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Sample records for annealing time effect

  1. Effects of annealing time on the structure, morphology, and stress of gold–chromium bilayer film

    International Nuclear Information System (INIS)

    Zhang Hong; Wang Hu; Huang Hao-Peng; Jin Yun-Xia; Kong Fang-Yu; Cui Yun

    2016-01-01

    In this work, a 200-nm-thick gold film with a 10-nm-thick chromium layer used as an adhesive layer is fabricated on fused silica by the electron beam evaporation method. The effects of annealing time at 300 °C on the structure, morphology and stress of the film are studied. We find that chromium could diffuse to the surface of the film by formatting a solid solution with gold during annealing. Meanwhile, chromium is oxidized on the surface and diffused downward along the grain grooves in the gold film. The various operant mechanisms that change the residual stresses of gold films for different annealing times are discussed. (paper)

  2. Effect of annealing time on structural and magnetic properties of ...

    Indian Academy of Sciences (India)

    We studied the effects on the structural and magnetic properties of Fe3O4 thin films. The films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and vibrating sample magnetometry (VSM). XRD studies showed pure single phase spinel cubic structure of Fe3O4 with a preferential [111] ...

  3. Effect of Anneal temperature and Time on Change of Texture and Hardness of Al-Cu-Mg

    International Nuclear Information System (INIS)

    Masrukan; Adolf Asih, S.

    2000-01-01

    Observation of the effect of annealing temperature to its texture and hardness of the Al-Cu-Mg has been done. In this experiments aluminium alloy powder and 5 pieces cubes of this alloy with size of 8 x 8 x 8 mm 3 were used. The powder was not annealed, 2 pieces cube were annealed for 20 hours at temperatures of 200 o C and 300 o respectively, finally 3 pieces cube were annealed at temperature of 400 o C. Texture measurement was done using x-ray diffraction with wave length of 1.78892 A using inverse pole figure method. The hardness testing results at constant temperature of 400 o C and various time indicated that the hardness values are decreased with increasing annealed time. Also, at hardness testing for constant time and various annealing temperatures indicated that the hardness values decreased with increasing annealing temperature

  4. Effect of annealing time on morphological characteristics of Ba(Zr,Ti)O3 thin films

    International Nuclear Information System (INIS)

    Cavalcante, L.S.; Anicete-Santos, M.; Pontes, F.M.; Souza, I.A.; Santos, L.P.S.; Rosa, I.L.V.; Santos, M.R.M.C.; Santos-Junior, L.S.; Leite, E.R.; Longo, E.

    2007-01-01

    Ba(Zr 0.50 Ti 0.50 )O 3 thin films were prepared by the polymeric precursor method using the annealing low temperature of 300 o C for 8, 16, 24, 48, 96 and 192h in a furnace tube with oxygen atmosphere. The X-ray diffraction patterns revealed that the film annealed for 192 h presented some crystallographic planes (1bar 0bar 0) (1bar 1bar 0) and (2bar 0bar 0) in its crystalline lattice. Fourier transformed infrared presented the formation of metal-oxygen stretching at around 756cm -1 . The atomic force microscopy analysis presented the growth of granules in the Ba(Zr 0.50 Ti 0.50 )O 3 films annealed from 8 to 96h. The crystalline film annealed for 192h already presents grains in its perovskite structure. It evidenced a reduction in the thickness of the thin films with the increase of the annealing time

  5. Effects of Annealing Time on the Performance of OTFT on Glass with ZrO2 as Gate Dielectric

    Directory of Open Access Journals (Sweden)

    W. M. Tang

    2012-01-01

    Full Text Available Copper phthalocyanine-based organic thin-film transistors (OTFTs with zirconium oxide (ZrO2 as gate dielectric have been fabricated on glass substrates. The gate dielectric is annealed in N2 at different durations (5, 15, 40, and 60 min to investigate the effects of annealing time on the electrical properties of the OTFTs. Experimental results show that the longer the annealing time for the OTFT, the better the performance. Among the devices studied, OTFTs with gate dielectric annealed at 350°C in N2 for 60 min exhibit the best device performance. They have a small threshold voltage of −0.58 V, a low subthreshold slope of 0.8 V/decade, and a low off-state current of 0.73 nA. These characteristics demonstrate that the fabricated device is suitable for low-voltage and low-power operations. When compared with the TFT samples annealed for 5 min, the ones annealed for 60 min have 20% higher mobility and nearly two times smaller the subthreshold slope and off-state current. The extended annealing can effectively reduce the defects in the high-k film and produces a better insulator/organic interface. This results in lower amount of carrier scattering and larger CuPc grains for carrier transport.

  6. Annealing Time Effect on Nanostructured n-ZnO/p-Si Heterojunction Photodetector Performance

    Science.gov (United States)

    Habubi, Nadir. F.; Ismail, Raid. A.; Hamoudi, Walid K.; Abid, Hassam. R.

    2015-02-01

    In this work, n-ZnO/p-Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15-60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm-99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm-2.16 nm. Dark and under illumination current-voltage (I-V) characteristics of the n-ZnO/p-Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance-voltage (C-V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO/Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12-0.19 A/W and 0.18-0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

  7. Effects of annealing time on the recovery of Charpy V-notch properties of irradiated high-copper weld metal

    International Nuclear Information System (INIS)

    Iskander, S.K.; Sokolov, M.A.; Nanstad, R.K.

    1994-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. An important issue to be resolved is the effect on the toughness properties of reirradiating a vessel that has been annealed. This paper describes the annealing response of irradiated high-copper submerged-arc weld HSSI 73W. For this study, the weld has been annealed at 454 C (850 F) for lengths of time varying between 1 and 14 days. The Charpy V-notch 41-J (30-ft-lb) transition temperature (TT 41J ) almost fully recovered for the longest period studied, but recovered to a lesser degree for the shorter periods. No significant recovery of the TT 41J was observed for a 7-day anneal at 343 C (650 F). At 454 C for the durations studied, the values of the upper-shelf impact energy of irradiated and annealed weld metal exceeded the values in the unirradiated condition. Similar behavior was observed after aging the unirradiated weld metal at 460 and 490 C for 1 week

  8. Chemical vapour deposition at atmospheric pressure of graphene on molybdenum foil: Effect of annealing time on characteristics and corrosion stability of graphene coatings

    International Nuclear Information System (INIS)

    Naghdi, Samira; Jevremović, Ivana; Mišković-Stanković, Vesna; Rhee, Kyong Yop

    2016-01-01

    Highlights: • Atmospheric pressure chemical vapor deposition of graphene on molybdenum foils. • Quality and domain size of graphene layers increased with longer annealing times. • The number of graphene layers decreased with longer annealing times. • Graphene coatings on molybdenum foils exhibited corrosion inhibitive properties. - Abstract: In this work, the effect of pre-annealing of Mo substrate on the quality of graphene layers grown by chemical vapour deposition was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy. Moreover, different electrochemical techniques were employed to investigate the corrosion stability of the graphene coated Mo in 0.1 M NaCl. Longer annealing time resulted in less defective graphene coatings with fewer layers. Graphene coating on the annealed Mo provided better protection against corrosion during the initial exposure times, while after prolonged exposure times, both graphene coatings on annealed and non-annealed Mo exhibited nearly the same corrosion inhibitive properties.

  9. Effect of annealing time on optical and electrical properties of CdS thin films

    Science.gov (United States)

    Soliya, Vanshika; Tandel, Digisha; Patel, Chandani; Patel, Kinjal

    2018-05-01

    Cadmium sulphide (CdS) is semiconductor compound of II-VI group. Thin film of CdS widely used in the applications such as, a buffer layer in copper indium diselenide (CIS) hetrojunction based solar cells, transistors, photo detectors and light emitting diodes. Because of the ease of making like chemical bath deposition (CBD), screen printing and thermal evaporation. It is extensively used in the CIS based solar cells as a buffer layers. The buffer layers usually used for reducing the interface recombination of the photo generated carriers by means of improving the lattice mismatch between the layers. The optimum thickness and the optoelectronics properties of CdS thin films like, optical band gap, electrical resistivity, structure, and composition etc., are to be considering for its use as a buffer layer. In the present study the CdS thin film were grown by simple dip coating method. In this method we had prepared 0.1M Cadmium-thiourea precursor solution. Before the deposition process of CdS, glass substrate has been cleaned using Methanol, Acetone, Trichloroethylene and De-ionized (DI) water. After coating of precursor layer, it was heated at 200 °C for themolysis. Then after CdS films were annealed at 200 °C for different time and studied its influence on the optical transmission, band gap, XRD, raman and the electrical resistivity. As increasing the annealing time we had observed the average transmission of the films was reduce after the absorption edge. In addition to the blue shift of absorption edge was observed. The observed optimum band gap was around 2.50 eV. XRD and raman analysis confirms the cubuc phase of CdS. Hot probe method confirms the n-type conductivity of the CdS film. Hall probe data shows the resistivity of the films was in the order of 103 Ωcm. Observed data signifies its future use in the many optoelectronics devices.

  10. The effect of annealing on the time-dependent behavior of isotactic polypropylene at finite strains

    DEFF Research Database (Denmark)

    Drozdov, Aleksey D.; Christiansen, Jesper de Claville

    2002-01-01

    Four series of tensile relaxation tests are performed on isotactic polypropylene at elongations up to the necking point. In the first series of experiments, injection-molded samples are used without thermal pre-treatment. In the other series, the specimens are annealed for 24 h prior to testing a...... at annealing. In the post-critical region (large strains), an increase in the fraction of active amorphous domains is attributed to disintegration of primary (thick) lamellae....

  11. Time effects in the thermal annealing of Fe/V multilayers

    CERN Document Server

    Borges, J F M

    2003-01-01

    We report a study on the structural and magnetic properties of iron-vanadium thin films grown in multilayer form and mixed by thermal treatment. The multilayer samples were annealed at 610 deg. C for times ranging from 10 to 540 min. The samples were structurally characterized by means of x-ray diffraction (XRD) and by x-ray absorption spectroscopy (XAS). The magnetic characterization was carried out with a conventional alternating gradient magnetometer (AGM) and by conversion electron Moessbauer spectroscopy (CEMS). The XRD result for the as-deposited multilayer shows a high degree of crystallinity while the CEMS result suggests an abrupt interface, since no significant contribution from vanadium in iron is observed. After the thermal treatment, the results from XRD show a phase transformation of the disordered body-centred-cubic structure (alpha-phase) into a tetragonal structure (sigma-phase) and a subsequent return to the alpha-phase. This alpha-sigma-alpha oscillation is not reported in the literature av...

  12. Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of ultrathin block copolymer films.

    Science.gov (United States)

    Huang, Changchun; Wen, Gangyao; Li, Jingdan; Wu, Tao; Wang, Lina; Xue, Feifei; Li, Hongfei; Shi, Tongfei

    2016-09-15

    Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of spin-coated polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) films (dewetting of the films with different thicknesses occur via the spinodal dewetting and the nucleation and growth mechanisms, respectively. The PS-b-PMMA films rupture into droplets which first coalesce into large ones to reduce the surface free energy. Then the large droplets rupture into small ones to increase the contact area between PMMA blocks and acetone molecules resulting from ultimate migration of PMMA blocks to droplet surface, which is a novel dewetting process observed in spin-coated films for the first time. Copyright © 2016 Elsevier Inc. All rights reserved.

  13. Finite-time thermodynamics and simulated annealing

    International Nuclear Information System (INIS)

    Andresen, B.

    1989-01-01

    When the general, global optimization technique simulated annealing was introduced by Kirkpatrick et al. (1983), this mathematical algorithm was based on an analogy to the statistical mechanical behavior of real physical systems like spin glasses, hence the name. In the intervening span of years the method has proven exceptionally useful for a great variety of extremely complicated problems, notably NP-problems like the travelling salesman, DNA sequencing, and graph partitioning. Only a few highly optimized heuristic algorithms (e.g. Lin, Kernighan 1973) have outperformed simulated annealing on their respective problems (Johnson et al. 1989). Simulated annealing in its current form relies only on the static quantity 'energy' to describe the system, whereas questions of rate, as in the temperature path (annealing schedule, see below), are left to intuition. We extent the connection to physical systems and take over further components from thermodynamics like ensemble, heat capacity, and relaxation time. Finally we refer to finite-time thermodynamics (Andresen, Salomon, Berry 1984) for a dynamical estimate of the optimal temperature path. (orig.)

  14. Effect of Annealing Time of YAG:Ce3+ Phosphor on White Light Chromaticity Values

    Science.gov (United States)

    Abd, Husnen R.; Hassan, Z.; Ahmed, Naser M.; Almessiere, Munirah Abdullah; Omar, A. F.; Alsultany, Forat H.; Sabah, Fayroz A.; Osman, Ummu Shuhada

    2018-02-01

    Yttrium and aluminium nitrate phosphors doped with cerium nitrate and mixed with urea (fuel) are prepared by using microwave-induced combustion synthesis according to the formula Y(3-0.06)Al5O12:0.06Ce3+ (YAG:Ce3+) to produce white light emitting diodes by conversion from blue indium gallium nitride-light emitting diode chips. The sintering time with fixed temperature (1050°C) for phosphor powder was optimized and found to be 5 h. The crystallinity, structure, chemical composition, luminescent properties with varying currents densities and chromaticity were characterized by x-ray diffraction, field emission-scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy, photoluminescence emission, electroluminescence and standard CIE 1931 chromaticity diagram, respectively. The energy levels of Ce3+ in YAG were discussed based on its absorption and excitation spectra. The results show that the obtained YAG:Ce3+ phosphor sintered for 5 h has good crystallinity with pure phase, low agglomerate with spherical shaped particles and strong yellow emission, offering cool-white LED with tuneable correlated color temperature and a good color rendering index compared to those prepared by sintering for 2 h and as-prepared phosphor powders.

  15. Effect of annealing and UV-radiation time over micropore architecture of self-assembled block copolymer thin film

    Directory of Open Access Journals (Sweden)

    G. del C. Pizarro

    2015-06-01

    Full Text Available Block copolymers have been recognized as versatile materials to prepare nanoporous polymer films or membranes, but their potential has not been completely explored. This study focuses on the formation and characterization of nanoporous polymer films based on poly(styrene-block-(methylmethacrylate/methacrylic acid; (PS-b-MMA/MAA were obtained through atom transfer radical polymerization (ATRP, by using two different protocols: annealing and annealingirradiation; for improving the formation of microporous surface. The composition, crystallinity and structural order of the films were studied by Raman spectroscopy. The film polymer thickness was obtained through very high resolution ellipsometry (VHRE. Finally, atomic force microcopy (AFM and scanning electron microscopy (SEM techniques were used to detect changes in the porous-structure. These results show that the morphological properties of the block copolymer were affected via the modification of two variables, UV-radiation time and annealing. SEM and AFM micrographs showed that the morphology exhibit a porous ordered structure. Contact angle measurement suggests additional interactions between hydrophilic functional groups that influence the film wettability.

  16. Annealing effect on restoration of irradiation steel properties

    International Nuclear Information System (INIS)

    Vishkarev, O.M.; Kolesova, T.N.; Myasnikova, K.P.; Pecherin, A.M.; Shamardin, V.K.

    1986-01-01

    The effect of temperature and annealing time on the restoration of properties of the 15Kh2NMFAA and 15Kh2MFA steels after irradiation at 285 deg with the fluence of 6x10 23 neutr/m 2 (E>0.5 MeV) is studied. Microhardness (H μ ) restoration in the irradiated 15Kh2NMFAA steel is shown to start from 350 deg C annealing temperature. The complete microhardness restoration is observed at the annealing temperature of 500 deg C for 10 hours

  17. Effect of Anodizing Time and Annealing Temperature on Photoelectrochemical Properties of Anodized TiO2 Nanotube for Corrosion Prevention Application

    Directory of Open Access Journals (Sweden)

    Misriyani Misriyani

    2017-07-01

    Full Text Available A study on the influence of anodizing time, annealing temperature and photoelectrochemical properties of TiO2 nanotube (TiO2 NT has been investigated. The crystallinity was investigated using X-Ray Diffraction and the anti-corrosion performance of stainless steel 304 (SS 304 coupled with TiO2 NT was evaluated using electrochemical techniques under ultraviolet exposure. The optimum anodizing condition occurs at a voltage of 20 V for 3 h. After anodizing, the TiO2 NT amorf was calcined at 500 °C to obtain anatase crystalline phase. For the photoelectrochemical property, the effects of pH and NaCl concentration on corrosion prevention have been examined. The result showed that the corrosion rate of stainless steel 304 coupled with TiO2 NT can be reduced up to 1.7 times compared to the uncoupled stainless steel 304 (3.05×10-6 to 1.78×10-6 mpy under ultraviolet exposure by shifted the photopotential to the more negative value (-0.302 V to -0.354 V at a pH of 8 and 3% NaCl concentration (-0.264 V to -0.291 V. In conclusion, the TiO2 NT films, which was prepared by anodization and followed by annealing can prevent the corrosion of stainless steel 304.

  18. Positron prevacancy effects in pure annealed metals

    International Nuclear Information System (INIS)

    Smedskjaer, L.C.

    1981-06-01

    The low-temperature prevacancy effects sometimes observed with positrons in well-annealed high-purity metals are discussed. It is shown that these effects are not experimental artifacts, but are due to trapping of the positrons. It is suggested that dislocations are responsible for these trapping effects. 46 references, 5 figures

  19. Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

    Energy Technology Data Exchange (ETDEWEB)

    Woscholski, R., E-mail: ronja.woscholski@physik.uni-marburg.de; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

    2016-08-31

    Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C.

  20. Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing

    International Nuclear Information System (INIS)

    Woscholski, R.; Shakfa, M.K.; Gies, S.; Wiemer, M.; Rahimi-Iman, A.; Zimprich, M.; Reinhard, S.; Jandieri, K.; Baranovskii, S.D.; Heimbrodt, W.; Volz, K.; Stolz, W.; Koch, M.

    2016-01-01

    Time-resolved photoluminescence (TR-PL) spectroscopy has been used to study the impact of rapid thermal annealing (RTA) on the optical properties and carrier dynamics in Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates. TR-PL measurements reveal an enhancement in the PL efficiency when the RTA temperature is increased up to 925 °C. Then, the PL intensity dramatically decreases with the annealing temperature. This behavior is explained by the variation of the disorder degree in the studied structures. The analysis of the low-temperature emission-energy-dependent PL decay time enables us to characterize the disorder in the Ga(NAsP) MQWHs. The theoretically extracted energy-scales of disorder confirm the experimental observations. - Highlights: • Ga(NAsP) multiple quantum well heterostructures (MQWHs) grown on silicon substrates • Impact of rapid thermal annealing on the optical properties and carrier dynamics • Time resolved photoluminescence spectroscopy was applied. • PL transients became continuously faster with increasing annealing temperature. • Enhancement in the PL efficiency with increasing annealing temperature up to 925 °C

  1. Effects of annealing on evaporated SnS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sakrani, Samsudi; Ismail, Bakar [Universiti Teknologi Malaysia, Skudai, Johor Bahru (Malaysia). Dept. of Physics

    1994-12-31

    The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound.

  2. Effects of annealing on evaporated SnS thin films

    International Nuclear Information System (INIS)

    Samsudi Sakrani; Bakar Ismail

    1994-01-01

    The effects of annealing of evaporated tin sulphide thin films (SnS) are described. The films were initially deposited onto glass substrate, followed by annealing in an encapsulated carbon block under the running argon gas at 310 degree Celsius. Short time annealing of the films results in a slight change of the compositions to a mix SnS/SnS sub 2 compound, and the tendency of increasing SnS sub 2 formation was observed on the films annealed for longer periods up to 20 hours. X-ray results showed the transformation of SnS peaks (040) and (080) to predominantly SnS sub 2 peaks - (001), (100), (101), and (110). The associated absorption coefficients measured on the films were found to be greater than 10 sup 5 cm sup -1, with indication of higher photon energy leading to the formation of SnS sub 2 compound

  3. Effects of deposition temperature and in-situ annealing time on structure and magnetic properties of (001) orientation FePt films

    International Nuclear Information System (INIS)

    Yu, Yongsheng; George, T.A.; Li, Haibo; Sun, Daqian; Ren, Zhenan; Sellmyer, D.J.

    2013-01-01

    FePt films were prepared on (100) oriented single crystal MgO substrates at high temperature ranging from 620 until 800 °C and in-situ annealed for different times ranging from 0 to 60 min to obtain ordered FePt films. The structural analysis indicates that FePt films grow epitaxially on MgO (100) substrates. Both increasing deposition temperature and in-situ annealing time enhance the (001) texture and ordering of FePt films. The magnetic analysis shows that these L1 0 FePt films have perpendicular anisotropy and the easy magnetization c-axis is perpendicular to the film plane. Magnetization reversal is controlled by a rotational mechanism. The hard magnetic properties of the films are improved with increasing deposition temperature or in-situ annealing time. - Highlights: ► The paper reports the texture and magnetic evolution of FePt films deposited on MgO substrates. ► Increasing deposition temperature or annealing time enhanced the texture and ordering. ► The magnetic analysis shows L1 0 FePt films have perpendicular anisotropy.

  4. Origin of reverse annealing effect in hydrogen-implanted silicon

    Energy Technology Data Exchange (ETDEWEB)

    Di, Zengfeng [Los Alamos National Laboratory; Nastasi, Michael A [Los Alamos National Laboratory; Wang, Yongqiang [Los Alamos National Laboratory

    2009-01-01

    In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. On the basis of quantitative high resolution transmission electron microscopy combined with channeling Rutherford backscattering analysis, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induce platelets. Platelets are responsible for an increase in the height and width the channeling damage peak following increased isochronal anneals.

  5. The influence of annealing temperature and time on the efficiency of pentacene: PTCDI organic solar cells

    Directory of Open Access Journals (Sweden)

    Mehmet Biber

    Full Text Available In this study, fabrication of a polycyclic aromatic hydrocarbon/Perylene Tetracarboxylic Di-Imide (PTCDI, donor/acceptor solar cells are presented using physical vapour deposition technique in a 1000 class glove box. An ITO/PEDOT:PSS/Pentacene/PTCDI/Al (ITO = Indium Tin Oxide and PEDOT:PSS = poly(3,4-ethylenedioxythiophene polystyrene sulfonate solar cell has been obtained and the power conversion efficiency, PCE (η of about 0.33% has been obtained under simulated solar illumination of 300 W/m2. Furthermore, the effects of annealing temperatures (at 100 and 150 °C and of annealing (at 100 °C times for 5 and 10 min. on the power conversion efficiency, η of the solar cells have also been investigated. In general, it has been seen that the thermal annealing deteriorated the characteristics parameters of Pentacene/PTCDI solar cell such that both fill factor, FF and η decreased after annealing and with increase of annealing time. Atomic force microscopy (AFM images showed that the phase segregation and grain size increased and the surface roughness of Pentacene film decreased and these effects reduced the η value. The η values of the solar cell have been determined as 0.33%, 0.12% and 0.06% for pre-annealing, annealing at 100 and 150 °C, respectively. Keywords: Organic solar cells, PTCDI, Pentacene, Annealing

  6. Reduction of Annealing Times for Energy Conservation in Aluminum

    Energy Technology Data Exchange (ETDEWEB)

    Anthony D. Rollett; Hasso Weiland; Mohammed Alvi; Abhijit Brahme

    2005-08-31

    Carnegie Mellon University was teamed with the Alcoa Technical Center with support from the US Dept. of Energy (Office of Industrial Technology) and the Pennsylvania Technology Investment Authority (PTIA) to make processing of aluminum less costly and more energy efficient. Researchers in the Department of Materials Science and Engineering have investigated how annealing processes in the early stages of aluminum processing affect the structure and properties of the material. Annealing at high temperatures consumes significant amounts of time and energy. By making detailed measurements of the crystallography and morphology of internal structural changes they have generated new information that will provide a scientific basis for shortening processing times and consuming less energy during annealing.

  7. Effect of Annealing Time for Quenching CuAl7Fe5Ni5W2Si2 Bronze on the Microstructure and Mechanical Properties

    Directory of Open Access Journals (Sweden)

    B. P. Pisarek

    2012-04-01

    Full Text Available This paper presents the influence of annealing time 30, 60 and 120 min at 1000°C for quenching CuAl7Fe5Ni5W2Si2 bronze in 10% water solution of NaCl, on the microstructure and mechanical properties. The presented results concern the species newly developed aluminum-iron-nickel bronze, with additions W and Si.In order to determine changes in the microstructure of the hardened bronze metallographic studies were performed on cylindrical samples of diameter 10 mm, on the metallographic microscope with digital image analysis, X-ray phase analysis, EDX point with the digital recording on the computer. Specified percentage of the microstructure of martensite and bainite, participation of proeutectoid α phase in the microstructure, grain size of former β phase, the amount of dissolved κ phase.It was found that in the microstructure of bronze in the cast state, there are a number of intermetallic phases of κ type. At interphase boundaries of primary intermetallic faceted precipitates, especially rich in tungsten (IM_W, nucleate and grow dendritic primary intermetallic κI phases, with chemical composition similar to the type of Fe3Si iron silicide.Dissolved, during the heating, in the β phase are all the intermediate phase included in the microstructure, with the exception of primary intermetallic phases of tungsten and κI. Prolongation of the isothermal annealing causes coagulation and coalescence of primary phases. In microstructure of the bronze after quenching obtained the α phase precipitation on the grain boundary of secondary β phase, coarse bainite and martensite, for all annealing times. With the change of annealing time are changed the relative proportions of individual phases or their systems, in the microstructure. In the microstructure of bronze, hold at temperature of 1000°C for 60 min, after quenching martensitic microstructure was obtained with the primary phases, and the least amount of bainite.

  8. Germanium nanoislands grown by radio frequency magnetron sputtering: Annealing time dependent surface morphology and photoluminescence

    International Nuclear Information System (INIS)

    Samavati, Alireza; Othaman, Z.; Ghoshal, S. K.; Amjad, R. J.

    2013-01-01

    Structural and optical properties of ∼ 20 nm Ge nanoislands grown on Si(100) by radio frequency (rf) magnetron sputtering under varying annealing conditions are reported. Rapid thermal annealing at a temperature of 600°C for 30 s, 90 s, and 120 s are performed to examine the influence of annealing time on the surface morphology and photoluminescence properties. X-ray diffraction spectra reveal prominent Ge and GeO 2 peaks highly sensitive to the annealing time. Atomic force microscope micrographs of the as-grown sample show pyramidal nanoislands with relatively high-density 10 11 cm −2) ). The nanoislands become dome-shaped upon annealing through a coarsening process mediated by Oswald ripening. The room temperature photoluminescence peaks for both as-grown 3.29 eV) and annealed 3.19 eV) samples consist of high intensity and broad emission, attributed to the effect of quantum confinement. The red shift (∼0.10 eV) of the emission peak is attributed to the change in the size of the Ge nanoislands caused by annealing. Our easy fabrication method may contribute to the development of Ge nanostructure-based optoelectronics. (interdisciplinary physics and related areas of science and technology)

  9. Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD

    Science.gov (United States)

    Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Xu, Bingshe

    2018-05-01

    GaN polycrystalline films were successfully grown on amorphous SiO2 by metal-organic chemical vapour deposition to fabricate transferable devices using inorganic films. Field-emission scanning electron microscopy images show that by prolonging the annealing time, re-evaporation is enhanced, which reduced the uniformity of the nucleation layer and GaN films. X-ray diffraction patterns indicate that the decomposition rate of the nucleation layer increases when the annealing flow rate of NH3 is 500 sccm, which makes the unstable plane and amorphous domains decompose rapidly, thereby improving the crystallinity of the GaN films. Photoluminescence spectra also indicate the presence of fewer defects when the annealing flow rate of NH3 is 500 sccm. The excellent crystal structure of the GaN films grown under optimized conditions was revealed by transmission electron microscopy analysis. More importantly, the crystal structure and orientation of GaN grown on SiO2 are the same as that of GaN grown on conventional sapphire substrate when a buffer layer is used. This work can aid in the development of transferable devices using GaN films.

  10. Effect of milling time and annealing temperature on nanoparticles evolution for 13.5% Cr ODS ferritic steel powders by joint application of XAFS and TEM

    Science.gov (United States)

    He, P.; Hoffmann, J.; Möslang, A.

    2018-04-01

    The characteristics of strengthening nanoparticles have a major influence on the mechanical property and irradiation resistance of oxide dispersion strengthened (ODS) steels. To determine how to control nanoparticles evolution, 0.3% Ti with 0.3% Y2O3 were added in 13.5%Cr pre-alloyed steel powders via different milling and consolidation conditions, then characterized by transmission electron microscopy (TEM) and X-ray absorption fine structure (XAFS) at synchrotron irradiation facility. The dissolution of Y2O3 is greatly dependent on the milling time at fixed milling speeds. After 24 h of milling, only minor amounts of the initially added Y2O3 dissolve into the steel matrix whereas TEM results reveal nearly complete dissolution of Y2O3 in 80-h-milled powder. The annealed powder FT-A800 (at 800 °C for 1 h) exhibits a structure near to the initially added Y2O3. The slightly deviation may be accounted for considerable lattice distortion related to the presence of atomic vacancies or formation of Y-Ti-O nucleus. The annealed powders FT-A1000 and FT-A1100 contain complex mixtures of Y-O/Y-Ti-O oxides, which cannot be fitted by any single thermally stable compounds. The coordination numbers of these first two shells in the annealed powders significantly raise as a function of the annealing temperature, indicating the formation of more ordered Y-O or Y-Ti-O particles. The extended X-ray absorption fine structure (EXAFS) spectrum could not necessarily distinguish the dominant oxide species.

  11. Scalable effective-temperature reduction for quantum annealers via nested quantum annealing correction

    Science.gov (United States)

    Vinci, Walter; Lidar, Daniel A.

    2018-02-01

    Nested quantum annealing correction (NQAC) is an error-correcting scheme for quantum annealing that allows for the encoding of a logical qubit into an arbitrarily large number of physical qubits. The encoding replaces each logical qubit by a complete graph of degree C . The nesting level C represents the distance of the error-correcting code and controls the amount of protection against thermal and control errors. Theoretical mean-field analyses and empirical data obtained with a D-Wave Two quantum annealer (supporting up to 512 qubits) showed that NQAC has the potential to achieve a scalable effective-temperature reduction, Teff˜C-η , with 0 temperature of a quantum annealer. Such effective-temperature reduction is relevant for machine-learning applications. Since we demonstrate that NQAC achieves error correction via a reduction of the effective-temperature of the quantum annealing device, our results address the problem of the "temperature scaling law for quantum annealers," which requires the temperature of quantum annealers to be reduced as problems of larger sizes are attempted to be solved.

  12. Effect of tensile stress on the annealed structure of a metallic glass

    International Nuclear Information System (INIS)

    Vianco, P.T.; Li, J.C.M.

    1987-01-01

    The low-temperature (120 0 --245 0 C) structural relaxation of Metglas/sup R/ 2826B (Ni 49 Fe 29 P 14 B 6 Si 2 ) amorphous alloy was investigated for samples subjected to a tensile stress in the range of 20--400 MPa during annealing. The stress-annealed samples demonstrated a much smaller increase of microhardness than was observed in similarly annealed ribbons without a stress. Further heat treatment of the stress-annealed specimens, this time without the stress, was capable of increasing the microhardnesses of only some ribbons to values equal to those of samples similarly heat treated initially without a stress. An additional exothermic peak in the differential scanning calorimetry (DSC) thermograms of the stress-annealed specimens indicated the presence of a more disordered structure at room temperature, which was found to correlate with the lower microhardness values. Otherwise, those artifacts of the DSC thermograms that were characteristic of samples annealed without a stress were still present in the stress-annealed ribbons. No effect on the crystallization temperature was noted but the glass transition temperature was increased in the stress-annealed case with respect to values attained when the stress was absent during heat treatment. A reduction in the degree of embrittlement of those samples annealed with a tensile stress was a further indication of more disorder in the stress-annealed ribbons

  13. Annealing effects on cathodoluminescence of zircon

    Science.gov (United States)

    Tsuchiya, Y.; Nishido, H.; Noumi, Y.

    2011-12-01

    U-Pb zircon dating (e. g., SHRIMP) is an important tool to interpret a history of the minerals at a micrometer-scale, where cathodoluminescence (CL) imaging allows us to recognize internal zones and domains with different chemical compositions and structural disorder at high spatial resolution. The CL of zircon is attributed by various types of emission centers, which are extrinsic ones such as REE impurities and intrinsic ones such as structural defects. Metamictization resulted from radiation damage to the lattice by alpha particles from the decay of U and Th mostly causes an effect on the CL features of zircon as a defect center. However, slightly radiation-damaged zircon, which is almost nondetectable by XRD, has not been characterized using CL method. In this study, annealing effects on CL of zircon has been investigated to clarify a recovery process of the damaged lattice at low radiation dose. A single crystal of zircon from Malawi was selected for CL measurements. It contains HfO2: 2.30 w.t %, U: 241 ppm and Th: 177 ppm. Two plate samples perpendicular to c and a axes were prepared for annealing experiments during 12 hours from room temperature to 1400 degree C. Color CL images were captured using a cold-cathode microscope (Luminoscope: Nuclide ELM-3R). CL spectral measurements were conducted using an SEM (JEOL: JSM-5410) combined with a grating monochromator (Oxford: Mono CL2) to measure CL spectra ranging from 300 to 800 nm in 1 nm steps with a temperature controlled stage. The dispersed CL was collected by a photoncounting method using a photomultiplier tube (Hamamatsu: R2228) and converted to digital data. All CL spectra were corrected for the total instrumental response. Spectral analysis reveals an anisotropy of the CL emission bands related to intrinsic defect center in blue region, radiation-induced defect center from 500 to 700 nm, and trivalent Dy impurity center at 480 and 580 nm, but their relative intensities are almost constant. CL on the

  14. Effects of Thermal Annealing Conditions on Cupric Oxide Thin Film

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Hyo Seon; Oh, Hee-bong; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2015-07-15

    In this study, cupric oxide (CuO) thin films were grown on fluorine doped tin oxide(FTO) substrate by using spin coating method. We investigated the effects of thermal annealing temperature and thermal annealing duration on the morphological, structural, optical and photoelectrochemical properties of the CuO film. From the results, we could find that the morphologies, grain sizes, crystallinity and photoelectrochemical properties were dependent on the annealing conditions. As a result, the maximum photocurrent density of -1.47 mA/cm{sup 2} (vs. SCE) was obtained from the sample with the thermal annealing conditions of 500 ℃ and 40 min.

  15. Facile Synthesis of Calcium Borate Nanoparticles and the Annealing Effect on Their Structure and Size

    Directory of Open Access Journals (Sweden)

    Manizheh Navasery

    2012-11-01

    Full Text Available Calcium borate nanoparticles have been synthesized by a thermal treatment method via facile co-precipitation. Differences of annealing temperature and annealing time and their effects on crystal structure, particle size, size distribution and thermal stability of nanoparticles were investigated. The formation of calcium borate compound was characterized by X-ray diffraction (XRD and Fourier Transform Infrared spectroscopy (FTIR, Transmission electron microscopy (TEM, and Thermogravimetry (TGA. The XRD patterns revealed that the co-precipitated samples annealed at 700 °C for 3 h annealing time formed an amorphous structure and the transformation into a crystalline structure only occurred after 5 h annealing time. It was found that the samples annealed at 900 °C are mostly metaborate (CaB2O4 nanoparticles and tetraborate (CaB4O7 nanoparticles only observed at 970 °C, which was confirmed by FTIR. The TEM images indicated that with increasing the annealing time and temperature, the average particle size increases. TGA analysis confirmed the thermal stability of the annealed samples at higher temperatures.

  16. Post deposition annealing effect on the properties of Al2O3/InP interface

    Science.gov (United States)

    Kim, Hogyoung; Kim, Dong Ha; Choi, Byung Joon

    2018-02-01

    Post deposition in-situ annealing effect on the interfacial and electrical properties of Au/Al2O3/n-InP junctions were investigated. With increasing the annealing time, both the barrier height and ideality factor changed slightly but the series resistance decreased significantly. Photoluminescence (PL) measurements showed that the intensities of both the near band edge (NBE) emission from InP and defect-related bands (DBs) from Al2O3 decreased with 30 min annealing. With increasing the annealing time, the diffusion of oxygen (indium) atoms into Al2O3/InP interface (into Al2O3 layer) occurred more significantly, giving rise to the increase of the interface state density. Therefore, the out-diffusion of oxygen atoms from Al2O3 during the annealing process should be controlled carefully to optimize the Al2O3/InP based devices.

  17. Effect Of Low-Temperature Annealing On The Properties Of Ni-P Amorphous Alloys Deposited Via Electroless Plating

    Directory of Open Access Journals (Sweden)

    Zhao Guanlin

    2015-06-01

    Full Text Available Amorphous Ni-P alloys were prepared via electroless plating and annealing at 200°C at different times to obtain different microstructures. The effects of low-temperature annealing on the properties of amorphous Ni-P alloys were studied. The local atomic structure of the annealed amorphous Ni-P alloys was analyzed by calculating the atomic pair distribution function from their X-ray diffraction patterns. The results indicate that the properties of the annealed amorphous Ni-P alloys are closely related to the order atomic cluster size. However, these annealed Ni-P alloys maintained their amorphous structure at different annealing times. The variation in microhardness is in agreement with the change in cluster size. By contrast, the corrosion resistance of the annealed alloys in 3.5 wt% NaCl solution increases with the decrease in order cluster size.

  18. Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Kuo-Ming; Huang, Chao-Hsien; Lin, Shiao-Chi; Wu, Jong-Ching [Department of Physics and Taiwan SPIN Research Center, National Changhua University of Education, Changhua 50007 (China); Kao, Ming-Jer; Tsai, Ming-Jinn [Industrial Technology Research Institute, Hsinchu 31040 (China); Horng, Lance

    2007-12-15

    In this study, the transient annealing effect on the switching behavior of microstructured Co{sub 60}Fe{sub 20}B{sub 20}-based magnetic tunnel junctions has been studied through magnetoresistance measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta(20)/PtMn(15)/CoFeB(3)/Al(0.7)-oxide/CoFeB(2)/Ru(8)/Ta(40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200{proportional_to}250 C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 C annealing and results in less damage at temperature of 350 C and 400 C. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Wu, Kuo-Ming; Huang, Chao-Hsien; Lin, Shiao-Chi; Wu, Jong-Ching; Kao, Ming-Jer; Tsai, Ming-Jinn; Horng, Lance

    2007-01-01

    In this study, the transient annealing effect on the switching behavior of microstructured Co 60 Fe 20 B 20 -based magnetic tunnel junctions has been studied through magnetoresistance measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta(20)/PtMn(15)/CoFeB(3)/Al(0.7)-oxide/CoFeB(2)/Ru(8)/Ta(40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200∝250 C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 C annealing and results in less damage at temperature of 350 C and 400 C. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Annealing effects on the migration of ion-implanted cadmium in glassy carbon

    Energy Technology Data Exchange (ETDEWEB)

    Hlatshwayo, T.T., E-mail: thulani.hlatshwayo@up.ac.za [Physics Department, University of Pretoria, Pretoria (South Africa); Sebitla, L.D. [Physics Department, University of Pretoria, Pretoria (South Africa); Physics Department, University of Botswana, Gaborone (Botswana); Njoroge, E.G.; Mlambo, M.; Malherbe, J.B. [Physics Department, University of Pretoria, Pretoria (South Africa)

    2017-03-15

    The migration behaviour of cadmium (Cd) implanted into glassy carbon and the effects of annealing on radiation damage introduced by ion implantation were investigated. The glassy carbon substrates were implanted with Cd at a dose of 2 × 10{sup 16} ions/cm{sup 2} and energy of 360 keV. The implantation was performed at room temperature (RT), 430 °C and 600 °C. The RT implanted samples were isochronally annealed in vacuum at 350, 500 and 600 °C for 1 h and isothermally annealed at 350 °C up to 4 h. The as-implanted and annealed samples were characterized by Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Raman results revealed that implantation at room temperature amorphized the glassy carbon structure while high temperature implantations resulted in slightly less radiation damage. Isochronal annealing of the RT implanted samples resulted in some recrystallization as a function of increasing temperature. The original glassy carbon structure was not achieved at the highest annealing temperature of 600 °C. Diffusion of Cd in glassy carbon was already taking place during implantation at 430 °C. This diffusion of Cd was accompanied by significant loss from the surface during implantation at 600 °C. Isochronal annealing of the room temperature implanted samples at 350 °C for 1 h caused Cd to diffuse towards the bulk while isothermal annealing at 500 and 600 °C resulted in the migration of implanted Cd toward the surface accompanied by a loss of Cd from the surface. Isothermal annealing at 350 °C for 1 h caused Cd to diffuse towards the bulk while for annealing time >1 h Cd diffused towards the surface. These results were interpreted in terms of trapping and de-trapping of implanted Cd by radiation damage.

  1. Effects of annealing on the physical properties of therapeutic proteins during freeze drying process.

    Science.gov (United States)

    Lim, Jun Yeul; Lim, Dae Gon; Kim, Ki Hyun; Park, Sang-Koo; Jeong, Seong Hoon

    2018-02-01

    Effects of annealing steps during the freeze drying process on etanercept, model protein, were evaluated using various analytical methods. The annealing was introduced in three different ways depending on time and temperature. Residual water contents of dried cakes varied from 2.91% to 6.39% and decreased when the annealing step was adopted, suggesting that they are directly affected by the freeze drying methods Moreover, the samples were more homogenous when annealing was adopted. Transition temperatures of the excipients (sucrose, mannitol, and glycine) were dependent on the freeze drying steps. Size exclusion chromatography showed that monomer contents were high when annealing was adopted and also they decreased less after thermal storage at 60°C. Dynamic light scattering results exhibited that annealing can be helpful in inhibiting aggregation and that thermal storage of freeze-dried samples preferably induced fragmentation over aggregation. Shift of circular dichroism spectrum and of the contents of etanercept secondary structure was observed with different freeze drying steps and thermal storage conditions. All analytical results suggest that the physicochemical properties of etanercept formulation can differ in response to different freeze drying steps and that annealing is beneficial for maintaining stability of protein and reducing the time of freeze drying process. Copyright © 2017 Elsevier B.V. All rights reserved.

  2. Crystallinity and mechanical effects from annealing Parylene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, Nathan, E-mail: Nathan.Jackson@tyndall.ie [Tyndall National Institute, University College Cork, Cork (Ireland); Stam, Frank; O' Brien, Joe [Tyndall National Institute, University College Cork, Cork (Ireland); Kailas, Lekshmi [University of Limerick, Limerick (Ireland); Mathewson, Alan; O' Murchu, Cian [Tyndall National Institute, University College Cork, Cork (Ireland)

    2016-03-31

    Parylene is commonly used as thin film polymer for MEMS devices and smart materials. This paper investigates the impact on bulk properties due to annealing various types of Parylene films. A thin film of Parylene N, C and a hybrid material consisting of Parylene N and C were deposited using a standard Gorham process. The thin film samples were annealed at varying temperatures from room temperature up to 300 °C. The films were analyzed to determine the mechanical and crystallinity effects due to different annealing temperatures. The results demonstrate that the percentage of crystallinity and the full-width-half-maximum value on the 2θ X-ray diffraction scan increases as the annealing temperature increases until the melting temperature of the Parylene films was achieved. Highly crystalline films of 85% and 92% crystallinity were achieved for Parylene C and N respectively. Investigation of the hybrid film showed that the individual Parylene films behave independently to each other, and the crystallinity of one film had no significant impact to the other film. Mechanical testing showed that the elastic modulus and yield strength increase as a function of annealing, whereas the elongation-to-break parameter decreases. The change in elastic modulus was more significant for Parylene C than Parylene N and this is attributed to the larger change in crystallinity that was observed. Parylene C had a 112% increase in crystallinity compared to a 61% increase for Parylene N, because the original Parylene N material was more crystalline than Parylene C so the change of crystallinity was greater for Parylene C. - Highlights: • A hybrid material consisting of Parylene N and C was developed. • Parylene N has greater crystallinity than Parylene C. • Phase transition of Parylene N due to annealing results in increased crystallinity. • Annealing caused increased crystallinity and elastic modulus in Parylene films. • Annealed hybrid Parylene films crystallinity behave

  3. Annealing effects in low upper-shelf welds (series 9)

    International Nuclear Information System (INIS)

    Iskander, S.K.; Nanstad, R.K.

    1995-01-01

    The purpose of the Ninth Irradiation Series is to evaluate the correlation between fracture toughness and CVN impact energy during irradiation, annealing, and reirradiation (IAR). Results of annealing CVN specimens from the low-USE welds from the Midland beltline and nozzle course welds, as well as HSST plate 02 and HSSI weld 73W are given. Also presented is the effect of annealing on the initiation fracture toughness of annealed material from Midland beltline weld and HSST plate 02. The results from capsule 10-5 specimens of weld 73W confirm those previously obtained on the so-called undersize specimens that were irradiated in the Fifth Irradiation Series, namely that the recovery due to annealing at 343 degrees C (650 degrees F) for 1 week is insignificant. The fabrication of major components for the IAR facility for two positions on the east side of the FNR at the University of Michigan has begun. Fabrication of two reusable capsules (one for temperature verification and the other for dosimetry verification), as well as two capsules for IAR, studies is also under way. The design of a reusable capsule capable of reirradiating previously irradiated and annealed CVN and 1T C(T) specimens is also progressing. The data acquisition and control (DAC) instrumentation for the first two IAR facilities is essentially complete and awaiting completion of the IAR facilities and temperature test capsule for checkout and control algorithm development

  4. Effect of isothermal annealing on the compressive strength of a ZrAlNiCuNb metallic glass

    International Nuclear Information System (INIS)

    Song Min; He Yuehui

    2011-01-01

    Research highlights: → Only structural relaxation happens during annealing at the temperature below T g . → Nanocrystallization happens during annealing at the temperature above T g . → The compressive strength increases with annealing time up to 20 min. → The compressive strength decreases with annealing time after 20 min. - Abstract: The effects of isothermal annealing on the microstructures and compressive strength of a Zr 56 Al 10.9 Ni 4.6 Cu 27.8 Nb 0.7 bulk metallic glass (BMG) have been studied using X-ray diffraction, scanning electron microscopy and compression tests. It has been shown that only structural relaxation happens during annealing at the temperature below T g (glass transition temperature), while both structural relaxation and nanocrystallization happen during annealing at the temperature above T g . Compression tests indicated that the strength of the BMG increases with annealing time at 437 deg. C up to 20 min, after which the strength starts to decrease. The strength evolution of the BMG with the annealing time is due to combined effects of the variations of the free volume and nanocrystals.

  5. The Effect of Annealing Temperature on Nickel on Reduced Graphene Oxide Catalysts on Urea Electrooxidation

    International Nuclear Information System (INIS)

    Glass, Dean E.; Galvan, Vicente; Prakash, G.K. Surya

    2017-01-01

    Highlights: •Nickel was reduced on graphene oxide and annealed under argon from 300 to 700 °C. •Nickel was oxidized from the removal of oxygen groups on the graphene oxide. •Higher annealed catalysts displayed decreased urea electrooxidation currents. •Micro direct urea/hydrogen peroxide fuel cells were employed for the first time. •Ni/rGO catalysts displayed enhanced fuel cell performance than the bare nickel. -- Abstract: The annealing temperature effects on nickel on reduced graphene oxide (Ni/rGO) catalysts for urea electrooxidation were investigated. Nickel chloride was directly reduced in an aqueous solution of graphene oxide (GO) followed by annealing under argon at 300, 400, 500, 600, and 700 °C, respectively. X-ray Diffraction (XRD) patterns revealed an increase in the crystallite size of the nickel nanoparticles while the Raman spectra displayed an increase in the graphitic disorder of the reduced graphene oxide at higher annealing temperatures due to the removal of oxygen functional groups. The Ni/rGO catalysts annealed at higher temperatures displayed oxidized nickel surface characteristics from the Ni 2p X-ray Photoelectron Spectra (XPS) due to the oxidation of the nickel from the oxygen functional groups in the graphitic lattice. In the half-cell testing, the onset potential of urea electrooxidation decreased while the urea electrooxidation currents decreased as the annealing temperature was increased. The nickel catalyst annealed at 700 °C displayed a 31% decrease in peak power density while the catalyst annealed at 300 °C displayed a 13% increase compared with the unannealed Ni/rGO catalyst in the micro direct urea/hydrogen peroxide fuel cells tests.

  6. Annealing Effect on Corrosion Behavior of the Beta-Quenched HANA Alloy

    International Nuclear Information System (INIS)

    Kim, Hyun Gil; Kim, Il Hyun; Choi, Byung Kwan; Park, Sang Yoon; Park, Jeong Yong; Jeong, Yong Hwan

    2009-01-01

    The advanced fuel cladding materials named as HANA cladding have been developed at KAERI for application of high burn-up and that cladding showed an improved performance in both in-pile and out-of-pile conditions. However, the cladding performance could be changed by the annealing conditions during the tube manufacturing process. Especially, the corrosion resistance is considerably sensitive to their microstructure which is determined by a manufacturing process in the high Nb-containing zirconium alloys. They reported that the corrosion properties of the Nb-containing Zr alloys were considerably affected by the microstructure conditions such as the Nb concentration in the matrix and the second phase types. Therefore, the corrosion behavior of HANA cladding having the high Nb could be considerably affected by the annealing time and temperatures. The purpose of this study is focused on the annealing effect of the beta quenched HANA alloy to obtain the optimum annealing conditions

  7. Study of annealing effects in Al–Sb bilayer thin films

    Indian Academy of Sciences (India)

    There are three methods to prepare compound semiconductor systems: bilayer annealing (Singh and Vijay 2004a), rapid thermal annealing (Singh and Vijay 2004b) and ion beam mixing (Dhar et al 2003). The annealing and ion beam mixing were found to show inferior mixing effects compared to rapid thermal annealing.

  8. Sintering and annealing effects on undoped yttria transparent ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Letue, Laetitia; Petit, Johan, E-mail: johan.petit@onera.fr; Ritti, Marie-Hélène; Lalanne, Sylvie; Landais, Stéphane

    2017-06-15

    Transparent yttrium oxide (Y{sub 2}O{sub 3}) ceramics were processed by several densifications steps without any doping species. The green bodies were obtained by the aqueous way and sintered at high temperature under vacuum and then under high pressure. We studied the effects of different sintering cycles and air annealing at different steps of the process on the density and the grain growth. We also focused on the reaction between yttria ceramics and BN-coated graphite crucible which occurs during HIP. We noted that a low heating rate and two annealing steps are necessary to improve our samples’ transparency. - Highlights: • The quality of transparent ceramics is compared with the tested process parameters. • Air annealing is critical when using a carbon environment in the process. • Intra-granular pores, and so the final transparency, are directly linked to the sintering heating rates.

  9. Annealing time dependence of the physical, electrical and pH response characteristics of spin coated TiO2 thin films

    International Nuclear Information System (INIS)

    Zulkefle, M A; Rahman, R A; Yusoff, K A; Herman, S H; Abdullah, W F H; Rusop, M

    2015-01-01

    Titanium dioxide (TiO 2 ) thin film was deposited on indium tin oxide (ITO) substrate and used as sensing membrane of EGFET pH sensor. The thin film was fabricated using sol- gel spin coating method. All samples were annealed at 400 °C but the annealing time was varied. This is done to study the effects of annealing time on physical and electrical properties of titanium dioxide thin film. The sensitivity of each sample towards H + ion was measured and result shows that sample annealed for 45 minutes has the highest sensitivity (52.6 mV/pH). It is found that increasing annealing duration will increase the pH sensitivity but a limit will be reached at certain point. Longer annealing processes done beyond this point will results in lower pH sensitivity. (paper)

  10. Effect of annealing on the compositional modulation of InAlAsSb

    Energy Technology Data Exchange (ETDEWEB)

    Baladés, N., E-mail: nuria.balades@uca.es [INNANOMAT group, Departamento de Ciencia de los Materiales e I. M. y Q. I., Instituto Universitario de Investigación en Microscopía Electrónica y Materiales (IMEYMAT), CEIMAR, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain); Sales, D.L.; Herrera, M.; Delgado, F.J. [INNANOMAT group, Departamento de Ciencia de los Materiales e I. M. y Q. I., Instituto Universitario de Investigación en Microscopía Electrónica y Materiales (IMEYMAT), CEIMAR, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain); González, M. [U.S Naval Research Laboratory, 4555 Overlook Ave. SW, Washington D.C. 20375 (United States); Sotera Defense Solutions, 430 National Business Pkwy # 100, Annapolis Junction, MD 20701 (United States); Clark, K.; Pinsunkajana, P. [Intelligent Epitaxy Technology, Inc. Richardson, TX, 75801 (United States); Hoven, N.; Hubbard, S. [Rochester Institute of Technology, 85 Lomb Memorial Drive, Rochester, NY 14623 (United States); Tomasulo, S.; Walters, J.R. [U.S Naval Research Laboratory, 4555 Overlook Ave. SW, Washington D.C. 20375 (United States); Molina, S.I. [INNANOMAT group, Departamento de Ciencia de los Materiales e I. M. y Q. I., Instituto Universitario de Investigación en Microscopía Electrónica y Materiales (IMEYMAT), CEIMAR, Universidad de Cádiz, 11510 Puerto Real, Cádiz (Spain)

    2017-02-15

    Highlights: • A post-growth annealing under As overpressure over 500 °C for several minutes induces a blue-shift in the InAlAsSb emission. • TEM analysis evidences that the small compositional fluctuations of the as-grown samples disappear after being annealed. • Annealing stimulates atomic diffusion of the quaternary, homogenizing their constituents and enhancing structural quality. - Abstract: The effect of a post-growth thermal treatment in two different heterostructures with InAlAsSb as the top layer grown by molecular beam epitaxy lattice-matched to InP, have been studied by diffraction contrast transmission electron microscopy (TEM). This novel top cell layer material with application in ultra-high efficiency solar cells were grown on (001) InP substrate with or without an InGaAs buffer layer. Initial photoluminescence (PL) measurements revealed deviations from their predicted bandgap, suggesting non-random atomic distribution of the quaternary layer. Then, a thermal annealing was performed at different temperatures and times. The effect on the structure of the InAlAsSb active layer caused by the new arrangement of layers and the post-growth annealing treatments has been reported. Our results show that the small compositional fluctuations of the as-grown heterostructures disappear after being annealed, and the bandgap energy correspondingly increases towards the predicted value.

  11. The effects of Mg incorporation and annealing temperature on the ...

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 88; Issue 2. The effects of Mg incorporation and annealing temperature on the physicochemical properties and antibacterial activity against {\\it Listeria monocytogenes} of ZnO nanoparticles. NIMA SHADAN ALI ABDOLAHZADEH ZIABARI RAFIEH MERAAT KAMYAR ...

  12. Effects of nitrogen annealing on surface structure, silicide formation ...

    Indian Academy of Sciences (India)

    Effects of nitrogen annealing on structural and magnetic properties of Co/Si (100) up to 700◦C has been studied in this ... are dictated by uniformity of interdiffusion parallel to inter- ..... AFM images confirmed increase in the nanocrystalline.

  13. Annealing effect on the reproducibility of Josephson Junctions made by ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Sirena, M; Matzen, S; Bergeal, N; Lesueur, J [Laboratoire Photons Et Matiere, CNRS, ESPCI, 10 Rue Vauquelin 75231 Paris (France) (France); Faini, G [Laboratoire de Photonique et Nanostructures, Route de Nozay, 91460 Marcoussis (France) (France); Bernard, R; Briatico, J; Crete, D [UMR-CNRS/THALES, Route D128, 91767 Palaiseau (France) (France)], E-mail: martin.sirena@espci.fr

    2008-02-01

    We have studied the annealing effects on the transport properties of High Tc Josephson Junctions (JJ) made by ion irradiation. Several JJ were measured for different annealing times and the experimental data were compared to numerical simulations. We have successfully used a vacancy-interstitial annihilation mechanism to describe the evolution of the JJ coupling temperature (T{sub J}) and the homogeneity of a JJ array, related to the evolution of the defects density mean value and its distribution width. For sufficient long annealing times (t > 600 min), {delta}T{sub J} was significatively reduced. This result appears to be very encouraging for future applications where the spread in JJ characteristics has to be as low as possible.

  14. Annealing effect on the reproducibility of Josephson Junctions made by ion irradiation

    International Nuclear Information System (INIS)

    Sirena, M; Matzen, S; Bergeal, N; Lesueur, J; Faini, G; Bernard, R; Briatico, J; Crete, D

    2008-01-01

    We have studied the annealing effects on the transport properties of High Tc Josephson Junctions (JJ) made by ion irradiation. Several JJ were measured for different annealing times and the experimental data were compared to numerical simulations. We have successfully used a vacancy-interstitial annihilation mechanism to describe the evolution of the JJ coupling temperature (T J ) and the homogeneity of a JJ array, related to the evolution of the defects density mean value and its distribution width. For sufficient long annealing times (t > 600 min), ΔT J was significatively reduced. This result appears to be very encouraging for future applications where the spread in JJ characteristics has to be as low as possible

  15. In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films

    Directory of Open Access Journals (Sweden)

    Hans F. Wardenga

    2015-02-01

    Full Text Available Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS and ex situ by X-ray diffraction (XRD, optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films.

  16. Sensitization of erbium in silicon-rich silica : the effect of annealing temperature and hydrogen passivation

    International Nuclear Information System (INIS)

    Wilkinson, A.R.; Forcales, M.; Elliman, R.G.

    2005-01-01

    This paper reports on the effect of annealing temperature and hydrogen passivation on the excitation cross-section and photoluminescence of erbium in silicon-rich silica. Samples were prepared by co-implantation of Si and Er into SiO 2 followed by a single thermal anneal at temperatures ranging from 800 to 1100 degrees C, and with or without hydrogen passivation performed at 500 degrees C. Using time-resolved photoluminescence, the effective erbium excitation cross-section is shown to increase by a factor 3, while the number of optically active erbium ions decreases by a factor of 4 with increasing annealing temperature. Hydrogen passivation is shown to increase the luminescence intensity and to shorten the luminescence lifetime at 1.54 μm only in the presence of Si nanocrystals. The implications fo these results for realizing a silicon-based optical amplifier are also discussed. (author). 19 refs., 3 figs

  17. Effects of annealing on the corrosion behavior and mechanical properties of Ti-Al-V alloy

    International Nuclear Information System (INIS)

    Kim, T. K.; Choi, B. S.; Baek, J. H.; Choi, B. K.; Jeong, Y. H.; Lee, D. J.; Jang, M. H.; Jeong, Y. H.

    2002-01-01

    In order to determine the annealing condition after cold rolling, the effects of annealing on the corrosion behavior and mechanical properties of Ti-Al-V alloy were evaluated. The results of tensile tests at room temperature showed that the strengths and the ductility were almost independent of the annealing temperature. The results of hardness test also revealed that the hardness was independent of the annealing, However, the results of corrosion test in an ammoniated water of pH 9.98 at 360 .deg. C showed that the corrosion resistance depended on the annealing temperature, and the corrosion rate was accelerated with increasing annealing temperature. Hydrogen contents absorbed during the corrosion test of 120 days also increased with the annealing temperature. It may be attributed to the growth of α' precipitates by annealing. It is thus suggested that the lower annealing temperatures provide the better corrosion properties without degrading the tensile properties

  18. Effect of annealing on parameters of synthetic opal

    International Nuclear Information System (INIS)

    Gajiev, G M; Kurdyukov, D A; Travnikov, V V

    2006-01-01

    We report on the effect of high temperature annealing on the reflection spectra of synthetic opals. The analysis of conditions for simultaneous diffraction on the (111) planes parallel and inclined to the sample surface has shown that both annealed and unannealed opals are compressed along the growth [111] axis and the shape of the SiO 2 balls forming the opals' close packed structure can be described as spheroidal. The structure parameters were evaluated from the analysis of the angular dependences of the peak positions in the Bragg reflection spectra of unfilled and glycerol-filled samples. The major effect of annealing is due to the sintering (interpenetration) of the structural elements of opals. The maximum temperature of 1050 deg. C leads to a 10-fold increase in the degree of spheroid sintering. As a result, the interspheroid spacing decreases by over 10%, while the filling factor increases from 0.75 to 0.96 together with the effective dielectric constant of the opal as a whole (from 1.74 to 2.08). Sintering takes place not only between spheroids, but also inside spheroids between the α-SiO 2 nanoparticles constituting them. This results in a noticeable (by ∼7%) increase in the dielectric constant of opal spheroids

  19. Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Shaneyfelt, M.R.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

    1998-02-01

    Capacitance-voltage and thermally-stimulated-current techniques are used to estimate trapped hole and electron densities in MOS oxides as functions of irradiation and isochronal anneal temperature. Trapped-charge annealing and compensation effects are discussed

  20. Quantum Annealing and Quantum Fluctuation Effect in Frustrated Ising Systems

    OpenAIRE

    Tanaka, Shu; Tamura, Ryo

    2012-01-01

    Quantum annealing method has been widely attracted attention in statistical physics and information science since it is expected to be a powerful method to obtain the best solution of optimization problem as well as simulated annealing. The quantum annealing method was incubated in quantum statistical physics. This is an alternative method of the simulated annealing which is well-adopted for many optimization problems. In the simulated annealing, we obtain a solution of optimization problem b...

  1. Effect of isothermal annealing on degree of crystallinity and mechanical properties of poly(l-lactide-co-glycolide)

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Na; Wang, Liansong [Chengdu Institute of Organic Chemistry, Chinese Academy of Sciences, Chengdu, Sichuan, 610041 (China); Graduated School of Chinese Academy of Sciences, Beijing, 100039 (China); Huang, Dongling; Zhang, Tianyao; Zhang, Lifang [Chengdu Institute of Organic Chemistry, Chinese Academy of Sciences, Chengdu, Sichuan, 610041 (China); Xiong, Chengdong

    2010-03-15

    We investigated the effect of isothermal annealing on the degree of crystallinity and mechanical properties of a random copolymer-poly(l-lactide-co -glycolide) (PLLGA)-with monomer molar ratios of 85/15 (PLLGA85/15) by performing polarizing optical microscopy, differential scanning calorimetry, and X-ray diffraction, and studying the tensile properties. Isothermal annealing of PLLGA at 130 C was conducted to improve the degree of crystallinity of the copolymer; the maximum degree of crystallinity (44.5%) was achieved after 60 min of annealing. The crystal size/perfection was observed to increase with annealing time. The highest tensile strength of 65.8 MPa was achieved after 80 min of annealing. However, the degree of crystallinity and tensile strength can only reach to certain extent. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Forecasting nonlinear chaotic time series with function expression method based on an improved genetic-simulated annealing algorithm.

    Science.gov (United States)

    Wang, Jun; Zhou, Bi-hua; Zhou, Shu-dao; Sheng, Zheng

    2015-01-01

    The paper proposes a novel function expression method to forecast chaotic time series, using an improved genetic-simulated annealing (IGSA) algorithm to establish the optimum function expression that describes the behavior of time series. In order to deal with the weakness associated with the genetic algorithm, the proposed algorithm incorporates the simulated annealing operation which has the strong local search ability into the genetic algorithm to enhance the performance of optimization; besides, the fitness function and genetic operators are also improved. Finally, the method is applied to the chaotic time series of Quadratic and Rossler maps for validation. The effect of noise in the chaotic time series is also studied numerically. The numerical results verify that the method can forecast chaotic time series with high precision and effectiveness, and the forecasting precision with certain noise is also satisfactory. It can be concluded that the IGSA algorithm is energy-efficient and superior.

  3. Effect of the annealing temperature for the hydrogen Q-degradation on superconducting cavities

    International Nuclear Information System (INIS)

    Ota, Tomoko; Sukenobu, Satoru; Tanabe, Yoshio; Onishi, Yoshimichi; Noguchi, Shuichi; Ono, Masaaki; Saito, Kenji; Shishido, Toshio; Yamazaki, Yoshishige

    1997-01-01

    Hydrogen Q-degradation was studied in niobium superconducting cavities prepared by barrel polishing, and electropolishing without annealing, though a fast cooling down of cavities. Cavity performance with various annealing temperature were tested using a 1.3GHz single-cell cavity to compare the effects of annealing temperature for hydrogen Q-degradation. (author)

  4. Tailoring of magnetoimpedance effect and magnetic softness of Fe-rich glass-coated microwires by stress- annealing.

    Science.gov (United States)

    Zhukova, V; Blanco, J M; Ipatov, M; Churyukanova, M; Taskaev, S; Zhukov, A

    2018-02-16

    There is a pressing need for improving of the high-frequency magneto-impedance effect of cost-effective soft magnetic materials for use in high-performance sensing devices. The impact of the stress-annealing on magnetic properties and high frequency impedance of Fe-rich glass-coated microwires was studied. Hysteresis loops of Fe-rich microwires have been considerably affected by stress- annealing. In stress-annealed Fe- rich microwire we obtained drastic decreasing of coercivity and change of character of hysteresis loop from rectangular to linear. By controlling stress-annealing conditions (temperature and time) we achieved drastic increasing (by order of magnitude) of giant magnetoimpedance ratio. Coercivity, remanent magnetization, diagonal and of-diagonal magnetoimpedance effect of Fe-rich microwires can be tuned by stress-annealing conditions: annealing temperature and time. Observed experimental results are discussed considering relaxation of internal stresses, compressive "back-stresses" arising after stress annealing and topological short range ordering.

  5. Effects of annealing on tensile property and corrosion behavior of Ti-Al-Zr alloy

    International Nuclear Information System (INIS)

    Kim, Tae-Kyu; Choi, Byung-Seon; Jeong, Yong-Hwan; Lee, Doo-Jeong; Chang, Moon-Hee

    2002-01-01

    The effects of annealing on the tensile property and corrosion behavior of Ti-Al-Zr alloy were evaluated. The annealing in the temperature range from 500 to 800 deg. C for 1 h induced the growth of the grain and the precipitate sizes. The results of tensile tests at room temperature showed that the strengths and the ductility were almost independent of the annealing temperature. However, the results of corrosion test in an ammonia aqueous solution of pH 9.98 at 360 deg. C showed that the corrosion resistance depended on the annealing temperature, and the corrosion rate was accelerated with increasing annealing temperature. Hydrogen contents absorbed during the corrosion test of 220 days also increased with the annealing temperature. It could be attributed to the growth of Fe-rich precipitates by annealing. It is thus suggested that the lower annealing temperatures provide the better corrosion properties without degrading the tensile properties

  6. Annealing time dependent up-conversion luminescence enhancement in magnesium–tellurite glass

    Energy Technology Data Exchange (ETDEWEB)

    Amjad, Raja J., E-mail: rajajunaid25@gmail.com [Advanced Optical Material Research Group, Faculty of Science, Universiti Teknologi Malaysia, Skudai, Johor bahru 81310 (Malaysia); Centre for Solid State Physics, University of the Punjab, QAC, Lahore 54590 (Pakistan); Sahar, M.R.; Ghoshal, S.K.; Dousti, M.R. [Advanced Optical Material Research Group, Faculty of Science, Universiti Teknologi Malaysia, Skudai, Johor bahru 81310 (Malaysia); Riaz, S. [Centre for Solid State Physics, University of the Punjab, QAC, Lahore 54590 (Pakistan); Samavati, A.R.; Arifin, R. [Advanced Optical Material Research Group, Faculty of Science, Universiti Teknologi Malaysia, Skudai, Johor bahru 81310 (Malaysia); Naseem, S. [Centre for Solid State Physics, University of the Punjab, QAC, Lahore 54590 (Pakistan)

    2013-04-15

    Silver nanoparticles (NPs) embedded Er{sup 3+} ions doped magnesium–tellurite glasses are prepared using melt quenching technique. Heat treatment with different time intervals above the glass transition temperature is applied in order to reduce the silver ions (Ag{sup +}) to silver NPs (Ag{sup o}). The transmission electron microscopy (TEM), differential thermal analyses (DTA), UV–vis-NIR absorption spectroscopy and photoluminescence (PL) spectroscopy are used to examine annealing time dependent structural and optical properties. The characteristics temperatures such as glass transition temperature (T{sub g}), crystallization temperature (T{sub c}) and melting temperature (T{sub m}) obtained from DTA for an as prepared sample are 322 °C, 450 °C and 580 °C, respectively. TEM image clearly shows the homogeneous distribution of silver NPs with an average diameter ∼12 nm. The observed localized surface plasmon resonance (LSPR) band is evidenced at 534 nm. Furthermore, the infrared to visible frequency up-conversion (UC) emission under 786 nm excitation exhibits three emission bands centered at 532 nm, 554 nm and 634 nm corresponding to {sup 2}H{sub 11/2}→{sup 4}I{sub 15/2}, {sup 4}S{sub 3/2}→{sup 4}I{sub 15/2} and {sup 4}F{sub 9/2}→{sup 4}I{sub 15/2} transitions of Er{sup 3+}, respectively. Intensity of all the bands is found to enhance by increasing the annealing time up to 24 h. However, further increase in the annealing time duration (∼40 h) reduces the intensity. Enhancement in the luminescence intensity is understood in terms of the local field effect of the silver NPs whereas the quenching is attributed to the energy transfer from Er{sup 3+} ions to silver NPs. -- Highlights: ► Er{sup 3+}-doped silver NPs embedded magnesium–tellurite glasses are prepared. ► TEM confirms the successful precipitation of spherical NPs by heat treatment (HT). ► Luminescence is enhanced due to the growth of NPs after HT up to 24 h. ► With HT>24 h (40 h

  7. Effect of Doping Phosphorescent Material and Annealing Treatment on the Performance of Polymer Solar Cells

    Directory of Open Access Journals (Sweden)

    Zixuan Wang

    2013-01-01

    Full Text Available A series of polymer solar cells (PSCs with P3HT:PCBM or P3HT:PCBM:Ir(btpy3 blend films as the active layer were fabricated under the same conditions. Effects of phosphorescent material Ir(btpy3 doping concentration and annealing temperature on the performance of PSCs were investigated. The short-circuit current density (Jsc and open-circuit voltage (Voc are increased by adopting P3HT:PCBM:Ir(btpy3 blend films as the active layer when the cells do not undergo annealing treatment. The increased Jsc should be attributed to the increase of photon harvesting induced by doping phosphorescent material Ir(btpy3 and the effective energy transfer from Ir(btpy3 to P3HT. The effective energy transfer from Ir(btpy3 to P3HT was demonstrated by time-resolved photoluminescence (PL spectra. The increased Voc is due to the photovoltaic effect between Ir(btpy3 and PCBM. The power conversion efficiency (PCE of PSCs with P3HT:PCBM as the active layer is increased from 0.19% to 1.49% by annealing treatment at 140°C for 10 minutes. The PCE of PSCs with P3HT:PCBM:Ir(btpy3 as the active layer is increased from 0.49% to 0.95% by annealing treatment at lower temperature at 100°C for 10 minutes.

  8. Effect of Annealing on Microstructures and Hardening of Helium-Hydrogen-Implanted Sequentially Vanadium Alloys

    Science.gov (United States)

    Jiang, Shaoning; Wang, Zhiming

    2018-03-01

    The effect of post-irradiation annealing on the microstructures and mechanical properties of V-4Cr-4Ti alloys was studied. Helium-hydrogen-irradiated sequentially V-4Cr-4Ti alloys at room temperature (RT) were undergone post-irradiation annealing at 450 °C over periods of up to 30 h. These samples were carried out by high-resolution transmission electron microscopy (HRTEM) observation and nanoindentation test. With the holding time, large amounts of point defects produced during irradiation at RT accumulated into large dislocation loops and then dislocation nets which promoted the irradiation hardening. Meanwhile, bubbles appeared. As annealing time extended, these bubbles grew up and merged, and finally broke up. In the process, the size of bubbles increased and the number density decreased. Microstructural changes due to post-irradiation annealing corresponded to the change of hardening. Dislocations and bubbles are co-contributed to irradiation hardening. With the holding time up to 30 h, the recovery of hardening is not obvious. The phenomenon was discussed by dispersed barrier hardening model and Friedel-Kroupa-Hirsch relationship.

  9. Structural relaxation dynamics and annealing effects of sodium silicate glass.

    Science.gov (United States)

    Naji, Mohamed; Piazza, Francesco; Guimbretière, Guillaume; Canizarès, Aurélien; Vaills, Yann

    2013-05-09

    Here we report high-precision measurements of structural relaxation dynamics in the glass transition range at the intermediate and short length scale for a strong sodium silicate glass during long annealing times. We evidence for the first time the heterogeneous dynamics at the intermediate range order by probing the acoustic longitudinal frequency in the GHz region by Brillouin light scattering spectroscopy. Or, from in-situ Raman measurements, we show that relaxation is indeed homogeneous at the interatomic length scale. Our results show that the dynamics at the intermediate range order contains two distinct relaxation time scales, a fast and a slow component, differing by about a 10-fold factor below Tg and approaching to one another past the glass transition. The slow relaxation time agrees with the shear relaxation time, proving that Si-O bond breaking constitutes the primary control of structural relaxation at the intermediate range order.

  10. Effects of thermal annealing temperature and duration on hydrothermally grown ZnO nanorod arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Shin, C.M.; Heo, J.H.; Leem, J.Y. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of)], E-mail: hhryu@inje.ac.kr; Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Shin, B.C.; Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1, Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-03-15

    In this study, the effects of thermal annealing temperature and duration on ZnO nanorod arrays fabricated by hydrothermal method were investigated. The annealed ZnO/Si(1 1 1) substrate was used for ZnO nanorod array growth. The effects of annealing treatment on the structural and optical properties were investigated by scanning electron microscopy, X-ray diffraction, and room-temperature photoluminescence measurements. With the annealing temperature of 750 {sup o}C and the annealing duration of 10 min, both the structural and optical properties of the ZnO nanorod arrays improved significantly, as indicated in the X-ray diffraction and photoluminescence measurement.

  11. Annealing effects in solid-state track recorders

    International Nuclear Information System (INIS)

    Gold, R.; Roberts, J.H.; Ruddy, F.H.

    1981-01-01

    Current analyses of the annealing process in Solid State Track Recorders (SSTR) reveal fundamental misconceptions. The use of the Arrhenius equation to describe the decrease in track density resulting from annealing is shown to be incorrect. To overcome these deficiencies, generalized reaction rate theory is used to describe the annealing process in SSTR. Results of annealing experiments are used to guide this theoretical formulation. Within this framework, the concept of energy per etchable defect for SSTR is introduced. A general correlation between sensitivity and annealing susceptibility in SSTR is deduced. In terms of this general theory, the apparent correlation between fission track size and fission track density observed under annealing is readily explained. Based on this theoretical treatment of annealing phenomena, qualitative explanations are advanced for current enigmas in SSTR cosmic ray work

  12. The effect of humidity on annealing of polymer optical fibre bragg gratings

    DEFF Research Database (Denmark)

    Woyessa, Getinet; Nielsen, Kristian; Bang, Ole

    2015-01-01

    The effect of humidity on annealing of PMMA based microstructured polymer optical fiber (mPOF) Bragg gratings is studied. Polymer optical fibers (POFs) are annealed in order to release stress formed during the fabrication process. Un-annealed fibers will have high hysteresis and low sensitivity...... to humidity, particularly when operated at high temperature. Typically annealing of PMMA POFs is done at 80oC in an oven with no humidity control and therefor at low humidity. The response to humidity of PMMA FBGs annealed at different levels of humidity at the same temperature has also been studied. PMMA...

  13. Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films.

    Science.gov (United States)

    Vandana; Batra, Neha; Gope, Jhuma; Singh, Rajbir; Panigrahi, Jagannath; Tyagi, Sanjay; Pathi, P; Srivastava, S K; Rauthan, C M S; Singh, P K

    2014-10-21

    Thermal ALD deposited Al2O3 films on silicon show a marked difference in surface passivation quality as a function of annealing time (using a rapid thermal process). An effective and quality passivation is realized in short anneal duration (∼100 s) in nitrogen ambient which is reflected in the low surface recombination velocity (SRV passivation. Both as-deposited and low thermal budget annealed films show the presence of positive fixed charges and this is never been reported in the literature before. The role of field and chemical passivation is investigated in terms of fixed charge and interface defect densities. Further, the importance of the annealing step sequence in the MIS structure fabrication protocol is also investigated from the view point of its effect on the nature of fixed charges.

  14. Effect of thermal annealing on a novel polyamide–imide polymer membrane for aggressive acid gas separations

    KAUST Repository

    Vaughn, Justin T.

    2012-05-01

    A fluorinated, 6FDA based polyamide-imide is investigated for the purification of CH 4 from CO 2 and H 2S containing gas streams. Dense polymer films were thermally annealed and showed that increased annealing temperatures at constant annealing time caused transport behavior that does not resemble physical aging. Free volume increased after annealing at 200°C for 24h relative to annealing at 150°C for the same time. CO 2 and CH 4 permeabilities and diffusivities did not decrease as a result of the higher annealing temperature, and in fact, were shown to increase slightly. A change to the intrinsic microstructure that cannot be described by simple, densification based physical aging is hypothesized to be the reason for this trend. Furthermore, annealing increased CO 2 induced plasticization resistance and a temperature of 200°C was shown to have the greatest effect on plasticization suppression. Annealing at 200°C for 24h suppressed pure gas CO 2 plasticization up to 450psia. Fluorescence spectroscopy revealed increased intramolecular charge transfer, which is presumably due to increased electron conjugation over the N-phenyl bond. Additionally, intermolecular charge transfer increased with thermal annealing, as inferred from fluorescence intensity measurements and XRD patterns. 50/50 CO 2/CH 4 mixed gas permeation measurements reveal stable separation performance up to 1000psia. Ternary mixed gas feeds containing toluene/CO 2/CH 4 and H 2S/CO 2/CH 4 show antiplasticization, but more importantly, selectivity losses due to plasticization did not occur up to 900psia of total feed pressure. These results show that the polyamide-imide family represents a promising class of separation materials for aggressive acid gas purifications. © 2012 Elsevier B.V.

  15. Effect of thermal annealing on a novel polyamide–imide polymer membrane for aggressive acid gas separations

    KAUST Repository

    Vaughn, Justin T.; Koros, William J.; Johnson, J.R.; Karvan, Oguz

    2012-01-01

    A fluorinated, 6FDA based polyamide-imide is investigated for the purification of CH 4 from CO 2 and H 2S containing gas streams. Dense polymer films were thermally annealed and showed that increased annealing temperatures at constant annealing time caused transport behavior that does not resemble physical aging. Free volume increased after annealing at 200°C for 24h relative to annealing at 150°C for the same time. CO 2 and CH 4 permeabilities and diffusivities did not decrease as a result of the higher annealing temperature, and in fact, were shown to increase slightly. A change to the intrinsic microstructure that cannot be described by simple, densification based physical aging is hypothesized to be the reason for this trend. Furthermore, annealing increased CO 2 induced plasticization resistance and a temperature of 200°C was shown to have the greatest effect on plasticization suppression. Annealing at 200°C for 24h suppressed pure gas CO 2 plasticization up to 450psia. Fluorescence spectroscopy revealed increased intramolecular charge transfer, which is presumably due to increased electron conjugation over the N-phenyl bond. Additionally, intermolecular charge transfer increased with thermal annealing, as inferred from fluorescence intensity measurements and XRD patterns. 50/50 CO 2/CH 4 mixed gas permeation measurements reveal stable separation performance up to 1000psia. Ternary mixed gas feeds containing toluene/CO 2/CH 4 and H 2S/CO 2/CH 4 show antiplasticization, but more importantly, selectivity losses due to plasticization did not occur up to 900psia of total feed pressure. These results show that the polyamide-imide family represents a promising class of separation materials for aggressive acid gas purifications. © 2012 Elsevier B.V.

  16. The precipitation in annealing and its effect on permittivity of Fe–Si–Al powders

    International Nuclear Information System (INIS)

    Li, Gang; Cui, Yin; Zhang, Nan; Wang, Xin; Xie, Jian Liang

    2016-01-01

    SEM images show that some precipitates distributed on the surface of as-annealed Fe–Si–Al powders. Subsequent experimental results indicate that both morphology and microstructure of as-annealed Fe–Si–Al powders change with increasing annealing temperature. Meanwhile, dielectric properties analysis suggesting that both real part ε′ and imaginary part ε″ of the Fe–Si–Al powders decrease significantly after annealed at 450 °C or higher temperature. We assume that it’s the precipitates with low electrical conductivity developed on the surface of powders that increase the surface resistivity of as-annealed powders and leading to a lower imagine part of permittivity. The drop of real part ε′ ascribed to the weakened interfacial polarization which resulted from the decrease of structural defects such as grain boundaries and interfaces during annealing process. - Highlights: • As-milled Fe–Si–Al powders were annealed at various temperature. • The change of morphology and microstructure of as-annealed Fe–Si–Al was examined. • Complex permittivity decrease significantly after annealed over 400 °C and permeability increase as annealing temperature rises. • The precipitation process in annealing and its effect on permittivity were analyzed.

  17. Effects of surface polishing and annealing on the optical conductivity of intermetallic compounds

    CERN Document Server

    Rhee, J Y

    1999-01-01

    The optical conductivity spectra of several intermetallic compounds were measured by spectroscopic ellipsometry. Three spectra were measured for each compound; just after the sample was mechanically polished, at high temperature, and after the sample was annealed at 110 .deg. C for at least one day and cooled to room temperature. An equiatomic FeTi alloy showed the typical effects of annealing after mechanical polishing of surface. The spectrum after annealing had a larger magnitude and sharper structures than the spectrum before annealing. We also observed shifts of peaks in the spectrum. A relatively low-temperature annealing gave rise to unexpectedly substantial effects, and the effects were explained by recrystallization and/or a disorder -> order transition of the surface of the sample which was damaged and, hence, became highly disordered by mechanical polishing. Similar effects were also observed when the sample temperature was lowered. The observed changes upon annealing could partly be explained by p...

  18. The effect of annealing atmosphere on the thermoluminescence of synthetic calcite

    International Nuclear Information System (INIS)

    Pagonis, Vasilis

    1998-01-01

    Samples of high purity calcite powder were annealed in air, nitrogen and carbon dioxide atmospheres in the temperature range 300-700 deg. C and in atmospheric pressure. The samples were subsequently irradiated and the effect of the annealing atmosphere and temperature on the thermoluminescence (TL) of the samples was studied. Our results show that both carbonate and oxygen ions play an important part in the TL of calcite annealed in this temperature range. The intensities of the TL signal in the nitrogen and carbon dioxide anneals rise continuously with the annealing temperature. For all annealing temperatures it was found that the carbon dioxide atmosphere caused an increase in the observed TL signal as compared with anneals in an inert nitrogen atmosphere, while the shape of the TL glow curves remained the same. This increase in the observed TL signal is explained via the surface adsorption of carbonate ions. The shape and location of the TL peaks suggest that samples annealed in air exhibit a different type of TL center than samples annealed in nitrogen and carbon dioxide atmospheres. A possible mechanism for the role of oxygen ions involves a surface adsorption process and a subsequent diffusion of oxygen ions in the bulk of the crystal. Annealing of the samples in air at temperatures T>600 deg. C causes a collapse of the TL signal, in agreement with previous studies of calcite powders. No such collapse of the TL signal is observed for the nitrogen and carbon dioxide anneals, suggesting that a different type of TL center and/or recombination center is involved in air anneals. Arrhenius plots for the air anneals yield an activation energy E=0.45±0.05 eV, while the carbon dioxide and nitrogen anneals yield a lower activation energy E=0.28±0.04 eV

  19. Steel impurity element effects on postirradiation properties recovery by annealing

    International Nuclear Information System (INIS)

    Hawthorne, J.R.

    1987-01-01

    The influence of copper content and phosphorus content on notch ductility recovery by 399 0 C postirradiation heat treatment was explored for A 533-B and A 302-B pressure vessel steels. Charpy-V (C/sub V/) specimens for the investigation were obtained from ten plates produced from four (4-way split) laboratory melts. The plates were 15.2 mm thick but were heat treated to reproduce the microstructure of 150-mm and thicker A 302-B plates at the quarter-thickness location. The C/sub V/ specimens were irradiated in two assemblies at 288 0 C (550 0 F) to a fluence of --2.5 x 10/sup 19/ n/cm/sup 2/ in a light-water-cooled and moderated test reactor. Notch ductility properties in the asirradiated and 399 0 C, 168 h postirradiation-annealed conditions were determined. In addition, separate sets of specimens were thermally conditioned at 288 0 C and at 288 0 C followed by 399 0 C to benchmark the effects of temperature in the absence of irradiation. The results indicate that copper has a significant influence on the magnitude of residual embrittlement after annealing. In contrast, phosphorus contents in the range of 0.002 to 0.025% were found not to have an effect on residual embrittlement either in high or low copper steels. Essentially full recovery in 41-J transition temperature was observed for high phosphorus, low copper content steels. Effects of nickel alloying on recovery behavior were also investigated through data comparisons for A 302-B versus A 533-B plates

  20. Implantation and annealing effects in molecular organic films

    CERN Document Server

    Pakhomov, G L; Shashkin, V I; Tura, J M; Ribo, J M; Ottaviano, L

    2002-01-01

    Ion implantation and annealing effects on the surface of phthalocyanine thin films have been studied by means of atomic force microscopy and electron spectroscopy for chemical analysis. Both the topology and the chemical composition of the surface are affected by irradiation. The influence of the irradiation dose is shown. The chemical degradation of the layer results mainly in the decrease of atomic concentration of nitrogen and chlorine, and in the increase of atomic concentration of oxygen. At highest dose, carbonization becomes important. Furthermore, N 1s, C 1s and Cl 2p core levels testify that the formation of new chemical species occurs in implanted pthalocyanine films. All these processes are modified by subsequent heat treatment in different ways, depending on the applied implantation fluence.

  1. Memory effect of ball-milled and annealed nanosized hematite

    International Nuclear Information System (INIS)

    Bercoff, P.G.; Bertorello, H.R.; Oliva, M.I.

    2007-01-01

    Fine particles of hematite (mean size 55 nm) were produced by ball milling a mixture of hematite and pure Fe and annealing at 1000 o C. X-ray diffraction (XRD) and Moessbauer spectroscopy show that only α-Fe 2 O 3 is present in the final product, with lattice and Moessbauer parameters that correspond to bulk hematite. ZFC and FC magnetization measurements were performed from 5 to 300 K, at different applied fields. Two magnetic regimes were observed: one at low temperatures (≤100 K) that we ascribe to the magnetic moments in the outer shell of the particles that couple to the magnetic moments in the core, and another at higher temperature that corresponds to the Morin transition, finding that the Morin temperature is T M =246 K. The memory effect is clearly observed in magnetic measurements that start from different remanence states and explained as dependent on the ordering of the magnetic moments within the particles

  2. Effect of heat moisture treatment and annealing on physicochemical ...

    African Journals Online (AJOL)

    Red sorghum starch was physically modified by annealing and heat moisture treatment. The swelling power and solubility increased with increasing temperature range (60-90°), while annealing and heatmoisture treatment decreased swelling power and solubility of starch. Solubility and swelling were pH dependent with ...

  3. A proposal simulated annealing algorithm for proportional parallel flow shops with separated setup times

    Directory of Open Access Journals (Sweden)

    Helio Yochihiro Fuchigami

    2014-08-01

    Full Text Available This article addresses the problem of minimizing makespan on two parallel flow shops with proportional processing and setup times. The setup times are separated and sequence-independent. The parallel flow shop scheduling problem is a specific case of well-known hybrid flow shop, characterized by a multistage production system with more than one machine working in parallel at each stage. This situation is very common in various kinds of companies like chemical, electronics, automotive, pharmaceutical and food industries. This work aimed to propose six Simulated Annealing algorithms, their perturbation schemes and an algorithm for initial sequence generation. This study can be classified as “applied research” regarding the nature, “exploratory” about the objectives and “experimental” as to procedures, besides the “quantitative” approach. The proposed algorithms were effective regarding the solution and computationally efficient. Results of Analysis of Variance (ANOVA revealed no significant difference between the schemes in terms of makespan. It’s suggested the use of PS4 scheme, which moves a subsequence of jobs, for providing the best percentage of success. It was also found that there is a significant difference between the results of the algorithms for each value of the proportionality factor of the processing and setup times of flow shops.

  4. Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing.

    Science.gov (United States)

    Lu, Qifeng; Zhao, Chun; Mu, Yifei; Zhao, Ce Zhou; Taylor, Stephen; Chalker, Paul R

    2015-07-29

    A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD). The results indicated that: (1) more traps were observed compared to the conventional capacitance-voltage characterization method in LaZrO x ; (2) the time-dependent trapping/de-trapping was influenced by the edge time, width and peak-to-peak voltage of a gate voltage pulse. Post deposition annealing was performed at 700 °C, 800 °C and 900 °C in N₂ ambient for 15 s to the samples with 200 ALD cycles. The effect of the high temperature annealing on oxide traps and leakage current were subsequently explored. It showed that more traps were generated after annealing with the trap density increasing from 1.41 × 10 12 cm -2 for as-deposited sample to 4.55 × 10 12 cm -2 for the 800 °C annealed one. In addition, the leakage current density increase from about 10 - ⁶ A/cm² at V g = +0.5 V for the as-deposited sample to 10 -3 A/cm² at V g = +0.5 V for the 900 °C annealed one.

  5. Effects of hydrothermal annealing on characteristics of CuInS{sub 2} thin films by SILAR method

    Energy Technology Data Exchange (ETDEWEB)

    Shi Yong, E-mail: sys-99@163.com [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Sciences and Technology, Dalian University of Technology, Dalian 116024 (China); Xue Fanghong [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Sciences and Technology, Dalian University of Technology, Dalian 116024 (China); Li Chunyan [School of Materials, Dalian University of Technology, Dalian 116024 (China); Zhao Qidong; Qu Zhenping; Li Xinyong [Key Laboratory of Industrial Ecology and Environmental Engineering and State Key Laboratory of Fine Chemical, School of Environmental Sciences and Technology, Dalian University of Technology, Dalian 116024 (China)

    2012-07-15

    CuInS{sub 2} thin films have been deposited by successive ionic layer absorption and reaction (SILAR) method, then annealed in a Na{sub 2}S solution (denoted as hydrothermal annealing) at 200 Degree-Sign C for different time. The effect of hydrothermal annealing on the properties of the films was studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and optical absorption spectroscopy. The XRD, TEM and SEM results indicate that well-crystallized CuInS{sub 2} films could be obtained after annealing in 0.1 mol/L Na{sub 2}S solution for 1.5 h. The annealed CuInS{sub 2} films were slightly S-rich and the direct band gap varied from 1.32 to 1.58 eV as the annealing time increased from 0.5 h to 2 h.

  6. Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

    Directory of Open Access Journals (Sweden)

    Qifeng Lu

    2015-07-01

    Full Text Available A powerful characterization technique, pulse capacitance-voltage (CV technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111 substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD. The results indicated that: (1 more traps were observed compared to the conventional capacitance-voltage characterization method in LaZrOx; (2 the time-dependent trapping/de-trapping was influenced by the edge time, width and peak-to-peak voltage of a gate voltage pulse. Post deposition annealing was performed at 700 °C, 800 °C and 900 °C in N2 ambient for 15 s to the samples with 200 ALD cycles. The effect of the high temperature annealing on oxide traps and leakage current were subsequently explored. It showed that more traps were generated after annealing with the trap density increasing from 1.41 × 1012 cm−2 for as-deposited sample to 4.55 × 1012 cm−2 for the 800 °C annealed one. In addition, the leakage current density increase from about 10−6 A/cm2 at Vg = +0.5 V for the as-deposited sample to 10−3 A/cm2 at Vg = +0.5 V for the 900 °C annealed one.

  7. Effect of pressure on the radiation annealing of recoil atoms in chromates

    International Nuclear Information System (INIS)

    Stamouli, M.I.

    1986-01-01

    The effect of pressure on the annealing of recoil atoms by gamma radiation in neutron irradiated potassium chromate, ammonium chromate and ammonium dichromate was studied. In potassium chromate the pressure applied before the gamma-irradiation was found to retard the radiation annealing process. In ammonium chromate and ammonium dichromate the radiation annealing was found to be enhanced in the compressed samples in comparison to the noncompressed ones. (author)

  8. Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Azadeh Jafari

    2014-07-01

    Full Text Available We have reviewed the deposition of titanium nitride (TiN thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD, atomic force microscope (AFM, field emission scanning electron microscopy (FESEM, and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

  9. Annealing effects on resistivity and Hall coefficient of neutron irradiated silicon

    International Nuclear Information System (INIS)

    Biggeri, U.

    1995-01-01

    High Temperature Annealing (HTA) treatment has been carried out on fast-neutron irradiated silicon samples with temperatures up to 300 C. Fluences of irradiation up to 1x10 14 n/cm 2 were used. Before annealing, samples irradiated with fluences higher than 1x10 13 n/cm 2 suffered the type conductivity inversion from n-type to p-type. The changes in the resisitivity and Hall coefficient during each annealing step have been measured by Hall effect analysis. Results indicate the possible creation of acceptors for low temperature annealing up to 150 C and the phosphorous release by E centres at annealing temperatures among 150 C and 200 C. Heating samples up to 300 C allows the recovering of the sample resistivity to its value before irradiation, with the peculiarity that bulks inverted to p-type after irradiation does not come back to n-type after annealing. (orig.)

  10. The effects of thermal annealing in structural and optical properties of RF sputtered amorphous silicon

    International Nuclear Information System (INIS)

    Abdul Fatah Awang Mat

    1988-01-01

    The effect of thermal annealing on structural and optical properties of amorphous silicon are studied on samples prepared by radio-frequency sputtering. The fundamental absorption edge of these films are investigated at room temperature and their respective parameters estimated. Annealing effect on optical properties is interpreted in terms of the removal of voids and a decrease of disorder. (author)

  11. Annealing and etching effects on strain and stress sensitivity of polymer optical fibre Bragg grating sensors

    DEFF Research Database (Denmark)

    Pospori, A.; Marques, C. A.F.; Sáez-Rodríguez, D.

    2017-01-01

    Thermal annealing and chemical etching effects on the strain and stress sensitivity of polymer optical fibre based sensors are investigated. Bragg grating sensors have been photo-inscribed in PMMA optical fibre and their strain and stress sensitivity has been characterised before and after any...... annealing or etching process. The annealing and etching processes have been tried in different sequence in order to investigate their impact on the sensor's performance. Results show with high confidence that fibre annealing can improve both strain and stress sensitivities. The fibre etching can also...... provide stress sensitivity enhancement, however the strain sensitivity changes seems to be random....

  12. Annealing effect on the microstructure and magnetic properties of 14%Cr-ODS ferritic steel

    International Nuclear Information System (INIS)

    Ding, H.L.; Gao, R.; Zhang, T.; Wang, X.P.; Fang, Q.F.; Liu, C.S.

    2015-01-01

    Graphical abstract: TEM images of microstructure for 14%Cr-ODS ferritic steel annealed for 2 h at different temperatures: (a) 600 °C, (b) 800 °C, (c) 950 °C, and (d) 1150 °C, and the evolution trends of coercivity field (H_C) and Vickers microhardness for samples annealed at above temperatures for 2 h and 50 h. - Highlights: • The thermal stability of annealed 14%Cr-ODS ferritic steel was investigated. • The particle size keeps fairly constant with increasing annealing temperature. • The grain size is still 2–4 μm even after annealing for 50 h at 1150 °C. • The hardness and H_C are almost unchanged after annealing from 800 °C to 1150 °C. - Abstract: The microstructure and magnetic properties of the 14%Cr oxide dispersion strengthened (ODS) ferritic steel fabricated by sol–gel and HIP method were investigated by annealing in vacuum for 2 h (at 300, 600, 800, 950 and 1150 °C) and 50 h (at 600, 800, 950 and 1150 °C). Microstructure analysis shows that as the annealing temperature increases, the size of oxide nanoparticles becomes smaller and their dispersion in matrix becomes more homogeneous. Grain size remains stable when the annealing temperature is below 800 °C, while above 800 °C, grain size grows with the increasing annealing temperature and time. The Vickers microhardness and coercivity (H_C) display almost similar evolution trend with annealing temperature for 2 h and 50 h. No obvious recrystallization appears after 1150 °C annealing, which indicates the high microstructural stability of 14%Cr-ODS ferritic steel. The possible mechanism for above behaviors is discussed in this paper.

  13. Post-annealing effects on shallow-junction characteristics caused by 20 keV BGe molecular ion implantation

    International Nuclear Information System (INIS)

    Liang, J.H.; Sang, Y.J.; Wang, C.-H.; Wang, T.W.; Hsu, J.Y.; Niu, H.; Tseng, M.S.

    2005-01-01

    This study examines the post-annealing-dependent behaviors of the shallow junction produced by implanting 10 15 cm -2 20 keV BGe ions into n-type silicon specimens. Post-annealing treatments consisted of one- and two-step annealing including both furnace annealing (FA) and rapid thermal annealing (RTA). Comparison of the one-step FA at 550 deg. C and the one-step RTA at 1050 deg. C revealed that boron depth profiles were slightly diffused in the former but exhibited considerable transient-enhanced diffusion (TED) in the latter. However, both the one-step FA- and RTA-annealed germanium depth profiles barely diffused, while the latter diffusing slightly deeper than the former. The optimum value of junction depth (x j ) times sheet resistance (R s ) was obtained with one-step FA at 550 deg. C for 1 h. The two-step annealing (FA at 550 deg. C and RTA at 1050 deg. C) results showed that the RTA-induced TED in the boron depth profiles could be effectively retarded only when FA took place for more than 3 h. Again, germanium depth profiles are also barely diffused while the corresponding TEDs were larger than those in one-step FA but smaller than those in one-step RTA. Furthermore, the two-step annealing of FA at 550 deg. C for 3 h followed by RTA at 1050 deg. C for 30 s is suggested when attempting to obtain an optimum value of x j R s

  14. Annealing effects on strain and stress sensitivity of polymer optical fibre based sensors

    DEFF Research Database (Denmark)

    Pospori, A.; Marques, C. A. F.; Zubel, M. G.

    2016-01-01

    The annealing effects on strain and stress sensitivity of polymer optical fibre Bragg grating sensors after their photoinscription are investigated. PMMA optical fibre based Bragg grating sensors are first photo-inscribed and then they were placed into hot water for annealing. Strain, stress...... fibre tends to increase the strain, stress and force sensitivity of the photo-inscribed sensor....

  15. Effects of different annealing atmospheres on the properties of cadmium sulfide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yücel, E., E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Kahraman, S. [Department of Metallurgy and Material Engineering, Faculty of Technology, Mustafa Kemal University, 31034 Hatay (Turkey); Güder, H.S. [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

    2015-08-15

    Graphical abstract: The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. - Highlights: • Compactness and smoothness of the films were enhanced after sulfur annealing. • Micro-strain values of some films were improved after sulfur annealing. • Dislocation density values of some films were improved after sulfur annealing. • Band gap values of the films were improved after sulfur annealing. - Abstract: Cadmium sulfide (CdS) thin films were prepared on glass substrates by using chemical bath deposition (CBD) technique. The effects of different annealing atmospheres (air and sulfur) on the structural, morphological and optical properties of CdS thin films were studied at three different pH values. Compactness and smoothness of the films (especially for pH 10.5 and 11) enhanced after sulfur annealing. pH value of the precursor solution remarkably affected the roughness, uniformity and particle sizes of the films. Based on the analysis of X-ray diffraction (XRD) patterns of the films, micro-strain and dislocation density values of the sulfur-annealed films (pH 10.5 and 11) were found to be lower than those of air-annealed films. Air-annealed films (pH 10.5, 11 and 11.5) exhibited higher transmittance than sulfur-annealed films in the wavelength region of 550–800 nm. Optical band gap values of the films were found between 2.31 eV and 2.36 eV.

  16. Post-annealing effects on pulsed laser deposition-grown GaN thin films

    International Nuclear Information System (INIS)

    Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

    2015-01-01

    In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

  17. Effect of annealing temperature on the mechanical properties of Zircaloy-4 cladding

    International Nuclear Information System (INIS)

    Beauregard, R.J.; Clevinger, G.S.; Murty, K.L.

    1977-01-01

    The mechanical properties of Zircaloy cladding materials are sensitive to those fabrication variables which have an effect on the preferred crystallographic orientation or texture of the finished tube. The effect of one such variable, the final annealing temperature, on various mechanical properties is examined using tube reduced Zircaloy-4 fuel rod cladding annealed at temperatures from 905F to 1060F. This temperature range provides cladding with varying degrees of recrystallization including full recrystallization. The burst strength of the cladding at 650F decreased with the annealing temperature reaching a saturation value at approximately 1000F. The total circumferential elongation increased with the annealing temperature reaching a maximum at approximately 1000F and decreasing at higher temperatures. Hoop creep characteristics of Zircaloy cladding were studied as a function of the annealing temperature using closed-end internal pressurization tests at 750F and hoop stresses of 10, 15, 20 and 25 ksi. The effect of annealing temperature on the room temperature mechanical anisotropy parameters, R and P, was studied. The R-parameter was essentially independent of the annealing temperature while the P-parameter increased with annealing temperature. The mechanical anisotropy parameters were also studied as a function of the test temperature from ambient to approximately 800F using continuously monitored high precision extensometry. (Auth.)

  18. Effect of Annealing on the Thermoluminescence Properties of ZnO Nanophosphor

    Science.gov (United States)

    Kalita, J. M.; Wary, G.

    2017-07-01

    We report the effect of annealing on the thermoluminescence (TL) properties of zinc oxide (ZnO) nanophosphor. The sample was synthesised by a wet chemical process. The characterisation report shows that the size of the grains is within 123.0 nm-160.5 nm. TL measured at 2 K/s from a fresh un-annealed sample irradiated to 60 mGy shows a composite glow curve containing three peaks at 353.2 K, 429.1 K, and 455.3 K. On the other hand, samples annealed at 473 K and 573 K followed by irradiation to 60 mGy do not give TL. However, annealing at 673 K and 773 K followed by irradiation to the same dose produces a glow curve comprising two overlapping peaks at 352.3 K and 370.6 K. In the TL emission spectrum of un-annealed sample, two emission peaks were found in green ( 523 nm) and orange ( 620 nm) regions whereas in annealed samples, only a peak was found in the orange region ( 618 nm). Kinetic analysis shows that the activation energy corresponding to TL peaks at 353.2 K, 429.1 K, and 455.3 K of the un-annealed sample are 0.64 eV, 0.80 eV, and 1.20 eV whereas that of the peaks at 352.3 K and 370.6 K of 673 K and 773 K annealed samples are 0.64 eV and 0.70 eV, respectively. All peaks of un-annealed and annealed samples, except the one at 429.1 K of the un-annealed sample, follow first-order kinetics whereas the peak at 429.1 K follows second-order kinetics. Considering the kinetic and spectral features, an energy band model for ZnO nanophosphor has been proposed.

  19. A study on low temperature transformation ferrite in ultra low carbon IF steels (I) - effects of manganese and annealing conditions

    International Nuclear Information System (INIS)

    Jeong, Woo Chang; Lee, Jae Yeon; Jin, Young Sool

    2001-01-01

    An investigation was made to determine the effects of Mn content and annealing conditions on the formation of the low temperature transformation products in ultra low carbon interstitial free steels. With increasing the Mn content, yield and tensile strengths increased, but yield ratio decreased. The Mn was found to be effective to decrease the yield point elongation, causing continuous yielding in 3% Mn steel. Low temperature transformation ferrites such as quasi-polygonal ferrite, granular bainitic ferrite, and bainitic ferrite more easily formed with higher Mn content, higher annealing temperature, longer annealing time, and faster cooling rate. Polygonal ferrite grain was readily identified in the light microscope and was characterized by the polyhedral and equiaxed shape while quasi-polygonal ferrite showed the irregular changeful grain boundaries. It was found that both granular bainitic and bainitic ferrites revealed some etching evidence of substructures in the light microscope

  20. The effect of low temperature neutron irradiation and annealing on the thermal conductivity of advanced carbon-based materials

    International Nuclear Information System (INIS)

    Barabash, V.; Mazul, I.; Latypov, R.; Pokrovsky, A.; Wu, C.H.

    2002-01-01

    Several carbon-based materials (carbon fibre composites NB 31, NS 31 and UAM-92, doped graphite RGTi-91), were irradiated at about 90 deg. C in the damage dose range 0.0021-0.13 dpa. Significant reduction of the thermal conductivity of all materials was observed (e.g. at damage dose of ∼0.13 dpa the thermal conductivity degraded up to level of ∼2-3% of the initial values). However, saturation of this effect was observed starting at a dose of ∼0.06 dpa. The effect of annealing at 250 and 350 deg. C on the recovery of thermal conductivity of NB 31 and NS 31 was studied and it was shown this annealing can significantly improve thermal conductivity (∼2.5-3 times). The data on the degradation of the thermal conductivity after additional irradiation after annealing is also reported

  1. Effect of annealing on field emission properties of nanodiamond coating

    International Nuclear Information System (INIS)

    Zhai, C.X.; Yun, J.N.; Zhao, L.L.; Zhang, Z.Y.; Wang, X.W.; Chen, Y.Y.

    2011-01-01

    Field electron emission of detonation nanodiamond (ND) coated on a titanium substrate by electrophoretic deposition is investigated. It is found that thermal annealing can significantly improve the field emission properties of the ND layer, which can be mainly attributed to the formation of the TiC phase between diamond and Ti. The first-principles calculated results show that the formation of transition layers can lower the interface barrier and enhance the field electron emission of ND coating. Besides, the transformation of diamond to graphite after annealing has been revealed by Raman spectra. This transformation also benefits the electron emission enhancement.

  2. Effect of annealing on field emission properties of nanodiamond coating

    Energy Technology Data Exchange (ETDEWEB)

    Zhai, C.X., E-mail: zhaicatty@126.co [School of Information Science and Technology, Northwest University, Xi' an 710127, Shaanxi (China); Yun, J.N.; Zhao, L.L.; Zhang, Z.Y.; Wang, X.W.; Chen, Y.Y. [School of Information Science and Technology, Northwest University, Xi' an 710127, Shaanxi (China)

    2011-03-01

    Field electron emission of detonation nanodiamond (ND) coated on a titanium substrate by electrophoretic deposition is investigated. It is found that thermal annealing can significantly improve the field emission properties of the ND layer, which can be mainly attributed to the formation of the TiC phase between diamond and Ti. The first-principles calculated results show that the formation of transition layers can lower the interface barrier and enhance the field electron emission of ND coating. Besides, the transformation of diamond to graphite after annealing has been revealed by Raman spectra. This transformation also benefits the electron emission enhancement.

  3. Effect of annealing on refractive indices of radio-frequency magnetron sputtered waveguiding zinc oxide films on glass

    International Nuclear Information System (INIS)

    Mehan, Navina; Gupta, Vinay; Sreenivas, Kondepudy; Mansingh, Abhai

    2004-01-01

    The effects of annealing and gas composition on the refractive indices of zinc oxide films were studied in light of the structural properties. ZnO films (1 μm) were deposited by rf magnetron sputtering in different oxygen:argon mixtures on glass and annealed at 380 deg. C in air, at different times. Waveguide modes were excited in the films by prism coupling using a He-Ne laser. The estimated values of the extraordinary and ordinary refractive indices of the films, which were close to the corresponding bulk values (n e =2.006, n o =1.990), initially decreased with annealing time and later increased before becoming constant with further annealing. The variation in refractive indices was explained on the basis of contribution from both packing density p and lattice constant c of the films. The initial decrease in refractive indices was attributed to the observed lattice contraction, and the latter increase was explained in terms of the increase in packing density (p) of the films on annealing. A relation is proposed to estimate the refractive indices of films, which have the lattice constant c different from the bulk value

  4. High-Temperature-Short-Time Annealing Process for High-Performance Large-Area Perovskite Solar Cells.

    Science.gov (United States)

    Kim, Minjin; Kim, Gi-Hwan; Oh, Kyoung Suk; Jo, Yimhyun; Yoon, Hyun; Kim, Ka-Hyun; Lee, Heon; Kim, Jin Young; Kim, Dong Suk

    2017-06-27

    Organic-inorganic hybrid metal halide perovskite solar cells (PSCs) are attracting tremendous research interest due to their high solar-to-electric power conversion efficiency with a high possibility of cost-effective fabrication and certified power conversion efficiency now exceeding 22%. Although many effective methods for their application have been developed over the past decade, their practical transition to large-size devices has been restricted by difficulties in achieving high performance. Here we report on the development of a simple and cost-effective production method with high-temperature and short-time annealing processing to obtain uniform, smooth, and large-size grain domains of perovskite films over large areas. With high-temperature short-time annealing at 400 °C for 4 s, the perovskite film with an average domain size of 1 μm was obtained, which resulted in fast solvent evaporation. Solar cells fabricated using this processing technique had a maximum power conversion efficiency exceeding 20% over a 0.1 cm 2 active area and 18% over a 1 cm 2 active area. We believe our approach will enable the realization of highly efficient large-area PCSs for practical development with a very simple and short-time procedure. This simple method should lead the field toward the fabrication of uniform large-scale perovskite films, which are necessary for the production of high-efficiency solar cells that may also be applicable to several other material systems for more widespread practical deployment.

  5. Effect of annealing induced residual stress on the resonance frequency of SiO2 microcantilevers

    Science.gov (United States)

    Balasubramanian, S.; Prabakar, K.; Tripura Sundari, S.

    2018-04-01

    In the present work, effect of residual stress, induced due to annealing of SiO2 microcantilevers (MCs) on their resonance frequency is studied. SiO2MCs of various dimensions were fabricated using direct laser writer & wet chemical etching method and were annealed at 800 °C in oxygen environment, post release. The residual stress was estimated from the deflection profile of the MCs measured using 3D optical microscope, before and after annealing. Resonance frequency of the MCs was measured using nano-vibration analyzer and was found to change after annealing. Further the frequency shift was found to depend on the MC dimensions. This is attributed to the large stress gradients induced by annealing and associated stiffness changes.

  6. Effect of Intermediate Annealing on Microstructure and Property of 5182 Aluminum Alloy Sheet for Automobile

    Directory of Open Access Journals (Sweden)

    WANG Yu

    2016-09-01

    Full Text Available Effect of intermediate annealing on the microstructure and properties of 5182 aluminum alloy sheet with full annealed state (5182-O was investigated by means of optical microscope, scanning electron microscope and universal testing machine. The results indicate that compared with 5182-O sheet without intermediate annealing, 5182-O sheet with intermediate annealing possesses too fine grain size, intermetallic compounds not broken enough, larger size intermetallic particles, less dispersed phase. Yield strength and ultimate tensile strength, work hardening exponent and normal anisotropy of plastic strain ratio decrease but planner anisotropy of plastic strain ratio increases. The mechanical properties and forming ability of 5182-O aluminum alloy sheet and its microstructure are not improved significantly after intermediate annealing.

  7. Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

    International Nuclear Information System (INIS)

    Gayathri, A.G.; Joseph, C.M.

    2016-01-01

    Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10 9 and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

  8. Effect of annealing temperature on the stress and structural properties of Ge core fibre

    Science.gov (United States)

    Zhao, Ziwen; Cheng, Xueli; Xue, Fei; He, Ting; Wang, Tingyun

    2017-09-01

    Effect of annealing temperature on the stress and structural properties of a Ge core fibre via the molten core drawing (MCD) method is investigated using Raman spectroscopy, Scanning electronic microscopy (SEM), and X-ray diffraction. The experimental results showed that the Raman peak position of the Ge fibre shifted from 297.6 cm-1 to 300.5 cm-1, and the FWHM value decreased from 4.53 cm-1 to 4.31 cm-1, when the annealing is carried out at 700 °C, 800 °C, and 900 °C, respectively. For the Ge core annealed at 900 °C, an apparent crystal grain can be seen in the SEM image, and the diffraction peaks of the (3 3 1) plane are generated in the X-ray diffraction spectra. These results show that optimising the annealing temperature allows the release of the residual stress in the Ge core. When the Ge core fibre is annealed at 900 °C, it exhibits the lowest residual stress and the highest crystal quality, and the quality improvement relative to that of the sample annealed at 800 °C is significant. Hence, annealing at around 900 °C can greatly improve the quality of a Ge core fibre. Further performance improvement of the Ge core fibre by annealing techniques can be anticipated.

  9. Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

    Energy Technology Data Exchange (ETDEWEB)

    Gayathri, A.G., E-mail: gaythri305@yahoo.com; Joseph, C.M., E-mail: cmjoseph@rediffmail.com

    2016-09-15

    Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10{sup 9} and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

  10. Annealing Effect on Photovoltaic Performance of CdSe Quantum-Dots-Sensitized TiO2 Nanorod Solar Cells

    Directory of Open Access Journals (Sweden)

    Yitan Li

    2012-01-01

    Full Text Available Large area rutile TiO2 nanorod arrays were grown on F:SnO2 (FTO conductive glass using a hydrothermal method at low temperature. CdSe quantum dots (QDs were deposited onto single-crystalline TiO2 nanorod arrays by a chemical bath deposition (CBD method to make a photoelectrode. The solar cell was assembled using a CdSe-TiO2 nanostructure as the photoanode and polysulfide solution as the electrolyte. The annealing effect on optical and photovoltaic properties of CdSe quantum-dots-sensitized TiO2 nanorod solar cells was studied systematically. A significant change of the morphology and a regular red shift of band gap of CdSe nanoparticles were observed after annealing treatment. At the same time, an improved photovoltaic performance was obtained for quantum-dots-sensitized solar cell using the annealed CdSe-TiO2 nanostructure electrode. The power conversion efficiency improved from 0.59% to 1.45% as a consequence of the annealing effect. This improvement can be explained by considering the changes in the morphology, the crystalline quality, and the optical properties caused by annealing treatment.

  11. Buffer layer annealing effects on the magnetization reversal process in Pd/Co/Pd systems

    International Nuclear Information System (INIS)

    Fassatoui, A.; Belhi, R.; Vogel, J.; Abdelmoula, K.

    2016-01-01

    We have investigated the effect of annealing the buffer layer on the magnetization reversal behavior in Pd/Co/Pd thin films using magneto-optical Kerr microscopy. It was found that annealing the buffer layer at 150 °C for 1 h decreases the coercivity and increases the saturation magnetization and the effective magnetic anisotropy constant. This study also shows that the annealing induces a change of the magnetization reversal from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation. This result demonstrates that the main effect of annealing the buffer layer is to decrease the domain wall pinning in the Co layer, favoring the domain wall propagation mode. - Highlights: • The buffer layer surface morphology changes upon annealing of the buffer layer. • The coercivity decreases while the saturation magnetization and the effective anisotropy increase with the annealing of the buffer layer. • The reversal process changes from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation when annealing the buffer layer.

  12. Air atmosphere annealing effects on LSO:Ce crystal

    Czech Academy of Sciences Publication Activity Database

    Ding, D.; Feng, H.; Ren, G.; Nikl, Martin; Qin, L.; Pan, S.; Yang, F.

    2010-01-01

    Roč. 57, č. 3 (2010), s. 1272-1277 ISSN 0018-9499 R&D Projects: GA MŠk ME08034 Institutional research plan: CEZ:AV0Z10100521 Keywords : annealing * cerium * LSO * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.519, year: 2010

  13. Effect of annealing process of iron powder on magnetic properties ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. Iron powder magnetic cores are used as soft magnetic rotors, in micro special motors such as BS brake motors, refrigerator compressor motors and brushless servo motors. Heat treatment of iron powder played an important role in the magnetic properties and loss of the motor cores. After the annealing process,.

  14. Influence of annealing time and temperature on the Fe3Al intermetallic alloys microstructure modification

    Directory of Open Access Journals (Sweden)

    K. Garbala

    2011-04-01

    Full Text Available There is an industry interesting in intermetallic alloys in recent years. There are widely possibilities to adopt this kind of materials for structural units. More expensive materials can be replaced by them. A property which limits their wider application is the low plasticity at environment and elevated temperatures. In paper the results of the thermal microstructure modification are shown. To this end, the influence of annealing time and temperature on the intermetallic phase Fe3Al grain size was investigated. The impact of these factors on micro-hardness was examined as well. It was found that these operations cause the grain size reduction and the micro-hardness decrease.

  15. Effect of Annealing Temperature on Gas Sensing Performance of SnO2 Thin Films Prepared by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    G. E. PATIL

    2010-12-01

    Full Text Available The effect of variation of annealing temperature on the gas sensing characteristics of SnO2 thin films, which have been prepared by spray pyrolysis on alumina substrate at 350 oC, is investigated systematically for various gases at different operating temperature. The XRD, UV-visible spectroscopy and SEM techniques were employed to establish the structural, optical and morphological characteristics of the materials, resp. The X-ray diffraction results showed an increase in the crystallinity at higher annealing temperature. A high value of sensitivity is obtained for H2S gas at an optimum temperature of 100 oC is improved considerably. A SnO2 gas sensor annealed at 950 oC with sensitivity as high as 24 %, 4 times higher than that of sensor annealed at 550oC, are obtained for 80 ppm of H2S. The degree of crystallinity and grain size calculated from the XRD patterns has been found increasing with annealing temp

  16. Annealing temperature effect on self-assembled Au droplets on Si (111).

    Science.gov (United States)

    Sui, Mao; Li, Ming-Yu; Kim, Eun-Soo; Lee, Jihoon

    2013-12-13

    We investigate the effect of annealing temperature on self-assembled Au droplets on Si (111). The annealing temperature is systematically varied while fixing other growth parameters such as deposition amount and annealing duration clearly to observe the annealing temperature effect. Self-assembled Au droplets are fabricated by annealing from 50°C to 850°C with 2-nm Au deposition for 30 s. With increased annealing temperatures, Au droplets show gradually increased height and diameter while the density of droplets progressively decreases. Self-assembled Au droplets with fine uniformity can be fabricated between 550°C and 800°C. While Au droplets become much larger with increased deposition amount, the extended annealing duration only mildly affects droplet size and density. The results are systematically analyzed with cross-sectional line profiles, Fourier filter transform power spectra, height histogram, surface area ratio, and size and density plots. This study can provide an aid point for the fabrication of nanowires on Si (111).

  17. Dependence of high density nitrogen-vacancy center ensemble coherence on electron irradiation doses and annealing time

    Science.gov (United States)

    Zhang, C.; Yuan, H.; Zhang, N.; Xu, L. X.; Li, B.; Cheng, G. D.; Wang, Y.; Gui, Q.; Fang, J. C.

    2017-12-01

    Negatively charged nitrogen-vacancy (NV-) center ensembles in diamond have proved to have great potential for use in highly sensitive, small-package solid-state quantum sensors. One way to improve sensitivity is to produce a high-density NV- center ensemble on a large scale with a long coherence lifetime. In this work, the NV- center ensemble is prepared in type-Ib diamond using high energy electron irradiation and annealing, and the transverse relaxation time of the ensemble—T 2—was systematically investigated as a function of the irradiation electron dose and annealing time. Dynamical decoupling sequences were used to characterize T 2. To overcome the problem of low signal-to-noise ratio in T 2 measurement, a coupled strip lines waveguide was used to synchronously manipulate NV- centers along three directions to improve fluorescence signal contrast. Finally, NV- center ensembles with a high concentration of roughly 1015 mm-3 were manipulated within a ~10 µs coherence time. By applying a multi-coupled strip-lines waveguide to improve the effective volume of the diamond, a sub-femtotesla sensitivity for AC field magnetometry can be achieved. The long-coherence high-density large-scale NV- center ensemble in diamond means that types of room-temperature micro-sized solid-state quantum sensors with ultra-high sensitivity can be further developed in the near future.

  18. Annealing Effect on the Photoelectrochemical Properties of BiVO_4 Thin Film Electrodes

    International Nuclear Information System (INIS)

    Siti Nur Farhana Mohd Nasir; Mohd Asri Mat Teridi; Mehdi Ebadi; Sagu, J.S.

    2015-01-01

    Monoclinic bismuth vanadate (BiVO_4) thin film electrodes were fabricated on fluorine-doped tin oxide via aerosol-assisted chemical vapour deposition (AACVD). Annealing and without annealing effect of thin films were analysed by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), ultraviolet-visible spectrophotometry (UV-Vis) and current voltage measurement. All BiVO_4 thin films showed an anodic photocurrent. The sample of BiVO_4 annealed at 400 degree Celsius exhibited the highest photocurrent density of 0.44 mAcm"-"2 vs. Ag/ AgCl at 1.23 V. (author)

  19. Effect of cold working and annealing on stress corrosion cracking of AISI 304 stainless steel

    International Nuclear Information System (INIS)

    Yeon, Y.M.; Kwun, S.I.

    1983-01-01

    A study was made of the effects of cold working and annealing on the stress corrosion cracking of AISI 304 stainless steel in boiling 42% MgCl 2 solution. When the 60% or 76% of yield stress was applied, the resistance to SCC showed maximum at 30% of cold work. However, when the same load was applied to the annealed specimens after cold working, the resistance to SCC decreased abruptly at 675degC annealing. The fracture mode changed mode change mixed → intergranular → transgranular as the amount of cold work increased. (Author)

  20. Effect of oxidation and annealing temperature on optical and ...

    Indian Academy of Sciences (India)

    Administrator

    Tin oxide thin films were deposited on glass substrate with 100 nm thickness of Sn, which was coated by magnetron sputtering followed by thermal oxidation at different temperatures. ... Annealing of the samples at 500–650 °C caused the transmittance and optical ..... (αhν)1/2 and (αhν)1/3 to determine the Eg. (b) They used.

  1. Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

    International Nuclear Information System (INIS)

    Chai Xu-Zhao; Zhou Dong; Liu Bin; Xie Zi-Li; Han Ping; Xiu Xiang-Qian; Chen Peng; Lu Hai; Zhang Rong; Zheng You-Dou

    2015-01-01

    The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investigated by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence (YL) and blue luminescence (BL) bands dramatically decrease after annealing at 700°C. At the annealing temperature higher than 900°C, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen annealed GaN decreases at the temperature ranging from 900°C to 1000°C. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000°C. (paper)

  2. Toward the understanding of annealing effects on (GaIn)2O3 films

    International Nuclear Information System (INIS)

    Zhang, Fabi; Jan, Hideki; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Nagaoka, Takashi; Arita, Makoto; Guo, Qixin

    2015-01-01

    (GaIn) 2 O 3 films with nominal indium content of 0.3 deposited at room temperature by pulsed laser deposition have been annealed in different gas ambient (N 2 , vacuum, Ar, O 2 ) and temperatures (700–1000 °C) in order to understand the annealing effects. X-ray diffraction and X-ray rocking curve revealed that the film annealed at 800 °C under O 2 ambient has best crystallinity. X-ray photoelectron spectroscopy analysis indicated that oxygen ambient annealing has greatly helped on decreasing the oxygen vacancy. (GaIn) 2 O 3 films with different nominal indium content varying from 0.2 to 0.7 annealed at 800 °C under O 2 ambient also showed high crystal quality, improved optical transmittance, and smooth surface. - Highlights: • (GaIn) 2 O 3 films have been annealed in different gas ambient and temperature. • Only oxygen ambient can crystallize (GaIn) 2 O 3 film. • Film annealed at 800 °C appears best crystal quality. • High quality films were obtained with wide indium content varying from 0.2 to 0.7

  3. Annealing effects on electron-beam evaporated Al2O3 films

    International Nuclear Information System (INIS)

    Shang Shuzhen; Chen Lei; Hou Haihong; Yi Kui; Fan Zhengxiu; Shao Jianda

    2005-01-01

    The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2 O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 deg. C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 deg. C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given

  4. Annealing effects on electron-beam evaporated Al 2O 3 films

    Science.gov (United States)

    Shuzhen, Shang; Lei, Chen; Haihong, Hou; Kui, Yi; Zhengxiu, Fan; Jianda, Shao

    2005-04-01

    The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 °C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 °C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given.

  5. Annealing effects on magnetic properties of silicone-coated iron-based soft magnetic composites

    International Nuclear Information System (INIS)

    Wu Shen; Sun Aizhi; Zhai Fuqiang; Wang Jin; Zhang Qian; Xu Wenhuan; Logan, Philip; Volinsky, Alex A.

    2012-01-01

    This paper focuses on novel iron-based soft magnetic composites synthesis utilizing high thermal stability silicone resin to coat iron powder. The effect of an annealing treatment on the magnetic properties of synthesized magnets was investigated. The coated silicone insulating layer was characterized by scanning electron microscopy and energy dispersive X-ray spectroscopy. Silicone uniformly coated the powder surface, resulting in a reduction of the imaginary part of the permeability, thereby increasing the electrical resistivity and the operating frequency of the synthesized magnets. The annealing treatment increased the initial permeability, the maximum permeability, and the magnetic induction, and decreased the coercivity. Annealing at 580 °C increased the maximum permeability by 72.5%. The result of annealing at 580 °C shows that the ferromagnetic resonance frequency increased from 2 kHz for conventional epoxy resin coated samples to 80 kHz for the silicone resin insulated composites. - Highlights: ► Silicone uniformly coated the powder, increased the operating frequency of SMCs. ► The annealing treatment increased the DC properties of SMCs. ► Annealing at 580 °C increased the maximum permeability by 72.5%. ► Compared with epoxy coated, the SMCs had higher resistivity annealing at 580 °C.

  6. Effects of methane annealing ambience on the structure and photoluminescence of BCNO phosphors

    International Nuclear Information System (INIS)

    Lu, Fang; Zhang, Xinghua; Lu, Zunming; Tang, Chengchun

    2014-01-01

    Green-emitting BCNO phosphors are synthetized by low temperature liquid method. And then the properties of structure and photoluminescence of BCNO phosphors annealed under methane ambience at 500–700 °C for 4 h and at 600 °C for 3–6 h are researched. When the phosphor was annealed for the same time period, the crystallinity was improved first and then became poor as the annealing temperature increased. In addition, the emission peak shifted to high wavelength, and the maximum shift span reached up to 40 nm. When the phosphor was annealed at the same temperature, the crystallinity was improved and the emission peak was red-shifted. The multi-peaks fitting results indicated that three luminescence mechanisms which were C-related defect, B–O luminescence center and other defects or vacancies played important roles in BCNO phosphors. - Highlights: • When the annealing time period was fixed to 4 h, the XRD results showed the crystallinity was improved at first and then became poor as the annealing temperature increased. Furthermore, the PL results indicated the emission peak was red-shifted and then blue-shifted and the maximum shift span reached up to 40 nm when the annealing temperature was 600 °C. • With regard to the samples annealed at 600 °C for 3, 4, 5 and 6 h respectively, the crystallinity was improved as the annealing time period prolonged. In addition, the emission peak was red-shifted first and then blue-shifted and the maximum shift span reached up to 40 nm when the annealing time was 4 h. • What's more, the three-peaks fitting graphs uncovered that the luminescence properties were decided by three mechanisms which were C-related defect, B–O luminescence center and other defects or vacancies. Therefore, the peakshift and luminescence intensity were influenced by the comprehensive superposition of these three factors. • In this work, we found the inter luminescence mechanisms of BCNO phosphor by the annealing experiments under methane

  7. Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

    Science.gov (United States)

    Jones, C. E.; Johnson, E. S.; Compton, W. D.; Noonan, J. R.; Streetman, B. G.

    1973-01-01

    Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

  8. Effects of surface polishing and annealing on the optical conductivity of intermetallic compounds

    International Nuclear Information System (INIS)

    Rhee, Joo Yull

    1999-01-01

    The optical conductivity spectra of several intermetallic compounds were measured by spectroscopic ellipsometry. Three spectra were measured for each compound; just after the sample was mechanically polished, at high temperature, and after the sample was annealed at 110 .deg. C for at least one day and cooled to room temperature. An equiatomic FeTi alloy showed the typical effects of annealing after mechanical polishing of surface. The spectrum after annealing had a larger magnitude and sharper structures than the spectrum before annealing. We also observed shifts of peaks in the spectrum. A relatively low-temperature annealing gave rise to unexpectedly substantial effects, and the effects were explained by recrystallization and/or a disorder → order transition of the surface of the sample which was damaged and, hence, became highly disordered by mechanical polishing. Similar effects were also observed when the sample temperature was lowered. The observed changes upon annealing could partly be explained by presumption that the recrystallization would be realized in such a way that the average atomic spacing would be reduced

  9. Effect of annealing temperature on the mechanical properties of zircaloy-4 cladding

    International Nuclear Information System (INIS)

    Beauregard, R.J.; Clevinger, G.S.; Murty, K.L.

    1977-01-01

    The mechanical properties of zircaloy cladding materials are sensitive to those fabrication variables which have an effect on the preferred crystallographic orientation or texture of the finished tube. The effect of one such variable, the final annealing temperature, on various mechanical properties is examined using tube reduced zircaloy-4 fuel rod cladding annealed at temperatures from 905F to 1060F. This temperature range provides cladding with varying degrees of recrystallization including full recrystallization. Hoop creep characteristics of zircaloy cladding were studied as a function of the annealing temperature using closed-end internal pressurization tests at 750F and hoop stresses of 10, 15, 20 and 25 ksi. The critical annealing temperature at which a minimum creep strain occurs decreases as the applied stress increases. An additional test at 700F and 30 ksi hoop stress was conducted to demonstrate that the critical annealing temperature is essentially independent of the test temperature. Plausible explanations based on differing substructures developed in cold-worked stress-relieved material are forwarded. The effect of annealing temperature on the room temperature mechanical anisotropy parameters, R and P, was studied. R-parameters were determined from in situ transverse strain gage measurements in uniaxial tensile tests. P-parameters were calculated from uniaxial test data (R and yield stress) and hoop yield stress determined in biaxial, closed-end internal pressurization tests

  10. The annealing effects on irradiated SiC piezo resistive pressure sensor

    International Nuclear Information System (INIS)

    Almaz, E.; Blue, T. E.; Zhang, P.

    2009-01-01

    The effects of temperature on annealing of Silicon Carbide (SiC) piezo resistive pressure sensor which was broken after high fluence neutron irradiation, were investigated. Previously, SiC piezo resistive sensor irradiated with gamma ray and fast neutron in the Co-60 gamma-ray irradiator and Beam Port 1 (BP1) and Auxiliary Irradiation Facility (AIF) at the Ohio State University Nuclear Reactor Laboratory (OSUNRL) respectively. The Annealing temperatures were tested up to 400 C. The Pressure-Output voltage results showed recovery after annealing process on SiC piezo resistive pressure sensor. The bridge resistances of the SiC pressure sensor stayed at the same level up to 300 C. After 400 C annealing, the resistance values changed dramatically.

  11. Annealing effects on magnetic properties of silicone-coated iron-based soft magnetic composites

    Science.gov (United States)

    Wu, Shen; Sun, Aizhi; Zhai, Fuqiang; Wang, Jin; Zhang, Qian; Xu, Wenhuan; Logan, Philip; Volinsky, Alex A.

    2012-03-01

    This paper focuses on novel iron-based soft magnetic composites synthesis utilizing high thermal stability silicone resin to coat iron powder. The effect of an annealing treatment on the magnetic properties of synthesized magnets was investigated. The coated silicone insulating layer was characterized by scanning electron microscopy and energy dispersive X-ray spectroscopy. Silicone uniformly coated the powder surface, resulting in a reduction of the imaginary part of the permeability, thereby increasing the electrical resistivity and the operating frequency of the synthesized magnets. The annealing treatment increased the initial permeability, the maximum permeability, and the magnetic induction, and decreased the coercivity. Annealing at 580 °C increased the maximum permeability by 72.5%. The result of annealing at 580 °C shows that the ferromagnetic resonance frequency increased from 2 kHz for conventional epoxy resin coated samples to 80 kHz for the silicone resin insulated composites.

  12. Effects of Solution Annealing Temperature on the Galvanic Corrosion Behavior of the Super Duplex Stainless Steels

    Science.gov (United States)

    Lee, Jun-Seob; Jeon, Soon-Hyeok; Park, Yong-Soo

    2013-02-01

    This study investigated the active dissolution of super duplex stainless steel (SDSS) at various solution annealing temperatures. The active dissolutions of the α-phase and γ-phase were compared, and the effects of the surface area ratio on the active dissolutions of both phases were investigated. There were two peaks in the active-passive transition region in the potentiodynamic test in the modified green-death solution. The two peaks changed as the solution annealing temperature was increased from 1050 to 1150 °C. The solution annealing temperature difference affected the critical anodic current densities. This provides useful information for determining the appropriate solution annealing temperature in the modified green-death solution for SDSS.

  13. Simulated annealing (SA to vehicle routing problems with soft time windows

    Directory of Open Access Journals (Sweden)

    Suphan Sodsoon

    2014-12-01

    Full Text Available The researcher has applied and develops the meta-heuristics method to solve Vehicle Routing Problems with Soft Time Windows (VRPSTW. For this case there was only one depot, multi customers which each generally sparse either or demand was different though perceived number of demand and specific period of time to receive them. The Operation Research was representative combinatorial optimization problems and is known to be NP-hard. In this research algorithm, use Simulated Annealing (SA to determine the optimum solutions which rapidly time solving. After developed the algorithms, apply them to examine the factors and the optimum extended time windows and test these factors with vehicle problem routing under specific time windows by Solomon in OR-Library in case of maximum 25 customers. Meanwhile, 6 problems are including of C101, C102, R101, R102, RC101 and RC102 respectively. The result shows the optimum extended time windows at level of 50%. At last, after comparison these answers with the case of vehicle problem routing under specific time windows and flexible time windows, found that percentage errors on number of vehicles approximately by -28.57% and percentage errors on distances approximately by -28.57% which this algorithm spent average processing time on 45.5 sec/problems.

  14. Effect of the annealing environment on the optical properties of ZnO/GaAs grown by MOCVD

    International Nuclear Information System (INIS)

    Dangbegnon, J.K.; Talla, K.; Botha, J.R.

    2011-01-01

    The optical properties of ZnO grown on (1 0 0) GaAs substrate using metalorganic chemical vapor deposition are investigated by photoluminescence (PL) spectroscopy. Postgrowth annealing in nitrogen and oxygen was performed for different times and temperatures in order to incorporate As from the substrate into the ZnO thin films. The PL spectra of the samples annealed in different ambients reveal that the effect of As diffusion into the ZnO thin films is more pronounced when the annealing is performed in oxygen at 550 o C. The 11 K PL spectra show the appearance of a transition at ∼3.35 eV after annealing in oxygen at 550 deg. C for 1 h. A further increase in the annealing temperature leads to the disappearance of this line, while for annealing times longer than 2 h at 550 o C, it is no longer prominent. The increase in intensity of this new transition is also accompanied by the enhancement of radiative centers related to structural defects, such as the stacking fault-related transition at 3.31 eV and the Y-line. Temperature dependent PL illustrates the excitonic nature of the new transition at ∼3.35 eV, which is therefore assigned to (A 0 , X) transition, where the acceptor is possibly the 2V Zn -As Zn complex, with an activation energy E A in the range of 160-240 meV. Furthermore, the enhancement of the radiative centers related to structural defects is regarded as evidence that As atoms tend to segregate in the vicinity of structural defects to relieve local strain. - Highlights: → (A 0 , X) and DAP transitions at 3.35 and 3.26 eV related to arsenic acceptor. → Oxygen annealing ambient promotes arsenic acceptor into ZnO films. → Increase in structural defect lines is related to arsenic incorporation. → Annealing at optimal temperature of around 550 deg. C is necessary for arsenic incorporation.

  15. Effects of optical interference and annealing on the performance of poly (3-hexylthiophene): fullerene based solar cells

    International Nuclear Information System (INIS)

    Hai-Long, You; Chun-Fu, Zhang

    2009-01-01

    In this paper, the effects of optical interference and annealing on the performance of P3HT:PCBM based organic solar cells are studied in detail. Due to the optical interference effect, short circuit current density (J SC ) shows obvious oscillatory behaviour with the variation of active layer thickness. With the help of the simulated results, the devices are optimized around the first two optical interference peaks. It is found that the optimized thicknesses are 80 and 208 nm. The study on the effect of annealing on the performance indicates that post-annealing is more favourable than pre-annealing. Based on post-annealing, different annealing temperatures are tested. The optimized annealing condition is 160° C for 10 min in a nitrogen atmosphere. The device shows that the open circuit voltage V OC achieves about 0.65V and the power conversion efficiency is as high as 4.0 % around the second interference peak

  16. Simulated annealing with constant thermodynamic speed

    International Nuclear Information System (INIS)

    Salamon, P.; Ruppeiner, G.; Liao, L.; Pedersen, J.

    1987-01-01

    Arguments are presented to the effect that the optimal annealing schedule for simulated annealing proceeds with constant thermodynamic speed, i.e., with dT/dt = -(v T)/(ε-√C), where T is the temperature, ε- is the relaxation time, C ist the heat capacity, t is the time, and v is the thermodynamic speed. Experimental results consistent with this conjecture are presented from simulated annealing on graph partitioning problems. (orig.)

  17. Annealing behavior and shape memory effect in NiTi alloy processed by equal-channel angular pressing at room temperature

    International Nuclear Information System (INIS)

    Shahmir, Hamed; Nili-Ahmadabadi, Mahmoud; Wang, Chuan Ting; Jung, Jai Myun; Kim, Hyoung Seop; Langdon, Terence G.

    2015-01-01

    A martensitic NiTi shape memory alloy was processed successfully by equal-channel angular pressing (ECAP) for one pass at room temperature using a core–sheath billet design. The annealing behavior and shape memory effect of the ECAP specimens were studied followed by post-deformation annealing (PDA) at 673 K for various times. The recrystallization and structural evolution during annealing were investigated by differential scanning calorimetry, dilatometry, X-ray diffraction, transmission electron microscopy and microhardness measurements. The results indicate that the shape memory effect improves by PDA after ECAP processing. Annealing for 10 min gives a good shape memory effect which leads to a maximum in recoverable strain of 6.9 pct upon heating where this is more than a 25 pct improvement compared with the initial state

  18. Annealing effects of ZnO nanorods on dye-sensitized solar cell efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Jooyoung; Lee, Juneyoung [Department of Chemical and Biomolecular Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749 (Korea, Republic of); Lim, Sangwoo, E-mail: swlim@yonsei.ac.k [Department of Chemical and Biomolecular Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-gu, Seoul 120-749 (Korea, Republic of)

    2010-06-01

    Dye-sensitized solar cells (DSSCs) were fabricated using ZnO nanorod arrays vertically grown on fluorine-doped tin oxide (FTO) glass using a low-temperature hydrothermal method. When the ZnO seed layer was annealed, greater DSSC efficiency was obtained. This may be attributed to the improvement of adhesion between the FTO and the seed layer and the corresponding effective growth of the ZnO nanorods. The DSSCs fabricated using ZnO nanorods which underwent annealing were more efficient than those that did not undergo annealing. The ZnO nanorods which were annealed in N{sub 2}/H{sub 2} or O{sub 2} had increased dye loadings due to higher OH concentrations on the hydrophilic surface, which contributed to the improved DSSC efficiency. The fill factor increased after the annealing of the ZnO nanorods, potentially due to the improved crystallinity of the ZnO nanorods. In this study, annealing of both the seed layer and the ZnO nanorods resulted in the greatest DSSC efficiency.

  19. Evolution of microstructural defects with strain effects in germanium nanocrystals synthesized at different annealing temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Minghuan; Cai, Rongsheng; Zhang, Yujuan; Wang, Chao [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Chemistry and Chemical Engineering, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Wang, Yiqian, E-mail: yqwang@qdu.edu.cn [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Ross, Guy G.; Barba, David [INRS-EMT, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

    2014-07-01

    Ge nanocrystals (Ge-ncs) were produced by implantation of {sup 74}Ge{sup +} into a SiO{sub 2} film on (100) Si, followed by high-temperature annealing from 700 °C to 1100 °C. Transmission electron microscopy (TEM) studies show that the average size of Ge-ncs increases with the annealing temperature. High-resolution TEM (HRTEM) investigations reveal the presence of planar and linear defects in the formed Ge-ncs, whose relative concentrations are determined at each annealing temperature. The relative concentration of planar defects is almost independent of the annealing temperature up to 1000 °C. However, from 1000 °C to 1100 °C, its concentration decreases dramatically. For the linear defects, their concentration varies considerably with the annealing temperatures. In addition, by measuring the interplanar spacing of Ge-ncs from the HRTEM images, a strong correlation is found between the dislocation percentage and the stress field intensity. Our results provide fundamental insights regarding both the presence of microstructural defects and the origin of the residual stress field within Ge-ncs, which can shed light on the fabrication of Ge-ncs with quantified crystallinity and appropriate size for the advanced Ge-nc devices. - Highlights: • Growth of Ge nanocrystals at different annealing temperatures was investigated. • Strain field has great effects on the formation of dislocations. • Different mechanisms are proposed to explain growth regimes of Ge nanocrystals.

  20. Quantitative Identification of the Annealing Degree of Apatite Fission Tracks Using Terahertz Time Domain Spectroscopy (THz-TDS).

    Science.gov (United States)

    Wu, Hang; Wu, Shixiang; Qiu, Nansheng; Chang, Jian; Bao, Rima; Zhang, Xin; Liu, Nian; Liu, Shuai

    2018-01-01

    Apatite fission-track (AFT) analysis, a widely used low-temperature thermochronology method, can provide details of the hydrocarbon generation history of source rocks for use in hydrocarbon exploration. The AFT method is based on the annealing behavior of fission tracks generated by 238 U fission in apatite particles during geological history. Due to the cumbersome experimental steps and high expense, it is imperative to find an efficient and inexpensive technique to determinate the annealing degree of AFT. In this study, on the basis of the ellipsoid configuration of tracks, the track volume fraction model (TVFM) is established and the fission-track volume index is proposed. Furthermore, terahertz time domain spectroscopy (THz-TDS) is used for the first time to identify the variation of the AFT annealing degree of Durango apatite particles heated at 20, 275, 300, 325, 450, and 500 ℃ for 10 h. The THz absorbance of the sample increases with the degree of annealing. In addition, the THz absorption index is exponentially related to annealing temperature and can be used to characterize the fission-track volume index. Terahertz time domain spectroscopy can be an ancillary technique for AFT thermochronological research. More work is urgently needed to extrapolate experimental data to geological conditions.

  1. Investigation of the evolution of nitrogen defects in flash-lamp-annealed InGaZnO films and their effects on transistor characteristics

    Science.gov (United States)

    Eom, Tae-Yil; Ahn, Chee-Hong; Kang, Jun-Gu; Saad Salman, Muhammad; Lee, Sun-Young; Kim, Yong-Hoon; Lee, Hoo-Jeong; Kang, Chan-Mo; Kang, Chiwon

    2018-06-01

    In this study, we show the evolution of nitrogen defects during a sol–gel reaction in flash-lamp-annealed InGaZnO (IGZO) films and their effects on the device characteristics of their thin-film transistors (TFTs). The flash lamp annealing (FLA) of the IGZO TFT for 16 s helps achieve a mobility of approximately 7 cm2 V‑1 s‑1. However, further extension of the annealing time results only in drastic increases in carrier concentration and off-current. The X-ray photoelectron spectroscopy (XPS) analysis of the N 1s peak unravels the presence of oxygen-vacancy-associated nitrogen defects and their evolution with annealing time, which is possibly responsible for the increase in carrier concentration.

  2. Effect of thermal annealing of lead oxide film

    International Nuclear Information System (INIS)

    Hwang, Oh Hyeon; Kim, Sang Su; Suh, Jong Hee; Cho, Shin Hang; Kim, Ki Hyun; Hong, Jin Ki; Kim, Sun Ung

    2011-01-01

    Oxygen partial pressure in a growth process of lead oxide determines chemical and physical properties as well as crystalline structure. In order to supply oxygen, two ring-shape suppliers have been installed in a growth chamber. Films have been deposited using vacuum thermal evaporation from a raw material of yellow lead oxide powder (5N). Growth rate is controlled to be about 400 A/s, and film thickness more than 50 μm has been achieved. After deposition, the film is annealed at various temperatures under an oxygen atmosphere. In this study, an optimum growth condition for a good X-ray detector has been achieved by fine control of oxygen flow-rate and by thermal treatment. An electrical resistivity of 4.5x10 12 Ω cm is measured, and is comparable with the best data of PbO.

  3. Effects of recrystallization annealing on mechanical properties of cold-rolled PdNi5 wires

    Directory of Open Access Journals (Sweden)

    Aleksandra Ivanović

    2016-03-01

    Full Text Available The aim of this investigation was to determine the influence of the recrystallization temperature and recrystallization time on the microstructure and mechanical properties of the PdNi5 alloy subjected to cold deformation in the process of rolling at a constant deformation degree. The samples of PdNi5 alloy were recrystallization annealed within the temperature range of 200-1000ºC and annealing time range of 20-45 min after cold rolling with deformation degree of 97%. The tensile test was carried out using universal material testing machine. The hardness was also measured on the combined device for measuring Vickers and Brinell hardness. Metallographic observations were performed on an optical microscope. The analysis of the results of investigations regarding the microstructural changes and corresponding mechanical properties of cold-rolled PdNi5 strips shows that annealing temperature of 500ºC was sufficient to activate the energy for various recrystallization processes causing a change in the mechanical properties of cold-rolled PdNi5 strips. The annealing time, at constant annealing temperature, almost did not affect a recrystallization temperature and the mechanical properties of the cold-rolled PdNi5 strips.

  4. Effects of annealing on the recombination dynamics of low-temperature grown ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Hilker, B.; Bekeny, C.; Voss, T.; Gutowski, J. [IFP, Universitaet Bremen, 28334 Bremen (Germany); Hauschild, R.; Kalt, H. [Universitaet Karlsruhe, 76128 Karlsruhe (Germany); Postels, B.; Bakin, Andrey; Waag, A. [IHT, TU Braunschweig, 38023 Braunschweig (Germany)

    2007-07-01

    We present systematic temperature and excitation density dependent time-resolved photoluminescence (TRPL) measurements of as-grown and annealed ZnO nanorods fabricated by an aqueous chemical growth (ACG) technique at {proportional_to}90 C. The as-grown nanorods show strong nearband-edge and rather weak deep-level emission indicating their already good optical quality. At 4K, we find a broad emission line at 3.36 eV (line width 30 meV) which we attribute to recombination from a donor band formed through the high donor concentration. After annealing in oxygen and nitrogen atmospheres at 600-800 C well-resolved and sharper excitonic transitions are observed. To understand the recombination dynamics in the nanorods we carried out TRPL measurements using a frequency-doubled femtosecond laser and a streak camera. The as-grown sample shows a very fast monoexponential decay time of {proportional_to}10ps independent of temperature and excitation density. In contrast, the annealed samples exhibit a biexponential decay. Each a fast {tau}1 and a slow {tau}2 time constant have been determined for all annealed samples both of them significantly varying depending on the annealing atmosphere and temperature. This will be discussed on the basis of a phenomenological rate-equation model.

  5. Effects of annealing schedule on orientation of Bi3.2Nd0.8Ti3O12 ferroelectric film prepared by chemical solution deposition process

    International Nuclear Information System (INIS)

    He, H.Y.; Huang, J.F.; Cao, L.Y.; Wang, L.S.

    2006-01-01

    Fatigue-free Bi 3.2 Nd 0.8 Ti 3 O 12 ferroelectric thin films were successfully prepared on p-Si(1 1 1) substrate using chemical solution deposition process. The orientation and formation of thin film under different annealing schedules were studied. XRD analysis indicated that (2 0 0)-oriented films with degree of orientation of I (200) /I (117) = 2.097 and 0.466 were obtained by preannealing for 10 min at 400 deg. C followed by rapid thermal annealing for 3, 10 and 20 min at 700 deg. C, respectively (0 0 8)-oriented films with degree of orientation of I (008) /I (117) = 1.706 were obtained by rapid thermal annealing for 3 min at 700 deg. C without preannealing, and (0 0 8)-oriented films with degree of orientation of I (008) /I (117) = 0.719 were obtained by preheating the film from room temperature at 20 deg. C/min followed by annealing for 10 min at 700 deg. C. The a-axis and c-axis orientation decreased as increase of annealing time due to effects of (1 1 1)-oriented substrate. AFM analysis further indicated that preannealing at 400 deg. C for 10 min followed by rapid thermal annealing for 3 min at 700 deg. C resulted in formation of platelike crystallite parallel to substrate surface, however rapid thermal annealing for 3 min at 700 deg. C without preannealing resulted in columnar crystallite perpendicular to substrate surface

  6. Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

    International Nuclear Information System (INIS)

    Lin, Yow-Jon; Lin, Jian-Huang

    2014-01-01

    Highlights: • The current–voltage characteristics of graphene/n-type Si devices were measured. • The ideality factor increases with the decrease measurement temperatures. • Such behavior is attributed to Schottky barrier inhomogeneities. • Both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing. • Stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers. - Abstract: The current–voltage characteristics of graphene/n-type Si (n-Si) Schottky diodes with and without annealing were measured in the temperature range of −120 to 30 °C and analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decrease measurement temperatures. Such behavior is attributed to Schottky barrier inhomogeneities. It is shown that both the barrier height and the ideality factor can be tuned by changing the annealing temperature. Through the analysis, it can be suspected that a SiO x layer at the graphene/n-Si interfaces influences the electronic conduction through the device and stoichiometry of SiO x is affected by annealing treatment. In addition, both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing treatment, implying that stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers of graphene/n-Si Schottky diodes

  7. Effect of stress relief annealing temperature and atmosphere on the magnetic properties of silicon steel

    International Nuclear Information System (INIS)

    Paolinelli, Sebastiao C.; Cunha, Marco A. da

    2006-01-01

    Fully processed non-oriented silicon steel samples 0.50 mm thick were sheared and submitted to stress relief annealing under different conditions of temperature and atmosphere to investigate the effect of this treatment on the recovery of magnetic properties. Two different compositions were used, with different Si and Al contents. Temperature was varied in the range of 600-900 deg. C and four atmospheres were used: N 2 and N 2 +10%H 2 combined with dew points of -10 and 15 deg. C. The results showed that annealing atmosphere has very important effect on the magnetic properties and that the beneficial effect of stress relief annealing can be overcome by the detrimental effect of the atmosphere under certain conditions, due to oxidation and nitration

  8. Annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films

    Energy Technology Data Exchange (ETDEWEB)

    Alves, M. J. P.; Gonzalez-Chavez, D. E.; Sommer, R. L. [Centro Brasileiro de Pesquisas Físicas, Rua Dr. Xavier Sigaud 150, Urca, 22290-180 Rio de Janeiro, RJ (Brazil); Bohn, F. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil)

    2015-03-28

    We systematically investigate the annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films with thickness of 100 nm. We correlate the non-uniform residual stress obtained from grazing incidence x-ray diffraction measurements with the ferromagnetic resonance (FMR) linewidth due to effective field inhomogeneities measured from broadband ferromagnetic resonance absorption measurements. We also estimate the annealing temperature effect on the Gilbert and two-magnon scattering contributions to the total ferromagnetic resonance FMR linewidth. We show that the effective field inhomogeneities constitute the main contribution to the microwave linewidth, while this contribution is related to the non-uniform residual stress in the films which is reduced by thermal annealing.

  9. Effect of annealing on the mechanical and scratch properties of BCN films obtained by magnetron sputtering deposition

    International Nuclear Information System (INIS)

    Xu, Shuyan; Ma, Xinxin; Wen, Huiying; Tang, Guangze; Li, Chunwei

    2014-01-01

    Highlights: • The amorphous BCN films were annealed at different temperatures under vacuum condition. • The order degree increases with the annealing temperature increasing, and the films do not decompose even the annealing temperature rise to 1000 °C. • The nano-hardness and modulus of the films decrease with the increasing of annealing temperatures. • The critical load of BCN films is not affected by the annealing temperature, and the films have good interfacial adhesion. • The scratch resistance properties of BCN film are improved by annealing at 600 °C. - Abstract: Boron-carbon-nitride (BCN) films have been fabricated by direct current unbalanced magnetron sputtering. Boron carbide/graphite compound and a mixture of nitrogen and argon are used as target and carrier gas, respectively, during BCN synthesis. The obtained BCN films are annealed at different temperatures under vacuum condition. The effect of annealing temperature on the structure, mechanical properties and scratch behavior of the BCN films has been investigated. The results indicate that no decomposition products are found even the BCN films are annealed at 1000 °C. The hardness and elastic modulus of the films decrease with the increase of annealing temperatures. The BCN film annealed at 600 °C has the strongest scratch resistance. The friction coefficient of all BCN films is in range of 0.05 to 0.15

  10. Effect of annealing on the mechanical and scratch properties of BCN films obtained by magnetron sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Shuyan, E-mail: xsynefu@126.com [Key Laboratory of Forest Sustainable Management and Environmental Microorganism Engineering of Heilongjiang Province, Northeast Forestry University, Harbin 150040 (China); Ma, Xinxin [School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wen, Huiying [Key Laboratory of Forest Sustainable Management and Environmental Microorganism Engineering of Heilongjiang Province, Northeast Forestry University, Harbin 150040 (China); Tang, Guangze [School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Li, Chunwei [Key Laboratory of Forest Sustainable Management and Environmental Microorganism Engineering of Heilongjiang Province, Northeast Forestry University, Harbin 150040 (China)

    2014-09-15

    Highlights: • The amorphous BCN films were annealed at different temperatures under vacuum condition. • The order degree increases with the annealing temperature increasing, and the films do not decompose even the annealing temperature rise to 1000 °C. • The nano-hardness and modulus of the films decrease with the increasing of annealing temperatures. • The critical load of BCN films is not affected by the annealing temperature, and the films have good interfacial adhesion. • The scratch resistance properties of BCN film are improved by annealing at 600 °C. - Abstract: Boron-carbon-nitride (BCN) films have been fabricated by direct current unbalanced magnetron sputtering. Boron carbide/graphite compound and a mixture of nitrogen and argon are used as target and carrier gas, respectively, during BCN synthesis. The obtained BCN films are annealed at different temperatures under vacuum condition. The effect of annealing temperature on the structure, mechanical properties and scratch behavior of the BCN films has been investigated. The results indicate that no decomposition products are found even the BCN films are annealed at 1000 °C. The hardness and elastic modulus of the films decrease with the increase of annealing temperatures. The BCN film annealed at 600 °C has the strongest scratch resistance. The friction coefficient of all BCN films is in range of 0.05 to 0.15.

  11. Rapid thermal pulse annealing

    International Nuclear Information System (INIS)

    Miller, M.G.; Koehn, B.W.; Chaplin, R.L.

    1976-01-01

    Characteristics of recovery processes have been investigated for cases of heating a sample to successively higher temperatures by means of isochronal annealing or by using a rapid pulse annealing. A recovery spectra shows the same features independent of which annealing procedure is used. In order to determine which technique provides the best resolution, a study was made of how two independent first-order processes are separated for different heating rates and time increments of the annealing pulses. It is shown that the pulse anneal method offers definite advantages over isochronal annealing when annealing for short time increments. Experimental data by means of the pulse anneal techniques are given for the various substages of stage I of aluminium. (author)

  12. High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayers

    International Nuclear Information System (INIS)

    Bhatt, Pramod; Ganeshan, V.; Reddy, V.R.; Chaudhari, S.M.

    2006-01-01

    High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayer (ML) up to 600 deg. C have been studied and reported in this paper. Ti/Ni multilayer samples having constant layer thicknesses of 50 A each are deposited on float glass and Si(1 1 1) substrates using electron-beam evaporation technique under ultra-high vacuum (UHV) conditions at room temperatures. The micro-structural parameters and their evolution with temperature for as-deposited as well as annealed multilayer samples up to 600 deg. C in a step of 100 deg. C for 1 h are determined by using X-ray diffraction (XRD) and grazing incidence X-ray reflectivity techniques. The X-ray diffraction pattern recorded at 300 deg. C annealed multilayer sample shows interesting structural transformation (from crystalline to amorphous) because of the solid-state reaction (SSR) and subsequent re-crystallization at higher temperatures of annealing, particularly at ≥400 deg. C due to the formation of TiNi 3 and Ti 2 Ni alloy phases. Sample quality and surface morphology are examined by using atomic force microscopy (AFM) technique for both as-deposited as well as annealed multilayer samples. In addition to this, a temperature dependent dc resistivity measurement is also used to study the structural transformation and subsequent alloy phase formation due to annealing treatment. The corresponding magnetization behavior of multilayer samples after each stage of annealing has been investigated by using Magneto-Optical Kerr Effect (MOKE) technique and results are interpreted in terms of observed micro-structural changes

  13. Effects of solvent evaporation conditions on solvent vapor annealed cylinder-forming block polymer thin films

    Science.gov (United States)

    Grant, Meagan; Jakubowski, William; Nelson, Gunnar; Drapes, Chloe; Baruth, A.

    Solvent vapor annealing is a less time and energy intensive method compared to thermal annealing, to direct the self-assembly of block polymer thin films. Periodic nanostructures have applications in ultrafiltration, magnetic arrays, or other structures with nanometer dimensions, driving its continued interest. Our goal is to create thin films with hexagonally packed, perpendicular aligned cylinders of poly(lactide) in a poly(styrene) matrix that span the thickness of the film with low anneal times and low defect densities, all with high reproducibility, where the latter is paramount. Through the use of our computer-controlled, pneumatically-actuated, purpose-built solvent vapor annealing chamber, we have the ability to monitor and control vapor pressure, solvent concentration within the film, and solvent evaporation rate with unprecedented precision and reliability. Focusing on evaporation, we report on two previously unexplored areas, chamber pressure during solvent evaporation and the flow rate of purging gas aiding the evaporation. We will report our exhaustive results following atomic force microscopy analysis of films exposed to a wide range of pressures and flow rates. Reliably achieving well-ordered films, while occurring within a large section of this parameter space, was correlated with high-flow evaporation rates and low chamber pressures. These results have significant implications on other methods of solvent annealing, including ``jar'' techniques.

  14. Effect of In Situ Annealing Treatment on the Mobility and Morphology of TIPS-Pentacene-Based Organic Field-Effect Transistors

    Science.gov (United States)

    Yang, Fuqiang; Wang, Xiaolin; Fan, Huidong; Tang, Ying; Yang, Jianjun; Yu, Junsheng

    2017-08-01

    In this work, organic field-effect transistors (OFETs) with a bottom gate top contact structure were fabricated by using a spray-coating method, and the influence of in situ annealing treatment on the OFET performance was investigated. Compared to the conventional post-annealing method, the field-effect mobility of OFET with 60 °C in situ annealing treatment was enhanced nearly four times from 0.056 to 0.191 cm2/Vs. The surface morphologies and the crystallization of TIPS-pentacene films were characterized by optical microscope, atomic force microscope, and X-ray diffraction. We found that the increased mobility was mainly attributed to the improved crystallization and highly ordered TIPS-pentacene molecules.

  15. NEXAFS Study of the Annealing Effect on the Local Structure of FIB-CVD DLC

    International Nuclear Information System (INIS)

    Saikubo, Akihiko; Kato, Yuri; Igaki, Jun-ya; Kanda, Kazuhiro; Matsui, Shinji; Kometani, Reo

    2007-01-01

    Annealing effect on the local structure of diamond like carbon (DLC) formed by focused ion beam-chemical vapor deposition (FIB-CVD) was investigated by the measurement of near edge x-ray absorption fine structure (NEXAFS) and energy dispersive x-ray (EDX) spectra. Carbon K edge absorption NEXAFS spectrum of FIB-CVD DLC was measured in the energy range of 275-320 eV. In order to obtain the information on the location of the gallium in the depth direction, incidence angle dependence of NEXAFS spectrum was measured in the incident angle range from 0 deg. to 60 deg. . The peak intensity corresponding to the resonance transition of 1s→σ* originating from carbon-gallium increased from the FIB-CVD DLC annealed at 200 deg. C to the FIB-CVD DLC annealed at 400 deg. C and decreased from that at 400 deg. C to that at 600 deg. C. Especially, the intensity of this peak remarkably enhanced in the NEXAFS spectrum of the FIB-CVD DLC annealed at 400 deg. C at the incident angle of 60 deg. . On the contrary, the peak intensity corresponding to the resonance transition of 1s→π* originating from carbon double bonding of emission spectrum decreased from the FIB-CVD DLC annealed at 200 deg. C to that at 400 deg. C and increased from that at 400 deg. C to that at 600 deg. C. Gallium concentration in the FIB-CVD DLC decreased from ≅2.2% of the as-deposited FIB-CVD DLC to ≅1.5% of the FIB-CVD DLC annealed at 600 deg. C from the elementary analysis using EDX. Both experimental results indicated that gallium atom departed from FIB-CVD DLC by annealing at the temperature of 600 deg. C

  16. Annealing of Co-Cr dental alloy: effects on nanostructure and Rockwell hardness.

    Science.gov (United States)

    Ayyıldız, Simel; Soylu, Elif Hilal; Ide, Semra; Kılıç, Selim; Sipahi, Cumhur; Pişkin, Bulent; Gökçe, Hasan Suat

    2013-11-01

    The aim of the study was to evaluate the effect of annealing on the nanostructure and hardness of Co-Cr metal ceramic samples that were fabricated with a direct metal laser sintering (DMLS) technique. Five groups of Co-Cr dental alloy samples were manufactured in a rectangular form measuring 4 × 2 × 2 mm. Samples fabricated by a conventional casting technique (Group I) and prefabricated milling blanks (Group II) were examined as conventional technique groups. The DMLS samples were randomly divided into three groups as not annealed (Group III), annealed in argon atmosphere (Group IV), or annealed in oxygen atmosphere (Group V). The nanostructure was examined with the small-angle X-ray scattering method. The Rockwell hardness test was used to measure the hardness changes in each group, and the means and standard deviations were statistically analyzed by one-way ANOVA for comparison of continuous variables and Tukey's HSD test was used for post hoc analysis. P values of directly affected both the nanostructure and hardness of the Co-Cr alloy. Group III exhibited a non-homogeneous structure and increased hardness (48.16 ± 3.02 HRC) because the annealing process was incomplete and the inner stress was not relieved. Annealing in argon atmosphere of Group IV not only relieved the inner stresses but also decreased the hardness (27.40 ± 3.98 HRC). The results of fitting function presented that Group IV was the most homogeneous product as the minimum bilayer thickness was measured (7.11 Å). After the manufacturing with DMLS technique, annealing in argon atmosphere is an essential process for Co-Cr metal ceramic substructures. The dentists should be familiar with the materials that are used in clinic for prosthodontics treatments.

  17. Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

    International Nuclear Information System (INIS)

    Wang Yan-Rong; Yang Hong; Xu Hao; Wang Xiao-Lei; Luo Wei-Chun; Qi Lu-Wei; Zhang Shu-Xiang; Wang Wen-Wu; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2015-01-01

    A multi-deposition multi-annealing technique (MDMA) is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device’s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown (TDDB) characteristics of positive channel metal oxide semiconductor (PMOS) under different MDMA process conditions, including the deposition/annealing (D and A) cycles, the D and A time, and the total annealing time. The results show that the increases of the number of D and A cycles (from 1 to 2) and D and A time (from 15 s to 30 s) can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail (TTF) at 63.2% increases by about several times. However, too many D and A cycles (such as 4 cycles) make the equivalent oxide thickness (EOT) increase by about 1 Å and the TTF of PMOS worsen. Moreover, different D and A times and numbers of D and A cycles induce different breakdown mechanisms. (paper)

  18. Raman Spectroscopy Study of Annealing-Induced Effects on Graphene Prepared by Micromechanical Exfoliation

    International Nuclear Information System (INIS)

    Song, Ji Eun; Ko, Taeg Yeoung; Ryu, Sun Min

    2010-01-01

    Raman spectroscopy was combined with AFM to investigate the effects of thermal annealing on the graphene samples prepared by the widely used micromechanical exfoliation method. Following annealing cycles, adhesive residues were shown to contaminate graphene sheets with thin molecular layers in their close vicinity causing several new intense Raman bands. Detailed investigation shows that the Raman scattering is very strong and may be enhanced by the interaction with graphene. Although the current study does not pinpoint detailed origins for the new Raman bands, the presented results stress that graphene prepared by the above method may require extra cautions when treated with heat or possibly solvents. Since its isolation from graphite, graphene has drawn a lot of experimental and theoretical research. These efforts have been mostly in pursuit of various applications such as electronics, sensors, stretchable transparent electrodes, and various composite materials. To accomplish such graphene-based applications, understanding chemical interactions of this new material with environments during various processing treatments will become more important. Since thermal annealing is widely used in various research of graphene for varying purposes such as cleaning, nanostructuring, reactions, etc., understanding annealing-induced effects is prerequisite to many fundamental studies of graphene. In this regard, it is to be noted that there has been a controversy on the cause of the annealing-induced hole doping in graphene

  19. Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric

    International Nuclear Information System (INIS)

    Zhang, Wen-Peng; Chen, Sun; Qian, Shi-Bing; Ding, Shi-Jin

    2015-01-01

    We studied how the performance of In–Ga–Zn–O (IGZO) thin film transistors (TFTs) with Al 2 O 3 gate insulator was affected by post-fabrication annealing temperature and annealing time. At a fixed annealing time of 2 min, the IGZO TFT exhibited the best transfer and output characteristics in the case of 300 °C in N 2 atmosphere, which is attributed to the achievement of appropriate carrier concentration and Hall mobility in the IGZO film. Further, it was found that both of the carrier concentration and Hall mobility in the IGZO film increased with the increment of annealing temperature. For the annealing temperature of 300 °C, the performance of the IGZO TFT was further improved by extending annealing time to 5 min, i.e., the field effect mobility, sub-threshold swing and on/off current ratio were 11.6 cm 2 /(V · s), 0.42 V dec −1 and 10 6 , respectively. The underlying mechanism was discussed. (paper)

  20. Effect of thermal annealing on electron spin relaxation of beryllium-doped In{sub 0.8}Ga{sub 0.2}As{sub 0.45}P{sub 0.55} bulk

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hao; Harasawa, Ryo; Yasue, Yuya; Aritake, Takanori; Jiang, Canyu; Tackeuchi, Atsushi, E-mail: atacke@waseda.jp [Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan); Ji, Lian; Lu, Shulong [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Dushu Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou (China)

    2016-08-15

    The effect of thermal annealing on the electron spin relaxation of beryllium-doped In{sub 0.8}Ga{sub 0.2}As{sub 0.45}P{sub 0.55} bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4) ns at 10 (300) K, which was more than two (four) times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.

  1. Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk

    Directory of Open Access Journals (Sweden)

    Hao Wu

    2016-08-01

    Full Text Available The effect of thermal annealing on the electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4 ns at 10 (300 K, which was more than two (four times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.

  2. Effect of Te atmosphere annealing on the properties of CdZnTe single crystals

    International Nuclear Information System (INIS)

    Yu Pengfei; Jie Wanqi; Wang Tao

    2011-01-01

    Low-resistivity CdZnTe:In (CZT:In) single crystals were annealed under Te atmosphere according to the behaviors of deep-donor Te antisite. The results indicated that the star-like Cd inclusions were completely eliminated after 120 h annealing. Meanwhile, the resistivity is greatly enhanced. The resistivity of the slice annealed after 240 h was achieved as high as 1.8x10 11 Ω cm, five orders of magnitude higher than that of as-grown slice. It suggested that the deep-donor level Te antisites were successfully introduced to pin the Fermi level at the mid band-gap position. The IR transmittances of the slices were also improved, which increased as the annealing time increased. PL measurement revealed that the (D 0 ,X) peak representing high quality of CZT crystal appeared. It can be concluded that the quality of CZT crystals is obviously improved after annealing under Te atmosphere. - Highlights: → High resistivity is due to deep-donor level Te Cd . → The resistivity achieved was as high as 1.8x10 11 Ω cm. → Star-like inclusions are Cd inclusions. → (D 0 ,X) peak represents the improvement of the crystal quality.

  3. Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Hyunpil Boo

    2012-01-01

    Full Text Available P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050∘C for 30∼90 min for activation. Boron emitters were activated at 1000∘C or higher, while phosphorus emitters were activated at 950∘C. QSSPC measurements show that the implied Voc of boron emitters increases about 15 mV and the J01 decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the implied Voc decreases from 622 mV to 560 mV and the J01 increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178 μs to 14 μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δηabs=−1.3%, while, for n-type implanted solar cells, deep junction annealing increases the efficiency and Voc, especially (Δηabs=+0.4% for backside emitter solar cells.

  4. The Effect of Annealing on the Elastic Modulus of Orthodontic Wires

    Science.gov (United States)

    Higginbottom, Kyle

    Introduction: Nickel Titanium orthodontic wires are currently used in orthodontic treatment due to their heat activated properties and their delivery of constant force. The objective of this study was to determine the effect of annealing on the elastic modulus of Nickel Titanium, Stainless Steel and Beta-titanium (TMA) wires. Different points along the wire were tested in order to determine how far from the annealed ends the elastic modulus of the wires was affected. Methods: Eighty (80) orthodontic wires consisting of 4 equal groups (SS/TMA/Classic NitinolRTM/Super Elastic NitinolRTM) were used as the specimens for this study. All wires were measured and marked at 5mm measurements, and cut into 33.00mm sections. The wires were heated with a butane torch until the first 13.00mm of the wires were red hot. Load deflection tests using an InstronRTM universal testing machine were run at 5mm distances from the end of the wire that had been annealed. The change in elastic modulus was then determined. Results: There was a significant difference (F = 533.001, p = 0.0005) in the change in elastic modulus for the four distances. There was also a significant difference (F = 57.571, p = 0.0005) in the change in elastic modulus for the four wire types. There was a significant interaction (F = 19.601, p = 0.005) between wire type and distance, however this interaction negated the differences between the wires. Conclusion: 1) There are significant differences in the changes in elastic modulus between the areas of the wires within the annealed section and those areas 5mm and 10mm away from the annealed section. The change in elastic modulus within the annealed section was significantly greater at 8 mm than it was at 13mm, and this was significantly greater than 18mm and 23mm (5mm and 10mm beyond the annealed section). However, there was no statistical difference in the change in elastic modulus between 5mm and 10mm away from the annealed section (18mm and 23mm respectively). 2

  5. The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,GaSe2 Absorber Layers Prepared by Annealing Stacked Metallic Precursors

    Directory of Open Access Journals (Sweden)

    Chia-Ho Huang

    2014-01-01

    Full Text Available CIGS films are prepared by single-stage annealing of the solid Se-coated In/Cu-Ga bilayer precursor. The annealing processes were performed using various Ar pressures, heating rates, and soaking times. A higher Ar pressure is needed to fabricate highly crystalline CIGS films, as no extra Se-vapor source is supplied. As the heating rate increases, the surface morphologies of the CIGS films become looser and some cracks are observed. However, the influence of soaking time is insignificant and the selenization process only requires a short time when the precursors are selenized at a higher temperature with a lower heating rate and a higher Ar pressure. In this study, a dense chalcopyrite CIGS film with a thickness of about 1.5-1.6 μm, with large grains (~1.2 μm and no cracking or peeling is obtained after selenizing at a temperature of 550°C, an Ar pressure of 300 Torr, a heating rate of 60°C/min, and a soaking time of 20 min. By adequate design of the stacked precursor and controlling the annealing parameters, single-stage annealing of the solid Se-coated In/Cu-Ga bilayer precursor is simplified for the fabrication of a fully crystallized chalcopyrite CIGS absorber layers with good crystallization and large grains.

  6. Effect of annealing on properties of sputtered and nitrogen-implanted ZnO:Ga thin films

    Directory of Open Access Journals (Sweden)

    Vojs M.

    2012-07-01

    Full Text Available Thin films of gallium-doped zinc oxide (ZnO:Ga were deposited on Corning glass substrates by rf diode sputtering and then implanted with 180 keV nitrogen ions in the dose range of 1 × 1015 ÷ 2 × 1016 cm-2. After the ion implantation, the films were annealed under oxygen and nitrogen ambient, at different temperatures and time, and the effect on their microstructure, type and range of conductivity, and optical properties was investigated. Post-implantation annealing at 550 °C resulted in n-type conductivity films with the highest electron concentration of 1.4 × 1020 cm-3. It was found that the annealing parameters had a profound impact on the film’s properties. A p-type conductivity (a hole concentration of 2.8 × 1019 cm-3, mobility of 0.6 cm2/V s was observed in a sample implanted with 1 × 1016 cm-2 after a rapid thermal annealing (RTA in N2 at 400 °C. Optical transmittance of all films was >84% in the wavelength range of 390–1100 nm. The SIMS depth profile of the complex 30NO− ions reproduces well a Gaussian profile of ion implantation. XRD patterns reveal a polycrystalline structure of N-implanted ZnO:Ga films with a c-axis preferred orientation of the crystallites. Depending on the annealing conditions, the estimated crystallite size increased 25 ÷ 42 nm and average micro-strains decreased 1.19 × 10-2 ÷ 6.5 × 10-3 respectively.

  7. Annealing effect of H+ -implanted single crystal silicon on strain and crystal structure

    International Nuclear Information System (INIS)

    Duo Xinzhong; Liu Weili; Zhang Miao; Gao Jianxia; Fu Xiaorong; Lin Chenglu

    2000-01-01

    The work focuses on the rocking curves of H + -implanted single silicon crystal detected by Four-Crystal X-ray diffractometer. The samples were annealed under different temperatures. Lattice defect in H + -implanted silicon crystals was detected by Rutherford Backscattering Spectrometry. It appeared that H-related complex did not crush until annealing temperature reached about 400 degree C. At that temperature H 2 was formed, deflated in silicon lattice and strained the lattice. But defects did not come into being in large quantity. The lattice was undamaged. When annealing temperature reached 500 degree C, strain induced by H 2 deflation crashed the silicon lattice. A large number of defects were formed. At the same time bubbles in the crystal and blister/flaking on the surface could be observed

  8. Effect of annealing process on TiN/TiC bilayers grown by pulsed arc discharge

    International Nuclear Information System (INIS)

    Ramos-Rivera, L.; Escobar, D.; Benavides-Palacios, V.; Arango, P.J.; Restrepo-Parra, E.

    2012-01-01

    In this work, a study of annealing process effect on TiN/TiC bilayer is presented. The annealing temperature was varied between room temperature and 500 °C. Materials were produced by the plasma-assisted pulsed vacuum arc discharge technique. In order to grow the films, a target of Ti with 99.9999% purity and stainless-steel 304 substrate were used. For the production of TiN layer, the reaction chamber was filled up with nitrogen gas until reaching 25 Pa and the discharge was performed at 310 V. The TiC layer was grown in a methane atmosphere at 30 Pa and 270 V. X-ray diffraction and X photoelectron spectroscopy were employed for studying the structure and chemical composition evolution during the annealing process. At 400 °C, TiO 2 phase begun to appear and it was well observed at 500 °C. Crystallite size and microstrain was obtained as a function of the annealing temperature. XPS technique was employed for analyzing the bilayers before and after the annealing process. Narrow spectra of Ti2p, N1s and O1s were obtained, presenting TiO phases.

  9. Effect of pre-annealing on NO32- centers in synthetic hydroxyapatite

    International Nuclear Information System (INIS)

    Nosenko, V.V.; Vorona, I.P.; Ishchenko, S.S.; Baran, N.P.; Zatovsky, I.V.; Gorodilova, N.A.; Povarchuk, V.Yu.

    2012-01-01

    Effect of pre-annealing of synthetic hydroxyapatite (HAP) on properties of γ- and UV- induced NO 3 2- centers was studied by electron paramagnetic resonance (EPR). Nitrate-containing hydroxyapatite powders ((N)HAP)) and the powders with an admixture of carbonate and nitrate ions ((C,N)HAP) were annealed in the temperature range T ann = 20 °C − 600 °C before irradiation. It was found that pre-annealing of (N)HAP samples changes the parameters of NO 3 2- centers while no changes took place in (C,N)HAP. Moreover, at the pre-annealing temperatures T ann > 200 °C two new NO 3 2- centers were observed in (N)HAP samples; they are characterized by larger value of A ⊥ (3.67 and 4.41 mT) as compared to the known centers. It was also found that the dependence of NO 3 2- centers amount on T ann is non-monotonous in both types of samples. Presumably this is caused by the escape of water molecules from HAP during the annealing and essential modification of the defect subsystem of HAP.

  10. Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors

    Directory of Open Access Journals (Sweden)

    Sihui Hou

    2018-03-01

    Full Text Available Nitrogen dioxide (NO2 sensors based on organic thin-film transistors (OTFTs were fabricated by conventional annealing (horizontal and vertical annealing processes of organic semiconductor (OSC films. The NO2 responsivity of OTFTs to 15 ppm of NO2 is 1408% under conditions of vertical annealing and only 72% when conventional annealing is applied. Moreover, gas sensors obtained by vertical annealing achieve a high sensing performance of 589% already at 1 ppm of NO2, while showing a preferential response to NO2 compared with SO2, NH3, CO, and H2S. To analyze the mechanism of performance improvement of OTFT gas sensors, the morphologies of 6,13-bis(triisopropylsilylethynyl-pentacene (TIPS-pentacene films were characterized by atomic force microscopy (AFM in tapping mode. The results show that, in well-aligned TIPS-pentacene films, a large number of effective grain boundaries inside the conducting channel contribute to the enhancement of NO2 gas sensing performance.

  11. Effect of annealing on photoluminescence properties of neon implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Ali, Akbar [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan); Zhu, J J [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Wang, Y T [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Liu, W [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Lu, G J [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Liu, W B [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Zhang, L Q [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Liu, Z S [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Zhao, D G [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Zhang, S M [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China); Jiang, D S; Yang, H [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China)

    2008-01-21

    The effect of thermal annealing on the luminescence properties of neon implanted GaN thin films was studied. Low temperature photoluminescence (PL) measurements were carried out on the samples implanted with different doses ranging from 10{sup 14} to 9 x 10{sup 15} cm{sup -2} and annealed isochronally at 800 and 900 deg. C. We observed a new peak appearing at 3.44 eV in the low temperative PL spectra of all the implanted samples after annealing at 900 deg. C. This peak has not been observed in the PL spectra of implanted samples annealed at 800 deg. C except for the samples implanted with the highest dose. The intensity of the yellow luminescence (YL) band noticed in the PL spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 x 10{sup 15} cm{sup -2}. The appearance of a new peak at 3.44 eV and dose dependent suppression of the YL band are attributed to the dissociation of V{sub Ga}O{sub N} complexes caused by high energy ion implantation.

  12. Effect of annealing on photoluminescence properties of neon implanted GaN

    International Nuclear Information System (INIS)

    Majid, Abdul; Ali, Akbar; Zhu, J J; Wang, Y T; Liu, W; Lu, G J; Liu, W B; Zhang, L Q; Liu, Z S; Zhao, D G; Zhang, S M; Jiang, D S; Yang, H

    2008-01-01

    The effect of thermal annealing on the luminescence properties of neon implanted GaN thin films was studied. Low temperature photoluminescence (PL) measurements were carried out on the samples implanted with different doses ranging from 10 14 to 9 x 10 15 cm -2 and annealed isochronally at 800 and 900 deg. C. We observed a new peak appearing at 3.44 eV in the low temperative PL spectra of all the implanted samples after annealing at 900 deg. C. This peak has not been observed in the PL spectra of implanted samples annealed at 800 deg. C except for the samples implanted with the highest dose. The intensity of the yellow luminescence (YL) band noticed in the PL spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 x 10 15 cm -2 . The appearance of a new peak at 3.44 eV and dose dependent suppression of the YL band are attributed to the dissociation of V Ga O N complexes caused by high energy ion implantation

  13. Effects of cold worked and fully annealed claddings on fuel failure behaviour

    International Nuclear Information System (INIS)

    Saito, Shinzo; Hoshino, Hiroaki; Shiozawa, Shusaku; Yanagihara, Satoshi

    1979-12-01

    Described are the results of six differently heat-treated Zircaloy clad fuel rod tests in NSRR experiments. The purpose of the test is to examine the extent of simulating irradiated claddings in mechanical properties by as-cold worked ones and also the effect of fully annealing on the fuel failure bahaviour in a reactivity initiated accident (RIA) condition. As-cold worked cladding does not properly simulated the embrittlement of the irradiated one in a RIA condition, because the cladding is fully annealed before the fuel failure even in the short transient. Therefore, the fuel behaviour such as fuel failure threshold energy, failure mechanism, cladding deformation and cladding oxidation of the fully annealed cladding fuel, as well as that of the as-cold worked cladding fuel, are not much different from that of the standard stress-relieved cladding fuel. (author)

  14. The effect of thermal annealing on pentacene thin film transistor with micro contact printing.

    Science.gov (United States)

    Shin, Hong-Sik; Yun, Ho-Jin; Baek, Kyu-Ha; Ham, Yong-Hyun; Park, Kun-Sik; Kim, Dong-Pyo; Lee, Ga-Won; Lee, Hi-Deok; Lee, Kijun; Do, Lee-Mi

    2012-07-01

    We used micro contact printing (micro-CP) to fabricate inverted coplanar pentacene thin film transistors (TFTs) with 1-microm channels. The patterning of micro-scale source/drain electrodes without etch process was successfully achieved using Polydimethylsiloxane (PDMS) elastomer stamp. We used the Ag nano particle ink as an electrode material, and the sheet resistance and surface roughness of the Ag electrodes were effectively reduced with the 2-step thermal annealing on a hotplate, which improved the mobility, the on-off ratio, and the subthreshold slope (SS) of the pentacene TFTs. In addition, the device annealing on a hotplate in a N2 atmosphere for 30 sec can enhance the off-current and the mobility properties of OTFTs without damaging the pentacene thin films and increase the adhesion between pentacene and dielectric layer (SiO2), which was investigated with the pentacene films phase change of the XRD spectrum after device annealing.

  15. Effect of annealing on bulk heterojunction organic solar cells based on copper phthalocyanine and perylene derivative

    KAUST Repository

    Kim, Inho

    2012-02-01

    We investigated the effects of annealing on device performances of bulk heterojunction organic solar cells based on copper phthalocyanine (CuPc) and N,N′-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C6). Blended films of CuPc and PTCDI-C6 with annealing at elevated temperature were characterized by measuring optical absorption, photoluminescence, and X-ray diffraction. Enhanced molecular ordering and increments in domain sizes of donor and acceptor for the blended films were observed, and their influences on device performances were discussed. Annealing led to substantial improvements in photocurrent owing to enhanced molecular ordering and formation of percolation pathways. © 2011 Elsevier B.V. All rights reserved.

  16. MoO3 Thickness, Thermal Annealing and Solvent Annealing Effects on Inverted and Direct Polymer Photovoltaic Solar Cells

    Directory of Open Access Journals (Sweden)

    Guillaume Wantz

    2012-11-01

    Full Text Available Several parameters of the fabrication process of inverted polymer bulk heterojunction solar cells based on titanium oxide as an electron selective layer and molybdenum oxide as a hole selective layer were tested in order to achieve efficient organic photovoltaic solar cells. Thermal annealing treatment is a common process to achieve optimum morphology, but it proved to be damageable for the performance of this kind of inverted solar cells. We demonstrate using Auger analysis combined with argon etching that diffusion of species occurs from the MoO3/Ag top layers into the active layer upon thermal annealing. In order to achieve efficient devices, the morphology of the bulk heterojunction was then manipulated using the solvent annealing technique as an alternative to thermal annealing. The influence of the MoO3 thickness was studied on inverted, as well as direct, structure. It appeared that only 1 nm-thick MoO3 is enough to exhibit highly efficient devices (PCE = 3.8% and that increasing the thickness up to 15 nm does not change the device performance. 

  17. Effect of annealing atmosphere on optic-electric properties of Zn O thin films

    International Nuclear Information System (INIS)

    Bueno, C.; Pacio, M.; Juarez, H.; Osorio, E.; Perez, R.

    2017-01-01

    In this work the study of structural, morphologic characteristics, optical and electrical properties of the thin films of Zn O in temperatures and annealing atmospheres different was realized. The films were obtained by the sol-gel method, utilizing zinc acetate dihydrate as the precursor, monoethanolamine (Mea) as a stabilizing agent and 2-methoxyethanol as a solvent and deposited by spin-coating. The films were crystallized at 600, 800 and 1000 degrees Celsius in oxygen and nitrogen atmospheres. The results obtained by XRD, Sem, photoluminescence and Hall effects of the Zn O films were related and depend strongly on the temperature and atmosphere annealing. (Author)

  18. Effect of annealing atmosphere on optic-electric properties of Zn O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bueno, C. [Benemerita Universidad Autonoma de Puebla, Facultad de Ingenieria, Blvd. Valsequillo y Av. San Claudio s/n, 72570 Puebla (Mexico); Pacio, M.; Juarez, H. [Benemerita Universidad Autonoma de Puebla, Posgrado en Dispositivos Semiconductores, Av. San Claudio y 14 Sur, 72450 Puebla (Mexico); Osorio, E. [Universidad de Quinta Roo, Blvd. Bahia s/n, esquina Ignacio Comonfort, El Bosque, 77019 Chetumal, Quintana Roo (Mexico); Perez, R., E-mail: cba3009@gmail.com [Benemerita Universidad Autonoma de Puebla, Facultad de Ingenieria Quimica, Av. San Claudio y 18 Sur, 72570 Puebla (Mexico)

    2017-11-01

    In this work the study of structural, morphologic characteristics, optical and electrical properties of the thin films of Zn O in temperatures and annealing atmospheres different was realized. The films were obtained by the sol-gel method, utilizing zinc acetate dihydrate as the precursor, monoethanolamine (Mea) as a stabilizing agent and 2-methoxyethanol as a solvent and deposited by spin-coating. The films were crystallized at 600, 800 and 1000 degrees Celsius in oxygen and nitrogen atmospheres. The results obtained by XRD, Sem, photoluminescence and Hall effects of the Zn O films were related and depend strongly on the temperature and atmosphere annealing. (Author)

  19. Long annealing effect on spin Seebeck devices fabricated using Ce x Y3- x Fe5O12 deposited by metal-organic decomposition

    Science.gov (United States)

    Ono, Tatsuyoshi; Hirata, Satoshi; Amemiya, Yoshiteru; Tabei, Tetsuo; Yokoyama, Shin

    2018-04-01

    The effects of Ce content and annealing temperature on the electromotive force produced by spin Seebeck devices fabricated using Ce x Y3- x Fe5O12 deposited by metal-organic decomposition was investigated. The Ce content was first varied (x = 0,1,2,3) for a fixed annealing condition of 3 h at 900 °C. It was found that increasing the Ce content led to a decrease in electromotive force, which meant that x = 0 was the optimum Ce content. Next, the effect of annealing temperature was investigated for a Ce1Y2Fe5O12 film for an annealing time of 14 h. The highest electromotive force of 24.0 µV/50 °C was obtained for a sample annealed for 14 h at 800 °C, although the X-ray diffraction peaks were weaker than those for a sample annealed for 14 h at 950 °C.

  20. Through-vial impedance spectroscopy of the mechanisms of annealing in the freeze-drying of maltodextrin: the impact of annealing hold time and temperature on the primary drying rate.

    Science.gov (United States)

    Smith, Geoff; Arshad, Muhammad Sohail; Polygalov, Eugene; Ermolina, Irina

    2014-06-01

    The study aims to investigate the impact of annealing hold time and temperature on the primary drying rate/duration of a 10% (w/v) solution of maltodextrin with an emphasis on how the mechanisms of annealing might be understood from the in-vial measurements of the ice crystal growth and the glass transition. The electrical impedance of the solution within a modified glass vial was recorded between 10 and 10(6) Hz during freeze-drying cycles with varying annealing hold times (1-5 h) and temperatures. Primary drying times decreased by 7%, 27% and 34% (1.1, 4.3 and 5.5 h) with the inclusion of an annealing step at temperatures of -15°C, -10°C and -5°C, respectively. The glass transition was recorded at approximately -16°C during the re-heating and re-cooling steps, which is close to the glass transition (Tg ') reported for 10% (w/v) maltodextrin and therefore indicates that a maximum freeze concentration (∼86%, w/w, from the Gordon-Taylor equation) was achieved during first freezing, with no further ice being formed on annealing. This observation, coupled to the decrease in electrical resistance that was observed during the annealing hold time, suggests that the reduction in the drying time was because of improved connectivity of ice crystals because of Ostwald ripening rather than devitrification. © 2014 Wiley Periodicals, Inc. and the American Pharmacists Association.

  1. Effect of electric-spark alloying and subsequent annealing on the thermal stability of metallic structural materials

    International Nuclear Information System (INIS)

    Vdovin, S.F.; Reshetnikov, S.M.

    2000-01-01

    The effect of annealing on resistive properties of electric-spark coatings on the carbon steels is studied. The steels 10 and 20 samples with electric spark coatings of various compositions and control ones without annealing and coating are chosen for the study. The steels cr27 and 12cr18ni10ti, the nichrome (cr20ni80) alloy, aluminium as well as compositions of these materials: aluminium + cr27 and aluminium + nichrome were used as coating materials. It is shown that aluminium coatings increase the steel 10 heat resistance more them by 4 times, the aluminium + nichrome coatings - more than by 6 times and aluminium + cr27 coatings - more than by 6 times. In contrast to the electric-spark coating of the carbon steel surface by chromium-nickel alloys, the composition aluminium-containing coatings with annealing in vacuum provide for reliability of long-term protection of these steels from air oxidation with the temperature above the aluminium melting [ru

  2. Effect of Annealing on the Pitting Corrosion Resistance of Anodized Aluminum-Magnesium Alloy Processed by Equal Channel Angular Pressing

    Energy Technology Data Exchange (ETDEWEB)

    Son, In Joon; Nakano, Hiroaki; Oue, Satoshi; Fukushima, Hisaaki; Horita, Zenji [Kyushu University, Fukuoka (Japan); Kobayashi, Shigeo [Kyushu Sangyo University, Fukuoka (Japan)

    2007-12-15

    The effect of annealing on the pitting corrosion resistance of anodized Al-Mg alloy (AA5052) processed by equal-channel angular pressing (ECAP) was investigated by electrochemical techniques in a solution containing 0.2 mol/L of AlCl{sub 3} and also by surface analysis. The Al-Mg alloy was annealed at a fixed temperature between 473 and 573 K for 120 min in air after ECAP. Anodizing was conducted for 40 min at 100-400 A/m{sup 2} at 293 K in a solution containing 1.53 mol/L of H{sub 2}SO{sub 4} and 0.0185 mol/L of Al{sub 2}(SO{sub 4}){sub 3}. The internal stress generated in anodic oxide films during anodization was measured with a strain gauge to clarify the effect of ECAP on the pitting corrosion resistance of anodized Al-Mg alloy. The time required to initiate the pitting corrosion of anodized Al-Mg alloy was shorter in samples subjected to ECAP, indicating that ECAP decreased the pitting corrosion resistance. however, the pitting corrosion resistance was greatly improved by annealing after ECAP. The time required to initiate pitting corrosion increased with increasing annealing temperature. The strain gauge attached to Al-Mg alloy revealed that the internal stress present in the anodic oxide films was compressive stress, and that the stress was larger with ECAP than without. The compressive internal stress gradually decreased with increasing annealing temperature. Scanning electron microscopy showed that cracks occurred in the anodic oxide film on Al-Mg alloy during initial corrosion and that the cracks were larger with ECAP than without. The ECAP process of severe plastic deformation produces large internal stresses in the Al-Mg alloy: the stresses remain in the anodic oxide films, increasing the likelihood of cracks. it is assumed that the pitting corrosion is promoted by these cracks as a result of the higher internal stress resulting from ECAP. The improvement in the pitting corrosion resistance of anodized AlMg alloy as a result of annealing appears to be

  3. Effect of Annealing on the Pitting Corrosion Resistance of Anodized Aluminum-Magnesium Alloy Processed by Equal Channel Angular Pressing

    International Nuclear Information System (INIS)

    Son, In Joon; Nakano, Hiroaki; Oue, Satoshi; Fukushima, Hisaaki; Horita, Zenji; Kobayashi, Shigeo

    2007-01-01

    The effect of annealing on the pitting corrosion resistance of anodized Al-Mg alloy (AA5052) processed by equal-channel angular pressing (ECAP) was investigated by electrochemical techniques in a solution containing 0.2 mol/L of AlCl 3 and also by surface analysis. The Al-Mg alloy was annealed at a fixed temperature between 473 and 573 K for 120 min in air after ECAP. Anodizing was conducted for 40 min at 100-400 A/m 2 at 293 K in a solution containing 1.53 mol/L of H 2 SO 4 and 0.0185 mol/L of Al 2 (SO 4 ) 3 . The internal stress generated in anodic oxide films during anodization was measured with a strain gauge to clarify the effect of ECAP on the pitting corrosion resistance of anodized Al-Mg alloy. The time required to initiate the pitting corrosion of anodized Al-Mg alloy was shorter in samples subjected to ECAP, indicating that ECAP decreased the pitting corrosion resistance. however, the pitting corrosion resistance was greatly improved by annealing after ECAP. The time required to initiate pitting corrosion increased with increasing annealing temperature. The strain gauge attached to Al-Mg alloy revealed that the internal stress present in the anodic oxide films was compressive stress, and that the stress was larger with ECAP than without. The compressive internal stress gradually decreased with increasing annealing temperature. Scanning electron microscopy showed that cracks occurred in the anodic oxide film on Al-Mg alloy during initial corrosion and that the cracks were larger with ECAP than without. The ECAP process of severe plastic deformation produces large internal stresses in the Al-Mg alloy: the stresses remain in the anodic oxide films, increasing the likelihood of cracks. it is assumed that the pitting corrosion is promoted by these cracks as a result of the higher internal stress resulting from ECAP. The improvement in the pitting corrosion resistance of anodized AlMg alloy as a result of annealing appears to be attributable to a decrease in

  4. Effects of a modular two-step ozone-water and annealing process on silicon carbide graphene

    Energy Technology Data Exchange (ETDEWEB)

    Webb, Matthew J., E-mail: matthew.webb@cantab.net; Lundstedt, Anna; Grennberg, Helena [Department of Chemistry—BMC, Uppsala University, Box 576, SE-751 23 Uppsala (Sweden); Polley, Craig; Niu, Yuran; Zakharov, Alexei A.; Balasubramanian, Thiagarajan [MAX IV Laboratory, Lund University, 22100 Lund (Sweden); Dirscherl, Kai [DFM—Danish Fundamental Metrology, Matematiktorvet 307, DK-2800 Lyngby (Denmark); Burwell, Gregory; Guy, Owen J. [College of Engineering, Faraday Tower, Singleton Park, Swansea University, Swansea SA2 8PP (United Kingdom); Palmgren, Pål [VG Scienta Scientific AB, Box 15120, Vallongatan 1, SE-750 15 Uppsala (Sweden); Yakimova, Rositsa [Department of Physics, Chemistry, and Biology, Linköping University, SE-581 83 Linköping (Sweden)

    2014-08-25

    By combining ozone and water, the effect of exposing epitaxial graphene on silicon carbide to an aggressive wet-chemical process has been evaluated after high temperature annealing in ultra high vacuum. The decomposition of ozone in water produces a number of oxidizing species, however, despite long exposure times to the aqueous-ozone environment, no graphene oxide was observed after the two-step process. The systems were comprehensively characterized before and after processing using Raman spectroscopy, core level photoemission spectroscopy, and angle resolved photoemission spectroscopy together with low energy electron diffraction, low energy electron microscopy, and atomic force microscopy. In spite of the chemical potential of the aqueous-ozone reaction environment, the graphene domains were largely unaffected raising the prospect of employing such simple chemical and annealing protocols to clean or prepare epitaxial graphene surfaces.

  5. Numerical analysis on effect of annealing mc-Si ingot grown by DS process for PV application

    Science.gov (United States)

    Aravindan, G.; Srinivasan, M.; Aravinth, K.; Ramasamy, P.

    2017-10-01

    Silicon solar cells play a crucial role in Photo voltaic (PV) application. We have numerically investigated thermal stress and normal stress components (Sigma 11, Sigma 22, Sigma 33 and sigma 12) by using finite volume method. The maximum thermal stress has low value at the centre region for 900 K and 700 K annealing temperatures comparing all the cases. The maximum thermal stress at peripheral region is low for 700 K annealing compared to 900 K annealing. The annealing effect of mc-Si ingot normal stress components is discussed. At 700 K annealing temperature the normal stress in 11 and 33 direction has lower maximum and at the 900 K annealing temperature the normal stress in 22 and 12 direction has lower maximum.

  6. Photo annealing effect on p-doped inverted organic solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Lafalce, Evan; Toglia, Patrick; Lewis, Jason E.; Jiang, Xiaomei, E-mail: xjiang@usf.edu [Department of Physics, University of South Florida, Tampa, Florida 33620 (United States)

    2014-06-28

    We report the transient positive photo annealing effect in which over 600% boost of power conversion efficiency was observed in inverted organic photovoltaic devices (OPV) made from P3HT/PCBM by spray method, after 2 hrs of constant solar AM 1.5 irradiation at low temperature. This is opposite to usual photodegradation of OPV, and cannot be explained by thermal activation alone since the mere temperature effect could only account for 30% of the enhancement. We have investigated the temperature dependence, cell geometry, oxygen influence, and conclude that, for p-doped active layer at room temperature, the predominant mechanism is photo-desorption of O{sub 2}, which eliminates electron traps and reduces space charge screening. As temperature decreases, thermal activation and deep trap-state filling start to show noticeable effect on the enhancement of photocurrent at intermediate low temperature (T = 125 K). At very low temperature, the dominant mechanism for photo annealing is trap-filling, which significantly reduces recombination between free and trapped carriers. At all temperature, photo annealing effect depends on illumination direction from cathode or anode. We also explained the large fluctuation of photocurrent by the capture/reemit of trapped electrons from shallow electron traps of O{sub 2}{sup -} generated by photo-doping. Our study has demonstrated the dynamic process of photo-doping and photo-desorption, and shown that photo annealing in vacuum can be an efficient method to improve OPV device efficiency.

  7. Effect of annealing treatments on normal state resistivity of YBa 2 ...

    African Journals Online (AJOL)

    Samples of YBa2(Cu1-xTix)3Oy superconductor with x=0.00 , 0.01, 0.03 have been prepared by solide state reaction method. The effect of annealing treatments on normal electrical resistivity has been done using the bipolaron model. The results of this study show the increase of localized charge when the dopant content ...

  8. Annealing effects on the charged particles registration characteristic of the CR-39 traces solid detector

    International Nuclear Information System (INIS)

    Correa, M.M.

    1989-10-01

    CR-39 trace solid detectors samples, previously exposed to alpha particles and fission fragments from a Cf-252 source, were submitted to a annealing treatment to study his effects on the characteristics of charged particle traces registration. (L.C.J.A.)

  9. Effects of substrate temperature and post-deposition anneal on properties of evaporated cadmium telluride films

    International Nuclear Information System (INIS)

    Bacaksiz, E.; Basol, B.M.; Altunbas, M.; Novruzov, V.; Yanmaz, E.; Nezir, S.

    2007-01-01

    The effects of substrate temperature and post-deposition heat treatment steps on the morphology, structural, optical and electrical properties of thin film CdTe layers grown by vacuum evaporation were investigated. Scanning electron microscopy and X-ray diffraction (XRD) techniques were employed to study the structural changes. It was observed that the grain sizes and morphologies of as-deposited layers were similar for substrate temperatures of - 173 deg. C and - 73 deg. C. However, CdTe films produced at a substrate temperature of 27 deg. C had substantially larger grain size and clearly facetted morphology. Annealing at 200-400 deg. C in air did not cause any appreciable grain growth in any of the films irrespective of their growth temperature. However, annealing at 400 deg. C reduced faceting in all cases and initiated fusing between grains. XRD studies showed that this behavior after annealing at 400 deg. C coincided with an onset of a degree of randomization in the originally strong (111) texture of the as-grown layers. Optical band gap measurements showed sharpening of the band-edge upon annealing at 400 deg. C and a band gap value in the range of 1.46-1.49 eV. Resistivity measurements indicated that annealing at 400 deg. C in air forms a highly resistive compensated CdTe film. All results point to 400 deg. C to be a critical annealing temperature at which optical, structural and electrical properties of CdTe layers start to change

  10. Studies of annealing of neutron-produced defects in silicon by transconductance measurements of junction field-effect transistors

    International Nuclear Information System (INIS)

    Tokuda, Y.; Usami, A.

    1978-01-01

    Annealing behavior of neutron-produced defects in silicon was studied by measuring the phase angle theta of the small-signal transconductance of the junction field-effect transistors (JFET's). Three deep levels (N-1, N-2, and N-3 levels) in n-type silicon and two deep levels (P-1 and P-2 levels) in p-type silicon, introduced by irradiation, annealed gradually. Their energy levels and capture cross sections have been already reported by us. Three deep levels (P-3, P-4, and P-5 levels) were observed in annealed p-type silicon in the temperature range 150--300 0 C. For these defects, theta was measured as a function of frequency to obtain the time constant. From the temperature dependence of the time constant, assuming that capture cross sections are independent of temperature, the energy levels of P-3, P-4, and P-5 were estimated to be E/sub v/+0.21, E/sub v/+0.40, and E/sub v/+0.30 eV, respectively. The calculated hole capture cross sections of these levels were 2.2 x 10 -15 , 8.7 x 10 -14 , and 1.2 x 10 -14 cm 2 , respectively. Comparison with other published data was made. It was found that N-3 and P-2 levels corresponded to the divacancy. Furthermore, it seemed that P-3, P-4, and P-5 levels corresponded to the high-order vacancy defects

  11. Annealing effect on structural and optical properties of chemical bath deposited MnS thin film

    Energy Technology Data Exchange (ETDEWEB)

    Ulutas, Cemal, E-mail: cemalulutas@hakkari.edu.tr [Faculty of Education, Hakkari Universty, 30000, Hakkari (Turkey); Gumus, Cebrail [Faculty of Science and Letters, Cukurova University, 01330, Adana (Turkey)

    2016-03-25

    MnS thin film was prepared by the chemical bath deposition (CBD) method on commercial microscope glass substrate deposited at 30 °C. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (150, 300 and 450 °C) for 1 h. The MnS thin film was characterized by using X-ray diffraction (XRD), UV-vis spectrophotometer and Hall effect measurement system. The effect of annealing temperature on the structural, electrical and optical properties such as optical constants of refractive index (n) and energy band gap (E{sub g}) of the film was determined. XRD measurements reveal that the film is crystallized in the wurtzite phase and changed to tetragonal Mn{sub 3}O{sub 4} phase after being annealed at 300 °C. The energy band gap of film decreased from 3.69 eV to 3.21 eV based on the annealing temperature.

  12. Effects of homogenization treatment on recrystallization behavior of 7150 aluminum sheet during post-rolling annealing

    International Nuclear Information System (INIS)

    Guo, Zhanying; Zhao, Gang; Chen, X.-Grant

    2016-01-01

    The effects of two homogenization treatments applied to the direct chill (DC) cast billet on the recrystallization behavior in 7150 aluminum alloy during post-rolling annealing have been investigated using the electron backscatter diffraction (EBSD) technique. Following hot and cold rolling to the sheet, measured orientation maps, the recrystallization fraction and grain size, the misorientation angle and the subgrain size were used to characterize the recovery and recrystallization processes at different annealing temperatures. The results were compared between the conventional one-step homogenization and the new two-step homogenization, with the first step being pretreated at 250 °C. Al_3Zr dispersoids with higher densities and smaller sizes were obtained after the two-step homogenization, which strongly retarded subgrain/grain boundary mobility and inhibited recrystallization. Compared with the conventional one-step homogenized samples, a significantly lower recrystallized fraction and a smaller recrystallized grain size were obtained under all annealing conditions after cold rolling in the two-step homogenized samples. - Highlights: • Effects of two homogenization treatments on recrystallization in 7150 Al sheets • Quantitative study on the recrystallization evolution during post-rolling annealing • Al_3Zr dispersoids with higher densities and smaller sizes after two-step treatment • Higher recrystallization resistance of 7150 sheets with two-step homogenization

  13. Postdeposition Annealing Effect on Cu2ZnSnS4 Thin Films Grown at Different Substrate Temperature

    Directory of Open Access Journals (Sweden)

    Samia Ahmed Nadi

    2014-01-01

    Full Text Available Cu2ZnSnS4 (CZTS thin films were deposited on top of Molybdenum (Mo coated soda lime glass (SLG substrates using a single target rf magnetron sputtering technique. The sputtering parameters such as base pressure, working pressure, rf power, argon (Ar gas flow rate, and deposition time were kept consistent throughout the experiment. The effect of different substrate temperatures, for example, room temperature (RT, 300°C, 350°C, 370°C, 400°C, and 450°C, was analyzed by studying their structural, electrical, and optical properties. As-sputtered films were then annealed at 460°C. X-ray diffraction (XRD measurement revealed the structure to be kesterite with peak of (112 plane in both annealed and as-sputtered CZTS thin films. The crystallinity of the films improved with the increasing substrate temperature until 370°C. Secondary phases of MoS2, CuxMoSx, CuxSnSx, CuxS, and Cu6MoSnS8 (hemusite were also observed in the annealed CZTS films. Scanning electron microscopy (SEM shows crystallite size of deposited CZTS thin film to be proportionally related to deposition temperature. The highest surface roughness of 67.318 nm is observed by atomic force microscopy (AFM. The conductivity type of the films was found to be p-type by Hall effect measurement system.

  14. Effect of Annealing Heat Treatment to Characteristics of AlDC8 (Al-Si-Cu) Alloy

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Kyung Man; Lee, Sung-Yul; Lee, Myeong Hoon; Jeong, Jae-Hyun [Korea Maritime and Ocean University, Busan (Korea, Republic of); Baek, Tae-Sil [Pohang College, Pohang (Korea, Republic of)

    2015-12-15

    ALDC8 (Al-Si-Cu) alloy has been often corroded with pattern of intergranular corrosion in corrosive environments. Thus, in order to improve its corrosion resistance, the effect of annealing heat treatment to corrosion resistance and hardness was investigated with parameters of heating temperatures such as 100 ℃, 200 ℃, 300 ℃, 400 ℃ and 500 ℃ for 1hr. The hardness was varied with annealing temperature and slightly decreased with annealing heat treatment. However, the relation between annealing temperature and hardness agreed not well each other. Corrosion potential was shifted to noble direction and corrosion current density was also decreased with increasing annealing temperature. Moreover, both AC impedance at 10 mHz and polarization resistance on the cyclic voltammogram curve were also increased with increasing annealing temperature. Furthermore, intergranular corrosion was somewhat observed in non heat treatment as well as annealing temperatures at 100 ℃, 200 ℃ and 300 ℃, while, intergranular corrosion was not nearly observed at annealing temperature of 400 ℃, 500 ℃. Consequently, it is considered that the annealing heat treatment of ALDC8 alloy may be an available method not only to inhibit its intergranular corrosion but also to improve its corrosion resistance.

  15. CrCuAgN PVD nanocomposite coatings: Effects of annealing on coating morphology and nanostructure

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xingguang, E-mail: xingguangliu1@gmail.com [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom); Iamvasant, Chanon, E-mail: ciamvasant1@sheffield.ac.uk [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom); Liu, Chang, E-mail: chang.liu@sheffield.ac.uk [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom); Matthews, Allan, E-mail: allan.matthews@manchester.ac.uk [Pariser Building - B24 ICAM, School of Materials, The University of Manchester, Manchester, M13 9PL (United Kingdom); Leyland, Adrian, E-mail: a.leyland@sheffield.ac.uk [Department of Materials Science and Engineering, Sir Robert Hadfield Building, The University of Sheffield, Mappin Street, Sheffield, S1 3JD (United Kingdom)

    2017-01-15

    Highlights: • Coatings with nitrogen content up to 16 at.% exhibit a metallic Cr solid solution, even after post-coat annealing at 300 °C and 500 °C. • At higher N/Cr atomic ratios (approaching Cr{sub 2}N stoichiometry), chromium was still inclined to exist in solid solution with nitrogen, rather than as a ceramic nitride phase, even after annealing at 500 °C. • Transportation of Cu and Ag to the surface depends on annealing temperature, annealing duration, nitrogen concentration and ‘global’ Cu + Ag concentration. • Incorporation of copper appears to be a powerful strategy to enhance Ag mobility at low concentration (∼3 at.% Ag in this study) under moderately high service temperature. • A significant decrease in friction coefficient was obtained at room temperature after annealing, or during sliding wear testing at elevated temperature. - Abstract: CrCuAgN PVD nanocomposite coatings were produced using pulsed DC unbalanced magnetron sputtering. This investigation focuses on the effects of post-coat annealing on the surface morphology, phase composition and nanostructure of such coatings. In coatings with nitrogen contents up to 16 at.%, chromium exists as metallic Cr with N in supersaturated solid solution, even after 300 °C and 500 °C post-coat annealing. Annealing at 300 °C did not obviously change the phase composition of both nitrogen-free and nitrogen-containing coatings; however, 500 °C annealing resulted in significant transformation of the nitrogen-containing coatings. The formation of Ag aggregates relates to the (Cu + Ag)/Cr atomic ratio (threshold around 0.2), whereas the formation of Cu aggregates relates to the (Cu + Ag + N)/Cr atomic ratio (threshold around 0.5). The primary annealing-induced changes were reduced solubility of Cu, Ag and N in Cr, and the composition altering from a mixed ultra-fine nanocrystalline and partly amorphous phase constitution to a coarser, but still largely nanocrystalline structure. It was also

  16. Effects of thermal annealing and reirradiation on toughness of reactor pressure vessel steels

    International Nuclear Information System (INIS)

    Nanstad, R.K.; Iskander, S.K.; Sokolov, M.A.

    1996-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPV) is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. This paper summarizes recent experimental results from work performed at the Oak Ridge National Laboratory (ORNL) to study the annealing response, or open-quotes recovery,close quotes of several irradiated RPV steels; it also includes recent results from both ORNL and the Russian Research Center-Kurchatov Institute (RRC-KI) on a cooperative program of irradiation, annealing and reirradiation of both U.S. and Russian RPV steels. The cooperative program was conducted under the auspices of Working Group 3, U.S./Russia Joint Coordinating Committee for Civilian Nuclear Reactor Safety (JCCCNRS). The materials investigated are an RPV plate and various submerged-arc welds, with tensile, Charpy impact toughness, and fracture toughness results variously determined. Experimental results are compared with applicable prediction guidelines, while observed differences in annealing responses and reirradiation rates are discussed

  17. Effects of thermal annealing and reirradiation on toughness of reactor pressure vessel steels

    International Nuclear Information System (INIS)

    Nanstad, R.K.; Iskander, S.K.; Sokolov, M.A.

    1997-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPV) is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. This paper summarizes recent experimental results from work performed at the Oak Ridge National Laboratory (ORNL) to study the annealing response, or open-quotes recovery,close quotes of several irradiated RPV steels; it also includes recent results from both ORNL and the Russian Research Center-Kurchatov Institute (RRC-KI) on a cooperative program of irradiation, annealing and reirradiation of both U.S. and Russian RPV steels. The cooperative program was conducted under the auspices of Working Group 3, U.S./Russia Joint Coordinating Committee for Civilian Nuclear Reactor Safety (JCCCNRS). The materials investigated are an RPV plate and various submerged-arc welds, with tensile, Charpy impact toughness, and fracture toughness results variously determined. Experimental results are compared with applicable prediction guidelines, while observed differences in annealing responses and reirradiation rates are discussed

  18. Effect of annealing temperature on the anatase and rutile TiO2 nano tubes formation

    International Nuclear Information System (INIS)

    Zainovia Lockman; Kit, C.H.; Srimala Sreekantan

    2009-01-01

    Herein, we report on the optimum condition for TiO 2 titania nano tubes formation and the effect of annealing on the formation of anatse and rutile titania. Anodic oxidation was carried out in two electrodes bath consisting of 5 wt % NH 4 F ions. The anode was a 0.1 mm thick Ti foil and the cathode was Pt electrode. Anodization was conducted at 20 V. The anodised foils were subjected to morphological and structural characterizations. As-anodised foil was found to be amorphous or weakly crystalline. When the oxide was heat treated, x-ray diffraction analysis revealed the presence of (101) anatase at annealing temperature from 400 - 500 degree Celsius. This indicates that the transformation occurs at this range of temperatures. Raman spectroscopy analysis showed the diminishing of anatase peaks for samples annealed at 500 degree Celsius. At above 600 degree Celsius, x-ray diffraction pattern shows a peak belonging to the rutile peak. Transformation from anatase to rutile is thought to occur at about 500 degree Celsius with a more complete transformation at higher temperature. Annealing at higher than 600 degree Celsius induces thickening of the nano tubes wall and at above 700 degree Celsius, the nano tubes structure has completely disappeared. (author)

  19. The effect of annealing ambient on surface segregation in indium implanted sapphire

    International Nuclear Information System (INIS)

    Sood, D.K.; Victoria University of Technology, Melbourne; Zhou, W.; Victoria University of Technology, Melbourne; Academia Sinica, Shanghai Institute of Metallurgy; Cao, D.X.; Victoria University of Technology, Melbourne; Academia Sinica, Shanghai, SH

    1991-01-01

    A systematic study of the effect of annealing ambient on both indium surface segregation and lattice damage recovery of single crystal Al 2 O 3 has been done by performing 1 hour anneals at 800 deg C for the samples identically implanted with indium ions at 100keV energy to a high dose of 5x10 16 ions/cm 2 . Following solid phase epitaxial re-crystallization of amorphous layer, the indium dopant shows rapid thermal migration. The indium redistribution consists of 2 parts: 1. appreciable broadening corresponding to diffusion within the amorphous layer, and 2. indium segregation to the free surface to form In 2 O 3 , or escape out of the surface to sublime into the surrounding ambient. Lattice damage recovery depends on indium concentration profile in amorphous layer of Al 2 O 3 which is directly influenced by the annealing ambient. It is confirmed that the presence of moisture or oxygen in annealing ambient results in In 2 O 3 formation on the surface. (author). 6 refs.; 3 figs.; 1 tab

  20. Improvement of the matrix effect compensation in active neutron measurement by simulated annealing algorithm (June 2009)

    International Nuclear Information System (INIS)

    Raoux, A. C.; Loridon, J.; Mariani, A.; Passard, C.

    2009-01-01

    Active neutron measurements such as the Differential Die-Away (DDA) technique involving pulsed neutron generator, are widely applied to determine the fissile content of waste packages. Unfortunately, the main drawback of such techniques is coming from the lack of knowledge of the waste matrix composition. Thus, the matrix effect correction for the DDA measurement is an essential improvement in the field of fissile material content determination. Different solutions have been developed to compensate the effect of the matrix on the neutron measurement interpretation. In this context, this paper describes an innovative matrix correction method we have developed with the goal of increasing the accuracy of the matrix effect correction and reducing the measurement time. The implementation of this method is based on the analysis of the raw signal with an optimisation algorithm called the simulated annealing algorithm. This algorithm needs a reference data base of Multi-Channel Scaling (MCS) spectra, to fit the raw signal. The construction of the MCS library involves a learning phase to define and acquire the DDA signals. This database has been provided by a set of active signals from experimental matrices (mock-up waste drums of 118 litres) recorded in a specific device dedicated to neutron measurement research and development of the Nuclear Measurement Laboratory of CEA-Cadarache, called PROMETHEE 6. The simulated annealing algorithm is applied to make use of the effect of the matrices on the total active signal of DDA measurement. Furthermore, as this algorithm is directly applied to the raw active signal, it is very useful when active background contributions can not be easily estimated and removed. Most of the cases tested during this work which represents the feasibility phase of the method, are within a 4% agreement interval with the expected experimental value. Moreover, one can notice that without any compensation of the matrix effect, the classical DDA prompt

  1. Improvement of the matrix effect compensation in active neutron measurement by simulated annealing algorithm (June 2009)

    Energy Technology Data Exchange (ETDEWEB)

    Raoux, A. C.; Loridon, J.; Mariani, A.; Passard, C. [French Atomic Energy Commission, DEN, Cadarache, F-3108 Saint-Paul-Lez-Durance (France)

    2009-07-01

    Active neutron measurements such as the Differential Die-Away (DDA) technique involving pulsed neutron generator, are widely applied to determine the fissile content of waste packages. Unfortunately, the main drawback of such techniques is coming from the lack of knowledge of the waste matrix composition. Thus, the matrix effect correction for the DDA measurement is an essential improvement in the field of fissile material content determination. Different solutions have been developed to compensate the effect of the matrix on the neutron measurement interpretation. In this context, this paper describes an innovative matrix correction method we have developed with the goal of increasing the accuracy of the matrix effect correction and reducing the measurement time. The implementation of this method is based on the analysis of the raw signal with an optimisation algorithm called the simulated annealing algorithm. This algorithm needs a reference data base of Multi-Channel Scaling (MCS) spectra, to fit the raw signal. The construction of the MCS library involves a learning phase to define and acquire the DDA signals. This database has been provided by a set of active signals from experimental matrices (mock-up waste drums of 118 litres) recorded in a specific device dedicated to neutron measurement research and development of the Nuclear Measurement Laboratory of CEA-Cadarache, called PROMETHEE 6. The simulated annealing algorithm is applied to make use of the effect of the matrices on the total active signal of DDA measurement. Furthermore, as this algorithm is directly applied to the raw active signal, it is very useful when active background contributions can not be easily estimated and removed. Most of the cases tested during this work which represents the feasibility phase of the method, are within a 4% agreement interval with the expected experimental value. Moreover, one can notice that without any compensation of the matrix effect, the classical DDA prompt

  2. Effect of solution annealing temperature on precipitation in 2205 duplex stainless steel

    International Nuclear Information System (INIS)

    Kashiwar, A.; Vennela, N. Phani; Kamath, S.L.; Khatirkar, R.K.

    2012-01-01

    In the present study, effect of solution annealing temperature (1050 °C and 1100 °C) and isothermal ageing (700 °C: 15 min to 6 h) on the microstructural changes in 2205 duplex stainless steel has been investigated systematically. Scanning electron microscopy and X-ray diffraction were adopted to follow the microstructural evolution, while an energy dispersive spectrometer attached to scanning electron microscope was used to obtain localised chemical information of various phases. The ferritic matrix of the two phase 2205 duplex stainless steel (∼ 45% ferrite and ∼ 55% austenite) undergoes a series of metallurgical transformations during ageing—formation of secondary austenite (γ 2 ) and precipitation of Cr and Mo rich intermetallic (chi-χ and sigma-σ) phases. For solution annealing at 1050 °C, significant amount of carbides were observed in the ferrite grains after 1 h of ageing at 700 °C. χ Phase precipitated after the precipitation of carbides—preferentially at the ferrite–ferrite and also at the ferrite–austenite boundaries. σ Phase was not observed in significant quantity even after 6 h of ageing. The sequence of precipitation in samples solution annealed at 1050 °C was found to be carbides → χ → σ. On the contrary, for samples solution annealed at 1100 °C, the precipitation of χ phase was negligible. χ Phase precipitated before σ phase, preferentially along the ferrite–ferrite grain boundaries and was later consumed in the σ phase precipitation. The σ phase precipitated via the eutectoid transformation of ferrite to yield secondary austenite γ 2 and σ phase in the ferrite and along the ferrite–austenite grain boundaries. An increase in the volume fraction of γ 2 and σ phase with simultaneous decrease in the ferrite was evidenced with ageing. - Highlights: ► Effect of solution annealing temperature on microstructural evolution is studied. ► χ Phase precipitated preferentially in the samples solution annealed at

  3. Effect of solution annealing temperature on precipitation in 2205 duplex stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Kashiwar, A., E-mail: akashiwar@gmail.com [Department of Metallurgical and Materials Engineering, Visvesvaraya National Institute of Technology (VNIT), South Ambazari Road, Nagpur-440010, Maharashtra (India); Vennela, N. Phani, E-mail: phanivennela@gmail.com [Department of Metallurgical and Materials Engineering, Visvesvaraya National Institute of Technology (VNIT), South Ambazari Road, Nagpur-440010, Maharashtra (India); Kamath, S.L., E-mail: kamath@iitb.ac.in [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay (IITB), Powai, Mumbai-400076, Maharashtra (India); Khatirkar, R.K., E-mail: rajesh.khatirkar@gmail.com [Department of Metallurgical and Materials Engineering, Visvesvaraya National Institute of Technology (VNIT), South Ambazari Road, Nagpur-440010, Maharashtra (India)

    2012-12-15

    In the present study, effect of solution annealing temperature (1050 Degree-Sign C and 1100 Degree-Sign C) and isothermal ageing (700 Degree-Sign C: 15 min to 6 h) on the microstructural changes in 2205 duplex stainless steel has been investigated systematically. Scanning electron microscopy and X-ray diffraction were adopted to follow the microstructural evolution, while an energy dispersive spectrometer attached to scanning electron microscope was used to obtain localised chemical information of various phases. The ferritic matrix of the two phase 2205 duplex stainless steel ({approx} 45% ferrite and {approx} 55% austenite) undergoes a series of metallurgical transformations during ageing-formation of secondary austenite ({gamma}{sub 2}) and precipitation of Cr and Mo rich intermetallic (chi-{chi} and sigma-{sigma}) phases. For solution annealing at 1050 Degree-Sign C, significant amount of carbides were observed in the ferrite grains after 1 h of ageing at 700 Degree-Sign C. {chi} Phase precipitated after the precipitation of carbides-preferentially at the ferrite-ferrite and also at the ferrite-austenite boundaries. {sigma} Phase was not observed in significant quantity even after 6 h of ageing. The sequence of precipitation in samples solution annealed at 1050 Degree-Sign C was found to be carbides {yields} {chi} {yields} {sigma}. On the contrary, for samples solution annealed at 1100 Degree-Sign C, the precipitation of {chi} phase was negligible. {chi} Phase precipitated before {sigma} phase, preferentially along the ferrite-ferrite grain boundaries and was later consumed in the {sigma} phase precipitation. The {sigma} phase precipitated via the eutectoid transformation of ferrite to yield secondary austenite {gamma}{sub 2} and {sigma} phase in the ferrite and along the ferrite-austenite grain boundaries. An increase in the volume fraction of {gamma}{sub 2} and {sigma} phase with simultaneous decrease in the ferrite was evidenced with ageing. - Highlights

  4. Irradiation, Annealing, and Reirradiation Effects on American and Russian Reactor Pressure Vessel Steels

    International Nuclear Information System (INIS)

    Chernobaeva, A.A.; Korolev, Y.N.; Nanstad, R.K.; Nikolaev, Y.A.; Sokolov, M.A.

    1998-01-01

    One of the options to mitigate the effects of irradiation on reactor pressure vessels (RPVs) is to thermally anneal them to restore the toughness properties that have been degraded by neutron irradiation. Even though a postirradiation anneal may be deemed successful, a critical aspect of continued RPV operation is the rate of embrittlement upon reirradiation. There are insufficient data available to allow for verification of available models of reirradiation embrittlement or for the development of a reliable predictive methodology. This is especially true in the case of fracture toughness data. Under the U.S.-Russia Joint Coordinating Committee for Civilian Nuclear Reactor Safety (JCCCNRS), Working Group 3 on Radiation Embrittlement, Structural Integrity, and Life Extension of Reactor Vessels and Supports agreed to conduct a comparative study of annealing and reirradiation effects on RPV steels. The Working Group agreed that each side would irradiate, anneal, reirradiate (if feasible ), and test two materials of the other. Charpy V-notch (CVN) and tensile specimens were included. Oak Ridge National Laboratory (ORNL) conducted such a program (irradiation and annealing, including static fracture toughness) with two weld metals representative of VVER-440 and VVER-1000 RPVs, while the Russian Research Center-Kurchatov Institute (RRC-KI) conducted a program (irradiation, annealing, reirradiation, and reannealing) with Heavy-Section Steel Technology (HSST) Program Plate 02 and Heavy-Section Steel Irradiation (HSSI) Program Weld 73W. The results for each material from each laboratory are compared with those from the other laboratory. The ORNL experiments with the VVER welds included irradiation to about 1 x 10 19 n/cm 2 (>1 MeV), while the RRC-KI experiments with the U.S. materials included irradiations from about 2 to 18 x 10 19 n/cm 2 (>l MeV). In both cases, irradiations were conducted at ∼290 C and annealing treatments were conducted at ∼454 C. The ORNL and RRC

  5. Effect of annealing conditions on the molecular properties and wetting of viscoelastic bitumen substrates by liquids

    Directory of Open Access Journals (Sweden)

    Salomé dos Santos

    2017-01-01

    Full Text Available Typically, in the production of asphalt concrete, bitumen and mineral aggregates are heated and mixed at temperatures above 100 °C. After the mixing process bitumen ideally coats the mineral aggregates and remains in the form of thin films. Because bitumen is highly temperature sensitive, the study of its properties in terms of chemistry, microstructure and rheology as a function of different annealing conditions is very relevant. The resultant molecular properties have a direct correlation to bitumen macroscopic response to liquids such as water, which is of extreme relevance to the understanding of the detrimental effect of water on asphalt pavements. The wetting characteristics play a crucial role on the extension of detachment of bitumen from the mineral aggregates when asphalt is exposed to wet conditions. Therefore, in this work, the effect of the annealing temperature and cooling history on the chemistry, microstructure and wetting of bitumen films was studied. Crystalline microstructures were identified in bulk and on the surface of the bitumen films. Larger crystals presenting higher crystallinity degree were identified when the annealed bitumen films were cooled slowly. Moreover, higher annealing temperatures increased the oxidation level. The change of the rheological properties due to the alterations of the annealing conditions produced changes in the wetting characteristics. For instance, the advancing motion of a liquid drop on the viscoelastic bitumen substrate presented an intermittent behaviour due to the deformation of bitumen at the liquid-bitumen-air contact line. Consequently, changes in the contact angles were also observed. Keywords: Bitumen, Crystallization, Oxidation, Advancing contact angle, Wetting

  6. Memory effects in annealed hybrid gold nanoparticles/block copolymer bilayers

    Directory of Open Access Journals (Sweden)

    Ruffino Francesco

    2011-01-01

    Full Text Available Abstract We report on the use of the self-organization process of sputtered gold nanoparticles on a self-assembled block copolymer film deposited by horizontal precipitation Langmuir-Blodgett (HP-LB method. The morphology and the phase-separation of a film of poly-n-butylacrylate-block-polyacrylic acid (PnBuA-b-PAA were studied at the nanometric scale by using atomic force microscopy (AFM and Time of Flight Secondary Ion Mass Spectrometry (TOF-SIMS. The templating capability of the PnBuA-b-PAA phase-separated film was studied by sputtering gold nanoparticles (NPs, forming a film of nanometric thickness. The effect of the polymer chain mobility onto the organization of gold nanoparticle layer was assessed by heating the obtained hybrid PnBuA-b-PAA/Au NPs bilayer at T >Tg. The nanoparticles' distribution onto the different copolymer domains was found strongly affected by the annealing treatment, showing a peculiar memory effect, which modifies the AFM phase response of the Au NPs layer onto the polar domains, without affecting their surfacial composition. The effect is discussed in terms of the peculiar morphological features induced by enhanced mobility of polymer chains on the Au NPs layer.

  7. Influence of annealing time on pH sensitivity of ZnO sensing membrane for EGFET sensor

    Science.gov (United States)

    Zulkefle, M. A.; Rahman, R. A.; Yusoff, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

    2018-05-01

    Solid-state materials have becomes essential in recent technological advancements. This study also utilized solid-state material but in form of thin films to sense hydrogen ions in solutions. Fabrication of ZnO thin film was done using sol-gel spin coating technique. In an attempt to increase the pH sensitivity of the produced film, prolonging of annealing time was done. It was found that the increase in annealing time from 15 minutes to 30 minutes had managed to improve the sensitivity by 4.35%. The optimum pH sensitivity and linearity obtained in this study is 50.40 mV/pH and 0.9911 respectively.

  8. Effect of electrothermal annealing on the transformation behavior of TiNi shape memory alloy and two-way shape memory spring actuated by direct electrical current

    International Nuclear Information System (INIS)

    Wang, Z.G.; Zu, X.T.; Feng, X.D.; Zhu, S.; Deng, J.; Wang, L.M.

    2004-01-01

    In this work, the effect of electrothermal annealing on the transformation characterization of TiNi shape memory alloy and the electrothermal actuating characteristics of a two-way shape memory effect (TWSME) extension spring were investigated with direct electrical current. The results showed that with increasing direct electrical current density, the B2→R-phase transformation shifts to a lower temperature and R-phase→B19' shifts to a higher temperature in the cooling process. When annealing electrical current density reached 12.2 A/mm 2 , the R-phase disappeared and austenite transformed into martensite directly. The electrothermal annealing was an effective method of heat treatment in a selected part of shape memory alloy device. The electrothermal actuating characteristics of a TWSME spring showed that the time response and the maximum elongation greatly depended on the magnitude of the electrical current

  9. Effects of thermal annealing on the radiation produced electron paramagnetic resonance spectra of bovine and equine tooth enamel: Fossil and modern

    International Nuclear Information System (INIS)

    Weeks, Robert A.; Bogard, James S.; Elam, J. Michael; Weinand, Daniel C.; Kramer, Andrew

    2003-01-01

    The concentration of stable radiation-induced paramagnetic states in fossil teeth can be used as a measure of sample age. Temperature excursions >100 deg. C, however, can cause the paramagnetic state clock to differ from the actual postmortem time. We have heated irradiated enamel from both fossilized bovid and modern equine (MEQ) teeth for 30 min in 50 deg. C increments from 100 to 300 deg. C, measuring the electron paramagnetic resonance (EPR) spectrum after each anneal, to investigate such effects. Samples were irradiated again after the last anneal, with doses of 300-1200 Gy from 60 Co photons, and measured. Two unirradiated MEQ samples were also annealed for 30 min at 300 deg. C, one in an evacuated EPR tube and the other in a tube open to the atmosphere, and subsequently irradiated. The data showed that hyperfine components attributed to the alanine radical were not detected in the irradiated MEQ sample until after the anneals. The spectrum of the MEQ sample heated in air and then irradiated was similar to that of the heat treated fossil sample. We conclude that the hyperfine components are due to sample heating to temperatures/times >100 deg. C/30 min and that similarities between fossil and MEQ spectra after the 300 deg. C/30 min MEQ anneal are also due to sample heating. We conclude that the presence of the hyperfine components in spectra of fossil tooth enamel indicate that such thermal events occurred either at the time of death, or during the postmortem history

  10. Effect of grain boundary microcracks on crack resistance of annealed tungsten

    International Nuclear Information System (INIS)

    Babak, A.V.; Uskov, E.I.

    1984-01-01

    Effect of grain boundary microcracks in tungsten, produced by the method of powder sintering, on its crack resistance after annealing at T=2200 deg C, has been considered. On the basis of complex physncomechanical study of tungsten crack resistance it is shown, that the value of ultimate tensile stress does not depend on temperature. The presence of grain boundary cracks in such material (in the limits from 2 to 8%) does not produce effect on its crack resistance

  11. Effect of annealing on the structural properties of electron beam deposited CIGS thin films

    Energy Technology Data Exchange (ETDEWEB)

    Venkatachalam, M. [Department of Electronics, Erode Arts College, Erode (India)], E-mail: prabhu7737@yahoo.com; Kannan, M.D.; Jayakumar, S.; Balasundaraprabhu, R. [Thin Film Center, PSG College of Technology, Coimbatore (India); Muthukumarasamy, N. [Department of Physics, Coimbatore Institute of Technology, Coimbatore (India)

    2008-08-30

    CIGS bulk compound of three different compositions CuIn{sub 0.85}Ga{sub 0.15}Se{sub 2}, CuIn{sub 0.80}Ga{sub 0.20}Se{sub 2} and CuIn{sub 0.75}Ga{sub 0.25}Se{sub 2} have been prepared by direct reaction of elemental copper, indium, gallium and selenium. CIGS thin films of the three compositions have been deposited onto glass and silicon substrates using the prepared bulk by electron beam deposition method. The structural properties of the deposited films have been studied using X-ray diffraction technique. The as-deposited CIGS films have been found to be amorphous in nature. To study the effect of annealing on the structural properties, the films have been annealed in vacuum of the order of 10{sup -5} Torr. The X-ray diffractograms of the annealed CIGS films exhibited peaks revealing that the annealed films are crystalline in nature with tetragonal chalcopyrite structure. The (112) peak corresponding to the chalcopyrite structure has been observed to be the dominating peak in all the annealed films. The position of the (112) peak and other peaks in the X-ray diffraction pattern has been observed to shift to higher values of 2{theta} with the increase of gallium concentration. The lattice parameter values 'a' and 'c' have been calculated and they are found to be dependent on the concentration of gallium in the films. The FWHM in the X-ray diffraction pattern is found to decrease with an increase in annealing temperature indicating that the crystalline nature of the CIGS improves with increase in annealing temperature. The films grown on silicon substrates have been found to be of better crystalline quality than those deposited on glass substrates. The micro structural parameters like grain size, dislocation density and strain have been evaluated. The chemical constituents present in the deposited CIGS films have been identified using energy dispersive X-ray analysis. The surface topographical study on the films has been performed by AFM. The

  12. Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots

    Science.gov (United States)

    Alireza, Samavati; Othaman, Z.; K. Ghoshal, S.; K. Mustafa, M.

    2015-02-01

    The influences of thermal annealing on the structural and optical features of radio frequency (rf) magnetron sputtered self-assembled Ge quantum dots (QDs) on Si (100) are investigated. Preferentially oriented structures of Ge along the (220) and (111) directions together with peak shift and reduced strain (4.9% to 2.7%) due to post-annealing at 650 °C are discerned from x-ray differaction (XRD) measurement. Atomic force microscopy (AFM) images for both pre-annealed and post-annealed (650 °C) samples reveal pyramidal-shaped QDs (density ˜ 0.26× 1011 cm-2) and dome-shape morphologies with relatively high density ˜ 0.92 × 1011 cm-2, respectively. This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity. The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role. The observed red-shift ˜ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing, and is related to the effect of quantum confinement. Furthermore, the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO2 or GeOx and holes in the ground state of Ge dots. Raman spectra of both samples exhibit an intense Ge-Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart. An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes. A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established. Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated. Project supported by Ibnu Sina Institute for Fundamental Science Study, Universiti Teknologi Malaysia

  13. Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots

    International Nuclear Information System (INIS)

    Samavati, Alireza; Othaman, Z.; Ghoshal, S. K.; Mustafa, M. K.

    2015-01-01

    The influences of thermal annealing on the structural and optical features of radio frequency (rf) magnetron sputtered self-assembled Ge quantum dots (QDs) on Si (100) are investigated. Preferentially oriented structures of Ge along the (220) and (111) directions together with peak shift and reduced strain (4.9% to 2.7%) due to post-annealing at 650 °C are discerned from x-ray differaction (XRD) measurement. Atomic force microscopy (AFM) images for both pre-annealed and post-annealed (650 °C) samples reveal pyramidal-shaped QDs (density ∼ 0.26× 10 11 cm −2 ) and dome-shape morphologies with relatively high density ∼ 0.92 × 10 11 cm −2 , respectively. This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity. The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role. The observed red-shift ∼ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing, and is related to the effect of quantum confinement. Furthermore, the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO 2 or GeO x and holes in the ground state of Ge dots. Raman spectra of both samples exhibit an intense Ge–Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart. An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes. A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established. Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated. (paper)

  14. Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Heo, J.H.; Shin, C.M. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-02-01

    ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 deg. C with the concentration of 0.3 M exhibits the best structural and optical properties.

  15. RESIDENCE TIMES OF PARTICLES IN DIFFUSIVE PROTOPLANETARY DISK ENVIRONMENTS. II. RADIAL MOTIONS AND APPLICATIONS TO DUST ANNEALING

    International Nuclear Information System (INIS)

    Ciesla, F. J.

    2011-01-01

    The origin of crystalline grains in comets and the outer regions of protoplanetary disks remains a mystery. It has been suggested that such grains form via annealing of amorphous precursors in the hot, inner region of a protoplanetary disk, where the temperatures needed for such transformations were found, and were then transported outward by some dynamical means. Here we develop a means of tracking the paths that dust grains would have taken through a diffusive protoplanetary disk and examine the types and ranges of environments that particles would have seen over a 10 6 yr time period in the dynamic disk. We then combine this model with three annealing laws to examine how the dynamic evolution of amorphous grains would have led to their physical restructuring and their delivery to various regions of the disk. It is found that 'sibling particles' - those particles that reside at the same location at a given period of time-take a wide range of unique and independent paths through the disk to arrive there. While high temperatures can persist in the disk for very long time periods, we find that those grains that are delivered to the cold outer regions of the disk are largely annealed in the first few x10 5 yr of disk history. This suggests that the crystallinity of grains in the outer disk would be determined early and remain unchanged for much of disk history, in agreement with recent astronomical observations.

  16. Study of annealing effects on the giant magnetoresistance in ferromagnetic alloys

    International Nuclear Information System (INIS)

    Ju Sheng; Li Zhenya

    2005-01-01

    A self-consistent macroscopic theory is developed to improve on that of Gu et al (1996 Phys. Rev. B 53 11685) and to provide a physical understanding of some new experimental observations in ferromagnetic alloys. For composites with non-spherical inclusions, which is the general case in artificial granular systems, previous models based on the calculation of a spherical particle in the dilute limit are inadequate. By considering the particle shape distribution and its evolution with annealing effects, we have studied the shape dependence of the giant magnetoresistance (GMR) in ferromagnetic alloys. It is found that both the particle shape and its orientation are effective factors in determining the magnitude of the GMR. Based on a comparison between our calculations and experimental data, a comprehensive picture of the effects of annealing on GMR is obtained

  17. Thin porous indium tin oxide nanoparticle films: effects of annealing in vacuum and air

    International Nuclear Information System (INIS)

    Ederth, J.; Hultaaker, A.; Niklasson, G.A.; Granqvist, C.G.; Heszler, P.; Doorn, A.R. van; Jongerius, M.J.; Burgard, D.

    2005-01-01

    Electrical and optical properties were investigated in porous thin films consisting of In 2 O 3 :Sn (indium tin oxide; ITO) nanoparticles. The temperature-dependent resistivity was successfully described by a fluctuation-induced tunneling model, indicating a sample morphology dominated by clusters of ITO nanoparticles separated by insulating barriers. An effective-medium model, including the effect of ionized impurity scattering, was successfully fitted to measured reflectance and transmittance. Post-deposition treatments were carried out at 773 K for 2 h in both air and vacuum. It is shown that vacuum annealing increases either the barrier width or the area between two conducting clusters in the samples and, furthermore, an extra optical absorption occurs close to the band gap. A subsequent air annealing then reduces the effect of the barriers on the electrical properties and diminishes the absorption close to the band gap. (orig.)

  18. Effect of the Annealing Temperature on the Structure and Magnetic Properties of 2% Si Steel

    Directory of Open Access Journals (Sweden)

    Cunha Marco A. da

    2002-01-01

    Full Text Available To study the effect of the annealing temperature on the structure and magnetic properties of a 2%Si non-oriented steel cold rolled samples were submitted to final annealing in the temperature range of 540 °C to 980 °C in hydrogen atmosphere. The samples had received cold rolling reduction of 75% to a final thickness of 0.50 mm. Recovery and recrystallization resulted in significant improvement of magnetic properties, with decrease of iron loss (W1.5 and increase of polarisation (J50 and relative permeability (µ1.5. On further grain growth, after recrystallization, there was simultaneous decrease of iron loss, polarisation and relative permeability. Texture evolution on grain growth accounts for the observed decrease of J50 and µ1.5. The beneficial effect of increasing grain size on core loss overcomes the detrimental effect of texture resulting in decrease of W1.5.

  19. Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2

    International Nuclear Information System (INIS)

    Stavarache, Ionel; Lepadatu, Ana-Maria; Stoica, Toma; Ciurea, Magdalena Lidia

    2013-01-01

    Ge–SiO 2 films with high Ge/Si atomic ratio of about 1.86 were obtained by co-sputtering of Ge and SiO 2 targets and subsequently annealed at different temperatures between 600 and 1000 °C in a conventional furnace in order to show how the annealing process influences the film morphology concerning the Ge nanocrystal and/or amorphous nanoparticle formation and to study their electrical behaviour. Atomic force microscopy (AFM) imaging, Raman spectroscopy and electrical conductance measurements were performed in order to find out the annealing effect on the film surface morphology, as well as the Ge nanoparticle formation in correlation with the hopping conductivity of the films. AFM images show that the films annealed at 600 and 700 °C present a granular surface with particle height of about 15 nm, while those annealed at higher temperatures have smoother surface. The Raman investigations evidence Ge nanocrystals (including small ones) coexisting with amorphous Ge in the films annealed at 600 °C and show that almost all Ge is crystallized in the films annealed at 700 °C. The annealing at 800 °C disadvantages the Ge nanocrystal formation due to the strong Ge diffusion. This transition in Ge nanocrystals formation process by annealing temperature increase from 700 to 800 °C revealed by AFM and Raman spectroscopy measurements corresponds to a change in the electrical transport mechanism. Thus, in the 700 °C annealed films, the current depends on temperature according to a T −1/2 law which is typical for a tunnelling mechanism between neighbour Ge nanocrystals. In the 800 °C annealed films, the current–temperature characteristic has a T −1/4 dependence showing a hopping mechanism within an electronic band of localized states related to diffused Ge in SiO 2 .

  20. The effect of solution annealing on properties of steel Nitronic 60

    Directory of Open Access Journals (Sweden)

    A. Gigović-Gekić

    2011-01-01

    Full Text Available Nitronic 60 (UNS S21800 is a highly alloyed austenitic stainless steel. This steel provides exceptional wear and galling resistance as well as a high temperature corrosion resistance. Increasing strength of Nitronic 60 is obtained by cold deformation. A solution annealing is necessary to achieve a complete austenitic microstructure without the presence of precipitates in the matrix. This paper describes determination of the appropriate heat treatment to obtain austenitic microstructure with a minimum consumption of time and energy.

  1. Effects of thermal annealing on the performance of Al/ZnO nanorods/Pt structure ultraviolet photodetector

    International Nuclear Information System (INIS)

    Zhou Hai; Fang Guojia; Liu Nishuang; Zhao Xingzhong

    2011-01-01

    Highlights: → Schottky barrier ultraviolet photodetectors were obtained by sputtering Pt electrode and evaporating Al electrode on the top of ZnO nanorod arrays with thermal treatment. When annealing temperature was up to 300 deg. C, the performance of the PDs was improved with the great decrease of response and recovery times. → For annealing temperature at 300 deg. C and above, the responsivity decreases with increasing annealing temperature. → The ratio of detectivity (D254* to D546*) was calculated as high as 103 for all PDs annealed at 300 deg. C and above. - Abstract: ZnO nanorod arrays were fabricated on ZnO coated glass substrate by hydrothermal method. Schottky barrier ultraviolet photodetectors (PDs) were obtained by sputtering Pt electrode and evaporating Al electrode on the top of ZnO nanorod arrays with thermal treatment. It is illustrated that Schottky contacts at the electrode/ZnO NRs interface were formed at the annealing temperature of 300 deg. C and above. When annealing temperature was up to 300 o C, the performance of the PDs was improved with the great decrease of response and recovery times. At the forward bias of 2 V, the Schottky contact PDs showed the biggest responsivity and the best detectivity at the annealing temperature of 300 deg. C. For annealing temperature at 300 deg. C and above, the responsivity decreases with increasing annealing temperature and the ratio of detectivity (D 254 * to D 546 *) was calculated as high as 10 3 for all PDs annealed at 300 deg. C and above.

  2. The effects of annealing temperature on the permittivity and electromagnetic attenuation performance of reduced graphene oxide

    Science.gov (United States)

    Wu, Fan; Zeng, Qiao; Xia, Yilu; Sun, Mengxiao; Xie, Aming

    2018-05-01

    Reduced graphene oxide (RGO) has been prepared through the thermal reduction method with different annealing temperatures to explore the effects of temperature on the permittivity and electromagnetic attenuation performance. The real and imaginary parts of permittivity increase along with the decrease in the oxygen functional group and the increase in the filler loading ratio. A composite only loaded with 1 wt. % of RGO can possess an effective electromagnetic absorption bandwidth of 7.60 GHz, when graphene oxide was reduced under 300 °C for 2 h. With the annealing temperature increased to 700 °C and the well reduced RGO loaded 7 wt. % in the composite, the electromagnetic interference shielding efficiency can get higher than 35 dB from 2 to 18 GHz. This study shows that controlling the oxygen functional groups on the RGO surface can also obtain an ideal electromagnetic attenuation performance without any other decorated nanomaterials.

  3. Study on the influence of annealing effects in GaN VPE

    International Nuclear Information System (INIS)

    Furtado, M.

    1983-06-01

    The effects of annealing that occur during VPE growth of GaN were investigated. GaN powder (and epilayers) samples were annealed in Ar, N 2 , H 2 , NH 3 , HC1 + N 2 and HC1 + H 2 (N 2 , H 2 and HC1 + N 2 ), respectively; under a range of experimental conditions of interest for preparing electroluminescent devices. Good surface appearence Zn doped epilayers were also used under N 2 in order to investigate surface morphology changes due to thermal decomposition. It was found that GaN reacts with H 2 , remains stable under NH 3 , and the effects of thermal decomposition are somewhat enhanced with HC1. The epilayers' behaviour under thermal decomposition and HC1 are interpreted by the greater stability of the (0001) crystal plane, which accounts for the improvement of the surface quality under special growth conditions. Significant observations are reported concerning GaN decomposition in different ambients [pt

  4. Effect of annealing over optoelectronic properties of graphene based transparent electrodes

    Science.gov (United States)

    Yadav, Shriniwas; Kaur, Inderpreet

    2016-04-01

    Graphene, an atom-thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σdc/σopt) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

  5. Effect of thermal annealing on property changes of neutron-irradiated non-graphitized carbon materials and nuclear graphite

    International Nuclear Information System (INIS)

    Matsuo, Hideto

    1991-06-01

    Changes in dimension of non-graphitized carbon materials and nuclear graphite, and the bulk density, electrical resistivity, Young's modulus and thermal expansivity of nuclear graphite were studied after neutron irradiation at 1128-1483 K and the successive thermal annealing up to 2573 K. Carbon materials showed larger and anisotropic dimensional shrinkage than that of nuclear graphite after the irradiation. The irradiation-induced dimensional shrinkage of carbon materials decreased during annealing at temperatures from 1773 to 2023 K, followed by a slight increase at higher temperatures. On the other hand, the irradiated nuclear graphite hardly showed the changes in length, density and thermal expansivity under the thermal annealing, but the electrical resistivity and Young's modulus showed a gradual decrease with annealing temperature. It has been clarified that there exists significant difference in the effect of thermal annealing on irradiation-induced dimensional shrinkage between graphitized nuclear graphite and non-graphitized carbon materials. (author)

  6. Effect of annealing and In content on the properties of electron beam evaporated ZnO films

    Science.gov (United States)

    Mohamed, S. H.; Ali, H. M.; Mohamed, H. A.; Salem, A. M.

    2005-08-01

    The effect of both annealing and In content on the properties of ZnO films prepared by electron beam evaporation were investigated. The evaporation was carried out at room temperature from bulk samples prepared by sintering technique. X-ray diffraction showed that the structure of ZnO-In{2}O{3} films depends on both the In content and annealing temperature. Amorphous, highly transparent and relatively low resistive films which can be suitable for the usage as transparent electrode of organic light-emitting diode were obtained upon annealing at 300 circC. Partially crystalline, highly transparent and highly resistive films which can be used in piezoelectric applications were obtained upon annealing at 500 circC. For each composition the refractive index has no monotonic variation upon increasing annealing temperature.

  7. Effect of annealing on structural, optical and electrical properties of SILAR synthesized CuO thin film

    Science.gov (United States)

    Das, M. R.; Mukherjee, A.; Mitra, P.

    2017-05-01

    Nano crystalline CuO thin films were synthesize on glass substrate using SILAR technique. The structural, optical and electrical properties of the films were carried out for as deposited as well as for films post annealed in the temperature range 300 - 500° C. The X-ray diffraction pattern shows all the films are polycrystalline in nature with monoclinic phase. The crystallite size increase and lattice strain decreases with increase of annealing temperature indicating high quality of the films for annealed films. The value of band gap decreases with increases of annealing temperature of the film. The effect of annealing temperature on ionic conductivity and activation energy to electrical conduction process are discussed.

  8. Investigation of the annealing temperature effect on structural, morphology, dielectric and magnetic properties of BiFeO3 nanoparticles

    Science.gov (United States)

    Ranjbar, M.; Ghazi, M. E.; Izadifard, M.

    2018-06-01

    In this paper we have investigated the annealing temperature effect on the structure, morphology, dielectric and magnetic properties of sol-gel synthesized multiferroic BiFeO3 nanoparticles. X-ray diffraction spectroscopy revealed that all the samples have rhombohedrally distorted perovskite structure and the most pure BFO phase is obtained on the sample annealed at 800 °C. Field emission scanning electron microscopy (FESEM) revealed that increasing annealing temperature would increase the particle size. Decrease in dielectric constant was also observed by increasing annealing temperature. Vibrating sample method (VSM) analysis confirmed that samples annealed at 500-700 °C with particle size below the BFO's spiral spin structure length, have well saturated M-H curve and show ferromagnetic behavior.

  9. Effect of high temperature annealing on the microstructure of SCS-6 SiC fibers

    Science.gov (United States)

    Ning, X. J.; Pirouz, P.; Bhatt, R. T.

    1992-01-01

    The effect of annealing the SCS-6 SiC fiber for one hour at 2000 C in an argon atmosphere is reported. The SiC grains in the fiber coarsen appreciably and the intergranular carbon films segregate to the grain junctions. It would appear that grain growth in the outer part of the fiber is primarily responsible for the loss in fiber strength and improvement in fiber creep resistance.

  10. The effect of different annealing treatments on magneto-impedance in Finemet wires

    International Nuclear Information System (INIS)

    Hernando, B.; Olivera, J.; Alvarez, P.; Santos, J.D.; Sanchez, M.L.; Perez, M.J.; Sanchez, T.; Gorria, P.

    2006-01-01

    In this paper, we analyze the behaviour of Fe-rich wires that have been submitted to a current annealing, with and without an applied torsional stress. The structural relaxation and induced anisotropies achieved in the samples produce different effects in the magneto-impedance and torsion impedance response, in comparison with the as-quenched wire, due to the different domain structure and magnetization processes involved

  11. Effect of hydrogen adsorption on the formation and annealing of Stone-Wales defects in graphene

    Science.gov (United States)

    Podlivaev, A. I.; Openov, L. A.

    2015-12-01

    The heights of energy barriers preventing the formation and annealing of Stone-Wales defects in graphene with a hydrogen atom adsorbed on the defect or in its immediate vicinity have been calculated using the atomistic computer simulation. It has been shown that, in the presence of hydrogen, both barriers are significantly lower than those in the absence of hydrogen. Based on the analysis of the potential energy surface, the frequency factors have been calculated for two different paths of the Stone-Wales transformation, and the temperature dependences of the corresponding annealing times of the defects have been found. The results obtained have been compared with the first-principles calculations and molecular dynamics data.

  12. Effect of substrate properties and thermal annealing on the resistivity of molybdenum thin films

    International Nuclear Information System (INIS)

    Schmid, U.; Seidel, H.

    2005-01-01

    In this study, the influence of substrate properties (e.g. roughness characteristics and chemical composition) on the electrical resistivity of evaporated molybdenum thin films is investigated as a function of varying parameters, such as film thickness (25-115 nm) and post-deposition annealing with temperatures up to T PDA = 900 deg. C. A thermally oxidized silicon wafer with very low surface roughness was used as one substrate type. In contrast, a low temperature co-fired ceramics substrate with a glass encapsulant printed in thick film technology is the representative for rough surface morphology. The electrical resistivity follows the prediction of the size effect up to T PDA = 600 deg. C independent of substrate nature. On the silicon-based substrate, the thickness-independent portion of the film resistivity ρ g in the 'as deposited' state is about 29 times higher than the corresponding bulk value for a mono-crystalline sample. Thin films of this refractory metal on the SiO 2 /Si substrate exhibit an average grain size of 4.9 nm and a negative temperature coefficient of resistivity (TCR). On the glass/ceramic-based substrate, however, ρ g is half the value as compared to that obtained on the SiO 2 /Si substrate and the TCR is positive

  13. Effect of thermal annealing on the microstructures and photocatalytic performance of silver orthophosphate: The synergistic mechanism of Ag vacancies and metallic Ag

    International Nuclear Information System (INIS)

    Yan, Tingjiang; Guan, Wenfei; Xiao, Ying; Tian, Jun; Qiao, Zheng; Zhai, Huishan; Li, Wenjuan; You, Jinmao

    2017-01-01

    Highlights: • Ag_3PO_4 was initially prepared via ion-exchange reaction and then annealed in air. • Thermal annealing also resulted in the formation of metallic Ag and Ag vacancies. • The annealed samples exhibited superior activity to the pristine sample. • Both Ag vacancies and metallic Ag contributed to the high activity. - Abstract: In this work, a simple thermal annealing route has been developed to improve the photocatalytic performance of silver orthophosphate (Ag_3PO_4) photocatalyst toward organic pollutants degradation under visible light irradiation. The experimental results indicated that thermal treatment of Ag_3PO_4 led to an obvious lattice shift towards right and significantly narrowed band gap energies due to the formation of Ag vacancies and metallic Ag during Ag_3PO_4 decomposition. These structural variations notably affected the photocatalytic performance of Ag_3PO_4 photocatalysts. The activity of the annealed samples was found to be significantly enhanced toward the degradation of MO dye. The highest activity was observed over the sample annealed at 400 °C, which exceeded that of pristine Ag_3PO_4 by a factor of about 21 times. By means of photoluminescence spectroscopy and photoelectrochemical measurements, we propose that the enormous enhancement in activity was mainly attributed to the efficient separation of photogenerated electrons and holes driven by the synergistic effect of Ag vacancies and metallic Ag. The strong interaction between annealed particles also inhibited the dissolution of Ag"+ from Ag_3PO_4 into aqueous solution, contributing to an improved photocatalytic stability. The strategy presented here provides an ideal platform for the design of other highly efficient and stable Ag-based photocatalysts for broad applications in the field of photocatalysis.

  14. Organic products from Ca14Co3 autoradiolysis: effects of thermal annealing

    International Nuclear Information System (INIS)

    Albarran S, M.G.; Collins, K.E.; Collins, C.H.

    1986-01-01

    Autoradiolysis of Ca 14 Co 3 produces several different low molecular mass organic compounds which can be conveniently observed after ion exclusion-partition chromatographic separation of the dissolved sample, provided that the solid was prepared with high specific activity carbon-14 and has been stored for a sufficiently long period. Subsequent thermal annealing changes the distribution of these observed compounds, demonstrating that chemical reactions of the precursor species take place in the solid Ca 14 Co 3 matrix. Specifically, the following products were observed after an autoradiolytic dose of 5 MGy: methanol, formaldehyde, formic acid, oxalic acid, glyoxylic acid, glycolic acid and acetic acid, with-G-values ranging from 5x10 -6 to 2x10 -3 . Isochronal annealing to 500 0 C markedly changes the yields of carbon-14 labelled formic and acetic acids but has lesser effects on the other acidic products. This indicates that several different precursor species are present in the autoradiolyzed solid. (Author) [pt

  15. Effect of post annealing treatment on electrochromic properties of spray deposited niobium oxide thin films

    International Nuclear Information System (INIS)

    Mujawar, S.H.; Inamdar, A.I.; Betty, C.A.; Ganesan, V.; Patil, P.S.

    2007-01-01

    Niobium oxide thin films were deposited on the glass and fluorine doped tin oxide (FTO) coated glass substrates using simple and inexpensive spray pyrolysis technique. During deposition of the films various process parameters like nozzle to substrate distance, spray rate, concentration of sprayed solution were optimized to obtain well adherent and transparent films. The films prepared were further annealed and effect of post annealing on the structural, morphological, optical and electrochromic properties was studied. Structural and morphological characterizations of the films were carried out using scanning electron microscopy, atomic force microscopy and X-ray diffraction techniques. Electrochemical properties of the niobium oxide thin films were studied by using cyclic-voltammetry, chronoamperometry and chronocoulometry

  16. Effect of chemical ordering annealing on martensitic transformation and superelasticity in polycrystalline Ni–Mn–Ga microwires

    Energy Technology Data Exchange (ETDEWEB)

    Qian, M.F. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Advanced Composites Centre for Innovation and Science (ACCIS), University of Bristol, Queen’s Building, University Walk, Bristol BS8 1TR (United Kingdom); Zhang, X.X., E-mail: xxzhang@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wei, L.S.; Geng, L. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Peng, H.X., E-mail: hxpengwork@zju.edu.cn [Institute for Composites Science Innovation (InCSI), School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2015-10-05

    Highlights: • Chemical ordering annealing on Ni–Mn–Ga microwires was found to reduce the defect density and internal stress. • Chemical ordering annealing on Ni–Mn–Ga microwires was found to increase the MT temperatures, Curie point and saturation magnetization. • Chemical ordering annealing on Ni–Mn–Ga microwires was found to decrease the SIM stress and improve the superelastic reversibility. • Chemical ordering annealing on Ni–Mn–Ga microwires was found to weaken the temperature dependences of the superelastic stresses. - Abstract: Polycrystalline Ni–Mn–Ga microwires of diameter 30–80 μm were prepared by melt-extraction technique on a large scale. The rapidly solidified microwires exhibit a fairly high ductility and excellent shape memory property. Here, with the aim to reduce the defect density, internal stress and compositional inhomogeneity in the as-extracted microwires, a stepwise chemical ordering annealing heat treatment was carried out and the effect of annealing on martensitic transformation, magnetic properties and superelastic behavior were investigated. The results indicate that annealing increase the transformation temperature and decrease the transformation hysteresis. These are related to composition homogenization, increase of atomic ordering and decrease in internal stress and defects. During mechanical tests, the stress-induced martensite (SIM) formation took place at a much lower stress after annealing treatment. The annealed microwires also demonstrate a lower superelastic hysteresis and a higher recovery rate compared to the as-extracted microwires. The temperature dependence of SIM stress is weaker after annealing, which is related to the enthalpy change (ΔH) and phase transformation temperature change according to the Clausius–Clapeyron relation.

  17. The Effect of Annealing on Nanothick Indium Tin Oxide Transparent Conductive Films for Touch Sensors

    Directory of Open Access Journals (Sweden)

    Shih-Hao Chan

    2015-01-01

    Full Text Available This study aims to discuss the sheet resistance of ultrathin indium tin oxide (ITO transparent conductive films during the postannealing treatment. The thickness of the ultrathin ITO films is 20 nm. They are prepared on B270 glass substrates at room temperature by a direct-current pulsed magnetron sputtering system. Ultrathin ITO films with high sheet resistance are commonly used for touch panel applications. As the annealing temperature is increased, the structure of the ultrathin ITO film changes from amorphous to polycrystalline. The crystalline of ultrathin ITO films becomes stronger with an increase of annealing temperature, which further leads to the effect of enhanced Hall mobility. A postannealing treatment in an atmosphere can enhance the optical transmittance owing to the filling of oxygen vacancies, but the sheet resistance rises sharply. However, a higher annealing temperature, above 250°C, results in a decrease in the sheet resistance of ultrathin ITO films, because more Sn ions become an effective dopant. An optimum sheet resistance of 336 Ω/sqr was obtained for ultrathin ITO films at 400°C with an average optical transmittance of 86.8% for touch sensor applications.

  18. Effect of thermal annealing on carrier localization and efficiency of spin detection in GaAsSb epilayers grown on InP

    Science.gov (United States)

    Zhang, Bin; Chen, Cheng; Han, Junbo; Jin, Chuan; Chen, Jianxin; Wang, Xingjun

    2018-04-01

    The effect of the thermal annealing on the optical and spin properties in GaAs0.44Sb0.56 epilayers grown on InP was investigated via photoreflectance, power-dependent and time-resolved photoluminescence spectroscopy as well as optical orientation measurement. The carrier's localization and the optical spin detection efficiency increase with an increase of annealing temperature up to 600 °C. The enhancement of the spin detection efficiency is attributed to both the shortening of the electron lifetime and the prolonging of the spin lifetime as a result of the enhanced carriers' localization induced by the annealing process. Our results provided an approach to enhance spin detection efficiency of GaAsSb with its PL emission in the 1.55 μm region.

  19. Effect of Annealing Temperature on the Ballistic Limit Velocity of Ti-6A1-4V ELI

    National Research Council Canada - National Science Library

    Burkins, M

    1997-01-01

    .... Army Research Laboratory (ARL) and the RMI Titanium Company (RMI) performed a joint research program to evaluate the effect of annealing temperature on Ti-6A1-4V alloy, extra-low interstitial (ELI...

  20. Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics

    International Nuclear Information System (INIS)

    Yan Hongli; Jia Renxu; Tang Xiaoyan; Song Qingwen; Zhang Yuming

    2014-01-01

    The effect of the different re-oxidation annealing (ROA) processes on the SiO 2 /SiC interface characteristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance—voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 °C for 30 min, while a large number of effective dielectric charges are generated. The components at the SiO 2 /SiC interface are analyzed by X-ray photoelectron spectroscopy (XPS) testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process. (semiconductor technology)

  1. Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

    DEFF Research Database (Denmark)

    Xu, Zhangcheng; Leosson, Kristjan; Birkedal, Dan

    2002-01-01

    We report the effect of annealing on self-assembled InGaAs/GaAs quantum dots, as investigated by means of resonant photoluminescence (PL), resonant Raman scattering, polarization dependent PL, and high resolution X-ray diffraction....

  2. Highly Efficient Organic UV Photodetectors Based on Polyfluorene and Naphthalenediimide Blends: Effect of Thermal Annealing

    Directory of Open Access Journals (Sweden)

    Gorkem Memisoglu

    2012-01-01

    Full Text Available A solution-processed organic ultraviolet photodetector (UV-PD is introduced. The active layer of the UV-PD consists of poly(9,9-dioctyl fluorenyl-2,7–yleneethynylene (PFE and N,N′-bis-n-butyl-1,4,5,8- naphthalenediimide (BNDI with a weight ratio of 3 : 1 in chloroform. The effect of thermal annealing on the device properties was investigated from room temperature to 80∘C. The full device structure of ITO/PEDOT:PSS/PFE:BNDI (3 : 1/Al gave responsivity of 410 mA/W at −4 V under 1 mW/cm2 UV light at 368 nm when 60∘C of annealing temperature was used during its preparation. The devices that were annealed over the crystallization temperature of PFE showed a charge transfer resistance increase and a mobility decrease.

  3. Annealing and thickness effects on magnetic properties of Co2FeAl alloy films

    Science.gov (United States)

    Wang, Ke; Xu, Zhan; Ling, Fujin; Wang, Yahong; Dong, Shuo

    2018-03-01

    Co2FeAl (CFA) films in a wide thickness range between 2 and 100 nm are sputtered at room temperature. Perpendicular magnetic anisotropy (PMA) is achieved in the annealed structure of Pd/CFA/MgO with CFA thickness ranging between 2.3 and 4.9 nm. PMA as high as 2 × 106 erg/cm3 is demonstrated in the structures annealed in the temperature range between 300 and 350 °C. Positive contributions to the PMA made by the interfaces of Pd/CFA and CFA/MgO are identified. For the as-deposited structure of MgO/CFA/Ta with thick CFA alloy up to 5 nm or above a high effective saturation magnetization of 983.9 ± 30.1 emu/cc is derived from the fitting and an in-plane uniaxial magnetic anisotropy of 104 erg/cm3 in magnitude is revealed by angular dependent magnetic measurements. In addition to the increase in saturation magnetization, a fourfold cubic magnetic anisotropy is found to develop with annealing, in line with the improvement of the crystalline structure confirmed by X-ray diffraction measurements. Out results provide some useful information for the design of the CFA-based magnetoelectronic devices.

  4. Annealing effect on thermodynamic and physical properties of mesoporous silicon: A simulation and nitrogen sorption study

    Science.gov (United States)

    Kumar, Pushpendra; Huber, Patrick

    2016-04-01

    Discovery of porous silicon formation in silicon substrate in 1956 while electro-polishing crystalline Si in hydrofluoric acid (HF), has triggered large scale investigations of porous silicon formation and their changes in physical and chemical properties with thermal and chemical treatment. A nitrogen sorption study is used to investigate the effect of thermal annealing on electrochemically etched mesoporous silicon (PS). The PS was thermally annealed from 200˚C to 800˚C for 1 hr in the presence of air. It was shown that the pore diameter and porosity of PS vary with annealing temperature. The experimentally obtained adsorption / desorption isotherms show hysteresis typical for capillary condensation in porous materials. A simulation study based on Saam and Cole model was performed and compared with experimentally observed sorption isotherms to study the physics behind of hysteresis formation. We discuss the shape of the hysteresis loops in the framework of the morphology of the layers. The different behavior of adsorption and desorption of nitrogen in PS with pore diameter was discussed in terms of concave menisci formation inside the pore space, which was shown to related with the induced pressure in varying the pore diameter from 7.2 nm to 3.4 nm.

  5. Effects of annealing on the compositional heterogeneity and structure in zirconium-based bulk metallic glass thin films

    International Nuclear Information System (INIS)

    He, L.; Chu, J.P.; Li, C.-L.; Lee, C.-M.; Chen, Y.-C.; Liaw, P.K.; Voyles, P.M.

    2014-01-01

    In-situ heating fluctuation electron microscopy and scanning transmission electron microscopy have been utilized to study compositional and structural heterogeneities in Zr 51 Cu 32 Al 9 Ni 8 thin films upon annealing. Composition fluctuations are present in the as-deposited thin films. Well below the glass transition temperature, the composition fluctuations increase with annealing time. Short- and medium-range order also change with annealing temperature. The observed heterogeneities in the glass structure persist until annealing causes crystallization. The 20 nm thick Zr 51 Cu 32 Al 9 Ni 8 films contain oxide layers both at the surface and the film/substrate interface with the total thickness of 7–8 nm. In-situ annealing increased the oxygen content of the whole films to about 24 wt.% after 2 h at 400 °C. - Highlights: • Zr 51 Cu 32 Al 9 Ni 8 thin films were studied with in-situ heating electron microscopy. • Annealing at 400 °C increases the Zr and Cu compositional fluctuations. • Short-range order in Zr 51 Cu 32 Al 9 Ni 8 becomes less homogeneous above 350 °C. • Medium-range order changes in degree and types at 400 °C, well below T g . • Annealing increases composition and structure heterogeneities until crystallization

  6. Effect of preliminary annealing of silicon substrates on the spectral sensitivity of photodetectors in bipolar integrated circuits

    International Nuclear Information System (INIS)

    Blynskij, V.I.; Bozhatkin, O.A.; Golub, E.S.; Lemeshevskaya, A.M.; Shvedov, S.V.

    2010-01-01

    We examine the results of an effect of preliminary annealing on the spectral sensitivity of photodetectors in bipolar integrated circuits, formed in silicon grown by the Czochralski method. We demonstrate the possibility of substantially improving the sensitivity of photodetectors in the infrared region of the spectrum with twostep annealing. The observed effect is explained by participation of oxidation in the gettering process, where oxidation precedes formation of a buried n + layer in the substrate. (authors)

  7. Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

    International Nuclear Information System (INIS)

    Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

    2015-01-01

    The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

  8. Annealing effects on structure and mechanical properties of CoCrFeNiTiAlx high-entropy alloys

    International Nuclear Information System (INIS)

    Zhang, K B; Fu, Z Y; Zhang, J Y; Wang, W M; Lee, S W; Niihara, K

    2011-01-01

    Novel CoCrFeNiTiAl x (x:molar ratio, other elements are equimolar) high-entropy alloys were prepared by vacuum arc melting and these alloys were subsequently annealed at 1000 deg. C for 2 h. The annealing effects on structure and mechanical properties were investigated. Compared with the as-cast alloys, there are many complex intermetallic phases precipitated from the solid solution matrix in the as-annealed alloys with Al content lower than Al 1.0 . Only simple BCC solid solution structure appears in the as-annealed Al 1.5 and Al 2.0 alloys. This kind of alloys exhibit high resistance to anneal softening. Most as-annealed alloys possess even higher Visker hardness than the as-cast ones. The as-annealed Al 0.5 alloys shows the highest compressive strength while the Al 0 alloy exhibits the best ductility, which is about 2.6 GPa and 13%, respectively. The CoCrFeNiTiAl x high-entropy alloys possess integrated high temperature mechanical property as well.

  9. Annealing effects in plated-wire memory elements. I - Interdiffusion of copper and Permalloy.

    Science.gov (United States)

    Knudson, C. I.; Kench, J. R.

    1971-01-01

    Results of investigations using X-ray diffraction and electron-beam microprobe techniques have shown that copper and Permalloy platings interdiffuse at low temperatures when plated-wire memory elements are annealed for times as short as 50 hr. Measurable interdiffusion between Permalloy platings and gold substrates does not occur in similar conditions. Both magnetic and compositional changes during aging are found to occur by a thermally activated process with activation energies around 38 kcal/mol. It is shown, however, that copper-diffusion and magnetic-dispersion changes during aging are merely concurrent processes, neither being the other's cause.

  10. Dependence of defect introduction on temperature and resistivity and some long-term annealing effects

    Science.gov (United States)

    Brucker, G. J.

    1971-01-01

    The effort reported here represents data of lithium properties in bulk-silicon samples before and after irradiation for analytical information required to characterize the interactions of lithium with radiation-induced defects in silicon. A model of the damage and recovery mechanisms in irradiated-lithium-containing solar cells is developed based on making measurements of the Hall coefficient and resistivity of samples irradiated by 1-MeV electrons. Experiments on bulk samples included Hall coefficient and resistivity measurements taken as a function of: (1) bombardment temperature, (2) resistivity, (3) fluence, (4) oxygen concentration, and (5) annealing time at temperatures from 300 to 373 K.

  11. Microstructure evolution and large magnetocaloric effect of La0.8Ce0.2(Fe0.95Co0.05)11.8Si1.2 alloy prepared by strip-casting and annealing

    Science.gov (United States)

    Zhong, X. C.; Feng, X. L.; Huang, J. H.; Zhang, H.; Huang, Y. L.; Liu, Z. W.; Jiao, D. L.

    2018-04-01

    The microstructure and magnetocaloric effect of the La0.8Ce0.2(Fe0.95Co0.05)11.8Si1.2 strip-cast flakes annealed between 1273K and 1423K for different time have been investigated. For the flakes annealed for 2h from 1273K to 1423K, the shape and distribution of α-Fe, La-rich and NaZn13-type 1:13 phases are quite sensitive to the annealing temperature. Especially, at a high annealing temperature of 1423K, the 1:13 phase began to decompose into macroscopic α-Fe conglomerations and La-rich dendrites. With the increase of annealing time from 0 to 12h at 1323K, the amount of 1:13 phase increased significantly and reached ˜93.50 wt.% at 12h. However, an overlong annealing time also led to 1:13 phase decomposition and influenced the magnetic performance. For the flakes annealed at 1323K for 12h, large magnetic entropy change value of 18.12Jkg-1K-1 at 5T has been obtained. The present results indicate that strip casting method can potentially be used in mass production of high performance magnetocaloric materials.

  12. Neutron flux and annealing effects on irradiation hardening of RPV materials

    Science.gov (United States)

    Chaouadi, R.; Gérard, R.

    2011-11-01

    This paper aims to examine an eventual effect of neutron flux, sometimes referred to as dose rate effect, on irradiation hardening of a typical A533B reactor pressure vessel steel. Tensile tests on both low flux (reactor surveillance data) and high flux (BR2 reactor) were performed in a large fluence range. The obtained results indicate two features. First, the surveillance data exhibit a constant (˜90 MPa) higher yield strength than the high flux data. However, this difference cannot be explained from a flux effect but most probably from differences in the initial tensile properties. The hardening kinetic of both low and high flux is the same. Annealing at low temperature, 345 °C/40 h, to eventually reveal unstable matrix damage did not affect both BR2 and surveillance specimens. This is confirmed by other annealing experimental data including both tensile and hardness measurements and tensile data on A508 forging and weld. It is suggested that the absence of flux effect on the tensile properties while different radiation-induced microstructures can be attributed to thermal ageing effects.

  13. Estimation of effective temperatures in a quantum annealer: Towards deep learning applications

    Science.gov (United States)

    Realpe-Gómez, John; Benedetti, Marcello; Perdomo-Ortiz, Alejandro

    Sampling is at the core of deep learning and more general machine learning applications; an increase in its efficiency would have a significant impact across several domains. Recently, quantum annealers have been proposed as a potential candidate to speed up these tasks, but several limitations still bar them from being used effectively. One of the main limitations, and the focus of this work, is that using the device's experimentally accessible temperature as a reference for sampling purposes leads to very poor correlation with the Boltzmann distribution it is programmed to sample from. Based on quantum dynamical arguments, one can expect that if the device indeed happens to be sampling from a Boltzmann-like distribution, it will correspond to one with an instance-dependent effective temperature. Unless this unknown temperature can be unveiled, it might not be possible to effectively use a quantum annealer for Boltzmann sampling processes. In this work, we propose a strategy to overcome this challenge with a simple effective-temperature estimation algorithm. We provide a systematic study assessing the impact of the effective temperatures in the quantum-assisted training of Boltzmann machines, which can serve as a building block for deep learning architectures. This work was supported by NASA Ames Research Center.

  14. The role of annealing: effect on CaSO4:Dy phosphor with manganese and sodium impurities

    International Nuclear Information System (INIS)

    Li, S.-H.; Hsu, P.-C.

    1990-01-01

    The effect of the annealing treatment on the CaSO 4 :Dy phosphor with Mn and Na impurities was studied at different annealing temperatures from 100 0 C to 800 0 C. Doping with or without impurity caused no difference in the properties for temperatures less than 400 0 C. An annealing temperature greater than 400 0 C brings a reduction in low temperature peak intensities of CaSO 4 :Dy with Na only. The high temperature peak intensities increase as the temperature increases from 400 0 C to 600 0 C. However, annealing at a temperature greater than 600 0 C brings a drastic reduction in high temperature peak intensities as well as TL output. (author)

  15. Annealing effect reversal by water sorption-desorption and heating above the glass transition temperature-comparison of properties.

    Science.gov (United States)

    Saxena, A; Jean, Y C; Suryanarayanan, R

    2013-08-05

    Our objective is to compare the physical properties of materials obtained from two different methods of annealing reversal, that is, water sorption-desorption (WSD) and heating above glass transition temperature (HAT). Trehalose was annealed by storing at 100 °C for 120 h. The annealing effect was reversed either by WSD or HAT, and the resulting materials were characterized by differential scanning calorimetry (DSC), water sorption studies, and positron annihilation spectroscopy (PAS). While the products obtained by the two methods of annealing reversal appeared to be identical by conventional characterization methods, they exhibited pronounced differences in their water sorption behavior. Positron annihilation spectroscopy (PAS), by measuring the fractional free volume changes in the processed samples, provided a mechanistic explanation for the differences in the observed behavior.

  16. Effects of post-growth annealing on InGaAs quantum posts embedded in Schottky diodes

    International Nuclear Information System (INIS)

    Schramm, A; Polojärvi, V; Hakkarainen, T V; Tukiainen, A; Guina, M

    2011-01-01

    We study effects of rapid thermal annealing on photoluminescence and electron confinement of InGaAs quantum posts by means of photoluminescence experiments and capacitance–voltage spectroscopy. The quantum posts are embedded in n-type Schottky diodes grown by molecular beam epitaxy on GaAs(1 0 0). The observed photoluminescence spectra arise from the quantum posts as well as from a contribution of a wetting-layer superlattice. With increasing annealing temperatures, the quantum-post photoluminescence blueshifts toward the wetting-layer superlattice, and upon the highest annealing step, the wetting-layer superlattice luminescence dominates. In capacitance–voltage experiments, we clearly observe a charge accumulation in the quantum-post layer as well as from the wetting-layer superlattice. Capacitance–voltage spectra and carrier-density profiles only experience slight changes upon annealing treatments. We suggest that the main electron accumulation takes place in the wetting-layer superlattice

  17. CoFe Layers Thickness and Annealing Effect on the Magnetic Behavior of the CoFe/Cu Multilayer Nanowires

    Directory of Open Access Journals (Sweden)

    M. Ahmadzadeh

    2015-04-01

    Full Text Available CoFe/Cu multilayer nanowires were electrodeposited into anodic aluminum oxide templates prepared by a two-step mild anodization method, using the single-bath technique. Nanowires with 30 nm diameter and the definite lengths were obtained. The effect of CoFe layers thickness and annealing on the magnetic behavior of the multilayer nanowires was investigated. The layers thickness was controlled through the pulses numbers: 200, 260, 310,360 and 410 pulses were used to deposit the CoFe layers, while 300 pulse for the Cu layers. A certain increase in coercivity and squareness of CoFe/Cu multilayer nanowires observed with increasing the CoFe layer thickness and annealing improved the coercivity and decrease squareness of CoFe/Cu multilayer nanowires. First order reversal curves after annealed showed amount domains with soft magnetic phase, it also shows decreasing spreading of distribution function along the Hu axis after annealed

  18. The effect of annealing unimplanted and krypton implanted uranium dioxide using positrons

    International Nuclear Information System (INIS)

    Evans, H.E.; Rice-Evans, P.; Smith, D.L.; Smith, C.; Evans, J.H.

    1992-01-01

    Previous studies examining the response of variable energy positrons to metals implanted with krypton ions have been extended to UO 2 . The behaviour of two Kr-implanted samples (one implanted at 300 K, the other at 870 K) during annealing up to 1350 K has been followed, together with an unimplanted, as-polished sample. There are several features of interest in the results although in these initial studies the interpretation is not always clear. Defect recovery and krypton effects can be identified but at high temperatures some suggestion of a sensitivity of positrons to stoichiometry is present

  19. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    International Nuclear Information System (INIS)

    Schwarze, G.E.; Frasca, A.J.

    1994-01-01

    The effects of neutrons and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10 13 n/cm 2 and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are given in this paper. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed

  20. Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

    Science.gov (United States)

    Schwarze, G. E.; Frasca, A. J.

    1991-01-01

    The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

  1. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.

    Science.gov (United States)

    Park, Soyeon; Bang, Seokhwan; Lee, Seungjun; Park, Joohyun; Ko, Youngbin; Jeon, Hyeongtag

    2011-07-01

    In this study, the effects of different annealing conditions (air, O2, N2, vacuum) on the chemical and electrical characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFT) were investigated. The contact resistance and interface properties between the IGZO film and the gate dielectric improved after an annealing treatment. However, the chemical bonds in the IGZO bulk changed under various annealing atmospheres, which, in turn, altered the characteristics of the TFTs. The TFTs annealed in vacuum and N2 ambients exhibited undesired switching properties due to the high carrier concentration (>10(17) cm(-3)) of the IGZO active layer. In contrast, the IGZO TFTs annealed in air and oxygen ambients displayed clear transfer characteristics due to an adequately adjusted carrier concentration in the operating range of the TFT. Such an optimal carrier concentration arose through the stabilization of unstable chemical bonds in the IGZO film. With regard to device performance, the TFTs annealed in O2 and air exhibited saturation mobility values of 8.29 and 7.54 cm2/Vs, on-off ratios of 7.34 x 10(8) and 3.95 x 10(8), and subthreshold swing (SS) values of 0.23 and 0.19 V/decade, respectively. Therefore, proper annealing ambients contributed to internal modifications in the IGZO structure and led to an enhancement in the oxidation state of the metal. As a result, defects such as oxygen vacancies were eliminated. Oxygen annealing is thus effective for controlling the carrier concentration of the active layer, decreasing electron traps, and enhancing TFT performance.

  2. Development of Bake Hardening Effect by Plastic Deformation and Annealing Conditions

    Directory of Open Access Journals (Sweden)

    Kvačkaj, T.

    2006-01-01

    Full Text Available The paper deals with the classification of steel sheets for automotives industry on the basis of strength and structural characteristics. Experimental works were aimed to obtain the best possible strengthening parameters as well as work hardening and solid solution ferrite hardening, which are the result of thermal activation of interstitial carbon atoms during paint-baking of auto body. Hardening process coming from interstitial atoms is realized as two-step process. The first step is BH (bake hardening effect achieved by interaction of interstitial atoms with dislocations. The Cottrels atmosphere is obtained. The second step of BH effect is to produced the hardening from precipitation of the carbon atoms in e-carbides, or formation of Fe32C4 carbides. WH (work hardening effect is obtained as dislocation hardening from plastic deformations during sheet deep drawing. Experimental works were aimed at as to achieve such plastic material properties after cold rolling, annealing and skin-pass rolling, which would be able to classify the material ZStE220BH into the drawing categories at the level of DQ – DDQ. As resulting from the experimental results, the optimal treatment conditions for the maximal sum (WH+BH = 86 MPa are as follows: total cold rolling deformation ecold = 65 %, annealing temperature Tanneal. = 700 °C.

  3. The Effects of Annealing Temperatures on Composition and Strain in Si x Ge1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100).

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-02-24

    The effects of annealing temperatures on composition and strain in Si x Ge 1- x , obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm -1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of Si x Ge 1- x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  4. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-01-01

    The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100°C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~00 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance. PMID:28788521

  5. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100

    Directory of Open Access Journals (Sweden)

    Mastura Shafinaz Zainal Abidin

    2014-02-01

    Full Text Available The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100 substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100 orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  6. Effects of annealing temperature on mechanical durability of indium-tin oxide film on polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Machinaga, Hironobu; Ueda, Eri; Mizuike, Atsuko; Takeda, Yuuki; Shimokita, Keisuke; Miyazaki, Tsukasa

    2014-01-01

    Effects of the annealing temperature on mechanical durability of indium-tin oxide (ITO) thin films deposited on polyethylene terephthalate (PET) substrates were investigated. The ITO films were annealed at the range from 150 °C to 195 °C after the DC sputtering deposition for the production of polycrystalline ITO layers on the substrates. The onset strains of cracking in the annealed ITO films were evaluated by the uniaxial stretching tests with electrical resistance measurements during film stretching. The results indicate that the onset strain of cracking in the ITO film is clearly increased by increasing the annealing temperature. The in-situ measurements of the inter-planer spacing of the (222) plane in the crystalline ITO films during film stretching by using synchrotron radiation strongly suggest that the large compressive stress in the ITO film increases the onset strain of cracking in the film. X-ray stress analyses of the annealed ITO films and thermal mechanical analyses of the PET substrates also clarifies that the residual compressive stress in the ITO film is enhanced with increasing the annealing temperature due to the considerably larger shrinkage of the PET substrate. - Highlights: • Indium-tin oxide (ITO) films were deposited on polyethylene terephthalate (PET). • Mechanical durability of the ITO is improved by high temperature post-annealing. • The shrinkage in the PET increases with rising the post-annealing temperature. • The shrinkage of the PET enhances the compressive stress in the ITO film. • Large compressive stress in the ITO film may improve its mechanical durability

  7. Effect of germanium doping on the annealing characteristics of oxygen and carbon-related defects in Czochralski silicon

    International Nuclear Information System (INIS)

    Londos, C. A.; Andrianakis, A.; Sgourou, E. N.; Emtsev, V.; Ohyama, H.

    2010-01-01

    This paper is devoted to the annealing studies of defects produced in carbon-rich Ge-doped Czochralski-grown Si (Cz-Si) by 2 MeV electron irradiation. The annealing temperature of vacancy-oxygen (VO) complexes, carbon interstitial-oxygen interstitial (C i O i ), and carbon interstitial-carbon substitutional (C i C s ) pairs as well as the formation temperature of vacancy-two oxygen (VO 2 ) complexes are monitored as a function of Ge concentration. It has been established that the annealing of C i O i and C i C s defects remains practically unaffected by the Ge presence, whereas the annealing temperature of VO defects and the formation temperature of VO 2 complexes are substantially lowered at Ge concentrations larger than 1x10 19 cm -3 . The hydrostatic component of elastic strains introduced by Ge atoms in the Si crystal lattice was calculated. It appears to be very small, at least insufficient to exert a pronounced effect upon the annealing behavior of radiation-produced defects. This conclusion is in line with what is observed for the C i O i and C i C s species. In the case of VO, whose annealing process in Cz-Si is concurrently conducted by two reaction paths VO+O i →VO 2 and VO+Si I →O i , we suggest that the latter reaction in Ge-doped Cz-Si is enhanced by emitting self-interstitials (Si I ) from loosely bound self-interstitial clusters predominantly formed around Ge impurity atoms. As a result, the liberation of self-interstitials at lower annealing temperatures leads to an enhanced annealing of VO defects. An enhanced formation of VO 2 complexes at lower temperatures is also discussed in terms of other reactions running in parallel with the reaction VO+Si I →O i .

  8. The effect of annealing temperature on the optical properties of a ruthenium complex thin film

    Energy Technology Data Exchange (ETDEWEB)

    Ocakoglu, Kasim, E-mail: kasim.ocakoglu@mersin.edu.tr [Advanced Technology Research & Application Center, Mersin University, TR-33343, Yenisehir, Mersin (Turkey); Department of Energy Systems Engineering, Faculty of Technology, Mersin University, TR-33480 Mersin (Turkey); Okur, Salih, E-mail: salih.okur@ikc.edu.tr [Department of Materials Science and Engineering, Faculty of Engineering and Architecture, Izmir Katip Celebi University, Izmir (Turkey); Aydin, Hasan [Izmir Institute of Technology, Department of Material Science and Engineering, Gulbahce Campus, 35430, Urla, Izmir (Turkey); Emen, Fatih Mehmet [Faculty of Arts and Sciences, Department of Chemistry, Mehmet Akif Ersoy University, TR-15030 Burdur (Turkey)

    2016-08-01

    The stability of the optical parameters of a ruthenium polypyridyl complex (Ru-PC K314) film under varying annealing temperatures between 278 K and 673 K was investigated. The ruthenium polypyridyl complex thin film was prepared on a quartz substrate by drop casting technique. The transmission of the film was recorded by using Ultraviolet/Visible/Near Infrared spectrophotometer and the optical band gap energy of the as-deposited film was determined around 2.20 eV. The optical parameters such as refractive index, extinction coefficient, and dielectric constant of the film were determined and the annealing effect on these parameters was investigated. The results show that Ru PC K314 film is quite stable up to 595 K, and the rate of the optical band gap energy change was found to be 5.23 × 10{sup −5} eV/K. Furthermore, the thermal analysis studies were carried out in the range 298–673 K. The Differential Thermal Analysis/Thermal Gravimmetry/Differantial Thermal Gravimmetry curves show that the decomposition is incomplete in the temperature range 298–673 K. Ru-PC K314 is thermally stable up to 387 K. The decomposition starts at 387 K with elimination of functional groups such as CO{sub 2}, CO molecules and SO{sub 3}H group was eliminated between 614 K and 666 K. - Highlights: • Optical parameters of a ruthenium polypyridyl complex film under varying annealing temperatures • The film is quite stable up to 573 K. • The rate of change of optical energy gap was obtained as 5.23 × 10{sup −5} eV/K.

  9. Effect of annealing temperature and dopant concentration on the thermoluminescence sensitivity in LiF:Mg,Cu,Ag material.

    Science.gov (United States)

    Yahyaabadi, Akram; Torkzadeh, Falamarz; Rezaei Ochbelagh, Dariush; Hosseini Pooya, Seyed Mahdi

    2018-04-24

    LiF:Mg,Cu,Ag is a new dosimetry material that is similar to LiF:Mg,Cu,P in terms of dosimetric properties. The effect of the annealing temperature in the range of 200 to 350°C on the thermoluminescence (TL) sensitivity and the glow curve structure of this material at different concentrations of silver (Ag) was investigated. It has been demonstrated that the optimum values of the annealing temperature and the Ag concentration are 240°C and 0.1 mol% for better sensitivity, respectively. The TL intensity decreases at annealing temperatures lower than 240°C or higher than 240°C, reaching a minimum at 300°C and then again increases for various Ag concentrations. It was observed that the glow curve structure altered and the area under the low temperature peak as well as the area under the main dosimetric peak decreased with increasing annealing temperature. The position of the main dosimetric peak moved in the direction of higher temperatures, but at 320 and 350°C annealing temperatures, it shifted to lower temperatures. It was also observed that the TL sensitivity could partially be recovered by a combined annealing procedure. Copyright © 2018 John Wiley & Sons, Ltd.

  10. Effect of annealing temperatures on the morphology and structural properties of PVDF/MgO nanocomposites thin films

    Science.gov (United States)

    Rozana, M. D.; Arshad, A. N.; Wahid, M. H. M.; Habibah, Z.; Sarip, M. N.; Rusop, M.

    2018-05-01

    This study investigates the effect of annealing on the topography, morphology and crystal phases of poly(vinylideneflouride)/Magnesium Oxide (MgO) nanocomposites thin films via AFM, FESEM and ATR-FTIR. The nanocomposites thin films were annealed at temperatures ranging from 70°C to 170°C. The annealed PVDF/MgO nanocomposites thin films were then cooled at room temperature before removal from the oven. This is to restructure the crystal lattice and to reduce imperfection for the PVDF/MgO nanocomposites thin films. PVDF/MgO nanocomposites thin films with annealing temperatures of 70°C, 90°C and 110°C showed uniform distribution of MgO nanoparticles, relatively low average surface roughness and no visible of defects. High application of annealing temperature on PVDF/MgO nanocomposites thin films caused tear-like defects on the thin films surface as observed by FESEM. The PVDF/MgO nanocomposites thin films annealed at 70°C was found to be a favourable film to be utilized in this study due to its enhanced β-crystalites of PVDF as evident in ATR-FTIR spectra.

  11. Effect of annealing on structural and luminescence properties of Eu3+ doped NaYF4 phosphor

    Science.gov (United States)

    Pathak, Trilok K.; Kumar, Ashwini; Swart, H. C.; Kroon, R. E.

    2018-04-01

    Eu3+ doped NaYF4 phosphors have been synthesized by the combustion method. The effect of annealing on the structural, morphological and luminescence properties has been investigated. X-ray diffraction analysis revealed that the Eu3+ doped NaYF4 phosphors consisted of mixed phases: α-phase and β-phase which were affected by the annealing of the phosphor. The surface morphology showed a significant change with annealing in the Eu3+ doped NaYF4 phosphors. The elemental mapping and energy dispersive X-ray spectroscopy spectra proved the formation of the desired materials. The photoluminescence spectra illustrated the optical properties of Eu3+ in the as-prepared and annealed Eu3+ doped NaYF4 phosphors. The intensity of the peaks 5D0 → 7F2 and 5D0 → 7F1 varied in as-prepared and annealed samples. The lifetime of the Eu3+ luminescence at 615 nm was also weakly affected by the Eu3+ doping and annealing temperature.

  12. Effects of thermal annealing on C/FePt granular multilayers: in situ and ex situ studies

    International Nuclear Information System (INIS)

    Babonneau, D; Abadias, G; Toudert, J; Girardeau, T; Fonda, E; Micha, J S; Petroff, F

    2008-01-01

    The comprehensive study of C/FePt granular multilayers prepared by ion-beam sputtering at room temperature and subsequent annealing is reported. The as-deposited multilayers consist of carbon-encapsulated FePt nanoparticles (average size ∼3 nm) with a disordered face-centered-cubic structure. The effects of thermal annealing on the structural and magnetic properties are investigated by using dedicated ex situ and in situ techniques, including high-resolution transmission electron microscopy, extended x-ray absorption fine structure, magnetometry, and coupled grazing incidence small-angle x-ray scattering and x-ray diffraction. Our structural data show that the particle size and interparticle distance increase slightly with annealing at temperatures below 790 K by thermally activated migration of Fe and Pt atoms. We find that thermal annealing at temperatures above 870 K results in the dramatic growth of the FePt nanoparticles by coalescence and their gradual L1 0 ordering. In addition, we observe a preferential graphitization of the carbon matrix, which provides protection against oxidation for the FePt nanoparticles. Magnetization measurements indicate that progressive magnetic hardening occurs after annealing. The dependences of the blocking temperature, saturation magnetization, coercivity, and magnetocrystalline anisotropy energy on the annealing temperature are discussed on the basis of the structural data

  13. Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors

    International Nuclear Information System (INIS)

    Jeong, S.-W.; Lee, H.J.; Kim, K.S.; You, M.T.; Roh, Y.; Noguchi, T.; Xianyu, W.; Jung, J.

    2006-01-01

    We have investigated the annealing effects of HfO 2 films deposited by an atomic layer deposition (ALD) method on the electrical and physical properties in the Si/SiO 2 /Pt/ALD-HfO 2 /Pd metal-insulator-metal (MIM) capacitors. If the annealing temperature for HfO 2 films was restricted below 500 deg. C, an annealing step using a rapid thermal processor (RTP) improves the electrical properties such as the dissipation factor and the dielectric constant. On the other hand, annealing at 700 deg. C degrades the electrical characteristics in general; the dissipation factor increases over the frequency range of 1∼4 MHz, and the leakage current increases up to 2 orders at the low electric field regions. We found that the degradation of electrical properties is due to the grain growth in the HfO 2 film (i.e., poly-crystallization of the film) by the high temperature annealing processing. We suggested that the annealing temperature must be restricted below 500 deg. C to obtain the high quality high-k film for the MIM capacitors

  14. Effect of annealing temperature on the tribological behavior of ZnO films prepared by sol-gel method

    International Nuclear Information System (INIS)

    Lin Liyu; Kim, Dae-Eun

    2009-01-01

    The tribological behavior of zinc oxide (ZnO) films grown on glass and silicon (100) substrates by sol-gel method was investigated. Particularly, the as-coated films were post-annealed at different temperatures in air to investigate the effect of annealing temperature. Crystal structural and surface morphology of the films were measured by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). XRD patterns and AFM images indicated that the crystallinity and grain size of the films were enhanced and increased, respectively, with temperature. The tribological behavior of films was evaluated by sliding the ZnO films against a Si 3 N 4 ball under 0.5 gf normal load using a reciprocating pin-on-plate tribo-tester. The wear tracks of the films were measured by AFM to quantify the wear resistance of the films. The results showed that the wear resistance of the films could be improved by the annealing process. The wear resistance of the films generally increased with annealing temperature. Specifically, the wear resistance of the films was significantly improved when the annealing temperature was higher than 550 deg. C. The increase in the wear resistance is attributed to the increase in hardness and modulus of the film with annealing temperature

  15. Effect of deformation and annealing on mechanical properties of nickel-rhenium alloys

    International Nuclear Information System (INIS)

    Mashkova, V.M.

    1978-01-01

    Studied have been the mechanical properties of nickel-rhenium alloys, depending on the extent of deformation and heat treatment leading to softening. The mechanical properties of the alloys have been estimated by the results of the tensile tests of wire samples. The softening of the alloy at different temperatures is judged about by the variation in hardness. The results of the study indicate that the most abrupt reduction in the hardness of the cold-hardened metal occurs at 900-1,000 deg C and the hold-time of 1 min. Increase in the hold-time at such temperature almost does not reduce the hardness. It is established that in order to soften nickel-rhenium alloys in the process of the cold-deformation at brief annealings in the air the hold-time should not exceed 5 min at 800-900 deg C

  16. Evolution of Self-Assembled Au NPs by Controlling Annealing Temperature and Dwelling Time on Sapphire (0001).

    Science.gov (United States)

    Lee, Jihoon; Pandey, Puran; Sui, Mao; Li, Ming-Yu; Zhang, Quanzhen; Kunwar, Sundar

    2015-12-01

    Au nanoparticles (NPs) have been utilized in a wide range of device applications as well as catalysts for the fabrication of nanopores and nanowires, in which the performance of the associated devices and morphology of nanopores and nanowires are strongly dependent on the size, density, and configuration of the Au NPs. In this paper, the evolution of the self-assembled Au nanostructures and NPs on sapphire (0001) is systematically investigated with the variation of annealing temperature (AT) and dwelling time (DT). At the low-temperature range between 300 and 600 °C, three distinct regimes of the Au nanostructure configuration are observed, i.e., the vermiform-like Au piles, irregular Au nano-mounds, and Au islands. Subsequently, being provided with relatively high thermal energy between 700 and 900 °C, the round dome-shaped Au NPs are fabricated based on the Volmer-Weber growth model. With the increased AT, the size of the Au NPs is gradually increased due to a more favorable surface diffusion while the density is gradually decreased as a compensation. On the other hand, with the increased DT, the size and density of Au NPs decrease due to the evaporation of Au at relatively high annealing temperature at 950 °C.

  17. Effects of annealing and pulse plating on soft magnetic properties of electroplated Fe-Ni films

    Directory of Open Access Journals (Sweden)

    T. Yanai

    2016-05-01

    Full Text Available We have already reported that Fe-Ni films prepared in citric-acid-based plating baths show good soft magnetic properties. In this paper, we investigated the effect of the grain size of the Fe-Ni crystalline phase in the films on magnetic properties, and employed an annealing and a pulse plating method in order to vary the grain size. The coercivity of the annealed Fe-Ni films at 600 °C shows large value, and good correlation between the grain growth and the coercivity was observed. The pulse plating enables us to reduce the grain size of the as-plated Fe-Ni films compared with the DC plating method, and we realized smooth surface and low coercivity of the Fe-Ni films using the pulse plating method. From these results, we confirmed the importance of the reduction in the grain size, and concluded that a pulse plating is an effective method to improve the good soft magnetic properties for our previously-reported Fe-Ni films.

  18. Effect of annealing over optoelectronic properties of graphene based transparent electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Shriniwas, E-mail: sniwas89@gmail.com; Kaur, Inderpreet, E-mail: inderpreety@yahoo.co.in [Academy of Scientific and Innovative Research- Central Scientific Instruments Organisation (AcSIR-CSIO), Sector-30C, Chandigarh (India); Council of Scientific and Industrial Research- Central Scientific Instruments Organisation (CSIR-CSIO), Sector-30C, Chandigarh (India)

    2016-04-13

    Graphene, an atom–thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σ{sub dc}/σ{sub opt}) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

  19. Effect of low temperature annealing on magneto-caloric effect of Ni–Mn–Sn–Al ferromagnetic shape memory alloy

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, Sandeep [Haldia Institute of Technology, Haldia 721657, West Bengal (India); LCMP, Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences, JD Block, Salt Lake, Kolkata 700098 (India); Stern-Taulats, Enric; Mañosa, Lluís [Departament d’Estructura i Constituents de la Matèria, Facultat de Física, Universitat de Barcelona, 08028 Barcelona, Catalonia (Spain); Mukhopadhyay, P.K., E-mail: pkm@bose.res.in [LCMP, Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences, JD Block, Salt Lake, Kolkata 700098 (India)

    2015-08-25

    Highlights: • Magnetic properties of the system changed after secondary heat treatment. • MCE was enhanced after Al was partially replaced with Sn in Ni–Mn–Al system. • Suitable heat treatment further increased overall MCE in the sample. • Change in magnetic properties occurred due to change in atomic ordering. - Abstract: We studied the effect of low temperature annealing on the atomic ordering and consequent changes in the magnetization and magnetocaloric effect of the sample. The annealing at lower temperatures initially decreased the magnetization and magnetocaloric effect in the sample, but at higher annealing temperatures both increased. The changes in magnetization and magnetocaloric effect arise from the change in atomic ordering. We have shown that post quenching heat treatment offers easy way of optimizing the alloy for magnetocaloric effect. In order to verify that there was no overestimation in the measurement of magnetocaloric effect we also performed an infield calorimetric measurements and compared them with those from the magnetization measurements. We did not find remarkable difference between them.

  20. Effects of thermal annealing on the radiation produced electron paramagnetic resonance spectra of bovine and equine tooth enamel: Fossil and modern

    Science.gov (United States)

    Weeks, Robert A.; Bogard, James S.; Elam, J. Michael; Weinand, Daniel C.; Kramer, Andrew

    2003-06-01

    The concentration of stable radiation-induced paramagnetic states in fossil teeth can be used as a measure of sample age. Temperature excursions >100 °C, however, can cause the paramagnetic state clock to differ from the actual postmortem time. We have heated irradiated enamel from both fossilized bovid and modern equine (MEQ) teeth for 30 min in 50 °C increments from 100 to 300 °C, measuring the electron paramagnetic resonance (EPR) spectrum after each anneal, to investigate such effects. Samples were irradiated again after the last anneal, with doses of 300-1200 Gy from 60Co photons, and measured. Two unirradiated MEQ samples were also annealed for 30 min at 300 °C, one in an evacuated EPR tube and the other in a tube open to the atmosphere, and subsequently irradiated. The data showed that hyperfine components attributed to the alanine radical were not detected in the irradiated MEQ sample until after the anneals. The spectrum of the MEQ sample heated in air and then irradiated was similar to that of the heat treated fossil sample. We conclude that the hyperfine components are due to sample heating to temperatures/times >100 °C/30 min and that similarities between fossil and MEQ spectra after the 300 °C/30 min MEQ anneal are also due to sample heating. We conclude that the presence of the hyperfine components in spectra of fossil tooth enamel indicate that such thermal events occurred either at the time of death, or during the postmortem history.

  1. Effects of post-stress hydrogen annealing on MOS oxides after 60Co irradiation or Fowler-Nordheim injection

    International Nuclear Information System (INIS)

    Saks, N.S.; Stahlbush, R.E.; Mrstik, B.J.; Rendell, R.W.; Klein, R.B.

    1993-01-01

    Changes in interface trap density D it have been determined in MOSFETs as a function of time during hydrogen annealing at 295K. Large increases in D it are observed during H 2 annealing in MOSFETs previously stressed by either 60 Co irradiation or Fowler-Nordheim electron injection. The annealing behavior is very similar for both types of stress, which suggests that the D it creation mechanism involves similar chemistry for hydrogen reactions. Studies of the time dependence of D it creation as a function of MOSFET gate length show that the time dependence is limited primarily by lateral diffusion of molecular hydrogen (H 2 ) through the gate oxide. An activation energy of 0.57 eV, which is consistent with H 2 diffusion, is obtained from the temperature dependence

  2. Preparation and Thermal Characterization of Annealed Gold Coated Porous Silicon

    Directory of Open Access Journals (Sweden)

    Afarin Bahrami

    2012-01-01

    Full Text Available Porous silicon (PSi layers were formed on a p-type Si wafer. Six samples were anodised electrically with a 30 mA/cm2 fixed current density for different etching times. The samples were coated with a 50–60 nm gold layer and annealed at different temperatures under Ar flow. The morphology of the layers, before and after annealing, formed by this method was investigated by scanning electron microscopy (SEM. Photoacoustic spectroscopy (PAS measurements were carried out to measure the thermal diffusivity (TD of the PSi and Au/PSi samples. For the Au/PSi samples, the thermal diffusivity was measured before and after annealing to study the effect of annealing. Also to study the aging effect, a comparison was made between freshly annealed samples and samples 30 days after annealing.

  3. Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Haochun; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hiramatsu, Hidenori [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Ueda, Shigenori [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Ohashi, Naoki [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Kamiya, Toshio, E-mail: tkamiya@msl.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2016-09-01

    We investigated the effects of thermal annealing for high-density subgap states in amorphous In–Ga–Zn–O (a-IGZO) films by focusing on low-quality defective films deposited without O{sub 2} supply (LQ films). It was found that most of the subgap states were thermally unstable and decreased dramatically by annealing at ≤ 400 °C in O{sub 2}. These defects (but with different shapes) were further reduced by 600 °C annealing, whose subgap states appeared similar to that of a-IGZO films deposited at an optimum condition (high quality, HQ films) and annealed at 300 °C. However, electron Hall mobilities and field-effect mobilities of their thin-film transistors (TFTs) were low for the LQ films/TFTs even annealed at 600 °C compared to those for the HQ films/TFTs. It implies that not only the subgap states but also heavier structural disorder deteriorated the electron transport in the LQ films. The present results also suggest that although a-IGZO deposition without O{sub 2} supply is sometimes employed in particular for DC sputtering, supplying some O{sub 2} gas would be better to produce good TFTs at lower temperatures. - Highlights: • Effects of thermal annealing on subgap states in a-In–Ga–Zn–O films were studied. • Hard X-ray photoemission spectroscopy was employed. • Low-quality films require annealing at 600 °C to make an operating transistor. • This temperature is much higher than those for high-quality films (300–400 °C). • The high temperature is required because some subgap states are very stable.

  4. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2014-12-08

    We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm{sup 2}/V s to 17.9 cm{sup 2}/V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO{sub 2}. Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm{sup −3} to 5.83 g cm{sup −3} (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability.

  5. Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

    International Nuclear Information System (INIS)

    Chowdhury, Md Delwar Hossain; Um, Jae Gwang; Jang, Jin

    2014-01-01

    We have studied the effect of long time post-fabrication annealing on negative bias illumination stress (NBIS) of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Annealing for 100 h at 250 °C increased the field effect mobility from 14.7 cm 2 /V s to 17.9 cm 2 /V s and reduced the NBIS instability remarkably. Using X-ray photoelectron spectroscopy, the oxygen vacancy and OH were found to exist at the interfaces of a-IGZO with top and bottom SiO 2 . Long time annealing helps to decrease the vacancy concentration and increase the metal-oxygen bonds at the interfaces; this leads to increase in the free carrier concentrations in a-IGZO and field-effect mobility. X-ray reflectivity measurement indicated the increment of a-IGZO film density of 5.63 g cm −3 to 5.83 g cm −3 (3.4% increase) by 100 h annealing at 250 °C. The increase in film density reveals the decrease of O vacancy concentration and reduction of weak metal-oxygen bonds in a-IGZO, which substantially helps to improve the NBIS stability

  6. The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I

    Directory of Open Access Journals (Sweden)

    Lusitra Munisa

    2003-04-01

    Full Text Available Silicon Target Case. The effects of thermal annealing treatment on the optical properties of amorphous silicon carbon films deposited by silicon target in an argon, methane and hydrogen gas mixture have been studied using ultra violet-visible (uv-vis spectroscopy. Both n and α, and consequently the real and imaginary parts of the dielectric constant, show a considerable variation with subsequent annealing up to annealing temperature 500 °C, with the most rapid changes occurring for temperature 300 °C. The films tend denser as the annealing temperature increased up to 500°C. The optical gap improved slightly upon annealing, where as the disorder of the amorphous network reduced. The annealing treatment produces reorganization of the amorphous network since thermal annealing results in dissociation of hydrogenated bonds (Si-H and C-H.

  7. Effects of low temperature periodic annealing on the deep-level defects in 200 keV proton irradiated AlGaAs-GaAs solar cells

    Science.gov (United States)

    Li, S. S.; Chiu, T. T.; Loo, R. Y.

    1981-01-01

    The GaAs solar cell has shown good potential for space applications. However, degradation in performance occurred when the cells were irradiated by high energy electrons and protons in the space environment. The considered investigation is concerned with the effect of periodic thermal annealing on the deep-level defects induced by the 200 keV protons in the AlGaAs-GaAs solar cells. Protons at a fluence of 10 to the 11th P/sq cm were used in the irradiation cycle, while annealing temperatures of 200 C (for 24 hours), 300 C (six hours), and 400 C (six hours) were employed. The most likely candidate for the E(c) -0.71 eV electron trap observed in the 200 keV proton irradiated samples may be due to GaAs antisite, while the observed E(v) +0.18 eV hole trap has been attributed to the gallium vacancy related defect. The obtained results show that periodic annealing in the considered case does not offer any advantages over the one time annealing process.

  8. Effect of rapid thermal annealing on the Mo back contact properties for Cu_2ZnSnSe_4 solar cells

    International Nuclear Information System (INIS)

    Placidi, Marcel; Espindola-Rodriguez, Moises; Lopez-Marino, Simon; Sanchez, Yudania; Giraldo, Sergio; Acebo, Laura; Neuschitzer, Markus; Alcobé, Xavier; Pérez-Rodríguez, Alejandro; Saucedo, Edgardo

    2016-01-01

    The effect of a rapid thermal process (RTP) on the molybdenum (Mo) back contact for Cu_2ZnSnSe_4 (CZTSe) solar cells is here investigated. It is shown that the annealing of the Mo layer during 5 min at 550 °C, not only improves the crystalline quality of the back contact (avoiding the absorber decomposition at this region because Mo becomes more resistant to the selenization), but also helps achieving higher crystalline quality of the absorber with bigger grains, reducing the current leakage through the heterojunction. We demonstrate that this is related to the relaxation of the compressive stress of the CZTSe absorber, when synthesized on the RTP annealed substrates. CZTSe solar cells prepared on annealed Mo films exhibited higher short circuit current densities and higher open circuit voltages, resulting in 10% and 33% higher fill factors and efficiencies. - Highlights: • An RTP annealing applied for the first time on Mo for CZTSe solar cells. • Clear improvement of the efficiency from 5.7 to 7.6% with RTP treatment. • Discussion of this improvement with adequate material/device characterizations. • Stress-induced defects responsible of the electrical leakage are revealed.

  9. Effect of rapid thermal annealing on the Mo back contact properties for Cu{sub 2}ZnSnSe{sub 4} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Placidi, Marcel, E-mail: mplacidi@irec.cat [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, pl.2, 08930 St Adrià del Besòs, Barcelona (Spain); Espindola-Rodriguez, Moises; Lopez-Marino, Simon; Sanchez, Yudania; Giraldo, Sergio; Acebo, Laura; Neuschitzer, Markus [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, pl.2, 08930 St Adrià del Besòs, Barcelona (Spain); Alcobé, Xavier [Centres Científics i Tecnològics (CCiTUB), Lluis Solé i Sabarís 1, 08028 Barcelona (Spain); Pérez-Rodríguez, Alejandro [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, pl.2, 08930 St Adrià del Besòs, Barcelona (Spain); IN2UB, Departament d’Electrònica, Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona (Spain); Saucedo, Edgardo [Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, pl.2, 08930 St Adrià del Besòs, Barcelona (Spain)

    2016-08-05

    The effect of a rapid thermal process (RTP) on the molybdenum (Mo) back contact for Cu{sub 2}ZnSnSe{sub 4} (CZTSe) solar cells is here investigated. It is shown that the annealing of the Mo layer during 5 min at 550 °C, not only improves the crystalline quality of the back contact (avoiding the absorber decomposition at this region because Mo becomes more resistant to the selenization), but also helps achieving higher crystalline quality of the absorber with bigger grains, reducing the current leakage through the heterojunction. We demonstrate that this is related to the relaxation of the compressive stress of the CZTSe absorber, when synthesized on the RTP annealed substrates. CZTSe solar cells prepared on annealed Mo films exhibited higher short circuit current densities and higher open circuit voltages, resulting in 10% and 33% higher fill factors and efficiencies. - Highlights: • An RTP annealing applied for the first time on Mo for CZTSe solar cells. • Clear improvement of the efficiency from 5.7 to 7.6% with RTP treatment. • Discussion of this improvement with adequate material/device characterizations. • Stress-induced defects responsible of the electrical leakage are revealed.

  10. Infrared spectroscopy of water clusters isolated in methane matrices: Effects of isotope substitution and annealing

    International Nuclear Information System (INIS)

    Yamakawa, Koichiro; Ehara, Namika; Ozawa, Nozomi; Arakawa, Ichiro

    2016-01-01

    Using infrared-active solvents of CH_4 and CD_4 for matrix isolation, we measured infrared spectra of H_2O and D_2O clusters at 7 K. The solute-concentration dependence of the spectrum of H_2O clusters in a CH_4 matrix was investigated and was used for the peak assignment. Annealing procedures were found to promote the size growth of water clusters in methane matrices for all the combinations of (H_2O, CH_4), (H_2O, CD_4), (D_2O, CH_4), and (D_2O, CD_4). We also monitored the ν_3 absorption due to methane to find the annealing-induced structural change only of solid CH_4. The matrix effects on the vibrations of the clusters are discussed on the basis of “T_c plots”, where their frequencies are plotted as a function of the square root of the matrix critical temperature, T_c. The obtained plots assure the validity of the assignment of the cluster peaks.

  11. Thermochromic effect in NdNiO{sub 3-{delta}} thin films annealed in ambient air

    Energy Technology Data Exchange (ETDEWEB)

    Capon, F; Horwat, D; Pierson, J F [Institut Jean Lamour, Departement CP2S, (UMR CNRS 7198), Ecole des Mines, Parc de Saurupt, CS 14234, 54042 Nancy Cedex (France); Zaghrioui, M; Laffez, P, E-mail: fabien.capon@mines.inpl-nancy.f [Universite de Tours, IUT de Blois, Laboratoire d' Electrodynamique des Materiaux Avances, UMR CNRS CEA 6187, Place Jean Jaures, 41029 Blois cedex (France)

    2009-09-21

    The synthesis of NdNiO{sub 3} perovskite structure was achieved by soft post deposition annealing of initially amorphous thin films reactively sputter deposited on silicon substrates. The physical measurements were fully consistent with the properties expected for the thermochromic NdNiO{sub 3} phase. Upon heating, the optical transmission that was correlated with the electrical properties decreased in the infrared domain showing a thermochromic effect in this optical region. The metal-insulator transition temperature was found to be -68 {sup 0}C for the specimen tested and the jump in resistance at the transition was 1.4 orders of magnitude. The state-of-the-art methods that normally involve an annealing at a high oxygen pressure (200 x 10{sup 5} Pa) or epitaxial stabilization were considerably improved in this work by the use of dc sputtering and the optimization of the deposition conditions. Therefore, the novel soft process proposed here opens up numerous research possibilities. (fast track communication)

  12. Coherent Coupled Qubits for Quantum Annealing

    Science.gov (United States)

    Weber, Steven J.; Samach, Gabriel O.; Hover, David; Gustavsson, Simon; Kim, David K.; Melville, Alexander; Rosenberg, Danna; Sears, Adam P.; Yan, Fei; Yoder, Jonilyn L.; Oliver, William D.; Kerman, Andrew J.

    2017-07-01

    Quantum annealing is an optimization technique which potentially leverages quantum tunneling to enhance computational performance. Existing quantum annealers use superconducting flux qubits with short coherence times limited primarily by the use of large persistent currents Ip. Here, we examine an alternative approach using qubits with smaller Ip and longer coherence times. We demonstrate tunable coupling, a basic building block for quantum annealing, between two flux qubits with small (approximately 50-nA) persistent currents. Furthermore, we characterize qubit coherence as a function of coupler setting and investigate the effect of flux noise in the coupler loop on qubit coherence. Our results provide insight into the available design space for next-generation quantum annealers with improved coherence.

  13. Fluence-rate effects on irradiation embrittlement and composition and temperature effects on annealing/reirradiation sensitivity

    International Nuclear Information System (INIS)

    Hawthorne, J.R.; Hiser, A.L.

    1988-01-01

    Recent MEA investigation on the effect of neutron fluence rate on radiation-induced embrittlement accrual and the contributions of metallurgical variables to postirradiation annealing and re-irradiation behavior are reviewed. Studies of fluence-rate effects involved experiments in the UBR test reactor and separately, radiation sensitivity determinations for the decommissioned Gundremmingen (KRB-A) vessel material. Annealing-reirradiation studies employed 399 0 C and 454 0 C heat treatments. Material composition is shown to play a major role in postirradiation annealing recovery. Results illustrate effects of variable copper and variable nickel contents on recoveray of steel plate having low phosphorus levels. Composition effects on recovery were also observed for prototypic welds depicting high/low copper and high/low nickel contents and three flux types. The welds, in addition, indicate major differences in re-irradiation sensitivity. The UBR investigations revealed a significant difference in fluence rate sensitivity between the ASTM A 302-B reference plate and a submerged-arc (S/A) Linde 80 weld. Studies of the Gundremmingen reactor vessel, representing a joint USA-FRG-UK undertaking revealed an anomaly in strong vs. weak test orientation radiation sensitivity. (orig./HP)

  14. Effect of thermal annealing on resistance switching characteristics of Pt/ZrO2/TiN stacks

    International Nuclear Information System (INIS)

    Kim, Jonggi; Lee, Kyumin; Kim, Yonjae; Na, Heedo; Ko, Dae-Hong; Sohn, Hyunchul; Lee, Sunghoon

    2013-01-01

    In this study, the effect of thermal annealing on both the physical properties and the resistive switching properties of ZrO 2 films deposited by atomic layer deposition (ALD) method were investigated for its potential application to non-volatile memory devices. The ZrO 2 films in the Pt/ZrO 2 /TiN structure exhibited unipolar and bipolar resistance switching behaviors depending on the nature of the bias applied to Pt top electrodes for the electro-forming process. For unipolar switching, the resistance of the high resistance state (HRS) was reduced with increasing annealing temperature, accompanied with the increase of metallic Zr in the annealed ZrO 2 films. In contrast, the HRS resistance in the bipolar switching was increased while the low resistance state (LRS) resistance was decreased with increasing annealing temperature, producing a greater change in resistance. SIMS and EDX showed that the thickness of interfacial TiO x N y layer between the ZrO 2 and the TiN bottom electrode was enlarged with annealing. The enlarged TiO x N y layer was expected to produce the reduction of LRS resistance with the increase of HRS resistance in the bipolar resistance switching. - Highlights: • Effect of thermal annealing on resistive switching of ZrO 2 was investigated. • Both unipolar and bipolar switching were shown in the Pt/ZrO 2 /TiN stack. • TiO x N y interface layer was enlarged with increasing annealing temperature. • TiO x N y interface plays an important role in resistive switching properties

  15. Effect of annealing procedure on the bonding of ceramic to cobalt-chromium alloys fabricated by rapid prototyping.

    Science.gov (United States)

    Tulga, Ayca

    2018-04-01

    An annealing procedure is a heat treatment process to improve the mechanical properties of cobalt-chromium (Co-Cr) alloys. However, information is lacking about the effect of the annealing process on the bonding ability of ceramic to Co-Cr alloys fabricated by rapid prototyping. The purpose of this in vitro study was to evaluate the effects of the fabrication techniques and the annealing procedure on the shear bond strength of ceramic to Co-Cr alloys fabricated by different techniques. Ninety-six cylindrical specimens (10-mm diameter, 10-mm height) made of Co-Cr alloy were prepared by casting (C), milling (M), direct process powder-bed (LaserCUSING) with and without annealing (CL+, CL), and direct metal laser sintering (DMLS) with annealing (EL+) and without annealing (EL). After the application of ceramic to the metal specimens, the metal-ceramic bond strength was assessed using a shear force test at a crosshead speed of 0.5 mm/min. Shear bond strength values were statistically analyzed by 1-way ANOVA and Tukey multiple comparison tests (α=.05). Although statistically significant differences were found among the 3 groups (M, 29.87 ±2.06; EL, 38.92 ±2.04; and CL+, 40.93 ±2.21; P=.002), no significant differences were found among the others (P>.05). The debonding surfaces of all specimens exhibited mixed failure mode. These results showed that the direct process powder-bed method is promising in terms of metal-ceramic bonding ability. The manufacturing technique of Co-Cr alloys and the annealing process influence metal-ceramic bonding. Copyright © 2017 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

  16. Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.

    Science.gov (United States)

    Chen, Hong-Chih; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Guan-Fu; Chen, Bo-Wei; Hung, Yu-Ju; Chang, Kuo-Jui; Cheng, Kai-Chung; Huang, Chen-Shuo; Chen, Kuo-Kuang; Lu, Hsueh-Hsing; Lin, Yu-Hsin

    2018-02-26

    This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

  17. The influence of Ag content and annealing time on structural and optical properties of SGS antimony-germanate glass doped with Er3+ ions

    Science.gov (United States)

    Zmojda, J.; Kochanowicz, M.; Miluski, P.; Baranowska, A.; Basa, A.; Jadach, R.; Sitarz, M.; Dorosz, D.

    2018-05-01

    A series of erbium doped SGS antimony-germanate glass embedding silver (Ag0) nanoparticles have been synthesized by a one-step melt-quench thermochemical reduction technique. The effect of NPs concentration and annealing time on the structural and photoluminescent (PL) properties were investigated. The Raman spectra as a function of temperature measured in-situ allow to determine the structural changes in vicinity of Ag+ ions and confirmed thermochemical reduction of Ag+ ions by Sb3+ ions. The surface plasmon resonance absorption band was evidenced near 450 nm. The impact of local field effect generated by Ag0 nanoparticles (NPs) and energy transfer from surface of silver NPs to trivalent erbium ions on near-infrared and up-conversion luminescence was described in terms of enhancement and quench phenomena.

  18. The effect of annealing and desulfurization on oxide spallation of turbine airfoil material

    International Nuclear Information System (INIS)

    Briant, C.L.; Murphy, W.H.; Schaeffer, J.C.

    1995-01-01

    In this paper the authors report a study that addresses the sulfur-induced spallation theory. Previous work has shown that a high temperature anneal in hydrogen desulfurizes nickel-base alloys and greatly improves their resistance to oxide spallation. The authors will show that such an anneal can be applied successfully to a Ni-base airfoil material. Both Auger segregation experiments and chemical analyses show that this anneal desulfurizes the material, at least in the absence of yttrium. However, the results suggest that factors other than desulfurization may be contributing to the improvement in spallation resistance produced by the anneal

  19. Effect of high temperature annealing on defects and optical properties of ZnO single crystals

    International Nuclear Information System (INIS)

    Jiang, M.; Wang, D.D.; Zou, B.; Chen, Z.Q.; Kawasuso, A.; Sekiguchi, T.

    2012-01-01

    Hydrothermal grown ZnO single crystals were annealed in N 2 or O 2 between 900 and 1300 C. Positron lifetime measurements reveal a single lifetime in all the ZnO samples before and after annealing. The positron lifetime is about 181 ps after annealing at 900 C in either N 2 or O 2 atmosphere. However, increase of the positron lifetime is observed after further annealing the sample at higher temperatures up to 1300 C, and it has a faster increase in O 2 ambient. Temperature dependence measurements show that the positron lifetime has very slight increase with temperature for the 900 C annealed sample, while it shows notable variation for the sample annealed at 1300 C. This implied that annealing at high temperature introduces additional defects. These defects are supposed to be Zn vacancy-related defects. Cathodoluminescence (CL) measurements indicates enhancement of both UV and green emission after annealing, and the enhancement of green emission is much stronger for the samples annealed in O 2 ambient. The possible origin of green emission is tentatively discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Effect of starting point formation on the crystallization of amorphous silicon films by flash lamp annealing

    Science.gov (United States)

    Sato, Daiki; Ohdaira, Keisuke

    2018-04-01

    We succeed in the crystallization of hydrogenated amorphous silicon (a-Si:H) films by flash lamp annealing (FLA) at a low fluence by intentionally creating starting points for the trigger of explosive crystallization (EC). We confirm that a partly thick a-Si part can induce the crystallization of a-Si films. A periodic wavy structure is observed on the surface of polycrystalline silicon (poly-Si) on and near the thick parts, which is a clear indication of the emergence of EC. Creating partly thick a-Si parts can thus be effective for the control of the starting point of crystallization by FLA and can realize the crystallization of a-Si with high reproducibility. We also compare the effects of creating thick parts at the center and along the edge of the substrates, and a thick part along the edge of the substrates leads to the initiation of crystallization at a lower fluence.

  1. Effects of High-Temperature Annealing in Air on Hi-Nicalon Fiber-Reinforced Celsian Matrix Composites

    Science.gov (United States)

    Bansal, Narottam P.

    2008-01-01

    BN/SiC-coated Hi-Nicalon fiber-reinforced celsian matrix composites (CMC) were annealed for 100 h in air at various temperatures to 1200 C, followed by flexural strength measurements at room temperature. Values of yield stress and strain, ultimate strength, and composite modulus remain almost unchanged for samples annealed up to 1100 C. A thin porous layer formed on the surface of the 1100 C annealed sample and its density decreased from 3.09 to 2.90 g/cu cm. The specimen annealed at 1200 C gained 0.43 wt%, was severely deformed, and was covered with a porous layer of thick shiny glaze which could be easily peeled off. Some gas bubbles were also present on the surface. This surface layer consisted of elongated crystals of monoclinic celsian and some amorphous phase(s). The fibers in this surface ply of the CMC had broken into small pieces. The fiber-matrix interface strength was characterized through fiber push-in technique. Values of debond stress, alpha(sub d), and frictional sliding stress, tau(sub f), for the as-fabricated CMC were 0.31+/-0.14 GPa and 10.4+/-3.1 MPa, respectively. These values compared with 0.53+/-0.47 GPa and 8.33+/-1.72 MPa for the fibers in the interior of the 1200 C annealed sample, indicating hardly any change in fiber-matrix interface strength. The effects of thermal aging on microstructure were investigated using scanning electron microscopy. Only the surface ply of the 1200 C annealed specimens had degraded from oxidation whereas the bulk interior part of the CMC was unaffected. A mechanism is proposed explaining the various steps involved during the degradation of the CMC on annealing in air at 1200 C.

  2. Effect of Annealing Temperature on the Mechanical and Corrosion Behavior of a Newly Developed Novel Lean Duplex Stainless Steel.

    Science.gov (United States)

    Guo, Yanjun; Hu, Jincheng; Li, Jin; Jiang, Laizhu; Liu, Tianwei; Wu, Yanping

    2014-09-12

    The effect of annealing temperature (1000-1150 °C) on the microstructure evolution, mechanical properties, and pitting corrosion behavior of a newly developed novel lean duplex stainless steel with 20.53Cr-3.45Mn-2.08Ni-0.17N-0.31Mo was studied by means of optical metallographic microscopy (OMM), scanning electron microscopy (SEM), magnetic force microscopy (MFM), scanning Kelvin probe force microscopy (SKPFM), energy dispersive X-ray spectroscopy (EDS), uniaxial tensile tests (UTT), and potentiostatic critical pitting temperature (CPT). The results showed that tensile and yield strength, as well as the pitting corrosion resistance, could be degraded with annealing temperature increasing from 1000 up to 1150 °C. Meanwhile, the elongation at break reached the maximum of 52.7% after annealing at 1050 °C due to the effect of martensite transformation induced plasticity (TRIP). The localized pitting attack preferentially occurred at ferrite phase, indicating that the ferrite phase had inferior pitting corrosion resistance as compared to the austenite phase. With increasing annealing temperature, the pitting resistance equivalent number (PREN) of ferrite phase dropped, while that of the austenite phase rose. Additionally, it was found that ferrite possessed a lower Volta potential than austenite phase. Moreover, the Volta potential difference between ferrite and austenite increased with the annealing temperature, which was well consistent with the difference of PREN.

  3. Thermal annealing and pressure effects on BaFe2-xCoxAs2 single crystals.

    Science.gov (United States)

    Shin, Dongwon; Jung, Soon-Gil; Prathiba, G; Seo, Soonbeom; Choi, Ki-Young; Kim, Kee Hoon; Park, Tuson

    2017-11-26

    We investigate the pressure and thermal annealing effects on BaFe2-xCoxAs2 (Co-Ba122) single crystals with x = 0.1 and 0.17 via electrical transport measurements. The thermal annealing treatment not only enhances the superconducting transition temperature (Tc) from 9.6 to 12.7 K for x = 0.1 and from 18.1 to 21.0 K for x = 0.17, but also increases the antiferromagnetic transition temperature (TN). Simultaneous enhancement of Tc and TN by the thermal annealing treatment indicates that thermal annealing could substantially improve the quality of the Co-doped Ba122 samples. Interestingly, Tc of the Co-Ba122 compounds shows a scaling behavior with a linear dependence on the resistivity value at 290 K, irrespective of tuning parameters, such as chemical doping, pressure, and thermal annealing. These results not only provide an effective way to access the intrinsic properties of the BaFe2As2 system, but also may shed a light on designing new materials with higher superconducting transition temperature. © 2017 IOP Publishing Ltd.

  4. Effects of magnetic annealing on structure and multiferroic properties of pure and dysprosium substituted BiFeO 3

    KAUST Repository

    Zhang, Shuxia; Yao, Yingbang; Chen, Yao; Wang, Dongliang; Zhang, Xianping; Awaji, Satoshi; Watanabe, Kazuo; Ma, Yanwei

    2012-01-01

    In this work, the effects of magnetic annealing on crystal structure and multiferroic properties of BiFeO 3 and Bi 0.85Dy 0.15FeO 3 have been investigated. It is found that the X-ray diffraction patterns of pure BiFeO 3 samples are obviously broadened after magnetic annealing, whereas those of Bi 0.85Dy 0.15FeO 3 samples are almost unchanged. Magnetic field annealing did not affect the magnetic properties of these two kinds of samples much. However, ferroelectric properties of the two materials exhibited different behaviors after magnetic field annealing. For pure BiFeO 3 samples, the remnant polarizations (P r) are suppressed; in contrast, for Bi 0.85Dy 0.15FeO 3 samples, P r is greatly enhanced. Possible mechanisms for the effects of magnetic field annealing have been discussed. © 2012 Elsevier B.V. All rights reserved.

  5. Study of annealing effect on the growth of ZnO nanorods on ZnO seed layers

    Science.gov (United States)

    Sannakashappanavar, Basavaraj S.; Pattanashetti, Nandini A.; Byrareddy, C. R.; Yadav, Aniruddh Bahadur

    2018-04-01

    A zinc oxide (ZnO) seed layer was deposited on the SiO2/Si substrate by RF sputtering. To study the effect of annealing, the seed layers were classified into annealed and unannealed thin films. Annealing of the seed layers was carried at 450°C. Surface morphology of the seed layers were studied by Atomic force microscopy. ZnO nanorods were then grown on both the types of seed layer by hydrothermal method. The morphology and the structural properties of the nanorods were characterized by X-ray diffraction and Scanning electron microscopy. The effect of seed layer annealing on the growth and orientation of the ZnO nanorods were clearly examined on comparing with the nanorods grown on unannealed seed layer. The nanorods grown on annealed seed layers were found to be well aligned and oriented. Further, the I-V characteristic study was carried out on these aligned nanorods. The results supports positively for the future work to further enhance the properties of developed nanorods for their wide applications in electronic and optoelectronic devices.

  6. Effects of magnetic annealing on structure and multiferroic properties of pure and dysprosium substituted BiFeO 3

    KAUST Repository

    Zhang, Shuxia

    2012-07-01

    In this work, the effects of magnetic annealing on crystal structure and multiferroic properties of BiFeO 3 and Bi 0.85Dy 0.15FeO 3 have been investigated. It is found that the X-ray diffraction patterns of pure BiFeO 3 samples are obviously broadened after magnetic annealing, whereas those of Bi 0.85Dy 0.15FeO 3 samples are almost unchanged. Magnetic field annealing did not affect the magnetic properties of these two kinds of samples much. However, ferroelectric properties of the two materials exhibited different behaviors after magnetic field annealing. For pure BiFeO 3 samples, the remnant polarizations (P r) are suppressed; in contrast, for Bi 0.85Dy 0.15FeO 3 samples, P r is greatly enhanced. Possible mechanisms for the effects of magnetic field annealing have been discussed. © 2012 Elsevier B.V. All rights reserved.

  7. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  8. The effects of pre-dose and annealing temperature on some dosimetric properties of thermoluminescence of quartz

    International Nuclear Information System (INIS)

    Lin Zhikai

    1996-02-01

    The following aspects of dosimetric properties of quartz sample were studied. (1) The changes in dosimetric sensitivity of quartz with different pre-doses under different annealing temperature; (2) the option of optimal annealing temperature which can make the dosimetric sensitivity of quartz to restore its original level; (3) The changes in dosimetric sensitivity of quartz with different annealing time at 500 degree C for 8 h; (4) Repeated experiments were carried out in order to prove whether the sensitivity of quartz can restore its original level at annealing temperature 700 degree C for 3 h. It has been found that at 700 degree C for 3 h gave the least sensitivity change and the sensitivity of quartz almost restored its original level. Repeated experiments with four kinds of quartz sample confirmed this conclusion. The dramatic change of TL glow curve occurred only at the condition of annealing temperature 900 degree C for 1 h. This result was different from that obtained by D. J. Huntley et al. (1988). (3 refs., 4 figs., 1 tab.)

  9. Effect of annealing on SiO{sub x}-TiO{sub 2} axial heterostructure nanowires and improved photodetection

    Energy Technology Data Exchange (ETDEWEB)

    Dhar, J. C.; Singh, N. K. [Department of Electronics and Communication Engineering, National Institute of Technology Nagaland, Dimapur, Nagaland 797103 (India); Mondal, A., E-mail: aniruddhamo@gmail.com; Chakrabartty, S. [Department of Electronics and Communication Engineering, National Institute of Technology Agartala, Jirania, Tripura (West) 799055 (India); Bhattacharyya, A. [Department of Radio Physics and Electronics, University of Calcutta, Kolkata 700009 (India); Chattopadhyay, K. K. [Department of Physics, Jadavpur University, Kolkata 700032 (India)

    2013-12-28

    Glancing angle deposition technique has been used to synthesize the axial heterostructure SiO{sub x}-TiO{sub 2} nanowires (NWs) on the Si substrate. The field emission gun scanning electron microscope image shows the formation of perpendicular NWs on Si substrate. A typical transmission electron microscope image confirms the heterostructure NW which consists of SiO{sub x} of length ∼130 nm and TiO{sub 2} of length ∼170 nm. The amorphous NWs transformed to polycrystalline nature after annealing. The trap assisted radiative recombination process is absent for the annealed NWs. An averagely 1.1 fold enhanced photoabsorption was exhibited by the annealed NWs in the 200–350 nm region and 1.5 fold in the 500–850 nm region. The leakage current (2.6 × 10{sup −8} A/cm{sup 2} at −0.5 V) significantly reduced for annealed NWs device. A maximum 1.4 × 10{sup 3} times enlarged photodetection has been observed for annealed device.

  10. The effect of long annealing on Pb-doped high-Tc Bi-Sr-Ca-Cu-O systems

    Energy Technology Data Exchange (ETDEWEB)

    Chandra, S.; Agnihotry, S.A.; Asthana, P.; Nagpal, K.C.; Saini, K.K.; Chanderkant; Sharma, C.P.; Ekbote, S.N. (National Physical Lab., New Delhi (India))

    1991-01-16

    The lead doped Bi based copper oxide high-Tc superconductors with different nominal compositions and with different annealing time periods are studied. The highest Tc (zero) achieved is 112 K in bulk phase 2223. The varying intensity of the low angle line at 2{theta}{approx equal}4.7deg suggests the gradual formation of the high-Tc phase due to the long annealing of nearly 200 to 250 h. It is also found that the high-Tc phase starts degrading after 250 h of annealing and Tc reduces. The distortion of the 2223 phase is suggested by the broadening of different XRD peaks, also the SEM studies support the above contention. The EDAX studies show no presence of Pb in the crystallites. (orig.).

  11. Post Deposition Annealing Effects on Optical, Electrical and Morphological Studies of ZnTTBPc Thin Films

    Directory of Open Access Journals (Sweden)

    B. R. Rejitha

    2012-01-01

    Full Text Available Phthalocyanines (Pcs act as efficient absorbants of photons in the visible region, specifically between 600 and 700 nm. It will produce an excited triplet state. In this paper we report the annealing effects of optical, electrical and surface morphological properties of thermal evaporated Zinc-tetra-tert-butyl-29H, 31H phthalocyanine (ZnTTBPc thin films. The optical transmittance measurements were done in the visible region (400-800 nm and, films were found to be absorbing in nature. From spectral data the absorption coefficient α, dielectric constant ε and the extinction coefficient k were evaluated and, results discussed. Also the optical band gap of the material was estimated. The activation energies were measured. Scanning electron microscopic studies was carried out to determine surface uniformity of films.

  12. Effect of annealing temperature on electrical properties of poly (methyl methacrylate): titanium dioxide nanocomposite films using spin coating deposition technique

    International Nuclear Information System (INIS)

    Ismail, L N; Habibah, Z; Herman, S H; Rusop, M

    2014-01-01

    Nanocomposite poly (methyl methacrylate) :titanium dioxide (PMMA :TiO 2 ) film were deposited on glass substrate. The effect of annealing temperature, especially on electrical, dielectric and the morphological properties of the thin films were investigated by current-voltage (I-V) measurement, impedance spectroscopy, and FESEM. The annealing temperature is varies from 120°C, 140°C, 160°C, 180°C and 200°C. The electrical properties results showing when nanocomposite film annealed at '20°C produce the lowest current. Meanwhile, when the annealing temperature increased, the current increased drastically and this indicates the PMMA:TiO 2 nanocomposite film are no longer having insulating properties. The dielectric properties also indicate that film annealed at 120°C has the best dielectric properties compared to other temperature. The FESEM results show that as the temperature increased, the PMMA:TiO 2 nanocomposite film started to create a phase separation between the PMMA matrix and TiO 2 nanoparticles

  13. The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Brandhorst, H. W., Jr.; Mehta, S.; Swartz, C. K.

    1984-01-01

    Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

  14. Effect of the annealing ambient on the electrical characteristics of the amorphous InGaZnO thin film transistors.

    Science.gov (United States)

    Huang, Yu-Chih; Yang, Po-Yu; Huang, Hau-Yuan; Wang, Shui-Jinn; Cheng, Huang-Chung

    2012-07-01

    The influence of the thermal annealing on the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) under different ambient gases has been systematically addressed. The chemical bonding states and transfer characteristics of a-IGZO TFTs show evident dependence on the annealing ambient gas. For the a-IGZO TFTs in the oxygen ambient annealing at 250 degrees C for 30 mins exhibited a maximum field effect mobility (max muFE) of 9.36 cm2/V x s, on/off current ratio of 6.12 x 10(10), and a subthreshold slope (SS) of 0.21 V/decade. Respectively, the as-deposited ones without annealing possess a max muFE of 6.61 cm2/V x s, on/off current ratio of 4.58 x 10(8), and a SS of 0.46 V/decade. In contrast, the a-IGZO TFTs annealed at 250 degrees C for 30 mins in the nitrogen ambient would be degraded to have a max muFE of 0.18 cm2/V x s, on/off current ratio of 2.22 x 10(4), and a SS of 7.37 V/decade, corresponding. It is attributed to the content of the oxygen vacancies, according the x-ray photoelectron spectroscopy (XPS) analyze of the three different samples.

  15. Annealing effect on thermal conductivity and microhardness of carbon nanotube containing Se80Te16Cu4 glassy composites

    Science.gov (United States)

    Upadhyay, A. N.; Tiwari, R. S.; Singh, Kedar

    2018-02-01

    This study deals with the effect of thermal annealing on structural/microstructural, thermal and mechanical behavior of pristine Se80Te16Cu4 and carbon nanotubes (CNTs) containing Se80Te16Cu4 glassy composites. Pristine Se80Te16Cu4, 3 and 5 wt%CNTs-Se80Te16Cu4 glassy composites are annealed in the vicinity of glass transition temperature to onset crystallization temperature (340-380 K). X-ray diffraction (XRD) pattern revealed formation of polycrystalline phases of hexagonal CuSe and trigonal selenium. The indexed d-values in XRD patterns are in well conformity with the d-values obtained after the indexing of the ring pattern of selected area electron diffraction pattern of TEM images. The SEM investigation exhibited that the grain size of the CNTs containing Se80Te16Cu4 glassy composites increased with increasing annealing temperature and decreased at further higher annealing temperature. Thermal conductivity, microhardness exhibited a substantial increase with increasing annealing temperature of 340-360 K and slightly decreases for 380 K. The variation of thermal conductivity and microhardness can be explained by cross-linking formation and voids reduction.

  16. Interference effect on annealing temperature of A and E centers in silicon.

    Science.gov (United States)

    Fang, P. H.; Tanaka, T.

    1971-01-01

    The significance of recent experimental observations on the annealing defects in n-type silicon has been examined. The observed anomalous annealing temperatures of A and E centers and their impurity concentration dependence are explained by an interference between the two centers.

  17. Effect of annealing on properties of Mg doped Zn-ferrite nanoparticles

    Directory of Open Access Journals (Sweden)

    K. Nadeem

    2015-04-01

    Full Text Available A comparison of structural and magnetic properties of as-prepared and annealed (900 °C Mg doped Zn ferrite nanoparticles (Zn1−xMgxFe2O4, with x=0, 0.1, 0.2, 0.3, 0.4 and 0.5 is presented. X-ray diffraction (XRD studies confirmed the cubic spinel structure for both the as-prepared and annealed nanoparticles. The average crystallite size and lattice parameter were increased by annealing. Scanning electron microscopy (SEM images also showed that the average particle size increased after annealing. Fourier transform infrared spectroscopy (FTIR also confirmed the spinel structure for both series of nanoparticles. For both annealed and as-prepared nanoparticles, the O–Mtet.–O vibrational band shifts towards higher wave numbers with increased Mg concentration due to cationic rearrangement on the lattice sites. Magnetization studies revealed an anomalous decreasing magnetization for the annealed nanoparticles which is also ascribed to cationic rearrangement on the lattice sites after annealing. The measurement of coercivity showed a decreasing trend by annealing due to the increased nanoparticle size and better crystallinity.

  18. Effect of annealing on phase transition in poly(vinylidene fluoride)

    Indian Academy of Sciences (India)

    Here we report the crystallization of both and -phase PVDF films by varying preparation temperature using DMSO solvent. The -phase PVDF films were annealed at 70, 90, 110, 130 and 160°C for five hours. The changes in the phase contents in the PVDF at different annealing conditions have been described.

  19. Effect of annealing temperature on surface morphology and work function of ZnO nanorod arrays

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Hainan [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Xue, Mingshan, E-mail: xuems04@mails.ucas.ac.cn [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Ou, Junfei [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Jiangsu Key Laboratory for Solar Cell Materials and Technology, Changzhou University, Changzhou 213164 (China); Wang, Fajun [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China); Li, Wen, E-mail: wenl@ualberta.ca [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China)

    2013-07-15

    Highlights: •The 600°C and 450°C isothermal sections of the Zn-Fe-B system are determined. •The solubility of Zn in Fe{sub 2}B and FeB at 600°C is 1.8 at.% and 2.5 at.%, respectively. •The solubility of Zn in Fe{sub 2}B and FeB at 450°C is 1.7 at.% and 2.1 at.%, respectively. •All Fe-Zn compounds can be in equilibrium with Fe{sub 2}B at 450°C. •Both FeB and Fe{sub 2}B are in equilibrium with the liquid phase at 600°C. -- Abstract: A simple and effective method of fabricating nanomaterials and the understanding of their electronic structures are significant for designing novel nanodevices. In this study, ZnO nanorod arrays on ITO substrate were synthesized by electrochemical deposition, and the effect of annealing temperature on surface morphology and especially work function was investigated using various techniques. The results indicated that the formation of hexagonal ZnO nanorod arrays with (0 0 0 1) orientation was strongly associated with the annealing temperature. The work function of well-aligned ZnO nanorod arrays is 4.84 eV, which shows an obvious dependence on the arrangement of ZnO nanorod arrays. These changes in work function of ZnO nanorod arrays (e.g., used as the photoanode of dye-sensitized solar cells) are important to understand the electron transport of related nanodevices.

  20. Positron annihilation spectroscopy study on annealing effect of CuO nanoparticles

    International Nuclear Information System (INIS)

    Shi, Jianjian; Wang, Jiaheng; Yang, Wei; Zhu, Zhejie; Wu, Yichu

    2016-01-01

    The microstructure and defects of CuO nanoparticles under isochronal annealing were investigated by positron annihilation spectroscopy (PAS), X-ray diffraction (XRD) and scanning electron microscope (SEM). XRD and SEM results indicated that the average grain sizes of CuO nanoparticles grew slowly below 800 °C, and then increased rapidly with the annealing temperature from 800 to 1000 °C. Positron lifetime analysis exhibited that positrons were mainly annihilated in mono-vacancies (V Cu , V O ) and vacancy clusters when annealing from 200 to 800 °C. Furthermore, W-S plot of Doppler broadening spectra at different annealing temperatures found that the (W, S) points distributed on two different defect species, which suggested that V − Cu - V + O complexes were produced when the grains grew to bigger size after annealing above 800 °C, and positrons might annihilate at these complexes. (author)

  1. Effect of annealing temperature on electrochemical characteristics of ruthenium oxide/multi-walled carbon nanotube composites

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Min-Kang [Department of Chemistry, Inha University, 253, Incheon 402-751 (Korea, Republic of); Saouab, Abdelghani [Department of Mechanical Engineering, University of Le Havre, Place Robert Schuman, BP 4006, 76610 Le Havre (France); Park, Soo-Jin, E-mail: sjpark@inha.ac.k [Department of Chemistry, Inha University, 253, Incheon 402-751 (Korea, Republic of)

    2010-02-25

    The preparation and characterization of high-surface-area ruthenium oxide (RuO{sub 2})/multi-walled carbon nanotubes (MWCNTs) composite electrodes for use in supercapacitors is reported in this work. The RuO{sub 2}/MWCNTs composites were prepared by the polyol process of RuO{sub 2} into MWCNTs and by Ru annealing in air before mixed with MWCNTs. The chemically oxidized and annealed Ru nanoparticles contribute a pseudocapacitance to the electrodes and dramatically improve the energy storage characteristics of the MWCNTs. These composites annealed at 200 deg. C demonstrate specific capacitances in excess of 130 F/g in comparison to 80 F/g for pristine MWCNTs. The annealing temperature is found to play an important role, as it affects the electrochemical performance of annealed RuO{sub 2}/MWCNTs composites critically due to its influence on the diffusion of protons into the structure.

  2. Effect of Different Post Deposition Annealing Treatments on Properties of Zinc Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    Arti Arora

    2010-06-01

    Full Text Available Two different post deposition annealing atmospheres of oxygen and forming gas have been investigated for the improvement of rf sputtered zinc oxide thin films. The results show that type of atmosphere (oxidant o reduction plays an important role in the changes observed in structural, electrical and optical properties. It has been found that the structural properties of rf sputtered zinc oxide films improve in all the annealing environments. The intensity and grain size increases as the annealing temperature increases. It has been found that films become stress free at lowest temperature in oxygen as compare to forming gas annealing. The zinc oxide films annealed in oxygen shows sufficient resistivity associated to high transmittance (83 % characteristics required for MEMS based acoustic devices.

  3. Repair effect on patterned CoFeB-based magnetic tunneling junction using rapid thermal annealing

    International Nuclear Information System (INIS)

    Wu, K.-M.; Wang, Y.-H.; Chen, Wei-Chuan; Yang, S.-Y.; Shen, Kuei-Hung; Kao, M.-J.; Tsai, M.-J.; Kuo, C.-Y.; Wu, J.-C.; Horng, Lance

    2007-01-01

    Rapid thermal treatment without applying magnetic field reconstructing magnetic property of Co 60 Fe 20 B 20 was studied through magnetoresistance (R-H) measurement. In this paper, we report that the switching behaviors of CoFeB were obviously improved through rapid thermal annealing for only a brief 5 min. The squareness and reproduction of minor R-H loops were enhanced from 100 deg. C to 250 deg. C . Tunneling magnetoresistance (TMR) that is about 35% in the as-etched cells increases up to 44% after 250 deg. C rapid annealing and still shows about 25% TMR even after 400 deg. C treating. Therefore, repair purpose annealing is some what different from crystallizing purpose annealing. Applying magnetic field during repair annealing was not necessary. Brief thermal treatment improves CoFeB switching behavior indeed, and causes less damage at high temperature

  4. Effect of an annealing on magnetic properties of Fe-Ni films electroplated in citric-acid-based plating baths

    Science.gov (United States)

    Yanai, T.; Koda, K.; Eguchi, K.; Morimura, T.; Takashima, K.; Nakano, M.; Fukunaga, H.

    2018-04-01

    We have already reported Fe-Ni films with good soft magnetic properties prepared by using an electroplating method. In the present study, we employed an annealing for further improvement in soft magnetic properties of the electroplated Fe-Ni films. The annealing reduces the coercivity of the films, and the reduction rate of the coercivity depended on the Cl- ion concentration in the bath. The Fe22Ni78 films prepared in the plating bath with high Cl- ion concentration showed large reduction rate of the coercivity, and we found that the annealing is more effective for high Cl- ion concentration bath since much lower coercivity value can be obtained compared with that for low Cl- ion concentration one.

  5. Effect of an annealing on magnetic properties of Fe-Ni films electroplated in citric-acid-based plating baths

    Directory of Open Access Journals (Sweden)

    T. Yanai

    2018-04-01

    Full Text Available We have already reported Fe-Ni films with good soft magnetic properties prepared by using an electroplating method. In the present study, we employed an annealing for further improvement in soft magnetic properties of the electroplated Fe-Ni films. The annealing reduces the coercivity of the films, and the reduction rate of the coercivity depended on the Cl- ion concentration in the bath. The Fe22Ni78 films prepared in the plating bath with high Cl- ion concentration showed large reduction rate of the coercivity, and we found that the annealing is more effective for high Cl- ion concentration bath since much lower coercivity value can be obtained compared with that for low Cl- ion concentration one.

  6. Effect of Thermal Annealing on Carbon in In-situ Phosphorous-Doped Si1-xCx films

    International Nuclear Information System (INIS)

    Adam, Thomas; Loubet, Nicolas; Reznicek, Alexander; Paruchuri, Vamsi; Sampson, Ron; Sadana, Devendra

    2012-01-01

    The effect of thermal heat treatment on carbon in in-situ phosphorous-doped silicon-carbon is studied as a function of annealing temperature and type. Films of 0 to 2% carbon were deposited using cyclic chemical vapor deposition at reduced pressures. Secondary ion-mass spectroscopy and high-resolution X-ray diffraction were employed to extract the total and substitutional carbon concentration in samples with phosphorous levels of mid-10 20 cm -3 . It was found that millisecond laser annealing drastically improves substitutionality while high thermal budget treatments (furnace, rapid-thermal, or spike annealing) resulted in an almost complete loss of substitutional carbon, independent of preceding or subsequent laser heat treatments.

  7. Effects of rapid thermal annealing on the optical properties of strain-free quantum ring solar cells

    Science.gov (United States)

    2013-01-01

    Strain-free GaAs/Al0.33Ga0.67As quantum rings are fabricated by droplet epitaxy. Both photoresponse and photoluminescence spectra confirm optical transitions in quantum rings, suggesting that droplet epitaxial nanomaterials are applicable to intermediate band solar cells. The effects of post-growth annealing on the quantum ring solar cells are investigated, and the optical properties of the solar cells with and without thermal treatment are characterized by photoluminescence technique. Rapid thermal annealing treatment has resulted in the significant improvement of material quality, which can be served as a standard process for quantum structure solar cells grown by droplet epitaxy. PMID:23281811

  8. Effect of rapid thermal annealing on InP1−xBix grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wu, X Y; Wang, K; Pan, W W; Wang, P; Li, Y Y; Song, Y X; Gu, Y; Yue, L; Xu, H; Zhang, Z P; Cui, J; Gong, Q; Wang, S M

    2015-01-01

    The effect of post-growth rapid thermal annealing on structural and optical properties of InP 1−x Bi x thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions. (paper)

  9. Effects of potential and concentration of bicarbonate solution on stress corrosion cracking of annealed carbon steel

    International Nuclear Information System (INIS)

    Haruna, Takumi; Zhu, Liehong; Murakami, Makoto; Shibata, Toshio

    2000-01-01

    Effects of potential and concentration of bicarbonate on stress corrosion cracking (SCC) of annealed SM 400 B carbon steel has been investigated in bicarbonate solutions at 343 K. The surface of annealed specimen had decarburized layer of about 0. 5 mm thickness. A potentiostatic slow strain rate testing apparatus equipped with a charge coupled device camera system was employed to evaluate SCC susceptibility from the viewpoint of the crack behavior. In a constant bicarbonate concentration of 1 M, cracks were observed in the potential range from -800 to 600 mV Ag/ A gCl . and especially, the initiation and the propagation of the cracks were accelerated at -600 mV. At a constant potential of -600 mV, cracks were observed in the concentration range from 0.001 to 1 M, and the initiation and the propagation of the cracks were suppressed as the concentration decreased. Polarization curves for the decarburized surface were measured with two different scan rates. High SCC susceptibility may be expected in the potential range where the difference between the two current densities is large. It was found in this system that the potential with the maximum difference in the current density was -600 mV for 1 M bicarbonate solution, and the potential increased with a decrease in the concentration of bicarbonate. This means that an applied potential of -600 mV provides the highest SCC susceptibility for 1 M bicarbonate solution, and that the SCC susceptibility decreases as the concentration decreases. These findings support the dependence of the actual SCC behavior on the potential and the concentration of bicarbonate. (author)

  10. The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures

    International Nuclear Information System (INIS)

    Subramaniam, S.C.; Rezazadeh, A.A.

    2006-01-01

    The effects of Fe-ion bombardment at 77 K (cold) and room temperature (RT) into single layer InGaAs, InP and multilayer InP/InGaAs HBT structures have been investigated. Annealing characteristics and RF dissipation loss measurements of Fe-ion bombarded samples at 77 K indicated good electrical isolation in n-, p-type InGaAs materials and InP/InGaAs HBT structures. Thermally stable (up to 250 deg. C) high sheet resistance (R sh ) of ∼5 x 10 6 Ω/sq has been achieved on these samples while higher R sh of ∼10 7 Ω/sq was obtained for the n-InP materials bombarded with similar conditions. Dissipation losses of 1.7 dB/cm at 10 GHz and 2.8 dB/cm at 40 GHz have been measured for the cold Fe-ion bombarded InP-based HBT structures. This result is similar to those obtained for an un-bombarded S.I. InP substrate, indicating good electrical isolation. We have also determined electron trapping levels by thermal annealing for the cold and RT Fe-ion bombarded samples. It is shown that the high resistivity achieved in the cold implanted InGaAs layer is most likely due to the creation of mid-bandgap defect levels (E C - 0.33) eV, which are created only in the cold Fe-ion bombardment. The DC isolation and RF dissipation loss analysis have been used to identify a suitable bombardment scheme for the fabrication of planar InP/InGaAs HBTs

  11. The Effect of Annealing at 15000C on Migration and Release of Ion Implanted Silver in CVD Silicon Carbide

    International Nuclear Information System (INIS)

    HJ MacLean; RG Ballinger; LE Kolaya; SA Simonson; N Lewis; M Hanson

    2004-01-01

    The transport of silver in CVD β-SiC has been studied using ion implantation. Silver ions were implanted in β-SiC using the ATLAS accelerator facility at the Argonne National Laboratory. Ion beams with energies of 93 and 161 MeV were used to achieve deposition with peak concentrations at depths of approximately 9 and 13 (micro)m, respectively. As-implanted samples were then annealed at 1500 C for 210 or 480 hours. XPS, SEM, TEM, STEM, and optical methods were used to analyze the material before and after annealing. Silver concentration profiles were determined using XPS before and after annealing. STEM and SEM equipped with quantitative chemical analysis capability were used to more fully characterize the location and morphology of the silver before and after annealing. The results show that, within the uncertainty of measurement techniques, there is no silver migration, via either inter- or intragrannular paths, for the times and temperature studied. Additionally, the silver was observed to phase separate within the SiC after annealing. The irradiation damage from the implantation process resulted in a three-layer morphology in the as-implanted condition: (1) a layer of unaltered SiC, followed by (2) a layer of crystallized SiC, followed by (3) an amorphized layer which contained essentially all of the implanted silver. After annealing the layer structure changed. Layer 1 was unaltered. The grains in layer 2 recrystallized to form an epitaxial (columnar) layer. Layer 3 recrystallized to form a fine grain equiaxed layer. The results of this work do not support the long held assumption that silver release from CVD SiC, used for gas-reactor coated particle fuel, is dominated by grain boundary diffusion

  12. Annealing effects of carbon fiber-reinforced epoxy resin composites irradiated by electron beams

    International Nuclear Information System (INIS)

    Udagawa, Akira; Sasuga, Tuneo; Ito, Hiroshi; Hagiwara, Miyuki

    1987-01-01

    Carbon cloth-reinforced epoxy resin composites were irradiated with 2 MeV electrons at room temperature and then annealed in air for 2 h at temperatures up to 180 deg C. A considerable decrease in the three-point bending strength occurred when the irradiated composites were annealed in the temperature range of 115 - 135 deg C which is below the glass transition temperature T g of the matrix resin, while the bending strength remained unchanged up to 180 deg C for the unirradiated composites. In the dynamic viscoelastic spectra of the irradiated matrix, a new relaxation appeared at the temperature extending from 50 deg C to just below the matrix T g and disappeared on annealing for 2 h at 135 deg C. Annealing also decreased the concentration of free radicals existing stably in the irradiated matrix at room temperature. After annealing, a large amount of clacks and voids were observed in the fractography of the composites by scanning electron microscopy. These results indicate: (1) Annealing brings about rearrangement of the radiation-induced molecular chain scission in the matrix; (2) The bending strength of the irradiated composites decreased owing to the increased brittleness of the matrix by annealing. (author)

  13. Annealing effects on the photoresponse properties of CdSe nanocrystal thin films

    International Nuclear Information System (INIS)

    Lou Shiyun; Zhou Changhua; Wang Hongzhe; Shen Huaibin; Cheng Gang; Du Zuliang; Zhou, Shaomin; Li Linsong

    2011-01-01

    Highlights: → The as-prepared CdSe nanocrystal films were treated at 500 deg. C for 3 h under continuous N 2 . → Annealing process removed the organic capping completely and eliminated oxide on the CdSe surface. → Thermal annealing resulted the increase of the crystallite sizes and necking the NCs. → The photoresponse speed of the CdSe nanocrystal films was improved. - Abstract: The photoresponse properties of the as-prepared and annealed close-packed CdSe nanocrystal (NC) films were investigated under laser illumination by Kelvin probe force microscopy. The annealing process improved the photoresponse speed of the CdSe NC films. The work function of the annealed CdSe NC films changed more rapidly than that of the non-annealed film in air at room temperature. Combined with X-ray photoelectron spectroscopy measurements and thermogravimetric analysis, the observed phenomena can be interpreted that annealing process removed the organic capping agents completely and eliminated oxide on the CdSe surface, which formed the tunnel barrier between NCs in the CdSe NC films. Consequently, it improved the separation rate of photoelectric charges and thus provided high speed photoresponse.

  14. Annealing effects on the ferromagnetic resonance linewidths of sputter-deposited Fe{sub 100−x}Co{sub x}(001) thin films (x < 11)

    Energy Technology Data Exchange (ETDEWEB)

    Kusaoka, A.; Kimura, J.; Takahashi, Y., E-mail: takahasy@yz.yamagata-u.ac.jp; Inaba, N. [Graduate School of Science and Engineering, Yamagata University, Yonezawa, Yamagata 992-8510 (Japan); Kirino, F. [Graduate School of Fine Arts, Tokyo National University of Fine Arts and Music, Tokyo 110-8714 (Japan); Ohtake, M.; Futamoto, M. [Faculty of Science and Engineering, Chuo University, Tokyo 112-8551 (Japan)

    2015-05-07

    Effects of post-growth annealing on the magnetic damping of 3d transition alloy thin films were investigated. Fe{sub 100−x}Co{sub x} (x < 11 at. %) thin films were epitaxially deposited on GaAs(001) substrates by rf magnetron sputtering, and some of them were annealed without exposing to atmosphere. Electrical measurement showed that in-plane resistivity was smaller in the annealed films than in the as-deposited ones, indicating that the annealing mitigates crystalline imperfections and leads to reduced electron scattering rates. Magnetic damping was evaluated by the peak widths of ferromagnetic resonance (FMR) spectra obtained by a conventional Q-band spectrometer. Comparison of as-deposited and annealed specimens showed that the damping was decreased by annealing. Combined with the electrical and FMR measurements, these observations are consistent with the theoretical predictions that crystalline imperfections strongly influence the magnetic damping, both in intrinsic and extrinsic origins.

  15. Annealing effects on the ferromagnetic resonance linewidths of sputter-deposited Fe100−xCox(001) thin films (x < 11)

    International Nuclear Information System (INIS)

    Kusaoka, A.; Kimura, J.; Takahashi, Y.; Inaba, N.; Kirino, F.; Ohtake, M.; Futamoto, M.

    2015-01-01

    Effects of post-growth annealing on the magnetic damping of 3d transition alloy thin films were investigated. Fe 100−x Co x (x < 11 at. %) thin films were epitaxially deposited on GaAs(001) substrates by rf magnetron sputtering, and some of them were annealed without exposing to atmosphere. Electrical measurement showed that in-plane resistivity was smaller in the annealed films than in the as-deposited ones, indicating that the annealing mitigates crystalline imperfections and leads to reduced electron scattering rates. Magnetic damping was evaluated by the peak widths of ferromagnetic resonance (FMR) spectra obtained by a conventional Q-band spectrometer. Comparison of as-deposited and annealed specimens showed that the damping was decreased by annealing. Combined with the electrical and FMR measurements, these observations are consistent with the theoretical predictions that crystalline imperfections strongly influence the magnetic damping, both in intrinsic and extrinsic origins

  16. Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts

    International Nuclear Information System (INIS)

    Reddy, V. Rajagopal; Rao, P. Koteswara; Ramesh, C.K.

    2007-01-01

    Thermal annealing effects on electrical and structural properties of Ru/Au Schottky contact to n-type GaN (n d = 4.07 x 10 17 cm -3 ) have been investigated using current-voltage (I-V), capacitance-voltage (C-V), Auger electron spectroscopy (AES) and X-ray diffraction (XRD). The Schottky barrier height of the as-deposited sample was found to be 0.75 eV (I-V) and 0.93 eV (C-V), respectively. It is noted that the barrier height increased when the contact was annealed at 300 deg. C and slightly decreased upon annealing at temperatures of 400 deg. C and 500 deg. C. The extracted Schottky barrier heights are 0.99 eV (I-V), 1.34 eV (C-V) for 300 deg. C, 0.88 eV (I-V), 1.20 eV (C-V) for 400 deg. C and 0.72 eV (I-V), 1.08 eV (C-V) for 500 deg. C annealed contacts, respectively. Further it is observed that annealing results in the improvement of electrical properties of Ru/Au Schottky contacts. Based on Auger electron spectroscopy and X-ray diffraction studies, the formation of gallide phases at the Ru/Au/n-GaN interface could be the reason for the improvement of electrical characteristics upon annealing at elevated temperatures

  17. Electric field effects on radiation defects annealing in p-InP

    International Nuclear Information System (INIS)

    Sibille, A.

    1983-01-01

    Annealing experiments have been performed on electron irradiated Schottky diodes on p-InP. They show a strong influence of the applied reverse bias during annealing on the recovery of the free holes concentration, as well as on the disappearance of the dominant radiation induced hole traps detected by deep level transient spectroscopy (DLTS). Compensating defects are observed to drift under the action of the electric field and accumulate at the edge of the depleted zone, while the main hole traps created by the irradiation anneal faster when empty of holes or subjected to an electric field. (author)

  18. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  19. Effects of reductive annealing on insulating polycrystalline thin films of Nb-doped anatase TiO2: recovery of high conductivity

    International Nuclear Information System (INIS)

    Nakao, Shoichiro; Hirose, Yasushi; Hasegawa, Tetsuya

    2016-01-01

    We studied the effects of reductive annealing on insulating polycrystalline thin films of anatase Nb-doped TiO 2 (TNO). The insulating TNO films were intentionally fabricated by annealing conductive TNO films in oxygen ambient at 400 °C. Reduced free carrier absorption in the insulating TNO films indicated carrier compensation due to excess oxygen. With H 2 -annealing, both carrier density and Hall mobility recovered to the level of conducting TNO, demonstrating that the excess oxygen can be efficiently removed by the annealing process without introducing additional scattering centers. (paper)

  20. Annealing and deposition effects of the chemical composition of silicon rich nitride

    DEFF Research Database (Denmark)

    Andersen, Karin Nordström; Svendsen, Winnie Edith; Stimpel-Lindner, T.

    2005-01-01

    Silicon-rich nitride, deposited by LPCVD, is a low stress amorphous material with a high refractive index. After deposition the silicon-rich nitride thin film is annealed at temperatures above 1100 oC to break N-H bonds, which have absorption peaks in the wavelength band important for optical...... in optical waveguides. This means that the annealing temperature must be high enough to break the N-H bonds, but no so high as to produce clusters. Therefore, the process window for an annealing step lies between 1100 and 1150 oC. The chemical composition of amorphous silicon-rich nitride has been...... investigated by Rutherford back scattering (RBS) and X-ray photoelectron spectroscopy (XPS). The influence of deposition parameters and annealing temperatures on the stoichiometry and the chemical bonds will be discussed. The origin of the clusters has been found to be silicon due to severe silicon out...

  1. Effect of Annealing Temperature on Broad Luminescence of Silver-Exchanged Zeolites Y and A

    Science.gov (United States)

    Gui, Sa Chu Rong; Lin, H.; Bao, W.; Wang, W.

    2018-05-01

    The annealing temperature dependence of luminescence properties of silver (Ag)-exchanged zeolites Y and A was studied. It was found that the absorbance and excitation/emission bands are strongly affected by the thermal treatments. With increase in annealing temperature, the absorbance of Ag in zeolite Y increases at first and then decreases. However, the position of the excitation/emission band in zeolite Y was found to be insensitive to the annealing temperature. In contrast, the excitation/emission bands in zeolite A are particularly sensitive to the annealing temperature. The difference of such temperature dependence in zeolites Y and A may be due to the different microporous structure of the two minerals. Moreover, the fact that this dependence is not observed in Ag-exchanged zeolite Y is likely to be due to the difficulty in dehydration of zeolite Y in air or due to the weak Ag+-Ag+ interaction in zeolite Y.

  2. Effect of hydration on the annealing of chemical radiation damage in gamma-irradiated strontium bromate

    International Nuclear Information System (INIS)

    Nair, S.M.K.; Sahish, T.S.

    1991-01-01

    Rehydration of γ-irradiated anhydrous strontium bromate induces direct recovery of damage. The recovery process is unimolecular and the rehydrated salt is susceptible to thermal annealing. (author) 11 refs.; 2 figs

  3. Investigation of the effects of substrate annealing on the properties of polymer blends

    CSIR Research Space (South Africa)

    Motaung, DE

    2010-06-01

    Full Text Available by the controlled evaporation rate of the solvent. It is proposed that pre-substrate annealing controls the crystallization of P3HT, the phase separation and diffusion of the acceptor material (C60 or PCBM)...

  4. Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

    Science.gov (United States)

    Lee, In-Kyu; Lee, Kwan Hyi; Lee, Seok; Cho, Won-Ju

    2014-12-24

    We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.

  5. Annealing effects of Ga2O3-ZnO core-shell heteronanowires

    International Nuclear Information System (INIS)

    Kim, Hyoun Woo; Lee, Jong Woo; Kebede, Mesfin Abayneh; Kim, Hyo Sung; Lee, Chongmu

    2009-01-01

    We prepared ZnO-coated Ga 2 O 3 nanowires and investigated changes in the morphological, structural, and photoluminescence (PL) characteristics resulting from application of a thermal annealing process. With the thermal annealing at 800 deg. C, defect-associated PL peaks (2.2 and 2.6 eV) have been intensified with respect to the UV peak, and a new 2.8 eV-peak has been generated. Possible emission mechanisms are also discussed.

  6. Chemical Annealing of Zinc Tetraphenylporphyrin Films: Effects on Film Morphology and Organic Photovoltaic Performance

    KAUST Repository

    Trinh, Cong

    2012-07-10

    We present a chemical annealing process for organic thin films. In this process, a thin film of a molecular material, such as zinc tetraphenylporphyrin (ZnTPP), is exposed to a vapor of nitrogen-based ligand (e.g., pyrazine, pz, and triazine, tz), forming a film composed of the metal-ligand complex. Fast and quantitative formation of the complex leads to marked changes in the morphology and optical properties of the film. X-ray diffraction studies show that the chemical annealing process converts amorphous ZnTPP films to crystalline ZnTPP•ligand films, whose porphryin planes lie nearly parallel to the substrate (average deviation is 8° for the ZnTPP•pz film). Organic solar cells were prepared with ZnTPP donor and C 60 acceptor layers. Devices were prepared with and without chemical annealing of the ZnTPP layer with a pyrazine ligand. The devices with chemically annealed ZnTPP donor layer show an increase in short-circuit current (J SC) and fill factor (FF) relative to analogous unannealed devices, presumably because of enhanced exciton diffusion length and improved charge conductivity. The open circuit voltages (V OC) of the chemically annealed devices are lower than their unannealed counterpart because of enhanced polaron pair recombination at the donor/acceptor heterojunction. A net improvement of 5-20% in efficiency has been achieved, after chemical annealing of ZnTPP films with pyrazine. © 2012 American Chemical Society.

  7. Effect of external magnetic effect of external magnetic field annealing on magnetic texture of Mo containing NANOPERM-type alloys

    International Nuclear Information System (INIS)

    Kanuch, T.; Miglierini, M.; Greneche, J.-M.; Skorvanek, I.; Schaaf, P.

    2006-01-01

    External magnetic fields are known to modify microstructure of materials during their solidification and/or crystallisation. In an external magnetic field strong particle to particle interactions lead to a highly anisotropic microstructure. If the alloy is in ferromagnetic state, stronger particle magnetization - external field interactions and also particle-to-particle couplings are expected. To reveal the magnetic texture, originally amorphous precursors of Fe 76 Mo 8 Cu 1 B 15 were annealed at 510 grad C and 550 grad C in an external longitudinal and transverse magnetic field of 0.025 T and 0.8 T, respectively. Magnetic measurements were applied to follow the changes of saturation magnetization and coercive force. Moessbauer experiments were performed at room and liquid nitrogen temperature to provide an information about orientation of with respect to an external magnetic field. The obtained results were compared with those achieved on zero field annealed samples. We can conclude that such a low external magnetic fields applied during crystallisation cause no significant changes in the magnetic microstructural anisotropy. Afterwards, magneto-optical Kerr effect (MOKE) was applied to investigate possible changes at the surface of the ribbon as a function of annealing temperature and applied magnetic field. We observed combination of uniaxial anisotropy, which originates from the shape anisotropy, and four-fold anisotropy, which is a contribution from crystallites of nanometre size embedded in the residual amorphous matrix. We expect more pronounced effects on cobalt substituted (Fe1 -x Co x ) 76 Mo 8 Cu 1 B 15 alloy. (authors)

  8. Effects of annealing on the sensitivity of LiF TLD-100 after repeated use for low dose measurements

    International Nuclear Information System (INIS)

    Ogunleye, O.T.; Richmond, R.G.

    1987-01-01

    The changes in sensitivity of LiF TLD-100 extruded ribbons subjected to repeated use up to 100 times were investigated. Three different annealing regimes were compared. The dosemeters were annealed at 400 0 C followed by (i) a slow or (ii) fast cooling to room temperature or (iii) utilising a 20 s readout process in the reader without a high temperature annealing at 400 0 C. Each of the three groups consisted of two sets of 20 chips each, with one set receiving 500 μ Gy of 90 Sr beta radiation and the other unirradiated. Sensitivity evaluations were performed every five cycles through the first 50 cycles, and on each tenth cycle thereafter. On the average, the fast cooled group maintained their integrity best, while a maximum variation in sensitivity of about 15% was observed in the irradiated set of the slowly cooled group. A permanent increase in sensitivity of at least 10% was observed for the set of dosemeters receiving radiation without annealing. Glow curve analyses showed an increase in the ratio of peaks 4 and 5 with repeated use of this group. (author)

  9. Study of thermal annealing effect on Bragg gratings photo-inscribed in step-index polymer optical fibers

    Science.gov (United States)

    Hu, X.; Kinet, D.; Mégret, P.; Caucheteur, C.

    2016-04-01

    In this paper, both non-annealed and annealed trans-4-stilbenemethanol-doped step-index polymer optical fibers were photo-inscribed using a 325 nm HeCd laser with two different beam power densities reaching the fiber core. In the high density regime where 637 mW/mm2 are used, the grating reflectivity is stable over time after the photo-writing process but the reflected spectrum is of limited quality, as the grating physical length is limited to 1.2 mm. To produce longer gratings exhibiting more interesting spectral features, the beam is enlarged to 6 mm, decreasing the power density to 127 mW/mm2. In this second regime, the grating reflectivity is not stable after the inscription process but tends to decay for both kinds of fibers. A fortunate property in this case results from the possibility to fully recover the initial reflectivity using a post-inscription thermal annealing, where the gratings are annealed at 80 °C during 2 days. The observed evolutions for both regimes are attributed to the behavior of the excited intermediate states between the excited singlet and the ground singlet state of trans- and cis-isomers as well as the temperature-dependent glassy polymer matrix.

  10. The effects of different heat treatment annealing on structural properties of LaFe11.5Si1.5 compound

    Science.gov (United States)

    Norizan, Yang Nurhidayah Asnida; Din, Muhammad Faiz Md; Zamri, Wan Fathul Hakim W.; Hashim, Fakroul Ridzuan; Jusoh, Mohd Taufik; Rahman, Mohd Rashid Abdul

    2018-02-01

    The cubic NaZn13-type LaFe13-xSix based compounds have been studied systematically and has become one of the most interesting systems for exploring large MCE. Its magnetic properties are strongly doping dependent and provides many of advantage compare to other as magnetic materials for magnetic refrigerator application. In other to produce high quality of cubic NaZn13-type structure, the structural properties of LaFe11.5Si1.5 compounds annealed at different temperature have been investigated. The LaFe11.5Si1.5 compounds was prepared by arc melting and annealed at two different heat treatment which are 1323 K for 14 days and 1523 K for 4 hour. The powder X-ray diffraction (XRD) shows that a short time and high temperature annealing process has benefits for the formation of the NaZn13-type phase compared to a long time and low temperature annealing process. This is shown by the weight fraction of cubic NaZn13- type structure increases from 80% for low temperature annealing to 83% for high temperature annealing. At the same time, high temperature annealing increase the main structure and decrease the impurity (α-Fe and LaFeSi). Furthermore, it can be clearly seen in the Rietveld refinement results that the lattice parameter is increase at the high temperature annealing because of more cubic NaZn13 is formed at higher temperature.

  11. Effects of Co layer thickness and annealing temperature on the magnetic properties of inverted [Pt/Co] multilayers

    International Nuclear Information System (INIS)

    Lee, Tae Young; Chan Won, Young; Su Son, Dong; Lee, Seong-Rae; Ho Lim, Sang

    2013-01-01

    The effects of Co layer thickness and annealing temperature on the perpendicular magnetic anisotropy (PMA) properties of inverted [Pt (0.2 nm)/Co (t Co )] 6 multilayers (where t Co indicates the thickness of the Co layer) have been investigated. The cross-sectional microstructure, as observed from the high-resolution transmission electron microscope images, shows a clear layered structure with atomically flat interfaces both in the as-deposited state as well as after annealing, indicating the interface effects for PMA. The effective PMA energy density (K eff ) increases significantly with an increase in t Co from 0.2 to 0.28 nm and then becomes almost saturated with further increases in t Co , followed by a slight reduction at the highest Co thickness, t Co  = 0.6 nm. In order to explain the t Co dependence on K eff , the intrinsic PMA energy density (K i ) is calculated by additionally measuring a similar set of results for the saturation magnetization. The K i value increases nearly linearly with the increase in t Co from 0.2 to 0.5 nm, followed by saturation at a higher t Co value of 0.6 nm. Owing to a close relationship between K i and the quality of the interfaces, these results indicate a similar t Co dependence on the quality of the interfaces. This is further supported from the magnetic measurements of the samples annealed at the highest temperature of 500 °C, where a second phase is formed, which show a similar t Co dependence on the amount of the second phase. The K i value is nearly independent of the annealing temperature at t Co  ≤ 0.4 nm, above which a substantial reduction is observed, when the annealing temperature exceeds 500 °C

  12. Effects of hydrogen annealing on the room temperature ferromagnetism and optical properties of Cr-doped ZnO nanoparticles

    International Nuclear Information System (INIS)

    Tong Liuniu; Wang Yichao; He Xianmei; Han Huaibin; Xia Ailin; Hu Jinlian

    2012-01-01

    We explore the effects of hydrogen annealing on the room temperature ferromagnetism and optical properties of Cr-doped ZnO nanoparticles synthesized by the sol-gel method. X-ray diffraction and x-ray photoelectron spectroscopy data show evidence that Cr has been incorporated into the wurtzite ZnO lattice as Cr 2+ ions substituting for Zn 2+ ions without any detectable secondary phase in as-synthesized Zn 0.97 Cr 0.03 O nanopowders. The room temperature magnetization measurements reveal a large enhancement of saturation magnetization M s as well as an increase of coercivity of H 2 -annealed Zn 0.97 Cr 0.03 O:H samples. It is found that the field-cooled magnetization curves as a function of temperature from 40 to 400 K can be well fitted by a combination of a standard Bloch spin-wave model and Curie–Weiss law. The values of the fitted parameters of the ferromagnetic exchange interaction constant a and the Curie constant C of H 2 -annealed Zn 0.97 Cr 0.03 O:H nanoparticles are almost doubled upon H 2 -annealing. Photoluminescence measurements show evidence that the shallow donor defect or/and defect complexes such as hydrogen occupying an oxygen vacancy H o may play an important role in the origin of H 2 -annealing induced enhancement of ferromagnetism in Cr-H codoped ZnO nanoparticles. - Graphical Abstract: The H 2 -annealing induced enhancement of room temperature ferromagnetism in Cr-doped ZnO nanoparticles is observed. It is found that the field-cooled M-T curves can be well fitted by a combination of a standard Bloch spin-wave model and Curie–Weiss law. The values of the fitted parameters of the ferromagnetic exchange interaction constant a and the Curie constant C of H 2 -annealed Zn 0.97 Cr 0.03 O:H nanoparticles are almost doubled upon H 2 -annealing. The PL data show evidence that the hydrogen related shallow donor defect or/and defect complexes may be responsible for it. Display Omitted Highlights: ► The H 2 -annealing induced a large enhancement of

  13. Oxygen incorporation effects in annealed epitaxial La(1-x)SrxMnO3 thin films

    International Nuclear Information System (INIS)

    Petrisor, T.; Gabor, M. S.; Tiusan, C.; Boulle, A.; Bellouard, C.; Pana, O.; Petrisor, T.

    2011-01-01

    This paper presents our results regarding oxygen incorporation effects in epitaxial La (1-x) Sr x MnO 3 thin films, deposited on SrTiO 3 (001) single crystal substrates, by annealing in different gas mixtures of argon and oxygen. A particular emphasis is placed on the correlation of structural properties with the magnetic properties of the films, Curie temperature, and coercive field. In this sense, we demonstrate that the evolution of the diffuse part of the ω-scans performed on the films are due to oxygen excess in the film lattice, which creates cationic vacancies within the films. Also, we show that two regimes of oxygen incorporation in the films exist, one in which the films evolve toward a single phase and oxygen stoichiometry is recovered, and a second one dominated by oxygen over-doping effects. In order to support our study, XPS measurements were performed, from which we have evaluated the Mn 3+ /Mn 4+ ionic ratio.

  14. Laser annealing effects of the Raman laser on nitrogen implanted glassy carbon

    Energy Technology Data Exchange (ETDEWEB)

    Barbara, D.; Prawer, S.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    Raman analysis is a popular method of investigating crystallite sizes, ordering and the types of bonds that exist in ion irradiated carbon materials, namely graphite, diamond and glassy carbon (G.C.). In particular Raman spectroscopy is used in determining the tetrahedral bonding required for the elusive and potentially important new material called carbon nitride. Carbon nitride, {beta}-C{sub 3}N{sub 4}, is predicted to exist in several forms. Forming the tetrahedral bond between C and N has proved troublesome bain of many experimenters. A proven method for synthesizing novel materials is ion implantation. Thus G.C. was implanted with N at low temperatures so that diffusion of the implanted N would be hindered. G.C. is a relatively hard, chemically inert, graphitic material. The opaque property of G.C. means that Raman spectroscopy will only give information about the structures that exist at the surface and near surface layers. It was decided, after observing conflicting Raman spectra at different laser powers, that an investigation of the laser annealing effects of the Raman laser on the N implanted G.C. was warranted. The results of the preliminary investigation of the effects of increasing the Raman laser power and determining a power density threshold for high dose N implanted G.C. are discussed. 4 refs., 4 figs.

  15. Laser annealing effects of the Raman laser on nitrogen implanted glassy carbon

    Energy Technology Data Exchange (ETDEWEB)

    Barbara, D; Prawer, S; Jamieson, D N [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1997-12-31

    Raman analysis is a popular method of investigating crystallite sizes, ordering and the types of bonds that exist in ion irradiated carbon materials, namely graphite, diamond and glassy carbon (G.C.). In particular Raman spectroscopy is used in determining the tetrahedral bonding required for the elusive and potentially important new material called carbon nitride. Carbon nitride, {beta}-C{sub 3}N{sub 4}, is predicted to exist in several forms. Forming the tetrahedral bond between C and N has proved troublesome bain of many experimenters. A proven method for synthesizing novel materials is ion implantation. Thus G.C. was implanted with N at low temperatures so that diffusion of the implanted N would be hindered. G.C. is a relatively hard, chemically inert, graphitic material. The opaque property of G.C. means that Raman spectroscopy will only give information about the structures that exist at the surface and near surface layers. It was decided, after observing conflicting Raman spectra at different laser powers, that an investigation of the laser annealing effects of the Raman laser on the N implanted G.C. was warranted. The results of the preliminary investigation of the effects of increasing the Raman laser power and determining a power density threshold for high dose N implanted G.C. are discussed. 4 refs., 4 figs.

  16. Inverse strain rate effect on cyclic stress response in annealed Zircaloy-2

    Energy Technology Data Exchange (ETDEWEB)

    Sudhakar Rao, G.; Verma, Preeti [Center of Advanced Study, Department of Metallurgical Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India); Chakravartty, J.K. [Mechanical Metallurgy Group, Bhabha Atomic Research Center, Trombay 400 085, Mumbai (India); Nudurupati, Saibaba [Nuclear Fuel Complex, Hyderabad 500 062 (India); Mahobia, G.S.; Santhi Srinivas, N.C. [Center of Advanced Study, Department of Metallurgical Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India); Singh, Vakil, E-mail: vsingh.met@itbhu.ac.in [Center of Advanced Study, Department of Metallurgical Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

    2015-02-15

    Low cycle fatigue behavior of annealed Zircaloy-2 was investigated at 300 and 400 °C at different strain amplitudes and strain rates of 10{sup −2}, 10{sup −3}, and 10{sup −4} s{sup −1}. Cyclic stress response showed initial hardening with decreasing rate of hardening, followed by linear cyclic hardening and finally secondary hardening with increasing rate of hardening for low strain amplitudes at both the temperatures. The rate as well the degree of linear hardening and secondary hardening decreased with decrease in strain rate at 300 °C, however, there was inverse effect of strain rate on cyclic stress response at 400 °C and cyclic stress was increased with decrease in strain rate. The fatigue life decreased with decrease in strain rate at both the temperatures. The occurrence of linear cyclic hardening, inverse effect of strain rate on cyclic stress response and deterioration in fatigue life with decrease in strain rate may be attributed to dynamic strain aging phenomena resulting from enhanced interaction of dislocations with solutes. Fracture surfaces revealed distinct striations, secondary cracking, and oxidation with decrease in strain rate. Deformation substructure showed parallel dislocation lines and dislocation band structure at 300 °C. Persistent slip band wall structure and development of fine Corduroy structure was observed at 400 °C.

  17. Laser annealing effects of the Raman laser on nitrogen implanted glassy carbon

    International Nuclear Information System (INIS)

    Barbara, D.; Prawer, S.; Jamieson, D.N.

    1996-01-01

    Raman analysis is a popular method of investigating crystallite sizes, ordering and the types of bonds that exist in ion irradiated carbon materials, namely graphite, diamond and glassy carbon (G.C.). In particular Raman spectroscopy is used in determining the tetrahedral bonding required for the elusive and potentially important new material called carbon nitride. Carbon nitride, β-C 3 N 4 , is predicted to exist in several forms. Forming the tetrahedral bond between C and N has proved troublesome bain of many experimenters. A proven method for synthesizing novel materials is ion implantation. Thus G.C. was implanted with N at low temperatures so that diffusion of the implanted N would be hindered. G.C. is a relatively hard, chemically inert, graphitic material. The opaque property of G.C. means that Raman spectroscopy will only give information about the structures that exist at the surface and near surface layers. It was decided, after observing conflicting Raman spectra at different laser powers, that an investigation of the laser annealing effects of the Raman laser on the N implanted G.C. was warranted. The results of the preliminary investigation of the effects of increasing the Raman laser power and determining a power density threshold for high dose N implanted G.C. are discussed. 4 refs., 4 figs

  18. Inverse strain rate effect on cyclic stress response in annealed Zircaloy-2

    International Nuclear Information System (INIS)

    Sudhakar Rao, G.; Verma, Preeti; Chakravartty, J.K.; Nudurupati, Saibaba; Mahobia, G.S.; Santhi Srinivas, N.C.; Singh, Vakil

    2015-01-01

    Low cycle fatigue behavior of annealed Zircaloy-2 was investigated at 300 and 400 °C at different strain amplitudes and strain rates of 10 −2 , 10 −3 , and 10 −4 s −1 . Cyclic stress response showed initial hardening with decreasing rate of hardening, followed by linear cyclic hardening and finally secondary hardening with increasing rate of hardening for low strain amplitudes at both the temperatures. The rate as well the degree of linear hardening and secondary hardening decreased with decrease in strain rate at 300 °C, however, there was inverse effect of strain rate on cyclic stress response at 400 °C and cyclic stress was increased with decrease in strain rate. The fatigue life decreased with decrease in strain rate at both the temperatures. The occurrence of linear cyclic hardening, inverse effect of strain rate on cyclic stress response and deterioration in fatigue life with decrease in strain rate may be attributed to dynamic strain aging phenomena resulting from enhanced interaction of dislocations with solutes. Fracture surfaces revealed distinct striations, secondary cracking, and oxidation with decrease in strain rate. Deformation substructure showed parallel dislocation lines and dislocation band structure at 300 °C. Persistent slip band wall structure and development of fine Corduroy structure was observed at 400 °C

  19. Annealing effect on the structural, morphological and electrical properties of TiO2/ZnO bilayer thin films

    Science.gov (United States)

    Khan, M. I.; Imran, S.; Shahnawaz; Saleem, Muhammad; Ur Rehman, Saif

    2018-03-01

    The effect of annealing temperature on the structural, morphological and electrical properties of TiO2/ZnO (TZ) thin films has been observed. Bilayer thin films of TiO2/ZnO are deposited on FTO glass substrate by spray pyrolysis method. After deposition, these films are annealed at 573 K, 723 K and 873 K. XRD shows that TiO2 is present in anatase phase only and ZnO is present in hexagonal phase. No other phases of TiO2 and ZnO are present. Also, there is no evidence of other compounds like Zn-Ti etc. It also shows that the average grain size of TiO2/ZnO films is increased by increasing annealing temperature. AFM (Atomic force microscope) showed that the average roughness of TiO2/ZnO films is decreased at temperature 573-723 K and then increased at 873 K. The calculated average sheet resistivity of thin films annealed at 573 K, 723 K and 873 K is 152.28 × 102, 75.29 × 102 and 63.34 × 102 ohm-m respectively. This decrease in sheet resistivity might be due to the increment of electron concentration with increasing thickness and the temperature of thin films.

  20. Effect of Solution Annealing on Susceptibility to Intercrystalline Corrosion of Stainless Steel with 20% Cr and 8% Ni

    Science.gov (United States)

    Taiwade, R. V.; Patil, A. P.; Patre, S. J.; Dayal, R. K.

    2013-06-01

    In general, as-received (AR) austenitic stainless steels (ASSs) contain complex carbide precipitates due to manufacturing operations, subsequent annealing treatment, or due to the fabrication processes such as welding. The presence of pre-existing carbides leads to cumulative sensitization and make the steel susceptible to intercrystalline corrosion (ICC)/intergranular corrosion (IGC) which causes premature failure during service. Solution annealing (SA) is one of the ways to deal with such situations. In this present investigation, the AR (hot rolled and mill annealed) chromium-nickel (Cr-Ni) ASS is compared with SA Cr-Ni ASS. The extent of ICC/IGC was evaluated qualitatively and quantitatively by various electrochemical tests including ASTM standard A-262 Practice A and Practice E, double loop electrochemical potentiokinetic reactivation and electrochemical impedance spectroscopy. The degree of sensitization for hot rolled mill annealed AR condition is found to be substantially higher (51.55%) than that of SA condition (26.9%) for thermally aged samples (at 700 °C). The chemical composition across the grain boundary was measured using electron probe micro-analyzer for both (AR and SA) conditions and confirms that the pre-sensitization effect was completely removed after SA treatment.

  1. Effects of casting and post casting annealing on xylene isomer transport properties of Torlon® 4000T films

    KAUST Repository

    Chafin, Raymond; Lee, Jong Suk; Koros, William J.

    2010-01-01

    Procedures for Torlon® 4000T membrane formation were developed to provide attractive and repeatable xylene separation properties. Torlon® 4000T membrane films cast by our method were investigated in terms of thermally induced imidization, molecular weight enhancement, and solvent removal. After development of the Torlon® 4000T casting procedure, pervaporation of a xylene mixture (i.e. 30% para-xylene, 30% meta-xylene, 30% ortho-xylene, and 10% ethylbenzene) was performed in both Torlon® 4000T and post casting annealed Torlon® 4000T films. The xylene pervaporation in annealed Torlon® 4000T film at 200°C gave a permeability of 0.25 Barrer and a selectivity of 3.1 (para/ortho) and 2.1 (para/meta) respectively. A so-called " permeability collapse" reflecting an accelerated reduction in the free volume is consistent with significant temperature-induced changes in the films observed after thermal annealing at 300°C. This conditioning effect is induced by a combination of heat treatment and the presence of the interacting aromatic penetrants. Optical methods were used to verify that the density of annealed samples exposed to xylene for 5 days eventually increased, suggesting that the membrane is originally swollen upon initial xylene exposure, and then relaxes to a more densified, and more discriminating state. © 2010 Elsevier Ltd.

  2. Effect of Annealing on the Structural and Optical Properties of Nano Fiber ZnO Films Deposited by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    M. R. Islam

    2011-11-01

    Full Text Available Nano fiber ZnO films have been deposited on to glass substrate at 200 °C by a simple spray pyrolysis technique under atmospheric pressure. The effect of annealing temperature on the structural and optical properties of the as grown films has been studied by Scanning Electron Microscopy (SEM attached with an EDX, powder X-ray diffraction and UV visible spectroscopy. The atomic weight % of Zinc and Oxygen were found to be 49.22 % and 49.62 % respectively. The SEM micrographs show nano fiber structure and uniform deposition on the substrate. Average grain size of ZnO thin film was found in the range of 21 to 27 nm. The lattice constant a and c of ZnO thin film are determined at different annealing temperatures and values are found slightly larger than those of JCPDS data and lower for the sample annealed at 600 °C. The lattice parameters a and c decrease with increasing temperature. It reveals that the samples are poly-crystalline and having with low densities. Band gap energy of ZnO was found in the range of 3.33 to 3.17 eV and decreases with the increase of the annealing temperature.

  3. Effects of annealing, acid and alcoholic beverages on Fe1+yTe0.6Se0.4

    International Nuclear Information System (INIS)

    Sun, Y; Taen, T; Tsuchiya, Y; Tamegai, T; Shi, Z X

    2013-01-01

    We have systematically investigated and compared different methods to induce superconductivity in the iron chalcogenide Fe 1+y Te 0.6 Se 0.4 , including annealing in a vacuum, N 2 , O 2 and I 2 atmospheres and immersing samples into acid and alcoholic beverages. Vacuum and N 2 annealing are proved to be ineffective in inducing superconductivity in a Fe 1+y Te 0.6 Se 0.4 single crystal. Annealing in O 2 and I 2 and immersion in acid and alcoholic beverages can induce superconductivity by oxidizing the excess Fe in the sample. Superconductivity in O 2 annealed samples is of a bulk nature, while I 2 , acid and alcoholic beverages can only induce superconductivity near the surface. By comparing the different effects of O 2 , I 2 , acid and alcoholic beverages we propose a scenario to explain how the superconductivity is induced in the non-superconducting as-grown Fe 1+y Te 0.6 Se 0.4 . (paper)

  4. Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

    Directory of Open Access Journals (Sweden)

    Hyun-Woo Lee

    2018-01-01

    Full Text Available We investigated the effects of vacuum rapid thermal annealing (RTA on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

  5. Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

    Science.gov (United States)

    Lee, Hyun-Woo; Cho, Won-Ju

    2018-01-01

    We investigated the effects of vacuum rapid thermal annealing (RTA) on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs) with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

  6. Effects of casting and post casting annealing on xylene isomer transport properties of Torlon® 4000T films

    KAUST Repository

    Chafin, Raymond

    2010-07-01

    Procedures for Torlon® 4000T membrane formation were developed to provide attractive and repeatable xylene separation properties. Torlon® 4000T membrane films cast by our method were investigated in terms of thermally induced imidization, molecular weight enhancement, and solvent removal. After development of the Torlon® 4000T casting procedure, pervaporation of a xylene mixture (i.e. 30% para-xylene, 30% meta-xylene, 30% ortho-xylene, and 10% ethylbenzene) was performed in both Torlon® 4000T and post casting annealed Torlon® 4000T films. The xylene pervaporation in annealed Torlon® 4000T film at 200°C gave a permeability of 0.25 Barrer and a selectivity of 3.1 (para/ortho) and 2.1 (para/meta) respectively. A so-called " permeability collapse" reflecting an accelerated reduction in the free volume is consistent with significant temperature-induced changes in the films observed after thermal annealing at 300°C. This conditioning effect is induced by a combination of heat treatment and the presence of the interacting aromatic penetrants. Optical methods were used to verify that the density of annealed samples exposed to xylene for 5 days eventually increased, suggesting that the membrane is originally swollen upon initial xylene exposure, and then relaxes to a more densified, and more discriminating state. © 2010 Elsevier Ltd.

  7. Effect of annealing on structural and optical properties of Cu_2ZnSnS_4 thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Surgina, G.D.; Nevolin, V.N.; Sipaylo, I.P.; Teterin, P.E.; Medvedeva, S.S.; Lebedinsky, Yu.Yu.; Zenkevich, A.V.

    2015-01-01

    In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu_2ZnSnS_4 (CZTS) thin films grown by reactive Pulsed Laser Deposition in H_2S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N_2 at the optimized conditions. - Highlights: • Cu_2ZnSnS_4 (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H_2S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N_2 effectively inhibits the formation of Sn_xS secondary phases.

  8. Rapid magnetic hardening by rapid thermal annealing in NdFeB-based nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Chu, K.-T.; Jin, Z Q; Chakka, Vamsi M; Liu, J P [Department of Physics, University of Texas at Arlington, Arlington, TX 76019 (United States)

    2005-11-21

    A systematic study of heat treatments and magnetic hardening of NdFeB-based melt-spun nanocomposite ribbons have been carried out. Comparison was made between samples treated by rapid thermal annealing and by conventional furnace annealing. Heating rates up to 200 K s{sup -1} were adopted in the rapid thermal processing. It was observed that magnetic hardening can be realized in an annealing time as short as 1 s. Coercivity of 10.2 kOe in the nanocomposites has been obtained by rapid thermal annealing for 1 s, and prolonged annealing did not give any increase in coercivity. Detailed results on the effects of annealing time, temperature and heating rate have been obtained. The dependence of magnetic properties on the annealing parameters has been investigated. Structural characterization revealed that there is a close correlation between magnetic hardening and nanostructured morphology. The coercivity mechanism was also studied by analysing the magnetization minor loops.

  9. Reactor pressure vessel thermal annealing

    International Nuclear Information System (INIS)

    Lee, A.D.

    1997-01-01

    The steel plates and/or forgings and welds in the beltline region of a reactor pressure vessel (RPV) are subject to embrittlement from neutron irradiation. This embrittlement causes the fracture toughness of the beltline materials to be less than the fracture toughness of the unirradiated material. Material properties of RPVs that have been irradiated and embrittled are recoverable through thermal annealing of the vessel. The amount of recovery primarily depends on the level of the irradiation embrittlement, the chemical composition of the steel, and the annealing temperature and time. Since annealing is an option for extending the service lives of RPVs or establishing less restrictive pressure-temperature (P-T) limits; the industry, the Department of Energy (DOE) and the Nuclear Regulatory Commission (NRC) have assisted in efforts to determine the viability of thermal annealing for embrittlement recovery. General guidance for in-service annealing is provided in American Society for Testing and Materials (ASTM) Standard E 509-86. In addition, the American Society of Mechanical Engineers (ASME) Code Case N-557 addresses annealing conditions (temperature and duration), temperature monitoring, evaluation of loadings, and non-destructive examination techniques. The NRC thermal annealing rule (10 CFR 50.66) was approved by the Commission and published in the Federal Register on December 19, 1995. The Regulatory Guide on thermal annealing (RG 1.162) was processed in parallel with the rule package and was published on February 15, 1996. RG 1.162 contains a listing of issues that need to be addressed for thermal annealing of an RPV. The RG also provides alternatives for predicting re-embrittlement trends after the thermal anneal has been completed. This paper gives an overview of methodology and recent technical references that are associated with thermal annealing. Results from the DOE annealing prototype demonstration project, as well as NRC activities related to the

  10. Combined Effect of Heating Rate and Microalloying Elements on Recrystallization During Annealing of Dual-Phase Steels

    Science.gov (United States)

    Bellavoine, Marion; Dumont, Myriam; Drillet, Josée; Hébert, Véronique; Maugis, Philippe

    2018-05-01

    Adjusting ferrite recrystallization kinetics during annealing is a way to control the final microstructure and thus the mechanical properties of advanced cold-rolled high-strength steels. Two strategies are commonly used for this purpose: adjusting heating rates and/or adding microalloying elements. The present work investigates the effect of heating rate and microalloying elements Ti, Nb, and Mo on recrystallization kinetics during annealing in various cold-rolled Dual-Phase steel grades. The use of combined experimental and modeling approaches allows a deeper understanding of the separate influence of heating rate and the addition of microalloying elements. The comparative effect of Ti, Nb, and Mo as solute elements and as precipitates on ferrite recrystallization is also clarified. It is shown that solute drag has the largest delaying effect on recrystallization in the present case and that the order of solute drag effectiveness of microalloying elements is Nb > Mo > Ti.

  11. The double-edged effects of annealing MgO underlayers on the efficient synthesis of single-wall carbon nanotube forests.

    Science.gov (United States)

    Tsuji, Takashi; Hata, Kenji; Futaba, Don N; Sakurai, Shunsuke

    2017-11-16

    Recently, the millimetre-scale, highly efficient synthesis of single-wall carbon nanotube (SWCNT) forests from Fe catalysts has been reported through the annealing of the magnesia (MgO) underlayer. Here, we report the double-edged effects of underlayer annealing on the efficiency and structure of the SWCNT forest synthesis through a temperature-dependent examination. Our results showed that the efficiency of the SWCNT forests sharply increased with increased underlayer annealing temperatures from 600 °C up to 900 °C due to a temperature-dependent structural modification, characterized by increased grain size and reduced defects, of the MgO underlayer. Beyond this temperature, the SWCNT fraction also decreased as a result of further structural modification of the MgO underlayer. This exemplifies the double-edged effects of annealing. Specifically, for underlayer annealing below 600 °C, the catalyst subsurface diffusion was found to limit the growth efficiency, and for excessively high underlayer annealing temperatures (>900 °C), catalyst coalescence/ripening led to the formation of double-wall carbon nanotubes. As a result, three distinct regions of synthesis were observed: (i) a "low yield" region below a threshold temperature (∼600 °C); (ii) an "increased yield" region from 600 to 900 °C, and (iii) a "saturation" region above 900 °C. The efficient SWCNT forest synthesis could only occur within a specific annealing temperature window as a result of this double-edged effects of underlayer annealing.

  12. Phase formation kinetics, hardness and magnetocaloric effect of sub-rapidly solidified LaFe11.6Si1.4 plates during isothermal annealing

    Science.gov (United States)

    Dai, Yuting; Xu, Zhishuai; Luo, Zhiping; Han, Ke; Zhai, Qijie; Zheng, Hongxing

    2018-05-01

    High-temperature phase transition behavior and intrinsic brittleness of NaZn13-type τ1 phase in La-Fe-Si magnetocaloric materials are two key problems from the viewpoint of materials production and practical applications. In the present work, the Johnson-Mehl-Avrami-Kolmogorov (JMAK) equation was introduced to quantitatively characterize the formation kinetics of τ1 phase in sub-rapidly solidified LaFe11.6Si1.4 plates during the isothermal annealing process. Avrami index was estimated to be 0.43 (∼0.5), which suggests that the formation of τ1 phase is in a diffusion-controlled one-dimensional growth mode. Meanwhile, it is found that the Vickers hardness as a function of annealing time for sub-rapidly solidified plates also agrees well with the JMAK equation. The Vickers hardness of τ1 phase was estimated to be about 754. Under a magnetic field change of 30 kOe, the maximum magnetic entropy change was about 22.31 J/(kg·K) for plates annealed at 1323 K for 48 h, and the effective magnetic refrigeration capacity reached 191 J/kg.

  13. Effect of annealing on electrical properties of plasmatron deposited ZnO films

    International Nuclear Information System (INIS)

    Joa, Sang Beom; Penkov, Oteksiy V.; Plaksin, Vadim Yu; Mansur, Rakib; Kim, Ji Hun; Lee, Heon Ju

    2009-01-01

    Transparent conductive zinc oxide (ZnO) has been extensively studied in recent several years because they have very interesting properties. Besides this, zinc oxide is non-poisonous, abundant and cheap material. ZnO films are employed in different applications like transparent conductive layers in solar cells, protective coatings and so on. Wide industrial application of the ZnO films requires of development of cheap, effective and scalable technology. Typically used technology like RF sputtering, pyrolysis and metal-organic CVD don't completely satisfy the industrial requirements. In our previous publications the new perspective ZnO deposition technology based DC Arc Plasmatron was described. This technology has several advantages (low cost, high deposition rate, low substrate temperature). Currently, films deposited using this technology has can be used only as protective or insulation coatings because of very high resistance. Applying of plasmatron technology in the microelectronics or solar cell production requires the improvement of electrical properties of the films. This can be achieved by optimization of deposition parameters, using of doping, or by post-deposition treatment such as annealing, or by combination of mentioned. It was shown that proposed technology can be used for the deposition of pure ZnO film with good electrical and optical properties. Proposed technology has several disadvantages which can be overcome in the near-term outlook

  14. Effect of substrate temperature and post annealing temperature on ZnO:Zn PLD thin film properties

    Science.gov (United States)

    Hasabeldaim, E.; Ntwaeaborwa, O. M.; Kroon, R. E.; Coetsee, E.; Swart, H. C.

    2017-12-01

    The pulsed laser deposition (PLD) substrate temperature and post-annealing temperature are effective methods to control the film optical and structural properties. The structure, morphology and optical properties of the deposited and post-annealed PLD ZnO:Zn films were studied. The films were deposited at different substrate temperatures of 50 °C, 200 °C and 400 °C. The films deposited at the substrate temperature of 50 °C and 200 °C were post-annealed in air at 400 °C and 600 °C for two hours. The films all had a highly preferential orientation with the hexagonal c-axis perpendicular to the substrate surface. The stress was found to be compressive stress with values -3.289 GPa, -4.864 GPa and -4.425 GPa for the film deposited at 50 °C, 200 °C and 400 °C, respectively. After post-annealing treatments, the stress of the films was almost completely released and stress-free films were obtained. The crystallite sizes were 19 nm, 25 nm and 39 nm, while the average particles sizes were 95 nm, 85 nm and 129 nm for the film deposited at 50 °C, 200 °C and 400 °C respectively. The crystallite sizes and particles sizes seemed to increase with the increase in the substrate temperature. Contrary to this, the change in crystallite sizes were inversely proportional to the particles size when increasing the post-annealing temperatures. Deconvoluted X-ray photoelectron spectroscopy peaks of the O1s binding energy region revealed that the films deposited at different substrate temperatures contained oxygen-related defects. Photoluminescence studies revealed that the films all emitted ultra-violet emission around 379 nm. The film deposited at 50 °C emitted a broad green emission centered at ∼524 nm. By increasing the substrate temperature up to 200 °C and 400 °C a new orange emission around 621 nm and 634 nm as well as a weak emission around 416 nm and 500 nm were observed, respectively. After post-annealing treatments, new bands over the visible region (blue, green

  15. Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure

    International Nuclear Information System (INIS)

    Reddy, V. Rajagopal; Reddy, M. Siva Pratap; Kumar, A. Ashok; Choi, Chel-Jong

    2012-01-01

    In the present work, thin film of polyvinyl alcohol (PVA) is fabricated on n-type InP substrate as an interfacial layer for electronic modification of Au/n-InP Schottky contact. The electrical characteristics of Au/PVA/n-InP Schottky diode are determined at annealing temperature in the range of 100–300 °C by current–voltage (I-V) and capacitance–voltage (C-V) methods. The Schottky barrier height and ideality factor (n) values of the as-deposited Au/PVA/n-InP diode are obtained at room temperature as 0.66 eV (I-V), 0.82 eV (C-V) and 1.32, respectively. Upon annealing at 200 °C in nitrogen atmosphere for 1 min, the barrier height value increases to 0.81 eV (I-V), 0.99 eV (C-V) and ideality factor decreases to 1.18. When the contact is annealed at 300 °C, the barrier height value decreases to 0.77 eV (I-V), 0.96 eV (C-V) and ideality factor increases to 1.22. It is observed that the interfacial layer of PVA increases the barrier height by the influence of the space charge region of the Au/n-InP Schottky junction. The discrepancy between Schottky barrier heights calculated from I-V and C-V measurements is also explained. Further, Cheung's functions are used to extract the series resistance of Au/PVA/n-InP Schottky diode. The interface state density as determined by Terman's method is found to be 1.04 × 10 12 and 0.59 × 10 12 cm −2 eV −1 for the as-deposited and 200 °C annealed Au/PVA/n-InP Schottky diodes. Finally, it is seen that the Schottky diode parameters changed with increase in the annealing temperature. - Highlights: ► Electrical properties of Au/polyvinyl alcohol (PVA)/n-InP structure have been studied. ► The Au/PVA/n-InP Schottky structure showed a good rectifying behavior. ► A maximum barrier height is obtained when the contact is annealed at 200 °C. ► Interface state density found to be 0.59 × 10 12 cm −2 eV −1 for 200 °C annealed contact. ► Significant effect of interface state density and series resistance on electrical

  16. All-dry transferred single- and few-layer MoS2 field effect transistor with enhanced performance by thermal annealing

    Science.gov (United States)

    Islam, Arnob; Lee, Jaesung; Feng, Philip X.-L.

    2018-01-01

    We report on the experimental demonstration of all-dry stamp transferred single- and few-layer (1L to 3L) molybdenum disulfide (MoS2) field effect transistors (FETs), with a significant enhancement of device performance by employing thermal annealing in moderate vacuum. Three orders of magnitude reduction in both contact and channel resistances have been attained via thermal annealing. We obtain a low contact resistance of 22 kΩ μm after thermal annealing of 1L MoS2 FETs stamp-transferred onto gold (Au) contact electrodes. Furthermore, nearly two orders of magnitude enhancement of field effect mobility are also observed after thermal annealing. Finally, we employ Raman and photoluminescence measurements to reveal the phenomena of alloying or hybridization between 1L MoS2 and its contacting electrodes during annealing, which is responsible for attaining the low contact resistance.

  17. Mechanical behavior of multipass welded joint during stress relief annealing

    International Nuclear Information System (INIS)

    Ueda, Yukio; Fukuda, Keiji; Nakacho, Keiji; Takahashi, Eiji; Sakamoto, Koichi.

    1978-01-01

    An investigation into mechanical behavior of a multipass welded joint of a pressure vessel during stress relief annealing was conducted. The study was performed theoretically and experimentally on idealized research models. In the theoretical analysis, the thermal elastic-plastic creep theory developed by the authors was applied. The behavior of multipass welded joints during the entire thermal cycle, from welding to stress relief annealing, was consistently analyzed by this theory. The results of the analysis show a good, fundamentally coincidence with the experimental findings. The outline of the results and conclusions is as follows. (1) In the case of the material (2 1/4Cr-1Mo steel) furnished in this study, the creep strain rate during stress relief annealing below 575 0 C obeys the strain-hardening creep law using the transient creep and the one above 575 0 C obeys the power creep law using the stational creep. (2) In the transverse residual stress (σsub(x)) distribution after annealing, the location of the largest tensile stress on the top surface is about 15 mm away from the toe of weld, and the largest at the cross section is just below the finishing bead. These features are similar to those of welding residual stresses. But the stress distribution after annealing is smoother than one from welding. (3) The effectiveness of stress relief annealing depends greatly on the annealing temperature. For example, most of residual stresses are relieved at the heating stage with a heating rate of 30 0 C/hr. to 100 0 C/hr. if the annealing temperature is 650 0 C, but if the annealing temperature is 550 0 C, the annealing is not effective even with a longer holding time. (4) In the case of multipass welding residual stresses studied in this paper, the behaviors of high stresses during annealing are approximated by ones during anisothermal relaxation. (auth.)

  18. Effects of thermal annealing on electrical characteristics of Cd/CdS/n-Si/Au-Sb sandwich structure

    International Nuclear Information System (INIS)

    Saglam, M.; Ates, A.; Guezeldir, B.; Astam, A.; Yildirim, M.A.

    2009-01-01

    In general, at the metal-semiconductor contacts, interfacial layers have been fabricated by different methods such as molecular beam epitaxy, metal organic chemical vapor deposition, sputtering and vacuum evaporation. However, all of these techniques have encountered various difficulties in the deposited films. Instead of these methods, since Successive Ionic Layer Adsorption and Reaction (SILAR) method is simple, fast, sensitive, and less costly to prepare interfacial layer, we have first employed this method in order to prepare Cd/CdS/n-Si/Au-Sb sandwich structure. For this reason, the CdS thin film has been directly formed on n-type Si substrate by means of SILAR method. The Cd/CdS/n-Si/Au-Sb sandwich structure has demonstrated clearly rectifying behaviour by the current-voltage (I-V) curves studied at room temperature. In order to observe the effect of the thermal annealing, this structure has been annealed at temperatures from 50 to 300 deg. C for 3 min in N 2 atmosphere. The characteristic parameters such as barrier height, ideality factor and series resistance of this structure have been calculated from the forward bias I-V characteristics as a function of annealing temperature with different methods. The values of n, Φ b and mean R s of the initial Cd/CdS/n-Si/Au-Sb sandwich structure were found to be 2.31, 0.790 eV and 1.86 kΩ respectively. After annealing at 300 deg. C, these values were changed to 1.89, 0.765 eV and 0.48 kΩ. It has been seen that the barrier height, ideality factor and series resistance have slightly changed with increasing annealing temperature up to 300 deg. C.

  19. Effects of annealing temperatures on the physicochemical properties of nickel-phosphorus deposits

    International Nuclear Information System (INIS)

    Bai, Allen; Hu, C.-C.

    2003-01-01

    The dependence of physicochemical properties, including microhardness, magnetism, morphology, crystalline information, roughness factor and hydrogen evolution ability, on the phosphorus content, varying from 0 to 28 atomic percentage (at.%), of Ni-P deposits with annealing in air at eight temperatures (i.e., 100, 200, 300, 400, 500, 600, 700 and 800 deg. C) were systematically compared. The microhardness reached a maximum at 400 deg. C due to the crystallization of Ni and Ni 3 P at 400 deg. C and the significant diffusion of Cu into the Ni-P deposit at temperatures ≥500 deg. C, confirmed by the depth profiles of Ni, P, Cu and O elements. The paramagnetism of Ni-P deposit was gradually transformed into ferromagnetism at 400 deg. C, attributable to the phase separation of Ni and Ni 3 P. The roughness factor, R a , of the deposits with P contents ≤12 at.% were increased with increasing the annealing temperature at temperatures a of the deposits with 17-28 at.% of P is approximately independent of the annealing temperature. The rate of hydrogen evolution decreased with increasing the annealing temperature because the specific activity (i/R a ) of the Ni-P deposits was decreased with increasing the annealing temperature

  20. Positron annihilation spectroscopy study on annealing effect of CuO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Jianjian; Wang, Jiaheng; Yang, Wei; Zhu, Zhejie; Wu, Yichu, E-mail: ycwu@whu.edu.cn [School of Physics and Technology, Hubei Key Laboratory of Nuclear Solid State Physics, Wuhan University (WHU), Wuhan (China)

    2016-03-15

    The microstructure and defects of CuO nanoparticles under isochronal annealing were investigated by positron annihilation spectroscopy (PAS), X-ray diffraction (XRD) and scanning electron microscope (SEM). XRD and SEM results indicated that the average grain sizes of CuO nanoparticles grew slowly below 800 °C, and then increased rapidly with the annealing temperature from 800 to 1000 °C. Positron lifetime analysis exhibited that positrons were mainly annihilated in mono-vacancies (V{sub Cu}, V{sub O}) and vacancy clusters when annealing from 200 to 800 °C. Furthermore, W-S plot of Doppler broadening spectra at different annealing temperatures found that the (W, S) points distributed on two different defect species, which suggested that V{sup −}{sub Cu} - V{sup +}{sub O} complexes were produced when the grains grew to bigger size after annealing above 800 °C, and positrons might annihilate at these complexes. (author)

  1. Structural, electrical and optical studies of SILAR deposited cadmium oxide thin films: Annealing effect

    International Nuclear Information System (INIS)

    Salunkhe, R.R.; Dhawale, D.S.; Gujar, T.P.; Lokhande, C.D.

    2009-01-01

    Successive ionic layer adsorption and reaction (SILAR) method has been successfully employed for the deposition of cadmium oxide (CdO) thin films. The films were annealed at 623 K for 2 h in an air and changes in the structural, electrical and optical properties were studied. From the X-ray diffraction patterns, it was found that after annealing, H 2 O vapors from as-deposited Cd(O 2 ) 0.88 (OH) 0.24 were removed and pure cubic cadmium oxide was obtained. The as-deposited film consists of nanocrystalline grains of average diameter about 20-30 nm with uniform coverage of the substrate surface, whereas for the annealed film randomly oriented morphology with slight increase in the crystallite size has been observed. The electrical resistivity showed the semiconducting nature with room temperature electrical resistivity decreased from 10 -2 to 10 -3 Ω cm after annealing. The decrease in the band gap energy from 3.3 to 2.7 eV was observed after the annealing

  2. Annealing effect on the microstructure modification and tribological properties of amorphous carbon nitride films

    Science.gov (United States)

    Wang, Zhou; Wang, Chengbing; Wang, Qi; Zhang, Junyan

    2008-10-01

    The influences of thermal annealing on the microstructural and tribological properties of amorphous carbon nitride films were investigated. X-ray photoelectron spectroscopy, Raman spectroscopy, and Fourier transform infrared spectrometer were utilized to characterize bond configuration and chemical state of the films. The results indicated that at low annealing temperatures (200 and 300 °C), the volatile species and surface contamination are easily dissociated without obvious bulk modification; while at high annealing temperatures (400 and 500 °C), the microstructure of carbon nitride films changed and favored a graphitization process, which indicated the growth of more graphitic film structures. The faint Raman signal of C≡N decreased with annealing temperature (TA) and completely disappeared at TA of 500 °C, indicating that nitrile bonds were thermal unstable under high temperature. Surprisingly, the tribological properties of the films showed a remarkably decreasing in friction coefficient as the TA increased; it is attributed to the graphitization of carbon nitride films during thermal annealing, which favored transfer film formation between the carbon nitride films and counterface materials. The transfer films benefit the decrease in coefficient of friction.

  3. Effects of annealing temperature in a metal alloy nano-dot memory

    International Nuclear Information System (INIS)

    Lee, Jung Min; Lee, Gae Hun; Song, Yun Heub; Bea, Ji Cheol; Tanaka, Tetsu

    2011-01-01

    The annealing temperature dependence of the capacitance-voltage (C-V) characteristic has been studied in a metal-oxide semiconductor structure containing FePt nano-dots. Several in-situ annealing temperatures from 400 to ∼700 .deg. C in a high vacuum ambience (under 1 x 10 -5 Pa) were evaluated in view of the cell's characteristics and its reliability. Here, we demonstrate that the annealing temperature is significant for memory performance in an alloy metal nano-dot structure. A higher in-situ temperature provides better retention and a more reliable memory window. In the sample with an in-situ annealing condition of 700 .deg. C for 30 min, a memory window of 9.2 V at the initial stage was obtained, and a memory window of 6.2 V after 10 years was estimated, which is reliable for a non-volatile memory. From these results, the annealing condition for an alloy metal nano-dot memory is one of the critical parameters for the memory characteristics, and should be optimized for better memory performance.

  4. Effect of isochronal annealing on photoluminescence properties of Mn-implanted GaN

    International Nuclear Information System (INIS)

    Majid, Abdul; Ali, Akbar

    2009-01-01

    Mn ions were implanted into metal organic chemical vapour deposition (MOCVD)-grown GaN with dose ranging from 10 14 to 5x10 16 cm -2 . Isochronal annealing at 800 and 850 deg. C has been carried out after implantation of the samples. Photoluminescence measurements were carried out on the implanted samples before and after annealing. A peak found at 3.34 eV in the spectra of implanted samples after annealing at 850 deg. C is attributed to the stacking faults. Blue and green luminescence bands have been observed suppressed and an oxygen-related peak appeared at 3.44 eV in the PL spectra. The suppression of blue and green luminescence bands has been assigned to dissociation of V Ga O N complex. Near-band-edge (NBE) peak exhibited a blue shift after 800 deg. C anneal and then red shift to restore its original energy position when annealed at 850 deg. C

  5. Effect of isochronal annealing on photoluminescence properties of Mn-implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)], E-mail: abdulmajid40@yahoo.com; Ali, Akbar [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan)], E-mail: akbar@qau.edu.pk

    2009-01-15

    Mn ions were implanted into metal organic chemical vapour deposition (MOCVD)-grown GaN with dose ranging from 10{sup 14} to 5x10{sup 16} cm{sup -2}. Isochronal annealing at 800 and 850 deg. C has been carried out after implantation of the samples. Photoluminescence measurements were carried out on the implanted samples before and after annealing. A peak found at 3.34 eV in the spectra of implanted samples after annealing at 850 deg. C is attributed to the stacking faults. Blue and green luminescence bands have been observed suppressed and an oxygen-related peak appeared at 3.44 eV in the PL spectra. The suppression of blue and green luminescence bands has been assigned to dissociation of V{sub Ga}O{sub N} complex. Near-band-edge (NBE) peak exhibited a blue shift after 800 deg. C anneal and then red shift to restore its original energy position when annealed at 850 deg. C.

  6. Principal and secondary luminescence lifetime components in annealed natural quartz

    International Nuclear Information System (INIS)

    Chithambo, M.L.; Ogundare, F.O.; Feathers, J.

    2008-01-01

    Time-resolved luminescence spectra from quartz can be separated into components with distinct principal and secondary lifetimes depending on certain combinations of annealing and measurement temperature. The influence of annealing on properties of the lifetimes related to irradiation dose and temperature of measurement has been investigated in sedimentary quartz annealed at various temperatures up to 900 deg. C. Time-resolved luminescence for use in the analysis was pulse stimulated from samples at 470 nm between 20 and 200 deg. C. Luminescence lifetimes decrease with measurement temperature due to increasing thermal effect on the associated luminescence with an activation energy of thermal quenching equal to 0.68±0.01eV for the secondary lifetime but only qualitatively so for the principal lifetime component. Concerning the influence of annealing temperature, luminescence lifetimes measured at 20 deg. C are constant at about 33μs for annealing temperatures up to 600 0 C but decrease to about 29μs when the annealing temperature is increased to 900 deg. C. In addition, it was found that lifetime components in samples annealed at 800 deg. C are independent of radiation dose in the range 85-1340 Gy investigated. The dependence of lifetimes on both the annealing temperature and magnitude of radiation dose is described as being due to the increasing importance of a particular recombination centre in the luminescence emission process as a result of dynamic hole transfer between non-radiative and radiative luminescence centres

  7. Effects of annealing and deforming temperature on microstructure and deformation characteristics of Ti-Ni-V shape memory alloy

    Energy Technology Data Exchange (ETDEWEB)

    He Zhirong, E-mail: hezhirong01@163.com [School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong 723003 (China); Liu Manqian [School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong 723003 (China)

    2012-07-25

    Highlights: Black-Right-Pointing-Pointer The deformation behaviors of annealed Ti-50.8Ni-0.5V shape memory alloy (SMA) were given. Black-Right-Pointing-Pointer The effect of annealing temperature on microstructure and deformation characteristics of Ti-50.8Ni-0.5V SMA was shown. Black-Right-Pointing-Pointer The effect of deforming temperature on deformation characteristics of Ti-50.8Ni-0.5V SMA was given. - Abstract: Effects of annealing temperature T{sub an} and deforming temperature T{sub d} on microstructure and deformation characteristics of Ti-50.8Ni-0.5V (atomic fraction, %) shape memory alloy were investigated by means of optical microscopy and tensile test. With increasing T{sub an}, the microstructure of Ti-50.8Ni-0.5V alloy wire changes from fiber style to equiaxed grain, and the recrystallization temperature of the alloy is about 580 Degree-Sign C; the critical stress for stress-induced martensite {sigma}{sub M} of the alloy decreases first and then increases, and the minimum value 382 MPa is got at T{sub an} = 450 Degree-Sign C; the residual strain {epsilon}{sub R} first increases, then decreases, and then increases, and its maximum value 2.5% is reached at T{sub an} = 450 Degree-Sign C. With increasing T{sub d}, a transformation from shape memory effect (SME) to superelasticity (SE) occurs in the alloy annealed at different temperatures, and the SME {yields} SE transformation temperature was affected by T{sub an}; the {sigma}{sub M} of the alloy increases linearly; the {epsilon}{sub R} of the alloy annealed at 350-600 Degree-Sign C decreases first and then tends to constant, while that of the alloy annealed at 650 Degree-Sign C and 700 Degree-Sign C decreases first and then increases. To get an excellent SE at room temperature for Ti-50.8Ni-0.5V alloy, T{sub an} should be 500-600 Degree-Sign C.

  8. Inert gas annealing effect in solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors

    Science.gov (United States)

    Lee, Seungwoon; Jeong, Jaewook

    2017-08-01

    In this paper, the annealing effect of solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs), under ambient He (He-device), is systematically analyzed by comparison with those under ambient O2 (O2-device) and N2 (N2-device), respectively. The He-device shows high field-effect mobility and low subthreshold slope owing to the minimization of the ambient effect. The degradation of the O2- and N2-device performances originate from their respective deep acceptor-like and shallow donor-like characteristics, which can be verified by comparison with the He-device. However, the three devices show similar threshold voltage instability under prolonged positive bias stress due to the effect of excess oxygen. Therefore, annealing in ambient He is the most suitable method for the fabrication of reference TFTs to study the various effects of the ambient during the annealing process in solution-processed a-IGZO TFTs.

  9. Recombination luminescence in irradiated silicon - Effects of thermal annealing and lithium impurity.

    Science.gov (United States)

    Johnson, E. S.; Compton, W. D.

    1971-01-01

    Use of luminescence in irradiated silicon to determine the thermal stability of the defects responsible for the recombination. It is found that the defect responsible for the zero-phonon line at 0.97 eV has an annealing behavior similar to that of the divacancy and that the zero-phonon line at 0.79 eV anneals in a manner similar to the G-15 or K-center. Annealing at temperatures up to 500 C generates other defects whose luminescence is distinct from that seen previously. Addition of lithium to the material produces defects with new characteristic luminescence. Of particular importance is a defect with a level at E sub g -1.045 eV.

  10. The effect of non-contact heating (microwave irradiation) and contact heating (annealing process) on properties and performance of polyethersulfone nanofiltration membranes

    International Nuclear Information System (INIS)

    Mansourpanah, Y.; Madaeni, S.S.; Rahimpour, A.; Farhadian, A.

    2009-01-01

    In this work the effect of microwave irradiation on morphology and performance of polyethersulfone (PES) membranes was investigated. The membranes were prepared with 20 wt.% of PES by phase inversion method. N,N-dimethylformamide (DMF) and mixture of water and ethyl alcohol (90/10 vol.%) were employed as solvent and coagulant respectively. Polyvinylpirrolidone (PVP) with the concentration of 2 wt.% was selected as pore former. The effects of irradiation time (10, 30, 60, 90, 120 s) and microwave power (180, 360, 720 and 900 W) on structure and performance of membranes were studied. Increasing the irradiation time and power caused variation in permeate flux and ion rejection. Moreover, the effects of annealing processes (60, 70, 80 deg. C) were studied. Transmembrane pressure was selected around 1.5 MPa for all experiments. Scanning electron microscope (SEM) and atomic force microscope (AFM) were employed to describe the surface morphology of the prepared membranes. The effect of microwave irradiation time in different power revealed alterations in membrane surface morphology and AFM images represented that surface parameters (such as surface roughness) have been changed. The membrane exhibited moderate rejection (47%) and low permeate flux (4.5 kg/m 2 h) at 80 deg. C for NaCl solution. The SEM images indicate that the dense skin layer is formed at 80 deg. C annealing.

  11. Effect of annealing on magnetic properties and structure of Fe-Ni based magnetic microwires

    International Nuclear Information System (INIS)

    Zhukova, V.; Korchuganova, O.A.; Aleev, A.A.; Tcherdyntsev, V.V.; Churyukanova, M.; Medvedeva, E.V.; Seils, S.; Wagner, J.; Ipatov, M.; Blanco, J.M.; Kaloshkin, S.D.; Aronin, A.; Abrosimova, G.; Orlova, N.

    2017-01-01

    Highlights: • High domain wall mobility of Fe-Ni-based microwires. • Enhancement of domain wall velocity and mobility in Fe-rich microwires after annealing. • Observation of areas enriched by Si and depleted by B after annealing. • Phase separation in annealed Fe-Ni based microwires in metallic nucleus and near the interface layer. - Abstract: We studied the magnetic properties and domain wall (DW) dynamics of Fe 47.4 Ni 26.6 Si 11 B 13 C 2 and Fe 77.5 Si 7.5 B 15 microwires. Both samples present rectangular hysteresis loop and fast magnetization switching. Considerable enhancement of DW velocity is observed in Fe 77.5 Si 7.5 B 15 , while DW velocity of samples Fe 47.4 Ni 26.6 Si 11 B 13 C 2 is less affected by annealing. The other difference is the magnetic field range of the linear region on dependence of domain wall velocity upon magnetic field: in Fe 47.4 Ni 26.6 Si 11 B 13 C 2 sample is considerably shorter and drastically decreases after annealing. We discussed the influence of annealing on DW dynamics considering different magnetoelastic anisotropy of studied microwires and defects within the amorphous state in Fe 47.4 Ni 26.6 Si 11 B 13 C 2 . Consequently we studied the structure of Fe 47.4 Ni 26.6 Si 11 B 13 C 2 sample using X-ray diffraction and the atom probe tomography. The results obtained using the atom probe tomography supports the formation of the B-depleted and Si-enriched precipitates in the metallic nucleus of Fe-Ni based microwires.

  12. Annealing effects on the structural, optical and magnetic properties of Mn implanted GaN

    International Nuclear Information System (INIS)

    Majid, Abdul; Ali, Akbar; Sharif, Rehana; Husnain, G

    2009-01-01

    Mn ions were implanted into GaN thin films with six doses ranging from 10 14 to 5 x 10 16 cm -2 and the samples were subsequently annealed isochronically in three steps at 800, 850 and 900 deg. C. Structural, optical and magnetic properties of the implanted samples were studied after each annealing. X-ray diffraction measurements exhibited new peaks on the lower angle side of the main GaN peak which are attributed to the implantation induced damage as well as the formation of a GaMnN phase. A dose dependent decrease in the optical band gap and an increase in the Urbach tail were observed from optical transmission measurements. The clear magnetic hysteresis loops were recorded by the magnetometer which revealed the room temperature ferromagnetic ordering in all the implanted samples. Unusual behaviour in the magnetic measurements was observed when saturation magnetic moment decreased in all the samples with an increase in annealing temperature from 850 to 900 deg. C. This is explained by the out-diffusion of Mn atoms from the samples during high temperature annealing. Annealing temperature of 850 deg. C for Mn implanted GaN has been suggested as suitable since the samples annealed at this temperature exhibited maximum M s and minimum Urbach energy. Bound magnetic polarons are suggested to be the origin of room temperature ferromagnetic exchange in the samples. XPS measurements indicated that the Mn ions have been incorporated into the wurtzite structure of the host lattice by substituting the Ga sites.

  13. Annealing effects on the structural, optical and magnetic properties of Mn implanted GaN

    Energy Technology Data Exchange (ETDEWEB)

    Majid, Abdul; Ali, Akbar [Advance Materials Physics Laboratory, Physics Department, Quaid-i-Azam University, Islamabad (Pakistan); Sharif, Rehana [Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Husnain, G, E-mail: abdulmajid40@yahoo.co, E-mail: akbar@qau.edu.p [Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871 (China)

    2009-07-07

    Mn ions were implanted into GaN thin films with six doses ranging from 10{sup 14} to 5 x 10{sup 16} cm{sup -2} and the samples were subsequently annealed isochronically in three steps at 800, 850 and 900 deg. C. Structural, optical and magnetic properties of the implanted samples were studied after each annealing. X-ray diffraction measurements exhibited new peaks on the lower angle side of the main GaN peak which are attributed to the implantation induced damage as well as the formation of a GaMnN phase. A dose dependent decrease in the optical band gap and an increase in the Urbach tail were observed from optical transmission measurements. The clear magnetic hysteresis loops were recorded by the magnetometer which revealed the room temperature ferromagnetic ordering in all the implanted samples. Unusual behaviour in the magnetic measurements was observed when saturation magnetic moment decreased in all the samples with an increase in annealing temperature from 850 to 900 deg. C. This is explained by the out-diffusion of Mn atoms from the samples during high temperature annealing. Annealing temperature of 850 deg. C for Mn implanted GaN has been suggested as suitable since the samples annealed at this temperature exhibited maximum M{sub s} and minimum Urbach energy. Bound magnetic polarons are suggested to be the origin of room temperature ferromagnetic exchange in the samples. XPS measurements indicated that the Mn ions have been incorporated into the wurtzite structure of the host lattice by substituting the Ga sites.

  14. Annealing effect on superconductivity of La2CuO4 single crystals

    International Nuclear Information System (INIS)

    Tanaka, I.; Takahashi, H.; Kojima, H.

    1992-01-01

    This paper reports that La 2 CuO 4 single crystals grown at an oxygen pressure of 0.2 MPa by TSFZ method are superconducting below 32 K, and show a semiconducting behavior in nonsuperconducting state. The single crystals of La 2 CuO 4 are changed from superconductors to semiconductors by annealing in argon, and are returned to superconductors by annealing at ambient pressure of oxygen. Therefore, superconductivity of the La 2 CuO 4 single crystals is due to excess oxygen

  15. Annealing effect on superconductivity of La2CuO4 single crystals

    International Nuclear Information System (INIS)

    Tanaka, L.; Takahashi, H.; Kojima, H.

    1992-01-01

    La 2 CuO 4 single crystals grown at an oxygen pressure of 0.2 MPa by TSFZ method are superconducting below 32 K, and show a semiconducting behavior in nonsuperconducting state. The single crystals of La 2 CuO 4 are changed from superconductors to semiconductors by annealing in argon, and are returned to superconductors by annealing at ambient pressure of oxygen. Therefore, superconductivity of the La 2 CuO 4 single crystals is due to excess oxygen. (orig.)

  16. Annealing effect and photovoltaic properties of nano-ZnS/textured p-Si heterojunction

    Science.gov (United States)

    Ji, Liang-Wen; Hsiao, Yu-Jen; Tang, I.-Tseng; Meen, Teen-Hang; Liu, Chien-Hung; Tsai, Jenn-Kai; Wu, Tien-Chuan; Wu, Yue-Sian

    2013-11-01

    The preparation and characterization of heterojunction solar cell with ZnS nanocrystals synthesized by chemical bath deposition method were studied in this work. The ZnS nanocrystals were characterized by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Lower reflectance spectra were found as the annealing temperature of ZnS film increased on the textured p-Si substrate. It was found that the power conversion efficiency (PCE) of the AZO/ZnS/textured p-Si heterojunction solar cell with an annealing temperature of 250°C was η = 3.66%.

  17. Annealing Effects on the Magnetization of Co-Ni-B Amorphous Nanoparticles

    International Nuclear Information System (INIS)

    Vargas, J.M.

    2001-01-01

    Chemically prepared (Co x Ni 1-x ) 1 00 -y B y (x=0.5, 0.75, 1; y∼30) amorphous fine particles were characterized by x-ray diffraction, DTA and TGA, and in-situ magnetic measurement as a function of annealing temperature in an inert atmosphere.Magnetic measurement performed in as prepared and ∼150C degree annealed samples show an increase of the saturation magnetization and magnetic moment after thermal tretment.Room temperature magnetization increases by factors of ∼3 in average.These measurements may indicate a local re-ordering of the amorphous phase at temperatures much lower than the full crystallization temperature

  18. Effect of annealing on the structure of chemically synthesized SnO_2 nanoparticles

    International Nuclear Information System (INIS)

    Singh, Kulwinder; Kumar, Akshay; Kumar, Virender; Vij, Ankush; Kumari, Sudesh; Thakur, Anup

    2016-01-01

    Tin oxide (SnO_2) nanoparticles have been synthesized by co-precipitation method. The synthesized nanoparticles were characterized by X-ray diffraction (XRD) and Raman spectroscopy. XRD analysis confirmed the single phase formation of SnO_2 nanoparticles. The Raman shifts showed the typical feature of the tetragonal phase of the as-synthesized SnO_2 nanoparticles. At low annealing temperature, a strong distortion of the crystalline structure and high degree of agglomeration was observed. It is concluded that the crystallinity of SnO_2 nanoparticles improves with the increase in annealing temperature.

  19. Effect of annealing on the composition and structure of TiC and TaC powders

    International Nuclear Information System (INIS)

    Vavrda, J.; Blazhikova, J.

    1979-01-01

    Effect of annealing (1300-2000 deg C) upon lattice parameters and composition of TiC and TaC powders has been investigated. It is established that the lowest deviation from stoichiometric composition of TiC and TaC is the result of annealing the samples, placed in graphite crucibles, in the medium of pure argon. It is shown, that the processes of decarbonizing and crystal defect formation produce decisive effect upon recrystallization of titanium and tantalum carbides. Using the methods of X-ray diffraction and scanning electron microscopy significant difference is detected in structural changes in TiC at high temperature heat treatment compared to recrystallization processes in metals. Singled out are the following stages of the process: carbide decarbonizing and arizing of lattice distortions connected with it; progressing disorientation of mosaic blocks, connected with the increase in stresses of the second kind and subsequent gragmentation of big crystals; relief in fragmentated crystals

  20. Annealing temperature effect on the properties of mercury-doped TiO{sub 2} films prepared by sol-gel dip-coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Mechiakh, R., E-mail: raouf_mechiakh@yahoo.fr [Departement de Medecine, Faculte de Medecine, Universite Hadj Lakhdar Batna, Batna (Algeria); Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia); Ben Sedrine, N. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia); Karyaoui, M. [Departement de Medecine, Faculte de Medecine, Universite Hadj Lakhdar Batna, Batna (Algeria); Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia); Chtourou, R. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia)

    2011-04-15

    This work presents the annealing temperature effect on the properties of mercury (Hg)-doped titanium dioxide (TiO{sub 2}). Thin films and polycrystalline powders have been prepared by sol-gel process. The structure, surface morphology and optical properties, as a function of the annealing temperature, have been studied by atomic force microscopy (AFM), Raman, reflectance and ellipsometric spectroscopies. In order to determine the transformation points, we have analyzed the xerogel-obtained powder by differential scanning calorimetry (DSC). Raman spectroscopy shows the crystalline anatase and rutile phases for the films annealed at 400 deg. C and 1000 deg. C respectively. The AFM surface morphology results indicate that the particle size increases from 14 to 57 nm by increasing the annealing temperature. The complex index and the optical band gap (E{sub g}) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreases by increasing the annealing temperature.

  1. Annealing temperature effect on the properties of mercury-doped TiO2 films prepared by sol-gel dip-coating technique

    International Nuclear Information System (INIS)

    Mechiakh, R.; Ben Sedrine, N.; Karyaoui, M.; Chtourou, R.

    2011-01-01

    This work presents the annealing temperature effect on the properties of mercury (Hg)-doped titanium dioxide (TiO 2 ). Thin films and polycrystalline powders have been prepared by sol-gel process. The structure, surface morphology and optical properties, as a function of the annealing temperature, have been studied by atomic force microscopy (AFM), Raman, reflectance and ellipsometric spectroscopies. In order to determine the transformation points, we have analyzed the xerogel-obtained powder by differential scanning calorimetry (DSC). Raman spectroscopy shows the crystalline anatase and rutile phases for the films annealed at 400 deg. C and 1000 deg. C respectively. The AFM surface morphology results indicate that the particle size increases from 14 to 57 nm by increasing the annealing temperature. The complex index and the optical band gap (E g ) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreases by increasing the annealing temperature.

  2. The Effect of Thermal Annealing on the Optical Properties of a-SiC:H Films Produced by DC Sputtering Methods: I. Graphite Target Case.

    Directory of Open Access Journals (Sweden)

    Lusitra Munisa

    2003-04-01

    Full Text Available A study of the annealing effect on optical properties and disorder of hydrogenated amorphous silicon carbon (a-SiC:H films was undertaken. The films were prepared by sputtering technique using graphite target and silicon wafer in argon and hydrogen gas mixture, and then characterized by uv-vis (ultra violet-visible spectroscopy before and after annealing. Index of refraction n and absorption coefficient α of films have been determined from measurements of transmittance. The optical gap show small variation with annealing temperature, increasing with increasing annealing temperature up to 500 °C. An increase of annealing temperature leads to reduced film density and the amorphous network disorder. The experimental results are discussed in terms of deposition condition and compared to other experimental results.

  3. Effect of annealing temperature on the structure and coke-resistance of nickel–iron bimetallic catalytic layer for in situ methane steam reforming in SOFC operation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xuehua; Zhang, Hanqing; Zhao, DanDan; Tang, Dian; Zhang, Teng, E-mail: teng_zhang@fzu.edu.cn

    2014-11-15

    Highlights: • An intermediate FeNi{sub 3} phase forms in all N{sub i0.75}Fe{sub 0.25} catalysts in present work. • The catalyst annealed at 705 °C has smallest calculated surface energy. • The catalyst annealed at 705 °C also exhibits the best coke resistance in methane. • The cell with catalyst layer annealed at 705 °C has the best stability in methane. - Abstract: In this paper, the effect on coke formation of adding a Ni{sub 0.75}Fe{sub 0.25} catalyst layer to the anode side of a fuel cell running on methane is investigated. The formation of an intermediate FeNi{sub 3} phase can be observed in catalysts annealed at different temperatures. The catalyst annealed at 705 °C has the smallest calculated surface energy and grain size among all catalysts annealed at different temperatures. In addition, the O{sub 2}-TPO profiles and Raman spectra of spent anode material reveal that the catalyst annealed at 705 °C has the best coke resistance among all catalysts. Moreover, the cell with catalyst layer annealed at 705 °C, under a current density of 600 mA cm{sup −2} at 650 °C, experiences a decrease of 10% after operating in methane for 260 min, which is much more stable than that without catalyst layer (a decrease of 50%)

  4. Growth of different phases and morphological features of MnS thin films by chemical bath deposition: Effect of deposition parameters and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Hannachi, Amira, E-mail: amira.hannachi88@gmail.com; Maghraoui-Meherzi, Hager

    2017-03-15

    Manganese sulfide thin films have been deposited on glass slides by chemical bath deposition (CBD) method. The effects of preparative parameters such as deposition time, bath temperature, concentration of precursors, multi-layer deposition, different source of manganese, different complexing agent and thermal annealing on structural and morphological film properties have been investigated. The prepared thin films have been characterized using the X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). It exhibit the metastable forms of MnS, the hexagonal γ-MnS wurtzite phase with preferential orientation in the (002) plane or the cubic β-MnS zinc blende with preferential orientation in the (200) plane. Microstructural studies revealed the formation of MnS crystals with different morphologies, such as hexagons, spheres, cubes or flowers like. - Graphical Abstract: We report the preparation of different phases of manganese sulfide thin films (γ, β and α-MnS) by chemical bath deposition method. The effects of deposition parameters such as deposition time and temperature, concentrations of precursors and multi-layer deposition on MnS thin films structure and morphology were investigated. The influence of thermal annealing under nitrogen atmosphere at different temperature on MnS properties was also studied. Different manganese precursors as well as different complexing agent were also used. - Highlights: • γ and β-MnS films were deposited on substrate using the chemical bath deposition. • The effect of deposition parameters on MnS film properties has been investigated. • Multi-layer deposition was also studied to increase film thickness. • The effect of annealing under N{sub 2} at different temperature was investigated.

  5. Influence of alloying and secondary annealing on anneal hardening ...

    Indian Academy of Sciences (India)

    Unknown

    Influence of alloying and secondary annealing on anneal hardening effect at sintered copper alloys. SVETLANA NESTOROVIC. Technical Faculty Bor, University of Belgrade, Bor, Yugoslavia. MS received 11 February 2004; revised 29 October 2004. Abstract. This paper reports results of investigation carried out on sintered ...

  6. Simulated annealing model of acupuncture

    Science.gov (United States)

    Shang, Charles; Szu, Harold

    2015-05-01

    The growth control singularity model suggests that acupuncture points (acupoints) originate from organizers in embryogenesis. Organizers are singular points in growth control. Acupuncture can cause perturbation of a system with effects similar to simulated annealing. In clinical trial, the goal of a treatment is to relieve certain disorder which corresponds to reaching certain local optimum in simulated annealing. The self-organizing effect of the system is limited and related to the person's general health and age. Perturbation at acupoints can lead a stronger local excitation (analogous to higher annealing temperature) compared to perturbation at non-singular points (placebo control points). Such difference diminishes as the number of perturbed points increases due to the wider distribution of the limited self-organizing activity. This model explains the following facts from systematic reviews of acupuncture trials: 1. Properly chosen single acupoint treatment for certain disorder can lead to highly repeatable efficacy above placebo 2. When multiple acupoints are used, the result can be highly repeatable if the patients are relatively healthy and young but are usually mixed if the patients are old, frail and have multiple disorders at the same time as the number of local optima or comorbidities increases. 3. As number of acupoints used increases, the efficacy difference between sham and real acupuncture often diminishes. It predicted that the efficacy of acupuncture is negatively correlated to the disease chronicity, severity and patient's age. This is the first biological - physical model of acupuncture which can predict and guide clinical acupuncture research.

  7. Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer

    Energy Technology Data Exchange (ETDEWEB)

    Dikareva, N. V., E-mail: dnat@ro.ru; Vikhrova, O. V.; Zvonkov, B. N. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Malekhonova, N. V. [Lobachevsky State University of Nizhni Novgorod (Russian Federation); Nekorkin, S. M. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Pirogov, A. V.; Pavlov, D. A. [Lobachevsky State University of Nizhni Novgorod (Russian Federation)

    2015-01-15

    Heterostructures containing single GaAsSb/GaAs quantum wells and bilayer GaAsSb/InGaAs quantum wells are produced by metal-organic vapor-phase epitaxy at atmospheric pressure. The growth temperature of the quantum-confined layers is 500–570°C. The structural quality of the samples and the quality of heterointerfaces of the quantum wells are studied by the high-resolution transmission electron microscopy of cross sections. The emission properties of the heterostructures are studied by photoluminescence measurements. The structures are subjected to thermal annealing under conditions chosen in accordance with the temperature and time of growth of the upper cladding p-InGaP layer during the formation of GaAs/InGaP laser structures with an active region containing quantum-confined GaAsSb layers. It is found that such heat treatment can have a profound effect on the emission properties of the active region, only if a bilayer GaAsSb/InGaAs quantum well is formed.

  8. Effects of Thermal Annealing Upon the Morphology of Polymer-Fullerene Blends

    KAUST Repository

    Verploegen, Eric

    2010-08-18

    Grazing incidence X-ray scattering (GIXS) is used to characterize the morphology of poly(3-hexylthiophene) (P3HT)-phenyl-C61-butyric acid methyl ester (PCBM) thin film bulk heterojunction (BHJ) blends as a function of thermal annealing temperature, from room temperature to 220 °C. A custom-built heating chamber for in situ GIXS studies allows for the morphological characterization of thin films at elevated temperatures. Films annealed with a thermal gradient allow for the rapid investigation of the morphology over a range of temperatures that corroborate the results of the in situ experiments. Using these techniques the following are observed: the melting points of each component; an increase in the P3HT coherence length with annealing below the P3HT melting temperature; the formation of well-oriented P3HT crystallites with the (100) plane parallel to the substrate, when cooled from the melt; and the cold crystallization of PCBM associated with the PCBM glass transition temperature. The incorporation of these materials into BHJ blends affects the nature of these transitions as a function of blend ratio. These results provide a deeper understanding of the physics of how thermal annealing affects the morphology of polymer-fullerene BHJ blends and provides tools to manipulate the blend morphology in order to develop high-performance organic solar cell devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Double-step annealing and ambient effects on phosphorus implanted emitters in silicon

    International Nuclear Information System (INIS)

    Koji, T.; Tseng, W.F.; Mayer, J.W.; Suganuma, T.

    1979-01-01

    Emitters of npn silicon bipolar transistors have been made by a phosphorus implantation at 50 keV P + to a dose of 1 x 10 16 cm -2 . This was followed by high temperature processes to reduce lattice disorder, to drive-in the phosphorus atoms, and to form oxide layers. The first process step was carried out by using single- and double-step anneals in various ambients (dry N 2 , dry 0 2 and steam) while the drive-in and oxidation steps were common for all structures. Electrical measurements on emitter/base leakage current, low frequency (popcorn) noise and current gain showed that the annealing ambient had a major influence. The transistors with implanted emitters annealed in a dry N 2 ambient are comparable to commercial ones with thermally-diffused emitters. Transmission electron microscopy observations on samples annealed in steam ambients revealed dislocations extending into the sidewall of the emitter/base junction. This sidewell penetration of dislocations is the main origin of the degradation of the emitter/base junction characteristics. (author)

  10. Effect of thermal annealing on optical properties of implanted GaAs

    NARCIS (Netherlands)

    Kulik, M; Komarov, FF; Maczka, D

    GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3 x 10(16) cm(-2) indium dose was totally damaged and its

  11. Chemical Annealing of Zinc Tetraphenylporphyrin Films: Effects on Film Morphology and Organic Photovoltaic Performance

    KAUST Repository

    Trinh, Cong; Whited, Matthew T.; Steiner, Andrew; Tassone, Christopher J.; Toney, Michael F.; Thompson, Mark E.

    2012-01-01

    We present a chemical annealing process for organic thin films. In this process, a thin film of a molecular material, such as zinc tetraphenylporphyrin (ZnTPP), is exposed to a vapor of nitrogen-based ligand (e.g., pyrazine, pz, and triazine, tz

  12. Effects of Thermal Annealing Upon the Morphology of Polymer-Fullerene Blends

    KAUST Repository

    Verploegen, Eric; Mondal, Rajib; Bettinger, Christopher J.; Sok, Seihout; Toney, Michael F.; Bao, Zhenan

    2010-01-01

    Grazing incidence X-ray scattering (GIXS) is used to characterize the morphology of poly(3-hexylthiophene) (P3HT)-phenyl-C61-butyric acid methyl ester (PCBM) thin film bulk heterojunction (BHJ) blends as a function of thermal annealing temperature, from room temperature to 220 °C. A custom-built heating chamber for in situ GIXS studies allows for the morphological characterization of thin films at elevated temperatures. Films annealed with a thermal gradient allow for the rapid investigation of the morphology over a range of temperatures that corroborate the results of the in situ experiments. Using these techniques the following are observed: the melting points of each component; an increase in the P3HT coherence length with annealing below the P3HT melting temperature; the formation of well-oriented P3HT crystallites with the (100) plane parallel to the substrate, when cooled from the melt; and the cold crystallization of PCBM associated with the PCBM glass transition temperature. The incorporation of these materials into BHJ blends affects the nature of these transitions as a function of blend ratio. These results provide a deeper understanding of the physics of how thermal annealing affects the morphology of polymer-fullerene BHJ blends and provides tools to manipulate the blend morphology in order to develop high-performance organic solar cell devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. The effect of annealing on structural, optical and photosensitive properties of electrodeposited cadmium selenide thin films

    Directory of Open Access Journals (Sweden)

    Somnath Mahato

    2017-06-01

    Full Text Available Cadmium selenide (CdSe thin films have been deposited on indium tin oxide coated glass substrate by simple electrodeposition method. X-ray Diffraction (XRD studies identify that the as-deposited CdSe films are highly oriented to [002] direction and they belong to nanocrystalline hexagonal phase. The films are changed to polycrystalline structure after annealing in air for temperatures up to 450 °C and begin to degrade afterwards with the occurrence of oxidation and porosity. CdSe completely ceases to exist at higher annealing temperatures. CdSe films exhibit a maximum absorbance in the violet to blue-green region of an optical spectrum. The absorbance increases while the band gap decreases with increasing annealing temperature. Surface morphology also shows that the increase of the annealing temperature caused the grain growth. In addition, a number of distinct crystals is formed on top of the film surface. Electrical characteristics show that the films are photosensitive with a maximum sensitivity at 350 °C.

  14. Effect of anneal and quench on the nature of the dominant acceptors in ZnTe

    International Nuclear Information System (INIS)

    Bensahel, D.; Magnea, N.; Pautrat, J.L.; Pfister, J.C.; Revoil, L.

    1978-01-01

    Anneal and quench studies on high purity ZnTe have shown the dominant role of impurities and their solubilities as functions of stoichiometrical conditions. The role of 'b' acceptor, related to lithium, 'g' acceptor, related to silver, and 'a' acceptor of unknown nature is reported

  15. Influence of thermal annealing on the memory effect in MIS structures containing crystalline Si nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Meier, Sebastian; Brueggemann, R. [Institut fuer Physik, Carl von Ossietzky Universitaet Oldenburg, 26111 Oldenburg (Germany); Kirilov, Kiril [Department of Solid State Physics and Microelectronics, Sofia Univ. (Bulgaria); Levi, Zelma; Manolov, E. [Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Nedev, N. [Instituto de Ingenieria Universidad Autonoma de Baja California, Benito Juarez Blvd., s/n, C.P. 21280, Mexicali, Baja California, Mexico (Mexico)

    2007-07-01

    Silicon nanocrystals embedded in a SiO{sub 2} matrix are fabricated by thermal annealing of Metal/SiO{sub 2}/SiO{sub x}/c-Si structures (x=1.15) at 1000 C in N{sub 2} atmosphere for 30 or 60 min. High frequency C-V measurements demonstrate that both types of sample can be charged negatively or positively by applying a positive or negative bias voltage to the gate. The clockwise hysteresis windows of 30 and 60 min annealed samples are about 7 and 5.5 V for the {+-}12 V scanning range (E{sub ox}={+-}2.4 MV/cm), respectively. Although the samples annealed for 60 min have a smaller hysteresis window, they have two important advantages compared to the 30 min annealed ones: a lower defect density at the c-Si wafer/SiO{sub 2} interface and a smaller value of the fixed oxide charge close to this interface.

  16. Tailoring giant magnetoimpedance effect of Co-based microwires for optimum efficiency by self-designed square-wave pulse current annealing

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jingshun, E-mail: jingshun_liu@163.com [School of Materials Science and Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China); Du, Zhaoxin [School of Materials Science and Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China); Jiang, Sida; Shen, Hongxian [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Li, Ze [School of Materials Science and Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China); Xing, Dawei [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Ma, Wen [School of Materials Science and Engineering, Inner Mongolia University of Technology, Hohhot 010051 (China); Sun, Jianfei [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2015-07-01

    Herein, we systematically studied the effect of a novel square-wave pulse current annealing (SPCA) on the magnetic properties and microstructure of Co-based melt-extracted amorphous wires, and efficiently tailored the related experimental parameters by using numerical calculation of transient temperature rise during SPCA process. We obtained the optimal SPCA treatment (at 50 Hz, with amplitude of 90 mA for 480 s) can remarkably enhance the GMI property of as-prepared wires. At 10 MHz, the maximum GMI ratio [ΔZ/Z{sub 0}]{sub max} and maxima response sensitivity ξ{sub max} of SPCA-treated wire increases to 202.60% and 305.74%/Oe, which is nearly two times and 1.5 times of 104.80% and 208.14%/Oe for as-cast wire, respectively. Especially, at 5 MHz, [ΔZ/Z{sub 0}]{sub max} of SPCA-treated wire increases to 185.81%, which is 2.5 times of 73.69% for as-cast wire, and ξ{sub max} of SPCA-treated wire increases to 346.65%/Oe by less than two times of 190.16%/Oe for as-cast wire. From mictrostructural perspective, the notably observed role of atomic order orientation regimes and circular magnetic domain during stress releasing or structural relaxation by the co-action of high-density pulse magnetic field energy and thermal activation energy determines the optimum efficiency of SPCA, further to enhance circumferential permeability. In conclusion, SPCA treatment is expected to effectively improve GMI property of microwires, which can be used as sensitive materials for potential sensor application in detecting weak magnetic field. - Highlights: • Annealing parameters are optimized by transient temperature rising calculation. • SPCA as a novel annealing treatment has larger GMI ratio and field sensitivity. • GMI effect is generally related to annealed microstructures identified by XRD. • Domain observed by MFM to explain the enhanced GMI property for SPCA-ed wires. • Results indicate SPCA-ed wires are useful for potential GMI sensor applications.

  17. Application of annealing for extension of WWER vessel lives

    International Nuclear Information System (INIS)

    Badanin, V.; Dragunow, Yu.G.; Fedorov, V.; Gorynin, I.; Nickolaev, V.

    1992-01-01

    The safe operation of nuclear power plants (NPP) is dependent upon the assurance that the reactor pressure vessel will not fail in a brittle manner when the effects of radiation embrittlement are taken into account. The recovery of the properties of the irradiated materials is an important way of extending the operating life of a reactor vessel. The intent of this paper is to demonstrate the efficiency of thermal annealing for the recovery of reactor vessel material properties and to present the implications for extended service life. In order to substantiate the application of annealing to the extensior of the service life of vessels, detailed investigations were conducted which involved thermal annealing temperature and time, fast neutron fluence, and metallurgical factors (i.e. impurity contents) on the recovery of properties after the annealing of irradiated materials. Similar studies were continued to determine predictive methods for radiation embrittlement after repeated annealings. In May 1987 the first pilot annealing of a commercial reactor vessel (Novo-Voronezhskaya, III, NPP) was performed. The development of the annealing equipment and investigations performed to test the annealing process proved successful, and an improved safe operation for the reactor vessel was thus atttained providing for an extended service life. (orig.)

  18. Effect of subsequent tension and annealing on microstructure evolution and strength enhancement of friction stir welded Mg alloys

    International Nuclear Information System (INIS)

    Xin, Renlong; Sun, Liyun; Liu, Dejia; Zhou, Zheng; Liu, Qing

    2014-01-01

    Friction stir welded (FSW) Mg alloys normally exhibit a lower yield strength compared with the base materials, which is a drawback for their application as structure materials. In this study, subsequent tension along the transverse direction (TD) and then annealing were applied on FSW AZ31 alloys to modify the microstructure and texture in weld zone and to improve the joint strength. The results showed that by subsequent tension ∼4.5% strain along TD and then annealing, the yield strength (YS) could be greatly enhanced for the FSW AZ31 alloys. Specifically the YS was improved from ∼86 to ∼177 MPa by subsequent 4.5% tension and then reduced to ∼156 MPa after annealing. For the initial joint sample, fracture occurred in the stir zone (SZ) side during the transverse tensile test. But after subsequent tension, all the samples fractured in the base materials (BMs) whether subjected to annealing or not. The microstructure and texture evolutions after subsequent tension and annealing were examined by electron backscatter diffraction (EBSD) to understand the underlining mechanisms for the improved mechanical properties. It revealed that a lot of {10−12} extension twins were generated in the SZ side by 4.5% tension along TD, which significantly refined the grains in the SZ side and rotated the grains from soft to hard orientations for the transverse tensile test. Therefore, the formation of {10−12} twin lamellae had significant hardening effects on further transverse tensile tests. Schmid factor (SF) analysis revealed that the texture change by subsequent tension had much more impact on the activation of {10−12} extension twinning than basal slip for the transverse tensile test. This might affect the competition of extension twinning and basal slip and reduce the deformation incompatibility in the SZ side, which was beneficial for the improvement of mechanical properties. Nevertheless the present study showed that it was efficient to improve the YS of FSW Mg

  19. Effect of annealing on the magnetic properties and microstructure of NdFeB/Tb multilayered films

    Energy Technology Data Exchange (ETDEWEB)

    Li, D S; Suzuki, S; Liu, W F; Horikawa, T; Machida, K [Center for Advanced Science and Innovation, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)], E-mail: machida@casi.osaka-u.ac.jp

    2009-02-01

    The magnetic properties of NdFeB/Tb multilayered films annealed at 773-1273K were investigated by evaluating the effect of Tb spacer layer and comparing them with those of NdFeB single layered films. The as-deposited NdFeB/Tb film with a amorphous structure was crystallized at the higher annealing temperature than 923K and Nd-rich phases were formed at 1073 K, meanwhile the coercivity increased substantially. By observations of the microstructure, Tb element was found to diffuse into the Nd-rich phases to form a Tb-enriched phase around the Nd{sub 2}Fe{sub 14}B primary phase particles in the multilayered films.

  20. Effect of annealing on the magnetic properties and microstructure of NdFeB/Tb multilayered films

    International Nuclear Information System (INIS)

    Li, D S; Suzuki, S; Liu, W F; Horikawa, T; Machida, K

    2009-01-01

    The magnetic properties of NdFeB/Tb multilayered films annealed at 773-1273K were investigated by evaluating the effect of Tb spacer layer and comparing them with those of NdFeB single layered films. The as-deposited NdFeB/Tb film with a amorphous structure was crystallized at the higher annealing temperature than 923K and Nd-rich phases were formed at 1073 K, meanwhile the coercivity increased substantially. By observations of the microstructure, Tb element was found to diffuse into the Nd-rich phases to form a Tb-enriched phase around the Nd 2 Fe 14 B primary phase particles in the multilayered films.

  1. Effect of annealing on microstructure evolution in CoFeB/MgO/CoFeB heterostructures by positron annihilation

    Science.gov (United States)

    Zhao, Chong-Jun; Lu, Xiang-An; Zhao, Zhi-Duo; Li, Ming-Hua; Zhang, Peng; Wang, Bao-Yi; Cao, Xing-Zhong; Zhang, Jing-Yan; Yu, Guang-Hua

    2013-09-01

    As one of the most powerful tools for investigation of defects of materials, positron annihilation spectroscopy was employed to explore the thermal effects on the film microstructure evolution in CoFeB/MgO/CoFeB heterostructures. It is found that high annealing temperature can drive vacancy defects agglomeration and ordering acceleration in the MgO barrier. Meanwhile, another important type of defects, vacancy clusters, which are formed via the agglomeration of vacancy defects in the MgO barrier after annealing, still exists inside the MgO barrier. All these behaviors in the MgO barrier could potentially impact the overall performance in MgO based magnetic tunnel junctions.

  2. Effects of post-irradiation annealing on the transformation behavior of Ti-Ni alloys

    International Nuclear Information System (INIS)

    Kimura, A.; Tsuruga, H.; Morimura, T.; Misawa, T.; Miyazaki, S.

    1993-01-01

    Recovery processes of martensitic transformation of neutron irradiated Ti-50.0, 50.5 and 51.0 at.%Ni alloys during post-irradiation annealing were investigated by means of differential scanning calorimetry (DSC), tensile tests and transmission electron microscope (TEM) observations. Neutron irradiation up to a fluence of 1.2x10 24 n/cm 2 at 333 K suppressed the martensitic transformation as well as the stress-induced martensitic transformation of these alloys above 150 K. The TEM observations revealed that the disordered zones containing small defect clusters in high density were formed in the neutron irradiated Ti-Ni alloys. The DSC measurements also showed that the post-irradiation annealing caused recovery of the transformation of which the progress depended on the annealing temperature and period. A significant retardation of the recovery was recognized in the Ti-51.0 at.%Ni alloy in comparison with the Ti-50.0 at.%Ni alloy. From the shifts in the transformation temperature upon isothermal annealing at various annealing temperatures, the activation energies of the recovery process of the transformation in the neutron irradiated Ti-50.0 and 51.0 at.%Ni alloys were evaluated by a cross-cut method to be 1.2 eV and 1.5 eV, respectively. The recovery of the transformation was ascribed to the re-ordering resulting from decomposition of vacancy clusters, and those obtained values of the activation energy were considered to be the sum of the migration energy of vacancy and the binding energy of vacancy-vacancy cluster. The retardation of the recovery in the Ti-51.0 at%Ni alloy was interpreted in terms of large binding energy in this alloy due to the off-stoichiometry. (author)

  3. Effect of Annealing Temperature on the Water Contact Angle of PVD Hard Coatings

    Science.gov (United States)

    Yang, Yu-Sen; Cho, Ting-Pin

    2013-01-01

    Various PVD (physical vapor deposition) hard coatings including nitrides and metal-doped diamond-like carbons (Me-DLC) were applied in plastic injection and die-casting molds to improve wear resistance and reduce sticking. In this study, nitrides hcp-AlN (hexagonal close-packed AlN), Cr2N, (CrAl)2N) and Me-DLC (Si-DLC and Cr-DLC) coatings were prepared using a closed field unbalanced magnetron reactive sputtering system. The coatings were annealed in air for 2 h at various temperatures, after which the anti-sticking properties were assessed using water contact angle (WCA) measurements. The as-deposited hcp-AlN, Cr2N and (CrAl)2N coatings exhibit hydrophobic behavior and exhibit respective WCAs of 119°, 106° and 101°. The as-deposited Si-DLC and Cr-DLC coatings exhibit hydrophilic behavior and exhibit respective WCAs of 74° and 88°. The annealed Cr2N and (CrAl)2N coatings exhibit hydrophobic behavior with higher WCAs, while the annealed hcp-AlN, Si-DLC and Cr-DLC coatings are hydrophilic. The increased WCA of the annealed Cr2N and (CrAl)2N coatings is related to their crystal structure and increased roughness. The decreased WCA of the annealed hcp-AlN, Si-DLC and Cr-DLC coatings is related to their crystal structures and has little correlation with roughness. PMID:28811440

  4. Effect of Annealing Temperature on the Water Contact Angle of PVD Hard Coatings.

    Science.gov (United States)

    Yang, Yu-Sen; Cho, Ting-Pin

    2013-08-07

    Various PVD (physical vapor deposition) hard coatings including nitrides and metal-doped diamond-like carbons (Me-DLC) were applied in plastic injection and die-casting molds to improve wear resistance and reduce sticking. In this study, nitrides hcp-AlN (hexagonal close-packed AlN), Cr₂N, (CrAl)₂N) and Me-DLC (Si-DLC and Cr-DLC) coatings were prepared using a closed field unbalanced magnetron reactive sputtering system. The coatings were annealed in air for 2 h at various temperatures, after which the anti-sticking properties were assessed using water contact angle (WCA) measurements. The as-deposited hcp-AlN, Cr₂N and (CrAl)₂N coatings exhibit hydrophobic behavior and exhibit respective WCAs of 119°, 106° and 101°. The as-deposited Si-DLC and Cr-DLC coatings exhibit hydrophilic behavior and exhibit respective WCAs of 74° and 88°. The annealed Cr₂N and (CrAl)₂N coatings exhibit hydrophobic behavior with higher WCAs, while the annealed hcp-AlN, Si-DLC and Cr-DLC coatings are hydrophilic. The increased WCA of the annealed Cr₂N and (CrAl)₂N coatings is related to their crystal structure and increased roughness. The decreased WCA of the annealed hcp-AlN, Si-DLC and Cr-DLC coatings is related to their crystal structures and has little correlation with roughness.

  5. Effects of annealing conditions on the photoelectrochemical properties of dye-sensitized solar cells made with ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Lanlan; Li, Renjie; Fan, Ke [College of Chemistry and Molecular Science, Wuhan University, Wuhan 430072 (China); Peng, Tianyou [College of Chemistry and Molecular Science, Wuhan University, Wuhan 430072 (China); State Key Laboratory of Rare Earth Materials Chemistry and Applications, Peking University, Beijing 100871 (China)

    2010-05-15

    Dye-sensitized solar cells (DSSCs) were fabricated by using porous ZnO electrodes derived from home-made ZnO nanoparticles. Electrochemical impedance spectra and open-circuit photovoltage decay curves measurements were performed to investigate the photoelectrochemical characteristics of ZnO films annealed at different temperatures. The experimental results indicate that the effects of the bulk traps and the surface states within the ZnO films on the recombination processes of the photoinjected electrons in DSSCs depend on the annealing temperature. The DSSC based on the ZnO electrode annealed at 400 C exhibits an optimal energy conversion efficiency of 3.92% under the illumination of one sun simulated sunlight because the farthest decrease in the effects of both bulk traps and surface states at this film can maintain a lower charge recombination probability. This result indicates that the ZnO film electrode has promising application in the field of DSSCs, and the optimization of porous film fabrication condition is efficient for the improvement of ZnO-based DSSC's performances. (author)

  6. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO{sub 2} matrix

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Nupur, E-mail: n1saxena@gmail.com; Kumar, Pragati; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

    2015-05-15

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO{sub 2} matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO{sub 2} is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters.

  7. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO2 matrix

    International Nuclear Information System (INIS)

    Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

    2015-01-01

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO 2 matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO 2 is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters

  8. Modeling the effects of ion dose and crystallographic symmetry on the morphological evolution of embedded precipitates under thermal annealing

    International Nuclear Information System (INIS)

    Li, Kun-Dar

    2014-01-01

    Highlights: •We model the faceted precipitates formation by post-implantation annealing. •The anisotropic interfacial energy and diffusion kinetics play crucial roles. •The evolutions of faceted precipitates, including Ostwald ripening, are revealed. •The mechanism of the nucleation and growth is based on the atomic diffusion. •The effects of ion dose and crystallographic symmetry are also investigated. -- Abstract: Thermal annealing is one of the most common techniques to synthesize embedded precipitates by ion implantation process. In this study, an anisotropic phase field model is presented to investigate the effects of ion dose and crystallographic symmetry on the morphological formation and evolution of embedded precipitates during post-implantation thermal annealing process. This theoretical model provides an efficient numerical approach to understand the phenomenon of faceted precipitates formation by ion implantation. As a theoretical analysis, the interfacial energy and diffusion kinetics play prominent roles in the mechanism of atomic diffusion for the precipitates formation. With a low ion dose, faceted precipitates are developed by virtue of the anisotropic interfacial energy. As an increase of ion dose, connected precipitates with crystallographic characters on the edge are appeared. For a high ion dose, labyrinth-like nanostructures of precipitates are produced and the characteristic morphology of crystallographic symmetry becomes faint. These simulation results for the morphological evolutions of embedded precipitates by ion implantation are corresponded with many experimental observations in the literatures. The quantitative analyses of the simulations are also well described the consequence of precipitates formation under different conditions

  9. Effect of annealing on silicon heterojunction solar cells with textured ZnO:Al as transparent conductive oxide

    Directory of Open Access Journals (Sweden)

    Roca i Cabarrocas P.

    2012-07-01

    Full Text Available We report on silicon heterojunction solar cells using textured aluminum doped zinc oxide (ZnO:Al as a transparent conductive oxide (TCO instead of flat indium tin oxide. Double side silicon heterojunction solar cell were fabricated by radio frequency plasma enhanced chemical vapor deposition on high life time N-type float zone crystalline silicon wafers. On both sides of these cells we have deposited by radio frequency magnetron sputtering ZnO:Al layers of thickness ranging from 800 nm to 1400 nm. These TCO layers were then textured by dipping the samples in a 0.5% hydrochloric acid. External quantum efficiency as well as I-V under 1 sun illumination measurements showed an increase of the current for the cells using textured ZnO:Al. The cells were then annealed at 150 °C, 175 °C and 200 °C during 30 min in ambient atmosphere and characterized at each annealing step. The results show that annealing has no impact on the open circuit voltage of the devices but that up to a 175 °C it enhances their short circuit current, consistent with an overall enhancement of their spectral response. Our results suggest that ZnO:Al is a promising material to increase the short circuit current (Jsc while avoiding texturing the c-Si substrate.

  10. Effect of Annealing and Operating Substrate Temperature on Methanol Gas Sensing Properties of SnO2 Thin Films

    Directory of Open Access Journals (Sweden)

    Priyanka Kakoty

    2017-04-01

    Full Text Available SnO2 based sensing nano-material have been synthesized by simple chemical route using Stannic (IV chloride-pentahydrate (SnCl4.5H2O as precursor. The structural properties of the prepared SnO2 nano-particles annealed at different temperatures have been characterized by X-ray diffraction (XRD analysis. The XRD patterns showed pure bulk SnO2 with a tetragonal rutile structure in the nano-powders. By increasing the annealing temperatures, the size of crystals were seen to increase, the diffraction peaks were found narrower and the intensity was higher. SnO2 films prepared by spin coating the prepared nano-material solution was tested at different temperatures for methanol vapour and it showed that the film prepared from SnO2 powder annealed at 500 0C shows the higher sensitivity to methanol vapour at 150 0C substrate temperature with significantly low response and recovery time.

  11. Effects of anodizing conditions and annealing temperature on the morphology and crystalline structure of anodic oxide layers grown on iron

    Science.gov (United States)

    Pawlik, Anna; Hnida, Katarzyna; Socha, Robert P.; Wiercigroch, Ewelina; Małek, Kamilla; Sulka, Grzegorz D.

    2017-12-01

    Anodic iron oxide layers were formed by anodization of the iron foil in an ethylene glycol-based electrolyte containing 0.2 M NH4F and 0.5 M H2O at 40 V for 1 h. The anodizing conditions such as electrolyte composition and applied potential were optimized. In order to examine the influence of electrolyte stirring and applied magnetic field, the anodic samples were prepared under the dynamic and static conditions in the presence or absence of magnetic field. It was shown that ordered iron oxide nanopore arrays could be obtained at lower anodizing temperatures (10 and 20 °C) at the static conditions without the magnetic field or at the dynamic conditions with the applied magnetic field. Since the as-prepared anodic layers are amorphous in nature, the samples were annealed in air at different temperatures (200-500 °C) for a fixed duration of time (1 h). The morphology and crystal phases developed after anodization and subsequent annealing were characterized using field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The results proved that the annealing process transforms the amorphous layer into magnetite and hematite phases. In addition, the heat treatment results in a substantial decrease in the fluorine content and increase in the oxygen content.

  12. Effects of vacuum annealing on the optical and electrical properties of p-type copper-oxide thin-film transistors

    International Nuclear Information System (INIS)

    Sohn, Joonsung; Song, Sang-Hun; Kwon, Hyuck-In; Nam, Dong-Woo; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik

    2013-01-01

    We have investigated the effects of vacuum annealing on the optical and electrical properties of the p-type copper-oxide thin-film transistors (TFTs). The vacuum annealing of the copper-oxide thin-film was performed using the RF magnetron sputter at various temperatures. From the x-ray diffraction and UV-vis spectroscopy, it is demonstrated that the high-temperature vacuum annealing reduces the copper-oxide phase from CuO to Cu 2 O, and increases the optical transmittance in the visible part of the spectrum. The fabricated copper-oxide TFT does not exhibit the switching behavior under low-temperature vacuum annealing conditions. However, as the annealing temperature increases, the drain current begins to be modulated by a gate voltage, and the TFT exhibits a high current on–off ratio over 10 4 as the vacuum annealing temperature increases over 450 °C. These results show that the vacuum annealing process can be an effective method of simultaneously improving the optical and electrical performances in p-type copper-oxide TFTs. (paper)

  13. Dependence of annealing time on structural and morphological properties of Ca(Zr0.05Ti0.95)O3 thin films

    International Nuclear Information System (INIS)

    Cavalcante, L.S.; Simoes, A.Z.; Orlandi, M.O.; Santos, M.R.M.C.; Varela, J.A.; Longo, E.

    2008-01-01

    Ca(Zr 0.05 Ti 0.95 )O 3 (CZT) thin films were prepared by the polymeric precursor method by spin-coating process. The films were deposited on Pt(1 1 1)/Ti/SiO 2 /Si(1 0 0) substrates and annealed at 650 deg. C for 2, 4, and 6 h in oxygen atmosphere. Structure and morphology of the CZT thin films were characterized by the X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FT-IR), atomic force microscopy (AFM) and field-emission scanning electron microscopy (FEG-SEM). XRD revealed that the film is free of secondary phases and crystallizes in the orthorhombic structure. The annealing time influences the grain size, lattices parameter and in the film thickness

  14. Effect of annealing on magnetic properties and structure of Fe-Ni based magnetic microwires

    Energy Technology Data Exchange (ETDEWEB)

    Zhukova, V. [Dpto. de Física de Materiales, Fac. Químicas, UPV/EHU, 20018 San Sebastian (Spain); Dpto. de Física Aplicada, EUPDS, UPV/EHU, 20018 San Sebastian (Spain); Korchuganova, O.A.; Aleev, A.A. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409 Moscow (Russian Federation); Tcherdyntsev, V.V.; Churyukanova, M. [National University of Science and Technology «MISIS», 119049 Moscow (Russian Federation); Medvedeva, E.V. [Institute of Electrophysics, Ural Branch, Russian Academy of Sciences 620016 Yekaterinburg (Russian Federation); Seils, S.; Wagner, J. [Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology, 76131 Karlsruhe (Germany); Ipatov, M. [Dpto. de Física de Materiales, Fac. Químicas, UPV/EHU, 20018 San Sebastian (Spain); Dpto. de Física Aplicada, EUPDS, UPV/EHU, 20018 San Sebastian (Spain); Blanco, J.M. [Dpto. de Física Aplicada, EUPDS, UPV/EHU, 20018 San Sebastian (Spain); Kaloshkin, S.D. [National University of Science and Technology «MISIS», 119049 Moscow (Russian Federation); Aronin, A. [National University of Science and Technology «MISIS», 119049 Moscow (Russian Federation); Insitute of Solid State Physics, Moscow Region, 142432 Chernogolovka (Russian Federation); Abrosimova, G.; Orlova, N. [Insitute of Solid State Physics, Moscow Region, 142432 Chernogolovka (Russian Federation); and others

    2017-07-01

    Highlights: • High domain wall mobility of Fe-Ni-based microwires. • Enhancement of domain wall velocity and mobility in Fe-rich microwires after annealing. • Observation of areas enriched by Si and depleted by B after annealing. • Phase separation in annealed Fe-Ni based microwires in metallic nucleus and near the interface layer. - Abstract: We studied the magnetic properties and domain wall (DW) dynamics of Fe{sub 47.4}Ni{sub 26.6}Si{sub 11}B{sub 13}C{sub 2} and Fe{sub 77.5}Si{sub 7.5}B{sub 15} microwires. Both samples present rectangular hysteresis loop and fast magnetization switching. Considerable enhancement of DW velocity is observed in Fe{sub 77.5}Si{sub 7.5}B{sub 15}, while DW velocity of samples Fe{sub 47.4}Ni{sub 26.6}Si{sub 11}B{sub 13}C{sub 2} is less affected by annealing. The other difference is the magnetic field range of the linear region on dependence of domain wall velocity upon magnetic field: in Fe{sub 47.4}Ni{sub 26.6}Si{sub 11}B{sub 13}C{sub 2} sample is considerably shorter and drastically decreases after annealing. We discussed the influence of annealing on DW dynamics considering different magnetoelastic anisotropy of studied microwires and defects within the amorphous state in Fe{sub 47.4}Ni{sub 26.6}Si{sub 11}B{sub 13}C{sub 2}. Consequently we studied the structure of Fe{sub 47.4}Ni{sub 26.6}Si{sub 11}B{sub 13}C{sub 2} sample using X-ray diffraction and the atom probe tomography. The results obtained using the atom probe tomography supports the formation of the B-depleted and Si-enriched precipitates in the metallic nucleus of Fe-Ni based microwires.

  15. Effects of pre-irradiation annealing at high temperature on optical absorption and electron paramagnetic resonance of natural pumpellyite mineral

    International Nuclear Information System (INIS)

    Javier-Ccallata, Henry; Filho, Luiz Tomaz; Sartorelli, Maria L.; Watanabe, Shigueo

    2013-01-01

    Highlights: •Natural pumpellyite mineral presents superposition bands around 900 and 1060 nm due Fe 2+ and Fe 3+ . •High temperature annealing influences the EPR and OA spectra. •The behavior of EPR line for 800 and 900 °C can be attributed to forbidden dd transitions due the Fe 3+ . -- Abstract: Natural silicate mineral of pumpellyite, Ca 2 MgAl 2 (SiO 4 )(Si 2 O 7 )(OH) 2 ·(H 2 O), point group A2/m, has been studied concerning high temperature annealing and γ-radiation effects on Optical Absorption (OA) and Electron Paramagnetic Resonance (EPR) properties. Chemical analysis revealed that besides Si, Al, Ca and Mg, other oxides i.e., Fe, Mn, Na, K, Ti and P are present in the structure as impurities. OA measurements of natural and annealed pumpellyite revealed several bands in the visible region due to spin forbidden transitions of Fe 2+ and Fe 3+ . The behaviour of bands around 900 and 1060 nm, with pre-annealing and γ radiation dose, indicating a transition Fe 2+ → e − + Fe 3+ . On the other hand, EPR measurements reveal six lines of Mn 2+ , and satellites due to hyperfine interaction, superimposed on the signal of Fe 3+ around of g = 2. For heat treatment from 800 °C the signal grows significantly and for 900 °C a strong signal of Fe 3+ hides all Mn 2+ lines. The strong growth of this signal indicates that the transitions are due to Fe 3+ dipole–dipole interactions

  16. Effect of reversion annealing on the formation of nano/ultrafine grained structure in 201 austenitic stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Moallemi, Mohammad; Najafizadeh, Abbas; Kermanpur, Ahmad [Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of); Rezaee, Ahad, E-mail: a.rezaee@ma.iut.ac.ir [Department of Materials Engineering, Isfahan University of Technology, Isfahan 84156-83111 (Iran, Islamic Republic of)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer The secondary increase in the martensite content after reversion annealing. Black-Right-Pointing-Pointer Formation of thermally induced martensite due to carbide precipitation. Black-Right-Pointing-Pointer The smallest average grain size of 70 nm is achieved by annealing at 850 Degree-Sign C for 15 s. Black-Right-Pointing-Pointer A fully austenitic structure with grain size of 100 nm and 1370 MPa yield strength. - Abstract: The formation of nano/ultrafine grain structure in a 201 austenitic stainless steel was investigated by the martensite thermomechanical treatment. Cast ingots were first homogenized, then hot-forged and solution-annealed to reduce the initial grain size. Cold rolling was then conducted down to 90% reduction in thickness, followed by reversion annealing at a temperature in the range of 1023-1173 K for 15-1800 s. The effect of reversion parameters on grain refinement was investigated. The resulting microstructures were characterized by a scanning electron microscopy equipped with X-ray energy-dispersive spectrometer, an X-ray diffractometer and a Feritscope. The hardness was measured by the Vickers method. The results show that a nano/ultrafine-grained structure formed in the initial stages of the reversion, but significant grain growth took place during the entire course of reversion. Initially lowered, the volume fraction of martensite increased again during the reversion treatment due to carbide precipitation. A fully austenitic nano grained 201 stainless steel with the average grain size of 100 nm was produced, possessing a yield strength of about 1370 MPa.

  17. Effects of pre-irradiation annealing at high temperature on optical absorption and electron paramagnetic resonance of natural pumpellyite mineral

    Energy Technology Data Exchange (ETDEWEB)

    Javier-Ccallata, Henry, E-mail: henrysjc@gmail.com [Escuela de Ingeniería Electrónica y Telecomunicaciones, Universidad Alas Peruanas Filial Arequipa, Urb. D. A. Carrión G-14, J. L. Bustamante y Rivero, Arequipa (Peru); Laboratório de Sistemas Nanoestruturados, Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis, Santa Catarina (Brazil); Filho, Luiz Tomaz [Departamento de Física Nuclear, Instituto de Física, Universidade de São Paulo, Rua do Matão, travessa R, 187, CEP 05508-900 São Paulo, SP (Brazil); Faculdade de Tecnologia e Ciências Exatas, Universidade São Judas Tadeu, Rua Taquari 546, São Paulo, SP (Brazil); Sartorelli, Maria L. [Laboratório de Sistemas Nanoestruturados, Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis, Santa Catarina (Brazil); Watanabe, Shigueo [Departamento de Física Nuclear, Instituto de Física, Universidade de São Paulo, Rua do Matão, travessa R, 187, CEP 05508-900 São Paulo, SP (Brazil)

    2013-09-15

    Highlights: •Natural pumpellyite mineral presents superposition bands around 900 and 1060 nm due Fe{sup 2+}and Fe{sup 3+}. •High temperature annealing influences the EPR and OA spectra. •The behavior of EPR line for 800 and 900 °C can be attributed to forbidden dd transitions due the Fe{sup 3+}. -- Abstract: Natural silicate mineral of pumpellyite, Ca{sub 2}MgAl{sub 2}(SiO{sub 4})(Si{sub 2}O{sub 7})(OH){sub 2}·(H{sub 2}O), point group A2/m, has been studied concerning high temperature annealing and γ-radiation effects on Optical Absorption (OA) and Electron Paramagnetic Resonance (EPR) properties. Chemical analysis revealed that besides Si, Al, Ca and Mg, other oxides i.e., Fe, Mn, Na, K, Ti and P are present in the structure as impurities. OA measurements of natural and annealed pumpellyite revealed several bands in the visible region due to spin forbidden transitions of Fe{sup 2+} and Fe{sup 3+}. The behaviour of bands around 900 and 1060 nm, with pre-annealing and γ radiation dose, indicating a transition Fe{sup 2+} → e{sup −} + Fe{sup 3+}. On the other hand, EPR measurements reveal six lines of Mn{sup 2+}, and satellites due to hyperfine interaction, superimposed on the signal of Fe{sup 3+} around of g = 2. For heat treatment from 800 °C the signal grows significantly and for 900 °C a strong signal of Fe{sup 3+} hides all Mn{sup 2+} lines. The strong growth of this signal indicates that the transitions are due to Fe{sup 3+} dipole–dipole interactions.

  18. Fabrication of zinc indium oxide thin films and effect of post annealing on structural, chemical and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Vipin Kumar, E-mail: vipinjain7678@gmail.com [Institute of Engineering and Technology, JK Lakshmipat University, Jaipur 302026 (India); Kumar, Praveen [Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Srivastava, Subodh; Vijay, Y.K. [Thin film and Membrane Science Laboratory, University of Rajasthan, Jaipur 302004 (India)

    2012-07-25

    Highlights: Black-Right-Pointing-Pointer ZIO films have been prepared by flash evaporation. Black-Right-Pointing-Pointer Thermal stability of ZIO films. Black-Right-Pointing-Pointer Structural, optical, electrical and other properties have been studied. - Abstract: In the present study, zinc indium oxide (ZIO) thin films were deposited on glass substrate with varying concentration (ZnO:In{sub 2}O{sub 3} - 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash evaporation technique. These deposited ZIO films were annealed in vacuum to study the thermal stability and to see the effects on the structural, chemical and electrical properties. The XRD analysis indicates that crystallization of the ZIO films strongly depends on concentration of In{sub 2}O{sub 3} and post annealing where annealed films showed polycrystalline nature. The surface morphological study of the films using scanning electron microscopy (SEM) revealed the formation of nanostructured ZIO thin films. The surface composition and oxidation state were analyzed by X-ray photoelectron spectroscopy. XPS spectra shows that as the concentration of In{sub 2}O{sub 3} increases from 10 to 50 wt%, the surface composition ratio In/Zn and O/Zn increases for as-prepared and annealed ZIO films while the XPS valance band spectra manifest the electronic transitions. The electrical resistivity was found to be decreased while carrier concentration and Hall mobility increased for both types of films with increasing concentration of In{sub 2}O{sub 3}.

  19. Synthesis of stable TiO2 nanotubes: effect of hydrothermal treatment, acid washing and annealing temperature.

    Science.gov (United States)

    López Zavala, Miguel Ángel; Lozano Morales, Samuel Alejandro; Ávila-Santos, Manuel

    2017-11-01

    Effect of hydrothermal treatment, acid washing and annealing temperature on the structure and morphology of TiO 2 nanotubes during the formation process was assessed. X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy analysis were conducted to describe the formation and characterization of the structure and morphology of nanotubes. Hydrothermal treatment of TiO 2 precursor nanoparticles and acid washing are fundamental to form and define the nanotubes structure. Hydrothermal treatment causes a change in the crystallinity of the precursor nanoparticles from anatase phase to a monoclinic phase, which characterizes the TiO 2 nanosheets structure. The acid washing promotes the formation of high purity nanotubes due to Na + is exchanged from the titanate structure to the hydrochloric acid (HCl) solution. The annealing temperature affects the dimensions, structure and the morphology of the nanotubes. Annealing temperatures in the range of 400 °C and 600 °C are optimum to maintain a highly stable tubular morphology of nanotubes. Additionally, nanotubes conserve the physicochemical properties of the precursor Degussa P25 nanoparticles. Temperatures greater than 600 °C alter the morphology of nanotubes from tubular to an irregular structure of nanoparticles, which are bigger than those of the precursor material, i.e., the crystallinity turn from anatase phase to rutile phase inducing the collapse of the nanotubes.

  20. Effect of post-annealing on the magnetic properties of sputtered Mn56Al44 thin films

    Science.gov (United States)

    Gupta, Nanhe Kumar; Husain, Sajid; Barwal, Vineet; Behera, Nilamani; Chaudhary, Sujeet

    2018-05-01

    Mn56Al44 (MnAl) thin films of constant thickness (˜30nm) were grown on naturally oxidized Si substrates using DC-magnetron sputtering. Effect of deposition parameters such as sputtering power, substrate temperature (Ts), and post-annealing temperature have been systematically invstigated. X-ray diffraction patterns revealed the presence of mixed phases, namely the τ- and β-MnAl. The highest saturation magnetization (MS) was found to be 65emu/cc using PPMS-VSM in film grown at Ts=500°C. The magnetic ordering was found to get significantly improved by performing post-annealing of these as-grwon at 400°C for 1 hr in the presence of out-of-plane magnetic field of ˜1500Oe in vacuum. In particular, at room temperature (RT), the MS got enhanced after magnetic annealing from 65emu/cc to 500 emu/cc in MnAl films grown at Ts=500°C. This sample exhibited a magneto-resistance of ˜1.5% at RT. The tuning of the structural and magnetic properties of MnAl binary alloy thin films as established here by varying the growth parameters is critical with regards to the prospective applications of MnAl, a metastable ferromagnetic system which possesses the highest perpendicular magnetic anisotropy at RT till date.

  1. Investigation of Annealing and Blend Concentration Effects of Organic Solar Cells Composed of Small Organic Dye and Fullerene Derivative

    Directory of Open Access Journals (Sweden)

    Yasser A. M. Ismail

    2011-01-01

    Full Text Available We have fabricated bulk heterojunction organic solar cells using coumarin 6 (C6 as a small organic dye, for light harvesting and electron donation, with fullerene derivative [6,6]-phenyl-C61 butyric acid methyl ester (PCBM, acting as an electron acceptor, by spin-coating technique. We have investigated thermal annealing and blend concentration effects on light harvesting, photocurrent, and performance parameters of the solar cells. In this work, we introduced an experimental method by which someone can easily detect the variation in the contact between active layer and cathode due to thermal annealing after cathode deposition. We have showed, in this work, unusual behavior of solar cell composed of small organic molecules under the influence of thermal annealing at different conditions. This behavior seemed uncommon for polymer solar cells. We try from this work to understand device physics and to locate a relationship between production parameters and performance parameters of the solar cell based on small organic molecules.

  2. Annealing effect on the electrical and optical properties of Au/n-ZnO NWs Schottky diodes white LEDs

    Science.gov (United States)

    Soomro, M. Y.; Hussain, I.; Bano, N.; Nur, O.; Willander, M.

    2013-10-01

    We report the post-growth heat treatment effect on the electrical and the optical properties of hydrothermally grown zinc oxide (ZnO) nanowires (NWs) Schottky white light emitting diodes (LEDs). It was found that there is a changed in the electroluminescence (EL) spectrum when post growth annealing process was performed at 600 °C under nitrogen, oxygen and argon ambients. The EL spectrum for LEDs based on the as grown NWs show three bands red, green and blue centered at 724, 518 and 450 nm respectively. All devices based on ZnO NWs annealed in oxygen (O2), nitrogen (N2) and argon (Ar) ambient show blue shift in the violet and the red emissions whereas a red shift is observed in the green emission compared to the as grown NWs based device. The color rendering index (CRI) and the correlated color temperature (CCT) of all LEDs were calculated to be in the range 78-91 and 2753-5122 K, respectively. These results indicate that light from the LEDs can be tuned from cold white light to warm white light by post growth annealing.

  3. High temperature annealing effects on chromel (Ni90Cr10) thin films and interdiffusion study for sensing applications

    International Nuclear Information System (INIS)

    Datta, Arindom; Cheng Xudong; Miller, Michael A.; Li Xiaochun

    2008-01-01

    Metal embedded thin film thermocouples are very attractive for various applications in harsh environments. One promising technique to embed thin films micro sensors is diffusion bonding, which requires high temperatures and pressures typically in a vacuum. In this study, high temperature annealing effects on chromel (Ni90Cr10) thin film, an important sensor material as one of the components in type K thermocouple, were investigated in a diffusion bonding environment. Annealing was carried out at 800 deg. C for one hour in a diffusion bonder under vacuum without applying pressure. Under such conditions; surface, interface and interdiffusion phenomena were investigated using different characterization techniques including X-ray Diffraction, X-ray Photoelectron Spectroscopy, Scanning Electron Microscopy, and Energy Dispersive Spectroscopy. Results indicate that the present combination of dielectrics is quite reliable and Ni90Cr10 films of 500 nm thickness can be used for applications at least up to 800 deg. C due to a protective thin chromium oxide layer formation on top of the sensor film during annealing

  4. Synergic solventing-out crystallization with subsequent time-delay thermal annealing of PbI2 precursor in mesostructured perovskite solar cells

    Science.gov (United States)

    Jia, Fujin; Guo, Yanqun; Che, Lijia; Liu, Zhiyong; Zeng, Zhigang; Cai, Chuanbing

    2018-06-01

    Although the two-step sequential deposition method provides an efficient route to fabricate high performance perovskite solar cells (PSSCs) with increasing reproducibility, the inefficient and incomplete conversion of PbI2 to perovskite is still quite a challenge. Following pioneering works, we found that the conversion process from PbI2 to perovskite mainly involves diffusion, infiltration, contact and reaction. In order to facilitate the conversion from PbI2 to perovskite, we demonstrate an effective method to regulate supersaturation level (the driving force to crystallization) of PbI2 by solventing-out crystallization combining with subsequent time-delay thermal annealing of PbI2 wet film. Enough voids and spaces in resulting porous PbI2 layer will be in favor of efficient diffusion, infiltration of CH3NH3I solution, and further enhance the contact and reaction between PbI2 and CH3NH3I in the whole film, leading to rapid, efficient and complete perovskite conversion with a conversion level of about 99.9%. Enhancement of light harvesting ranging from visible to near-IR region was achieved for the resultant high-quality perovskite. Upon this combined method, the fabricated mesostructured solar cells show tremendous power conversion efficiency (PCE) improvement from 3.2% to about 12.3% with less hysteresis owing to the simultaneous enhancement of short-circuit photocurrent density (J sc), open-circuit voltage (V oc) and fill factor (FF).

  5. Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

    International Nuclear Information System (INIS)

    Phuan, Yi Wen; Chong, Meng Nan; Zhu, Tao; Yong, Siek-Ting; Chan, Eng Seng

    2015-01-01

    Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm 2 at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe 2 O 3 ) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600 °C. As the

  6. Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

    Energy Technology Data Exchange (ETDEWEB)

    Phuan, Yi Wen [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Chong, Meng Nan, E-mail: Chong.Meng.Nan@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Zhu, Tao; Yong, Siek-Ting [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Chan, Eng Seng [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia)

    2015-09-15

    Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe{sub 2}O{sub 3}) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600

  7. Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices

    International Nuclear Information System (INIS)

    Lee, Seung Moo; Won, Jaihyung; Yim, Soyoung; Park, Se Jun; Choi, Jongsik; Kim, Jeongtae; Lee, Hyeondeok; Byun, Dongjin

    2012-01-01

    The effect of deposition and thermal annealing temperatures on the dry etch rate of a-C:H films was investigated to increase our fundamental understanding of the relationship between thermal annealing and dry etch rate and to obtain a low dry etch rate hard mask. The hydrocarbon contents and hydrogen concentration were decreased with increasing deposition and annealing temperatures. The I(D)/I(G) intensity ratio and extinction coefficient of the a-C:H films were increased with increasing deposition and annealing temperatures because of the increase of sp 2 bonds in the a-C:H films. There was no relationship between the density of the unpaired electrons and the deposition temperature, or between the density of the unpaired electrons and the annealing temperature. However, the thermally annealed a-C:H films had fewer unpaired electrons compared with the as-deposited ones. Transmission electron microscopy analysis showed the absence of any crystallographic change after thermal annealing. The density of the as-deposited films was increased with increasing deposition temperature. The density of the 600 °C annealed a-C:H films deposited under 450 °C was decreased but at 550 °C was increased, and the density of all 800 °C annealed films was increased. The dry etch rate of the as-deposited a-C:H films was negatively correlated with the deposition temperature. The dry etch rate of the 600 °C annealed a-C:H films deposited at 350 °C and 450 °C was faster than that of the as-deposited film and that of the 800 °C annealed a-C:H films deposited at 350 °C and 450 °C was 17% faster than that of the as-deposited film. However, the dry etch rate of the 550 °C deposited a-C:H film was decreased after annealing at 600 °C and 800 °C. The dry etch rate of the as-deposited films was decreased with increasing density but that of the annealed a-C:H films was not. These results indicated that the dry etch rate of a-C:H films for dry etch hard masks can be further decreased by

  8. DOE's annealing prototype demonstration projects

    International Nuclear Information System (INIS)

    Warren, J.; Nakos, J.; Rochau, G.

    1997-01-01

    One of the challenges U.S. utilities face in addressing technical issues associated with the aging of nuclear power plants is the long-term effect of plant operation on reactor pressure vessels (RPVs). As a nuclear plant operates, its RPV is exposed to neutrons. For certain plants, this neutron exposure can cause embrittlement of some of the RPV welds which can shorten the useful life of the RPV. This RPV embrittlement issue has the potential to affect the continued operation of a number of operating U.S. pressurized water reactor (PWR) plants. However, RPV material properties affected by long-term irradiation are recoverable through a thermal annealing treatment of the RPV. Although a dozen Russian-designed RPVs and several U.S. military vessels have been successfully annealed, U.S. utilities have stated that a successful annealing demonstration of a U.S. RPV is a prerequisite for annealing a licensed U.S. nuclear power plant. In May 1995, the Department of Energy's Sandia National Laboratories awarded two cost-shared contracts to evaluate the feasibility of annealing U.S. licensed plants by conducting an anneal of an installed RPV using two different heating technologies. The contracts were awarded to the American Society of Mechanical Engineers (ASME) Center for Research and Technology Development (CRTD) and MPR Associates (MPR). The ASME team completed its annealing prototype demonstration in July 1996, using an indirect gas furnace at the uncompleted Public Service of Indiana's Marble Hill nuclear power plant. The MPR team's annealing prototype demonstration was scheduled to be completed in early 1997, using a direct heat electrical furnace at the uncompleted Consumers Power Company's nuclear power plant at Midland, Michigan. This paper describes the Department's annealing prototype demonstration goals and objectives; the tasks, deliverables, and results to date for each annealing prototype demonstration; and the remaining annealing technology challenges

  9. The effect of annealing on the structural and magnetic properties of Ni-ferrite nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Ojha, Chaturbhuj, E-mail: cbophy@yahoo.co.in; Chauhan, S. S.; Shrivastava, A. K. [School of Studies in Physics, Jiwaji University, Gwalior (India); Verma, A. K. [Govt. Post Graduate College Dholpur, Rajasthan (India)

    2015-06-24

    Magnetic nanoparticles NiFe{sub 2}O{sub 4} were prepared by chemical co-precipitation technique using the chlorides of Ni, Fe (III) and oleic acid. The precursors were annealed at different temperature 500, 700, and 900 °C. The XRD of samples show the presence of inverse cubic spinel structure. Grain size was determined using Scherrer formula and SEM technique. The Particle size, Lattice parameter and X-ray density were also estimated from X-ray diffraction data. The particles size was found to vary from 17nm to 37 nm and largely depends on the annealing temperature. Magnetization measurements have also carried out using VSM and it was found that saturation magnetization (Ms), Remanance (Mr) and coercivity (H{sub c}) of nano ferrite materials are lower compared to bulk materials.

  10. Annealing effect of ITO and ITO/Cu transparent conductive films in low pressure hydrogen atmosphere

    International Nuclear Information System (INIS)

    Lin, T.-C.; Chang, S.-C.; Chiu, C.-F.

    2006-01-01

    A layer of copper was sputtered onto an indium tin oxide (ITO) glass substrates to form an ITO/Cu film, using a direct current magnetron operated at room temperature and in argon gas. The ITO and ITO/Cu films were heated in vacuum, and in hydrogen gas, to study their dependence of electronic and optical properties on annealing temperature. The resistivity of the ITO film was reduced from 6.2 x 10 -4 to 2.7 x 10 -4 Ω cm, and the average optical transmittance was improved to above 90% by the annealing process. The ITO/Cu film showed a low value of resistivity of 2.8 x 10 -4 Ω cm and the transmittance was between 58 and 72%

  11. Annealing Effects on the Normal-State Resistive Properties of Underdoped Cuprates

    Science.gov (United States)

    Vovk, R. V.; Khadzhai, G. Ya.; Nazyrov, Z. F.; Kamchatnaya, S. N.; Feher, A.; Dobrovolskiy, O. V.

    2018-05-01

    The influence of room-temperature annealing on the parameters of the basal-plane electrical resistance of underdoped YBa_2Cu_3O_{7-δ } and HoBa_2Cu_3O_{7-δ } single crystals in the normal and superconducting states is investigated. The form of the derivatives dρ (T)/dT makes it possible to determine the onset temperature of the fluctuation conductivity and indicates a nonuniform distribution of the labile oxygen. Annealing has been revealed to lead to a monotonic decrease in the oxygen deficiency, that primarily manifests itself as a decrease in the residual resistance, an increase of T_c, and a decrease in the Debye temperature.

  12. Annealing effects on photoluminescence of SiNx films grown by PECVD

    International Nuclear Information System (INIS)

    Komarov, F.F.; Parkhomenko, I.N.; Vlasukova, L.A.; Milchanin, O.V.; Togambayeva, A.K.; Kovalchuk, N.S.

    2013-01-01

    Si-rich and N-rich silicon nitride films were deposited at low temperature 300 °C by using plasma-enhanced chemical vapor deposition (PECVD). The optical and structural properties of these films have been investigated by ellipsometry, Rutherford backscattering (RBS), transmission electron microscopy (TEM), Raman spectroscopy (RS) and photoluminescence (PL). The formation of silicon clusters in both Si-rich and N-rich silicon nitride films after annealing at 900 °C and 1000 °C for hour in N 2 ambient has been revealed by TEM. Dependency of PL spectra on stoichiometry and post-annealing temperature was analyzed. The contribution of Si and N-related defects in emitting properties of Si-rich and N-rich SiN x has been discussed. (authors)

  13. Effect of water vapor on annealing scale formation on 316 SS

    International Nuclear Information System (INIS)

    Cheng, S.-Y.; Kuan, S.-L.; Tsai, W.-T.

    2006-01-01

    The oxidation behavior of 316 stainless steel (SS) annealed in air containing 0.1 atm water vapor at temperatures ranging from 800 to 1030 deg. C was investigated. A kinetic study of the oxidation was made by employing thermal-gravimetric analysis (TGA). The morphology, composition and structure of the scale were examined by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The experimental results showed that significant breakaway oxidation occurred, resulting in substantial weight increase, as the steel was annealed in moist air at temperatures above 950 deg. C. The scaling behavior of 316 SS in wet air at 1030 deg. C could be divided into two stages based on the alteration of the oxidation rate. In each stage, the scale on 316 SS exhibited a different structure and morphology. The complex process of the formation of scale in wet air was discussed and proposed

  14. Annealing effects on recombinative activity of nickel at direct silicon bonded interface

    Energy Technology Data Exchange (ETDEWEB)

    Kojima, Takuto, E-mail: tkojima@toyota-ti.ac.jp; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya, 468-8511 (Japan)

    2015-09-15

    By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi{sub 2}.

  15. Annealing temperature effect on electrical properties of MEH-PPV thin film via spin coating method

    Science.gov (United States)

    Azhar, N. E. A.; Shariffudin, S. S.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2018-05-01

    Organic semiconductor has been discovered in different application devices such as organic light emitting diodes (OLEDs). Poly [2-methoxy-5(2' -ethylhexyloxy)-1, 4-phenylenevinylene), MEH-PPV widely used in this device because its ability to produce a good optical quality films. The MEH-PPV was prepared on glass substrate by spin coating method. The thin film was investigated at different annealing temperatures. The scanning electron micrographs (SEM) revealed that sample annealed at 50°C showed uniformity and less aggregation on morphology polymer thin film. Optical properties showed the intensities of visible emission increased as temperatures increased. The current-voltage (I-V) measurement revealed that the temperature of 50°C showed high conductive and it is suitable for optoelectronic device.

  16. Annealing effect on the performance of sputtering deposited Metglas thin films

    KAUST Repository

    Cai, Liang

    2010-12-01

    Magnetostrictive sensors based on ferromagnetic materials have been widely used in detecting chemicals and biological species. The Metglas™ 2826MB is one of the bulk strip materials that is employed as the sensor platform. However, the sensitivity is limited by the large size of the sensors itself. In order to improve the sensitivity, we have developed a process to fabricate microscale sensors of 500 × 100 μm in size using conventional MEMS technology. As-deposited, the sensors suffered from internal stress, which was released by a annealing the sensors at 215 °C for two hours under vacuum condition. The annealing process improved the magnetic properties of the thin films and increased the resonant frequency of the sensor by 214 kHz.

  17. Annealing effects on recombinative activity of nickel at direct silicon bonded interface

    International Nuclear Information System (INIS)

    Kojima, Takuto; Ohshita, Yoshio; Yamaguchi, Masafumi

    2015-01-01

    By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi 2

  18. Annealing effect on the performance of sputtering deposited Metglas thin films

    KAUST Repository

    Cai, Liang; Hu, Jing; Prorok, Barton C.; Gooneratne, Chinthaka Pasan; Kosel, Jü rgen

    2010-01-01

    Magnetostrictive sensors based on ferromagnetic materials have been widely used in detecting chemicals and biological species. The Metglas™ 2826MB is one of the bulk strip materials that is employed as the sensor platform. However, the sensitivity is limited by the large size of the sensors itself. In order to improve the sensitivity, we have developed a process to fabricate microscale sensors of 500 × 100 μm in size using conventional MEMS technology. As-deposited, the sensors suffered from internal stress, which was released by a annealing the sensors at 215 °C for two hours under vacuum condition. The annealing process improved the magnetic properties of the thin films and increased the resonant frequency of the sensor by 214 kHz.

  19. Effect of Mn Content and Solution Annealing Temperature on the Corrosion Resistance of Stainless Steel Alloys

    Directory of Open Access Journals (Sweden)

    Ihsan-ul-Haq Toor

    2014-01-01

    Full Text Available The corrosion behavior of two specially designed austenitic stainless steels (SSs having different Nickel (Ni and Manganese (Mn contents was investigated. Prior to electrochemical tests, SS alloys were solution-annealed at two different temperatures, that is, at 1030°C for 2 h and 1050°C for 0.5 h. Potentiodynamic polarization (PD tests were carried out in chloride and acidic chloride, whereas linear polarization resistance (LPR and electrochemical impedance spectroscopy (EIS was performed in 0.5 M NaCl solution at room temperature. SEM/EDS investigations were carried out to study the microstructure and types of inclusions present in these alloys. Experimental results suggested that the alloy with highest Ni content and annealed at 1050°C/0.5 hr has the highest corrosion resistance.

  20. Effect of two-step intercritical annealing on microstructure and mechanical properties of hot-rolled medium manganese TRIP steel containing δ-ferrite

    International Nuclear Information System (INIS)

    Xu, Yun-bo; Hu, Zhi-ping; Zou, Ying; Tan, Xiao-dong; Han, Ding-ting; Chen, Shu-qing; Ma, De-gang; Misra, R.D.K.

    2017-01-01

    The microstructure-properties relationship, work-hardening behavior and retained austenite stability have been systematically investigated in a hot-rolled medium manganese transformation-induced-plasticity (TRIP) steel containing δ-ferrite subjected to one-step and two-step intercritical annealing. The steel exhibited tensile strength of 752 MPa and total elongation of 52.7% for one-step intercritical annealing at 740 °C, tensile strength of 954 MPa and total elongation of 39.2% in the case of intercritical quenching at 800 °C and annealing at 740 °C. The austenite obtained by two-step annealing mostly consists of refined lath structures and increased fraction of block-type particles existing at various kinds of sites, which is highly distinguished from those characterized by long lath morphology and small amounts of granular shape in one-step annealed samples. In spite of a higher C and Mn content in austenite and finer austenite laths, two-step annealing can lead to an active and continuous TRIP effect provided by a mixed blocky and lath-type austenitic structure with lower stability, contributing to a higher UTS. In contrast, one-step annealing gave rise to a less active but sustained TRIP effect given by the dominant lath-like austenite having higher stability, leading to a very high elongation. The further precipitation of vanadium carbides and the presence of both dislocation substructure and fine equiaxed grain in ferrite matrix facilitate the increase of yield strength after double annealing. - Highlights: • A novel two-step process was applied to a hot-rolled Fe-0.2C-6.5Mn-3Al steel. • The interplay between different microstructures and mechanical properties was studied. • Two-step annealing led to an active and continuous TRIP. • An outstanding combination of strength of 954 MPa and elongation of 39.2% was obtained.

  1. Effect of two-step intercritical annealing on microstructure and mechanical properties of hot-rolled medium manganese TRIP steel containing δ-ferrite

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Yun-bo [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, People' s Republic China (China); Hu, Zhi-ping, E-mail: huzhiping900401@126.com [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, People' s Republic China (China); Zou, Ying; Tan, Xiao-dong; Han, Ding-ting; Chen, Shu-qing [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819, People' s Republic China (China); Ma, De-gang [Tangshan Iron and Steel Company, Tangshan 063000, People' s Republic China (China); Misra, R.D.K. [Laboratory for Excellence in Advanced Steel Research, Department of Metallurgical, Materials and Biomedical Engineering, University of Texas at El Paso, TX 79968 (United States)

    2017-03-14

    The microstructure-properties relationship, work-hardening behavior and retained austenite stability have been systematically investigated in a hot-rolled medium manganese transformation-induced-plasticity (TRIP) steel containing δ-ferrite subjected to one-step and two-step intercritical annealing. The steel exhibited tensile strength of 752 MPa and total elongation of 52.7% for one-step intercritical annealing at 740 °C, tensile strength of 954 MPa and total elongation of 39.2% in the case of intercritical quenching at 800 °C and annealing at 740 °C. The austenite obtained by two-step annealing mostly consists of refined lath structures and increased fraction of block-type particles existing at various kinds of sites, which is highly distinguished from those characterized by long lath morphology and small amounts of granular shape in one-step annealed samples. In spite of a higher C and Mn content in austenite and finer austenite laths, two-step annealing can lead to an active and continuous TRIP effect provided by a mixed blocky and lath-type austenitic structure with lower stability, contributing to a higher UTS. In contrast, one-step annealing gave rise to a less active but sustained TRIP effect given by the dominant lath-like austenite having higher stability, leading to a very high elongation. The further precipitation of vanadium carbides and the presence of both dislocation substructure and fine equiaxed grain in ferrite matrix facilitate the increase of yield strength after double annealing. - Highlights: • A novel two-step process was applied to a hot-rolled Fe-0.2C-6.5Mn-3Al steel. • The interplay between different microstructures and mechanical properties was studied. • Two-step annealing led to an active and continuous TRIP. • An outstanding combination of strength of 954 MPa and elongation of 39.2% was obtained.

  2. The effects of radiation damage accumulation and annealing on fission-track dating of titanite

    International Nuclear Information System (INIS)

    Enkelmann, Eva; Jonckheere, Raymond; Ratschbacher, Lothar

    2005-01-01

    Fission-track dating of titanite is hindered by the fact that track etching is anisotropic in fresh titanites and becomes isotropic with increasing radiation damage. Independent age determinations with the population method are problematic due to different track counting efficiencies (Q) for ρ s in unannealed and ρ i in annealed titanite. Independent age determinations with the external detector method depend on correction factors for the track registration geometries (G = 0.5), counting efficiencies (Q) and range deficit (R = 1.38); however, Q is unaffected by annealing. It was attempted to determine GQR through calculation, direct experiment and on the basis of age standards. The direct experiment involves measurements of the ratio of the induced-track densities in titanite and a co-irradiated external detector. The track densities in the internal titanite surfaces could not be measured but the results for the external surfaces confirm that this approach leads to a significant overestimation of GQR, due to prior annealing. The GQR-values determined on the basis of age standards are consistent with that obtained by calculation assuming that Q ∼ 1, although there is no experimental confirmation for this fact apart from their isotropic etching characteristics. The fact that identical GQR-factors were obtained on standards of different age and uranium content suggests that a single GQR-value is appropriate for dating titanites within a broad range of radiation damage. In terms of the ζ-calibration this implies that a single ζ-factor is also suitable for dating different titanites. These findings suggest that other factors besides the accumulation of alpha-recoil damage, such as a phase transition, could be co-responsible for the different etching characteristics of annealed and unannealed titanites

  3. Synthetic and effect of annealing on the luminescent properties of ZnO nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Mo, Zhao-Jun, E-mail: mzjmzj163@163.com [Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices of Ministry of Education of Ministry of Education, Tianjin University of Technology, Tianjin 300191 (China); Hao, Zhi-Hong [Tianjin Vocational Institute, Tianjin (China); Wu, Hai-Zhen; Yang, Qing; Zhuo, Ping; Yang, Hui; Xu, Jian-Ping; Zhang, Xiao-Song [Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices of Ministry of Education of Ministry of Education, Tianjin University of Technology, Tianjin 300191 (China); Li, Lan, E-mail: lilan2000us@126.com [Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices of Ministry of Education of Ministry of Education, Tianjin University of Technology, Tianjin 300191 (China)

    2016-07-15

    ZnO nanowires were successfully fabricated by using the hydrothermal method in the existence of the poly ethylene glycol (PEG) with the molecular weight of 200. The experimental results exhibit that the ZnO nanowires with the diameter of ~30 nm and the length of ten micrometers. PL spectra show a weak ultraviolet emission and an intense broad visible emission band for as-grown and annealed samples. These visible emission bands exhibit red-shifts from green (545 nm) to yellow (580 nm) and blue-shifts from yellow (580 nm) to green (520 nm) by annealing at aerobic or anaerobic environment, it indicates that the defect types are changed by annealed at different environment. Additionally, the red-shifts (520 nm) and blue-shifts (580) can match up the bimodal lorentzian fitting (520 nm and 583 nm) of as-growth, which suggest that the visible emission band (545 nm) is closely related to oxygen defects. The oxygen atomic can enter into the crystal lattice of ZnO and decrease the oxygen vacancy in air or oxygen, whereas, more oxygen vacancy defects is gave rise in vacuum annealed. We guess the energy levels of the intrinsic defects in ZnO nanowire maybe like that: the electrons of Zn{sub i} defects compound with holes of V{sub Zn}, O{sub i} and O{sub Zn} levels and conform to the yellow emission, and the green emission corresponds to the electron transition from the association defects deep donor level to the valence band.

  4. Effect of deposition and annealing conditions on the optical properties of amorphous silicon

    International Nuclear Information System (INIS)

    Mashin, A.I.; Ershov, A.V.; Khokhlov, D.A.

    1998-01-01

    The spectral characteristics of the refractive index and the extinction coefficient in the range 0.6-2.0 eV for amorphous silicon films prepared by electron-beam evaporation with variation of the substrate temperature, deposition rate, and annealing temperature in air are presented. The results obtained are discussed on the basis of the changes in the Penn gap energy as a function of the indicated preparation and treatment conditions

  5. Effects of post annealing on the microstructure, mechanical properties and cavitation erosion behavior of arc-sprayed FeNiCrBSiNbW coatings

    International Nuclear Information System (INIS)

    Lin, Jinran; Wang, Zehua; Lin, Pinghua; Cheng, Jiangbo; Zhang, Xin; Hong, Sheng

    2015-01-01

    Highlights: • FeNiCrBSiNbW coatings were prepared by arc spraying process. • Microstructural changes of the coatings were investigated by TEM. • As-sprayed coating had higher cavitation erosion resistance than annealed coatings. • The mechanism for annealing-induced change in cavitation erosion was discussed. - Abstract: FeNiCrBSiNbW coatings were fabricated via arc spraying process and were subsequently annealed at 450, 550 and 650 °C for 1 h to study the effect of annealing treatment on the microstructure, mechanical properties and cavitation erosion behavior. Microstructure was studied using scanning and transmission electron microscopy. The results showed that oxides, fine crystalline particles and borides were formed after annealing at 650 °C. With increasing annealing temperature, the coatings showed reductions in porosity and fracture toughness, and an increase in microhardness. The cavitation erosion behavior of the coatings was investigated in distilled water. The results showed that the cavitation erosion resistance of the coatings decreased with increasing annealing temperature, and the as-sprayed coating exhibited the best cavitation erosion resistance among the four kinds of coatings. This was attributed to the good fracture toughness, high amorphous phase content and the absence of oxides in the as-sprayed coating

  6. Effect of thermal annealing treatment with titanium chelate on buffer layer in inverted polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Zhiyong [College of Science, Shenyang Agricultural University, Shenyang 110866 (China); Wang, Ning, E-mail: ning_wang@outlook.com [School of Electrical and Electronic and Engineering, Nanyang Technological University 639798 (Singapore); Fu, Yan, E-mail: 1060945062@qq.com [College of Science, Shenyang Agricultural University, Shenyang 110866 (China)

    2016-12-15

    Highlights: • The TIPD layer as electron extraction layer and instead of Ca or LiF. • Impact of the work function of TIPD layer by thermal annealing treatment. • Importance of TIPD layer as electron extraction layer for work function and potential barrier. - Abstract: The solution processable electron extraction layer (EEL) is crucial for polymer solar cells (PSCs). Here, we investigated titanium (diisopropoxide) bis(2,4-pentanedionate) (TIPD) as an EEL and fabricated inverted PSCs with a blend of poly(3-hexylthiophene) (P3HT) and indene-C60 bisadduct (ICBA) acting as the photoactive layer, with a structure of ITO/TIPD/P3HT:ICBA/MoO{sub 3}/Ag. After thermal annealing treatment at 150 °C for 15 min, the PSC performances increased from 3.85% to 6.84% and they achieve stable power conversion efficiency (PCE), with a similar PCE compared with TiO{sub 2} as an EEL by the vacuum evaporated method. Fourier transform infrared spectroscopy (FTIR) and ultraviolet photoelectron spectroscopy (UPS) confirmed that the TIPD decomposed and formed the Ti=O bond, and the energy level of the lowest unoccupied molecular orbital and the highest occupied molecular orbital increased. The space charge limited current (SCLC) measurements further confirmed the improvement in electron collection and the transport ability using TIPD as the EEL and thermal annealing.

  7. ZnO nanostructures with tunable visible luminescence: Effects of kinetics of chemical reduction and annealing

    Directory of Open Access Journals (Sweden)

    R. Raji

    2017-03-01

    Full Text Available Highly crystalline ZnO nanoparticles were synthesized using a co-precipitation method. The morphology and optical properties of these nanoparticles are found to be highly sensitive to the growth parameters such as the concentration of reducing agent and annealing temperature. Indeed, the concentration of the reducing agent can alter the morphology of nanoparticles from quasi-spherical to rod-like and then to flower-like structures. Attempts were made to tune the emission wavelength over the visible region by varying the kinetics of chemical reduction and annealing. The possibility of tuning the emission in a visible range from orange to red and then to green by changing the nature of defects by annealing is also reported. Analysis of the Raman spectrum, with its intensity observed at 580 cm−1 corresponding to E1 (LO mode, revealed that the kinetics and thermodynamics of formation and growth of these nanoparticles determined the nature and density of the probable defects such as oxygen vacancies, interstitial zinc atoms and their complexes.

  8. Effect of annealing on magnetic properties and structure of Fe-Ni based magnetic microwires

    Science.gov (United States)

    Zhukova, V.; Korchuganova, O. A.; Aleev, A. A.; Tcherdyntsev, V. V.; Churyukanova, M.; Medvedeva, E. V.; Seils, S.; Wagner, J.; Ipatov, M.; Blanco, J. M.; Kaloshkin, S. D.; Aronin, A.; Abrosimova, G.; Orlova, N.; Zhukov, A.

    2017-07-01

    We studied the magnetic properties and domain wall (DW) dynamics of Fe47.4Ni26.6Si11B13C2 and Fe77.5Si7.5B15 microwires. Both samples present rectangular hysteresis loop and fast magnetization switching. Considerable enhancement of DW velocity is observed in Fe77.5Si7.5B15, while DW velocity of samples Fe47.4Ni26.6Si11B13C2 is less affected by annealing. The other difference is the magnetic field range of the linear region on dependence of domain wall velocity upon magnetic field: in Fe47.4Ni26.6Si11B13C2 sample is considerably shorter and drastically decreases after annealing. We discussed the influence of annealing on DW dynamics considering different magnetoelastic anisotropy of studied microwires and defects within the amorphous state in Fe47.4Ni26.6Si11B13C2. Consequently we studied the structure of Fe47.4Ni26.6Si11B13C2 sample using X-ray diffraction and the atom probe tomography. The results obtained using the atom probe tomography supports the formation of the B-depleted and Si-enriched precipitates in the metallic nucleus of Fe-Ni based microwires.

  9. Annealing effect on physical properties of evaporated molybdenum oxide thin films for ethanol sensing

    Energy Technology Data Exchange (ETDEWEB)

    Touihri, S., E-mail: s_touihri@yahoo.fr [Unité de Physique des Dispositifs a semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Arfaoui, A.; Tarchouna, Y. [Unité de Physique des Dispositifs a semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Labidi, A. [Laboratoire Matériaux, Molécules et Applications, IPEST, BP 51 La Marsa 2070, Tunis (Tunisia); Amlouk, M. [Unité de Physique des Dispositifs a semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis (Tunisia); Bernede, J.C. [LUNAM, Universite de Nantes, Moltech Anjou, CNRS, UMR 6200, FSTN, 2 Rue de la houssiniere, BP 92208, Nantes F-44322 (France)

    2017-02-01

    Highlights: • Thermally grown molybdenum oxide films are amorphous, oxygen deficient and gas sensing. • Air or vacuum annealing transforms them into a sub-stoichiometric MoO{sub 3−x} phase. • The samples annealed at 500 °C in oxygen were crystallized and identified as pure orthorhombic MoO{sub 3} phase. • The conduction process and sensing mechanism of MoO{sub 3-x} to ethanol have been studied. - Abstract: This paper deals with some physical investigations on molybdenum oxide thin films growing on glass substrates by the thermal evaporation method. These films have been subjected to an annealing process under vacuum, air and oxygen at various temperatures 673, 723 and 773 K. First, the physical properties of these layers were analyzed by means of X-ray diffraction, Raman spectroscopy, scanning electron microscopy (SEM) and optical measurements. These techniques have been used to investigate the oxygen index in MoO{sub x} properties during the heat treatment. Second, from the reflectance and transmittance optical measurements, it was found that the direct band gap energy value increased from 3.16 to 3.90 eV. Finally, the heat treatments reveal that the oxygen index varies in such molybdenum oxides showing noticeably sensitivity toward ethanol gas.

  10. Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition

    International Nuclear Information System (INIS)

    Wang Qingtao; Wang Guanzhong; Jie Jiansheng; Han Xinhai; Xu Bo; Hou, J.G.

    2005-01-01

    (001)-oriented ZnO films on Zn substrates were synthesized by cathodic electrodeposition from an aqueous solution composed only of 0.05 M zinc nitrate at 65 deg. C. A bound exciton emission band around 3.34 eV along with three longitudinal optical (LO) phonon replicas and an intensive broad emission band around 2.17 eV were observed from the photoluminescence (PL) spectra of ZnO films prepared at more positive potential (- 0.6∼- 0.8 V). When more negative potential (- 1.0∼- 1.4 V) was applied, the ultraviolet emission band disappeared. These results indicate that more positive electrodeposition potential favors the high quality ZnO film growth. The PL spectra of the annealed ZnO films prepared at more positive electrodeposition potentials - 0.6∼- 1.0 V exhibit the ultraviolet emission at 3.35 eV and a negligibly weak emission from defects. Annealing resulted in the enhancement and sharpening of the excitonic emission band and decrease of the deep level emission. The bandgap (E g ) of the ZnO film prepared at - 1.0 V on indium tin oxide (ITO) substrate decreased from 3.56 to 3.29 eV due to the removing of Zn(OH) 2 from the film after annealing

  11. Improving ion irradiated high Tc Josephson junctions by annealing: The role of vacancy-interstitial annihilation

    International Nuclear Information System (INIS)

    Sirena, M.; Matzen, S.; Bergeal, N.; Lesueur, J.; Faini, G.; Bernard, R.; Briatico, J.; Crete, D. G.

    2007-01-01

    The authors have studied the annealing effect in the transport properties of high T c Josephson junctions (JJs) made by ion irradiation. Low temperature annealing (80 deg. C) increases the JJ coupling temperature (T J ) and the I c R n product, where I c is the critical current and R n the normal resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one

  12. Effect of Post-annealing on the Electrochromic Properties of Layer-by-Layer Arrangement FTO-WO3-Ag-WO3-Ag

    Science.gov (United States)

    Hoseinzadeh, S.; Ghasemiasl, R.; Bahari, A.; Ramezani, A. H.

    2018-03-01

    In the current study, composites of tungsten trioxide (W03) and silver (Ag) are deposited in a layer-by-layer electrochromic (EC) arrangement onto a fluorine-doped tin oxide coated glass substrate. Tungsten oxide nanoparticles are an n-type semiconductor that can be used as EC cathode material. Nano-sized silver is a metal that can serve as an electron trap center that facilitates charge departure. In this method, the WO3 and Ag nanoparticle powder were deposited by physical vapor deposition onto the glass substrate. The fabricated electrochromic devices (ECD) were post-annealed to examine the effect of temperature on their EC properties. The morphology of the thin film was characterized by scanning electron microscopy and atomic force microscopy. Structural analysis showed that the addition of silver dopant increased the size of the aggregation of the film. The film had an average approximate roughness of about 17.8 nm. The electro-optical properties of the thin film were investigated using cyclic voltammetry and UV-visible spectroscopy to compare the effects of different post-annealing temperatures. The ECD showed that annealing at 200°C provided better conductivity (maximum current of about 90 mA in the oxidation state) and change of transmittance (ΔT = 90% at the continuous switching step) than did the other thin films. The optical band gaps of the thin film showed that it allowed direct transition at 3.85 eV. The EC properties of these combinations of coloration efficiency and response time indicate that the WO3-Ag-WO3-Ag arrangement is a promising candidate for use in such ECDs.

  13. Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

    Science.gov (United States)

    van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

    2016-09-01

    We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

  14. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Oh, Byung Su [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Display Company, Yongin (Korea, Republic of); Joo, Min-Kyu [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble (France); Ahn, Seung-Eon [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin 446-712 (Korea, Republic of)

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  15. Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by radio frequency-magnetron sputtering on GaAs (001) substrates

    International Nuclear Information System (INIS)

    Liu, H. F.; Chua, S. J.; Hu, G. X.; Gong, H.; Xiang, N.

    2007-01-01

    The effects of thermal annealing on Hall-effect measurement and photoluminescence (PL) from undoped n-type ZnO/GaAs thin-film samples have been studied. The evolutions of carrier concentration, electrical resistivity, and PL spectrum at various annealing conditions reveal that the dominant mechanism that affects the electrical and PL properties is dependent on the amount of thermal energy and the ambient pressure applied during the annealing process. At low annealing temperatures, annihilation of native defects is dominant in reducing the carrier concentration and weakening the low-energy tail of the main PL peak, while the GaAs substrate plays only a minor role in carrier compensations. For the higher temperatures, diffusion of Ga atoms from the GaAs substrate into ZnO film leads to a more n-type conduction of the sample. As a result, the PL exhibits a high-energy tail due to the high-level doping

  16. Effect of nitrogen addition and annealing temperature on superelastic properties of Ti-Nb-Zr-Ta alloys

    Energy Technology Data Exchange (ETDEWEB)

    Tahara, Masaki [Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Kim, Hee Young, E-mail: heeykim@ims.tsukuba.ac.jp [Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Hosoda, Hideki [Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Nam, Tae-hyun [School of Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processingnd ERI, Gyeongsang National University, 900 Gazwadong, Jinju, Gyeongnam 660-701 (Korea, Republic of); Miyazaki, Shuichi, E-mail: miyazaki@ims.tsukuba.ac.jp [Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); School of Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processingnd ERI, Gyeongsang National University, 900 Gazwadong, Jinju, Gyeongnam 660-701 (Korea, Republic of)

    2010-10-15

    Research highlights: In this study, the effects of composition and annealing temperature on microstructure, shape memory effect and superelastic properties were investigated in Ti-Nb-4Zr-2Ta-N alloys by measuring stress-strain curves at various temperatures and using transmission electron microscopy. Dissolution of {alpha} phase increases M{sub s} and decreases the critical stress for slip for the Ti-22Nb-4Zr-2Ta alloy while it causes the decrease of M{sub s} and the increase of the critical stress for slip for the Ti-20Nb-4Zr-2Ta-0.6N alloy. The different effect of dissolution of {alpha} phase can be attributed to the fact that N is absorbed in {alpha} phase. - Abstract: The composition dependence of the mechanical properties and martensitic transformation behavior of Ti-Nb-4Zr-2Ta-N alloys is investigated. The effect of annealing temperature on the microstructural evolution and superelastic properties in the N-added and N-free alloys is compared. The addition of N decreases M{sub s} of Ti-Nb-4Zr-2Ta alloys by about 200 K per 1 at.%N and improves the superelastic properties of Ti-Nb-4Zr-2Ta alloys. The dissolution of {alpha} phase increases the martensitic transformation start temperature and decreases the superelastic recovery strain for the N-free alloy, whereas it causes opposite effects for the N-added alloy. The different annealing temperature dependences of superelastic properties are discussed on the basis of microstructure observation.

  17. Effect of nitrogen addition and annealing temperature on superelastic properties of Ti-Nb-Zr-Ta alloys

    International Nuclear Information System (INIS)

    Tahara, Masaki; Kim, Hee Young; Hosoda, Hideki; Nam, Tae-hyun; Miyazaki, Shuichi

    2010-01-01

    Research highlights: In this study, the effects of composition and annealing temperature on microstructure, shape memory effect and superelastic properties were investigated in Ti-Nb-4Zr-2Ta-N alloys by measuring stress-strain curves at various temperatures and using transmission electron microscopy. Dissolution of α phase increases M s and decreases the critical stress for slip for the Ti-22Nb-4Zr-2Ta alloy while it causes the decrease of M s and the increase of the critical stress for slip for the Ti-20Nb-4Zr-2Ta-0.6N alloy. The different effect of dissolution of α phase can be attributed to the fact that N is absorbed in α phase. - Abstract: The composition dependence of the mechanical properties and martensitic transformation behavior of Ti-Nb-4Zr-2Ta-N alloys is investigated. The effect of annealing temperature on the microstructural evolution and superelastic properties in the N-added and N-free alloys is compared. The addition of N decreases M s of Ti-Nb-4Zr-2Ta alloys by about 200 K per 1 at.%N and improves the superelastic properties of Ti-Nb-4Zr-2Ta alloys. The dissolution of α phase increases the martensitic transformation start temperature and decreases the superelastic recovery strain for the N-free alloy, whereas it causes opposite effects for the N-added alloy. The different annealing temperature dependences of superelastic properties are discussed on the basis of microstructure observation.

  18. Estimation of effective temperatures in quantum annealers for sampling applications: A case study with possible applications in deep learning

    Science.gov (United States)

    Benedetti, Marcello; Realpe-Gómez, John; Biswas, Rupak; Perdomo-Ortiz, Alejandro

    2016-08-01

    An increase in the efficiency of sampling from Boltzmann distributions would have a significant impact on deep learning and other machine-learning applications. Recently, quantum annealers have been proposed as a potential candidate to speed up this task, but several limitations still bar these state-of-the-art technologies from being used effectively. One of the main limitations is that, while the device may indeed sample from a Boltzmann-like distribution, quantum dynamical arguments suggest it will do so with an instance-dependent effective temperature, different from its physical temperature. Unless this unknown temperature can be unveiled, it might not be possible to effectively use a quantum annealer for Boltzmann sampling. In this work, we propose a strategy to overcome this challenge with a simple effective-temperature estimation algorithm. We provide a systematic study assessing the impact of the effective temperatures in the learning of a special class of a restricted Boltzmann machine embedded on quantum hardware, which can serve as a building block for deep-learning architectures. We also provide a comparison to k -step contrastive divergence (CD-k ) with k up to 100. Although assuming a suitable fixed effective temperature also allows us to outperform one-step contrastive divergence (CD-1), only when using an instance-dependent effective temperature do we find a performance close to that of CD-100 for the case studied here.

  19. Processes in N-channel MOSFETs during postirradiation thermal annealing

    International Nuclear Information System (INIS)

    Pejovic, M.; Jaksic, A.; Ristic, G.; Baljosevic, B.

    1997-01-01

    The processes during postirradiation thermal annealing of γ-ray irradiated n-channel MOSFETs with both wet and dry gate oxides are investigated. For both analysed technologies, a so-called ''latent'' interface trap buildup is observed, followed at very late annealing times by the decrease in the interface-trap density. A model is proposed that successfully accounts for the experimental results. Implications of observed effects for total dose hardness assurance test methods implementation are discussed. (author)

  20. Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature.

    Science.gov (United States)

    Hang, Da-Ren; Islam, Sk Emdadul; Sharma, Krishna Hari; Kuo, Shiao-Wei; Zhang, Cheng-Zu; Wang, Jun-Jie

    2014-01-01

    Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications.

  1. Influence of annealing conditions on anodic tungsten oxide layers and their photoelectrochemical activity

    International Nuclear Information System (INIS)

    Syrek, Karolina; Zych, Marta; Zaraska, Leszek; Sulka, Grzegorz D.

    2017-01-01

    Highlights: • Effect of annealing temperature on the morphology and crystalline structure of anodic WO 3 was investigated. • Photoelectrochemical properties of WO 3 layers annealed at different temperatures were studied. • Edges of conduction and valence bands were estimated for tungsten oxide layers annealed at different temperatures. • Influence of annealing time on crystalline structure, morphology and photoelectrochemical performance was studied. - Abstract: The nanoporous tungsten oxide films having an amorphous structure were prepared in an electrolyte containing fluoride ions via an anodization process. The as-synthesized anodic oxide layers can be easily converted to the monoclinic WO 3 phase upon annealing in air. The as-synthesized and annealed WO 3 layers were investigated by using X-ray diffraction, scanning electron microscopy, and photocurrent spectroscopy. The effect of annealing temperature and annealing time on the oxide morphology, crystal structure and electrochemical properties were studied. The samples were annealed in air at the temperatures ranging from 400 to 600 °C, and it was found that the original porous morphology of oxide is completely lost after annealing at 600 °C. The changes in the average crystallite sizes upon annealing were confirmed by XRD measurements. The photoelectrochemical performance of the annealed WO 3 layers were studied under pulsed UV illumination, and the highest photocurrents were observed at the incident light wavelength of 350 nm for the sample annealed at 500 °C for 2 h. The band gap energy and the positions of conduction and valence band edges were determined for all studied samples.

  2. Effects of interface roughness on the annealing behaviour of laminated Ti-Al composite deformed by hot rolling

    DEFF Research Database (Denmark)

    Du, Y.; Fan, G.H.; Yu, Tianbo

    2015-01-01

    A laminated Ti-Al composite has been fabricated by hot compaction and hot rolling of alternate layers of commercial purity Ti and Al sheets with a thickness of 200 μm. The hot compaction temperature was 500˚C and in a following step the composite has been reduced 50% in thickness by hot rolling....... The fully consolidated composite has been annealed at 300˚C and 500˚C for different length of time. As a result of the differences in crystal structure and mechanical properties between Ti and Al protrusions and retrusions formed at the interface. A heterogeneous interface has thereby been created...

  3. A New Heuristic Providing an Effective Initial Solution for a Simulated Annealing approach to Energy Resource Scheduling in Smart Grids

    DEFF Research Database (Denmark)

    Sousa, Tiago M; Morais, Hugo; Castro, R.

    2014-01-01

    scheduling problem. Therefore, the use of metaheuristics is required to obtain good solutions in a reasonable amount of time. This paper proposes two new heuristics, called naive electric vehicles charge and discharge allocation and generation tournament based on cost, developed to obtain an initial solution...... to be used in the energy resource scheduling methodology based on simulated annealing previously developed by the authors. The case study considers two scenarios with 1000 and 2000 electric vehicles connected in a distribution network. The proposed heuristics are compared with a deterministic approach...

  4. X-ray Diffraction Investigation of Annealing Behavior of Peened Surface Deformation Layer on Precipitation Hardening Stainless Steel

    Science.gov (United States)

    Huang, Junjie; Wang, Zhou; Gan, Jin; Yang, Ying; Huang, Feng; Wu, Gang; Meng, Qingshuai

    2018-05-01

    In order to investigate the recrystallization behavior of peened surface deformation layer of precipitation hardening stainless steel, a classic x-ray diffraction line profile analysis, Voigt method, was carried out on peened 17-4PH with different isothermal annealing temperatures. The activation energy of domain boundary migration ( Q a) and the activation energy of microstrain relaxation ( Q b) were calculated by regression analysis in different annealing temperature conditions. The results show that the value of Q a decreases with annealing temperature increasing, which is due to the influence of precipitation (ɛ-Cu) size on the movements of grain and subgrain boundaries. The maximum growth rate of ɛ-Cu particles occurs during 400 to 500 °C interval. Compared with growth behavior of domain size, microstrain relaxation behavior is less sensitive to precipitation particle size. The effects of annealing temperature and time on dislocation density are both significant when annealing temperature is lower than 500 °C. However, the effect of annealing temperature on dislocation density becomes insignificant when annealing temperature is higher than 500 °C. 300 °C annealing temperature only leads to the microstrain relaxation but nearly cannot lead to the domain size growth even if prolonging annealing time. Microstructure enhancement effect still exists in plastic deformation layer when 300 °C annealing temperature lasts for 60 min but nearly disappears when 600 °C annealing temperature lasts for 20 min.

  5. X-ray Diffraction Investigation of Annealing Behavior of Peened Surface Deformation Layer on Precipitation Hardening Stainless Steel

    Science.gov (United States)

    Huang, Junjie; Wang, Zhou; Gan, Jin; Yang, Ying; Huang, Feng; Wu, Gang; Meng, Qingshuai

    2018-04-01

    In order to investigate the recrystallization behavior of peened surface deformation layer of precipitation hardening stainless steel, a classic x-ray diffraction line profile analysis, Voigt method, was carried out on peened 17-4PH with different isothermal annealing temperatures. The activation energy of domain boundary migration (Q a) and the activation energy of microstrain relaxation (Q b) were calculated by regression analysis in different annealing temperature conditions. The results show that the value of Q a decreases with annealing temperature increasing, which is due to the influence of precipitation (ɛ-Cu) size on the movements of grain and subgrain boundaries. The maximum growth rate of ɛ-Cu particles occurs during 400 to 500 °C interval. Compared with growth behavior of domain size, microstrain relaxation behavior is less sensitive to precipitation particle size. The effects of annealing temperature and time on dislocation density are both significant when annealing temperature is lower than 500 °C. However, the effect of annealing temperature on dislocation density becomes insignificant when annealing temperature is higher than 500 °C. 300 °C annealing temperature only leads to the microstrain relaxation but nearly cannot lead to the domain size growth even if prolonging annealing time. Microstructure enhancement effect still exists in plastic deformation layer when 300 °C annealing temperature lasts for 60 min but nearly disappears when 600 °C annealing temperature lasts for 20 min.

  6. Combined effect of non-equilibrium solidification and thermal annealing on microstructure evolution and hardness behavior of AZ91 magnesium alloy

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Z.Z.; Yang, W., E-mail: weiyang@mail.nwpu.edu.cn; Chen, S.H.; Yu, H.; Xu, Z.F.

    2014-06-15