WorldWideScience

Sample records for annealing

  1. Quantum annealing

    OpenAIRE

    Ruiz, Alfonso de la Fuente

    2014-01-01

    Brief description on the state of the art of some local optimization methods: Quantum annealing Quantum annealing (also known as alloy, crystallization or tempering) is analogous to simulated annealing but in substitution of thermal activation by quantum tunneling. The class of algorithmic methods for quantum annealing (dubbed: 'QA'), sometimes referred by the italian school as Quantum Stochastic Optimization ('QSO'), is a promising metaheuristic tool for solving local search problems in mult...

  2. Faster annealing schedules for quantum annealing

    OpenAIRE

    Morita, Satoshi

    2007-01-01

    New annealing schedules for quantum annealing are proposed based on the adiabatic theorem. These schedules exhibit faster decrease of the excitation probability than a linear schedule. To derive this conclusion, the asymptotic form of the excitation probability for quantum annealing is explicitly obtained in the limit of long annealing time. Its first-order term, which is inversely proportional to the square of the annealing time, is shown to be determined only by the information at the initi...

  3. Quantum Annealing for Clustering

    OpenAIRE

    Kurihara, Kenichi; Tanaka, Shu; Miyashita, Seiji

    2014-01-01

    This paper studies quantum annealing (QA) for clustering, which can be seen as an extension of simulated annealing (SA). We derive a QA algorithm for clustering and propose an annealing schedule, which is crucial in practice. Experiments show the proposed QA algorithm finds better clustering assignments than SA. Furthermore, QA is as easy as SA to implement.

  4. Generalized Simulated Annealing

    OpenAIRE

    Tsallis, Constantino; Stariolo, Daniel A.

    1995-01-01

    We propose a new stochastic algorithm (generalized simulated annealing) for computationally finding the global minimum of a given (not necessarily convex) energy/cost function defined in a continuous D-dimensional space. This algorithm recovers, as particular cases, the so called classical ("Boltzmann machine") and fast ("Cauchy machine") simulated annealings, and can be quicker than both. Key-words: simulated annealing; nonconvex optimization; gradient descent; generalized statistical mechan...

  5. Multivariable Optimization: Quantum Annealing & Computation

    OpenAIRE

    Mukherjee, Sudip; Chakrabarti, Bikas K.

    2014-01-01

    Recent developments in quantum annealing techniques have been indicating potential advantage of quantum annealing for solving NP-hard optimization problems. In this article we briefly indicate and discuss the beneficial features of quantum annealing techniques and compare them with those of simulated annealing techniques. We then briefly discuss the quantum annealing studies of some model spin glass and kinetically constrained systems.

  6. General Simulated Annealing

    Institute of Scientific and Technical Information of China (English)

    姚新; 李国杰

    1991-01-01

    Simulated annealing is a new kind of random search methods developed in recent years.It can also be considered as an extension to the classical hill-climbing method in AI--probabilistic hill-cimbing.One of its most important features is its global convergence.The convergence of simulated annealing algorithm is determined by state generating probability,state accepting probability,and temperature decreasing rate,This paper gives a generalized simulated annealing algorithm with dynamic generating and accepting probabilities.The paper also shows that the generating and accepting probabilities can adopt many different kinds of distributions while the global convergence is guaranteed.

  7. Nested Quantum Annealing Correction

    OpenAIRE

    Vinci, Walter; Albash, Tameem; Lidar, Daniel A.

    2015-01-01

    We present a general error-correcting scheme for quantum annealing that allows for the encoding of a logical qubit into an arbitrarily large number of physical qubits. Given any Ising model optimization problem, the encoding replaces each logical qubit by a complete graph of degree $C$, representing the distance of the error-correcting code. A subsequent minor-embedding step then implements the encoding on the underlying hardware graph of the quantum annealer. We demonstrate experimentally th...

  8. Temperature control during annealing

    International Nuclear Information System (INIS)

    Temperature control at a weld between a tube and tube plate having heat input from an inductive heating probe to effect annealing of the weld is performed with the aid of a signal generating receptor coil coupled with the probe. The signal from the coil experiences a characteristic change when the temperature of the weld reaches the required annealing temperature and this signal is used to control the heat input to the weld. The receptor coil can be inside the tube, outside the tube, embracing a number of similar tubes, or may be inside an adjacent tube. At the required anneal temperature, the materials of the tube and weld reach their Curie point which brings about a permeability change. (author)

  9. Reactor pressure vessel thermal annealing

    International Nuclear Information System (INIS)

    The steel plates and/or forgings and welds in the beltline region of a reactor pressure vessel (RPV) are subject to embrittlement from neutron irradiation. This embrittlement causes the fracture toughness of the beltline materials to be less than the fracture toughness of the unirradiated material. Material properties of RPVs that have been irradiated and embrittled are recoverable through thermal annealing of the vessel. The amount of recovery primarily depends on the level of the irradiation embrittlement, the chemical composition of the steel, and the annealing temperature and time. Since annealing is an option for extending the service lives of RPVs or establishing less restrictive pressure-temperature (P-T) limits; the industry, the Department of Energy (DOE) and the Nuclear Regulatory Commission (NRC) have assisted in efforts to determine the viability of thermal annealing for embrittlement recovery. General guidance for in-service annealing is provided in American Society for Testing and Materials (ASTM) Standard E 509-86. In addition, the American Society of Mechanical Engineers (ASME) Code Case N-557 addresses annealing conditions (temperature and duration), temperature monitoring, evaluation of loadings, and non-destructive examination techniques. The NRC thermal annealing rule (10 CFR 50.66) was approved by the Commission and published in the Federal Register on December 19, 1995. The Regulatory Guide on thermal annealing (RG 1.162) was processed in parallel with the rule package and was published on February 15, 1996. RG 1.162 contains a listing of issues that need to be addressed for thermal annealing of an RPV. The RG also provides alternatives for predicting re-embrittlement trends after the thermal anneal has been completed. This paper gives an overview of methodology and recent technical references that are associated with thermal annealing. Results from the DOE annealing prototype demonstration project, as well as NRC activities related to the

  10. multicast utilizando Simulated Annealing

    Directory of Open Access Journals (Sweden)

    Yezid Donoso

    2005-01-01

    Full Text Available En este artículo se presenta un método de optimización multiobjetivo para la solución del problema de balanceo de carga en redes de transmisión multicast, apoyándose en la aplicación de la meta-heurística de Simulated Annealing (Recocido Simulado. El método minimiza cuatro parámetros básicos para garantizar la calidad de servicio en transmisiones multicast: retardo origen destino, máxima utilización de enlaces, ancho de banda consumido y número de saltos. Los resultados devueltos por la heurística serán comparados con los resultados arrojados por el modelo matemático propuesto en investigaciones anteriores.

  11. Quantum Annealing of Hard Problems

    OpenAIRE

    Jorg, Thomas; Krzakala, Florent; Kurchan, Jorge; Maggs, A C

    2009-01-01

    Quantum annealing is analogous to simulated annealing with a tunneling mechanism substituting for thermal activation. Its performance has been tested in numerical simulation with mixed conclusions. There is a class of optimization problems for which the efficiency can be studied analytically using techniques based on the statistical mechanics of spin glasses.

  12. Radiation annealing in cuprous oxide

    DEFF Research Database (Denmark)

    Vajda, P.

    1966-01-01

    Experimental results from high-intensity gamma-irradiation of cuprous oxide are used to investigate the annealing of defects with increasing radiation dose. The results are analysed on the basis of the Balarin and Hauser (1965) statistical model of radiation annealing, giving a square...

  13. Quantum annealing speedup over simulated annealing on random Ising chains

    CERN Document Server

    Zanca, Tommaso

    2015-01-01

    We show clear evidence of a speedup of a quantum annealing (QA) Schr\\"odinger dynamics over a Glauber master-equation simulated annealing (SA) for a random Ising model in one dimension. Annealings are tackled on equal footing, by a deterministic dynamics of the resulting Jordan-Wigner fermionic problems. We find that disorder, without frustration, makes both SA and real-time QA logarithmically slow in the annealing time $\\tau$, but QA shows a quadratic speedup with respect to SA. We also find that an imaginary-time Schr\\"odinger QA dynamics provides a further exponential speedup, with an asymptotic residual error compatible with a power-law $\\tau^{-\\mu}$.

  14. Reactor vessel annealing system

    Science.gov (United States)

    Miller, Phillip E.; Katz, Leonoard R.; Nath, Raymond J.; Blaushild, Ronald M.; Tatch, Michael D.; Kordalski, Frank J.; Wykstra, Donald T.; Kavalkovich, William M.

    1991-01-01

    A system for annealing a vessel (14) in situ by heating the vessel (14) to a defined temperature, composed of: an electrically operated heater assembly (10) insertable into the vessel (14) for heating the vessel (14) to the defined temperature; temperature monitoring components positioned relative to the heater assembly (10) for monitoring the temperature of the vessel (14); a controllable electric power supply unit (32-60) for supplying electric power required by the heater assembly (10); a control unit (80-86) for controlling the power supplied by the power supply unit (32-60); a first vehicle (2) containing the power supply unit (32-60); a second vehicle (4) containing the control unit (80-86); power conductors (18,22) connectable between the power supply unit (32-60) and the heater unit (10) for delivering the power supplied by the power supply unit (32-60) to the heater assembly (10); signal conductors (20,24) connectable between the temperature monitoring components and the control unit (80-86) for delivering temperature indicating signals from the temperature monitoring components to the control unit (80-86); and control conductors (8) connectable between the control unit (80-86) and the power supply unit (32-60) for delivering to the power supply unit (32-60) control signals for controlling the level of power supplied by the power supply unit (32-60) to the heater assembly (10).

  15. Stochastic Annealing for Variational Inference

    OpenAIRE

    Gultekin, San; Zhang, Aonan; Paisley, John

    2015-01-01

    We empirically evaluate a stochastic annealing strategy for Bayesian posterior optimization with variational inference. Variational inference is a deterministic approach to approximate posterior inference in Bayesian models in which a typically non-convex objective function is locally optimized over the parameters of the approximating distribution. We investigate an annealing method for optimizing this objective with the aim of finding a better local optimal solution and compare with determin...

  16. Quantum annealing speedup over simulated annealing on random Ising chains

    Science.gov (United States)

    Zanca, Tommaso; Santoro, Giuseppe E.

    2016-06-01

    We show clear evidence of a quadratic speedup of a quantum annealing (QA) Schrödinger dynamics over a Glauber master equation simulated annealing (SA) for a random Ising model in one dimension, via an equal-footing exact deterministic dynamics of the Jordan-Wigner fermionized problems. This is remarkable, in view of the arguments of H. G. Katzgraber et al. [Phys. Rev. X 4, 021008 (2014), 10.1103/PhysRevX.4.021008], since SA does not encounter any phase transition, while QA does. We also find a second remarkable result: that a "quantum-inspired" imaginary-time Schrödinger QA provides a further exponential speedup, i.e., an asymptotic residual error decreasing as a power law τ-μ of the annealing time τ .

  17. Thermal Annealing of Exfoliated Graphene

    Directory of Open Access Journals (Sweden)

    Wang Xueshen

    2013-01-01

    Full Text Available Monolayer graphene is obtained by mechanical exfoliation using scotch tapes. The effects of thermal annealing on the tape residues and edges of graphene are researched. Atomic force microscope images showed that almost all the residues could be removed in N2/H2 at 400°C but only agglomerated in vacuum. Raman spectra of the annealed graphene show both the 2D peak and G peak blueshift. The full width at half maximum (FWHM of the 2D peak becomes larger and the intensity ratio of the 2D peak to G peak decreases. The edges of graphene are completely attached to the surface of the substrate after annealing.

  18. Point defect annealing near voids

    International Nuclear Information System (INIS)

    Kinetic calculations were carried out for the annealing of vacancies and interstitials at voids under irradiation conditions. The case in which there is a small energy barrier between a defect and a void (such as might arise from strain effects or solute segregation at void surfaces) has been investigated in detail. With irradiation conditions which yield void swelling, it is found that a small barrier produces a significant bias parameter for preferential annealing. The bias parameter is relatively insensitive to temperature and irradiation rate, but varies with void radius, decreasing as the void size increases

  19. An Introduction to Simulated Annealing

    Science.gov (United States)

    Albright, Brian

    2007-01-01

    An attempt to model the physical process of annealing lead to the development of a type of combinatorial optimization algorithm that takes on the problem of getting trapped in a local minimum. The author presents a Microsoft Excel spreadsheet that illustrates how this works.

  20. Annealing properties of rice starch.

    Science.gov (United States)

    Thermal properties of starch can be modified by annealing, i.e., a pre-treatment in excessive amounts of water at temperatures below the gelatinization temperatures. This treatment is known to improve the crystalline properties, and is a useful tool to gain a better control of the functional proper...

  1. Ensemble annealing of complex physical systems

    CERN Document Server

    Habeck, Michael

    2015-01-01

    Algorithms for simulating complex physical systems or solving difficult optimization problems often resort to an annealing process. Rather than simulating the system at the temperature of interest, an annealing algorithm starts at a temperature that is high enough to ensure ergodicity and gradually decreases it until the destination temperature is reached. This idea is used in popular algorithms such as parallel tempering and simulated annealing. A general problem with annealing methods is that they require a temperature schedule. Choosing well-balanced temperature schedules can be tedious and time-consuming. Imbalanced schedules can have a negative impact on the convergence, runtime and success of annealing algorithms. This article outlines a unifying framework, ensemble annealing, that combines ideas from simulated annealing, histogram reweighting and nested sampling with concepts in thermodynamic control. Ensemble annealing simultaneously simulates a physical system and estimates its density of states. The...

  2. Residual Energies after Slow Quantum Annealing

    OpenAIRE

    Suzuki, Sei; Okada, Masato

    2005-01-01

    Features of the residual energy after the quantum annealing are investigated. The quantum annealing method exploits quantum fluctuations to search the ground state of classical disordered Hamiltonian. If the quantum fluctuation is reduced sufficiently slowly and linearly by the time, the residual energy after the quantum annealing falls as the inverse square of the annealing time. We show this feature of the residual energy by numerical calculations for small-sized systems and derive it on th...

  3. Hybrid Quantum Annealing for Clustering Problems

    OpenAIRE

    Tanaka, Shu; Tamura, Ryo; Sato, Issei; Kurihara, Kenichi

    2011-01-01

    We develop a hybrid type of quantum annealing in which we control temperature and quantum field simultaneously. We study the efficiency of proposed quantum annealing and find a good schedule of changing thermal fluctuation and quantum fluctuation. In this paper, we focus on clustering problems which are important topics in information science and engineering. We obtain the better solution of the clustering problem than the standard simulated annealing by proposed quantum annealing.

  4. Quantum annealing: An introduction and new developments

    OpenAIRE

    Ohzeki, Masayuki; Nishimori, Hidetoshi

    2010-01-01

    Quantum annealing is a generic algorithm using quantum-mechanical fluctuations to search for the solution of an optimization problem. The present paper first reviews the fundamentals of quantum annealing and then reports on preliminary results for an alternative method. The review part includes the relationship of quantum annealing with classical simulated annealing. We next propose a novel quantum algorithm which might be available for hard optimization problems by using a classical-quantum ...

  5. Ensemble annealing of complex physical systems

    OpenAIRE

    Habeck, Michael

    2015-01-01

    Algorithms for simulating complex physical systems or solving difficult optimization problems often resort to an annealing process. Rather than simulating the system at the temperature of interest, an annealing algorithm starts at a temperature that is high enough to ensure ergodicity and gradually decreases it until the destination temperature is reached. This idea is used in popular algorithms such as parallel tempering and simulated annealing. A general problem with annealing methods is th...

  6. Quantum Annealing for Variational Bayes Inference

    OpenAIRE

    Sato, Issei; Kurihara, Kenichi; Tanaka, Shu; Nakagawa, Hiroshi; Miyashita, Seiji

    2014-01-01

    This paper presents studies on a deterministic annealing algorithm based on quantum annealing for variational Bayes (QAVB) inference, which can be seen as an extension of the simulated annealing for variational Bayes (SAVB) inference. QAVB is as easy as SAVB to implement. Experiments revealed QAVB finds a better local optimum than SAVB in terms of the variational free energy in latent Dirichlet allocation (LDA).

  7. Non-Hermitian Quantum Annealing and Superradiance

    CERN Document Server

    Nesterov, Alexander I; de la Cruz, Fermín Aceves; Zepeda, Juan Carlos Beas

    2015-01-01

    We consider the non-Hermitian quantum annealing for the one-dimentional Ising spin chain, and for a large number of qubits. We show that the annealing time is significanly reduced for the non-Hermitian algorithm in comparison with the Hermitian one. We also demonstrtate the relation of the non-Hermitian quantum annealing with the superadiance transition in this system.

  8. Feasibility of Simulated Annealing Tomography

    CERN Document Server

    Vo, Nghia T; Moser, Herbert O

    2014-01-01

    Simulated annealing tomography (SAT) is a simple iterative image reconstruction technique which can yield a superior reconstruction compared with filtered back-projection (FBP). However, the very high computational cost of iteratively calculating discrete Radon transform (DRT) has limited the feasibility of this technique. In this paper, we propose an approach based on the pre-calculated intersection lengths array (PILA) which helps to remove the step of computing DRT in the simulated annealing procedure and speed up SAT by over 300 times. The enhancement of convergence speed of the reconstruction process using the best of multiple-estimate (BoME) strategy is introduced. The performance of SAT under different conditions and in comparison with other methods is demonstrated by numerical experiments.

  9. Very Fast Simulated Re-Annealing

    OpenAIRE

    Ingber, Lester

    1989-01-01

    Draft An algorithm is developed to statistically find the best global fit of a nonlinear non-convex cost-function over a D-dimensional space. It is argued that this algorithm permits an annealing schedule for ‘‘temperature’’ T decreasing exponentially in annealing-time k, T = T0 exp(−ck1/D). The introduction of re-annealing also permits adaptation to changing sensitivities in the multidimensional parameter-space. This annealing schedule is faster than fast Cauchy annealing, ...

  10. Computational algorithm for molybdenite concentrate annealing

    International Nuclear Information System (INIS)

    Computational algorithm is presented for annealing of molybdenite concentrate with granulated return dust and that of granulated molybdenite concentrate. The algorithm differs from the known analogies for sulphide raw material annealing by including the calculation of return dust mass in stationary annealing; the latter quantity varies form the return dust mass value obtained in the first iteration step. Masses of solid products are determined by distribution of concentrate annealing products, including return dust and benthonite. The algorithm is applied to computations for annealing of other sulphide materials. 3 refs

  11. Recursive simulation of quantum annealing

    CERN Document Server

    Sowa, A P; Samson, J H; Savel'ev, S E; Zagoskin, A M; Heidel, S; Zúñiga-Anaya, J C

    2015-01-01

    The evaluation of the performance of adiabatic annealers is hindered by lack of efficient algorithms for simulating their behaviour. We exploit the analyticity of the standard model for the adiabatic quantum process to develop an efficient recursive method for its numerical simulation in case of both unitary and non-unitary evolution. Numerical simulations show distinctly different distributions for the most important figure of merit of adiabatic quantum computing --- the success probability --- in these two cases.

  12. Quantum Annealing for Constrained Optimization

    Science.gov (United States)

    Hen, Itay; Spedalieri, Federico M.

    2016-03-01

    Recent advances in quantum technology have led to the development and manufacturing of experimental programmable quantum annealers that promise to solve certain combinatorial optimization problems of practical relevance faster than their classical analogues. The applicability of such devices for many theoretical and real-world optimization problems, which are often constrained, is severely limited by the sparse, rigid layout of the devices' quantum bits. Traditionally, constraints are addressed by the addition of penalty terms to the Hamiltonian of the problem, which, in turn, requires prohibitively increasing physical resources while also restricting the dynamical range of the interactions. Here, we propose a method for encoding constrained optimization problems on quantum annealers that eliminates the need for penalty terms and thereby reduces the number of required couplers and removes the need for minor embedding, greatly reducing the number of required physical qubits. We argue the advantages of the proposed technique and illustrate its effectiveness. We conclude by discussing the experimental feasibility of the suggested method as well as its potential to appreciably reduce the resource requirements for implementing optimization problems on quantum annealers and its significance in the field of quantum computing.

  13. Annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    The newer uses of ion implantation require a higher dose rate. This has led to the introduction of high beam current implanters; the wafers move in front of a stationary beam to give a scanning effect. This can lead to non-uniform heating of the wafer. Variations in the sheet resistance of the layers can be very non-uniform following thermal annealing. Non-uniformity in the effective doping both over a single wafer and from one wafer to another, can affect the usefulness of ion implantation in high dose rate applications. Experiments to determine the extent of non-uniformity in sheet resistance, and to see if it is correlated to the annealing scheme have been carried out. Details of the implantation parameters are given. It was found that best results were obtained when layers were annealed at the maximum possible temperature. For arsenic, phosphorus and antimony layers, improvements were observed up to 12000C and boron up to 9500C. Usually, it is best to heat the layer directly to the maximum temperature to produce the most uniform layer; with phosphorus layers however it is better to pre-heat to 10500C. (U.K.)

  14. Annealing study of poly(etheretherketone)

    Science.gov (United States)

    Cebe, Peggy

    1988-01-01

    Annealing of PEEK has been studied for two materials cold-crystallized from the rubbery amorphous state. The first material is a low molecular weight PEEK; the second is commercially available neat resin. Differential scanning calorimetry was used to monitor the melting behavior of annealed samples. The effect of thermal history on melting behavior is very complex and depends upon annealing temperature, residence time at the annealing temperature, and subsequent scanning rate. Thermal stability of both materials is improved by annealing, and for an annealing temperature near the melting point, the polymer can be stabilized against reorganization during the scan. Variations of density, degree of crystallinity, and X-ray long period were studied as a function of annealing temperature for the commercial material.

  15. Recursive Branching Simulated Annealing Algorithm

    Science.gov (United States)

    Bolcar, Matthew; Smith, J. Scott; Aronstein, David

    2012-01-01

    This innovation is a variation of a simulated-annealing optimization algorithm that uses a recursive-branching structure to parallelize the search of a parameter space for the globally optimal solution to an objective. The algorithm has been demonstrated to be more effective at searching a parameter space than traditional simulated-annealing methods for a particular problem of interest, and it can readily be applied to a wide variety of optimization problems, including those with a parameter space having both discrete-value parameters (combinatorial) and continuous-variable parameters. It can take the place of a conventional simulated- annealing, Monte-Carlo, or random- walk algorithm. In a conventional simulated-annealing (SA) algorithm, a starting configuration is randomly selected within the parameter space. The algorithm randomly selects another configuration from the parameter space and evaluates the objective function for that configuration. If the objective function value is better than the previous value, the new configuration is adopted as the new point of interest in the parameter space. If the objective function value is worse than the previous value, the new configuration may be adopted, with a probability determined by a temperature parameter, used in analogy to annealing in metals. As the optimization continues, the region of the parameter space from which new configurations can be selected shrinks, and in conjunction with lowering the annealing temperature (and thus lowering the probability for adopting configurations in parameter space with worse objective functions), the algorithm can converge on the globally optimal configuration. The Recursive Branching Simulated Annealing (RBSA) algorithm shares some features with the SA algorithm, notably including the basic principles that a starting configuration is randomly selected from within the parameter space, the algorithm tests other configurations with the goal of finding the globally optimal

  16. Strong white photoluminescence from annealed zeolites

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Zhenhua, E-mail: baizh46@gmail.com [School of Chemical and Biomedical Engineering, Nanyang Technological University, Singapore 637457 (Singapore); Fujii, Minoru; Imakita, Kenji; Hayashi, Shinji [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)

    2014-01-15

    The optical properties of zeolites annealed at various temperatures are investigated for the first time. The annealed zeolites exhibit strong white photoluminescence (PL) under ultraviolet light excitation. With increasing annealing temperature, the emission intensity of annealed zeolites first increases and then decreases. At the same time, the PL peak red-shifts from 495 nm to 530 nm, and then returns to 500 nm. The strongest emission appears when the annealing temperature is 500 °C. The quantum yield of the sample is measured to be ∼10%. The PL lifetime monotonously increases from 223 μs to 251 μs with increasing annealing temperature. The origin of white PL is ascribed to oxygen vacancies formed during the annealing process. -- Highlights: • The optical properties of zeolites annealed at various temperatures are investigated. • The annealed zeolites exhibit strong white photoluminescence. • The maximum PL enhancement reaches as large as 62 times. • The lifetime shows little dependence on annealing temperature. • The origin of white emission is ascribed to the oxygen vacancies.

  17. Loviisa Unit One: Annealing - healing

    Energy Technology Data Exchange (ETDEWEB)

    Kohopaeae, J.; Virsu, R. [ed.; Henriksson, A. [ed.

    1997-11-01

    Unit 1 of the Loviisa nuclear powerplant was annealed in connection with the refuelling outage in the summer of 1996. This type of heat treatment restored the toughness properties of the pressure vessel weld, which had been embrittled be neutron radiation, so that it is almost equivalent to a new weld. The treatment itself was an ordinary metallurgical procedure that took only a few days. But the material studies that preceded it began over fifteen years ago and have put IVO at the forefront of world-wide expertise in the area of radiation embrittlement

  18. Reverse annealing of boron doped polycrystalline silicon

    International Nuclear Information System (INIS)

    Thermal activation was carried out using polycrystalline silicon (poly-Si) produced through sequential-lateral-solidification or excimer-laser-crystallization (ELC) after B+ ion shower doping. The activation efficiency of the ELC samples was found to be higher than that of the SLS ones. In this regard, grain boundaries seemed to play a critical role in terms of the activation of dopants in poly-Si at low temperatures. Reverse annealing, in which a continuous loss of charge carriers occurs, was found in this study at temperatures ranging between 400 oC and 650 oC. The samples treated by rapid thermal annealing showed a lower sheet resistance than those treated by furnace annealing. Rapid thermal annealing was found to exhibit a higher activation efficiency than furnace annealing. Reverse annealing is believed to play an important role in terms of activation efficiency

  19. Reverse annealing of boron doped polycrystalline silicon

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Beop-Jong; Hong, Won-Eui [Department of Materials Science and Engineering, Hongik University, Seoul, 121-791 (Korea, Republic of); Kim, Deok Hoi; Uemoto, Tstomu; Kim, Chi Woo [LTPS Team, AMLCD Business, Samsung Electronics, Yongin-City, Gyeonggi-Do, 449-711 (Korea, Republic of); Ro, Jae-Sang [Department of Materials Science and Engineering, Hongik University, Seoul, 121-791 (Korea, Republic of)], E-mail: jsang@wow.hongik.ac.kr

    2008-07-31

    Thermal activation was carried out using polycrystalline silicon (poly-Si) produced through sequential-lateral-solidification or excimer-laser-crystallization (ELC) after B{sup +} ion shower doping. The activation efficiency of the ELC samples was found to be higher than that of the SLS ones. In this regard, grain boundaries seemed to play a critical role in terms of the activation of dopants in poly-Si at low temperatures. Reverse annealing, in which a continuous loss of charge carriers occurs, was found in this study at temperatures ranging between 400 {sup o}C and 650 {sup o}C. The samples treated by rapid thermal annealing showed a lower sheet resistance than those treated by furnace annealing. Rapid thermal annealing was found to exhibit a higher activation efficiency than furnace annealing. Reverse annealing is believed to play an important role in terms of activation efficiency.

  20. Keystream Generator Based On Simulated Annealing

    Directory of Open Access Journals (Sweden)

    Ayad A. Abdulsalam

    2011-01-01

    Full Text Available Advances in the design of keystream generator using heuristic techniques are reported. A simulated annealing algorithm for generating random keystream with large complexity is presented. Simulated annealing technique is adapted to locate these requirements. The definitions for some cryptographic properties are generalized, providing a measure suitable for use as an objective function in a simulated annealing algorithm, seeking randomness that satisfy both correlation immunity and the large linear complexity. Results are presented demonstrating the effectiveness of the method.

  1. Simulated Annealing using Hybrid Monte Carlo

    OpenAIRE

    Salazar, Rafael; Toral, Raúl

    1997-01-01

    We propose a variant of the simulated annealing method for optimization in the multivariate analysis of differentiable functions. The method uses global actualizations via the hybrid Monte Carlo algorithm in their generalized version for the proposal of new configurations. We show how this choice can improve upon the performance of simulated annealing methods (mainly when the number of variables is large) by allowing a more effective searching scheme and a faster annealing schedule.

  2. NEW SIMULATED ANNEALING ALGORITHMS FOR CONSTRAINED OPTIMIZATION

    OpenAIRE

    LINET ÖZDAMAR; CHANDRA SEKHAR PEDAMALLU

    2010-01-01

    We propose a Population based dual-sequence Non-Penalty Annealing algorithm (PNPA) for solving the general nonlinear constrained optimization problem. The PNPA maintains a population of solutions that are intermixed by crossover to supply a new starting solution for simulated annealing throughout the search. Every time the search gets stuck at a local optimum, this crossover procedure is triggered and simulated annealing search re-starts from a new subspace. In both the crossover and simulate...

  3. Rapid Annealing Of Amorphous Hydrogenated Carbon

    Science.gov (United States)

    Alterovitz, Samuel A.; Pouch, John J.; Warner, Joseph D.

    1989-01-01

    Report describes experiments to determine effects of rapid annealing on films of amorphous hydrogenated carbon. Study represents first efforts to provide information for applications of a-C:H films where rapid thermal processing required. Major finding, annealing causes abrupt increase in absorption and concomitant decrease in optical band gap. Most of change occurs during first 20 s, continues during longer annealing times. Extend of change increases with annealing temperature. Researchers hypothesize abrupt initial change caused by loss of hydrogen, while gradual subsequent change due to polymerization of remaining carbon into crystallites or sheets of graphite. Optical band gaps of unannealed specimens on silicon substrates lower than those of specimens on quartz substrates.

  4. Classical Simulated Annealing Using Quantum Analogues

    Science.gov (United States)

    La Cour, Brian R.; Troupe, James E.; Mark, Hans M.

    2016-06-01

    In this paper we consider the use of certain classical analogues to quantum tunneling behavior to improve the performance of simulated annealing on a discrete spin system of the general Ising form. Specifically, we consider the use of multiple simultaneous spin flips at each annealing step as an analogue to quantum spin coherence as well as modifications of the Boltzmann acceptance probability to mimic quantum tunneling. We find that the use of multiple spin flips can indeed be advantageous under certain annealing schedules, but only for long anneal times.

  5. Classical Simulated Annealing Using Quantum Analogues

    Science.gov (United States)

    La Cour, Brian R.; Troupe, James E.; Mark, Hans M.

    2016-08-01

    In this paper we consider the use of certain classical analogues to quantum tunneling behavior to improve the performance of simulated annealing on a discrete spin system of the general Ising form. Specifically, we consider the use of multiple simultaneous spin flips at each annealing step as an analogue to quantum spin coherence as well as modifications of the Boltzmann acceptance probability to mimic quantum tunneling. We find that the use of multiple spin flips can indeed be advantageous under certain annealing schedules, but only for long anneal times.

  6. DOE`s annealing prototype demonstration projects

    Energy Technology Data Exchange (ETDEWEB)

    Warren, J.; Nakos, J.; Rochau, G.

    1997-02-01

    One of the challenges U.S. utilities face in addressing technical issues associated with the aging of nuclear power plants is the long-term effect of plant operation on reactor pressure vessels (RPVs). As a nuclear plant operates, its RPV is exposed to neutrons. For certain plants, this neutron exposure can cause embrittlement of some of the RPV welds which can shorten the useful life of the RPV. This RPV embrittlement issue has the potential to affect the continued operation of a number of operating U.S. pressurized water reactor (PWR) plants. However, RPV material properties affected by long-term irradiation are recoverable through a thermal annealing treatment of the RPV. Although a dozen Russian-designed RPVs and several U.S. military vessels have been successfully annealed, U.S. utilities have stated that a successful annealing demonstration of a U.S. RPV is a prerequisite for annealing a licensed U.S. nuclear power plant. In May 1995, the Department of Energy`s Sandia National Laboratories awarded two cost-shared contracts to evaluate the feasibility of annealing U.S. licensed plants by conducting an anneal of an installed RPV using two different heating technologies. The contracts were awarded to the American Society of Mechanical Engineers (ASME) Center for Research and Technology Development (CRTD) and MPR Associates (MPR). The ASME team completed its annealing prototype demonstration in July 1996, using an indirect gas furnace at the uncompleted Public Service of Indiana`s Marble Hill nuclear power plant. The MPR team`s annealing prototype demonstration was scheduled to be completed in early 1997, using a direct heat electrical furnace at the uncompleted Consumers Power Company`s nuclear power plant at Midland, Michigan. This paper describes the Department`s annealing prototype demonstration goals and objectives; the tasks, deliverables, and results to date for each annealing prototype demonstration; and the remaining annealing technology challenges.

  7. Annealing Reduces Free Volumes In Thermoplastics

    Science.gov (United States)

    Singh, Jag J.; St. Clair, Terry L.

    1988-01-01

    Investigation conducted to determine free volumes and water-absorption characteristics of two types of thermoplastic polymide as functions of annealing histories. Reductions reach asymptotic values after several annealing cycles. High-temperature thermoplastics excellent candidates for use in aerospace applications. Graphite-fiber composites containing thermoplastic matrices have wide applicability.

  8. Theory of Quantum Annealing of an Ising Spin Glass

    OpenAIRE

    Santoro, Giuseppe E.; Martonak, Roman; Tosatti, Erio; Car, Roberto

    2002-01-01

    Probing the lowest energy configuration of a complex system by quantum annealing was recently found to be more effective than its classical, thermal counterpart. Comparing classical and quantum Monte Carlo annealing protocols on the random two-dimensional Ising model we confirm the superiority of quantum annealing relative to classical annealing. We also propose a theory of quantum annealing, based on a cascade of Landau-Zener tunneling events. For both classical and quantum annealing, the re...

  9. Cylinder packing by simulated annealing

    Directory of Open Access Journals (Sweden)

    M. Helena Correia

    2000-12-01

    Full Text Available This paper is motivated by the problem of loading identical items of circular base (tubes, rolls, ... into a rectangular base (the pallet. For practical reasons, all the loaded items are considered to have the same height. The resolution of this problem consists in determining the positioning pattern of the circular bases of the items on the rectangular pallet, while maximizing the number of items. This pattern will be repeated for each layer stacked on the pallet. Two algorithms based on the meta-heuristic Simulated Annealing have been developed and implemented. The tuning of these algorithms parameters implied running intensive tests in order to improve its efficiency. The algorithms developed were easily extended to the case of non-identical circles.Este artigo aborda o problema de posicionamento de objetos de base circular (tubos, rolos, ... sobre uma base retangular de maiores dimensões. Por razões práticas, considera-se que todos os objetos a carregar apresentam a mesma altura. A resolução do problema consiste na determinação do padrão de posicionamento das bases circulares dos referidos objetos sobre a base de forma retangular, tendo como objetivo a maximização do número de objetos estritamente posicionados no interior dessa base. Este padrão de posicionamento será repetido em cada uma das camadas a carregar sobre a base retangular. Apresentam-se dois algoritmos para a resolução do problema. Estes algoritmos baseiam-se numa meta-heurística, Simulated Annealling, cuja afinação de parâmetros requereu a execução de testes intensivos com o objetivo de atingir um elevado grau de eficiência no seu desempenho. As características dos algoritmos implementados permitiram que a sua extensão à consideração de círculos com raios diferentes fosse facilmente conseguida.

  10. Precision Laser Annealing of Focal Plane Arrays

    Energy Technology Data Exchange (ETDEWEB)

    Bender, Daniel A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); DeRose, Christopher [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Starbuck, Andrew Lea [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Verley, Jason C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Jenkins, Mark W. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-09-01

    We present results from laser annealing experiments in Si using a passively Q-switched Nd:YAG microlaser. Exposure with laser at fluence values above the damage threshold of commercially available photodiodes results in electrical damage (as measured by an increase in photodiode dark current). We show that increasing the laser fluence to values in excess of the damage threshold can result in annealing of a damage site and a reduction in detector dark current by as much as 100x in some cases. A still further increase in fluence results in irreparable damage. Thus we demonstrate the presence of a laser annealing window over which performance of damaged detectors can be at least partially reconstituted. Moreover dark current reduction is observed over the entire operating range of the diode indicating that device performance has been improved for all values of reverse bias voltage. Additionally, we will present results of laser annealing in Si waveguides. By exposing a small (<10 um) length of a Si waveguide to an annealing laser pulse, the longitudinal phase of light acquired in propagating through the waveguide can be modified with high precision, <15 milliradian per laser pulse. Phase tuning by 180 degrees is exhibited with multiple exposures to one arm of a Mach-Zehnder interferometer at fluence values below the morphological damage threshold of an etched Si waveguide. No reduction in optical transmission at 1550 nm was found after 220 annealing laser shots. Modeling results for laser annealing in Si are also presented.

  11. Enthalpy relaxation and annealing effect in polystyrene.

    Science.gov (United States)

    Sakatsuji, Waki; Konishi, Takashi; Miyamoto, Yoshihisa

    2013-07-01

    The effects of thermal history on the enthalpy relaxation in polystyrene are studied by differential scanning calorimetry. The temperature dependence of the specific heat in the liquid and the glassy states, that of relaxation time, and the exponent of the Kohlrausch-Williams-Watts function are determined by measurements of the thermal response against sinusoidal temperature variation. A phenomenological model equation previously proposed to interpret the memory effect in the frozen state is applied to the enthalpy relaxation and the evolution of entropy under a given thermal history is calculated. The annealing below the glass transition temperature produces two effects on enthalpy relaxation: the decay of excess entropy with annealing time in the early stage of annealing and the increase in relaxation time due to physical aging in the later stage. The crossover of these effects is reflected in the variation of temperature of the maximum specific heat observed in the heating process after annealing and cooling.

  12. Simulated Quantum Annealing Can Be Exponentially Faster than Classical Simulated Annealing

    OpenAIRE

    Crosson, Elizabeth; Harrow, Aram W.

    2016-01-01

    Simulated Quantum Annealing (SQA) is a Markov Chain Monte-Carlo algorithm that samples the equilibrium thermal state of a Quantum Annealing (QA) Hamiltonian. In addition to simulating quantum systems, SQA has also been proposed as another physics-inspired classical algorithm for combinatorial optimization, alongside classical simulated annealing. However, in many cases it remains an open challenge to determine the performance of both QA and SQA. One piece of evidence for the strength of Q...

  13. Quantum Annealing of a Disordered Magnet

    OpenAIRE

    Brooke, J.; Bitko, D.; Rosenbaum, T. F.; Aeppli, G.

    2001-01-01

    Traditional simulated annealing utilizes thermal fluctuations for convergence in optimization problems. Quantum tunneling provides a different mechanism for moving between states, with the potential for reduced time scales. We compare thermal and quantum annealing in a model disordered Ising magnet, Li\\sub{Ho}{0.44}\\sub{Y}{0.56}\\sub{F}{4}, where the effects of quantum mechanics can be tuned in the laboratory by varying a magnetic field applied transverse to the Ising axis. Our results indicat...

  14. Adaptive simulated annealing (ASA): Lessons learned

    OpenAIRE

    Ingber, L.

    2000-01-01

    Adaptive simulated annealing (ASA) is a global optimization algorithm based on an associated proof that the parameter space can be sampled much more efficiently than by using other previous simulated annealing algorithms. The author's ASA code has been publicly available for over two years. During this time the author has volunteered to help people via e-mail, and the feedback obtained has been used to further develop the code. Some lessons learned, in particular some which are relevant to ot...

  15. Irradiation embrittlement and optimisation of annealing

    International Nuclear Information System (INIS)

    This conference is composed of 30 papers grouped in 6 sessions related to the following themes: neutron irradiation effects in pressure vessel steels and weldments used in PWR, WWER and BWR nuclear plants; results from surveillance programmes (irradiation induced damage and annealing processes); studies on the influence of variations in irradiation conditions and mechanisms, and modelling; mitigation of irradiation effects, especially through thermal annealing; mechanical test procedures and specimen size effects

  16. Influence of alloying and secondary annealing on anneal hardening effect at sintered copper alloys

    Indian Academy of Sciences (India)

    Svetlana Nestorovic

    2005-08-01

    This paper reports results of investigation carried out on sintered copper alloys (Cu, 8 at%; Zn, Ni, Al and Cu–Au with 4 at%Au). The alloys were subjected to cold rolling (30, 50 and 70%) and annealed isochronally up to recrystallization temperature. Changes in hardness and electrical conductivity were followed in order to investigate the anneal hardening effect. This effect was observed after secondary annealing also. Au and Al have been found to be more effective in inducing anneal hardening effect.

  17. Nanocrystalline magnetic materials obtained by flash annealing

    Directory of Open Access Journals (Sweden)

    R.K. Murakami

    1999-04-01

    Full Text Available The aim of the present work was to produce enhanced-remanence nanocrystalline magnetic material by crystallizing amorphous or partially amorphous Pr4.5Fe77B18.5 alloys by the flash annealing process, also known as the dc-Joule heating process, and to determine the optimal conditions for obtaining good magnetic coupling between the magnetic phases present in this material. Ribbons of Pr4.5Fe77B18.5 were produced by melt spinning and then annealed for 10-30 s at temperatures 500 - 640 °C by passing current through the sample to develop the enhanced-remanence nanocrystalline magnetic material. These materials were studied by X-ray diffraction, differential thermal analysis and magnetic measurements. Coercivity increases of up to 15% were systematically observed in relation to furnace-annealed material. Two different samples were carefully examined: (i a sample annealed at 600 °C which showed the highest coercive field Hc and remanence ratio Mr/Ms and (ii a sample annealed at 520 °C which showed phase separation in the second quadrant demagnetization curve. Our results are in agreement with other studies which show that flash annealing improves the magnetic properties of some amorphous ferromagnetic ribbons.

  18. Quantum Annealing and Quantum Fluctuation Effect in Frustrated Ising Systems

    OpenAIRE

    Tanaka, Shu; Tamura, Ryo

    2012-01-01

    Quantum annealing method has been widely attracted attention in statistical physics and information science since it is expected to be a powerful method to obtain the best solution of optimization problem as well as simulated annealing. The quantum annealing method was incubated in quantum statistical physics. This is an alternative method of the simulated annealing which is well-adopted for many optimization problems. In the simulated annealing, we obtain a solution of optimization problem b...

  19. Origin of reverse annealing effect in hydrogen-implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Di, Zengfeng [Los Alamos National Laboratory; Nastasi, Michael A [Los Alamos National Laboratory; Wang, Yongqiang [Los Alamos National Laboratory

    2009-01-01

    In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. On the basis of quantitative high resolution transmission electron microscopy combined with channeling Rutherford backscattering analysis, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induce platelets. Platelets are responsible for an increase in the height and width the channeling damage peak following increased isochronal anneals.

  20. Hydrogen Annealing Of Single-Crystal Superalloys

    Science.gov (United States)

    Smialek, James L.; Schaeffer, John C.; Murphy, Wendy

    1995-01-01

    Annealing at temperature equal to or greater than 2,200 degrees F in atmosphere of hydrogen found to increase ability of single-crystal superalloys to resist oxidation when subsequently exposed to oxidizing atmospheres at temperatures almost as high. Supperalloys in question are principal constituents of hot-stage airfoils (blades) in aircraft and ground-based turbine engines; also used in other high-temperature applications like chemical-processing plants, coal-gasification plants, petrochemical refineries, and boilers. Hydrogen anneal provides resistance to oxidation without decreasing fatigue strength and without need for coating or reactive sulfur-gettering constituents. In comparison with coating, hydrogen annealing costs less. Benefits extend to stainless steels, nickel/chromium, and nickel-base alloys, subject to same scale-adhesion and oxidation-resistance considerations, except that scale is chromia instead of alumina.

  1. Stochastic annealing simulation of cascades in metals

    Energy Technology Data Exchange (ETDEWEB)

    Heinisch, H.L.

    1996-04-01

    The stochastic annealing simulation code ALSOME is used to investigate quantitatively the differential production of mobile vacancy and SIA defects as a function of temperature for isolated 25 KeV cascades in copper generated by MD simulations. The ALSOME code and cascade annealing simulations are described. The annealing simulations indicate that the above Stage V, where the cascade vacancy clusters are unstable,m nearly 80% of the post-quench vacancies escape the cascade volume, while about half of the post-quench SIAs remain in clusters. The results are sensitive to the relative fractions of SIAs that occur in small, highly mobile clusters and large stable clusters, respectively, which may be dependent on the cascade energy.

  2. Simulation of Storm Occurrences Using Simulated Annealing.

    Science.gov (United States)

    Lokupitiya, Ravindra S.; Borgman, Leon E.; Anderson-Sprecher, Richard

    2005-11-01

    Modeling storm occurrences has become a vital part of hurricane prediction. In this paper, a method for simulating event occurrences using a simulated annealing algorithm is described. The method is illustrated using annual counts of hurricanes and of tropical storms in the Atlantic Ocean and Gulf of Mexico. Simulations closely match distributional properties, including possible correlations, in the historical data. For hurricanes, traditionally used Poisson and negative binomial processes also predict univariate properties well, but for tropical storms parametric methods are less successful. The authors determined that simulated annealing replicates properties of both series. Simulated annealing can be designed so that simulations mimic historical distributional properties to whatever degree is desired, including occurrence of extreme events and temporal patterning.

  3. Quantum annealing correction with minor embedding

    Science.gov (United States)

    Vinci, Walter; Albash, Tameem; Paz-Silva, Gerardo; Hen, Itay; Lidar, Daniel A.

    2015-10-01

    Quantum annealing provides a promising route for the development of quantum optimization devices, but the usefulness of such devices will be limited in part by the range of implementable problems as dictated by hardware constraints. To overcome constraints imposed by restricted connectivity between qubits, a larger set of interactions can be approximated using minor embedding techniques whereby several physical qubits are used to represent a single logical qubit. However, minor embedding introduces new types of errors due to its approximate nature. We introduce and study quantum annealing correction schemes designed to improve the performance of quantum annealers in conjunction with minor embedding, thus leading to a hybrid scheme defined over an encoded graph. We argue that this scheme can be efficiently decoded using an energy minimization technique provided the density of errors does not exceed the per-site percolation threshold of the encoded graph. We test the hybrid scheme using a D-Wave Two processor on problems for which the encoded graph is a two-level grid and the Ising model is known to be NP-hard. The problems we consider are frustrated Ising model problem instances with "planted" (a priori known) solutions. Applied in conjunction with optimized energy penalties and decoding techniques, we find that this approach enables the quantum annealer to solve minor embedded instances with significantly higher success probability than it would without error correction. Our work demonstrates that quantum annealing correction can and should be used to improve the robustness of quantum annealing not only for natively embeddable problems but also when minor embedding is used to extend the connectivity of physical devices.

  4. Annealing Increases Stability Of Iridium Thermocouples

    Science.gov (United States)

    Germain, Edward F.; Daryabeigi, Kamran; Alderfer, David W.; Wright, Robert E.; Ahmed, Shaffiq

    1989-01-01

    Metallurgical studies carried out on samples of iridium versus iridium/40-percent rhodium thermocouples in condition received from manufacturer. Metallurgical studies included x-ray, macroscopic, resistance, and metallographic studies. Revealed large amount of internal stress caused by cold-working during manufacturing, and large number of segregations and inhomogeneities. Samples annealed in furnace at temperatures from 1,000 to 2,000 degree C for intervals up to 1 h to study effects of heat treatment. Wire annealed by this procedure found to be ductile.

  5. Thermal annealing of tilted fiber Bragg gratings

    Science.gov (United States)

    González-Vila, Á.; Rodríguez-Cobo, L.; Mégret, P.; Caucheteur, C.; López-Higuera, J. M.

    2016-05-01

    We report a practical study of the thermal decay of cladding mode resonances in tilted fiber Bragg gratings, establishing an analogy with the "power law" evolution previously observed on uniform gratings. We examine how this process contributes to a great thermal stability, even improving it by means of a second cycle slightly increasing the annealing temperature. In addition, we show an improvement of the grating spectrum after annealing, with respect to the one just after inscription, which suggests the application of this method to be employed to improve saturation issues during the photo-inscription process.

  6. Thermal annealing in neutron-irradiated tribromobenzenes

    DEFF Research Database (Denmark)

    Siekierska, K.E.; Halpern, A.; Maddock, A. G.

    1968-01-01

    The distribution of 82Br among various products in neutron-irradiated isomers of tribromobenzene has been investigated, and the effect of thermal annealing examined. Reversed-phase partition chromatography was employed for the determination of radioactive organic products, and atomic bromine...... in the crystals was estimated by means of the 1,2-dibromoethylene exchange technique. The results suggest that, as a consequence of nuclear events, quite a number of different reactions occur whereas the principal annealing reaction is a recombination of atomic bromine with a dibromophenyl radical....

  7. Positron prevacancy effects in pure annealed metals

    International Nuclear Information System (INIS)

    The low-temperature prevacancy effects sometimes observed with positrons in well-annealed high-purity metals are discussed. It is shown that these effects are not experimental artifacts, but are due to trapping of the positrons. It is suggested that dislocations are responsible for these trapping effects. 46 references, 5 figures

  8. Structural relaxation in annealed hyperquenched basaltic glasses

    DEFF Research Database (Denmark)

    Guo, Xiaoju; Mauro, John C.; Potuzak, M.;

    2012-01-01

    The enthalpy relaxation behavior of hyperquenched (HQ) and annealed hyperquenched (AHQ) basaltic glass is investigated through calorimetric measurements. The results reveal a common onset temperature of the glass transition for all the HQ and AHQ glasses under study, indicating that the primary...

  9. Annealing Ni nanocrystalline on WC-Co

    International Nuclear Information System (INIS)

    The effects of annealing temperature on nanocrystalline sputter-deposited Ni thin films (500 nm) deposited on WC-Co (4 wt.%) were investigated. Special attention was focused on quantitative evaluation of residual stress and Ni diffusion into the WC-Co, after heat treatment, from 873 to 1273 K. The estimated level of residual stress, as measured by X-ray diffraction, is around -1.3 ± 0.1 GPa for the as-deposited film, whereas after annealing at 1273 K it decreases significantly. Atomic force microscopy shows that high annealing temperature results into an exponential increase of the roughness. An intermixing between the nanocrystalline Ni and the Co from WC substrate occurs, as it is revealed by quantitative depth-resolved Rutherford backscattering spectrometry analysis and also supported by X-ray photoelectron spectroscopy. We ascribe a significant stress relief with the increasing annealing temperature to the diffusion process. The understanding of this process is particularly important in WC-Co parts with the surface treated with Ni in order to improve the maximum surface service temperature.

  10. Annealing Ni nanocrystalline on WC-Co

    Energy Technology Data Exchange (ETDEWEB)

    Fernandes, C.M.; Guisbiers, G.; Pereira, S. [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Barradas, N.P.; Alves, E. [Nuclear and Technological Institute, E.N. 10, 2686-953 Sacavem (Portugal); Senos, A.M.R., E-mail: anamor@ua.p [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Vieira, M.T. [Mechanical Engineering Department, ICEMS, Polo II, 3030-201 Coimbra (Portugal)

    2009-08-12

    The effects of annealing temperature on nanocrystalline sputter-deposited Ni thin films (500 nm) deposited on WC-Co (4 wt.%) were investigated. Special attention was focused on quantitative evaluation of residual stress and Ni diffusion into the WC-Co, after heat treatment, from 873 to 1273 K. The estimated level of residual stress, as measured by X-ray diffraction, is around -1.3 +- 0.1 GPa for the as-deposited film, whereas after annealing at 1273 K it decreases significantly. Atomic force microscopy shows that high annealing temperature results into an exponential increase of the roughness. An intermixing between the nanocrystalline Ni and the Co from WC substrate occurs, as it is revealed by quantitative depth-resolved Rutherford backscattering spectrometry analysis and also supported by X-ray photoelectron spectroscopy. We ascribe a significant stress relief with the increasing annealing temperature to the diffusion process. The understanding of this process is particularly important in WC-Co parts with the surface treated with Ni in order to improve the maximum surface service temperature.

  11. Interference Alignment Using Variational Mean Field Annealing

    DEFF Research Database (Denmark)

    Badiu, Mihai Alin; Guillaud, Maxime; Fleury, Bernard Henri

    2014-01-01

    We study the problem of interference alignment in the multiple-input multiple- output interference channel. Aiming at minimizing the interference leakage power relative to the receiver noise level, we use the deterministic annealing approach to solve the optimization problem. In the corresponding...

  12. Laser annealing of amorphous silicon core optical fibers

    OpenAIRE

    Healy, N; Mailis, S.; Day, T. D.; Sazio, P.J.A.; Badding, J. V.; A.C. Peacock

    2012-01-01

    Laser annealing of an optical fiber with an amorphous silicon core is demonstrated. The annealing process produces a fiber that has a highly crystalline core, whilst reducing the optical transmission losses by ~3 orders of magnitude.

  13. Hypocoercivity in metastable settings and kinetic simulated annealing

    OpenAIRE

    Monmarché, Pierre

    2015-01-01

    Classical analysis of the simulated annealing algorithm is combined with the more recent hypocoercive method of distorted entropy to prove the convergence for large time of the kinetic Langevin annealing with logarithmic cooling schedule.

  14. Cauchy Annealing Schedule: An Annealing Schedule for Boltzmann Selection Scheme in Evolutionary Algorithms

    OpenAIRE

    Dukkipati, Ambedkar; Murty, Narasimha M; Bhatnagar, Shalabh

    2004-01-01

    Boltzmann selection is an important selection mechanism in evolutionary algorithms as it has theoretical properties which help in theoretical analysis. However, Boltzmann selection is not used in practice because a good annealing schedule for the `inverse temperature' parameter is lacking. In this paper we propose a Cauchy annealing schedule for Boltzmann selection scheme based on a hypothesis that selection-strength should increase as evolutionary process goes on and distance between two sel...

  15. Aplikasi Simulasi Annealing Untuk Menyelesaikan Traveling Salesman Problem

    OpenAIRE

    Larasati, Tuti

    2012-01-01

    Traveling salesman problem is one of combinatorial optimization problems that aim to obtain an optimal solution which determines the route that most minimum. And to resolve and find solutions to these problems one algorithm to be used is simulated annealing. Simulated annealing is an analogy of a liquid metals cooling process called annealing. Annealing is the metallurgical process of heating up a solid and then cooling slowly until it crystallizes. At this final task will shown an analogy an...

  16. Corrosion Behaviour of Annealed Cnx/Tiny Multilayers

    Institute of Scientific and Technical Information of China (English)

    ZHANG Guo-dong; PAN Chun-xu; FU Qiang; ZHANG Fu-ju; ZOU Yang; ZHANG Shao-hua

    2004-01-01

    The corrosion behaviour of annealed CNx/TiNy multilayers have been investigated using potentiodynamic test in a 0.5MH2SO4 solution. The coating has been deposited on W6Mo5Cr4V2 steel by reactive magnetron sputtering and then annealed at different temperature. The annealed multilayers showed superior corrosion resistance as compared to the as-deposited coating. The corrosion model of annealed CNx/TiNy multilayers has been set up.

  17. Corrosion Behaviour of Annealed Cnx/Tiny Multilayers

    Institute of Scientific and Technical Information of China (English)

    ZHANGGuo-dong; PANChun-xu; FUQiang; ZHANGFu-ju; ZOUYang; ZHANGShao-hua

    2004-01-01

    The corrosion behaviour of annealed CNx/TiNy multilayers have been investigated using potentiodynamic test in a 0.5MH2SO4 solution. The coating has been deposited on W6MoSCr4V2 steel by reactive magnetron sputtering and then annealed at different temperature. The annealed multilayers showed superior corrosion resistance as compared to the as-deposited coating, The corrosion model of annealed CNx/TiNy multilayers has been set up.

  18. Simulated Annealing with Tsallis Weights - A Numerical Comparison

    OpenAIRE

    Hansmann, Ulrich H.E.

    1997-01-01

    We discuss the use of Tsallis generalized mechanics in simulated annealing algorithms. For a small peptide it is shown that older implementations are not more effective than regular simulated annealing in finding ground state configurations. We propose a new implementation which leads to an improvement over regular simulated annealing.

  19. On lumped models for thermodynamic properties of simulated annealing problems

    OpenAIRE

    Andresen, Bjarne; Hoffmann, Karl Heinz; Mosegaard, Klaus; Nulton, Jim; Pedersen, Jacob Mørch; Salamon, Peter

    1988-01-01

    The paper describes a new method for the estimation of thermodynamic properties for simulated annealing problems using data obtained during a simulated annealing run. The method works by estimating energy-to-energy transition probabilities and is well adapted to simulations such as simulated annealing, in which the system is never in equilibrium.

  20. Stored energy and annealing behavior of heavily deformed aluminium

    DEFF Research Database (Denmark)

    Kamikawa, Naoya; Huang, Xiaoxu; Kondo, Yuka;

    2012-01-01

    It has been demonstrated in previous work that a two-step annealing treatment, including a low-temperature, long-time annealing and a subsequent high-temperature annealing, is a promising route to control the microstructure of a heavily deformed metal. In the present study, structural parameters ...

  1. An Effect of Annealing on Shielding Properties of Shungite

    Science.gov (United States)

    Belousova, E. S.; Mahmoud, M. Sh.; Lynkou, L. M.

    2013-05-01

    Annealing of shungite is studied in oxidizing conditions in a chamber with NH4Cl, and in vacuum at 900 °C for 2h. Frequency dependencies of transmission and reflection coefficients of annealed shungite are measured in the frequency range of 8-12 GHz. The minimum reflection at 8-10 GHz was shown for shungite annealed in the oxidizing atmosphere.

  2. Comparison of Poly-Si Thin Films Prepared by Conventional Furnace Annealing and Pulsed Rapid Thermal Annealing

    Institute of Scientific and Technical Information of China (English)

    JIN Rui-min; ZHENG Xiao-yan; CHEN Lan-li; LUO Peng-hui; GUO Xin-feng; LU Jing-xiao

    2009-01-01

    Amorphous silicon films prepared by PECVD on glass substrate were crystallized by conventional furnace annealing (FA) and rapid thermal annealing ( RTA),respectively. From the Raman spectra and scanning electronic microscope(SEM),it found that the thin films made by RTA had smooth and perfect structure,while the thin films annealed by FA had a higher degree of structural disorder.

  3. Simulated annealing in orbital flight planning

    Science.gov (United States)

    Soller, Jeffrey

    1990-01-01

    Simulated annealing is used to solve a minimum fuel trajectory problem in the space station environment. The environment is unique because the space station will define the first true multivehicle environment in space. The optimization yields surfaces which are potentially complex, with multiple local minima. Because of the likelihood of these local minima, descent techniques are unable to offer robust solutions. Other deterministic optimization techniques were explored without success. The simulated annealing optimization is capable of identifying a minimum-fuel, two-burn trajectory subject to four constraints. Furthermore, the computational efforts involved in the optimization are such that missions could be planned on board the space station. Potential applications could include the on-site planning of rendezvous with a target craft of the emergency rescue of an astronaut. Future research will include multiwaypoint maneuvers, using a knowledge base to guide the optimization.

  4. Code Generator for Quantum Simulated Annealing

    CERN Document Server

    Tucci, Robert R

    2009-01-01

    This paper introduces QuSAnn v1.2 and Multiplexor Expander v1.2, two Java applications available for free. (Source code included in the distribution.) QuSAnn is a "code generator" for quantum simulated annealing: after the user inputs some parameters, it outputs a quantum circuit for performing simulated annealing on a quantum computer. The quantum circuit implements the algorithm of Wocjan et al. (arXiv:0804.4259), which improves on the original algorithm of Somma et al. (arXiv:0712.1008). The quantum circuit generated by QuSAnn includes some quantum multiplexors. The application Multiplexor Expander allows the user to replace each of those multiplexors by a sequence of more elementary gates such as multiply controlled NOTs and qubit rotations.

  5. Shock, Post-Shock Annealing, and Post-Annealing Shock in Ureilites

    Science.gov (United States)

    Rubin, Alan E.

    2006-01-01

    The thermal and shock histories of ureilites can be divided into four periods: 1) formation, 2) initial shock, 3) post-shock annealing, and 4) post-annealing shock. Period 1 occurred approx.4.55 Ga ago when ureilites formed by melting chondritic material. Impact events during period 2 caused silicate darkening, undulose to mosaic extinction in olivines, and the formation of diamond, lonsdaleite, and chaoite from indigenous carbonaceous material. Alkali-rich fine-grained silicates may have been introduced by impact injection into ureilites during this period. About 57% of the ureilites were unchanged after period 2. During period 3 events, impact-induced annealing caused previously mosaicized olivine grains to become aggregates of small unstrained crystals. Some ureilites experienced reduction as FeO at the edges of olivine grains reacted with C from the matrix. Annealing may also be responsible for coarsening of graphite in a few ureilites, forming euhedral-appearing, idioblastic crystals. Orthopyroxene in Meteorite Hills (MET) 78008 may have formed from pigeonite by annealing during this period. The Rb-Sr internal isochron age of approx.4.0 Ga for MET 78008 probably dates the annealing event. At this late date, impacts are the only viable heat source. About 36% of ureilites experienced period 3 events, but remained unchanged afterwards. During period 4, approx.7% of the ureilites were shocked again, as is evident in the polymict breccia, Elephant Moraine (EET) 83309. This rock contains annealed mosaicized olivine aggregates composed of small individual olivine crystals that exhibit undulose extinction. Ureilites may have formed by impact-melting chondritic material on a primitive body with heterogeneous O isotopes. Plagioclase was preferentially lost from the system due to its low impedance to shock compression. Brief melting and rapid burial minimized the escape of planetary-type noble gases from the ureilitic melts. Incomplete separation of metal from silicates

  6. Annealing of Solar Cells and Other Thin Film Devices

    Science.gov (United States)

    Escobar, Hector; Kuhlman, Franz; Dils, D. W.; Lush, G. B.; Mackey, Willie R. (Technical Monitor)

    2001-01-01

    Annealing is a key step in most semiconductor fabrication processes, especially for thin films where annealing enhances performance by healing defects and increasing grain sizes. We have employed a new annealing oven for the annealing of CdTe-based solar cells and have been using this system in an attempt to grow US on top of CdTe by annealing in the presence of H2S gas. Preliminary results of this process on CdTe solar cells and other thin-film devices will be presented.

  7. Simulated annealing algorithm for optimal capital growth

    Science.gov (United States)

    Luo, Yong; Zhu, Bo; Tang, Yong

    2014-08-01

    We investigate the problem of dynamic optimal capital growth of a portfolio. A general framework that one strives to maximize the expected logarithm utility of long term growth rate was developed. Exact optimization algorithms run into difficulties in this framework and this motivates the investigation of applying simulated annealing optimized algorithm to optimize the capital growth of a given portfolio. Empirical results with real financial data indicate that the approach is inspiring for capital growth portfolio.

  8. MEDICAL STAFF SCHEDULING USING SIMULATED ANNEALING

    OpenAIRE

    Ladislav Rosocha; Silvia Vernerova; Robert Verner

    2015-01-01

    Purpose: The efficiency of medical staff is a fundamental feature of healthcare facilities quality. Therefore the better implementation of their preferences into the scheduling problem might not only rise the work-life balance of doctors and nurses, but also may result into better patient care. This paper focuses on optimization of medical staff preferences considering the scheduling problem. Methodology/Approach: We propose a medical staff scheduling algorithm based on simulated annealing, a...

  9. MEDICAL STAFF SCHEDULING USING SIMULATED ANNEALING

    OpenAIRE

    Ladislav Rosocha; Silvia Vernerova; Robert Verner

    2015-01-01

    Purpose: The efficiency of medical staff is a fundamental feature of healthcare facilities quality. Therefore the better implementation of their preferences into the scheduling problem might not only rise the work-life balance of doctors and nurses, but also may result into better patient care. This paper focuses on optimization of medical staff preferences considering the scheduling problem.Methodology/Approach: We propose a medical staff scheduling algorithm based on simulated annealing, a ...

  10. Pyrolytic citrate synthesis and ozone annealing

    International Nuclear Information System (INIS)

    A pyrolytic procedure is described that via a citrate synthesis allowed us to obtain very fine grained YBCO powders that, after a first furnace thermal treatment in ozone, results already to contain a large amount of superconducting microcrystals. A second identical thermal treatment gives a final product strongly textured, as shown by magnetic torque measurements. Complementary structural and diamagnetic measurement show the high quality of these sintered pellets. The role covered by both the pyrolytic preparation and the ozone annealing are discussed

  11. Pyrolitic citrate synthesis and ozone annealing

    International Nuclear Information System (INIS)

    A pyrolytic procedure that via a citrate synthesis allowed to obtain very fine grained YBCO powders that, after a first furnace thermal treatment in ozone, result already to contain a large amount of superconducting microcystals is described. A second identical thermal treatment gives a final product strongly textured, as shown by magnetic torque measurements. Complementary structural and diamagnetic measurements show the high quality of these sintered pellets. The role covered by both the pyrolytic preparation and the ozone annealing are discussed

  12. Using Simulated Annealing to Factor Numbers

    OpenAIRE

    Altschuler, Eric Lewin; Williams, Timothy J.

    2014-01-01

    Almost all public secure communication relies on the inability to factor large numbers. There is no known analytic or classical numeric method to rapidly factor large numbers. Shor[1] has shown that a quantum computer can factor numbers in polynomial time but there is no practical quantum computer that can yet do such computations. We show that a simulated annealing[2] approach can be adapted to find factors of large numbers.

  13. Laser-annealing of thin semiconductor films

    OpenAIRE

    Boneberg, Johannes; Nedelcu, Johann; Bucher, Ernst; Leiderer, Paul

    1994-01-01

    Optical reflectivity and transmissivity measurements have been used to investigate the dynamics of melting and recrystallisation of thin films of Si and Ge after laser-annealing with a ns Nd:YAG-laser pulse. We report on temperature dependent changes of the reflectivity of the liquid phase above and below the melting point and on various nucleation and solidification scenarios in thin film, depending on the energy density of the amding laser.

  14. Quantum wavefunction annealing of spin glasses

    CERN Document Server

    Rodríguez-Laguna, J

    2007-01-01

    A technique inspired on quantum annealing is proposed in order to obtain the classical ground state of a spin-glass by tracking the full wavefunction of a given system within the subspace of matrix product states (MPS), using the density matrix renormalization group (DMRG). The technique is exemplified within the problem of obtention of the classical ground state of an Ising spin glass on ladder geometries. Its performance is evaluated and related to the entanglement entropy.

  15. Annealing texture of nanostructured IF steel

    International Nuclear Information System (INIS)

    In the present work, the evolution of annealing texture in nanostructured interstitial free steel fabricated via accumulative roll bonding (ARB) process was investigated. Textural evolution after post-annealing of ARB-processed samples was evaluated using X-ray diffraction. There were several texture transitions in the γ-fiber and ζ-fiber during ARB and post-annealing treatment. It was found that with increasing the number of ARB cycles, the volume fraction of the low angle grain boundary decreased and the high angle grain boundary fraction increased. Also, the shear texture was dominant after the first cycle, while for other samples, the rolling texture was dominant. The one-cycle sample clearly indicated a weak α-fiber and γ-fiber and a relatively strong ζ-fiber. In addition, during the recrystallization and before the grain growth, the intensity of α-fiber and γ-fiber decreased, the intensity of ζ-fiber increased, and the intensity of (011)〈100〉 orientation in the ε-fiber and η-fiber increased. Moreover, it was concluded that the transition from the rolling texture to the shear one was a sign of occurrence of the recrystallization (before the grain growth). Finally, with increasing the number of ARB cycles, the intensity of rolling and shear textures saturated and a stable texture formed. - Highlights: • There were texture transitions in the γ-fiber and ζ-fiber. • When the number of cycles increased, the low angle grain boundaries decreased. • The shear texture was dominant after the first cycle. • Transition from rolling texture to shear one was a sign of recrystallization. • With increasing the number of ARB cycles, a stable texture formed

  16. Error correction for encoded quantum annealing

    Science.gov (United States)

    Pastawski, Fernando; Preskill, John

    2016-05-01

    Recently, W. Lechner, P. Hauke, and P. Zoller [Sci. Adv. 1, e1500838 (2015), 10.1126/sciadv.1500838] have proposed a quantum annealing architecture, in which a classical spin glass with all-to-all pairwise connectivity is simulated by a spin glass with geometrically local interactions. We interpret this architecture as a classical error-correcting code, which is highly robust against weakly correlated bit-flip noise, and we analyze the code's performance using a belief-propagation decoding algorithm. Our observations may also apply to more general encoding schemes and noise models.

  17. Annealing relaxation of ultrasmall gold nanostructures

    Science.gov (United States)

    Chaban, Vitaly

    2015-01-01

    Except serving as an excellent gift on proper occasions, gold finds applications in life sciences, particularly in diagnostics and therapeutics. These applications were made possible by gold nanoparticles, which differ drastically from macroscopic gold. Versatile surface chemistry of gold nanoparticles allows coating with small molecules, polymers, biological recognition molecules. Theoretical investigation of nanoscale gold is not trivial, because of numerous metastable states in these systems. Unlike elsewhere, this work obtains equilibrium structures using annealing simulations within the recently introduced PM7-MD method. Geometries of the ultrasmall gold nanostructures with chalcogen coverage are described at finite temperature, for the first time.

  18. Binary Sparse Phase Retrieval via Simulated Annealing

    Directory of Open Access Journals (Sweden)

    Wei Peng

    2016-01-01

    Full Text Available This paper presents the Simulated Annealing Sparse PhAse Recovery (SASPAR algorithm for reconstructing sparse binary signals from their phaseless magnitudes of the Fourier transform. The greedy strategy version is also proposed for a comparison, which is a parameter-free algorithm. Sufficient numeric simulations indicate that our method is quite effective and suggest the binary model is robust. The SASPAR algorithm seems competitive to the existing methods for its efficiency and high recovery rate even with fewer Fourier measurements.

  19. Annealing-induced Ge/Si(100) island evolution

    International Nuclear Information System (INIS)

    Ge/Si(100) islands were found to coarsen during in situ annealing at growth temperature. Islands were grown by molecular-beam epitaxy of pure Ge and annealed at substrate temperatures of T=450, 550, 600, and 650 deg. C, with Ge coverages of 6.5, 8.0, and 9.5 monolayers. Three coarsening mechanisms operate in this temperature range: wetting-layer consumption, conventional Ostwald ripening, and Si interdiffusion. For samples grown and annealed at T=450 deg. C, consumption of a metastably thick wetting layer causes rapid initial coarsening. Slower coarsening at longer annealing times occurs by conventional Ostwald ripening. Coarsening of samples grown and annealed at T=550 deg. C occurs via a combination of Si interdiffusion and conventional Ostwald ripening. For samples grown and annealed at T≥600 deg. C, Ostwald ripening of SiGe alloy clusters appears to be the dominant coarsening mechanism

  20. Microstructural evolution of ECAPed 1050 alloy under magnetic annealing

    Science.gov (United States)

    Cao, Yi-heng; Jia, Pin-feng; Wang, Kang; He, Li-zi; Wang, Ping; Cui, Jian-zhong

    2014-12-01

    Hardness and microstructure evolutions in 1050 aluminum alloy prepared by equal-channel angular pressing (ECAP) were investigated by hardness testing, optical microscopy, and transmission electron microscopy after samples were annealed at different temperatures for 1 h both in the absence and presence of a 12-T magnetic field. The results showed that the hardness of samples after magnetic annealing were lower than that of samples after normal annealing at 150-250°C, but it was higher than that of samples after normal annealing at >250°C. During annealing, the rate of softening was faster, and the grains were more homogeneous in 8-ECAPed samples than in 2-ECAPed samples. A rapid grain growth occurred when 2-ECAPed samples were annealed at high temperature (≥300°C). The magnetic field enhanced the mobility of dislocations and grain boundaries. A more homogeneous grain size was observed in samples prepared under an applied magnetic field.

  1. Study on thermal annealing of cadmium zinc telluride (CZT) crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yang, G.; Bolotnikov, A.E.; Fochuk, P.M.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; Horace, J.; McCall, B.; Gul, R.; Xu, L.; Kopach, O.V.; and James, R.B.

    2010-08-01

    Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

  2. Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon

    Directory of Open Access Journals (Sweden)

    Afarin Bahrami

    2012-01-01

    Full Text Available Porous silicon (PSi layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm2 fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM. Photoacoustic spectroscopy (PAS measurements were carried out to measure the thermal diffusivity (TD of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing.

  3. The role of particles annealing temperature on magnetorheological effect

    OpenAIRE

    Sedlačík, M.; Pavlínek, V.; Sáha, P.; Švrčinová, P. (Petra); Filip, P.

    2012-01-01

    The spinel nanocrystalline cobalt ferrite (CoFe.sub.2./sub.O.sub.4./sub.) particles were prepared via a solgel method followed by the annealing process. Their structural, magnetic and magnetorheological (MR) properties depending upon the annealing temperature were investigated. The X-ray diffraction analysis revealed that the higher annealing temperature, the larger grain size of CoFe.sub.2./sub.O.sub.4./sub. particles resulting in larger magnetic domains in particles. The saturation magnetiz...

  4. Measures of Fault Tolerance in Distributed Simulated Annealing

    OpenAIRE

    Prakash, Aaditya

    2012-01-01

    In this paper, we examine the different measures of Fault Tolerance in a Distributed Simulated Annealing process. Optimization by Simulated Annealing on a distributed system is prone to various sources of failure. We analyse simulated annealing algorithm, its architecture in distributed platform and potential sources of failures. We examine the behaviour of tolerant distributed system for optimization task. We present possible methods to overcome the failures and achieve fault tolerance for t...

  5. The role of particles annealing temperature on magnetorheological effect

    OpenAIRE

    Sedlačík, M.; Pavlínek, V.; Sáha, P.; Švrčinová, P. (Petra); Filip, P.

    2011-01-01

    The spinel cobalt ferrite (CoFe.sub.2./sub.O.sub.4./sub.) nanoparticles were prepared via a sol-gel method followed by the annealing process. Their structural, magnetic and magnetorheological (MR) properties depending upon the annealing temperature were investigated. The X-ray diffraction analysis revealed that the higher annealing temperature, the larger grain size of CoFe.sub.2./sub.O.sub.4./sub. particles resulting in larger magnetic domains in particles. The saturation magnetization, dete...

  6. Simulated Annealing of Two Electron Density Solution Systems

    OpenAIRE

    Neto, Mario de Oliveira; Alonso, Ronaldo Luiz; Leite, Fabio Lima; Jr, Osvaldo N. Oliveira; Polikarpov, Igor; Mascarenhas, Yvonne Primerano

    2008-01-01

    Many structural studies have been performed with a combination of SAXS and simulated annealing to reconstruct three dimensional models. Simulated annealing is suitable for the study of monodisperse, diluted and two-electron densities systems. In this chapter we showed how the simulated annealing procedure can be used to minimize the discrepancy between two functions: the simulated intensity and the experimental one-dimensional SAXS curve. The goal was to find the most probable form for a prot...

  7. Tunneling through high energy barriers in simulated quantum annealing

    OpenAIRE

    Crosson, Elizabeth; Deng, Mingkai

    2014-01-01

    We analyze the performance of simulated quantum annealing (SQA) on an optimization problem for which simulated classical annealing (SA) is provably inefficient because of a high energy barrier. We present evidence that SQA can pass through this barrier to find the global minimum efficiently. This demonstrates the potential for SQA to inherit some of the advantages of quantum annealing (QA), since this problem has been previously shown to be efficiently solvable by quantum adiabatic optimization.

  8. Annealing-induced Grain Refinement in a Nanostructured Ferritic Steel

    Institute of Scientific and Technical Information of China (English)

    Limin Wang; Zhenbo Wangt; Sheng Guo; Ke Lu

    2012-01-01

    A nanostructured surface layer with a mean ferrite grain size of -8 nm was produced on a Fe-gCr steel by means of surface mechanical attrition treatment. Upon annealing, ferrite grains coarsen with increasing temperature and their sizes increase to -40 nm at 973 K. Further increasing annealing temperature leads to an obvious reduction of ferrite grain sizes, to -14 nm at 1173 K. The annealing-induced grain refinement is analyzed in terms of phase transformations in the nanostructured steel.

  9. ANNEALING OF HOT-CARRIER-INDUCED MOSFET DEGRADATION

    OpenAIRE

    Mahnkopf, R.; Przyrembel, G.; Wagemann, H.

    1988-01-01

    The annealing of fixed oxide charge and interface states generated by hot-carrier stress is investigated in the temperature range of 100°C - 450°C. First order rate equations are given, which approximately describe two subsequent processes involved in the annealing and ending at neutralization. The related activation energies are determined. For comparison the annealing of synchrotron light induced damage is examined.

  10. Annealing effect and stability of carbon nanotubes in hydrogen flame

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Annealing of carbon nanotubes (CNTs) by the hydrogen flame in air was investigated in this study. Raman spectroscopy and scanning electron microscopy were used to characterize the products. The peak width of Raman spectra decreased with the increase in the annealing time. The CNTs were not stable in the hydrogen flame and the etching rate of the CNTs by hydrogen flame was very high. The hydrogen flame annealing had some effects on improving the crystallinity of CNTs.

  11. Annealing Would Improve beta" - Alumina Solid Electrolyte

    Science.gov (United States)

    Williams, Roger; Homer, Margie; Ryan, Margaret; Cortez, Roger; Shields, Virgil; Kisor, Adam

    2003-01-01

    A pre-operational annealing process is under investigation as a potential means of preventing a sudden reduction of ionic conductivity in a Beta"-alumina solid electrolyte (BASE) during use. On the basis of tests, the sudden reduction of ionic conductivity, followed by a slow recovery, has been found to occur during testing of the solid electrolyte and electrode components of an alkali metal thermal-to-electric converter (AMTEC) cell. At this time, high-temperature tests of limited duration have indicated the superiority of the treated BASE, but reproducible tests over thousands of hours are necessary to confirm that microcracking has been eliminated. The ionic conductivity of the treated BASE is also measured to be higher than untreated BASE at 1,073 K in low-pressure sodium vapor. Microcracking resulting in loss of conductivity was not observed with treated BASE in one high-temperature experiment, but this result must be duplicated over very long testing times to be sure of the effect. Shorter annealing times (10 to 20 hours) were found to result in significantly less loss of mass; it may be necessary for the packed powder mixture to evolve some Na2O before the Na2O can leave the ceramic.

  12. MEDICAL STAFF SCHEDULING USING SIMULATED ANNEALING

    Directory of Open Access Journals (Sweden)

    Ladislav Rosocha

    2015-07-01

    Full Text Available Purpose: The efficiency of medical staff is a fundamental feature of healthcare facilities quality. Therefore the better implementation of their preferences into the scheduling problem might not only rise the work-life balance of doctors and nurses, but also may result into better patient care. This paper focuses on optimization of medical staff preferences considering the scheduling problem.Methodology/Approach: We propose a medical staff scheduling algorithm based on simulated annealing, a well-known method from statistical thermodynamics. We define hard constraints, which are linked to legal and working regulations, and minimize the violations of soft constraints, which are related to the quality of work, psychic, and work-life balance of staff.Findings: On a sample of 60 physicians and nurses from gynecology department we generated monthly schedules and optimized their preferences in terms of soft constraints. Our results indicate that the final value of objective function optimized by proposed algorithm is more than 18-times better in violations of soft constraints than initially generated random schedule that satisfied hard constraints.Research Limitation/implication: Even though the global optimality of final outcome is not guaranteed, desirable solutionwas obtained in reasonable time. Originality/Value of paper: We show that designed algorithm is able to successfully generate schedules regarding hard and soft constraints. Moreover, presented method is significantly faster than standard schedule generation and is able to effectively reschedule due to the local neighborhood search characteristics of simulated annealing.

  13. Annealing conditions for intrinsic CdTe

    Science.gov (United States)

    Berding, M. A.

    1999-01-01

    Equilibrium native defect densities in CdTe are calculated from ab initio methods, and compared with experimental results. We find that CdTe is highly compensated p type under tellurium-saturated conditions, with the cadmium vacancy as the dominant acceptor and the tellurium antisite as the compensating donor. This finding is in agreement with recent experiments that find a much larger deviation from stoichiometry than would be predicted by the electrically active defects. Under cadmium-saturated conditions, cadmium interstitials are predicted to dominate and the material is found to be n type. Native defect concentrations and the corresponding carrier concentrations are predicted as a function of processing conditions, and can serve as a guide to postgrowth anneals to manipulate the conductivity of undoped material for applications in x- and γ-ray spectrometers. Furthermore, we show that by choosing appropriate annealing conditions and extrinsic dopants, one can increase the operating efficiency of nuclear spectrometers by reducing the density of specific native defects that produce midgap trapping states.

  14. Magnetic field annealing for improved creep resistance

    Science.gov (United States)

    Brady, Michael P.; Ludtka, Gail M.; Ludtka, Gerard M.; Muralidharan, Govindarajan; Nicholson, Don M.; Rios, Orlando; Yamamoto, Yukinori

    2015-12-22

    The method provides heat-resistant chromia- or alumina-forming Fe-, Fe(Ni), Ni(Fe), or Ni-based alloys having improved creep resistance. A precursor is provided containing preselected constituents of a chromia- or alumina-forming Fe-, Fe(Ni), Ni(Fe), or Ni-based alloy, at least one of the constituents for forming a nanoscale precipitate MaXb where M is Cr, Nb, Ti, V, Zr, or Hf, individually and in combination, and X is C, N, O, B, individually and in combination, a=1 to 23 and b=1 to 6. The precursor is annealed at a temperature of 1000-1500.degree. C. for 1-48 h in the presence of a magnetic field of at least 5 Tesla to enhance supersaturation of the M.sub.aX.sub.b constituents in the annealed precursor. This forms nanoscale M.sub.aX.sub.b precipitates for improved creep resistance when the alloy is used at service temperatures of 500-1000.degree. C. Alloys having improved creep resistance are also disclosed.

  15. Ballistic self-annealing during ion implantation

    International Nuclear Information System (INIS)

    Ion implantation conditions are considered during which the energy, dissipated in the collision cascades, is low enough to ensure that the defects, which are generated during these collisions, consist primarily of vacancies and interstitial atoms. It is proposed that ballistic self-annealing is possible when the point defect density becomes high enough, provided that none, or very few, of the interstitial atoms escape from the layer being implanted. Under these conditions, the fraction of ballistic atoms, generated within the collision cascades from substitutional sites, decreases with increasing ion dose. Furthermore, the fraction of ballistic atoms, which finally end up within vacancies, increases with increasing vacancy density. Provided the crystal structure does not collapse, a damage threshold should be approached where just as many atoms are knocked out of substitutional sites as the number of ballistic atoms that fall back into vacancies. Under these conditions, the average point defect density should approach saturation. This model is applied to recently published Raman data that have been measured on a 3 MeV He+-ion implanted diamond (Orwa et al 2000 Phys. Rev. B 62 5461). The conclusion is reached that this ballistic self-annealing model describes the latter data better than a model in which it is assumed that the saturation in radiation damage is caused by amorphization of the implanted layer. (author)

  16. Dielectric Signatures of Annealing in Glacier Ice

    Science.gov (United States)

    Grimm, R. E.; Stillman, D. E.; MacGregor, J. A.

    2015-12-01

    We analyzed the dielectric spectra of 49 firn and ice samples from ice sheets and glaciers to better understand how differing ice formation and evolution affect electrical properties. The dielectric relaxation of ice is well known and its characteristic frequency increases with the concentration of soluble impurities in the ice lattice. We found that meteoric ice and firn generally possess two such relaxations, indicating distinct crystal populations or zonation. Typically, one population is consistent with that of relatively pure ice, and the other is significantly more impure. However, high temperatures (e.g., temperate ice), long residence times (e.g., ancient ice from Mullins Glacier, Antarctica), or anomalously high impurity concentrations favor the development of a single relaxation. These relationships suggest that annealing causes two dielectrically distinct populations to merge into one population. The dielectric response of temperate ice samples indicates increasing purity with increasing depth, suggesting final rejection of impurities from the lattice. Separately, subglacially frozen samples from the Vostok 5G ice core possess a single relaxation whose variable characteristic frequency likely reflects the composition of the source water. Multi-frequency electrical measurements on cores and in the field can track annealing of glacier ice.

  17. Burst annealing of high temperature GaAs solar cells

    Science.gov (United States)

    Brothers, P. R.; Horne, W. E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

  18. A Parallel Genetic Simulated Annealing Hybrid Algorithm for Task Scheduling

    Institute of Scientific and Technical Information of China (English)

    SHU Wanneng; ZHENG Shijue

    2006-01-01

    In this paper combined with the advantages of genetic algorithm and simulated annealing, brings forward a parallel genetic simulated annealing hybrid algorithm (PGSAHA) and applied to solve task scheduling problem in grid computing .It first generates a new group of individuals through genetic operation such as reproduction, crossover, mutation, etc, and than simulated anneals independently all the generated individuals respectively.When the temperature in the process of cooling no longer falls, the result is the optimal solution on the whole.From the analysis and experiment result, it is concluded that this algorithm is superior to genetic algorithm and simulated annealing.

  19. Structure and magnetism of Ni/Ti multilayers on annealing

    Indian Academy of Sciences (India)

    Surendra Singh; Saibal Basu; P Bhatt

    2008-11-01

    Neutron reflectometry study has been carried out in unpolarized (NR) and polarized (PNR) mode to understand the structure and magnetic properties of alloy formation at the interfaces of Ni/Ti multilayers on annealing. The PNR data from annealed sample shows a noticeable change with respect to the as-deposited sample. These changes are: a prominent shift of the multilayer Bragg peak to a higher angle and a decrease in the intensity of the Bragg peak. The PNR data from annealed sample revealed the formation of magnetically dead alloy layers at the interfaces. Changes in roughness parameters of the interfaces on annealing were also observed in the PNR data.

  20. Study of the optical properties of etched alpha tracks in annealed and non-annealed CR-39 polymeric detectors

    International Nuclear Information System (INIS)

    The UV–visible absorption spectra of virgin and alpha particle-irradiated, annealed and non-annealed CR-39 polymeric track detectors were investigated using a UV–visible spectrometer (Shimadzu mini 1240). Isothermal annealing experiments were carried out on poly allyl diglycol carbonate (PADC) films based nuclear track detectors (NTDs) exposed to a 241Am source. A shifting and broadening of the UV–visible peaks was observed as a result of the etched alpha tracks in the non-annealed and annealed PADC films. The UV–visible spectra of the virgin and non-annealed α-irradiated PADC polymer films displayed a decreasing trend in their optical energy band gaps, both direct and indirect, whereas those measured for the annealed α-irradiated ones showed no significant change. This drop in the energy band gap with increasing fluence is discussed on the basis of the alpha particle- and thermal annealing-induced modifications in the PADC polymeric detector. The results clearly showed that the values for the indirect energy band gap were lower than the corresponding values for the direct band gap. In addition, the Urbach energy was estimated from the Urbach edge, and exhibited roughly the same trend as the optical band gap. Finally, this study presents new results showing that the annealed PADC films were highly insensitive to alpha particles. - Highlights: • UV–visible absorption through etched alpha tracks in annealed and non-annealed PADC films was investigated. • Films of PADC based NTDs were irradiated with different fluences from alpha particles. • PADC film samples were annealed at a temperature of 120 °C for durations of 2, 4, 6, 8, and 10 h. • It is a good method for relative fluence or dose reading

  1. Advanced activation trends for boron and arsenic by combinations of single, multiple flash anneals and spike rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Lerch, W. [Mattson Thermal Products GmbH, Daimlerstrasse 10, 89160 Dornstadt (Germany)], E-mail: wilfried.lerch@mattson.com; Paul, S.; Niess, J. [Mattson Thermal Products GmbH, Daimlerstrasse 10, 89160 Dornstadt (Germany); McCoy, S.; Gelpey, J. [Mattson Technology Canada Inc., 605 W. Kent Avenue, Vancouver, BC V6P6T7 Canada (Canada); Cristiano, F.; Severac, F. [LAAS/CNRS, 7 av. Du Col. Roche, 31077 Toulouse (France); Fazzini, P. [CEMES/CNRS, 29 rue G. Marvig, 31055 Toulouse (France); Martinez-Limia, A.; Pichler, P. [Fraunhofer-IISB, Schottkystrasse 10, 91058 Erlangen (Germany); Kheyrandish, H. [CSMA-MATS, Queens Road, Stoke on Trent ST4 7LQ (United Kingdom); Bolze, D. [IHP, Im Technologiepark 25, 15326 Frankfurt (Oder) (Germany)

    2008-12-05

    Millisecond annealing as an equipment technology provides temperature profiles which favour dopant activation but nearly eliminate dopant diffusion to form extremely shallow, highly electrically activated junctions. For the 45-nm technology node and beyond, precisely controlled gate under-diffusion is required for optimum device performance. Therefore, on boron and arsenic beamline-implanted wafers, various annealing schemes were investigated for the formation of ultra-shallow and custom-shaped junctions. The main scheme consisted of flash annealing with peak temperatures ranging from 1250 to 1300 deg. C, combined with spike rapid thermal annealing with peak temperatures in the range from 900 to 1000 deg. C to achieve a desired junction depth. As alternative, to reduce the sheet resistance of pMOS and nMOS source-drain extensions, combinations of two or three flash anneals in succession were tested. Finally, the standard flash anneal condition of a 750 deg. C intermediate temperature followed by the flash anneal was changed to a high intermediate temperature of 950 deg. C followed by the flash anneal up to 1300 deg. C. The results of all these annealing schemes were analysed by four-point probe measurement. Selected samples were analysed by Hall-effect measurements for peak activation, and by secondary ion mass spectrometry for profile shape as well as diffusion effects. Transmission electron microscopy was used to study residual defects. Selected boron and arsenic dopant profiles were also compared to predictive simulation results which address the diffusion and activation at extrinsic concentrations.

  2. Simulated annealing algorithm for detecting graph isomorphism

    Institute of Scientific and Technical Information of China (English)

    Geng Xiutang; Zhang Kai

    2008-01-01

    Evolutionary computation techniques have mostly been used to solve various optimization problems,and it is well known that graph isomorphism problem (GIP) is a nondeterministic polynomial problem.A simulated annealing (SA) algorithm for detecting graph isomorphism is proposed,and the proposed SA algorithm is well suited to deal with random graphs with large size.To verify the validity of the proposed SA algorithm,simulations are performed on three pairs of small graphs and four pairs of large random graphs with edge densities 0.5,0.1,and 0.01,respectively.The simulation results show that the proposed SA algorithm can detect graph isomorphism with a high probability.

  3. Thermoelectric properties by high temperature annealing

    Science.gov (United States)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Kumar, Shankar (Inventor); Lee, Hohyun (Inventor)

    2009-01-01

    The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.

  4. Hierarchical Network Design Using Simulated Annealing

    DEFF Research Database (Denmark)

    Thomadsen, Tommy; Clausen, Jens

    2002-01-01

    The hierarchical network problem is the problem of finding the least cost network, with nodes divided into groups, edges connecting nodes in each groups and groups ordered in a hierarchy. The idea of hierarchical networks comes from telecommunication networks where hierarchies exist. Hierarchical...... networks are described and a mathematical model is proposed for a two level version of the hierarchical network problem. The problem is to determine which edges should connect nodes, and how demand is routed in the network. The problem is solved heuristically using simulated annealing which as a sub......-algorithm uses a construction algorithm to determine edges and route the demand. Performance for different versions of the algorithm are reported in terms of runtime and quality of the solutions. The algorithm is able to find solutions of reasonable quality in approximately 1 hour for networks with 100 nodes....

  5. Simulation of annealed polyelectrolytes in poor solvents

    International Nuclear Information System (INIS)

    We present (semi-)grand canonical Monte Carlo simulations on annealed polyelectrolytes in poor solvent. Increasing the chemical potential of the charges, which is equal to the pH of the solution except for a trivial additive constant, in rather poor solvents, we find the first-order phase transition between a weakly charged globule and a highly charged extended chain predicted by theory. In the close-to-Q -point regime, we investigate under which conditions pearl-necklace structures are stable. Most of the pearl-necklace parameters are found to obey the scaling relations predicted for quenched polyelectrolytes. However, similarly to the behavior known for this class of polyelectrolytes we obtain large fluctuations in pearl number and size. In agreement with theoretical predictions we find a non-uniform charge distribution between pearls and strings

  6. Influence of preliminary annealing on sound velocity in strained polymers

    International Nuclear Information System (INIS)

    Present article is devoted to influence of preliminary annealing on sound velocity in strained polymers. The dependence of sound velocity on loading duration in natural silk at 77 Mpa and different annealing duration was studied. The structural changes occurring in strained polymers at thermal treatment were considered.

  7. Parameters Optimization of Low Carbon Low Alloy Steel Annealing Process

    Institute of Scientific and Technical Information of China (English)

    Maoyu ZHAO; Qianwang CHEN

    2013-01-01

    A suitable match of annealing process parameters is critical for obtaining the fine microstructure of material.Low carbon low alloy steel (20CrMnTi) was heated for various durations near Ac temperature to obtain fine pearlite and ferrite grains.Annealing temperature and time were used as independent variables,and material property data were acquired by orthogonal experiment design under intercritical process followed by subcritical annealing process (IPSAP).The weights of plasticity (hardness,yield strength,section shrinkage and elongation) of annealed material were calculated by analytic hierarchy process,and then the process parameters were optimized by the grey theory system.The results observed by SEM images show that microstructure of optimization annealing material are consisted of smaller lamellar pearlites (ferrite-cementite)and refining ferrites which distribute uniformly.Morphologies on tension fracture surface of optimized annealing material indicate that the numbers of dimple fracture show more finer toughness obviously comparing with other annealing materials.Moreover,the yield strength value of optimization annealing material decreases apparently by tensile test.Thus,the new optimized strategy is accurate and feasible.

  8. Simulated Annealing for Location Area Planning in Cellular networks

    OpenAIRE

    Prajapati, N. B.; R. R. Agravat; Hasan, M I

    2010-01-01

    LA planning in cellular network is useful for minimizing location management cost in GSM network. In fact, size of LA can be optimized to create a balance between the LA update rate and expected paging rate within LA. To get optimal result for LA planning in cellular network simulated annealing algorithm is used. Simulated annealing give optimal results in acceptable run-time.

  9. Simulated Annealing for Location Area Planning in Cellular networks

    Directory of Open Access Journals (Sweden)

    N. B. Prajapati

    2010-03-01

    Full Text Available LA planning in cellular network is useful for minimizing location management cost in GSM network. Infact, size of LA can be optimized to create a balance between the LA update rate and expected pagingrate within LA. To get optimal result for LA planning in cellular network simulated annealing algorithmis used. Simulated annealing give optimal results in acceptable run-time.

  10. Remote sensing of atmospheric duct parameters using simulated annealing

    Institute of Scientific and Technical Information of China (English)

    Zhao Xiao-Feng; Huang Si-Xun; Xiang Jie; Shi Wei-Lai

    2011-01-01

    Simulated annealing is one of the robust optimization schemes. Simulated annealing mimics the annealing process of the slow cooling of a heated metal to reach a stable minimum energy state. In this paper,we adopt simulated annealing to study the problem of the remote sensing of atmospheric duct parameters for two different geometries of propagation measurement. One is from a single emitter to an array of radio receivers (vertical measurements),and the other is from the radar clutter returns (horizontal measurements). Basic principles of simulated annealing and its applications to refractivity estimation are introduced. The performance of this method is validated using numerical experiments and field measurements collected at the East China Sea. The retrieved results demonstrate the feasibility of simulated annealing for near real-time atmospheric refractivity estimation. For comparison,the retrievals of the genetic algorithm are also presented. The comparisons indicate that the convergence speed of simulated annealing is faster than that of the genetic algorithm,while the anti-noise ability of the genetic algorithm is better than that of simulated annealing.

  11. Thermal annealing of GaAs concentrator solar cells

    Science.gov (United States)

    Curtis, H. B.; Brinker, David J.

    1991-01-01

    Isochronal and isothermal annealing tests were performed on GaAs concentrator cells which were irradiated with electrons of various energies to fluences up to 1 x 10(exp 16) e/sq cm. The results include: (1) For cells irradiated with electrons from 0.7 to 2.3 MeV, recovery decreases with increasing electron energy. (2) As determined by the un-annealed fractions, isothermal and isochronal annealing produce the same recovery. Also, cells irradiated to 3 x 10(exp 15) or 1 x 10(exp 16) e/sq cm recover to similar un-annealed fractions. (3) Some significant annealing is being seen at 150 C although very long times are required.

  12. Annealing effect on InP vertical porous arrays

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    InP vertical porous arrays were produced using electrochemical etching at room temperature.The as-etched InP samples were annealed in an ultra high vacuum camber.Cross-sectional analysis of the porous layer was conducted using scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX).Annealing in vacuum was found to meliorate the structural quality of the porous layer.EDX results showed the composition change of the porous InP.By controlling the annealing process parameters,the content ratio of phosphorus (P) to indium (In) is tuneable.Raman property of the samples was also investigated at room temperature.Compared with the sample without annealing treatment,Raman spectrum from the annealed sample showed red-shifted LO and TO peaks together with sharpened LO peak and shortened TO peak.

  13. Annealing of ion-implanted GaN

    CERN Document Server

    Burchard, A; Stötzler, A; Weissenborn, R; Deicher, M

    1999-01-01

    $^{111m}$Cd and $^{112}$Cd ions have been implanted into GaN. With photoluminescence spectroscopy and perturbed $\\gamma-\\gamma$-angular correlation spectroscopy (PAC) the reduction of implantation damage and the optical activation of the implants have been observed as a function of annealing temperature using different annealing methods. The use of N$_{2}$ or NH$_{3}$ atmosphere during annealing allows temperatures up to 1323k and 1373 K, respectively, but above 1200 K a strong loss of Cd from the GaN has been observed. Annealing GaN together with elementary Al forms a protective layer on the GaN surface allowing annealing temperatures up to 1570 K for 10 min. (11 refs).

  14. Mechanism of Annealing Softening of Rolled or Forged Tool Steel

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    In order to reduce hardness of rolled or forged steels after annealing and improve processability, the diameter and dispersity of carbides were measured by SEM and quantitative metallography. The microstructure of annealed steel was analyzed by TEM. The effects of the factors such as solute atoms, carbides, grain boundary and interphase boundary were studied. The mechanism of annealing softening of steels was analyzed on the examples of steels H13, S5, S7, X45CrNiMo4, which are treated with new technology. The results showed that the softening of H13, S7, S5 is easier obtained by isothermal or slow cooling annealing from slightly below A1, but hardness of X45CrNiMo4 after annealing is reduced effectively by obtaining coarse lamellar pearlite. Economic results can be obtained from good processability.

  15. Crystallization degree change of expanded graphite by milling and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Tang Qunwei [Key Laboratory for Functional Materials of Fujian Higher Education, Institute of Material Physical Chemistry, Huaqiao University, Quanzhou 362021 (China); Wu Jihuai [Key Laboratory for Functional Materials of Fujian Higher Education, Institute of Material Physical Chemistry, Huaqiao University, Quanzhou 362021 (China)], E-mail: jhwu@hqu.edu.cn; Sun Hui; Fang Shijun [Key Laboratory for Functional Materials of Fujian Higher Education, Institute of Material Physical Chemistry, Huaqiao University, Quanzhou 362021 (China)

    2009-05-05

    Expanded graphite was ball milled with a planetary mill in air atmosphere, and subsequently thermal annealed. The samples were characterized by using X-ray diffraction spectroscopy (XRD), scanning electron microscopy (SEM) and thermal gravimetric analysis (TGA). It was found that in the milling initial stage (less than 12 h), the crystallization degree of the expanded graphite declined gradually, but after milling more than 16 h, a recrystallization of the expanded graphite toke place, and ordered nanoscale expanded graphite was formed gradually. In the annealing initial stage, the non-crystallization of the graphite occurred, but, beyond an annealing time, recrystallizations of the graphite arise. Higher annealing temperature supported the recrystallization. The milled and annealed expanded graphite still preserved the crystalline structure as raw material and hold high thermal stability.

  16. On the Debossing, Annealing and Mounting of Bells

    Science.gov (United States)

    PERRIN, R.; SWALLOWE, G. M.; CHARNLEY, T.; MARSHALL, C.

    1999-10-01

    Changes in the frequencies of the musical partials of various types of bells following debossing dismounting/mounting and annealing/quench annealing are reported. Debossing, dismounting and quench annealing lead to frequency drops, while mounting gives rises. Annealing can lead to frequency increases or decreases depending upon the maximum temperature employed and the initial residual stress. Qualitative explanations of these phenomena are given in terms of changes in crown stiffness, internal stress and alloy phase structure. These are supported by the results of X-ray diffraction measurements. Although the effects are all small they can be large enough to be detected by a reasonably musical car. This, together with the fact that the effects cannot be controlled, gives a plausible explanation of why modern bellfounders use vertical lathes for tuning, even with small carillon bells, and do not anneal bells when trying to control warble.

  17. Annealed Scaling for a Charged Polymer

    Energy Technology Data Exchange (ETDEWEB)

    Caravenna, F., E-mail: francesco.caravenna@unimib.it [Università degli Studi di Milano-Bicocca, Dipartimento di Matematica e Applicazioni (Italy); Hollander, F. den, E-mail: denholla@math.leidenuniv.nl [Leiden University, Mathematical Institute (Netherlands); Pétrélis, N., E-mail: nicolas.petrelis@univ-nantes.fr [Université de Nantes, Laboratoire de Mathématiques Jean Leray UMR 6629 (France); Poisat, J., E-mail: poisat@ceremade.dauphine.fr [Université Paris-Dauphine, PSL Research University, CEREMADE, UMR 7534 (France)

    2016-03-15

    This paper studies an undirected polymer chain living on the one-dimensional integer lattice and carrying i.i.d. random charges. Each self-intersection of the polymer chain contributes to the interaction Hamiltonian an energy that is equal to the product of the charges of the two monomers that meet. The joint probability distribution for the polymer chain and the charges is given by the Gibbs distribution associated with the interaction Hamiltonian. The focus is on the annealed free energy per monomer in the limit as the length of the polymer chain tends to infinity. We derive a spectral representation for the free energy and use this to prove that there is a critical curve in the parameter plane of charge bias versus inverse temperature separating a ballistic phase from a subballistic phase. We show that the phase transition is first order. We prove large deviation principles for the laws of the empirical speed and the empirical charge, and derive a spectral representation for the associated rate functions. Interestingly, in both phases both rate functions exhibit flat pieces, which correspond to an inhomogeneous strategy for the polymer to realise a large deviation. The large deviation principles in turn lead to laws of large numbers and central limit theorems. We identify the scaling behaviour of the critical curve for small and for large charge bias. In addition, we identify the scaling behaviour of the free energy for small charge bias and small inverse temperature. Both are linked to an associated Sturm-Liouville eigenvalue problem. A key tool in our analysis is the Ray-Knight formula for the local times of the one-dimensional simple random walk. This formula is exploited to derive a closed form expression for the generating function of the annealed partition function, and for several related quantities. This expression in turn serves as the starting point for the derivation of the spectral representation for the free energy, and for the scaling theorems

  18. Fabrication of onion-like carbon from nanodiamond by annealing

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    Onion-like carbon(OLC)was synthesized by annealing nanodiamond in low vacuum of 1 Pa and at annealing temperatures from 500℃to 1400℃.The high-resolution transmission electron microscope (HRTEM)images,X-ray diffraction(XRD)and Raman spectrum of the OLC showed that there was no OLC when the annealing temperature was lower than 900℃.Moreover,the fragment amorphous carbon existed on the surfaces of the nanodiamond particles.At the annealing temperature of 900℃,the OLC particles began appearing and the size of the OLC particles was smaller than 5 nm.When the annealing temperature was increased from 900℃to 1400℃,the nanodiamond was transformed into OLC gradu- ally.At the annealing temperature of 1400℃,all the nanodiamond particles were transformed into OLC completely.The OLC exhibited similarity to the original nanodiamond particles in shape.A mechanism for the OLC synthesis by annealing was provided.The graphitization started at the surfaces of the nanodiamond particles.The formation process of the OLC includes formation of graphite fragments, connection and curvature of graphite sheets between diamond(111)planes and closure of the graphite layers.

  19. Surface Morphology of Annealed Lead Phthalocyanine Thin Films

    Directory of Open Access Journals (Sweden)

    P.Kalugasalam,

    2010-06-01

    Full Text Available The thin films of Lead Phthalocyanine (PbPc on glass substrates were prepared by Vacuum deposition. The thickness of the films was 450 nm. The sample annealed in high vacuum at 373 K temperature. The sample has been analysed by X-ray diffraction, scanning electron microscopy and atomic force microscopy in order to get structural and surface morphology of the PbPc thin film. The formation of XRD patterns of PbPc shows a triclinic grains (T seen along with monoclinic (M forms of PbPc. The sample is annealed at 373 K temperatures; the film shows peaks that assigned to the triclinic phase. SEM and AFM are the best tools to investigate the surface smoothness and to find the grain size of the particles. The grain size is calculated for all films of different thicknesses. The annealed AFM micrograph shows that the surface of the films consists of large holes. The annealed AFM image indicates a smooth surface. It is very clear that the grain size decreases with increase in the annealing temperature. The roughness also decreases with the increase in film annealing temperature. Annealed film leads to the oxidation of the hthalocyanine with oxygen absorbed or diffused. Therefore, the heat is responsible for the increase in film thickness. Since the films expand, it is believed that the porosity is increased.

  20. The changes of ADI structure during high temperature annealing

    Directory of Open Access Journals (Sweden)

    A. Krzyńska

    2010-01-01

    Full Text Available The results of structure investigations of ADI during it was annealing at elevated temperature are presented. Ductile iron austempered at temperature 325oC was then isothermally annealed 360 minutes at temperature 400, 450, 500 and 550oC. The structure investigations showed that annealing at these temperatures caused substantial structure changes and thus essential hardness decrease, which is most useful property of ADI from point of view its practical application. Degradation advance of the structure depends mainly on annealing temperature, less on the time of the heat treatment. It was concluded that high temperature annealing caused precipitation of Fe3C type carbides, which morphology and distribution depend on temperature. In case of 400oC annealing the carbides precipitates inside bainitic ferrite lath in specific crystallographic planes and partly at the grain boundaries. The annealing at the temperature 550oC caused disappearing of characteristic for ADI needle or lath – like morphology, which is replaced with equiaxed grains. In this case Fe3C carbides take the form very fine precipitates with spheroidal geometry.

  1. Embrittlement recovery due to annealing of reactor pressure vessel steels

    Energy Technology Data Exchange (ETDEWEB)

    Eason, E.D.; Wright, J.E.; Nelson, E.E. [Modeling and Computing Services, Boulder, CO (United States); Odette, G.R.; Mader, E.V. [Univ. of California, Santa Barbara, CA (United States)

    1996-03-01

    Embrittlement of reactor pressure vessels (RPVs) can be reduced by thermal annealing at temperatures higher than the normal operating conditions. Although such an annealing process has not been applied to any commercial plants in the United States, one US Army reactor, the BR3 plant in Belgium, and several plants in eastern Europe have been successfully annealed. All available Charpy annealing data were collected and analyzed in this project to develop quantitative models for estimating the recovery in 30 ft-lb (41 J) Charpy transition temperature and Charpy upper shelf energy over a range of potential annealing conditions. Pattern recognition, transformation analysis, residual studies, and the current understanding of the mechanisms involved in the annealing process were used to guide the selection of the most sensitive variables and correlating parameters and to determine the optimal functional forms for fitting the data. The resulting models were fitted by nonlinear least squares. The use of advanced tools, the larger data base now available, and insight from surrogate hardness data produced improved models for quantitative evaluation of the effects of annealing. The quality of models fitted in this project was evaluated by considering both the Charpy annealing data used for fitting and the surrogate hardness data base. The standard errors of the resulting recovery models relative to calibration data are comparable to the uncertainty in unirradiated Charpy data. This work also demonstrates that microhardness recovery is a good surrogate for transition temperature shift recovery and that there is a high level of consistency between the observed annealing trends and fundamental models of embrittlement and recovery processes.

  2. Excimer laser annealing for low-voltage power MOSFET

    Science.gov (United States)

    Chen, Yi; Okada, Tatsuya; Noguchi, Takashi; Mazzamuto, Fulvio; Huet, Karim

    2016-08-01

    Excimer laser annealing of lumped beam was performed to form the P-base junction for high-performance low-voltage-power MOSFET. An equivalent shallow-junction structure for the P-base junction with a uniform impurity distribution is realized by adopting excimer laser annealing (ELA). The impurity distribution in the P-base junction can be controlled precisely by the irradiated pulse energy density and the number of shots of excimer laser. High impurity activation for the shallow junction has been confirmed in the melted phase. The application of the laser annealing technology in the fabrication process of a practical low-voltage trench gate MOSFET was also examined.

  3. Annealing properties of potato starches with different degrees of phosphorylation

    DEFF Research Database (Denmark)

    Muhrbeck, Per; Svensson, E

    1996-01-01

    Changes in the gelatinization temperature interval and gelatinization enthalpy with annealing time at 50 degrees C were followed for a number of potato starch samples, with different degrees of phosphorylation, using differential scanning calorimetry. The gelatinization temperature increased...... with the length of the annealing time up to the maximum time of 1280 min and a clear relation to the degree of phosphorylation was observed. The gelatinization enthalpy changed very slowly during the initial period of annealing, but faster in the later stages of the process. The increase in enthalpy was largest...

  4. The phase diagram of annealed Ge(111)/Ga

    DEFF Research Database (Denmark)

    Molinàs-Mata, P.; Böhringer, M.; Artacho, E.;

    1995-01-01

    A study of the annealed phases of Ge(111)/Ga for coverages above 0.05 ML is presented. The surfaces are investigated by low-energy electron diffraction, scanning tunneling microscopy, and partly by photoemission and surface X-ray diffraction using synchrotron radiation. For Ga coverages beyond 0.......05 ML and up to about 2 ML and annealing temperatures higher than 500 degrees C four different phases appear. They all can be characterized as being discommensurate. Surprisingly, no commensurate superstructure appears on annealed Ge(111)/Ga....

  5. A NEW GENETIC SIMULATED ANNEALING ALGORITHM FOR FLOOD ROUTING MODEL

    Institute of Scientific and Technical Information of China (English)

    KANG Ling; WANG Cheng; JIANG Tie-bing

    2004-01-01

    In this paper, a new approach, the Genetic Simulated Annealing (GSA), was proposed for optimizing the parameters in the Muskingum routing model. By integrating the simulated annealing method into the genetic algorithm, the hybrid method could avoid some troubles of traditional methods, such as arduous trial-and-error procedure, premature convergence in genetic algorithm and search blindness in simulated annealing. The principle and implementing procedure of this algorithm were described. Numerical experiments show that the GSA can adjust the optimization population, prevent premature convergence and seek the global optimal result.Applications to the Nanyunhe River and Qingjiang River show that the proposed approach is of higher forecast accuracy and practicability.

  6. In-Situ Measurements of Graphene Mechanics During Annealing

    Science.gov (United States)

    Hui, Aaron; de Alba, Roberto; Sebastian, Abhilash; Parpia, Jeevak

    Graphene shows great potential as a material for a new generation of mechanical nanodevices. However, current methodologies used for fabricating graphene structures involve polymer resists for transfer and patterning, which degrades mechanical performance. To improve surface quality, high current or high temperature annealing of graphene is commonly employed. Previous studies of graphene mechanics have focused on performance after annealing or temperature-dependent behavior from 4K-300K. Here we present real-time, in-situ measurements of graphene mechanical resonance during high temperature annealing from 300K-600K. Upon heating, reversible changes in mechanical frequency are indicative of graphene thermal contraction. Discontinuous and irreversible changes are also seen, corresponding to graphene slipping and mass desorption. Both reversible and irreversible changes in quality factor are also observed. Characterizing the effects of annealing on the structural properties of graphene will enable more precise engineering for particular applications, such as mass sensing.

  7. Microstructural characterization and impact toughness of intercritically annealed PM steels

    International Nuclear Information System (INIS)

    In this study, atomized iron powder (Ancorsteel 1000) was mixed with 0.3 and 0.5 wt.% graphite powder. After sintering at 1120 deg. C, coarse and fine ferrite and martensite (dual phase) microstructures were produced through intercritical annealing heat treatment at different temperatures. Specimens with various martensite volume fraction and size were impact tested. Impact toughness increased with increasing martensite volume fraction and decreasing martensite size. It was also seen that the impact toughness of specimens with 0.3 wt.% graphite was higher than those specimens with 0.5 wt.% graphite. Furthermore, the impact toughness of intercritically annealed specimens with fine ferrite and martensite microstructure was compared with a specimen that was conventionally quenched and tempered after sintering. The results showed that especially for high intercritical annealing temperatures, the impact toughness of intercritically annealed specimens was higher than that of conventionally heat-treated ones

  8. Solvent vapor annealing of an insoluble molecular semiconductor

    KAUST Repository

    Amassian, Aram

    2010-01-01

    Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film - pentacene on SiO 2 exposed to acetone vapor - using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material. © 2010 The Royal Society of Chemistry.

  9. Precise annealing of focal plane arrays for optical detection

    Energy Technology Data Exchange (ETDEWEB)

    Bender, Daniel A.

    2015-09-22

    Precise annealing of identified defective regions of a Focal Plane Array ("FPA") (e.g., exclusive of non-defective regions of the FPA) facilitates removal of defects from an FPA that has been hybridized and/or packaged with readout electronics. Radiation is optionally applied under operating conditions, such as under cryogenic temperatures, such that performance of an FPA can be evaluated before, during, and after annealing without requiring thermal cycling.

  10. Hardening by annealing and softening by deformation in nanostructured metals

    DEFF Research Database (Denmark)

    Huang, X.; Hansen, N.; Tsuji, N.

    2006-01-01

    We observe that a nanostructured metal can be hardened by annealing and softened when subsequently deformed, which is in contrast to the typical behavior of a metal. Microstructural investigation points to an effect of the structural scale on fundamental mechanisms of dislocation-dislocation and....... As a consequence, the strength decreases and the ductility increases. These observations suggest that for materials such as the nanostructured aluminum studied here, deformation should be used as an optimizing procedure instead of annealing....

  11. Optimization by Quantum Annealing: Lessons from hard 3-SAT cases

    OpenAIRE

    Battaglia, Demian; Santoro, Giuseppe; Tosatti, Erio

    2005-01-01

    The Path Integral Monte Carlo simulated Quantum Annealing algorithm is applied to the optimization of a large hard instance of the Random 3-SAT Problem (N=10000). The dynamical behavior of the quantum and the classical annealing are compared, showing important qualitative differences in the way of exploring the complex energy landscape of the combinatorial optimization problem. At variance with the results obtained for the Ising spin glass and for the Traveling Salesman Problem, in the presen...

  12. Stochastic search in structural optimization - Genetic algorithms and simulated annealing

    Science.gov (United States)

    Hajela, Prabhat

    1993-01-01

    An account is given of illustrative applications of genetic algorithms and simulated annealing methods in structural optimization. The advantages of such stochastic search methods over traditional mathematical programming strategies are emphasized; it is noted that these methods offer a significantly higher probability of locating the global optimum in a multimodal design space. Both genetic-search and simulated annealing can be effectively used in problems with a mix of continuous, discrete, and integer design variables.

  13. An improved simulated annealing algorithm for standard cell placement

    Science.gov (United States)

    Jones, Mark; Banerjee, Prithviraj

    1988-01-01

    Simulated annealing is a general purpose Monte Carlo optimization technique that was applied to the problem of placing standard logic cells in a VLSI ship so that the total interconnection wire length is minimized. An improved standard cell placement algorithm that takes advantage of the performance enhancements that appear to come from parallelizing the uniprocessor simulated annealing algorithm is presented. An outline of this algorithm is given.

  14. Nonsmooth trajectory optimization - An approach using continuous simulated annealing

    Science.gov (United States)

    Lu, Ping; Khan, M. A.

    1993-01-01

    An account is given of the properties of a continuous simulated annealing algorithm that can function as a global optimization tool for nonsmooth dynamic systems, as shown in the case of a trajectory-optimization program implementation. The approach is shown to successfully solve the problem of nonsmooth trajectory optimization for a high performance rigid-body aircraft. The results obtained demonstrate the superiority of the simulated annealing algorithm over widely used algorithms.

  15. Spall Response of Annealed Copper to Direct Explosive Loading

    Science.gov (United States)

    Finnegan, Simon; Burns, Malcolm; Whiteman, Glenn

    2015-06-01

    Taylor wave spall experiments were conducted on annealed copper targets using direct explosive loading. The targets were mounted on the back of an explosive which was initiated using a gas gun plate impact. The explosive and target were separated by a layer of foam in order to reduce the peak amplitude and strain rate of the Taylor wave pulse. This technique creates a high stress state, with a lower strain rate than an equivalent plate impact experiment, within the target. An advantage of using a gas gun is that the explosive run to detonation following impact can be studied separately. Four shots were performed on two differently annealed batches of copper to investigate the effect of annealing on the spall response. One pair of targets was annealed at 1123 K for 4 hours and the other pair was annealed at 723 K for 1 hour. The free surface velocity profiles were recorded using a heterodyne velocimetry (HetV) probe, focussed on the centre of the target. To quantify the effect of the annealing the pullback shapes in the free surface velocity profiles and the calculated spall strengths were compared for the four targets.

  16. Degeneracy, degree, and heavy tails in quantum annealing

    Science.gov (United States)

    King, Andrew D.; Hoskinson, Emile; Lanting, Trevor; Andriyash, Evgeny; Amin, Mohammad H.

    2016-05-01

    Both simulated quantum annealing and physical quantum annealing have shown the emergence of "heavy tails" in their performance as optimizers: The total time needed to solve a set of random input instances is dominated by a small number of very hard instances. Classical simulated annealing, in contrast, does not show such heavy tails. Here we explore the origin of these heavy tails, which appear for inputs with high local degeneracy—large isoenergetic clusters of states in Hamming space. This category includes the low-precision Chimera-structured problems studied in recent benchmarking work comparing the D-Wave Two quantum annealing processor with simulated annealing. On similar inputs designed to suppress local degeneracy, performance of a quantum annealing processor on hard instances improves by orders of magnitude at the 512-qubit scale, while classical performance remains relatively unchanged. Simulations indicate that perturbative crossings are the primary factor contributing to these heavy tails, while sensitivity to Hamiltonian misspecification error plays a less significant role in this particular setting.

  17. Quantum versus simulated annealing in wireless interference network optimization.

    Science.gov (United States)

    Wang, Chi; Chen, Huo; Jonckheere, Edmond

    2016-01-01

    Quantum annealing (QA) serves as a specialized optimizer that is able to solve many NP-hard problems and that is believed to have a theoretical advantage over simulated annealing (SA) via quantum tunneling. With the introduction of the D-Wave programmable quantum annealer, a considerable amount of effort has been devoted to detect and quantify quantum speedup. While the debate over speedup remains inconclusive as of now, instead of attempting to show general quantum advantage, here, we focus on a novel real-world application of D-Wave in wireless networking-more specifically, the scheduling of the activation of the air-links for maximum throughput subject to interference avoidance near network nodes. In addition, D-Wave implementation is made error insensitive by a novel Hamiltonian extra penalty weight adjustment that enlarges the gap and substantially reduces the occurrence of interference violations resulting from inevitable spin bias and coupling errors. The major result of this paper is that quantum annealing benefits more than simulated annealing from this gap expansion process, both in terms of ST99 speedup and network queue occupancy. It is the hope that this could become a real-word application niche where potential benefits of quantum annealing could be objectively assessed. PMID:27181056

  18. Quantum versus simulated annealing in wireless interference network optimization

    Science.gov (United States)

    Wang, Chi; Chen, Huo; Jonckheere, Edmond

    2016-05-01

    Quantum annealing (QA) serves as a specialized optimizer that is able to solve many NP-hard problems and that is believed to have a theoretical advantage over simulated annealing (SA) via quantum tunneling. With the introduction of the D-Wave programmable quantum annealer, a considerable amount of effort has been devoted to detect and quantify quantum speedup. While the debate over speedup remains inconclusive as of now, instead of attempting to show general quantum advantage, here, we focus on a novel real-world application of D-Wave in wireless networking—more specifically, the scheduling of the activation of the air-links for maximum throughput subject to interference avoidance near network nodes. In addition, D-Wave implementation is made error insensitive by a novel Hamiltonian extra penalty weight adjustment that enlarges the gap and substantially reduces the occurrence of interference violations resulting from inevitable spin bias and coupling errors. The major result of this paper is that quantum annealing benefits more than simulated annealing from this gap expansion process, both in terms of ST99 speedup and network queue occupancy. It is the hope that this could become a real-word application niche where potential benefits of quantum annealing could be objectively assessed.

  19. Annealing characteristics of irradiated hydrogenated amorphous silicon solar cells

    Science.gov (United States)

    Payson, J. S.; Abdulaziz, S.; Li, Y.; Woodyard, J. R.

    1991-01-01

    It was shown that 1 MeV proton irradiation with fluences of 1.25E14 and 1.25E15/sq cm reduces the normalized I(sub SC) of a-Si:H solar cell. Solar cells recently fabricated showed superior radiation tolerance compared with cells fabricated four years ago; the improvement is probably due to the fact that the new cells are thinner and fabricated from improved materials. Room temperature annealing was observed for the first time in both new and old cells. New cells anneal at a faster rate than old cells for the same fluence. From the annealing work it is apparent that there are at least two types of defects and/or annealing mechanisms. One cell had improved I-V characteristics following irradiation as compared to the virgin cell. The work shows that the photothermal deflection spectroscopy (PDS) and annealing measurements may be used to predict the qualitative behavior of a-Si:H solar cells. It was anticipated that the modeling work will quantitatively link thin film measurements with solar cell properties. Quantitative predictions of the operation of a-Si:H solar cells in a space environment will require a knowledge of the defect creation mechanisms, defect structures, role of defects on degradation, and defect passivation and annealing mechanisms. The engineering data and knowledge base for justifying space flight testing of a-Si:H alloy based solar cells is being developed.

  20. Quantum versus simulated annealing in wireless interference network optimization.

    Science.gov (United States)

    Wang, Chi; Chen, Huo; Jonckheere, Edmond

    2016-01-01

    Quantum annealing (QA) serves as a specialized optimizer that is able to solve many NP-hard problems and that is believed to have a theoretical advantage over simulated annealing (SA) via quantum tunneling. With the introduction of the D-Wave programmable quantum annealer, a considerable amount of effort has been devoted to detect and quantify quantum speedup. While the debate over speedup remains inconclusive as of now, instead of attempting to show general quantum advantage, here, we focus on a novel real-world application of D-Wave in wireless networking-more specifically, the scheduling of the activation of the air-links for maximum throughput subject to interference avoidance near network nodes. In addition, D-Wave implementation is made error insensitive by a novel Hamiltonian extra penalty weight adjustment that enlarges the gap and substantially reduces the occurrence of interference violations resulting from inevitable spin bias and coupling errors. The major result of this paper is that quantum annealing benefits more than simulated annealing from this gap expansion process, both in terms of ST99 speedup and network queue occupancy. It is the hope that this could become a real-word application niche where potential benefits of quantum annealing could be objectively assessed.

  1. An approach for reactor vessel life assessment following an anneal

    International Nuclear Information System (INIS)

    The integrity of the reactor pressure vessel is critical to continued operation of nuclear power plants. Long term exposure to high energy neutrons can cause irradiation embrittlement of the reactor pressure vessel steel. Irradiation embrittlement may be a life limiting factor for some nuclear power plants. Annealing is the only option for reversing the effects of irradiation embrittlement. The feasibility and generic benefits of the annealing process have been demonstrated through numerous industry studies. The consideration of annealing as part of a reactor vessel aging management program requires the ability to predict the annealing and re-irradiation response of pressure vessel steel. Data for these predictions can be obtained through proper planning and implementation during the current years of reactor vessel operation. A comprehensive materials test plan enables a utility to gain significant information relative to reactor vessel annealing in a timely manner. This paper discusses a materials test plan for an example nuclear plant. The planning process, the type of data generated, and an approach for transforming the data into meaningful predictions for the vessel re-irradiation response are all illustrated. The intent is to provide guidelines for gathering and interpreting the data that is used to predict the life of a typical reactor vessel following an anneal

  2. Thermal, quantum and simulated quantum annealing: analytical comparisons for simple models

    OpenAIRE

    Bapst, Victor; Semerjian, Guilhem

    2015-01-01

    We study various annealing dynamics, both classical and quantum, for simple mean-field models and explain how to describe their behavior in the thermodynamic limit in terms of differential equations. In particular we emphasize the differences between quantum annealing (i.e. evolution with Schr\\"odinger equation) and simulated quantum annealing (i.e. annealing of a Quantum Monte Carlo simulation).

  3. Rapid hardening induced by electric pulse annealing in nanostructured pure aluminum

    DEFF Research Database (Denmark)

    Zeng, Wei; Shen, Yao; Zhang, Ning;

    2012-01-01

    Nanostructured pure aluminum was fabricated by heavy cold-rolling and then subjected to recovery annealing either by applying electric pulse annealing or by traditional air furnace annealing. Both annealing treatments resulted in an increase in yield strength due to the occurrence of a “dislocation...

  4. As2S8 planar waveguide: refractive index changes following an annealing and irradiation and annealing cycle, and light propagation features

    Institute of Scientific and Technical Information of China (English)

    Zou Liner; Wang Gouri; Shen Yun; Chen Baoxue; Mamoru Iso

    2011-01-01

    The refractive index of as-evaporated amorphous semiconductor As2S8 film upon an annealing and saturation irradiation and annealing cycle is reversible.Upon successive treatment with annealing and non-saturation irradiation and further annealing,the refractive index of the as-evaporated amorphous semiconductor As2 S8 film reaches a maximum value and then its reversibility occurs upon annealing.The annealing of the amorphous semiconductor As2S8 films results in the stabilization of the structure through changes of the S-S bonds in the nearest environment,accompanied by a decrease of film thickness.The As2S8 planar waveguide after annealing (130 ℃)and saturation irradiation and annealing (130 ℃) shows a good propagation characteristic with ca.0.27 dB/cm low propagation loss of the 632.8 nm guided mode.

  5. An Overview of Approaches to Modernize Quantum Annealing Using Local Searches

    OpenAIRE

    Chancellor, Nicholas

    2016-01-01

    I describe how real quantum annealers may be used to perform local (in state space) searches around specified states, rather than the global searches traditionally implemented in the quantum annealing algorithm. The quantum annealing algorithm is an analogue of simulated annealing, a classical numerical technique which is now obsolete. Hence, I explore strategies to use an annealer in a way which takes advantage of modern classical optimization algorithms, and additionally should be less sens...

  6. Sintering out of intercrystalline creep voids during an intermediate annealing in creep exposure

    International Nuclear Information System (INIS)

    The possibility of creep void shrinkage by regenerative annealing due to diffusion or creep of the surrounding material is investigated. The results of creep tests with the austenitic steel X 8 CrNiMoNb 16 16 show that the regenerating effect depends on the annealing time, temperature and creep rate reached before annealing. At higher annealing temperatures and longer annealing time changes of microstructure lead to a decrease of ductility and of the remaining life. (orig.)

  7. Annealing behaviors of vacancy in varied neutron irradiated Czochralski silicon

    Institute of Scientific and Technical Information of China (English)

    CHEN Gui-feng; LI Yang-xian; LIU Li-li; NIU Ping-juan; NIU Sheng-li; CHEN Dong-feng

    2006-01-01

    The difference of annealing behaviors of vacancy-oxygen complex (VO) in varied dose neutron irradiated Czochralski silicon: (S1 5×1017 n/cm3 and S2 1.07×1019 n/cm3) were studied. The results show that the VO is one of the main defects formed in neutron irradiated Czochralski silicon (CZ-Si). In this defect,oxygen atom shares a vacancy,it is bonded to two silicon neighbors. Annealed at 200 ℃,divacancies are trapped by interstitial oxygen(Oi) to form V2O (840 cm-1). With the decrease of the 829 cm-1 (VO) three infrared absorption bands at 825 cm-1 (V2O2),834 cm-1 (V2O3) and 840 cm-1 (V2O) will rise after annealed at temperature range of 200-500 ℃. After annealed at 450-500 ℃ the main absorption bands in S1 sample are 834 cm-1,825 cm-1 and 889 cm-1 (VO2),in S2 is 825 cm-1. Annealing of A-center in varied neutron irradiated CZ-Si is suggested to consist of two processes. The first is due to trapping of VO by Oi in low dose neutron irradiated CZ-Si (S1) and the second is due to capture the wandering vacancy by VO,etc,in high dose neutron irradiated CZ-Si (S2),the VO2 plays an important role in the annealing of A-center. With the increase of the irradiation dose,the annealing behavior of A-center is changed.

  8. High efficient inverted polymer solar cells with different annealing treatment

    International Nuclear Information System (INIS)

    Inverted polymer solar cells (IPSCs) were fabricated with cesium carbonate (Cs2CO3) modified indium tin oxide (ITO) substrates as the electrode and molybdenum trioxide (MoO3) modified Al as the anode. The Cs2CO3 dissolved in 2-ethoxyethanol was spin-coated on ITO substrates, showing snowflake-like morphology characterized by the scanning electron microscope (SEM). The absorption, X-ray diffraction as well as the morphology of the active layer were measured before and after annealing treatment. The IPSCs with annealing treatments on the active layers and MoO3 layers exhibited the maximum power conversion efficiency (PCE) approaching to 2%, with open circuit voltage (Voc) of 0.57 V, short circuit current density (Jsc) of 8.8 mA/cm2 and fill factor (FF) of 38.7%. The performance of IPSCs was dramatically decreased by annealing treatment after the deposition of Al cathode, which may be due to the diffusion of Al atom crossing the MoO3 layer forming new channels for charge carrier collection. However, the new channels are not beneficial to the charge carrier collection, which is demonstrated from that the Jsc of IPSCs was evidently decreased from 8.8 to 4.6 mA/cm2 by annealing treatment after deposition Al layer. The annealing treatment after deposition of MoO3 could improve the interfacial contact to aid in electron extraction. Highlights: ► PCE of inverted polymer solar cells (IPSc) with Cs2Co3 modified ITO as cathode and MoO3/Al as anode is approaching to 2%. ► The snowflake-like morphology of Cs2CO3 was investigated by SEM. ► The annealing treatment before deposition Al layer has positive effect on improvement of IPSCs performance. ► EDX results directly demonstrate the vertical phase separation of P3HT:PCBM induced by annealing treatment.

  9. Laser annealing of silicon surface defects for photovoltaic applications

    Science.gov (United States)

    Sun, Zeming; Gupta, Mool C.

    2016-10-01

    High power lasers are increasingly used for low cost fabrication of solar cell devices. High power laser processes generate crystal defects, which lower the cell efficiency. This study examines the effect of low power laser annealing for the removal of high power laser induced surface defects. The laser annealing behavior is demonstrated by the significant decrease of photoluminescence generated from dislocation-induced defects and the increase of band-to-band emission. This annealing effect is further confirmed by the X-ray diffraction peak reversal. The dislocation density is quantified by observing etch pits under the scanning electron microscope (SEM). For as-melted samples, the dislocation density is decreased to as low as 1.01 × 106 cm- 2 after laser annealing, resulting in an excellent surface carrier lifetime of 920 μs that is comparable to the value of 1240 μs for the silicon starting wafer. For severely defective samples, the dislocation density is decreased by 4 times and the surface carrier lifetime is increased by 5 times after laser annealing.

  10. Experimental quantum annealing: case study involving the graph isomorphism problem

    Science.gov (United States)

    Zick, Kenneth M.; Shehab, Omar; French, Matthew

    2015-06-01

    Quantum annealing is a proposed combinatorial optimization technique meant to exploit quantum mechanical effects such as tunneling and entanglement. Real-world quantum annealing-based solvers require a combination of annealing and classical pre- and post-processing; at this early stage, little is known about how to partition and optimize the processing. This article presents an experimental case study of quantum annealing and some of the factors involved in real-world solvers, using a 504-qubit D-Wave Two machine and the graph isomorphism problem. To illustrate the role of classical pre-processing, a compact Hamiltonian is presented that enables a reduced Ising model for each problem instance. On random N-vertex graphs, the median number of variables is reduced from N2 to fewer than N log2 N and solvable graph sizes increase from N = 5 to N = 13. Additionally, error correction via classical post-processing majority voting is evaluated. While the solution times are not competitive with classical approaches to graph isomorphism, the enhanced solver ultimately classified correctly every problem that was mapped to the processor and demonstrated clear advantages over the baseline approach. The results shed some light on the nature of real-world quantum annealing and the associated hybrid classical-quantum solvers.

  11. On simulated annealing phase transitions in phylogeny reconstruction.

    Science.gov (United States)

    Strobl, Maximilian A R; Barker, Daniel

    2016-08-01

    Phylogeny reconstruction with global criteria is NP-complete or NP-hard, hence in general requires a heuristic search. We investigate the powerful, physically inspired, general-purpose heuristic simulated annealing, applied to phylogeny reconstruction. Simulated annealing mimics the physical process of annealing, where a liquid is gently cooled to form a crystal. During the search, periods of elevated specific heat occur, analogous to physical phase transitions. These simulated annealing phase transitions play a crucial role in the outcome of the search. Nevertheless, they have received comparably little attention, for phylogeny or other optimisation problems. We analyse simulated annealing phase transitions during searches for the optimal phylogenetic tree for 34 real-world multiple alignments. In the same way in which melting temperatures differ between materials, we observe distinct specific heat profiles for each input file. We propose this reflects differences in the search landscape and can serve as a measure for problem difficulty and for suitability of the algorithm's parameters. We discuss application in algorithmic optimisation and as a diagnostic to assess parameterisation before computationally costly, large phylogeny reconstructions are launched. Whilst the focus here lies on phylogeny reconstruction under maximum parsimony, it is plausible that our results are more widely applicable to optimisation procedures in science and industry. PMID:27150349

  12. High pressure annealing of Europium implanted GaN

    KAUST Repository

    Lorenz, K.

    2012-02-09

    GaN epilayers were implanted with Eu to fluences of 1×10^13 Eu/cm2 and 1×10^15 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  13. On simulated annealing phase transitions in phylogeny reconstruction.

    Science.gov (United States)

    Strobl, Maximilian A R; Barker, Daniel

    2016-08-01

    Phylogeny reconstruction with global criteria is NP-complete or NP-hard, hence in general requires a heuristic search. We investigate the powerful, physically inspired, general-purpose heuristic simulated annealing, applied to phylogeny reconstruction. Simulated annealing mimics the physical process of annealing, where a liquid is gently cooled to form a crystal. During the search, periods of elevated specific heat occur, analogous to physical phase transitions. These simulated annealing phase transitions play a crucial role in the outcome of the search. Nevertheless, they have received comparably little attention, for phylogeny or other optimisation problems. We analyse simulated annealing phase transitions during searches for the optimal phylogenetic tree for 34 real-world multiple alignments. In the same way in which melting temperatures differ between materials, we observe distinct specific heat profiles for each input file. We propose this reflects differences in the search landscape and can serve as a measure for problem difficulty and for suitability of the algorithm's parameters. We discuss application in algorithmic optimisation and as a diagnostic to assess parameterisation before computationally costly, large phylogeny reconstructions are launched. Whilst the focus here lies on phylogeny reconstruction under maximum parsimony, it is plausible that our results are more widely applicable to optimisation procedures in science and industry.

  14. Molecular dynamics simulation of annealed ZnO surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Min, Tjun Kit; Yoon, Tiem Leong [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Lim, Thong Leng [Faculty of Engineering and Technology, Multimedia University, Melaka Campus, 75450 Melaka (Malaysia)

    2015-04-24

    The effect of thermally annealing a slab of wurtzite ZnO, terminated by two surfaces, (0001) (which is oxygen-terminated) and (0001{sup ¯}) (which is Zn-terminated), is investigated via molecular dynamics simulation by using reactive force field (ReaxFF). We found that upon heating beyond a threshold temperature of ∼700 K, surface oxygen atoms begin to sublimate from the (0001) surface. The ratio of oxygen leaving the surface at a given temperature increases as the heating temperature increases. A range of phenomena occurring at the atomic level on the (0001) surface has also been explored, such as formation of oxygen dimers on the surface and evolution of partial charge distribution in the slab during the annealing process. It was found that the partial charge distribution as a function of the depth from the surface undergoes a qualitative change when the annealing temperature is above the threshold temperature.

  15. Phosphorus diffusion in germanium following implantation and excimer laser annealing

    Science.gov (United States)

    Wang, Chen; Li, Cheng; Huang, Shihao; Lu, Weifang; Yan, Guangming; Zhang, Maotian; Wu, Huanda; Lin, Guangyang; Wei, Jiangbin; Huang, Wei; Lai, Hongkai; Chen, Songyan

    2014-05-01

    We focus our study on phosphorus diffusion in ion-implanted germanium after excimer laser annealing (ELA). An analytical model of laser annealing process is developed to predict the temperature profile and the melted depth in Ge. Based on the heat calculation of ELA, a phosphorus diffusion model has been proposed to predict the dopant profiles in Ge after ELA and fit SIMS profiles perfectly. A comparison between the current-voltage characteristics of Ge n+/p junctions formed by ELA at 250 mJ/cm2 and rapid thermal annealing at 650 °C for 15 s has been made, suggesting that ELA is promising for high performance Ge n+/p junctions.

  16. Solving the Optimal Trading Trajectory Problem Using a Quantum Annealer

    Science.gov (United States)

    Rosenberg, Gili; Haghnegahdar, Poya; Goddard, Phil; Carr, Peter; Wu, Kesheng; de Prado, Marcos Lopez

    2016-09-01

    We solve a multi-period portfolio optimization problem using D-Wave Systems' quantum annealer. We derive a formulation of the problem, discuss several possible integer encoding schemes, and present numerical examples that show high success rates. The formulation incorporates transaction costs (including permanent and temporary market impact), and, significantly, the solution does not require the inversion of a covariance matrix. The discrete multi-period portfolio optimization problem we solve is significantly harder than the continuous variable problem. We present insight into how results may be improved using suitable software enhancements, and why current quantum annealing technology limits the size of problem that can be successfully solved today. The formulation presented is specifically designed to be scalable, with the expectation that as quantum annealing technology improves, larger problems will be solvable using the same techniques.

  17. Reduction of Annealing Times for Energy Conservation in Aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Anthony D. Rollett; Hasso Weiland; Mohammed Alvi; Abhijit Brahme

    2005-08-31

    Carnegie Mellon University was teamed with the Alcoa Technical Center with support from the US Dept. of Energy (Office of Industrial Technology) and the Pennsylvania Technology Investment Authority (PTIA) to make processing of aluminum less costly and more energy efficient. Researchers in the Department of Materials Science and Engineering have investigated how annealing processes in the early stages of aluminum processing affect the structure and properties of the material. Annealing at high temperatures consumes significant amounts of time and energy. By making detailed measurements of the crystallography and morphology of internal structural changes they have generated new information that will provide a scientific basis for shortening processing times and consuming less energy during annealing.

  18. SIMULATED ANNEALING BASED POLYNOMIAL TIME QOS ROUTING ALGORITHM FOR MANETS

    Institute of Scientific and Technical Information of China (English)

    Liu Lianggui; Feng Guangzeng

    2006-01-01

    Multi-constrained Quality-of-Service (QoS) routing is a big challenge for Mobile Ad hoc Networks (MANETs) where the topology may change constantly. In this paper a novel QoS Routing Algorithm based on Simulated Annealing (SA_RA) is proposed. This algorithm first uses an energy function to translate multiple QoS weights into a single mixed metric and then seeks to find a feasible path by simulated annealing. The paper outlines simulated annealing algorithm and analyzes the problems met when we apply it to Qos Routing (QoSR) in MANETs. Theoretical analysis and experiment results demonstrate that the proposed method is an effective approximation algorithms showing better performance than the other pertinent algorithm in seeking the (approximate) optimal configuration within a period of polynomial time.

  19. Thermally induced native defect transform in annealed GaSb

    Science.gov (United States)

    Jie, Su; Tong, Liu; Jing-Ming, Liu; Jun, Yang; Yong-Biao, Bai; Gui-Ying, Shen; Zhi-Yuan, Dong; Fang-Fang, Wang; You-Wen, Zhao

    2016-07-01

    Undoped p-type GaSb single crystals were annealed at 550-600 °C for 100 h in ambient antimony. The annealed GaSb samples were investigated by Hall effect measurement, glow discharge mass spectroscopy (GDMS), infrared (IR) optical transmission and photoluminescence (PL) spectroscopy. Compared with the as-grown GaSb single crystal, the annealed GaSb samples have lower hole concentrations and weak native acceptor related PL peaks, indicating the reduction of the concentration of gallium antisite related native acceptor defects. Consequently, the below gap infrared transmission of the GaSb samples is enhanced after the thermal treatment. The mechanism about the reduction of the native defect concentration and its influence on the material property were discussed. Project supported by the National Natural Science Foundation of China (Grant Nos. 61474104 and 61504131).

  20. Solving Set Cover with Pairs Problem using Quantum Annealing

    Science.gov (United States)

    Cao, Yudong; Jiang, Shuxian; Perouli, Debbie; Kais, Sabre

    2016-09-01

    Here we consider using quantum annealing to solve Set Cover with Pairs (SCP), an NP-hard combinatorial optimization problem that plays an important role in networking, computational biology, and biochemistry. We show an explicit construction of Ising Hamiltonians whose ground states encode the solution of SCP instances. We numerically simulate the time-dependent Schrödinger equation in order to test the performance of quantum annealing for random instances and compare with that of simulated annealing. We also discuss explicit embedding strategies for realizing our Hamiltonian construction on the D-wave type restricted Ising Hamiltonian based on Chimera graphs. Our embedding on the Chimera graph preserves the structure of the original SCP instance and in particular, the embedding for general complete bipartite graphs and logical disjunctions may be of broader use than that the specific problem we deal with.

  1. NRC assessment of the Department of Energy annealing demonstration project

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, D.A.; Malik, S.N. [Nuclear Regulatory Commission, Washington, DC (United States)

    1997-02-01

    Thermal annealing is the only known method for mitigating the effects of neutron irradiation embrittlement in reactor pressure vessel (RPV) steels. In May 1996, the US Department of Energy (DOE) in conjunction with the American Society of Mechanical Engineers, Westinghouse, Cooperheat, Electric Power Research Institute (with participating utilities), Westinghouse Owner`s Group, Consumers Power, Electricite` de France, Duquesne Light and the Central Research Institute of the Electric Power Industry (Japan) sponsored an annealing demonstration project (ADP) at Marble Hill. The Marble Hill Plant, located in Madison, Indiana, is a Westinghouse 4 loop design. The plant was nearly 70% completed when the project was canceled. Hence, the RPV was never irradiated. The paper will present highlights from the NRCs independent evaluation of the Marble Hill Annealing Demonstration Project.

  2. Coordination Hydrothermal Interconnection Java-Bali Using Simulated Annealing

    Science.gov (United States)

    Wicaksono, B.; Abdullah, A. G.; Saputra, W. S.

    2016-04-01

    Hydrothermal power plant coordination aims to minimize the total cost of operating system that is represented by fuel costand constraints during optimization. To perform the optimization, there are several methods that can be used. Simulated Annealing (SA) is a method that can be used to solve the optimization problems. This method was inspired by annealing or cooling process in the manufacture of materials composed of crystals. The basic principle of hydrothermal power plant coordination includes the use of hydro power plants to support basic load while thermal power plants were used to support the remaining load. This study used two hydro power plant units and six thermal power plant units with 25 buses by calculating transmission losses and considering power limits in each power plant unit aided by MATLAB software during the process. Hydrothermal power plant coordination using simulated annealing plants showed that a total cost of generation for 24 hours is 13,288,508.01.

  3. Effect of Annealing on Rare Earth Based Hydrogen Storage Alloys

    Institute of Scientific and Technical Information of China (English)

    Li Jinhua

    2004-01-01

    Rare earth-based hydrogen storage alloy used as negative electrode materials for nickel-metal hydride (Ni-MH) batteries are used commercially.The effect of annealing treatment with different annealing temperature and time on the MLNi3.68 Co0.78 Mn0.35 Al0.27 and MMNi3.55 Co0.75 Mn0.40 Al0.30 alloys were investigated.The crystal microstructure,pressure-composition-isotherms (p-C-T) and electrochemical properties of alloys were examined by X-ray diffraction (XRD), automatic PCI monitoring system and electrical performance testing instruments.The optimum annealing treatment conditions of two kinds of alloys were determined.

  4. Temperature distribution in graphite during annealing in air cooled reactors

    International Nuclear Information System (INIS)

    A model for the evaluation temperature distributions in graphite during annealing operation in graphite. Moderated an-cooled reactors, is presented. One single channel and one dimension for air and graphite were considered. A numerical method based on finite control volumes was used for partioning the mathematical equations. The problem solution involves the use of unsteady equations of mass, momentum and energy conservation for air, and energy conservation for graphite. The source term was considered as stored energy release during annealing for describing energy conservation in the graphite. The coupling of energy conservation equations in air and graphite is performed by the heat transfer term betwen air and graphite. The results agree with experimental data. A sensitivity analysis shown that the termal conductivity of graphite and the maximum inlet channel temperature have great effect on the maximum temperature reached in graphite during the annealing. (author)

  5. A Personified Annealing Algorithm for Circles Packing Problem

    Institute of Scientific and Technical Information of China (English)

    ZHANGDe-Fu; LIXin

    2005-01-01

    Circles packing problem is an NP-hard problem and is difficult to solve. In this paper, a hybrid search strategy for circles packing problem is discussed. A way of generating new configuration is presented by simulating the moving of elastic objects, which can avoid the blindness of simulated annealing search and make iteration process converge fast. Inspired by the life experiences of people,an effective personified strategy to jump out of local minima is given. Based on the simulated annealing idea and personification strategy, an effective personified annealing algorithm for circles packing problem is developed. Numerical experiments on benchmark problem instances show that the proposed algorithm outperforms the best algorithm in the literature.

  6. Rapid Thermal annealing of silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 12000C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author)

  7. Enhancement of GMI Effect in Silicon Steels by Furnace Annealing

    Institute of Scientific and Technical Information of China (English)

    C.Sirisathitkul; P. Jantaratana

    2009-01-01

    The ratio and sensitivity of giant magnetoimpedance (GMI) in grain oriented silicon steels (Fe-4.5%Si) are improved after furnace annealing in air for 20 min. By annealing at 800℃, the GMI sensitivity rises from 1.29%/Oe to 1.91%/Oe and the ratio increases from 237% to 294% with decreasing characteristic frequency. The results are attributable to an increase in the transverse magnetic permeability during the heat treatment. From simulation by finite element method, the GMI effect can be interpreted as the modification of the current distribution by the applied magnetic field via the transverse permeability. In the case of annealed samples, the larger transverse permeability allows a higher GMI ratio and sensitivity.

  8. Microstructural evolution of aluminum alloy 3003 during annealing

    Institute of Scientific and Technical Information of China (English)

    WU Wen-xiang; ZHANG Xin-ming; SUN De-qin; HU Guo-qiang; LIU Guo-jin

    2006-01-01

    The microstructural evolution of cold-rolled aluminum alloy 3003 during annealing was investigated by means of micro-hardness measurement, electrical resistivity measurement, optical microscopy and transmission electron microscopy. The interaction of recrystallization and precipitation of aluminum alloy 3003 was also discussed. The results show that the recrystallized grain size of cold-rolled aluminum alloy 3003 is strongly affected by precipitation during annealing. When precipitation occurs prior to recrystallization at low temperature(300 ℃), the grain structure becomes coarse, and the precipitation process is affected by the presence of lattice defects, i.e. high cold reduction results in a large number of precipitates. When annealing at 500 ℃, however, for the recrystallization is prior to precipitation, the precipitation is independent of cold deformation reduction and a fine, equiaxed grain structure is obtained.

  9. Five-fold twin formation during annealing of nanocrystalline Cu

    Energy Technology Data Exchange (ETDEWEB)

    Bringa, E M; Farkas, D; Caro, A; Wang, Y M; McNaney, J; Smith, R

    2009-05-20

    Contrary to the common belief that many-fold twins, or star twins, in nanophase materials are due to the action of significant external stresses, we report molecular dynamics simulations of annealing in 5 nm grain size samples annealed at 800 K for nearly 0.5 nsec at 0 external pressure showing the formation of five-fold star twins during annealing under the action of the large internal stresses responsible for grain growth and microstructural evolution. The structure of the many-fold twins is remarkably similar to those we have found to occur under uniaxial shock loading, of samples of nanocrystalline NiW with a grain size of {approx}5-30 nm. The mechanism of formation of the many-fold twins is discussed in the light of the simulations and experiments.

  10. Sub-critical annealing of cold worked steel

    International Nuclear Information System (INIS)

    The kinetics of annealing of eutectoid steel which was cold rolled 75% and annealed at each of 400, 500 and 6000C have been followed with measurements of microhardness, X-ray textures and line broadening, scanning and transmission electron microscopy and positron annihilation. The controlling process appears to be the diffusion of Fe along Fe3C- αFe interfaces. The polygonization of ferrite, the formation of recrystallized ferrite grains and the spheroidization of Fe3C all were observed. Major changes in positron and X-ray line breadth parameters within the first 10 to 100 seconds indicate very rapid initial recovery but it is not clear if subsequent changes in those two parameters are solely due to recrystallization or to overlapping recovery and recrystallization processes. Although some degree of spheroidization was involved in all of our anneals, the positron and X-ray line broadening were selective in that they see only changes in the ferrite

  11. Toward understanding dynamic annealing processes in irradiated ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Myers, Michael Thomas [Texas A & M Univ., College Station, TX (United States)

    2013-05-01

    High energy particle irradiation inevitably generates defects in solids. The ballistic formation and thermalization of the defect creation process occur rapidly, and are believed to be reasonably well understood. However, knowledge of the evolution of defects after damage cascade thermalization, referred to as dynamic annealing, is quite limited. Unraveling the mechanisms associated with dynamic annealing is crucial since such processes play an important role in the formation of stable postirradiation disorder in ion-beam-processing of semiconductors, and determines the “radiation tolerance” of many nuclear materials. The purpose of this dissertation is to further our understanding of the processes involved in dynamic annealing. In order to achieve this, two main tasks are undertaken.

  12. Microstructural characterization of intercritically annealed low alloy PM steels

    Energy Technology Data Exchange (ETDEWEB)

    Gueral, A. [Materials Division, Technical Education Faculty, Metallurgy Education Department, Gazi University, 06500 Teknikokullar-Ankara (Turkey); Tekeli, S. [Materials Division, Technical Education Faculty, Metallurgy Education Department, Gazi University, 06500 Teknikokullar-Ankara (Turkey)]. E-mail: stekeli@gazi.edu.tr

    2007-07-01

    In this study, the applicability of intercritical annealing heat treatment, which is usually practiced to high strength low alloy ingot steels (HSLA), to low alloy powder metallurgy (PM) processed steels was investigated. With this heat treatment, it was intended to produce a dual-phase steel structure (ferrite + martensite) in PM steel. The effect of various amount of graphite addition on microstructure was also examined. For these purposes, atomized iron powder (Ancorsteel 1000) was mixed with 0.3 and 0.5 wt% graphite powder. The mixed powders were cold pressed at 700 MPa with single action and sintered at 1120 deg. C for 30 min under pure argon gas atmosphere. Some of the sintered specimens were directly annealed at intercritical heat treatment temperatures of 724, 735 and 760 deg. C and rapidly water quenched. Through these heat treatments, ferrite + martensite microstructure with coarse grain size were produced. The other sintered specimens were first austenitized at 890 deg. C for 12 min before intercritically annealing and then rapidly water quenched to produce fully martensitic structure. These specimens with fully martensitic microstructure were subsequently annealed at intercritical annealing temperatures of 724, 735 and 760 deg. C and rapidly water quenched. Ferrite + martensite microstructure with fine grain size was obtained by this route. The experimental results showed that martensite volume fraction increased with increasing intercritical annealing temperature as well as increasing graphite content. It is thought that mechanical properties of PM steels can be controlled by these heat treatments which are an alternative to traditional heat treatments of quenching + tempering applied usually to PM steels.

  13. Electron trap annealing in neutron transmutation doped silicon

    DEFF Research Database (Denmark)

    Guldberg, J.

    1977-01-01

    Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these...... annealed in the manner characteristic of intrinsic defects studied by EPR and ir spectroscopy. Two may be related to residual oxygen and carbon complexes. Applied Physics Letters is copyrighted by The American Institute of Physics....

  14. Adiabatic quantum computation and quantum annealing theory and practice

    CERN Document Server

    McGeoch, Catherine C

    2014-01-01

    Adiabatic quantum computation (AQC) is an alternative to the better-known gate model of quantum computation. The two models are polynomially equivalent, but otherwise quite dissimilar: one property that distinguishes AQC from the gate model is its analog nature. Quantum annealing (QA) describes a type of heuristic search algorithm that can be implemented to run in the ``native instruction set'''' of an AQC platform. D-Wave Systems Inc. manufactures {quantum annealing processor chips} that exploit quantum properties to realize QA computations in hardware. The chips form the centerpiece of a nov

  15. Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits—A comparative study

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A. J.

    2010-01-01

    and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self......-annealing kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted......Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver...

  16. Investigation of a pulsed current annealing method in reusing MOSFET dosimeters for in vivo IMRT dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Luo, Guang-Wen; Qi, Zhen-Yu, E-mail: qizhy@sysucc.org.cn; Deng, Xiao-Wu [Department of Radiation Oncology, Sun Yat-Sen University Cancer Center and State Key Laboratory of Oncology in Southern China, Collaborative Innovation Center of Cancer Medicine, Guangzhou 510060 (China); Rosenfeld, Anatoly [Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2522 (Australia)

    2014-05-15

    Purpose: To explore the feasibility of pulsed current annealing in reusing metal oxide semiconductor field-effect transistor (MOSFET) dosimeters forin vivo intensity modulated radiation therapy (IMRT) dosimetry. Methods: Several MOSFETs were irradiated atd{sub max} using a 6 MV x-ray beam with 5 V on the gate and annealed with zero bias at room temperature. The percentage recovery of threshold voltage shift during multiple irradiation-annealing cycles was evaluated. Key dosimetry characteristics of the annealed MOSFET such as the dosimeter's sensitivity, reproducibility, dose linearity, and linearity of response within the dynamic range were investigated. The initial results of using the annealed MOSFETs for IMRT dosimetry practice were also presented. Results: More than 95% of threshold voltage shift can be recovered after 24-pulse current continuous annealing in 16 min. The mean sensitivity degradation was found to be 1.28%, ranging from 1.17% to 1.52%, during multiple annealing procedures. Other important characteristics of the annealed MOSFET remained nearly consistent before and after annealing. Our results showed there was no statistically significant difference between the annealed MOSFETs and their control samples in absolute dose measurements for IMRT QA (p = 0.99). The MOSFET measurements agreed with the ion chamber results on an average of 0.16% ± 0.64%. Conclusions: Pulsed current annealing provides a practical option for reusing MOSFETs to extend their operational lifetime. The current annealing circuit can be integrated into the reader, making the annealing procedure fully automatic.

  17. Analysis of Trivium by a Simulated Annealing variant

    DEFF Research Database (Denmark)

    Borghoff, Julia; Knudsen, Lars Ramkilde; Matusiewicz, Krystian

    2010-01-01

    . A characteristic of equation systems that may be efficiently solvable by the means of such algorithms is provided. As an example, we investigate equation systems induced by the problem of recovering the internal state of the stream cipher Trivium. We propose an improved variant of the simulated annealing method...

  18. Self-Organization and Annealed Disorder in a Fracturing Process

    DEFF Research Database (Denmark)

    Caldarelli, Guido; Di Tolla, Francesco; Petri, Alberto

    1996-01-01

    We show that a vectorial model for inhomogeneous elastic media self-organizes under external stress. An onset of crack avalanches of every duration and length scale compatible with the lattice size is observed. The behavior is driven by the introduction of annealed disorder, i.e., by lowering the...

  19. Annealing Twinning and the Nucleation of Recrystallization at Grain Boundaries

    DEFF Research Database (Denmark)

    Jones, A R.

    1981-01-01

    Experimental evidence is presented which shows that, in three different low stacking fault energy materials, annealing twins form at grain boundaries during the very early stages of recovery following deformation. These observations provide the basis for the suggestion that twinning at grain...

  20. Function minimization with partially correct data via simulated annealing

    Science.gov (United States)

    Lorre, Jean J.

    1988-01-01

    The simulated annealing technique has been applied successfully to the problem of estimating the coefficients of a function in cases where only a portion of the data being fitted to the function is truly representative of the function, the rest being erroneous. Two examples are given, one in photometric function fitting and the other in pattern recognition. A schematic of the algorithm is provided.

  1. A Deterministic Annealing Approach to Clustering AIRS Data

    Science.gov (United States)

    Guillaume, Alexandre; Braverman, Amy; Ruzmaikin, Alexander

    2012-01-01

    We will examine the validity of means and standard deviations as a basis for climate data products. We will explore the conditions under which these two simple statistics are inadequate summaries of the underlying empirical probability distributions by contrasting them with a nonparametric, method called Deterministic Annealing technique

  2. Physical Mapping Using Simulated Annealing and Evolutionary Algorithms

    DEFF Research Database (Denmark)

    Vesterstrøm, Jacob Svaneborg

    2003-01-01

    Physical mapping (PM) is a method of bioinformatics that assists in DNA sequencing. The goal is to determine the order of a collection of fragments taken from a DNA strand, given knowledge of certain unique DNA markers contained in the fragments. Simulated annealing (SA) is the most widely used...

  3. A Simulated Annealing Methodology for Clusterwise Linear Regression.

    Science.gov (United States)

    DeSarbo, Wayne S.; And Others

    1989-01-01

    A method is presented that simultaneously estimates cluster membership and corresponding regression functions for a sample of observations or subjects. This methodology is presented with the simulated annealing-based algorithm. A set of Monte Carlo analyses is included to demonstrate the performance of the algorithm. (SLD)

  4. Application of Simulated Annealing to Clustering Tuples in Databases.

    Science.gov (United States)

    Bell, D. A.; And Others

    1990-01-01

    Investigates the value of applying principles derived from simulated annealing to clustering tuples in database design, and compares this technique with a graph-collapsing clustering method. It is concluded that, while the new method does give superior results, the expense involved in algorithm run time is prohibitive. (24 references) (CLB)

  5. Deep level defects in high temperature annealed InP

    Institute of Scientific and Technical Information of China (English)

    DONG; Zhiyuan; ZHAO; Youwen; ZENG; Yiping; DUAN; Manlong

    2004-01-01

    Deep level defects in high temperature annealed semi-conducting InP have been studied by deep level transient spectroscopy (DLTS). There is obvious difference in the deep defects between as-grown InP, InP annealed in phosphorus ambient and iron phosphide ambient, as far as their quantity and concentration are concerned. Only two defects at 0.24 and 0.64 eV can be detected in InP annealed iniron phosphide ambient,while defects at 0.24, 0.42, 0.54 and 0.64 eV have been detected in InP annealed in phosphorus ambient, in contrast to two defects at 0.49 and 0.64 eV or one defect at 0.13eV in as-grown InP. A defect suppression phenomenon related to iron diffusion process has been observed. The formation mechanism and the nature of the defects have been discussed.

  6. The afforestation problem: a heuristic method based on simulated annealing

    DEFF Research Database (Denmark)

    Vidal, Rene Victor Valqui

    1992-01-01

    This paper presents the afforestation problem, that is the location and design of new forest compartments to be planted in a given area. This optimization problem is solved by a two-step heuristic method based on simulated annealing. Tests and experiences with this method are also presented....

  7. Blue thermoluminescence emission of annealed lithium rich aluminosilicates

    Energy Technology Data Exchange (ETDEWEB)

    Correcher, V.; Rodriguez-Lazcano, Y., E-mail: v.correcher@ciemat.e [CIEMAT, Madrid (Spain); Garcia-Guinea, J.; Crespo-Feo, E. [Museo Nacional de Ciencias Naturales, Madrid (Spain)

    2010-09-15

    The blue thermoluminescence (TL) emission of different thermally annealed {beta}-eucryptite (LiAlSiO{sub 4}), virgilite-petalite (LiAlSi{sub 5}O{sub 12}) and virgilite-petalite-bikitaite (LiAlSi{sub 10}O{sub 22}) mixed crystals have been studied. The observed changes in the TL glow curves could be linked to simultaneous processes taking place in the lithium aluminosilicate lattice structure (phase transitions, consecutive breaking linking of bonds, alkali self-diffusion, redox reactions, etc). The stability of the TL signal after four months of storage performed at RT under red light, shows big differences between annealed (12 hours at 1200 deg C) and non-annealed samples. The fading process in non-annealed samples can be fitted to a first-order decay mathematical expression; however preheated samples could not be reasonably fitted due to the highly dispersion detected. The changes observed in the X-ray diffractograms are in the intensity of the peaks that denote modifications in the degree of crystallinity and, in addition, there are some differences in the appearance of new peaks that could suppose new phases (e.g. b-spodumene). (author)

  8. Thermal annealing of protocrystalline a-Si:H

    NARCIS (Netherlands)

    Muller, T.F.G.; Arendse, C.J.; Halindintwali, S.; Knoesen, D.; Schropp, R.E.I.

    2011-01-01

    It proves difficult to obtain a set of protocrystalline silicon materials with different characteristics from the same deposition chamber to study the exact nature of these transition region materials. Hot-wire deposited protocrystalline silicon was thus isochronically annealed at different temperat

  9. High temperature annealing studies of strontium ion implanted glassy carbon

    Science.gov (United States)

    Odutemowo, O. S.; Malherbe, J. B.; Prinsloo, L.; Langa, D. F.; Wendler, E.

    2016-03-01

    Glassy carbon samples were implanted with 200 keV strontium ions to a fluence of 2 × 1016 ions/cm2 at room temperature. Analysis with Raman spectroscopy showed that ion bombardment amorphises the glassy carbon structure. Partial recovery of the glassy carbon structure was achieved after the implanted sample was vacuum annealed at 900 °C for 1 h. Annealing the strontium ion bombarded sample at 2000 °C for 5 h resulted in recovery of the glassy carbon substrate with the intensity of the D peak becoming lower than that of the pristine glassy carbon. Rutherford backscattering spectroscopy (RBS) showed that the implanted strontium diffused towards the surface of the glassy carbon after annealing the sample at 900 °C. This diffusion was also accompanied by loss of the implanted strontium. Comparison between the as-implanted and 900 °C depth profiles showed that less than 30% of the strontium was retained in the glassy carbon after heat treatment at 900 °C. The RBS profile after annealing at 2000 °C indicated that no strontium ions were retained after heat treatment at this temperature.

  10. Computer simulation of laser annealing of a nanostructured surface

    NARCIS (Netherlands)

    D. Ivanov; I. Marinov; Y. Gorbachev; A. Smirnov; V. Krzhizhanovskaya

    2009-01-01

    Laser annealing technology is used in mass production of new-generation semiconductor materials and nano-electronic devices like the MOS-based (metal-oxide-semiconductor) integrated circuits. Manufacturing sub-100 nm MOS devices demands application of ultra-shallow doping (junctions), which requires

  11. Meta-Modeling by Symbolic Regression and Pareto Simulated Annealing

    NARCIS (Netherlands)

    Stinstra, E.; Rennen, G.; Teeuwen, G.J.A.

    2006-01-01

    The subject of this paper is a new approach to Symbolic Regression.Other publications on Symbolic Regression use Genetic Programming.This paper describes an alternative method based on Pareto Simulated Annealing.Our method is based on linear regression for the estimation of constants.Interval arithm

  12. Annealing in sulfur of CZTS nanoparticles deposited through doctor blading

    DEFF Research Database (Denmark)

    Engberg, Sara Lena Josefin; Crovetto, Andrea

    of their optical and electronic properties before and after annealing. The effect of S content on grain growth is studied, and the topographic changes (i.e. grain size and morphology) are characterized with bidirectional reflectance distribution function (BRDF) and compared to surface profiling from atomic force...

  13. Electrochemically induced annealing of stainless-steel surfaces

    Science.gov (United States)

    Burstein, G. T.; Hutchings, I. M.; Sasaki, K.

    2000-10-01

    Modification of the surface properties of metals without affecting their bulk properties is of technological interest in demanding applications where surface stability and hardness are important. When austenitic stainless steel is heavily plastically deformed by grinding or rolling, a martensitic phase transformation occurs that causes significant changes in the bulk and surface mechanical properties of the alloy. This martensitic phase can also be generated in stainless-steel surfaces by cathodic charging, as a consequence of lattice strain generated by absorbed hydrogen. Heat treatment of the steel to temperatures of several hundred degrees can result in loss of the martensitic structure, but this alters the bulk properties of the alloy. Here we show that martensitic structures in stainless steel can be removed by appropriate electrochemical treatment in aqueous solutions at much lower temperature than conventional annealing treatments. This electrochemically induced annealing process allows the hardness of cold-worked stainless steels to be maintained, while eliminating the brittle martensitic phase from the surface. Using this approach, we are able to anneal the surface and near-surface regions of specimens that contain rolling-induced martensite throughout their bulk, as well as those containing surface martensite induced by grinding. Although the origin of the electrochemical annealing process still needs further clarification, we expect that this treatment will lead to further development in enhancing the surface properties of metals.

  14. Surface Structure of Hydroxyapatite from Simulated Annealing Molecular Dynamics Simulations.

    Science.gov (United States)

    Wu, Hong; Xu, Dingguo; Yang, Mingli; Zhang, Xingdong

    2016-05-10

    The surface structure of hydroxyapatite (HAP) is crucial for its bioactivity. Using a molecular dynamics simulated annealing method, we studied the structure and its variation with annealing temperature of the HAP (100) surface. In contrast to the commonly used HAP surface model, which is sliced from HAP crystal and then relaxed at 0 K with first-principles or force-field calculations, a new surface structure with gradual changes from ordered inside to disordered on the surface was revealed. The disordering is dependent on the annealing temperature, Tmax. When Tmax increases up to the melting point, which was usually adopted in experiments, the disordering increases, as reflected by its radial distribution functions, structural factors, and atomic coordination numbers. The disordering of annealed structures does not show significant changes when Tmax is above the melting point. The thickness of disordered layers is about 10 Å. The surface energy of the annealed structures at high temperature is significantly less than that of the crystal structure relaxed at room temperature. A three-layer model of interior, middle, and surface was then proposed to describe the surface structure of HAP. The interior layer retains the atomic configurations in crystal. The middle layer has its atoms moved and its groups rotated about their original locations. In the surface layer, the atomic arrangements are totally different from those in crystal. In particular for the hydroxyl groups, they move outward and cover the Ca(2+) ions, leaving holes occupied by the phosphate groups. Our study suggested a new model with disordered surface structures for studying the interaction of HAP-based biomaterials with other molecules. PMID:27096760

  15. Radiation and annealing response of WWER 440 beltline welding seams

    Science.gov (United States)

    Viehrig, Hans-Werner; Houska, Mario; Altstadt, Eberhard

    2015-01-01

    The focus of this paper is on the irradiation response and the effect of thermal annealing in weld materials extracted from decommissioned WWER 440 reactor pressure vessels of the nuclear power plant Greifswald. The characterisation is based on the measurement of the hardness, the yield stress, the Master Curve reference temperature, T0, and the Charpy-V transition temperature through the thickness of multi-layer beltline welding seams in the irradiated and the thermally annealed condition. Additionally, the weld bead structure was characterised by light microscopic studies. We observed a large variation in the through thickness T0 values in the irradiated as well as in thermally annealed condition. The T0 values measured with the T-S-oriented Charpy size SE(B) specimens cut from different thickness locations of the multilayer welding seams strongly depend on the intrinsic weld bead structure along the crack tip. The Master Curve, T0, and Charpy-V, TT47J, based ductile-to-brittle transition temperature progressions through the thickness of the multi-layer welding seam do not correspond to the forecast according to the Russian code. In general, the fracture toughness values at cleavage failure, KJc, measured on SE(B) specimens from the irradiated and large-scale thermally annealed beltline welding seams follow the Master Curve description, but more than the expected number lie outside the curves for 2% and 98% fracture probability. In this case the test standard ASTM E1921 indicates the investigated multi-layer weld metal as not uniform. The multi modal Master Curve based approach describes the temperature dependence of the specimen size adjusted KJc-1T values well. Thermal annealing at 475 °C for 152 h results in the expected decrease of the hardness and tensile strength and the shift of Master Curve and Charpy-V based ductile-to-brittle transition temperatures to lower values.

  16. Transient spinodal decomposition during annealing of rapidly solidified Al-10Sr alloy

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    Rapidly solidified Al-10Sr alloy ribbons were prepared using a single roller melt spinning technique. The annealing process of the rapidly solidified Al-10Sr alloy has been carried out using differential scanning calorimetry (DSC). The microstructure of as-annealed Al-10Sr alloy has been characterized by transmission electron microscopy (TEM). The equilibrium Al4Sr phase is dominant in the as-annealed alloy. Besides the Al4Sr phase, an AlSr phase is also found in the alloy isothermally annealed at 873 K for 90 min. Furthermore, a modulated nanostructure was observed in the alloy isothermally annealed at 873 K for 90 min. With further prolonged annealing time, however, the AlSr phase disappears in the as-annealed alloy. The dependence of particle size and growth rate on annealing time as well as the modulated structure shows that the occurrence of the AlSr phase may be due to the spinodal decomposition.

  17. Application of simulated annealing algorithm to optimizing sequencing of operation steps

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Discusses the optimization of machining operation sequencing by simulated annealing, and building a simulated annealing optimization model. From which, a new way to optimize operation sequencing can be developed.

  18. Performance enhancement of amorphous indium-zinc-oxide thin film transistors by microwave annealing

    Science.gov (United States)

    Xu, Rui; He, Jian; Li, Wei; Paine, David C.

    2015-12-01

    The effect of microwave annealing on the field effect mobility and threshold voltage of amorphous indium zinc oxide (a-IZO) thin film transistors (TFTs) is reported. A control device with traditional hotplate annealing at 200 °C for 1 h was applied for comparison. The results show that both microwave annealing and low-temperature hotplate annealing increase the field effect mobility from 12.3 cm2/V s in as-deposited state to ∼19 cm2/V s in annealed state. However, the negative shift in threshold voltage with microwave annealing (from 0.23 V to -2.86 V) is smaller than that with low-temperature hotplate annealing (to -9 V). A mechanism related with the electrical properties of a-IZO material is proposed. This rapid low-temperature annealing technology makes a-IZO TFTs promising for use in flexible, transparent electronics.

  19. Surface precipitates formed on annealed LSAT (001) single crystal.

    Science.gov (United States)

    Ohashi, Kazuki; Okada, Shunsuke; Sasaki, Katsuhiro; Tokunaga, Tomoharu; Kobayashi, Shunsuke; Yamamoto, Takahisa

    2014-11-01

    LSAT (La0.3Sr0.7)(Al0.65Ta0.35)O3, which has a complex perovskite structure of (A'A'')(B'B'')O3, is expected as an attracting substrates for GaN and high temperature superconductivity oxides solid thin films from a viewpoint of the suitable lattice matching. To grow high quality thin film, it is very important to prepare step-terrace structure on substrates used for thin film growth. For this purpose, a technique of annealing substrates with mirror surface is often used. However, surface precipitates, called surface mounts, are reported to appear after annealing LSAT substrates [1]. In this study, we investigated the surface precipitates formed on annealed LSAT surfaces by TEM/STEM. Further, we directly confirmed the terminated atomic layers at the annealed LSAT surfaces in the area without surface precipitates.Commercially available LSAT single crystal substrates with (001) surfaces (SHINKOSHA CO.,LTD) were used for TEM/STEM observation. After annealing at 1300°C for 30 min in air, the (001) surface structures were observed from [110] direction using cross sectional thin foils. The thin foils were prepared by joining two annealed LSAT (001) surfaces with glue, grinding, polishing and finally Ar ion milling. TEM/STEM observation was conducted by JEOL ARM-200F (a double Cs-corrector type for TEM/STEM) operated at 200kV.Surface mounds were confirmed to appear on LSAT crystal surface after annealing at the annealing condition used in this study. A typical example is shown in Fig. 1. shows TEM bright field image taken from the surface area of LSAT (001) after annealing. The observation direction of the image is [110], which is parallel to the annealed surface. Cross sectional images of surface mounts with 300nm was clearly seen as indicated by the arrows in the image. The height of the mounts is around 20nm, and it is noted that the interfaces between the mounts and LSAT surfaces are hollowed into LSAT crystal with the depth about 10nm. Nano diffractometric and EDS

  20. Polysilicon thin films fabricated by solid phase crystallization using reformed crystallization annealing technique

    International Nuclear Information System (INIS)

    In this work, a reformed crystallization annealing technique is presented for the solid phase crystallization (SPC) of amorphous silicon (a-Si) on SiNx-coated quartz substrate. This technique includes a two-step annealing process which consists of a low-temperature (475 °C) classical furnace annealing for nucleation of Si and a high-temperature (900 °C) grain growth process of polycrystalline silicon (poly-Si) during thermal annealing in classical tube furnace. The aim of this reformed two-step annealing technique is reducing the long (up to 48 h) crystallization annealing duration of single step annealing at low temperatures (∼ 600 °C) while maintaining the film quality, as low-temperature single step annealing, by using reformed technique. Continuous p-type poly-Si film was formed on quartz substrate thanks to exodiffusion of boron, which was deposited prior to a-Si, through Si film by thermal annealing. The stress and degree of crystallinity of the p-type poly-Si were studied by the micro-Raman Spectroscopy. The crystallization fraction value of 95% was deduced for annealed samples at 900 °C, independent from crystallization technique. On the other hand, the Raman analysis points out that compressive stress was induced by increasing the annealing duration at 900 °C. X-ray diffraction (XRD) analysis reveals that the preferred crystallite orientation of the films, independent from crystallization temperature and substrates, is <111>. Additionally, the average crystallite size calculated from XRD patterns increases from 69 Å to 165 Å by using reformed two-step annealing instead of single step annealing at 900 °C for 90 min. The exodiffusion of boron into the silicon film was deduced from secondary ion mass spectrometry (SIMS) analysis and the p+/p graded boron profile was obtained, which may result higher carrier diffusion length and longer carrier life time. Finally, the annealing duration dramatically decrease to 9 h by using reformed two-step annealing

  1. MoO3 Thickness, Thermal Annealing and Solvent Annealing Effects on Inverted and Direct Polymer Photovoltaic Solar Cells

    Directory of Open Access Journals (Sweden)

    Guillaume Wantz

    2012-11-01

    Full Text Available Several parameters of the fabrication process of inverted polymer bulk heterojunction solar cells based on titanium oxide as an electron selective layer and molybdenum oxide as a hole selective layer were tested in order to achieve efficient organic photovoltaic solar cells. Thermal annealing treatment is a common process to achieve optimum morphology, but it proved to be damageable for the performance of this kind of inverted solar cells. We demonstrate using Auger analysis combined with argon etching that diffusion of species occurs from the MoO3/Ag top layers into the active layer upon thermal annealing. In order to achieve efficient devices, the morphology of the bulk heterojunction was then manipulated using the solvent annealing technique as an alternative to thermal annealing. The influence of the MoO3 thickness was studied on inverted, as well as direct, structure. It appeared that only 1 nm-thick MoO3 is enough to exhibit highly efficient devices (PCE = 3.8% and that increasing the thickness up to 15 nm does not change the device performance. 

  2. Tunable metal-insulator transitions in bilayer graphene by thermal annealing

    OpenAIRE

    Kalon, Gopinadhan; Shin, Young Jun; Yang, Hyunsoo

    2012-01-01

    Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic pr...

  3. Annealing twin development during recrystallization and grain growth in pure nickel

    OpenAIRE

    Jin, Yuan; Lin, Brian; Bernacki, Marc; Gregory S. Rohrer; Rollet, Anthony D.; Bozzolo, Nathalie

    2014-01-01

    International audience A 99.995% pure Ni sample, compressed to 25%, was annealed in a SEM chamber and changes in the density of annealing twins were monitored in situ during recrystallization and grain growth. In addition to average microstructural measurements, the evolution of individual grains was also observed. Both the average annealing twin density in the recrystallized domain and the annealing twin density per grain increased during recrystallization. The rate of increase in twin de...

  4. Microscopic Properties of Quantum Annealing -- Application to Fully Frustrated Ising Systems

    OpenAIRE

    Tanaka, Shu

    2011-01-01

    In this paper we show quantum fluctuation effect of fully frustrated Ising spin systems. Quantum annealing has been expected to be an efficient method to find ground state of optimization problems. However it is not clear when to use the quantum annealing. In order to clarify when the quantum annealing works well, we have to study microscopic properties of quantum annealing. In fully frustrated Ising spin systems, there are macroscopically degenerated ground states. When we apply quantum anne...

  5. Population Annealing with Weighted Averages: A Monte Carlo Method for Rough Free Energy Landscapes

    OpenAIRE

    Machta, Jon

    2010-01-01

    The population annealing algorithm introduced by Hukushima and Iba is described. Population annealing combines simulated annealing and Boltzmann weighted differential reproduction within a population of replicas to sample equilibrium states. Population annealing gives direct access to the free energy. It is shown that unbiased measurements of observables can be obtained by weighted averages over many runs with weight factors related to the free energy estimate from the run. Population anneali...

  6. Nonadiabatic Quantum Annealing for One-Dimensional Trasverse-Field Ising Model

    OpenAIRE

    Katsuda, Hitoshi; Nishimori, Hidetoshi

    2013-01-01

    We propose a nonadiabatic approach to quantum annealing, in which we repeat quantum annealing in nonadiabatic time scales, and collect the final states of many realizations to find the ground state among them. In this way, we replace the diffculty of long annealing time in adiabatic quantum annealing by another problem of the number of nonsidabatic (short-time) trials. The one-dimensional transverse-field Ising model is used to test this idea, and it is shown that nonadiabatic quantum anneali...

  7. Quantum Annealing Effect on Entropic Slowing Down in Frustrated Decorated Bond System

    OpenAIRE

    Tanaka, Shu; Miyashita, Seiji

    2006-01-01

    We propose that the importance of the quantum annealing procedure to find the ground state of frustrated decorated bond systems where 'entropic slowing down' happens due to peculiar density of states. Here, we use the time dependent Schr\\"odinger equation to analyze the real time dynamics of the process. It is found that the quantum annealing is very efficient comparing to the thermal annealing for searching the ground state of the systems. We analyze the mechanism of quantum annealing from a...

  8. Quantum Annealing: from Viewpoints of Statistical Physics, Condensed Matter Physics, and Computational Physics

    OpenAIRE

    Tanaka, Shu; Tamura, Ryo

    2012-01-01

    In this paper, we review some features of quantum annealing and related topics from viewpoints of statistical physics, condensed matter physics, and computational physics. We can obtain a better solution of optimization problems in many cases by using the quantum annealing. Actually the efficiency of the quantum annealing has been demonstrated for problems based on statistical physics. Then the quantum annealing has been expected to be an efficient and generic solver of optimization problems....

  9. C-Curves of Tool Steels for Annealing and Their Application

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    TTT diagrams, CCT diagrams and critical points of steels H13, S7, S5 for annealing were measured and investigated by means of Formastor-Digital full-automatic phase transformation dilatometer in order to make their annealing technology reasonable and scientific. The basis is provided for making a new annealing technology scientifically. The new technology improves the quality of annealed materials, saves energy and increases productivity.

  10. Oxidation phase growth diagram of vanadium oxides film fabricated by rapid thermal annealing

    Institute of Scientific and Technical Information of China (English)

    Tamura KOZO; Zheng-cao LI; Yu-quan WANG; Jie NI; Yin HU; Zheng-jun ZHANG

    2009-01-01

    Thermal evaporation deposited vanadium oxide films were annealed in air by rapid thermal annealing (RTP). By adjusting the annealing temperature and time, a series of vanadium oxide films with various oxidation phases and surface morphologies were fabricated, and an oxidation phase growth diagram was established. It was observed that different oxidation phases appear at a limited and continuous annealing condition range, and the morphologic changes are related to the oxidation process.

  11. Influence of Annealing Conditions on Structure and Optical Properties of Copper Nanoparticles Embedded in Silica Matrix

    OpenAIRE

    Yeshchenko, Oleg A.; Dmitruk, Igor. M.; Dmytruk, Andriy M.; Alexeenko, Alexandr A.

    2006-01-01

    Copper nanoparticles have been grown in silica matrix by annealing of the sol-gel prepared porous matrix impregnated with the copper nitrate. The annealing has been performed in air, successively in air and hydrogen, and in hydrogen. Cu nanoparticles in size range of 2-65 nm have been grown depending on annealing conditions. Annealing in air results in copper oxide nanoparticles (Cu2O) growth as well. Transmission electron microscopy (TEM) and optical spectroscopy of the copper nanoparticles ...

  12. ANNEALING EFFECT ON MAGNETO-ELASTIC WAVE PROPAGATION IN IRON-RICH AMORPHOUS RIBBON

    OpenAIRE

    Yamada, K; Matsumoto, K.; Hasegawa, A.; Hiratsuka, N.

    1988-01-01

    The appropriate annealing of the iron-rich amorphous ribbon caused an enhancement of the magneto-elastic wave (MEW) amplitude. But the fluctuation of MEW with the distance along the ribbon became larger by any annealing. The differential magnetization curve sensitively showed a structural relaxation by the annealing.

  13. Quantitative microstructure characterization of self-annealed copper films with electron backscatter diffraction

    DEFF Research Database (Denmark)

    Pantleon, Karen; Gholinia, A.; Somers, Marcel A. J.

    2008-01-01

    Electron backscatter diffraction (EBSD) was applied to analyze cross sections of self-annealed copper electrodeposits, for which earlier the kinetics of self-annealing had been investigated by in-situ X-ray diffraction (XRD). The EBSD investigations on the grain size, grain boundary character and...... microstructure evolution at room temperature (self-annealing)....

  14. Influence of Microwave and Conventional Annealing Processes in Improving an Electrodeposited Nickel Interlayer Characteristics

    Science.gov (United States)

    Hassan, Abdelkarim; Noordin, Mohd Yusof; Izman, Sudin; Denni, Kurniawan

    2016-07-01

    Nickel interlayer was coated on tungsten carbide substrate by electrodeposition process for the purpose of diamond deposition. Conventional and microwave annealing processes were used to improve the adhesion strength and modify the surface composition of the electroplated nickel interlayer. The conventional annealing was conducted in a high-temperature tube furnace at 1323.15 K (1050 °C) for 20 and 60 minutes annealing durations. The microwave annealing was carried out in 2.45 GHz microwave furnace at 1303.15 K (1030 °C) for the same annealing durations as the conventional process. The annealed specimens were characterized by electron microscopy, Energy dispersive X-ray spectroscopy, and X-ray diffraction technique. Adhesion of the annealed nickel interlayer was assessed by the scratch test. The results revealed significant changes in the nickel coating composition, adhesion, and appearance. The adhesion strength of nickel interlayer annealed for the longer duration of the two processes is similar. For shorter annealing duration, the microwave-annealed coating showed better adhesion. The surface composition of the nickel interlayer was modified by the diffusion of carbon and tungsten during the microwave and conventional annealing, respectively. The microwave annealing is a promising process for producing good quality treated nickel-coated tungsten carbide specimens.

  15. Influence of Microwave and Conventional Annealing Processes in Improving an Electrodeposited Nickel Interlayer Characteristics

    Science.gov (United States)

    Hassan, Abdelkarim; Noordin, Mohd Yusof; Izman, Sudin; Denni, Kurniawan

    2016-10-01

    Nickel interlayer was coated on tungsten carbide substrate by electrodeposition process for the purpose of diamond deposition. Conventional and microwave annealing processes were used to improve the adhesion strength and modify the surface composition of the electroplated nickel interlayer. The conventional annealing was conducted in a high-temperature tube furnace at 1323.15 K (1050 °C) for 20 and 60 minutes annealing durations. The microwave annealing was carried out in 2.45 GHz microwave furnace at 1303.15 K (1030 °C) for the same annealing durations as the conventional process. The annealed specimens were characterized by electron microscopy, Energy dispersive X-ray spectroscopy, and X-ray diffraction technique. Adhesion of the annealed nickel interlayer was assessed by the scratch test. The results revealed significant changes in the nickel coating composition, adhesion, and appearance. The adhesion strength of nickel interlayer annealed for the longer duration of the two processes is similar. For shorter annealing duration, the microwave-annealed coating showed better adhesion. The surface composition of the nickel interlayer was modified by the diffusion of carbon and tungsten during the microwave and conventional annealing, respectively. The microwave annealing is a promising process for producing good quality treated nickel-coated tungsten carbide specimens.

  16. Effect of air annealing on structural and magnetic properties of Ni/NiO nanoparticles

    Science.gov (United States)

    Nadeem, K.; Ullah, Asmat; Mushtaq, M.; Kamran, M.; Hussain, S. S.; Mumtaz, M.

    2016-11-01

    We reported systematic study on structural and magnetic properties of nickel/nickel oxide (Ni/NiO) nanoparticles annealed under air atmosphere at different temperatures in the range 400-800 °C. The XRD spectra revealed two phases such as Ni and NiO. The average crystallite size increases with increasing annealing temperature. A phase diagram was developed between two phases versus annealing temperature using XRD analysis. At lower annealing temperatures, Ni phase is dominant which does not easily undergo oxidation to form NiO. The NiO phase increases with increasing annealing temperature. FTIR spectroscopy revealed an increase in the NiO phase content at higher annealing temperature, which is in agreement with the XRD analysis. SEM images showed that nanoparticles are well separated at lower annealing temperatures but get agglomerated at higher annealing temperatures. The ferromagnetic (FM) Ni phase content and saturation magnetization (Ms) showed nearly the same trend with increasing annealing temperature. The nanoparticles annealed at 500 °C and 800 °C revealed highest and lowest Ms values, respectively, which is in accordance with the XRD phase diagram. Coercivity showed an overall decreasing trend with increasing annealing temperature due to decreased concentration of FM Ni phase and increasing average crystallite size. All these measurements indicate that the structural and magnetic properties of Ni/NiO nanoparticles are strongly influenced by the annealing temperature.

  17. 10 CFR 50.66 - Requirements for thermal annealing of the reactor pressure vessel.

    Science.gov (United States)

    2010-01-01

    ... Requirements for thermal annealing of the reactor pressure vessel. (a) For those light water nuclear power... life of these components. (B) The effects of localized high temperatures on degradation of the concrete... thermal annealing or to operate the nuclear power reactor following the annealing must be identified....

  18. Radiation and annealing response of WWER 440 beltline welding seams

    Energy Technology Data Exchange (ETDEWEB)

    Viehrig, Hans-Werner, E-mail: h.w.viehrig@hzdr.de; Houska, Mario; Altstadt, Eberhard

    2015-01-15

    Highlights: • Investigation of the beltline welding seam from decommissioned reactor pressure vessels. • The Master Curve based reference temperature varies strongly through the thickness. • This variation is mainly caused by the intrinsic weld bead structure. • The Charpy-V based ductile-to-brittle temperature shift does not correspond to the prediction. • The mitigation of the irradiation induced embrittlement by annealing has been confirmed. - Abstract: The focus of this paper is on the irradiation response and the effect of thermal annealing in weld materials extracted from decommissioned WWER 440 reactor pressure vessels of the nuclear power plant Greifswald. The characterisation is based on the measurement of the hardness, the yield stress, the Master Curve reference temperature, T{sub 0}, and the Charpy-V transition temperature through the thickness of multi-layer beltline welding seams in the irradiated and the thermally annealed condition. Additionally, the weld bead structure was characterised by light microscopic studies. We observed a large variation in the through thickness T{sub 0} values in the irradiated as well as in thermally annealed condition. The T{sub 0} values measured with the T–S-oriented Charpy size SE(B) specimens cut from different thickness locations of the multilayer welding seams strongly depend on the intrinsic weld bead structure along the crack tip. The Master Curve, T{sub 0}, and Charpy-V, TT{sub 47J}, based ductile-to-brittle transition temperature progressions through the thickness of the multi-layer welding seam do not correspond to the forecast according to the Russian code. In general, the fracture toughness values at cleavage failure, K{sub Jc}, measured on SE(B) specimens from the irradiated and large-scale thermally annealed beltline welding seams follow the Master Curve description, but more than the expected number lie outside the curves for 2% and 98% fracture probability. In this case the test standard ASTM

  19. Influence of phosphate esters on the annealing properties of starch

    DEFF Research Database (Denmark)

    Wischmann, Bente; Muhrbeck, Per

    1998-01-01

    The effects of annealing on native potato, waxy maize, and phosphorylated waxy maize starches were compared. Phosphorylated waxy maize starch responded to annealing in a manner between that of the naturally phosphorylated potato starch and that of the native waxy maize starch. The gelatinisation...... end-point temperature was increased, whereas in the native waxy maize it was decreased. On the other hand, the onset temperature change was much larger in potato starch than in the two waxy maize starches. Steeping also yielded intermediate effects on the phosphorylated waxy maize starch. It was...... concluded that the phosphate groups have similar effects as they do in the native, naturally phosphorylated potato starch, although the substitution pattern is not entirely the same in the artificially phosphorylated starch....

  20. Parallel simulated annealing algorithms for cell placement on hypercube multiprocessors

    Science.gov (United States)

    Banerjee, Prithviraj; Jones, Mark Howard; Sargent, Jeff S.

    1990-01-01

    Two parallel algorithms for standard cell placement using simulated annealing are developed to run on distributed-memory message-passing hypercube multiprocessors. The cells can be mapped in a two-dimensional area of a chip onto processors in an n-dimensional hypercube in two ways, such that both small and large cell exchange and displacement moves can be applied. The computation of the cost function in parallel among all the processors in the hypercube is described, along with a distributed data structure that needs to be stored in the hypercube to support the parallel cost evaluation. A novel tree broadcasting strategy is used extensively for updating cell locations in the parallel environment. A dynamic parallel annealing schedule estimates the errors due to interacting parallel moves and adapts the rate of synchronization automatically. Two novel approaches in controlling error in parallel algorithms are described: heuristic cell coloring and adaptive sequence control.

  1. Thermal Performance of an Annealed Pyrolytic Graphite Solar Collector

    Science.gov (United States)

    Jaworske, Donald A.; Hornacek, Jennifer

    2002-01-01

    A solar collector having the combined properties of high solar absorptance, low infrared emittance, and high thermal conductivity is needed for applications where solar energy is to be absorbed and transported for use in minisatellites. Such a solar collector may be used with a low temperature differential heat engine to provide power or with a thermal bus for thermal switching applications. One concept being considered for the solar collector is an Al2O3 cermet coating applied to a thermal conductivity enhanced polished aluminum substrate. The cermet coating provides high solar absorptance and the polished aluminum provides low infrared emittance. Annealed pyrolytic graphite embedded in the aluminum substrate provides enhanced thermal conductivity. The as-measured thermal performance of an annealed pyrolytic graphite thermal conductivity enhanced polished aluminum solar collector, coated with a cermet coating, will be presented.

  2. A cooperative fast annealing coevolutionary algorithm for protein motif extraction

    Institute of Scientific and Technical Information of China (English)

    CHEN Chao; TIAN YuanXin; ZOU XiaoYong; CAI PeiXiang; MO JinYuan

    2007-01-01

    By integrating the cooperative approach with the fast annealing coevolutionary algorithm (FAEA), a so-called cooperative fast annealing coevolutionary algorithm (CFACA) is presented in this paper for the purpose of solving high-dimensional problems. After the partition of the search space in CFACA, each smaller one is then searched by a separate FAEA. The fitness function is evaluated by combining sub-solutions found by each of the FAEAs. It demonstrates that the CFACA outperforms the FAEA in the domain of function optimization, especially in terms of convergence rate. The current algorithm is also applied to a real optimization problem of protein motif extraction. And a satisfactory result has been obtained with the accuracy of prediction achieving 67.0%, which is in agreement with the result in the PROSITE database.

  3. Luminescence characteristics of nanoporous anodic alumina annealed at different temperatures

    Science.gov (United States)

    Ilin, D. O.; Vokhmintsev, A. S.; Weinstein, I. A.

    2016-09-01

    Anodic aluminum oxide (AAO) membranes with 100 µm thickness were synthesized in oxalic acid solution under constant current density. Grown samples were annealed in 500-1250 °C range for 5 h in air. Average pore diameter was evaluated using quantitative analysis of SEM images and appeared to be within 78-86 nm diapason. It was found there was a broad emission band in the 350-620 nm region of photoluminescence (PL) spectra in amorphous membranes which is attributed to F-type oxygen deficient centers or oxalic ions. It was shown that intensive red emission caused by Cr3+ (696 nm) and Mn4+ (680 nm) impurities dominates in PL of AAO samples with crystalline α- and δ-phases after annealing at 1100-1250 °C temperatures.

  4. Temperature-dependent permittivity of annealed and unannealed gold films

    CERN Document Server

    Shen, Po-Ting; Lin, Cheng-Wei; Liu, Hsiang-Lin; Chang, Chih-Wei; Chu, Shi-Wei

    2016-01-01

    Due to local field enhancement and subwavelength confinements, nano-plasmonics provide numerous novel applications. Simultaneously, as an efficient nanoscale heat generator from inherent absorption, thermo-plasmonics is emerging as an important branch. However, although significant temperature increase is involved in applications, detailed characterization of metal permittivity at different temperatures is lacking. In this work, we extract the permittivity of gold film from 300K to the annealing temperature of 570K. By comparing annealed and unannealed films, more than one-order difference in thermo-derivative of permittivity is revealed, resulting in unexpectedly large variation of plasmonic properties. Our result is valuable not only for characterizing extensively used unannealed nanoparticles, but also for designing future thermo-nano-plasmonic systems.

  5. Substructure stability of tungsten single crystals at high temperature annealing

    International Nuclear Information System (INIS)

    The effect is studied of isothermal annealing at (2600-2800) deg C for several hours on the growth substructure of tungsten single crystals of variable freedom from interstitials (varying within two orders of magnitude) and of W single crystals with additions of 0.1 and 4 at % Re, obtained by electron-beam crucible-free zone recrystallization. It is shown that the streaky structure of W and W+0.1 at.% Re single crystals, formed in the high-temperature effect zone during their post-solidification cooling, is relatively stable. A higher stability is shown by the specimens with an interstitials concentration roughly identical to 0.1 at.% and/or the same concenctration of the alloying addition. The cellular-fibrous substructure in W+4 at.%Re specimens formed at the crystal/melt interface is unstable. The high-temperature annealing brings about its transformation into a more equiaxial substructure

  6. In situ austenite–martensite interface mobility study during annealing

    International Nuclear Information System (INIS)

    A 1C3Mn1.5Si steel was partially transformed into martensite by quenching to room temperature after full austenitisation. A partitioning treatment was applied in situ in a high resolution transmission electron microscope. The width of an austenite grain in between martensite constituents was followed as a function of the annealing time. Migration of the martensite–austenite interfaces was quantitatively measured and compared with results from a model for carbon partitioning from martensite to austenite involving interface motion. The kinetics of the observed movement suggests that the interface has a semi-coherent nature. This work shows that grain boundary mobility of the martensite–austenite interfaces during annealing may play an important role in the microstructure development during the process of Quenching and Partitioning in steels

  7. Stochastic seismic inversion using greedy annealed importance sampling

    Science.gov (United States)

    Xue, Yang; Sen, Mrinal K.

    2016-10-01

    A global optimization method called very fast simulated annealing (VFSA) inversion has been applied to seismic inversion. Here we address some of the limitations of VFSA by developing a new stochastic inference method, named greedy annealed importance sampling (GAIS). GAIS combines VFSA and greedy importance sampling (GIS), which uses a greedy search in the important regions located by VFSA, in order to attain fast convergence and provide unbiased estimation. We demonstrate the performance of GAIS with application to seismic inversion of field post- and pre-stack datasets. The results indicate that GAIS can improve lateral continuity of the inverted impedance profiles and provide better estimation of uncertainties than using VFSA alone. Thus this new hybrid method combining global and local optimization methods can be applied in seismic reservoir characterization and reservoir monitoring for accurate estimation of reservoir models and their uncertainties.

  8. Annealing free, clean graphene transfer using alternative polymer scaffolds

    International Nuclear Information System (INIS)

    We examine the transfer of graphene grown by chemical vapor deposition (CVD) with polymer scaffolds of poly(methyl methacrylate) (PMMA), poly(lactic acid) (PLA), poly(phthalaldehyde) (PPA), and poly(bisphenol A carbonate) (PC). We find that optimally reactive PC scaffolds provide the cleanest graphene transfers without any annealing, after extensive comparison with optical microscopy, x-ray photoelectron spectroscopy, atomic force microscopy, and scanning tunneling microscopy. Comparatively, films transferred with PLA, PPA, PMMA/PC, and PMMA have a two-fold higher roughness and a five-fold higher chemical doping. Using PC scaffolds, we demonstrate the clean transfer of CVD multilayer graphene, fluorinated graphene, and hexagonal boron nitride. Our annealing free, PC transfers enable the use of atomically-clean nanomaterials in biomolecule encapsulation and flexible electronic applications. (paper)

  9. Effect of thermal-annealing on the magnetoresistance of manganite-based junctions

    Institute of Scientific and Technical Information of China (English)

    Xie Yan-Wu; Shen Bao-Gen; Sun Ji-Rong

    2008-01-01

    Thermal-annealing has been widely used in modulating the oxygen content of manganites. In this work, we have studied the effect of annealing on the transport properties and magnetoresistance of junctions composed of a La0.9Ca0.1MnO3+δ film and a Nb-doped SrTiO3 substrate. We have demonstrated that the magnetoresistance of junctions is strongly dependent on the annealing conditions: From the junction annealed-in-air to the junction annealed-in-vacuum, the magnetoresistance near 0-V bias can vary from ~-60% to~0. A possible mechanism accounting for this phenomenon is discussed.

  10. Effects of high magnetic field annealing on the initial recrystallized texture in pure copper

    Science.gov (United States)

    He, Tong; Wang, Yan; Sun, Wei; Zhao, Xiang

    2015-03-01

    The cold-rolled pure copper sheets were annealed with and without a high magnetic field of 12 T. The results showed that the magnetic annealing could promote the formation of the initial recrystallized cube texture. The magnetic annealing did not dramatically change the final annealing textures, but the intensity of the recrystallized cube texture is obviously different. The differences of the recrystallized cube orientation intensity between the specimens with and without the field annealing may be attributed to the effects of the magnetic field on the mobility of grain boundaries.

  11. Influences of Annealing on Residual Stress and Structure of HfO2 Films

    Institute of Scientific and Technical Information of China (English)

    SHEN Yan-Ming; SHAO Shu-Ying; DENG Zhen-Xia; HE Hong-Bo; SHAO Jian-Da; FAN Zheng-Xiu

    2007-01-01

    HfO2 films are deposited on BK7 glass substrates by electron beam evaporation. The influences of annealing between 100℃ and 400℃ on residual stresses and structures of HfO2 films are studied. It is found that little differences of spectra, residual stresses and structures are obtained after annealing at lower temperatures. After annealing at higher temperatures, the spectra shift to short wavelength, the residual stress increases with the increasing annealing temperature. At the same time, the crystallite size increases and interplanar distance decreases. The variations of optical spectra and residual stress correspond to the evolutions of structures induced by annealing.

  12. In situ annealing and high-rate silicon epitaxy on porous silicon by mesoplasma process

    Science.gov (United States)

    Zhang, Sheng; Lu, Ziyu; Sheng, Jiang; Gao, Pingqi; Yang, Xi; Wu, Sudong; Ye, Jichun; Kambara, Makoto

    2016-05-01

    By a mesoplasma process, a double-layer porous Si is annealed for a few seconds, by which an annealing effect similar to that of a prolonged conventional annealing process is obtained. The basic annealing process is considered to follow the classical sintering theory. However, the surface of the annealed porous Si is rough with large open voids because of H etching. The epitaxial Si films deposited on such a rough surface at a rate of 350 nm/s show a smooth surface with a low defect density compared with those deposited on a polished Si wafer, which clearly demonstrates the advantages of the cluster-assisted mesoplasma process.

  13. Thermal annealing of GaAs concentrator solar cells. [during electron irradiation

    Science.gov (United States)

    Curtis, H. B.; Brinker, D. J.

    1989-01-01

    The thermal annealing of GaAs concentrator cells after electron irradiation is reported. Results are given for cells annealed at 150, 200, and 250 C. Isochronal annealing was done for 20 min intervals up to 350 C. For cells irradiated with electrons of energies between 0.7 and 2.3 MeV, the recovery decreases with increasing electron energy. Isothermal and isochronal annealing produce the same recovery. Cells irradiated to 3 x 10 to the 15th or 1 x 10 to the 16th e/sq cm recover to similar unannealed fractions. Significant annealing is seen starting at 150 C, although very long times are required.

  14. Effects of Primary Annealing Condition on Recrystallization Texture in a Grain Oriented Silicon Steel

    Institute of Scientific and Technical Information of China (English)

    Yuhui SHA; Fang ZHANG; Song LI; Xiaoyu GAO; Jiazhen XU; Liang ZUO

    2004-01-01

    The recrystallization texture in grain oriented silicon steel sheets, which were annealed at different primary annealing temperatures with and without an electric field, was investigated. An automated electron backscattered diffraction (EBSD) technique was used to analyze the recrystallization texture. It was found that recovery and application of electric field in primary annealing lead to an increase of {001} component and a decrease of {111} component after annealing at 900℃. The development of recrystallization texture can be explained in terms of the effects of electric field and primary annealing temperature on recovery.

  15. Solving geometric constraints with genetic simulated annealing algorithm

    Institute of Scientific and Technical Information of China (English)

    刘生礼; 唐敏; 董金祥

    2003-01-01

    This paper applies genetic simulated annealing algorithm (SAGA) to solving geometric constraint problems. This method makes full use of the advantages of SAGA and can handle under-/over- constraint problems naturally. It has advantages (due to its not being sensitive to the initial values) over the Newton-Raphson method, and its yielding of multiple solutions, is an advantage over other optimal methods for multi-solution constraint system. Our experiments have proved the robustness and efficiency of this method.

  16. Dating thermal events at Cerro Prieto using fission track annealing

    Energy Technology Data Exchange (ETDEWEB)

    Sanford, S.J.; Elders, W..

    1981-01-01

    Data from laboratory experiments and geologic fading studies were compiled from published sources to produce lines of iso-annealing for apatite in time-temperature space. Fission track ages were calculated for samples from two wells at Cerro Prieto, one with an apparently simple and one with an apparently complex thermal history. Temperatures were estimated by empirical vitrinite reflectance geothermometry, fluid inclusion homogenization and oxygen isotope equilibrium. These estimates were compared with logs of measured borehole temperatures.

  17. Optimization of pipe networks including pumps by simulated annealing

    OpenAIRE

    Costa A.L.H.; Medeiros J.L.; Pessoa F.L.P.

    2000-01-01

    The objective of this work is to present an application of the simulated annealing method for the optimal design of pipe networks including pumps. Although its importance, the optimization of pumped networks did not receive great attention in the literature. The proposed search scheme explores the discrete space of the decision variables: pipe diameters and pump sizes. The behavior of the pumps is describe through the characteristic curve, generating more realistic solutions. In order to demo...

  18. Metallic glass composition. [That does not embrittle upon annealing

    Science.gov (United States)

    Kroeger, D.M.; Koch, C.C.

    1984-09-14

    This patent pertains to a metallic glass alloy that is either iron-based or nickel-based or based on a mixture of iron and nickel, containing lesser amounts of elements selected from the group boron, silicon, carbon and phosphorous to which is added an amount of a ductility-enhancing element selected from the group cerium, lanthanum, praseodymium and neodymium sufficient to increase ductility of the metallic glass upon annealing.

  19. Simulated Annealing for the 0/1 Multidimensional Knapsack Problem

    Institute of Scientific and Technical Information of China (English)

    Fubin Qian; Rui Ding

    2007-01-01

    In this paper a simulated annealing (SA) algorithm is presented for the 0/1 multidimensional knapsack problem. Problem-specific knowledge is incorporated in the algorithm description and evaluation of parameters in order to look into the performance of finite-time implementations of SA. Computational results show that SA performs much better than a genetic algorithm in terms of solution time, whilst having a modest loss of solution quality.

  20. Barium ferrite powders prepared by milling and annealing

    Directory of Open Access Journals (Sweden)

    R. Nowosielski

    2007-05-01

    Full Text Available Purpose: Microstructure and magnetic properties analysis of barium ferrite powder obtained by milling and heat treatment.Design/methodology/approach: The milling process was carried out in a vibratory mill, which generated vibrations of the balls and milled material inside the container during which their collisions occur. After milling process the powders were annealed in electric chamber furnace. The X-ray diffraction methods were used for qualitative phase analysis of studied powder samples. The distribution of powder particles was determined by a laser particle analyzer. The magnetic hysteresis loops of examined powder material were measured by resonance vibrating sample magnetometer (R-VSM.Findings: The milling process of iron oxide and barium carbonate mixture causes decrease of the crystallite size of involved phases. The X-ray investigations of tested mixture milled for 30 hours and annealed at 950 °C enabled the identification of hard magnetic BaFe12O19 phase and also the presence of Fe2O3 phase in examined material. The Fe2O3 phase is a rest of BaCO3 dissociation in the presence of Fe2O3, which forms a compound of BaFe12O19. The best coercive force (HC for mixture of powders annealed at 950 °C for 10, 20 and 30 hours is 349 kA/m, 366 kA/m and 364 kA/m, respectively. The arithmetic mean of diameter of Fe2O3 and BaCO3 mixture powders after 30 hours of milling is about 6.0 μm.Practical implications: The barium ferrite powder obtained by milling and annealing can be suitable components to produce sintered and elastic magnets with polymer matrix.Originality/value: The results of tested barium ferrite investigations by different methods confirm their utility in the microstructure and magnetic properties analysis of powder materials.

  1. Reverse degradation of nickel graphene junction by hydrogen annealing

    CERN Document Server

    Zhang, Zhenjun; Agnihotri, Pratik; Lee, Ji Ung; Lloyd, Jim R

    2016-01-01

    Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen annealing at moderate temperature (300 0C) is an effective technique to reverse the degradation.

  2. Rapid annealing using the water-wall arc lamp

    Science.gov (United States)

    Gelpey, Jeffrey C.; Stump, Paul O.

    1985-01-01

    Rapid annealing techniques using graphite strip heaters [1], tungsten-halogen lamps [2], and conventional arc lamps [3] have been gaining favor to provide controllable activation of ion implants while minimizing the diffusion of the implanted dopant. These conventional heat sources have given good results, but they all suffer from limitations in power output and/or the ability to change power levels rapidly. The water-wall d.c. arc lamp overcomes these limitations and allows precise control and excellent reproducability of the anneal cycle. The high power output and excellent optical coupling of the water-wall lamp allows ilumination from one side of the sample. The wafer temperature can then be directly monitored with a pyrometer and the fast response time of the lamp allows the pyrometer output to control the lamp power and, hence, provide direct feedback control of the wafer temperature. Direct control is important to overcome variations caused by different doping levels or dielectric coatings on the wafers. Annealing experiments using the water-wall lamp have shown that good activation and essentially complete removal of implant damage can be achieved while moving the junction only minimally [4,5]. The degree of dopant diffusion (generally on the order of 1000 Å) is small compared to device dimensions but is somewhat more than would be expected from classical diffusion theory using published diffusion coefficients. The differences depend on the implanted species and models are being developed to explain the discrepancies. The vary rapid heating and cooling rates obtainable with the water-wall lamp offer a great deal of flexibility in the time/temperature cycles used for annealing (or other rapid thermal processes). There are indications that the ability to achieve a rapid cooling rate allows more complete activation of high dose implants and rapid heating rates may reduce the residual damage and amount of diffusion.

  3. Rapid annealing using the water-wall arc lamp

    Energy Technology Data Exchange (ETDEWEB)

    Gelpey, J.C.; Stump, P.O. (Eaton Corp., Beverly, MA (USA). Semiconductor Equipment Operations)

    1985-01-01

    Rapid annealing techniques using graphite strip heaters, tungsten-halogen lamps and conventional arc lamps have been gaining favor to provide controllable activation of ion implants while minimizing the diffusion of the implanted dopant. These conventional heat sources have given good results, but they all suffer from limitations in power output and/or the ability to change power levels rapidly. The water-wall d.c. arc lamp overcomes these limitations and allows precise control and excellent reproducability of the anneal cycle. The high power output and excellent optical coupling of the water-wall lamp allows ilumination from one side of the sample. The wafer temperature can then be directly monitored with a pyrometer and the fast response time of the lamp allows the pyrometer output to control the lamp power and, hence, provide direct feedback control of the wafer temperature. Direct control is important to overcome variations caused by different doping levels or dielectric coatings on the wafers. Annealing experiments using the water-wall lamp have shown that good activation and essentially complete removal of implant damage can be achieved while moving the junction only minimally. The degree of dopant diffusion (generally on the order of 1000 A) is small compared to device dimensions but is somewhat more than would be expected from classical diffusion theory using published diffusion coefficients. The differences depend on the implanted species and models are being developed to explain the discrepancies. The vary rapid heating and cooling rates obtainable with the water-wall lamp offer a great deal of flexibility in the time/temperature cycles used for annealing (or other rapid thermal processes). There are indications that the ability to achieve a rapid cooling rate allows more complete activation of high dose implants and rapid heating rates may reduce the residual damage and amount of diffusion.

  4. Rapid annealing using the water-wall arc lamp

    International Nuclear Information System (INIS)

    Rapid annealing techniques using graphite strip heaters, tungsten-halogen lamps and conventional arc lamps have been gaining favor to provide controllable activation of ion implants while minimizing the diffusion of the implanted dopant. These conventional heat sources have given good results, but they all suffer from limitations in power output and/or the ability to change power levels rapidly. The water-wall d.c. arc lamp overcomes these limitations and allows precise control and excellent reproducability of the anneal cycle. The high power output and excellent optical coupling of the water-wall lamp allows ilumination from one side of the sample. The wafer temperature can then be directly monitored with a pyrometer and the fast response time of the lamp allows the pyrometer output to control the lamp power and, hence, provide direct feedback control of the wafer temperature. Direct control is important to overcome variations caused by different doping levels or dielectric coatings on the wafers. Annealing experiments using the water-wall lamp have shown that good activation and essentially complete removal of implant damage can be achieved while moving the junction only minimally. The degree of dopant diffusion (generally on the order of 1000 A) is small compared to device dimensions but is somewhat more than would be expected from classical diffusion theory using published diffusion coefficients. The differences depend on the implanted species and models are being developed to explain the discrepancies. The vary rapid heating and cooling rates obtainable with the water-wall lamp offer a great deal of flexibility in the time/temperature cycles used for annealing (or other rapid thermal processes). There are indications that the ability to achieve a rapid cooling rate allows more complete activation of high dose implants and rapid heating rates may reduce the residual damage and amount of diffusion. (orig.)

  5. Convergence of simulated annealing by the generalized transition probability

    OpenAIRE

    Nishimori, Hidetoshi; Inoue, Jun-Ichi

    1998-01-01

    We prove weak ergodicity of the inhomogeneous Markov process generated by the generalized transition probability of Tsallis and Stariolo under power-law decay of the temperature. We thus have a mathematical foundation to conjecture convergence of simulated annealing processes with the generalized transition probability to the minimum of the cost function. An explicitly solvable example in one dimension is analyzed in which the generalized transition probability leads to a fast convergence of ...

  6. Adaptive Simulated Annealing Based Protein Loop Modeling of Neurotoxins

    Institute of Scientific and Technical Information of China (English)

    陈杰; 黄丽娜; 彭志红

    2003-01-01

    A loop modeling method, adaptive simulated annealing, for ab initio prediction of protein loop structures, as an optimization problem of searching the global minimum of a given energy function, is proposed. An interface-friendly toolbox-LoopModeller in Windows and Linux systems, VC++ and OpenGL environments is developed for analysis and visualization. Simulation results of three short-chain neurotoxins modeled by LoopModeller show that the method proposed is fast and efficient.

  7. On-Orbit Annealing of Satellite Solar Panels

    OpenAIRE

    Michael, Sherif; Sommers, R.S.

    1988-01-01

    An approach to extend the life of orbiting satellites is presented. Since output power of spacecraft solar panels plays a major role in determining the end of life of the satellite, any attempt to recover any of this lost power would be very attractive. The goal of this research was to investigate the possibility of annealing radiation damaged solar panels under conditions that would be feasible to apply in orbiting spacecraft. Preliminary data of a technique called forward biased current ann...

  8. Near field modal noise reduction using annealed optical fiber

    OpenAIRE

    Osterman, Steve N.; Ycas, Gabriel G.; Donaldson, Chelsea L.; Diddams, Scott A.; Mahadevan, Suvrath; Ramsey, Lawrence W.; Plavchan, Peter P.

    2014-01-01

    Incomplete and unstable mode population has long complicated the application of optical fiber for transferring star and calibration light to high precision spectrographs. The need for improved precision calibrators in support of radial velocity planet surveys has led to the introduction of coherent wavelengths sources using single mode fibers that are then coupled into multi-mode fibers, further exacerbating this problem. We explore mode scrambling in annealed optical fiber with and without a...

  9. Reverse degradation of nickel graphene junction by hydrogen annealing

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhenjun; Yang, Fan; Agnihotri, Pratik; Lee, Ji Ung; Lloyd, J. R., E-mail: jlloyd@sunypoly.edu [College of Nanoscience and Engineering, SUNY Polytechnic Institute, Albany, NY USA 12203 (United States)

    2016-02-15

    Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen annealing at moderate temperature (300 {sup 0}C) is an effective technique to reverse the degradation.

  10. Maximum-Entropy Inference with a Programmable Annealer.

    Science.gov (United States)

    Chancellor, Nicholas; Szoke, Szilard; Vinci, Walter; Aeppli, Gabriel; Warburton, Paul A

    2016-03-03

    Optimisation problems typically involve finding the ground state (i.e. the minimum energy configuration) of a cost function with respect to many variables. If the variables are corrupted by noise then this maximises the likelihood that the solution is correct. The maximum entropy solution on the other hand takes the form of a Boltzmann distribution over the ground and excited states of the cost function to correct for noise. Here we use a programmable annealer for the information decoding problem which we simulate as a random Ising model in a field. We show experimentally that finite temperature maximum entropy decoding can give slightly better bit-error-rates than the maximum likelihood approach, confirming that useful information can be extracted from the excited states of the annealer. Furthermore we introduce a bit-by-bit analytical method which is agnostic to the specific application and use it to show that the annealer samples from a highly Boltzmann-like distribution. Machines of this kind are therefore candidates for use in a variety of machine learning applications which exploit maximum entropy inference, including language processing and image recognition.

  11. Annealing-induced change in quantum dot chain formation mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Park, Tyler D.; Colton, John S.; Farrer, Jeffrey K. [Department of Physics and Astronomy, Brigham Young University, Provo UT 84602 (United States); Yang, Haeyeon [Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701 (United States); Kim, Dong Jun [IPG Photonics Corporation, Oxford, MA 01540 (United States)

    2014-12-15

    Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.

  12. Annealing-induced change in quantum dot chain formation mechanism

    Science.gov (United States)

    Park, Tyler D.; Colton, John S.; Farrer, Jeffrey K.; Yang, Haeyeon; Kim, Dong Jun

    2014-12-01

    Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.

  13. Annealing of Silicate Dust by Nebular Shocks at 10 AU

    Science.gov (United States)

    Harker, David E.; Desch, Steven J.; DeVincenzi, D. (Technical Monitor)

    2001-01-01

    Silicate dust grains in the interstellar medium are known to be mostly amorphous, yet crystalline silicate grains have been observed in many long-period comets and in protoplanetary disks. Annealing of amorphous silicate grains into crystalline grains requires temperatures greater than or approximately equal to 1000 K, but exposure of dust grains in comets to such high temperatures is apparently incompatible with the generally low temperatures experienced by comets. This has led to the proposal of models in which dust grains were thermally processed near the protoSun, then underwent considerable radial transport until they reached the gas giant planet region where the long-period comets originated. We hypothesize instead that silicate dust grains were annealed in situ, by shock waves triggered by gravitational instabilities. We assume a shock speed of 5 km/s, a plausible value for shocks driven by gravitational instabilities. We calculate the peak temperatures of pyroxene grains under conditions typical in protoplanetary disks at 5-10 AU. We show that in situ annealing of micron-sized dust grains can occur, obviating the need for large-scale radial transport.

  14. Thin tungsten telluride layer preparation by thermal annealing

    Science.gov (United States)

    Lu, Wei; Zhang, Yudao; Zhu, Zusong; Lai, Jiawei; Zhao, Chuan; Liu, Xuefeng; Liu, Jing; Sun, Dong

    2016-10-01

    We report a simple method to prepare a thin Tungsten Telluride (WTe2) flake with accurate thickness control, which allows preparing and studying this two dimensional material conveniently. First, the WTe2 flake, which is relatively thick due to its strong interlayer van der Waals forces, is obtained by a conventional mechanical exfoliation method. Then, the exfoliated flake is annealed at 600 °C under a constant Ar protecting flow. Raman and atomic force spectroscopy characterizations demonstrate that thermal annealing can effectively thin down the WTe2 flake and retain its original lattice structure, though its surface smoothness is slightly deteriorated. Additionally, systematical study indicates that the thinning process strongly depends on the initial thickness of the WTe2 flake before annealing: the thinning rate increases from 0.12 nm min-1 to 0.36 nm min-1 as the initial thickness increases from 10 nm to 45 nm, while the roughness of the final product also increases with the increase of its initial thickness. However, the method fails when it is applied to WTe2 flakes thicker than 100 nm, resulting in uneven or burnt surface, which is possibly caused by big cavities formed by a large amount of defects gathered at the top surface.

  15. Maximum-Entropy Inference with a Programmable Annealer

    Science.gov (United States)

    Chancellor, Nicholas; Szoke, Szilard; Vinci, Walter; Aeppli, Gabriel; Warburton, Paul A.

    2016-03-01

    Optimisation problems typically involve finding the ground state (i.e. the minimum energy configuration) of a cost function with respect to many variables. If the variables are corrupted by noise then this maximises the likelihood that the solution is correct. The maximum entropy solution on the other hand takes the form of a Boltzmann distribution over the ground and excited states of the cost function to correct for noise. Here we use a programmable annealer for the information decoding problem which we simulate as a random Ising model in a field. We show experimentally that finite temperature maximum entropy decoding can give slightly better bit-error-rates than the maximum likelihood approach, confirming that useful information can be extracted from the excited states of the annealer. Furthermore we introduce a bit-by-bit analytical method which is agnostic to the specific application and use it to show that the annealer samples from a highly Boltzmann-like distribution. Machines of this kind are therefore candidates for use in a variety of machine learning applications which exploit maximum entropy inference, including language processing and image recognition.

  16. Reactor controller design using genetic algorithms with simulated annealing

    International Nuclear Information System (INIS)

    This chapter presents a digital control system for ITU TRIGA Mark-II reactor using genetic algorithms with simulated annealing. The basic principles of genetic algorithms for problem solving are inspired by the mechanism of natural selection. Natural selection is a biological process in which stronger individuals are likely to be winners in a competing environment. Genetic algorithms use a direct analogy of natural evolution. Genetic algorithms are global search techniques for optimisation but they are poor at hill-climbing. Simulated annealing has the ability of probabilistic hill-climbing. Thus, the two techniques are combined here to get a fine-tuned algorithm that yields a faster convergence and a more accurate search by introducing a new mutation operator like simulated annealing or an adaptive cooling schedule. In control system design, there are currently no systematic approaches to choose the controller parameters to obtain the desired performance. The controller parameters are usually determined by test and error with simulation and experimental analysis. Genetic algorithm is used automatically and efficiently searching for a set of controller parameters for better performance. (orig.)

  17. Microstructure Evolution and Grain Growth Kinetics in Annealed Nanocrystalline Chromium

    Energy Technology Data Exchange (ETDEWEB)

    Chojnowski, Grzegorz [Warsaw University; Przenioslo, Radoslaw [Warsaw University; Sosnowska, Izabela [Warsaw University; Bukowski, Mirko [University of Saarbrucken, Saarbrucken, Germany; Natter, Harald [University of Saarbrucken, Saarbrucken, Germany; Hempelmann, Rolf [University of Saarbrucken, Saarbrucken, Germany; Fitch, Andrew [European Synchrotron Radiation Facility (ESRF); Urban, Volker S [ORNL

    2007-01-01

    The kinetics of thermal evolution of the microstructure of nanocrystalline chromium (nano-Cr) has been studied by time-resolved synchrotron radiation techniques: high-resolution powder diffraction and small-angle X-ray scattering (SAXS). The as-prepared electrodeposited nano-Cr with average grain size of 27 nm shows the same bcc structure as {alpha}-Cr. The nano-Cr cubic lattice parameter thermal expansion is the same as that of reference polycrystalline {alpha}-Cr. Annealing of nano-Cr at temperatures above 400 C leads to a grain growth process with the final grain size not exceeding 125 nm even at a temperature of 700 C. The single power-law behavior is observed by SAXS in as-prepared nano-Cr changes during annealing above 400 C. In nano-Cr samples annealed at temperatures between 400 and 700 C, the low-q part of the SAXS signal shows a Porod-type behavior while the high-q part shows a power-law Q-{alpha} with the exponent {alpha} < 4. This effect is probably due to changes of the grain surface roughness during grain growth.

  18. Simulated annealing spectral clustering algorithm for image segmentation

    Institute of Scientific and Technical Information of China (English)

    Yifang Yang; and Yuping Wang

    2014-01-01

    The similarity measure is crucial to the performance of spectral clustering. The Gaussian kernel function based on the Euclidean distance is usual y adopted as the similarity mea-sure. However, the Euclidean distance measure cannot ful y reveal the complex distribution data, and the result of spectral clustering is very sensitive to the scaling parameter. To solve these problems, a new manifold distance measure and a novel simulated anneal-ing spectral clustering (SASC) algorithm based on the manifold distance measure are proposed. The simulated annealing based on genetic algorithm (SAGA), characterized by its rapid conver-gence to the global optimum, is used to cluster the sample points in the spectral mapping space. The proposed algorithm can not only reflect local and global consistency better, but also reduce the sensitivity of spectral clustering to the kernel parameter, which improves the algorithm’s clustering performance. To efficiently ap-ply the algorithm to image segmentation, the Nystr¨om method is used to reduce the computation complexity. Experimental re-sults show that compared with traditional clustering algorithms and those popular spectral clustering algorithms, the proposed algorithm can achieve better clustering performances on several synthetic datasets, texture images and real images.

  19. Nuclear techniques of analysis in diamond synthesis and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Jamieson, D. N.; Prawer, S.; Gonon, P.; Walker, R.; Dooley, S.; Bettiol, A.; Pearce, J. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Nuclear techniques of analysis have played an important role in the study of synthetic and laser annealed diamond. These measurements have mainly used ion beam analysis with a focused MeV ion beam in a nuclear microprobe system. A variety of techniques have been employed. One of the most important is nuclear elastic scattering, sometimes called non-Rutherford scattering, which has been used to accurately characterise diamond films for thickness and composition. This is possible by the use of a database of measured scattering cross sections. Recently, this work has been extended and nuclear elastic scattering cross sections for both natural boron isotopes have been measured. For radiation damaged diamond, a focused laser annealing scheme has been developed which produces near complete regrowth of MeV phosphorus implanted diamonds. In the laser annealed regions, proton induced x-ray emission has been used to show that 50 % of the P atoms occupy lattice sites. This opens the way to produce n-type diamond for microelectronic device applications. All these analytical applications utilize a focused MeV microbeam which is ideally suited for diamond analysis. This presentation reviews these applications, as well as the technology of nuclear techniques of analysis for diamond with a focused beam. 9 refs., 6 figs.

  20. Annealing-induced change in quantum dot chain formation mechanism

    Directory of Open Access Journals (Sweden)

    Tyler D. Park

    2014-12-01

    Full Text Available Self-assembled InGaAs quantum dot chains were grown using a modified Stranski-Krastanov method in which the InGaAs layer is deposited under a low growth temperature and high arsenic overpressure, which suppresses the formation of dots until a later annealing process. The dots are capped with a 100 nm GaAs layer. Three samples, having three different annealing temperatures of 460°C, 480°C, and 500°C, were studied by transmission electron microscopy. Results indicate two distinct types of dot formation processes: dots in the 460°C and 480°C samples form from platelet precursors in a one-to-one ratio whereas the dots in the sample annealed at 500°C form through the strain-driven self-assembly process, and then grow larger via an additional Ostwald ripening process whereby dots grow into larger dots at the expense of smaller seed islands. There are consequently significant morphological differences between the two types of dots, which explain many of the previously-reported differences in optical properties. Moreover, we also report evidence of indium segregation within the dots, with little or no indium intermixing between the dots and the surrounding GaAs barrier.

  1. Effect of Annealing Atmosphere on the Mechanical Property of Free-cutting Phosphor Bronze Alloy

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    The present work is focused on the influence of annealing atmosphere on the microstructure and mechanical property of free-cutting phosphor bronze alloy. The annealing of the alloy was conducted in the three kinds of annealing atmosphere such as air, vacuum and nitrogen. After annealing, a discernable difference in recystallized grain size and lead particle size was not appeared with different annealing atmosphere. The tensile strength of the alloy annealed in air or nitrogen atmosphere was higher than that of those annealed in vacuum atmosphere. In thecase of the alloy annealed in vacuum atmosphere, the mechanical strength was reduced by vaporization of zinc. In the case of annealing in nitrogen and in air atmosphere, the sweating of lead was occurred. However, the inverse segregation of lead was suppressed by copper oxide layer on the surface annealed in air. This copper oxide layer leads to a decrease of the yield during fabrication process. Therefore, annealing of the alloy in nitrogen atmosphere is favorable in terms of the mechanical strength and yield.

  2. Annealing induced reorientation of crystallites in Sn doped ZnO films

    Science.gov (United States)

    Ravichandran, K.; Vasanthi, M.; Thirumurugan, K.; Sakthivel, B.; Karthika, K.

    2014-11-01

    Tin doped ZnO thin films were prepared by employing a simplified spray pyrolysis technique using a perfume atomizer and subsequently annealed under different temperatures from 350 °C to 500 °C in steps of 50 °C. The structural, optical, electrical, photoluminescence and surface morphological properties of the as-deposited films were studied and compared with that of the annealed films. The X-ray diffraction studies showed that as-deposited film exhibits preferential orientation along the (0 0 2) plane and it changes in favour of (1 0 0) plane after annealing. The increase in crystallite size due to annealing is explained on the basis of Ostwald ripening effect. It is found that the optical transmittance and band gap increases with increase in annealing temperature. A slight decrease in resistivity caused by annealing is discussed in correlation with annealing induced defect modifications and surface morphology.

  3. Heavy Tails in the Distribution of Time to Solution for Classical and Quantum Annealing.

    Science.gov (United States)

    Steiger, Damian S; Rønnow, Troels F; Troyer, Matthias

    2015-12-01

    For many optimization algorithms the time to solution depends not only on the problem size but also on the specific problem instance and may vary by many orders of magnitude. It is then necessary to investigate the full distribution and especially its tail. Here, we analyze the distributions of annealing times for simulated annealing and simulated quantum annealing (by path integral quantum Monte Carlo simulation) for random Ising spin glass instances. We find power-law distributions with very heavy tails, corresponding to extremely hard instances, but far broader distributions-and thus worse performance for hard instances-for simulated quantum annealing than for simulated annealing. Fast, nonadiabatic, annealing schedules can improve the performance of simulated quantum annealing for very hard instances by many orders of magnitude. PMID:26684103

  4. Mechanism for accurate, protein-assisted DNA annealing by Deinococcus radiodurans DdrB.

    Science.gov (United States)

    Sugiman-Marangos, Seiji N; Weiss, Yoni M; Junop, Murray S

    2016-04-19

    Accurate pairing of DNA strands is essential for repair of DNA double-strand breaks (DSBs). How cells achieve accurate annealing when large regions of single-strand DNA are unpaired has remained unclear despite many efforts focused on understanding proteins, which mediate this process. Here we report the crystal structure of a single-strand annealing protein [DdrB (DNA damage response B)] in complex with a partially annealed DNA intermediate to 2.2 Å. This structure and supporting biochemical data reveal a mechanism for accurate annealing involving DdrB-mediated proofreading of strand complementarity. DdrB promotes high-fidelity annealing by constraining specific bases from unauthorized association and only releases annealed duplex when bound strands are fully complementary. To our knowledge, this mechanism provides the first understanding for how cells achieve accurate, protein-assisted strand annealing under biological conditions that would otherwise favor misannealing.

  5. Laser annealing and defect study of chalcogenide photovoltaic materials

    Science.gov (United States)

    Bhatia, Ashish

    Cu(In,Ga)Se2 (CIGSe), CuZnSn(S,Se)4(CZTSSe), etc., are the potential chalcogenide semiconductors being investigated for next-generation thin film photovoltaics (TFPV). While the champion cell efficiency of CIGSe has exceeded 20%, CZTSSe has crossed the 10% mark. This work investigates the effect of laser annealing on CISe films, and compares the electrical characteristics of CIGSe (chalcopyrite) and CZTSe (kesterite) solar cells. Chapter 1 through 3 provide a background on semiconductors and TFPV, properties of chalcopyrite and kesterite materials, and their characterization using deep level transient spectroscopy (DLTS) and thermal admittance spectroscopy (TAS). Chapter 4 investigates electrochemical deposition (nonvacuum synthesis) of CISe followed by continuous wave laser annealing (CWLA) using a 1064 nm laser. It is found that CWLA at ≈ 50 W/cm2 results in structural changes without melting and dewetting of the films. While Cu-poor samples show about 40% reduction in the full width at half maximum of the respective x-ray diffraction peaks, identically treated Cu-rich samples register more than 80% reduction. This study demonstrates that an entirely solid-phase laser annealing path exists for chalcopyrite phase formation and crystallization. Chapter 5 investigates the changes in defect populations after pulse laser annealing in submelting regime of electrochemically deposited and furnace annealed CISe films. DLTS on Schottky diodes reveal that the ionization energy of the dominant majority carrier defect state changes nonmonotonically from 215+/-10 meV for the reference sample, to 330+/-10 meV for samples irradiated at 20 and 30 mJ/cm2, and then back to 215+/-10 meV for samples irradiated at 40 mJ/cm2. A hypothesis involving competing processes of diffusion of Cu and laser-induced generation of In vacancies may explain this behavior. Chapter 6 compares the electrical characteristics of chalcopyrite and kesterite materials. Experiments reveal CZTSe cell has an

  6. Influence of initial annealing on structure evolution and magnetic properties of 3.4% Si non-oriented steel during final annealing

    Energy Technology Data Exchange (ETDEWEB)

    Simões Mendanha Pedrosa, Josiane [Department of Physics, Federal University of Ouro Preto, Ouro Preto MG-3540000 (Brazil); Costa Paolinelli, Sebastião da [Research Department Aperam South America, Praça Primeiro de Maio, 9, Timóteo MG-35180018 (Brazil); Barros Cota, André, E-mail: abcota@ufop.br [Department of Physics, Federal University of Ouro Preto, Ouro Preto MG-3540000 (Brazil)

    2015-11-01

    The effect of the initial annealing on structure evolution and magnetic properties during the final annealing of a 3.4% Si non-oriented grain steel was evaluated. Half of the samples were submitted to initial annealing at 1030 °C before cold rolling and all samples were subjected to final annealing process at temperatures from 540 °C to 1100 °C. The magnetic induction and core loss in the final samples, the microstructure by optical microscopy and the crystallographic texture by X-ray diffraction and EBSD were evaluated. The results show that the samples without initial annealing presented better magnetic properties than the samples with initial annealing, due to the higher ratio between Eta fiber and Gamma fiber volume fractions (Eta/Gamma ratio) in their structure after final annealing. - Highlights: • Texture and magnetic properties of 3.4% Si non-oriented electrical steel were measured. • Without initial annealing, better texture and magnetic properties were obtained. • Good texture and magnetic properties are obtained with Steckel hot band structure.

  7. Formation of oxygen related donors in step-annealed CZ–silicon

    Indian Academy of Sciences (India)

    Vikash Dubey; Shyam Singh

    2002-12-01

    The effect of step-annealing necessitated by the difficulties being faced in the long duration annealing treatments to be given to CZ–silicon has been studied. One pre-anneal of 10 h followed by annealing of 10 h causes a decrease in the absorption coefficient for carbon (c). Oxygen and carbon both accelerate thermal donor (TD) formation process but oxygen plays a dominating role. Three anneals of 10 h each followed by one anneal of 10 h support the view that carbon suppresses the donor formation. The absorption coefficient for carbon decreases after a few number of step-anneals resulting in the transformation of TD to new donor (ND) as brought about by annealing at temperature, > 500°C. It is quite logical to conclude that step-annealing may bring about the same results as obtained on continuous annealing for a longer duration. The results have been fully supported by proper interpretation in the light of existing theories.

  8. Effect of annealing in hydrogen atmosphere on ZnO films for field emission display

    Science.gov (United States)

    Zulkifli, Zurita; Sharma, Subash; Shinde, Sachin; Kalita, Golap; Tanemura, M.

    2015-11-01

    Surface morphology, crystallinity, conductivity and optical transmittance of ZnO films can be modified by annealing process. Hydrogen is one of the popular annealing gases as well as nitrogen, argon, oxygen and air which are commonly used for thin film cleaning or the removal of native oxide. In general, annealing is done at high temperatures (> 600degC) to improve the film properties. From a view point of environment, however, lower annealing temperature is preferable. In this work, low annealing process was challenged to understand the effect of annealing temperature on properties of ZnO thin films and nanostructured film grown on glass substrates for transparent field emission device applications. The annealing temperature employed was 100, 200 and 450°C at 100 sccm hydrogen flow rate. ZnO thin films were deposited by RF magnetron sputtering. The ZnO thin films were characterized by X-ray diffraction analysis (XRD), Atomic Force Microscopy (AFM), UV-VIS and Raman spectroscopy. The sheet resistances reduced about 15 kohm/sq at low annealing temperature. By contrast, the optical transmittance did not show any significant changes after annealing. The FE current density increased after the ZnO nanostructures film was annealed in 100°C. The results obtained could motivate a surface treatment for flexible ZnO thin film since the substrate is always suffered by heat.

  9. Acid hydrolysis of native and annealed starches and branch-structure of their Naegeli dextrins.

    Science.gov (United States)

    Nakazawa, Yuta; Wang, Ya-Jane

    2003-11-21

    Eight commercial starches, including common corn, waxy corn, wheat, tapioca, potato, Hylon V, Hylon VII, and mung bean starch, were annealed by a multiple-step process, and their gelatinization characteristics were determined. Annealed starches had higher gelatinization temperatures, reduced gelatinization ranges, and increased gelatinization enthalpies than their native starches. The annealed starches with the highest gelatinization enthalpies were subjected to acid hydrolysis with 15.3% H2SO4, and Naegeli dextrins were prepared after 10 days' hydrolysis. Annealing increased the acid susceptibility of native starches in the first (rapid) and the second (slow) phases with potato starch showing the greatest and high amylose starches showing the least changes. Starches with a larger shift in onset gelatinization temperature also displayed a greater percent hydrolysis. The increase in susceptibility to acid hydrolysis was proposed to result from defective and porous structures that resulted after annealing. Although annealing perfected the crystalline structure, it also produced void space, which led to porous structures and possible starch granule defects. The molecular size distribution and chain length distribution of Naegeli dextrins of annealed and native starches were analyzed. The reorganization of the starch molecule during annealing occurred mainly within the crystalline lamellae. Imperfect double helices in the crystalline lamellae improved after annealing, and the branch linkages at the imperfect double helices became protected by the improved crystalline structure. Therefore, more long chains were observed in the Naegeli dextrins of annealed starches than in native starches.

  10. Remarkably improved field emission of TiO2 nanotube arrays by annealing atmosphere engineering

    International Nuclear Information System (INIS)

    Highlights: • TNAs were prepared by anodization and annealed in different atmospheres. • The crystal structure and electronic properties of the prepared TNAs were investigated. • The field emission of TNAs was highly dependent on annealing atmosphere. • A low turn-on of 2.44 V/μm was obtained for TNAs annealed in H2 atmosphere. - Abstract: Highly ordered TiO2 nanotube arrays (TNAs) were prepared by anodization, and followed by annealing in the atmospheres of Air, Vacuum, Ar, and H2. The effect of annealing atmosphere on the crystal structure, composition, and electronic properties of TNAs were systematically investigated. Raman and EDS results indicated that the TNAs annealed in anaerobic atmospheres contained more oxygen vacancies, which result in the substantially improved electron transport properties and reduced work function. Moreover, it was found that the FE properties of TNAs were highly dependent on the annealing atmosphere. By engineering the annealing atmosphere, the turn-on field as low as 2.44 V/μm can be obtained from TNAs annealed in H2, which was much lower than the value of 18.23 V/μm from the TNAs annealed in the commonly used atmosphere of Air. Our work suggests an instructive and attractive way to fabricate high performance TNAs field emitters

  11. The influence of post-deposition annealing upon amorphous silicon/crystalline silicon heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Mikolášek, Miroslav, E-mail: miroslav.mikolasek@stuba.sk [Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); Nemec, Michal; Kováč, Jaroslav [Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovičova 3, 812 19 Bratislava (Slovakia); Foti, Marina; Gerardi, Cosimo [IMS-R and D, STMicroelectronics, Stradale Primosole, 50, 95121 Catania (Italy); Mannino, Giovanni; Valenti, Luca; Lombardo, Salvatore [CNR-IMM, Zona Industriale, Ottava Strada, 5, 95121 Catania (Italy)

    2014-11-15

    Highlights: • We studied the impact of the thermal annealing on the silicon heterojunction solar cells. • Compared were samples deposited by ICP-CVD and PE-CVD methods. • Annealing up to 250 °C improves output performance of both solar cells. • Annealing above 250 °C increases defect states density at the interface and in the amorphous emitter. • Samples deposited by ICP-CVD shows better resistance against annealing. - Abstract: This paper presents a comparative study of the influence of post-deposition annealing on amorphous silicon/crystalline silicon heterojunction solar cells deposited by ICP-CVD and PE-CVD techniques. Two major effects on the solar cell efficiency occur caused by thermal annealing. The first effect is a slight improvement of the performance on annealing up to 250 °C. The second effect, for annealing temperatures above 250 °C, reveals deterioration of the solar cell performance. It is suggested that both effects are related to thermally activated diffusion of hydrogen. For low annealing temperatures, diffusion of weakly bonded hydrogen allows to passivate the defects in the amorphous emitter and at the heterointerface. In the high temperature annealing region, outdiffusion of hydrogen is assumed to be responsible for an increase of defect states in the structures. The results indicate a better stability after high temperature treatment for the sample prepared by ICP-CVD technology.

  12. MICROSTRUCTURE AND PROPERTIES OF ANNEALED ZnO THIN FILMS DEPOSITED BY MAGNETRON SPUTTERING

    Institute of Scientific and Technical Information of China (English)

    J. Lee; W. Gao; Z. Li; M. Hodgson; A. Asadov; J. Metson

    2005-01-01

    ZnO thin films were deposited on a glass substrate by dc (direct current) and rf (radio frequency) magnetron sputtering. Post-deposition annealing was performed in different atmospheres and at different temperatures. The correlation of the annealing conditions with the microstructure and properties of the ZnO films were investigated by ultraviolet-visible spectroscopy, X-ray diffraction, conductivity measurement and scanning electron microscopy. Only the strong 002peak could be observed by X-ray diffraction. The post-deposition annealing of ZnO films was found to alter the film's microstructure and properties, including crystallinity, porosity, grain size, internal stress level and resistivity. It was also found that after annealing, the conductivity of poorly conductive samples often improved. However, annealing does not improve the conductivity of samples with high conductivity prior to annealing. The resistivity of as-grown films annealing on the conductivity of ZnO, it is believed that annealing may alter the presence and distribution of oxygen defects, reduce the lattice stress, cause diffusion, grain coarsening and recrystallization. Annealing will reduce the density of grain boundaries in less dense films,which may decrease the resistivity of the films. On the other hand, annealing may also increase the porosity of thin films, leading to an increase in resistivity.

  13. Remarkably improved field emission of TiO{sub 2} nanotube arrays by annealing atmosphere engineering

    Energy Technology Data Exchange (ETDEWEB)

    Liao, Ai-Zhen; Wang, Cheng-Wei, E-mail: cwwang@nwnu.edu.cn; Chen, Jian-Biao; Zhang, Xu-Qiang; Li, Yan; Wang, Jian

    2015-10-15

    Highlights: • TNAs were prepared by anodization and annealed in different atmospheres. • The crystal structure and electronic properties of the prepared TNAs were investigated. • The field emission of TNAs was highly dependent on annealing atmosphere. • A low turn-on of 2.44 V/μm was obtained for TNAs annealed in H{sub 2} atmosphere. - Abstract: Highly ordered TiO{sub 2} nanotube arrays (TNAs) were prepared by anodization, and followed by annealing in the atmospheres of Air, Vacuum, Ar, and H{sub 2}. The effect of annealing atmosphere on the crystal structure, composition, and electronic properties of TNAs were systematically investigated. Raman and EDS results indicated that the TNAs annealed in anaerobic atmospheres contained more oxygen vacancies, which result in the substantially improved electron transport properties and reduced work function. Moreover, it was found that the FE properties of TNAs were highly dependent on the annealing atmosphere. By engineering the annealing atmosphere, the turn-on field as low as 2.44 V/μm can be obtained from TNAs annealed in H{sub 2}, which was much lower than the value of 18.23 V/μm from the TNAs annealed in the commonly used atmosphere of Air. Our work suggests an instructive and attractive way to fabricate high performance TNAs field emitters.

  14. Reduced-Complexity Deterministic Annealing for Vector Quantizer Design

    Directory of Open Access Journals (Sweden)

    Ortega Antonio

    2005-01-01

    Full Text Available This paper presents a reduced-complexity deterministic annealing (DA approach for vector quantizer (VQ design by using soft information processing with simplified assignment measures. Low-complexity distributions are designed to mimic the Gibbs distribution, where the latter is the optimal distribution used in the standard DA method. These low-complexity distributions are simple enough to facilitate fast computation, but at the same time they can closely approximate the Gibbs distribution to result in near-optimal performance. We have also derived the theoretical performance loss at a given system entropy due to using the simple soft measures instead of the optimal Gibbs measure. We use thederived result to obtain optimal annealing schedules for the simple soft measures that approximate the annealing schedule for the optimal Gibbs distribution. The proposed reduced-complexity DA algorithms have significantly improved the quality of the final codebooks compared to the generalized Lloyd algorithm and standard stochastic relaxation techniques, both with and without the pairwise nearest neighbor (PNN codebook initialization. The proposed algorithms are able to evade the local minima and the results show that they are not sensitive to the choice of the initial codebook. Compared to the standard DA approach, the reduced-complexity DA algorithms can operate over 100 times faster with negligible performance difference. For example, for the design of a 16-dimensional vector quantizer having a rate of 0.4375 bit/sample for Gaussian source, the standard DA algorithm achieved 3.60 dB performance in 16 483 CPU seconds, whereas the reduced-complexity DA algorithm achieved the same performance in 136 CPU seconds. Other than VQ design, the DA techniques are applicable to problems such as classification, clustering, and resource allocation.

  15. Annealing behaviour of MeV erbium implanted lithium niobate

    Energy Technology Data Exchange (ETDEWEB)

    Gortmaker, P.; McCallum, J.C. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    Lithium niobate (LiNbO{sub 3}) is a crystalline ceramic commonly used in the fabrication of optoelectronic devices. Recently, rare earth doping of LiNbO{sub 3} has become a topic of particular interest. The electronic configuration of rare earth elements such as Erbium (Er) and Neodymium (Nd) allows them to lase in nearly any host matrix making fabrication of a whole range of new optoelectronic devices possible. At present, the doping technique, for LiNbO{sub 3} are centred upon diffusion technology, but the diffusion profiles for the rare earths are not generally well-matched to the optical modes of the device. The aim of this research is to develop MeV implantation and annealing conditions of rare earth doped LiNbO{sub 3} that would be compatible with optoelectronic device fabrication. To determine the characteristics of the rare earth elements in the LiNbO{sub 3} host material over the depth range of interest in optoelectronic device applications, high energy Rutherford backscattering spectrometry and ion channeling (RBS-C) must be used. Presented here are the Er depth profile and lattice damage results obtained from 5 MeV RBS-C measurements on samples of LiNbO{sub 3} implanted with various doses of MeV Erbium and subsequently thermally annealed at a temperature of 1000 deg C. It was found that there is a peak implant concentration (2 x 10{sup 16} Er/cm{sup 2}) for which erbium no longer goes substitutional in the lattice, and the implantation damage is not fully removed by annealing. 8 refs., 3 figs.

  16. Simulated annealing approach to the max cut problem

    Science.gov (United States)

    Sen, Sandip

    1993-03-01

    In this paper we address the problem of partitioning the nodes of a random graph into two sets, so as to maximize the sum of the weights on the edges connecting nodes belonging to different sets. This problem has important real-life counterparts, but has been proven to be NP-complete. As such, a number of heuristic solution techniques have been proposed in literature to address this problem. We propose a stochastic optimization technique, simulated annealing, to find solutions for the max cut problem. Our experiments verify that good solutions to the problem can be found using this algorithm in a reasonable amount of time.

  17. Global annealing genetic algorithm and its convergence analysis

    Institute of Scientific and Technical Information of China (English)

    张讲社; 徐宗本; 梁怡

    1997-01-01

    A new selection mechanism termed global annealing selection (GAnS) is proposed for the genetic algorithm. It is proved that the GAnS genetic algorithm converges to the global optimums if and only if the parents are allowed to compete for reproduction, and that the variance of population’s fitness can be used as a natural stopping criterion. Numerical simulations show that the new algorithm has stronger ability to escape from local maximum and converges more rapidly than canonical genetic algorithm.

  18. Radiation damage and annealing of amorphous silicon solar cells

    Science.gov (United States)

    Byvik, C. E.; Slemp, W. S.; Smith, B. T.; Buoncristiani, A. M.

    1984-01-01

    Amorphous silicon solar cells were irradiated with 1 MeV electrons at the Space Environmental Effects Laboratory of the NASA Langley Research Center. The cells accumulated a total fluence of 10 to the 14th, 10 to the 15th, and 10 to the 16th electrons per square centimeter and exhibited increasing degradation with each irradiation. This degradation was tracked by evaluating the I-V curves for AM0 illumination and the relative spectral response. The observed radiation damage was reversed following an anneal of the cells under vacuum at 200 C for 2 hours.

  19. Laser annealing of thin film polycrystalline silicon solar cell

    Directory of Open Access Journals (Sweden)

    Chowdhury A.

    2013-11-01

    Full Text Available Performances of thin film polycrystalline silicon solar cell grown on glass substrate, using solid phase crystallization of amorphous silicon can be limited by low dopant activation and high density of defects. Here, we investigate line shaped laser induced thermal annealing to passivate some of these defects in the sub-melt regime. Effect of laser power and scan speed on the open circuit voltage of the polysilicon solar cells is reported. The processing temperature was measured by thermal imaging camera. Enhancement of the open circuit voltage as high as 210% is achieved using this method. The results are discussed.

  20. Quantum Annealing and Computation: A Brief Documentary Note

    CERN Document Server

    Ghosh, Asim

    2013-01-01

    Major breakthrough in quantum computation has recently been achieved using quantum annealing to develop analog quantum computers instead of gate based computers. After a short introduction to quantum computation, we retrace very briefly the history of these developments and discuss the Indian researches in this connection and provide some interesting documents (in the Figs.) obtained from a chosen set of high impact papers (and also some recent news etc. blogs appearing in the Internet). This note is also designed to supplement an earlier note by Bose (Science and Culture, 79, pp. 337-378, 2013).

  1. MAP segmentation of magnetic resonance images using mean field annealing

    Science.gov (United States)

    Logenthiran, Ambalavaner; Snyder, Wesley E.; Santago, Peter, II; Link, Kerry M.

    1991-06-01

    An algorithm is described which segments magnetic resonance images while removing the noise from the images without blurring or other distortion of edges. The problem of segmentation and noise removal is posed as a restoration of an uncorrupted image, given additive white Gaussian noise and a segmentation cost. The problem is solved using a strategy called Mean Field Annealing. An a priori statistical model of the image, which includes the region classification, is chosen which drives the minimization toward solutions which are locally homogeneous and globally classified. Application of the algorithm to brain and knee images is presented.

  2. U-Mo Plate Blister Anneal Interim Report

    Energy Technology Data Exchange (ETDEWEB)

    Francine J. Rice; Daniel M. Wachs; Adam B. Robinson; Dennis D. Keiser Jr.; Jan-Fong Jue; Danielle M. Perez; Ross Finlay

    2010-10-01

    Blister thresholds in fuel elements have been a longstanding performance parameter for fuel elements of all types. This behavior has yet to be fully defined for the RERTR U-Mo fuel types. Blister anneal studies that began in 2007 have been expanded to include plates from more recent RERTR experiments. Preliminary data presented in this report encompasses the early generations of the U-Mo fuel systems and the most recent but still developing fuel system. Included is an overview of relevant dispersion fuel systems for the purposes of comparison.

  3. Some fundamental aspects of annealing and pickling stainless steels

    Science.gov (United States)

    Fernando, L. A.; Zaremski, D. R.

    1988-04-01

    The effects of annealing conditions on the scaling behavior of Types 304 and 430 strip and bar products were investigated as were surfaces resulting from three conventional descaling practices. Scanning Electron Microscopy (SEM), Scanning Auger Microprobe (SAM), Electron Spectroscopy for Chemical Analysis (ESCA), and X-Ray Diffraction (XRD) studies were aimed at correlating scale characteristics with ease of scale removal. Scale morphology as well as scale composition affects ease of scale removal; the magnitude of the effect depends on the descaling process used. For Type 304, the presence of a Mn sublayer seems to enhance descalability. The easy-to-descale samples of Type 430 all had a prominent Cr sublayer.

  4. Skymapping with OSSE via the Mean Field Annealing Pixon Technique

    CERN Document Server

    Dixon, D D; Zych, A D; Cheng, L X; Johnson, W N; Kurfess, J D; Pina, R K; Pütter, R C; Purcell, W R; Wheaton, W A; Wheaton, Wm. A.

    1997-01-01

    We present progress toward using scanned OSSE observations for mapping and sky survey work. To this end, we have developed a technique for detecting pointlike sources of unknown number and location, given that they appear in a background which is relatively featureless or which can be modeled. The technique, based on the newly developed concept and mean field annealing, is described, with sample reconstructions of data from the OSSE Virgo Survey. The results demonstrate the capability of reconstructing source information without any a priori information about the number and/or location of pointlike sources in the field-of-view.

  5. Annealing effects on the structure and electrical characteristics of amorphous Er2O3 films

    Institute of Scientific and Technical Information of China (English)

    Fang Ze-Bo; Zhu Yan-Yan; Wang Jia-Le; Jiang Zui-Min

    2009-01-01

    Amorphous Er2O3 films are deposited on Si (001) substrates by using reactive evaporation.This paper reports the evolution of the structure,morphology and electrical characteristics with annealing temperatures in an oxygen ambience.X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700℃.The capacitance in the accumulation region of Er2O3 films annealed at 450℃ is higher than that of as-deposited films and films annealed at other temperatures.An Er2O3/ErOx/SiOx/Si structure model is proposed to explain the results.The annealed films also exhibit a low leakage current density (around 1.38×10-4 A/cm2 at a bias of -1V) due to the evolution of morphology and composition of the films after they are annealed.

  6. Fe48Co52 Alloy Nanowire Arrays: Effects of Magnetic Field Annealing

    Institute of Scientific and Technical Information of China (English)

    Hai-lin Sua; Shao-long Tang; Rui-long Wang; Yi-qing Chen; Chong Jia; You-wei Du

    2009-01-01

    The effects of magnetic field annealing on the properties of Fe48Co52 alloy nanowire arrays with various interwire distances (Di=30-60 nm) and wire diameters (Dw=22-46 nm) were investigated in detail. It was found that the array's best annealing temperature and crys-talline structure did not show any apparent dependence on the treatment of applying a 3 kOe magnetic field along the wire during the annealing process. For arrays with small Dw or with large Di, the treatment of magnetic field annealing also had no obvious influence on their magnetic performances. However, such a magnetic field annealing constrained the shift of the easy magnetization direction and improved the coercivity and the squareness obviously for arrays with large Dw or with small Di. The difference in the intensity of the effective anisotropic field within the arrays was believed to be responsible for this different variation of the array's magnetic properties after magnetic field annealing.

  7. Effects of Rapid Recurrent Thermal Annealing on Giant Magnetoresistance NiFe/Ag Multilayers

    Institute of Scientific and Technical Information of China (English)

    文岐业; 张怀武; 蒋向东; 唐晓莉; 张万里

    2003-01-01

    NiFe/Ag multilayers were prepared by dc sputtering onto glass-ceramic substrates directly at room temperature.The samples were thermally processed by rapid recurrent thermal anneal (RRTA). We studied the effects of RRTA on giant magnetoresistance (GMR) NiFe/Ag multilayer by controlling the anneal temperature as well as the rapid anneal cycle. The samples after three RRTA cycles have a similar annealing temperature dependence of GMR responses to the ordinary annealed samples. With the increasing anneal cycle, the GMR response improved at first and then reached an unexpected high value of 9% before descent rapidly. Microstructure study shows that this effect is ascribed to the transformation of continuous NiFe layer into discontinuous one, and then into a granular like film in a step-by-step way.

  8. Annealing studies of α-irradiated Bi-Sr-Ca-Cu-O superconductors

    International Nuclear Information System (INIS)

    Polycrystalline samples of Bi2Sr2CaCu2O8+x (Bi-2212) and Bi1.84Pb0.34Sr1.91Ca2.03Cu3.06O10+x (Bi-2223) superconductors irradiated with 40 MeV α-particles at various doses have been annealed in oxygen and air. Irradiated Bi-2212 samples have been annealed at 450 deg C and Bi-2223 samples have been annealed at 500 deg C as well as at high temperature (850 deg C). At lower dose of irradiation, Tc of Bi-2212 samples has decreased after annealing. In case of Bi-2223, there has been partial recovery by annealing at low temperature. But, annealing at high temperature has been detrimental. (author). 6 refs., 3 tabs., 3 figs

  9. Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

    Directory of Open Access Journals (Sweden)

    Wan Zhenyu

    2011-01-01

    Full Text Available Abstract In this paper, a positive effect of rapid thermal annealing (RTA technique has been researched and compared with conventional furnace annealing for Si nanocrystalline in silicon carbide (SiC matrix system. Amorphous Si-rich SiC layer has been deposited by co-sputtering in different Si concentrations (50 to approximately 80 v%. Si nanocrystals (Si-NC containing different grain sizes have been fabricated within the SiC matrix under two different annealing conditions: furnace annealing and RTA both at 1,100°C. HRTEM image clearly reveals both Si and SiC-NC formed in the films. Much better "degree of crystallization" of Si-NC can be achieved in RTA than furnace annealing from the research of GIXRD and Raman analysis, especially in high-Si-concentration situation. Differences from the two annealing procedures and the crystallization mechanism have been discussed based on the experimental results.

  10. Effects of surface polishing and annealing on the optical conductivity of intermetallic compounds

    CERN Document Server

    Rhee, J Y

    1999-01-01

    The optical conductivity spectra of several intermetallic compounds were measured by spectroscopic ellipsometry. Three spectra were measured for each compound; just after the sample was mechanically polished, at high temperature, and after the sample was annealed at 110 .deg. C for at least one day and cooled to room temperature. An equiatomic FeTi alloy showed the typical effects of annealing after mechanical polishing of surface. The spectrum after annealing had a larger magnitude and sharper structures than the spectrum before annealing. We also observed shifts of peaks in the spectrum. A relatively low-temperature annealing gave rise to unexpectedly substantial effects, and the effects were explained by recrystallization and/or a disorder -> order transition of the surface of the sample which was damaged and, hence, became highly disordered by mechanical polishing. Similar effects were also observed when the sample temperature was lowered. The observed changes upon annealing could partly be explained by p...

  11. Considerable improvement in the stability of solution processed small molecule OLED by annealing

    International Nuclear Information System (INIS)

    We investigated the annealing effect on solution processed small organic molecule organic films, which were annealed with various conditions. It was found that the densities of the spin-coated (SC) films increased and the surface roughness decreased as the annealing temperature rose. We fabricated corresponding organic light emitting diodes (OLEDs) by spin coating on the same annealing conditions. The solution processed OLEDs show the considerable efficiency and stability, which were prior or equivalent to the vacuum-deposited (VD) counterparts. Our research shows that annealing process plays a key role in prolonging the lifetime of solution processed small molecule OLEDs, and the mechanism for the improvement of the device performance upon annealing was also discussed.

  12. Effect of Solution Annealing Temperature on Pitting Behavior of Duplex Stainless Steel 2204 in Chloride Solutions

    Institute of Scientific and Technical Information of China (English)

    Liang HE; Yan-jun GUO; Xia-yu WU; Yi-ming JIANG; Jin LI

    2016-01-01

    The effect of solution annealing temperature ranging from 950 to 1 200 ℃ on the microstructure and corro-sion performance of duplex stainless steel (DSS)2204 were investigated.The proportion of the ferrite phase in-creased while the austenite phase decreased and the ferrite stabilizing elements diluted in the ferrite phase with the in-crease of annealing temperature.The critical pitting temperature (CPT)of specimens annealed at 1 000 ℃ was higher than those annealed at 950 ℃,whereas further increasing the annealing temperature to 1 200 ℃ decreased the CPT. The pitting initiation sites were observed in the austenite phase,at the boundary of ferrite/austenite phase and inside the ferrite phase for specimens annealed at 950,1 000 ℃ and exceeding 1 100 ℃,respectively.The evolution trend of the CPT and the pit initiation site were analyzed by the pitting resistance equivalent number.

  13. Enhancement of Stability of Polymer Light-Emitting Diodes by Post Annealing

    Institute of Scientific and Technical Information of China (English)

    YAO Bing; XIE Zhi-Yuan; YANG Jun-Wei; CHENG Yan-Xiang; WANG Li-Xiang

    2007-01-01

    We investigate the effect of thermal annealing before and after cathode deposition on the stability of polymer light-emitting diodes (PLEDs) based on green fluorescent polyfluorene derivative. The annealed PLEDs exhibit improved charge transport and red-shift emission compared to the as-fabricated device. The stability of the PLEDs is largely enhanced by post-annealing before and after Ca deposition, which is attributed to the enhanced charge transport and the intimate contact between the cathode and the emissive layer.

  14. Low-temperature illumination and annealing of ultra-high quality quantum wells

    OpenAIRE

    Samani, Mohammad; Rossokhaty, Alexander V.; Sajadi, Ebrahim; Lüscher, Silvia; Folk, Joshua A.; Watson, John D.; Gardner, Geoffrey C.; Manfra, Michael J.

    2014-01-01

    The effects of low temperature illumination and annealing on fractional quantum Hall (FQH) characteristics of a GaAs/AlGaAs quantum well are investigated. Illumination alone, below 1 K, decreases the density of the 2DEG electrons by more than an order of magnitude and resets the sample to a repeatable initial state. Subsequent thermal annealing at a few Kelvin restores the original density and dramatically improves FQH characteristics. A reliable illumination and annealing recipe is developed...

  15. Heavy tails in the distribution of time-to-solution for classical and quantum annealing

    OpenAIRE

    Steiger, Damian S.; Rønnow, Troels F.; Troyer, Matthias

    2015-01-01

    For many optimization algorithms the time-to-solution depends not only on the problem size but also on the specific problem instance and may vary by many orders of magnitude. It is then necessary to investigate the full distribution and especially its tail. Here we analyze the distributions of annealing times for simulated annealing and simulated quantum annealing (by path integral quantum Monte Carlo) for random Ising spin glass instances. We find power-law distributions with very heavy tail...

  16. Annealing Induced Transmission Improvements and Photoluminescence Reduction of ARROW Optofluidic Chips for Improved Fluorescence Detection

    OpenAIRE

    Parks, Joshua W.

    2012-01-01

    Effects of thermal annealing on liquid- and solid-core antiresonant reflective optical waveguides (ARROW) are herein investigated. Transmission changes of 10 to 1000 fold increases are observed post annealing at either 300 or 700 °C. Furthermore, upon 700 °C annealing, the detectable photoluminescence of tantalum oxide cladding layers is reduced to half that of its original value. The suggestible cause for change in transmission is increased modal confinement within the ridge waveguid...

  17. Constrained multi-global optimization using a penalty stretched simulated annealing framework

    OpenAIRE

    Pereira, Ana I.; Edite M.G.P. Fernandes

    2009-01-01

    This paper presents a new simulated annealing algorithm to solve constrained multi-global optimization problems. To compute all global solutions in a sequential manner, we combine the function stretching technique with the adaptive simulated annealing variant. Constraint-handling is carried out through a nondifferentiable penalty function. To benchmark our penalty stretched simulated annealing algorithm we solve a set of well-known problems. Our preliminary numerical results show that the alg...

  18. Time series forecasting using a TSK fuzzy system tuned with simulated annealing

    OpenAIRE

    Almaraashi, Majid; John, Robert; Coupland, Simon; Hopgood, Adrian

    2010-01-01

    In this paper, a combination of a Takagi-Sugeno fuzzy system (TSK) and simulated annealing is used to predict well known time series by searching for the best configuration of the fuzzy system. Simulated annealing is used to optimise the parameters of the antecedent and the consequent parts of the fuzzy system rules. The results of the proposed method are encouraging indicating that simulated annealing and fuzzy logic are able to combine well in time series prediction.

  19. Properties of a Nb-V-Ti microalloyed steel influenced by cold rolling and annealing

    OpenAIRE

    M. Janošec; I. Schindler; J. Palát; L. Čížek; V. Vodárek; E. Místecký; Růžička, M. (Marek); L.A. Dobrzański; S. Rusz; P. Suchánek

    2007-01-01

    Purpose: was to investigate impact of cold forming and annealing on microstructural and mechanical propertiesof HSLA steel.Design/methodology/approach: Testing of Nb-V-Ti microalloyed strip steel was based on a combination ofcold rolling, recrystallization annealing, mechanical testing, metallography and TEM.Findings: It was confirmed that by a suitable combination of size of previous cold reduction size and parametersof the following annealing it is possible to influence considerably a compl...

  20. Connection between Annealed Free Energy and Belief Propagation on Random Factor Graph Ensembles

    OpenAIRE

    Mori, Ryuhei

    2011-01-01

    Recently, Vontobel showed the relationship between Bethe free energy and annealed free energy for protograph factor graph ensembles. In this paper, annealed free energy of any random regular, irregular and Poisson factor graph ensembles are connected to Bethe free energy. The annealed free energy is expressed as the solution of maximization problem whose stationary condition equations coincide with equations of belief propagation since the contribution to partition function of particular type...

  1. Recognition of hairpin DNA from coil DNA by electrospray mass spectrometry with annealing strategy

    Institute of Scientific and Technical Information of China (English)

    Bo Zheng; Yi Quan Liu; Gu Yuan

    2012-01-01

    This research presented an annealing strategy to identify hairpin DNA from coil DNA with the same base composition but different arrangements using electrospray mass spectrometry (ESI-MS).A series of single-stranded DNA were annealed with their complementary sequences,respectively.All the five pairs of hairpin DNA and coil DNA were unambiguously distinguished by ESIMS with annealing strategy.This research offers a potential method to probe the DNA structure by comparing with mass spectral characteristics.

  2. Influence of cold rolling and annealing on mechanical properties of steel QStE 420

    OpenAIRE

    I. Schindler; M. Janošec; E. Místecký; M. Růžička; L. Čížek a; L.A. Dobrzański; S. Rusz; P. Suchánek

    2006-01-01

    Purpose: was to investigate impact of cold reduction size and annealing on mechanical properties of HSLAsteel.Design/methodology/approach: Testing of strip steel QStE 420 was based on a combination of cold rolling,recrystallization annealing, mechanical testing and metallographic analyses.Findings: It was confirmed that by a suitable combination of size of previous cold deformation and parametersof the following annealing it is possible to influence considerably a complex of mechanical proper...

  3. Evolution of nano-structures of silver due to rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Mondal, Shyamal, E-mail: shyamal.mondal@saha.ac.in; Bhattacharyya, S. R., E-mail: shyamal.mondal@saha.ac.in [Saha Institute of Nuclear Physics, 1/AF Bidhan Nagar, Kolkata-700064 (India)

    2014-04-24

    This report deals with rapid thermal annealing (RTA) effect on continuous silver film on Si(100) substrate. For this purpose silver films of different thicknesses were deposited and subsequently annealed at 500 and 800 °C. The as-deposited and annealed samples were investigated by scanning electron microscope (SEM). Formations of different nano-structures have been observed. Fragmentation of formed nanoislands also observed at temperature below melting temperature.

  4. A Study on Stainless Steel 316L Annealed Ultrasonic Consolidation and Linear Welding Density Estimation

    OpenAIRE

    Gonzalez, Raelvim

    2010-01-01

    Ultrasonic Consolidation of stainless steel structures is being investigated for potential applications. This study investigates the suitability of Stainless Steel 316L annealed (SS316L annealed) as a building material for Ultrasonic Consolidation (UC), including research on Linear Welding Density (LWD) estimation on micrographs of samples. Experiment results are presented that include the effect of UC process parameters on SS316L annealed UC, optimum levels of these parameters, and bond qual...

  5. Chromium depletion from stainless steels during vacuum annealing

    International Nuclear Information System (INIS)

    The behaviour of chromium during selective evaporation by high temperature vacuum annealing has been investigated by means of energy dispersive X-ray analysis and by neutron activation analysis. It was established that the rate of chromium loss from austenitic stainless steels 316 and 321 is controlled by chromium inter-diffusion rather than tracer diffusion in the alloy. Two important parameters in selective removal of chromium from alloy steels are the variation in the chromium surface concentration with time and the depletion profile in the alloy. The present work gives support for the model in which loss of chromium is dependent on its diffusivity in the alloy and on an interface transfer coefficient. The results showed that the surface concentration of chromium decreased with increasing vacuum annealing time. The chromium depletion profile in the metal was in accord with the previous derived model, apart from an anomalous near surface region. Here the higher resolution of a neutron activation technique indicated a region within approximately 2 microns of the surface where the chromium concentration decreased more steeply than expected. (author)

  6. Precision and the approach to optimality in quantum annealing processors

    Science.gov (United States)

    Johnson, Mark W.

    The last few years have seen both a significant technological advance towards the practical application of, and a growing scientific interest in the underlying behaviour of quantum annealing (QA) algorithms. A series of commercially available QA processors, most recently the D-Wave 2XTM 1000 qubit processor, have provided a valuable platform for empirical study of QA at a non-trivial scale. From this it has become clear that misspecification of Hamiltonian parameters is an important performance consideration, both for the goal of studying the underlying physics of QA, as well as that of building a practical and useful QA processor. The empirical study of the physics of QA requires a way to look beyond Hamiltonian misspecification.Recently, a solver metric called 'time-to-target' was proposed as a way to compare quantum annealing processors to classical heuristic algorithms. This approach puts emphasis on analyzing a solver's short time approach to the ground state. In this presentation I will review the processor technology, based on superconducting flux qubits, and some of the known sources of error in Hamiltonian specification. I will then discuss recent advances in reducing Hamiltonian specification error, as well as review the time-to-target metric and empirical results analyzed in this way.

  7. Strain localization in annealed Cu50Zr50 metallic glass

    International Nuclear Information System (INIS)

    Highlights: → Analysis of the atomic structural change of the Cu50Zr50 by the heat treatment. → Confirmation of the change in the mechanical behavior obtained experimentally. → Verification of the validity of the normalized relaxation heat parameter. → Measure the strain localization using computational elastostatic compression. - Abstract: A molecular dynamics simulation technique was used to investigate the atomic structural changes in Cu50Zr50 metallic glass during isothermal annealing, with the aim of clarifying the mechanism responsible for the reduction of the plasticity experimentally observed during uniaxial loading of heat-treated Cu50Zr50. The atomic strain during shear deformation was calculated for the as-cast and annealed samples to evaluate the degree of strain localization, which affects the global plasticity of the alloys. The validity of the normalized relaxation heat parameter used to evaluate the degree of strain localization has been verified during elastostatic compression. The variation of the potential energy in the elastic regime, which was found to be correlated to the degree of strain localization, is proposed as parameter to evaluate by computational simulation the ability of an amorphous alloy to deform plastically.

  8. Power change in amorphous silicon technology by low temperature annealing

    Directory of Open Access Journals (Sweden)

    Mittal Ankit

    2015-01-01

    Full Text Available Amorphous silicon (a-Si is one of the best established thin-film solar-cell technologies. Despite its long history of research, it still has many critical issues because of its defect rich material and its susceptibility to degrade under light also called as Staebler-Wronski effect (SWE. This leads to an increase in the defect density of a-Si, but as a metastable effect it can be completely healed at temperatures above 170 °C. Our study is focused on investigating the behavior of annealing of different a-Si modules under low temperature conditions below 80 °C indicated by successive change of module power. These conditions reflect the environmental temperature impact of the modules in the field, or integrated in buildings as well. The power changes were followed by STC power rating and investigation of module-power evolution under low irradiance conditions at 50 W/m2. Our samples were recovered close to their initial state of power, reaching as high as 99% from its degraded value. This shows the influence of low temperature annealing and light on metastable module behavior in a-Si thin-film modules.

  9. List-Based Simulated Annealing Algorithm for Traveling Salesman Problem.

    Science.gov (United States)

    Zhan, Shi-hua; Lin, Juan; Zhang, Ze-jun; Zhong, Yi-wen

    2016-01-01

    Simulated annealing (SA) algorithm is a popular intelligent optimization algorithm which has been successfully applied in many fields. Parameters' setting is a key factor for its performance, but it is also a tedious work. To simplify parameters setting, we present a list-based simulated annealing (LBSA) algorithm to solve traveling salesman problem (TSP). LBSA algorithm uses a novel list-based cooling schedule to control the decrease of temperature. Specifically, a list of temperatures is created first, and then the maximum temperature in list is used by Metropolis acceptance criterion to decide whether to accept a candidate solution. The temperature list is adapted iteratively according to the topology of the solution space of the problem. The effectiveness and the parameter sensitivity of the list-based cooling schedule are illustrated through benchmark TSP problems. The LBSA algorithm, whose performance is robust on a wide range of parameter values, shows competitive performance compared with some other state-of-the-art algorithms. PMID:27034650

  10. Defect reduction in silicon nanocrystals by low-temperature annealing

    Energy Technology Data Exchange (ETDEWEB)

    Niesar, Sabrina; Erhard, Nadine; Stegner, Andre R.; Brandt, Martin S.; Stutzmann, Martin [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany); Pereira, Rui N. [University of Aveiro (Portugal); Wiggers, Hartmut [Institut fuer Verbrennung und Gasdynamik, Universitaet Duisburg-Essen, Duisburg (Germany)

    2010-07-01

    Due to the potential of low-cost solution processing, freestanding silicon nanocrystals (Si-ncs) are a promising base material for application e.g. in photovoltaics, thermoelectric and printable electronics. They can be synthesized in macroscopic amounts with diameters tunable between 4 and 50 nm by microwave-induced decomposition of silane in a low-pressure plasma reactor. In this work, we investigate different cost-efficient post-growth methods to reduce the number of silicon dangling bond defects (Si-dbs) which are a limiting factor for many electronic applications. Using electron paramagnetic resonance measurements, it is found that an etching step with hydrofluoric (HF) acid combined with a low-temperature vacuum annealing at 200 C leads to a reduction of the Si-dbs density by a factor of 10. Furthermore, conductivity measurements performed on thin Si-ncs films show that HF etching and annealing also improves the electronic properties. For highly doped Si-ncs, we observe a significant and persistent increase of the room-temperature conductivity. Moreover, current-voltage measurements on Si-ncs/organic semiconductor heterojunction solar cells are presented.

  11. Annealing of GaN under high pressure of nitrogen

    CERN Document Server

    Porowski, S; Kolesnikov, D; Lojkowski, W; Jager, V; Jäger, W; Bogdanov, V; Suski, T; Krukowski, S

    2002-01-01

    Gallium nitride, aluminum nitride and indium nitride are basic materials for blue optoelectronic devices. The essential part of the technology of these devices is annealing at high temperatures. Thermodynamic properties of the Ga-N system and their consequences to application of high nitrogen pressure for the annealing of GaN based materials are summarized. The diffusion of Zn, Mg and Au in high dislocation density heteroepitaxial GaN/Al sub 2 O sub 3 layers will be compared with the diffusion in dislocation-free GaN single crystals and homoepitaxial layers. It will be shown that high dislocation density can drastically change the diffusion rates, which strongly affects the performance of nitride devices. Inter-diffusion of Al, Ga and In in AlGaN/GaN and InGaN/GaN quantum well (QW) structures will be also considered. It will be shown that in contrast to stability of metal contacts, which is strongly influenced by dislocations, the inter-diffusion of group III atoms in QW structures is not affected strongly by...

  12. Microstructure evolution of hot-rolled ODS steel during annealing

    International Nuclear Information System (INIS)

    Oxide Dispersion strengthened (ODS) steels have a great potential for high burn-up and high temperature applications. General requirements for cladding material are high resistances to irradiation-induced embrittlement, void swelling, and creep, as well as a good compatibility with the molten sodium. Creep resistance at high temperature is closely related to thermal stability of microstructure, and is also affected by crystallographic texture that developed during the thermo-mechanical processes. In general, fine grain structure impairs creep resistance and strong texture leads to mechanical anisotropy. The present work investigates effects of oxide particles on thermal stability of microstructure and texture of ferritic ODS steel. For this purpose, Fe-15Cr base ferritic steel and its ODS counterpart were produced based on powder metallurgy and their microstructure were compared. The oxide particles in 15Cr ODS steel are stable at annealing temperatures up to 1200 .deg. C. However, further increase in annealing temperature results in dissolution and coarsening of oxides particles, which in turn leads to rapid growth of grains. Therefore, it is concluded that the ODS steel should be processed at temperature below 1200 .deg. C to avoid dissolution and coarsening of finely-dispersed oxide particles, and thereby to minimize loss of strength

  13. Effects of Annealing on Microstructure and Microstrength of Metallurgical Coke

    Science.gov (United States)

    Xing, Xing; Zhang, Guangqing; Rogers, Harold; Zulli, Paul; Ostrovski, Oleg

    2013-12-01

    Two metallurgical cokes were heat treated at 1673 K to 2273 K (1400 °C to 2000 °C) in a nitrogen atmosphere. The effect of heat treatment on the microstructure and microstrength of metallurgical cokes was characterized using X-ray diffraction, Raman spectroscopy, and ultra-microindentation. In the process of heat treatment, the microstructure of the metallurgical cokes transformed toward the graphite structure. Raman spectroscopy of reactive maceral-derived component (RMDC) and inert maceral-derived component (IMDC) indicated that the graphitisation degree of the RMDC was slightly lower than that of the IMDC in the original cokes; however graphitisation of the RMDC progressed faster than that of the IMDC during annealing, and became significantly higher after annealing at 2273 K (2000 °C). The microstrength of cokes was significantly degraded in the process of heat treatment. The microstrength of the RMDC was lower, and of its deterioration caused by heat treatment was more severe than IMDC. The degradation of the microstrength of cokes was attributed to their increased graphitisation degree during the heat treatment.

  14. Enhanced regeneration of degraded polymer solar cells by thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Pankaj, E-mail: pankaj@mail.nplindia.ernet.in [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308 (Australia); Bilen, Chhinder; Zhou, Xiaojing; Belcher, Warwick J.; Dastoor, Paul C., E-mail: Paul.Dastoor@newcastle.edu.au [Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308 (Australia); Feron, Krishna [Centre for Organic Electronics, Physics, University of Newcastle, Callaghan NSW-2308 (Australia); CSIRO Energy Technology, P. O. Box 330, Newcastle NSW 2300 (Australia)

    2014-05-12

    The degradation and thermal regeneration of poly(3-hexylethiophene) (P3HT):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM) and P3HT:indene-C{sub 60} bisadduct (ICBA) polymer solar cells, with Ca/Al and Ca/Ag cathodes and indium tin oxide/poly(ethylene-dioxythiophene):polystyrene sulfonate anode have been investigated. Degradation occurs via a combination of three primary pathways: (1) cathodic oxidation, (2) active layer phase segregation, and (3) anodic diffusion. Fully degraded devices were subjected to thermal annealing under inert atmosphere. Degraded solar cells possessing Ca/Ag electrodes were observed to regenerate their performance, whereas solar cells having Ca/Al electrodes exhibited no significant regeneration of device characteristics after thermal annealing. Moreover, the solar cells with a P3HT:ICBA active layer exhibited enhanced regeneration compared to P3HT:PCBM active layer devices as a result of reduced changes to the active layer morphology. Devices combining a Ca/Ag cathode and P3HT:ICBA active layer demonstrated ∼50% performance restoration over several degradation/regeneration cycles.

  15. Helium Behaviour in Waste Conditioning Matrices during Thermal Annealing

    Energy Technology Data Exchange (ETDEWEB)

    Wiss, Thierry A.; Hiernaut, J-P; Damen, P; Lutique, Stphanie; Fromknecht, R; Weber, William J.

    2006-06-30

    Reprocessing of spent fuel produces high level waste including minor actinides and long living fission products that might be disposed in waste conditioning matrices. Several natural mineral phases were proven to be able to incorporate fission products or actinides in their crystalline structure for long periods of time. In this study, synthetic compounds of zirconolite (CaZrTi2O7) and pyrochlores (Gd2Ti2O7 and Nd2Zr2O7) were fabricated and doped with the short-lived alpha-emitter 244Cm to increase the total amount of helium and damage generated in a laboratory time scale. Helium implantations were also used to simulate the damage caused by the alpha-decay and the build-up of helium in the matrix. The samples were annealed in a Knudsen cell, and the helium release profile interpreted in conjunction with radiation damage studies and previous analysis of annealing behaviour. Several processes like diffusion, trapping or phase changes could then be attributed to the helium behaviour depending on the material considered. Despite high damage and large amount of helium accumulated, the integrity of the studied materials was preserved during storage.

  16. Helium behaviour in waste conditioning matrices during thermal annealing

    Science.gov (United States)

    Wiss, T. A. G.; Hiernaut, J.-P.; Damen, P. M. G.; Lutique, S.; Fromknecht, R.; Weber, W. J.

    2006-06-01

    Reprocessing of spent fuel produces high level waste including minor actinides and long living fission products that might be disposed in waste conditioning matrices. Several natural mineral phases were proven to be able to incorporate fission products or actinides in their crystalline structure for long periods of time. In this study, synthetic compounds of zirconolite (CaZrTi2O7) and pyrochlores (Gd2Ti2O7 and Nd2Zr2O7) were fabricated and doped with the short-lived alpha-emitter 244Cm to increase the total amount of helium and damage generated in a laboratory time scale. Helium implantations were also used to simulate the damage caused by the alpha-decay and the build-up of helium in the matrix. The samples were annealed in a Knudsen cell, and the helium release profile interpreted in conjunction with radiation damage studies and previous analysis of annealing behaviour. Several processes like diffusion, trapping or phase changes could then be attributed to the helium behaviour depending on the material considered. Despite high damage and large amount of helium accumulated, the integrity of the studied materials was preserved during storage.

  17. Driver Hamiltonians for constrained optimization in quantum annealing

    Science.gov (United States)

    Hen, Itay; Sarandy, Marcelo S.

    2016-06-01

    One of the current major challenges surrounding the use of quantum annealers for solving practical optimization problems is their inability to encode even moderately sized problems, the main reason for this being the rigid layout of their quantum bits as well as their sparse connectivity. In particular, the implementation of constraints has become a major bottleneck in the embedding of practical problems, because the latter is typically achieved by adding harmful penalty terms to the problem Hamiltonian, a technique that often requires an all-to-all connectivity between the qubits. Recently, a novel technique designed to obviate the need for penalty terms was suggested; it is based on the construction of driver Hamiltonians that commute with the constraints of the problem, rendering the latter constants of motion. In this work we propose general guidelines for the construction of such driver Hamiltonians given an arbitrary set of constraints. We illustrate the broad applicability of our method by analyzing several diverse examples, namely, graph isomorphism, not-all-equal three-satisfiability, and the so-called Lechner-Hauke-Zoller constraints. We also discuss the significance of our approach in the context of current and future experimental quantum annealers.

  18. Microstructural, Structural, and Thermal Characterization of Annealed Carbon Steels

    Science.gov (United States)

    Lara-Guevara, A.; Ortiz-Echeverri, C. J.; Rojas-Rodriguez, I.; Mosquera-Mosquera, J. C.; Ariza-Calderón, H.; Ayala-Garcia, I.; Rodriguez-García, M. E.

    2016-10-01

    As is well known, the metallurgical microstructure of carbon steel is formed by ferrite and pearlite after the annealing heat treatment. When the cooling rate increases, the diffusive process is interrupted causing a change in the metallurgical microstructure which will affect steel properties. The aim of this work was to study thermal, structural, and microstructural properties of annealed carbon steel samples with four different carbon contents. Crystalline structure and crystalline quality were studied by the X-ray diffraction technique, where the full width at half maximum analysis showed that as the carbon content increased, the crystalline quality decreased. The metallurgical microstructure morphology was studied by scanning electron microscopy. The thermal diffusivity and the heat capacity were determined by the photoacoustic technique and by the thermal relaxation method, respectively. The thermal diffusivity and the thermal conductivity decreased as the carbon content increased. The amplitude signal of photothermal radiometry increased as the carbon content increased, while the phase signal of photothermal radiometry did not show significant differences among studied carbon steel types. The photoacoustic technique represents an important alternative in the steel characterization field.

  19. Simulated Annealing-Based Krill Herd Algorithm for Global Optimization

    Directory of Open Access Journals (Sweden)

    Gai-Ge Wang

    2013-01-01

    Full Text Available Recently, Gandomi and Alavi proposed a novel swarm intelligent method, called krill herd (KH, for global optimization. To enhance the performance of the KH method, in this paper, a new improved meta-heuristic simulated annealing-based krill herd (SKH method is proposed for optimization tasks. A new krill selecting (KS operator is used to refine krill behavior when updating krill’s position so as to enhance its reliability and robustness dealing with optimization problems. The introduced KS operator involves greedy strategy and accepting few not-so-good solutions with a low probability originally used in simulated annealing (SA. In addition, a kind of elitism scheme is used to save the best individuals in the population in the process of the krill updating. The merits of these improvements are verified by fourteen standard benchmarking functions and experimental results show that, in most cases, the performance of this improved meta-heuristic SKH method is superior to, or at least highly competitive with, the standard KH and other optimization methods.

  20. Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs

    International Nuclear Information System (INIS)

    The paper presents results of isothermal and isochronal annealing experiments on several types of gamma-ray irradiated commercial N- and P-channel power VDMOSFETs. Transistors were characterized for their threshold voltage shift and densities of radiation-induced oxide-trap charge and interface traps. The results show that the temperature enhances interface trap formation and oxide-trap charge decay rates, but also contributes to the passivation of interface traps. The study demonstrates that formation and passivation of interface traps are simultaneous processes. At certain conditions (lower temperature and/or positive bias) interface-trap formation dominates. Oppositely, at other conditions (higher temperature and/or negative bias) passivation is predominant. However at some conditions there is a complex interplay between formation and passivation of interface traps, resulting in interface traps increase followed by decrease at later annealing times. No model for interface trap post-irradiation behavior can explain this effect better than the recently proposed H-W model

  1. Microplastic processes developed in pure Ag with mesoscale annealing twins

    Energy Technology Data Exchange (ETDEWEB)

    Al-Fadhalah, Khaled Jabr Hasan [Mechanical Engineering Department, College of Engineering and Petroleum, Kuwait University, P.O. Box 5969, Safat 13060 (Kuwait)], E-mail: fadhalah@kuc01.kuniv.edu.kw; Li, Chun-Ming [Alcan Rolled Products-Ravenswood, LLC. P.O. Box 68, Century Road, Ravenswood, WV 26164 (United States)], E-mail: chun-ming.li@alcan.com; Beaudoin, A.J. [Department of Mechanical Science and Engineering, University of Illinois, 1206 West Green Street, Urbana, IL 61801 (United States)], E-mail: abeaudoi@uiuc.edu; Korzekwa, D.A. [Los Alamos National Laboratory, P.O. Box 1663, Los Alamos, NM 87545 (United States); Robertson, I.M. [Department of Materials Science and Engineering, University of Illinois, 1304 W. Green Street, Urbana, IL 61801 (United States)], E-mail: ianr@uiuc.edu

    2008-11-15

    The impact of annealing twin boundaries with a high residual defect content on the mechanical response of polycrystalline fine- and coarse-grained (2 and 20 {mu}m) silver was investigated through transmission electron microscopy and modeling. Besides an increase in the yield strength, the fine-grained material exhibited an inflection in the stress-strain curve after initial yield. Static and dynamic TEM studies revealed that the annealing twin boundaries acted as sources of perfect dislocations, partial dislocations and deformation twins; as barriers to the propagation of these dislocations; and as annihilation sites for dislocations. With increasing strain and as the twin boundaries were penetrated by dislocations, they contributed less to the overall mechanical properties. Based on these observations, equations for the evolution of mobile and forest dislocation densities are posed, depicting boundary sources and dislocation-dislocation interactions, respectively. The deformation response is modeled by computing the aggregate response of matrix-twin composite grains in the viscoplastic self-consistent scheme, which permits consideration of compatibility and equilibrium requirements across the twin boundaries. This work highlights the significant role boundaries play in generating the dislocations that control the macroscopic mechanical response.

  2. Effect of annealing on the thermal properties of poly (lactic acid)/starch blends.

    Science.gov (United States)

    Lv, Shanshan; Gu, Jiyou; Cao, Jun; Tan, Haiyan; Zhang, Yanhua

    2015-03-01

    A comparative study of the thermal behavior of PLA/starch blends annealed at different temperatures has been conducted. Annealing was found to be beneficial to weaken and even eliminate the enthalpy relaxation near Tg. The degree of crystallinity was evaluated by means of DSC, and the results showed that the crystallinity of the samples increased as the annealing temperatures were increased. It was observed that, during the annealing process, the disorder α (α') crystal modification tended to transform into the order α crystal modification. All of the PLA/starch blends showed a double melting behavior. With the increase of annealing temperatures, the lower Tm1 increased, while the Tm2 showed no evident change. The XRD patterns also showed that annealing was beneficial to the samples to form higher crystallinity. The TGA results indicated that the annealed samples did not show any higher thermal stability than the virgin samples. The activation energy calculated by the Flynn-Wall-Ozawa method at lower conversion degrees confirmed that the annealing slightly slowed the degradation. The activation energy did not show any dependence on the conversion degree, which indicated that there existed a complex degradation process of the PLA/starch blends. The average activation energy did not show obvious differences, indicating that the annealing treatment had little influence on the degradation activation energy.

  3. Surface Segregation of B During Box Annealing of ConCast Steels

    Science.gov (United States)

    Biber, H. E.; Hudson, R. M.

    1987-03-01

    In this study, significant surface concentrations of boron and nitrogen (presumably present as boron nitride) were observed in Auger electron spectrometry (AES) analysis of steels that were continuously cast with a mold flux containing boron oxide and commercially box annealed with dry H2-N2 atmospheres. A review of the thermochemistry of boron in steel suggested that the surface enrichment in boron and nitrogen occurs by a reaction during annealing in dry atmospheres. Laboratory annealing trials demonstrated the effectiveness of high dew point H2-N2 annealing atmospheres in suppressing that reaction. AES analysis indicates that the surface enrichment is not uniform and may be a function of surface grain orientation.

  4. Influence of annealing treatment on microstructure and properties of cold sprayed stainless steel coatings

    Institute of Scientific and Technical Information of China (English)

    Xianming MENG; Junbao ZHANG; Jie ZHAO; Wei HAN; Yongli LIANG

    2011-01-01

    304 stainless steel coatings had been deposited on carbon-steel substrate by cold spray technique, vacuum annealing treatment was applied to the coatings with different temperatures, and the influence of annealing treatment on the microstructure and electrochemical behavior of the coatings in 3.5% NaCl were analyzed. The results indicated that, the cold sprayed coating was constituted by the flattened particles, and the interfaces were clearly observed between the deposited particles. It was also found that annealing treatment led to the recovery and recrystallization of the elongated grains in the as-sprayed coatings with the increase of annealing temperature.When the annealing temperature achieved to 950 ℃, the interface of particles was disappeared and the coating's structure was made of new recrystallization anstenite grains. Annealing treatment increased the potential volts, and reduced the corrosion rate with the increase of annealing temperature. The electrical corrosion morphology indicated that, the corrosion was firstly at the distortion area and the crevice corrosion mechanism played an important part. Based on these results, processes active during annealing treatment are kinetically dependent and strongly influenced by the annealing treatment temperature.

  5. FEM analysis of large thermo-deflection of strips being processed in a continuous annealing furnace

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    No matter what the flatness of a strip is, flat or defective, at an annealing furnace entrance, the strip can not keep its original shape and a remarkable change of its shape can be seen at the annealing furnace exit. By inves tigating this phenomenon at the 2030 mm continuous annealing line which belonged to Baosteel, a finite element model of thermo-mechanical buckling deformation of strips in a continuous annealing furnace were established, and the mechanism of flatness changing and the contributing factors were researched by the finite element software ANSYS.

  6. Influence of recrystallization annealing on the cube texture in high-purity aluminum foils

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, X.M.; Tang, J.G.; Du, Y.X.; Zhou, Z.P.; Chen, Z.Y.; Liu, C.M. [Dept. of Materials Science and Engineering, Central South Univ., HN (China)

    2001-07-01

    The cube texture in high-purity aluminum foils under different annealing conditions was investigated by means of orientation distribution function (ODF) and microscopy. It was shown that low recrystallization temperature was favorable to the nucleation of cube orientation and to the growth of the cube nuclei, and that stronger cube texture was obtained by multistage annealing than by single one. The strongest cube texture in high purity aluminum foils annealed in two-stage in the vacuum was obtained. It demonstrated that the recrystallization behavior was controlled by the existing state of Fe in aluminum. A model of multistage annealing was proposed for development of strong cube texture with temperature. (orig.)

  7. Optical, Electrical and Raman Properties of Annealed Hydrogenated Mg/Co Bilayer Thin Films

    Directory of Open Access Journals (Sweden)

    M. Singh

    2011-01-01

    Full Text Available Bilayer Mg/Co thin films prepared using thermal evaporation method at pressure 10 – 5 torr at room temperature. The films were rapid thermal annealed (RTA using halogen lamp for different times to get a homogeneous structure of Mg/Co thin films. The hydrogen gas was introduced in hydrogen chamber, where samples were kept at different pressure of H2 for thirty minutes. The UV–VIS transmission spectra of annealed and annealed hydrogenated films have been carried out at room temperature in the wavelength range of 300-800 nm. The optical band gap was found to be increased due to hydrogenation and decrease with annealing time and also conductivity has been found to be decreased with hydrogen and increased with annealing time. Raman spectra show decreasing intensity of peaks with annealing and hydrogenation. Relative resistivity varies nonlinearly with time and decreases with annealing time. Surface morphology of annealed and annealed hydrogenated bilayer thin films has been confirmed by optical microscopy.

  8. Effects of annealing on the structure and photoluminescence of ZnO-sputtered coaxial nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyoun Woo, E-mail: hwkim@inha.ac.k [Division of Materials Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of); Kebede, Mesfin Abayneh; Kim, Hyo Sung; Kong, Myung Ho; Lee, Chongmu [Division of Materials Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of)

    2009-12-15

    We reported the preparation and annealing effects of Zinc oxide ZnO/SiO{sub x} core-shell nanowires, in which ZnO shell layers were deposited by sputtering. Based on scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and photoluminescence (PL) investigations, we monitored structural and optical changes with respect to the post-annealing process. The samples were mostly amorphous with some crystalline ZnO structure, whereas annealing at 900-1000 deg. C reduced the amount of Zn elements. Thermal annealing induced change in the shape of the PL emission spectra.

  9. Annealing to reduce scattering centers in Czochralski-grown beta-BaB2O4.

    Science.gov (United States)

    Kouta, H; Kuwano, Y

    1999-02-20

    When a visible laser beam passes through beta-BaB(2)O(4) (BBO), scattered light can be observed along the beam within the crystal. Scattering centers caused by structural defects in Czochralski-grown BBO can be reduced by 95% by annealing at 920 degrees C. In the flux-grown BBO, centers actually increase by the same annealing because the process causes microcracks and/or secondary inclusions. It is shown that annealed Czochralski-grown BBO is superior to flux-grown BBO (annealed or as-grown) in terms of optical loss.

  10. Annealing of GaAs solar cells damaged by electron irradiation

    Science.gov (United States)

    Walker, G. H.; Conway, E. J.

    1978-01-01

    Measurements of thermal annealing of GaAlAs/GaAs solar cells damaged by 1 MeV electron irradiation are reported, and the magnitude of the short-circuit current recovery is discussed. The damaged cells are annealed in a vacuum at 200 C. A cell irradiated at 10 to the 13th power electrons per sq cm recovers all its lost short-circuit current after 15 hours of annealing. Possible application of the annealing process to solar cells in space is also considered.

  11. Annealing to reduce scattering centers in Czochralski-grown beta-BaB2O4.

    Science.gov (United States)

    Kouta, H; Kuwano, Y

    1999-02-20

    When a visible laser beam passes through beta-BaB(2)O(4) (BBO), scattered light can be observed along the beam within the crystal. Scattering centers caused by structural defects in Czochralski-grown BBO can be reduced by 95% by annealing at 920 degrees C. In the flux-grown BBO, centers actually increase by the same annealing because the process causes microcracks and/or secondary inclusions. It is shown that annealed Czochralski-grown BBO is superior to flux-grown BBO (annealed or as-grown) in terms of optical loss. PMID:18305712

  12. Effects of Rapid Cycle Annealing Temperature on TbFe Magnetostrictive Films

    Institute of Scientific and Technical Information of China (English)

    JIANG Hong-Chuan; ZHANG Jin-Ping; ZHANG Wan-Li; PENG Bin; ZHANG Wen-Xu; YANG Shi-Qing; ZHANG Huai-Wu

    2004-01-01

    @@ The effects of annealing temperature on TbFe films prepared by dc magnetron sputtering were discussed. X-ray diffraction patterns indicate that these polycrystalline films consisting mainly of α-Fe and TbFe2 lave phase with grain sizes less than 25 nm can be obtained by a rapid cycle annealing process. Grain sizes can be controlled by varying annealing temperatures. Film hysteresis loop studies show that annealing treatment can improve TbFe film in-plane soft magnetic performances.

  13. SAIL: A CUDA-based implementation of the simulated annealing for the inverse Laplace transform problem

    CERN Document Server

    Lutsyshyn, Yaroslav

    2016-01-01

    We developed a CUDA-based parallelization of the annealing method for the inverse Laplace transform problem. The algorithm is based on annealing algorithm and minimizes residue of the reconstruction of the spectral function. We introduce local updates which preserve first two sum rules and allow an efficient parallel CUDA implementation. Annealing is performed with the Monte Carlo method on a population of Markov walkers. We propose imprinted branching method to improve further the convergence of the anneal. The algorithm is tested on truncated double-peak Lorentzian spectrum with examples of how the error in the input data affects the reconstruction.

  14. Annealing Polymer Nanocomposite Fibers and Films Via Photothermal Heating: Effects On Overall Crystallinity and Morphology

    Science.gov (United States)

    Viswanath, Vidya

    Metal nanoparticles embedded within polymeric systems can act as localized heat sources, facilitating in situ polymer processing. When irradiated with light resonant with the nanoparticle's surface plasmon resonance (SPR), a non-equilibrium electron distribution is generated which rapidly transfers energy into the surrounding medium, resulting in a temperature increase in the immediate region around the particle. This work compares the utility of such photothermal heating versus traditional heating in two different polymeric media i.e. gold nanospheres/poly (ethylene oxide) (AuNP:PEO) nanocomposite films and electrospun nanofibers. Subsequently, a brief study on the usage of gold nanorods (AuNR) to anneal polymeric nanofibers and films has also been presented. Effect of annealing by conventional and photothermal methods has been studied for AuNP:PEO films crystallized from solution and the melt, which have been annealed at average sample temperatures above the glass transition and below the melting point. For all temperatures, photothermally annealed samples reached maximum crystallinity and maximum spherulite size at shorter annealing times. Percentage crystallinity change under conventional annealing was analyzed using time-temperature superposition (TTS). Comparison of the TTS data with results from photothermal experiments enabled determination of an "effective dynamic temperature" achieved under photothermal heating which is significantly higher than the average sample temperature. Thus, the heterogeneous temperature distribution created when annealing with the plasmon-mediated photothermal effect represents a unique tool to achieve processing outcomes that are not accessible via traditional annealing. In addition, the effect of annealing AuNP:PEO electrospun nanofibrous composites via conventional and photothermal annealing has also been studied. From the studies, it was observed that not only is the maximum crystallinity achieved more quickly when the

  15. Annealing induced recrystallization of radiation damaged titanite and allanite

    International Nuclear Information System (INIS)

    in the titanite structure. Hence, the planes containing Si-O-Ti-O bond rings are less susceptible to a self-accumulation of radiation-induced defects resulting in the development of amorphous regions as compared to the perpendicular plane containing Ti-O bond chains. Multistep annealing gradually suppresses the structural defects in the crystalline fraction of the titanite as the improvement of the SiO4-TiO6 connectivity within planes near perpendicular to the TiO6 chains reaches saturation near 900 K. Annealing-induced recrystallization of the radiation-induced amorphous nanoregions takes place in the temperature range between approximately 650 and 950 K, with a maximum near 750 K. To determine the influence of radiation damage on the behavior of the elastic material properties of titanite, nanoindentation measurements were performed on partially metamict titanite (sample E2312) and for comparison additionally on nearly undamaged crystalline titanite (Rauris sample) and titanite glass. Metamict titanite E2312 shows hardness (H) and elastic modulus (E) values close to those of titanite glass. Rauris titanite shows strong anisotropy and the H and E values are clearly larger than those of E2312. Thermally induced stepwise recrystallization of metamict titanite E2312 leads to a decrease in the hardness until approximately 950 K and afterwards to an increase at higher temperatures, while the elastic modulus increases continuously (H and E values measured always at room temperature). Changes of the hardness and elastic modulus are related to increasing long-range order and vanishing amorphous interface areas in the titanite structure. In further studies the structural recovery of the metamict epidot group mineral allanite (sample number R1) produced by thermal annealing was followed by powder X-ray diffraction, single-crystal synchrotron X-ray diffraction and infrared spectroscopy. Allanite contains in contrast to titanite structural OH groups. But no evidences for a

  16. Two- and multi-step annealing of cereal starches in relation to gelatinization.

    Science.gov (United States)

    Shi, Yong-Cheng

    2008-02-13

    Two- and multi-step annealing experiments were designed to determine how much gelatinization temperature of waxy rice, waxy barley, and wheat starches could be increased without causing a decrease in gelatinization enthalpy or a decline in X-ray crystallinity. A mixture of starch and excess water was heated in a differential scanning calorimeter (DSC) pan to a specific temperature and maintained there for 0.5-48 h. The experimental approach was first to anneal a starch at a low temperature so that the gelatinization temperature of the starch was increased without causing a decrease in gelatinization enthalpy. The annealing temperature was then raised, but still was kept below the onset gelatinization temperature of the previously annealed starch. When a second- or third-step annealing temperature was high enough, it caused a decrease in crystallinity, even though the holding temperature remained below the onset gelatinization temperature of the previously annealed starch. These results support that gelatinization is a nonequilibrium process and that dissociation of double helices is driven by the swelling of amorphous regions. Small-scale starch slurry annealing was also performed and confirmed the annealing results conducted in DSC pans. A three-phase model of a starch granule, a mobile amorphous phase, a rigid amorphous phase, and a crystalline phase, was used to interpret the annealing results. Annealing seems to be an interplay between a more efficient packing of crystallites in starch granules and swelling of plasticized amorphous regions. There is always a temperature ceiling that can be used to anneal a starch without causing a decrease in crystallinity. That temperature ceiling is starch-specific, dependent on the structure of a starch, and is lower than the original onset gelatinization of a starch.

  17. Effects of different annealing atmospheres on the properties of cadmium sulfide thin films

    International Nuclear Information System (INIS)

    Graphical abstract: The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. - Highlights: • Compactness and smoothness of the films were enhanced after sulfur annealing. • Micro-strain values of some films were improved after sulfur annealing. • Dislocation density values of some films were improved after sulfur annealing. • Band gap values of the films were improved after sulfur annealing. - Abstract: Cadmium sulfide (CdS) thin films were prepared on glass substrates by using chemical bath deposition (CBD) technique. The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. Compactness and smoothness of the films (especially for pH 10.5 and 11) enhanced after sulfur annealing. pH value of the precursor solution remarkably affected the roughness, uniformity and particle sizes of the films. Based on the analysis of X-ray diffraction (XRD) patterns of the films, micro-strain and dislocation density values of the sulfur-annealed films (pH 10.5 and 11) were found to be lower than those of air-annealed films. Air-annealed films (pH 10.5, 11 and 11.5) exhibited higher transmittance than sulfur-annealed films in the wavelength region of 550–800 nm. Optical band gap values of the films were found between 2.31 eV and 2.36 eV

  18. Controlled fabrication of Si nanostructures by high vacuum electron beam annealing

    Science.gov (United States)

    Fang, F.; Markwitz, A.

    2009-10-01

    Silicon nanostructures, called Si nanowhiskers, have been successfully synthesized on Si(1 0 0) substrate by high vacuum electron beam annealing (EBA). Detailed analysis of the Si nanowhisker morphology depending on annealing temperature, duration and the temperature gradients applied in the annealing cycle is presented. A correlation was found between the variation in annealing temperature and the nanowhisker height and density. Annealing at 935 °C for 0 s, the density of nanowhiskers is about 0.2 μm -2 with average height of 2.4 nm grow on a surface area of 5×5 μm, whereas more than 500 nanowhiskers (density up to 28 μm -2) with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 °C for 0 s. At a cooling rate of -50 °C s -1 during the annealing cycle, 10-12 nanowhiskers grew on a surface area of 5×5 μm, whereas close to 500 nanowhiskers grew on the same surface area for samples annealed at the cooling rate of -5 °C s -1. An exponential dependence between the density of Si nanowhiskers and the cooling rate has been found. At 950 °C, the average height of Si nanowhiskers increased from 4.0 to 6.3 nm with an increase of annealing duration from 10 to 180 s. A linear dependence exists between the average height of Si nanowhiskers and annealing duration. Selected results are presented showing the possibility of controlling the density and the height of Si nanowhiskers for improved field emission properties by applying different annealing temperatures, durations and cooling rates.

  19. Post-annealing effects on pulsed laser deposition-grown GaN thin films

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh, E-mail: lincf@ntu.edu.tw

    2015-02-27

    In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular.

  20. Laser annealing of plasma-damaged silicon surface

    Energy Technology Data Exchange (ETDEWEB)

    Sameshima, T., E-mail: tsamesim@cc.tuat.ac.jp [Tokyo University of Agriculture and Technology, Tokyo, 184-8588 (Japan); Hasumi, M. [Tokyo University of Agriculture and Technology, Tokyo, 184-8588 (Japan); Mizuno, T. [Kanagawa University, Kanagawa, 259-1293 (Japan)

    2015-05-01

    Highlights: • Ar plasma irradiation caused serious damage at SiO{sub 2}/Si interfaces. • The light induced minority carrier effective lifetime (τ{sub eff}) was decreased to 1.7 × 10{sup −5} s by Ar plasma irradiation. • The density of charge injection type interface traps at 9.1 × 10{sup 11} cm{sup −2} eV{sup −1} was formed. • 940-nm laser irradiation at 3.7 × 10{sup 4} W/cm{sup 2} for 4 × 10{sup −3} s cured the interface. • It increased τ{sub eff} to 1.7 × 10{sup −3} s and decreased D{sub it} to 2.1 × 10{sup 10} cm{sup −2} eV{sup −1}. - Abstract: 13.56 MHz capacitance coupled Ar plasma irradiation at 50 W for 120 s caused serious damage at SiO{sub 2}/Si interfaces for n-type 500-μm-thick silicon substrates. The 635-nm-light induced minority carrier effective lifetime (τ{sub eff}) was decreased from 1.7 × 10{sup −3} (initial) to 1.0 × 10{sup −5} s by Ar plasma irradiation. Moreover, the capacitance response at 1 MHz alternative voltage as a function of the bias voltage (C–V) was changed to hysteresis characteristic associated with the density of charge injection type interface traps at the mid gap (D{sub it}) at 9.1 × 10{sup 11} cm{sup −2} eV{sup −1}. Subsequent 940-nm laser annealing at 3.7 × 10{sup 4} W/cm{sup 2} for 4.0 × 10{sup −3} s markedly increased τ{sub eff} to 1.7 × 10{sup −3} s and decreased D{sub it} to 2.1 × 10{sup 10} cm{sup −2} eV{sup −1}. The hysteresis phenomenon was reduced in C–V characteristics. Laser annealing effectively decreased the density of plasma induced carrier recombination and trap states. However, laser annealing with a high power intensity of 4.0 × 10{sup 4} W/cm{sup 2} seriously caused a thermal damage associated with a low τ{sub eff} and a high D{sub it} with no hysteresis characteristic.

  1. Comparative studies of laser annealing technique and furnace annealing by X-ray diffraction and Raman analysis of lithium manganese oxide thin films for lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Pröll, J., E-mail: johannes.proell@kit.edu [Karlsruhe Institute of Technology, Institute for Applied Materials (IAM-AWP), P.O. Box 3640, 76021 Karlsruhe (Germany); Weidler, P.G. [Karlsruhe Institute of Technology, Institute of Functional Interfaces (IFG), P.O. Box 3640, 76021 Karlsruhe (Germany); Kohler, R.; Mangang, A. [Karlsruhe Institute of Technology, Institute for Applied Materials (IAM-AWP), P.O. Box 3640, 76021 Karlsruhe (Germany); Heißler, S. [Karlsruhe Institute of Technology, Institute of Functional Interfaces (IFG), P.O. Box 3640, 76021 Karlsruhe (Germany); Seifert, H.J. [Karlsruhe Institute of Technology, Institute for Applied Materials (IAM-AWP), P.O. Box 3640, 76021 Karlsruhe (Germany); Pfleging, W. [Karlsruhe Institute of Technology, Institute for Applied Materials (IAM-AWP), P.O. Box 3640, 76021 Karlsruhe (Germany); Karlsruhe Nano Micro Facility, H.-von-Helmholtz-Platz 1, 76344 Egg.-Leopoldshafen (Germany)

    2013-03-01

    The structure and phase formations of radio frequency magnetron sputtered lithium manganese oxide thin films (Li{sub 1.1}Mn{sub 1.9}O{sub 4}) under ambient air were studied. The influence of laser annealing and furnace annealing, respectively, on the bulk structure and surface phases was compared by using ex-situ X-ray diffraction and Raman analysis. Laser annealing technique formed a dominant (440)-reflection, furnace annealing led to both, (111)- and (440)-reflections within a cubic symmetry (S.G. Fd3m (227)). Additionally, in-situ Raman and in-situ X-ray diffraction were applied for online detection of phase transformation temperatures. In-situ X-ray diffraction measurements clearly identified the starting temperature for the (111)- and (440)-reflections around 525 °C and 400 °C, respectively. The 2θ Bragg peak positions of the characteristic (111)- and (440)-reflections were in good agreement with those obtained through conventional furnace annealing. Laser annealing of lithium manganese oxide films provided a quick and efficient technique and delivered a dominant (440)-reflection which showed the expected electrochemical behavior of the well-known two-step de-/intercalation process of lithium-ions into the cubic spinel structure within galvanostatic testing and cyclic voltammetry. - Highlights: ► Formation of cubic spinel-like phase of Li–Mn–O thin films by rapid laser annealing ► Laser annealing at 680 °C and 100 s was demonstrated as quick crystallization method. ► 400 °C was identified as characteristic onset temperature for (440)-reflex formation.

  2. Maximum-Entropy Inference with a Programmable Annealer

    CERN Document Server

    Chancellor, Nicholas; Vinci, Walter; Aeppli, Gabriel; Warburton, Paul A

    2015-01-01

    Optimisation problems in science and engineering typically involve finding the ground state (i.e. the minimum energy configuration) of a cost function with respect to many variables. If the variables are corrupted by noise then this approach maximises the likelihood that the solution found is correct. An alternative approach is to make use of prior statistical information about the noise in conjunction with Bayes's theorem. The maximum entropy solution to the problem then takes the form of a Boltzmann distribution over the ground and excited states of the cost function. Here we use a programmable Josephson junction array for the information decoding problem which we simulate as a random Ising model in a field. We show experimentally that maximum entropy decoding at finite temperature can in certain cases give competitive and even slightly better bit-error-rates than the maximum likelihood approach at zero temperature, confirming that useful information can be extracted from the excited states of the annealing...

  3. Optimal placement of excitations and sensors by simulated annealing

    Science.gov (United States)

    Salama, Moktar; Bruno, R.; Chen, G.-S.; Garba, J.

    1989-01-01

    The optimal placement of discrete actuators and sensors is posed as a combinatorial optimization problem. Two examples for truss structures were used for illustration; the first dealt with the optimal placement of passive dampers along existing truss members, and the second dealt with the optimal placement of a combination of a set of actuators and a set of sensors. Except for the simplest problems, an exact solution by enumeration involves a very large number of function evaluations, and is therefore computationally intractable. By contrast, the simulated annealing heuristic involves far fewer evaluations and is best suited for the class of problems considered. As an optimization tool, the effectiveness of the algorithm is enhanced by introducing a number of rules that incorporate knowledge about the physical behavior of the problem. Some of the suggested rules are necessarily problem dependent.

  4. Simulated Annealing Algorithm and Its Application in Irregular Polygons Packing

    Institute of Scientific and Technical Information of China (English)

    段国林; 王彩红; 张健楠

    2003-01-01

    Two-dimensional irregular polygons packing problem is very difficult to be solved in traditional optimal way.Simulated annealing(SA)algorithm is a stochastic optimization technique that can be used to solve packing problems.The whole process of SA is introduced firstly in this paper. An extended neighborhood searching method in SA is mainly analyzed. A general module of SA algorithm is given and used to lay out the irregular polygons. The judgment of intersection and other constrains of irregular polygons are analyzed. Then an example that was used in the paper of Stefan Jakobs is listed.Results show that this SA algorithm shortens the computation time and improves the solution.

  5. Stochastic annealing simulations of defect interactions among subcascades

    Energy Technology Data Exchange (ETDEWEB)

    Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States); Singh, B.N.

    1997-04-01

    The effects of the subcascade structure of high energy cascades on the temperature dependencies of annihilation, clustering and free defect production are investigated. The subcascade structure is simulated by closely spaced groups of lower energy MD cascades. The simulation results illustrate the strong influence of the defect configuration existing in the primary damage state on subsequent intracascade evolution. Other significant factors affecting the evolution of the defect distribution are the large differences in mobility and stability of vacancy and interstitial defects and the rapid one-dimensional diffusion of small, glissile interstitial loops produced directly in cascades. Annealing simulations are also performed on high-energy, subcascade-producing cascades generated with the binary collision approximation and calibrated to MD results.

  6. Relaxation of the EM Algorithm via Quantum Annealing

    CERN Document Server

    Miyahara, Hideyuki

    2016-01-01

    The EM algorithm is a novel numerical method to obtain maximum likelihood estimates and is often used for practical calculations. However, many of maximum likelihood estimation problems are nonconvex, and it is known that the EM algorithm fails to give the optimal estimate by being trapped by local optima. In order to deal with this difficulty, we propose a deterministic quantum annealing EM algorithm by introducing the mathematical mechanism of quantum fluctuations into the conventional EM algorithm because quantum fluctuations induce the tunnel effect and are expected to relax the difficulty of nonconvex optimization problems in the maximum likelihood estimation problems. We show a theorem that guarantees its convergence and give numerical experiments to verify its efficiency.

  7. Simulated annealing and joint manufacturing batch-sizing

    Directory of Open Access Journals (Sweden)

    Sarker Ruhul

    2003-01-01

    Full Text Available We address an important problem of a manufacturing system. The system procures raw materials from outside suppliers in a lot and processes them to produce finished goods. It proposes an ordering policy for raw materials to meet the requirements of a production facility. In return, this facility has to deliver finished products demanded by external buyers at fixed time intervals. First, a general cost model is developed considering both raw materials and finished products. Then this model is used to develop a simulated annealing approach to determining an optimal ordering policy for procurement of raw materials and also for the manufacturing batch size to minimize the total cost for meeting customer demands in time. The solutions obtained were compared with those of traditional approaches. Numerical examples are presented. .

  8. Low temperature annealing of cold-drawn pearlitic steel wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Bech, Jakob Ilsted; Hansen, Niels

    2015-01-01

    , the thermal behaviour is of interest. This has been studied by annealing the wires for 1h at temperatures from ambient temperature to 300 ℃ (573 K). It is expected that a raising temperature may lead to structural changes and a reduction in strength. The change in strength is however not expected to be large....... For this reason we have applied a very precise technique to measure the tensile properties of the wires from a strain of 10-4 to the maximum strain of about 1-2%. The structural changes have also been followed to estimate and relate strength changes to changes in structural parameters and morphology.......Cold-drawn pearlitic steel wires are nanostructured and the flow stress at room temperature can reach values above 6 GPa. A typical characteristic of the nanostructured metals, is the low ductility and thermal stability. In order to optimize both the processing and application of the wires...

  9. Enhanced response from field-annealed magnetoelastic strain sensor

    Science.gov (United States)

    Dalponte, Alessandro; Bastos, Eduardo S.; Missell, Frank P.

    2016-08-01

    Magnetoelastic materials permit the development of remote-query strain sensors for use in situations of difficult access. In this work, we examined materials for a remote-query strain sensor based on the ΔE effect. An applied stress modifies the magnetic field produced by a transducer glued to the sample and thereby changes the resonant frequency of a vibrating amorphous ribbon. We considered several amorphous alloys for both the vibrating ribbon and the transducer. To eliminate the casting stress and improve the anisotropy, ribbons were annealed in a transverse magnetic field. This resulted in a dramatic improvement in the sensor performance when sensors were biased above the anisotropy field. For example, a Metglas 2826MB3 ribbon with resonant frequency of 62 kHz showed frequency shifts of up to 5 kHz for a deformation of 0.03%. These results are in good agreement with models for the ΔE effect.

  10. Luminescence sensitivity changes in quartz as a result of annealing

    DEFF Research Database (Denmark)

    Bøtter-Jensen, L.; Agersnap Larsen, N.; Mejdahl, V.;

    1995-01-01

    Retrospective dosimetry using optically stimulated luminescence (OSL) on quartz extracted from (for example) bricks needs to account for strong OSL sensitivity changes that are known to occur depending on the previous thermal treatment of the sample. Non-heated quartz exhibits OSL orders...... of magnitude less per unit radiation than that for heated material. The reason these temperature-induced sensitivity changes occur in quartz is presently not well understood. This phenomenon is also seen in the related area of luminescence dating in which sedimentary quartz and quartz from heated...... archaeological samples show very different OSL sensitivities. In this paper we report on studies of the effect of high temperature annealing on the OSL and phototransferred TL (PTTL) signals from sedimentary and synthetic quartz. A dramatic enhancement of both OSL and PTTL sensitivity was found especially...

  11. Nuclide creation and annealing reactor waste in neutron fields

    International Nuclear Information System (INIS)

    We consider chemical elements in the Universe (their properties and transmutations) as a fuel powering an evolution of stars, galaxies, etc. The nuclear fusion reactions represent an energy source of stars and, in particular, the Sun fitting the life on the Earth. This brings a question on an origin and conditions for creation of life. We discuss some specific features of nuclear reaction chains at the hydrostatic burning of nuclides in stars and treaties for development of thermonuclear fusion reactors at the Earth based environment. The nova and supernova give promising astrophysical site candidates for synthesis of heavy atomic nuclei and renewing other nuclear components. Such an explosive nucleosynthesis yields the actinides containing basic fuel for nuclear fission reactors, among others. We briefly outline the e-, s-, and r-processes while accounting for ultra-strong stellar magnetization, and discuss some ideas for annealing the radioactive toxic nuclear waste

  12. Solving the dynamic berth allocation problem by simulated annealing

    Science.gov (United States)

    Lin, Shih-Wei; Ting, Ching-Jung

    2014-03-01

    Berth allocation, the first operation when vessels arrive at a port, is one of the major container port optimization problems. From both the port operator's and the ocean carriers' perspective, minimization of the time a ship spends at berth is a key goal of port operations. This article focuses on two versions of the dynamic berth allocation problem (DBAP): discrete and continuous cases. The first case assigns ships to a given set of berth positions; the second one permits them to be moored anywhere along the berth. Simulated annealing (SA) approaches are proposed to solve the DBAP. The proposed SAs are tested with numerical instances for different sizes from the literature. Experimental results show that the proposed SA can obtain the optimal solutions in all instances of discrete cases and update 27 best known solutions in the continuous case.

  13. Simulated Annealing Clustering for Optimum GPS Satellite Selection

    Directory of Open Access Journals (Sweden)

    M. Ranjbar

    2012-05-01

    Full Text Available This paper utilizes a clustering approach based on Simulated Annealing (SA method to select optimum satellite subsets from the visible satellites. Geometric Dilution of Precision (GDOP is used as criteria of optimality. The lower the values of the GDOP number, the better the geometric strength, and vice versa. Not needing to calculate the inverse matrix, which is time-consuming process, is a dramatically important advantage of using this method, so a great reduction in computational cost is achieved. SA is a powerful technique to obtain a close approximation to the global optimum for a given problem. The evaluation of the performance of the proposed method is done by validation measures. The external validation measures, entropy and purity, are used to measure the extent to which cluster labels affirm with the externally given class labels. The overall purity and entropy is 0.9015 and 0.3993, respectively which is an excellent result.

  14. Restoration of polarimetric SAR images using simulated annealing

    DEFF Research Database (Denmark)

    Schou, Jesper; Skriver, Henning

    2001-01-01

    Filtering synthetic aperture radar (SAR) images ideally results in better estimates of the parameters characterizing the distributed targets in the images while preserving the structures of the nondistributed targets. However, these objectives are normally conflicting, often leading to a filtering...... approach favoring one of the objectives. An algorithm for estimating the radar cross-section (RCS) for intensity SAR images has previously been proposed in the literature based on Markov random fields and the stochastic optimization method simulated annealing. A new version of the algorithm is presented...... applicable to multilook polarimetric SAR images, resulting in an estimate of the mean covariance matrix rather than the RCS. Small windows are applied in the filtering, and due to the iterative nature of the approach, reasonable estimates of the polarimetric quantities characterizing the distributed targets...

  15. Memoryless cooperative graph search based on the simulated annealing algorithm

    Institute of Scientific and Technical Information of China (English)

    Hou Jian; Yan Gang-Feng; Fan Zhen

    2011-01-01

    We have studied the problem of reaching a globally optimal segment for a graph-like environment with a single or a group of autonomous mobile agents. Firstly, two efficient simulated-annealing-like algorithms are given for a single agent to solve the problem in a partially known environment and an unknown environment, respectively. It shows that under both proposed control strategies, the agent will eventually converge to a globally optimal segment with probability 1Secondly, we use multi-agent searching to simultaneously reduce the computation complexity and accelerate convergence based on the algorithms we have given for a single agent. By exploiting graph partition, a gossip consensus method based scheme is presented to update the key parameter-radius of the graph, ensuring that the agents spend much less time finding a globally optimal segment.

  16. Hydrogen inhibition in steam gasification of annealed Saran char

    Science.gov (United States)

    Lussier, Michael Gerard, Jr.

    1998-12-01

    Annealed Saran and coal chars were gasified in mixtures of H2O/H 2/Ar at 1123 K and varying pressures to varying extents of conversion, followed by transient kinetic desorption and TPD to 1773 K, in order to characterize hydrogen adsorbed onto char surfaces during gasification and to identify the mode(s) of hydrogen inhibition at varying extents of char conversion. Adsorbed hydrogen concentration on annealed Saran char was found to be independent of reactant gas composition and pressure, to increase from an initial surface concentration of 3 x 10-5 to 1.5 x 10 -3 0--3 mmolH2(STP)/m2 over the first 1% conversion, and to increase very gradually after this. Gasification rate declines significantly over the initial 1% carbon conversion and is inhibited mainly by dissociative hydrogen adsorption over this range. Linearized Langmiur-Hinshellwood type rate expressions based on the three primary modes of hydrogen inhibition have been developed for all gasification data above 1% char conversion. The expression which indicates reverse oxygen exchange or "associative" hydrogen adsorption fits the data well, while the expression for dissociative hydrogen adsorption does not. Calculation of the equilibrium constant for oxygen exchange (k1/k-1 = 0.029) indicates a low fractional coverage of adsorbed oxygen complexes (C(O)), while the equilibrium constant for "associative" hydrogen adsorption (k3/k-3 = 425 MPa-1) stipulates a high fractional coverage of "associatively" adsorbed hydrogen. Because no "associatively" bound hydrogen was detected and because low concentrations of surface oxides were found during gasification, it is concluded that reverse oxygen exchange is the primary mode of hydrogen inhibition past 1% char conversion for Saran char. Active site propagation along graphitic zig-zag edges is proposed as the main source of surface carbon consumption for steady-state char gasification in steam.

  17. Effect of annealing on mechanical properties of ledeburitic cast steel

    Directory of Open Access Journals (Sweden)

    E. Rożniata

    2007-01-01

    Full Text Available Purpose: The paper presents evaluation of influence of grain normalization (refinement as a result of repeatedaustenitizing, and the inclination to precipitate the hypereutectoid cementite in Widmannstätten structure inG200CrMoNi4-6-3 cast steel. Four temperatures of heat refining have been applied.Design/methodology/approach: Basic research of G200CrMoNi4-6-3 cast steel included metallographicanalysis, and hardness and impact strength tests. The heat treatment has been planned on the basis of CCTdiagram prepared for that alloy cast steel.Findings: The test material has been G200CrMoNi4-6-3 hypereutectoid cast steel. The evaluation has beencarried out for four annealing temperatures, i.e. 850°C, 900°C, 950°C and 1050°C. At all annealing temperaturesin the structure of cast steel the precipitation of hypereutectoid cementite along grain boundaries of formeraustenite took place. At the temperature of 850°C one may observe the coagulated hypereutectoid cementiteprecipitates inside of primary grains of austenite. Whereas beginning from the temperature of 900°C thecementite in G200CrMoNi4-6-3 cast steel forms distinct „subgrains” inside of primary grains of austenite.Research limitations/implications: Research financed by the Ministry of Scientific Research and InformationTechnology, grant No. 3 T08B 057 29.Practical implications: G200CrMoNi4-6-3 cast steel of ledeburite class is used mainly for rolls production.Any data related to the structure and mechanical properties of that cast steel are precious for the manufacturersand users of the mill rolls.Originality/value: The new heat treatment of G200CrMoNi4-6-3 cast steel

  18. A Simulated Annealing Algorithm for Training Empirical Potential Functions of Protein Folding

    Institute of Scientific and Technical Information of China (English)

    WANG Yu-hong; LI Wei

    2005-01-01

    In this paper are reported the local minimum problem by means of current greedy algorithm for training the empirical potential function of protein folding on 8623 non-native structures of 31 globular proteins and a solution of the problem based upon the simulated annealing algorithm. This simulated annealing algorithm is indispensable for developing and testing highly refined empirical potential functions.

  19. Enhancement of exchange coupling and hard magnetic properties in nanocomposites by magnetic annealing

    International Nuclear Information System (INIS)

    An enhancement of the exchange coupling and hard magnetic properties of melt-spun Nd2Fe14B/α-Fe-type nanocomposites was achieved by optimization of their nanostructured morphology via magnetic annealing. Compared with the Nd2.4Pr5.6Dy1Fe84Mo1B6 sample annealed without a magnetic field, the magnetic annealing results in a noticeable improvement in the coercivity i H c, the remanence 4πMr, and energy product (BH)max. (BH)max at 50 K was enhanced by 43.7% after magnetic annealing in a field of 19 T. The kink in the demagnetization curve disappeared and, additionally, a much better squareness of the demagnetization curves was observed in the magnetically annealed samples. The intergrain exchange coupling was evaluated by Henkel plots. Evidence for stronger intergrain exchange coupling was found in the magnetically annealed sample, which is due to nanostructure refinement promoted by the magnetic annealing. The nanostructure refinement was confirmed by X-ray diffraction, transmission electron microscope, low-temperature demagnetization curves and a modified Brown's equation analysis. The improvement of hard magnetic properties of the magnetically annealed sample results mainly from the magnetic-field-induced exchange-coupling enhancement

  20. Control of optical and electrical properties of ZnO nanocrystals by nanosecond-laser annealing

    Science.gov (United States)

    Shimogaki, T.; Ofuji, T.; Tetsuyama, N.; Kawahara, H.; Higashihata, M.; Ikenoue, H.; Nakamura, D.; Okada, T.

    2014-03-01

    Effects of laser annealing on electrical and optical properties of Zinc oxide (ZnO) nanocrystals, which are expected as building blocks for optoelectronic devices, have been investigated in this study. In the case of fabricating p-n junction in single one-dimensional ZnO nanocrystal, phosphorus-ions implanted p-type ZnO nanocrystals were recrystallized and recovered in the optical properties by nanosecond-laser annealing using a KrF excimer laser. Antimony-doped p-type ZnO nanocrystals were synthesized by irradiating laminated structure which antimony thin film were deposited on ZnO nanocrystals with the laser beam. Additionally, it is possible to control the growth rate of ZnO nanowires by using laser annealing. Irradiating with pulsed laser a part of ZnO buffer layer deposited on the a-cut sapphire substrate, then ZnO nanowires were grown on the ZnO buffer layer by the nanoparticle assisted pulsed laser deposition method. As a result, the clear boundary of the laser annealed and non-laser annealed area was appeared. It was observed that ZnO nanowires were grown densely at non-laser annealed area, on the other hand, sparse ones were grown at the laser-annealed region. In this report, the possibility of laser annealing techniques to establish the stable and reliable fabrication process of ZnO nanowires-based LD and LED are discussed on the basis of experimental results.

  1. Defect evolution and dopant activation in laser annealed Si and Ge

    DEFF Research Database (Denmark)

    Cristiano, F.; Shayesteh, M.; Duffy, R.;

    2016-01-01

    Defect evolution and dopant activation are intimately related to the use of ion implantation and annealing, traditionally used to dope semiconductors during device fabrication. Ultra-fast laser thermal annealing (LTA) is one of the most promising solutions for the achievement of abrupt and highly...

  2. A Knowledge-Based Simulated Annealing Algorithm to Multiple Satellites Mission Planning Problems

    OpenAIRE

    Da-Wei Jin; Li-Ning Xing

    2013-01-01

    The multiple satellites mission planning is a complex combination optimization problem. A knowledge-based simulated annealing algorithm is proposed to the multiple satellites mission planning problems. The experimental results suggest that the proposed algorithm is effective to the given problem. The knowledge-based simulated annealing method will provide a useful reference for the improvement of existing optimization approaches.

  3. UN ALGORITMO DI SIMULATED ANNEALING PER LA SOLUZIONE DI UN PROBLEMA DI SCHEDULING

    OpenAIRE

    Crescenzio Gallo

    2004-01-01

    An algorithm of "Simulated Annealing" for solving scheduling problems is presented. The issues related to scheduling are discussed, together with the Simulated Annealing approximation method and its main parameters (freezing, temperature, cooling, number of neighbourhoods to explore), the choices made in defining them for the generation of a good algorithm that efficiently resolves the scheduling problem.

  4. The HARP domain dictates the annealing helicase activity of HARP/SMARCAL1

    OpenAIRE

    Ghosal, Gargi; Yuan, Jingsong; Chen, Junjie

    2011-01-01

    HARP/SMARCAL1 has a unique annealing helicase activity that is important for the enzyme's function in stabilizing stalled replications forks and facilitating DNA repair. The authors demonstrate here that the conserved tandem HARP domain, and not the SNF2 domain, dictates the annealing helicase activity.

  5. Effect of annealing on properties of Mg doped Zn-ferrite nanoparticles

    Institute of Scientific and Technical Information of China (English)

    K. Nadeemn; S. Rahman; M. Mumtaz

    2015-01-01

    A comparison of structural and magnetic properties of as-prepared and annealed (900 1C) Mg doped Zn ferrite nanoparticles (Zn1 ? xMgxFe2O4, with x ¼ 0, 0.1, 0.2, 0.3, 0.4 and 0.5) is presented. X-ray diffraction (XRD) studies confirmed the cubic spinel structure for both the as-prepared and annealed nanoparticles. The average crystallite size and lattice parameter were increased by annealing. Scanning electron microscopy (SEM) images also showed that the average particle size increased after annealing. Fourier transform infrared spectroscopy (FTIR) also confirmed the spinel structure for both series of nanoparticles. For both annealed and as-prepared nanoparticles, the O–Mtet.–O vibrational band shifts towards higher wave numbers with increased Mg concentration due to cationic rearrangement on the lattice sites. Magnetization studies revealed an anomalous decreasing magnetization for the annealed nanoparticles which is also ascribed to cationic rearrangement on the lattice sites after annealing. The measurement of coercivity showed a decreasing trend by annealing due to the increased nanoparticle size and better crystallinity.&2015 The Authors. Published by Elsevier GmbH. This is an open access article under the CC BY-NC-ND license.

  6. Annealing effect on current perpendicular to plane systems modeled by giant magnetoresistance simulation

    NARCIS (Netherlands)

    Jonkers, PAE

    2001-01-01

    A simulation single-electron model is presented to describe the effect of annealing current perpendicular to plane-giant magnetoresistance (CPP-GMR) systems. Progressive annealing is represented by a progressively increasing number of impurities occurring at the interfaces of adjacent layers constit

  7. Weak convergence rates for stochastic approximation with application to multiple targets and simulated annealing

    OpenAIRE

    Pelletier, Mariane

    1998-01-01

    We study convergence rates of $\\mathbb{R}$-valued algorithms, especially in the case of multiple targets and simulated annealing. We precise, for example, the convergence rate of simulated annealing algorithms, whose weak convergence to a distribution concentrated on the potential's minima had been established by Gelfand and Mitter or by Hwang and Sheu.

  8. Annealing of UV-Induced Birefringence in Hydrogen Loaded Germanosilicate Fibres

    DEFF Research Database (Denmark)

    Canning, John; Deyerl, Hans-Jürgen; Sørensen, Henrik Rokkjær;

    2005-01-01

    UV-reduced birefringence in germanosilicate optical fibres loaded with hydrogen is annealed out at low temperatures (125o C). Annealing for induced birefringence in gratings written by either s or p polarised UV light are identical. The results are incosistent with previous models for the origin of...

  9. Generalized simulated annealing algorithms using Tsallis statistics : Application to the discrete-time optimal growth problem

    OpenAIRE

    稻垣, 陽介; イナガキ, ヨウスケ; Yousuke, Inagaki

    2007-01-01

    The efficiency of Monte Carlo simulated annealing algorithm based on the generalized statistics of Tsallis (GSA) is compared with conventional simulated annealing (CSA) based on Boltzmann-Gibbs statistics. Application to the discrete-time optimal growth problem demonstrates that the replacement of CSA by GSA has the potential to speed up optimizations with no loss of accuracy in finding optimal policy function.

  10. The influence of strain on annealing behaviour of heavily rolled aluminium AA1050

    DEFF Research Database (Denmark)

    Mishin, Oleg; Juul Jensen, Dorte; Hansen, Niels

    2012-01-01

    Deformation structures and annealing behaviour have been analysed in the centre layer of two AA1050 samples cold-rolled to von Mises strains of 3.6 and 6.4. During annealing at 270-300°C structural coarsening and discontinuous recrystallization occurred in both samples. In the coarsened microstru...

  11. Effect of Thermal Annealing on Tribological and Corrosion Properties of DLC Coatings

    Science.gov (United States)

    Wang, Linlin; Nie, X.; Hu, Xin

    2013-10-01

    In this study, the mechanical, tribological, and corrosion properties of annealed diamond-like carbon (DLC) coatings on M2 steel with various annealing temperatures were investigated. The results indicated that DLC coating on M2 steel annealed at 500 °C had the worst performance. Both corrosion polarization resistance and wear resistance against ceramic alumina counterface of DLC coatings decreased with increasing annealing temperature, which can be due to the decline of the coating hardness after the thermal treatment. When sliding against aluminum counterface material, the DLC annealed at 600 °C had the lowest coefficient of friction (cof) and wear resistance due to its high graphitic structure and low hardness. Compared with the original coating, cofs increased for coatings treated at below 300 °C; however, further increasing the annealing temperature led to the decrease of the cofs. Little material attachment occurred between DLC coatings (original and annealed) and counterface materials (both alumina and aluminum balls) except for the DLC annealed at 600 °C, in which coating material transferred to the surface of counterface ball.

  12. 78 FR 31577 - Diffusion-Annealed, Nickel-Plated Flat-Rolled Steel Products From Japan

    Science.gov (United States)

    2013-05-24

    ... Commission, Washington, DC, and by publishing the notice in the Federal Register of April 2, 2013 (78 FR... COMMISSION Diffusion-Annealed, Nickel-Plated Flat-Rolled Steel Products From Japan Determination On the basis... injured by reason of imports from Japan of diffusion-annealed, nickel-plated flat-rolled steel...

  13. Recovery process of neutron-irradiated vanadium alloys in post-irradiation annealing treatment

    Energy Technology Data Exchange (ETDEWEB)

    Fukumoto, K., E-mail: fukumoto@u-fukui.ac.jp [Research Institute for Nuclear Engineering, University of Fukui, Tsuruga, Fukui 914-0055 (Japan); Iwasaki, M. [Research Institute for Nuclear Engineering, University of Fukui, Tsuruga, Fukui 914-0055 (Japan); Xu, Q. [KUR, Kyoto University, Kumatori, Osaka (Japan)

    2013-11-15

    Experiments to determine the influence of post-irradiation annealing on the mechanical properties and microstructures of neutron-irradiated V–4Cr–4Ti alloys were conducted. Two groups of specimens (as-irradiated specimens and specimens which underwent the post-irradiation annealing treatment) were subjected to tensile tests at room temperature and 773 K. Post-irradiation annealing experiments carried out over periods of up to 50 h were used to restore strength and ductility. As annealing time was extended, ductility was recovered up to 5% at 50 h anneal; however irradiation hardening was not recovered completely. Microstructural changes due to post-irradiation annealing corresponded to the amount that yield stress increased in tensile behavior in the irradiated specimen. The recovery in ductility was likely caused by the dissolution of interstitial impurities from defect clusters and dislocation cores produced by neutron irradiation during post-irradiation anneal treatment. A 3% elongation recovery in V–4Cr–4Ti alloys was achieved by annealing at 773 K for 20 h in a vacuum for neutron-irradiated samples at low temperature.

  14. Sensitivity enhancement using annealed polymer optical-fibre-based sensors for pressure sensing applications

    Science.gov (United States)

    Pospori, A.; Marques, C. A. F.; Sáez-Rodríguez, D.; Nielsen, K.; Bang, O.; Webb, D. J.

    2016-05-01

    Thermal annealing can be used to induce a permanent negative Bragg wavelength shift for polymer fibre grating sensors and it was originally used for multiplexing purposes. Recently, researchers showed that annealing can also provide additional benefits, such as strain and humidity sensitivity enhancement and augmented temperature operational range. The annealing process can change both the optical and mechanical properties of the fibre. In this paper, the annealing effects on the stress and force sensitivities of PMMA fibre Bragg grating sensors are investigated. The incentive for that investigation was an unexpected behaviour observed in an array of sensors which were used for liquid level monitoring. One sensor exhibited much lower pressure sensitivity and that was the only one that was not annealed. To further investigate the phenomenon, additional sensors were photo-inscribed and characterised with regard their stress and force sensitivities. Then, the fibres were annealed by placing them in hot water, controlling with that way the humidity factor. After annealing, stress and force sensitivities were measured again. The results show that the annealing can improve the stress and force sensitivity of the devices. This can provide better performing sensors for use in stress, force and pressure sensing applications.

  15. Microstructure evolution during helium irradiation and post-irradiation annealing in a nanostructured reduced activation steel

    Science.gov (United States)

    Liu, W. B.; Ji, Y. Z.; Tan, P. K.; Zhang, C.; He, C. H.; Yang, Z. G.

    2016-10-01

    Severe plastic deformation, intense single-beam He-ion irradiation and post-irradiation annealing were performed on a nanostructured reduced activation ferritic/martensitic (RAFM) steel to investigate the effect of grain boundaries (GBs) on its microstructure evolution during these processes. A surface layer with a depth-dependent nanocrystalline (NC) microstructure was prepared in the RAFM steel using surface mechanical attrition treatment (SMAT). Microstructure evolution after helium (He) irradiation (24.8 dpa) at room temperature and after post-irradiation annealing was investigated using Transmission Electron Microscopy (TEM). Experimental observation shows that GBs play an important role during both the irradiation and the post-irradiation annealing process. He bubbles are preferentially trapped at GBs/interfaces during irradiation and cavities with large sizes are also preferentially trapped at GBs/interfaces during post-irradiation annealing, but void denuded zones (VDZs) near GBs could not be unambiguously observed. Compared with cavities at GBs and within larger grains, cavities with smaller size and higher density are found in smaller grains. The average size of cavities increases rapidly with the increase of time during post-irradiation annealing at 823 K. Cavities with a large size are observed just after annealing for 5 min, although many of the cavities with small sizes also exist after annealing for 240 min. The potential mechanism of cavity growth behavior during post-irradiation annealing is also discussed.

  16. Electrical behavior of amide functionalized graphene oxide and graphene oxide films annealed at different temperatures

    International Nuclear Information System (INIS)

    Films of graphene oxide (GO) and amide functionalized graphene oxides (AGOs) were deposited on SiO2/Si(100) by spin coating and were thermally annealed at different temperatures. Sheet resistance of GO and AGOs films was measured using four probe resistivity method. GO an insulator at room temperature, exhibits decrease in sheet resistance with increase in annealing temperature. However, AGOs' low sheet resistance (250.43 Ω) at room temperature further decreases to 39.26 Ω after annealing at 800 °C. It was observed that the sheet resistance of GO was more than AGOs up to 700 °C, but effect was reversed after annealing at higher temperature. At higher annealing temperatures the oxygen functionality reduces in GO and sheet resistance decreases. Sheet resistance was found to be annealing time dependent. Longer duration of annealing at a particular temperature results in decrease of sheet resistance. - Highlights: • Amide functionalized graphene oxides (AGOs) were synthesized at room temperature (RT). • AGO films have low sheet resistance at RT as compared to graphene oxide (GO). • Fast decrease in the sheet resistance of GO with annealing as compared to AGOs • AGOs were found to be highly dispersible in polar solvents

  17. Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

    Science.gov (United States)

    Theodorakos, I.; Zergioti, I.; Vamvakas, V.; Tsoukalas, D.; Raptis, Y. S.

    2014-01-01

    In this work, a picosecond diode pumped solid state laser and a nanosecond Nd:YAG laser have been used for the annealing and the partial nano-crystallization of an amorphous silicon layer. These experiments were conducted as an alternative/complementary to plasma-enhanced chemical vapor deposition method for fabrication of micromorph tandem solar cell. The laser experimental work was combined with simulations of the annealing process, in terms of temperature distribution evolution, in order to predetermine the optimum annealing conditions. The annealed material was studied, as a function of several annealing parameters (wavelength, pulse duration, fluence), as far as it concerns its structural properties, by X-ray diffraction, SEM, and micro-Raman techniques.

  18. Manipulation of magnetic properties of glass-coated microwires by annealing

    International Nuclear Information System (INIS)

    We demonstrated that magnetic properties (hysteresis loops, domain wall propagation and giant magnetoimpedance effect) of Fe and Co-rich amorphous microwires can be tailored by stress and conventional annealing. Observed dependences discussed considering stress relaxation, back stresses and change of the magnetostriction after samples annealing. These considerations have been proved by experimental observation of the change of the magnetostriction coefficient sign induced by annealing. - Highlights: • Manipulation of hysteresis loop of amorphous Co–Fe- rich microwires by annealing. • Coexistence of Giant magnetoimpedance effect and fast domain wall propagation in the same sample. • Evidence of annealing dependence of the magnetostriction coefficient. • Effect of stress induced anisotropy on magnetic properties and GMI effect

  19. Influence of Thermal Annealing on Structural and Electrical Properties of Nickel Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    A. Mallikarjuna Reddy

    2011-01-01

    Full Text Available Nickel oxide (NiO is a potential p-type transparent conducting oxide material with suitable electrical properties. Nickel oxide thin films were deposited by dc reactive magnetron sputtering technique on unheated glass substrates, and subsequently annealed at 773 K in two different annealing processes. X-ray diffractometer studies revealed that the films exhibited (200 preferred orientation. Scanning electron microscopy and energy dispersive spectroscopy were used to study the effect of annealing temperature on surface morphology and composition of the films. The uniform grains were distributed throughout the substrate after annealed at 773 K. Electrical properties were studied by Hall effect measurements. The low electrical resistivity of 36.9 Ω cm was observed after annealing.

  20. Atomistic aspects of carrier concentration variation in post-annealed indium tin oxide films

    International Nuclear Information System (INIS)

    Post-annealing environment-dependent optical and electrical properties of indium tin oxide films grown on glass were examined. X-ray diffraction measurements revealed that all of the films exhibited poly-crystallinity after annealing at 400 °C for 10 min O2, in-air and N2. The optical property measurements yielded  >80% transmittances for all the films except for the as-grown and O2-annealed films, even though there were no significant optical band-gap energy differences. In the Hall measurements, all of the films exhibited n-type characteristics. However, the film annealed under the N2 environment showed the best electrical properties (highest carrier concentration and conductivity). The physical origin of electrical property variations due to annealing environment differences was explained by examining the core-level x-ray photoelectron spectra. (paper)

  1. Annealing effects on residual stress of HfO2/SiO2 multilayers

    Institute of Scientific and Technical Information of China (English)

    Yanming Shen; Zhaoxia Han; Jianda Shao; Shuying Shao; Hongbo He

    2008-01-01

    HfO2/SiO2 multilayer films were deposited on BK7 glass substrates by electron beam evaporation method.The effects of annealing at the temperature between 200 and 400℃ on residual stresses have been studied.It is found that the residual stress of as-deposited HfO2/SiO2 multilayers is compressive.It becomes tensile after annealing at 200℃,and then the value of tensile stress increases as annealing temperature increases.And cracks appear in the film because tensile stress is too large when the sample is annealed at 400℃.At the same time,the crystallite size increases and interplanar distance decreases with the increase of annealing temperature.The variation of residual stresses is corresponding with the evolution of structures.

  2. Annealing results on low-energy proton-irradiated GaAs solar cells

    Science.gov (United States)

    Kachare, R.; Anspaugh, B. E.; O'Meara, L.

    1988-01-01

    AlGaAs/GaAs solar cells with an approximately 0.5-micron-thick Al(0.85)Ga(0.15)As window layer were irradiated using normal and isotropic incident protons having energies between 50 and 500 keV with fluence up to 1 x 10 to the 12th protons/sq cm. The irradiated cells were annealed at temperatures between 150 and 300 C in nitrogen ambient. The annealing results reveal that significant recovery in spectral response at longer wavelengths occurred. However, the short-wavelength spectral response showed negligible annealing, irrespective of the irradiation energy and annealing conditions. This indicates that the damage produced near the AlGaAs/GaAs interface and the space-charge region anneals differently than damage produced in the bulk. This is explained by using a model in which the as-grown dislocations interact with irradiation-induced point defects to produce thermally stable defects.

  3. Single crystalline graphene synthesized by thermal annealing of humic acid over copper foils

    Science.gov (United States)

    Beall, Gary W.; Duraia, El-Shazly M.; Yu, Q.; Liu, Z.

    2014-02-01

    Production of graphene by thermal annealing on copper foil substrates has been studied with different sources of carbon. The three carbon sources include humic acid derived from leonardite, graphenol, and activated charcoal. Hexagonal single crystalline graphene has been synthesized over the copper foil substrates by thermal annealing of humic acid, derived from leonardite, in argon and hydrogen atmosphere (Ar/H2=20). The annealing temperature was varied between 1050 °C and 1100 °C at atmospheric pressure. Samples have been investigated using scanning electron microscope (SEM) and Raman spectroscopy. At lower temperatures the thermal annealing of the three carbon sources used in this study produces pristine graphene nanosheets which cover almost the whole substrate. However when the annealing temperature has been increased up to 1100 °C, hexagonal single crystalline graphene have been observed only in the case of the humic acid. Raman analysis showed the existence of 2D band around 2690 cm-1.

  4. Annealing to Mitigate Pitting in Electropolished Niobium Coupons and SRF Cavities

    Energy Technology Data Exchange (ETDEWEB)

    Cooley, L.D.; Hahn, E.; Hicks, D.; Romanenko, A.; Schuessler, R.; Thompson, C.; /Fermilab

    2011-06-08

    Ongoing studies at Fermilab investigate whether dislocations and other factors instigate pitting during cavity electropolishing (EP), despite careful processing controls and the inherent leveling mechanism of EP itself. Here, cold-worked niobium coupons, which exhibited increased tendencies for pitting in our past study, were annealed in a high vacuum furnace and subsequently processed by EP. Laser confocal scanning microscopy and special defect counting algorithms were used to assess the population of pits formed. Hardness measurements indicated that annealing for 2 hours at 800 C produced recovery, whereas annealing for 12 hours at 600 C did not, as is consistent with known changes for cavities annealed in a similar way. The 800 C anneal was effective in some cases but not others, and we discuss reasons why tendencies for pitting remain. We discuss implications for cavities and continued work to understand pitting.

  5. The Annealing of (n, γ) Recoil Damage in Ferroelectric Tri-Glycine Sulphate

    International Nuclear Information System (INIS)

    The investigation of neutron irradiated ferroelectric crystals may throw light on some factors controlling the annealing reactions of (n, γ) recoil fragments in complex crystals. Experiments conducted with irradiated triglycine sulphate crystal show wide variations of the S35 retention as a function of the annealing temperature. Annealing both below and above ferroelectric transition temperature (47°C) proceeds at faster rates than at this temperature. The kinetics of annealing as a function of the dielectric constant of the ferroelectric crystals is compared to results obtained for ammonium sulphate (which presents a ferroelectric transition at a much lower temperature). A discussion of the observations is presented in the light of present theories of annealing phenomena. (author)

  6. Selective aspect ratio of CNTs based on annealing temperature by TCVD method

    Science.gov (United States)

    Yousefi, Amin Termeh; Mahmood, Mohamad Rusop; Ikeda, Shoichiro

    2016-07-01

    Various aspect ratios of CNTs reported based on alteration of annealing temperature using thermal-chemical vapor deposition (TCVD) method. Also the growth dependent and independent parameters of the carbon nanotube (CNTs) array were studied as a function of synthesis method. The FESEM images indicate that the nanotubes are approximately perpendicular to the surface of the silicon substrate and form carbon nanotubes in different aspect ratios according to the applied annealing temperature. Furthermore, due to the optimized results it can be observed that, the mechanism of the CNTs growth is still present in the annealing step as well as deposition process and the most CNTs with crystalline aspect, produced in the annealing temperature, which was optimized at 700 - 900 ˚C. This result demonstrates that the growth rate, mass production, diameter, density, and crystallinity of CNT can be controlled by the annealing temperature.

  7. Rapid thermal annealing effects on tin oxide nanowires prepared by vapor-liquid-solid technique.

    Science.gov (United States)

    Kar, Ayan; Yang, Jianyong; Dutta, Mitra; Stroscio, Michael A; Kumari, Jyoti; Meyyappan, M

    2009-02-11

    Tin oxide nanowires have been grown on p-type silicon substrates using a gold-catalyst-assisted vapor-liquid-solid growth process. The nanowires were annealed in the presence of oxygen at 700 degrees C for different time intervals. The changes in material properties of the nanowires after annealing were investigated using various characterization techniques. Annealing improves the crystal quality of the nanowires as seen from Raman spectroscopy analysis. Photoluminescence (PL) data indicates a decrease in the oxygen vacancies and defects after annealing, affecting the luminescence from the nanowires. In addition, x-ray photoelectron spectroscopy (XPS) was used to obtain the changes in the tin and oxygen atomic concentrations before and after annealing, from which the stoichiometry was calculated.

  8. Picosecond and nanosecond laser annealing and simulation of amorphous silicon thin films for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Theodorakos, I.; Zergioti, I.; Tsoukalas, D.; Raptis, Y. S., E-mail: yraptis@central.ntua.gr [Physics Department, National Technical University of Athens, Heroon Polytechniou 9, 15780 Zographou, Athens (Greece); Vamvakas, V. [Heliosphera SA, Industrial Area of Tripolis, 8th Building Block, 5th Road, GR-221 00 Tripolis (Greece)

    2014-01-28

    In this work, a picosecond diode pumped solid state laser and a nanosecond Nd:YAG laser have been used for the annealing and the partial nano-crystallization of an amorphous silicon layer. These experiments were conducted as an alternative/complementary to plasma-enhanced chemical vapor deposition method for fabrication of micromorph tandem solar cell. The laser experimental work was combined with simulations of the annealing process, in terms of temperature distribution evolution, in order to predetermine the optimum annealing conditions. The annealed material was studied, as a function of several annealing parameters (wavelength, pulse duration, fluence), as far as it concerns its structural properties, by X-ray diffraction, SEM, and micro-Raman techniques.

  9. Manipulation of magnetic properties of glass-coated microwires by annealing

    Energy Technology Data Exchange (ETDEWEB)

    Zhukov, A., E-mail: arkadi.joukov@ehu.es [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain); Chichay, K. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); Talaat, A. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain); Rodionova, V. [Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation); National University of Science and Technology (MISIS), 119049 Moscow (Russian Federation); Blanco, J.M. [Dpto. Física Aplicada, EUPDS Basque Country University UPV/EHU (Spain); Ipatov, M.; Zhukova, V. [Dpto. Fisica de Materiales, Fac. Quimicas, UPV/EHU, 20009 San Sebastian (Spain)

    2015-06-01

    We demonstrated that magnetic properties (hysteresis loops, domain wall propagation and giant magnetoimpedance effect) of Fe and Co-rich amorphous microwires can be tailored by stress and conventional annealing. Observed dependences discussed considering stress relaxation, back stresses and change of the magnetostriction after samples annealing. These considerations have been proved by experimental observation of the change of the magnetostriction coefficient sign induced by annealing. - Highlights: • Manipulation of hysteresis loop of amorphous Co–Fe- rich microwires by annealing. • Coexistence of Giant magnetoimpedance effect and fast domain wall propagation in the same sample. • Evidence of annealing dependence of the magnetostriction coefficient. • Effect of stress induced anisotropy on magnetic properties and GMI effect.

  10. Study of Grain Growth of CZTS Nanoparticles Annealed in Sulfur Atmosphere

    DEFF Research Database (Denmark)

    Engberg, Sara Lena Josefin; Crovetto, Andrea; Hansen, Ole;

    2014-01-01

    of the main limitations for this approach, and (2) that grain boundaries and defects are believed to be a site for recombination that limits the efficiency. Annealing in vacuum and/or a nitrogen atmosphere facilitates grain growth and improves the electronic properties. Conventionally selenization (annealing...... in selenium) shows the best results, however sulfurization (annealing in sulfur) has the advantage of leading to a non-toxic material. In this work, nanocrystals of CZTS with a targeted Cu-poor/Zn-rich composition are synthesized through a hot-injection method with oleylamine as the solvent. The nanocrystal...... inks are deposited through doctor blading in octanethiol, and annealed in a vacuum furnace using a graphite box with sulfur. The surface morphology and thus grain growth are studied for various annealing conditions in a 10-mbar nitrogen atmosphere with a varying amount of sulfur.The films...

  11. Annealing behavior of radiation damage in JFET-input operational amplifiers

    Institute of Scientific and Technical Information of China (English)

    Zheng Yuzhan; Lu Wu; Ren Diyuan; Wang Yiyuan; Guo Qi; Yu Xuefeng

    2009-01-01

    The elevated and room temperature annealing behavior of radiation damage in JFET-input operational amplifiers (op-amps) were investigated. High-and low-dose-rate irradiation results show that one of the JFET-input op-amps studied in this paper exhibits enhanced low-dose-rate sensitivity and the other shows time-dependent effect. The offset voltage of both op-amps increases during long-term annealing at room temperature. However, the offset voltage decreases at elevated temperature. The dramatic difference in annealing behavior at room and elevated temperatures indicates the migration behavior of radiation-induced species at elevated and room temperatures. This provides useful information to understand the degradation and annealing mechanisms in JFET-input op-amps under total ionizing radiation. Moreover, the annealing of oxide trapped charges should be taken into consideration, when using elevated temperature methods to evaluate low-dose-rate damage.

  12. SEMICONDUCTOR DEVICES: Total ionizing dose effects and annealing behavior for domestic VDMOS devices

    Science.gov (United States)

    Bo, Gao; Xuefeng, Yu; Diyuan, Ren; Gang, Liu; Yiyuan, Wang; Jing, Sun; Jiangwei, Cui

    2010-04-01

    Total dose effects and annealing behavior of domestic n-channel VDMOS devices under different bias conditions were investigated. The dependences of typical electrical parameters such as threshold voltage, breakdown voltage, leakage current, and on-state resistance upon total dose were discussed. We also observed the relationships between these parameters and annealing time. The experiment results show that: the threshold voltage negatively shifts with the increasing of total dose and continues to decrease at the beginning of 100 °C annealing; the breakdown voltage under the drain bias voltage has passed through the pre-irradiation threshold voltage during annealing behaving with a “rebound" effect; there is a latent interface-trap buildup (LITB) phenomenon in the VDMOS devices; the leakage current is suppressed; and on-state resistance is almost kept constant during irradiation and annealing. Our experiment results are meaningful and important for further improvements in the design and processing.

  13. Propagating self-sustained annealing of radiation-induced interstitial complexes

    Science.gov (United States)

    Bokov, P. M.; Selyshchev, P. A.

    2016-02-01

    A propagating self-sustained annealing of radiation induced defects as a result of thermal-concentration instability is studied. The defects that are considered in the model are complexes. Each of them consists of one atom of impunity and of one interstitial atom. Crystal with defects has extra energy which is transformed into heat during defect annealing. Simulation of the auto-wave of annealing has been performed. The front and the speed of the auto-wave have been obtained. It is shown that annealing occurs in a narrow region of time and space. There are two kinds of such annealing behaviour. In the first case the speed of the auto-wave oscillates near its constant mean value and the front of temperature oscillates in a complex way. In the second case the speed of propagation is constant and fronts of temperature and concentration look like sigmoid functions.

  14. The influence of annealing temperature on the morphology of graphene islands

    Institute of Scientific and Technical Information of China (English)

    Huang Li; Gao Hong-Jun; Xu Wen-Yan; Que Yan-De; Pan Yi; Gao Min; Pan Li-Da; Guo Hai-Ming; Wang Ye-Liang; Du Shi-Xuan

    2012-01-01

    We report on temperature-programmed growth of graphene islands on Ru (0001) at annealing temperatures of 700 ℃,800 ℃,and 900 ℃.The sizes of the islands each show a nonIinear increase with the annealing temperature.In 700 ℃ and 800 ℃ annealings,the islands have nearly the same sizes and their ascending edges are embedded in the upper steps of the ruthenium substrate,which is in accordance with the etching growth mode.In 900 ℃ annealing,the islands are much larger and of lower quality,which represents the early stage of Smoluchowski ripening.A longer time annealing at 900 ℃ brings the islands to final equilibrium with an ordered moiré pattern.Our work provides new details about graphene early growth stages that could facilitate the better control of such a growth to obtain graphene with ideal size and high quality.

  15. Microstructure and mechanical behavior of annealed MP35N alloy wire

    Energy Technology Data Exchange (ETDEWEB)

    Prasad, M.J.N.V. [School of Engineering, Brown University, Providence, RI 02912 (United States); Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai 400076 (India); Reiterer, M.W. [Medtronic, PLC, USA, Science and Technology, Minneapolis, MN 55432 (United States); Kumar, K.S., E-mail: Sharvan_Kumar@brown.edu [School of Engineering, Brown University, Providence, RI 02912 (United States)

    2015-06-11

    In a previous paper, the microstructure, monotonic, and cyclic response of as-drawn ~100 μm diameter MP35N low-Ti alloy wire were presented and discussed. In this sequel paper, the effects of annealing the same cold-drawn wire on microstructure and mechanical properties are examined. Specifically, segments of the wire were annealed for 1 h at 973 K, 1023 K, 1073 K, 1123 K and 1173 K in a vacuum furnace. The resulting microstructure was characterized by SEM, EBSD and TEM and compared to the as-drawn microstructure. In-situ heating in the TEM of MP35N ribbon in a similarly cold worked condition enabled corroboration of microstructure evolution during annealing. Annealed wires were tested monotonically and cyclically in uniaxial tension at room temperature, the latter using a stress ratio (R) of 0.3. In addition, the annealed wires were tested cyclically at R=−1 using the rotating beam bending fatigue test. Post-deformation structures and fracture surfaces were characterized using TEM and SEM respectively. Annealing the cold drawn wire results in recrystallization and grain growth; the extent is dependent on the annealing temperature. Deformation twin boundaries in the as-drawn structure illustrate faceted bulging and eventually complete elimination, the microstructure evolving into fine equiaxed grains containing coarser annealing twins with no significant change in texture. Yield strength decreases rapidly with recrystallization to almost half the value of the as-drawn condition, but is accompanied by an increase in modulus (by ~25%) and tensile elongation reaching ~30%. Cyclic response by the way of S–N curves is not enhanced by annealing on an absolute stress scale (due to the loss in yield strength) although the annealed wires are cyclically superior when the stress data are normalized by yield stress.

  16. Microstructure and mechanical behavior of annealed MP35N alloy wire

    International Nuclear Information System (INIS)

    In a previous paper, the microstructure, monotonic, and cyclic response of as-drawn ~100 μm diameter MP35N low-Ti alloy wire were presented and discussed. In this sequel paper, the effects of annealing the same cold-drawn wire on microstructure and mechanical properties are examined. Specifically, segments of the wire were annealed for 1 h at 973 K, 1023 K, 1073 K, 1123 K and 1173 K in a vacuum furnace. The resulting microstructure was characterized by SEM, EBSD and TEM and compared to the as-drawn microstructure. In-situ heating in the TEM of MP35N ribbon in a similarly cold worked condition enabled corroboration of microstructure evolution during annealing. Annealed wires were tested monotonically and cyclically in uniaxial tension at room temperature, the latter using a stress ratio (R) of 0.3. In addition, the annealed wires were tested cyclically at R=−1 using the rotating beam bending fatigue test. Post-deformation structures and fracture surfaces were characterized using TEM and SEM respectively. Annealing the cold drawn wire results in recrystallization and grain growth; the extent is dependent on the annealing temperature. Deformation twin boundaries in the as-drawn structure illustrate faceted bulging and eventually complete elimination, the microstructure evolving into fine equiaxed grains containing coarser annealing twins with no significant change in texture. Yield strength decreases rapidly with recrystallization to almost half the value of the as-drawn condition, but is accompanied by an increase in modulus (by ~25%) and tensile elongation reaching ~30%. Cyclic response by the way of S–N curves is not enhanced by annealing on an absolute stress scale (due to the loss in yield strength) although the annealed wires are cyclically superior when the stress data are normalized by yield stress

  17. Influence of silicon substitution and annealing temperature on the microstructure and magnetic properties of lithium ferrite

    Energy Technology Data Exchange (ETDEWEB)

    Mazen, S.A., E-mail: dr.saidmazen@gmail.com; Abu-Elsaad, N.I.; Nawara, A.S.

    2015-11-05

    Silicon substituted lithium ferrite with the general chemical formula Li{sub 0.5+0.5x}Si{sub x}Fe{sub 2.5−1.5x}O{sub 4}, (where, x = 0.0, 0.1, 0.2, 0.3, 0.4, 0.5 and 0.6) were prepared by high energy ball milling (HEBM) technique. The obtained powders were annealed at three different temperatures (700, 900 and 1000 °C) for 2 h. The phase formation, microstructure and magnetic properties with respect to annealing temperature were studied using different characterization techniques like X-ray diffraction (XRD), transmission electron microscopy (TEM) and vibrating sample magnetometer (VSM), respectively. The results exhibit the formation of single phase in cubic spinel at annealing temperature 1000 °C, with a slight decrease in lattice parameter values. The bulk density of Li–Si ferrite samples increases as the annealing temperature increases. From VSM measurements it was observed that the saturation magnetization (M{sub s}) decreases with silicon content. The observed decrease in M{sub s} was explained in terms of Neel's two sublattice model according to which the magnetic moment is the vector sum of lattice magnetic moment. The magnetic measurements showed that the magnetization increases, and the coercivity decreases by increasing the annealing temperature. This is attributed to the promotion of crystallinity consequent of annealing. The permeability showed increasing trend with the increase of annealing temperature since the permeability depends on the microstructure. The Curie temperature obtained from μ{sub i}–T curves indicates that it is unaffected by silicon substitution. - Highlights: • Li–Si ferrites have been prepared by HEBM technique. • Single phase spinel structure is achieved at annealing temperature 1000 °C for 2 h. • Magnetic properties were affected by both silicon and annealing temperatures. • Curie temperature has no noticeable change with the annealing temperature.

  18. Effect of annealing temperature on magnetic phase transition in Fe3O4 nanoparticles

    International Nuclear Information System (INIS)

    Fe3O4 (magnetite) nanoparticles (NPs) were synthesized using a co-precipitation method, and then annealed at various temperatures between 50 and 850 °C for 1 h in air. After annealing, the NPs were characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy and vibrating sample magnetometer (VSM). The FTIR and XRD results indicated that Fe3O4 NPs were converted to γ-Fe2O3 (maghemite) by annealing at 250 °C for 1 h and then to α-Fe2O3 (hematite) on annealing in the range of 550–650 °C. The average crystallite size of the NPs estimated by the Debye–Scherrer equation increased from 6.6 to 37.6 nm by increasing annealing temperature from 50 to 850 °C. According to VSM results, the magnetite NPs were superparamagnetic and converted to the maghemite with superparamagnetic phase by annealing up to 550 °C. A phase transition from soft to hard ferromagnetic was occurred at annealing temperature 650 and 850 °C, respectively °C. This phase transition was attributed to the conversion of magnetite to hematite. The VSM analysis confirmed the XRD and FTIR results. The saturation magnetization (Ms) of Fe3O4 NPs was increased from 41.69 to 53.61 emu/g by increasing annealing temperature from 50 to 550 °C, and then decreased intensively to 0.49 emu/g after annealing at 850 °C. By increasing annealing temperature from 50 to 550, the crystallite size of NPs was increased from 6.6 to 12.7 and the coercive force (Hc) was reached to 4.20 Oe after annealing at 550 °C and then intensively increased to 1459.02 Oe for any further increasing of particle size up to 850 °C. - Highlights: • Fe3O4 nanoparticles (NPs) were synthesized using a co-precipitation method. • Prepared NPs annealed at 50, 250, 350, 450, 550, 650, 750, and 850°C for 1h in air. • Transform of superpara Fe3O4 to superpara γ-Fe2O3 occurred by annealing at 250 °C. • Superpara Fe3O4 transformed into α-Fe2O3, with soft ferromagnetic phase at 650 °C.

  19. Effective dopant activation by susceptor-assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon

    Science.gov (United States)

    Zhao, Zhao; David Theodore, N.; Vemuri, Rajitha N. P.; Lu, Wei; Lau, S. S.; Lanz, A.; Alford, T. L.

    2013-12-01

    Rapid processing and reduced end-of-range diffusion result from susceptor-assisted microwave (MW) annealing, making this technique an efficient processing alternative for electrically activating dopants within ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical activation. Susceptor-assisted MW annealing, of ion-implanted Si, enables more effective dopant activation and at lower temperatures than required for rapid thermal annealing (RTA). Raman spectroscopy and ion channeling analyses are used to monitor the extent of ion implantation damage and recrystallization. The presence and behavior of extended defects are monitored by cross-section transmission electron microscopy. Phosphorus implanted Si samples experience effective electrical activation upon MW annealing. On the other hand, when boron implanted Si is MW annealed, the growth of extended defects results in reduced crystalline quality that hinders the electrical activation process. Further comparison of dopant diffusion resulting from MW annealing and rapid thermal annealing is performed using secondary ion mass spectroscopy. MW annealed ion implanted samples show less end-of-range diffusion when compared to RTA samples. In particular, MW annealed P+ implanted samples achieve no visible diffusion and equivalent electrical activation at a lower temperature and with a shorter time-duration of annealing compared to RTA. In this study, the peak temperature attained during annealing does not depend on the dopant species or dose, for susceptor-assisted MW annealing of ion-implanted Si.

  20. Effective dopant activation by susceptor-assisted microwave annealing of low energy boron implanted and phosphorus implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Zhao; Vemuri, Rajitha N. P.; Alford, T. L., E-mail: TA@asu.edu [School of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287 (United States); David Theodore, N. [CHD-Fab, Freescale Semiconductor Inc., 1300 N. Alma School Rd., Chandler, Arizona 85224 (United States); Lu, Wei; Lau, S. S. [Department of Electrical Engineering, University of California, San Diego, California 92093 (United States); Lanz, A. [Department of Mathematics, Norfolk State University, Norfolk, Virginia 23504 (United States)

    2013-12-28

    Rapid processing and reduced end-of-range diffusion result from susceptor-assisted microwave (MW) annealing, making this technique an efficient processing alternative for electrically activating dopants within ion-implanted semiconductors. Sheet resistance and Hall measurements provide evidence of electrical activation. Susceptor-assisted MW annealing, of ion-implanted Si, enables more effective dopant activation and at lower temperatures than required for rapid thermal annealing (RTA). Raman spectroscopy and ion channeling analyses are used to monitor the extent of ion implantation damage and recrystallization. The presence and behavior of extended defects are monitored by cross-section transmission electron microscopy. Phosphorus implanted Si samples experience effective electrical activation upon MW annealing. On the other hand, when boron implanted Si is MW annealed, the growth of extended defects results in reduced crystalline quality that hinders the electrical activation process. Further comparison of dopant diffusion resulting from MW annealing and rapid thermal annealing is performed using secondary ion mass spectroscopy. MW annealed ion implanted samples show less end-of-range diffusion when compared to RTA samples. In particular, MW annealed P{sup +} implanted samples achieve no visible diffusion and equivalent electrical activation at a lower temperature and with a shorter time-duration of annealing compared to RTA. In this study, the peak temperature attained during annealing does not depend on the dopant species or dose, for susceptor-assisted MW annealing of ion-implanted Si.

  1. Annealing Behavior of New Micro-defects in p-type Large-diameter CZ-Si Crystal

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    New types of defects in 15.24 cm diameter and 20.32 cm diameter Czochralski silicon crystals were found after SCI cleaning. Their annealing behavior was studied. It was suggested that these defects become larger during high temperature annealing and disappear by annealing at 1250℃.

  2. Unidirectional self-assembly of soft templated mesoporous carbons by zone annealing

    Science.gov (United States)

    Xue, Jiachen; Singh, Gurpreet; Qiang, Zhe; Karim, Alamgir; Vogt, Bryan D.

    2013-08-01

    Surfactant or block copolymer-templated mesoporous films have been extensively explored, but achieving mesostructure coherence and unidirectional orientation over macroscopic dimensions has remained quite challenging for these self-assembled systems. Here, we extend the concepts associated with zone refinement of crystalline materials to soft templated mesoporous carbon films based on the cooperative assembly of commercial non-ionic surfactants (block copolymers) and phenolic resin oligomers (resol) to provide macroscopic alignment of both cubic (FDU-16) and hexagonal (FDU-15) mesostructures. The average orientation of these mesophases is determined from rotation grazing incidence small angle X-ray scattering (GISAXS) measurements. For FDU-15 templated by Pluronic P123, the orientation factor for the zone-annealed film is 0.98 based on the average of the second Legendre polynomial, but this orientation deteriorates significantly during carbonization. Notably, a thermal stabilization step following zone annealing preserves the orientation of the mesostructure during carbonization. The orientation factor for an isotropic cubic structure (FDU-16 templated by Pluronic F127) is only 0.48 (based on the 111 reflection with incident angle 0.15°) for the same zone annealing protocol, but this illustrates the versatility of zone annealing to different mesostructures. Unexpectedly, zone annealing of FDU-15 templated by Pluronic F127 leads to stabilization of the mesostructure through carbonization, whereas this structure collapses fully during carbonization even after extended oven annealing; despite no clear macroscopic orientation of the cylindrical mesostructure from zone annealing. Thermal zone annealing provides a simple methodology to produce highly ordered and macroscopically oriented stable mesoporous carbon films, but the efficacy is strongly tied to the mobility of the template during the zone annealing.Surfactant or block copolymer-templated mesoporous films have

  3. Influence of annealing temperature on ZnO thin films grown by dual ion beam sputtering

    Indian Academy of Sciences (India)

    Sushil Kumar Pandey; Saurabh Kumar Pandey; Vishnu Awasthi; Ashish Kumar; Uday P Deshpande; Mukul Gupta; Shaibal Mukherjee

    2014-08-01

    We have investigated the influence of in situ annealing on the optical, electrical, structural and morphological properties of ZnO thin films prepared on -type Si(100) substrates by dual ion beam sputtering deposition (DIBSD) system. X-ray diffraction (XRD) measurements showed that all ZnO films have (002) preferred orientation. Full-width at half-maximum (FWHM) of XRD from the (002) crystal plane was observed to reach to a minimum value of 0.139° from ZnO film, annealed at 600 °C. Photoluminescence (PL) measurements demonstrated sharp near-band-edge emission (NBE) at ∼ 380 nm along with broad deep level emissions (DLEs) at room temperature. Moreover, when the annealing temperature was increased from 400 to 600 °C, the ratio of NBE peak intensity to DLE peak intensity initially increased, however, it reduced at further increase in annealing temperature. In electrical characterization as well, when annealing temperature was increased from 400 to 600 °C, room temperature electron mobility enhanced from 6.534 to 13.326 cm2/V s, and then reduced with subsequent increase in temperature. Therefore, 600 °C annealing temperature produced good-quality ZnO film, suitable for optoelectronic devices fabrication. X-ray photoelectron spectroscopy (XPS) study revealed the presence of oxygen interstitials and vacancies point defects in ZnO film annealed at 400 °C.

  4. The effect of post-annealing on Indium Tin Oxide thin films by magnetron sputtering method

    Energy Technology Data Exchange (ETDEWEB)

    Park, J.H., E-mail: jpark217@uic.edu [Department of Physics, University of Illinois at Chicago, 845 West Taylor Street, Chicago, IL 60607-7059 (United States); Buurma, C.; Sivananthan, S. [Department of Physics, University of Illinois at Chicago, 845 West Taylor Street, Chicago, IL 60607-7059 (United States); Kodama, R.; Gao, W. [EPIR Technologies, Inc., 590 Territorial Drive, Unit B, Bolingbrook, IL 60440 (United States); Gessert, T.A. [National Renewable Energy Laboratory, Golden, CO 80401 (United States)

    2014-07-01

    We report effects of post-annealing on Indium Tin Oxide (ITO) thin films by their physical, electrical, optical, and electronic properties. Carrier concentrations increase up to annealing temperatures of 400 °C, and then decrease at higher annealing temperatures. Burstein–Moss effect occurs as a function of annealing temperature with the highest optical bandgap of 4.17 eV achieved at 400 °C. X-ray photoelectron spectroscopy revealed a ~0.3 eV shift in the Fermi level of the annealed ITO films at 400 °C, and the shift was reduced for temperatures higher than 400 °C. In addition, the results of curve-fitting for the core levels showed a change of ratios of SnO₂ and oxygen in the oxygen deficient regions after annealing. This is correlated to the change of carrier concentration and optical bandgap in the ultraviolet and near-infrared regions at different annealing temperatures.

  5. The effect of rapid thermal annealing on characteristics of carbon coatings on optical fibers

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Jen-Feng; Chen, Tsuen-Sung; Lin, Hung-Chien; Shiue, Sham-Tsong [Department of Materials Science and Engineering, National Chung Hsing University, Taichung (China)

    2010-02-15

    Carbon films are deposited on silica glass fibers by radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD), and the properties of these optical fibers are improved by rapid thermal annealing. The annealing temperatures are set to 100, 200, 300, 400, 500, 550, 600, and 700 C. Experimental results show that the thickness and surface roughness of carbon films decrease with increasing annealing temperature, ranging from as-deposited to 500 C, while the sp{sup 2} carbon bonding, sp{sup 3} CH{sub 3} bonding, optical bandgap, and water contact angle (CA) of carbon films increase. As the annealing temperature increases from 550 to 700 C, parts of the carbon films are delaminated. The sp{sup 3} CH{sub 3} bonding in carbon films is shifted to the sp{sup 3} CH{sub 2} bonding, and the sp{sup 3} CH{sub 2} bonding is subsequently transferred to the sp{sup 2} CH bonding. Meanwhile, the amount of the sp{sup 2} carbon bonding in carbon films increases, while the optical bandgap decreases. Based on the evaluation of water repellency and low-temperature morphology of carbon films, the carbon film annealed at a temperature of 500 C is the best for production of carbon-coated optical fibers. As compared to conventional thermal annealing (CTA), rapid thermal annealing (RTA) is more effective to improve the properties of carbon-coated optical fibers. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  6. Microstructural evolution and pitting resistance of annealed lean duplex stainless steel UNS S32304

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Ziying [Department of Materials Science, Fudan University, Shanghai 200433 (China); Key Laboratory of Ecophysics, Department of Physics, Shihezi University, Shihezi 832003 (China); Xinjiang Laboratory of Phase Transitions and Microstructures in Condensed Matters, Yili Normal University, Yining 835000 (China); Han Dong; Jiang Yiming; Shi Chong [Department of Materials Science, Fudan University, Shanghai 200433 (China); Li Jin, E-mail: jinli@fudan.edu.cn [Department of Materials Science, Fudan University, Shanghai 200433 (China)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer The relationship between pitting corrosion resistance and annealing temperature for UNS S32304 was systemically studied. Black-Right-Pointing-Pointer The specimens annealed at 1080 Degree-Sign C for 1 h, quenched in water exhibit the best pitting corrosion resistance. Black-Right-Pointing-Pointer The relationship between microstructural evolution and pitting resistance of annealed UNS S32304 was discussed in detail. Black-Right-Pointing-Pointer The pitting corrosion resistance is consistent with pitting resistance equivalent number of weaker phase for UNS S32304 alloy. - Abstract: The effect of annealing temperature in the range from 1000 to 1200 Degree-Sign C on the pitting corrosion behavior of duplex stainless steel UNS S32304 was investigated by the potentiodynamic polarization and potentiostatic critical pitting temperature techniques. The microstructural evolution and pit morphologies were studied using a scanning electron microscopy with energy dispersive X-ray spectroscopy. The results demonstrated that the nucleation of metastable pits transformed from austenite phase to ferrite phase with the increasing annealing temperature. As the annealing temperature increased, the pitting corrosion resistance firstly increased and then decreased. The highest pitting corrosion resistance was obtained at 1080 Degree-Sign C with the highest critical pitting temperature value and pitting nucleation resistance. The results could be well explained by the microstructural evolution of ferrite and austenite phases induced by annealing treatment.

  7. PERBANDINGAN KINERJA ALGORITMA GENETIKA DAN SIMULATED ANNEALING UNTUK MASALAH MULTIPLE OBJECTIVE PADA PENJADWALAN FLOWSHOP

    Directory of Open Access Journals (Sweden)

    I Gede Agus Widyadana

    2002-01-01

    Full Text Available The research is focused on comparing Genetics algorithm and Simulated Annealing in the term of performa and processing time. The main purpose is to find out performance both of the algorithm to solve minimizing makespan and total flowtime in a particular flowshop system. Performances of the algorithms are found by simulating problems with variation of jobs and machines combination. The result show the Simulated Annealing is much better than the Genetics up to 90%. The Genetics, however, only had score in processing time, but the trend that plotted suggest that in problems with lots of jobs and lots of machines, the Simulated Annealing will run much faster than the Genetics. Abstract in Bahasa Indonesia : Penelitian ini difokuskan pada pembandingan algoritma Genetika dan Simulated Annealing ditinjau dari aspek performa dan waktu proses. Tujuannya adalah untuk melihat kemampuan dua algoritma tersebut untuk menyelesaikan problem-problem penjadwalan flow shop dengan kriteria minimasi makespan dan total flowtime. Kemampuan kedua algoritma tersebut dilihat dengan melakukan simulasi yang dilakukan pada kombinasi-kombinasi job dan mesin yang berbeda-beda. Hasil simulasi menunjukan algoritma Simulated Annealing lebih unggul dari algoritma Genetika hingga 90%, algoritma Genetika hanya unggul pada waktu proses saja, namun dengan tren waktu proses yang terbentuk, diyakini pada problem dengan kombinasi job dan mesin yang banyak, algoritma Simulated Annealing dapat lebih cepat daripada algoritma Genetika. Kata kunci: Algoritma Genetika, Simulated Annealing, flow shop, makespan, total flowtime.

  8. Influence of hydrogen annealing on the properties of hafnium oxide thin films

    International Nuclear Information System (INIS)

    Research highlights: → Hafnium oxide films deposited by e-beam evaporation were annealed in hydrogen. → XRD revealed that films became ploycrsytalline after annealing at 400 deg. C. → AFM revealed columnar microstructure. → XPS showed deviation from stoichiometry with annealing. → Optical constants and energy gaps were determined. - Abstract: Thin films of hafnium oxide were deposited by electron beam evaporation, and were subsequently annealed in hydrogen. X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy, photoluminescence, spectrophotometry, and current-voltage measurements were performed to investigate the structural, chemical, optical, and electrical properties of the films. As-deposited films were amorphous and nearly stoichiometric. Annealing led to crystallization of the films, and reduction of stoichiometry. Photoluminescence measurements revealed the presence of oxygen-related defects. Optically, the films were transparent with a wide band gap, and this was not affected by hydrogen annealing. Moreover, the films were suitable as anti-reflection coatings on silicon. The electrical resistivity of the films was significantly reduced as a result of annealing.

  9. Influence of annealing temperature on the magnetic properties of Cr+ implanted AlN thin films

    International Nuclear Information System (INIS)

    Diluted magnetic semiconductor (DMS) AlN:Cr films were produced by implanting various doses Cr+ ions into AlN thin films at room temperature followed by a thermal annealing process. The structural and magnetic characteristics of the samples were investigated as a function of annealing temperature by means of Rutherford backscattering and channeling spectrometry (RBS/C), X-ray diffraction (XRD), Raman spectroscopy, vibrating sample magnetometer (VSM) and SQUID. Structural analyzes demonstrate that implantation damages gradually decrease with the increasing of annealing temperature. Moreover, better recrystallization in the implanted part of the samples was observed for the sample annealed at 950 °C. Both XRD and Raman pattern illustrate that no secondary phase or metal related-peaks were appear in all the samples. Magnetic analysis reveals that annealed Cr+-implanted samples exhibit ferromagnetism at room temperature, however, the sample annealed at 950 °C shows improved magnetic characteristics. The saturation magnetization is estimated to be 9.0×10−5 emu/g and the coercive field (Hc) is approximately 200 Oe for the samples annealed 950 °C. In SQUID analysis, FC/ZFC measurements indicate that the Curie temperature (TC) is well above room temperature

  10. Effect of Interim Annealing on Mechanical Strength of TFA-MOD Derived YBCO Coated Conductors

    Science.gov (United States)

    Takagi, Y.; Nakaoka, K.; Nakamura, T.; Yoshizumi, M.; Kiss, T.; Izumi, T.; Shiohara, Y.

    TFA-MOD derived YBCO tapes are expected for many applications due to cost-efficiency. In some applications, uniformity and mechanical strength are required for tapes. A 205 m-long YBCO tape was fabricated with high and uniform Ic performance throughout the tape by adopting the interim annealing before the conversion process. The effect of the interim annealing on the crystal growth mechanism of YBCO has been studied focusing on the relationship between the interim annealing conditions and delamination, in this work. Delamination strength was evaluated in the samples prepared with and without interim annealing by the stud pull method. Measurements were carried out on 50 different points for each sample and the results were analyzed statistically. The difference between the two samples was remarkably seen in the delamination strength below 60 MPa. The conventionally annealed sample had more points with low delamination strength below 60 MPa than the interim annealed one. The cross sectional images of both samples observed by SEM showed that there were few pores within the interim annealed superconducting layer, although conventional superconducting layer had many pores. These results suggest that the pores within YBCO layer might be origins to be propagated for delamination at low strength.

  11. Characteristics of electron beam evaporated nanocrystalline SnO2 thin films annealed in air

    International Nuclear Information System (INIS)

    Tin oxide (SnO2) thin films (about 200 nm thick) have been deposited by electron beam evaporation followed by annealing in air at 350-550 deg. C for two hours. Optical, electrical and structural properties were studied as a function of annealing temperature. The as-deposited film is amorphous, while all other annealed films are crystalline (having tetragonal structure). XRD suggest that the films are composed of nanoparticles of 5-10 nm. Raman analysis and optical measurements suggest quantum confinement effects that are enhanced with annealing temperature. For instance, Raman peaks of the as-deposited films are blue-shifted as compared to those for bulk SnO2. Blue shift becomes more pronounced with annealing temperature. Optical band gap energy of amorphous SnO2 film is 3.61 eV, which increases to about 4.22 eV after crystallization. Two orders of magnitude decrease in resistivity is observed after annealing at 350-400 deg. C due to structural ordering and crystallization. The resistivity, however, increases slightly with annealing temperature above 400 deg. C, possibly due to improvement in stoichiometry and associated decrease in charge carrier density.

  12. Annealing effect for SnS thin films prepared by high-vacuum evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Revathi, Naidu, E-mail: revathi.naidu@ttu.ee; Bereznev, Sergei; Loorits, Mihkel; Raudoja, Jaan; Lehner, Julia; Gurevits, Jelena; Traksmaa, Rainer; Mikli, Valdek; Mellikov, Enn; Volobujeva, Olga [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, Tallinn 19086 (Estonia)

    2014-11-01

    Thin films of SnS are deposited onto molybdenum-coated soda lime glass substrates using the high-vacuum evaporation technique at a substrate temperature of 300 °C. The as-deposited SnS layers are then annealed in three different media: (1) H{sub 2}S, (2) argon, and (3) vacuum, for different periods and temperatures to study the changes in the microstructural properties of the layers and to prepare single-phase SnS photoabsorber films. It is found that annealing the layers in H{sub 2}S at 400 °C changes the stoichiometry of the as-deposited SnS films and leads to the formation of a dominant SnS{sub 2} phase. Annealing in an argon atmosphere for 1 h, however, causes no deviations in the composition of the SnS films, though the surface morphology of the annealed SnS layers changes significantly as a result of a 2 h annealing process. The crystalline structure, surface morphology, and photosensitivity of the as-deposited SnS films improves significantly as the result of annealing in vacuum, and the vacuum-annealed films are found to exhibit promising properties for fabricating complete solar cells based on these single-phase SnS photoabsorber layers.

  13. Effect of prolonged annealing on the performance of coaxial Ge gamma-ray detectors

    International Nuclear Information System (INIS)

    The effects of prolonged annealing at elevated temperatures have been investigated in a 53cm3 closed-end coaxial high purity germanium detector in the reverse electrode configuration. The detector was multiply annealed at 1000C in block periods of 7 days. After each anneal cycle it was cooled to 77 K and the relative efficiency, peak channel location and FWHM energy resolution measured at 6 gamma-ray energies. At the present time, the detector has completed 16 anneal cycles. It was found that above ∼ 662 keV the photopeak efficiency decreased almost linearly at a rate of ∼ 1.5% per anneal cycle, although the energy resolution and centroid (and therefore charge collection efficiency) remained unchanged. The change in detection efficiency is attributed to the expansion of the inner n+ contact due to the thermal drive-in of Li ions into the bulk. The rate is found to follow a power-law dependence in agreement with that expected from Fick's diffusion laws. Using these data, we have derived a simple 1-D phenomenological model in which the n+ contact thickness is simply related to the Li diffusion length. For annealing at 1000C, the thickness of the n+ contact, d, as a function of the annealing time, t, can be described semi-empirically by d(mm) = 0.231 x t(days)1/2

  14. ACTIVITY-BASED COSTING DAN SIMULATED ANNEALING UNTUK PENCARIAN RUTE PADA FLEXIBLE MANUFACTURING SYSTEMS

    Directory of Open Access Journals (Sweden)

    Gregorius Satia Budhi

    2003-01-01

    Full Text Available Flexible Manufacturing System (FMS is a manufacturing system that is formed from several Numerical Controlled Machines combine with material handling system, so that different jobs can be worked by different machines sequences. FMS combine the high productivity and flexibility of Transfer Line and Job Shop manufacturing system. In this reasearch, Activity-Based Costing(ABC approach was used as the weight to search the operation route in the proper machine, so that the total production cost can be optimized. The search method that was used in this experiment is Simulated Annealling, a variant form Hill Climbing Search method. An ideal operation time to proses a part was used as the annealling schedule. From the empirical test, it could be proved that the use of ABC approach and Simulated Annealing to search the route (routing process can optimize the Total Production Cost. In the other hand, the use of ideal operation time to process a part as annealing schedule can control the processing time well. Abstract in Bahasa Indonesia : Flexible Manufacturing System (FMS adalah sistem manufaktur yang tersusun dari mesin-mesin Numerical Control (NC yang dikombinasi dengan Sistem Penanganan Material, sehingga job-job berbeda dikerjakan oleh mesin-mesin dengan alur yang berlainan. FMS menggabungkan produktifitas dan fleksibilitas yang tinggi dari Sistem Manufaktur Transfer Line dan Job Shop. Pada riset ini pendekatan Activity-Based Costing (ABC digunakan sebagai bobot / weight dalam pencarian rute operasi pada mesin yang tepat, untuk lebih mengoptimasi biaya produksi secara keseluruhan. Adapun metode Searching yang digunakan adalah Simulated Annealing yang merupakan varian dari metode searching Hill Climbing. Waktu operasi ideal untuk memproses sebuah part digunakan sebagai Annealing Schedulenya. Dari hasil pengujian empiris dapat dibuktikan bahwa penggunaan pendekatan ABC dan Simulated Annealing untuk proses pencarian rute (routing dapat lebih

  15. Annealing effect in structural and electrical properties of sputtered Mo thin film

    Energy Technology Data Exchange (ETDEWEB)

    Chelvanathan, P.; Zakaria, Z. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Yusoff, Y. [Department of Electrical, Electronic and System Engineering, FKAB, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Akhtaruzzaman, M. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Alam, M.M. [Advanced Materials Research Chair, Chemistry Department, College of Sciences, King Saud University, Riyadh 11451 (Saudi Arabia); Alghoul, M.A.; Sopian, K. [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Amin, N., E-mail: nowshadamin@yahoo.com [Solar Energy Research Institute, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Department of Electrical, Electronic and System Engineering, FKAB, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Advanced Materials Research Chair, Chemistry Department, College of Sciences, King Saud University, Riyadh 11451 (Saudi Arabia)

    2015-04-15

    Highlights: • We deposited Mo thin film by DC-sputtering for solar cell back contact application. • We examined the changes in the film quality in terms of structural, and electrical upon vacuum thermal annealing. • Vacuum thermal annealing at different temperature changes the degree of preferred orientation of (1 1 0) and (2 1 1) significantly. • Correlation of structural and electrical parameters was carried out. - Abstract: In this study, the effects of vacuum annealing on the structural and electrical properties of DC-sputtered molybdenum (Mo) thin films have been investigated. Mo thin films were deposited by DC sputtering and subsequently subjected to vacuum annealing in a tube furnace from 350 to 500 °C. Films that were deposited with different temperatures showed good adhesion with soda lime glass substrate after “tape testing”. X-ray diffraction (XRD) spectra have indicated existence of (1 1 0) and (2 1 1) orientations. However, I(1 1 0)/I(2 1 1) peak intensity ratio decreased for all vacuum annealed Mo films compared to as-sputtered films indicating change of preferential orientation. This suggests vacuum annealing can be employed to tailor the Mo thin film atomic packing density of the plane parallel to the substrate. SEM images of surface morphology clearly show compact and dense triangular like grains for as-sputtered film, while annealed films at 350 °C, 400 °C and 450 °C indicate rice-like grains. Stony grains with less uniformity were detected for films annealed for 500 °C. Meanwhile, electrical resistivity is insensitive to the vacuum annealing condition as all films showed more or less same resistivity in the range of 3 × 10{sup −5}–6 × 10{sup −5} Ω cm.

  16. Annealing effect in structural and electrical properties of sputtered Mo thin film

    International Nuclear Information System (INIS)

    Highlights: • We deposited Mo thin film by DC-sputtering for solar cell back contact application. • We examined the changes in the film quality in terms of structural, and electrical upon vacuum thermal annealing. • Vacuum thermal annealing at different temperature changes the degree of preferred orientation of (1 1 0) and (2 1 1) significantly. • Correlation of structural and electrical parameters was carried out. - Abstract: In this study, the effects of vacuum annealing on the structural and electrical properties of DC-sputtered molybdenum (Mo) thin films have been investigated. Mo thin films were deposited by DC sputtering and subsequently subjected to vacuum annealing in a tube furnace from 350 to 500 °C. Films that were deposited with different temperatures showed good adhesion with soda lime glass substrate after “tape testing”. X-ray diffraction (XRD) spectra have indicated existence of (1 1 0) and (2 1 1) orientations. However, I(1 1 0)/I(2 1 1) peak intensity ratio decreased for all vacuum annealed Mo films compared to as-sputtered films indicating change of preferential orientation. This suggests vacuum annealing can be employed to tailor the Mo thin film atomic packing density of the plane parallel to the substrate. SEM images of surface morphology clearly show compact and dense triangular like grains for as-sputtered film, while annealed films at 350 °C, 400 °C and 450 °C indicate rice-like grains. Stony grains with less uniformity were detected for films annealed for 500 °C. Meanwhile, electrical resistivity is insensitive to the vacuum annealing condition as all films showed more or less same resistivity in the range of 3 × 10−5–6 × 10−5 Ω cm

  17. Nd:YAG laser annealing investigation of screen-printed CIGS layer on PET: Layer annealing method for photovoltaic cell fabrication process

    KAUST Repository

    Alsaggaf, Ahmed

    2014-06-01

    Cu(In, Ga)Se2 (CIGS) ink was formulated from CIGS powder, polyvinyl butyral PVB, terpineol and polyester/polyamine co-polymeric dispersant KD-1. Thin films with different thicknesses were deposited on PET substrate using screen-printing followed by heat treatment using a Nd:YAG laser. The structure and morphology of the heated thin films were studied. The characterization of the CIGS powder, ink, and film was done using TGA, SEM, FIB, EDS, and XRD. TGA analysis shows that the CIGS ink is drying at 200 °C, which is well below the decomposition temperature of the PET substrate. It was observed by SEM that 20 pulses of 532nm and 60 mJ/cm2 Nd:YAG laser annealing causes atomic diffusion on the near surface area. Furthermore, FIB cross section images were utilized to monitor the effect of laser annealing in the depth of the layer. Laser annealing effects were compared to as deposited layer using XRD in reference to CIGS powder. The measurement shows that crystallinity of deposited CIGS is retained while EDS quantification and atomic ratio result in gradual loss of selenium as laser energy increases. The laser parameters were tuned in an effort to utilize laser annealing of screen-printed CIGS layer as a layer annealing method for solar cell fabrication process.

  18. Thermal Annealing of SiO2 Fabricated by Flame Hydrolysis Deposition

    Institute of Scientific and Technical Information of China (English)

    张乐天; 谢文法; 吴远大; 邢华; 李爱武; 郑伟; 张玉书

    2003-01-01

    Amorphous SiO2 films were fabricated on Si substrates by flame hydrolysis deposition as buffer layers applied in the planar optical waveguides. Then the Si wafers with the porous particles were put into electric furnace annealing at different temperatures for consolidation in air. The products were characterized by x-ray diffraction,x-ray photoelectron spectroscopy, atomic force microscopy, and variable angle spectroscopic ellipsometry. It was found that different structures at different annealing temperatures were obtained. When the annealing temperature arrives at 1400℃, SiO2 is continuous and dense and the refractive index at 1550nm is 1.4564, which is highly desirable.

  19. Study of phosphorus implanted and annealed silicon by electrical measurements and ion channeling technique

    CERN Document Server

    Hadjersi, T; Zilabdi, M; Benazzouz, C

    2002-01-01

    We investigated the effect of annealing temperature on the electrical activation of phosphorus implanted into silicon. The measurements performed using spreading resistance, four-point probe and ion channeling techniques have allowed us to establish the existence of two domains of variation of the electrical activation (350-700 deg. C) and (800-1100 deg. C). The presence of reverse annealing and the annihilation of defects have been put in a prominent position in the first temperature range. It has been shown that in order to achieve a complete electrical activation, the annealing temperature must belong to the second domain (800-1100 deg. C).

  20. Defects in Fast-Neutron Irradiated Nitrogen-Doped Czochralski Silicon after Annealing at High Temperature

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Fast-neutron irradiated nitrogen-doped Czochralski silicon (NCZ-Si) was annealed at 1100 ℃ for different time, then FTIR and optical microscope were used to study the behavior of oxygen. It is found that [Oi] increase at the early stage then decrease along with the increasing of anneal time. High density induced-defects can be found in the cleavage plane. By comparing NCZ-Si with Czochralski silicon (CZ-Si), [Oi] in NCZ-Si decrease more after anneal 24 h.

  1. Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

    Science.gov (United States)

    Marques, C.; Franco, N.; Alves, L. C.; da Silva, R. C.; Alves, E.; Safran, G.; McHargue, C. J.

    2007-04-01

    The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 × 1017 cm-2 at room temperature, followed by annealing at 1000 °C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.

  2. Synthesis of ZnO nanocrystals in sapphire by ion implantation and vacuum annealing

    Energy Technology Data Exchange (ETDEWEB)

    Marques, C. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Franco, N. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Alves, L.C. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal); Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Silva, R.C. da [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal) and Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal); Alves, E. [LFI, Dep. Fisica, Instituto Tecnologico e Nuclear, E.N. 10, 2686-953 Sacavem (Portugal) and Centro Fisica Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisbon (Portugal)]. E-mail: ealves@itn.pt; Safran, G. [Research Institute for Technical Physics and Materials Science, H-1525 Budapest (Hungary); McHargue, C.J. [University of Tennessee, Knoxville, TN 37996-0750 (United States)

    2007-04-15

    The synthesis of embedded ZnO nanoparticles in m-cut sapphire was achieved through high fluence Zn ion implantation, 0.9 x 10{sup 17} cm{sup -2} at room temperature, followed by annealing at 1000 deg. C in vacuum. In c-cut samples subjected to similar annealing conditions only buried precipitates of Zn form. TEM results in these samples show a high concentration of faceted precipitates distributed along the c-plane and the presence of Kirkendall voids distributed along the entire implanted region. In both cases a strong loss of Zn is observed upon annealing, which depends on the sapphire host orientation.

  3. Annealing Characteristics of ultra—thin high—K HfO2 gate dielectrics

    Institute of Scientific and Technical Information of China (English)

    韩德栋; 康晋锋

    2003-01-01

    Ultra-thin HfO2 gate-dielectric films were fabricated by ion-beam sputtering a sintered HfO2 target and subsequently annealed at different temperatures and atmospheres.We have studied the capacitance-voltage,current-voltage,and breakdon characteristics of the gate dielectrics.The results show that electrical characteristics of HfO2 gate dielectric are related to the annealing temperature.With increase annealing temperature,the largest value of capacitance decreases,the equivalent oxide thickness increases,the leakage current reduces,and the breakdown voltage decreases.

  4. Behaviors of optical and chemical state of Nb+ implanted sapphire after annealing

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The behavior of the radiation damage of sapphire crystal, produced by implantation with 380 keV Nb+ ion followed by annealing in a series of steps from 500 to 1100℃C at reducing atmosphere, was investigated in optical absorption and XPS measurements. It is found that the implanted niobium in sapphire is in different local environments with different chemical states after the annealing. The changes in optical density (OD) from the bands, based on the well known F-type centers, show that the annealing behavior of the radiation damage may be divided into different stages due to different mechanisms.

  5. Annealing characteristics of ultra-thin high-K HfO2 gate dielectrics

    Institute of Scientific and Technical Information of China (English)

    韩德栋; 康晋锋; 林长海; 韩汝琦

    2003-01-01

    Ultra-thin HfO2 gate-dielectric films were fabricated by ion-beam sputtering a sintered HfO2 target and subsequently annealed at different temperatures and atmospheres. We have studied the capacitance-voltage, current-voltage,and breakdown characteristics of the gate dielectrics. The results show that electrical characteristics of HfO2 gate dielectric are related to the annealing temperature. With increase annealing temperature, the largest value of capacitance decreases, the equivalent oxide thickness increases, the leakage current reduces, and the breakdown voltage decreases.

  6. PHASE TRANSFORMATION AND R–T CHARACTERISTICS OF VACUUM ANNEALED VANADIUM OXIDE THIN FILMS

    OpenAIRE

    Wang, Y.L.; Li, M. C.; L. C. ZHAO

    2008-01-01

    Polycrystalline vanadium oxide (VOx) thin films with mixed phases of V6O13 + VO2 (M) are deposited onto p-doped Si (100) substrates at 430°C using magnetron sputtering. By vacuum annealing on as-deposited VOx thin films at 450°C, at different annealing times we obtained nanoscale polycrystalline VOx thin films with two or more mixed phases. With the annealing time increasing, the phases of the films underwent the following transformation: V6O13 + VO2 (M) → VO2 (M) + VO2 (B) → VO2 (B) + VO2 (M...

  7. Improved thermal and strain performance of annealed polymer optical fiber Bragg gratings

    DEFF Research Database (Denmark)

    Yuan, Scott Wu; Stefani, Alessio; Bache, Morten;

    2011-01-01

    We report on a detailed study of the inscription and characterization of fiber Bragg gratings (FBGs) in commercial step index polymer optical fibers (POFs). Through the growth dynamics of the gratings, we identify the effect of UV-induced heating during the grating inscription. We found that FBGs...... in annealed commercial POFs can offer more stable short-term performance at both higher temperature and larger strain. Furthermore, the FBGs' operational temperature and strain range without hysteresis was extended by the annealing process. We identified long-term stability problem of even the annealed POF...

  8. XPS study of Rhodamine B doped PVA nanocomposite films as a function of annealing

    Science.gov (United States)

    Tripathi, J.; Tripathi, S.; Sharma, A.; Bisen, R.; Singh, J.

    2016-05-01

    The bonding properties of PVA thin films are explored as a function of annealing in pure and Rhodamine B doped self-standing films. X-ray photoelectron spectroscopy measurements have shown high quality, impurity free films, where the bonding is found between C and O elements in agreement with the standard data of polymers. Upon annealing, the bonds break and signals come only from elemental carbon and oxygen at their respective binding energy positions. The experiments are able to show that upon annealing at 65° C, all the bonds break and hence electronic properties are completely modified.

  9. Permeability spectra of neutron-irradiated and annealed amorphous FeCuNbSiB ribbons

    International Nuclear Information System (INIS)

    The neutron irradiation effects of soft magnetic properties in the as-quenched and the annealed amorphous Fe73.5Cu1Nb3Si13.5B9 alloys were studied by complex permeability spectra measurement. The annealing at 823 K caused the decrease of permeability from irreversible domain wall motion but increase the permeability from reversible magnetization, compared to the as-quenched sample. The neutron irradiation in the as-quenched sample increases the permeability from both irreversible and reversible magnetization processes. The neutron irradiation in the annealed sample showed the increase of permeability from irreversible domain wall motion, but decrease of permeability from reversible magnetization

  10. Optical, Electrical and Raman Properties of Annealed Hydrogenated Mg/Co Bilayer Thin Films

    OpenAIRE

    M Singh; S.P. Nehra; M.K. Jangid

    2011-01-01

    Bilayer Mg/Co thin films prepared using thermal evaporation method at pressure 10 – 5 torr at room temperature. The films were rapid thermal annealed (RTA) using halogen lamp for different times to get a homogeneous structure of Mg/Co thin films. The hydrogen gas was introduced in hydrogen chamber, where samples were kept at different pressure of H2 for thirty minutes. The UV–VIS transmission spectra of annealed and annealed hydrogenated films have been carried out at room temperature in the ...

  11. Precipitation and intercrystalline corrosion in high-nitrogen Cr-Mn steels after isothermal annealing

    International Nuclear Information System (INIS)

    Systematic investigation of the effect of nitrogen content and regimes of isothermal annealing on the tendency to intercrystalline corrosion of non-nickel Cr-Mn steels is carried out. Annealing has been conducted within 500-1000 deg C range with holding from 1 to 600 min. It is shown that optimal combination of resistance to intercrystalline corrosion and high mechanical properties is observed in non-nickel Cr-Mn steels at 0.5-0.6% nitrogen content after annealing at 900 and 1000 deg C, that is connected with absence of extractions on the boundaries of austenite grains

  12. Effects of annealing process on electrical conductivity and mechanical property of Cu-Te alloys

    Institute of Scientific and Technical Information of China (English)

    ZHU Da-chuan; TANG Ke; SONG Ming-zhao; TU Ming-jing

    2006-01-01

    The effects of annealing process on the electrical conductivity and mechanical properties of Cu-Te alloys were studied via AG-10TA electronic universal machine, SB2230 digital electric bridge, SEM and EDS. The results show that recrystallization and precipitation occur simultaneously during the annealing process of Cu-Te alloys. Tellurium precipitates as Cu2Te second phase. The grain size increases with the increasing of annealing temperature and time. The electrical conductivity increases monotonously. The tensile strength of Cu-Te alloy is higher than that of pure copper.

  13. Buckling and Delamination of Ti/Cu/Si Thin Film During Annealing

    Science.gov (United States)

    Lin, Qijing; Yang, Shuming; Jing, Weixuan; Li, Changsheng; Wang, Chenying; Jiang, Zhuangde; Jiang, Kely

    2014-09-01

    In this paper, the formation of buckling and delamination of sandwiched stacking of Ti/Cu/Si thin film are investigated. The crystallization structures, the composition of the Cu/Ti thin films, and the surface morphology are measured during annealing. The results show that the solid-phase reaction between Cu and Ti occurs at the interface. Buckling is initiated in the thin film annealed at 600°C. The volume expansion promotes the buckling and further produces microcracks. With increasing volume expansion, there are cavities formed in the middle layer when the annealing temperature is up to 700°C. Finally, thin film is delaminated from the substrate.

  14. Annealing Effect of Magnetostriction in Fe49Co49V2 Alloy

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    Research Institute of Industrial Science & Technology, P.O.Box 135 Pohang, 790-600, Korea A Fe49Co49V2 alloy was annealed at 500, 750, 800 and 900℃. The magnetostriction was measured by Michelson laser interferometer to receive the feedback signal of OPL variation. With the increase of annealing temperature, the grain size of texture in samples increases due to the recrystallization. Magnetostriction of 2× 10-6 at H=60 Oe increases up to 38 × 10-6 at annealing temperature of 900C, suggesting that the magnetostrictive characteristics are improved by the microstructural modification.

  15. Improved cost-effectiveness of the block co-polymer anneal process for DSA

    Science.gov (United States)

    Pathangi, Hari; Stokhof, Maarten; Knaepen, Werner; Vaid, Varun; Mallik, Arindam; Chan, Boon Teik; Vandenbroeck, Nadia; Maes, Jan Willem; Gronheid, Roel

    2016-04-01

    This manuscript first presents a cost model to compare the cost of ownership of DSA and SAQP for a typical front end of line (FEoL) line patterning exercise. Then, we proceed to a feasibility study of using a vertical furnace to batch anneal the block co-polymer for DSA applications. We show that the defect performance of such a batch anneal process is comparable to the process of record anneal methods. This helps in increasing the cost benefit for DSA compared to the conventional multiple patterning approaches.

  16. Annealed SnO{sub 2} thin films: Structural, electrical and their magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Mehraj, Sumaira, E-mail: sumairamehraj07@gmail.com [Department of Applied Physics, Aligarh Muslim University, Aligarh 202002 (India); Ansari, M. Shahnawaze, E-mail: shah.csengg@gmail.com [Center of Nanotechnology, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Alimuddin [Department of Applied Physics, Aligarh Muslim University, Aligarh 202002 (India)

    2015-08-31

    SnO{sub 2} thin films of ~ 150 nm thicknesses were deposited on quartz substrate by pulse laser deposition technique and annealed at 600–900 °C for 1 h with a variation of 100 °C per sample. The X-ray diffraction patterns show that as deposited SnO{sub 2} thin film was completely amorphous while annealed SnO{sub 2} thin films were randomly oriented, polycrystalline in nature and correspond to the rutile phase. The average crystallite size estimated using Scherrer and Williamson–Hall equations was found to increase with annealing temperature. In addition to the three fundamental Raman peaks at 473 cm{sup −1}, 627 cm{sup −1} and 766 cm{sup −1} corresponding to the tetragonal rutile phase of SnO{sub 2}, two IR active Raman bands and one Raman forbidden mode were also observed at 500 cm{sup −1}, 690 cm{sup −1} and 544 cm{sup −1} respectively. The dc resistivity measurements in the temperature range of 297–400 K show semiconducting behavior of all the annealed thin films. Room temperature dielectric properties of all the samples show dispersion which is explained in the light of Koop's theory based on Maxwell–Wagner two layer models. The dielectric parameters: real part of dielectric constant, dielectric loss and ac conductivity show their maximum value for SnO{sub 2} film sample annealed at 600 °C. The dielectric loss shows anomalous behavior and exhibits relaxation peaks (Debye peaks) at lower and middle frequencies. Complex impedance plots (Nyquist plots) for annealed SnO{sub 2} thin films show two well-resolved semicircles corresponding to two different electrical transport mechanisms which stand for grain and grain boundary. It is observed that the contribution of grains in the conduction process starts dominating over the grain boundary with the increase in annealing temperature. From a magnetic hysteresis loop, it is clear that all the single phase SnO{sub 2} thin films annealed at different temperatures are ferromagnetic at room

  17. Investigation of radiaiton defect annealing in LiF by chemiluminescence and thermostimulated luminescence

    International Nuclear Information System (INIS)

    To study radiation defect properties in LiF by simultaneously measured chemi- and thermoluminescence and to prove their regularity, the samples were exposed to gamma-radiation of 60Co with the dose of 1 Mrad/hour. Then the samples were annealed at 100-400 deg C. Dependence of chemi- and thermoluminescence and F-centre concentration on the annealing temperature have been investigated. Those dependences are found to be interrelated. Chemiluminescence intensity change (according to the growth of the annealing temperature for the crystals with a great number of associated electron centres at a high radiation dose) is proved to be caused by the radiation defect clustering

  18. Investigation of Nano Structural Changes by Annealing Temperature and Uniform Oxygen Flow on Ti Layers

    Directory of Open Access Journals (Sweden)

    Haleh Kangarlou

    2011-01-01

    Full Text Available Problem statement: Ti films of the same thickness, deposition angle (near normal and deposition rate were deposited on glass substrates at room temperature under UHV conditions. Approach: Different annealing temperatures 423 K, 523 K and 623 K with uniform 7 cm3 sec-1, oxygen flow, were used to produce titanium oxide layers. Results: Thin film structures were studied using AFM, XRD and spectrophotometer methods. Roughness of the films changed due to annealing process. Conclusion/Recommendations: The getting property of Ti and annealing temperature can play an important role on the structure of the films.

  19. Morphological, thermal and annealed microhardness characterization of gelatin based interpenetrating networks of polyacrylonitrile: A hard biopolymer

    Indian Academy of Sciences (India)

    Sangita Rajvaidya; R Bajpai; A K Bajpai

    2005-10-01

    The present paper reports the preparation of full IPNs of gelatin and polyacrylonitrile. Various compositions of gluteraldehyde crosslinked gelatin and N,N′-methylene-bis-acrylamide crosslinked PAN were characterized by SEM and DSC techniques. The IPNs were also thermally pretreated by the annealing process. The effects of annealing temperature on the microhardness of IPNs were studied using the Vickers method. SEM indicates the homogeneous morphological features for IPN. The role of gelatin, AN and crosslinker on the developed hard biopolymer has been described with the help of DSC thermograms and microhardness measurements of annealed specimens and good correlation is observed.

  20. Effect of Anneal on the Release Behaviour of LY12-Al Alloy

    Institute of Scientific and Technical Information of China (English)

    HU Jian-Bo; YU Yu-Ying; TAN Hua; DAI Cheng-Da

    2006-01-01

    @@ The sound velocities along the release path of annealed LY12-Al are measured by using a velocity interferometer system for any reflector (VISAR) technique. The shear modulus and yield strength are then obtained. Comparison of the experimental results with those of unannealed LY12-Al shows that anneal has little influence on sound velocities and shear modulus though it weakens the yield strength considerably, and changes the dependence of yield strength upon shock stress. The ratio of shear modulus to yield strength of unannealed LY12-Al increases with shock stress monotonically while that of annealed LY12-Al exhibits much more complicated behaviour.

  1. Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

    DEFF Research Database (Denmark)

    Shayesteh, Maryam; O' Connell, Dan; Gity, Farzan;

    2014-01-01

    In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n +/p junctions. Using LTA, high carrier...... implant conditions. On the other hand, RTA revealed very high I on/I off ratio ∼ 107 and n ∼ 1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance....

  2. Effects of annealing on cold-worked Zr3Al

    International Nuclear Information System (INIS)

    A study has been made of the effects of isothermal annealing on the hardness, the tensile properties and the microstructure of cold-worked Zr3Al (L12 type). For material rolled to a true strain of 0.29, complete recrystallization accounts for a recovery of hardness of 65 to 70 percent and for a reduction in yield strength of about 50 percent, independent of temperature. Grain growth accounts for further changes. The yield strength sigma/sub y/ obeys the relationship sigma/sub y/ = sigma0 + k/sub y/(anti d)/sup -1/2/ where sigma0 and k/sub y/ are constants and anti d is the average grain diameter of the fully recrystallized matrix. Recrystallization and grain growth kinetics, respectively, satisfy the expressions f = 1 -- exp(--kt/sup n/) and anti d = Kt/sup m/ where f is the fraction recrystallized, t is time, k and K are parameters which increase with increasing temperature and m and n are constants. 13 figures

  3. Static Security Enhancement and Loss Minimization Using Simulated Annealing

    Directory of Open Access Journals (Sweden)

    A.Y. Abdelaziz

    2013-03-01

    Full Text Available This paper presents a developed algorithm for optimal placement of thyristor controlled series capacitors (TCSC’s for enhancing the power system static security and minimizing the system overall power loss. Placing TCSC’s at selected branches requires analysis of the system behavior under all possible contingencies. A selective procedure to determine the locations and settings of the thyristor controlled series capacitors is presented. The locations are determined by evaluating contingency sensitivity index (CSI for a given power system branch for a given number of contingencies. This criterion is then used to develop branches prioritizing index in order to rank the system branches possible for placement of the thyristor controlled series capacitors. Optimal settings of TCSC’s are determined by the optimization technique of simulated annealing (SA, where settings are chosen to minimize the overall power system losses. The goal of the developed methodology is to enhance power system static security by alleviating/eliminating overloads on the transmission lines and maintaining the voltages at all load buses within their specified limits through the optimal placement and setting of TCSC’s under single and double line outage network contingencies. The proposed algorithm is examined using different IEEE standard test systems to shown its superiority in enhancing the system static security and minimizing the system losses.

  4. Impurity and defect interactions during laser thermal annealing in Ge

    Science.gov (United States)

    Milazzo, R.; Impellizzeri, G.; Piccinotti, D.; La Magna, A.; Fortunato, G.; De Salvador, D.; Carnera, A.; Portavoce, A.; Mangelinck, D.; Privitera, V.; Napolitani, E.

    2016-01-01

    The microscopic mechanisms involving dopants, contaminants, and defects in Ge during pulsed melting laser thermal annealing (LTA) are investigated in detail. Samples both un-implanted and implanted with As or B are processed by LTA as well as characterized in terms of chemical (1D and 3D), electrical, and strain profiling. The clustering of As is directly measured by 3D chemical profiling and correlated with its partial electrical activation along with a reduction of the lattice strain induced by As atoms. A semi-quantitative microscopic model involving the interaction with mobile As-vacancy (AsV) complexes is proposed to describe the clustering mechanism. Boron is shown to follow different clustering behavior that changes with depth and marked by completely different strain levels. Oxygen penetrates from the surface into all the samples as a result of LTA and, only in un-implanted Ge, it occupies an interstitial position inducing also positive strain in the lattice. On the contrary, data suggest that the presence of As or B forces O to assume different configurations with negligible strain, through O-V or O-B interactions for the two dopant species, respectively. These data suggest that LTA does not inject a significant amount of vacancies in Ge, at variance with Si, unless As atoms or possibly other n-type dopants are present. These results have to be carefully considered for modeling the LTA process in Ge and its implementation in technology.

  5. Application of Simulated Annealing and Related Algorithms to TWTA Design

    Science.gov (United States)

    Radke, Eric M.

    2004-01-01

    Simulated Annealing (SA) is a stochastic optimization algorithm used to search for global minima in complex design surfaces where exhaustive searches are not computationally feasible. The algorithm is derived by simulating the annealing process, whereby a solid is heated to a liquid state and then cooled slowly to reach thermodynamic equilibrium at each temperature. The idea is that atoms in the solid continually bond and re-bond at various quantum energy levels, and with sufficient cooling time they will rearrange at the minimum energy state to form a perfect crystal. The distribution of energy levels is given by the Boltzmann distribution: as temperature drops, the probability of the presence of high-energy bonds decreases. In searching for an optimal design, local minima and discontinuities are often present in a design surface. SA presents a distinct advantage over other optimization algorithms in its ability to escape from these local minima. Just as high-energy atomic configurations are visited in the actual annealing process in order to eventually reach the minimum energy state, in SA highly non-optimal configurations are visited in order to find otherwise inaccessible global minima. The SA algorithm produces a Markov chain of points in the design space at each temperature, with a monotonically decreasing temperature. A random point is started upon, and the objective function is evaluated at that point. A stochastic perturbation is then made to the parameters of the point to arrive at a proposed new point in the design space, at which the objection function is evaluated as well. If the change in objective function values (Delta)E is negative, the proposed new point is accepted. If (Delta)E is positive, the proposed new point is accepted according to the Metropolis criterion: rho((Delta)f) = exp((-Delta)E/T), where T is the temperature for the current Markov chain. The process then repeats for the remainder of the Markov chain, after which the temperature is

  6. Simulated Annealing Technique for Routing in a Rectangular Mesh Network

    Directory of Open Access Journals (Sweden)

    Noraziah Adzhar

    2014-01-01

    Full Text Available In the process of automatic design for printed circuit boards (PCBs, the phase following cell placement is routing. On the other hand, routing process is a notoriously difficult problem, and even the simplest routing problem which consists of a set of two-pin nets is known to be NP-complete. In this research, our routing region is first tessellated into a uniform Nx×Ny array of square cells. The ultimate goal for a routing problem is to achieve complete automatic routing with minimal need for any manual intervention. Therefore, shortest path for all connections needs to be established. While classical Dijkstra’s algorithm guarantees to find shortest path for a single net, each routed net will form obstacles for later paths. This will add complexities to route later nets and make its routing longer than the optimal path or sometimes impossible to complete. Today’s sequential routing often applies heuristic method to further refine the solution. Through this process, all nets will be rerouted in different order to improve the quality of routing. Because of this, we are motivated to apply simulated annealing, one of the metaheuristic methods to our routing model to produce better candidates of sequence.

  7. Impurity and defect interactions during laser thermal annealing in Ge

    Energy Technology Data Exchange (ETDEWEB)

    Milazzo, R., E-mail: ruggero.milazzo@unipd.it; De Salvador, D.; Carnera, A.; Napolitani, E. [CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, 35131 Padova (Italy); Impellizzeri, G.; Privitera, V. [CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania (Italy); Piccinotti, D. [CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, 35131 Padova (Italy); IM2NP, CNRS-Universités d' Aix-Marseille et de Toulon, Case 142, 13397 Marseille Cedex 20 (France); La Magna, A. [CNR-IMM, Z.I. VIII Strada 5, 95121 Catania (Italy); Fortunato, G. [CNR-IMM, Via del Fosso del Cavaliere 100, 00133 Roma (Italy); Portavoce, A.; Mangelinck, D. [IM2NP, CNRS-Universités d' Aix-Marseille et de Toulon, Case 142, 13397 Marseille Cedex 20 (France)

    2016-01-28

    The microscopic mechanisms involving dopants, contaminants, and defects in Ge during pulsed melting laser thermal annealing (LTA) are investigated in detail. Samples both un-implanted and implanted with As or B are processed by LTA as well as characterized in terms of chemical (1D and 3D), electrical, and strain profiling. The clustering of As is directly measured by 3D chemical profiling and correlated with its partial electrical activation along with a reduction of the lattice strain induced by As atoms. A semi-quantitative microscopic model involving the interaction with mobile As-vacancy (AsV) complexes is proposed to describe the clustering mechanism. Boron is shown to follow different clustering behavior that changes with depth and marked by completely different strain levels. Oxygen penetrates from the surface into all the samples as a result of LTA and, only in un-implanted Ge, it occupies an interstitial position inducing also positive strain in the lattice. On the contrary, data suggest that the presence of As or B forces O to assume different configurations with negligible strain, through O-V or O-B interactions for the two dopant species, respectively. These data suggest that LTA does not inject a significant amount of vacancies in Ge, at variance with Si, unless As atoms or possibly other n-type dopants are present. These results have to be carefully considered for modeling the LTA process in Ge and its implementation in technology.

  8. Laser Zone Annealing - Accelerated Route to Self-Assembled Nanostructures

    Science.gov (United States)

    Majewski, Pawel; Yager, Kevin; Rahman, Atikur; Black, Charles

    We present Laser Zone Annealing - a novel technique of accelerated self-assembly of block copolymer thin films utilizing laser light. In our approach, the laser beam, focused to a narrow line, is rastered across the polymer film coated on the light-absorbing substrate, inducing rapid and highly localized temperature transients in the film. By coupling our method with soft-shear, we demonstrate monolithic alignment of various cylinder-forming block copolymers over extremely short timescales. We utilize the aligned block copolymer films as templates for inorganic nanomaterials pattering. After delivery of inorganic precursors via aqueous or gaseous route, the polymer matrix is ashed leading to extremely well-ordered arrays of inorganic, metallic or semiconducting nanowires. Subsequently, we demonstrate how more complex nanostructures can be created with LZA including multilayered nanomeshes with symmetries beyond the conventional motifs accessible by native block copolymers. We investigate a perspective use of the inorganic arrays as transparent conductors or chemical sensors and characterize their anisotropic electro-optical properties. Research carried out in part at the Center for Functional Nanomaterials, Brookhaven National Laboratory, which is supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-98CH10886.

  9. Traveling Salesman Approach for Solving Petrol Distribution Using Simulated Annealing

    Directory of Open Access Journals (Sweden)

    Zuhaimy Ismail

    2008-01-01

    Full Text Available This research presents an attempt to solve a logistic company's problem of delivering petrol to petrol station in the state of Johor. This delivery system is formulated as a travelling salesman problem (TSP. TSP involves finding an optimal route for visiting stations and returning to point of origin, where the inter-station distance is symmetric and known. This real world application is a deceptive simple combinatorial problem and our approach is to develop solutions based on the idea of local search and meta-heuristics. As a standard problem, we have chosen a solution is a deceptively simple combinatorial problem and we defined it simply as the time spends or distance travelled by salesman visiting n cities (or nodes cyclically. In one tour the vehicle visits each station just once and finishes up where he started. As standard problems, we have chosen TSP with different stations visited once. This research presents the development of solution engine based on local search method known as Greedy Method and with the result generated as the initial solution, Simulated Annealing (SA and Tabu Search (TS further used to improve the search and provide the best solution. A user friendly optimization program developed using Microsoft C++ to solve the TSP and provides solutions to future TSP which may be classified into daily or advanced management and engineering problems.

  10. Ionization annealing of semiconductor crystals. Part two: the experiment

    Directory of Open Access Journals (Sweden)

    Garkavenko A. S.

    2014-12-01

    Full Text Available There is a conception that irradiation of semiconductor crystals with high energy electrons (300 keV results in a significant and irreversible deterioration of their electrical, optical and structural properties. Semiconductors are typically irradiated by low voltage electron accelerators with a continuous flow, the current density in such accelerators is 10–5—10–6 A/cm2, the energy — 0,3—1 MeV. All changes in the properties after such irradiation are resistant at room temperature, and marked properties recovery to baseline values is observed only after prolonged heating of the crystals to a high temperature. In contrast, the authors in their studies observe an improvement of the structural properties of semiconductor crystals (annealing of defects under irradiation with powerful (high current pulsed electron beams of high energy (E0 = 0,3–1 MeV, t = 0,1—10 ns, Ω = 1—10 Hz, j = 20—300 A/cm2. In their previous paper, the authors presented theoretical basis of this effect. This article describes an experimental study on the influence of high-current pulsed electron beams on the optical homogeneity of semiconductor GaAs and CdS crystals, confirming the theory put forward earlier.

  11. Optical Design of Multilayer Achromatic Waveplate by Simulated Annealing Algorithm

    Institute of Scientific and Technical Information of China (English)

    Jun Ma; Jing-Shan Wang; Carsten Denker; Hai-Min Wang

    2008-01-01

    We applied a Monte Carlo method-simulated annealing algorithm-to carry out the design of multilayer achromatic waveplate. We present solutions for three-, six-and ten-layer achromatic waveplates. The optimized retardance settings are found to be 89°51'39"±0°33'37" and 89°54'46"±0°22'4" for the six-and ten-layer waveplates, respectively, for a wavelength range from 1000nm to 1800nm. The polarimetric properties of multilayer waveplates are investigated based on several numerical experiments. In contrast to previously proposed three-layer achromatic waveplate, the fast axes of the new six-and ten-layer achromatic waveplate remain at fixed angles, independent of the wavelength. Two applications of multilayer achromatic waveplate are discussed, the general-purpose phase shifter and the birefringent filter in the Infrared Imaging Magnetograph (IRIM) system of the Big Bear Solar Observatory (BBSO). We also checked an experimental method to measure the retardance of waveplates.

  12. Efficient Hand off using Fuzzy and Simulated Annealing

    Directory of Open Access Journals (Sweden)

    Vikas.M.N

    2012-02-01

    Full Text Available This paper presents an efficient method for the hand off mechanism in cellular networks using optimization algorithms. The proposed approach integrates a fuzzy logic approach with simulated annealing algorithm to automate the tuning process. The fuzzy controller carries out inference operation at high-speed, whereas the tuning procedure works at a much lower rate. For the implementation described in this paper, a two-input-one-output fuzzy controller is considered. Both the inputs and the output have 8- bit resolution, and up to seven membership functions for each input or output can be defined over the universe of discourse. The fuzzy controller has two levels of pipeline which allows overlapping of the arithmetic as well as inference operations. The SA tuning mechanism adjusts the triangular or singleton membership functions to minimize a cost function. The complete self-tuned fuzzy inference engine is implemented in a Xilinx SPARTAN3 XC3S200 series FPGA device. This paper describes various aspects of the implementation of the self-tuned hand off system.

  13. Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

    Science.gov (United States)

    van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

    2016-09-01

    We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

  14. Effect of annealing on the mechanical and scratch properties of BCN films obtained by magnetron sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Shuyan, E-mail: xsynefu@126.com [Key Laboratory of Forest Sustainable Management and Environmental Microorganism Engineering of Heilongjiang Province, Northeast Forestry University, Harbin 150040 (China); Ma, Xinxin [School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wen, Huiying [Key Laboratory of Forest Sustainable Management and Environmental Microorganism Engineering of Heilongjiang Province, Northeast Forestry University, Harbin 150040 (China); Tang, Guangze [School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Li, Chunwei [Key Laboratory of Forest Sustainable Management and Environmental Microorganism Engineering of Heilongjiang Province, Northeast Forestry University, Harbin 150040 (China)

    2014-09-15

    Highlights: • The amorphous BCN films were annealed at different temperatures under vacuum condition. • The order degree increases with the annealing temperature increasing, and the films do not decompose even the annealing temperature rise to 1000 °C. • The nano-hardness and modulus of the films decrease with the increasing of annealing temperatures. • The critical load of BCN films is not affected by the annealing temperature, and the films have good interfacial adhesion. • The scratch resistance properties of BCN film are improved by annealing at 600 °C. - Abstract: Boron-carbon-nitride (BCN) films have been fabricated by direct current unbalanced magnetron sputtering. Boron carbide/graphite compound and a mixture of nitrogen and argon are used as target and carrier gas, respectively, during BCN synthesis. The obtained BCN films are annealed at different temperatures under vacuum condition. The effect of annealing temperature on the structure, mechanical properties and scratch behavior of the BCN films has been investigated. The results indicate that no decomposition products are found even the BCN films are annealed at 1000 °C. The hardness and elastic modulus of the films decrease with the increase of annealing temperatures. The BCN film annealed at 600 °C has the strongest scratch resistance. The friction coefficient of all BCN films is in range of 0.05 to 0.15.

  15. Impact of thermal annealing on optical properties of vacuum evaporated CdTe thin films for solar cells

    Science.gov (United States)

    Chander, Subhash; Purohit, A.; Lal, C.; Nehra, S. P.; Dhaka, M. S.

    2016-05-01

    In this paper, the impact of thermal annealing on optical properties of cadmium telluride (CdTe) thin films is investigated. The films of thickness 650 nm were deposited on thoroughly cleaned glass substrate employing vacuum evaporation followed by thermal annealing in the temperature range 250-450 °C. The as-deposited and annealed films were characterized using UV-Vis spectrophotometer. The optical band gap is found to be decreased from 1.88 eV to 1.48 eV with thermal annealing. The refractive index is found to be in the range 2.73-2.92 and observed to increase with annealing treatment. The experimental results reveal that the thermal annealing plays an important role to enhance the optical properties of CdTe thin films and annealed films may be used as absorber layer in CdTe/CdS solar cells.

  16. Effects of optical interference and annealing on the performance of poly (3-hexylthiophene):fullerene based solar cells

    Institute of Scientific and Technical Information of China (English)

    You Hai-Long; Zhang Chun-Fu

    2009-01-01

    In this paper, the effects of optical interference and annealing on the performance of P3HT:PCBM based organic solar cells are studied in detail. Due to the optical interference effect, short circuit current density (JSC) shows obvious oscillatory behaviour with the variation of active layer thickness. With the help of the simulated results, the devices are optimized around the first two optical interference peaks. It is found that the optimized thicknesses are 80 and 208 nm. The study on the effect of annealing on the performance indicates that post-annealing is more favourable than pre-annealing. Based on post-annealing, different annealing temperatures are tested. The optimized annealing condition is 160℃ for 10 min in a nitrogen atmosphere. The device shows that the open circuit voltage VOC achieves about 0.65V and the power conversion efficiency is as high as 4.0 % around the second interference peak.

  17. Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation

    Directory of Open Access Journals (Sweden)

    Heajeong Cheong

    2015-06-01

    Full Text Available We fabricated solution-processed indium–gallium–zinc oxide (IGZO thin-film transistors (TFTs by microwave (MW annealing an IGZO precursor film followed by irradiating with vacuum ultraviolet (VUV light. MW annealing allows more rapid heating of the precursor film than conventional annealing processes using a hot plate or electric oven and promotes the crystallization of IGZO. VUV irradiation was used to reduce the duration and temperature of the post-annealing step. Consequently, the IGZO TFTs fabricated through MW annealing for 5 min and VUV irradiation for 1 min exhibited an on/off current ratio of 108 and a field-effect mobility of 0.3 cm2 V−1 s−1. These results indicate that MW annealing and photoirradiation is an effective combination for annealing solution processed IGZO precursor films to prepare the semiconductor layers of TFTs.

  18. Precipitation of Fe and Si in cold rolled Al-Fe-Si sheet during annealing

    International Nuclear Information System (INIS)

    The aim of this present work is to make clear the precipitation behavior of Fe and Si in cold rolled commercial pure aluminum sheet during annealing, especially on the phases and on the effects of prior cold rolling

  19. Post annealing performance evaluation of printable interdigital capacitive sensors by principal component analysis

    KAUST Repository

    Zia, Asif Iqbal

    2015-06-01

    The surface roughness of thin-film gold electrodes induces instability in impedance spectroscopy measurements of capacitive interdigital printable sensors. Post-fabrication thermodynamic annealing was carried out at temperatures ranging from 30 °C to 210 °C in a vacuum oven and the variation in surface morphology of thin-film gold electrodes was observed by scanning electron microscopy. Impedance spectra obtained at different temperatures were translated into equivalent circuit models by applying complex nonlinear least square curve-fitting algorithm. Principal component analysis was applied to deduce the classification of the parameters affected due to the annealing process and to evaluate the performance stability using mathematical model. Physics of the thermodynamic annealing was discussed based on the surface activation energies. The post anneal testing of the sensors validated the achieved stability in impedance measurement. © 2001-2012 IEEE.

  20. A stably enhanced transparent conductive graphene film obtained using an air-annealing method

    Science.gov (United States)

    Song, Xuefen; Wei, Dapeng; Sun, Tai; Yu, Leyong; Yang, Jun; Zhang, Yongna; Fang, Liang; Wei, Dacheng; Shi, Haofei; Du, Chunlei

    2016-08-01

    A simple and effective air-annealing technique was developed to stably improve both the electrical conductivity and light transmission of pristine graphene. After the graphene film was annealed in air at 250 °C for 80 min, the mobility and carrier concentration were both significantly enhanced, and the sheet resistance was greatly reduced with a decrease rate of ∼33%. Meanwhile, the transparency was also improved by more than 3%. The mechanism is carefully discussed. The reason might be that air-annealing conditions provide a suitable atmosphere to etch and remove amorphous carbons. More importantly, the enhanced transparent conductive properties of the air-annealed graphene films were extraordinarily stable, and remained almost unchanged for 100 days.

  1. CO2 laser annealing of 50-microns-thick silicon solar cells

    Science.gov (United States)

    Walker, F. E.

    1979-01-01

    A test program is conducted to determine thin solar cell annealing effects using a laser energy source. A CO2 continuous-wave laser was used in annealing experiments on 50 micrometers-thick silicon solar cells after proton irradiation. Test cells were irradiated to a fluence of 1.0 x 10 to the 12th power protons/sq cm with 1.9 MeV protons. After irradiation, those cells receiving full proton dosage were degraded by an average of 30% in output power. In annealing tests laser beam exposure times on the solar cell varied from 2 seconds to 16 seconds reaching cell temperatures of from 400 C to 500 C. Under those conditions annealing test results showed recovery in cell output power of from 33% to 90%.

  2. Influence of annealing on the optical properties of vacuum deposited silver thin films

    Science.gov (United States)

    Gnanadurai, P.; Sivaraja, N.; Soundrarajan, N.; Vijayan, C.

    2015-06-01

    Thin Silver films of thickness 15nm were prepared by thermal evaporation on well cleaned glass substrates at room temperature at a pressure of 2×10-5 mbar with the deposition rate of 0.01À/sec and annealed in air for an hour at temperatures between 300°c and 400°c. The prepared films were characterized by X-ray diffraction (XRD), UV-visible spectroscopy and AFM. The mean grain size of the film at different annealing temperatures was determined by the X-ray diffraction pattern by using Scheer's formula. It is found that from absorbance studies surface Plasmon peak position decreases as the annealing temperature increases and blue shifted. And also from transmittance studies the thermal effect of silver film strongly affects the optical transmittance. From AFM studies the average particle size and RMS surface roughness increase with increase of annealing temperatures.

  3. The origin of GEMS in IDPs as deduced from microstructural evolution of amorphous silicates with annealing

    CERN Document Server

    Davoisne, C; Leroux, H; D'Hendecourt, L B; Jones, A; Deboffle, D

    2006-01-01

    We present laboratory studies of the micro-structural evolution of an amorphous ferro-magnesian silicate, of olivine composition, following thermal annealing under vacuum. Annealing under vacuum was performed at temperatures ranging from 870 to 1020 K. After annealing spheroidal metallic nano-particles (2-50 nm) are found within the silicate films. We interpret this microstructure in terms of a reduction of the initial amorphous silicate FeO component, because of the carbon-rich partial pressure in the furnace due to pumping mechanism. Annealing in a controlled oxygen-rich atmosphere confirms this interpretation. The observed microstructures closely resemble those of the GEMS (Glass with Embedded Metal and Sulphides) found in chondritic IDPs (Interplanetary Dust Particles). Since IDPs contain abundant carbonaceous matter, a solid-state reduction reaction may have occurred during heating in the hot inner regions of the proto-solar disc. Related to this, the presence of forsterite grains grown from the amorphou...

  4. On the analysis of the activation mechanisms of sub-melt laser anneals

    DEFF Research Database (Denmark)

    Clarysse, T.; Bogdanowicz, J.; Goosens, J.;

    2008-01-01

    In order to fabricate carrier profiles with a junction depth (15 nm) and sheet resistance value suited for sub-32 nm Si-CMOS technology, the usage of sub-melt laser anneal is a promising route to explore. As laser annealed junctions seem to outperform standard anneal approaches, a detailed...... assessment of the basics of laser induced activation seem appropriate. In this work the electrical activation is studied from a comparison between the dopant profiles as measured by Secondary Ion Mass Spectrometry, and the electrically active fraction as extracted from sheet resistance and mobility...... electrically active concentration level as well as the concurrent mobility is dependent on the dopant concentration level. This implies that the activation of B through the laser anneal process in the explored temperature–time space is governed by kinetic processes (i.e. the dissolution of B–I pairs...

  5. Annealing effect on variation of deformation and fracture features in metallic glass under local loading

    International Nuclear Information System (INIS)

    Change in the crack resistance, plasticity and structure of the 82K3KhSR (83.7% Co + 3.7% Fe + 3.2% Cr + 9.4% Si) metallic glass by annealing is studied. The method for evaluating mechanical properties and structural state of metallic glasses based on indenting the metallic glass deposited on the substrate from the polyether material and metal is proposed. The annealing critical temperature corresponding to the beginning of essential changes in the metallic glass mechanical properties is determined. The linear character of dependences of the metallic glass resistance on the indenter loading for the annealing temperatures higher than the critical one is established. The exponential decrease in the crack resistance by indenting due to increase in the metallic glass annealing temperature is determined

  6. Annealing displacement damage in GaAs LEDs: another Galileo success story

    Science.gov (United States)

    Swift, G. M.; Levanas, G. C.; Ratliff, J. M.; Johnston, A. H.

    2003-01-01

    A recent failure of Galileo's magnetic recorder was identified as LED degradation. Annealing the culprit OP133s proved successful and the irreplaceable data was recovered. Test data and modeling results calibrate an understanding of this incident.

  7. Annealing behaviour of a nanostructured Cu–45 at.%Ni alloy

    DEFF Research Database (Denmark)

    Tian, Hui; Suo, H. L.; Mishin, Oleg;

    2013-01-01

    The microstructure and crystallographic texture have been investigated in a Cu–45 at.%Ni alloy after heavy rolling and subsequent annealing at different temperatures. Cold-rolling to a von Mises strain of 5.7 produced a sample with an average boundary spacing along the normal direction of ~70 nm...... and a large fraction of high-angle boundaries (HABs), ~70 %. Annealing of this sample for 1 h at temperatures ≤450 °C causes structural coarsening, during which the fraction of HABs decreases. Annealing at higher temperatures results in pronounced discontinuous recrystallization accompanied by...... twinning. Large frequencies of twin boundaries contribute to high HAB fractions measured in the as-recrystallized condition. Cube-oriented grains demonstrate a size advantage compared to grains of other orientations, thus creating a strong cube texture in the recrystallized material. Further annealing of...

  8. Annealing Effects on Creep and Rupture of Polycrystalline Alumina-Based Fibers

    Science.gov (United States)

    Goldsby, J. C.; Yun, H. M.; Morscher, G. N.; DiCarlo, J. A.

    1998-01-01

    Continuous-length polycrystalline aluminum-oxide-based fibers are being considered as reinforcements for advanced high-temperature composite materials. For these fine-grained fibers, basic issues arise concerning grain growth and microstructural instability during composite fabrication and the resulting effects on the fiber's thermo-mechanical properties. To examine these issues, commercially available Nextel 610 (alumina) and Altex (alumina-silica) fibers were annealed at 1100 and 1300 C for up to 100 hr in air. Changes in fiber microstructure, fiber tensile creep, stress rupture, and bend stress relaxation (BSR) that occurred with annealing were then determined. BSR tests were also used to compare as-received and annealed fibers to other polycrystalline oxide fibers. Annealing was shown to have a significant effect, particularly on the Altex fiber, and caused it to have increased creep resistance.

  9. Analysis of Li-related defects in ZnO thin films influenced by annealing ambient

    Indian Academy of Sciences (India)

    Bing Wang; Lidan Tang

    2014-02-01

    Li-doped ZnO thin films were grown on quartz substrates by radio frequency magnetron sputtering and in situ annealing under O2 or Ar ambient. Li-related defects in ZnO films strongly depend on the annealing ambient. AFM and XRD indicated that ZnO films possessed a good crystallinity with -axis orientation, uniform thickness and dense surface. Electrical and optical properties demonstrated that, an amount of LiZn defect had existed in ZnO annealed under O2 ambient and an amount of Lii(o) defect had existed in ZnO annealed under Ar ambient. First-principle calculations were performed to calculate formation energies of Li-doped ZnO in order to explain the formation mechanism of Li-related defects in ZnO.

  10. Annealed Treatment Effect in Poly(3-hexylthiophene):Methanofullerene Solar Cells

    Institute of Scientific and Technical Information of China (English)

    YU Huang-Zhong; PENG Jun-Biao

    2008-01-01

    @@ Polymer photovoltaic devices based on poly(3-hexylthiophene) (P3HT) : [6,6]-phenyl-C61-butyricacid methyl ester (PCBM) 1:1 weight-ratio blend are reported. The effects of various annealing treatments on the device performance axe investigated. Thermal annealing shows significant improvement of the device performances. For devices at 130℃ annealing, maximum power conversion efficiency (PCE) of 3.3% and fill factor up to 60.3% is achieved under air mass 1.5, 100 m W/cm2 illumination. We discuss the effect of thermal annealing by the results of ultraviolet-visible absorption spectroscopy (UV-vis), dark current-voltage curve, atomic force microscopy (AFM).

  11. Influence of degree of deformation in rolling on anneal hardening effect of a cast copper alloy

    Indian Academy of Sciences (India)

    Svetlana Nestorovic; Desimir Markovic; Ljubica Ivanic

    2003-10-01

    This paper reports results of investigations carried out on a cast copper alloy containing 8 at.% Al. The alloy, and pure copper for the sake of comparison, were subjected to cold rolling with a final reduction of 30, 50 or 70%. The cold rolled copper and copper alloy samples were isochronally and isothermally annealed up to the recrystallization temperature. The hardness, strength and electrical conductivity were measured and X-ray and DSC analyses performed. Anneal hardening effect was observed in the alloy in the temperature range 180–300°C, followed by an increase in the electrical conductivity. The amount of strengthening increases with increasing degree of prior cold work. The X-ray analysis shows a change in the lattice parameter during annealing when anneal hardening effect was observed. The DSC analysis shows the exothermic character of this effect.

  12. Extended defects in hydrogen-implanted (111) silicon wafer treated by high temperature annealing process

    Institute of Scientific and Technical Information of China (English)

    XIAO Qinghua; TU Hailing

    2004-01-01

    High resolution transmission electron microscopy (HRTEM) has been used to investigate the extended defects induced by the interaction between hydrogen and silicon during the high temperature annealing process in the hydrogen-implanted (111) silicon wafer. It has been found that the high temperature annealing process, like the low temperature annealing process, leads to the formation of cracks. However, beneath the cracks induced by high temperature annealing, there appear many additional dislocations. Some amorphous bands have also been observed. In addition, a string of cavities, which are truncated octahedral in shape and surrounded by {111} and {100 } lattice planes, have been revealed. These cavities, some of which have amorphous inner walls, are arrayed parallel to the top surface. Between cavities, there normally appears a dislocation band.

  13. Effects of Solution Annealing Temperature on the Galvanic Corrosion Behavior of the Super Duplex Stainless Steels

    Science.gov (United States)

    Lee, Jun-Seob; Jeon, Soon-Hyeok; Park, Yong-Soo

    2013-02-01

    This study investigated the active dissolution of super duplex stainless steel (SDSS) at various solution annealing temperatures. The active dissolutions of the α-phase and γ-phase were compared, and the effects of the surface area ratio on the active dissolutions of both phases were investigated. There were two peaks in the active-passive transition region in the potentiodynamic test in the modified green-death solution. The two peaks changed as the solution annealing temperature was increased from 1050 to 1150 °C. The solution annealing temperature difference affected the critical anodic current densities. This provides useful information for determining the appropriate solution annealing temperature in the modified green-death solution for SDSS.

  14. Tailoring the crystal structure of individual silicon nanowires by polarized laser annealing.

    Science.gov (United States)

    Chang, Chia-Chi; Chen, Haitian; Chen, Chun-Chung; Hung, Wei-Hsuan; Hsu, I-Kai; Theiss, Jesse; Zhou, Chongwu; Cronin, Stephen B

    2011-07-29

    We study the effect of polarized laser annealing on the crystalline structure of individual crystalline-amorphous core-shell silicon nanowires (NWs) using Raman spectroscopy. The crystalline fraction of the annealed spot increases dramatically from 0 to 0.93 with increasing incident laser power. We observe Raman lineshape narrowing and frequency hardening upon laser annealing due to the growth of the crystalline core, which is confirmed by high resolution transmission electron microscopy (HRTEM). The anti-Stokes:Stokes Raman intensity ratio is used to determine the local heating temperature caused by the intense focused laser, which exhibits a strong polarization dependence in Si NWs. The most efficient annealing occurs when the laser polarization is aligned along the axis of the NWs, which results in an amorphous-crystalline interface less than 0.5 µm in length. This paper demonstrates a new approach to control the crystal structure of NWs on the sub-micron length scale.

  15. Growth annealing equilibrium of tungsten nanostructures by helium plasma irradiation in non-eroding regimes

    Energy Technology Data Exchange (ETDEWEB)

    Kajita, Shin, E-mail: kajita.shin@nagoya-u.jp [EcoTopia Science Institute, Nagoya University, Nagoya 464-8603 (Japan); Ohno, Noriyasu; Yajima, Miyuki; Kato, Joji [Graduate School of Engineering, Nagoya University, Nagoya 464-8603 (Japan)

    2013-09-15

    Helium plasma irradiation to tungsten leads to the formation of nanostructures on the surface. On the other hand, when the surface temperature is raised without helium irradiation, the nanostructure is annealed out. In this study, the boundary between the formation and annealing of tungsten nanostructures are investigated in the divertor simulator NAGDIS-II. When the helium ion flux to the surface was gradually decreased at the surface temperature of 1300–1600 K, the nanostructure growth was terminated at some point, and the nanostructures started to be annealed out. The helium ion flux threshold that determines the boundary between the growth and the annealing was varied by the irradiation history, and the flux threshold was in the range of 10{sup 21}–10{sup 22} m{sup −2}.

  16. Improving the Stability and Performance of Perovskite Light-Emitting Diodes by Thermal Annealing Treatment.

    Science.gov (United States)

    Yu, Jae Choul; Kim, Dae Woo; Kim, Da Bin; Jung, Eui Dae; Park, Jong Hyun; Lee, Ah-Young; Lee, Bo Ram; Di Nuzzo, Daniele; Friend, Richard H; Song, Myoung Hoon

    2016-08-01

    A perovskite LED with a perovskite film treated under optimum thermal annealing conditions exhibits a significantly enhanced long-term stability with full coverage of the green electroluminescence emission due to the highly uniform morphology of the perovskite film.

  17. Laser annealed composite titanium dioxide electrodes for dye-sensitized solar cells on glass and plastics

    Science.gov (United States)

    Pan, Heng; Ko, Seung Hwan; Misra, Nipun; Grigoropoulos, Costas P.

    2009-02-01

    We report a rapid and low temperature process for fabricating composite TiO2 electrodes for dye-sensitized solar cells on glass and plastics by in tandem spray deposition and laser annealing. A homogenized KrF excimer laser beam (248 nm) was used to layer-by-layer anneal spray deposited TiO2 nanoparticles. The produced TiO2 film is crack free and contains small particles (30 nm) mixed with different fractions of larger particles (100-200 nm) controlled by the applied laser fluence. Laser annealed double-layered structure is demonstrated for both doctor-blade deposited and spray-deposited electrodes and performance enhancement can be observed. The highest demonstrated all-laser-annealed cells utilizing ruthenium dye and liquid electrolyte showed power conversion efficiency of ˜3.8% under simulated illumination of 100 mW/cm2.

  18. EFFECT OF ANNEALING TREATMENT ON THE STRUCTURE OF CdS FILMS

    Institute of Scientific and Technical Information of China (English)

    G.B. Liu; W.L. Wang; C.G. Hu; K.J. Liao; Q. Feng; L.H. Feng

    2003-01-01

    The effect of annealing treatment on the structure of CdS films was investigated.The cadmium sulfide thin films were prepared by chemical bath deposition, and were annealed at nitrogen atmosphere at different temperatures. The films were characterized by SEM and XPS (X-ray photoelectron spectroscopy). X-ray photoelectron spectroscopy was used to examine the chemical states on the CdS films surface. It was found that thermal annealing could produce large grains of CdS thin films, remove the air contamination and reduce the oxygen content on the CdS films surface. Therefore,the CdS films changed more uniform and smoother surface after thermal annealing.

  19. Annealing effects of sapphire substrate on properties of ZnO films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Y.Z. [South China Normal University, School of Physics and Telecommunication Engineering, Guangzhou (China); Xu, J. [Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, P.O. Box 800-211, Shanghai (China)

    2007-09-15

    The annealing effects of sapphire substrates on the quality of epitaxial ZnO films grown by dc reactive magnetron sputtering were studied. The atomic steps formed on (0001) sapphire ({alpha}-Al{sub 2}O{sub 3}) substrates surface by annealing at high temperature were analyzed by atomic force microscopy. Their influence on the growth of ZnO films was examined by X-ray diffraction and photoluminescence measurements. Experimental results indicate that the film quality is strongly affected by annealing treatment of the sapphire substrate surface. The optimum annealing temperature of sapphire substrates for ZnO grown by magnetron sputtering is 1400 C for 1 h in air. (orig.)

  20. Low-Temperature Annealing Induced Amorphization in Nanocrystalline NiW Alloy Films

    Directory of Open Access Journals (Sweden)

    Z. Q. Chen

    2013-01-01

    Full Text Available Annealing induced amorphization in sputtered glass-forming thin films was generally observed in the supercooled liquid region. Based on X-ray diffraction and transmission electron microscope (TEM analysis, however, here, we demonstrate that nearly full amorphization could occur in nanocrystalline (NC sputtered NiW alloy films annealed at relatively low temperature. Whilst the supersaturation of W content caused by the formation of Ni4W phase played a crucial role in the amorphization process of NiW alloy films annealed at 473 K for 30 min, nearly full amorphization occurred upon further annealing of the film for 60 min. The redistribution of free volume from amorphous regions into crystalline regions was proposed as the possible mechanism underlying the nearly full amorphization observed in NiW alloys.