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Sample records for annealing temperature dependenceof

  1. Scalable effective-temperature reduction for quantum annealers via nested quantum annealing correction

    Science.gov (United States)

    Vinci, Walter; Lidar, Daniel A.

    2018-02-01

    Nested quantum annealing correction (NQAC) is an error-correcting scheme for quantum annealing that allows for the encoding of a logical qubit into an arbitrarily large number of physical qubits. The encoding replaces each logical qubit by a complete graph of degree C . The nesting level C represents the distance of the error-correcting code and controls the amount of protection against thermal and control errors. Theoretical mean-field analyses and empirical data obtained with a D-Wave Two quantum annealer (supporting up to 512 qubits) showed that NQAC has the potential to achieve a scalable effective-temperature reduction, Teff˜C-η , with 0 temperature of a quantum annealer. Such effective-temperature reduction is relevant for machine-learning applications. Since we demonstrate that NQAC achieves error correction via a reduction of the effective-temperature of the quantum annealing device, our results address the problem of the "temperature scaling law for quantum annealers," which requires the temperature of quantum annealers to be reduced as problems of larger sizes are attempted to be solved.

  2. Temperature Scaling Law for Quantum Annealing Optimizers.

    Science.gov (United States)

    Albash, Tameem; Martin-Mayor, Victor; Hen, Itay

    2017-09-15

    Physical implementations of quantum annealing unavoidably operate at finite temperatures. We point to a fundamental limitation of fixed finite temperature quantum annealers that prevents them from functioning as competitive scalable optimizers and show that to serve as optimizers annealer temperatures must be appropriately scaled down with problem size. We derive a temperature scaling law dictating that temperature must drop at the very least in a logarithmic manner but also possibly as a power law with problem size. We corroborate our results by experiment and simulations and discuss the implications of these to practical annealers.

  3. Temperature distribution study in flash-annealed amorphous ribbons

    International Nuclear Information System (INIS)

    Moron, C.; Garcia, A.; Carracedo, M.T.

    2003-01-01

    Negative magnetrostrictive amorphous ribbons have been locally current annealed with currents from 1 to 8 A and annealing times from 14 ms to 200 s. In order to obtain information about the sample temperature during flash or current annealing, a study of the temperature dispersion during annealing in amorphous ribbons was made. The local temperature variation was obtained by measuring the local intensity of the infrared emission of the sample with a CCD liquid nitrogen cooled camera. A distribution of local temperature has been found in spite of the small dimension of the sample

  4. Reduced annealing temperatures in silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.

    1981-01-01

    Cells irradiated to a fluence of 5x10,000,000,000,000/square cm showed short circuit current on annealing at 200 C, with complete annealing occurring at 275 C. Cells irradiated to 100,000,000,000,000/square cm showed a reduction in annealing temperature from the usual 500 to 300 C. Annealing kinetic studies yield an activation energy of (1.5 + or - 2) eV for the low fluence, low temperature anneal. Comparison with activation energies previously obtained indicate that the presently obtained activation energy is consistent with the presence of either the divacancy or the carbon interstitial carbon substitutional pair, a result which agrees with the conclusion based on defect behavior in boron-doped silicon.

  5. Global warming: Temperature estimation in annealers

    Directory of Open Access Journals (Sweden)

    Jack Raymond

    2016-11-01

    Full Text Available Sampling from a Boltzmann distribution is NP-hard and so requires heuristic approaches. Quantum annealing is one promising candidate. The failure of annealing dynamics to equilibrate on practical time scales is a well understood limitation, but does not always prevent a heuristically useful distribution from being generated. In this paper we evaluate several methods for determining a useful operational temperature range for annealers. We show that, even where distributions deviate from the Boltzmann distribution due to ergodicity breaking, these estimates can be useful. We introduce the concepts of local and global temperatures that are captured by different estimation methods. We argue that for practical application it often makes sense to analyze annealers that are subject to post-processing in order to isolate the macroscopic distribution deviations that are a practical barrier to their application.

  6. The changes of ADI structure during high temperature annealing

    OpenAIRE

    A. Krzyńska; M. Kaczorowski

    2010-01-01

    The results of structure investigations of ADI during it was annealing at elevated temperature are presented. Ductile iron austempered at temperature 325oC was then isothermally annealed 360 minutes at temperature 400, 450, 500 and 550oC. The structure investigations showed that annealing at these temperatures caused substantial structure changes and thus essential hardness decrease, which is most useful property of ADI from point of view its practical application. Degradation advance of the ...

  7. Burst annealing of high temperature GaAs solar cells

    Science.gov (United States)

    Brothers, P. R.; Horne, W. E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles.

  8. Burst annealing of high temperature GaAs solar cells

    International Nuclear Information System (INIS)

    Brothers, P.R.; Horne, W.E.

    1991-01-01

    One of the major limitations of solar cells in space power systems is their vulnerability to radiation damage. One solution to this problem is to periodically heat the cells to anneal the radiation damage. Annealing was demonstrated with silicon cells. The obstacle to annealing of GaAs cells was their susceptibility to thermal damage at the temperatures required to completely anneal the radiation damage. GaAs cells with high temperature contacts and encapsulation were developed. The cells tested are designed for concentrator use at 30 suns AMO. The circular active area is 2.5 mm in diameter for an area of 0.05 sq cm. Typical one sun AMO efficiency of these cells is over 18 percent. The cells were demonstrated to be resistant to damage after thermal excursions in excess of 600 degree C. This high temperature tolerance should allow these cells to survive the annealing of radiation damage. A limited set of experiments were devised to investigate the feasibility of annealing these high temperature cells. The effect of repeated cycles of electron and proton irradiation was tested. The damage mechanisms were analyzed. Limitations in annealing recovery suggested improvements in cell design for more complete recovery. These preliminary experiments also indicate the need for further study to isolate damage mechanisms. The primary objective of the experiments was to demonstrate and quantify the annealing behavior of high temperature GaAs cells. Secondary objectives were to measure the radiation degradation and to determine the effect of repeated irradiation and anneal cycles

  9. High-temperature annealing of graphite: A molecular dynamics study

    Science.gov (United States)

    Petersen, Andrew; Gillette, Victor

    2018-05-01

    A modified AIREBO potential was developed to simulate the effects of thermal annealing on the structure and physical properties of damaged graphite. AIREBO parameter modifications were made to reproduce Density Functional Theory interstitial results. These changes to the potential resulted in high-temperature annealing of the model, as measured by stored-energy reduction. These results show some resemblance to experimental high-temperature annealing results, and show promise that annealing effects in graphite are accessible with molecular dynamics and reactive potentials.

  10. Effect of annealing temperature on the mechanical properties of Zircaloy-4 cladding

    International Nuclear Information System (INIS)

    Beauregard, R.J.; Clevinger, G.S.; Murty, K.L.

    1977-01-01

    The mechanical properties of Zircaloy cladding materials are sensitive to those fabrication variables which have an effect on the preferred crystallographic orientation or texture of the finished tube. The effect of one such variable, the final annealing temperature, on various mechanical properties is examined using tube reduced Zircaloy-4 fuel rod cladding annealed at temperatures from 905F to 1060F. This temperature range provides cladding with varying degrees of recrystallization including full recrystallization. The burst strength of the cladding at 650F decreased with the annealing temperature reaching a saturation value at approximately 1000F. The total circumferential elongation increased with the annealing temperature reaching a maximum at approximately 1000F and decreasing at higher temperatures. Hoop creep characteristics of Zircaloy cladding were studied as a function of the annealing temperature using closed-end internal pressurization tests at 750F and hoop stresses of 10, 15, 20 and 25 ksi. The effect of annealing temperature on the room temperature mechanical anisotropy parameters, R and P, was studied. The R-parameter was essentially independent of the annealing temperature while the P-parameter increased with annealing temperature. The mechanical anisotropy parameters were also studied as a function of the test temperature from ambient to approximately 800F using continuously monitored high precision extensometry. (Auth.)

  11. Annealing temperature effect on self-assembled Au droplets on Si (111).

    Science.gov (United States)

    Sui, Mao; Li, Ming-Yu; Kim, Eun-Soo; Lee, Jihoon

    2013-12-13

    We investigate the effect of annealing temperature on self-assembled Au droplets on Si (111). The annealing temperature is systematically varied while fixing other growth parameters such as deposition amount and annealing duration clearly to observe the annealing temperature effect. Self-assembled Au droplets are fabricated by annealing from 50°C to 850°C with 2-nm Au deposition for 30 s. With increased annealing temperatures, Au droplets show gradually increased height and diameter while the density of droplets progressively decreases. Self-assembled Au droplets with fine uniformity can be fabricated between 550°C and 800°C. While Au droplets become much larger with increased deposition amount, the extended annealing duration only mildly affects droplet size and density. The results are systematically analyzed with cross-sectional line profiles, Fourier filter transform power spectra, height histogram, surface area ratio, and size and density plots. This study can provide an aid point for the fabrication of nanowires on Si (111).

  12. Influence of low-temperature annealing on InSb properties

    International Nuclear Information System (INIS)

    Tsitsina, N.P.; Fadeeva, A.P.; Vdovkina, E.E.; Baryshev, N.S.; Aver'yanov, I.S.

    1975-01-01

    Annealing at 200 deg C during 6 days does not cause inversion of conductivity in n-InSb, leads to the increase of the carrier concentration and the decrease of the specific resistance in samples both of n- and of p-type; these variations being more significant in the material of n-type. The existence of a level at a distance of 0.15-0.17 eV from the ceiling of the valency zone in non-annealed samples of InSb is confirmed. The level is of acceptor type and disappears with low-temperature annealing. The low-temperature annealing practically does not influence the lifetime in p-type samples and results in the 5-20-fold increase in the lifetime in n-type samples

  13. Low temperature thermal annealing in fast neutron-irradiated potassium permanganate

    Energy Technology Data Exchange (ETDEWEB)

    Owens, C W; Lecington, W C [New Hampshire Univ., Durham (USA). Dept. of Chemistry

    1975-01-01

    The effect of thermal annealing on the retention of recoil /sup 54/Mn as permanganate in crystalline KMnO/sub 4/ irradiated with fast neutrons at liquid nitrogen temperature has been studied. The retention after 4 hrs of annealing increases from about 8% at -196/sup 0/ to a maximum of 61% at 180/sup 0/, then decreases at higher temperatures. A single activation energy (approximately 0.01 eV) applies to the thermal annealing process between -196/sup 0/ and -40/sup 0/. Extrapolation of the data suggests that below -229/sup 0/ no thermal annealing would occur.

  14. Luminescence lifetimes in quartz: dependence on annealing temperature prior to beta irradiation

    International Nuclear Information System (INIS)

    Galloway, R.B.

    2002-01-01

    It is well known that the thermal history of a quartz sample influences the optically stimulated luminescence sensitivity of the quartz. It is found that the optically stimulated luminescence lifetime, determined from time resolved spectra obtained with pulsed stimulation, also depends on past thermal treatment. For samples at 20 deg. C during stimulation, the lifetime depends on beta dose and on duration of preheating at 220 deg. C prior to stimulation for quartz annealed at 600 deg. C and above, but is independent of these factors for quartz annealed at 500 deg. C and below. For stimulation at higher temperatures, the lifetime becomes shorter if the sample is held at temperatures above 125 deg. C during stimulation, in a manner consistent with thermal quenching. A single exponential decay is all that is required to fit the time resolved spectra for un-annealed quartz regardless of the temperature during stimulation (20-175 deg. C), or to fit the time resolved spectra from all samples held at 20 deg. C during stimulation, regardless of annealing temperature (20-1000 deg. C). An additional shorter lifetime is found for some combinations of annealing temperature and temperature during stimulation. The results are discussed in terms of a model previously used to explain thermal sensitisation. The luminescence lifetime data are best explained by the presence of two principal luminescence centres, their relative importance depending on the annealing temperature, with a third centre involved for limited combinations of annealing temperature and temperature during stimulation

  15. Note: A wide temperature range MOKE system with annealing capability.

    Science.gov (United States)

    Chahil, Narpinder Singh; Mankey, G J

    2017-07-01

    A novel sample stage integrated with a longitudinal MOKE system has been developed for wide temperature range measurements and annealing capabilities in the temperature range 65 K temperatures without adversely affecting the cryostat and minimizes thermal drift in position. In this system the hysteresis loops of magnetic samples can be measured simultaneously while annealing the sample in a magnetic field.

  16. High annealing temperature induced rapid grain coarsening for efficient perovskite solar cells.

    Science.gov (United States)

    Cao, Xiaobing; Zhi, Lili; Jia, Yi; Li, Yahui; Cui, Xian; Zhao, Ke; Ci, Lijie; Ding, Kongxian; Wei, Jinquan

    2018-08-15

    Thermal annealing plays multiple roles in fabricating high quality perovskite films. Generally, it might result in large perovskite grains by elevating annealing temperature, but might also lead to decomposition of perovskite. Here, we study the effects of annealing temperature on the coarsening of perovskite grains in a temperature range from 100 to 250 °C, and find that the coarsening rate of the perovskite grain increase significantly with the annealing temperature. Compared with the perovskite films annealed at 100 °C, high quality perovskite films with large columnar grains are obtained by annealing perovskite precursor films at 250 °C for only 10 s. As a result, the power conversion efficiency of best solar cell increased from 12.35% to 16.35% due to its low recombination rate and high efficient charge transportation in solar cells. Copyright © 2018. Published by Elsevier Inc.

  17. Different annealing temperature suitable for different Mg doped P-GaN

    Science.gov (United States)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.

    2017-04-01

    In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.

  18. Effect of annealing temperature on the mechanical properties of zircaloy-4 cladding

    International Nuclear Information System (INIS)

    Beauregard, R.J.; Clevinger, G.S.; Murty, K.L.

    1977-01-01

    The mechanical properties of zircaloy cladding materials are sensitive to those fabrication variables which have an effect on the preferred crystallographic orientation or texture of the finished tube. The effect of one such variable, the final annealing temperature, on various mechanical properties is examined using tube reduced zircaloy-4 fuel rod cladding annealed at temperatures from 905F to 1060F. This temperature range provides cladding with varying degrees of recrystallization including full recrystallization. Hoop creep characteristics of zircaloy cladding were studied as a function of the annealing temperature using closed-end internal pressurization tests at 750F and hoop stresses of 10, 15, 20 and 25 ksi. The critical annealing temperature at which a minimum creep strain occurs decreases as the applied stress increases. An additional test at 700F and 30 ksi hoop stress was conducted to demonstrate that the critical annealing temperature is essentially independent of the test temperature. Plausible explanations based on differing substructures developed in cold-worked stress-relieved material are forwarded. The effect of annealing temperature on the room temperature mechanical anisotropy parameters, R and P, was studied. R-parameters were determined from in situ transverse strain gage measurements in uniaxial tensile tests. P-parameters were calculated from uniaxial test data (R and yield stress) and hoop yield stress determined in biaxial, closed-end internal pressurization tests

  19. Effects of annealing temperature in a metal alloy nano-dot memory

    International Nuclear Information System (INIS)

    Lee, Jung Min; Lee, Gae Hun; Song, Yun Heub; Bea, Ji Cheol; Tanaka, Tetsu

    2011-01-01

    The annealing temperature dependence of the capacitance-voltage (C-V) characteristic has been studied in a metal-oxide semiconductor structure containing FePt nano-dots. Several in-situ annealing temperatures from 400 to ∼700 .deg. C in a high vacuum ambience (under 1 x 10 -5 Pa) were evaluated in view of the cell's characteristics and its reliability. Here, we demonstrate that the annealing temperature is significant for memory performance in an alloy metal nano-dot structure. A higher in-situ temperature provides better retention and a more reliable memory window. In the sample with an in-situ annealing condition of 700 .deg. C for 30 min, a memory window of 9.2 V at the initial stage was obtained, and a memory window of 6.2 V after 10 years was estimated, which is reliable for a non-volatile memory. From these results, the annealing condition for an alloy metal nano-dot memory is one of the critical parameters for the memory characteristics, and should be optimized for better memory performance.

  20. Synthesis and characterization of nickel oxide particulate annealed at different temperatures

    Science.gov (United States)

    Sharma, Khem Raj; Thakur, Shilpa; Negi, N. S.

    2018-04-01

    Nickel oxide has been synthesized by solution combustion technique. The nickel oxide ceramic was annealed at 600°C and 1000°C for 2 hours. Structural, electrical, dielectric and magnetic properties were analyzed which are strongly dependent upon the synthesis method. Structural properties were examined by X-ray diffractometer (XRD), which confirmed the purity and cubic phase of nickel oxide. XRD data reveals the increase in crystallite size and decrease in full width half maximum (FWHM) as the annealing temperature increases. Electrical conductivity is found to increase from 10-6 to 10-5 (Ω-1cm-1) after annealing. Dielectric constant is observed to increase from 26 to 175 when the annealing temperature is increased from 600°C to 1000°C. Low value of coercive field is found which shows weak ferromagnetic behavior of NiO. It is observed that all the properties of NiO particulate improve with increasing annealing temperature.

  1. Enhanced exchange bias in MnN/CoFe bilayers after high-temperature annealing

    Science.gov (United States)

    Dunz, M.; Schmalhorst, J.; Meinert, M.

    2018-05-01

    We report an exchange bias of more than 2700 Oe at room temperature in MnN/CoFe bilayers after high-temperature annealing. We studied the dependence of exchange bias on the annealing temperature for different MnN thicknesses in detail and found that samples with tMnN > 32nm show an increase of exchange bias for annealing temperatures higher than TA = 400 °C. Maximum exchange bias values exceeding 2000 Oe with reasonably small coercive fields around 600 Oe are achieved for tMnN = 42, 48 nm. The median blocking temperature of those systems is determined to be 180 °C after initial annealing at TA = 525 °C. X-ray diffraction measurements and Auger depth profiling show that the large increase of exchange bias after high-temperature annealing is accompanied by strong nitrogen diffusion into the Ta buffer layer of the stacks.

  2. Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.

    1980-01-01

    Deep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.

  3. Effects of annealing temperatures on the physicochemical properties of nickel-phosphorus deposits

    International Nuclear Information System (INIS)

    Bai, Allen; Hu, C.-C.

    2003-01-01

    The dependence of physicochemical properties, including microhardness, magnetism, morphology, crystalline information, roughness factor and hydrogen evolution ability, on the phosphorus content, varying from 0 to 28 atomic percentage (at.%), of Ni-P deposits with annealing in air at eight temperatures (i.e., 100, 200, 300, 400, 500, 600, 700 and 800 deg. C) were systematically compared. The microhardness reached a maximum at 400 deg. C due to the crystallization of Ni and Ni 3 P at 400 deg. C and the significant diffusion of Cu into the Ni-P deposit at temperatures ≥500 deg. C, confirmed by the depth profiles of Ni, P, Cu and O elements. The paramagnetism of Ni-P deposit was gradually transformed into ferromagnetism at 400 deg. C, attributable to the phase separation of Ni and Ni 3 P. The roughness factor, R a , of the deposits with P contents ≤12 at.% were increased with increasing the annealing temperature at temperatures a of the deposits with 17-28 at.% of P is approximately independent of the annealing temperature. The rate of hydrogen evolution decreased with increasing the annealing temperature because the specific activity (i/R a ) of the Ni-P deposits was decreased with increasing the annealing temperature

  4. Luminescence lifetimes in natural quartz annealed beyond its second phase inversion temperature

    International Nuclear Information System (INIS)

    Chithambo, M.L.

    2015-01-01

    The influence of annealing, irradiation dose, preheating and measurement temperature on luminescence lifetimes has been studied in quartz annealed at 1000 °C. The measurements were supplemented by studies on quartz annealed at 900 and 800 °C. Lifetimes increase with dose as well as with temperature and duration of annealing between 800 and 1000 °C. Preheating produces the same effect. The changes are accounted for in terms of hole-transfer from the non-radiative luminescence centre to and between radiative centres. The influence of measurement temperature on lifetimes depends on whether the stimulation is carried out from ambient to 200 °C or otherwise. This result is unlike that in quartz annealed at or below 500 °C where lifetimes are independent of the direction of heating. In particular, lifetimes decrease monotonically when measurements are made from 20 to 200 °C but not when recorded from 200 to 20 °C. The latter produces a pattern resembling that in quartz annealed up to 500 °C. The results are concluded as evidence of thermal effects on separate luminescence centres. In support of this, different values of the activation energy for thermal quenching were found for each supposed luminescence centre. The change of the corresponding luminescence intensity with temperature is also qualitatively consistent with this notion. - Highlights: • Luminescence lifetimes in natural quartz annealed beyond its second phase inversion temperature is reported. • Lifetimes increase with dose, annealing between 800 and 1000 °C, and preheating. • Lifetimes under stimulation temperature are affected by direction of heating. • Changes are accounted for in terms of hole-transfer luminescence centres.

  5. Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing.

    Science.gov (United States)

    Fang, F; Markwitz, A

    2009-05-01

    Silicon nanostructures, called Si nanowhiskers, are successfully synthesized on Si(100) substrate by high vacuum electron beam annealing. The onset temperature and duration needed for the Si nanowhiskers to grow was investigated. It was found that the onset and growth morphology of Si nanowhiskers strongly depend on the annealing temperature and duration applied in the annealing cycle. The onset temperature for nanowhisker growth was determined as 680 degrees C using an annealing duration of 90 min and temperature ramps of +5 degrees C s(-1) for heating and -100 degrees C s(-1) for cooling. Decreasing the annealing time at peak temperature to 5 min required an increase in peak temperature to 800 degrees C to initiate the nanowhisker growth. At 900 degrees C the duration for annealing at peak temperature can be set to 0 s to grow silicon nanowhiskers. A correlation was found between the variation in annealing temperature and duration and the nanowhisker height and density. Annealing at 900 degrees C for 0 s, only 2-3 nanowhiskers (average height 2.4 nm) grow on a surface area of 5 x 5 microm, whereas more than 500 nanowhiskers with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 degrees C for 0 s. Selected results are presented showing the possibility of controlling the density and height of Si nanowhisker growth for field emission applications by applying different annealing temperature and duration.

  6. Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

    Science.gov (United States)

    Jones, C. E.; Johnson, E. S.; Compton, W. D.; Noonan, J. R.; Streetman, B. G.

    1973-01-01

    Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

  7. Effect of the annealing temperature for the hydrogen Q-degradation on superconducting cavities

    International Nuclear Information System (INIS)

    Ota, Tomoko; Sukenobu, Satoru; Tanabe, Yoshio; Onishi, Yoshimichi; Noguchi, Shuichi; Ono, Masaaki; Saito, Kenji; Shishido, Toshio; Yamazaki, Yoshishige

    1997-01-01

    Hydrogen Q-degradation was studied in niobium superconducting cavities prepared by barrel polishing, and electropolishing without annealing, though a fast cooling down of cavities. Cavity performance with various annealing temperature were tested using a 1.3GHz single-cell cavity to compare the effects of annealing temperature for hydrogen Q-degradation. (author)

  8. Electrical behavior of amide functionalized graphene oxide and graphene oxide films annealed at different temperatures

    International Nuclear Information System (INIS)

    Rani, Sumita; Kumar, Mukesh; Kumar, Dinesh; Sharma, Sumit

    2015-01-01

    Films of graphene oxide (GO) and amide functionalized graphene oxides (AGOs) were deposited on SiO 2 /Si(100) by spin coating and were thermally annealed at different temperatures. Sheet resistance of GO and AGOs films was measured using four probe resistivity method. GO an insulator at room temperature, exhibits decrease in sheet resistance with increase in annealing temperature. However, AGOs' low sheet resistance (250.43 Ω) at room temperature further decreases to 39.26 Ω after annealing at 800 °C. It was observed that the sheet resistance of GO was more than AGOs up to 700 °C, but effect was reversed after annealing at higher temperature. At higher annealing temperatures the oxygen functionality reduces in GO and sheet resistance decreases. Sheet resistance was found to be annealing time dependent. Longer duration of annealing at a particular temperature results in decrease of sheet resistance. - Highlights: • Amide functionalized graphene oxides (AGOs) were synthesized at room temperature (RT). • AGO films have low sheet resistance at RT as compared to graphene oxide (GO). • Fast decrease in the sheet resistance of GO with annealing as compared to AGOs • AGOs were found to be highly dispersible in polar solvents

  9. Very low temperature rise laser annealing of radiation-damaged solar cells in orbit

    International Nuclear Information System (INIS)

    Poulek, V.

    1988-01-01

    Solar cells of all space objects are damaged by radiation in orbit. This damage, however, can be removed by laser annealing. A new in-orbit laser regeneration system for both body- and spin-stabilized space objects is proposed. For successful annealing of solar cells damaged by 10 years' radiation dose in orbit it is necessary for the temperature rise in the incidence point of the laser beam to reach about 400 0 C. By continuous regeneration, however, between two annealing cycles the solar cells are hit by about two orders of magnitude lower radiation dose. This makes it possible to carry out the regeneration at a temperature rise well under 1 0 C! If an optimal laser regeneration system is used, such low temperature rise laser annealing of radiation-damaged solar cells is possible. A semiconductor GaAlAs diode laser with output power up to 10 mW CW was used for annealing. Some results of the very low temperature rise annealing experiment are given in this paper. (author)

  10. The influence of electron irradiation at the various temperatures and annealing on carriers mobility at the low temperatures in neutron transmutation doped gallium arsenide

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Kurilovich, N.F.; Prokhorenko, T.A.; Troshchinskii, V.T.; Shesholko, V.K.

    1999-01-01

    The influence of electron irradiation at the various temperatures and annealing on measured at T=100 K carriers mobility in neutron transmutation doped GaAs have been investigated. It was detected that rate of mobility decreasing with irradiation dose increasing decreases when irradiation temperature increases. It was shown that at the same time it take place the radiation defects creating and their particular or full annealing (in the dependence on irradiation temperature). Radiation stimulated annealing (annealing that take place during irradiation at the elevated temperatures) is more effective than the annealing at the same temperatures that take place after crystals are irradiated at room temperature. It means that any defects annealing during irradiation at elevated temperatures take place at more low temperatures than that during annealing after irradiation at room temperature

  11. Effects of thermal annealing temperature and duration on hydrothermally grown ZnO nanorod arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Shin, C.M.; Heo, J.H.; Leem, J.Y. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of)], E-mail: hhryu@inje.ac.kr; Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Shin, B.C.; Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1, Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-03-15

    In this study, the effects of thermal annealing temperature and duration on ZnO nanorod arrays fabricated by hydrothermal method were investigated. The annealed ZnO/Si(1 1 1) substrate was used for ZnO nanorod array growth. The effects of annealing treatment on the structural and optical properties were investigated by scanning electron microscopy, X-ray diffraction, and room-temperature photoluminescence measurements. With the annealing temperature of 750 {sup o}C and the annealing duration of 10 min, both the structural and optical properties of the ZnO nanorod arrays improved significantly, as indicated in the X-ray diffraction and photoluminescence measurement.

  12. Effect of Anneal temperature and Time on Change of Texture and Hardness of Al-Cu-Mg

    International Nuclear Information System (INIS)

    Masrukan; Adolf Asih, S.

    2000-01-01

    Observation of the effect of annealing temperature to its texture and hardness of the Al-Cu-Mg has been done. In this experiments aluminium alloy powder and 5 pieces cubes of this alloy with size of 8 x 8 x 8 mm 3 were used. The powder was not annealed, 2 pieces cube were annealed for 20 hours at temperatures of 200 o C and 300 o respectively, finally 3 pieces cube were annealed at temperature of 400 o C. Texture measurement was done using x-ray diffraction with wave length of 1.78892 A using inverse pole figure method. The hardness testing results at constant temperature of 400 o C and various time indicated that the hardness values are decreased with increasing annealed time. Also, at hardness testing for constant time and various annealing temperatures indicated that the hardness values decreased with increasing annealing temperature

  13. Temperature distribution in graphite during annealing in air cooled reactors

    International Nuclear Information System (INIS)

    Oliveira Avila, C.R. de.

    1989-01-01

    A model for the evaluation temperature distributions in graphite during annealing operation in graphite. Moderated an-cooled reactors, is presented. One single channel and one dimension for air and graphite were considered. A numerical method based on finite control volumes was used for partioning the mathematical equations. The problem solution involves the use of unsteady equations of mass, momentum and energy conservation for air, and energy conservation for graphite. The source term was considered as stored energy release during annealing for describing energy conservation in the graphite. The coupling of energy conservation equations in air and graphite is performed by the heat transfer term betwen air and graphite. The results agree with experimental data. A sensitivity analysis shown that the termal conductivity of graphite and the maximum inlet channel temperature have great effect on the maximum temperature reached in graphite during the annealing. (author)

  14. Effect of substrate temperature and post annealing temperature on ZnO:Zn PLD thin film properties

    Science.gov (United States)

    Hasabeldaim, E.; Ntwaeaborwa, O. M.; Kroon, R. E.; Coetsee, E.; Swart, H. C.

    2017-12-01

    The pulsed laser deposition (PLD) substrate temperature and post-annealing temperature are effective methods to control the film optical and structural properties. The structure, morphology and optical properties of the deposited and post-annealed PLD ZnO:Zn films were studied. The films were deposited at different substrate temperatures of 50 °C, 200 °C and 400 °C. The films deposited at the substrate temperature of 50 °C and 200 °C were post-annealed in air at 400 °C and 600 °C for two hours. The films all had a highly preferential orientation with the hexagonal c-axis perpendicular to the substrate surface. The stress was found to be compressive stress with values -3.289 GPa, -4.864 GPa and -4.425 GPa for the film deposited at 50 °C, 200 °C and 400 °C, respectively. After post-annealing treatments, the stress of the films was almost completely released and stress-free films were obtained. The crystallite sizes were 19 nm, 25 nm and 39 nm, while the average particles sizes were 95 nm, 85 nm and 129 nm for the film deposited at 50 °C, 200 °C and 400 °C respectively. The crystallite sizes and particles sizes seemed to increase with the increase in the substrate temperature. Contrary to this, the change in crystallite sizes were inversely proportional to the particles size when increasing the post-annealing temperatures. Deconvoluted X-ray photoelectron spectroscopy peaks of the O1s binding energy region revealed that the films deposited at different substrate temperatures contained oxygen-related defects. Photoluminescence studies revealed that the films all emitted ultra-violet emission around 379 nm. The film deposited at 50 °C emitted a broad green emission centered at ∼524 nm. By increasing the substrate temperature up to 200 °C and 400 °C a new orange emission around 621 nm and 634 nm as well as a weak emission around 416 nm and 500 nm were observed, respectively. After post-annealing treatments, new bands over the visible region (blue, green

  15. Annealing temperature dependence of the structures and properties of Co-implanted ZnO films

    International Nuclear Information System (INIS)

    Chen, Bin; Tang, Kun; Gu, Shulin; Ye, Jiandong; Huang, Shimin; Gu, Ran; Zhang, Yang; Yao, Zhengrong; Zhu, Shunming; Zheng, Youdou

    2014-01-01

    Highlights: • To avoid the forming of Co clusters and explore the origin of the magnetism, detailed investigation on the properties of the Co-implanted ZnO films with a rather low dose of 8 × 10 15 cm −2 and high implantation energy of 1 MeV were carried out. • The crystalline structure of the damaged region caused by ion-implantation has been recovered via the thermal annealing treatment at the temperature of 900 °C and above. • The low temperature magnetic hysteresis loops have indicated paramagnetism for the annealed films with weak ferromagnetic characteristics. • The zero-field cooling (ZFC) magnetization curves of the Co-implanted ZnO samples have varied from concave shape to convex one as the annealing temperature increased from 750 °C to 1000 °C. - Abstract: The effects of thermal annealing treatment on the structural, electrical, optical and magnetic properties of Co-implanted ZnO (0 0 0 1) films have been investigated in detail. The crystalline structure of the damaged region caused by ion implantation has been recovered via the thermal annealing at the temperature of 900 °C and above, and no Co clusters or its related oxide phases have been observed. The electrical and optical properties of the annealed films have shown strong dependence on the annealing temperature. The zero field cooling magnetization curves of the annealed films have varied from concave shape to convex one as the annealing temperature increased from 750 °C to 1000 °C, which are possibly tuned by the changes of the ratio of the itinerant carriers over the localized spin density. The low temperature magnetic hysteresis loops have indicated paramagnetic behavior for the annealed films with weak ferromagnetic characteristics. The ferromagnetism is attributed to the substituted Co 2+ ions and vacancy defects, while the paramagnetism could be induced by ionized interstitial Zn defects

  16. Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films.

    Science.gov (United States)

    Sharma, Shashikant; Varma, Tarun; Asokan, K; Periasamy, C; Boolchandani, Dharmendar

    2017-01-01

    This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si 100 and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 °C to 600 °C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of 002 crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.

  17. Effect of high temperature annealing on defects and optical properties of ZnO single crystals

    International Nuclear Information System (INIS)

    Jiang, M.; Wang, D.D.; Zou, B.; Chen, Z.Q.; Kawasuso, A.; Sekiguchi, T.

    2012-01-01

    Hydrothermal grown ZnO single crystals were annealed in N 2 or O 2 between 900 and 1300 C. Positron lifetime measurements reveal a single lifetime in all the ZnO samples before and after annealing. The positron lifetime is about 181 ps after annealing at 900 C in either N 2 or O 2 atmosphere. However, increase of the positron lifetime is observed after further annealing the sample at higher temperatures up to 1300 C, and it has a faster increase in O 2 ambient. Temperature dependence measurements show that the positron lifetime has very slight increase with temperature for the 900 C annealed sample, while it shows notable variation for the sample annealed at 1300 C. This implied that annealing at high temperature introduces additional defects. These defects are supposed to be Zn vacancy-related defects. Cathodoluminescence (CL) measurements indicates enhancement of both UV and green emission after annealing, and the enhancement of green emission is much stronger for the samples annealed in O 2 ambient. The possible origin of green emission is tentatively discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

    International Nuclear Information System (INIS)

    Chai Xu-Zhao; Zhou Dong; Liu Bin; Xie Zi-Li; Han Ping; Xiu Xiang-Qian; Chen Peng; Lu Hai; Zhang Rong; Zheng You-Dou

    2015-01-01

    The effect of high-temperature annealing on the yellow and blue luminescence of the undoped GaN is investigated by photoluminescence (PL) and x-ray photoelectron spectroscopy (XPS). It is found that the band-edge emission in the GaN apparently increases, and the yellow luminescence (YL) and blue luminescence (BL) bands dramatically decrease after annealing at 700°C. At the annealing temperature higher than 900°C, the YL and BL intensities show an enhancement for the nitrogen annealed GaN. This fact should be attributed to the increment of the Ga and N vacancies in the GaN decomposition. However, the integrated PL intensity of the oxygen annealed GaN decreases at the temperature ranging from 900°C to 1000°C. This results from the capture of many photo-generated holes by high-density surface states. XPS characterization confirms that the high-density surface states mainly originate from the incorporation of oxygen atoms into GaN at the high annealing temperature, and even induces the 0.34eV increment of the upward band bending for the oxygen annealed GaN at 1000°C. (paper)

  19. High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayers

    International Nuclear Information System (INIS)

    Bhatt, Pramod; Ganeshan, V.; Reddy, V.R.; Chaudhari, S.M.

    2006-01-01

    High temperature annealing effect on structural and magnetic properties of Ti/Ni multilayer (ML) up to 600 deg. C have been studied and reported in this paper. Ti/Ni multilayer samples having constant layer thicknesses of 50 A each are deposited on float glass and Si(1 1 1) substrates using electron-beam evaporation technique under ultra-high vacuum (UHV) conditions at room temperatures. The micro-structural parameters and their evolution with temperature for as-deposited as well as annealed multilayer samples up to 600 deg. C in a step of 100 deg. C for 1 h are determined by using X-ray diffraction (XRD) and grazing incidence X-ray reflectivity techniques. The X-ray diffraction pattern recorded at 300 deg. C annealed multilayer sample shows interesting structural transformation (from crystalline to amorphous) because of the solid-state reaction (SSR) and subsequent re-crystallization at higher temperatures of annealing, particularly at ≥400 deg. C due to the formation of TiNi 3 and Ti 2 Ni alloy phases. Sample quality and surface morphology are examined by using atomic force microscopy (AFM) technique for both as-deposited as well as annealed multilayer samples. In addition to this, a temperature dependent dc resistivity measurement is also used to study the structural transformation and subsequent alloy phase formation due to annealing treatment. The corresponding magnetization behavior of multilayer samples after each stage of annealing has been investigated by using Magneto-Optical Kerr Effect (MOKE) technique and results are interpreted in terms of observed micro-structural changes

  20. Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1,100 C

    International Nuclear Information System (INIS)

    Zolper, J.C.; Han, J.; Biefeld, R.M.

    1997-01-01

    The activation annealing of Si-implanted GaN is reported for temperatures from 1,100 to 1,400 C. Although previous work has shown that Si-implanted GaN can be activated by a rapid thermal annealing at ∼1,100 C, it was also shown that significant damage remained in the crystal. Therefore, both AlN-encapsulated and uncapped Si-implanted GaN samples were annealed in a metal organic chemical vapor deposition system in a N 2 /NH 3 ambient to further assess the annealing process. Electrical Hall characterization shows increases in carrier density and mobility for annealing up to 1,300 C before degrading at 1,400 C due to decomposition of the GaN epilayer. Rutherford backscattering spectra show that the high annealing temperatures reduce the implantation induced damage profile but do not completely restore the as-grown crystallinity

  1. Annealing of low-temperature GaAs studied using a variable energy positron beam

    International Nuclear Information System (INIS)

    Keeble, D.J.; Umlor, M.T.; Asoka-Kumar, P.; Lynn, K.G.; Cooke, P.W.

    1993-01-01

    The annihilation characteristics of monoenergetic positrons implanted in a molecular beam epitaxy layer of low-temperature (LT) GaAs annealed at temperatures from 300 to 600 degree C were measured. A gallium vacancy concentration of approximately 3x10 17 cm -3 is inferred for the as-grown material. The S parameter increased significantly upon anneal to 500 degree C. The dominant positron traps in samples annealed at and below 400 degree C are distinct from those acting for samples annealed to 500 or 600 degree C. The change in S parameter for the 600 degree C annealed sample compared to the GaAs substrate, S LT,600 =1.047S sub , is consistent with divacancies or larger open volume defects

  2. Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study.

    Science.gov (United States)

    Pimentel, Ana; Ferreira, Sofia Henriques; Nunes, Daniela; Calmeiro, Tomas; Martins, Rodrigo; Fortunato, Elvira

    2016-04-20

    The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C.

  3. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  4. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  5. Implantation temperature and thermal annealing behavior in H{sub 2}{sup +}-implanted 6H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Li, B.S., E-mail: b.s.li@impcas.ac.cn; Wang, Z.G.; Jin, J.F.

    2013-12-01

    The effects of hydrogen implantation temperature and annealing temperature in 6H-SiC are studied by the combination of Rutherford backscattering in channeling geometry (RBS/C), high-resolution X-ray diffraction (HRXRD) and scanning electron microscopy (SEM). 6H-SiC wafers were implanted with 100 keV H{sub 2}{sup +} ions to a fluence of 2.5 × 10{sup 16} H{sub 2}{sup +} cm{sup −2} at room temperature (RT), 573 K and 773 K. Post-implantation, the samples were annealing under argon gas flow at different temperatures from 973 K to 1373 K for isochronal annealing (15 min). The relative Si disorder at the damage peak for the sample implanted at RT decreases gradually with increasing annealing temperature. However, the reverse annealing effect is found for the samples implanted at 573 K and 773 K. As-implantation, the intensity of in-plane compressive stress is the maximum as the sample was implanted at RT, and is the minimum as the sample was implanted at 573 K. The intensity of in-plane compressive stress for the sample implanted at RT decreases gradually with increasing annealing temperature, while the intensities of in-plane compressive stress for the sample implanted at 573 K and 773 K show oscillatory changes with increasing annealing temperature. After annealing at 1373 K, blisters and craters occur on the sample surface and their average sizes increase with increasing implantation temperature.

  6. Low-temperature annealing of radiation defects in electron-irradiated gallium phosphide

    International Nuclear Information System (INIS)

    Kolb, A.A.; Megela, I.G.; Buturlakin, A.P.; Goyer, D.B.

    1990-01-01

    The isochronal annealing of radiation defects in high-energy electron irradiated n-GaP monocrystals within the 77 to 300 K range has been investigated by optical and electrical techniques. The changes in conductance and charge carrier mobility as functions of annealing temperature as well as the variation of optical absorption spectra of GaP under irradiation and annealing provide evidence that most of radiation defects are likely secondary complexes of defects

  7. CdCl{sub 2} activation treatment: A comprehensive study by monitoring the annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Bing Lei; Rimmaudo, Ivan; Salavei, Andrei [LAPS-Laboratory for Applied Physics, Department of Computer Science, University of Verona, Ca' Vignal 1, Strada Le Grazie 15, 37134 Verona (Italy); Piccinelli, Fabio [Department of Biotechnology, University of Verona, Strada Le Grazie 15, 37134 Verona (Italy); Di Mare, Simone [LAPS-Laboratory for Applied Physics, Department of Computer Science, University of Verona, Ca' Vignal 1, Strada Le Grazie 15, 37134 Verona (Italy); Menossi, Daniele; Bosio, Alessio; Romeo, Nicola [Physics and Earth Science Department, University of Parma, V.le G.P. Usberti 7A, 43124 (Italy); Romeo, Alessandro, E-mail: alessandro.romeo@univr.it [LAPS-Laboratory for Applied Physics, Department of Computer Science, University of Verona, Ca' Vignal 1, Strada Le Grazie 15, 37134 Verona (Italy)

    2015-05-01

    CdTe thin film solar cells have demonstrated high scalability, high efficiency and low cost fabrication process. One of the key factors for the achievements of this technology is the transformation of the absorber layer by an activation treatment where chlorine reacts with CdTe in a controlled atmosphere or in air, improving the electrical properties of the absorber and enhancing the intermixing of the CdS/CdTe layers. With this work we study the activation process by analyzing the CdCl{sub 2} treatment made by wet deposition with different annealing temperatures from 310 °C up to 410 °C in air keeping the same CdCl{sub 2} concentration in methanol solution. In this way the whole dynamic of the chemical reaction from the minimum activation energy is analyzed. Activated CdTe layers have been analyzed by means of X-ray diffraction and atomic force microscopy. Finished devices with efficiencies from 8% for the low temperature annealing up to more than 14% for the high temperature ones have been thoroughly analyzed by current-voltage, capacitance-voltage and drive-level capacitance profiling techniques. The best performance has been achieved with an annealing temperature of 395 °C. - Highlights: • CdCl{sub 2} treatment with 6 different annealing temperatures has been studied. • The amount and the nature of defects change drastically with temperature. • Jsc is proportional to annealing temperature and to grain size. • Efficiency increases with annealing temperature until a threshold is reached.

  8. Electrically-inactive phosphorus re-distribution during low temperature annealing

    Science.gov (United States)

    Peral, Ana; Youssef, Amanda; Dastgheib-Shirazi, Amir; Akey, Austin; Peters, Ian Marius; Hahn, Giso; Buonassisi, Tonio; del Cañizo, Carlos

    2018-04-01

    An increased total dose of phosphorus (P dose) in the first 40 nm of a phosphorus diffused emitter has been measured after Low Temperature Annealing (LTA) at 700 °C using the Glow Discharge Optical Emission Spectrometry technique. This evidence has been observed in three versions of the same emitter containing different amounts of initial phosphorus. A stepwise chemical etching of a diffused phosphorus emitter has been carried out to prepare the three types of samples. The total P dose in the first 40 nm increases during annealing by 1.4 × 1015 cm-2 for the sample with the highly doped emitter, by 0.8 × 1015 cm-2 in the middle-doped emitter, and by 0.5 × 1015 cm-2 in the lowest-doped emitter. The presence of surface dislocations in the first few nanometers of the phosphorus emitter might play a role as preferential sites of local phosphorus gettering in phosphorus re-distribution, because the phosphorus gettering to the first 40 nm is lower when this region is etched stepwise. This total increase in phosphorus takes place even though the calculated electrically active phosphorus concentration shows a reduction, and the measured sheet resistance shows an increase after annealing at a low temperature. The reduced electrically active P dose is around 0.6 × 1015 cm-2 for all the emitters. This can be explained with phosphorus-atoms diffusing towards the surface during annealing, occupying electrically inactive configurations. An atomic-scale visual local analysis is carried out with needle-shaped samples of tens of nm in diameter containing a region of the highly doped emitter before and after LTA using Atom Probe Tomography, showing phosphorus precipitates of 10 nm and less before annealing and an increased density of larger precipitates after annealing (25 nm and less).

  9. Effect of Annealing Temperature on Broad Luminescence of Silver-Exchanged Zeolites Y and A

    Science.gov (United States)

    Gui, Sa Chu Rong; Lin, H.; Bao, W.; Wang, W.

    2018-05-01

    The annealing temperature dependence of luminescence properties of silver (Ag)-exchanged zeolites Y and A was studied. It was found that the absorbance and excitation/emission bands are strongly affected by the thermal treatments. With increase in annealing temperature, the absorbance of Ag in zeolite Y increases at first and then decreases. However, the position of the excitation/emission band in zeolite Y was found to be insensitive to the annealing temperature. In contrast, the excitation/emission bands in zeolite A are particularly sensitive to the annealing temperature. The difference of such temperature dependence in zeolites Y and A may be due to the different microporous structure of the two minerals. Moreover, the fact that this dependence is not observed in Ag-exchanged zeolite Y is likely to be due to the difficulty in dehydration of zeolite Y in air or due to the weak Ag+-Ag+ interaction in zeolite Y.

  10. Surface Impedance of Copper MOB Depending on the Annealing Temperature and Deformation Degree

    International Nuclear Information System (INIS)

    Kutovoj, V.A.; Nikolaenko, A.A.; Stoev, P.I.; Vinogradov, D.V.

    2006-01-01

    Results of researches of influence of annealing temperature and deformation degree on mechanical features of copper MOB are presented. It is shown that minimal surface resistance is observed in copper samples that were subject to pre-deformation and were annealed in the range of temperatures 873...923 K

  11. High-temperature annealing of proton irradiated beryllium – A dilatometry-based study

    Energy Technology Data Exchange (ETDEWEB)

    Simos, Nikolaos, E-mail: simos@bnl.gov [Brookhaven National Laboratory, Upton, NY, 11973 (United States); Elbakhshwan, Mohamed; Zhong, Zhong; Ghose, Sanjit [Brookhaven National Laboratory, Upton, NY, 11973 (United States); Savkliyildiz, Ilyas [Rutgers University (United States)

    2016-08-15

    S−200 F grade beryllium has been irradiated with 160 MeV protons up to 1.2 10{sup 20} cm{sup −2} peak fluence and irradiation temperatures in the range of 100–200 °C. To address the effect of proton irradiation on dimensional stability, an important parameter in its consideration in fusion reactor applications, and to simulate high temperature irradiation conditions, multi-stage annealing using high precision dilatometry to temperatures up to 740 °C were conducted in air. X-ray diffraction studies were also performed to compliment the macroscopic thermal study and offer a microscopic view of the irradiation effects on the crystal lattice. The primary objective was to qualify the competing dimensional change processes occurring at elevated temperatures namely manufacturing defect annealing, lattice parameter recovery, transmutation {sup 4}He and {sup 3}H diffusion and swelling and oxidation kinetics. Further, quantification of the effect of irradiation dose and annealing temperature and duration on dimensional changes is sought. The study revealed the presence of manufacturing porosity in the beryllium grade, the oxidation acceleration effect of irradiation including the discontinuous character of oxidation advancement, the effect of annealing duration on the recovery of lattice parameters recovery and the triggering temperature for transmutation gas diffusion leading to swelling.

  12. Radiation annealing mechanisms of low-alloy reactor pressure vessel steels dependent on irradiation temperature and neutron fluence

    International Nuclear Information System (INIS)

    Pachur, D.

    1982-01-01

    Heat treatment after irradiation of reactor pressure vessel steels showed annealing of irradiation embrittlement. Depending on the irradiation temperature, the embrittlement started to anneal at about 220 0 C and was completely annealed at 500 0 C with 4 h of annealing time. The annealing behavior was normally measured in terms of the Vickers hardness increase produced by irradiation relative to the initial hardness as a function of the annealing temperature. Annealing results of other mechanical properties correspond to hardness results. During annealing, various recovery mechanisms occur in different temperature ranges. These are characterized by activation energies from 1.5 to 2.1 eV. The individual mechanisms were determined by the different time dependencies at various temperatures. The relative contributions of the mechanisms showed a neutron fluence dependence, with the lower activation energy mechanisms being predominant at low fluence and vice versa. In the temperature range where partial annealing of a mechanism took place during irradiation, an increase in activation energy was observed. Trend curves for the increase in transition temperature with irradiation, for the relative increase of Vickers hardness and yield strength, and for the relative decrease of Charpy-V upper shelf energy are interpreted by the behavior of different mechanisms

  13. Growth of Ge/Si(100) Nanostructures by Radio-Frequency Magnetron Sputtering: the Role of Annealing Temperature

    Institute of Scientific and Technical Information of China (English)

    ALIREZA Samavati; S. K. Ghoshal; Z. Othaman

    2012-01-01

    Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined.Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃,700℃ and 800℃ for 2 min at nitrogen ambient pressure.Atomic force microscopy,field emission scanning electron microscopy,visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed.The results for the annealing temperature-dependent sample morphology and the optical properties are presented.The density,size and roughness are found to be strongly influenced by the annealing temperature.A red shift of ~0.29 eV in the PL peak is observed with increasing annealing temperature.%Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined. Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃, 700℃ and 800℃ for 2 min at nitrogen ambient pressure. Atomic force microscopy, field emission scanning electron microscopy, visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed. The results for the annealing temperature-dependent sample morphology and the optical properties are presented. The density, size and roughness are found to be strongly influenced by the annealing temperature. A red shift of ~0.29 eV in the PL peak is observed with increasing annealing temperature.

  14. Thermoelectric properties by high temperature annealing

    Science.gov (United States)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Kumar, Shankar (Inventor); Lee, Hohyun (Inventor)

    2009-01-01

    The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.

  15. Effect of annealing temperature on the crystalline quality and phase transformation of chemically deposited CdSe films

    International Nuclear Information System (INIS)

    Zapata-Torres, M.; Chale-Lara, F.; Caballero-Briones, F.; Calzadilla, O.

    2005-01-01

    Polycrystalline CdSe thin films were grown on glass substrates by chemical bath deposition at 50 C. The samples were annealed in air atmosphere at different temperatures and characterized by X-ray diffraction and Raman spectroscopy. It was found that the as-grown films have cubic structure. These samples maintain their cubic structure for annealing temperatures between 60 C and 300 C. For annealing temperatures higher than 300 C we obtain a mixture of cubic and hexagonal phases. The analysis made by X-ray diffraction and Raman dispersion show that the samples annealed at temperatures under the phase-transition temperature increase their crystalline quality. In order to determinate the temperature for the complete transition of the cubic phase, we used the precipitated material obtained during the grown of the CdSe films. This material was annealed on air atmosphere between 300 C and 500 C with 50 intervals. The samples were measured by X-ray diffraction. The samples maintained the cubic structure if the annealing temperature is under 300 C. For temperatures between 300 C and 450 C we found a mixture of cubic and hexagonal phase. For an annealing temperature of 500 C we obtain only the hexagonal phase. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Temperature-dependent photoluminescence analysis of ZnO nanowire array annealed in air

    Science.gov (United States)

    Sun, Yanan; Gu, Xiuquan; Zhao, Yulong; Wang, Linmeng; Qiang, Yinghuai

    2018-05-01

    ZnO nanowire arrays (NWAs) were prepared on transparent conducting fluorine doped tin oxide (FTO) substrates through a facile hydrothermal method, followed by a 500 °C annealing to improve their crystalline qualities and photoelectrochemical (PEC) activities. It was found that the annealing didn't change the morphology, but resulted in a significant reduction of the donor concentration. Temperature-dependent photoluminescence (PL) was carried out for a comprehensive analysis of the effect from annealing. Noteworthy, four dominant peaks were identified from the 10 K spectrum of a 500 °C annealed sample, and they were assigned to FX, D0X, (e, D0) and (e, D0) -1LO, respectively. Of them, the FX emission was only existed below 130 K, while the room-temperature (RT) PL spectrum was dominated by the D0X emission.

  17. Physical properties of Fe doped In_2O_3 magnetic semiconductor annealed in hydrogen at different temperature

    International Nuclear Information System (INIS)

    Baqiah, H.; Ibrahim, N.B.; Halim, S.A.; Chen, S.K.; Lim, K.P.; Kechik, M.M. Awang

    2016-01-01

    The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600 °C) on physical properties of In_2_−_xFe_xO_3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In_2O_3 phase structure when annealed in hydrogen at 300–500 °C, however when annealed in hydrogen at 600 °C the film has a mixed phase structure of In_2O_3 and In phases. The electrical measurements show that the carrier concentrations of the films decrease with the increase of hydrogen-annealing temperature in the range 300–500 °C. The optical band gap of the films decreases with increasing hydrogen-annealing temperatures. The saturation magnetisation, Ms, and coercivity of films increase with the increment of hydrogen annealing temperature. The film annealed at 300 °C has the lowest resistivity, ρ=0.03 Ω cm, and the highest carrier concentrations, n=6.8×10"1"9 cm"−"3, while film annealed at 500 °C has both good electrical (ρ=0.05 Ω.cm and n=2.2×10"1"9 cm"−"3) and magnetic properties, Ms=21 emu/cm"-"3. - Highlights: • Physical properties of films were sensitive to hydrogen-annealing temperature. • Magnetisation, Ms, of films increased with increase of hydrogen annealing temperature. • Film annealed in hydrogen at 300 °C has the lowest resistivity, ρ=0.03 Ω cm. • Film annealed in hydrogen at 600 °C has highest magnetisation, Ms=30 emu/cm"3.

  18. Interference effect on annealing temperature of A and E centers in silicon.

    Science.gov (United States)

    Fang, P. H.; Tanaka, T.

    1971-01-01

    The significance of recent experimental observations on the annealing defects in n-type silicon has been examined. The observed anomalous annealing temperatures of A and E centers and their impurity concentration dependence are explained by an interference between the two centers.

  19. Lateral Temperature-Gradient Method for High-Throughput Characterization of Material Processing by Millisecond Laser Annealing.

    Science.gov (United States)

    Bell, Robert T; Jacobs, Alan G; Sorg, Victoria C; Jung, Byungki; Hill, Megan O; Treml, Benjamin E; Thompson, Michael O

    2016-09-12

    A high-throughput method for characterizing the temperature dependence of material properties following microsecond to millisecond thermal annealing, exploiting the temperature gradients created by a lateral gradient laser spike anneal (lgLSA), is presented. Laser scans generate spatial thermal gradients of up to 5 °C/μm with peak temperatures ranging from ambient to in excess of 1400 °C, limited only by laser power and materials thermal limits. Discrete spatial property measurements across the temperature gradient are then equivalent to independent measurements after varying temperature anneals. Accurate temperature calibrations, essential to quantitative analysis, are critical and methods for both peak temperature and spatial/temporal temperature profile characterization are presented. These include absolute temperature calibrations based on melting and thermal decomposition, and time-resolved profiles measured using platinum thermistors. A variety of spatially resolved measurement probes, ranging from point-like continuous profiling to large area sampling, are discussed. Examples from annealing of III-V semiconductors, CdSe quantum dots, low-κ dielectrics, and block copolymers are included to demonstrate the flexibility, high throughput, and precision of this technique.

  20. High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide

    Science.gov (United States)

    Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

    1992-05-01

    High resolution x-ray diffraction methods have been used to characterize GaAs grown at low substrate temperatures by molecular beam epitaxy and to examine the effects of post-growth annealing on the structure of the layers. Double crystal rocking curves from the as-deposited epitaxial layer show well-defined interference fringes, indicating a high level of structural perfection despite the presence of excess arsenic. Annealing at temperatures from 700 to 900 °C resulted in a decrease in the perpendicular lattice mismatch between the GaAs grown at low temperature and the substrate from 0.133% to 0.016% and a decrease (but not total elimination) of the visibility of the interference fringes. Triple-crystal diffraction scans around the 004 point in reciprocal space exhibited an increase in the apparent mosaic spread of the epitaxial layer with increasing anneal temperature. The observations are explained in terms of the growth of arsenic precipitates in the epitaxial layer.

  1. Room-temperature annealing of Si implantation damage in InP

    International Nuclear Information System (INIS)

    Akano, U.G.; Mitchell, I.V.

    1991-01-01

    Spontaneous recovery at 295 K of Si implant damage in InP is reported. InP(Zn) and InP(S) wafers of (100) orientation have been implanted at room temperature with 600 keV Si + ions to doses ranging from 3.6x10 11 to 2x10 14 cm -2 . Room-temperature annealing of the resultant damage has been monitored by the Rutherford backscattering/channeling technique. For Si doses ≤4x10 13 cm -2 , up to 70% of the initial damage (displaced atoms) annealed out over a period of ∼85 days. The degree of recovery was found to depend on the initial level of damage. Recovery is characterized by at least two time constants t 1 2 ∼100 days. Anneal rates observed between 295 and 375 K are consistent with an activation energy of 1.2 eV, suggesting that the migration of implant-induced vacancies is associated with the reordering of the InP lattice

  2. Influence of annealing temperature on the Dy diffusion process in NdFeB magnets

    Science.gov (United States)

    Hu, Sheng-qing; Peng, Kun; Chen, Hong

    2017-03-01

    Sintered NdFeB magnets were coated with a layer of Dy metal using electron beam evaporation method and then annealed at various temperatures to investigate the temperature dependence of Dy diffusion process in NdFeB magnets. A Dy-rich phase was observed along the grain boundaries after the grain boundary diffusion process, the diffusion coefficients of various temperatures were obtained, the diffusion coefficients of Dy along the grain boundaries at 800 °C and 900 °C were determined to be 9.8×10-8 cm2 s-1 and 2.4×10-7 cm2 s-1, respectively. The diffusion length depended on the annealing temperature and the maximum diffusion length of approximately 1.8 mm and 3.0 mm can be obtained after annealing at 800 °C and 900 °C for 8 h. Higher diffusion temperature results in the diffusion not only along the grain boundaries but also into grains and then decrease in magnetic properties. The optimum annealing conditions can be determined as 900 °C for 8 h. The coercivity was improved from 1040 kA/m to 1450 kA/m and its magnetization has no significant reduction after the grain boundary diffusion process at the optimum annealing conditions.

  3. Enhanced adhesion between carbon nanotubes and substrate surfaces by low-temperature annealing

    International Nuclear Information System (INIS)

    Jang, Chi Woong; Byun, Young Tae; Woo, Deok Ha; Lee, Seok; Jhon, Young Min

    2012-01-01

    We enhanced the adhesion forces between carbon nanotubes (CNTs) and the substrate surface by using a low-temperature annealing process at 180 .deg. C for 300 s to protect the CNTs throughout the processes in photolithography for fabricating CNT-based devices, especially ion and bio sensors which are always exposed to liquids. The adhesion force was tested by using the adhesion durability test of soaking the fabricated CNT field effect transistors (CNT-FETs) in de-ionized water at room temperature for 300 s, and the adsorption quantities of CNTs were analyzed by using I - V measurements on the CNT-FETs before and after each adhesion durability test. The conductance change of the CNT-FETs fabricated with the annealing process was considerably decreased by more than a factor of 10 5 compared to that without the annealing process, implying that CNTs adhere much more strongly to the substrate after the annealing process.

  4. Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

    Energy Technology Data Exchange (ETDEWEB)

    Laube, J., E-mail: laube@imtek.de; Nübling, D.; Beh, H.; Gutsch, S.; Hiller, D.; Zacharias, M.

    2016-03-31

    Conductive zinc oxide (ZnO) films deposited by atomic layer deposition were studied as function of post-annealing treatments. Effusion experiments were conducted on ZnO films deposited at different temperatures. The influence of different annealing atmospheres on the resistivity of the films was investigated and compared to reference samples. It was found that the influence of the deposition temperature on the resistivity is much higher than that of subsequent annealings. This leads to the conclusion that reduction of the resistivity by diffusion of different gases, such as oxygen and hydrogen, into annealed ZnO films is unlikely. - Highlights: • Conformal growth of ZnO-ALD over a temperature range of 25 °C up to 300 °C. • Post-annealing in different atmospheres (H{sub 2}, O{sub 2}, vacuum) and temperatures. • Analysis of film-conductivity and effusion characteristic.

  5. In vitro behavior of MC3T3-E1 preosteoblast with different annealing temperature titania nanotubes.

    Science.gov (United States)

    Yu, W Q; Zhang, Y L; Jiang, X Q; Zhang, F Q

    2010-10-01

    Titanium oxide nanotube layers by anodization have excellent potential for dental implants because of good bone cell promotion. It is necessary to evaluate osteoblast behavior on different annealing temperature titania nanotubes for actual implant designs.  Scanning Electron Microscopy, X-Ray polycrystalline Diffractometer (XRD), X-ray photoelectron Spectroscope, and Atomic Force Microscopy (AFM) were used to characterize the different annealing temperature titania nanotubes. Confocal laser scanning microscopy, MTT, and Alizarin Red-S staining were used to evaluate the MC3T3-E1 preosteoblast behavior on different annealing temperature nanotubes.  The tubular morphology was constant when annealed at 450°C and 550°C, but collapsed when annealed at 650°C. XRD exhibited the crystal form of nanotubes after formation (amorphous), after annealing at 450°C (anatase), and after annealing at 550°C (anatase/rutile). Annealing led to the complete loss of fluorine on nanotubes at 550°C. Average surface roughness of different annealing temperature nanotubes showed no difference by AFM analysis. The proliferation and mineralization of preostoblasts cultured on anatase or anatase/rutile nanotube layers were shown to be significantly higher than smooth, amorphous nanotube layers.  Annealing can change the crystal form and composition of nanotubes. The nanotubes after annealing can promote osteoblast proliferation and mineralization in vitro. © 2010 John Wiley & Sons A/S.

  6. Influence of annealing temperature on Raman and photoluminescence spectra of electron beam evaporated TiO₂ thin films.

    Science.gov (United States)

    Vishwas, M; Narasimha Rao, K; Chakradhar, R P S

    2012-12-01

    Titanium dioxide (TiO(2)) thin films were deposited on fused quartz substrates by electron beam evaporation method at room temperature. The films were annealed at different temperatures in ambient air. The surface morphology/roughness at different annealing temperatures were analyzed by atomic force microscopy (AFM). The crystallinity of the film has improved with the increase of annealing temperature. The effect of annealing temperature on optical, photoluminescence and Raman spectra of TiO(2) films were investigated. The refractive index of TiO(2) films were studied by envelope method and reflectance spectra and it is observed that the refractive index of the films was high. The photoluminescence intensity corresponding to green emission was enhanced with increase of annealing temperature. The peaks in Raman spectra depicts that the TiO(2) film is of anatase phase after annealing at 300°C and higher. The films show high refractive index, good optical quality and photoluminescence characteristics suggest that possible usage in opto-electronic and optical coating applications. Copyright © 2012 Elsevier B.V. All rights reserved.

  7. Effects of Solution Annealing Temperature on the Galvanic Corrosion Behavior of the Super Duplex Stainless Steels

    Science.gov (United States)

    Lee, Jun-Seob; Jeon, Soon-Hyeok; Park, Yong-Soo

    2013-02-01

    This study investigated the active dissolution of super duplex stainless steel (SDSS) at various solution annealing temperatures. The active dissolutions of the α-phase and γ-phase were compared, and the effects of the surface area ratio on the active dissolutions of both phases were investigated. There were two peaks in the active-passive transition region in the potentiodynamic test in the modified green-death solution. The two peaks changed as the solution annealing temperature was increased from 1050 to 1150 °C. The solution annealing temperature difference affected the critical anodic current densities. This provides useful information for determining the appropriate solution annealing temperature in the modified green-death solution for SDSS.

  8. Cesium lead iodide solar cells controlled by annealing temperature.

    Science.gov (United States)

    Kim, Yu Geun; Kim, Tae-Yoon; Oh, Jeong Hyeon; Choi, Kyoung Soon; Kim, Youn-Jea; Kim, Soo Young

    2017-02-22

    An inorganic lead halide perovskite film, CsPbI 3 , used as an absorber in perovskite solar cells (PSCs) was optimized by controlling the annealing temperature and the layer thickness. The CsPbI 3 layer was synthesized by one-step coating of CsI mixed with PbI 2 and a HI additive in N,N-dimethylformamide. The annealing temperature of the CsPbI 3 film was varied from 80 to 120 °C for different durations and the thickness was controlled by changing the spin-coating rpm. After annealing the CsPbI 3 layer at 100 °C under dark conditions for 10 min, a black phase of CsPbI 3 was formed and the band gap was 1.69 eV. Most of the yellow spots disappeared, the surface coverage was almost 100%, and the rms roughness was minimized to 3.03 nm after annealing at 100 °C. The power conversion efficiency (PCE) of the CsPbI 3 based PSC annealed at 100 °C was 4.88%. This high PCE value is attributed to the low yellow phase ratio, high surface coverage, low rms roughness, lower charge transport resistance, and lower charge accumulation. The loss ratio of the PCE of the CH 3 NH 3 PbI x Cl 3-x and CsPbI 3 based PSCs after keeping in air was 47 and 26%, respectively, indicating that the stability of the CsPbI 3 based PSC is better than that of the CH 3 NH 3 PbI x Cl 3-x based PSC. From these results, it is evident that CsPbI 3 is a potential candidate for solar cell applications.

  9. The influence of annealing temperature on the strength of TRISO coated particles

    International Nuclear Information System (INIS)

    Rooyen, I.J. van; Neethling, J.H.; Rooyen, P.M. van

    2010-01-01

    The integrity of the Pebble Bed Modular Reactor (PBMR) fuel, and specifically the SiC layer system of the Tristructural Isotropic (TRISO) coated particle (CP), namely inner pyrolytic carbon, silicon carbide and outer pyrolytic carbon (I-PyC-SiC-O-PyC), determines the containment of fission products. The PBMR fuel consists of TRISO coated particles (CPs) embedded in a graphite matrix. One of the characterization techniques investigated by PBMR is the determination of strength of CPs. It is a well known metallurgical fact that temperature, amongst many other parameters, may influence the strength of a material. A recently developed method for measuring the strength of the TRISO coated particles was used and is briefly described in this article. The advantages of this method are demonstrated by the comparison of strength measurements of five experimental PBMR CP batches as a function of annealing temperature. Significant modification of strength after annealing was measured with increased temperature within the range 1000-2100 o C. The interesting feature of decreasing standard deviation of the strength with increasing temperature will also be discussed with a possible explanation. A significant difference in coated particle strength is also demonstrated for two CP batches with layer thickness on the extremities of the SiC layer thickness specification. The effect of long duration annealing on these strength values will also be demonstrated by comparing results from 1 h to 100 h annealing periods of coated particles at a temperature of 1600 o C.

  10. Evolution of microstructural defects with strain effects in germanium nanocrystals synthesized at different annealing temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Minghuan; Cai, Rongsheng; Zhang, Yujuan; Wang, Chao [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Chemistry and Chemical Engineering, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Wang, Yiqian, E-mail: yqwang@qdu.edu.cn [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308, Ningxia Road, Qingdao 266071 (China); Ross, Guy G.; Barba, David [INRS-EMT, 1650 Boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

    2014-07-01

    Ge nanocrystals (Ge-ncs) were produced by implantation of {sup 74}Ge{sup +} into a SiO{sub 2} film on (100) Si, followed by high-temperature annealing from 700 °C to 1100 °C. Transmission electron microscopy (TEM) studies show that the average size of Ge-ncs increases with the annealing temperature. High-resolution TEM (HRTEM) investigations reveal the presence of planar and linear defects in the formed Ge-ncs, whose relative concentrations are determined at each annealing temperature. The relative concentration of planar defects is almost independent of the annealing temperature up to 1000 °C. However, from 1000 °C to 1100 °C, its concentration decreases dramatically. For the linear defects, their concentration varies considerably with the annealing temperatures. In addition, by measuring the interplanar spacing of Ge-ncs from the HRTEM images, a strong correlation is found between the dislocation percentage and the stress field intensity. Our results provide fundamental insights regarding both the presence of microstructural defects and the origin of the residual stress field within Ge-ncs, which can shed light on the fabrication of Ge-ncs with quantified crystallinity and appropriate size for the advanced Ge-nc devices. - Highlights: • Growth of Ge nanocrystals at different annealing temperatures was investigated. • Strain field has great effects on the formation of dislocations. • Different mechanisms are proposed to explain growth regimes of Ge nanocrystals.

  11. Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.

    Science.gov (United States)

    Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

    2016-04-27

    The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4-0.7 eV to 0.2-0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.

  12. The Effect of Annealing Temperature on Nickel on Reduced Graphene Oxide Catalysts on Urea Electrooxidation

    International Nuclear Information System (INIS)

    Glass, Dean E.; Galvan, Vicente; Prakash, G.K. Surya

    2017-01-01

    Highlights: •Nickel was reduced on graphene oxide and annealed under argon from 300 to 700 °C. •Nickel was oxidized from the removal of oxygen groups on the graphene oxide. •Higher annealed catalysts displayed decreased urea electrooxidation currents. •Micro direct urea/hydrogen peroxide fuel cells were employed for the first time. •Ni/rGO catalysts displayed enhanced fuel cell performance than the bare nickel. -- Abstract: The annealing temperature effects on nickel on reduced graphene oxide (Ni/rGO) catalysts for urea electrooxidation were investigated. Nickel chloride was directly reduced in an aqueous solution of graphene oxide (GO) followed by annealing under argon at 300, 400, 500, 600, and 700 °C, respectively. X-ray Diffraction (XRD) patterns revealed an increase in the crystallite size of the nickel nanoparticles while the Raman spectra displayed an increase in the graphitic disorder of the reduced graphene oxide at higher annealing temperatures due to the removal of oxygen functional groups. The Ni/rGO catalysts annealed at higher temperatures displayed oxidized nickel surface characteristics from the Ni 2p X-ray Photoelectron Spectra (XPS) due to the oxidation of the nickel from the oxygen functional groups in the graphitic lattice. In the half-cell testing, the onset potential of urea electrooxidation decreased while the urea electrooxidation currents decreased as the annealing temperature was increased. The nickel catalyst annealed at 700 °C displayed a 31% decrease in peak power density while the catalyst annealed at 300 °C displayed a 13% increase compared with the unannealed Ni/rGO catalyst in the micro direct urea/hydrogen peroxide fuel cells tests.

  13. The origin of the coercivity reduction of Nd–Fe–B sintered magnet annealed below an optimal temperature

    International Nuclear Information System (INIS)

    Akiya, T.; Sasaki, T.T.; Ohkubo, T.; Une, Y.; Sagawa, M.; Kato, H.; Hono, K.

    2013-01-01

    In order to understand the origin of the coercivity reduction in a sintered Nd–Fe–B magnet that is annealed below an optimal annealing temperature, we performed focused ion beam/scanning electron microscopy tomography of post-sinter annealed magnets. A number of grain boundary cracks were observed between Nd 2 Fe 14 B grains and Nd-rich phases in the sample annealed below the optimal temperature. We deduced micromagnetic parameters α and N eff by fitting the temperature dependence of the coercivity. While α was constant regardless of the annealing conditions, N eff increased in the sample annealed below the optimal temperature with the reduced coercivity. This indicates that the reduction of the coercivity is due to the local stray field at the cracks. - Highlights: • We performed FIB/SEM tomography of post-sinter annealed magnets. • A number of grain boundary cracks were observed in the low-coercivity sample. • Parameters α and N eff were deduced from the temperature dependence of coercivity. • While α was constant, N eff increased in the low-coercivity sample. • The reduction of the coercivity is due to the local stray field at the cracks

  14. Preparation of (Bi, Pb)-2223/Ag tapes by high temperature sintering and post-annealing process

    DEFF Research Database (Denmark)

    Hua, L.; Grivel, Jean-Claude; Andersen, L.G.

    2002-01-01

    A novel heat treatment process was developed to fabricate (Bi, Pb)-2223/Ag tapes with high critical current density (J(c)). The process can be divided into two parts: reformation and post-annealing. Tapes were first heated to the maximum temperature (830-860 degreesC) followed by slow cooling...... (reformation). Then, tape, were annealed between 760 and 820 degreesC (post-annealing). Reformation is expected to produce a large amount of liquid phase which may heat microcracks, decrease porosity, and improve grain growth. However, since the sintering temperature is beyond the Bi-2223 single-phase region......-energy synchrotron XRD and SEM/EDX. Some process parameters e.g. sintering temperature. cooling rate. and post-annealing time were optimised. (C) 2002 Elsevier Science B.V. All rights reserved....

  15. Annealing temperatures influence luminescence of YBO{sub 3}: Ce{sup 3+}, Yb{sup 3+} prepared by solvothermal method

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yue [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi' an, Shaanxi, 710069 (China); Hu, Xiaoyun, E-mail: hxy3275@nwu.edu.cn [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi' an, Shaanxi, 710069 (China); Zhan, Suchang; Sun, Xiao; Wang, Zhizhong; Miao, Tian; Miao, Hui [Department of Physics, Northwest University, No. 229 Taibai North Road, Xi' an, Shaanxi, 710069 (China); Fan, Jun [School of Chemical Engineering, Northwest University, No. 229 Taibai North Road, Xi' an, Shaanxi, 710069 (China)

    2014-08-01

    Near-infrared (NIR) quantum cutting (QC) YBO{sub 3}: Ce{sup 3+}, Yb{sup 3+} phosphors have been synthesized by solvothermal method with further heat treatment. The emission spectrum shows the Vis and NIR emission intensity of samples are both increasingly strong as annealing temperature rises when the annealing temperature is above 600 °C. Meanwhile the Vis emission of unannealed sample is observed. SEM images show that the sample annealed at different temperatures (200–900 °C) is mainly composed of nanosheets like potato chips, which is melt down granules after annealing treatment above 1000 °C.The crystal texture of all samples whether annealed or not is hexagonal through the analysis of XRD. The Raman and infrared spectrums indicate that the boron ions exist of BO{sub 4} units when the annealing temperature is above 600 °C. The infrared profile of unannealed sample shows that there are N–H units in the samples without annealing treatment. - Highlights: • The nanosheets like potato chips are synthesized by solvothermal method. • Annealing temperature is a great effect for luminescence of sample. • The boron ions exist of BO{sub 4} when the annealing temperature is above 600 °C, whose quantity determines the luminescent intensity. • According to the infrared profile of unannealed sample, there are N–H units, which are beneficial to the Vis emission.

  16. Nitrogen aggregation in Ib type synthetic diamonds at low pressure and high-temperature annealing

    International Nuclear Information System (INIS)

    Kazyuchits, N.M.; Rusetskij, M.S.; Latushko, Ya.I.; Kazyuchits, V.N.; Zajtsev, A.M.

    2015-01-01

    A new technique for annealing of diamonds at low pressure and high temperature (LPHT) is considered. The absorption spectra of synthetic Ib diamonds are given before and after annealing. This is evident from a comparison of the spectra that nitrogen aggregation process takes place at the LPHT annealing diamond. (authors)

  17. Effects of annealing temperature on mechanical durability of indium-tin oxide film on polyethylene terephthalate substrate

    International Nuclear Information System (INIS)

    Machinaga, Hironobu; Ueda, Eri; Mizuike, Atsuko; Takeda, Yuuki; Shimokita, Keisuke; Miyazaki, Tsukasa

    2014-01-01

    Effects of the annealing temperature on mechanical durability of indium-tin oxide (ITO) thin films deposited on polyethylene terephthalate (PET) substrates were investigated. The ITO films were annealed at the range from 150 °C to 195 °C after the DC sputtering deposition for the production of polycrystalline ITO layers on the substrates. The onset strains of cracking in the annealed ITO films were evaluated by the uniaxial stretching tests with electrical resistance measurements during film stretching. The results indicate that the onset strain of cracking in the ITO film is clearly increased by increasing the annealing temperature. The in-situ measurements of the inter-planer spacing of the (222) plane in the crystalline ITO films during film stretching by using synchrotron radiation strongly suggest that the large compressive stress in the ITO film increases the onset strain of cracking in the film. X-ray stress analyses of the annealed ITO films and thermal mechanical analyses of the PET substrates also clarifies that the residual compressive stress in the ITO film is enhanced with increasing the annealing temperature due to the considerably larger shrinkage of the PET substrate. - Highlights: • Indium-tin oxide (ITO) films were deposited on polyethylene terephthalate (PET). • Mechanical durability of the ITO is improved by high temperature post-annealing. • The shrinkage in the PET increases with rising the post-annealing temperature. • The shrinkage of the PET enhances the compressive stress in the ITO film. • Large compressive stress in the ITO film may improve its mechanical durability

  18. Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Ngoepe, PNM, E-mail: phuti.ngoepe@up.ac.za; Meyer, WE; Diale, M; Auret, FD; Schalkwyk, L van

    2014-04-15

    In this study a comparison is made between the optical and electrical properties of Ni/Au and Ni/Ir/Au Schottky photodiodes based on Al{sub 0.35}Ga{sub 0.65}N. The effects of inserting Ir between Ni and Au are of particular interest. The comparison in the properties is done after annealing the photodiodes at different temperatures in an argon gas ambient. The reverse current decreased with annealing temperature up to 400 °C for the Ni/Au Schottky photodiode and up to 500 °C for the Ni/Ir/Au photodiode. The Schottky barrier heights increased with increasing annealing temperature. The responsivity of the Ni/Au photodiode was higher than that of the Ni/Ir/Au photodiode. The transmission of the Ni/Au metal layer improved with increasing annealing temperature up to 500 °C and the best transmission of the Ni/Ir/Au metal layer was after 400 °C annealing.

  19. Influence of annealing temperature on the Dy diffusion process in NdFeB magnets

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Sheng-qing, E-mail: joy_hsq@126.com [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Peng, Kun, E-mail: kpeng@hnu.edu.cn [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); College of Materials Science and Engineering, Hunan University, Changsha 410082 (China); Chen, Hong [State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China)

    2017-03-15

    Sintered NdFeB magnets were coated with a layer of Dy metal using electron beam evaporation method and then annealed at various temperatures to investigate the temperature dependence of Dy diffusion process in NdFeB magnets. A Dy-rich phase was observed along the grain boundaries after the grain boundary diffusion process, the diffusion coefficients of various temperatures were obtained, the diffusion coefficients of Dy along the grain boundaries at 800 °C and 900 °C were determined to be 9.8×10{sup −8} cm{sup 2} s{sup −1} and 2.4×10{sup −7} cm{sup 2} s{sup −1}, respectively. The diffusion length depended on the annealing temperature and the maximum diffusion length of approximately 1.8 mm and 3.0 mm can be obtained after annealing at 800 °C and 900 °C for 8 h. Higher diffusion temperature results in the diffusion not only along the grain boundaries but also into grains and then decrease in magnetic properties. The optimum annealing conditions can be determined as 900 °C for 8 h. The coercivity was improved from 1040 kA/m to 1450 kA/m and its magnetization has no significant reduction after the grain boundary diffusion process at the optimum annealing conditions. - Highlights: • The optimum annealing conditions can be determined as 900 °C for 8 h. • The diffusion coefficient of Dy at 900 °Care determined to be 2.4×10{sup −7} cm{sup 2} s{sup −1}. • A maximum diffusion length of about 3 mm can be obtained.

  20. Ultrafast Self-Assembly of Sub-10 nm Block Copolymer Nanostructures by Solvent-Free High-Temperature Laser Annealing.

    Science.gov (United States)

    Jiang, Jing; Jacobs, Alan G; Wenning, Brandon; Liedel, Clemens; Thompson, Michael O; Ober, Christopher K

    2017-09-20

    Laser spike annealing was applied to PS-b-PDMS diblock copolymers to induce short-time (millisecond time scale), high-temperature (300 to 700 °C) microphase segregation and directed self-assembly of sub-10 nm features. Conditions were identified that enabled uniform microphase separation in the time frame of tens of milliseconds. Microphase ordering improved with increased temperature and annealing time, whereas phase separation contrast was lost for very short annealing times at high temperature. PMMA brush underlayers aided ordering under otherwise identical laser annealing conditions. Good long-range order for sub-10 nm cylinder morphology was achieved using graphoepitaxy coupled with a 20 ms dwell laser spike anneal above 440 °C.

  1. Effects of substrate temperature and post-deposition anneal on properties of evaporated cadmium telluride films

    International Nuclear Information System (INIS)

    Bacaksiz, E.; Basol, B.M.; Altunbas, M.; Novruzov, V.; Yanmaz, E.; Nezir, S.

    2007-01-01

    The effects of substrate temperature and post-deposition heat treatment steps on the morphology, structural, optical and electrical properties of thin film CdTe layers grown by vacuum evaporation were investigated. Scanning electron microscopy and X-ray diffraction (XRD) techniques were employed to study the structural changes. It was observed that the grain sizes and morphologies of as-deposited layers were similar for substrate temperatures of - 173 deg. C and - 73 deg. C. However, CdTe films produced at a substrate temperature of 27 deg. C had substantially larger grain size and clearly facetted morphology. Annealing at 200-400 deg. C in air did not cause any appreciable grain growth in any of the films irrespective of their growth temperature. However, annealing at 400 deg. C reduced faceting in all cases and initiated fusing between grains. XRD studies showed that this behavior after annealing at 400 deg. C coincided with an onset of a degree of randomization in the originally strong (111) texture of the as-grown layers. Optical band gap measurements showed sharpening of the band-edge upon annealing at 400 deg. C and a band gap value in the range of 1.46-1.49 eV. Resistivity measurements indicated that annealing at 400 deg. C in air forms a highly resistive compensated CdTe film. All results point to 400 deg. C to be a critical annealing temperature at which optical, structural and electrical properties of CdTe layers start to change

  2. The influence of annealing temperature on the strength of TRISO coated particles

    Energy Technology Data Exchange (ETDEWEB)

    Rooyen, I.J. van, E-mail: Isabel.vanrooyen@pbmr.co.z [Pebble Bed Modular Reactor (Pty) Ltd., 1279 Mike Crawford Avenue, Centurion (South Africa); Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Neethling, J.H. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Rooyen, P.M. van [Pebble Bed Modular Reactor (Pty) Ltd., 1279 Mike Crawford Avenue, Centurion (South Africa)

    2010-07-31

    The integrity of the Pebble Bed Modular Reactor (PBMR) fuel, and specifically the SiC layer system of the Tristructural Isotropic (TRISO) coated particle (CP), namely inner pyrolytic carbon, silicon carbide and outer pyrolytic carbon (I-PyC-SiC-O-PyC), determines the containment of fission products. The PBMR fuel consists of TRISO coated particles (CPs) embedded in a graphite matrix. One of the characterization techniques investigated by PBMR is the determination of strength of CPs. It is a well known metallurgical fact that temperature, amongst many other parameters, may influence the strength of a material. A recently developed method for measuring the strength of the TRISO coated particles was used and is briefly described in this article. The advantages of this method are demonstrated by the comparison of strength measurements of five experimental PBMR CP batches as a function of annealing temperature. Significant modification of strength after annealing was measured with increased temperature within the range 1000-2100 {sup o}C. The interesting feature of decreasing standard deviation of the strength with increasing temperature will also be discussed with a possible explanation. A significant difference in coated particle strength is also demonstrated for two CP batches with layer thickness on the extremities of the SiC layer thickness specification. The effect of long duration annealing on these strength values will also be demonstrated by comparing results from 1 h to 100 h annealing periods of coated particles at a temperature of 1600 {sup o}C.

  3. Formation of Medium Carbon TRIP Steel Microstructure During Annealing in the Intercritical Temperature Range

    Directory of Open Access Journals (Sweden)

    Kokosza A.

    2014-10-01

    Full Text Available The paper presents the results of research conducted on austenite formation in the microstructure of 41MnSi6-5 TRIP steel during annealing in the intercritical temperature range. The influence of the annealing temperature on the volume fraction of retained austenite in the microstructure of the investigated steel after water quenching was also determined.

  4. Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

    Science.gov (United States)

    Kang, C. H.; Kondo, K.; Lagowski, J.; Gatos, H. C.

    1987-01-01

    Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

  5. Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

    Energy Technology Data Exchange (ETDEWEB)

    Abdullah, M. A. R., E-mail: ameerridhwan89@gmail.com; Mamat, M. H., E-mail: hafiz-030@yahoo.com; Ismail, A. S., E-mail: kyrin-samaxi@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Malek, M. F., E-mail: firz-solarzelle@yahoo.com [NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Alrokayan, Salman A. H., E-mail: dr.salman@alrokayan.com; Khan, Haseeb A., E-mail: khan-haseeb@yahoo.com [Chair of Targeting and Treatment of Cancer Using Nanoparticles, Deanship of Scientific Research, King Saud University (KSU), Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: rusop@salam.uitm.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

  6. Preparation of nickel oxide thin films at different annealing temperature by sol-gel spin coating method

    International Nuclear Information System (INIS)

    Abdullah, M. A. R.; Mamat, M. H.; Ismail, A. S.; Malek, M. F.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2016-01-01

    Preparation of NiO thin films at different annealing temperature by sol-gel method was conducted to synthesize the quality of the surface thin films. The effects of annealing temperature on the surface topology were systematically investigated. Our studies confirmed that the surface roughness of the thin films was increased whenever annealing temperature was increase. NiO thin films morphology structure analysis was confirmed by field emission scanning electron microscope. Surface roughness of the thin films was investigated by atomic force microscopy.

  7. CdO thin films based on the annealing temperature differences prepared by sol-gel method and their heterojunction devices

    Science.gov (United States)

    Soylu, M.; Yazici, T.

    2017-12-01

    Undoped CdO films were prepared on glass substrate and p-type silicon wafer using sol-gel spin coating method. The structural and optical properties of the films were investigated as a function of the annealing temperature. X-ray diffraction (XRD) patterns reveal that the films are formed from CdO with cubic crystal structure and (1 1 1) preferred orientation. It is seen that good crystallinity is due to the high annealing temperature. The surface morphology of the CdO films was found to be depending on the annealing temperature, showing cauliflower like structure. Optical band gaps for annealing temperature of 250 °C and 450 °C were found to be 2.49 eV and 2.27 eV, respectively, showing a decrease with raising temperature. Optics parameters such as extinction coefficient, refractive index, and surface-volume energy loss were determined with spectrophotometric analysis as a function of annealing temperature. CdO/p-Si heterojunction structure showed weak rectifying behavior. The diode parameters were found to be depending on annealing temperature. The results are encouraging to get better conjunction with CdO thin film component at optimize annealing temperature.

  8. Tailoring the magnetic properties and magnetorheological behavior of spinel nanocrystalline cobalt ferrite by varying annealing temperature.

    Science.gov (United States)

    Sedlacik, Michal; Pavlinek, Vladimir; Peer, Petra; Filip, Petr

    2014-05-14

    Magnetic nanoparticles of spinel nanocrystalline cobalt ferrite were synthesized via the sol-gel method and subsequent annealing. The influence of the annealing temperature on the structure, magnetic properties, and magnetorheological effect was investigated. The finite crystallite size of the particles, determined by X-ray diffraction and the particle size observed via transmission electron microscopy, increased with the annealing temperature. The magnetic properties observed via a vibrating sample magnetometer showed that an increase in the annealing temperature leads to the increase in the magnetization saturation and, in contrast, a decrease in the coercivity. The effect of annealing on the magnetic properties of ferrite particles has been explained by the recrystallization process at high temperatures. This resulted in grain size growth and a decrease in an imposed stress relating to defects in the crystal lattice structure of the nanoparticles. The magnetorheological characteristics of suspensions of ferrite particles in silicone oil were measured using a rotational rheometer equipped with a magnetic field generator in both steady shear and small-strain oscillatory regimes. The magnetorheological performance expressed as a relative increase in the magnetoviscosity appeared to be significantly higher for suspensions of particles annealed at 1000 °C.

  9. Effect of annealing temperature on the tribological behavior of ZnO films prepared by sol-gel method

    International Nuclear Information System (INIS)

    Lin Liyu; Kim, Dae-Eun

    2009-01-01

    The tribological behavior of zinc oxide (ZnO) films grown on glass and silicon (100) substrates by sol-gel method was investigated. Particularly, the as-coated films were post-annealed at different temperatures in air to investigate the effect of annealing temperature. Crystal structural and surface morphology of the films were measured by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). XRD patterns and AFM images indicated that the crystallinity and grain size of the films were enhanced and increased, respectively, with temperature. The tribological behavior of films was evaluated by sliding the ZnO films against a Si 3 N 4 ball under 0.5 gf normal load using a reciprocating pin-on-plate tribo-tester. The wear tracks of the films were measured by AFM to quantify the wear resistance of the films. The results showed that the wear resistance of the films could be improved by the annealing process. The wear resistance of the films generally increased with annealing temperature. Specifically, the wear resistance of the films was significantly improved when the annealing temperature was higher than 550 deg. C. The increase in the wear resistance is attributed to the increase in hardness and modulus of the film with annealing temperature

  10. Effect of annealing temperature and dopant concentration on the thermoluminescence sensitivity in LiF:Mg,Cu,Ag material.

    Science.gov (United States)

    Yahyaabadi, Akram; Torkzadeh, Falamarz; Rezaei Ochbelagh, Dariush; Hosseini Pooya, Seyed Mahdi

    2018-04-24

    LiF:Mg,Cu,Ag is a new dosimetry material that is similar to LiF:Mg,Cu,P in terms of dosimetric properties. The effect of the annealing temperature in the range of 200 to 350°C on the thermoluminescence (TL) sensitivity and the glow curve structure of this material at different concentrations of silver (Ag) was investigated. It has been demonstrated that the optimum values of the annealing temperature and the Ag concentration are 240°C and 0.1 mol% for better sensitivity, respectively. The TL intensity decreases at annealing temperatures lower than 240°C or higher than 240°C, reaching a minimum at 300°C and then again increases for various Ag concentrations. It was observed that the glow curve structure altered and the area under the low temperature peak as well as the area under the main dosimetric peak decreased with increasing annealing temperature. The position of the main dosimetric peak moved in the direction of higher temperatures, but at 320 and 350°C annealing temperatures, it shifted to lower temperatures. It was also observed that the TL sensitivity could partially be recovered by a combined annealing procedure. Copyright © 2018 John Wiley & Sons, Ltd.

  11. The effects of pre-dose and annealing temperature on some dosimetric properties of thermoluminescence of quartz

    International Nuclear Information System (INIS)

    Lin Zhikai

    1996-02-01

    The following aspects of dosimetric properties of quartz sample were studied. (1) The changes in dosimetric sensitivity of quartz with different pre-doses under different annealing temperature; (2) the option of optimal annealing temperature which can make the dosimetric sensitivity of quartz to restore its original level; (3) The changes in dosimetric sensitivity of quartz with different annealing time at 500 degree C for 8 h; (4) Repeated experiments were carried out in order to prove whether the sensitivity of quartz can restore its original level at annealing temperature 700 degree C for 3 h. It has been found that at 700 degree C for 3 h gave the least sensitivity change and the sensitivity of quartz almost restored its original level. Repeated experiments with four kinds of quartz sample confirmed this conclusion. The dramatic change of TL glow curve occurred only at the condition of annealing temperature 900 degree C for 1 h. This result was different from that obtained by D. J. Huntley et al. (1988). (3 refs., 4 figs., 1 tab.)

  12. Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors

    International Nuclear Information System (INIS)

    Jeong, S.-W.; Lee, H.J.; Kim, K.S.; You, M.T.; Roh, Y.; Noguchi, T.; Xianyu, W.; Jung, J.

    2006-01-01

    We have investigated the annealing effects of HfO 2 films deposited by an atomic layer deposition (ALD) method on the electrical and physical properties in the Si/SiO 2 /Pt/ALD-HfO 2 /Pd metal-insulator-metal (MIM) capacitors. If the annealing temperature for HfO 2 films was restricted below 500 deg. C, an annealing step using a rapid thermal processor (RTP) improves the electrical properties such as the dissipation factor and the dielectric constant. On the other hand, annealing at 700 deg. C degrades the electrical characteristics in general; the dissipation factor increases over the frequency range of 1∼4 MHz, and the leakage current increases up to 2 orders at the low electric field regions. We found that the degradation of electrical properties is due to the grain growth in the HfO 2 film (i.e., poly-crystallization of the film) by the high temperature annealing processing. We suggested that the annealing temperature must be restricted below 500 deg. C to obtain the high quality high-k film for the MIM capacitors

  13. Radiation intensification of the reactor pressure vessels recovery by low temperature heat treatment (wet annealing)

    Science.gov (United States)

    Krasikov, E.

    2015-04-01

    As a main barrier against radioactivity outlet reactor pressure vessel (RPV) is a key component in terms of NPP safety. Therefore present-day demands in RPV reliability enhance have to be met by all possible actions for RPV in-service embrittlement mitigation. Annealing treatment is known to be the effective measure to restore the RPV metal properties deteriorated by neutron irradiation. There are two approaches to annealing. The first one is so-called «dry» high temperature (∼475°C) annealing. It allows obtaining practically complete recovery, but requires the removal of the reactor core and internals. External heat source (furnace) is required to carry out RPV heat treatment. The alternative approach is to anneal RPV at a maximum coolant temperature which can be obtained using the reactor core or primary circuit pumps while operating within the RPV design limits. This low temperature «wet» annealing, although it cannot be expected to produce complete recovery, is more attractive from the practical point of view especially in cases when the removal of the internals is impossible.

  14. Radiation intensification of the reactor pressure vessels recovery by low temperature heat treatment (wet annealing)

    International Nuclear Information System (INIS)

    Krasikov, E

    2015-01-01

    As a main barrier against radioactivity outlet reactor pressure vessel (RPV) is a key component in terms of NPP safety. Therefore present-day demands in RPV reliability enhance have to be met by all possible actions for RPV in-service embrittlement mitigation. Annealing treatment is known to be the effective measure to restore the RPV metal properties deteriorated by neutron irradiation.There are two approaches to annealing. The first one is so-called «dry» high temperature (∼475°C) annealing. It allows obtaining practically complete recovery, but requires the removal of the reactor core and internals. External heat source (furnace) is required to carry out RPV heat treatment.The alternative approach is to anneal RPV at a maximum coolant temperature which can be obtained using the reactor core or primary circuit pumps while operating within the RPV design limits. This low temperature «wet» annealing, although it cannot be expected to produce complete recovery, is more attractive from the practical point of view especially in cases when the removal of the internals is impossible. (paper)

  15. Effect of annealing temperature on the stress and structural properties of Ge core fibre

    Science.gov (United States)

    Zhao, Ziwen; Cheng, Xueli; Xue, Fei; He, Ting; Wang, Tingyun

    2017-09-01

    Effect of annealing temperature on the stress and structural properties of a Ge core fibre via the molten core drawing (MCD) method is investigated using Raman spectroscopy, Scanning electronic microscopy (SEM), and X-ray diffraction. The experimental results showed that the Raman peak position of the Ge fibre shifted from 297.6 cm-1 to 300.5 cm-1, and the FWHM value decreased from 4.53 cm-1 to 4.31 cm-1, when the annealing is carried out at 700 °C, 800 °C, and 900 °C, respectively. For the Ge core annealed at 900 °C, an apparent crystal grain can be seen in the SEM image, and the diffraction peaks of the (3 3 1) plane are generated in the X-ray diffraction spectra. These results show that optimising the annealing temperature allows the release of the residual stress in the Ge core. When the Ge core fibre is annealed at 900 °C, it exhibits the lowest residual stress and the highest crystal quality, and the quality improvement relative to that of the sample annealed at 800 °C is significant. Hence, annealing at around 900 °C can greatly improve the quality of a Ge core fibre. Further performance improvement of the Ge core fibre by annealing techniques can be anticipated.

  16. Effects of annealing on the recombination dynamics of low-temperature grown ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Hilker, B.; Bekeny, C.; Voss, T.; Gutowski, J. [IFP, Universitaet Bremen, 28334 Bremen (Germany); Hauschild, R.; Kalt, H. [Universitaet Karlsruhe, 76128 Karlsruhe (Germany); Postels, B.; Bakin, Andrey; Waag, A. [IHT, TU Braunschweig, 38023 Braunschweig (Germany)

    2007-07-01

    We present systematic temperature and excitation density dependent time-resolved photoluminescence (TRPL) measurements of as-grown and annealed ZnO nanorods fabricated by an aqueous chemical growth (ACG) technique at {proportional_to}90 C. The as-grown nanorods show strong nearband-edge and rather weak deep-level emission indicating their already good optical quality. At 4K, we find a broad emission line at 3.36 eV (line width 30 meV) which we attribute to recombination from a donor band formed through the high donor concentration. After annealing in oxygen and nitrogen atmospheres at 600-800 C well-resolved and sharper excitonic transitions are observed. To understand the recombination dynamics in the nanorods we carried out TRPL measurements using a frequency-doubled femtosecond laser and a streak camera. The as-grown sample shows a very fast monoexponential decay time of {proportional_to}10ps independent of temperature and excitation density. In contrast, the annealed samples exhibit a biexponential decay. Each a fast {tau}1 and a slow {tau}2 time constant have been determined for all annealed samples both of them significantly varying depending on the annealing atmosphere and temperature. This will be discussed on the basis of a phenomenological rate-equation model.

  17. Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2

    International Nuclear Information System (INIS)

    Stavarache, Ionel; Lepadatu, Ana-Maria; Stoica, Toma; Ciurea, Magdalena Lidia

    2013-01-01

    Ge–SiO 2 films with high Ge/Si atomic ratio of about 1.86 were obtained by co-sputtering of Ge and SiO 2 targets and subsequently annealed at different temperatures between 600 and 1000 °C in a conventional furnace in order to show how the annealing process influences the film morphology concerning the Ge nanocrystal and/or amorphous nanoparticle formation and to study their electrical behaviour. Atomic force microscopy (AFM) imaging, Raman spectroscopy and electrical conductance measurements were performed in order to find out the annealing effect on the film surface morphology, as well as the Ge nanoparticle formation in correlation with the hopping conductivity of the films. AFM images show that the films annealed at 600 and 700 °C present a granular surface with particle height of about 15 nm, while those annealed at higher temperatures have smoother surface. The Raman investigations evidence Ge nanocrystals (including small ones) coexisting with amorphous Ge in the films annealed at 600 °C and show that almost all Ge is crystallized in the films annealed at 700 °C. The annealing at 800 °C disadvantages the Ge nanocrystal formation due to the strong Ge diffusion. This transition in Ge nanocrystals formation process by annealing temperature increase from 700 to 800 °C revealed by AFM and Raman spectroscopy measurements corresponds to a change in the electrical transport mechanism. Thus, in the 700 °C annealed films, the current depends on temperature according to a T −1/2 law which is typical for a tunnelling mechanism between neighbour Ge nanocrystals. In the 800 °C annealed films, the current–temperature characteristic has a T −1/4 dependence showing a hopping mechanism within an electronic band of localized states related to diffused Ge in SiO 2 .

  18. Effect of annealing temperatures on the morphology and structural properties of PVDF/MgO nanocomposites thin films

    Science.gov (United States)

    Rozana, M. D.; Arshad, A. N.; Wahid, M. H. M.; Habibah, Z.; Sarip, M. N.; Rusop, M.

    2018-05-01

    This study investigates the effect of annealing on the topography, morphology and crystal phases of poly(vinylideneflouride)/Magnesium Oxide (MgO) nanocomposites thin films via AFM, FESEM and ATR-FTIR. The nanocomposites thin films were annealed at temperatures ranging from 70°C to 170°C. The annealed PVDF/MgO nanocomposites thin films were then cooled at room temperature before removal from the oven. This is to restructure the crystal lattice and to reduce imperfection for the PVDF/MgO nanocomposites thin films. PVDF/MgO nanocomposites thin films with annealing temperatures of 70°C, 90°C and 110°C showed uniform distribution of MgO nanoparticles, relatively low average surface roughness and no visible of defects. High application of annealing temperature on PVDF/MgO nanocomposites thin films caused tear-like defects on the thin films surface as observed by FESEM. The PVDF/MgO nanocomposites thin films annealed at 70°C was found to be a favourable film to be utilized in this study due to its enhanced β-crystalites of PVDF as evident in ATR-FTIR spectra.

  19. Structural analysis of as-deposited and annealed low-temperature gallium arsenide

    Science.gov (United States)

    Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

    1993-04-01

    The structure of GaAs grown at low substrate temperatures (LT-GaAs) by molecular beam epitaxy has been studied using high resolution X-ray diffraction methods. Double crystal rocking curves from the as-deposited LT-GaAs show well defined interference fringes, indicating a high level of structural perfection. Triple crystal diffraction analysis of the as-deposited sample showed significantly less diffuse scattering near the LT-GaAs 004 reciprocal lattice point compared with the substrate 004 reciprocal lattice point, suggesting that despite the incorporation of approximately 1% excess arsenic, the epitaxial layer had superior crystalline perfection than did the GaAs substrate. Triple crystal scans of annealed LT-GaAs showed an increase in the integrated diffuse intensity by approximately a factor of three as the anneal temperature was increased from 700 to 900°C. Analogous to the effects of SiO2 precipitates in annealed Czochralski silicon, the diffuse intensity is attributed to distortions in the epitaxial LT-GaAs lattice by arsenic precipitates.

  20. Post-deposition annealing temperature dependence TiO_2-based EGFET pH sensor sensitivity

    International Nuclear Information System (INIS)

    Zulkefle, M. A.; Rahman, R. A.; Yusoff, K. A.; Abdullah, W. F. H.; Rusop, M.; Herman, S. H.

    2016-01-01

    EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO_2 sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO_2 deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO_2 thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.

  1. High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

    Science.gov (United States)

    Messenger, S. R.; Walters, R. J.; Summers, G. P.

    1993-01-01

    Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

  2. Doping β-Ga2O3 with europium: influence of the implantation and annealing temperature

    Science.gov (United States)

    Peres, M.; Lorenz, K.; Alves, E.; Nogales, E.; Méndez, B.; Biquard, X.; Daudin, B.; Víllora, E. G.; Shimamura, K.

    2017-08-01

    β-Ga2O3 bulk single crystals were doped by ion implantation at temperatures from room temperature to 1000 °C, using a 300 keV Europium beam with a fluence of 1  ×  1015 at cm-2. Rising the implantation temperature from room temperature to 400-600 °C resulted in a significant increase of the substitutional Eu fraction and of the number of Eu ions in the 3+  charge state as well as in a considerable decrease of implantation damage. Eu is found in both charge states 2+  and 3+  and their relative fractions are critically dependent on the implantation and annealing temperature, suggesting that defects play an important role in stabilizing one of the charge states. The damage recovery during post-implant annealing is a complex process and typically defect levels first increase for intermediate annealing temperatures and a significant recovery of the crystal only starts around 1000 °C. Cathodoluminescence spectra are dominated by the sharp Eu3+ related intra-ionic 4f transition lines in the red spectral region. They show a strong increase of the emission intensity with increasing annealing temperature, in particular for samples implanted at elevated temperature, indicating the optical activation of Eu3+ ions. However, no direct correlation of emission intensity and Eu3+ fraction was found, again pointing to the important role of defects on the physical properties of these luminescent materials.

  3. Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

    Directory of Open Access Journals (Sweden)

    Chong-Chong Dai

    2014-04-01

    Full Text Available A sandwich structure of Ni/V/4H-SiC was prepared and annealed at different temperatures from 650 °C to 1050 °C. The electrical properties and microstructures were characterized by transmission line method, X-ray diffraction, Raman spectroscopy and transmission electron microscopy. A low specific contact resistance of 3.3 × 10-5 Ω·cm2 was obtained when the Ni/V contact was annealed at 1050 °C for 2 min. It was found that the silicide changed from Ni3Si to Ni2Si with increasing annealing temperature, while the vanadium compounds appeared at 950 °C and their concentration increased at higher annealing temperature. A schematic diagram was proposed to explain the ohmic contact mechanism of Ni/V/4H-SiC structure.

  4. The effects of Mg incorporation and annealing temperature on the ...

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 88; Issue 2. The effects of Mg incorporation and annealing temperature on the physicochemical properties and antibacterial activity against {\\it Listeria monocytogenes} of ZnO nanoparticles. NIMA SHADAN ALI ABDOLAHZADEH ZIABARI RAFIEH MERAAT KAMYAR ...

  5. Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Shaneyfelt, M.R.; Riewe, L.C.; Flament, O.; Paillet, P.; Leray, J.L.

    1998-02-01

    Capacitance-voltage and thermally-stimulated-current techniques are used to estimate trapped hole and electron densities in MOS oxides as functions of irradiation and isochronal anneal temperature. Trapped-charge annealing and compensation effects are discussed

  6. Effect of Annealing Temperature on Gas Sensing Performance of SnO2 Thin Films Prepared by Spray Pyrolysis

    Directory of Open Access Journals (Sweden)

    G. E. PATIL

    2010-12-01

    Full Text Available The effect of variation of annealing temperature on the gas sensing characteristics of SnO2 thin films, which have been prepared by spray pyrolysis on alumina substrate at 350 oC, is investigated systematically for various gases at different operating temperature. The XRD, UV-visible spectroscopy and SEM techniques were employed to establish the structural, optical and morphological characteristics of the materials, resp. The X-ray diffraction results showed an increase in the crystallinity at higher annealing temperature. A high value of sensitivity is obtained for H2S gas at an optimum temperature of 100 oC is improved considerably. A SnO2 gas sensor annealed at 950 oC with sensitivity as high as 24 %, 4 times higher than that of sensor annealed at 550oC, are obtained for 80 ppm of H2S. The degree of crystallinity and grain size calculated from the XRD patterns has been found increasing with annealing temp

  7. Investigation of the annealing temperature effect on structural, morphology, dielectric and magnetic properties of BiFeO3 nanoparticles

    Science.gov (United States)

    Ranjbar, M.; Ghazi, M. E.; Izadifard, M.

    2018-06-01

    In this paper we have investigated the annealing temperature effect on the structure, morphology, dielectric and magnetic properties of sol-gel synthesized multiferroic BiFeO3 nanoparticles. X-ray diffraction spectroscopy revealed that all the samples have rhombohedrally distorted perovskite structure and the most pure BFO phase is obtained on the sample annealed at 800 °C. Field emission scanning electron microscopy (FESEM) revealed that increasing annealing temperature would increase the particle size. Decrease in dielectric constant was also observed by increasing annealing temperature. Vibrating sample method (VSM) analysis confirmed that samples annealed at 500-700 °C with particle size below the BFO's spiral spin structure length, have well saturated M-H curve and show ferromagnetic behavior.

  8. Strong white photoluminescence from annealed zeolites

    International Nuclear Information System (INIS)

    Bai, Zhenhua; Fujii, Minoru; Imakita, Kenji; Hayashi, Shinji

    2014-01-01

    The optical properties of zeolites annealed at various temperatures are investigated for the first time. The annealed zeolites exhibit strong white photoluminescence (PL) under ultraviolet light excitation. With increasing annealing temperature, the emission intensity of annealed zeolites first increases and then decreases. At the same time, the PL peak red-shifts from 495 nm to 530 nm, and then returns to 500 nm. The strongest emission appears when the annealing temperature is 500 °C. The quantum yield of the sample is measured to be ∼10%. The PL lifetime monotonously increases from 223 μs to 251 μs with increasing annealing temperature. The origin of white PL is ascribed to oxygen vacancies formed during the annealing process. -- Highlights: • The optical properties of zeolites annealed at various temperatures are investigated. • The annealed zeolites exhibit strong white photoluminescence. • The maximum PL enhancement reaches as large as 62 times. • The lifetime shows little dependence on annealing temperature. • The origin of white emission is ascribed to the oxygen vacancies

  9. Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

    Science.gov (United States)

    Vandersande, Jan W.; Wood, Charles; Draper, Susan

    1987-01-01

    Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

  10. The annealing of phosphorus-implanted silicon investigated at low temperatures

    International Nuclear Information System (INIS)

    Wagner, C.; Burkhardt, F.

    1978-01-01

    Phosphorus ions are implanted at 50 keV into misaligned silicon crystals at 20 and 300 0 C, respectively. The ion doses used are 8 x 10 13 and 8 x 10 14 cm -2 , respectively. After annealing treatments the electrical properties of the samples are investigated by measuring Hall effect and sheet resistivity in the range from 300 to 4.2 K. The experimental results indicate some problems which must be taken into account for interpreting Hall effect measurements made at room temperature only. Furthermore the results give some new information on the annealing process in phosphorus implanted silicon and the influence of the implantation parameters. (author)

  11. Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures

    Science.gov (United States)

    Wang, S.; Mirkhani, V.; Yapabandara, K.; Cheng, R.; Hernandez, G.; Khanal, M. P.; Sultan, M. S.; Uprety, S.; Shen, L.; Zou, S.; Xu, P.; Ellis, C. D.; Sellers, J. A.; Hamilton, M. C.; Niu, G.; Sk, M. H.; Park, M.

    2018-04-01

    We report on the fabrication and electrical characterization of bottom gate thin-film transistors (TFTs) based on a sol-gel derived ZnO channel layer. The effect of annealing of ZnO active channel layers on the electrical characteristics of the ZnO TFTs was systematically investigated. Photoluminescence (PL) spectra indicate that the crystal quality of the ZnO improves with increasing annealing temperature. Both the device turn-on voltage (Von) and threshold voltage (VT) shift to a positive voltage with increasing annealing temperature. As the annealing temperature is increased, both the subthreshold slope and the interfacial defect density (Dit) decrease. The field effect mobility (μFET) increases with annealing temperature, peaking at 800 °C and decreases upon further temperature increase. An improvement in transfer and output characteristics was observed with increasing annealing temperature. However, when the annealing temperature reaches 900 °C, the TFTs demonstrate a large degradation in both transfer and output characteristics, which is possibly produced by non-continuous coverage of the film. By using the temperature-dependent field effect measurements, the localized sub-gap density of states (DOSs) for ZnO TFTs with different annealing temperatures were determined. The DOSs for the subthreshold regime decrease with increasing annealing temperature from 600 °C to 800 °C and no substantial change was observed with further temperature increase to 900 °C.

  12. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Vienna 1040 (Austria); Nicolay, P. [CTR Carinthian Tech Research AG, Villach 9524 (Austria)

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  13. High temperature annealing of fission tracks in fluorapatite, Santa Fe Springs oil field, Los Angeles Basin, California

    Science.gov (United States)

    Naeser, Nancy D.; Crowley, Kevin D.; McCulloh, Thane H.; Reaves, Chris M.; ,

    1990-01-01

    Annealing of fission tracks is a kinetic process dependent primarily on temperature and to a laser extent on time. Several kinetic models of apatite annealing have been proposed. The predictive capabilities of these models for long-term geologic annealing have been limited to qualitative or semiquantitative at best, because of uncertainties associated with (1) the extrapolation of laboratory observations to geologic conditions, (2) the thermal histories of field samples, and (3) to some extent, the effect of apatite composition on reported annealing temperatures. Thermal history in the Santa Fe Springs oil field, Los Angeles Basin, California, is constrained by an exceptionally well known burial history and present-day temperature gradient. Sediment burial histories are continuous and tightly constrained from about 9 Ma to present, with an important tie at 3.4 Ma. No surface erosion and virtually no uplift were recorded during or since deposition of these sediments, so the burial history is simple and uniquely defined. Temperature gradient (???40??C km-1) is well established from oil-field operations. Fission-track data from the Santa Fe Springs area should thus provide one critical field test of kinetic annealing models for apatite. Fission-track analysis has been performed on apatites from sandstones of Pliocene to Miocene age from a deep drill hole at Santa Fe Springs. Apatite composition, determined by electron microprobe, is fluorapatite [average composition (F1.78Cl0.01OH0.21)] with very low chlorine content [less than Durango apatite; sample means range from 0.0 to 0.04 Cl atoms, calculated on the basis of 26(O, F, Cl, OH)], suggesting that the apatite is not unusually resistant to annealing. Fission tracks are preserved in these apatites at exceptionally high present-day temperatures. Track loss is not complete until temperatures reach the extreme of 167-178??C (at 3795-4090 m depth). The temperature-time annealing relationships indicated by the new data

  14. Studies on phase transformation and molecular orientation in nanostructured zinc phthalocyanine thin films annealed at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Avijit; Biswas, Bipul; Majumder, Manisree; Sanyal, Manik Kumar; Mallik, Biswanath, E-mail: spbm@iacs.res.in

    2012-08-31

    Studies on the electronic and optical properties of thin films of organometallic compounds such as phthalocyanine are very important for the development of devices based on these compounds. The nucleation and grain growth mechanism play an important role for the final electronic as well as optoelectronic properties of the organic and organometallic thin films. The present article deals with the change in the film morphology, grain orientation of nanocrystallites and optical properties of zinc phthalocyanines (ZnPc) thin films as a function of the post deposition annealing temperature. The effect of annealing temperature on the optical and structural property of vacuum evaporated ZnPc thin films deposited at room temperature (30 Degree-Sign C) on quartz glass and Si(100) substrates has been investigated. The thin films have been characterized by the UV-vis optical absorption spectra, X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM) and Fourier transform infrared spectroscopy. From the studies of UV-vis absorption spectra and XRD data, a metastable {alpha} to {beta}-phase transformation has been observed when the thin films were annealed at a temperature greater than about 250 Degree-Sign C. The FESEM images have shown the particlelike structure at room temperature and the structure became rodlike when the films were annealed at high temperatures. TEM image of ZnPc film dissolved in ethanol has shown spectacular rod-shaped crystallites. High resolution transmission electron microscopy image of a single nanorod has shown beautiful 'honey-comb' like structure. Particle size and root mean square roughness were calculated from AFM images. The changes in band gap energy with increase in annealing temperature have been evaluated. - Highlights: Black-Right-Pointing-Pointer Morphology and orientation of grains in zinc phthalocyanine (ZnPc) thin films. Black

  15. Post-deposition annealing temperature dependence TiO{sub 2}-based EGFET pH sensor sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Zulkefle, M. A., E-mail: alhadizulkefle@gmail.com; Rahman, R. A., E-mail: rohanieza.abdrahman@gmail.com; Yusoff, K. A., E-mail: khairul.aimi.yusof@gmail.com [NANO-ElecTronic Centre (NET), Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Abdullah, W. F. H., E-mail: wanfaz@salam.uitm.edu.my [Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Rusop, M., E-mail: rusop@salam.uitm.edu.my [NANO-Science Technology (NST), Institute of Science (IOS), Faculty of Applied Sciences, Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Herman, S. H., E-mail: hana1617@salam.uitm.edu.my [Core of Frontier Materials & Industry Applications, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    EGFET pH sensor is one type of pH sensor that is used to measure and determine pH of a solution. The sensing membrane of EGFET pH sensor plays vital role in the overall performance of the sensor. This paper studies the effects of different annealing temperature of the TiO{sub 2} sensing membranes towards sensitivity of EGFET pH sensor. Sol-gel spin coating was chosen as TiO{sub 2} deposition techniques since it is cost-effective and produces thin film with uniform thickness. Deposited TiO{sub 2} thin films were then annealed at different annealing temperatures and then were connected to the gate of MOSFET as a part of the EGFET pH sensor structure. The thin films now act as sensing membranes of the EGFET pH sensor and sensitivity of each sensing membrane towards pH was measured. From the results it was determined that sensing membrane annealed at 300 °C gave the highest sensitivity followed by sample annealed at 400 °C and 500 °C.

  16. Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Hyunpil Boo

    2012-01-01

    Full Text Available P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050∘C for 30∼90 min for activation. Boron emitters were activated at 1000∘C or higher, while phosphorus emitters were activated at 950∘C. QSSPC measurements show that the implied Voc of boron emitters increases about 15 mV and the J01 decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the implied Voc decreases from 622 mV to 560 mV and the J01 increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178 μs to 14 μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δηabs=−1.3%, while, for n-type implanted solar cells, deep junction annealing increases the efficiency and Voc, especially (Δηabs=+0.4% for backside emitter solar cells.

  17. Impact of Annealing Temperature on the Physical Properties of the Lanthanum Deficiency Manganites

    Directory of Open Access Journals (Sweden)

    Skini Ridha

    2017-10-01

    Full Text Available The lanthanum deficiency manganites La0.8-x□xCa0.2MnO3 (x = 0, 0.1 and 0.2, where □ is a lanthanum vacancy, were prepared using the classic ceramic methods with different thermal treatments (1373 K and 973 K. The structural, magnetic, and magnetocaloric properties of these compounds were studied as a function of annealing temperature. It was noted that the annealing temperature did not affect the crystal structure of our samples (orthorhombic structure with Pnma space group. Nevertheless, a change in the variation of the unit cell volume V, the average bond length dMn–O, and the average bond angles θMn–O–Mn were observed. Magnetization versus temperature study has shown that all samples exhibited a magnetic transition from ferromagnetic (FM to paramagnetic (PM phase with increasing temperature. However, it can be clearly seen that the annealing at 973 K induced an increase of the magnetization. In addition, the magnetocaloric effect (MCE as well as the relative cooling power (RCP were estimated. As an important result, the values of MCE and RCP in our Lanthanum-deficiency manganites are reported to be near to those found in gadolinium, considered as magnetocaloric reference material.

  18. Effect of oxidation and annealing temperature on optical and ...

    Indian Academy of Sciences (India)

    Administrator

    Tin oxide thin films were deposited on glass substrate with 100 nm thickness of Sn, which was coated by magnetron sputtering followed by thermal oxidation at different temperatures. ... Annealing of the samples at 500–650 °C caused the transmittance and optical ..... (αhν)1/2 and (αhν)1/3 to determine the Eg. (b) They used.

  19. Temperature dependence of radiation colloidal centers production and annealing in alkali halide crystals

    International Nuclear Information System (INIS)

    Kristapson, J.Z.; Ozerskii, V.J.

    1981-01-01

    The investigation results on temperature dependences of production and annealing of radiation colloidal color centers have been reviewed. In order to produce such centers in NaCl, KCl and KBr crystals the doses of 10 2 -10 4 Mrad as well as irradiation temperatures of 300-600 K and post-irradiation heating of up to 800 K were applied. It has been demonstrated that to produce X-centers, it is necessary to have optimal temperature and initial critical dose during both irradiation and post-irradiation heating of crystals. It has been also found that during annealing hole centers produced are different with regard to thermal stability. The possible recombination mechanisms of hole and electron products of radiolysis during post-irradiation heating has been analyzed [ru

  20. 454-Pyrosequencing Analysis of Bacterial Communities from Autotrophic Nitrogen Removal Bioreactors Utilizing Universal Primers: Effect of Annealing Temperature.

    Science.gov (United States)

    Gonzalez-Martinez, Alejandro; Rodriguez-Sanchez, Alejandro; Rodelas, Belén; Abbas, Ben A; Martinez-Toledo, Maria Victoria; van Loosdrecht, Mark C M; Osorio, F; Gonzalez-Lopez, Jesus

    2015-01-01

    Identification of anaerobic ammonium oxidizing (anammox) bacteria by molecular tools aimed at the evaluation of bacterial diversity in autotrophic nitrogen removal systems is limited by the difficulty to design universal primers for the Bacteria domain able to amplify the anammox 16S rRNA genes. A metagenomic analysis (pyrosequencing) of total bacterial diversity including anammox population in five autotrophic nitrogen removal technologies, two bench-scale models (MBR and Low Temperature CANON) and three full-scale bioreactors (anammox, CANON, and DEMON), was successfully carried out by optimization of primer selection and PCR conditions (annealing temperature). The universal primer 530F was identified as the best candidate for total bacteria and anammox bacteria diversity coverage. Salt-adjusted optimum annealing temperature of primer 530F was calculated (47°C) and hence a range of annealing temperatures of 44-49°C was tested. Pyrosequencing data showed that annealing temperature of 45°C yielded the best results in terms of species richness and diversity for all bioreactors analyzed.

  1. Reduction in L10 phase transition temperature of PLD grown FePt thin by pre-annealing pulse laser exposure

    International Nuclear Information System (INIS)

    Wang, Y.; Rawat, R.S.; Bisht, A.

    2013-01-01

    A pre-annealing atmospheric pulsed laser exposure was applied to decrease the phase transition (from chemically disordered A1 phase to chemically ordered L1 0 phase) temperature of FePt nano-particles on a Si (100) substrate. Different pre-annealing laser energy densities of 0.024 and 0.079 J/cm2 were utilized to expose the pulsed laser deposition (PLD) FePt thin film samples under atmospheric conditions. Subsequently, FePt thin film samples were annealed at different temperatures of 300 and 400 ºC to observe the influence of laser exposure on the phase transition temperature. The phase transition temperature was decreased from conventional 600 ºC to 400 ºC by one shot pre-annealing atmospheric pulsed laser exposure. (author)

  2. Role of Annealing Temperature on Morphology of Alumina Thin Film Prepared by Wet-Chemical Method

    Directory of Open Access Journals (Sweden)

    Manju Pandey

    2015-03-01

    Full Text Available In this paper, we reported the compositional, morphological and structural properties of the alumina(Al2O3 thin films prepared by sol-gel technique and annealed between 800 0C to 1200 0C for 1-hour in an air atmosphere. The deposited films were polycrystalline in nature. Thin films were found uniform and adherent to the alumina substrate. Effect of annealing temperature on structural parameters such as pore size and surface area were calculated. The result indicates that pore size and surface area was decreased by increasing annealing temperature. The material characterization was done by field emission scanning electron microscope (SEM, atomic force microscopy (AFM and Brunaur, Emmet and Teller (BET.

  3. Texture development in Al-Mg alloys during high temperature annealing

    International Nuclear Information System (INIS)

    Saitou, T.; Inagaki, H.

    2001-01-01

    To clarify the effect of Mg content on annealing textures developed in Al-Mg alloys during high temperature annealing, Al-Mg alloys containing up to 9 wt.% Mg in supersaturated solid solution were cold rolled 95% and isothermally annealed at 450 C. Their textures were investigated with the orientation distribution function analysis. It was found that, in the recrystallization textures observed at complete recrystallization, addition of more than 1 wt.% Mg was sufficient to suppress the development of {100} left angle 001 right angle. With increasing Mg content, {100} left angle 001 right angle decreased remarkably, whereas {100} left angle 013 right angle and {103} left angle 321 right angle increased. Thus, {100} left angle 013 right angle and {103} left angle 321 right angle were found to be the main orientations of the recrystallization textures of Al-Mg alloys annealed at high temperatures. {100} left angle 013 right angle developed most remarkably at 4 wt.% Mg, while {103} left angle 321 right angle showed the maximum development at 7 wt.% Mg. During subsequent grain growth at 450 C, remarkable texture changes were observed only in the alloys containing Mg in the range between 2 and 4 wt.%. In these alloys, {100} left angle 013 right angle developed at the expense of {100} left angle 001 right angle at earlier stages of grain growth, whereas {103} left angle 321 right angle increased independently of these two orientations at later stages of grain growth. Reflecting these texture changes, grain growth occurred in these alloys discontinuously. Such a discontinuous grain growth with large texture changes is expected, if strong textures are already present before grain growth, and if recrystallized grains having similar orientations are distributed by forming large clusters before grain growth. (orig.)

  4. Effect of annealing temperature on electrical properties of poly (methyl methacrylate): titanium dioxide nanocomposite films using spin coating deposition technique

    International Nuclear Information System (INIS)

    Ismail, L N; Habibah, Z; Herman, S H; Rusop, M

    2014-01-01

    Nanocomposite poly (methyl methacrylate) :titanium dioxide (PMMA :TiO 2 ) film were deposited on glass substrate. The effect of annealing temperature, especially on electrical, dielectric and the morphological properties of the thin films were investigated by current-voltage (I-V) measurement, impedance spectroscopy, and FESEM. The annealing temperature is varies from 120°C, 140°C, 160°C, 180°C and 200°C. The electrical properties results showing when nanocomposite film annealed at '20°C produce the lowest current. Meanwhile, when the annealing temperature increased, the current increased drastically and this indicates the PMMA:TiO 2 nanocomposite film are no longer having insulating properties. The dielectric properties also indicate that film annealed at 120°C has the best dielectric properties compared to other temperature. The FESEM results show that as the temperature increased, the PMMA:TiO 2 nanocomposite film started to create a phase separation between the PMMA matrix and TiO 2 nanoparticles

  5. Sensitization of erbium in silicon-rich silica : the effect of annealing temperature and hydrogen passivation

    International Nuclear Information System (INIS)

    Wilkinson, A.R.; Forcales, M.; Elliman, R.G.

    2005-01-01

    This paper reports on the effect of annealing temperature and hydrogen passivation on the excitation cross-section and photoluminescence of erbium in silicon-rich silica. Samples were prepared by co-implantation of Si and Er into SiO 2 followed by a single thermal anneal at temperatures ranging from 800 to 1100 degrees C, and with or without hydrogen passivation performed at 500 degrees C. Using time-resolved photoluminescence, the effective erbium excitation cross-section is shown to increase by a factor 3, while the number of optically active erbium ions decreases by a factor of 4 with increasing annealing temperature. Hydrogen passivation is shown to increase the luminescence intensity and to shorten the luminescence lifetime at 1.54 μm only in the presence of Si nanocrystals. The implications fo these results for realizing a silicon-based optical amplifier are also discussed. (author). 19 refs., 3 figs

  6. Temperature annealing of tracks induced by ion irradiation of graphite

    International Nuclear Information System (INIS)

    Liu, J.; Yao, H.J.; Sun, Y.M.; Duan, J.L.; Hou, M.D.; Mo, D.; Wang, Z.G.; Jin, Y.F.; Abe, H.; Li, Z.C.; Sekimura, N.

    2006-01-01

    Highly oriented pyrolytic graphite (HOPG) samples were irradiated by Xe ions of initial kinetic energy of 3 MeV/u. The irradiations were performed at temperatures of 500 and 800 K. Scanning tunneling microscopy (STM) images show that the tracks occasionally have elongated structures under high-temperature irradiation. The track creation yield at 800 K is by three orders of magnitude smaller compared to that obtained during room-temperature irradiation. STM and Raman spectra show that amorphization occurs in graphite samples irradiated at 500 K to higher fluences, but not at 800 K. The obtained experimental results clearly reveal that the irradiation under high temperature causes track annealing

  7. Structural and electrical properties of room temperature pulsed laser deposited and post-annealed thin SrRuO3 films

    International Nuclear Information System (INIS)

    Gautreau, O.; Harnagea, C.; Normandin, F.; Veres, T.; Pignolet, A.

    2007-01-01

    Good quality strontium ruthenate (SrRuO 3 ) thin continuous films (15 to 125 nm thick) have been synthesized on silicon (100) substrates by room temperature pulsed laser deposition under vacuum followed by a post-deposition annealing, a route unexplored and yet not reported for SrRuO 3 film growth. The presence of an interfacial Sr 2 SiO 4 layer has been identified for films annealed at high temperature, and the properties of this interface layer as well as the properties of the SrRuO 3 film have been analyzed and characterized as a function of the annealing temperature. The room temperature resistivity of the SrRuO 3 films deposited by laser ablation at room temperature and post-annealed is 2000 μΩ.cm. A critical thickness of 120 nm has been determined above which the influence of the interface layer on the resistivity becomes negligible

  8. Influence of annealing temperature on structural and magnetic properties of MnFe2O4 nanoparticles

    Directory of Open Access Journals (Sweden)

    Surowiec Zbigniew

    2015-03-01

    Full Text Available Nanoparticles of manganese ferrite were obtained by the impregnation of highly ordered mesoporous MCM-41 silica support. The investigated sample contained 20% wt. Fe. The obtained nanocrystallites were strongly dispersed in silica matrix and their size was about 2 nm. The sample annealing at 500°C led to increase of particle size to about 5 nm. The Mössbauer spectroscopy investigations performed at room temperature show on occurrence of MnFe2O4 nanoparticle in superparamagnetic state for the sample annealed in all temperatures. The coexistence of superparamagnetic and ferromagnetic phase was observed at liquid nitrogen temperature. The sample annealed at 400°C and 500°C has bigger manganese ferrite particle and better crystallized structure. One can assign them the discrete hyperfine magnetic field components.

  9. Coalescence aspects of cobalt nanoparticles during in situ high-temperature annealing

    NARCIS (Netherlands)

    Palasantzas, G; Vystavel, T; Koch, SA; De Hosson, JTM

    2006-01-01

    In this work we investigate the coalescence aspects of Co nanoparticles. It was observed that nanoparticles in contact with the substrate are relatively immobile, whereas those on top of other Co particles can rearrange themselves during high-temperature annealing and further coalesce. Indeed,

  10. Temperature behavior and annealing of insulated gate transistors subjected to localized lifetime control by proton implantation

    International Nuclear Information System (INIS)

    Mogro-Campero, A.; Love, R.P.; Chang, M.F.; Dyer, R.F.

    1987-01-01

    Localized lifetime control by proton implantation can result in a considerable improvement (as much as an order of magnitude or more) in the trade-off between device turn-off time and forward voltage when compared with the unlocalized method of electron irradiation. The physical mechanisms responsible for the qualitative temperature dependences are identified: MOS channel resistance for forward voltage, carrier capture cross-section for turn-off time, and generation and diffusion components of leakage current. Since no catastrophic or unrecoverable behavior is observed, normal device operation within the tested temperature range is possible. Isothermal annealing curves of turn-off time measured after annealing, and corresponding to a few hours annealing time, reveal that a constant turn-off time is reached after about an hour. The constant value increases with temperature, but is still below the unimplanted value after 4 h at 525 0 C. The turn-off time was verified to be constant even after 24 h of annealing at 200 0 C. Lifetime control by proton implantation seems to be more thermally stable than that caused by electron irradiation. (author)

  11. Effect of stress relief annealing temperature and atmosphere on the magnetic properties of silicon steel

    International Nuclear Information System (INIS)

    Paolinelli, Sebastiao C.; Cunha, Marco A. da

    2006-01-01

    Fully processed non-oriented silicon steel samples 0.50 mm thick were sheared and submitted to stress relief annealing under different conditions of temperature and atmosphere to investigate the effect of this treatment on the recovery of magnetic properties. Two different compositions were used, with different Si and Al contents. Temperature was varied in the range of 600-900 deg. C and four atmospheres were used: N 2 and N 2 +10%H 2 combined with dew points of -10 and 15 deg. C. The results showed that annealing atmosphere has very important effect on the magnetic properties and that the beneficial effect of stress relief annealing can be overcome by the detrimental effect of the atmosphere under certain conditions, due to oxidation and nitration

  12. Optoelectronic study and annealing stability of room temperature pulsed laser ablated ZnSe polycrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Taj Muhammad, E-mail: tajakashne@gmail.com; Zakria, M.; Ahmad, Mushtaq; Shakoor, Rana I.

    2014-03-15

    In principal, we described stability of the room temperature ZnSe thin films with thermal annealing deposited onto glass by pulsed laser deposition technique using third harmonic 355 nm of Nd: YAG laser beam. Optoelectronic analysis and stability with thermal annealing was described in terms of structural and optical properties. These properties were investigated via X-ray diffraction, atomic force microscope, scanning electron microscope, Raman, Fourier transform infrared and photoluminescence spectroscopies. From the strong reflection corresponding to the (1 1 1) plane (2θ=27.48°) and the longitudinal optical “LO” phonon modes at 250 cm{sup −1} and 500 cm{sup −1} in the X-ray diffraction and Raman spectra, a polycrystalline zincblende structure of the film was established. At 300 and 350 °C annealing temperatures, the film crystallites were preferentially oriented with the (1 1 1) plane parallel to the substrate and became amorphous at 400 °C. Atomic force microscopic images showed that the morphologies of ZnSe films became smooth with root mean squared roughness 9.86 nm after annealing at 300 and 350 °C while a rougher surface was observed for the amorphous film at 400 °C. Fourier transform infrared study illustrated the chemical nature and Zn–Se bonding in the deposited films. For the as-deposited and annealed samples at 300 and 350 °C, scanning electron micrographs revealed mono-dispersed indistinguishable ZnSe grains and smooth morphological structure which changed to a cracking and bumpy surface after annealing at 400 °C. The physical phenomenon of annealing induced morphological changes could be explained in terms of “structure zone model”. Excitonic emission at 456 nm was observed for both as-deposited and annealed film at 350 °C. The transmission spectrum shows oscillatory behavior because of the thin film interference and exhibited a high degree of transparency down to a wavelength ∼500 nm in the IR region. Energy band-gap was

  13. 454-Pyrosequencing Analysis of Bacterial Communities from Autotrophic Nitrogen Removal Bioreactors Utilizing Universal Primers: Effect of Annealing Temperature

    Directory of Open Access Journals (Sweden)

    Alejandro Gonzalez-Martinez

    2015-01-01

    Full Text Available Identification of anaerobic ammonium oxidizing (anammox bacteria by molecular tools aimed at the evaluation of bacterial diversity in autotrophic nitrogen removal systems is limited by the difficulty to design universal primers for the Bacteria domain able to amplify the anammox 16S rRNA genes. A metagenomic analysis (pyrosequencing of total bacterial diversity including anammox population in five autotrophic nitrogen removal technologies, two bench-scale models (MBR and Low Temperature CANON and three full-scale bioreactors (anammox, CANON, and DEMON, was successfully carried out by optimization of primer selection and PCR conditions (annealing temperature. The universal primer 530F was identified as the best candidate for total bacteria and anammox bacteria diversity coverage. Salt-adjusted optimum annealing temperature of primer 530F was calculated (47°C and hence a range of annealing temperatures of 44–49°C was tested. Pyrosequencing data showed that annealing temperature of 45°C yielded the best results in terms of species richness and diversity for all bioreactors analyzed.

  14. Luminescence characteristics of nanoporous anodic alumina annealed at different temperatures

    Science.gov (United States)

    Ilin, D. O.; Vokhmintsev, A. S.; Weinstein, I. A.

    2016-09-01

    Anodic aluminum oxide (AAO) membranes with 100 µm thickness were synthesized in oxalic acid solution under constant current density. Grown samples were annealed in 500-1250 °C range for 5 h in air. Average pore diameter was evaluated using quantitative analysis of SEM images and appeared to be within 78-86 nm diapason. It was found there was a broad emission band in the 350-620 nm region of photoluminescence (PL) spectra in amorphous membranes which is attributed to F-type oxygen deficient centers or oxalic ions. It was shown that intensive red emission caused by Cr3+ (696 nm) and Mn4+ (680 nm) impurities dominates in PL of AAO samples with crystalline α- and δ-phases after annealing at 1100-1250 °C temperatures.

  15. Influences of annealing temperature on sprayed CuFeO2 thin films

    Science.gov (United States)

    Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

    2018-06-01

    Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

  16. Isothermal and isochronal annealing methodology to study post-irradiation temperature activated phenomena

    International Nuclear Information System (INIS)

    Chabrerie, C.; Autran, J.L.; Paillet, P.; Flament, O.; Leray, J.L.; Boudenot, J.C.

    1997-01-01

    In this work, the evolution of the oxide trapped charge has been modeled, to predict post-irradiation behavior for arbitrary anneal conditions (i.e., arbitrary temperature-time profiles). Using experimental data obtained from a single isochronal anneal, the method consists of calculating the evolution of the energy distribution of the oxide trapped charge, in the framework of a thermally activated charge detrapping model. This methodology is illustrated in this paper by the prediction of experimental isothermal data from isochronal measurements. The implications of these results to hardness assurance test methods are discussed

  17. Effects of Annealing Temperature on Properties of Ti-Ga-Doped ZnO Films Deposited on Flexible Substrates.

    Science.gov (United States)

    Chen, Tao-Hsing; Chen, Ting-You

    2015-11-03

    An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga-doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.

  18. Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

    International Nuclear Information System (INIS)

    Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook

    2017-01-01

    Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

  19. Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Gedi, Sreedevi; Reddy, Vasudeva Reddy Minnam; Kang, Jeong-yoon; Jeon, Chan-Wook, E-mail: cwjeon@ynu.ac.kr

    2017-04-30

    Highlights: • Preparation SnS films using electron beam evaporation at room temperature. • SnS films were annealed at a high temperaure for different short period of times. • The films showed highly oriented (111) planes with orthorhombic crystal structure. • Surface morphology showed bigger and faceted grains embedded in orthorombic. • The TEM confirmed that big orthorombic slabs had single-crystalline nature. - Abstract: Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity.

  20. Influence of surfactant and annealing temperature on optical properties of sol-gel derived nano-crystalline TiO2 thin films.

    Science.gov (United States)

    Vishwas, M; Sharma, Sudhir Kumar; Rao, K Narasimha; Mohan, S; Gowda, K V Arjuna; Chakradhar, R P S

    2010-03-01

    Titanium dioxide thin films have been synthesized by sol-gel spin coating technique on glass and silicon substrates with and without surfactant polyethylene glycol (PEG). XRD and SEM results confirm the presence of nano-crystalline (anatase) phase at an annealing temperature of 300 degrees C. The influence of surfactant and annealing temperature on optical properties of TiO(2) thin films has been studied. Optical constants and film thickness were estimated by Swanepoel's (envelope) method and by ellipsometric measurements in the visible spectral range. The optical transmittance and reflectance were found to decrease with an increase in PEG percentage. Refractive index of the films decreased and film thickness increased with the increase in percentage of surfactant. The refractive index of the un-doped TiO(2) films was estimated at different annealing temperatures and it has increased with the increasing annealing temperature. The optical band gap of pure TiO(2) films was estimated by Tauc's method at different annealing temperature. Copyright 2010 Elsevier B.V. All rights reserved.

  1. [Effects of annealing temperature on the structure and optical properties of ZnMgO films prepared by atom layer deposition].

    Science.gov (United States)

    Sun, Dong-Xiao; Li, Jin-Hua; Fang, Xuan; Chen, Xin-Ying; Fang, Fang; Chu, Xue-Ying; Wei, Zhi-Peng; Wang, Xiao-Hua

    2014-07-01

    In the present paper, we report the research on the effects of annealing temperature on the crystal quality and optical properties of ZnMgO films deposited by atom layer deposition(ALD). ZnMgO films were prepared on quartz substrates by ALD and then some of the samples were treated in air ambient at different annealing temperature. The effects of annealing temperature on the crystal quality and optical properties of ZnMgO films were characterized by X-ray diffraction (XRD), photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption spectra. The XRD results showed that the crystal quality of ZnMgO films was significantly improved when the annealing temperature was 600 degrees C, meanwhile the intensity of(100) diffraction peak was the strongest. Combination of PL and UV-Vis absorption measurements showed that it can strongly promote the Mg content increasing in ZnMgO films and increase the band gap of films. So the results illustrate that suitable annealing temperature can effectively improve the crystal quality and optical properties of ZnMgO films.

  2. Annealing temperature effect on the properties of mercury-doped TiO2 films prepared by sol-gel dip-coating technique

    International Nuclear Information System (INIS)

    Mechiakh, R.; Ben Sedrine, N.; Karyaoui, M.; Chtourou, R.

    2011-01-01

    This work presents the annealing temperature effect on the properties of mercury (Hg)-doped titanium dioxide (TiO 2 ). Thin films and polycrystalline powders have been prepared by sol-gel process. The structure, surface morphology and optical properties, as a function of the annealing temperature, have been studied by atomic force microscopy (AFM), Raman, reflectance and ellipsometric spectroscopies. In order to determine the transformation points, we have analyzed the xerogel-obtained powder by differential scanning calorimetry (DSC). Raman spectroscopy shows the crystalline anatase and rutile phases for the films annealed at 400 deg. C and 1000 deg. C respectively. The AFM surface morphology results indicate that the particle size increases from 14 to 57 nm by increasing the annealing temperature. The complex index and the optical band gap (E g ) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreases by increasing the annealing temperature.

  3. Effect of annealing temperature on the anatase and rutile TiO2 nano tubes formation

    International Nuclear Information System (INIS)

    Zainovia Lockman; Kit, C.H.; Srimala Sreekantan

    2009-01-01

    Herein, we report on the optimum condition for TiO 2 titania nano tubes formation and the effect of annealing on the formation of anatse and rutile titania. Anodic oxidation was carried out in two electrodes bath consisting of 5 wt % NH 4 F ions. The anode was a 0.1 mm thick Ti foil and the cathode was Pt electrode. Anodization was conducted at 20 V. The anodised foils were subjected to morphological and structural characterizations. As-anodised foil was found to be amorphous or weakly crystalline. When the oxide was heat treated, x-ray diffraction analysis revealed the presence of (101) anatase at annealing temperature from 400 - 500 degree Celsius. This indicates that the transformation occurs at this range of temperatures. Raman spectroscopy analysis showed the diminishing of anatase peaks for samples annealed at 500 degree Celsius. At above 600 degree Celsius, x-ray diffraction pattern shows a peak belonging to the rutile peak. Transformation from anatase to rutile is thought to occur at about 500 degree Celsius with a more complete transformation at higher temperature. Annealing at higher than 600 degree Celsius induces thickening of the nano tubes wall and at above 700 degree Celsius, the nano tubes structure has completely disappeared. (author)

  4. Through-vial impedance spectroscopy of the mechanisms of annealing in the freeze-drying of maltodextrin: the impact of annealing hold time and temperature on the primary drying rate.

    Science.gov (United States)

    Smith, Geoff; Arshad, Muhammad Sohail; Polygalov, Eugene; Ermolina, Irina

    2014-06-01

    The study aims to investigate the impact of annealing hold time and temperature on the primary drying rate/duration of a 10% (w/v) solution of maltodextrin with an emphasis on how the mechanisms of annealing might be understood from the in-vial measurements of the ice crystal growth and the glass transition. The electrical impedance of the solution within a modified glass vial was recorded between 10 and 10(6) Hz during freeze-drying cycles with varying annealing hold times (1-5 h) and temperatures. Primary drying times decreased by 7%, 27% and 34% (1.1, 4.3 and 5.5 h) with the inclusion of an annealing step at temperatures of -15°C, -10°C and -5°C, respectively. The glass transition was recorded at approximately -16°C during the re-heating and re-cooling steps, which is close to the glass transition (Tg ') reported for 10% (w/v) maltodextrin and therefore indicates that a maximum freeze concentration (∼86%, w/w, from the Gordon-Taylor equation) was achieved during first freezing, with no further ice being formed on annealing. This observation, coupled to the decrease in electrical resistance that was observed during the annealing hold time, suggests that the reduction in the drying time was because of improved connectivity of ice crystals because of Ostwald ripening rather than devitrification. © 2014 Wiley Periodicals, Inc. and the American Pharmacists Association.

  5. Influence of annealing temperature on the structural, mechanical and wetting property of TiO2 films deposited by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Pradhan, Swati S.; Sahoo, Sambita; Pradhan, S.K.

    2010-01-01

    TiO 2 films have been deposited on silicon substrates by radio frequency magnetron sputtering of a pure Ti target in Ar/O 2 plasma. The TiO 2 films deposited at room temperature were annealed for 1 h at different temperatures ranging from 400 o C to 800 o C. The structural, morphological, mechanical properties and the wetting behavior of the as deposited and annealed films were obtained using Raman spectroscopy, atomic force microscopy, transmission electron microscopy, nanoindentation and water contact angle (CA) measurements. The as deposited films were amorphous, and the Raman results showed that anatase phase crystallization was initiated at annealing temperature close to 400 o C. The film annealed at 400 o C showed higher hardness than the film annealed at 600 o C. In addition, the wettability of film surface was enhanced with an increase in annealing temperature from 400 o C to 800 o C, as revealed by a decrease in water CA from 87 o to 50 o . Moreover, the water CA of the films obtained before and after UV light irradiation revealed that the annealed films remained more hydrophilic than the as deposited film after irradiation.

  6. An investigation of temperature measurement methods in nuclear power plant reactor pressure vessel annealing

    International Nuclear Information System (INIS)

    Acton, R.U.; Gill, W.; Sais, D.J.; Schulze, D.H.; Nakos, J.T.

    1996-05-01

    The objective of this project was to provide an assessment of several methods by which the temperature of a commercial nuclear power plant reactor pressure vessel (RPV) could be measured during an annealing process. This project was a coordinated effort between DOE's Office of Nuclear Energy, Science and Technology; DOE's Light Water Reactor Technology Center at Sandia National Laboratories; and the Electric Power Research Institute's Non- Destructive Evaluation Center. Ball- thermocouple probes similar to those described in NUREG/CR-5760, spring-loaded, metal- sheathed thermocouple probes, and 1778 air- suspended thermocouples were investigated in experiments that heated a section of an RPV wall to simulate a thermal annealing treatment. A parametric study of ball material, emissivity, thermal conductivity, and thermocouple function locations was conducted. Also investigated was a sheathed thermocouple failure mode known as shunting (electrical breakdown of insulation separating the thermocouple wires). Large errors were found between the temperature as measured by the probes and the true RPV wall temperature during heat-up and cool-down. At the annealing soak temperature, in this case 454 degrees C [850'F], all sensors measured the same temperature within about ±5% (23.6 degrees C [42.5 degrees F]). Because of these errors, actual RPV wall heating and cooling rates differed from those prescribed (by up to 29%). Shunting does not appear to be a problem under these conditions. The large temperature measurement errors led to the development of a thermal model that predicts the RPV wall temperature from the temperature of a ball- probe. Comparisons between the model and the experimental data for ball-probes indicate that the model could be a useful tool in predicting the actual RPV temperature based on the indicated ball- probe temperature. The model does not predict the temperature as well for the spring-loaded and air suspended probes

  7. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

    Science.gov (United States)

    Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

    2013-03-02

    Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

  8. High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

    Science.gov (United States)

    Chowdhury, A.; Schneider, J.; Dore, J.; Mermet, F.; Slaoui, A.

    2012-06-01

    Thin film polycrystalline silicon films grown on glass substrate were irradiated with an infrared continuous wave laser for defects annealing and/or dopants activation. The samples were uniformly scanned using an attachment with the laser system. Substrate temperature, scan speed and laser power were varied to find suitable laser annealing conditions. The Raman spectroscopy and Suns- V oc analysis were carried out to qualify the films quality after laser annealing. A maximum enhancement of the open circuit voltage V oc of about 100 mV is obtained after laser annealing of as-grown polysilicon structures. A strong correlation was found between the full width half maximum of the Si crystalline peak and V oc. It is interpreted as due to defects annealing as well as to dopants activation in the absorbing silicon layer. The maximum V oc reached is 485 mV after laser treatment and plasma hydrogenation, thanks to defects passivation.

  9. Ensemble annealing of complex physical systems

    OpenAIRE

    Habeck, Michael

    2015-01-01

    Algorithms for simulating complex physical systems or solving difficult optimization problems often resort to an annealing process. Rather than simulating the system at the temperature of interest, an annealing algorithm starts at a temperature that is high enough to ensure ergodicity and gradually decreases it until the destination temperature is reached. This idea is used in popular algorithms such as parallel tempering and simulated annealing. A general problem with annealing methods is th...

  10. Influence of annealing temperature on ZnO thin films grown by dual ...

    Indian Academy of Sciences (India)

    Administrator

    In electrical characterization as well, when annealing temperature was increased .... of ZnO (002) peaks and (c) crystallite size and stress generation on ZnO thin films ... sufficient kinetic energy and surface mobility to occupy stable positions ...

  11. Effects of annealing and deforming temperature on microstructure and deformation characteristics of Ti-Ni-V shape memory alloy

    Energy Technology Data Exchange (ETDEWEB)

    He Zhirong, E-mail: hezhirong01@163.com [School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong 723003 (China); Liu Manqian [School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong 723003 (China)

    2012-07-25

    Highlights: Black-Right-Pointing-Pointer The deformation behaviors of annealed Ti-50.8Ni-0.5V shape memory alloy (SMA) were given. Black-Right-Pointing-Pointer The effect of annealing temperature on microstructure and deformation characteristics of Ti-50.8Ni-0.5V SMA was shown. Black-Right-Pointing-Pointer The effect of deforming temperature on deformation characteristics of Ti-50.8Ni-0.5V SMA was given. - Abstract: Effects of annealing temperature T{sub an} and deforming temperature T{sub d} on microstructure and deformation characteristics of Ti-50.8Ni-0.5V (atomic fraction, %) shape memory alloy were investigated by means of optical microscopy and tensile test. With increasing T{sub an}, the microstructure of Ti-50.8Ni-0.5V alloy wire changes from fiber style to equiaxed grain, and the recrystallization temperature of the alloy is about 580 Degree-Sign C; the critical stress for stress-induced martensite {sigma}{sub M} of the alloy decreases first and then increases, and the minimum value 382 MPa is got at T{sub an} = 450 Degree-Sign C; the residual strain {epsilon}{sub R} first increases, then decreases, and then increases, and its maximum value 2.5% is reached at T{sub an} = 450 Degree-Sign C. With increasing T{sub d}, a transformation from shape memory effect (SME) to superelasticity (SE) occurs in the alloy annealed at different temperatures, and the SME {yields} SE transformation temperature was affected by T{sub an}; the {sigma}{sub M} of the alloy increases linearly; the {epsilon}{sub R} of the alloy annealed at 350-600 Degree-Sign C decreases first and then tends to constant, while that of the alloy annealed at 650 Degree-Sign C and 700 Degree-Sign C decreases first and then increases. To get an excellent SE at room temperature for Ti-50.8Ni-0.5V alloy, T{sub an} should be 500-600 Degree-Sign C.

  12. High-throughput sequencing of 16S rRNA gene amplicons: effects of extraction procedure, primer length and annealing temperature.

    Science.gov (United States)

    Sergeant, Martin J; Constantinidou, Chrystala; Cogan, Tristan; Penn, Charles W; Pallen, Mark J

    2012-01-01

    The analysis of 16S-rDNA sequences to assess the bacterial community composition of a sample is a widely used technique that has increased with the advent of high throughput sequencing. Although considerable effort has been devoted to identifying the most informative region of the 16S gene and the optimal informatics procedures to process the data, little attention has been paid to the PCR step, in particular annealing temperature and primer length. To address this, amplicons derived from 16S-rDNA were generated from chicken caecal content DNA using different annealing temperatures, primers and different DNA extraction procedures. The amplicons were pyrosequenced to determine the optimal protocols for capture of maximum bacterial diversity from a chicken caecal sample. Even at very low annealing temperatures there was little effect on the community structure, although the abundance of some OTUs such as Bifidobacterium increased. Using shorter primers did not reveal any novel OTUs but did change the community profile obtained. Mechanical disruption of the sample by bead beating had a significant effect on the results obtained, as did repeated freezing and thawing. In conclusion, existing primers and standard annealing temperatures captured as much diversity as lower annealing temperatures and shorter primers.

  13. Reduced water vapor transmission rates of low-temperature solution-processed metal oxide barrier films via ultraviolet annealing

    Energy Technology Data Exchange (ETDEWEB)

    Park, Seonuk; Jeong, Yong Jin; Baek, Yonghwa; Kim, Lae Ho; Jang, Jin Hyuk; Kim, Yebyeol [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of); An, Tae Kyu [Department of Polymer Science & Engineering, Korea National University of Transportation, 50 Daehak-Ro, Chungju (Korea, Republic of); Nam, Sooji, E-mail: sjnam15@etri.re.kr [Information Control Device Section, Electronics and Telecommunications Research Institute, Daejeon, 305-700 (Korea, Republic of); Kim, Se Hyun, E-mail: shkim97@yu.ac.kr [School of Chemical Engineering, Yeungnam University, Gyeongsan, North Gyeongsang 712-749 (Korea, Republic of); Jang, Jaeyoung, E-mail: jyjang15@hanyang.ac.kr [Department of Energy Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Park, Chan Eon, E-mail: cep@postech.ac.kr [POSTECH Organic Electronics Laboratory, Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784 (Korea, Republic of)

    2017-08-31

    Highlights: • Sol-gel-derived aluminum oxide thin films were prepared using ultraviolet (UV) annealing. • UV irradiation dramatically promoted the densification of AlO{sub x} during the annealing stage, thereby forming a close-packed AlO{sub x} film. • The resulting AlO{sub x} films deposited on polymer substrates exhibited good water vapor blocking properties with low water vapor transmission rates (WVTRs). - Abstract: Here, we report the fabrication of low-temperature sol-gel-derived aluminum oxide (AlO{sub x}) films via ultraviolet (UV) annealing and the investigation of their water vapor blocking properties by measuring the water vapor transmission rates (WVTRs). The UV annealing process induced the formation of a dense metal-oxygen-metal bond (Al-O-Al structure) at low temperatures (<200 °C) that are compatible with commercial plastic substrates. The density of the UV-annealed AlO{sub x} thin film at 180 °C was comparable to that of AlO{sub x} thin films that have been thermally annealed at 350 °C. Furthermore, the UV-annealed AlO{sub x} thin films exhibited a high optical transparency in the visible region (>99%) and good electrical insulating properties (∼10{sup −7} A/cm{sup 2} at 2 MV/cm). Finally, we confirmed that a dense AlO{sub x} thin film was successfully deposited onto the plastic substrate via UV annealing at low temperatures, leading to a substantial reduction in the WVTRs. The Ca corrosion test was used to measure the WVTRs of AlO{sub x} thin films deposited onto polyethylene naphthalate or polyimide substrates, determined to be 0.0095 g m{sup −2} day{sup −1} (25 °C, 50% relative humidity) and 0.26 g m{sup −2} day{sup −1}, respectively.

  14. Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

    International Nuclear Information System (INIS)

    Glasko, J.M.; Elliman, R.G.; Zou, J.; Cockayne, D.J.H.; Fitz Gerald, J.D.

    1998-01-01

    High energy (1 MeV), ion irradiation of GeSi/Si strained layers at elevated temperatures can cause strain relaxation. In this study, the effect of subsequent thermal annealing was investigated. Three distinct annealing stages were identified and correlated with the evolution of the defect microstructure. In the temperature range from 350 to 600 deg C, a gradual recovery of strain is observed. This is believed to result from the annealing of small defect clusters and the growth of voids. The voids are visible at annealing temperatures in excess of 600 deg C, consistent with an excess vacancy concentration in the irradiated alloy layer. The 600 to 750 deg C range is marked by pronounced maximal recovery of strain, and is correlated with the dissolution of faulted loops in the substrate. At temperatures in the range 750-1000 deg C, strain relaxation is observed and is correlated with the growth of intrinsic dislocations within the alloy layer. These dislocations nucleate at the alloy-substrate interface and grow within the alloy layer, towards the surface. (authors)

  15. Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

    Science.gov (United States)

    Shklyaev, A A; Latyshev, A V

    2016-12-01

    We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

  16. Reactor pressure vessel thermal annealing

    International Nuclear Information System (INIS)

    Lee, A.D.

    1997-01-01

    The steel plates and/or forgings and welds in the beltline region of a reactor pressure vessel (RPV) are subject to embrittlement from neutron irradiation. This embrittlement causes the fracture toughness of the beltline materials to be less than the fracture toughness of the unirradiated material. Material properties of RPVs that have been irradiated and embrittled are recoverable through thermal annealing of the vessel. The amount of recovery primarily depends on the level of the irradiation embrittlement, the chemical composition of the steel, and the annealing temperature and time. Since annealing is an option for extending the service lives of RPVs or establishing less restrictive pressure-temperature (P-T) limits; the industry, the Department of Energy (DOE) and the Nuclear Regulatory Commission (NRC) have assisted in efforts to determine the viability of thermal annealing for embrittlement recovery. General guidance for in-service annealing is provided in American Society for Testing and Materials (ASTM) Standard E 509-86. In addition, the American Society of Mechanical Engineers (ASME) Code Case N-557 addresses annealing conditions (temperature and duration), temperature monitoring, evaluation of loadings, and non-destructive examination techniques. The NRC thermal annealing rule (10 CFR 50.66) was approved by the Commission and published in the Federal Register on December 19, 1995. The Regulatory Guide on thermal annealing (RG 1.162) was processed in parallel with the rule package and was published on February 15, 1996. RG 1.162 contains a listing of issues that need to be addressed for thermal annealing of an RPV. The RG also provides alternatives for predicting re-embrittlement trends after the thermal anneal has been completed. This paper gives an overview of methodology and recent technical references that are associated with thermal annealing. Results from the DOE annealing prototype demonstration project, as well as NRC activities related to the

  17. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  18. Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

    Science.gov (United States)

    Danchenko, V.; Fang, P. H.; Brashears, S. S.

    1982-01-01

    Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

  19. Estimation of effective temperatures in a quantum annealer: Towards deep learning applications

    Science.gov (United States)

    Realpe-Gómez, John; Benedetti, Marcello; Perdomo-Ortiz, Alejandro

    Sampling is at the core of deep learning and more general machine learning applications; an increase in its efficiency would have a significant impact across several domains. Recently, quantum annealers have been proposed as a potential candidate to speed up these tasks, but several limitations still bar them from being used effectively. One of the main limitations, and the focus of this work, is that using the device's experimentally accessible temperature as a reference for sampling purposes leads to very poor correlation with the Boltzmann distribution it is programmed to sample from. Based on quantum dynamical arguments, one can expect that if the device indeed happens to be sampling from a Boltzmann-like distribution, it will correspond to one with an instance-dependent effective temperature. Unless this unknown temperature can be unveiled, it might not be possible to effectively use a quantum annealer for Boltzmann sampling processes. In this work, we propose a strategy to overcome this challenge with a simple effective-temperature estimation algorithm. We provide a systematic study assessing the impact of the effective temperatures in the quantum-assisted training of Boltzmann machines, which can serve as a building block for deep learning architectures. This work was supported by NASA Ames Research Center.

  20. Effect of solution annealing temperature on precipitation in 2205 duplex stainless steel

    International Nuclear Information System (INIS)

    Kashiwar, A.; Vennela, N. Phani; Kamath, S.L.; Khatirkar, R.K.

    2012-01-01

    In the present study, effect of solution annealing temperature (1050 °C and 1100 °C) and isothermal ageing (700 °C: 15 min to 6 h) on the microstructural changes in 2205 duplex stainless steel has been investigated systematically. Scanning electron microscopy and X-ray diffraction were adopted to follow the microstructural evolution, while an energy dispersive spectrometer attached to scanning electron microscope was used to obtain localised chemical information of various phases. The ferritic matrix of the two phase 2205 duplex stainless steel (∼ 45% ferrite and ∼ 55% austenite) undergoes a series of metallurgical transformations during ageing—formation of secondary austenite (γ 2 ) and precipitation of Cr and Mo rich intermetallic (chi-χ and sigma-σ) phases. For solution annealing at 1050 °C, significant amount of carbides were observed in the ferrite grains after 1 h of ageing at 700 °C. χ Phase precipitated after the precipitation of carbides—preferentially at the ferrite–ferrite and also at the ferrite–austenite boundaries. σ Phase was not observed in significant quantity even after 6 h of ageing. The sequence of precipitation in samples solution annealed at 1050 °C was found to be carbides → χ → σ. On the contrary, for samples solution annealed at 1100 °C, the precipitation of χ phase was negligible. χ Phase precipitated before σ phase, preferentially along the ferrite–ferrite grain boundaries and was later consumed in the σ phase precipitation. The σ phase precipitated via the eutectoid transformation of ferrite to yield secondary austenite γ 2 and σ phase in the ferrite and along the ferrite–austenite grain boundaries. An increase in the volume fraction of γ 2 and σ phase with simultaneous decrease in the ferrite was evidenced with ageing. - Highlights: ► Effect of solution annealing temperature on microstructural evolution is studied. ► χ Phase precipitated preferentially in the samples solution annealed at

  1. Effect of solution annealing temperature on precipitation in 2205 duplex stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Kashiwar, A., E-mail: akashiwar@gmail.com [Department of Metallurgical and Materials Engineering, Visvesvaraya National Institute of Technology (VNIT), South Ambazari Road, Nagpur-440010, Maharashtra (India); Vennela, N. Phani, E-mail: phanivennela@gmail.com [Department of Metallurgical and Materials Engineering, Visvesvaraya National Institute of Technology (VNIT), South Ambazari Road, Nagpur-440010, Maharashtra (India); Kamath, S.L., E-mail: kamath@iitb.ac.in [Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay (IITB), Powai, Mumbai-400076, Maharashtra (India); Khatirkar, R.K., E-mail: rajesh.khatirkar@gmail.com [Department of Metallurgical and Materials Engineering, Visvesvaraya National Institute of Technology (VNIT), South Ambazari Road, Nagpur-440010, Maharashtra (India)

    2012-12-15

    In the present study, effect of solution annealing temperature (1050 Degree-Sign C and 1100 Degree-Sign C) and isothermal ageing (700 Degree-Sign C: 15 min to 6 h) on the microstructural changes in 2205 duplex stainless steel has been investigated systematically. Scanning electron microscopy and X-ray diffraction were adopted to follow the microstructural evolution, while an energy dispersive spectrometer attached to scanning electron microscope was used to obtain localised chemical information of various phases. The ferritic matrix of the two phase 2205 duplex stainless steel ({approx} 45% ferrite and {approx} 55% austenite) undergoes a series of metallurgical transformations during ageing-formation of secondary austenite ({gamma}{sub 2}) and precipitation of Cr and Mo rich intermetallic (chi-{chi} and sigma-{sigma}) phases. For solution annealing at 1050 Degree-Sign C, significant amount of carbides were observed in the ferrite grains after 1 h of ageing at 700 Degree-Sign C. {chi} Phase precipitated after the precipitation of carbides-preferentially at the ferrite-ferrite and also at the ferrite-austenite boundaries. {sigma} Phase was not observed in significant quantity even after 6 h of ageing. The sequence of precipitation in samples solution annealed at 1050 Degree-Sign C was found to be carbides {yields} {chi} {yields} {sigma}. On the contrary, for samples solution annealed at 1100 Degree-Sign C, the precipitation of {chi} phase was negligible. {chi} Phase precipitated before {sigma} phase, preferentially along the ferrite-ferrite grain boundaries and was later consumed in the {sigma} phase precipitation. The {sigma} phase precipitated via the eutectoid transformation of ferrite to yield secondary austenite {gamma}{sub 2} and {sigma} phase in the ferrite and along the ferrite-austenite grain boundaries. An increase in the volume fraction of {gamma}{sub 2} and {sigma} phase with simultaneous decrease in the ferrite was evidenced with ageing. - Highlights

  2. Thermal stress modification in regenerated fiber Bragg grating via manipulation of glass transition temperature based on CO₂-laser annealing.

    Science.gov (United States)

    Lai, Man-Hong; Lim, Kok-Sing; Gunawardena, Dinusha S; Yang, Hang-Zhou; Chong, Wu-Yi; Ahmad, Harith

    2015-03-01

    In this work, we have demonstrated thermal stress relaxation in regenerated fiber Bragg gratings (RFBGs) by using direct CO₂-laser annealing technique. After the isothermal annealing and slow cooling process, the Bragg wavelength of the RFBG has been red-shifted. This modification is reversible by re-annealing and rapid cooling. It is repeatable with different cooling process in the subsequent annealing treatments. This phenomenon can be attributed to the thermal stress modification in the fiber core by means of manipulation of glass transition temperature with different cooling rates. This finding in this investigation is important for accurate temperature measurement of RFBG in dynamic environment.

  3. THE RETENTION OF KRYPTON IN POLYCRYSTALLINE SILICON DURING HIGH-TEMPERATURE ANNEALING

    NARCIS (Netherlands)

    GREUTER, MJW; NIESEN, L; VANVEEN, A; EVANS, JH

    1994-01-01

    In a study into the annealing behaviour of silicon containing a few atomic per cent of krypton, it was found that, even at 0.87 of the silicon melting temperature, approximately 90% of the original krypton was still present. This result is compared with analogous work on metals where copious inert

  4. Exchange bias behavior in Ni{sub 50.0}Mn{sub 35.5} In{sub 14.5} ribbons annealed at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, T. [Dept. de Fisica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Sato Turtelli, R.; Groessinger, R. [Institut fur Festkoerperphysik, Technische Universitaet Wien, Wiedner Hauptstr. 8-10, 1040 Vienna (Austria); Sanchez, M.L.; Santos, J.D.; Rosa, W.O.; Prida, V.M. [Dept. de Fisica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain); Escoda, Ll.; Sunol, J.J. [Campus de Montilivi, Universidad de Girona, edifici PII, Lluis Santalo s/n. 17003 Girona (Spain); Koledov, V. [Kotelnikov Institute of Radio Engineering and Electronics, RAS, Moscow 125009 (Russian Federation); Hernando, B., E-mail: grande@uniovi.es [Dept. de Fisica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo (Spain)

    2012-10-15

    Heusler alloy Ni{sub 50.0}Mn{sub 35.5}In{sub 14.5} ribbons were prepared by melt-spinning technique. Several short time annealings were carried out in order to enhance the exchange bias effect in this alloy ribbon. The magnetic transition temperature increases with the annealing, compared to the as-spun sample, however no significant differences in respective Curie temperatures were observed for austenite and martensite phases in such annealed samples. Exchange bias effect is observed at low temperatures for all samples and practically vanishes at 60 K for the as-spun sample, whereas for the annealed ribbons it vanishes at 100 K.

  5. Annealing temperature effect on the properties of mercury-doped TiO{sub 2} films prepared by sol-gel dip-coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Mechiakh, R., E-mail: raouf_mechiakh@yahoo.fr [Departement de Medecine, Faculte de Medecine, Universite Hadj Lakhdar Batna, Batna (Algeria); Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia); Ben Sedrine, N. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia); Karyaoui, M. [Departement de Medecine, Faculte de Medecine, Universite Hadj Lakhdar Batna, Batna (Algeria); Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia); Chtourou, R. [Laboratoire de Photovoltaique de Semi-conducteurs et de Nanostructures, Centre de Recherche et des Technologies de l' Energie (CRTEn), BP. 95, Hammam-Lif 2050 (Tunisia)

    2011-04-15

    This work presents the annealing temperature effect on the properties of mercury (Hg)-doped titanium dioxide (TiO{sub 2}). Thin films and polycrystalline powders have been prepared by sol-gel process. The structure, surface morphology and optical properties, as a function of the annealing temperature, have been studied by atomic force microscopy (AFM), Raman, reflectance and ellipsometric spectroscopies. In order to determine the transformation points, we have analyzed the xerogel-obtained powder by differential scanning calorimetry (DSC). Raman spectroscopy shows the crystalline anatase and rutile phases for the films annealed at 400 deg. C and 1000 deg. C respectively. The AFM surface morphology results indicate that the particle size increases from 14 to 57 nm by increasing the annealing temperature. The complex index and the optical band gap (E{sub g}) of the films were determined by the spectroscopic ellipsometry analysis. We have found that the optical band gap decreases by increasing the annealing temperature.

  6. Influence of annealing temperature on erbium ion electroluminescence in Si : (Er,O) diodes with (111) substrate orientation

    CERN Document Server

    Sobolev, N A; Nikolaev, Y A

    2001-01-01

    A study has been made of the influence of temperature of the second annealing that promotes formation of optically and electrically active centers o the erbium ion electroluminescence at lambda approx = 1.54 mu m wavelength in (111) Si : (Er,O) diodes. Doping has been performed by implantation of erbium and oxygen ions at 2.0, 1.6 MeV and 0.28, 0.22 MeV energies and 3 x 10 sup 1 sup 4 cm sup - sup 2 and 3 x 10 sup 1 sup 5 cm sup - sup 2 doses, respectively. The room temperature electroluminescence intensity under the breakdown regime increases with increasing annealing temperature from 700 to 950 deg C. After annealing in the range of 975-1100 deg C, erbium electroluminescence under the breakdown regime is not observed due to appearance of microplasmas. The injection electroluminescence intensity at 80 K decreases with increasing temperature from 700 to 1100 deg C

  7. The effects of annealing temperature and cooling rate on carbide precipitation behavior in H13 hot-work tool steel

    International Nuclear Information System (INIS)

    Kang, Minwoo; Park, Gyujin; Jung, Jae-Gil; Kim, Byung-Hoon; Lee, Young-Kook

    2015-01-01

    Highlights: • Unexpected Mo carbides formed during slow cooling from low annealing temperatures. • Mo carbides formed during the migration of Mo for a transition of Cr-rich carbide. • Mo carbides were precipitated at the boundaries of M 7 C 3 carbides and ferrite grains. • Annealing conditions for the precipitation of Mo carbides were discussed. - Abstract: The precipitation behavior of H13 hot-work tool steel was investigated as a function of both annealing temperature and cooling rate through thermodynamic calculations and microstructural analyses using transmission and scanning electron microscope and a dilatometer. The V-rich MC carbide and Cr-rich M 7 C 3 and M 23 C 6 carbides were observed in all annealed specimens regardless of annealing and cooling conditions, as expected from an equilibrium phase diagram of the steel used. However, Mo-rich M 2 C and M 6 C carbides were unexpectedly precipitated at a temperature between 675 °C and 700 °C during slow cooling at a rate of below 0.01 °C/s from the annealing temperatures of 830 °C and below. The solubility of Mo in both M 7 C 3 and ferrite reduces with decreasing temperature during cooling. Mo atoms diffuse out of both M 7 C 3 and ferrite, and accumulate locally at the interface between M 7 C 3 and ferrite. Mo carbides were form at the interface of M 7 C 3 carbides during the transition of Cr-rich M 7 C 3 to stable M 23 C 6

  8. Influence of low-temperature annealing on magnetic properties of (Nd0.625Ni0.375)85Al15 metallic glass

    International Nuclear Information System (INIS)

    Xu Feng; Wang Zhiming; Chen Guang; Jiang Jianzhong; Du Youwei

    2008-01-01

    After a review of the selection process of (Nd 0.625 Ni 0.375 ) 85 Al 15 as a metallic glass with a relatively high glass-forming ability, we investigate the influences of its phase transitions by duplicating the heating process of the isochronal thermal analysis with low-temperature annealings. The structure, thermal stability and magnetic properties are characterized. And the influences on magnetic properties are particularly discussed with emphasis. Both the annealing processes, to the glass-transition temperature and to the onset temperature of crystallization, bring about a higher coercivity of the sample and a higher freezing temperature of the spin-glass-state. For the sample annealed to the onset temperature of crystallization, the influence is quite obvious and is ascribed to the formation of ferrimagnetic Nd 7 Ni 3 phase, as detected by XRD. For the sample annealed to the glass-transition temperature, the indistinct influence is further identified with the analysis of the frequency dependence of the spin-glass-state, and it is mainly attributed to the change of the short-range order in the amorphous matrix

  9. Effect Of Low-Temperature Annealing On The Properties Of Ni-P Amorphous Alloys Deposited Via Electroless Plating

    Directory of Open Access Journals (Sweden)

    Zhao Guanlin

    2015-06-01

    Full Text Available Amorphous Ni-P alloys were prepared via electroless plating and annealing at 200°C at different times to obtain different microstructures. The effects of low-temperature annealing on the properties of amorphous Ni-P alloys were studied. The local atomic structure of the annealed amorphous Ni-P alloys was analyzed by calculating the atomic pair distribution function from their X-ray diffraction patterns. The results indicate that the properties of the annealed amorphous Ni-P alloys are closely related to the order atomic cluster size. However, these annealed Ni-P alloys maintained their amorphous structure at different annealing times. The variation in microhardness is in agreement with the change in cluster size. By contrast, the corrosion resistance of the annealed alloys in 3.5 wt% NaCl solution increases with the decrease in order cluster size.

  10. Effect of Annealing on Strain-Temperature Response under Constant Tensile Stress in Cold-Worked NiTi Thin Wire

    OpenAIRE

    Yan, Xiaojun; Van Humbeeck, Jan

    2011-01-01

    The present paper aims to understand the influence of annealing on the strain-temperature response of a cold-worked NiTi wire under constant tensile stress. It was found that transformation behavior, stress-strain relationship, and strain-temperature response of the cold-worked NiTi wire are strongly affected by the annealing temperature. Large martensitic strains can be reached even though the applied stress is below the plateau stress of the martensite phase. At all stress levels transforma...

  11. Effect of Annealing Temperature on the Mechanical and Corrosion Behavior of a Newly Developed Novel Lean Duplex Stainless Steel.

    Science.gov (United States)

    Guo, Yanjun; Hu, Jincheng; Li, Jin; Jiang, Laizhu; Liu, Tianwei; Wu, Yanping

    2014-09-12

    The effect of annealing temperature (1000-1150 °C) on the microstructure evolution, mechanical properties, and pitting corrosion behavior of a newly developed novel lean duplex stainless steel with 20.53Cr-3.45Mn-2.08Ni-0.17N-0.31Mo was studied by means of optical metallographic microscopy (OMM), scanning electron microscopy (SEM), magnetic force microscopy (MFM), scanning Kelvin probe force microscopy (SKPFM), energy dispersive X-ray spectroscopy (EDS), uniaxial tensile tests (UTT), and potentiostatic critical pitting temperature (CPT). The results showed that tensile and yield strength, as well as the pitting corrosion resistance, could be degraded with annealing temperature increasing from 1000 up to 1150 °C. Meanwhile, the elongation at break reached the maximum of 52.7% after annealing at 1050 °C due to the effect of martensite transformation induced plasticity (TRIP). The localized pitting attack preferentially occurred at ferrite phase, indicating that the ferrite phase had inferior pitting corrosion resistance as compared to the austenite phase. With increasing annealing temperature, the pitting resistance equivalent number (PREN) of ferrite phase dropped, while that of the austenite phase rose. Additionally, it was found that ferrite possessed a lower Volta potential than austenite phase. Moreover, the Volta potential difference between ferrite and austenite increased with the annealing temperature, which was well consistent with the difference of PREN.

  12. Effect of annealing temperature on electrochemical characteristics of ruthenium oxide/multi-walled carbon nanotube composites

    Energy Technology Data Exchange (ETDEWEB)

    Seo, Min-Kang [Department of Chemistry, Inha University, 253, Incheon 402-751 (Korea, Republic of); Saouab, Abdelghani [Department of Mechanical Engineering, University of Le Havre, Place Robert Schuman, BP 4006, 76610 Le Havre (France); Park, Soo-Jin, E-mail: sjpark@inha.ac.k [Department of Chemistry, Inha University, 253, Incheon 402-751 (Korea, Republic of)

    2010-02-25

    The preparation and characterization of high-surface-area ruthenium oxide (RuO{sub 2})/multi-walled carbon nanotubes (MWCNTs) composite electrodes for use in supercapacitors is reported in this work. The RuO{sub 2}/MWCNTs composites were prepared by the polyol process of RuO{sub 2} into MWCNTs and by Ru annealing in air before mixed with MWCNTs. The chemically oxidized and annealed Ru nanoparticles contribute a pseudocapacitance to the electrodes and dramatically improve the energy storage characteristics of the MWCNTs. These composites annealed at 200 deg. C demonstrate specific capacitances in excess of 130 F/g in comparison to 80 F/g for pristine MWCNTs. The annealing temperature is found to play an important role, as it affects the electrochemical performance of annealed RuO{sub 2}/MWCNTs composites critically due to its influence on the diffusion of protons into the structure.

  13. Temperature dependence of annealing on the contact resistance of MoS2 with graphene electrodes observed

    Science.gov (United States)

    Lu, Qin; Fang, Cizhe; Liu, Yan; Shao, Yao; Han, Genquan; Zhang, Jincheng; Hao, Yue

    2018-04-01

    Two-dimensional (2D) materials are promising candidates for atomically thin nanoelectronics. Among them, MoS2 has attracted considerable attention in the nanoscience and nanotechnology community owing to its unique characteristics including high electron mobility and intrinsic band gap. In this study, we experimentally explored the contact resistances of MoS2 films based on much layered graphene films as electrodes using the circular transmission line model (CTLM). The variation in the chemical composition of the material is thoroughly analyzed by Raman and X-ray photoelectric spectroscopy (XPS) measurements. Experimental results demonstrate that annealing followed by oxygen plasma treatment can effectively improve the contact resistance. Furthermore, the current-voltage curves measured after different annealing temperatures indicate good linear characteristics, which means a marked improvement in electrical property. Calculations show that a relatively low contact resistance of ˜4.177 kΩ (ignoring its size) without back gate voltage in a single-layer graphene/MoS2 structure at an optimal annealing temperature of 500 °C is achieved. This work about the effect of annealing temperature on contact resistance can also be employed for other 2D materials, which lays a foundation for further development of novel 2D material devices.

  14. Post-growth annealing of Bridgman-grown CdZnTe and CdMnTe crystals for room-temperature nuclear radiation detectors

    International Nuclear Information System (INIS)

    Egarievwe, Stephen U.; Yang, Ge; Egarievwe, Alexander A.; Okwechime, Ifechukwude O.; Gray, Justin; Hales, Zaveon M.; Hossain, Anwar; Camarda, Giuseppe S.; Bolotnikov, Aleksey E.; James, Ralph B.

    2015-01-01

    Bridgman-grown cadmium zinc telluride (CdZnTe or CZT) and cadmium manganese telluride (CdMnTe or CMT) crystals often have Te inclusions that limit their performances as X-ray- and gamma-ray-detectors. We present here the results of post-growth thermal annealing aimed at reducing and eliminating Te inclusions in them. In a 2D analysis, we observed that the sizes of the Te inclusions declined to 92% during a 60-h annealing of CZT at 510 °C under Cd vapor. Further, tellurium inclusions were eliminated completely in CMT samples annealed at 570 °C in Cd vapor for 26 h, whilst their electrical resistivity fell by an order of 10 2 . During the temperature-gradient annealing of CMT at 730 °C and an 18 °C/cm temperature gradient for 18 h in a vacuum of 10 −5 mbar, we observed the diffusion of Te from the sample, so causing a reduction in size of the Te inclusions. For CZT samples annealed at 700 °C in a 10 °C/cm temperature gradient, we observed the migration of Te inclusions from a low-temperature region to a high one at 0.022 μm/s. During the temperature-gradient annealing of CZT in a vacuum of 10 −5 mbar at 570 °C and 30 °C/cm for 18 h, some Te inclusions moved toward the high-temperature side of the wafer, while other inclusions of the same size, i.e., 10 µm in diameter, remained in the same position. These results show that the migration, diffusion, and reaction of Te with Cd in the matrix of CZT- and CMT-wafers are complex phenomena that depend on the conditions in local regions, such as composition and structure, as well as on the annealing conditions

  15. Effects of annealing temperature on the structures, ferroelectric and magnetic properties of Aurivillius Bi5Ti3FeO15 polycrystalline films

    International Nuclear Information System (INIS)

    Bai, W.; Zhu, J.Y.; Wang, J.L.; Lin, T.; Yang, J.; Meng, X.J.; Tang, X.D.; Zhu, Z.Q.; Chu, J.H

    2012-01-01

    The effects of annealing temperature on the structures, ferroelectric and magnetic properties of Aurivillius layer-structured Bi 5 Ti 3 FeO 15 (BTF) films were investigated. It was found that an annealing temperature above 625 °C can lead to the appearance of Bi 4 Ti 3 O 12 (BiT) secondary phase on Pt substrates. The reduction of the grain sizes was simultaneously confirmed by X-ray diffraction and atomic force microscopy with the introduction of the BiT phase. Moreover, the remanent polarization and coercive field of the BTF films were dramatically enhanced with the introduction of the BiT phase. Improved ferromagnetism for the BTF films was demonstrated upon increasing annealing temperature. Our data indicated that the ferroelectricity strongly correlated with the growth orientation of the BTF films. Finally, the possible factors for the obvious increase of the remanent polarization and coercive field, and the possible reasons for the enhanced ferromagnetic properties were discussed with increasing annealing temperature. - Highlights: ► Effects of annealing temperature on physical properties of BTF films were studied. ► Improved multiferroic properties were shown with annealing temperature. ► Ferroelectricity strongly depended on the growth orientation of the BTF films. ► Possible factors were proposed to explain the improved multiferroic properties.

  16. Effects of High-Temperature Annealing in Air on Hi-Nicalon Fiber-Reinforced Celsian Matrix Composites

    Science.gov (United States)

    Bansal, Narottam P.

    2008-01-01

    BN/SiC-coated Hi-Nicalon fiber-reinforced celsian matrix composites (CMC) were annealed for 100 h in air at various temperatures to 1200 C, followed by flexural strength measurements at room temperature. Values of yield stress and strain, ultimate strength, and composite modulus remain almost unchanged for samples annealed up to 1100 C. A thin porous layer formed on the surface of the 1100 C annealed sample and its density decreased from 3.09 to 2.90 g/cu cm. The specimen annealed at 1200 C gained 0.43 wt%, was severely deformed, and was covered with a porous layer of thick shiny glaze which could be easily peeled off. Some gas bubbles were also present on the surface. This surface layer consisted of elongated crystals of monoclinic celsian and some amorphous phase(s). The fibers in this surface ply of the CMC had broken into small pieces. The fiber-matrix interface strength was characterized through fiber push-in technique. Values of debond stress, alpha(sub d), and frictional sliding stress, tau(sub f), for the as-fabricated CMC were 0.31+/-0.14 GPa and 10.4+/-3.1 MPa, respectively. These values compared with 0.53+/-0.47 GPa and 8.33+/-1.72 MPa for the fibers in the interior of the 1200 C annealed sample, indicating hardly any change in fiber-matrix interface strength. The effects of thermal aging on microstructure were investigated using scanning electron microscopy. Only the surface ply of the 1200 C annealed specimens had degraded from oxidation whereas the bulk interior part of the CMC was unaffected. A mechanism is proposed explaining the various steps involved during the degradation of the CMC on annealing in air at 1200 C.

  17. Annealing temperature effect on electrical properties of MEH-PPV thin film via spin coating method

    Science.gov (United States)

    Azhar, N. E. A.; Shariffudin, S. S.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

    2018-05-01

    Organic semiconductor has been discovered in different application devices such as organic light emitting diodes (OLEDs). Poly [2-methoxy-5(2' -ethylhexyloxy)-1, 4-phenylenevinylene), MEH-PPV widely used in this device because its ability to produce a good optical quality films. The MEH-PPV was prepared on glass substrate by spin coating method. The thin film was investigated at different annealing temperatures. The scanning electron micrographs (SEM) revealed that sample annealed at 50°C showed uniformity and less aggregation on morphology polymer thin film. Optical properties showed the intensities of visible emission increased as temperatures increased. The current-voltage (I-V) measurement revealed that the temperature of 50°C showed high conductive and it is suitable for optoelectronic device.

  18. Low temperature annealing of cold-drawn pearlitic steel wire

    DEFF Research Database (Denmark)

    Zhang, Xiaodan; Bech, Jakob Ilsted; Hansen, Niels

    2015-01-01

    Cold-drawn pearlitic steel wires are nanostructured and the flow stress at room temperature can reach values above 6 GPa. A typical characteristic of the nanostructured metals, is the low ductility and thermal stability. In order to optimize both the processing and application of the wires......, the thermal behaviour is of interest. This has been studied by annealing the wires for 1h at temperatures from ambient temperature to 300 ℃ (573 K). It is expected that a raising temperature may lead to structural changes and a reduction in strength. The change in strength is however not expected to be large....... For this reason we have applied a very precise technique to measure the tensile properties of the wires from a strain of 10-4 to the maximum strain of about 1-2%. The structural changes have also been followed to estimate and relate strength changes to changes in structural parameters and morphology....

  19. Evolution of the surface plasmon resonance of Au:TiO{sub 2} nanocomposite thin films with annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Borges, J., E-mail: joelborges@fisica.uminho.pt [Universidade do Minho, Centro/Departamento de Física (Portugal); Buljan, M.; Sancho-Parramon, J.; Bogdanovic-Radovic, I.; Siketic, Z. [Rudjer Boskovic Institute (Croatia); Scherer, T.; Kübel, C. [Karlsruhe Institute of Technology (KIT), Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility - KNMF (Germany); Bernstorff, S. [Elettra-Sincrotrone Trieste (Italy); Cavaleiro, A. [University of Coimbra, SEG-CEMUC, Mechanical Engineering Department (Portugal); Vaz, F.; Rolo, A. G. [Universidade do Minho, Centro/Departamento de Física (Portugal)

    2014-12-15

    This paper reports on the changes in the structural and morphological features occurring in a particular type of nanocomposite thin-film system, composed of Au nanoparticles (NPs) dispersed in a host TiO{sub 2} dielectric matrix. The structural and morphological changes, promoted by in-vacuum annealing experiments of the as-deposited thin films at different temperatures (ranging from 200 to 800 °C), resulted in a well-known localized surface plasmon resonance (LSPR) phenomenon, which gave rise to a set of different optical responses that can be tailored for a wide number of applications, including those for optical-based sensors. The results show that the annealing experiments enabled a gradual increase of the mean grain size of the Au NPs (from 2 to 23 nm), and changes in their distributions and separations within the dielectric matrix. For higher annealing temperatures of the as-deposited films, a broad size distribution of Au NPs was found (sizes up to 100 nm). The structural conditions necessary to produce LSPR activity were found to occur for annealing experiments above 300 °C, which corresponded to the crystallization of the gold NPs, with an average size strongly dependent on the annealing temperature itself. The main factor for the promotion of LSPR was the growth of gold NPs and their redistribution throughout the host matrix. On the other hand, the host matrix started to crystallize at an annealing temperature of about 500 °C, which is an important parameter to explain the shift of the LSPR peak position to longer wavelengths, i.e. a red-shift.

  20. Influence of annealing temperature and environment on the properties of indium tin oxide thin films

    International Nuclear Information System (INIS)

    Wang, R X; Beling, C D; Fung, S; Djurisic, A B; Ling, C C; Kwong, C; Li, S

    2005-01-01

    Indium tin oxide (ITO) thin films were deposited on glass substrates using the e-beam evaporating technique. The influence of deposition rate and post-deposition annealing on the optical properties of the films was investigated in detail. It is found that the deposition rate and annealing conditions strongly affect the optical properties of the films. The transmittance of films greatly increases with increasing annealing temperature below 300 deg. C but drastically drops at 400 deg. C when they are annealed in forming gas (mixed N 2 and H 2 gas). An interesting phenomenon observed is that the transmittance of the darkened film can recover under further 400 deg. C annealing in air. Atomic force microscopy, x-ray diffraction and x-ray photoemission spectroscopy were employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the loss and re-incorporating of oxygen are responsible for the reversible behaviour of the ITO thin films

  1. Role of annealing temperature on microstructural and electro-optical properties of ITO films produced by sputtering

    Science.gov (United States)

    Senol, Abdulkadir; Gulen, Mahir; Yildirim, Gurcan; Ozturk, Ozgur; Varilci, Ahmet; Terzioglu, Cabir; Belenli, Ibrahim

    2013-03-01

    In this study, we investigate the effect of annealing temperature on electrical, optical and microstructural properties of indium tin oxide (ITO) films deposited onto Soda lime glass substrates by conventional direct current (DC) magnetron reactive sputtering technique at 100 watt using an ITO ceramic target (In2O3:SnO2, 90:10 wt. %) in argon atmosphere at room temperature. The films obtained are exposed to the calcination process at different temperature up to 700 ° C. Resistivity, Hall Effect, X-ray diffractometer (XRD), ultra violet-visible spectrometer (UV-vis) and atomic force microscopy (AFM) measurements are performed to characterize the samples. Moreover, phase purity, surface morphology, optical and photocatalytic properties of the films are compared with each other. Furthermore, mobility, carrier density and conductivity characteristics of the samples prepared are carried out as function of temperature in the range of 80-300 K at the magnetic field of 0.550 T. The results obtained show that all the properties depend strongly on the annealing temperature and in fact the film annealed at 400 ° C obtains the better optical properties due to the high refractive index while the film produced at 100 °C exhibits much better photoactivity than the other films as a result of the large optical energy band gap.

  2. Effects of hydrogen annealing on the room temperature ferromagnetism and optical properties of Cr-doped ZnO nanoparticles

    International Nuclear Information System (INIS)

    Tong Liuniu; Wang Yichao; He Xianmei; Han Huaibin; Xia Ailin; Hu Jinlian

    2012-01-01

    We explore the effects of hydrogen annealing on the room temperature ferromagnetism and optical properties of Cr-doped ZnO nanoparticles synthesized by the sol-gel method. X-ray diffraction and x-ray photoelectron spectroscopy data show evidence that Cr has been incorporated into the wurtzite ZnO lattice as Cr 2+ ions substituting for Zn 2+ ions without any detectable secondary phase in as-synthesized Zn 0.97 Cr 0.03 O nanopowders. The room temperature magnetization measurements reveal a large enhancement of saturation magnetization M s as well as an increase of coercivity of H 2 -annealed Zn 0.97 Cr 0.03 O:H samples. It is found that the field-cooled magnetization curves as a function of temperature from 40 to 400 K can be well fitted by a combination of a standard Bloch spin-wave model and Curie–Weiss law. The values of the fitted parameters of the ferromagnetic exchange interaction constant a and the Curie constant C of H 2 -annealed Zn 0.97 Cr 0.03 O:H nanoparticles are almost doubled upon H 2 -annealing. Photoluminescence measurements show evidence that the shallow donor defect or/and defect complexes such as hydrogen occupying an oxygen vacancy H o may play an important role in the origin of H 2 -annealing induced enhancement of ferromagnetism in Cr-H codoped ZnO nanoparticles. - Graphical Abstract: The H 2 -annealing induced enhancement of room temperature ferromagnetism in Cr-doped ZnO nanoparticles is observed. It is found that the field-cooled M-T curves can be well fitted by a combination of a standard Bloch spin-wave model and Curie–Weiss law. The values of the fitted parameters of the ferromagnetic exchange interaction constant a and the Curie constant C of H 2 -annealed Zn 0.97 Cr 0.03 O:H nanoparticles are almost doubled upon H 2 -annealing. The PL data show evidence that the hydrogen related shallow donor defect or/and defect complexes may be responsible for it. Display Omitted Highlights: ► The H 2 -annealing induced a large enhancement of

  3. The Role of Annealing Temperature on Structural and Magnetic Properties of NdFeB Thin Films

    Directory of Open Access Journals (Sweden)

    A. Khanjani

    2016-06-01

    Full Text Available In the present research NdFeB thin films coupled with buffer and capping layer of W were formed on Si/SiO2 substrate by means of RF magnetron sputtering. The system was annealed at vaccum at different temperatures of 450, 500, 550,. 600 and 650 °C Phase analysis was carried out by XRD and it was found that NdFeB was formed without the formation of any kind of secondary phase. The cross sectional and grain size of the thin films were measured by scanning electron microscopy. Morphological studies were performed by atomic force microscopy. Magnetic properties of thin films including coercivity, saturation of magnetization and hysteresis area were evcaluated by vibrating sample magnetometer. It was found that by annealing at 400 °C the amorphous layer was formed.The highest intensity of peaks was formed at 550 °C and with an increase in temperature the intensity was declined. The grain size was increased by temperature and had an impact on the coercivity. With an increase of temperature up to 600 °C, perpendicular coercivity was increased and then by further increase of temperatute, coercivity was reduced. Based on the obtained data the temperature of 600 °C was selected as the optimum annealing temperature for reaching enhanced structural and magnetic feature.

  4. Rapid thermal pulse annealing

    International Nuclear Information System (INIS)

    Miller, M.G.; Koehn, B.W.; Chaplin, R.L.

    1976-01-01

    Characteristics of recovery processes have been investigated for cases of heating a sample to successively higher temperatures by means of isochronal annealing or by using a rapid pulse annealing. A recovery spectra shows the same features independent of which annealing procedure is used. In order to determine which technique provides the best resolution, a study was made of how two independent first-order processes are separated for different heating rates and time increments of the annealing pulses. It is shown that the pulse anneal method offers definite advantages over isochronal annealing when annealing for short time increments. Experimental data by means of the pulse anneal techniques are given for the various substages of stage I of aluminium. (author)

  5. Annealing temperature dependent non-monotonic d{sup 0} ferromagnetism in pristine In{sub 2}O{sub 3} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Haiming; Xing, Pengfei, E-mail: pfxing@tju.edu.cn; Yao, Dongsheng; Wu, Ping

    2017-05-01

    Cubic bixbyite In{sub 2}O{sub 3} nanoparticles with room temperature d{sup 0} ferromagnetism were prepared by sol-gel method with the air annealing temperature ranging from 500 to 900 °C. X-ray diffraction, X-ray photoelectron spectroscopy, Raman-scattering and photoluminescence were carried out to demonstrate the presence of oxygen vacancies. The lattice constant, the atomic ratio of crystal O and In, the Raman peak at 369 cm{sup −1}, the PL emission peak at 396 nm and the saturation magnetization of d{sup 0} ferromagnetism all had a consistent non-monotonic change with the increasing annealing temperature. With further considering the relation between the grain size and the distribution of oxygen vacancies, we think that d{sup 0} ferromagnetism in our samples is directly related with the singly charged oxygen vacancies at the surface of In{sub 2}O{sub 3} nanoparticles. - Highlights: • Effect of air-annealing temperature on the d{sup 0} ferromagnetism of pure In{sub 2}O{sub 3}. • Oxygen-deficiency states of all samples were detected by Raman scattering and PL. • Ferromagnetism changes non-monotonically with the increasing annealing temperature. • d{sup 0} ferromagnetism in our In{sub 2}O{sub 3} nanoparticles is related with the surface V{sub O}{sup +}.

  6. Effect of Annealing and Operating Substrate Temperature on Methanol Gas Sensing Properties of SnO2 Thin Films

    Directory of Open Access Journals (Sweden)

    Priyanka Kakoty

    2017-04-01

    Full Text Available SnO2 based sensing nano-material have been synthesized by simple chemical route using Stannic (IV chloride-pentahydrate (SnCl4.5H2O as precursor. The structural properties of the prepared SnO2 nano-particles annealed at different temperatures have been characterized by X-ray diffraction (XRD analysis. The XRD patterns showed pure bulk SnO2 with a tetragonal rutile structure in the nano-powders. By increasing the annealing temperatures, the size of crystals were seen to increase, the diffraction peaks were found narrower and the intensity was higher. SnO2 films prepared by spin coating the prepared nano-material solution was tested at different temperatures for methanol vapour and it showed that the film prepared from SnO2 powder annealed at 500 0C shows the higher sensitivity to methanol vapour at 150 0C substrate temperature with significantly low response and recovery time.

  7. Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films

    International Nuclear Information System (INIS)

    Yen, C.-Y.; Jian, S.-R.; Chen, G.-J.; Lin, C.-M.; Lee, H.-Y.; Ke, W.-C.; Liao, Y.-Y.; Yang, P.-F.; Wang, C.-T.; Lai, Y.-S.; Jang, Jason S.-C.; Juang, J.-Y.

    2011-01-01

    ZnO thin films grown on Si(1 1 1) substrates by using atomic layer deposition (ALD) were annealed at the temperatures ranging from 300 to 500 deg. C. The X-ray diffraction (XRD) results show that the annealed ZnO thin films are highly (0 0 2)-oriented, indicating a well ordered microstructure. The film surface examined by the atomic force microscopy (AFM), however, indicated that the roughness increases with increasing annealing temperature. The photoluminescence (PL) spectrum showed that the intensity of UV emission was strongest for films annealed at 500 deg. C. The mechanical properties of the resultant ZnO thin films investigated by nanoindentation reveal that the hardness decreases from 9.2 GPa to 7.2 GPa for films annealed at 300 deg. C and 500 deg. C, respectively. On the other hand, the Young's modulus for the former is 168.6 GPa as compared to a value of 139.5 GPa for the latter. Moreover, the relationship between the hardness and film grain size appear to follow closely with the Hall-Petch equation.

  8. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  9. Results of performance testing the Russian RPV temperature measurement probe used for annealing

    International Nuclear Information System (INIS)

    Nakos, J.T.; Selsky, S.

    1998-03-01

    This paper provides information on three (3) topics related to temperature measurements in an annealing procedure: (1) results of a series of experiments performed by CNIITMASH of the Russian consortium MOHT on their reactor pressure vessel (RPV) temperature measurement probe, (2) a discussion regarding uncertainties and errors in RPV temperature measurements, and (3) predictions from a thermal model of a spherical RPV temperature measurement probe. MOHT teamed with MPR Associates and was to perform the Annealing Demonstration Project (ADP) on behalf of the US Department of Energy, ESEERCo, EPRI, CRIEPI, Framatome, and Consumers Power Co. at the Midland plant. Experimental results show that the CNIITMASH probe errors are a maximum of about 27 C (49 F) during a 15 C/hr (27 F/hr) heat-up but only about 3 C (5.4 F) (0.6%) during the hold portion at 470 C (878 F). These errors are much smaller than those obtained from a similar series of experiments performed by Sandia National Laboratories (Sandia). The discussion about uncertainties and errors shows that results presented as a temperature difference provides a measure of the probe error. Qualitative agreement is shown between the model predictions, the experimental results of the CNIITMASH probe and the experimental results of a series of similar experiments performed by Sandia

  10. The annealing temperature dependences of microstructures and magnetic properties in electro-chemical deposited CoNiFe thin films

    International Nuclear Information System (INIS)

    Suharyadi, Edi; Riyanto, Agus; Abraha, Kamsul

    2016-01-01

    CoNiFe thin films with various compositions had been successfully fabricated using electro-chemical deposition method. The crystal structure of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was fcc, bcc-fcc mix, and bcc, respectively. The difference crystal structure results the difference in magnetic properties. The saturation magnetic flux density (Bs) of Co_6_5Ni_1_5Fe_2_0, Co_6_2Ni_1_5Fe_2_3, and Co_5_5Ni_1_5Fe_3_0 thin films was 1.89 T, 1.93 T, and 2.05 T, respectively. An optimal annealing temperature was determined for controlling the microstructure and magnetic properties of CoNiFe thin films. Depending on annealing temperature, the ratio of bcc and fcc structure varied without changing the film composition. By annealing at temperature of T ≥ 350°C, the intensity ratio of X-ray diffraction peaks for bcc(110) to fcc(111) increased. The increase of phase ratio of bcc(110) to fcc(111) caused the increase of Bs, from 1.89 T to 1.95 T. Coercivity (Hc) also increased after annealing, from 2.6 Oe to 18.6 Oe for fcc phase thin films, from 2.0 Oe to 12.0 Oe for fcc-bcc mix phase thin films, and 7.8 Oe to 8 Oe for bcc phase thin films. The changing crystal structures during annealing process indicated that the thermal treatment at high temperature cause the changing crystallinity and atomic displacement. The TEM bright-field images with corresponding selected-area electron diffraction (SAED) patterns showed that there are strongly effects of thermal annealing on the size of fcc and bcc phase crystalline grain as described by size of individual spot and discontinuous rings. The size of crystalline grains increased by thermal annealing. The evolution of bcc and fcc structures of CoNiFe during annealing is though to be responsible for the change of magnetic properties.

  11. Reliability implications of defects in high temperature annealed Si/SiO2/Si structures

    International Nuclear Information System (INIS)

    Warren, W.L.; Fleetwood, D.M.; Shaneyfelt, M.R.; Winokur, P.S.; Devine, R.A.B.; Mathiot, D.; Wilson, I.H.; Xu, J.B.

    1994-01-01

    High-temperature post-oxidation annealing of poly-Si/SiO 2 /Si structures such as metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field effect transistors is known to result in enhanced radiation sensitivity, increased 1/f noise, and low field breakdown. The authors have studied the origins of these effects from a spectroscopic standpoint using electron paramagnetic resonance (EPR) and atomic force microscopy. One result of high temperature annealing is the generation of three types of paramagnetic defect centers, two of which are associated with the oxide close to the Si/SiO 2 interface (oxygen-vacancy centers) and the third with the bulk Si substrate (oxygen-related donors). In all three cases, the origin of the defects may be attributed to out-diffusion of O from the SiO 2 network into the Si substrate with associated reduction of the oxide. The authors present a straightforward model for the interfacial region which assumes the driving force for O out-diffusion is the chemical potential difference of the O in the two phases (SiO 2 and the Si substrate). Experimental evidence is provided to show that enhanced hole trapping and interface-trap and border-trap generation in irradiated high-temperature annealed Si/SiO 2 /Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies

  12. Effect of Annealing Temperature on the Water Contact Angle of PVD Hard Coatings.

    Science.gov (United States)

    Yang, Yu-Sen; Cho, Ting-Pin

    2013-08-07

    Various PVD (physical vapor deposition) hard coatings including nitrides and metal-doped diamond-like carbons (Me-DLC) were applied in plastic injection and die-casting molds to improve wear resistance and reduce sticking. In this study, nitrides hcp-AlN (hexagonal close-packed AlN), Cr₂N, (CrAl)₂N) and Me-DLC (Si-DLC and Cr-DLC) coatings were prepared using a closed field unbalanced magnetron reactive sputtering system. The coatings were annealed in air for 2 h at various temperatures, after which the anti-sticking properties were assessed using water contact angle (WCA) measurements. The as-deposited hcp-AlN, Cr₂N and (CrAl)₂N coatings exhibit hydrophobic behavior and exhibit respective WCAs of 119°, 106° and 101°. The as-deposited Si-DLC and Cr-DLC coatings exhibit hydrophilic behavior and exhibit respective WCAs of 74° and 88°. The annealed Cr₂N and (CrAl)₂N coatings exhibit hydrophobic behavior with higher WCAs, while the annealed hcp-AlN, Si-DLC and Cr-DLC coatings are hydrophilic. The increased WCA of the annealed Cr₂N and (CrAl)₂N coatings is related to their crystal structure and increased roughness. The decreased WCA of the annealed hcp-AlN, Si-DLC and Cr-DLC coatings is related to their crystal structures and has little correlation with roughness.

  13. Effects of deposition temperature and in-situ annealing time on structure and magnetic properties of (001) orientation FePt films

    International Nuclear Information System (INIS)

    Yu, Yongsheng; George, T.A.; Li, Haibo; Sun, Daqian; Ren, Zhenan; Sellmyer, D.J.

    2013-01-01

    FePt films were prepared on (100) oriented single crystal MgO substrates at high temperature ranging from 620 until 800 °C and in-situ annealed for different times ranging from 0 to 60 min to obtain ordered FePt films. The structural analysis indicates that FePt films grow epitaxially on MgO (100) substrates. Both increasing deposition temperature and in-situ annealing time enhance the (001) texture and ordering of FePt films. The magnetic analysis shows that these L1 0 FePt films have perpendicular anisotropy and the easy magnetization c-axis is perpendicular to the film plane. Magnetization reversal is controlled by a rotational mechanism. The hard magnetic properties of the films are improved with increasing deposition temperature or in-situ annealing time. - Highlights: ► The paper reports the texture and magnetic evolution of FePt films deposited on MgO substrates. ► Increasing deposition temperature or annealing time enhanced the texture and ordering. ► The magnetic analysis shows L1 0 FePt films have perpendicular anisotropy.

  14. Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Heo, J.H.; Shin, C.M. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-02-01

    ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 deg. C with the concentration of 0.3 M exhibits the best structural and optical properties.

  15. Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

    International Nuclear Information System (INIS)

    Hu, Yu-Min; Kuang, Chein-Hsiun; Han, Tai-Chun; Yu, Chin-Chung; Li, Sih-Sian

    2015-01-01

    In this work, we investigated the structural and magnetic properties of both as-deposited and post-annealed Cu-doped ZnO thin films for better understanding the possible mechanisms of room-temperature ferromagnetism (RT-FM) in ZnO-based diluted magnetic oxides. All of the films have a c-axis-oriented wurtzite structure and display RT-FM. X-ray photoelectron spectroscopy results showed that the incorporated Cu ions in as-deposited films are in 1+ valence state merely, while an additional 2+ valence state occurs in post-annealed films. The presence of Cu 2+ state in post-annealed film accompanies a higher magnetization value than that of as-deposited film and, in particular, the magnetization curves at 10 K and 300 K of the post-annealed film separate distinctly. Since Cu 1+ ion has a filled 3d band, the RT-FM in as-deposited Cu-doped ZnO thin films may stem solely from intrinsic defects, while that in post-annealed films is enhanced due to the presence of CuO crystallites

  16. Effects of Co layer thickness and annealing temperature on the magnetic properties of inverted [Pt/Co] multilayers

    International Nuclear Information System (INIS)

    Lee, Tae Young; Chan Won, Young; Su Son, Dong; Lee, Seong-Rae; Ho Lim, Sang

    2013-01-01

    The effects of Co layer thickness and annealing temperature on the perpendicular magnetic anisotropy (PMA) properties of inverted [Pt (0.2 nm)/Co (t Co )] 6 multilayers (where t Co indicates the thickness of the Co layer) have been investigated. The cross-sectional microstructure, as observed from the high-resolution transmission electron microscope images, shows a clear layered structure with atomically flat interfaces both in the as-deposited state as well as after annealing, indicating the interface effects for PMA. The effective PMA energy density (K eff ) increases significantly with an increase in t Co from 0.2 to 0.28 nm and then becomes almost saturated with further increases in t Co , followed by a slight reduction at the highest Co thickness, t Co  = 0.6 nm. In order to explain the t Co dependence on K eff , the intrinsic PMA energy density (K i ) is calculated by additionally measuring a similar set of results for the saturation magnetization. The K i value increases nearly linearly with the increase in t Co from 0.2 to 0.5 nm, followed by saturation at a higher t Co value of 0.6 nm. Owing to a close relationship between K i and the quality of the interfaces, these results indicate a similar t Co dependence on the quality of the interfaces. This is further supported from the magnetic measurements of the samples annealed at the highest temperature of 500 °C, where a second phase is formed, which show a similar t Co dependence on the amount of the second phase. The K i value is nearly independent of the annealing temperature at t Co  ≤ 0.4 nm, above which a substantial reduction is observed, when the annealing temperature exceeds 500 °C

  17. Low-temperature growth of aligned ZnO nanorods: effect of annealing gases on the structural and optical properties.

    Science.gov (United States)

    Umar, Ahmad; Hahn, Yoon-Bong; Al-Hajry, A; Abaker, M

    2014-06-01

    Aligned ZnO nanorods were grown on ZnO/Si substrate via simple aqueous solution process at low-temperature of - 65 degrees C by using zinc nitrate and hexamethylenetetramine (HMTA). The detailed morphological and structural properties measured by FESEM, XRD, EDS and TEM confirmed that the as-grown nanorods are vertically aligned, well-crystalline possessing wurtzite hexagonal phase and grown along the [0001] direction. The room-temperature photoluminescence spectrum of the grown nanorods exhibited a strong and broad green emission and small ultraviolet emission. The as-prepared ZnO nanorods were post-annealed in nitrogen (N2) and oxygen (O2) environments and further characterized in terms of their morphological, structural and optical properties. After annealing the nanorods exhibit well-crystallinity and wurtzite hexagonal phase. Moreover, by annealing the PL spectra show the enhancement in the UV emission and suppression in the green emission. The presented results demonstrate that simply by post-annealing process, the optical properties of ZnO nanostructures can be controlled.

  18. Effect of vacuum annealing and substrate temperature on structural and optical properties of ZnIn2Se4 thin films

    Science.gov (United States)

    El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

    2013-09-01

    Zinc indium selenide (ZnIn2Se4) thin films were prepared by the thermal evaporation technique with high deposition rate. The effect of thermal annealing in vacuum on the crystallinity of the as-deposited films was studied at different temperatures (523, 573 and 623 K). The effect of substrate temperature (623 K) for different thickness values (173, 250, 335 and 346 nm) on the optical parameters of ZnIn2Se4 was also studied. The structural studies showed nanocrystalline nature of the room temperature (300 K) deposited films with crystallite size of about a few nanometers. The crystallite size increased up to 31 nm with increasing the annealing temperature in vacuum. From the reflection and transmission data, the refractive index n and the extinction coefficient k were estimated for ZnIn2Se4 thin films and they were found to be independent of film thickness. Analysis of the absorption coefficient data of the as-deposited films revealed the existence of allowed direct and indirect transitions with optical energy gaps of 2.21 eV and 1.71 eV, respectively. These values decreased with increasing annealing temperature. At substrate temperature of 623 K, the direct band gap increased to 2.41 eV whereas the value of indirect band gap remained nearly unchanged. The dispersion analysis showed that the values of the oscillator energy Eo, dispersion energy Ed, dielectric constant at infinite frequency ε∞, and lattice dielectric constant εL were changed appreciably under the effect of annealing and substrate temperature. The covalent nature of structure was studied as a function of the annealing and substrate temperature using an empirical relation for the dispersion energy Ed. Generalized Miller's rule and linear refractive index were used to estimate the nonlinear susceptibility and nonlinear refractive index of the thin films.

  19. Annealing effects on the optical and morphological properties of ZnO nanorods on AZO substrate by using aqueous solution method at low temperature.

    Science.gov (United States)

    Hang, Da-Ren; Islam, Sk Emdadul; Sharma, Krishna Hari; Kuo, Shiao-Wei; Zhang, Cheng-Zu; Wang, Jun-Jie

    2014-01-01

    Vertically aligned ZnO nanorods (NRs) on aluminum-doped zinc oxide (AZO) substrates were fabricated by a single-step aqueous solution method at low temperature. In order to optimize optical quality, the effects of annealing on optical and structural properties were investigated by scanning electron microscopy, X-ray diffraction, photoluminescence (PL), and Raman spectroscopy. We found that the annealing temperature strongly affects both the near-band-edge (NBE) and visible (defect-related) emissions. The best characteristics have been obtained by employing annealing at 400°C in air for 2 h, bringing about a sharp and intense NBE emission. The defect-related recombinations were also suppressed effectively. However, the enhancement decreases with higher annealing temperature and prolonged annealing. PL study indicates that the NBE emission is dominated by radiative recombination associated with hydrogen donors. Thus, the enhancement of NBE is due to the activation of radiative recombinations associated with hydrogen donors. On the other hand, the reduction of visible emission is mainly attributed to the annihilation of OH groups. Our results provide insight to comprehend annealing effects and an effective way to improve optical properties of low-temperature-grown ZnO NRs for future facile device applications.

  20. X-Ray diffraction analysis of thermally evaporated copper tin selenide thin films at different annealing temperature

    International Nuclear Information System (INIS)

    Mohd Amirul Syafiq Mohd Yunos; Zainal Abidin Talib; Wan Mahmood Mat Yunus; Josephine Liew Ying Chyi; Wilfred Sylvester Paulus

    2010-01-01

    Semiconductor thin films Copper Tin Selenide, Cu 2 SnSe 3 , a potential compound for semiconductor radiation detector or solar cell applications were prepared by thermal evaporation method onto well-cleaned glass substrates. The as-deposited films were annealed in flowing purified nitrogen, N 2 , for 2 hours in the temperature range from 100 to 500 degree Celsius. The structure of as-deposited and annealed films has been studied by X-ray diffraction technique. The semi-quantitative analysis indicated from the Reitveld refinement show that the samples composed of Cu 2 SnSe 3 and SnSe. These studies revealed that the films were structured in mixed phase between cubic space group F-43 m (no. 216) and orthorhombic space group P n m a (no. 62). The crystallite size and lattice strain were determined from Scherrer calculation method. The results show that increasing in annealing temperature resulted in direct increase in crystallite size and decrease in lattice strain. (author)

  1. Extrapolation of zircon fission-track annealing models

    International Nuclear Information System (INIS)

    Palissari, R.; Guedes, S.; Curvo, E.A.C.; Moreira, P.A.F.P.; Tello, C.A.; Hadler, J.C.

    2013-01-01

    One of the purposes of this study is to give further constraints on the temperature range of the zircon partial annealing zone over a geological time scale using data from borehole zircon samples, which have experienced stable temperatures for ∼1 Ma. In this way, the extrapolation problem is explicitly addressed by fitting the zircon annealing models with geological timescale data. Several empirical model formulations have been proposed to perform these calibrations and have been compared in this work. The basic form proposed for annealing models is the Arrhenius-type model. There are other annealing models, that are based on the same general formulation. These empirical model equations have been preferred due to the great number of phenomena from track formation to chemical etching that are not well understood. However, there are two other models, which try to establish a direct correlation between their parameters and the related phenomena. To compare the response of the different annealing models, thermal indexes, such as closure temperature, total annealing temperature and the partial annealing zone, have been calculated and compared with field evidence. After comparing the different models, it was concluded that the fanning curvilinear models yield the best agreement between predicted index temperatures and field evidence. - Highlights: ► Geological data were used along with lab data for improving model extrapolation. ► Index temperatures were simulated for testing model extrapolation. ► Curvilinear Arrhenius models produced better geological temperature predictions

  2. Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering

    International Nuclear Information System (INIS)

    Sun Li-Jie; He Dong-Kai; Xu Xiao-Qiu; Zhong Ze; Wu Xiao-Peng; Lin Bi-Xia; Fu Zhu-Xi

    2010-01-01

    We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100°C in N 2 and in O 2 ambient become n-type and p-type, respectively. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photolumi-nescence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100°C in N 2 ambient, and these defects play an important role for n-type conductivity of ZnO. While the ZnO films annealed at 1100°C in O 2 ambient, the oxygen antisite contributes ZnO films to p-type. (condensed matter: structure, mechanical and thermal properties)

  3. The influence of annealing temperature and time on the efficiency of pentacene: PTCDI organic solar cells

    Directory of Open Access Journals (Sweden)

    Mehmet Biber

    Full Text Available In this study, fabrication of a polycyclic aromatic hydrocarbon/Perylene Tetracarboxylic Di-Imide (PTCDI, donor/acceptor solar cells are presented using physical vapour deposition technique in a 1000 class glove box. An ITO/PEDOT:PSS/Pentacene/PTCDI/Al (ITO = Indium Tin Oxide and PEDOT:PSS = poly(3,4-ethylenedioxythiophene polystyrene sulfonate solar cell has been obtained and the power conversion efficiency, PCE (η of about 0.33% has been obtained under simulated solar illumination of 300 W/m2. Furthermore, the effects of annealing temperatures (at 100 and 150 °C and of annealing (at 100 °C times for 5 and 10 min. on the power conversion efficiency, η of the solar cells have also been investigated. In general, it has been seen that the thermal annealing deteriorated the characteristics parameters of Pentacene/PTCDI solar cell such that both fill factor, FF and η decreased after annealing and with increase of annealing time. Atomic force microscopy (AFM images showed that the phase segregation and grain size increased and the surface roughness of Pentacene film decreased and these effects reduced the η value. The η values of the solar cell have been determined as 0.33%, 0.12% and 0.06% for pre-annealing, annealing at 100 and 150 °C, respectively. Keywords: Organic solar cells, PTCDI, Pentacene, Annealing

  4. Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

    NARCIS (Netherlands)

    Seshan, V.; Ullien, D.; Castellanos-Gomez, A.; Sachdeva, S.; Murthy, D.H.K.; Savenije, T.J.; Ahmad, H.A.; Nunney, T.S.; Janssens, S.D.; Haenen, K.; Nesládek, M.; Van der Zant, H.S.J.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

    2013-01-01

    A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at

  5. Damage annealing in low temperature Fe/Mn implanted ZnO

    International Nuclear Information System (INIS)

    Gunnlaugsson, H. P.; Bharuth-Ram, K.; Johnston, K.; Langouche, G.; Mantovan, R.; Mølholt, T. E.; Naidoo, D.; Ólafsson, O.; Weyer, G.

    2015-01-01

    57 Fe Emission Mössbauer spectra obtained after low fluence (<10 12 cm −2 ) implantation of 57 Mn (T 1/2 = 1.5 min.) into ZnO single crystal held at temperatures below room temperature (RT) are presented. The spectra can be analysed in terms of four components due to Fe 2+ and Fe 3+ on Zn sites, interstitial Fe and Fe in damage regions (Fe D ). The Fe D component is found to be indistinguishable from similar component observed in emission Mössbauer spectra of higher fluence (∼10 15 cm −2 ) 57 Fe/ 57 Co implanted ZnO and 57 Fe implanted ZnO, demonstrating that the nature of the damage regions in the two types of experiments is similar. The defect component observed in the low temperature regime was found to anneal below RT

  6. Effect of Annealing Temperature on the Corrosion Protection of Hot Swaged Ti-54M Alloy in 2 M HCl Pickling Solutions

    Directory of Open Access Journals (Sweden)

    El-Sayed M. Sherif

    2017-01-01

    Full Text Available The corrosion of Ti-54M titanium alloy processed by hot rotary swaging and post-annealed to yield different grain sizes, in 2 M HCl solutions is reported. Two annealing temperatures of 800 °C and 940 °C, followed by air cooling and furnace cooling were used to give homogeneous grain structures of 1.5 and 5 μm, respectively. It has been found that annealing the alloy at 800 °C decreased the corrosion of the alloy, with respect to the hot swaged condition, through increasing its corrosion resistance and decreasing the corrosion current and corrosion rate. Increasing the annealing temperature to 940 °C further decreased the corrosion of the alloy.

  7. Annealing behavior of alpha recoil tracks in phlogopite

    International Nuclear Information System (INIS)

    Gao Shaokai; Yuan Wanming; Dong Jinquan; Bao Zengkuan

    2005-01-01

    Alpha recoil tracks (ARTs) formed during the a-decay of U, Th as well as their daughter nuclei are used as a new dating method which is to some extent a complementarity of fission track dating due to its ability to determine the age of young mineral. ARTs can be observable under phase-contrast interference microscope through chemical etching. In order to study the annealing behavior of ARTs in phlogopite, two methods of annealing experiments were executed. Samples were annealed in the electronic tube furnace at different temperatures ranging from 250 degree C to 450 degree C in steps of 50 degree C. For any given annealing temperature, different annealing times were used until total track fading were achieved. It is found that ARTs anneal much more easily than fission tracks, the annealing ratio increase non-linearly with annealing time and temperature. Using the Arrhenius plot, an activation energy of 0.68ev is finally found for 100% removal of ARTs, which is less than the corresponding value for fission tracks (FTs). Through extending the annealing time to geological time, a much lower temperature range of the sample's cooling history can be got.

  8. [Effect of annealing temperature on the crystallization and spectroscopic response of a small-molecule semiconductor doped in polymer film].

    Science.gov (United States)

    Yin, Ming; Zhang, Xin-Ping; Liu, Hong-Mei

    2012-11-01

    The crystallization properties of the perylene (EPPTC) molecules doped in the solid film of the derivative of polyfluorene (F8BT) at different annealing temperatures, as well as the consequently induced spectroscopic response of the exciplex emission in the heterojunction structures, were studied in the present paper. Experimental results showed that the phase separation between the small and the polymer molecules in the blend film is enhanced with increasing the annealing temperature, which leads to the crystallization of the EPPTC molecules due to the strong pi-pi stacking. The size of the crystal phase increases with increasing the annealing temperature. However, this process weakens the mechanisms of the heterojunction configuration, thus, the total interfacial area between the small and the polymer molecules and the amount of exciplex are reduced significantly in the blend film. Meanwhile, the energy transfer from the polymer to the small molecules is also reduced. As a result, the emission from the exciplex becomes weaker with increasing the annealing temperature, whereas the stronger emission from the polymer molecules and from the crystal phase of the small molecules can be observed. These experimental results are very important for understanding and tailoring the organic heterojunction structures. Furthermore, this provides photophysics for improving the performance of photovoltaic or solar cell devices.

  9. Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

    Science.gov (United States)

    Vinattieri, A.; Batignani, F.; Bogani, F.; Meneghini, M.; Meneghesso, G.; Zanoni, E.; Zhu, D.; Humphreys, C. J.

    2014-02-01

    By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.

  10. Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

    Energy Technology Data Exchange (ETDEWEB)

    Vinattieri, A.; Batignani, F. [Dipartimento di Fisica e Astronomia, LENS, CNISM, Università di Firenze (Italy); Bogani, F. [Dipartimento di Ingegneria Industriale, Università di Firenze (Italy); Meneghini, M.; Meneghesso, G.; Zanoni, E. [Dipartimento di Ingegneria dell' Informazione, Università di Padova (Italy); Zhu, D.; Humphreys, C. J. [Department Materials Science, University of Cambridge, Cambridge, CB2 3QZ (United Kingdom)

    2014-02-21

    By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.

  11. Effect of Annealing Temperature on the Water Contact Angle of PVD Hard Coatings

    Science.gov (United States)

    Yang, Yu-Sen; Cho, Ting-Pin

    2013-01-01

    Various PVD (physical vapor deposition) hard coatings including nitrides and metal-doped diamond-like carbons (Me-DLC) were applied in plastic injection and die-casting molds to improve wear resistance and reduce sticking. In this study, nitrides hcp-AlN (hexagonal close-packed AlN), Cr2N, (CrAl)2N) and Me-DLC (Si-DLC and Cr-DLC) coatings were prepared using a closed field unbalanced magnetron reactive sputtering system. The coatings were annealed in air for 2 h at various temperatures, after which the anti-sticking properties were assessed using water contact angle (WCA) measurements. The as-deposited hcp-AlN, Cr2N and (CrAl)2N coatings exhibit hydrophobic behavior and exhibit respective WCAs of 119°, 106° and 101°. The as-deposited Si-DLC and Cr-DLC coatings exhibit hydrophilic behavior and exhibit respective WCAs of 74° and 88°. The annealed Cr2N and (CrAl)2N coatings exhibit hydrophobic behavior with higher WCAs, while the annealed hcp-AlN, Si-DLC and Cr-DLC coatings are hydrophilic. The increased WCA of the annealed Cr2N and (CrAl)2N coatings is related to their crystal structure and increased roughness. The decreased WCA of the annealed hcp-AlN, Si-DLC and Cr-DLC coatings is related to their crystal structures and has little correlation with roughness. PMID:28811440

  12. In situ TEM and synchrotron characterization of U–10Mo thin specimen annealed at the fast reactor temperature regime

    International Nuclear Information System (INIS)

    Yun, Di; Mo, Kun; Mohamed, Walid; Ye, Bei; Kirk, Marquis A.; Baldo, Peter; Xu, Ruqing; Yacout, Abdellatif M.

    2015-01-01

    U–Mo metallic alloys have been extensively used for the Reduced Enrichment for Research and Test Reactors (RERTR) program, which is now known as the Office of Material Management and Minimization under the Conversion Program. This fuel form has also recently been proposed as fast reactor metallic fuels in the recent DOE Ultra-high Burnup Fast Reactor project. In order to better understand the behavior of U–10Mo fuels within the fast reactor temperature regime, a series of annealing and characterization experiments have been performed. Annealing experiments were performed in situ at the Intermediate Voltage Electron Microscope (IVEM-Tandem) facility at Argonne National Laboratory (ANL). An electro-polished U–10Mo alloy fuel specimen was annealed in situ up to 700 °C. At an elevated temperature of about 540 °C, the U–10Mo specimen underwent a relatively slow microstructure transition. Nano-sized grains were observed to emerge near the surface. At the end temperature of 700 °C, the near-surface microstructure had evolved to a nano-crystalline state. In order to clarify the nature of the observed microstructure, Laue diffraction and powder diffraction experiments were carried out at beam line 34-ID of the Advanced Photon Source (APS) at ANL. Phases present in the as-annealed specimen were identified with both Laue diffraction and powder diffraction techniques. The U–10Mo was found to recrystallize due to thermally-induced recrystallization driven by a high density of pre-existing dislocations. A separate in situ annealing experiment was carried out with a Focused Ion Beam processed (FIB) specimen. A similar microstructure transition occurred at a lower temperature of about 460 °C with a much faster transition rate compared to the electro-polished specimen. - Highlights: • TEM annealing experiments were performed in situ at the IVEM facility up to fast reactor temperature. • At 540 °C, the U-10Mo specimen underwent a slow microstructure transition

  13. In situ TEM and synchrotron characterization of U–10Mo thin specimen annealed at the fast reactor temperature regime

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Di, E-mail: diyun1979@xjtu.edu.cn [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States); Xi' an Jiao Tong University, 28 Xian Ning West Road, Xi' an 710049 (China); Mo, Kun; Mohamed, Walid; Ye, Bei; Kirk, Marquis A.; Baldo, Peter; Xu, Ruqing; Yacout, Abdellatif M. [Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States)

    2015-12-15

    U–Mo metallic alloys have been extensively used for the Reduced Enrichment for Research and Test Reactors (RERTR) program, which is now known as the Office of Material Management and Minimization under the Conversion Program. This fuel form has also recently been proposed as fast reactor metallic fuels in the recent DOE Ultra-high Burnup Fast Reactor project. In order to better understand the behavior of U–10Mo fuels within the fast reactor temperature regime, a series of annealing and characterization experiments have been performed. Annealing experiments were performed in situ at the Intermediate Voltage Electron Microscope (IVEM-Tandem) facility at Argonne National Laboratory (ANL). An electro-polished U–10Mo alloy fuel specimen was annealed in situ up to 700 °C. At an elevated temperature of about 540 °C, the U–10Mo specimen underwent a relatively slow microstructure transition. Nano-sized grains were observed to emerge near the surface. At the end temperature of 700 °C, the near-surface microstructure had evolved to a nano-crystalline state. In order to clarify the nature of the observed microstructure, Laue diffraction and powder diffraction experiments were carried out at beam line 34-ID of the Advanced Photon Source (APS) at ANL. Phases present in the as-annealed specimen were identified with both Laue diffraction and powder diffraction techniques. The U–10Mo was found to recrystallize due to thermally-induced recrystallization driven by a high density of pre-existing dislocations. A separate in situ annealing experiment was carried out with a Focused Ion Beam processed (FIB) specimen. A similar microstructure transition occurred at a lower temperature of about 460 °C with a much faster transition rate compared to the electro-polished specimen. - Highlights: • TEM annealing experiments were performed in situ at the IVEM facility up to fast reactor temperature. • At 540 °C, the U-10Mo specimen underwent a slow microstructure transition

  14. Improved amorphous/crystalline silicon interface passivation for heterojunction solar cells by low-temperature chemical vapor deposition and post-annealing treatment.

    Science.gov (United States)

    Wang, Fengyou; Zhang, Xiaodan; Wang, Liguo; Jiang, Yuanjian; Wei, Changchun; Xu, Shengzhi; Zhao, Ying

    2014-10-07

    In this study, hydrogenated amorphous silicon (a-Si:H) thin films are deposited using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) system. The Si-H configuration of the a-Si:H/c-Si interface is regulated by optimizing the deposition temperature and post-annealing duration to improve the minority carrier lifetime (τeff) of a commercial Czochralski (Cz) silicon wafer. The mechanism of this improvement involves saturation of the microstructural defects with hydrogen evolved within the a-Si:H films due to the transformation from SiH2 into SiH during the annealing process. The post-annealing temperature is controlled to ∼180 °C so that silicon heterojunction solar cells (SHJ) could be prepared without an additional annealing step. To achieve better performance of the SHJ solar cells, we also optimize the thickness of the a-Si:H passivation layer. Finally, complete SHJ solar cells are fabricated using different temperatures for the a-Si:H film deposition to study the influence of the deposition temperature on the solar cell parameters. For the optimized a-Si:H deposition conditions, an efficiency of 18.41% is achieved on a textured Cz silicon wafer.

  15. Synthesis of stable TiO2 nanotubes: effect of hydrothermal treatment, acid washing and annealing temperature.

    Science.gov (United States)

    López Zavala, Miguel Ángel; Lozano Morales, Samuel Alejandro; Ávila-Santos, Manuel

    2017-11-01

    Effect of hydrothermal treatment, acid washing and annealing temperature on the structure and morphology of TiO 2 nanotubes during the formation process was assessed. X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy analysis were conducted to describe the formation and characterization of the structure and morphology of nanotubes. Hydrothermal treatment of TiO 2 precursor nanoparticles and acid washing are fundamental to form and define the nanotubes structure. Hydrothermal treatment causes a change in the crystallinity of the precursor nanoparticles from anatase phase to a monoclinic phase, which characterizes the TiO 2 nanosheets structure. The acid washing promotes the formation of high purity nanotubes due to Na + is exchanged from the titanate structure to the hydrochloric acid (HCl) solution. The annealing temperature affects the dimensions, structure and the morphology of the nanotubes. Annealing temperatures in the range of 400 °C and 600 °C are optimum to maintain a highly stable tubular morphology of nanotubes. Additionally, nanotubes conserve the physicochemical properties of the precursor Degussa P25 nanoparticles. Temperatures greater than 600 °C alter the morphology of nanotubes from tubular to an irregular structure of nanoparticles, which are bigger than those of the precursor material, i.e., the crystallinity turn from anatase phase to rutile phase inducing the collapse of the nanotubes.

  16. Annealing effect reversal by water sorption-desorption and heating above the glass transition temperature-comparison of properties.

    Science.gov (United States)

    Saxena, A; Jean, Y C; Suryanarayanan, R

    2013-08-05

    Our objective is to compare the physical properties of materials obtained from two different methods of annealing reversal, that is, water sorption-desorption (WSD) and heating above glass transition temperature (HAT). Trehalose was annealed by storing at 100 °C for 120 h. The annealing effect was reversed either by WSD or HAT, and the resulting materials were characterized by differential scanning calorimetry (DSC), water sorption studies, and positron annihilation spectroscopy (PAS). While the products obtained by the two methods of annealing reversal appeared to be identical by conventional characterization methods, they exhibited pronounced differences in their water sorption behavior. Positron annihilation spectroscopy (PAS), by measuring the fractional free volume changes in the processed samples, provided a mechanistic explanation for the differences in the observed behavior.

  17. Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

    International Nuclear Information System (INIS)

    Chao, D.S.; Liang, J.H.

    2013-01-01

    Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

  18. Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices

    International Nuclear Information System (INIS)

    Lee, Seung Moo; Won, Jaihyung; Yim, Soyoung; Park, Se Jun; Choi, Jongsik; Kim, Jeongtae; Lee, Hyeondeok; Byun, Dongjin

    2012-01-01

    The effect of deposition and thermal annealing temperatures on the dry etch rate of a-C:H films was investigated to increase our fundamental understanding of the relationship between thermal annealing and dry etch rate and to obtain a low dry etch rate hard mask. The hydrocarbon contents and hydrogen concentration were decreased with increasing deposition and annealing temperatures. The I(D)/I(G) intensity ratio and extinction coefficient of the a-C:H films were increased with increasing deposition and annealing temperatures because of the increase of sp 2 bonds in the a-C:H films. There was no relationship between the density of the unpaired electrons and the deposition temperature, or between the density of the unpaired electrons and the annealing temperature. However, the thermally annealed a-C:H films had fewer unpaired electrons compared with the as-deposited ones. Transmission electron microscopy analysis showed the absence of any crystallographic change after thermal annealing. The density of the as-deposited films was increased with increasing deposition temperature. The density of the 600 °C annealed a-C:H films deposited under 450 °C was decreased but at 550 °C was increased, and the density of all 800 °C annealed films was increased. The dry etch rate of the as-deposited a-C:H films was negatively correlated with the deposition temperature. The dry etch rate of the 600 °C annealed a-C:H films deposited at 350 °C and 450 °C was faster than that of the as-deposited film and that of the 800 °C annealed a-C:H films deposited at 350 °C and 450 °C was 17% faster than that of the as-deposited film. However, the dry etch rate of the 550 °C deposited a-C:H film was decreased after annealing at 600 °C and 800 °C. The dry etch rate of the as-deposited films was decreased with increasing density but that of the annealed a-C:H films was not. These results indicated that the dry etch rate of a-C:H films for dry etch hard masks can be further decreased by

  19. Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

    Science.gov (United States)

    Lim, Chul; Oh, Ji Young; Koo, Jae Bon; Park, Chan Woo; Jung, Soon-Won; Na, Bock Soon; Chu, Hye Yong

    2014-11-01

    Flexible oxide thin-film transistors (Oxide-TFTs) have emerged as next generation transistors because of their applicability in electronic device. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. A low-temperature process to improve the performance of solution-processed n-channel ZnO thin-film transistors (TFTs) fabricated via spin-coating and inkjet-printing is introduced here. ZnO nanoparticles were synthesized using a facile sonochemical method that was slightly modified based on a previously reported method. The influence of the annealing atmosphere on both nanoparticle-based TFT devices fabricated via spin-coating and those created via inkjet printing was investigated. For the inkjet-printed TFTs, the characteristics were improved significantly at an annealing temperature of 150 degrees C. The field effect mobility, V(th), and the on/off current ratios were 3.03 cm2/Vs, -3.3 V, and 10(4), respectively. These results indicate that annealing at 150 degrees C 1 h is sufficient to obtain a mobility (μ(sat)) as high as 3.03 cm2/Vs. Also, the active layer of the solution-based ZnO nanoparticles allowed the production of high-performance TFTs for low-cost, large-area electronics and flexible devices.

  20. Dependences of the Al thickness and annealing temperature on the structural, optical and electrical properties in ZnO/Al multilayers

    International Nuclear Information System (INIS)

    Hu, Y.M.; Lin, C.W.; Huang, J.C.A.

    2006-01-01

    High-quality (0001) oriented ZnO (300 A) film and [ZnO(100 A)/Al(t Al )] 3 (t Al = 0.6, 1.7, 2.8 A) multilayers have been established at room temperature on Al 2 O 3 (0001) substrates by ion-beam sputtering. The structural, optical and electrical properties of multilayers as functions of both the Al thickness and annealing temperature are reported. We have verified that Al thickness and annealing temperature are the key factors to optimize transparency-conducting property in ZnO/Al multilayers. The optimum Al thickness and annealing temperature for ZnO/Al multilayer of 300 A thin is 1.7 A (about one Al atomic layer) and 400 deg. C, respectively, leading to the relatively lower resistivity (2.8 x 10 -3 Ω cm) and higher Hall mobility (10 cm 2 /V.s) without suppression of the visible transmittance (above 85%)

  1. Annealing-induced Ge/Si(100) island evolution

    International Nuclear Information System (INIS)

    Zhang Yangting; Drucker, Jeff

    2003-01-01

    Ge/Si(100) islands were found to coarsen during in situ annealing at growth temperature. Islands were grown by molecular-beam epitaxy of pure Ge and annealed at substrate temperatures of T=450, 550, 600, and 650 deg. C, with Ge coverages of 6.5, 8.0, and 9.5 monolayers. Three coarsening mechanisms operate in this temperature range: wetting-layer consumption, conventional Ostwald ripening, and Si interdiffusion. For samples grown and annealed at T=450 deg. C, consumption of a metastably thick wetting layer causes rapid initial coarsening. Slower coarsening at longer annealing times occurs by conventional Ostwald ripening. Coarsening of samples grown and annealed at T=550 deg. C occurs via a combination of Si interdiffusion and conventional Ostwald ripening. For samples grown and annealed at T≥600 deg. C, Ostwald ripening of SiGe alloy clusters appears to be the dominant coarsening mechanism

  2. Calculation of temperature fields formed in induction annealing of closing welded joint of jacket of steam generator for WWER 440 type nuclear power plant using ICL 2960 computer

    International Nuclear Information System (INIS)

    Sajnar, P.; Fiala, J.

    1983-01-01

    The problems are discussed of the mathematical description and simulation of temperature fields in annealing the closing weld of the steam generator jacket of the WWER 440 nuclear power plant. The basic principles are given of induction annealing, the method of calculating temperature fields is indicated and the mathematical description is given of boundary conditions on the outer and inner surfaces of the steam generator jacket for the computation of temperature fields arising during annealing. Also described are the methods of determining the temperature of exposed parts of heat exchange tubes inside the steam generator and the technical possibilities are assessed of the annealing equipment from the point of view of its computer simulation. Five alternatives are given for the computation of temperature fields in the area around the weld for different boundary conditions. The values are given of maximum differences in the temperatures of the metal in the annealed part of the steam generator jacket which allow the assessment of individual computation variants, this mainly from the point of view of observing the course of annealing temperature in the required width of the annealed jacket of the steam generator along both sides of the closing weld. (B.S.)

  3. Effect of Elevated Temperature Annealing on Nafion/SiO2 Composite Membranes for the All-Vanadium Redox Flow Battery

    Directory of Open Access Journals (Sweden)

    Sixiu Zeng

    2018-04-01

    Full Text Available Conducting Nafion/SiO2 composite membranes were successfully prepared using a simple electrostatic self-assembly method, followed by annealing at elevated temperatures of 240, 270, and 300 °C. Membrane performance was then investigated in vanadium redox flow batteries (VRB. These annealed composite membranes demonstrated lower vanadium permeability and a better selectivity coefficient than pure Nafion membranes. The annealing temperature of 270 °C created the highest proton conductivity in the Nafion/SiO2 composite membranes. The microstructures of these membranes were analyzed using transmission electron microscopy, small-angle X-ray scattering, and positron annihilation lifetime spectroscopy. This study revealed that exposure to high temperatures resulted in an increase in the free volumes of the composite membranes, resulting in improved mechanical and chemical behavior, with the single cell system containing composite membranes performing better than systems containing pure Nafion membranes.

  4. Effect of high-temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGe. M.S. Thesis

    Science.gov (United States)

    Draper, Susan L.

    1987-01-01

    Annealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.

  5. Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

    Science.gov (United States)

    Nag, Jadupati; Ray, Nirat

    2018-05-01

    Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

  6. Processing of fine grained AISI 304L austenitic stainless steel by cold rolling and high-temperature short-term annealing

    Science.gov (United States)

    Naghizadeh, Meysam; Mirzadeh, Hamed

    2018-05-01

    An advanced thermomechanical process based on the formation and reversion of deformation-induced martensite was used to refine the grain size and enhance the hardness of an AISI 304L austenitic stainless steel. Both low and high reversion annealing temperatures and also the repetition of the whole thermomechanical cycle were considered. While a microstructure with average austenite grain size of a few micrometers was achieved based on cold rolling and high-temperature short-term annealing, an extreme grain refinement up to submicrometer regime was obtained by cold rolling followed by low-temperature long-term annealing. However, the required annealing time was found to be much longer, which negates its appropriateness for industrial production. While a magnificent grain refinement was achieved by one pass of the high-temperature thermomechanical process, the reduction in grain size was negligible by the repetition of the whole cycle. It was found that the hardness of the thermomechanically processed material is much higher than that of the as-received material. The results of the present work were shown to be compatible with the general trend of grain size dependence of hardness for AISI 304L stainless steel based on the Hall-Petch relationship. The results were also discussed based on the X-ray evaluation of dislocation density by modified Williamson-Hall plots.

  7. Corrosion resistance of duplex stainless steel subjected to long-term annealing in the spinodal decomposition temperature range

    International Nuclear Information System (INIS)

    Lo, K.H.; Kwok, C.T.; Chan, W.K.; Zeng, D.

    2012-01-01

    Highlights: ► Long-term DLEPR data on duplex stainless steel. ► Spinodal decomposition remains unabated even after 15,000 h of annealing. ► Effect of long-term annealing on healing has been investigated. - Abstract: The effect of thermal annealing up to 15,000 h between 300 °C and 500 °C on the corrosion resistance of the duplex stainless steel (DSS) 7MoPLUS has been investigated by using the DLEPR test. Spinodal decomposition in 7MoPLUS is unabated even after annealing for 15,000 h and no healing has been observed. The possible healing mechanisms in this temperature range (back diffusion of Cr atoms from the Cr-rich ferrite (α Cr ) and diffusion of Cr atoms from the austenite) and its absence in the present steel have been discussed.

  8. Effect of nitrogen addition and annealing temperature on superelastic properties of Ti-Nb-Zr-Ta alloys

    Energy Technology Data Exchange (ETDEWEB)

    Tahara, Masaki [Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Kim, Hee Young, E-mail: heeykim@ims.tsukuba.ac.jp [Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Hosoda, Hideki [Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Nam, Tae-hyun [School of Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processingnd ERI, Gyeongsang National University, 900 Gazwadong, Jinju, Gyeongnam 660-701 (Korea, Republic of); Miyazaki, Shuichi, E-mail: miyazaki@ims.tsukuba.ac.jp [Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); School of Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processingnd ERI, Gyeongsang National University, 900 Gazwadong, Jinju, Gyeongnam 660-701 (Korea, Republic of)

    2010-10-15

    Research highlights: In this study, the effects of composition and annealing temperature on microstructure, shape memory effect and superelastic properties were investigated in Ti-Nb-4Zr-2Ta-N alloys by measuring stress-strain curves at various temperatures and using transmission electron microscopy. Dissolution of {alpha} phase increases M{sub s} and decreases the critical stress for slip for the Ti-22Nb-4Zr-2Ta alloy while it causes the decrease of M{sub s} and the increase of the critical stress for slip for the Ti-20Nb-4Zr-2Ta-0.6N alloy. The different effect of dissolution of {alpha} phase can be attributed to the fact that N is absorbed in {alpha} phase. - Abstract: The composition dependence of the mechanical properties and martensitic transformation behavior of Ti-Nb-4Zr-2Ta-N alloys is investigated. The effect of annealing temperature on the microstructural evolution and superelastic properties in the N-added and N-free alloys is compared. The addition of N decreases M{sub s} of Ti-Nb-4Zr-2Ta alloys by about 200 K per 1 at.%N and improves the superelastic properties of Ti-Nb-4Zr-2Ta alloys. The dissolution of {alpha} phase increases the martensitic transformation start temperature and decreases the superelastic recovery strain for the N-free alloy, whereas it causes opposite effects for the N-added alloy. The different annealing temperature dependences of superelastic properties are discussed on the basis of microstructure observation.

  9. Effect of nitrogen addition and annealing temperature on superelastic properties of Ti-Nb-Zr-Ta alloys

    International Nuclear Information System (INIS)

    Tahara, Masaki; Kim, Hee Young; Hosoda, Hideki; Nam, Tae-hyun; Miyazaki, Shuichi

    2010-01-01

    Research highlights: In this study, the effects of composition and annealing temperature on microstructure, shape memory effect and superelastic properties were investigated in Ti-Nb-4Zr-2Ta-N alloys by measuring stress-strain curves at various temperatures and using transmission electron microscopy. Dissolution of α phase increases M s and decreases the critical stress for slip for the Ti-22Nb-4Zr-2Ta alloy while it causes the decrease of M s and the increase of the critical stress for slip for the Ti-20Nb-4Zr-2Ta-0.6N alloy. The different effect of dissolution of α phase can be attributed to the fact that N is absorbed in α phase. - Abstract: The composition dependence of the mechanical properties and martensitic transformation behavior of Ti-Nb-4Zr-2Ta-N alloys is investigated. The effect of annealing temperature on the microstructural evolution and superelastic properties in the N-added and N-free alloys is compared. The addition of N decreases M s of Ti-Nb-4Zr-2Ta alloys by about 200 K per 1 at.%N and improves the superelastic properties of Ti-Nb-4Zr-2Ta alloys. The dissolution of α phase increases the martensitic transformation start temperature and decreases the superelastic recovery strain for the N-free alloy, whereas it causes opposite effects for the N-added alloy. The different annealing temperature dependences of superelastic properties are discussed on the basis of microstructure observation.

  10. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO2 matrix

    International Nuclear Information System (INIS)

    Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

    2015-01-01

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO 2 matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO 2 is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters

  11. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

    2015-07-28

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  12. Optical scattering characteristic of annealed niobium oxide films

    International Nuclear Information System (INIS)

    Lai Fachun; Li Ming; Wang Haiqian; Hu Hailong; Wang Xiaoping; Hou, J.G.; Song Yizhou; Jiang Yousong

    2005-01-01

    Niobium oxide (Nb 2 O 5 ) films with thicknesses ranging from 200 to 1600 nm were deposited on fused silica at room temperature by low frequency reactive magnetron sputtering system. In order to study the optical losses resulting from the microstructures, the films with 500 nm thickness were annealed at temperatures between 600 and 1100 deg. C, and films with thicknesses from 200 to 1600 nm were annealed at 800 deg. C. Scanning electron microscopy and atomic force microscopy images show that the root mean square of surface roughness, the grain size, voids, microcracks, and grain boundaries increase with increasing both the annealing temperature and the thickness. Correspondingly, the optical transmittance and reflectance decrease, and the optical loss increases. The mechanisms of the optical losses are discussed. The results suggest that defects in the volume and the surface roughness should be the major source for the optical losses of the annealed films by causing pronounced scattering. For samples with a determined thickness, there is a critical annealing temperature, above which the surface scattering contributes to the major optical losses. In the experimental scope, for the films annealed at temperatures below 900 deg. C, the major optical losses resulted from volume scattering. However, surface roughness was the major source for the optical losses when the 500-nm films were annealed at temperatures above 900 deg. C

  13. Effect of annealing temperature on a single step processed Cu{sub 2}ZnSnS{sub 4} thin film via solution method

    Energy Technology Data Exchange (ETDEWEB)

    Prabeesh, P.; Selvam, I. Packia; Potty, S.N.

    2016-05-01

    Cu{sub 2}ZnSnS{sub 4} (CZTS) is a promising material for thin film solar cell applications because of its excellent photovoltaic properties, high abundance and non-toxicity. Thin films of CZTS are generally fabricated by vacuum based techniques or by using toxic solvents and these routes reduce its attention as a low cost and environmental friendly material. In this study, we have prepared CZTS through a solution based single step approach using non-toxic chemicals by spin coating and studied the effect of annealing temperature in the range 350–550 °C in nitrogen atmosphere on structural, optical and electrical properties. XRD results revealed the formation of kesterite phase at all annealing temperatures, while the Raman studies indicated Cu{sub 2}SnS{sub 2} impurity phase in the film annealed at 550 °C. Band gap of the films annealed in nitrogen varies from 1.46 eV to 1.56 eV, depending on the annealing temperature. Optimum properties, such as, good crystallinity, dense structure, ideal band gap (1.49 eV) and good absorption coefficient (10{sup 4} cm{sup −1}), were obtained for the film annealed at 500 °C for 30 min in nitrogen. - Highlights: • Prepared CZTS film through one-step liquid based approach using non-toxic chemicals. • Studied the effect of N{sub 2} annealing on structural, optical and electrical properties. • The phase pure CZTS absorber film exhibited excellent photovoltaic properties • The film annealed at 500 °C for 30 min in nitrogen exhibited optimum properties.

  14. Effect of low temperature annealing on magneto-caloric effect of Ni–Mn–Sn–Al ferromagnetic shape memory alloy

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, Sandeep [Haldia Institute of Technology, Haldia 721657, West Bengal (India); LCMP, Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences, JD Block, Salt Lake, Kolkata 700098 (India); Stern-Taulats, Enric; Mañosa, Lluís [Departament d’Estructura i Constituents de la Matèria, Facultat de Física, Universitat de Barcelona, 08028 Barcelona, Catalonia (Spain); Mukhopadhyay, P.K., E-mail: pkm@bose.res.in [LCMP, Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences, JD Block, Salt Lake, Kolkata 700098 (India)

    2015-08-25

    Highlights: • Magnetic properties of the system changed after secondary heat treatment. • MCE was enhanced after Al was partially replaced with Sn in Ni–Mn–Al system. • Suitable heat treatment further increased overall MCE in the sample. • Change in magnetic properties occurred due to change in atomic ordering. - Abstract: We studied the effect of low temperature annealing on the atomic ordering and consequent changes in the magnetization and magnetocaloric effect of the sample. The annealing at lower temperatures initially decreased the magnetization and magnetocaloric effect in the sample, but at higher annealing temperatures both increased. The changes in magnetization and magnetocaloric effect arise from the change in atomic ordering. We have shown that post quenching heat treatment offers easy way of optimizing the alloy for magnetocaloric effect. In order to verify that there was no overestimation in the measurement of magnetocaloric effect we also performed an infield calorimetric measurements and compared them with those from the magnetization measurements. We did not find remarkable difference between them.

  15. Effect of Annealing Temperature on CuInSe2/ZnS Thin-Film Solar Cells Fabricated by Using Electron Beam Evaporation

    Directory of Open Access Journals (Sweden)

    H. Abdullah

    2013-01-01

    Full Text Available CuInSe2 (CIS thin films are successfully prepared by electron beam evaporation. Pure Cu, In, and Se powders were mixed and ground in a grinder and made into a pellet. The pallets were deposited via electron beam evaporation on FTO substrates and were varied by varying the annealing temperatures, at room temperature, 250°C, 300°C, and 350°C. Samples were analysed by X-ray diffractometry (XRD for crystallinity and field-emission scanning electron microscopy (FESEM for grain size and thickness. I-V measurements were used to measure the efficiency of the CuInSe2/ZnS solar cells. XRD results show that the crystallinity of the films improved as the temperature was increased. The temperature dependence of crystallinity indicates polycrystalline behaviour in the CuInSe2 films with (1 1 1, (2 2 0/(2 0 4, and (3 1 2/(1 1 6 planes at 27°, 45°, and 53°, respectively. FESEM images show the homogeneity of the CuInSe2 formed. I-V measurements indicated that higher annealing temperatures increase the efficiency of CuInSe2 solar cells from approximately 0.99% for the as-deposited films to 1.12% for the annealed films. Hence, we can conclude that the overall cell performance is strongly dependent on the annealing temperature.

  16. Effect of annealing temperature on microstructure and superelastic properties of a Ti-18Zr-4.5Nb-3Sn-2Mo alloy.

    Science.gov (United States)

    Fu, Jie; Kim, Hee Young; Miyazaki, Shuichi

    2017-01-01

    In this study a new superelastic Ti-18Zr-4.5Nb-3Sn-2Mo alloy was prepared by adding 2at% of Mo as a substitute for Nb to the Ti-18Zr-11Nb-3Sn alloy, and heat treatment at different temperatures was conducted. The temperature dependence of superelasticity and annealing texture was investigated. Texture showed a dependence of annealing temperature: the specimen annealed at 923K for 0.3ks exhibited {113} β β type texture which was similar to the deformation texture, while specimens annealed at 973, 1073K, and 1173K showed {001} β β type recrystallization texture which was preferable for recovery strain. The largest recovery strain of 6.2%, which is the same level as that of the Ti-18Zr-11Nb-3Sn alloy, was obtained in the specimen annealed at 1173K for 0.3ks due to the well-developed {001} β β type recrystallization texture. The Ti-18Zr-3Nb-3Sn-2Mo alloy presented a higher tensile strength compared with the Ti-18Zr-11Nb-3Sn alloy when heat treated at 1173K for 0.3ks, which was due to the solid solution strengthening effect of Mo. Annealing at 923K for 0.3ks was effective in obtaining a good combination of a high strength as 865MPa and a large recovery strain as 5.6%. The high recovery strain was due to the high stress at which the maximum recovery stain was obtained which was attributed to the small grain size formed at low annealing temperature. Copyright © 2016 Elsevier Ltd. All rights reserved.

  17. Effect of annealing temperature on the supercapacitor behaviour of β-V{sub 2}O{sub 5} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jeyalakshmi, K. [Department of Physics, PSNA College of Engineering and Technology, Dindigul 624622 (India); Vijayakumar, S.; Nagamuthu, S. [Department of Physics, Gandhigram Rural Institute, Deemed University, Gandhigram 624302 (India); Muralidharan, G., E-mail: muralg@rediffmail.com [Department of Physics, Gandhigram Rural Institute, Deemed University, Gandhigram 624302 (India)

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ► Structural, optical, supercapacitor properties of β-V{sub 2}O{sub 5} thin films are reported. ► Influence of annealing temperature on β-V{sub 2}O{sub 5} thin films have been studied. ► Film annealed at 300 °C exhibit lower charge transfer resistance. -- Abstract: Vanadium pentoxide thin films are prepared via sol–gel spin coating method. The films coated on FTO and glass substrates are treated at different temperatures ranging from 250 °C to 400 °C. The structural, optical and electrochemical investigations are made. X-ray diffraction analysis shows the film to be composed of V{sub 2}O{sub 5} in β-phase up to annealing temperature of 350 °C and at 400 °C the structural transformation to α-phase is observed. FTIR spectrum shows the formation of V-O bond. The SEM images reveal the formation of nanopores. Optical absorption studies indicate a band gap of 2.2–2.4 eV. The supercapacitor behaviour is studied using cyclic voltammetery technique and electrochemical impedance analysis. The vanadium pentoxide films annealed at 300 °C for an hour exhibits a maximum specific capacitance of 346 F g{sup −1} at a scan rate of 5 mV s{sup −1}.

  18. Hot plate annealing at a low temperature of a thin ferroelectric P(VDF-TrFE) film with an improved crystalline structure for sensors and actuators.

    Science.gov (United States)

    Mahdi, Rahman Ismael; Gan, W C; Abd Majid, W H

    2014-10-14

    Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.

  19. Annealing behavior of high permeability amorphous alloys

    International Nuclear Information System (INIS)

    Rabenberg, L.

    1980-06-01

    Effects of low temperature annealing on the magnetic properties of the amorphous alloy Co 71 4 Fe 4 6 Si 9 6 B 14 4 were investigated. Annealing this alloy below 400 0 C results in magnetic hardening; annealing above 400 0 C but below the crystallization temperature results in magnetic softening. Above the crystallization temperature the alloy hardens drastically and irreversibly. Conventional and high resolution transmission electron microscopy were used to show that the magnetic property changes at low temperatures occur while the alloy is truly amorphous. By imaging the magnetic microstructures, Lorentz electron microscopy has been able to detect the presence of microscopic inhomogeneities in this alloy. The low temperature annealing behavior of this alloy has been explained in terms of atomic pair ordering in the presence of the internal molecular field. Lorentz electron microscopy has been used to confirm this explanation

  20. Damage annealing in low temperature Fe/Mn implanted ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Gunnlaugsson, H. P. [University of Aarhus, Department of Physics and Astronomy (Denmark); Bharuth-Ram, K., E-mail: kbr@tlabs.ac.za [Durban University of Technology, Physics Department (South Africa); Johnston, K. [PH Department, ISOLDE/CERN (Switzerland); Langouche, G. [University of Leuven, Instituut voor Kern-en Stralings fysika (Belgium); Mantovan, R. [Laboratorio MDM, IMM-CNR (Italy); Mølholt, T. E. [University of Iceland, Science Institute (Iceland); Naidoo, D. [University of the Witwatersrand, School of Physics (South Africa); Ólafsson, O. [University of Iceland, Science Institute (Iceland); Weyer, G. [University of Aarhus, Department of Physics and Astronomy (Denmark)

    2015-04-15

    {sup 57}Fe Emission Mössbauer spectra obtained after low fluence (<10{sup 12} cm {sup −2}) implantation of {sup 57}Mn (T{sub 1/2}= 1.5 min.) into ZnO single crystal held at temperatures below room temperature (RT) are presented. The spectra can be analysed in terms of four components due to Fe {sup 2+} and Fe {sup 3+} on Zn sites, interstitial Fe and Fe in damage regions (Fe {sub D}). The Fe {sub D} component is found to be indistinguishable from similar component observed in emission Mössbauer spectra of higher fluence (∼10{sup 15} cm {sup −2}){sup 57}Fe/ {sup 57}Co implanted ZnO and {sup 57}Fe implanted ZnO, demonstrating that the nature of the damage regions in the two types of experiments is similar. The defect component observed in the low temperature regime was found to anneal below RT.

  1. The effects of annealing temperature on the permittivity and electromagnetic attenuation performance of reduced graphene oxide

    Science.gov (United States)

    Wu, Fan; Zeng, Qiao; Xia, Yilu; Sun, Mengxiao; Xie, Aming

    2018-05-01

    Reduced graphene oxide (RGO) has been prepared through the thermal reduction method with different annealing temperatures to explore the effects of temperature on the permittivity and electromagnetic attenuation performance. The real and imaginary parts of permittivity increase along with the decrease in the oxygen functional group and the increase in the filler loading ratio. A composite only loaded with 1 wt. % of RGO can possess an effective electromagnetic absorption bandwidth of 7.60 GHz, when graphene oxide was reduced under 300 °C for 2 h. With the annealing temperature increased to 700 °C and the well reduced RGO loaded 7 wt. % in the composite, the electromagnetic interference shielding efficiency can get higher than 35 dB from 2 to 18 GHz. This study shows that controlling the oxygen functional groups on the RGO surface can also obtain an ideal electromagnetic attenuation performance without any other decorated nanomaterials.

  2. Annealing temperature dependent reversible wettability switching of micro/nano structured ZnO superhydrophobic surfaces

    Science.gov (United States)

    Velayi, Elmira; Norouzbeigi, Reza

    2018-05-01

    Superhydrophobic ZnO surfaces with reversibly tunable wettability were fabricated on stainless steel meshes via a facile chemical bath deposition method just by regulating the micro/nano structured ZnO needles without using chemical post modifications. The obtained surfaces can be easily and reversibly switched between superhydrophobic and superhydrophilic/underwater superoleophobic characteristics by altering the annealing temperatures. As-prepared sample exhibited long-term superhydrophobic properties with a water contact angle (WCA) of 163.8° ± 1.8° and contact angle hysteresis (CAH) of 1.1° ± 0.8°. The SEM, XRD, XPS and Raman analyses were employed to characterize the morphological features and surface chemistry of the prepared samples. SEM images showed the formation of ZnO micro/nanoneedles with a diameter of ∼90 nm on the substrate. The superhydrophobic ZnO surface was switched to highly hydrophilic and underwater superoleophobic properties with an oil contact angle (OCA) of about 172.5° after being annealed at 400 °C in air for 30 min and restored to superhydrophobic state again by altering the annealing temperature to 150 °C. Mechanical durability of the ZnO superhydrophobic surface was tested by an abrasion test. Results confirmed that the prepared surface exhibited an excellent robustness after 20 abrasion cycles under the pressure of 4.7 kPa.

  3. Influence of Al concentration and annealing temperature on structural, optical, and electrical properties of Al co-doped ZnO thin films

    International Nuclear Information System (INIS)

    Gürbüz, Osman; Kurt, İsmail; Çalışkan, Serkan; Güner, Sadık

    2015-01-01

    Highlights: • RF magnetron sputtering technique seems to be very efficient method for fabrication of Al doped ZnO (AZO) films. • Long range single crystalline structure improves with annealing process. • Optical properties became much better after annealing process especially for the AZO films that include high Al concentration. • Much greater conductivity with increasing Al concentration and annealing process. • AZO films have potential applicability in spintronic devices. - Abstract: The pure ZnO and Al-doped ZnO (AZO) thin films (thickness: 200 nm) were prepared on both side polished silica (SiO 2 ) substrates via RF magnetron sputtering at room temperature by using 2.5 inches high-purity ZnO (99.9%) and Al (99.9%) targets. The samples were annealed at 300 °C, 400 °C and 500 °C for 45 min in N 2 ambient in quartz annealing furnace system, respectively. We investigated the effects of various Al concentrations and annealing treatment on the structural, electrical, and optical properties of films. The preferred crystallization was observed along c axis (single (0 0 2) diffraction peak) from substrate surface assigning the single crystalline Würtzite lattice for pure ZnO and AZO thin films. Although increasing Al concentration decreases the order of crystallization of as-grown films, annealing process increases the long range crystal order. The crystallite sizes vary between minimum 12.98 nm and maximum 20.79 nm for as-grown and annealed samples. The crystallite sizes decrease with increasing Al concentration but increase with increasing annealing temperature as general trend. The grain size and porosity of films change with annealing treatment. The smaller grains coalesce together to form larger grains for many films. However, a reverse behavior is seen for Al 2.23 ZnO and Al 12.30 ZnO samples. That is, Al concentration plays critical role as well as temperature on grain size. Low percent optical transmittance (T%) is observed due to higher Al

  4. High-Temperature Electrical Insulation Behavior of Alumina Films Prepared at Room Temperature by Aerosol Deposition and Influence of Annealing Process and Powder Impurities

    Science.gov (United States)

    Schubert, Michael; Leupold, Nico; Exner, Jörg; Kita, Jaroslaw; Moos, Ralf

    2018-04-01

    Alumina (Al2O3) is a widely used material for highly insulating films due to its very low electrical conductivity, even at high temperatures. Typically, alumina films have to be sintered far above 1200 °C, which precludes the coating of lower melting substrates. The aerosol deposition method (ADM), however, is a promising method to manufacture ceramic films at room temperature directly from the ceramic raw powder. In this work, alumina films were deposited by ADM on a three-electrode setup with guard ring and the electrical conductivity was measured between 400 and 900 °C by direct current measurements according to ASTM D257 or IEC 60093. The effects of film annealing and of zirconia impurities in the powder on the electrical conductivity were investigated. The conductivity values of the ADM films correlate well with literature data and can even be improved by annealing at 900 °C from 4.5 × 10-12 S/cm before annealing up to 5.6 × 10-13 S/cm after annealing (measured at 400 °C). The influence of zirconia impurities is very low as the conductivity is only slightly elevated. The ADM-processed films show a very good insulation behavior represented by an even lower electrical conductivity than conventional alumina substrates as they are commercially available for thick-film technology.

  5. Postdeposition Annealing Effect on Cu2ZnSnS4 Thin Films Grown at Different Substrate Temperature

    Directory of Open Access Journals (Sweden)

    Samia Ahmed Nadi

    2014-01-01

    Full Text Available Cu2ZnSnS4 (CZTS thin films were deposited on top of Molybdenum (Mo coated soda lime glass (SLG substrates using a single target rf magnetron sputtering technique. The sputtering parameters such as base pressure, working pressure, rf power, argon (Ar gas flow rate, and deposition time were kept consistent throughout the experiment. The effect of different substrate temperatures, for example, room temperature (RT, 300°C, 350°C, 370°C, 400°C, and 450°C, was analyzed by studying their structural, electrical, and optical properties. As-sputtered films were then annealed at 460°C. X-ray diffraction (XRD measurement revealed the structure to be kesterite with peak of (112 plane in both annealed and as-sputtered CZTS thin films. The crystallinity of the films improved with the increasing substrate temperature until 370°C. Secondary phases of MoS2, CuxMoSx, CuxSnSx, CuxS, and Cu6MoSnS8 (hemusite were also observed in the annealed CZTS films. Scanning electron microscopy (SEM shows crystallite size of deposited CZTS thin film to be proportionally related to deposition temperature. The highest surface roughness of 67.318 nm is observed by atomic force microscopy (AFM. The conductivity type of the films was found to be p-type by Hall effect measurement system.

  6. Temperature dependence of GMR and effect of annealing on electrodeposited Co-Ag granular films

    International Nuclear Information System (INIS)

    Garcia-Torres, Jose; Valles, Elisa; Gomez, Elvira

    2010-01-01

    The magnetoresistance of Co-Ag granular films composed of superparamagnetic and ferromagnetic particles was studied at different temperatures. The increase in the GMR values while decreasing temperature down to 20 K was quantified. The non-saturating behaviour of the MR(H) curves was retained even at the lowest measurement temperature, which was mainly attributed to the dipolar interaction among the superparamagnetic particles. The influence of the annealing conditions on the magnetoresistance was also studied. In all conditions, a decrease in the GMR values was measured being attributed to an increase in the particle size.

  7. A study on low temperature transformation ferrite in ultra low carbon IF steels (I) - effects of manganese and annealing conditions

    International Nuclear Information System (INIS)

    Jeong, Woo Chang; Lee, Jae Yeon; Jin, Young Sool

    2001-01-01

    An investigation was made to determine the effects of Mn content and annealing conditions on the formation of the low temperature transformation products in ultra low carbon interstitial free steels. With increasing the Mn content, yield and tensile strengths increased, but yield ratio decreased. The Mn was found to be effective to decrease the yield point elongation, causing continuous yielding in 3% Mn steel. Low temperature transformation ferrites such as quasi-polygonal ferrite, granular bainitic ferrite, and bainitic ferrite more easily formed with higher Mn content, higher annealing temperature, longer annealing time, and faster cooling rate. Polygonal ferrite grain was readily identified in the light microscope and was characterized by the polyhedral and equiaxed shape while quasi-polygonal ferrite showed the irregular changeful grain boundaries. It was found that both granular bainitic and bainitic ferrites revealed some etching evidence of substructures in the light microscope

  8. MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

    International Nuclear Information System (INIS)

    Molina, Joel; Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso

    2012-01-01

    Highlights: ► HfO 2 nanoparticles used as charge trapping layer in MOHOS memory devices. ► Increasing HfO 2 nanoparticles concentration enhances charge injection and trapping. ► Enhancement of memory performance with low temperature annealing. ► Charge injection is done without using any hot-carrier injection mechanism. ► Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO 2 nanoparticles (np-HfO 2 ) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal–oxide–high-k–oxide–silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol–gel spin coating method after using different concentrations of np-HfO 2 and low temperature annealing (down to 425 °C) in order to obtain charge–retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO 2 concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO 2 as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

  9. Effect of annealing temperature on electrical properties of Au/polyvinyl alcohol/n-InP Schottky barrier structure

    International Nuclear Information System (INIS)

    Reddy, V. Rajagopal; Reddy, M. Siva Pratap; Kumar, A. Ashok; Choi, Chel-Jong

    2012-01-01

    In the present work, thin film of polyvinyl alcohol (PVA) is fabricated on n-type InP substrate as an interfacial layer for electronic modification of Au/n-InP Schottky contact. The electrical characteristics of Au/PVA/n-InP Schottky diode are determined at annealing temperature in the range of 100–300 °C by current–voltage (I-V) and capacitance–voltage (C-V) methods. The Schottky barrier height and ideality factor (n) values of the as-deposited Au/PVA/n-InP diode are obtained at room temperature as 0.66 eV (I-V), 0.82 eV (C-V) and 1.32, respectively. Upon annealing at 200 °C in nitrogen atmosphere for 1 min, the barrier height value increases to 0.81 eV (I-V), 0.99 eV (C-V) and ideality factor decreases to 1.18. When the contact is annealed at 300 °C, the barrier height value decreases to 0.77 eV (I-V), 0.96 eV (C-V) and ideality factor increases to 1.22. It is observed that the interfacial layer of PVA increases the barrier height by the influence of the space charge region of the Au/n-InP Schottky junction. The discrepancy between Schottky barrier heights calculated from I-V and C-V measurements is also explained. Further, Cheung's functions are used to extract the series resistance of Au/PVA/n-InP Schottky diode. The interface state density as determined by Terman's method is found to be 1.04 × 10 12 and 0.59 × 10 12 cm −2 eV −1 for the as-deposited and 200 °C annealed Au/PVA/n-InP Schottky diodes. Finally, it is seen that the Schottky diode parameters changed with increase in the annealing temperature. - Highlights: ► Electrical properties of Au/polyvinyl alcohol (PVA)/n-InP structure have been studied. ► The Au/PVA/n-InP Schottky structure showed a good rectifying behavior. ► A maximum barrier height is obtained when the contact is annealed at 200 °C. ► Interface state density found to be 0.59 × 10 12 cm −2 eV −1 for 200 °C annealed contact. ► Significant effect of interface state density and series resistance on electrical

  10. Correlation between stoichiometry and surface structure of the polar MgAl2O4(100) surface as a function of annealing temperature

    DEFF Research Database (Denmark)

    Jensen, Thomas Nørregaard; Rasmussen, Morten Karstoft; Knudsen, Jan

    2015-01-01

    is found to significantly increase as the surface is sputtered and annealed in oxygen at intermediate temperatures ranging from 800-1000 [degree]C. The Al excess is explained by the observed surface structure, where the formation of nanometer sized pits and elongated patches with Al terminated step edges....... The excess of Al and high concentration of octahedral vacancies, very interestingly means, that the top few surface layers of the MgAl2O4(100) adopts a surface structure similar to that of a spinel-like transition Al2O3 film. However, after annealing at a high temperature of 1200 [degree]C, the Al/Mg ratio...... are filled by Mg from the bulk, due to the increased mobility at high annealing temperatures....

  11. Effect of Annealing Temperature on Microstructure and Mechanical Properties of Hot-Dip Galvanizing DP600 Steel

    Science.gov (United States)

    Hai-yan, Sun; Zhi-li, Liu; Yang, Xu; Jian-qiang, Shi; Lian-xuan, Wang

    Hot-dip galvanizing dual phase steel DP600 steel grade with low Si was produced by steel plant and experiments by simulating galvanizing thermal history. The microstructure was observed and analyzed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The effect of different annealing temperatures on the microstructure and mechanical properties of dual-phase steel was also discussed. The experimental results show that the dual-phase steel possesses excellent strength and elongation that match EN10346 600MPa standards. The microstructure is ferrite and martensite. TEM micrograph shows that white ferrite with black martensite islands inlay with a diameter of around 1um and the content of 14 18%. The volume will expand and phase changing take the form of shear transformation when ferrite converted to martensite. So there are high density dislocations in ferrite crystalline grain near martensite. The martensite content growing will be obvious along with annealing temperature going up. But the tendency will be weak when temperature high.

  12. Corrosion resistance of duplex stainless steel subjected to long-term annealing in the spinodal decomposition temperature range

    Energy Technology Data Exchange (ETDEWEB)

    Lo, K.H., E-mail: KHLO@umac.mo [Department of Electromechanical Engineering, University of Macau, Macau (China); Kwok, C.T.; Chan, W.K.; Zeng, D. [Department of Electromechanical Engineering, University of Macau, Macau (China)

    2012-02-15

    Highlights: Black-Right-Pointing-Pointer Long-term DLEPR data on duplex stainless steel. Black-Right-Pointing-Pointer Spinodal decomposition remains unabated even after 15,000 h of annealing. Black-Right-Pointing-Pointer Effect of long-term annealing on healing has been investigated. - Abstract: The effect of thermal annealing up to 15,000 h between 300 Degree-Sign C and 500 Degree-Sign C on the corrosion resistance of the duplex stainless steel (DSS) 7MoPLUS has been investigated by using the DLEPR test. Spinodal decomposition in 7MoPLUS is unabated even after annealing for 15,000 h and no healing has been observed. The possible healing mechanisms in this temperature range (back diffusion of Cr atoms from the Cr-rich ferrite ({alpha}{sub Cr}) and diffusion of Cr atoms from the austenite) and its absence in the present steel have been discussed.

  13. Effect of Mn Content and Solution Annealing Temperature on the Corrosion Resistance of Stainless Steel Alloys

    Directory of Open Access Journals (Sweden)

    Ihsan-ul-Haq Toor

    2014-01-01

    Full Text Available The corrosion behavior of two specially designed austenitic stainless steels (SSs having different Nickel (Ni and Manganese (Mn contents was investigated. Prior to electrochemical tests, SS alloys were solution-annealed at two different temperatures, that is, at 1030°C for 2 h and 1050°C for 0.5 h. Potentiodynamic polarization (PD tests were carried out in chloride and acidic chloride, whereas linear polarization resistance (LPR and electrochemical impedance spectroscopy (EIS was performed in 0.5 M NaCl solution at room temperature. SEM/EDS investigations were carried out to study the microstructure and types of inclusions present in these alloys. Experimental results suggested that the alloy with highest Ni content and annealed at 1050°C/0.5 hr has the highest corrosion resistance.

  14. The influence of annealing temperature on the interface and photovoltaic properties of CdS/CdSe quantum dots sensitized ZnO nanorods solar cells.

    Science.gov (United States)

    Qiu, Xiaofeng; Chen, Ling; Gong, Haibo; Zhu, Min; Han, Jun; Zi, Min; Yang, Xiaopeng; Ji, Changjian; Cao, Bingqiang

    2014-09-15

    Arrays of ZnO/CdS/CdSe core/shell nanocables with different annealing temperatures have been investigated for CdS/CdSe quantum dots sensitized solar cells (QDSSCs). CdS/CdSe quantum dots were synthesized on the surface of ZnO nanorods that serve as the scaffold via a simple ion-exchange approach. The uniform microstructure was verified by scanning electron microscope and transmission electron microscope. UV-Visible absorption spectrum and Raman spectroscopy analysis indicated noticeable influence of annealing temperature on the interface structural and optical properties of the CdS/CdSe layers. Particularly, the relationship between annealing temperatures and photovoltaic performance of the corresponding QDSSCs was investigated employing photovoltaic conversion, quantum efficiency and electrochemical impedance spectra. It is demonstrated that higher cell efficiency can be obtained by optimizing the annealing temperature through extending the photoresponse range and improving QD layer crystal quality. Copyright © 2014 Elsevier Inc. All rights reserved.

  15. Principal and secondary luminescence lifetime components in annealed natural quartz

    International Nuclear Information System (INIS)

    Chithambo, M.L.; Ogundare, F.O.; Feathers, J.

    2008-01-01

    Time-resolved luminescence spectra from quartz can be separated into components with distinct principal and secondary lifetimes depending on certain combinations of annealing and measurement temperature. The influence of annealing on properties of the lifetimes related to irradiation dose and temperature of measurement has been investigated in sedimentary quartz annealed at various temperatures up to 900 deg. C. Time-resolved luminescence for use in the analysis was pulse stimulated from samples at 470 nm between 20 and 200 deg. C. Luminescence lifetimes decrease with measurement temperature due to increasing thermal effect on the associated luminescence with an activation energy of thermal quenching equal to 0.68±0.01eV for the secondary lifetime but only qualitatively so for the principal lifetime component. Concerning the influence of annealing temperature, luminescence lifetimes measured at 20 deg. C are constant at about 33μs for annealing temperatures up to 600 0 C but decrease to about 29μs when the annealing temperature is increased to 900 deg. C. In addition, it was found that lifetime components in samples annealed at 800 deg. C are independent of radiation dose in the range 85-1340 Gy investigated. The dependence of lifetimes on both the annealing temperature and magnitude of radiation dose is described as being due to the increasing importance of a particular recombination centre in the luminescence emission process as a result of dynamic hole transfer between non-radiative and radiative luminescence centres

  16. Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots

    Science.gov (United States)

    Alireza, Samavati; Othaman, Z.; K. Ghoshal, S.; K. Mustafa, M.

    2015-02-01

    The influences of thermal annealing on the structural and optical features of radio frequency (rf) magnetron sputtered self-assembled Ge quantum dots (QDs) on Si (100) are investigated. Preferentially oriented structures of Ge along the (220) and (111) directions together with peak shift and reduced strain (4.9% to 2.7%) due to post-annealing at 650 °C are discerned from x-ray differaction (XRD) measurement. Atomic force microscopy (AFM) images for both pre-annealed and post-annealed (650 °C) samples reveal pyramidal-shaped QDs (density ˜ 0.26× 1011 cm-2) and dome-shape morphologies with relatively high density ˜ 0.92 × 1011 cm-2, respectively. This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity. The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role. The observed red-shift ˜ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing, and is related to the effect of quantum confinement. Furthermore, the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO2 or GeOx and holes in the ground state of Ge dots. Raman spectra of both samples exhibit an intense Ge-Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart. An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes. A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established. Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated. Project supported by Ibnu Sina Institute for Fundamental Science Study, Universiti Teknologi Malaysia

  17. Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots

    International Nuclear Information System (INIS)

    Samavati, Alireza; Othaman, Z.; Ghoshal, S. K.; Mustafa, M. K.

    2015-01-01

    The influences of thermal annealing on the structural and optical features of radio frequency (rf) magnetron sputtered self-assembled Ge quantum dots (QDs) on Si (100) are investigated. Preferentially oriented structures of Ge along the (220) and (111) directions together with peak shift and reduced strain (4.9% to 2.7%) due to post-annealing at 650 °C are discerned from x-ray differaction (XRD) measurement. Atomic force microscopy (AFM) images for both pre-annealed and post-annealed (650 °C) samples reveal pyramidal-shaped QDs (density ∼ 0.26× 10 11 cm −2 ) and dome-shape morphologies with relatively high density ∼ 0.92 × 10 11 cm −2 , respectively. This shape transformation is attributed to the mechanism of inter-diffusion of Si in Ge interfacial intermixing and strain non-uniformity. The annealing temperature assisted QDs structural evolution is explained using the theory of nucleation and growth kinetics where free energy minimization plays a pivotal role. The observed red-shift ∼ 0.05 eV in addition to the narrowing of the photoluminescence peaks results from thermal annealing, and is related to the effect of quantum confinement. Furthermore, the appearance of a blue-violet emission peak is ascribed to the recombination of the localized electrons in the Ge-QDs/SiO 2 or GeO x and holes in the ground state of Ge dots. Raman spectra of both samples exhibit an intense Ge–Ge optical phonon mode which shifts towards higher frequency compared with those of the bulk counterpart. An experimental Raman profile is fitted to the models of phonon confinement and size distribution combined with phonon confinement to estimate the mean dot sizes. A correlation between thermal annealing and modifications of the structural and optical behavior of Ge QDs is established. Tunable growth of Ge QDs with superior properties suitable for optoelectronic applications is demonstrated. (paper)

  18. Effect of annealing temperature on structural, morphological and electrical properties of nanoparticles TiO{sub 2} thin films by sol-gel method

    Energy Technology Data Exchange (ETDEWEB)

    Muaz, A. K. M.; Hashim, U., E-mail: uda@unimap.edu.my; Arshad, M. K. Md.; Ruslinda, A. R.; Ayub, R. M.; Gopinath, Subash C. B.; Voon, C. H.; Liu, Wei-Wen; Foo, K. L. [Institute of Nano Electronic Engineering, Univerisiti Malaysia Perlis, 01000 Kangar, Perlis (Malaysia)

    2016-07-06

    In this paper, the sol-gel method is used to prepare nanoparticles titanium dioxide (TiO{sub 2}) thin films at different annealing temperature. The prepared sol was deposited on the p-SiO{sub 2} substrates by spin coating technique under room temperature. The nanoparticles TiO{sub 2} solution was synthesized using Ti{OCH(CH_3)_2}{sub 4} as a precursor with an methanol solution at a molar ratio 1:10. The prepared TiO{sub 2} sols will further validate through structural, morphological and electrical properties. From the X-ray diffraction (XRD) analysis, as-deposited films was found to be amorphous in nature and tend to transform into tetragonal anatase and rutile phase as the films annealed at 573 and 773 K, respectively. The diversification of the surface roughness was characterized by atomic force microscopy (AFM) indicated the roughness and thickness very dependent on the annealing temperature. The two-point probe electrical resistance and conductance of nanoparticles TiO{sub 2} thin films were determined by the DC current-voltage (IV) analysis. From the I-V measurement, the electrical conductance increased as the films annealed at higher temperature.

  19. Effect of the Annealing Temperature on the Structure and Magnetic Properties of 2% Si Steel

    Directory of Open Access Journals (Sweden)

    Cunha Marco A. da

    2002-01-01

    Full Text Available To study the effect of the annealing temperature on the structure and magnetic properties of a 2%Si non-oriented steel cold rolled samples were submitted to final annealing in the temperature range of 540 °C to 980 °C in hydrogen atmosphere. The samples had received cold rolling reduction of 75% to a final thickness of 0.50 mm. Recovery and recrystallization resulted in significant improvement of magnetic properties, with decrease of iron loss (W1.5 and increase of polarisation (J50 and relative permeability (µ1.5. On further grain growth, after recrystallization, there was simultaneous decrease of iron loss, polarisation and relative permeability. Texture evolution on grain growth accounts for the observed decrease of J50 and µ1.5. The beneficial effect of increasing grain size on core loss overcomes the detrimental effect of texture resulting in decrease of W1.5.

  20. Effects of carbon nanotube content and annealing temperature on the hardness of CNT reinforced aluminum nanocomposites processed by the high pressure torsion technique

    Energy Technology Data Exchange (ETDEWEB)

    Phuong, Doan Dinh, E-mail: phuongdd@ims.vast.ac.vn [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Str., Cau Giay Distr., Hanoi (Viet Nam); Trinh, Pham Van; An, Nguyen Van; Luan, Nguyen Van; Minh, Phan Ngoc [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Str., Cau Giay Distr., Hanoi (Viet Nam); Khisamov, Rinat Kh.; Nazarov, Konstantin S.; Zubairov, Linar R.; Mulyukov, Radik R.; Nazarov, Ayrat A. [Institute for Metals Superplasticity Problems, Russian Academy of Sciences 39, Stepan Khalturin Str., Ufa 450001 (Russian Federation)

    2014-11-15

    Highlights: • CNT/Al nanocomposites were consolidated by HIP and subsequently processed by the high pressure torsion technique. • High pressure torsion processing was unable to break apart or disperse the CNT agglomerates persisted in powder preparation. • HPT-processed CNT/Al nanocomposites exhibited secondary hardening during annealing at temperatures below 150 °C. - Abstract: In this paper, the microstructure and hardness of CNT reinforced aluminium (CNT/Al) nanocomposites prepared by the advanced powder metallurgy method and subsequently processed by the high pressure torsion (HPT) technique are studied. The effects of CNT content and annealing temperature on the hardness of the nanocomposites are investigated. The results show that annealing materials at temperatures below 150 °C leads to secondary hardening, while annealing at higher temperatures soften the nanocomposites. HPT-processed CNT/Al nanocomposites with 1.5 wt.% of CNTs are shown to have the highest hardness in comparison with other composites containing CNTs from 0 up to 2 wt.%. Microstructures, CNT distribution and the phase composition of CNT/Al nanocomposites are investigated by transmission and scanning electron microscopy and X-ray diffraction techniques.

  1. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO{sub 2} matrix

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, Nupur, E-mail: n1saxena@gmail.com; Kumar, Pragati; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi-110007 (India)

    2015-05-15

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO{sub 2} matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO{sub 2} is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters.

  2. Structural properties of WO{sub 3} dependent of the annealing temperature deposited by hot-filament metal oxide deposition

    Energy Technology Data Exchange (ETDEWEB)

    Flores M, J. E. [Benemerita Universidad Autonoma de Puebla, Facultad de Ciencias de la Electronica, Av. San Claudio y 18 Sur, Ciudad Universitaria, Col. Jardines de San Manuel, 72570 Puebla (Mexico); Diaz R, J. [IPN, Centro de Investigacion en Biotecnologia Aplicada, Ex-Hacienda de San Molino Km 1.5 Tepetitla, 90700 Tlaxcala (Mexico); Balderas L, J. A., E-mail: eflores@ece.buap.mx [IPN, Unidad Profesional Interdisciplinaria de Biotecnologia, Av. Acueducto s/n, Col. Barrio la Laguna, 07340 Mexico D. F. (Mexico)

    2012-07-01

    In this work presents a study of the effect of the annealing temperature on structural and optical properties of WO{sub 3} that has been grown by hot-filament metal oxide deposition. The chemical stoichiometry was determined by X-ray photoelectron spectroscopy. By X-ray diffraction obtained that the as-deposited WO{sub 3} films present mainly monoclinic crystalline phase. WO{sub 3} optical band gap energy can be varied from 2.92 to 3.15 eV obtained by transmittance measurements by annealing WO{sub 3} from 100 to 500 C. The Raman spectrum of the as-deposited WO{sub 3} film shows four intense peaks that are typical Raman peaks of crystalline WO{sub 3} (m-phase) that corresponds to the stretching vibrations of the bridging oxygen that are assigned to W-O stretching ({upsilon}) and W-O bending ({delta}) modes, respectively, which enhanced and increased their intensity with the annealing temperature. (Author)

  3. Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, A., E-mail: alexander.schmid@physik.tu-freiberg.de; Schroeter, Ch.; Otto, R.; Heitmann, J. [Institute of Applied Physics, TU Bergakademie Freiberg, 09599 Freiberg (Germany); Schuster, M. [Namlab gGmbH, 01187 Dresden (Germany); Klemm, V.; Rafaja, D. [Institute of Materials Science, TU Bergakademie Freiberg, 09599 Freiberg (Germany)

    2015-02-02

    Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9 × 10{sup −6} Ω cm{sup 2} was achieved at an annealing temperature of 650 °C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150 K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

  4. Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits—A comparative study

    DEFF Research Database (Denmark)

    Pantleon, Karen; Somers, Marcel A. J.

    2010-01-01

    and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing......Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver...... kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted...

  5. High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air

    Directory of Open Access Journals (Sweden)

    Jian Gao

    2018-01-01

    Full Text Available In this work, we have investigated the effect of low temperature post-annealing in air on atomic-layer-deposited ZnO metal-semiconductor-metal (MSM ultraviolet photodetectors (UV PDs. The results indicate that the post-annealing could reduce the dark-current of the MSM device by ten orders of magnitude; however, it also decreased the photo-current of the UV PD by one order of magnitude. The former could be related to the reduction of oxygen vacancies and the crystallization enhancement of the ZnO film; the latter should be attributed to the reduction of defects in the ZnO film, thus resulting in a smaller decrease in thermionic-field emission tunneling barrier because of reduced holes trapped near the interface. For the post-annealing at 250 oC for 30 min, the dark-current was equal to 5.16×10-11 A, and the ultraviolet-visible rejection ratio approached 1.4×106, and the responsivity was as high as 1.78×103 A/W at 5V. Further, prolonging annealing time at a lower temperature (200 oC also could greatly improve the performance of the UV PD, i.e., 90 min annealing produced a quite large responsivity of 1.30×104 A/W at 5 V while maintaining a very low dark-current (1.42×10-10 A and a large ultraviolet-visible rejection ratio (4.06×105.

  6. Influence of high temperature annealing on the structure, hardness and tribological properties of diamond-like carbon and TiAlSiCN nanocomposite coatings

    International Nuclear Information System (INIS)

    Xie, Z.W.; Wang, L.P.; Wang, X.F.; Huang, L.; Lu, Y.; Yan, J.C.

    2011-01-01

    Diamond-like carbon (DLC) and TiAlSiCN nanocomposite coatings were synthesized and annealed at different temperatures in a vacuum environment. The microstructure, hardness and tribological properties of as-deposited and annealed DLC-TiAlSiCN nanocomposite coatings were characterized by X-ray diffraction, X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), Raman spectroscopy, nano-indentation and friction tests. The TEM results reveal that the as-deposited DLC-TiAlSiCN coating has a unique nanocomposite structure consisting of TiCN nanocrystals embedded in an amorphous matrix consisting of a-Si 3 N 4 , a-SiC, a-CN and DLC, and the structure changed little after annealing at 800 °C. However, XPS and Raman results show that an obvious graphitization of the DLC phase occurred during the annealing process and it worsened with annealing temperature. Because of the graphitization, the hardness of the DLC-TiAlSiCN coating after annealing at 800 °C decreased from 45 to 36 GPa. In addition, the DLC-TiAlSiCN coating after annealing at 800 °C has a similar friction coefficient to the as-deposited coating.

  7. Laser-annealed GaP OHMIC contacts for high-temperature devices

    International Nuclear Information System (INIS)

    Eknoyan, O.; Van der Hoeven, W.; Richardson, T.; Porter, W.A.; Coquat, J.A.

    1980-01-01

    The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. Aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones

  8. Reduction of Defects on Microstructure Aluminium Nitride Using High Temperature Annealing Heat Treatment

    Science.gov (United States)

    Tanasta, Z.; Muhamad, P.; Kuwano, N.; Norfazrina, H. M. Y.; Unuh, M. H.

    2018-03-01

    Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 °C. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.

  9. Influence of Step Annealing Temperature on the Microstructure and Pitting Corrosion Resistance of SDSS UNS S32760 Welds

    Science.gov (United States)

    Yousefieh, M.; Shamanian, M.; Saatchi, A.

    2011-12-01

    In the present work, the influence of step annealing heat treatment on the microstructure and pitting corrosion resistance of super duplex stainless steel UNS S32760 welds have been investigated. The pitting corrosion resistance in chloride solution was evaluated by potentiostatic measurements. The results showed that step annealing treatments in the temperature ranging from 550 to 1000 °C resulted in a precipitation of sigma phase and Cr2N along the ferrite/austenite and ferrite/ferrite boundaries. At this temperature range, the metastable pits mainly nucleated around the precipitates formed in the grain boundary and ferrite phase. Above 1050 °C, the microstructure contains only austenite and ferrite phases. At this condition, the critical pitting temperature of samples successfully arrived to the highest value obtained in this study.

  10. Annealing of KDP crystals in vacuum and under pressure

    International Nuclear Information System (INIS)

    Pritula, I.M.; Kolybayeva, M.I.; Salo, V.I.

    1997-01-01

    The effect of the high temperature annealing (T an > 230 degrees C) on the absorption spectra and laser damage threshold of KDP crystals was studied in the present paper. The experiments on isotermal annealing were performed under pressure in the atmosphere with specific properties. The composition of the atmosphere was selected to be chose to that of the desorbing gas component determined during annealing in vacuum. The mentioned conditions allowed to conduct annealing in the temperature range of 230 - 280 degrees C without degradation of the sample. The variations in the absorption spectra showed that the effect of the annealing is most strongly revealed in the short - wave region of the spectrum (λ -1 before and k=0.12 cm -1 after annealing) demonstrate that at temperatures ∼ 230 - 280 degrees C the processes ensuring the improvement of the structure quality are stimulated in the volume of the crystals: (a) before the annealing laser damage threshold was 1.5 10 11 W/cm 2 ; (b) after the annealing (t = 280 degrees C) it became 4 10 11 W/cm 2

  11. Significant mobility improvement of amorphous In-Ga-Zn-O thin-film transistors annealed in a low temperature wet ambient environment

    Science.gov (United States)

    Jallorina, Michael Paul A.; Bermundo, Juan Paolo S.; Fujii, Mami N.; Ishikawa, Yasuaki; Uraoka, Yukiharu

    2018-05-01

    Transparent amorphous oxide semiconducting materials such as amorphous InGaZnO used in thin film transistors (TFTs) are typically annealed at temperatures higher than 250 °C to remove any defects present and improve the electrical characteristics of the device. Previous research has shown that low cost and low temperature methods improve the electrical characteristics of the TFT. With the aid of surface and bulk characterization techniques in comparison to the device characteristics, this work aims to elucidate further on the improvement mechanisms of wet and dry annealing ambients that affect the electrical characteristics of the device. Secondary Ion Mass Spectrometry results show that despite outward diffusion of -H and -OH species, humid annealing ambients counteract outward diffusion of these species, leading to defect sites which can be passivated by the wet ambient. X-ray Photoelectron Spectroscopy results show that for devices annealed for only 30 min in a wet annealing environment, the concentration of metal-oxide bonds increased by as much as 21.8% and defects such as oxygen vacancies were reduced by as much as 18.2% compared to an unannealed device. Our work shows that due to the oxidizing power of water vapor, defects are reduced, and overall electrical characteristics are improved as evidenced with the 150 °C wet O2, 30 min annealed sample which exhibited the highest mobility of 5.00 cm2/V s, compared to 2.36 cm2/V s for a sample that was annealed at 150 °C in a dry ambient atmospheric environment for 2 h.

  12. The effect of annealing atmosphere on the thermoluminescence of synthetic calcite

    International Nuclear Information System (INIS)

    Pagonis, Vasilis

    1998-01-01

    Samples of high purity calcite powder were annealed in air, nitrogen and carbon dioxide atmospheres in the temperature range 300-700 deg. C and in atmospheric pressure. The samples were subsequently irradiated and the effect of the annealing atmosphere and temperature on the thermoluminescence (TL) of the samples was studied. Our results show that both carbonate and oxygen ions play an important part in the TL of calcite annealed in this temperature range. The intensities of the TL signal in the nitrogen and carbon dioxide anneals rise continuously with the annealing temperature. For all annealing temperatures it was found that the carbon dioxide atmosphere caused an increase in the observed TL signal as compared with anneals in an inert nitrogen atmosphere, while the shape of the TL glow curves remained the same. This increase in the observed TL signal is explained via the surface adsorption of carbonate ions. The shape and location of the TL peaks suggest that samples annealed in air exhibit a different type of TL center than samples annealed in nitrogen and carbon dioxide atmospheres. A possible mechanism for the role of oxygen ions involves a surface adsorption process and a subsequent diffusion of oxygen ions in the bulk of the crystal. Annealing of the samples in air at temperatures T>600 deg. C causes a collapse of the TL signal, in agreement with previous studies of calcite powders. No such collapse of the TL signal is observed for the nitrogen and carbon dioxide anneals, suggesting that a different type of TL center and/or recombination center is involved in air anneals. Arrhenius plots for the air anneals yield an activation energy E=0.45±0.05 eV, while the carbon dioxide and nitrogen anneals yield a lower activation energy E=0.28±0.04 eV

  13. Annealing effects on electron-beam evaporated Al2O3 films

    International Nuclear Information System (INIS)

    Shang Shuzhen; Chen Lei; Hou Haihong; Yi Kui; Fan Zhengxiu; Shao Jianda

    2005-01-01

    The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2 O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 deg. C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 deg. C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given

  14. Annealing effects on electron-beam evaporated Al 2O 3 films

    Science.gov (United States)

    Shuzhen, Shang; Lei, Chen; Haihong, Hou; Kui, Yi; Zhengxiu, Fan; Jianda, Shao

    2005-04-01

    The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 °C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 °C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given.

  15. Thermal annealing studies in muscovite and in quartz

    International Nuclear Information System (INIS)

    Roberts, J.H.; Gold, R.; Ruddy, F.H.

    1979-06-01

    In order to use Solid State Track Recorders (SSTR) in environments at elevated temperatures, it is necessary to know the thermal annealing characteristics of various types of SSTR. For applications in the nuclear energy program, the principal interest is focused upon the annealing of fission tracks in muscovite mica and in quartz. Data showing correlations between changes in track diameters and track densities as a function of annealing time and temperature will be presented for Amersil quartz glass. Similar data showing changes in track lengths and in track densities will be presented for mica. Time-temperature regions will be defined where muscovite mica can be accurately applied with negligible correction for thermal annealing

  16. Electron spin resonance in neutron-irradiated graphite. Dependence on temperature and effect of annealing; Resonance paramagnetique du graphite irradie aux neutrons. Variation en fonction de la temperature et experiences de recuit

    Energy Technology Data Exchange (ETDEWEB)

    Kester, T [Commissariat a l' Energie Atomique, Grenoble (France). Centre d' Etudes Nucleaires, Laboratoire de resonance magnetique

    1967-09-01

    The temperature dependence of the electron spin resonance signal from neutron irradiated graphite has been studied. The results lead to an interpretation of the nature of the paramagnetic centers created by irradiation. In annealing experiments on graphite samples, which had been irradiated at low temperature, two annealing peaks and one anti-annealing peak were found. Interpretations are proposed for these peaks. (author) [French] Le graphite irradie aux neutrons a ete etudie par resonance paramagnetique electronique en fonction de la temperature. La nature des centres paramagnetiques crees par irradiation est interpretee a l'aide des resultats. Des experiences de recuit sur des echantillons de graphite irradie a 77 deg. K ont permis de mettre en evidence deux pics de recuit et un pic d'anti-recuit, pour lesquels des interpretations sont proposees. (auteur)

  17. Annealing effect on restoration of irradiation steel properties

    International Nuclear Information System (INIS)

    Vishkarev, O.M.; Kolesova, T.N.; Myasnikova, K.P.; Pecherin, A.M.; Shamardin, V.K.

    1986-01-01

    The effect of temperature and annealing time on the restoration of properties of the 15Kh2NMFAA and 15Kh2MFA steels after irradiation at 285 deg with the fluence of 6x10 23 neutr/m 2 (E>0.5 MeV) is studied. Microhardness (H μ ) restoration in the irradiated 15Kh2NMFAA steel is shown to start from 350 deg C annealing temperature. The complete microhardness restoration is observed at the annealing temperature of 500 deg C for 10 hours

  18. Growth-temperature- and thermal-anneal-induced crystalline reorientation of aluminum on GaAs (100) grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Liu, H. F.; Chua, S. J.; Xiang, N.

    2007-01-01

    The authors investigated the growth of Al thin films on GaAs (100) substrates by molecular beam epitaxy. It is found that the growth at 550 degree sign C results in a texture that consists of (100)Al[010](parallel sign)(100)GaAs[011] and (100)Al[010](parallel sign)(100)GaAs[010] rotated 45 degree sign with respect to each other, while the growth at 300 degree sign C leads to a mixture phase of (100)Al[010](parallel sign)(100)GaAs[011] and (110)Al[001](parallel sign)(100)GaAs[011]. In situ annealing of the Al film grown at 300 degree sign C causes a reorientation of the crystalline from (100)Al[010](parallel sign)(100)GaAs[011] to (110)Al[001](parallel sign)(100)GaAs[011]. The grain sizes of the Al film are increased by the increased growth temperature and in situ annealing; the ratio of the exposed to the covered surface is not changed significantly by changing the growth temperature but decreased by annealing; and the small islands in between the large ones are removed by annealing. These observations are explained based on island migration and coalescence

  19. The effect of annealing temperature on the properties of powder metallurgy processed Ti-35Nb-2Zr-0.5O alloy.

    Science.gov (United States)

    Málek, Jaroslav; Hnilica, František; Veselý, Jaroslav; Smola, Bohumil; Medlín, Rostislav

    2017-11-01

    Ti-35Nb-2Zr-0.5O (wt%) alloy was prepared via a powder metallurgy process (cold isostatic pressing of blended elemental powders and subsequent sintering) with the primary aim of using it as a material for bio-applications. Sintered specimens were swaged and subsequently the influence of annealing temperature on the mechanical and structural properties was studied. Specimens were annealed at 800, 850, 900, 950, and 1000°C for 0.5h and water quenched. Significant changes in microstructure (i.e. precipitate dissolution or grain coarsening) were observed in relation to increasing annealing temperature. In correlation with those changes, the mechanical properties were also studied. The ultimate tensile strength increased from 925MPa (specimen annealed at 800°C) to 990MPa (900°C). Also the elongation increased from ~ 13% (800°C) to more than 20% (900, 950, and 1000°C). Copyright © 2017 Elsevier Ltd. All rights reserved.

  20. The influence of annealing atmosphere on the material properties of sol-gel derived SnO2:Sb films before and after annealing

    International Nuclear Information System (INIS)

    Jeng, Jiann-Shing

    2012-01-01

    SnO 2 films with and without Sb doping were prepared by the sol-gel spin-coating method. Material properties of the SnO 2 films with different Sb contents were investigated before and after annealing under O 2 or N 2 . When SnO 2 films are annealed under N 2 or O 2 , the resistivity decreases with increasing annealing temperature, which may be related to the increased crystallinity and reduced film defects. The intensity of SnO 2 peaks for both O 2 - and N 2 -annealed films increases as the annealing temperature increases. Small nodules are revealed on the surface of SnO 2 films after annealing in N 2 or O 2 atmospheres, and some voids are present on the surface of N 2 -annealed SnO 2 films. After doping with Sb, the resistivity of SnO 2 films after annealing in O 2 is greater than that of N 2 -annealed SnO 2 films. The surface morphology of SnO 2 films incorporating different molar ratios of Sb after annealing are similar to that of as-spun SnO 2 films with adding Sb. There were no voids found on the surfaces of N 2 -annealed SnO 2 :Sb films. In addition, the peak intensity of SnO 2 :Sb films after O 2 -annealing is higher than those films after N 2 -annealing. The chemical binding states and Hall mobility of the high-temperature annealed SnO 2 films without and with adding Sb are also related to the annealing atmospheres. This study discusses the connection among the material properties of the SnO 2 films with different Sb contents and how these properties are influenced by the Sb-doping concentration and the annealing atmospheres of SnO 2 films.

  1. Mechanical properties and annealing texture of zirconium sheets

    International Nuclear Information System (INIS)

    Hanif-ur-Rehman; Khawaja, F.A.

    1996-01-01

    Mechanical properties like yield strength (YS), ultimate tensile strength(UTS), percentage elongation and annealing texture has been studied in sheets of commercially pure zirconium. The YS and UTS decrease as a function of annealing temperature up to 600 V, but both quantities have maximum value in sample annealed at 800 deg. C. The percentage elongation decreased with increase in annealing temperature up to 600 deg. C. A slight decrease and minimum value of percentage elongation was observed at 650 and 800 C respectively. The texture development in the annealed samples has been studied by the X-ray diffraction method. The sampled annealed at 800 deg. C showed a texture component (0001) [01 bar 10] with orientation density of about 8 times random, while the samples annealed at 600,650 and 700 deg. C showed a texture component (0001)[2 bar 110] with orientation density of about 5 times random. Thus it is concluded, that the texture component (0001)[2 bar 110] and (0001)[01 bar 10] at 650 and 800 geg. C respectively, may be the responsible for the increase in YS and UTS and decrease in percentage elongation at these temperatures. (author)

  2. Interpretation of microstructure evolution during self-annealing and thermal annealing of nanocrystalline electrodeposits-A comparative study

    International Nuclear Information System (INIS)

    Pantleon, Karen; Somers, Marcel A.J.

    2010-01-01

    Electrodeposition results in a non-equilibrium state of the as-deposited nanocrystalline microstructure, which evolves towards an energetically more favorable state as a function of time and/or temperature upon deposition. Real-time investigation of the evolving microstructure in copper, silver and nickel electrodeposits was achieved by time-resolved X-ray diffraction line profile analysis and crystallographic texture analysis during room temperature storage and during isothermal annealing at elevated temperatures. These in-situ studies with unique time resolution allowed quantification of the self-annealing kinetics of copper and silver electrodeposits as well as the annealing kinetics of electrodeposited nickel. Similarities and characteristic differences of the kinetics and mechanisms of microstructure evolution in the various electrodeposits are discussed and the experimental results are attempted to be interpreted in terms of recovery, recrystallization and grain growth.

  3. Effect of high temperature annealing on the grain size of CVD-grown SiC and experimental PBMR TRISO coated particles

    CSIR Research Space (South Africa)

    Mokoduwe, SM

    2010-10-01

    Full Text Available in the PBMR fuel SiC layer. square samples were cut from the original sample received from ORNL and prepared for grain size Prague, Czech Republic, October 18 – 2000 °C. These no significant ion of how the 8] also ge is also of tal THODS -Si... for grain size determination Fig. 5: Influence of high temperature annealing on the CVD ORNL polycrystalline 3 C-SiC. Fig. 6: Influence of high temperature annealing on the polycrystalline 3 C-SiC layer of PBMR TRISO CP batches D and E...

  4. MOHOS-type memory performance using HfO{sub 2} nanoparticles as charge trapping layer and low temperature annealing

    Energy Technology Data Exchange (ETDEWEB)

    Molina, Joel, E-mail: jmolina@inaoep.mx [National Institute of Astrophysics, Optics and Electronics. Electronics Department, Luis Enrique Erro 1, Tonantzintla, Puebla 72000 (Mexico); Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso [National Institute of Astrophysics, Optics and Electronics. Electronics Department, Luis Enrique Erro 1, Tonantzintla, Puebla 72000 (Mexico)

    2012-09-20

    Highlights: Black-Right-Pointing-Pointer HfO{sub 2} nanoparticles used as charge trapping layer in MOHOS memory devices. Black-Right-Pointing-Pointer Increasing HfO{sub 2} nanoparticles concentration enhances charge injection and trapping. Black-Right-Pointing-Pointer Enhancement of memory performance with low temperature annealing. Black-Right-Pointing-Pointer Charge injection is done without using any hot-carrier injection mechanism. Black-Right-Pointing-Pointer Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO{sub 2} nanoparticles (np-HfO{sub 2}) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal-oxide-high-k-oxide-silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol-gel spin coating method after using different concentrations of np-HfO{sub 2} and low temperature annealing (down to 425 Degree-Sign C) in order to obtain charge-retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO{sub 2} concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO{sub 2} as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

  5. Annealing of Al implanted 4H silicon carbide

    International Nuclear Information System (INIS)

    Hallen, A; Suchodolskis, A; Oesterman, J; Abtin, L; Linnarsson, M

    2006-01-01

    Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1x10 20 cm -3 . These samples were then annealed at temperatures between 1500 and 1950 deg. C. A similar 4H SiC epitaxial sample was implanted by MeV Al ions to lower doses and annealed only at 200 and 400 deg. C. After annealing, cross-sections of the samples were characterized by scanning spreading resistance microscopy (SSRM). The results show that the resistivity of high-dose Al implanted samples has not reached a saturated value, even after annealing at the highest temperature. For the MeV Al implanted sample, the activation of Al has not yet started, but a substantial annealing of the implantation induced damage can be seen from the SSRM depth profiles

  6. Transitions of microstructure and photoluminescence properties of the Ge/ZnO multilayer films in certain annealing temperature region

    International Nuclear Information System (INIS)

    Zheng Tianhang; Li Ziquan; Chen Jiankang; Shen Kai; Sun Kefei

    2006-01-01

    The Ge/ZnO multilayer films have been prepared by rf magnetron sputtering. The effects of annealing on the microstructure and photoluminescence properties of the multilayers have been investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier-transform infrared (FTIR) spectrometry and photoluminescence (PL) spectrometry. The investigation of structural properties indicates that Zn 2 GeO 4 has been formed with (220) texture and Zn deficiency from Ge/ZnO multilayer films in the process of annealing. However, lower Zn/Ge ratio can be improved by annealing. The annealed multilayers show three main emission bands at 532, 700, and 761nm, which originate from the transition between oxygen vacancy (V o * ) and Zn vacancies (V Zn ), the radiative recombination of quantum-confined excitons (QCE) in Ge nanocrystals, and the optical transition in the GeO color centers, respectively. Finally, the fabrication of thin film Zn 2 GeO 4 from Ge/ZnO multilayer films by annealing at low temperature provides another approach to prepare the green-emitting oxide phosphor film:Zn 2 GeO 4 :Mn

  7. The effect of annealing temperature on the optical properties of a ruthenium complex thin film

    Energy Technology Data Exchange (ETDEWEB)

    Ocakoglu, Kasim, E-mail: kasim.ocakoglu@mersin.edu.tr [Advanced Technology Research & Application Center, Mersin University, TR-33343, Yenisehir, Mersin (Turkey); Department of Energy Systems Engineering, Faculty of Technology, Mersin University, TR-33480 Mersin (Turkey); Okur, Salih, E-mail: salih.okur@ikc.edu.tr [Department of Materials Science and Engineering, Faculty of Engineering and Architecture, Izmir Katip Celebi University, Izmir (Turkey); Aydin, Hasan [Izmir Institute of Technology, Department of Material Science and Engineering, Gulbahce Campus, 35430, Urla, Izmir (Turkey); Emen, Fatih Mehmet [Faculty of Arts and Sciences, Department of Chemistry, Mehmet Akif Ersoy University, TR-15030 Burdur (Turkey)

    2016-08-01

    The stability of the optical parameters of a ruthenium polypyridyl complex (Ru-PC K314) film under varying annealing temperatures between 278 K and 673 K was investigated. The ruthenium polypyridyl complex thin film was prepared on a quartz substrate by drop casting technique. The transmission of the film was recorded by using Ultraviolet/Visible/Near Infrared spectrophotometer and the optical band gap energy of the as-deposited film was determined around 2.20 eV. The optical parameters such as refractive index, extinction coefficient, and dielectric constant of the film were determined and the annealing effect on these parameters was investigated. The results show that Ru PC K314 film is quite stable up to 595 K, and the rate of the optical band gap energy change was found to be 5.23 × 10{sup −5} eV/K. Furthermore, the thermal analysis studies were carried out in the range 298–673 K. The Differential Thermal Analysis/Thermal Gravimmetry/Differantial Thermal Gravimmetry curves show that the decomposition is incomplete in the temperature range 298–673 K. Ru-PC K314 is thermally stable up to 387 K. The decomposition starts at 387 K with elimination of functional groups such as CO{sub 2}, CO molecules and SO{sub 3}H group was eliminated between 614 K and 666 K. - Highlights: • Optical parameters of a ruthenium polypyridyl complex film under varying annealing temperatures • The film is quite stable up to 573 K. • The rate of change of optical energy gap was obtained as 5.23 × 10{sup −5} eV/K.

  8. Annealing behavior of solution grown polyethylene single crystals

    NARCIS (Netherlands)

    Loos, J.; Tian, M.

    2006-01-01

    The morphology evolution of solution grown polyethylene single crystals has been studied upon annealing below their melting temperature by using atomic force microscopy (AFM). AFM investigations have been performed ex situ, which means AFM investigations at room temperature after the annealing

  9. Annealing behavior and shape memory effect in NiTi alloy processed by equal-channel angular pressing at room temperature

    International Nuclear Information System (INIS)

    Shahmir, Hamed; Nili-Ahmadabadi, Mahmoud; Wang, Chuan Ting; Jung, Jai Myun; Kim, Hyoung Seop; Langdon, Terence G.

    2015-01-01

    A martensitic NiTi shape memory alloy was processed successfully by equal-channel angular pressing (ECAP) for one pass at room temperature using a core–sheath billet design. The annealing behavior and shape memory effect of the ECAP specimens were studied followed by post-deformation annealing (PDA) at 673 K for various times. The recrystallization and structural evolution during annealing were investigated by differential scanning calorimetry, dilatometry, X-ray diffraction, transmission electron microscopy and microhardness measurements. The results indicate that the shape memory effect improves by PDA after ECAP processing. Annealing for 10 min gives a good shape memory effect which leads to a maximum in recoverable strain of 6.9 pct upon heating where this is more than a 25 pct improvement compared with the initial state

  10. Effect of Annealing Temperature on the Ballistic Limit Velocity of Ti-6A1-4V ELI

    National Research Council Canada - National Science Library

    Burkins, M

    1997-01-01

    .... Army Research Laboratory (ARL) and the RMI Titanium Company (RMI) performed a joint research program to evaluate the effect of annealing temperature on Ti-6A1-4V alloy, extra-low interstitial (ELI...

  11. Influence of Annealing on the Depth Microstructure of the Shot Peened Duplex Stainless Steel at Elevated Temperature

    Science.gov (United States)

    Feng, Qiang; She, Jia; Xiang, Yong; Wu, Xianyun; Wang, Chengxi; Jiang, Chuanhai

    The depth profiles of residual stresses and lattice parameters in the surface layers of shot peened duplex stainless steel at elevated temperature were investigated utilizing X-ray diffraction analysis. At each deformation depth, residual stress distributions in both ferrite and austenite were studied by X-ray diffraction stress analysis which is performed on the basis of the sin2ψ method and the lattice parameters were explored by Rietveld method. The results reveal that difference changes of depth residual compressive stress profiles between ferrite and austenite under the same annealing condition are resulted from the diverse coefficient of thermal expansion, dislocation density, etc. for different phases in duplex stainless steel. The relaxations of depth residual stresses in austenite are more obvious than those in ferrite. The lattice parameters decrease in the surface layer with the extending of annealing time, however, they increase along the depth after annealing for 16min. The change of the depth lattice parameters can be ascribed to both thermal expansion and the relaxation of residual stress. The different changes of microstructure at elevated temperature between ferrite and austenite are discussed.

  12. Post-annealing effects on pulsed laser deposition-grown GaN thin films

    International Nuclear Information System (INIS)

    Cheng, Yu-Wen; Wu, Hao-Yu; Lin, Yu-Zhong; Lee, Cheng-Che; Lin, Ching-Fuh

    2015-01-01

    In this work, the post-annealing effects on gallium nitride (GaN) thin films grown from pulsed laser deposition (PLD) are investigated. The as-deposited GaN thin films grown from PLD are annealed at different temperatures in nitrogen ambient. Significant changes of the GaN crystal properties are observed. Raman spectroscopy is used to observe the crystallinity, the change of residual stress, and the thermal decomposition of the annealed GaN thin films. X-ray diffraction is also applied to identify the crystal phase of GaN thin films, and the surface morphology of GaN thin films annealed at different temperatures is observed by scanning electron microscopy. Through the above analyses, the GaN thin films grown by PLD undergo three stages: phase transition, stress alteration, and thermal decomposition. At a low annealing temperature, the rock salt GaN in GaN films is transformed into wurtzite. The rock salt GaN diminishes with increasing annealing temperature. At a medium annealing temperature, the residual stress of the film changes significantly from compressive strain to tensile strain. As the annealing temperature further increases, the GaN undergoes thermal decomposition and the surface becomes granular. By investigating the annealing temperature effects and controlling the optimized annealing temperature of the GaN thin films, we are able to obtain highly crystalline and strain-free GaN thin films by PLD. - Highlights: • The GaN thin film is grown on sapphire by pulsed laser deposition. • The GaN film undergoes three stages with increasing annealing temperature. • In the first stage, the film transfers from rock salt to wurtzite phase. • In the second stage, the stress in film changes from compressive to tensile. • In the final stage, the film thermally decomposes and becomes granular

  13. High temperature annealing effects on chromel (Ni90Cr10) thin films and interdiffusion study for sensing applications

    International Nuclear Information System (INIS)

    Datta, Arindom; Cheng Xudong; Miller, Michael A.; Li Xiaochun

    2008-01-01

    Metal embedded thin film thermocouples are very attractive for various applications in harsh environments. One promising technique to embed thin films micro sensors is diffusion bonding, which requires high temperatures and pressures typically in a vacuum. In this study, high temperature annealing effects on chromel (Ni90Cr10) thin film, an important sensor material as one of the components in type K thermocouple, were investigated in a diffusion bonding environment. Annealing was carried out at 800 deg. C for one hour in a diffusion bonder under vacuum without applying pressure. Under such conditions; surface, interface and interdiffusion phenomena were investigated using different characterization techniques including X-ray Diffraction, X-ray Photoelectron Spectroscopy, Scanning Electron Microscopy, and Energy Dispersive Spectroscopy. Results indicate that the present combination of dielectrics is quite reliable and Ni90Cr10 films of 500 nm thickness can be used for applications at least up to 800 deg. C due to a protective thin chromium oxide layer formation on top of the sensor film during annealing

  14. Hydrogen Annealing Of Single-Crystal Superalloys

    Science.gov (United States)

    Smialek, James L.; Schaeffer, John C.; Murphy, Wendy

    1995-01-01

    Annealing at temperature equal to or greater than 2,200 degrees F in atmosphere of hydrogen found to increase ability of single-crystal superalloys to resist oxidation when subsequently exposed to oxidizing atmospheres at temperatures almost as high. Supperalloys in question are principal constituents of hot-stage airfoils (blades) in aircraft and ground-based turbine engines; also used in other high-temperature applications like chemical-processing plants, coal-gasification plants, petrochemical refineries, and boilers. Hydrogen anneal provides resistance to oxidation without decreasing fatigue strength and without need for coating or reactive sulfur-gettering constituents. In comparison with coating, hydrogen annealing costs less. Benefits extend to stainless steels, nickel/chromium, and nickel-base alloys, subject to same scale-adhesion and oxidation-resistance considerations, except that scale is chromia instead of alumina.

  15. Dielectric response of capacitor structures based on PZT annealed at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kamenshchikov, Mikhail V., E-mail: Mikhailkamenshchikov@yandex.ru [Tver State University, 170002, Tver (Russian Federation); Solnyshkin, Alexander V. [Tver State University, 170002, Tver (Russian Federation); Pronin, Igor P. [Ioffe Institute, 194021, St. Petersburg (Russian Federation)

    2016-12-09

    Highlights: • Correlation of the microstructure of PZT films and dielectric response was found. • Difference of dielectric responses under low and high bias is caused by domains. • Internal fields is discussed on the basis of the space charges. • Dependences of PZT films characteristics on synthesis temperature are extremal. - Abstract: Dielectric response of thin-film capacitor structures of Pt/PZT/Pt deposited by the RF magnetron sputtering method and annealed at temperatures of 540–570 °C was investigated. It was found that dielectric properties of these structures depend on the synthesis temperature. Stability of a polarized state is considered on the basis of the analysis of hysteresis loops and capacitance–voltage (C–V) characteristics. The contribution of the domain mechanism in the dielectric response of the capacitor structure comprising a ferroelectric is discussed. Extreme dependences of electrophysical characteristics of PZT films on their synthesis temperature were observed. Correlation of dielectric properties with microstructure of these films is found out.

  16. Iron phthalocyanine on Cu(111): Coverage-dependent assembly and symmetry breaking, temperature-induced homocoupling, and modification of the adsorbate-surface interaction by annealing.

    Science.gov (United States)

    Snezhkova, Olesia; Bischoff, Felix; He, Yuanqin; Wiengarten, Alissa; Chaudhary, Shilpi; Johansson, Niclas; Schulte, Karina; Knudsen, Jan; Barth, Johannes V; Seufert, Knud; Auwärter, Willi; Schnadt, Joachim

    2016-03-07

    We have examined the geometric and electronic structures of iron phthalocyanine assemblies on a Cu(111) surface at different sub- to mono-layer coverages and the changes induced by thermal annealing at temperatures between 250 and 320 °C by scanning tunneling microscopy, x-ray photoelectron spectroscopy, and x-ray absorption spectroscopy. The symmetry breaking observed in scanning tunneling microscopy images is found to be coverage dependent and to persist upon annealing. Further, we find that annealing to temperatures between 300 and 320 °C leads to both desorption of iron phthalocyanine molecules from the surface and their agglomeration. We see clear evidence of temperature-induced homocoupling reactions of the iron phthalocyanine molecules following dehydrogenation of their isoindole rings, similar to what has been observed for related tetrapyrroles on transition metal surfaces. Finally, spectroscopy indicates a modified substrate-adsorbate interaction upon annealing with a shortened bond distance. This finding could potentially explain a changed reactivity of Cu-supported iron phthalocyanine in comparison to that of the pristine compound.

  17. Effects of annealing on tensile property and corrosion behavior of Ti-Al-Zr alloy

    International Nuclear Information System (INIS)

    Kim, Tae-Kyu; Choi, Byung-Seon; Jeong, Yong-Hwan; Lee, Doo-Jeong; Chang, Moon-Hee

    2002-01-01

    The effects of annealing on the tensile property and corrosion behavior of Ti-Al-Zr alloy were evaluated. The annealing in the temperature range from 500 to 800 deg. C for 1 h induced the growth of the grain and the precipitate sizes. The results of tensile tests at room temperature showed that the strengths and the ductility were almost independent of the annealing temperature. However, the results of corrosion test in an ammonia aqueous solution of pH 9.98 at 360 deg. C showed that the corrosion resistance depended on the annealing temperature, and the corrosion rate was accelerated with increasing annealing temperature. Hydrogen contents absorbed during the corrosion test of 220 days also increased with the annealing temperature. It could be attributed to the growth of Fe-rich precipitates by annealing. It is thus suggested that the lower annealing temperatures provide the better corrosion properties without degrading the tensile properties

  18. Advanced processing of gallium nitride and gallium nitride-based devices: Ultra-high temperature annealing and implantation incorporation

    Science.gov (United States)

    Yu, Haijiang

    This dissertation is focused on three fields: ultra-high temperature annealing of GaN, activation of implanted GaN and the implantation incorporation into AlGaN/GaN HEMT processing, with an aim to increase the performance, manufacturability and reliability of AlGaN/GaN HEMTs. First, the ultra high temperature (around 1500°C) annealing of MOCVD grown GaN on sapphire has been studied, and a thermally induced threading dislocation (TD) motion and reaction are reported. Using a rapid thermal annealing (RTA) approach capable of heating 2 inch wafers to around 1500°C with 100 bar N2 over-pressure, evidence of dislocation motion was first observed in transmission electron microscopy (TEM) micrographs of both planar and patterned GaN films protected by an AIN capping layer. An associated decrease in x-ray rocking curve (XRC) full-width-half-maximum (FWHM) was also observed for both the symmetric and asymmetric scans. After annealing, the AIN capping layer remained intact, and optical measurements showed no degradation of the opto-electronic properties of the films. Then activation annealing of Si implants in MOCVD grown GaN has been studied for use in ohmic contacts. Si was implanted in semi-insulating GaN at 100 keV with doses from 5 x 1014 cm-2 to 1.5 x 1016 cm-2. Rapid thermal annealing at 1500°C with 100 bar N2 over-pressure was used for dopant activation, resulting in a minimum sheet resistance of 13.9 O/square for a dose of 7 x 1015 cm-2. Secondary ion mass spectroscopy measurements showed a post-activation broadening of the dopant concentration peak by 20 nm (at half the maximum), while X-Ray triple axis o-2theta scans indicated nearly complete implant damage recovery. Transfer length method measurements of the resistance of Ti/Al/Ni/Au contacts to activated GaN:Si (5 x 1015 cm-2 at 100 keV) indicated lowest contact resistances of 0.07 Omm and 0.02 Omm for as-deposited and subsequently annealed contacts, respectively. Finally, the incorporation of Si implantation

  19. Influence of annealing temperature and organic dyes as sensitizers on sol–gel derived TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Rani, Mamta; Abbas, Saeed J.; Tripathi, S.K., E-mail: surya@pu.ac.in

    2014-09-15

    Highlights: • Preparation of rice shaped TiO{sub 2} nanorods with anatase structure by sol–gel method. • Effect of post deposition annealing on structural properties of TiO{sub 2} is studied. • Unlike individual dye, absorption of Cocktail dye with TiO{sub 2} nanorods is broader. • Cocktail dye sensitized TiO{sub 2} film has more photosensitivity than EY, RB, AO. • Increase in photosensitivity up to optimum temperature is due to hole passivation. - Abstract: Five different organic dyes and reported cocktail dye composed of these dyes are used as sensitizer for titanium dioxide (TiO{sub 2}). Rice shaped (TiO{sub 2}) nanorods are prepared by using sol–gel method. The films annealed at 673 K and above are crystalline with anatase structure. The effect of post annealing temperature is studied on various structural parameters. Cocktail dye shows broader absorption with TiO{sub 2} nanorods in visible region compared with five dyes. Maximum photosensitivity is obtained with RhB dye, followed by FGF and cocktail dye sensitized TiO{sub 2} films. Increase in photosensitivity is due to passivating some hole traps on the surface up to some optimum temperature, above which photosensitivity decreases due to a higher photo activation energy compared to dark conductivity in low temperature region and also may be due to damage of the dye molecule. This work may prove its worth for understanding the electron transport in dye sensitized nanodevices.

  20. Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

    OpenAIRE

    Fay, Mike W.; Han, Y.; Brown, Paul D.; Harrison, Ian; Hilton, K.P.; Munday, A.; Wallis, D.; Balmer, R.S.; Uren, M.J.; Martin, T.

    2008-01-01

    The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is\\ud examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:T...

  1. Preparation of atomically clean and flat Si(1 0 0) surfaces by low-energy ion sputtering and low-temperature annealing

    International Nuclear Information System (INIS)

    Kim, J.C.; Ji, J.-Y.; Kline, J.S.; Tucker, J.R.; Shen, T.-C.

    2003-01-01

    Si(1 0 0) surfaces were prepared by wet-chemical etching followed by 0.3-1.5 keV Ar ion sputtering, either at elevated or room temperature (RT). After a brief anneal under ultrahigh vacuum (UHV) conditions, the resulting surfaces were examined by scanning tunneling microscopy. We find that wet-chemical etching alone cannot produce a clean and flat Si(1 0 0) surface. However, subsequent 300 eV Ar ion sputtering at room temperature followed by a 700 deg. C anneal yields atomically clean and flat Si(1 0 0) surfaces suitable for nanoscale device fabrication

  2. Placement by thermodynamic simulated annealing

    International Nuclear Information System (INIS)

    Vicente, Juan de; Lanchares, Juan; Hermida, Roman

    2003-01-01

    Combinatorial optimization problems arise in different fields of science and engineering. There exist some general techniques coping with these problems such as simulated annealing (SA). In spite of SA success, it usually requires costly experimental studies in fine tuning the most suitable annealing schedule. In this Letter, the classical integrated circuit placement problem is faced by Thermodynamic Simulated Annealing (TSA). TSA provides a new annealing schedule derived from thermodynamic laws. Unlike SA, temperature in TSA is free to evolve and its value is continuously updated from the variation of state functions as the internal energy and entropy. Thereby, TSA achieves the high quality results of SA while providing interesting adaptive features

  3. Annealing temperature and environment effects on ZnO nanocrystals embedded in SiO2: a photoluminescence and TEM study.

    Science.gov (United States)

    Pita, Kantisara; Baudin, Pierre; Vu, Quang Vinh; Aad, Roy; Couteau, Christophe; Lérondel, Gilles

    2013-12-06

    We report on efficient ZnO nanocrystal (ZnO-NC) emission in the near-UV region. We show that luminescence from ZnO nanocrystals embedded in a SiO2 matrix can vary significantly as a function of the annealing temperature from 450°C to 700°C. We manage to correlate the emission of the ZnO nanocrystals embedded in SiO2 thin films with transmission electron microscopy images in order to optimize the fabrication process. Emission can be explained using two main contributions, near-band-edge emission (UV range) and defect-related emissions (visible). Both contributions over 500°C are found to be size dependent in intensity due to a decrease of the absorption cross section. For the smallest-size nanocrystals, UV emission can only be accounted for using a blueshifted UV contribution as compared to the ZnO band gap. In order to further optimize the emission properties, we have studied different annealing atmospheres under oxygen and under argon gas. We conclude that a softer annealing temperature at 450°C but with longer annealing time under oxygen is the most preferable scenario in order to improve near-UV emission of the ZnO nanocrystals embedded in an SiO2 matrix.

  4. Unified model of damage annealing in CMOS, from freeze-in to transient annealing

    International Nuclear Information System (INIS)

    Sander, H.H.; Gregory, B.L.

    Results of an experimental study at 76 0 K, are presented showing that radiation-produced holes in SiO 2 are immobile at this temperature. If an electric field is present in the SiO 2 during low temperature (76 0 K) irradiation to sweep out the mobile electrons, the holes will virtually all be trapped where created and produce a uniform positive charge density in the oxide. These results are the basis for concluding that if a complimentary p,n metal-oxide semiconductor (CMOS) device is irradiated for sufficient time at 76 0 K to build-in an appreciable field, further irradiation with gate bias removed will produce very little additional change in V/sub th/, since the field in the oxide tends to keep all generated electrons in the oxide where they recombine with trapped holes. Hence the hole trapping rate = the hole annihilation rate. The room-temperature annealing following a pulsed gamma exposure occurs in two regimes. The first recovery of V/sub th/ occurs prior to 10 -4 seconds. The magnitude of this very early-time recovery, at room temperature, is oxide-dependent, and oxide process dependent. The rate-of-annealing is what is truly different between a rad-hard and a rad-soft device, since annealing in the hardest devices occurs very quickly at room temperature. (U.S.)

  5. Analyses of residual iron in carbon nanotubes produced by camphor/ferrocene pyrolysis and purified by high temperature annealing

    Energy Technology Data Exchange (ETDEWEB)

    Antunes, E.F., E-mail: ericafa@las.inpe.br [Instituto Tecnologico de Aeronautica (ITA), Praca Marechal Eduardo Gomes, 50, CEP 12.228-900, Sao Jose dos Campos, SP (Brazil); Instituto Nacional de Pesquisas Espaciais (INPE), Av. dos Astronautas, 1758, CEP 12.227-010, Sao Jose dos Campos, SP (Brazil); Resende, V.G. de; Mengui, U.A. [Instituto Nacional de Pesquisas Espaciais (INPE), Av. dos Astronautas, 1758, CEP 12.227-010, Sao Jose dos Campos, SP (Brazil); Cunha, J.B.M. [Universidade Federal do Rio Grande do Sul (UFRGS), Av. Bento Goncalves, 9500, CEP 91.501-970, Porto Alegre, RS (Brazil); Corat, E.J.; Massi, M. [Instituto Nacional de Pesquisas Espaciais (INPE), Av. dos Astronautas, 1758, CEP 12.227-010, Sao Jose dos Campos, SP (Brazil)

    2011-07-01

    A detailed analysis of iron-containing phases in multiwall carbon nanotube (MWCNT) powder was carried out. The MWCNTs were produced by camphor/ferrocene and purified by high temperature annealing in an oxygen-free atmosphere (N{sub 2} or VC). Thermogravimetric analysis, Moessbauer spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy enabled the evaluation of the residual iron in MWCNTs after purification. The VC treatments provided MWCNTs with a purity degree higher than 99%. Moreover, Raman spectroscopy revealed a significant improvement in graphitic ordering after thermal annealing. A brief description of the mechanism of iron removal was included. We highlight the mobility of iron atoms through graphitic sheets and the large contact angle of iron clusters formed on MWCNT surfaces at high temperatures.

  6. Structural relaxation in annealed hyperquenched basaltic glasses

    DEFF Research Database (Denmark)

    Guo, Xiaoju; Mauro, John C.; Potuzak, M.

    2012-01-01

    The enthalpy relaxation behavior of hyperquenched (HQ) and annealed hyperquenched (AHQ) basaltic glass is investigated through calorimetric measurements. The results reveal a common onset temperature of the glass transition for all the HQ and AHQ glasses under study, indicating that the primary...... relaxation is activated at the same temperature regardless of the initial departure from equilibrium. The analysis of secondary relaxation at different annealing temperatures provides insights into the enthalpy recovery of HQ glasses....

  7. Thermoluminescence of annealed and shock-loaded feldspar

    International Nuclear Information System (INIS)

    Hartmetz, C.P.

    1988-01-01

    Samples of oligoclase and bytownite were shock-loaded to a variety of pressures, and annealed for a variety of temperatures and times. The effect of Mrad doses of gamma-rays on oligoclase TL were also studied. After these treatments, thermoluminescence (TL) and X-ray diffraction (XRD) measurements were made to: (1) determine the effects of shock on terrestrial feldspar and compare with variations in the TL emission of ordinary chondrites (OCs); (2) determine if disordering in feldspar was responsible for any related changes in TL properties of OCs; (3) determine if the combined effect of shock plus annealing causes the changes in TL properties; (4) see if radiation damage from cosmic ray exposure plays a role in the TL variations; (5) examine the implications of this work to the thermal and shock histories of OCs. The lightly shock-loaded and annealed oligoclase samples have a dominant peak temperature of 120-140 C, identical to type 3.3-3.5 OCs. The heavily shocked samples dominant peak is at 230C, similar to type > 3.5 OCs . While the heavily annealed/disordered oligoclase samples have a peak at 280C, this peak is rarely observed in OCs. Radiation damage from Mrad doses of gamma-rays produced no change in peak temperature, but facilitated the shift to higher peak temperatures. The TL sensitivity of the shocked samples decreased by a factor of 25. Samples annealed at low temperatures (438-533C) showed a factor of 2 decrease in TL, but at the highest temperatures, the TL was a factor of 8 higher

  8. Effect of Annealing Temperature on the Microstructure, Tensile Properties, and Fracture Behavior of Cold-Rolled High-Mn Light-Weight Steels

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jae-Hyun; Cho, Kyung Mox [Pusan National University, Busan (Korea, Republic of); Park, Seong-Jun; Moon, Joonoh; Kang, Jun-Yun; Park, Jun-Young; Lee, Tae-Ho [Korea Institute of Materials Science, Changwon (Korea, Republic of)

    2017-05-15

    The effects of the annealing temperature on the microstructure and tensile properties of cold-rolled light-weight steels are investigated using two Fe-30Mn-xAl-0.9C alloys that contain different Al content. The initial alloy microstructure is composed of a single austenite or a mixture of austenite and ferrite depending on the nominal aluminum content. For the alloy with 9 wt%Al content, the recrystallization and grain growth of austenite occurrs depending on the annealing temperature. However, for the alloy with 11 wt%Al content, the β-Mn phase is observed after annealing for 10 min at 550~800 ℃. The β-Mn transformation kinetics is the fastest at 700 ℃. The formation of the β-Mn phase has a detrimental effect on the ductility, and this leads to significant decreases in the total elongation. The same alloy also forms κ-carbide and DO3 ordering at 550~900 ℃. The investigated alloys exhibit a fully recrystallized microstructure after annealing at 900 ℃ for 10 min, which results in a high total elongation of 25~55%with a high tensile strength of 900~1170 MPa.

  9. Stored energy and annealing behavior of heavily deformed aluminium

    DEFF Research Database (Denmark)

    Kamikawa, Naoya; Huang, Xiaoxu; Kondo, Yuka

    2012-01-01

    It has been demonstrated in previous work that a two-step annealing treatment, including a low-temperature, long-time annealing and a subsequent high-temperature annealing, is a promising route to control the microstructure of a heavily deformed metal. In the present study, structural parameters...... are quantified such as boundary spacing, misorientation angle and dislocation density for 99.99% aluminium deformed by accumulative roll-bonding to a strain of 4.8. Two different annealing processes have been applied; (i) one-step annealing for 0.5 h at 100-400°C and (ii) two-step annealing for 6 h at 175°C...... followed by 0.5 h annealing at 200-600°C, where the former treatment leads to discontinuous recrystallization and the latter to uniform structural coarsening. This behavior has been analyzed in terms of the relative change during annealing of energy stored as elastic energy in the dislocation structure...

  10. Annealing effects on resistivity and Hall coefficient of neutron irradiated silicon

    International Nuclear Information System (INIS)

    Biggeri, U.

    1995-01-01

    High Temperature Annealing (HTA) treatment has been carried out on fast-neutron irradiated silicon samples with temperatures up to 300 C. Fluences of irradiation up to 1x10 14 n/cm 2 were used. Before annealing, samples irradiated with fluences higher than 1x10 13 n/cm 2 suffered the type conductivity inversion from n-type to p-type. The changes in the resisitivity and Hall coefficient during each annealing step have been measured by Hall effect analysis. Results indicate the possible creation of acceptors for low temperature annealing up to 150 C and the phosphorous release by E centres at annealing temperatures among 150 C and 200 C. Heating samples up to 300 C allows the recovering of the sample resistivity to its value before irradiation, with the peculiarity that bulks inverted to p-type after irradiation does not come back to n-type after annealing. (orig.)

  11. Simulated annealing with constant thermodynamic speed

    International Nuclear Information System (INIS)

    Salamon, P.; Ruppeiner, G.; Liao, L.; Pedersen, J.

    1987-01-01

    Arguments are presented to the effect that the optimal annealing schedule for simulated annealing proceeds with constant thermodynamic speed, i.e., with dT/dt = -(v T)/(ε-√C), where T is the temperature, ε- is the relaxation time, C ist the heat capacity, t is the time, and v is the thermodynamic speed. Experimental results consistent with this conjecture are presented from simulated annealing on graph partitioning problems. (orig.)

  12. Effects of annealing on the corrosion behavior and mechanical properties of Ti-Al-V alloy

    International Nuclear Information System (INIS)

    Kim, T. K.; Choi, B. S.; Baek, J. H.; Choi, B. K.; Jeong, Y. H.; Lee, D. J.; Jang, M. H.; Jeong, Y. H.

    2002-01-01

    In order to determine the annealing condition after cold rolling, the effects of annealing on the corrosion behavior and mechanical properties of Ti-Al-V alloy were evaluated. The results of tensile tests at room temperature showed that the strengths and the ductility were almost independent of the annealing temperature. The results of hardness test also revealed that the hardness was independent of the annealing, However, the results of corrosion test in an ammoniated water of pH 9.98 at 360 .deg. C showed that the corrosion resistance depended on the annealing temperature, and the corrosion rate was accelerated with increasing annealing temperature. Hydrogen contents absorbed during the corrosion test of 120 days also increased with the annealing temperature. It may be attributed to the growth of α' precipitates by annealing. It is thus suggested that the lower annealing temperatures provide the better corrosion properties without degrading the tensile properties

  13. Rapid thermal annealing of phosphorus implanted silicon

    International Nuclear Information System (INIS)

    Lee, Y.H.; Pogany, A.; Harrison, H.B.; Williams, J.S.

    1985-01-01

    Rapid thermal annealing (RTA) of phosphorus-implanted silicon has been investigated by four point probe, Van der Pauw methods and transmission electron microscopy. The results have been compared to furnace annealing. Experiments show that RTA, even at temperatures as low as 605 deg C, results in good electrical properties with little remnant damage and compares favourably with furnace annealing

  14. Tunable metal-insulator transitions in bilayer graphene by thermal annealing

    OpenAIRE

    Kalon, Gopinadhan; Shin, Young Jun; Yang, Hyunsoo

    2012-01-01

    Tunable and highly reproducible metal-insulator transitions have been observed in bilayer graphene upon thermal annealing at 400 K under high vacuum conditions. Before annealing, the sample is metallic in the whole temperature regime of study. Upon annealing, the conductivity changes from metallic to that of an insulator and the transition temperature is a function of annealing time. The pristine metallic state can be reinstated by exposing to air thereby inducing changes in the electronic pr...

  15. Change of Composition in Metallic Fuel Slug of U-Zr Alloy from High-Temperature Annealing

    Energy Technology Data Exchange (ETDEWEB)

    Youn, Young Sang; Lee, Jeong Mook; Kim, Jong Yun; Kim, Jong Hwan; Song, Hoon [KAERI, Daejeon (Korea, Republic of)

    2016-09-15

    The U–Zr alloy is a candidate for fuel to be used as metallic fuel in sodium-cooled fast reactors (SFRs). Its chemical composition before and after annealing at the operational temperature of SFRs (610 .deg. C) was investigated using X-ray photoelectron spectroscopy, Raman spectroscopy, and X-ray diffraction. The original alloy surface contained uranium oxides with the U(IV) and U(VI) oxidation states, Zr{sub 2}O{sub 3}, and a low amount of uranium metal. After annealing at 610 .deg. C, the alloy was composed of uranium metal, uranium carbide, uranium oxide with the U(V) valence state, zirconium metal, and amorphous carbon. Meanwhile, X-ray diffraction data indicate that the bulk composition of the alloy remained unchanged.

  16. Change of Composition in Metallic Fuel Slug of U-Zr Alloy from High-Temperature Annealing

    International Nuclear Information System (INIS)

    Youn, Young Sang; Lee, Jeong Mook; Kim, Jong Yun; Kim, Jong Hwan; Song, Hoon

    2016-01-01

    The U–Zr alloy is a candidate for fuel to be used as metallic fuel in sodium-cooled fast reactors (SFRs). Its chemical composition before and after annealing at the operational temperature of SFRs (610 .deg. C) was investigated using X-ray photoelectron spectroscopy, Raman spectroscopy, and X-ray diffraction. The original alloy surface contained uranium oxides with the U(IV) and U(VI) oxidation states, Zr 2 O 3 , and a low amount of uranium metal. After annealing at 610 .deg. C, the alloy was composed of uranium metal, uranium carbide, uranium oxide with the U(V) valence state, zirconium metal, and amorphous carbon. Meanwhile, X-ray diffraction data indicate that the bulk composition of the alloy remained unchanged

  17. Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition.

    Science.gov (United States)

    Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng; Wang, Yongte

    2017-12-01

    La 2 O 3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La 2 O 3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La 2 O 3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La 2 O 3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La 2 O 3 . Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La 2 O 3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

  18. Isothermal annealing of silicon implanted with 50 keV 10B ions

    International Nuclear Information System (INIS)

    Weidner, B.; Zaschke, G.

    1974-01-01

    Isothermal annealing characteristics of silicon implanted with boron were measured and compared with calculated results. Implantation was performed with 50 keV 10 B ions in the dose range of 7.5 x 10 12 cm -2 to 2.0 x 10 15 cm -2 . Annealing temperatures ranged from 700 to 900 0 C. Maximum annealing time was 10 4 minutes. Annealing time strongly increases with increasing dose and decreasing temperature. Assuming that there is only one activation energy the isothermal annealing curves of constant dose and different temperatures were combined to a reduced annealing curve and the reduced isothermal annealing curve calculated. Starting from first order kinetics, considering the doping profile of boron in silicon and assuming a depth-dependent decay constant the experimentally determined annealing curves could be easily described over the total dose and time range

  19. Pattern Laser Annealing by a Pulsed Laser

    Science.gov (United States)

    Komiya, Yoshio; Hoh, Koichiro; Murakami, Koichi; Takahashi, Tetsuo; Tarui, Yasuo

    1981-10-01

    Preliminary experiments with contact-type pattern laser annealing were made for local polycrystallization of a-Si, local evaporation of a-Si and local formation of Ni-Si alloy. These experiments showed that the mask patterns can be replicated as annealed regions with a resolution of a few microns on substrates. To overcome shortcomings due to the contact type pattern annealing, a projection type reduction pattern laser annealing system is proposed for resistless low temperature pattern forming processes.

  20. Microstructure and Dielectric Properties of LPCVD/CVI-SiBCN Ceramics Annealed at Different Temperatures

    Directory of Open Access Journals (Sweden)

    Jianping Li

    2017-06-01

    Full Text Available SiBCN ceramics were introduced into porous Si3N4 ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N2 atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si3N4 and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si3N4. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries.

  1. Effect of annealing temperature on structural, morphology and dielectric properties of La0.75Ba0.25FeO3 perovskite

    Science.gov (United States)

    Abdallah, F. B.; Benali, A.; Triki, M.; Dhahri, E.; Graça, M. P. F.; Valente, M. A.

    2018-05-01

    The effect of annealing temperature on the structure, morphology and dielectric properties of La0.75Ba0.25FeO3 compound prepared by the sol-gel method was investigated. The increase of the annealing temperature from 900 to 1100 °C, promotes an increase of the average grain size value. Two dielectric relaxations are detected using the dielectric modulus formalism, attributed to grain and grain boundary relaxations. This behavior was confirmed by both Nyquist and Argand's plots of dielectric impedance and Modulus results at different measuring temperatures. The ac conductivity could be described by Jonscher's power law revealing the presence of both overlapping large polaron tunneling and non-overlapping small polaron tunneling mechanisms.

  2. Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

    NARCIS (Netherlands)

    Fujii, M.; Ishikawa, Y.; Ishihara, R.; Van der Cingel, J.; Mofrad, M.R.T.; Horita, M.; Uraoka, Y.

    2013-01-01

    In this study, we successfully achieved a relatively high field-effect mobility of 37.7?cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50?°C

  3. The effects of incomplete annealing on the temperature dependence of sheet resistance and gage factor in aluminum and phosphorus implanted silicon on sapphire

    Science.gov (United States)

    Pisciotta, B. P.; Gross, C.

    1976-01-01

    Partial annealing of damage to the crystal lattice during ion implantation reduces the temperature coefficient of resistivity of ion-implanted silicon, while facilitating controlled doping. Reliance on this method for temperature compensation of the resistivity and strain-gage factor is discussed. Implantation conditions and annealing conditions are detailed. The gage factor and its temperature variation are not drastically affected by crystal damage for some crystal orientations. A model is proposed to account for the effects of electron damage on the temperature dependence of resistivity and on silicon piezoresistance. The results are applicable to the design of silicon-on-sapphire strain gages with high gage factors.

  4. Dependence of defect introduction on temperature and resistivity and some long-term annealing effects

    Science.gov (United States)

    Brucker, G. J.

    1971-01-01

    The effort reported here represents data of lithium properties in bulk-silicon samples before and after irradiation for analytical information required to characterize the interactions of lithium with radiation-induced defects in silicon. A model of the damage and recovery mechanisms in irradiated-lithium-containing solar cells is developed based on making measurements of the Hall coefficient and resistivity of samples irradiated by 1-MeV electrons. Experiments on bulk samples included Hall coefficient and resistivity measurements taken as a function of: (1) bombardment temperature, (2) resistivity, (3) fluence, (4) oxygen concentration, and (5) annealing time at temperatures from 300 to 373 K.

  5. Reducing the layer number of AB stacked multilayer graphene grown on nickel by annealing at low temperature.

    Science.gov (United States)

    Velasco, J Marquez; Giamini, S A; Kelaidis, N; Tsipas, P; Tsoutsou, D; Kordas, G; Raptis, Y S; Boukos, N; Dimoulas, A

    2015-10-09

    Controlling the number of layers of graphene grown by chemical vapor deposition is crucial for large scale graphene application. We propose here an etching process of graphene which can be applied immediately after growth to control the number of layers. We use nickel (Ni) foil at high temperature (T = 900 °C) to produce multilayer-AB-stacked-graphene (MLG). The etching process is based on annealing the samples in a hydrogen/argon atmosphere at a relatively low temperature (T = 450 °C) inside the growth chamber. The extent of etching is mainly controlled by the annealing process duration. Using Raman spectroscopy we demonstrate that the number of layers was reduced, changing from MLG to few-layer-AB-stacked-graphene and in some cases to randomly oriented few layer graphene near the substrate. Furthermore, our method offers the significant advantage that it does not introduce defects in the samples, maintaining their original high quality. This fact and the low temperature our method uses make it a good candidate for controlling the layer number of already grown graphene in processes with a low thermal budget.

  6. On the correlation between annealing and variabilities in pulsed-luminescence from quartz

    International Nuclear Information System (INIS)

    Chithambo, M.L.

    2006-01-01

    Properties of luminescence lifetimes in quartz related to annealing between 500 and 900 deg. C have been investigated. The luminescence was pulse-stimulated at 470nm from sets of granular quartz annealed at 500, 600, 700, 800, and 900 deg. C. The lifetimes decrease with annealing temperature from about 42 to 33μs when the annealing temperature is increased from 500 to 900 deg. C. Luminescence lifetimes are most sensitive to duration of annealing at 600 deg. C, decreasing from 40.2+/-0.7μs by as much as 7μs when the duration of annealing is changed from 10 to 60min. However, at 800-900 deg. C lifetimes are essentially independent of annealing temperature at about 33μs. Increasing the exciting beta dose causes an increase in the lifetimes of the stimulated luminescence in the sample annealed at 800 deg. C but not in those annealed at either 500 or 600 deg. C. The temperature-resolved distribution of luminescence lifetimes is affected by thermal quenching of luminescence. These features may be accounted for with reference to two principal luminescence centres involved in the luminescence emission process

  7. Structural and phase transformations in the low-temperature annealed amorphous “finemet”-type microwires

    Energy Technology Data Exchange (ETDEWEB)

    Tcherdyntsev, V.V., E-mail: vvch08@yandex.ru [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation); Aleev, A.A. [SSC RF Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Churyukanova, M.N.; Kaloshkin, S.D. [National University of Science and Technology “MISIS”, Moscow 119049 (Russian Federation); Medvedeva, E.V. [Institute of Electrophysics, Ural Branch, Russian Academy of Sciences, Yekaterinburg 620016 (Russian Federation); Korchuganova, O.A. [SSC RF Institute for Theoretical and Experimental Physics, Moscow 117218 (Russian Federation); Zhukova, V. [Dpto. de Fns. Mater., UPV/EHU, San Sebastian 20018 (Spain); Zhukov, A.P. [Dpto. de Fns. Mater., UPV/EHU, San Sebastian 20018 (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain)

    2014-02-15

    Highlights: • Structure and magnetic properties evolution at heating of amorphous microwires was studied. • Relaxation processes in the amorphous phase correlate with an increase in Curie temperature. • Curie temperature change can not be stabilized by a prolonged exposure at pre-crystallization temperatures. • Tomographic atom probe microscopy supports the formation of α-Fe phase precipitations enriched in Si. -- Abstract: Finemet-type glass-coated microwires with amorphous and nanocrystalline structure have been investigated. The relaxation and crystallization processes at heating of amorphous alloy have been studied by DSC method. We observed that the relaxation processes in the amorphous phase correlate with an increasing of the Curie temperature. Additionally a prolonged exposure of the samples below the crystallization temperatures does not stabilize the Curie temperature change. An investigation by the tomographic atom probe microscopy supports the formation of precipitations, probably α-Fe phase, as a result of low-temperature annealing (400 °C, 5 min). We found that the observed nano-sized areas were enriched in silicon.

  8. Structural and phase transformations in the low-temperature annealed amorphous “finemet”-type microwires

    International Nuclear Information System (INIS)

    Tcherdyntsev, V.V.; Aleev, A.A.; Churyukanova, M.N.; Kaloshkin, S.D.; Medvedeva, E.V.; Korchuganova, O.A.; Zhukova, V.; Zhukov, A.P.

    2014-01-01

    Highlights: • Structure and magnetic properties evolution at heating of amorphous microwires was studied. • Relaxation processes in the amorphous phase correlate with an increase in Curie temperature. • Curie temperature change can not be stabilized by a prolonged exposure at pre-crystallization temperatures. • Tomographic atom probe microscopy supports the formation of α-Fe phase precipitations enriched in Si. -- Abstract: Finemet-type glass-coated microwires with amorphous and nanocrystalline structure have been investigated. The relaxation and crystallization processes at heating of amorphous alloy have been studied by DSC method. We observed that the relaxation processes in the amorphous phase correlate with an increasing of the Curie temperature. Additionally a prolonged exposure of the samples below the crystallization temperatures does not stabilize the Curie temperature change. An investigation by the tomographic atom probe microscopy supports the formation of precipitations, probably α-Fe phase, as a result of low-temperature annealing (400 °C, 5 min). We found that the observed nano-sized areas were enriched in silicon

  9. Effects of annealing temperatures on the morphological, mechanical, surface chemical bonding, and solar selectivity properties of sputtered TiAlSiN thin films

    International Nuclear Information System (INIS)

    Rahman, M. Mahbubur; Jiang, Zhong-Tao; Zhou, Zhi-feng; Xie, Zonghan; Yin, Chun Yang; Kabir, Humayun; Haque, Md. Mahbubul; Amri, Amun; Mondinos, Nicholas; Altarawneh, Mohammednoor

    2016-01-01

    Quaternary sputtered TiAlSiN coatings were investigated for their high temperature structural stability, surface morphology, mechanical behaviors, surface chemical bonding states, solar absorptance and thermal emittance for possible solar selective surface applications. The TiAlSiN films were synthesized, via unbalanced magnetron sputtered technology, on AISI M2 steel substrate and annealed at 500 °C - 800 °C temperature range. SEM micrographs show nanocomposite-like structure with amorphous grain boundaries. Nanoindentation analyses indicate a decrease of hardness, plastic deformation and constant yield strength for the coatings. XPS analysis show mixed Ti, Al and Si nitride and oxide as main coating components but at 800 °C the top layer of the coatings is clearly composed of only Ti and Al oxides. Synchrotron radiation XRD (SR-XRD) results indicate various Ti, Al and Si nitride and oxide phases, for the above annealing temperature range with a phase change occurring with the Fe component of the substrate. UV–Vis spectroscopy, FTIR spectroscopy studies determined a high solar selectivity, s of 24.6 for the sample annealed at 600 °C. Overall results show good structural and morphological stability of these coatings at temperatures up to 800 °C with a very good solar selectivity for real world applications. - Highlights: • TiAlSiN sputtered coatings were characterized for solar selective applications. • In situ synchrotron radiation XRD were studies show the occurrence of multiple stable phases. • A high selectivity of 24.63 has been achieved for the coatings annealed at 700 °C. • Existence of XRD phases were also confirmed by XPS measurements. • At high temperature annealing the mechanical properties of films were governed by the utmost surfaces of the films.

  10. Effects of phosphorous-doping and high temperature annealing on CVD grown 3C-SiC

    International Nuclear Information System (INIS)

    Rooyen, I.J. van; Neethling, J.H.; Henry, A.; Janzén, E.; Mokoduwe, S.M.; Janse van Vuuren, A.; Olivier, E.

    2012-01-01

    The integrity and property behavior of the SiC layer of the Tri-isotropic (TRISO) coated particle (CP) for high temperature reactors (HTR) are very important as the SiC layer is the main barrier for gaseous and metallic fission product release. This study describes the work done on un-irradiated SiC samples prepared with varying phosphorus levels to simulate the presence of phosphorus due to transmutation. 30 Si transmutes to phosphorous ( 31 P) and other transmutation products during irradiation, which may affect the integrity of the SiC layer. The P-doping levels of the SiC samples used in this study cover the range from 1.1 × 10 15 to 1.2 × 10 19 atom/cm 3 and are therefore relevant to the PBMR operating conditions. Annealing from 1000 °C to 2100 °C was performed to study the possible changes in nanostructures and various properties due to temperature. Characterization results by X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM), are reported in this article. As grain boundary diffusion is identified as a possible mechanism by which 110m Ag, one of the fission activation products, might be released through intact SiC layer, grain size measurements is also included in this study. Temperature is evidently one of the factors/parameters amongst others known to influence the grain size of SiC and therefore it is important to investigate the effect of high temperature annealing on the SiC grain size. The ASTM E112 method as well as electron back scatter diffraction (EBSD) was used to determine the grain size of various commercial SiC samples and the SiC layer in experimental PBMR Coated Particles (CPs) after annealing at temperatures ranging from 1600 °C to 2100 °C. The HRTEM micrograph of the decomposition of SiC at 2100 °C are shown and discussed. Nanotubes were not identified during the TEM and HRTEM analysis

  11. Effects of phosphorous-doping and high temperature annealing on CVD grown 3C-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Rooyen, I.J. van, E-mail: Isabella.vanrooyen@inl.gov [CSIR, National Laser Centre, PO Box 395, Pretoria 0001 (South Africa); Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Fuel Design, PBMR, 1279 Mike Crawford Avenue, Centurion 0046 (South Africa); Neethling, J.H. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Henry, A.; Janzen, E. [Department of Physics, Chemistry and Biology, Semiconductor Materials, Linkoeping University, Linkoeping 58183 (Sweden); Mokoduwe, S.M. [Fuel Design, PBMR, 1279 Mike Crawford Avenue, Centurion 0046 (South Africa); Janse van Vuuren, A.; Olivier, E. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2012-10-15

    The integrity and property behavior of the SiC layer of the Tri-isotropic (TRISO) coated particle (CP) for high temperature reactors (HTR) are very important as the SiC layer is the main barrier for gaseous and metallic fission product release. This study describes the work done on un-irradiated SiC samples prepared with varying phosphorus levels to simulate the presence of phosphorus due to transmutation. {sup 30}Si transmutes to phosphorous ({sup 31}P) and other transmutation products during irradiation, which may affect the integrity of the SiC layer. The P-doping levels of the SiC samples used in this study cover the range from 1.1 Multiplication-Sign 10{sup 15} to 1.2 Multiplication-Sign 10{sup 19} atom/cm{sup 3} and are therefore relevant to the PBMR operating conditions. Annealing from 1000 Degree-Sign C to 2100 Degree-Sign C was performed to study the possible changes in nanostructures and various properties due to temperature. Characterization results by X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM), are reported in this article. As grain boundary diffusion is identified as a possible mechanism by which {sup 110m}Ag, one of the fission activation products, might be released through intact SiC layer, grain size measurements is also included in this study. Temperature is evidently one of the factors/parameters amongst others known to influence the grain size of SiC and therefore it is important to investigate the effect of high temperature annealing on the SiC grain size. The ASTM E112 method as well as electron back scatter diffraction (EBSD) was used to determine the grain size of various commercial SiC samples and the SiC layer in experimental PBMR Coated Particles (CPs) after annealing at temperatures ranging from 1600 Degree-Sign C to 2100 Degree-Sign C. The HRTEM micrograph of the decomposition of Si

  12. Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

    International Nuclear Information System (INIS)

    Zhang Xiang; Liu Bang-Wu; Li Chao-Bo; Xia Yang; Zhao Yan

    2013-01-01

    Chemical and field-effect passivation of atomic layer deposition (ALD) Al 2 O 3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 °C and 500 °C, while the improvement is quite weak at 600 °C, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al 2 O 3 /Si interface structural change. The Al—OH groups play an important role in chemical passivation, and the Al—OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  13. Infrared thermal annealing device

    International Nuclear Information System (INIS)

    Gladys, M.J.; Clarke, I.; O'Connor, D.J.

    2003-01-01

    A device for annealing samples within an ultrahigh vacuum (UHV) scanning tunneling microscopy system was designed, constructed, and tested. The device is based on illuminating the sample with infrared radiation from outside the UHV chamber with a tungsten projector bulb. The apparatus uses an elliptical mirror to focus the beam through a sapphire viewport for low absorption. Experiments were conducted on clean Pd(100) and annealing temperatures in excess of 1000 K were easily reached

  14. Solution-Mediated Annealing of Polymer Optical Fiber Bragg Gratings at Room Temperature

    DEFF Research Database (Denmark)

    Fasano, Andrea; Woyessa, Getinet; Janting, Jakob

    2017-01-01

    In this letter, we investigate the response of poly(methylmethacrylate) (PMMA) microstructured polymer optical fiber Bragg gratings (POFBGs) after immersion inmethanol/water solutions at room temperature. As the glass transition temperature of solution-equilibrated PMMA differs from the one...... of solvent-free PMMA, different concentrations of methanol and water lead to various degrees of frozen-in stress relaxation in the fiber. After solvent evaporation, we observe a permanent blue-shift in the grating resonance wavelength. The main contribution in the resonance wavelength shift arises from...... a permanent change in the size of the fiber. The results are compared with conventional annealing. The proposed methodology is cost-effective as it does not require a climate chamber. Furthermore, it enables an easy-to-control tuning of the resonance wavelength of POFBGs....

  15. Influence of annealing conditions on anodic tungsten oxide layers and their photoelectrochemical activity

    International Nuclear Information System (INIS)

    Syrek, Karolina; Zych, Marta; Zaraska, Leszek; Sulka, Grzegorz D.

    2017-01-01

    Highlights: • Effect of annealing temperature on the morphology and crystalline structure of anodic WO 3 was investigated. • Photoelectrochemical properties of WO 3 layers annealed at different temperatures were studied. • Edges of conduction and valence bands were estimated for tungsten oxide layers annealed at different temperatures. • Influence of annealing time on crystalline structure, morphology and photoelectrochemical performance was studied. - Abstract: The nanoporous tungsten oxide films having an amorphous structure were prepared in an electrolyte containing fluoride ions via an anodization process. The as-synthesized anodic oxide layers can be easily converted to the monoclinic WO 3 phase upon annealing in air. The as-synthesized and annealed WO 3 layers were investigated by using X-ray diffraction, scanning electron microscopy, and photocurrent spectroscopy. The effect of annealing temperature and annealing time on the oxide morphology, crystal structure and electrochemical properties were studied. The samples were annealed in air at the temperatures ranging from 400 to 600 °C, and it was found that the original porous morphology of oxide is completely lost after annealing at 600 °C. The changes in the average crystallite sizes upon annealing were confirmed by XRD measurements. The photoelectrochemical performance of the annealed WO 3 layers were studied under pulsed UV illumination, and the highest photocurrents were observed at the incident light wavelength of 350 nm for the sample annealed at 500 °C for 2 h. The band gap energy and the positions of conduction and valence band edges were determined for all studied samples.

  16. A device for routine studies of nuclear track annealing in mineral grains

    International Nuclear Information System (INIS)

    Jha, R.; Lal, D.

    1984-01-01

    For studies of annealing of nuclear tracks in common rock-forming minerals, we have devised a simple heating system that provides a highly stable hot environment characterized by a large temperature gradient. The temperature can be maintained at the desired values within +- 2 deg C over a period of several months. The system allows placing of samples at eight different temperature points in the temperature range of 350 to 550 deg C in a single setting. This range essentially encompasses the entire temperature range normally used in laboratory track annealing of mineral grains with annealing duration of a few minutes to a couple of months. Lower as well as higher temperatures and different ranges are possible by changing the material used for the heating system and its geometry. However, for annealing at high temperature, and for short duration we found that it is more convenient to heat samples in the appropriate region of the cone of a large gas flame. We present, as an example, results of cosmic-ray track annealing studies in hypersthene grains from the Johnstown meteorite. The simplicity and reproducibility of the technique allows an in-depth study of annealing characteristics of different minerals. (author)

  17. Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature.

    Science.gov (United States)

    Hsu, Ya-Chu; Hung, Yu-Chen; Wang, Chiu-Yen

    2017-09-15

    High uniformity Au-catalyzed indium selenide (In 2 Se 3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In 2 Se 3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity of nanowires is improved via a fast pre-annealing rate, 100 °C/s. Comparing with the slower heating rate, 0.1 °C/s, the average diameters and distributions (standard deviation, SD) of In 2 Se 3 nanowires with and without the RTA process are 97.14 ± 22.95 nm (23.63%) and 119.06 ± 48.75 nm (40.95%), respectively. The in situ annealing TEM is used to study the effect of heating rate on the formation of Au nanoparticles from the as-deposited Au film. The results demonstrate that the average diameters and distributions of Au nanoparticles with and without the RTA process are 19.84 ± 5.96 nm (30.00%) and about 22.06 ± 9.00 nm (40.80%), respectively. It proves that the diameter size, distribution, and uniformity of Au-catalyzed In 2 Se 3 nanowires are reduced and improved via the RTA pre-treated. The systemic study could help to control the size distribution of other nanomaterials through tuning the annealing rate, temperatures of precursor, and growth substrate to control the size distribution of other nanomaterials. Graphical Abstract Rapid thermal annealing (RTA) process proved that it can uniform the size distribution of Au nanoparticles, and then it can be used to grow the high uniformity Au-catalyzed In 2 Se 3 nanowires via the vapor-liquid-solid (VLS) mechanism. Comparing with the general growth condition, the heating rate is slow, 0.1 °C/s, and the growth temperature is a relatively high growth temperature, > 650 °C. RTA pre-treated growth substrate can form smaller and uniform Au nanoparticles to react with the In 2 Se 3 vapor and produce the high uniformity In 2 Se 3 nanowires. The in situ annealing TEM is used to realize the effect of heating

  18. Enhanced dielectric and electrical properties of annealed PVDF thin film

    Science.gov (United States)

    Arshad, A. N.; Rozana, M. D.; Wahid, M. H. M.; Mahmood, M. K. A.; Sarip, M. N.; Habibah, Z.; Rusop, M.

    2018-05-01

    Poly (vinylideneflouride) (PVDF) thin films were annealed at various annealing temperatures ranging from 70°C to 170°C. This study demonstrates that PVDF thin films annealed at temperature of 70°C (AN70) showed significant enhancement in their dielectric constant (14) at frequency of 1 kHz in comparison to un-annealed PVDF (UN-PVDF), dielectric constant (10) at the same measured frequency. As the annealing temperature was increased from 90°C (AN90) to 150°C (AN150), the dielectric constant value of PVDF thin films was observed to decrease gradually to 11. AN70 also revealed low tangent loss (tan δ) value at similar frequency. With respect to its resistivity properties, the values were found to increase from 1.98×104 Ω.cm to 3.24×104 Ω.cm for AN70 and UN-PVDF films respectively. The improved in dielectric constant, with low tangent loss and high resistivity value suggests that 70°C is the favorable annealing temperature for PVDF thin films. Hence, AN70 is a promising film to be utilized for application in electronic devices such as low frequency capacitor.

  19. Texture evolution in Fe-3% Si steel treated under unconventional annealing conditions

    International Nuclear Information System (INIS)

    Stoyka, Vladimir; Kovac, Frantisek; Stupakov, Oleksandr; Petryshynets, Ivan

    2010-01-01

    The present work investigates texture evolution stages in grain-oriented steel heat-treated using unconventional conditions. The Fe-3%Si steel taken after final cold rolling reduction from an industrial line was subjected to a laboratory isothermal annealing at different temperatures. The annealing temperatures were varied in a range of 850-1150 deg. C. During the annealing each specimen was heated at 10 deg. C/s and kept at the stated temperature for 5 min. Development of microstructure and texture in the annealed specimens were followed by the DC measurements of magnetic properties. The grain oriented steel, taken from the same industrial line after final box annealing was also analyzed and compared with the laboratory annealed specimens. It was shown that there is an optimal temperature region that, with combination of a fast heating rate, led to the best conditions of a drastically reduced development time of the {110} crystallographic texture in the cold rolled grain-oriented steel. Materials heat treated below the optimum temperature region account for a primary recrystallization, while applying heat above this region leads to a secondary recrystallization without abnormal grain growth. Moreover, in the optimum temperature range, there was a particular temperature leading to the most optimal microstructure and texture. The magnetic properties, measured after the optimal heat treatment, were close to that measured on specimens taken after the final box annealing. The electron back scattered diffraction measurement technique revealed that sharpness of the {110} crystallographic texture, developed at the optimum temperature is comparable to the steel taken after the industrial final box annealing. This fact is evidence that there is a temperature where the abnormal grain growth proceeds optimally.

  20. Effect of Annealing Heat Treatment to Characteristics of AlDC8 (Al-Si-Cu) Alloy

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Kyung Man; Lee, Sung-Yul; Lee, Myeong Hoon; Jeong, Jae-Hyun [Korea Maritime and Ocean University, Busan (Korea, Republic of); Baek, Tae-Sil [Pohang College, Pohang (Korea, Republic of)

    2015-12-15

    ALDC8 (Al-Si-Cu) alloy has been often corroded with pattern of intergranular corrosion in corrosive environments. Thus, in order to improve its corrosion resistance, the effect of annealing heat treatment to corrosion resistance and hardness was investigated with parameters of heating temperatures such as 100 ℃, 200 ℃, 300 ℃, 400 ℃ and 500 ℃ for 1hr. The hardness was varied with annealing temperature and slightly decreased with annealing heat treatment. However, the relation between annealing temperature and hardness agreed not well each other. Corrosion potential was shifted to noble direction and corrosion current density was also decreased with increasing annealing temperature. Moreover, both AC impedance at 10 mHz and polarization resistance on the cyclic voltammogram curve were also increased with increasing annealing temperature. Furthermore, intergranular corrosion was somewhat observed in non heat treatment as well as annealing temperatures at 100 ℃, 200 ℃ and 300 ℃, while, intergranular corrosion was not nearly observed at annealing temperature of 400 ℃, 500 ℃. Consequently, it is considered that the annealing heat treatment of ALDC8 alloy may be an available method not only to inhibit its intergranular corrosion but also to improve its corrosion resistance.

  1. Effect of tensile stress on the annealed structure of a metallic glass

    International Nuclear Information System (INIS)

    Vianco, P.T.; Li, J.C.M.

    1987-01-01

    The low-temperature (120 0 --245 0 C) structural relaxation of Metglas/sup R/ 2826B (Ni 49 Fe 29 P 14 B 6 Si 2 ) amorphous alloy was investigated for samples subjected to a tensile stress in the range of 20--400 MPa during annealing. The stress-annealed samples demonstrated a much smaller increase of microhardness than was observed in similarly annealed ribbons without a stress. Further heat treatment of the stress-annealed specimens, this time without the stress, was capable of increasing the microhardnesses of only some ribbons to values equal to those of samples similarly heat treated initially without a stress. An additional exothermic peak in the differential scanning calorimetry (DSC) thermograms of the stress-annealed specimens indicated the presence of a more disordered structure at room temperature, which was found to correlate with the lower microhardness values. Otherwise, those artifacts of the DSC thermograms that were characteristic of samples annealed without a stress were still present in the stress-annealed ribbons. No effect on the crystallization temperature was noted but the glass transition temperature was increased in the stress-annealed case with respect to values attained when the stress was absent during heat treatment. A reduction in the degree of embrittlement of those samples annealed with a tensile stress was a further indication of more disorder in the stress-annealed ribbons

  2. Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO2 thin films deposited by electron beam evaporation technique

    International Nuclear Information System (INIS)

    Mohanty, P.; Kabiraj, D.; Mandal, R.K.; Kulriya, P.K.; Sinha, A.S.K.; Rath, Chandana

    2014-01-01

    TiO 2 thin films deposited by electron beam evaporation technique annealed in either O 2 or Ar atmosphere showed ferromagnetism at room temperature. The pristine amorphous film demonstrates anatase phase after annealing under Ar/O 2 atmosphere. While the pristine film shows a super-paramagnetic behavior, both O 2 and Ar annealed films display hysteresis at 300 K. X-ray photo emission spectroscopy (XPS), Raman spectroscopy, Rutherford’s backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) were used to refute the possible role of impurities/contaminants in magnetic properties of the films. The saturation magnetization of the O 2 annealed film is found to be higher than the Ar annealed one. It is revealed from shifting of O 1s and Ti 2p core level spectra as well as from the enhancement of high binding energy component of O 1s spectra that the higher magnetic moment is associated with higher oxygen vacancies. In addition, O 2 annealed film demonstrates better crystallinity, uniform deposition and smoother surface than that of the Ar annealed one from glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM). We conclude that although ferromagnetism is due to oxygen vacancies, the higher magnetization in O 2 annealed film could be due to crystallinity, which has been observed earlier in Co doped TiO 2 film deposited by pulsed laser deposition (Mohanty et al., 2012 [10]). - Highlights: • TiO 2 films were deposited by e-beam evaporation technique and post annealed under O 2 /Ar at 500 °C. • The pristine film shows SPM behavior where as O 2 and Ar annealed films demonstrate RTFM. • The presence of magnetic impurities has been discarded by various characterization techniques. • The magnetic moment is found to be higher in O 2 annealed film than the Ar annealed one. • The higher M s in O 2 annealed film is attributed to oxygen vacancies as well as crystallinity

  3. Compositional changes at the interface between thorium-doped uranium dioxide and zirconium due to high-temperature annealing

    Science.gov (United States)

    Youn, Young-Sang; Lee, Jeongmook; Kim, Jandee; Kim, Jong-Yun

    2018-06-01

    Compositional changes at the interface between thorium-doped uranium dioxide (U0.97Th0.03O2) and Zr before and after annealing at 1700 °C for 18 h were studied by X-ray photoelectron spectroscopy, X-ray diffraction, and Raman spectroscopy. At room temperature, the U0.97Th0.03O2 pellet consisted of hyperstoichiometric UO2+x with UO2 and ThO2, and the Zr sample contained Zr with ZrO2. After annealing, the former contained stoichiometric UO2 with ThO2 and the latter consisted of ZrO2 along with ZrO2·2H2O.

  4. Thermal annealing of an embrittled reactor pressure vessel

    International Nuclear Information System (INIS)

    Mager, T.R.; Dragunov, Y.G.; Leitz, C.

    1998-01-01

    As a result of the popularity of the Agencies report 'Neutron Irradiation Embrittlement of Reactor Pressure Vessel Steels' of 1975, it was decided that another report on this broad subject would be of use. In this report, background and contemporary views on specially identified areas of the subject are considered as self-contained chapters, written by experts. Chapter 11 deals with thermal annealing of an embrittled reactor pressure vessel. Anneal procedures for vessels from both the US and the former USSR are mentioned schematically, wet anneals at lower temperature and dry anneals above RPV design temperatures are investigated. It is shown that heat treatment is a means of recovering mechanical properties which were degraded by neutron radiation exposure, thus assuring reactor pressure vessel compliance with regulatory requirements

  5. Molecular dynamics simulation of annealed ZnO surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Min, Tjun Kit; Yoon, Tiem Leong [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Lim, Thong Leng [Faculty of Engineering and Technology, Multimedia University, Melaka Campus, 75450 Melaka (Malaysia)

    2015-04-24

    The effect of thermally annealing a slab of wurtzite ZnO, terminated by two surfaces, (0001) (which is oxygen-terminated) and (0001{sup ¯}) (which is Zn-terminated), is investigated via molecular dynamics simulation by using reactive force field (ReaxFF). We found that upon heating beyond a threshold temperature of ∼700 K, surface oxygen atoms begin to sublimate from the (0001) surface. The ratio of oxygen leaving the surface at a given temperature increases as the heating temperature increases. A range of phenomena occurring at the atomic level on the (0001) surface has also been explored, such as formation of oxygen dimers on the surface and evolution of partial charge distribution in the slab during the annealing process. It was found that the partial charge distribution as a function of the depth from the surface undergoes a qualitative change when the annealing temperature is above the threshold temperature.

  6. Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

    International Nuclear Information System (INIS)

    Phuan, Yi Wen; Chong, Meng Nan; Zhu, Tao; Yong, Siek-Ting; Chan, Eng Seng

    2015-01-01

    Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm 2 at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe 2 O 3 ) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600 °C. As the

  7. Effects of annealing temperature on the physicochemical, optical and photoelectrochemical properties of nanostructured hematite thin films prepared via electrodeposition method

    Energy Technology Data Exchange (ETDEWEB)

    Phuan, Yi Wen [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Chong, Meng Nan, E-mail: Chong.Meng.Nan@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Zhu, Tao; Yong, Siek-Ting [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Chan, Eng Seng [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia); Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway 46150 Selangor DE (Malaysia)

    2015-09-15

    Highlights: • Nanostructured hematite thin films were synthesized via electrodeposition method. • Effects of annealing on size, grain boundary and PEC properties were examined. • Photocurrents generation was enhanced when the thin films were annealed at 600 °C. • The highest photocurrent density of 1.6 mA/cm{sup 2} at 0.6 V vs Ag/AgCl was achieved. - Abstract: Hematite (α-Fe{sub 2}O{sub 3}) is a promising photoanode material for hydrogen production from photoelectrochemical (PEC) water splitting due to its wide abundance, narrow band-gap energy, efficient light absorption and high chemical stability under aqueous environment. The key challenge to the wider utilisation of nanostructured hematite-based photoanode in PEC water splitting, however, is limited by its low photo-assisted water oxidation caused by large overpotential in the nominal range of 0.5–0.6 V. The main aim of this study was to enhance the performance of hematite for photo-assisted water oxidation by optimising the annealing temperature used during the synthesis of nanostructured hematite thin films on fluorine-doped tin oxide (FTO)-based photoanodes prepared via the cathodic electrodeposition method. The resultant nanostructured hematite thin films were characterised using field emission-scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), UV-visible spectroscopy and Fourier transform infrared spectroscopy (FTIR) for their elemental composition, average nanocrystallites size and morphology; phase and crystallinity; UV-absorptivity and band gap energy; and the functional groups, respectively. Results showed that the nanostructured hematite thin films possess good ordered nanocrystallites array and high crystallinity after annealing treatment at 400–600 °C. FE-SEM images illustrated an increase in the average hematite nanocrystallites size from 65 nm to 95 nm when the annealing temperature was varied from 400 °C to 600

  8. Influence of Intercritical Annealing Temperature on Mechanical ...

    African Journals Online (AJOL)

    The fracture surfaces of the impact test samples were examined using the scanning electron microscope (SEM). Micros structural evolution of the samples was also examined with an optical microscope. The results showed that all the evaluated mechanical properties were improved by intercritical annealing, with the ...

  9. Dependence of electrical and optical properties of sol-gel prepared undoped cadmium oxide thin films on annealing temperature

    International Nuclear Information System (INIS)

    Santos-Cruz, J.; Torres-Delgado, G.; Castanedo-Perez, R.; Jimenez-Sandoval, S.; Jimenez-Sandoval, O.; Zuniga-Romero, C.I.; Marquez Marin, J.; Zelaya-Angel, O.

    2005-01-01

    The effect of the annealing temperature (T a ) on the optical, electrical and structural properties of the undoped cadmium oxide (CdO) thin films obtained by the sol-gel method, using a simple precursor solution, was studied. All the CdO films annealed in the range from 200 to 450 deg. C are polycrystalline with (111) preferential orientation and present high optical transmission > 85% for wavelengths above 500 nm. The resistivity decreases as T a increases until it reaches a value of 6 x 10 -4 Ω cm for T a 350 deg. C. For higher temperatures the resistivity experiences a slight increase. Images obtained by atomic force microscopy show an evident incremental change of the aggregate size (clusters of grains) as T a increases. The grain size also increases when T a increases as observed in data calculated from X-ray measurements

  10. Annealing effects of carbon fiber-reinforced epoxy resin composites irradiated by electron beams

    International Nuclear Information System (INIS)

    Udagawa, Akira; Sasuga, Tuneo; Ito, Hiroshi; Hagiwara, Miyuki

    1987-01-01

    Carbon cloth-reinforced epoxy resin composites were irradiated with 2 MeV electrons at room temperature and then annealed in air for 2 h at temperatures up to 180 deg C. A considerable decrease in the three-point bending strength occurred when the irradiated composites were annealed in the temperature range of 115 - 135 deg C which is below the glass transition temperature T g of the matrix resin, while the bending strength remained unchanged up to 180 deg C for the unirradiated composites. In the dynamic viscoelastic spectra of the irradiated matrix, a new relaxation appeared at the temperature extending from 50 deg C to just below the matrix T g and disappeared on annealing for 2 h at 135 deg C. Annealing also decreased the concentration of free radicals existing stably in the irradiated matrix at room temperature. After annealing, a large amount of clacks and voids were observed in the fractography of the composites by scanning electron microscopy. These results indicate: (1) Annealing brings about rearrangement of the radiation-induced molecular chain scission in the matrix; (2) The bending strength of the irradiated composites decreased owing to the increased brittleness of the matrix by annealing. (author)

  11. Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Oh, Byung Su [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Display Company, Yongin (Korea, Republic of); Joo, Min-Kyu [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble (France); Ahn, Seung-Eon [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin 446-712 (Korea, Republic of)

    2014-12-28

    We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

  12. The precipitation in annealing and its effect on permittivity of Fe–Si–Al powders

    International Nuclear Information System (INIS)

    Li, Gang; Cui, Yin; Zhang, Nan; Wang, Xin; Xie, Jian Liang

    2016-01-01

    SEM images show that some precipitates distributed on the surface of as-annealed Fe–Si–Al powders. Subsequent experimental results indicate that both morphology and microstructure of as-annealed Fe–Si–Al powders change with increasing annealing temperature. Meanwhile, dielectric properties analysis suggesting that both real part ε′ and imaginary part ε″ of the Fe–Si–Al powders decrease significantly after annealed at 450 °C or higher temperature. We assume that it’s the precipitates with low electrical conductivity developed on the surface of powders that increase the surface resistivity of as-annealed powders and leading to a lower imagine part of permittivity. The drop of real part ε′ ascribed to the weakened interfacial polarization which resulted from the decrease of structural defects such as grain boundaries and interfaces during annealing process. - Highlights: • As-milled Fe–Si–Al powders were annealed at various temperature. • The change of morphology and microstructure of as-annealed Fe–Si–Al was examined. • Complex permittivity decrease significantly after annealed over 400 °C and permeability increase as annealing temperature rises. • The precipitation process in annealing and its effect on permittivity were analyzed.

  13. The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system

    International Nuclear Information System (INIS)

    Ahmed, A.M.; Mohamed Abd El-Mo'ez A; Mohamed, H.F.; Diab, A.K.; Mohamed Ami M; Mazen, A.E.A.

    2016-01-01

    This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800 and 900 deg C) in air for (La 0. 7Ba 0.3 MnO 3 ) 1-x /(NiO) x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the samples. However, it is observed that the annealing treatment has a notable effect on the electrical resistivity and the metal-semiconductor transition temperature Tms. Temperature dependent magnetization measurements showed a decrease in Curie temperature TC with annealing temperature. In the same time, annealing process decreases the magnetoresistance of La 0.7 Ba 0.3 MnO 3 , in contrast to (La 0.7 Ba 0.3 MnO 3 ) 0.9 /(NiO) 0.1 composite.

  14. High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

    International Nuclear Information System (INIS)

    Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

    1988-01-01

    A rapid thermal anneal (RTA) in an NH 3 ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 0 C in NH 3 and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (≥1000 0 C) RTA in Ar completely converted W into the low resistivity (31 μΩ cm) tetragonal WSi 2 phase. In contrast, after a prior 900 0 C RTA in NH 3 , N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi 2 formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 0 C NH 3 anneal. The NH 3 -treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 0 C, at which point some increase in contact resistance was measured

  15. Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Park, Hyun-Woo; Choi, Min-Jun; Jo, Yongcheol; Chung, Kwun-Bum, E-mail: kbchung@dongguk.edu

    2014-12-01

    Highlights: • We studied the low temperature process of InGaZnO oxide thin film transistor. • Hydorgen irradiation was used for low temperature process below 150 °C. • Using hydrogen irradiation, field effect mobility of IGZO TFT was enhanced to ∼5 cm{sup 2} /Vs. • We examined the origin of improvement of device performance via electronic structure. - Abstract: Device performance of radio frequency (RF) sputtered InGaZnO (IGZO) thin film transistors (TFTs) were improved using combination post-treatment with hydrogen irradiation and low temperature annealing at 150 °C. Under the combination treatment, IGZO TFTs were significantly enhanced without changing physical structure and chemical composition. On the other hand, the electronic structure represents a dramatically modification of the chemical bonding states, band edge states below the conduction band, and band alignment. Compared to the hydrogen irradiation or low temperature annealing, the combination treatment induces the increase of oxygen deficient chemical bonding states, the shallow band edge state below the conduction band, and the smaller energy difference of conduction band offset, which can generate the increase in charge carrier and enhance the device performance.

  16. Unraveling Quantum Annealers using Classical Hardness

    Science.gov (United States)

    Martin-Mayor, Victor; Hen, Itay

    2015-01-01

    Recent advances in quantum technology have led to the development and manufacturing of experimental programmable quantum annealing optimizers that contain hundreds of quantum bits. These optimizers, commonly referred to as ‘D-Wave’ chips, promise to solve practical optimization problems potentially faster than conventional ‘classical’ computers. Attempts to quantify the quantum nature of these chips have been met with both excitement and skepticism but have also brought up numerous fundamental questions pertaining to the distinguishability of experimental quantum annealers from their classical thermal counterparts. Inspired by recent results in spin-glass theory that recognize ‘temperature chaos’ as the underlying mechanism responsible for the computational intractability of hard optimization problems, we devise a general method to quantify the performance of quantum annealers on optimization problems suffering from varying degrees of temperature chaos: A superior performance of quantum annealers over classical algorithms on these may allude to the role that quantum effects play in providing speedup. We utilize our method to experimentally study the D-Wave Two chip on different temperature-chaotic problems and find, surprisingly, that its performance scales unfavorably as compared to several analogous classical algorithms. We detect, quantify and discuss several purely classical effects that possibly mask the quantum behavior of the chip. PMID:26483257

  17. Nanosecond laser ablated copper superhydrophobic surface with tunable ultrahigh adhesion and its renewability with low temperature annealing

    Science.gov (United States)

    He, An; Liu, Wenwen; Xue, Wei; Yang, Huan; Cao, Yu

    2018-03-01

    Recently, metallic superhydrophobic surfaces with ultrahigh adhesion have got plentiful attention on account of their significance in scientific researches and industrial applications like droplet transport, drug delivery and novel microfluidic devices. However, the long lead time and transience hindered its in-depth development and industrial application. In this work, nanosecond laser ablation was carried out to construct grid of micro-grooves on copper surface, whereafter, by applying fast ethanol assisted low-temperature annealing, we obtained surface with superhydrophobicity and ultrahigh adhesion within hours. And the ultrahigh adhesion force was found tunable by varying the groove spacing. Using ultrasonic cleaning as the simulation of natural wear and tear in service, the renewability of superhydrophobicity was also investigated, and the result shows that the contact angle can rehabilitate promptly by the processing of ethanol assisted low-temperature annealing, which gives a promising fast and cheap circuitous strategy to realize the long wish durable metallic superhydrophobic surfaces in practical applications.

  18. Evolution of Self-Assembled Au NPs by Controlling Annealing Temperature and Dwelling Time on Sapphire (0001).

    Science.gov (United States)

    Lee, Jihoon; Pandey, Puran; Sui, Mao; Li, Ming-Yu; Zhang, Quanzhen; Kunwar, Sundar

    2015-12-01

    Au nanoparticles (NPs) have been utilized in a wide range of device applications as well as catalysts for the fabrication of nanopores and nanowires, in which the performance of the associated devices and morphology of nanopores and nanowires are strongly dependent on the size, density, and configuration of the Au NPs. In this paper, the evolution of the self-assembled Au nanostructures and NPs on sapphire (0001) is systematically investigated with the variation of annealing temperature (AT) and dwelling time (DT). At the low-temperature range between 300 and 600 °C, three distinct regimes of the Au nanostructure configuration are observed, i.e., the vermiform-like Au piles, irregular Au nano-mounds, and Au islands. Subsequently, being provided with relatively high thermal energy between 700 and 900 °C, the round dome-shaped Au NPs are fabricated based on the Volmer-Weber growth model. With the increased AT, the size of the Au NPs is gradually increased due to a more favorable surface diffusion while the density is gradually decreased as a compensation. On the other hand, with the increased DT, the size and density of Au NPs decrease due to the evaporation of Au at relatively high annealing temperature at 950 °C.

  19. Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing.

    Science.gov (United States)

    Lu, Qifeng; Zhao, Chun; Mu, Yifei; Zhao, Ce Zhou; Taylor, Stephen; Chalker, Paul R

    2015-07-29

    A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD). The results indicated that: (1) more traps were observed compared to the conventional capacitance-voltage characterization method in LaZrO x ; (2) the time-dependent trapping/de-trapping was influenced by the edge time, width and peak-to-peak voltage of a gate voltage pulse. Post deposition annealing was performed at 700 °C, 800 °C and 900 °C in N₂ ambient for 15 s to the samples with 200 ALD cycles. The effect of the high temperature annealing on oxide traps and leakage current were subsequently explored. It showed that more traps were generated after annealing with the trap density increasing from 1.41 × 10 12 cm -2 for as-deposited sample to 4.55 × 10 12 cm -2 for the 800 °C annealed one. In addition, the leakage current density increase from about 10 - ⁶ A/cm² at V g = +0.5 V for the as-deposited sample to 10 -3 A/cm² at V g = +0.5 V for the 900 °C annealed one.

  20. Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

    Directory of Open Access Journals (Sweden)

    Qifeng Lu

    2015-07-01

    Full Text Available A powerful characterization technique, pulse capacitance-voltage (CV technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111 substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD. The results indicated that: (1 more traps were observed compared to the conventional capacitance-voltage characterization method in LaZrOx; (2 the time-dependent trapping/de-trapping was influenced by the edge time, width and peak-to-peak voltage of a gate voltage pulse. Post deposition annealing was performed at 700 °C, 800 °C and 900 °C in N2 ambient for 15 s to the samples with 200 ALD cycles. The effect of the high temperature annealing on oxide traps and leakage current were subsequently explored. It showed that more traps were generated after annealing with the trap density increasing from 1.41 × 1012 cm−2 for as-deposited sample to 4.55 × 1012 cm−2 for the 800 °C annealed one. In addition, the leakage current density increase from about 10−6 A/cm2 at Vg = +0.5 V for the as-deposited sample to 10−3 A/cm2 at Vg = +0.5 V for the 900 °C annealed one.

  1. Annealing effects on the migration of ion-implanted cadmium in glassy carbon

    Energy Technology Data Exchange (ETDEWEB)

    Hlatshwayo, T.T., E-mail: thulani.hlatshwayo@up.ac.za [Physics Department, University of Pretoria, Pretoria (South Africa); Sebitla, L.D. [Physics Department, University of Pretoria, Pretoria (South Africa); Physics Department, University of Botswana, Gaborone (Botswana); Njoroge, E.G.; Mlambo, M.; Malherbe, J.B. [Physics Department, University of Pretoria, Pretoria (South Africa)

    2017-03-15

    The migration behaviour of cadmium (Cd) implanted into glassy carbon and the effects of annealing on radiation damage introduced by ion implantation were investigated. The glassy carbon substrates were implanted with Cd at a dose of 2 × 10{sup 16} ions/cm{sup 2} and energy of 360 keV. The implantation was performed at room temperature (RT), 430 °C and 600 °C. The RT implanted samples were isochronally annealed in vacuum at 350, 500 and 600 °C for 1 h and isothermally annealed at 350 °C up to 4 h. The as-implanted and annealed samples were characterized by Raman spectroscopy and Rutherford backscattering spectrometry (RBS). Raman results revealed that implantation at room temperature amorphized the glassy carbon structure while high temperature implantations resulted in slightly less radiation damage. Isochronal annealing of the RT implanted samples resulted in some recrystallization as a function of increasing temperature. The original glassy carbon structure was not achieved at the highest annealing temperature of 600 °C. Diffusion of Cd in glassy carbon was already taking place during implantation at 430 °C. This diffusion of Cd was accompanied by significant loss from the surface during implantation at 600 °C. Isochronal annealing of the room temperature implanted samples at 350 °C for 1 h caused Cd to diffuse towards the bulk while isothermal annealing at 500 and 600 °C resulted in the migration of implanted Cd toward the surface accompanied by a loss of Cd from the surface. Isothermal annealing at 350 °C for 1 h caused Cd to diffuse towards the bulk while for annealing time >1 h Cd diffused towards the surface. These results were interpreted in terms of trapping and de-trapping of implanted Cd by radiation damage.

  2. Effect of annealing temperature on the structure and coke-resistance of nickel–iron bimetallic catalytic layer for in situ methane steam reforming in SOFC operation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xuehua; Zhang, Hanqing; Zhao, DanDan; Tang, Dian; Zhang, Teng, E-mail: teng_zhang@fzu.edu.cn

    2014-11-15

    Highlights: • An intermediate FeNi{sub 3} phase forms in all N{sub i0.75}Fe{sub 0.25} catalysts in present work. • The catalyst annealed at 705 °C has smallest calculated surface energy. • The catalyst annealed at 705 °C also exhibits the best coke resistance in methane. • The cell with catalyst layer annealed at 705 °C has the best stability in methane. - Abstract: In this paper, the effect on coke formation of adding a Ni{sub 0.75}Fe{sub 0.25} catalyst layer to the anode side of a fuel cell running on methane is investigated. The formation of an intermediate FeNi{sub 3} phase can be observed in catalysts annealed at different temperatures. The catalyst annealed at 705 °C has the smallest calculated surface energy and grain size among all catalysts annealed at different temperatures. In addition, the O{sub 2}-TPO profiles and Raman spectra of spent anode material reveal that the catalyst annealed at 705 °C has the best coke resistance among all catalysts. Moreover, the cell with catalyst layer annealed at 705 °C, under a current density of 600 mA cm{sup −2} at 650 °C, experiences a decrease of 10% after operating in methane for 260 min, which is much more stable than that without catalyst layer (a decrease of 50%)

  3. Defect annealing in Mn/Fe-implanted TiO2 (rutile)

    International Nuclear Information System (INIS)

    Gunnlaugsson, H P; Svane, A; Weyer, G; Mantovan, R; Masenda, H; Naidoo, D; Mølholt, T E; Gislason, H; Ólafsson, S; Johnston, K; Bharuth-Ram, K; Langouche, G

    2014-01-01

    A study of the annealing processes and charge state of dilute Fe in rutile TiO 2 single crystals was performed in the temperature range 143–662 K, utilizing online 57 Fe emission Mössbauer spectroscopy following low concentrations (<10 −3  at%) implantation of 57 Mn (T 1/2  = 1.5 min). Both Fe 3+ and Fe 2+ were detected throughout the temperature range. Three annealing stages were distinguished: (i) a broad annealing stage below room temperature leading to an increased Fe 3+ fraction; (ii) a sharp annealing stage at ∼330 K characterized by conversion of Fe 3+ to Fe 2+ and changes in the hyperfine parameters of Fe 2+ , attributed to the annealing of Ti vacancies in the vicinity of the probe atoms; and (iii) an annealing stage in the temperature range from 550 to 600 K, where all Fe ions are transformed to Fe 3+ , attributed to the annealing of the nearby O vacancies. The dissociation energy of Mn Ti –V O pairs was estimated to be 1.60(15) eV. Fe 2+ is found in an environment where it can probe the lattice structure through the nuclear quadrupole interaction evidencing the extreme radiation hardness of rutile TiO 2 . Fe 3+ is found in a paramagnetic state with slow spin–lattice relaxation which follows a ∼T n temperature dependence with 4.1 < n < 6.3 at T > 350 K. (paper)

  4. Emission properties of MEH-PPV in thin films simultaneously illuminated and annealed at different temperatures

    KAUST Repository

    Botiz, Ioan; Freyberg, Paul; Leordean, Cosmin; Gabudean, Ana-Maria; Astilean, Simion; Yang, Arnold Chang-Mou; Stingelin, Natalie

    2015-01-01

    © 2014 Elsevier B.V. All rights reserved. We report on the enhancement of photoluminescence in thin films of poly[2-methoxy-5-((2′-ethylhexyl)oxy)-1,4-phenylenvinylene], neat or embedded in polystyrene, upon illumination with light as a function of annealing temperature, with our data emphasizing the picture of a light-induced conformation change that leads to the altered photophysical response of this polymer.

  5. Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Azadeh Jafari

    2014-07-01

    Full Text Available We have reviewed the deposition of titanium nitride (TiN thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700°C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD, atomic force microscope (AFM, field emission scanning electron microscopy (FESEM, and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700°C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

  6. Influence of annealing temperature on physical properties and photocatalytic ability of g-C3N4 nanosheets synthesized through urea polymerization in Ar atmosphere

    Science.gov (United States)

    Mai Oanh, Le Thi; Hang, Lam Thi; Lai, Ngoc Diep; Phuong, Nguyen Thi; Thang, Dao Viet; Hung, Nguyen Manh; Danh Bich, Do; Minh, Nguyen Van

    2018-03-01

    The influences of annealing temperature on structure, morphology, vibration, optical properties and photocatalytic ability of g-C3N4 nanosheets synthesized from urea in Ar atmosphere were investigated in detail by using x-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Brunauer-Emmett-Teller (BET), Fourier transform infrared spectroscopy (FTIR), UV-vis absorption, and photoluminescence (PL). It was found that the preparation temperature had a great effect on structure and physical properties of g-C3N4. As the processing temperature increased from 450 °C to 650 °C, the interlayer stacking distance of g-C3N4 decreased from 3.281 Å to 3.217 Å and the lattice parameter a decreased from 5.010 Å to 4.934 Å. This indicated a denser packing fashion of g-C3N4 at high annealing temperature. Moreover, the FTIR spectra and SEM images revealed a large fraction of small polymer segments containing only a few heptazine units as annealing temperature increased. BET result indicated an increasing specific surface area as preparation temperature increased. UV-vis absorption spectra showed a decrease of the band gap energy with increasing calcination temperature which agrees well with the measured PL spectra. It was demonstrated that samples annealed at 550 °C exhibited the strongest photocatalytic activity. A decomposition of 80% and 100% of rhodamine B was obtained within respectively 1 h and 2 h under Xenon lamp irradiation. Photocatalytic result could be adequately explained based on evidences of specific surface area, average pore volume and pore size, and recombination rate of photoinduced electron-hole pairs.

  7. Annealing effect on the microstructure and magnetic properties of 14%Cr-ODS ferritic steel

    International Nuclear Information System (INIS)

    Ding, H.L.; Gao, R.; Zhang, T.; Wang, X.P.; Fang, Q.F.; Liu, C.S.

    2015-01-01

    Graphical abstract: TEM images of microstructure for 14%Cr-ODS ferritic steel annealed for 2 h at different temperatures: (a) 600 °C, (b) 800 °C, (c) 950 °C, and (d) 1150 °C, and the evolution trends of coercivity field (H_C) and Vickers microhardness for samples annealed at above temperatures for 2 h and 50 h. - Highlights: • The thermal stability of annealed 14%Cr-ODS ferritic steel was investigated. • The particle size keeps fairly constant with increasing annealing temperature. • The grain size is still 2–4 μm even after annealing for 50 h at 1150 °C. • The hardness and H_C are almost unchanged after annealing from 800 °C to 1150 °C. - Abstract: The microstructure and magnetic properties of the 14%Cr oxide dispersion strengthened (ODS) ferritic steel fabricated by sol–gel and HIP method were investigated by annealing in vacuum for 2 h (at 300, 600, 800, 950 and 1150 °C) and 50 h (at 600, 800, 950 and 1150 °C). Microstructure analysis shows that as the annealing temperature increases, the size of oxide nanoparticles becomes smaller and their dispersion in matrix becomes more homogeneous. Grain size remains stable when the annealing temperature is below 800 °C, while above 800 °C, grain size grows with the increasing annealing temperature and time. The Vickers microhardness and coercivity (H_C) display almost similar evolution trend with annealing temperature for 2 h and 50 h. No obvious recrystallization appears after 1150 °C annealing, which indicates the high microstructural stability of 14%Cr-ODS ferritic steel. The possible mechanism for above behaviors is discussed in this paper.

  8. High pressure annealing of Europium implanted GaN

    KAUST Repository

    Lorenz, K.; Miranda, S. M. C.; Alves, E.; Roqan, Iman S.; O'Donnell, K. P.; Bokowski, M.

    2012-01-01

    GaN epilayers were implanted with Eu to fluences of 1×10^13 Eu/cm2 and 1×10^15 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  9. High pressure annealing of Europium implanted GaN

    KAUST Repository

    Lorenz, K.

    2012-02-09

    GaN epilayers were implanted with Eu to fluences of 1×10^13 Eu/cm2 and 1×10^15 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  10. Effect of wheel speed and annealing temperature on microstructure and texture evolution of Ni{sub 45}Mn{sub 36.6}In{sub 13.4}Co{sub 5} ribbon

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Yan, E-mail: yanfeng@nwpu.edu.cn [State Key Laboratory of Solidification Processing Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Chen, Hong [State Key Laboratory of Solidification Processing Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Gao, Li [College of Engineering Science and Technology, Shanghai Ocean University, Shanghai 201306 (China); Wang, Haibo [College of Physics and Electronic Engineering, Taizhou University, Taizhou, Zhejiang 318000 (China); Bian, Xiaohai; Gong, Mingjie [State Key Laboratory of Solidification Processing Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China)

    2016-12-15

    Ni{sub 45}Mn{sub 36.6}In{sub 13.4}Co{sub 5} magnetic shape memory alloy was successfully produced as preferentially textured ribbon by melting spinning with different wheel speed. X-ray diffraction (XRD) and electron back scatter diffraction (EBSD) were used to study structure and texture evolution of these melt-spun ribbons. The thickness of melt-spun ribbon is 42 μm, 65 μm and 30 μm depending on wheel speed of 1 0 m/s, 15 m/s and 20 m/s, respectively. Density of α fiber texture (〈100〉//ND) vary with wheel speed changes, and is most intensive in the ribbon with wheel speed of 15 m/s. Grains of the ribbons grow after being annealed at 873 K, 973 K, 1073 K and 1173 K, recrystallization was not observed in ribbons after being annealed at 873 K but occurred in ribbons after being annealed at higher temperatures. The α fiber texture becomes weaker to some extent after annealing at different temperatures, due to new recrystallization texture formed at the process of annealing. - Highlights: •Sectional part of shape memory ribbon is firstly investigated by EBSD method. •Thickness and texture of ribbons vary with wheel speed. •Annealing temperature affect texture and microstructure evolution greatly. •Recrystallization textures were observed in ribbons after being annealed.

  11. Crystallinity and mechanical effects from annealing Parylene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jackson, Nathan, E-mail: Nathan.Jackson@tyndall.ie [Tyndall National Institute, University College Cork, Cork (Ireland); Stam, Frank; O' Brien, Joe [Tyndall National Institute, University College Cork, Cork (Ireland); Kailas, Lekshmi [University of Limerick, Limerick (Ireland); Mathewson, Alan; O' Murchu, Cian [Tyndall National Institute, University College Cork, Cork (Ireland)

    2016-03-31

    Parylene is commonly used as thin film polymer for MEMS devices and smart materials. This paper investigates the impact on bulk properties due to annealing various types of Parylene films. A thin film of Parylene N, C and a hybrid material consisting of Parylene N and C were deposited using a standard Gorham process. The thin film samples were annealed at varying temperatures from room temperature up to 300 °C. The films were analyzed to determine the mechanical and crystallinity effects due to different annealing temperatures. The results demonstrate that the percentage of crystallinity and the full-width-half-maximum value on the 2θ X-ray diffraction scan increases as the annealing temperature increases until the melting temperature of the Parylene films was achieved. Highly crystalline films of 85% and 92% crystallinity were achieved for Parylene C and N respectively. Investigation of the hybrid film showed that the individual Parylene films behave independently to each other, and the crystallinity of one film had no significant impact to the other film. Mechanical testing showed that the elastic modulus and yield strength increase as a function of annealing, whereas the elongation-to-break parameter decreases. The change in elastic modulus was more significant for Parylene C than Parylene N and this is attributed to the larger change in crystallinity that was observed. Parylene C had a 112% increase in crystallinity compared to a 61% increase for Parylene N, because the original Parylene N material was more crystalline than Parylene C so the change of crystallinity was greater for Parylene C. - Highlights: • A hybrid material consisting of Parylene N and C was developed. • Parylene N has greater crystallinity than Parylene C. • Phase transition of Parylene N due to annealing results in increased crystallinity. • Annealing caused increased crystallinity and elastic modulus in Parylene films. • Annealed hybrid Parylene films crystallinity behave

  12. Finite-time thermodynamics and simulated annealing

    International Nuclear Information System (INIS)

    Andresen, B.

    1989-01-01

    When the general, global optimization technique simulated annealing was introduced by Kirkpatrick et al. (1983), this mathematical algorithm was based on an analogy to the statistical mechanical behavior of real physical systems like spin glasses, hence the name. In the intervening span of years the method has proven exceptionally useful for a great variety of extremely complicated problems, notably NP-problems like the travelling salesman, DNA sequencing, and graph partitioning. Only a few highly optimized heuristic algorithms (e.g. Lin, Kernighan 1973) have outperformed simulated annealing on their respective problems (Johnson et al. 1989). Simulated annealing in its current form relies only on the static quantity 'energy' to describe the system, whereas questions of rate, as in the temperature path (annealing schedule, see below), are left to intuition. We extent the connection to physical systems and take over further components from thermodynamics like ensemble, heat capacity, and relaxation time. Finally we refer to finite-time thermodynamics (Andresen, Salomon, Berry 1984) for a dynamical estimate of the optimal temperature path. (orig.)

  13. Study on thermal annealing of cadmium zinc telluride (CZT) crystals

    International Nuclear Information System (INIS)

    Yang, G.; Bolotnikov, A.E.; Fochuk, P.M.; Camarda, G.S.; Cui, Y.; Hossain, A.; Kim, K.; Horace, J.; McCall, B.; Gul, R.; Xu, L.; Kopach, O.V.; James, R.B.

    2010-01-01

    Cadmium Zinc Telluride (CZT) has attracted increasing interest with its promising potential as a room-temperature nuclear-radiation-detector material. However, different defects in CZT crystals, especially Te inclusions and dislocations, can degrade the performance of CZT detectors. Post-growth annealing is a good approach potentially to eliminate the deleterious influence of these defects. At Brookhaven National Laboratory (BNL), we built up different facilities for investigating post-growth annealing of CZT. Here, we report our latest experimental results. Cd-vapor annealing reduces the density of Te inclusions, while large temperature gradient promotes the migration of small-size Te inclusions. Simultaneously, the annealing lowers the density of dislocations. However, only-Cd-vapor annealing decreases the resistivity, possibly reflecting the introduction of extra Cd in the lattice. Subsequent Te-vapor annealing is needed to ensure the recovery of the resistivity after removing the Te inclusions.

  14. Use of superheated steam to anneal the reactor pressure vessel

    International Nuclear Information System (INIS)

    Porowski, J.S.

    1994-01-01

    Thermal annealing of an embrittled Reactor Pressure Shell is the only recognized means for recovering material properties lost due to long-term exposure of the reactor walls to radiation. Reduced toughness of the material during operation is a major concern in evaluations of structural integrity of older reactors. Extensive studies performed within programs related to life extension of nuclear plants have confirmed that the thermal treatment of 850 degrees F for 168 hours on irradiated material essentially recovers material properties lost due to neutron exposure. Dry and wet annealing methods have been considered. Wet annealing involves operating the reactor at near design temperatures and pressures. Since the temperature of wet annealing must be limited to vessel design temperature of 650 degrees F, only partial recovery of the lost properties is achieved. Thus dry annealing was selected as an alternative for future development and industrial implementation to extend the safe life of reactors

  15. Resistivity behavior in isothermal annealing of Pd-H(D) alloys around 50 K

    International Nuclear Information System (INIS)

    Yamakawa, Kohji; Maeta, Hiroshi

    2004-01-01

    The behavior of electrical resistivity during hydrogen (deuterium) ordering is investigated for Pd-H(D) alloys of various hydrogen concentrations around 50 K. The disordered hydrogen (deuterium) atoms are introduced by quenching from 100 K into liquid helium immediately before isothermal annealings. The disordered atoms order by migration of the atoms during the heating-up of the specimens. On the isothermal curves of the resistivity in the high temperature range, the resistivity increases at first and then adopts a constant value dependent on the annealing temperature. On the other hand, the resistivity increases and then decreases during isothermal annealing in the low temperature range, nevertheless the ordering is progressing. The annealing time, at which the resistivity maximum appears, and the resistivity value of the maximum increase with decreasing annealing temperature. Furthermore, the decreasing resistivity after the maximum saturates to a value dependent on each annealing temperature. Therefore, it becomes clear that an equilibrium amount of ordering depends on the temperature and the resistivity increases in the early stage of hydrogen (deuterium) ordering and decreases in the later stage. The resistivity maximum in the isothermal annealing curve is caused by the nucleation and growth of ordered domains of hydrogen (deuterium) atoms

  16. Implantation annealing in GaAs by incoherent light

    International Nuclear Information System (INIS)

    Davies, D.E.; Ryan, T.G.; Soda, K.J.; Comer, J.J.

    1983-01-01

    Implanted GaAs has been successfully activated through concentrating the output of quartz halogen lamps to anneal in times of the order of 1 sec. The resulting layers are not restricted by the reduced mobilities and thermal instabilities of laser annealed GaAs. Better activation can be obtained than with furnace annealing but this generally requires maximum temperatures >= 1050degC. (author)

  17. Pulsed Q-switched ruby laser annealing of Bi implanted Si crystals investigated by channeling

    International Nuclear Information System (INIS)

    Deutch, B.I.; Shih-Chang, T.; Shang-Hwai, L.; Zu-Yao, Z.; Jia-Zeng, H.; Ren-Zhi, D.; Te-Chang, C.; De-Xin, C.

    1979-01-01

    Channeling was used to investigate pulsed, Q switched ruby-laser annealed and thermally annealed Si single crystals implanted with 40-keV Bi ions to a dose of 10 15 atoms/cm 2 . After thermal annealing, residual damage decreased with increasing annealing temperature to a minimum value of 30% at 900 0 C. The Bi atoms in substitutional sites reached a maximum value (50%) after annealing at 750 0 C but decreased with increasing annealing temperature. Out diffusion of Bi atoms occurred at temperatures higher than 625 0 C. For comparison, the residual damage disappeared almost completely after pulsed-laser annealing (30 ns pulse width, Energy, E = 3J/cm 2 ). The concentration of Bi in Si exceeded its solid solubility by an order of magnitude; 95% of Bi atoms were annealed to substitutional sites. Laser pulses of different energies were used to investigate the efficiency of annealing. (author)

  18. X-ray Diffraction Investigation of Annealing Behavior of Peened Surface Deformation Layer on Precipitation Hardening Stainless Steel

    Science.gov (United States)

    Huang, Junjie; Wang, Zhou; Gan, Jin; Yang, Ying; Huang, Feng; Wu, Gang; Meng, Qingshuai

    2018-05-01

    In order to investigate the recrystallization behavior of peened surface deformation layer of precipitation hardening stainless steel, a classic x-ray diffraction line profile analysis, Voigt method, was carried out on peened 17-4PH with different isothermal annealing temperatures. The activation energy of domain boundary migration ( Q a) and the activation energy of microstrain relaxation ( Q b) were calculated by regression analysis in different annealing temperature conditions. The results show that the value of Q a decreases with annealing temperature increasing, which is due to the influence of precipitation (ɛ-Cu) size on the movements of grain and subgrain boundaries. The maximum growth rate of ɛ-Cu particles occurs during 400 to 500 °C interval. Compared with growth behavior of domain size, microstrain relaxation behavior is less sensitive to precipitation particle size. The effects of annealing temperature and time on dislocation density are both significant when annealing temperature is lower than 500 °C. However, the effect of annealing temperature on dislocation density becomes insignificant when annealing temperature is higher than 500 °C. 300 °C annealing temperature only leads to the microstrain relaxation but nearly cannot lead to the domain size growth even if prolonging annealing time. Microstructure enhancement effect still exists in plastic deformation layer when 300 °C annealing temperature lasts for 60 min but nearly disappears when 600 °C annealing temperature lasts for 20 min.

  19. X-ray Diffraction Investigation of Annealing Behavior of Peened Surface Deformation Layer on Precipitation Hardening Stainless Steel

    Science.gov (United States)

    Huang, Junjie; Wang, Zhou; Gan, Jin; Yang, Ying; Huang, Feng; Wu, Gang; Meng, Qingshuai

    2018-04-01

    In order to investigate the recrystallization behavior of peened surface deformation layer of precipitation hardening stainless steel, a classic x-ray diffraction line profile analysis, Voigt method, was carried out on peened 17-4PH with different isothermal annealing temperatures. The activation energy of domain boundary migration (Q a) and the activation energy of microstrain relaxation (Q b) were calculated by regression analysis in different annealing temperature conditions. The results show that the value of Q a decreases with annealing temperature increasing, which is due to the influence of precipitation (ɛ-Cu) size on the movements of grain and subgrain boundaries. The maximum growth rate of ɛ-Cu particles occurs during 400 to 500 °C interval. Compared with growth behavior of domain size, microstrain relaxation behavior is less sensitive to precipitation particle size. The effects of annealing temperature and time on dislocation density are both significant when annealing temperature is lower than 500 °C. However, the effect of annealing temperature on dislocation density becomes insignificant when annealing temperature is higher than 500 °C. 300 °C annealing temperature only leads to the microstrain relaxation but nearly cannot lead to the domain size growth even if prolonging annealing time. Microstructure enhancement effect still exists in plastic deformation layer when 300 °C annealing temperature lasts for 60 min but nearly disappears when 600 °C annealing temperature lasts for 20 min.

  20. In-place thermal annealing of nuclear reactor pressure vessels

    International Nuclear Information System (INIS)

    Server, W.L.

    1985-04-01

    Radiation embrittlement of ferritic pressure vessel steels increases the ductile-brittle transition temperature and decreases the upper shelf level of toughness as measured by Charpy impact tests. A thermal anneal cycle well above the normal operating temperature of the vessel can restore most of the original Charpy V-notch energy properties. The Amry SM-1A test reactor vessel was wet annealed in 1967 at less than 343 0 C (650 0 F), and wet annealing of the Belgian BR-3 reactor vessel at 343 0 C (650 0 F) has recently taken place. An industry survey indicates that dry annealing a reactor vessel in-place at temperatures as high as 454 0 C (850 0 F) is feasible, but solvable engineering problems do exist. Economic considerations have not been totally evaluated in assessing the cost-effectiveness of in-place annealing of commercial nuclear vessels. An American Society for Testing and Materials (ASTM) task group is upgrading and revising guide ASTM E 509-74 with emphasis on the materials and surveillance aspects of annealing rather than system engineering problems. System safety issues are the province of organizations other than ASTM (e.g., the American Society of Mechanical Engineers Boiler and Pressure Vessel Code body)

  1. Effect of annealing on the mechanical and scratch properties of BCN films obtained by magnetron sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Shuyan, E-mail: xsynefu@126.com [Key Laboratory of Forest Sustainable Management and Environmental Microorganism Engineering of Heilongjiang Province, Northeast Forestry University, Harbin 150040 (China); Ma, Xinxin [School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wen, Huiying [Key Laboratory of Forest Sustainable Management and Environmental Microorganism Engineering of Heilongjiang Province, Northeast Forestry University, Harbin 150040 (China); Tang, Guangze [School of Material Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Li, Chunwei [Key Laboratory of Forest Sustainable Management and Environmental Microorganism Engineering of Heilongjiang Province, Northeast Forestry University, Harbin 150040 (China)

    2014-09-15

    Highlights: • The amorphous BCN films were annealed at different temperatures under vacuum condition. • The order degree increases with the annealing temperature increasing, and the films do not decompose even the annealing temperature rise to 1000 °C. • The nano-hardness and modulus of the films decrease with the increasing of annealing temperatures. • The critical load of BCN films is not affected by the annealing temperature, and the films have good interfacial adhesion. • The scratch resistance properties of BCN film are improved by annealing at 600 °C. - Abstract: Boron-carbon-nitride (BCN) films have been fabricated by direct current unbalanced magnetron sputtering. Boron carbide/graphite compound and a mixture of nitrogen and argon are used as target and carrier gas, respectively, during BCN synthesis. The obtained BCN films are annealed at different temperatures under vacuum condition. The effect of annealing temperature on the structure, mechanical properties and scratch behavior of the BCN films has been investigated. The results indicate that no decomposition products are found even the BCN films are annealed at 1000 °C. The hardness and elastic modulus of the films decrease with the increase of annealing temperatures. The BCN film annealed at 600 °C has the strongest scratch resistance. The friction coefficient of all BCN films is in range of 0.05 to 0.15.

  2. Effect of annealing on the mechanical and scratch properties of BCN films obtained by magnetron sputtering deposition

    International Nuclear Information System (INIS)

    Xu, Shuyan; Ma, Xinxin; Wen, Huiying; Tang, Guangze; Li, Chunwei

    2014-01-01

    Highlights: • The amorphous BCN films were annealed at different temperatures under vacuum condition. • The order degree increases with the annealing temperature increasing, and the films do not decompose even the annealing temperature rise to 1000 °C. • The nano-hardness and modulus of the films decrease with the increasing of annealing temperatures. • The critical load of BCN films is not affected by the annealing temperature, and the films have good interfacial adhesion. • The scratch resistance properties of BCN film are improved by annealing at 600 °C. - Abstract: Boron-carbon-nitride (BCN) films have been fabricated by direct current unbalanced magnetron sputtering. Boron carbide/graphite compound and a mixture of nitrogen and argon are used as target and carrier gas, respectively, during BCN synthesis. The obtained BCN films are annealed at different temperatures under vacuum condition. The effect of annealing temperature on the structure, mechanical properties and scratch behavior of the BCN films has been investigated. The results indicate that no decomposition products are found even the BCN films are annealed at 1000 °C. The hardness and elastic modulus of the films decrease with the increase of annealing temperatures. The BCN film annealed at 600 °C has the strongest scratch resistance. The friction coefficient of all BCN films is in range of 0.05 to 0.15

  3. Annealing temperature and O2 partial pressure dependence of T(sub c) in HgBa2CuO(4+delta)

    Science.gov (United States)

    Xiong, Q.; Cao, Y.; Chen, F.; Xue, Y. Y.; Chu, C. W.

    1994-01-01

    Samples of HgBa2CuO(4+delta) (Hg-1201) were annealed under various conditions. After carefully controlling annealing time, annealing temperature (T(sub a)) and O2 partial pressure (P(sub 0)), we were able to find the reversible annealing conditions for Hg-1201. Under 1 atm O2 at 260 C less than or equal to T(sub a) less than or equal to 400 C, the obtained T(sub c) is nearly the same (approximately 97 K). However, it decreases quickly with T(sub a) greater than 300 C in high vacuum (P(sub 0) approximately 10(exp -8) atm), and reaches zero at T(sub a) = 400 C. On the other hand, T(sub c) decreases with the decrease of T(sub a) in high-pressure O2 (approximately 500 atm) and reaches approximately 20 K at about 240 C. In the entire annealing region, the oxygen surplus varies significantly from 0.03 to 0.4, and a wide range of T(sub c) variation (0 goes to 97 K goes to 20 K) was obtained with anion doping alone.

  4. Estimation of effective temperatures in quantum annealers for sampling applications: A case study with possible applications in deep learning

    Science.gov (United States)

    Benedetti, Marcello; Realpe-Gómez, John; Biswas, Rupak; Perdomo-Ortiz, Alejandro

    2016-08-01

    An increase in the efficiency of sampling from Boltzmann distributions would have a significant impact on deep learning and other machine-learning applications. Recently, quantum annealers have been proposed as a potential candidate to speed up this task, but several limitations still bar these state-of-the-art technologies from being used effectively. One of the main limitations is that, while the device may indeed sample from a Boltzmann-like distribution, quantum dynamical arguments suggest it will do so with an instance-dependent effective temperature, different from its physical temperature. Unless this unknown temperature can be unveiled, it might not be possible to effectively use a quantum annealer for Boltzmann sampling. In this work, we propose a strategy to overcome this challenge with a simple effective-temperature estimation algorithm. We provide a systematic study assessing the impact of the effective temperatures in the learning of a special class of a restricted Boltzmann machine embedded on quantum hardware, which can serve as a building block for deep-learning architectures. We also provide a comparison to k -step contrastive divergence (CD-k ) with k up to 100. Although assuming a suitable fixed effective temperature also allows us to outperform one-step contrastive divergence (CD-1), only when using an instance-dependent effective temperature do we find a performance close to that of CD-100 for the case studied here.

  5. Resistance and magnetoresistance of annealed amorphous carbon films containing Fe3C nanograins

    International Nuclear Information System (INIS)

    Lee Yuhua; Han Taichun; Wur, C.-S.

    2004-01-01

    The temperature-dependent resistance and the field-dependent magnetoresistance were measured for films annealed at temperatures from 250 deg. C to 550 deg. C for a period of 60 min. Results of temperature-dependent resistance show electrical tunneling conductance in the films annealed at T a =250 deg. C and 350 deg. C only. The largest magnetoresistance ratio (MR) of 23% at temperature T=2 K was observed for T a =350 deg. C. The variations of both the temperature dependence of resistance and the magnetoresistance with the annealing temperature are discussed

  6. Susceptor and proximity rapid thermal annealing of InP

    International Nuclear Information System (INIS)

    Katz, A.; Pearton, S.J.; Geva, M.

    1990-01-01

    This paper presents a comparison between the efficiency of InP rapid thermal annealing within two types of SiC-coated graphite susceptors and by using the more conventional proximity approach, in providing degradation-free substrate surface morphology. The superiority of annealing within a susceptor was clearly demonstrated through the evaluation of AuGe contact performance to carbon-implanted InP substrates, which were annealed to activate the implants prior to the metallization. The susceptor annealing provided better protection against edge degradation, slip formation and better surface morphology, due to the elimination of P outdiffusion and pit formation. The two SiC-coated susceptors that were evaluated differ from each other in their geometry. The first type must be charged with the group V species prior to any annealing cycle. Under the optimum charging conditions, effective surface protection was provided only to one anneal (750 degrees C, 10s) of InP before charging was necessary. The second contained reservoirs for provision of the group V element partial pressure, enabled high temperature annealing at the InP without the need for continual recharging of the susceptor. Thus, one has the ability to subsequentially anneal a lot of InP wafers at high temperatures without inducing any surface deterioration

  7. High-temperature stability of chemically vapor-deposited tungsten-silicon couples rapid thermal annealed in ammonia and argon

    Energy Technology Data Exchange (ETDEWEB)

    Broadbent, E.K.; Morgan, A.E.; Flanner, J.M.; Coulman, B.; Sadana, D.K.; Burrow, B.J.; Ellwanger, R.C.

    1988-12-15

    A rapid thermal anneal (RTA) in an NH/sub 3/ ambient has been found to increase the thermal stability of W films chemically vapor deposited (CVD) on Si. W films deposited onto single-crystal Si by low-pressure CVD were rapid thermal annealed at temperatures between 500 and 1100 /sup 0/C in NH/sub 3/ and Ar ambients. The reactions were studied using Rutherford backscattering spectrometry, x-ray diffraction, Auger electron spectroscopy, transmission electron microscopy, and four-point resistivity probe. High-temperature (greater than or equal to1000 /sup 0/C) RTA in Ar completely converted W into the low resistivity (31 ..mu cap omega.. cm) tetragonal WSi/sub 2/ phase. In contrast, after a prior 900 /sup 0/C RTA in NH/sub 3/, N inclusion within the W film and at the W/Si interface almost completely suppressed the W-Si reaction. Detailed examination, however, revealed some patches of WSi/sub 2/ formed at the interface accompanied by long tunnels extending into the substrate, and some crystalline precipitates in the substrate close to the interface. The associated interfacial contact resistance was only slightly altered by the 900 /sup 0/C NH/sub 3/ anneal. The NH/sub 3/-treated W film acted as a diffusion barrier in an Al/W/Si contact metallurgy up to at least 550 /sup 0/C, at which point some increase in contact resistance was measured.

  8. Thermal annealing of high dose radiation induced damage at room temperature in alkali halides. Stored energy, thermoluminiscence and colouration

    International Nuclear Information System (INIS)

    Delgado, L.

    1980-01-01

    The possible relation between stored energy, thermoluminiscence and colour centre annealing in gamma and electron irradiated alkali halides is studied. Thermoluminiscence occurs at temperature higher than the temperature at which the main stored energy peak appears. No stored energy release is detected in additively coloured KCl samples. Plastic deformation and doping with Ca and Sr induce a stored energy spectrum different from the spectrum observed in pure and as cleaved samples, but the amount of stored energy does not change for a given irradiation dose. Capacity of alkali halides to sotore energy by irradiation increases as the cation size decreases. It appears that most of the observed release is not related to annealing processes of the radiation induced anion Frenkel pairs. The existence of damage in the cation sublattice with which this energy release might be related is considered. (auth.)

  9. Effects of surface polishing and annealing on the optical conductivity of intermetallic compounds

    CERN Document Server

    Rhee, J Y

    1999-01-01

    The optical conductivity spectra of several intermetallic compounds were measured by spectroscopic ellipsometry. Three spectra were measured for each compound; just after the sample was mechanically polished, at high temperature, and after the sample was annealed at 110 .deg. C for at least one day and cooled to room temperature. An equiatomic FeTi alloy showed the typical effects of annealing after mechanical polishing of surface. The spectrum after annealing had a larger magnitude and sharper structures than the spectrum before annealing. We also observed shifts of peaks in the spectrum. A relatively low-temperature annealing gave rise to unexpectedly substantial effects, and the effects were explained by recrystallization and/or a disorder -> order transition of the surface of the sample which was damaged and, hence, became highly disordered by mechanical polishing. Similar effects were also observed when the sample temperature was lowered. The observed changes upon annealing could partly be explained by p...

  10. Propagating self-sustained annealing of radiation-induced interstitial complexes

    International Nuclear Information System (INIS)

    Bokov, P M; Selyshchev, P A

    2016-01-01

    A propagating self-sustained annealing of radiation induced defects as a result of thermal-concentration instability is studied. The defects that are considered in the model are complexes. Each of them consists of one atom of impunity and of one interstitial atom. Crystal with defects has extra energy which is transformed into heat during defect annealing. Simulation of the auto-wave of annealing has been performed. The front and the speed of the auto-wave have been obtained. It is shown that annealing occurs in a narrow region of time and space. There are two kinds of such annealing behaviour. In the first case the speed of the auto-wave oscillates near its constant mean value and the front of temperature oscillates in a complex way. In the second case the speed of propagation is constant and fronts of temperature and concentration look like sigmoid functions. (paper)

  11. Embrittlement recovery due to annealing of reactor pressure vessel steels

    International Nuclear Information System (INIS)

    Eason, E.D.; Wright, J.E.; Nelson, E.E.; Odette, G.R.; Mader, E.V.

    1996-01-01

    Embrittlement of reactor pressure vessels (RPVs) can be reduced by thermal annealing at temperatures higher than the normal operating conditions. Although such an annealing process has not been applied to any commercial plants in the United States, one US Army reactor, the BR3 plant in Belgium, and several plants in eastern Europe have been successfully annealed. All available Charpy annealing data were collected and analyzed in this project to develop quantitative models for estimating the recovery in 30 ft-lb (41 J) Charpy transition temperature and Charpy upper shelf energy over a range of potential annealing conditions. Pattern recognition, transformation analysis, residual studies, and the current understanding of the mechanisms involved in the annealing process were used to guide the selection of the most sensitive variables and correlating parameters and to determine the optimal functional forms for fitting the data. The resulting models were fitted by nonlinear least squares. The use of advanced tools, the larger data base now available, and insight from surrogate hardness data produced improved models for quantitative evaluation of the effects of annealing. The quality of models fitted in this project was evaluated by considering both the Charpy annealing data used for fitting and the surrogate hardness data base. The standard errors of the resulting recovery models relative to calibration data are comparable to the uncertainty in unirradiated Charpy data. This work also demonstrates that microhardness recovery is a good surrogate for transition temperature shift recovery and that there is a high level of consistency between the observed annealing trends and fundamental models of embrittlement and recovery processes

  12. The effect of humidity on annealing of polymer optical fibre bragg gratings

    DEFF Research Database (Denmark)

    Woyessa, Getinet; Nielsen, Kristian; Bang, Ole

    2015-01-01

    The effect of humidity on annealing of PMMA based microstructured polymer optical fiber (mPOF) Bragg gratings is studied. Polymer optical fibers (POFs) are annealed in order to release stress formed during the fabrication process. Un-annealed fibers will have high hysteresis and low sensitivity...... to humidity, particularly when operated at high temperature. Typically annealing of PMMA POFs is done at 80oC in an oven with no humidity control and therefor at low humidity. The response to humidity of PMMA FBGs annealed at different levels of humidity at the same temperature has also been studied. PMMA...

  13. Effects of pre-irradiation annealing at high temperature on optical absorption and electron paramagnetic resonance of natural pumpellyite mineral

    International Nuclear Information System (INIS)

    Javier-Ccallata, Henry; Filho, Luiz Tomaz; Sartorelli, Maria L.; Watanabe, Shigueo

    2013-01-01

    Highlights: •Natural pumpellyite mineral presents superposition bands around 900 and 1060 nm due Fe 2+ and Fe 3+ . •High temperature annealing influences the EPR and OA spectra. •The behavior of EPR line for 800 and 900 °C can be attributed to forbidden dd transitions due the Fe 3+ . -- Abstract: Natural silicate mineral of pumpellyite, Ca 2 MgAl 2 (SiO 4 )(Si 2 O 7 )(OH) 2 ·(H 2 O), point group A2/m, has been studied concerning high temperature annealing and γ-radiation effects on Optical Absorption (OA) and Electron Paramagnetic Resonance (EPR) properties. Chemical analysis revealed that besides Si, Al, Ca and Mg, other oxides i.e., Fe, Mn, Na, K, Ti and P are present in the structure as impurities. OA measurements of natural and annealed pumpellyite revealed several bands in the visible region due to spin forbidden transitions of Fe 2+ and Fe 3+ . The behaviour of bands around 900 and 1060 nm, with pre-annealing and γ radiation dose, indicating a transition Fe 2+ → e − + Fe 3+ . On the other hand, EPR measurements reveal six lines of Mn 2+ , and satellites due to hyperfine interaction, superimposed on the signal of Fe 3+ around of g = 2. For heat treatment from 800 °C the signal grows significantly and for 900 °C a strong signal of Fe 3+ hides all Mn 2+ lines. The strong growth of this signal indicates that the transitions are due to Fe 3+ dipole–dipole interactions

  14. Development of fast heating electron beam annealing setup for ultra high vacuum chamber

    Energy Technology Data Exchange (ETDEWEB)

    Das, Sadhan Chandra [UGC-DAE Consortium For Scientific Research, University Campus, Khandwa Road, Indore 452 001, MP (India); School of Electronics, Devi Ahilya University, Indore 452001, MP (India); Institute of Physics, University of Greifswald, Felix Hausdroff Str. 6 (Germany); Majumdar, Abhijit, E-mail: majuabhijit@gmail.com, E-mail: majumdar@uni-greifswald.de; Hippler, R. [Institute of Physics, University of Greifswald, Felix Hausdroff Str. 6 (Germany); Katiyal, Sumant [School of Electronics, Devi Ahilya University, Indore 452001, MP (India); Shripathi, T. [UGC-DAE Consortium For Scientific Research, University Campus, Khandwa Road, Indore 452 001, MP (India)

    2014-02-15

    We report the design and development of a simple, electrically low powered and fast heating versatile electron beam annealing setup (up to 1000 °C) working with ultra high vacuum (UHV) chamber for annealing thin films and multilayer structures. The important features of the system are constant temperature control in UHV conditions for the temperature range from room temperature to 1000 ºC with sufficient power of 330 W, at constant vacuum during annealing treatment. It takes approximately 6 min to reach 1000 °C from room temperature (∼10{sup −6} mbar) and 45 min to cool down without any extra cooling. The annealing setup consists of a UHV chamber, sample holder, heating arrangement mounted on suitable UHV electrical feed-through and electronic control and feedback systems to control the temperature within ±1 ºC of set value. The outside of the vacuum chamber is cooled by cold air of 20 °C of air conditioning machine used for the laboratory, so that chamber temperature does not go beyond 50 °C when target temperature is maximum. The probability of surface oxidation or surface contamination during annealing is examined by means of x-ray photoelectron spectroscopy of virgin Cu sample annealed at 1000 °C.

  15. Development of fast heating electron beam annealing setup for ultra high vacuum chamber

    International Nuclear Information System (INIS)

    Das, Sadhan Chandra; Majumdar, Abhijit; Hippler, R.; Katiyal, Sumant; Shripathi, T.

    2014-01-01

    We report the design and development of a simple, electrically low powered and fast heating versatile electron beam annealing setup (up to 1000 °C) working with ultra high vacuum (UHV) chamber for annealing thin films and multilayer structures. The important features of the system are constant temperature control in UHV conditions for the temperature range from room temperature to 1000 ºC with sufficient power of 330 W, at constant vacuum during annealing treatment. It takes approximately 6 min to reach 1000 °C from room temperature (∼10 −6 mbar) and 45 min to cool down without any extra cooling. The annealing setup consists of a UHV chamber, sample holder, heating arrangement mounted on suitable UHV electrical feed-through and electronic control and feedback systems to control the temperature within ±1 ºC of set value. The outside of the vacuum chamber is cooled by cold air of 20 °C of air conditioning machine used for the laboratory, so that chamber temperature does not go beyond 50 °C when target temperature is maximum. The probability of surface oxidation or surface contamination during annealing is examined by means of x-ray photoelectron spectroscopy of virgin Cu sample annealed at 1000 °C

  16. The Effects of Annealing Temperatures on Composition and Strain in Si x Ge1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100).

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-02-24

    The effects of annealing temperatures on composition and strain in Si x Ge 1- x , obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm -1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of Si x Ge 1- x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  17. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

    Science.gov (United States)

    Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

    2014-01-01

    The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100°C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~00 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance. PMID:28788521

  18. The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100

    Directory of Open Access Journals (Sweden)

    Mastura Shafinaz Zainal Abidin

    2014-02-01

    Full Text Available The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100 substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100 orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

  19. Effects of annealing temperature on the structural, mechanical and electrical properties of flexible bismuth telluride thin films prepared by high-pressure RF magnetron sputtering

    Science.gov (United States)

    Singkaselit, Kamolmad; Sakulkalavek, Aparporn; Sakdanuphab, Rachsak

    2017-09-01

    In this work Bi x Te y thin films were deposited on polyimide substrate by a high-pressure RF magnetron sputtering technique. The deposited condition was maintained using a high pressure of 1.3  ×  10-2 mbar. The as-deposited films show Bi2Te3 structure with Te excess phase (Te-rich Bi2Te3). After that, as-deposited films were annealed in the vacuum chamber under the N2 flow at temperatures from 250 to 400 °C for one hour. The microstructure, cross-section, [Bi]:[Te] content, and the mechanical, electrical and thermoelectric properties of as-deposited and different annealed films were investigated. It was found that the annealing temperature enhanced the crystallinity and film density for the temperature range 250-300 °C. However, the crystal structure of Bi2Te3 almost changed to the BiTe structure after annealing the films above 350 °C, due to the re-evaporation of Te. Nano-indentation results and cross-section images indicated that the hardness of the films related to the film density. The maximum hardness of 2.30 GPa was observed by annealing the films at 300 °C. As a result of an improvement in crystallinity and phase changes, the highest power factor of 11.45  ×  10-4 W m-1K-2 at 300 °C with the carrier concentration and mobility of 6.15  ×  1020 cm-3 and 34.03 cm2 V-1 s-1, respectively, was achieved for the films annealed at 400 °C. Contribution at the 4th Southeast Asia Conference on Thermoelectrics 2016 (SACT 2016), 15-18 December 2016, Da Nang City, Vietnam.

  20. Mechanisms of aluminium-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers.

    Science.gov (United States)

    Wang, J Y; Wang, Z M; Jeurgens, L P H; Mittemeijer, E J

    2009-06-01

    Aluminium-induced crystallization (ALIC) of amorphous Si and subsequent layer exchange (ALILE) occur in amorphous-Si/polycrystalline-Al bilayers (a-Si/c-Al) upon annealing at temperatures as low as 165 degrees C and were studied by X-ray diffraction and Auger electron spectroscopic depth profiling. It follows that: (i) nucleation of Si crystallization is initiated at Al grain boundaries and not at the a-Si/c-Al interface; (ii) low-temperature annealing results in a large Si grain size in the continuous c-Si layer produced by ALILE. Thermodynamic model calculations show that: (i) Si can "wet" the Al grain boundaries due to the favourable a-Si/c-Al interface energy (as compared to the Al grain-boundary energy); (ii) the wetting-induced a-Si layer at the Al grain boundary can maintain its amorphous state only up to a critical thickness, beyond which nucleation of Si crystallization takes place; and (iii) a tiny driving force controls the kinetics of the layer exchange.

  1. Effects of deposition temperatures and annealing conditions on the microstructural, electrical and optical properties of polycrystalline Al-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Joon-Ho [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Kyoung-Kook [Department of Nano-Optical Engineering, Korea Polytechnic University, Gyeonggi 429-793 (Korea, Republic of); Seong, Tae-Yeon, E-mail: tyseong@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2011-01-15

    Al-doped ZnO (AZO, ZnO:Al{sub 2}O{sub 3} = 98:2 wt%) films are deposited on different substrates by an RF magnetron sputtering and subsequently annealed at three different conditions to investigate the microstructural, electrical, and optical properties. X-ray diffraction and scanning electron microscope results show that all the samples are polycrystalline and the samples rapid-thermal-annealed at 900 deg. C in an N{sub 2} ambient contain larger grains compared to the furnace-annealed samples. It is shown that the sample deposited at room temperature on the sapphire gives a resistivity of 5.57 x 10{sup -4} {Omega} cm when furnace-annealed at 500 deg. C in a mixture of N{sub 2}:H{sub 2} (9:1). It is also shown that the Hall mobility vs. carrier concentration ({mu}-n) relation is divided into two groups, depending on the annealing conditions, namely, either rapid-thermal annealing or furnace annealing. The relations are described in terms of either grain boundary scattering or ionized impurity scattering mechanism. In addition, the samples produce fairly high transmittance of 91-96.99% across the wavelength region of 400-1100 nm. The optical bandgaps of the samples increase with increasing carrier concentration.

  2. Vessel annealing. Will it become a routine procedure?

    International Nuclear Information System (INIS)

    Davies, M.

    1995-01-01

    The effect of neutron radiation on the reactor pressure vessel and the influence of annealing performed to eliminate this effect are explained. Some practical examples are given. A simple heat treatment at 450 degC for 168 h is sufficient to eliminate a major fraction of the radiation effect in the displacement of the transition temperature from the brittle state to the tough state. Some observations indicate that at this temperature, excessive energy recovery takes place at the upper toughness limit in the Charpy diagram. The annealing furnace manufactured by the SKODA company is described. The furnace consists of heating elements in 13 zones and 5 heating sections. The maximum power of each element is 75 kW, the total power of the furnace is 975 kW. The annealing procedure and its results are briefly outlined for the reactor pressure vessel at unit 2 of the Jaslovske Bohunice NPP. Reactor pressure vessel annealing is proposed for the Marble Hill NPP which has been shut down. Preparatory activities for annealing are also under way at the Loviisa NPP. (J.B.)

  3. Annealing behaviour of a nanostructured Cu–45 at.%Ni alloy

    DEFF Research Database (Denmark)

    Tian, Hui; Suo, H. L.; Mishin, Oleg

    2013-01-01

    The microstructure and crystallographic texture have been investigated in a Cu–45 at.%Ni alloy after heavy rolling and subsequent annealing at different temperatures. Cold-rolling to a von Mises strain of 5.7 produced a sample with an average boundary spacing along the normal direction of ~70 nm...... and a large fraction of high-angle boundaries (HABs), ~70 %. Annealing of this sample for 1 h at temperatures ≤450 °C causes structural coarsening, during which the fraction of HABs decreases. Annealing at higher temperatures results in pronounced discontinuous recrystallization accompanied by twinning. Large...... frequencies of twin boundaries contribute to high HAB fractions measured in the as-recrystallized condition. Cube-oriented grains demonstrate a size advantage compared to grains of other orientations, thus creating a strong cube texture in the recrystallized material. Further annealing of the recrystallized...

  4. The influences of anneal temperature and cooling rate on microstructure and tensile properties of laser deposited Ti–4Al–1.5Mn titanium alloy

    International Nuclear Information System (INIS)

    Tian, X.J.; Zhang, S.Q.; Wang, H.M.

    2014-01-01

    Highlights: • We study the heat treatment parameters of laser deposited near-α titanium alloy. • Microstructure/tensile property relationships are demonstrated and discussed. • Higher cooling rate leads to finer microstructure and higher strength. • Higher anneal temperature promotes strength without ductility obviously decreased. - Abstract: As a metal near-net-shape manufacturing technology, direct laser fabrication has a great potential to reduce costs and delivery time and received an intense attention in the field of titanium alloy aerospace components fabrications. However, the laser deposited titanium alloys usually have equivalent strength and lower ductility compared to the wrought counterparts due to their lamellar microstructure. To investigate the responses of laser deposit titanium alloy Ti–4Al–1.5Mn to anneal parameters, various anneal temperatures and cooling rates were applied in this study. Microstructures were examined by Optical Microscope (OM) and Scanning Electron Microscope (SEM). Microhardness test and room temperature tensile tests were employed to evaluate the tensile properties of the as-deposited and annealed specimens. Results show that air cooling from the α + β phase region generates a microstructure composed of coarse primary α plates and fine lamellar transformed β, while water quenching produces similar but much finer microstructure. Moreover, higher cooling rate generates more area fraction of fine transformed β. With increasing anneal temperature, the ultimate tensile strength and yield strength increase for both cooling methods. Moreover, higher cooling rate leads to higher strength as expected. It is worth noting that both the strength and ductility of the laser deposited alloy improved by water quenched from the α + β duplex phase region. The improved tensile properties were mainly owing to the fine lamellar transformed β in the special bimodal microstructure

  5. Effect of synthesis methods with different annealing temperatures on micro structure, cations distribution and magnetic properties of nano-nickel ferrite

    Energy Technology Data Exchange (ETDEWEB)

    El-Sayed, Karimat [XRD Lab, Physics Department, Faculty of Science, Ain-Shams University, Cairo (Egypt); Mohamed, Mohamed Bakr, E-mail: mbm1977@yahoo.com [XRD Lab, Physics Department, Faculty of Science, Ain-Shams University, Cairo (Egypt); Hamdy, Sh.; Ata-Allah, S.S. [Reactor Physics Department, NRC, Atomic Energy Authority, P.O. Box 13759, Cairo (Egypt)

    2017-02-01

    Nano-crystalline NiFe{sub 2}O{sub 4} was synthesized by citrate and sol–gel methods at different annealing temperatures and the results were compared with a bulk sample prepared by ceramic method. The effect of methods of preparation and different annealing temperatures on the crystallize size, strain, bond lengths, bond angles, cations distribution and degree of inversions were investigated by X-ray powder diffraction, high resolution transmission electron microscope, Mössbauer effect spectrometer and vibrating sample magnetometer. The cations distributions were determined at both octahedral and tetrahedral sites using both Mössbauer effect spectroscopy and a modified Bertaut method using Rietveld method. The Mössbauer effect spectra showed a regular decrease in the hyperfine field with decreasing particle size. Saturation magnetization and coercivity are found to be affected by the particle size and the cations distribution. - Highlights: • Annealed nano NiFe{sub 2}O{sub 4} was prepared by different methods. • The crystallite sizes are critical. • Mössbauer spectra show superparamagnetic doublet. • Cations distributions by MÓ§ssbauer and Bertaut method are constituents. • Cations distribution are significantly affects the magnetic properties.

  6. Influence of annealing time and temperature on the Fe3Al intermetallic alloys microstructure modification

    Directory of Open Access Journals (Sweden)

    K. Garbala

    2011-04-01

    Full Text Available There is an industry interesting in intermetallic alloys in recent years. There are widely possibilities to adopt this kind of materials for structural units. More expensive materials can be replaced by them. A property which limits their wider application is the low plasticity at environment and elevated temperatures. In paper the results of the thermal microstructure modification are shown. To this end, the influence of annealing time and temperature on the intermetallic phase Fe3Al grain size was investigated. The impact of these factors on micro-hardness was examined as well. It was found that these operations cause the grain size reduction and the micro-hardness decrease.

  7. Repair behavior of He+-irradiated W-Y2O3 composites after different temperature-isochronal annealing experiments

    Science.gov (United States)

    Yao, Gang; Tan, Xiao-Yue; Luo, Lai-Ma; Zan, Xiang; Liu, Jia-Qin; Xu, Qiu; Zhu, Xifao-Yong; Wu, Yu-Cheng

    2018-01-01

    W-2%Y2O3 composites were prepared by wet chemical and powder metallurgy. Commercial roll tungsten was selected as a comparative sample in the He+ irradiation experiment. The experiment was conducted under He+ beam energy of 50 eV, irradiation dose of approximately 9.9 × 1024 ions/m2, and temperature of 1503-1553 K. The samples were annealed at 1173, 1373, and 1573 K for 1 h. The irradiation surface was observed in situ. The W-2%Y2O3 composites and pure tungsten displayed different grain orientation damage morphologies. In addition, the fuzzy structure was more likely to converge densely at the phase interface. Annealing repairs material surface irradiation damage, whereas the phase interface acts as a He+ migration channel.

  8. Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Kuo-Ming; Huang, Chao-Hsien; Lin, Shiao-Chi; Wu, Jong-Ching [Department of Physics and Taiwan SPIN Research Center, National Changhua University of Education, Changhua 50007 (China); Kao, Ming-Jer; Tsai, Ming-Jinn [Industrial Technology Research Institute, Hsinchu 31040 (China); Horng, Lance

    2007-12-15

    In this study, the transient annealing effect on the switching behavior of microstructured Co{sub 60}Fe{sub 20}B{sub 20}-based magnetic tunnel junctions has been studied through magnetoresistance measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta(20)/PtMn(15)/CoFeB(3)/Al(0.7)-oxide/CoFeB(2)/Ru(8)/Ta(40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200{proportional_to}250 C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 C annealing and results in less damage at temperature of 350 C and 400 C. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Wu, Kuo-Ming; Huang, Chao-Hsien; Lin, Shiao-Chi; Wu, Jong-Ching; Kao, Ming-Jer; Tsai, Ming-Jinn; Horng, Lance

    2007-01-01

    In this study, the transient annealing effect on the switching behavior of microstructured Co 60 Fe 20 B 20 -based magnetic tunnel junctions has been studied through magnetoresistance measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta(20)/PtMn(15)/CoFeB(3)/Al(0.7)-oxide/CoFeB(2)/Ru(8)/Ta(40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200∝250 C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 C annealing and results in less damage at temperature of 350 C and 400 C. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Effect of the Low-Temperature Annealing on Zn-Doped Indium-Tin-Oxide Films for Silicon Heterojunction Solar Cells

    Science.gov (United States)

    Lee, Seunghun; Lee, Jong-Han; Tark, Sung Ju; Choi, Suyoung; Kim, Chan Seok; Lee, Jeong Chul; Kim, Won Mok; Kim, Donghwan

    2012-10-01

    The effects of the low-temperature annealing on Zn-doped indium-tin-oxide (ITO) films such as the electrical, optical and structural properties were investigated. Zn-doped ITO films were fabricated by rf magnetron sputtering of ITO and Al-doped ZnO (AZO) targets on corning glass at room temperature. The content of Zn increased with increasing the power of AZO target. The carrier concentration of films shows the decreasing behaviour with increasing the content of Zn, due to a carrier compensation originating from the substitution of a doped Zn for an In or interstitial site. After the low-temperature annealing at 180 °C in vacuum, all films were slightly decreased a carrier concentration and increased the hall mobility because of the absorption of oxygen on the surface films. In addition, the average transmittance did not show a considerable change and had a high values over 80%. Especially, the Zn-doped ITO with atomic ratio of Zn/(In+Zn) of 6.8 at. % had the resistivity of 4×10-4 Ω cm, the highest hall mobility of 41 cm2 V-1 s-1, and the average transmittance of 82%.

  11. Evolution of grain boundary character distributions in alloy 825 tubes during high temperature annealing: Is grain boundary engineering achieved through recrystallization or grain growth?

    International Nuclear Information System (INIS)

    Bai, Qin; Zhao, Qing; Xia, Shuang; Wang, Baoshun; Zhou, Bangxin; Su, Cheng

    2017-01-01

    Grain boundary engineering (GBE) of nickel-based alloy 825 tubes was carried out with different cold drawing deformations by using a draw-bench on a factory production line and subsequent annealing at various temperatures. The microstructure evolution of alloy 825 during thermal-mechanical processing (TMP) was characterized by means of the electron backscatter diffraction (EBSD) technique to study the TMP effects on the grain boundary network and the evolution of grain boundary character distributions during high temperature annealing. The results showed that the proportion of ∑ 3 n coincidence site lattice (CSL) boundaries of alloy 825 tubes could be increased to > 75% by the TMP of 5% cold drawing and subsequent annealing at 1050 °C for 10 min. The microstructures of the partially recrystallized samples and the fully recrystallized samples suggested that the proportion of low ∑ CSL grain boundaries depended on the annealing time. The frequency of low ∑ CSL grain boundaries increases rapidly with increasing annealing time associating with the formation of large-size highly-twinned grains-cluster microstructure during recrystallization. However, upon further increasing annealing time, the frequency of low ∑ CSL grain boundaries decreased markedly during grain growth. So it is concluded that grain boundary engineering is achieved through recrystallization rather than grain growth. - Highlights: •The grain boundary engineering (GBE) is applicable to 825 tubes. •GBE is achieved through recrystallization rather than grain growth. •The low ∑ CSL grain boundaries in 825 tubes can be increased to > 75%.

  12. Microstructural evolution and pitting resistance of annealed lean duplex stainless steel UNS S32304

    International Nuclear Information System (INIS)

    Zhang Ziying; Han Dong; Jiang Yiming; Shi Chong; Li Jin

    2012-01-01

    Highlights: ► The relationship between pitting corrosion resistance and annealing temperature for UNS S32304 was systemically studied. ► The specimens annealed at 1080 °C for 1 h, quenched in water exhibit the best pitting corrosion resistance. ► The relationship between microstructural evolution and pitting resistance of annealed UNS S32304 was discussed in detail. ► The pitting corrosion resistance is consistent with pitting resistance equivalent number of weaker phase for UNS S32304 alloy. - Abstract: The effect of annealing temperature in the range from 1000 to 1200 °C on the pitting corrosion behavior of duplex stainless steel UNS S32304 was investigated by the potentiodynamic polarization and potentiostatic critical pitting temperature techniques. The microstructural evolution and pit morphologies were studied using a scanning electron microscopy with energy dispersive X-ray spectroscopy. The results demonstrated that the nucleation of metastable pits transformed from austenite phase to ferrite phase with the increasing annealing temperature. As the annealing temperature increased, the pitting corrosion resistance firstly increased and then decreased. The highest pitting corrosion resistance was obtained at 1080 °C with the highest critical pitting temperature value and pitting nucleation resistance. The results could be well explained by the microstructural evolution of ferrite and austenite phases induced by annealing treatment.

  13. Effects of thermal annealing on the performance of Al/ZnO nanorods/Pt structure ultraviolet photodetector

    International Nuclear Information System (INIS)

    Zhou Hai; Fang Guojia; Liu Nishuang; Zhao Xingzhong

    2011-01-01

    Highlights: → Schottky barrier ultraviolet photodetectors were obtained by sputtering Pt electrode and evaporating Al electrode on the top of ZnO nanorod arrays with thermal treatment. When annealing temperature was up to 300 deg. C, the performance of the PDs was improved with the great decrease of response and recovery times. → For annealing temperature at 300 deg. C and above, the responsivity decreases with increasing annealing temperature. → The ratio of detectivity (D254* to D546*) was calculated as high as 103 for all PDs annealed at 300 deg. C and above. - Abstract: ZnO nanorod arrays were fabricated on ZnO coated glass substrate by hydrothermal method. Schottky barrier ultraviolet photodetectors (PDs) were obtained by sputtering Pt electrode and evaporating Al electrode on the top of ZnO nanorod arrays with thermal treatment. It is illustrated that Schottky contacts at the electrode/ZnO NRs interface were formed at the annealing temperature of 300 deg. C and above. When annealing temperature was up to 300 o C, the performance of the PDs was improved with the great decrease of response and recovery times. At the forward bias of 2 V, the Schottky contact PDs showed the biggest responsivity and the best detectivity at the annealing temperature of 300 deg. C. For annealing temperature at 300 deg. C and above, the responsivity decreases with increasing annealing temperature and the ratio of detectivity (D 254 * to D 546 *) was calculated as high as 10 3 for all PDs annealed at 300 deg. C and above.

  14. Influence of substrate temperature and annealing on structural and optical properties of TiO{sub 2} films deposited by reactive e-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Pjević, D., E-mail: dejanp@vinca.rs [VINČA Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Marinković, T.; Savić, J.; Bundaleski, N.; Obradović, M.; Milosavljević, M. [VINČA Institute of Nuclear Sciences, University of Belgrade, PO Box 522, 11001 Belgrade (Serbia); Kulik, M. [Frank Laboratory of Neutron Physics, JINR, Joliot-Curie St. 6, Dubna 141980, Moscow Region (Russian Federation)

    2015-09-30

    The influence of deposition and post-deposition annealing parameters on the structure and optical properties of TiO{sub 2} thin films synthesized by reactive e-beam evaporation is reported. Pure Ti (99.9%) was evaporated in oxygen atmosphere to form thin films on Si (100) and glass substrates. Depositions were conducted on substrates held at room temperature and at 200–400 °C heated substrates. Post-deposition annealing was done for 3 h at 500 °C in air. Compositional and structural studies were performed by Rutherford backscattering spectrometry, X-ray diffraction, and X-ray photoelectron spectroscopy, and optical properties were studied by ultraviolet–visible spectroscopy and analytically by pointwise unconstrained minimization approach method. It was found that both the structure and optical properties of the films are strongly influenced by the deposition and processing parameters. All deposited samples showed good stoichiometry of Ti:O ~ 1:2. Depending on the substrate temperature and oxygen pressure in the chamber during the deposition, anatase–rutile mixed films were obtained, and in some cases TiO and Ti{sub 2}O{sub 3} phases were observed. Substrate deposition temperature appears to play the major role on the final structure of the films, while post-deposition annealing adds up for the lack of oxygen in some cases and invokes crystal grain growth of already initiated phases. The results can be interesting towards the development of TiO{sub 2} thin films with defined structure and optical properties. - Highlights: • TiO{sub 2} films were deposited by reactive e-beam evaporation. • Structure and properties were studied as a function of deposition temperature. • Stoichiometry of as-deposited films was Ti:O ~ 1:2, containing different Ti-O phases. • Post-deposition annealing yielded phase transformation, affecting the properties. • Refractive index increases with the substrate deposition temperature.

  15. Structural transformation of implanted diamond layers during high temperature annealing

    International Nuclear Information System (INIS)

    Rubanov, S.; Fairchild, B.A.; Suvorova, A.; Olivero, P.; Prawer, S.

    2015-01-01

    In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond–air interface. The real quality of this interface could depend on degree of graphitization of the amorphous damage layers after annealing. In the present work the graphitization process was studied using conventional and analytical TEM. It was found that annealing at 550 °C results in a partial graphitization of the implanted volume with formation of the nano-crystalline graphitic phase sandwiched between layers of tetrahedral amorphous carbon. Annealing at 1400 °C resulted in complete graphitization of the amorphous layers. The average size of graphite nano-crystals did not exceed 5 nm with predominant orientation of c-planes normal to the sample surface.

  16. Influence of rolling and annealing conditions on texture and mechanical properties of zirconium (1960)

    International Nuclear Information System (INIS)

    Orssaud, J.

    1958-06-01

    Rolling and annealing textures of KROLL zirconium samples at several rolling rates were studied by pole figures with an automatic recorder versus the position in the sheet thickness. Tensile tests, hardness measurements and micrographic examinations allowed to study the evolution of the recrystallization and the variation of the mechanical properties after rolling and/or annealing. Annealing textures slightly varies with the annealing temperature. Annealing at 500 deg. C gives several peculiarities. This temperature seems characteristic in the study of zirconium. (author) [fr

  17. Effect of isothermal annealing on the compressive strength of a ZrAlNiCuNb metallic glass

    International Nuclear Information System (INIS)

    Song Min; He Yuehui

    2011-01-01

    Research highlights: → Only structural relaxation happens during annealing at the temperature below T g . → Nanocrystallization happens during annealing at the temperature above T g . → The compressive strength increases with annealing time up to 20 min. → The compressive strength decreases with annealing time after 20 min. - Abstract: The effects of isothermal annealing on the microstructures and compressive strength of a Zr 56 Al 10.9 Ni 4.6 Cu 27.8 Nb 0.7 bulk metallic glass (BMG) have been studied using X-ray diffraction, scanning electron microscopy and compression tests. It has been shown that only structural relaxation happens during annealing at the temperature below T g (glass transition temperature), while both structural relaxation and nanocrystallization happen during annealing at the temperature above T g . Compression tests indicated that the strength of the BMG increases with annealing time at 437 deg. C up to 20 min, after which the strength starts to decrease. The strength evolution of the BMG with the annealing time is due to combined effects of the variations of the free volume and nanocrystals.

  18. Effects of surface polishing and annealing on the optical conductivity of intermetallic compounds

    International Nuclear Information System (INIS)

    Rhee, Joo Yull

    1999-01-01

    The optical conductivity spectra of several intermetallic compounds were measured by spectroscopic ellipsometry. Three spectra were measured for each compound; just after the sample was mechanically polished, at high temperature, and after the sample was annealed at 110 .deg. C for at least one day and cooled to room temperature. An equiatomic FeTi alloy showed the typical effects of annealing after mechanical polishing of surface. The spectrum after annealing had a larger magnitude and sharper structures than the spectrum before annealing. We also observed shifts of peaks in the spectrum. A relatively low-temperature annealing gave rise to unexpectedly substantial effects, and the effects were explained by recrystallization and/or a disorder → order transition of the surface of the sample which was damaged and, hence, became highly disordered by mechanical polishing. Similar effects were also observed when the sample temperature was lowered. The observed changes upon annealing could partly be explained by presumption that the recrystallization would be realized in such a way that the average atomic spacing would be reduced

  19. High-Temperature-Short-Time Annealing Process for High-Performance Large-Area Perovskite Solar Cells.

    Science.gov (United States)

    Kim, Minjin; Kim, Gi-Hwan; Oh, Kyoung Suk; Jo, Yimhyun; Yoon, Hyun; Kim, Ka-Hyun; Lee, Heon; Kim, Jin Young; Kim, Dong Suk

    2017-06-27

    Organic-inorganic hybrid metal halide perovskite solar cells (PSCs) are attracting tremendous research interest due to their high solar-to-electric power conversion efficiency with a high possibility of cost-effective fabrication and certified power conversion efficiency now exceeding 22%. Although many effective methods for their application have been developed over the past decade, their practical transition to large-size devices has been restricted by difficulties in achieving high performance. Here we report on the development of a simple and cost-effective production method with high-temperature and short-time annealing processing to obtain uniform, smooth, and large-size grain domains of perovskite films over large areas. With high-temperature short-time annealing at 400 °C for 4 s, the perovskite film with an average domain size of 1 μm was obtained, which resulted in fast solvent evaporation. Solar cells fabricated using this processing technique had a maximum power conversion efficiency exceeding 20% over a 0.1 cm 2 active area and 18% over a 1 cm 2 active area. We believe our approach will enable the realization of highly efficient large-area PCSs for practical development with a very simple and short-time procedure. This simple method should lead the field toward the fabrication of uniform large-scale perovskite films, which are necessary for the production of high-efficiency solar cells that may also be applicable to several other material systems for more widespread practical deployment.

  20. Optical annealing of CaF2:Mn for cooled optically stimulated luminescence

    International Nuclear Information System (INIS)

    Miller, S.D.; Stahl, K.A.; Endres, G.W.R.; McDonald, J.C.

    1989-01-01

    Optical annealing of the cooled optically stimulated luminescence in CaF 2 :Mn at room temperature has been demonstrated. The laser of choice for optical annealing of CaF 2 : Mn is a 326 nm helium-cadmium ultraviolet laser. A complete cycle of readout and annealing of the CaF 2 :Mn cooled optically stimulated dosemeters can now be accomplished without heating the dosemeters above room temperature. This annealing work represents the next step toward creating a proton-recoil-based fast neutron dosimetry system based on the cooled optically stimulated luminescence technique. (author)

  1. Effects of oxygen partial pressure and annealing temperature on the residual stress of hafnium oxide thin-films on silicon using synchrotron-based grazing incidence X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Biswas, Debaleen [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Sinha, Anil Kumar [ISU, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Homi Bhabha National Institute, BARC, Mumbai 400 094 (India); Chakraborty, Supratic, E-mail: supratic.chakraborty@saha.ac.in [Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India)

    2016-10-30

    Highlights: • Residual stress estimation thin hafnium oxide film with thickness of <10 nm. • A mathematical expression is proposed for stress estimation of thin-film using GIXRD. • Residual stress varies with argon content in Ar/O{sub 2} plasma and annealing temperature. • Variation of stress is explained by IL swelling and enhanced structural relaxation. - Abstract: Synchrotron radiation-based grazing incidence X-ray diffraction (GI-XRD) technique is employed here to estimate the residual stress of < 10 nm thin hafnium oxide film deposited on Si (100) substrate at different argon/oxygen ratios using reactive rf sputtering. A decrease in residual stress, tensile in nature, is observed at higher annealing temperature for the samples deposited with increasing argon ratio in the Ar/O{sub 2} plasma. The residual stress of the films deposited at higher p{sub Ar} (Ar:O{sub 2} = 4:1) is also found to be decreased with increasing annealing temperature. But the stress is more or less constant with annealing temperature for the films deposited at lower Ar/O{sub 2} (1:4) ratio. All the above phenomena can be explained on the basis of swelling of the interfacial layer and enhanced structural relaxation in the presence of excess Hf in hafnium oxide film during deposition.

  2. Annealing experiments on and high-temperature behavior of the superconductor yttrium barium copper oxide (YBa2Cu3Ox)

    NARCIS (Netherlands)

    Brabers, V.A.M.; Jonge, de W.J.M.; Bosch, L.A.; Steen, van der C.; de Groote, A.M.W.; Verheyen, A.A.; Vennix, C.W.H.M.

    1988-01-01

    The high temperature behaviour (300–1100 K) of the superconductor YBa2Cu3Ox has been studied by annealing experiments, thermal dilatation, thermogravimetry and measurements of the electrical resistance and thermoelectric power. For the fast oxidation process of this compound, reaction enthalpies

  3. Effects of pre-irradiation annealing at high temperature on optical absorption and electron paramagnetic resonance of natural pumpellyite mineral

    Energy Technology Data Exchange (ETDEWEB)

    Javier-Ccallata, Henry, E-mail: henrysjc@gmail.com [Escuela de Ingeniería Electrónica y Telecomunicaciones, Universidad Alas Peruanas Filial Arequipa, Urb. D. A. Carrión G-14, J. L. Bustamante y Rivero, Arequipa (Peru); Laboratório de Sistemas Nanoestruturados, Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis, Santa Catarina (Brazil); Filho, Luiz Tomaz [Departamento de Física Nuclear, Instituto de Física, Universidade de São Paulo, Rua do Matão, travessa R, 187, CEP 05508-900 São Paulo, SP (Brazil); Faculdade de Tecnologia e Ciências Exatas, Universidade São Judas Tadeu, Rua Taquari 546, São Paulo, SP (Brazil); Sartorelli, Maria L. [Laboratório de Sistemas Nanoestruturados, Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis, Santa Catarina (Brazil); Watanabe, Shigueo [Departamento de Física Nuclear, Instituto de Física, Universidade de São Paulo, Rua do Matão, travessa R, 187, CEP 05508-900 São Paulo, SP (Brazil)

    2013-09-15

    Highlights: •Natural pumpellyite mineral presents superposition bands around 900 and 1060 nm due Fe{sup 2+}and Fe{sup 3+}. •High temperature annealing influences the EPR and OA spectra. •The behavior of EPR line for 800 and 900 °C can be attributed to forbidden dd transitions due the Fe{sup 3+}. -- Abstract: Natural silicate mineral of pumpellyite, Ca{sub 2}MgAl{sub 2}(SiO{sub 4})(Si{sub 2}O{sub 7})(OH){sub 2}·(H{sub 2}O), point group A2/m, has been studied concerning high temperature annealing and γ-radiation effects on Optical Absorption (OA) and Electron Paramagnetic Resonance (EPR) properties. Chemical analysis revealed that besides Si, Al, Ca and Mg, other oxides i.e., Fe, Mn, Na, K, Ti and P are present in the structure as impurities. OA measurements of natural and annealed pumpellyite revealed several bands in the visible region due to spin forbidden transitions of Fe{sup 2+} and Fe{sup 3+}. The behaviour of bands around 900 and 1060 nm, with pre-annealing and γ radiation dose, indicating a transition Fe{sup 2+} → e{sup −} + Fe{sup 3+}. On the other hand, EPR measurements reveal six lines of Mn{sup 2+}, and satellites due to hyperfine interaction, superimposed on the signal of Fe{sup 3+} around of g = 2. For heat treatment from 800 °C the signal grows significantly and for 900 °C a strong signal of Fe{sup 3+} hides all Mn{sup 2+} lines. The strong growth of this signal indicates that the transitions are due to Fe{sup 3+} dipole–dipole interactions.

  4. Influence of initial annealing on structure evolution and magnetic properties of 3.4% Si non-oriented steel during final annealing

    Energy Technology Data Exchange (ETDEWEB)

    Simões Mendanha Pedrosa, Josiane [Department of Physics, Federal University of Ouro Preto, Ouro Preto MG-3540000 (Brazil); Costa Paolinelli, Sebastião da [Research Department Aperam South America, Praça Primeiro de Maio, 9, Timóteo MG-35180018 (Brazil); Barros Cota, André, E-mail: abcota@ufop.br [Department of Physics, Federal University of Ouro Preto, Ouro Preto MG-3540000 (Brazil)

    2015-11-01

    The effect of the initial annealing on structure evolution and magnetic properties during the final annealing of a 3.4% Si non-oriented grain steel was evaluated. Half of the samples were submitted to initial annealing at 1030 °C before cold rolling and all samples were subjected to final annealing process at temperatures from 540 °C to 1100 °C. The magnetic induction and core loss in the final samples, the microstructure by optical microscopy and the crystallographic texture by X-ray diffraction and EBSD were evaluated. The results show that the samples without initial annealing presented better magnetic properties than the samples with initial annealing, due to the higher ratio between Eta fiber and Gamma fiber volume fractions (Eta/Gamma ratio) in their structure after final annealing. - Highlights: • Texture and magnetic properties of 3.4% Si non-oriented electrical steel were measured. • Without initial annealing, better texture and magnetic properties were obtained. • Good texture and magnetic properties are obtained with Steckel hot band structure.

  5. Formability of Annealed Ni-Ti Shape Memory Alloy Sheet

    Science.gov (United States)

    Fann, K. J.; Su, J. Y.; Chang, C. H.

    2018-03-01

    Ni-Ti shape memory alloy has two specific properties, superelasiticity and shape memory effect, and thus is widely applied in diverse industries. To extend its application, this study attempts to investigate the strength and cold formability of its sheet blank, which is annealed at various temperatures, by hardness test and by Erichsen-like cupping test. As a result, the higher the annealing temperature, the lower the hardness, the lower the maximum punch load as the sheet blank fractured, and the lower the Erichsen-like index or the lower the formability. In general, the Ni-Ti sheet after annealing has an Erichsen-like index between 8 mm and 9 mm. This study has also confirmed via DSC that the Ni-Ti shape memory alloy possesses the austenitic phase and shows the superelasticity at room temperature.

  6. Superheated steam annealing of pressurized water reactor vessel

    International Nuclear Information System (INIS)

    Porowski, J.S.

    1993-01-01

    Thermal annealing of an embrittled Reactor Pressure Shell is the only recognized means for recovering material properties lost due to long-term exposure of the reactor walls to radiation. Reduced toughness of the material during operation is a major concern in evaluations of structural integrity of older reactors. Extensive studies performed within programs related to life extension of nuclear plants have confirmed that the thermal treatment of 850 deg. F for 168 hours on irradiated material essentially recovers material properties lost due to neutron exposure. Dry and wet annealing methods have been considered. Wet annealing involves operating the reactor at near design temperatures and pressures. Since the temperature of wet annealing must be limited to vessel design temperature of 650 deg. F, only partial recovery of the lost properties is achieved. Thus dry annealing was selected as an alternative for future development and industrial implementation to extend the safe life of reactors. Dry thermal annealing consists of heating portions of the reactor vessel at a specific temperature for a given period of time using a high temperature heat source. The use of spent fuel assemblies, induction heating and resistance heating elements as well as the circulation of heated fluid were investigated as potential candidate methods. To date the use of resistance heating elements which are lowered into a dry empty reactor was considered to be the preferred method. In-depth research in the United States and practical applications of such a method in Russia have confirmed feasibility of the method. The method of using circulating superheated steam to anneal the vessel at 850 deg. F without complete removal of the reactor internals is described herein. After removing the reactor head and fuel, the core barrel along with the upper and lower core in PWRs is lifted to open an annular space between the reactor shell flange and the core barrel flange. The thermal shield can remain

  7. Structural and photoluminescence properties of ZrO2:Eu3+ SiO2 nanophosphors as a function of annealing temperature

    International Nuclear Information System (INIS)

    Parma, Alvise; Freris, Isidora; Riello, Pietro; Enrichi, Francesco; Cristofori, Davide; Benedetti, Alvise

    2010-01-01

    The synthesis, morphology and luminescence properties of two systems comprising luminescent Eu 3+ -doped zirconium oxide nanocrystals embedded in an amorphous silica matrix are reported. The two systems, prepared with the same overall wt% composition of silica (75%) and Eu x Zr (1-x) O (2-x/2) solid solution (25%), have been annealed in the range 135-1000 o C and subsequently functionalized with (3-aminopropyl)triethoxysilane. Detailed X-ray diffraction analyses and transmission electron micrographs, combined with infrared spectroscopy and luminescence spectroscopy data, have been used to demonstrate the influence of annealing temperature on the: (i) nanostructure, (ii) luminescence properties and (iii) availability of superficial -OH groups for efficient surface functionalization. The optimum calcination temperature was found to be 700 o C for each series in terms of luminescence lifetime efficiency and post-functionalization efficiency with (3-aminopropyl)triethoxysilane.

  8. Mechanical behavior of multipass welded joint during stress relief annealing

    International Nuclear Information System (INIS)

    Ueda, Yukio; Fukuda, Keiji; Nakacho, Keiji; Takahashi, Eiji; Sakamoto, Koichi.

    1978-01-01

    An investigation into mechanical behavior of a multipass welded joint of a pressure vessel during stress relief annealing was conducted. The study was performed theoretically and experimentally on idealized research models. In the theoretical analysis, the thermal elastic-plastic creep theory developed by the authors was applied. The behavior of multipass welded joints during the entire thermal cycle, from welding to stress relief annealing, was consistently analyzed by this theory. The results of the analysis show a good, fundamentally coincidence with the experimental findings. The outline of the results and conclusions is as follows. (1) In the case of the material (2 1/4Cr-1Mo steel) furnished in this study, the creep strain rate during stress relief annealing below 575 0 C obeys the strain-hardening creep law using the transient creep and the one above 575 0 C obeys the power creep law using the stational creep. (2) In the transverse residual stress (σsub(x)) distribution after annealing, the location of the largest tensile stress on the top surface is about 15 mm away from the toe of weld, and the largest at the cross section is just below the finishing bead. These features are similar to those of welding residual stresses. But the stress distribution after annealing is smoother than one from welding. (3) The effectiveness of stress relief annealing depends greatly on the annealing temperature. For example, most of residual stresses are relieved at the heating stage with a heating rate of 30 0 C/hr. to 100 0 C/hr. if the annealing temperature is 650 0 C, but if the annealing temperature is 550 0 C, the annealing is not effective even with a longer holding time. (4) In the case of multipass welding residual stresses studied in this paper, the behaviors of high stresses during annealing are approximated by ones during anisothermal relaxation. (auth.)

  9. The role of annealing: effect on CaSO4:Dy phosphor with manganese and sodium impurities

    International Nuclear Information System (INIS)

    Li, S.-H.; Hsu, P.-C.

    1990-01-01

    The effect of the annealing treatment on the CaSO 4 :Dy phosphor with Mn and Na impurities was studied at different annealing temperatures from 100 0 C to 800 0 C. Doping with or without impurity caused no difference in the properties for temperatures less than 400 0 C. An annealing temperature greater than 400 0 C brings a reduction in low temperature peak intensities of CaSO 4 :Dy with Na only. The high temperature peak intensities increase as the temperature increases from 400 0 C to 600 0 C. However, annealing at a temperature greater than 600 0 C brings a drastic reduction in high temperature peak intensities as well as TL output. (author)

  10. Effects of high-temperature thermal annealing on the electronic properties of In-Ga-Zn oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Li, Qin; Song, Zhong Xiao; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com; Li, Yan Huai, E-mail: mafei@mail.xjtu.edu.cn, E-mail: liyhemail@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Xu, Ke Wei [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xi' an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi' an University of Arts and Science, Xi' an, Shaanxi 710065 (China)

    2015-03-15

    Indium gallium zinc oxide (IGZO) thin films were deposited by radio-frequency magnetron sputtering at room-temperature. Then, thermal annealing was conducted to improve the structural ordering. X-ray diffraction and high-resolution transmission electron microscopy demonstrated that the as-deposited IGZO thin films were amorphous and crystallization occurred at 800 and 950 °C. As a result of crystallization at high temperature, the carrier concentration and the Hall mobility of IGZO thin films were sharply increased, which could be ascribed to the increased oxygen vacancies and improved structural ordering of the thin films.

  11. Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO as a pH sensitive layer for applications in field effect based sensors

    Directory of Open Access Journals (Sweden)

    Narendra Kumar

    2015-06-01

    Full Text Available The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO2/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 oC in N2 ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 oC. The increased pH sensitivity with the film annealed at 400 oC in N2 gas was attributed to the enhanced lattice oxygen ions (based on the XPS data and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 oC was attributed to defects in the films as well as the induced traps at the IGZO/SiO2 interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here used as the active layer in a thin film transistors (TFTs possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.

  12. Influence of oxygen on the annealing of radioactive defects in germanium

    International Nuclear Information System (INIS)

    Gasimov, G.M.; Mustafayev, Yn.M.; Gasimova, V.G.

    2002-01-01

    The isochronal annealing were carried out in the wide temperature range, for the establishment of oxygen influence on the annealing of radioactive defects (Rd) in any radiated germanium samples, concentrated with oxygen up to concentration of 9.7·10 16 cm -3 . It is shown that the curves of isochronal annealing of one of the such samples 1, with primary current charge concentration of 9.0·10 cm 14 , radiated by integral electron flow of φ= 8.0·10 16 cm -3 , at 293 K and also the non-oxygen samples 2, with primary concentration of 1.7·10 cm -3 , radiated at above mentioned conditions. The sample 1 is converted by radiation to p-type, but the conversion not occur in samples 2. It is illustrated, that that there is two annealing stage at 340-430 K, for the samples 2, which in results takes place the complete annealing of the RD. At 300 K the annealing takes place in samples of 1, but at 340 K - the reverse annealing of RD. The sample was at compensated state in the temperature range of 360-400 K. An annealing of RD takes place again at 440 K and the sample re-converted its conductivity type. The reverse annealing at 480 K, and at about 510 K, the substantial annealing of the defects has been observed, which in results a sample restores it's primary parameters. The carried out experiments show that as in converted, and also in n-type be samples, Is observed the reverse annealing of RD, but the reverse annealing of current charge carriers in n-type samples is observed only at such conditions, of the integral flow of accelerated elections exceeds the primary concentration of current charge carriers about 4 time of magnitude (φ≥4n 0 ). Besides, the complete annealing of RD in germanium samples concentrated with oxygen, takes place at more high temperatures in comparison with the non-oxygen samples

  13. Study of photoluminescence from annealed bulk-ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yoneta, M.; Ohishi, M.; Saito, H. [Department of Applied Physics, Okayama University of Science, 1-1 Ridai-cho, Okayama 700-0005 (Japan); Yoshino, K. [Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192 (Japan); Honda, M. [Faculty of Science, Naruto University of Education, 748 Nakajima, Takashima, Naruto-cho, Naruto-shi 772-8502 (Japan)

    2006-03-15

    We have investigated the influence of rapid thermal annealing on the photoluminescence of bulk-ZnO single crystal. As-grown ZnO wafer, illuminated by 325 nm ultraviolet light at 4.2 K, emitted the visible luminescence of pale green centered of 2.29 eV. The luminescence was observed by the anneal at the temperature range between 400 C and 1000 C, however, its intensity decreased with anneal temperature. The free-exciton and the 2.18 eV emission line were obtained by the anneal at 1200 C for 60 sec. From the X-ray diffraction and the surface morphology measurements, the improvement of the crystallinity of bulk-ZnO crystal were confirmed. We suggest that a rapid thermal annealing technique is convenience to improve the the quality of bul-ZnO single crystals. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Effect of annealing temperature on the electrical transport properties of CaRuO3-δ thin films directly deposited on the Si substrate

    International Nuclear Information System (INIS)

    Paik, Hanjong; Kim, Youngha; No, Kwangsoo; Cann, David P.; Yoon, DongJoo; Kim, ByungIl; Kim, Yangsoo

    2007-01-01

    We investigate the effect of annealing temperature on the preferentially (110)-oriented CaRuO 3-δ (CRO) thin films directly prepared on Si(100) substrate by rf magnetron sputtering. Crystalline quality and electrical transport properties of the CRO thin films were modified by post-annealing treatment. It was obvious that 700 C post-annealing brought about excellent metallic characteristics with the elevation of carrier concentration and mobility. From this result, we suggested that enhanced (110) orientation, and the ratio of chemical composition Ru 4+ /Ca 2+ ion were responsible for the transport properties of CRO thin film. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Effect of the post-annealing temperature on the thermal-decomposed NiOx hole contact layer for perovskite solar cells

    Directory of Open Access Journals (Sweden)

    Yuxiao Guo

    2018-02-01

    Full Text Available A hysteresis-less inverted perovskite solar cell (PSC with power conversion efficiency (PCE of 13.57% was successfully achieved based on the thermal-decomposed NiOx hole contact layer, possessing better electron blocking and hole extraction properties for its suitable work function and high-conduction band edge position. Herein, the transparent and high-crystalline NiOx film is prepared by thermal-decomposing of the solution-derived Ni(OH2 film in our study, which is then employed as hole transport layer (HTL of the organic–inorganic hybrid PSCs. Reasonably, the post-annealing treatment, especially for the annealing temperature, could greatly affect the Ni(OH2 decomposition process and the quality of decomposed NiOx nanoparticles. The vital NiOx HTLs with discrepant morphology, crystallinity and transmission certainly lead to a wide range of device performance. As a result, an annealing process of 400∘C/2h significantly promotes the photovoltaic properties of the NiOx layer and the further device performance.

  16. Annealing-induced Fe oxide nanostructures on GaAs

    OpenAIRE

    Lu, Y X; Ahmad, E; Xu, Y B; Thompson, S M

    2005-01-01

    We report the evolution of Fe oxide nanostructures on GaAs(100) upon pre- and post-growth annealing conditions. GaAs nanoscale pyramids were formed on the GaAs surface due to wet etching and thermal annealing. An 8.0-nm epitaxial Fe film was grown, oxidized, and annealed using a gradient temperature method. During the process the nanostripes were formed, and the evolution has been demonstrated using transmission and reflection high energy electron diffraction, and scanning electron microscopy...

  17. Dependence of the annealing kinetics of A centers and divacancies on temperature, particle energy, and irradiation dose for n-Si crystals

    International Nuclear Information System (INIS)

    Pagava, T.A.

    2002-01-01

    n-Si crystals grown by the float-zone method with a phosphorus concentration of ∼6 x 10 13 cm -3 and irradiated with 2-MeV electrons and 25-MeV protons were studied. It is shown that the kinetics of the isochronous annealing of the A centers and divacancies (the annealing temperature and the rearrangement of radiation defects in the situation where the dissociation of one type of defects gives rise to more stable defects) depends in a complicated way on the energy, dose, and temperature of irradiation; i.e., this kinetics depends on the relation between the concentrations of various radiation defects and on the charge state of reacting primary radiation defects when they interact with each other, with impurity atoms, and with disordered regions. An increase in the concentration of divacancies in the temperature range of 180-210 deg. C is attributed to the dissociation of disordered regions

  18. Effects of methane annealing ambience on the structure and photoluminescence of BCNO phosphors

    International Nuclear Information System (INIS)

    Lu, Fang; Zhang, Xinghua; Lu, Zunming; Tang, Chengchun

    2014-01-01

    Green-emitting BCNO phosphors are synthetized by low temperature liquid method. And then the properties of structure and photoluminescence of BCNO phosphors annealed under methane ambience at 500–700 °C for 4 h and at 600 °C for 3–6 h are researched. When the phosphor was annealed for the same time period, the crystallinity was improved first and then became poor as the annealing temperature increased. In addition, the emission peak shifted to high wavelength, and the maximum shift span reached up to 40 nm. When the phosphor was annealed at the same temperature, the crystallinity was improved and the emission peak was red-shifted. The multi-peaks fitting results indicated that three luminescence mechanisms which were C-related defect, B–O luminescence center and other defects or vacancies played important roles in BCNO phosphors. - Highlights: • When the annealing time period was fixed to 4 h, the XRD results showed the crystallinity was improved at first and then became poor as the annealing temperature increased. Furthermore, the PL results indicated the emission peak was red-shifted and then blue-shifted and the maximum shift span reached up to 40 nm when the annealing temperature was 600 °C. • With regard to the samples annealed at 600 °C for 3, 4, 5 and 6 h respectively, the crystallinity was improved as the annealing time period prolonged. In addition, the emission peak was red-shifted first and then blue-shifted and the maximum shift span reached up to 40 nm when the annealing time was 4 h. • What's more, the three-peaks fitting graphs uncovered that the luminescence properties were decided by three mechanisms which were C-related defect, B–O luminescence center and other defects or vacancies. Therefore, the peakshift and luminescence intensity were influenced by the comprehensive superposition of these three factors. • In this work, we found the inter luminescence mechanisms of BCNO phosphor by the annealing experiments under methane

  19. Low-temperature electron properties of Heusler alloys Fe2VAl and Fe2CrAl: Effect of annealing

    International Nuclear Information System (INIS)

    Podgornykh, S. M.; Svyazhin, A. D.; Shreder, E. I.; Marchenkov, V. V.; Dyakina, V. P.

    2007-01-01

    We present the results of measurements of low-temperature heat capacity, as well as electrical and magnetic properties of Heusler alloys Fe 2 VAl and Fe 2 CrAl prepared in different ways using various heat treatment regimes. The density of states at the Fermi level is estimated. A contribution of ferromagnetic clusters in the low-temperature heat capacity of the Fe 2 VAl alloy is detected. The change in the number and volume of clusters as a result of annealing of an alloy affects the behavior of their low-temperature heat capacity, resistivity, and magnetic properties

  20. Damage and in-situ annealing during ion implantation

    International Nuclear Information System (INIS)

    Sadana, D.K.; Washburn, J.; Byrne, P.F.; Cheung, N.W.

    1982-11-01

    Formation of amorphous (α) layers in Si during ion implantation in the energy range 100 keV-11 MeV and temperature range liquid nitrogen (LN)-100 0 C has been investigated. Cross-sectional transmission electron microscopy (XTEM) shows that buried amorphous layers can be created for both room temperature (RT) and LN temperature implants, with a wider 100 percent amorphous region for the LN cooled case. The relative narrowing of the α layer during RT implantation is attributed to in-situ annealing. Implantation to the same fluence at temperatures above 100 0 C does not produce α layers. To further investigate in situ annealing effects, specimens already containing buried α layers were further irradiated with ion beams in the temperature range RT-400 0 C. It was found that isolated small α zones (less than or equal to 50 diameter) embedded in the crystalline matrix near the two α/c interfaces dissolved into the crystal but the thickness of the 100 percent α layer was not appreciably affected by further implantation at 200 0 C. A model for in situ annealing during implantation is presented

  1. Thermal annealing of gamma irradiated ammonium chloride (Preprint no. RC-37)

    International Nuclear Information System (INIS)

    Kalkar, C.D.; Lala, Neeta

    1991-01-01

    Ammonium chloride produces N 2 H 4 + and Cl 2 as the main radiolytic products on gamma irradiation. Thermal annealing has a marked effect on the stability of N 2 H 4 + and Cl 2 . During the thermal annealing the chemical yield of nitrite and iodine was studied by dissolving irradiated ammonium chloride in aqueous sodium nitrate and potassium iodide respectively. The yield of iodine in isochronal annealing showed an exponential behaviour with temperature while that of nitrite showed a decrease and then increases at higher temperatures. The results are explained on the basis of dissociation and recombination of N 2 H 4 + with temperature. (author). 3 refs., 2 figs

  2. Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing

    International Nuclear Information System (INIS)

    Liu, Bingbing; Qin, Fuwen; Wang, Dejun

    2015-01-01

    Highlights: • Low-temperature ECR microwave hydrogen plasma were pretreated for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces. • The relationship among Ohmic properties, the SiC surface properties and TiC/SiC interface properties were established. • Interface band structures were analyzed to elucidate the mechanism by which the Ohmic contacts were formed. - Abstract: We proposed an electronic cyclotron resonance (ECR) microwave hydrogen plasma pretreatment (HPT) for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces and formed ideal TiC/SiC Ohmic contacts with significantly low contact resistivity (1.5 × 10"−"5 Ω cm"2) after low-temperature annealing (600 °C). This is achieved by reducing barrier height at TiC/SiC interface because of the release of pinned Fermi level by surface flattening and SiC surface states reduction after HPT, as well as the generation of donor-type carbon vacancies, which reduced the depletion-layer width for electron tunneling after annealing. Interface band structures were analyzed to elucidate the mechanism of Ohmic contact formations.

  3. Comparative studies of laser annealing technique and furnace annealing by X-ray diffraction and Raman analysis of lithium manganese oxide thin films for lithium-ion batteries

    International Nuclear Information System (INIS)

    Pröll, J.; Weidler, P.G.; Kohler, R.; Mangang, A.; Heißler, S.; Seifert, H.J.; Pfleging, W.

    2013-01-01

    The structure and phase formations of radio frequency magnetron sputtered lithium manganese oxide thin films (Li 1.1 Mn 1.9 O 4 ) under ambient air were studied. The influence of laser annealing and furnace annealing, respectively, on the bulk structure and surface phases was compared by using ex-situ X-ray diffraction and Raman analysis. Laser annealing technique formed a dominant (440)-reflection, furnace annealing led to both, (111)- and (440)-reflections within a cubic symmetry (S.G. Fd3m (227)). Additionally, in-situ Raman and in-situ X-ray diffraction were applied for online detection of phase transformation temperatures. In-situ X-ray diffraction measurements clearly identified the starting temperature for the (111)- and (440)-reflections around 525 °C and 400 °C, respectively. The 2θ Bragg peak positions of the characteristic (111)- and (440)-reflections were in good agreement with those obtained through conventional furnace annealing. Laser annealing of lithium manganese oxide films provided a quick and efficient technique and delivered a dominant (440)-reflection which showed the expected electrochemical behavior of the well-known two-step de-/intercalation process of lithium-ions into the cubic spinel structure within galvanostatic testing and cyclic voltammetry. - Highlights: ► Formation of cubic spinel-like phase of Li–Mn–O thin films by rapid laser annealing ► Laser annealing at 680 °C and 100 s was demonstrated as quick crystallization method. ► 400 °C was identified as characteristic onset temperature for (440)-reflex formation

  4. Photo annealing effect on p-doped inverted organic solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Lafalce, Evan; Toglia, Patrick; Lewis, Jason E.; Jiang, Xiaomei, E-mail: xjiang@usf.edu [Department of Physics, University of South Florida, Tampa, Florida 33620 (United States)

    2014-06-28

    We report the transient positive photo annealing effect in which over 600% boost of power conversion efficiency was observed in inverted organic photovoltaic devices (OPV) made from P3HT/PCBM by spray method, after 2 hrs of constant solar AM 1.5 irradiation at low temperature. This is opposite to usual photodegradation of OPV, and cannot be explained by thermal activation alone since the mere temperature effect could only account for 30% of the enhancement. We have investigated the temperature dependence, cell geometry, oxygen influence, and conclude that, for p-doped active layer at room temperature, the predominant mechanism is photo-desorption of O{sub 2}, which eliminates electron traps and reduces space charge screening. As temperature decreases, thermal activation and deep trap-state filling start to show noticeable effect on the enhancement of photocurrent at intermediate low temperature (T = 125 K). At very low temperature, the dominant mechanism for photo annealing is trap-filling, which significantly reduces recombination between free and trapped carriers. At all temperature, photo annealing effect depends on illumination direction from cathode or anode. We also explained the large fluctuation of photocurrent by the capture/reemit of trapped electrons from shallow electron traps of O{sub 2}{sup -} generated by photo-doping. Our study has demonstrated the dynamic process of photo-doping and photo-desorption, and shown that photo annealing in vacuum can be an efficient method to improve OPV device efficiency.

  5. Effect of annealing on structural, optical and electrical properties of SILAR synthesized CuO thin film

    Science.gov (United States)

    Das, M. R.; Mukherjee, A.; Mitra, P.

    2017-05-01

    Nano crystalline CuO thin films were synthesize on glass substrate using SILAR technique. The structural, optical and electrical properties of the films were carried out for as deposited as well as for films post annealed in the temperature range 300 - 500° C. The X-ray diffraction pattern shows all the films are polycrystalline in nature with monoclinic phase. The crystallite size increase and lattice strain decreases with increase of annealing temperature indicating high quality of the films for annealed films. The value of band gap decreases with increases of annealing temperature of the film. The effect of annealing temperature on ionic conductivity and activation energy to electrical conduction process are discussed.

  6. Effects of Annealing Temperature on Structure and Magnetic Properties of TbxY3−xFe5O12 (x=0.2 and 0.4 Thin Films

    Directory of Open Access Journals (Sweden)

    N. B. Ibrahim

    2012-01-01

    Full Text Available Terbium-substituted yttrium iron garnet (TbxY3−xFe5O12 (x=0.2 and 0.4 thin films have been successfully prepared by a sol-gel method followed by spin-coating process. The annealing of the films was performed at different temperatures like 700, 800, and 900°C and found that the films annealed at 900°C turned out to be crystallized into a pure garnet phase. All of the films were bearing grains of nanometer in size. Increasing the annealing temperature gave extra energy to the grains causing to be agglomerates. The lattice contraction occurred as the grain’s sizes were decreased due to the decrease of Fe2+ formation. The magnetic measurements show that all of the films are soft magnetic materials with low saturation magnetization values. The hysteresis loops of the films which were annealed at 900°C were found angular in shape similar to the single crystal-like YIG film.

  7. Annealing of ion implanted silicon

    International Nuclear Information System (INIS)

    Chivers, D.; Smith, B.J.; Stephen, J.; Fisher, M.

    1980-09-01

    The newer uses of ion implantation require a higher dose rate. This has led to the introduction of high beam current implanters; the wafers move in front of a stationary beam to give a scanning effect. This can lead to non-uniform heating of the wafer. Variations in the sheet resistance of the layers can be very non-uniform following thermal annealing. Non-uniformity in the effective doping both over a single wafer and from one wafer to another, can affect the usefulness of ion implantation in high dose rate applications. Experiments to determine the extent of non-uniformity in sheet resistance, and to see if it is correlated to the annealing scheme have been carried out. Details of the implantation parameters are given. It was found that best results were obtained when layers were annealed at the maximum possible temperature. For arsenic, phosphorus and antimony layers, improvements were observed up to 1200 0 C and boron up to 950 0 C. Usually, it is best to heat the layer directly to the maximum temperature to produce the most uniform layer; with phosphorus layers however it is better to pre-heat to 1050 0 C. (U.K.)

  8. Effect of Channel Thickness, Annealing Temperature and Channel Length on Nanoscale Ga2O3-In2O3-ZnO Thin Film Transistor Performance.

    Science.gov (United States)

    Kumaresan, Yogeenth; Pak, Yusin; Lim, Namsoo; Lee, Ryeri; Song, Hui; Kim, Tae Heon; Choi, Boran; Jung, Gun Young

    2016-06-01

    We demonstrated the effect of active layer (channel) thickness and annealing temperature on the electrical performances of Ga2O3-In2O3-ZnO (GIZO) thin film transistor (TFT) having nanoscale channel width (W/L: 500 nm/100 μm). We found that the electron carrier concentration of the channel was decreased significantly with increasing the annealing temperature (100 degrees C to 300 degrees C). Accordingly, the threshold voltage (V(T)) was shifted towards positive voltage (-12.2 V to 10.8 V). In case of channel thickness, the V(T) was shifted towards negative voltage with increasing the channel thickness. The device with channel thickness of 90 nm annealed at 200 degrees C revealed the best device performances in terms of mobility (10.86 cm2/Vs) and V(T) (0.8 V). The effect of channel length was also studied, in which the channel width, thickness and annealing temperature were kept constant such as 500 nm, 90 nm and 200 degrees C, respectively. The channel length influenced the on-current level significantly with small variation of V(T), resulting in lower value of on/off current ratio with increasing the channel length. The device with channel length of 0.5 μm showed enhanced on/off current ratio of 10(6) with minimum V(T) of 0.26 V.

  9. Effect of annealing temperature on the PEC performance of electrodeposited copper oxides

    Science.gov (United States)

    Marathey, Priyanka; Pati, Ranjan; Mukhopadhyay, Indrajit; Ray, Abhijit

    2018-05-01

    In this work, we have deposited Cu2O film on fluorine doped tin oxide (FTO) substrate by electrodeposition. Pure CuO phase has been obtained by annealing the electrodeposited Cu2O film at optimized temperature (500°C) for two hours in air. Copper(I) oxide films showed good photo response with a current density of 0.54mA/cm2 at 0 V vs RHE. It is evident from UV-Visible spectroscopic analysis that the bandgap of Cu(I) and Cu(II) oxides differs from each other resulting in significant change in photo current for these two phases, observed in the PEC study. However CuO film showed better stability as compared to Cu2O film.

  10. The annealing effects on irradiated SiC piezo resistive pressure sensor

    International Nuclear Information System (INIS)

    Almaz, E.; Blue, T. E.; Zhang, P.

    2009-01-01

    The effects of temperature on annealing of Silicon Carbide (SiC) piezo resistive pressure sensor which was broken after high fluence neutron irradiation, were investigated. Previously, SiC piezo resistive sensor irradiated with gamma ray and fast neutron in the Co-60 gamma-ray irradiator and Beam Port 1 (BP1) and Auxiliary Irradiation Facility (AIF) at the Ohio State University Nuclear Reactor Laboratory (OSUNRL) respectively. The Annealing temperatures were tested up to 400 C. The Pressure-Output voltage results showed recovery after annealing process on SiC piezo resistive pressure sensor. The bridge resistances of the SiC pressure sensor stayed at the same level up to 300 C. After 400 C annealing, the resistance values changed dramatically.

  11. Structure evolution and magnetic properties of annealed nanoscale Gd/Ti multilayers

    Directory of Open Access Journals (Sweden)

    Larrañaga A.

    2013-01-01

    Full Text Available The structure and magnetic properties were comparatively analyzed for [Gd/Ti]n multilayers with Gd layer thickness of 1.5 to 12 nm. Multilayers were deposited by sputtering technique at room temperature and annealed for the temperatures up to 400 ºC. It was observed that the samples are highly textured in a different way depending on the Gd layer thickness and annealing temperature. It was found that the heat treatment practically does not change the Gd grain size. The lattice parameters obtained from X-ray results change significantly only for [Gd(1.5nm/Ti]50 multilayers, but their values remain higher than for the bulk Gd. The initial slope of the temperature dependence of magnetization near Curie temperature becomes steeper and Curie temperature increases upon annealing. Curie temperature variation can be understood by taking into account both relaxation of the lattice imperfections and change in lattice constants.

  12. Rapid Thermal Annealing of Cathode-Garnet Interface toward High-Temperature Solid State Batteries.

    Science.gov (United States)

    Liu, Boyang; Fu, Kun; Gong, Yunhui; Yang, Chunpeng; Yao, Yonggang; Wang, Yanbin; Wang, Chengwei; Kuang, Yudi; Pastel, Glenn; Xie, Hua; Wachsman, Eric D; Hu, Liangbing

    2017-08-09

    High-temperature batteries require the battery components to be thermally stable and function properly at high temperatures. Conventional batteries have high-temperature safety issues such as thermal runaway, which are mainly attributed to the properties of liquid organic electrolytes such as low boiling points and high flammability. In this work, we demonstrate a truly all-solid-state high-temperature battery using a thermally stable garnet solid-state electrolyte, a lithium metal anode, and a V 2 O 5 cathode, which can operate well at 100 °C. To address the high interfacial resistance between the solid electrolyte and cathode, a rapid thermal annealing method was developed to melt the cathode and form a continuous contact. The resulting interfacial resistance of the solid electrolyte and V 2 O 5 cathode was significantly decreased from 2.5 × 10 4 to 71 Ω·cm 2 at room temperature and from 170 to 31 Ω·cm 2 at 100 °C. Additionally, the diffusion resistance in the V 2 O 5 cathode significantly decreased as well. The demonstrated high-temperature solid-state full cell has an interfacial resistance of 45 Ω·cm 2 and 97% Coulombic efficiency cycling at 100 °C. This work provides a strategy to develop high-temperature all-solid-state batteries using garnet solid electrolytes and successfully addresses the high contact resistance between the V 2 O 5 cathode and garnet solid electrolyte without compromising battery safety or performance.

  13. Annealing behaviour of excess carriers in neutron-transmutation-doped silicon

    International Nuclear Information System (INIS)

    Maekawa, T.; Nogami, S.; Inoue, S.

    1993-01-01

    In neutron-transmutation-doped silicon wafers excess carriers are clearly generated over the transmuted phosphorus atoms. The generation occurs for annealing temperatures above 900 o C. The maximum percentage of excess carriers obtained is about 24.5% of the final carrier concentration. Due to the difference in energy of generation and removal, the excess carriers can be removed by annealing above 800 o C. The radiation damage responsible for generation of excess carriers is fairly thermostable in the range of annealing temperatures below 800 o C. From deep-level transient spectroscopy measurements, it is found that the radiation damage remains insensitive to changes in carrier concentration. The activation energies of excess carrier generation and removal are estimated from the analysis of the thermal and temporal behaviours of radiation damage in the annealing process. (Author)

  14. Co2FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

    International Nuclear Information System (INIS)

    Belmeguenai, M.; Tuzcuoglu, H.; Zighem, F.; Chérif, S. M.; Moch, P.; Gabor, M. S.; Petrisor, T.; Tiusan, C.

    2014-01-01

    10 nm and 50 nm Co 2 FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according to CFA(001)[110]//MgO(001)[100] epitaxial relation) for CFA films grown on a Si and on a MgO substrate, respectively. For these later, the chemical order varies from the A2 phase to the B2 phase when increasing the annealing temperature (T a ), while only the A2 disorder type has been observed for CFA grown on Si. Microstrip ferromagnetic resonance (MS-FMR) measurements revealed that the in-plane anisotropy results from the superposition of a uniaxial and a fourfold symmetry term for CFA grown on MgO substrates. This fourfold anisotropy, which disappears completely for samples grown on Si, is in accord with the crystal structure of the samples. The fourfold anisotropy field decreases when increasing T a , while the uniaxial anisotropy field is nearly unaffected by T a within the investigated range. The MS-FMR data also allow for concluding that the gyromagnetic factor remains constant and that the exchange stiffness constant increases with T a . Finally, the FMR linewidth decreases when increasing T a , due to the enhancement of the chemical order. We derive a very low intrinsic damping parameter (1.1×10 −3 and 1.3×10 −3 for films of 50 nm thickness annealed at 615 °C grown on MgO and on Si, respectively)

  15. Models for embrittlement recovery due to annealing of reactor pressure vessel steels

    International Nuclear Information System (INIS)

    Eason, E.D.; Wright, J.E.; Nelson, E.E.; Odette, G.R.; Mader, E.V.

    1995-05-01

    The reactor pressure vessel (RPV) surrounding the core of a commercial nuclear power plant is subject to embrittlement due to exposure to high energy neutrons. The effects of irradiation embrittlement can be reduced by thermal annealing at temperatures higher than the normal operating conditions. However, a means of quantitatively assessing the effectiveness of annealing for embrittlement recovery is needed. The objective of this work was to analyze the pertinent data on this issue and develop quantitative models for estimating the recovery in 30 ft-lb (41 J) Charpy transition temperature and Charpy upper shelf energy due to annealing. Data were gathered from the Test Reactor Embrittlement Data Base and from various annealing reports. An analysis data base was developed, reviewed for completeness and accuracy, and documented as part of this work. Independent variables considered in the analysis included material chemistries, annealing time and temperature, irradiation time and temperature, fluence, and flux. To identify important variables and functional forms for predicting embrittlement recovery, advanced statistical techniques, including pattern recognition and transformation analysis, were applied together with current understanding of the mechanisms governing embrittlement and recovery. Models were calibrated using multivariable surface-fitting techniques. Several iterations of model calibration, evaluation with respect to mechanistic and statistical considerations, and comparison with the trends in hardness data produced correlation models for estimating Charpy upper shelf energy and transition temperature after irradiation and annealing. This work provides a clear demonstration that (1) microhardness recovery is generally a very good surrogate for shift recovery, and (2) there is a high level of consistency between the observed annealing trends and fundamental models of embrittlement and recovery processes

  16. Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Narendra [Materials Science Programme, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Samtel Centre for Display Technologies, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Kumar, Jitendra [Materials Science Programme, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Panda, Siddhartha, E-mail: spanda@iitk.ac.in [Materials Science Programme, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Samtel Centre for Display Technologies, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Department of Chemical Engineering, Indian Institute of Technology Kanpur, Kanpur-208016 (India)

    2015-06-15

    The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO{sub 2}/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS) structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 {sup o}C in N{sub 2} ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 {sup o}C. The increased pH sensitivity with the film annealed at 400 {sup o}C in N{sub 2} gas was attributed to the enhanced lattice oxygen ions (based on the XPS data) and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 {sup o}C was attributed to defects in the films as well as the induced traps at the IGZO/SiO{sub 2} interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here) used as the active layer in a thin film transistors (TFTs) possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.

  17. Formation of interface traps in MOSFETs during annealing following low temperature irradiation

    International Nuclear Information System (INIS)

    Saks, N.S.; Griscom, D.L.; Klein, R.B.

    1988-01-01

    The formation of interface traps N/sub it/ has been studied in MOSFETs during isochronal annealing up to 350 K following exposure to ionizing radiation at 78K. Two distinct N/sub it/ formation processes are observed: (1) A small (1-10% of total) process occurs at 100-150K which the authors argue is caused by neutral atomic hydrogen, and (2) a second higher temperature (200-300K) process which accounts for most (>90%) of the N/sub it/ formation. The characteristics of the high temperature process support the proton (H/sup +/) model of N/sub it/ formation and are not in agreement with several other common models. In the second part of this paper, the authors compare charge pumping and inversion layer mobility techniques for measuring N/sub it/. The authors find that the mobility cannot be used to determine N/sub it/ at 78K (in contrast to its successful use at 295K), probably because of lateral non-uniformities (LNUs) in the large radiation-induced fixed oxide charge

  18. Toward the understanding of annealing effects on (GaIn)2O3 films

    International Nuclear Information System (INIS)

    Zhang, Fabi; Jan, Hideki; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Nagaoka, Takashi; Arita, Makoto; Guo, Qixin

    2015-01-01

    (GaIn) 2 O 3 films with nominal indium content of 0.3 deposited at room temperature by pulsed laser deposition have been annealed in different gas ambient (N 2 , vacuum, Ar, O 2 ) and temperatures (700–1000 °C) in order to understand the annealing effects. X-ray diffraction and X-ray rocking curve revealed that the film annealed at 800 °C under O 2 ambient has best crystallinity. X-ray photoelectron spectroscopy analysis indicated that oxygen ambient annealing has greatly helped on decreasing the oxygen vacancy. (GaIn) 2 O 3 films with different nominal indium content varying from 0.2 to 0.7 annealed at 800 °C under O 2 ambient also showed high crystal quality, improved optical transmittance, and smooth surface. - Highlights: • (GaIn) 2 O 3 films have been annealed in different gas ambient and temperature. • Only oxygen ambient can crystallize (GaIn) 2 O 3 film. • Film annealed at 800 °C appears best crystal quality. • High quality films were obtained with wide indium content varying from 0.2 to 0.7

  19. Influence of sputtering conditions on the optical and electrical properties of laser-annealed and wet-etched room temperature sputtered ZnO:Al thin films

    Energy Technology Data Exchange (ETDEWEB)

    Boukhicha, Rym, E-mail: rym.boukhicha@polytechnique.edu [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Charpentier, Coralie [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Total S and M — New Energies Division, R and D Division, Department of Solar Energies EN/BO/RD/SOL, Tour Michelet, 24 cours Michelet, La Défense 10, 92069 Paris La Défense Cedex (France); Prod' Homme, Patricia [Total S and M — New Energies Division, R and D Division, Department of Solar Energies EN/BO/RD/SOL, Tour Michelet, 24 cours Michelet, La Défense 10, 92069 Paris La Défense Cedex (France); Roca i Cabarrocas, Pere [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France); Lerat, Jean-François; Emeraud, Thierry [Photovoltaic Business Unit, Excico Group NV, Kempische Steenweg 305/2, B-3500 Hasselt (Belgium); Johnson, Erik [CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau (France)

    2014-03-31

    We explore the influence of the sputtering deposition conditions on the outcome of an excimer laser anneal and chemical etching process with the goal of producing highly textured substrates for thin film silicon solar cells. Aluminum-doped zinc oxide (ZnO:Al) thin films were prepared on glass substrates by radio frequency magnetron sputtering from a ceramic target at room temperature. The effects of the process pressure (0.11–1.2 Pa) and oxygen flow (0–2 sccm) on the optical and electrical properties of ZnO:Al thin films have been studied both before and after an excimer laser annealing treatment followed by a dilute HCl chemical etch. The as-deposited films varied from completely opaque to yellowish. Thin film laser annealing dramatically improves the optical properties of the most opaque thin films. After laser annealing at the optimum fluence, the average transmittance in the visible wavelength range was around 80% for most films, and reasonable electrical performance was obtained for the films deposited at lower pressures and without oxygen flux (7 Ω/□ for films of 1 μm). After etching, all films displayed a dramatic improvement in haze, but only the low pressure, low oxygen films retained acceptable electrical properties (< 11 Ω/□). - Highlights: • Al:ZnO thin films were deposited at room temperature. • The ZnO:Al films were excimer laser annealed and then wet-etched. • The optical and electrical properties were studied in details.

  20. Properties of different temperature annealed Cu(In,Ga)Se{sub 2} and Cu(In,Ga){sub 2}Se{sub 3.5} films prepared by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yu Zhou; Liu Lian; Yan Yong; Zhang Yanxia; Li Shasha; Yan Chuanpeng; Zhang Yong [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education of China, Superconductivity and New Energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); Zhao Yong, E-mail: yzhao@swjtu.edu.cn [Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle, Ministry of Education of China, Superconductivity and New Energy R and D Center (SNERDC), Mail Stop 165, Southwest Jiaotong University, Chengdu 610031 (China); School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer The Cu(In,Ga)Se{sub 2} and Cu(In,Ga)2Se{sub 3.5} films follow different process to form CIGS phase. Black-Right-Pointing-Pointer Composition loss of the annealed Cu(In,Ga)Se{sub 2} and Cu(In,Ga){sub 2}Se{sub 3.5} films are different. Black-Right-Pointing-Pointer Hexagonal CuSe phase exhibits unique transport feature. Black-Right-Pointing-Pointer Conductivity of the CIGS films is affected by the 'variable range hopping' mechanism. - Abstract: We have investigated the effect of annealing temperature on structural, compositional, electrical properties of the one-step RF sputtered Cu(In,Ga)Se{sub 2} and Cu(In,Ga){sub 2}Se{sub 3.5} films. After the annealing at various temperatures, loss of Se element is significant for the Cu(In,Ga)Se{sub 2} films and meanwhile composition of the annealed Cu(In,Ga){sub 2}Se{sub 3.5} films keeps almost constant. The as-deposited Cu(In,Ga)Se{sub 2} and Cu(In,Ga){sub 2}Se{sub 3.5} films show amorphous structure and they follow different transformation process to form chalcopyrite structure. Electrical conductivity of the annealed CIGS films related to their chemical composition. Cu(In,Ga)Se{sub 2} films annealed at 150 Degree-Sign C show unique electron transport mechanism for the formation of hexagonal CuSe phase. Electrical conductivity of the chalcopyrite structure films are dominated by the 'variable range hopping' transport mechanism. The annealed Cu(In,Ga){sub 2}Se{sub 3.5} films present higher density of disorders than the annealed Cu(In,Ga)Se{sub 2} films for their significant Cu deficient composition.

  1. Modification of n-Si Characteristics by Annealing and Cooling at Different Rates

    Directory of Open Access Journals (Sweden)

    Subhi K. Salih

    2003-01-01

    for samples annealed at lower than 550°C. For samples annealed at higher temperatures, quenching gave better dark-current density vs. potential plots. SEM measurements showed parallel results to these findings. Enhanced surface textures were observed for slowly cooled wafers from temperatures below 550°C. Samples quenched from temperatures above 550°C showed better surfaces than slowly cooled counterparts.

  2. Numerical analysis on effect of annealing mc-Si ingot grown by DS process for PV application

    Science.gov (United States)

    Aravindan, G.; Srinivasan, M.; Aravinth, K.; Ramasamy, P.

    2017-10-01

    Silicon solar cells play a crucial role in Photo voltaic (PV) application. We have numerically investigated thermal stress and normal stress components (Sigma 11, Sigma 22, Sigma 33 and sigma 12) by using finite volume method. The maximum thermal stress has low value at the centre region for 900 K and 700 K annealing temperatures comparing all the cases. The maximum thermal stress at peripheral region is low for 700 K annealing compared to 900 K annealing. The annealing effect of mc-Si ingot normal stress components is discussed. At 700 K annealing temperature the normal stress in 11 and 33 direction has lower maximum and at the 900 K annealing temperature the normal stress in 22 and 12 direction has lower maximum.

  3. Facile Synthesis of Calcium Borate Nanoparticles and the Annealing Effect on Their Structure and Size

    Directory of Open Access Journals (Sweden)

    Manizheh Navasery

    2012-11-01

    Full Text Available Calcium borate nanoparticles have been synthesized by a thermal treatment method via facile co-precipitation. Differences of annealing temperature and annealing time and their effects on crystal structure, particle size, size distribution and thermal stability of nanoparticles were investigated. The formation of calcium borate compound was characterized by X-ray diffraction (XRD and Fourier Transform Infrared spectroscopy (FTIR, Transmission electron microscopy (TEM, and Thermogravimetry (TGA. The XRD patterns revealed that the co-precipitated samples annealed at 700 °C for 3 h annealing time formed an amorphous structure and the transformation into a crystalline structure only occurred after 5 h annealing time. It was found that the samples annealed at 900 °C are mostly metaborate (CaB2O4 nanoparticles and tetraborate (CaB4O7 nanoparticles only observed at 970 °C, which was confirmed by FTIR. The TEM images indicated that with increasing the annealing time and temperature, the average particle size increases. TGA analysis confirmed the thermal stability of the annealed samples at higher temperatures.

  4. Tailoring structures through two-step annealing process in nanostructured aluminum produced by accumulative roll-bonding

    DEFF Research Database (Denmark)

    Kamikawa, Naoya; Huang, Xiaoxu; Hansen, Niels

    2008-01-01

    temperature before annealing at high temperature. By this two-step process, the structure is homogenized and the stored energy is reduced significantly during the first annealing step. As an example, high-purity aluminum has been deformed to a total reduction of 98.4% (equivalent strain of 4.......8) by accumulative roll-bonding at room temperature. Isochronal annealing for 0.5 h of the deformed samples shows the occurrence of recrystallization at 200 °C and above. However, when introducing an annealing step for 6 h at 175 °C, no significant recrystallization is observed and relatively homogeneous structures...... are obtained when the samples afterwards are annealed at higher temperatures up to 300 °C. To underpin these observations, the structural evolution has been characterized by transmission electron microscopy, showing that significant annihilation of high-angle boundaries, low-angle dislocation boundaries...

  5. Far-infrared spectroscopy of thermally annealed tungsten silicide films

    International Nuclear Information System (INIS)

    Amiotti, M.; Borghesi, A.; Guizzetti, G.; Nava, F.; Santoro, G.

    1991-01-01

    The far-infrared transmittance spectrum of tungsten silicide has been observed for the first time. WSi 2 polycrystalline films were prepared by coevaporation and chemical-vapour deposition on silicon wafers, and subsequently thermally annealed at different temperatures. The observed structures are interpreted, on the basis of the symmetry properties of the crystal, such as infrared-active vibrational modes. Moreover, the marked lineshape dependence on annealing temperature enables this technique to analyse the formation of the solid silicide phases

  6. Chaotic Multiquenching Annealing Applied to the Protein Folding Problem

    Directory of Open Access Journals (Sweden)

    Juan Frausto-Solis

    2014-01-01

    Full Text Available The Chaotic Multiquenching Annealing algorithm (CMQA is proposed. CMQA is a new algorithm, which is applied to protein folding problem (PFP. This algorithm is divided into three phases: (i multiquenching phase (MQP, (ii annealing phase (AP, and (iii dynamical equilibrium phase (DEP. MQP enforces several stages of quick quenching processes that include chaotic functions. The chaotic functions can increase the exploration potential of solutions space of PFP. AP phase implements a simulated annealing algorithm (SA with an exponential cooling function. MQP and AP are delimited by different ranges of temperatures; MQP is applied for a range of temperatures which goes from extremely high values to very high values; AP searches for solutions in a range of temperatures from high values to extremely low values. DEP phase finds the equilibrium in a dynamic way by applying least squares method. CMQA is tested with several instances of PFP.

  7. Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrate

    International Nuclear Information System (INIS)

    Brooks, K.G.; Reaney, I.M.; Klissurska, R.; Huang, Y.; Bursill, L.A.; Setter, N.

    1994-01-01

    The nucleation, growth and orientation of lead zirconate titanate thin films prepared from organometallic precursor solutions by spin coating on (111) oriented platinum substrates and crystallized by rapid thermal annealing was investigated. The effects of pyrolysis temperature, post-pyrolysis thermal treatments, excess lead addition, and Nb dopant substitution are reported. The use of post pyrolysis oxygen anneals at temperatures in the regime of 350-450 deg C was found to strongly effect the kinetics of subsequent amorphous-pyrochlore perovskite crystallization by rapid thermal annealing. It has also allowed films of reproducible microstructure and textures (both (100) and (111)) to be prepared by rapid thermal annealing. It is suggested that such anneals and pyrolysis temperature affect the oxygen concentration/average Pb valence in the amorphous films prior to annealing. The changes in Pb valence state then affect the stability of the transient pyrochlore phase and thus the kinetics of perovskite crystallization. Nb dopant was also found to influence the crystallization kinetics. 28 refs., 18 figs

  8. Thermal Annealing to Modulate the Shape Memory Behavior of a Biobased and Biocompatible Triblock Copolymer Scaffold in the Human Body Temperature Range.

    Science.gov (United States)

    Merlettini, Andrea; Gigli, Matteo; Ramella, Martina; Gualandi, Chiara; Soccio, Michelina; Boccafoschi, Francesca; Munari, Andrea; Lotti, Nadia; Focarete, Maria Letizia

    2017-08-14

    A biodegradable and biocompatible electrospun scaffold with shape memory behavior in the physiological temperature range is here presented. It was obtained starting from a specifically designed, biobased PLLA-based triblock copolymer, where the central block is poly(propylene azelate-co-propylene sebacate) (P(PAz60PSeb40)) random copolymer. Shape memory properties are determined by the contemporary presence of the low melting crystals of the P(PAz60PSeb40) block, acting as switching segment, and of the high melting crystal phase of PLLA blocks, acting as physical network. It is demonstrated that a straightforward annealing process applied to the crystal phase of the switching element gives the possibility to tune the shape recovery temperature from about 25 to 50 °C, without the need of varying the copolymer's chemical structure. The thermal annealing approach here presented can be thus considered a powerful strategy for "ad hoc" programming the same material for applications requiring different recovery temperatures. Fibroblast culture experiments demonstrated scaffold biocompatibility.