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Sample records for annealed sio2 layers

  1. Visible light emission from silicon implanted and annealed SiO2layers

    International Nuclear Information System (INIS)

    Ghislotti, G.; Nielsen, B.; Asoka-Kumar, P.; Lynn, K.G.; Di Mauro, L.F.; Bottani, C.E.; Corni, F.; Tonini, R.; Ottaviani, G.P.

    1997-01-01

    Silicon implanted and annealed SiO 2 layers are studied using photoluminescence (PL) and positron annihilation spectroscopy (PAS). Two PL emission bands are observed. A band centered at 560 nm is present in as-implanted samples and it is still observed after 1,000 C annealing. The emission time is fast. A second band centered at 780 nm is detected after 1,000 C annealing. The intensity of the 780 nm band further increased when hydrogen annealing was performed. The emission time is long (1 micros to 0.2 ms). PAS results show that defects produced by implantation anneal at 600 C. Based on the annealing behavior and on the emission times, the origin of the two bands is discussed

  2. On formation of silicon nanocrystals under annealing SiO2 layers implanted with Si ions

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Yanovskaya, S.G.; Volodin, V.A.; Kesler, V.G.; Lejer, A.F.; Ruault, M.-O.

    2002-01-01

    Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence have been used to study the formation of silicon nanocrystals in SiO 2 implanted with Si ions. Si clusters have been formed at once in the postimplanted layers, providing the excessive Si concentration more ∼ 3 at. %. Si segregation with Si-Si 4 bonds formation is enhanced as following annealing temperature increase, however, the Raman scattering by Si clusters diminishes. The effect is explained by a transformation of the chain-like Si clusters into compact phase nondimensional structures. Segregation of Si nanoprecipitates had ended about 1000 deg C, but the strong photoluminescence typical for Si nanocrystals manifested itself only after 1100 deg C [ru

  3. The structure and elemental composition of the SiO2 layers with zinc-based nano clusters created by high-dose implantation and annealing

    International Nuclear Information System (INIS)

    Mokhovikov, M.A.; Komarov, F.F.; Vlasukova, L.A.; Mil'chanin, O.V.; Wendler, E.; Wesch, W.; Zhukovski, P.; Vengerek, P.

    2015-01-01

    We present the results of the structure and elemental composition of the SiO 2 layers after high-dose zinc implantation (10 16 - 10 17 sm -2 ) at room temperature and at 500°C, as well as after 700°C annealing. In the case of 'hot' implantation the formation of nano sized (to 5 nm) clusters containing atoms of zinc is registered in as-implanted samples. TEM-analysis proves crystalline structure of these precipitates. Subsequent annealing results in a redistribution of zinc within the implanted layer and in the formation of large crystallites (10 -12 nm for a dose of 5*10 16 cm -2 and 12-18 nm for a dose of 10 17 cm -2 ) in the area of high impurity concentration. (authors)

  4. Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

    International Nuclear Information System (INIS)

    Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

    2012-01-01

    In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

  5. Defect layer in SiO2-Sic interface proved by a slow positron beam

    International Nuclear Information System (INIS)

    Maekawa, M.; Kawasuso, A.; Yoshikawa, M.; Miyashita, A.; Suzuki, R.; Ohdaira, T.

    2006-01-01

    The structure of the SiO 2 -4ph-SiC interface layer produced by dry oxidation has been studied by positron annihilation spectroscopy using slow positron beams. From Doppler broadening measurements, the interface layer was clearly distinguished from the SiO 2 and SiC layers and was observed to be defective. At the interface layer, a single long positron lifetime of 451 ps, which is close to the second lifetime in the SiO 2 layer, was obtained, thus suggesting that the structure of the interface layer resembles an amorphous SiO 2 network. A comparison was made between the obtained electron momentum distribution at the interface layer and the theoretical calculation. It was found that positrons annihilate with oxygen valence electrons. By annealing after the oxidation, the annihilation probability of the positrons with oxygen valence electrons and the number of interface traps decreased in the same temperature range, thus suggesting a correlation between interface traps and positron annihilation sites

  6. Effect of water layer at the SiO2/graphene interface on pentacene morphology.

    Science.gov (United States)

    Chhikara, Manisha; Pavlica, Egon; Matković, Aleksandar; Gajić, Radoš; Bratina, Gvido

    2014-10-07

    Atomic force microscopy has been used to examine early stages of pentacene growth on exfoliated single-layer graphene transferred to SiO2 substrates. We have observed 2D growth with mean height of 1.5 ± 0.2 nm on as-transferred graphene. Three-dimensional islands of pentacene with an average height of 11 ± 2 nm were observed on graphene that was annealed at 350 °C prior to pentacene growth. Compellingly similar 3D morphology has been observed on graphene transferred onto SiO2 that was treated with hexamethyldisilazane prior to the transfer of graphene. On multilayer graphene we have observed 2D growth, regardless of the treatment of SiO2. We interpret this behavior of pentacene molecules in terms of the influence of the dipolar field that emerges from the water monolayer at the graphene/SiO2 interface on the surface energy of graphene.

  7. Densification of ∼5 nm-thick SiO_2 layers by nitric acid oxidation

    International Nuclear Information System (INIS)

    Choi, Jaeyoung; Joo, Soyeong; Park, Tae Joo; Kim, Woo-Byoung

    2017-01-01

    Highlights: • Leakage current density of the commercial PECVD grown ∼5 nm SiO_2 layer has been decreased about three orders of magnitude by densification. • The densification of SiO_2 layer is achieved by high oxidation ability of O·. • Densities of suboxide, fixed charge (N_f) and defect state (N_d) in SiO_2/Si interface are decreased by NAOS and PMA. • Tunneling barrier height (Φ_t) is increased because of the increase of atomic density in SiO_2 layer. - Abstract: Low-temperature nitric acid (HNO_3) oxidation of Si (NAOS) has been used to improve the interface and electrical properties of ∼5 nm-thick SiO_2/Si layers produced by plasma-enhanced chemical vapor deposition (PECVD). Investigations of the physical properties and electrical characteristics of these thin films revealed that although their thickness is not changed by NAOS, the leakage current density at a gate bias voltage of −1 V decreases by about two orders of magnitude from 1.868 × 10"−"5 A/cm"2. This leakage current density was further reduced by post-metallization annealing (PMA) at 250 °C for 10 min in a 5 vol.% hydrogen atmosphere, eventually reaching a level (5.2 × 10"−"8 A/cm"2) approximately three orders of magnitude less than the as-grown SiO_2 layer. This improvement is attributed to a decrease in the concentration of suboxide species (Si"1"+, Si"2"+ and Si"3"+) in the SiO_2/Si interface, as well as a decrease in the equilibrium density of defect sites (N_d) and fixed charge density (N_f). The barrier height (Φ_t) generated by a Poole-Frenkel mechanism also increased from 0.205 to 0.371 eV after NAOS and PMA. The decrease in leakage current density is therefore attributed to a densification of the SiO_2 layer in combination with the removal of OH species and increase in interfacial properties at the SiO_2/Si interface.

  8. Effect of annealing induced residual stress on the resonance frequency of SiO2 microcantilevers

    Science.gov (United States)

    Balasubramanian, S.; Prabakar, K.; Tripura Sundari, S.

    2018-04-01

    In the present work, effect of residual stress, induced due to annealing of SiO2 microcantilevers (MCs) on their resonance frequency is studied. SiO2MCs of various dimensions were fabricated using direct laser writer & wet chemical etching method and were annealed at 800 °C in oxygen environment, post release. The residual stress was estimated from the deflection profile of the MCs measured using 3D optical microscope, before and after annealing. Resonance frequency of the MCs was measured using nano-vibration analyzer and was found to change after annealing. Further the frequency shift was found to depend on the MC dimensions. This is attributed to the large stress gradients induced by annealing and associated stiffness changes.

  9. XPS studies of SiO2 surface layers formed by oxygen ion implantation into silicon

    International Nuclear Information System (INIS)

    Schulze, D.; Finster, J.

    1983-01-01

    SiO 2 surface layers of 160 nm thickness formed by 16 O + ion implantation into silicon are examined by X-ray photoelectron spectroscopy measurements into the depth after a step-by-step chemical etching. The chemical nature and the thickness of the transition layer were determined. The results of the XPS measurements show that the outer surface and the bulk of the layers formed by oxygen implantation and subsequent high temperature annealing consist of SiO 2 . There is no evidence for Si or SiO/sub x/ (0 2 and Si is similar to that of thin grown oxide layers. Only its thickness is somewhat larger than in thermal oxide

  10. Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

    Science.gov (United States)

    Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

    Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

  11. Annealing characteristics of SiO2-Si structures after incoherent light pulse processing

    International Nuclear Information System (INIS)

    Sieber, N.; Klabes, R.; Voelskow, M.; Fenske, F.

    1982-01-01

    The behaviour of oxide charges and interface charges in boron implanted and non-implanted SiO 2 -Si structures as well as the electrical activation of the dopants by the action of incoherent light pulses was studied. Depth profiles of electrically active boron ions are presented for different annealing conditions as measured by the pulsed C-V method. It can be concluded that exposure of MOS structures to intense radiation of flash lamps does not increase the fixed charge and the fast state density at the SiO 2 -Si interface if optimal annealing conditions (energy densities) are employed. Low dose boron implanted silicon can be electrically activated without diffusion or segregation of dopants

  12. Annealing behavior of oxygen in-diffusion from SiO2 film to silicon substrate

    International Nuclear Information System (INIS)

    Abe, T.; Yamada-Kaneta, H.

    2004-01-01

    Diffusion behavior of oxygen at (near) the Si/SiO 2 interface was investigated. We first oxidized the floating-zone-grown silicon substrates, and then annealed the SiO 2 -covered substrates in an argon ambient. We examined two different conditions for oxidation: wet and dry oxidation. By the secondary-ion-mass spectrometry, we measured the depth profiles of the oxygen in-diffusion of these heat-treated silicon substrates: We found that the energy of dissolution (in-diffusion) of an oxygen atom that dominates the oxygen concentration at the Si/SiO 2 interface depends on the oxidation condition: 2.0 and 1.7 eV for wet and dry oxidation, respectively. We also found that the barrier heights for the oxygen diffusion in argon anneal were significantly different for different ambients adopted for the SiO 2 formation: 3.3 and 1.8 eV for wet and dry oxidation, respectively. These findings suggest that the microscopic behavior of the oxygen atoms at the Si/SiO 2 interface during the argon anneal depends on the ambient adopted for the SiO 2 formation

  13. Physical and Electrical Properties of SiO2 Layer Synthesized by Eco-Friendly Method

    Science.gov (United States)

    Kim, Jong-Woong; Kim, Young-Seok; Hong, Sung-Jei; Hong, Tae-Hwan; Han, Jeong-In

    2010-05-01

    SiO2 thin film has a wide range of applications, including insulation layers in microelectronic devices, such as semiconductors and flat panel displays, due to its advantageous characteristics. Herein, we developed a new eco-friendly method for manufacturing SiO2 nanoparticles and, thereby, SiO2 paste to be used in the digital printing process for the fabrication of SiO2 film. By excluding harmful Cl- and NO3- elements from the SiO2 nanoparticle synthetic process, we were able to lower the heat treatment temperature for the SiO2 precursor from 600 to 300 °C and the diameter of the final SiO2 nanoparticles to about 14 nm. The synthesized SiO2 nanoparticles were dispersed in an organic solvent with additives to make a SiO2 paste for feasibility testing. The SiO2 paste was printed onto a glass substrate to test the feasibility of using it for digital printing. The insulation resistance of the printed film was high enough for it to be used as an insulation layer for passivation.

  14. Characterisation of NdFeB thin films prepared on (100)Si substrates with SiO2 barrier layers

    International Nuclear Information System (INIS)

    Sood, D.K.; Muralidhar, G.K.

    1998-01-01

    This work presents a systematic study of the deposition and characterization of NdFeB films on substrates of Si(100) and of SiO2 layer thermally grown on Si(100) held at RT, 360 deg C or 440 deg C. The post-deposition annealing is performed at 600 or 800 deg C in vacuum. The films are characterised using the analytical techniques of RBS, SIMS, XRD, OM and SEM. Results indicate that SiO2 is, in deed, an excellent diffusion barrier layer till 600 deg C but becomes relatively less effective at 800 deg C. Without this barrier layer, interdiffusion at the Si-NdFeB film interface leads to formation of iron silicides, α-Fe and B exclusion from the diffusion zone, in competition with the formation of the magnetic NdFeB phase. (authors)

  15. Implantation of P ions in SiO2 layers with embedded Si nanocrystals

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Cherkova, S.G.; Volodin, V.A.; Kesler, V.G.; Gutakovsky, A.K.; Cherkov, A.G.; Bublikov, A.V.; Tetelbaum, D.I.

    2004-01-01

    The effect of 10 13 -10 16 cm -2 P ions implantation and of subsequent annealing on Si nanocrystals (Si-ncs), formed preliminarily in SiO 2 layers by the ion-beam synthesis, has been studied. Photoluminescence (PL), Raman spectroscopy, high resolution electron microscopy (HREM), X-Ray Photoelectron Spectroscopy (XPS) and optical absorption were used for characterizations. The low fluence implantations have shown even individual displacements in Si-ncs quench their PL. Restoration of PL from partly damaged Si-ncs proceeds at annealing less than 1000 deg. C. In the low fluence implanted and annealed samples an increased Si-ncs PL has been found and ascribed to the radiation-induced shock crystallization of stressed Si nanoprecipitates. Annealing at temperatures under 1000 deg. C are inefficient when P ion fluences exceed 10 14 cm -2 , thus becoming capable to amorphize Si-ncs. High crystallization temperature of the amorphized Si-ncs is attributed to a counteraction of their shell layers. After implantation of the highest P fluences an enhanced recovery of PL was found from P concentration over 0.1 at.%. Raman spectroscopy and HREM showed an increased Si-ncs number in such layers. The effect resembles the impurity-enhanced crystallization, known for heavily doped bulk Si. This effect, along with the data obtained by XPS, is considered as an indication P atoms are really present inside the Si-ncs. However, no evidence of free electrons appearance has been observed. The fact is explained by an increased interaction of electrons with the donor nuclei in Si-ncs

  16. Toward intrinsic graphene surfaces: a systematic study on thermal annealing and wet-chemical treatment of SiO2-supported graphene devices.

    Science.gov (United States)

    Cheng, Zengguang; Zhou, Qiaoyu; Wang, Chenxuan; Li, Qiang; Wang, Chen; Fang, Ying

    2011-02-09

    By combining atomic force microscopy and trans-port measurements, we systematically investigated effects of thermal annealing on surface morphologies and electrical properties of single-layer graphene devices fabricated by electron beam lithography on silicon oxide (SiO(2)) substrates. Thermal treatment above 300 °C in vacuum was required to effectively remove resist residues on graphene surfaces. However, annealing at high temperature was found to concomitantly bring graphene in close contact with SiO(2) substrates and induce increased coupling between them, which leads to heavy hole doping and severe degradation of mobilities in graphene devices. To address this problem, a wet-chemical approach employing chloroform was developed in our study, which was shown to enable both intrinsic surfaces and enhanced electrical properties of graphene devices. Upon the recovery of intrinsic surfaces of graphene, the adsorption and assisted fibrillation of amyloid β-peptide (Aβ1-42) on graphene were electrically measured in real time.

  17. Effect of re-oxidation annealing process on the SiO2/SiC interface characteristics

    International Nuclear Information System (INIS)

    Yan Hongli; Jia Renxu; Tang Xiaoyan; Song Qingwen; Zhang Yuming

    2014-01-01

    The effect of the different re-oxidation annealing (ROA) processes on the SiO 2 /SiC interface characteristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance—voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 °C for 30 min, while a large number of effective dielectric charges are generated. The components at the SiO 2 /SiC interface are analyzed by X-ray photoelectron spectroscopy (XPS) testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process. (semiconductor technology)

  18. Thickness and composition of ultrathin SiO2 layers on Si

    NARCIS (Netherlands)

    van der Marel, C; Verheijen, M.A.; Tamminga, Y; Pijnenburg, RHW; Tombros, N; Cubaynes, F

    2004-01-01

    Ultrathin SiO2 layers are of importance for the semiconductor industry. One of the techniques that can be used to determine the chemical composition and thickness of this type of layers is x-ray photoelectron spectroscopy (XPS). As shown by Seah and Spencer [Surf. Interface Anal. 33, 640 (2002)], it

  19. Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2

    International Nuclear Information System (INIS)

    Stavarache, Ionel; Lepadatu, Ana-Maria; Stoica, Toma; Ciurea, Magdalena Lidia

    2013-01-01

    Ge–SiO 2 films with high Ge/Si atomic ratio of about 1.86 were obtained by co-sputtering of Ge and SiO 2 targets and subsequently annealed at different temperatures between 600 and 1000 °C in a conventional furnace in order to show how the annealing process influences the film morphology concerning the Ge nanocrystal and/or amorphous nanoparticle formation and to study their electrical behaviour. Atomic force microscopy (AFM) imaging, Raman spectroscopy and electrical conductance measurements were performed in order to find out the annealing effect on the film surface morphology, as well as the Ge nanoparticle formation in correlation with the hopping conductivity of the films. AFM images show that the films annealed at 600 and 700 °C present a granular surface with particle height of about 15 nm, while those annealed at higher temperatures have smoother surface. The Raman investigations evidence Ge nanocrystals (including small ones) coexisting with amorphous Ge in the films annealed at 600 °C and show that almost all Ge is crystallized in the films annealed at 700 °C. The annealing at 800 °C disadvantages the Ge nanocrystal formation due to the strong Ge diffusion. This transition in Ge nanocrystals formation process by annealing temperature increase from 700 to 800 °C revealed by AFM and Raman spectroscopy measurements corresponds to a change in the electrical transport mechanism. Thus, in the 700 °C annealed films, the current depends on temperature according to a T −1/2 law which is typical for a tunnelling mechanism between neighbour Ge nanocrystals. In the 800 °C annealed films, the current–temperature characteristic has a T −1/4 dependence showing a hopping mechanism within an electronic band of localized states related to diffused Ge in SiO 2 .

  20. Surface Phenomena During Plasma-Assisted Atomic Layer Etching of SiO2.

    Science.gov (United States)

    Gasvoda, Ryan J; van de Steeg, Alex W; Bhowmick, Ranadeep; Hudson, Eric A; Agarwal, Sumit

    2017-09-13

    Surface phenomena during atomic layer etching (ALE) of SiO 2 were studied during sequential half-cycles of plasma-assisted fluorocarbon (CF x ) film deposition and Ar plasma activation of the CF x film using in situ surface infrared spectroscopy and ellipsometry. Infrared spectra of the surface after the CF x deposition half-cycle from a C 4 F 8 /Ar plasma show that an atomically thin mixing layer is formed between the deposited CF x layer and the underlying SiO 2 film. Etching during the Ar plasma cycle is activated by Ar + bombardment of the CF x layer, which results in the simultaneous removal of surface CF x and the underlying SiO 2 film. The interfacial mixing layer in ALE is atomically thin due to the low ion energy during CF x deposition, which combined with an ultrathin CF x layer ensures an etch rate of a few monolayers per cycle. In situ ellipsometry shows that for a ∼4 Å thick CF x film, ∼3-4 Å of SiO 2 was etched per cycle. However, during the Ar plasma half-cycle, etching proceeds beyond complete removal of the surface CF x layer as F-containing radicals are slowly released into the plasma from the reactor walls. Buildup of CF x on reactor walls leads to a gradual increase in the etch per cycle.

  1. Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD

    Science.gov (United States)

    Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Xu, Bingshe

    2018-05-01

    GaN polycrystalline films were successfully grown on amorphous SiO2 by metal-organic chemical vapour deposition to fabricate transferable devices using inorganic films. Field-emission scanning electron microscopy images show that by prolonging the annealing time, re-evaporation is enhanced, which reduced the uniformity of the nucleation layer and GaN films. X-ray diffraction patterns indicate that the decomposition rate of the nucleation layer increases when the annealing flow rate of NH3 is 500 sccm, which makes the unstable plane and amorphous domains decompose rapidly, thereby improving the crystallinity of the GaN films. Photoluminescence spectra also indicate the presence of fewer defects when the annealing flow rate of NH3 is 500 sccm. The excellent crystal structure of the GaN films grown under optimized conditions was revealed by transmission electron microscopy analysis. More importantly, the crystal structure and orientation of GaN grown on SiO2 are the same as that of GaN grown on conventional sapphire substrate when a buffer layer is used. This work can aid in the development of transferable devices using GaN films.

  2. Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories

    International Nuclear Information System (INIS)

    Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M.; Spiegel, Y.; Torregrosa, F.; Normand, P.; Dimitrakis, P.; Kapetanakis, E.; Sahu, B. S.; Slaoui, A.

    2013-01-01

    Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO 2 films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories

  3. Thickness and composition of ultrathin SiO2 layers on Si

    International Nuclear Information System (INIS)

    Marel, C. van der; Verheijen, M.A.; Tamminga, Y.; Pijnenburg, R.H.W.; Tombros, N.; Cubaynes, F.

    2004-01-01

    Ultrathin SiO 2 layers are of importance for the semiconductor industry. One of the techniques that can be used to determine the chemical composition and thickness of this type of layers is x-ray photoelectron spectroscopy (XPS). As shown by Seah and Spencer [Surf. Interface Anal. 33, 640 (2002)], it is not trivial to characterize this type of layer by means of XPS in a reliable way. We have investigated a series of ultrathin layers of SiO 2 on Si (in the range from 0.3 to 3 nm) using XPS. The samples were also analyzed by means of transmission electron microscopy (TEM), Rutherford backscattering (RBS), and ellipsometry. The thickness of the SiO 2 layers (d) was determined from the XPS results using three different approaches: the 'standard' equation (Seah and Spencer) for d, an overlayer-substrate model calculation, and the QUASES-Tougaard [Surf. Interface Anal. 26, 249 (1998), QUASES-Tougaard: Software package for Quantitative Analysis of Surfaces by Electron Spectroscopy, version 4.4 (2000); http://www.quases.com] method. Good agreement was obtained between the results of XPS analyses using the 'standard' equation, the overlayer-substrate model calculation, and RBS results. The QUASES-Tougaard results were approximately 62% above the other XPS results. The optical values for the thickness were always slightly higher than the thickness according to XPS or RBS. Using the model calculation, these (relatively small) deviations from the optical results could be explained as being a consequence of surface contaminations with hydrocarbons. For a thickness above 2.5 nm, the TEM results were in good agreement with the results obtained from the other techniques (apart from QUASES-Tougaard). Below 2.5 nm, significant deviations were found between RBS, XPS, and optical data on the one hand and TEM results on the other hand; the deviations became larger as the thickness of the SiO 2 decreased. This effect may be related to interface states of oxygen, which have been

  4. Effect of rapid thermal annealing temperature on the dispersion of Si nanocrystals in SiO2 matrix

    International Nuclear Information System (INIS)

    Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

    2015-01-01

    Effect of rapid thermal annealing temperature on the dispersion of silicon nanocrystals (Si-NC’s) embedded in SiO 2 matrix grown by atom beam sputtering (ABS) method is reported. The dispersion of Si NCs in SiO 2 is an important issue to fabricate high efficiency devices based on Si-NC’s. The transmission electron microscopy studies reveal that the precipitation of excess silicon is almost uniform and the particles grow in almost uniform size upto 850 °C. The size distribution of the particles broadens and becomes bimodal as the temperature is increased to 950 °C. This suggests that by controlling the annealing temperature, the dispersion of Si-NC’s can be controlled. The results are supported by selected area diffraction (SAED) studies and micro photoluminescence (PL) spectroscopy. The discussion of effect of particle size distribution on PL spectrum is presented based on tight binding approximation (TBA) method using Gaussian and log-normal distribution of particles. The study suggests that the dispersion and consequently emission energy varies as a function of particle size distribution and that can be controlled by annealing parameters

  5. Strong piezoelectricity in single-layer graphene deposited on SiO2 grating substrates.

    Science.gov (United States)

    da Cunha Rodrigues, Gonçalo; Zelenovskiy, Pavel; Romanyuk, Konstantin; Luchkin, Sergey; Kopelevich, Yakov; Kholkin, Andrei

    2015-06-25

    Electromechanical response of materials is a key property for various applications ranging from actuators to sophisticated nanoelectromechanical systems. Here electromechanical properties of the single-layer graphene transferred onto SiO2 calibration grating substrates is studied via piezoresponse force microscopy and confocal Raman spectroscopy. The correlation of mechanical strains in graphene layer with the substrate morphology is established via Raman mapping. Apparent vertical piezoresponse from the single-layer graphene supported by underlying SiO2 structure is observed by piezoresponse force microscopy. The calculated vertical piezocoefficient is about 1.4 nm V(-1), that is, much higher than that of the conventional piezoelectric materials such as lead zirconate titanate and comparable to that of relaxor single crystals. The observed piezoresponse and achieved strain in graphene are associated with the chemical interaction of graphene's carbon atoms with the oxygen from underlying SiO2. The results provide a basis for future applications of graphene layers for sensing, actuating and energy harvesting.

  6. Atmospheric Plasma Deposition of SiO2 Films for Adhesion Promoting Layers on Titanium

    Directory of Open Access Journals (Sweden)

    Liliana Kotte

    2014-12-01

    Full Text Available This paper evaluates the deposition of silica layers at atmospheric pressure as a pretreatment for the structural bonding of titanium (Ti6Al4V, Ti15V3Cr3Sn3Al in comparison to an anodizing process (NaTESi process. The SiO2 film was deposited using the LARGE plasma source, a linearly extended DC arc plasma source and applying hexamethyldisiloxane (HMDSO as a precursor. The morphology of the surface was analyzed by means of SEM, while the characterization of the chemical composition of deposited plasma layers was done by XPS and FTIR. The long-term durability of bonded samples was evaluated by means of a wedge test in hot/wet condition. The almost stoichiometric SiO2 film features a good long-term stability and a high bonding strength compared to the films produced with the wet-chemical NaTESi process.

  7. Thermal Annealing Effect on Optical Properties of Binary TiO2-SiO2 Sol-Gel Coatings

    Directory of Open Access Journals (Sweden)

    Xiaodong Wang

    2012-12-01

    Full Text Available TiO2-SiO2 binary coatings were deposited by a sol-gel dip-coating method using tetrabutyl titanate and tetraethyl orthosilicate as precursors. The structure and chemical composition of the coatings annealed at different temperatures were analyzed by Raman spectroscopy and Fourier Transform Infrared (FTIR spectroscopy. The refractive indices of the coatings were calculated from the measured transmittance and reflectance spectra. An increase in refractive index with the high temperature thermal annealing process was observed. The Raman and FTIR results indicate that the refractive index variation is due to changes in the removal of the organic component, phase separation and the crystal structure of the binary coatings.

  8. Formation of light-emitting nanostructures in layers of stoichiometric SiO2 irradiated with swift heavy ions

    International Nuclear Information System (INIS)

    Kachurin, G. A.; Cherkova, S. G.; Skuratov, V. A.; Marin, D. V.; Kesler, V. G.; Volodin, V. A.

    2011-01-01

    Thermally grown SiO 2 layers have been irradiated with 700-MeV Bi ions with doses of (3–10) × 10 12 cm −2 . It is found that, even after a dose of 3 × 10 12 cm −2 , a photoluminescence band in the region of 600 nm appears. Its intensity levels off at a dose of ∼5 × 10 12 cm −2 . The nature of the emission centers is studied by the methods of infrared transmission, Raman scattering, X-ray photoelectron spectroscopy, ellipsometry, and the reaction to passivating low-temperature anneals. It is established that irradiation brings about a decrease in the number of Si-O bonds with a relevant increase in the Si-Si bonds. It is assumed that the photoluminescence is caused by nanostructures containing an excess Si and/or having a deficit of O. The reaction of reduction of SiO 2 proceeds in ion tracks due to high levels of ionization and heating within these tracks. The dose dependence is used to estimate the diameter of a track at 8–9 nm.

  9. Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2 films subjected to rapid thermal annealing

    International Nuclear Information System (INIS)

    Fu Mingyue; Tsai, J.-H.; Yang, C.-F.; Liao, C.-H.

    2008-01-01

    We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO 2 films implanted by different doses of Si + ions. Room-temperature PL from 400-nm-thick SiO 2 films implanted to a dose of 3x10 16 cm -2 shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150 deg. C) and duration (5-20 s). The reported approach of implanting silicon into SiO 2 films followed by RTA may be effective for tuning Si-based photonic devices.

  10. Realization of Colored Multicrystalline Silicon Solar Cells with SiO2/SiNx:H Double Layer Antireflection Coatings

    Directory of Open Access Journals (Sweden)

    Minghua Li

    2013-01-01

    Full Text Available We presented a method to use SiO2/SiNx:H double layer antireflection coatings (DARC on acid textures to fabricate colored multicrystalline silicon (mc-Si solar cells. Firstly, we modeled the perceived colors and short-circuit current density (Jsc as a function of SiNx:H thickness for single layer SiNx:H, and as a function of SiO2 thickness for the case of SiO2/SiNx:H (DARC with fixed SiNx:H (refractive index n=2.1 at 633 nm, and thickness = 80 nm. The simulation results show that it is possible to achieve various colors by adjusting the thickness of SiO2 to avoid significant optical losses. Therefore, we carried out the experiments by using electron beam (e-beam evaporation to deposit a layer of SiO2 over the standard SiNx:H for 156×156 mm2 mc-Si solar cells which were fabricated by a conventional process. Semisphere reflectivity over 300 nm to 1100 nm and I-V measurements were performed for grey yellow, purple, deep blue, and green cells. The efficiency of colored SiO2/SiNx:H DARC cells is comparable to that of standard SiNx:H light blue cells, which shows the potential of colored cells in industrial applications.

  11. Space charge limitation of the current in implanted SiO2 layers

    International Nuclear Information System (INIS)

    Szydlo, N.; Poirier, R.

    1974-01-01

    Metal-oxide-semiconductor capacitors were studied where the metal is a semitransparent gold layer of 5mm diameter, the oxide is thermal silica whose, thickness depends on the nature of the implant, and the semiconductor is N-type silicon of 5 ohms/cm. The SiO 2 thickness was chosen in such a way that the maximum of the profile of the implanted substance is in the medium of the oxide layer. In the case of virgin silica, the oscillations in the photocurrent versus energy and exponential variations versus the applied voltage show that the photoconduction obeys the model of injection limited current. In the case of the oxide after ion bombardment, the photocurrent similarity, independent of the direction of the electric field in silica, shows that volume transport phenomena become preponderent [fr

  12. Formation of Pentacene wetting layer on the SiO2 surface and charge trap in the wetting layer

    International Nuclear Information System (INIS)

    Kim, Chaeho; Jeon, D.

    2008-01-01

    We studied the early-stage growth of vacuum-evaporated pentacene film on a native SiO 2 surface using atomic force microscopy and in-situ spectroscopic ellipsometry. Pentacene deposition prompted an immediate change in the ellipsometry spectra, but atomic force microscopy images of the early stage films did not show a pentacene-related morphology other than the decrease in the surface roughness. This suggested that a thin pentacene wetting layer was formed by pentacene molecules lying on the surface before the crystalline islands nucleated. Growth simulation based on the in situ spectroscopic ellipsometry spectra supported this conclusion. Scanning capacitance microscopy measurement indicated the existence of trapped charges in the SiO 2 and pentacene wetting layer

  13. Processing of SiO2 protective layer using HMDS precursor by combustion CVD.

    Science.gov (United States)

    Park, Kyoung-Soo; Kim, Youngman

    2011-08-01

    Hexamethyldisilazane (HMDS, [(CH3)3Si]2NH) was used as a precursor to form SiO2 protective coatings on IN738LC alloys by combustion chemical vapor deposition (CCVD). SEM and XPS showed that the processed coatings were composed mainly of SiO2. The amount of HMDS had the largest effect on the size of the SiO2 agglomerates and the thickness of the deposited coatings. The specimens coated with SiO2 using the 0.05 mol/l HMDS solution showed a significantly higher temperature oxidation resistance than those deposited under other conditions.

  14. Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

    Science.gov (United States)

    Cao, Yan-Qiang; Wu, Bing; Wu, Di; Li, Ai-Dong

    2017-05-01

    In situ-formed SiO2 was introduced into HfO2 gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO2/SiO2 high-k gate dielectric stacks on Ge have been well investigated. It has been demonstrated that Si-O-Ge interlayer is formed on Ge surface during the in situ PEALD SiO2 deposition process. This interlayer shows fantastic thermal stability during annealing without obvious Hf-silicates formation. In addition, it can also suppress the GeO2 degradation. The electrical measurements show that capacitance equivalent thickness of 1.53 nm and a leakage current density of 2.1 × 10-3 A/cm2 at gate bias of Vfb + 1 V was obtained for the annealed sample. The conduction (valence) band offsets at the HfO2/SiO2/Ge interface with and without PDA are found to be 2.24 (2.69) and 2.48 (2.45) eV, respectively. These results indicate that in situ PEALD SiO2 may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.

  15. Effect of a SiO2 buffer layer on the characteristics of In2O3-ZnO-SnO2 films deposited on PET substrates

    International Nuclear Information System (INIS)

    Woo, B.-J.; Hong, J.-S.; Kim, S.-T.; Kim, H.-M.; Park, S.-H.; Kim, J.-J.; Ahn, J.-S.

    2006-01-01

    Transparent and conducting In 2 O 3 -ZnO-SnO 2 (IZTO) thin films were prepared on flexible PET substrates at room temperature by using an ion-gun-assisted sputtering technique. We mainly investigated the effect of a SiO 2 buffer layer, deposited in-between the film and the PET substrate, on the electrical stability of the film under various external stresses caused by moist-heat or violent temperature variations. The insertion of the SiO 2 layer improves structural, optical and electrical properties of the films: The IZTO/SiO 2 /PET film with a buffer shows a change (∼4 %) in the sheet resistance much smaller than that of the IZTO/PET film without a buffer (∼22 %), against a severe thermal stress of the repeated processes between quenching at -25 .deg. C and annealing at 100 .deg. C for 5 min at each process. Under a moist-heat stress at 90 % relative humidity at 80 .deg. C, the IZTO/SiO 2 /PET film responds with only a slight change (∼8.5 %) in the sheet resistance from 30.2 to 33.0 Ω/□ after being exposed for 240 h. The enhanced stability is understood to be the result of the buffer layers acting as a blocking barrier to water vapor or organic solvents diffusing from the PET substrate during deposition or annealing.

  16. Passivation of pigment-grade TiO2 particles by nanothick atomic layer deposited SiO2 films

    International Nuclear Information System (INIS)

    King, David M; Liang Xinhua; Weimer, Alan W; Burton, Beau B; Akhtar, M Kamal

    2008-01-01

    Pigment-grade TiO 2 particles were passivated using nanothick insulating films fabricated by atomic layer deposition (ALD). Conformal SiO 2 and Al 2 O 3 layers were coated onto anatase and rutile powders in a fluidized bed reactor. SiO 2 films were deposited using tris-dimethylaminosilane (TDMAS) and H 2 O 2 at 500 deg. C. Trimethylaluminum and water were used as precursors for Al 2 O 3 ALD at 177 deg. C. The photocatalytic activity of anatase pigment-grade TiO 2 was decreased by 98% after the deposition of 2 nm SiO 2 films. H 2 SO 4 digest tests were performed to exhibit the pinhole-free nature of the coatings and the TiO 2 digest rate was 40 times faster for uncoated TiO 2 than SiO 2 coated over a 24 h period. Mass spectrometry was used to monitor reaction progress and allowed for dosing time optimization. These results demonstrate that the TDMAS-H 2 O 2 chemistry can deposit high quality, fully dense SiO 2 films on high radius of curvature substrates. Particle ALD is a viable passivation method for pigment-grade TiO 2 particles

  17. Annealing temperature and environment effects on ZnO nanocrystals embedded in SiO2: a photoluminescence and TEM study.

    Science.gov (United States)

    Pita, Kantisara; Baudin, Pierre; Vu, Quang Vinh; Aad, Roy; Couteau, Christophe; Lérondel, Gilles

    2013-12-06

    We report on efficient ZnO nanocrystal (ZnO-NC) emission in the near-UV region. We show that luminescence from ZnO nanocrystals embedded in a SiO2 matrix can vary significantly as a function of the annealing temperature from 450°C to 700°C. We manage to correlate the emission of the ZnO nanocrystals embedded in SiO2 thin films with transmission electron microscopy images in order to optimize the fabrication process. Emission can be explained using two main contributions, near-band-edge emission (UV range) and defect-related emissions (visible). Both contributions over 500°C are found to be size dependent in intensity due to a decrease of the absorption cross section. For the smallest-size nanocrystals, UV emission can only be accounted for using a blueshifted UV contribution as compared to the ZnO band gap. In order to further optimize the emission properties, we have studied different annealing atmospheres under oxygen and under argon gas. We conclude that a softer annealing temperature at 450°C but with longer annealing time under oxygen is the most preferable scenario in order to improve near-UV emission of the ZnO nanocrystals embedded in an SiO2 matrix.

  18. Electroless Ni-B plating on SiO2 with 3-aminopropyl-triethoxysilane as a barrier layer against Cu diffusion for through-Si via interconnections in a 3-dimensional multi-chip package

    International Nuclear Information System (INIS)

    Ikeda, Akihiro; Sakamoto, Atsushi; Hattori, Reiji; Kuroki, Yukinori

    2009-01-01

    Electroless Ni-B was plated on SiO 2 as a barrier layer against Cu diffusion for through-Si via (TSV) interconnections in a 3-dimensional multi-chip package. The electroless Ni-B was deposited on the entire area of the SiO 2 side wall of a deep via with vapor phase pre-deposition of 3-aminopropyl-triethoxysilane on the SiO 2 . The carrier lifetimes in the Si substrates plated with Ni-B/Cu did not decrease with an increase in annealing temperature up to 400 deg. C . The absence of degradation of carrier lifetimes indicates that Cu atoms did not diffuse into the Si through the Ni-B. The advantages of electroless Ni-B (good conformal deposition and forming an effective diffusion barrier against Cu) make it useful as a barrier layer for TSV interconnections in a 3-dimensional multi-chip package

  19. Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

    Science.gov (United States)

    Nag, Jadupati; Ray, Nirat

    2018-05-01

    Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

  20. Enhanced Visible Transmittance of Thermochromic VO2 Thin Films by SiO2 Passivation Layer and Their Optical Characterization

    Directory of Open Access Journals (Sweden)

    Jung-Hoon Yu

    2016-07-01

    Full Text Available This paper presents the preparation of high-quality vanadium dioxide (VO2 thermochromic thin films with enhanced visible transmittance (Tvis via radio frequency (RF sputtering and plasma enhanced chemical vapor deposition (PECVD. VO2 thin films with high Tvis and excellent optical switching efficiency (Eos were successfully prepared by employing SiO2 as a passivation layer. After SiO2 deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO2 coating, the phase transition temperature (Tc of the prepared films was not affected. Compared with pristine VO2, the total layer thickness after SiO2 coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO2 thin films showed a higher Tvis value (λ 650 nm, 58% compared with the pristine samples (λ 650 nm, 43%. This enhancement of Tvis while maintaining high Eos is meaningful for VO2-based smart window applications.

  1. Atomic layer deposition of W - based layers on SiO2

    NARCIS (Netherlands)

    van Nieuwkasteele-Bystrova, Svetlana Nikolajevna; Holleman, J.; Wolters, Robertus A.M.; Aarnink, Antonius A.I.

    2003-01-01

    W and W1-xNx , where x= 15- 22 at%, thin films were grown using the ALD (Atomic Layer Deposition) principle. Growth rate of W films is about 4- 5 monolayers/ cycle at 300- 350 ºC. Growth rate of W1-xNx is 0.5 monolayer/cycle at 325- 350 ºC. Standard Deviation (STDV) of thickness is about 2%

  2. Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.; Wang, H.; Schwingenschlö gl, Udo; Alshareef, Husam N.

    2012-01-01

    The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.

  3. Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-09-10

    The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.

  4. Preparation and characterization of layer-by-layer self-assembled polyelectrolyte multilayer films doped with surface-capped SiO2 nanoparticles.

    Science.gov (United States)

    Yang, Guangbin; Ma, Hongxia; Yu, Laigui; Zhang, Pingyu

    2009-05-15

    SiO(2) nanoparticles capped with gamma-aminopropyltrimethoxysilane were doped into polyelectrolyte (poly(allylamine hydrochloride), PAH, and poly(acrylic acid), PAA) multilayer films via spin-assisted layer-by-layer self-assembly. The resulting as-prepared multilayer films were heated at a proper temperature to generate cross-linked composite films with increased adhesion to substrates. The tribological behavior of the multilayer films was evaluated on a microtribometer. It was found that SiO(2)-doped composite films had better wear resistance than pure polyelectrolyte multilayers, possibly because doped SiO(2) nanoparticles were capable of enhancing load-carrying capacity and had "miniature ball bearings" effect. Moreover, heat-treatment had significant effect on the morphology of the composite films. Namely, heat-treated (SiO(2)/PAA)(9) film had a larger roughness than the as-prepared one, due to heat-treatment-induced agglomeration of SiO(2) nanoparticles and initiation of defects. However, heat-treated (PAH/PAA)(3)/(SiO(2)/PAA)(3)(PAH/PAA)(3) film had greatly reduced roughness than the as-prepared one, and it showed considerably improved wear resistance as well. This could be closely related to the "sandwich-like" structure of the composite multilayer film. Namely, the outermost strata of composite multilayer film were able to eliminate defects associated with the middle strata, allowing nanoparticles therein to maintain strength and robustness while keeping soft and fluid-like exposed surface. And the inner strata were well anchored to substrate and acted as an initial "bed" for SiO(2) nanoparticles to be inhabited, resulting in good antiwear ability.

  5. Modulation of the thermoluminescence glow curve of sol-gel synthesized SiO2 and Si O-2:Eu through thermal annealing

    International Nuclear Information System (INIS)

    Salas J, Ch. J.; Cruz V, C.; Bernal, R.; Castano, V. M.

    2015-10-01

    Full text: Due to the increasing use of ionizing radiations, is necessary to monitor the radiation fields and exposure doses in facilities in which they are used. Different facilities or applications involve the use of different radiation and doses, and the sort of needed dosimetry also varies. Sometimes a conventional thermoluminescence (Tl) dosimetry satisfy the requirements since the record of the accumulated dose in a time interval is enough, but other cases could require for real-time measurement of a radiation field, being required a non-Tl dosimetric technique. On the other hand, different applications involve the use of different dose ranges, and so dosimeters with different sensitivities are needed. To solve the diverse needs of radiation detectors and dosimeters, a lot of phosphors materials has been characterized concerning their dosimetric capabilities. For medical application, biocompatible materials are desirable. In this work, we present experimental evidence that Sol-Gel synthesized SiO 2 and SiO 2 :Eu phosphors exhibit Tl glow curves composed by the superposition of several individual glow peaks each located at different temperature ranging from values below 100 up to temperatures greater than 400 degrees C, whose relative sensitivities can be modified by subjecting the phosphors to different thermal annealing. By modulating the relative intensities of the individual Tl peaks, glow curves with different shapes are obtained in such a way that SiO 2 and SiO 2 :Eu can be used to develop dosimeters useful for different dose ranges, and for both, conventional thermoluminescence dosimetry and non-thermoluminescence afterglow-based) dosimetry. (Author)

  6. Effect of Si implantation on the microstructure of silicon nanocrystals and surrounding SiO2 layer

    International Nuclear Information System (INIS)

    Ross, G.G.; Smirani, R.; Levitcharsky, V.; Wang, Y.Q.; Veilleux, G.; Saint-Jacques, R.G.

    2005-01-01

    Si nanocrystals (Si-nc) embedded in a SiO 2 layer have been characterized by means of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). For local Si concentration in excess 8 x 10 21 Si + /cm 3 , the size of the Si-nc was found to be ∼3 nm and comparatively homogeneous throughout the whole implanted layer. For local Si concentration in excess of ∼2.4 x 10 22 Si + /cm 3 , the Si-nc diameter ranges from ∼2 to ∼12 nm in the sample, the Si-nc in the middle region of the implanted layer being bigger than those near the surface and the bottom of the layer. Also, Si-nc are visible deeper than the implanted depth. Characterization by XPS shows that a large quantity of oxygen was depleted from the first ∼25 nm in this sample (also visible on TEM image) and most of the SiO 2 bonds have been replaced by Si-O bonds. Experimental and simulation results suggest that a local Si concentration in excess of ∼3 x 10 21 Si/cm 3 is required for the production of Si-nc

  7. Surface PIXE analysis of phosphorus in a thin SiO2 (P, B) CVD layer deposited onto Si substrate

    International Nuclear Information System (INIS)

    Roumie, M.; Nsouli, B.

    2001-01-01

    Phosphorus determination, at level of percent, in Si matrix is not an easy analytical task. The analyzed materials arc Borophosphosilicate glass which are an important component of silicon based semiconductor technology. It's a thin SiO2 layer (400 nm) doped with boron and phosphorus using, in general, CVD (Chemical Vapor Deposition) process, in order to improve its plasticity, and deposited onto Si substrate. Therefore, the mechanical behaviour of the CVD SiO2 (P, B) layer is very sensitive to the phosphorus concentration. In this work we explore the capability of FIXE (Particle Induced X-ray Emission) to monitor a rapid and accurate quantification of P which is usually very low in such materials (few percent of the thin CVD layer deposited onto a silicon substrate). A systematic study is undertaken using Proton (0.5-3 MeV energy) and helium (1-3 MeV energy) beams, different thickness of X-ray absorber (131 and 146 μm of Kapton filter) and different tilting angles (0,45,60 and 80 deg.). The optimized measurement conditions should improve the P signal detection comparing to the Si and Background ones

  8. Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers

    Science.gov (United States)

    Kachurin, G. A.; Cherkova, S. G.; Marin, D. V.; Kesler, V. G.; Volodin, V. A.; Skuratov, V. A.

    2012-07-01

    Three hundred and twenty nanometer-thick SiO2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 1012 cm-2 and 1014 cm-2, or with 700 MeV Bi ions in the fluence range of 3 × 1012-1 × 1013 cm-2. After irradiation the yellow-orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950-1150 cm-1, Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si-O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO2. Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ˜10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

  9. Light-emitting Si nanostructures formed by swift heavy ions in stoichiometric SiO2 layers

    International Nuclear Information System (INIS)

    Kachurin, G.A.; Cherkova, S.G.; Marin, D.V.; Kesler, V.G.; Volodin, V.A.; Skuratov, V.A.

    2012-01-01

    Three hundred and twenty nanometer-thick SiO 2 layers were thermally grown on the Si substrates. The layers were irradiated with 167 MeV Xe ions to the fluences ranging between 10 12 cm −2 and 10 14 cm −2 , or with 700 MeV Bi ions in the fluence range of 3 × 10 12 –1 × 10 13 cm −2 . After irradiation the yellow–orange photoluminescence (PL) band appeared and grew with the ion fluences. In parallel optical absorption in the region of 950–1150 cm −1 , Raman scattering and X-ray photoelectron spectroscopy evidenced a decrease in the number of Si–O bonds and an increase in the number of Si-coordinated atoms. The results obtained are interpreted as the formation of the light-emitting Si-enriched nanostructures inside the tracks of swift heavy ions through the disproportionation of SiO 2 . Ionization losses of the ions are regarded as responsible for the processes observed. Difference between the dependences of the PL intensity on the fluences of Xe and Bi ions are ascribed to their different stopping energy, therewith the diameters of the tracks of Xe and Bi ions were assessed as <3 nm and ∼10 nm, respectively. The observed shift of the PL bands, induced by Xe and Bi ions, agrees with the predictions of the quantum confinement theory.

  10. Passivation of Flexible YBCO Superconducting Current Lead With Amorphous SiO2 Layer

    Science.gov (United States)

    Johannes, Daniel; Webber, Robert

    2013-01-01

    Adiabatic demagnetization refrigerators (ADR) are operated in space to cool detectors of cosmic radiation to a few 10s of mK. A key element of the ADR is a superconducting magnet operating at about 0.3 K that is continually energized and de-energized in synchronism with a thermal switch, such that a piece of paramagnetic salt is alternately warm in a high magnetic field and cold in zero magnetic field. This causes the salt pill or refrigerant to cool, and it is able to suck heat from an object, e.g., the sensor, to be cooled. Current has to be fed into and out of the magnets from a dissipative power supply at the ambient temperature of the spacecraft. The current leads that link the magnets to the power supply inevitably conduct a significant amount of heat into the colder regions of the supporting cryostat, resulting in the need for larger, heavier, and more powerful supporting refrigerators. The aim of this project was to design and construct high-temperature superconductor (HTS) leads from YBCO (yttrium barium copper oxide) composite conductors to reduce the heat load significantly in the temperature regime below the critical temperature of YBCO. The magnet lead does not have to support current in the event that the YBCO ceases to be superconducting. Cus - tomarily, a normal metal conductor in parallel with the YBCO is a necessary part of the lead structure to allow for this upset condition; however, for this application, the normal metal can be dispensed with. Amorphous silicon dioxide is deposited directly onto the surface of YBCO, which resides on a flexible substrate. The silicon dioxide protects the YBCO from chemically reacting with atmospheric water and carbon dioxide, thus preserving the superconducting properties of the YBCO. The customary protective coating for flexible YBCO conductors is silver or a silver/gold alloy, which conducts heat many orders of magnitude better than SiO2 and so limits the use of such a composite conductor for passing current across a thermal gradient with as little flow of heat as possible to make an efficient current lead. By protecting YBCO on a flexible substrate of low thermal conductivity with SiO2, a thermally efficient and flexible current lead can be fabricated. The technology is also applicable to current leads for 4 K superconducting electronics current biasing. A commercially available thin-film YBCO composite tape conductor is first stripped of its protective silver coating. It is then mounted on a jig that holds the sample flat and acts as a heat sink. Silicon dioxide is then deposited onto the YBCO to a thickness of about 1 micron using PECVD (plasma-enhanced chemical vapor deposition), without heating the YBCO to the point where degradation occurs. Since SiO2 can have good high-frequency electrical properties, it can be used to coat YBCO cable structures used to feed RF signals across temperature gradients. The prime embodiment concerns the conduction of DC current across the cryogenic temperature gradient. The coating is hard and electrically insulating, but flexible.

  11. Temperature stability of c-axis oriented LiNbO3/SiO2/Si thin film layered structures

    International Nuclear Information System (INIS)

    Tomar, Monika; Gupta, Vinay; Mansingh, Abhai; Sreenivas, K.

    2001-01-01

    Theoretical calculations have been performed for the temperature stability of the c-axis oriented LiNbO 3 thin film layered structures on passivated silicon (SiO 2 /Si) substrate with and without a non-piezoelectric SiO 2 overlayer. The phase velocity, electromechanical coupling coefficient and temperature coefficient of delay (TCD) have been calculated. The thicknesses of various layers have been determined for optimum SAW performance with zero TCD. The presence of a non-piezoelectric SiO 2 overlayer on LiNbO 3 film is found to significantly enhance the coupling coefficient. The optimized results reveal that a high coupling coefficient of K 2 =3.45% and a zero TCD can be obtained in the SiO 2 /LiNbO 3 /SiO 2 /Si structure with a 0.235λ thick LiNbO 3 layer sandwiched between 0.1λ thick SiO 2 layers. (author)

  12. Combined RBS and TEM characterization of nano-SiGe layers embedded in SiO2

    International Nuclear Information System (INIS)

    Kling, A.; Ortiz, M.I.; Sangrador, J.; Rodriguez, A.; Rodriguez, T.; Ballesteros, C.; Soares, J.C.

    2006-01-01

    Grazing incidence RBS has been tested as a technique to detect and characterize SiGe nanoparticles embedded in a SiO 2 matrix. Suitable structures were deposited by low pressure chemical vapour deposition and characterized by TEM and RBS. The layers containing nanoparticles have been modelled by stacks of sublayers consisting of SiGeO layers with compositions calculated according to presumed shapes, sizes, Si/Ge ratios and particle area densities and used as input for RUMP. The nanoparticle parameters obtained by fitting the experimental RBS spectra agree well with the findings by TEM. This demonstrates that RBS is a useful and fast technique to characterize this kind of structures

  13. Thermally-driven hydrogen interaction with single-layer graphene on SiO2/Si substrates

    International Nuclear Information System (INIS)

    Feijo, Tais Orestes; Rolim, Guilherme Koszeniewski; Radtke, Claudio; Soares, Gabriel Vieira

    2016-01-01

    Full text: Graphene is a monolayer of carbon with sp 2 hybridization and hexagonal structure. Since all its area is exposed to the atmosphere, it is important to understand how graphene interacts with elements present in the atmosphere, such as hydrogen, oxygen and water, to control the processes of manufacturing [1]. In addition, some studies show that graphene can allow storage of hydrogen for use in fuel cells, which would contribute to the use of clean energies. This study aims to understand the thermally-driven hydrogen interaction with graphene samples. We used samples of graphene deposited on SiO 2 (285 nm) films on Si and then annealed in controlled atmosphere of deuterium (D 2 , natural abundance of 0.15%) at temperatures between 200 and 1000°C. We also investigated hydrogen desorption from graphene using samples previously treated in deuterium at 600°C and afterwards annealed in nitrogen atmosphere between 200 and 1000°C. After annealings, Nuclear Reaction Analysis (NRA) was employed to quantify deuterium, where we observed a large increase in deuterium incorporation above 400°C, with an constant D incorporation until 1000°C. We also observed that the desorption of deuterium from graphene only occurred above 800°C, although D desorption from silicon oxide samples takes place already at 600°C. Raman spectroscopy analysis was performed after each thermal treatment. Results show that defects in the graphene structure increases for higher treatment temperatures in incorporation and in desorption steps. Characterization using X-Ray Photoelectron Spectroscopy (XPS) and Near Edge X-ray Absorption Fine Structure (NEXAFS) will also be presented. [1] A. C. Ferrari, et al., Nanoscale 7 (2015). (author)

  14. Investigation of thin oxide layer removal from Si substrates using an SiO2 atomic layer etching approach: the importance of the reactivity of the substrate

    International Nuclear Information System (INIS)

    Metzler, Dominik; Oehrlein, Gottlieb S; Li, Chen; Lai, C Steven; Hudson, Eric A

    2017-01-01

    The evaluation of a plasma-based atomic layer etching (ALE) approach for native oxide surface removal from Si substrates is described. Objectives include removal of the native oxide while minimizing substrate damage, surface residues and substrate loss. Oxide thicknesses were measured using in situ ellipsometry and surface chemistry was analyzed by x-ray photoelectron spectroscopy. The cyclic ALE approach when used for removal of native oxide SiO 2 from a Si substrate did not remove native oxide to the extent required. This is due to the high reactivity of the silicon substrate during the low-energy (<40 eV) ion bombardment phase of the cyclic ALE approach which leads to reoxidation of the silicon surface. A modified process, which used continuously biased Ar plasma with periodic CF 4 injection, achieved significant oxygen removal from the Si surface, with some residual carbon and fluorine. A subsequent H 2 /Ar plasma exposure successfully removed residual carbon and fluorine while passivating the silicon surface. The combined treatment reduced oxygen and carbon levels to about half compared to as received silicon surfaces. The downside of this process sequence is a net loss of about 40 Å of Si. A generic insight of this work is the importance of the substrate and final surface chemistry in addition to precise etch control of the target film for ALE processes. By a fluorocarbon-based ALE technique, thin SiO 2 layer removal at the Ångstrom level can be precisely performed from an inert substrate, e.g. a thick SiO 2 layer. However, from a reactive substrate, like Si, complete removal of the thin SiO 2 layer is prevented by the high reactivity of low energy Ar + ion bombarded Si. The Si surfaces are reoxidized during the ALE ion bombardment etch step, even for very clean and ultra-low O 2 process conditions. (paper)

  15. Formation of radiative centers in SiO2 by tin high-dose implantation

    International Nuclear Information System (INIS)

    Komarov, F.F.; Parkhomenko, I.N.; Vlasukova, L.A.; Mil'chanin, O.V.; Mokhovikov, M.A.; Wendler, E.; Wesch, W.

    2013-01-01

    The structural transformations in SiO 2 layers implanted with high fluence of Sn ions have been investigated. It has been found that post-implantation annealing results in the β-Sn precipitation as well as the formation of SnO 2 -enriched regions in SiO 2 :Sn matrix. The intensive emission in the range of photon energies 1.5 – 3.5 eV is registered for the implanted and annealed samples. We attribute it to the oxygen deficiency centers created in the SiO 2 :Sn matrix and at the 'nanocluster/SiO 2 ' interfaces. (authors)

  16. Temperature coefficient of elastic constants of SiO2 over-layer on LiNbO3 for a temperature stable SAW device

    International Nuclear Information System (INIS)

    Tomar, Monika; Gupta, Vinay; Sreenivas, K

    2003-01-01

    The influence of sputtered SiO 2 over-layer on the SAW propagation characteristics of a 128 deg. rotated Y-cut X-propagating lithium niobate SAW filter has been studied. Experimentally measured SAW phase velocity and temperature coefficient of delay (TCD), with varying SiO 2 over-layer thickness, show a significant deviation from the theoretically calculated values using the bulk material parameters of SiO 2 . The observed deviation is attributed to the differences in the material parameters (density, elastic and dielectric constants and their temperature coefficient) of the deposited SiO 2 over-layer. The density and the dielectric constant of the deposited SiO 2 layer were determined separately, and the elastic constants and their temperature coefficients were estimated by fitting the experimental velocity and TCD data, respectively. The deviation in the dielectric constant and the density in comparison to the bulk was insignificant, and the estimated values of the elastic constants (C 11 = 0.75x10 11 N m -2 and C 44 0.225x10 11 N m -2 ) were found to be lower, and the respective temperature coefficients (5.0x10 -4 deg C -1 and 2.0x10 -4 deg C -1 ) were high in comparison to the bulk material parameters

  17. Whiter, brighter, and more stable cellulose paper coated with TiO2 /SiO2 core/shell nanoparticles using a layer-by-layer approach.

    Science.gov (United States)

    Cheng, Fei; Lorch, Mark; Sajedin, Seyed Mani; Kelly, Stephen M; Kornherr, Andreas

    2013-08-01

    To inhibit the photocatalytic degradation of organic material supports induced by small titania (TiO2 ) nanoparticles, four kinds of TiO2 nanoparticles, that is, commercial P25-TiO2 , commercial rutile phase TiO2 , rutile TiO2 nanorods and rutile TiO2 spheres, prepared from TiCl4 , were coated with a thin, but dense, coating of silica (SiO2 ) using a conventional sol-gel technique to form TiO2 /SiO2 core/shell nanoparticles. These core/shell particles were deposited and fixed as a very thin coating onto the surface of cellulose paper samples by a wet-chemistry polyelectrolyte layer-by-layer approach. The TiO2 /SiO2 nanocoated paper samples exhibit higher whiteness and brightness and greater stability to UV-bleaching than comparable samples of blank paper. There are many potential applications for this green chemistry approach to protect cellulosic fibres from UV-bleaching in sunlight and to improve their whiteness and brightness. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Oxygen recoil implant from SiO2 layers into single-crystalline silicon

    International Nuclear Information System (INIS)

    Wang, G.; Chen, Y.; Li, D.; Oak, S.; Srivastav, G.; Banerjee, S.; Tasch, A.; Merrill, P.; Bleiler, R.

    2001-01-01

    It is important to understand the distribution of recoil-implanted atoms and the impact on device performance when ion implantation is performed at a high dose through surface materials into single crystalline silicon. For example, in ultralarge scale integration impurity ions are often implanted through a thin layer of screen oxide and some of the oxygen atoms are inevitably recoil implanted into single-crystalline silicon. Theoretical and experimental studies have been performed to investigate this phenomenon. We have modified the Monte Carlo ion implant simulator, UT-Marlowe (B. Obradovic, G. Wang, Y. Chen, D. Li, C. Snell, and A. F. Tasch, UT-MARLOWE Manual, 1999), which is based on the binary collision approximation, to follow the full cascade and to dynamically modify the stoichiometry of the Si layer as oxygen atoms are knocked into it. CPU reduction techniques are used to relieve the demand on computational power when such a full cascade simulation is involved. Secondary ion mass spectrometry (SIMS) profiles of oxygen have been carefully obtained for high dose As and BF 2 implants at different energies through oxide layers of various thicknesses, and the simulated oxygen profiles are found to agree very well with the SIMS data. [copyright] 2001 American Institute of Physics

  19. The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer

    International Nuclear Information System (INIS)

    Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin; Huang, Kai-Wen

    2015-01-01

    Highlights: • Concave nano-patterned sapphire substrates with SiO 2 blocking layer. • The IQE is almost two times larger than that of conventional one. • The EQE was extremely enhanced more than 100%. - Abstract: In contrast to convex nano-pattern sapphire substrates (NPSS), which are frequently used to fabricate high-quality nitride-based light-emitting diodes (LEDs), concave NPSS have been paid relatively less attention. In this study, a concave NPSS was fabricated, and its nitride epitaxial growth process was evaluated in a step by step manner. A SiO 2 layer was used to avoid nucleation over the sidewall and bottom of the nano-patterns to reduce dislocation reformation. Traditional LED structures were grown on the NPSS layer to determine its influence on device performance. X-ray diffraction, etched pit density, inverse leakage current, and internal quantum efficiency (IQE) results showed that dislocations and non-radiative recombination centers are reduced by the NPSS constructed with a SiO 2 blocking layer. An IQE twice that on a planar substrate was also achieved; such a high IQE significantly enhanced the external quantum efficiency of the resultant device. Taken together, the results demonstrate that the SiO 2 blocking layer proposed in this work can enhance the performance of LEDs.

  20. Selective growth of Ge1- x Sn x epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition

    Science.gov (United States)

    Takeuchi, Wakana; Washizu, Tomoya; Ike, Shinichi; Nakatsuka, Osamu; Zaima, Shigeaki

    2018-01-01

    We have investigated the selective growth of a Ge1- x Sn x epitaxial layer on a line/space-patterned SiO2/Si substrate by metal-organic chemical vapor deposition. We examined the behavior of a Sn precursor of tributyl(vinyl)tin (TBVSn) during the growth on Si and SiO2 substrates and investigated the effect of the Sn precursor on the selective growth. The selective growth of the Ge1- x Sn x epitaxial layer was performed under various total pressures and growth temperatures of 300 and 350 °C. The selective growth of the Ge1- x Sn x epitaxial layer on the patterned Si region is achieved at a low total pressure without Ge1- x Sn x growth on the SiO2 region. In addition, we found that the Sn content in the Ge1- x Sn x epitaxial layer increases with width of the SiO2 region for a fixed Si width even with low total pressure. To control the Sn content in the selective growth of the Ge1- x Sn x epitaxial layer, it is important to suppress the decomposition and migration of Sn and Ge precursors.

  1. Fluorocarbon based atomic layer etching of Si_3N_4 and etching selectivity of SiO_2 over Si_3N_4

    International Nuclear Information System (INIS)

    Li, Chen; Metzler, Dominik; Oehrlein, Gottlieb S.; Lai, Chiukin Steven; Hudson, Eric A.

    2016-01-01

    Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self-limited cycles, can precisely control etching depths by limiting the amount of chemical reactant available at the surface. Recently, SiO_2 ALE has been achieved by deposition of a thin (several Angstroms) reactive fluorocarbon (FC) layer on the material surface using controlled FC precursor flow and subsequent low energy Ar"+ ion bombardment in a cyclic fashion. Low energy ion bombardment is used to remove the FC layer along with a limited amount of SiO_2 from the surface. In the present article, the authors describe controlled etching of Si_3N_4 and SiO_2 layers of one to several Angstroms using this cyclic ALE approach. Si_3N_4 etching and etching selectivity of SiO_2 over Si_3N_4 were studied and evaluated with regard to the dependence on maximum ion energy, etching step length (ESL), FC surface coverage, and precursor selection. Surface chemistries of Si_3N_4 were investigated by x-ray photoelectron spectroscopy (XPS) after vacuum transfer at each stage of the ALE process. Since Si_3N_4 has a lower physical sputtering energy threshold than SiO_2, Si_3N_4 physical sputtering can take place after removal of chemical etchant at the end of each cycle for relatively high ion energies. Si_3N_4 to SiO_2 ALE etching selectivity was observed for these FC depleted conditions. By optimization of the ALE process parameters, e.g., low ion energies, short ESLs, and/or high FC film deposition per cycle, highly selective SiO_2 to Si_3N_4 etching can be achieved for FC accumulation conditions, where FC can be selectively accumulated on Si_3N_4 surfaces. This highly selective etching is explained by a lower carbon consumption of Si_3N_4 as compared to SiO_2. The comparison of C_4F_8 and CHF_3 only showed a difference in etching selectivity for FC depleted conditions. For FC accumulation conditions

  2. Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS

    International Nuclear Information System (INIS)

    Schamm, S.; Bonafos, C.; Coffin, H.; Cherkashin, N.; Carrada, M.; Ben Assayag, G.; Claverie, A.; Tence, M.; Colliex, C.

    2008-01-01

    Fabrication of systems in which Si nanoparticles are embedded in a thin silica layer is today mature for non-volatile memory and opto-electronics applications. The control of the different parameters (position, size and density) of the nanoparticles population is a key point to optimize the properties of such systems. A review of dedicated transmission electron microscopy (TEM) methods, which can be used to measure these parameters, is presented with an emphasis on those relying on electron energy-loss spectroscopy (EELS). Defocused bright-field imaging can be used in order to determine topographic information of a whole assembly of nanoparticles, but it is not efficient for looking at individual nanoparticles. High-resolution electron imaging or dark-field imaging can be of help in the case of crystalline particles but they always provide underestimated values of the nanocrystals population. EELS imaging in the low-energy-loss domain around the Si plasmon peak, which gives rise to strong signals, is the only way to visualize all Si nanoparticles within a silica film and to perform reliable size and density measurements. Two complementary types of experiments are investigated and discussed more extensively: direct imaging with a transmission electron microscope equipped with an imaging filter (EFTEM) and indirect imaging from spectrum-imaging data acquired with a scanning transmission electron microscope equipped with a spectrometer (STEM-PEELS). The direct image (EFTEM) and indirect set of spectra (STEM-PEELS) are processed in order to deliver images where the contribution of the silica matrix is minimized. The contrast of the resulting images can be enhanced with adapted numerical filters for further morphometric analysis. The two methods give equivalent results, with an easier access for EFTEM and the possibility of a more detailed study of the EELS signatures in the case of STEM-PEELS. Irradiation damage in such systems is also discussed

  3. Electric properties of La2O3/SiO2/4H-SiC MOS capacitors with different annealing temperatures

    Directory of Open Access Journals (Sweden)

    Yucheng Wang

    2015-08-01

    Full Text Available In this work, we describe a rapid thermal annealing (RTA process for the La2O3/SiO2/4H-SiC interface and investigate its effect on the material’s electrical properties. Our results indicate that the trap charge density and interface state density (Dit are reduced as the RTA temperature increases due to the termination of residual carbon and dangling bonds. We demonstrate that the sample obtained after RTA at 500 °C has the highest breakdown electric field (Efb (7 MV/cm due to a decrease in the trap charge density and an improvement in the interfacial properties. However, when the RTA temperature reaches 600 °C or higher, a lower Efb value (1.2 MV/cm is obtained due to leakage routes generated by the crystallization of La2O3. Based on our results, we conclude that the ideal choice for the RTA temperature is 500 °C.

  4. High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch-stop-layer

    NARCIS (Netherlands)

    Nag, M.; Steudel, S.; Bhoolokam, A.; Chasin, A.; Rockele, M.; Myny, K.; Maas, J.; Fritz, T.; Trube, J.; Groeseneken, G.; Heremans, P.

    2014-01-01

    In this work, we report on high-performance bottom-gate top-contact (BGTC) amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with SiO2 as an etch-stop-layer (ESL) deposited by medium frequency physical vapor deposition (mf-PVD). The TFTs show field-effect mobility (μFE) of

  5. The effect of a SiO2 layer on the performance of a ZnO-based SAW device for high sensitivity biosensor applications

    International Nuclear Information System (INIS)

    Chen, Xi; Liu, Dali; Chen, Jiansheng; Wang, Guolei

    2009-01-01

    The properties of ZnO/SiO 2 /Si surface acoustic wave (SAW) love mode biosensors are studied in this paper. This specific structure is very suitable for biosensors since the reactive ZnO surface offers the opportunity for effective bio–ZnO interfaces, and the development of sensors directly on Si substrates provides the chance for full integration with read-out and signal processing circuitry in the mature Si technology. However, investigations of the dependence of buffer layer SiO 2 on the performance of biosensors are very few. Therefore, the main interest of this paper is to find the relation between the properties of biosensors and the SiO 2 layer. Some important results are obtained by solving the coupled electromechanical field equations. It is found that the mass loading sensitivity can be further improved by adding the SiO 2 layer; furthermore, the maximal sensitivity of the biosensors can be obtained by adjusting the thicknesses of the two layers. Accordingly, consideration of the buffer layer is very important in the optimization of devices. On the other hand, it is found that the thickness of the piezoelectric guiding layer has an evident effect on the electromechanical coupling coefficient, while that of the SiO 2 layer has a tiny effect on it. Moreover, we find that the effect of initial stresses on the properties of biosensors depends on the distribution of acoustic flow power in the two layers. This analysis is meaningful for the manufacture and applications of the ZnO/SiO 2 /Si structure love wave biosensor

  6. Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

    Science.gov (United States)

    van de Loo, B. W. H.; Ingenito, A.; Verheijen, M. A.; Isabella, O.; Zeman, M.; Kessels, W. M. M.

    2017-06-01

    Black silicon (b-Si) nanotextures can significantly enhance the light absorption of crystalline silicon solar cells. Nevertheless, for a successful application of b-Si textures in industrially relevant solar cell architectures, it is imperative that charge-carrier recombination at particularly highly n-type doped black Si surfaces is further suppressed. In this work, this issue is addressed through systematically studying lowly and highly doped b-Si surfaces, which are passivated by atomic-layer-deposited Al2O3 films or SiO2/Al2O3 stacks. In lowly doped b-Si textures, a very low surface recombination prefactor of 16 fA/cm2 was found after surface passivation by Al2O3. The excellent passivation was achieved after a dedicated wet-chemical treatment prior to surface passivation, which removed structural defects which resided below the b-Si surface. On highly n-type doped b-Si, the SiO2/Al2O3 stacks result in a considerable improvement in surface passivation compared to the Al2O3 single layers. The atomic-layer-deposited SiO2/Al2O3 stacks therefore provide a low-temperature, industrially viable passivation method, enabling the application of highly n- type doped b-Si nanotextures in industrial silicon solar cells.

  7. Band alignment of atomic layer deposited SiO2 and HfSiO4 with (\\bar{2}01) β-Ga2O3

    Science.gov (United States)

    Carey, Patrick H., IV; Ren, Fan; Hays, David C.; Gila, Brent P.; Pearton, Stephen J.; Jang, Soohwan; Kuramata, Akito

    2017-07-01

    The valence band offset at both SiO2/β-Ga2O3 and HfSiO4/β-Ga2O3 heterointerfaces was measured using X-ray photoelectron spectroscopy. Both dielectrics were deposited by atomic layer deposition (ALD) onto single-crystal β-Ga2O3. The bandgaps of the materials were determined by reflection electron energy loss spectroscopy as 4.6 eV for Ga2O3, 8.7 eV for Al2O3 and 7.0 eV for HfSiO4. The valence band offset was determined to be 1.23 ± 0.20 eV (straddling gap, type I alignment) for ALD SiO2 on β-Ga2O3 and 0.02 ± 0.003 eV (also type I alignment) for HfSiO4. The respective conduction band offsets were 2.87 ± 0.70 eV for ALD SiO2 and 2.38 ± 0.50 eV for HfSiO4, respectively.

  8. Structural and electronic properties of the transition layer at the SiO2/4H-SiC interface

    Directory of Open Access Journals (Sweden)

    Wenbo Li

    2015-01-01

    Full Text Available Using first-principles methods, we generate an amorphous SiO2/4H-SiC interface with a transition layer. Based this interface model, we investigate the structural and electronic properties of the interfacial transition layer. The calculated Si 2p core-level shifts for this interface are comparable to the experimental data, indicating that various SiCxOy species should be present in this interface transition layer. The analysis of the electronic structures reveals that the tetrahedral SiCxOy structures cannot introduce any of the defect states at the interface. Interestingly, our transition layer also includes a C-C=C trimer and SiO5 configurations, which lead to the generation of interface states. The accurate positions of Kohn-Sham energy levels associated with these defects are further calculated within the hybrid functional scheme. The Kohn-Sham energy levels of the carbon trimer and SiO5 configurations are located near the conduction and valence band of bulk 4H-SiC, respectively. The result indicates that the carbon trimer occurred in the transition layer may be a possible origin of near interface traps. These findings provide novel insight into the structural and electronic properties of the realistic SiO2/SiC interface.

  9. High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.

    Science.gov (United States)

    Guo, Hao; Zhang, Xiong; Chen, Hongjun; Zhang, Peiyuan; Liu, Honggang; Chang, Hudong; Zhao, Wei; Liao, Qinghua; Cui, Yiping

    2013-09-09

    GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with patterned composite SiO(2)/Al(2)O(3) passivation layers and TiO(2)/Al(2)O(3) distributed Bragg reflector (DBR) backside reflector have been proposed and fabricated. Highly passivated Al(2)O(3) layer deposited on indium tin oxide (ITO) layer with excellent uniformity and quality has been achieved with atomic layer deposition (ALD) technology. With a 60 mA current injection, an enhancement of 21.6%, 59.7%, and 63.4% in the light output power (LOP) at 460 nm wavelength was realized for the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers, the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers and Ag mirror + 3-pair TiO(2)/SiO(2) DBR backside reflector, and the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layer and Ag mirror + 3-pair ALD-grown TiO(2)/Al(2)O(3) DBR backside reflector as compared with the conventional LED only with a single SiO(2) passivation layer, respectively.

  10. Characterization of Ultra thin chromium layers deposited ou to SiO2 using the Le-PIXE and the RB S techniques

    International Nuclear Information System (INIS)

    Zahraman, K.; Nsouli, B.; Roumie, M.

    2007-01-01

    In this paper, we demonstrate the ability of the Le-PIXE (Low Energy PIXE) technique, using proton energies < 1 MeV, for the monitoring of the thickness and the thickness uniformity of ultra thin (0.5 nm < t < 20 nm) chromium layers deposited onto quartz substrates. Chromium is a good candidate for obtaining conductive ultra thin layers on insulator substrates such as quartz (SiO2). The resistivity of such layers is highly related to the quality of the deposited chromium film. In order to optimize the deposition process, there is a need for rapid and accurate monitoring of such films (film thickness, thickness uniformity over a big surface...). The acquisition time needed to obtain results with less than 3-4 % precision was 5 minutes for the thinnest layers. The validation for the use of the Le-PIXE technique was checked by means of conventional RB S technique.

  11. Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion

    Directory of Open Access Journals (Sweden)

    B. Pivac

    2018-01-01

    Full Text Available The annealing behavior of very thin SiO2/Ge multilayers deposited on Si substrate by e-gun deposition in high vacuum was explored. It is shown that, after annealing at moderate temperatures (800°C in inert atmosphere, Ge is completely outdiffused from the SiO2 matrix leaving small (about 3 nm spherical voids embedded in the SiO2 matrix. These voids are very well correlated and formed at distances governed by the preexisting multilayer structure (in vertical direction and self-organization (in horizontal direction. The formed films produce intensive photoluminescence (PL with a peak at 500 nm. The explored dynamics of the PL decay show the existence of a very rapid process similar to the one found at Ge/SiO2 defected interface layers.

  12. Effect of interfacial SiO2- y layer and defect in HfO2- x film on flat-band voltage of HfO2- x /SiO2- y stacks for backside-illuminated CMOS image sensors

    Science.gov (United States)

    Na, Heedo; Lee, Jimin; Jeong, Juyoung; Kim, Taeho; Sohn, Hyunchul

    2018-03-01

    In this study, the effect of oxygen gas fraction during deposition of a hafnium oxide (HfO2- x ) film and the influence of the quality of the SiO2- y interlayer on the nature of flat-band voltage ( V fb) in TiN/HfO/SiO2- y /p-Si structures were investigated. X-ray photoemission spectroscopy analysis showed that the non-lattice oxygen peak, indicating an existing oxygen vacancy, increased as the oxygen gas fraction decreased during sputtering. From C- V and J- E analyses, the V fb behavior was significantly affected by the characteristics of the SiO2- y interlayer and the non-lattice oxygen fraction in the HfO2- x films. The HfO2- x /native SiO2- y stack presented a V fb of - 1.01 V for HfO2- x films with an oxygen gas fraction of 5% during sputtering. Additionally, the V fb of the HfO2- x /native SiO2- y stack could be controlled from - 1.01 to - 0.56 V by changing the deposition conditions of the HfO2- x film with the native SiO2- y interlayer. The findings of this study can be useful to fabricate charge-accumulating layers for backside-illuminated image sensor devices.

  13. Ta2O5/ Al2O3/ SiO2 - antireflective coating for non-planar optical surfaces by atomic layer deposition

    Science.gov (United States)

    Pfeiffer, K.; Schulz, U.; Tünnermann, A.; Szeghalmi, A.

    2017-02-01

    Antireflective coatings are essential to improve transmittance of optical elements. Most research and development of AR coatings has been reported on a wide variety of plane optical surfaces; however, antireflection is also necessary on nonplanar optical surfaces. Physical vapor deposition (PVD), a common method for optical coatings, often results in thickness gradients on strongly curved surfaces, leading to a failure of the desired optical function. In this work, optical thin films of tantalum pentoxide, aluminum oxide and silicon dioxide were prepared by atomic layer deposition (ALD), which is based on self-limiting surface reactions. The results demonstrate that ALD optical layers can be deposited on both vertical and horizontal substrate surfaces with uniform thicknesses and the same optical properties. A Ta2O5/Al2O3/ SiO2 multilayer AR coating (400-700 nm) was successfully applied to a curved aspheric glass lens with a diameter of 50 mm and a center thickness of 25 mm.

  14. Electromagnetic modeling of waveguide amplifier based on Nd3+ Si-rich SiO2 layers by means of the ADE-FDTD method

    Directory of Open Access Journals (Sweden)

    Dufour Christian

    2011-01-01

    Full Text Available Abstract By means of ADE-FDTD method, this paper investigates the electromagnetic modelling of a rib-loaded waveguide composed of a Nd3+ doped Silicon Rich Silicon Oxide active layer sandwiched between a SiO2 bottom cladding and a SiO2 rib. The Auxilliary Differential Equations are the rate equations which govern the levels populations. The Finite Difference Time Domain (FDTD scheme is used to solve the space and time dependent Maxwell equations which describe the electromagnetic field in a copropagating scheme of both pumping (λ pump = 488 nm and signal (λ signal = 1064 nm waves. Such systems are characterized by extremely different specific times such as the period of electromagnetic field ~ 10-15 s and the lifetimes of the electronic levels between ~ 10-10s and ~ 10-4 s. The time scaling method is used in addition to specific initial conditions in order to decrease the computational time. We show maps of the Poynting vector along the propagation direction as a function of the silicon nanograin (Si-ng concentrations. A threshold value of 1024 Si-ng m-3 is extracted below which the pump wave can propagate so that a signal amplication is possible.

  15. Electromagnetic modeling of waveguide amplifier based on Nd3+ Si-rich SiO2 layers by means of the ADE-FDTD method.

    Science.gov (United States)

    Dufour, Christian; Cardin, Julien; Debieu, Olivier; Fafin, Alexandre; Gourbilleau, Fabrice

    2011-04-04

    By means of ADE-FDTD method, this paper investigates the electromagnetic modelling of a rib-loaded waveguide composed of a Nd3+ doped Silicon Rich Silicon Oxide active layer sandwiched between a SiO2 bottom cladding and a SiO2 rib. The Auxilliary Differential Equations are the rate equations which govern the levels populations. The Finite Difference Time Domain (FDTD) scheme is used to solve the space and time dependent Maxwell equations which describe the electromagnetic field in a copropagating scheme of both pumping (λpump = 488 nm) and signal (λsignal = 1064 nm) waves. Such systems are characterized by extremely different specific times such as the period of electromagnetic field ~ 10-15 s and the lifetimes of the electronic levels between ~ 10-10s and ~ 10-4 s. The time scaling method is used in addition to specific initial conditions in order to decrease the computational time. We show maps of the Poynting vector along the propagation direction as a function of the silicon nanograin (Si-ng) concentrations. A threshold value of 1024 Si-ng m-3 is extracted below which the pump wave can propagate so that a signal amplication is possible.

  16. Effect of SiO2 passivation overlayers on hillock formation in Al thin films

    International Nuclear Information System (INIS)

    Kim, Deok-kee

    2012-01-01

    Hillock formation in Al thin films with varying thicknesses of SiO 2 as a passivation layer was investigated during thermal cycling. Based on the stress measurements and the number of hillocks, 250 nm thick SiO 2 was thick enough to suppress the hillock formation and the suppression of hillock at 250 nm passivation and the lack of suppression at thinner passivation is related to the presence/absence of protection against the diffusive flow of atoms from the surrounding area to the surface due to the biaxial compressive stresses present in the film through the weak spots in the passivation layer. The stress state of Al films measured during annealing (the driving force for hillock formation) did not vary much with SiO 2 thickness. A small number of hillocks formed during the plasma enhanced chemical vapor deposition of SiO 2 overlayers at 300 °C. - Highlights: ► We examined the effect of SiO 2 overlayers on hillock formation in Al thin films. ► Thin overlayers were not effective in suppressing diffusive flow to the surface. ► A thick overlayer suppressed the diffusive flow from the interior to the surface. ► The stress state of Al films did not vary much with SiO 2 passivation thickness. ► High mechanical strength provided a large driving force for the large grain growth.

  17. SiO 2 /TiO 2 multi-layered thin films with self-cleaning and enhanced ...

    Indian Academy of Sciences (India)

    The crystallinity, morphology and surface energy were correlated with the optical ... layers, the photocatalytic efficiency reaches 40% under simulated solar radiation. ... RTD Center Renewable Energy Systems and Recycling, Transilvania ...

  18. Atomic layer deposition and post-growth thermal annealing of ultrathin MoO3 layers on silicon substrates: Formation of surface nanostructures

    Science.gov (United States)

    Liu, Hongfei; Yang, Ren Bin; Yang, Weifeng; Jin, Yunjiang; Lee, Coryl J. J.

    2018-05-01

    Ultrathin MoO3 layers have been grown on Si substrates at 120 °C by atomic layer deposition (ALD) using molybdenum hexacarbonyl [Mo(CO)6] and ozone (O3) as the Mo- and O-source precursors, respectively. The ultrathin films were further annealed in air at Tann = 550-750 °C for 15 min. Scanning-electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy have been employed to evaluate the morphological and elemental properties as well as their evolutions upon annealing of the thin films. They revealed an interfacial SiOx layer in between the MoO3 layer and the Si substrate; this SiOx layer converted into SiO2 during the annealing; and the equivalent thickness of the MoO3 (SiO2) layer decreased (increased) with the increase in Tann. Particles with diameters smaller than 50 nm emerged at Tann = 550 °C and their sizes (density) were reduced (increased) by increasing Tann to 650 °C. A further increase of Tann to 750 °C resulted in telephone-cord-like MoO3 structures, initiated from isolated particles on the surface. These observations have been discussed and interpreted based on temperature-dependent atomic interdiffusions, surface evaporations, and/or melting of MoO3, which shed new light on ALD MoO3 towards its electronic applications.

  19. Structural and photoluminescence properties of ZrO2:Eu3+ SiO2 nanophosphors as a function of annealing temperature

    International Nuclear Information System (INIS)

    Parma, Alvise; Freris, Isidora; Riello, Pietro; Enrichi, Francesco; Cristofori, Davide; Benedetti, Alvise

    2010-01-01

    The synthesis, morphology and luminescence properties of two systems comprising luminescent Eu 3+ -doped zirconium oxide nanocrystals embedded in an amorphous silica matrix are reported. The two systems, prepared with the same overall wt% composition of silica (75%) and Eu x Zr (1-x) O (2-x/2) solid solution (25%), have been annealed in the range 135-1000 o C and subsequently functionalized with (3-aminopropyl)triethoxysilane. Detailed X-ray diffraction analyses and transmission electron micrographs, combined with infrared spectroscopy and luminescence spectroscopy data, have been used to demonstrate the influence of annealing temperature on the: (i) nanostructure, (ii) luminescence properties and (iii) availability of superficial -OH groups for efficient surface functionalization. The optimum calcination temperature was found to be 700 o C for each series in terms of luminescence lifetime efficiency and post-functionalization efficiency with (3-aminopropyl)triethoxysilane.

  20. Resonant tunneling with high peak to valley current ratio in SiO2/nc-Si/SiO2 multi-layers at room temperature

    International Nuclear Information System (INIS)

    Chen, D. Y.; Sun, Y.; He, Y. J.; Xu, L.; Xu, J.

    2014-01-01

    We have investigated carrier transport in SiO 2 /nc-Si/SiO 2 multi-layers by room temperature current-voltage measurements. Resonant tunneling signatures accompanied by current peaks are observed. Carrier transport in the multi-layers were analyzed by plots of ln(I/V 2 ) as a function of 1/V and ln(I) as a function of V 1/2 . Results suggest that besides films quality, nc-Si and barrier sub-layer thicknesses are important parameters that restrict carrier transport. When thicknesses are both small, direct tunneling dominates carrier transport, resonant tunneling occurs only at certain voltages and multi-resonant tunneling related current peaks can be observed but with peak to valley current ratio (PVCR) values smaller than 1.5. When barrier thickness is increased, trap-related and even high field related tunneling is excited, causing that multi-current peaks cannot be observed clearly, only one current peak with higher PVCR value of 7.7 can be observed. While if the thickness of nc-Si is large enough, quantum confinement is not so strong, a broad current peak with PVCR value as high as 60 can be measured, which may be due to small energy difference between the splitting energy levels in the quantum dots of nc-Si. Size distribution in a wide range may cause un-controllability of the peak voltages

  1. Study of annealing effect on the growth of ZnO nanorods on ZnO seed layers

    Science.gov (United States)

    Sannakashappanavar, Basavaraj S.; Pattanashetti, Nandini A.; Byrareddy, C. R.; Yadav, Aniruddh Bahadur

    2018-04-01

    A zinc oxide (ZnO) seed layer was deposited on the SiO2/Si substrate by RF sputtering. To study the effect of annealing, the seed layers were classified into annealed and unannealed thin films. Annealing of the seed layers was carried at 450°C. Surface morphology of the seed layers were studied by Atomic force microscopy. ZnO nanorods were then grown on both the types of seed layer by hydrothermal method. The morphology and the structural properties of the nanorods were characterized by X-ray diffraction and Scanning electron microscopy. The effect of seed layer annealing on the growth and orientation of the ZnO nanorods were clearly examined on comparing with the nanorods grown on unannealed seed layer. The nanorods grown on annealed seed layers were found to be well aligned and oriented. Further, the I-V characteristic study was carried out on these aligned nanorods. The results supports positively for the future work to further enhance the properties of developed nanorods for their wide applications in electronic and optoelectronic devices.

  2. On a two-layer Si_3N_4/SiO_2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Arutyunyan, S. S.; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V.

    2016-01-01

    The fabrication of a two-layer Si_3N_4/SiO_2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si_3N_4/SiO_2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  3. Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

    NARCIS (Netherlands)

    Nishiguchi, K.; Castellanos-Gomez, A.; Yamaguchi, H.; Fujiwara, A.; Van der Zant, H.S.J.; Steele, G.A.

    2015-01-01

    We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and

  4. van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

    Science.gov (United States)

    Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

    2018-03-01

    Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

  5. Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

    Science.gov (United States)

    Yu, Zhao; Bingfeng, Fan; Yiting, Chen; Yi, Zhuo; Zhoujun, Pang; Zhen, Liu; Gang, Wang

    2016-07-01

    We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. ).

  6. Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

    International Nuclear Information System (INIS)

    Zhao Yu; Fan Bingfeng; Chen Yiting; Zhuo Yi; Wang Gang; Pang Zhoujun; Liu Zhen

    2016-01-01

    We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO 2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO 2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. (paper)

  7. Role of the SiO2 buffer layer thickness in the formation of Si/SiO2/nc-Ge/SiO2 structures by dry oxidation

    International Nuclear Information System (INIS)

    Kling, A.; Ortiz, M.I.; Prieto, A.C.; Rodriguez, A.; Rodriguez, T.; Jimenez, J.; Ballesteros, C.; Soares, J.C.

    2006-01-01

    Nanomemories, containing Ge-nanoparticles in a SiO 2 matrix, can be produced by dry thermal oxidation of a SiGe layer deposited onto a Si-wafer with a barrier SiO 2 layer on its top. Rutherford backscattering spectrometry has been used to characterize the kinetics of the oxidation process, the composition profile of the growing oxide, the Ge-segregation and its diffusion into the barrier oxide in samples with thin and thick barrier oxide layers. The Ge segregated during the oxidation of the SiGe layer diffuses into the barrier oxide. In the first case the diffusion through the thin oxide is enhanced by the proximity of the substrate that acts as a sink for the Ge, resulting in the formation of a low Ge concentration SiGe layer in the surface of the Si-wafer. In the second case, the Ge-diffusion progresses as slowly as in bulk SiO 2 . Since barrier oxide layers as thin as possible are favoured for device fabrication, the structures should be oxidized at lower temperatures and the initial SiGe layer thickness reduced to minimize the Ge-diffusion

  8. Positron trap centers in x-ray and γ-ray irradiated SiO2

    International Nuclear Information System (INIS)

    Khatri, R.; Asoka-Kumar, P.; Nielsen, B.; Roellig, L.O.; Lynn, K.G.

    1993-01-01

    Using Doppler broadening annihilation spectroscopy, we investigated the properties of irradiated samples of SiO 2 /Si(100) with 117 nm thick oxide layer, grown in dry O 2 on p- and n-type substrates. These samples were irradiated with γ rays and x rays at doses in the range of 7x10 4 --9x10 6 rad and 50--2000 mJ/cm 2 , respectively. The changes observed in the Doppler broadening line shape parameter after irradiation and its recovery during isochronal annealing were used to obtain an activation energy of 1.48--1.61 eV required for annealing the defects

  9. Chemical and morphological modifications of single layer graphene submitted to annealing in water vapor

    Science.gov (United States)

    Rolim, Guilherme Koszeniewski; Corrêa, Silma Alberton; Galves, Lauren Aranha; Lopes, João Marcelo J.; Soares, Gabriel Vieira; Radtke, Cláudio

    2018-01-01

    Modifications of single layer graphene transferred to SiO2/Si substrates resulting from annealing in water vapor were investigated. Near edge X-ray absorption fine structure spectroscopy evidenced graphene puckering between 400 and 500 °C. Synchrotron radiation based X-ray photoelectron spectroscopy showed variation of sp2 and sp3C bonding configurations specially in this same temperature range. Moreover, oxygen related functionalities are formed as a result of water vapor annealing. Based on these results and complementary Raman and nuclear reaction analysis, one distinguishes three different regimes of water interaction with graphene concerning modifications of the graphene layer. In the low temperature range (200-400 °C), no prominent modification of graphene itself is observed. At higher temperatures (400-500 °C), to accommodate newly formed oxygen functionalities, the flat and continuous sp2 bonding network of graphene is disrupted, giving rise to a puckered layer. For 600 °C and above, shrinking of graphene domains and a higher doping level take place.

  10. Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

    Directory of Open Access Journals (Sweden)

    Jiongjiong Mo

    2017-01-01

    Full Text Available The total ionizing dose irradiation effects are investigated in Si vertical diffused MOSFETs (VDMOSs with different gate dielectrics including single SiO2 layer and double Si3N4/SiO2 layer. Radiation-induced holes trapping is greater for single SiO2 layer than for double Si3N4/SiO2 layer. Dielectric oxidation temperature dependent TID effects are also studied. Holes trapping induced negative threshold voltage shift is smaller for SiO2 at lower oxidation temperature. Gate bias during irradiation leads to different VTH shift for different gate dielectrics. Single SiO2 layer shows the worst negative VTH at VG=0 V, while double Si3N4/SiO2 shows negative VTH shift at VG=-5 V, positive VTH shift at VG=10 V, and negligible VTH shift at VG=0 V.

  11. Slow positron studies of hydrogen activation/passivation on SiO2/Si(100) interfaces

    International Nuclear Information System (INIS)

    Lynn, K.G.; Asoka-Kumar, P.

    1991-01-01

    The hydrogen atoms are one of the most common impurity species found in semiconductor systems owing to its large diffusivity, and are easily incorporated either in a controlled process like in ion implantation or in an uncontrolled process like the one at the fabrication stage. Hydrogen can passivate dangling bonds and dislocations in these systems and hence can be used to enhance the electrical properties. In a SiO 2 /Si system, hydrogen can passivate electronic states at the interface and can alter the fixed or mobile charges in the oxide layer. Since hydrogen is present in almost all of the environments of SiO 2 /Si wafer fabrication, the activation energy of hydrogen atoms is of paramount importance to a proper understanding of SiO 2 /Si based devices and has not been measured on the technologically most important Si(100) face. There are no direct, nondestructive methods available to observe hydrogen injection into the oxide layer and subsequent diffusion. This study uses the positrons as a ''sensitive'', nondestructive probe to observe hydrogen interaction in the oxide layer and the interface region. We also describe a new way of characterizing the changes in the density of the interface states under a low-temperature annealing using positrons. 9 refs., 6 figs

  12. Slow positron studies of hydrogen activation/passivation on SiO2/Si(100) interfaces

    Science.gov (United States)

    Lynn, K. G.; Asoka-Kumar, P.

    The hydrogen atoms are one of the most common impurity species found in semiconductor systems owing to its large diffusivity, and are easily incorporated either in a controlled process like in ion implantation or in an uncontrolled process like the one at the fabrication stage. Hydrogen can passivate dangling bonds and dislocations in these systems and hence can be used to enhance the electrical properties. In a SiO2/Si system, hydrogen can passivate electronic states at the interface and can alter the fixed or mobile charges in the oxide layer. Since hydrogen is present in almost all of the environments of SiO2/Si wafer fabrication, the activation energy of hydrogen atoms is of paramount importance to a proper understanding of SiO2/Si based devices and has not been measured on the technologically most important Si(100) face. There are no direct, nondestructive methods available to observe hydrogen injection into the oxide layer and subsequent diffusion. The positrons are used as a 'sensitive', nondestructive probe to observe hydrogen interaction in the oxide layer and the interface region. A new way is described of characterizing the changes in the density of the interface states under a low temperature annealing using positrons.

  13. Rapid Thermal annealing of silicon layers amorphized by ion implantation

    International Nuclear Information System (INIS)

    Hasenack, C.M.

    1986-01-01

    The recrystallization behavior and the supression mechanisms of the residual defects of silicon layers amorphized by ion implantation, were investigated. The samples were annealed with the aid of a rapid thermal annealing (RTA) system at temperature range from 850 to 1200 0 C, and annealing time up to 120 s. Random and aligned Rutherford backscattering spectroscopy were used to analyse the samples. Similarities in the recrystallization behavior for layers implanted with ions of the same chemical groups such as As or Sb; Ge, Sn or Pb, In or Ga, are observed. The results show that the effective supression of resisual defects of the recrystallired layers is vinculated to the redistribution of impurities via thermal diffusion. (author) [pt

  14. Thermal response of Ru electrodes in contact with SiO2 and Hf-based high-k gate dielectrics

    International Nuclear Information System (INIS)

    Wen, H.-C.; Lysaght, P.; Alshareef, H.N.; Huffman, C.; Harris, H.R.; Choi, K.; Senzaki, Y.; Luan, H.; Majhi, P.; Lee, B.H.; Campin, M. J.; Foran, B.; Lian, G.D.; Kwong, D.-L.

    2005-01-01

    A systematic experimental evaluation of the thermal stability of Ru metal gate electrodes in direct contact with SiO 2 and Hf-based dielectric layers was performed and correlated with electrical device measurements. The distinctly different interfacial reactions in the Ru/SiO 2 , Ru/HfO 2 , and Ru/HfSiO x film systems were observed through cross-sectional high-resolution transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy with electron-energy-loss spectra, and energy dispersive x-ray spectra analysis. Ru interacted with SiO 2 , but remained stable on HfO 2 at 1000 deg. C. The onset of Ru/SiO 2 interfacial interactions is identified via silicon substrate pitting possibly from Ru diffusion into the dielectric in samples exposed to a 900 deg. C/10-s anneal. The dependence of capacitor device degradation with decreasing SiO 2 thickness suggests Ru diffuses through SiO 2 , followed by an abrupt, rapid, nonuniform interaction of ruthenium silicide as Ru contacts the Si substrate. Local interdiffusion detected on Ru/HfSiO x samples may be due to phase separation of HfSiO x into HfO 2 grains within a SiO 2 matrix, suggesting that SiO 2 provides a diffusion pathway for Ru. Detailed evidence consistent with a dual reaction mechanism for the Ru/SiO 2 system at 1000 deg. C is presented

  15. Preparation & characterization of SiO2 interface layer by dip coating technique on carbon fibre for Cf/SiC composites

    Science.gov (United States)

    Kumar, Kundan; Jariwala, C.; Pillai, R.; Chauhan, N.; Raole, P. M.

    2015-08-01

    Carbon fibres (Cf) are one of the most important reinforced materials for ceramic matrix composites such as Cf - SiC composites and they are generally sought for high temperature applications in as space application, nuclear reactor and automobile industries. But the major problem arise when Cf reinforced composites exposed to high temperature in an oxidizing environment, Cf react with oxygen and burnt away. In present work, we have studied the effect of silica (SiO2) coating as a protective coating on Cf for the Cf / SiC composites. The silica solution prepared by the sol-gel process and coating on Cf is done by dip coating technique with varying the withdrawing speed i.e. 2, 5, 8 mm/s with fixed dipping cycle (3 Nos.). The uniform silica coating on the Cf is shown by the Scanning Electron Microscope (SEM) analysis. The tensile test shows the increase in tensile strength with respect to increase in withdrawing speed. The isothermal oxidation analysis confirmed enhancement of oxidation resistance of silica coated Cf as compared tothe uncoated Cf.

  16. Photocatalytic Property of Fe3O4/SiO2/TiO2 Core-Shell Nanoparticle with Different Functional Layer Thicknesses

    Directory of Open Access Journals (Sweden)

    Junyang Li

    2014-01-01

    Full Text Available This study examined the different properties of Fe3O4/SiO2/TiO2 (FST core-shell nanoparticles encapsulated for one to five different times, represented as FST1 to FST5, respectively. These FST nanoparticles were obtained using the carbon reduction and sol-gel methods, and their properties were characterized by various tools, such as scanning electron microscopy, transmission electron microscopy, X-ray diffraction, vibratory sample magnetometer, laser granularity apparatus, and specific surface area analyzer. The relationship between irradiation time and decoloration ratio indicates that FST2 demonstrated significant efficiency in the decolorization of methyl orange (MO under UV light. Further study on recycle activity showed that FST2 had a high decoloration rate after four cycles of photocatalysis, and its degradation of MO was well aligned with the apparent first-order kinetic equation. Furthermore, FST2 exhibited the highest apparent rate in the first cycle. All these results demonstrate that the recoverable FST2 possessed excellent photocatalytic activity while maintaining outstanding stability for further applications, such as managing environmental pollution.

  17. Synthesis and characterization of 64SiO2-26CaO-5P2O5-5CuO bioactive composition for the growth of hydroxyapatite layer by XRD, Raman and pH studies

    Science.gov (United States)

    Kaur, Pardeep; Singh, K. J.

    2016-05-01

    Bioactive sample with the nominal composition of 64SiO2-26CaO-5P2O5-5CuO has been prepared in the laboratory by using the sol-gel technique. The bioactivity of the prepared sample has been analyzed by using the Tris Simulated Body Fluid which has also been prepared in the laboratory. XRD and Raman techniques have been employedto probe the formation of hydroxyapatite layer. pH studies has also been undertaken to check the acidic/non-acidic behavior of sample. Growth of hydroxyapatite layer has been observed after one day on the surface of the sample. Moreover, sample has been observed to be non-acidic in nature.

  18. Effect of Al and Mg Contents on Wettability and Reactivity of Molten Zn-Al-Mg Alloys on Steel Sheets Covered with MnO and SiO2 Layers

    Science.gov (United States)

    Huh, Joo-Youl; Hwang, Min-Je; Shim, Seung-Woo; Kim, Tae-Chul; Kim, Jong-Sang

    2018-05-01

    The reactive wetting behaviors of molten Zn-Al-Mg alloys on MnO- and amorphous (a-) SiO2-covered steel sheets were investigated by the sessile drop method, as a function of the Al and Mg contents in the alloys. The sessile drop tests were carried out at 460 °C and the variation in the contact angles (θc) of alloys containing 0.2-2.5 wt% Al and 0-3.0 wt% Mg was monitored for 20 s. For all the alloys, the MnO-covered steel substrate exhibited reactive wetting whereas the a-SiO2-covered steel exhibited nonreactive, nonwetting (θc > 90°) behavior. The MnO layer was rapidly removed by Al and Mg contained in the alloys. The wetting of the MnO-covered steel sheet significantly improved upon increasing the Mg content but decreased upon increasing the Al content, indicating that the surface tension of the alloy droplet is the main factor controlling its wettability. Although the reactions of Al and Mg in molten alloys with the a-SiO2 layer were found to be sluggish, the wettability of Zn-Al-Mg alloys on the a-SiO2 layer improved upon increasing the Al and Mg contents. These results suggest that the wetting of advanced high-strength steel sheets, the surface oxide layer of which consists of a mixture of MnO and SiO2, with Zn-Al-Mg alloys could be most effectively improved by increasing the Mg content of the alloys.

  19. Structural transformation of implanted diamond layers during high temperature annealing

    International Nuclear Information System (INIS)

    Rubanov, S.; Fairchild, B.A.; Suvorova, A.; Olivero, P.; Prawer, S.

    2015-01-01

    In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond–air interface. The real quality of this interface could depend on degree of graphitization of the amorphous damage layers after annealing. In the present work the graphitization process was studied using conventional and analytical TEM. It was found that annealing at 550 °C results in a partial graphitization of the implanted volume with formation of the nano-crystalline graphitic phase sandwiched between layers of tetrahedral amorphous carbon. Annealing at 1400 °C resulted in complete graphitization of the amorphous layers. The average size of graphite nano-crystals did not exceed 5 nm with predominant orientation of c-planes normal to the sample surface.

  20. Contribution to implanted silicon layers and their annealing

    International Nuclear Information System (INIS)

    Combasson, J.-L.

    1976-01-01

    Defects created by boron implantation in silicon have been characterized by measuring the diffusion coefficient during annealing. Implanted impurity distributions were calculated after analyzing the hypotheses relating to charged particle slowing down through matter. Profiles are predicted with a good accuracy, by replacing occasionally the electronic stopping law by an empirical law. The asymmetries predicted are generally observed but deviations may occur for crystalline targets, or when the ion is heavy with regard to the substrate (in the event the Thomas-Fermi potential is not yet valid due to the high impact parameters). When deviations are neglected, the displacement cascade from implantation is represented by a damage profile proportional to the distribution of the Frenkel pairs. The annealing of the implanted layers is characterized by three annealing stages. The first one (400 deg C-600 deg C) is imputed to divacancy annealing associated to the formation and migration of boron-vacancy complexes. The second one (500 deg C-650 deg C) is characterized by the Watkins replacement mechanism. At high temperatures, when the annealing duration is longer than that of precipitation, interstitial loops are dissolved, and the thermal diffusion of boron atoms involves the vacancy mechanism of thermal diffusion [fr

  1. Synthesis and Characterization of SiO2@Y2MoO6:Eu3+ Core-Shell Structured Spherical Phosphors by Sol-Gel Process.

    Science.gov (United States)

    Li, G Z; Liu, F H; Chu, Z S; Wu, D M; Yang, L B; Li, J L; Wang, M N; Wang, Z L

    2016-04-01

    SiO2@Y2MoO6:Eu3+ core-shell phosphors were prepared by the sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectra (EDS), transmission electron microscopy (TEM), photoluminescence (PL) spectra as well as kinetic decays were used to characterize the resulting SiO2@Y2MoO6:Eu3+ core-shell phosphors. The XRD results demonstrated that the Y2MoO6:Eu3+ layers on the SiO2 spheres crystallized after being annealed at 700 °C and the crystallinity increased with raising the annealing temperature. The obtained core-shell phosphors have spherical shape with narrow size distribution (average size ca. 640 nm), non-agglomeration, and smooth surface. The thickness of the Y2MoO6:Eu3+ shells on the SiO2 cores could be easily tailored by varying the number of deposition cycles (70 nm for four deposition cycles). The Eul+ shows a strong PL emission (dominated by 5D0-7F2 red emission at 614 nm) under the excitation of 347 nm UV light. The PL intensity of Eu3+ increases with increasing the annealing temperature and the number of coating cycles.

  2. Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion

    OpenAIRE

    B. Pivac; P. Dubček; J. Dasović; H. Zorc; S. Bernstorff; J. Zavašnik; B. Vlahovic

    2018-01-01

    The annealing behavior of very thin SiO2/Ge multilayers deposited on Si substrate by e-gun deposition in high vacuum was explored. It is shown that, after annealing at moderate temperatures (800°C) in inert atmosphere, Ge is completely outdiffused from the SiO2 matrix leaving small (about 3 nm) spherical voids embedded in the SiO2 matrix. These voids are very well correlated and formed at distances governed by the preexisting multilayer structure (in vertical direction) and self-organization ...

  3. Ge nanocrystals embedded in ultrathin Si3N4 multilayers with SiO2 barriers

    Science.gov (United States)

    Bahariqushchi, R.; Gundogdu, Sinan; Aydinli, A.

    2017-04-01

    Multilayers of germanium nanocrystals (NCs) embedded in thin films of silicon nitride matrix separated with SiO2 barriers have been fabricated using plasma enhanced chemical vapor deposition (PECVD). SiGeN/SiO2 alternating bilayers have been grown on quartz and Si substrates followed by post annealing in Ar ambient from 600 to 900 °C. High resolution transmission electron microscopy (HRTEM) as well as Raman spectroscopy show good crystallinity of Ge confined to SiGeN layers in samples annealed at 900 °C. Strong compressive stress for SiGeN/SiO2 structures were observed through Raman spectroscopy. Size, as well as NC-NC distance were controlled along the growth direction for multilayer samples by varying the thickness of bilayers. Visible photoluminescence (PL) at 2.3 and 3.1 eV with NC size dependent intensity is observed and possible origin of PL is discussed.

  4. Structural and optical characterization of Mn doped ZnS nanocrystals elaborated by ion implantation in SiO2

    International Nuclear Information System (INIS)

    Bonafos, C.; Garrido, B.; Lopez, M.; Romano-Rodriguez, A.; Gonzalez-Varona, O.; Perez-Rodriguez, A.; Morante, J.R.; Rodriguez, R.

    1999-01-01

    Mn doped ZnS nanocrystals have been formed in SiO 2 layers by ion implantation and thermal annealing. The structural analysis of the processed samples has been performed mainly by Secondary Ion Mass Spectroscopy (SIMS) and Transmission Electron Microscopy (TEM). The data show the precipitation of ZnS nanocrystals self-organized into two layers parallel to the free surface. First results of the optical analysis of samples co-implanted with Mn show the presence of a yellow-green photoluminescence depending on the Mn concentration and the size of the nanocrystals, suggesting the doping with Mn of some precipitates

  5. Preliminary study in development of glass-ceramic based on SiO2-LiO2 system, starting of different SiO2 starting powders

    International Nuclear Information System (INIS)

    Daguano, J.K.M.F.; Santos, F.A.; Santos, C.; Marton, L.F.M.; Conte, R.A.; Rodrigues Junior, D.; Melo, F.C.L.

    2009-01-01

    In this work, lithium disilicate glass-ceramics were developed starting of the rice ash- SiO 2 and Li 2 CO 3 powders. The results were compared with glass ceramics based on the lithium disilicate obtained by commercial SiO 2 powders. Glass were melted at 1580 deg C, and annealed at 850 deg C. X-Ray diffraction and scanning electron microscopy were used for characterization of the materials, and hardness and fracture toughness were evaluated using Vickers indentation method. Glasses with amorphous structure were obtained in both materials. After annealing, 'rice-ash' samples presented Li 2 SiO 3 and residual SiO 2 as crystalline phases. On the other side, commercial SiO 2 - Samples presented only Li 2 Si 2 O 5 as crystalline phases and the better results of hardness and fracture toughness. (author)

  6. Photoemission study on electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces

    International Nuclear Information System (INIS)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2017-01-01

    Electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces have been investigated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. From the analysis of the cut-off energy for secondary photoelectrons measured at each thinning step of a dielectric layer by wet-chemical etching, an abrupt potential change caused by electrical dipole at SiO_2/Si and HfO_2/SiO_2 interfaces has been clearly detected. Al-gate MOS capacitors with thermally-grown SiO_2 and a HfO_2/SiO_2 dielectric stack were fabricated to evaluate the Al work function from the flat band voltage shift of capacitance-voltage (C-V) characteristics. Comparing the results of XPS and C-V measurements, we have verified that electrical dipole formed at the interface can be directly measured by photoemission measurements. (author)

  7. Investigation of SiO2 thin films dielectric constant using ellipsometry technique

    Directory of Open Access Journals (Sweden)

    P Sangpour

    2014-11-01

    Full Text Available In this paper, we studied the optical behavior of SiO2 thin films prepared via sol-gel route using spin coating deposition from tetraethylorthosilicate (TEOS as precursor. Thin films were annealed at different temperatures (400-600oC. Absorption edge and band gap of thin layers were measured using UV-Vis spectrophotometery. Optical refractive index and dielectric constant were measured by ellipsometry technique. Based on our atomic force microscopic (AFM and ellipsometry results, thin layers prepared through this method showed high surface area, and high porosity ranging between 4.9 and 16.9, low density 2 g/cm, and low dielectric constant. The dielectric constant and porosity of layers increased by increasing the temperature due to the changes in surface roughness and particle size.

  8. Modulating the size of ZnO nanorods on SiO2 substrates by incorporating reduced graphene oxide into the seed layer solution

    Directory of Open Access Journals (Sweden)

    Tzu-Yi Yu

    2017-06-01

    Full Text Available In this research, reduced graphene oxide was incorporated into the ZnO seed layer to modulate the rod diameter of ZnO nanorods (NRs during solgel/hydrothermal growth. To characterize the reduced graphene oxide incorporated ZnO NRs, multiple material analysis techniques including field-emission scanning electron microscopy, surface contact angle measurements, X-ray diffraction, and photoluminescence were used to explore distinct properties of these size modulatable NRs. Results indicate ZnO NRs with smaller diameters could be observed with more reduced graphene oxide added into the ZnO seed layer. Furthermore, better crystallinity, higher hydrophobicity and lower defect concentration could be obtained with more amount of reduced graphene oxide added into the ZnO seed layer. The modulatable reduced graphene oxide-incorporated ZnO NRs growth is promising for future ZnO NRs based nanodevice applications.

  9. Adsorption properties of BSA and DsRed proteins deposited on thin SiO2 layers: optically non-absorbing versus absorbing proteins

    Science.gov (United States)

    Scarangella, A.; Soumbo, M.; Villeneuve-Faure, C.; Mlayah, A.; Bonafos, C.; Monje, M.-C.; Roques, C.; Makasheva, K.

    2018-03-01

    Protein adsorption on solid surfaces is of interest for many industrial and biomedical applications, where it represents the conditioning step for micro-organism adhesion and biofilm formation. To understand the driving forces of such an interaction we focus in this paper on the investigation of the adsorption of bovine serum albumin (BSA) (optically non-absorbing, model protein) and DsRed (optically absorbing, naturally fluorescent protein) on silica surfaces. Specifically, we propose synthesis of thin protein layers by means of dip coating of the dielectric surface in protein solutions with different concentrations (0.01-5.0 g l-1). We employed spectroscopic ellipsometry as the most suitable and non-destructive technique for evaluation of the protein layers’ thickness and optical properties (refractive index and extinction coefficient) after dehydration, using two different optical models, Cauchy for BSA and Lorentz for DsRed. We demonstrate that the thickness, the optical properties and the wettability of the thin protein layers can be finely controlled by proper tuning of the protein concentration in the solution. These results are correlated with the thin layer morphology, investigated by AFM, FTIR and PL analyses. It is shown that the proteins do not undergo denaturation after dehydration on the silica surface. The proteins arrange themselves in a lace-like network for BSA and in a rod-like structure for DsRed to form mono- and multi-layers, due to different mechanisms driving the organization stage.

  10. Study of SiO2-Si and metal-oxide-semiconductor structures using positrons

    Science.gov (United States)

    Leung, T. C.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K. G.

    1993-01-01

    Studies of SiO2-Si and metal-oxide-semiconductor (MOS) structures using positrons are summarized and a concise picture of the present understanding of positrons in these systems is provided. Positron annihilation line-shape S data are presented as a function of the positron incident energy, gate voltage, and annealing, and are described with a diffusion-annihilation equation for positrons. The data are compared with electrical measurements. Distinct annihilation characteristics were observed at the SiO2-Si interface and have been studied as a function of bias voltage and annealing conditions. The shift of the centroid (peak) of γ-ray energy distributions in the depletion region of the MOS structures was studied as a function of positron energy and gate voltage, and the shifts are explained by the corresponding variations in the strength of the electric field and thickness of the depletion layer. The potential role of the positron annihilation technique as a noncontact, nondestructive, and depth-sensitive characterization tool for the technologically important, deeply buried interface is shown.

  11. Study of SiO2-Si and metal-oxide-semiconductor structures using positrons

    International Nuclear Information System (INIS)

    Leung, T.C.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K.G.

    1993-01-01

    Studies of SiO 2 -Si and metal-oxide-semiconductor (MOS) structures using positrons are summarized and a concise picture of the present understanding of positrons in these systems is provided. Positron annihilation line-shape S data are presented as a function of the positron incident energy, gate voltage, and annealing, and are described with a diffusion-annihilation equation for positrons. The data are compared with electrical measurements. Distinct annihilation characteristics were observed at the SiO 2 -Si interface and have been studied as a function of bias voltage and annealing conditions. The shift of the centroid (peak) of γ-ray energy distributions in the depletion region of the MOS structures was studied as a function of positron energy and gate voltage, and the shifts are explained by the corresponding variations in the strength of the electric field and thickness of the depletion layer. The potential role of the positron annihilation technique as a noncontact, nondestructive, and depth-sensitive characterization tool for the technologically important, deeply buried interface is shown

  12. In situ generation of highly dispersed metal nanoparticles on two-dimensional layered SiO2 by topotactic structure conversion and their superior catalytic activity

    Science.gov (United States)

    Chen, Zhe; Jia, Da-Shuang; Zhou, Yue; Hao, Jiang; Liang, Yu; Cui, Zhi-Min; Song, Wei-Guo

    2018-03-01

    Metal nanoparticles such as Ag, Cu and Fe are effective catalysts for many reactions, whereas a facile method to prepare metal nanoparticles with high uniformed dispersion is still desirable. Herein, the topotactic structure conversion of layered silicate, RUB-15, was utilized to support metal nanoparticles. Through simple ion-exchange and following calcination step, metal nanoparticles were generated in situ inside the interlayer space of layered silica, and the topotactic structure conversion process assured nano-sized and highly uniformed dispersion of metal nanoparticles. The obtained Ag/SiO2 composite showed superior catalytic activity for the reduction of 4-nitrophenol (4-NP) and methylene blue (MB), with a rate constant as high as 0.0607 s-1 and 0.0778 s-1. The simple and universal synthesis method as well as high activity of the product composite endow the strategy good application prospect.

  13. Estimation of silver nanoparticles size in SiO2 sol-gel layers by use of UV-VIS spectroscopy

    Directory of Open Access Journals (Sweden)

    Marek Novotný

    2011-12-01

    Full Text Available Silica glass layers containing silver nanoparticles were prepared by the sol-gel method. The layers were deposited on a glass substrate by the dip-coating method, dried and heat treated at various temperatures. The average silver particle size was determined from absorption spectra according to Mie’s theory. A good correlation was found between the calculated values and analysis of HRTEM images. A very narrow size distribution was obtained by this procedure. The average particle size of silver particles fell between 1 and 2 nm for dried samples; in case of glasses treated at 500 and 550°C the size ranged between 2 and 4 nm.

  14. Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

    International Nuclear Information System (INIS)

    Suvorova, N.A.; Lopez, C.M.; Irene, E.A.; Suvorova, A.A.; Saunders, M.

    2004-01-01

    (Ba,Sr)TiO 3 (BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO 2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO 2 on Si or 3.5 nm SiO 2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO 2 . Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density D it of an order of magnitude for oxidized Si substrates with a thicker SiO 2 underlayer. Further reduction of D it was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization

  15. Comparison of interfaces for (Ba,Sr)TiO3 films deposited on Si and SiO2/Si substrates

    Science.gov (United States)

    Suvorova, N. A.; Lopez, C. M.; Irene, E. A.; Suvorova, A. A.; Saunders, M.

    2004-03-01

    (Ba,Sr)TiO3(BST) thin films were deposited by ion sputtering on both bare and oxidized Si. Spectroscopic ellipsometry results have shown that a SiO2 underlayer of nearly the same thickness (2.6 nm in average) is found at the Si interface for BST sputter depositions onto nominally bare Si, 1 nm SiO2 on Si or 3.5 nm SiO2 on Si. This result was confirmed by high-resolution electron microscopy analysis of the films, and it is believed to be due to simultaneous subcutaneous oxidation of Si and reaction of the BST layer with SiO2. Using the conductance method, capacitance-voltage measurements show a decrease in the interface trap density Dit of an order of magnitude for oxidized Si substrates with a thicker SiO2 underlayer. Further reduction of Dit was achieved for the capacitors grown on oxidized Si and annealed in forming gas after metallization.

  16. Optical and non-optical characterization of Nb2O5-SiO2 compositional graded-index layers and rugate structures

    International Nuclear Information System (INIS)

    Leitel, Robert; Stenzel, Olaf; Wilbrandt, Steffen; Gaebler, Dieter; Janicki, Vesna; Kaiser, Norbert

    2006-01-01

    The deposition of graded-index layers and rugate structures was performed by coevaporation of silicon dioxide as the low index material and niobium pentoxide as the high index material. To obtain information about the composition depth profile of the films, we used cross-sectional transmission electron microscopy to supplement deposition rate data recorded by two independent crystal quartz monitors during film preparation. The concentration depth profile was transformed to a refractive index profile using the effective medium approximation. The thus obtained refractive index profiles turned out to represent efficient initial approximations for re-engineering purposes

  17. The growth of silica and silica-clad nanowires using a solid-state reaction mechanism on Ti, Ni and SiO2 layers

    International Nuclear Information System (INIS)

    Sharma, Parul; Anguita, J V; Stolojan, V; Henley, S J; Silva, S R P

    2010-01-01

    A large area compatible and solid-state process for growing silica nanowires is reported using nickel, titanium and silicon dioxide layers on silicon. The silica nanowires also contain silicon, as indicated by Raman spectroscopy. The phonon confinement model is employed to measure the diameter of the Si rich tail for our samples. The measured Raman peak shift and full width at half-maximum variation with the nanowire diameter qualitatively match with data available in the literature. We have investigated the effect of the seedbed structure on the nanowires, and the effect of using different gas conditions in the growth stages. From this, we have obtained the growth mechanism, and deduced the role of each individual substrate seedbed layer in the growth of the nanowires. We report a combined growth mechanism, where the growth is initiated by a solid-liquid-solid process, which is then followed by a vapour-liquid-solid process. We also report on the formation of two distinct structures of nanowires (type I and type II). The growth of these can be controlled by the use of titanium in the seedbed. We also observe that the diameter of the nanowires exhibits an inverse relation with the catalyst thickness.

  18. Excimer laser annealing of shallow As and B doped layers

    International Nuclear Information System (INIS)

    Monakhov, E.V.; Svensson, B.G.; Linnarsson, M.K.; Magna, A. La; Privitera, V.; Camalleri, M.; Fortunato, G.; Mariucci, L.

    2004-01-01

    Excimer laser annealing (ELA) of As-, B- and BF 2 -implanted Si has been studied by secondary ion mass spectrometry (SIMS), spreading resistance probe (SRP) and transmission electron microscopy (TEM). The implantations have been performed in the energy range from 1 to 30 keV with doses of 10 15 -10 16 cm -2 . ELA has been carried out with the energy densities in the range of 600-1200 mJ/cm 2 and the number of laser pulses from 1 to 10. It is shown that ELA results in a more uniform dopant distribution over the doped region with a more abrupt profile edge as compared to those after rapid thermal annealing (RTA). Besides, in contrast to RTA, ELA demonstrates a highly confined annealing effect, where the distribution of dopants below the melting region is not affected. SRP measurements demonstrate almost complete activation of the implanted dopants after ELA, and TEM does not reveal extended defects in the ELA-treated samples. The depth of the doped layers, abruptness of the profiles and the total doping dose as a function of ELA energy density and number of laser pulses are investigated. Computer simulations of ELA show a good agreement with the experimental data

  19. Effect of alkali earth oxides on hydroxy-carbonated apatite nano layer formation for SiO2-BaO-CaO-Na2O-P2O5 glass system

    Science.gov (United States)

    Kiran, P.; Ramakrishna, V.; Shashikala, H. D.; Udayashankar, N. K.

    2017-11-01

    Barium soda lime phosphosilicate [(58SiO2-(32 - x)BaO- xCao-6Na2O-4P2O5 (where x = 15, 20, 25 and 30 mol%)] samples were synthesised using conventional sol-gel method at 700 °C sintering temperature. Thermal, structural properties were studied using thermo gravimetric analysis and differential thermal analysis, X-ray diffraction, scanning electron microscopy, fourier transform infrared and Raman spectroscopy. Using Raman spectra non-bridging oxygen concentrations were estimated. The hydroxy-carbonated apatite (HCA) layer formation on samples was analysed for 7 days using simulated body fluid (SBF) soaked samples. The growth of HCA layers self-assembled on the sample surface was discussed as a function of NBO/BO ratio. Results indicated that the number of Ca2+ ions released into SBF solution in dissolution process and weight loss of SB-treated samples vary with NBO/BO ratio. The changes in NBO/BO ratios were observed to be proportional to HCA forming ability of barium soda lime phosphosilicate glasses.

  20. Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and SiO2

    International Nuclear Information System (INIS)

    Ershov, A. V.; Chugrov, I. A.; Tetelbaum, D. I.; Mashin, A. I.; Pavlov, D. A.; Nezhdanov, A. V.; Bobrov, A. I.; Grachev, D. A.

    2013-01-01

    The alternate vacuum evaporation of SiO and SiO 2 from separate sources is used to produce amorphous a-SiO x /SiO 2 multilayer nanoperiodic structures with periods of 5–10 nm and a number of layers of up to 64. The effect of annealing at temperatures T a = 500–1100°C on the structural and optical properties of the nanostructures is studied. The results of transmission electron microscopy of the samples annealed at 1100°C indicate the annealing-induced formation of vertically ordered quasiperiodic arrays of Si nanocrystals, whose dimensions are comparable to the a-SiO x -layer thickness in the initial nanostructures. The nanostructures annealed at 1100°C exhibit size-dependent photoluminescence in the wavelength range 750–830 nm corresponding to Si nanocrystals. The data on infrared absorption and Raman scattering show that the thermal evolution of structural and phase state of the SiO x layers with increasing annealing temperature proceeds through the formation of amorphous Si nanoinclusions with the subsequent formation and growth of Si nanocrystals.

  1. GeO2/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    Science.gov (United States)

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-01

    Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D2 constitute defect sites for D incorporation, analogous to defects at the SiO2/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D2 annealing, especially in the high temperature regime of the present study (>450 °C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO2/Si counterparts.

  2. Semiconductor nanocrystals formed in SiO2 by ion implantation

    International Nuclear Information System (INIS)

    Zhu, J.G.; White, C.W.; Budai, J.D.; Withrow, S.P.; Chen, Y.

    1994-11-01

    Nanocrystals of group IV (Si, Ge and SiGe), III-V (GaAs), and II-VI (CdSe) semiconductor materials have been fabricated inside SiO 2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystalline semiconductor materials has been studied by transmission electron microscopy (TEM). The nanocrystals form in near-spherical shape with random crystal orientations in amorphous SiO 2 . Extensive studies on the nanocrystal size distributions have been carried out for the Ge nanocrystals by changing the implantation doses and the annealing temperatures. Remarkable roughening of the nanocrystals occurs when the annealing temperature is raised over the melting temperature of the implanted semiconductor material. Strong red photoluminescence peaked around 1.67 eV has been achieved in samples with Si nanocrystals in SiO 2

  3. Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin-film transistors with a SiO2/SiNx/SiO2 buffer

    Science.gov (United States)

    Han, Ki-Lim; Ok, Kyung-Chul; Cho, Hyeon-Su; Oh, Saeroonter; Park, Jin-Seong

    2017-08-01

    We investigate the influence of the multi-layered buffer consisting of SiO2/SiNx/SiO2 on amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The multi-layered buffer inhibits permeation of water from flexible plastic substrates and prevents degradation of overlying organic layers. The a-IGZO TFTs with a multi-layered buffer suffer less positive bias temperature stress instability compared to the device with a single SiO2 buffer layer after annealing at 250 °C. Hydrogen from the SiNx layer diffuses into the active layer and reduces electron trapping at loosely bound oxygen defects near the SiO2/a-IGZO interface. Quantitative analysis shows that a hydrogen density of 1.85 × 1021 cm-3 is beneficial to reliability. However, the multi-layered buffer device annealed at 350 °C resulted in conductive characteristics due to the excess carrier concentration from the higher hydrogen density of 2.12 × 1021 cm-3.

  4. On-line packed magnetic in-tube solid phase microextraction of acidic drugs such as naproxen and indomethacin by using Fe3O4@SiO2@layered double hydroxide nanoparticles with high anion exchange capacity.

    Science.gov (United States)

    Shamsayei, Maryam; Yamini, Yadollah; Asiabi, Hamid; Safari, Meysam

    2018-02-22

    The authors describe a 3-component nanoparticle system composed of a silica-coated magnetite (Fe 3 O 4 ) core and a layered double (Cu-Cr) hydroxide nanoplatelet shell. The sorbent has a high anion exchange capacity for extraction anionic species. A simple online system, referred to as "on-line packed magnetic-in-tube solid phase microextraction" was designed. The nanoparticles were placed in a stainless steel cartridge via dry packing. The cartridge was then applied to the preconcentration acidic drugs including naproxen and indomethacin from urine and plasma. Extraction and desorption times, pH values of the sample solution and flow rates of sample solution and eluent were optimized. Analytes were then quantified by HPLC with UV detection. Under optimal conditions, the limits of detection range from 70 to 800 ng L -1 , with linear responses from 0.1-500 μg L -1 (water samples), 0.6-500 μg L -1 (spiked urine), and 0.9-500 μg L -1 (spiked plasma). The inter- and intra-assay precisions (RSDs, for n = 5) are in the range of 2.2-5.4%, 2.8-4.9%, and 2.0-5.2% at concentration levels of 5, 25 and 50 μg L -1 , respectively. The method was applied to the analysis of the drugs in spiked human urine and plasma, and good results were achieved. Graphical abstract Fe 3 O 4 @SiO 2 @CuCr-LDH magnetic nanoparticles were synthesized and packed in to a stainless steel column. The column was applied to solid phase microextraction of acidic drugs from biological samples.

  5. Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO as a pH sensitive layer for applications in field effect based sensors

    Directory of Open Access Journals (Sweden)

    Narendra Kumar

    2015-06-01

    Full Text Available The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO2/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 oC in N2 ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 oC. The increased pH sensitivity with the film annealed at 400 oC in N2 gas was attributed to the enhanced lattice oxygen ions (based on the XPS data and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 oC was attributed to defects in the films as well as the induced traps at the IGZO/SiO2 interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here used as the active layer in a thin film transistors (TFTs possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.

  6. A facile approach to fabricate Au nanoparticles loaded SiO2 microspheres for catalytic reduction of 4-nitrophenol

    International Nuclear Information System (INIS)

    Tang, Mingyi; Huang, Guanbo; Li, Xianxian; Pang, Xiaobo; Qiu, Haixia

    2015-01-01

    Hydrophilic and biocompatible macromolecules were used to improve and simplify the process for the fabrication of core/shell SiO 2 @Au composite particles. The influence of polymers on the morphology of SiO 2 @Au particles with different size of SiO 2 cores was analyzed by transmission electron microscopy and scanning electron microscopy. The optical property of the SiO 2 @Au particles was studied with UV–Vis spectroscopy. The results indicate that the structure and composition of macromolecules affect the morphology of Au layers on SiO 2 microspheres. The SiO 2 @Au particles prepared in the presence of polyvinyl alcohol (PVA) or polyvinylpyrrolidone (PVP) have thin and complete Au nanoshells owing to their inducing act in preferential growth of Au nanoparticles along the surface of SiO 2 microspheres. SiO 2 @Au particles can be also prepared from SiO 2 microspheres modified with 3-aminopropyltrimethoxysilane in the presence of PVA or PVP. This offers a simple way to fabricate a Au layer on SiO 2 or other microspheres. The SiO 2 @Au particles demonstrated high catalytic activity in the reduction of 4-nitrophenol. - Highlights: • Facile direct deposition method for Au nanoparticles on silica microspheres. • Influence of different types of macromolecule on the formation of Au shell. • High catalytic performance of Au nanoparticles on silica microspheres

  7. Physical and Chemical Properties of TiOxNy Prepared by Low-Temperature Oxidation of Ultrathin Metal Nitride Directly Deposited on SiO2

    Institute of Scientific and Technical Information of China (English)

    HAN Yue-Ping; HAN Yan

    2009-01-01

    Physical and chemical properties of titanium oxynitride (TiOxNy) formed by low-temperature oxidation of titanium nitride (TIN) layer are investigated for advanced metal-oxide--semiconductor (MOS) gate dielectric application.TiOx Ny exhibits polycrystalline properties after the standard thermal process for MOS device fabrication,showing the preferred orientation at [200].Superior electrical properties of TiOxNy can be maintained before and after the annealing,probably due to the nitrogen incorporation in the oxide bulk and at the interface.Naturally formed transition layer between TiOxNy and SiO2 is also confirmed.

  8. Influence of annealing conditions on anodic tungsten oxide layers and their photoelectrochemical activity

    International Nuclear Information System (INIS)

    Syrek, Karolina; Zych, Marta; Zaraska, Leszek; Sulka, Grzegorz D.

    2017-01-01

    Highlights: • Effect of annealing temperature on the morphology and crystalline structure of anodic WO 3 was investigated. • Photoelectrochemical properties of WO 3 layers annealed at different temperatures were studied. • Edges of conduction and valence bands were estimated for tungsten oxide layers annealed at different temperatures. • Influence of annealing time on crystalline structure, morphology and photoelectrochemical performance was studied. - Abstract: The nanoporous tungsten oxide films having an amorphous structure were prepared in an electrolyte containing fluoride ions via an anodization process. The as-synthesized anodic oxide layers can be easily converted to the monoclinic WO 3 phase upon annealing in air. The as-synthesized and annealed WO 3 layers were investigated by using X-ray diffraction, scanning electron microscopy, and photocurrent spectroscopy. The effect of annealing temperature and annealing time on the oxide morphology, crystal structure and electrochemical properties were studied. The samples were annealed in air at the temperatures ranging from 400 to 600 °C, and it was found that the original porous morphology of oxide is completely lost after annealing at 600 °C. The changes in the average crystallite sizes upon annealing were confirmed by XRD measurements. The photoelectrochemical performance of the annealed WO 3 layers were studied under pulsed UV illumination, and the highest photocurrents were observed at the incident light wavelength of 350 nm for the sample annealed at 500 °C for 2 h. The band gap energy and the positions of conduction and valence band edges were determined for all studied samples.

  9. Characterization of the implantation damage in SiO2 with x-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Ajioka, T.; Ushio, S.

    1986-01-01

    X-ray photoelectron spectroscopy (XPS) has been applied to characterize the damage introduced into SiO 2 by ion implantation. By measuring the peak width of Si/sub 2p/ from SiO 2 which corresponds to perturbation of the SiO 2 network, good depth profiles of the damage have been obtained for implanted samples and subsequently annealed samples. The results show that the damage distributed more widely than that calculated from energy deposition and that the perturbation of the network is caused not only by radiation damage but also by the existence of impurities in the network. It has been found that the XPS method is effective to understand the atomic structure, and thus, electrical properties of SiO 2

  10. Effect of annealing and oxide layer thickness on doping profiles shape of ''through-oxide'' implanted P+ ions in textured silicon

    International Nuclear Information System (INIS)

    El-Dessouki, M.S.; Galloni, R.

    1987-10-01

    Phosphorous ions at energies of 60+100 KeV, and doses (4+5)x10 15 atom/cm 2 have been implanted randomly through SiO 2 layers into textured silicon crystals. The penetration profiles of the P + ions have been determined by means of differential sheet resistivity and Hall-effect, together with the anodic oxidation stripping technique. The effect of the oxide layer thickness, annealing temperature on the junction properties has been studied. The damage produced by implantation, has also been investigated using transmission electron microscope (TEM). From the mobility measurements of the free carriers as a function of depth through the junction, two minima have been observed in through oxide implanted samples. The one nearer to the Si-SiO 2 interface (at about 200A from the interface) was related to the damage produced by the recoil oxygen atoms from the oxide layer into silicon. The deeper minimum is lying at ∼ 0.2μm from the interface and was attributed to the damage produced by the implanted P + ions, which caused clusters and defect loops after annealing. This damage was observed through TEM photographs. The optimum conditions for producing shallow junction without losing much of the implanted P + ions through the oxide layer were estimated. (author). 22 refs, 7 figs, 1 tab

  11. Buffer layer annealing effects on the magnetization reversal process in Pd/Co/Pd systems

    International Nuclear Information System (INIS)

    Fassatoui, A.; Belhi, R.; Vogel, J.; Abdelmoula, K.

    2016-01-01

    We have investigated the effect of annealing the buffer layer on the magnetization reversal behavior in Pd/Co/Pd thin films using magneto-optical Kerr microscopy. It was found that annealing the buffer layer at 150 °C for 1 h decreases the coercivity and increases the saturation magnetization and the effective magnetic anisotropy constant. This study also shows that the annealing induces a change of the magnetization reversal from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation. This result demonstrates that the main effect of annealing the buffer layer is to decrease the domain wall pinning in the Co layer, favoring the domain wall propagation mode. - Highlights: • The buffer layer surface morphology changes upon annealing of the buffer layer. • The coercivity decreases while the saturation magnetization and the effective anisotropy increase with the annealing of the buffer layer. • The reversal process changes from a mixed nucleation and domain wall propagation process to one dominated by domain wall propagation when annealing the buffer layer.

  12. Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

    International Nuclear Information System (INIS)

    Pi, X.D.; Coleman, P.G.; Harding, R.; Davies, G.; Gwilliam, R.M.; Sealy, B.J.

    2003-01-01

    Positron annihilation spectroscopy has been employed to study changes in the interface region between nanocrystalline Si and SiO 2 , following annealing between 400 deg. C and 900 deg. C in nitrogen or oxygen. With the support of photoluminescence spectroscopy we find that nitrogen and oxygen are trapped in voids at the interface at low temperatures. At temperatures above 700 deg. C both nitrogen and oxygen react with Si nanocrystals, and the resulting volume increase introduces stress in the SiO 2 matrix which is relaxed by the shrinkage of its intrinsic open volume. Oxygen appears to enhance Si diffusion in SiO 2 so that the agglomeration of Si nanocrystals occurs more readily during annealing in oxygen than in nitrogen

  13. On the photon annealing of silicon-implanted gallium-nitride layers

    International Nuclear Information System (INIS)

    Seleznev, B. I.; Moskalev, G. Ya.; Fedorov, D. G.

    2016-01-01

    The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.

  14. Nd:YAG laser annealing investigation of screen-printed CIGS layer on PET: Layer annealing method for photovoltaic cell fabrication process

    KAUST Repository

    Alsaggaf, Ahmed

    2014-06-01

    Cu(In, Ga)Se2 (CIGS) ink was formulated from CIGS powder, polyvinyl butyral PVB, terpineol and polyester/polyamine co-polymeric dispersant KD-1. Thin films with different thicknesses were deposited on PET substrate using screen-printing followed by heat treatment using a Nd:YAG laser. The structure and morphology of the heated thin films were studied. The characterization of the CIGS powder, ink, and film was done using TGA, SEM, FIB, EDS, and XRD. TGA analysis shows that the CIGS ink is drying at 200 °C, which is well below the decomposition temperature of the PET substrate. It was observed by SEM that 20 pulses of 532nm and 60 mJ/cm2 Nd:YAG laser annealing causes atomic diffusion on the near surface area. Furthermore, FIB cross section images were utilized to monitor the effect of laser annealing in the depth of the layer. Laser annealing effects were compared to as deposited layer using XRD in reference to CIGS powder. The measurement shows that crystallinity of deposited CIGS is retained while EDS quantification and atomic ratio result in gradual loss of selenium as laser energy increases. The laser parameters were tuned in an effort to utilize laser annealing of screen-printed CIGS layer as a layer annealing method for solar cell fabrication process.

  15. Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study.

    Science.gov (United States)

    Pimentel, Ana; Ferreira, Sofia Henriques; Nunes, Daniela; Calmeiro, Tomas; Martins, Rodrigo; Fortunato, Elvira

    2016-04-20

    The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C.

  16. Bond length contraction in Au nanocrystals formed by ion implantation into thin SiO2

    International Nuclear Information System (INIS)

    Kluth, P.; Johannessen, B.; Giraud, V.; Cheung, A.; Glover, C.J.; Azevedo, G. de M; Foran, G.J.; Ridgway, M.C.

    2004-01-01

    Au nanocrystals (NCs) fabricated by ion implantation into thin SiO 2 and annealing were investigated by means of extended x-ray absorption fine structure (EXAFS) spectroscopy and transmission electron microscopy. A bond length contraction was observed and can be explained by surface tension effects in a simple liquid-drop model. Such results are consistent with previous reports on nonembedded NCs implying a negligible influence of the SiO 2 matrix. Cumulant analysis of the EXAFS data suggests surface reconstruction or relaxation involving a further shortened bond length. A deviation from the octahedral closed shell structure is apparent for NCs of size 25 A

  17. Processing and optical properties of Nd3+-doped SiO2-TiO2-Al2O3 planar waveguides

    Science.gov (United States)

    Xiang, Qing; Zhou, Yan; Ooi, Boon Siew; Lam, Yee Loy; Chan, Yuen Chuen; Kam, Chan Hin

    2000-05-01

    We report here the processing and optical characterization of Nd3+-doped SiO2-TiO2-Al2O3 planar waveguides deposited on SOS substrates by the sol-gel route combined with spin-coating and rapid thermal annealing. The recipes used for preparing the solutions by sol-gel route are in mole ratio of 93SiO2:20AlO1.5: x ErO1.5. In order to verify the residual OH content in the films, FTIR spectra were measured and the morphology of the material by the XRD analysis. Five 2-layer films annealed at a maximum temperature of 500 degrees C, 700 degrees C, 900 degrees, 1000 degrees C, 1100 degrees C respectively were fabricated on silicon. The FTIR and XRD curves show that annealing at 1050 degrees C for 15s effectively removes the OH in the materia and keeps the material amorphous. The propagation loss of the planar waveguides was measured by using the method based on scattering in measurements and the result was obtained to be 1.54dB/cm. The fluorescence spectra were measured with 514nm wavelength of Ar+ laser by directly shining the pump beam on the film instead of prism coupling. The results show that the 1 mole Nd3+ content recipe has the strongest emission efficiency among the four samples investigated.

  18. Defect Generation for a Hydrated Layer and Thermal Stability Based on Ba0.7Sr0.3TiO3/SiO2 as H+ Sensitive Layer in Ion-Sensitive Field-Effect Transistor Devices

    Science.gov (United States)

    Chen, Chun-Yuan; Chou, Jung-Chuan; Chou, Hsueh-Tao

    2009-04-01

    In this paper, we present a novel sensitive ion-sensitive field-effect transistor (ISFET) membrane based on Ba0.7Sr0.3TiO3 (BST)/SiO2 fabricated by sputtering deposition. The proposed device exhibits a linear shift in acidic solutions in the pH range from 1 to 10. The device sensitivity was about 50-55 mV/pH for different deposition times. We also examined the trapping behavior of the surface hydrated layer using the metal-insulator-semiconductor (MIS) structure. Results show that the hydration layer gives rise to stress polarity dependence of electron injection when immersed in pH buffer solutions. Injection from the gate electrode produces larger positive charges and interface state densities in contrast to the substrate injection, which causes simultaneous positive and negative charge trapping. A physical model that quantitatively describes the asymmetry associated with the hydrated diffusion layer is presented, and the temperature effects of BST/SiO2 ISFET devices in the range from 25 to 65 °C were examined. We observed that pH sensitivity increases with increasing temperature. The temperature coefficient of sensitivity (TCS) can be divided into two different ranges: 0.08 mV/pH °C between 25 and 45 °C, and 0.57 mV/pH °C between 45 and 65 °C. A better thermal stability is produced in the 25 and 45 °C range in comparison with other sensitive layers.

  19. Controlling the optical parameters of self-assembled silver films with wetting layers and annealing

    Science.gov (United States)

    Ciesielski, Arkadiusz; Skowronski, Lukasz; Trzcinski, Marek; Szoplik, Tomasz

    2017-11-01

    We investigated the influence of presence of Ni and Ge wetting layers as well as annealing on the permittivity of Ag films with thicknesses of 20, 35 and 65 nm. Most of the research on thin silver films deals with very small (wetting and capping material, post-process annealing). Our study, based on atomic force microscopy, ellipsometric and X-ray photoelectron spectroscopy measurements, shows that utilizing a wetting layer is comparable to increasing the thickness of the silver film. Both operations decrease the roughness-to-thickness ratio, thus decreasing the scattering losses and both narrow the Lorentz-shaped interband transition peak. However, while increasing silver thickness increases absorption on the free carriers, the use of wetting layers influences the self-assembled internal structure of silver films in such a way, that the free carrier absorption decreases. Wetting layers also introduce additional contributions from effects like segregation or diffusion, which evolve in time and due to annealing.

  20. Fabrication of poly-crystalline Si-based Mie resonators via amorphous Si on SiO2 dewetting.

    Science.gov (United States)

    Naffouti, Meher; David, Thomas; Benkouider, Abdelmalek; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle; Bidault, Sebastien; Bonod, Nicolas; Abbarchi, Marco

    2016-02-07

    We report the fabrication of Si-based dielectric Mie resonators via a low cost process based on solid-state dewetting of ultra-thin amorphous Si on SiO2. We investigate the dewetting dynamics of a few nanometer sized layers annealed at high temperature to form submicrometric Si-particles. Morphological and structural characterization reveal the polycrystalline nature of the semiconductor matrix as well as rather irregular morphologies of the dewetted islands. Optical dark field imaging and spectroscopy measurements of the single islands reveal pronounced resonant scattering at visible frequencies. The linewidth of the low-order modes can be ∼20 nm in full width at half maximum, leading to a quality factor Q exceeding 25. These values reach the state-of-the-art ones obtained for monocrystalline Mie resonators. The simplicity of the dewetting process and its cost-effectiveness opens the route to exploiting it over large scales for applications in silicon-based photonics.

  1. Electronic states at Si-SiO2 interface introduced by implantation of Si in thermal SiO2

    International Nuclear Information System (INIS)

    Kalnitsky, A.; Poindexter, E.H.; Caplan, P.J.

    1990-01-01

    Interface traps due to excess Si introduced into the Si-SiO 2 system by ion implantation are investigated. Implanted oxides are shown to have interface traps at or slightly above the Si conduction band edge with densities proportional to the density of off-stoichiometric Si at the Si-SiO 2 interface. Diluted oxygen annealing is shown to result in physical separation of interface traps and equilibrium substrate electrons, demonstrating that ''interface'' states are located within a 0.5 nm thick layer of SiO 2 . Possible charge trapping mechanisms are discussed and the effect of these traps on MOS transistor characteristics is described using a sheet charge model. (author)

  2. Structural colors of the SiO2/polyethyleneimine thin films on poly(ethylene terephthalate) substrates

    International Nuclear Information System (INIS)

    Jia, Yanrong; Zhang, Yun; Zhou, Qiubao; Fan, Qinguo; Shao, Jianzhong

    2014-01-01

    The SiO 2 /polyethyleneimine (PEI) films with structural colors on poly(ethylene terephthalate) (PET) substrates were fabricated by an electrostatic self-assembly method. The morphology of the films was characterized by Scanning Electron Microscopy. The results showed that there was no distinguishable multilayered structure found of SiO 2 /PEI films. The optical behaviors of the films were investigated through the color photos captured by a digital camera and the color measurement by a multi-angle spectrophotometer. Different hue and brightness were observed at various viewing angles. The structural colors were dependent on the SiO 2 particle size and the number of assembly cycles. The mechanism of the structural colors generated from the assembled films was elucidated. The morphological structures and the optical properties proved that the SiO 2 /PEI film fabricated on PET substrate formed a homogeneous inorganic/organic SiO 2 /PEI composite layer, and the structural colors were originated from single thin film interference. - Highlights: • SiO 2 /PEI thin films were electrostatic self-assembled on PET substrates. • The surface morphology and optical behavior of the film were investigated. • The structural colors varied with various SiO 2 particle sizes and assembly cycles. • Different hue and lightness of SiO 2 /PEI film were observed at various viewing angles. • Structural color of the SiO 2 /PEI film originated from single thin film interference

  3. Transfer free graphene growth on SiO2 substrate at 250 °C

    Science.gov (United States)

    Vishwakarma, Riteshkumar; Rosmi, Mohamad Saufi; Takahashi, Kazunari; Wakamatsu, Yuji; Yaakob, Yazid; Araby, Mona Ibrahim; Kalita, Golap; Kitazawa, Masashi; Tanemura, Masaki

    2017-03-01

    Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-solid reaction. The key to this approach is the catalyst metal, which is not popular for graphene growth by chemical vapor deposition. A catalyst metal film of 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO2/Si substrate. The sample was then annealed at 250 °C under vacuum condition. Raman spectra measured after the removal of the catalyst by chemical etching showed intense G and 2D peaks together with a small D and intense SiO2 related peaks, confirming the transfer free growth of multilayer graphene on SiO2/Si. The domain size of the graphene confirmed by optical microscope and atomic force microscope was about 5 μm in an average. Thus, this approach will open up a new route for transfer free graphene growth at low temperatures.

  4. Selective epitaxial growth properties and strain characterization of Si1- x Ge x in SiO2 trench arrays

    Science.gov (United States)

    Koo, Sangmo; Jang, Hyunchul; Ko, Dae-Hong

    2017-04-01

    In this study, we investigated the formation of a Si1- x Ge x fin structure in SiO2 trench arrays via an ultra-high-vacuum chemical-vapor deposition (UHV-CVD) selective epitaxial growth (SEG) process. Defect generation and microstructures of Si1- x Ge x fin structures with different Ge concentrations ( x = 0.2, 0.3 and 0.45) were examined. In addition, the strain evolution of a Si1- x Ge x fin structure was analyzed by using reciprocal space mapping (RSM). An (111) facet was formed from the Si1- x Ge x epi-layer and SiO2 trench wall interface to minimize the interface and the surface energy. The Si1- x Ge x fin structures were fully relaxed along the direction perpendicular to the trenches regardless of the Ge concentration. On the other hand, the fin structures were fully or partially strained along the direction parallel to the trenches depending on the Ge concentration: fully strained Si0.8Ge0.2 and Si0.7Ge0.3, and a Si0.55Ge0.45 strain-relaxed buffer. We further confirmed that the strain on the Si1- x Ge x fin structures remained stable after oxide removal and H2/N2 post-annealing.

  5. PAC study in the HfO2-SiO2 system

    International Nuclear Information System (INIS)

    Chain, C.Y.; Damonte, L.C.; Ferrari, S.; Munoz, E.; Torres, C. Rodriguez; Pasquevich, A.F.

    2010-01-01

    A high-k HfO 2 /SiO 2 gate stack is taking the place of SiO 2 as a gate dielectric in field effect transistors. This fact makes the study of the solid-state reaction between these oxides very important. Nanostructure characterization of a high-energy ball milled and post-annealed equimolar HfO 2 and amorphous SiO 2 powder mixture has been carried out by perturbed angular correlations (PAC) technique. The study was complemented with X-ray diffraction and positron annihilation lifetime spectroscopy (PALS). The experimental results revealed that the ball milling of equimolar mixtures increases the defects concentration in hafnium oxide. No solid-state reaction occurred even after 8 h of milling. The formation of HfSiO 4 (hafnon) was observed in the milled blends annealed at high temperatures.The PAC results of the milled samples are compared with those obtained for pure m-ZrO 2 subjected to high-energy ball milling and with reported microstructure data for the system ZrO 2 -SiO 2 .

  6. Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation

    International Nuclear Information System (INIS)

    Ghislotti, G.; Nielsen, B.; Asoka-Kumar, P.; Lynn, K.G.; Di Mauro, L.F.; Corni, F.; Tonini, R.

    1997-01-01

    Positron annihilation spectroscopy (PAS) is used to study Si-rich SiO 2 samples prepared by implantation of Si (160 keV) ions at doses in the range 3x10 16 endash 3x10 17 cm -2 and subsequent thermal annealing at high temperature (up to 1100 degree C). Samples implanted at doses higher than 5x10 16 cm -2 and annealed above 1000 degree C showed a PAS spectrum with an annihilation peak broader than the unimplanted sample. We discuss how these results are related to the process of silicon precipitation inside SiO 2 . copyright 1997 American Institute of Physics

  7. Coupling between Ge-nanocrystals and defects in SiO2

    International Nuclear Information System (INIS)

    Skov Jensen, J.; Franzo, G.; Leervad Petersen, T.P.; Pereira, R.; Chevallier, J.; Christian Petersen, M.; Bech Nielsen, B.; Nylandsted Larsen, A.

    2006-01-01

    Room temperature photoluminescence (PL) at around 600 nm from magnetron-sputtered SiO 2 films co-doped with Ge is reported. The PL signal is observed in pure SiO 2 , however, its intensity increases significantly in the presence of Ge-nanocrystals (Ge-nc). The PL intensity has been optimized by varying the temperature of heat treatment, type of gas during heat treatment, concentration of Ge in the SiO 2 films, and gas pressure during deposition. Maximum intensity occurs when Ge-nc of around 3.5 nm are present in large concentration in SiO 2 layers deposited at fairly high gas pressure. Based on time resolved PL, and PL measurements after α-particle irradiation or H passivation, we attribute the origin of the PL to a defect in SiO 2 (probably an O deficiency) that is excited through an energy transfer from Ge-nc. There is no direct PL from the Ge-nc; however, there is a strong coupling between excitons created in the Ge-nc and the SiO 2 defect

  8. SiO2 stabilized Pt/C cathode catalyst for proton exchange membrane fuel cells

    International Nuclear Information System (INIS)

    Zhu Tong; Du Chunyu; Liu Chuntao; Yin Geping; Shi Pengfei

    2011-01-01

    This paper describes the preparation of SiO 2 stabilized Pt/C catalyst (SiO 2 /Pt/C) by the hydrolysis of alkoxysilane, and examines the possibility that the SiO 2 /Pt/C is used as a durable cathode catalyst for proton exchange membrane fuel cells (PEMFCs). TEM and XRD results revealed that the hydrolysis of alkoxysilane did not significantly change the morphology and crystalline structure of Pt particles. The SiO 2 /Pt/C catalyst exhibited higher durability than the Pt/C one, due to the facts that the silica layers covered were beneficial for reducing the Pt aggregation and dissolution as well as increasing the corrosion resistance of supports, although the benefit of silica covering was lower than the case of Pt/CNT catalyst. Also, it was observed that the activity of the SiO 2 /Pt/C catalyst for the oxygen reduction reaction was somewhat reduced compared to the Pt/C one after the silica covering. This reduction was partially due to the low oxygen kinetics as revealed by the rotating-disk-electrode measurement. Silica covering by hydrolysis of only 3-aminopropyl trimethoxysilane is able to achieve a good balance between the durability and activity, leading to SiO 2 /Pt/C as a promising cathode catalyst for PEMFCs.

  9. Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

    Science.gov (United States)

    Shklyaev, A A; Latyshev, A V

    2016-12-01

    We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

  10. Study of hydrogen interaction with SiO2/Si(100) system using positrons

    International Nuclear Information System (INIS)

    Asoka-Kumar, P.; Lynn, K.G.; Leung, T.C.; Nielsen, B.; Wu, X.Y.

    1991-01-01

    We describe positron annihilation studies of SiO 2 /Si(100) structures having 100-nm-thick oxide grown by plasma enhanced chemical vapor deposition. A normalized shape parameter is used to characterize the positron annihilation spectra. Activation and passivation of interface states by atomic hydrogen are demonstrated by repeated vacuum anneal and atomic hydrogen exposure. Hydrogen activation energy is derived for one of the samples as 2.02±0.07 eV

  11. Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

    Directory of Open Access Journals (Sweden)

    Jhovani Bornacelli

    2013-01-01

    Full Text Available We studied the photoluminescence (PL of Si nanocrystals (Si-NCs embedded in SiO2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm inside the SiO2 achieving a robust and better protected system. After metal ion implantation (Ag or Au, and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H2/N2 and Ar to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

  12. Effect of thermal annealing treatment with titanium chelate on buffer layer in inverted polymer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Zhiyong [College of Science, Shenyang Agricultural University, Shenyang 110866 (China); Wang, Ning, E-mail: ning_wang@outlook.com [School of Electrical and Electronic and Engineering, Nanyang Technological University 639798 (Singapore); Fu, Yan, E-mail: 1060945062@qq.com [College of Science, Shenyang Agricultural University, Shenyang 110866 (China)

    2016-12-15

    Highlights: • The TIPD layer as electron extraction layer and instead of Ca or LiF. • Impact of the work function of TIPD layer by thermal annealing treatment. • Importance of TIPD layer as electron extraction layer for work function and potential barrier. - Abstract: The solution processable electron extraction layer (EEL) is crucial for polymer solar cells (PSCs). Here, we investigated titanium (diisopropoxide) bis(2,4-pentanedionate) (TIPD) as an EEL and fabricated inverted PSCs with a blend of poly(3-hexylthiophene) (P3HT) and indene-C60 bisadduct (ICBA) acting as the photoactive layer, with a structure of ITO/TIPD/P3HT:ICBA/MoO{sub 3}/Ag. After thermal annealing treatment at 150 °C for 15 min, the PSC performances increased from 3.85% to 6.84% and they achieve stable power conversion efficiency (PCE), with a similar PCE compared with TiO{sub 2} as an EEL by the vacuum evaporated method. Fourier transform infrared spectroscopy (FTIR) and ultraviolet photoelectron spectroscopy (UPS) confirmed that the TIPD decomposed and formed the Ti=O bond, and the energy level of the lowest unoccupied molecular orbital and the highest occupied molecular orbital increased. The space charge limited current (SCLC) measurements further confirmed the improvement in electron collection and the transport ability using TIPD as the EEL and thermal annealing.

  13. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    KAUST Repository

    Lim, Namsoo

    2018-02-28

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO2/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO2/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO2/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm−1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shifted to a more positive or negative value, depending on the initial doping type (p- or n-type, respectively) of the contact doping. The Dirac voltage shifts with porosity were ascribed mainly to the compensation for the reduced capacitance owing to the SiO2–air hetero-structured dielectric layer within the periodically aligned nanopores capped by the suspended graphene (electrostatic doping). The hysteresis (Dirac voltage difference during the forward and backward scans) was reduced when utilizing an NP SiO2/Si substrate with smaller pores and/or a low porosity because fewer H2O or O2 molecules could be trapped inside the smaller pores.

  14. Characterization Of Oxide Layers Produced On The AISI 321 Stainless Steel After Annealing

    Directory of Open Access Journals (Sweden)

    Bochnowski W.

    2015-09-01

    Full Text Available In this study, the structure, chemical composition and topography of oxide layers produced on the surface of the AISI 321 austenitic steel in the annealing process were analyzed. Heat treatment was done at 980°C temperature for 1 hour time in different conditions. The annealing was done in a ceramic furnace in oxidation atmosphere and in vacuum furnaces with cylindrical molybdenum and graphite chambers. The analysis was carried out using the following methods: a scanning electron microscope (SEM equipped with an energy-dispersive X-ray spectrometer (EDX, a transmission electron microscope (TEM equipped with an energy-dispersive X-ray spectrometer (EDX, an X-ray diffractometer (XRD, a secondary ion mass spectrometer with time-of-flight mass analyzer (TOF SIMS and an atomic force microscope (AFM. The oxide layer formed during annealing of the AISI 321 steel at 980°C consisted of sub-layers, diversified in the chemical composition. The thickness of the oxidized layer is depended on the annealing conditions. In a ceramic furnace in oxidation atmosphere, the thickness of the oxide layer was of 300-500 nm, in a vacuum furnace with molybdenum and graphite heating chambers, it ranged from 40 to 300 nm and from a few to 50 nm, respectively. TOF SIMS method allows to get average (for the surface of 100 μm × 100 μm depth profiles of concentration of particular elements and elements combined with oxygen. In oxide layers formed in vacuum furnaces there are no iron oxides. Titanium, apart from being bounded with carbon in carbides, is a component of the oxide layer formed on the surface of the AISI 321 steel.

  15. Electrocatalytic oxidation of alcohols on single gold particles in highly ordered SiO2 cavities

    International Nuclear Information System (INIS)

    Li, Na; Zhou, Qun; Tian, Shu; Zhao, Hong; Li, Xiaowei; Adkins, Jason; Gu, Zhuomin; Zhao, Lili; Zheng, Junwei

    2013-01-01

    In the present work, we report a new and simple approach for preparing a highly ordered Au (1 1 1) nanoparticle (NP) array in SiO 2 cavities on indium-doped tin oxide (ITO) electrodes. We fabricated a SiO 2 cavity array on the surface of an ITO electrode using highly ordered self-assembly of polystyrene spheres as a template. Gold NPs were electrodeposited at the bottom of the SiO 2 cavities, and single gold NPs dominated with (1 1 1) facets were generated in each cavity by annealing the electrode at a high temperature. Such (1 1 1) facets were the predominate trait of the single gold particle which exhibited considerable electrocatalytic activity toward oxidation of methanol, ethanol, and glycerol. This has been attributed to the formation of incipient hydrous oxides at unusually low potential on the specific (1 1 1) facet of the gold particles. Moreover, each cavity of the SiO 2 possibly behaves as an independent electrochemical cell in which the methanol molecules are trapped; this produces an environment advantageous to catalyzing electrooxidation. The oxidation of methanol on the electrodes is a mixed control mechanism (both by diffusion and electrode kinetics). This strategy both provided an approach to study electrochemical reactions on a single particle in a microenvironment and may supply a way to construct alcohols sensors

  16. Preparation and Characterization of Fluorescent SiO2 Microspheres

    Science.gov (United States)

    Xu, Cui; Zhang, Hao; Guan, Ruifang

    2018-01-01

    Fluorescent compound without typical fluorophores was synthesized with citric acid (CA) and aminopropyltriethoxysilane (APTS) firstly, and then it was grafted to the surface of the prepared SiO2 microspheres by chemical reaction. The fluorescent SiO2 microspheres with good fluorescent properties were obtained by optimizing the reaction conditions. And the morphology and structure of the fluorescent SiO2 microspheres have been characterized by scanning electron microscopy (SEM) and fourier transform infrared (FTIR) spectroscopy. The results showed that the preparation of fluorescent SiO2 microspheres have good monodispersity and narrow particle size distribution. Moreover, the fluorescent SiO2 microspheres can be applied to detect Fe3+ in aqueous solution, prepare fluorescent SiO2 rubber, and have potential to be applied in the fluorescent labeling and fingerprint appearing technique fields.

  17. High ink absorption performance of inkjet printing based on SiO2@Al13 core-shell composites

    Science.gov (United States)

    Chen, YiFan; Jiang, Bo; Liu, Li; Du, Yunzhe; Zhang, Tong; Zhao, LiWei; Huang, YuDong

    2018-04-01

    The increasing growth of the inkjet market makes the inkjet printing more necessary. A composite material based on core-shell structure has been developed and applied to prepare inkjet printing layer. In this contribution, the ink printing record layers based on SiO2@Al13 core-shell composite was elaborated. The prepared core-shell composite materials were characterized by X-ray photoelectron spectroscopy (XPS), zeta potential, X-ray diffraction (XRD), scanning electron microscopy (SEM). The results proved the presence of electrostatic adsorption between SiO2 molecules and Al13 molecules with the formation of the well-dispersed system. In addition, based on the adsorption and the liquid permeability analysis, SiO2@Al13 ink printing record layer achieved a relatively high ink uptake (2.5 gmm-1) and permeability (87%), respectively. The smoothness and glossiness of SiO2@Al13 record layers were higher than SiO2 record layers. The core-shell structure facilitated the dispersion of the silica, thereby improved its ink absorption performance and made the clear printed image. Thus, the proposed procedure based on SiO2@Al13 core-shell structure of dye particles could be applied as a promising strategy for inkjet printing.

  18. The Role of SiO2 Gas in the Operation of Anti-Corrosion Coating Produced by PVD

    Directory of Open Access Journals (Sweden)

    Meysam Zarchi

    2015-09-01

    Full Text Available This study examined theSiO2 gas present in the coatings used in corrosion industry.These layers have been created by physical vapor deposition (PVD, with an appropriate performance. Sublimation of SiO2is used to protect PVD aluminum flakes from water corrosionand to generate highly porous SiO2 flakes with holes in the nanometer range. SiOx/Al/SiOx sandwiches were made as well as Ag loaded porous SiO2 as antimicrobial filler.

  19. Morphology of SiO2 films as a key factor in alignment of liquid crystals with negative dielectric anisotropy

    Directory of Open Access Journals (Sweden)

    Volodymyr Tkachenko

    2016-11-01

    Full Text Available Control of liquid crystal (LC orientation using a proper SiO2 alignment layer is essential for the optimization of vertically aligned nematic (VAN displays. With this aim, we studied the optical anisotropy of thin SiO2 films by generalized ellipsometry as a function of deposition angle. The columnar SiO2 structure orientation measured by a noninvasive ellipsometry technique is reported for the first time, and its morphology influence on the LC alignment is demonstrated for large deposition angles.

  20. Identification of conduction and hot electron property in ZnS, ZnO and SiO2

    International Nuclear Information System (INIS)

    Huang Jinzhao; Xu Zheng; Zhao Suling; Li Yuan; Yuan Guangcai; Wang Yongsheng; Xu Xurong

    2007-01-01

    The impact excitation and ionization is the most important process in layered optimization scheme and solid state cathodoluminescence. The conduction property (semiconductor property) of SiO 2 , ZnS and ZnO is studied based on organic/inorganic electroluminescence. The hot electron property (acceleration and multiplication property) of SiO 2 and ZnS is investigated based on the solid state cathodoluminescence. The results show that the SiO 2 has the fine hot electron property and the conduction property is not as good as ZnO and ZnS

  1. X-ray Diffraction Investigation of Annealing Behavior of Peened Surface Deformation Layer on Precipitation Hardening Stainless Steel

    Science.gov (United States)

    Huang, Junjie; Wang, Zhou; Gan, Jin; Yang, Ying; Huang, Feng; Wu, Gang; Meng, Qingshuai

    2018-05-01

    In order to investigate the recrystallization behavior of peened surface deformation layer of precipitation hardening stainless steel, a classic x-ray diffraction line profile analysis, Voigt method, was carried out on peened 17-4PH with different isothermal annealing temperatures. The activation energy of domain boundary migration ( Q a) and the activation energy of microstrain relaxation ( Q b) were calculated by regression analysis in different annealing temperature conditions. The results show that the value of Q a decreases with annealing temperature increasing, which is due to the influence of precipitation (ɛ-Cu) size on the movements of grain and subgrain boundaries. The maximum growth rate of ɛ-Cu particles occurs during 400 to 500 °C interval. Compared with growth behavior of domain size, microstrain relaxation behavior is less sensitive to precipitation particle size. The effects of annealing temperature and time on dislocation density are both significant when annealing temperature is lower than 500 °C. However, the effect of annealing temperature on dislocation density becomes insignificant when annealing temperature is higher than 500 °C. 300 °C annealing temperature only leads to the microstrain relaxation but nearly cannot lead to the domain size growth even if prolonging annealing time. Microstructure enhancement effect still exists in plastic deformation layer when 300 °C annealing temperature lasts for 60 min but nearly disappears when 600 °C annealing temperature lasts for 20 min.

  2. X-ray Diffraction Investigation of Annealing Behavior of Peened Surface Deformation Layer on Precipitation Hardening Stainless Steel

    Science.gov (United States)

    Huang, Junjie; Wang, Zhou; Gan, Jin; Yang, Ying; Huang, Feng; Wu, Gang; Meng, Qingshuai

    2018-04-01

    In order to investigate the recrystallization behavior of peened surface deformation layer of precipitation hardening stainless steel, a classic x-ray diffraction line profile analysis, Voigt method, was carried out on peened 17-4PH with different isothermal annealing temperatures. The activation energy of domain boundary migration (Q a) and the activation energy of microstrain relaxation (Q b) were calculated by regression analysis in different annealing temperature conditions. The results show that the value of Q a decreases with annealing temperature increasing, which is due to the influence of precipitation (ɛ-Cu) size on the movements of grain and subgrain boundaries. The maximum growth rate of ɛ-Cu particles occurs during 400 to 500 °C interval. Compared with growth behavior of domain size, microstrain relaxation behavior is less sensitive to precipitation particle size. The effects of annealing temperature and time on dislocation density are both significant when annealing temperature is lower than 500 °C. However, the effect of annealing temperature on dislocation density becomes insignificant when annealing temperature is higher than 500 °C. 300 °C annealing temperature only leads to the microstrain relaxation but nearly cannot lead to the domain size growth even if prolonging annealing time. Microstructure enhancement effect still exists in plastic deformation layer when 300 °C annealing temperature lasts for 60 min but nearly disappears when 600 °C annealing temperature lasts for 20 min.

  3. Potential energy landscape of an interstitial O2 molecule in a SiO2 film near the SiO2/Si(001) interface

    Science.gov (United States)

    Ohta, Hiromichi; Watanabe, Takanobu; Ohdomari, Iwao

    2008-10-01

    Potential energy distribution of interstitial O2 molecule in the vicinity of SiO2/Si(001) interface is investigated by means of classical molecular simulation. A 4-nm-thick SiO2 film model is built by oxidizing a Si(001) substrate, and the potential energy of an O2 molecule is calculated at Cartesian grid points with an interval of 0.05 nm in the SiO2 film region. The result shows that the potential energy of the interstitial site gradually rises with approaching the interface. The potential gradient is localized in the region within about 1 nm from the interface, which coincides with the experimental thickness of the interfacial strained layer. The potential energy is increased by about 0.62 eV at the SiO2/Si interface. The result agrees with a recently proposed kinetic model for dry oxidation of silicon [Phys. Rev. Lett. 96, 196102 (2006)], which argues that the oxidation rate is fully limited by the oxidant diffusion.

  4. Selective SiO2 etching in three dimensional structures using parylene-C as mask

    NARCIS (Netherlands)

    Veltkamp, Henk-Willem; Zhao, Yiyuan; de Boer, Meint J.; Wiegerink, Remco J.; Lötters, Joost Conrad

    2017-01-01

    This abstract describes an application of an easy and straightforward method for selective SiO2 etching in three dimensional structures, which is developed by our group. The application in this abstract is the protection of the buried-oxide (BOX) layer of a silicon-on-insulator (SOI) wafer against

  5. Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Heo, J.H.; Shin, C.M. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-02-01

    ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 deg. C with the concentration of 0.3 M exhibits the best structural and optical properties.

  6. Phonon spectra in SiO2 glasses

    International Nuclear Information System (INIS)

    Perez R, J.F.; Jimenez S, S.; Gonzalez H, J.; Vorobiev, Y.V.; Hernandez L, M.A.; Parga T, J.R.

    1999-01-01

    Phonon spectra in SiO 2 sol-gel made glasses annealed under different conditions are investigated using infrared absorption and Raman scattering. These data are compared with those obtained in commercial optical-quality quartz. All the materials exhibit the same phonon bands, the exact position and the intensity depend on the measuring technique and on the sample preparation method. The phonon spectra in this material are interpreted on the basis of a simple quasi-linear description of elastic waves in an O-Si-O chain. It is shown that the main features observed in the range 400-1400 cm -1 can be predicted using a quasi-linear chain model in which the band at 1070 cm -1 is assigned to the longitudinal optical waves in the O-Si-O chain with the smallest possible wavelength at the Brillouin zone boundary, the band located around 450 cm -1 is assigned to the transversal optical waves and the band at 800 cm -1 to the longitudinal acoustical waves with the same wavelength. The degree of structural disorder can be also deduced within the framework of the proposed model. (Author)

  7. Ultrathin Microporous SiO2 Membranes Photodeposited on Hydrogen Evolving Catalysts Enabling Overall Water Splitting

    KAUST Repository

    Bau, Jeremy A.

    2017-10-17

    Semiconductor systems for photocatalytic overall water splitting into H2 and O2 gases typically require metal cocatalyst particles, such as Pt, to efficiently catalyze H2 evolution. However, such metal catalyst surfaces also serve as recombination sites for H2 and O2, forming H2O. We herein report the photon-induced fabrication of microporous SiO2 membranes that can selectively restrict passage of O2 and larger hydrated ions while allowing penetration of protons, water, and H2. The SiO2 layers were selectively photodeposited on Pt nanoparticles on SrTiO3 photocatalyst by using tetramethylammonium (TMA) as a structure-directing agent (SDA), resulting in the formation of core–shell Pt@SiO2 cocatalysts. The resulting photocatalyst exhibited both improved overall water splitting performance under irradiation and with no H2/O2 recombination in the dark. The function of the SiO2 layers was investigated electrochemically by fabricating the SiO2 layers on a Pt electrode via an analogous cathodic deposition protocol. The uniform, dense, yet amorphous layers possess microporosity originating from ring structures formed during the hydrolysis of the silicate precursor in the presence of TMA, suggesting a double-role for TMA in coordinating silicate to cathodic surfaces and in creating a microporous material. The resulting layers were able to function as a molecular sieve, allowing for exclusive H2 generation while excluding unwanted side reactions by O2 or ferricyanide. The SiO2 layer is stable for extended periods of time in photocatalytic conditions, demonstrating promise as a nontoxic material for selective H2 evolution.

  8. Ultrathin Microporous SiO2 Membranes Photodeposited on Hydrogen Evolving Catalysts Enabling Overall Water Splitting

    KAUST Repository

    Bau, Jeremy A.; Takanabe, Kazuhiro

    2017-01-01

    Semiconductor systems for photocatalytic overall water splitting into H2 and O2 gases typically require metal cocatalyst particles, such as Pt, to efficiently catalyze H2 evolution. However, such metal catalyst surfaces also serve as recombination sites for H2 and O2, forming H2O. We herein report the photon-induced fabrication of microporous SiO2 membranes that can selectively restrict passage of O2 and larger hydrated ions while allowing penetration of protons, water, and H2. The SiO2 layers were selectively photodeposited on Pt nanoparticles on SrTiO3 photocatalyst by using tetramethylammonium (TMA) as a structure-directing agent (SDA), resulting in the formation of core–shell Pt@SiO2 cocatalysts. The resulting photocatalyst exhibited both improved overall water splitting performance under irradiation and with no H2/O2 recombination in the dark. The function of the SiO2 layers was investigated electrochemically by fabricating the SiO2 layers on a Pt electrode via an analogous cathodic deposition protocol. The uniform, dense, yet amorphous layers possess microporosity originating from ring structures formed during the hydrolysis of the silicate precursor in the presence of TMA, suggesting a double-role for TMA in coordinating silicate to cathodic surfaces and in creating a microporous material. The resulting layers were able to function as a molecular sieve, allowing for exclusive H2 generation while excluding unwanted side reactions by O2 or ferricyanide. The SiO2 layer is stable for extended periods of time in photocatalytic conditions, demonstrating promise as a nontoxic material for selective H2 evolution.

  9. SiO2 Antireflection Coatings Fabricated by Electron-Beam Evaporation for Black Monocrystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Minghua Li

    2014-01-01

    Full Text Available In this work we prepared double-layer antireflection coatings (DARC by using the SiO2/SiNx:H heterostructure design. SiO2 thin films were deposited by electron-beam evaporation on the conventional solar cell with SiNx:H single-layer antireflection coatings (SARC, while to avoid the coverage of SiO2 on the front side busbars, a steel mask was utilized as the shelter. The thickness of the SiNx:H as bottom layer was fixed at 80 nm, and the varied thicknesses of the SiO2 as top layer were 105 nm and 122 nm. The results show that the SiO2/SiNx:H DARC have a much lower reflectance and higher external quantum efficiency (EQE in short wavelengths compared with the SiNx:H SARC. A higher energy conversion efficiency of 17.80% was obtained for solar cells with SiO2 (105 nm/SiNx:H (80 nm DARC, an absolute conversion efficiency increase of 0.32% compared with the conventional single SiNx:H-coated cells.

  10. Crystal structure of LT GaAs layers before and after annealing

    International Nuclear Information System (INIS)

    Litiental-Weber, Z.

    1992-01-01

    In this paper the structural quality of GaAs layers grown at low temperatures by solid-source and gas-source MBE at different growth conditions is described. Dependence on the growth temperature and concentration of As [expressed at As/Ga beam equivalent pressure (BEP)] used for the growth is discussed. A higher growth temperature is required top obtain the same monocrystalling layer thickness with increased BEP. The annealing of these layers is associated with the formation of As precipitates. Semicoherent precipitates with lowest formation energies are formed in the monocrystalline parts of the layers grown with the lowest BEP. Precipitates with higher formation energies are formed when higher BEP is applied; they are also formed in the vicinity of structural defects. Formation of As precipitates releases strain in the layers. Arsenic precipitates are not formed in annealed ternary (InAlAs) layers despite their semi-insulating properties. The role of As precipitates in semi-insulating properties and the short lifetime of minority carriers in these layers is discussed

  11. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

    Science.gov (United States)

    Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

    2017-01-03

    Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

  12. Diffusion limited Cu and Au nanocrystal formation in thin film SiO2

    International Nuclear Information System (INIS)

    Johannessen, B.; Kluth, P.; Glover, C.J.; Foran, G.J.; Ridgway, M.C.

    2006-01-01

    Elemental Cu and Au nanocrystals (NCs) were produced by high-energy ion-implantations into amorphous silica (SiO 2 ) and subsequent thermal annealing. By a combination of X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) we confirm both NC species to have the bulk face-centered cubic phase and estimate their average diameter. We concentrate on the investigation of the concentration and size-dependent coordination number (China) of these matrix embedded NCs utilising extended X-ray absorption fine structure (EXAFS) spectroscopy. The CN is found to be suppressed compared to that of a bulk standard. The CN in Au NCs is found to be lower than that of Cu NCs in agreement with smaller average Au NC sizes. We explain this difference by the difference in diffusivity for the two atomic species in SiO 2

  13. CoFe Layers Thickness and Annealing Effect on the Magnetic Behavior of the CoFe/Cu Multilayer Nanowires

    Directory of Open Access Journals (Sweden)

    M. Ahmadzadeh

    2015-04-01

    Full Text Available CoFe/Cu multilayer nanowires were electrodeposited into anodic aluminum oxide templates prepared by a two-step mild anodization method, using the single-bath technique. Nanowires with 30 nm diameter and the definite lengths were obtained. The effect of CoFe layers thickness and annealing on the magnetic behavior of the multilayer nanowires was investigated. The layers thickness was controlled through the pulses numbers: 200, 260, 310,360 and 410 pulses were used to deposit the CoFe layers, while 300 pulse for the Cu layers. A certain increase in coercivity and squareness of CoFe/Cu multilayer nanowires observed with increasing the CoFe layer thickness and annealing improved the coercivity and decrease squareness of CoFe/Cu multilayer nanowires. First order reversal curves after annealed showed amount domains with soft magnetic phase, it also shows decreasing spreading of distribution function along the Hu axis after annealed

  14. Synergetic scattering of SiO2 and Ag nanoparticles for light-trapping enhancement in organic bulk heterojunction

    Science.gov (United States)

    Yang, Huan; Ding, Qiuyu; Li, Ben Q.; Jiang, Xinbing; Zhang, Manman

    2018-02-01

    Though noble metal nanoparticles have been explored to enhance the performance of the organic solar cell, effect of dielectric nanoparticles, and coupled effect of dielectric and metal nanoparticles, have rarely been reported, if at all, on organic solar cell. This work reports an experimental study on synergetic scattering of SiO2 and Ag nanoparticles in a bulk organic heterojunction for the broadband light absorption enhancement. The wavelength scale SiO2 particles were arranged as a monolayer on the surface of the solar cell to guide incident light into the active layer and prolong the effective optical length of the entered energy. This is achieved by the excitation of whispering gallery modes in SiO2 nanoparticles and by leaky mode radiation. When small size Ag particles were incorporated into the transport layer of the solar cell, synergetic scattering of SiO2 and Ag nanoparticles is formed by coupling of the whispering gallery mode of closely arranged SiO2 particles atop and collaborative localized surface plasma resonance scattering of Ag nanoparticles dispersed in the transport layer. As a result, the performance of the organic solar cell is greatly enhanced and the short-circuit current density has an improvement of 42.47%. Therefore, the organic solar cell incorporated with SiO2 and Ag particles presents a meaningful strategy to achieve high energy-harvesting performance. [Figure not available: see fulltext.

  15. Mechanical characterization of 'uncoated' and 'Ta2O5-single-layer-coated' SiO2 substrates: results from GeNS suspension, and the CoaCh project

    Science.gov (United States)

    Cesarini, E.; Prato, M.; Lorenzini, M.; Cagnoli, G.; Campagna, E.; Canepa, M.; Chincarini, A.; Gemme, G.; Losurdo, G.; Martelli, F.; Piergiovanni, F.; Vetrano, F.

    2010-04-01

    Thermal noise of the mirrors limits the sensitivity of interferometric gravitational-wave detectors in the frequency range between 50 and 300 Hz. According to the fluctuation-dissipation theorem, the thermal noise amplitude is proportional to the mechanical loss of the mirrors. Fused silica substrates loss angle widely ranges from 10-9 to 10-6, while for the coating it is around 10-4. Loss angle measurements in ultra low mechanical loss materials are normally affected by a large systematic error due to the excess losses introduced by the suspension system used to hold the samples. An innovative measurement system Gentle Nodal Suspension, where the disk-shaped sample is suspended in equilibrium on the top of a sphere, touching one of the nodal points of vibration, has been developed in INFN Florence Virgo laboratory. The advantages of this system are as follows: (i) the good reproducibility of loss angle measurements; (ii) one surface only (in any case uncoated) of the sample is touched; (iii) the contact surface is minimized because of the absence of applied forces. This suspension has been used to characterize annealing and coating deposition effects on the mechanical quality factor Q. An interesting comparison/analysis of these effects on mechanical, optical, chemical and surface properties using spectroscopic ellipsometry, x-ray photoelectron spectroscopy and atomic force microscopy has been carried out.

  16. Mechanical characterization of 'uncoated' and 'Ta2O5-single-layer-coated' SiO2 substrates: results from GeNS suspension, and the CoaCh project

    International Nuclear Information System (INIS)

    Cesarini, E; Campagna, E; Martelli, F; Piergiovanni, F; Vetrano, F; Prato, M; Canepa, M; Chincarini, A; Gemme, G; Lorenzini, M; Cagnoli, G; Losurdo, G

    2010-01-01

    Thermal noise of the mirrors limits the sensitivity of interferometric gravitational-wave detectors in the frequency range between 50 and 300 Hz. According to the fluctuation-dissipation theorem, the thermal noise amplitude is proportional to the mechanical loss of the mirrors. Fused silica substrates loss angle widely ranges from 10 -9 to 10 -6 , while for the coating it is around 10 -4 . Loss angle measurements in ultra low mechanical loss materials are normally affected by a large systematic error due to the excess losses introduced by the suspension system used to hold the samples. An innovative measurement system Gentle Nodal Suspension, where the disk-shaped sample is suspended in equilibrium on the top of a sphere, touching one of the nodal points of vibration, has been developed in INFN Florence Virgo laboratory. The advantages of this system are as follows: (i) the good reproducibility of loss angle measurements; (ii) one surface only (in any case uncoated) of the sample is touched; (iii) the contact surface is minimized because of the absence of applied forces. This suspension has been used to characterize annealing and coating deposition effects on the mechanical quality factor Q. An interesting comparison/analysis of these effects on mechanical, optical, chemical and surface properties using spectroscopic ellipsometry, x-ray photoelectron spectroscopy and atomic force microscopy has been carried out.

  17. Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing

    International Nuclear Information System (INIS)

    Hong, David; Chiang, Hai Q.; Presley, Rick E.; Dehuff, Nicole L.; Bender, Jeffrey P.; Park, Cheol-Hee; Wager, John F.; Keszler, Douglas A.

    2006-01-01

    A novel deposition methodology is employed for exploratory development of a class of high-performance transparent thin-film transistor (TTFT) channel materials involving oxides composed of heavy-metal cations with (n - 1)d 10 ns 0 (n ≥ 4) electronic configurations. The method involves sequential radio-frequency sputter deposition of thin, single cation oxide layers and subsequent post-deposition annealing in order to obtain a multi-component oxide thin film. The viability of this rapid materials development methodology is demonstrated through the realization of high-performance TTFTs with channel layers composed of zinc oxide/tin oxide, and tin oxide/indium oxide

  18. Layer-controllable graphene by plasma thinning and post-annealing

    Science.gov (United States)

    Zhang, Lufang; Feng, Shaopeng; Xiao, Shaoqing; Shen, Gang; Zhang, Xiumei; Nan, Haiyan; Gu, Xiaofeng; Ostrikov, Kostya (Ken)

    2018-05-01

    The electronic structure of graphene depends crucially on its layer number and therefore engineering the number of graphene's atomic stacking layers is of great importance for the preparation of graphene-based devices. In this paper, we demonstrated a relatively less invasive, high-throughput and uniform large-area plasma thinning of graphene based on direct bombardment effect of fast-moving ionic hydrogen or argon species. Any desired number of graphene layers including trilayer, bilayer and monolayer can be obtained. Structural changes of graphene layers are studied by optical microscopy, Raman spectroscopy and atomic force microscopy. Post annealing is adopted to self-heal the lattice defects induced by the ion bombardment effect. This plasma etching technique is efficient and compatible with semiconductor manufacturing processes, and may find important applications for graphene-based device fabrication.

  19. Microstructure and magnetic properties of FePt:Ag nanocomposite films on SiO2/Si(1 0 0)

    International Nuclear Information System (INIS)

    Wang Hao; Yang, F.J.; Wang, H.B.; Cao, X.; Xue, S.X.; Wang, J.A.; Gao, Y.; Huang, Z.B.; Yang, C.P.; Chiah, M.F.; Cheung, W.Y.; Wong, S.P.; Li, Q.; Li, Z.Y.

    2006-01-01

    FePt:Ag nanocomposite films were prepared by pulsed filtered vacuum arc deposition system and subsequent rapid thermal annealing on SiO 2 /Si(1 0 0) substrates. The microstructure and magnetic properties were investigated. A strong dependence of coercivity and ordering of the face-central tetragonal structure on both Ag concentration and annealing temperature was observed. With Ag concentration of 22% in atomic ratio, the coercivity got to 6.0 kOe with a grain size of 6.7 nm when annealing temperature was 400 deg. C

  20. Hard magnetic properties of rapidly annealed NdFeB thin films on Nb and V buffer layers

    International Nuclear Information System (INIS)

    Jiang, H.; Evans, J.; O'Shea, M.J.; Du Jianhua

    2001-01-01

    NdFeB thin films of the form A (20 nm)/NdFeB(d nm)/A(20 nm), where d ranges from 54 to 540 nm and the buffer layer A is Nb or V were prepared on a Si(1 0 0) substrate by magnetron sputtering. The hard Nd 2 Fe 14 B phase is formed by a 30 s rapid anneal or a 20 min anneal. Average crystallite size ranged from 20 to 35 nm with the rapidly annealed samples having the smaller crystallite size. These samples also exhibited a larger coercivity and energy product than those treated by a 20 min vacuum anneal. A maximum coercivity of 26.3 kOe at room temperature was obtained for a Nb/NdFeB (180 nm)/Nb film after a rapid anneal at 725 deg. C. Initial magnetization curves indicate magnetization rotation rather than nucleation of reverse domains is important in the magnetization process. A Brown's equation analysis of the coercivity as a function of temperature allowed us to compare the rapidly annealed and 20 min annealed samples. This analysis suggests that rapid annealing gives higher quality crystalline grains than the 20 min annealed sample leading to the observed large coercivity in the rapidly annealed samples

  1. Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

    International Nuclear Information System (INIS)

    Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

    2012-01-01

    In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

  2. Impact of annealing treatment before buffer layer deposition on Cu2ZnSn(S,Se)4 solar cells

    International Nuclear Information System (INIS)

    Hironiwa, Daisuke; Sakai, Noriyuki; Kato, Takuya; Sugimoto, Hiroki; Tang, Zeguo; Chantana, Jakapan; Minemoto, Takashi

    2015-01-01

    Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells were fabricated with an annealing treatment before the deposition of buffer layers to improve their photovoltaic performance. The CZTSSe absorbers were produced by sulfurization and selenization of metallic precursors. The efficiency of the solar cells increased from 5.5% without the annealing treatment to 8.8% with the annealing treatment at a temperature of 200 °C before buffer layer fabrication. Photoluminescence (PL) measurements revealed that the density of defects in the CZTSSe absorber that acted as non-radiative recombination centers decreased with the annealing treatment. The PL peak intensity exhibited a linear relationship with the open circuit voltage and the fill factor. In addition, the carrier density and hole mobility of the CZTSSe absorbers, which were respectively investigated by capacitance-voltage and Hall effect measurements, increased with the annealing treatment, thus improving cell performance. - Highlights: • Cu 2 ZnSn(S,Se) 4 is fabricated by sulfurization and selenization. • The annealing treatment can effectively improve the cell performance. • The defect acting as recombination is decreased by annealing treatment. • Carrier density and hole mobility is increased by annealing treatment

  3. Rapid Hydrothermal Synthesis of Zinc Oxide Nanowires by Annealing Methods on Seed Layers

    Directory of Open Access Journals (Sweden)

    Jang Bo Shim

    2011-01-01

    Full Text Available Well-aligned zinc oxide (ZnO nanowire arrays were successfully synthesized on a glass substrate using the rapid microwave heating process. The ZnO seed layers were produced by spinning the precursor solutions onto the substrate. Among coatings, the ZnO seed layers were annealed at 100°C for 5 minutes to ensure particle adhesion to the glass surface in air, nitrogen, and vacuum atmospheres. The annealing treatment of the ZnO seed layer was most important for achieving the high quality of ZnO nanowire arrays as ZnO seed nanoparticles of larger than 30 nm in diameter evolve into ZnO nanowire arrays. Transmission electron microscopy analysis revealed a single-crystalline lattice of the ZnO nanowires. Because of their low power (140 W, low operating temperatures (90°C, easy fabrication (variable microwave sintering system, and low cost (90% cost reduction compared with gas condensation methods, high quality ZnO nanowires created with the rapid microwave heating process show great promise for use in flexible solar cells and flexible display devices.

  4. Optimization of urea-EnFET based on Ta2O5 layer with post annealing.

    Science.gov (United States)

    Lue, Cheng-En; Yu, Ting-Chun; Yang, Chia-Ming; Pijanowska, Dorota G; Lai, Chao-Sung

    2011-01-01

    In this study, the urea-enzymatic field effect transistors (EnFETs) were investigated based on pH-ion sensitive field effect transistors (ISFETs) with tantalum pentoxide (Ta(2)O(5)) sensing membranes. In addition, a post N(2) annealing was used to improve the sensing properties. At first, the pH sensitivity, hysteresis, drift, and light induced drift of the ISFETs were evaluated. After the covalent bonding process and urease immobilization, the urea sensitivity of the EnFETs were also investigated and compared with the conventional Si(3)N(4) sensing layer. The ISFETs and EnFETs with annealed Ta(2)O(5) sensing membranes showed the best responses, including the highest pH sensitivity (56.9 mV/pH, from pH 2 to pH 12) and also corresponded to the highest urea sensitivity (61 mV/pC(urea), from 1 mM to 7.5 mM). Besides, the non-ideal factors of pH hysteresis, time drift, and light induced drift of the annealed samples were also lower than the controlled Ta(2)O(5) and Si(3)N(4) sensing membranes.

  5. Optimization of Urea-EnFET Based on Ta2O5 Layer with Post Annealing

    Directory of Open Access Journals (Sweden)

    Chao-Sung Lai

    2011-04-01

    Full Text Available In this study, the urea-enzymatic field effect transistors (EnFETs were investigated based on pH-ion sensitive field effect transistors (ISFETs with tantalum pentoxide (Ta2O5 sensing membranes. In addition, a post N2 annealing was used to improve the sensing properties. At first, the pH sensitivity, hysteresis, drift, and light induced drift of the ISFETs were evaluated. After the covalent bonding process and urease immobilization, the urea sensitivity of the EnFETs were also investigated and compared with the conventional Si3N4 sensing layer. The ISFETs and EnFETs with annealed Ta2O5 sensing membranes showed the best responses, including the highest pH sensitivity (56.9 mV/pH, from pH 2 to pH 12 and also corresponded to the highest urea sensitivity (61 mV/pCurea, from 1 mM to 7.5 mM. Besides, the non-ideal factors of pH hysteresis, time drift, and light induced drift of the annealed samples were also lower than the controlled Ta2O5 and Si3N4 sensing membranes.

  6. Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Broas, Mikael, E-mail: mikael.broas@aalto.fi; Vuorinen, Vesa [Department of Electrical Engineering and Automation, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sippola, Perttu; Pyymaki Perros, Alexander; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sajavaara, Timo [Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014 Jyväskylä (Finland); Paulasto-Kröckel, Mervi [Department of Electrical Engineering and Automation, Aalto University. P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland)

    2016-07-15

    Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N{sub 2}:H{sub 2} plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.

  7. Fabrication of graphene oxide decorated with Fe3O4@SiO2 for immobilization of cellulase

    Science.gov (United States)

    Li, Yue; Wang, Xiang-Yu; Jiang, Xiao-Ping; Ye, Jing-Jing; Zhang, Ye-Wang; Zhang, Xiao-Yun

    2015-01-01

    Fe3O4@SiO2-graphene oxide (GO) composites were successfully fabricated by chemical binding of functional Fe3O4@SiO2 and GO and applied to immobilization of cellulase via covalent attachment. The prepared composites were further characterized by transmission electron microscopy and Fourier transform infrared spectroscopy. Fe3O4 nanoparticles (NPs) were monodisperse spheres with a mean diameter of 17 ± 0.2 nm. The thickness of SiO2 layer was calculated as being 6.5 ± 0.2 nm. The size of Fe3O4@SiO2 NPs was 24 ± 0.3 nm, similar to that of Fe3O4@SiO2-NH2. Fe3O4@SiO2-GO composites were synthesized by linking of Fe3O4@SiO2-NH2 NPs to GO with the catalysis of EDC and NHS. The prepared composites were used for immobilization of cellulase. A high immobilization yield and efficiency of above 90 % were obtained after the optimization. The half-life of immobilized cellulase (722 min) was 3.34-fold higher than that of free enzyme (216 min) at 50 °C. Compared with the free cellulase, the optimal temperature of the immobilized enzyme was not changed; but the optimal pH was shifted from 5.0 to 4.0, and the thermal stability was enhanced. The immobilized cellulase could be easily separated and reused under magnetic field. These results strongly indicate that the cellulase immobilized onto the Fe3O4@SiO2-GO composite has potential applications in the production of bioethanol.

  8. Fabrication of graphene oxide decorated with Fe3O4@SiO2 for immobilization of cellulase

    International Nuclear Information System (INIS)

    Li, Yue; Wang, Xiang-Yu; Jiang, Xiao-Ping; Ye, Jing-Jing; Zhang, Ye-Wang; Zhang, Xiao-Yun

    2015-01-01

    Fe 3 O 4 @SiO 2 –graphene oxide (GO) composites were successfully fabricated by chemical binding of functional Fe 3 O 4 @SiO 2 and GO and applied to immobilization of cellulase via covalent attachment. The prepared composites were further characterized by transmission electron microscopy and Fourier transform infrared spectroscopy. Fe 3 O 4 nanoparticles (NPs) were monodisperse spheres with a mean diameter of 17 ± 0.2 nm. The thickness of SiO 2 layer was calculated as being 6.5 ± 0.2 nm. The size of Fe 3 O 4 @SiO 2 NPs was 24 ± 0.3 nm, similar to that of Fe 3 O 4 @SiO 2 –NH 2 . Fe 3 O 4 @SiO 2 –GO composites were synthesized by linking of Fe 3 O 4 @SiO 2 –NH 2 NPs to GO with the catalysis of EDC and NHS. The prepared composites were used for immobilization of cellulase. A high immobilization yield and efficiency of above 90 % were obtained after the optimization. The half-life of immobilized cellulase (722 min) was 3.34-fold higher than that of free enzyme (216 min) at 50 °C. Compared with the free cellulase, the optimal temperature of the immobilized enzyme was not changed; but the optimal pH was shifted from 5.0 to 4.0, and the thermal stability was enhanced. The immobilized cellulase could be easily separated and reused under magnetic field. These results strongly indicate that the cellulase immobilized onto the Fe 3 O 4 @SiO 2 –GO composite has potential applications in the production of bioethanol

  9. Changes in structure and phase composition of chromium diffusion layer on stainless steels after long annealing

    International Nuclear Information System (INIS)

    Knyazev, E.V.; Voshedchenko, B.M.; Voskresenskij, Yu.A.

    1985-01-01

    A study was made on the effect of elevated temperatures UU and long holdings at heat on structure, phase composition and properties of chromium diffusion layer on austenitic chromium-nickel stainless steels 10Kh18N10TVD, 10Kh15N30M4B, 10Kh11N23T3MR, 10Kh21N28V6M3. The following mechanism of processes taking place in diffusion chromium layer is presented. The steady drop of chromium concentrations is observed after diffusion saturation. Chromium redistribution related with system transformation to more equilibrium state and simultaneous decarburization of steel surfaces takes place in diffusion layers of 10Kh15N30M4B and 10Kh21N28V6M3 steels after annealing at different temperatures and holdings at heat. Decarburization of steel surface layers is practically excluded in diffusion layers of 10Kh18N10T-VD and 10Kh11N23T3MR steels. Diffusion chromium-saturated layer stays effective only on 10Kh18N10T-VD and 10Kh11N23T3MR steels on heating up to 1000 deq C with holding up to 250 h

  10. Experimental observations of the chemistry of the SiO2/Si interface

    Science.gov (United States)

    Grunthaner, F. J.; Maserjian, J.

    1977-01-01

    Changes in silicon surface preparation prior to thermal oxidation are shown to leave a signature by altering the final SiO2/Si interface structure. Surface analytical techniques, including XPS, static SIMS, ion milling, and newly developed wet-chemical profiling procedures are used to obtain detailed information on the chemical structure of the interface. The oxides are shown to be essentially SiO2 down to a narrow transitional interface layer (3-7 A). A number of discrete chemical species are observed in this interface layer, including different silicon bonds (e.g., C-, OH-, H-) and a range of oxidation states of silicon (0 to +4). The effect of surface preparation and the observed chemical species are correlated with oxide growth rate, surface-state density, and flatband shifts after irradiation.

  11. Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

    Energy Technology Data Exchange (ETDEWEB)

    Laube, J., E-mail: laube@imtek.de; Nübling, D.; Beh, H.; Gutsch, S.; Hiller, D.; Zacharias, M.

    2016-03-31

    Conductive zinc oxide (ZnO) films deposited by atomic layer deposition were studied as function of post-annealing treatments. Effusion experiments were conducted on ZnO films deposited at different temperatures. The influence of different annealing atmospheres on the resistivity of the films was investigated and compared to reference samples. It was found that the influence of the deposition temperature on the resistivity is much higher than that of subsequent annealings. This leads to the conclusion that reduction of the resistivity by diffusion of different gases, such as oxygen and hydrogen, into annealed ZnO films is unlikely. - Highlights: • Conformal growth of ZnO-ALD over a temperature range of 25 °C up to 300 °C. • Post-annealing in different atmospheres (H{sub 2}, O{sub 2}, vacuum) and temperatures. • Analysis of film-conductivity and effusion characteristic.

  12. Positron mobility in thermally grown SiO2 measured by Doppler broadening technique

    International Nuclear Information System (INIS)

    Kong, Y.; Leung, T.C.; Asoka-Kumar, P.; Nielsen, B.; Lynn, K.G.

    1991-01-01

    The positron mobility in thermally grown SiO 2 is deduced from Doppler broadening lineshape data on a metal-oxide-semiconductor sample for positrons implanted into the oxide layer. The fitted mobility is ∼13(10)x10 -3 cm 2 /s V. This value is between that of the electron and hole mobilities in the same system and is two orders of magnitude smaller than the previous estimate from positron measurements

  13. Thermal Annealing Effect on Poly(3-hexylthiophene: Fullerene:Copper-Phthalocyanine Ternary Photoactive Layer

    Directory of Open Access Journals (Sweden)

    H. Derouiche

    2013-01-01

    Full Text Available We have fabricated poly(3-hexylthiophene (P3HT/copper phthalocyanine (CuPc/fullerene (C60 ternary blend films. This photoactive layer is sandwiched between an indium tin oxide (ITO/poly(3,4-ethylenedioxythiophene:poly(styrene sulfonate (PEDOT/PSS photoanode and a bathocuproine (BCP/aluminium photocathode. The thin films have been characterized by atomic force microscope (AFM and ultraviolet/visible spectroscopy in order to study the influence of P3HT doping on the morphological and optical properties of the photoactive layer. We have also compared the characteristics of three different organic solar cells: ITO/PEDOT:PSS/CuPc0.5:C600.5/BCP/Al and ITO/PEDOT:PSS/P3HT0.3:CuPc0.3:C600.4/BCP/Al with and without annealing. Both structures show good photovoltaic behaviour. Indeed, the incorporation of P3HT into CuPc:C60 thin film improves all the photovoltaic characteristics. We have also seen that thermal annealing significantly improves the optical absorption ability and stabilizes the organic solar cells making it more robust to chemical degradation.

  14. Nonlocal laser annealing to improve thermal contacts between multi-layer graphene and metals

    International Nuclear Information System (INIS)

    Ermakov, Victor A; Alaferdov, Andrei V; Vaz, Alfredo R; Moshkalev, Stanislav A; Baranov, Alexander V

    2013-01-01

    The accuracy of thermal conductivity measurements by the micro-Raman technique for suspended multi-layer graphene flakes has been shown to depend critically on the quality of the thermal contacts between the flakes and the metal electrodes used as the heat sink. The quality of the contacts can be improved by nonlocal laser annealing at increased power. The improvement of the thermal contacts to initially rough metal electrodes is attributed to local melting of the metal surface under laser heating, and increased area of real metal–graphene contact. Improvement of the thermal contacts between multi-layer graphene and a silicon oxide surface was also observed, with more efficient heat transfer from graphene as compared with the graphene–metal case. (paper)

  15. The investigation of influence of accelerated electrons on SiO2 used in silicon solar cells

    International Nuclear Information System (INIS)

    Abdullaev, G.B.; Bakirov, M.Ya; Akhmedov, G.M.; Safarov, N.A.; Safarova, F.D.

    1994-01-01

    The process of radiation defects production in enlightened SiO 2 layers coated on silicon solar cells was studied. During irradiation the silicon solar cells with enlightened layers radiation defects are formed both in silicon and SiO 2 thus making worse photo energetic parameters of cells. For investigation of radiation effects formed under irradiation by electrons with 5 MeV energy and cobalt-60 gamma-rays photoluminescence, absorption spectra and electron spin resonance methods were used. It is supposed that main radiation defects in silicon dioxide are E'-centers and oxygen vacancies. (A.D. Avezov). 10 refs.; 2 figs

  16. Location of trapped charge in aluminum-implanted SiO2

    International Nuclear Information System (INIS)

    DiMaria, D.J.; Young, D.R.; Hunter, W.R.; Serrano, C.M.

    1978-01-01

    The position of the centroid of electrons trapped on sites resulting from aluminum implantation into SiO 2 is measured by using the photo I-V technique for energies from 15 to 40 keV, oxide thicknesses from 49 to 140 nm, and post-implant annealing temperature from 600 to 1050 0 C in N 2 for 30 min. The centroid of the trapped electrons is found to be identical to that of the implanted aluminum from SIMS measurements, regardless of annealing temperature from 600 to 1050 0 C, and located closer (by less than 9 nm) to the Al--SiO 2 interface than predicted from the Lindhard-Scharff-Schott (LSS) calculations of Gibbons, Johnson, and Mylroie. Comparison of centroids determined from photo I-V and SIMS measurements as a function of SiO 2 thickness also implies that the distributions of the ions and negative trapped charge are the same. The trapping behavior of these sites is discussed in the accompanying paper by Young et al

  17. Improving Passivation Process of Si Nano crystals Embedded in SiO2 Using Metal Ion Implantation

    International Nuclear Information System (INIS)

    Bornacelli, J.; Esqueda, J.A.R.; Fernandez, L.R.; Oliver, A.

    2013-01-01

    We studied the photoluminescence (PL) of Si nano crystals (Si-NCs) embedded in SiO 2 obtained by ion implantation at MeV energy. The Si-NCs are formed at high depth (1-2 μm) inside the SiO 2 achieving a robust and better protected system. After metal ion implantation (Ag or Au), and a subsequent thermal annealing at 600°C under hydrogen-containing atmosphere, the PL signal exhibits a noticeable increase. The ion metal implantation was done at energies such that its distribution inside the silica does not overlap with the previously implanted Si ion . Under proper annealing Ag or Au nanoparticles (NPs) could be nucleated, and the PL signal from Si-NCs could increase due to plasmonic interactions. However, the ion-metal-implantation-induced damage can enhance the amount of hydrogen, or nitrogen, that diffuses into the SiO 2 matrix. As a result, the surface defects on Si-NCs can be better passivated, and consequently, the PL of the system is intensified. We have selected different atmospheres (air, H 2 /N 2 and Ar) to study the relevance of these annealing gases on the final PL from Si-NCs after metal ion implantation. Studies of PL and time-resolved PL indicate that passivation process of surface defects on Si-NCs is more effective when it is assisted by ion metal implantation.

  18. Photoluminescent characteristics of ion beam synthesized Ge nanoparticles in thermally grown SiO2 films

    International Nuclear Information System (INIS)

    Yu, C.F.; Chao, D.S.; Chen, Y.-F.; Liang, J.H.

    2013-01-01

    Prospects of developing into numerous silicon-based optoelectronic applications have prompted many studies on the optical properties of Ge nanoparticles within a silicon oxide (SiO 2 ) matrix. Even with such abundant studies, the fundamental mechanism underlying the Ge nanoparticle-induced photoluminescence (PL) is still an open question. In order to elucidate the mechanism, we dedicate this study to investigating the correlation between the PL properties and microstructure of the Ge nanoparticles synthesized in thermally grown SiO 2 films. Our spectral data show that the peak position, at ∼3.1 eV or 400 nm, of the PL band arising from the Ge nanoparticles was essentially unchanged under different Ge implantation fluences and the temperatures of the following annealing process, whereas the sample preparation parameters modified or even fluctuated (in the case of the annealing temperature) the peak intensity considerably. Given the microscopically observed correlation between the nanoparticle structure and the sample preparation parameters, this phenomenon is consistent with the mechanism in which the oxygen-deficiency-related defects in the Ge/SiO 2 interface act as the major luminescence centers; this mechanism also successfully explains the peak intensity fluctuation with the annealing temperature. Moreover, our FTIR data indicate the formation of GeO x upon ion implantation. Since decreasing of the oxygen-related defects by the GeO x formation is expected to be correlated with the annealing temperature, presence of the GeO x renders further experimental support to the oxygen defect mechanism. This understanding may assist the designing of the manufacturing process to optimize the Ge nanoparticle-based PL materials for different technological applications

  19. Electronic and surface properties of pentacene films deposited on SiO2 prepared by the sol–gel and thermally grown methods

    International Nuclear Information System (INIS)

    Dai, Chi-Jie; Tsao, Hou-Yen; Lin, Yow-Jon; Liu, Day-Shan

    2014-01-01

    This study investigates the effect of different types of SiO 2 on the electronic and surface properties of pentacene films. Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. The water contact angle variation indicates more hydrophobic thermally grown SiO 2 surfaces than sol–gel SiO 2 surfaces, suggesting that the thermally grown SiO 2 dielectric enables a better molecular arrangement as the pentacene layer is deposited. It is found that the carrier mobility in pentacene on thermally grown SiO 2 dielectrics is higher than that in pentacene on sol–gel SiO 2 dielectrics. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the increased spacing between molecules. - Highlights: • The carrier mobility of pentacene on thermally grown and sol–gel SiO 2 was researched. • The enhanced carrier mobility of pentacene on thermally grown SiO2 was observed. • The dominance of tunneling (hopping) at low (high) temperatures was observed. • The carrier mobility is correlated with the morphology of pentacene films

  20. Formation and electrical characteristics of silicon dioxide layers by use of nitric acid oxidation method

    International Nuclear Information System (INIS)

    Imal, S.; Takahashi, M.; Matsuba, K.; Asuha; Ishikawa, Y.; Kobayashi, Hikaru

    2005-01-01

    SiO 2 /Si structure can be formed at low temperatures by use of nitric acid (HNO 3 ) oxidation of Si (NAOS) method. When Si wafers are immersed in ∼ 40 wt% HNO 3 solutions at 108 deg C, ∼ 1 nm SiO 2 layers are formed. The subsequent immersion in 68 wt% HNO 3 (i.e., azeotropic mixture of HNO 3 with water) at 121 deg C increases the SiO 2 thickness. The 3,5 nm-thick SiO 2 layers produced by this two-step NAOS method possess a considerably low leakage current density (e.g. 1 x 10 2 A/cmi 2 at the forward gate bias, V G , of 1.5 V), in spite of the low temperature oxidation, and further decreased (e.g., 8 x 10 4 A/cm 2 at V G = 1.5 V) by post-metallization annealing at 250 deg C in hydrogen atmosphere. In order to increase the SiO 2 thickness, a bias voltage is applied during the NAOS method. When 10 V is applied to Si with respect to a Pt counter electrode both immersed in 1 M HNO 3 solutions at 25 deg C, SiO 2 layers with 8 nm thickness can be formed for 1 h(Authors)

  1. Laser-controlled stress of Si nanocrystals in a free-standing Si /SiO2 superlattice

    Science.gov (United States)

    Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar+ laser radiation melts Si nanocrystals in a free-standing Si /SiO2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means.

  2. The Effects of Annealing Parameters on the Crystallization and Morphology of Cu(In,GaSe2 Absorber Layers Prepared by Annealing Stacked Metallic Precursors

    Directory of Open Access Journals (Sweden)

    Chia-Ho Huang

    2014-01-01

    Full Text Available CIGS films are prepared by single-stage annealing of the solid Se-coated In/Cu-Ga bilayer precursor. The annealing processes were performed using various Ar pressures, heating rates, and soaking times. A higher Ar pressure is needed to fabricate highly crystalline CIGS films, as no extra Se-vapor source is supplied. As the heating rate increases, the surface morphologies of the CIGS films become looser and some cracks are observed. However, the influence of soaking time is insignificant and the selenization process only requires a short time when the precursors are selenized at a higher temperature with a lower heating rate and a higher Ar pressure. In this study, a dense chalcopyrite CIGS film with a thickness of about 1.5-1.6 μm, with large grains (~1.2 μm and no cracking or peeling is obtained after selenizing at a temperature of 550°C, an Ar pressure of 300 Torr, a heating rate of 60°C/min, and a soaking time of 20 min. By adequate design of the stacked precursor and controlling the annealing parameters, single-stage annealing of the solid Se-coated In/Cu-Ga bilayer precursor is simplified for the fabrication of a fully crystallized chalcopyrite CIGS absorber layers with good crystallization and large grains.

  3. Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

    International Nuclear Information System (INIS)

    Stepina, N. P.; Dvurechenskii, A. V.; Armbrister, V. A.; Kesler, V. G.; Novikov, P. L.; Gutakovskii, A. K.; Kirienko, V. V.; Smagina, Zh. V.; Groetzschel, R.

    2007-01-01

    Pulsed low-energy (200 eV) ion-beam induced nucleation during Ge deposition on thin SiO 2 film was used to form dense homogeneous arrays of Ge nanocrystals. The ion-beam action is shown to stimulate the nucleation of Ge nanocrystals when being applied after thin Ge layer deposition. Temperature and flux variation was used to optimize the nanocrystal size and array density required for memory device. Kinetic Monte Carlo simulation shows that ion impacts open an additional channel of atom displacement from a nanocrystal onto SiO 2 surface. This results both in a decrease in the average nanocrystal size and in an increase in nanocrystal density

  4. Thermally tunable VO2-SiO2 nanocomposite thin-film capacitors

    Science.gov (United States)

    Sun, Yifei; Narayanachari, K. V. L. V.; Wan, Chenghao; Sun, Xing; Wang, Haiyan; Cooley, Kayla A.; Mohney, Suzanne E.; White, Doug; Duwel, Amy; Kats, Mikhail A.; Ramanathan, Shriram

    2018-03-01

    We present a study of co-sputtered VO2-SiO2 nanocomposite dielectric thin-film media possessing continuous temperature tunability of the dielectric constant. The smooth thermal tunability is a result of the insulator-metal transition in the VO2 inclusions dispersed within an insulating matrix. We present a detailed comparison of the dielectric characteristics of this nanocomposite with those of a VO2 control layer and of VO2/SiO2 laminate multilayers of comparable overall thickness. We demonstrated a nanocomposite capacitor that has a thermal capacitance tunability of ˜60% between 25 °C and 100 °C at 1 MHz, with low leakage current. Such thermally tunable capacitors could find potential use in applications such as sensing, thermal cloaks, and phase-change energy storage devices.

  5. Anisotropic visible photoluminescence from thermally annealed few-layer black phosphorus

    Science.gov (United States)

    Zhao, Chuan; Sekhar, M. Chandra; Lu, Wei; Zhang, Chenglong; Lai, Jiawei; Jia, Shuang; Sun, Dong

    2018-06-01

    Black phosphorus, a two-dimensional material, with high carrier mobility, tunable direct bandgap and anisotropic electronic properties has attracted enormous research interest towards potential application in electronic, optoelectronic and optomechanical devices. The bandgap of BP is thickness dependent, ranging from 0.3 eV for bulk to 1.3 eV for monolayer, while lacking in the visible region, a widely used optical regime for practical optoelectronic applications. In this work, photoluminescence (PL) centered at 605 nm is observed from the thermally annealed BP with thickness ≤20 nm. This higher energy PL is most likely the consequence of the formation of higher bandgap phosphorene oxides and suboxides on the surface BP layers as a result of the enhanced rate of oxidation. Moreover, the polarization-resolved PL measurements show that the emitted light is anisotropic when the excitation polarization is along the armchair direction. However, if excited along zigzag direction, the PL is nearly isotropic. Our findings suggest that the thermal annealing of BP can be used as a convenient route to fill the visible gap of the BP-based optoelectronic and optomechanical devices.

  6. High thermal stability of abrupt SiO2/GaN interface with low interface state density

    Science.gov (United States)

    Truyen, Nguyen Xuan; Taoka, Noriyuki; Ohta, Akio; Makihara, Katsunori; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Shimizu, Mitsuaki; Miyazaki, Seiichi

    2018-04-01

    The effects of postdeposition annealing (PDA) on the interface properties of a SiO2/GaN structure formed by remote oxygen plasma-enhanced chemical vapor deposition (RP-CVD) were systematically investigated. X-ray photoelectron spectroscopy clarified that PDA in the temperature range from 600 to 800 °C has almost no effects on the chemical bonding features at the SiO2/GaN interface, and that positive charges exist at the interface, the density of which can be reduced by PDA at 800 °C. The capacitance-voltage (C-V) and current density-SiO2 electric field characteristics of the GaN MOS capacitors also confirmed the reduction in interface state density (D it) and the improvement in the breakdown property of the SiO2 film after PDA at 800 °C. Consequently, a high thermal stability of the SiO2/GaN structure with a low fixed charge density and a low D it formed by RP-CVD was demonstrated. This is quite informative for realizing highly robust GaN power devices.

  7. Sol-gel synthesis and characterization of single-phase Ni ferrite nanoparticles dispersed in SiO2 matrix

    International Nuclear Information System (INIS)

    Nadeem, K.; Traussnig, T.; Letofsky-Papst, I.; Krenn, H.; Brossmann, U.; Wuerschum, R.

    2010-01-01

    Nanoparticles of NiFe 2 O 4 dispersed in SiO 2 (25 wt%) matrix were synthesized by sol-gel method using tetraethyl orthosilicate (TEOS), as a precursor for SiO 2 . The sol-gel method for nanocomposites normally provides multi-phase nanoparticles. We investigated by a synopsis of different analysis methods, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and SQUID-magnetometry, how the various chemical phases are transformed to a single-phase spinel structure during the various stages of annealing from 300 to 900 o C. We have developed a full phase diagram of chemical phases as a function of annealing temperature. The average particle size lies in the range 16-27 nm. The chemical phases formed below 900 o C are NiFe, NiO, γ-Fe 2 O 3 , α-Fe 2 O 3 , and NiFe 2 O 4 , respectively. The role of the TEOS prepared SiO 2 matrix is to restrict the particle size in a small range in order to rule out particle size effects. In the mid-infrared, a shift of the vibrational Fe-O bond is observed from 568 to 586 cm -1 for annealing between 500 and 700 o C which indicates an increasing NiFe 2 O 4 phase formation. A systematic study of coercivity field (ranging from 32 to 200 Oe) and saturation magnetic moment (ranging from 12.2 to 32.1 emu/g) for differently annealed samples supports our findings about the evolution of single-phase NiFe 2 O 4 at 900 o C. The opposite trend of saturation magnetic moment and coercivity with respect to annealing temperature clearly separates the different phases of metallic, antiferromagnetic, and finally single-phase spinel NiFe 2 O 4 .

  8. Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

    Science.gov (United States)

    Asuha,; Kobayashi, Takuya; Maida, Osamu; Inoue, Morio; Takahashi, Masao; Todokoro, Yoshihiro; Kobayashi, Hikaru

    2002-10-01

    Chemical oxidation of Si by use of azeotrope of nitric acid and water can form 1.4-nm-thick silicon dioxide layers with a leakage current density as low as those of thermally grown SiO2 layers. The capacitance-voltage (C-V) curves for these ultrathin chemical SiO2 layers have been measured due to the low leakage current density. The leakage current density is further decreased to approx1/5 (cf. 0.4 A/cm2 at the forward gate bias of 1 V) by post-metallization annealing at 200 degC in hydrogen. Photoelectron spectroscopy and C-V measurements show that this decrease results from (i) increase in the energy discontinuity at the Si/SiO2 interface, and (ii) elimination of Si/SiO2 interface states and SiO2 gap states.

  9. Study of SiO2 surface sputtering by a 250-550 keV He+ ion beam during high-resolution Rutherford backscattering measurements

    International Nuclear Information System (INIS)

    Kusanagi, Susumu; Kobayashi, Hajime

    2006-01-01

    Decreases in oxygen signal intensities in spectra of high-resolution Rutherford backscattering spectrometry (HRBS) were observed during measurements on a 5-nm thick SiO 2 layer on a Si substrate when irradiated by 250-550 keV He + ions. Shifts in an implanted arsenic profile in a 5-nm thick SiO 2 /Si substrate were also observed as a result of He + ion irradiation. These results lead to the conclusion that the SiO 2 surface was sputtered by He + ions in this energy range

  10. Association behaviour of 241Am(III) on SiO2(amorphous) and SiO2(quartz) colloids

    International Nuclear Information System (INIS)

    Degueldre, C.; Wernli, B.

    1993-01-01

    SiO 2 colloids have been identified as a potential vector for enhancing radionuclide transport in granitic groundwater and in concrete pore water. The sorption behaviour of 241 Am(III) on SiO 2 colloids was studied as a function of americium concentration pH (5-12), colloid concentration, ionic strength, temperature and SiO 2 allotropic species. The Am(III) sorption mechanism on amorphous silica is different from that on quartz. For SiO 2(amorphous) solution, the variation of log K p (ml g -1 ) with pH is linear (pH=5-9) with a slope of +1 indicating a one proton exchange mechanism. The colloid concentration (ppm) affects the sorption and log K p 3.7-0.67 log [SiO 2 ] (pH = 6). K p increases insignificantly when the ionic strength decreases. It shows no significant variation, however, with the Am concentration. On amorphous silica, the Am(III) sorption is driven by proton exchange from the silanol groups. For SiO 2 (quartz), log K p is constant over a large range of quartz concentration in suspension and the variation of log K p with pH is about linear (pH = 5-12), with a slope of 0.28, indicating a more complex exchange mechanism. Reactions taking into account the interaction of positive Am(OH) w (3-w)+ species on to the negatively charged quartz surface are suggested. (author)

  11. Deposition of conductive TiN shells on SiO2 nanoparticles with a fluidized bed ALD reactor

    NARCIS (Netherlands)

    Didden, A.; Hillebrand, P.; Wollgarten, M.; Dam, B.; Van de Krol, R.

    2016-01-01

    Conductive TiN shells have been deposited on SiO2 nanoparticles (10–20 nm primary particle size) with fluidized bed atomic layer deposition using TDMAT and NH3 as precursors. Analysis of the powders confirms that shell growth saturates at approximately 0.4 nm/cycle at TDMAT doses of >1.2 mmol/g of

  12. Unraveling the role of SiC or Si substrates in water vapor incorporation in SiO 2 films thermally grown using ion beam analyses

    Science.gov (United States)

    Corrêa, S. A.; Soares, G. V.; Radtke, C.; Stedile, F. C.

    2012-02-01

    The incorporation of water vapor in SiO 2 films thermally grown on 6H-SiC(0 0 0 1) and on Si (0 0 1) was investigated using nuclear reaction analyses. Water isotopically enriched in deuterium ( 2H or D) and in 18O was used. The dependence of incorporated D with the water annealing temperature and initial oxide thickness were inspected. The D amount in SiO 2/SiC structures increases continuously with temperature and with initial oxide thickness, being incorporated in the surface, bulk, and interface regions of SiO 2 films. However, in SiO 2/Si, D is observed mostly in near-surface regions of the oxide and no remarkable dependence with temperature or initial oxide thickness was observed. At any annealing temperature, oxygen from water vapor was incorporated in all depths of the oxide films grown on SiC, in contrast with the SiO 2/Si.

  13. Suppression of dewetting phenomena during excimer laser melting of thin metal films on SiO2

    International Nuclear Information System (INIS)

    Kline, J.E.; Leonard, J.P.

    2005-01-01

    Pulsed excimer laser irradiation has been used to fully melt 200 nm films of elemental Au and Ni on SiO 2 substrates. With the use of a capping layer of SiO 2 and line irradiation via projection optics, the typical liquid-phase dewetting processes associated with these metals on SiO 2 has been suppressed. In a series of experiments varying line widths and fluence, a process region is revealed immediately above the complete melting threshold for which the films remain continuous and smooth after melting and resolidification. Simple energetic arguments for mechanisms leading to initiation of dewetting support these observations, and a gas-mediated model is proposed to describe the process conditions that are necessary for the suppression of dewetting

  14. Surface morphology of amorphous germanium thin films following thermal outgassing of SiO2/Si substrates

    International Nuclear Information System (INIS)

    Valladares, L. de los Santos; Dominguez, A. Bustamante; Llandro, J.; Holmes, S.; Quispe, O. Avalos; Langford, R.; Aguiar, J. Albino; Barnes, C.H.W.

    2014-01-01

    Highlights: • Annealing promotes outgassing of SiO 2 /Si wafers. • Outgassing species embed in the a-Ge film forming bubbles. • The density of bubbles obtained by slow annealing is smaller than by rapid annealing. • The bubbles explode after annealing the samples at 800 °C. • Surface migration at higher temperatures forms polycrystalline GeO 2 islands. - Abstract: In this work we report the surface morphology of amorphous germanium (a-Ge) thin films (140 nm thickness) following thermal outgassing of SiO 2 /Si substrates. The thermal outgassing was performed by annealing the samples in air at different temperatures from 400 to 900 °C. Annealing at 400 °C in slow (2 °C/min) and fast (10 °C/min) modes promotes the formation of bubbles on the surface. A cross sectional view by transmission electron microscope taken of the sample slow annealed at 400 °C reveals traces of gas species embedded in the a-Ge film, allowing us to propose a possible mechanism for the formation of the bubbles. The calculated internal pressure and number of gas molecules for this sample are 30 MPa and 38 × 10 8 , respectively. Over an area of 22 × 10 −3 cm 2 the density of bubbles obtained at slow annealing (9 × 10 3 cm −2 ) is smaller than that at rapid annealing (6.4 × 10 4 cm −2 ), indicating that the amount of liberated gas in both cases is only a fraction of the total gas contained in the substrate. After increasing the annealing temperature in the slow mode, bubbles of different diameters (from tens of nanometers up to tens of micrometers) randomly distribute over the Ge film and they grow with temperature. Vertical diffusion of the outgas species through the film dominates the annealing temperature interval 400–600 °C, whereas coalescence of bubbles caused by lateral diffusion is detected after annealing at 700 °C. The bubbles explode after annealing the samples at 800 °C. Annealing at higher temperatures, such as 900 °C, leads to surface migration of the

  15. Effects of (NH4)2S x treatment on the surface properties of SiO2 as a gate dielectric for pentacene thin-film transistor applications

    Science.gov (United States)

    Hung, Cheng-Chun; Lin, Yow-Jon

    2018-01-01

    The effect of (NH4)2S x treatment on the surface properties of SiO2 is studied. (NH4)2S x treatment leads to the formation of S-Si bonds on the SiO2 surface that serves to reduce the number of donor-like trap states, inducing the shift of the Fermi level toward the conduction band minimum. A finding in this case is the noticeably reduced value of the SiO2 capacitance as the sulfurated layer is formed at the SiO2 surface. The effect of SiO2 layers with (NH4)2S x treatment on the carrier transport behaviors for the pentacene/SiO2-based organic thin-film transistor (OTFT) is also studied. The pentacene/as-cleaned SiO2-based OTFT shows depletion-mode behavior, whereas the pentacene/(NH4)2S x -treated SiO2-based OTFT exhibits enhancement-mode behavior. Experimental identification confirms that the depletion-/enhancement-mode conversion is due to the dominance competition between donor-like trap states in SiO2 near the pentacene/SiO2 interface and acceptor-like trap states in the pentacene channel. A sulfurated layer between pentacene and SiO2 is expected to give significant contributions to carrier transport for pentacene/SiO2-based OTFTs.

  16. Diffusive charge transport in graphene on SiO 2

    Science.gov (United States)

    Chen, J.-H.; Jang, C.; Ishigami, M.; Xiao, S.; Cullen, W. G.; Williams, E. D.; Fuhrer, M. S.

    2009-07-01

    We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO 2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the effects of charged impurities and short-range scatterers. The results show that charged impurities indeed lead to a conductivity linear in density ( σ(n)∝n) in graphene, with a scattering magnitude that agrees quantitatively with theoretical estimates; increased dielectric screening reduces the scattering from charged impurities, but increases the scattering from short-range scatterers. We evaluate the effects of the corrugations (ripples) of graphene on SiO 2 on transport by measuring the height-height correlation function. The results show that the corrugations cannot mimic long-range (charged impurity) scattering effects, and have too small an amplitude-to-wavelength ratio to significantly affect the observed mobility via short-range scattering. Temperature-dependent measurements show that longitudinal acoustic phonons in graphene produce a resistivity that is linear in temperature and independent of carrier density; at higher temperatures, polar optical phonons of the SiO 2 substrate give rise to an activated, carrier density-dependent resistivity. Together the results paint a complete picture of charge carrier transport in graphene on SiO 2 in the diffusive regime.

  17. Effect of SiO2 concentration in silica sol on interface reaction during titanium alloy investment casting

    Directory of Open Access Journals (Sweden)

    Ya-meng Wei

    2018-01-01

    Full Text Available Using silica sol as a binder for titanium investment casting is very attractive due to its good stability and reasonable cost as compared with yttrium sol and zirconium sol. However, the mechanism of interface reaction in the related system remains unclear. In this investigation, the interface reaction between Y2O3-SiO2 (Y-Si shell mold and titanium alloys was studied. A group of shell molds were prepared by using Y2O3 sand and silica sol with different contents of SiO2. Ti-6Al-4V alloy was cast under vacuum by gravity casting through cold crucible induction melting (CCIM method. Scanning electron microscopy (SEM and energy dispersive x-ray spectroscopy (EDS were employed to characterize the micromorphology and composition of the reaction area, respectively. X-ray photoelectron spectroscopy (XPS was used to confirm the valence state of relevant elements. White light interferometer (WLI was used to obtain the surface topography of Y-Si shells. The results show that the thickness of reaction layers is below 3 μm when the SiO2 content of silica sol is below 20wt.%. Whereas, when the SiO2 content increases to 25wt.%, the thickness of the reaction layer increases sharply to about 15 μm. There is a good balance between chemical inertness and mechanical performance when the SiO2 content is between 15 and 20wt.%. Moreover, it was found that the distribution of SiO2 and the roughness at the surface of the shell are the key factors that determine the level of reaction.

  18. Effects of SiO2 encapsulation and laser processing on single CdTe/ZnTe quantum dots grown on Si (001) substrates

    International Nuclear Information System (INIS)

    Lee, Hong Seok; Rastelli, Armando; Schmidt, Oliver G.; Kim, Tae Whan; Lee, In Won

    2011-01-01

    Micro-photoluminescence (μ-PL) measurements are carried out to investigate the effects of SiO 2 encapsulation and laser processing of single CdTe/ZnTe quantum dots (QDs) grown on Si (001) substrates by using molecular beam epitaxy and atomic layer epitaxy. After laser processing, the μ-PL peak shift for the 200-nm SiO 2 capped single QD is larger than that of the as-grown sample. The large μ-PL peak shift in the 200-nm SiO 2 capped sample is related to the compressive stress induced by the ZnTe cap layer during laser processing. These results indicate that SiO 2 encapsulation and laser processing represent effective methods for achieving local wavelength tuning in single QDs.

  19. Strain and defect microstructure in ion-irradiated GeSi/Si strained layers as a function of annealing temperature

    International Nuclear Information System (INIS)

    Glasko, J.M.; Elliman, R.G.; Zou, J.; Cockayne, D.J.H.; Fitz Gerald, J.D.

    1998-01-01

    High energy (1 MeV), ion irradiation of GeSi/Si strained layers at elevated temperatures can cause strain relaxation. In this study, the effect of subsequent thermal annealing was investigated. Three distinct annealing stages were identified and correlated with the evolution of the defect microstructure. In the temperature range from 350 to 600 deg C, a gradual recovery of strain is observed. This is believed to result from the annealing of small defect clusters and the growth of voids. The voids are visible at annealing temperatures in excess of 600 deg C, consistent with an excess vacancy concentration in the irradiated alloy layer. The 600 to 750 deg C range is marked by pronounced maximal recovery of strain, and is correlated with the dissolution of faulted loops in the substrate. At temperatures in the range 750-1000 deg C, strain relaxation is observed and is correlated with the growth of intrinsic dislocations within the alloy layer. These dislocations nucleate at the alloy-substrate interface and grow within the alloy layer, towards the surface. (authors)

  20. Thermal annealing evolution to physical properties of ZnS thin films as buffer layer for solar cell applications

    Science.gov (United States)

    Kaushalya; Patel, S. L.; Purohit, A.; Chander, S.; Dhaka, M. S.

    2018-07-01

    The conventional CdS window layer in solar cells is found to be hazardous for the environment due to toxic nature of the cadmium. Therefore, in order to seek an alternative, a study on effect of post-annealing treatment on physical properties of e-beam evaporated ZnS thin films has been carried out where films of thickness 150 nm were deposited on glass and indium tin oxide (ITO) substrates. The post annealing treatment was performed in air atmosphere within the temperature range from 100 °C to 500 °C. X-ray diffraction analysis reveals that the films on glass substrate are found to be amorphous at low temperature annealing (≤300 °C) while have α-ZnS hexagonal phase (wurtzite structure) at higher annealing. The patterns also show that the possibility of oxidation is increased significantly at temperature 500 °C which leads to decrease in direct band gap from 3.28 eV to 3.18 eV except films annealed at 300 °C (i.e. 3.39 eV). The maximum transmittance is found about 95% as a result of Doppler blue shift while electrical analysis indicated almost ohmic behavior between current and voltage and surface roughness is increased with post-annealing treatment.

  1. Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

    International Nuclear Information System (INIS)

    Huang, Junjun; Zeng, Yuheng; Tan, Ruiqin; Wang, Weiyan; Yang, Ye; Dai, Ning; Song, Weijie

    2013-01-01

    In this work, silicon-rich SiO 2 (SRSO) thin films were deposited at different substrate temperatures (T s ) and then annealed by rapid thermal annealing to form SiO 2 -matrix boron-doped silicon-nanocrystals (Si-NCs). The effects of T s on the micro-structure and electrical properties of the SiO 2 -matrix boron-doped Si-NC thin films were investigated using Raman spectroscopy and Hall measurements. Results showed that the crystalline fraction and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films both increased significantly when the T s was increased from room temperature to 373 K. When the T s was further increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%, and the dark conductivity reduced from 8 × 10 −3 S/cm to 5.5 × 10 −5 S/cm. The changes in micro-structure and dark conductivity of the SiO 2 -matrix boron-doped Si-NC thin films were most possibly due to the different amount of Si-O 4 bond in the as-deposited SRSO thin films. Our work indicated that there was an optimal T s , which could significantly increase the crystallization and conductivity of Si-NC thin films. Also, it was illumined that the low-resistivity SiO 2 -matrix boron-doped Si-NC thin films can be achieved under the optimal substrate temperatures, T s .

  2. Effect of oxide charge trapping on x-ray photoelectron spectroscopy of HfO2/SiO2/Si structures

    International Nuclear Information System (INIS)

    Abe, Yasuhiro; Miyata, Noriyuki; Suzuki, Haruhiko; Kitamura, Koji; Igarashi, Satoru; Nohira, Hiroshi; Ikenaga, Eiji

    2009-01-01

    We examined the effects of interfacial SiO 2 layers and a surface metal layer on the photoelectron spectra of HfO 2 /SiO 2 /Si structures by hard X-ray photoemission spectroscopy with synchrotron radiation as well as conventional X-ray photoelectron spectroscopy (XPS). The Hf 4f and Hf 3d photoelectron peaks broadened and shifted toward a higher binding energy with increasing thickness of the interfacial SiO 2 layer, even though photoelectrons may have been emitted from the HfO 2 layer with the same chemical composition. Thinning the interfacial Si oxide layer to approximately one monolayer and depositing a metal layer on the HfO 2 surface suppressed these phenomena. The O 1s photoelectron spectra revealed marked differences between the metal- and nonmetal-deposited HfO 2 /SiO 2 /Si structures; HfO 2 and SiO 2 components in the O 1s photoelectron spectra for the metal-deposited structures were observed at reasonably separated binding energies, but those for the nonmetal-deposited structures were not separated clearly. From this behavior concerning the effects of interfacial SiO 2 and surface metal layers, we concluded that the Hf 4f, Hf 3d, and O 1s spectra measured from the HfO 2 /SiO 2 /Si structures did not reflect actual chemical bonding states. We consider that potential variations in the HfO 2 film owing to charge trapping strongly affect the measured photoelectron spectra. On the basis of angle-resolved XPS measurements, we propose that positive charges are trapped at the HfO 2 surface and negative charges are trapped inside the HfO 2 layer. (author)

  3. The ceramic SiO2 and SiO2-TiO2 coatings on biomedical Ti6Al4VELI titanium alloy

    International Nuclear Information System (INIS)

    Surowska, B.; Walczak, M.; Bienias, J.

    2004-01-01

    The paper presents the study of intermediate SiO 2 and SiO 2 -TiO 2 sol-gel coatings and dental porcelain coatings on Ti6Al4VELI titanium alloy. Surface microstructures and wear behaviour by pin-on-disc method of the ceramic coatings were investigated. The analysis revealed: (1) a compact, homogeneous SiO 2 and SiO 2 -TiO 2 coating and (2) that intermediate coatings may provide a durable joint between metal and porcelain, and (3) that dental porcelain on SiO 2 and TiO 2 coatings shows high wear resistance. (author)

  4. Formation of scandium nitride (ScN) layer on gallium arsenide (GaAs) substrate using a combined technique of e-beam evaporator and ammonia annealing treatment

    International Nuclear Information System (INIS)

    Yong Shee Meng, Alvin; Zainal, Norzaini; Hassan, Zainuriah; Ibrahim, Kamarulazizi

    2015-01-01

    Graphical abstract: - Highlights: • Forming ScN layer using electron e-beam evaporator with successive NH_3 annealing thermal has been successfully demonstrated. • NH_3 annealing played the role in changing the grain structure of the ScN layer. • The existence of Sc−N bonds was confirmed by XPS measurement. • The 900 °C annealed ScN layer showed the best structural and optical characteristics. • ScN layer annealed at 980 °C exhibited poor structural and optical characteristics. - Abstract: A demonstration on a new technique of growing ScN using electron beam (e-beam) evaporator, coupled with successive ammonia (NH_3) annealing treatment is presented in this paper. The annealing temperature was varied at 750, 800, 850, 900 and 980 °C in order to obtain the best ScN layer. It was found that as the annealing temperature increased, the surface morphology of the ScN layer changed and ScN grains formed abundantly on the surface. The best surface of ScN layer was found in the 900 °C annealed sample. However, the roughness of the ScN increased with temperature. The photoluminescence (PL) peak of the near-to-band-edge (NBE) of ScN was observable in all samples and its intensity was the highest in the 900 °C annealed sample. Note that when the annealing treatment was conducted at 980 °C, the GaN PL peak is observable. Raman peaks of TO(X) of ScN were much evident at the annealing temperature above 900 °C. The formation of Sc−N bonds was confirmed by X-ray spectroscopy (XPS) measurement. In the end of this work, we propose that the formation of ScN using the above techniques was successful, with thermal annealing at the temperature of 900 °C.

  5. Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation

    International Nuclear Information System (INIS)

    Zhao, J. P.; Huang, D. X.; Jacobson, A. J.; Chen, Z. Y.; Makarenkov, B.; Chu, W. K.; Bahrim, B.; Rabalais, J. W.

    2008-01-01

    Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO 2 , i.e., Ge-SiO 2 quantum dot composites, have been formed by ion implantation of 74 Ge + isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission electron microscopy (TEM) images and micro-Raman scattering show that amorphous Ge nanodots are formed at all temperatures. The formation of amorphous Ge nanodots is different from reported crystalline Ge nanodot formation by high energy ion implantation followed by a necessary high temperature annealing process. At room temperature, a confined spatial distribution of the amorphous Ge nanodots can be obtained. Ge inward diffusion was found to be significantly enhanced by a synergetic effect of high implantation temperature and preferential sputtering of surface oxygen, which induced a much wider and deeper Ge nanodot distribution at elevated implantation temperature. The bimodal size distribution that is often observed in high energy implantation was not observed in the present study. Cross-sectional TEM observation and the depth profile of Ge atoms in SiO 2 obtained from x-ray photoelectron spectra revealed a critical Ge concentration for observable amorphous nanodot formation. The mechanism of formation of amorphous Ge nanodots and the change in spatial distribution with implantation temperature are discussed

  6. Effect of hydrostatic pressure on photoluminescence spectra from structures with Si nanocrystals fabricated in SiO2 matrix

    International Nuclear Information System (INIS)

    Zhuravlev, K.S.; Tyschenko, I.E.; Vandyshev, E.N.; Bulytova, N.V.; Misiuk, A.; Rebohle, L.; Skorupa, W.

    2002-01-01

    The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO 2 films was studied. A 'blue'-shift of PL spectrum from the SiO 2 films implanted with Si + ions to total dose of 1.2x10 17 cm -2 with increase in hydrostatic pressure was observed. For the films implanted with Si + ions to a total dose of 4.8x10 16 cm -2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)

  7. Effect of annealing on the structural and optical properties of (3 1 1)B GaAsBi layers

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigo, J.F., E-mail: juanfrancisco.rodrigo@uca.es [Departamento de Ciencia de los Materiales e I. M. y Q. I., Facultad de Ciencias, Universidad de Cadiz, 11510 Puerto Real, Cadiz (Spain); Sales, D.L. [Departamento de Ciencia de los Materiales e I. M. y Q. I., Facultad de Ciencias, Universidad de Cadiz, 11510 Puerto Real, Cadiz (Spain); Shafi, M. [School of Physics and Astronomy, University of Nottingham, NG7 2RD Nottingham (United Kingdom); Henini, M. [School of Physics and Astronomy, University of Nottingham, NG7 2RD Nottingham (United Kingdom); Nottingham Nanotechnology and Nanoscience Centre, University of Nottingham, NG7 2RD Nottingham (United Kingdom); Turyanska, L.; Novikov, S. [School of Physics and Astronomy, University of Nottingham, NG7 2RD Nottingham (United Kingdom); Molina, S.I. [Departamento de Ciencia de los Materiales e I. M. y Q. I., Facultad de Ciencias, Universidad de Cadiz, 11510 Puerto Real, Cadiz (Spain)

    2010-07-01

    The influence of post-growth annealing on the microstructure and photoluminescence (PL) of GaAsBi alloys grown on (3 1 1)B GaAs is analyzed. Conventional transmission electron microscopy (TEM) performed on as-grown samples evidence the presence of structural defects and a mosaic structure in the GaAsBi layer. A sequence of stacking faults at regions close to the GaAs/GaAsBi interface are observed in high resolution TEM images. After annealing at 473 K during 3 h the mosaic structure disappears, the presence of defects is reduced and the PL peak intensely enhances.

  8. Effect of annealing on the structural and optical properties of (3 1 1)B GaAsBi layers

    International Nuclear Information System (INIS)

    Rodrigo, J.F.; Sales, D.L.; Shafi, M.; Henini, M.; Turyanska, L.; Novikov, S.; Molina, S.I.

    2010-01-01

    The influence of post-growth annealing on the microstructure and photoluminescence (PL) of GaAsBi alloys grown on (3 1 1)B GaAs is analyzed. Conventional transmission electron microscopy (TEM) performed on as-grown samples evidence the presence of structural defects and a mosaic structure in the GaAsBi layer. A sequence of stacking faults at regions close to the GaAs/GaAsBi interface are observed in high resolution TEM images. After annealing at 473 K during 3 h the mosaic structure disappears, the presence of defects is reduced and the PL peak intensely enhances.

  9. Regulating effect of SiO2 interlayer on optical properties of ZnO thin films

    International Nuclear Information System (INIS)

    Xu, Linhua; Zheng, Gaige; Miao, Juhong; Su, Jing; Zhang, Chengyi; Shen, Hua; Zhao, Lilong

    2013-01-01

    ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. Regulating effect of SiO 2 interlayer with various thicknesses on the optical properties of ZnO/SiO 2 thin films was investigated deeply. The analyses of X-ray diffraction show that the ZnO layers in ZnO/SiO 2 nanocomposite films have a wurtzite structure and are preferentially oriented along the c-axis while the SiO 2 layers are amorphous. The scanning electron microscope images display that the ZnO layers are composed of columnar grains and the thicknesses of ZnO and SiO 2 layers are all very uniform. The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films, which is reflected in the following two aspects: (1) the transmittance of ZnO/SiO 2 nanocomposite films is increased; (2) the photoluminescence (PL) of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays. -- Highlights: ► ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. ► The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films. ► The photoluminescence of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. ► The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays

  10. Incorporation of sol-gel SnO2:Sb into nanoporous SiO2

    International Nuclear Information System (INIS)

    Canut, B.; Blanchin, M.G.; Ramos-Canut, S.; Teodorescu, V.; Toulemonde, M.

    2006-01-01

    Silicon oxide films thermally grown on Si(1 0 0) wafers were irradiated with 200 MeV 197 Au ions in the 10 9 -10 1 cm -2 fluence range. The targets were then etched at room temperature in aqueous HF solution (1 vol.%) for various durations. Atomic force microscopy (AFM) in the tapping mode was used to probe the processed surfaces. Conical holes with a low size dispersion were evidenced. Their surface diameter varies between 20 and 70 nm, depending on the etching time. Sol-gel dip coating technique, associated with a further annealing treatment performed at 500 o C for 15 min, was used to fill the nanopores created in SiO 2 with a transparent conductive oxide (SnO 2 doped with antimony). Transmission electron microscopy (TEM) performed on cross-sectional specimen showed that SnO 2 :Sb crystallites of ∼5 nm mean size are trapped in the holes without degrading their geometry

  11. A comparative study on omnidirectional anti-reflection SiO2 nanostructure films coating by glancing angle deposition

    Science.gov (United States)

    Prachachet, R.; Samransuksamer, B.; Horprathum, M.; Eiamchai, P.; Limwichean, S.; Chananonnawathorn, C.; Lertvanithphol, T.; Muthitamongkol, P.; Boonruang, S.; Buranasiri, P.

    2018-02-01

    Fabricated omnidirectional anti-reflection nanostructure films as a one of the promising alternative solar cell applications have attracted enormous scientific and industrial research benefits to their broadband, effective over a wide range of incident angles, lithography-free and high-throughput process. Recently, the nanostructure SiO2 film was the most inclusive study on anti-reflection with omnidirectional and broadband characteristics. In this work, the three-dimensional silicon dioxide (SiO2) nanostructured thin film with different morphologies including vertical align, slant, spiral and thin films were fabricated by electron beam evaporation with glancing angle deposition (GLAD) on the glass slide and silicon wafer substrate. The morphological of the prepared samples were characterized by field-emission scanning electron microscope (FE-SEM) and high-resolution transmission electron microscope (HRTEM). The transmission, omnidirectional and birefringence property of the nanostructure SiO2 films were investigated by UV-Vis-NIR spectrophotometer and variable angle spectroscopic ellipsometer (VASE). The spectrophotometer measurement was performed at normal incident angle and a full spectral range of 200 - 2000 nm. The angle dependent transmission measurements were investigated by rotating the specimen, with incidence angle defined relative to the surface normal of the prepared samples. This study demonstrates that the obtained SiO2 nanostructure film coated on glass slide substrate exhibits a higher transmission was 93% at normal incident angle. In addition, transmission measurement in visible wavelength and wide incident angles -80 to 80 were increased in comparison with the SiO2 thin film and glass slide substrate due to the transition in the refractive index profile from air to the nanostructure layer that improve the antireflection characteristics. The results clearly showed the enhanced omnidirectional and broadband characteristic of the three dimensional Si

  12. Compositional changes in the channel layer of an amorphous In–Ga–Zn-O thin film transistor after thermal annealing

    International Nuclear Information System (INIS)

    Kang, Jiyeon; Lee, Su Jeong; Myoung, Jae-Min; Kim, Chul-Hong; Chae, Gee Sung; Jun, Myungchul; Hwang, Yong Kee; Lee, Woong

    2012-01-01

    In order to investigate the possible reason for the improved device performances of amorphous In–Ga–Zn-O (a-IGZO) thin film transistors after thermal annealing, changes in the elemental concentrations in the a-IGZO channel regions and related device performances due to thermal annealing were observed. It was found that thermal annealing introduces a substantial level of oxygen deficiencies in the channel layer accompanying significantly enhanced device performances. The improved device performances are attributed to the oxygen deficiency which is believed to be averaged over the entire structure to function as shallow donors increasing the carrier concentrations. Such a deduction was supported by the changes in the absorption spectra of the a-IGZO films with various thermal histories. (paper)

  13. Influence of annealing temperature on passivation performance of thermal atomic layer deposition Al2O3 films

    International Nuclear Information System (INIS)

    Zhang Xiang; Liu Bang-Wu; Li Chao-Bo; Xia Yang; Zhao Yan

    2013-01-01

    Chemical and field-effect passivation of atomic layer deposition (ALD) Al 2 O 3 films are investigated, mainly by corona charging measurement. The interface structure and material properties are characterized by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. Passivation performance is improved remarkably by annealing at temperatures of 450 °C and 500 °C, while the improvement is quite weak at 600 °C, which can be attributed to the poor quality of chemical passivation. An increase of fixed negative charge density in the films during annealing can be explained by the Al 2 O 3 /Si interface structural change. The Al—OH groups play an important role in chemical passivation, and the Al—OH concentration in an as-deposited film subsequently determines the passivation quality of that film when it is annealed, to a certain degree. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. MOHOS-type memory performance using HfO2 nanoparticles as charge trapping layer and low temperature annealing

    International Nuclear Information System (INIS)

    Molina, Joel; Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso

    2012-01-01

    Highlights: ► HfO 2 nanoparticles used as charge trapping layer in MOHOS memory devices. ► Increasing HfO 2 nanoparticles concentration enhances charge injection and trapping. ► Enhancement of memory performance with low temperature annealing. ► Charge injection is done without using any hot-carrier injection mechanism. ► Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO 2 nanoparticles (np-HfO 2 ) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal–oxide–high-k–oxide–silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol–gel spin coating method after using different concentrations of np-HfO 2 and low temperature annealing (down to 425 °C) in order to obtain charge–retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO 2 concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO 2 as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

  15. Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

    DEFF Research Database (Denmark)

    Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

    1986-01-01

    X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

  16. Measurement of nanosize etched pits in SiO2 optical fiber conduit using AFM

    International Nuclear Information System (INIS)

    Espinosa, G.; Golzarri, J.I.; Vazquez, C.; Fragoso, R.

    2003-01-01

    Fission fragment tracks from 252 Cf have been observed in SiO 2 optical fiber, using an atomic force microscope (AFM), after a very short chemical etching in hydrofluoric acid solution at normal temperature. The nuclear track starting and evolution process is followed by the AFM direct measurements on the material surface and beyond a fine layer of the surface material. The images of the scanned cones were determined observing the two predominant energies from 252 Cf fission fragments and the development of the tracks in the 150 μm diameter optical fiber conduit

  17. Synthesis of metallic nanoparticles in SiO2 matrices

    International Nuclear Information System (INIS)

    Gutierrez W, C.; Mondragon G, G.; Perez H, R.; Mendoza A, D.

    2004-01-01

    Metallic nanoparticles was synthesized in SiO 2 matrices by means of a process of two stages. The first one proceeded via sol-gel, incorporating the metallic precursors to the reaction system before the solidification of the matrix. Later on, the samples underwent a thermal treatment in atmosphere of H 2 , carrying out the reduction of the metals that finally formed to the nanoparticles. Then it was detected the presence of smaller nanoparticles than 20 nm, dispersed and with the property of being liberated easily of the matrix, conserving a free surface, chemically reactive and with response to external electromagnetic radiation. The system SiO 2 -Pd showed an important thermoluminescent response. (Author)

  18. Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures.

    Science.gov (United States)

    Zhao, Yan; Zhou, Chunlan; Zhang, Xiang; Zhang, Peng; Dou, Yanan; Wang, Wenjing; Cao, Xingzhong; Wang, Baoyi; Tang, Yehua; Zhou, Su

    2013-03-02

    Thermal atomic layer-deposited (ALD) aluminum oxide (Al2O3) acquires high negative fixed charge density (Qf) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Qf can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al2O3 films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Qf obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Qf. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiOx/Si interface region decreased with increased temperature. Measurement results of Qf proved that the Al vacancy of the bulk film may not be related to Qf. The defect density in the SiOx region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.

  19. Ag-Decorated Fe3O4@SiO2 Nanorods: Synthesis, Characterization, and Applications in Degradation of Organic Dyes

    Directory of Open Access Journals (Sweden)

    Chao Li

    2016-01-01

    Full Text Available Well-dispersed Ag nanoparticles (NPs are successfully decorated on Fe3O4@SiO2 nanorods (NRs via a facile step-by-step strategy. This method involves coating α-Fe2O3 NRs with uniform silica layer, reduction in 10% H2/Ar atmosphere at 450°C to obtain Fe3O4@SiO2 NRs, and then depositing Ag NPs on the surface of Fe3O4@SiO2 NRs through a sonochemical step. It was found that the as-prepared Ag-decorated magnetic Fe3O4@SiO2 NRs (Ag-MNRs exhibited a higher catalytic efficiency than bare Ag NPs in the degradation of organic dye and could be easily recovered by convenient magnetic separation, which show great application potential for environmental protection applications.

  20. Adsorption of uranyl in SiO2 porous glass

    International Nuclear Information System (INIS)

    Benedetto, F. E.; Prado, M. O.

    2013-01-01

    Vitreous SiO 2 porous matrices can be used in many applications involving the uptake of chemical species on its solid surface. In this work, vitreous silica sponges were prepared from a sodium borosilicate glass manufactured in our laboratory. The product obtained was then separated into phases with subsequent leaching of the soluble phase rich in B and Na. The resulting porous matrices have a specific surface of 35 m2/gr. Adsorption of uranyl ions onto the SiO 2 porous surface was studied to evaluate the use of this material as a filter for treatment of uranium containing water. The effects of contact time, adsorbent mass and equilibrium concentration of solution were studied. The porous adsorbent exhibits a pseudo-second-order kinetic behavior. The sponges with adsorbed uranium were thermally sealed as a way of U immobilization. Retention of uranium was confirmed during the matrix sealing by TGA. Uranium concentration before and after adsorption tests were made by means of ICP-OES. For uranium concentration of 800 ppm, 72 hours contact time and pH of 3.5, the amount of uranium adsorbed was 21.06 ± 0.02 mg U per gram of vitreous porous SiO 2 . (author)

  1. Surface properties of SiO2 with and without H2O2 treatment as gate dielectrics for pentacene thin-film transistor applications

    Science.gov (United States)

    Hung, Cheng-Chun; Lin, Yow-Jon

    2018-01-01

    The effect of H2O2 treatment on the surface properties of SiO2 is studied. H2O2 treatment leads to the formation of Si(sbnd OH)x at the SiO2 surface that serves to reduce the number of trap states, inducing the shift of the Fermi level toward the conduction band minimum. H2O2 treatment also leads to a noticeable reduction in the value of the SiO2 capacitance per unit area. The effect of SiO2 layers with H2O2 treatment on the behavior of carrier transports for the pentacene/SiO2-based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a hydrogenated layer between pentacene and SiO2 leads to a change in the pentacene-SiO2 interaction, increasing the value of the carrier mobility.

  2. Effects of Co layer thickness and annealing temperature on the magnetic properties of inverted [Pt/Co] multilayers

    International Nuclear Information System (INIS)

    Lee, Tae Young; Chan Won, Young; Su Son, Dong; Lee, Seong-Rae; Ho Lim, Sang

    2013-01-01

    The effects of Co layer thickness and annealing temperature on the perpendicular magnetic anisotropy (PMA) properties of inverted [Pt (0.2 nm)/Co (t Co )] 6 multilayers (where t Co indicates the thickness of the Co layer) have been investigated. The cross-sectional microstructure, as observed from the high-resolution transmission electron microscope images, shows a clear layered structure with atomically flat interfaces both in the as-deposited state as well as after annealing, indicating the interface effects for PMA. The effective PMA energy density (K eff ) increases significantly with an increase in t Co from 0.2 to 0.28 nm and then becomes almost saturated with further increases in t Co , followed by a slight reduction at the highest Co thickness, t Co  = 0.6 nm. In order to explain the t Co dependence on K eff , the intrinsic PMA energy density (K i ) is calculated by additionally measuring a similar set of results for the saturation magnetization. The K i value increases nearly linearly with the increase in t Co from 0.2 to 0.5 nm, followed by saturation at a higher t Co value of 0.6 nm. Owing to a close relationship between K i and the quality of the interfaces, these results indicate a similar t Co dependence on the quality of the interfaces. This is further supported from the magnetic measurements of the samples annealed at the highest temperature of 500 °C, where a second phase is formed, which show a similar t Co dependence on the amount of the second phase. The K i value is nearly independent of the annealing temperature at t Co  ≤ 0.4 nm, above which a substantial reduction is observed, when the annealing temperature exceeds 500 °C

  3. Interfacial layers evolution during annealing in Ti-Al multi-laminated composite processed using hot press and roll bonding

    Science.gov (United States)

    Assari, A. H.; Eghbali, B.

    2016-09-01

    Ti-Al multi-laminated composites have great potential in high strength and low weight structures. In the present study, tri-layer Ti-Al composite was synthesized by hot press bonding under 40 MPa at 570 °C for 1 h and subsequent hot roll bonding at about 450 °C. This process was conducted in two accumulative passes to 30% and to 67% thickness reduction in initial and final passes, respectively. Then, the final annealing treatments were done at 550, 600, 650, 700 and 750 °C for 2, 4 and 6 h. Investigations on microstructural evolution and thickening of interfacial layers were performed by scanning electron microscopes, energy dispersive spectrometer, X-ray diffraction and micro-hardness tests. The results showed that the thickening of diffusion layers corresponds to amount of deformation. In addition to thickening of the diffusion layers, the thickness of aluminum layers decreased and after annealing treatment at 750 °C for 6 h the aluminum layers were consumed entirely, which occurred because of the enhanced interdiffusion of Ti and Al elements. Scanning electron microscope equipped with energy dispersive spectrometer showed that the sequence of interfacial layers as Ti3Al-TiAl-TiAl2-TiAl3 which are believed to be the result of thermodynamic and kinetic of phase formation. Micro-hardness results presented the variation profile in accordance with the sequence of intermetallic phases and their different structures.

  4. High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Shuo; Ma, Ping, E-mail: maping@semi.ac.cn; Liu, Boting; Wu, Dongxue; Li, Jinmin [Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Huang, Yuliang [Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083 (China); Wang, Junxi [State Key Laboratory of Solid State Lighting, Beijing 100083 (China)

    2016-06-15

    High-resistive layers were obtained by periodic growth and in situ annealing of InGaN. The effect of the annealing temperature of InGaN on the indium content and the material sheet resistive was investigated. The indium content decreased as the increase of in situ annealing temperature. Additionally, the material sheet resistance increased with the increase of the in situ annealing temperature for the annealed samples and reached 2 × 10{sup 10}Ω/sq in the light and 2 × 10{sup 11}Ω/sq in the dark when the in situ annealing temperature reached 970{sup ∘}C. The acquirement of high-resistive layers is attributed to the generation of indium vacancy-related defects. Introducing indium vacancy-related defects to compensate background carriers can be an effective method to grow high-resistance material.

  5. High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Zhang, Shuo; Ma, Ping; Liu, Boting; Wu, Dongxue; Li, Jinmin; Huang, Yuliang; Wang, Junxi

    2016-01-01

    High-resistive layers were obtained by periodic growth and in situ annealing of InGaN. The effect of the annealing temperature of InGaN on the indium content and the material sheet resistive was investigated. The indium content decreased as the increase of in situ annealing temperature. Additionally, the material sheet resistance increased with the increase of the in situ annealing temperature for the annealed samples and reached 2 × 10"1"0Ω/sq in the light and 2 × 10"1"1Ω/sq in the dark when the in situ annealing temperature reached 970"∘C. The acquirement of high-resistive layers is attributed to the generation of indium vacancy-related defects. Introducing indium vacancy-related defects to compensate background carriers can be an effective method to grow high-resistance material.

  6. Au nanoparticles decorated SiO2 nanowires by dewetting on curved surfaces: facile synthesis and nanoparticles–nanowires sizes correlation

    International Nuclear Information System (INIS)

    Ruffino, F.; Grimaldi, M. G.

    2013-01-01

    We report a solid-state synthesis for SiO 2 nanowires (NWs) (up to 20 microns in length and from about 40 to about 150 nm in diameter) coated by Au nanoparticles (NPs) (from about 20 to about 80 nm in diameter). This protocol is based on three steps: (1) large area production of very long SiO 2 NWs on a Si surface exploiting a simple Au/Si solid-state reaction at high temperature; (2) coating of the SiO 2 NWs by a Au film of desired thickness using sputtering depositions; and (3) a thermal process to induce a dewetting process of the Au-film coating the SiO 2 NWs to obtain Au NPs on the curved surface of the NWs. The morphology evolution of the SiO 2 NWs was followed, in each step, by scanning electron microscopy analyses. They allowed to correlate the evolution of the NPs size with the NWs sizes for different thicknesses of the starting Au-film coating the NWs and different annealing temperatures of the dewetting process. Some theoretical concepts, related to the dewetting process of a film on a curved surface were used to describe the experimental data. The main advantages of the proposed protocols include: (i) simplicity and low-cost (it is based only on sputtering depositions and thermal processes), and (ii) versatility based on the possibility of tuning Au-film thickness and annealing temperature to tune the NPs–NWs sizes ratio. These advantages can make this technique suitable for the mass production of Au NPs-coated SiO 2 NWs toward applications in electronic devices, biosensors, and nanoscale optical devices

  7. INVESTIGATING THE fFORMATION OF INTERMETALLIC COMPOUNDS AND THE VARIATION OF BOND STRENGTH BETWEEN Al-Cu LAYERS AFTER ANNEALING IN PRESENCE OF NICKEL BETWEEN LAYERS

    Directory of Open Access Journals (Sweden)

    A. Shabani

    2016-06-01

    Full Text Available In the present study, the effect of post-rolling annealing heat treatment on the formation of intermetallic compounds between Al-Cu strips, in the presence of nickel coating on the Cu strips, was investigated. In addition, the effect of post-rolling annealing and intermetallic compounds on the bond strength of Al-Cu strips was evaluated. In order to prepare samples, Cu strips were coated with nickel by electroplating process. After surface preparing, Cu strips were placed between two Al strips and roll bonded. This method is used for producing Al-Ni-Cu composites. Then the samples were annealed at 773K for 2 h. The formation of intermetallic compounds was studied using energy dispersive spectroscopy (EDS and X-ray diffraction (XRD. Also, in order to investigate bond strength of Al-Cu after post-rolling annealing heat treatment, samples were produced using nickel powder and nickel coating. Then bond strength of strips was investigated using peeling test. The results revealed that by post-rolling annealing of layers, the bond strength between Al-Cu strips decreases dramatically.

  8. Microstructural dependence on relevant physical-mechanical properties on SiO2-Na2O-CaO-P2O5 biological glasses.

    Science.gov (United States)

    Rajendran, V; Begum, A Nishara; Azooz, M A; el Batal, F H

    2002-11-01

    Bioactive glasses of the system SiO2-Na2O-CaO-P2O5 have been prepared by the normal melting and annealing technique. The elastic moduli, attenuation, Vickers hardness, fracture toughness and fracture surface energy have been obtained using the known method at room temperature. The temperature dependence of elastic moduli and attenuation measurements have been extended over a wide range of temperature from 150 to 500 K. The SiO2 content dependence of velocities, attenuation, elastic moduli, and other parameters show an interesting observation at 45 wt% of SiO2 by exhibiting an anomalous behaviour. A linear relation is developed for Tg, which explores the influence of Na2O on SiO2-Na2O-CaO-P2O5 bioactive glasses. The measured hardness, fracture toughness and fracture surface energy show a linear relation with Young's modulus. It is also interesting to note that the observed results are functions of polymerisation and the number of non-bridging oxygens (NBO) prevailing in the network with change in SiO2 content. The temperature dependence of velocities, attenuation and elastic moduli show the existence of softening in the glass network structure as temperature increases.

  9. Cathodoluminescence properties of SiO2:Pr3+and ZnO.SiO2:Pr3+ phosphor nanopowders

    CSIR Research Space (South Africa)

    Mhlongo, GH

    2010-10-01

    Full Text Available regardless of the incorporation of Pr3+ and nanocrystalline ZnO or annealing at 600 °C. The particles were mostly spherical and agglomerated as confirmed by Field Emission Scanning Electron Microscopy. Thermogravimetric analysis of dried gels performed... Science, vol. 45(19): 5228-5236 Cathodoluminescence properties of SiO2:Pr 3+and ZnO·SiO2:Pr 3+ phosphor nanopowders G. H. Mhlongo, O. M. Ntwaeaborwa, M. S. Dhlamini, H. C. Swart, K. T. Hillie ABSTRACT: The successful incorporation of Zn...

  10. Formation and relaxation processes of photoinduced defects in a Ge-doped SiO2 glass

    International Nuclear Information System (INIS)

    Yamaguchi, M.; Saito, K.; Ikushima, A.J.

    2002-01-01

    The defect centers induced by ArF laser irradiation in Ge-doped SiO 2 have been investigated by the electron-spin resonance method. In order to observe formation and relaxation processes of the defects, step annealing has been carried out after the irradiation at 77 K. The thermally induced decay of the self-trapped hole (STH) and formation of the so-called Ge(2) centers have been observed with increasing temperature. The result suggests that the holes are transferred from the STH to the Ge(2)

  11. Magnetic nanoparticles induced dielectric enhancement in (La, Gd)2O3: SiO2 composite systems

    Science.gov (United States)

    Kao, T. H.; Mukherjee, S.; Yang, H. D.

    2013-11-01

    Magnetic Gd2O3 and non-magnetic La2O3 nanoparticles (NPs) have been synthesized together with different doping concentrations in SiO2 matrix via sol-gel route calcination at 700 °C and above. Properly annealed NP-glass composite systems show enhancement of dielectric constant and magnetodielectric effect (MDE) near room temperature, depending on superparamagnetic NPs concentrations. From application point of view, the enhancement of dielectric constant along with MDE can be achieved by tuning the NPs size through varying calcination temperature and/or increasing the doping concentration of magnetic rare earth oxide.

  12. Reducing the layer number of AB stacked multilayer graphene grown on nickel by annealing at low temperature.

    Science.gov (United States)

    Velasco, J Marquez; Giamini, S A; Kelaidis, N; Tsipas, P; Tsoutsou, D; Kordas, G; Raptis, Y S; Boukos, N; Dimoulas, A

    2015-10-09

    Controlling the number of layers of graphene grown by chemical vapor deposition is crucial for large scale graphene application. We propose here an etching process of graphene which can be applied immediately after growth to control the number of layers. We use nickel (Ni) foil at high temperature (T = 900 °C) to produce multilayer-AB-stacked-graphene (MLG). The etching process is based on annealing the samples in a hydrogen/argon atmosphere at a relatively low temperature (T = 450 °C) inside the growth chamber. The extent of etching is mainly controlled by the annealing process duration. Using Raman spectroscopy we demonstrate that the number of layers was reduced, changing from MLG to few-layer-AB-stacked-graphene and in some cases to randomly oriented few layer graphene near the substrate. Furthermore, our method offers the significant advantage that it does not introduce defects in the samples, maintaining their original high quality. This fact and the low temperature our method uses make it a good candidate for controlling the layer number of already grown graphene in processes with a low thermal budget.

  13. Effects of anodizing conditions and annealing temperature on the morphology and crystalline structure of anodic oxide layers grown on iron

    Science.gov (United States)

    Pawlik, Anna; Hnida, Katarzyna; Socha, Robert P.; Wiercigroch, Ewelina; Małek, Kamilla; Sulka, Grzegorz D.

    2017-12-01

    Anodic iron oxide layers were formed by anodization of the iron foil in an ethylene glycol-based electrolyte containing 0.2 M NH4F and 0.5 M H2O at 40 V for 1 h. The anodizing conditions such as electrolyte composition and applied potential were optimized. In order to examine the influence of electrolyte stirring and applied magnetic field, the anodic samples were prepared under the dynamic and static conditions in the presence or absence of magnetic field. It was shown that ordered iron oxide nanopore arrays could be obtained at lower anodizing temperatures (10 and 20 °C) at the static conditions without the magnetic field or at the dynamic conditions with the applied magnetic field. Since the as-prepared anodic layers are amorphous in nature, the samples were annealed in air at different temperatures (200-500 °C) for a fixed duration of time (1 h). The morphology and crystal phases developed after anodization and subsequent annealing were characterized using field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The results proved that the annealing process transforms the amorphous layer into magnetite and hematite phases. In addition, the heat treatment results in a substantial decrease in the fluorine content and increase in the oxygen content.

  14. Effect of annealing temperature on the structure and coke-resistance of nickel–iron bimetallic catalytic layer for in situ methane steam reforming in SOFC operation

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xuehua; Zhang, Hanqing; Zhao, DanDan; Tang, Dian; Zhang, Teng, E-mail: teng_zhang@fzu.edu.cn

    2014-11-15

    Highlights: • An intermediate FeNi{sub 3} phase forms in all N{sub i0.75}Fe{sub 0.25} catalysts in present work. • The catalyst annealed at 705 °C has smallest calculated surface energy. • The catalyst annealed at 705 °C also exhibits the best coke resistance in methane. • The cell with catalyst layer annealed at 705 °C has the best stability in methane. - Abstract: In this paper, the effect on coke formation of adding a Ni{sub 0.75}Fe{sub 0.25} catalyst layer to the anode side of a fuel cell running on methane is investigated. The formation of an intermediate FeNi{sub 3} phase can be observed in catalysts annealed at different temperatures. The catalyst annealed at 705 °C has the smallest calculated surface energy and grain size among all catalysts annealed at different temperatures. In addition, the O{sub 2}-TPO profiles and Raman spectra of spent anode material reveal that the catalyst annealed at 705 °C has the best coke resistance among all catalysts. Moreover, the cell with catalyst layer annealed at 705 °C, under a current density of 600 mA cm{sup −2} at 650 °C, experiences a decrease of 10% after operating in methane for 260 min, which is much more stable than that without catalyst layer (a decrease of 50%)

  15. Preparation of CuGaSe2 absorber layers for thin film solar cells by annealing of efficiently electrodeposited Cu-Ga precursor layers from ionic liquids

    International Nuclear Information System (INIS)

    Steichen, M.; Larsen, J.; Guetay, L.; Siebentritt, S.; Dale, P.J.

    2011-01-01

    CuGaSe 2 absorber layers were prepared on molybdenum substrates by electrochemical codeposition of copper and gallium and subsequential annealing in selenium vapour. The electrodeposition was made from a deep eutectic based ionic liquid consisting of choline chloride/urea (Reline) with a plating efficiency of over 85%. The precursor film composition is controlled by the ratio of the copper to gallium fluxes under hydrodynamic conditions and by the applied deposition potential. X-ray diffraction reveals CuGa 2 alloying during the electrodeposition and CuGaSe 2 formation after annealing. Photoluminescence (PL) and photocurrent spectroscopy revealed the good opto-electronic properties of the CuGaSe 2 absorber films. The absorber layers have been converted to full devices with the best device achieving 4.0 % solar conversion efficiency.

  16. Alkali passivation mechanism of sol-gel derived TiO2-SiO2 films coated on soda-lime-silica glass substrates

    Energy Technology Data Exchange (ETDEWEB)

    Matsuda, A; Matsuno, Y; Katayama, S; Tsuno, T [Nippon Steel Glass Co. Ltd., Tokyo (Japan); Toge, N; Minami, T [University of Osaka Prefecture, Osaka (Japan). College of Engineering

    1992-09-01

    TiO2-SiO2 films prepared by the sol-gel method serves as an effective alkali passivation layer on a soda-lime-silica glass substrate and the film is superior to a sol-gel derived pure SiO2 film from the view point of weathering resistance improvement. To clarify the reason, alkali passivation mechanism of sol-gel derived TiO2-SiO2 glass films with different TiO2 contents coated on a soda-lime-silica glass substrate was studied by SIMS (secondary ion mass spectroscopy) and XPS (X-ray photoelectron spectroscopy) analyses, and compared with the results of a sol-gel derived pure SiO2 film. As a result, the following conclusions were obtained: An increase in TiO2 content in the TiO2 SiO2 film increases the sodium concentration in the film, which was induced by sodium migration from the glass substrate during the heat-treatment. Because of the presence of sodium the TiO2 -SiO2 films serve not as a barrier but as an effective getter of alkali ions and thereby effectively improve the weathering resistance Of the glass substrate. 10 refs., 6 figs.

  17. SiO2 Nanopillars on Microscale Roughened Surface of GaN-Based Light-Emitting Diodes by SILAR-Based Method

    Directory of Open Access Journals (Sweden)

    X. F. Zeng

    2013-01-01

    Full Text Available We reported the SiO2 nanopillars on microscale roughened surface on GaN-based LED to enhance light-extraction efficiency. ZnO nanoparticles were deposited on SiO2 as an etching mask before ICP etching SiO2 by successive ionic layer adsorption and reaction method (SILAR, and the different heights of SiO2 nanopillars on microroughened ITO/GaN were obtained after etching. Compared to a regular (flat surface GaN-based LED, the light output power for a LED with microroughening was increased by 33%. Furthermore, the proposed LEDs with SiO2 nanopillars on microroughened surface show the enhancement in light output power by 42.7%–49.1% at 20 mA. The increase in light output power is mostly attributed to reduction in Fresnel reflection by rough surface. The height of SiO2 nanopillars was increasing cause resulting in more rough on the microscale surface of GaN-based LEDs.

  18. Synthesis and characterization of ion-implanted Pt nanocrystals in SiO2

    International Nuclear Information System (INIS)

    Giulian, R.; Kluth, P.; Johannessen, B.; Araujo, L.L.; Llewellyn, D.J.; Cookson, D.J.; Ridgway, M.C.

    2007-01-01

    Pt nanocrystals (NCs) produced by ion implantation in SiO 2 films were investigated by Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and small angle X-ray scattering (SAXS). The implantations were performed at liquid nitrogen temperature using energies between 3.4 and 5.6 MeV and an ion fluence range of 2-30 x 10 16 cm -2 and were followed by annealing in forming gas (95% N 2 , 5% H 2 ) for one hour at temperatures between 500 and 1100 deg. C. TEM analysis revealed that the NCs are spherical in shape. The mean size of the NCs annealed at 1100 deg. C varied between 2.8 and 3.6 nm for the highest and lowest fluences, respectively, as determined with both TEM and SAXS. In contrast to previous studies on ion implanted metal NCs, larger Pt NCs are located far beyond the Pt peak concentration, potentially the result of a strongly defect mediated NC nucleation

  19. Moessbauer studies of magnetic Fe2O3/SiO2 nanocomposite

    International Nuclear Information System (INIS)

    Lancok, A.; Zaveta, K.; Savii, C.; Barcova, K.

    2006-01-01

    Fe 2 O 3 /SiO 2 magnetic nanocomposites rich in Fe 2 O 3 have been obtained by annealing at 1000 grad C the xerogel samples, prepared under various conditions. The target concentrations of iron oxide in inert matrix were 20% and 30%. As mesoporous matrices both silica and polyvinyl alcohol - silica hybrid ones were used. The xerogel nanocomposite samples were obtained in situ and by impregnation under ultrasonic activation. All obtained samples were annealed under moderate oxidation conditions (air) and inert atmosphere such as vacuum or nitrogen. Moessbauer spectra were obtained using a conventional Moessbauer spectrometer with a 57 Co/Rh source and constant acceleration. Velocity calibration was done using α-iron, and the Moessbauer parameters are given relative to this standard at room temperature. The Moessbauer spectra contained the sextets of ε-Fe 2 O 3 , hematite, and superparamagnetic component. The content of various phases in the samples depends on the conditions of preparation. In one of the samples also magnetite was present. The ranges of the ε-Fe 2 O 3 area of the samples are 39-76%. The hematite phase is only residual, after transformation due to heat treatment. (authors)

  20. Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures

    Science.gov (United States)

    Wang, S.; Mirkhani, V.; Yapabandara, K.; Cheng, R.; Hernandez, G.; Khanal, M. P.; Sultan, M. S.; Uprety, S.; Shen, L.; Zou, S.; Xu, P.; Ellis, C. D.; Sellers, J. A.; Hamilton, M. C.; Niu, G.; Sk, M. H.; Park, M.

    2018-04-01

    We report on the fabrication and electrical characterization of bottom gate thin-film transistors (TFTs) based on a sol-gel derived ZnO channel layer. The effect of annealing of ZnO active channel layers on the electrical characteristics of the ZnO TFTs was systematically investigated. Photoluminescence (PL) spectra indicate that the crystal quality of the ZnO improves with increasing annealing temperature. Both the device turn-on voltage (Von) and threshold voltage (VT) shift to a positive voltage with increasing annealing temperature. As the annealing temperature is increased, both the subthreshold slope and the interfacial defect density (Dit) decrease. The field effect mobility (μFET) increases with annealing temperature, peaking at 800 °C and decreases upon further temperature increase. An improvement in transfer and output characteristics was observed with increasing annealing temperature. However, when the annealing temperature reaches 900 °C, the TFTs demonstrate a large degradation in both transfer and output characteristics, which is possibly produced by non-continuous coverage of the film. By using the temperature-dependent field effect measurements, the localized sub-gap density of states (DOSs) for ZnO TFTs with different annealing temperatures were determined. The DOSs for the subthreshold regime decrease with increasing annealing temperature from 600 °C to 800 °C and no substantial change was observed with further temperature increase to 900 °C.

  1. Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

    International Nuclear Information System (INIS)

    Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

    2010-01-01

    The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

  2. Highly selective SiO2 etching over Si3N4 using a cyclic process with BCl3 and fluorocarbon gas chemistries

    Science.gov (United States)

    Matsui, Miyako; Kuwahara, Kenichi

    2018-06-01

    A cyclic process for highly selective SiO2 etching with atomic-scale precision over Si3N4 was developed by using BCl3 and fluorocarbon gas chemistries. This process consists of two alternately performed steps: a deposition step using BCl3 mixed-gas plasma and an etching step using CF4/Ar mixed-gas plasma. The mechanism of the cyclic process was investigated by analyzing the surface chemistry at each step. BCl x layers formed on both SiO2 and Si3N4 surfaces in the deposition step. Early in the etching step, the deposited BCl x layers reacted with CF x radicals by forming CCl x and BF x . Then, fluorocarbon films were deposited on both surfaces in the etching step. We found that the BCl x layers formed in the deposition step enhanced the formation of the fluorocarbon films in the CF4 plasma etching step. In addition, because F radicals that radiated from the CF4 plasma reacted with B atoms while passing through the BCl x layers, the BCl x layers protected the Si3N4 surface from F-radical etching. The deposited layers, which contained the BCl x , CCl x , and CF x components, became thinner on SiO2 than on Si3N4, which promoted the ion-assisted etching of SiO2. This is because the BCl x component had a high reactivity with SiO2, and the CF x component was consumed by the etching reaction with SiO2.

  3. Plasma-assisted ALD for the conformal deposition of SiO2 : process, material and electronic properties

    NARCIS (Netherlands)

    Dingemans, G.; Helvoirt, van C.A.A.; Pierreux, D.; Keuning, W.; Kessels, W.M.M.

    2012-01-01

    Plasma-assisted atomic layer deposition (ALD) was used to deposit SiO2 films in the temperature range of Tdep = 50–400°C on Si(100). H2Si[N(C2H5)2]2 and an O2 plasma were used as Si precursor and oxidant, respectively. The ALD growth process and material properties were characterized in detail.

  4. Formation of SiO2/polytetrafluoroethylene hybrid superhydrophobic coating

    International Nuclear Information System (INIS)

    Zheng Yansheng; He Yi; Qing Yongquan; Zhuo Zhihao; Mo Qian

    2012-01-01

    Highlights: ► The coating showed the water contact angle of 165° and the water sliding angle of 6°. ► The hierarchical structure with the low surface energy leads to surface superhydrophobicity. ► We demonstrated a simple yet efficient approach to preparing superhydrophobic surface. - Abstract: Superhydrophobic coating has been fabricated on the glass substrates with modified SiO 2 sol and polytetrafluoroethylene emulsion through a sol–gel process. SiO 2 sol was modified with γ-glycidoxypropyl trimethoxysilane. The coatings were characterized by water contact angle measurement, Scanning electron microscope, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy and thermal synthetic analysis. The experimental results show that coatings exhibited superhydrophobic and heat-resistant property with a water average contact angle of 156° and sliding angle of 6°, coating has a rough surface with both micro- and nanoscale structures, γ-glycidoxypropyl trimethoxysilane enhanced the hydrophobicity of the coatings. Low surface energy of polymer and special structure of the coatings were responsible for the hydrophobic of the surfaces.

  5. Interactions of atomic hydrogen with amorphous SiO2

    Science.gov (United States)

    Yue, Yunliang; Wang, Jianwei; Zhang, Yuqi; Song, Yu; Zuo, Xu

    2018-03-01

    Dozens of models are investigated by the first-principles calculations to simulate the interactions of an atomic hydrogen with a defect-free random network of amorphous SiO2 (a-SiO2) and oxygen vacancies. A wide variety of stable configurations are discovered due to the disorder of a-SiO2, and their structures, charges, magnetic moments, spin densities, and density of states are calculated. The atomic hydrogen interacts with the defect-free a-SiO2 in positively or negatively charged state, and produces the structures absent in crystalline SiO2. It passivates the neutral oxygen vacancies and generates two neutral hydrogenated E‧ centers with different Si dangling bond projections. Electron spin resonance parameters, including Fermi contacts, and g-tensors, are calculated for these centers. The atomic hydrogen interacts with the positive oxygen vacancies in dimer configuration, and generate four different positive hydrogenated defects, two of which are puckered like the Eγ‧ centers. This research helps to understand the interactions between an atomic hydrogen, and defect-free a-SiO2 and oxygen vacancies, which may generate the hydrogen-complexed defects that play a key role in the degeneration of silicon/silica-based microelectronic devices.

  6. Stability of trapped electrons in SiO2

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.; Flament, O.; Leray, J.L.

    1998-01-01

    Electron trapping near the Si/SiO 2 interface plays a crucial role in mitigating the response of MOS devices to ionizing radiation or high-field stress. These electrons offset positive charge due to trapped holes, and can be present at densities exceeding 10 12 cm -2 in the presence of a similar density of trapped positive charge. The nature of the defects that serve as hosts for trapped electrons in the near-interfacial SiO 2 is presently unknown, although there is compelling evidence that these defects are often intimately associated with trapped holes. This association is depicted most directly in the model of Lelis et al., which suggests that trapped electrons and holes occupy opposite sides of a compensated E center in SiO 2 . Charge exchange between electron traps and the Si can occur over a wide range of time scales, depending on the trap depth and location relative to the Si/SiO 2 interface. Here the authors report a detailed study of the stability of electron traps associated with trapped holes near the Si/SiO 2 interface

  7. MOHOS-type memory performance using HfO{sub 2} nanoparticles as charge trapping layer and low temperature annealing

    Energy Technology Data Exchange (ETDEWEB)

    Molina, Joel, E-mail: jmolina@inaoep.mx [National Institute of Astrophysics, Optics and Electronics. Electronics Department, Luis Enrique Erro 1, Tonantzintla, Puebla 72000 (Mexico); Ortega, Rafael; Calleja, Wilfrido; Rosales, Pedro; Zuniga, Carlos; Torres, Alfonso [National Institute of Astrophysics, Optics and Electronics. Electronics Department, Luis Enrique Erro 1, Tonantzintla, Puebla 72000 (Mexico)

    2012-09-20

    Highlights: Black-Right-Pointing-Pointer HfO{sub 2} nanoparticles used as charge trapping layer in MOHOS memory devices. Black-Right-Pointing-Pointer Increasing HfO{sub 2} nanoparticles concentration enhances charge injection and trapping. Black-Right-Pointing-Pointer Enhancement of memory performance with low temperature annealing. Black-Right-Pointing-Pointer Charge injection is done without using any hot-carrier injection mechanism. Black-Right-Pointing-Pointer Using injected charge density is better for comparison of scaled memory devices. - Abstract: In this work, HfO{sub 2} nanoparticles (np-HfO{sub 2}) are embedded within a spin-on glass (SOG)-based oxide matrix and used as a charge trapping layer in metal-oxide-high-k-oxide-silicon (MOHOS)-type memory applications. This charge trapping layer is obtained by a simple sol-gel spin coating method after using different concentrations of np-HfO{sub 2} and low temperature annealing (down to 425 Degree-Sign C) in order to obtain charge-retention characteristics with a lower thermal budget. The memory's charge trapping characteristics are quantized by measuring both the flat-band voltage shift of MOHOS capacitors (writing/erasing operations) and their programming retention times after charge injection while correlating all these data to np-HfO{sub 2} concentration and annealing temperature. Since a large memory window has been obtained for our MOHOS memory, the relatively easy injection/annihilation (writing/erasing) of charge injected through the substrate opens the possibility to use this material as an effective charge trapping layer. It is shown that by using lower annealing temperatures for the charge trapping layer, higher densities of injected charge are obtained along with enhanced retention times. In conclusion, by using np-HfO{sub 2} as charge trapping layer in memory devices, moderate programming and retention characteristics have been obtained by this simple and yet low-cost spin-coating method.

  8. Complex Boron Redistribution in P+ Doped-polysilicon / Nitrogen Doped Silicon Bi-layers during Activation Annealing

    Science.gov (United States)

    Abadli, S.; Mansour, F.; Perrera, E. Bedel

    We have investigated and modeled the complex phenomenon of boron (B) redistribution process in strongly doped silicon bilayers structure. A one-dimensional two stream transfer model well adapted to the particular structure of bi- layers and to the effects of strong-concentrations has been developed. This model takes into account the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method, using in-situ nitrogen- doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P+) layer. To avoid long redistributions, thermal annealing was carried out at relatively lowtemperatures (600 °C and 700 °C) for various times ranging between 30 minutes and 2 hours. The good adjustment of the simulated profiles with the experimental secondary ion mass spectroscopy (SIMS) profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders kinetics.

  9. Effect of Commercial SiO2 and SiO2 from rice husk ash loading on biodegradation of Poly (lactic acid) and crosslinked Poly (lactic acid)

    Science.gov (United States)

    Prapruddivongs, C.; Apichartsitporn, M.; Wongpreedee, T.

    2017-09-01

    In this work, biodegradation behavior of poly (lactic acid) (PLA) and crosslinked PLA filled with two types of SiO2, precipitated SiO2 (commercial SiO2) and SiO2 from rice husk ash, were studied. Rice husks were first treated with 2 molar hydrochloric acid (HCl) to produce high purity SiO2, before burnt in a furnace at 800°C for 6 hours. All components were melted bending by an internal mixer then hot pressed using compression molder to form tested specimens. FTIR spectra of SiO2 and PLA samples were investigated. The results showed the lack of silanol group (Si-OH) of rice husk ash after steric acid surface modification, while the addition of particles can affect the crosslinking of the PLA. For biodegradation test by evaluating total amount of carbon dioxide (CO2) evolved during 60 days incubation at a controlled temperature of 58±2°C, the results showed that the biodegradation of crosslinked PLA occurred slower than the neat PLA. However, SiO2 incorporation enhanced the degree of biodegradation In particular, introducing commercial SiO2 in PLA and crosslinked PLA tended to clearly increase the degree of biodegradation as a consequence of the more accelerated hydrolysis degradation.

  10. Formation and characterization of nanoparticles formed by sequential ion implantation of Au and Co into SiO2

    International Nuclear Information System (INIS)

    Kluth, P.; Hoy, B.; Johannessen, B.; Dunn, S.G.; Foran, G.J.; Ridgway, M.C.

    2007-01-01

    Nanoparticles (NPs) were formed by sequential ion implantation of Au and Co into thin SiO 2 . After Au implantation and annealing, Co implantations were carried out at room temperature (RT) and 400 deg. C, respectively, with no subsequent annealing. The NPs were investigated by means of Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and extended X-ray absorption fine structure spectroscopy (EXAFS). TEM shows the formation of Co-Au core-shell NPs for the Co implantation at 400 deg. C. EXAFS measurements indicate significant strain in the NPs and a bond-length expansion of the Co-Co bonds in the NP core with a concomitant contraction of the Au-Au bonds in the Au shells. NPs are also observed by TEM for the Co implantation performed at RT, however, a lack of crystallinity is apparent from electron diffraction and EXAFS measurements

  11. The effect of thermal annealing on pentacene thin film transistor with micro contact printing.

    Science.gov (United States)

    Shin, Hong-Sik; Yun, Ho-Jin; Baek, Kyu-Ha; Ham, Yong-Hyun; Park, Kun-Sik; Kim, Dong-Pyo; Lee, Ga-Won; Lee, Hi-Deok; Lee, Kijun; Do, Lee-Mi

    2012-07-01

    We used micro contact printing (micro-CP) to fabricate inverted coplanar pentacene thin film transistors (TFTs) with 1-microm channels. The patterning of micro-scale source/drain electrodes without etch process was successfully achieved using Polydimethylsiloxane (PDMS) elastomer stamp. We used the Ag nano particle ink as an electrode material, and the sheet resistance and surface roughness of the Ag electrodes were effectively reduced with the 2-step thermal annealing on a hotplate, which improved the mobility, the on-off ratio, and the subthreshold slope (SS) of the pentacene TFTs. In addition, the device annealing on a hotplate in a N2 atmosphere for 30 sec can enhance the off-current and the mobility properties of OTFTs without damaging the pentacene thin films and increase the adhesion between pentacene and dielectric layer (SiO2), which was investigated with the pentacene films phase change of the XRD spectrum after device annealing.

  12. Low temperature bonding of heterogeneous materials using Al2O3 as an intermediate layer

    DEFF Research Database (Denmark)

    Sahoo, Hitesh Kumar; Ottaviano, Luisa; Zheng, Yi

    2018-01-01

    Integration of heterogeneous materials is crucial for many nanophotonic devices. The integration is often achieved by bonding using polymer adhesives or metals. A much better and cleaner option is direct wafer bonding, but the high annealing temperatures required make it a much less attractive...... atomic layer deposited Al2O3 an excellent choice for the intermediate layer. The authors have optimized the bonding process to achieve a high interface energy of 1.7 J/m2 for a low temperature annealing of 300 °C. The authors also demonstrate wafer bonding of InP to SiO2 on Si and GaAs to sapphire using...

  13. Do SiO 2 and carbon-doped SiO 2 nanoparticles melt? Insights from QM/MD simulations and ramifications regarding carbon nanotube growth

    Science.gov (United States)

    Page, Alister J.; Chandrakumar, K. R. S.; Irle, Stephan; Morokuma, Keiji

    2011-05-01

    Quantum chemical molecular dynamics (QM/MD) simulations of pristine and carbon-doped SiO 2 nanoparticles have been performed between 1000 and 3000 K. At temperatures above 1600 K, pristine nanoparticle SiO 2 decomposes rapidly, primarily forming SiO. Similarly, carbon-doped nanoparticle SiO 2 decomposes at temperatures above 2000 K, primarily forming SiO and CO. Analysis of the physical states of these pristine and carbon-doped SiO 2 nanoparticles indicate that they remain in the solid phase throughout decomposition. This process is therefore one of sublimation, as the liquid phase is never entered. Ramifications of these observations with respect to presently debated mechanisms of carbon nanotube growth on SiO 2 nanoparticles will be discussed.

  14. Formation of scandium nitride (ScN) layer on gallium arsenide (GaAs) substrate using a combined technique of e-beam evaporator and ammonia annealing treatment

    Energy Technology Data Exchange (ETDEWEB)

    Yong Shee Meng, Alvin [Institute of Nano Optoelectronics Research and Technology (INOR), sains@usm, Persiaran Bukit Jambul, 11900 Bayan Lepas, Penang (Malaysia); Zainal, Norzaini, E-mail: norzaini@usm.my [Nano Optoelectronics Research and Laboratory, Universiti Sains Malaysia, sains@usm, Persiaran Bukit Jambul, 11900, Bayan Lepas, Penang (Malaysia); Hassan, Zainuriah; Ibrahim, Kamarulazizi [Institute of Nano Optoelectronics Research and Technology (INOR), sains@usm, Persiaran Bukit Jambul, 11900 Bayan Lepas, Penang (Malaysia)

    2015-12-30

    Graphical abstract: - Highlights: • Forming ScN layer using electron e-beam evaporator with successive NH{sub 3} annealing thermal has been successfully demonstrated. • NH{sub 3} annealing played the role in changing the grain structure of the ScN layer. • The existence of Sc−N bonds was confirmed by XPS measurement. • The 900 °C annealed ScN layer showed the best structural and optical characteristics. • ScN layer annealed at 980 °C exhibited poor structural and optical characteristics. - Abstract: A demonstration on a new technique of growing ScN using electron beam (e-beam) evaporator, coupled with successive ammonia (NH{sub 3}) annealing treatment is presented in this paper. The annealing temperature was varied at 750, 800, 850, 900 and 980 °C in order to obtain the best ScN layer. It was found that as the annealing temperature increased, the surface morphology of the ScN layer changed and ScN grains formed abundantly on the surface. The best surface of ScN layer was found in the 900 °C annealed sample. However, the roughness of the ScN increased with temperature. The photoluminescence (PL) peak of the near-to-band-edge (NBE) of ScN was observable in all samples and its intensity was the highest in the 900 °C annealed sample. Note that when the annealing treatment was conducted at 980 °C, the GaN PL peak is observable. Raman peaks of TO(X) of ScN were much evident at the annealing temperature above 900 °C. The formation of Sc−N bonds was confirmed by X-ray spectroscopy (XPS) measurement. In the end of this work, we propose that the formation of ScN using the above techniques was successful, with thermal annealing at the temperature of 900 °C.

  15. Thermally Annealed Iron (Oxide) Thin Film on an Alumina Barrier Layer, by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-06

    Herein we show characterization of an Fe thin film on Al_2O_3 after thermal annealing under H_2 using Al Ka X-rays. The XPS survey spectrum, narrow Fe 2p scan, and valence band regions are presented. The survey spectrum shows aluminum signals due to exposure of the underlying Al_2O_3 film during Fe nanoparticle formation.

  16. Physicochemical characterization of Fe3O4/SiO2/Au multilayer nanostructure

    International Nuclear Information System (INIS)

    Khosroshahi, Mohammad E.; Ghazanfari, Lida

    2012-01-01

    Highlights: ► The purpose of the research was to synthesize and characterize Fe 3 O 4 /SiO 2 /Au NPs. ► Uncoated MNPs showed an Ms range of 80–100 emu g −1 for particles between 35–96 nm. ► The magnetic NPs were modified with a thin layer of silica using Stober method. ► Small gold colloids (1–3 nm) were covered the amino functionalized particle surface. ► An absorption peak of 550 nm was obtained for a gold thickness of about 35 nm. - Abstract: The purpose of this research was to synthesize and characterize gold-coated Fe 3 O 4 /SiO 2 nanoshells for biomedical applications. Magnetite nanoparticles (NPs) were prepared using co-precipitation method. Smaller particles were synthesized by decreasing the NaOH concentration, which in our case this corresponded to 35 nm using 0.9 M of NaOH at 750 rpm with a specific surface area of 41 m 2 g −1 . For uncoated Fe 3 O 4 NPs, the results showed an octahedral geometry with saturation magnetization range of 80–100 emu g −1 and coercivity of 80–120 Oe for particles between 35 and 96 nm, respectively. The magnetic NPs were modified with a thin layer of silica using Stober method. Small gold colloids (1–3 nm) were synthesized using Duff method and covered the amino functionalized particle surface. Magnetic and optical properties of gold nanoshells were assessed using Brunauer–Emmett–Teller (BET), vibrating sample magnetometer (VSM), UV–Vis spectrophotometer, atomic and magnetic force microscope (AFM, MFM), and transmission electron microscope (TEM). Based on the X-ray diffraction (XRD) results, three main peaks of Au (1 1 1), (2 0 0) and (2 2 0) were identified. The formation of each layer of a nanoshell is also demonstrated by Fourier transform infrared (FTIR) results. The Fe 3 O 4 /SiO 2 /Au nanostructures, with 85 nm as particle size, exhibited an absorption peak at ∼550 nm with a magnetization value of 1.3 emu g −1 with a specific surface area of 71 m 2 g −1 .

  17. Heterojunctions formed by annealing of GaSe and InSe layered crystals in zinc vapor

    Directory of Open Access Journals (Sweden)

    Kudrynskyi Z. R.

    2012-12-01

    Full Text Available The article presents a method of creating heterojunc¬tions based on semiconductors with different lattice types. Substrates manufactured from GaSe and InSe layered crystals were annealed in Zn vapor. This way, n-ZnSe–p-GaSe and n-ZnSe–p-InSe heterojunctions were obtained. The obtained heterojunctions are photo¬sensitive in near and infrared spectral regions. This method opens up greate possibilities of producing heterostructures with a desired sensitivity band.

  18. Silicon (100)/SiO2 by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-25

    Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

  19. Nucleation of C60 on ultrathin SiO2

    Science.gov (United States)

    Conrad, Brad; Groce, Michelle; Cullen, William; Pimpinelli, Alberto; Williams, Ellen; Einstein, Ted

    2012-02-01

    We utilize scanning tunneling microscopy to characterize the nucleation, growth, and morphology of C60 on ultrathin SiO2 grown at room temperature. C60 thin films are deposited in situ by physical vapor deposition with thicknesses varying from <0.05 to ˜1 ML. Island size and capture zone distributions are examined for a varied flux rate and substrate deposition temperature. The C60 critical nucleus size is observed to change between monomers and dimers non-monotonically from 300 K to 500 K. Results will be discussed in terms of recent capture zone studies and analysis methods. Relation to device fabrication will be discussed. doi:10.1016/j.susc.2011.08.020

  20. All-dry transferred single- and few-layer MoS2 field effect transistor with enhanced performance by thermal annealing

    Science.gov (United States)

    Islam, Arnob; Lee, Jaesung; Feng, Philip X.-L.

    2018-01-01

    We report on the experimental demonstration of all-dry stamp transferred single- and few-layer (1L to 3L) molybdenum disulfide (MoS2) field effect transistors (FETs), with a significant enhancement of device performance by employing thermal annealing in moderate vacuum. Three orders of magnitude reduction in both contact and channel resistances have been attained via thermal annealing. We obtain a low contact resistance of 22 kΩ μm after thermal annealing of 1L MoS2 FETs stamp-transferred onto gold (Au) contact electrodes. Furthermore, nearly two orders of magnitude enhancement of field effect mobility are also observed after thermal annealing. Finally, we employ Raman and photoluminescence measurements to reveal the phenomena of alloying or hybridization between 1L MoS2 and its contacting electrodes during annealing, which is responsible for attaining the low contact resistance.

  1. Surface spins disorder in uncoated and SiO2 coated maghemite nanoparticles

    International Nuclear Information System (INIS)

    Zeb, F.; Nadeem, K.; Shah, S. Kamran Ali; Kamran, M.; Gul, I. Hussain; Ali, L.

    2017-01-01

    We studied the surface spins disorder in uncoated and silica (SiO 2 ) coated maghemite (γ-Fe 2 O 3 ) nanoparticles using temperature and time dependent magnetization. The average crystallite size for SiO 2 coated and uncoated nanoparticles was about 12 and 29 nm, respectively. Scanning electron microscopy (SEM) showed that the nanoparticles are spherical in shape and well separated. Temperature scans of zero field cooled (ZFC)/field cooled (FC) magnetization measurements showed lower average blocking temperature (T B ) for SiO 2 coated maghemite nanoparticles as compared to uncoated nanoparticles. The saturation magnetization (M s ) of SiO 2 coated maghemite nanoparticles was also lower than the uncoated nanoparticles and is attributed to smaller average crystallite size of SiO 2 coated nanoparticles. For saturation magnetization vs. temperature data, Bloch's law (M(T)= M(0).(1− BT b )) was fitted well for both uncoated and SiO 2 coated nanoparticles and yields: B =3×10 −7 K -b , b=2.22 and B=0.0127 K -b , b=0.57 for uncoated and SiO 2 coated nanoparticles, respectively. Higher value of B for SiO 2 coated nanoparticles depicts decrease in exchange coupling due to enhanced surface spins disorder (broken surface bonds) as compared to uncoated nanoparticles. The Bloch's exponent b was decreased for SiO 2 coated nanoparticles which is due to their smaller average crystallite size or finite size effects. Furthermore, a sharp increase of coercivity at low temperatures (<25 K) was observed for SiO 2 coated nanoparticles which is also due to contribution of increased surface anisotropy or frozen surface spins in these smaller nanoparticles. The FC magnetic relaxation data was fitted to stretched exponential law which revealed slower magnetic relaxation for SiO 2 coated nanoparticles. All these measurements revealed smaller average crystallite size and enhanced surface spins disorder in SiO 2 coated nanoparticles than in uncoated γ-Fe 2 O 3 nanoparticles. - Highlights: • Surface effects in SiO 2 coated and uncoated γ-Fe 2 O 3 nanoparticles were studied. • Average crystallite size was decreased for SiO 2 coated nanoparticles. • Average blocking temperature of SiO 2 coated nanoparticles is decreased. • SiO 2 coated nanoparticles showed enhanced surface spins disordered • SiO 2 coated nanoparticles showed slow magnetic relaxation.

  2. Synthesis and luminescent properties of CaCO3:Eu3+@SiO2 phosphors with core-shell structure

    Science.gov (United States)

    Liu, Min; Kang, Ming; Chen, Kexu; Mou, Yongren; Sun, Rong

    2018-03-01

    Integrating the processes of preparation of CaCO3:Eu3+ and its surface-coating, core-shell structured CaCO3:Eu3+@SiO2 phosphors with red emission were synthesized by the carbonation method and surface precipitation procedure using sodium silicate as silica source. The phase structure, thermal stability, morphology and luminescent property of the as-synthesized samples were characterized by X-ray diffraction, Fourier transform infrared spectrum, thermal analysis, field-emission scanning electron microscopy, transmission electron microscope and photoluminescence spectra. The experimental results show that Eu3+ ions as the luminescence center are divided into two types: one is at the surface of the CaCO3 and the other inhabits the site of Ca2+. For CaCO3:Eu3+@SiO2 phosphors, the SiO2 layers are continuously coated on the surface of CaCO3:Eu3+ and show a typical core-shell structure. After coated with SiO2 layer, the luminous intensity and the compatibility with the rubber matrix increase greatly. Additionally, the luminous intensity increases with the increasing of Eu3+ ions concentration in CaCO3 core and concentration quenching occurs when Eu3+ ions concentration exceeds 7.0 mol%, while it is 5.0 mol% for CaCO3:Eu3+ phosphors. Therefore, preparation of CaCO3:Eu3+@SiO2 phosphors can not only simplify the experimental process through integrating the preparation of CaCO3:Eu3+ and SiO2 layer, but also effectively increase the luminous intensities of CaCO3:Eu3+ phosphors. The as-obtained phosphors may have potential applications in the fields of optical materials and functional polymer composite materials, such as plastics and rubbers.

  3. Concentration effect of Tm3+ on cathodoluminescence properties of SiO2: Tm3+ and SiO2:Ho3+, Tm3+ systems

    CSIR Research Space (South Africa)

    Dhlamini, MS

    2012-05-01

    Full Text Available .physb.2011.09.091 Concentration effect of Tm3+ on cathodoluminescence properties of SiO2: Tm 3+ and SiO2:Ho 3+, Tm3+ systems M.S. Dhlamini, G.H. Mhlongo, H.C. Swart, O.M. Ntwaeaborwa, K.T. Hillie ABSTRACT: Cathodoluminescence (CL) properties of Si...O2 powders activated with thulium (Tm3+) and holmium (Ho3+) ions prepared by a sol–gel process were investigated. Different molar concentrations of Tm3+ co-doped with Ho3+ were studied. The 460 nm peak was monitored and the influence of the beam...

  4. Vacancy-type defects and their annealing processes in ion-implanted Si studied by a variable-energy positron beam

    International Nuclear Information System (INIS)

    Uedono, A.; Wei, L.; Tanigawa, S.; Sugiura, J.; Ogasawara, M.

    1992-01-01

    Vacancy-type defects in B + -, P + - and Si + -ion implanted SiO 2 (43 nm)/Si(100) and Si(100) were studied by a variable-energy positron beam. Depth distributions of vacancy-type defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. For 200-keV P + -implanted specimen with a dose of 5 x 10 13 P/cm 2 , the damaged layers induced by ion-implantation were found to extend far beyond the stopping range of P-atoms. For 80-keV B + -implanted SiO 2 (43 nm)/Si(100) specimens with different ion-currents, an increase of the ion-current introduced a homogeneous amorphous layer in the subsurface region. Dominant defect species in B + - and P + -implanted specimen were identified as vacancy clusters from their annealing behavior. (author)

  5. Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yurasov, D. V., E-mail: Inquisitor@ipm.sci-nnov.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Bobrov, A. I. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Daniltsev, V. M.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Pavlov, D. A. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Skorokhodov, E. V.; Shaleev, M. V.; Yunin, P. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2015-11-15

    Influence of the Ge layer thickness and annealing conditions on the parameters of relaxed Ge/Si(001) layers grown by molecular beam epitaxy via two-stage growth is investigated. The dependences of the threading dislocation density and surface roughness on the Ge layer thickness, annealing temperature and time, and the presence of a hydrogen atmosphere are obtained. As a result of optimization of the growth and annealing conditions, relaxed Ge/Si(001) layers which are thinner than 1 μm with a low threading dislocation density on the order of 10{sup 7} cm{sup –2} and a root mean square roughness of less than 1 nm are obtained.

  6. Evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers

    International Nuclear Information System (INIS)

    Frigeri, C.; Nasi, L.; Serenyi, M.; Khanh, N.Q.; Csik, A.; Szekrenyes, Zs.; Kamaras, K.

    2012-01-01

    Complete text of publication follows. Among the present available renewable energy sources, energy harvesting from sunlight by means of photovoltaic cells is the most attractive one. In order to win over the traditional energy resources both efficiency and cost effectiveness of photovoltaic conversion must be optimized as far as possible. Efficiency is basically improved by the use of multijunction cells containing semiconductors with different band-gap. In this respect, the III-V compounds guarantee the highest efficiency, up to 41.6 %, but they are quite expensive. The latter drawback also affects other compounds like CdTe and CuIn 1-x Ga x Se 2 (CIGS). Si based solar devices have lower efficiency but are much more cost effective. They can use either crystalline or amorphous Si thin layers or Si nanoparticles. As to the thin films, amorphous Si (a-Si) is preferred to crystalline Si as it has a wider band-gap (1.7 instead of 1.1 eV) thus harvesting a larger portion of solar energy. A tandem cell is formed by using a-SiGe which has a smaller band-gap tunable between 1.1 and 1.7 eV depending on the Ge content. The best value should be 1.4 eV since the material properties seem to degrade below this value whilst the photo-conductivity drops after light soaking if the band gap exceeds 1.4 eV. A key issue of amorphous Si, Ge and SiGe is the high density of defects in the band-gap mostly due to dangling bonds whose density is particularly high (even up to 5 x10 19 cm -3 ) since the lattice is significantly disordered with distorted bond angles and lengths. This increases the probability of rupture of the Si-Si (Ge-Ge) bonds, i.e., formation of dangling bonds. Owing to the fact that hydrogen with its single electron structure can close the dangling bonds, their density can be reduced even by 4 orders of magnitude by doping with hydrogen. However, H is unstable in the host lattice. In fact, several findings showed its evolution from the thin layer upon annealing and that

  7. Surface state of GaN after rapid-thermal-annealing using AlN cap-layer

    Energy Technology Data Exchange (ETDEWEB)

    El-Zammar, G., E-mail: georgio.elzammar@univ-tours.fr [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Khalfaoui, W. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Oheix, T. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Yvon, A.; Collard, E. [STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Cayrel, F.; Alquier, D. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France)

    2015-11-15

    Graphical abstract: Surface state of a crack-free AlN cap-layer reactive sputtered on GaN and annealed at high temperature showing a smooth, pit-free surface. - Highlights: • We deposit a crystalline AlN layer by reactive magnetron sputtering on GaN. • We show the effect of deposition parameters of AlN by reactive magnetron sputtering on the quality of the grown layer. • We demonstrate the efficiency of double cap-layer for GaN protection during high temperature thermal treatments. • We show an efficient selective etch of AlN without damaging GaN surface. - Abstract: Critical issues need to be overcome to produce high performance Schottky diodes on gallium nitride (GaN). To activate dopant, high temperature thermal treatments are required but damage GaN surface where hexagonal pits appear and prevent any device processing. In this paper, we investigated the efficiency of cap-layers on GaN during thermal treatments to avoid degradation. Aluminum nitride (AlN) and silicon oxide (SiO{sub x}) were grown on GaN by direct current reactive magnetron sputtering and plasma-enhanced chemical vapor deposition, respectively. AlN growth parameters were studied to understand their effect on the grown layers and their protection efficiency. Focused ion beam was used to measure AlN layer thickness. Crystalline quality and exact composition were verified using X-ray diffraction and energy dispersive X-ray spectroscopy. Two types of rapid thermal annealing at high temperatures were investigated. Surface roughness and pits density were evaluated using atomic force microscopy and scanning electron microscopy. Cap-layers wet etching was processed in H{sub 3}PO{sub 4} at 120 °C for AlN and in HF (10%) for SiO{sub x}. This work reveals effective protection of GaN during thermal treatments at temperatures as high as 1150 °C. Low surface roughness was obtained. Furthermore, no hexagonal pit was observed on the surface.

  8. The effect of the gate electrode on the C-V- characteristics of the structure M-TmF3-SiO2-Si

    International Nuclear Information System (INIS)

    Basily, R.R.

    1979-09-01

    The C-V characteristics of the structure M-TmF 3 -SiO 2 -Si, thermally treated at a temperature of 300 0 C for 15 minutes, were investigated. At higher temperatures to about 150 0 C, the hysteresis of the C-V characteristics is completely absent, whereas at room temperature hysteresis depends on the applied voltage and on the material of the gate electrode. The dependence of the flat band voltage shift on the applied voltage, the thickness of SiO 2 layer and the material of the gate electrode were measured. (author)

  9. Magnetic SiO2/Fe3O4 colloidal crystals

    International Nuclear Information System (INIS)

    Huang, C-K; Hou, C-H; Chen, C-C; Tsai, Y-L; Chang, L-M; Wei, H-S; Hsieh, K-H; Chan, C-H

    2008-01-01

    We proposed a novel technique to fabricate colloidal crystals by using monodisperse SiO 2 coated magnetic Fe 3 O 4 (SiO 2 /Fe 3 O 4 ) microspheres. The magnetic SiO 2 /Fe 3 O 4 microspheres with a diameter of 700 nm were synthesized in the basic condition with ferric sulfate, ferrous sulfate, tartaric acid and tetraethyl orthosilicate (TEOS) in the reaction system. Monodisperse SiO 2 /Fe 3 O 4 superparamagnetic microspheres have been successfully used to fabricate colloidal crystals under the existing magnetic field

  10. Adsorption of cationic dye on a biohybrid SiO2-alginate

    International Nuclear Information System (INIS)

    Barrón Zambrano, J A; Ávila Ortega, A; Muñoz Rodríguez, D; Carrera Figueiras, C; López-Pérez, A J

    2013-01-01

    In this work, a biohybrid material based on SiO 2 -alginate was obtained and its properties of adsorption evaluated using methylene blue as a model dye. The experimental results showed that the biohybrid SiO 2 -alginate has a higher adsorption ability compared to their base compounds (SiO 2 and alginate). Methylene blue adsorption is pH dependent, resulting in a maximum adsorption at pH = 8. The sorption kinetics rate is similar to SiO 2 . Kinetic data were fitted to a model of pseudosecond order. The experimental isotherms fit well the Langmuir model.

  11. Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

    International Nuclear Information System (INIS)

    Wang Yanrong; Yang Hong; Xu Hao; Luo Weichun; Qi Luwei; Zhang Shuxiang; Wang Wenwu; Zhu Huilong; Zhao Chao; Chen Dapeng; Ye Tianchun; Yan Jiang

    2017-01-01

    In the process of high- k films fabrication, a novel multi deposition multi annealing (MDMA) technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing (PDA) times. The equivalent oxide thickness (EOT) decreases when the annealing time(s) change from 1 to 2. Furthermore, the characteristics of SILC (stress-induced leakage current) for an ultra-thin SiO 2 /HfO 2 gate dielectric stack are studied systematically. The increase of the PDA time(s) from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes. (paper)

  12. Liquid-phase-deposited SiO2 on AlGaAs and its application

    International Nuclear Information System (INIS)

    Lee, Kuan-Wei; Huang, Jung-Sheng; Lu, Yu-Lin; Lee, Fang-Ming; Lin, Hsien-Cheng; Huang, Jian-Jun; Wang, Yeong-Her

    2011-01-01

    The silicon dioxide (SiO 2 ) on AlGaAs prepared by liquid phase deposition (LPD) at 40 °C has been explored. The LPD-SiO 2 film deposition rate is about 67 nm h −1 for the first hour. The leakage current density is about 1.21 × 10 −6 A cm −2 at 1 MV cm −1 . The interface trap density (D it ) and the flat-band voltage shift (ΔV FB ) are 1.28 × 10 12 cm −2 eV −1 and 0.5 V, respectively. After rapid thermal annealing in the N 2 ambient at 300 °C for 1 min, the leakage current density, D it , and ΔV FB can be improved to 4.24 × 10 −7 A cm −2 at 1 MV cm −1 , 1.7 × 10 11 cm −2 eV −1 , and 0.2 V, respectively. Finally, this study demonstrates the application of the LPD-SiO 2 film to the AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor

  13. Resistive switching of organic–inorganic hybrid devices of conductive polymer and permeable ultra-thin SiO2 films

    Science.gov (United States)

    Yamamoto, Shunsuke; Kitanaka, Takahisa; Miyashita, Tokuji; Mitsuishi, Masaya

    2018-06-01

    We propose a resistive switching device composed of conductive polymer (PEDOT:PSS) and SiO2 ultra-thin films. The SiO2 film was fabricated from silsesquioxane polymer nanosheets as a resistive switching layer. Devices with metal (Ag or Au)∣SiO2∣PEDOT:PSS architecture show good resistive switching performance with set–reset voltages as low as several hundred millivolts. The device properties and the working mechanism were investigated by varying the electrode material, surrounding atmosphere, and SiO2 film thickness. Results show that resistive switching is based on water and ion migration at the PEDOT:PSS∣SiO2 interface.

  14. ZnO nanowire co-growth on SiO2 and C by carbothermal reduction and vapour advection

    International Nuclear Information System (INIS)

    Vega, N C; Caram, J; Grinblat, G; Comedi, D; Wallar, R; LaPierre, R R; Tirado, M

    2012-01-01

    Vertically aligned ZnO nanowires (NWs) were grown on Au-nanocluster-seeded amorphous SiO 2 films by the advective transport and deposition of Zn vapours obtained from the carbothermal reaction of graphite and ZnO powders. Both the NW volume and visible-to-UV photoluminescence ratio were found to be strong functions of, and hence could be tailored by, the (ZnO+C) source–SiO 2 substrate distance. We observe C flakes on the ZnO NWs/SiO 2 substrates which exhibit short NWs that developed on both sides. The SiO 2 and C substrates/NW interfaces were studied in detail to determine growth mechanisms. NWs on Au-seeded SiO 2 were promoted by a rough ZnO seed layer whose formation was catalysed by the Au clusters. In contrast, NWs grew without any seed on C. A correlation comprising three orders of magnitude between the visible-to-UV photoluminescence intensity ratio and the NW volume is found, which results from a characteristic Zn partial pressure profile that fixes both O deficiency defect concentration and growth rate. (paper)

  15. Effect of Post-annealing on the Electrochromic Properties of Layer-by-Layer Arrangement FTO-WO3-Ag-WO3-Ag

    Science.gov (United States)

    Hoseinzadeh, S.; Ghasemiasl, R.; Bahari, A.; Ramezani, A. H.

    2018-03-01

    In the current study, composites of tungsten trioxide (W03) and silver (Ag) are deposited in a layer-by-layer electrochromic (EC) arrangement onto a fluorine-doped tin oxide coated glass substrate. Tungsten oxide nanoparticles are an n-type semiconductor that can be used as EC cathode material. Nano-sized silver is a metal that can serve as an electron trap center that facilitates charge departure. In this method, the WO3 and Ag nanoparticle powder were deposited by physical vapor deposition onto the glass substrate. The fabricated electrochromic devices (ECD) were post-annealed to examine the effect of temperature on their EC properties. The morphology of the thin film was characterized by scanning electron microscopy and atomic force microscopy. Structural analysis showed that the addition of silver dopant increased the size of the aggregation of the film. The film had an average approximate roughness of about 17.8 nm. The electro-optical properties of the thin film were investigated using cyclic voltammetry and UV-visible spectroscopy to compare the effects of different post-annealing temperatures. The ECD showed that annealing at 200°C provided better conductivity (maximum current of about 90 mA in the oxidation state) and change of transmittance (ΔT = 90% at the continuous switching step) than did the other thin films. The optical band gaps of the thin film showed that it allowed direct transition at 3.85 eV. The EC properties of these combinations of coloration efficiency and response time indicate that the WO3-Ag-WO3-Ag arrangement is a promising candidate for use in such ECDs.

  16. Magnetic interactions in high-energy ball-milled NiZnFe2O4/SiO2 composites

    International Nuclear Information System (INIS)

    Pozo Lopez, G.; Silvetti, S.P.; Urreta, S.E.; Cabanillas, E.D.

    2007-01-01

    Composites Ni 0.5 Zn 0.5 Fe 2 O 4 /SiO 2 are obtained after high-energy ball milling precursor oxides, in stoichiometric proportions, for 200 h at room temperature and further isothermal annealing for 1 h at 1273 K, under air and argon atmosphere, respectively. After 200 h grinding, a complex microstructure develops with small hematite crystals mixed with SiO 2 and remanent NiO and ZnO particles, and very small NiZn ferrite clusters, reaching a mean size of ∼9 nm. The high temperature treatments remove the hematite grains from the powder and promote the growth of NiZn ferrite grains to reach mean sizes nearly ∼20 nm. For treatments in oxidizing atmospheres, the major phases are SiO 2 and NiZn ferrite, while for annealing in Ar a new phase appears, fayalite, which is paramagnetic at room temperature. The M-H loops are all well described by the sum of a ferromagnetic and a superparamagnetic-like contribution. The observed properties are interpreted considering the different magnetic phases obtained, their crystal sizes and their mutual interactions

  17. Formation of thin DLC films on SiO2/Si substrate using FCVAD technique

    International Nuclear Information System (INIS)

    Bootkul, D.; Intarasiri, S.; Aramwit, C.; Tippawan, U.; Yu, L.D.

    2013-01-01

    Diamond-like carbon (DLC) films deposited on SiO 2 /Si substrate are attractive for novel sensitive and selective chemical sensors. According to the almost never ending of size reduction, a nm-thickness layer of the film is greatly required. However, formation of such a very thin DLC film on SiO 2 /Si substrate is challenging. In this experiment, DLC films were formed using our in-house Filtered Cathodic Vacuum Arc Deposition (FCVAD) facility by varying the bias voltage of 0 V, −250 V and −450 V with the arc voltage of 350 V, 450 V, 550 V, 650 V and 750 V for 10 min. Raman spectroscopy was applied for characterization of the film qualities and Transmission Electron Microscopy (TEM) was applied for cross sectional analysis. Results showed that films of thickness ranging from 10–50 nm were easily acquired depending on deposition conditions. Deconvolution of Raman spectra of these samples revealed that, when fixing the substrate bias but increasing the arc voltage from 350 to 750 V, the ratio between D-peak and G-peak intensity, namely I D /I G ratio, tended to reduce up to the arc voltage of 450 V, then increased up to the arc voltage of 650 V and finally decreased again. On the other hand, when fixing the arc voltage, the I D /I G ratio tended to decrease continuously as the increasing of bias voltage. It can be concluded that the bonding structure would evolve from a graphitic-like structure to a diamond-like structure as the substrate bias increases. Additionally, the sp 3 site should be maximized at the arc voltage ∼450 V for fixed bias voltage. It is expected that, at −450 V bias and 450 V arc, sp 3 fractions could be higher than 60%. However, in some cases, e.g. at low arc voltages, voids formed between the film and the amorphous SiO 2 substrate. Electron energy loss spectroscopy (EELS) of the C edge across the DLC indicated that the thicker DLC film had uniform chemistry and structure, whereas the thin DLC film showed changes in the edge shape

  18. Modification of photosensing property of CdS–Bi{sub 2}S{sub 3} bi-layer by thermal annealing and swift heavy ion irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Shaikh, Shaheed U.; Siddiqui, Farha Y. [Thin Film and Nanotechnology Laboratory, Department of Physics (India); Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India); Singh, Fouran; Kulriya, Pawan K. [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Phase, D.M. [UGC DAE Consortium for Scientific Research, Khandwa Road, Indore 452017 (India); Sharma, Ramphal, E-mail: ramphalsharma@yahoo.com [Thin Film and Nanotechnology Laboratory, Department of Physics (India); Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India)

    2016-02-01

    The CdS–Bi{sub 2}S{sub 3} bi-layer thin films have been deposited on Indium Tin Oxide (ITO) glass substrates at room temperature by Chemical Bath Deposition Technique (CBD) and bi-layer thin films were annealed in air atmosphere for 1 h at 250 {sup °}C. The air annealed sample was irradiated using Au{sup 9+} ions at the fluence 5 × 10{sup 11} ion/cm{sup 2} with 120 MeV energy. Effects of Swift Heavy Ion (SHI) irradiation on CdS–Bi{sub 2}S{sub 3} bi-layer thin films were studied. The results are explained on the basis annealing and high electronic excitation, using X-ray diffraction (XRD), Selective Electron Area Diffraction (SEAD), Atomic Force Microscopy (AFM), Raman Spectroscopy, UV spectroscopy and I–V characteristics. The photosensing property after illumination of visible light over the samples is studied. These as-deposited, annealed and irradiated bi-layer thin films are used to sense visible light at room temperature. - Graphical abstract: Schematic illustration of CdS–Bi{sub 2}S{sub 3} bi-layer thin film (a) As-deposited (b) Annealed (c) irradiated sample respectively (d) Model of bi-layer photosensor device (e) Graph of illumination intensity verses photosensitivity. - Highlights: • CdS–Bi{sub 2}S{sub 3} bi-layer thin film prepared at room temperature. • Irradiated using Au{sup 9+} ions at the fluence of 5 × 10{sup 11} ion/cm{sup 2} with 120 MeV energy. • Study of modification induced by irradiations. • Study of Photosensitivity after annealing and irradiation.

  19. Functionalized sio2 microspheres for extracting oil from produced water

    KAUST Repository

    Mishra, Himanshu

    2017-03-16

    Functionalized material, methods of producing the functionalized material, and use thereof for separation processes such as but not limited to use for separating and extracting a dissolved organic foulant, charged contaminant or oily matter or any combination thereof from water, such as produced water, are provided. In an embodiment, the functionalized material is a mineral material, such as mica, silica (e.g. an SiO2 microsphere) or a metal oxide, and the outer surface of the material is functionalized with an alkyl chain or a perfluorinated species. In an embodiment, the method of making the functionalized material, includes: a) providing a mineral material; b) providing an alkyl chain and/or a perfluorinated species, the alkyl chain or perfluorinated species selected to dissolve organic foulants, charged contaminants or oily matter from water or any combination thereof; c) hydroxylating the material via a concentrated acid solution or a basic solution; and d) grafting the alkyl chain and/or the perfluorinated species onto the material via a silanation reaction.

  20. Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Youngseok Lee

    2012-01-01

    Full Text Available It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0 which improves the efficiency of HIT solar cell. The ultrathin thermal passivation silicon oxide (SiO2 layer was deposited by RTO system in the temperature range 500–950°C for 2 to 6 minutes. The thickness of the silicon oxide layer was affected by RTO annealing temperature and treatment time. The best value of surface recombination velocity was recorded for the sample treated at a temperature of 850°C for 6 minutes at O2 flow rate of 3 Lpm. A surface recombination velocity below 25 cm/s was obtained for the silicon oxide layer of 4 nm thickness. This ultrathin SiO2 layer was employed for the fabrication of HIT solar cell structure instead of a-Si:H, (i layer and the passivation and tunneling effects of the silicon oxide layer were exploited. The photocurrent was decreased with the increase of illumination intensity and SiO2 thickness.

  1. Characterization of the effects of nitrogen and hydrogen passivation on SiO2/4H-SiC interface by low temperature conductance measurements

    International Nuclear Information System (INIS)

    Wang Yiyu; Peng Zhaoyang; Shen Huajun; Tang Yachao; Liu Xinyu; Li Chengzhan; Wu Jia; Zhao Yanli; Chen Ximing; Liu Kean

    2016-01-01

    We investigate the effects of NO annealing and forming gas (FG) annealing on the electrical properties of a SiO 2 /SiC interface by low-temperature conductance measurements. With nitrogen passivation, the density of interface states (D IT ) is significantly reduced in the entire energy range, and the shift of flatband voltage, ΔV FB , is effectively suppressed to less than 0.4 V. However, very fast states are observed after NO annealing and the response frequencies are higher than 1 MHz at room temperature. After additional FG annealing, the D IT and ΔV FB are further reduced. The values of the D IT decrease to less than 10 11 cm −2 eV −1 for the energy range of E C − E T > 0.4 eV. It is suggested that the fast states in shallow energy levels originated from the N atoms accumulating at the interface by NO annealing. Though FG annealing has a limited effect on these shallow traps, hydrogen can terminate the residual Si and C dangling bonds corresponding to traps at deep energy levels and improve the interface quality further. It is indicated that NO annealing in conjunction with FG annealing will be a better post-oxidation process method for high performance SiC MOSFETs. (paper)

  2. Design and Synthesis of Hierarchical SiO2@C/TiO2 Hollow Spheres for High-Performance Supercapacitors.

    Science.gov (United States)

    Zhang, Ying; Zhao, Yan; Cao, Shunsheng; Yin, Zhengliang; Cheng, Li; Wu, Limin

    2017-09-06

    TiO 2 has been widely investigated as an electrode material because of its long cycle life and good durability, but the relatively low theoretical capacity restricts its practical application. Herein, we design and synthesize novel hierarchical SiO 2 @C/TiO 2 (HSCT) hollow spheres via a template-directed method. These unique HSCT hollow spheres combine advantages from both TiO 2 such as cycle stability and SiO 2 with a high accessible area and ionic transport. In particular, the existence of a C layer is able to enhance the electrical conductivity. The SiO 2 layer with a porous structure can increase the ion diffusion channels and accelerate the ion transfer from the outer to the inner layers. The electrochemical measurements demonstrate that the HSCT-hollow-sphere-based electrode manifests a high specific capacitance of 1018 F g -1 at 1 A g -1 which is higher than those for hollow TiO 2 (113 F g -1 ) and SiO 2 /TiO 2 (252 F g -1 ) electrodes, and substantially higher than those of all the previously reported TiO 2 -based electrodes.

  3. A study of vacancy-type defects in B+-implanted SiO2/Si by a slow positron beam

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro; Sugiura, Jun; Ogasawara, Makoto.

    1989-01-01

    Variable-energy (0∼30 keV) positron beam studies have been carried out on 80 keV B + -implanted SiO 2 (43 nm)/Si specimens. Doppler broadening profiles of the positron annihilation as a function of the incident positron energy were shown to be quite sensitive for the detection of vacancy-type defects introduced by B + -implantation. The average depth of the defected regions was found to shift towards the surface of the specimen with increasing the dose of B + ions. This effect is attributed to the accumulation of vacancy-type defects at the SiO 2 /Si interface. Dominant defect species were identified as vacancy clusters by their annealing stage. (author)

  4. Effect of rapid thermal annealing observed by photoluminescence measurement in GaAs1-xN x layers

    International Nuclear Information System (INIS)

    Bousbih, F.; Bouzid, S.B.; Hamdouni, A.; Chtourou, R.; Harmand, J.C.

    2005-01-01

    A set of GaAs 1-x N x samples with small nitrogen content were investigated by photoluminescence (PL) measurements as function of irradiance in order to investigate the effect of rapid thermal annealing (RTA) on photoluminescence (PL) properties. The analysis of PL spectra as function of irradiance and nitrogen content shows that the PL spectra associated to the GaAs 1- x N x layers are the result of the nitrogen localized state recombination. The results are examined as a consequence of a rapid thermal annealing (RTA). The variation of the emission band peak energy (E p ), at 10 K as a function of irradiance, is fitted by a theoretical model taking into account two types of nitrogen localized states. The variation of the PL intensity versus irradiance in the range from 1.59 to 159 W/cm 2 for different GaAs 1-x N x samples confirm that the PL spectra result from the nitrogen localized state recombination

  5. Effect of Annealed Oxides on the Formation of Inhibition Layer During Hot-Dip Galvanizing of 590Mpa Trip Steel

    International Nuclear Information System (INIS)

    Kim, Seong Hwan; Huh, Joo Youl; Lee, Suk Kyu; Park, Rho Bum; Kim, Jong Sang

    2011-01-01

    The selective surface oxidation of a transformation-induced-plasticity (TRIP) steel containing 1.6 wt.% Mn and 1.5 wt.% Si during annealing at 800 .deg. C was investigated for its influence on the formation of an inhibition layer during hot-dip galvanizing. The selective oxidation of the alloying elements and the oxide morphology were significantly influenced by the annealing atmosphere. The pure N 2 atmosphere with a dew point -40 .deg. C promoted the selective oxidation of Mn as a crystalline Mn 2 SiO 4 phase, whereas the N 2 + 10% H 2 atmosphere with the same dew point -40 .deg. C promoted the selective oxidation of Si as an amorphous Si-rich oxide phase. During hot-dip galvanizing, the Mn 2 SiO 4 phase was reduced more readily by Al in the Zn bath than the Si-rich oxide phase. Consequently, the pure N 2 atmosphere resulted in a higher formation rate of Fe 2 Al 5 particles at the Zn/steel interface and better galvanizability than the N 2 + 10% H 2 atmosphere

  6. Effect of Annealed Oxides on the Formation of Inhibition Layer During Hot-Dip Galvanizing of 590Mpa Trip Steel

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seong Hwan; Huh, Joo Youl [Korea University, Seoul (Korea, Republic of); Lee, Suk Kyu; Park, Rho Bum; Kim, Jong Sang [POSCO Technical Research Laboratories, Gwangyang (Korea, Republic of)

    2011-02-15

    The selective surface oxidation of a transformation-induced-plasticity (TRIP) steel containing 1.6 wt.% Mn and 1.5 wt.% Si during annealing at 800 .deg. C was investigated for its influence on the formation of an inhibition layer during hot-dip galvanizing. The selective oxidation of the alloying elements and the oxide morphology were significantly influenced by the annealing atmosphere. The pure N{sub 2} atmosphere with a dew point -40 .deg. C promoted the selective oxidation of Mn as a crystalline Mn{sub 2}SiO{sub 4} phase, whereas the N{sub 2} + 10% H{sub 2} atmosphere with the same dew point -40 .deg. C promoted the selective oxidation of Si as an amorphous Si-rich oxide phase. During hot-dip galvanizing, the Mn{sub 2}SiO{sub 4} phase was reduced more readily by Al in the Zn bath than the Si-rich oxide phase. Consequently, the pure N{sub 2} atmosphere resulted in a higher formation rate of Fe{sub 2}Al{sub 5} particles at the Zn/steel interface and better galvanizability than the N{sub 2} + 10% H{sub 2} atmosphere.

  7. Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

    International Nuclear Information System (INIS)

    Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N; Uraoka, Yukiharu; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi

    2016-01-01

    We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ∼13 cm 2 V −1 s −1 and small threshold voltage which varied from ∼0–3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs. (paper)

  8. Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

    Science.gov (United States)

    Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N.; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi; Uraoka, Yukiharu

    2016-01-01

    We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ~13 cm2 V-1 s-1 and small threshold voltage which varied from ~0-3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs.

  9. Investigation of modified thin SnO2 layers treated by rapid thermal annealing by means of hollow cathode spectroscopy and AFM technique

    International Nuclear Information System (INIS)

    Djulgerova, R; Popova, L; Beshkov, G; Petrovic, Z Lju; Rakocevic, Z; Mihailov, V; Gencheva, V; Dohnalik, T

    2006-01-01

    By means of hollow cathode spectroscopy and atomic force microscopy the surface morphology and composition of SnO 2 thin film, modified with hexamethyldisilazane after rapid thermal annealing treatment (800-1200 deg. C), are investigated. Formation of crystalline structure is suggested at lower temperatures. Depolimerization, destruction and dehydration are developed at temperatures of 1200 deg. C. It is shown that the rapid thermal annealing treatment could modify both the surface morphology and the composition of the layer, thus changing the adsorption ability of the sensing layer. The results confirm the ability of hollow cathode emission spectroscopy for depth profiling of new materials especially combined with standard techniques

  10. Synthesis of TiO2-doped SiO2 composite films and its applications

    Indian Academy of Sciences (India)

    Wintec

    structure of the titanium oxide species in the TiO2-doped SiO2 composite films and the photocatalytic reactiv- ity in order to ... gaku D-max γA diffractometer with graphite mono- chromized ... FT–IR absorption spectra of TiO2-doped SiO2 com-.

  11. Assembly of Fe3O4 nanoparticles on SiO2 monodisperse spheres

    Indian Academy of Sciences (India)

    Assembly of Fe3O4 nanoparticles on SiO2 monodisperse spheres. K C BARICK and D BAHADUR*. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay,. Mumbai 400 076, India. Abstract. The assembly of superparamagnetic Fe3O4 nanoparticles on submicroscopic SiO2 ...

  12. Excimer laser crystallization of InGaZnO4 on SiO2 substrate

    NARCIS (Netherlands)

    Chen, T.; Wu, M.Y.; Ishihara, R.; Nomura, K.; Kamiya, T.; Hosono, H.; Beenakker, C.I.M.

    2011-01-01

    In this paper, we were able to crystallize InGaZnO4 (IGZO) by excimer laser on SiO2 substrate. It was observed that uniform [0001] textured polycrystalline IGZO film has been obtained without any grain boundaries and oxygen vacancies on SiO2 substrate. This process is very promising in fabricating

  13. Water droplet behavior on superhydrophobic SiO2 nanocomposite films during icing/deicing cycles

    NARCIS (Netherlands)

    Lazauskas, A.; Guobiene, A.; Prosycevas, I.; Baltrusaitis, V.; Grigaliunas, V.; Narmontas, P.; Baltrusaitis, Jonas

    2013-01-01

    This work investigates water droplet behavior on superhydrophobic (water contact angle value of 162 ± 1°) SiO2 nanocomposite films subjected to repetitive icing/deicing treatments, changes in SiO2 nanocomposite film surface morphology and their non-wetting characteristics. During the experiment,

  14. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    KAUST Repository

    Lim, Namsoo; Yoo, Tae Jin; Kim, Jin Tae; Pak, Yusin; Kumaresan, Yogeenth; Kim, Hyeonghun; Kim, Woochul; Lee, Byoung Hun; Jung, Gun Young

    2018-01-01

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates

  15. Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

    KAUST Repository

    Cheng, Yingchun

    2013-01-01

    Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.

  16. Effect of barrier layers on the properties of indium tin oxide thin films on soda lime glass substrates

    International Nuclear Information System (INIS)

    Lee, Jung-Min; Choi, Byung-Hyun; Ji, Mi-Jung; An, Yong-Tae; Park, Jung-Ho; Kwon, Jae-Hong; Ju, Byeong-Kwon

    2009-01-01

    In this paper, the electrical, structural and optical properties of indium tin oxide (ITO) films deposited on soda lime glass (SLG) haven been investigated, along with high strain point glass (HSPG) substrate, through radio frequency magnetron sputtering using a ceramic target (In 2 O 3 :SnO 2 , 90:10 wt.%). The ITO films deposited on the SLG show a high electrical resistivity and structural defects compared with those deposited on HSPG due to the Na ions from the SLG diffusing to the ITO film by annealing. However, these properties can be improved by intercalating a barrier layer of SiO 2 or Al 2 O 3 between the ITO film and the SLG substrate. SIMS analysis has confirmed that the barrier layer inhibits the Na ion's diffusion from the SLG. In particular, the ITO films deposited on the Al 2 O 3 barrier layer, show better properties than those deposited on the SiO 2 barrier layer.

  17. The role of annealing temperature variation on ZnO nanorods array deposited on TiO2 seed layer

    Science.gov (United States)

    Asib, N. A. M.; Aadila, A.; Afaah, A. N.; Rusop, M.; Khusaimi, Z.

    2018-05-01

    Seed layer of Titanium dioxide (TiO2) by sol-gel spin coating technique were coated on glass substrate to grow Zinc oxide nanorods (ZNR) by solution-immersion method. The fabricated ZNR were annealed at various temperatures ranged from 400 to 600° C. FESEM images revealed that smaller ZNR were densely grown at optimum temperature of 450 and 500°C. Meanwhile, for all samples a dominant (0 0 2) diffraction peak of ZNR recorded by XRD patterns was at 34.4° which corresponding to hexagonal ZNR with a wurtzite structure. UV-Vis absorbance spectra showed the maximum absorption properties at UV region were detected at 450 and 500°C. The samples also showed high absorbance values at visible region.

  18. Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes.

    Science.gov (United States)

    Kim, Kyeong Heon; Kim, Su Jin; Park, Sang Young; Kim, Tae Geun

    2015-10-01

    The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples--an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture--were prepared and annealed at different temperatures ranging from 100 °C to 500 °C for comparison. Among these samples, the sample annealed at 300 °C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/square and a high UV transmittance of 87.1% at 300 nm.

  19. Precipitation of amorphous SiO2 particles and their properties

    Directory of Open Access Journals (Sweden)

    S. Musić

    2011-03-01

    Full Text Available The experimental conditions were optimized for the synthesis of amorphous SiO2 particles by the reaction of neutralization of sodium silicate solution with H2SO4 solution. Amorphous SiO2 particles were characterized by XRD, FT-IR, FE-SEM, EDS and microelectrophoresis. The amorphous peak was located at 2θ = 21.8º in the XRD pattern. Primary SiO2 particles were ~ 15 to ~ 30 nm in size and they aggregated into bigger particles. Amorphous SiO2 particles showed a specific surface area up to 130 m²g-1, dependent on the parameters of the precipitation process. The EDS spectrum of amorphous SiO2 particles did not show contamination with sulfate or other ions, which cannot be excluded in traces. pHzpc =1.7 was obtained by microelectrophoresis.

  20. Oxidation of atomically thin MoS2 on SiO2

    Science.gov (United States)

    Yamamoto, Mahito; Cullen, William; Einstein, Theodore; Fuhrer, Michael

    2013-03-01

    Surface oxidation of MoS2 markedly affects its electronic, optical, and tribological properties. However, oxidative reactivity of atomically thin MoS2 has yet to be addressed. Here, we investigate oxidation of atomic layers of MoS2 using atomic force microscopy and Raman spectroscopy. MoS2 is mechanically exfoliated onto SiO2 and oxidized in Ar/O2 or Ar/O3 (ozone) at 100-450 °C. MoS2 is much more reactive to O2 than an analogous atomic membrane of graphene and monolayer MoS2 is completely etched very rapidly upon O2 treatment above 300 °C. Thicker MoS2 (> 15 nm) transforms into MoO3 after oxidation at 400 °C, which is confirmed by a Raman peak at 820 cm-1. However, few-layer MoS2 oxidized below 400 °C exhibits no MoO3 Raman mode but etch pits are formed, similar to graphene. We find atomic layers of MoS2 shows larger reactivity to O3 than to O2 and monolayer MoS2 transforms chemically upon O3 treatment even below 100 °C. Work supported by the U. of Maryland NSF-MRSEC under Grant No. DMR 05-20741.

  1. Stability of Trapped Electrons in SiO(2)

    International Nuclear Information System (INIS)

    Fleetwood, D.M.; Winokur, P.S.

    1999-01-01

    Thermally stimulated current and capacitance voltage methods are used to investigate the thermal stability of trapped electrons associated with radiation-induced trapped positive charge in metal-oxide-semiconductor capacitors. The density of deeply trapped electrons in radiation-hardened 45 nm oxides exceeds that of shallow electrons by a factor of ∼3 after radiation exposure, and by up to a factor of 10 or more during biased annealing. Shallow electron traps anneal faster than deep traps, and seem to be at least qualitatively consistent with the model of Lelis et al. Deeper traps maybe part of a fundamentally distinct dipole complex, and/or have shifted energy levels that inhibit charge exchange with the Si

  2. Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer

    Energy Technology Data Exchange (ETDEWEB)

    Dikareva, N. V., E-mail: dnat@ro.ru; Vikhrova, O. V.; Zvonkov, B. N. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Malekhonova, N. V. [Lobachevsky State University of Nizhni Novgorod (Russian Federation); Nekorkin, S. M. [Lobachevsky State University of Nizhni Novgorod, Physico-Technical Research Institute (Russian Federation); Pirogov, A. V.; Pavlov, D. A. [Lobachevsky State University of Nizhni Novgorod (Russian Federation)

    2015-01-15

    Heterostructures containing single GaAsSb/GaAs quantum wells and bilayer GaAsSb/InGaAs quantum wells are produced by metal-organic vapor-phase epitaxy at atmospheric pressure. The growth temperature of the quantum-confined layers is 500–570°C. The structural quality of the samples and the quality of heterointerfaces of the quantum wells are studied by the high-resolution transmission electron microscopy of cross sections. The emission properties of the heterostructures are studied by photoluminescence measurements. The structures are subjected to thermal annealing under conditions chosen in accordance with the temperature and time of growth of the upper cladding p-InGaP layer during the formation of GaAs/InGaP laser structures with an active region containing quantum-confined GaAsSb layers. It is found that such heat treatment can have a profound effect on the emission properties of the active region, only if a bilayer GaAsSb/InGaAs quantum well is formed.

  3. Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

    International Nuclear Information System (INIS)

    Yan Wensheng; Li Zhongrui; Sun Zhihu; Wei Shiqiang; Kolobov, A. V.

    2007-01-01

    The formation mechanism of Ge nanocrystals for Ge (60 mol%) embedded in a SiO2 matrix grown on Si(001) and quartz-glass substrates was studied by fluorescence x-ray absorption fine structure (XAFS). It was found that the formation of Ge nanocrystals strongly depends on the properties of the substrate materials. In the as-prepared samples, Ge atoms exist in amorphous Ge and GeO2 phases. At the annealing temperature of 1073 K, on the quartz-glass substrate, Ge nanocrystals are only formed predominantly from the amorphous Ge phase in the as-prepared sample. However, on the Si(100) substrate the Ge nanocrystals are generated partly from amorphous Ge, and partly from GeO2 phases through the permutation reaction with Si substrate. Quantitative analysis revealed that about 10% of GeO2 in as-prepared sample permutated with Si in the wafer and formed Ge nanocrystals

  4. Seed-mediated photodeposition route to Ag-decorated SiO2@TiO2 microspheres with ideal core-shell structure and enhanced photocatalytic activity

    Science.gov (United States)

    Ma, Jianqi; Guo, Xiaohua; Ge, Hongguang; Tian, Guanghui; Zhang, Qiang

    2018-03-01

    Ag-decorated SiO2@TiO2 microspheres (SiO2@TiO2-Ag) with ideal core-shell structure and enhanced photocatalytic activity were successfully fabricated by combining both coating anatase TiO2 on the surface of SiO2 spheres and subsequent depositing face-centered cubic Ag nanoparticles (NPs) on the coated TiO2 surface via novel sol-gel method and Ag-seed-mediated photodeposition (PD) route, respectively. The morphology, structure, composition and optical properties of the resulting composites were characterized in detail. The results reveal that the monodisperse SiO2 spheres of ∼260 nm were covered uniformly and perfectly by the TiO2 nanoparticle coating layer with the thickness of ca. 55 nm by the novel sol-gel method. Further, homogeneously and highly dispersed Ag NPs with an average size of 8 ± 1.5 nm were strongly anchored onto the TiO2 surface in SiO2@TiO2 core-shell spheres by the modified PD process (Ag-seed-mediated PD route), whereas polydispersed Ag aggregates and detached Ag NPs were irregularly deposited over the TiO2 surface in previous works, which is the inherent problem and has not been effectively solved for depositing noble metal NPs such as Au, Ag, Pt, Pd on TiO2 surface by conventional PD method. The formation mechanism of small and uniformly dispersed Ag NPs with narrow size distribution via the modified PD method is tentatively explained by both nucleation kinetics and growth kinetics. The key reason is that the pre-deposited seeds firmly tethered on SiO2@TiO2 spheres served as nucleation sites and anchoring points for the further nucleation and subsequent growth of Ag via photoreduction of Ag+.

  5. Variation in the Optical Properties of the SiC-SiO2 Composite Antireflection Layer in Crystalline Silicon Solar Cells by Annealing

    Science.gov (United States)

    Jannat, Azmira; Li, Zhen Yu; Akhter, M. Shaheer; Yang, O.-Bong

    2017-11-01

    This study showed the effects of annealing on a sol-gel-derived SiC-SiO2 composite antireflection (AR) layer and investigated the optical and photovoltaic properties of crystalline silicon (Si) solar cells. The SiC-SiO2 composite AR coating showed a considerable decrease in reflectance from 7.18% to 3.23% at varying annealing temperatures of 450-800°C. The refractive indices of the SiC-SiO2 composite AR layer were tuned from 2.06 to 2.45 with the increase in annealing temperature. The analysis of the current density-voltage characteristics indicated that the energy conversion efficiencies of the fabricated Si solar cells gradually increased from 16.99% to 17.73% with increasing annealing temperatures of 450-800°C. The annealing of the SiC-SiO2 composite AR layer in Si solar cells was crucial to improving the optical, morphological, and photovoltaic properties.

  6. Vancomycin-modified Fe3O4@SiO2@Ag microflowers as effective antimicrobial agents

    Directory of Open Access Journals (Sweden)

    Wang C

    2017-04-01

    Full Text Available Chongwen Wang,1,2,* Kehan Zhang,2,* Zhe Zhou,2,* Qingjun Li,2 Liting Shao,2 Rong Zhang Hao,3 Rui Xiao,2 Shengqi Wang1,2 1College of Life Sciences & Bio-Engineering, Beijing University of Technology, 2Beijing Key Laboratory of New Molecular Diagnosis Technologies for Infectious Diseases, Beijing Institute of Radiation Medicine, Beijing, 3Institute for Disease Control and Prevention, Academy of Military Medical Sciences, Beijing, People’s Republic of China *These authors contributed equally to this work Abstract: Nanomaterials combined with antibiotics exhibit synergistic effects and have gained increasing interest as promising antimicrobial agents. In this study, vancomycin-modified magnetic-based silver microflowers (Van/Fe3O4@SiO2@Ag microflowers were rationally designed and prepared to achieve strong bactericidal ability, a wide antimicrobial spectrum, and good recyclability. High-performance Fe3O4@SiO2@Ag microflowers served as a multifunction-supporting matrix and exhibited sufficient magnetic response property due to their 200 nm Fe3O4 core. The microflowers also possessed a highly branched flower-like Ag shell that provided a large surface area for effective Ag ion release and bacterial contact. The modified-vancomycin layer was effectively bound to the cell wall of bacteria to increase the permeability of the cell membrane and facilitate the entry of the Ag ions into the bacterium, resulting in cell death. As such, the fabricated Van/Fe3O4@SiO2@Ag microflowers were predicted to be an effective and environment-friendly antibacterial agent. This hypothesis was verified through sterilization of Gram-negative Escherichia coli and Gram-positive methicillin-resistant Staphylococcus aureus, with minimum inhibitory concentrations of 10 and 20 µg mL-1, respectively. The microflowers also showed enhanced effect compared with bare Fe3O4@SiO2@Ag microflowers and free-form vancomycin, confirming the synergistic effects of the combination of the

  7. Effect of a silver contact layer on the annealing and quench behaviour of HTS tapes

    International Nuclear Information System (INIS)

    Handke, Joerg

    2009-01-01

    The present thesis deals with the optimization of HTS band conductors of the 2nd generation. Thereby on the one hand the charging behaviour of the superconducting layers should be improved in a continuous process. On the other hand the electrical stabilization of coated conductors for the application in superconducting current limiters was studied. It was shown that for both question formulations the configuration of the band concerning the epitactical metal layer plays a deciding role, so that the two first independent seeming problems can be viewed in a common context.

  8. Fabrication and properties of highly luminescent materials from Tb(OH)3-SiO2 and Tb(OH)3-SiO2:Eu3+ nanotubes

    International Nuclear Information System (INIS)

    Tran Thu Huong; Tran Kim Anh; Le Quoc Minh

    2009-01-01

    Luminescent nanomaterials with one-dimensional (1D) structures have attracted much attention due to their unique properties and potential applications in nanophotonics and nanobiophotonics. In this paper, we report a synthesis of terbium - hydroxide - at - silica Tb(OH) 3 -SiO 2 and Tb(OH) 3 -SiO 2 :Eu 3+ nanotubes. Terbium - hydroxide tubes were synthesized by soft template method. The size of the tubes can be controlled precisely and have outer diameters ranging from 80 to 120 nm, wall thickness of about 30 nm, and lengths ranging from 300 to 800 nm. To fabricate core/shell materials, the seed growth method is used. FESEM, X-ray diffraction, Raman spectra of Tb(OH) 3 and Tb(OH) 3 -SiO 2 nanotubes were investigated. The photoluminescence (PL) spectrum of Tb(OH) 3 under 325 nm excitation consists of four main peaks at 488, 542, 582, and 618 nm. Furthermore, a preliminary suggestion for the mechanism of growth of the Tb(OH) 3 nanotubes using the soft - template synthesis technique has been proposed. The PL intensity from Tb(OH) 3 -SiO 2 or Tb(OH) 3 -SiO 2 :Eu 3+ nanotubes is much stronger than that of Tb(OH) 3 .

  9. Temperature-dependent field-effect carrier mobility in organic thin-film transistors with a gate SiO2 dielectric modified by H2O2 treatment

    Science.gov (United States)

    Lin, Yow-Jon; Hung, Cheng-Chun

    2018-02-01

    The effect of the modification of a gate SiO2 dielectric using an H2O2 solution on the temperature-dependent behavior of carrier transport for pentacene-based organic thin-film transistors (OTFTs) is studied. H2O2 treatment leads to the formation of Si(-OH) x (i.e., the formation of a hydroxylated layer) on the SiO2 surface that serves to reduce the SiO2 capacitance and weaken the pentacene-SiO2 interaction, thus increasing the field-effect carrier mobility ( µ) in OTFTs. The temperature-dependent behavior of carrier transport is dominated by the multiple trapping model. Note that H2O2 treatment leads to a reduction in the activation energy. The increased value of µ is also attributed to the weakening of the interactions of the charge carriers with the SiO2 dielectric that serves to reduce the activation energy.

  10. Target swapping in PLD: An efficient approach for CdS/SiO2 and CdS:Ag(1%)/SiO2 nanocomposite thin films with enhanced luminescent properties

    International Nuclear Information System (INIS)

    Saxena, Nupur; Kumar, Pragati; Gupta, Vinay

    2017-01-01

    A novel synthesis method for luminescent and by-products (like CdO) free CdS/SiO 2 and CdS:Ag(1%)/SiO 2 (i.e. 1%Ag doped CdS/SiO 2 ) nanocomposite thin films at room temperature by pulsed laser deposition is reported. Targets of CdS, CdS:Ag(1%) and SiO 2 are used to deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposite thin films by swapping them at a frequency ratio of 2:8 laser pulses/sec. X-ray photoelectron spectroscopy analysis ensures the ratio of CdS to SiO 2 in nanocomposite as 21:79 which is nearly same as the ratio of incident pulses/sec (i.e. 2:8) on the two targets. Transmission electron micrographs visualize the formation of CdS/ CdS:Ag(1%) nanocrystals in nanocomposite systems after annealing at 500 °C. Highly intense and broad red emission is achieved from CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposites. The efficiencies of emission from pristine CdS:SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposites are found to be enhanced by approximately two times as compared to sole nanocrystalline CdS and CdS:Ag(1%) thin films respectively and further enhanced upto 7 times on annealing the nanocomposite systems at 500 °C. - Graphical abstract: A modified synthesis method for luminescent and by-products (like CdO) free undoped &1% Ag doped CdS/SiO 2 (deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 ) nanocomposite thin films at room temperature by pulsed laser deposition is reported. Targets of CdS or CdS:Ag(1%) and SiO 2 are used to deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposite thin films by swapping them at a frequency of 2:8 pulses/sec. X-ray photoelectron spectroscopy analysis ensures the ratio of CdS to SiO 2 in nanocomposite as 21:79 which is nearly same as the ratio of incident pulses/sec (2:8) on the two targets. Transmission electron micrographs visualize the formation of CdS nanocrystals in nanocomposite systems after annealing at 500 °C. Intense and broad red emission is achieved from deposit CdS/SiO 2 and CdS:Ag(1%)/SiO 2 nanocomposites. The efficiency of

  11. Transparent Conducting Nb-Doped TiO2 Electrodes Activated by Laser Annealing for Inexpensive Flexible Organic Solar Cells

    Science.gov (United States)

    Lee, Jung-Hsiang; Lin, Chia-Chi; Lin, Yi-Chang

    2012-01-01

    A KrF excimer laser (λ= 248 nm) has been adopted for annealing cost-effective Nb-doped TiO2 (NTO) films. Sputtered NTO layers were annealed on SiO2-coated flexible poly(ethylene terephthalate) (PET) substrates. This local laser annealing technique is very useful for the formation of anatase NTO electrodes used in flexible organic solar cells (OSCs). An amorphous NTO film with a high resistivity and a low transparency was transformed significantly into a conductive and transparent anatase NTO electrode by laser irradiation. The 210 nm anatase NTO film shows a sheet resistance of 50 Ω and an average optical transmittance of 83.5% in the wavelength range from 450 to 600 nm after annealing at 0.25 J/cm2. The activation of Nb dopants and the formation of the anatase phase contribute to the high conductivity of the laser-annealed NTO electrode. Nb activation causes an increase in the optical band gap due to the Burstein-Moss effect. The electrical properties are in agreement with the material characteristics determined by X-ray diffraction (XRD) analysis and secondary ion mass spectrometry (SIMS). The irradiation energy for the NTO electrode also affects the performance of the organic solar cell. The laser annealing technique provides good properties of the anatase NTO film used as a transparent electrode for flexible organic solar cells (OSCs) without damage to the PET substrate or layer delamination from the substrate.

  12. Sheet-like Li3V2(PO4)3 nanocomposite coated by SiO2 + C with better electrochemical properties for lithium-ion batteries

    International Nuclear Information System (INIS)

    Lai, Chunyan; Wu, Tingting; Wang, Zhen

    2016-01-01

    Sheet-like Li 3 V 2 (PO 4 ) 3 nanocomposite coated by SiO 2  + C layer was synthesized with one-step solid-state method. Dihydroxydiphenylsilane (DPSD) was used as the source of SiO 2 and C. The sheet-like Li 3 V 2 (PO 4 ) 3 nanocomposite has a thickness in the range of 20–30 nm. Because of the SiO 2  + C-coated layer and the sheet-like morphology, the Li 3 V 2 (PO 4 ) 3 /(SiO 2  + C) composites show better stability and higher capacity than pure Li 3 V 2 (PO 4 ) 3 material and granular Li 3 V 2 (PO 4 ) 3 /(SiO 2  + C) composites. The best sample, Li 3 V 2 (PO 4 ) 3 /(SiO 2  + C)(2:8), shows a discharge capacity of 193.7 mAh g −1 at 1C within the voltage range of 3.0–4.8 V and retains almost 90 % of the capacity after 50 cycles.

  13. Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

    Directory of Open Access Journals (Sweden)

    Chin-Sheng Pang

    2014-04-01

    Full Text Available In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S, Al/HfO2/SiO2/Si (H, and Al/3HfO2/SiO2/Si (3H were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO2 dielectric layer, which leads to larger numbers of carriers crowded through the sweep of VG before the domination of tunneling current. Additionally, the HfO2 dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e−-h+ pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO2 stacking layers are importance to MOS(p tunneling photo diodes.

  14. Enhanced antioxidation and microwave absorbing properties of SiO2-coated flaky carbonyl iron particles

    Science.gov (United States)

    Zhou, Yingying; Xie, Hui; Zhou, Wancheng; Ren, Zhaowen

    2018-01-01

    SiO2 was successfully coated on the surface of flaky carbonyl iron particles using a chemical bath deposition method in the presence of 3-aminopropyl triethoxysilane (APTES). The morphologies, composition, valence states of elements, as well as antioxidation and electromagnetic properties of the samples were characterized by scanning electron microscope (SEM), energy dispersive spectrometer (EDS), X-ray photoelectron spectroscopy (XPS), thermogravimetric (TG) and microwave network analyzer. TG curve shows the obvious weight gain of carbonyl iron was deferred to 360 °C after SiO2-coated, which can be ascribed to the exits of SiO2 overlayer. Compared with the raw carbonyl iron, SiO2-coated sample shows good wave absorption performance due to its impedance matching. The electromagnetic properties of raw and SiO2-coated carbonyl iron particles were characterized in X band before and after heat treatment at 250 °C for 10 h. It was established that SiO2-coated carbonyl iron demonstrate good thermal stability, indicating SiO2-coating is useful in the usage of microwave absorbers operating at temperature up to 250 °C.

  15. Preparation and Characterization of SiO2/SiCN Core-shell Ceramic Microspheres

    Directory of Open Access Journals (Sweden)

    ZHANG Hai-yuan

    2017-05-01

    Full Text Available The SiO2/PSN core-shell microspheres were prepared via an emulsion reaction combined with the polymer-derived ceramics (PDCs method using polysilazane (PSN in situ polymerization on the surface of SiO2 modified by silane coupling agents MPS, followed by pyrolysis process to obtain SiO2/SiCN core-shell ceramic microspheres. The effects of raw mass ratio, curing time and pyrolysis temperature on the formation and the morphology of core-shell microspheres were studied. The morphology, chemical composition and phase transformation were characterized by SEM, EDS, TEM, FT-IR and XRD. The results show that after reaction for 4h at 200℃, SiO2 completely coated PSN forms a core-shell microsphere with rough surface when the mass ratio of SiO2 and PSN is 1:4; when pyrolysis temperature is at 800-1200℃, amorphous SiO2/SiCN core-shell ceramic microspheres are prepared; at 1400℃, the amorphous phase partially crystallizes to produce SiO2, SiC and Si3N4 phase.

  16. Effect of SiO2 addition and gamma irradiation on the lithium borate glasses

    Science.gov (United States)

    Raut, A. P.; Deshpande, V. K.

    2018-01-01

    The physical properties like density, glass transition temperature (Tg), and ionic conductivity of lithium borate (LB) glasses with SiO2 addition were measured before and after gamma irradiation. Remarkable changes in properties have been obtained in the physical properties of LB glasses with SiO2 addition and after gamma irradiation. The increase in density and glass transition temperature of LB glasses with SiO2 addition has been explained with the help of increase in density of cross linking due to SiO4 tetrahedra formation. The increase in ionic conductivity with SiO2 addition was explained with the help of ‘mixed glass former effect’. The increase in density and Tg of LB glasses with SiO2 addition after gamma irradiation has been attributed to fragmentation of bigger ring structure into smaller rings, which increases the density of cross linking and hence compaction. The exposure of gamma irradiation has lead to decrease in ionic conductivity of LB glasses with SiO2 addition. The atomic displacement caused by gamma irradiation resulted in filling of interstices and decrease in trapping sites. This explains the obtained decrease in ionic conductivity after gamma irradiation of glasses. The obtained results of effect of SiO2 addition and gamma irradiation on the density, Tg and ionic conductivity has been supported by FTIR results.

  17. Stability analysis of SiO2/SiC multilayer coatings

    International Nuclear Information System (INIS)

    Fu Zhiqiang; Jean-Charles, R.

    2006-01-01

    The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

  18. Superheating and supercooling of Ge nanocrystals embedded in SiO2

    International Nuclear Information System (INIS)

    Xu, Q; Sharp, I D; Yuan, C W; Yi, D O; Liao, C Y; Glaeser, A M; Minor, A M; Beeman, J W; Ridgway, M C; Kluth, P; Iii, J W Ager; Chrzan, D C; Haller, E E

    2007-01-01

    Free-standing nanocrystals exhibit a size-dependant thermodynamic melting point reduction relative to the bulk melting point that is governed by the surface free energy. The presence of an encapsulating matrix, however, alters the interface free energy of nanocrystals and their thermodynamic melting point can either increase or decrease relative to bulk. Furthermore, kinetic contributions can significantly alter the melting behaviours of embedded nanoscale materials. To study the effect of an encapsulating matrix on the melting behaviour of nanocrystals, we performed in situ electron diffraction measurements on Ge nanocrystals embedded in a silicon dioxide matrix. Ge nanocrystals were formed by multi-energy ion implantation into a 500 nm thick silica thin film on a silicon substrate followed by thermal annealing at 900 deg. C for 1 h. We present results demonstrating that Ge nanocrystals embedded in SiO 2 exhibit a 470 K melting/solidification hysteresis that is approximately symmetric about the bulk melting point. This unique behaviour, which is thought to be impossible for bulk materials, is well described using a classical thermodynamic model that predicts both kinetic supercooling and kinetic superheating. The presence of the silica matrix suppresses surface pre-melting of nanocrystals. Therefore, heterogeneous nucleation of both the liquid phase and the solid phase are required during the heating and cooling cycle. The magnitude of melting hysteresis is governed primarily by the value of the liquid Ge/solid Ge interface free energy, whereas the relative values of the solid Ge/matrix and liquid Ge/matrix interface free energies govern the position of the hysteresis loop in absolute temperature

  19. Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered GeSiO Ternary Precursor

    Directory of Open Access Journals (Sweden)

    Bo Zhang

    2014-01-01

    Full Text Available Ge nanocrystals (Ge-ncs embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of Ge-O species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

  20. Cytotoxicity and effect on GJIC of SiO2 nanoparticles in HL-7702 cells

    International Nuclear Information System (INIS)

    Pan Tao; Jin Minghua; Liu Xiaomei; Du Zhongjun; Zhou Xianqing; Huang Peili; Sun Zhiwei

    2013-01-01

    Objective: To study the cytotoxicity and effect on gap junction intracellular communication (GJIC) of SiO 2 nanoparticles in HL-7702 cells, and to provide experimental basis for toxicity assessment and the security applications of SiO 2 nanoparticles. Methods: Transmission electron microscope (TEM) was used to characterize two kinds of SiO 2 nanoparticles, verifying their size, dispersion and shape; dynamic light scattering (DLS) method was used to analyze the water dispersion and culture medium dispersion of the SiO 2 nanoparticles; MTT assay was carried out to examine the cytotoxicities of the two sizes SiO 2 nanoparticles on the cells; lactate dehydrogenase (LDH) release assay was performed to examine the integrity nano of the cell membrane; Scrape-loading and dye transfer assay was performed to examine the effect of SiO 2 nanoparticles on GJIC. Results: Based on the result of TEM, two kinds of SiO 2 nanoparticles were spherically shaped, uniformly sized and sporadically dispersed; the statistical analysis results showed the diameters of the two nanoparticles were (447.60±20.78) nm and (67.42±5.69) nm, respectively, thus they could be categorized as submicron scale and nano scale. The DLS method results manifested that the hydration nanoparticle sizes of the two SiO 2 nanoparticles were (684.37±18.76) nm, (128.31±7.64) nm in high purity water and (697.02±19.57) nm, (133.74±8.97) nm in RPMI-1640 solution, all the two nanoparticles were well dispersed without aggregation. MTT assay indicated that 24 h after treatment of SiO 2 nanoparticles, the cell viabilities were affected by both the size and the dose of the SiO 2 nanoparticles; the higher the dose was, the less viability the cells exhibited. Moreover, the nano scale particles inflicted more damage to the cells. LDH release assay indicated that the SiO 2 particles could also damage the cell membrane in a dose-dependent and size-dependent way. Scrape-loading and dye transfer assay indicated that the nano scale particles could cause GJIC inhibition in a dose-dependent way; and when at the same dose, the nanoparticles could cause a more obvious inhibition of GJIC than the submicron particles. Conclusion: SiO 2 nanoparticles have cytotoxicity on HL-7702 cells, and would cause GJIC inhibition. (authors)

  1. Si nanocrystals embedded in SiO2: Optical studies in the vacuum ultraviolet range

    DEFF Research Database (Denmark)

    Pankratov, V.; Osinniy, Viktor; Kotlov, A.

    2011-01-01

    done. It is demonstrated that the experimentally determined blueshift of the photoluminescence excitation and absorption spectra is larger than the theoretical predictions. The influence of point defects in the SiO2 matrix on the optical and luminescence properties of the embedded Si nanocrystals...... is discussed. Moreover, it is demonstrated that no energy transfer takes place between the SiO2 and Si nanocrystals when the excitation energy is higher than the band-to-band transition energy in SiO2....

  2. Effects of annealing on the properties of atomic layer deposited Ru thin films deposited by NH{sub 3} and H{sub 2} as reactants

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung-Joon; Kim, Soo-Hyun, E-mail: soohyun@ynu.ac.kr

    2016-08-01

    Atomic layer deposition (ALD) of Ru using a non-oxidizing reactant is indispensable considering its application as a seed layer for Cu electroplating and a bottom electrode for dynamic random access memory capacitors. In this study, ALD-Ru films were deposited using a sequential supply of dicarbonyl-bis(5-methyl-2,4-hexanediketonato) Ru(II) (C{sub 16}H{sub 22}O{sub 6}Ru) and potential non-oxidizing reducing agents, NH{sub 3} or H{sub 2}, as the reactants at a substrate temperature of 250 °C, and the effects of post-annealing in a H{sub 2} ambient on the film properties were investigated. The highly conformal deposition of Ru films was possible using the present reaction scheme but its resistivity was as high as ~ 750 μΩ-cm due to carbon incorporation into the film and the formation of an amorphous structure. Low temperature annealing at 300 °C at H{sub 2} ambient after deposition was found to improve the properties significantly in terms of the resistivity, impurities contents and crystallinity. For example, the film resistivity was decreased drastically to ~ 40 μΩ-cm with both the release of C in the film and crystallization after annealing based on secondary ion mass spectrometry and transmission electron microscopy, whereas perfect step coverage at a very small-sized dual trench (aspect ratio: ~ 3, the top opening size of 45 nm and bottom size of 20 nm) was maintained after annealing. - Highlights: • Ru thin films were deposited by atomic layer deposition (ALD) using NH{sub 3} and H{sub 2} molecules. • Effects of low temperature (300 °C) post-annealing on the film properties were investigated. • Post annealing improved the properties of ALD-Ru films. • Perfect step coverage of ALD-Ru was confirmed at trench structure (top opening width: 45 nm).

  3. The Reduced Recombination and the Enhanced Lifetime of Excited Electron in QDSSCs Based on Different ZnS and SiO2 Passivation

    Directory of Open Access Journals (Sweden)

    Ha Thanh Tung

    2018-01-01

    Full Text Available In this study, we focus on the enhanced absorption and reduced recombination of quantum dot solar cells based on photoanodes which were coated by different ZnS or SiO2 passivations using the successive ionic layer absorption and reaction methods. The quantum dot solar cells based on photoanode multilayers, which were coated with a ZnS or SiO2 passivation, increased dramatic absorption in the visible light region as compared with other photoanodes and reduced rapid recombination proccesses in photovoltaic. As a result, the performance efficiency of TiO2/CdS/CdSe photoanode with SiO2 passivation increased by 150% and 375% compared with TiO2/CdS/CdSe with ZnS passivation and TiO2/CdSe photoanode, respectively. For this reason, we note that the tandem multilayers can absorb more wavelengths in the visible light region to increase a large amount of excited electrons, which are transferred into the TiO2 conduction band, and decrease number of electrons returned to the polysulfide electrolyte from QDs when a ZnS or SiO2 passivation is consumed. Moreover, it is obvious that there was a far shift towards long waves in UV-Vis spectra and a sharp drop of intensity in photoluminescence spectra. In addition, the dynamic process in solar cells was carried out by electrochemical impedance spectra.

  4. Formation, structure, and phonon confinement effect of nanocrystalline Si1-xGex in SiO2-Si-Ge cosputtered films

    International Nuclear Information System (INIS)

    Yang, Y.M.; Wu, X.L.; Siu, G.G.; Huang, G.S.; Shen, J.C.; Hu, D.S.

    2004-01-01

    Using magnetron cosputtering of SiO 2 , Ge, and Si targets, Si-based SiO 2 :Ge:Si films were fabricated for exploring the influence of Si target proportion (P Si ) and annealing temperature (Ta) on formation, local structure, and phonon properties of nanocrystalline Si 1-x Ge x (nc-Si 1-x Ge x ). At low P Si and Ta higher than 800 deg. C, no nc-Si 1-x Ge x but a kind of composite nanocrystal consisting of a Ge core, GeSi shell, and amorphous Si outer shell is formed in the SiO 2 matrix. At moderate P Si , nc-Si 1-x Ge x begins to be formed at Ta=800 deg. C and coexists with nc-Ge at Ta=1100 deg. C. At high P Si , it was disclosed that both optical phonon frequency and lattice spacing of nc-Si 1-x Ge x increase with raising Ta. The possible origin of this phenomenon is discussed by considering three factors, the phonon confinement, strain effect, and composition variation of nc-Si 1-x Ge x . This work will be helpful in understanding the growth process of ternary GeSiO films and beneficial to further investigations on optical properties of nc-Ge 1-x Si x in the ternary matrix

  5. Change in crystalline structure and band alignment in atomic-layer-deposited HfO{sub 2} on InPusing an annealing treatment

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Yu-Seon; Kim, Dae-Kyoung; Cho, Mann-Ho [Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Seo, Jung-Hye [Division of Materials Science, Korea Basic Science Institute, Daejeon 305-333 (Korea, Republic of); Shon, Hyun Kyong; Lee, Tae Geol [Korea Research Institute of Standards and Science, Daejeon 305-540 (Korea, Republic of); Cho, Young Dae; Kim, Sun-Wook; Ko, Dae-Hong [Department of Material Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, Hyoungsub [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2013-08-15

    Changes in structural characteristics and band alignments of atomic-layer-deposited HfO{sub 2} films on InP (001) as a function of annealing temperature and film thickness were investigated using various analytical techniques. After an annealing at temperatures over 500 C, the HfO{sub 2} films were converted into a fully crystalline structure with a tetragonal phase with no detectable interfacial layer between the film and the InP substrate. In-P-O states, produced by interfacial reactions, were increased during the post deposition annealing (PDA) process and oxides were detected in the surface region of the HfO{sub 2} film, indicating that In and P atoms had out-diffused. The E{sub g} value of the as-grown HfO{sub 2} film was found to be 5.80 {+-} 0.1 eV. After the PDA treatment, the optical band gap and valence band offset values were significantly affected by the interfacial oxide states between the HfO{sub 2} film and InP substrate. Moreover, band bending in InP, due to negative space charges generated by an unstable P-rich interfacial state during atomic layer deposition process was decreased after the annealing treatment. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Effects of the annealing duration of the ZnO buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process

    Energy Technology Data Exchange (ETDEWEB)

    Shin, C.M.; Lee, J.Y.; Heo, J.H.; Park, J.H.; Kim, C.R. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-07-30

    In this study, the effects of the annealing duration of a zinc oxide (ZnO) buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process are discussed. A ZnO buffer layer was deposited on p-type Si (1 1 1) substrates by the metal organic chemical vapor deposition (MOCVD) method. After that, ZnO rods were grown on the ZnO-buffer/Si (1 1 1) substrate by a hydrothermal process. In order to determine the optimum annealing duration of the buffer layer for the growth of ZnO rods, durations ranging from 0.5 to 30 min were tried. The morphology and crystal structure of the ZnO/ZnO-buffer/Si (1 1 1) were measured by field emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). The optical properties were investigated by photoluminescence (PL) measurement.

  7. Facile synthesis of microporous SiO2/triangular Ag composite nanostructures for photocatalysis

    Science.gov (United States)

    Sirohi, Sidhharth; Singh, Anandpreet; Dagar, Chakit; Saini, Gajender; Pani, Balaram; Nain, Ratyakshi

    2017-11-01

    In this article, we present a novel fabrication of microporous SiO2/triangular Ag nanoparticles for dye (methylene blue) adsorption and plasmon-mediated degradation. Microporous SiO2 nanoparticles with pore size aminopropyl) trimethoxysilane) to introduce amine groups. Amine-functionalized microporous silica was used for adsorption of triangular silver (Ag) nanoparticles. The synthesized microporous SiO2 nanostructures were investigated for adsorption of different dyes including methylene blue, congo red, direct green 26 and curcumin crystalline. Amine-functionalized microporous SiO2/triangular Ag nanostructures were used for plasmon-mediated photocatalysis of methylene blue. The experimental results revealed that the large surface area of microporous silica facilitated adsorption of dye. Triangular Ag nanoparticles, due to their better charge carrier generation and enhanced surface plasmon resonance, further enhanced the photocatalysis performance.

  8. Efficient photocatalytic activity with carbon-doped SiO2 nanoparticles

    KAUST Repository

    Zhang, Dongen; Wu, Jinbo; Zhou, Bingpu; Hong, Yaying; Li, Shunbo; Wen, Weijia

    2013-01-01

    by thermogravimetric analysis, X-ray diffraction, standard and high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The C-doped SiO2 displayed outstanding photocatalytic properties, as evidenced by its catalysis of Rhodamine B

  9. PECVD SiO2 dielectric for niobium Josephson IC process

    International Nuclear Information System (INIS)

    Lee, S.Y.; Nandakumar, V.; Murdock, B.; Hebert, D.

    1991-01-01

    PECVD SiO 2 dielectric has been evaluated as an insulator for a Nb-based, all-refractory Josephson integrated circuit process. First, the properties of PECVD SiO 2 films were measured and compared with those of evaporated SiO films. Second, the PECVD SiO 2 dielectric film was used in our Nb-based Josephson integrated circuit process. The main problem was found to be the deterioration of the critical temperature of the superconducting niobium adjacent to the SiO 2 . The cause and a solution of the problem were investigated. Finally, a Josephson integrated sampler circuit was fabricated and tested. This paper shows acceptable junction I-V characteristics and a measured time resolution of a 4.9 ps pulse in liquid helium

  10. Synthesis of unidirectional structures of SiO2-Ag using Au nanoparticles as nucleation centers

    International Nuclear Information System (INIS)

    Villa S, G.; Mendoza A, D.; Gutierrez W, C.; Perez H, R.

    2008-01-01

    This paper reports a method to synthesize Ag unidirectional structures covered with SiO 2 by sol-gel technique using Au nanoparticles as nucleation centers of the unidirectional structures. In the first phase unidirectional structures of SiO 2 -Ag CI are obtained by sol-gel, using TEOS as a precursor of metallic structures (Ag) and the incorporation of Au nanoparticles as nucleation centers for growth of unidirectional structures. In the second stage, one-way systems are subjected to thermal treatment in H 2 atmosphere for obtain AG 0 particles through mechanisms that diffusion and coalescence of silver to form structures that have a thin cover of SiO 2 . Analysis by scanning electron microscopy, transmission and atomic force microscopy allowed to determine the chemical composition and microstructural properties of unidirectional systems SiO 2 -Ag. (Author)

  11. Experimental determination of nanofluid specific heat with SiO2 nanoparticles in different base fluids

    Science.gov (United States)

    Akilu, S.; Baheta, A. T.; Sharma, K. V.; Said, M. A.

    2017-09-01

    Nanostructured ceramic materials have recently attracted attention as promising heat transfer fluid additives owing to their outstanding heat storage capacities. In this paper, experimental measurements of the specific heats of SiO2-Glycerol, SiO2-Ethylene Glycol, and SiO2-Glycerol/Ethylene Glycol mixture 60:40 ratio (by mass) nanofluids with different volume concentrations of 1.0-4.0% have been carried out using differential scanning calorimeter at temperatures of 25 °C and 50 °C. Experimental results indicate lower specific heat capacities are found with SiO2 nanofluids compared to their respective base fluids. The specific heat was decreasing with the increase of concentration, and this decrement depends on upon the type of the base fluid. It is observed that temperature has a positive impact on the specific heat capacity. Furthermore, the experimental values were compared with the theoretical model predictions, and a satisfactory agreement was established.

  12. Porous asymmetric SiO2-g-PMMA nanoparticles produced by phase inversion

    KAUST Repository

    Munirasu, Selvaraj; Nunes, Suzana Pereira

    2014-01-01

    of functionalized nanoparticles in different solvents and immersion in water. The resulting asymmetrically porous morphology and nanoparticle assembly was characterized by scanning electron and atomic force microscopy. The PMMA functionalized SiO2 hybrid material

  13. Analysis of SiO2 nanoparticles binding proteins in rat blood and brain homogenate

    Directory of Open Access Journals (Sweden)

    Shim KH

    2014-12-01

    Full Text Available Kyu Hwan Shim,1 John Hulme,1 Eun Ho Maeng,2 Meyoung-Kon Kim,3 Seong Soo A An1 1Department of Bionano Technology, Gachon Medical Research Institute, Gachon University, Sungnam-si, 2Department of Analysis, KTR, Kimpo, Gyeonggi-do, 3Department of Biochemistry and Molecular Biology, Korea University Medical School and College, Seoul, South Korea Abstract: A multitude of nanoparticles, such as titanium oxide (TiO2, zinc oxide, aluminum oxide, gold oxide, silver oxide, iron oxide, and silica oxide, are found in many chemical, cosmetic, pharmaceutical, and electronic products. Recently, SiO2 nanoparticles were shown to have an inert toxicity profile and no association with an irreversible toxicological change in animal models. Hence, exposure to SiO2 nanoparticles is on the increase. SiO2 nanoparticles are routinely used in numerous materials, from strengthening filler for concrete and other construction composites, to nontoxic platforms for biomedical application, such as drug delivery and theragnostics. On the other hand, recent in vitro experiments indicated that SiO2 nanoparticles were cytotoxic. Therefore, we investigated these nanoparticles to identify potentially toxic pathways by analyzing the adsorbed protein corona on the surface of SiO2 nanoparticles in the blood and brain of the rat. Four types of SiO2 nanoparticles were chosen for investigation, and the protein corona of each type was analyzed using liquid chromatography-tandem mass spectrometry technology. In total, 115 and 48 plasma proteins from the rat were identified as being bound to negatively charged 20 nm and 100 nm SiO2 nanoparticles, respectively, and 50 and 36 proteins were found for 20 nm and 100 nm arginine-coated SiO2 nanoparticles, respectively. Higher numbers of proteins were adsorbed onto the 20 nm sized SiO2 nanoparticles than onto the 100 nm sized nanoparticles regardless of charge. When proteins were compared between the two charges, higher numbers of proteins were found for arginine-coated positively charged SiO2 nanoparticles than for the negatively charged nanoparticles. The proteins identified as bound in the corona from SiO2 nanoparticles were further analyzed with ClueGO, a Cytoscape plugin used in protein ontology and for identifying biological interaction pathways. Proteins bound on the surface of nanoparticles may affect functional and conformational properties and distributions in complicated biological processes. Keywords: silica, nanoparticles, protein corona, plasma, brain homogenate, nanotoxicity

  14. The structural studies of aluminosilicate gels and thin films synthesized by the sol-gel method using different Al2O3 and SiO2 precursors

    Directory of Open Access Journals (Sweden)

    Adamczyk Anna

    2015-12-01

    Full Text Available Aluminosilicate materials were obtained by sol-gel method, using different Al2O3 and SiO2 precursors in order to prepare sols based on water and organic solvents. As SiO2 precursors, Aerosil 200TM and tetraethoxysilane TEOS: Si(OC2H54 were applied, while DisperalTM and aluminium secondary butoxide ATSB: Al(OC4H93 were used for Al2O3 ones. Bulk samples were obtained by heating gels at 500 °C, 850 °C and at 1150 °C in air, while thin films were synthesized on carbon, steel and alundum (representing porous ceramics substrates by the dip coating method. Thin films were annealed in air (steel and alundum and in argon (carbon at different temperatures, depending on the substrate type. The samples were synthesized as gels and coatings of the composition corresponding the that of 3Al2O3·2SiO2 mullite because of the specific valuable properties of this material. The structure of the annealed bulk samples and coatings was studied by FT-IR spectroscopy and XRD method (in standard and GID configurations. Additionally, the electron microscopy (SEM together with EDS microanalysis were applied to describe the morphology and the chemical composition of thin films. The analysis of FT-IR spectra and X-ray diffraction patterns of bulk samples revealed the presence of γ-Al2O3 and δ-Al2O3 phases, together with the small amount of SiO2 in the particulate samples. This observation was confirmed by the bands due to vibrations of Al–O bonds occurring in γ-Al2O3 and δ-Al2O3 structures, in the range of 400 to 900 cm−1. The same phases (γ-Al2O3 and δ-Al2O were observed in the deposited coatings, but the presence of particulate ones strongly depended on the type of Al2O3 and SiO2 precursor and on the heat treatment temperature. All thin films contained considerable amounts of amorphous phase.

  15. Development of nano SiO2 incorporated nano zinc phosphate coatings on mild steel

    International Nuclear Information System (INIS)

    Tamilselvi, M.; Kamaraj, P.; Arthanareeswari, M.; Devikala, S.; Selvi, J. Arockia

    2015-01-01

    Highlights: • Nano SiO 2 incorporated nano zinc phosphate coating on mild steel was developed. • Coatings showed enhanced corrosion resistance. • The nano SiO 2 is adsorbed on mild steel surface and become nucleation sites. • The nano SiO 2 accelerates the phosphating process. - Abstract: This paper reports the development of nano SiO 2 incorporated nano zinc phosphate coatings on mild steel at low temperature for achieving better corrosion protection. A new formulation of phosphating bath at low temperature with nano SiO 2 was attempted to explore the possibilities of development of nano zinc phosphate coatings on mild steel with improved corrosion resistance. The coatings developed were studied by Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDX), X-ray Diffraction (XRD), Transmission Electron Microscopy (TEM) and Electrochemical measurements. Significant variation in the coating weight, morphology and corrosion resistance was observed as nano SiO 2 concentrations varied from 0.5–4 g/L. The results showed that, the nano SiO 2 in the phosphating solution changed the initial potential of the interface between mild steel substrate and phosphating solution and reduce the activation energy of the phosphating process, increase the nucleation sites and yielded zinc phosphate coatings of higher coating weight, greater surface coverage and enhanced corrosion resistance. Better corrosion resistance was observed for coatings derived from phosphating bath containing 1.5 g/L nano SiO 2 . The new formulation reported in the present study was free from Ni or Mn salts and had very low concentration of sodium nitrite (0.4 g/L) as accelerator

  16. Nano-Ticl 4 .SiO 2 : a Versatile and Efficient Catalyst for Synthesis of ...

    African Journals Online (AJOL)

    Nano-TiCl4.SiO2 has been found to be an extremely efficient catalyst for the preparation of 3,4-dihydropyrimidinones/thiones via three-component reactions of an aldehyde, β-ketoester or β-diketone and urea or thiourea under mild conditions. Nano-TiCl4.SiO2 as a solid Lewis acid has been synthesized by reaction of ...

  17. Cathodic Potential Dependence of Electrochemical Reduction of SiO2 Granules in Molten CaCl2

    Science.gov (United States)

    Yang, Xiao; Yasuda, Kouji; Nohira, Toshiyuki; Hagiwara, Rika; Homma, Takayuki

    2016-09-01

    As part of an ongoing fundamental study to develop a new process for producing solar-grade silicon, this paper examines the effects of cathodic potential on reduction kinetics, current efficiency, morphology, and purity of Si product during electrolysis of SiO2 granules in molten CaCl2 at 1123 K (850 °C). SiO2 granules were electrolyzed potentiostatically at different cathodic potentials (0.6, 0.8, 1.0, and 1.2 V vs Ca2+/Ca). The reduction kinetics was evaluated based on the growth of the reduced Si layer and the current behavior during electrolysis. The results suggest that a more negative cathodic potential is favorable for faster reduction. Current efficiencies in 60 minutes are greater than 65 pct at all the potentials examined. Si wires with sub-micron diameters are formed, and their morphologies show little dependence on the cathodic potential. The impurities in the Si product can be controlled at low level. The rate-determining step for the electrochemical reduction of SiO2 granules in molten CaCl2 changes with time. At the initial stage of electrolysis, the electron transfer is the rate-determining step. At the later stage, the diffusion of O2- ions is the rate-determining step. The major cause of the decrease in reduction rate with increasing electrolysis time is the potential drop from the current collector to the reaction front due to the increased contact resistance among the reduced Si particles.

  18. Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition.

    Science.gov (United States)

    Wang, Xing; Liu, Hongxia; Zhao, Lu; Fei, Chenxi; Feng, Xingyao; Chen, Shupeng; Wang, Yongte

    2017-12-01

    La 2 O 3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La 2 O 3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La 2 O 3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La 2 O 3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La 2 O 3 . Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La 2 O 3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.

  19. SiO2@TiO2 Coating: Synthesis, Physical Characterization and Photocatalytic Evaluation

    Directory of Open Access Journals (Sweden)

    A. Rosales

    2018-03-01

    Full Text Available Use of silicon dioxide (SiO2 and titanium dioxide (TiO2 have been widely investigated individually in coatings technology, but their combined properties promote compatibility for different innovative applications. For example, the photocatalytic properties of TiO2 coatings, when exposed to UV light, have interesting environmental applications, such as air purification, self-cleaning and antibacterial properties. However, as reported in different pilot projects, serious durability problems, associated with the adhesion between the substrate and TiO2, have been evidenced. Thus, the aim of this work is to synthesize SiO2 together with TiO2 to increase the durability of the photocatalytic coating without affecting its photocatalytic potential. Therefore, synthesis using sonochemistry, synthesis without sonochemistry, physical characterization, photocatalytic evaluation, and durability of the SiO2, SiO2@TiO2 and TiO2 coatings are presented. Results indicate that using SiO2 improved the durability of the TiO2 coating without affecting its photocatalytic properties. Thus, this novel SiO2@TiO2 coating shows potential for developing long-lasting, self-cleaning and air-purifying construction materials.

  20. Positron annihilation in SiO 2-Si studied by a pulsed slow positron beam

    Science.gov (United States)

    Suzuki, R.; Ohdaira, T.; Uedono, A.; Kobayashi, Y.

    2002-06-01

    Positron and positronium (Ps) behavior in SiO 2-Si have been studied by means of positron annihilation lifetime spectroscopy (PALS) and age-momentum correlation (AMOC) spectroscopy with a pulsed slow positron beam. The PALS study of SiO 2-Si samples, which were prepared by a dry-oxygen thermal process, revealed that the positrons implanted in the Si substrate and diffused back to the interface do not contribute to the ortho-Ps long-lived component, and the lifetime spectrum of the interface has at least two components. From the AMOC study, the momentum distribution of the ortho-Ps pick-off annihilation in SiO 2, which shows broader momentum distribution than that of crystalline Si, was found to be almost the same as that of free positron annihilation in SiO 2. A varied interface model was proposed to interpret the results of the metal-oxide-semiconductor (MOS) experiments. The narrow momentum distribution found in the n-type MOS with a negative gate bias voltage could be attributed to Ps formation and rapid spin exchange in the SiO 2-Si interface. We have developed a two-dimensional positron lifetime technique, which measures annihilation time and pulse height of the scintillation gamma-ray detector for each event. Using this technique, the positronium behavior in a porous SiO 2 film, grown by a sputtering method, has been studied.

  1. Screen-Printed Photochromic Textiles through New Inks Based on SiO2@naphthopyran Nanoparticles.

    Science.gov (United States)

    Pinto, Tânia V; Costa, Paula; Sousa, Céu M; Sousa, Carlos A D; Pereira, Clara; Silva, Carla J S M; Pereira, Manuel Fernando R; Coelho, Paulo J; Freire, Cristina

    2016-10-26

    Photochromic silica nanoparticles (SiO 2 @NPT), fabricated through the covalent immobilization of silylated naphthopyrans (NPTs) based on 2H-naphtho[1,2-b]pyran (S1, S2) and 3H-naphtho[2,1-b]pyran (S3, S4) or through the direct adsorption of the parent naphthopyrans (1, 3) onto silica nanoparticles (SiO 2 NPs), were successfully incorporated onto cotton fabrics by a screen-printing process. Two aqueous acrylic- (AC-) and polyurethane- (PU-) based inks were used as dispersing media. All textiles exhibited reversible photochromism under UV and solar irradiation, developing fast responses and intense coloration. The fabrics coated with SiO 2 @S1 and SiO 2 @S2 showed rapid color changes and high contrasts (ΔE* ab = 39-52), despite presenting slower bleaching kinetics (2-3 h to fade to the original color), whereas the textiles coated with SiO 2 @S3 and SiO 2 @S4 exhibited excellent engagement between coloration and decoloration rates (coloration and fading times of 1 and 2 min, respectively; ΔE* ab = 27-53). The PU-based fabrics showed excellent results during the washing fastness tests, whereas the AC-based textiles evidenced good results only when a protective transfer film was applied over the printed design.

  2. Characterization of anodic SiO2 films on P-type 4H-SiC

    International Nuclear Information System (INIS)

    Woon, W.S.; Hutagalung, S.D.; Cheong, K.Y.

    2009-01-01

    The physical and electronic properties of 100-120-nm thick anodic silicon dioxide film grown on p-type 4H-SiC wafer and annealed at different temperatures (500, 600, 700, and 800 deg. C ) have been investigated and reported. Chemical bonding of the films has been analyzed by Fourier transform infra red spectroscopy. Smooth and defect-free film surface has been revealed under field emission scanning electron microscope. Atomic force microscope has been used to study topography and surface roughness of the films. Electronic properties of the film have been investigated by high frequency capacitance-voltage and current-voltage measurements. As the annealing temperature increased, refractive index, dielectric constant, film density, SiC surface roughness, effective oxide charge, and leakage current density have been reduced until 700 deg. C . An increment of these parameters has been observed after this temperature. However, a reversed trend has been demonstrated in porosity of the film and barrier height between conduction band edge of SiO 2 and SiC

  3. Contribution to the study of metal-oxide-semiconductor devices with optical access. In2O3-SiO2-Si structure

    International Nuclear Information System (INIS)

    Thenoz, Yves.

    1974-01-01

    A general study of the fabrication of the structure In 2 O 3 /SiO 2 /Si was made encompassing the problems posed during the realization of these structures. The sputtering study enabled the influence of the main parameters on layer properties to be determined. The decisive importance of clean conditions throughout fabrication (especially during sputtering) on the properties of In 2 O 3 layers and on those of the structure and its stability was revealed. However, the problem of ageing of the structure were not investigated. Finally, the construction of MOS capacitors and transistors showed that In 2 O 3 /SiO 2 /Si structures can be used in MOS circuits [fr

  4. [Effects of annealing temperature on the structure and optical properties of ZnMgO films prepared by atom layer deposition].

    Science.gov (United States)

    Sun, Dong-Xiao; Li, Jin-Hua; Fang, Xuan; Chen, Xin-Ying; Fang, Fang; Chu, Xue-Ying; Wei, Zhi-Peng; Wang, Xiao-Hua

    2014-07-01

    In the present paper, we report the research on the effects of annealing temperature on the crystal quality and optical properties of ZnMgO films deposited by atom layer deposition(ALD). ZnMgO films were prepared on quartz substrates by ALD and then some of the samples were treated in air ambient at different annealing temperature. The effects of annealing temperature on the crystal quality and optical properties of ZnMgO films were characterized by X-ray diffraction (XRD), photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption spectra. The XRD results showed that the crystal quality of ZnMgO films was significantly improved when the annealing temperature was 600 degrees C, meanwhile the intensity of(100) diffraction peak was the strongest. Combination of PL and UV-Vis absorption measurements showed that it can strongly promote the Mg content increasing in ZnMgO films and increase the band gap of films. So the results illustrate that suitable annealing temperature can effectively improve the crystal quality and optical properties of ZnMgO films.

  5. Optical properties of the Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings

    Science.gov (United States)

    Marszałek, Konstanty; Winkowski, Paweł; Jaglarz, Janusz

    2014-01-01

    Investigations of bilayer and trilayer Al2O3/SiO2 and Al2O3/HfO2/SiO2 antireflective coatings are presented in this paper. The oxide films were deposited on a heated quartz glass by e-gun evaporation in a vacuum of 5 × 10-3 [Pa] in the presence of oxygen. Depositions were performed at three different temperatures of the substrates: 100 °C, 200 °C and 300 °C. The coatings were deposited onto optical quartz glass (Corning HPFS). The thickness and deposition rate were controlled with Inficon XTC/2 thickness measuring system. Deposition rate was equal to 0.6 nm/s for Al2O3, 0.6 nm - 0.8 nm/s for HfO2 and 0.6 nm/s for SiO2. Simulations leading to optimization of the thin film thickness and the experimental results of optical measurements, which were carried out during and after the deposition process, have been presented. The optical thickness values, obtained from the measurements performed during the deposition process were as follows: 78 nm/78 nm for Al2O3/SiO2 and 78 nm/156 nm/78 nm for Al2O3/HfO2/SiO2. The results were then checked by ellipsometric technique. Reflectance of the films depended on the substrate temperature during the deposition process. Starting from 240 nm to the beginning of visible region, the average reflectance of the trilayer system was below 1 % and for the bilayer, minima of the reflectance were equal to 1.6 %, 1.15 % and 0.8 % for deposition temperatures of 100 °C, 200 °C and 300 °C, respectively.

  6. Preventing dewetting during rapid-thermal annealing of FePt films with enhanced L1{sub 0} ordering by introducing Ag cap-layers

    Energy Technology Data Exchange (ETDEWEB)

    Hsiao, S.N., E-mail: pmami.hsiao@gmail.com [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China); Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Wu, S.C. [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Liu, S.H. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China); Tsai, J.L., E-mail: tsaijl@dragon.nchu.edu.tw [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Chen, S.K. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China); Chang, Y.C. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lee, H.Y. [Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan (China)

    2015-11-15

    High-order FePt continuous films with a strong (001) texture were fabricated on a glass substrate by introducing Ag layers and rapid thermal annealing (RTA). The dewetting of the (001)-textured FePt was suppressed during RTA with high heating rates (>80 K/s). The Ag cap layers not only increased the in-plane tensile stress, but also improved the (001) anisotropy and L1{sub 0} ordering of the FePt layers. All continuous Ag/FePt bilayer films possessed strong perpendicular anisotropies and high-ordered states irrespective of the Ag layer thickness. - Highlights: • Dewetting of (001) FePt fims were suppressed by introducing Ag cap layers. • Ag layers enhanced in-plane tensile stress, (001) texture and L1{sub 0} ordering. • Irrespective of Ag thickness, the Ag/FePt films exhibited strong (001) texture.

  7. Preventing dewetting during rapid-thermal annealing of FePt films with enhanced L10 ordering by introducing Ag cap-layers

    International Nuclear Information System (INIS)

    Hsiao, S.N.; Wu, S.C.; Liu, S.H.; Tsai, J.L.; Chen, S.K.; Chang, Y.C.; Lee, H.Y.

    2015-01-01

    High-order FePt continuous films with a strong (001) texture were fabricated on a glass substrate by introducing Ag layers and rapid thermal annealing (RTA). The dewetting of the (001)-textured FePt was suppressed during RTA with high heating rates (>80 K/s). The Ag cap layers not only increased the in-plane tensile stress, but also improved the (001) anisotropy and L1 0 ordering of the FePt layers. All continuous Ag/FePt bilayer films possessed strong perpendicular anisotropies and high-ordered states irrespective of the Ag layer thickness. - Highlights: • Dewetting of (001) FePt fims were suppressed by introducing Ag cap layers. • Ag layers enhanced in-plane tensile stress, (001) texture and L1 0 ordering. • Irrespective of Ag thickness, the Ag/FePt films exhibited strong (001) texture

  8. Photocatalytic hydrogen production using visible-light-responsive Ta 3N5 photocatalyst supported on monodisperse spherical SiO2 particulates

    KAUST Repository

    Liu, Xiaoming

    2014-01-01

    Fine nanoparticles of Ta3N5 (10-20 nm) were synthesized on the surfaces of SiO2 spheres with a diameter of ∼550 nm. A sol-gel method was used to modify the surface of SiO2 with Ta2O5 from TaCl5 dissolved in ethanol in the presence of citric acid and polyethylene glycol. The resulting oxide composites were treated in an NH3 flow at 1123 K to form core-shell structured Ta3N5/SiO2 sub-microspheres. The obtained samples were characterized using powder X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectra (EDX), transmission electron microscopy (TEM), and photocatalytic activity measurements for H 2 evolution from an aqueous methanol solution. The XRD results demonstrate the expected sequential formation of Ta2O5 layers, followed by Ta3N5 after nitridation on the Ta 2O5/SiO2 composite. SEM and TEM observations indicate that the obtained Ta3N5/SiO2 sub-microspheres have a uniform size distribution with high crystallinity and an obvious core-shell structure. The presence of support maintained the intrinsic photocatalytic activity of Ta3N5 nanoparticles, but it did drastically improve the dispersion of the photocatalysts in the solution. This study proposes the use of an inert support in photocatalytic reactors to improve ease of handling the powder photocatalyst for gas-phase photocatalysis and the suspension of the solution, controlling nature of light harvesting and degree of scattering of the photoreactor. © 2013 Elsevier Ltd. All rights reserved.

  9. Preparation of Microkernel-Based Mesoporous (SiO2-CdTe-SiO2)@SiO2 Fluorescent Nanoparticles for Imaging Screening and Enrichment of Heat Shock Protein 90 Inhibitors from Tripterygium Wilfordii.

    Science.gov (United States)

    Hu, Yue; Miao, Zhao-Yi; Zhang, Xiao-Jing; Yang, Xiao-Tong; Tang, Ying-Ying; Yu, Sheng; Shan, Chen-Xiao; Wen, Hong-Mei; Zhu, Dong

    2018-05-01

    The currently utilized ligand fishing for bioactive molecular screening from complex matrixes cannot perform imaging screening. Here, we developed a new solid-phase ligand fishing coupled with an in situ imaging protocol for the specific enrichment and identification of heat shock protein 90 (Hsp 90) inhibitors from Tripterygium wilfordii, utilizing a multiple-layer and microkernel-based mesoporous nanostructure composed of a protective silica coating CdTe quantum dot (QD) core and a mesoporous silica shell, i.e., microkernel-based mesoporous (SiO 2 -CdTe-SiO 2 )@SiO 2 fluorescent nanoparticles (MMFNPs) as extracting carries and fluorescent probes. The prepared MMFNPs showed a highly uniform spherical morphology, retention of fluorescence emission, and great chemical stability. The fished ligands by Hsp 90α-MMFNPs were evaluated via the preliminary bioactivity based on real-time cellular morphology imaging by confocal laser scanning microscopy (CLSM) and then identified by mass spectrometry (MS). Celastrol was successfully isolated as an Hsp 90 inhibitor, and two other specific components screened by Hsp 90α-MMFNPs, i.e., demecolcine and wilforine, were preliminarily identified as potential Hsp 90 inhibitors through the verification of strong affinity to Hsp 90 and antitumor bioactivity. The approach based on the MMFNPs provides a strong platform for imaging screening and discovery of plant-derived biologically active molecules with high efficiency and selectivity.

  10. Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Narendra [Materials Science Programme, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Samtel Centre for Display Technologies, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Kumar, Jitendra [Materials Science Programme, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Panda, Siddhartha, E-mail: spanda@iitk.ac.in [Materials Science Programme, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Samtel Centre for Display Technologies, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Department of Chemical Engineering, Indian Institute of Technology Kanpur, Kanpur-208016 (India)

    2015-06-15

    The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO{sub 2}/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS) structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 {sup o}C in N{sub 2} ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 {sup o}C. The increased pH sensitivity with the film annealed at 400 {sup o}C in N{sub 2} gas was attributed to the enhanced lattice oxygen ions (based on the XPS data) and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 {sup o}C was attributed to defects in the films as well as the induced traps at the IGZO/SiO{sub 2} interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here) used as the active layer in a thin film transistors (TFTs) possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.

  11. Physical characterization of Cu{sub 2}ZnGeSe{sub 4} thin films from annealing of Cu-Zn-Ge precursor layers

    Energy Technology Data Exchange (ETDEWEB)

    Buffière, M., E-mail: buffiere@imec.be [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium); ElAnzeery, H. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Microelectronics System Design department, Nile University, Cairo (Egypt); Oueslati, S.; Ben Messaoud, K. [Imec—Partner in Solliance, Leuven (Belgium); KACST-Intel Consortium Center of Excellence in Nano-manufacturing Applications (CENA), Riyadh (Saudi Arabia); Department of Physics, Faculty of Sciences of Tunis, El Manar (Tunisia); Brammertz, G.; Meuris, M. [Imec Division IMOMEC — Partner in Solliance, Diepenbeek (Belgium); Institute for Material Research (IMO) Hasselt University, Diepenbeek (Belgium); Poortmans, J. [Imec—Partner in Solliance, Leuven (Belgium); Department of Electrical Engineering (ESAT), KU Leuven, Heverlee (Belgium)

    2015-05-01

    Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) can be considered as a potential alternative for wide band gap thin film devices. In this work, CZGeSe thin films were deposited on Mo-coated soda lime glass substrates by sequential deposition of sputtered Cu, Zn and e-beam evaporated Ge layers from elemental targets followed by annealing at high temperature using H{sub 2}Se gas. We report on the effect of the precursor stack order and composition and the impact of the annealing temperature on the physical properties of CZGeSe thin films. The optimal layer morphology was obtained when using a Mo/Cu/Zn/Ge precursor stack annealed at 460 °C. We have observed that the formation of secondary phases such as ZnSe can be prevented by tuning the initial composition of the stack, the stack order and the annealing conditions. This synthesis process allows synthesizing CZGeSe absorber with an optical band gap of 1.5 eV. - Highlights: • Cu{sub 2}ZnGeSe{sub 4} (CZGeSe) thin films were deposited using a two-step process. • CZGeSe dense layers were obtained using a Mo/Cu/Zn/Ge precursor annealed at 460 °C. • Formation of ZnSe can be avoided by tuning the composition and order of the initial stack. • P-type CZGeSe absorber with an optical band gap of 1.5 eV was obtained.

  12. Wet thermal annealing effect on TaN/HfO2/Ge metal—oxide—semiconductor capacitors with and without a GeO2 passivation layer

    International Nuclear Information System (INIS)

    Liu Guan-Zhou; Li Cheng; Lu Chang-Bao; Tang Rui-Fan; Tang Meng-Rao; Wu Zheng; Yang Xu; Huang Wei; Lai Hong-Kai; Chen Song-Yan

    2012-01-01

    Wet thermal annealing effects on the properties of TaN/HfO 2 /Ge metal—oxide—semiconductor (MOS) structures with and without a GeO 2 passivation layer are investigated. The physical and the electrical properties are characterized by X-ray photoemission spectroscopy, high-resolution transmission electron microscopy, capacitance—voltage (C—V) and current—voltage characteristics. It is demonstrated that wet thermal annealing at relatively higher temperature such as 550 °C can lead to Ge incorporation in HfO 2 and the partial crystallization of HfO 2 , which should be responsible for the serious degradation of the electrical characteristics of the TaN/HfO 2 /Ge MOS capacitors. However, wet thermal annealing at 400 °C can decrease the GeO x interlayer thickness at the HfO 2 /Ge interface, resulting in a significant reduction of the interface states and a smaller effective oxide thickness, along with the introduction of a positive charge in the dielectrics due to the hydrolyzable property of GeO x in the wet ambient. The pre-growth of a thin GeO 2 passivation layer can effectively suppress the interface states and improve the C—V characteristics for the as-prepared HfO 2 gated Ge MOS capacitors, but it also dissembles the benefits of wet thermal annealing to a certain extent

  13. Fabrication of highly oriented D03-Fe3Si nanocrystals by solid-state dewetting of Si ultrathin layer

    International Nuclear Information System (INIS)

    Naito, Muneyuki; Nakagawa, Tatsuhiko; Machida, Nobuya; Shigematsu, Toshihiko; Nakao, Motoi; Sudoh, Koichi

    2013-01-01

    In this paper, highly oriented nanocrystals of Fe 3 Si with a D0 3 structure are fabricated on SiO 2 using ultrathin Si on insulator substrate. First, (001) oriented Si nanocrystals are formed on the SiO 2 layer by solid state dewetting of the top Si layer. Then, Fe addition to the Si nanocrystals is performed by reactive deposition epitaxy and post-deposition annealing at 500 °C. The structures of the Fe–Si nanocrystals are analyzed by cross-sectional transmission electron microscopy and nanobeam electron diffraction. We observe that Fe 3 Si nanocrystals with D0 3 , B2, and A2 structures coexist on the 1-h post-annealed samples. Prolonged annealing at 500 °C is effective in obtaining Fe 3 Si nanocrystals with a D0 3 single phase, thereby promoting structural ordering in the nanocrystals. We discuss the formation process of the highly oriented D0 3 -Fe 3 Si nanocrystals on the basis of the atomistic structural information. - Highlights: • Highly oriented Fe–Si nanocrystals (NCs) are fabricated by reactive deposition. • Si NCs formed by solid state dewetting of Si thin layers are used as seed crystals. • The structures of Fe–Si NCs are analyzed by nanobeam electron diffraction. • Most of Fe–Si NCs possess the D0 3 structure after post-deposition annealing

  14. Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

    International Nuclear Information System (INIS)

    Stepina, N.P.; Dvurechenskii, A.V.; Armbrister, V.A.; Kirienko, V.V.; Novikov, P.L.; Kesler, V.G.; Gutakovskii, A.K.; Smagina, Z.V.; Spesivtzev, E.V.

    2008-01-01

    A floating gate memory structure, utilizing Ge nanocrystals (NCs) deposited on tunnel SiO 2 , have been fabricated using pulsed low energy ion-beam induced molecular-beam deposition (MBD) in ultra-high vacuum. The ion-beam action is shown to stimulate the nucleation of Ge NCs when being applied after thin Ge layer deposition. Growth conditions for independent change of NCs size and array density were established allowing to optimize the structure parameters required for memory device. Activation energy E = 0.25 eV was determined from the temperature dependence of NCs array density. Monte Carlo simulation has shown that the process, determining NCs array density, is the surface diffusion. Embedding of the crystalline Ge dots into silicon oxide was carried out by selective oxidation of Si(100)/SiO 2 /Ge(NCs)/poly-Si structure. MOS-capacitor obtained after oxidation showed a hysteresis in its C-V curves attributed to charge retention in the Ge dots

  15. Simultaneous ultra-long data retention and low power based on Ge10Sb90/SiO2 multilayer thin films

    Science.gov (United States)

    You, Haipeng; Hu, Yifeng; Zhu, Xiaoqin; Zou, Hua; Song, Sannian; Song, Zhitang

    2018-02-01

    In this article, Ge10Sb90/SiO2 multilayer thin films were prepared to improve thermal stability and data retention for phase change memory. Compared with Ge10Sb90 monolayer thin film, Ge10Sb90 (1 nm)/SiO2 (9 nm) multilayer thin film had higher crystallization temperature and resistance contrast between amorphous and crystalline states. Annealed Ge10Sb90 (1 nm)/SiO2 (9 nm) had uniform grain with the size of 15.71 nm. After annealing, the root-mean-square surface roughness for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film increased slightly from 0.45 to 0.53 nm. The amorphization time for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film (2.29 ns) is shorter than Ge2Sb2Te5 (3.56 ns). The threshold voltage of a cell based on Ge10Sb90 (1 nm)/SiO2 (9 nm) (3.57 V) was smaller than GST (4.18 V). The results indicated that Ge10Sb90/SiO2 was a promising phase change thin film with high thermal ability and low power consumption for phase change memory application.

  16. Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Wu, Cheng-Yang; Hong, Shao-Chyang; Hwang, Fu-Tsai; Lai, Li-Wen; Lin, Tan-Wei; Liu, Day-Shan

    2011-01-01

    The effect of a nickel oxide (NiO x ) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO x ) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO x films, with and without a NiO x seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO x film, deposited on a NiO x seed layer, was found to be lower than that of a pure TiO x film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO x film deposited onto the NiO x seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO x /TiO x system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

  17. Effect of nickel oxide seed layers on annealed-amorphous titanium oxide thin films prepared using plasma-enhanced chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Cheng-Yang; Hong, Shao-Chyang [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Hwang, Fu-Tsai [Department of Electro-Optical Engineering, National United University, Miao-Li, 36003, Taiwan (China); Lai, Li-Wen [ITRI South, Industrial Technology Research Institute, Liujia, Tainan, 73445, Taiwan (China); Lin, Tan-Wei [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China); Liu, Day-Shan, E-mail: dsliu@sunws.nfu.edu.tw [Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin, 63201, Taiwan (China)

    2011-10-31

    The effect of a nickel oxide (NiO{sub x}) seed layer on the crystallization and photocatalytic activity of the sequentially plasma-enhanced chemical vapor deposited amorphous titanium oxide (TiO{sub x}) thin film processed by a post-annealing process was investigated. The evolution of the crystalline structures, chemical bond configurations, and surface/cross-sectional morphologies of the annealed TiO{sub x} films, with and without a NiO{sub x} seed layer, was examined using X-ray diffractometer, Fourier transform infrared spectrometry, X-ray photoelectron spectroscopy, atomic force microscopy, and field emission scanning electron microscope measurements. Thermo- and photo-induced hydrophilicity was determined by measuring the contact angle of water droplet. Photocatalytic activity after UV light irradiation was evaluated from the decolorization of a methylene blue solution. The crystallization temperature of the TiO{sub x} film, deposited on a NiO{sub x} seed layer, was found to be lower than that of a pure TiO{sub x} film, further improving the thermo- and photo-induced surface super-hydrophilicity. The TiO{sub x} film deposited onto the NiO{sub x} seed layer, resulting in significant cluster boundaries, showed a rough surface morphology and proved to alleviate the anatase crystal growth by increasing the post-annealing temperature, which yielded a more active surface area and prohibited the recombination of photogenerated electrons and holes. The photocatalytic activity of the NiO{sub x}/TiO{sub x} system with such a textured surface therefore was enhanced and optimized through an adequate post-annealing process.

  18. Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

    DEFF Research Database (Denmark)

    Sadowski, Janusz; Domagala, Jaroslaw Z.; Mathieu, Roland

    2011-01-01

    °C) annealing of (Ga,Mn)As layers with Mn concentrations between 0.1% and 2%, grown by molecular beam epitaxy at 270°C. Decomposition of (Ga,Mn)As is already observed at the lowest annealing temperature of 400°C for layers with initial Mn content of 1% and 2%. Both cubic and hexagonal (Mn......,Ga)As nanocrystals, with similar diameters of 7-10 nm, are observed to coexist in layers with an initial Mn content of 0.5% and 2% after higher-temperature annealing. Measurements of magnetization relaxation in the time span 0.1-10 000 s provide evidence for superparamagnetic properties of the (Mn,Ga)As nanocrystals......X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by moderate-temperature (400°C) and high-temperature (560°C and 630...

  19. Effect of the post-annealing temperature on the thermal-decomposed NiOx hole contact layer for perovskite solar cells

    Directory of Open Access Journals (Sweden)

    Yuxiao Guo

    2018-02-01

    Full Text Available A hysteresis-less inverted perovskite solar cell (PSC with power conversion efficiency (PCE of 13.57% was successfully achieved based on the thermal-decomposed NiOx hole contact layer, possessing better electron blocking and hole extraction properties for its suitable work function and high-conduction band edge position. Herein, the transparent and high-crystalline NiOx film is prepared by thermal-decomposing of the solution-derived Ni(OH2 film in our study, which is then employed as hole transport layer (HTL of the organic–inorganic hybrid PSCs. Reasonably, the post-annealing treatment, especially for the annealing temperature, could greatly affect the Ni(OH2 decomposition process and the quality of decomposed NiOx nanoparticles. The vital NiOx HTLs with discrepant morphology, crystallinity and transmission certainly lead to a wide range of device performance. As a result, an annealing process of 400∘C/2h significantly promotes the photovoltaic properties of the NiOx layer and the further device performance.

  20. Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. I. Effect of particle emission from the bottom surface in a CF4 plasma

    International Nuclear Information System (INIS)

    Min, Jae-Ho; Hwang, Sung-Wook; Lee, Gyeo-Re; Moon, Sang Heup

    2002-01-01

    The effect of etch-product redeposition on sidewall properties during the etching of step-shaped SiO 2 patterns in a CF 4 plasma was examined using a Faraday cage located in a transformer coupled plasma etcher. Sidewall properties were observed for two cases: with and without particles emitted from the bottom surface in normal contact with the sidewall. Particles sputtered from the bottom surface were redeposited on the sidewall, which contributes to the formation of a passivation layer on the surface of the latter. The passivation layer consisted of silicon oxide, Si x O y , and fluorocarbon, C x F y , the latter comprising the major species. Ar plasma experiments confirmed that C x F y or a fluorocarbon polymer must be present on the sidewall in order for the Si x O y species to be deposited on the surface. The redeposited particles, which were largely F-deficient fluorocarbon species, as evidenced by x-ray photoelectron spectroscopy analyses, functioned as precursors for fluorocarbon polymerization, resulting in a rough sidewall surface. The chemical etch rates of SiO 2 were retarded by the redeposition of particles, which eventually formed a thick layer, eventually covering the bulk SiO 2 . Auger electron spectroscopy analyses of the sidewall surface affected by the emission from the bottom suggest that the surface consists of three distinct layers: a surface-carbon layer, a redeposition-etch combined layer, and bulk SiO 2

  1. SiO2-induced release of sVEGFRs from pulmonary macrophages.

    Science.gov (United States)

    Chao, Jie; Lv, Yan; Chen, Jin; Wang, Jing; Yao, Honghong

    2018-01-01

    The inhalation of silicon dioxide (SiO 2 ) particles causes silicosis, a stubborn pulmonary disease that is characterized by alveolar inflammation during the early stage. Soluble cytokine receptors (SCRs) play important roles in regulating inflammation by either attenuating or promoting cytokine signaling. However, the role of SCRs in silicosis remains unknown. Luminex assays revealed increased soluble vascular endothelial growth factor receptor (sVEGFR) family levels in the plasma of silicosis patients. In an enzyme-linked immunosorbent assay (ELISA), cells from the differentiated human monocytic cell line U937 released sVEGFR family proteins after exposure to SiO 2 (50μg/cm 2 ). Further Western blot experiments revealed that VEGFR expression was also elevated in U937 cells. In contrast, levels of sVEGFR family members did not change in the supernatants of human umbilical vein endothelial cells (HUVECs) after exposure to SiO 2 (50μg/cm 2 ). Interestingly, VEGFR expression in HUVECs decreased after SiO 2 treatment. In a scratch assay, HUVECs exhibited cell migration ability, indicating the acquisition of mesenchymal properties. Our findings highlight the important role of sVEGFRs in both inflammation and fibrosis induced by SiO 2 , suggesting a possible mechanism for the fibrogenic effects observed in pulmonary diseases associated with fibrosis. Copyright © 2017 Elsevier B.V. All rights reserved.

  2. Thermodynamics of Bi2O3-SiO2 system

    Directory of Open Access Journals (Sweden)

    Onderka B.

    2017-01-01

    Full Text Available Thermodynamic properties of the liquid Bi2O3-SiO2 solutions were determined from the results of the electrochemical measurements by use of the solid oxide galvanic cells with YSZ (Yttria-Stabilized-Zirconia electrolyte. Activities of Bi2O3 in the solutions were determined for 0.2, 0.3, 0.4, and 0.5 SiO2 mole fractions in the temperature range 1073-1293 K from measured electromotive force (e.m.f of the solid electrolyte galvanic cell: Bi, Bi2O3-SiO2 | YSZ | air (pO2 = 0.213 bar Additionally, heat capacity data obtained for two solid phases 6Bi2O3•SiO2 and 2Bi2O3•3SiO2 were included into optimization of thermodynamic properties of the system. Optimization procedure was supported by differential thermal analysis (DTA data obtained in this work as well as those accepted from the literature. Using the data obtained in this work, and the information about phase equilibria found in the literature, binary system Bi2O3-SiO2 was assessed with the ThermoCalc software.

  3. Comparisons between TiO2- and SiO2-flux assisted TIG welding processes.

    Science.gov (United States)

    Tseng, Kuang-Hung; Chen, Kuan-Lung

    2012-08-01

    This study investigates the effects of flux compounds on the weld shape, ferrite content, and hardness profile in the tungsten inert gas (TIG) welding of 6 mm-thick austenitic 316 L stainless steel plates, using TiO2 and SiO2 powders as the activated fluxes. The metallurgical characterizations of weld metal produced with the oxide powders were evaluated using ferritoscope, optical microscopy, and Vickers microhardness test. Under the same welding parameters, the penetration capability of TIG welding with TiO2 and SiO2 fluxes was approximately 240% and 292%, respectively. A plasma column made with SiO2 flux exhibited greater constriction than that made with TiO2 flux. In addition, an anode root made with SiO2 flux exhibited more condensation than that made with TiO2 flux. Results indicate that energy density of SiO2-flux assisted TIG welding is higher than that of TiO2-flux assisted TIG welding.

  4. The improvement of SiO2 nanotubes electrochemical behavior by hydrogen atmosphere thermal treatment

    Science.gov (United States)

    Spataru, Nicolae; Anastasescu, Crina; Radu, Mihai Marian; Balint, Ioan; Negrila, Catalin; Spataru, Tanta; Fujishima, Akira

    2018-06-01

    Highly defected SiO2 nanotubes (SiO2-NT) were obtained by a simple sol-gel procedure followed by calcination. Boron-doped diamond (BDD) polycrystalline films coated with SiO2-NT were used as working electrodes and, unexpectedly, cyclic voltammetric experiments have shown that the concentration of both positive and negative defects at the surface is high enough to enable redox processes involving positively charged Ru(bpy)32+/3+ to occur. Conversely, no electrochemical activity was put into evidence for Fe(CN)63-/4- species, most likely as a result of the strong electrostatic repulsion exerted by the negatively charged SiO2 surface. The concentration of surface defects was further increased by a subsequent thermal treatment in a hydrogen atmosphere which, as EIS measurements have shown, significantly promotes Ru(bpy)32+ anodic oxidation. Digital simulation of the voltammetric responses demonstrated that this treatment does not lead to a similar increase of the number of electron-donor sites. It was also found that methanol anodic oxidation at hydrogenated SiO2-NT-supported platinum results in Tafel slopes of 116-220 mV decade-1, comparable to those reported for both conventional PtRu and Pt-oxide catalysts.

  5. Dependence of Photocatalytic Activity of TiO2-SiO2 Nanopowders

    Directory of Open Access Journals (Sweden)

    M. Riazian

    2014-10-01

    Full Text Available Structural properties and chemical composition change the photocatalytic activity in TiO2-SiO2 nanopowder composite. The SiO2-TiO2 nanostructure is synthesized based on sol–gel method. The nanoparticles are characterized by x-ray fluorescents (XRF, x- ray diffraction (XRD, tunneling electron microscopy (TEM, field emission scanning electron microscopy (FE-SEM, UV-vis. Spectrophotometer and furrier transmission create infrared absorption (FTIR techniques. The rate constant k for the degradation of methylen blue in its aqueous solution under UV irradiation is determined as a measure of photocatalytic activity. Dependence between photocatalytic activity and SiO2 content in the composite is determined. Rate constant k is found dependent on the content of SiO2 in the composite that calcined at 900 oC. The addition of low composition SiO2 to the TiO2 matrix (lower than 45% enhances the photocatalytic activity due to thermal stability and increasing in the surface area. The effects of chemical compositions on the surface topography and the crystallization of phases are studied.

  6. UV-VUV laser induced phenomena in SiO2 glass

    International Nuclear Information System (INIS)

    Kajihara, Koichi; Ikuta, Yoshiaki; Oto, Masanori; Hirano, Masahiro; Skuja, Linards; Hosono, Hideo

    2004-01-01

    Creation and annihilation of point defects were studied for SiO 2 glass exposed to ultraviolet (UV) and vacuum UV (VUV) lights to improve transparency and radiation toughness of SiO 2 glass to UV-VUV laser light. Topologically disordered structure of SiO 2 glass featured by the distribution of Si-O-Si angle is a critical factor degrading transmittance near the fundamental absorption edge. Doping with terminal functional groups enhances the structural relaxation and reduces the number of strained Si-O-Si bonds by breaking up the glass network without creating the color centers. Transmittance and laser toughness of SiO 2 glass for F 2 laser is greatly improved in fluorine-doped SiO 2 glass, often referred as 'modified silica glass'. Interstitial hydrogenous species are mobile and reactive at ambient temperature, and play an important role in photochemical reactions induced by exposure to UV-VUV laser light. They terminate the dangling-bond type color centers, while enhancing the formation of the oxygen vacancies. These findings are utilized to develop a deep-UV optical fiber transmitting ArF laser photons with low radiation damage

  7. Integrated nanophotonic hubs based on ZnO-Tb(OH3/SiO2 nanocomposites

    Directory of Open Access Journals (Sweden)

    Lin Yu

    2011-01-01

    Full Text Available Abstract Optical integration is essential for practical application, but it remains unexplored for nanoscale devices. A newly designed nanocomposite based on ZnO semiconductor nanowires and Tb(OH3/SiO2 core/shell nanospheres has been synthesized and studied. The unique sea urchin-type morphology, bright and sharply visible emission bands of lanthanide, and large aspect ratio of ZnO crystalline nanotips make this novel composite an excellent signal receiver, waveguide, and emitter. The multifunctional composite of ZnO nanotips and Tb(OH3/SiO2 nanoparticles therefore can serve as an integrated nanophotonics hub. Moreover, the composite of ZnO nanotips deposited on a Tb(OH3/SiO2 photonic crystal can act as a directional light fountain, in which the confined radiation from Tb ions inside the photonic crystal can be well guided and escape through the ZnO nanotips. Therefore, the output emission arising from Tb ions is truly directional, and its intensity can be greatly enhanced. With highly enhanced lasing emissions in ZnO-Tb(OH3/SiO2 as well as SnO2-Tb(OH3/SiO2 nanocomposites, we demonstrate that our approach is extremely beneficial for the creation of low threshold and high-power nanolaser.

  8. Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

    Directory of Open Access Journals (Sweden)

    Sebastian Gutsch

    2015-04-01

    Full Text Available We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich oxynitride layer sandwiched between two SiO2 diffusion barriers and subjected to a high-temperature annealing. We find that such single layers are very sensitive to the annealing parameters and may lead to a significant loss of excess silicon. In addition, these ultrathin layers suffer from significant electron beam damage that needs to be minimized in order to image the pristine sample morphology. Finally we demonstrate how the silicon nanocrystal size distribution develops from a broad to a narrow log-normal distribution, when the initial precipitation layer thickness and stoichiometry are below a critical value.

  9. SiO2-coated LiNi0.915Co0.075Al0.01O2 cathode material for rechargeable Li-ion batteries.

    Science.gov (United States)

    Zhou, Pengfei; Zhang, Zhen; Meng, Huanju; Lu, Yanying; Cao, Jun; Cheng, Fangyi; Tao, Zhanliang; Chen, Jun

    2016-11-24

    We reported a one-step dry coating of amorphous SiO 2 on spherical Ni-rich layered LiNi 0.915 Co 0.075 Al 0.01 O 2 (NCA) cathode materials. Combined characterization of XRD, EDS mapping, and TEM indicates that a SiO 2 layer with an average thickness of ∼50 nm was uniformly coated on the surface of NCA microspheres, without inducing any change of the phase structure and morphology. Electrochemical tests show that the 0.2 wt% SiO 2 -coated NCA material exhibits enhanced cyclability and rate properties, combining with better thermal stability compared with those of pristine NCA. For example, 0.2 wt% SiO 2 -coated NCA delivers a high specific capacity of 181.3 mA h g -1 with a capacity retention of 90.7% after 50 cycles at 1 C rate and 25 °C. Moreover, the capacity retention of this composite at 60 °C is 12.5% higher than that of pristine NCA at 1 C rate after 50 cycles. The effects of SiO 2 coating on the electrochemical performance of NCA are investigated by EIS, CV, and DSC tests, the improved performance is attributed to the surface coating layer of amorphous SiO 2 , which effectively suppresses side reactions between NCA and electrolytes, decreases the SEI layer resistance, and retards the growth of charge-transfer resistance, thus enhancing structural and cycling stability of NCA.

  10. Microwave electromagnetic and absorption properties of SiO2/C core/shell composites plated with metal cobalt

    Science.gov (United States)

    Shen, Guozhu; Fang, Xumin; Wu, Hongyan; Wei, Hongyu; Li, Jingfa; Li, Kaipeng; Mei, Buqing; Xu, Yewen

    2017-04-01

    A facile method has been developed to fabricate magnetic core/shell SiO2/C/Co sub-microspheres via the pyrolysis of SiO2/PANI (polyaniline) and electroless plating method. The electromagnetic parameters of these SiO2/C and SiO2/C/Co composites were measured and the microwave reflection loss properties were evaluated in the frequency range of 2-18 GHz. The results show that the dielectric loss of SiO2/C composite increases with the increase of carbonization temperature and the magnetic loss enhances due to the deposition of cobalt on the SiO2/C sub-microspheres. The reflection loss results exhibit that the microwave absorption properties of the SiO2/C/Co composites are more excellent than those of SiO2/C composites for each thickness. The maximum effective absorption bandwidth (reflection loss ≤ -10 dB) arrives at 5.0 GHz (13.0-18 GHz) for SiO2/C/Co composite with 1.5 mm of thickness and the minimum reflection loss value is -24.0 dB at 5.0 GHz with 4.0 mm of thickness. The microwave loss mechanism of the SiO2/C/Co composites was also discussed in this paper.

  11. Ni nanoparticles decorated onto graphene oxide with SiO2 as interlayer for high performance on histidine-rich protein separation

    Science.gov (United States)

    Yang, Xiaodan; Zhang, Min; Zheng, Jing; Li, Weizhen; Gan, Wenjun; Xu, Jingli; Hayat, Tasawar; Alharbi, Njud S.; Yang, Fan

    2018-05-01

    Sandwich-like structure of graphene oxide (GO) @SiO2@C-Ni nanosheets were prepared by combining an extended stöber method with subsequent carbonization treatment, in which polydopamine was used as reducing agent and carbon source. Firstly, the GO nanosheets were covered with SiO2 interlayer and finally coated with a outer shell of nickel ion doped polydopamine (PDA-Ni2+) with an extended stöber method. Followed by a carbonization to produce the GO@SiO2@C-Ni sheets with metallic nickel nanoparticles embedded in PDA-derived thin graphic carbon layer. Notably, silica interlayer played a vital role in the formation of such GO@SiO2@C-Ni sheets. Without the protection of SiO2, the hydrophobic graphene@C-Ni composites were obtained instead. While with silica layer as the spacer, the obtained hydrophilic GO@SiO2@C-Ni composites were not only well dispersed in the solution, but also can be adjusted in terms of the size and density of Ni nanoparticles (NPs) on surface by changing the calcination temperature or the molar ratio between dopamine and nickel salt. Furthermore, nickel nanoparticles decorated on GO@SiO2 sheets were employed to enrich His-rich proteins (BHb and BSA) via specific metal affinity force between polyhistidine groups and nickel nanoparticles.

  12. Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Jingjin Wu

    2016-08-01

    Full Text Available The 4 at. % zirconium-doped zinc oxide (ZnO:Zr films grown by atomic layer deposition (ALD were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV–vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350–550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

  13. Thermal annealing of amorphous Ti-Si-O thin films

    OpenAIRE

    Hodroj , Abbas; Chaix-Pluchery , Odette; Audier , Marc; Gottlieb , Ulrich; Deschanvres , Jean-Luc

    2008-01-01

    International audience; Ti-Si-O thin films were deposited using an aerosol chemical vapor deposition process at atmospheric pressure. The film structure and microstructure were analysed using several techniques before and after thermal annealing. Diffraction results indicate that the films remain X-ray amorphous after annealing whereas Fourier transform infrared spectroscopy gives evidence of a phase segregation between amorphous SiO2 and well crystallized anatase TiO2. Crystallization of ana...

  14. THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

    Directory of Open Access Journals (Sweden)

    Peter Hornak

    2017-12-01

    Full Text Available Tungsten carbide (WC/C layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT, indentation modulus (EIT and coefficient of friction (COF values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively.

  15. Optical properties of amorphous SiO2-TiO2 multi-nanolayered coatings for 1064-nm mirror technology

    Science.gov (United States)

    Magnozzi, M.; Terreni, S.; Anghinolfi, L.; Uttiya, S.; Carnasciali, M. M.; Gemme, G.; Neri, M.; Principe, M.; Pinto, I.; Kuo, L.-C.; Chao, S.; Canepa, M.

    2018-01-01

    The use of amorphous, SiO2-TiO2 nanolayered coatings has been proposed recently for the mirrors of 3rd-generation interferometric detectors of gravitational waves, to be operated at low temperature. Coatings with a high number of low-high index sub-units pairs with nanoscale thickness were found to preserve the amorphous structure for high annealing temperatures, a key factor to improve the mechanical quality of the mirrors. The optimization of mirror designs based on such coatings requires a detailed knowledge of the optical properties of sub-units at the nm-thick scale. To this aim we have performed a Spectroscopic Ellipsometry (SE) study of amorphous SiO2-TiO2 nanolayered films deposited on Si wafers by Ion Beam Sputtering (IBS). We have analyzed films that are composed of 5 and 19 nanolayers (NL5 and NL19 samples) and have total optical thickness nominally equivalent to a quarter of wavelength at 1064 nm. A set of reference optical properties for the constituent materials was obtained by the analysis of thicker SiO2 and TiO2 homogeneous films (∼ 120 nm) deposited by the same IBS facility. By flanking SE with ancillary techniques, such as TEM and AFM, we built optical models that allowed us to retrieve the broad-band (250-1700 nm) optical properties of the nanolayers in the NL5 and NL19 composite films. In the models which provided the best agreement between simulation and data, the thickness of each sub-unit was fitted within rather narrow bounds determined by the analysis of TEM measurements on witness samples. Regarding the NL5 sample, with thickness of 19.9 nm and 27.1 nm for SiO2 and TiO2 sub-units, respectively, the optical properties presented limited variations with respect to the thin film counterparts. For the NL19 sample, which is composed of ultrathin sub-units (4.4 nm and 8.4 nm for SiO2 and TiO2, respectively) we observed a significant decrease of the IR refraction index for both types of sub-units; this points to a lesser mass density with

  16. Investigation of luminescence properties in SiO2: Tb, Yb upconversion inverse opal

    International Nuclear Information System (INIS)

    Yang Zhengwen; Yan Dong; Song Zhiguo; Zhou Dacheng; Yu Xue; Yang Yong; Yin Zhaoyi; Yan Lei; Wang Rongfei; Wu Hangjun; Qiu Jianbei

    2012-01-01

    The SiO 2 : Tb, Yb inverse opals with photonic band gap at 465 or 543 nm were prepared, and an effect of photonic band gap on upconversion spontaneous emission from Tb 3+ was investigated. The results show that the photonic band gap has a significant influence on the upconversion emission of the SiO 2 : Tb, Yb inverse opals. The upconversion luminescence of the Tb 3+ ions is suppressed in the inverse opal compared with the luminescence of that of the reference sample. - Highlights: ► Upconversion emission from Tb 3+ was observed in the SiO 2 : Tb, Yb inverse opal. ► UC emission of Tb 3+ was modulated by controlling the structure of inverse opal. ► UC emission of Tb 3+ was depressed in the inverse opal.

  17. Ion assisted deposition of SiO2 film from silicon

    Science.gov (United States)

    Pham, Tuan. H.; Dang, Cu. X.

    2005-09-01

    Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

  18. The hydrophobic and omnidirectional antireflection coating of SiO2 nanospheres with C18-TEOS

    Science.gov (United States)

    Hsu, Cheng-Chih; Lan, Wen-Lin; Chen, Nien-Po; Wu, Chyan-Chyi

    2014-06-01

    This paper demonstrates the antireflection coating of SiO2 nanospheres applied to cover glass by using the optimal spin-coating method. Because of the hydrolysis and condensation reactions between the SiO2 nanosphere antireflection (AR) coating and n-octadecyltriethoxysilane solution (C18-TEOS), the contact angle of the AR coating with hydrophobic treatment is improved approximately 38%, and the moisture-resistance remains unchanged, which preserved similar transmittance for six weeks. Furthermore, the AR coating with hydrophobic treatment exhibits approximately 3% and 7% improvement in the transmittance at normal and oblique incidence, respectively. The hydrophobic and omnidirectional AR coating with nanoscale SiO2 particles can be fabricated using the proposed simple and economical method.

  19. SiO2 coating of silver nanoparticles by photoinduced chemical vapor deposition

    International Nuclear Information System (INIS)

    Boies, Adam M; Girshick, Steven L; Roberts, Jeffrey T; Zhang Bin; Nakamura, Toshitaka; Mochizuki, Amane

    2009-01-01

    Gas-phase silver nanoparticles were coated with silicon dioxide (SiO 2 ) by photoinduced chemical vapor deposition (photo-CVD). Silver nanoparticles, produced by inert gas condensation, and a SiO 2 precursor, tetraethylorthosilicate (TEOS), were exposed to vacuum ultraviolet (VUV) radiation at atmospheric pressure and varying temperatures. The VUV photons dissociate the TEOS precursor, initiating a chemical reaction that forms SiO 2 coatings on the particle surfaces. Coating thicknesses were measured for a variety of operation parameters using tandem differential mobility analysis and transmission electron microscopy. The chemical composition of the particle coatings was analyzed using energy dispersive x-ray spectrometry and Fourier transform infrared spectroscopy. The highest purity films were produced at 300-400 0 C with low flow rates of additional oxygen. The photo-CVD coating technique was shown to effectively coat nanoparticles and limit core particle agglomeration at concentrations up to 10 7 particles cm -3 .

  20. Comparative X-ray photoelectron spectroscopy study of plasma enhanced chemical vapor deposition and micro pressure chemical vapor deposition of phosphorus silicate glass layers after rapid thermal annealing

    International Nuclear Information System (INIS)

    Beshkov, G.; Krastev, V.; Gogova, D.; Talik, E.; Adamies, M.

    2008-01-01

    In this paper the bonding state of Phosphorus Silicate Glass (PSG) layers obtained by two different technological approaches, i.e. in two types of reactors: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Micro Pressure Chemical Vapor Deposition (MPCVD) are investigated employing XPS and AES. The PSG layers are deposited at 380 0 C and 420 0 C in corresponding reactors. XPS and AES analyses show that Si2p peak recorded from PECVD layers are not as expected at their position characteristics of silicon dioxide but instead they are at the characteristic of elemental silicon. Plasma enhancement during deposition leads to less oxidized and more inhomogeneous layer. After rapid thermal annealing the Si2p peak is situated at position characteristic of silicon dioxide. (authors)

  1. Study on the technique for precision measurement of density of SiO_2 foam shells

    International Nuclear Information System (INIS)

    Ma Xiaojun; Gao Dangzhong; Meng Jie

    2013-01-01

    The measuring method based on vertical scanning interference and combined with the relation between refraction index and density of SiO_2 foam shells is introduced, and the relation is analyzed according to formulas of Lorentz-Lorenz and Gladstone-Dale. The experimental result and measuring uncertainty evaluation indicate that the precision measurement of density of low density SiO_2 foam shells can be realized by using the vertical scanning interference technique and combining with Gladstone and Dale analysis method, and the measuring uncertainty is about 5%. (authors)

  2. A microbiological evaluation of SiO2-coated textiles in hospital interiors

    DEFF Research Database (Denmark)

    Mogensen, Jeppe; Jørgensen, Poul-Erik; Thomsen, Trine Rolighed

    2016-01-01

    . From this perspective, the purpose of this paper is therefore to address focus on alternative passive coatings that without actively killing the bacteria provide a hydrophobic and easy-to-clean textile surface. The paper relates to an in-situ study evaluating the effect and cleaning potential of SiO2...... contact plates through a three-week period. By determining the level of contamination on these surfaces, the study illustrates that the SiO2-coated textile is possible to clean to an acceptable level below the critical limit value of 2,5 Colony Forming Units (CFU) per cm2. In comparison, the traditional...

  3. Effects of deposition rates on laser damage threshold of TiO2/SiO2 high reflectors

    International Nuclear Information System (INIS)

    Yao Jianke; Xu Cheng; Ma Jianyong; Fang Ming; Fan Zhengxiu; Jin Yunxia; Zhao Yuanan; He Hongbo; Shao Jianda

    2009-01-01

    TiO 2 single layers and TiO 2 /SiO 2 high reflectors (HR) are prepared by electron beam evaporation at different TiO 2 deposition rates. It is found that the changes of properties of TiO 2 films with the increase of rate, such as the increase of refractive index and extinction coefficient and the decrease of physical thickness, lead to the spectrum shift and reflectivity bandwidth broadening of HR together with the increase of absorption and decrease of laser-induced damage threshold. The damages are found of different morphologies: a shallow pit to a seriously delaminated and deep crater, and the different amorphous-to-anatase-to-rutile phase transition processes detected by Raman study. The frequency shift of Raman vibration mode correlates with the strain in film. Energy dispersive X-ray analysis reveals that impurities and non-stoichiometric defects are two absorption initiations resulting to the laser-induced transformation.

  4. Lateral protonic/electronic hybrid oxide thin-film transistor gated by SiO2 nanogranular films

    International Nuclear Information System (INIS)

    Zhu, Li Qiang; Chao, Jin Yu; Xiao, Hui

    2014-01-01

    Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO 2 nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1 V. A resistor-loaded inverter is built, showing a high voltage gain of ∼8 at a low supply voltage of 1 V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics

  5. Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM application

    Science.gov (United States)

    Wu, Facai; Si, Shuyao; Shi, Tuo; Zhao, Xiaolong; Liu, Qi; Liao, Lei; Lv, Hangbing; Long, Shibing; Liu, Ming

    2018-02-01

    Pt/SiO2:metal nanoparticles/Pt sandwich structure is fabricated with the method of metal ion (Ag) implantation. The device exhibits multilevel storage with appropriate R off/R on ratio, good endurance and retention properties. Based on transmission electron microscopy and energy dispersive spectrometer analysis, we confirm that Pt nanoparticles are spurted into SiO2 film from Pt bottom electrode by Ag implantation; during electroforming, the local electric field can be enhanced by these Pt nanoparticles, meanwhile the Ag nanoparticles constantly migrate toward the Pt nanoparticles. The implantation induced nanoparticles act as trap sites in the resistive switching layer and play critical roles in the multilevel storage, which is evidenced by the negative differential resistance effect in the current-voltage (I-V) measurements.

  6. Effect of Initial Surface Quality on Final Roughness and Texture of Annealed Ni-5at.%W Tapes Coated with a Gd2Zr2O7 Buffer Layer

    DEFF Research Database (Denmark)

    Wulff, Anders Christian; Yue, Zhao; Mishin, Oleg

    2012-01-01

    Surface roughness of Ni-5at.%W tapes in coldrolled and annealed conditions after subsequent deposition of a Gd2Zr2O7 buffer layer has been studied as a function of the polishing grade, taking grain boundary grooving into account. It is found that annealing decreases the initial mean surface...... roughness achieved by mechanical polishing of the cold-rolled material, except after very fine polishing. Furthermore, compared to the surface of the tape annealed after fine polishing, the mean roughness slightly increases after the deposition of the buffer layer. Grain boundary grooving was found...... to impose a lower limit for the mean surface roughness. In the annealed tapes, the fraction of orientations within 5◦ from the ideal cube orientation was observed to be very sensitive to the surface roughness before annealing....

  7. High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air

    Directory of Open Access Journals (Sweden)

    Jian Gao

    2018-01-01

    Full Text Available In this work, we have investigated the effect of low temperature post-annealing in air on atomic-layer-deposited ZnO metal-semiconductor-metal (MSM ultraviolet photodetectors (UV PDs. The results indicate that the post-annealing could reduce the dark-current of the MSM device by ten orders of magnitude; however, it also decreased the photo-current of the UV PD by one order of magnitude. The former could be related to the reduction of oxygen vacancies and the crystallization enhancement of the ZnO film; the latter should be attributed to the reduction of defects in the ZnO film, thus resulting in a smaller decrease in thermionic-field emission tunneling barrier because of reduced holes trapped near the interface. For the post-annealing at 250 oC for 30 min, the dark-current was equal to 5.16×10-11 A, and the ultraviolet-visible rejection ratio approached 1.4×106, and the responsivity was as high as 1.78×103 A/W at 5V. Further, prolonging annealing time at a lower temperature (200 oC also could greatly improve the performance of the UV PD, i.e., 90 min annealing produced a quite large responsivity of 1.30×104 A/W at 5 V while maintaining a very low dark-current (1.42×10-10 A and a large ultraviolet-visible rejection ratio (4.06×105.

  8. Synthesis, characterization, and thermal stability of SiO2/TiO2/CR-Ag multilayered nanostructures

    Science.gov (United States)

    Díaz, Gabriela; Chang, Yao-Jen; Philipossian, Ara

    2018-06-01

    The controllable synthesis and characterization of novel thermally stable silver-based particles are described. The experimental approach involves the design of thermally stable nanostructures by the deposition of an interfacial thick, active titania layer between the primary substrate (SiO2 particles) and the metal nanoparticles (Ag NPs), as well as the doping of Ag nanoparticles with an organic molecule (Congo Red, CR). The nanostructured particles were composed of a 330-nm silica core capped by a granular titania layer (10 to 13 nm in thickness), along with monodisperse 5 to 30 nm CR-Ag NPs deposited on top. The titania-coated support (SiO2/TiO2 particles) was shown to be chemically and thermally stable and promoted the nucleation and anchoring of CR-Ag NPs, which prevented the sintering of CR-Ag NPs when the structure was exposed to high temperatures. The thermal stability of the silver composites was examined by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). Larger than 10 nm CR-Ag NPs were thermally stable up to 300 °C. Such temperature was high enough to destabilize the CR-Ag NPs due to the melting point of the CR. On the other hand, smaller than 10 nm Ag NPs were stable at temperatures up to 500 °C because of the strong metal-metal oxide binding energy. Energy dispersion X-ray spectroscopy (EDS) was carried out to qualitatively analyze the chemical stability of the structure at different temperatures which confirmed the stability of the structure and the existence of silver NPs at temperatures up to 500 °C.

  9. Mechanisms of aluminium-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers.

    Science.gov (United States)

    Wang, J Y; Wang, Z M; Jeurgens, L P H; Mittemeijer, E J

    2009-06-01

    Aluminium-induced crystallization (ALIC) of amorphous Si and subsequent layer exchange (ALILE) occur in amorphous-Si/polycrystalline-Al bilayers (a-Si/c-Al) upon annealing at temperatures as low as 165 degrees C and were studied by X-ray diffraction and Auger electron spectroscopic depth profiling. It follows that: (i) nucleation of Si crystallization is initiated at Al grain boundaries and not at the a-Si/c-Al interface; (ii) low-temperature annealing results in a large Si grain size in the continuous c-Si layer produced by ALILE. Thermodynamic model calculations show that: (i) Si can "wet" the Al grain boundaries due to the favourable a-Si/c-Al interface energy (as compared to the Al grain-boundary energy); (ii) the wetting-induced a-Si layer at the Al grain boundary can maintain its amorphous state only up to a critical thickness, beyond which nucleation of Si crystallization takes place; and (iii) a tiny driving force controls the kinetics of the layer exchange.

  10. Structural, optical and electrical properties of quasi-monocrystalline silicon thin films obtained by rapid thermal annealing of porous silicon layers

    International Nuclear Information System (INIS)

    Hajji, M.; Khardani, M.; Khedher, N.; Rahmouni, H.; Bessais, B.; Ezzaouia, H.; Bouchriha, H.

    2006-01-01

    Quasi-mono-crystalline silicon (QMS) layers have a top surface like crystalline silicon with small voids in the body. Such layers are reported to have a higher absorption coefficient than crystalline silicon at the interesting range of the solar spectrum for photovoltaic application. In this work we present a study of the structural, optical and electrical properties of quasimonocrystalline silicon thin films. Quasimonocrystalline silicon thin films were obtained from porous silicon, which has been annealed at a temperature ranging from 950 to 1050 deg. C under H 2 atmosphere for different annealing durations. The porous layers were prepared by conventional electrochemical anodization using a double tank cell and a HF / Ethanol electrolyte. Porous silicon is formed on highly doped p + -type silicon substrates that enable us to prevent back contacts for the anodization. Atomic Force Microscope (AFM) was used to study the morphological quality of the prepared layers. Optical properties were extracted from transmission and reflectivity spectra. Dark I-V characteristics were used to determine the electrical conductivity of quasimonocrystalline silicon thin films. Results show an important improvement of the absorption coefficient of the material and electrical conductivity reaches a value of twenty orders higher than that of starting mesoporous silicon

  11. More accurate definition of liquation dome in Na2O-B2O3-SiO2 system

    International Nuclear Information System (INIS)

    Alekseeva, Z.D.; Mazurin, O.V.; Aver'yanov, V.I.; Galakhov, F.Ya.

    1977-01-01

    The liquation region in the system Na 2 O-B 2 O 3 -SiO 2 was investigated. The liquation temperatures were determined by the boundary of disappearance of opalescence in specimens with pre-induced opalescence. Extrapolation of the concentration dependences of the liquation temperature along sections with a constant SiO 2 content to a point indicates that with a SiO 2 content of 20-40% the liquation boundary in the system B 2 O 3 -SiO 2 hardly lies above 450 deg C

  12. Silver effect on the structure of SiO2-CaO-P2O5 ternary system

    International Nuclear Information System (INIS)

    Vulpoi, Adriana; Baia, Lucian; Simon, Simion; Simon, Viorica

    2012-01-01

    In this study are reported results obtained from the structural, morphological and textural investigations of 56SiO 2 ∙(40-x)CaO·4P 2 O 5 ·xAg 2 O system, where 0 ≤ x ≤ 10 mol%. The samples obtained by sol–gel method were annealed and then characterized by X-ray diffraction (XRD), differential thermal analysis (DTA), thermal gravimetric analysis (TGA), vibrational spectroscopy (Raman, FTIR), N 2 -adsorption measurements, and transmission electron microscopy (TEM). XRD patterns of the investigated samples exhibit tricalcium phosphate (TCP) nanostructured phase and show the existence of metallic silver as dispersed phase. The presence of apatite-like phase is underlined by the recorded Raman and especially FT-IR spectra. TEM pictures indicate the presence of silver nanoparticles of almost spherical shapes and various sizes inside the matrix, depending on the Ag 2 O content. Regarding the textural properties, it was observed both a decrease of the specific surface area as well as a progressive change of the mesoporous characteristics with the silver addition, the latter behavior recommending the potential use of these samples for applications, where the morphology control is required.

  13. Diffusion barrier performance of novel Ti/TaN double layers for Cu metallization

    International Nuclear Information System (INIS)

    Zhou, Y.M.; He, M.Z.; Xie, Z.

    2014-01-01

    Highlights: • Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum. • The Ti/TaN double layers improved the adhesion with Cu thin films and showed good diffusion barrier between Cu and SiO 2 /Si up to the annealing condition. • The failure mechanism of Ti/TaN bi-layer is similar with the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si. - Abstract: Novel Ti/TaN double layers offering good stability as a barrier against Cu metallization have been made achievable by annealing in vacuum better than 1 × 10 −3 Pa. Ti/TaN double layers were formed on SiO 2 /Si substrates by DC magnetron sputtering and then the properties of Cu/Ti/TaN/SiO 2 /Si film stacks were studied. It was found that the Ti/TaN double layers provide good diffusion barrier between Cu and SiO 2 /Si up to 750 °C for 30 min. The XRD, Auger and EDS results show that the Cu–Si compounds like Cu 3 Si were formed by Cu diffusion through Ti/TaN barrier for the 800 °C annealed samples. It seems that the improved diffusion barrier property of Cu/Ti/TaN/SiO 2 /Si stack is due to the diffusion of nitrogen along the grain boundaries in Ti layer, which would decrease the defects in Ti film and block the diffusion path for Cu diffusion with increasing annealing temperature. The failure mechanism of Ti/TaN bi-layer is similar to the Cu/TaN/Si metallization system in which Cu atoms diffuse through the grain boundary of barrier and react with silicon to form Cu 3 Si

  14. Microstructure and mechanical properties of SiO2-BN ceramic and Invar alloy joints brazed with Ag–Cu–Ti+TiH2+BN composite filler

    Directory of Open Access Journals (Sweden)

    Y. Wang

    2016-03-01

    Full Text Available Ag–Cu–Ti + TiH2+BN composite filler was prepared to braze SiO2-BN ceramic and Invar alloy. The interfacial microstructure, mechanical properties, and residual stress distribution of the brazed joints were investigated. The results show that a wave-like Fe2Ti–Ni3Ti structure appears in the Invar substrate and a thin TiN–TiB2 reaction layer forms adjacent to the SiO2-BN ceramic. The added BN particles react with Ti to form TiN–TiB fine-particles, which is beneficial to refine the microstructure of the brazing seam and to greatly inhibit the brittle compounds formation. The interfacial microstructure at various brazing temperatures was analyzed, and the mechanism for the interfacial reactions responsible for the bonding was proposed. The maximum shear strength of the joints brazed with the composite filler at 880 °C for 10 min is 39 MPa, which is 30% greater than that brazed with Ag–Cu–Ti alloy. The improvement of the joint strength is attributed to the variation of joint microstructure and the reduction of tensile stresses induced in the SiO2-BN ceramic. The finite element analysis indicates that the peak tensile stress decreases from 230 to 142 MPa due to the addition of BN particles in the ceramic.

  15. Multifunctional hollow superhydrophobic SiO2 microspheres with robust and self-cleaning and separation of oil/water emulsions properties.

    Science.gov (United States)

    Guo, Fei; Wen, Qiuying; Peng, Yubing; Guo, Zhiguang

    2017-05-15

    Superhydrophobic materials have drawn great attention due to its' remarkable non-wetting properties and applications in many fields. In this paper, we synthesize a hollow superhydrophobic SiO 2 powder by typical template method and self-assembly functionalization. Robustness of many superhydrophobic surfaces has become the development bottleneck for industrial applications. Aiming at this problem, the adhesive epoxy resin is specially taken to use as the binding layer between superhydrophobic SiO 2 powder and substrates to create robust superhydrophobic coating. The mechanical durability of the obtained superhydrophobic coating is evaluated by a cyclic sandpaper abrasion. Also, the chemical stability of this superhydrophobic coating is assessed by exposuring it to different pH conditions and UV irradiation, respectively. Significantly, because of the special structure and superhydrophobicity/superoleophilicity of the hollow microspheres, these hollow superhydrophobic SiO 2 powders manifest great oil-adsorbing capacity, which thus can be used to separate oil/water mixtures and remove oil from oil-in-water emulsions. Copyright © 2017 Elsevier Inc. All rights reserved.

  16. Enhanced Photocatalytic Activity of ZrO2-SiO2 Nanoparticles by Platinum Doping

    Directory of Open Access Journals (Sweden)

    Mohammad W. Kadi

    2013-01-01

    Full Text Available ZrO2-SiO2 mixed oxides were prepared via the sol-gel method. Photo-assisted deposition was utilized for doping the prepared mixed oxide with 0.1, 0.2, 0.3, and 0.4 wt% of Pt. XRD spectra showed that doping did not result in the incorporation of Pt within the crystal structure of the material. UV-reflectance spectrometry showed that the band gap of ZrO2-SiO2 decreased from 3.04 eV to 2.48 eV with 0.4 wt% Pt doping. The results show a specific surface area increase of 20%. Enhanced photocatalysis of Pt/ZrO2-SiO2 was successfully tested on photo degradation of cyanide under illumination of visible light. 100% conversion was achieved within 20 min with 0.3 wt% of Pt doped ZrO2-SiO2.

  17. Hazards of TiO2 and amorphous SiO2 nanoparticles

    NARCIS (Netherlands)

    Reijnders, L.; Kahn, H.A.; Arif, I.A.

    2012-01-01

    TiO2 and amorphous SiO2 nanoparticles have been described as ‘safe’, ‘non-toxic’ and ‘environment friendly’ in scientific literature. However, though toxicity data are far from complete, there is evidence that these nanoparticles are hazardous. TiO2 nanoparticles have been found hazardous to humans

  18. Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films

    DEFF Research Database (Denmark)

    Leervad Pedersen, T.P.; Skov Jensen, J.; Chevallier, J.

    2005-01-01

    The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can...

  19. Preparation of TiO2-SiO2 composite photocatalysts for environmental applications

    Czech Academy of Sciences Publication Activity Database

    Paušová, Š.; Krýsa, J.; Jirkovský, Jaromír; Prevot, V.; Mailhot, G.

    2014-01-01

    Roč. 89, č. 8 (2014), s. 1129-1135 ISSN 0268-2575 Institutional support: RVO:61388955 Keywords : photocatalysis * TiO2/SiO2 * composite Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.349, year: 2014

  20. Catalytic combustion of trichloroethylene over TiO2-SiO2 supported catalysts

    NARCIS (Netherlands)

    Kulazynski, M.; van Ommen, J.G.; Trawczynski, J.; Walendziewski, J.

    2002-01-01

    Combustion of trichloroethylene (TCE) on Cr2O3, V2O5, Pt or Pd catalysts supported on TiO2-SiO2 as a carrier has been investigated. It was found that oxide catalysts are very active but their activity quickly diminishes due to loss of the active component, especially at higher reaction temperatures

  1. FeCl3.nano SiO2: An Efficient Heterogeneous Nano Catalyst for the ...

    African Journals Online (AJOL)

    NICO

    2012-05-28

    May 28, 2012 ... low cost, ease of preparation, and catalyst recycling.3,4 Among various solid .... FeCl3-SiO2 (np) to produce 1,8-dioxo-octahydro-xanthenes. RESEARCH ..... 38 G. Song, B. Wang, H. Luo and L. Yang, Catal. Commun., 2007, 8 ...

  2. Enhanced field emission properties of carbon nanotube bundles confined in SiO2 pits

    Science.gov (United States)

    Lim, Yu Dian; Grapov, Dmitry; Hu, Liangxing; Kong, Qinyu; Tay, Beng Kang; Labunov, Vladimir; Miao, Jianmin; Coquet, Philippe; Aditya, Sheel

    2018-02-01

    It has been widely reported that carbon nanotubes (CNTs) exhibit superior field emission (FE) properties due to their high aspect ratios and unique structural properties. Among the various types of CNTs, random growth CNTs exhibit promising FE properties due to their reduced inter-tube screening effect. However, growing random growth CNTs on individual catalyst islands often results in spread out CNT bundles, which reduces overall field enhancement. In this study, significant improvement in FE properties in CNT bundles is demonstrated by confining them in microfabricated SiO2 pits. Growing CNT bundles in narrow (0.5 μm diameter and 2 μm height) SiO2 pits achieves FE current density of 1-1.4 A cm-2, which is much higher than for freestanding CNT bundles (76.9 mA cm-2). From the Fowler Nordheim plots, confined CNT bundles show a higher field enhancement factor. This improvement can be attributed to the reduced bundle diameter by SiO2 pit confinement, which yields bundles with higher aspect ratios. Combining the obtained outcomes, it can be conclusively summarized that confining CNTs in SiO2 pits yields higher FE current density due to the higher field enhancement of confined CNTs.

  3. SiO2 Glass Density to Lower-Mantle Pressures

    DEFF Research Database (Denmark)

    Petitgirard, Sylvain; Malfait, Wim J.; Journaux, Baptiste

    2017-01-01

    and present Earth. SiO2 is the main constituent of Earth's mantle and is the reference model system for the behavior of silicate melts at high pressure. Here, we apply our recently developed x-ray absorption technique to the density of SiO2 glass up to 110 GPa, doubling the pressure range...... for such measurements. Our density data validate recent molecular dynamics simulations and are in good agreement with previous experimental studies conducted at lower pressure. Silica glass rapidly densifies up to 40 GPa, but the density trend then flattens to become asymptotic to the density of SiO2 minerals above 60...... GPa. The density data present two discontinuities at similar to 17 and similar to 60 GPa that can be related to a silicon coordination increase from 4 to a mixed 5/6 coordination and from 5/6 to sixfold, respectively. SiO2 glass becomes denser than MgSiO3 glass at similar to 40 GPa, and its density...

  4. Theory of Al2O3 incorporation in SiO2

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper

    2002-01-01

    Different possible forms of Al2O3 units in a SiO2 network are studied theoretically within the framework of density-functional theory. Total-energy differences between the various configurations are obtained, and simple thermodynamical arguments are used to provide an estimate of their relative...

  5. Crystallization kinetics of BaO-Al2O3-SiO2 glasses

    Science.gov (United States)

    Bansal, Narottam P.; Hyatt, Mark J.

    1989-01-01

    Barium aluminosilicate glasses are being investigated as matrix materials in high-temperature ceramic composites for structural applications. Kinetics of crystallization of two refractory glass compositions in the barium aluminosilicate system were studied by differential thermal analysis (DTA), X-ray diffraction (XRD), and scanning electron microscopy (SEM). From variable heating rate DTA, the crystallization activation energies for glass compositions (wt percent) 10BaO-38Al2O3-51SiO2-1MoO3 (glass A) and 39BaO-25Al2O3-35SiO2-1MoO3 (glass B) were determined to be 553 and 558 kJ/mol, respectively. On thermal treatment, the crystalline phases in glasses A and B were identified as mullite (3Al2O3-2SiO2) and hexacelsian (BaO-Al2O3-2SiO2), respectively. Hexacelsian is a high-temperature polymorph which is metastable below 1590 C. It undergoes structural transformation into the orthorhombic form at approximately 300 C accompanied by a large volume change which is undesirable for structural applications. A process needs to be developed where stable monoclinic celsian, rather than hexacelsian, precipitates out as the crystal phase in glass B.

  6. CoFe2O4-SiO2 Composites: Preparation and Magnetodielectric Properties

    Directory of Open Access Journals (Sweden)

    T. Ramesh

    2016-01-01

    Full Text Available Cobalt ferrite (CoFe2O4 and silica (SiO2 nanopowders have been prepared by the microwave hydrothermal (M-H method using metal nitrates as precursors of CoFe2O4 and tetraethyl orthosilicate as a precursor of SiO2. The synthesized powders were characterized by XRD and FESEM. The (100-x (CoFe2O4 + xSiO2 (where x = 0%, 10%, 20%, and 30% composites with different weight percentages have been prepared using ball mill method. The composite samples were sintered at 800°C/60 min using the microwave sintering method and then their structural and morphological studies were investigated using X-ray diffraction (XRD, Fourier transformation infrared (FTIR spectra, and scanning electron microscopy (SEM, respectively. The effect of SiO2 content on the magnetic and electrical properties of CoFe2O4/SiO2 nanocomposites has been studied via the magnetic hysteresis loops, complex permeability, permittivity spectra, and DC resistivity measurements. The synthesized nanocomposites with adjustable grain sizes and controllable magnetic properties make the applicability of cobalt ferrite even more versatile.

  7. Influences of ultra-thin Ti seed layers on the dewetting phenomenon of Au films deposited on Si oxide substrates

    Science.gov (United States)

    Kamiko, Masao; Kim, So-Mang; Jeong, Young-Seok; Ha, Jae-Ho; Koo, Sang-Mo; Ha, Jae-Geun

    2018-05-01

    The influences of a Ti seed layer (1 nm) on the dewetting phenomenon of Au films (5 nm) grown onto amorphous SiO2 substrates have been studied and compared. Atomic force microscopy results indicated that the introduction of Ti between the substrate and Au promoted the dewetting phenomenon. X-ray diffraction measurements suggested that the initial deposition of Ti promoted crystallinity of Au. A series of Auger electron spectroscopy and X-ray photoelectron spectroscopy results revealed that Ti transformed to a Ti oxide layer by reduction of the amorphous SiO2 substrate surface, and that the Ti seed layer remained on the substrate, without going through the dewetting process during annealing. We concluded that the enhancement of Au dewetting and the improvement in crystallinity of Au by the insertion of Ti could be attributed to the fact that Au location was changed from the surface of the amorphous SiO2 substrate to that of the Ti oxide layer.

  8. GaInAs Junction FET with InP buffer layer prepared by selective ion implantation of Be and rapid thermal annealing

    International Nuclear Information System (INIS)

    Selders, J.; Wachs, H.J.; Jurgensen, H.

    1986-01-01

    GaInAs JFETs were fabricated on VPE-grown GaInAs layers. The pn junctions have been realised with Be ion implantation and rapid thermal annealing. The devices show a high transconductance of 130 mS/mm and an electron saturation velocity of 1.8 x 10 7 cm/s. Channel mobilities measured at the complete device are as high as 6800 cm 2 /Vs. These excellent device properties are due to the use of an undoped InP buffer layer which avoids the diffusion of Fe from the substrate into the active layer. The data were supported by S-parameter measurements which gave a frequency limit of 20 GHz for gate dimensions of 1.6 by 200 μm 2 . (author)

  9. Electroless Ni-Mo-P diffusion barriers with Pd-activated self-assembled monolayer on SiO2

    International Nuclear Information System (INIS)

    Liu Dianlong; Yang Zhigang; Zhang Chi

    2010-01-01

    Ternary Ni-based amorphous films can serve as a diffusion barrier layer for Cu interconnects in ultralarge-scale integration (ULSI) applications. In this paper, electroless Ni-Mo-P films deposited on SiO 2 layer without sputtered seed layer were prepared by using Pd-activated self-assembled monolayer (SAM). The solutions and operating conditions for pretreatment and deposition were presented, and the formation of Pd-activated SAM was demonstrated by XPS (X-ray photoelectron spectroscopy) analysis and BSE (back-scattered electron) observation. The effects of the concentration of Na 2 MoO 4 added in electrolytes, pH value, and bath temperature on the surface morphology and compositions of Ni-Mo-P films were investigated. The microstructures, diffusion barrier property, electrical resistivity, and adhesion were also examined. Based on the experimental results, the Ni-Mo-P alloys produced by using Pd-activated SAM had an amorphous or amorphous-like structure, and possessed good performance as diffusion barrier layer.

  10. Efficient photocatalytic activity with carbon-doped SiO2 nanoparticles

    KAUST Repository

    Zhang, Dongen

    2013-01-01

    Photocatalysis provides a \\'green\\' approach to completely eliminate various kinds of contaminants that are fatal for current environmental and energy issues. Semiconductors are one of the most frequently used photocatalysts as they can absorb light over a wide spectral range. However, it is also well known that naked SiO2 is not an efficient photocatalyst due to its relatively large band gap, which could only absorb shortwave ultraviolet light. In this report, nanoscale particles of carbon-doped silicon dioxide (C-doped SiO2) for use in photocatalysis were successfully prepared by a facile one-pot thermal process using tetraethylorthosilicate (TEOS) as the source of both silicon and carbon. These particles were subsequently characterized by thermogravimetric analysis, X-ray diffraction, standard and high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The C-doped SiO2 displayed outstanding photocatalytic properties, as evidenced by its catalysis of Rhodamine B degradation under near-UV irradiation. We propose that carbon doping of the SiO2 lattice creates new energy states between the bottom of the conduction band and the top of the valence band, which narrows the band gap of the material. As a result, the C-doped SiO2 nanoparticles exhibit excellent photocatalytic activities in a neutral environment. The novel synthesis reported herein for this material is both energy efficient and environmentally friendly and as such shows promise as a technique for low-cost, readily scalable industrial production. © 2013 The Royal Society of Chemistry.

  11. A novel fabrication of a high performance SiO(2)-graphene oxide (GO) nanohybrids: Characterization of thermal properties of epoxy nanocomposites filled with SiO(2)-GO nanohybrids.

    Science.gov (United States)

    Haeri, S Z; Ramezanzadeh, B; Asghari, M

    2017-05-01

    In this study it has been aimed to enhance the thermal resistance of epoxy coating through incorporation of SiO 2 -GO nanohybrids. SiO 2 -GO nanohybrids were synthesized through one-step sol-gel route using a mixture of Tetraethylorthosilane (TEOS) and 3-Aminopropyl triethoxysilane (APTES) silanes. The SiO 2 -GO nanohybrids were prepared at various hydrolysis times of 24, 48 and 72h. Then 0.2wt.% of GO and SiO 2 -GO nanohybrids were separately incorporated into the epoxy coating. Results revealed that amino functionalized SiO 2 nanoparticles with particle size around 20-30nm successfully synthesized on the basal plane of GO. Results showed significant improvement of dispersion and interfacial interactions between nanohybrids and epoxy composite arising from covalent bonding between the SiO 2 -GO and the epoxy matrix. It was found that the thermal resistance of SiO 2 -GO nanohybrids and SiO 2 -GO/Epoxy nanocomposite was noticeably higher than GO and epoxy matrix, respectively. Copyright © 2017 Elsevier Inc. All rights reserved.

  12. Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

    OpenAIRE

    Pozina, Galia; Hemmingsson, Carl; Paskov, Plamen P.; Bergman, Peder; Monemar, Bo; Kawashima, T.; Amano, H.; Akasaki, I.; Usui, A.

    2008-01-01

    Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the halide vapor phase technique demonstrate metastability of the near-band-gap photoluminescence (PL). The acceptor bound exciton (ABE) line possibly related to the C acceptor vanishes in as-grown samples within a few minutes under UV laser illumination. Annealing activates the more stable Mg acceptors and passivates C acceptors. Consequently, only the ABE line related to Mg is dominant in PL spectra...

  13. Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition

    International Nuclear Information System (INIS)

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong; Wang, Hong; Ng, Serene Lay Geok; Ji, Rong; Liu, Zhi Hong

    2015-01-01

    The effect of post-deposition annealing on chemical bonding states at interface between Al 0.5 Ga 0.5 N and ZrO 2 grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 °C, which could be attributed to “clean up” effect of ALD-ZrO 2 on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle θ is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through “clean up” effect near the interface. However, degradation of ZrO 2 /AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 °C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO 2 /AlGaN interface are easier to get oxidized as compared with Ga atoms

  14. Investigation of humidity-dependent nanotribology behaviors of Si(1 0 0)/SiO2 pair moving from stick to slip

    International Nuclear Information System (INIS)

    Yu Jiaxin; Chen Lei; Qian Linmao; Song Danlu; Cai Yong

    2013-01-01

    Highlights: ► The effect of humidity on the motion behavior of Si(1 0 0)/SiO 2 pair was clarified. ► With increase in humidity, adhesion force increases slowly firstly, then sharply. ► With increase in humidity, friction force increases sharply firstly, then slowly. ► The wear degree of Si is relative to the physical state of absorbed water film. ► The tribochemical reaction of Si(1 0 0) in humid air was verified by ToF-SIMS. - Abstract: With an atomic force microscopy, the humidity-dependent nanotribology behaviors of Si(1 0 0) against SiO 2 microsphere were investigated while the relative movement translated from stick to slip. The relative humidity RH of air exhibits a strong effect on the motion behavior of Si(1 0 0)/SiO 2 pair. With the increase in RH, relative movement of Si(1 0 0)/SiO 2 pair is easier to keep into stick state, namely, the relative slip becomes more difficult to occur in a higher humidity range. The adhesion F a will increase with the increase in RH in the given humidity range. In the low RH range ( a increases very slowly. However, in relative higher RH range (>20%), F a increases very sharply once ‘liquid-like’ adsorbed water layer forms, because it increases the capillary force. The initial friction forces F t of Si(1 0 0)/SiO 2 pair also increase with the increase in RH in the given humidity range. However, different from F a , it increases sharply in the low RH range ( 30%). During the cyclic friction process, under the higher RH, relative stable tangential force is easier to be observed at higher displacement amplitude, here, the relative movement usually keeps into stick state. With the increase in RH, the surface damage of Si(1 0 0) transforms from mechanical deformation (forming hillock) to tribochemical wear (material removal). The tribochemical wear is sensitive to the absorbed water film with ‘solid-like’ structure, here, the wear volume increases drastically in this RH range (<20%); further increase of wear is

  15. Bending strength of glass-ceramics based on 3CaO.P2O5-SiO2-MgO glass system

    International Nuclear Information System (INIS)

    Daguano, J.K.M.F.; Suzuki, P.A.; Santos, C.; Fernandes, M.H.V.; Elias, C.N.

    2009-01-01

    In this work, the Modulus of Rupture of bioactive glass-ceramic based on 3CaO.P 2 O 5 -SiO 2 -MgO system was investigated, aiming its use in bone-restorations. The mechanical property was correlated with microstructural and crystallographic features of this material. High-purity starting-powders, CaCO 3 , SiO 2 , MgO, Ca (H 2 PO 4 ).H 2 O, were used in this study. The powders were mixed in a stoichiometric ratio, using planetary ball-mill. The suspensions were dried, sieved and melted at 1600 deg C, for 4h. The casting ones were cooled quickly until annealing temperature 700 deg C, in which remained for 2h, with controlled cooling-rate until ambient temperature. Bulks of glass were heat-treated with temperatures varying between 700 deg C and 1100 deg C, for 4h, being after that, cooled at 3 deg C/min. Bioactive glass and glass-ceramic were characterized by HRXRD (high resolution X-ray diffraction), where whitlockite was main phase. The microstructure was analyzed by scanning electronic microscopy. Modulus of Rupture was determined by four-point bending testing using specimens of 1.5 x 2 x 25 mm and glasses presented strength near to 70MPa, while glass ceramics treated at 975 deg C-4h, presented bending strength of 120MPa. (author)

  16. Analysis of thermal detrapping of holes created by electron irradiation in high purity amorphous SiO_2 using the induced and secondary current measurements

    International Nuclear Information System (INIS)

    Said, K.; Moya, G.; Si Ahmed, A.; Damamme, G.; Kallel, A.

    2016-01-01

    Graphical abstract: - Highlights: • Positive charging of high purity amorphous SiO_2 achieved by electron irradiation in a specially equipped scanning electron microscope. • Quantity of detrapped holes evaluated via measurements of induced and secondary electron currents. • Study of isothermal detrapping for different temperatures (300–663 K). • Analysis of the hole detrapping via a first order kinetics. • Evaluation of the hole detrapping parameters (activation energy and frequency factor). - Abstract: Isothermal detrapping of holes after electron irradiation (using a SEM) in high purity amorphous SiO_2 is evaluated at different temperatures (in the range 300–663 K) by means of the induced and secondary current measurements. In order to single out the hole detrapping, the specific charging conditions (1 keV defocused electron beam of low density) leading to positive charging are adopted. The thermal detrapping, which stems from a single trap, begins at 523 K and is completed at 663 K. After annealing in air at 973 K during 48 h, two detrapping stages are revealed: the former is connected with an additional shallow trap, while the latter requires temperatures above 663 K for a complete detrapping. The first order kinetics describes reasonably well the detrapping process. The frequency factors (near 10"1"0 s"−"1) and the activation energies (about 1.6 eV) deduced from this analysis could be assigned, respectively, to the relaxation connected to detrapping and to the trap energy level of the charged oxygen vacancy.

  17. In situ study of interface reactions of ion beam sputter deposited (Ba0.5Sr0.5)TiO3 films on Si, SiO2, and Ir

    International Nuclear Information System (INIS)

    Gao, Y.; Mueller, A.H.; Irene, E.A.; Auciello, O.; Krauss, A.; Schultz, J.A.

    1999-01-01

    (Ba 0.5 ,Sr 0.5 )TiO 3 (BST) thin films were deposited on MgO, Si, SiO 2 and Ir surfaces by ion beam sputter deposition in oxygen at 700 degree C. In situ spectroscopic ellipsometry (SE) has been used to investigate the evolution of the BST films on different surfaces during both deposition and postannealing processes. First, the optical constants of the BST films in the photon energy range of 1.5 - 4.5 eV were determined by SE analysis on crystallized BST films deposited on MgO single crystal substrates. The interfaces in BST/Si and BST/SiO 2 /Si structure were examined by SE and Auger electron spectroscopy depth profiles. Subcutaneous oxidation in the BST/Ir structure was observed by in situ SE during both ion beam sputter deposition and postdeposition annealing in oxygen at 700 degree C. A study of the thermal stability of the Ir/TiN/SiO 2 /Si structure in oxygen at 700 degree C was carried out using in situ SE. The oxidation of Ir was confirmed by x-ray diffraction. The surface composition and morphology evolution after oxidation were investigated by time of flight mass spectroscopy of recoiled ions (TOF-MSRI) and atomic force microscopy. It has been found that Ti from the underlying TiN barrier layer diffused through the Ir layer onto the surface and thereupon became oxidized. It was also shown that the surface roughness increases with increasing oxidation time. The implications of the instability of Ir/TiN/SiO 2 /Si structure on the performance of capacitor devices based on this substrate are discussed. It has been shown that a combination of in situ SE and TOF-MSRI provides a powerful methodology for in situ monitoring of complex oxide film growth and postannealing processes. copyright 1999 American Vacuum Society

  18. Ethanol-to-Butadiene Conversion over SiO2-MgO Catalysts: Synthesis-Structure-Performance Relationships

    NARCIS (Netherlands)

    Angelici, C.

    2015-01-01

    The work presented in this PhD Thesis provides new insights into the underlying reasons that make SiO2-MgO materials excellent catalysts for the ethanol-to-butadiene Lebedev process. In particular, the preparation technique of choice affects the structural properties of the resulting SiO2-MgO

  19. Sensitizing effects of ZnO quantum dots on red-emitting Pr3+-doped SiO2 phosphor

    CSIR Research Space (South Africa)

    Mbule, PS

    2012-05-01

    Full Text Available In this study, red cathodoluminescence (CL) ( emission=614 nm) was observed from Pr3+ ions in a glassy (amorphous) SiO2 host. This emission was enhanced considerably when ZnO quantum dots (QDs) were incorporated in the SiO2:Pr3+ suggesting...

  20. Preparation of Raspberry-like Superhydrophobic SiO2 Particles by Sol-gel Method and Its Potential Applications

    Directory of Open Access Journals (Sweden)

    Xu Gui-Long

    2011-12-01

    Full Text Available Raspberry‐like SiO2 particles with a nano‐micro‐binary structure were prepared by a simple sol‐gel method using tetraethoxysilane (TEOS and methyltriethoxysilane (MTES as precursors. The chemical components and morphology of the SiO2 particles were characterized by Fourier transform infrared spectroscopy (FT‐IR and a Transmission electron microscope (TEM. The surface topography and wetting behaviour of the raspberry‐like SiO2 surface were observed with a Scanning electron microscope (SEM and studied by the water/oil contact angle (CA, respectively. The thermal stability of the prepared SiO2 particles was characterized by TGA analysis. The results show that the highly dispersed SiO2 particles initially prepared by the sol‐gel method turn into raspberry‐like particles with during the aging process. The raspberry‐like SiO2 particles show superhydrophobicity and superoleophilicity across a wide range of pH values. The SiO2 particles were thermally stable up to 475°C, while above this temperature the hydrophobicity decreases and finally becomes superhydrophobic when the temperature reaches 600°C. The raspberry‐like SiO2 particles which were prepared have potential applications in the fields of superhydrophobic surfaces, water‐oil separation, anti‐corrosion and fluid transportation.

  1. The electrorheological properties of nano-sized SiO2 particle materials doped with rare earths

    International Nuclear Information System (INIS)

    Liu Yang; Liao Fuhui; Li Junran; Zhang Shaohua; Chen Shumei; Wei Chenguan; Gao Song

    2006-01-01

    Electrorheological (ER) materials of pure SiO 2 and SiO 2 doped with rare earths (RE = Ce, Gd, Y) (non-metallic glasses (silicates)) were prepared using Na 2 SiO 3 and RECl 3 as starting materials. The electrorheological properties are not enhanced by all rare earth additions. The material doped with Ce exhibits the best ER performance

  2. Band alignments and improved leakage properties of (La2O3)0.5(SiO2)0.5/SiO2/GaN stacks for high-temperature metal-oxide-semiconductor field-effect transistor applications

    Science.gov (United States)

    Gao, L. G.; Xu, B.; Guo, H. X.; Xia, Y. D.; Yin, J.; Liu, Z. G.

    2009-06-01

    The band alignments of (La2O3)0.5(SiO2)0.5(LSO)/GaN and LSO/SiO2/GaN gate dielectric stacks were investigated comparatively by using x-ray photoelectron spectroscopy. The valence band offsets for LSO/GaN stack and LSO/SiO2/GaN stack are 0.88 and 1.69 eV, respectively, while the corresponding conduction band offsets are found to be 1.40 and 1.83 eV, respectively. Measurements of the leakage current density as function of temperature revealed that the LSO/SiO2/GaN stack has much lower leakage current density than that of the LSO/GaN stack, especially at high temperature. It is concluded that the presence of a SiO2 buffer layer increases band offsets and reduces the leakage current density effectively.

  3. The effect of annealing atmosphere on magnetoelectric coupling of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BaTiO{sub 3} layered heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Li, Tingxian, E-mail: wxlltx@126.com [College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455002 (China); Wang, Hongwei [School of Mathematics and Statistics, Anyang Normal University, Anyang 455002 (China); Ju, Lin; Tang, Zhenjie; Ma, Dongwei [College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455002 (China); Li, Kuoshe [National Engineering Research Central for Rare earth Materials, Beijing 100088 (China)

    2015-10-15

    The epitaxial La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/BaTiO{sub 3} (LSMO/BTO) layered heterostructure was grown on (001) oriented LaAlO{sub 3} single-crystal substrate by pulsed laser deposition. Our results showed that the in-situ annealing process in oxygen made the LSMO/BTO interface possess higher oxygen content than that of the one annealing in vacuum, which leaded to the LSMO film presented higher magnetic permeability and higher saturated magnetization. The P–E hystersis loop only could be detected in the sample annealing in oxygen. The ME voltage coefficient of the LSMO/BTO heterostructure annealing in oxygen was higher than that of the one annealing in vacuum, which suggested a more effective ME coupling. It was a combined effect of the two main ME coupling mechanisms, including strain mediation, and polarized carrier mediation.

  4. Self-assembling siloxane bilayer directly on SiO2 surface of micro-cantilevers for long-term highly repeatable sensing to trace explosives.

    Science.gov (United States)

    Chen, Ying; Xu, Pengcheng; Li, Xinxin

    2010-07-02

    This paper presents a novel sensing layer modification technique for static micro-cantilever sensors that detect trace explosives by measuring specific adsorption-induced surface stress. For the first time, a method of directly modifying a siloxane sensing bilayer on an SiO(2) surface is proposed to replace the conventional self-assembled monolayers (SAMs) of thiols on Au to avoid the trouble from long-term unstable Au-S bonds. For modifying the long-term reliable sensing bilayer on the piezoresistor-integrated micro-cantilevers, a siloxane-head bottom layer is self-assembled directly on the SiO(2) cantilever surface, which is followed by grafting another explosive-sensing-group functionalized molecule layer on top of the siloxane layer. The siloxane-modified sensor has experimentally exhibited a highly resoluble response to 0.1 ppb TNT vapor. More importantly, the repeated detection results after 140 days show no obvious attenuation in sensing signal. Also observed experimentally, the specific adsorption of the siloxane sensing bilayer to TNT molecules causes a tensile surface stress on the cantilever. Herein the measured tensile surface stress is in contrast to the compressive surface stress normally measured from conventional cantilever sensors where the sensitive thiol-SAMs are modified on an Au surface. The reason for this newly observed phenomenon is discussed and preliminarily analyzed.

  5. Self-assembling siloxane bilayer directly on SiO2 surface of micro-cantilevers for long-term highly repeatable sensing to trace explosives

    International Nuclear Information System (INIS)

    Chen Ying; Xu Pengcheng; Li Xinxin

    2010-01-01

    This paper presents a novel sensing layer modification technique for static micro-cantilever sensors that detect trace explosives by measuring specific adsorption-induced surface stress. For the first time, a method of directly modifying a siloxane sensing bilayer on an SiO 2 surface is proposed to replace the conventional self-assembled monolayers (SAMs) of thiols on Au to avoid the trouble from long-term unstable Au-S bonds. For modifying the long-term reliable sensing bilayer on the piezoresistor-integrated micro-cantilevers, a siloxane-head bottom layer is self-assembled directly on the SiO 2 cantilever surface, which is followed by grafting another explosive-sensing-group functionalized molecule layer on top of the siloxane layer. The siloxane-modified sensor has experimentally exhibited a highly resoluble response to 0.1 ppb TNT vapor. More importantly, the repeated detection results after 140 days show no obvious attenuation in sensing signal. Also observed experimentally, the specific adsorption of the siloxane sensing bilayer to TNT molecules causes a tensile surface stress on the cantilever. Herein the measured tensile surface stress is in contrast to the compressive surface stress normally measured from conventional cantilever sensors where the sensitive thiol-SAMs are modified on an Au surface. The reason for this newly observed phenomenon is discussed and preliminarily analyzed.

  6. Compositional dependence of absorption coefficient and band-gap for Nb2O5-SiO2 mixture thin films

    International Nuclear Information System (INIS)

    Sancho-Parramon, Jordi; Janicki, Vesna; Zorc, Hrvoje

    2008-01-01

    The absorption coefficient of composite films consisting of niobia (Nb 2 O 5 ) and silica (SiO 2 ) mixtures is studied for photon energies around the band gap. The films were deposited by co-evaporation and their composition was varied by changing the ratio of deposition rates of the two materials. Both, as-deposited and thermally annealed films were characterized by different techniques: the absorption coefficient was determined by spectrophotometric measurements and the structural properties were investigated using infrared spectroscopy, transmission electron microscopy and X-ray diffraction. The correlation between the variations of absorption properties and film composition and structure is established. The absorption coefficients determined experimentally are compared with the results derived from effective medium theories in order to evaluate the suitability of these theories for the studied composites

  7. Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations

    Science.gov (United States)

    Zeng, Ke; Singisetti, Uttam

    2017-09-01

    The interface trap density (Dit) of the SiO2/β-Ga2O3 interface in ( 2 ¯ 01), (010), and (001) orientations is obtained by the Hi-Lo method with the low frequency capacitance measured using the Quasi-Static Capacitance-Voltage (QSCV) technique. QSCV measurements are carried out at higher temperatures to increase the measured energy range of Dit in the bandgap. At room temperature, higher Dit is observed near the band edge for all three orientations. The measurement at higher temperatures led to an annealing effect that reduced the Dit value for all samples. Comparison with the conductance method and frequency dispersion of the capacitance suggests that the traps at the band edge are slow traps which respond to low frequency signals.

  8. Influence of core size on the upconversion luminescence properties of spherical Gd2O3:Yb3+/Er3+@SiO2 particles with core-shell structures

    International Nuclear Information System (INIS)

    Zheng, Kezhi; Liu, Zhenyu; Liu, Ye; Song, Weiye; Qin, Weiping

    2013-01-01

    Spherical SiO 2 particles with different sizes (30, 80, 120, and 180 nm) have been coated with Gd 2 O 3 :Yb 3+ /Er 3+ layers by a heterogeneous precipitation method, leading to the formation of core-shell structural Gd 2 O 3 :Yb 3+ /Er 3+ @SiO 2 particles. The samples were characterized by using X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, upconversion (UC) emission spectra, and fluorescent dynamical analysis. The obtained core-shell particles have perfect spherical shape with narrow size distribution. Under the excitation of 980 nm diode laser, the core-shell samples showed size-dependent upconversion luminescence (UCL) properties. The inner SiO 2 cores in core-shell samples were proved to have limited effect on the total UCL intensities of Er 3+ ions. The UCL intensities of core-shell particles were demonstrated much higher than the values obtained in pure Gd 2 O 3 :Yb 3+ /Er 3+ with the same phosphor volume. The dependence of the specific area of a UCL shell on the size of its inner SiO 2 particle was calculated and analyzed for the first time. It was confirmed that the surface effect came from the outer surfaces of emitting shells is dominant in influencing the UCL property in the core-shell samples. Three-photon UC processes for the green emissions were observed in the samples with small sizes of SiO 2 cores. The results of dynamical analysis illustrated that more nonradiative relaxation occurred in the core-shell samples with smaller SiO 2 core sizes

  9. New intelligent multifunctional SiO2/VO2 composite films with enhanced infrared light regulation performance, solar modulation capability, and superhydrophobicity.

    Science.gov (United States)

    Wang, Chao; Zhao, Li; Liang, Zihui; Dong, Binghai; Wan, Li; Wang, Shimin

    2017-01-01

    Highly transparent, energy-saving, and superhydrophobic nanostructured SiO 2 /VO 2 composite films have been fabricated using a sol-gel method. These composite films are composed of an underlying infrared (IR)-regulating VO 2 layer and a top protective layer that consists of SiO 2 nanoparticles. Experimental results showed that the composite structure could enhance the IR light regulation performance, solar modulation capability, and hydrophobicity of the pristine VO 2 layer. The transmittance of the composite films in visible region ( T lum ) was higher than 60%, which was sufficient to meet the requirements of glass lighting. Compared with pristine VO 2 films and tungsten-doped VO 2 film, the near IR control capability of the composite films was enhanced by 13.9% and 22.1%, respectively, whereas their solar modulation capability was enhanced by 10.9% and 22.9%, respectively. The water contact angles of the SiO 2 /VO 2 composite films were over 150°, indicating superhydrophobicity. The transparent superhydrophobic surface exhibited a high stability toward illumination as all the films retained their initial superhydrophobicity even after exposure to 365 nm light with an intensity of 160 mW . cm -2 for 10 h. In addition, the films possessed anti-oxidation and anti-acid properties. These characteristics are highly advantageous for intelligent windows or solar cell applications, given that they can provide surfaces with anti-fogging, rainproofing, and self-cleaning effects. Our technique offers a simple and low-cost solution to the development of stable and visible light transparent superhydrophobic surfaces for industrial applications.

  10. High temperature annealing of sprayed SnO{sub 2}: F layers in a silicon solar cell process with screen-printed contacts

    Energy Technology Data Exchange (ETDEWEB)

    Tala-Ighil, R.; Boumaour, M.; Maallemi, A.; Melhani, K. [Laboratoire des Cellules Photovoltaiques, Unite de Developpement de la Technologie du Silicium ? UDTS, 2 Bd, F. Fanon, BP 399 Alger-Gare, Alger (Algerie); Belkaid, M.S. [Laboratoire de Microelectronique Appliquee, Universite Mouloud Mammeri, BP 453 Tizi-Ouzou (Algerie); Iratni, A. [Laboratoire des mineraux et materiaux composites, LMMC, Universite Mhamed Bougerra, Avenue de l' independance, 35000 Boumerdes (Algerie)

    2006-07-24

    In order to improve the solar cell conversion efficiency, a thin film of doped tin oxide (SnO{sub 2}: F) has been deposited by the spray-pyrolysis technique on a monocrystalline diffused silicon wafer. Subsequently, the layer must undergo the firing step of screen-printed contacts with temperatures up to 830{sup o}C. After annealing, one notices with the naked eye the appearance of speckles disturbing the uniformity of the as-deposited blue-coloured SnO{sub 2}:F. Characterizations such as XPS, FTIR, RBS, XRD, SEM, Hall Effect, four point probe...etc, are all consistent to reveal a net increase of the SnO{sub 2}:F layer resistivity which leads to efficiency degradation. Annealing the thin films under CO and 90% N{sub 2}-10% H{sub 2} atmospheres was investigated to seek possibilities to preserve the expected improvements. Unlike forming gas, CO reducing ambient was found to be very effective for the high temperature contact firing with no thin film conductivity deterioration. (author)

  11. Proof of concept of an epitaxy-free layer-transfer process for silicon solar cells based on the reorganisation of macropores upon annealing

    International Nuclear Information System (INIS)

    Depauw, V.; Gordon, I.; Beaucarne, G.; Poortmans, J.; Mertens, R.; Celis, J.-P.

    2009-01-01

    To answer the challenge of less expensive renewable electricity, the photovoltaics community is focusing on producing thinner silicon solar cells. A few years ago, in the field of silicon-on-nothing structures, micron-thick monocrystalline layers suspended over their parent wafer were produced by high-temperature annealing of specific arrays of macropores. Those macropores reorganise into one single void and leave a thin overlayer on top. Since this method may be an inexpensive way of fabricating high-quality silicon films, this paper investigates its potential for photovoltaic applications. In particular, we investigated if large surfaces can be produced and transferred to foreign substrates with this method. We fabricated basic solar cells, without rear-surface passivation, on 5 cm x 5 cm-large and 1-μm-thick films transferred to glass, that showed energy-conversion efficiencies up to 2.6%. These cells demonstrate the feasibility of the presented concept as a layer-transfer process for solar-cell application. After formation by annealing, the film is only barely attached to its parent wafer, but can still safely be handled provided that any abrupt gas flow or pumping to vacuum is avoided. After transfer and permanent bonding, the sample can be handled as any bulk wafer.

  12. Decreased Charge Transport Barrier and Recombination of Organic Solar Cells by Constructing Interfacial Nanojunction with Annealing-Free ZnO and Al Layers.

    Science.gov (United States)

    Liu, Chunyu; Zhang, Dezhong; Li, Zhiqi; Zhang, Xinyuan; Guo, Wenbin; Zhang, Liu; Ruan, Shengping; Long, Yongbing

    2017-07-05

    To overcome drawbacks of the electron transport layer, such as complex surface defects and unmatched energy levels, we successfully employed a smart semiconductor-metal interfacial nanojunciton in organic solar cells by evaporating an ultrathin Al interlayer onto annealing-free ZnO electron transport layer, resulting in a high fill factor of 73.68% and power conversion efficiency of 9.81%. The construction of ZnO-Al nanojunction could effectively fill the surface defects of ZnO and reduce its work function because of the electron transfer from Al to ZnO by Fermi level equilibrium. The filling of surface defects decreased the interfacial carrier recombination in midgap trap states. The reduced surface work function of ZnO-Al remodulated the interfacial characteristics between ZnO and [6,6]-phenyl C71-butyric acid methyl ester (PC 71 BM), decreasing or even eliminating the interfacial barrier against the electron transport, which is beneficial to improve the electron extraction capacity. The filled surface defects and reduced interfacial barrier were realistically observed by photoluminescence measurements of ZnO film and the performance of electron injection devices, respectively. This work provides a simple and effective method to simultaneously solve the problems of surface defects and unmatched energy level for the annealing-free ZnO or other metal oxide semiconductors, paving a way for the future popularization in photovoltaic devices.

  13. Synthesis of Hollow Nanotubes of Zn2SiO4 or SiO2: Mechanistic Understanding and Uranium Adsorption Behavior.

    Science.gov (United States)

    Tripathi, Shalini; Bose, Roopa; Roy, Ahin; Nair, Sajitha; Ravishankar, N

    2015-12-09

    We report a facile synthesis of Zn2SiO4 nanotubes using a two-step process consisting of a wet-chemical synthesis of core-shell ZnO@SiO2 nanorods followed by thermal annealing. While annealing in air leads to the formation of hollow Zn2SiO4, annealing under reducing atmosphere leads to the formation of SiO2 nanotubes. We rationalize the formation of the silicate phase at temperatures much lower than the temperatures reported in the literature based on the porous nature of the silica shell on the ZnO nanorods. We present results from in situ transmission electron microscopy experiments to clearly show void nucleation at the interface between ZnO and the silica shell and the growth of the silicate phase by the Kirkendall effect. The porous nature of the silica shell is also responsible for the etching of the ZnO leading to the formation of silica nanotubes under reducing conditions. Both the hollow silica and silicate nanotubes exhibit good uranium sorption at different ranges of pH making them possible candidates for nuclear waste management.

  14. Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2

    International Nuclear Information System (INIS)

    Avella, M.; Prieto, A.C.; Jimenez, J.; Rodriguez, A.; Sangrador, J.; Rodriguez, T.; Ortiz, M.I.; Ballesteros, C.

    2008-01-01

    Multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and SiO 2 onto Si wafers (in a single run at 390 deg. C and 50 mTorr, using GeH 4 , Si 2 H 6 and O 2 ) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photoluminescence experiments at 80 K and also at room temperature. The annealing conditions (temperatures ranging from 700 to 1000 deg. C and for times of 30 and 60 s) have been investigated in samples with different diameter of the nanoparticles (from ∼3 to ≥5 nm) and oxide interlayer thickness (15 and 35 nm) in order to establish a correlation between the crystallization of the nanoparticles, the degradation of their composition by Ge diffusion and the intensity of the luminescence emission band. Structures with small nanoparticles (3-4.5 nm) separated by thick oxide barriers (∼35 nm) annealed at 900 deg. C for 60 s yield the maximum intensity of the luminescence. An additional treatment at 450 deg. C in forming gas for dangling-bond passivation increases the intensity of the luminescence band by 25-30%

  15. Monitoring the doping of graphene on SiO2/Si substrates during the thermal annealing process

    Czech Academy of Sciences Publication Activity Database

    da Costa, Sara; Ek Weis, Johan; Frank, Otakar; Fridrichová, Michaela; Kalbáč, Martin

    2016-01-01

    Roč. 6, JUL 2016 (2016), s. 72859-72864 ISSN 2046-2069 R&D Projects: GA MŠk LL1301 Institutional support: RVO:61388955 Keywords : heating * graphene * Raman spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.108, year: 2016

  16. Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

    International Nuclear Information System (INIS)

    Brillson, L. J.; Young, A. P.; White, B. D.; Schaefer, J.; Niimi, H.; Lee, Y. M.; Lucovsky, G.

    2000-01-01

    Low-energy electron-excited nanoluminescence spectroscopy reveals depth-resolved optical emission associated with traps near the interface between ultrathin SiO 2 deposited by plasma-enhanced chemical vapor deposition on plasma-oxidized crystalline Si. These near-interface states exhibit a strong dependence on local chemical bonding changes introduced by thermal/gas processing, layer-specific nitridation, or depth-dependent radiation exposure. The depth-dependent results provide a means to test chemical and structural bond models used to develop advanced dielectric-semiconductor junctions. (c) 2000 American Vacuum Society

  17. Refractories in the Al2O3-ZrO2-SiO2 system

    International Nuclear Information System (INIS)

    Banerjee, S.P.; Bhadra, A.K.; Sircar, N.R.

    1978-01-01

    The effect of addition of ZrO 2 in different proportions in the refractories of the Al 2 O 3 -SiO 2 system was studied. The investigation was confined to two broad ranges of compositions incorporating zirconia (15-30 percent and 80-85 percent) in the Al 2 O 3 -ZrO 2 -SiO 2 system. The overall attainment of properties is dependent upon the mode of fabrication and firing, and bears a relationship with the phase assemblages and the relative proportion thereof. Of the different characteristics, the trend of dissociation of zircon has been found to be specially significant vis-a-vis the temperature of firing and thermal shock resistance. Reassociation of the dissociated products has been ascribed to bring forth improved resistance to thermal spalling. The different products developed during this investigation are considered to be very promising which find useful applications in view of the properties attained by them. (auth.)

  18. Electron irradiation response on Ge and Al-doped SiO 2 optical fibres

    Science.gov (United States)

    Yaakob, N. H.; Wagiran, H.; Hossain, I.; Ramli, A. T.; Bradley, D. A.; Hashim, S.; Ali, H.

    2011-05-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  19. Formation of nucleoplasmic protein aggregates impairs nuclear function in response to SiO2 nanoparticles

    International Nuclear Information System (INIS)

    Chen Min; Mikecz, Anna von

    2005-01-01

    Despite of their exponentially growing use, little is known about cell biological effects of nanoparticles. Here, we report uptake of silica (SiO 2 ) nanoparticles to the cell nucleus where they induce aberrant clusters of topoisomerase I (topo I) in the nucleoplasm that additionally contain signature proteins of nuclear domains, and protein aggregation such as ubiquitin, proteasomes, cellular glutamine repeat (polyQ) proteins, and huntingtin. Formation of intranuclear protein aggregates (1) inhibits replication, transcription, and cell proliferation; (2) does not significantly alter proteasomal activity or cell viability; and (3) is reversible by Congo red and trehalose. Since SiO 2 nanoparticles trigger a subnuclear pathology resembling the one occurring in expanded polyglutamine neurodegenerative disorders, we suggest that integrity of the functional architecture of the cell nucleus should be used as a read out for cytotoxicity and considered in the development of safe nanotechnology

  20. Fourier transform infrared spectroscopic study of gamma irradiated SiO2 nanoparticles

    Science.gov (United States)

    Huseynov, Elchin; Garibov, Adil; Mehdiyeva, Ravan; Huseynova, Efsane

    2018-03-01

    In the present work, nano SiO2 particles are investigated before and after gamma irradiation (25, 50, 75, 100 and 200 kGy) using Fourier transform infrared (FTIR) spectroscopy method for the wavenumber between 400-4000 cm-1. It is found that as a result of spectroscopic analysis, five new peaks have appeared after gamma radiation. Two of new obtained peaks (which are located at 687 cm-1 and 2357 cm-1 of wavenumber) were formed as a result of gamma radiation interaction with Si-O bonds. Another three new peaks (peaks appropriate to 941, 2052 and 2357 cm-1 values of wavenumber) appear as a result of interaction of water with nano SiO2 particles after gamma irradiation. It has been defined as asymmetrical bending vibration, symmetrical bending vibration, symmetrical stretching vibration and asymmetrical stretching vibration of Si-O bonds appropriate to peaks.

  1. Electron irradiation response on Ge and Al-doped SiO2 optical fibres

    International Nuclear Information System (INIS)

    Yaakob, N.H.; Wagiran, H.; Hossain, I.; Ramli, A.T.; Bradley, D.A; Hashim, S.; Ali, H.

    2011-01-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  2. Microwave absorption properties and mechanism of cagelike ZnO /SiO2 nanocomposites

    Science.gov (United States)

    Cao, Mao-Sheng; Shi, Xiao-Ling; Fang, Xiao-Yong; Jin, Hai-Bo; Hou, Zhi-Ling; Zhou, Wei; Chen, Yu-Jin

    2007-11-01

    In this paper, cagelike ZnO /SiO2 nanocomposites were prepared and their microwave absorption properties were investigated in detail. Dielectric constants and losses of the pure cagelike ZnO nanostructures were measured in a frequency range of 8.2-12.4GHz. The measured results indicate that the cagelike ZnO nanostructures are low-loss material for microwave absorption in X band. However, the cagelike ZnO /SiO2 nanocomposites exhibit a relatively strong attenuation to microwave in X band. Such strong absorption is related to the unique geometrical morphology of the cagelike ZnO nanostructures in the composites. The microcurrent network can be produced in the cagelike ZnO nanostructures, which contributes to the conductive loss.

  3. Density gradient in SiO 2 films on silicon as revealed by positron annihilation spectroscopy

    Science.gov (United States)

    Revesz, A. G.; Anwand, W.; Brauer, G.; Hughes, H. L.; Skorupa, W.

    2002-06-01

    Positron annihilation spectroscopy of thermally grown and deposited SiO 2 films on silicon shows in a non-destructive manner that these films have a gradient in their density. The gradient is most pronounced for the oxide grown in dry oxygen. Oxidation in water-containing ambient results in an oxide with reduced gradient, similarly to the gradient in the deposited oxide. These observations are in accordance with earlier optical and other studies using stepwise etching or a set of samples of varying thickness. The effective oxygen charge, which is very likely one of the reasons for the difference in the W parameters of silica glass and quartz crystal, could be even higher at some localized configurations in the SiO 2 films resulting in increased positron trapping.

  4. A novel growth mode of alkane films on a SiO2 surface

    DEFF Research Database (Denmark)

    Mo, H.; Taub, H.; Volkmann, U.G.

    2003-01-01

    on the SiO2 surface with the long-axis of the C32 molecules oriented parallel to the interface followed by a C32 monolayer with the long-axis perpendicular to it. Finally, preferentially oriented bulk particles nucleate having two different crystal structures. This growth model differs from that found...... previously for shorter alkanes deposited from the vapor phase onto solid surfaces....

  5. Effect of SiO2 Overlayer on WO3 Sensitivity to Ammonia

    Directory of Open Access Journals (Sweden)

    Vibha Srivastava

    2010-06-01

    Full Text Available Ammonia gas sensing properties of tungsten trioxide thick film sensor was investigated. The doping of noble catalysts such as Pt, Pd, Au enhanced the gas sensitivity. Platinum doping was found to result in highest sensitivity. Remarkable sensitivity enhancement was realized by coating WO3 thick film sensors with SiO2 overlayer. Sol gel process derived silica overlayer increased ammonia gas sensitivity for doped as well as undoped sensor.

  6. Microstructural properties of non-supported microporous ceramic membrane top-layers obtained by the sol-gel process

    NARCIS (Netherlands)

    de Lange, Rob; de Lange, R.S.A.; Hekkink, J.H.A.; Hekkink, J.H.A.; Keizer, Klaas; Burggraaf, Anthonie; Burggraaf, A.J.

    1996-01-01

    Dried and calcined non-supported membrane top-layers of SiO2, SiO2/TiO2, SiO2/ZrO2 (10, 20 and 30 mol% TiO2 and ZrO2, respectively) and SiO2/Al2O3 (10 mol% AlO1.5) were prepared using acid catalyzed hydrolysis and condensation of alkoxides in ethanol. The microstructure was determined using nitrogen

  7. Effects of four step sintering on Y2O3: SiO2 nanocomposite

    International Nuclear Information System (INIS)

    Ahlawat, Rachna

    2015-01-01

    Need for high performance materials for advanced applications have led to the development of new concepts in materials design processing and their fabrication. The development of nanocrystalline materials with improved and novel properties is an important turning point in materials research. In present work, we report synthesis and structural characterization of Y 2 O 3 : SiO 2 nanocomposite. Sol-gel technique is being used to prepare-Y 2 O 3 SiO 2 nanocomposite due to its effectiveness in preparing samples with good mixing of starting materials and at relatively low reaction temperature. We have used Y(NO 3 ) 3 .4H 2 O and TEOS as precursors and followed usual approach of sol-gel technique, the final product of Y 2 O 3 : SiO 2 nanocomposite is obtained in the form of powder. The powder samples were sintered at different temperature for different time durations in programmable muffle furnace. The samples were characterized by complementary techniques as X-Ray Diffraction (XRD), Fourier Transforms Infrared Spectroscopy (FTIR) and Transmission Electron Microscopy (TEM). (author)

  8. Impact of SiO2 on Al–Al thermocompression wafer bonding

    International Nuclear Information System (INIS)

    Malik, Nishant; Finstad, Terje G; Schjølberg-Henriksen, Kari; Poppe, Erik U; Taklo, Maaike M V

    2015-01-01

    Al–Al thermocompression bonding suitable for wafer level sealing of MEMS devices has been investigated. This paper presents a comparison of thermocompression bonding of Al films deposited on Si with and without a thermal oxide (SiO 2 film). Laminates of diameter 150 mm containing device sealing frames of width 200 µm were realized. The wafers were bonded by applying a bond force of 36 or 60 kN at bonding temperatures ranging from 300–550 °C for bonding times of 15, 30 or 60 min. The effects of these process variations on the quality of the bonded laminates have been studied. The bond quality was estimated by measurements of dicing yield, tensile strength, amount of cohesive fracture in Si and interfacial characterization. The mean bond strength of the tested structures ranged from 18–61 MPa. The laminates with an SiO 2 film had higher dicing yield and bond strength than the laminates without SiO 2 for a 400 °C bonding temperature. The bond strength increased with increasing bonding temperature and bond force. The laminates bonded for 30 and 60 min at 400 °C and 60 kN had similar bond strength and amount of cohesive fracture in the bulk silicon, while the laminates bonded for 15 min had significantly lower bond strength and amount of cohesive fracture in the bulk silicon. (paper)

  9. Surface Modification of SiO2 Microchannels with Biocompatible Polymer Using Supercritical Carbon Dioxide

    Science.gov (United States)

    Saito, Tatsuro; Momose, Takeshi; Hoshi, Toru; Takai, Madoka; Ishihara, Kazuhiko; Shimogaki, Yukihiro

    2010-11-01

    The surface of 500-mm-long microchannels in SiO2 microchips was modified using supercritical CO2 (scCO2) and a biocompatible polymer was coated on it to confer biocompatibility to the SiO2 surface. In this method, the SiO2 surface of a microchannel was coated with poly(ethylene glycol monomethacrylate) (PEGMA) as the biocompatible polymer using allyltriethoxysilane (ATES) as the anchor material in scCO2 as the reactive medium. Results were compared with those using the conventional wet method. The surface of a microchannel could not be modified by the wet method owing to the surface tension and viscosity of the liquid, but it was modified uniformly by the scCO2 method probably owing to the near-zero surface tension, low viscosity, and high diffusivity of scCO2. The effect of the surface modification by the scCO2 method to prevent the adsorption of protein was as high as that of the modification by the wet method. Modified microchips can be used in biochemical and medical analyses.

  10. Irradiation-induced hardening/softening in SiO2 studied with instrumented indentation

    International Nuclear Information System (INIS)

    Nakano, Shinsuke; Muto, Shunsuke; Tanabe, Tetsuo

    2005-01-01

    To understand the plastic deformation mechanism of SiO 2 polytypes, we measured the mechanical parameters of He + -irradiated crystalline SiO 2 (α-quartz, c-SiO 2 ) and vitreous SiO 2 (silica glass, v-SiO 2 ) as functions of the irradiation dose, by using the instrumented indentation method combined with a finite-element analysis. We extracted the effects of local rotation and bending of the SiO 4 framework (the degree of local structural freedom), which play key roles in the plastic deformation, and expressed the hardness change with a simple formula. For v-SiO 2 , the changes in the density and the number of broken bonds correlated well with the change in the degree of freedom. In contrast, for c-SiO 2 the present formulation was insufficient to fully express the hardness change in the structural disordering regime. The structure change by irradiation peculiar to this material is discussed, based on the theoretical formulation

  11. Bulk properties and near-critical behaviour of SiO2 fluid

    Science.gov (United States)

    Green, Eleanor C. R.; Artacho, Emilio; Connolly, James A. D.

    2018-06-01

    Rocky planets and satellites form through impact and accretion processes that often involve silicate fluids at extreme temperatures. First-principles molecular dynamics (FPMD) simulations have been used to investigate the bulk thermodynamic properties of SiO2 fluid at high temperatures (4000-6000 K) and low densities (500-2240 kg m-3), conditions which are relevant to protoplanetary disc condensation. Liquid SiO2 is highly networked at the upper end of this density range, but depolymerises with increasing temperature and volume, in a process characterised by the formation of oxygen-oxygen (Odbnd O) pairs. The onset of vaporisation is closely associated with the depolymerisation process, and is likely to be non-stoichiometric at high temperature, initiated via the exsolution of O2 molecules to leave a Si-enriched fluid. By 6000 K the simulated fluid is supercritical. A large anomaly in the constant-volume heat capacity occurs near the critical temperature. We present tabulated thermodynamic properties for silica fluid that reconcile observations from FPMD simulations with current knowledge of the SiO2 melting curve and experimental Hugoniot curves.

  12. Characterization of Chemical Vapor Deposited Tetraethyl Orthosilicate based SiO2 Films for Photonic Devices

    Directory of Open Access Journals (Sweden)

    Jhansirani KOTCHARLAKOTA

    2016-05-01

    Full Text Available Silicon has been the choice for photonics technology because of its cost, compatibility with mass production and availability. Silicon based photonic devices are very significant from commercial point of view and are much compatible with established technology. This paper deals with deposition and characterization of SiO2 films prepared by indigenously developed chemical vapor deposition system. Ellipsometry study of prepared films showed an increase in refractive index and film thickness with the increment in deposition temperature. The deposition temperature has a significant role for stoichiometric SiO2 films, FTIR measurement has shown the three characteristics peaks of Si-O-Si through three samples prepared at temperatures 700, 750 and 800 °C while Si-O-Si stretching peak positions were observed to be shifted to lower wavenumber in accordance to the temperature. FESEM analysis has confirmed the smooth surface without any crack or disorder while EDX analysis showed the corresponding peaks of compositional SiO2 films.DOI: http://dx.doi.org/10.5755/j01.ms.22.1.7245

  13. Structural analysis of as-deposited and annealed low-temperature gallium arsenide

    Science.gov (United States)

    Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

    1993-04-01

    The structure of GaAs grown at low substrate temperatures (LT-GaAs) by molecular beam epitaxy has been studied using high resolution X-ray diffraction methods. Double crystal rocking curves from the as-deposited LT-GaAs show well defined interference fringes, indicating a high level of structural perfection. Triple crystal diffraction analysis of the as-deposited sample showed significantly less diffuse scattering near the LT-GaAs 004 reciprocal lattice point compared with the substrate 004 reciprocal lattice point, suggesting that despite the incorporation of approximately 1% excess arsenic, the epitaxial layer had superior crystalline perfection than did the GaAs substrate. Triple crystal scans of annealed LT-GaAs showed an increase in the integrated diffuse intensity by approximately a factor of three as the anneal temperature was increased from 700 to 900°C. Analogous to the effects of SiO2 precipitates in annealed Czochralski silicon, the diffuse intensity is attributed to distortions in the epitaxial LT-GaAs lattice by arsenic precipitates.

  14. Preparation and Characterization of WS2@SiO2 and WS2@PANI Core-Shell Nanocomposites

    Directory of Open Access Journals (Sweden)

    Hagit Sade

    2018-03-01

    Full Text Available Two tungsten disulfide (WS2-based core-shell nanocomposites were fabricated using readily available reagents and simple procedures. The surface was pre-treated with a surfactant couple in a layer-by-layer approach, enabling good dispersion of the WS2 nanostructures in aqueous media and providing a template for the polymerization of a silica (SiO2 shell. After a Stöber-like reaction, a conformal silica coating was achieved. Inspired by the resulting nanocomposite, a second one was prepared by reacting the surfactant-modified WS2 nanostructures with aniline and an oxidizing agent in an aqueous medium. Here too, a conformal coating of polyaniline (PANI was obtained, giving a WS2@PANI nanocomposite. Both nanocomposites were analyzed by electron microscopy, energy dispersive X-ray spectroscopy (EDS and FTIR, verifying the core-shell structure and the character of shells. The silica shell was amorphous and mesoporous and the surface area of the composite increases with shell thickness. Polyaniline shells slightly differ in their morphologies dependent on the acid used in the polymerization process and are amorphous like the silica shell. Electron paramagnetic resonance (EPR spectroscopy of the WS2@PANI nanocomposite showed variation between bulk PANI and the PANI shell. These two nanocomposites have great potential to expand the use of transition metals dichalcogenides (TMDCs for new applications in different fields.

  15. Fiber-optic thermometer application of thermal radiation from rare-earth end-doped SiO2 fiber

    International Nuclear Information System (INIS)

    Katsumata, Toru; Morita, Kentaro; Komuro, Shuji; Aizawa, Hiroaki

    2014-01-01

    Visible light thermal radiation from SiO 2 glass doped with Y, La, Ce, Pr, Nd, Eu, Tb, Dy, Ho, Er, Tm, Yb, and Lu were studied for the fiber-optic thermometer application based on the temperature dependence of thermal radiation. Thermal radiations according to Planck's law of radiation are observed from the SiO 2 fibers doped with Y, La, Ce, Pr, Eu, Tb, and Lu at the temperature above 1100 K. Thermal radiations due to f-f transitions of rare-earth ions are observed from the SiO 2 fibers doped with Nd, Dy, Ho, Er, Tm, and Yb at the temperature above 900 K. Peak intensities of thermal radiations from rare-earth doped SiO 2 fibers increase sensitively with temperature. Thermal activation energies of thermal radiations by f-f transitions seen in Nd, Dy, Ho, Er, Tm, and Yb doped SiO 2 fibers are smaller than those from SiO 2 fibers doped with Y, La, Ce, Pr, Eu, Tb, and Lu. Thermal radiation due to highly efficient f-f transitions in Nd, Dy, Ho, Er, Tm, and Yb ions emits more easily than usual thermal radiation process. Thermal radiations from rare-earth doped SiO 2 are potentially applicable for the fiber-optic thermometry above 900 K

  16. Photoluminescence properties of powder and pulsed laser-deposited PbS nanoparticles in SiO2

    International Nuclear Information System (INIS)

    Dhlamini, M.S.; Terblans, J.J.; Ntwaeaborwa, O.M.; Ngaruiya, J.M.; Hillie, K.T.; Botha, J.R.; Swart, H.C.

    2008-01-01

    Thin films of lead sulfide (PbS) nanoparticles embedded in an amorphous silica (SiO 2 ) host were grown on Si(1 0 0) substrates at different temperatures by the pulsed laser deposition (PLD) technique. Surface morphology and photoluminescence (PL) properties of samples were analyzed with scanning electron microscopy (SEM) and a 458 nm Ar + laser, respectively. The PL data show a blue-shift from the normal emission at ∼3200 nm in PbS bulk to ∼560-700 nm in nanoparticulate PbS powders and thin films. Furthermore, the PL emission of the films was red-shifted from that of the powders at ∼560 to ∼660 nm. The blue-shifting of the emission wavelengths from 3200 to ∼560-700 nm is attributed to quantum confinement of charge carriers in the restricted volume of nanoparticles, while the red-shift between powders and thin-film PbS nanoparticles is speculated to be due to an increase in the defect concentration. The red-shift increased slightly with an increase in deposition temperature, which suggests that there has been a relative growth in particle sizes during the PLD of the films at higher temperatures. Generally, the PL emission of the powders was more intense than that of the films, although the intensity of some of the films was improved marginally by post-deposition annealing at 400 deg. C. This paper compares the PL properties of powder and pulsed laser-deposited thin films of PbS nanoparticles and the effects of deposition temperatures

  17. A comparative study of the annealing behavior of Cu(In,Ga)(S,Se)2 based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatments

    International Nuclear Information System (INIS)

    Hönes, C.; Hackenberg, J.; Zweigart, S.; Wachau, A.; Hergert, F.; Siebentritt, S.

    2015-01-01

    Indium sulfide thin films deposited via thermal evaporation from compound source material have been successfully utilized as a cadmium free buffer layer for Cu(In,Ga)Se 2 based solar cells. However, high efficiencies are only reached after an additional annealing step. In this work, the annealing behavior of Cu(In,Ga)(S,Se) 2 based indium sulfide buffered solar cells is compared to the annealing behavior of similar cells, which were submitted to wet chemical treatments partly containing cadmium ions. Upon annealing a significant improvement of the initial solar cell characteristics is observed for the untreated cell and is related to the increase of activation energy for the carrier recombination process and a decrease of the ideality factor within the one diode model. It is shown here that this improvement can also be achieved by wet treatments of the absorber prior to buffer layer deposition. Upon annealing these treated cells still gain in collection length but lose open circuit voltage, which is explained here within a model including a highly p-doped absorber surface layer and supported by simulations showing that a decrease in doping density of such a surface layer would lead to the observed effects

  18. A comparative study of the annealing behavior of Cu(In,Ga)(S,Se){sub 2} based solar cells with an indium sulfide buffer layer, partly submitted to wet chemical treatments

    Energy Technology Data Exchange (ETDEWEB)

    Hönes, C., E-mail: christian.hoenes@de.bosch.com [Corporate Research and Advance Engineering, Robert Bosch GmbH, Robert-Bosch-Straße 2, D-71701 Schwieberdingen (Germany); Laboratory for Photovoltaics, University of Luxembourg, 41 rue du Brill, L-4422 Belvaux (Luxembourg); Hackenberg, J. [Corporate Research and Advance Engineering, Robert Bosch GmbH, Robert-Bosch-Straße 2, D-71701 Schwieberdingen (Germany); Zweigart, S. [Corporate Research and Advance Engineering, Robert Bosch GmbH, Postfach 10 60 50, D-70049 Stuttgart (Germany); Wachau, A.; Hergert, F. [Bosch Solar CISTech GmbH, D-14772 Brandenburg (Germany); Siebentritt, S., E-mail: susanne.siebentritt@uni.lu [Laboratory for Photovoltaics, University of Luxembourg, 41 rue du Brill, L-4422 Belvaux (Luxembourg)

    2015-03-07

    Indium sulfide thin films deposited via thermal evaporation from compound source material have been successfully utilized as a cadmium free buffer layer for Cu(In,Ga)Se{sub 2} based solar cells. However, high efficiencies are only reached after an additional annealing step. In this work, the annealing behavior of Cu(In,Ga)(S,Se){sub 2} based indium sulfide buffered solar cells is compared to the annealing behavior of similar cells, which were submitted to wet chemical treatments partly containing cadmium ions. Upon annealing a significant improvement of the initial solar cell characteristics is observed for the untreated cell and is related to the increase of activation energy for the carrier recombination process and a decrease of the ideality factor within the one diode model. It is shown here that this improvement can also be achieved by wet treatments of the absorber prior to buffer layer deposition. Upon annealing these treated cells still gain in collection length but lose open circuit voltage, which is explained here within a model including a highly p-doped absorber surface layer and supported by simulations showing that a decrease in doping density of such a surface layer would lead to the observed effects.

  19. Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2

    International Nuclear Information System (INIS)

    Daldosso, N.; Dalba, G.; Fornasini, P.; Grisenti, R.; Pavesi, L.; Luppi, M.; Magri, R.; Ossicini, S.; Degoli, E.; Rocca, F.; Boninelli, S.; Priolo, F.; Spinella, C.; Iacona, F.

    2003-01-01

    Light-emitting silicon nanocrystals embedded in SiO 2 have been investigated by x-ray absorption measurements in total electron and photoluminescence yields, by energy filtered transmission electron microscopy and by ab initio total energy calculations. Both experimental and theoretical results show that the interface between the silicon nanocrystals and the surrounding SiO 2 is not sharp: an intermediate region of amorphous nature and variable composition links the crystalline Si with the amorphous stoichiometric SiO 2 . This region plays an active role in the light-emission process

  20. Ultralow-density SiO2 aerogels prepared by a two-step sol-gel process

    International Nuclear Information System (INIS)

    Wang Jue; Li Qing; Shen Jun; Zhou Bin; Chen Lingyan; Jiang; Weiyang

    1996-01-01

    Low density SiO 2 gels are prepared by a two-step sol-gel process from TEOS. The influence of various solution ratios on the gelation process is investigated. The comparative characterization of gels using different solvent, such as ethanol, acetone and methyl cyanide, is also given. The ultralow-density SiO 2 aerogels with density less than 10 kg/m 3 are prepared by CO 2 supercritical drying technique. The structure difference between SiO 2 aerogels prepared by conventional single-step process and the two-step process is also presented

  1. Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ziwei; Xiao, Lei; Liang, Renrong, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn; Shen, Shanshan; Xu, Jun; Wang, Jing, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn [Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

    2016-06-15

    Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

  2. Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing

    International Nuclear Information System (INIS)

    Lugo, S.; Peña, Y.; Calixto-Rodriguez, M.; López-Mata, C.; Ramón, M.L.; Gómez, I.; Acosta, A.

    2012-01-01

    Highlights: ► We obtained polycrystalline silver indium sulfide thin films through the annealing of chemically deposited In 2 S 3 –Ag 2 S films. ► According to XRD chalcopyrite structure of AgInS 2 was obtained. ► AgInS 2 thin film has a band gap of 1.86 eV and a conductivity value of 1.2 × 10 −3 (Ω cm) −1 . - Abstract: AgInS 2 thin films were obtained by the annealing of chemical bath deposited In 2 S 3 –Ag 2 S layers at 400 °C in N 2 for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS 2 has been obtained. These films have an optical band gap, E g , of 1.86 eV and an electrical conductivity value of 1.2 × 10 −3 (Ω cm) −1 .

  3. Influence of layer compositions and annealing conditions on complete formation of ternary PdAgCu alloys prepared by sequential electroless and electroplating methods

    Energy Technology Data Exchange (ETDEWEB)

    Sumrunronnasak, Sarocha [Graduate Program of Petrochemistry and Polymer Science, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand); Tantayanon, Supawan, E-mail: supawan.t@chula.ac.th [Green Chemistry Research Laboratory, Department of Chemistry, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand); Kiatgamolchai, Somchai [Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand)

    2017-01-01

    PdAgCu ternary alloy membranes were synthesized by the sequential electroless plating of Pd following by electroplating of Ag and Cu onto stainless steel substrate. The composition of the composite was varied by changing the deposition times. The fabricated layers were annealed at the temperatures between 500 and 600 °C for 20–60 h. The Energy Dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD) were employed to investigate the element distribution in the membrane which provided the insight on membrane alloying process. Complete formation of the alloy could be obtained when the Pd composition was greater than a critical value of 60 wt%, and Ag and Cu contents were in the range of 18–30 wt% and 2–13 wt%, respectively. Deposition times of Ag and Cu were found to affect the completion of alloy formation. Excess amount of the deposited Cu particularly tended to segregate on the surface of the membrane. - Highlights: • Ternary PdAgCu alloy membranes were successfully prepared by the sequential electroless and electroplating methods. • The average Pd composition required to form alloy was found to be approximately at least 60%wt. • The alloy region was achieved for f Pd 60–73 wt%, Cu 18–30 wt% and Ag 2–13 wt%. • Suitable annealing temperature in the range of 500–600 °C for an adequate period of treating time (20–60 h).

  4. Single-crystal-like GdNdOx thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

    Directory of Open Access Journals (Sweden)

    Ziwei Wang

    2016-06-01

    Full Text Available Single-crystal-like rare earth oxide thin films on silicon (Si substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdOx (GNO film was deposited using a high-temperature sputtering process at 500°C. A Gd2O3 and Nd2O3 mixture was used as the sputtering target, in which the proportions of Gd2O3 and Nd2O3 were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

  5. Effect of Annealing Process on CH3NH3PbI3-XClX Film Morphology of Planar Heterojunction Perovskite Solar Cells with Optimal Compact TiO2 Layer

    Directory of Open Access Journals (Sweden)

    Dan Chen

    2017-01-01

    Full Text Available The morphology of compact TiO2 film used as an electron-selective layer and perovskite film used as a light absorption layer in planar perovskite solar cells has a significant influence on the photovoltaic performance of the devices. In this paper, the spin coating speed of the compact TiO2 is investigated in order to get a high-quality film and the compact TiO2 film exhibits pinhole- and crack-free films treated by 2000 rpm for 60 s. Furthermore, the effect of annealing process, including annealing temperature and annealing program, on CH3NH3PbI3-XClX film morphology is studied. At the optimal annealing temperature of 100°C, the CH3NH3PbI3-XClX morphology fabricated by multistep slow annealing method has smaller grain boundaries and holes than that prepared by one-step direct annealing method, which results in the reduction of grain boundary recombination and the increase of Voc. With all optimal procedures, a planar fluorine-doped tin oxide (FTO substrate/compact TiO2/CH3NH3PbI3-XClX/Spiro-MeOTAD/Au cell is prepared for an active area of 0.1 cm2. It has achieved a power conversion efficiency (PCE of 14.64%, which is 80.3% higher than the reference cell (8.12% PCE without optimal perovskite layer. We anticipate that the annealing process with optimal compact TiO2 layer would possibly become a promising method for future industrialization of planar perovskite solar cells.

  6. Highly stable piezo-immunoglobulin-biosensing of a SiO2/ZnO nanogenerator as a self-powered/active biosensor arising from the field effect influenced piezoelectric screening effect.

    Science.gov (United States)

    Zhao, Yayu; Fu, Yongming; Wang, Penglei; Xing, Lili; Xue, Xinyu

    2015-02-07

    Highly stable piezo-immunoglobulin-biosensing has been realized from a SiO2/ZnO nanowire (NW) nanogenerator (NG) as a self-powered/active biosensor. The piezoelectric output generated by the SiO2/ZnO NW NG can act not only as a power source for driving the device, but also as a sensing signal for detecting immunoglobulin G (IgG). The stability of the device is very high, and the relative standard deviation (RSD) ranges from 1.20% to 4.20%. The limit of detection (LOD) of IgG on the device can reach 5.7 ng mL(-1). The response of the device is in a linear relationship with IgG concentration. The biosensing performance of SiO2/ZnO NWs is much higher than that of bare ZnO NWs. A SiO2 layer uniformly coated on the surface of the ZnO NW acts as the gate insulation layer, which increases mechanical robustness and protects it from the electrical leakages and short circuits. The IgG biomolecules modified on the surface of the SiO2/ZnO NW act as a gate potential, and the field effect can influence the surface electron density of ZnO NWs, which varies the screening effect of free-carriers on the piezoelectric output. The present results demonstrate a feasible approach for a highly stable self-powered/active biosensor.

  7. The role of nitrogen in luminescent Si nanoprecipitate formation during annealing of Si ion-implanted SiO sub 2 layers

    CERN Document Server

    Kachurin, G A; Zhuravlev, K S; Ruault, M O

    2001-01-01

    SiO sub 2 layers were implanted with 25 keV Si sup + and 13 keV N sup + ions with the doses of (1-4) x 10 sup 1 sup 6 cm sup - sup 2 and (0.2-2) x 10 sup 1 sup 6 cm sup - sup 2 , respectively. Then the samples were annealed at 900-1100 deg C to form luminescent silicon nanoprecipitates. The nitrogen effect on the process is controlled by photoluminescence spectra. It is found out that the photoluminescence intensity increases considerably at the appropriate ratio between silicon and nitrogen. It has been concluded that the interaction of nitrogen with excessive silicon results in increasing the number of precipitation centers. This raises the nanocrystals number and reduces their mean size

  8. Biomedical bandpass filter for fluorescence microscopy imaging based on TiO2/SiO2 and TiO2/MgF2 dielectric multilayers

    International Nuclear Information System (INIS)

    Butt, M A; Fomchenkov, S A; Verma, P; Khonina, S N; Ullah, A

    2016-01-01

    We report a design for creating a multilayer dielectric optical filters based on TiO 2 and SiO 2 /MgF 2 alternating layers. We have selected Titanium dioxide (TiO 2 ) for high refractive index (2.5), Silicon dioxide (SiO 2 ) and Magnesium fluoride (MgF 2 ) as a low refractive index layer (1.45 and 1.37) respectively. Miniaturized visible spectrometers are useful for quick and mobile characterization of biological samples. Such devices can be fabricated by using Fabry-Perot (FP) filters consisting of two highly reflecting mirrors with a central cavity in between. Distributed Bragg Reflectors (DBRs) consisting of alternating high and low refractive index material pairs are the most commonly used mirrors in FP filters, due to their high reflectivity. However, DBRs have high reflectivity for a selected range of wavelengths known as the stopband of the DBR. This range is usually much smaller than the sensitivity range of the spectrometer range. Therefore a bandpass filters are required to restrict wavelength outside the stopband of the FP DBRs. The proposed filter shows a high quality with average transmission of 97.4% within the passbands and the transmission outside the passband is around 4%. Special attention has been given to keep the thickness of the filters within the economic limits. It can be suggested that these filters are exceptional choice for florescence imaging and Endoscope narrow band imaging. (paper)

  9. Fabrication of cube-like Fe3O4@SiO2@Ag nanocomposites with high SERS activity and their application in pesticide detection

    International Nuclear Information System (INIS)

    Li, Lei; Zhao, Aiwu; Wang, Dapeng; Guo, Hongyan; Sun, Henghui; He, Qinye

    2016-01-01

    The cube-like Fe 3 O 4 @SiO 2 @Ag (FSA) nanocomposites with great SERS activity have been successfully synthesized by a layer-by-layer procedure in this paper. The cube-like Fe 3 O 4 @SiO 2 core–shell structures were prepared via a new route and Ag nanoparticles were introduced onto their surface through a one-pot hydrothermal reaction. By controlling the reaction time, the coverage rate of Ag on the FSA surface could be tuned, and then a series of FSA composites were obtained. The SERS properties of these FSA composites were investigated using p-aminothiophenol (p-ATP) as the probe molecule. It was found that the FSA composites synthesized with a reaction time of 6 h showed the best SERS performance, and the detection limit for p-ATP could reach 1 × 10 −7 M. For practical application, the FSA composites were also used to detect thiram, one of the dithiocarbamate fungicides that has been widely used as a pesticide in agriculture. The detection limit is as low as 1 × 10 −6 M (0.24 ppm), lower than the maximal residue limit of 7 ppm in fruit prescribed by the US Environmental Protection Agency. The resulting substrate with high SERS activity, stability and strong magnetic responsivity makes the FSA composite a perfect choice for practical SERS detection applications.

  10. Investigation of pentacene growth on SiO2 gate insulator after photolithography for nitrogen-doped LaB6 bottom-contact electrode formation

    Science.gov (United States)

    Maeda, Yasutaka; Hiroki, Mizuha; Ohmi, Shun-ichiro

    2018-04-01

    Nitrogen-doped (N-doped) LaB6 is a candidate material for the bottom-contact electrode of n-type organic field-effect transistors (OFETs). However, the formation of a N-doped LaB6 electrode affects the surface morphology of a pentacene film. In this study, the effects of surface treatments and a N-doped LaB6 interfacial layer (IL) were investigated to improve the pentacene film quality after N-doped LaB6 electrode patterning with diluted HNO3, followed by resist stripping with acetone and methanol. It was found that the sputtering damage during N-doped LaB6 deposition on a SiO2 gate insulator degraded the crystallinity of pentacene. The H2SO4 and H2O2 (SPM) and diluted HF treatments removed the damaged layer on the SiO2 gate insulator surface. Furthermore, the N-doped LaB6 IL improved the crystallinity of pentacene and realized dendritic grain growth. Owing to these surface treatments, the hole mobility improved from 2.8 × 10-3 to 0.11 cm2/(V·s), and a steep subthreshold swing of 78 mV/dec for the OFET with top-contact configuration was realized in air even after bottom-contact electrode patterning.

  11. Photocatalytic Removal of Phenol under Natural Sunlight over N-TiO2-SiO2 Catalyst: The Effect of Nitrogen Composition in TiO2-SiO2

    Directory of Open Access Journals (Sweden)

    Viet-Cuong Nguyen

    2009-01-01

    Full Text Available In this present work, high specific surface area and strong visible light absorption nitrogen doped TiO2-SiO2 photocatalyst was synthesized by using sol-gel coupled with hydrothermal treatment method. Nitrogen was found to improve the specific surface area while it also distorted the crystal phase of the resulting N-TiO2-SiO2 catalyst. As the N/ (TiO2-SiO2 molar ratio was more than 10%, the derived catalyst presented the superior specific surface area up to 260 m2/g. Nevertheless, its photoactivity towards phenol removal was observed to significantly decrease, which could results from the too low crystallinity. The nitrogen content in N-TiO2-SiO2 catalyst was therefore necessary to be optimized in terms of phenol removal efficiency and found at ca. 5%. Under UVA light and natural sunlight irradiation of 80 min, N(5%-TiO2-SiO2 catalyst presented the phenol decomposition efficiencies of 68 and 100%, respectively. It was also interestingly found in this study that the reaction rate was successfully expressed using a Langmuir-Hinshelwood (L-H model, indicating the L-H nature of photocatalytic phenol decomposition reaction on the N-TiO2-SiO2 catalyst.

  12. Efficient VEGF targeting delivery of DOX using Bevacizumab conjugated SiO2@LDH for anti-neuroblastoma therapy.

    Science.gov (United States)

    Zhu, Rongrong; Wang, Zhaoqi; Liang, Peng; He, Xiaolie; Zhuang, Xizhen; Huang, Ruiqi; Wang, Mei; Wang, Qigang; Qian, Yechang; Wang, Shilong

    2017-11-01

    Vascular endothelial growth factor (VEGF) plays an important role in angiogenesis and is highly expressed in carcinoma, which make it an important target for tumor targeting therapy. Neuroblastoma is the main cause for cancer-related death in children. Like most solid tumors, it is also accompanied with the overexpression of VEGF. Doxorubicin Hydrochloride (DOX), a typical chemotherapeutic agent, exhibits efficient anticancer activities for various cancers. However, DOX, without targeting ability, usually causes severe damage to normal tissues. To overcome the shortages, we designed a novel nano-composite, which is Bevacizumab (Bev) modified SiO 2 @LDH nanoparticles (SiO 2 @LDH-Bev), loading with DOX to achieve targeting ability and curative efficiency. SiO 2 @LDH-DOX and SiO 2 @LDH-Bev-DOX nanoparticles were synthesized and the physicochemical properties were characterized by TEM detection, Zeta potential analysis, FTIR, Raman and XPS analysis. Then in vitro and in vivo anti-neuroblastoma efficiency, targeting ability and mechanisms of anti-carcinoma and anti-angiogenesis of SiO 2 @LDH-Bev-DOX were explored. Our results indicated that we obtained the core-shell structure SiO 2 @LDH-Bev with an average diameter of 253±10nm and the amount of conjugated Bev was 4.59±0.38μg/mg SiO 2 @LDH-Bev. SiO 2 @LDH-Bev-DOX could improve the cellular uptake and the targeting effect of DOX to brain and tumor, enhance the anti-neuroblastoma and anti-angiogenesis efficiency both in vitro and in vivo, and alleviate side effects of DOX sharply, especially hepatic injury. In addition, we also demonstrated that angiogenesis inhibitory effect was mediated by DOX and VEGF triggered signal pathways, including PI3K/Akt, Raf/MEK/ERK, and adhesion related pathways. In summary, SiO 2 @LDH-Bev could be a potential VEGF targeting nanocarrier applied in VEGF positive cancer therapy. This paper explored that a novel core-shell structure nanomaterial SiO 2 @LDH and modified SiO 2 @LDH with Bevacizumab (Bev) to form a new tumor vasculature targeting nanocarrier SiO 2 @LDH-Bev as vector of DOX, which was not reported before. The results indicated that SiO 2 @LDH-Bev could improve the VEGF targeting ability, anti-neuroblastoma and anti-angiogenesis efficiency of DOX. At the same time, SiO 2 @LDH-Bev-DOX could erase the cardiac toxicity and hepatic injury coming from DOX. Tube formation showed SiO 2 @LDH-Bev-DOX had the strongest effect on inhibiting angiogenesis among all the four formulations. SiO 2 @LDH-Bev-DOX could downregulate expression of p-VEGFR and inhibit activation of the Raf/MEK/ERK, p38MAPK, PI3K/Akt and FAK signaling pathways to achieve the goal of anti-angiogenesis. This work provides a novel system for the safe and efficient use of Bev and DOX on Neuroblastoma and explores the mechanism of the function of nano carrier in cancer therapy both in vitro and in vivo. Copyright © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  13. Preparation and characterization of silane-modified SiO2 particles reinforced resin composites with fluorinated acrylate polymer.

    Science.gov (United States)

    Liu, Xue; Wang, Zengyao; Zhao, Chengji; Bu, Wenhuan; Na, Hui

    2018-04-01

    A series of fluorinated dental resin composites were prepared with two kinds of SiO 2 particles. Bis-GMA (bisphenol A-glycerolate dimethacrylate)/4-TF-PQEA (fluorinated acrylate monomer)/TEGDMA (triethylene glycol dimethacrylate) (40/30/30, wt/wt/wt) was introduced as resin matrix. SiO 2 nanopartices (30nm) and SiO 2 microparticles (0.3µm) were silanized with 3-methacryloxypropyl trimethoxysilane (γ-MPS) and used as fillers. After mixing the resin matrix with 0%, 10%, 20%, 30% SiO 2 nanopartices and 0%, 10%, 20%, 30%, 40%, 50% SiO 2 microparticles, respectively, the fluorinated resin composites were obtained. Properties including double bond conversion (DC), polymerization shrinkage (PS), water sorption (W p ), water solubility (W y ), mechanical properties and cytotoxicity were investigated in comparison with those of neat resin system. The results showed that, filler particles could improve the overall performance of resin composites, particularly in improving mechanical properties and reducing PS of composites along with the addition of filler loading. Compared to resin composites containing SiO 2 microparticles, SiO 2 nanoparticles resin composites had higher DC, higher mechanical properties, lower PS and lower W p under the same filler content. Especially, 50% SiO 2 microparticles reinforced resins exhibited the best flexural strength (104.04 ± 7.40MPa), flexural modulus (5.62 ± 0.16GPa), vickers microhardness (37.34 ± 1.13 HV), compressive strength (301.54 ± 5.66MPa) and the lowest polymerization (3.42 ± 0.22%). Copyright © 2018 Elsevier Ltd. All rights reserved.

  14. Carboxylated SiO2-coated α-Fe nanoparticles: towards a versatile platform for biomedical applications.

    Science.gov (United States)

    Kohara, Kaori; Yamamoto, Shinpei; Seinberg, Liis; Murakami, Tatsuya; Tsujimoto, Masahiko; Ogawa, Tetsuya; Kurata, Hiroki; Kageyama, Hiroshi; Takano, Mikio

    2013-03-28

    Carboxylated SiO2-coated α-Fe nanoparticles have been successfully prepared via CaH2-mediated reduction of SiO2-coated Fe3O4 nanoparticles followed by surface carboxylation. These α-Fe-based nanoparticles, which are characterized by ease of coating with additional functional groups, a large magnetization of 154 emu per g-Fe, enhanced corrosion resistivity, excellent aqueous dispersibility, and low cytotoxicity, have potential to be a versatile platform in biomedical applications.

  15. Selective adsorption of thiophenic compounds from fuel over TiO2/SiO2 under UV-irradiation.

    Science.gov (United States)

    Miao, Guang; Ye, Feiyan; Wu, Luoming; Ren, Xiaoling; Xiao, Jing; Li, Zhong; Wang, Haihui

    2015-12-30

    This study investigates selective adsorption of thiophenic compounds from fuel over TiO2/SiO2 under UV-irradiation. The TiO2/SiO2 adsorbents were prepared and then characterized by N2 adsorption, X-ray diffraction and X-ray photoelectron spectroscopy. Adsorption isotherms, selectivity and kinetics of TiO2/SiO2 were measured in a UV built-in batch reactor. It was concluded that (a) with the employment of UV-irradiation, high organosulfur uptake of 5.12 mg/g was achieved on the optimized 0.3TiO2/0.7SiO2 adsorbent at low sulfur concentration of 15 ppmw-S, and its adsorption selectivity over naphthalene was up to 325.5; (b) highly dispersed TiO2 served as the photocatalytic sites for DBT oxidation, while SiO2 acted as the selective adsorption sites for the corresponding oxidized DBT using TiO2 as a promoter, the two types of active sites worked cooperatively to achieve the high adsorption selectivity of TiO2/SiO2; (c) The kinetic rate-determining step for the UV photocatalysis-assisted adsorptive desulfurization (PADS) over TiO2/SiO2 was DBT oxidation; (d) consecutive adsorption-regeneration cycles suggested that the 0.3TiO2/0.7SiO2 adsorbent can be regenerated by acetonitrile washing followed with oxidative air treatment. This work demonstrated an effective PADS approach to greatly enhance adsorption capacity and selectivity of thiophenic compounds at low concentrations for deep desulfurization under ambient conditions. Copyright © 2015 Elsevier B.V. All rights reserved.

  16. Fabrication of hierarchical structured SiO2/polyetherimide-polyurethane nanofibrous separators with high performance for lithium ion batteries

    International Nuclear Information System (INIS)

    Zhai, Yunyun; Xiao, Ke; Yu, Jianyong; Ding, Bin

    2015-01-01

    Highlights: • Electrospinning followed by dip-coating was used to fabricate SiO 2 /PEI-PU membranes. • Introducing PEI, PU and SiO 2 improved safety, tensile strength and ionic conductivity. • Coating SiO 2 also restrained the micro-shorting and migrated the self-discharge. • SiO 2 /PEI-PU membranes based cell exhibited prominent cycling and rate performance. - ABSTRACT: The performance of lithium ion battery based on electrospun nanofibrous membranes has gained a great deal of attention in the past decades, but the intrinsic low mechanical strength and large pore size of electrospun membranes limit their battery performance. To overcome this limitation, a powerful strategy for designing, fabricating and evaluating silica nanoparticles coated polyetherimide-polyurethane (SiO 2 /PEI-PU) nanofibrous composite membranes is easily developed via electrospinning followed by a dip-coating process. Benefiting from the high porosity, interpenetrating network structure and synergetic effect of PU, PEI and SiO 2 nanoparticles, the as-prepared composite membranes exhibit high ionic conductivity (2.33 mS cm −1 ), robust tensile strength (15.65 MPa) and improved safety (excellent thermal resistance and flame retardant property). Additionally, the as-prepared composite membranes possess relatively narrow pore size distribution with average pore size of 0.58 μm after coating SiO 2 nanoparticles, which plays an important role in hindering the micro-shorting and mitigating self-discharge. Significantly, the SiO 2 /PEI-PU membranes based Li/LiFePO 4 cell exhibits more excellent cycling stability with capacity retention of 98.7% after 50 cycles at 0.2 C rate and better rate capability compared with the Celgard membrane based cell. The results clearly demonstrate that this is a promising separator candidate for next-generation lithium ion batteries, which may represent a significant step toward separators with improved performance

  17. Room temperature synthesis of porous SiO2 thin films by plasma enhanced chemical vapor deposition

    OpenAIRE

    Barranco Quero, Ángel; Cotrino Bautista, José; Yubero Valencia, Francisco; Espinós, J. P.; Rodríguez González-Elipe, Agustín

    2004-01-01

    Synthesis of porous SiO2 thin films in room temperature was carried out using plasma enhanced chemical vapor deposition (CVD) in an electron cyclotron resonance microwave reactor with a downstream configuration.The gas adsorption properties and the type of porosity of the SiO2 thin films were assessed by adsorption isotherms of toluene at room temperature.The method could also permit the tailoring synthesis of thin films when both composition and porosity can be simultaneously and independent...

  18. Photocatalytic degradation of Acephate, Omethoate, and Methyl parathion by Fe_3O_4@SiO_2@mTiO_2 nanomicrospheres

    International Nuclear Information System (INIS)

    Zheng, Lingling; Pi, Fuwei; Wang, Yifan; Xu, Hui; Zhang, Yinzhi; Sun, Xiulan

    2016-01-01

    Highlights: • An efficient photocatalyst Fe_3O_4@SiO_2@mTiO_2 with high magnetic response and large specific surface area was synthesized. • Photocatalytic efficiency of Fe_3O_4@SiO_2@mTiO_2 on Acephate, Omethoate, and Methyl Parathion was higher than TiO_2 P-25. • Possible photocatalytic degradation mechanisms for the Acephate, Omethoate, and Methyl Parathion were proposed. - Abstract: A novel magnetic mesoporous nanomicrospheres Fe_3O_4@SiO_2@mTiO_2 were synthetized and characterized by a series of techniques including FE-TEM, EDS, FE-SEM, PXRD, XPS, BET, TGA as well as VSM, and subsequently tested as a photocatalyst for the degradation of Acephate, Omethoate, and Methyl parathion under UV irradiation. The well-designed nanomicrospheres exhibit a pure and highly crystalline anatase TiO_2 layer, large specific surface area, and high-magnetic-response. Photocatalytic degradation of the three organophosphorus pesticides (OPPs) and the formation intermediates were identified using HPLC, TOC-V_c_p_n, IC, pH meter and GC–MS. Acephate, Omethoate, and Methyl parathion disappeared after 45 min, 45 min, and 80 min UV illumination, respectively. At the end of the treatment, the total organic carbon (TOC) of the OPPs was reduced 80–85%. The main mineralization products were SO_4"2"−, NO_3"− and PO_4"3"− and Omethoate additionally formed NO_2"−. Based on the results, we proposed the photocatalytic degradation pathways for Acephate, Omethoate, and Methyl parathion.

  19. Nano-regime Length Scales Extracted from the First Sharp Diffraction Peak in Non-crystalline SiO2 and Related Materials: Device Applications

    Directory of Open Access Journals (Sweden)

    Phillips James

    2010-01-01

    Full Text Available Abstract This paper distinguishes between two different scales of medium range order, MRO, in non-crystalline SiO2: (1 the first is ~0.4 to 0.5 nm and is obtained from the position of the first sharp diffraction peak, FSDP, in the X-ray diffraction structure factor, S(Q, and (2 the second is ~1 nm and is calculated from the FSDP full-width-at-half-maximum FWHM. Many-electron calculations yield Si–O third- and O–O fourth-nearest-neighbor bonding distances in the same 0.4–0.5 nm MRO regime. These derive from the availability of empty Si dπ orbitals for back-donation from occupied O pπ orbitals yielding narrow symmetry determined distributions of third neighbor Si–O, and fourth neighbor O–O distances. These are segments of six member rings contributing to connected six-member rings with ~1 nm length scale within the MRO regime. The unique properties of non-crystalline SiO2 are explained by the encapsulation of six-member ring clusters by five- and seven-member rings on average in a compliant hard-soft nano-scaled inhomogeneous network. This network structure minimizes macroscopic strain, reducing intrinsic bonding defects as well as defect precursors. This inhomogeneous CRN is enabling for applications including thermally grown ~1.5 nm SiO2 layers for Si field effect transistor devices to optical components with centimeter dimensions. There are qualitatively similar length scales in nano-crystalline HfO2 and phase separated Hf silicates based on the primitive unit cell, rather than a ring structure. Hf oxide dielectrics have recently been used as replacement dielectrics for a new generation of Si and Si/Ge devices heralding a transition into nano-scale circuits and systems on a Si chip.

  20. Magnetic SiO2 gel microspheres for arterial embolization hyperthermia

    International Nuclear Information System (INIS)

    Li Zhixia; Kawashita, Masakazu; Araki, Norio; Mitsumori, Michihide; Hiraoka, Masahiro; Doi, Masaaki

    2010-01-01

    We have prepared magnetic SiO 2 microspheres with a diameter of 20-30 μm as thermoseeds for hyperthermia of cancer. These were prepared by directly introducing preformed magnetic iron oxide nanoparticles (IONPs) into microspheres of a SiO 2 gel matrix derived from the hydrolysis of tetramethoxysilane (TMOS) in a water-in-oil (W/O) emulsion. Dimethylformamide (DMF) was used as a stabilizer, methanol (CH 3 OH) as a dispersant and ammonia (NH 4 OH) as the catalyst for the formation of the spherical particles in the aqueous phase of the W/O emulsion. The magnetic IONPs were synthesized hydrochemically in an aqueous system composed of ferrous chloride, sodium nitrate and sodium hydroxide. Mono-dispersed magnetic SiO 2 gel microspheres with a diameter of approximately 20 μm were successfully obtained by adding a determined amount of solution with a molar ratio of TMOS/DMF/CH 3 OH/H 2 O/NH 4 OH = 1:1.4:9:20:0.03 to kerosene with a surfactant (sorbitan monooleate/sorbitan monostearate = 3:1 by weight ratio) that was 30 wt% of the total amount of the oil phase. These were estimated to contain up to 60 wt% of IONPs that consisted mainly of Fe 3 O 4 and showed a higher specific absorption rate (SAR = 27.9-43.8 W g -1 ) than that of the starting IONPs (SAR = 25.3 W g -1 ) under an alternating current magnetic field of 300 Oe and 100 kHz.