inverse temperature’ schedules, these chains can be combined into a simulated annealing scheme for ground states of such Hamiltonians. Numerical experiments suggest that a linear, i.e., fast, schedule is possible in non-trivial cases. A natural extension of these chains to two-dimensional settings is next presented and tested. The obtained results compare well with Euclidean evolution. The proposed Markov chains are easy to implement and are inherently sign problem free (even for fermionic degrees of freedom). (paper)

  2. Fourier-transforming with quantum annealers

    Directory of Open Access Journals (Sweden)

    Itay eHen

    2014-07-01

    Full Text Available We introduce a set of quantum adiabatic evolutions that we argue may be used as `building blocks', or subroutines, in the onstruction of an adiabatic algorithm that executes Quantum Fourier Transform (QFT with the same complexity and resources as its gate-model counterpart. One implication of the above construction is the theoretical feasibility of implementing Shor's algorithm for integer factorization in an optimal manner, and any other algorithm that makes use of QFT, on quantum annealing devices. We discuss the possible advantages, as well as the limitations, of the proposed approach as well as its relation to traditional adiabatic quantum computation.

  3. Annealing-induced Ge/Si(100) island evolution

    International Nuclear Information System (INIS)

    Zhang Yangting; Drucker, Jeff

    2003-01-01

    Ge/Si(100) islands were found to coarsen during in situ annealing at growth temperature. Islands were grown by molecular-beam epitaxy of pure Ge and annealed at substrate temperatures of T=450, 550, 600, and 650 deg. C, with Ge coverages of 6.5, 8.0, and 9.5 monolayers. Three coarsening mechanisms operate in this temperature range: wetting-layer consumption, conventional Ostwald ripening, and Si interdiffusion. For samples grown and annealed at T=450 deg. C, consumption of a metastably thick wetting layer causes rapid initial coarsening. Slower coarsening at longer annealing times occurs by conventional Ostwald ripening. Coarsening of samples grown and annealed at T=550 deg. C occurs via a combination of Si interdiffusion and conventional Ostwald ripening. For samples grown and annealed at T≥600 deg. C, Ostwald ripening of SiGe alloy clusters appears to be the dominant coarsening mechanism

  4. Study on thermal annealing of cadmium zinc telluride (CZT) crystals

    International Nuclear Information System (INIS)

    Yang, G.; Bolotnikov, A.E.; Fochuk, P.M.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; Horace, J.; McCall, B.; Gul, R.; Xu, L.; Kopach, O.V.; James, R.B.

    2010-01-01

    Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

  5. Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon

    Directory of Open Access Journals (Sweden)

    Afarin Bahrami

    2012-01-01

    Full Text Available Porous silicon (PSi layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm2 fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM. Photoacoustic spectroscopy (PAS measurements were carried out to measure the thermal diffusivity (TD of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing.

  6. The changes of ADI structure during high temperature annealing

    OpenAIRE

    A. Krzyńska; M. Kaczorowski

    2010-01-01

    The results of structure investigations of ADI during it was annealing at elevated temperature are presented. Ductile iron austempered at temperature 325oC was then isothermally annealed 360 minutes at temperature 400, 450, 500 and 550oC. The structure investigations showed that annealing at these temperatures caused substantial structure changes and thus essential hardness decrease, which is most useful property of ADI from point of view its practical application. Degradation advance of the ...

  7. Hydration-annealing of chemical radiation damage in calcium nitrate

    International Nuclear Information System (INIS)

    Nair, S.M.K.; James, C.

    1984-01-01

    The effect of hydration on the annealing of chemical radiation damage in anhydrous calcium nitrate has been investigated. Rehydration of the anhydrous irradiated nitrate induces direct recovery of the damage. The rehydrated salt is susceptible to thermal annealing but the extent of annealing is small compared to that in the anhydrous salt. The direct recovery of damage on rehydration is due to enhanced lattice mobility. The recovery process is unimolecular. (author)

  8. Implantation annealing in GaAs by incoherent light

    International Nuclear Information System (INIS)

    Davies, D.E.; Ryan, T.G.; Soda, K.J.; Comer, J.J.

    1983-01-01

    Implanted GaAs has been successfully activated through concentrating the output of quartz halogen lamps to anneal in times of the order of 1 sec. The resulting layers are not restricted by the reduced mobilities and thermal instabilities of laser annealed GaAs. Better activation can be obtained than with furnace annealing but this generally requires maximum temperatures >= 1050degC. (author)

  9. Temperature distribution study in flash-annealed amorphous ribbons

    International Nuclear Information System (INIS)

    Moron, C.; Garcia, A.; Carracedo, M.T.

    2003-01-01

    Negative magnetrostrictive amorphous ribbons have been locally current annealed with currents from 1 to 8 A and annealing times from 14 ms to 200 s. In order to obtain information about the sample temperature during flash or current annealing, a study of the temperature dispersion during annealing in amorphous ribbons was made. The local temperature variation was obtained by measuring the local intensity of the infrared emission of the sample with a CCD liquid nitrogen cooled camera. A distribution of local temperature has been found in spite of the small dimension of the sample

  10. Burst annealing of high temperature GaAs solar cells

    Science.gov (United States)

    Brothers, P. R.; Horne, W. E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

  11. Burst annealing of high temperature GaAs solar cells

    International Nuclear Information System (INIS)

    Brothers, P.R.; Horne, W.E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 degree C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles

  12. Dosimetric characteristics of muscovite mineral studied under different annealing conditions

    International Nuclear Information System (INIS)

    Kalita, J M; Wary, G

    2015-01-01

    The annealing effect on the thermoluminescence (TL) characteristics of x-ray irradiated muscovite mineral relevant to dosimetry has been studied. For un-annealed and 473 K annealed samples an isolated TL peak has been observed at around 347 K; however, annealing at 573, 673 and 773 K two composite peaks have been recorded at around 347 and 408 K. Kinetic analysis reveals that there is a trap level at a depth of 0.71 eV, and due to annealing at 573 K (or above), a new trap level generates at 1.23 eV. The dosimetric characteristics, such as dose response, fading and reproducibility, have been studied in detail for all types of samples. The highest linear dose response has been observed from 10 to 2000 mGy in the 773 K annealed sample. Due to generation of the deep trap level, fading is found to reduce significantly just after annealing above 573 K. Reproducibility analysis shows that after 10 cycles of reuse the coefficient of variations in the results for 60, 180 and 1000 mGy dose irradiated 773 K annealed samples are found to be 1.78%, 1.37% and 1.58%, respectively. These analyses demand that after proper annealing muscovite shows important dosimetric features that are essentially required for a thermoluminescence dosimeter (TLD). (paper)

  13. Annealing behavior of alpha recoil tracks in phlogopite

    International Nuclear Information System (INIS)

    Gao Shaokai; Yuan Wanming; Dong Jinquan; Bao Zengkuan

    2005-01-01

    Alpha recoil tracks (ARTs) formed during the a-decay of U, Th as well as their daughter nuclei are used as a new dating method which is to some extent a complementarity of fission track dating due to its ability to determine the age of young mineral. ARTs can be observable under phase-contrast interference microscope through chemical etching. In order to study the annealing behavior of ARTs in phlogopite, two methods of annealing experiments were executed. Samples were annealed in the electronic tube furnace at different temperatures ranging from 250 degree C to 450 degree C in steps of 50 degree C. For any given annealing temperature, different annealing times were used until total track fading were achieved. It is found that ARTs anneal much more easily than fission tracks, the annealing ratio increase non-linearly with annealing time and temperature. Using the Arrhenius plot, an activation energy of 0.68ev is finally found for 100% removal of ARTs, which is less than the corresponding value for fission tracks (FTs). Through extending the annealing time to geological time, a much lower temperature range of the sample's cooling history can be got.

  14. Effects of Thermal Annealing Conditions on Cupric Oxide Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyo Seon; Oh, Hee-bong; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2015-07-15

    In this study, cupric oxide (CuO) thin films were grown on fluorine doped tin oxide(FTO) substrate by using spin coating method. We investigated the effects of thermal annealing temperature and thermal annealing duration on the morphological, structural, optical and photoelectrochemical properties of the CuO film. From the results, we could find that the morphologies, grain sizes, crystallinity and photoelectrochemical properties were dependent on the annealing conditions. As a result, the maximum photocurrent density of -1.47 mA/cm{sup 2} (vs. SCE) was obtained from the sample with the thermal annealing conditions of 500 ℃ and 40 min.

  15. Plasticity margin recovery during annealing after cold deformation

    International Nuclear Information System (INIS)

    Bogatov, A.A.; Smirnov, S.V.; Kolmogorov, V.L.

    1978-01-01

    Restoration of the plasticity margin in steel 20 after cold deformation and annealing at 550 - 750 C and soaking for 5 - 300 min was investigated. The conditions of cold deformation under which the metal acquires microdefects unhealed by subsequent annealing were determined. It was established that if the degree of utilization of the plasticity margin is psi < 0.5, the plasticity margin in steel 20 can be completely restored by annealing. A mathematical model of restoration of the plasticity margin by annealing after cold deformation was constructed. A statistical analysis showed good agreement between model and experiment

  16. Mean Field Analysis of Quantum Annealing Correction.

    Science.gov (United States)

    Matsuura, Shunji; Nishimori, Hidetoshi; Albash, Tameem; Lidar, Daniel A

    2016-06-03

    Quantum annealing correction (QAC) is a method that combines encoding with energy penalties and decoding to suppress and correct errors that degrade the performance of quantum annealers in solving optimization problems. While QAC has been experimentally demonstrated to successfully error correct a range of optimization problems, a clear understanding of its operating mechanism has been lacking. Here we bridge this gap using tools from quantum statistical mechanics. We study analytically tractable models using a mean-field analysis, specifically the p-body ferromagnetic infinite-range transverse-field Ising model as well as the quantum Hopfield model. We demonstrate that for p=2, where the phase transition is of second order, QAC pushes the transition to increasingly larger transverse field strengths. For p≥3, where the phase transition is of first order, QAC softens the closing of the gap for small energy penalty values and prevents its closure for sufficiently large energy penalty values. Thus QAC provides protection from excitations that occur near the quantum critical point. We find similar results for the Hopfield model, thus demonstrating that our conclusions hold in the presence of disorder.

  17. Ballistic self-annealing during ion implantation

    International Nuclear Information System (INIS)

    Prins, Johan F.

    2001-01-01

    Ion implantation conditions are considered during which the energy, dissipated in the collision cascades, is low enough to ensure that the defects, which are generated during these collisions, consist primarily of vacancies and interstitial atoms. It is proposed that ballistic self-annealing is possible when the point defect density becomes high enough, provided that none, or very few, of the interstitial atoms escape from the layer being implanted. Under these conditions, the fraction of ballistic atoms, generated within the collision cascades from substitutional sites, decreases with increasing ion dose. Furthermore, the fraction of ballistic atoms, which finally end up within vacancies, increases with increasing vacancy density. Provided the crystal structure does not collapse, a damage threshold should be approached where just as many atoms are knocked out of substitutional sites as the number of ballistic atoms that fall back into vacancies. Under these conditions, the average point defect density should approach saturation. This model is applied to recently published Raman data that have been measured on a 3 MeV He + -ion implanted diamond (Orwa et al 2000 Phys. Rev. B 62 5461). The conclusion is reached that this ballistic self-annealing model describes the latter data better than a model in which it is assumed that the saturation in radiation damage is caused by amorphization of the implanted layer. (author)

  18. MEDICAL STAFF SCHEDULING USING SIMULATED ANNEALING

    Directory of Open Access Journals (Sweden)

    Ladislav Rosocha

    2015-07-01

    Full Text Available Purpose: The efficiency of medical staff is a fundamental feature of healthcare facilities quality. Therefore the better implementation of their preferences into the scheduling problem might not only rise the work-life balance of doctors and nurses, but also may result into better patient care. This paper focuses on optimization of medical staff preferences considering the scheduling problem.Methodology/Approach: We propose a medical staff scheduling algorithm based on simulated annealing, a well-known method from statistical thermodynamics. We define hard constraints, which are linked to legal and working regulations, and minimize the violations of soft constraints, which are related to the quality of work, psychic, and work-life balance of staff.Findings: On a sample of 60 physicians and nurses from gynecology department we generated monthly schedules and optimized their preferences in terms of soft constraints. Our results indicate that the final value of objective function optimized by proposed algorithm is more than 18-times better in violations of soft constraints than initially generated random schedule that satisfied hard constraints.Research Limitation/implication: Even though the global optimality of final outcome is not guaranteed, desirable solutionwas obtained in reasonable time. Originality/Value of paper: We show that designed algorithm is able to successfully generate schedules regarding hard and soft constraints. Moreover, presented method is significantly faster than standard schedule generation and is able to effectively reschedule due to the local neighborhood search characteristics of simulated annealing.

  19. Magnetic field annealing for improved creep resistance

    Science.gov (United States)

    Brady, Michael P.; Ludtka, Gail M.; Ludtka, Gerard M.; Muralidharan, Govindarajan; Nicholson, Don M.; Rios, Orlando; Yamamoto, Yukinori

    2015-12-22

    The method provides heat-resistant chromia- or alumina-forming Fe-, Fe(Ni), Ni(Fe), or Ni-based alloys having improved creep resistance. A precursor is provided containing preselected constituents of a chromia- or alumina-forming Fe-, Fe(Ni), Ni(Fe), or Ni-based alloy, at least one of the constituents for forming a nanoscale precipitate MaXb where M is Cr, Nb, Ti, V, Zr, or Hf, individually and in combination, and X is C, N, O, B, individually and in combination, a=1 to 23 and b=1 to 6. The precursor is annealed at a temperature of 1000-1500.degree. C. for 1-48 h in the presence of a magnetic field of at least 5 Tesla to enhance supersaturation of the M.sub.aX.sub.b constituents in the annealed precursor. This forms nanoscale M.sub.aX.sub.b precipitates for improved creep resistance when the alloy is used at service temperatures of 500-1000.degree. C. Alloys having improved creep resistance are also disclosed.

  20. Mechanical behavior of multipass welded joint during stress relief annealing

    International Nuclear Information System (INIS)

    Ueda, Yukio; Fukuda, Keiji; Nakacho, Keiji; Takahashi, Eiji; Sakamoto, Koichi.

    1978-01-01

    An investigation into mechanical behavior of a multipass welded joint of a pressure vessel during stress relief annealing was conducted. The study was performed theoretically and experimentally on idealized research models. In the theoretical analysis, the thermal elastic-plastic creep theory developed by the authors was applied. The behavior of multipass welded joints during the entire thermal cycle, from welding to stress relief annealing, was consistently analyzed by this theory. The results of the analysis show a good, fundamentally coincidence with the experimental findings. The outline of the results and conclusions is as follows. (1) In the case of the material (2 1/4Cr-1Mo steel) furnished in this study, the creep strain rate during stress relief annealing below 575 0 C obeys the strain-hardening creep law using the transient creep and the one above 575 0 C obeys the power creep law using the stational creep. (2) In the transverse residual stress (σsub(x)) distribution after annealing, the location of the largest tensile stress on the top surface is about 15 mm away from the toe of weld, and the largest at the cross section is just below the finishing bead. These features are similar to those of welding residual stresses. But the stress distribution after annealing is smoother than one from welding. (3) The effectiveness of stress relief annealing depends greatly on the annealing temperature. For example, most of residual stresses are relieved at the heating stage with a heating rate of 30 0 C/hr. to 100 0 C/hr. if the annealing temperature is 650 0 C, but if the annealing temperature is 550 0 C, the annealing is not effective even with a longer holding time. (4) In the case of multipass welding residual stresses studied in this paper, the behaviors of high stresses during annealing are approximated by ones during anisothermal relaxation. (auth.)

  1. Thermoelectric properties by high temperature annealing

    Science.gov (United States)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Kumar, Shankar (Inventor); Lee, Hohyun (Inventor)

    2009-01-01

    The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.

  2. Coupled Quantum Fluctuations and Quantum Annealing

    Science.gov (United States)

    Hormozi, Layla; Kerman, Jamie

    We study the relative effectiveness of coupled quantum fluctuations, compared to single spin fluctuations, in the performance of quantum annealing. We focus on problem Hamiltonians resembling the the Sherrington-Kirkpatrick model of Ising spin glass and compare the effectiveness of different types of fluctuations by numerically calculating the relative success probabilities and residual energies in fully-connected spin systems. We find that for a small class of instances coupled fluctuations can provide improvement over single spin fluctuations and analyze the properties of the corresponding class. Disclaimer: This research was funded by ODNI, IARPA via MIT Lincoln Laboratory under Air Force Contract No. FA8721-05-C-0002. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of ODNI, IARPA, or the US Government.

  3. Angular filter refractometry analysis using simulated annealing.

    Science.gov (United States)

    Angland, P; Haberberger, D; Ivancic, S T; Froula, D H

    2017-10-01

    Angular filter refractometry (AFR) is a novel technique used to characterize the density profiles of laser-produced, long-scale-length plasmas [Haberberger et al., Phys. Plasmas 21, 056304 (2014)]. A new method of analysis for AFR images was developed using an annealing algorithm to iteratively converge upon a solution. A synthetic AFR image is constructed by a user-defined density profile described by eight parameters, and the algorithm systematically alters the parameters until the comparison is optimized. The optimization and statistical uncertainty calculation is based on the minimization of the χ 2 test statistic. The algorithm was successfully applied to experimental data of plasma expanding from a flat, laser-irradiated target, resulting in an average uncertainty in the density profile of 5%-20% in the region of interest.

  4. Inferring hierarchical clustering structures by deterministic annealing

    International Nuclear Information System (INIS)

    Hofmann, T.; Buhmann, J.M.

    1996-01-01

    The unsupervised detection of hierarchical structures is a major topic in unsupervised learning and one of the key questions in data analysis and representation. We propose a novel algorithm for the problem of learning decision trees for data clustering and related problems. In contrast to many other methods based on successive tree growing and pruning, we propose an objective function for tree evaluation and we derive a non-greedy technique for tree growing. Applying the principles of maximum entropy and minimum cross entropy, a deterministic annealing algorithm is derived in a meanfield approximation. This technique allows us to canonically superimpose tree structures and to fit parameters to averaged or open-quote fuzzified close-quote trees

  5. Quenching and annealing in the minority game

    Science.gov (United States)

    Burgos, E.; Ceva, Horacio; Perazzo, R. P. J.

    2001-05-01

    We study the bar attendance model (BAM) and a generalized version of the minority game (MG) in which a number of agents self organize to match an attendance that is fixed externally as a control parameter. We compare the probabilistic dynamics used in the MG with one that we introduce for the BAM that makes better use of the same available information. The relaxation dynamics of the MG leads the system to long lived, metastable (quenched) configurations in which adaptive evolution stops in spite of being far from equilibrium. On the contrary, the BAM relaxation dynamics avoids the MG glassy state, leading to an equilibrium configuration. Finally, we introduce in the MG model the concept of annealing by defining a new procedure with which one can gradually overcome the metastable MG states, bringing the system to an equilibrium that coincides with the one obtained with the BAM.

  6. Annealing effects on cathodoluminescence of zircon

    Science.gov (United States)

    Tsuchiya, Y.; Nishido, H.; Noumi, Y.

    2011-12-01

    U-Pb zircon dating (e. g., SHRIMP) is an important tool to interpret a history of the minerals at a micrometer-scale, where cathodoluminescence (CL) imaging allows us to recognize internal zones and domains with different chemical compositions and structural disorder at high spatial resolution. The CL of zircon is attributed by various types of emission centers, which are extrinsic ones such as REE impurities and intrinsic ones such as structural defects. Metamictization resulted from radiation damage to the lattice by alpha particles from the decay of U and Th mostly causes an effect on the CL features of zircon as a defect center. However, slightly radiation-damaged zircon, which is almost nondetectable by XRD, has not been characterized using CL method. In this study, annealing effects on CL of zircon has been investigated to clarify a recovery process of the damaged lattice at low radiation dose. A single crystal of zircon from Malawi was selected for CL measurements. It contains HfO2: 2.30 w.t %, U: 241 ppm and Th: 177 ppm. Two plate samples perpendicular to c and a axes were prepared for annealing experiments during 12 hours from room temperature to 1400 degree C. Color CL images were captured using a cold-cathode microscope (Luminoscope: Nuclide ELM-3R). CL spectral measurements were conducted using an SEM (JEOL: JSM-5410) combined with a grating monochromator (Oxford: Mono CL2) to measure CL spectra ranging from 300 to 800 nm in 1 nm steps with a temperature controlled stage. The dispersed CL was collected by a photoncounting method using a photomultiplier tube (Hamamatsu: R2228) and converted to digital data. All CL spectra were corrected for the total instrumental response. Spectral analysis reveals an anisotropy of the CL emission bands related to intrinsic defect center in blue region, radiation-induced defect center from 500 to 700 nm, and trivalent Dy impurity center at 480 and 580 nm, but their relative intensities are almost constant. CL on the

  7. PENJADWALAN FLOWSHOP DENGAN MENGGUNAKAN SIMULATED ANNEALING

    Directory of Open Access Journals (Sweden)

    Muhammad Firdaus

    2015-04-01

    Full Text Available This article apply a machine scheduling technique, named Simulate Annealing (SA to schedule 8 jobs and 5 machines to minimize makespan. A flowshop production flow is chosen as a case study to collect data and attempted to reduce jobs’ makespan. This article also does a sensitivity analysis to explore the implication of the changes of SA parameters as temperature. The results shows that the completion time of the jobs uses SA algoritm can decrease the completion time of the jobs, about 5 hours lower than the existing method. Moreover, total idle time of the machines is also reduced by 2.18 per cent using SA technique. Based on the sensitivity analysis, it indicates that there is a significant relationship between the changes of temperatures and makespan and computation time.

  8. Annealed n-vector p spin model

    International Nuclear Information System (INIS)

    Taucher, T.; Frankel, N.E.

    1992-01-01

    A disordered n-vector model with p spin interactions is introduced and studied in mean field theory for the annealed case. The complete solutions for the cases n = 2 and n = 3, is presented and explicit order parameter equations is given for all the stable solutions for arbitrary n. For all n and p was found on stable high temperature phase and one stable low temperature phase. The phase transition is of first order. For n = 2, it is continuous in the order parameters for p ≤ 4 and has a jump discontinuity in the order parameters if p > 4. For n = 3, it has a jump discontinuity in the order parameters for all p. 11 refs., 4 figs

  9. Note: A wide temperature range MOKE system with annealing capability.

    Science.gov (United States)

    Chahil, Narpinder Singh; Mankey, G J

    2017-07-01

    A novel sample stage integrated with a longitudinal MOKE system has been developed for wide temperature range measurements and annealing capabilities in the temperature range 65 K temperatures without adversely affecting the cryostat and minimizes thermal drift in position. In this system the hysteresis loops of magnetic samples can be measured simultaneously while annealing the sample in a magnetic field.

  10. Stored energy and annealing behavior of heavily deformed aluminium

    DEFF Research Database (Denmark)

    Kamikawa, Naoya; Huang, Xiaoxu; Kondo, Yuka

    2012-01-01

    It has been demonstrated in previous work that a two-step annealing treatment, including a low-temperature, long-time annealing and a subsequent high-temperature annealing, is a promising route to control the microstructure of a heavily deformed metal. In the present study, structural parameters...... are quantified such as boundary spacing, misorientation angle and dislocation density for 99.99% aluminium deformed by accumulative roll-bonding to a strain of 4.8. Two different annealing processes have been applied; (i) one-step annealing for 0.5 h at 100-400°C and (ii) two-step annealing for 6 h at 175°C...... followed by 0.5 h annealing at 200-600°C, where the former treatment leads to discontinuous recrystallization and the latter to uniform structural coarsening. This behavior has been analyzed in terms of the relative change during annealing of energy stored as elastic energy in the dislocation structure...

  11. Annealing behavior of solution grown polyethylene single crystals

    NARCIS (Netherlands)

    Loos, J.; Tian, M.

    2006-01-01

    The morphology evolution of solution grown polyethylene single crystals has been studied upon annealing below their melting temperature by using atomic force microscopy (AFM). AFM investigations have been performed ex situ, which means AFM investigations at room temperature after the annealing

  12. Principal and secondary luminescence lifetime components in annealed natural quartz

    International Nuclear Information System (INIS)

    Chithambo, M.L.; Ogundare, F.O.; Feathers, J.

    2008-01-01

    Time-resolved luminescence spectra from quartz can be separated into components with distinct principal and secondary lifetimes depending on certain combinations of annealing and measurement temperature. The influence of annealing on properties of the lifetimes related to irradiation dose and temperature of measurement has been investigated in sedimentary quartz annealed at various temperatures up to 900 deg. C. Time-resolved luminescence for use in the analysis was pulse stimulated from samples at 470 nm between 20 and 200 deg. C. Luminescence lifetimes decrease with measurement temperature due to increasing thermal effect on the associated luminescence with an activation energy of thermal quenching equal to 0.68±0.01eV for the secondary lifetime but only qualitatively so for the principal lifetime component. Concerning the influence of annealing temperature, luminescence lifetimes measured at 20 deg. C are constant at about 33μs for annealing temperatures up to 600 0 C but decrease to about 29μs when the annealing temperature is increased to 900 deg. C. In addition, it was found that lifetime components in samples annealed at 800 deg. C are independent of radiation dose in the range 85-1340 Gy investigated. The dependence of lifetimes on both the annealing temperature and magnitude of radiation dose is described as being due to the increasing importance of a particular recombination centre in the luminescence emission process as a result of dynamic hole transfer between non-radiative and radiative luminescence centres

  13. Annealing of KDP crystals in vacuum and under pressure

    International Nuclear Information System (INIS)

    Pritula, I.M.; Kolybayeva, M.I.; Salo, V.I.

    1997-01-01

    The effect of the high temperature annealing (T an > 230 degrees C) on the absorption spectra and laser damage threshold of KDP crystals was studied in the present paper. The experiments on isotermal annealing were performed under pressure in the atmosphere with specific properties. The composition of the atmosphere was selected to be chose to that of the desorbing gas component determined during annealing in vacuum. The mentioned conditions allowed to conduct annealing in the temperature range of 230 - 280 degrees C without degradation of the sample. The variations in the absorption spectra showed that the effect of the annealing is most strongly revealed in the short - wave region of the spectrum (λ -1 before and k=0.12 cm -1 after annealing) demonstrate that at temperatures ∼ 230 - 280 degrees C the processes ensuring the improvement of the structure quality are stimulated in the volume of the crystals: (a) before the annealing laser damage threshold was 1.5 10 11 W/cm 2 ; (b) after the annealing (t = 280 degrees C) it became 4 10 11 W/cm 2

  14. Effect of heat moisture treatment and annealing on physicochemical ...

    African Journals Online (AJOL)

    Red sorghum starch was physically modified by annealing and heat moisture treatment. The swelling power and solubility increased with increasing temperature range (60-90°), while annealing and heatmoisture treatment decreased swelling power and solubility of starch. Solubility and swelling were pH dependent with ...

  15. Nitrogen annealing of zirconium or titanium metals and their alloys

    International Nuclear Information System (INIS)

    Eucken, C.M.

    1982-01-01

    A method is described of continuously nitrogen annealing zirconium and titanium metals and their alloys at temperatures at from 525 0 to 875 0 C for from 1/2 minute to 15 minutes. The examples include the annealing of Zircaloy-4. (U.K.)

  16. Application of annealing for extension of WWER vessel lives

    International Nuclear Information System (INIS)

    Badanin, V.; Dragunow, Yu.G.; Fedorov, V.; Gorynin, I.; Nickolaev, V.

    1992-01-01

    The safe operation of nuclear power plants (NPP) is dependent upon the assurance that the reactor pressure vessel will not fail in a brittle manner when the effects of radiation embrittlement are taken into account. The recovery of the properties of the irradiated materials is an important way of extending the operating life of a reactor vessel. The intent of this paper is to demonstrate the efficiency of thermal annealing for the recovery of reactor vessel material properties and to present the implications for extended service life. In order to substantiate the application of annealing to the extensior of the service life of vessels, detailed investigations were conducted which involved thermal annealing temperature and time, fast neutron fluence, and metallurgical factors (i.e. impurity contents) on the recovery of properties after the annealing of irradiated materials. Similar studies were continued to determine predictive methods for radiation embrittlement after repeated annealings. In May 1987 the first pilot annealing of a commercial reactor vessel (Novo-Voronezhskaya, III, NPP) was performed. The development of the annealing equipment and investigations performed to test the annealing process proved successful, and an improved safe operation for the reactor vessel was thus atttained providing for an extended service life. (orig.)

  17. Susceptor and proximity rapid thermal annealing of InP

    International Nuclear Information System (INIS)

    Katz, A.; Pearton, S.J.; Geva, M.

    1990-01-01

    This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration

  18. Response of neutron-irradiated RPV steels to thermal annealing

    International Nuclear Information System (INIS)

    Iskander, S.K.; Sokolov, M.A.; Nanstad, R.K.

    1997-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPVs) is to thermally anneal them to restore the fracture toughness properties that have been degraded by neutron irradiation. This paper summarizes experimental results of work performed at the Oak Ridge National Laboratory (ORNL) to study the annealing response of several irradiated RPV steels

  19. Improved perovskite phototransistor prepared using multi-step annealing method

    Science.gov (United States)

    Cao, Mingxuan; Zhang, Yating; Yu, Yu; Yao, Jianquan

    2018-02-01

    Organic-inorganic hybrid perovskites with good intrinsic physical properties have received substantial interest for solar cell and optoelectronic applications. However, perovskite film always suffers from a low carrier mobility due to its structural imperfection including sharp grain boundaries and pinholes, restricting their device performance and application potential. Here we demonstrate a straightforward strategy based on multi-step annealing process to improve the performance of perovskite photodetector. Annealing temperature and duration greatly affects the surface morphology and optoelectrical properties of perovskites which determines the device property of phototransistor. The perovskite films treated with multi-step annealing method tend to form highly uniform, well-crystallized and high surface coverage perovskite film, which exhibit stronger ultraviolet-visible absorption and photoluminescence spectrum compare to the perovskites prepared by conventional one-step annealing process. The field-effect mobilities of perovskite photodetector treated by one-step direct annealing method shows mobility as 0.121 (0.062) cm2V-1s-1 for holes (electrons), which increases to 1.01 (0.54) cm2V-1s-1 for that treated with muti-step slow annealing method. Moreover, the perovskite phototransistors exhibit a fast photoresponse speed of 78 μs. In general, this work focuses on the influence of annealing methods on perovskite phototransistor, instead of obtains best parameters of it. These findings prove that Multi-step annealing methods is feasible to prepared high performance based photodetector.

  20. Annealing of Al implanted 4H silicon carbide

    International Nuclear Information System (INIS)

    Hallen, A; Suchodolskis, A; Oesterman, J; Abtin, L; Linnarsson, M

    2006-01-01

    Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1x10 20 cm -3 . These samples were then annealed at temperatures between 1500 and 1950 deg. C. A similar 4H SiC epitaxial sample was implanted by MeV Al ions to lower doses and annealed only at 200 and 400 deg. C. After annealing, cross-sections of the samples were characterized by scanning spreading resistance microscopy (SSRM). The results show that the resistivity of high-dose Al implanted samples has not reached a saturated value, even after annealing at the highest temperature. For the MeV Al implanted sample, the activation of Al has not yet started, but a substantial annealing of the implantation induced damage can be seen from the SSRM depth profiles

  1. Use of superheated steam to anneal the reactor pressure vessel

    International Nuclear Information System (INIS)

    Porowski, J.S.

    1994-01-01

    Thermal annealing of an embrittled Reactor Pressure Shell is the only recognized means for recovering material properties lost due to long-term exposure of the reactor walls to radiation. Reduced toughness of the material during operation is a major concern in evaluations of structural integrity of older reactors. Extensive studies performed within programs related to life extension of nuclear plants have confirmed that the thermal treatment of 850 degrees F for 168 hours on irradiated material essentially recovers material properties lost due to neutron exposure. Dry and wet annealing methods have been considered. Wet annealing involves operating the reactor at near design temperatures and pressures. Since the temperature of wet annealing must be limited to vessel design temperature of 650 degrees F, only partial recovery of the lost properties is achieved. Thus dry annealing was selected as an alternative for future development and industrial implementation to extend the safe life of reactors

  2. Crystallization degree change of expanded graphite by milling and annealing

    International Nuclear Information System (INIS)

    Tang Qunwei; Wu Jihuai; Sun Hui; Fang Shijun

    2009-01-01

    Expanded graphite was ball milled with a planetary mill in air atmosphere, and subsequently thermal annealed. The samples were characterized by using X-ray diffraction spectroscopy (XRD), scanning electron microscopy (SEM) and thermal gravimetric analysis (TGA). It was found that in the milling initial stage (less than 12 h), the crystallization degree of the expanded graphite declined gradually, but after milling more than 16 h, a recrystallization of the expanded graphite toke place, and ordered nanoscale expanded graphite was formed gradually. In the annealing initial stage, the non-crystallization of the graphite occurred, but, beyond an annealing time, recrystallizations of the graphite arise. Higher annealing temperature supported the recrystallization. The milled and annealed expanded graphite still preserved the crystalline structure as raw material and hold high thermal stability.

  3. Unified model of damage annealing in CMOS, from freeze-in to transient annealing

    International Nuclear Information System (INIS)

    Sander, H.H.; Gregory, B.L.

    Results of an experimental study at 76 0 K, are presented showing that radiation-produced holes in SiO 2 are immobile at this temperature. If an electric field is present in the SiO 2 during low temperature (76 0 K) irradiation to sweep out the mobile electrons, the holes will virtually all be trapped where created and produce a uniform positive charge density in the oxide. These results are the basis for concluding that if a complimentary p,n metal-oxide semiconductor (CMOS) device is irradiated for sufficient time at 76 0 K to build-in an appreciable field, further irradiation with gate bias removed will produce very little additional change in V/sub th/, since the field in the oxide tends to keep all generated electrons in the oxide where they recombine with trapped holes. Hence the hole trapping rate = the hole annihilation rate. The room-temperature annealing following a pulsed gamma exposure occurs in two regimes. The first recovery of V/sub th/ occurs prior to 10 -4 seconds. The magnitude of this very early-time recovery, at room temperature, is oxide-dependent, and oxide process dependent. The rate-of-annealing is what is truly different between a rad-hard and a rad-soft device, since annealing in the hardest devices occurs very quickly at room temperature. (U.S.)

  4. Annealing evolutionary stochastic approximation Monte Carlo for global optimization

    KAUST Repository

    Liang, Faming

    2010-01-01

    outperform simulated annealing, the genetic algorithm, annealing stochastic approximation Monte Carlo, and some other metaheuristics in function optimization. © 2010 Springer Science+Business Media, LLC.

  5. Mechanical properties and annealing texture of zirconium sheets

    International Nuclear Information System (INIS)

    Hanif-ur-Rehman; Khawaja, F.A.

    1996-01-01

    Mechanical properties like yield strength (YS), ultimate tensile strength(UTS), percentage elongation and annealing texture has been studied in sheets of commercially pure zirconium. The YS and UTS decrease as a function of annealing temperature up to 600 V, but both quantities have maximum value in sample annealed at 800 deg. C. The percentage elongation decreased with increase in annealing temperature up to 600 deg. C. A slight decrease and minimum value of percentage elongation was observed at 650 and 800 C respectively. The texture development in the annealed samples has been studied by the X-ray diffraction method. The sampled annealed at 800 deg. C showed a texture component (0001) [01 bar 10] with orientation density of about 8 times random, while the samples annealed at 600,650 and 700 deg. C showed a texture component (0001)[2 bar 110] with orientation density of about 5 times random. Thus it is concluded, that the texture component (0001)[2 bar 110] and (0001)[01 bar 10] at 650 and 800 geg. C respectively, may be the responsible for the increase in YS and UTS and decrease in percentage elongation at these temperatures. (author)

  6. Optical scattering characteristic of annealed niobium oxide films

    International Nuclear Information System (INIS)

    Lai Fachun; Li Ming; Wang Haiqian; Hu Hailong; Wang Xiaoping; Hou, J.G.; Song Yizhou; Jiang Yousong

    2005-01-01

    Niobium oxide (Nb 2 O 5 ) films with thicknesses ranging from 200 to 1600 nm were deposited on fused silica at room temperature by low frequency reactive magnetron sputtering system. In order to study the optical losses resulting from the microstructures, the films with 500 nm thickness were annealed at temperatures between 600 and 1100 deg. C, and films with thicknesses from 200 to 1600 nm were annealed at 800 deg. C. Scanning electron microscopy and atomic force microscopy images show that the root mean square of surface roughness, the grain size, voids, microcracks, and grain boundaries increase with increasing both the annealing temperature and the thickness. Correspondingly, the optical transmittance and reflectance decrease, and the optical loss increases. The mechanisms of the optical losses are discussed. The results suggest that defects in the volume and the surface roughness should be the major source for the optical losses of the annealed films by causing pronounced scattering. For samples with a determined thickness, there is a critical annealing temperature, above which the surface scattering contributes to the major optical losses. In the experimental scope, for the films annealed at temperatures below 900 deg. C, the major optical losses resulted from volume scattering. However, surface roughness was the major source for the optical losses when the 500-nm films were annealed at temperatures above 900 deg. C

  7. Extrapolation of zircon fission-track annealing models

    International Nuclear Information System (INIS)

    Palissari, R.; Guedes, S.; Curvo, E.A.C.; Moreira, P.A.F.P.; Tello, C.A.; Hadler, J.C.

    2013-01-01

    One of the purposes of this study is to give further constraints on the temperature range of the zircon partial annealing zone over a geological time scale using data from borehole zircon samples, which have experienced stable temperatures for ∼1 Ma. In this way, the extrapolation problem is explicitly addressed by fitting the zircon annealing models with geological timescale data. Several empirical model formulations have been proposed to perform these calibrations and have been compared in this work. The basic form proposed for annealing models is the Arrhenius-type model. There are other annealing models, that are based on the same general formulation. These empirical model equations have been preferred due to the great number of phenomena from track formation to chemical etching that are not well understood. However, there are two other models, which try to establish a direct correlation between their parameters and the related phenomena. To compare the response of the different annealing models, thermal indexes, such as closure temperature, total annealing temperature and the partial annealing zone, have been calculated and compared with field evidence. After comparing the different models, it was concluded that the fanning curvilinear models yield the best agreement between predicted index temperatures and field evidence. - Highlights: ► Geological data were used along with lab data for improving model extrapolation. ► Index temperatures were simulated for testing model extrapolation. ► Curvilinear Arrhenius models produced better geological temperature predictions

  8. Annealed Scaling for a Charged Polymer

    Energy Technology Data Exchange (ETDEWEB)

    Caravenna, F., E-mail: francesco.caravenna@unimib.it [Università degli Studi di Milano-Bicocca, Dipartimento di Matematica e Applicazioni (Italy); Hollander, F. den, E-mail: denholla@math.leidenuniv.nl [Leiden University, Mathematical Institute (Netherlands); Pétrélis, N., E-mail: nicolas.petrelis@univ-nantes.fr [Université de Nantes, Laboratoire de Mathématiques Jean Leray UMR 6629 (France); Poisat, J., E-mail: poisat@ceremade.dauphine.fr [Université Paris-Dauphine, PSL Research University, CEREMADE, UMR 7534 (France)

    2016-03-15

    This paper studies an undirected polymer chain living on the one-dimensional integer lattice and carrying i.i.d. random charges. Each self-intersection of the polymer chain contributes to the interaction Hamiltonian an energy that is equal to the product of the charges of the two monomers that meet. The joint probability distribution for the polymer chain and the charges is given by the Gibbs distribution associated with the interaction Hamiltonian. The focus is on the annealed free energy per monomer in the limit as the length of the polymer chain tends to infinity. We derive a spectral representation for the free energy and use this to prove that there is a critical curve in the parameter plane of charge bias versus inverse temperature separating a ballistic phase from a subballistic phase. We show that the phase transition is first order. We prove large deviation principles for the laws of the empirical speed and the empirical charge, and derive a spectral representation for the associated rate functions. Interestingly, in both phases both rate functions exhibit flat pieces, which correspond to an inhomogeneous strategy for the polymer to realise a large deviation. The large deviation principles in turn lead to laws of large numbers and central limit theorems. We identify the scaling behaviour of the critical curve for small and for large charge bias. In addition, we identify the scaling behaviour of the free energy for small charge bias and small inverse temperature. Both are linked to an associated Sturm-Liouville eigenvalue problem. A key tool in our analysis is the Ray-Knight formula for the local times of the one-dimensional simple random walk. This formula is exploited to derive a closed form expression for the generating function of the annealed partition function, and for several related quantities. This expression in turn serves as the starting point for the derivation of the spectral representation for the free energy, and for the scaling theorems

  9. Annealed Scaling for a Charged Polymer

    International Nuclear Information System (INIS)

    Caravenna, F.; Hollander, F. den; Pétrélis, N.; Poisat, J.

    2016-01-01

    This paper studies an undirected polymer chain living on the one-dimensional integer lattice and carrying i.i.d. random charges. Each self-intersection of the polymer chain contributes to the interaction Hamiltonian an energy that is equal to the product of the charges of the two monomers that meet. The joint probability distribution for the polymer chain and the charges is given by the Gibbs distribution associated with the interaction Hamiltonian. The focus is on the annealed free energy per monomer in the limit as the length of the polymer chain tends to infinity. We derive a spectral representation for the free energy and use this to prove that there is a critical curve in the parameter plane of charge bias versus inverse temperature separating a ballistic phase from a subballistic phase. We show that the phase transition is first order. We prove large deviation principles for the laws of the empirical speed and the empirical charge, and derive a spectral representation for the associated rate functions. Interestingly, in both phases both rate functions exhibit flat pieces, which correspond to an inhomogeneous strategy for the polymer to realise a large deviation. The large deviation principles in turn lead to laws of large numbers and central limit theorems. We identify the scaling behaviour of the critical curve for small and for large charge bias. In addition, we identify the scaling behaviour of the free energy for small charge bias and small inverse temperature. Both are linked to an associated Sturm-Liouville eigenvalue problem. A key tool in our analysis is the Ray-Knight formula for the local times of the one-dimensional simple random walk. This formula is exploited to derive a closed form expression for the generating function of the annealed partition function, and for several related quantities. This expression in turn serves as the starting point for the derivation of the spectral representation for the free energy, and for the scaling theorems

  10. Embrittlement recovery due to annealing of reactor pressure vessel steels

    International Nuclear Information System (INIS)

    Eason, E.D.; Wright, J.E.; Nelson, E.E.; Odette, G.R.; Mader, E.V.

    1996-01-01

    Embrittlement of reactor pressure vessels (RPVs) can be reduced by thermal annealing at temperatures higher than the normal operating conditions. Although such an annealing process has not been applied to any commercial plants in the United States, one US Army reactor, the BR3 plant in Belgium, and several plants in eastern Europe have been successfully annealed. All available Charpy annealing data were collected and analyzed in this project to develop quantitative models for estimating the recovery in 30 ft-lb (41 J) Charpy transition temperature and Charpy upper shelf energy over a range of potential annealing conditions. Pattern recognition, transformation analysis, residual studies, and the current understanding of the mechanisms involved in the annealing process were used to guide the selection of the most sensitive variables and correlating parameters and to determine the optimal functional forms for fitting the data. The resulting models were fitted by nonlinear least squares. The use of advanced tools, the larger data base now available, and insight from surrogate hardness data produced improved models for quantitative evaluation of the effects of annealing. The quality of models fitted in this project was evaluated by considering both the Charpy annealing data used for fitting and the surrogate hardness data base. The standard errors of the resulting recovery models relative to calibration data are comparable to the uncertainty in unirradiated Charpy data. This work also demonstrates that microhardness recovery is a good surrogate for transition temperature shift recovery and that there is a high level of consistency between the observed annealing trends and fundamental models of embrittlement and recovery processes

  11. Annealing effect on restoration of irradiation steel properties

    International Nuclear Information System (INIS)

    Vishkarev, O.M.; Kolesova, T.N.; Myasnikova, K.P.; Pecherin, A.M.; Shamardin, V.K.

    1986-01-01

    The effect of temperature and annealing time on the restoration of properties of the 15Kh2NMFAA and 15Kh2MFA steels after irradiation at 285 deg with the fluence of 6x10 23 neutr/m 2 (E>0.5 MeV) is studied. Microhardness (H μ ) restoration in the irradiated 15Kh2NMFAA steel is shown to start from 350 deg C annealing temperature. The complete microhardness restoration is observed at the annealing temperature of 500 deg C for 10 hours

  12. Structural study of conventional and bulk metallic glasses during annealing

    International Nuclear Information System (INIS)

    Pineda, E.; Hidalgo, I.; Bruna, P.; Pradell, T.; Labrador, A.; Crespo, D.

    2009-01-01

    Metallic glasses with conventional glass-forming ability (Al-Fe-Nd, Fe-Zr-B, Fe-B-Nb compositions) and bulk metallic glasses (Ca-Mg-Cu compositions) were studied by synchrotron X-ray diffraction during annealing throughout glass transition and crystallization temperatures. The analysis of the first diffraction peak position during the annealing process allowed us to follow the free volume change during relaxation and glass transition. The structure factor and the radial distribution function of the glasses were obtained from the X-ray measurements. The structural changes occurred during annealing are analyzed and discussed.

  13. Composition dependent thermal annealing behaviour of ion tracks in apatite

    Energy Technology Data Exchange (ETDEWEB)

    Nadzri, A., E-mail: allina.nadzri@anu.edu.au [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia); Schauries, D.; Mota-Santiago, P.; Muradoglu, S. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia); Trautmann, C. [GSI Helmholtz Centre for Heavy Ion Research, Planckstrasse 1, 64291 Darmstadt (Germany); Technische Universität Darmstadt, 64287 Darmstadt (Germany); Gleadow, A.J.W. [School of Earth Science, University of Melbourne, Melbourne, VIC 3010 (Australia); Hawley, A. [Australian Synchrotron, 800 Blackburn Road, Clayton, VIC 3168 (Australia); Kluth, P. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601 (Australia)

    2016-07-15

    Natural apatite samples with different F/Cl content from a variety of geological locations (Durango, Mexico; Mud Tank, Australia; and Snarum, Norway) were irradiated with swift heavy ions to simulate fission tracks. The annealing kinetics of the resulting ion tracks was investigated using synchrotron-based small-angle X-ray scattering (SAXS) combined with ex situ annealing. The activation energies for track recrystallization were extracted and consistent with previous studies using track-etching, tracks in the chlorine-rich Snarum apatite are more resistant to annealing than in the other compositions.

  14. Annealing-induced Fe oxide nanostructures on GaAs

    OpenAIRE

    Lu, Y X; Ahmad, E; Xu, Y B; Thompson, S M

    2005-01-01

    We report the evolution of Fe oxide nanostructures on GaAs(100) upon pre- and post-growth annealing conditions. GaAs nanoscale pyramids were formed on the GaAs surface due to wet etching and thermal annealing. An 8.0-nm epitaxial Fe film was grown, oxidized, and annealed using a gradient temperature method. During the process the nanostripes were formed, and the evolution has been demonstrated using transmission and reflection high energy electron diffraction, and scanning electron microscopy...

  15. Annealing of the BR3 reactor pressure vessel

    International Nuclear Information System (INIS)

    Fabry, A.; Motte, F.; Stiennon, G.; Debrue, J.; Gubel, P.; Van de Velde, J.; Minsart, G.; Van Asbroeck, P.

    1985-01-01

    The pressure vessel of the Belgian BR-3 plant, a small (11 MWe) PWR presently used for fuel testing programs and operated since 1962, was annealed during March, 1984. The anneal was performed under wet conditions for 168 hours at 650 0 F with core removal and within plant design margins justification for the anneal, summary of plant characteristics, description of materials sampling, summary of reactor physics and dosimetry, development of embrittlement trend curves, hypothesized pressurized and overcooling thermal shock accidents, and conclusions are provided in detail

  16. Radiation damage and annealing in plutonium tetrafluoride

    Science.gov (United States)

    McCoy, Kaylyn; Casella, Amanda; Sinkov, Sergey; Sweet, Lucas; McNamara, Bruce; Delegard, Calvin; Jevremovic, Tatjana

    2017-12-01

    A sample of plutonium tetrafluoride that was separated prior to 1966 at the Hanford Site in Washington State was analyzed at the Pacific Northwest National Laboratory (PNNL) in 2015 and 2016. The plutonium tetrafluoride, as received, was an unusual color and considering the age of the plutonium, there were questions about the condition of the material. These questions had to be answered in order to determine the suitability of the material for future use or long-term storage. Therefore, thermogravimetric/differential thermal analysis and X-ray diffraction evaluations were conducted to determine the plutonium's crystal structure, oxide content, and moisture content; these analyses reported that the plutonium was predominately amorphous and tetrafluoride, with an oxide content near ten percent. Freshly fluorinated plutonium tetrafluoride is known to be monoclinic. During the initial thermogravimetric/differential thermal analyses, it was discovered that an exothermic event occurred within the material near 414 °C. X-ray diffraction analyses were conducted on the annealed tetrafluoride. The X-ray diffraction analyses indicated that some degree of recrystallization occurred in conjunction with the 414 °C event. The following commentary describes the series of thermogravimetric/differential thermal and X-ray diffraction analyses that were conducted as part of this investigation at PNNL.

  17. Radiation damage and annealing in plutonium tetrafluoride

    Energy Technology Data Exchange (ETDEWEB)

    McCoy, Kaylyn; Casella, Amanda; Sinkov, Sergey; Sweet, Lucas; McNamara, Bruce; Delegard, Calvin; Jevremovic, Tatjana

    2017-12-01

    Plutonium tetrafluoride that was separated prior to 1966 at the Hanford Site in Washington State was analyzed at the Pacific Northwest National Laboratory (PNNL) in 2015 and 2016. The plutonium tetrafluoride, as received, was an off-normal color and considering the age of the plutonium, there were questions about the condition of the material. These questions had to be answered in order to determine the suitability of the material for future use or long-term storage. Therefore, Thermogravimetric/Differential Thermal Analysis and X-ray Diffraction evaluations were conducted to determine the plutonium’s crystal structure, oxide content, and moisture content; these analyses reported that the plutonium was predominately amorphous and tetrafluoride, with an oxide content near ten percent. Freshly fluorinated plutonium tetrafluoride is known to be monoclinic. During the initial Thermogravimetric/Differential Thermal analyses, it was discovered that an exothermic event occurred within the material near 414°C. X-ray Diffraction analyses were conducted on the annealed tetrafluoride. The X-ray Diffraction analyses indicated that some degree of recrystallization occurred in conjunction with the 414°C event. The following commentary describes the series of Thermogravimetric/Differential Thermal and X-ray Diffraction analyses that were conducted as part of this investigation at PNNL, in collaboration with the University of Utah Nuclear Engineering Program.

  18. Radiation damage and annealing in plutonium tetrafluoride

    International Nuclear Information System (INIS)

    McCoy, Kaylyn; Casella, Amanda; Sinkov, Sergey

    2017-01-01

    A sample of plutonium tetrafluoride that was separated prior to 1966 at the Hanford Site in Washington State was analyzed at the Pacific Northwest National Laboratory (PNNL) in 2015 and 2016. The plutonium tetrafluoride, as received, was an unusual color and considering the age of the plutonium, there were questions about the condition of the material. These questions had to be answered in order to determine the suitability of the material for future use or long-term storage. Therefore, thermogravimetric/differential thermal analysis and X-ray diffraction evaluations were conducted to determine the plutonium's crystal structure, oxide content, and moisture content; these analyses reported that the plutonium was predominately amorphous and tetrafluoride, with an oxide content near ten percent. Freshly fluorinated plutonium tetrafluoride is known to be monoclinic. And during the initial thermogravimetric/differential thermal analyses, it was discovered that an exothermic event occurred within the material near 414 °C. X-ray diffraction analyses were conducted on the annealed tetrafluoride. The X-ray diffraction analyses indicated that some degree of recrystallization occurred in conjunction with the 414 °C event. This commentary describes the series of thermogravimetric/differential thermal and X-ray diffraction analyses that were conducted as part of this investigation at PNNL.

  19. Effects of annealing on evaporated SnS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sakrani, Samsudi; Ismail, Bakar [Universiti Teknologi Malaysia, Skudai, Johor Bahru (Malaysia). Dept. of Physics

    1994-12-31

    The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound.

  20. Thermal annealing of an embrittled reactor pressure vessel

    International Nuclear Information System (INIS)

    Mager, T.R.; Dragunov, Y.G.; Leitz, C.

    1998-01-01

    As a result of the popularity of the Agencies report 'Neutron Irradiation Embrittlement of Reactor Pressure Vessel Steels' of 1975, it was decided that another report on this broad subject would be of use. In this report, background and contemporary views on specially identified areas of the subject are considered as self-contained chapters, written by experts. Chapter 11 deals with thermal annealing of an embrittled reactor pressure vessel. Anneal procedures for vessels from both the US and the former USSR are mentioned schematically, wet anneals at lower temperature and dry anneals above RPV design temperatures are investigated. It is shown that heat treatment is a means of recovering mechanical properties which were degraded by neutron radiation exposure, thus assuring reactor pressure vessel compliance with regulatory requirements

  1. Effects of annealing on evaporated SnS thin films

    International Nuclear Information System (INIS)

    Samsudi Sakrani; Bakar Ismail

    1994-01-01

    The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound

  2. Simulated annealing approach for solving economic load dispatch ...

    African Journals Online (AJOL)

    user

    thermodynamics to solve economic load dispatch (ELD) problems. ... evolutionary programming algorithm has been successfully applied for solving the ... concept behind the simulated annealing (SA) optimization is discussed in Section 3.

  3. Thermal annealing studies in muscovite and in quartz

    International Nuclear Information System (INIS)

    Roberts, J.H.; Gold, R.; Ruddy, F.H.

    1979-06-01

    In order to use Solid State Track Recorders (SSTR) in environments at elevated temperatures, it is necessary to know the thermal annealing characteristics of various types of SSTR. For applications in the nuclear energy program, the principal interest is focused upon the annealing of fission tracks in muscovite mica and in quartz. Data showing correlations between changes in track diameters and track densities as a function of annealing time and temperature will be presented for Amersil quartz glass. Similar data showing changes in track lengths and in track densities will be presented for mica. Time-temperature regions will be defined where muscovite mica can be accurately applied with negligible correction for thermal annealing

  4. Production and beam annealing of damage in carbon implanted silicon

    International Nuclear Information System (INIS)

    Kool, W.H.; Roosendaal, H.E.; Wiggers, L.W.; Saris, F.W.

    1978-01-01

    The annealing of damage introduced by 70 keV C implantation of Si is studied for impact of H + and He + beams in the energy interval 30 to 200 keV. For a good description of the annealing behaviour it is necessary to account for the damage introduction which occurs simultaneously. It turns out that the initial damage annealing rate is proportional to the amount of damage. The proportionality constant is related to a quantity introduced in an earlier paper in order to describe saturation effects in the damage production after H + or He + impact in unimplanted Si. This indicates that the same mechanism governs both processes: beam induced damage annealing and saturation of the damage introduction. (author)

  5. Solvent vapor annealing of an insoluble molecular semiconductor

    KAUST Repository

    Amassian, Aram

    2010-01-01

    Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film - pentacene on SiO 2 exposed to acetone vapor - using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material. © 2010 The Royal Society of Chemistry.

  6. Valence control of cobalt oxide thin films by annealing atmosphere

    International Nuclear Information System (INIS)

    Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

    2011-01-01

    The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  7. Annealing properties of potato starches with different degrees of phosphorylation

    DEFF Research Database (Denmark)

    Muhrbeck, Per; Svensson, E

    1996-01-01

    Changes in the gelatinization temperature interval and gelatinization enthalpy with annealing time at 50 degrees C were followed for a number of potato starch samples, with different degrees of phosphorylation, using differential scanning calorimetry. The gelatinization temperature increased...

  8. The theory of laser annealing of disordered semiconductors

    International Nuclear Information System (INIS)

    Noga, M.

    1980-01-01

    A theoretical explanation of the disorder-order phase transition concerning the ion implanted Si pulsed laser annealing is given. The phase transition is related to the Bose condensation of electron-hole plasmons. (author)

  9. Reduction of thermal quenching of biotite mineral due to annealing

    International Nuclear Information System (INIS)

    Kalita, J.M.; Wary, G.

    2014-01-01

    Graphical abstract: - Highlights: • Thermoluminescence of X-ray irradiate biotite was studied at various heating rates. • Thermal quenching was found to decrease with increase in annealing temperature. • Due to annealing one trap level was vanished and a new shallow trap level generated. • The new trap level contributes low thermally quenched thermoluminescence signal. - Abstract: Thermoluminescence (TL) of X-ray irradiated natural biotite annealed at 473, 573, 673 and 773 K were studied within 290–480 K at various linear heating rates (2, 4, 6, 8 and 10 K/s). A Computerized Glow Curve Deconvolution technique was used to study various TL parameters. Thermal quenching was found to be very high for un-annealed sample, however it decreased significantly with increase in annealing temperature. For un-annealed sample thermal quenching activation energy (W) and pre-exponential frequency factor (C) were found to be W = (2.71 ± 0.05) eV and C = (2.38 ± 0.05) × 10 12 s −1 respectively. However for 773 K annealed sample, these parameters were found to be W = (0.63 ± 0.03) eV, C = (1.75 ± 0.27) × 10 14 s −1 . Due to annealing, the initially present trap level at depth 1.04 eV was vanished and a new shallow trap state was generated at depth of 0.78 eV which contributes very low thermally quenched TL signal

  10. Annealing of chemical radiation damage in zirconium nitrate

    International Nuclear Information System (INIS)

    Mahamood, Aysha; Chandunni, E.; Nair, S.M.K.

    1979-01-01

    A kinetic study of the annealing of γ-irradiation damage in zirconium nitrate is presented. The annealing can be represented as a combination of a first order and a second order process. It is considered that the first order process is the combination of close correlated pairs of Osup(-) and NO fragments and the second order process involves the single reaction of random recombination of the fragments throughout the crystal. (auth.)

  11. Far-infrared spectroscopy of thermally annealed tungsten silicide films

    International Nuclear Information System (INIS)

    Amiotti, M.; Borghesi, A.; Guizzetti, G.; Nava, F.; Santoro, G.

    1991-01-01

    The far-infrared transmittance spectrum of tungsten silicide has been observed for the first time. WSi 2 polycrystalline films were prepared by coevaporation and chemical-vapour deposition on silicon wafers, and subsequently thermally annealed at different temperatures. The observed structures are interpreted, on the basis of the symmetry properties of the crystal, such as infrared-active vibrational modes. Moreover, the marked lineshape dependence on annealing temperature enables this technique to analyse the formation of the solid silicide phases

  12. Thermal annealing of amorphous Ti-Si-O thin films

    OpenAIRE

    Hodroj , Abbas; Chaix-Pluchery , Odette; Audier , Marc; Gottlieb , Ulrich; Deschanvres , Jean-Luc

    2008-01-01

    International audience; Ti-Si-O thin films were deposited using an aerosol chemical vapor deposition process at atmospheric pressure. The film structure and microstructure were analysed using several techniques before and after thermal annealing. Diffraction results indicate that the films remain X-ray amorphous after annealing whereas Fourier transform infrared spectroscopy gives evidence of a phase segregation between amorphous SiO2 and well crystallized anatase TiO2. Crystallization of ana...

  13. Absence of redox processes in the annealing of permanganates

    International Nuclear Information System (INIS)

    Dedgaonkar, V.G.; Mitra, S.; Kulkarni, S.A.

    1982-01-01

    Initial retentions upon neutron activation of alkaline earth and Ni, Cu, Zn and Cd permanganates were in the range 8-17 per cent. Isostructural hexahydrates of Mg, Zn and Cd permanganates showed identifical values of approximately 8 per cent. Radiation annealing was negligible and the extent of thermal annealing was hardly 2-5 per cent in all the salts. Probable mechanisms are discussed. (author)

  14. Simulated annealing image reconstruction for positron emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Sundermann, E; Lemahieu, I; Desmedt, P [Department of Electronics and Information Systems, University of Ghent, St. Pietersnieuwstraat 41, B-9000 Ghent, Belgium (Belgium)

    1994-12-31

    In Positron Emission Tomography (PET) images have to be reconstructed from moisy projection data. The noise on the PET data can be modeled by a Poison distribution. In this paper, we present the results of using the simulated annealing technique to reconstruct PET images. Various parameter settings of the simulated annealing algorithm are discussed and optimized. The reconstructed images are of good quality and high contrast, in comparison to other reconstruction techniques. (authors). 11 refs., 2 figs.

  15. Simulated annealing image reconstruction for positron emission tomography

    International Nuclear Information System (INIS)

    Sundermann, E.; Lemahieu, I.; Desmedt, P.

    1994-01-01

    In Positron Emission Tomography (PET) images have to be reconstructed from moisy projection data. The noise on the PET data can be modeled by a Poison distribution. In this paper, we present the results of using the simulated annealing technique to reconstruct PET images. Various parameter settings of the simulated annealing algorithm are discussed and optimized. The reconstructed images are of good quality and high contrast, in comparison to other reconstruction techniques. (authors)

  16. Stochastic search in structural optimization - Genetic algorithms and simulated annealing

    Science.gov (United States)

    Hajela, Prabhat

    1993-01-01

    An account is given of illustrative applications of genetic algorithms and simulated annealing methods in structural optimization. The advantages of such stochastic search methods over traditional mathematical programming strategies are emphasized; it is noted that these methods offer a significantly higher probability of locating the global optimum in a multimodal design space. Both genetic-search and simulated annealing can be effectively used in problems with a mix of continuous, discrete, and integer design variables.

  17. Population annealing: Theory and application in spin glasses

    OpenAIRE

    Wang, Wenlong; Machta, Jonathan; Katzgraber, Helmut G.

    2015-01-01

    Population annealing is an efficient sequential Monte Carlo algorithm for simulating equilibrium states of systems with rough free energy landscapes. The theory of population annealing is presented, and systematic and statistical errors are discussed. The behavior of the algorithm is studied in the context of large-scale simulations of the three-dimensional Ising spin glass and the performance of the algorithm is compared to parallel tempering. It is found that the two algorithms are similar ...

  18. Crystallinity and mechanical effects from annealing Parylene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, Nathan, E-mail: Nathan.Jackson@tyndall.ie [Tyndall National Institute, University College Cork, Cork (Ireland); Stam, Frank; O' Brien, Joe [Tyndall National Institute, University College Cork, Cork (Ireland); Kailas, Lekshmi [University of Limerick, Limerick (Ireland); Mathewson, Alan; O' Murchu, Cian [Tyndall National Institute, University College Cork, Cork (Ireland)

    2016-03-31

    Parylene is commonly used as thin film polymer for MEMS devices and smart materials. This paper investigates the impact on bulk properties due to annealing various types of Parylene films. A thin film of Parylene N, C and a hybrid material consisting of Parylene N and C were deposited using a standard Gorham process. The thin film samples were annealed at varying temperatures from room temperature up to 300 °C. The films were analyzed to determine the mechanical and crystallinity effects due to different annealing temperatures. The results demonstrate that the percentage of crystallinity and the full-width-half-maximum value on the 2θ X-ray diffraction scan increases as the annealing temperature increases until the melting temperature of the Parylene films was achieved. Highly crystalline films of 85% and 92% crystallinity were achieved for Parylene C and N respectively. Investigation of the hybrid film showed that the individual Parylene films behave independently to each other, and the crystallinity of one film had no significant impact to the other film. Mechanical testing showed that the elastic modulus and yield strength increase as a function of annealing, whereas the elongation-to-break parameter decreases. The change in elastic modulus was more significant for Parylene C than Parylene N and this is attributed to the larger change in crystallinity that was observed. Parylene C had a 112% increase in crystallinity compared to a 61% increase for Parylene N, because the original Parylene N material was more crystalline than Parylene C so the change of crystallinity was greater for Parylene C. - Highlights: • A hybrid material consisting of Parylene N and C was developed. • Parylene N has greater crystallinity than Parylene C. • Phase transition of Parylene N due to annealing results in increased crystallinity. • Annealing caused increased crystallinity and elastic modulus in Parylene films. • Annealed hybrid Parylene films crystallinity behave

  19. Processes in N-channel MOSFETs during postirradiation thermal annealing

    International Nuclear Information System (INIS)

    Pejovic, M.; Jaksic, A.; Ristic, G.; Baljosevic, B.

    1997-01-01

    The processes during postirradiation thermal annealing of γ-ray irradiated n-channel MOSFETs with both wet and dry gate oxides are investigated. For both analysed technologies, a so-called ''latent'' interface trap buildup is observed, followed at very late annealing times by the decrease in the interface-trap density. A model is proposed that successfully accounts for the experimental results. Implications of observed effects for total dose hardness assurance test methods implementation are discussed. (author)

  20. Significant improvement in the thermal annealing process of optical resonators

    Science.gov (United States)

    Salzenstein, Patrice; Zarubin, Mikhail

    2017-05-01

    Thermal annealing performed during process improves the quality of the roughness of optical resonators reducing stresses at the periphery of their surface thus allowing higher Q-factors. After a preliminary realization, the design of the oven and the electronic method were significantly improved thanks to nichrome resistant alloy wires and chopped basalt fibers for thermal isolation during the annealing process. Q-factors can then be improved.

  1. Conventional treatment planning optimization using simulated annealing

    International Nuclear Information System (INIS)

    Morrill, S.M.; Langer, M.; Lane, R.G.

    1995-01-01

    Purpose: Simulated annealing (SA) allows for the implementation of realistic biological and clinical cost functions into treatment plan optimization. However, a drawback to the clinical implementation of SA optimization is that large numbers of beams appear in the final solution, some with insignificant weights, preventing the delivery of these optimized plans using conventional (limited to a few coplanar beams) radiation therapy. A preliminary study suggested two promising algorithms for restricting the number of beam weights. The purpose of this investigation was to compare these two algorithms using our current SA algorithm with the aim of producing a algorithm to allow clinically useful radiation therapy treatment planning optimization. Method: Our current SA algorithm, Variable Stepsize Generalized Simulated Annealing (VSGSA) was modified with two algorithms to restrict the number of beam weights in the final solution. The first algorithm selected combinations of a fixed number of beams from the complete solution space at each iterative step of the optimization process. The second reduced the allowed number of beams by a factor of two at periodic steps during the optimization process until only the specified number of beams remained. Results of optimization of beam weights and angles using these algorithms were compared using a standard cadre of abdominal cases. The solution space was defined as a set of 36 custom-shaped open and wedged-filtered fields at 10 deg. increments with a target constant target volume margin of 1.2 cm. For each case a clinically-accepted cost function, minimum tumor dose was maximized subject to a set of normal tissue binary dose-volume constraints. For this study, the optimized plan was restricted to four (4) fields suitable for delivery with conventional therapy equipment. Results: The table gives the mean value of the minimum target dose obtained for each algorithm averaged over 5 different runs and the comparable manual treatment

  2. Optimization using quantum mechanics: quantum annealing through adiabatic evolution

    International Nuclear Information System (INIS)

    Santoro, Giuseppe E; Tosatti, Erio

    2006-01-01

    We review here some recent work in the field of quantum annealing, alias adiabatic quantum computation. The idea of quantum annealing is to perform optimization by a quantum adiabatic evolution which tracks the ground state of a suitable time-dependent Hamiltonian, where 'ℎ' is slowly switched off. We illustrate several applications of quantum annealing strategies, starting from textbook toy-models-double-well potentials and other one-dimensional examples, with and without disorder. These examples display in a clear way the crucial differences between classical and quantum annealing. We then discuss applications of quantum annealing to challenging hard optimization problems, such as the random Ising model, the travelling salesman problem and Boolean satisfiability problems. The techniques used to implement quantum annealing are either deterministic Schroedinger's evolutions, for the toy models, or path-integral Monte Carlo and Green's function Monte Carlo approaches, for the hard optimization problems. The crucial role played by disorder and the associated non-trivial Landau-Zener tunnelling phenomena is discussed and emphasized. (topical review)

  3. Structural evolution of tunneling oxide passivating contact upon thermal annealing.

    Science.gov (United States)

    Choi, Sungjin; Min, Kwan Hong; Jeong, Myeong Sang; Lee, Jeong In; Kang, Min Gu; Song, Hee-Eun; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan; Kim, Ka-Hyun

    2017-10-16

    We report on the structural evolution of tunneling oxide passivating contact (TOPCon) for high efficient solar cells upon thermal annealing. The evolution of doped hydrogenated amorphous silicon (a-Si:H) into polycrystalline-silicon (poly-Si) by thermal annealing was accompanied with significant structural changes. Annealing at 600 °C for one minute introduced an increase in the implied open circuit voltage (V oc ) due to the hydrogen motion, but the implied V oc decreased again at 600 °C for five minutes. At annealing temperature above 800 °C, a-Si:H crystallized and formed poly-Si and thickness of tunneling oxide slightly decreased. The thickness of the interface tunneling oxide gradually decreased and the pinholes are formed through the tunneling oxide at a higher annealing temperature up to 1000 °C, which introduced the deteriorated carrier selectivity of the TOPCon structure. Our results indicate a correlation between the structural evolution of the TOPCon passivating contact and its passivation property at different stages of structural transition from the a-Si:H to the poly-Si as well as changes in the thickness profile of the tunneling oxide upon thermal annealing. Our result suggests that there is an optimum thickness of the tunneling oxide for passivating electron contact, in a range between 1.2 to 1.5 nm.

  4. In-place thermal annealing of nuclear reactor pressure vessels

    International Nuclear Information System (INIS)

    Server, W.L.

    1985-04-01

    Radiation embrittlement of ferritic pressure vessel steels increases the ductile-brittle transition temperature and decreases the upper shelf level of toughness as measured by Charpy impact tests. A thermal anneal cycle well above the normal operating temperature of the vessel can restore most of the original Charpy V-notch energy properties. The Amry SM-1A test reactor vessel was wet annealed in 1967 at less than 343 0 C (650 0 F), and wet annealing of the Belgian BR-3 reactor vessel at 343 0 C (650 0 F) has recently taken place. An industry survey indicates that dry annealing a reactor vessel in-place at temperatures as high as 454 0 C (850 0 F) is feasible, but solvable engineering problems do exist. Economic considerations have not been totally evaluated in assessing the cost-effectiveness of in-place annealing of commercial nuclear vessels. An American Society for Testing and Materials (ASTM) task group is upgrading and revising guide ASTM E 509-74 with emphasis on the materials and surveillance aspects of annealing rather than system engineering problems. System safety issues are the province of organizations other than ASTM (e.g., the American Society of Mechanical Engineers Boiler and Pressure Vessel Code body)

  5. Enhanced dielectric and electrical properties of annealed PVDF thin film

    Science.gov (United States)

    Arshad, A. N.; Rozana, M. D.; Wahid, M. H. M.; Mahmood, M. K. A.; Sarip, M. N.; Habibah, Z.; Rusop, M.

    2018-05-01

    Poly (vinylideneflouride) (PVDF) thin films were annealed at various annealing temperatures ranging from 70°C to 170°C. This study demonstrates that PVDF thin films annealed at temperature of 70°C (AN70) showed significant enhancement in their dielectric constant (14) at frequency of 1 kHz in comparison to un-annealed PVDF (UN-PVDF), dielectric constant (10) at the same measured frequency. As the annealing temperature was increased from 90°C (AN90) to 150°C (AN150), the dielectric constant value of PVDF thin films was observed to decrease gradually to 11. AN70 also revealed low tangent loss (tan δ) value at similar frequency. With respect to its resistivity properties, the values were found to increase from 1.98×104 Ω.cm to 3.24×104 Ω.cm for AN70 and UN-PVDF films respectively. The improved in dielectric constant, with low tangent loss and high resistivity value suggests that 70°C is the favorable annealing temperature for PVDF thin films. Hence, AN70 is a promising film to be utilized for application in electronic devices such as low frequency capacitor.

  6. Annealing effects in low upper-shelf welds (series 9)

    International Nuclear Information System (INIS)

    Iskander, S.K.; Nanstad, R.K.

    1995-01-01

    The purpose of the Ninth Irradiation Series is to evaluate the correlation between fracture toughness and CVN impact energy during irradiation, annealing, and reirradiation (IAR). Results of annealing CVN specimens from the low-USE welds from the Midland beltline and nozzle course welds, as well as HSST plate 02 and HSSI weld 73W are given. Also presented is the effect of annealing on the initiation fracture toughness of annealed material from Midland beltline weld and HSST plate 02. The results from capsule 10-5 specimens of weld 73W confirm those previously obtained on the so-called undersize specimens that were irradiated in the Fifth Irradiation Series, namely that the recovery due to annealing at 343 degrees C (650 degrees F) for 1 week is insignificant. The fabrication of major components for the IAR facility for two positions on the east side of the FNR at the University of Michigan has begun. Fabrication of two reusable capsules (one for temperature verification and the other for dosimetry verification), as well as two capsules for IAR, studies is also under way. The design of a reusable capsule capable of reirradiating previously irradiated and annealed CVN and 1T C(T) specimens is also progressing. The data acquisition and control (DAC) instrumentation for the first two IAR facilities is essentially complete and awaiting completion of the IAR facilities and temperature test capsule for checkout and control algorithm development

  7. Formation of oxygen related donors in step-annealed CZ–silicon

    Indian Academy of Sciences (India)

    The effect of step-annealing necessitated by the difficulties being faced in the long duration annealing treatments to be given to CZ–silicon has been studied. One pre-anneal of 10 h followed by annealing of 10 h causes a decrease in the absorption coefficient for carbon (c). Oxygen and carbon both accelerate thermal ...

  8. Study of annealing effects in Al–Sb bilayer thin films

    Indian Academy of Sciences (India)

    There are three methods to prepare compound semiconductor systems: bilayer annealing (Singh and Vijay 2004a), rapid thermal annealing (Singh and Vijay 2004b) and ion beam mixing (Dhar et al 2003). The annealing and ion beam mixing were found to show inferior mixing effects compared to rapid thermal annealing.

  9. Comparison of pulsed electron beam-annealed and pulsed ruby laser-annealed ion-implanted silicon

    International Nuclear Information System (INIS)

    Wilson, S.R.; Appleton, B.R.; White, C.W.; Narayan, J.; Greenwald, A.C.

    1978-11-01

    Recently two new techniques, pulsed electron beam annealing and pulsed laser annealing, have been developed for processing ion-implanted silicon. These two types of anneals have been compared using ion-channeling, ion back-scattering, and transmission electron microscopy (TEM). Single crystal samples were implanted with 100 keV As + ions to a dose of approx. 1 x 10 16 ions/cm 2 and subsequently annealed by either a pulsed Ruby laser or a pulsed electron beam. Our results show in both cases that the near-surface region has melted and regrown epitaxially with nearly all of the implanted As (97 to 99%) incroporated onto lattice sites. The analysis indicates that the samples are essentially defect free and have complete electrical recovery

  10. Influence of rolling and annealing conditions on texture and mechanical properties of zirconium (1960)

    International Nuclear Information System (INIS)

    Orssaud, J.

    1958-06-01

    Rolling and annealing textures of KROLL zirconium samples at several rolling rates were studied by pole figures with an automatic recorder versus the position in the sheet thickness. Tensile tests, hardness measurements and micrographic examinations allowed to study the evolution of the recrystallization and the variation of the mechanical properties after rolling and/or annealing. Annealing textures slightly varies with the annealing temperature. Annealing at 500 deg. C gives several peculiarities. This temperature seems characteristic in the study of zirconium. (author) [fr

  11. Liquid nitrogen enhancement of partially annealed fission tracks in glass

    International Nuclear Information System (INIS)

    Pilione, L.J.; Gold, D.P.

    1976-01-01

    It is known that the number density of fission tracks in solids is reduced if the sample is heated before chemical etching, and the effect of annealing must be allowed for before an age can be assigned to the sample. The extent of annealing can be determined by measuring the reduction of track parameters (diameter and/or length) and comparison with unannealed tracks. Correct ages can be obtained by careful calibration studies of track density reduction against track diameter or length reduction at different annealing temperatures and times. For crystallised minerals, however, the resulting correction techniques are not generally valid. In the experimental work described glass samples were partially annealed and then immersed in liquid N 2 for various periods, and it was shown that the properties of the glass and the track parameters could be altered so as to observe tracks that would normally be erased by annealing. The results of track density measurements against liquid N 2 immersion times are shown graphically. A gain of about 40% was achieved after 760 hours immersion time. The size of the tracks was not noticeably affected by the immersion. It was thought that thermal shock might be the cause of the track enhancement, but it was found that repeated immersion for about 2 hours did not lead to an increase in track density. Other studies suggest that the mechanism that erases the tracks through annealing may be partially reversed when the temperature of the sample is significantly lowered for a sufficient length of time. Further work is under way to find whether or not the process of enhancement is a reversal of the annealing process. Similar enhancement effects using liquid N 2 have been observed for d-particle tracks in polycarbonate detectors. (U.K.)

  12. The influence of annealing atmosphere on the material properties of sol-gel derived SnO2:Sb films before and after annealing

    International Nuclear Information System (INIS)

    Jeng, Jiann-Shing

    2012-01-01

    SnO 2 films with and without Sb doping were prepared by the sol-gel spin-coating method. Material properties of the SnO 2 films with different Sb contents were investigated before and after annealing under O 2 or N 2 . When SnO 2 films are annealed under N 2 or O 2 , the resistivity decreases with increasing annealing temperature, which may be related to the increased crystallinity and reduced film defects. The intensity of SnO 2 peaks for both O 2 - and N 2 -annealed films increases as the annealing temperature increases. Small nodules are revealed on the surface of SnO 2 films after annealing in N 2 or O 2 atmospheres, and some voids are present on the surface of N 2 -annealed SnO 2 films. After doping with Sb, the resistivity of SnO 2 films after annealing in O 2 is greater than that of N 2 -annealed SnO 2 films. The surface morphology of SnO 2 films incorporating different molar ratios of Sb after annealing are similar to that of as-spun SnO 2 films with adding Sb. There were no voids found on the surfaces of N 2 -annealed SnO 2 :Sb films. In addition, the peak intensity of SnO 2 :Sb films after O 2 -annealing is higher than those films after N 2 -annealing. The chemical binding states and Hall mobility of the high-temperature annealed SnO 2 films without and with adding Sb are also related to the annealing atmospheres. This study discusses the connection among the material properties of the SnO 2 films with different Sb contents and how these properties are influenced by the Sb-doping concentration and the annealing atmospheres of SnO 2 films.

  13. Vessel annealing. Will it become a routine procedure?

    International Nuclear Information System (INIS)

    Davies, M.

    1995-01-01

    The effect of neutron radiation on the reactor pressure vessel and the influence of annealing performed to eliminate this effect are explained. Some practical examples are given. A simple heat treatment at 450 degC for 168 h is sufficient to eliminate a major fraction of the radiation effect in the displacement of the transition temperature from the brittle state to the tough state. Some observations indicate that at this temperature, excessive energy recovery takes place at the upper toughness limit in the Charpy diagram. The annealing furnace manufactured by the SKODA company is described. The furnace consists of heating elements in 13 zones and 5 heating sections. The maximum power of each element is 75 kW, the total power of the furnace is 975 kW. The annealing procedure and its results are briefly outlined for the reactor pressure vessel at unit 2 of the Jaslovske Bohunice NPP. Reactor pressure vessel annealing is proposed for the Marble Hill NPP which has been shut down. Preparatory activities for annealing are also under way at the Loviisa NPP. (J.B.)

  14. Kinetics of annealing of irradiated surveillance pressure vessel steel

    International Nuclear Information System (INIS)

    Harvey, D.J.; Wechsler, M.S.

    1982-01-01

    Indentation hardness measurements as a function of annealing were made on broken halves of Charpy impact surveillance samples. The samples had been irradiated in commercial power reactors to a neutron fluence of approximately 1 x 10 18 neutrons per cm 2 , E > 1 MeV, at a temperature of about 300 0 C (570 0 F). Results are reported for the weld metal, which showed greater radiation hardening than the base plate or heat-affected zone material. Isochronal and isothermal anneals were conducted on the irradiated surveillance samples and on unirradiated control samples. No hardness changes upon annealing occurred for the control samples. The recovery in hardness for the irradiated samples took place mostly between 400 and 500 0 C. Based on the Meechan-Brinkman method of analysis, the activation energy for annealing was found to be 0.60 +- 0.06 eV. According to computer simulation calculations of Beeler, the activation energy for migration of vacancies in alpha iron is about 0.67 eV. Therefore, the results of this preliminary study appear to be consistent with a mechanism of annealing of radiation damage in pressure vessel steels based on the migration of radiation-produced lattice vacancies

  15. High pressure annealing of Europium implanted GaN

    KAUST Repository

    Lorenz, K.; Miranda, S. M. C.; Alves, E.; Roqan, Iman S.; O'Donnell, K. P.; Bokowski, M.

    2012-01-01

    GaN epilayers were implanted with Eu to fluences of 1×10^13 Eu/cm2 and 1×10^15 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  16. Laser annealing heals radiation damage in avalanche photodiodes

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Jin Gyu [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); Anisimova, Elena; Higgins, Brendon L.; Bourgoin, Jean-Philippe [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Jennewein, Thomas [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada); Canadian Institute for Advanced Research, Quantum Information Science Program, Toronto, ON (Canada); Makarov, Vadim [University of Waterloo, Institute for Quantum Computing, Waterloo, ON (Canada); University of Waterloo, Department of Electrical and Computer Engineering, Waterloo, ON (Canada); University of Waterloo, Department of Physics and Astronomy, Waterloo, ON (Canada)

    2017-12-15

    Avalanche photodiodes (APDs) are a practical option for space-based quantum communications requiring single-photon detection. However, radiation damage to APDs significantly increases their dark count rates and thus reduces their useful lifetimes in orbit. We show that high-power laser annealing of irradiated APDs of three different models (Excelitas C30902SH, Excelitas SLiK, and Laser Components SAP500S2) heals the radiation damage and several APDs are restored to typical pre-radiation dark count rates. Of nine samples we test, six APDs were thermally annealed in a previous experiment as another solution to mitigate the radiation damage. Laser annealing reduces the dark count rates further in all samples with the maximum dark count rate reduction factor varying between 5.3 and 758 when operating at -80 C. This indicates that laser annealing is a more effective method than thermal annealing. The illumination power to reach these reduction factors ranges from 0.8 to 1.6 W. Other photon detection characteristics, such as photon detection efficiency, timing jitter, and afterpulsing probability, fluctuate but the overall performance of quantum communications should be largely unaffected by these variations. These results herald a promising method to extend the lifetime of a quantum satellite equipped with APDs. (orig.)

  17. Contribution to implanted silicon layers and their annealing

    International Nuclear Information System (INIS)

    Combasson, J.-L.

    1976-01-01

    Defects created by boron implantation in silicon have been characterized by measuring the diffusion coefficient during annealing. Implanted impurity distributions were calculated after analyzing the hypotheses relating to charged particle slowing down through matter. Profiles are predicted with a good accuracy, by replacing occasionally the electronic stopping law by an empirical law. The asymmetries predicted are generally observed but deviations may occur for crystalline targets, or when the ion is heavy with regard to the substrate (in the event the Thomas-Fermi potential is not yet valid due to the high impact parameters). When deviations are neglected, the displacement cascade from implantation is represented by a damage profile proportional to the distribution of the Frenkel pairs. The annealing of the implanted layers is characterized by three annealing stages. The first one (400 deg C-600 deg C) is imputed to divacancy annealing associated to the formation and migration of boron-vacancy complexes. The second one (500 deg C-650 deg C) is characterized by the Watkins replacement mechanism. At high temperatures, when the annealing duration is longer than that of precipitation, interstitial loops are dissolved, and the thermal diffusion of boron atoms involves the vacancy mechanism of thermal diffusion [fr

  18. Experimental quantum annealing: case study involving the graph isomorphism problem.

    Science.gov (United States)

    Zick, Kenneth M; Shehab, Omar; French, Matthew

    2015-06-08

    Quantum annealing is a proposed combinatorial optimization technique meant to exploit quantum mechanical effects such as tunneling and entanglement. Real-world quantum annealing-based solvers require a combination of annealing and classical pre- and post-processing; at this early stage, little is known about how to partition and optimize the processing. This article presents an experimental case study of quantum annealing and some of the factors involved in real-world solvers, using a 504-qubit D-Wave Two machine and the graph isomorphism problem. To illustrate the role of classical pre-processing, a compact Hamiltonian is presented that enables a reduced Ising model for each problem instance. On random N-vertex graphs, the median number of variables is reduced from N(2) to fewer than N log2 N and solvable graph sizes increase from N = 5 to N = 13. Additionally, error correction via classical post-processing majority voting is evaluated. While the solution times are not competitive with classical approaches to graph isomorphism, the enhanced solver ultimately classified correctly every problem that was mapped to the processor and demonstrated clear advantages over the baseline approach. The results shed some light on the nature of real-world quantum annealing and the associated hybrid classical-quantum solvers.

  19. High pressure annealing of Europium implanted GaN

    KAUST Repository

    Lorenz, K.

    2012-02-09

    GaN epilayers were implanted with Eu to fluences of 1×10^13 Eu/cm2 and 1×10^15 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  20. On simulated annealing phase transitions in phylogeny reconstruction.

    Science.gov (United States)

    Strobl, Maximilian A R; Barker, Daniel

    2016-08-01

    Phylogeny reconstruction with global criteria is NP-complete or NP-hard, hence in general requires a heuristic search. We investigate the powerful, physically inspired, general-purpose heuristic simulated annealing, applied to phylogeny reconstruction. Simulated annealing mimics the physical process of annealing, where a liquid is gently cooled to form a crystal. During the search, periods of elevated specific heat occur, analogous to physical phase transitions. These simulated annealing phase transitions play a crucial role in the outcome of the search. Nevertheless, they have received comparably little attention, for phylogeny or other optimisation problems. We analyse simulated annealing phase transitions during searches for the optimal phylogenetic tree for 34 real-world multiple alignments. In the same way in which melting temperatures differ between materials, we observe distinct specific heat profiles for each input file. We propose this reflects differences in the search landscape and can serve as a measure for problem difficulty and for suitability of the algorithm's parameters. We discuss application in algorithmic optimisation and as a diagnostic to assess parameterisation before computationally costly, large phylogeny reconstructions are launched. Whilst the focus here lies on phylogeny reconstruction under maximum parsimony, it is plausible that our results are more widely applicable to optimisation procedures in science and industry. Copyright © 2016 The Authors. Published by Elsevier Inc. All rights reserved.

  1. Non-stoquastic Hamiltonians in quantum annealing via geometric phases

    Science.gov (United States)

    Vinci, Walter; Lidar, Daniel A.

    2017-09-01

    We argue that a complete description of quantum annealing implemented with continuous variables must take into account the non-adiabatic Aharonov-Anandan geometric phase that arises when the system Hamiltonian changes during the anneal. We show that this geometric effect leads to the appearance of non-stoquasticity in the effective quantum Ising Hamiltonians that are typically used to describe quantum annealing with flux qubits. We explicitly demonstrate the effect of this geometric non-stoquasticity when quantum annealing is performed with a system of one and two coupled flux qubits. The realization of non-stoquastic Hamiltonians has important implications from a computational complexity perspective, since it is believed that in many cases quantum annealing with stoquastic Hamiltonians can be efficiently simulated via classical algorithms such as Quantum Monte Carlo. It is well known that the direct implementation of non-stoquastic Hamiltonians with flux qubits is particularly challenging. Our results suggest an alternative path for the implementation of non-stoquasticity via geometric phases that can be exploited for computational purposes.

  2. Pulsed Q-switched ruby laser annealing of Bi implanted Si crystals investigated by channeling

    International Nuclear Information System (INIS)

    Deutch, B.I.; Shih-Chang, T.; Shang-Hwai, L.; Zu-Yao, Z.; Jia-Zeng, H.; Ren-Zhi, D.; Te-Chang, C.; De-Xin, C.

    1979-01-01

    Channeling was used to investigate pulsed, Q switched ruby-laser annealed and thermally annealed Si single crystals implanted with 40-keV Bi ions to a dose of 10 15 atoms/cm 2 . After thermal annealing, residual damage decreased with increasing annealing temperature to a minimum value of 30% at 900 0 C. The Bi atoms in substitutional sites reached a maximum value (50%) after annealing at 750 0 C but decreased with increasing annealing temperature. Out diffusion of Bi atoms occurred at temperatures higher than 625 0 C. For comparison, the residual damage disappeared almost completely after pulsed-laser annealing (30 ns pulse width, Energy, E = 3J/cm 2 ). The concentration of Bi in Si exceeded its solid solubility by an order of magnitude; 95% of Bi atoms were annealed to substitutional sites. Laser pulses of different energies were used to investigate the efficiency of annealing. (author)

  3. Effects of annealing on the corrosion behavior and mechanical properties of Ti-Al-V alloy

    International Nuclear Information System (INIS)

    Kim, T. K.; Choi, B. S.; Baek, J. H.; Choi, B. K.; Jeong, Y. H.; Lee, D. J.; Jang, M. H.; Jeong, Y. H.

    2002-01-01

    In order to determine the annealing condition after cold rolling, the effects of annealing on the corrosion behavior and mechanical properties of Ti-Al-V alloy were evaluated. The results of tensile tests at room temperature showed that the strengths and the ductility were almost independent of the annealing temperature. The results of hardness test also revealed that the hardness was independent of the annealing, However, the results of corrosion test in an ammoniated water of pH 9.98 at 360 .deg. C showed that the corrosion resistance depended on the annealing temperature, and the corrosion rate was accelerated with increasing annealing temperature. Hydrogen contents absorbed during the corrosion test of 120 days also increased with the annealing temperature. It may be attributed to the growth of α' precipitates by annealing. It is thus suggested that the lower annealing temperatures provide the better corrosion properties without degrading the tensile properties

  4. Reduction of Annealing Times for Energy Conservation in Aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Anthony D. Rollett; Hasso Weiland; Mohammed Alvi; Abhijit Brahme

    2005-08-31

    Carnegie Mellon University was teamed with the Alcoa Technical Center with support from the US Dept. of Energy (Office of Industrial Technology) and the Pennsylvania Technology Investment Authority (PTIA) to make processing of aluminum less costly and more energy efficient. Researchers in the Department of Materials Science and Engineering have investigated how annealing processes in the early stages of aluminum processing affect the structure and properties of the material. Annealing at high temperatures consumes significant amounts of time and energy. By making detailed measurements of the crystallography and morphology of internal structural changes they have generated new information that will provide a scientific basis for shortening processing times and consuming less energy during annealing.

  5. Morphology and annealing kinetics of ion tracks in minerals

    Directory of Open Access Journals (Sweden)

    Ewing R. C.

    2012-10-01

    Full Text Available We have studied the morphology and annealing kinetics of ion tracks in Durango apatite using synchrotron small angle X-ray scattering. The non-destructive, artefact-free technique enables us to determine the track radii with a resolution of fractions of a nanometre. The tracks were generated using different heavy ions with energies between 185 MeV and 2.6 GeV. The track morphology is consistent with the formation of long cylindrical amorphous tracks. The annealing kinetics, measured by SAXS in combination with ex situ and in situ annealing experiments, suggests structural relaxation followed by recrystallisation of the damaged material. The measurement methodology shown here provides a new means for in-depth studies of ion-track formation in minerals under a wide variety of geological conditions.

  6. Temperature distribution in graphite during annealing in air cooled reactors

    International Nuclear Information System (INIS)

    Oliveira Avila, C.R. de.

    1989-01-01

    A model for the evaluation temperature distributions in graphite during annealing operation in graphite. Moderated an-cooled reactors, is presented. One single channel and one dimension for air and graphite were considered. A numerical method based on finite control volumes was used for partioning the mathematical equations. The problem solution involves the use of unsteady equations of mass, momentum and energy conservation for air, and energy conservation for graphite. The source term was considered as stored energy release during annealing for describing energy conservation in the graphite. The coupling of energy conservation equations in air and graphite is performed by the heat transfer term betwen air and graphite. The results agree with experimental data. A sensitivity analysis shown that the termal conductivity of graphite and the maximum inlet channel temperature have great effect on the maximum temperature reached in graphite during the annealing. (author)

  7. Toward understanding dynamic annealing processes in irradiated ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Myers, Michael Thomas [Texas A & M Univ., College Station, TX (United States)

    2013-05-01

    High energy particle irradiation inevitably generates defects in solids. The ballistic formation and thermalization of the defect creation process occur rapidly, and are believed to be reasonably well understood. However, knowledge of the evolution of defects after damage cascade thermalization, referred to as dynamic annealing, is quite limited. Unraveling the mechanisms associated with dynamic annealing is crucial since such processes play an important role in the formation of stable postirradiation disorder in ion-beam-processing of semiconductors, and determines the “radiation tolerance” of many nuclear materials. The purpose of this dissertation is to further our understanding of the processes involved in dynamic annealing. In order to achieve this, two main tasks are undertaken.

  8. Molecular dynamics simulation of annealed ZnO surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Min, Tjun Kit; Yoon, Tiem Leong [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Lim, Thong Leng [Faculty of Engineering and Technology, Multimedia University, Melaka Campus, 75450 Melaka (Malaysia)

    2015-04-24

    The effect of thermally annealing a slab of wurtzite ZnO, terminated by two surfaces, (0001) (which is oxygen-terminated) and (0001{sup ¯}) (which is Zn-terminated), is investigated via molecular dynamics simulation by using reactive force field (ReaxFF). We found that upon heating beyond a threshold temperature of ∼700 K, surface oxygen atoms begin to sublimate from the (0001) surface. The ratio of oxygen leaving the surface at a given temperature increases as the heating temperature increases. A range of phenomena occurring at the atomic level on the (0001) surface has also been explored, such as formation of oxygen dimers on the surface and evolution of partial charge distribution in the slab during the annealing process. It was found that the partial charge distribution as a function of the depth from the surface undergoes a qualitative change when the annealing temperature is above the threshold temperature.

  9. Chaotic Multiquenching Annealing Applied to the Protein Folding Problem

    Directory of Open Access Journals (Sweden)

    Juan Frausto-Solis

    2014-01-01

    Full Text Available The Chaotic Multiquenching Annealing algorithm (CMQA is proposed. CMQA is a new algorithm, which is applied to protein folding problem (PFP. This algorithm is divided into three phases: (i multiquenching phase (MQP, (ii annealing phase (AP, and (iii dynamical equilibrium phase (DEP. MQP enforces several stages of quick quenching processes that include chaotic functions. The chaotic functions can increase the exploration potential of solutions space of PFP. AP phase implements a simulated annealing algorithm (SA with an exponential cooling function. MQP and AP are delimited by different ranges of temperatures; MQP is applied for a range of temperatures which goes from extremely high values to very high values; AP searches for solutions in a range of temperatures from high values to extremely low values. DEP phase finds the equilibrium in a dynamic way by applying least squares method. CMQA is tested with several instances of PFP.

  10. Rapid Thermal annealing of silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    Hasenack, C.M.

    1986-01-01

    The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 1200 0 C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author) [pt

  11. Sintering and annealing effects on undoped yttria transparent ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Letue, Laetitia; Petit, Johan, E-mail: johan.petit@onera.fr; Ritti, Marie-Hélène; Lalanne, Sylvie; Landais, Stéphane

    2017-06-15

    Transparent yttrium oxide (Y{sub 2}O{sub 3}) ceramics were processed by several densifications steps without any doping species. The green bodies were obtained by the aqueous way and sintered at high temperature under vacuum and then under high pressure. We studied the effects of different sintering cycles and air annealing at different steps of the process on the density and the grain growth. We also focused on the reaction between yttria ceramics and BN-coated graphite crucible which occurs during HIP. We noted that a low heating rate and two annealing steps are necessary to improve our samples’ transparency. - Highlights: • The quality of transparent ceramics is compared with the tested process parameters. • Air annealing is critical when using a carbon environment in the process. • Intra-granular pores, and so the final transparency, are directly linked to the sintering heating rates.

  12. Applications of transient annealing to solar cell processing

    Energy Technology Data Exchange (ETDEWEB)

    Bentini, G.G. (C.N.R. Istituto LAMEL, Bologna (Italy))

    1983-01-01

    The economical reasons supporting the introduction of transient annealing in solar cell manufacturing are briefly discussed. Such techniques may play an important role, as they are compatible with the request of high throughput, automated processing together with the high quality of the p-n junction which are necessary for large scale economical production of photovoltaic energy. A survey of the applications of the different transient annealing techniques to solar cell processing has been developed by comparing in detail the results obtained up to now the case of solid and liquid phase transient annealing, associated with dry techniques such as Ion Implantation or dopant deposition on the wafer surface. The possibility of using laser pulses for the formation of the p-n junction by incorporation of dopant atoms from a suitable gaseous environment, has also been examined.

  13. Formability of Annealed Ni-Ti Shape Memory Alloy Sheet

    Science.gov (United States)

    Fann, K. J.; Su, J. Y.; Chang, C. H.

    2018-03-01

    Ni-Ti shape memory alloy has two specific properties, superelasiticity and shape memory effect, and thus is widely applied in diverse industries. To extend its application, this study attempts to investigate the strength and cold formability of its sheet blank, which is annealed at various temperatures, by hardness test and by Erichsen-like cupping test. As a result, the higher the annealing temperature, the lower the hardness, the lower the maximum punch load as the sheet blank fractured, and the lower the Erichsen-like index or the lower the formability. In general, the Ni-Ti sheet after annealing has an Erichsen-like index between 8 mm and 9 mm. This study has also confirmed via DSC that the Ni-Ti shape memory alloy possesses the austenitic phase and shows the superelasticity at room temperature.

  14. NRC assessment of the Department of Energy annealing demonstration project

    International Nuclear Information System (INIS)

    Jackson, D.A.; Malik, S.N.

    1997-01-01

    Thermal annealing is the only known method for mitigating the effects of neutron irradiation embrittlement in reactor pressure vessel (RPV) steels. In May 1996, the US Department of Energy (DOE) in conjunction with the American Society of Mechanical Engineers, Westinghouse, Cooperheat, Electric Power Research Institute (with participating utilities), Westinghouse Owner's Group, Consumers Power, Electricite' de France, Duquesne Light and the Central Research Institute of the Electric Power Industry (Japan) sponsored an annealing demonstration project (ADP) at Marble Hill. The Marble Hill Plant, located in Madison, Indiana, is a Westinghouse 4 loop design. The plant was nearly 70% completed when the project was canceled. Hence, the RPV was never irradiated. The paper will present highlights from the NRCs independent evaluation of the Marble Hill Annealing Demonstration Project

  15. Hardening by annealing and softening by deformation in nanostructured metals

    DEFF Research Database (Denmark)

    Huang, X.; Hansen, N.; Tsuji, N.

    2006-01-01

    We observe that a nanostructured metal can be hardened by annealing and softened when subsequently deformed, which is in contrast to the typical behavior of a metal. Microstructural investigation points to an effect of the structural scale on fundamental mechanisms of dislocation-dislocation and ......We observe that a nanostructured metal can be hardened by annealing and softened when subsequently deformed, which is in contrast to the typical behavior of a metal. Microstructural investigation points to an effect of the structural scale on fundamental mechanisms of dislocation....... As a consequence, the strength decreases and the ductility increases. These observations suggest that for materials such as the nanostructured aluminum studied here, deformation should be used as an optimizing procedure instead of annealing....

  16. Selective molecular annealing: in situ small angle X-ray scattering study of microwave-assisted annealing of block copolymers.

    Science.gov (United States)

    Toolan, Daniel T W; Adlington, Kevin; Isakova, Anna; Kalamiotis, Alexis; Mokarian-Tabari, Parvaneh; Dimitrakis, Georgios; Dodds, Christopher; Arnold, Thomas; Terrill, Nick J; Bras, Wim; Hermida Merino, Daniel; Topham, Paul D; Irvine, Derek J; Howse, Jonathan R

    2017-08-09

    Microwave annealing has emerged as an alternative to traditional thermal annealing approaches for optimising block copolymer self-assembly. A novel sample environment enabling small angle X-ray scattering to be performed in situ during microwave annealing is demonstrated, which has enabled, for the first time, the direct study of the effects of microwave annealing upon the self-assembly behavior of a model, commercial triblock copolymer system [polystyrene-block-poly(ethylene-co-butylene)-block-polystyrene]. Results show that the block copolymer is a poor microwave absorber, resulting in no change in the block copolymer morphology upon application of microwave energy. The block copolymer species may only indirectly interact with the microwave energy when a small molecule microwave-interactive species [diethylene glycol dibenzoate (DEGDB)] is incorporated directly into the polymer matrix. Then significant morphological development is observed at DEGDB loadings ≥6 wt%. Through spatial localisation of the microwave-interactive species, we demonstrate targeted annealing of specific regions of a multi-component system, opening routes for the development of "smart" manufacturing methodologies.

  17. Increased electrical conductivity of peptides through annealing process

    Directory of Open Access Journals (Sweden)

    Seok Daniel Namgung

    2017-08-01

    Full Text Available Biocompatible biologically occurring polymer is suggested as a component of human implantable devices since conventional inorganic materials are apt to trigger inflammation and toxicity problem within human body. Peptides consisting of aromatic amino acid, tyrosine, are chosen, and enhancement on electrical conductivity is studied. Annealing process gives rise to the decrease on resistivity of the peptide films and the growth of the carrier concentration is a plausible reason for such a decrease on resistivity. The annealed peptides are further applied to an active layer of field effect transistor, in which low on/off current ratio (∼10 is obtained.

  18. Modernization of two gas-fired shaft annealing furnaces

    Energy Technology Data Exchange (ETDEWEB)

    Barthof, G.; Porst, G.; Raczek, S.

    1986-04-01

    The objective was to modernize two existing shaft-type annealing furnaces used for the heat treatment of grey iron castings with the aim of reducing the consumption of gaseous fuel, minimize the formation of scale, decrease maintenance expense and apply more automatic control to the annealing process. This was to be achieved by an optimum combination of new types of construction materials and advanced firing and control equipment. The author describes the furnace in its condition prior to and after reconstruction. The operating results obtained after reconstruction were found to justify the costs incurred. The payback period is roughly one year.

  19. Adiabatic quantum computation and quantum annealing theory and practice

    CERN Document Server

    McGeoch, Catherine C

    2014-01-01

    Adiabatic quantum computation (AQC) is an alternative to the better-known gate model of quantum computation. The two models are polynomially equivalent, but otherwise quite dissimilar: one property that distinguishes AQC from the gate model is its analog nature. Quantum annealing (QA) describes a type of heuristic search algorithm that can be implemented to run in the ``native instruction set'''' of an AQC platform. D-Wave Systems Inc. manufactures {quantum annealing processor chips} that exploit quantum properties to realize QA computations in hardware. The chips form the centerpiece of a nov

  20. Electron trap annealing in neutron transmutation doped silicon

    DEFF Research Database (Denmark)

    Guldberg, J.

    1977-01-01

    Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these anne......Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five...

  1. Hp Ge: Purification, crystal growth, and annealing properties

    International Nuclear Information System (INIS)

    Hall, R.N.

    1984-01-01

    The prospects for growing HP Ge crystals of increased size and purity are examined. One interesting approach is to grow dislocation-free crystals, which must then be annealed to reduce the concentration of V 2 H traps. The phenomena which occur during annealing are discussed and compared with experiment. Hydrogen, present in atomic form at the growth temperature, forms H 2 molecules during cooling, causing the effective diffusion coefficient to decrease rapidly. Models representing the reactions between H and the V 2 H, A(H, Si), and D(H,O) complexes are presented and analyzed

  2. Dependence of boron cluster dissolution on the annealing ambient

    International Nuclear Information System (INIS)

    Radic, Ljubo; Lilak, Aaron D.; Law, Mark E.

    2002-01-01

    Boron is introduced into silicon via implantation to form p-type layers. This process creates damage in the crystal that upon annealing causes enhanced diffusion and clustering of the boron layer. Reactivation of the boron is not a well-understood process. In this letter we experimentally investigate the effect of the annealing ambient on boron reactivation kinetics. An oxidizing ambient which injects silicon interstitials is compared to an inert ambient. Contrary to published theory, an excess of interstitials does not accelerate the reactivation process

  3. Effect of annealing on field emission properties of nanodiamond coating

    International Nuclear Information System (INIS)

    Zhai, C.X.; Yun, J.N.; Zhao, L.L.; Zhang, Z.Y.; Wang, X.W.; Chen, Y.Y.

    2011-01-01

    Field electron emission of detonation nanodiamond (ND) coated on a titanium substrate by electrophoretic deposition is investigated. It is found that thermal annealing can significantly improve the field emission properties of the ND layer, which can be mainly attributed to the formation of the TiC phase between diamond and Ti. The first-principles calculated results show that the formation of transition layers can lower the interface barrier and enhance the field electron emission of ND coating. Besides, the transformation of diamond to graphite after annealing has been revealed by Raman spectra. This transformation also benefits the electron emission enhancement.

  4. Simulated annealing algorithm for reactor in-core design optimizations

    International Nuclear Information System (INIS)

    Zhong Wenfa; Zhou Quan; Zhong Zhaopeng

    2001-01-01

    A nuclear reactor must be optimized for in core fuel management to make full use of the fuel, to reduce the operation cost and to flatten the power distribution reasonably. The author presents a simulated annealing algorithm. The optimized objective function and the punishment function were provided for optimizing the reactor physics design. The punishment function was used to practice the simulated annealing algorithm. The practical design of the NHR-200 was calculated. The results show that the K eff can be increased by 2.5% and the power distribution can be flattened

  5. The annealing of radiation damage in type Ia diamond

    International Nuclear Information System (INIS)

    Collins, Alan T; Kiflawi, Isaac

    2009-01-01

    The kinetics of the recovery of radiation damage in type Ia diamond has been investigated using isothermal annealing at 600 deg. C. In diamonds having a reasonably homogeneous distribution of nitrogen the decay of the vacancy concentration with time can be approximately described by a single exponential. Previous investigations have identified 'fast' and 'slow' components in the annealing, and we show that the existence of more than one time constant is associated with inhomogeneous nitrogen concentrations. The measurements show further that, in order to obtain the oscillator strengths of nitrogen-vacancy centres, studies must be restricted to diamonds with moderately high nitrogen concentrations.

  6. Effect of annealing on field emission properties of nanodiamond coating

    Energy Technology Data Exchange (ETDEWEB)

    Zhai, C.X., E-mail: zhaicatty@126.co [School of Information Science and Technology, Northwest University, Xi' an 710127, Shaanxi (China); Yun, J.N.; Zhao, L.L.; Zhang, Z.Y.; Wang, X.W.; Chen, Y.Y. [School of Information Science and Technology, Northwest University, Xi' an 710127, Shaanxi (China)

    2011-03-01

    Field electron emission of detonation nanodiamond (ND) coated on a titanium substrate by electrophoretic deposition is investigated. It is found that thermal annealing can significantly improve the field emission properties of the ND layer, which can be mainly attributed to the formation of the TiC phase between diamond and Ti. The first-principles calculated results show that the formation of transition layers can lower the interface barrier and enhance the field electron emission of ND coating. Besides, the transformation of diamond to graphite after annealing has been revealed by Raman spectra. This transformation also benefits the electron emission enhancement.

  7. Rapid hardening induced by electric pulse annealing in nanostructured pure aluminum

    DEFF Research Database (Denmark)

    Zeng, Wei; Shen, Yao; Zhang, Ning

    2012-01-01

    Nanostructured pure aluminum was fabricated by heavy cold-rolling and then subjected to recovery annealing either by applying electric pulse annealing or by traditional air furnace annealing. Both annealing treatments resulted in an increase in yield strength due to the occurrence of a “dislocation...... source-limited hardening” mechanism. However, the hardening kinetics was substantially faster for the electric pulse annealed material. Detailed microstructural characterization suggested that the rapid hardening during electric pulse annealing is related to an enhanced rate of recovery of dislocation...

  8. Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits—A comparative study

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A. J.

    2010-01-01

    and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing......Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver...... kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted...

  9. Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits-A comparative study

    International Nuclear Information System (INIS)

    Pantleon, Karen; Somers, Marcel A.J.

    2010-01-01

    Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted to be interpreted in terms of recovery, recrystallization and grain growth.

  10. Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Guang-Wen; Qi, Zhen-Yu, E-mail: qizhy@sysucc.org.cn; Deng, Xiao-Wu [Department of Radiation Oncology, Sun Yat-Sen University Cancer Center and State Key Laboratory of Oncology in Southern China, Collaborative Innovation Center of Cancer Medicine, Guangzhou 510060 (China); Rosenfeld, Anatoly [Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2522 (Australia)

    2014-05-15

    Purpose: To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters forin vivo intensity modulated radiation therapy (IMRT) dosimetry. Methods: Several MOSFETs were irradiated atd{sub max} using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. Results: More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Conclusions: Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic.

  11. Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry.

    Science.gov (United States)

    Luo, Guang-Wen; Qi, Zhen-Yu; Deng, Xiao-Wu; Rosenfeld, Anatoly

    2014-05-01

    To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters for in vivo intensity modulated radiation therapy (IMRT) dosimetry. Several MOSFETs were irradiated at d(max) using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic.

  12. Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry

    International Nuclear Information System (INIS)

    Luo, Guang-Wen; Qi, Zhen-Yu; Deng, Xiao-Wu; Rosenfeld, Anatoly

    2014-01-01

    Purpose: To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters forin vivo intensity modulated radiation therapy (IMRT) dosimetry. Methods: Several MOSFETs were irradiated atd max using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. Results: More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Conclusions: Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic

  13. Influence of degree of deformation in rolling on anneal hardening ...

    Indian Academy of Sciences (India)

    Unknown

    Influence of degree of deformation in rolling on anneal hardening effect of a cast copper alloy. SVETLANA NESTOROVIC*, DESIMIR MARKOVIC and LJUBICA IVANIC. Technical Faculty Bor, University of Belgrade, Belgrade, Yugoslavia. MS received 15 May 2003. Abstract. This paper reports results of investigations carried ...

  14. Self-Organization and Annealed Disorder in a Fracturing Process

    DEFF Research Database (Denmark)

    Caldarelli, Guido; Di Tolla, Francesco; Petri, Alberto

    1996-01-01

    We show that a vectorial model for inhomogeneous elastic media self-organizes under external stress. An onset of crack avalanches of every duration and length scale compatible with the lattice size is observed. The behavior is driven by the introduction of annealed disorder, i.e., by lowering...... condition for reproducing the algebraic distribution of the energy released during cracks formation....

  15. Isothermal annealing kinetics of X-irradiated pyrene by EPR

    International Nuclear Information System (INIS)

    Partiti, C.S.M.; Pontuschka, W.M.; Fazzio, A.; Piccini, A.

    1989-07-01

    The annealing behavior of X-irradiated stable free radicals found in Pyrene (C 16 H 10 ) single crystals was studied by EPR. Two processes of thermal decay kinetics were found, both with the same activation energy (1.9±0.1) ev. (author) [pt

  16. Coupled Qubits for Next Generation Quantum Annealing: Improving Coherence

    Science.gov (United States)

    Weber, Steven; Samach, Gabriel; Hover, David; Rosenberg, Danna; Yoder, Jonilyn; Kim, David K.; Kerman, Andrew; Oliver, William D.

    Quantum annealing is an optimization technique which potentially leverages quantum tunneling to enhance computational performance. Existing quantum annealers use superconducting flux qubits with short coherence times, limited primarily by the use of large persistent currents. Here, we examine an alternative approach, using flux qubits with smaller persistent currents and longer coherence times. We demonstrate tunable coupling, a basic building-block for quantum annealing, between two such qubits. Furthermore, we characterize qubit coherence as a function of coupler setting and investigate the effect of flux noise in the coupler loop on qubit coherence. Our results provide insight into the available design space for next-generation quantum annealers with improved coherence. This research was funded by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA) and by the Assistant Secretary of Defense for Research & Engineering under Air Force Contract No. FA8721-05-C-0002. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of ODNI, IARPA, or the US Government.

  17. Investigation of annealing-treatment on structural and optical ...

    Indian Academy of Sciences (India)

    Administrator

    ranges are studied by X-ray diffraction (XRD) and UV-visible spectroscopic ellipsometry (SE). XRD mea- ... We found that the refractive index and the extinction coefficient increase with increas- ing annealing .... of the occurrence of light absorption resulting from the ... From the spectral relationship between extinction co-.

  18. Air atmosphere annealing effects on LSO:Ce crystal

    Czech Academy of Sciences Publication Activity Database

    Ding, D.; Feng, H.; Ren, G.; Nikl, Martin; Qin, L.; Pan, S.; Yang, F.

    2010-01-01

    Roč. 57, č. 3 (2010), s. 1272-1277 ISSN 0018-9499 R&D Projects: GA MŠk ME08034 Institutional research plan: CEZ:AV0Z10100521 Keywords : annealing * cerium * LSO * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.519, year: 2010

  19. Dielectric properties of plasma sprayed silicates subjected to additional annealing

    Czech Academy of Sciences Publication Activity Database

    Ctibor, Pavel; Sedláček, J.; Nevrlá, Barbara; Neufuss, Karel

    2017-01-01

    Roč. 10, č. 2 (2017), s. 105-114 ISSN 2008-2134 Institutional support: RVO:61389021 Keywords : Annealing * Dielectric properties * Plasma spraying * Silicates * Electrical properties * Insulators Subject RIV: JK - Corrosion ; Surface Treatment of Materials OBOR OECD: Coating and films http://pccc.icrc.ac.ir/Articles/1/18/990/

  20. Effect of annealing process of iron powder on magnetic properties ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Iron powder magnetic cores are used as soft magnetic rotors, in micro special motors such as BS brake motors, refrigerator compressor motors and brushless servo motors. Heat treatment of iron powder played an important role in the magnetic properties and loss of the motor cores. After the annealing process,.

  1. Ion implantation and annealing studies in III-V nitrides

    International Nuclear Information System (INIS)

    Zolper, J.C.; Pearton, S.J.

    1996-01-01

    Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies in GaN. First, sputtered AlN is shown by electrical characterization of Schottky and Ohmic contacts to be an effect encapsulant of GaN during the 1,100 C implant activation anneal. The AlN suppresses N-loss from the GaN surface and the formation of a degenerate n + -surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, they examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. They show that for a Si-dose of 1 x 10 16 cm -2 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material

  2. Competitive annealing of multiple DNA origami: formation of chimeric origami

    International Nuclear Information System (INIS)

    Majikes, Jacob M; Nash, Jessica A; LaBean, Thomas H

    2016-01-01

    Scaffolded DNA origami are a robust tool for building discrete nanoscale objects at high yield. This strategy ensures, in the design process, that the desired nanostructure is the minimum free energy state for the designed set of DNA sequences. Despite aiming for the minimum free energy structure, the folding process which leads to that conformation is difficult to characterize, although it has been the subject of much research. In order to shed light on the molecular folding pathways, this study intentionally frustrates the folding process of these systems by simultaneously annealing the staple pools for multiple target or parent origami structures, forcing competition. A surprising result of these competitive, simultaneous anneals is the formation of chimeric DNA origami which inherit structural regions from both parent origami. By comparing the regions inherited from the parent origami, relative stability of substructures were compared. This allowed examination of the folding process with typical characterization techniques and materials. Anneal curves were then used as a means to rapidly generate a phase diagram of anticipated behavior as a function of staple excess and parent staple ratio. This initial study shows that competitive anneals provide an exciting way to create diverse new nanostructures and may be used to examine the relative stability of various structural motifs. (paper)

  3. Thermal annealing and ionic abrasion in ZnTe

    International Nuclear Information System (INIS)

    Bensahel, D.

    1975-01-01

    Thermal annealing of the ZnTe crystal is studied first in order to obtain information on the aspect of the penetration profile. Ionic abrasion is then investigated to find out whether it produces the same effects as ionic implantation, especially for luminescence [fr

  4. Embrittlement recovery due to annealing of reactor pressure vessel steels

    International Nuclear Information System (INIS)

    Eason, E.D.; Wright, J.E.; Nelson, E.E.; Odette, G.R.; Mader, E.V.

    1998-01-01

    The irradiation embrittlement of nuclear reactor pressure vessels (RPV) can be reduced by thermal annealing at temperatures higher than the normal operating conditions. The objective of this work was to analyze the pertinent data and develop quantitative models for estimating the recovery in 41 J (30 ft-lb) Charpy transition temperature (TT) and Charpy upper shelf energy (USE) due to annealing. An analysis data base was developed, reviewed for completeness and accuracy, and documented as part of this work. Models were developed based on a combination of statistical techniques, including pattern recognition and transformation analysis, and the current understanding of the mechanisms governing embrittlement and recovery. The quality of models fitted in this project was evaluated by considering both the Charpy annealing data used for fitting and a surrogate hardness data base. This work demonstrates that microhardness recovery is a good surrogate for shift recovery and that there is a high level of consistency between the observed annealing trends and fundamental models of embrittlement and recovery processes. (orig.)

  5. Infrared absorption studies of the annealing of irradiated diamonds

    International Nuclear Information System (INIS)

    Woods, G.S.

    1984-01-01

    Natural (types Ia and IIa) and synthetic (type Ib) diamonds have been irradiated with energetic electrons and neutrons and then heated at temperatures up to 1400 deg C. Attendant changes in the infrared absorption spectra, especially above the Raman frequency (1332 cm -1 ), have been monitored. The most prominent absorption to develop in the infrared region proper, on annealing both type Ia and type Ib specimens, whether electron- or neutron-irradiated is the H1a line at 1450 cm -1 . Measurements taken of neutron-irradiated type Ia specimens show that the strength of this line is specimen-dependent, and that it is a linear function of radiation dose. Isochronal annealing studies show that the onset of the line occurs during heating at 250 deg C for type Ia specimens and at 650 deg C for type Ib specimens. The absorption begins to weaken during heating at 1100 deg C, but it is very persistent, surviving an anneal of 4 hours at 1400 deg C, albeit with diminished intensity. Three other weaker lines at 1438, 1358 and 1355 cm -1 develop with the 1450 cm -1 line, but differ from it and from each other in subsequent annealing behaviour. Other lines were observed; these are reported and discussed. (author)

  6. Meta-Modeling by Symbolic Regression and Pareto Simulated Annealing

    NARCIS (Netherlands)

    Stinstra, E.; Rennen, G.; Teeuwen, G.J.A.

    2006-01-01

    The subject of this paper is a new approach to Symbolic Regression.Other publications on Symbolic Regression use Genetic Programming.This paper describes an alternative method based on Pareto Simulated Annealing.Our method is based on linear regression for the estimation of constants.Interval

  7. Correction of measured multiplicity distributions by the simulated annealing method

    International Nuclear Information System (INIS)

    Hafidouni, M.

    1993-01-01

    Simulated annealing is a method used to solve combinatorial optimization problems. It is used here for the correction of the observed multiplicity distribution from S-Pb collisions at 200 GeV/c per nucleon. (author) 11 refs., 2 figs

  8. The effects of Mg incorporation and annealing temperature on the ...

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 88; Issue 2. The effects of Mg incorporation and annealing temperature on the physicochemical properties and antibacterial activity against {\\it Listeria monocytogenes} of ZnO nanoparticles. NIMA SHADAN ALI ABDOLAHZADEH ZIABARI RAFIEH MERAAT KAMYAR ...

  9. Effects of nitrogen annealing on surface structure, silicide formation ...

    Indian Academy of Sciences (India)

    Effects of nitrogen annealing on structural and magnetic properties of Co/Si (100) up to 700◦C has been studied in this ... are dictated by uniformity of interdiffusion parallel to inter- ..... AFM images confirmed increase in the nanocrystalline.

  10. The afforestation problem: a heuristic method based on simulated annealing

    DEFF Research Database (Denmark)

    Vidal, Rene Victor Valqui

    1992-01-01

    This paper presents the afforestation problem, that is the location and design of new forest compartments to be planted in a given area. This optimization problem is solved by a two-step heuristic method based on simulated annealing. Tests and experiences with this method are also presented....

  11. Valence control of cobalt oxide thin films by annealing atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Wang Shijing [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhang Boping, E-mail: bpzhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China)

    2011-02-01

    The cobalt oxide (CoO and Co{sub 3}O{sub 4}) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH{sub 3}OCH{sub 2}CH{sub 2}OH and Co(NO{sub 3}){sub 2}.6H{sub 2}O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co{sub 3}O{sub 4} thin film was obtained by annealing in air at 300-600, and N{sub 2} at 300, and transferred to CoO thin film by raising annealing temperature in N{sub 2}. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  12. TEM studies of P+ implanted and subsequently laser annealed Si

    International Nuclear Information System (INIS)

    Sadana, D.K.; Wilson, M.C.; Booker, G.R.; Washburn, J.

    1979-05-01

    The present investigation is concerned with laser annealing of P + implanted Si. The aim of the work was to study the crystallization behavior of damage structure occurring due to high dose rate implantation using transmission electron microscopy (TEM) as the method of examination

  13. Burst annealing of electron damage in silicon solar cells

    International Nuclear Information System (INIS)

    Day, A.C.; Horne, W.E.; Thompson, M.A.; Lancaster, C.A.

    1985-01-01

    A study has been performed of burst annealing of electron damage in silicon solar cells. Three groups of cells consisting of 3 and 0.3 ohm-cm silicon were exposed to fluences of 2 x 10 to the 14th power, 4 x 10 to the 14th power, and 8 x 10 to the 14th power 1-MeV electrons/sq cm, respectively. They were subsequently subjected to 1-minute bursts of annealing at 500 C. The 3 ohm-cm cells showed complete recovery from each fluence level. The 0.3 ohm-cm cells showed complete recovery from the 2 x 10 to the 14th power e/sq cm fluence; however, some of the 0.3 ohm-cm cells did not recover completely from the higher influences. From an analysis of the results it is concluded that burst annealing of moderate to high resistivity silicon cell arrays in space is feasible and that with more complete understanding, even the potentially higher efficiency low resistivity cells may be usable in annealable arrays in space

  14. Annealing of the RPV of unit 1 in Loviisa 1996

    International Nuclear Information System (INIS)

    Ahlstrand, R.; Kohopaeae, J.

    1997-01-01

    The critical circumferential core area weld of Loviisa 1 reactor pressure vessel was successfully annealed during the refueling and maintenance outage in August 1996. The weld was heated up to the annealing temperature of 475 deg.C and this temperature was maintained for 100 hours. The work was implemented by Skoda Nuclear Machinery Ltd as a main supplier representing consortium of Skoda Nuclear machinery Ltd from Czech Republic and Bohunice Nuclear Power Plant from Slovak Republic. Comprehensive material testing programs have been carried out to ensure the licensing of the annealing. Part of these programs have not yet been finished and are still going on. In the domestic programs sophisticated testing techniques including electric discharge machining and reconstitution techniques were used. Thus already tested surveillance specimens halves could be used as authentic material. The licensing work has been carried out mainly by VTT in Finland and Moht Otjig RM in Russia. A new comprehensive surveillance program has started to follow the embrittlement of the RPV after annealing. (author)

  15. A Deterministic Annealing Approach to Clustering AIRS Data

    Science.gov (United States)

    Guillaume, Alexandre; Braverman, Amy; Ruzmaikin, Alexander

    2012-01-01

    We will examine the validity of means and standard deviations as a basis for climate data products. We will explore the conditions under which these two simple statistics are inadequate summaries of the underlying empirical probability distributions by contrasting them with a nonparametric, method called Deterministic Annealing technique

  16. The phase diagram of annealed Ge(111)/Ga

    DEFF Research Database (Denmark)

    Molinàs-Mata, P.; Böhringer, M.; Artacho, E.

    1995-01-01

    A study of the annealed phases of Ge(111)/Ga for coverages above 0.05 ML is presented. The surfaces are investigated by low-energy electron diffraction, scanning tunneling microscopy, and partly by photoemission and surface X-ray diffraction using synchrotron radiation. For Ga coverages beyond 0....

  17. Cesium lead iodide solar cells controlled by annealing temperature.

    Science.gov (United States)

    Kim, Yu Geun; Kim, Tae-Yoon; Oh, Jeong Hyeon; Choi, Kyoung Soon; Kim, Youn-Jea; Kim, Soo Young

    2017-02-22

    An inorganic lead halide perovskite film, CsPbI 3 , used as an absorber in perovskite solar cells (PSCs) was optimized by controlling the annealing temperature and the layer thickness. The CsPbI 3 layer was synthesized by one-step coating of CsI mixed with PbI 2 and a HI additive in N,N-dimethylformamide. The annealing temperature of the CsPbI 3 film was varied from 80 to 120 °C for different durations and the thickness was controlled by changing the spin-coating rpm. After annealing the CsPbI 3 layer at 100 °C under dark conditions for 10 min, a black phase of CsPbI 3 was formed and the band gap was 1.69 eV. Most of the yellow spots disappeared, the surface coverage was almost 100%, and the rms roughness was minimized to 3.03 nm after annealing at 100 °C. The power conversion efficiency (PCE) of the CsPbI 3 based PSC annealed at 100 °C was 4.88%. This high PCE value is attributed to the low yellow phase ratio, high surface coverage, low rms roughness, lower charge transport resistance, and lower charge accumulation. The loss ratio of the PCE of the CH 3 NH 3 PbI x Cl 3-x and CsPbI 3 based PSCs after keeping in air was 47 and 26%, respectively, indicating that the stability of the CsPbI 3 based PSC is better than that of the CH 3 NH 3 PbI x Cl 3-x based PSC. From these results, it is evident that CsPbI 3 is a potential candidate for solar cell applications.

  18. Thermoluminescence of annealed and shock-loaded feldspar

    International Nuclear Information System (INIS)

    Hartmetz, C.P.

    1988-01-01

    Samples of oligoclase and bytownite were shock-loaded to a variety of pressures, and annealed for a variety of temperatures and times. The effect of Mrad doses of gamma-rays on oligoclase TL were also studied. After these treatments, thermoluminescence (TL) and X-ray diffraction (XRD) measurements were made to: (1) determine the effects of shock on terrestrial feldspar and compare with variations in the TL emission of ordinary chondrites (OCs); (2) determine if disordering in feldspar was responsible for any related changes in TL properties of OCs; (3) determine if the combined effect of shock plus annealing causes the changes in TL properties; (4) see if radiation damage from cosmic ray exposure plays a role in the TL variations; (5) examine the implications of this work to the thermal and shock histories of OCs. The lightly shock-loaded and annealed oligoclase samples have a dominant peak temperature of 120-140 C, identical to type 3.3-3.5 OCs. The heavily shocked samples dominant peak is at 230C, similar to type > 3.5 OCs . While the heavily annealed/disordered oligoclase samples have a peak at 280C, this peak is rarely observed in OCs. Radiation damage from Mrad doses of gamma-rays produced no change in peak temperature, but facilitated the shift to higher peak temperatures. The TL sensitivity of the shocked samples decreased by a factor of 25. Samples annealed at low temperatures (438-533C) showed a factor of 2 decrease in TL, but at the highest temperatures, the TL was a factor of 8 higher

  19. Isothermal annealing of silicon implanted with 50 keV 10B ions

    International Nuclear Information System (INIS)

    Weidner, B.; Zaschke, G.

    1974-01-01

    Isothermal annealing characteristics of silicon implanted with boron were measured and compared with calculated results. Implantation was performed with 50 keV 10 B ions in the dose range of 7.5 x 10 12 cm -2 to 2.0 x 10 15 cm -2 . Annealing temperatures ranged from 700 to 900 0 C. Maximum annealing time was 10 4 minutes. Annealing time strongly increases with increasing dose and decreasing temperature. Assuming that there is only one activation energy the isothermal annealing curves of constant dose and different temperatures were combined to a reduced annealing curve and the reduced isothermal annealing curve calculated. Starting from first order kinetics, considering the doping profile of boron in silicon and assuming a depth-dependent decay constant the experimentally determined annealing curves could be easily described over the total dose and time range

  20. Effects of annealing on tensile property and corrosion behavior of Ti-Al-Zr alloy

    International Nuclear Information System (INIS)

    Kim, Tae-Kyu; Choi, Byung-Seon; Jeong, Yong-Hwan; Lee, Doo-Jeong; Chang, Moon-Hee

    2002-01-01

    The effects of annealing on the tensile property and corrosion behavior of Ti-Al-Zr alloy were evaluated. The annealing in the temperature range from 500 to 800 deg. C for 1 h induced the growth of the grain and the precipitate sizes. The results of tensile tests at room temperature showed that the strengths and the ductility were almost independent of the annealing temperature. However, the results of corrosion test in an ammonia aqueous solution of pH 9.98 at 360 deg. C showed that the corrosion resistance depended on the annealing temperature, and the corrosion rate was accelerated with increasing annealing temperature. Hydrogen contents absorbed during the corrosion test of 220 days also increased with the annealing temperature. It could be attributed to the growth of Fe-rich precipitates by annealing. It is thus suggested that the lower annealing temperatures provide the better corrosion properties without degrading the tensile properties

  1. Determination of the annealing for AISI430 steel in a continous furnace

    International Nuclear Information System (INIS)

    Pinto, A.H.; Diab Junior, A.

    1984-01-01

    It's discussed a mathematical model, which represents the heating of a steel piece inside a continuous annealing furnace. It's described the experimental technique used to obtain good annealing conditions for a required quality. (Author) [pt

  2. Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Shaneyfelt, M.R.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

    1998-02-01

    Capacitance-voltage and thermally-stimulated-current techniques are used to estimate trapped hole and electron densities in MOS oxides as functions of irradiation and isochronal anneal temperature. Trapped-charge annealing and compensation effects are discussed

  3. Evaluation of the Process of Solvent Vapor Annealing on Organic Thin Films

    KAUST Repository

    Ren, Yi

    2011-01-01

    Solvent vapor annealing has recently emerged as an intriguing, room-temperature, and highly versatile alternative to thermal annealing. The chemically selective interaction between solvents and organic semiconductors opens new opportunities

  4. Tunable metal-insulator transitions in bilayer graphene by thermal annealing

    OpenAIRE

    Kalon, Gopinadhan; Shin, Young Jun; Yang, Hyunsoo

    2012-01-01

    Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic pr...

  5. Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

    Institute of Scientific and Technical Information of China (English)

    Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

    2009-01-01

    Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

  6. MoO3 Thickness, Thermal Annealing and Solvent Annealing Effects on Inverted and Direct Polymer Photovoltaic Solar Cells

    Directory of Open Access Journals (Sweden)

    Guillaume Wantz

    2012-11-01

    Full Text Available Several parameters of the fabrication process of inverted polymer bulk heterojunction solar cells based on titanium oxide as an electron selective layer and molybdenum oxide as a hole selective layer were tested in order to achieve efficient organic photovoltaic solar cells. Thermal annealing treatment is a common process to achieve optimum morphology, but it proved to be damageable for the performance of this kind of inverted solar cells. We demonstrate using Auger analysis combined with argon etching that diffusion of species occurs from the MoO3/Ag top layers into the active layer upon thermal annealing. In order to achieve efficient devices, the morphology of the bulk heterojunction was then manipulated using the solvent annealing technique as an alternative to thermal annealing. The influence of the MoO3 thickness was studied on inverted, as well as direct, structure. It appeared that only 1 nm-thick MoO3 is enough to exhibit highly efficient devices (PCE = 3.8% and that increasing the thickness up to 15 nm does not change the device performance. 

  7. Effect of the annealing temperature for the hydrogen Q-degradation on superconducting cavities

    International Nuclear Information System (INIS)

    Ota, Tomoko; Sukenobu, Satoru; Tanabe, Yoshio; Onishi, Yoshimichi; Noguchi, Shuichi; Ono, Masaaki; Saito, Kenji; Shishido, Toshio; Yamazaki, Yoshishige

    1997-01-01

    Hydrogen Q-degradation was studied in niobium superconducting cavities prepared by barrel polishing, and electropolishing without annealing, though a fast cooling down of cavities. Cavity performance with various annealing temperature were tested using a 1.3GHz single-cell cavity to compare the effects of annealing temperature for hydrogen Q-degradation. (author)

  8. Nitrogen aggregation in Ib type synthetic diamonds at low pressure and high-temperature annealing

    International Nuclear Information System (INIS)

    Kazyuchits, N.M.; Rusetskij, M.S.; Latushko, Ya.I.; Kazyuchits, V.N.; Zajtsev, A.M.

    2015-01-01

    A new technique for annealing of diamonds at low pressure and high temperature (LPHT) is considered. The absorption spectra of synthetic Ib diamonds are given before and after annealing. This is evident from a comparison of the spectra that nitrogen aggregation process takes place at the LPHT annealing diamond. (authors)

  9. Superheated steam annealing of pressurized water reactor vessel

    International Nuclear Information System (INIS)

    Porowski, J.S.

    1993-01-01

    Thermal annealing of an embrittled Reactor Pressure Shell is the only recognized means for recovering material properties lost due to long-term exposure of the reactor walls to radiation. Reduced toughness of the material during operation is a major concern in evaluations of structural integrity of older reactors. Extensive studies performed within programs related to life extension of nuclear plants have confirmed that the thermal treatment of 850 deg. F for 168 hours on irradiated material essentially recovers material properties lost due to neutron exposure. Dry and wet annealing methods have been considered. Wet annealing involves operating the reactor at near design temperatures and pressures. Since the temperature of wet annealing must be limited to vessel design temperature of 650 deg. F, only partial recovery of the lost properties is achieved. Thus dry annealing was selected as an alternative for future development and industrial implementation to extend the safe life of reactors. Dry thermal annealing consists of heating portions of the reactor vessel at a specific temperature for a given period of time using a high temperature heat source. The use of spent fuel assemblies, induction heating and resistance heating elements as well as the circulation of heated fluid were investigated as potential candidate methods. To date the use of resistance heating elements which are lowered into a dry empty reactor was considered to be the preferred method. In-depth research in the United States and practical applications of such a method in Russia have confirmed feasibility of the method. The method of using circulating superheated steam to anneal the vessel at 850 deg. F without complete removal of the reactor internals is described herein. After removing the reactor head and fuel, the core barrel along with the upper and lower core in PWRs is lifted to open an annular space between the reactor shell flange and the core barrel flange. The thermal shield can remain

  10. First application of quantum annealing to IMRT beamlet intensity optimization

    International Nuclear Information System (INIS)

    Nazareth, Daryl P; Spaans, Jason D

    2015-01-01

    Optimization methods are critical to radiation therapy. A new technology, quantum annealing (QA), employs novel hardware and software techniques to address various discrete optimization problems in many fields. We report on the first application of quantum annealing to the process of beamlet intensity optimization for IMRT.We apply recently-developed hardware which natively exploits quantum mechanical effects for improved optimization. The new algorithm, called QA, is most similar to simulated annealing, but relies on natural processes to directly minimize a system’s free energy. A simple quantum system is slowly evolved into a classical system representing the objective function. If the evolution is sufficiently slow, there are probabilistic guarantees that a global minimum will be located.To apply QA to IMRT-type optimization, two prostate cases were considered. A reduced number of beamlets were employed, due to the current QA hardware limitations. The beamlet dose matrices were computed using CERR and an objective function was defined based on typical clinical constraints, including dose-volume objectives, which result in a complex non-convex search space. The objective function was discretized and the QA method was compared to two standard optimization methods, simulated annealing and Tabu search, run on a conventional computing cluster.Based on several runs, the average final objective function value achieved by the QA was 16.9 for the first patient, compared with 10.0 for Tabu and 6.7 for the simulated annealing (SA) method. For the second patient, the values were 70.7 for the QA, 120.0 for Tabu and 22.9 for the SA. The QA algorithm required 27–38% of the time required by the other two methods.In this first application of hardware-enabled QA to IMRT optimization, its performance is comparable to Tabu search, but less effective than the SA in terms of final objective function values. However, its speed was 3–4 times faster than the other two methods

  11. Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

    Science.gov (United States)

    Esakky, Papanasam; Kailath, Binsu J.

    2017-08-01

    HfO2 as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO2/SiC capacitors offer higher sensitivity than SiO2/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO2/SiC interface. Effect of post deposition annealing in N2O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO2/SiC MIS capacitors are reported in this work. N2O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N2 result in formation of Hf silicate at the HfO2/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N2O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO2/SiC capacitors.

  12. The effect of humidity on annealing of polymer optical fibre bragg gratings

    DEFF Research Database (Denmark)

    Woyessa, Getinet; Nielsen, Kristian; Bang, Ole

    2015-01-01

    The effect of humidity on annealing of PMMA based microstructured polymer optical fiber (mPOF) Bragg gratings is studied. Polymer optical fibers (POFs) are annealed in order to release stress formed during the fabrication process. Un-annealed fibers will have high hysteresis and low sensitivity...... to humidity, particularly when operated at high temperature. Typically annealing of PMMA POFs is done at 80oC in an oven with no humidity control and therefor at low humidity. The response to humidity of PMMA FBGs annealed at different levels of humidity at the same temperature has also been studied. PMMA...

  13. Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.

    Science.gov (United States)

    Chen, Hong-Chih; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Guan-Fu; Chen, Bo-Wei; Hung, Yu-Ju; Chang, Kuo-Jui; Cheng, Kai-Chung; Huang, Chen-Shuo; Chen, Kuo-Kuang; Lu, Hsueh-Hsing; Lin, Yu-Hsin

    2018-02-26

    This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

  14. Effects of thermal annealing temperature and duration on hydrothermally grown ZnO nanorod arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Shin, C.M.; Heo, J.H.; Leem, J.Y. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of)], E-mail: hhryu@inje.ac.kr; Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Shin, B.C.; Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1, Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-03-15

    In this study, the effects of thermal annealing temperature and duration on ZnO nanorod arrays fabricated by hydrothermal method were investigated. The annealed ZnO/Si(1 1 1) substrate was used for ZnO nanorod array growth. The effects of annealing treatment on the structural and optical properties were investigated by scanning electron microscopy, X-ray diffraction, and room-temperature photoluminescence measurements. With the annealing temperature of 750 {sup o}C and the annealing duration of 10 min, both the structural and optical properties of the ZnO nanorod arrays improved significantly, as indicated in the X-ray diffraction and photoluminescence measurement.

  15. Defect evolution and dopant activation in laser annealed Si and Ge

    DEFF Research Database (Denmark)

    Cristiano, F.; Shayesteh, M.; Duffy, R.

    2016-01-01

    Defect evolution and dopant activation are intimately related to the use of ion implantation and annealing, traditionally used to dope semiconductors during device fabrication. Ultra-fast laser thermal annealing (LTA) is one of the most promising solutions for the achievement of abrupt and highly...... doped junctions. In this paper, we report some recent investigations focused on this annealing method, with particular emphasis on the investigation of the formation and evolution of implant/anneal induced defects and their impact on dopant activation. In the case of laser annealed Silicon, we show...

  16. Radiation annealing of gallium arsenide implanted with sulphur

    CERN Document Server

    Ardyshev, V M

    2002-01-01

    Sulfur ions were implanted in a semi-insulating GaAs. Photon annealing (805 deg C/(10-12) s) and the thermal one (800 deg C/30 min) were conducted under SiO sub 2 -films coating obtained by different ways. Contents of GaAs components in films were determined from Rutherford backscattering spectra; concentration profiles of electrons were measured by the voltage-capacitance method. Diffusion of sulfur was shown to go in two directions - to the surface and into bulk of GaAs. The first process was induced by vacancies that had been formed near the surface of semiconductors during the dielectric coating. The coefficient of the bulk-diffusion and diffusion-to-surface of sulfur ions under photon annealing was twice as much as that under thermal one. The doping efficiency was also larger

  17. Luminescence sensitivity changes in quartz as a result of annealing

    DEFF Research Database (Denmark)

    Bøtter-Jensen, L.; Agersnap Larsen, N.; Mejdahl, V.

    1995-01-01

    archaeological samples show very different OSL sensitivities. In this paper we report on studies of the effect of high temperature annealing on the OSL and phototransferred TL (PTTL) signals from sedimentary and synthetic quartz. A dramatic enhancement of both OSL and PTTL sensitivity was found especially...... in the temperature range 500-800 degrees C. Computer simulations of the possible effects are shown to produce data that agree in all essential details with the experimental observations. It is further demonstrated that the enhanced OSL sensitivity as a function of annealing temperature is not a pre-dose effect....... of magnitude less per unit radiation than that for heated material. The reason these temperature-induced sensitivity changes occur in quartz is presently not well understood. This phenomenon is also seen in the related area of luminescence dating in which sedimentary quartz and quartz from heated...

  18. On the annealing of the EPR dislocation signal in silicon

    International Nuclear Information System (INIS)

    Zolotukhin, M.N.; Kveder, V.V.; Osip'yan, Yu.A.

    1981-01-01

    The annealing kinetics of the (EPR) dislocation signal (D-centers) in silicon is studied. The disappearance of the dislocation EPR signal as a result of annealing is ascribed to rearrangement of the nuclei of the partial dislocations accompanied by pairwise ''closing'' of the broken bonds in the S=0 state. The height of the energy barrier for the rearrangement process is approximately 2 eV. A residual ''nonannealing'' EPR signal is observed in strongly deformed silicon crystals. It resembles an isotropic line with a width approximately 7.5 Oe and a g-factor approximately 2.006. It is suggested that the respective EPR centers (O-centers) are similar to the EPR centers in amorphic silicon [ru

  19. Annealing free, clean graphene transfer using alternative polymer scaffolds.

    Science.gov (United States)

    Wood, Joshua D; Doidge, Gregory P; Carrion, Enrique A; Koepke, Justin C; Kaitz, Joshua A; Datye, Isha; Behnam, Ashkan; Hewaparakrama, Jayan; Aruin, Basil; Chen, Yaofeng; Dong, Hefei; Haasch, Richard T; Lyding, Joseph W; Pop, Eric

    2015-02-06

    We examine the transfer of graphene grown by chemical vapor deposition (CVD) with polymer scaffolds of poly(methyl methacrylate) (PMMA), poly(lactic acid) (PLA), poly(phthalaldehyde) (PPA), and poly(bisphenol A carbonate) (PC). We find that optimally reactive PC scaffolds provide the cleanest graphene transfers without any annealing, after extensive comparison with optical microscopy, x-ray photoelectron spectroscopy, atomic force microscopy, and scanning tunneling microscopy. Comparatively, films transferred with PLA, PPA, PMMA/PC, and PMMA have a two-fold higher roughness and a five-fold higher chemical doping. Using PC scaffolds, we demonstrate the clean transfer of CVD multilayer graphene, fluorinated graphene, and hexagonal boron nitride. Our annealing free, PC transfers enable the use of atomically-clean nanomaterials in biomolecule encapsulation and flexible electronic applications.

  20. Ranking important nodes in complex networks by simulated annealing

    International Nuclear Information System (INIS)

    Sun Yu; Yao Pei-Yang; Shen Jian; Zhong Yun; Wan Lu-Jun

    2017-01-01

    In this paper, based on simulated annealing a new method to rank important nodes in complex networks is presented. First, the concept of an importance sequence (IS) to describe the relative importance of nodes in complex networks is defined. Then, a measure used to evaluate the reasonability of an IS is designed. By comparing an IS and the measure of its reasonability to a state of complex networks and the energy of the state, respectively, the method finds the ground state of complex networks by simulated annealing. In other words, the method can construct a most reasonable IS. The results of experiments on real and artificial networks show that this ranking method not only is effective but also can be applied to different kinds of complex networks. (paper)

  1. Luminescence characteristics of nanoporous anodic alumina annealed at different temperatures

    Science.gov (United States)

    Ilin, D. O.; Vokhmintsev, A. S.; Weinstein, I. A.

    2016-09-01

    Anodic aluminum oxide (AAO) membranes with 100 µm thickness were synthesized in oxalic acid solution under constant current density. Grown samples were annealed in 500-1250 °C range for 5 h in air. Average pore diameter was evaluated using quantitative analysis of SEM images and appeared to be within 78-86 nm diapason. It was found there was a broad emission band in the 350-620 nm region of photoluminescence (PL) spectra in amorphous membranes which is attributed to F-type oxygen deficient centers or oxalic ions. It was shown that intensive red emission caused by Cr3+ (696 nm) and Mn4+ (680 nm) impurities dominates in PL of AAO samples with crystalline α- and δ-phases after annealing at 1100-1250 °C temperatures.

  2. Influence of phosphate esters on the annealing properties of starch

    DEFF Research Database (Denmark)

    Wischmann, Bente; Muhrbeck, Per

    1998-01-01

    The effects of annealing on native potato, waxy maize, and phosphorylated waxy maize starches were compared. Phosphorylated waxy maize starch responded to annealing in a manner between that of the naturally phosphorylated potato starch and that of the native waxy maize starch. The gelatinisation...... end-point temperature was increased, whereas in the native waxy maize it was decreased. On the other hand, the onset temperature change was much larger in potato starch than in the two waxy maize starches. Steeping also yielded intermediate effects on the phosphorylated waxy maize starch....... It was concluded that the phosphate groups have similar effects as they do in the native, naturally phosphorylated potato starch, although the substitution pattern is not entirely the same in the artificially phosphorylated starch....

  3. Parallel simulated annealing algorithms for cell placement on hypercube multiprocessors

    Science.gov (United States)

    Banerjee, Prithviraj; Jones, Mark Howard; Sargent, Jeff S.

    1990-01-01

    Two parallel algorithms for standard cell placement using simulated annealing are developed to run on distributed-memory message-passing hypercube multiprocessors. The cells can be mapped in a two-dimensional area of a chip onto processors in an n-dimensional hypercube in two ways, such that both small and large cell exchange and displacement moves can be applied. The computation of the cost function in parallel among all the processors in the hypercube is described, along with a distributed data structure that needs to be stored in the hypercube to support the parallel cost evaluation. A novel tree broadcasting strategy is used extensively for updating cell locations in the parallel environment. A dynamic parallel annealing schedule estimates the errors due to interacting parallel moves and adapts the rate of synchronization automatically. Two novel approaches in controlling error in parallel algorithms are described: heuristic cell coloring and adaptive sequence control.

  4. Annealing cycles and the self-organization of functionalized colloids

    Science.gov (United States)

    Dias, Cristóvão S.; Araújo, Nuno A. M.; Telo da Gama, Margarida M.

    2018-01-01

    The self-assembly of functionalized (patchy) particles with directional interactions into target structures is still a challenge, despite the significant experimental advances in their synthesis. Self-assembly pathways are typically characterized by high energy barriers that hinder access to stable (equilibrium) structures. A possible strategy to tackle this challenge is to perform annealing cycles. By periodically switching on and off the inter-particle bonds, one expects to smooth-out the kinetic pathways and favor the assembly of targeted structures. Preliminary results have shown that the efficiency of annealing cycles depends strongly on their frequency. Here, we study numerically how this frequency-dependence scales with the strength of the directional interactions (size of the patch σ). We use analytical arguments to show that the scaling results from the statistics of a random walk in configurational space.

  5. Selection of views to materialize using simulated annealing algorithms

    Science.gov (United States)

    Zhou, Lijuan; Liu, Chi; Wang, Hongfeng; Liu, Daixin

    2002-03-01

    A data warehouse contains lots of materialized views over the data provided by the distributed heterogeneous databases for the purpose of efficiently implementing decision-support or OLAP queries. It is important to select the right view to materialize that answer a given set of queries. The goal is the minimization of the combination of the query evaluation and view maintenance costs. In this paper, we have addressed and designed algorithms for selecting a set of views to be materialized so that the sum of processing a set of queries and maintaining the materialized views is minimized. We develop an approach using simulated annealing algorithms to solve it. First, we explore simulated annealing algorithms to optimize the selection of materialized views. Then we use experiments to demonstrate our approach. The results show that our algorithm works better. We implemented our algorithms and a performance study of the algorithms shows that the proposed algorithm gives an optimal solution.

  6. Annealing free, clean graphene transfer using alternative polymer scaffolds

    International Nuclear Information System (INIS)

    Wood, Joshua D; Doidge, Gregory P; Carrion, Enrique A; Koepke, Justin C; Datye, Isha; Behnam, Ashkan; Hewaparakrama, Jayan; Aruin, Basil; Chen, Yaofeng; Lyding, Joseph W; Kaitz, Joshua A; Dong, Hefei; Haasch, Richard T; Pop, Eric

    2015-01-01

    We examine the transfer of graphene grown by chemical vapor deposition (CVD) with polymer scaffolds of poly(methyl methacrylate) (PMMA), poly(lactic acid) (PLA), poly(phthalaldehyde) (PPA), and poly(bisphenol A carbonate) (PC). We find that optimally reactive PC scaffolds provide the cleanest graphene transfers without any annealing, after extensive comparison with optical microscopy, x-ray photoelectron spectroscopy, atomic force microscopy, and scanning tunneling microscopy. Comparatively, films transferred with PLA, PPA, PMMA/PC, and PMMA have a two-fold higher roughness and a five-fold higher chemical doping. Using PC scaffolds, we demonstrate the clean transfer of CVD multilayer graphene, fluorinated graphene, and hexagonal boron nitride. Our annealing free, PC transfers enable the use of atomically-clean nanomaterials in biomolecule encapsulation and flexible electronic applications. (paper)

  7. Flash lamp annealing of ion implanted boron profiles

    International Nuclear Information System (INIS)

    Wieser, E.; Syhre, H.; Ruedenauer, F.G.; Steiger, W.

    1983-05-01

    The diffusion behaviour of ion implanted boron profiles (5x10E15 B/cm 2 , 50keV) in silicon at 800 0 C and 900 0 C has been compared for samples with and without foregoing flahs - lamp annealing of the radiation damage. The observed differences are discussed with respect to mechanisms of diffusion inhibition in the high concentration region. (Author) [de

  8. Effect of oxidation and annealing temperature on optical and ...

    Indian Academy of Sciences (India)

    Administrator

    Tin oxide thin films were deposited on glass substrate with 100 nm thickness of Sn, which was coated by magnetron sputtering followed by thermal oxidation at different temperatures. ... Annealing of the samples at 500–650 °C caused the transmittance and optical ..... (αhν)1/2 and (αhν)1/3 to determine the Eg. (b) They used.

  9. Capless Annealing of Ion Implanted GaA.

    Science.gov (United States)

    1980-12-01

    powder is used in PAT.processes. The purity of the graphite powder is thus a critical factor in PAT annealing. Comparison of doping profiles in Se and S...9... . D Rockwell Interntonal ERC41013.3FR SCO0.10178 SEMICONDUCTOR DOPING PROFILE 375 KeV So 3.5 x 101 2/cm 2 1017 \\850C 30 main! A120 3 BACK CAPm

  10. Annealing behavior and selected applications of ion-implanted alloys

    International Nuclear Information System (INIS)

    Myers, S.M.

    Thermally activated processes cause ion-implanted metals to evolve from the initial state toward thermodynamic equilibrium. The degree of equilibration is strongly dependent upon temperature and is considered for three temperature regimes which are distinguished by the varying mobilities of interstitial and substitutional atoms. In addition, perturbations resulting from the irradiation environment are discussed. Examples are given of the use of implanted and annealed alloys in studies of diffusion, phase diagrams, and solute trapping

  11. Colour annealing - a toy model of colour reconnections

    International Nuclear Information System (INIS)

    Sandhoff, Marisa; Wuppertal U.; Skands, Peter; Fermilab

    2005-01-01

    We present a simple toy model for colour reconnections at the nonperturbative level. The model resembles an annealing-type algorithm and is applicable to any collider and process type, though we argue for a possible enhancement of the effect in hadron-hadron collisions. We present a simple application and study of the consequences for semileptonic t(bar t) events at the Tevatron

  12. Application of annealing for WWER vessels life extension

    International Nuclear Information System (INIS)

    Badanin, V.I.; Gorynin, I.V.; Nickolaev, V.A.; Dragunov, Y.G.; Fedorov, V.G.

    1989-01-01

    Safe operation of NPP is greatly dependent on the guarantee of reactor vessel brittle failure strength with account for the effect of radiation embrittlement of vessel material. Recovery of irradiated material properties is principally important way to extend radiation life of reactor vessel. The aim of this report is to demonstrate the efficiency of annealing for recovery of vessel material properties and extension of its service-life

  13. Reverse degradation of nickel graphene junction by hydrogen annealing

    Directory of Open Access Journals (Sweden)

    Zhenjun Zhang

    2016-02-01

    Full Text Available Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen annealing at moderate temperature (300 0C is an effective technique to reverse the degradation.

  14. Manufacture of Radio Frequency Micromachined Switches with Annealing

    OpenAIRE

    Lin, Cheng-Yang; Dai, Ching-Liang

    2014-01-01

    The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspe...

  15. Prime factorization using quantum annealing and computational algebraic geometry

    Science.gov (United States)

    Dridi, Raouf; Alghassi, Hedayat

    2017-02-01

    We investigate prime factorization from two perspectives: quantum annealing and computational algebraic geometry, specifically Gröbner bases. We present a novel autonomous algorithm which combines the two approaches and leads to the factorization of all bi-primes up to just over 200000, the largest number factored to date using a quantum processor. We also explain how Gröbner bases can be used to reduce the degree of Hamiltonians.

  16. Prime factorization using quantum annealing and computational algebraic geometry

    OpenAIRE

    Dridi, Raouf; Alghassi, Hedayat

    2017-01-01

    We investigate prime factorization from two perspectives: quantum annealing and computational algebraic geometry, specifically Gr?bner bases. We present a novel autonomous algorithm which combines the two approaches and leads to the factorization of all bi-primes up to just over 200000, the largest number factored to date using a quantum processor. We also explain how Gr?bner bases can be used to reduce the degree of Hamiltonians.

  17. Colour annealing - a toy model of colour reconnections

    Energy Technology Data Exchange (ETDEWEB)

    Sandhoff, Marisa; /Wuppertal U.; Skands, Peter; /Fermilab

    2005-12-01

    We present a simple toy model for colour reconnections at the nonperturbative level. The model resembles an annealing-type algorithm and is applicable to any collider and process type, though we argue for a possible enhancement of the effect in hadron-hadron collisions. We present a simple application and study of the consequences for semileptonic t{bar t} events at the Tevatron.

  18. The precipitation in annealing and its effect on permittivity of Fe–Si–Al powders

    International Nuclear Information System (INIS)

    Li, Gang; Cui, Yin; Zhang, Nan; Wang, Xin; Xie, Jian Liang

    2016-01-01

    SEM images show that some precipitates distributed on the surface of as-annealed Fe–Si–Al powders. Subsequent experimental results indicate that both morphology and microstructure of as-annealed Fe–Si–Al powders change with increasing annealing temperature. Meanwhile, dielectric properties analysis suggesting that both real part ε′ and imaginary part ε″ of the Fe–Si–Al powders decrease significantly after annealed at 450 °C or higher temperature. We assume that it’s the precipitates with low electrical conductivity developed on the surface of powders that increase the surface resistivity of as-annealed powders and leading to a lower imagine part of permittivity. The drop of real part ε′ ascribed to the weakened interfacial polarization which resulted from the decrease of structural defects such as grain boundaries and interfaces during annealing process. - Highlights: • As-milled Fe–Si–Al powders were annealed at various temperature. • The change of morphology and microstructure of as-annealed Fe–Si–Al was examined. • Complex permittivity decrease significantly after annealed over 400 °C and permeability increase as annealing temperature rises. • The precipitation process in annealing and its effect on permittivity were analyzed.

  19. Nuclear techniques of analysis in diamond synthesis and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D. N.; Prawer, S.; Gonon, P.; Walker, R.; Dooley, S.; Bettiol, A.; Pearce, J. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Nuclear techniques of analysis have played an important role in the study of synthetic and laser annealed diamond. These measurements have mainly used ion beam analysis with a focused MeV ion beam in a nuclear microprobe system. A variety of techniques have been employed. One of the most important is nuclear elastic scattering, sometimes called non-Rutherford scattering, which has been used to accurately characterise diamond films for thickness and composition. This is possible by the use of a database of measured scattering cross sections. Recently, this work has been extended and nuclear elastic scattering cross sections for both natural boron isotopes have been measured. For radiation damaged diamond, a focused laser annealing scheme has been developed which produces near complete regrowth of MeV phosphorus implanted diamonds. In the laser annealed regions, proton induced x-ray emission has been used to show that 50 % of the P atoms occupy lattice sites. This opens the way to produce n-type diamond for microelectronic device applications. All these analytical applications utilize a focused MeV microbeam which is ideally suited for diamond analysis. This presentation reviews these applications, as well as the technology of nuclear techniques of analysis for diamond with a focused beam. 9 refs., 6 figs.

  20. Nuclear techniques of analysis in diamond synthesis and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D N; Prawer, S; Gonon, P; Walker, R; Dooley, S; Bettiol, A; Pearce, J [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    Nuclear techniques of analysis have played an important role in the study of synthetic and laser annealed diamond. These measurements have mainly used ion beam analysis with a focused MeV ion beam in a nuclear microprobe system. A variety of techniques have been employed. One of the most important is nuclear elastic scattering, sometimes called non-Rutherford scattering, which has been used to accurately characterise diamond films for thickness and composition. This is possible by the use of a database of measured scattering cross sections. Recently, this work has been extended and nuclear elastic scattering cross sections for both natural boron isotopes have been measured. For radiation damaged diamond, a focused laser annealing scheme has been developed which produces near complete regrowth of MeV phosphorus implanted diamonds. In the laser annealed regions, proton induced x-ray emission has been used to show that 50 % of the P atoms occupy lattice sites. This opens the way to produce n-type diamond for microelectronic device applications. All these analytical applications utilize a focused MeV microbeam which is ideally suited for diamond analysis. This presentation reviews these applications, as well as the technology of nuclear techniques of analysis for diamond with a focused beam. 9 refs., 6 figs.

  1. Annealing Induced Softening in Deformed AI-4043 Alloy

    International Nuclear Information System (INIS)

    Saad, G.; Fawzy, A.; Soliman, H.N.; Mohammed, Gh.; Fayek, S.A.

    2011-01-01

    The present paper is devoted to study the effect of annealing temperature for different annealing periods of time on the structure and consequently on the tensile properties of Al-4043 alloy. The obtained results showed that the microstructure of AI-4043 alloy is characterized by the presence of spherically shaped Si-particles, which were found to be uniformly distributed within the AI-matrix. Stress-strain characterizations of AI-4043 samples annealed at different temperatures (T a = 573, 673 and 773 K) for different periods of time (t a = 0.5, 1,2.5,5 and 10 h), showed that the tensile parameters; yield stress ε y 0.2 and fracture stress ε f were decreased with increasing Ta and/or ta while the total strain ε T was increased. This was interpreted in terms of growth of Si-particles with increasing T a and/or t a . Attention has been also paid to the role of the minor elements Fe, Cu and Ti on the structure and tensile response behavior of the alloy under investigation

  2. Annealing simulation of cascade damage using MARLOWE-DAIQUIRI codes

    International Nuclear Information System (INIS)

    Muroga, Takeo

    1984-01-01

    The localization effect of the defects generated by the cascade damage on the properties of solids was studied by using a computer code. The code is based on the two-body collision approximation method and the Monte Carlo method. The MARLOWE and DAIQUIRI codes were partly improved to fit the present calculation of the annealing of cascade damage. The purpose of this study is to investigate the behavior of defects under the simulated reactive and irradiation condition. Calculation was made for alpha iron (BCC), and the threshold energy was set at 40 eV. The temperature dependence of annealing and the growth of a cluster were studied. The overlapping effect of cascade was studied. At first, the extreme case of overlapping was studied, then the practical cases were estimated by interpolation. The state of overlapping of cascade corresponded to the irradiation speed. The interaction between cascade and dislocations was studied, and the calculation of the annealing of primary knock-out atoms (PKA) in alpha iron was performed. At low temperature, the effect of dislocations was large, but the growth of vacancy was not seen. At high temperature, the effect of dislocations was small. The evaluation of the simulation of various ion irradiation and the growth efficiency of defects were performed. (Kato, T.)

  3. Chromium depletion from stainless steels during vacuum annealing

    International Nuclear Information System (INIS)

    Smith, A.F.; Hales, R.

    1977-01-01

    During selective chromium oxidation of stainless steels the changes in chromium concentration at the metal surface and in the metal have an important bearing on the overall oxidation performance. It has been proposed that an analogue of chromium behaviour during selective oxidation is obtained from volatilisation of chromium during high temperature vacuum annealing. In the present report the evaporation of chromium from 316 type of steel, vacuum annealed at 1,000 0 C, has been investigated by means of energy dispersive X-ray analysis and by neutron activation analysis. It was established that chromium loss from austenitic stainless steels is rate controlled by interdiffusion in the alloy. As predicted the chromium concentration at the metal surface decreased with increasing vacuum annealing time. The chromium depletion profile in the metal was in good agreement with the previously derived model apart from an anomalous region near the surface. Here the higher resolution of the neutron activation technique indicated a zone within approximately 2μm of the surface where the chromium concentration decreased more steeply than expected. (orig.) [de

  4. Inert annealing of irradiated graphite by inductive heating

    International Nuclear Information System (INIS)

    Botzem, W.; Woerner, J.

    2001-01-01

    Fission neutrons change physical properties of graphite being used in nuclear reactors as moderator and as structural material. The understanding of these effects on an atomic model is expressed by dislocations of carbon atoms within the graphite and the thereby stored energy is known as Wigner Energy. The dismantling of the Pile 1 core may necessitate the thermal treatment of the irradiated but otherwise undamaged graphite. This heat treatment - usually called annealing - initiates the release of stored Wigner Energy in a controlled manner. This energy could otherwise give rise to an increase in temperature under certain conditions during transport or preparation for final storage. In order to prevent such an effect it is intended to anneal the major part of Pile 1 graphite before it is packed into boxes suitable for final disposal. Different heating techniques have been assessed. Inductive heating in an inert atmosphere was selected for installation in the Pile 1 Waste Processing Facility built for the treatment and packaging of the dismantled Pile 1 waste. The graphite blocks will be heated up to 250 deg. C in the annealing ovens, which results in the release of significant amount of the stored energy. External heat sources in a final repository will never heat up the storage boxes to such a temperature. (author)

  5. Effect of annealing on parameters of synthetic opal

    International Nuclear Information System (INIS)

    Gajiev, G M; Kurdyukov, D A; Travnikov, V V

    2006-01-01

    We report on the effect of high temperature annealing on the reflection spectra of synthetic opals. The analysis of conditions for simultaneous diffraction on the (111) planes parallel and inclined to the sample surface has shown that both annealed and unannealed opals are compressed along the growth [111] axis and the shape of the SiO 2 balls forming the opals' close packed structure can be described as spheroidal. The structure parameters were evaluated from the analysis of the angular dependences of the peak positions in the Bragg reflection spectra of unfilled and glycerol-filled samples. The major effect of annealing is due to the sintering (interpenetration) of the structural elements of opals. The maximum temperature of 1050 deg. C leads to a 10-fold increase in the degree of spheroid sintering. As a result, the interspheroid spacing decreases by over 10%, while the filling factor increases from 0.75 to 0.96 together with the effective dielectric constant of the opal as a whole (from 1.74 to 2.08). Sintering takes place not only between spheroids, but also inside spheroids between the α-SiO 2 nanoparticles constituting them. This results in a noticeable (by ∼7%) increase in the dielectric constant of opal spheroids

  6. Regrowth zones in laser annealed radiation damaged diamond

    International Nuclear Information System (INIS)

    Jamieson, D.N.; Prawer, S.; Dooley, S.P.; Kalish, R.; Technion-Israel Inst. of Tech., Haifa

    1993-01-01

    Focused laser annealing of ion implanted diamond with a 15 μm diameter laser spot produces as variety of effects that depend on the power density of the laser. Channeling Contrast Microscopy (CCM) provides a relatively straight forward, rapid, method to analyse the annealed regions of the diamond to characterize the effects. In order of increasing laser power density, effects that are observed include: regrowth of the end of range damage of the ion implantation, formation of a buried graphitic layer and complete graphitization of the surface of the diamond down to the bottom of the original damage layer. Information provided by CCM leads to an understanding the causes of these effects and provides insight into the carbon phase diagram in the neighbourhood of the graphite to diamond phase transition. Analysis of the effects of laser annealing by CCM are complicated by the swelling of the diamond lattice caused by the original ion implantation, compaction following regrowth and the effect of the analysis beam irradiation itself. 12 refs., 5 figs

  7. Damage and in-situ annealing during ion implantation

    International Nuclear Information System (INIS)

    Sadana, D.K.; Washburn, J.; Byrne, P.F.; Cheung, N.W.

    1982-11-01

    Formation of amorphous (α) layers in Si during ion implantation in the energy range 100 keV-11 MeV and temperature range liquid nitrogen (LN)-100 0 C has been investigated. Cross-sectional transmission electron microscopy (XTEM) shows that buried amorphous layers can be created for both room temperature (RT) and LN temperature implants, with a wider 100 percent amorphous region for the LN cooled case. The relative narrowing of the α layer during RT implantation is attributed to in-situ annealing. Implantation to the same fluence at temperatures above 100 0 C does not produce α layers. To further investigate in situ annealing effects, specimens already containing buried α layers were further irradiated with ion beams in the temperature range RT-400 0 C. It was found that isolated small α zones (less than or equal to 50 diameter) embedded in the crystalline matrix near the two α/c interfaces dissolved into the crystal but the thickness of the 100 percent α layer was not appreciably affected by further implantation at 200 0 C. A model for in situ annealing during implantation is presented

  8. Nuclear techniques of analysis in diamond synthesis and annealing

    International Nuclear Information System (INIS)

    Jamieson, D. N.; Prawer, S.; Gonon, P.; Walker, R.; Dooley, S.; Bettiol, A.; Pearce, J.

    1996-01-01

    Nuclear techniques of analysis have played an important role in the study of synthetic and laser annealed diamond. These measurements have mainly used ion beam analysis with a focused MeV ion beam in a nuclear microprobe system. A variety of techniques have been employed. One of the most important is nuclear elastic scattering, sometimes called non-Rutherford scattering, which has been used to accurately characterise diamond films for thickness and composition. This is possible by the use of a database of measured scattering cross sections. Recently, this work has been extended and nuclear elastic scattering cross sections for both natural boron isotopes have been measured. For radiation damaged diamond, a focused laser annealing scheme has been developed which produces near complete regrowth of MeV phosphorus implanted diamonds. In the laser annealed regions, proton induced x-ray emission has been used to show that 50 % of the P atoms occupy lattice sites. This opens the way to produce n-type diamond for microelectronic device applications. All these analytical applications utilize a focused MeV microbeam which is ideally suited for diamond analysis. This presentation reviews these applications, as well as the technology of nuclear techniques of analysis for diamond with a focused beam. 9 refs., 6 figs

  9. Reactor controller design using genetic algorithms with simulated annealing

    International Nuclear Information System (INIS)

    Erkan, K.; Buetuen, E.

    2000-01-01

    This chapter presents a digital control system for ITU TRIGA Mark-II reactor using genetic algorithms with simulated annealing. The basic principles of genetic algorithms for problem solving are inspired by the mechanism of natural selection. Natural selection is a biological process in which stronger individuals are likely to be winners in a competing environment. Genetic algorithms use a direct analogy of natural evolution. Genetic algorithms are global search techniques for optimisation but they are poor at hill-climbing. Simulated annealing has the ability of probabilistic hill-climbing. Thus, the two techniques are combined here to get a fine-tuned algorithm that yields a faster convergence and a more accurate search by introducing a new mutation operator like simulated annealing or an adaptive cooling schedule. In control system design, there are currently no systematic approaches to choose the controller parameters to obtain the desired performance. The controller parameters are usually determined by test and error with simulation and experimental analysis. Genetic algorithm is used automatically and efficiently searching for a set of controller parameters for better performance. (orig.)

  10. Maximum-Entropy Inference with a Programmable Annealer

    Science.gov (United States)

    Chancellor, Nicholas; Szoke, Szilard; Vinci, Walter; Aeppli, Gabriel; Warburton, Paul A.

    2016-03-01

    Optimisation problems typically involve finding the ground state (i.e. the minimum energy configuration) of a cost function with respect to many variables. If the variables are corrupted by noise then this maximises the likelihood that the solution is correct. The maximum entropy solution on the other hand takes the form of a Boltzmann distribution over the ground and excited states of the cost function to correct for noise. Here we use a programmable annealer for the information decoding problem which we simulate as a random Ising model in a field. We show experimentally that finite temperature maximum entropy decoding can give slightly better bit-error-rates than the maximum likelihood approach, confirming that useful information can be extracted from the excited states of the annealer. Furthermore we introduce a bit-by-bit analytical method which is agnostic to the specific application and use it to show that the annealer samples from a highly Boltzmann-like distribution. Machines of this kind are therefore candidates for use in a variety of machine learning applications which exploit maximum entropy inference, including language processing and image recognition.

  11. Excimer laser annealing of shallow As and B doped layers

    International Nuclear Information System (INIS)

    Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.; Magna, A. La; Privitera, V.; Camalleri, M.; Fortunato, G.; Mariucci, L.

    2004-01-01

    Excimer laser annealing (ELA) of As-, B- and BF 2 -implanted Si has been studied by secondary ion mass spectrometry (SIMS), spreading resistance probe (SRP) and transmission electron microscopy (TEM). The implantations have been performed in the energy range from 1 to 30 keV with doses of 10 15 -10 16 cm -2 . ELA has been carried out with the energy densities in the range of 600-1200 mJ/cm 2 and the number of laser pulses from 1 to 10. It is shown that ELA results in a more uniform dopant distribution over the doped region with a more abrupt profile edge as compared to those after rapid thermal annealing (RTA). Besides, in contrast to RTA, ELA demonstrates a highly confined annealing effect, where the distribution of dopants below the melting region is not affected. SRP measurements demonstrate almost complete activation of the implanted dopants after ELA, and TEM does not reveal extended defects in the ELA-treated samples. The depth of the doped layers, abruptness of the profiles and the total doping dose as a function of ELA energy density and number of laser pulses are investigated. Computer simulations of ELA show a good agreement with the experimental data

  12. Structural transformation of implanted diamond layers during high temperature annealing

    International Nuclear Information System (INIS)

    Rubanov, S.; Fairchild, B.A.; Suvorova, A.; Olivero, P.; Prawer, S.

    2015-01-01

    In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond–air interface. The real quality of this interface could depend on degree of graphitization of the amorphous damage layers after annealing. In the present work the graphitization process was studied using conventional and analytical TEM. It was found that annealing at 550 °C results in a partial graphitization of the implanted volume with formation of the nano-crystalline graphitic phase sandwiched between layers of tetrahedral amorphous carbon. Annealing at 1400 °C resulted in complete graphitization of the amorphous layers. The average size of graphite nano-crystals did not exceed 5 nm with predominant orientation of c-planes normal to the sample surface.

  13. Rapid magnetic hardening by rapid thermal annealing in NdFeB-based nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Chu, K.-T.; Jin, Z Q; Chakka, Vamsi M; Liu, J P [Department of Physics, University of Texas at Arlington, Arlington, TX 76019 (United States)

    2005-11-21

    A systematic study of heat treatments and magnetic hardening of NdFeB-based melt-spun nanocomposite ribbons have been carried out. Comparison was made between samples treated by rapid thermal annealing and by conventional furnace annealing. Heating rates up to 200 K s{sup -1} were adopted in the rapid thermal processing. It was observed that magnetic hardening can be realized in an annealing time as short as 1 s. Coercivity of 10.2 kOe in the nanocomposites has been obtained by rapid thermal annealing for 1 s, and prolonged annealing did not give any increase in coercivity. Detailed results on the effects of annealing time, temperature and heating rate have been obtained. The dependence of magnetic properties on the annealing parameters has been investigated. Structural characterization revealed that there is a close correlation between magnetic hardening and nanostructured morphology. The coercivity mechanism was also studied by analysing the magnetization minor loops.

  14. The effect of annealing atmosphere on the thermoluminescence of synthetic calcite

    International Nuclear Information System (INIS)

    Pagonis, Vasilis

    1998-01-01

    Samples of high purity calcite powder were annealed in air, nitrogen and carbon dioxide atmospheres in the temperature range 300-700 deg. C and in atmospheric pressure. The samples were subsequently irradiated and the effect of the annealing atmosphere and temperature on the thermoluminescence (TL) of the samples was studied. Our results show that both carbonate and oxygen ions play an important part in the TL of calcite annealed in this temperature range. The intensities of the TL signal in the nitrogen and carbon dioxide anneals rise continuously with the annealing temperature. For all annealing temperatures it was found that the carbon dioxide atmosphere caused an increase in the observed TL signal as compared with anneals in an inert nitrogen atmosphere, while the shape of the TL glow curves remained the same. This increase in the observed TL signal is explained via the surface adsorption of carbonate ions. The shape and location of the TL peaks suggest that samples annealed in air exhibit a different type of TL center than samples annealed in nitrogen and carbon dioxide atmospheres. A possible mechanism for the role of oxygen ions involves a surface adsorption process and a subsequent diffusion of oxygen ions in the bulk of the crystal. Annealing of the samples in air at temperatures T>600 deg. C causes a collapse of the TL signal, in agreement with previous studies of calcite powders. No such collapse of the TL signal is observed for the nitrogen and carbon dioxide anneals, suggesting that a different type of TL center and/or recombination center is involved in air anneals. Arrhenius plots for the air anneals yield an activation energy E=0.45±0.05 eV, while the carbon dioxide and nitrogen anneals yield a lower activation energy E=0.28±0.04 eV

  15. Influence of initial annealing on structure evolution and magnetic properties of 3.4% Si non-oriented steel during final annealing

    Energy Technology Data Exchange (ETDEWEB)

    Simões Mendanha Pedrosa, Josiane [Department of Physics, Federal University of Ouro Preto, Ouro Preto MG-3540000 (Brazil); Costa Paolinelli, Sebastião da [Research Department Aperam South America, Praça Primeiro de Maio, 9, Timóteo MG-35180018 (Brazil); Barros Cota, André, E-mail: abcota@ufop.br [Department of Physics, Federal University of Ouro Preto, Ouro Preto MG-3540000 (Brazil)

    2015-11-01

    The effect of the initial annealing on structure evolution and magnetic properties during the final annealing of a 3.4% Si non-oriented grain steel was evaluated. Half of the samples were submitted to initial annealing at 1030 °C before cold rolling and all samples were subjected to final annealing process at temperatures from 540 °C to 1100 °C. The magnetic induction and core loss in the final samples, the microstructure by optical microscopy and the crystallographic texture by X-ray diffraction and EBSD were evaluated. The results show that the samples without initial annealing presented better magnetic properties than the samples with initial annealing, due to the higher ratio between Eta fiber and Gamma fiber volume fractions (Eta/Gamma ratio) in their structure after final annealing. - Highlights: • Texture and magnetic properties of 3.4% Si non-oriented electrical steel were measured. • Without initial annealing, better texture and magnetic properties were obtained. • Good texture and magnetic properties are obtained with Steckel hot band structure.

  16. Improvement on the electrical characteristics of Pd/HfO{sub 2}/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing

    Energy Technology Data Exchange (ETDEWEB)

    Esakky, Papanasam, E-mail: papanasamte@gmail.com; Kailath, Binsu J

    2017-08-15

    Highlights: • Post deposition annealing (PDA) and post metallization annealing (PMA) on the electrical characteristics of Pd/HfO{sub 2}/6H-SiC MIS capacitors. • Post deposition N{sub 2}O plasma annealing inhibits crystallization of HfO{sub 2} during high temperature annealing. • Plasma annealing followed by RTA in N{sub 2} results in formation of hafnium silicate at the HfO{sub 2}-SiC interface. • PDA reduces interface state density (D{sub it}) and gate leakage current density (J{sub g}) by order. • PMA in forming gas for 40 min results in better passivation and reduces D{sub it} by two orders and J{sub g} by thrice. - Abstract: HfO{sub 2} as a gate dielectric enables high electric field operation of SiC MIS structure and as gas sensor HfO{sub 2}/SiC capacitors offer higher sensitivity than SiO{sub 2}/SiC capacitors. The issue of higher density of oxygen vacancies and associated higher leakage current necessitates better passivation of HfO{sub 2}/SiC interface. Effect of post deposition annealing in N{sub 2}O plasma and post metallization annealing in forming gas on the structural and electrical characteristics of Pd/HfO{sub 2}/SiC MIS capacitors are reported in this work. N{sub 2}O plasma annealing suppresses crystallization during high temperature annealing thereby improving the thermal stability and plasma annealing followed by rapid thermal annealing in N{sub 2} result in formation of Hf silicate at the HfO{sub 2}/SiC interface resulting in order of magnitude lower density of interface states and gate leakage current. Post metallization annealing in forming gas for 40 min reduces interface state density by two orders while gate leakage current density is reduced by thrice. Post deposition annealing in N{sub 2}O plasma and post metallization annealing in forming gas are observed to be effective passivation techniques improving the electrical characteristics of HfO{sub 2}/SiC capacitors.

  17. Effect of tensile stress on the annealed structure of a metallic glass

    International Nuclear Information System (INIS)

    Vianco, P.T.; Li, J.C.M.

    1987-01-01

    The low-temperature (120 0 --245 0 C) structural relaxation of Metglas/sup R/ 2826B (Ni 49 Fe 29 P 14 B 6 Si 2 ) amorphous alloy was investigated for samples subjected to a tensile stress in the range of 20--400 MPa during annealing. The stress-annealed samples demonstrated a much smaller increase of microhardness than was observed in similarly annealed ribbons without a stress. Further heat treatment of the stress-annealed specimens, this time without the stress, was capable of increasing the microhardnesses of only some ribbons to values equal to those of samples similarly heat treated initially without a stress. An additional exothermic peak in the differential scanning calorimetry (DSC) thermograms of the stress-annealed specimens indicated the presence of a more disordered structure at room temperature, which was found to correlate with the lower microhardness values. Otherwise, those artifacts of the DSC thermograms that were characteristic of samples annealed without a stress were still present in the stress-annealed ribbons. No effect on the crystallization temperature was noted but the glass transition temperature was increased in the stress-annealed case with respect to values attained when the stress was absent during heat treatment. A reduction in the degree of embrittlement of those samples annealed with a tensile stress was a further indication of more disorder in the stress-annealed ribbons

  18. Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing.

    Science.gov (United States)

    Fang, F; Markwitz, A

    2009-05-01

    Silicon nanostructures, called Si nanowhiskers, are successfully synthesized on Si(100) substrate by high vacuum electron beam annealing. The onset temperature and duration needed for the Si nanowhiskers to grow was investigated. It was found that the onset and growth morphology of Si nanowhiskers strongly depend on the annealing temperature and duration applied in the annealing cycle. The onset temperature for nanowhisker growth was determined as 680 degrees C using an annealing duration of 90 min and temperature ramps of +5 degrees C s(-1) for heating and -100 degrees C s(-1) for cooling. Decreasing the annealing time at peak temperature to 5 min required an increase in peak temperature to 800 degrees C to initiate the nanowhisker growth. At 900 degrees C the duration for annealing at peak temperature can be set to 0 s to grow silicon nanowhiskers. A correlation was found between the variation in annealing temperature and duration and the nanowhisker height and density. Annealing at 900 degrees C for 0 s, only 2-3 nanowhiskers (average height 2.4 nm) grow on a surface area of 5 x 5 microm, whereas more than 500 nanowhiskers with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 degrees C for 0 s. Selected results are presented showing the possibility of controlling the density and height of Si nanowhisker growth for field emission applications by applying different annealing temperature and duration.

  19. Rapid thermal and swift heavy ion induced annealing of Co ion implanted GaN films

    International Nuclear Information System (INIS)

    Baranwal, V.; Pandey, A. C.; Gerlach, J. W.; Rauschenbach, B.; Karl, H.; Kanjilal, D.; Avasthi, D. K.

    2008-01-01

    Thin epitaxial GaN films grown on 6H-SiC(0001) substrates were implanted with 180 keV Co ions at three different fluences. As-implanted samples were characterized with secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain the Co depth profiles and the maximum Co concentrations. As-implanted samples were annealed applying two different techniques: rapid thermal annealing and annealing by swift heavy ion irradiation. Rapid thermal annealing was done at two temperatures: 1150 deg. C for 20 s and 700 deg. C for 5 min. 200 MeV Ag ions at two fluences were used for annealing by irradiation. Crystalline structure of the pristine, as-implanted, and annealed samples was investigated using x-ray diffraction, and the results were compared. Improvement of the crystalline quality was observed for rapid thermal annealed samples at the higher annealing temperature as confirmed with rocking curve measurements. The results indicate the presence of Co clusters in these annealed samples. Swift heavy ion irradiation with the parameters chosen for this study did not lead to a significant annealing

  20. Microstructure and mechanical properties of annealed SUS 304H austenitic stainless steel with copper

    Energy Technology Data Exchange (ETDEWEB)

    Sen, Indrani [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Amankwah, E. [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Department of Materials Science, African University of Science and Technology, Abuja (Nigeria); Kumar, N.S. [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Fleury, E. [Center for High Temperature Energy Materials, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Oh-ishi, K.; Hono, K. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Ramamurty, U., E-mail: ramu@materials.iisc.ernet.in [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India)

    2011-05-25

    Research highlights: {yields} SUS 304H austenitic stainless steel containing 3 wt.% Cu was annealed at 700 deg. C for up to 100 h. {yields} Microstructure and mechanical properties of annealed alloys are examined. {yields} Nano-sized Cu-rich precipitation upon annealing. {yields} Strength of the alloy remains invariant with annealing whereas ductility improves. {yields} Fatigue crack growth threshold of 3 wt.% Cu added alloy increases with annealing. - Abstract: An experimental investigation into the effect of Cu on the mechanical properties of 0 and 3 wt.% Cu added SUS 304H austenitic stainless steel upon annealing at 700 deg. C for up to 100 h was conducted. Optical microscopy reveals grain coarsening in both the alloys upon annealing. Observations by transmission electron microscopy revealed the precipitation of nanometer-sized spherical Cu particles distributed within the austenitic grains and the presence of carbides at the dislocations. Both the yield and ultimate tensile strengths of the alloys were found to remain invariant with annealing. Tensile ductility and the threshold stress intensity factor range for fatigue crack growth for 3 wt.% Cu added alloy increase with annealing. These are attributed to the grain coarsening with annealing. In all, the addition of Cu to SUS 304H does not affect the mechanical performance adversely while improving creep resistance.

  1. Influence of annealing conditions on anodic tungsten oxide layers and their photoelectrochemical activity

    International Nuclear Information System (INIS)

    Syrek, Karolina; Zych, Marta; Zaraska, Leszek; Sulka, Grzegorz D.

    2017-01-01

    Highlights: • Effect of annealing temperature on the morphology and crystalline structure of anodic WO 3 was investigated. • Photoelectrochemical properties of WO 3 layers annealed at different temperatures were studied. • Edges of conduction and valence bands were estimated for tungsten oxide layers annealed at different temperatures. • Influence of annealing time on crystalline structure, morphology and photoelectrochemical performance was studied. - Abstract: The nanoporous tungsten oxide films having an amorphous structure were prepared in an electrolyte containing fluoride ions via an anodization process. The as-synthesized anodic oxide layers can be easily converted to the monoclinic WO 3 phase upon annealing in air. The as-synthesized and annealed WO 3 layers were investigated by using X-ray diffraction, scanning electron microscopy, and photocurrent spectroscopy. The effect of annealing temperature and annealing time on the oxide morphology, crystal structure and electrochemical properties were studied. The samples were annealed in air at the temperatures ranging from 400 to 600 °C, and it was found that the original porous morphology of oxide is completely lost after annealing at 600 °C. The changes in the average crystallite sizes upon annealing were confirmed by XRD measurements. The photoelectrochemical performance of the annealed WO 3 layers were studied under pulsed UV illumination, and the highest photocurrents were observed at the incident light wavelength of 350 nm for the sample annealed at 500 °C for 2 h. The band gap energy and the positions of conduction and valence band edges were determined for all studied samples.

  2. Ising formulation of associative memory models and quantum annealing recall

    Science.gov (United States)

    Santra, Siddhartha; Shehab, Omar; Balu, Radhakrishnan

    2017-12-01

    Associative memory models, in theoretical neuro- and computer sciences, can generally store at most a linear number of memories. Recalling memories in these models can be understood as retrieval of the energy minimizing configuration of classical Ising spins, closest in Hamming distance to an imperfect input memory, where the energy landscape is determined by the set of stored memories. We present an Ising formulation for associative memory models and consider the problem of memory recall using quantum annealing. We show that allowing for input-dependent energy landscapes allows storage of up to an exponential number of memories (in terms of the number of neurons). Further, we show how quantum annealing may naturally be used for recall tasks in such input-dependent energy landscapes, although the recall time may increase with the number of stored memories. Theoretically, we obtain the radius of attractor basins R (N ) and the capacity C (N ) of such a scheme and their tradeoffs. Our calculations establish that for randomly chosen memories the capacity of our model using the Hebbian learning rule as a function of problem size can be expressed as C (N ) =O (eC1N) , C1≥0 , and succeeds on randomly chosen memory sets with a probability of (1 -e-C2N) , C2≥0 with C1+C2=(0.5-f ) 2/(1 -f ) , where f =R (N )/N , 0 ≤f ≤0.5 , is the radius of attraction in terms of the Hamming distance of an input probe from a stored memory as a fraction of the problem size. We demonstrate the application of this scheme on a programmable quantum annealing device, the D-wave processor.

  3. Mechanical annealing in the flow of supercooled metallic liquid

    International Nuclear Information System (INIS)

    Zhang, Meng; Dai, Lan Hong; Liu, Lin

    2014-01-01

    Flow induced structural evolution in a supercooled metallic liquid Vit106a (Zr 58.5 Cu 15.6 Al 10.3 Ni 12.8 Nb 2.8 , at. %) was investigated via uni-axial compression combined with differential scanning calorimeter (DSC). Compression tests at strain rates covering the transition from Newtonian flow to non-Newtonian flow and at the same strain rate 2 × 10 −1 s −1 to different strains were performed at the end of glass transition (T g-end  = 703 K). The relaxation enthalpies measured by DSC indicate that the samples underwent non-Newtonian flow contain more free volume than the thermally annealed sample (703 K, 4 min), while the samples underwent Newtonian flow contain less, namely, the free volume of supercooled metallic liquids increases in non-Newtonian flow, while decreases in Newtonian flow. The oscillated variation of the relaxation enthalpies of the samples deformed at the same strain rate 2 × 10 −1 s −1 to different strains confirms that the decrease of free volume was caused by flow stress, i.e., “mechanical annealing.” Micro-hardness tests were also performed to show a similar structural evolution tendency. Based on the obtained results, the stress-temperature scaling in the glass transition of metallic glasses are supported experimentally, as stress plays a role similar to temperature in the creation and annihilation of free volume. In addition, a widening perspective angle on the glass transition of metallic glasses by exploring the 3-dimensional stress-temperature-enthalpy phase diagram is presented. The implications of the observed mechanical annealing effect on the amorphous structure and the work-hardening mechanism of metallic glasses are elucidated based on atomic level stress model

  4. Irradiation and annealing of p-type silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor' eva, Maria V.; Lebedev, Sergey P. [A.F. Ioffe Physical-Technical Institute, St. Petersburg, 194021 (Russian Federation); Kozlovski, Vitaly V. [St. Petersburg State Polytechnic University, St. Petersburg, 195251 (Russian Federation)

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  5. Annealing behaviour of MeV erbium implanted lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Gortmaker, P; McCallum, J C [Royal Melbourne Inst. of Tech., VIC (Australia)

    1994-12-31

    Lithium niobate (LiNbO{sub 3}) is a crystalline ceramic commonly used in the fabrication of optoelectronic devices. Recently, rare earth doping of LiNbO{sub 3} has become a topic of particular interest. The electronic configuration of rare earth elements such as Erbium (Er) and Neodymium (Nd) allows them to lase in nearly any host matrix making fabrication of a whole range of new optoelectronic devices possible. At present, the doping technique, for LiNbO{sub 3} are centred upon diffusion technology, but the diffusion profiles for the rare earths are not generally well-matched to the optical modes of the device. The aim of this research is to develop MeV implantation and annealing conditions of rare earth doped LiNbO{sub 3} that would be compatible with optoelectronic device fabrication. To determine the characteristics of the rare earth elements in the LiNbO{sub 3} host material over the depth range of interest in optoelectronic device applications, high energy Rutherford backscattering spectrometry and ion channeling (RBS-C) must be used. Presented here are the Er depth profile and lattice damage results obtained from 5 MeV RBS-C measurements on samples of LiNbO{sub 3} implanted with various doses of MeV Erbium and subsequently thermally annealed at a temperature of 1000 deg C. It was found that there is a peak implant concentration (2 x 10{sup 16} Er/cm{sup 2}) for which erbium no longer goes substitutional in the lattice, and the implantation damage is not fully removed by annealing. 8 refs., 3 figs.

  6. Reduced-Complexity Deterministic Annealing for Vector Quantizer Design

    Directory of Open Access Journals (Sweden)

    Ortega Antonio

    2005-01-01

    Full Text Available This paper presents a reduced-complexity deterministic annealing (DA approach for vector quantizer (VQ design by using soft information processing with simplified assignment measures. Low-complexity distributions are designed to mimic the Gibbs distribution, where the latter is the optimal distribution used in the standard DA method. These low-complexity distributions are simple enough to facilitate fast computation, but at the same time they can closely approximate the Gibbs distribution to result in near-optimal performance. We have also derived the theoretical performance loss at a given system entropy due to using the simple soft measures instead of the optimal Gibbs measure. We use thederived result to obtain optimal annealing schedules for the simple soft measures that approximate the annealing schedule for the optimal Gibbs distribution. The proposed reduced-complexity DA algorithms have significantly improved the quality of the final codebooks compared to the generalized Lloyd algorithm and standard stochastic relaxation techniques, both with and without the pairwise nearest neighbor (PNN codebook initialization. The proposed algorithms are able to evade the local minima and the results show that they are not sensitive to the choice of the initial codebook. Compared to the standard DA approach, the reduced-complexity DA algorithms can operate over 100 times faster with negligible performance difference. For example, for the design of a 16-dimensional vector quantizer having a rate of 0.4375 bit/sample for Gaussian source, the standard DA algorithm achieved 3.60 dB performance in 16 483 CPU seconds, whereas the reduced-complexity DA algorithm achieved the same performance in 136 CPU seconds. Other than VQ design, the DA techniques are applicable to problems such as classification, clustering, and resource allocation.

  7. Annealing behaviour of MeV erbium implanted lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Gortmaker, P.; McCallum, J.C. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    Lithium niobate (LiNbO{sub 3}) is a crystalline ceramic commonly used in the fabrication of optoelectronic devices. Recently, rare earth doping of LiNbO{sub 3} has become a topic of particular interest. The electronic configuration of rare earth elements such as Erbium (Er) and Neodymium (Nd) allows them to lase in nearly any host matrix making fabrication of a whole range of new optoelectronic devices possible. At present, the doping technique, for LiNbO{sub 3} are centred upon diffusion technology, but the diffusion profiles for the rare earths are not generally well-matched to the optical modes of the device. The aim of this research is to develop MeV implantation and annealing conditions of rare earth doped LiNbO{sub 3} that would be compatible with optoelectronic device fabrication. To determine the characteristics of the rare earth elements in the LiNbO{sub 3} host material over the depth range of interest in optoelectronic device applications, high energy Rutherford backscattering spectrometry and ion channeling (RBS-C) must be used. Presented here are the Er depth profile and lattice damage results obtained from 5 MeV RBS-C measurements on samples of LiNbO{sub 3} implanted with various doses of MeV Erbium and subsequently thermally annealed at a temperature of 1000 deg C. It was found that there is a peak implant concentration (2 x 10{sup 16} Er/cm{sup 2}) for which erbium no longer goes substitutional in the lattice, and the implantation damage is not fully removed by annealing. 8 refs., 3 figs.

  8. Temperature annealing of tracks induced by ion irradiation of graphite

    International Nuclear Information System (INIS)

    Liu, J.; Yao, H.J.; Sun, Y.M.; Duan, J.L.; Hou, M.D.; Mo, D.; Wang, Z.G.; Jin, Y.F.; Abe, H.; Li, Z.C.; Sekimura, N.

    2006-01-01

    Highly oriented pyrolytic graphite (HOPG) samples were irradiated by Xe ions of initial kinetic energy of 3 MeV/u. The irradiations were performed at temperatures of 500 and 800 K. Scanning tunneling microscopy (STM) images show that the tracks occasionally have elongated structures under high-temperature irradiation. The track creation yield at 800 K is by three orders of magnitude smaller compared to that obtained during room-temperature irradiation. STM and Raman spectra show that amorphization occurs in graphite samples irradiated at 500 K to higher fluences, but not at 800 K. The obtained experimental results clearly reveal that the irradiation under high temperature causes track annealing

  9. Recovery of the irradiated JFETs by thermal annealing

    International Nuclear Information System (INIS)

    Assaf, J.

    2007-10-01

    Study about the recovering of irradiated JFET transistors has been reported. The JFETs were damaged totally or partially by exposition to Gamma ray and neutrons. Electronics noise has used to evaluate the effect of radiation and the recovery. The study focused on the recovery by thermal annealing, where samples have been heated gradually until 140 centigrade degree (410 K). The recovery ratio given by this method was higher than that resulted from the relaxation method (time recovery) carried out in the room temperature (300 K), especially for Gamma irradiated samples.(author)

  10. Thermal annealing of natural, radiation-damaged pyrochlore

    Energy Technology Data Exchange (ETDEWEB)

    Zietlow, Peter; Beirau, Tobias; Mihailova, Boriana; Groat, Lee A.; Chudy, Thomas; Shelyug, Anna; Navrotsky, Alexandra; Ewing, Rodney C.; Schlüter, Jochen; Škoda, Radek; Bismayer, Ulrich

    2017-01-01

    Abstract

    Radiation damage in minerals is caused by the α-decay of incorporated radionuclides, such as U and Th and their decay products. The effect of thermal annealing (400–1000 K) on radiation-damaged pyrochlores has been investigated by Raman scattering, X-ray powder diffraction (XRD), and combined differential scanning calorimetry/thermogravimetry (DSC/TG). The analysis of three natural radiation-damaged pyrochlore samples from Miass/Russia [6.4 wt% Th, 23.1·10

  11. Structural defects in laser- and electron-beam annealed silicon

    International Nuclear Information System (INIS)

    Narayan, J.

    1979-01-01

    Laser and electron beam pulses provide almost an ideal source of heat by which thin layers of semiconductors can be rapidly melted and solidified with heating and cooling rates exceeding 10 80 C/sec. Microstructural modifications obtained as a function of laser parameters are examined and it is shown that both laser and electron beam pulses can be used to remove displacement damage, dislocations, dislocation loops and precipitates. Annealing of defects underneath the oxide layers in silicon is possible within a narrow energy window. The formation of cellular structure provides a rather clear evidence of melting which leads to segregation and supercooling, and subsequent cell formation

  12. Annealing in sulfur of CZTS nanoparticles deposited through doctor blading

    DEFF Research Database (Denmark)

    Engberg, Sara Lena Josefin; Crovetto, Andrea

    of the main limitations for this approach, and (2) grain boundaries and defects are believed to be a site for recombination that limit the efficiency. Annealing in vacuum and/or nitrogen atmosphere facilitates grain growth and improves the electronic properties. Conventionally selenization shows the best...... results, however sulfurization has the advantage of being less toxic. In this work, nanocrystals of CZTS with a targeted Cu-poor/Zn-rich composition are synthesized through a hot-injection method with oleylamine as the solvent. The nanocrystal inks are deposited through doctor blading in octanethiol...

  13. Annealed Demon Algorithms Solving the Environmental / Economic Dispatch Problem

    Directory of Open Access Journals (Sweden)

    Aristidis VLACHOS

    2013-06-01

    Full Text Available This paper presents an efficient and reliable Annealed Demon (AD algorithm for the Environmental/Economic Dispatch (EEB problem. The EED problem is a multi-objective non-linear optimization problem with constraints. This problem is one of the fundamentals issues in power system operation. The system of generation associates thermal generators and emissions which involves sulphur oxides (SO2 and nitrogen oxides (NOx. The aim is to minimize total fuel cost of the system and control emission. The proposed AD algorithm is applied for EED of a simple power system.

  14. Restoration of polarimetric SAR images using simulated annealing

    DEFF Research Database (Denmark)

    Schou, Jesper; Skriver, Henning

    2001-01-01

    approach favoring one of the objectives. An algorithm for estimating the radar cross-section (RCS) for intensity SAR images has previously been proposed in the literature based on Markov random fields and the stochastic optimization method simulated annealing. A new version of the algorithm is presented......Filtering synthetic aperture radar (SAR) images ideally results in better estimates of the parameters characterizing the distributed targets in the images while preserving the structures of the nondistributed targets. However, these objectives are normally conflicting, often leading to a filtering...

  15. Combined Simulated Annealing Algorithm for the Discrete Facility Location Problem

    Directory of Open Access Journals (Sweden)

    Jin Qin

    2012-01-01

    Full Text Available The combined simulated annealing (CSA algorithm was developed for the discrete facility location problem (DFLP in the paper. The method is a two-layer algorithm, in which the external subalgorithm optimizes the decision of the facility location decision while the internal subalgorithm optimizes the decision of the allocation of customer's demand under the determined location decision. The performance of the CSA is tested by 30 instances with different sizes. The computational results show that CSA works much better than the previous algorithm on DFLP and offers a new reasonable alternative solution method to it.

  16. Analysis of Trivium by a Simulated Annealing variant

    DEFF Research Database (Denmark)

    Borghoff, Julia; Knudsen, Lars Ramkilde; Matusiewicz, Krystian

    2010-01-01

    This paper proposes a new method of solving certain classes of systems of multivariate equations over the binary field and its cryptanalytical applications. We show how heuristic optimization methods such as hill climbing algorithms can be relevant to solving systems of multivariate equations....... A characteristic of equation systems that may be efficiently solvable by the means of such algorithms is provided. As an example, we investigate equation systems induced by the problem of recovering the internal state of the stream cipher Trivium. We propose an improved variant of the simulated annealing method...

  17. Phase changes in superaustenitic steels after long-term annealing

    Energy Technology Data Exchange (ETDEWEB)

    Svoboda, M.; Kroupa, A. [Inst. of Physics of Materials, Academy of Sciences of Czech Republic, Brno (Czech Republic); Sopousek, J.; Vrest' al, J. [Inst. of Theoretical and Physical Chemistry, Masaryk Univ., Brno (Czech Republic); Miodownik, P. [Thermotech Ltd, The Surrey Research Park, Guildford (United Kingdom)

    2004-11-01

    A structural study was performed on the austenitic steels Avesta 254 SMO and Avesta 654 SMO after annealing at 700 C for 500, 3188, and 6170 h. Both Avesta steels initially show an unexpectedly large amount of the Laves phase, followed by a relatively slow development of the Sigma phase with equilibrium apparently not yet reached after 3188 h. Thermodynamic calculations confirm that the driving forces for alternative precipitates are very similar thus making it easy to form metastable precipitates that only change very slowly to the equilibrium state. TTT calculations also confirm that the Laves phase precipitates earlier than the Sigma phase as the temperature is lowered. (orig.)

  18. Development and anneal of radiation damage in salt

    International Nuclear Information System (INIS)

    Garcia Celma, A.; Donker, H.; Soppe, W.J.; Miralles, L.

    1993-12-01

    Laboratory gamma-irradiations at a constant temperature (100 C) were carried out in two sorts of experiments, one at variable and another at approximately constant dose rates. The damage developed during irradiation was analyzed by thermal analysis, microstructural analysis and small angle neutron scattering. The results were compared with the yields of the Jain-Lidiard model for each experiment. Experiments at a constant dose rate were planned to obtain information on radiation damage development and anneal in conditions as near as possible to those of radioactive waste repository concepts. For this reason the dose rates were kept low. (orig./DG)

  19. Testing of irradiated and annealed 15H2MFA materials

    International Nuclear Information System (INIS)

    Gillemot, F.; Uri, G.

    1994-01-01

    A set of surveillance samples made from 15H2MFA material has been studied in the laboratory of AEKI. Miniature notched tensile specimens were cut from some remnants of irradiated and broke surveillance charpy remnants. The Absorbed Specific Fracture Energy (ASFE) was measured on the specimens. A cutting machine and testing technique were elaborated for the measurements. The second part of the Charpy remnants was annealed at 460 deg. C and 490 deg. C for 6-8 hours. The specimens were tested similarity and the results were compared. (author). 5 refs, 9 figs

  20. Modification of BSCCO surface by excimer laser annealing

    International Nuclear Information System (INIS)

    Ibi, A.; Akitsu, T.; Matsuzawa, H.

    2002-01-01

    Irradiation of Kr-F excimer laser onto the BSCCO calcined pellets changed their surface to be amorphous. SEM micrographs showed that sintering of the irradiated pellets recrystallized the surface layer and much reduced the intergrain gaps as compared with only sintered pellets, whereas the internal structure of the irradiated pellets remained unchanged. This processing made the surface-layer grains be tightly connected, resulting in the higher critical temperature than the conventionally sintered samples. We can say that excimer laser annealing process is a novel scheme to reduce the surface weak-link of the high Tc superconductors. (author)

  1. Optimisation of electron beam characteristics by simulated annealing

    International Nuclear Information System (INIS)

    Ebert, M.A.; University of Adelaide, SA; Hoban, P.W.

    1996-01-01

    Full text: With the development of technology in the field of treatment beam delivery, the possibility of tailoring radiation beams (via manipulation of the beam's phase space) is foreseeable. This investigation involved evaluating a method for determining the characteristics of pure electron beams which provided dose distributions that best approximated desired distributions. The aim is to determine which degrees of freedom are advantageous and worth pursuing in a clinical setting. A simulated annealing routine was developed to determine optimum electron beam characteristics. A set of beam elements are defined at the surface of a homogeneous water equivalent phantom defining discrete positions and angles of incidence, and electron energies. The optimal weighting of these elements is determined by the (generally approximate) solution to the linear equation, Dw = d, where d represents the dose distribution calculated over the phantom, w the vector of (50 - 2x10 4 ) beam element relative weights, and D a normalised matrix of dose deposition kernels. In the iterative annealing procedure, beam elements are randomly selected and beam weighting distributions are sampled and used to perturb the selected elements. Perturbations are accepted or rejected according to standard simulated annealing criteria. The result (after the algorithm has terminated due to meeting an iteration or optimisation specification) is an approximate solution for the beam weight vector (w) specified by the above equation. This technique has been applied for several sample dose distributions and phase space restrictions. An example is given of the phase space obtained when endeavouring to conform to a rectangular 100% dose region with polyenergetic though normally incident electrons. For regular distributions, intuitive conclusions regarding the benefits of energy/angular manipulation may be made, whereas for complex distributions, variations in intensity over beam elements of varying energy and

  2. Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Azadeh Jafari

    2014-07-01

    Full Text Available We have reviewed the deposition of titanium nitride (TiN thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD, atomic force microscope (AFM, field emission scanning electron microscopy (FESEM, and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

  3. Annealing effects on resistivity and Hall coefficient of neutron irradiated silicon

    International Nuclear Information System (INIS)

    Biggeri, U.

    1995-01-01

    High Temperature Annealing (HTA) treatment has been carried out on fast-neutron irradiated silicon samples with temperatures up to 300 C. Fluences of irradiation up to 1x10 14 n/cm 2 were used. Before annealing, samples irradiated with fluences higher than 1x10 13 n/cm 2 suffered the type conductivity inversion from n-type to p-type. The changes in the resisitivity and Hall coefficient during each annealing step have been measured by Hall effect analysis. Results indicate the possible creation of acceptors for low temperature annealing up to 150 C and the phosphorous release by E centres at annealing temperatures among 150 C and 200 C. Heating samples up to 300 C allows the recovering of the sample resistivity to its value before irradiation, with the peculiarity that bulks inverted to p-type after irradiation does not come back to n-type after annealing. (orig.)

  4. High annealing temperature induced rapid grain coarsening for efficient perovskite solar cells.

    Science.gov (United States)

    Cao, Xiaobing; Zhi, Lili; Jia, Yi; Li, Yahui; Cui, Xian; Zhao, Ke; Ci, Lijie; Ding, Kongxian; Wei, Jinquan

    2018-08-15

    Thermal annealing plays multiple roles in fabricating high quality perovskite films. Generally, it might result in large perovskite grains by elevating annealing temperature, but might also lead to decomposition of perovskite. Here, we study the effects of annealing temperature on the coarsening of perovskite grains in a temperature range from 100 to 250 °C, and find that the coarsening rate of the perovskite grain increase significantly with the annealing temperature. Compared with the perovskite films annealed at 100 °C, high quality perovskite films with large columnar grains are obtained by annealing perovskite precursor films at 250 °C for only 10 s. As a result, the power conversion efficiency of best solar cell increased from 12.35% to 16.35% due to its low recombination rate and high efficient charge transportation in solar cells. Copyright © 2018. Published by Elsevier Inc.

  5. A determination of the benefits of annealing irradiated pressure vessel weldments

    International Nuclear Information System (INIS)

    Lott, R.G.; Mager, T.R.

    1988-01-01

    The long-term benefit of annealing an irradiated reactor pressure vessel steel may be described in terms of a benefit factor, B. The benefit factor compares the mechanical properties of an annealed and reirradiated specimen with an equivalent specimen having no intermediate anneal. The benefit factor was determined using a series of microhardness specimens prepared from nuclear pressure vessel surveillance program materials. These specimens were annealed and then reirradiated in a test reactor. There was an obvious long-term benefit in the specimens annealed at 450 0 C. The long-term benefit was less obvious at 400 0 C and no significant benefit was noted at 350 0 C. The benefit factor may also be used as the basis of a surveillance program for an annealed pressure vessel. A strategy for such a surveillance program is described. (author)

  6. Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1,100 C

    International Nuclear Information System (INIS)

    Zolper, J.C.; Han, J.; Biefeld, R.M.

    1997-01-01

    The activation annealing of Si-implanted GaN is reported for temperatures from 1,100 to 1,400 C. Although previous work has shown that Si-implanted GaN can be activated by a rapid thermal annealing at ∼1,100 C, it was also shown that significant damage remained in the crystal. Therefore, both AlN-encapsulated and uncapped Si-implanted GaN samples were annealed in a metal organic chemical vapor deposition system in a N 2 /NH 3 ambient to further assess the annealing process. Electrical Hall characterization shows increases in carrier density and mobility for annealing up to 1,300 C before degrading at 1,400 C due to decomposition of the GaN epilayer. Rutherford backscattering spectra show that the high annealing temperatures reduce the implantation induced damage profile but do not completely restore the as-grown crystallinity

  7. Effects of surface polishing and annealing on the optical conductivity of intermetallic compounds

    CERN Document Server

    Rhee, J Y

    1999-01-01

    The optical conductivity spectra of several intermetallic compounds were measured by spectroscopic ellipsometry. Three spectra were measured for each compound; just after the sample was mechanically polished, at high temperature, and after the sample was annealed at 110 .deg. C for at least one day and cooled to room temperature. An equiatomic FeTi alloy showed the typical effects of annealing after mechanical polishing of surface. The spectrum after annealing had a larger magnitude and sharper structures than the spectrum before annealing. We also observed shifts of peaks in the spectrum. A relatively low-temperature annealing gave rise to unexpectedly substantial effects, and the effects were explained by recrystallization and/or a disorder -> order transition of the surface of the sample which was damaged and, hence, became highly disordered by mechanical polishing. Similar effects were also observed when the sample temperature was lowered. The observed changes upon annealing could partly be explained by p...

  8. Considerable improvement in the stability of solution processed small molecule OLED by annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mao Guilin [Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an, 710049 (China); Wu Zhaoxin, E-mail: zhaoxinwu@mail.xjtu.edu.cn [Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an, 710049 (China); He Qiang [Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an, 710049 (China); Department of UAV, Wuhan Ordnance Noncommissioned Officers Academy, Wuhan, 430075 (China); Jiao Bo; Xu Guojin; Hou Xun [Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an, 710049 (China); Chen Zhijian; Gong Qihuang [State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing, 100871 (China)

    2011-06-15

    We investigated the annealing effect on solution processed small organic molecule organic films, which were annealed with various conditions. It was found that the densities of the spin-coated (SC) films increased and the surface roughness decreased as the annealing temperature rose. We fabricated corresponding organic light emitting diodes (OLEDs) by spin coating on the same annealing conditions. The solution processed OLEDs show the considerable efficiency and stability, which were prior or equivalent to the vacuum-deposited (VD) counterparts. Our research shows that annealing process plays a key role in prolonging the lifetime of solution processed small molecule OLEDs, and the mechanism for the improvement of the device performance upon annealing was also discussed.

  9. Strain relaxation near high-k/Si interface by post-deposition annealing

    International Nuclear Information System (INIS)

    Emoto, T.; Akimoto, K.; Yoshida, Y.; Ichimiya, A.; Nabatame, T.; Toriumi, A.

    2005-01-01

    We studied the effect of post-deposition annealing on a HfO 2 /Si interface of by extremely asymmetric X-ray diffraction. Comparing the rocking curves before annealing the sample with those of the annealed sample, it is found that an interfacial layer with a density of 3 g/cm 3 grows at the interface between the HfO 2 layer and the substrate during post-deposition annealing. The wavelength dependency of the integrated intensities of the rocking curve for the as-deposited sample fluctuated with the observation position. This fluctuation was suppressed by annealing. From these results we concluded that the strain introduced into the substrate becomes homogeneous by annealing. Moreover, a quantitative estimation of the strain by curve fitting reveals the existence of compressive strain under the HfO 2 layer

  10. Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

    International Nuclear Information System (INIS)

    Shimada, Masashi; Hara, Masanori; Otsuka, Teppei; Oya, Yasuhisa; Hatano, Yuji

    2015-01-01

    Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 10 26 m −2 ) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min −1 up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h

  11. Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

    Science.gov (United States)

    Shimada, Masashi; Hara, Masanori; Otsuka, Teppei; Oya, Yasuhisa; Hatano, Yuji

    2015-08-01

    Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 1026 m-2) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min-1 up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h.

  12. Defect annealing and thermal desorption of deuterium in low dose HFIR neutron-irradiated tungsten

    Energy Technology Data Exchange (ETDEWEB)

    Shimada, Masashi, E-mail: Masashi.Shimada@inl.gov [Fusion Safety Program, Idaho National Laboratory, Idaho Falls, ID (United States); Hara, Masanori [Hydrogen Isotope Research Center, University of Toyama, Toyama (Japan); Otsuka, Teppei [Kyushu University, Interdisciplinary Graduate School of Engineering Science, Higashi-ku, Fukuoka (Japan); Oya, Yasuhisa [Radioscience Research Laboratory, Faculty of Science, Shizuoka University, Shizuoka (Japan); Hatano, Yuji [Hydrogen Isotope Research Center, University of Toyama, Toyama (Japan)

    2015-08-15

    Three tungsten samples irradiated at High Flux Isotope Reactor at Oak Ridge National Laboratory were exposed to deuterium plasma (ion fluence of 1 × 10{sup 26} m{sup −2}) at three different temperatures (100, 200, and 500 °C) in Tritium Plasma Experiment at Idaho National Laboratory. Subsequently, thermal desorption spectroscopy was performed with a ramp rate of 10 °C min{sup −1} up to 900 °C, and the samples were annealed at 900 °C for 0.5 h. These procedures were repeated three times to uncover defect-annealing effects on deuterium retention. The results show that deuterium retention decreases approximately 70% for at 500 °C after each annealing, and radiation damages were not annealed out completely even after the 3rd annealing. TMAP modeling revealed the trap concentration decreases approximately 80% after each annealing at 900 °C for 0.5 h.

  13. Unusual hardening behaviour in heavily cryo-rolled Cu-Al-Zn alloys during annealing treatment

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Y.L. [Faculty of Science, Kunming University of Science and Technology, Kunming 650500 (China); Ren, S.Y. [Ningbo Powerway Alloy Material Co., Ltd, Ningbo 315135 (China); Zeng, S.D. [Yunnan Institute of Measuring and Testing Technology, Kunming 650228 (China); Zhu, X.K., E-mail: xk_zhu@hotmail.com [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650500 (China)

    2016-04-06

    Three nanostructured Cu-Al-Zn alloys were produced via rolling at the liquid nitrogen temperature. The deformed Cu alloys were then annealed at 150–300 °C for 1 h. The two alloys with high solute content and thus with low stacking fault energy exhibit unusual annealing hardening, namely, an increase in hardness and strength and a decrease in tensile elongation after annealing at 150 and 200 °C. From X-ray diffraction (XRD) analysis and microstructural observations by transmission electron microscopy (TEM), it is found that microstrain and dislocation density decrease after annealing at 200 °C because of the recovery of dislocations and the lattice parameter decreases due to solute segregation. Meanwhile, the twin density of the two Cu alloys increases and grain size remains basically unchanged. It is shown that the formation of annealing twins and stacking faults and the segregation of solute atoms may be the main causes of unusual annealing hardening.

  14. Visible light emission from silicon implanted and annealed SiO2layers

    International Nuclear Information System (INIS)

    Ghislotti, G.; Nielsen, B.; Asoka-Kumar, P.; Lynn, K.G.; Di Mauro, L.F.; Bottani, C.E.; Corni, F.; Tonini, R.; Ottaviani, G.P.

    1997-01-01

    Silicon implanted and annealed SiO 2 layers are studied using photoluminescence (PL) and positron annihilation spectroscopy (PAS). Two PL emission bands are observed. A band centered at 560 nm is present in as-implanted samples and it is still observed after 1,000 C annealing. The emission time is fast. A second band centered at 780 nm is detected after 1,000 C annealing. The intensity of the 780 nm band further increased when hydrogen annealing was performed. The emission time is long (1 micros to 0.2 ms). PAS results show that defects produced by implantation anneal at 600 C. Based on the annealing behavior and on the emission times, the origin of the two bands is discussed

  15. Annealing effect on the microstructure and magnetic properties of 14%Cr-ODS ferritic steel

    International Nuclear Information System (INIS)

    Ding, H.L.; Gao, R.; Zhang, T.; Wang, X.P.; Fang, Q.F.; Liu, C.S.

    2015-01-01

    Graphical abstract: TEM images of microstructure for 14%Cr-ODS ferritic steel annealed for 2 h at different temperatures: (a) 600 °C, (b) 800 °C, (c) 950 °C, and (d) 1150 °C, and the evolution trends of coercivity field (H_C) and Vickers microhardness for samples annealed at above temperatures for 2 h and 50 h. - Highlights: • The thermal stability of annealed 14%Cr-ODS ferritic steel was investigated. • The particle size keeps fairly constant with increasing annealing temperature. • The grain size is still 2–4 μm even after annealing for 50 h at 1150 °C. • The hardness and H_C are almost unchanged after annealing from 800 °C to 1150 °C. - Abstract: The microstructure and magnetic properties of the 14%Cr oxide dispersion strengthened (ODS) ferritic steel fabricated by sol–gel and HIP method were investigated by annealing in vacuum for 2 h (at 300, 600, 800, 950 and 1150 °C) and 50 h (at 600, 800, 950 and 1150 °C). Microstructure analysis shows that as the annealing temperature increases, the size of oxide nanoparticles becomes smaller and their dispersion in matrix becomes more homogeneous. Grain size remains stable when the annealing temperature is below 800 °C, while above 800 °C, grain size grows with the increasing annealing temperature and time. The Vickers microhardness and coercivity (H_C) display almost similar evolution trend with annealing temperature for 2 h and 50 h. No obvious recrystallization appears after 1150 °C annealing, which indicates the high microstructural stability of 14%Cr-ODS ferritic steel. The possible mechanism for above behaviors is discussed in this paper.

  16. Effect of pressure on the radiation annealing of recoil atoms in chromates

    International Nuclear Information System (INIS)

    Stamouli, M.I.

    1986-01-01

    The effect of pressure on the annealing of recoil atoms by gamma radiation in neutron irradiated potassium chromate, ammonium chromate and ammonium dichromate was studied. In potassium chromate the pressure applied before the gamma-irradiation was found to retard the radiation annealing process. In ammonium chromate and ammonium dichromate the radiation annealing was found to be enhanced in the compressed samples in comparison to the noncompressed ones. (author)

  17. Laser-annealed GaP OHMIC contacts for high-temperature devices

    International Nuclear Information System (INIS)

    Eknoyan, O.; Van der Hoeven, W.; Richardson, T.; Porter, W.A.; Coquat, J.A.

    1980-01-01

    The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. Aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones

  18. Low-temperature annealing of radiation defects in electron-irradiated gallium phosphide

    International Nuclear Information System (INIS)

    Kolb, A.A.; Megela, I.G.; Buturlakin, A.P.; Goyer, D.B.

    1990-01-01

    The isochronal annealing of radiation defects in high-energy electron irradiated n-GaP monocrystals within the 77 to 300 K range has been investigated by optical and electrical techniques. The changes in conductance and charge carrier mobility as functions of annealing temperature as well as the variation of optical absorption spectra of GaP under irradiation and annealing provide evidence that most of radiation defects are likely secondary complexes of defects

  19. On the correlation between annealing and variabilities in pulsed-luminescence from quartz

    International Nuclear Information System (INIS)

    Chithambo, M.L.

    2006-01-01

    Properties of luminescence lifetimes in quartz related to annealing between 500 and 900 deg. C have been investigated. The luminescence was pulse-stimulated at 470nm from sets of granular quartz annealed at 500, 600, 700, 800, and 900 deg. C. The lifetimes decrease with annealing temperature from about 42 to 33μs when the annealing temperature is increased from 500 to 900 deg. C. Luminescence lifetimes are most sensitive to duration of annealing at 600 deg. C, decreasing from 40.2+/-0.7μs by as much as 7μs when the duration of annealing is changed from 10 to 60min. However, at 800-900 deg. C lifetimes are essentially independent of annealing temperature at about 33μs. Increasing the exciting beta dose causes an increase in the lifetimes of the stimulated luminescence in the sample annealed at 800 deg. C but not in those annealed at either 500 or 600 deg. C. The temperature-resolved distribution of luminescence lifetimes is affected by thermal quenching of luminescence. These features may be accounted for with reference to two principal luminescence centres involved in the luminescence emission process

  20. Electrical and structural characterization of as-grown and annealed hydrothermal bulk ZnO

    International Nuclear Information System (INIS)

    Kassier, G. H.; Hayes, M.; Auret, F. D.; Mamor, M.; Bouziane, K.

    2007-01-01

    Hall effect measurements in the range 20-370 K on as-grown and annealed hydrothermal bulk ZnO have been performed. The bulk conductivity in the highly resistive as-grown sample was found to decrease and then increase after annealing at 550 deg. C and 930 deg. C, respectively. The conduction in the as-grown material is attributed to a deep donor which is replaced by a much shallower donor after annealing at 930 deg. C. Annealing at both temperatures also produced strong surface conduction effects. Nondegenerate low-mobility surface conduction dominated the electrical properties of the sample annealed at 550 deg. C, while a degenerate surface channel was formed after annealing at 930 deg. C. In addition, Rutherford backscattering and channeling spectrometry (RBS/C) was used to assess the effect of annealing on the crystalline quality of the samples. RBS/C measurements reveal that annealing at 930 deg. C leads to significant improvement of the crystalline quality of the material, while annealing at 550 deg. C results in the segregation of a nonchanneling impurity at the surface

  1. On the analysis of the activation mechanisms of sub-melt laser anneals

    DEFF Research Database (Denmark)

    Clarysse, T.; Bogdanowicz, J.; Goosens, J.

    2008-01-01

    electrically active concentration level as well as the concurrent mobility is dependent on the dopant concentration level. This implies that the activation of B through the laser anneal process in the explored temperature–time space is governed by kinetic processes (i.e. the dissolution of B–I pairs......In order to fabricate carrier profiles with a junction depth (15 nm) and sheet resistance value suited for sub-32 nm Si-CMOS technology, the usage of sub-melt laser anneal is a promising route to explore. As laser annealed junctions seem to outperform standard anneal approaches, a detailed......) and not by the (temperature related) solid solubility....

  2. Transformation of point defects under annealing of neutron-irradiated Si and Si:Ge

    International Nuclear Information System (INIS)

    Pomozov, Yu.V.; Khirunenko, L.I.; Shakhovtsev, V.I.; Yashnik, V.I.

    1990-01-01

    Transformation of point radiation defects under isochronous annealing of neurton-irradaited Si and Si:Ge is studied. It is determined, that occurence of several new centers which produce A-centre range absorption bands is observed at annealing within 423-493 K temperature range. It is shown that vacancy and oxygen are included in the centers composition. It is found that VO centre transformation into VO 2 at annealing occurs via intermediate stage in contrast to that occuring in electron-irradiated crystals via VO direct diffusion to interstitial oxygen. Transformation of centers under Si ansd Si:Ge annealing occurs similarly

  3. Optical annealing of CaF2:Mn for cooled optically stimulated luminescence

    International Nuclear Information System (INIS)

    Miller, S.D.; Stahl, K.A.; Endres, G.W.R.; McDonald, J.C.

    1989-01-01

    Optical annealing of the cooled optically stimulated luminescence in CaF 2 :Mn at room temperature has been demonstrated. The laser of choice for optical annealing of CaF 2 : Mn is a 326 nm helium-cadmium ultraviolet laser. A complete cycle of readout and annealing of the CaF 2 :Mn cooled optically stimulated dosemeters can now be accomplished without heating the dosemeters above room temperature. This annealing work represents the next step toward creating a proton-recoil-based fast neutron dosimetry system based on the cooled optically stimulated luminescence technique. (author)

  4. Annealing and etching effects on strain and stress sensitivity of polymer optical fibre Bragg grating sensors

    DEFF Research Database (Denmark)

    Pospori, A.; Marques, C. A.F.; Sáez-Rodríguez, D.

    2017-01-01

    Thermal annealing and chemical etching effects on the strain and stress sensitivity of polymer optical fibre based sensors are investigated. Bragg grating sensors have been photo-inscribed in PMMA optical fibre and their strain and stress sensitivity has been characterised before and after any...... annealing or etching process. The annealing and etching processes have been tried in different sequence in order to investigate their impact on the sensor's performance. Results show with high confidence that fibre annealing can improve both strain and stress sensitivities. The fibre etching can also...... provide stress sensitivity enhancement, however the strain sensitivity changes seems to be random....

  5. Modeling of irradiation embrittlement and annealing/recovery in pressure vessel steels

    International Nuclear Information System (INIS)

    Lott, R.G.; Freyer, P.D.

    1996-01-01

    The results of reactor pressure vessel (RPV) annealing studies are interpreted in light of the current understanding of radiation embrittlement phenomena in RPV steels. An extensive RPV irradiation embrittlement and annealing database has been compiled and the data reveal that the majority of annealing studies completed to date have employed test reactor irradiated weldments. Although test reactor and power reactor irradiations result in similar embrittlement trends, subtle differences between these two damage states can become important in the interpretation of annealing results. Microstructural studies of irradiated steels suggest that there are several different irradiation-induced microstructural features that contribute to embrittlement. The amount of annealing recovery and the post-anneal re-embrittlement behavior of a steel are determined by the annealing response of these microstructural defects. The active embrittlement mechanisms are determined largely by the irradiation temperature and the material composition. Interpretation and thorough understanding of annealing results require a model that considers the underlying physical mechanisms of embrittlement. This paper presents a framework for the construction of a physically based mechanistic model of irradiation embrittlement and annealing behavior

  6. Low temperature thermal annealing in fast neutron-irradiated potassium permanganate

    Energy Technology Data Exchange (ETDEWEB)

    Owens, C W; Lecington, W C [New Hampshire Univ., Durham (USA). Dept. of Chemistry

    1975-01-01

    The effect of thermal annealing on the retention of recoil /sup 54/Mn as permanganate in crystalline KMnO/sub 4/ irradiated with fast neutrons at liquid nitrogen temperature has been studied. The retention after 4 hrs of annealing increases from about 8% at -196/sup 0/ to a maximum of 61% at 180/sup 0/, then decreases at higher temperatures. A single activation energy (approximately 0.01 eV) applies to the thermal annealing process between -196/sup 0/ and -40/sup 0/. Extrapolation of the data suggests that below -229/sup 0/ no thermal annealing would occur.

  7. The effect of annealing and desulfurization on oxide spallation of turbine airfoil material

    International Nuclear Information System (INIS)

    Briant, C.L.; Murphy, W.H.; Schaeffer, J.C.

    1995-01-01

    In this paper the authors report a study that addresses the sulfur-induced spallation theory. Previous work has shown that a high temperature anneal in hydrogen desulfurizes nickel-base alloys and greatly improves their resistance to oxide spallation. The authors will show that such an anneal can be applied successfully to a Ni-base airfoil material. Both Auger segregation experiments and chemical analyses show that this anneal desulfurizes the material, at least in the absence of yttrium. However, the results suggest that factors other than desulfurization may be contributing to the improvement in spallation resistance produced by the anneal

  8. Effect of high temperature annealing on defects and optical properties of ZnO single crystals

    International Nuclear Information System (INIS)

    Jiang, M.; Wang, D.D.; Zou, B.; Chen, Z.Q.; Kawasuso, A.; Sekiguchi, T.

    2012-01-01

    Hydrothermal grown ZnO single crystals were annealed in N 2 or O 2 between 900 and 1300 C. Positron lifetime measurements reveal a single lifetime in all the ZnO samples before and after annealing. The positron lifetime is about 181 ps after annealing at 900 C in either N 2 or O 2 atmosphere. However, increase of the positron lifetime is observed after further annealing the sample at higher temperatures up to 1300 C, and it has a faster increase in O 2 ambient. Temperature dependence measurements show that the positron lifetime has very slight increase with temperature for the 900 C annealed sample, while it shows notable variation for the sample annealed at 1300 C. This implied that annealing at high temperature introduces additional defects. These defects are supposed to be Zn vacancy-related defects. Cathodoluminescence (CL) measurements indicates enhancement of both UV and green emission after annealing, and the enhancement of green emission is much stronger for the samples annealed in O 2 ambient. The possible origin of green emission is tentatively discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Defect studies in annealed ZnO by positron annihilation spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sanyal, D; Roy, Tapatee Kundu; Chakrabarti, Mahuya; Dechoudhury, Siddhartha; Bhowmick, Debasis; Chakrabarti, Alok [Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700064 (India)

    2008-01-30

    Coincidence Doppler broadening of the positron annihilation technique has been employed to identify the defects in thermally annealed 'as-received' ZnO and thermally annealed ball-milled nanocrystalline ZnO. Results indicate that a significant amount of oxygen vacancy has been created in ZnO due to annealing at about 500 deg. C and above. The results also indicate that the Zn vacancy created during the ball milling process can be easily removed by annealing the sample at about 500 deg. C and above. The defect characterization has also been correlated with the magnetic properties of ZnO.

  10. Defect studies in annealed ZnO by positron annihilation spectroscopy

    International Nuclear Information System (INIS)

    Sanyal, D; Roy, Tapatee Kundu; Chakrabarti, Mahuya; Dechoudhury, Siddhartha; Bhowmick, Debasis; Chakrabarti, Alok

    2008-01-01

    Coincidence Doppler broadening of the positron annihilation technique has been employed to identify the defects in thermally annealed 'as-received' ZnO and thermally annealed ball-milled nanocrystalline ZnO. Results indicate that a significant amount of oxygen vacancy has been created in ZnO due to annealing at about 500 deg. C and above. The results also indicate that the Zn vacancy created during the ball milling process can be easily removed by annealing the sample at about 500 deg. C and above. The defect characterization has also been correlated with the magnetic properties of ZnO

  11. The influence of strain on annealing behaviour of heavily rolled aluminium AA1050

    DEFF Research Database (Denmark)

    Mishin, Oleg; Juul Jensen, Dorte; Hansen, Niels

    2012-01-01

    Deformation structures and annealing behaviour have been analysed in the centre layer of two AA1050 samples cold-rolled to von Mises strains of 3.6 and 6.4. During annealing at 270-300°C structural coarsening and discontinuous recrystallization occurred in both samples. In the coarsened microstru......Deformation structures and annealing behaviour have been analysed in the centre layer of two AA1050 samples cold-rolled to von Mises strains of 3.6 and 6.4. During annealing at 270-300°C structural coarsening and discontinuous recrystallization occurred in both samples. In the coarsened...

  12. Improving ion irradiated high Tc Josephson junctions by annealing: The role of vacancy-interstitial annihilation

    International Nuclear Information System (INIS)

    Sirena, M.; Matzen, S.; Bergeal, N.; Lesueur, J.; Faini, G.; Bernard, R.; Briatico, J.; Crete, D. G.

    2007-01-01

    The authors have studied the annealing effect in the transport properties of high T c Josephson junctions (JJs) made by ion irradiation. Low temperature annealing (80 deg. C) increases the JJ coupling temperature (T J ) and the I c R n product, where I c is the critical current and R n the normal resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one

  13. Annealing of defects in indium antimonide after ion bombardment

    International Nuclear Information System (INIS)

    Bogatyrev, V.A.; Kachurin, G.A.

    1977-01-01

    Indium antimonide electric properties are investigated after ion bombardment of different mass (with energy of 60 and 300 keV) and isochrone annealing in the 20-450 deg C temperature range. It is shown that 100-150 deg C n- type stable layers are formed after proton irradiation at room temperature only. Indium antimonide exposure by average mass ions under the same conditions and also by helium ions of 300 keV energy brings to p-type layer formation with high hole concentration. Subsequent heating at the temperature over 150 deg C results in electron conductivity of irradiated layers. Electron volume density and mobility efficiency reaches 10 18 cm -3 and 10 4 cm 2 /Vs respectively. N-type formed layers are stable up to 350 deg C allowing its usage for n-p transition formation admitting thermal treatment. Analysis is given of defect behaviour peculiarities depending upon the irradiation and annealing conditions. Hole conductivity in irradiated indium antimonide is supposed to be stipulated by regions of disorder, while electron conductivity - by relatively simpler disorders

  14. Coupled Qubits for Next Generation Quantum Annealing: Novel Interactions

    Science.gov (United States)

    Samach, Gabriel; Weber, Steven; Hover, David; Rosenberg, Danna; Yoder, Jonilyn; Kim, David; Oliver, William D.; Kerman, Andrew J.

    While the first generation of quantum annealers based on Josephson junction technology have been successfully engineered to represent arrays of spins in the quantum transverse-field Ising model, no circuit architecture to date has succeeded in emulating the more complicated non-stoquastic Hamiltonians of interest for next generation quantum annealing. Here, we present our recent results for tunable ZZ- and XX-coupling between high coherence superconducting flux qubits. We discuss the larger architectures these coupled two-qubit building blocks will enable, as well as comment on the limitations of such architectures. This research was funded by the Office of the Director of National Intelligence (ODNI), Intelligence Advanced Research Projects Activity (IARPA) and by the Assistant Secretary of Defense for Research & Engineering under Air Force Contract No. FA8721-05-C-0002. The views and conclusions contained herein are those of the authors and should not be interpreted as necessarily representing the official policies or endorsements, either expressed or implied, of ODNI, IARPA, or the US Government.

  15. Evaluation of trapping parameters of annealed natural quartz

    International Nuclear Information System (INIS)

    Zhou, Rui; Wei, Ming-Jian; Song, Bo; Zhang, Yan; Zhao, Qiu-Yue; Pan, Bao-Lin; Li, Teng-Fei

    2016-01-01

    The thermoluminescence (TL) trapping parameters of annealed quartz have been investigated. The apparent TL peaks observed at temperatures of 133 °C, 211 °C, 266 °C and 405 °C, respectively, were named Peak I, Peak II, Peak III and Peak IV. The T_m − T_s_t_o_p method is applied to investigate the number of peaks and their positions, and to obtain the trap distributions in the quartz. Peak shape (PS), Hoogenstraaten method (Various Heating Rates Method, VHR), and Computerized Glow Curve Deconvolution (CGCD) are used to evaluate the trapping parameters of the annealed quartz. The glow curve can be considered as a superposition of at least nine overlapping peaks. These peaks show up at 133 °C, 211 °C, 266 °C, 308 °C, 333 °C, 384 °C, 441 °C, 466 °C and 484 °C. The PS method can be only used in evaluating the parameters for Peaks I. The VHR method can be used in evaluating the trapping parameters for the first three peaks. CGCD method is complementary to obtaining parameters for the sub-peaks, and the thermal quenching correction with the Urbach’s method is necessary. The Urbach’s coefficient for the quartz is 30.03 kT_m.

  16. Manufacture of Radio Frequency Micromachined Switches with Annealing

    Directory of Open Access Journals (Sweden)

    Cheng-Yang Lin

    2014-01-01

    Full Text Available The fabrication and characterization of a radio frequency (RF micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

  17. Manufacture of radio frequency micromachined switches with annealing.

    Science.gov (United States)

    Lin, Cheng-Yang; Dai, Ching-Liang

    2014-01-17

    The fabrication and characterization of a radio frequency (RF) micromachined switch with annealing were presented. The structure of the RF switch consists of a membrane, coplanar waveguide (CPW) lines, and eight springs. The RF switch is manufactured using the complementary metal oxide semiconductor (CMOS) process. The switch requires a post-process to release the membrane and springs. The post-process uses a wet etching to remove the sacrificial silicon dioxide layer, and to obtain the suspended structures of the switch. In order to improve the residual stress of the switch, an annealing process is applied to the switch, and the membrane obtains an excellent flatness. The finite element method (FEM) software CoventorWare is utilized to simulate the stress and displacement of the RF switch. Experimental results show that the RF switch has an insertion loss of 0.9 dB at 35 GHz and an isolation of 21 dB at 39 GHz. The actuation voltage of the switch is 14 V.

  18. Simulated Annealing-Based Krill Herd Algorithm for Global Optimization

    Directory of Open Access Journals (Sweden)

    Gai-Ge Wang

    2013-01-01

    Full Text Available Recently, Gandomi and Alavi proposed a novel swarm intelligent method, called krill herd (KH, for global optimization. To enhance the performance of the KH method, in this paper, a new improved meta-heuristic simulated annealing-based krill herd (SKH method is proposed for optimization tasks. A new krill selecting (KS operator is used to refine krill behavior when updating krill’s position so as to enhance its reliability and robustness dealing with optimization problems. The introduced KS operator involves greedy strategy and accepting few not-so-good solutions with a low probability originally used in simulated annealing (SA. In addition, a kind of elitism scheme is used to save the best individuals in the population in the process of the krill updating. The merits of these improvements are verified by fourteen standard benchmarking functions and experimental results show that, in most cases, the performance of this improved meta-heuristic SKH method is superior to, or at least highly competitive with, the standard KH and other optimization methods.

  19. Fast assembly of ordered block copolymer nanostructures through microwave annealing.

    Science.gov (United States)

    Zhang, Xiaojiang; Harris, Kenneth D; Wu, Nathanael L Y; Murphy, Jeffrey N; Buriak, Jillian M

    2010-11-23

    Block copolymer self-assembly is an innovative technology capable of patterning technologically relevant substrates with nanoscale precision for a range of applications from integrated circuit fabrication to tissue interfacing, for example. In this article, we demonstrate a microwave-based method of rapidly inducing order in block copolymer structures. The technique involves the usage of a commercial microwave reactor to anneal block copolymer films in the presence of appropriate solvents, and we explore the effect of various parameters over the polymer assembly speed and defect density. The approach is applied to the commonly used poly(styrene)-b-poly(methyl methacrylate) (PS-b-PMMA) and poly(styrene)-b-poly(2-vinylpyridine) (PS-b-P2VP) families of block copolymers, and it is found that the substrate resistivity, solvent environment, and anneal temperature all critically influence the self-assembly process. For selected systems, highly ordered patterns were achieved in less than 3 min. In addition, we establish the compatibility of the technique with directed assembly by graphoepitaxy.

  20. Microplastic processes developed in pure Ag with mesoscale annealing twins

    International Nuclear Information System (INIS)

    Al-Fadhalah, Khaled Jabr Hasan; Li, Chun-Ming; Beaudoin, A.J.; Korzekwa, D.A.; Robertson, I.M.

    2008-01-01

    The impact of annealing twin boundaries with a high residual defect content on the mechanical response of polycrystalline fine- and coarse-grained (2 and 20 μm) silver was investigated through transmission electron microscopy and modeling. Besides an increase in the yield strength, the fine-grained material exhibited an inflection in the stress-strain curve after initial yield. Static and dynamic TEM studies revealed that the annealing twin boundaries acted as sources of perfect dislocations, partial dislocations and deformation twins; as barriers to the propagation of these dislocations; and as annihilation sites for dislocations. With increasing strain and as the twin boundaries were penetrated by dislocations, they contributed less to the overall mechanical properties. Based on these observations, equations for the evolution of mobile and forest dislocation densities are posed, depicting boundary sources and dislocation-dislocation interactions, respectively. The deformation response is modeled by computing the aggregate response of matrix-twin composite grains in the viscoplastic self-consistent scheme, which permits consideration of compatibility and equilibrium requirements across the twin boundaries. This work highlights the significant role boundaries play in generating the dislocations that control the macroscopic mechanical response

  1. Enhanced regeneration of degraded polymer solar cells by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Pankaj, E-mail: pankaj@mail.nplindia.ernet.in [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308 (Australia); Bilen, Chhinder; Zhou, Xiaojing; Belcher, Warwick J.; Dastoor, Paul C., E-mail: Paul.Dastoor@newcastle.edu.au [Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308 (Australia); Feron, Krishna [Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308 (Australia); CSIRO Energy Technology, P. O. Box 330, Newcastle NSW 2300 (Australia)

    2014-05-12

    The degradation and thermal regeneration of poly(3-hexylethiophene) (P3HT):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM) and P3HT:indene-C{sub 60} bisadduct (ICBA) polymer solar cells, with Ca/Al and Ca/Ag cathodes and indium tin oxide/poly(ethylene-dioxythiophene):polystyrene sulfonate anode have been investigated. Degradation occurs via a combination of three primary pathways: (1) cathodic oxidation, (2) active layer phase segregation, and (3) anodic diffusion. Fully degraded devices were subjected to thermal annealing under inert atmosphere. Degraded solar cells possessing Ca/Ag electrodes were observed to regenerate their performance, whereas solar cells having Ca/Al electrodes exhibited no significant regeneration of device characteristics after thermal annealing. Moreover, the solar cells with a P3HT:ICBA active layer exhibited enhanced regeneration compared to P3HT:PCBM active layer devices as a result of reduced changes to the active layer morphology. Devices combining a Ca/Ag cathode and P3HT:ICBA active layer demonstrated ∼50% performance restoration over several degradation/regeneration cycles.

  2. Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs

    International Nuclear Information System (INIS)

    Jaksic, A.B.; Pejovic, M.M.; Ristic, G.S.

    1999-01-01

    The paper presents results of isothermal and isochronal annealing experiments on several types of gamma-ray irradiated commercial N- and P-channel power VDMOSFETs. Transistors were characterized for their threshold voltage shift and densities of radiation-induced oxide-trap charge and interface traps. The results show that the temperature enhances interface trap formation and oxide-trap charge decay rates, but also contributes to the passivation of interface traps. The study demonstrates that formation and passivation of interface traps are simultaneous processes. At certain conditions (lower temperature and/or positive bias) interface-trap formation dominates. Oppositely, at other conditions (higher temperature and/or negative bias) passivation is predominant. However at some conditions there is a complex interplay between formation and passivation of interface traps, resulting in interface traps increase followed by decrease at later annealing times. No model for interface trap post-irradiation behavior can explain this effect better than the recently proposed H-W model

  3. Evaluation of trapping parameters of annealed natural quartz

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Rui [College of Resources, Environment & Tourism, Capital Normal University, 100048 Beijing (China); Shisanling Seismic Station, Institute of Earthquake Science, CEA, 102200 Beijing (China); Wei, Ming-Jian, E-mail: weimj@cnu.edu.cn [College of Resources, Environment & Tourism, Capital Normal University, 100048 Beijing (China); Song, Bo [College of Resources, Environment & Tourism, Capital Normal University, 100048 Beijing (China); Beijing Jing Yuan School, 100040 Beijing (China); Zhang, Yan [College of Resources, Environment & Tourism, Capital Normal University, 100048 Beijing (China); School of TaiPingqiao, Nan Lu of West Railway Station, 100073 Beijing (China); Zhao, Qiu-Yue [Key Laboratory of Tourism and Resources Environment in Universities of Shandong, Taishan University, 271000 Tai’an (China); Pan, Bao-Lin; Li, Teng-Fei [College of Resources, Environment & Tourism, Capital Normal University, 100048 Beijing (China)

    2016-05-15

    The thermoluminescence (TL) trapping parameters of annealed quartz have been investigated. The apparent TL peaks observed at temperatures of 133 °C, 211 °C, 266 °C and 405 °C, respectively, were named Peak I, Peak II, Peak III and Peak IV. The T{sub m} − T{sub stop} method is applied to investigate the number of peaks and their positions, and to obtain the trap distributions in the quartz. Peak shape (PS), Hoogenstraaten method (Various Heating Rates Method, VHR), and Computerized Glow Curve Deconvolution (CGCD) are used to evaluate the trapping parameters of the annealed quartz. The glow curve can be considered as a superposition of at least nine overlapping peaks. These peaks show up at 133 °C, 211 °C, 266 °C, 308 °C, 333 °C, 384 °C, 441 °C, 466 °C and 484 °C. The PS method can be only used in evaluating the parameters for Peaks I. The VHR method can be used in evaluating the trapping parameters for the first three peaks. CGCD method is complementary to obtaining parameters for the sub-peaks, and the thermal quenching correction with the Urbach’s method is necessary. The Urbach’s coefficient for the quartz is 30.03 kT{sub m}.

  4. Microplastic processes developed in pure Ag with mesoscale annealing twins

    Energy Technology Data Exchange (ETDEWEB)

    Al-Fadhalah, Khaled Jabr Hasan [Mechanical Engineering Department, College of Engineering and Petroleum, Kuwait University, P.O. Box 5969, Safat 13060 (Kuwait)], E-mail: fadhalah@kuc01.kuniv.edu.kw; Li, Chun-Ming [Alcan Rolled Products-Ravenswood, LLC. P.O. Box 68, Century Road, Ravenswood, WV 26164 (United States)], E-mail: chun-ming.li@alcan.com; Beaudoin, A.J. [Department of Mechanical Science and Engineering, University of Illinois, 1206 West Green Street, Urbana, IL 61801 (United States)], E-mail: abeaudoi@uiuc.edu; Korzekwa, D.A. [Los Alamos National Laboratory, P.O. Box 1663, Los Alamos, NM 87545 (United States); Robertson, I.M. [Department of Materials Science and Engineering, University of Illinois, 1304 W. Green Street, Urbana, IL 61801 (United States)], E-mail: ianr@uiuc.edu

    2008-11-15

    The impact of annealing twin boundaries with a high residual defect content on the mechanical response of polycrystalline fine- and coarse-grained (2 and 20 {mu}m) silver was investigated through transmission electron microscopy and modeling. Besides an increase in the yield strength, the fine-grained material exhibited an inflection in the stress-strain curve after initial yield. Static and dynamic TEM studies revealed that the annealing twin boundaries acted as sources of perfect dislocations, partial dislocations and deformation twins; as barriers to the propagation of these dislocations; and as annihilation sites for dislocations. With increasing strain and as the twin boundaries were penetrated by dislocations, they contributed less to the overall mechanical properties. Based on these observations, equations for the evolution of mobile and forest dislocation densities are posed, depicting boundary sources and dislocation-dislocation interactions, respectively. The deformation response is modeled by computing the aggregate response of matrix-twin composite grains in the viscoplastic self-consistent scheme, which permits consideration of compatibility and equilibrium requirements across the twin boundaries. This work highlights the significant role boundaries play in generating the dislocations that control the macroscopic mechanical response.

  5. List-Based Simulated Annealing Algorithm for Traveling Salesman Problem

    Directory of Open Access Journals (Sweden)

    Shi-hua Zhan

    2016-01-01

    Full Text Available Simulated annealing (SA algorithm is a popular intelligent optimization algorithm which has been successfully applied in many fields. Parameters’ setting is a key factor for its performance, but it is also a tedious work. To simplify parameters setting, we present a list-based simulated annealing (LBSA algorithm to solve traveling salesman problem (TSP. LBSA algorithm uses a novel list-based cooling schedule to control the decrease of temperature. Specifically, a list of temperatures is created first, and then the maximum temperature in list is used by Metropolis acceptance criterion to decide whether to accept a candidate solution. The temperature list is adapted iteratively according to the topology of the solution space of the problem. The effectiveness and the parameter sensitivity of the list-based cooling schedule are illustrated through benchmark TSP problems. The LBSA algorithm, whose performance is robust on a wide range of parameter values, shows competitive performance compared with some other state-of-the-art algorithms.

  6. Enhanced regeneration of degraded polymer solar cells by thermal annealing

    International Nuclear Information System (INIS)

    Kumar, Pankaj; Bilen, Chhinder; Zhou, Xiaojing; Belcher, Warwick J.; Dastoor, Paul C.; Feron, Krishna

    2014-01-01

    The degradation and thermal regeneration of poly(3-hexylethiophene) (P3HT):[6,6]-phenyl-C 61 -butyric acid methyl ester (PCBM) and P3HT:indene-C 60 bisadduct (ICBA) polymer solar cells, with Ca/Al and Ca/Ag cathodes and indium tin oxide/poly(ethylene-dioxythiophene):polystyrene sulfonate anode have been investigated. Degradation occurs via a combination of three primary pathways: (1) cathodic oxidation, (2) active layer phase segregation, and (3) anodic diffusion. Fully degraded devices were subjected to thermal annealing under inert atmosphere. Degraded solar cells possessing Ca/Ag electrodes were observed to regenerate their performance, whereas solar cells having Ca/Al electrodes exhibited no significant regeneration of device characteristics after thermal annealing. Moreover, the solar cells with a P3HT:ICBA active layer exhibited enhanced regeneration compared to P3HT:PCBM active layer devices as a result of reduced changes to the active layer morphology. Devices combining a Ca/Ag cathode and P3HT:ICBA active layer demonstrated ∼50% performance restoration over several degradation/regeneration cycles

  7. Laser microstructuring and annealing processes for lithium manganese oxide cathodes

    International Nuclear Information System (INIS)

    Proell, J.; Kohler, R.; Torge, M.; Ulrich, S.; Ziebert, C.; Bruns, M.; Seifert, H.J.; Pfleging, W.

    2011-01-01

    It is expected that cathodes for lithium-ion batteries (LIB) composed out of nano-composite materials lead to an increase in power density of the LIB due to large electrochemically active surface areas but cathodes made of lithium manganese oxides (Li-Mn-O) suffer from structural instabilities due to their sensitivity to the average manganese oxidation state. Therefore, thin films in the Li-Mn-O system were synthesized by non-reactive radiofrequency magnetron sputtering of a spinel lithium manganese oxide target. For the enhancement of the power density and cycle stability, large area direct laser patterning using UV-laser radiation with a wavelength of 248 nm was performed. Subsequent laser annealing processes were investigated in a second step in order to set up a spinel-like phase using 940 nm laser radiation at a temperature of 680 deg. C. The interaction processes between UV-laser radiation and the material was investigated using laser ablation inductively coupled plasma mass spectroscopy. The changes in phase, structure and grain shape of the thin films due to the annealing process were recorded using Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The structured cathodes were cycled using standard electrolyte and a metallic lithium anode. Different surface structures were investigated and a significant increase in cycling stability was found. Surface chemistry of an as-deposited as well as an electrochemically cycled thin film was investigated via X-ray photoelectron spectroscopy.

  8. Boron-enhanced diffusion in excimer laser annealed Si

    International Nuclear Information System (INIS)

    Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.; La Magna, A.; Privitera, V.; Fortunato, G.; Mariucci, L.

    2004-01-01

    The effect of excimer laser annealing (ELA) and rapid thermal annealing (RTA) on B redistribution in B-implanted Si has been studied by secondary ion mass spectrometry (SIMS) and spreading resistance probe (SRP). B has been implanted with an energy of 1 keV and a dose of 10 16 cm -2 forming a distribution with a width of 20-30 nm and a peak concentration of ∼5 x 10 21 cm -3 . It has been found that ELA with 10 pulses of the energy density of 850 mJ/cm 2 results in a uniform B distribution over the ELA-molten region with an abrupt profile edge. SRP measurements demonstrate good activation of the implanted B after ELA, with the concentration of the activated fraction (∼10 21 cm -3 ) exceeding the solid solubility level. RTA (30 s at 1100 deg. C) of the as-implanted and ELA-treated samples leads to a diffusion of B with diffusivities exceeding the equilibrium one and the enhancement is similar for both of the samples. It is also found that RTA decreases the activated B in the ELA-treated sample to the solid solubility limit (2 x 10 20 cm -3 ). The similarity of the B diffusivity for the as-implanted and ELA-treated samples suggests that the enhancement of the B diffusivity is due to the so-called boron-enhanced diffusion (BED). Possible mechanisms of BED are discussed

  9. Effects of different annealing atmospheres on the properties of cadmium sulfide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yücel, E., E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Kahraman, S. [Department of Metallurgy and Material Engineering, Faculty of Technology, Mustafa Kemal University, 31034 Hatay (Turkey); Güder, H.S. [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

    2015-08-15

    Graphical abstract: The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. - Highlights: • Compactness and smoothness of the films were enhanced after sulfur annealing. • Micro-strain values of some films were improved after sulfur annealing. • Dislocation density values of some films were improved after sulfur annealing. • Band gap values of the films were improved after sulfur annealing. - Abstract: Cadmium sulfide (CdS) thin films were prepared on glass substrates by using chemical bath deposition (CBD) technique. The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. Compactness and smoothness of the films (especially for pH 10.5 and 11) enhanced after sulfur annealing. pH value of the precursor solution remarkably affected the roughness, uniformity and particle sizes of the films. Based on the analysis of X-ray diffraction (XRD) patterns of the films, micro-strain and dislocation density values of the sulfur-annealed films (pH 10.5 and 11) were found to be lower than those of air-annealed films. Air-annealed films (pH 10.5, 11 and 11.5) exhibited higher transmittance than sulfur-annealed films in the wavelength region of 550–800 nm. Optical band gap values of the films were found between 2.31 eV and 2.36 eV.

  10. Post-annealing effects on pulsed laser deposition-grown GaN thin films

    International Nuclear Information System (INIS)

    Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

    2015-01-01

    In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

  11. Effect of Annealing on the Thermoluminescence Properties of ZnO Nanophosphor

    Science.gov (United States)

    Kalita, J. M.; Wary, G.

    2017-07-01

    We report the effect of annealing on the thermoluminescence (TL) properties of zinc oxide (ZnO) nanophosphor. The sample was synthesised by a wet chemical process. The characterisation report shows that the size of the grains is within 123.0 nm-160.5 nm. TL measured at 2 K/s from a fresh un-annealed sample irradiated to 60 mGy shows a composite glow curve containing three peaks at 353.2 K, 429.1 K, and 455.3 K. On the other hand, samples annealed at 473 K and 573 K followed by irradiation to 60 mGy do not give TL. However, annealing at 673 K and 773 K followed by irradiation to the same dose produces a glow curve comprising two overlapping peaks at 352.3 K and 370.6 K. In the TL emission spectrum of un-annealed sample, two emission peaks were found in green ( 523 nm) and orange ( 620 nm) regions whereas in annealed samples, only a peak was found in the orange region ( 618 nm). Kinetic analysis shows that the activation energy corresponding to TL peaks at 353.2 K, 429.1 K, and 455.3 K of the un-annealed sample are 0.64 eV, 0.80 eV, and 1.20 eV whereas that of the peaks at 352.3 K and 370.6 K of 673 K and 773 K annealed samples are 0.64 eV and 0.70 eV, respectively. All peaks of un-annealed and annealed samples, except the one at 429.1 K of the un-annealed sample, follow first-order kinetics whereas the peak at 429.1 K follows second-order kinetics. Considering the kinetic and spectral features, an energy band model for ZnO nanophosphor has been proposed.

  12. spsann - optimization of sample patterns using spatial simulated annealing

    Science.gov (United States)

    Samuel-Rosa, Alessandro; Heuvelink, Gerard; Vasques, Gustavo; Anjos, Lúcia

    2015-04-01

    There are many algorithms and computer programs to optimize sample patterns, some private and others publicly available. A few have only been presented in scientific articles and text books. This dispersion and somewhat poor availability is holds back to their wider adoption and further development. We introduce spsann, a new R-package for the optimization of sample patterns using spatial simulated annealing. R is the most popular environment for data processing and analysis. Spatial simulated annealing is a well known method with widespread use to solve optimization problems in the soil and geo-sciences. This is mainly due to its robustness against local optima and easiness of implementation. spsann offers many optimizing criteria for sampling for variogram estimation (number of points or point-pairs per lag distance class - PPL), trend estimation (association/correlation and marginal distribution of the covariates - ACDC), and spatial interpolation (mean squared shortest distance - MSSD). spsann also includes the mean or maximum universal kriging variance (MUKV) as an optimizing criterion, which is used when the model of spatial variation is known. PPL, ACDC and MSSD were combined (PAN) for sampling when we are ignorant about the model of spatial variation. spsann solves this multi-objective optimization problem scaling the objective function values using their maximum absolute value or the mean value computed over 1000 random samples. Scaled values are aggregated using the weighted sum method. A graphical display allows to follow how the sample pattern is being perturbed during the optimization, as well as the evolution of its energy state. It is possible to start perturbing many points and exponentially reduce the number of perturbed points. The maximum perturbation distance reduces linearly with the number of iterations. The acceptance probability also reduces exponentially with the number of iterations. R is memory hungry and spatial simulated annealing is a

  13. Comparative studies of laser annealing technique and furnace annealing by X-ray diffraction and Raman analysis of lithium manganese oxide thin films for lithium-ion batteries

    International Nuclear Information System (INIS)

    Pröll, J.; Weidler, P.G.; Kohler, R.; Mangang, A.; Heißler, S.; Seifert, H.J.; Pfleging, W.

    2013-01-01

    The structure and phase formations of radio frequency magnetron sputtered lithium manganese oxide thin films (Li 1.1 Mn 1.9 O 4 ) under ambient air were studied. The influence of laser annealing and furnace annealing, respectively, on the bulk structure and surface phases was compared by using ex-situ X-ray diffraction and Raman analysis. Laser annealing technique formed a dominant (440)-reflection, furnace annealing led to both, (111)- and (440)-reflections within a cubic symmetry (S.G. Fd3m (227)). Additionally, in-situ Raman and in-situ X-ray diffraction were applied for online detection of phase transformation temperatures. In-situ X-ray diffraction measurements clearly identified the starting temperature for the (111)- and (440)-reflections around 525 °C and 400 °C, respectively. The 2θ Bragg peak positions of the characteristic (111)- and (440)-reflections were in good agreement with those obtained through conventional furnace annealing. Laser annealing of lithium manganese oxide films provided a quick and efficient technique and delivered a dominant (440)-reflection which showed the expected electrochemical behavior of the well-known two-step de-/intercalation process of lithium-ions into the cubic spinel structure within galvanostatic testing and cyclic voltammetry. - Highlights: ► Formation of cubic spinel-like phase of Li–Mn–O thin films by rapid laser annealing ► Laser annealing at 680 °C and 100 s was demonstrated as quick crystallization method. ► 400 °C was identified as characteristic onset temperature for (440)-reflex formation

  14. Differential evolution-simulated annealing for multiple sequence alignment

    Science.gov (United States)

    Addawe, R. C.; Addawe, J. M.; Sueño, M. R. K.; Magadia, J. C.

    2017-10-01

    Multiple sequence alignments (MSA) are used in the analysis of molecular evolution and sequence structure relationships. In this paper, a hybrid algorithm, Differential Evolution - Simulated Annealing (DESA) is applied in optimizing multiple sequence alignments (MSAs) based on structural information, non-gaps percentage and totally conserved columns. DESA is a robust algorithm characterized by self-organization, mutation, crossover, and SA-like selection scheme of the strategy parameters. Here, the MSA problem is treated as a multi-objective optimization problem of the hybrid evolutionary algorithm, DESA. Thus, we name the algorithm as DESA-MSA. Simulated sequences and alignments were generated to evaluate the accuracy and efficiency of DESA-MSA using different indel sizes, sequence lengths, deletion rates and insertion rates. The proposed hybrid algorithm obtained acceptable solutions particularly for the MSA problem evaluated based on the three objectives.

  15. Structural relaxation dynamics and annealing effects of sodium silicate glass.

    Science.gov (United States)

    Naji, Mohamed; Piazza, Francesco; Guimbretière, Guillaume; Canizarès, Aurélien; Vaills, Yann

    2013-05-09

    Here we report high-precision measurements of structural relaxation dynamics in the glass transition range at the intermediate and short length scale for a strong sodium silicate glass during long annealing times. We evidence for the first time the heterogeneous dynamics at the intermediate range order by probing the acoustic longitudinal frequency in the GHz region by Brillouin light scattering spectroscopy. Or, from in-situ Raman measurements, we show that relaxation is indeed homogeneous at the interatomic length scale. Our results show that the dynamics at the intermediate range order contains two distinct relaxation time scales, a fast and a slow component, differing by about a 10-fold factor below Tg and approaching to one another past the glass transition. The slow relaxation time agrees with the shear relaxation time, proving that Si-O bond breaking constitutes the primary control of structural relaxation at the intermediate range order.

  16. Manganese partitioning in low carbon manganese steel during annealing

    International Nuclear Information System (INIS)

    Lis, J.; Lis, A.; Kolan, C.

    2008-01-01

    For 6Mn16 steel experimental soft annealing at 625 deg. C for periods from 1 h to 60 h and modeling with Thermo-Calc were performed to estimate the partitioning of alloying elements, in particular Mn, between ferrite, cementite and austenite. Using transmission electron microscopy and X-ray analysis it was established that the increase of Mn concentration in carbides to a level 7%-11.2% caused a local decrease of the Ac 1 temperature and led to the presence of austenite around the carbides. Thus, after cooling, small bainite-martensite or bainite-martensite-retained austenite (BM-A) islands were observed. A dispersion of carbides and a coarsening process were observed. The measured amount of Mn in the carbides was in good agreement with theoretical predictions

  17. Geometric Optimization of Thermo-electric Coolers Using Simulated Annealing

    International Nuclear Information System (INIS)

    Khanh, D V K; Vasant, P M; Elamvazuthi, I; Dieu, V N

    2015-01-01

    The field of thermo-electric coolers (TECs) has grown drastically in recent years. In an extreme environment as thermal energy and gas drilling operations, TEC is an effective cooling mechanism for instrument. However, limitations such as the relatively low energy conversion efficiency and ability to dissipate only a limited amount of heat flux may seriously damage the lifetime and performance of the instrument. Until now, many researches were conducted to expand the efficiency of TECs. The material parameters are the most significant, but they are restricted by currently available materials and module fabricating technologies. Therefore, the main objective of finding the optimal TECs design is to define a set of design parameters. In this paper, a new method of optimizing the dimension of TECs using simulated annealing (SA), to maximize the rate of refrigeration (ROR) was proposed. Equality constraint and inequality constraint were taken into consideration. This work reveals that SA shows better performance than Cheng's work. (paper)

  18. Memoryless cooperative graph search based on the simulated annealing algorithm

    International Nuclear Information System (INIS)

    Hou Jian; Yan Gang-Feng; Fan Zhen

    2011-01-01

    We have studied the problem of reaching a globally optimal segment for a graph-like environment with a single or a group of autonomous mobile agents. Firstly, two efficient simulated-annealing-like algorithms are given for a single agent to solve the problem in a partially known environment and an unknown environment, respectively. It shows that under both proposed control strategies, the agent will eventually converge to a globally optimal segment with probability 1. Secondly, we use multi-agent searching to simultaneously reduce the computation complexity and accelerate convergence based on the algorithms we have given for a single agent. By exploiting graph partition, a gossip-consensus method based scheme is presented to update the key parameter—radius of the graph, ensuring that the agents spend much less time finding a globally optimal segment. (interdisciplinary physics and related areas of science and technology)

  19. Stochastic annealing simulations of defect interactions among subcascades

    Energy Technology Data Exchange (ETDEWEB)

    Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States); Singh, B.N.

    1997-04-01

    The effects of the subcascade structure of high energy cascades on the temperature dependencies of annihilation, clustering and free defect production are investigated. The subcascade structure is simulated by closely spaced groups of lower energy MD cascades. The simulation results illustrate the strong influence of the defect configuration existing in the primary damage state on subsequent intracascade evolution. Other significant factors affecting the evolution of the defect distribution are the large differences in mobility and stability of vacancy and interstitial defects and the rapid one-dimensional diffusion of small, glissile interstitial loops produced directly in cascades. Annealing simulations are also performed on high-energy, subcascade-producing cascades generated with the binary collision approximation and calibrated to MD results.

  20. Simulated annealing and joint manufacturing batch-sizing

    Directory of Open Access Journals (Sweden)

    Sarker Ruhul

    2003-01-01

    Full Text Available We address an important problem of a manufacturing system. The system procures raw materials from outside suppliers in a lot and processes them to produce finished goods. It proposes an ordering policy for raw materials to meet the requirements of a production facility. In return, this facility has to deliver finished products demanded by external buyers at fixed time intervals. First, a general cost model is developed considering both raw materials and finished products. Then this model is used to develop a simulated annealing approach to determining an optimal ordering policy for procurement of raw materials and also for the manufacturing batch size to minimize the total cost for meeting customer demands in time. The solutions obtained were compared with those of traditional approaches. Numerical examples are presented. .

  1. Thermal annealing of natural, radiation-damaged pyrochlore

    Energy Technology Data Exchange (ETDEWEB)

    Zietlow, Peter; Mihailova, Boriana [Hamburg Univ. (Germany). Dept. of Earth Sciences; Beirau, Tobias [Hamburg Univ. (Germany). Dept. of Earth Sciences; Stanford Univ., CA (United States). Dept. of Geological Sciences; and others

    2017-03-01

    Radiation damage in minerals is caused by the α-decay of incorporated radionuclides, such as U and Th and their decay products. The effect of thermal annealing (400-1000 K) on radiation-damaged pyrochlores has been investigated by Raman scattering, X-ray powder diffraction (XRD), and combined differential scanning calorimetry/thermogravimetry (DSC/TG). The analysis of three natural radiation-damaged pyrochlore samples from Miass/Russia [6.4 wt% Th, 23.1.10{sup 18} α-decay events per gram (dpg)], Panda Hill/Tanzania (1.6 wt% Th, 1.6.10{sup 18} dpg), and Blue River/Canada (10.5 wt% U, 115.4.10{sup 18} dpg), are compared with a crystalline reference pyrochlore from Schelingen (Germany). The type of structural recovery depends on the initial degree of radiation damage (Panda Hill 28%, Blue River 85% and Miass 100% according to XRD), as the recrystallization temperature increases with increasing degree of amorphization. Raman spectra indicate reordering on the local scale during annealing-induced recrystallization. As Raman modes around 800 cm{sup -1} are sensitive to radiation damage (M. T. Vandenborre, E. Husson, Comparison of the force field in various pyrochlore families. I. The A{sub 2}B{sub 2}O{sub 7} oxides. J. Solid State Chem. 1983, 50, 362, S. Moll, G. Sattonnay, L. Thome, J. Jagielski, C. Decorse, P. Simon, I. Monnet, W. J. Weber, Irradiation damage in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals: Ballistic versus ionization processes. Phys. Rev. 2011, 84, 64115.), the degree of local order was deduced from the ratio of the integrated intensities of the sum of the Raman bands between 605 and 680 cm{sup -1} divided by the sum of the integrated intensities of the bands between 810 and 860 cm{sup -1}. The most radiation damaged pyrochlore (Miass) shows an abrupt recovery of both, its short- (Raman) and long-range order (X-ray) between 800 and 850 K, while the weakly damaged pyrochlore (Panda Hill) begins to recover at considerably lower temperatures (near 500 K

  2. Lasing of Some Red Laser Dyes in Annealed Silica Xerogel

    Science.gov (United States)

    Bezkrovnaya, O. N.; Maslov, V. V.; Pritula, I. M.; Yurkevich, A. G.

    2018-01-01

    The spectral and energy characteristics of generation in the red spectral region 650-720 nm were measured and analyzed for three laser dyes in preliminarily annealed SiO2 xerogel matrices under laser excitation λp = 588 nm in a nonselective cavity. The specific laser-energy output for two of them (LK678 and Ox170) in the matrices was 10-13% higher than in MeOH. NBA dye in the matrix generated two laser radiation bands in the 700-720 nm region with pumping E p ≥ 80 mJ whereas its generation threshold in MeOH exceeded the maximum pumping energy of 140 mJ so that NBA generation was not observed. Laser emission spectra of the studied matrices in a nonselective cavity were red-shifted by 1000 cm-1 from the fluorescence maximum. Such a shift could improve the characteristics of biosensors based on these matrices.

  3. Dynamical quenching and annealing in self-organization multiagent models

    Science.gov (United States)

    Burgos, E.; Ceva, Horacio; Perazzo, R. P.

    2001-07-01

    We study the dynamics of a generalized minority game (GMG) and of the bar attendance model (BAM) in which a number of agents self-organize to match an attendance that is fixed externally as a control parameter. We compare the usual dynamics used for the minority game with one for the BAM that makes a better use of the available information. We study the asymptotic states reached in both frameworks. We show that states that can be assimilated to either thermodynamic equilibrium or quenched configurations can appear in both models, but with different settings. We discuss the relevance of the parameter G that measures the value of the prize for winning in units of the fine for losing. We also provide an annealing protocol by which the quenched configurations of the GMG can progressively be modified to reach an asymptotic equilibrium state that coincides with the one obtained with the BAM.

  4. Nuclide creation and annealing reactor waste in neutron fields

    International Nuclear Information System (INIS)

    Kondrat'ev, V.N.; Kadenko, I.M.

    2007-01-01

    We consider chemical elements in the Universe (their properties and transmutations) as a fuel powering an evolution of stars, galaxies, etc. The nuclear fusion reactions represent an energy source of stars and, in particular, the Sun fitting the life on the Earth. This brings a question on an origin and conditions for creation of life. We discuss some specific features of nuclear reaction chains at the hydrostatic burning of nuclides in stars and treaties for development of thermonuclear fusion reactors at the Earth based environment. The nova and supernova give promising astrophysical site candidates for synthesis of heavy atomic nuclei and renewing other nuclear components. Such an explosive nucleosynthesis yields the actinides containing basic fuel for nuclear fission reactors, among others. We briefly outline the e-, s-, and r-processes while accounting for ultra-strong stellar magnetization, and discuss some ideas for annealing the radioactive toxic nuclear waste

  5. Effect of thermal annealing of lead oxide film

    International Nuclear Information System (INIS)

    Hwang, Oh Hyeon; Kim, Sang Su; Suh, Jong Hee; Cho, Shin Hang; Kim, Ki Hyun; Hong, Jin Ki; Kim, Sun Ung

    2011-01-01

    Oxygen partial pressure in a growth process of lead oxide determines chemical and physical properties as well as crystalline structure. In order to supply oxygen, two ring-shape suppliers have been installed in a growth chamber. Films have been deposited using vacuum thermal evaporation from a raw material of yellow lead oxide powder (5N). Growth rate is controlled to be about 400 A/s, and film thickness more than 50 μm has been achieved. After deposition, the film is annealed at various temperatures under an oxygen atmosphere. In this study, an optimum growth condition for a good X-ray detector has been achieved by fine control of oxygen flow-rate and by thermal treatment. An electrical resistivity of 4.5x10 12 Ω cm is measured, and is comparable with the best data of PbO.

  6. Fluorescence reporters for Hfq oligomerization and RNA annealing

    Science.gov (United States)

    Panja, Subrata; Woodson, Sarah A.

    2015-01-01

    Fluorescence spectroscopy is a sensitive technique for detecting protein-protein, protein-RNA and RNA-RNA interactions, requiring only nanomolar concentrations of labeled components. Fluorescence anisotropy provides information about the assembly of multi-subunit proteins, while molecular beacons provide a sensitive and quantitative reporter for base pairing between complementary RNAs. Here we present a detailed protocol for labeling Hfq protein with cyanine 3-maleimide and dansyl chloride to study the protein oligomerization and RNA binding by semi-native polyacrylamide gel electrophoresis (PAGE) and fluorescence anisotropy. We also present a detailed protocol for measuring the rate of annealing between a molecular beacon and a target RNA in the presence of Hfq using a stopped-flow spectrometer. PMID:25579597

  7. Implantation and annealing effects in molecular organic films

    CERN Document Server

    Pakhomov, G L; Shashkin, V I; Tura, J M; Ribo, J M; Ottaviano, L

    2002-01-01

    Ion implantation and annealing effects on the surface of phthalocyanine thin films have been studied by means of atomic force microscopy and electron spectroscopy for chemical analysis. Both the topology and the chemical composition of the surface are affected by irradiation. The influence of the irradiation dose is shown. The chemical degradation of the layer results mainly in the decrease of atomic concentration of nitrogen and chlorine, and in the increase of atomic concentration of oxygen. At highest dose, carbonization becomes important. Furthermore, N 1s, C 1s and Cl 2p core levels testify that the formation of new chemical species occurs in implanted pthalocyanine films. All these processes are modified by subsequent heat treatment in different ways, depending on the applied implantation fluence.

  8. Post-irradiation annealing of coarse-grained model alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ray, P H.N.; Wilson, C; McElroy, R J [AEA Reactor Services, Harwell (United Kingdom)

    1994-12-31

    Thermal ageing and irradiation studies have been carried out on three model alloys (JPC, JPB, JPG) that have identical compositions except for different levels of phosphorus and/or copper. They have been irradiated in three conditions, as-received, heat treated to produce a coarse grained microstructure (similar to heat-affected-zone), and in this condition further aged at 450 C to produce a temper embrittled condition. One of the alloy have been subject to a post-irradiation anneal. The effect of these treatments on mechanical property changes has been characterized by Charpy testing and Vickers hardness measurements; the phosphorus segregation has been studied by a combination of STEM and Auger techniques.

  9. Low temperature annealing of cold-drawn pearlitic steel wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Bech, Jakob Ilsted; Hansen, Niels

    2015-01-01

    Cold-drawn pearlitic steel wires are nanostructured and the flow stress at room temperature can reach values above 6 GPa. A typical characteristic of the nanostructured metals, is the low ductility and thermal stability. In order to optimize both the processing and application of the wires......, the thermal behaviour is of interest. This has been studied by annealing the wires for 1h at temperatures from ambient temperature to 300 ℃ (573 K). It is expected that a raising temperature may lead to structural changes and a reduction in strength. The change in strength is however not expected to be large....... For this reason we have applied a very precise technique to measure the tensile properties of the wires from a strain of 10-4 to the maximum strain of about 1-2%. The structural changes have also been followed to estimate and relate strength changes to changes in structural parameters and morphology....

  10. Simulated annealing in adaptive optics for imaging the eye retina

    International Nuclear Information System (INIS)

    Zommer, S.; Adler, J.; Lipson, S. G.; Ribak, E.

    2004-01-01

    Full Text:Adaptive optics is a method designed to correct deformed images in real time. Once the distorted wavefront is known, a deformable mirror is used to compensate the aberrations and return the wavefront to a plane wave. This study concentrates on methods that omit wave front sensing from the reconstruction process. Such methods use stochastic algorithms to find the extremum of a certain sharpness function, thereby correcting the image without any information on the wavefront. Theoretical work [l] has shown that the optical problem can be mapped onto a model for crystal roughening. The main algorithm applied is simulated annealing. We present a first hardware realization of this algorithm in an adaptive optics system designed to image the retina of the human eye

  11. Positron annihilation studies on reactor irradiated and thermal annealed ferrocene

    International Nuclear Information System (INIS)

    Marques Netto, A.; Carvalho, R.S.; Magalhaes, W.F.; Sinisterra, R.D.

    1996-01-01

    Retention and thermal annealing following (n, γ) reaction in solid ferrocene, Fe(C 5 H 5 ) 2 , were studied by positron annihilation lifetime spectroscopy (PAL). Positronium (Ps) formation was observed in the non-irradiated compound with a probability or intensity (I 3 ) of 30%. Upon irradiation of the compound with thermal neutrons in a nuclear reactor, I 3 decreases with increasing irradiation time. Thermal treatment again increases I 3 values from 16% to 25%, revealing an important proportion of molecular reformation without variation of the ortho-positronium lifetime (τ 3 ). These results point out the major influence of the electronic structure as determining the Ps yields in the pure complex. In the irradiated and non irradiated complexes the results are satisfactorily explained on the basis of the spur model. (orig.)

  12. A simulated annealing approach for redesigning a warehouse network problem

    Science.gov (United States)

    Khairuddin, Rozieana; Marlizawati Zainuddin, Zaitul; Jiun, Gan Jia

    2017-09-01

    Now a day, several companies consider downsizing their distribution networks in ways that involve consolidation or phase-out of some of their current warehousing facilities due to the increasing competition, mounting cost pressure and taking advantage on the economies of scale. Consequently, the changes on economic situation after a certain period of time require an adjustment on the network model in order to get the optimal cost under the current economic conditions. This paper aimed to develop a mixed-integer linear programming model for a two-echelon warehouse network redesign problem with capacitated plant and uncapacitated warehouses. The main contribution of this study is considering capacity constraint for existing warehouses. A Simulated Annealing algorithm is proposed to tackle with the proposed model. The numerical solution showed the model and method of solution proposed was practical.

  13. Memory effect of ball-milled and annealed nanosized hematite

    International Nuclear Information System (INIS)

    Bercoff, P.G.; Bertorello, H.R.; Oliva, M.I.

    2007-01-01

    Fine particles of hematite (mean size 55 nm) were produced by ball milling a mixture of hematite and pure Fe and annealing at 1000 o C. X-ray diffraction (XRD) and Moessbauer spectroscopy show that only α-Fe 2 O 3 is present in the final product, with lattice and Moessbauer parameters that correspond to bulk hematite. ZFC and FC magnetization measurements were performed from 5 to 300 K, at different applied fields. Two magnetic regimes were observed: one at low temperatures (≤100 K) that we ascribe to the magnetic moments in the outer shell of the particles that couple to the magnetic moments in the core, and another at higher temperature that corresponds to the Morin transition, finding that the Morin temperature is T M =246 K. The memory effect is clearly observed in magnetic measurements that start from different remanence states and explained as dependent on the ordering of the magnetic moments within the particles

  14. Boron distribution in silicon after multiple pulse excimer laser annealing

    International Nuclear Information System (INIS)

    Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.; La Magna, A.; Italia, M.; Privitera, V.; Fortunato, G.; Cuscuna, M.; Mariucci, L.

    2005-01-01

    We have studied B redistribution in Si after excimer laser annealing (ELA) with multiple laser pulses. B was implanted with energies of 1 and 10 keV and doses of 1x10 14 and 1x10 15 cm -2 . ELA with the number of pulses from 1 to 100 was performed at room temperature and 450 deg. C in vacuum. Irrespective of the implantation parameters and the ELA conditions used, a pile-up in the B concentration is observed near the maximum melting depth after ten pulses of ELA. Moreover, a detailed study has revealed that B accumulates at the maximum melt depth gradually with the number of ELA pulses. Besides, an increase in the carrier concentration is observed at the maximum melt depth, suggesting electrical activity of the accumulated B. Formation of Si-B complexes and vacancy accumulation during multiple ELA are discussed as possible mechanisms for the B build-up

  15. The influence of annealing on manganese implanted GaAs films

    International Nuclear Information System (INIS)

    Buerger, Danilo; Zhou, Shengqiang; Grenzer, Joerg; Reuther, Helfried; Anwand, Wolfgang; Gottschalch, Volker; Helm, Manfred; Schmidt, Heidemarie

    2009-01-01

    Besides low-temperature molecular beam epitaxy, ion implantation provides an alternative route to incorporate Mn into GaAs above the equilibrium solubility limit. Recently, Mn implanted GaAs diluted magnetic semiconductor was obtained by pulsed laser annealing. However, post-implantation annealing can lead to the formation of secondary phases. In order to compare the post-annealing effect, we investigate GaMnAs by implanting up to 6 at% Mn followed by rapid thermal and flashlamp annealing. The structural properties were probed by high resolution X-ray diffraction. The magnetic properties were determined by SQUID measurements. Auger electron spectroscopy has been used to profile the depth distribution of Mn in GaAs after implantation and annealing. We elucidate after implantation a loss of As and that during rapid thermal annealing most of the Mn diffuses towards the surface. Flash lamp annealing prevents out-diffusion, but the recrystallisation efficiency is low. Only the flash lamp annealed samples reveal weak ferromagnetism.

  16. Effect of annealing temperature on the mechanical properties of Zircaloy-4 cladding

    International Nuclear Information System (INIS)

    Beauregard, R.J.; Clevinger, G.S.; Murty, K.L.

    1977-01-01

    The mechanical properties of Zircaloy cladding materials are sensitive to those fabrication variables which have an effect on the preferred crystallographic orientation or texture of the finished tube. The effect of one such variable, the final annealing temperature, on various mechanical properties is examined using tube reduced Zircaloy-4 fuel rod cladding annealed at temperatures from 905F to 1060F. This temperature range provides cladding with varying degrees of recrystallization including full recrystallization. The burst strength of the cladding at 650F decreased with the annealing temperature reaching a saturation value at approximately 1000F. The total circumferential elongation increased with the annealing temperature reaching a maximum at approximately 1000F and decreasing at higher temperatures. Hoop creep characteristics of Zircaloy cladding were studied as a function of the annealing temperature using closed-end internal pressurization tests at 750F and hoop stresses of 10, 15, 20 and 25 ksi. The effect of annealing temperature on the room temperature mechanical anisotropy parameters, R and P, was studied. The R-parameter was essentially independent of the annealing temperature while the P-parameter increased with annealing temperature. The mechanical anisotropy parameters were also studied as a function of the test temperature from ambient to approximately 800F using continuously monitored high precision extensometry. (Auth.)

  17. Interference effect on annealing temperature of A and E centers in silicon.

    Science.gov (United States)

    Fang, P. H.; Tanaka, T.

    1971-01-01

    The significance of recent experimental observations on the annealing defects in n-type silicon has been examined. The observed anomalous annealing temperatures of A and E centers and their impurity concentration dependence are explained by an interference between the two centers.

  18. Evolution of subsurface nanocavities in copper under argon bombardment and annealing

    NARCIS (Netherlands)

    Kulikov, D.V.; Kurnosikov, O.; Kharlamov, V.S.; Trushin, Yu.V.

    2013-01-01

    The experimental and theoretical studies of evolution of nanocavities in argon-irradiated copper under annealing are presented. The subsurface argon-filled nanocavities are formed during a short annealing at a temperature around 1000 K by migration and interaction of complexes of the simplest

  19. Electrical behavior of amide functionalized graphene oxide and graphene oxide films annealed at different temperatures

    International Nuclear Information System (INIS)

    Rani, Sumita; Kumar, Mukesh; Kumar, Dinesh; Sharma, Sumit

    2015-01-01

    Films of graphene oxide (GO) and amide functionalized graphene oxides (AGOs) were deposited on SiO 2 /Si(100) by spin coating and were thermally annealed at different temperatures. Sheet resistance of GO and AGOs films was measured using four probe resistivity method. GO an insulator at room temperature, exhibits decrease in sheet resistance with increase in annealing temperature. However, AGOs' low sheet resistance (250.43 Ω) at room temperature further decreases to 39.26 Ω after annealing at 800 °C. It was observed that the sheet resistance of GO was more than AGOs up to 700 °C, but effect was reversed after annealing at higher temperature. At higher annealing temperatures the oxygen functionality reduces in GO and sheet resistance decreases. Sheet resistance was found to be annealing time dependent. Longer duration of annealing at a particular temperature results in decrease of sheet resistance. - Highlights: • Amide functionalized graphene oxides (AGOs) were synthesized at room temperature (RT). • AGO films have low sheet resistance at RT as compared to graphene oxide (GO). • Fast decrease in the sheet resistance of GO with annealing as compared to AGOs • AGOs were found to be highly dispersible in polar solvents

  20. Physical model of evolution of oxygen subsystem of PLZT-ceramics at neutron irradiation and annealing

    CERN Document Server

    Kulikov, D V; Trushin, Y V; Veber, K V; Khumer, K; Bitner, R; Shternberg, A R

    2001-01-01

    The physical model of evolution of the oxygen subsystem defects of the ferroelectric PLZT-ceramics by the neutron irradiation and isochrone annealing is proposed. The model accounts for the effect the lanthanum content on the material properties. The changes in the oxygen vacancies concentration, calculated by the proposed model, agree well with the polarization experimental behavior by the irradiated material annealing

  1. MgO magnetic tunnel junctions of enduring F-type upon annealing

    International Nuclear Information System (INIS)

    Schleicher, F; Halisdemir, U; Urbain, E; Gallart, M; Boukari, S; Beaurepaire, E; Gilliot, P; Bowen, M; Lacour, D; Montaigne, F; Hehn, M

    2015-01-01

    The authors performed magnetotransport experiments to determine whether annealing alters the oxygen vacancy-mediated tunnelling potential landscape of the central portion of a MgO ultrathin film within sputtered CoFeB/MgO/CoFeB magnetic tunnel junctions. Using the Î rel method reveals a temperature-dependent tunnelling barrier height for a non-annealed barrier that arises from single oxygen vacancies (F centres) and is qualitatively identical to that found for its partly and fully annealed counterparts. Thus these MTJs with F centres remain of F-type upon annealing. This explicitly confirms that the large tunnel-magnetoresistance (TMR) increase upon annealing results mainly from structural modifications of MgO and CoFeB and not from vacancy pairing within the barrier. Photoluminescence spectra performed on both annealed and non-annealed thin MgO films grown on CoFeB electrodes support this conclusion. This work should promote renewed scrutiny over the precise impact of annealing on tunnelling magnetotransport across MgO. (paper)

  2. Annealing effects on strain and stress sensitivity of polymer optical fibre based sensors

    DEFF Research Database (Denmark)

    Pospori, A.; Marques, C. A. F.; Zubel, M. G.

    2016-01-01

    The annealing effects on strain and stress sensitivity of polymer optical fibre Bragg grating sensors after their photoinscription are investigated. PMMA optical fibre based Bragg grating sensors are first photo-inscribed and then they were placed into hot water for annealing. Strain, stress...... fibre tends to increase the strain, stress and force sensitivity of the photo-inscribed sensor....

  3. Large Deviations for the Annealed Ising Model on Inhomogeneous Random Graphs: Spins and Degrees

    Science.gov (United States)

    Dommers, Sander; Giardinà, Cristian; Giberti, Claudio; Hofstad, Remco van der

    2018-04-01

    We prove a large deviations principle for the total spin and the number of edges under the annealed Ising measure on generalized random graphs. We also give detailed results on how the annealing over the Ising model changes the degrees of the vertices in the graph and show how it gives rise to interesting correlated random graphs.

  4. Effect of annealing on properties of Mg doped Zn-ferrite nanoparticles

    Directory of Open Access Journals (Sweden)

    K. Nadeem

    2015-04-01

    Full Text Available A comparison of structural and magnetic properties of as-prepared and annealed (900 °C Mg doped Zn ferrite nanoparticles (Zn1−xMgxFe2O4, with x=0, 0.1, 0.2, 0.3, 0.4 and 0.5 is presented. X-ray diffraction (XRD studies confirmed the cubic spinel structure for both the as-prepared and annealed nanoparticles. The average crystallite size and lattice parameter were increased by annealing. Scanning electron microscopy (SEM images also showed that the average particle size increased after annealing. Fourier transform infrared spectroscopy (FTIR also confirmed the spinel structure for both series of nanoparticles. For both annealed and as-prepared nanoparticles, the O–Mtet.–O vibrational band shifts towards higher wave numbers with increased Mg concentration due to cationic rearrangement on the lattice sites. Magnetization studies revealed an anomalous decreasing magnetization for the annealed nanoparticles which is also ascribed to cationic rearrangement on the lattice sites after annealing. The measurement of coercivity showed a decreasing trend by annealing due to the increased nanoparticle size and better crystallinity.

  5. The effects of thermal annealing in structural and optical properties of RF sputtered amorphous silicon

    International Nuclear Information System (INIS)

    Abdul Fatah Awang Mat

    1988-01-01

    The effect of thermal annealing on structural and optical properties of amorphous silicon are studied on samples prepared by radio-frequency sputtering. The fundamental absorption edge of these films are investigated at room temperature and their respective parameters estimated. Annealing effect on optical properties is interpreted in terms of the removal of voids and a decrease of disorder. (author)

  6. Thermal Annealing induced relaxation of compressive strain in porous GaN structures

    KAUST Repository

    Ben Slimane, Ahmed; Najar, Adel; Ng, Tien Khee; Ooi, Boon S.

    2012-01-01

    The effect of annealing on strain relaxation in porous GaN fabricated using electroless chemical etching is presented. The Raman shift of 1 cm-1 in phonon frequency of annealed porous GaN with respect to as-grown GaN corresponds to a relaxation

  7. Enhanced bulk heterojunction devices prepared by thermal and solvent vapor annealing processes

    Science.gov (United States)

    Forrest, Stephen R.; Thompson, Mark E.; Wei, Guodan; Wang, Siyi

    2017-09-19

    A method of preparing a bulk heterojunction organic photovoltaic cell through combinations of thermal and solvent vapor annealing are described. Bulk heterojunction films may prepared by known methods such as spin coating, and then exposed to one or more vaporized solvents and thermally annealed in an effort to enhance the crystalline nature of the photoactive materials.

  8. Facile Synthesis of Calcium Borate Nanoparticles and the Annealing Effect on Their Structure and Size

    Directory of Open Access Journals (Sweden)

    Manizheh Navasery

    2012-11-01

    Full Text Available Calcium borate nanoparticles have been synthesized by a thermal treatment method via facile co-precipitation. Differences of annealing temperature and annealing time and their effects on crystal structure, particle size, size distribution and thermal stability of nanoparticles were investigated. The formation of calcium borate compound was characterized by X-ray diffraction (XRD and Fourier Transform Infrared spectroscopy (FTIR, Transmission electron microscopy (TEM, and Thermogravimetry (TGA. The XRD patterns revealed that the co-precipitated samples annealed at 700 °C for 3 h annealing time formed an amorphous structure and the transformation into a crystalline structure only occurred after 5 h annealing time. It was found that the samples annealed at 900 °C are mostly metaborate (CaB2O4 nanoparticles and tetraborate (CaB4O7 nanoparticles only observed at 970 °C, which was confirmed by FTIR. The TEM images indicated that with increasing the annealing time and temperature, the average particle size increases. TGA analysis confirmed the thermal stability of the annealed samples at higher temperatures.

  9. Formation of metal-alloy nanoclusters in silica by ion implantation and annealing in selected atmosphere

    International Nuclear Information System (INIS)

    Battaglin, G.; Cattaruzza, E.; Gonella, F.; Mattei, G.; Mazzoldi, P.; Sada, C.; Zhang, X.

    2000-01-01

    The formation of binary alloy clusters in sequentially ion-implanted Au-Cu or Au-Ag silica glass has been studied as a function of the annealing atmosphere. Alloy formation has been evidenced in the as-implanted samples. The selective influence on Au precipitation of either oxygen or hydrogen annealing atmosphere governs the alloy cluster formation and the thermal stability

  10. Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

    International Nuclear Information System (INIS)

    Gayathri, A.G.; Joseph, C.M.

    2016-01-01

    Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10 9 and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

  11. Effect of annealing temperature on the stress and structural properties of Ge core fibre

    Science.gov (United States)

    Zhao, Ziwen; Cheng, Xueli; Xue, Fei; He, Ting; Wang, Tingyun

    2017-09-01

    Effect of annealing temperature on the stress and structural properties of a Ge core fibre via the molten core drawing (MCD) method is investigated using Raman spectroscopy, Scanning electronic microscopy (SEM), and X-ray diffraction. The experimental results showed that the Raman peak position of the Ge fibre shifted from 297.6 cm-1 to 300.5 cm-1, and the FWHM value decreased from 4.53 cm-1 to 4.31 cm-1, when the annealing is carried out at 700 °C, 800 °C, and 900 °C, respectively. For the Ge core annealed at 900 °C, an apparent crystal grain can be seen in the SEM image, and the diffraction peaks of the (3 3 1) plane are generated in the X-ray diffraction spectra. These results show that optimising the annealing temperature allows the release of the residual stress in the Ge core. When the Ge core fibre is annealed at 900 °C, it exhibits the lowest residual stress and the highest crystal quality, and the quality improvement relative to that of the sample annealed at 800 °C is significant. Hence, annealing at around 900 °C can greatly improve the quality of a Ge core fibre. Further performance improvement of the Ge core fibre by annealing techniques can be anticipated.

  12. Surface Impedance of Copper MOB Depending on the Annealing Temperature and Deformation Degree

    International Nuclear Information System (INIS)

    Kutovoj, V.A.; Nikolaenko, A.A.; Stoev, P.I.; Vinogradov, D.V.

    2006-01-01

    Results of researches of influence of annealing temperature and deformation degree on mechanical features of copper MOB are presented. It is shown that minimal surface resistance is observed in copper samples that were subject to pre-deformation and were annealed in the range of temperatures 873...923 K

  13. Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

    Energy Technology Data Exchange (ETDEWEB)

    Gayathri, A.G., E-mail: gaythri305@yahoo.com; Joseph, C.M., E-mail: cmjoseph@rediffmail.com

    2016-09-15

    Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10{sup 9} and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

  14. The influence of annealing temperature and time on the efficiency of pentacene: PTCDI organic solar cells

    Directory of Open Access Journals (Sweden)

    Mehmet Biber

    Full Text Available In this study, fabrication of a polycyclic aromatic hydrocarbon/Perylene Tetracarboxylic Di-Imide (PTCDI, donor/acceptor solar cells are presented using physical vapour deposition technique in a 1000 class glove box. An ITO/PEDOT:PSS/Pentacene/PTCDI/Al (ITO = Indium Tin Oxide and PEDOT:PSS = poly(3,4-ethylenedioxythiophene polystyrene sulfonate solar cell has been obtained and the power conversion efficiency, PCE (η of about 0.33% has been obtained under simulated solar illumination of 300 W/m2. Furthermore, the effects of annealing temperatures (at 100 and 150 °C and of annealing (at 100 °C times for 5 and 10 min. on the power conversion efficiency, η of the solar cells have also been investigated. In general, it has been seen that the thermal annealing deteriorated the characteristics parameters of Pentacene/PTCDI solar cell such that both fill factor, FF and η decreased after annealing and with increase of annealing time. Atomic force microscopy (AFM images showed that the phase segregation and grain size increased and the surface roughness of Pentacene film decreased and these effects reduced the η value. The η values of the solar cell have been determined as 0.33%, 0.12% and 0.06% for pre-annealing, annealing at 100 and 150 °C, respectively. Keywords: Organic solar cells, PTCDI, Pentacene, Annealing

  15. Formation of Medium Carbon TRIP Steel Microstructure During Annealing in the Intercritical Temperature Range

    Directory of Open Access Journals (Sweden)

    Kokosza A.

    2014-10-01

    Full Text Available The paper presents the results of research conducted on austenite formation in the microstructure of 41MnSi6-5 TRIP steel during annealing in the intercritical temperature range. The influence of the annealing temperature on the volume fraction of retained austenite in the microstructure of the investigated steel after water quenching was also determined.

  16. Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Kuo-Ming; Huang, Chao-Hsien; Lin, Shiao-Chi; Wu, Jong-Ching [Department of Physics and Taiwan SPIN Research Center, National Changhua University of Education, Changhua 50007 (China); Kao, Ming-Jer; Tsai, Ming-Jinn [Industrial Technology Research Institute, Hsinchu 31040 (China); Horng, Lance

    2007-12-15

    In this study, the transient annealing effect on the switching behavior of microstructured Co{sub 60}Fe{sub 20}B{sub 20}-based magnetic tunnel junctions has been studied through magnetoresistance measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta(20)/PtMn(15)/CoFeB(3)/Al(0.7)-oxide/CoFeB(2)/Ru(8)/Ta(40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200{proportional_to}250 C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 C annealing and results in less damage at temperature of 350 C and 400 C. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Wu, Kuo-Ming; Huang, Chao-Hsien; Lin, Shiao-Chi; Wu, Jong-Ching; Kao, Ming-Jer; Tsai, Ming-Jinn; Horng, Lance

    2007-01-01

    In this study, the transient annealing effect on the switching behavior of microstructured Co 60 Fe 20 B 20 -based magnetic tunnel junctions has been studied through magnetoresistance measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta(20)/PtMn(15)/CoFeB(3)/Al(0.7)-oxide/CoFeB(2)/Ru(8)/Ta(40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200∝250 C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 C annealing and results in less damage at temperature of 350 C and 400 C. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios

    DEFF Research Database (Denmark)

    Shayesteh, M.; O'Connell, D.; Gity, F.

    2014-01-01

    The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm-3 as well as an ION/IOFF ratio of approximately 105 and ide...

  19. Effect of annealing on phase transition in poly(vinylidene fluoride)

    Indian Academy of Sciences (India)

    Here we report the crystallization of both and -phase PVDF films by varying preparation temperature using DMSO solvent. The -phase PVDF films were annealed at 70, 90, 110, 130 and 160°C for five hours. The changes in the phase contents in the PVDF at different annealing conditions have been described.

  20. Computational Role of Tunneling in a Programmable Quantum Annealer

    Science.gov (United States)

    Boixo, Sergio; Smelyanskiy, Vadim; Shabani, Alireza; Isakov, Sergei V.; Dykman, Mark; Amin, Mohammad; Mohseni, Masoud; Denchev, Vasil S.; Neven, Hartmut

    2016-01-01

    Quantum tunneling is a phenomenon in which a quantum state tunnels through energy barriers above the energy of the state itself. Tunneling has been hypothesized as an advantageous physical resource for optimization. Here we present the first experimental evidence of a computational role of multiqubit quantum tunneling in the evolution of a programmable quantum annealer. We developed a theoretical model based on a NIBA Quantum Master Equation to describe the multi-qubit dissipative cotunneling effects under the complex noise characteristics of such quantum devices.We start by considering a computational primitive, the simplest non-convex optimization problem consisting of just one global and one local minimum. The quantum evolutions enable tunneling to the global minimum while the corresponding classical paths are trapped in a false minimum. In our study the non-convex potentials are realized by frustrated networks of qubit clusters with strong intra-cluster coupling. We show that the collective effect of the quantum environment is suppressed in the critical phase during the evolution where quantum tunneling decides the right path to solution. In a later stage dissipation facilitates the multiqubit cotunneling leading to the solution state. The predictions of the model accurately describe the experimental data from the D-WaveII quantum annealer at NASA Ames. In our computational primitive the temperature dependence of the probability of success in the quantum model is opposite to that of the classical paths with thermal hopping. Specially, we provide an analysis of an optimization problem with sixteen qubits,demonstrating eight qubit cotunneling that increases success probabilities. Furthermore, we report results for larger problems with up to 200 qubits that contain the primitive as subproblems.

  1. Steel impurity element effects on postirradiation properties recovery by annealing

    International Nuclear Information System (INIS)

    Hawthorne, J.R.

    1987-01-01

    The influence of copper content and phosphorus content on notch ductility recovery by 399 0 C postirradiation heat treatment was explored for A 533-B and A 302-B pressure vessel steels. Charpy-V (C/sub V/) specimens for the investigation were obtained from ten plates produced from four (4-way split) laboratory melts. The plates were 15.2 mm thick but were heat treated to reproduce the microstructure of 150-mm and thicker A 302-B plates at the quarter-thickness location. The C/sub V/ specimens were irradiated in two assemblies at 288 0 C (550 0 F) to a fluence of --2.5 x 10/sup 19/ n/cm/sup 2/ in a light-water-cooled and moderated test reactor. Notch ductility properties in the asirradiated and 399 0 C, 168 h postirradiation-annealed conditions were determined. In addition, separate sets of specimens were thermally conditioned at 288 0 C and at 288 0 C followed by 399 0 C to benchmark the effects of temperature in the absence of irradiation. The results indicate that copper has a significant influence on the magnitude of residual embrittlement after annealing. In contrast, phosphorus contents in the range of 0.002 to 0.025% were found not to have an effect on residual embrittlement either in high or low copper steels. Essentially full recovery in 41-J transition temperature was observed for high phosphorus, low copper content steels. Effects of nickel alloying on recovery behavior were also investigated through data comparisons for A 302-B versus A 533-B plates

  2. Structural coarsening during annealing of an aluminum plate heavily deformed using ECAE

    DEFF Research Database (Denmark)

    Mishin, Oleg V.; Zhang, Yubin; Godfrey, A.

    2015-01-01

    The microstructure and softening behaviour have been investigated in an aluminum plate heavily deformed by equal channel angular extrusion and subsequently annealed at 170 °C. It is found that at this temperature the microstructure evolves by coarsening with no apparent signs of recrystallization...... even after 2 h of annealing. Both coarsening and softening are rapid within first 10 minutes of annealing followed by a slower evolution with increasing annealing duration. Evidence of triple junction (TJ) motion during coarsening is obtained by inspecting the microstructure in one region using...... the electron backscatter diffraction technique both before and after annealing for 10 minutes. The fraction of fast-migrating TJs is found to strongly depend of the type of boundaries composing a junction. The greatest fraction of fast-migrating TJs is in the group, where all boundaries forming a junction...

  3. The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system

    International Nuclear Information System (INIS)

    Ahmed, A.M.; Mohamed Abd El-Mo'ez A; Mohamed, H.F.; Diab, A.K.; Mohamed Ami M; Mazen, A.E.A.

    2016-01-01

    This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800 and 900 deg C) in air for (La 0. 7Ba 0.3 MnO 3 ) 1-x /(NiO) x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the samples. However, it is observed that the annealing treatment has a notable effect on the electrical resistivity and the metal-semiconductor transition temperature Tms. Temperature dependent magnetization measurements showed a decrease in Curie temperature TC with annealing temperature. In the same time, annealing process decreases the magnetoresistance of La 0.7 Ba 0.3 MnO 3 , in contrast to (La 0.7 Ba 0.3 MnO 3 ) 0.9 /(NiO) 0.1 composite.

  4. An automated ion implant/pulse anneal machine for low cost silicon cell production

    International Nuclear Information System (INIS)

    Armini, A.J.; Bunker, S.N.; Spitzer, M.B.

    1982-01-01

    The continuing development of a high throughput ion implanter and a pulsed electron beam annealer designed for dedicated silicon solar cell manufacture is reviewed. This equipment is intended for production of junctions in 10 cm wide wafers at a throughput up to 10 MWsub(p) per year. The principal features of the implanter are the lack of mass analysis and defocusing utilizing electrostatic deflection. The implanted surface is annealed by liquid phase epitaxy resulting from a single burst of a large area electron beam. Cells with non-mass analyzed ion implantation have yielded AM1 cell efficiencies in excess of 15%. Pulse annealed Czochralski cells have been made with AM1 efficiencies of 13% vs. 15% for a furnace annealed group. Results of pulse annealing of polycrystalline materials indicate that cell performance comparable to diffusion can be obtained. (Auth.)

  5. Manipulation of magnetic properties of glass-coated microwires by annealing

    Energy Technology Data Exchange (ETDEWEB)

    Zhukov, A., E-mail: arkadi.joukov@ehu.es [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain); Chichay, K. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); Talaat, A. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain); Rodionova, V. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); National University of Science and Technology (MISIS), 119049 Moscow (Russian Federation); Blanco, J.M. [Dpto. Física Aplicada, EUPDS Basque Country University UPV/EHU (Spain); Ipatov, M.; Zhukova, V. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain)

    2015-06-01

    We demonstrated that magnetic properties (hysteresis loops, domain wall propagation and giant magnetoimpedance effect) of Fe and Co-rich amorphous microwires can be tailored by stress and conventional annealing. Observed dependences discussed considering stress relaxation, back stresses and change of the magnetostriction after samples annealing. These considerations have been proved by experimental observation of the change of the magnetostriction coefficient sign induced by annealing. - Highlights: • Manipulation of hysteresis loop of amorphous Co–Fe- rich microwires by annealing. • Coexistence of Giant magnetoimpedance effect and fast domain wall propagation in the same sample. • Evidence of annealing dependence of the magnetostriction coefficient. • Effect of stress induced anisotropy on magnetic properties and GMI effect.

  6. Novel thermal annealing methodology for permanent tuning polymer optical fiber Bragg gratings to longer wavelengths.

    Science.gov (United States)

    Pospori, A; Marques, C A F; Sagias, G; Lamela-Rivera, H; Webb, D J

    2018-01-22

    The Bragg wavelength of a polymer optical fiber Bragg grating can be permanently shifted by utilizing the thermal annealing method. In all the reported fiber annealing cases, the authors were able to tune the Bragg wavelength only to shorter wavelengths, since the polymer fiber shrinks in length during the annealing process. This article demonstrates a novel thermal annealing methodology for permanently tuning polymer optical fiber Bragg gratings to any desirable spectral position, including longer wavelengths. Stretching the polymer optical fiber during the annealing process, the period of Bragg grating, which is directly related with the Bragg wavelength, can become permanently longer. The methodology presented in this article can be used to multiplex polymer optical fiber Bragg gratings at any desirable spectral position utilizing only one phase-mask for their photo-inscription, reducing thus their fabrication cost in an industrial setting.

  7. Manipulation of magnetic properties of glass-coated microwires by annealing

    International Nuclear Information System (INIS)

    Zhukov, A.; Chichay, K.; Talaat, A.; Rodionova, V.; Blanco, J.M.; Ipatov, M.; Zhukova, V.

    2015-01-01

    We demonstrated that magnetic properties (hysteresis loops, domain wall propagation and giant magnetoimpedance effect) of Fe and Co-rich amorphous microwires can be tailored by stress and conventional annealing. Observed dependences discussed considering stress relaxation, back stresses and change of the magnetostriction after samples annealing. These considerations have been proved by experimental observation of the change of the magnetostriction coefficient sign induced by annealing. - Highlights: • Manipulation of hysteresis loop of amorphous Co–Fe- rich microwires by annealing. • Coexistence of Giant magnetoimpedance effect and fast domain wall propagation in the same sample. • Evidence of annealing dependence of the magnetostriction coefficient. • Effect of stress induced anisotropy on magnetic properties and GMI effect

  8. Quantum annealing versus classical machine learning applied to a simplified computational biology problem

    Science.gov (United States)

    Li, Richard Y.; Di Felice, Rosa; Rohs, Remo; Lidar, Daniel A.

    2018-01-01

    Transcription factors regulate gene expression, but how these proteins recognize and specifically bind to their DNA targets is still debated. Machine learning models are effective means to reveal interaction mechanisms. Here we studied the ability of a quantum machine learning approach to predict binding specificity. Using simplified datasets of a small number of DNA sequences derived from actual binding affinity experiments, we trained a commercially available quantum annealer to classify and rank transcription factor binding. The results were compared to state-of-the-art classical approaches for the same simplified datasets, including simulated annealing, simulated quantum annealing, multiple linear regression, LASSO, and extreme gradient boosting. Despite technological limitations, we find a slight advantage in classification performance and nearly equal ranking performance using the quantum annealer for these fairly small training data sets. Thus, we propose that quantum annealing might be an effective method to implement machine learning for certain computational biology problems. PMID:29652405

  9. Positron annihilation spectroscopy study on annealing effect of CuO nanoparticles

    International Nuclear Information System (INIS)

    Shi, Jianjian; Wang, Jiaheng; Yang, Wei; Zhu, Zhejie; Wu, Yichu

    2016-01-01

    The microstructure and defects of CuO nanoparticles under isochronal annealing were investigated by positron annihilation spectroscopy (PAS), X-ray diffraction (XRD) and scanning electron microscope (SEM). XRD and SEM results indicated that the average grain sizes of CuO nanoparticles grew slowly below 800 °C, and then increased rapidly with the annealing temperature from 800 to 1000 °C. Positron lifetime analysis exhibited that positrons were mainly annihilated in mono-vacancies (V Cu , V O ) and vacancy clusters when annealing from 200 to 800 °C. Furthermore, W-S plot of Doppler broadening spectra at different annealing temperatures found that the (W, S) points distributed on two different defect species, which suggested that V − Cu - V + O complexes were produced when the grains grew to bigger size after annealing above 800 °C, and positrons might annihilate at these complexes. (author)

  10. Enhanced exchange bias in MnN/CoFe bilayers after high-temperature annealing

    Science.gov (United States)

    Dunz, M.; Schmalhorst, J.; Meinert, M.

    2018-05-01

    We report an exchange bias of more than 2700 Oe at room temperature in MnN/CoFe bilayers after high-temperature annealing. We studied the dependence of exchange bias on the annealing temperature for different MnN thicknesses in detail and found that samples with tMnN > 32nm show an increase of exchange bias for annealing temperatures higher than TA = 400 °C. Maximum exchange bias values exceeding 2000 Oe with reasonably small coercive fields around 600 Oe are achieved for tMnN = 42, 48 nm. The median blocking temperature of those systems is determined to be 180 °C after initial annealing at TA = 525 °C. X-ray diffraction measurements and Auger depth profiling show that the large increase of exchange bias after high-temperature annealing is accompanied by strong nitrogen diffusion into the Ta buffer layer of the stacks.

  11. High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

    Science.gov (United States)

    Chowdhury, A.; Schneider, J.; Dore, J.; Mermet, F.; Slaoui, A.

    2012-06-01

    Thin film polycrystalline silicon films grown on glass substrate were irradiated with an infrared continuous wave laser for defects annealing and/or dopants activation. The samples were uniformly scanned using an attachment with the laser system. Substrate temperature, scan speed and laser power were varied to find suitable laser annealing conditions. The Raman spectroscopy and Suns- V oc analysis were carried out to qualify the films quality after laser annealing. A maximum enhancement of the open circuit voltage V oc of about 100 mV is obtained after laser annealing of as-grown polysilicon structures. A strong correlation was found between the full width half maximum of the Si crystalline peak and V oc. It is interpreted as due to defects annealing as well as to dopants activation in the absorbing silicon layer. The maximum V oc reached is 485 mV after laser treatment and plasma hydrogenation, thanks to defects passivation.

  12. Post deposition annealing effect on the properties of Al2O3/InP interface

    Science.gov (United States)

    Kim, Hogyoung; Kim, Dong Ha; Choi, Byung Joon

    2018-02-01

    Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.

  13. Effect of annealing temperature on electrochemical characteristics of ruthenium oxide/multi-walled carbon nanotube composites

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Min-Kang [Department of Chemistry, Inha University, 253, Incheon 402-751 (Korea, Republic of); Saouab, Abdelghani [Department of Mechanical Engineering, University of Le Havre, Place Robert Schuman, BP 4006, 76610 Le Havre (France); Park, Soo-Jin, E-mail: sjpark@inha.ac.k [Department of Chemistry, Inha University, 253, Incheon 402-751 (Korea, Republic of)

    2010-02-25

    The preparation and characterization of high-surface-area ruthenium oxide (RuO{sub 2})/multi-walled carbon nanotubes (MWCNTs) composite electrodes for use in supercapacitors is reported in this work. The RuO{sub 2}/MWCNTs composites were prepared by the polyol process of RuO{sub 2} into MWCNTs and by Ru annealing in air before mixed with MWCNTs. The chemically oxidized and annealed Ru nanoparticles contribute a pseudocapacitance to the electrodes and dramatically improve the energy storage characteristics of the MWCNTs. These composites annealed at 200 deg. C demonstrate specific capacitances in excess of 130 F/g in comparison to 80 F/g for pristine MWCNTs. The annealing temperature is found to play an important role, as it affects the electrochemical performance of annealed RuO{sub 2}/MWCNTs composites critically due to its influence on the diffusion of protons into the structure.

  14. Effect of Different Post Deposition Annealing Treatments on Properties of Zinc Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Arti Arora

    2010-06-01

    Full Text Available Two different post deposition annealing atmospheres of oxygen and forming gas have been investigated for the improvement of rf sputtered zinc oxide thin films. The results show that type of atmosphere (oxidant o reduction plays an important role in the changes observed in structural, electrical and optical properties. It has been found that the structural properties of rf sputtered zinc oxide films improve in all the annealing environments. The intensity and grain size increases as the annealing temperature increases. It has been found that films become stress free at lowest temperature in oxygen as compare to forming gas annealing. The zinc oxide films annealed in oxygen shows sufficient resistivity associated to high transmittance (83 % characteristics required for MEMS based acoustic devices.

  15. Propagating self-sustained annealing of radiation-induced interstitial complexes

    International Nuclear Information System (INIS)

    Bokov, P M; Selyshchev, P A

    2016-01-01

    A propagating self-sustained annealing of radiation induced defects as a result of thermal-concentration instability is studied. The defects that are considered in the model are complexes. Each of them consists of one atom of impunity and of one interstitial atom. Crystal with defects has extra energy which is transformed into heat during defect annealing. Simulation of the auto-wave of annealing has been performed. The front and the speed of the auto-wave have been obtained. It is shown that annealing occurs in a narrow region of time and space. There are two kinds of such annealing behaviour. In the first case the speed of the auto-wave oscillates near its constant mean value and the front of temperature oscillates in a complex way. In the second case the speed of propagation is constant and fronts of temperature and concentration look like sigmoid functions. (paper)

  16. Study of photoluminescence from annealed bulk-ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yoneta, M.; Ohishi, M.; Saito, H. [Department of Applied Physics, Okayama University of Science, 1-1 Ridai-cho, Okayama 700-0005 (Japan); Yoshino, K. [Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192 (Japan); Honda, M. [Faculty of Science, Naruto University of Education, 748 Nakajima, Takashima, Naruto-cho, Naruto-shi 772-8502 (Japan)

    2006-03-15

    We have investigated the influence of rapid thermal annealing on the photoluminescence of bulk-ZnO single crystal. As-grown ZnO wafer, illuminated by 325 nm ultraviolet light at 4.2 K, emitted the visible luminescence of pale green centered of 2.29 eV. The luminescence was observed by the anneal at the temperature range between 400 C and 1000 C, however, its intensity decreased with anneal temperature. The free-exciton and the 2.18 eV emission line were obtained by the anneal at 1200 C for 60 sec. From the X-ray diffraction and the surface morphology measurements, the improvement of the crystallinity of bulk-ZnO crystal were confirmed. We suggest that a rapid thermal annealing technique is convenience to improve the the quality of bul-ZnO single crystals. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Annealing bounds to prevent further Charge Transfer Inefficiency increase of the Chandra X-ray CCDs

    Energy Technology Data Exchange (ETDEWEB)

    Monmeyran, Corentin, E-mail: comonmey@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States); Patel, Neil S., E-mail: neilp@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States); Bautz, Mark W., E-mail: mwb@space.mit.edu [Kavli Institute for Astrophysics and Space Research, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States); Grant, Catherine E., E-mail: cgrant@space.mit.edu [Kavli Institute for Astrophysics and Space Research, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States); Prigozhin, Gregory Y., E-mail: gyp@space.mit.edu [Kavli Institute for Astrophysics and Space Research, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States); Agarwal, Anuradha, E-mail: anu@mit.edu [Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States); Kimerling, Lionel C., E-mail: lckim@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States); Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States)

    2016-12-15

    After the front-illuminated CCDs on board the X-ray telescope Chandra were damaged by radiation after launch, it was decided to anneal them in an effort to remove the defects introduced by the irradiation. The annealing led to an unexpected increase of the Charge Transfer Inefficiency (CTI). The performance degradation is attributed to point defect interactions in the devices. Specifically, the annealing at 30 °C activated the diffusion of the main interstitial defect in the device, the carbon interstitial, which led to its association with a substitutional impurity, ultimately resulting in a stable and electrically active defect state. Because the formation reaction of this carbon interstitial and substitutional impurity associate is diffusion limited, we recommend a higher upper bound for the annealing temperature and duration of any future CCD anneals, that of −50 °C for one day or −60 °C for a week, to prevent further CTI increase.

  18. Quantum annealing versus classical machine learning applied to a simplified computational biology problem

    Science.gov (United States)

    Li, Richard Y.; Di Felice, Rosa; Rohs, Remo; Lidar, Daniel A.

    2018-03-01

    Transcription factors regulate gene expression, but how these proteins recognize and specifically bind to their DNA targets is still debated. Machine learning models are effective means to reveal interaction mechanisms. Here we studied the ability of a quantum machine learning approach to classify and rank binding affinities. Using simplified data sets of a small number of DNA sequences derived from actual binding affinity experiments, we trained a commercially available quantum annealer to classify and rank transcription factor binding. The results were compared to state-of-the-art classical approaches for the same simplified data sets, including simulated annealing, simulated quantum annealing, multiple linear regression, LASSO, and extreme gradient boosting. Despite technological limitations, we find a slight advantage in classification performance and nearly equal ranking performance using the quantum annealer for these fairly small training data sets. Thus, we propose that quantum annealing might be an effective method to implement machine learning for certain computational biology problems.

  19. Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing

    International Nuclear Information System (INIS)

    Wu, K.-M.; Wang, Y.-H.; Chen, Wei-Chuan; Yang, S.-Y.; Shen, Kuei-Hung; Kao, M.-J.; Tsai, M.-J.; Kuo, C.-Y.; Wu, J.-C.; Horng, Lance

    2007-01-01

    Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co 60 Fe 20 B 20 was studied through magnetoresistance (R-H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R-H loops were enhanced from 100 deg. C to 250 deg. C . Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 deg. C rapid annealing and still shows about 25% TMR even after 400 deg. C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature

  20. Effect of annealing time on morphological characteristics of Ba(Zr,Ti)O3 thin films

    International Nuclear Information System (INIS)

    Cavalcante, L.S.; Anicete-Santos, M.; Pontes, F.M.; Souza, I.A.; Santos, L.P.S.; Rosa, I.L.V.; Santos, M.R.M.C.; Santos-Junior, L.S.; Leite, E.R.; Longo, E.

    2007-01-01

    Ba(Zr 0.50 Ti 0.50 )O 3 thin films were prepared by the polymeric precursor method using the annealing low temperature of 300 o C for 8, 16, 24, 48, 96 and 192h in a furnace tube with oxygen atmosphere. The X-ray diffraction patterns revealed that the film annealed for 192 h presented some crystallographic planes (1bar 0bar 0) (1bar 1bar 0) and (2bar 0bar 0) in its crystalline lattice. Fourier transformed infrared presented the formation of metal-oxygen stretching at around 756cm -1 . The atomic force microscopy analysis presented the growth of granules in the Ba(Zr 0.50 Ti 0.50 )O 3 films annealed from 8 to 96h. The crystalline film annealed for 192h already presents grains in its perovskite structure. It evidenced a reduction in the thickness of the thin films with the increase of the annealing time

  1. High resolution electron microscopy study of as-prepared and annealed tungsten-carbon multilayers

    International Nuclear Information System (INIS)

    Nguyen, T.D.; Gronsky, R.; Kortright, J.B.

    1988-12-01

    A series of sputtered tungsten-carbon multilayer structures with periods ranging from 2 to 12 nm in the as-prepared state and after annealing at 500/degree/C for 4 hours has been studied with high resolution transmission electron microscopy. The evolution with annealing of the microstructure of these multilayers depends on their period. As-prepared structures appear predominantly amorphous from TEM imaging and diffraction. Annealing results in crystallization of the W-rich layers into WC in the larger period samples, and less complete or no crystallization in the smaller period samples. X-ray scattering reveals that annealing expands the period in a systematic way. The layers remain remarkably well-defined after annealing under these conditions. 12 refs., 4 figs., 1 tab

  2. United States Department of Energy projects related to reactor pressure vessel annealing optimization

    International Nuclear Information System (INIS)

    Rosinski, S.T.; Nakos, J.T.

    1993-01-01

    Light water reactor pressure vessel (RPV) material properties reduced by long-term exposure to neutron irradiation can be recovered through a thermal annealing treatment. This technique to extend RPV life, discussed in this report, provides a complementary approach to analytical methodologies to evaluate RPV integrity. RPV annealing has been successfully demonstrated in the former Soviet Union and on a limited basis by the US (military applications only). The process of demonstrating the technical feasibility of annealing commercial US RPVs is being pursued through a cooperative effort between the nuclear industry and the US Department of Energy (USDOE) Plant Lifetime Improvement (PLIM) Program. Presently, two projects are under way through the USDOE PLIM Program to demonstrate the technical feasibility of annealing commercial US RPVS, (1) annealing re-embrittlement data base development and (2) heat transfer boundary condition experiments

  3. Formation of a Polycrystalline Silicon Thin Film by Using Blue Laser Diode Annealing

    Science.gov (United States)

    Choi, Young-Hwan; Ryu, Han-Youl

    2018-04-01

    We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.

  4. Graphite moderator annealing of the experimental reactor for irradiation (0.5 MW)

    International Nuclear Information System (INIS)

    Oliveira Avila, Carlos Alberto de; Pires, Luis Fernando Goncalves

    1995-01-01

    This work describes an operational procedure for the annealing of the graphite moderator in the 0,5 MW Experimental Reactor for Irradiation. A theoretical methodology has been developed for calculating the temperature field during the annealing process. The equations for mass, momentum, and energy conservation for the coolant as well as for the energy conservation in the moderator are solved numerically. The energy stored in the graphite and released in the annealing is accounted for by the use of a modified source term in the energy conservation equation for the moderator. A good agreement has been found for comparisons of the calculations with annealing data from the BEPO reactor. The major parameters affecting annealing have also been determined. (author). 8 refs, 11 figs

  5. Effect of annealing induced residual stress on the resonance frequency of SiO2 microcantilevers

    Science.gov (United States)

    Balasubramanian, S.; Prabakar, K.; Tripura Sundari, S.

    2018-04-01

    In the present work, effect of residual stress, induced due to annealing of SiO2 microcantilevers (MCs) on their resonance frequency is studied. SiO2MCs of various dimensions were fabricated using direct laser writer & wet chemical etching method and were annealed at 800 °C in oxygen environment, post release. The residual stress was estimated from the deflection profile of the MCs measured using 3D optical microscope, before and after annealing. Resonance frequency of the MCs was measured using nano-vibration analyzer and was found to change after annealing. Further the frequency shift was found to depend on the MC dimensions. This is attributed to the large stress gradients induced by annealing and associated stiffness changes.

  6. Annealing of low-temperature GaAs studied using a variable energy positron beam

    International Nuclear Information System (INIS)

    Keeble, D.J.; Umlor, M.T.; Asoka-Kumar, P.; Lynn, K.G.; Cooke, P.W.

    1993-01-01

    The annihilation characteristics of monoenergetic positrons implanted in a molecular beam epitaxy layer of low-temperature (LT) GaAs annealed at temperatures from 300 to 600 degree C were measured. A gallium vacancy concentration of approximately 3x10 17 cm -3 is inferred for the as-grown material. The S parameter increased significantly upon anneal to 500 degree C. The dominant positron traps in samples annealed at and below 400 degree C are distinct from those acting for samples annealed to 500 or 600 degree C. The change in S parameter for the 600 degree C annealed sample compared to the GaAs substrate, S LT,600 =1.047S sub , is consistent with divacancies or larger open volume defects

  7. Annealing to Mitigate Pitting in Electropolished Niobium Coupons and SRF Cavities

    Energy Technology Data Exchange (ETDEWEB)

    Cooley, L.D.; Hahn, E.; Hicks, D.; Romanenko, A.; Schuessler, R.; Thompson, C.; /Fermilab

    2011-06-08

    Ongoing studies at Fermilab investigate whether dislocations and other factors instigate pitting during cavity electropolishing (EP), despite careful processing controls and the inherent leveling mechanism of EP itself. Here, cold-worked niobium coupons, which exhibited increased tendencies for pitting in our past study, were annealed in a high vacuum furnace and subsequently processed by EP. Laser confocal scanning microscopy and special defect counting algorithms were used to assess the population of pits formed. Hardness measurements indicated that annealing for 2 hours at 800 C produced recovery, whereas annealing for 12 hours at 600 C did not, as is consistent with known changes for cavities annealed in a similar way. The 800 C anneal was effective in some cases but not others, and we discuss reasons why tendencies for pitting remain. We discuss implications for cavities and continued work to understand pitting.

  8. Effect of Intermediate Annealing on Microstructure and Property of 5182 Aluminum Alloy Sheet for Automobile

    Directory of Open Access Journals (Sweden)

    WANG Yu

    2016-09-01

    Full Text Available Effect of intermediate annealing on the microstructure and properties of 5182 aluminum alloy sheet with full annealed state (5182-O was investigated by means of optical microscope, scanning electron microscope and universal testing machine. The results indicate that compared with 5182-O sheet without intermediate annealing, 5182-O sheet with intermediate annealing possesses too fine grain size, intermetallic compounds not broken enough, larger size intermetallic particles, less dispersed phase. Yield strength and ultimate tensile strength, work hardening exponent and normal anisotropy of plastic strain ratio decrease but planner anisotropy of plastic strain ratio increases. The mechanical properties and forming ability of 5182-O aluminum alloy sheet and its microstructure are not improved significantly after intermediate annealing.

  9. Annealing temperature dependence of the structures and properties of Co-implanted ZnO films

    International Nuclear Information System (INIS)

    Chen, Bin; Tang, Kun; Gu, Shulin; Ye, Jiandong; Huang, Shimin; Gu, Ran; Zhang, Yang; Yao, Zhengrong; Zhu, Shunming; Zheng, Youdou

    2014-01-01

    Highlights: • To avoid the forming of Co clusters and explore the origin of the magnetism, detailed investigation on the properties of the Co-implanted ZnO films with a rather low dose of 8 × 10 15 cm −2 and high implantation energy of 1 MeV were carried out. • The crystalline structure of the damaged region caused by ion-implantation has been recovered via the thermal annealing treatment at the temperature of 900 °C and above. • The low temperature magnetic hysteresis loops have indicated paramagnetism for the annealed films with weak ferromagnetic characteristics. • The zero-field cooling (ZFC) magnetization curves of the Co-implanted ZnO samples have varied from concave shape to convex one as the annealing temperature increased from 750 °C to 1000 °C. - Abstract: The effects of thermal annealing treatment on the structural, electrical, optical and magnetic properties of Co-implanted ZnO (0 0 0 1) films have been investigated in detail. The crystalline structure of the damaged region caused by ion implantation has been recovered via the thermal annealing at the temperature of 900 °C and above, and no Co clusters or its related oxide phases have been observed. The electrical and optical properties of the annealed films have shown strong dependence on the annealing temperature. The zero field cooling magnetization curves of the annealed films have varied from concave shape to convex one as the annealing temperature increased from 750 °C to 1000 °C, which are possibly tuned by the changes of the ratio of the itinerant carriers over the localized spin density. The low temperature magnetic hysteresis loops have indicated paramagnetic behavior for the annealed films with weak ferromagnetic characteristics. The ferromagnetism is attributed to the substituted Co 2+ ions and vacancy defects, while the paramagnetism could be induced by ionized interstitial Zn defects

  10. Annealing effects on the migration of ion-implanted cadmium in glassy carbon

    Energy Technology Data Exchange (ETDEWEB)

    Hlatshwayo, T.T., E-mail: thulani.hlatshwayo@up.ac.za [Physics Department, University of Pretoria, Pretoria (South Africa); Sebitla, L.D. [Physics Department, University of Pretoria, Pretoria (South Africa); Physics Department, University of Botswana, Gaborone (Botswana); Njoroge, E.G.; Mlambo, M.; Malherbe, J.B. [Physics Department, University of Pretoria, Pretoria (South Africa)

    2017-03-15

    The migration behaviour of cadmium (Cd) implanted into glassy carbon and the effects of annealing on radiation damage introduced by ion implantation were investigated. The glassy carbon substrates were implanted with Cd at a dose of 2 × 10{sup 16} ions/cm{sup 2} and energy of 360 keV. The implantation was performed at room temperature (RT), 430 °C and 600 °C. The RT implanted samples were isochronally annealed in vacuum at 350, 500 and 600 °C for 1 h and isothermally annealed at 350 °C up to 4 h. The as-implanted and annealed samples were characterized by Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Raman results revealed that implantation at room temperature amorphized the glassy carbon structure while high temperature implantations resulted in slightly less radiation damage. Isochronal annealing of the RT implanted samples resulted in some recrystallization as a function of increasing temperature. The original glassy carbon structure was not achieved at the highest annealing temperature of 600 °C. Diffusion of Cd in glassy carbon was already taking place during implantation at 430 °C. This diffusion of Cd was accompanied by significant loss from the surface during implantation at 600 °C. Isochronal annealing of the room temperature implanted samples at 350 °C for 1 h caused Cd to diffuse towards the bulk while isothermal annealing at 500 and 600 °C resulted in the migration of implanted Cd toward the surface accompanied by a loss of Cd from the surface. Isothermal annealing at 350 °C for 1 h caused Cd to diffuse towards the bulk while for annealing time >1 h Cd diffused towards the surface. These results were interpreted in terms of trapping and de-trapping of implanted Cd by radiation damage.

  11. Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

    KAUST Repository

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a

  12. A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

    KAUST Repository

    Park, Jihoon; Kurra, Narendra; AlMadhoun, M. N.; Odeh, Ihab N.; Alshareef, Husam N.

    2015-01-01

    We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films. The proposed two-step annealing scheme comprises the crystallization

  13. Implant Monitoring Measurements On Ultra Shallow Implants Before And After Anneal Using Photomodulated Reflection And Junction Photovoltage Measurement Techniques

    Science.gov (United States)

    Tallian, M.; Pap, A.; Mocsar, K.; Somogyi, A.; Nadudvari, Gy.; Kosztka, D.; Pavelka, T.

    2011-01-01

    Ultra shallow junctions are becoming widely used in the micro- and nanoelectronic devices, and novel measurement methods are needed to monitor the manufacturing processes. Photomodulated Reflection measurements before anneal and Junction Photovoltage-based sheet resistance measurements after anneal are non-contact, nondestructive techniques suitable for characterizing both the implantation and the annealing process. Tests verify that these methods are consistent with each other and by using them together, defects originating in the implantation and anneal steps can be separated.

  14. Influence of oxygen on the annealing of radioactive defects in germanium

    International Nuclear Information System (INIS)

    Gasimov, G.M.; Mustafayev, Yn.M.; Gasimova, V.G.

    2002-01-01

    The isochronal annealing were carried out in the wide temperature range, for the establishment of oxygen influence on the annealing of radioactive defects (Rd) in any radiated germanium samples, concentrated with oxygen up to concentration of 9.7·10 16 cm -3 . It is shown that the curves of isochronal annealing of one of the such samples 1, with primary current charge concentration of 9.0·10 cm 14 , radiated by integral electron flow of φ= 8.0·10 16 cm -3 , at 293 K and also the non-oxygen samples 2, with primary concentration of 1.7·10 cm -3 , radiated at above mentioned conditions. The sample 1 is converted by radiation to p-type, but the conversion not occur in samples 2. It is illustrated, that that there is two annealing stage at 340-430 K, for the samples 2, which in results takes place the complete annealing of the RD. At 300 K the annealing takes place in samples of 1, but at 340 K - the reverse annealing of RD. The sample was at compensated state in the temperature range of 360-400 K. An annealing of RD takes place again at 440 K and the sample re-converted its conductivity type. The reverse annealing at 480 K, and at about 510 K, the substantial annealing of the defects has been observed, which in results a sample restores it's primary parameters. The carried out experiments show that as in converted, and also in n-type be samples, Is observed the reverse annealing of RD, but the reverse annealing of current charge carriers in n-type samples is observed only at such conditions, of the integral flow of accelerated elections exceeds the primary concentration of current charge carriers about 4 time of magnitude (φ≥4n 0 ). Besides, the complete annealing of RD in germanium samples concentrated with oxygen, takes place at more high temperatures in comparison with the non-oxygen samples

  15. Tuning microstructure and magnetic properties of electrodeposited CoNiP films by high magnetic field annealing

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Chun; Wang, Kai [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Li, Donggang, E-mail: lidonggang@smm.neu.edu.cn [School of Metallurgy, Northeastern University, Shenyang 110819 (China); Lou, Changsheng [School of Materials Science and Engineering, Shenyang Ligong University, Shenyang 110159 (China); Zhao, Yue; Gao, Yang [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China); Wang, Qiang, E-mail: wangq@mail.neu.edu.cn [Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang 110819 (China)

    2016-10-15

    A high magnetic field (up to 12 T) has been used to anneal 2.6-µm-thick Co{sub 50}Ni{sub 40}P{sub 10} films formed by pulse electrodeposition. The effects of high magnetic field annealing on the microstructure and magnetic properties of CoNiP thin films have been investigated. It was found that a high magnetic field accelerated a phase transformation from fcc to hcp and enhanced the preferred hcp-(002) orientation during annealing. Compared with the films annealed without a magnetic field, annealing at 12 T decreased the surface particle size, roughness, and coercivity, but increased the saturation magnetization and remanent magnetization of CoNiP films. The out-of-plane coercivity was higher than that the in-plane for the as-deposited films. After annealing without a magnetic field, the out-of-plane coercivity was equal to that of the in-plane. However, the out-of-plane coercivity was higher than that of the in-plane when annealing at 12 T. These results indicate that high magnetic field annealing is an effective method for tuning the microstructure and magnetic properties of thin films. - Highlights: • High magnetic field annealing accelerated phase transformation from γ to ε. • High magnetic field annealing enhanced preferred hcp-(002) orientation. • High magnetic field annealing decreased particle size, roughness and coercivity. • High magnetic field annealing increased the saturation and remanent magnetization.

  16. Annealed silver-islands for enhanced optical absorption in organic solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Otieno, Francis, E-mail: frankotienoo@gmail.com [Material Physics Research Institute, School of Physics, University of the Witwatersrand, Private Bag 3, Wits, 2050Johannesburg (South Africa); Materials for Energy Research Group, University of the Witwatersrand, Private Bag 3, Wits, 2050 Johannesburg (South Africa); Airo, Mildred [School of Chemistry, University of the Witwatersrand, Private Bag 3, Wits, 2050 (South Africa); Ranganathan, Kamalakannan [School of Chemistry, University of the Witwatersrand, Private Bag 3, Wits, 2050 (South Africa); DST-NRF Centre of Strong Materials and the Molecular Sciences Institute, School of Chemistry, University of the Witwatersrand, 2193 Johannesburg (South Africa); Wamwangi, Daniel [Material Physics Research Institute, School of Physics, University of the Witwatersrand, Private Bag 3, Wits, 2050Johannesburg (South Africa); Materials for Energy Research Group, University of the Witwatersrand, Private Bag 3, Wits, 2050 Johannesburg (South Africa)

    2016-01-01

    Silver nano-islands are explored for enhancing optical absorption and photo-conversion efficiency in organic solar cells (OSCs) based on the surface plasmon resonance effect under diverse annealing conditions. Ag nano-islands have been deposited by RF magnetron sputtering at 15 W for 10 s and subsequently annealed between 100 °C–250 °C in air and Argon ambient. The optical properties of the reconstructed Ag islands demonstrate an increase and a blue shift in the absorption bands with increasing annealing temperature. This is the localized surface plasmon effect due to the Ag islands of diverse sizes, shapes and coverages. The increase in optical absorption with temperature is attributed to changes in island shape and density as collaborated by atomic force microscopy and TEM. As a proof of concept, an organic solar cell was characterized for current–voltage (I–V) measurements under dark and under solar simulated white light. Incorporation of annealed Ag islands has yielded an efficiency increment of between 4–24%. - Highlights: • RF Sputtering can be used to produce Ag NPs at low power. • Annealing enhances size, shape reconstruction as well as inter-particle separation. • Annealing in Argon ambient is more suitable than in air. • Ag NPs annealed at 250 °C enhances device absorption and PCE by up to 24%.

  17. Luminescence lifetimes in quartz: dependence on annealing temperature prior to beta irradiation

    International Nuclear Information System (INIS)

    Galloway, R.B.

    2002-01-01

    It is well known that the thermal history of a quartz sample influences the optically stimulated luminescence sensitivity of the quartz. It is found that the optically stimulated luminescence lifetime, determined from time resolved spectra obtained with pulsed stimulation, also depends on past thermal treatment. For samples at 20 deg. C during stimulation, the lifetime depends on beta dose and on duration of preheating at 220 deg. C prior to stimulation for quartz annealed at 600 deg. C and above, but is independent of these factors for quartz annealed at 500 deg. C and below. For stimulation at higher temperatures, the lifetime becomes shorter if the sample is held at temperatures above 125 deg. C during stimulation, in a manner consistent with thermal quenching. A single exponential decay is all that is required to fit the time resolved spectra for un-annealed quartz regardless of the temperature during stimulation (20-175 deg. C), or to fit the time resolved spectra from all samples held at 20 deg. C during stimulation, regardless of annealing temperature (20-1000 deg. C). An additional shorter lifetime is found for some combinations of annealing temperature and temperature during stimulation. The results are discussed in terms of a model previously used to explain thermal sensitisation. The luminescence lifetime data are best explained by the presence of two principal luminescence centres, their relative importance depending on the annealing temperature, with a third centre involved for limited combinations of annealing temperature and temperature during stimulation

  18. Resistivity behavior in isothermal annealing of Pd-H(D) alloys around 50 K

    International Nuclear Information System (INIS)

    Yamakawa, Kohji; Maeta, Hiroshi

    2004-01-01

    The behavior of electrical resistivity during hydrogen (deuterium) ordering is investigated for Pd-H(D) alloys of various hydrogen concentrations around 50 K. The disordered hydrogen (deuterium) atoms are introduced by quenching from 100 K into liquid helium immediately before isothermal annealings. The disordered atoms order by migration of the atoms during the heating-up of the specimens. On the isothermal curves of the resistivity in the high temperature range, the resistivity increases at first and then adopts a constant value dependent on the annealing temperature. On the other hand, the resistivity increases and then decreases during isothermal annealing in the low temperature range, nevertheless the ordering is progressing. The annealing time, at which the resistivity maximum appears, and the resistivity value of the maximum increase with decreasing annealing temperature. Furthermore, the decreasing resistivity after the maximum saturates to a value dependent on each annealing temperature. Therefore, it becomes clear that an equilibrium amount of ordering depends on the temperature and the resistivity increases in the early stage of hydrogen (deuterium) ordering and decreases in the later stage. The resistivity maximum in the isothermal annealing curve is caused by the nucleation and growth of ordered domains of hydrogen (deuterium) atoms

  19. Annealing temperature effect on self-assembled Au droplets on Si (111).

    Science.gov (United States)

    Sui, Mao; Li, Ming-Yu; Kim, Eun-Soo; Lee, Jihoon

    2013-12-13

    We investigate the effect of annealing temperature on self-assembled Au droplets on Si (111). The annealing temperature is systematically varied while fixing other growth parameters such as deposition amount and annealing duration clearly to observe the annealing temperature effect. Self-assembled Au droplets are fabricated by annealing from 50°C to 850°C with 2-nm Au deposition for 30 s. With increased annealing temperatures, Au droplets show gradually increased height and diameter while the density of droplets progressively decreases. Self-assembled Au droplets with fine uniformity can be fabricated between 550°C and 800°C. While Au droplets become much larger with increased deposition amount, the extended annealing duration only mildly affects droplet size and density. The results are systematically analyzed with cross-sectional line profiles, Fourier filter transform power spectra, height histogram, surface area ratio, and size and density plots. This study can provide an aid point for the fabrication of nanowires on Si (111).

  20. Annealing effects of carbon fiber-reinforced epoxy resin composites irradiated by electron beams

    International Nuclear Information System (INIS)

    Udagawa, Akira; Sasuga, Tuneo; Ito, Hiroshi; Hagiwara, Miyuki

    1987-01-01

    Carbon cloth-reinforced epoxy resin composites were irradiated with 2 MeV electrons at room temperature and then annealed in air for 2 h at temperatures up to 180 deg C. A considerable decrease in the three-point bending strength occurred when the irradiated composites were annealed in the temperature range of 115 - 135 deg C which is below the glass transition temperature T g of the matrix resin, while the bending strength remained unchanged up to 180 deg C for the unirradiated composites. In the dynamic viscoelastic spectra of the irradiated matrix, a new relaxation appeared at the temperature extending from 50 deg C to just below the matrix T g and disappeared on annealing for 2 h at 135 deg C. Annealing also decreased the concentration of free radicals existing stably in the irradiated matrix at room temperature. After annealing, a large amount of clacks and voids were observed in the fractography of the composites by scanning electron microscopy. These results indicate: (1) Annealing brings about rearrangement of the radiation-induced molecular chain scission in the matrix; (2) The bending strength of the irradiated composites decreased owing to the increased brittleness of the matrix by annealing. (author)

  1. Effects of annealing on the physical properties of therapeutic proteins during freeze drying process.

    Science.gov (United States)

    Lim, Jun Yeul; Lim, Dae Gon; Kim, Ki Hyun; Park, Sang-Koo; Jeong, Seong Hoon

    2018-02-01

    Effects of annealing steps during the freeze drying process on etanercept, model protein, were evaluated using various analytical methods. The annealing was introduced in three different ways depending on time and temperature. Residual water contents of dried cakes varied from 2.91% to 6.39% and decreased when the annealing step was adopted, suggesting that they are directly affected by the freeze drying methods Moreover, the samples were more homogenous when annealing was adopted. Transition temperatures of the excipients (sucrose, mannitol, and glycine) were dependent on the freeze drying steps. Size exclusion chromatography showed that monomer contents were high when annealing was adopted and also they decreased less after thermal storage at 60°C. Dynamic light scattering results exhibited that annealing can be helpful in inhibiting aggregation and that thermal storage of freeze-dried samples preferably induced fragmentation over aggregation. Shift of circular dichroism spectrum and of the contents of etanercept secondary structure was observed with different freeze drying steps and thermal storage conditions. All analytical results suggest that the physicochemical properties of etanercept formulation can differ in response to different freeze drying steps and that annealing is beneficial for maintaining stability of protein and reducing the time of freeze drying process. Copyright © 2017 Elsevier B.V. All rights reserved.

  2. Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

    International Nuclear Information System (INIS)

    Chai Xu-Zhao; Zhou Dong; Liu Bin; Xie Zi-Li; Han Ping; Xiu Xiang-Qian; Chen Peng; Lu Hai; Zhang Rong; Zheng You-Dou

    2015-01-01

    The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investigated by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence (YL) and blue luminescence (BL) bands dramatically decrease after annealing at 700°C. At the annealing temperature higher than 900°C, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen annealed GaN decreases at the temperature ranging from 900°C to 1000°C. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000°C. (paper)

  3. New heating schedule in hydrogen annealing furnace based on process simulation for less energy consumption

    International Nuclear Information System (INIS)

    Saboonchi, Ahmad; Hassanpour, Saeid; Abbasi, Shahram

    2008-01-01

    Cold rolled steel coils are annealed in batch furnaces to obtain desirable mechanical properties. Annealing operations involve heating and cooling cycles which take long due to high weight of the coils under annealing. To reduce annealing time, a simulation code was developed that is capable of evaluating more effective schedules for annealing coils during the heating process. This code is additionally capable of accurate determination of furnace turn-off time for different coil weights and charge dimensions. After studying many heating schedules and considering heat transfer mechanism in the annealing furnace, a new schedule with the most advantages was selected as the new operation conditions in the hydrogen annealing plant. The performance of all the furnaces were adjusted to the new heating schedule after experiments had been carried out to ensure the accuracy of the code and the fitness of the new operation condition. Comparison of similar yield of cold rolled coils over two months revealed that specific energy consumption of furnaces under the new heating schedule decreased by 11%, heating cycle time by 16%, and the hydrogen consumption by 14%

  4. New heating schedule in hydrogen annealing furnace based on process simulation for less energy consumption

    Energy Technology Data Exchange (ETDEWEB)

    Saboonchi, Ahmad [Department of Mechanical Engineering, Isfahan University of Technology, Isfahan 84154 (Iran); Hassanpour, Saeid [Rayan Tahlil Sepahan Co., Isfahan Science and Technology Town, Isfahan 84155 (Iran); Abbasi, Shahram [R and D Department, Mobarakeh Steel Complex, Isfahan (Iran)

    2008-11-15

    Cold rolled steel coils are annealed in batch furnaces to obtain desirable mechanical properties. Annealing operations involve heating and cooling cycles which take long due to high weight of the coils under annealing. To reduce annealing time, a simulation code was developed that is capable of evaluating more effective schedules for annealing coils during the heating process. This code is additionally capable of accurate determination of furnace turn-off time for different coil weights and charge dimensions. After studying many heating schedules and considering heat transfer mechanism in the annealing furnace, a new schedule with the most advantages was selected as the new operation conditions in the hydrogen annealing plant. The performance of all the furnaces were adjusted to the new heating schedule after experiments had been carried out to ensure the accuracy of the code and the fitness of the new operation condition. Comparison of similar yield of cold rolled coils over two months revealed that specific energy consumption of furnaces under the new heating schedule decreased by 11%, heating cycle time by 16%, and the hydrogen consumption by 14%. (author)

  5. a-Si:H crystallization from isothermal annealing and its dependence on the substrate used

    Energy Technology Data Exchange (ETDEWEB)

    Rojas-Lopez, M., E-mail: marlonrl@yahoo.com.mx [CIBA-Tlaxcala, Instituto Politecnico Nacional, Tepetitla, Tlax. 90700 (Mexico); Orduna-Diaz, A.; Delgado-Macuil, R.; Gayou, V.L.; Bibbins-Martinez, M. [CIBA-Tlaxcala, Instituto Politecnico Nacional, Tepetitla, Tlax. 90700 (Mexico); Torres-Jacome, A.; Trevino-Palacios, C.G. [INAOE, Tonantzintla, Puebla, Pue. 72000 (Mexico)

    2010-10-25

    We present hydrogenated amorphous silicon (a-Si:H) films which were deposited on two different substrates (glass and mono-crystalline silicon) after an isothermal annealing treatment at 250 deg. C for up to 14 h. The annealed amorphous films were analyzed using atomic force microscopy, Raman and FTIR spectroscopy. Films deposited on glass substrate experienced an amorphous-crystalline phase transition after annealing because of the metal-induced crystallization effect, reaching approximately 70% conversion after 14 h of annealing. An absorption frequency of the TO-phonon mode that varies systematically with the substoichiometry of the silicon oxide in the 1046-1170 cm{sup -1} region was observed, revealing the reactivity of the film with the annealing time. For similar annealing time, films deposited on mono-crystalline silicon substrate remained mainly amorphous with minimal Si-crystalline formation. Therefore, the crystalline formations and the shape of the films surfaces depends on the annealing time as well as on the substrate employed during the deposition process of the a-Si:H film.

  6. Study of grain structure evolution during annealing of a twin-roll-cast Mg alloy

    International Nuclear Information System (INIS)

    Tripathi, A.; Samajdar, I.; Nie, J.F.; Tewari, A.

    2016-01-01

    The evolution of microstructure under static annealing was studied for mid-thickness section of a twin-roll-cast (TRC) magnesium alloy. Annealing was performed at 300 °C and 500 °C for different times. Microstructural evolution was quantitatively analyzed, from optical micrographs, using grain path envelope analysis. Additional information from electron backscatter diffraction (EBSD) was used for addressing the possible mechanism(s). It was found that the TRC structure had a bimodal grain size, which was preserved even after annealing at 300 °C. However, the annealing at 500 °C led to a unimodal grain size. This difference in the grain size distribution created a contrasting behavior in the normalized standard deviations. This was primarily attributed to a competition between recovery and recrystallization, and their respective dominance at 300° and 500 °C. A deformation induced recrystallization recovery (DIRR) model was proposed. The proposed model could successfully address the experimental microstructural evolution. - Highlights: • Annealing of twin roll cast (TRC) magnesium alloy was done at temperatures of 300 °C and 500 °C. • TRC had bimodal structure. Bimodality preserved for annealing at 300 °C. Annealing at 500 °C led to unimodal structure. • Grain evolution was described based on the competition between recovery and recrystallization. • Deformation induced recrystallization recovery (DIRR) mechanistic model was developed.

  7. Microstructural evolution and pitting resistance of annealed lean duplex stainless steel UNS S32304

    International Nuclear Information System (INIS)

    Zhang Ziying; Han Dong; Jiang Yiming; Shi Chong; Li Jin

    2012-01-01

    Highlights: ► The relationship between pitting corrosion resistance and annealing temperature for UNS S32304 was systemically studied. ► The specimens annealed at 1080 °C for 1 h, quenched in water exhibit the best pitting corrosion resistance. ► The relationship between microstructural evolution and pitting resistance of annealed UNS S32304 was discussed in detail. ► The pitting corrosion resistance is consistent with pitting resistance equivalent number of weaker phase for UNS S32304 alloy. - Abstract: The effect of annealing temperature in the range from 1000 to 1200 °C on the pitting corrosion behavior of duplex stainless steel UNS S32304 was investigated by the potentiodynamic polarization and potentiostatic critical pitting temperature techniques. The microstructural evolution and pit morphologies were studied using a scanning electron microscopy with energy dispersive X-ray spectroscopy. The results demonstrated that the nucleation of metastable pits transformed from austenite phase to ferrite phase with the increasing annealing temperature. As the annealing temperature increased, the pitting corrosion resistance firstly increased and then decreased. The highest pitting corrosion resistance was obtained at 1080 °C with the highest critical pitting temperature value and pitting nucleation resistance. The results could be well explained by the microstructural evolution of ferrite and austenite phases induced by annealing treatment.

  8. Toward the understanding of annealing effects on (GaIn)2O3 films

    International Nuclear Information System (INIS)

    Zhang, Fabi; Jan, Hideki; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Nagaoka, Takashi; Arita, Makoto; Guo, Qixin

    2015-01-01

    (GaIn) 2 O 3 films with nominal indium content of 0.3 deposited at room temperature by pulsed laser deposition have been annealed in different gas ambient (N 2 , vacuum, Ar, O 2 ) and temperatures (700–1000 °C) in order to understand the annealing effects. X-ray diffraction and X-ray rocking curve revealed that the film annealed at 800 °C under O 2 ambient has best crystallinity. X-ray photoelectron spectroscopy analysis indicated that oxygen ambient annealing has greatly helped on decreasing the oxygen vacancy. (GaIn) 2 O 3 films with different nominal indium content varying from 0.2 to 0.7 annealed at 800 °C under O 2 ambient also showed high crystal quality, improved optical transmittance, and smooth surface. - Highlights: • (GaIn) 2 O 3 films have been annealed in different gas ambient and temperature. • Only oxygen ambient can crystallize (GaIn) 2 O 3 film. • Film annealed at 800 °C appears best crystal quality. • High quality films were obtained with wide indium content varying from 0.2 to 0.7

  9. PERBANDINGAN KINERJA ALGORITMA GENETIKA DAN SIMULATED ANNEALING UNTUK MASALAH MULTIPLE OBJECTIVE PADA PENJADWALAN FLOWSHOP

    Directory of Open Access Journals (Sweden)

    I Gede Agus Widyadana

    2002-01-01

    Full Text Available The research is focused on comparing Genetics algorithm and Simulated Annealing in the term of performa and processing time. The main purpose is to find out performance both of the algorithm to solve minimizing makespan and total flowtime in a particular flowshop system. Performances of the algorithms are found by simulating problems with variation of jobs and machines combination. The result show the Simulated Annealing is much better than the Genetics up to 90%. The Genetics, however, only had score in processing time, but the trend that plotted suggest that in problems with lots of jobs and lots of machines, the Simulated Annealing will run much faster than the Genetics. Abstract in Bahasa Indonesia : Penelitian ini difokuskan pada pembandingan algoritma Genetika dan Simulated Annealing ditinjau dari aspek performa dan waktu proses. Tujuannya adalah untuk melihat kemampuan dua algoritma tersebut untuk menyelesaikan problem-problem penjadwalan flow shop dengan kriteria minimasi makespan dan total flowtime. Kemampuan kedua algoritma tersebut dilihat dengan melakukan simulasi yang dilakukan pada kombinasi-kombinasi job dan mesin yang berbeda-beda. Hasil simulasi menunjukan algoritma Simulated Annealing lebih unggul dari algoritma Genetika hingga 90%, algoritma Genetika hanya unggul pada waktu proses saja, namun dengan tren waktu proses yang terbentuk, diyakini pada problem dengan kombinasi job dan mesin yang banyak, algoritma Simulated Annealing dapat lebih cepat daripada algoritma Genetika. Kata kunci: Algoritma Genetika, Simulated Annealing, flow shop, makespan, total flowtime.

  10. Annealing effects on electron-beam evaporated Al2O3 films

    International Nuclear Information System (INIS)

    Shang Shuzhen; Chen Lei; Hou Haihong; Yi Kui; Fan Zhengxiu; Shao Jianda

    2005-01-01

    The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2 O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 deg. C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 deg. C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given

  11. Annealing effects on electron-beam evaporated Al 2O 3 films

    Science.gov (United States)

    Shuzhen, Shang; Lei, Chen; Haihong, Hou; Kui, Yi; Zhengxiu, Fan; Jianda, Shao

    2005-04-01

    The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 °C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 °C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given.

  12. Annealing effects on the photoresponse properties of CdSe nanocrystal thin films

    International Nuclear Information System (INIS)

    Lou Shiyun; Zhou Changhua; Wang Hongzhe; Shen Huaibin; Cheng Gang; Du Zuliang; Zhou, Shaomin; Li Linsong

    2011-01-01

    Highlights: → The as-prepared CdSe nanocrystal films were treated at 500 deg. C for 3 h under continuous N 2 . → Annealing process removed the organic capping completely and eliminated oxide on the CdSe surface. → Thermal annealing resulted the increase of the crystallite sizes and necking the NCs. → The photoresponse speed of the CdSe nanocrystal films was improved. - Abstract: The photoresponse properties of the as-prepared and annealed close-packed CdSe nanocrystal (NC) films were investigated under laser illumination by Kelvin probe force microscopy. The annealing process improved the photoresponse speed of the CdSe NC films. The work function of the annealed CdSe NC films changed more rapidly than that of the non-annealed film in air at room temperature. Combined with X-ray photoelectron spectroscopy measurements and thermogravimetric analysis, the observed phenomena can be interpreted that annealing process removed the organic capping agents completely and eliminated oxide on the CdSe surface, which formed the tunnel barrier between NCs in the CdSe NC films. Consequently, it improved the separation rate of photoelectric charges and thus provided high speed photoresponse.

  13. Buffer layer annealing effects on the magnetization reversal process in Pd/Co/Pd systems

    International Nuclear Information System (INIS)

    Fassatoui, A.; Belhi, R.; Vogel, J.; Abdelmoula, K.

    2016-01-01

    We have investigated the effect of annealing the buffer layer on the magnetization reversal behavior in Pd/Co/Pd thin films using magneto-optical Kerr microscopy. It was found that annealing the buffer layer at 150 °C for 1 h decreases the coercivity and increases the saturation magnetization and the effective magnetic anisotropy constant. This study also shows that the annealing induces a change of the magnetization reversal from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation. This result demonstrates that the main effect of annealing the buffer layer is to decrease the domain wall pinning in the Co layer, favoring the domain wall propagation mode. - Highlights: • The buffer layer surface morphology changes upon annealing of the buffer layer. • The coercivity decreases while the saturation magnetization and the effective anisotropy increase with the annealing of the buffer layer. • The reversal process changes from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation when annealing the buffer layer.

  14. Annealing effects on magnetic properties of silicone-coated iron-based soft magnetic composites

    International Nuclear Information System (INIS)

    Wu Shen; Sun Aizhi; Zhai Fuqiang; Wang Jin; Zhang Qian; Xu Wenhuan; Logan, Philip; Volinsky, Alex A.

    2012-01-01

    This paper focuses on novel iron-based soft magnetic composites synthesis utilizing high thermal stability silicone resin to coat iron powder. The effect of an annealing treatment on the magnetic properties of synthesized magnets was investigated. The coated silicone insulating layer was characterized by scanning electron microscopy and energy dispersive X-ray spectroscopy. Silicone uniformly coated the powder surface, resulting in a reduction of the imaginary part of the permeability, thereby increasing the electrical resistivity and the operating frequency of the synthesized magnets. The annealing treatment increased the initial permeability, the maximum permeability, and the magnetic induction, and decreased the coercivity. Annealing at 580 °C increased the maximum permeability by 72.5%. The result of annealing at 580 °C shows that the ferromagnetic resonance frequency increased from 2 kHz for conventional epoxy resin coated samples to 80 kHz for the silicone resin insulated composites. - Highlights: ► Silicone uniformly coated the powder, increased the operating frequency of SMCs. ► The annealing treatment increased the DC properties of SMCs. ► Annealing at 580 °C increased the maximum permeability by 72.5%. ► Compared with epoxy coated, the SMCs had higher resistivity annealing at 580 °C.

  15. Irradiation, annealing, and reirradiation research in the ORNL heavy-section steel irradiation program

    International Nuclear Information System (INIS)

    Nanstad, R.K.; Iskander, S.K.; McCabe, D.E.; Sokolov, M.A.

    1997-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPV) is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. This paper summarizes experimental results from work performed as part of the Heavy-Section Steel Irradiation (HSSI) Program managed by Oak Ridge National Laboratory (ORNL) for the U.S. Nuclear Regulatory Commission. The HSSI Program focuses on annealing and re-embrittlement response of materials which are representative of those in commercial RPVs and which are considered to be radiation-sensitive. Experimental studies include (1) the annealing of materials in the existing inventory of previously irradiated materials, (2) reirradiation of previously irradiated/annealed materials in a collaborative program with the University of California, Santa Barbara (UCSB), (3) irradiation/annealing/reirradiation of U.S. and Russian materials in a cooperative program with the Russian Research Center-Kurchatov Institute (RRC-KI), (4) the design and fabrication of an irradiation/anneal/reirradiation capsule and facility for operation at the University of Michigan Ford Reactor, (5) the investigation of potential for irradiation-and/or thermal-induced temper embrittlement in heat-affected zones (HAZs) of RPV steels due to phosphorous segregation at grain boundaries, and (6) investigation of the relationship between Charpy impact toughness and fracture toughness under all conditions of irradiation, annealing, and reirradiation

  16. Germanium nanoislands grown by radio frequency magnetron sputtering: Annealing time dependent surface morphology and photoluminescence

    International Nuclear Information System (INIS)

    Samavati, Alireza; Othaman, Z.; Ghoshal, S. K.; Amjad, R. J.

    2013-01-01

    Structural and optical properties of ∼ 20 nm Ge nanoislands grown on Si(100) by radio frequency (rf) magnetron sputtering under varying annealing conditions are reported. Rapid thermal annealing at a temperature of 600°C for 30 s, 90 s, and 120 s are performed to examine the influence of annealing time on the surface morphology and photoluminescence properties. X-ray diffraction spectra reveal prominent Ge and GeO 2 peaks highly sensitive to the annealing time. Atomic force microscope micrographs of the as-grown sample show pyramidal nanoislands with relatively high-density 10 11 cm −2) ). The nanoislands become dome-shaped upon annealing through a coarsening process mediated by Oswald ripening. The room temperature photoluminescence peaks for both as-grown 3.29 eV) and annealed 3.19 eV) samples consist of high intensity and broad emission, attributed to the effect of quantum confinement. The red shift (∼0.10 eV) of the emission peak is attributed to the change in the size of the Ge nanoislands caused by annealing. Our easy fabrication method may contribute to the development of Ge nanostructure-based optoelectronics. (interdisciplinary physics and related areas of science and technology)

  17. The Effect of Annealing Temperature on Nickel on Reduced Graphene Oxide Catalysts on Urea Electrooxidation

    International Nuclear Information System (INIS)

    Glass, Dean E.; Galvan, Vicente; Prakash, G.K. Surya

    2017-01-01

    Highlights: •Nickel was reduced on graphene oxide and annealed under argon from 300 to 700 °C. •Nickel was oxidized from the removal of oxygen groups on the graphene oxide. •Higher annealed catalysts displayed decreased urea electrooxidation currents. •Micro direct urea/hydrogen peroxide fuel cells were employed for the first time. •Ni/rGO catalysts displayed enhanced fuel cell performance than the bare nickel. -- Abstract: The annealing temperature effects on nickel on reduced graphene oxide (Ni/rGO) catalysts for urea electrooxidation were investigated. Nickel chloride was directly reduced in an aqueous solution of graphene oxide (GO) followed by annealing under argon at 300, 400, 500, 600, and 700 °C, respectively. X-ray Diffraction (XRD) patterns revealed an increase in the crystallite size of the nickel nanoparticles while the Raman spectra displayed an increase in the graphitic disorder of the reduced graphene oxide at higher annealing temperatures due to the removal of oxygen functional groups. The Ni/rGO catalysts annealed at higher temperatures displayed oxidized nickel surface characteristics from the Ni 2p X-ray Photoelectron Spectra (XPS) due to the oxidation of the nickel from the oxygen functional groups in the graphitic lattice. In the half-cell testing, the onset potential of urea electrooxidation decreased while the urea electrooxidation currents decreased as the annealing temperature was increased. The nickel catalyst annealed at 700 °C displayed a 31% decrease in peak power density while the catalyst annealed at 300 °C displayed a 13% increase compared with the unannealed Ni/rGO catalyst in the micro direct urea/hydrogen peroxide fuel cells tests.

  18. Evolution of mechanical properties of ultrafine grained 1050 alloy annealing with electric current

    International Nuclear Information System (INIS)

    Cao, Yiheng; He, Lizi; Zhang, Lin; Zhou, Yizhou; Wang, Ping; Cui, Jianzhong

    2016-01-01

    The tensile properties and microstructures of 1050 aluminum alloy prepared by equal channel angular pressing at cryogenic temperature (cryoECAP) after electric current annealing at 90–210 °C for 3 h were investigated by tensile test, electron back scattering diffraction (EBSD) and transmission electron microscopy (TEM). An unexpected annealing-induced strengthening phenomenon occurs at 90–210 °C, due to a significant decrease in the density of mobile dislocations after annealing, and thus a higher yield stress is required to nucleate alternative dislocation sources during tensile test. The electric current can enhance the motion of dislocations, lead to a lower dislocation density at 90–150 °C, and thus shift the peak annealing temperature from 150 °C to 120 °C. Moreover, the electric current can promote the migration of grain boundaries at 150–210 °C, result in a larger grain size at 150 °C and 210 °C, and thus causes a lower yield stress. The sample annealed with electric current has a lower uniform elongation at 90–120 °C, and the deviation in the uniform elongation between samples annealed without and with electric current becomes smaller at 150–210 °C. - Highlights: • An unexpected annealing-induced strengthening phenomenon occurs at 90–210 °C. • The d. c. current can enhance the motion of dislocations at 90–150 °C, and thus shift the peak annealing temperature from 150 °C to 120 °C. • The d. c. current can promote the grain growth at 150–210 °C, and thus cause a lower yield stress. • The DC annealed sample has a lower uniform elongation at 90–120 °C.

  19. ACTIVITY-BASED COSTING DAN SIMULATED ANNEALING UNTUK PENCARIAN RUTE PADA FLEXIBLE MANUFACTURING SYSTEMS

    Directory of Open Access Journals (Sweden)

    Gregorius Satia Budhi

    2003-01-01

    Full Text Available Flexible Manufacturing System (FMS is a manufacturing system that is formed from several Numerical Controlled Machines combine with material handling system, so that different jobs can be worked by different machines sequences. FMS combine the high productivity and flexibility of Transfer Line and Job Shop manufacturing system. In this reasearch, Activity-Based Costing(ABC approach was used as the weight to search the operation route in the proper machine, so that the total production cost can be optimized. The search method that was used in this experiment is Simulated Annealling, a variant form Hill Climbing Search method. An ideal operation time to proses a part was used as the annealling schedule. From the empirical test, it could be proved that the use of ABC approach and Simulated Annealing to search the route (routing process can optimize the Total Production Cost. In the other hand, the use of ideal operation time to process a part as annealing schedule can control the processing time well. Abstract in Bahasa Indonesia : Flexible Manufacturing System (FMS adalah sistem manufaktur yang tersusun dari mesin-mesin Numerical Control (NC yang dikombinasi dengan Sistem Penanganan Material, sehingga job-job berbeda dikerjakan oleh mesin-mesin dengan alur yang berlainan. FMS menggabungkan produktifitas dan fleksibilitas yang tinggi dari Sistem Manufaktur Transfer Line dan Job Shop. Pada riset ini pendekatan Activity-Based Costing (ABC digunakan sebagai bobot / weight dalam pencarian rute operasi pada mesin yang tepat, untuk lebih mengoptimasi biaya produksi secara keseluruhan. Adapun metode Searching yang digunakan adalah Simulated Annealing yang merupakan varian dari metode searching Hill Climbing. Waktu operasi ideal untuk memproses sebuah part digunakan sebagai Annealing Schedulenya. Dari hasil pengujian empiris dapat dibuktikan bahwa penggunaan pendekatan ABC dan Simulated Annealing untuk proses pencarian rute (routing dapat lebih

  20. Nd:YAG laser annealing investigation of screen-printed CIGS layer on PET: Layer annealing method for photovoltaic cell fabrication process

    KAUST Repository

    Alsaggaf, Ahmed

    2014-06-01

    Cu(In, Ga)Se2 (CIGS) ink was formulated from CIGS powder, polyvinyl butyral PVB, terpineol and polyester/polyamine co-polymeric dispersant KD-1. Thin films with different thicknesses were deposited on PET substrate using screen-printing followed by heat treatment using a Nd:YAG laser. The structure and morphology of the heated thin films were studied. The characterization of the CIGS powder, ink, and film was done using TGA, SEM, FIB, EDS, and XRD. TGA analysis shows that the CIGS ink is drying at 200 °C, which is well below the decomposition temperature of the PET substrate. It was observed by SEM that 20 pulses of 532nm and 60 mJ/cm2 Nd:YAG laser annealing causes atomic diffusion on the near surface area. Furthermore, FIB cross section images were utilized to monitor the effect of laser annealing in the depth of the layer. Laser annealing effects were compared to as deposited layer using XRD in reference to CIGS powder. The measurement shows that crystallinity of deposited CIGS is retained while EDS quantification and atomic ratio result in gradual loss of selenium as laser energy increases. The laser parameters were tuned in an effort to utilize laser annealing of screen-printed CIGS layer as a layer annealing method for solar cell fabrication process.

  1. Sensitivity enhancement using annealed polymer optical fibre based sensors for pressure sensing applications

    DEFF Research Database (Denmark)

    Pospori, A.; Marques, C. A. F.; Saez-Rodriguez, D.

    2016-01-01

    for that investigation was an unexpected behaviour observed in an array of sensors which were used for liquid level monitoring. One sensor exhibited much lower pressure sensitivity and that was the only one that was not annealed. To further investigate the phenomenon, additional sensors were photo...... sensitivity of the devices. This can provide better performing sensors for use in stress, force and pressure sensing applications.......Thermal annealing can be used to induce a permanent negative Bragg wavelength shift for polymer fibre grating sensors and it was originally used for multiplexing purposes. Recently, researchers showed that annealing can also provide additional benefits, such as strain and humidity sensitivity...

  2. Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

    Science.gov (United States)

    Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

  3. Electric field effects on radiation defects annealing in p-InP

    International Nuclear Information System (INIS)

    Sibille, A.

    1983-01-01

    Annealing experiments have been performed on electron irradiated Schottky diodes on p-InP. They show a strong influence of the applied reverse bias during annealing on the recovery of the free holes concentration, as well as on the disappearance of the dominant radiation induced hole traps detected by deep level transient spectroscopy (DLTS). Compensating defects are observed to drift under the action of the electric field and accumulate at the edge of the depleted zone, while the main hole traps created by the irradiation anneal faster when empty of holes or subjected to an electric field. (author)

  4. Annealing of TiO2 Films Deposited on Si by Irradiating Nitrogen Ion Beams

    International Nuclear Information System (INIS)

    Yokota, Katsuhiro; Yano, Yoshinori; Miyashita, Fumiyoshi

    2006-01-01

    Thin TiO2 films were deposited on Si at a temperature of 600 deg. C by an ion beam assisted deposition (IBAD) method. The TiO2 films were annealed for 30 min in Ar at temperatures below 700 deg. C. The as-deposited TiO2 films had high permittivities such 200 εo and consisted of crystallites that were not preferentially oriented to the c-axis but had an expanded c-axis. On the annealed TiO2 films, permittivities became lower with increasing annealing temperature, and crystallites were oriented preferentially to the (110) plane

  5. Thermal annealing of gamma irradiated ammonium chloride (Preprint no. RC-37)

    International Nuclear Information System (INIS)

    Kalkar, C.D.; Lala, Neeta

    1991-01-01

    Ammonium chloride produces N 2 H 4 + and Cl 2 as the main radiolytic products on gamma irradiation. Thermal annealing has a marked effect on the stability of N 2 H 4 + and Cl 2 . During the thermal annealing the chemical yield of nitrite and iodine was studied by dissolving irradiated ammonium chloride in aqueous sodium nitrate and potassium iodide respectively. The yield of iodine in isochronal annealing showed an exponential behaviour with temperature while that of nitrite showed a decrease and then increases at higher temperatures. The results are explained on the basis of dissociation and recombination of N 2 H 4 + with temperature. (author). 3 refs., 2 figs

  6. Simulation of short-term annealing of displacement cascades in FCC metals

    International Nuclear Information System (INIS)

    Heinisch, H.L.; Doran, D.G.; Schwartz, D.M.

    1980-01-01

    Computer models have been developed for the simulation of high energy displacement cascades. The objective is the generation of defect production functions for use in correlation analysis of radiation effects in fusion reactor materials. In particular, the stochastic cascade annealing simulation code SCAS has been developed and used to model the short-term annealing behavior of simulated cascades in FCC metals. The code is fast enough to make annealing of high energy cascades practical. Sets of cascades from 5 keV to 100 keV in copper were generated by the binary collision code MARLOWE

  7. Effects of annealing time on the structure, morphology, and stress of gold–chromium bilayer film

    International Nuclear Information System (INIS)

    Zhang Hong; Wang Hu; Huang Hao-Peng; Jin Yun-Xia; Kong Fang-Yu; Cui Yun

    2016-01-01

    In this work, a 200-nm-thick gold film with a 10-nm-thick chromium layer used as an adhesive layer is fabricated on fused silica by the electron beam evaporation method. The effects of annealing time at 300 °C on the structure, morphology and stress of the film are studied. We find that chromium could diffuse to the surface of the film by formatting a solid solution with gold during annealing. Meanwhile, chromium is oxidized on the surface and diffused downward along the grain grooves in the gold film. The various operant mechanisms that change the residual stresses of gold films for different annealing times are discussed. (paper)

  8. Study of phosphorus implanted and annealed silicon by electrical measurements and ion channeling technique

    CERN Document Server

    Hadjersi, T; Zilabdi, M; Benazzouz, C

    2002-01-01

    We investigated the effect of annealing temperature on the electrical activation of phosphorus implanted into silicon. The measurements performed using spreading resistance, four-point probe and ion channeling techniques have allowed us to establish the existence of two domains of variation of the electrical activation (350-700 deg. C) and (800-1100 deg. C). The presence of reverse annealing and the annihilation of defects have been put in a prominent position in the first temperature range. It has been shown that in order to achieve a complete electrical activation, the annealing temperature must belong to the second domain (800-1100 deg. C).

  9. Thermal annealing of recoil 56Mn in strontium permanganate under (n,γ) process

    International Nuclear Information System (INIS)

    Mishra, Shuddhodan P.; Vijaya

    2002-01-01

    Chemical stabilization of recoil 56 Mn in strontium permanganate (hydrous and anhydrous) has been investigated with a special reference to pre-and post-activation thermal annealing treatments. The retention of 56 Mn in neutron irradiated strontium permanganate showed significant variation on thermal annealing in both pre-and post-activation heated target. The recoil re-entry process obeys simple first order kinetics and the activation energy deduced for thermal annealing process is very low as computed by classical Arrhenius plots. The results observed are discussed in the light of existing ideas for understanding the recoil stabilization mechanism of parent reformation and the nature of precursors in permanganates. (author)

  10. Annealing Effect on the Photoelectrochemical Properties of BiVO_4 Thin Film Electrodes

    International Nuclear Information System (INIS)

    Siti Nur Farhana Mohd Nasir; Mohd Asri Mat Teridi; Mehdi Ebadi; Sagu, J.S.

    2015-01-01

    Monoclinic bismuth vanadate (BiVO_4) thin film electrodes were fabricated on fluorine-doped tin oxide via aerosol-assisted chemical vapour deposition (AACVD). Annealing and without annealing effect of thin films were analysed by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), ultraviolet-visible spectrophotometry (UV-Vis) and current voltage measurement. All BiVO_4 thin films showed an anodic photocurrent. The sample of BiVO_4 annealed at 400 degree Celsius exhibited the highest photocurrent density of 0.44 mAcm"-"2 vs. Ag/ AgCl at 1.23 V. (author)

  11. Analysis of the absorption coefficient by annealing in carbon implanted Nd: YVO4

    International Nuclear Information System (INIS)

    Sanchez-Morales, M E; Vazquez, G V; Lifante, G; Cantelar, E; Rickards, J; Trejo-Luna, R

    2011-01-01

    Low loss in optical waveguides is very important in order to achieve high laser efficiency. Waveguide fabrication by ion implantation generates color centers, leading to absorption losses which can be reduced by annealing; however, this process may eliminate the waveguide and hence it is necessary to consider both the optimum annealing time and temperature. This work reports the behavior of the absorption coefficient by successive annealing steps in Nd:YVO 4 implanted with a dose of 5xl0 14 ions/cm 2 .

  12. Proximity annealing of sulfur-implanted gallium arsenide using a strip heater

    International Nuclear Information System (INIS)

    Banerjee, S.; Baker, J.

    1985-01-01

    A graphite strip heater has been employed for rapid (-- 30 s) thermal annealing (RTA), at temperatures between 850 and 1150 0 C, of Cr-doped GaAs implanted with 120 keV 32 S + with doses between 10 13 and 10 15 cm -2 . In order to minimize the incongruent evaporation of As, proximity anneals were employed by protecting the implanted samples with GaAs cover pieces. RTA yields electrical activation and donor mobilities better than or comparable to furnace annealing, with less redistribution of the implanted S and background Cr. (author)

  13. Pulsed electron-beam annealing of selenium-implanted gallium arsenide

    International Nuclear Information System (INIS)

    Inada, T.; Tokunaga, K.; Taka, S.

    1979-01-01

    Electrical properties of selenium-implanted gallium arsenide annealed by a single shot of high-power pulsed electron beams have been investigated by differential Hall-effect and sheet-resistivity measurements. It has been shown that higher electrical activation of implanted selenium can be obtained after electron-beam annealing at an incident energy density of 1.2 J/cm 2 , independent of heating of GaAs substrate during implantation. Measured carrier concentrations exhibit uniformly distributed profiles having carrier concentrations of 2--3 x 10 19 /cm 3 , which is difficult to realize by conventional thermal annealing

  14. Effect of cold working and annealing on stress corrosion cracking of AISI 304 stainless steel

    International Nuclear Information System (INIS)

    Yeon, Y.M.; Kwun, S.I.

    1983-01-01

    A study was made of the effects of cold working and annealing on the stress corrosion cracking of AISI 304 stainless steel in boiling 42% MgCl 2 solution. When the 60% or 76% of yield stress was applied, the resistance to SCC showed maximum at 30% of cold work. However, when the same load was applied to the annealed specimens after cold working, the resistance to SCC decreased abruptly at 675degC annealing. The fracture mode changed mode change mixed → intergranular → transgranular as the amount of cold work increased. (Author)

  15. Resistance and magnetoresistance of annealed amorphous carbon films containing Fe3C nanograins

    International Nuclear Information System (INIS)

    Lee Yuhua; Han Taichun; Wur, C.-S.

    2004-01-01

    The temperature-dependent resistance and the field-dependent magnetoresistance were measured for films annealed at temperatures from 250 deg. C to 550 deg. C for a period of 60 min. Results of temperature-dependent resistance show electrical tunneling conductance in the films annealed at T a =250 deg. C and 350 deg. C only. The largest magnetoresistance ratio (MR) of 23% at temperature T=2 K was observed for T a =350 deg. C. The variations of both the temperature dependence of resistance and the magnetoresistance with the annealing temperature are discussed

  16. Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

    DEFF Research Database (Denmark)

    Shayesteh, Maryam; O' Connell, Dan; Gity, Farzan

    2014-01-01

    In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n +/p junctions. Using LTA, high carrier...... implant conditions. On the other hand, RTA revealed very high I on/I off ratio ∼ 107 and n ∼ 1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance....

  17. Finding a Hadamard matrix by simulated annealing of spin vectors

    Science.gov (United States)

    Bayu Suksmono, Andriyan

    2017-05-01

    Reformulation of a combinatorial problem into optimization of a statistical-mechanics system enables finding a better solution using heuristics derived from a physical process, such as by the simulated annealing (SA). In this paper, we present a Hadamard matrix (H-matrix) searching method based on the SA on an Ising model. By equivalence, an H-matrix can be converted into a seminormalized Hadamard (SH) matrix, whose first column is unit vector and the rest ones are vectors with equal number of -1 and +1 called SH-vectors. We define SH spin vectors as representation of the SH vectors, which play a similar role as the spins on Ising model. The topology of the lattice is generalized into a graph, whose edges represent orthogonality relationship among the SH spin vectors. Starting from a randomly generated quasi H-matrix Q, which is a matrix similar to the SH-matrix without imposing orthogonality, we perform the SA. The transitions of Q are conducted by random exchange of {+, -} spin-pair within the SH-spin vectors that follow the Metropolis update rule. Upon transition toward zeroth energy, the Q-matrix is evolved following a Markov chain toward an orthogonal matrix, at which the H-matrix is said to be found. We demonstrate the capability of the proposed method to find some low-order H-matrices, including the ones that cannot trivially be constructed by the Sylvester method.

  18. The mechanical features of isothermally annealed duplex stainless steel

    International Nuclear Information System (INIS)

    Sustarsic, B.; Godec, M.; Jenko, M.; Tuma, J.V.; Marini, B.; Toffolon Masclet, C.; Forget, P.

    2011-01-01

    Cast duplex stainless steels are frequently used for structural parts of nuclear power plants and other thermo-energetic objects. The ageing behaviour of the cast 258 type stainless steel has been studied in the frame of IMT Slovenia and CEA bilateral cooperation. The results of testing of French and Sloven partners are compared and analysed. The steel samples have been isothermally annealed for 10.000 and 30.000 hours at 300 and 350 C. ICP-AES bulk chemical analysis of samples, microstructure investigations with light (LM) and scanning electron microscope (SEM), micro-chemical analysis with SEM/EDS, as well as SEM/EBSD phase analyses have been performed. Tensile test specimens have been made from the aged samples and standard tensile test at room temperature was performed. The SEM fractography of fractured surfaces was also performed. Microhardness measurements of ferrite and austenite phase were determined on polished metallographic samples. The results of mechanical testing and fractographic examinations are reported and discussed in this paper. Microhardness of ferrite is drastically increased with time and temperature of ageing due to spinodal decomposition. But, hardness of austenite remains practically unchanged. Tensile properties changed, similarly. Yield point and tensile strength increased but ductility significantly decreased. In accordance with ductility decrease the nature of fractured surface changed from typical ductile to brittle and dimpled to cleavage, respectively. (authors)

  19. Experimental study of swelling of irradiated solid methane during annealing

    International Nuclear Information System (INIS)

    Shabalin, E.; Fedorov, A.; Kulagin, E.; Kulikov, S.; Melikhov, V.; Shabalin, D.

    2008-01-01

    Solid methane, notwithstanding its poor radiation properties, is still widely in use at pulsed neutron sources. One of the specific problems is radiolytic hydrogen gas pressure on the walls of a methane chamber during annealing of methane. Results of experimental study of this phenomenon under fast neutron irradiation with the help of a specially made low temperature irradiation rig at the IBR-2 pulsed reactor are presented. Peak pressure on the wall of the experimental capsule during heating of a sample irradiated at 23-35 K appeared to have a maximum of 27 bar at the absorbed dose 20 MGy, and then falls down with higher doses. Pressure always reached its peak value within the temperature range 72-79 K. Generally, three phases of methane swelling during heating can be distinguished, each characterized by proper rate and intensity. Results of this study were accounted for in design of the solid methane moderator of the second target station of the ISIS facility (England)

  20. Enhanced Simulated Annealing for Solving Aggregate Production Planning

    Directory of Open Access Journals (Sweden)

    Mohd Rizam Abu Bakar

    2016-01-01

    Full Text Available Simulated annealing (SA has been an effective means that can address difficulties related to optimisation problems. SA is now a common discipline for research with several productive applications such as production planning. Due to the fact that aggregate production planning (APP is one of the most considerable problems in production planning, in this paper, we present multiobjective linear programming model for APP and optimised by SA. During the course of optimising for the APP problem, it uncovered that the capability of SA was inadequate and its performance was substandard, particularly for a sizable controlled APP problem with many decision variables and plenty of constraints. Since this algorithm works sequentially then the current state will generate only one in next state that will make the search slower and the drawback is that the search may fall in local minimum which represents the best solution in only part of the solution space. In order to enhance its performance and alleviate the deficiencies in the problem solving, a modified SA (MSA is proposed. We attempt to augment the search space by starting with N+1 solutions, instead of one solution. To analyse and investigate the operations of the MSA with the standard SA and harmony search (HS, the real performance of an industrial company and simulation are made for evaluation. The results show that, compared to SA and HS, MSA offers better quality solutions with regard to convergence and accuracy.