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Sample records for anisotropic magnetoresistive sensor

  1. Defect detection in aluminum laser welds using an anisotropic magnetoresistive sensor array

    International Nuclear Information System (INIS)

    For the detection of defects in aluminum laser welds an anisotropic magnetoresistive (AMR) sensor array was implemented in an eddy current testing system. The reliability of weld testing is strongly influenced by the texture of the laser weld whose field response significantly superimposes the defect's magnetic signature. A finite-element model was used to determine the influence of the weld's topology on the detection of defects such as porosities and inclusions hosted in the aluminum matrix. When using an AMR sensor array with field sensitivity of better than 1 nT/√Hz defects with a radius smaller than 100 μm could be detected and classified

  2. Molecular anisotropic magnetoresistance

    OpenAIRE

    Otte, Fabian; Heinze, Stefan; Mokrousov, Yuriy

    2015-01-01

    Using density functional theory calculations, we demonstrate that the effect of anisotropic magnetoresistance (AMR) can be enhanced by orders of magnitude with respect to conventional bulk ferromagnets in junctions containing molecules sandwiched between ferromagnetic leads. We study ballistic transport in metal-benzene complexes contacted by $3d$ transition-metal wires. We show that the gigantic AMR can arise from spin-orbit coupling effects in the leads, drastically enhanced by orbital-symm...

  3. Single nucleotide polymorphism (SNP) detection on a magnetoresistive sensor

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Østerberg, Frederik Westergaard; Dufva, Martin;

    2013-01-01

    We present a magnetoresistive sensor platform for hybridization assays and demonstrate its applicability on single nucleotide polymorphism (SNP) genotyping. The sensor relies on anisotropic magnetoresistance in a new geometry with a local negative reference and uses the magnetic field from the...

  4. Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts.

    Science.gov (United States)

    Schöneberg, J; Otte, F; Néel, N; Weismann, A; Mokrousov, Y; Kröger, J; Berndt, R; Heinze, S

    2016-02-10

    Anisotropic magnetoresistance, that is, the sensitivity of the electrical resistance of magnetic materials on the magnetization direction, is expected to be strongly enhanced in ballistic transport through nanoscale junctions. However, unambiguous experimental evidence of this effect is difficult to achieve. We utilize single-atom junctions to measure this ballistic anisotropic magnetoresistance (AMR). Single Co and Ir atoms are deposited on domains and domain walls of ferromagnetic Fe layers on W(110) to control their magnetization directions. They are contacted with nonmagnetic tips in a low-temperature scanning tunneling microscope to measure the junction conductances. Large changes of the magnetoresistance occur from the tunneling to the ballistic regime due to the competition of localized and delocalized d-orbitals, which are differently affected by spin-orbit coupling. This work shows that engineering the AMR at the single atom level is feasible. PMID:26783634

  5. Tunneling anisotropic magnetoresistance: A spin-valve-like tunnel magnetoresistance using a single magnetic layer

    Czech Academy of Sciences Publication Activity Database

    Gould, C.; Rüster, C.; Jungwirth, Tomáš; Girgis, E.; Schott, G. M.; Giraud, R.; Brunner, K.; Schmidt, G.; Molenkamp, L. W.

    2004-01-01

    Roč. 93, č. 11 (2004), 117203/1-117203/4. ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : semiconductor spintronic s * tunneling anisotropic magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.218, year: 2004

  6. Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Vašek, Petr; Svoboda, Pavel; Novák, Vít; Cukr, Miroslav; Výborný, Karel; Jurka, Vlastimil; Stuchlík, Jiří; Orlita, Milan; Maude, D. K.

    2010-01-01

    Roč. 23, č. 6 (2010), 1161-1163. ISSN 1557-1939 R&D Projects: GA AV ČR KAN400100652; GA MŠk MEB020928 Grant ostatní: EU EuroMagNET II(XE) Egide 19535NF Institutional research plan: CEZ:AV0Z10100521 Keywords : GaMnAs * anisotropic magnetoresistance * hydrogenation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.014, year: 2010

  7. Low-frequency noise characterization of a magnetic field monitoring system using an anisotropic magnetoresistance

    CERN Document Server

    Mateos, I; Lobo, A

    2016-01-01

    A detailed study about magnetic sensing techniques based on anisotropic magnetoresistive sensors shows that the technology is suitable for low-frequency space applications like the eLISA mission. Low noise magnetic measurements at the sub-millihertz frequencies were taken by using different electronic noise reduction techniques in the signal conditioning circuit. We found that conventional modulation techniques reversing the sensor bridge excitation do not reduce the potential $1/f$ noise of the magnetoresistors, so alternative methods such as flipping and electro-magnetic feedback are necessary. In addition, a low-frequency noise analysis of the signal conditioning circuits has been performed in order to identify and minimize the different main contributions from the overall noise. The results for chip-scale magnetoresistances exhibit similar noise along the eLISA bandwidth ($0.1\\,{\\rm mHz}-1\\,{\\rm Hz}$) to the noise measured by means of the voluminous fluxgate magnetometers used in its precursor mission, kn...

  8. Anisotropic Magnetoresistance of Cobalt Films Prepared by Thermal Evaporation

    Directory of Open Access Journals (Sweden)

    Yuttanun PANSONG

    2005-01-01

    Full Text Available Cobalt films on silicon substrates were prepared by thermal evaporation. By evaporating 0.05 g of cobalt for 80-240 s, a thickness from 21.1 to 67.7 nm was obtained with a deposition rate about 0.26-0.32 nm per second. The 29 nm-thick cobalt film exhibited magnetoresistance (MR ranging from -0.0793% (field perpendicular to the current to +0.0134% (field parallel to the current with saturation in a 220 mT magnetic field. This MR was attributed to anisotropic magnetoresistance (AMR since changing the angle between the field and the current (θ gave rise to a change in the electrical resistance (Rθ. The results agreed with the theory since the plot between Rθ and cos2θ could be linearly fitted. AMR was not observed in non-ferromagnetic gold films whose resistance was insensitive to the angle between the current and magnetic field.

  9. Angular dependence of anisotropic magnetoresistance in magnetic systems

    Science.gov (United States)

    Zhang, Steven S.-L.; Zhang, Shufeng

    2014-05-01

    Anisotropic magnetoresistance (AMR), whose physical origin is attributed to the combination of spin dependent scattering and spin orbital coupling (SOC), usually displays simple angular dependence for polycrystalline ferromagnetic metals. By including generic spin dependent scattering and spin Hall (SH) terms in the Ohm's law, we explicitly show that various magneto-transport phenomena such as anomalous Hall (AH), SH, planar Hall (PH) and AMR could be quantitatively related for bulk polycrystalline ferromagnetic metals. We also discuss how AMR angular dependence is affected by the presence of interfacial SOC in magnetic layered structure.

  10. Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

    Czech Academy of Sciences Publication Activity Database

    Giddings, A.D.; Makarovsky, O. N.; Khalid, M.N.; Yasin, S.; Edmonds, K. W.; Campion, R. P.; Wunderlich, J.; Jungwirth, Tomáš; Williams, D.A.; Gallagher, B. L.; Foxon, C. T.

    2008-01-01

    Roč. 10, č. 8 (2008), 085004/1-085004/9. ISSN 1367-2630 R&D Projects: GA ČR GEFON/06/E002; GA MŠk LC510; GA ČR GA202/05/0575; GA ČR GA202/04/1519 Grant ostatní: EU(XE) IST-015728 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductor * nanoconstriction * tunneling anisotropic magnetoresistance, Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.440, year: 2008

  11. Anisotropic magnetoresistance components in (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Rushforth, A.W.; Výborný, Karel; King, C.S.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Wunderlich, J.; Irvine, A.C.; Vašek, Petr; Novák, Vít; Olejník, Kamil; Sinova, J.; Jungwirth, Tomáš; Gallagher, B. L.

    2007-01-01

    Roč. 99, č. 14 (2007), 147207/1-147207/4. ISSN 0031-9007 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/1519; GA ČR GEFON/06/E002; GA MŠk LC510 Grant ostatní: UK(GB) GR/S81407/01 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic semiconductors * anisotropic magnetoresistence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 6.944, year: 2007

  12. Anisotropic magnetoresistivity in structured elastomer composites: modelling and experiments.

    Science.gov (United States)

    Mietta, José Luis; Tamborenea, Pablo I; Martin Negri, R

    2016-08-14

    A constitutive model for the anisotropic magnetoresistivity in structured elastomer composites (SECs) is proposed. The SECs considered here are oriented pseudo-chains of conductive-magnetic inorganic materials inside an elastomer organic matrix. The pseudo-chains are formed by fillers which are simultaneously conductive and magnetic dispersed in the polymer before curing or solvent evaporation. The SEC is then prepared in the presence of a uniform magnetic field, referred to as Hcuring. This procedure generates the pseudo-chains, which are preferentially aligned in the direction of Hcuring. Electrical conduction is present in that direction only. The constitutive model for the magnetoresistance considers the magnetic pressure, Pmag, induced on the pseudo-chains by an external magnetic field, H, applied in the direction of the pseudo-chains. The relative changes in conductivity as a function of H are calculated by evaluating the relative increase of the electron tunnelling probability with Pmag, a magneto-elastic coupling which produces an increase of conductivity with magnetization. The model is used to adjust experimental results of magnetoresistance in a specific SEC where the polymer is polydimethylsiloxane, PDMS, and fillers are microparticles of magnetite-silver (referred to as Fe3O4[Ag]). Simulations of the expected response for other materials in both superparamagnetic and blocked magnetic states are presented, showing the influence of the Young's modulus of the matrix and filler's saturation magnetization. PMID:27418417

  13. Single atom anisotropic magnetoresistance on a topological insulator surface

    KAUST Repository

    Narayan, Awadhesh

    2015-03-12

    © 2015 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. We demonstrate single atom anisotropic magnetoresistance on the surface of a topological insulator, arising from the interplay between the helical spin-momentum-locked surface electronic structure and the hybridization of the magnetic adatom states. Our first-principles quantum transport calculations based on density functional theory for Mn on Bi2Se3 elucidate the underlying mechanism. We complement our findings with a two dimensional model valid for both single adatoms and magnetic clusters, which leads to a proposed device setup for experimental realization. Our results provide an explanation for the conflicting scattering experiments on magnetic adatoms on topological insulator surfaces, and reveal the real space spin texture around the magnetic impurity.

  14. Linearization strategies for high sensitivity magnetoresistive sensors

    Science.gov (United States)

    Silva, Ana V.; Leitao, Diana C.; Valadeiro, João; Amaral, José; Freitas, Paulo P.; Cardoso, Susana

    2015-10-01

    Ultrasensitive magnetic field sensors envisaged for applications on biomedical imaging require the detection of low-intensity and low-frequency signals. Therefore linear magnetic sensors with enhanced sensitivity low noise levels and improved field detection at low operating frequencies are necessary. Suitable devices can be designed using magnetoresistive sensors, with room temperature operation, adjustable detected field range, CMOS compatibility and cost-effective production. The advent of spintronics set the path to the technological revolution boosted by the storage industry, in particular by the development of read heads using magnetoresistive devices. New multilayered structures were engineered to yield devices with linear output. We present a detailed study of the key factors influencing MR sensor performance (materials, geometries and layout strategies) with focus on different linearization strategies available. Furthermore strategies to improve sensor detection levels are also addressed with best reported values of ˜40 pT/√Hz at 30 Hz, representing a step forward the low field detection at room temperature.

  15. Giant single-molecule anisotropic magnetoresistance at room temperature.

    Science.gov (United States)

    Li, Ji-Jun; Bai, Mei-Lin; Chen, Zhao-Bin; Zhou, Xiao-Shun; Shi, Zhan; Zhang, Meng; Ding, Song-Yuan; Hou, Shi-Min; Schwarzacher, Walther; Nichols, Richard J; Mao, Bing-Wei

    2015-05-13

    We report an electrochemically assisted jump-to-contact scanning tunneling microscopy (STM) break junction approach to create reproducible and well-defined single-molecule spintronic junctions. The STM break junction is equipped with an external magnetic field either parallel or perpendicular to the electron transport direction. The conductance of Fe-terephthalic acid (TPA)-Fe single-molecule junctions is measured and a giant single-molecule tunneling anisotropic magnetoresistance (T-AMR) up to 53% is observed at room temperature. Theoretical calculations based on first-principles quantum simulations show that the observed AMR of Fe-TPA-Fe junctions originates from electronic coupling at the TPA-Fe interfaces modified by the magnetic orientation of the Fe electrodes with respect to the direction of current flow. The present study highlights new opportunities for obtaining detailed understanding of mechanisms of charge and spin transport in molecular junctions and the role of interfaces in determining the MR of single-molecule junctions. PMID:25894840

  16. Gilbert damping and anisotropic magnetoresistance in iron-based alloys

    Science.gov (United States)

    Berger, L.

    2016-07-01

    We use the two-current model of Campbell and Fert to understand the compositional dependence of the Gilbert damping parameter in certain iron alloys. In that model, spin-up and spin-down carriers have different resistivities ρ↑ and ρ↓. We emphasize the part of the Gilbert parameter, called Gsf, generated by spin-flip interband processes. Both Gsf and the anisotropic magnetoresistance Δρ are proportional to the square of the spin-orbit parameter, and also proportional to ρ↑. In bcc alloys of iron with V, Cr, Mo, etc. solutes on the left of iron in the periodic table, ρ↑ is increased by a scattering resonance (Gomes and Campbell, 1966, 1968). Then ρ↑, Δρ, and Gsf all exhibit a peak at the same moderate concentration of the solute. We find the best fit between this theory and existing experimental data of Gilbert damping for Fe-V epitaxial films at room temperature (Cheng, 2006; Scheck et al., 2007). At room temperature, the predicted Gsf peak is masked by a background arising from non-flip intraband processes. At elevated temperatures, the peak is expected to become more prominent, and less hidden in the background.

  17. Fractional modeling of the AC large-signal frequency response in magnetoresistive current sensors.

    Science.gov (United States)

    Ravelo Arias, Sergio Iván; Ramírez Muñoz, Diego; Moreno, Jaime Sánchez; Cardoso, Susana; Ferreira, Ricardo; de Freitas, Paulo Jorge Peixeiro

    2013-01-01

    Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n, but additionally, of the fractional order α is an example of a great number of systems where its input-output behavior could be more exactly modeled by a fractional behavior. Following this aim, the present work shows the experimental ac large-signal frequency response of a family of electrical current sensors based in different spintronic conduction mechanisms. Using an ac characterization set-up the sensor transimpedance function Z(t)(JF) is obtained considering it as the relationship between sensor output voltage and input sensing current, Z(t)(jf)= V(o, sensor)(jf)/I(sensor)(jf). The study has been extended to various magnetoresistance sensors based in different technologies like anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), spin-valve (GMR-SV) and tunnel magnetoresistance (TMR). The resulting modeling shows two predominant behaviors, the low-pass and the inverse low-pass with fractional index different from the classical integer response. The TMR technology with internal magnetization offers the best dynamic and sensitivity properties opening the way to develop actual industrial applications. PMID:24351648

  18. Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance in WTe2 Crystals

    OpenAIRE

    Zhao, Yanfei; Liu, Haiwen; Yan, Jiaqiang; An, Wei; Liu, Jun; Zhang, Xi; Jiang, Hua; Li, Qing; Wang, Yong; Li, Xin-Zheng; Mandrus, David; Xie, X. C.; Pan, Minghu; Wang, Jian

    2015-01-01

    WTe2 semimetal, as a typical layered transition-metal dichalcogenide, has recently attracted much attention due to the extremely large, non-saturating parabolic magnetoresistance in perpendicular field. Here, we report a systematic study of the angular dependence of the magnetoresistance in WTe2 single crystal. The violation of the Kohler rule and a significant anisotropic magnetotransport behavior in different magnetic field directions are observed. Surprisingly, when the applied field is pa...

  19. Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors

    Directory of Open Access Journals (Sweden)

    Sergio Iván Ravelo Arias

    2013-12-01

    Full Text Available Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n, but additionally, of the fractional order α is an example of a great number of systems where its input-output behavior could be more exactly modeled by a fractional behavior. Following this aim, the present work shows the experimental ac large-signal frequency response of a family of electrical current sensors based in different spintronic conduction mechanisms. Using an ac characterization set-up the sensor transimpedance function  is obtained considering it as the relationship between sensor output voltage and input sensing current,[PLEASE CHECK FORMULA IN THE PDF]. The study has been extended to various magnetoresistance sensors based in different technologies like anisotropic magnetoresistance (AMR, giant magnetoresistance (GMR, spin-valve (GMR-SV and tunnel magnetoresistance (TMR. The resulting modeling shows two predominant behaviors, the low-pass and the inverse low-pass with fractional index different from the classical integer response. The TMR technology with internal magnetization offers the best dynamic and sensitivity properties opening the way to develop actual industrial applications.

  20. Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals

    Science.gov (United States)

    Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Yao, Shu-Hua; Chen, Y. B.; Zhou, Jian; Zhang, Shan-Tao; Lu, Ming-Hui; Chen, Yan-Feng

    2016-06-01

    Recently, the extremely large magnetoresistance (MR) observed in transition metal telluride, like WTe2, attracted much attention because of the potential applications in magnetic sensor. Here, we report the observation of extremely large magnetoresistance as 3.0 × 104% measured at 2 K and 9 T magnetic field aligned along [001]-ZrSiS. The significant magnetoresistance change (˜1.4 × 104%) can be obtained when the magnetic field is titled from [001] to [011]-ZrSiS. These abnormal magnetoresistance behaviors in ZrSiS can be understood by electron-hole compensation and the open orbital of Fermi surface. Because of these superior MR properties, ZrSiS may be used in the magnetic sensors.

  1. Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals

    OpenAIRE

    Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Yao, Shu-Hua; Chen, Y. B.; Zhou, Jian; Zhang, Shan-Tao; Lu, Ming-Hui; Chen, Yan-Feng

    2016-01-01

    Recently, the extremely large magnetoresistance observed in transition metal telluride, like WTe$_2$, attracted much attention because of the potential applications in magnetic sensor. Here we report the observation of extremely large magnetoresistance as 3.0$\\times$10$^4$ % measured at 2 K and 9 T magnetic field aligned along [001]-ZrSiS. The significant magnetoresistance change (~1.4$\\times$10$^4$ %) can be obtained when the magnetic field is titled from [001] to [011]-ZrSiS. These abnormal...

  2. Tuning magnetic nanostructures and flux concentrators for magnetoresistive sensors

    Science.gov (United States)

    Yin, Xiaolu; Liu, Yen-Fu; Ewing, Dan; Ruder, Carmen K.; De Rego, Paul J.; Edelstein, A. S.; Liou, Sy-Hwang

    2015-09-01

    The methods for the optimization of the magnetoresistive (MR) sensors are to reduce sources of noises, to increase the signal, and to understand the involved fundamental limitations. The high-performance MR sensors result from important magnetic tunnel junction (MTJ) properties, such as tunneling magnetoresistance ratio (TMR), coercivity (Hc), exchange coupling field (He), domain structures, and noise properties as well as the external magnetic flux concentrators. All these parameters are sensitively controlled by the magnetic nanostructures, which can be tuned by varying junction free layer nanostructures, geometry, and magnetic annealing process etc. In this paper, we discuss some of efforts that an optimized magnetic sensor with a sensitivity as high as 5,146 %/mT. This sensitivity is currently the highest among all MR-type sensors that have been reported. The estimated noise of our magnetoresistive sensor is 47 pT/Hz1/2 at 1 Hz. This magnetoresistance sensor dissipates only 100 μW of power while operating under an applied voltage of 1 V at room temperature.

  3. Anisotropic magneto-resistance in Ni80Fe20 antidot arrays with different lattice configurations

    International Nuclear Information System (INIS)

    Highlights: • Detailed study of the magnetisation processes in antidot lattices. • Combined magnetic (MFM), magneto-transport (AMR) and numerical investigations. • Accounting for the experimentally observed differences in AMR signal amplitude in longitudinal and transverse configurations through numerical simulations. - Abstract: Ni80Fe20 antidot arrays having different lattice geometrical properties and irregularities were prepared via electron beam lithography and self-assembling of polystyrene nanospheres. All the samples were experimentally characterised by magnetic force microscopy and room-temperature magneto-resistance measurements in different configurations. The analysis, supported by micromagnetic simulations, has been focused on the effect of lattice geometry on the magneto-resistance behaviour of these systems. The detailed investigation through micromagnetic simulations of the magnetic domain configuration as a function of the applied field allows a complete understanding of the qualitative and quantitative difference of anisotropic magneto-resistance properties that have been measured in samples with different lattice geometries and in different measurement configurations

  4. Coulomb Blockade Anisotropic Magnetoresistance Effect in a (Ga,Mn)As Single-Electron Transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Kaestner, B.; Irvine, A.C.; Shick, Alexander; Stone, N.; Wang, K. Y.; Rana, U.; Giddings, A.D.; Foxon, C. T.; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2006-01-01

    Roč. 97, č. 7 (2006), 077201/1-077201/4. ISSN 0031-9007 R&D Projects: GA ČR GA202/05/0575; GA MŠk LC510 Grant ostatní: EPSRC(GB) GR/S81407/01 Institutional research plan: CEZ:AV0Z10100521 Keywords : anisotropic magnetoresistance * Coulomb blockade * single electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.072, year: 2006

  5. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    KAUST Repository

    Alfadhel, Ahmed

    2016-05-07

    A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR) sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS), is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature.

  6. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    Directory of Open Access Journals (Sweden)

    Ahmed Alfadhel

    2016-05-01

    Full Text Available A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS, is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature.

  7. Magnetoresistive sensor for real-time single nucleotide polymorphism genotyping

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Østerberg, Frederik Westergaard; Dufva, Martin;

    2014-01-01

    arising from the sensor bias current such that no external magnetic fields are needed. The sensors are integrated in a microfluidic system with temperature control. The local negative reference integrated in the sensor geometry efficiently compensates for sensor offsets, external magnetic fields and a......We demonstrate a magnetoresistive sensor platform that allows for the real-time detection of point mutations in DNA targets. Specifically, we detect point mutations at two sites in the human beta globin gene. For DNA detection, the present sensor technology has a detection limit of about 160pM and...... a dynamic range of about two orders of magnitude. The sensors are based on a new geometry for biological sensing that detects the difference between the amount of beads bound to a sensing pad and a local integrated negative reference pad. The magnetic beads are magnetised by the magnetic field...

  8. Handheld, giant magnetoresistive-sensor-based eddy current probes

    Science.gov (United States)

    Brady, S. K.; Palmer, D. D.

    2012-05-01

    The minimum crack length detectable with conventional eddy current probes increases dramatically as the thickness of metal through which the inspection is performed increases. The skin depth phenomenon is unavoidable, and demands low frequency inspection, hindering sensitivity. However, one time derivative introduced by Faraday's Law can be avoided by using giant magnetoresistive sensors to detect eddy currents instead of conventional coils, improving sensitivity. The theory will be explained, along with some probe designs and the observed benefits in sensitivity.

  9. Anisotropic magnetoresistance and current-perpendicular-to-plane giant magnetoresistance in epitaxial NiMnSb-based multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, B.; Sakuraba, Y., E-mail: Yuya.Sakuraba@nims.go.jp; Sukegawa, H.; Li, S.; Furubayashi, T. [National Institute for Materials Science (NIMS), 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Qu, G.; Hono, K. [National Institute for Materials Science (NIMS), 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Graduate School Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan)

    2016-01-14

    We fabricated (001)-oriented C1{sub b}-NiMnSb epitaxial films on MgO substrate by a magnetron sputtering system and systematically investigated the structure, magnetic property, and anisotropic magnetoresistance (AMR) effect. NiMnSb film was deposited using a stoichiometric NiMnSb target which has Mn-deficient (Mn ∼ 28.7 at. %) off-stoichiometric composition ratio. We have investigated bulk spin-polarization in NiMnSb films by measuring AMR on the basis of recent study for half-metallic L2{sub 1}-Heusler compounds. Although the negative sign of AMR ratio, which is indicative of half-metallic nature, was observed in the single layer NiMnSb films, the magnitude of AMR ratio (−0.10% at RT) was about half of the largest value reported for half-metallic L2{sub 1}-Heusler compounds. The current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) devices of NiMnSb/Ag/NiMnSb show MR ratio of 13.2% at 10 K and 4.2% at 300 K, which is higher than the previous result for NiMnSb/Cu/NiMnSb CPP-GMR devices [Caballero et al., J. Magn. Magn. Mater. 198–199, 55 (1999)], but much less than the CPP-GMR using L2{sub 1}-Heusler electrodes. The reduction of intrinsic bulk spin-polarization originating from the Mn-deficiency in NiMnSb layer is expected to be the main reason for small MR values.

  10. Microscopic mechanism of the noncrystalline anisotropic magnetoresistance in (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Výborný, Karel; Kučera, Jan; Sinova, J.; Rushforth, A.W.; Gallagher, B. L.; Jungwirth, Tomáš

    2009-01-01

    Roč. 80, č. 16 (2009), 165204/1-165204/8. ISSN 1098-0121 R&D Projects: GA AV ČR KJB100100802; GA AV ČR KAN400100652; GA ČR GEFON/06/E002 Grant ostatní: SemiSpinNet(XE) FP7- #215368; NAMASTE(XE) FP7-214499 Institutional research plan: CEZ:AV0Z10100521 Keywords : anisotropic magnetoresistance * diluted magnetic semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://arxiv.org/abs/0906.3151

  11. Tunnelling anisotropic magnetoresistance at La0.67Sr0.33MnO3-graphene interfaces

    Science.gov (United States)

    Phillips, L. C.; Lombardo, A.; Ghidini, M.; Yan, W.; Kar-Narayan, S.; Hämäläinen, S. J.; Barbone, M.; Milana, S.; van Dijken, S.; Ferrari, A. C.; Mathur, N. D.

    2016-03-01

    Using ferromagnetic La0.67Sr0.33MnO3 electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ˜32-35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La0.67Sr0.33MnO3-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.

  12. Temperature dependence of anisotropic magnetoresistance in antiferromagnetic Sr{sub 2}IrO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Wang, C.; Seinige, H.; Tsoi, M., E-mail: tsoi@physics.utexas.edu [Physics Department, University of Texas at Austin, Austin, Texas 78712 (United States); Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Cao, G. [Center for Advanced Materials, University of Kentucky, Lexington, Kentucky 40506 (United States); Zhou, J.-S.; Goodenough, J. B. [Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)

    2015-05-07

    Temperature-dependent magnetotransport properties of the antiferromagnetic semiconductor Sr{sub 2}IrO{sub 4} are investigated with point-contact devices. The point-contact technique allows to probe very small volumes and, therefore, to look for electronic transport on a microscopic scale. Point-contact measurements with single crystals of Sr{sub 2}IrO{sub 4} were intended to see whether the additional local resistance associated with a small contact area between a sharpened Cu tip and the antiferromagnet shows magnetoresistance (MR) such as that seen in bulk crystals. Point-contact measurements at liquid nitrogen temperature revealed large MRs (up to 28%) for modest magnetic fields (250 mT) applied within an IrO{sub 2} (ab) plane with angular dependence showing a crossover from four-fold to two-fold symmetry with an increasing magnetic field. Point contact measurement exhibits distinctive anisotropic magnetoresistance (AMR) in comparison to a bulk experiment, imposing intriguing questions about the mechanism of AMR in this material. Temperature-dependent MR measurements show that the MR falls to zero at the Neel temperature, but the temperature dependence of the MR ratio differs qualitatively from that of the resistivity. This AMR study helps to unveil the entanglement between electronic transport and magnetism in Sr{sub 2}IrO{sub 4} while the observed magnetoresistive phenomena can be potentially used to sense the antiferromagnetic order parameter in spintronic applications.

  13. Imaging Ferromagnetic Tracers with a Magnetoresistive Sensors Array

    Science.gov (United States)

    Leyva, Juan A.; Carneiro, Antonio A. O.; Murta, Luís O.; Baffa, O.

    2006-09-01

    The aim of this work was to study the feasibility to obtain images from a distribution of ferromagnetic tracers using a magnetoresistive multichannel sensor array (MRA). A magnetic imaging system formed by a linear array composed of 12 magnetoresistive sensors (Honeywell HMC 1001) was constructed covering a scanning area of (16×18) cm2. The signal was pre-processed for off-set correction and interpolation to generate a matrix of (256×256). The point spread function of the MRA was evaluated and the sensors were spaced accordingly. The magnetic images were generated by mapping the response of the MRA at short distances from the presence of a magnetite powder dispersed in planar phantoms with different shapes. The phantoms were magnetized by a pulse field of approximately 80 mT produced by a Helmholtz coil. Using the Wiener filtering, the magnetic source images were obtained. We conclude that this biomagnetic method can be successfully used to generate planar functional images of the gastrointestinal tract using magnetic markers in the near field.

  14. Stability of standing spin wave in permalloy thin film studied by anisotropic magnetoresistance effect

    Energy Technology Data Exchange (ETDEWEB)

    Yamanoi, K.; Yokotani, Y. [Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Cui, X. [Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Yakata, S. [Department of Information Electronics, Fukuoka Institute of Technology, 3-30-1 Wajiro-higashi, Higashi-ku, Fukuoka 811-0295 (Japan); Kimura, T., E-mail: t-kimu@phys.kyushu-u.ac.jp [Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Research Center for Quantum Nano-Spin Sciences, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan)

    2015-12-21

    We have investigated the stability for the resonant spin precession under the strong microwave magnetic field by a specially developed detection method using the anisotropic magnetoresistance effect. The electrically separated excitation and detection circuits enable us to investigate the influence of the heating effect and the nonuniform spin dynamics independently. The large detecting current is found to induce the field shift of the resonant spectra because of the Joule heating. From the microwave power dependence, we found that the linear response regime for the standing spin wave is larger than that for the ferromagnetic resonance. This robust characteristic of the standing spin wave is an important advantage for the high power operation of the spin-wave device.

  15. Spin pumping and anisotropic magnetoresistance voltages in magnetic bilayers: Theory and experiment

    Science.gov (United States)

    Azevedo, A.; Vilela-Leão, L. H.; Rodríguez-Suárez, R. L.; Lacerda Santos, A. F.; Rezende, S. M.

    2011-04-01

    We investigate experimentally and theoretically the dc voltage generated in ferromagnetic and nonmagnetic metal bilayers under ferromagnetic resonance. The voltage is given by a superposition of the contributions from spin pumping (VSP) and anisotropic magnetoresistance (VAMR). A theoretical model is presented that separately determines VSP and VAMR as a function of the applied static field intensity as well the in-plane angle. The model is used to interpret a detailed set of data obtained in a series of Ni81Fe19/Pt samples excited by in-plane ferromagnetic resonance. The results show excellent agreement between theory and the measured voltages as a function of the Permalloy and Pt layer thicknesses. Our findings show that the quantitative separation of both effects is crucial to the interpretation of experiments and the determination of the spin Hall angle and spin-diffusion length.

  16. Tunneling Anisotropic Magnetoresistance in Fe Nanoparticles Embedded in MgO Matrix

    Science.gov (United States)

    Pham, T. V.; Miwa, S.; Suzuki, Y.

    2016-05-01

    The tunnel magnetoresistance (TMR) effect is related to the relative orientation of the magnetizations of the two ferromagnetic electrodes in magnetic tunnel junctions (MTJs). The tunnel anisotropic magnetoresistance (TAMR) effect is related to the orientation of the magnetization with respect to the current direction or the crystallographic axes. Beyond the TMR, the TAMR is not only present in MTJs in which both electrodes are ferromagnetic but may also appear in tunnel structures with a single magnetic electrode. We investigated the magnetotransport properties in an Au/MgO/Fe nanoparticles/MgO/Cu tunnel junction. We found that both the TMR and TAMR can appear in tunnel junctions with Fe nanoparticles embedded in an MgO matrix. The TMR is attributed to spin-dependent tunneling between Fe nanoparticles, so the device resistance depends on the magnetization directions of adjacent Fe nanoparticles. The TAMR is attributed to the interfacial spin-orbit interaction, so the device resistance depends on each magnetization direction of an Fe nanoparticle. This is the first observation of the TAMR in Fe nanoparticles embedded in an MgO matrix.

  17. Large and Anisotropic Linear Magnetoresistance in Single Crystals of Black Phosphorus Arising From Mobility Fluctuations

    Science.gov (United States)

    Hou, Zhipeng; Yang, Bingchao; Wang, Yue; Ding, Bei; Zhang, Xiaoming; Yao, Yuan; Liu, Enke; Xi, Xuekui; Wu, Guangheng; Zeng, Zhongming; Liu, Zhongyuan; Wang, Wenhong

    2016-03-01

    Black Phosphorus (BP) is presently attracting immense research interest on the global level due to its high mobility and suitable band gap for potential application in optoelectronics and flexible devices. It was theoretically predicted that BP has a large direction-dependent electrical and magnetotransport anisotropy. Investigations on magnetotransport of BP may therefore provide a new platform for studying the nature of electron transport in layered materials. However, to the best of our knowledge, magnetotransport studies, especially the anisotropic magnetoresistance (MR) effect in layered BP, are rarely reported. Here, we report a large linear MR up to 510% at a magnetic field of 7 Tesla in single crystals of BP. Analysis of the temperature and angle dependence of MR revealed that the large linear MR in our sample originates from mobility fluctuations. Furthermore, we reveal that the large linear MR of layered BP in fact follows a three-dimensional behavior rather than a two-dimensional one. Our results have implications to both the fundamental understanding and magnetoresistive device applications of BP.

  18. On the importance of sensor height variation for detection of magnetic labels by magnetoresistive sensors

    DEFF Research Database (Denmark)

    Henriksen, Anders Dahl; Wang, Shan Xiang; Hansen, Mikkel Fougt

    2015-01-01

    Magnetoresistive sensors are widely used for biosensing by detecting the signal from magnetic labels bound to a functionalized area that usually covers the entire sensor structure. Magnetic labels magnetized by a homogeneous applied magnetic field weaken and strengthen the applied field when...... they are over and outside the sensor area, respectively, and the detailed origin of the sensor signal in experimental studies has not been clarified. We systematically analyze the signal from both a single sensor stripe and an array of sensor stripes as function of the geometrical parameters of the sensor...... stripes as well as the distribution of magnetic labels over the stripes. We show that the signal from sensor stripes with a uniform protective coating, contrary to conventional wisdom in the field, is usually dominated by the contribution from magnetic labels between the sensor stripes rather than...

  19. Detection of magnetic microbeads and ferrofluid with giant magnetoresistance sensors

    International Nuclear Information System (INIS)

    Giant magnetoresistance sensors based on multilayers [Cu/NiFeCo]x10/ Ta were fabricated by microfabrication technology. A GMR-bridge was used to detect the magnetic MyOne beads and Ferro fluid. The dependence of the GMR-bridge signals on the surface coverage of MyOne beads was studied. The results show that the GMR sensor is capable of detecting the magnetic beads. The detectable limit of MyOne beads is about 100, and the corresponding signal output is 8 μV. The GMR bridge signal is proportional to the surface coverage of the MyOne beads. The sensitivity of the GMR bridge is inversely proportional to the feature size of the GMR sensor. The GMR bridge integrated with microfludic channel was also used for dynamic detection of ferrofluid (suspension of Fe3O4 particles). The results show that the GMR bridge is capable of detecting the flow of ferrofluid, and the sensor signals are proportional to the concentration of the ferrofluid. The detection limit of concentration of the ferrofluid is 0.56 mg/ml, and the corresponding signal is 6.2 μV.

  20. Magnetoresistive-superconducting mixed sensors for biomagnetic applications

    Energy Technology Data Exchange (ETDEWEB)

    Pannetier-Lecoeur, M. [DSM/IRAMIS/SPEC, CEA Saclay, 91191 Gif sur Yvette Cedex (France); Fermon, C., E-mail: claude.fermon@cea.f [DSM/IRAMIS/SPEC, CEA Saclay, 91191 Gif sur Yvette Cedex (France); Dyvorne, H.; Jacquinot, J.F.; Polovy, H.; Walliang, A.L. [DSM/IRAMIS/SPEC, CEA Saclay, 91191 Gif sur Yvette Cedex (France)

    2010-05-15

    When coupled to a giant magnetoresistive (GMR) sensor, a superconducting loop containing a constriction can be a very sensitive magnetometer. It has thermal noise levels of few fT/sqrt(Hz), comparable to low-T{sub c} SQUID noise, with a flat frequency response. These mixed sensors are good candidates for detection of weak biomagnetic signals, like a cardiac or neuronal signature. Furthermore, being sensitive to the flux, mixed sensors can be used for nuclear magnetic resonance (NMR) detection and Magnetic Resonance Imaging (MRI) especially at low fields. They are very robust and accept strong RF pulses with a very short recovery time compared to tuned RF coils, which allow measurements of broad signals (short relaxation time or multiple resonances). We will first present the last generation sensors having a noise level of 3 fT/sqrt(Hz) and we will show signals measured at low frequency (magnetocardiography-magnetoencephalography range) and at higher frequency (NMR signals). The use of additional flux transformers for improving the signal-to-noise will be discussed. Finally, we will present perspectives for low-field MRI, which can be combined with neural signal detection (MEG), especially for brain anatomy and temporal response on the same experimental setup.

  1. Strain-induced anisotropic low-field magnetoresistance of La-Sr-Mn-O thin films

    Science.gov (United States)

    Choi, Kyung-Ku; Taniyama, Tomoyasu; Yamazaki, Yohtaro

    2001-12-01

    Sputtered La0.71Sr0.29Mn1.01O3-δ (LSMO) thin films on (001) SrTiO3, polycrystalline yttria-stabilized zirconia (YSZ) and (112¯0) sapphire substrates demonstrate the distinctive low-field magnetoresistance (MR) correlated with the microstructure and the strain of the films. The epitaxial LSMO film on (001) SrTiO3 shows the in-plane magnetic anisotropy with [110] easy axis and the attendant anisotropic MR. The polycrystalline films on YSZ and sapphire substrates with grain sizes from 20 to 60 nm exhibit different anisotropic feature of transport: the isotropic MR of the film on YSZ and the large anisotropy on sapphire substrates. Moreover, in the (112¯0) film plane of sapphire substrate, the [1¯100]SAP magnetic easy axis appears due to a large tensile stress, and the longitudinal MR becomes pronounced along the [0001]SAP hard axis. This implies that the anisotropy of the low-field MR is attributed to the stress induced by the thermal expansion mismatch between film and substrate. These results emphasize that the low-field MR in the polycrystalline manganite can be advanced by the strain induced magnetic anisotropy.

  2. Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

    Science.gov (United States)

    Kriegner, D.; Výborný, K.; Olejník, K.; Reichlová, H.; Novák, V.; Marti, X.; Gazquez, J.; Saidl, V.; Němec, P.; Volobuev, V. V.; Springholz, G.; Holý, V.; Jungwirth, T.

    2016-06-01

    Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of common II-VI semiconductors. Favourable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying zero-field antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the writing magnetic field angle, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states, which we set by heat-assisted magneto-recording and by changing the writing field direction. The multiple stability in our memory is ascribed to different distributions of domains with the Néel vector aligned along one of the three magnetic easy axes. The robustness against strong magnetic field perturbations combined with the multiple stability of the magnetic memory states are unique properties of antiferromagnets.

  3. Transverse anisotropic magnetoresistance effects in pseudo-single-crystal γ'-Fe4N thin films

    Science.gov (United States)

    Kabara, Kazuki; Tsunoda, Masakiyo; Kokado, Satoshi

    2016-05-01

    Transverse anisotropic magnetoresistance (AMR) effects, for which magnetization is rotated in an orthogonal plane to the current direction, were investigated at various temperatures, in order to clarify the structural transformation from a cubic to a tetragonal symmetry in a pseudo-single-crystal Fe4N film, which is predicted from the usual in-plane AMR measurements by the theory taking into account the spin-orbit interaction and crystal field splitting of 3d bands. According to a phenomenological theory of AMR, which derives only from the crystal symmetry, a cos 2θ component ( C2 tr ) exists in transverse AMR curves for a tetragonal system but does not for a cubic system. In the Fe4N film, the C2 tr shows a positive small value (0.12%) from 300 K to 50 K. However, the C2 t r increases to negative value below 50 K and reaches to -2% at 5 K. The drastic increasing of the C2 tr demonstrates the structural transformation from a cubic to a tetragonal symmetry below 50 K in the Fe4N film. In addition, the out-of-plane and in-plane lattice constants (c and a) were precisely determined with X-ray diffraction at room temperature using the Nelson-Riely function. As a result, the positive small C2 t r above 50 K is attributed to a slightly distorted Fe4N lattice (c/a = 1.002).

  4. Optimization of magnetoresistive sensor current for on-chip magnetic bead detection using the sensor self-field

    DEFF Research Database (Denmark)

    Henriksen, Anders Dahl; Rizzi, Giovanni; Østerberg, Frederik Westergaard;

    2015-01-01

    oxide can sustain a bias current of 30 mA for an allowed temperature increase of 5 °C. The method and models used are generally applicable for thin film sensor systems. Further, the consequences for biosensor applications of the present sensor designs and the impact on future sensor designs are......We investigate the self-heating of magnetoresistive sensors used for measurements on magnetic beads in magnetic biosensors. The signal from magnetic beads magnetized by the field due to the sensor bias current is proportional to the bias current squared. Therefore, we aim to maximize the bias...... current while limiting the sensor self-heating. We systematically characterize and model the Joule heating of magnetoresistive sensors with different sensor geometries and stack compositions. The sensor heating is determined using the increase of the sensor resistance as function of the bias current. The...

  5. Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks

    Science.gov (United States)

    Reichlová, H.; Novák, V.; Kurosaki, Y.; Yamada, M.; Yamamoto, H.; Nishide, A.; Hayakawa, J.; Takahashi, H.; Maryško, M.; Wunderlich, J.; Marti, X.; Jungwirth, T.

    2016-07-01

    We investigate the thickness and temperature dependence of a series of Ni{}0.8Fe{}0.2/Ir{}0.2Mn{}0.8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet ({{t}}{{FM}}/{{t}}{{AFM}}) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of {{t}}{{FM}}/{{t}}{{AFM}} lead to four distinct scenarios with specific electric responses to moderate magnetic fields. The characteristic dependence of the measured TAMR signal on applied voltage allows us to confirm its persistence up to room temperature despite an overlapped contribution by a thermal magnetic noise.

  6. Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers

    KAUST Repository

    Li, Zirun

    2015-02-02

    Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ′-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ′-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ′-Fe4N layer and interfacial spin scattering.

  7. Giant Magnetoresistance Sensors: A Review on Structures and Non-Destructive Eddy Current Testing Applications

    OpenAIRE

    Damhuji Rifai; Ahmed N. Abdalla; Kharudin Ali; Ramdan Razali

    2016-01-01

    Non-destructive eddy current testing (ECT) is widely used to examine structural defects in ferromagnetic pipe in the oil and gas industry. Implementation of giant magnetoresistance (GMR) sensors as magnetic field sensors to detect the changes of magnetic field continuity have increased the sensitivity of eddy current techniques in detecting the material defect profile. However, not many researchers have described in detail the structure and issues of GMR sensors and their application in eddy ...

  8. Magnetic anisotropy and anisotropic magnetoresistance in strongly phase separated manganite thin films

    Science.gov (United States)

    Kandpal, Lalit M.; Singh, Sandeep; Kumar, Pawan; Siwach, P. K.; Gupta, Anurag; Awana, V. P. S.; Singh, H. K.

    2016-06-01

    The present study reports the impact of magnetic anisotropy (MA) on magnetotransport properties such as the magnetic transitions, magnetic liquid behavior, glass transition and anisotropic magnetoresistance (AMR) in epitaxial film (thickness 42 nm) of strongly phase separated manganite La5/8-yPryCa3/8MnO3 (y≈0.4). Angle dependent magnetization measurement confirms the out-of-plane magnetic anisotropy with the magnetic easy axes aligned in the plane of the film and the magnetic hard axis along the normal to the film plane. The more prominent divergence between the zero filed cooled (ZFC) and field cooled warming (FCW) and the stronger hysteresis between the field cooled cooling (FCC) and FCW magnetization for H ∥ shows the weakening of the magnetic liquid along the magnetic hard axis. The peak at Tp≈42 K in FCW magnetization, which characterizes the onset of spin freezing shifts down to Tp≈18 K as the field direction is switched from the easy axes (H ∥) to the hard axis (H ⊥). The glass transition, which appears at Tg≈28 K for H ∥ disappears for H ⊥. The easy axis magnetization (M∣∣) appears to saturate around H~20 kOe, but the hard axis counterpart (M⊥) does not show such tendency even up to H=50 kOe. MA appears well above the ferromagnetic (FM) transition at T≈170 K, which is nearly the same as the Neel temperature (TN) of M⊥ - T . The temperature dependent resistivity measured at H=10 kOe applied along the easy axis (ρ|| - T) and the hard axis (ρ⊥ - T) shows insulator metal transition (IMT) at ≈106 K and ≈99 K in the cooling cycle, respectively. The large difference between ρ⊥ - T and ρ|| - T during the cooling cycle and in the vicinity of IMT results in huge AMR of ≈-142% and -115%. The observed properties have been explained in terms of the MA induced variation in the relative fraction of the coexisting magnetic phases.

  9. A device model framework for magnetoresistive sensors based on the Stoner–Wohlfarth model

    International Nuclear Information System (INIS)

    The Stoner–Wohlfarth (SW) model provides an efficient analytical model to describe the behavior of magnetic layers within magnetoresistive sensors. Combined with a proper description of magneto-resistivity an efficient device model can be derived, which is necessary for an optimal electric circuit design. Parameters of the model are determined by global optimization of an application specific cost function which contains measured resistances for different applied fields. Several application cases are examined and used for validation of the device model. - Highlights: • An efficient device model framework for various types of magnetoresistive sensors is presented. • The model is based on the analytical solution of the Stoner–Wohlfarth model. • Numerical optimization methods provide optimal model parameters for a different application cases. • The model is applied to several application cases and is able to reproduce measured hysteresis and swiching behavior

  10. Measuring strain and deflections of moving machine parts by a dual-system magnetoresistive sensor

    Czech Academy of Sciences Publication Activity Database

    Procházka, Pavel; Vaněk, František

    Cambridge: University of Cambridge, 2014. [International Conference on Experimental Mechanics /16./. 07.07.2014-11.07.2014, Cambridge] R&D Projects: GA TA ČR TA02020728 Institutional support: RVO:61388998 Keywords : turbine blade * vibration measurement * biaxial magnetoresistive sensor Subject RIV: BI - Acoustics

  11. Development and Application of Wide Bandwidth Magneto-Resistive Sensor Based Eddy Current Probe

    Science.gov (United States)

    Wincheski, Russell A.; Simpson, John

    2010-01-01

    The integration of magneto-resistive sensors into eddy current probes can significantly expand the capabilities of conventional eddy current nondestructive evaluation techniques. The room temperature solid-state sensors have typical bandwidths in the megahertz range and resolutions of tens of microgauss. The low frequency sensitivity of magneto-resistive sensors has been capitalized upon in previous research to fabricate very low frequency eddy current sensors for deep flaw detection in multilayer conductors. In this work a modified probe design is presented to expand the capabilities of the device. The new probe design incorporates a dual induction source enabling operation from low frequency deep flaw detection to high frequency high resolution near surface material characterization. Applications of the probe for the detection of localized near surface conductivity anomalies are presented. Finite element modeling of the probe is shown to be in good agreement with experimental measurements.

  12. On-chip magnetic bead-based DNA melting curve analysis using a magnetoresistive sensor

    International Nuclear Information System (INIS)

    We present real-time measurements of DNA melting curves in a chip-based system that detects the amount of surface-bound magnetic beads using magnetoresistive magnetic field sensors. The sensors detect the difference between the amount of beads bound to the top and bottom sensor branches of the differential sensor geometry. The sensor surfaces are functionalized with wild type (WT) and mutant type (MT) capture probes, differing by a single base insertion (a single nucleotide polymorphism, SNP). Complementary biotinylated targets in suspension couple streptavidin magnetic beads to the sensor surface. The beads are magnetized by the field arising from the bias current passed through the sensors. We demonstrate the first on-chip measurements of the melting of DNA hybrids upon a ramping of the temperature. This overcomes the limitation of using a single washing condition at constant temperature. Moreover, we demonstrate that a single sensor bridge can be used to genotype a SNP. - Highlights: • We apply magnetoresistive sensors to study solid-surface hybridization kinetics of DNA. • We measure DNA melting profiles for perfectly matching DNA duplexes and for a single base mismatch. • We present a procedure to correct for temperature dependencies of the sensor output. • We reliably extract melting temperatures for the DNA hybrids. • We demonstrate direct measurement of differential binding signal for two probes on a single sensor

  13. On-chip magnetic bead-based DNA melting curve analysis using a magnetoresistive sensor

    Energy Technology Data Exchange (ETDEWEB)

    Rizzi, Giovanni, E-mail: giori@nanotech.dtu.dk; Østerberg, Frederik W.; Henriksen, Anders D.; Dufva, Martin; Hansen, Mikkel F., E-mail: mikkel.hansen@nanotech.dtu.dk

    2015-04-15

    We present real-time measurements of DNA melting curves in a chip-based system that detects the amount of surface-bound magnetic beads using magnetoresistive magnetic field sensors. The sensors detect the difference between the amount of beads bound to the top and bottom sensor branches of the differential sensor geometry. The sensor surfaces are functionalized with wild type (WT) and mutant type (MT) capture probes, differing by a single base insertion (a single nucleotide polymorphism, SNP). Complementary biotinylated targets in suspension couple streptavidin magnetic beads to the sensor surface. The beads are magnetized by the field arising from the bias current passed through the sensors. We demonstrate the first on-chip measurements of the melting of DNA hybrids upon a ramping of the temperature. This overcomes the limitation of using a single washing condition at constant temperature. Moreover, we demonstrate that a single sensor bridge can be used to genotype a SNP. - Highlights: • We apply magnetoresistive sensors to study solid-surface hybridization kinetics of DNA. • We measure DNA melting profiles for perfectly matching DNA duplexes and for a single base mismatch. • We present a procedure to correct for temperature dependencies of the sensor output. • We reliably extract melting temperatures for the DNA hybrids. • We demonstrate direct measurement of differential binding signal for two probes on a single sensor.

  14. Prospect for room temperature tunneling anisotropic magnetoresistance effect: Density of statesanisotropies in CoPt systems

    Czech Academy of Sciences Publication Activity Database

    Shick, Alexander; Máca, František; Mašek, Jan; Jungwirth, Tomáš

    2006-01-01

    Roč. 73, č. 2 (2006), 024418/1-024418/4. ISSN 1098-0121 R&D Projects: GA AV ČR(CZ) IAA100100530 Institutional research plan: CEZ:AV0Z10100521 Keywords : tunneling magnetoresistance * metallic ferromagnets * magnetocrystalline anisotropie s Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.107, year: 2006

  15. Anisotropic tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions

    International Nuclear Information System (INIS)

    We have observed very large tunneling magnetoresistance (TMR) in Ga1-xMnxAs/AlAs/Ga1-xMnxAs ferromagnetic semiconductor tunnel junctions. A TMR ratio as high as 75% was obtained in a junction with a thin (1.5 nm) AlAs tunnel barrier when the magnetic field was applied along the [100] axis in the film plane. The TMR ratio decreased when the applied magnetic field direction was along the [1 bar 10] and [110]. This anisotropic TMR was found to be explained by the single-domain theory assuming cubic magnetic anisotropy with the easy axis of , which is induced by the zincblende-type Ga1-xMnxAs crystal structure. [copyright] 2001 American Institute of Physics

  16. Room-Temperature Perpendicular Exchange Coupling and Tunneling Anisotropic Magnetoresistance in an Antiferromagnet-Based Tunnel Junction

    Science.gov (United States)

    Wang, Y. Y.; Song, C.; Cui, B.; Wang, G. Y.; Zeng, F.; Pan, F.

    2012-09-01

    We investigate the exchange coupling between perpendicular anisotropy (PMA) Co/Pt and IrMn in-plane antiferromagnets (AFMs), as well as tunneling anisotropic magnetoresistance (TAMR) in [Pt/Co]/IrMn/AlOx/Pt tunnel junctions, where Co/Pt magnetization drives rotation of AFM moments with the formation of exchange-spring twisting. When coupled with a PMA ferromagnet, the AFM moments partially rotate with out-of-plane magnetic fields, in contrast with being pinned along the easy direction of IrMn for in-plane fields. Because of the superior thermal tolerance of perpendicular exchange coupling and the stability of moments in ˜6nm-thick IrMn, TAMR gets significantly enhanced up to room temperature. Their use would advance the process towards practical AFM spintronics.

  17. On-chip magnetic bead-based DNA melting curve analysis using a magnetoresistive sensor

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Østerberg, Frederik Westergaard; Henriksen, Anders Dahl;

    2014-01-01

    We present real-time measurements of DNA melting curves in a chip-based system that detects the amount of surface-bound magnetic beads using magnetoresistive magnetic field sensors. The sensors detect the difference between the amount of beads bound to the top and bottom sensor branches of the...... differential sensor geometry. The sensor surfaces are functionalized with wild type (WT) and mutant type (MT) capture probes, differing by a single base insertion (a single nucleotide polymorphism, SNP). Complementary biotinylated targets in suspension couple streptavidin magnetic beads to the sensor surface....... The beads are magnetized by the field arising from the bias current passed through the sensors. We demonstrate the first on-chip measurements of the melting of DNA hybrids upon a ramping of the temperature. This overcomes the limitation of using a single washing condition at constant temperature...

  18. Giant Magnetoresistive Sensors and Magnetic Labels for Chip-Scale Detection of Immunosorbent Assays

    Energy Technology Data Exchange (ETDEWEB)

    Rachel Lora Millen

    2005-12-17

    The combination of giant magnetoresistive sensors, magnetic labeling strategies, and biomolecule detection is just beginning to be explored. New readout methods and assay formats are necessary for biomolecules detection to flourish. The work presented in this dissertation describes steps toward the creation of a novel detection method for bioassays utilizing giant magnetoresistive sensors as the readout method. The introduction section contains a brief review of some of the current methods of bioassay readout. The theoretical underpinnings of the giant magnetoresistive effect are also discussed. Finally, the more prominent types of giant magnetoresistive sensors are described, as well as their complicated fabrication. Four data chapters follow the introduction; each chapter is presented as a separate manuscript, either already published or soon to be submitted. Chapter 1 presents research efforts toward the production of a bioassay on the surface of a gold-modified GMR sensor. The testing of this methodology involved the capture of goat a-mouse-coated magnetic nanoparticles on the mouse IgG-modified gold surface. The second, third and fourth chapters describe the utilization of a self-referenced sample stick for scanning across the GMR sensor. The sample stick consisted of alternating magnetic reference and bioactive gold addresses. Chapter 2 is concerned with the characterization of both the scanning readout method and the binding and detection of streptavidin-coated magnetic particles to a biotinylated surface. Chapter 3 advances the sample stick readout with the use of the system for detection of a sandwich immunoassay with rabbit IgG proteins. Finally, simultaneous detection of three IgG proteins is demonstrated in Chapter 4. The dissertation is concluded with a brief summary of the research presented and a discussion of the possible future applications and direction of this work.

  19. Configurational Statistics of Magnetic Bead Detection with Magnetoresistive Sensors

    DEFF Research Database (Denmark)

    Henriksen, Anders Dahl; Ley, Mikkel Wennemoes Hvitfeld; Flyvbjerg, Henrik;

    2015-01-01

    Magnetic biosensors detect magnetic beads that, mediated by a target, have bound to a functionalized area. This area is often larger than the area of the sensor. Both the sign and magnitude of the average magnetic field experienced by the sensor from a magnetic bead depends on the location of the...... essential to sensor design. For illustration, we analyze three important published cases for which statistical fluctuations are dominant, significant, and insignificant, respectively....

  20. Transport theory for disordered multiple-band systems: Anomalous Hall effect and anisotropic magnetoresistance

    Czech Academy of Sciences Publication Activity Database

    Kovalev, A.A.; Tserkovnyak, Y.; Výborný, Karel; Sinova, J.

    2009-01-01

    Roč. 79, č. 19 (2009), 19529/1-19529/19. ISSN 1098-0121 R&D Projects: GA MŠk LC510; GA AV ČR KJB100100802 Institutional research plan: CEZ:AV0Z10100521 Keywords : ferromagnetic materials * Hall effect * magnetoresistance * quasiparticles * spin-orbit interactions * two-dimensional electron gas Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.475, year: 2009 http://link.aps.org/doi/10.1103/PhysRevB.79.195129

  1. A giant magnetoresistance ring-sensor based microsystem for magnetic bead manipulation and detection

    KAUST Repository

    Gooneratne, Chinthaka P.

    2011-03-28

    In this paper a novel spin valvegiant magnetoresistance(GMR) ring-sensor integrated with a microstructure is proposed for concentrating, trapping, and detecting superparamagnetic beads (SPBs). Taking advantage of the fact that SPBs can be manipulated by an external magnetic field, a unique arrangement of conducting microrings is utilized to manipulate the SPBs toward the GMR sensing area in order to increase the reliability of detection. The microrings are arranged and activated in such a manner so as to enable the detection of minute concentrations of SPBs in a sample. Precise manipulation is achieved by applying current sequentially to the microrings. The fabricated ring-shaped GMR element is located underneath the innermost ring and has a magnetoresistance of approximately 5.9%. By the performed experiments it was shown that SPBs could be successfully manipulated toward the GMR sensing zone.

  2. Magnetic Field Sensors Based on Giant Magnetoresistance (GMR Technology: Applications in Electrical Current Sensing

    Directory of Open Access Journals (Sweden)

    Càndid Reig

    2009-10-01

    Full Text Available The 2007 Nobel Prize in Physics can be understood as a global recognition to the rapid development of the Giant Magnetoresistance (GMR, from both the physics and engineering points of view. Behind the utilization of GMR structures as read heads for massive storage magnetic hard disks, important applications as solid state magnetic sensors have emerged. Low cost, compatibility with standard CMOS technologies and high sensitivity are common advantages of these sensors. This way, they have been successfully applied in a lot different environments. In this work, we are trying to collect the Spanish contributions to the progress of the research related to the GMR based sensors covering, among other subjects, the applications, the sensor design, the modelling and the electronic interfaces, focusing on electrical current sensing applications.

  3. Magnetic Field Sensors Based on Giant Magnetoresistance (GMR) Technology: Applications in Electrical Current Sensing.

    Science.gov (United States)

    Reig, Candid; Cubells-Beltran, María-Dolores; Muñoz, Diego Ramírez

    2009-01-01

    The 2007 Nobel Prize in Physics can be understood as a global recognition to the rapid development of the Giant Magnetoresistance (GMR), from both the physics and engineering points of view. Behind the utilization of GMR structures as read heads for massive storage magnetic hard disks, important applications as solid state magnetic sensors have emerged. Low cost, compatibility with standard CMOS technologies and high sensitivity are common advantages of these sensors. This way, they have been successfully applied in a lot different environments. In this work, we are trying to collect the Spanish contributions to the progress of the research related to the GMR based sensors covering, among other subjects, the applications, the sensor design, the modelling and the electronic interfaces, focusing on electrical current sensing applications. PMID:22408486

  4. Low field anisotropic colossal magnetoresistance in Sm0.53Sr0.47MnO3 thin films

    Science.gov (United States)

    Srivastava, Manoj K.; Singh, M. P.; Kaur, Amarjeet; Razavi, F. S.; Singh, H. K.

    2011-12-01

    Sm0.53Sr0.47MnO3 (SSMO) thin films (thicknesses ˜200 nm) were deposited by on-axis dc magnetron sputtering on the single crystal LSAT (001) substrates. These films are oriented along the out of plane c-direction. The ferromagnetic and insulator-metal transition occurs at TC ˜ 96 and TIM ˜ 91 K, respectively. The magnetization easy axis is observed to lie in the plane of the film while the magnetic hard axis is found to be along the normal to this. The magnetotransport of the SSMO films, which was measured as a function of angle (θ) between the magnetic field (H) and plane of the film, shows colossal anisotropy. Magnetoresistance (MR) decreases drastically as θ increases from 0° (H//easy axis) to 90° (H//hard axis). The out-of-plane anisotropic MR is as high as 88% at H = 3.6 kOe and 78 K. The colossal anisotropy has been explained in terms of the magnetic anisotropies at play and the magnetic domain motion in applied magnetic field.

  5. Nanoparticle-Structured Highly Sensitive and Anisotropic Gauge Sensors.

    Science.gov (United States)

    Zhao, Wei; Luo, Jin; Shan, Shiyao; Lombardi, Jack P; Xu, Yvonne; Cartwright, Kelly; Lu, Susan; Poliks, Mark; Zhong, Chuan-Jian

    2015-09-16

    The ability to tune gauge factors in terms of magnitude and orientation is important for wearable and conformal electronics. Herein, a sensor device is described which is fabricated by assembling and printing molecularly linked thin films of gold nanoparticles on flexible microelectrodes with unusually high and anisotropic gauge factors. A sharp difference in gauge factors up to two to three orders of magnitude between bending perpendicular (B(⊥)) and parallel (B(||)) to the current flow directions is observed. The origin of the unusual high and anisotropic gauge factors is analyzed in terms of nanoparticle size, interparticle spacing, interparticle structure, and other parameters, and by considering the theoretical aspects of electron conduction mechanism and percolation pathway. A critical range of resistivity where a very small change in strain and the strain orientation is identified to impact the percolation pathway in a significant way, leading to the high and anisotropic gauge factors. The gauge anisotropy stems from molecular and nanoscale fine tuning of interparticle properties of molecularly linked nanoparticle assembly on flexible microelectrodes, which has important implication for the design of gauge sensors for highly sensitive detection of deformation in complex sensing environment or on complex curved surfaces such as wearable electronics and skin sensors. PMID:26037089

  6. Development of a Magneto-Resistive Angular Position Sensor for Space Mechanisms

    Science.gov (United States)

    Hahn, Robert; Schmidt, Tilo; Seifart, Klaus; Olberts, Bastian; Romera, Fernando

    2016-01-01

    Magnetic microsystems in the form of magneto-resistive (MR) sensors are firmly established in automobiles and industrial applications. They are used to measure travel, angle, electrical current, or magnetic fields. MR technology opens up new sensor possibilities in space applications and can be an enabling technology for optimal performance, high robustness and long lifetime at reasonable costs. In some science missions, the technology is already applied, however, the designs are proprietary and case specific, for instance in case of the angular sensors used for JPL/NASA's Mars rover Curiosity [1]. Since 2013 HTS GmbH and Sensitec GmbH have teamed up to develop and qualify a standardized yet flexible to use MR angular sensor for space mechanisms. Starting with a first assessment study and market survey performed under ESA contract, a very strong industry interest in novel, contactless position measurement means was found. Currently a detailed and comprehensive development program is being performed by HTS and Sensitec. The objective of this program is to advance the sensor design up to Engineering Qualification Model level and to perform qualification testing for a representative space application. The paper briefly reviews the basics of magneto-resistive effects and possible sensor applications and describes the key benefits of MR angular sensors with reference to currently operational industrial and space applications. The key applications and specification are presented and the preliminary baseline mechanical and electrical design will be discussed. An outlook on the upcoming development and test stages as well as the qualification program will be provided.

  7. Fabrication of micro accelerometer and magnetoresistive sensor directly on a ceramic substrate

    International Nuclear Information System (INIS)

    Micro-electro-mechanical systems (MEMS) sensors have movable parts: thus, it is difficult to handle them at fabrication because of the possibility of fracture. If a MEMS sensor could be fabricated not only on a silicon substrate but also on a ceramic substrate, which can be used for a package of the end product, the above-mentioned problem about handling would be solved, and its fabrication cost would be reduced. In this presentation, as demonstrations of the sensors directly fabricated on a ceramic package, an accelerometer and a magnetoresistive (MR) sensor are focused on. A micro accelerometer is proposed, which consists of a proof mass and ferroelectric substrate under it. A screen-printed barium titanate (BTO) film on an alumina substrate was employed as ferroelectrics. The sensitivity of the fabricated accelerometer was 0.1 pF g−1. A triaxis MR sensor is proposed, which detects not only x- and y-axes' magnetic field intensities but also that of the z-axis. Namely, not only azimuth but also angle of elevation of the sensor can be detected from triaxis components of the geomagnetic field. A permalloy (FeNi) plate is stood aside from the MR element. The plate distorts magnetic field and generates the x- (or y-) component from the originally z-directional field. A triaxis geomagnetic field was successfully detected by the fabricated sensor

  8. Magnetoresistive sensors for angle, position, and electrical current measurement in demanding environments

    Science.gov (United States)

    Doms, Marco; Slatter, Rolf

    2014-06-01

    Nowadays, magnetoresistive (MR) sensors are used in a wide range of applications. In general, the MR-effect describes the change of the electrical resistance in an external magnetic field. MR sensors are not only used for measuring magnetic fields and rotational or linear motion, but also for non-contact switching applications and furthermore for highly dynamic current measurement. This is largely the result of increasingly complex demands on the sensors for e.g. high performance electrical drives. The sensors must not only be accurate and dynamic, but must also be robust under difficult operating conditions and exhibit very high reliability. Due to their physical working principle and their small size, MR sensors are especially suited to work in harsh environments like high or low temperature, radiation, pressure or mechanical shock. This paper describes the principle of operation, manufacturing process and benefits of MR sensors. This will be followed by a description of practical application examples from the automotive, oil and gas, renewable energy and space fields, where MR sensors are successfully applied in very small envelopes at very low /very high temperatures, under high pressure, high mechanical loading and under strong radiation.

  9. Giant Magnetoresistance Sensors: A Review on Structures and Non-Destructive Eddy Current Testing Applications.

    Science.gov (United States)

    Rifai, Damhuji; Abdalla, Ahmed N; Ali, Kharudin; Razali, Ramdan

    2016-01-01

    Non-destructive eddy current testing (ECT) is widely used to examine structural defects in ferromagnetic pipe in the oil and gas industry. Implementation of giant magnetoresistance (GMR) sensors as magnetic field sensors to detect the changes of magnetic field continuity have increased the sensitivity of eddy current techniques in detecting the material defect profile. However, not many researchers have described in detail the structure and issues of GMR sensors and their application in eddy current techniques for nondestructive testing. This paper will describe the implementation of GMR sensors in non-destructive testing eddy current testing. The first part of this paper will describe the structure and principles of GMR sensors. The second part outlines the principles and types of eddy current testing probe that have been studied and developed by previous researchers. The influence of various parameters on the GMR measurement and a factor affecting in eddy current testing will be described in detail in the third part of this paper. Finally, this paper will discuss the limitations of coil probe and compensation techniques that researchers have applied in eddy current testing probes. A comprehensive review of previous studies on the application of GMR sensors in non-destructive eddy current testing also be given at the end of this paper. PMID:26927123

  10. Giant Magnetoresistance Sensors: A Review on Structures and Non-Destructive Eddy Current Testing Applications

    Directory of Open Access Journals (Sweden)

    Damhuji Rifai

    2016-02-01

    Full Text Available Non-destructive eddy current testing (ECT is widely used to examine structural defects in ferromagnetic pipe in the oil and gas industry. Implementation of giant magnetoresistance (GMR sensors as magnetic field sensors to detect the changes of magnetic field continuity have increased the sensitivity of eddy current techniques in detecting the material defect profile. However, not many researchers have described in detail the structure and issues of GMR sensors and their application in eddy current techniques for nondestructive testing. This paper will describe the implementation of GMR sensors in non-destructive testing eddy current testing. The first part of this paper will describe the structure and principles of GMR sensors. The second part outlines the principles and types of eddy current testing probe that have been studied and developed by previous researchers. The influence of various parameters on the GMR measurement and a factor affecting in eddy current testing will be described in detail in the third part of this paper. Finally, this paper will discuss the limitations of coil probe and compensation techniques that researchers have applied in eddy current testing probes. A comprehensive review of previous studies on the application of GMR sensors in non-destructive eddy current testing also be given at the end of this paper.

  11. Hall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor

    KAUST Repository

    Sun, Jian

    2012-06-06

    An extraordinary magnetoresistance (EMR) device with a 3-contact geometry has been fabricated and characterized. A large enhancement of the output sensitivity at low magnetic fields compared to the conventional EMR device has been found, which can be attributed to an additional influence coming from the Hall effect. Output sensitivities of 0.19 mV/T at zero-field and 0.2 mV/T at 0.01 T have been measured in the device, which is equivalent to the ones of the conventional EMR sensors with a bias of ∼0.04 T. The exceptional performance of EMR sensors in the high field region is maintained in the 3-contact device.

  12. An efficient biosensor made of an electromagnetic trap and a magneto-resistive sensor

    KAUST Repository

    Li, Fuquan

    2014-09-01

    Magneto-resistive biosensors have been found to be useful because of their high sensitivity, low cost, small size, and direct electrical output. They use super-paramagnetic beads to label a biological target and detect it via sensing the stray field. In this paper, we report a new setup for magnetic biosensors, replacing the conventional "sandwich" concept with an electromagnetic trap. We demonstrate the capability of the biosensor in the detection of E. coli. The trap is formed by a current-carrying microwire that attracts the magnetic beads into a sensing space on top of a tunnel magneto-resistive sensor. The sensor signal depends on the number of beads in the sensing space, which depends on the size of the beads. This enables the detection of biological targets, because such targets increase the volume of the beads. Experiments were carried out with a 6. μm wide microwire, which attracted the magnetic beads from a distance of 60. μm, when a current of 30. mA was applied. A sensing space of 30. μm in length and 6. μm in width was defined by the magnetic sensor. The results showed that individual E. coli bacterium inside the sensing space could be detected using super-paramagnetic beads that are 2.8. μm in diameter. The electromagnetic trap setup greatly simplifies the device and reduces the detection process to two steps: (i) mixing the bacteria with magnetic beads and (ii) applying the sample solution to the sensor for measurement, which can be accomplished within about 30. min with a sample volume in the μl range. This setup also ensures that the biosensor can be cleaned easily and re-used immediately. The presented setup is readily integrated on chips via standard microfabrication techniques. © 2014 Elsevier B.V.

  13. In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current

    International Nuclear Information System (INIS)

    We investigate the angular dependence of the tunneling anisotropic magnetoresistance in (Ga,Mn)As/n-GaAs spin Esaki diodes in the regime where the tunneling process is dominated by the excess current through midgap states in (Ga,Mn)As. We compare it to similar measurements performed in the regime of band-to-band tunneling. Whereas the latter show biaxial symmetry typical for magnetic anisotropy observed in (Ga,Mn)As samples, the former is dominated by uniaxial anisotropy along the 〈110〉 axes

  14. A current sensor based on the giant magnetoresistance effect: design and potential smart grid applications.

    Science.gov (United States)

    Ouyang, Yong; He, Jinliang; Hu, Jun; Wang, Shan X

    2012-01-01

    Advanced sensing and measurement techniques are key technologies to realize a smart grid. The giant magnetoresistance (GMR) effect has revolutionized the fields of data storage and magnetic measurement. In this work, a design of a GMR current sensor based on a commercial analog GMR chip for applications in a smart grid is presented and discussed. Static, dynamic and thermal properties of the sensor were characterized. The characterizations showed that in the operation range from 0 to ±5 A, the sensor had a sensitivity of 28 mV·A(-1), linearity of 99.97%, maximum deviation of 2.717%, frequency response of −1.5 dB at 10 kHz current measurement, and maximum change of the amplitude response of 0.0335%·°C(-1) with thermal compensation. In the distributed real-time measurement and monitoring of a smart grid system, the GMR current sensor shows excellent performance and is cost effective, making it suitable for applications such as steady-state and transient-state monitoring. With the advantages of having a high sensitivity, high linearity, small volume, low cost, and simple structure, the GMR current sensor is promising for the measurement and monitoring of smart grids. PMID:23202221

  15. Superparamagnetic nanoparticle quantification using a giant magnetoresistive sensor and permanent magnets

    International Nuclear Information System (INIS)

    Magnetic nanoparticles are used in various biological applications such as magnetic resonance imaging (MRI), biological separation, drug delivery or as biomarker. In the case of biomarker, the magnetic particle and a measurand are combined via biological reactions and then detected by magnetic field sensors for a qualitative or quantitative measurement. In the present work, we introduce a commercially available giant magnetoresistive (GMR) sensor for the quantitative measurement of superparamagnetic nanoparticles, which were injected into a glass capillary tube. A pair of permanent magnets standing diagonally opposite to each other was utilized to provide vertical and horizontal magnetic fields for particle magnetization and sensor bias, respectively. In addition, the permanent magnets solved the uniformity problem of generated magnetic fields in previous biomarker detection systems. Using the proposed measurement setup, an output signal change of 0.407 V was achieved for a 1 μg change in the magnetic particle mass. The detection limit was 43.5 ng. - Highlights: • We introduce a GMR sensor for the superparamagnetic nanoparticles quantification. • Permanent magnets were utilized for particle magnetization and sensor bias. • The system sensitivity was 0.407 V per 1 µg of particles. • The limit of detection was 43.5 ng

  16. Superparamagnetic nanoparticle quantification using a giant magnetoresistive sensor and permanent magnets

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jongwon, E-mail: skywalker03@gmail.com

    2015-09-01

    Magnetic nanoparticles are used in various biological applications such as magnetic resonance imaging (MRI), biological separation, drug delivery or as biomarker. In the case of biomarker, the magnetic particle and a measurand are combined via biological reactions and then detected by magnetic field sensors for a qualitative or quantitative measurement. In the present work, we introduce a commercially available giant magnetoresistive (GMR) sensor for the quantitative measurement of superparamagnetic nanoparticles, which were injected into a glass capillary tube. A pair of permanent magnets standing diagonally opposite to each other was utilized to provide vertical and horizontal magnetic fields for particle magnetization and sensor bias, respectively. In addition, the permanent magnets solved the uniformity problem of generated magnetic fields in previous biomarker detection systems. Using the proposed measurement setup, an output signal change of 0.407 V was achieved for a 1 μg change in the magnetic particle mass. The detection limit was 43.5 ng. - Highlights: • We introduce a GMR sensor for the superparamagnetic nanoparticles quantification. • Permanent magnets were utilized for particle magnetization and sensor bias. • The system sensitivity was 0.407 V per 1 µg of particles. • The limit of detection was 43.5 ng.

  17. High field magnetoresistance of UFe4Al8

    International Nuclear Information System (INIS)

    Magnetoresistance measurements up to 16 T on UFe4Al8 single crystal are reported. The results show a strong anisotropic magnetoresistance. The normal magnetoresistance is always negative. No new phase transition has been detected up to 16 T. (orig.)

  18. Investigation of contactless detection using a giant magnetoresistance sensor for detecting prostate specific antigen.

    Science.gov (United States)

    Sun, Xuecheng; Zhi, Shaotao; Lei, Chong; Zhou, Yong

    2016-08-01

    This paper presents a contactless detection method for detecting prostate specific antigen with a giant magnetoresistance sensor. In contactless detection case, the prostate specific antigen sample preparation was separated from the sensor that prevented the sensor from being immersed in chemical solvents, and made the sensor implementing in immediately reuse without wash. Experimental results showed that applied an external magnetic field in a range of 50 Oe to 90 Oe, Dynabeads with a concentration as low as 0.1 μg/mL can be detected by this system and could give an approximate quantitation to the logarithmic of Dynabeads concentration. Sandwich immunoassay was employed for preparing PSA samples. The PSA capture was implemented on a gold film modified with a self-assembled monolayer and using biotinylated secondary antibody against PSA and streptavidinylated Dynabeads. With DC magnetic field in the range of 50 to 90 Oe, PSA can be detected with a detection limit as low as 0.1 ng/mL. Samples spiked with different concentrations of PSA can be distinguished clearly. Due to the contactless detection method, the detection system exhibited advantages such as convenient manipulation, reusable, inexpensive, small weight. So, this detection method was a promising candidate in biomarker detection, especially in point of care detection. PMID:27379844

  19. Giant magnetoresistance (GMR) sensors from basis to state-of-the-art applications

    CERN Document Server

    Reig, Candid; Mukhopadhyay, Subhas Chandra

    2013-01-01

    Since the discovery of the giant magnetoresistance (GMR) effect in 1988, spintronics has been presented as a new technology paradigm, awarded by the Nobel Prize in Physics in 2007. Initially used in read heads of hard disk drives, and while disputing a piece of the market to the flash memories, GMR devices have broadened their range of usage by growing towards magnetic field sensing applications in a huge range of scenarios. Potential applications at the time of the discovery have become real in the last two decades. Definitively, GMR was born to stand. In this sense, selected successful approaches of GMR based sensors in different applications: space, automotive, microelectronics, biotechnology … are collected in the present book. While keeping a practical orientation, the fundamentals as well as the current trends and challenges of this technology are also analyzed. In this sense, state of the art contributions from academy and industry can be found through the contents. This book can be used by starting ...

  20. Localization for the Non-Invasive Detecting Capsule in GI Tract Utilizing Permanent Magnet and Magnetoresistive Sensors

    Institute of Scientific and Technical Information of China (English)

    HE Wen-hui; YAN Guo-zheng; GUO Xu-dong

    2007-01-01

    The paper reports the localization principle and method for the capsule in the non-invasive detecting system of gastrointestinal (GI) tract utilizing one permanent and three magnetoresistive sensors. When the capsule is localized in practice, the permanent magnet is fixed inside the capsule, and the four magnetoresistive sensors are installed outside body. The permanent magnet's coordinate values can be solved by the magnetic dipole theory and optimum iterated method. The experiment shows the localization distance can reach 300 mm by employing the HMCI023 magnetoresistive sensors and the NdFeB45 φ9 mm × 5 mm permanent magnet, and the errors of single coordinate direction and radius vector are 0 - 58 mm and 0.1-62.9 mm respectively. The localization precision is acceptable basically, and it has some possibilities improving the precision and distance in the future. Moreover, the localization system makes the localization be reality because of decreasing the number of sensors, and it economizes the capsule's volume because of decreasing the permanent magnet's dimension, too.

  1. Magnetoresistance sensitivity mapping of the localized response of contiguous and lead-overlaid sensors

    International Nuclear Information System (INIS)

    Magnetoresistance sensitivity mapping (MSM) was used to investigate the local response of magnetic recording sensors without convolution of the writer, magnetic media and data channel. From a 2D map of the local sensor response, the intrinsic pulse shape and magnetic track profile are readily obtained. Pulse-width is a concern for high data rate since if pulse-width is too broad, individual transitions become difficult to distinguish. Track profiles are important because due to the small difference between magnetic write-width and magnetic read-width, side reading will lead to an increase in noise. Three experiments are discussed: the dependence of the pulse-width (PW50) of the standard contiguous junction (CJ) design on shield-to-shield spacing; a comparison of the pulse shape of lead-overlaid (LOL) and CJ designs; and a comparison of the magnetic track profile (including track-width and skirt ratio) of LOL and CJ designs. The LOL design offers an increased sensitivity; however, as seen from MSM, the penalties are broadening of the track and pulse profiles. These are a direct result of the finite current in the lead overlay region and an increased shield-to-shield spacing in that region. The MSM image shows a curvature, which is associated with the topography of the top shield due to the lead overlay

  2. Anisotropic magnetoresistance of individual CoFeB and Ni nanotubes with values of up to 1.4% at room temperature

    Directory of Open Access Journals (Sweden)

    Daniel Rüffer

    2014-07-01

    Full Text Available Magnetic nanotubes (NTs are interesting for magnetic memory and magnonic applications. We report magnetotransport experiments on individual 10 to 20 μm long Ni and CoFeB NTs with outer diameters ranging from 160 to 390 nm and film thicknesses of 20 to 40 nm. The anisotropic magnetoresistance (AMR effect studied from 2 K to room temperature (RT amounted to 1.4% and 0.1% for Ni and CoFeB NTs, respectively, at RT. We evaluated magnetometric demagnetization factors of about 0.7 for Ni and CoFeB NTs having considerably different saturation magnetization. The relatively large AMR value of the Ni nanotubes is promising for RT spintronic applications. The large saturation magnetization of CoFeB is useful in different fields such as magnonics and scanning probe microscopy using nanotubes as magnetic tips.

  3. The Front-End Readout as an Encoder IC for Magneto-Resistive Linear Scale Sensors.

    Science.gov (United States)

    Tran, Trong-Hieu; Chao, Paul Chang-Po; Chien, Ping-Chieh

    2016-01-01

    This study proposes a front-end readout circuit as an encoder chip for magneto-resistance (MR) linear scales. A typical MR sensor consists of two major parts: one is its base structure, also called the magnetic scale, which is embedded with multiple grid MR electrodes, while another is an "MR reader" stage with magnets inside and moving on the rails of the base. As the stage is in motion, the magnetic interaction between the moving stage and the base causes the variation of the magneto-resistances of the grid electrodes. In this study, a front-end readout IC chip is successfully designed and realized to acquire temporally-varying resistances in electrical signals as the stage is in motions. The acquired signals are in fact sinusoids and co-sinusoids, which are further deciphered by the front-end readout circuit via newly-designed programmable gain amplifiers (PGAs) and analog-to-digital converters (ADCs). The PGA is particularly designed to amplify the signals up to full dynamic ranges and up to 1 MHz. A 12-bit successive approximation register (SAR) ADC for analog-to-digital conversion is designed with linearity performance of ±1 in the least significant bit (LSB) over the input range of 0.5-2.5 V from peak to peak. The chip was fabricated by the Taiwan Semiconductor Manufacturing Company (TSMC) 0.35-micron complementary metal oxide semiconductor (CMOS) technology for verification with a chip size of 6.61 mm², while the power consumption is 56 mW from a 5-V power supply. The measured integral non-linearity (INL) is -0.79-0.95 LSB while the differential non-linearity (DNL) is -0.68-0.72 LSB. The effective number of bits (ENOB) of the designed ADC is validated as 10.86 for converting the input analog signal to digital counterparts. Experimental validation was conducted. A digital decoder is orchestrated to decipher the harmonic outputs from the ADC via interpolation to the position of the moving stage. It was found that the displacement measurement error is within

  4. The Front-End Readout as an Encoder IC for Magneto-Resistive Linear Scale Sensors

    Directory of Open Access Journals (Sweden)

    Trong-Hieu Tran

    2016-09-01

    Full Text Available This study proposes a front-end readout circuit as an encoder chip for magneto-resistance (MR linear scales. A typical MR sensor consists of two major parts: one is its base structure, also called the magnetic scale, which is embedded with multiple grid MR electrodes, while another is an “MR reader” stage with magnets inside and moving on the rails of the base. As the stage is in motion, the magnetic interaction between the moving stage and the base causes the variation of the magneto-resistances of the grid electrodes. In this study, a front-end readout IC chip is successfully designed and realized to acquire temporally-varying resistances in electrical signals as the stage is in motions. The acquired signals are in fact sinusoids and co-sinusoids, which are further deciphered by the front-end readout circuit via newly-designed programmable gain amplifiers (PGAs and analog-to-digital converters (ADCs. The PGA is particularly designed to amplify the signals up to full dynamic ranges and up to 1 MHz. A 12-bit successive approximation register (SAR ADC for analog-to-digital conversion is designed with linearity performance of ±1 in the least significant bit (LSB over the input range of 0.5–2.5 V from peak to peak. The chip was fabricated by the Taiwan Semiconductor Manufacturing Company (TSMC 0.35-micron complementary metal oxide semiconductor (CMOS technology for verification with a chip size of 6.61 mm2, while the power consumption is 56 mW from a 5-V power supply. The measured integral non-linearity (INL is −0.79–0.95 LSB while the differential non-linearity (DNL is −0.68–0.72 LSB. The effective number of bits (ENOB of the designed ADC is validated as 10.86 for converting the input analog signal to digital counterparts. Experimental validation was conducted. A digital decoder is orchestrated to decipher the harmonic outputs from the ADC via interpolation to the position of the moving stage. It was found that the displacement

  5. Coulomb blockade anisotropic magnetoresistance and voltage controlled magnetic switching in a ferromagnetic GaMnAs single electron transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Irvine, A.C.; Kaestner, B.; Shick, Alexander; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2007-01-01

    Roč. 310, - (2007), s. 1883-1888. ISSN 0304-8853 R&D Projects: GA ČR GA202/05/0575; GA MŠk LC510; GA ČR GEFON/06/E002 Grant ostatní: NANOSPIN(XE) FP6-2002-IST-015728 Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * magnetoresistance * single-electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2007

  6. Giant magnetoresistive sensor array for sensitive and specific multiplexed food allergen detection.

    Science.gov (United States)

    Ng, Elaine; Nadeau, Kari C; Wang, Shan X

    2016-06-15

    Current common allergen detection methods, including enzyme-linked immunosorbent assays (ELISAs) and dip-stick methods, do not provide adequate levels of sensitivity and specificity for at-risk allergic patients. A method for performing highly sensitive and specific detection of multiple food allergens is thus imperative as food allergies are becoming increasingly recognized as a major healthcare concern, affecting an estimated 4% of the total population. We demonstrate first instance of sensitive and specific multiplexed detection of major peanut allergens Ara h 1 and Ara h 2, and wheat allergen Gliadin using giant magnetoresistive (GMR) sensor arrays. Commercialized ELISA kits for Ara h 1 and Ara h 2 report limits of detection (LODs) at 31.5ng/mL and 0.2ng/mL, respectively. In addition, the 96-well-based ELISA developed in-house for Gliadin was found to have a LOD of 40ng/mL. Our multiplexed GMR-based assay demonstrates the ability to perform all three assays on the same chip specifically and with sensitivities at LODs about an order of magnitude lower than those of 96-well-based ELISAs. LODs of GMR-based assays developed for Ara h 1, Ara h 2, and Gliadin were 7.0ng/mL, 0.2ng/mL, and 1.5ng/mL, respectively, with little to no cross-reactivity. These LODs are clinically important as some patients could react strongly against such low allergen levels. Given the limitations of current industrial detection technology, multiplexed GMR-based assays provide a method for highly sensitive and specific simultaneous detection of any combination of food-product allergens, thus protecting allergic patients from life-threatening events, including anaphylaxis, by unintentional consumption. PMID:26859787

  7. A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer

    KAUST Repository

    Sun, Jian

    2013-04-01

    An extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment are required, this design is not only easier from a technological point of view, but it also has the potential to reduce damage introduced to the semiconductor during fabrication. The device shows a similar magnetoresistance ratio as a conventional one but it has a lower sensitivity. Because of the reduced resistance, and hence less noise, high magnetic field resolution is maintained. © 1980-2012 IEEE.

  8. Anisotropic magnetoresistance in the organic superconductor βdouble-prime-(BEDT-TTF)2SF5CH2CF2SO3

    International Nuclear Information System (INIS)

    In this paper, we report transport measurements of interlayer magnetoresistance with field parallel and perpendicular to the current direction in an all organic superconductor βdouble-prime-(BEDT-TTF)2SF5CH2CF2SO3. For H parallel I, the isothermal magnetoresistance R(H) at low temperatures (T≤Tc) displays a peak effect as a function of field. For H perpendicular I, R(H) increases monotonically with increasing field. The results are very analogous to the interlayer magnetoresistance in κ-(BEDT-TTF)2X compounds. The observation of the peak effect or negative magnetoresistance in different systems for H parallel I perpendicular plane suggests that it is intrinsic to the layered organic superconductors. For H perpendicular I, the large positive magnetoresistance is in a general agreement with a two band model for charge transport. copyright 1999 The American Physical Society

  9. Optimization of an extraordinary magnetoresistance sensor in the semiconductor-metal hybrid structure

    KAUST Repository

    Sun, Jian

    2010-11-01

    The purpose of this paper is to show by numerical computation how geometric parameters influence the Extraordinary Magnetoresistance (EMR) effect in an InAs-Au hybrid device. Symmetric IVVI and VIIV configurations were considered. The results show that the width and the length-width ratio of InAs are important geometrical parameters for the EMR effect along with the placement of the leads. Approximately the same EMR effect was obtained for both IVVI and VIIV configurations when the applied magnetic field ranged from -1T to 1T. In an optimized geometry the EMR effect can reach 43000% at 1Tesla for IVVI and 42700% at 1 Tesla for the VIIV configuration. ©2010 IEEE.

  10. Magnetization reversal signatures in the magnetoresistance of magnetic multilayers

    OpenAIRE

    Prieto Martin, Jose Luis; Romera Rabasa, Miguel; Akerman, Johanna; Perna, Paolo; Rodrigo, C.; Muñoz, Manuel; Bollero, Alberto; Maccariello, Davide; Fernández Cuñado, José Luis; E. Jiménez; Mikuszeit, Nikolai; Cros, Vincent; Camarero, Julio; Miranda, Rodolfo

    2012-01-01

    The simultaneous determination of magnetoresistance and vectorial-resolved magnetization hysteresis curves in a spin valve structure reveals distinct magnetoresistive features for different magnetic field orientations, which are directly related to the magnetization reversal processes. Measurements performed in the whole angular range demonstrate that the magnetoresistive response originates from the intrinsic anisotropic angular dependence of the magnetization orientation between the two fer...

  11. Controlled trapping and detection of magnetic particles by a magnetic microactuator and a giant magnetoresistance (GMR) sensor

    KAUST Repository

    Giouroudi, Ioanna

    2014-04-01

    This paper presents the design and testing of an integrated micro-chip for the controlled trapping and detection of magnetic particles (MPs). A unique magnetic micro-actuator consisting of square-shaped conductors is used to manipulate the MPs towards a giant magnetoresistance (GMR) sensing element which rapidly detects the majority of MPs trapped around the square-shaped conductors. The ability to precisely transport a small number of MPs in a controlled manner over long distances by magnetic forces enables the rapid concentration of a majority of MPs to the sensing zone for detection. This is especially important in low concentration samples. The conductors are designed in such a manner so as to increase the capture efficiency as well as the precision and speed of transportation. By switching current to different conductors, MPs can be manipulated and immobilized on the innermost conductor where the GMR sensor is located. This technique rapidly guides the MPs towards the sensing zone. Secondly, for optimum measurement capability with high spatial resolution the GMR sensor is fabricated directly underneath and all along the innermost conductor to detect the stray fields originating from the MPs. Finally, a microfluidic channel is fabricated on top of this micro-chip. Experiments inside the microchannel were carried out and the MPs were successfully trapped at the sensing area. © (2014) Trans Tech Publications.

  12. Tunable three-axis magnetoresistance sensor with a spin-polarised current

    Science.gov (United States)

    Chang, Jui-Hang; Chang, Ching-Ray

    2015-10-01

    A three-axis magnetic tunnel junction sensor with three ferromagnetic layers to achieve a linear and hysteresis-free response is proposed and studied analytically. We show that the orientation of the easy axis of the sensor and the sensitivity are tunable by changing the density of a injected spin-polarised current. Additionally, the sensors integrated in a full Wheatstone bridge can have perpendicular and transverse sensing capability in different initial magnetisation arrangements. A value of 0.35% TMR/Oe is observed in sensing the perpendicular field. These findings indicate that a three-axis sensor can be fabricated more easily on a flat substrate.

  13. Significant manipulation of output performance of a bridge-structured spin valve magnetoresistance sensor via an electric field

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yue; Yan, Baiqian; Ou-Yang, Jun; Zhu, Benpeng; Chen, Shi; Yang, Xiaofei, E-mail: hust-yangxiaofei@163.com [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wang, Xianghao [School of Information Engineering, Wuhan University of Technology, Wuhan 430070 (China)

    2016-01-28

    Through principles of spin-valve giant magnetoresistance (SV-GMR) effect and its application in magnetic sensors, we have investigated electric-field control of the output performance of a bridge-structured Co/Cu/NiFe/IrMn SV-GMR sensor on a PZN-PT piezoelectric substrate using the micro-magnetic simulation. We centered on the influence of the variation of uniaxial magnetic anisotropy constant (K) of Co on the output of the bridge, and K was manipulated via the stress of Co, which is generated from the strain of a piezoelectric substrate under an electric field. The results indicate that when K varies between 2 × 10{sup 4 }J/m{sup 3} and 10 × 10{sup 4 }J/m{sup 3}, the output performance can be significantly manipulated: The linear range alters from between −330 Oe and 330 Oe to between −650 Oe and 650 Oe, and the sensitivity is tuned by almost 7 times, making it possible to measure magnetic fields with very different ranges. According to the converse piezoelectric effect, we have found that this variation of K can be realized by applying an electric field with the magnitude of about 2–20 kV/cm on a PZN-PT piezoelectric substrate, which is realistic in application. This result means that electric-control of SV-GMR effect has potential application in developing SV-GMR sensors with improved performance.

  14. Significant manipulation of output performance of a bridge-structured spin valve magnetoresistance sensor via an electric field

    International Nuclear Information System (INIS)

    Through principles of spin-valve giant magnetoresistance (SV-GMR) effect and its application in magnetic sensors, we have investigated electric-field control of the output performance of a bridge-structured Co/Cu/NiFe/IrMn SV-GMR sensor on a PZN-PT piezoelectric substrate using the micro-magnetic simulation. We centered on the influence of the variation of uniaxial magnetic anisotropy constant (K) of Co on the output of the bridge, and K was manipulated via the stress of Co, which is generated from the strain of a piezoelectric substrate under an electric field. The results indicate that when K varies between 2 × 104 J/m3 and 10 × 104 J/m3, the output performance can be significantly manipulated: The linear range alters from between −330 Oe and 330 Oe to between −650 Oe and 650 Oe, and the sensitivity is tuned by almost 7 times, making it possible to measure magnetic fields with very different ranges. According to the converse piezoelectric effect, we have found that this variation of K can be realized by applying an electric field with the magnitude of about 2–20 kV/cm on a PZN-PT piezoelectric substrate, which is realistic in application. This result means that electric-control of SV-GMR effect has potential application in developing SV-GMR sensors with improved performance

  15. Noise in small magnetic systems-applications to very sensitive magnetoresistive sensors

    Energy Technology Data Exchange (ETDEWEB)

    Pannetier, M. [CAPMAG/DRECAM, CEA Saclay 91191 Gif-sur-Yvette Cedex (France)]. E-mail: mpannetier@cea.fr; Fermon, C. [CAPMAG/DRECAM, CEA Saclay 91191 Gif-sur-Yvette Cedex (France); Le Goff, G. [CAPMAG/DRECAM, CEA Saclay 91191 Gif-sur-Yvette Cedex (France); Simola, J. [Elekta Neuromag Oy, P.O. Box 68, FIN-00511 Helsinki (Finland); Kerr, E. [SFI-Nanosciences Laboratory, Physics Department, Trinity College, Dublin 2 (Ireland); Coey, J.M.D. [SFI-Nanosciences Laboratory, Physics Department, Trinity College, Dublin 2 (Ireland)

    2005-04-15

    Reduction for 1/f noise (or random telegraph noise) is a crucial issue for small magnetic sensors which is strongly related to structural properties and magnetic configuration. We show how it is possible to eliminate magnetic noise at low frequency in GMR/TMR sensors by a combination of cross anisotropies, window frame shapes and suitably designed magnetoresisitive stack. These sensors are superior to almost all existing field and flux sensors. Results are presented on a mixed sensor, where a superconducting loop acts as a flux-to-field transformer to the GMR sensor. This device is suitable for detection of biomagnetic signals, such as in magnetocardiography or in magnetoencephalography. Measurements on niobium-based and YBCO-based sensors are presented, leading to sensitivity of 30 fT/{radical}Hz at 77 K for small samples. Sensitivity lower than 1 fT/{radical}(Hz) is expected with appropriate design and use of TMR or CMR layers, which makes these a powerful alternative to SQUIDs.

  16. Finite element analysis on the influence of contact resistivity in an extraordinary magnetoresistance magnetic field micro sensor

    KAUST Repository

    Sun, Jian

    2011-08-06

    In this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface between the InSb and Au, which suffers from a certain contact resistivity. The Finite Element Method (FEM) was employed to simulate the current redistribution in the device, under an applied magnetic field. Specifically, the influence of the contact resistivity between the InSb bulk and Au shunt was studied. In a device with optimized geometry and without contact resistivity between the layers of InSb and Au, the EMR effect and the sensitivity show values of 1.89 × 104% and 0.02%/(10-4 T), respectively, at 1 Tesla. For values of contact resistivity up to 10-8cm2 the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does not decrease until 5 × 10-6 cm2 of contact resistivity. Only beyond this value the sensitivity, which in most cases is associated with the performance of the device, will deteriorate. © Springer Science+Business Media, LLC 2011.

  17. Optimization of the extraordinary magnetoresistance in semiconductor-metal hybrid structures for magnetic-field sensor applications

    OpenAIRE

    Holz, M; Kronenwerth, O.; Grundler, D.

    2003-01-01

    Semiconductor-metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. In this paper, we analyze this effect by means of a model based on the finite element method and compare our results with experimental data. In particular, we investigate the important effect of the contact resistance $\\rho_c$ between the semiconductor and the metal on the EMR effect. Introducing a realistic $\\rho_c=3.5\\times 10^{-7} ...

  18. Magnetoresistance of electrodeposited NiFeCu alloys

    Energy Technology Data Exchange (ETDEWEB)

    Esmaili, S., E-mail: esmaili@shirazu.ac.ir [Department of Materials Science and Engineering, School of Engineering, Shiraz University, Shiraz (Iran, Islamic Republic of); Bahrololoom, M.E. [Department of Materials Science and Engineering, School of Engineering, Shiraz University, Shiraz (Iran, Islamic Republic of); Peter, L. [Research Institute for Solid State Physics and Optics, Hungarian Academy of Sciences, Budapest (Hungary)

    2012-01-01

    NiFeCu alloy films were electrodeposited from baths containing nickel sulfate and/or nickel sulfamate. All samples were pulse plated in the potentiostatic mode. The room temperature magnetoresistances of the films were measured showing anisotropic magnetoresistances up to 1.5%. The anisotropic magnetoresistances increased with the addition of sulfamic acid to the sulfate bath. Samples deposited from the bath with high sulfamate concentration showed a giant magnetoresistance behavior. To characterize the films, scanning electron microscopy and X-ray diffraction were used.

  19. Magnetoresistive magnetometer for space science applications

    International Nuclear Information System (INIS)

    Measurement of the in situ dc magnetic field on space science missions is most commonly achieved using instruments based on fluxgate sensors. Fluxgates are robust, reliable and have considerable space heritage; however, their mass and volume are not optimized for deployment on nano or picosats. We describe a new magnetometer design demonstrating science measurement capability featuring significantly lower mass, volume and to a lesser extent power than a typical fluxgate. The instrument employs a sensor based on anisotropic magnetoresistance (AMR) achieving a noise floor of less than 50 pT Hz−1/2 above 1 Hz on a 5 V bridge bias. The instrument range is scalable up to ±50 000 nT and the three-axis sensor mass and volume are less than 10 g and 10 cm3, respectively. The ability to switch the polarization of the sensor's easy axis and apply magnetic feedback is used to build a driven first harmonic closed loop system featuring improved linearity, gain stability and compensation of the sensor offset. A number of potential geospace applications based on the initial instrument results are discussed including attitude control systems and scientific measurement of waves and structures in the terrestrial magnetosphere. A flight version of the AMR magnetometer will fly on the TRIO-CINEMA mission due to be launched in 2012. (paper)

  20. Microscopic origin of magnetoresistance

    Directory of Open Access Journals (Sweden)

    Christian Heiliger

    2006-11-01

    Full Text Available Tunneling magnetoresistance is one of the basic effects of spintronics with the potential for applications in sensors and IT, where the spin degree of freedom of electrons is exploited. Successful application requires control of the materials and processes involved on the atomic scale. To support experimental developments, predict new materials, and optimize the effect, first-principle electronic structure calculations based on density functional theory are the most powerful tool. The method gives an insight into the microscopic origin of spin-dependent tunneling. The main components of a planar tunnel junction – barrier, leads, and their interface – and their specific role for tunneling magnetoresistance are discussed for one of the standard systems, Fe/MgO/Fe.

  1. Evaluation of magnetic flux distribution from magnetic domains in [Co/Pd] nanowires by magnetic domain scope method using contact-scanning of tunneling magnetoresistive sensor

    Energy Technology Data Exchange (ETDEWEB)

    Okuda, Mitsunobu, E-mail: okuda.m-ky@nhk.or.jp; Miyamoto, Yasuyoshi; Miyashita, Eiichi; Hayashi, Naoto [NHK Science and Technology Research Laboratories, 1-10-11 Kinuta Setagaya, Tokyo 157-8510 (Japan)

    2014-05-07

    Current-driven magnetic domain wall motions in magnetic nanowires have attracted great interests for physical studies and engineering applications. The magnetic force microscope (MFM) is widely used for indirect verification of domain locations in nanowires, where relative magnetic force between the local domains and the MFM probe is used for detection. However, there is an occasional problem that the magnetic moments of MFM probe influenced and/or rotated the magnetic states in the low-moment nanowires. To solve this issue, the “magnetic domain scope for wide area with nano-order resolution (nano-MDS)” method has been proposed recently that could detect the magnetic flux distribution from the specimen directly by scanning of tunneling magnetoresistive field sensor. In this study, magnetic domain structure in nanowires was investigated by both MFM and nano-MDS, and the leakage magnetic flux density from the nanowires was measured quantitatively by nano-MDS. Specimen nanowires consisted from [Co (0.3)/Pd (1.2)]{sub 21}/Ru(3) films (units in nm) with perpendicular magnetic anisotropy were fabricated onto Si substrates by dual ion beam sputtering and e-beam lithography. The length and the width of the fabricated nanowires are 20 μm and 150 nm. We have succeeded to obtain not only the remanent domain images with the detection of up and down magnetizations as similar as those by MFM but also magnetic flux density distribution from nanowires directly by nano-MDS. The obtained value of maximum leakage magnetic flux by nano-MDS is in good agreement with that of coercivity by magneto-optical Kerr effect microscopy. By changing the protective diamond-like-carbon film thickness on tunneling magnetoresistive sensor, the three-dimensional spatial distribution of leakage magnetic flux could be evaluated.

  2. Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3

    International Nuclear Information System (INIS)

    We have studied angle dependent magnetoresistance of Bi2Te3 thin film with field up to 9 T over 2–20 K temperatures. The perpendicular field magnetoresistance has been explained by the Hikami-Larkin-Nagaoka theory alone in a system with strong spin-orbit coupling, from which we have estimated the mean free path, the phase coherence length, and the spin-orbit relaxation time. We have obtained the out-of-plane spin-orbit relaxation time to be small and the in-plane spin-orbit relaxation time to be comparable to the momentum relaxation time. The estimation of these charge and spin transport parameters are useful for spintronics applications. For parallel field magnetoresistance, we have confirmed the presence of Zeeman effect which is otherwise suppressed in perpendicular field magnetoresistance due to strong spin-orbit coupling. The parallel field data have been explained using both the contributions from the Maekawa-Fukuyama localization theory for non-interacting electrons and Lee-Ramakrishnan theory of electron-electron interactions. The estimated Zeeman g-factor and the strength of Coulomb screening parameter agree well with the theory. Finally, the anisotropy in magnetoresistance with respect to angle has been described by the Hikami-Larkin-Nagaoka theory. This anisotropy can be used in anisotropic magnetic sensor applications.

  3. Dynamic detection of ferrofluid with giant magnetoresistance sensor%巨磁电阻传感器对铁磁流体的动态检测

    Institute of Scientific and Technical Information of China (English)

    石海平; 冯洁; 陈翔; 李福泉

    2011-01-01

    A giant magnetoresistance ( GMR) sensor with integrated microfludic channel was studied for the dynamic detection of ferrofluid. The microfludic channel is integrated by SU-8 glue and PDMS bonding. The ferrofluid is a 10 nm Fe3 O4 suspension. The dynamic detection is carried out by directly measuring the fringe fields generated from superparamagnetic beads when the ferrofluid passes the active sensing area of a GMR sensor. To maximizing the detection sensitivity, the effect of the applied magnetic fields on both the sensor sensitivity and bead fringe fields is taken into account. Experiment results ahow that GMR sensors can detect the ferrofluid flow, and the sensor signals are proportional to the bead concentration of the ferrofluid in the microfludic channel.%研究一种集成微流道的巨磁电阻(GMR)传感器对铁磁流体的动态检测.利用SU-8胶和PDMS键合在巨磁电阻传感器上集成微流道.铁磁流体为直径10 nm的Fe304悬浮溶液.巨磁电阻传感器通过直接测量铁磁流体流过有效检测区域时磁珠的感应场,实现对铁磁流体的动态检测.为使检测的灵敏度最大,综合考虑了外加磁场对传感器灵敏度和磁珠感应场的影响.实验结果表明巨磁电阻传感器能够检测到铁磁流体的流动,且传感器信号与微流道中铁磁流体的磁珠浓度成正比.

  4. Evolution and sign control of square-wave-like anisotropic magneto-resistance in spatially confined La0.3Pr0.4Ca0.3MnO3/LaAlO3(001) manganite thin films

    Science.gov (United States)

    Alagoz, H. S.; Jeon, J.; Keating, S.; Chow, K. H.; Jung, J.

    2016-04-01

    We investigated magneto-transport properties of a compressively strained spatially confined La0.3Pr0.4Ca0.3MnO3 (LPCMO) thin film micro-bridge deposited on LaAlO3. Angular dependence of the magneto-resistance R(θ) of this bridge, where θ is the angle between the magnetic field and the current directions in the film plane, exhibits sharp positive and negative percolation jumps near TMIT. The sign and the magnitude of these jumps can be tuned using the magnetic field. Such behavior has not been observed in LPCMO micro-bridges subjected to tensile strain, indicating a correlation between the type of the lattice strain, the distribution of electronic domains, and the anisotropic magneto-resistance in spatially confined manganite systems.

  5. Magnetoresistance of quasi-Bloch-wall induced in NiFe/CoSm exchange-spring bilayers

    International Nuclear Information System (INIS)

    The magnetoresistance (MR) originating from a magnetic structure with continuous rotation of magnetic moments was studied using soft-magnetic/hard-magnetic bilayers. The feature of the MR curves was explained with anisotropic magnetoresistance (AMR) applying to twisted magnetic structures. The giant magnetoresistance (GMR)-type effect was found to be very small compared with the AMR effect. (orig.)

  6. Simulation of eddy current inspection including magnetic field sensor such as a giant magneto-resistance over planar stratified media components with embedded flaws

    International Nuclear Information System (INIS)

    The ECT inspection of a conductive component consists in detecting the perturbation of the induced currents due to a flaw. Among new detectors, Giant Magneto-Resistance (GMR) or Giant Magnetic Impedance sensors, which are sensitive to the magnetic field above the surface of the component, have shown growing interest due to their high performances with respect to classical bobbin coils. In this communication, we present a numerical model based on the volume integral approach which allows computing the components of the perturbed magnetic field due to a given notch embedded in a planar stratified media. Though the inducer may be chosen arbitrary in a list of potential exciting coils, rectangular coils or current foils are very useful for generating a uniform current flow orientated perpendicularly to the length of the flaw. This paper presents firstly some numerical results considering two kinds of distinct numerical models, and then some experimental results will be presented for different kinds of practical applications. This numerical model results in new computation facilities which have been translated into new functionalities in the last version of the CIVA software. (authors)

  7. Titanic Magnetoresistance in WTe2

    OpenAIRE

    Ali, Mazhar N.; Xiong, Jun; Flynn, Steven; Gibson, Quinn; Schoop, Leslie; Haldolaarachchige, Neel; Ong, N. P.; Tao, Jing; Cava, R. J.

    2014-01-01

    Magnetoresistance is the change of a material's electrical resistance in response to an applied magnetic field. In addition to its intrinsic scientific interest, it is a technologically important property, placing it in "Pasteur's quadrant" of research value: materials with large magnetorsistance have found use as magnetic sensors 1, in magnetic memory 2, hard drives 3, transistors 4, and are the subject of frequent study in the field of spintronics 5, 6. Here we report the observation of an ...

  8. Colossal magnetoresistive La0.7(Pb1-xSrx)0.3MnO3 films for bolometer and magnetic sensor applications

    International Nuclear Information System (INIS)

    We report on electrical and magnetic properties of a continuous series of solid solutions La0.7(Pb1-xSrx)0.3MnO3 prepared by the pulsed laser deposition technique on LaAlO3 and SrTiO3 single crystals. Strict compositional control enables us to tailor the metal-to-semiconductor phase transition from 266 to 327 K, the maximum of temperature coefficient of resistance from 10.2%K-1 to 3.2%K-1, and maximum of magnetoresistance ratio at 7 kOe from 41% to 17% for x=0 and x=1 correspondingly. The ferromagnetic resonance linewidth ranges from 124 to 300 Oe, indicating low microwave loss and the films uniformity. Noise spectroscopy performed in the 2 Hz - 20 kHz range reveals two components: Johnson noise (independent of frequency and bias current) and excess 1/f noise proportional to the square of the bias current. Very low excess noise (normalized value γ/n varying in the range from 10-20 to 10-22cm3) has been achieved due to the epitaxial quality of the fabricated films. Using these films, an infrared radiation bolometer and weak magnetic field sensor have been built and tested. The bolometer resolves the noise equivalent temperature difference as low as 120 nK/√Hz at 30 Hz frame frequency, while the magnetic field sensor shows the noise equivalent magnetic field difference of 50 μOe/√Hz at 1 kHz and optimum bias magnetic field applied. [copyright] 2001 American Institute of Physics

  9. Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi{sub 2}Te{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Dey, Rik, E-mail: rikdey@utexas.edu; Pramanik, Tanmoy; Roy, Anupam; Rai, Amritesh; Guchhait, Samaresh; Sonde, Sushant; Movva, Hema C. P.; Register, Leonard F.; Banerjee, Sanjay K. [Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758 (United States); Colombo, Luigi [Texas Instruments, Dallas, Texas 75243 (United States)

    2014-06-02

    We have studied angle dependent magnetoresistance of Bi{sub 2}Te{sub 3} thin film with field up to 9 T over 2–20 K temperatures. The perpendicular field magnetoresistance has been explained by the Hikami-Larkin-Nagaoka theory alone in a system with strong spin-orbit coupling, from which we have estimated the mean free path, the phase coherence length, and the spin-orbit relaxation time. We have obtained the out-of-plane spin-orbit relaxation time to be small and the in-plane spin-orbit relaxation time to be comparable to the momentum relaxation time. The estimation of these charge and spin transport parameters are useful for spintronics applications. For parallel field magnetoresistance, we have confirmed the presence of Zeeman effect which is otherwise suppressed in perpendicular field magnetoresistance due to strong spin-orbit coupling. The parallel field data have been explained using both the contributions from the Maekawa-Fukuyama localization theory for non-interacting electrons and Lee-Ramakrishnan theory of electron-electron interactions. The estimated Zeeman g-factor and the strength of Coulomb screening parameter agree well with the theory. Finally, the anisotropy in magnetoresistance with respect to angle has been described by the Hikami-Larkin-Nagaoka theory. This anisotropy can be used in anisotropic magnetic sensor applications.

  10. Colossal Magnetoresistive Manganite Based Fast Bolometric X-ray Sensors for Total Energy Measurements of Free Electron Lasers

    International Nuclear Information System (INIS)

    Bolometric detectors based on epitaxial thin films of rare earth perovskite manganites have been proposed as total energy monitors for X-ray pulses at the Linac Coherent Light Source free electron laser. We demonstrate such a detector scheme based on epitaxial thin films of the perovskite manganese oxide material Nd0.67Srx0.33MnO3, grown by pulsed laser deposition on buffered silicon substrates. The substrate and sensor materials are chosen to meet the conflicting requirements of radiation hardness, sensitivity, speed and linearity over a dynamic range of three orders of magnitude. The key challenge in the material development is the integration of the sensor material with Si. Si is required to withstand the free electron laser pulse impact and to achieve a readout speed three orders of magnitude faster than conventional cryoradiometers for compatibility with the Linac Coherent Light Source pulse rate. We discuss sensor material development and the photoresponse of prototype devices. This Linac Coherent Light Source total energy monitor represents the first practical application of manganite materials as bolometric sensors

  11. Electronic Structure Basis for the Extraordinary Magnetoresistance in WTe2

    Science.gov (United States)

    Pletikosić, I.; Ali, Mazhar N.; Fedorov, A. V.; Cava, R. J.; Valla, T.

    2014-11-01

    The electronic structure basis of the extremely large magnetoresistance in layered nonmagnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at low temperatures, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. A change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior of the magnetoresistance in WTe2 was identified.

  12. Anisotropic magnetoresistance in an antiferromagnetic semiconductor

    Czech Academy of Sciences Publication Activity Database

    Fina, I.; Martí, Xavier; Yi, D.; Liu, J.; Chu, J.-H.; Rayan-Serrao, C.; Suresha, S.; Shick, Alexander; Železný, Jakub; Jungwirth, Tomáš; Fontcuberta, J.; Ramesh, R.

    2014-01-01

    Roč. 5, SEP (2014), "4671-1"-"4671-7". ISSN 2041-1723 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G; GA ČR(CZ) GAP204/10/0330 Grant ostatní: ERC Advanced Grant 0MSPIN(XE) 268066; AV ČR(CZ) Premium Academiae Institutional support: RVO:68378271 Keywords : antiferromagnets * semiconductors * spintronic s Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 11.470, year: 2014

  13. OPTICAL FIBRES AND FIBREOPTIC SENSORS: Polarisation reflectometry of anisotropic optical fibres

    Science.gov (United States)

    Konstantinov, Yurii A.; Kryukov, Igor'I.; Pervadchuk, Vladimir P.; Toroshin, Andrei Yu

    2009-11-01

    Anisotropic, polarisation-maintaining fibres have been studied using a reflectometer and integrated optic polariser. Linearly polarised pulses were launched into the fibre under test at different angles between their plane of polarisation and the main optical axis of the fibre. A special procedure for the correlation analysis of these reflectograms is developed to enhance the reliability of the information about the longitudinal optical uniformity ofanisotropic fibres.

  14. Anomalous magnetisation process in UFe4Al8 probed by magnetisation and magnetoresistance

    International Nuclear Information System (INIS)

    A strong anisotropic magnetoresistance has been measured in a single crystal of UFe4Al8 and has been used to prove the ferromagnetic order of the U lattice. The giant anomaly detected in the magnetoresistance curves is interpreted as two 90 rotations of the magnetisation. This interpretation has been confirmed by magnetisation measurements. (orig.)

  15. An in-depth noise model for giant magnetoresistance current sensors for circuit design and complementary metal–oxide–semiconductor integration

    Energy Technology Data Exchange (ETDEWEB)

    Roldán, A., E-mail: amroldan@ugr.es; Roldán, J. B. [Department of Electronics and Computer Technology, University of Granada (Spain); Reig, C. [Department of Electronic Engineering, University of Valencia (Spain); Cardoso, S. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisbon (Portugal); Instituto Superior Técnico (IST), Av. Rovisco Pais, 1000-029 Lisbon (Portugal); Cardoso, F. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisbon (Portugal); Ferreira, R. [International Iberian Nanotechnology Laboratory, Braga (Portugal); Freitas, P. P. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisbon (Portugal); International Iberian Nanotechnology Laboratory, Braga (Portugal)

    2014-05-07

    Full instrumentation bridges based on spin valve of giant magnetoresistance and magnetic tunnel junction devices have been microfabricated and experimentally characterized from the DC and noise viewpoint. A more realistic model of these devices was obtained in this work, an electrical and thermal model previously developed have been improved in such a way that noise effects are also included. We have implemented the model in a circuit simulator and reproduced the experimental measurements accurately. This provides a more realistic and complete tool for circuit design where magnetoresistive elements are combined with well-known complementary metal–oxide–semiconductor modules.

  16. An in-depth noise model for giant magnetoresistance current sensors for circuit design and complementary metal–oxide–semiconductor integration

    International Nuclear Information System (INIS)

    Full instrumentation bridges based on spin valve of giant magnetoresistance and magnetic tunnel junction devices have been microfabricated and experimentally characterized from the DC and noise viewpoint. A more realistic model of these devices was obtained in this work, an electrical and thermal model previously developed have been improved in such a way that noise effects are also included. We have implemented the model in a circuit simulator and reproduced the experimental measurements accurately. This provides a more realistic and complete tool for circuit design where magnetoresistive elements are combined with well-known complementary metal–oxide–semiconductor modules

  17. An in-depth noise model for giant magnetoresistance current sensors for circuit design and complementary metal-oxide-semiconductor integration

    Science.gov (United States)

    Roldán, A.; Roldán, J. B.; Reig, C.; Cardoso, S.; Cardoso, F.; Ferreira, R.; Freitas, P. P.

    2014-05-01

    Full instrumentation bridges based on spin valve of giant magnetoresistance and magnetic tunnel junction devices have been microfabricated and experimentally characterized from the DC and noise viewpoint. A more realistic model of these devices was obtained in this work, an electrical and thermal model previously developed have been improved in such a way that noise effects are also included. We have implemented the model in a circuit simulator and reproduced the experimental measurements accurately. This provides a more realistic and complete tool for circuit design where magnetoresistive elements are combined with well-known complementary metal-oxide-semiconductor modules.

  18. Thin-film magnetoresistive absolute position detector

    NARCIS (Netherlands)

    Groenland, Johannes Petrus Jacobus

    1990-01-01

    The subject of this thesis is the investigation of a digital absolute posi- tion-detection system, which is based on a position-information carrier (i.e. a magnetic tape) with one single code track on the one hand, and an array of magnetoresistive sensors for the detection of the informatio

  19. Magnetoresistance of single Permalloy circular rings

    International Nuclear Information System (INIS)

    We have measured magnetoresistance in single, 1 μm external diameter, Permalloy (Ni80Fe20) circular rings with varied inner hole diameter of 150, 300, and 600 nm and film thickness of 25 nm. The Permalloy ring structures and the 10-nm-thick, 250-nm-wide Au nanocontacts were fabricated on a SiO2/Si substrate using e-beam lithography. Using a four contact geometry we studied the dependence of the magnetoresistance on the direction of the applied field. The experimental data are explained by considering only the conventional anisotropic magnetoresistance effect. Numerical simulations of the current distribution within the samples combined with micromagnetic simulations of the field dependent magnetization profile, yield good agreement with the experimental data. Upon increasing the inner hole diameter (viz. decreasing the ring width) the magnetoresistance measurements show a transition of the reversal process from the 'vortex nucleation-displacement-annihilation' sequence to the 'onion state-reversed onion state' sequence, typical of narrow nanorings

  20. Low frequency noise of anisotropic magnetoresistors in DC and AC-excited metal detectors

    International Nuclear Information System (INIS)

    Magnetoresistors can replace induction sensors in applications like non-destructive testing and metal detection, where high spatial resolution or low frequency response is required. Using an AC excitation field the magnetic response of eddy currents is detected. Although giant magnetoresistive (GMR) sensors have higher measuring range and sensitivity compared to anisotropic magnetoresistors (AMR), they show also higher hysteresis and noise especially at low frequencies. Therefore AMR sensors are chosen to be evaluated in low noise measurements with combined processing of DC and AC excitation field with respect to the arrangement of processing electronics. Circuit with a commercial AMR sensor HMC1001 and AD8429 preamplifier using flipping technique exhibited 1-Hz noise as low as 125 pT/√Hz. Without flipping, the 1-Hz noise increased to 246 pT/√Hz.

  1. Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

    DEFF Research Database (Denmark)

    Bolotin, Kirill; Kuemmeth, Ferdinand; Ralph, D

    2006-01-01

    We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance...

  2. Magnetoresistive waves in plasmas

    International Nuclear Information System (INIS)

    The self-generated magnetic field of a current diffusing into a plasma between conductors can magnetically insulate the plasma. Propagation of magnetoresistive waves in plasmas is analyzed. Applications to plasma opening switches are discussed

  3. Magnetoresistance of nanosized magnetic configurations in single nanowires

    Science.gov (United States)

    Wegrowe, J.-E.; Gilbert, S.; Doudin, B.; Ansermet, J.-Ph.

    1998-03-01

    The problem of studying spin configurations at nanoscopic level is that magnetic measurements at this scale cannot be performed using usual magnetometers. We have shown that anisotropic magnetoresistance (AMR) measured with micro-contacts allows spin configurations of a single nanowire to be studied in details. The nanowires are diameter 50 nm and length 6000 nm and are produced by a combination of electrodeposition in track-etched membrane templates and sputtering technics. Magnetoresistance of well-defined spin configurations in single nanowires, like Curling magnetization reversal modes or domain wall, are measured.

  4. Spin Hall magnetoresistance induced by a nonequilibrium proximity effect.

    Science.gov (United States)

    Nakayama, H; Althammer, M; Chen, Y-T; Uchida, K; Kajiwara, Y; Kikuchi, D; Ohtani, T; Geprägs, S; Opel, M; Takahashi, S; Gross, R; Bauer, G E W; Goennenwein, S T B; Saitoh, E

    2013-05-17

    We report anisotropic magnetoresistance in Pt|Y(3)Fe(5)O(12) bilayers. In spite of Y(3)Fe(5)O(12) being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y(3)Fe(5)O(12), excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it "spin Hall magnetoresistance." PMID:25167435

  5. Magnetoresistive nanosensors: controlling magnetism at the nanoscale

    Science.gov (United States)

    Leitao, Diana C.; Silva, Ana V.; Paz, Elvira; Ferreira, Ricardo; Cardoso, Susana; Freitas, Paulo P.

    2016-01-01

    The ability to detect the magnetic fields that surround us has promoted vast technological advances in sensing techniques. Among those, magnetoresistive sensors display an unpaired spatial resolution. Here, we successfully control the linear range of nanometric sensors using an interfacial exchange bias sensing layer coupling. An effective matching of material properties and sensor geometry improves the nanosensor performance, with top sensitivities of 3.7% mT-1. The experimental results are well supported by 3D micromagnetic and magneto-transport simulations.

  6. Comment on “Planar Hall resistance ring sensor based on NiFe/Cu/IrMn trilayer structure” [J. Appl. Phys. 113, 063903 (2013)

    DEFF Research Database (Denmark)

    Østerberg, Frederik Westergaard; Henriksen, Anders Dahl; Rizzi, Giovanni;

    2013-01-01

    In a recent paper, Sinha et al. compared sensitivities of planar Hall effect sensors with different geometries that are all based on the anisotropic magnetoresistance of permalloy. They write that the sensitivity of a planar Hall effect sensor with a ring geometry is a factor of √2 larger than the...... sensitivity of the so-called planar Hall effect bridge (PHEB) sensor of equal size. Osterberg et al do not agree on the signal calculation for a ring sensor derived by Sinha et al. and claim that this adversely affects the results....

  7. Reversible and irreversible temperature-induced changes in exchange-biased planar Hall effect bridge (PHEB) magnetic field sensors

    DEFF Research Database (Denmark)

    Rizzi, G.; Lundtoft, N.C.; Østerberg, F.W.;

    2012-01-01

    We investigate the changes of planar Hall effect bridge magnetic field sensors upon exposure to temperatures between 25° C and 90°C. From analyses of the sensor response vs. magnetic fields we extract the exchange bias field Hex, the uniaxial anisotropy field HK and the anisotropic...... magnetoresistance (AMR) of the exchange biased thin film at a given temperature and by comparing measurements carried out at elevated temperatures T with measurements carried out at 25° C after exposure to T, we can separate the reversible from the irreversible changes of the sensor. The results are not only...

  8. Magnetization reversal in permalloy ferromagnetic nanowires investigated with magnetoresistance measurements

    Science.gov (United States)

    Oliveira, A. B.; Rezende, S. M.; Azevedo, A.

    2008-07-01

    The magnetization reversal process in single Permalloy (Ni81Fe19) nanowires has been investigated by magnetoresistance measurements as a function of the angle between the applied field and the wire direction. The Permalloy nanostructures fabricated on an ultrathin film by atomic force microscopy consist of two large rectangular pads connected by a nanowire with the shape of a long thin narrow tape. For each field direction in the plane of the film the dependence of the magnetoresistance on the field value exhibits two main contributions: one from the pads and one from the nanowire. The contribution from the pads is due to a usual anisotropic magnetoresistance characteristic of coherent magnetization rotation, whereas the contribution from the nanowire is an abrupt transition at the switching field. The dependence of the switching field on the in-plane field angle is quantitatively described by a model of nucleation field with the buckling magnetization rotation mode.

  9. Anomalous electronic structure and magnetoresistance in TaAs2.

    Science.gov (United States)

    Luo, Yongkang; McDonald, R D; Rosa, P F S; Scott, B; Wakeham, N; Ghimire, N J; Bauer, E D; Thompson, J D; Ronning, F

    2016-01-01

    The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions. PMID:27271852

  10. Negative magnetoresistivity in holography

    CERN Document Server

    Sun, Ya-Wen

    2016-01-01

    Negative magnetoresistivity is a special magnetotransport property associated with chiral anomaly in four dimensional chiral anomalous systems, which refers to the transport behavior that the DC longitudinal magnetoresistivity decreases with increasing magnetic field. We calculate the longitudinal magnetoconductivity in the presence of backreactions of the magnetic field to gravity in holographic zero charge and axial charge density systems with and without axial charge dissipation. In the absence of axial charge dissipation, we find that the quantum critical conductivity grows with increasing magnetic field when the backreaction strength is larger than a critical value, in contrast to the monotonically decreasing behavior of quantum critical conductivity in the probe limit. With axial charge dissipation, we find the negative magnetoresistivity behavior. The DC longitudinal magnetoconductivity scales as $B$ in the large magnetic field limit, which deviates from the exact $B^2$ scaling of the probe limit resul...

  11. Systematic Angular Study of Magnetoresistance in Permalloy Connected Kagome Artificial Spin Ice

    Science.gov (United States)

    Park, Jungsik; Le, Brian; Watts, Justin; Leighton, Chris; Samarth, Nitin; Schiffer, Peter

    Artificial spin ices are nanostructured two-dimensional arrays of ferromagnetic elements, where frustrated interactions lead to unusual collective magnetic behavior. Here we report a room-temperature magnetoresistance study of connected permalloy (Ni81Fe19) kagome artificial spin ice networks, wherein the direction of the applied in-plane magnetic field is systematically varied. We measure both the longitudinal and transverse magnetoresistance in these structures, and we find certain transport geometries of the network show strong angular sensitivity - even small variations in the applied field angle lead to dramatic changes of the magnetoresistance response. We also investigate the magnetization reversal of the networks using magnetic force microscopy (MFM), demonstrating avalanche behavior in the magnetization reversal. The magnetoresistance features are analyzed using an anisotropic magnetoresistance (AMR) model. Supported by the US Department of Energy. Work at the University of Minnesota was supported by Seagate Technology, NSF MRSEC, and a Marie Curie International Outgoing Fellowship within the 7th European Community Framework Programme.

  12. Electronic structure basis for the titanic magnetoresistance in WTe$_2$

    OpenAIRE

    Pletikosić, I.; Ali, Mazhar N.; Fedorov, A; Cava, R. J.; Valla, T.

    2014-01-01

    The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetor...

  13. Giant positive magnetoresistance in metallic VOx thin films

    OpenAIRE

    Rata, A. D.; Kataev, V.; Khomskii, D.; Hibma, T.

    2003-01-01

    We report on giant positive magnetoresistance effect observed in VOx thin films, epitaxially grown on SrTiO3 substrate. The MR effect depends strongly on temperature and oxygen content and is anisotropic. At low temperatures its magnitude reaches 70% in a magnetic field of 5 T. Strong electron-electron interactions in the presence of strong disorder may qualitatively explain the results. An alternative explanation, related to a possible magnetic instability, is also discussed.

  14. Giant positive magnetoresistance in metallic VOx thin films

    Science.gov (United States)

    Rata, A. D.; Kataev, V.; Khomskii, D.; Hibma, T.

    2003-12-01

    We report on giant positive magnetoresistance (MR) effect observed in VOx thin films, epitaxially grown on SrTiO3 substrate. The MR effect depends strongly on temperature and oxygen content and is anisotropic. At low temperatures its magnitude reaches 70% in a magnetic field of 5 T. Strong electron-electron interactions in the presence of strong disorder may qualitatively explain the results. An alternative explanation, related to a possible magnetic instability, is also discussed.

  15. Anisotropy of magnetoresistance on trapping magnetic fields in granular HTSC

    CERN Document Server

    Sukhanov, A A

    2003-01-01

    The features of magnetoresistance in Bi (Pb)-HTSC ceramics with the magnetic fields trapped are investigated. It is found that on trapping magnetic flux the magnetoresistance in granular HTSC becomes anisotropic. Moreover, for magnetic fields H parallel and currents perpendicular to field H sub i which induces the trapping the magnetoresistance field dependence DELTA R(H) is nonmonotonic and the magnetoresistance is negative for small fields H < Hinv. The effect of trapped field and transport current and their orientations on the dependence DELTA R(H) is investigated. In particular, it is found that the field of magnetoresistance sign inversion Hinv almost linearly grows with increase of the effective trapped magnetic fields. Hinv decreases down to zero as the angle between fields H and H sub i increases up to pi/2 and slightly decreases with increasing transport current. The results are treated in terms of the model of magnetic flux trapping in superconducting grains or 'loops' embedded in a matrix of wea...

  16. Large, non-saturating magnetoresistance in WTe2

    Science.gov (United States)

    Ali, Mazhar N.; Xiong, Jun; Flynn, Steven; Tao, Jing; Gibson, Quinn D.; Schoop, Leslie M.; Liang, Tian; Haldolaarachchige, Neel; Hirschberger, Max; Ong, N. P.; Cava, R. J.

    2014-10-01

    Magnetoresistance is the change in a material's electrical resistance in response to an applied magnetic field. Materials with large magnetoresistance have found use as magnetic sensors, in magnetic memory, and in hard drives at room temperature, and their rarity has motivated many fundamental studies in materials physics at low temperatures. Here we report the observation of an extremely large positive magnetoresistance at low temperatures in the non-magnetic layered transition-metal dichalcogenide WTe2: 452,700 per cent at 4.5 kelvins in a magnetic field of 14.7 teslas, and 13 million per cent at 0.53 kelvins in a magnetic field of 60 teslas. In contrast with other materials, there is no saturation of the magnetoresistance value even at very high applied fields. Determination of the origin and consequences of this effect, and the fabrication of thin films, nanostructures and devices based on the extremely large positive magnetoresistance of WTe2, will represent a significant new direction in the study of magnetoresistivity.

  17. Magnetoresistive Emulsion Analyzer

    OpenAIRE

    Lin, Gungun; Baraban, Larysa; Han, Luyang; Karnaushenko, Daniil; Makarov, Denys; Cuniberti, Gianaurelio; Schmidt, Oliver G.

    2013-01-01

    We realize a magnetoresistive emulsion analyzer capable of detection, multiparametric analysis and sorting of ferrofluid-containing nanoliter-droplets. The operation of the device in a cytometric mode provides high throughput and quantitative information about the dimensions and magnetic content of the emulsion. Our method offers important complementarity to conventional optical approaches involving ferrofluids, and paves the way to the development of novel compact tools for diagnostics and n...

  18. Magnetic giant magnetoresistance commercial off the shelf for space applications

    DEFF Research Database (Denmark)

    Michelena, M.D.; Oelschlägel, Wulf; Arruego, I.;

    2008-01-01

    The increase of complexity and miniaturizing level of Aerospace platforms make use of commercial off the shelf (COTS) components constitute a plausible alternative to the use of military or rad-tolerant components. In this work, giant magnetoresistance commercial sensors are studied to be used as...

  19. Electronic structure origins of the extremely large magnetoresistance in tungsten ditelluride

    Science.gov (United States)

    Pletikosic, Ivo; Ali, Mazhar; Cava, Robert; Valla, Tonica

    2015-03-01

    WTe2 is a layered transition metal dichalcogenide showing a structural reduction to one-dimensional tellurium-surrounded tungsten chains. The material exhibits an extremely large positive anisotropic magnetoresistance of a few million percent that increases as the square of the field and shows no saturation up to 60 T. We explored the possible electronic structure origins of the magnetoresistance by means of angle-resolved photoelectron spectroscopy (ARPES) and found electron and hole pockets of equal size along the direction of tungsten chains, forming a highly anisotropic quasi-twodimensional Fermi surface. The perfect carrier compensation at low temperatures has been identified as the primary source of the magnetoresistive effect, and the change of the Fermi surface shape as well as a high-density-of-states band slightly below the Fermi level recognized as the cause of its diminishing at rising temperatures.

  20. Theory of magnetoresistance due to lattice dislocations in face-centred cubic metals

    Science.gov (United States)

    Bian, Q.; Niewczas, M.

    2016-06-01

    A theoretical model to describe the low temperature magneto-resistivity of high purity copper single and polycrystals containing different density and distribution of dislocations has been developed. In the model, magnetoresistivity tensor is evaluated numerically using the effective medium approximation. The anisotropy of dislocation-induced relaxation time is considered by incorporating two independent energy bands with different relaxation times and the spherical and cylindrical Fermi surfaces representing open, extended and closed electron orbits. The effect of dislocation microstructure is introduced by means of two adjustable parameters corresponding to the length and direction of electron orbits in the momentum space, which permits prediction of magnetoresistance of FCC metals containing different density and distribution of dislocations. The results reveal that dislocation microstructure influences the character of the field-dependent magnetoresistivity. In the orientation of the open orbits, the quadratic variation in magnetoresistivity changes to quasi-linear as the density of dislocations increases. In the closed orbit orientation, dislocations delay the onset of magnetoresistivity saturation. The results indicate that in the open orbit orientations of the crystals, the anisotropic relaxation time due to small-angle dislocation scattering induces the upward deviation from Kohler's rule. In the closed orbit orientations Kohler's rule holds, independent of the density of dislocations. The results obtained with the model show good agreement with the experimental measurements of transverse magnetoresistivity in deformed single and polycrystal samples of copper at 2 K.

  1. Transverse thermal magnetoresistance of potassium

    International Nuclear Information System (INIS)

    Results are presented of extensive thermal magnetoresistance measurements on single-crystal and polycrystalline specimens of potassium having residual resistance ratios (RRR) ranging from 1100 to 5300. Measurements were made between 2 and 90K for magnetic fields up to 1.8 T. The observed thermal magnetoresistance cannot be understood on the basis of either semiclassical theories or from the electrical magnetoresistance and the Wiedemann-Franz law. A number of relationships are observed between the thermal and electrical magnetoresistances, many of which are not immediately obvious when comparing direct experimental observations. The thermal magnetoresistance W(T,H) is given reasonably well by W(T,H)T = W(T,0)T + AH + BH2, where both A and B are temperature-dependent coefficients. Results show that A = A0 + A1T3, while B(T) cannot be expressed as any simple power law. A0 is dependent on the RRR, while A1 is independent of the RRR. Two relationships are found between corresponding coefficients in the electrical and thermal magnetoresistance: (i) the Wiedmann--Franz law relates A0 to the Kohler slope of the electrical magnetoresistance and (ii) the temperature-dependent portions of the electrical and thermal Kohler slopes are both proportional to the electron--phonon scattering contribution to the corresponding zero-field resistance. The latter provides evidence that inelastic scattering is very important in determining the temperature-dependent linear magnetoresistances. Part, but by no means all, of the quadratic thermal resistance is accounted for by lattice thermal conduction. It is concluded that at least a portion of the anomalous electrical and thermal magnetoresistances is due to intrinsic causes and not inhomogeneities or other macroscopic defects

  2. Noncontact vibration measurements using magnetoresistive sensing elements

    Science.gov (United States)

    Tomassini, R.; Rossi, G.

    2016-06-01

    Contactless instrumentations is more and more used in turbomachinery testing thanks to the non-intrusive character and the possibility to monitor all the components of the machine at the same time. Performances of blade tip timing (BTT) measurement systems, used for noncontact turbine blade vibration measurements, in terms of uncertainty and resolution are strongly affected by sensor characteristics and processing methods. The sensors used for BTT generate pulses, used for precise measurements of turbine blades time of arrival. Nowadays proximity sensors used in this application are based on optical, capacitive, eddy current and microwave measuring principle. Pressure sensors has been also tried. This paper summarizes the results achieved using a novel instrumentation based on the magnetoresistive sensing elements. The characterization of the novel probe has been already published. The measurement system was validated in test benches and in a real jet-engine comparing different sensor technologies. The whole instrumentation was improved. The work presented in this paper focuses on the current developments. In particular, attention is given to the data processing software and new sensor configurations.

  3. Anomalous magnetoresistance in Fibonacci multilayers.

    Energy Technology Data Exchange (ETDEWEB)

    Machado, L. D.; Bezerra, C. G.; Correa, M. A.; Chesman, C.; Pearson, J. E.; Hoffmann, A. (Materials Science Division); (Universidade Federal do Rio Grande do Norte)

    2012-01-01

    We theoretically investigated magnetoresistance curves in quasiperiodic magnetic multilayers for two different growth directions, namely, [110] and [100]. We considered identical ferromagnetic layers separated by nonmagnetic layers with two different thicknesses chosen based on the Fibonacci sequence. Using parameters for Fe/Cr multilayers, four terms were included in our description of the magnetic energy: Zeeman, cubic anisotropy, bilinear coupling, and biquadratic coupling. The minimum energy was determined by the gradient method and the equilibrium magnetization directions found were used to calculate magnetoresistance curves. By choosing spacers with a thickness such that biquadratic coupling is stronger than bilinear coupling, unusual behaviors for the magnetoresistance were observed: (i) for the [110] case, there is a different behavior for structures based on even and odd Fibonacci generations, and, more interesting, (ii) for the [100] case, we found magnetic field ranges for which the magnetoresistance increases with magnetic field.

  4. Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect

    OpenAIRE

    Nakayama, H.; Althammer, M.; Chen, Y. T.; Uchida, K.; Kajiwara, Y.; Kikuchi, D.; Ohtani, T.; Geprägs, S.; Opel, M.; Takahashi, S.; Gross, R.; Bauer, G. E. W.; Goennenwein, S. T. B.; Saitoh, E.

    2013-01-01

    We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y3Fe5O12, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it “spin Hal...

  5. A flexible strain gauge exhibiting reversible piezoresistivity based on an anisotropic magnetorheological polymer

    International Nuclear Information System (INIS)

    A flexible, anisotropic and portable stress sensor (logarithmic reversible response between 40–350 kPa) was fabricated, in which i) the sensing material, ii) the electrical contacts and iii) the encapsulating material, were based on polydimethylsiloxane (PDMS) composites. The sensing material is a slide of an anisotropic magnetorheological elastomer (MRE), formed by dispersing silver-covered magnetite particles (Fe3O4@Ag) in PDMS and by curing in the presence of a uniform magnetic field. Thus, the MRE is a structure of electrically conducting pseudo-chains (needles) aligned in a specific direction, in which electrical conductivity increases when stress is exclusively applied in the direction of the needles. Electrical conductivity appears only between contact points that face each other at both sides of the MRE slide. An array of electrical contacts was implemented based on PDMS-silver paint metallic composites. The array was encapsulated with PDMS. Using Fe3O4 superparamagnetic nanoparticles also opens up possibilities for a magnetic field sensor, due to the magnetoresistance effects. (paper)

  6. Nonlocal ordinary magnetoresistance in indium arsenide

    International Nuclear Information System (INIS)

    Deflection of carriers by Lorentz force results in an ordinary magnetoresistance (OMR) of (μB)2 at low field. Here we demonstrate that the OMR in high mobility semiconductor InAs could be enhanced by measurement geometry where two probes of voltmeter were both placed on one outer side of two probes of current source. The nonlocal OMR was 3.6 times as large as the local one, reaching 1.8×104% at 5 T. The slope of the linear field dependence of the nonlocal OMR was improved from 12.6 T−1 to 45.3 T−1. The improvement was ascribed to polarity-conserved charges accumulating on boundaries in nonlocal region due to Hall effect. This InAs device with nonlocal geometry could be competitive in B-sensors due to its high OMR ratio, linear field dependence and simple structure. - Highlights: • Ordinary magnetoresistance could be enhanced by nonlocal geometry by 3.6 times. • Linear field dependence at high field could be realized in nonlocal geometry. • Nonlocal MR was realized by polarity-conserved accumulating charges on boundaries • Nonlocal MR in InAs reached 1.8×104% at 5 T. • Nonlocal MR devices could be used in high-field sensing applications

  7. Nonlocal ordinary magnetoresistance in indium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Pan [School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021 (China); Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yuan, Zhonghui; Wu, Hao; Ali, S.S. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wan, Caihua, E-mail: wancaihua@iphy.ac.cn [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Ban, Shiliang, E-mail: slban@imu.edu.cn [School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021 (China)

    2015-07-01

    Deflection of carriers by Lorentz force results in an ordinary magnetoresistance (OMR) of (μB){sup 2} at low field. Here we demonstrate that the OMR in high mobility semiconductor InAs could be enhanced by measurement geometry where two probes of voltmeter were both placed on one outer side of two probes of current source. The nonlocal OMR was 3.6 times as large as the local one, reaching 1.8×10{sup 4}% at 5 T. The slope of the linear field dependence of the nonlocal OMR was improved from 12.6 T{sup −1} to 45.3 T{sup −1}. The improvement was ascribed to polarity-conserved charges accumulating on boundaries in nonlocal region due to Hall effect. This InAs device with nonlocal geometry could be competitive in B-sensors due to its high OMR ratio, linear field dependence and simple structure. - Highlights: • Ordinary magnetoresistance could be enhanced by nonlocal geometry by 3.6 times. • Linear field dependence at high field could be realized in nonlocal geometry. • Nonlocal MR was realized by polarity-conserved accumulating charges on boundaries • Nonlocal MR in InAs reached 1.8×10{sup 4}% at 5 T. • Nonlocal MR devices could be used in high-field sensing applications.

  8. Study of magnetic anisotropy and magnetoresistance effects in ferromagnetic Co/Au multilayer films prepared by oblique incidence evaporation method

    International Nuclear Information System (INIS)

    A series of e-beam evaporated [Co10 A/Aut A]20 multilayers has been deposited on 1.69 mm2 glass substrates. The samples were examined with vibrating sample magnetometer, low angle X-ray diffraction, and magnetoresistance (MR) measurements. The effects of oblique incidence evaporation and magnetic annealing on the anisotropy, microstructure, and different components of MR are examined. After magnetic annealing, the multilayer [Co10 A/Au20 A]20 produced at the incidence angle of 45o showed a strong anisotropy and the easy axis of the anisotropy is along the perpendicular (x-axis; along the film plane) to the incidence of evaporation. MR at room temperature has two components: isotropic and anisotropic. The magnetoresistance effects are found to be larger in the uniaxial films, with both anisotropic and giant magnetoresistance peaking at around 20 A Au layer thickness

  9. Deposition temperature influence on sputtered nanogranular magnetoresistive composites

    International Nuclear Information System (INIS)

    Among different physical principles magnetic sensors for low magnetic field detection can be based on, granular giant magnetoresistances have been studied due to their high sensitivity to small field changes and gradual magnetoresistance change at low fields. Following this aim, nanogranular Ag-Co thin films, deposited by DC co-sputtering from Ag and Co targets at different deposition temperatures have been tested. Samples have been grown at room temperature, 100 and 200 deg. C and annealed in a mixture of N2 and H2 at 200 and 300 deg. C for 45 min. The samples that have shown the best performance have been subjected to two sets of measurements where an external field has been applied in-plane and perpendicular to the film plane. The best performance has been shown by the samples deposited at room temperature and annealed at 300 deg. C, reporting a maximum value of magnetoresistance of 16.7% at 1.4 T and a linear sensitivity of 63%/T between 0.04 and 0.07 T within a magnetoresistance range varying from 1.5% to 3% when subjected to an in-plane external field

  10. Experimental study of the anisotropic magneto-Seebeck effect in (Ga,Mn)As thin films

    Energy Technology Data Exchange (ETDEWEB)

    Althammer, Matthias; Krupp, Alexander T.; Brenninger, Thomas; Venkateshvaran, Deepak; Opel, Matthias; Gross, Rudolf; Goennenwein, Sebastian T.B. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Garching (Germany); Dreher, Lukas [Walter Schottky Institut, Technische Universitaet Muenchen, Garching (Germany); Schoch, Wladimir; Limmer, Wolfgang [Abteilung Halbleiterphysik, Universitaet Ulm, Ulm (Germany)

    2011-07-01

    In analogy to anisotropic magnetoresistance (AMR), the thermopower of ferromagnetic materials also characteristically depends on the orientation of the magnetization vector. This anisotropic magneto-thermopower - or anisotropic magneto-Seebeck effect (AMS) - has only scarcely been studied to date. Taking the ferromagnetic semiconductor (Ga,Mn)As with its large magneto-resistive effects as a prototype example, we have measured the evolution of both the AMR and the AMS effects at liquid He temperatures as a function of the orientation of a magnetic field applied in the (Ga,Mn)As film plane, for different, fixed magnetic field magnitudes. Our data show that the AMS effect can be adequately modeled only if the symmetry of the (Ga,Mn)As crystal is explicitly taken into account. We quantitatively compare our AMR and AMS measurements with corresponding model calculations, and address the validity of the Mott relations linking the magneto-resistance and the magneto-Seebeck coefficients.

  11. Experimental study of the anisotropic magneto-Seebeck effect in (Ga,Mn)As thin films

    International Nuclear Information System (INIS)

    In analogy to anisotropic magnetoresistance (AMR), the thermopower of ferromagnetic materials also characteristically depends on the orientation of the magnetization vector. This anisotropic magneto-thermopower - or anisotropic magneto-Seebeck effect (AMS) - has only scarcely been studied to date. Taking the ferromagnetic semiconductor (Ga,Mn)As with its large magneto-resistive effects as a prototype example, we have measured the evolution of both the AMR and the AMS effects at liquid He temperatures as a function of the orientation of a magnetic field applied in the (Ga,Mn)As film plane, for different, fixed magnetic field magnitudes. Our data show that the AMS effect can be adequately modeled only if the symmetry of the (Ga,Mn)As crystal is explicitly taken into account. We quantitatively compare our AMR and AMS measurements with corresponding model calculations, and address the validity of the Mott relations linking the magneto-resistance and the magneto-Seebeck coefficients.

  12. Study of the different magnetoresistance sources in Ag/Co multilayers

    International Nuclear Information System (INIS)

    We report results on magnetoresistance and magnetic properties of sputtered Ag/Co multilayers and their relation to structural properties. We found two components of the magnetoresistance: isotropic and anisotropic. The first one is found to be related to cobalt particles at the interfaces between magnetic and nonmagnetic layers and also to cobalt particles diluted into the silver layers. The other contribution is related to ferromagnetic multidomain Co layers. The results on magnetoresistance and magnetization at low fields, and conductivity measurements, give clear proof of a transition from granular to continuous structure of the magnetic layer. For example, in a Ag/Co multilayer series with silver thickness of 20 A, such a transition occurs for a cobalt thickness around 5 A

  13. Study of the different magnetoresistance sources in Ag/Co multilayers

    CERN Document Server

    Paje, S E; Andres, J P; Riveiro, J M

    2003-01-01

    We report results on magnetoresistance and magnetic properties of sputtered Ag/Co multilayers and their relation to structural properties. We found two components of the magnetoresistance: isotropic and anisotropic. The first one is found to be related to cobalt particles at the interfaces between magnetic and nonmagnetic layers and also to cobalt particles diluted into the silver layers. The other contribution is related to ferromagnetic multidomain Co layers. The results on magnetoresistance and magnetization at low fields, and conductivity measurements, give clear proof of a transition from granular to continuous structure of the magnetic layer. For example, in a Ag/Co multilayer series with silver thickness of 20 A, such a transition occurs for a cobalt thickness around 5 A.

  14. Anomalous magnetoresistance in the spinel superconductor LiTi2O4.

    Science.gov (United States)

    Jin, K; He, G; Zhang, X; Maruyama, S; Yasui, S; Suchoski, R; Shin, J; Jiang, Y; Yu, H S; Yuan, J; Shan, L; Kusmartsev, F V; Greene, R L; Takeuchi, I

    2015-01-01

    LiTi2O4 is a unique compound in that it is the only known spinel oxide superconductor. The lack of high quality single crystals has thus far prevented systematic investigations of its transport properties. Here we report a careful study of transport and tunnelling spectroscopy in epitaxial LiTi2O4 thin films. An unusual magnetoresistance is observed which changes from nearly isotropic negative to prominently anisotropic positive as the temperature is decreased. We present evidence that shows that the negative magnetoresistance likely stems from the suppression of local spin fluctuations or spin-orbit scattering centres. The positive magnetoresistance suggests the presence of an orbital-related state, also supported by the fact that the superconducting energy gap decreases as a quadratic function of magnetic field. These observations indicate that the spin-orbital fluctuations play an important role in LiTi2O4 in a manner similar to high-temperature superconductors. PMID:25990638

  15. Magnetoresistance stories of double perovskites

    Indian Academy of Sciences (India)

    Abhishek Nag; Sugata Ray

    2015-06-01

    Tunnelling magnetoresistance (TMR) in polycrystalline double perovskites has been an important research topic for more than a decade now, where the nature of the insulating tunnel barrier is the core issue of debate. Other than the nonmagnetic grain boundaries as conventional tunnel barriers, intragrain magnetic antiphase boundaries (APB) as well as magnetically frustrated grain surfaces have also been proposed to act as tunnel barriers in Sr2FeMoO6. In this review, the present state of the debate has been discussed briefly and how the physical state of the material can affect the magnetoresistance signal of double perovskites in many different ways has been pointed out.

  16. Using granular C0-AI2O3 spacer for optimization of functional parameters of the FeMn/Fe20Ni80 magnetoresistive films

    Science.gov (United States)

    Gorkovenko, A. N.; Lepalovskij, V. N.; Adanakova, O. A.; Vas'kovskiy, V. O.

    2016-03-01

    In this paper we studied the possibility of tailoring the functional properties of the multilayer magnetoresistive medium with unidirectional anisotropy and the anisotropic magnetoresistance effect (AMR). Objects of the research were composite Co-Al2O3 films and Ta/Fe20Ni80/Fe50Mn50/Fe20Ni80/Co-Al2O3/Fe20Ni80/Ta multilayers structures obtained by magnetron sputtering and selectively subjected vacuum annealing. Structure, magnetic and magnetoresistive properties of the films in the temperature range 77÷440 K were investigated.

  17. Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystals

    OpenAIRE

    Haifeng Li; Yinguo Xiao; Berthold Schmitz; Jörg Persson; Wolfgang Schmidt; Paul Meuffels; Georg Roth; Thomas Brückel

    2012-01-01

    Magnetoresistance (MR) has attracted tremendous attention for possible technological applications. Understanding the role of magnetism in manipulating MR may in turn steer the searching for new applicable MR materials. Here we show that antiferromagnetic (AFM) GdSi metal displays an anisotropic positive MR value (PMRV), up to $\\sim$ 415%, accompanied by a large negative thermal volume expansion (NTVE). Around $T_\\text{N}$ the PMRV translates to negative, down to $\\sim$ -10.5%. Their theory-br...

  18. CPP magnetoresistance of magnetic multilayers: A critical review

    Science.gov (United States)

    Bass, Jack

    2016-06-01

    review is designed to provide a history of how knowledge of CPP-MR parameters grew, to give credit for discoveries, to explain how combining theory and experiment has enabled extraction of quantitative information about these parameters, but also to make clear that progress was not always direct and to point out where disagreements still exist. To limit its length, the review considers only collinear orientations of the moments of adjacent F-layers. To aid readers looking for specific information, we have provided an extensive table of contents and a detailed summary. Together, these should help locate over 100 figures plus 17 tables that collect values of individual parameters. In 1997, CIP-MR replaced anisotropic MR (AMR) as the sensor in read heads of computer hard drives. In principle, the usually larger CPP-MR was a contender for the next generation read head sensor. But in 2003, CIP-MR was replaced by the even larger Tunneling MR (TMR), which has remained the read-head sensor ever since. However, as memory bits shrink to where the relatively large specific resistance AR of TMR gives too much noise and too large an R to impedance match as a read-head sensor, the door is again opened for CPP-MR. We will review progress in finding techniques and F-alloys and F/N pairs to enhance the CPP-MR, and will describe its present capabilities.

  19. Giant Magnetoresistance-based Biosensor for Detection of Influenza A Virus

    OpenAIRE

    Krishna, Venkatramana D.; Wu, Kai; Perez, Andres M.; WANG, JIAN-PING

    2016-01-01

    We have developed a simple and sensitive method for the detection of influenza A virus based on giant magnetoresistance (GMR) biosensor. This assay employs monoclonal antibodies to viral nucleoprotein (NP) in combination with magnetic nanoparticles (MNPs). Presence of influenza virus allows the binding of MNPs to the GMR sensor and the binding is proportional to the concentration of virus. Binding of MNPs onto the GMR sensor causes change in the resistance of sensor, which is measured in a re...

  20. Experimental and theoretical investigation of the precise transduction mechanism in giant magnetoresistive biosensors

    OpenAIRE

    Jung-Rok Lee; Noriyuki Sato; Bechstein, Daniel J. B.; Osterfeld, Sebastian J.; Junyi Wang; Adi Wijaya Gani; Hall, Drew A; Wang, Shan X.

    2016-01-01

    Giant magnetoresistive (GMR) biosensors consisting of many rectangular stripes are being developed for high sensitivity medical diagnostics of diseases at early stages, but many aspects of the sensing mechanism remain to be clarified. Using e-beam patterned masks on the sensors, we showed that the magnetic nanoparticles with a diameter of 50 nm located between the stripes predominantly determine the sensor signals over those located on the sensor stripes. Based on computational analysis, it w...

  1. Giant tunneling magnetoresistance in silicene

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yu, E-mail: ywang@semi.ac.cn [Department of Physics, Faculty of Science, Kunming University of Science and Technology, Kunming, 650500 Yunnan (China); Lou, Yiyi [Yiyuan Student Community, Center of Student Community Education and Management, Kunming University of Science and Technology, Kunming, 650500 Yunnan (China)

    2013-11-14

    We have theoretically studied ballistic electron transport in silicene under the manipulation of a pair of ferromagnetic gate. Transport properties like transmission and conductance have been calculated by the standard transfer matrix method for parallel and antiparallel magnetization configurations. It is demonstrated here that, due to the stray field-induced wave-vector filtering effect, remarkable difference in configuration-dependent transport gives rise to a giant tunneling magnetoresistance. In combination with the peculiar buckled structure of silicene and its electric tunable energy gap, the receiving magnetoresistance can be efficiently modulated by the externally-tunable stray field, electrostatic potential, and staggered sublattice potential, providing some flexible strategies to construct silicene-based nanoelectronic device.

  2. Tunnel magnetoresistance of polymeric chains

    OpenAIRE

    Walczak, Kamil

    2004-01-01

    Coherent spin-dependent electronic transport is investigated in a molecular junction made of polymeric chain attached to ferromagnetic electrodes (Ni and Co, respectively). Molecular system is described by a simple Huckel model, while the coupling to the electrodes is treated through the use of a broad-band theory. The current flowing through the device is calculated within non-equilibrium Green's function approach. It is shown that tunnel magnetoresistance of molecular junction can be quite ...

  3. Vortex dynamics in supraconductors in the presence of anisotropic pinning

    International Nuclear Information System (INIS)

    Vortex dynamics in two different classes of superconductors with anisotropic unidirected pinning sites was experimentally investigated by magnetoresistivity measurements: YBCO-films with unidirected twins and Nb-films deposited on faceted Al2O3 substrate surfaces. For the interpretation of the experimental results a theoretical model based on the Fokker-Planck equation was used. It was proved by X-ray measurements that YBCO films prepared on (001) NdGaO3 substrates exhibit only one twin orientation in contrast to YBCO films grown on (100) SrTiO3 substrates. The magnetoresistivity measurements of the YBCO films with unidirected twin boundaries revealed the existence of two new magnetoresistivity components, which is a characteristic feature of a guided vortex motion: an odd longitudinal component with respect to the magnetic field sign reversal and an even transversal component. However, due to the small coherence length in YBCO and the higher density of point-like defects comparing to high-quality YBCO single crystals, the strength of the isotropic point pinning was comparable with the strength of the pinning produced by twins. This smeared out all e ects caused by the pinning anisotropy. The behaviour of the odd longitudinal component was found to be independent of the transport current direction with respect to the twin planes. The magnetoresistivity measurements of faceted Nb films demonstrated the appearance of an odd longitudinal and even transversal component of the magnetoresistivity. The temperature and magnetic field dependences of all relevant magnetoresistivity components were measured. The angles between the average vortex velocity vector and the transport current direction calculated from the experimental data for the different transport current orientations with respect to the facet ridges showed that the vortices moved indeed along the facet ridges. An anomalous Hall effect, i.e. a sign change of the odd transversal magnetoresistivity, has been found

  4. Magnetoresistance of galfenol-based magnetic tunnel junction

    Science.gov (United States)

    Gobaut, B.; Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Rafaqat, H.; Roddaro, S.; Rossi, G.; Panaccione, G.; Eddrief, M.; Marangolo, M.; Torelli, P.

    2015-12-01

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  5. Magnetoresistance of galfenol-based magnetic tunnel junction

    International Nuclear Information System (INIS)

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude

  6. Quantum Criticality and DBI Magneto-resistance

    CERN Document Server

    Kiritsis, Elias

    2016-01-01

    We use the DBI action from string theory and holography to study the magneto-resistance at quantum criticality with hyperscaling violation. We find and analyze a rich class of scaling behaviors for the magneto-resistance. A special case describes the scaling results found in pnictides by Hayers et al. in~\\cite{analytis}.

  7. Tunable angular-dependent magnetoresistance correlations in magnetic films and their implications for spin Hall magnetoresistance analysis

    Science.gov (United States)

    Zou, L. K.; Zhang, Y.; Gu, L.; Cai, J. W.; Sun, L.

    2016-02-01

    Angular-dependent magnetoresistance (MR) is considered to be intrinsic to spintronic materials, represented by the classical anisotropic MR (AMR) phenomenon and the recently emerged spin Hall MR (SMR). So far, isotropic AMR, AMR with geometric size effect and interfacial effect, and SMR have been treated separately to explain distinct MR correlations observed in various systems. Current study shows all four types of MR correlations can be reproduced in Fe thin films depending on the film thickness, texture, interface, and morphology. Results suggest previous explanations of the thin-film MR correlations are incomplete and it is inappropriate to use a specific MR angular-dependent correlation as the sole criterion in determining the origin of AMR or ascertaining the exclusive existence of SMR.

  8. Enhanced Magnetoresistance in Molecular Junctions by Geometrical Optimization of Spin-Selective Orbital Hybridization.

    Science.gov (United States)

    Rakhmilevitch, David; Sarkar, Soumyajit; Bitton, Ora; Kronik, Leeor; Tal, Oren

    2016-03-01

    Molecular junctions based on ferromagnetic electrodes allow the study of electronic spin transport near the limit of spintronics miniaturization. However, these junctions reveal moderate magnetoresistance that is sensitive to the orbital structure at their ferromagnet-molecule interfaces. The key structural parameters that should be controlled in order to gain high magnetoresistance have not been established, despite their importance for efficient manipulation of spin transport at the nanoscale. Here, we show that single-molecule junctions based on nickel electrodes and benzene molecules can yield a significant anisotropic magnetoresistance of up to ∼200% near the conductance quantum G0. The measured magnetoresistance is mechanically tuned by changing the distance between the electrodes, revealing a nonmonotonic response to junction elongation. These findings are ascribed with the aid of first-principles calculations to variations in the metal-molecule orientation that can be adjusted to obtain highly spin-selective orbital hybridization. Our results demonstrate the important role of geometrical considerations in determining the spin transport properties of metal-molecule interfaces. PMID:26926769

  9. Hybrid Molecular and Spin Dynamics Simulations for Ensembles of Magnetic Nanoparticles for Magnetoresistive Systems

    Directory of Open Access Journals (Sweden)

    Lisa Teich

    2015-11-01

    Full Text Available The development of magnetoresistive sensors based on magnetic nanoparticles which are immersed in conductive gel matrices requires detailed information about the corresponding magnetoresistive properties in order to obtain optimal sensor sensitivities. Here, crucial parameters are the particle concentration, the viscosity of the gel matrix and the particle structure. Experimentally, it is not possible to obtain detailed information about the magnetic microstructure, i.e., orientations of the magnetic moments of the particles that define the magnetoresistive properties, however, by using numerical simulations one can study the magnetic microstructure theoretically, although this requires performing classical spin dynamics and molecular dynamics simulations simultaneously. Here, we present such an approach which allows us to calculate the orientation and the trajectory of every single magnetic nanoparticle. This enables us to study not only the static magnetic microstructure, but also the dynamics of the structuring process in the gel matrix itself. With our hybrid approach, arbitrary sensor configurations can be investigated and their magnetoresistive properties can be optimized.

  10. Room Temperature Giant and Linear Magnetoresistance in Topological Insulator Bi2Te3 Nanosheets

    Science.gov (United States)

    Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao

    2012-06-01

    Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi2Te3 topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

  11. Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, H. [PBI-Dansensor A/S (Denmark); Toft Soerensen, O. [Risoe National Lab., Materials Research Dept. (Denmark)

    1999-10-01

    A new type of ceramic oxygen sensors based on semiconducting oxides was developed in this project. The advantage of these sensors compared to standard ZrO{sub 2} sensors is that they do not require a reference gas and that they can be produced in small sizes. The sensor design and the techniques developed for production of these sensors are judged suitable by the participating industry for a niche production of a new generation of oxygen sensors. Materials research on new oxygen ion conducting conductors both for applications in oxygen sensors and in fuel was also performed in this project and finally a new process was developed for fabrication of ceramic tubes by dip-coating. (EHS)

  12. Sensors

    CERN Document Server

    Pigorsch, Enrico

    1997-01-01

    This is the 5th edition of the Metra Martech Directory "EUROPEAN CENTRES OF EXPERTISE - SENSORS." The entries represent a survey of European sensors development. The new edition contains 425 detailed profiles of companies and research institutions in 22 countries. This is reflected in the diversity of sensors development programmes described, from sensors for physical parameters to biosensors and intelligent sensor systems. We do not claim that all European organisations developing sensors are included, but this is a good cross section from an invited list of participants. If you see gaps or omissions, or would like your organisation to be included, please send details. The data base invites the formation of effective joint ventures by identifying and providing access to specific areas in which organisations offer collaboration. This issue is recognised to be of great importance and most entrants include details of collaboration offered and sought. We hope the directory on Sensors will help you to find the ri...

  13. Magnetoresistive multilayers deposited on the AAO membranes

    Energy Technology Data Exchange (ETDEWEB)

    Malkinski, Leszek M. [Advanced Materials Research Institute, University of New Orleans, 2000 Lakeshore Drive, New Orleans, LA 70148 (United States)]. E-mail: lmalkins@uno.edu; Chalastaras, Athanasios [Advanced Materials Research Institute, University of New Orleans, 2000 Lakeshore Drive, New Orleans, LA 70148 (United States); Vovk, Andriy [Advanced Materials Research Institute, University of New Orleans, 2000 Lakeshore Drive, New Orleans, LA 70148 (United States); Jung, Jin-Seung [Department of Chemistry, Kangnung National University, Kangnung 210702 (Korea, Republic of) ; Kim, Eun-Mee [Department of Chemistry, Kangnung National University, Kangnung 210702 (Korea, Republic of) ; Jun, Jong-Ho [Department of Applied Chemistry, Kunkuk University, Chungju 151747 (Korea, Republic of) ; Ventrice, Carl A. [Advanced Materials Research Institute, University of New Orleans, 2000 Lakeshore Drive, New Orleans, LA 70148 (United States)

    2005-02-01

    Silicon and GaAs wafers are the most commonly used substrates for deposition of giant magnetoresistive (GMR) multilayers. We explored a new type of a substrate, prepared electrochemically by anodization of aluminum sheets, for deposition of GMR multilayers. The surface of this AAO substrate consists of nanosized hemispheres organized in a regular hexagonal array. The current applied along the substrate surface intersects many magnetic layers in the multilayered structure, which results in enhancement of giant magnetoresistance effect. The GMR effect in uncoupled Co/Cu multilayers was significantly larger than the magnetoresistance of similar structures deposited on Si.

  14. Magnetoresistance of Multiwalled Carbon Nanotube Yarns

    Institute of Scientific and Technical Information of China (English)

    SHENG Lei-Mei; GAO Wei; CAO Shi-Xun; ZHANG Jin-Cang

    2008-01-01

    We measure zero-field resistivity and magnetoresistance of multiwalled carbon nanotube yarns (CNTYs). The CNTYs are drawn from superaligned multiwalled carbon nanotube arrays synthesized by the low-pressure chemical vapour deposition method. The zero-field resistivity shows a logarithmic decrease from 2 K to 300 K. In the presence of a magnetic field applied perpendicular to the yarn axis, a pronounced negative magnetoresistance is observed. A magnetoresistance ratio of 22% is obtained. These behaviours can be explained by the weak localization effect.

  15. Spinodal decomposition and giant magnetoresistance

    International Nuclear Information System (INIS)

    We explore the relation of nanostructures with the appearance of giant magnetoresistance (GMR) in melt-spun CuCo ribbons. We find by energy-filtered transmission electron microscopy that the ribbons are composed of a periodic distribution of Co within the Cu, as in spinodal decomposition. The lamellar structure should thus be associated with GMR, as only a small percentage of the Co is present in the form of grains. This is counterintuitive, for no clear interfaces are present as required by standard models, and the period of the composition oscillation (43-52 nm) is an order of magnitude larger than the mean free paths for electrons. Upon annealing, a secondary spinodal decomposition appears following the same direction as the original

  16. Magnetoresistance Anisotropy in WTe2

    Science.gov (United States)

    Thoutam, Laxman Raju; Wang, Yonglei; Xiao, Zhili; Das, Saptarshi; Luican Mayer, Adina; Divan, Ralu; Crabtree, George W.; Kwok, Wai Kwong

    We report the angle dependence of the magnetoresistance in WTe2. Being a layered material, WTe2 is considered to be electronically two-dimensional (2D). Our results demonstrate that it is in fact 3D with an anisotropy of effective mass as small as 2. We measured the magnetic field dependence of the sample resistance R(H) at various angles between the applied magnetic field with respect to the c-axis of the crystal and found that they can be scaled based on the mass anisotropy, which changes from ~2 to ~5 with decreasing temperature in the Fermi liquid state. We will also discuss the origin of the turn-on temperature behavior in this material.

  17. Spin Hall Magnetoresistance Induced by a Non-Equilibrium Proximity Effect

    OpenAIRE

    Nakayama, H.; Althammer, M.; Chen, Y.-T.; Uchida, K.; Kajiwara, Y.; Kikuchi, D.; Ohtani, T.; Geprägs, S.; Opel, M.; Takahashi, S.; Gross, R.; Bauer, G. E. W.; Goennenwein, S. T. B.; Saitoh, E.

    2012-01-01

    We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y3Fe5O12, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it "spin Hal...

  18. Flexible magnetoimpidence sensor

    KAUST Repository

    Kavaldzhiev, M. N.

    2015-05-01

    Recently, flexible electronic devices have attracted increasing interest, due to the opportunities they promise for new applications such as wearable devices, where the components are required to flex during normal use[1]. In this light, different magnetic sensors, like microcoil, spin valve, giant magnetoresistance (GMR), magnetoimpedance (MI), have been studied previously on flexible substrates.

  19. Extraordinary Magnetoresistance Effect in Semiconductor/Metal Hybrid Structure

    KAUST Repository

    Sun, Jian

    2013-06-27

    In this dissertation, the extraordinary magnetoresistance (EMR) effect in semiconductor/metal hybrid structures is studied to improve the performance in sensing applications. Using two-dimensional finite element simulations, the geometric dependence of the output sensitivity, which is a more relevant parameter for EMR sensors than the magnetoresistance (MR), is studied. The results show that the optimal geometry in this case is different from the geometry reported before, where the MR ratio was optimized. A device consisting of a semiconductor bar with length/width ratio of 5~10 and having only 2 contacts is found to exhibit the highest sensitivity. A newly developed three-dimensional finite element model is employed to investigate parameters that have been neglected with the two dimensional simulations utilized so far, i.e., thickness of metal shunt and arbitrary semiconductor/metal interface. The simulations show the influence of those parameters on the sensitivity is up to 10 %. The model also enables exploring the EMR effect in planar magnetic fields. In case of a bar device, the sensitivity to planar fields is about 15 % to 20 % of the one to perpendicular fields. 5 A “top-contacted” structure is proposed to reduce the complexity of fabrication, where neither patterning of the semiconductor nor precise alignment is required. A comparison of the new structure with a conventionally fabricated device shows that a similar magnetic field resolution of 24 nT/√Hz is obtained. A new 3-contact device is developed improving the poor low-field sensitivity observed in conventional EMR devices, resulting from its parabolic magnetoresistance response. The 3-contact device provides a considerable boost of the low field response by combining the Hall effect with the EMR effect, resulting in an increase of the output sensitivity by 5 times at 0.01 T compared to a 2-contact device. The results of this dissertation provide new insights into the optimization of EMR devices

  20. Tunneling magnetoresistive heads for magnetic data storage.

    Science.gov (United States)

    Mao, Sining

    2007-01-01

    Spintronics is emerging to be a new form of nanotechnologies, which utilizes not only the charge but also spin degree of freedom of electrons. Spin-dependent tunneling transport is one of the many kinds of physical phenomena involving spintronics, which has already found industrial applications. In this paper, we first provide a brief review on the basic physics and materials for magnetic tunnel junctions, followed more importantly by a detailed coverage on the application of magnetic tunneling devices in magnetic data storage. The use of tunneling magnetoresistive reading heads has helped to maintain a fast growth of areal density, which is one of the key advantages of hard disk drives as compared to solid-state memories. This review is focused on the first commercial tunneling magnetoresistive heads in the industry at an areal density of 80 approximately 100 Gbit/in2 for both laptop and desktop Seagate hard disk drive products using longitudinal media. The first generation tunneling magnetoresistive products utilized a bottom stack of tunnel junctions and an abutted hard bias design. The output signal amplitude of these heads was 3 times larger than that of comparable giant magnetoresistive devices, resulting in a 0.6 decade bit error rate gain over the latter. This has enabled high component and drive yields. Due to the improved thermal dissipation of vertical geometry, the tunneling magnetoresistive head runs cooler with a better lifetime performance, and has demonstrated similar electrical-static-discharge robustness as the giant magnetoresistive devices. It has also demonstrated equivalent or better process and wafer yields compared to the latter. The tunneling magnetoresistive heads are proven to be a mature and capable reader technology. Using the same head design in conjunction with perpendicular recording media, an areal density of 274 Gbit/in2 has been demonstrated, and advanced tunneling magnetoresistive heads can reach 311 Gbit/in2. Today, the

  1. Temperature-Dependent Three-Dimensional Anisotropy of the Magnetoresistance in WTe2

    Science.gov (United States)

    Thoutam, L. R.; Wang, Y. L.; Xiao, Z. L.; Das, S.; Luican-Mayer, A.; Divan, R.; Crabtree, G. W.; Kwok, W. K.

    2015-07-01

    Extremely large magnetoresistance (XMR) was recently discovered in WTe2 , triggering extensive research on this material regarding the XMR origin. Since WTe2 is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe2 : (1) WTe2 is electronically 3D with a mass anisotropy as low as 2, as revealed by the 3D scaling behavior of the resistance R (H ,θ )=R (ɛθH ) with ɛθ=(cos2θ +γ-2sin2θ )1 /2 , θ being the magnetic field angle with respect to the c axis of the crystal and γ being the mass anisotropy and (2) the mass anisotropy γ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe2 , including the origin of the remarkable "turn-on" behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition.

  2. Temperature-Dependent Three-Dimensional Anisotropy of the Magnetoresistance in WTe_{2}.

    Science.gov (United States)

    Thoutam, L R; Wang, Y L; Xiao, Z L; Das, S; Luican-Mayer, A; Divan, R; Crabtree, G W; Kwok, W K

    2015-07-24

    Extremely large magnetoresistance (XMR) was recently discovered in WTe_{2}, triggering extensive research on this material regarding the XMR origin. Since WTe_{2} is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe_{2}: (1) WTe_{2} is electronically 3D with a mass anisotropy as low as 2, as revealed by the 3D scaling behavior of the resistance R(H,θ)=R(ϵ_{θ}H) with ϵ_{θ}=(cos^{2}θ+γ^{-2}sin^{2}θ)^{1/2}, θ being the magnetic field angle with respect to the c axis of the crystal and γ being the mass anisotropy and (2) the mass anisotropy γ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe_{2}, including the origin of the remarkable "turn-on" behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition. PMID:26252701

  3. Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals

    OpenAIRE

    Yang-Yang Lv; Bin-Bin Zhang; Xiao Li; Bin Pang; Fan Zhang; Da-Jun Lin; Jian Zhou; Shu-Hua Yao; Chen, Y. B.; Shan-Tao Zhang; Minghui Lu; Zhongkai Liu; Yulin Chen; Yan-Feng Chen

    2016-01-01

    Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~105%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance a...

  4. Spin Hall magnetoresistance at high temperatures

    International Nuclear Information System (INIS)

    The temperature dependence of spin Hall magnetoresistance (SMR) in Pt/Y3Fe5O12 (YIG) bilayer films has been investigated in a high temperature range from room temperature to near the Curie temperature of YIG. The experimental results show that the magnitude of the magnetoresistance ratio induced by the SMR monotonically decreases with increasing the temperature and almost disappears near the Curie temperature. We found that, near the Curie temperature, the temperature dependence of the SMR in the Pt/YIG film is steeper than that of a magnetization curve of the YIG; the critical exponent of the magnetoresistance ratio is estimated to be 0.9. This critical behavior of the SMR is attributed mainly to the temperature dependence of the spin-mixing conductance at the Pt/YIG interface

  5. Spin Hall magnetoresistance at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Uchida, Ken-ichi, E-mail: kuchida@imr.tohoku.ac.jp [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); PRESTO, Japan Science and Technology Agency, Saitama 332-0012 (Japan); Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577 (Japan); Qiu, Zhiyong [Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577 (Japan); WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Kikkawa, Takashi; Iguchi, Ryo [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577 (Japan); Saitoh, Eiji [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); Spin Quantum Rectification Project, ERATO, Japan Science and Technology Agency, Sendai 980-8577 (Japan); WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan); CREST, Japan Science and Technology Agency, Tokyo 102-0076 (Japan); Advanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195 (Japan)

    2015-02-02

    The temperature dependence of spin Hall magnetoresistance (SMR) in Pt/Y{sub 3}Fe{sub 5}O{sub 12} (YIG) bilayer films has been investigated in a high temperature range from room temperature to near the Curie temperature of YIG. The experimental results show that the magnitude of the magnetoresistance ratio induced by the SMR monotonically decreases with increasing the temperature and almost disappears near the Curie temperature. We found that, near the Curie temperature, the temperature dependence of the SMR in the Pt/YIG film is steeper than that of a magnetization curve of the YIG; the critical exponent of the magnetoresistance ratio is estimated to be 0.9. This critical behavior of the SMR is attributed mainly to the temperature dependence of the spin-mixing conductance at the Pt/YIG interface.

  6. Magnetoresistance of galfenol-based magnetic tunnel junction

    Directory of Open Access Journals (Sweden)

    B. Gobaut

    2015-12-01

    Full Text Available The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR effect of up to 11.5% in amplitude.

  7. Magnetoresistance of galfenol-based magnetic tunnel junction

    Energy Technology Data Exchange (ETDEWEB)

    Gobaut, B., E-mail: benoit.gobaut@elettra.eu [Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, Area Science Park, 34149 Trieste (Italy); Vinai, G.; Castán-Guerrero, C.; Krizmancic, D.; Panaccione, G.; Torelli, P. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Rafaqat, H. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); ICTP, Trieste (Italy); Roddaro, S. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, 56127 Pisa (Italy); Rossi, G. [Laboratorio TASC, IOM-CNR, S.S. 14km 163.5, Basovizza, 34149 Trieste (Italy); Dipartimento di Fisica, Università di Milano, via Celoria 16, 20133 Milano (Italy); Eddrief, M.; Marangolo, M. [Sorbonne Universités, UPMC Paris 06, CNRS-UMR 7588, Institut des Nanosciences de Paris, 75005, Paris (France)

    2015-12-15

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe{sub 1-x}Ga{sub x}) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching have been combined to obtain 20x20 micron sized pillars. The obtained structures show tunneling conductivity across the junction and a tunnel magnetoresistance (TMR) effect of up to 11.5% in amplitude.

  8. Dynamic Vehicle Detection via the Use of Magnetic Field Sensors

    Directory of Open Access Journals (Sweden)

    Vytautas Markevicius

    2016-01-01

    Full Text Available The vehicle detection process plays the key role in determining the success of intelligent transport management system solutions. The measurement of distortions of the Earth’s magnetic field using magnetic field sensors served as the basis for designing a solution aimed at vehicle detection. In accordance with the results obtained from research into process modeling and experimentally testing all the relevant hypotheses an algorithm for vehicle detection using the state criteria was proposed. Aiming to evaluate all of the possibilities, as well as pros and cons of the use of anisotropic magnetoresistance (AMR sensors in the transport flow control process, we have performed a series of experiments with various vehicles (or different series from several car manufacturers. A comparison of 12 selected methods, based on either the process of determining the peak signal values and their concurrence in time whilst calculating the delay, or by measuring the cross-correlation of these signals, was carried out. It was established that the relative error can be minimized via the Z component cross-correlation and Kz criterion cross-correlation methods. The average relative error of vehicle speed determination in the best case did not exceed 1.5% when the distance between sensors was set to 2 m.

  9. Probing giant magnetoresistance with THz spectroscopy

    DEFF Research Database (Denmark)

    Jin, Zuanming; Tkach, Alexander; Casper, Frederick;

    2014-01-01

    We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined. © 2014 OSA.......We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined. © 2014 OSA....

  10. Current-perpendicular-to-the-plane giant magnetoresistance in spin-valves with AgSn alloy spacers

    International Nuclear Information System (INIS)

    We investigate the use of AgSn alloys as the spacer layer in current-perpendicular-to-the-plane magnetoresistance devices. Alloying with Sn increases resistivity but results in a reasonably long (>10 nm) spin-diffusion length, so large magnetoresistance can be achieved with thin AgSn spacers. Compared to Ag thin films, AgSn forms smaller grain sizes, reduced roughness, and exhibits less interdiffusion upon annealing, resulting in decreased interlayer magnetic coupling in exchange biased spin-valves. AgSn also shows improved corrosion resistance compared to Ag, which is advantageous for nanofabrication, including magnetic recording head sensors. Combining a AgSn spacer with Co-based Heusler alloy ferromagnet in an exchange biased, polycrystalline trilayer thinner than 12 nm results in magnetoresistance values up to 15% at room temperature

  11. Temperature dependence of magnetoresistance in Co/ITO multilayers

    International Nuclear Information System (INIS)

    The temperature dependence of resistance and giant magnetoresistance (GMR) has been investigated for Co/ITO multilayers in the temperature range of 15 and 300 K. The resistance of Co/ITO multilayers decreases with increasing temperature. The temperature dependence of resistance is found to obey Mott's 1/4 law below 60 K. The giant magnetoresistance and the net change of giant magnetoresistance of the samples decrease with increasing temperature. The temperature dependence of the net change of giant magnetoresistance can be fitted by a power law Tn with n equal 1. The electron-magnon scattering produces a destructive influence on the giant magnetoresistance effect.

  12. Optical studies of colossal magnetoresistance

    International Nuclear Information System (INIS)

    Full text: Colossal-magnetoresistance (CMR) materials are so named because they exhibit a large change in their electrical resistance in a magnetic field. This immediately suggests their application in magnetic memory, recording, sensing and switching devices. This intrinsic technological interest has also generated much fundamental research in CMR materials, with the goal of accounting for their fascinating behaviour. CMR occurs in perovskite manganese oxides, such as the lanthanum manganites (LaMnO3) doped with divalent ions substituting for La. The CMR mechanism is known to be related to the double exchange mechanism and to lattice distortion, but the details still generate intense debate. Millis (1998) summarised: 'Although a suggestive qualitative agreement between theory and experiment exists, much more needs to be done'. The main line of research has centred on the metalinsulator (Ml) transition during the phase change from paramagnetic-insulator (PMI) to ferromagnetic metal (FMM) that occurs at the Curie temperature, Tc, typically 200-250 K, but the phase diagram, usually represented as a function of doping fraction and temperature, is extremely rich. In this respect the CMR materials are similar, on the one hand, to organic conductors, and to a lesser extent, to high-temperature superconductors (HTS). Relatively little optical work on CMR materials has been reported in the literature. This is in spite of the recognition that an additional mechanism, proposed to be an electron-phonon interaction, is necessary as well as the earlier established double-exchange to account for the CMR effect, and that optical methods are sensitive to phonon modes, as well as to charge carrier dynamics. In particular, experimental evidence (De Teresa et al. 1997) indicates the existence of magnetic polarons above Tc, consistent with a 'small polaron' model. Jahn-Teller coupling is also important in explaining CMR (Popovic and Satpathy 2000). Our reflectivity measurements (Lewis

  13. Anisotropic Stars II Stability

    CERN Document Server

    Dev, K; Dev, Krsna; Gleiser, Marcelo

    2003-01-01

    We investigate the stability of self-gravitating spherically symmetric anisotropic spheres under radial perturbations. We consider both the Newtonian and the full general-relativistic perturbation treatment. In the general-relativistic case, we extend the variational formalism for spheres with isotropic pressure developed by Chandrasekhar. We find that, in general, when the tangential pressure is greater than the radial pressure, the stability of the anisotropic sphere is enhanced when compared to isotropic configurations. In particular, anisotropic spheres are found to be stable for smaller values of the adiabatic index $\\gamma$.

  14. High magnetoresistance in inhomogeneous bismuth microwires

    International Nuclear Information System (INIS)

    The present paper describes investigation of the dependence of magnetoresistance of microwires made of semimetal or semiconductor materials with high electric mobility doped with impurities introduced in the form of deposits at solidification. Till present it has been assumed that microscopic inhomogeneity in semimetals or semiconductors leads to a decrease of mobilities due to additional dispersion of charge carriers on impurities. Wolfe et al. have shown that impurities in the material with high mobility lead to an increase of mobilities due to geometric effect. In our case it is shown that presence of magnetic impurities in bismuth semimetal characterized by high mobility leads to an increase of magnetoresistance. This increase is very important for the technology of magnetic field converters and especially for application of high velocities of record of a magnetic head with a high capability of magnetic record. (authors)

  15. Superconductivity emerging from suppressed large magnetoresistant state in WTe2

    OpenAIRE

    Kang, Defen; Zhou, Yazhou; Yi, Wei; Yang, Chongli; Guo, Jing; Shi, Youguo; Zhang, Shan; Wang, Zhe; Zhang, Chao; Jiang, Sheng; Li, Aiguo; Yang, Ke; Wu, Qi; Zhang, Guangming; Sun, Liling

    2015-01-01

    The recent discovery of large and non-saturating magnetoresistance (LMR) in WTe2 provides a unique playground to find new phenomena and significant perspective for potential applications. Here we report the first observation of superconductivity near the proximity of suppressed LMR state in pressurized WTe2 through high-pressure synchrotron X-ray diffraction, electrical resistance, magnetoresistance, and ac magnetic susceptibility measurements. It is found that the positive magnetoresistance ...

  16. The Effect of Dopants on the Magnetoresistance of WTe2

    OpenAIRE

    Flynn, Steven; Ali, Mazhar; Cava, R. J.

    2015-01-01

    Elucidating the nature of the large, non-saturating magnetoresistance in WTe2 is a significant step in functionalizing this phenomenon for applications. Here, Mo, Re, and Ta doped WTe2 are compared to determine whether isovalent and aliovalent substitutions have different effects on the large magnetoresistance. By 1% substitution, isoelectronic doping reduces the magnetoresistance by a factor of 1.2 with an apparent linear trend, whereas aliovalent doping reduces the effect by over an order o...

  17. Tunnel magnetoresistance and interfacial electronic state

    OpenAIRE

    Inoue, J; Itoh, H.

    2002-01-01

    We study the relation between tunnel magnetoresistance (TMR) and interfacial electronic states modified by magnetic impurities introduced at the interface of the ferromagnetic tunnel junctions, by making use of the periodic Anderson model and the linear response theory. It is indicated that the TMR ratio is strongly reduced depending on the position of the $d$-levels of impurities, based on reduction in the spin-dependent $s$-electron tunneling in the majority spin state. The results are comp...

  18. Robust linear magnetoresistance in WTe2

    OpenAIRE

    Pan, Xing-Chen; Pan, Yiming; Jiang, Juan; Zuo, Huakun; Liu, Huimei; Chen, Xuliang; Wei, Zhongxia; Zhang, Shuai; Wang, Zhihe; Wan, Xiangang; Yang, Zhaorong; Feng, Donglai; Xia, Zhengcai; Li, Liang; Song, Fengqi

    2015-01-01

    Unsaturated magnetoresistance (MR) has been reported in WTe2, and remains irrepressible up to very high field. Intense optimization of the crystalline quality causes a squarely-increasing MR, as interpreted by perfect compensation of opposite carriers. Herein we report our observation of linear MR (LMR) in WTe2 crystals, the onset of which is first identified by constructing the mobility spectra of the MR at low fields. The LMR further intensifies and predominates at fields higher than 20 Tes...

  19. Magnetoresistance studies on barium doped nanocrystalline manganite

    International Nuclear Information System (INIS)

    An energetically attractive, simple, fast and a novel low temperature (300 deg. C) solution combustion route for the synthesis of crystalline and homogeneous nanoparticles of lanthanum barium manganese oxide La0.9Ba0.1MnO3+δ (LBMO) is reported. Formation and homogeneity of the solid solutions have been confirmed by powder X-ray diffraction (PXRD) and energy dispersive X-ray analysis (EDS) respectively. The Rietveld analysis shows both as-formed as well as calcined samples are in cubic phase with space group pm3m. The microstructure and agglomerated particle size of the compounds are examined by scanning electron microscope. Infrared spectroscopy revealed that both Mn-O-Mn bending mode and Mn-O stretching mode are influenced by calcination temperature. The magnetoresistance measurement on sintered LBMO pellet exhibits a broad metal-insulator transition (TM-I) at around 228 K. At 1 T applied magnetic field, LBMO shows magnetoresistance (MR) of 10%, whereas for 4 and 7 T, the negative magnetoresistance values are in the range 51 and 59% respectively at TM-I. The experimental resistivity data of the present investigation are fitted to a simple empirical equation in order to understand conduction mechanism in this compound

  20. Anisotropic Chemical Reactor with Correlation Spectroscopic Control of Nanoparticles Size

    Directory of Open Access Journals (Sweden)

    A.G. Lazarenko

    2014-04-01

    Full Text Available This paper proposes a new kind of chemical reactor for nanoparticles synthesis with real-time control of size by correlation spectroscopy methods. The liquid pumping in the reactor is attained by a heater and / or cooler anisotropic placing in a reactor with a bath consisting of two communicating vessels connected by two tubes with transparent portion. When driving the fluid through the transparent area of the narrowed tube particle size is measured by a sensor or sensors. To increase the speed of cyclic movement and mixing of liquid the chemical rector can be supplemented with a mechanical stirrer also anisotropic in shape.

  1. Towards sub-200 nm nano-structuring of linear giant magneto-resistive spin valves by a direct focused ion beam milling process

    International Nuclear Information System (INIS)

    In this work, we present a detailed investigation of a focused ion beam (FIB) assisted nano-structuring process for giant magneto-resistive (GMR) spin valve sensors. We have performed a quantitative study of the dependence of the GMR ratio as well as the sensor resistance on the ion dose, which is implanted in the active region of our sensors. These findings are correlated with the decrease of magneto-resistive properties after micro- and nano-structuring by the FIB and reveal the importance of ion damage which limits the applicability of FIB milling to GMR devices in the low μm range. Deposition of a protective layer (50 nm SiO2) on top of the sensor structure before milling leads to a preservation of the magneto-resistive properties after the milling procedure down to sensor dimensions of ∼300 nm. The reduction of the sensor dimensions to the nanometer regime is accompanied by a shift of the GMR curves, and a modification of the saturation behavior. Both effects can be explained by a micromagnetic model including the magnetic interaction of free and pinned layer as well as the effect of the demagnetizing field of the free layer on the sensor behavior. The results demonstrate that the FIB technology can be successfully used to prepare spintronic nanostructures

  2. Influence of Si buffer layer on the giant magnetoresistance effect in Co/Cu/Co sandwiches

    Institute of Scientific and Technical Information of China (English)

    李冠雄; 沈鸿烈; 沈勤我; 李铁; 邹世昌

    2000-01-01

    The Co/Cu/Co sandwiches with a semiconductor Si buffer layer were prepared by high vacuum electron-beam evaporation. The influence of the Si buffer layer with different thickness on the giant magnetoresistance (GMR) effect in the Co/Cu/Co sandwiches was investigated. It was found that the GMR showed an obvious anisotropy when the thickness of Si buffer layer was larger than or equal to 0.9 nm, and that the GMR was basically isotropic with an Si buffer layer thinner than 0.9 nm. The anisotropic behavior of GMR can be ascribed to the in-plane magnetic anisotropy in the sandwiches. Due to the interdiffusion at the Si buffer/Co interface, a Co2Si interface layer with a good (301) texture formed and induced the in-plane magnetic anisotropy in the sandwiches. The dependence of the crystalline texture of the sandwiches on the thickness of Si buffer layer was also studied.

  3. Study of the magnetic microstructure of Ni/NiO nanogranular samples above the electric percolation threshold by magnetoresistance measurements

    International Nuclear Information System (INIS)

    Magnetoresistance measurements have been exploited to gain information on the magnetic microstructure of two Ni/NiO nanogranular materials consisting of Ni nanocrystallites (mean size of the order of 10 nm) embedded in a NiO matrix and differing in the amount of metallic Ni, ∼33 and ∼61 vol%. The overall conductance of both samples is metallic in character, indicating that the Ni content is above the percolation threshold for electric conductivity; the electric resistivity is two orders of magnitude smaller in the sample with higher Ni fraction (10-5 Ωm against 10-3 Ωm). An isotropic, spin-dependent magnetoresistance has been measured in the sample with lower Ni content, whereas both isotropic and anisotropic magnetoresistance phenomena coexist in the other material. This study, associated with magnetization loop measurements and the comparison with the exchange bias effect, allows one to conclude that in the sample with lower Ni content neither the physical percolation of the Ni nanocrystallites nor the magnetic percolation (i.e., formation of a homogeneous ferromagnetic network) are achieved; in the other sample physical percolation is reached while magnetic percolation is still absent. In both behaviors, a key role is played by the NiO matrix, which brings about a magnetic nanocrystallite/matrix interface exchange energy term and rules both the direct exchange interaction among Ni nanocrystallites and the magnetotransport properties of these nanogranular materials. (paper)

  4. Averaging anisotropic cosmologies

    International Nuclear Information System (INIS)

    We examine the effects of spatial inhomogeneities on irrotational anisotropic cosmologies by looking at the average properties of anisotropic pressure-free models. Adopting the Buchert scheme, we recast the averaged scalar equations in Bianchi-type form and close the standard system by introducing a propagation formula for the average shear magnitude. We then investigate the evolution of anisotropic average vacuum models and those filled with pressureless matter. In the latter case we show that the backreaction effects can modify the familiar Kasner-like singularity and potentially remove Mixmaster-type oscillations. The presence of nonzero average shear in our equations also allows us to examine the constraints that a phase of backreaction-driven accelerated expansion might put on the anisotropy of the averaged domain. We close by assessing the status of these and other attempts to define and calculate 'average' spacetime behaviour in general relativity

  5. Anisotropic Metamaterial Optical Fibers

    CERN Document Server

    Pratap, Dheeraj; Pollock, Justin G; Iyer, Ashwin K

    2014-01-01

    Internal physical structure can drastically modify the properties of waveguides: photonic crystal fibers are able to confine light inside a hollow air core by Bragg scattering from a periodic array of holes, while metamaterial loaded waveguides for microwaves can support propagation at frequencies well below cutoff. Anisotropic metamaterials assembled into cylindrically symmetric geometries constitute light-guiding structures that support new kinds of exotic modes. A microtube of anodized nanoporous alumina, with nanopores radially emanating from the inner wall to the outer surface, is a manifestation of such an anisotropic metamaterial optical fiber. The nanopores, when filled with a plasmonic metal such as silver or gold, greatly increase the electromagnetic anisotropy. The modal solutions in anisotropic circular waveguides can be uncommon Bessel functions with imaginary orders.

  6. Magnetoresistance in molybdenite (MoS2) crystals

    International Nuclear Information System (INIS)

    The principal magnetoresistance ratios of molybdenite (MoS2), the naturally occurring semiconducting crystal, have been investigated at magnetic fields ranging from 4.5 KOe and within the temperature range 3000K to 7000K. Unlike some previous observations, magnetoresistance has been found to be negative. (author)

  7. Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals

    Science.gov (United States)

    Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Pang, Bin; Zhang, Fan; Lin, Da-Jun; Zhou, Jian; Yao, Shu-Hua; Chen, Y. B.; Zhang, Shan-Tao; Lu, Minghui; Liu, Zhongkai; Chen, Yulin; Chen, Yan-Feng

    2016-05-01

    Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~105%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe1.80) and the highest Mo isovalent substitution samples (W0.7Mo0.3Te2) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe2.

  8. A phenomenological Landauer-type theory on colossal magnetoresistance

    Science.gov (United States)

    Ding, M.; Tian, G.-S.; Lin, T.-H.

    1996-12-01

    A two-dimensional interacting magnetic domains model is examined to explain the colossal magnetoresistance (CMR) recently observed in manganese-oxides. Electrons transport properties were studied by using Landauer's multichannel transport theory and recursive Green's function technique. Colossal magnetoresistance shows up in this system. The temperature dependence of system's MR is also studied.

  9. Anisotropic elastic plates

    CERN Document Server

    Hwu, Chyanbin

    2010-01-01

    As structural elements, anisotropic elastic plates find wide applications in modern technology. The plates here are considered to be subjected to not only in plane load but also transverse load. In other words, both plane and plate bending problems as well as the stretching-bending coupling problems are all explained in this book. In addition to the introduction of the theory of anisotropic elasticity, several important subjects have are discussed in this book such as interfaces, cracks, holes, inclusions, contact problems, piezoelectric materials, thermoelastic problems and boundary element a

  10. Anisotropic Weyl invariance

    CERN Document Server

    Pérez-Nadal, Guillem

    2016-01-01

    We consider a non-relativistic free scalar field theory with a type of anisotropic scale invariance in which the number of coordinates "scaling like time" is generically greater than one. We propose the Cartesian product of two curved spaces, with the metric of each space parameterized by the other space, as a notion of curved background to which the theory can be extended. We study this type of geometries, and find a family of extensions of the theory to curved backgrounds in which the anisotropic scale invariance is promoted to a local, Weyl-type symmetry.

  11. Tunnel magnetoresistance of an organic molecule junction

    International Nuclear Information System (INIS)

    Coherent spin-dependent electronic transport is investigated in a molecular junction based on oligophenylene attached to two the semi-infinite ferromagnetic (FM) electrodes with finite cross sections. The work is based on the tight-binding Hamiltonian model and within the framework of a non-equilibrium Green's function (NEGF) technique. It is shown that tunnel magnetoresistance (TMR) of molecular junction can be large (over 60 %) by adjusting the related parameters, and depends on: (i) the applied voltages and (ii) the length of oligophenylele molecule.

  12. Anomalous magnetoresistance on the topological surface

    International Nuclear Information System (INIS)

    We report theoretical study of charge transport in two-dimensional ferromag-net/ferromagnet junction on a topological insulator. The conductance across the interface shows anomalous dependence on the directions of the magnetizations of the two ferromagnets. This stems from the way how the wavefunctions connect between both sides. It is found that the conductance depends strongly on the in-plane direction of the magnetization. Moreover, in stark contrast to the conventional magnetoresistance effect, the conductance at the parallel configuration can be much smaller than that at the antiparallel configuration.

  13. Giant magnetoresistance in bilayer graphene nanoflakes

    Science.gov (United States)

    Farghadan, Rouhollah; Farekiyan, Marzieh

    2016-09-01

    Coherent spin transport through bilayer graphene (BLG) nanoflakes sandwiched between two electrodes made of single-layer zigzag graphene nanoribbon was investigated by means of Landauer-Buttiker formalism. Application of a magnetic field only on BLG structure as a channel produces a perfect spin polarization in a large energy region. Moreover, the conductance could be strongly modulated by magnetization of the zigzag edge of AB-stacked BLG, and the junction, entirely made of carbon, produces a giant magnetoresistance (GMR) up to 100%. Intestinally, GMR and spin polarization could be tuned by varying BLG width and length. Generally, MR in a AB-stacked BLG strongly increases (decreases) with length (width).

  14. Theory of CPP magnetoresistance in spring ferromagnets

    Science.gov (United States)

    Inoue, Jun-ichiro; Mitani, Seiji; Itoh, Hiroyoshi; Takanashi, Koki

    2004-05-01

    Magnetoresistance (MR) for currents perpendicular to planes (CPP) is calculated for spring ferromagnets in which an artificial domain wall is formed by external magnetic fields. We consider two contributions to the MR: one is caused by a twisting of the magnetization and the other is due to a mismatch of the electronic structure at interfaces. We show that the resulting MR may show a non-monotonic dependence on the width of the domain walls and can be either positive or negative according to the magnitude of these two contributions.

  15. Theory of CPP magnetoresistance in spring ferromagnets

    International Nuclear Information System (INIS)

    Magnetoresistance (MR) for currents perpendicular to planes (CPP) is calculated for spring ferromagnets in which an artificial domain wall is formed by external magnetic fields. We consider two contributions to the MR: one is caused by a twisting of the magnetization and the other is due to a mismatch of the electronic structure at interfaces. We show that the resulting MR may show a non-monotonic dependence on the width of the domain walls and can be either positive or negative according to the magnitude of these two contributions

  16. TOPICAL REVIEW: Tunneling magnetoresistance from a symmetry filtering effect

    Directory of Open Access Journals (Sweden)

    William H Butler

    2008-01-01

    Full Text Available This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe–MgO–Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the read sensor in hard drives and may form the basis for a new type of magnetic memory.

  17. On the Newtonian anisotropic configurations

    Energy Technology Data Exchange (ETDEWEB)

    Shojai, F. [University of Tehran, Department of Physics, Tehran (Iran, Islamic Republic of); Institute for Research in Fundamental Sciences (IPM), Foundations of Physics Group, School of Physics, Tehran (Iran, Islamic Republic of); Fazel, M.R.; Stepanian, A. [University of Tehran, Department of Physics, Tehran (Iran, Islamic Republic of); Kohandel, M. [Alzahra University, Department of Sciences, Tehran (Iran, Islamic Republic of)

    2015-06-15

    In this paper we are concerned with the effects of an anisotropic pressure on the boundary conditions of the anisotropic Lane-Emden equation and the homology theorem. Some new exact solutions of this equation are derived. Then some of the theorems governing the Newtonian perfect fluid star are extended, taking the anisotropic pressure into account. (orig.)

  18. Anisotropic Lyra cosmology

    Indian Academy of Sciences (India)

    B B Bhowmik; A Rajput

    2004-06-01

    Anisotropic Bianchi Type-I cosmological models have been studied on the basis of Lyra's geometry. Two types of models, one with constant deceleration parameter and the other with variable deceleration parameter have been derived by considering a time-dependent displacement field.

  19. Anisotropic Ambient Volume Shading.

    Science.gov (United States)

    Ament, Marco; Dachsbacher, Carsten

    2016-01-01

    We present a novel method to compute anisotropic shading for direct volume rendering to improve the perception of the orientation and shape of surface-like structures. We determine the scale-aware anisotropy of a shading point by analyzing its ambient region. We sample adjacent points with similar scalar values to perform a principal component analysis by computing the eigenvectors and eigenvalues of the covariance matrix. In particular, we estimate the tangent directions, which serve as the tangent frame for anisotropic bidirectional reflectance distribution functions. Moreover, we exploit the ratio of the eigenvalues to measure the magnitude of the anisotropy at each shading point. Altogether, this allows us to model a data-driven, smooth transition from isotropic to strongly anisotropic volume shading. In this way, the shape of volumetric features can be enhanced significantly by aligning specular highlights along the principal direction of anisotropy. Our algorithm is independent of the transfer function, which allows us to compute all shading parameters once and store them with the data set. We integrated our method in a GPU-based volume renderer, which offers interactive control of the transfer function, light source positions, and viewpoint. Our results demonstrate the benefit of anisotropic shading for visualization to achieve data-driven local illumination for improved perception compared to isotropic shading. PMID:26529745

  20. Dynamics of Anisotropic Universes

    CERN Document Server

    Pérez, J

    2006-01-01

    We present a general study of the dynamical properties of Anisotropic Bianchi Universes in the context of Einstein General Relativity. Integrability results using Kovalevskaya exponents are reported and connected to general knowledge about Bianchi dynamics. Finally, dynamics toward singularity in Bianchi type VIII and IX universes are showed to be equivalent in some precise sence.

  1. Three-dimensional Anisotropy and Kohler's Rule Scaling of the Magnetoresistance in WTe2

    Science.gov (United States)

    Wang, Yong-Lei

    Tungsten ditelluride (WTe2) was recently discovered to have extremely large magnetoresistance (XMR) at low temperatures and exhibits a transformative 'turn-on' temperature behavior: when the applied magnetic field H is above a certain value, the resistivity versus temperature ρ (T) curve shows a minimum at a field dependent temperature T* (H) . Since WTe2 is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, it is typically considered to be a two dimensional (2D) material, whereby the anisotropic magnetoresistance is attributed only to the perpendicular component of the magnetic field. Moreover, the 'turn-on' temperature behavior has been interpreted as a magnetic-field-driven metal-insulator transition or attributed to an electronic structure change. In this talk I will report on two scaling behaviors of the magnetoresistance in WTe2. The first shows that the angle dependence of the magnetoresistance follows a conventional 3D anisotropy scaling and hence reveals the electrical 3D nature of WTe2. The second demonstrates that the ρ (T , H) curves, including those with 'turn-on' temperature behavior, can be scaled with Kohler's rule. The observed Kohler's rule scaling excludes the possible existence of a magnetic-field-driven metal-insulator transition or significant contribution of an electronic structure change to the low-temperature XMR in WTe2. It indicates that both the XMR and the 'turn-on' behavior originate from the high mobilities of the charge carriers, which are strongly temperature dependent in WTe2. We also derived quantitative expressions for the magnetic field dependence of the 'turn-on' temperature T* (H) and for the temperature dependence of the resistivity ρ (T* , H) at the onset of the XMR behavior. In collaboration with L. R. Thoutam, Z. L. Xiao, J. Hu, S. Das, Z. Q. Mao, J. Wei, R. Divan, A. Luican-Mayer, G. W. Crabtree, and W. K. Kwok This work was supported by the U.S. DOE, Office of Science, BES

  2. Anisotropic Chemical Reactor with Correlation Spectroscopic Control of Nanoparticles Size

    OpenAIRE

    A.G. Lazarenko; A.N. Andreev; A.V. Kanaev; K. Chhor

    2014-01-01

    This paper proposes a new kind of chemical reactor for nanoparticles synthesis with real-time control of size by correlation spectroscopy methods. The liquid pumping in the reactor is attained by a heater and / or cooler anisotropic placing in a reactor with a bath consisting of two communicating vessels connected by two tubes with transparent portion. When driving the fluid through the transparent area of the narrowed tube particle size is measured by a sensor or sensors. To increase the spe...

  3. Systematic study of doping dependence on linear magnetoresistance in p-PbTe

    Energy Technology Data Exchange (ETDEWEB)

    Schneider, J. M.; Chitta, V. A.; Oliveira, N. F. [Instituto de Física, Universidade de São Paulo, São Paulo, PB 66318, São Paulo CEP 05315-970 (Brazil); Peres, M. L., E-mail: marcelos@unifei.edu.br; Castro, S. de; Soares, D. A. W. [Departamento de Física e Química, Universidade Federal de Itajubá, Itajubá, PB 50, Minas Gerais CEP 37500-903 (Brazil); Wiedmann, S.; Zeitler, U. [Radboud University Nijmegen, Institute for Molecules and Materials, High Field Magnet Laboratory, Toernooiveld 7, 6525 ED Nijmegen (Netherlands); Abramof, E.; Rappl, P. H. O.; Mengui, U. A. [Laboratório Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, São José dos Campos, PB 515, São Paulo CEP 12201-970 (Brazil)

    2014-10-20

    We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF{sub 2} exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30 T. The linear magnetoresistance slope ΔR/ΔB is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF{sub 2} doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.

  4. Direct visualization of lead corona and its nanomolar colorimetric detection using anisotropic gold nanoparticles.

    Science.gov (United States)

    Dwivedi, Charu; Chaudhary, Abhishek; Gupta, Abhishek; Nandi, Chayan K

    2015-03-11

    The study presents dithiothreitol (DTT) functionalized anisotropic gold nanoparticles (GNP) based colorimetric sensor for detection of toxic lead ions in water. Our results demonstrate the selectivity and sensitivity of the developed sensor over various heavy metal ions with detection limit of ∼9 nM. The mechanism of sensing is explained on the basis of unique corona formation around the DTT functionalized anisotropic GNP. PMID:25719820

  5. Planar Hall Effect Sensors for Biodetection

    DEFF Research Database (Denmark)

    Rizzi, Giovanni

    -of-care devices can effectively reduce the time for the analysis and the costs that are related to a delay in the diagnosis. Many technologies are available for biosensing devices. In this work, we study and employ magnetic biosensing on magnetoresistive sensors. For magnetic biodetection magnetic beads are used...... as labels and planar Hall effect bridge (PHEB) magnetic field sensor as readout for the beads. The choice of magnetic beads as label is motivated by the lack of virtually any magnetic background from biological samples. Moreover, magnetic beads can be manipulated via an external magnetic field...... and be employed for sample preparation in a lab-on-a-chip device. The PHEB sensors are formed by four magnetoresistive arms in a Wheatstone bridge geometry. In this thesis two different sensor geometries are used. In the first geometry (PHEB), the magnetic bead signals from the sensor arms are additive...

  6. Anisotropic magnetorestistance and magnetic anisotropy of Heusler compound thin films

    Energy Technology Data Exchange (ETDEWEB)

    Althammer, Matthias; Krupp, Alexander T.; Czeschka, Franz D.; Opel, Matthias; Gross, Rudolf; Goennenwein, Sebastian T.B. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Garching (Germany); Imort, Inga-Mareen; Reiss, Guenter; Thomas, Andy [Fakultaet fuer Physik, Universitaet Bielefeld, Bielefeld (Germany)

    2011-07-01

    Magnetic anisotropy is of fundamental importance in ferromagnets, as it strongly influences their properties. Using anisotropic magnetoresistance (AMR) measurements, we investigate the magnetic anisotropy of the ferromagnetic Heusler compound Co{sub 2}FeAl. Thin Co{sub 2}FeAl films grown on (001)-oriented MgO substrate were patterned into Hall-bar mesa structures via optical lithography and etching. To quantify the magnetic anisotropy, we recorded the angle dependent magnetoresistance (ADMR), i.e., the AMR as a function of magnetic field orientation for different magnetic field magnitudes H. From the ADMR data taken at high vertical stroke H vertical stroke, the resistivity coefficients are obtained. The magnetic anisotropy is then extracted from ADMR taken at lower vertical stroke H vertical stroke. We will quantitatively compare the resistivity coefficients and the magnetic anisotropy in Co{sub 2}FeAl thin films with thicknesses of 20 nm, 50 nm, 80 nm, 100 nm, as a function of temperature from 5 K to 350 K.

  7. Non-local magnetoresistance in YIG/Pt nanostructures

    International Nuclear Information System (INIS)

    We study the local and non-local magnetoresistance of thin Pt strips deposited onto yttrium iron garnet. The local magnetoresistive response, inferred from the voltage drop measured along one given Pt strip upon current-biasing it, shows the characteristic magnetization orientation dependence of the spin Hall magnetoresistance. We simultaneously also record the non-local voltage appearing along a second, electrically isolated, Pt strip, separated from the current carrying one by a gap of a few 100 nm. The corresponding non-local magnetoresistance exhibits the symmetry expected for a magnon spin accumulation-driven process, confirming the results recently put forward by Cornelissen et al. [“Long-distance transport of magnon spin information in a magnetic insulator at room temperature,” Nat. Phys. (published online 14 September 2015)]. Our magnetotransport data, taken at a series of different temperatures as a function of magnetic field orientation, rotating the externally applied field in three mutually orthogonal planes, show that the mechanisms behind the spin Hall and the non-local magnetoresistance are qualitatively different. In particular, the non-local magnetoresistance vanishes at liquid Helium temperatures, while the spin Hall magnetoresistance prevails

  8. Fabrication and characterization of magnetotransport in colossal magnetoresistive manganite thin films and hybrid structures

    Science.gov (United States)

    Pietambaram, Srinivas V.

    The continually increasing demand for magnetic information storage and retrieval has driven a significant worldwide effort to improve the performance of relevant hard ware components. As the areal density continues to increase, more sensitive materials and innovative structures will be required to detect the decreasing fringe fields emanating from the media. Doped manganites in thin film form are being examined as a possible next generation magnetoresistance sensor material. The magnetoresistance of these doped manganite thin films is of unprecedented magnitude; however, these large resistance changes are achieved only in a strong field in the Tesla range, thus severely limiting their practical utility. This dissertation addresses some of the critical parameters, which influence the properties and efforts to reduce the field scale necessary to observe high magnetoresistance ratios in these films. The primary deposition technique used in this work is pulsed laser deposition. Initial work was concentrated on the optimization of various process parameters to obtain high quality thin films of manganites. Systematic post deposition heat treatments in oxygen and argon ambient at elevated temperatures revealed that transition temperature is related to the Mn-O fraction and uniform distribution of oxygen across the films rather than just the oxygen content of the films as proposed by others. MR ratio is improved by the improvement in the microstructure (recrystallization and grain growth) of the films after annealing; however vacancies created on the lanthanum site by the high temperature anneal also seem to be an important factor in the determination of the MR ratio. Self-doped, mixed doped and external doped lanthanum manganite thin films, where the external dopant is Ca, have shown different transition temperature and MR ratios. The variation in the insulator-to-metal transition could be explained on the basis of Mn4+ content while the MR property seemed to be related

  9. Large Magnetoresistance Based on Double Spin Filter Tunnel Barriers

    Institute of Scientific and Technical Information of China (English)

    TANG Xiao-Li; ZHANG Huai-Wu; SU Hua; JING Yu-Lan

    2008-01-01

    We propose and theoretically analyse a double magnetic tunnel device that takes advantages of the spin filter effect. Two magnetic tunnel barriers are formed by different spin filters which have different barrier heights. The magnetoresistance of the device is low (high) when the magnetic moments of the two spin filters are parallel(antiparallel). We present a theoretical calculation of the magnetoresistance based on electric tunnel effect.In addition, the effect of the difference barrier heights and exchange splitting energies between the two spin filters are also analysed in detail. The numerical results show that the spin filter in this configuration gives a magnetoresistance larger than that with standard magnetic tunnel junctions.

  10. Magneto-resistance in three-dimensional composites.

    OpenAIRE

    Briane, Marc; Pater, Laurent

    2014-01-01

    In this paper we study the magneto-resistance, i.e. the second-order term of the resistivity perturbed by a low magnetic field, of a three-dimensional composite material. Extending the two-dimensional periodic framework of [M. Briane, Homogenization of the magneto-resistance in dimension two, M3AS, 20 (7) (2010), 1161-1177], it is proved through a H-convergence approach that the dissipation energy induced by the effective magneto-resistance is greater or equal to the average of the dissipatio...

  11. Magnetoresistance due to domain walls in semiconducting magnetic nano structures

    International Nuclear Information System (INIS)

    Magnetoresistance of a semiconducting ferromagnetic nano structure with a laterally constrained domain wall is analyzed theoretically in the limit of sharp domain walls and fully polarized electron gas is considered. The spin-orbit interaction of Rash ba type is included into considerations. It is shown that the magnetoresistance in such a case can be relatively large, which is in a qualitative agreement with recent experimental observations. It is also shown that spin-orbit interaction can enhance the magnetoresistance. The role of localization corrections is also briefly discussed

  12. Magnetoresistance due to domain walls in semiconducting magnetic nano structures

    Energy Technology Data Exchange (ETDEWEB)

    Dugaev, V.K. [Max-Planck-Institut fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle (Germany) and Institute for Problems of Materials Science, Vilde 5, 58001 Chernovtsy (Ukraine)]. E-mail: vdugaev@mpi-halle.de; Berakdar, J. [Max-Planck-Institut fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle (Germany); Barnas, J. [Department of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznan, and Institute of Molecular Physics PAN, ul. M. Smoluchowskiego 17, 60-179 Poznan (Poland); Dobrowolski, W. [Institute of Physics PAN, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Mitin, V.F. [Institute of Semiconductor Physics, NANU, pr. Nauki, 03108 Kiev (Ukraine); Vieira, M. [ISEL-DEETC, Rua Cons. Emidio Navarro, 1950-062 Lisbon (Portugal)

    2005-12-15

    Magnetoresistance of a semiconducting ferromagnetic nano structure with a laterally constrained domain wall is analyzed theoretically in the limit of sharp domain walls and fully polarized electron gas is considered. The spin-orbit interaction of Rash ba type is included into considerations. It is shown that the magnetoresistance in such a case can be relatively large, which is in a qualitative agreement with recent experimental observations. It is also shown that spin-orbit interaction can enhance the magnetoresistance. The role of localization corrections is also briefly discussed.

  13. Fractures in anisotropic media

    Science.gov (United States)

    Shao, Siyi

    Rocks may be composed of layers and contain fracture sets that cause the hydraulic, mechanical and seismic properties of a rock to be anisotropic. Coexisting fractures and layers in rock give rise to competing mechanisms of anisotropy. For example: (1) at low fracture stiffness, apparent shear-wave anisotropy induced by matrix layering can be masked or enhanced by the presence of a fracture, depending on the fracture orientation with respect to layering, and (2) compressional-wave guided modes generated by parallel fractures can also mask the presence of matrix layerings for particular fracture orientations and fracture specific stiffness. This report focuses on two anisotropic sources that are widely encountered in rock engineering: fractures (mechanical discontinuity) and matrix layering (impedance discontinuity), by investigating: (1) matrix property characterization, i.e., to determine elastic constants in anisotropic solids, (2) interface wave behavior in single-fractured anisotropic media, (3) compressional wave guided modes in parallel-fractured anisotropic media (single fracture orientation) and (4) the elastic response of orthogonal fracture networks. Elastic constants of a medium are required to understand and quantify wave propagation in anisotropic media but are affected by fractures and matrix properties. Experimental observations and analytical analysis demonstrate that behaviors of both fracture interface waves and compressional-wave guided modes for fractures in anisotropic media, are affected by fracture specific stiffness (controlled by external stresses), signal frequency and relative orientation between layerings in the matrix and fractures. A fractured layered medium exhibits: (1) fracture-dominated anisotropy when the fractures are weakly coupled; (2) isotropic behavior when fractures delay waves that are usually fast in a layered medium; and (3) matrix-dominated anisotropy when the fractures are closed and no longer delay the signal. The

  14. Anisotropic progressive photon mapping

    Science.gov (United States)

    Liu, XiaoDan; Zheng, ChangWen

    2014-01-01

    Progressive photon mapping solves the memory limitation problem of traditional photon mapping. It gives the correct radiance with a large passes, but it converges slowly. We propose an anisotropic progressive photon mapping method to generate high quality images with a few passes. During the rendering process, different from standard progressive photon mapping, we store the photons on the surfaces. At the end of each pass, an anisotropic method is employed to compute the radiance of each eye ray based on the stored photons. Before move to a new pass, the photons in the scene are cleared. The experiments show that our method generates better results than the standard progressive photon mapping in both numerical and visual qualities.

  15. Extremely Anisotropic Scintillations

    CERN Document Server

    Walker, Mark; Bignall, Hayley

    2008-01-01

    A small number of quasars exhibit interstellar scintillation on time-scales less than an hour; their scintillation patterns are all known to be anisotropic. Here we consider a totally anisotropic model in which the scintillation pattern is effectively one-dimensional. For the persistent rapid scintillators J1819+3845 and PKS1257-326 we show that this model offers a good description of the two-station time-delay measurements and the annual cycle in the scintillation time-scale. Generalising the model to finite anisotropy yields a better match to the data but the improvement is not significant and the two additional parameters which are required to describe this model are not justified by the existing data. The extreme anisotropy we infer for the scintillation patterns must be attributed to the scattering medium rather than a highly elongated source. For J1819+3845 the totally anisotropic model predicts that the particular radio flux variations seen between mid July and late August should repeat between late Au...

  16. Experimental and theoretical investigation of the precise transduction mechanism in giant magnetoresistive biosensors

    Science.gov (United States)

    Lee, Jung-Rok; Sato, Noriyuki; Bechstein, Daniel J. B.; Osterfeld, Sebastian J.; Wang, Junyi; Gani, Adi Wijaya; Hall, Drew A.; Wang, Shan X.

    2016-01-01

    Giant magnetoresistive (GMR) biosensors consisting of many rectangular stripes are being developed for high sensitivity medical diagnostics of diseases at early stages, but many aspects of the sensing mechanism remain to be clarified. Using e-beam patterned masks on the sensors, we showed that the magnetic nanoparticles with a diameter of 50 nm located between the stripes predominantly determine the sensor signals over those located on the sensor stripes. Based on computational analysis, it was confirmed that the particles in the trench, particularly those near the edges of the stripes, mainly affect the sensor signals due to additional field from the stripe under an applied field. We also demonstrated that the direction of the average magnetic field from the particles that contributes to the signal is indeed the same as that of the applied field, indicating that the particles in the trench are pivotal to produce sensor signal. Importantly, the same detection principle was validated with a duplex protein assay. Also, 8 different types of sensor stripes were fabricated and design parameters were explored. According to the detection principle uncovered, GMR biosensors can be further optimized to improve their sensitivity, which is highly desirable for early diagnosis of diseases.

  17. Magnetoresistance and ion bombardment induced magnetic patterning

    International Nuclear Information System (INIS)

    In this thesis the combination of the magnetic patterning of the unidirectional anisotropy and the tunnel magnetoresistance effect is investigated. In my diploma thesis, it has been shown that it is in principle possible to use the magnetic patterning by ion bombardment to magnetically structure the pinned layer in magnetic tunnel junctions (MTJs) with alumina barrier. Furthermore, it has been shown that the side effects which have been observed after this treatment can be at least reduced by an additional heating step. Starting from this point, the applicability of ion bombardment induced magnetic patterning (IBMP) in general and the combination of IBMP and MTJs in particular is investigated and new applications are developed. (orig.)

  18. Magnetoresistance and localization in bosonic insulators

    Science.gov (United States)

    Müller, Markus

    2013-06-01

    We study the strong localization of hard-core bosons. Using a locator expansion we find that in the insulator, unlike for typical fermion problems, nearly all low-energy scattering paths come with positive amplitudes and hence interfere constructively. As a consequence, the localization length of bosonic excitations shrinks when the constructive interference is suppressed by a magnetic field, entailing an exponentially large positive magnetoresistance, opposite to and significantly stronger than the analogous effect in fermions. Within the forward-scattering approximation, we find that the lowest-energy excitations are the most delocalized. A similar analysis applied to random field Ising models suggests that the ordering transition is due to a delocalization initiated at zero energy rather than due to the closure of a mobility gap in the paramagnet.

  19. Anomalous magnetoresistance in magnetized topological insulator cylinders

    Energy Technology Data Exchange (ETDEWEB)

    Siu, Zhuo Bin, E-mail: a0018876@nus.edu.sg [NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore 117456 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, Singapore 117608 (Singapore); Jalil, Mansoor B. A. [NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore 117456 (Singapore)

    2015-05-07

    The close coupling between the spin and momentum degrees of freedom in topological insulators (TIs) presents the opportunity for the control of one to manipulate the other. The momentum can, for example, be confined on a curved surface and the spin influenced by applying a magnetic field. In this work, we study the surface states of a cylindrical TI magnetized in the x direction perpendicular to the cylindrical axis lying along the z direction. We show that a large magnetization leads to an upwards bending of the energy bands at small |k{sub z}|. The bending leads to an anomalous magnetoresistance where the transmission between two cylinders magnetized in opposite directions is higher than when the cylinders are magnetized at intermediate angles with respect to each other.

  20. Magnetoresistive properties of nanostructured magnetic metals, manganites, and magnetic semiconductors

    Science.gov (United States)

    Solin, N. I.; Romashev, L. N.; Naumov, S. V.; Saranin, A. A.; Zotov, A. V.; Olyanich, D. A.; Kotlyar, V. G.; Utas, O. A.

    2016-02-01

    We consider methods for controlling magnetoresistive parameters of magnetic metal superlattices, manganites, and magnetic semiconductors. By reducing the thickness of ferromagnetic layers in superlattices (e.g., Fe layers in Fe/Cr superlattices), it is possible to form superparamagnetic clustered-layered nanostructures with a magnetoresistance weakly depending on the direction of the external magnetic field, which is very important for applications of such type of materials. Producing Mn vacancies and additionally annealing lanthanum manganites in the oxygen atmosphere, it is possible to increase their magnetoresistance by more than four orders of magnitude. By changing the thickness of p- n junction in the structure of ferromagnetic semiconductors, their magnetoresistance can be increased by 2-3 orders of magnitude.

  1. Facilities of management magnetoresistive transformer of active power

    Directory of Open Access Journals (Sweden)

    Val. S. Vuntesmeri

    2009-03-01

    Full Text Available Management facilities are considered, spectral composition is certain and the form of коммутируемого signal of magnetoresistive transformer of active power is rotined.

  2. The suppression of the large magnetoresistance in thin WTe2

    Science.gov (United States)

    Shen, Jie; Woods, John; Cha, Judy

    The layered nature of WTe2 suggests the possibility of making a single layer WTe2 memory device that exploits the recently observed large magnetoresistance. Presently, the origin of the magnetoresistance is attributed to the charge balance between the electron and hole carriers, yet the exact underlying physical mechanism is unclear. Here we show a systematic suppression of the large magnetoresistance, as well as turn-on temperature, with decreasing thickness of WTe2. We attribute the thickness-dependent transport properties to undesirable parasitic effects that become dominant in thin films of WTe2. Our results highlight the increasing importance of characterizing the parasitic effects for 2D layered materials in a single- to a few-layer thick limit. Finally, our observations support the hypothesis that the origin of the large magnetoresistance may be due to the charge balance between the electron and the hole carriers.

  3. Magnetoresistance in Fe/ZnSe/Fe planar junctions

    International Nuclear Information System (INIS)

    We report on the magnetoresistance measurements in Fe/ZnSe/Fe planar junctions. Fe/ZnSe/Fe structures were successfully grown by molecular beam epitaxy and subsequently patterned using optical lithography. At low temperature, the tunneling of electrons from one Fe layer to the other through ZnSe gives arise a small tunneling magnetoresistance (100%) with an almost quadratic field dependence was observed for field as high as 80 kOe

  4. Chiral anomaly and classical negative magnetoresistance of Weyl metals

    Science.gov (United States)

    Son, D. T.; Spivak, B. Z.

    2013-09-01

    We consider the classical magnetoresistance of a Weyl metal in which the electron Fermi surface possesses nonzero fluxes of the Berry curvature. Such a system may exhibit large negative magnetoresistance with unusual anisotropy as a function of the angle between the electric and magnetic fields. In this case the system can support an additional type of plasma wave. These phenomena are consequences of the chiral anomaly in electron transport theory.

  5. Quantum conductance in electrodeposited nanocontacts and magnetoresistance measurements

    DEFF Research Database (Denmark)

    Elhoussine, F.; Encinas, A.; Mátéfi-Tempfli, Stefan;

    2003-01-01

    The conductance and magnetoresistance measurements in magnetic Ni-Ni and Co-Ni nanocontacts prepared by electrodeposition within the pores of a track of track-etched polymer membrane were discussed. At room temperature, Ni-Ni constrictions were found to show broad quantization plateaus of conduct...... conductance during their dissolution in units of e/h, as expected for ferromagnetic ballistic nanocontacts. The measurement of the positive and negative magnetoresistance in Co-Ni nanocontacts was also elaborated....

  6. Model anisotropic quantum Hall states

    OpenAIRE

    Qiu, R. -Z.; Haldane, F.D.M.; Wan, Xin; Yang, Kun; Yi, Su

    2012-01-01

    Model quantum Hall states including Laughlin, Moore-Read and Read-Rezayi states are generalized into appropriate anisotropic form. The generalized states are exact zero-energy eigenstates of corresponding anisotropic two- or multi-body Hamiltonians, and explicitly illustrate the existence of geometric degrees of in the fractional quantum Hall effect. These generalized model quantum Hall states can provide a good description of the quantum Hall system with anisotropic interactions. Some numeri...

  7. On the Relativistic anisotropic configurations

    CERN Document Server

    Shojai, F; Stepanian, A

    2016-01-01

    In this paper we study anisotropic spherical polytropes within the framework of general relativity. Using the anisotropic Tolman-Oppenheimer-Volkov (TOV) equations, we explore the relativistic anisotropic Lane-Emden equations. We find how the anisotropic pressure affects the boundary conditions of these equations. Also we argue that the behaviour of physical quantities near the center of star changes in the presence of anisotropy. For constant density, a class of exact solution is derived with the aid of a new ansatz and its physical properties are discussed.

  8. Magnetostrictive GMR sensor on flexible polyimide substrates

    International Nuclear Information System (INIS)

    The feasibility of a stress sensor based on giant magneto-resistance (GMR) on a flexible polyimide substrate is presented. Therefore, a stack system with a GMR effect of up to 8.6% has been deposited on a polyimide substrate and patterned to micrometer scaled sensor elements. An in-plane tensile stress was applied to the sensor to achieve a rotation of the anisotropy of the magnetostrictive free layer. The magneto-optical and magneto-resistive effect was measured. The stress dependence of the Co50Fe50 free-layer magnetization was measured up to an elongation of 2.5% in a CoFe/Cu/CoFe spin valve. The magneto-optical results are compared to the resistance loops of the sample. Furthermore, the normalized sensor output is shown as a function of the applied stress at several bias fields and at the remanent state

  9. Relaxation of Anisotropic Glasses

    DEFF Research Database (Denmark)

    Deubener, Joachim; Martin, Birgit; Wondraczek, Lothar; Yue, Yuanzheng

    2004-01-01

    Anisotropic glasses are obtained from uniaxial compressing and pulling of glass forming liquids above the transition temperature range. To freeze-in, at least partly the structural state of the flowing melt, cylindrical samples were subjected to a controlled cooling process under constant load...... differential scanning calorimetry (DSC) and dilatometry. The energy release and expansion-shrinkage behaviour of the glasses are investigated as a function of the applied deformation stress. Structural origins of the frozen-in birefringence induced by viscous flow are discussed and correlation between the...

  10. Anisotropically Inflating Universes

    CERN Document Server

    Barrow, J D; Barrow, John D.; Hervik, Sigbjorn

    2008-01-01

    We show that in theories of gravity that add quadratic curvature invariants to the Einstein-Hilbert action there exist expanding vacuum cosmologies with positive cosmological constant which do not approach the de Sitter universe. Exact solutions are found which inflate anisotropically. This behaviour is driven by the Ricci curvature invariant and has no counterpart in the general relativistic limit. These examples show that the cosmic no-hair theorem does not hold in these higher-order extensions of general relativity and raises new questions about the ubiquity of inflation in the very early universe and the thermodynamics of gravitational fields.

  11. Anisotropic Stars Exact Solutions

    CERN Document Server

    Dev, K; Dev, Krsna; Gleiser, Marcelo

    2000-01-01

    We study the effects of anisotropic pressure on the properties of spherically symmetric, gravitationally bound objects. We consider the full general relativistic treatment of this problem and obtain exact solutions for various form of equations of state connecting the radial and tangential pressures. It is shown that pressure anisotropy can have significant effects on the structure and properties of stellar objects. In particular, the maximum value of 2M/R can approach unity (2M/R < 8/9 for isotropic objects) and the surface redshift can be arbitrarily large.

  12. Optics of anisotropic nanostructures

    Science.gov (United States)

    Rokushima, Katsu; Antoš, Roman; Mistrík, Jan; Višňovský, Štefan; Yamaguchi, Tomuo

    2006-07-01

    The analytical formalism of Rokushima and Yamakita [J. Opt. Soc. Am. 73, 901-908 (1983)] treating the Fraunhofer diffraction in planar multilayered anisotropic gratings proved to be a useful introduction to new fundamental and practical situations encountered in laterally structured periodic (both isotropic and anisotropic) multilayer media. These are employed in the spectroscopic ellipsometry for modeling surface roughness and in-depth profiles, as well as in the design of various frequency-selective elements including photonic crystals. The subject forms the basis for the solution of inverse problems in scatterometry of periodic nanostructures including magnetic and magneto-optic recording media. It has no principal limitations as for the frequencies and period to radiation wavelength ratios and may include matter wave diffraction. The aim of the paper is to make this formalism easily accessible to a broader community of students and non-specialists. Many aspects of traditional electromagnetic optics are covered as special cases from a modern and more general point of view, e.g., plane wave propagation in isotropic media, reflection and refraction at interfaces, Fabry-Perot resonator, optics of thin films and multilayers, slab dielectric waveguides, crystal optics, acousto-, electro-, and magneto-optics, diffraction gratings, etc. The formalism is illustrated on a model simulating the diffraction on a ferromagnetic wire grating.

  13. Anisotropic spheres in general relativity

    International Nuclear Information System (INIS)

    A prescription originally conceived for perfect fluids is extended to the case of anisotropic pressures. The method is used to obtain exact analytical solutions of the Einstein equations for spherically symmetric selfgravitating distribution of anisotropic matter. The solutions are matched to the Schwarzschild exterior metric. (author). 15 refs

  14. Tunneling magnetoresistance tuned by a vertical electric field in an AA-stacked graphene bilayer with double magnetic barriers

    International Nuclear Information System (INIS)

    We investigate the effect of a vertical electric field on the electron tunneling and magnetoresistance in an AA-stacked graphene bilayer modulated by the double magnetic barriers with parallel or antiparallel configuration. The results show that the electronic transmission properties in the system are sensitive to the magnetic-barrier configuration and the bias voltage between the graphene layers. In particular, it is found that for the antiparallel configuration, within the low energy region, the blocking effect is more obvious compared with the case for the parallel configuration, and even there may exist a transmission spectrum gap which can be arbitrarily tuned by the field-induced interlayer bias voltage. We also demonstrate that the significant discrepancy between the conductance for both parallel and antiparallel configurations would result in a giant tunneling magnetoresistance ratio, and further the maximal magnetoresistance ratio can be strongly modified by the interlayer bias voltage. This leads to the possible realization of high-quality magnetic sensors controlled by a vertical electric field in the AA-stacked graphene bilayer

  15. Transport properties of colossal magnetoresistive materials

    CERN Document Server

    Yates, K A

    2002-01-01

    A microwave technique was developed in order to test the validity of the hypothesis that the microwave transport of polycrystalline, optimally doped, colossal magnetoresistive materials was dominated by intragranular material. The microwave surface resistance at 9GHz was compared with dc resistivity and magnetisation to study the influence of yttrium doping on the grain boundary regions of bulk polycrystalline samples of La sub 0 sub . sub 7 sub - sub x Y sub x Ca sub 0 sub . sub 3 MnO sub 3. It was found that, within the grains, the addition of yttrium causes the activation energy above T sub p to increase. A phenomenological model was introduced to explain the data in terms of the difference in structure between the grain and grain boundary regions. The technique was also used to study the influence of deoxygenation on the grain boundary regions of bulk, polycrystalline, La sub 0 sub . sub 6 sub 7 Ca sub 0 sub . sub 3 sub 3 MnO sub 3. For samples interconnected porosity, low temperature (600 deg C), short a...

  16. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    Energy Technology Data Exchange (ETDEWEB)

    Hashimoto, T.; Kamikawa, S.; Haruyama, J., E-mail: J-haru@ee.aoyama.ac.jp [Faculty of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Soriano, D. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Pedersen, J. G. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Department of Micro-and Nanotechnology, DTU Nanotech, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Roche, S. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); ICREA - Institucio Catalana de Recerca i Estudis Avancats, 08010 Barcelona (Spain)

    2014-11-03

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO{sub 2}/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO{sub 2}/FGNPA junction also drastically enhances TMR ratios up to ∼100%.

  17. Nodal Quasiparticle in Pseudogapped Colossal Magnetoresistive Manganites

    Energy Technology Data Exchange (ETDEWEB)

    Mannella, N.

    2010-06-02

    A characteristic feature of the copper oxide high-temperature superconductors is the dichotomy between the electronic excitations along the nodal (diagonal) and antinodal (parallel to the Cu-O bonds) directions in momentum space, generally assumed to be linked to the d-wave symmetry of the superconducting state. Angle-resolved photoemission measurements in the superconducting state have revealed a quasiparticle spectrum with a d-wave gap structure that exhibits a maximum along the antinodal direction and vanishes along the nodal direction. Subsequent measurements have shown that, at low doping levels, this gap structure persists even in the high-temperature metallic state, although the nodal points of the superconducting state spread out in finite Fermi arcs. This is the so-called pseudogap phase, and it has been assumed that it is closely linked to the superconducting state, either by assigning it to fluctuating superconductivity or by invoking orders which are natural competitors of d-wave superconductors. Here we report experimental evidence that a very similar pseudogap state with a nodal-antinodal dichotomous character exists in a system that is markedly different from a superconductor: the ferromagnetic metallic groundstate of the colossal magnetoresistive bilayer manganite La{sub 1.2}Sr{sub 1.8}Mn{sub 2}O{sub 7}. Our findings therefore cast doubt on the assumption that the pseudogap state in the copper oxides and the nodal-antinodal dichotomy are hallmarks of the superconductivity state.

  18. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    International Nuclear Information System (INIS)

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO2/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO2/FGNPA junction also drastically enhances TMR ratios up to ∼100%

  19. Effect of NiO inserted layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures

    Science.gov (United States)

    Shang, T.; Zhan, Q. F.; Yang, H. L.; Zuo, Z. H.; Xie, Y. L.; Liu, L. P.; Zhang, S. L.; Zhang, Y.; Li, H. H.; Wang, B. M.; Wu, Y. H.; Zhang, S.; Li, Run-Wei

    2016-07-01

    We investigate spin-current transport with an antiferromagnetic insulator NiO thin layer by means of the spin-Hall magnetoresistance (SMR) over a wide range of temperature in Pt/NiO/Y3Fe5O12 (Pt/NiO/YIG) heterostructures. The SMR signal is comparable to that without the NiO layer as long as the temperature is near or above the blocking temperature of the NiO, indicating that the magnetic fluctuation of the insulating NiO is essential for transmitting the spin current from the Pt to YIG layer. On the other hand, the SMR signal becomes negligibly small at low temperature, and both conventional anisotropic magnetoresistance and the anomalous Hall resistance are extremely small at any temperature, implying that the insertion of the NiO has completely suppressed the Pt magnetization induced by the YIG magnetic proximity effect (MPE). The dual roles of the thin NiO layer are, to suppress the magnetic interaction or MPE between Pt and YIG, and to maintain efficient spin current transmission at high temperature.

  20. Averaging anisotropic cosmologies

    CERN Document Server

    Barrow, J D; Barrow, John D.; Tsagas, Christos G.

    2006-01-01

    We examine the effects of spatial inhomogeneities on irrotational anisotropic cosmologies by looking at the average properties of pressure-free Bianchi-type models. Adopting the Buchert averaging scheme, we identify the kinematic backreaction effects by focussing on spacetimes with zero or isotropic spatial curvature. This allows us to close the system of the standard scalar formulae with a propagation equation for the shear magnitude. We find no change in the already known conditions for accelerated expansion. The backreaction terms are expressed as algebraic relations between the mean-square fluctuations of the models' irreducible kinematical variables. Based on these we investigate the early evolution of averaged vacuum Bianchi type $I$ universes and those filled with pressureless matter. In the latter case we show that the backreaction effects can modify the familiar Kasner-like singularity and potentially remove Mixmaster-type oscillations. We also discuss the possibility of accelerated expansion due to ...

  1. Thermodynamics of anisotropic branes

    CERN Document Server

    Ávila, Daniel; Patiño, Leonardo; Trancanelli, Diego

    2016-01-01

    We study the thermodynamics of flavor D7-branes embedded in an anisotropic black brane solution of type IIB supergravity. The flavor branes undergo a phase transition between a `Minkowski embedding', in which they lie outside of the horizon, and a `black hole embedding', in which they fall into the horizon. This transition depends on two independent dimensionless ratios, which are formed out of the black hole temperature, its anisotropy parameter, and the mass of the flavor degrees of freedom. It happens either at a critical temperature or at a critical anisotropy. A general lesson we learn from this analysis is that the anisotropy, in this particular realization, induces similar effects as the temperature. In particular, increasing the anisotropy bends the branes more and more into the horizon. Moreover, we observe that the transition becomes smoother for higher anisotropies.

  2. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers

    Science.gov (United States)

    Stamopoulos, D.; Aristomenopoulou, E.

    2015-08-01

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent ‘on’ and ‘off’, thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis.

  3. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers.

    Science.gov (United States)

    Stamopoulos, D; Aristomenopoulou, E

    2015-01-01

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent 'on' and 'off', thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis. PMID:26306543

  4. Anomalous organic magnetoresistance from competing carrier-spin-dependent interactions with localized electronic and nuclear spins

    OpenAIRE

    Wang, Y.; Harmon, N. J.; Sahin-Tiras, K.; Wohlgenannt, M.; Flatté, M. E.

    2014-01-01

    We describe a new regime for low-field magnetoresistance in organic semiconductors, in which the spin-relaxing effects of localized nuclear spins and electronic spins interfere. The regime is studied by the controlled addition of localized electronic spins to a material that exhibits substantial room-temperature magnetoresistance ($\\sim 20$\\%). Although initially the magnetoresistance is suppressed by the doping, at intermediate doping there is a regime where the magnetoresistance is insensit...

  5. Anisotropic Inflation with General Potentials

    CERN Document Server

    Shi, Jiaming; Qiu, Taotao

    2015-01-01

    Anomalies in recent observational data indicate that there might be some "anisotropic hair" generated in an inflation period. To obtain general information about the effects of this anisotropic hair to inflation models, we studied anisotropic inflation models that involve one vector and one scalar using several types of potentials. We determined the general relationship between the degree of anisotropy and the fraction of the vector and scalar fields, and concluded that the anisotropies behave independently of the potentials. We also generalized our study to the case of multi-directional anisotropies.

  6. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  7. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    International Nuclear Information System (INIS)

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications

  8. Low temperature magnetoresistance measurements on bismuth nanowire arrays

    International Nuclear Information System (INIS)

    We present low temperature resistance R(T) and magnetoresistance measurements for Bi nanowires with diameters between 100 and 500 nm, which are close to being single-crystalline. The nanowires were fabricated by electrochemical deposition in pores of polycarbonate membranes. R(T) varies as T2 in the low temperature range 1.5 K1.5 variation. Its size depends strongly on the diameter of the wires but only weakly on temperature. Finally, a steplike increase in the magnetoresistance of our sample with a wire diameter of 100 nm was found and this might be attributed to a transition from one-dimensional to three-dimensional localization.

  9. Colossal magnetoresistance, charge ordering and related properties of manganese oxides

    CERN Document Server

    Rao, C N R

    1998-01-01

    Metal oxides constitute one of the most amazing classes of materials with a wide range of properties. They exhibit a variety of phenomena, such as ferroelectricity, ferromagnetism and superconductivity.A new aspect of metal oxides - colossal magnetoresistance exhibited by certain manganese oxides, in particular rare earth manganates of perovskite structure - has received much attention in the last four years. Some of these oxides show 100% magnetoresistance and have much potential for technological applications. Previously this phenomenon was found only in layered and granular metallic materia

  10. Magnetoresistance of Mn-decorated topological line defects in graphene

    KAUST Repository

    Obodo, Tobechukwu Joshua

    2015-01-13

    We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green\\'s function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.

  11. Negative and nonlinear magnetoresistance effect in silicon strip

    CERN Document Server

    Wang, Fangcong; Guo, Hui; Fan, Xiaolong; Li, Zhankui

    2016-01-01

    Both negative magnetoresistance and nonlinear magnetoresisitance were observed in silicon strip nuclear radiation detector in room temperature if we applied high magnetic field intensity in different direction. This result is different with former report. We believe this is the result of coaction of high electric field (Gunn effect) and high magnetic field, or because of the variation of number of carriers and the carriers mobility. The weak localization and Landau energy levels also affect the magnetoresistance. Different crystal orientations have different energy band structures. Complex band structures lead complex carriers mobility plus Landau energy levels. So the magnetoresisitance effect is anisotropy.

  12. Gradient expansion for anisotropic hydrodynamics

    CERN Document Server

    Florkowski, Wojciech; Spaliński, Michał

    2016-01-01

    We compute the gradient expansion for anisotropic hydrodynamics. The results are compared with the corresponding expansion of the underlying kinetic-theory model with the collision term treated in the relaxation time approximation. We find that a recent formulation of anisotropic hydrodynamics based on an anisotropic matching principle yields the first three terms of the gradient expansion in agreement with those obtained for the kinetic theory. This gives further support for this particular hydrodynamic model as a good approximation of the kinetic-theory approach. We further find that the gradient expansion of anisotropic hydrodynamics is an asymptotic series, and the singularities of the analytic continuation of its Borel transform indicate the presence of non-hydrodynamic modes.

  13. Photon states in anisotropic media

    Indian Academy of Sciences (India)

    Deepak Kumar

    2002-08-01

    Quantum aspects of optical polarization are discussed for waves traveling in anisotropic dielectric media with a view to relate the dynamics of polarization with that of photon spin and its manipulation by classical polarizers.

  14. Application of Anisotropic Texture Components

    OpenAIRE

    Eschner, Th.; Fundenberger, J.-J.

    1997-01-01

    The description of textures in terms of texture components is an established conception in quantitative texture analysis. Recent developments lead to the representation of orientation distribution functions as a weighted sum of model functions, each corresponding to one anisotropic texture component. As was shown previously, an adequate texture description is possible with only a very small number of anisotropic texture components. As a result, textures and texture changes can be described by...

  15. Hybrid magnetoresistance in Pt-based multilayers: Effect originated from strong interfacial spin-orbit coupling

    Science.gov (United States)

    Meng, Kangkang; Xiao, Jiaxing; Wu, Yong; Miao, Jun; Xu, Xiaoguang; Zhao, Jianhua; Jiang, Yong

    2016-01-01

    The hybrid magnetoresistance (MR) behaviors in Pt/Co90Fe10/Pt, Mn1.5Ga/Pt and Mn1.5Ga/Pt/Co90Fe10/Pt multilayers have been investigated. Both planer Hall effect (PHE) and angle-dependent MR in Pt/Co90Fe10/Pt revealed the combination of spin Hall MR (SMR) and normal anisotropic MR (AMR), indicating the large contribution of strong spin-orbit coupling (SOC) at the interfaces. When Pt contacted with perpendicular magnetic anisotropy (PMA) metal Mn1.5Ga, the strong interfacial SOC modified the effective anomalous Hall effect. The MR in Mn1.5Ga/Pt/Co90Fe10/Pt is not a simple combination of SMR and AMR, but ascribed to the complicated domain wall scattering and strong interfacial SOC when Pt is sandwiched by the in-plane magnetized Co90Fe10 and the PMA Mn1.5Ga. PMID:26843035

  16. Effect of thermal deformation on giant magnetoresistance of flexible spin valves grown on polyvinylidene fluoride membranes

    Science.gov (United States)

    Luping, Liu; Qingfeng, Zhan; Xin, Rong; Huali, Yang; Yali, Xie; Xiaohua, Tan; Run-wei, Li

    2016-07-01

    We fabricated flexible spin valves on polyvinylidene fluoride (PVDF) membranes and investigated the influence of thermal deformation of substrates on the giant magnetoresistance (GMR) behaviors. The large magnetostrictive Fe81Ga19 (FeGa) alloy and the low magnetostrictive Fe19Ni81 (FeNi) alloy were selected as the free and pinned ferromagnetic layers. In addition, the exchange bias (EB) of the pinned layer was set along the different thermal deformation axes α 31 or α 32 of PVDF. The GMR ratio of the reference spin valves grown on Si intrinsically increases with lowering temperature due to an enhancement of spontaneous magnetization. For flexible spin valves, when decreasing temperature, the anisotropic thermal deformation of PVDF produces a uniaxial anisotropy along the α 32 direction, which changes the distribution of magnetic domains. As a result, the GMR ratio at low temperature for spin valves with EB∥ α 32 becomes close to that on Si, but for spin valves with EB∥ α 31 is far away from that on Si. This thermal effect on GMR behaviors is more significant when using magnetostrictive FeGa as the free layer. Project supported by the National Natural Science Foundation of China (Grant Nos. 11374312, 51401230, 51522105, and 51471101) and the Ningbo Science and Technology Innovation Team, China (Grant No. 2015B11001).

  17. Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystals.

    Science.gov (United States)

    Li, Haifeng; Xiao, Yinguo; Schmitz, Berthold; Persson, Jörg; Schmidt, Wolfgang; Meuffels, Paul; Roth, Georg; Brückel, Thomas

    2012-01-01

    Magnetoresistance (MR) has attracted tremendous attention for possible technological applications. Understanding the role of magnetism in manipulating MR may in turn steer the searching for new applicable MR materials. Here we show that antiferromagnetic (AFM) GdSi metal displays an anisotropic positive MR value (PMRV), up to ~415%, accompanied by a large negative thermal volume expansion (NTVE). Around T(N) the PMRV translates to negative, down to ~-10.5%. Their theory-breaking magnetic-field dependencies [PMRV: dominantly linear; negative MR value (NMRV): quadratic] and the unusual NTVE indicate that PMRV is induced by the formation of magnetic polarons in 5d bands, whereas NMRV is possibly due to abated electron-spin scattering resulting from magnetic-field-aligned local 4f spins. Our results may open up a new avenue of searching for giant MR materials by suppressing the AFM transition temperature, opposite the case in manganites, and provide a promising approach to novel magnetic and electric devices. PMID:23087815

  18. Epitaxial Ni3FeN thin films: A candidate for spintronic devices and magnetic sensors

    International Nuclear Information System (INIS)

    A new type of epitaxial ferromagnetic nitride (Ni3 Fe N = permalloy nitride = “PyN”) compound films were grown on Al2O3(1120) substrates using reactive triode magnetron sputtering. The results of electron back-scattering diffraction and x-ray diffraction techniques indicate a high quality epitaxial crystalline structure with growth normal of (100). Magnetization measurements of epitaxial PyN films revealed several unique results. (1) A textbook square hysteresis loop that suggest existence of single magnetic domain in these films. (2) A coercive field is tunable from a few mOe up to a few Oe by changing the film thickness. (3) A magnetization that switches (rotate) over a very small field range of δHC ≤ 0.05 Oe, independent of the film thickness. This small δH indicates a very large resistive sensitivity (δR/δH) of the epitaxial PyN. (4) The epitaxial PyN thermal cycling through several cycles between “2 and 800 K” (-271 °C to +527 °C) shows much less degradation only about 2-5% compared to 40% degradation of a simple Py film. Four-probe transport measurements give an anisotropic magnetoresistance of ≈6%, sufficiently higher than other known ferromagnetic materials. These interesting properties are ideal for a variety of spintronic devices and magnetic sensors.

  19. High field magnetoresistance in Co-Al-O nanogranular films

    Czech Academy of Sciences Publication Activity Database

    Chayka, Oleksandr; Kraus, Luděk; Lobotka, P.; Sechovsky, V.; Kocourek, Tomáš; Jelínek, Miroslav

    2006-01-01

    Roč. 300, - (2006), s. 293-299. ISSN 0304-8853 R&D Projects: GA AV ČR(CZ) IAA1010204 Institutional research plan: CEZ:AV0Z10100520 Keywords : granular system * superparamagnetism * tunneling magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.212, year: 2006

  20. Large magnetoresistance and electronic anisotropy in NbAs2

    Science.gov (United States)

    Shen, Bing; Jiang, Shan; Ni, Ni

    Recently, extremely large magnetoresistance (XMR) was discovered in semimetal such as WTe2 LaSb and so on, triggering extensive reseach on these materials and the origin of XMR. In this talk, we will report the transport properties of non-magnetic layered pnictide material NbAs2. Large transverse magnetoresistance is observed. At 10 K, the magnetoresistance is around 13000 % in the field of 9 T and shows no saturation behavior. The temperature dependent resistivity at various fields exhibits metal-to-semiconductor transition behavior around 100 K, which is coincident with the sudden increase of the Hall signal in the same temperature region. The angle dependent magnetoresistance at various temperatures follows the 3D scaling behavior with the mass anisotropy around 1.3-1.4, indicative of its 3D electron structure. Quantum oscillation data reveal the existence of at least three Fermi pockets in this material. Work at UCLA was supported by the U.S. Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences (BES) under Award Number DE-SC0011978.

  1. Characterization and Application of Large Magnetoresistance in Organic Semiconductors

    Science.gov (United States)

    Wohlgenannt, Markus

    2007-03-01

    Recent years have seen a surge in interest in magnetoresistive and spintronic properties of organic semiconductors, whereas this field was previously almost exclusively concerned with their electrooptical properties. We report on the extensive experimental characterization of a recently discovered large and intriguing magnetoresistive effect in organic light- emitting diodes that reaches up to 10% at room temperature for magnetic fields, B = 10mT. This magnetoresistive effect is therefore amongst the largest of any bulk material. The study includes a range of materials that show greatly different chemical structure, mobility, hyperfine and spin-orbit coupling strength. We show that the applied magnetic field affects the carrier transport inside the bulk semiconductor. By demonstrating that the effect is critically altered by the presence of strong spin- orbit coupling and that it does not occur in fullerene devices, we prove that the transport in organics sensitively depends on spin-dynamics induced by hyperfine interaction with the hydrogen protons. We discuss a possible relation between organic magnetoresistance and other magnetic field effects in organics that were known long before its discovery. As a possible mechanism we describe how Pauli's principle restricts carrier hopping between singly occupied sites near the Fermi level. However, spin-mixing by the hyperfine interaction may partially lift this restriction. Since the devices we describe can be manufactured cheaply they hold promise for applications where large numbers of magnetoresistive devices are needed, such as magnetic random- access-memory (MRAM); and applications related to organic light- emitting diode displays such as touch screens where the position of a magnetic stylus is detected (patent pending). We will show a video of a simple demonstrator device.

  2. Continuum mechanics of anisotropic materials

    CERN Document Server

    Cowin, Stephen C

    2013-01-01

    Continuum Mechanics of Anisotropic Materials(CMAM) presents an entirely new and unique development of material anisotropy in the context of an appropriate selection and organization of continuum mechanics topics. These features will distinguish this continuum mechanics book from other books on this subject. Textbooks on continuum mechanics are widely employed in engineering education, however, none of them deal specifically with anisotropy in materials. For the audience of Biomedical, Chemical and Civil Engineering students, these materials will be dealt with more frequently and greater accuracy in their analysis will be desired. Continuum Mechanics of Anisotropic Materials' author has been a leader in the field of developing new approaches for the understanding of anisotropic materials.

  3. Superlens from complementary anisotropic metamaterials

    Science.gov (United States)

    Li, G. X.; Tam, H. L.; Wang, F. Y.; Cheah, K. W.

    2007-12-01

    Metamaterials with isotropic property have been shown to possess novel optical properties such as a negative refractive index that can be used to design a superlens. Recently, it was shown that metamaterials with anisotropic property can translate the high-frequency wave vector k values from evanescence to propagating. However, electromagnetic waves traveling in single-layer anisotropic metamaterial produce diverging waves of different spatial frequency. In this work, it is shown that, using bilayer metamaterials that have complementary anisotropic property, the diverging waves are recombined to produce a subwavelength image, i.e., a superlens device can be designed. The simulation further shows that the design can be achieved using a metal/oxide multilayer, and a resolution of 30 nm can be easily obtained in the optical frequency range.

  4. Dynamical analysis of anisotropic inflation

    Science.gov (United States)

    Karčiauskas, Mindaugas

    2016-06-01

    The inflaton coupling to a vector field via the f(φ)2F μνFμν term is used in several contexts in the literature, such as to generate primordial magnetic fields, to produce statistically anisotropic curvature perturbation, to support anisotropic inflation, and to circumvent the η-problem. In this work, I perform dynamical analysis of this system allowing for the most general Bianchi I initial conditions. I also confirm the stability of attractor fixed points along phase-space directions that had not been investigated before.

  5. Latest developments in anisotropic hydrodynamics

    CERN Document Server

    Tinti, Leonardo

    2015-01-01

    We discuss the leading order of anisotropic hydrodynamics expansion. It has already been shown that in the (0+1) and (1+1)-dimensional cases it is consistent with the second order viscous hydrodynamics, and it provides a striking agreement with the exact solutions of the Boltzmann equation. Quite recently, a new set of equations has been proposed for the leading order of anisotropic hydrodynamics, which is consistent with the second order viscous hydrodynamics in the most general (3+1)-dimensional case, and does not require a next-to-leading treatment for describing pressure anisotropies in the transverse plane.

  6. Anisotropic hydrodynamics: Motivation and methodology

    International Nuclear Information System (INIS)

    In this proceedings contribution I review recent progress in our understanding of the bulk dynamics of relativistic systems that possess potentially large local rest frame momentum-space anisotropies. In order to deal with these momentum-space anisotropies, a reorganization of relativistic viscous hydrodynamics can be made around an anisotropic background, and the resulting dynamical framework has been dubbed “anisotropic hydrodynamics”. I also discuss expectations for the degree of momentum-space anisotropy of the quark–gluon plasma generated in relativistic heavy ion collisions at RHIC and LHC from second-order viscous hydrodynamics, strong-coupling approaches, and weak-coupling approaches

  7. Si, Ge and SiGe wires for sensor application

    International Nuclear Information System (INIS)

    Resistance and magnetoresistance of Si, Ge and Si-Ge micro- and nanowires were studied in temperature range 4,2-300 K at magnetic fields up to 14 T. The wires diameters range from 200 nm to 20 μm. Ga-In gates were created to wires and ohmic I-U characteristics were observed in all temperature range. It was found high elastic strain for Ge nanowires (of about 0,7%) as well as high magnitude of magnetoresistance (of about 250% at 14 T), which was used to design multifunctional sensor of simultaneous measurements of strain and magnetic field intensity. (authors)

  8. Optimal Magnetic Sensor Vests for Cardiac Source Imaging

    OpenAIRE

    Stephan Lau; Bojana Petković; Jens Haueisen

    2016-01-01

    Magnetocardiography (MCG) non-invasively provides functional information about the heart. New room-temperature magnetic field sensors, specifically magnetoresistive and optically pumped magnetometers, have reached sensitivities in the ultra-low range of cardiac fields while allowing for free placement around the human torso. Our aim is to optimize positions and orientations of such magnetic sensors in a vest-like arrangement for robust reconstruction of the electric current distributions in t...

  9. Ultra-sharp oscillatory magneto-resistance in spatially confined La0.3Pr0.4Ca0.3MnO3 epitaxial thin films

    International Nuclear Information System (INIS)

    Our investigations of magneto-transport properties of La0.3Pr0.4Ca0.3MnO3 manganite thin films of reduced dimensions revealed dramatic changes in R(θ), the dependence of resistivity on the angle between the magnetic field direction and the current direction, and consequently in the anisotropic magneto-resistance. A regular oscillatory  sin2θ form of R(θ) is replaced by a very sharp rectangular-shaped ones when the dimensions of the system become comparable to the size of the intrinsic electronic domains. We discuss possible mechanisms that could be responsible for these changes.

  10. Failure in imperfect anisotropic materials

    DEFF Research Database (Denmark)

    Legarth, Brian Nyvang

    2005-01-01

    The fundamental cause of crack growth, namely nucleation and growth of voids, is investigated numerically for a two phase imperfect anisotropic material. A unit cell approach is adopted from which the overall stress strain is evaluated. Failure is observed as a sudden stress drop and depending on...

  11. Magnetic relaxation in anisotropic magnets

    DEFF Research Database (Denmark)

    Lindgård, Per-Anker

    1971-01-01

    The line shape and the kinematic and thermodynamic slowing down of the critical and paramagnetic relaxation in axially anisotropic materials are discussed. Kinematic slowing down occurs only in the longitudinal relaxation function. The thermodynamic slowing down occurs in either the transverse or...

  12. Structure and magnetoresistive properties in La endash manganite thin films

    International Nuclear Information System (INIS)

    This study investigates the structure of perovskite thin films and its influence on their colossal magnetoresistance (CMR) properties. Epitaxial thin films of perovskite manganites La1-xBxMnO3-δ (B=Ca,Sr) were prepared on SrTiO3 (100) substrates using on- and off-axis pulsed laser deposition (PLD) techniques. X-ray diffraction, resistance and magnetoresistance measurements, as well as high-resolution transmission electron microscopy (HRTEM) investigations were carried out. HRTEM observations reveal epitaxial growth for the first few layers of all prepared samples. Thicker on-axis prepared films grow with a large number of defects, whereas off-axis prepared samples grow in a columnar structure. Since the magnetic properties in systems with double-exchange interaction are very sensitive to the local structure it has great influence on the electronic properties. copyright 1997 American Institute of Physics

  13. Enhancing magnetoresistance in tetrathiafulvalene carboxylate modified iron oxide nanoparticle assemblies

    Science.gov (United States)

    Lv, Zhong-Peng; Luan, Zhong-Zhi; Cai, Pei-Yu; Wang, Tao; Li, Cheng-Hui; Wu, Di; Zuo, Jing-Lin; Sun, Shouheng

    2016-06-01

    We report a facile approach to stabilize Fe3O4 nanoparticles (NPs) by using tetrathiafulvalene carboxylate (TTF-COO-) and to control electron transport with an enhanced magnetoresistance (MR) effect in TTF-COO-Fe3O4 NP assemblies. This TTF-COO-coating is advantageous over other conventional organic coatings, making it possible to develop stable Fe3O4 NP arrays for sensitive spintronics applications.We report a facile approach to stabilize Fe3O4 nanoparticles (NPs) by using tetrathiafulvalene carboxylate (TTF-COO-) and to control electron transport with an enhanced magnetoresistance (MR) effect in TTF-COO-Fe3O4 NP assemblies. This TTF-COO-coating is advantageous over other conventional organic coatings, making it possible to develop stable Fe3O4 NP arrays for sensitive spintronics applications. Electronic supplementary information (ESI) available: Experimental details; supplementary figures and tables. See DOI: 10.1039/c6nr03311c

  14. Giant magnetoresistance in the variable-range hopping regime

    Science.gov (United States)

    Ioffe, L. B.; Spivak, B. Z.

    2013-09-01

    We predict the universal power-law dependence of the localization length on the magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large negative magnetoresistance in the hopping regime. The reason for the universality is that the problem of the electron tunneling in a random media belongs to the same universality class as the directed polymer problem even in the case of wave functions of random sign. We present numerical simulations that prove this conjecture. We discuss the existing experiments that show anomalously large magnetoresistance. We also discuss the role of localized spins in real materials and the spin polarizing effect of the magnetic field.

  15. Giant magnetoresistance in the variable-range hopping regime

    Energy Technology Data Exchange (ETDEWEB)

    Ioffe, L. B., E-mail: ioffe@physics.rutgers.edu [Universite Pierre et Marie Curie, LPTHE (France); Spivak, B. Z. [University of Washington, Department of Physics (United States)

    2013-09-15

    We predict the universal power-law dependence of the localization length on the magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large negative magnetoresistance in the hopping regime. The reason for the universality is that the problem of the electron tunneling in a random media belongs to the same universality class as the directed polymer problem even in the case of wave functions of random sign. We present numerical simulations that prove this conjecture. We discuss the existing experiments that show anomalously large magnetoresistance. We also discuss the role of localized spins in real materials and the spin polarizing effect of the magnetic field.

  16. Giant magnetoresistance in the variable-range hopping regime

    International Nuclear Information System (INIS)

    We predict the universal power-law dependence of the localization length on the magnetic field in the strongly localized regime. This effect is due to the orbital quantum interference. Physically, this dependence shows up in an anomalously large negative magnetoresistance in the hopping regime. The reason for the universality is that the problem of the electron tunneling in a random media belongs to the same universality class as the directed polymer problem even in the case of wave functions of random sign. We present numerical simulations that prove this conjecture. We discuss the existing experiments that show anomalously large magnetoresistance. We also discuss the role of localized spins in real materials and the spin polarizing effect of the magnetic field

  17. Hall effect in the extremely large magnetoresistance semimetal WTe2

    Science.gov (United States)

    Luo, Yongkang; Li, H.; Dai, Y. M.; Miao, H.; Shi, Y. G.; Ding, H.; Taylor, A. J.; Yarotski, D. A.; Prasankumar, R. P.; Thompson, J. D.

    2015-11-01

    We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe2. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron- and hole-type carriers were determined. We observed a sudden increase in the hole density below ˜160 K, which is likely associated with the temperature-induced Lifshitz transition reported by a previous photoemission study. In addition, a more pronounced reduction in electron density occurs below 50 K, giving rise to comparable electron and hole densities at low temperature. Our observations indicate a possible electronic structure change below 50 K, which might be the direct driving force of the electron-hole "compensation" and the extremely large magnetoresistance as well. Numerical simulations imply that this material is unlikely to be a perfectly compensated system.

  18. Hall effect in the extremely large magnetoresistance semimetal WTe2

    International Nuclear Information System (INIS)

    We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe2. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron- and hole-type carriers were determined. We observed a sudden increase in the hole density below ∼160 K, which is likely associated with the temperature-induced Lifshitz transition reported by a previous photoemission study. In addition, a more pronounced reduction in electron density occurs below 50 K, giving rise to comparable electron and hole densities at low temperature. Our observations indicate a possible electronic structure change below 50 K, which might be the direct driving force of the electron-hole “compensation” and the extremely large magnetoresistance as well. Numerical simulations imply that this material is unlikely to be a perfectly compensated system

  19. Magnetoresistance of microstructured permalloy ellipses having multi-domain configurations

    Energy Technology Data Exchange (ETDEWEB)

    Kuo, C.Y. [Taiwan SPIN Research Center and Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China); Chung, W.S. [Taiwan SPIN Research Center and Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China); Wu, J.C. [Taiwan SPIN Research Center and Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China)]. E-mail: phjcwu@cc.ncue.edu.tw; Horng, Lance [Taiwan SPIN Research Center and Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China); Wei, Z.-H. [Department of Power Mechanical Engineering, National Tsing Hua University, HsinChu 300, Taiwan (China); Lai, M.-F. [Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei 10607, Taiwan (China); Chang, C.-R. [Center for Nanostorage Research, Department of Physics, National Taiwan University, Taipei 10607, Taiwan (China)

    2007-03-15

    Mirostructured permalloy ellipses having purposely designed multi-domain configurations were investigated. The samples were fabricated using e-beam lithography through a lift-off process. The magnetoresistance measurements were carried out with a constant dc sensing current under the external magnetic field applied along the short axis. The magnetoresistance curves manifest characteristic features in accordance with the specific domain configurations. Step-like/kink features were observed on the ellipses with cross-tie wall/two-vortex configuration and step-like plus kink magnetorsistance curve was found on the ellipse with cross-tie wall combining with two-vortex structure. A magnetic force microscopy and a micromagnetic simulation were employed to support these results.

  20. Subatomic mechanism of the oscillatory magnetoresistance in superconductors

    CERN Document Server

    Ivlev, Boris I

    2016-01-01

    In the recent experiments the unusual oscillatory magnetoresistance in superconductors was discovered with a periodicity that is essentially independent on magnetic field direction and even material parameters. The nearly universal period points to a subatomic mechanism of the phenomenon. This mechanism is related to formation inside samples of small rings of a subatomic (Compton) size. Electron states inside rings are hybridized with conduction electrons which carry the same spin imbalance in energy as rings. The imbalance occurs due to spin interaction with the orbital momentum of the ring. The conductivity near $T_c$ is determined by fluctuating Cooper pairs consisting of electrons with shifted energies. Due to different angular momenta of rings these energies periodically depend on magnetic field resulting in the observed oscillatory magnetoresistance. Calculated universal positions of peaks $(n+1/2)\\Delta H$ ($n=0,1,2...$) on the $R(H)$ curve are in a very good agreement with experiments.

  1. Drastic pressure effect on the extremely large magnetoresistance in WTe2: quantum oscillation study

    OpenAIRE

    Cai, P. L.; Hu, J.; He, L. P.; Pan, J.; Hong, X. C.; Zhang, Z; Zhang, J.; J. Wei; Mao, Z. Q.; Li, S. Y.

    2014-01-01

    The quantum oscillations of the magnetoresistance under ambient and high pressure have been studied for WTe$_2$ single crystals, in which extremely large magnetoresistance was discovered recently. By analyzing the Shubnikov-de Haas oscillations, four Fermi surfaces are identified, and two of them are found to persist to high pressure. The sizes of these two pockets are comparable, but show increasing difference with pressure. At 0.3 K and in 14.5 T, the magnetoresistance decreases drastically...

  2. Giant magnetoresistance effects in 5f-materials

    International Nuclear Information System (INIS)

    Large magnetoresistance effects related to magnetic-moments reorientation were observed in numerous U-intermetallics. The resemblance to magnetic multilayers motivated our discussion of responsible mechanisms, in the background of which is probably the strong hybridization of 5f- and conduction-electron states. A clear cut evidence of relative contributions of varied scattering rate on the one hand and the carrier concentration on the other may be obtained from experiments on samples with controlled disorder. (orig.)

  3. Tunnel Magnetoresistance of a Single-Molecule Junction

    OpenAIRE

    Saffarzadeh, Alireza

    2008-01-01

    Based on the non-equilibrium Green's function (NEGF) technique and the Landauer-B\\"{u}ttiker theory, the possibility of a molecular spin-electronic device, which consists of a single C$_{60}$ molecule attached to two ferromagnetic electrodes with finite cross sections, is investigated. By studying the coherent spin-dependent transport through the energy levels of the molecule, it is shown that the tunnel magnetoresistance (TMR) of the molecular junction depends on the applied voltages and the...

  4. Jitterbug spin channel mixing in heterogeneous giant magnetoresistive material

    Science.gov (United States)

    Gregg, J. F.; Allen, W.; Thompson, S. M.; Watson, M. L.; Gehring, G. A.

    1996-04-01

    A mechanism is described which considers the effect of small magnetic particles on the spin diffusion length in a granular giant magnetoresistive material. Spin depolarization occurs by precession of the spin orientation of the carrier due to the s-d exchange interaction within a magnetic particle. Numerical simulation of this jitterbug effect is found to generate a temperature and field dependence of the distance a carrier may travel within the sample without losing its spin memory.

  5. Subatomic mechanism of the oscillatory magnetoresistance in superconductors

    OpenAIRE

    Ivlev, Boris I.

    2016-01-01

    In the recent experiments the unusual oscillatory magnetoresistance in superconductors was discovered with a periodicity that is essentially independent on magnetic field direction and even material parameters. The nearly universal period points to a subatomic mechanism of the phenomenon. This mechanism is related to formation inside samples of small rings of a subatomic (Compton) size. Electron states inside rings are hybridized with conduction electrons which carry the same spin imbalance i...

  6. Asymmetric tunable tunneling magnetoresistance in single-electron transistors

    CERN Document Server

    Pirmann, M; Schön, G

    2000-01-01

    We show that the tunneling magnetoresistance (TMR) of a ferromagnetic single-electron transistor in the sequential tunneling regime shows asymmetric Coulomb blockade oscillations as a function of gate voltage if the individual junction-TMRs differ. The relative amplitude of these oscillations grows significantly if the bias voltage is increased, becoming as large as 30% when the bias voltage is comparable to the charging energy of the single-electron transistor. This might be useful for potential applications requiring a tunable TMR.

  7. Enhancing magnetoresistance in tetrathiafulvalene carboxylate modified iron oxide nanoparticle assemblies.

    Science.gov (United States)

    Lv, Zhong-Peng; Luan, Zhong-Zhi; Cai, Pei-Yu; Wang, Tao; Li, Cheng-Hui; Wu, Di; Zuo, Jing-Lin; Sun, Shouheng

    2016-06-16

    We report a facile approach to stabilize Fe3O4 nanoparticles (NPs) by using tetrathiafulvalene carboxylate (TTF-COO(-)) and to control electron transport with an enhanced magnetoresistance (MR) effect in TTF-COO-Fe3O4 NP assemblies. This TTF-COO-coating is advantageous over other conventional organic coatings, making it possible to develop stable Fe3O4 NP arrays for sensitive spintronics applications. PMID:27271347

  8. Tuning spin transport properties and molecular magnetoresistance through contact geometry

    Energy Technology Data Exchange (ETDEWEB)

    Ulman, Kanchan [Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); Narasimhan, Shobhana [Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); Sheikh Saqr Laboratory, ICMS, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064 (India); Delin, Anna [Department of Materials and Nanophysics, School of Information and Communication Technology, Electrum 229, Royal Institute of Technology (KTH), SE-16440 Kista (Sweden); Department of Physics and Astronomy, Uppsala University, Box 516, SE-75120 Uppsala (Sweden); SeRC (Swedish e-Science Research Center), KTH, SE-10044 Stockholm (Sweden)

    2014-01-28

    Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its “closed” and “open” conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ∼5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ∼400%.

  9. Spin-memory effect and negative magnetoresistance in hopping conductivity

    Science.gov (United States)

    Agam, Oded; Aleiner, Igor L.; Spivak, Boris

    2014-03-01

    We propose a mechanism for negative isotropic magnetoresistance in the hopping regime. It results from a memory effect encrypted into spin correlations that are not taken into account by the conventional theory of hopping conductivity. The spin correlations are generated by the nonequilibrium electric currents and lead to the decrease of the conductivity. The application of the magnetic field destroys the correlations thus enhancing the conductance. This effect can occur even at magnetic fields as small as a few gauss.

  10. Correlation of Crystal Quality and Extreme Magnetoresistance of WTe$_2$

    OpenAIRE

    Ali, Mazhar N.; Schoop, Leslie; Xiong, Jun; Flynn, Steven; Gibson, Quinn; Hirschberger, Max; Ong, N. P.; Cava, R. J.

    2015-01-01

    High quality single crystals of WTe$_2$ were grown using a Te flux followed by a cleaning step involving self-vapor transport. The method is reproducible and yields consistently higher quality single crystals than are typically obtained via halide assisted vapor transport methods. Magnetoresistance (MR)values at 9 Tesla and 2 Kelvin as high as 1.75 million \\%, nearly an order of magnitude higher than previously reported for this material, were obtained on crystals with residual resistivity ra...

  11. Raman scattering investigation of large positive magnetoresistance material WTe$_2$

    OpenAIRE

    Kong, W. -D.; Wu, S. -F.; Richard, P.; Lian, C. -S.; Wang, J. -T.; Yang, C. -L.; Shi, Y. -G.; H. Ding

    2015-01-01

    We have performed polarized Raman scattering measurements on WTe$_2$, for which an extremely large positive magnetoresistance has been reported recently. We observe 5 A$_1$ phonon modes and 2 A$_2$ phonon modes out of 33 Raman active modes, with frequencies in good accordance with first-principles calculations. The angular dependence of the intensity of the peaks observed is consistent with the Raman tensors of the $C_{2v}$ point group symmetry attributed to WTe$_2$. Although the phonon spect...

  12. Ultrafast Carrier Dynamics in the Large Magnetoresistance Material WTe$_{2}$

    OpenAIRE

    Dai, Y. M.; Bowlan, J.; Li, H.; Miao, H; Wu, S. F.; Kong, W. D.; Shi, Y. G.; Trugman, S. A.; Zhu, J. -X.; H. Ding; Taylor, A. J.; Yarotski, D. A.; Prasankumar, R. P.

    2015-01-01

    Ultrafast optical pump-probe spectroscopy is used to track carrier dynamics in the large magnetoresistance material WTe$_{2}$. Our experiments reveal a fast relaxation process occurring on a sub-picosecond time scale that is caused by electron-phonon thermalization, allowing us to extract the electron-phonon coupling constant. An additional slower relaxation process, occurring on a time scale of $\\sim$5-15 picoseconds, is attributed to phonon-assisted electron-hole recombination. As the tempe...

  13. Hall effect in the extremely large magnetoresistance semimetal WTe$_2$

    OpenAIRE

    Luo, Yongkang; Li, H.; Dai, Y. M.; Miao, H; Shi, Y. G.; H. Ding; Taylor, A. J.; Yarotski, D. A.; Prasankumar, R. P.; Thompson, J. D.

    2015-01-01

    We systematically measured the Hall effect in the extremely large magnetoresistance semimetal WTe$_2$. By carefully fitting the Hall resistivity to a two-band model, the temperature dependencies of the carrier density and mobility for both electron- and hole-type carriers were determined. We observed a sudden increase of the hole density below $\\sim$160~K, which is likely associated with the temperature-induced Lifshitz transition reported by a previous photoemission study. In addition, a mor...

  14. Magnetic and magnetoresistive properties of sodium-substituted lanthanum manganites

    Science.gov (United States)

    Tovstolytkin, A. I.; Tsmots', V. M.; Pan'kiv, L. I.; Litovchenko, P. G.; Pan'kiv, I. S.

    2010-03-01

    The magnetic, electric, and magnetoresistive properties of bulk samples of La1-xNaxMnO3±δ (x=0.08-0.16) are studied. It is shown that at low temperatures all samples are ferromagnetic and the temperature of the transition from the paramagnetic into the ferromagnetic state increases with increasing sodium content. It is found that the saturation magnetization reaches its maximum value, close to that computed theoretically, in samples with x =0.12. A deviation of x from 0.12 decreases the saturation magnetization and broadens the magnetic transition. Analysis of the behavior of the magnetoresistance shows that there exists, together with the ferromagnetic conducting phase, a disordered weakly conducting phase, the volume fraction of the latter increasing as x deviates away from 0.12. The characteristic behavior of the magnetic and magnetoresistive properties of La1-xNaxMnO3±δ samples are tied to the particulars of the evolution of the chemical composition and defectiveness of the samples as a function of the sodium concentration.

  15. Magnetoresistance in organic spintronic devices: the role of nonlinear effects

    International Nuclear Information System (INIS)

    We derive kinetic equations describing injection and transport of spin-polarized carriers in organic semiconductors with hopping conductivity via an impurity level. The model predicts a strongly voltage dependent magnetoresistance, defined as resistance variation between devices with parallel and antiparallel electrode magnetizations (spin-valve effect). The voltage dependence of the magnetoresistance splits into three distinct regimes. The first regime matches well-known inorganic spintronic regimes, corresponding to barrier-controlled spin injection or the well-known conductivity mismatch case. The second regime at intermediate voltages corresponds to strongly suppressed magnetoresistance. The third regime develops at higher voltages and accounts for a novel paradigm. It is promoted by the strong nonlinearity in the charge transport whose strength is characterized by the dimensionless parameter eU/kBT. This nonlinearity, depending on device conditions, can lead to both significant enhancement or to exponential suppression of the spin-valve effect in organic devices. We believe that these predictions are valid beyond the case of organic semiconductors and should be considered for any material characterized by strongly nonlinear charge transport. (paper)

  16. Angular dependence of magnetoresistance in silicon with nanoclusters of manganese atoms

    International Nuclear Information System (INIS)

    In silicon samples doped by manganese a significant angular dependence of magnetoresistance has been experimentally observed. In samples in which the greater part of atoms is located in clusters, the negative magnetoresistance has maximal value at φ=90 deg and 270 deg and minimal one at φ=0 deg, 180 deg and 360 deg. In overcompensated samples, where nanoclusters did not reveal, on the contrary, the magnetoresistance has maximal value at φ=0 deg, 180 deg and 360 deg and minimal value at φ=90 deg and 270 deg. A character of angular dependence of magnetoresistance does not affected by temperature and level of lighting of samples. (authors)

  17. Magnetization, magnetoresistance, and x-ray diffraction measurements of discontinuous [Ni80Fe20/Ag] multilayers (abstract)

    Science.gov (United States)

    Lorenz, T.; Moske, M.; Käufler, A.; Geisler, H.; Samwer, K.

    1996-04-01

    Thin films for magnetic sensor application require a high sensitivity at low magnetic fields, for example, realized by Permalloy films. Promising candidates for a further improvement are discontinuous multilayers, first reported by Hylton et al. In our study, we report on [2.5 nm Ni80Fe20/y nm Ag] multilayers with the spacer layer thickness y ranging from 1.2 nm to 6.0 nm. The multilayers were electron beam deposited in UHV at different temperatures. The substrates used are thermally oxidized silicon wafers. The magnetization is obtained using a vibrating sample magnetometer (VSM), the magnetoresistance is measured at room temperature with the Montgomery method. Low and high angle x-ray diffraction measurements are performed in a Siemens D-5000 diffractometer. The samples are annealed ex situ between room temperature and 340 °C. The magnetoresistance is maximal after annealing the samples at a specific temperature, which decreases with increasing Ag-spacer thickness y. Moreover, the GMR decreases if the multilayers are deposited at elevated temperatures (100-200 °C). We also report on the dependence of the GMR on the interface roughness (σ≊0.5 nm rms) which we deduce from the small angle x-ray diffraction measurements. For a characterization of the reliability, we also investigated the dependence of the GMR on aging at 100 °C for several hours.

  18. Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal

    Science.gov (United States)

    Hou, Zhipeng; Wang, Yue; Liu, Enke; Zhang, Hongwei; Wang, Wenhong; Wu, Guangheng

    2015-11-01

    High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesized by a Bi self-flux method. This compound was revealed to be a hole-dominated semimetal with a large low-field magnetoresistance up to 240% at 2 K in a magnetic field of 1 T. Magneto-transport measurements demonstrated that the large low-field magnetoresistance effect resulted from the coexistence of field-induced metal-semiconductor transition and weak-antilocalization effect. Moreover, Hall measurements indicated that ScPtBi single crystal showed a high mobility over a wide temperature region even up to room temperature (4050 cm2V-1s-1 at 2 K-2016 cm2V-1s-1 at 300 K). These findings not only suggest the nonmagnetic ScPtBi semimetal a potential material candidate for applications in high-sensitivity magnetic sensors but also are of great significance to comprehensively understand the rare-earth based half-Heusler compounds.

  19. Conductivities in an anisotropic medium

    CERN Document Server

    Khimphun, Sunly; Park, Chanyong

    2016-01-01

    In order to imitate anisotropic medium of a condensed matter system, we take into account an Einstein-Maxwell-dilaton-axion model as a dual gravity theory where the anisotropy is caused by different momentum relaxations. This gravity model allows an anisotropic charged black hole solution. On this background, we investigate how the linear responses of vector modes like electric, thermoelectric, and thermal conductivities rely on the anisotropy. We find that the electric conductivity in low frequency limit shows a Drude peak and that in the intermediate frequency regime it reveals the power law behavior. Especially, when the anisotropy increases the exponent of the power law becomes smaller. In addition, we find that there exist a critical value for the anisotropy at which the DC conductivity reaches to its maximum value.

  20. Anisotropic Inflation and Cosmological Observations

    CERN Document Server

    Emami, Razieh

    2015-01-01

    Recent observations opened up a new window on the inflationary model building. As it was firstly reported by the WMAP data, there may be some indications of statistical anisotropy on the CMB map, although the statistical significance of these findings are under debate. Motivated by these observations, people begun considering new inflationary models which may lead to statistical anisotropy. The simplest possible way to construct anisotropic inflation is to introduce vector fields. During the course of this thesis, we study models of anisotropic inflation and their observational implications such as power spectrum, bispectrum etc. Firstly we build a new model, which contains the gauge field which breaks the conformal invariance while preserving the gauge invariance. We show that in these kind of models, there can be an attractor phase in the evolution of the system when the back-reaction of the gauge field becomes important in the evolution of the inflaton field. We then study the cosmological perturbation the...

  1. Stealths on Anisotropic Holographic Backgrounds

    CERN Document Server

    Ayón-Beato, Eloy; Juárez-Aubry, María Montserrat

    2015-01-01

    In this paper, we are interested in exploring the existence of stealth configurations on anisotropic backgrounds playing a prominent role in the non-relativistic version of the gauge/gravity correspondence. By stealth configuration, we mean a nontrivial scalar field nonminimally coupled to gravity whose energy-momentum tensor evaluated on the anisotropic background vanishes identically. In the case of a Lifshitz spacetime with a nontrivial dynamical exponent z, we spotlight the role played by the anisotropy to establish the holographic character of the stealth configurations, i.e. the scalar field is shown to only depend on the radial holographic direction. This configuration which turns out to be massless and without integration constants is possible for a unique value of the nonminimal coupling parameter. Then, using a simple conformal argument, we map this configuration into a stealth solution defined on the so-called hyperscaling violation metric which is conformally related to the Lifshitz spacetime. Thi...

  2. Magnetoresistance peak in the mixed state of the organic superconductor κ-(BEDT-TTF)2Cu[N(CN)2]Br

    International Nuclear Information System (INIS)

    In this letter, the authors report transport measurements with field and current parallel to the b axis (perpendicular to the conducting plane) in the organic superconductor κ-(BEDT-TTF)2Cu[N(CN)2]Br. The isothermal magnetoresistance R(H) displays a peak effect as a function of field. The peak resistance is substantially larger than that in large fields. The results are in sharp contrast to the conventional dissipation mechanisms in the mixed state of anisotropic superconductors, as in the case of Bi2Sr2CaCu2O8. Comparison with Hc2(T) obtained from magnetic measurements shows that the peak effect in R(H) occurs in the mixed state. Analysis of the data suggests a much larger Josephson junction resistance in the mixed state than that in the normal state, indicative of a new charge transport scattering mechanism in the presence of vortices

  3. Bilayer splitting versus Fermi-surface warping as an origin of slow oscillations of in-plane magnetoresistance in rare-earth tritellurides

    Science.gov (United States)

    Grigoriev, Pavel D.; Sinchenko, Alexander A.; Lejay, Pascal; Hadj-Azzem, Abdellali; Balay, Joël; Leynaud, Olivier; Zverev, Vladimir N.; Monceau, Pierre

    2016-06-01

    Slow oscillations (SlO) of the in-plane magnetoresistance with a frequency less than 4 T are observed in the rare-earth tritellurides and proposed as an effective tool to explore the electronic structure in various strongly anisotropic quasi-two-dimensional compounds. Contrary to the usual Shubnikov-de-Haas oscillations, SlO originate not from small Fermi-surface pockets, but from the entanglement of close frequencies due to a finite interlayer transfer integral, either between the two Te planes forming a bilayer or between two adjacent bilayers. From the observed angular dependence of the frequency and the phase of SlO we argue that they originate from the bilayer splitting rather than from the Fermi-surface warping. The SlO frequency gives the value of the interlayer transfer integral ≈1 meV for TbTe3 and GdTe3.

  4. Mirage technique in anisotropic solids

    OpenAIRE

    Quelin, X.; Perrin, B; Perrin, Bernard; Louis, G.

    1994-01-01

    Theoretical and experimental analysis of heat diffusion in an anisotropic medium are presented. The solution of the 3D thermal conduction equation in an orthorhombic medium is calculated by the mean of a Fourier transforms method. Experiments were performed on an orthorhombic polydiacetylene single crystal sample. The temperature field at the sample surface was determined using the photothermal probe beam deflection technique. Then the 3 coefficients of the thermal conductivity tensor have be...

  5. Nonlinear spin current and magnetoresistance of molecular tunnel junctions.

    Science.gov (United States)

    Waldron, Derek; Haney, Paul; Larade, Brian; MacDonald, Allan; Guo, Hong

    2006-04-28

    We report on a theoretical study of spin-polarized quantum transport through a Ni-bezenedithiol(BDT)-Ni molecular magnetic tunnel junction (MTJ). Our study is based on carrying out density functional theory within the Keldysh nonequilibrium Green's function formalism, so that microscopic details of the molecular MTJ are taken into account from first principles. A magnetoresistance ratio of approximately 27% is found for the Ni-BDT-Ni MTJ which declines toward zero as bias voltage is increased. The spin currents are nonlinear functions of bias voltage, even changing sign at certain voltages due to specific features of the coupling between molecular states and magnetic leads. PMID:16712257

  6. Enhanced Transverse Magnetoresistive Effect in Semiconducting Diamond Films

    Institute of Scientific and Technical Information of China (English)

    WANG Wan-Lu; LIAO Ke-Jun; WANG Bi-Ben

    2000-01-01

    A very large magnetoresistive effect in both homoepitaxial and heteroepitaxial semiconducting diamond films by chemical vapor deposition has been observed. The changes in the resistance of the films strongly depend on both magnetic field intensity and geometric form of the samples. The effect of disk structure is greater than that of stripe type samples, also variation in the resistance of homoepitaxial diamond films is greater than that of eteroepitaxial diamond films. The resistance of homoepitaxial diamond films with the disk structure is increased y a factor of 2.1 at room temperature under magnetic field intensity of 5 T, but only 0.80 for heteroepitaxial diamond films.

  7. Magnetoresistance in the ferromagnet/insulator/ferromagnet tunnel junction

    Institute of Scientific and Technical Information of China (English)

    Lu Hong-Xia; Dong Zheng-Chao; Fu Hao

    2008-01-01

    Recently experiments and theories show that the tunnel magnetoresistance (TMR) does not only depend on the ferromagnetic metal electrodes but also on the insulator.Considering the rough-scattering effect and spin-flip effect in the insulator,this paper investigates the TMR ratio in a ferromagnet/insulator/ferromagnet (FM/I/FM) tunnelling junction by using Slonczewsik's model.A more general expression of TMR ratio as a function of barrier height,interface roughness and spin-flip effect is obtained.In lower barrier case,it shows that the TMR ratio depends on the roughscattering effect and spin-flip effect.

  8. Tailoring magnetoresistance at the atomic level: An ab initio study

    KAUST Repository

    Tao, Kun

    2012-01-05

    The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage. © 2012 American Physical Society.

  9. Microstructural Characterisation of Giant Magnetoresistive Co/Cu Multilayers

    International Nuclear Information System (INIS)

    Antiferromagnetically-coupled Co/Cu multilayers prepared by magnetron sputtering exhibit pronounced giant magnetoresistance (GMR) effect at room temperature. Using both diffraction and imaging techniques, we studied the in-plane and out-of-plane crystallographic and layering microstructural features of these multilayers. Dominant characteristic features associated with the multilayers, such as lateral and vertical columnar grain orientations as well as layer undulations and regularity, were identified. By deliberately introducing microstructural changes to the materials system using buffer layer and heat treatment, detailed microstructural analysis have provided an insight into the dependence of GMR on microstructures of the multilayers.

  10. Microstructural Characterisation of Giant Magnetoresistive Co/Cu Multilayers

    International Nuclear Information System (INIS)

    Antiferromagnetically-coupled Co/Cu multilayers prepared by magnetron sputtering exhibit pronounced giant magnetoresistance (GMR) effect at room temperature. Using both diffraction and imaging techniques, we studied the in-plane and out-of-plane crystallographic and layering microstructural features of these multilayers. Dominant characteristic features associated with the multilayers, such as the lateral and vertical columnar grain orientations as well as layer undulations and regularity, were identified. By deliberately introducing microstructural changes to the materials system using buffer layer and heat treatment, detailed microstructural analysis had provided an insight into the dependence of GMR on the microstructures of the multilayers.

  11. Ultrahigh magnetoresistance at room temperature in molecular wires.

    Science.gov (United States)

    Mahato, R N; Lülf, H; Siekman, M H; Kersten, S P; Bobbert, P A; de Jong, M P; De Cola, L; van der Wiel, W G

    2013-07-19

    Systems featuring large magnetoresistance (MR) at room temperature and in small magnetic fields are attractive owing to their potential for applications in magnetic field sensing and data storage. Usually, the magnetic properties of materials are exploited to achieve large MR effects. Here, we report on an exceptionally large (>2000%), room-temperature, small-field (a few millitesla) MR effect in one-dimensional, nonmagnetic systems formed by molecular wires embedded in a zeolite host crystal. This ultrahigh MR effect is ascribed to spin blockade in one-dimensional electron transport. Its generic nature offers very good perspectives to exploit the effect in a wide range of low-dimensional systems. PMID:23828887

  12. Magnetoresistance of polycrystalline gadolinium with varying grain size

    International Nuclear Information System (INIS)

    In this paper, we report a study of evolution of low field magnetoresistance (MR) of Gadolinium as the grain size in the sample is changed from few microns (∼4 μm) to the nanoscopic regime (∼35 nm). The low field MR has a clear effect on varying grain size. In large grain sample (few μm), the magnetic domains are controlled by local anisotropy field determined mainly by the magnetocrystalline anisotropy. The low field MR clearly reflects the temperature dependence of the magnetocrystalline anisotropy. For decreasing gain size, the contribution of spin disorder at the grain boundary increases and enhances the local anisotropy field

  13. Negative magnetoresistance in variable-range-hopping conduction

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, H.L.; Spivak, B.Z.; Gelfand, M.P.; Feng, S. (Department of Physics, University of California, Los Angeles, California 90024 (United States))

    1991-11-15

    The orbital mechanism of negative magnetoresistance of variable-range-hopping conductivity is reconsidered by numerical simulations and qualitative arguments. At small magnetic fields the positive magnetic-field corrections to the localization length in two-dimensional samples are universal in the sense that they are independent of the details of the scattering potential (impurity concentration, amplitude of scattering, and proximity to the metal-insulator transition). Implications of these results to transport properties on the dielectric side of the superconductor-insulator transition are discussed.

  14. Low field anisotropic colossal magnetoresistance in $Sm_{0.53} Sr_{0.47} Mn O_3$ thin films

    OpenAIRE

    Manoj K. Srivastava; Singh, M P; Kaur, Amarjeet; Razavi, F. S.; Singh, H.K.

    2013-01-01

    SSMO5347 thin films (thicknesses ~200 nm) were deposited by on-axis dc magnetron sputtering on the single crystal LSAT (001) substrates. These films are oriented along the out of plane c-direction. The ferromagnetic and insulator-metal transition occurs at 96 K and 91 K, respectively. The magnetization easy axis is observed to lie in the plane of the film while the magnetic hard axis is found to be along the normal to this. The magnetotransport of the SSMO films, which was measured as a funct...

  15. Multidisciplinary approach to cylindrical anisotropic metamaterials

    OpenAIRE

    Carbonell Olivares, Jorge; Torrent Martí, Daniel; Diaz Rubio, Ana; Sánchez-Dehesa Moreno-Cid, José

    2011-01-01

    Anisotropic characteristics of cylindrically corrugated microstructures are analyzed in terms of their acoustic and electromagnetic (EM) behavior paying special attention to their differences and similarities. A simple analytical model has been developed using effective medium theory to understand the anisotropic features of both types of waves in terms of radial and angular components of the wave propagation velocity. The anisotropic constituent parameters have been obtained by measuring the...

  16. The magnetoresistive effect induced by stress in spin-valve structures

    Institute of Scientific and Technical Information of China (English)

    Qian Li-Jie; Xu Xiao-Yong; Hu Jing-Guo

    2009-01-01

    Using a method of free energy minimization, this paper investigates the magnetization properties of a ferromagnetic (FM) monolayer and an FM/antiferromagnetic (AFM) bilayer under a stress field, respectively. It then investigates the magnetoresistance (MR) of the spin-valve structure, which is built by an FM monolayer and an FM/AFM bilayer, and its dependence upon the applied stress field. The results show that under the stress field, the magnetization properties of the FM monolayer is obviously different from that of the FM/AFM bilayer, since the coupled AFM layer can obviously block the magnetization of the FM layer. This phenomenon makes the MR of the spin-valve structure become obvious.In detail, there are two behaviors for the MR of the spin-valve structure dependence upon the stress field distinguished by the coupling (FM coupling or AFM coupling) between the FM layer and the FM/AFM bilayer. Either behavior of the MR of the spin-valve structure depends on the stress field including its value and orientation. Based on these investigations, a perfect mechanical sensor at the nano-scale is suggested to be devised experimentally.

  17. Enhanced High-Frequency Magnetoresistance Responses of Melt-Extracted Co-Rich Soft Ferromagnetic Microwires

    Science.gov (United States)

    Lam, D. S.; Devkota, J.; Huong, N. T.; Srikanth, H.; Phan, M. H.

    2016-05-01

    We present the relationships between the structure, magnetic properties and high-frequency magnetoresistance (MR) effect in melt-extracted Co68.2Fe4.3B15Si12.5 microwires subject to thermal annealing. In order to release residual stresses to improve the magnetic softness while retaining the good mechanical property of an amorphous material, microwire samples were annealed at different temperatures of 100°C, 200°C, 350°C, 400°C, and 450°C for 15 min. We have shown that relative to an as-cast amorphous microwire, annealing microwires at T a = 100°C, 200°C, and 350°C improved both the magnetic softness and the MR effect, while an opposite trend was observed for the microwires annealed at T a = 400°C and 450°C. We have observed a distinct difference in the frequency dependence of MR response ( ξ) for dc applied magnetic fields below and above the effective anisotropy field of the microwires. While the microwire annealed at 200°C shows the largest MR ratio (~580%) at 100 MHz, the highest value of ξ (~34%/Oe) has been achieved at 400 MHz for the microwire annealed at 350°C. These results indicate that the optimally annealed Co68.2Fe4.3B15Si12.5 microwires are attractive candidates for high-frequency sensor applications.

  18. Radiation test of AMR sensors for MetNet Mars Precursor Mission

    Science.gov (United States)

    Sanz, R.; Fernandez, A. B.; Dominguez, J. A.; Martin, B.; Díaz-Michelena, M.

    2012-04-01

    The MetNet Mars Precursor Mission (MMPM) to Mars is supposed to be the first penetrator-based on ground meteorological station of a net over the Martian surface. MMPM will have very limited communications, power, and mass and lander and instrumentation will have to stand a huge mechanical shock, extremely low temperatures with huge temperature excursions and a radiation envelope of 15 krad. One of the instruments on board the MMPM is vector magnetometer, which main goal is to register the thermomangetic curves of the crustal magnetic minerals [1]. The instrument is based on Anisotropic MagnetoResistive (AMR) Commercial Off-The-Shelf (COTS) sensors due to the miniaturization objective and the successful previous experience in geomagnetic surveys [2, 3], achieving a whole mass of 65 g with a good trade off of magnetic performance (resolution levels in the order of the nT). This work reports on the magnetic sensor and the systematic gamma radiation tests performed on the AMR COTS chips. The objective is to study the damage and degradation of these sensors with the total irradiated dose (TID). The sensors were irradiated with gamma rays up to a total irradiation dose of 200 krad following ESCC Basic Specification No. 22900, with limited number of tested sensors. All tests were performed assuring low disturbances of variable magnetic fields, keeping those variations under the error threshold by means of magnetic shielding and registration of magnetic field variations with pT resolution. Parameters like linear response and saturation field, offset and set/reset strips deviations, and power consumption have been monitored for the four different types of sensors during the irradiation. The sensors chosen for the test have been of the HMC series by Honeywell: HMC 1021 S, HMC 1043, HMC 6042 and HMC 6052. HMC 1043 has been chosen for the AOCS of OPTOS picosatellite of INTA and as the magnetic sensor payload for MetNet precursor mission. HMC 1021 S sensors presented low

  19. Giant negative magneto-resistance in non-magnetic quantum dot arrays in the nearest-neighbor hopping conduction

    CERN Document Server

    Wang, X R

    1999-01-01

    We propose a new mechanism of negative magnetoresistance in non-magnetic quantum dot arrays or granular materials in which electron transport in dominated by hopping between two nearest-neighbor clusters. We study the dependence of magnetoresistance on temperature and separation between neighboring clusters. At a small separation we find a negative magnetoresistance at low temperatures and it changes over to a positive value as temperature increases. For a fixed temperature, magnetoresistance changes from negative to positive when the cluster separation increases. The change of magnetoresistance DELTA R/R can be more than 80 % at low temperatures.

  20. New charged anisotropic compact models

    Science.gov (United States)

    Kileba Matondo, D.; Maharaj, S. D.

    2016-07-01

    We find new exact solutions to the Einstein-Maxwell field equations which are relevant in the description of highly compact stellar objects. The relativistic star is charged and anisotropic with a quark equation of state. Exact solutions of the field equations are found in terms of elementary functions. It is interesting to note that we regain earlier quark models with uncharged and charged matter distributions. A physical analysis indicates that the matter distributions are well behaved and regular throughout the stellar structure. A range of stellar masses are generated for particular parameter values in the electric field. In particular the observed mass for a binary pulsar is regained.

  1. Model for Anisotropic Directed Percolation

    OpenAIRE

    Nguyen, V. Lien; Canessa, Enrique

    1997-01-01

    We propose a simulation model to study the properties of directed percolation in two-dimensional (2D) anisotropic random media. The degree of anisotropy in the model is given by the ratio $\\mu$ between the axes of a semi-ellipse enclosing the bonds that promote percolation in one direction. At percolation, this simple model shows that the average number of bonds per site in 2D is an invariant equal to 2.8 independently of $\\mu$. This result suggests that Sinai's theorem proposed originally fo...

  2. Anisotropic spectra of acoustic turbulence

    International Nuclear Information System (INIS)

    We found universal anizopropic spectra of acoustic turbulence with the linear dispersion law ω(k)=ck within the framework of generalized kinetic equation which takes into account the finite time of three-wave interactions. This anisotropic spectra can assume both scale-invariant and non-scale-invariant form. The implications for the evolution of the acoustic turbulence with nonisotropic pumping are discussed. The main result of the article is that the spectra of acoustic turbulence tend to become more isotropic. (c) 2000 The American Physical Society

  3. Anisotropic and nonlinear optical waveguides

    CERN Document Server

    Someda, CG

    1992-01-01

    Dielectric optical waveguides have been investigated for more than two decades. In the last ten years they have had the unique position of being simultaneously the backbone of a very practical and fully developed technology, as well as an extremely exciting area of basic, forefront research. Existing waveguides can be divided into two sets: one consisting of waveguides which are already in practical use, and the second of those which are still at the laboratory stage of their evolution. This book is divided into two separate parts: the first dealing with anisotropic waveguides, an

  4. BRDF Interpolation using Anisotropic Stencils

    Czech Academy of Sciences Publication Activity Database

    Vávra, Radomír; Filip, Jiří

    Springfield: Society for Imaging Science and Technology , 2016 - (Imai, F.; Ortiz Segovia, M.; Urban, P.), MMRMA-356.1-MMRMA-356.6 ISSN 2470-1173. [IS&T International Symposium on Electronic Imaging 2016, Measuring, Modeling, and Reproducing Material Appearance 2016. San Francisco (US), 14.2.2016-18.2.2016] R&D Projects: GA ČR(CZ) GA14-02652S Institutional support: RVO:67985556 Keywords : BRDF * stencil * anisotropic * interpolation Subject RIV: BD - Theory of Information http://library.utia.cas.cz/separaty/2016/RO/vavra-0457068.pdf

  5. Eddy current probe development based on a magnetic sensor array

    International Nuclear Information System (INIS)

    This research deals with in the study of the use of innovating magnetic sensors in eddy current non destructive inspection. The author reports an analysis survey of magnetic sensor performances. This survey enables the selection of magnetic sensor technologies used in non destructive inspection. He presents the state-of-the-art of eddy current probes exploiting the qualities of innovating magnetic sensors, and describes the methods enabling the use of these magnetic sensors in non destructive testing. Two main applications of innovating magnetic sensors are identified: the detection of very small defects by means of magneto-resistive sensors, and the detection of deep defects by means of giant magneto-impedances. Based on the use of modelling, optimization, signal processing tools, probes are manufactured for these both applications

  6. Unidirectional spin Hall magnetoresistance in ferromagnet/normal metal bilayers

    Science.gov (United States)

    Avci, Can Onur; Garello, Kevin; Ghosh, Abhijit; Gabureac, Mihai; Alvarado, Santos F.; Gambardella, Pietro

    2015-07-01

    Magnetoresistive effects are usually invariant on inversion of the magnetization direction. In non-centrosymmetric conductors, however, nonlinear resistive terms can give rise to a current dependence that is quadratic in the applied voltage and linear in the magnetization. Here we demonstrate that such conditions are realized in simple bilayer metal films where the spin-orbit interaction and spin-dependent scattering couple the current-induced spin accumulation to the electrical conductivity. We show that the longitudinal resistance of Ta|Co and Pt|Co bilayers changes when reversing the polarity of the current or the sign of the magnetization. This unidirectional magnetoresistance scales linearly with current density and has opposite sign in Ta and Pt, which we associate with the modification of the interface scattering potential induced by the spin Hall effect in these materials. Our results suggest a route to control the resistance and detect magnetization switching in spintronic devices using a two-terminal geometry, which applies also to heterostructures including topological insulators.

  7. Theory of the negative magnetoresistance in magnetic metallic multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Hood, R.Q.; Falicov, L.M. [California Univ., Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley Lab., CA (United States)

    1993-04-01

    The Boltzman equation is solved for a system consisting of alternating ferromagnetic normal metallic layers. The in-plane conductance of the film is calculated for two configurations: successive ferromagnetic layers aligned parallel and antiparallel to each other. Results explain the giant negative magnetoresistance encountered in these systems when an initial antiparallel arrangement is changed into a parallel configuration by application of an extemal magnetic field. The calculation depends on geometric parameters (the thicknesses of the layers); intrinsic metal parameters (number of conduction electrons, magnetization and effective masses in the layers); bulk sample properties (conductivity relaxation times); and interface scattering properties (diffuse scattering versus potential scattering at the interfaces). It is found that a large negative magnetoresistance requires, in general, considerable asymmetry in the interface scattering for the two spin orienmtions. All qualitative features of the experiments are reproduced. Quantitative agreement can be achieved with sensible values of the parameters. The effect can be conceptually explained based on considerations of phase-space availability for an electron of a given spin orientation as it travels through the multilayer sample in the various configurations and traverses the interfaces.

  8. Performances of a Newly High Sensitive Trilayer F/Cu/F GMI Sensor

    OpenAIRE

    Alves, F.; Kaviraj, B.; Rached, L. Abi; J. Moutoussamy; Coillot, C.

    2007-01-01

    We have selected stress-annealed nanocrystalline Fe-based ribbons for ferromagnetic/copper/ferromagnetic sensors exhibiting high magneto-impedance ratio. Longitudinal magneto-impedance reaches 400% at 60 kHz and longitudinal magneto-resistance increases up to 1300% around 200 kHz.

  9. Electromagnetism on anisotropic fractal media

    Science.gov (United States)

    Ostoja-Starzewski, Martin

    2013-04-01

    Basic equations of electromagnetic fields in anisotropic fractal media are obtained using a dimensional regularization approach. First, a formulation based on product measures is shown to satisfy the four basic identities of the vector calculus. This allows a generalization of the Green-Gauss and Stokes theorems as well as the charge conservation equation on anisotropic fractals. Then, pursuing the conceptual approach, we derive the Faraday and Ampère laws for such fractal media, which, along with two auxiliary null-divergence conditions, effectively give the modified Maxwell equations. Proceeding on a separate track, we employ a variational principle for electromagnetic fields, appropriately adapted to fractal media, so as to independently derive the same forms of these two laws. It is next found that the parabolic (for a conducting medium) and the hyperbolic (for a dielectric medium) equations involve modified gradient operators, while the Poynting vector has the same form as in the non-fractal case. Finally, Maxwell's electromagnetic stress tensor is reformulated for fractal systems. In all the cases, the derived equations for fractal media depend explicitly on fractal dimensions in three different directions and reduce to conventional forms for continuous media with Euclidean geometries upon setting these each of dimensions equal to unity.

  10. Observation of large low-field magnetoresistance in spinel cobaltite: A new half-metal

    KAUST Repository

    Li, Peng

    2015-12-10

    Low-field magnetoresistance is an effective and energy-saving way to use half-metallic materials in magnetic reading heads and magnetic random access memory. Common spin-polarized materials with low field magnetoresistance effect are perovskite-type manganese, cobalt, and molybdenum oxides. In this study, we report a new type of spinel cobaltite materials, self-assembled nanocrystalline NiCo2O4, which shows large low field magnetoresistance as large as –19.1% at 0.5 T and –50% at 9 T (2 K). The large low field magnetoresistance is attributed to the fast magnetization rotation of the core nanocrystals. The surface spin-glass is responsible for the observed weak saturation of magnetoresistance under high fields. Our calculation demonstrates that the half-metallicity of NiCo2O4 comes from the hopping eg electrons within the tetrahedral Co-atoms and the octahedral Ni-atoms. The discovery of large low-field magnetoresistance in simple spinel oxide NiCo2O4, a non-perovskite oxide, leads to an extended family of low-field magnetoresistance materials. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)

  11. ANISOTROPIC POLARIZATION TENSORS FOR ELLIPSES AND ELLIPSOIDS

    Institute of Scientific and Technical Information of China (English)

    Hyeonbae Kang; Kyoungsun Kim

    2007-01-01

    In this paper we present a systematic way of computing the polarization tensors,anisotropic as well as isotropic, based on the boundary integral method. We then use this method to compute the anisotropic polarization tensor for ellipses and ellipsoids. The computation reveals the pair of anisotropy and ellipses which produce the same polarization tensors.

  12. Anisotropic weak Hardy spaces and interpolation theorems

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In this paper, the authors establish the anisotropic weak Hardy spaces associated with very general discrete groups of dilations. Moreover, the atomic decomposition theorem of the anisotropic weak Hardy spaces is also given. As some applications of the above results, the authors prove some interpolation theorems and obtain the boundedness of the singular integral operators on these Hardy spaces.

  13. Characterization of anisotropic acoustic metamaterial slabs

    Science.gov (United States)

    Park, Jun Hyeong; Lee, Hyung Jin; Kim, Yoon Young

    2016-01-01

    In an anisotropic acoustic metamaterial, the off-diagonal components of its effective mass density tensor should be considered in order to describe the anisotropic behavior produced by arbitrarily shaped inclusions. However, few studies have been carried out to characterize anisotropic acoustic metamaterials. In this paper, we propose a method that uses the non-diagonal effective mass density tensor to determine the behavior of anisotropic acoustic metamaterials. Our method accurately evaluates the effective properties of anisotropic acoustic metamaterials by separately dealing with slabs made of single and multiple unit cells along the thickness direction. To determine the effective properties, the reflection and transmission coefficients of an acoustic metamaterial slab are calculated, and then the wave vectors inside of the slab are determined using these coefficients. The effective material properties are finally determined by utilizing the spatial dispersion relation of the anisotropic acoustic metamaterial. Since the dispersion relation of an anisotropic acoustic metamaterial is explicitly used, its effective properties can be easily determined by only using a limited number of normal and oblique plane wave incidences into a metamaterial slab, unlike existing approaches requiring a large number of wave incidences. The validity of the proposed method is verified by conducting wave simulations for anisotropic acoustic metamaterial slabs with Z-shaped elastic inclusions of tilted principal material axes.

  14. Multidisciplinary approach to cylindrical anisotropic metamaterials

    International Nuclear Information System (INIS)

    Anisotropic characteristics of cylindrically corrugated microstructures are analyzed in terms of their acoustic and electromagnetic (EM) behavior paying special attention to their differences and similarities. A simple analytical model has been developed using effective medium theory to understand the anisotropic features of both types of waves in terms of radial and angular components of the wave propagation velocity. The anisotropic constituent parameters have been obtained by measuring the resonances of cylindrical cavities, as well as from numerical simulations. This permits one to characterize propagation of acoustic and EM waves and to compare the fundamental anisotropic features generated by the corrugated effective medium. Anisotropic coefficients match closely in both physics fields but other relevant parameters show significant differences in the behavior of both types of waves. (paper)

  15. Efficient Wavefield Extrapolation In Anisotropic Media

    KAUST Repository

    Alkhalifah, Tariq

    2014-07-03

    Various examples are provided for wavefield extrapolation in anisotropic media. In one example, among others, a method includes determining an effective isotropic velocity model and extrapolating an equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield. The effective isotropic velocity model can be based upon a kinematic geometrical representation of an anisotropic, poroelastic or viscoelastic wavefield. Extrapolating the equivalent propagation can use isotopic, acoustic or elastic operators based upon the determined effective isotropic velocity model. In another example, non-transitory computer readable medium stores an application that, when executed by processing circuitry, causes the processing circuitry to determine the effective isotropic velocity model and extrapolate the equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield. In another example, a system includes processing circuitry and an application configured to cause the system to determine the effective isotropic velocity model and extrapolate the equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield.

  16. Designing Anisotropic Inflation with Form Fields

    CERN Document Server

    Ito, Asuka

    2015-01-01

    We study inflation with anisotropic hair induced by form fields. In four dimensions, the relevant form fields are gauge (one-form) fields and two-form fields. Assuming the exponential form of potential and gauge kinetic functions, we find new exact power-law solutions endowed with anisotropic hair. We also explore the phase space of anisotropic inflation and find fixed points corresponding to the exact power-law solutions. Moreover, we perform the stability analysis around the fixed points to reveal the structure of the phase space. It turns out that one of the fixed points becomes an attractor and others (if any) are saddle points. In particular, the one corresponding to anisotropic inflation becomes an attractor when it exists. We also argue that various anisotropic inflation models can be designed by choosing coupling constants.

  17. Designing anisotropic inflation with form fields

    Science.gov (United States)

    Ito, Asuka; Soda, Jiro

    2015-12-01

    We study inflation with anisotropic hair induced by form fields. In four dimensions, the relevant form fields are gauge (one-form) fields and two-form fields. Assuming the exponential form of potential and gauge kinetic functions, we find new exact power-law solutions endowed with anisotropic hair. We also explore the phase space of anisotropic inflation and find fixed points corresponding to the exact power-law solutions. Moreover, we perform the stability analysis around the fixed points to reveal the structure of the phase space. It turns out that one of the fixed points becomes an attractor and others (if any) are saddle points. In particular, the one corresponding to anisotropic inflation becomes an attractor when it exists. We also argue that various anisotropic inflation models can be designed by choosing coupling constants.

  18. Giant magnetoresistance due to magnetoelectric currents in Sr3Co2Fe24O41 hexaferrites

    International Nuclear Information System (INIS)

    The giant magnetoresistance and magnetoelectric (ME) effects of Z-type hexaferrite Sr3Co2Fe24O41 were investigated. The present experiments indicated that an induced magnetoelectric current in a transverse conical spin structure not only presented a nonlinear behavior with magnetic field and electric field but also depended upon a sweep rate of the applied magnetic field. More interestingly, the ME current induced magnetoresistance was measured, yielding a giant room temperature magnetoresistance of 32.2% measured at low magnetic fields (∼125 Oe). These results reveal great potential for emerging applications of multifunctional magnetoelectric ferrite materials.

  19. Effect of thermal-annealing on the magnetoresistance of manganite-based junctions

    Institute of Scientific and Technical Information of China (English)

    Xie Yan-Wu; Shen Bao-Gen; Sun Ji-Rong

    2008-01-01

    Thermal-annealing has been widely used in modulating the oxygen content of manganites. In this work, we have studied the effect of annealing on the transport properties and magnetoresistance of junctions composed of a La0.9Ca0.1MnO3+δ film and a Nb-doped SrTiO3 substrate. We have demonstrated that the magnetoresistance of junctions is strongly dependent on the annealing conditions: From the junction annealed-in-air to the junction annealed-in-vacuum, the magnetoresistance near 0-V bias can vary from ~-60% to~0. A possible mechanism accounting for this phenomenon is discussed.

  20. Magnetoresistive Properties of the Array of Iron Oxide Nanoparticles in Conducting Matrix

    Directory of Open Access Journals (Sweden)

    D.M. Kostyuk

    2015-12-01

    Full Text Available The results of the study of giant magnetoresistance in film systems Ag / array of ferrite nanoparticles / Ag and graphene / array of ferrite nanoparticles / graphene, which were formed by means of spin-coating or Langmuir-Blodgett technique, are represented. In systems of the first type during annealing the magnetoresistance value is changed within 3-20 %, and in the systems of the second type – 3 %. It is established that the optimum Ag film thickness, where magnetoresistance MR = 2 %, has a value of 5 nm.

  1. Large magnetoresistance in square-shaped hybrid magnet-semiconductor device

    International Nuclear Information System (INIS)

    We have obtained large positive and negative magnetoresistance in a square-shaped InAs two-dimensional electron gas in which the magnetoresistance is controlled by the magnetization of a ferromagnetic gate on the surface of the device. From an analysis based on a numerical calculation, the mechanism of this effect can be understood in terms of a spatially varying Hall conductivity and a geometrical effect of the device. This device has several practical advantages over the device with extraordinary magnetoresistance reported by Solin et al.

  2. Warm anisotropic inflationary universe model

    Energy Technology Data Exchange (ETDEWEB)

    Sharif, M.; Saleem, Rabia [University of the Punjab, Department of Mathematics, Lahore (Pakistan)

    2014-02-15

    This paper is devoted to the study of warm inflation using vector fields in the background of a locally rotationally symmetric Bianchi type I model of the universe. We formulate the field equations, and slow-roll and perturbation parameters (scalar and tensor power spectra as well as their spectral indices) in the slow-roll approximation. We evaluate all these parameters in terms of the directional Hubble parameter during the intermediate and logamediate inflationary regimes by taking the dissipation factor as a function of the scalar field as well as a constant. In each case, we calculate the observational parameter of interest, i.e., the tensor-scalar ratio in terms of the inflaton. The graphical behavior of these parameters shows that the anisotropic model is also compatible with WMAP7 and the Planck observational data. (orig.)

  3. Warm Anisotropic Inflationary Universe Model

    CERN Document Server

    Sharif, M

    2014-01-01

    This paper is devoted to study the warm inflation using vector fields in the background of locally rotationally symmetric Bianchi type I universe model. We formulate the field equations, slow-roll and perturbation parameters (scalar and tensor power spectra as well as their spectral indices) under slow-roll approximation. We evaluate all these parameters in terms of directional Hubble parameter during intermediate and logamediate inflationary regimes by taking the dissipation factor as a function of scalar field as well as a constant. In each case, we calculate the observational parameter of interest, i.e., tensor-scalar ratio in terms of inflation. The graphical behavior of these parameters shows that the anisotropic model is also compatible with WMAP7 and Planck observational data.

  4. I-Love-Q Anisotropically

    CERN Document Server

    Yagi, Kent

    2015-01-01

    Certain physical quantities that characterize neutron stars and quark stars (e.g. their mass, spin angular momentum and quadrupole moment) are interrelated in a way that is approximately insensitive to their internal structure. Such approximately universal relations are useful to break degeneracies in data analysis for future radio, X-ray and gravitational wave observations. Although the pressure inside compact stars is most likely nearly isotropic, certain scenarios have been put forth that suggest otherwise, for example due to phase transitions. We here investigate whether pressure anisotropy affects the approximate universal relations and whether it prevents their use in future observations. We achieve this by numerically constructing slowly-rotating and tidally-deformed, anisotropic, compact stars in General Relativity to third order in spin. We find that anisotropy affects the universal relations only weakly; the relations become less universal by a factor of 1.5-3 relative to the isotropic case, but rem...

  5. Gravitational Baryogenesis after Anisotropic Inflation

    CERN Document Server

    Fukushima, Mitsuhiro; Maeda, Kei-ichi

    2016-01-01

    The gravitational baryogensis may not generate a sufficient baryon asymmetry in the standard thermal history of the Universe when we take into account the gravitino problem. Hence it has been suggested that anisotropy of the Universe can enhance the generation of the baryon asymmetry through the increase of the time change of the Ricci scalar curvature. We study the gravitational baryogenesis in the presence of anisotropy, which is produced at the end of an anisotropic inflation. Although we confirm that the generated baryon asymmetry is enhanced compared with the original isotropic cosmological model, taking into account the constraint on the anisotropy by the recent CMB observations, we find that it is still difficult to obtain the observed baryon asymmetry only through the gravitational baryogenesis without suffering from the gravitino problem.

  6. Anisotropic invariance in minisuperspace models

    Science.gov (United States)

    Chagoya, Javier; Sabido, Miguel

    2016-06-01

    In this paper we introduce invariance under anisotropic transformations to cosmology. This invariance is one of the key ingredients of the theory of quantum gravity at a Lifshitz point put forward by Hořava. We find that this new symmetry in the minisuperspace introduces characteristics to the model that can be relevant in the ultraviolet regime. For example, by canonical quantization we find a Schrödinger-type equation which avoids the problem of frozen time in quantum cosmology. For simple cases we obtain solutions to this quantum equation in a Kantowski–Sachs (KS) minisuperspace. At the classical level, we study KS and Friedmann–Robertson–Walker cosmologies, obtaining modifications to the solutions of general relativity that can be relevant in the early Universe.

  7. Anisotropic microstructure near the sun

    International Nuclear Information System (INIS)

    Radio scattering observations provide a means of measuring a two-dimensional projection of the three-dimensional spatial spectrum of electron density, i.e., in the plane perpendicular to the line of sight. Earlier observations have shown that the microstructure at scales of the order of 10 km becomes highly field-aligned inside of 10 R· [Armstrong et al., 1990]. Earlier work has also shown that density fluctuations at scales larger than 1000 km have a Kolmogorov spectrum, whereas the smaller scale structure has a flatter spectrum and is considerably enhanced above the Kolmogorov ''background'' [Coles et al., 1991]. Here we present new observations made during 1990 and 1992. These confirm the earlier work, which was restricted to one source on a few days, but they suggest that the anisotropy changes abruptly near 6 R· which was not clear in the earlier data. The axial ratio measurements are shown on Figure 1 below. The new observations were made with a more uniform sampling of the spatial plane. They show that contours of constant correlation are elliptical. This is apparently inconsistent with the spatial correlation of the ISEE-3 magnetic field which shows a 'Maltese Cross' shape [Matthaeus et al., 1990]. However this inconsistency may be only apparent: the magnetic field and density correlations need not have the same shape; the scale of the magnetic field correlations is at least 4 orders of magnitude larger; they are much further from the sun; and they are point measurements whereas ours are path-integrated. We also made two simultaneous measurements, at 10 R·, of the anisotropy on scales of 200 to 4000 km. Significant anisotropy was seen on the smaller scales, but the larger scale structure was essentially isotropic. This suggests that the process responsible for the anisotropic microstructure is independent of the larger scale isotropic turbulence. It is then tempting to speculate that the damping of this anisotropic process inside of 6 R· contributes to

  8. The Anisotropic Geometrodynamics For Cosmology

    Science.gov (United States)

    Siparov, Sergey V.

    2009-05-01

    The classical geometrodynamics (GRT) and its modern features based on the use of the Fridman-Robertson-Walker type metrics are still unable to explain several important issues of extragalactic observations like flat rotation curves of the spiral galaxies, Tully-Fisher law, globular clusters behavior in comparisson to that of the stars belonging to the galactic plane etc. The chalenging problem of the Universe expansion acceleration stemming from the supernovae observations demands the existence of the repulsion forces which brings one to the choice between the cosmological constant and some quintessence. The popular objects of discussion are now still dark (matter and energy), nevertheless, they are supposed to correspond to more than 95% of the Universe which seems to be far from satisfactory. According to the equivalence principle we can not experimentally distinguish between the inertial forces and the gravitational ones. Since there exist the inertial forces depending on velocity (Coriolis), it seems plausible to explore the velocity dependent gravitational forces. From the mathematical point of view it means that we should use the anisotropic metric. It immediately turns out that the expression for the Einstein-Hilbert action changes in a natural way - contrary to the cases of f(R)-theories, additional scalar fields, arbitrary MOND functions etc.. We use the linear approximation for the metric and derive the generalized geodesics and the equation for the gravity force that contains not only the Newton-Einstein term. The relation between the obtained results and those of Lense-Thirring approach are discussed. The resulting anisotropic geometrodynamics includes all the results of the GRT and is used to give the explanation to the problems mentioned above. One of the impressive consequences is the possibility to explain the observed Hubble red shift not by the Doppler effect as usually but by the gravitational red shift originating from the metric anisotropy.

  9. Impurity-Assisted Tunneling Magnetoresistance under a Weak Magnetic Field

    Science.gov (United States)

    Txoperena, Oihana; Song, Yang; Qing, Lan; Gobbi, Marco; Hueso, Luis E.; Dery, Hanan; Casanova, Fèlix

    2014-10-01

    Injection of spins into semiconductors is essential for the integration of the spin functionality into conventional electronics. Insulating layers are often inserted between ferromagnetic metals and semiconductors for obtaining an efficient spin injection, and it is therefore crucial to distinguish between signatures of electrical spin injection and impurity-driven effects in the tunnel barrier. Here we demonstrate an impurity-assisted tunneling magnetoresistance effect in nonmagnetic-insulator-nonmagnetic and ferromagnetic-insulator-nonmagnetic tunnel barriers. In both cases, the effect reflects on-off switching of the tunneling current through impurity channels by the external magnetic field. The reported effect is universal for any impurity-assisted tunneling process and provides an alternative interpretation to a widely used technique that employs the same ferromagnetic electrode to inject and detect spin accumulation.

  10. Theory of spin Hall magnetoresistance (SMR) and related phenomena

    Science.gov (United States)

    Chen, Yan-Ting; Takahashi, Saburo; Nakayama, Hiroyasu; Althammer, Matthias; Goennenwein, Sebastian T. B.; Saitoh, Eiji; Bauer, Gerrit E. W.

    2016-03-01

    We review the so-called spin Hall magnetoresistance (SMR) in bilayers of a magnetic insulator and a metal, in which spin currents are generated in the normal metal by the spin Hall effect. The associated angular momentum transfer to the ferromagnetic layer and thereby the electrical resistance is modulated by the angle between the applied current and the magnetization direction. The SMR provides a convenient tool to non-invasively measure the magnetization direction and spin-transfer torque to an insulator. We introduce the minimal theoretical instruments to calculate the SMR, i.e. spin diffusion theory and quantum mechanical boundary conditions. This leads to a small set of parameters that can be fitted to experiments. We discuss the limitations of the theory as well as alternative mechanisms such as the ferromagnetic proximity effect and Rashba spin-orbit torques, and point out new developments.

  11. Studies of Colossal Magnetoresistive Oxides with Radioactive Isotopes

    CERN Multimedia

    2002-01-01

    We propose to study Colossal Magnetoresistive (CMR) oxides with several nuclear techniques, which use radioactive elements at ISOLDE. Our aim is to provide local and element selective information on some of the doping mechanisms that rule electronic interactions and magneto- resistance, in a complementary way to the use of conventional characterisation techniques. Three main topics are proposed: \\\\ \\\\ a) Studies of local [charge and] structural modifications in antiferromagnetic LaMnO$_{3+\\delta}$ and La$_{1-x}$R$_{x}$MnO$_{3}$ with R=Ca and Cd, doped ferromagnetic systems with competing interactions: - research on the lattice site and electronic characterisation of the doping element. \\\\ \\\\ b) Studies of self doped La$_{x}$R$_{1-x}$MnO$_{3+\\delta}$ systems, with oxygen and cation non- stoichiometry: - learning the role of defects in the optimisation of magnetoresestive properties. \\\\ \\\\ c) Probing the disorder and quenched random field effects in the vicinity of the charge or orbital Ordered/Ferromagnetic p...

  12. Semiconducting Organic Thin Film Devices with Large Magnetoresistance

    Science.gov (United States)

    Sheng, Y.; Mermer, Ö.; Veeraraghavan, G.; Nguyen, T. D.; Francis, T. L.; Wohlgenannt, M.

    2006-03-01

    A comprehensive study on a recently discovered, large magnetoresistance (MR) effect in sandwich devices comprised of nonmagnetic electrodes and organic thin films is performed. Devices were fabricated from pi-conjugated polymers and small molecular weight compounds in combination with different electrode materials, and characterized extensively at different voltages, temperatures, and at weak magnetic fields from DC up to 100 kHz in frequency. The MR effect shows only weak temperature dependence and is independent of the sign and direction of the magnetic field. The effect reaches up to 10% in a magnetic field of 10 mT at room temperature. To illustrate a potential application of the effect, we demonstrate a prototype organic LED (OLED) touchscreen using the MR effect. To the best of our knowledge, the discovered effect is not adequately described by any of the MR mechanisms known to date.

  13. Correlation of crystal quality and extreme magnetoresistance of WTe2

    Science.gov (United States)

    Ali, Mazhar N.; Schoop, Leslie; Xiong, Jun; Flynn, Steven; Gibson, Quinn; Hirschberger, Max; Ong, N. P.; Cava, R. J.

    2015-06-01

    High-quality single crystals of WTe2 were grown using a Te flux followed by a cleaning step involving self-vapor transport. The method is reproducible and yields consistently higher-quality single crystals than are typically obtained via halide-assisted vapor transport methods. Magnetoresistance (MR) values at 9 tesla and 2 kelvin as high as 1.75 million %, nearly an order of magnitude higher than previously reported for this material, were obtained on crystals with residual resistivity ratio (RRR) of approximately 1250. The MR follows a near B 2 law (B = 1.95(1)) and, assuming a semiclassical model, the average carrier mobility for the highest-quality crystal was found to be 167,000 \\text{cm}^2/\\text{Vs} at 2 K. A correlation of RRR, MR ratio and average carrier mobility (μ\\textit{avg}) is found with the cooling rate during the flux growth.

  14. Raman scattering investigation of large positive magnetoresistance material WTe2

    Science.gov (United States)

    Kong, W.-D.; Wu, S.-F.; Richard, P.; Lian, C.-S.; Wang, J.-T.; Yang, C.-L.; Shi, Y.-G.; Ding, H.

    2015-02-01

    We have performed polarized Raman scattering measurements on WTe2, for which an extremely large positive magnetoresistance has been reported recently. We observe 5 A1 phonon modes and 2 A2 phonon modes out of 33 Raman active modes, with frequencies in good accordance with first-principles calculations. The angular dependence of the intensity of the peaks observed is consistent with the Raman tensors of the C2v point group symmetry attributed to WTe2. Although the phonon spectra suggest neither strong electron-phonon nor spin-phonon coupling, the intensity of the A1 phonon mode at 160.6 cm-1 shows an unconventional decrease with temperature decreasing, for which the origin remains unclear.

  15. Raman scattering investigation of large positive magnetoresistance material WTe2

    International Nuclear Information System (INIS)

    We have performed polarized Raman scattering measurements on WTe2, for which an extremely large positive magnetoresistance has been reported recently. We observe 5 A1 phonon modes and 2 A2 phonon modes out of 33 Raman active modes, with frequencies in good accordance with first-principles calculations. The angular dependence of the intensity of the peaks observed is consistent with the Raman tensors of the C2v point group symmetry attributed to WTe2. Although the phonon spectra suggest neither strong electron-phonon nor spin-phonon coupling, the intensity of the A1 phonon mode at 160.6 cm−1 shows an unconventional decrease with temperature decreasing, for which the origin remains unclear

  16. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur

    2011-08-09

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.

  17. Magnetoresistance measurement of permalloy thin film rings with triangular fins

    International Nuclear Information System (INIS)

    Magnetization reversals in permalloy rings controlled by nucleation sites using triangular fins at the same side and diagonal with respect to the field direction are demonstrated by magnetoresistance measurement and micromagnetic simulation. In the ring with triangular fins at the same side, there exists two-step reversal from onion to flux-closure state (or vortex state) and then from flux-closure (or vortex state) to reverse onion state; in the ring with diagonal triangular fins, one-step reversal occurs directly from onion to reverse onion state. The reversal processes are repeatable and controllable in contrast to an ideal ring without triangular fins where one-step and two-step reversals occur randomly in sweep-up and sweep-down processes.

  18. Theory of spin Hall magnetoresistance (SMR) and related phenomena

    International Nuclear Information System (INIS)

    We review the so-called spin Hall magnetoresistance (SMR) in bilayers of a magnetic insulator and a metal, in which spin currents are generated in the normal metal by the spin Hall effect. The associated angular momentum transfer to the ferromagnetic layer and thereby the electrical resistance is modulated by the angle between the applied current and the magnetization direction. The SMR provides a convenient tool to non-invasively measure the magnetization direction and spin-transfer torque to an insulator. We introduce the minimal theoretical instruments to calculate the SMR, i.e. spin diffusion theory and quantum mechanical boundary conditions. This leads to a small set of parameters that can be fitted to experiments. We discuss the limitations of the theory as well as alternative mechanisms such as the ferromagnetic proximity effect and Rashba spin–orbit torques, and point out new developments. (topical review)

  19. Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions

    KAUST Repository

    Useinov, Arthur

    2010-05-03

    We present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Giant magnetoresistance of electrodeposited Cu–Co–Ni alloy films

    Indian Academy of Sciences (India)

    İ H Karahan; Ö F Bakkaloğlu; M Bedir

    2007-01-01

    Electrodeposition of CuCoNi alloys was performed in an acid–citrate medium. Nickel density parameter was varied in order to analyse its influence on the magnetoresistance. The structure and giant magneto- resistance (GMR) effect of CuCoNi alloys have been investigated. The maximum value for GMR ratio, at room temperature is 1% at a field of 12 kOe, and at 20 K is 2.1% at a field of 8.5 kOe for 3.1 Ni. The MR ratio of Cu100−−CoNi alloys first increases and then decreases monotonically with increasing Ni content. The GMR and its dependence on magnetic field and temperature were discussed.

  1. Structural and magnetoresistive properties of Co/Cu multilayers

    International Nuclear Information System (INIS)

    Co/Cu multilayers (ML) were thermally evaporated at very low deposition rates on Si substrates covered with buffer layers of different metals (Ag, Cu, In, Pb, Bi). Structural characterisation of samples was performed by X-ray reflectometry (XRR), X-ray diffraction (XRD) and atomic force microscopy (AFM). Magnetoresistance measurements were carried out at room temperature using a standard four-probe DC method with current in the plane of the sample. It seems that a choice of buffer type has no significant effect on the magnitude of GMR. Since the thickness of single layers is of similar magnitude as the interfacial roughness in samples we suggest that the observed small value of GMR effect can be attributed rather to the interruption of film continuity and creation of magnetic bridges between Co layers, resulting in direct ferromagnetic coupling of magnetic films

  2. Resistance transition assisted geometry enhanced magnetoresistance in semiconductors

    International Nuclear Information System (INIS)

    Magnetoresistance (MR) reported in some non-magnetic semiconductors (particularly silicon) has triggered considerable interest owing to the large magnitude of the effect. Here, we showed that MR in lightly doped n-Si can be significantly enhanced by introducing two diodes and proper design of the carrier path [Wan, Nature 477, 304 (2011)]. We designed a geometrical enhanced magnetoresistance (GEMR) device whose room-temperature MR ratio reaching 30% at 0.065 T and 20 000% at 1.2 T, respectively, approaching the performance of commercial MR devices. The mechanism of this GEMR is: the diodes help to define a high resistive state (HRS) and a low resistive state (LRS) in device by their openness and closeness, respectively. The ratio of apparent resistance between HRS and LRS is determined by geometry of silicon wafer and electrodes. Magnetic field could induce a transition from LRS to HRS by reshaping potential and current distribution among silicon wafer, resulting in a giant enhancement of intrinsic MR. We expect that this GEMR could be also realized in other semiconductors. The combination of high sensitivity to low magnetic fields and large high-field response should make this device concept attractive to the magnetic field sensing industry. Moreover, because this MR device is based on a conventional silicon/semiconductor platform, it should be possible to integrate this MR device with existing silicon/semiconductor devices and so aid the development of silicon/semiconductor-based magnetoelectronics. Also combining MR devices and semiconducting devices in a single Si/semiconductor chip may lead to some novel devices with hybrid function, such as electric-magnetic-photonic properties. Our work demonstrates that the charge property of semiconductor can be used in the magnetic sensing industry, where the spin properties of magnetic materials play a role traditionally

  3. The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z. H., E-mail: zhaohui@physics.umanitoba.ca; Bai, Lihui; Hu, C.-M. [Department of Physics and Astronomy, University of Manitoba, Winnipeg, R3T 2N2 Canada (Canada); Hemour, S.; Wu, K. [École Polytechnique de Montréal, Montréal, H3T 1J4 Canada (Canada); Fan, X. L.; Xue, D. S. [The Key Lab for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Houssameddine, D. [Everspin Technologies, 1347 N. Alma School Road, Chandler, Arizona 85224 (United States)

    2015-03-15

    The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ) was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.

  4. Magnetoresistance in Parent Pnictide AFe2As2(A = Sr, Ba)

    International Nuclear Information System (INIS)

    Magnetoresistances of SrFe2As2 and BaFe2As2 in the magnetic ordered state are studied. Positive magnetoresistance is observed in the magnetic fields H applied in the azimuthes of θ = 0° and 30° with respect to the c-axis. The magnetoresistance can reach 20% for SrFe2As2 and 12% for BaFe2As2 at H = 9 T with θ = 0° (H || c). Above the magnetic transition temperature, the magnetoresistance becomes negligible. The data in the magnetic ordered state could be described by a modified two-band galvanomagnetic model including the enhancement effect of the applied magnetic field on the spin-density-wave gap. The field enhanced spin-density-wave gaps for different types of carriers are different. Temperature dependencies of the fitting parameters are discussed

  5. Drastic Pressure Effect on the Extremely Large Magnetoresistance in WTe2 : Quantum Oscillation Study

    Science.gov (United States)

    Cai, P. L.; Hu, J.; He, L. P.; Pan, J.; Hong, X. C.; Zhang, Z.; Zhang, J.; Wei, J.; Mao, Z. Q.; Li, S. Y.

    2015-07-01

    The quantum oscillations of the magnetoresistance under ambient and high pressure have been studied for WTe2 single crystals, in which extremely large magnetoresistance was discovered recently. By analyzing the Shubnikov-de Haas oscillations, four Fermi surfaces are identified, and two of them are found to persist to high pressure. The sizes of these two pockets are comparable, but show increasing difference with pressure. At 0.3 K and in 14.5 T, the magnetoresistance decreases drastically from 1.25 ×105% under ambient pressure to 7.47 ×103% under 23.6 kbar, which is likely caused by the relative change of Fermi surfaces. These results support the scenario that the perfect balance between the electron and hole populations is the origin of the extremely large magnetoresistance in WTe2 .

  6. Magnetoresistance in Parent Pnictide AFe_2As_2(A=Sr, Ba)

    Institute of Scientific and Technical Information of China (English)

    ZHENG Ping; CHEN Gen-Fu; LI Zheng; HU Wan-Zheng; DONG Jing; LI Gang; WANG Nan-Lin; LUO Jian-Lin

    2009-01-01

    Magnetoresistances of SrFe_2 As_2 and BaFe_2 As_2 in the magnetic ordered state are studied.Positive magnetoresis-tance is observed in the magnetic fields H applied in the azimuthes foθ = 0°and 30°with respect to the c-axis.The magnetoresistance can reach 20% for SrFe_2 As_2 and 12% for BaFe_2As_2 at H = 9 T with θ= 0°(H||c).Above the magnetic transition temperature, the magnetoresistance becomes negligible.The data in the magnetic ordered state could be described by a modified two-band galvanomagnetic model including the enhancement effect of the applied magnetic field on the spin-density-wave gap.The field enhanced spin-density-wave gaps for different types of carriers are different.Temperature dependencies of the fitting parameters are discussed.

  7. The Hall effect and magnetoresistance of the high-temperature cuprate superconductors

    International Nuclear Information System (INIS)

    We show that underlying the unusual temperature dependence of RH is a Hall angle damping rate which varies as T2, in contrast with the linear-T dependence in the transport scattering rate. The effect of impurities on this rate is discussed. The dephasing rate for carriers in Bi 2201 is measured by low temperature magnetoresistance, and found to vary as the cube root of T from 0.4 to 20 K. Spin dependent effects in the magnetoresistance are discussed. (orig.)

  8. Temperature dependent spin transport properties of Platinum inferred from spin Hall magnetoresistance measurements

    OpenAIRE

    Meyer, Sibylle; Althammer, Matthias; Geprägs, Stephan; Opel, Matthias; Gross, Rudolf; Goennenwein, Sebastian T. B.

    2014-01-01

    We study the temperature dependence of the spin Hall magnetoresistance (SMR) in yttrium iron garnet/platinum hybrid structures via magnetization orientation dependent magnetoresistance measurements. Our experiments show a decrease of the SMR magnitude with decreasing temperature. Using the sensitivity of the SMR to the spin transport properties of the normal metal, we interpret our data in terms of a decrease of the spin Hall angle in platinum from 0.11 at room temperature to 0.075 at 10K, wh...

  9. Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

    OpenAIRE

    Schebaum, Oliver; Drewello, Volker; Auge, Alexander; Reiss, Günter; Münzenberg, Markus; Schuhmann, Henning; Seibt, Michael; Thomas, Andy

    2010-01-01

    Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing te...

  10. Insulator/metal phase transition and colossal magnetoresistance in holographic model

    CERN Document Server

    Cai, Rong-Gen

    2015-01-01

    We construct a gravity dual for insulator/metal phase transition and colossal magnetoresistance (CMR) effect found in some manganese oxides materials. The computations shows a remarkable magnetic-field-sensitive DC resistivity peak appearing at the Curie temperature, where an insulator/metal phase transition happens and the magnetoresistance is scaled with the square of field-induced magnetization. We find that metallic and insulating phases coexist below the Curie point and the relation with the electronic phase separation is discussed.

  11. A new algorithm for anisotropic solutions

    Indian Academy of Sciences (India)

    M Chaisi; S D Maharaj

    2006-02-01

    We establish a new algorithm that generates a new solution to the Einstein field equations, with an anisotropic matter distribution, from a seed isotropic solution. The new solution is expressed in terms of integrals of an isotropic gravitational potential; and the integration can be completed exactly for particular isotropic seed metrics. A good feature of our approach is that the anisotropic solutions necessarily have an isotropic limit. We find two examples of anisotropic solutions which generalise the isothermal sphere and the Schwarzschild interior sphere. Both examples are expressed in closed form involving elementary functions only.

  12. Anisotropic inflation in Gauss-Bonnet gravity

    CERN Document Server

    Lahiri, Sayantani

    2016-01-01

    We study anisotropic inflation with Gauss-Bonnet correction in presence of a massless vector field. In this scenario, exact anisotropic power-law inflation is realized when the inflaton potential, gauge coupling function and the Gauss-Bonnet coupling are exponential functions. We show that anisotropy becomes proportional to two slow-roll parameters of the theory and hence gets enhanced in presence of quadratic curvature corrections. The stability analysis reveals that anisotropic power-law solutions remain stable over a substantially large parameter region.

  13. Synthesis of cubic SrCoO3 single crystal and its anisotropic magnetic and transport properties

    International Nuclear Information System (INIS)

    A large-size single crystal of nearly stoichiometric SrCoO3 was prepared with a two-step method combining the floating-zone technique and subsequent high oxygen pressure treatment. SrCoO3 crystallizes in a cubic perovskite structure with space group Pm 3-bar m, and displays an itinerant ferromagnetic behavior with the Curie temperature of 305 K. The easy magnetization axis is found to be along the [111] direction, and the saturation moment is 2.5 μB/f.u., in accord with the picture of the intermediate spin state. The resistivity at low temperatures (T) is proportional to T2, indicative of the possible effect of orbital fluctuation in the intermediate spin ferromagnetic metallic state. Unusual anisotropic magnetoresistance is also observed and its possible origin is discussed.

  14. Large magnetoresistance induced by crystallographic defects in FexTaS2 single crystals

    Science.gov (United States)

    Chen, Chih-Wei; Morosan, Emilia; Morosan's group Team

    The search for the materials that show large magnetoresistance and the mechanisms that induce it remains challenging in both experimental and theoretical aspects. The giant magnetoresistance in one class of materials, ferromagnetic conductors, is generally attributed to the misalignments of magnetic moments, which cause spin disorder scattering. Recently, very large magnetoresistance (>60 %) was discovered in the ferromagnetic Fe-intercalated transition metal dichalcogenide, Fe0.28TaS2 [Phys. Rev. B 91, 054426(2015)]. The mechanism that led to this large magnetoresistance was suggested to be due to the deviation of Fe concentration from commensurate values (1/4 or 1/3), which caused magnetic moments' misalignments. Here we report a study of FexTaS2 crystals with x close to the commensurate values. Our results qualitatively demonstrate that crystallographic defects significantly affect magnetoresistance in FexTaS2. This provides a way to search for large magnetoresistance in more intercalated transition metal dichalcogenides. This work is supported by the Department of Defense PECASE.

  15. Variably saturated flow described with the anisotropic Lattice Boltzmann methods

    OpenAIRE

    Ginzburg, I.

    2006-01-01

    This paper addresses the numerical solution of highly nonlinear parabolic equations with Lattice Boltzmann techniques. They are first developed for generic advection and anisotropic dispersion equations (AADE). Collision configurations handle the anisotropic diffusion forms by using either anisotropic eigenvalue sets or anisotropic equilibrium functions. The coordinate transformation from the orthorhombic (rectangular) discretization grid to the cuboid computational grid is equivalen...

  16. A scanning probe microscope for magnetoresistive cantilevers utilizing a nested scanner design for large-area scans

    Directory of Open Access Journals (Sweden)

    Tobias Meier

    2015-02-01

    Full Text Available We describe an atomic force microscope (AFM for the characterization of self-sensing tunneling magnetoresistive (TMR cantilevers. Furthermore, we achieve a large scan-range with a nested scanner design of two independent piezo scanners: a small high resolution scanner with a scan range of 5 × 5 × 5 μm3 is mounted on a large-area scanner with a scan range of 800 × 800 × 35 μm3. In order to characterize TMR sensors on AFM cantilevers as deflection sensors, the AFM is equipped with a laser beam deflection setup to measure the deflection of the cantilevers independently. The instrument is based on a commercial AFM controller and capable to perform large-area scanning directly without stitching of images. Images obtained on different samples such as calibration standard, optical grating, EPROM chip, self-assembled monolayers and atomic step-edges of gold demonstrate the high stability of the nested scanner design and the performance of self-sensing TMR cantilevers.

  17. Magnetocardiography with GMR-based sensors

    Energy Technology Data Exchange (ETDEWEB)

    Pannetier-Lecoeur, M; Polovy, H; Sergeeva-Chollet, N; Cannies, G; Fermon, C [DSM/IRAMIS/SPEC- CNRS URA 2464, CEA Saclay, 91191 Gif sur Yvette Cedex France (France); Parkkonen, L, E-mail: myriam.lecoeur@cea.fr [Elekta Oy, 00530 Helsinki (Finland)

    2011-07-06

    We have developed a sensor based on the Giant Magneto-Resistive (GMR) effect, associated to a superconducting flux-to-field transformer, which allows femtotesla field detection in a wide range of frequencies [1]. Such sensors are good candidates for measurements of biomagnetic signals generated by the brain or the heart. Here we present Magneto-Cardiographic (MCG) recordings over the chest of healthy volunteers at 4K and 77K with these sensors in a magnetically shielded room. The sensitivity is now limited by the 1/f noise of the GMR element which appears below few kHz. We present a technique based on supercurrent switching which reduces this low frequency noise.

  18. Spatial interpolation approach based on IDW with anisotropic spatial structures

    Science.gov (United States)

    Li, Jia; Duan, Ping; Sheng, Yehua; Lv, Haiyang

    2015-12-01

    In many interpolation methods, with its simple interpolation principle, Inverse distance weighted (IDW) interpolation is one of the most common interpolation method. There are anisotropic spatial structures with actual geographical spatial phenomenon. When the IDW interpolation is used, anisotropic spatial structures should be considered. Geostatistical theory has a characteristics of exploring anisotropic spatial structures. In this paper, spatial interpolation approach based on IDW with anisotropic spatial structures is proposed. The DEM data is tested in this paper to prove reliability of the IDW interpolation considering anisotropic spatial structures. Experimental results show that IDW interpolation considering anisotropic spatial structures can improve interpolation precision when sampling data has anisotropic spatial structures feature.

  19. Thermal stability of Py/Cu and Co/Cu giant magnetoresistance (GMR) multilayer systems

    Energy Technology Data Exchange (ETDEWEB)

    Vovk, Vitaliy

    2007-07-01

    NiFe/Cu and Co/Cu multilayer systems have been studied regarding the mechanisms of thermal degradation of the giant magnetoresistance effect (GMR). The different thermodynamics of the studied systems results in different mechanisms of the GMR degradation as shown by highest resolution nanoanalysis using the three dimensional wide angle tomographic atom probe. According to the TAP analysis, GMR deterioration in Py/Cu system occurs due to the broadening of the layer interfaces observed at 250 C. In contrast, due to the strong demixing tendency, Co/Cu multilayers remain stable up to 450 C. At higher temperatures ferromagnetic bridging of the neighboring Co layers takes place leading to the GMR breakdown. In both Py/Cu and Co/Cu systems recrystallization is induced at 350-450 C, which is accompanied by a change in the crystallographic orientation from <111> to <100> wire texture. The reaction may be utilized to produce GMR sensor layers of remarkable thermal stability. Although the systems of interest are equivalent in respect of the observed phenomenon, the Ni{sub x}Fe{sub 1-x}/Cu system is chosen for a detailed analysis because it allows a precise control of the lattice constant by varying the Fe content in the Ni{sub x}Fe{sub 1-x} layer. It is shown that the crystallographic reorientation is triggered by the minimization of lattice mismatch elastic energy. Moreover, the counteraction between the elastic and interfacial energy minimizations exerts a critical influence on the recrystallization probability. (orig.)

  20. Theory of Compton scattering by anisotropic electrons

    OpenAIRE

    Poutanen, Juri; Vurm, Indrek

    2010-01-01

    Compton scattering plays an important role in various astrophysical objects such as accreting black holes and neutron stars, pulsars, and relativistic jets, clusters of galaxies as well as the early Universe. In most of the calculations it is assumed that the electrons have isotropic angular distribution in some frame. However, there are situations where the anisotropy may be significant due to the bulk motions, or anisotropic cooling by synchrotron radiation, or anisotropic source of seed so...

  1. Phase space analysis in anisotropic optical systems

    Science.gov (United States)

    Rivera, Ana Leonor; Chumakov, Sergey M.; Wolf, Kurt Bernardo

    1995-01-01

    From the minimal action principle follows the Hamilton equations of evolution for geometric optical rays in anisotropic media. As in classical mechanics of velocity-dependent potentials, the velocity and the canonical momentum are not parallel, but differ by an anisotropy vector potential, similar to that of linear electromagnetism. Descartes' well known diagram for refraction is generalized and a factorization theorem holds for interfaces between two anisotropic media.

  2. Anisotropic rectangular metric for polygonal surface remeshing

    KAUST Repository

    Pellenard, Bertrand

    2013-06-18

    We propose a new method for anisotropic polygonal surface remeshing. Our algorithm takes as input a surface triangle mesh. An anisotropic rectangular metric, defined at each triangle facet of the input mesh, is derived from both a user-specified normal-based tolerance error and the requirement to favor rectangle-shaped polygons. Our algorithm uses a greedy optimization procedure that adds, deletes and relocates generators so as to match two criteria related to partitioning and conformity.

  3. Rainbow metric from quantum gravity: anisotropic cosmology

    OpenAIRE

    Assanioussi, Mehdi; Dapor, Andrea

    2016-01-01

    In this paper we present a construction of effective cosmological models which describe the propagation of a massive quantum scalar field on a quantum anisotropic cosmological spacetime. Each obtained effective model is represented by a rainbow metric in which particles of distinct momenta propagate on different classical geometries. Our analysis shows that upon certain assumptions and conditions on the parameters determining such anisotropic models, we surprisingly obtain a unique deformatio...

  4. Anisotropic cosmological solutions in massive vector theories

    OpenAIRE

    Heisenberg, Lavinia; Kase, Ryotaro; Tsujikawa, Shinji

    2016-01-01

    In beyond-generalized Proca theories including the extension to theories higher than second order, we study the role of a spatial component $v$ of a massive vector field on the anisotropic cosmological background. We show that, as in the case of the isotropic cosmological background, there is no additional ghostly degrees of freedom associated with the Ostrogradski instability. In second-order generalized Proca theories we find the existence of anisotropic solutions on which the ratio between...

  5. Anisotropic Stars: Exact Solutions and Stability

    OpenAIRE

    Dev, Krsna; Gleiser, Marcelo

    2004-01-01

    I report on recent work concerning the existence and stability of self-gravitating spheres with anisotropic pressure. After presenting new exact solutions, Chandrasekhar's variational formalism for radial perturbations is generalized to anisotropic objects and applied to investigate their stability. It is shown that anisotropy can not only support stars of mass M and radius R with 2M/R > 8/9 and arbitrarily large surface redshifts, but that stable configurations exist for values of the adiaba...

  6. Anisotropic surface tension of buckled fluid membrane

    OpenAIRE

    Noguchi, Hiroshi

    2011-01-01

    Solid sheets and fluid membranes exhibit buckling under lateral compression. Here, it is revealed that fluid membranes have anisotropic buckling surface tension contrary to solid sheets. Surprisingly, the surface tension perpendicular to the buckling direction shows stronger dependence than that parallel to it. Our theoretical predictions are supported by numerical simulations of a meshless membrane model. This anisotropic tension can be used to measure the membrane bending rigidity. It is al...

  7. Highly anisotropic elements for acoustic pentamode applications.

    Science.gov (United States)

    Layman, Christopher N; Naify, Christina J; Martin, Theodore P; Calvo, David C; Orris, Gregory J

    2013-07-12

    Pentamode metamaterials are a class of acoustic metafluids that are characterized by a divergence free modified stress tensor. Such materials have an unconventional anisotropic stiffness and isotropic mass density, which allow themselves to mimic other fluid domains. Here we present a pentamode design formed by an oblique honeycomb lattice and producing customizable anisotropic properties. It is shown that anisotropy in the stiffness can exceed 3 orders of magnitude, and that it can be realistically tailored for transformation acoustic applications. PMID:23889408

  8. Anisotropic fluid spheres in general relativity

    International Nuclear Information System (INIS)

    A procedure is developed to find static solutions for anisotropic fluid spheres from known static solutions for perfect fluid spheres. The method is used to obtain four exact analytical solutions of Einstein's equations for spherically symmetric self-gravitating distribution of anisotropic matter. The solutions are matched to the Schwarzschild exterior metric. The physical features of one of the solutions are briefly discussed. Many previously known perfect fluid solutions are derived as particular cases. (author)

  9. On the anisotropic elastic properties of hydroxyapatite.

    Science.gov (United States)

    Katz, J. L.; Ukraincik, K.

    1971-01-01

    Experimental measurements of the isotropic elastic moduli on polycrystalline specimens of hydroxyapatite and fluorapatite are compared with elastic constants measured directly from single crystals of fluorapatite in order to derive a set of pseudo single crystal elastic constants for hydroxyapatite. The stiffness coefficients thus derived are given. The anisotropic and isotropic elastic properties are then computed and compared with similar properties derived from experimental observations of the anisotropic behavior of bone.

  10. Soft particles with anisotropic interactions

    Science.gov (United States)

    Schurtenberger, Peter

    Responsive colloids such as thermo- or pH-sensitive microgels are ideal model systems to investigate the relationship between the nature of interparticle interactions and the plethora of self-assembled structures that can form in colloidal suspensions. They allow for a variation of the form, strength and range of the interaction potential almost at will. While microgels have extensively been used as model systems to investigate various condensed matter problems such as glass formation, jamming or crystallization, they can also be used to study systems with anisotropic interactions. Here we show results from a systematic investigation of the influence of softness and anisotropy on the structural and dynamic properties of strongly interacting suspensions. We focus first on ionic microgels. Due to their large number of internal counterions they possess very large polarisabilities, and we can thus use external electrical ac fields to generate large dipolar contributions to the interparticle interaction potential. This leads to a number of new crystal phases, and we can trigger crystal-crystal phase transitions through the appropriate choice of the field strength. We then show that this approach can be extended to more complex particle shapes in an attempt to copy nature's well documented success in fabricating complex nanostructures such as virus shells via self assembly. European Research Council (ERC-339678-COMPASS).

  11. Transport theory in anisotropic media

    International Nuclear Information System (INIS)

    A theory of particle scattering in anisotropic media is developed. That is, a medium in which the microstructure causes the mean free paths of the particles to become dependent on their direction of motion with respect to some fixed axis. The equation which results is similar to the normal, one-speed Boltzmann transport equation but has cross-sections which are functions of direction. This equation is solved for arbitrary cross-sectional dependence on direction in plane geometry. Four distinct problems are considered: (1) the particle distribution arising from a plane source in an infinite medium, (2) the albedo problem and Milne problem for a half-space and the corresponding 'thick slab' transmission problem, (3) solution of the integral form of the Boltzmann equation for a special case of cross-sectional dependence which leads to results similar to the well-known rod model and (4) the energy spectrum of particles slowing down from a high energy source by elastic collisions. In each of these four problems the influence of the cross-section is seen to be significant in comparison with the conventional constant cross-section results, to which they revert in this limit. Some suggestions about physical applications of the results are made. (author)

  12. Anisotropic diffusion-limited aggregation.

    Science.gov (United States)

    Popescu, M N; Hentschel, H G E; Family, F

    2004-06-01

    Using stochastic conformal mappings, we study the effects of anisotropic perturbations on diffusion-limited aggregation (DLA) in two dimensions. The harmonic measure of the growth probability for DLA can be conformally mapped onto a constant measure on a unit circle. Here we map m preferred directions for growth to a distribution on the unit circle, which is a periodic function with m peaks in [-pi,pi) such that the angular width sigma of the peak defines the "strength" of anisotropy kappa= sigma(-1) along any of the m chosen directions. The two parameters (m,kappa) map out a parameter space of perturbations that allows a continuous transition from DLA (for small enough kappa ) to m needlelike fingers as kappa--> infinity. We show that at fixed m the effective fractal dimension of the clusters D(m,kappa) obtained from mass-radius scaling decreases with increasing kappa from D(DLA) approximately 1.71 to a value bounded from below by D(min) = 3 / 2. Scaling arguments suggest a specific form for the dependence of the fractal dimension D(m,kappa) on kappa for large kappa which compares favorably with numerical results. PMID:15244564

  13. Anisotropic pressure and hyperons in neutron stars

    CERN Document Server

    Sulaksono, A

    2014-01-01

    We study the effects of anisotropic pressure on properties of the neutron stars with hyperons inside its core within the framework of extended relativistic mean field. It is found that the main effects of anisotropic pressure on neutron star matter is to increase the stiffness of the equation of state, which compensates for the softening of the EOS due to the hyperons. The maximum mass and redshift predictions of anisotropic neutron star with hyperonic core are quite compatible with the result of recent observational constraints if we use the parameter of anisotropic pressure model $h \\le 0.8$[1] and $\\Lambda \\le -1.15$ [2]. The radius of the corresponding neutron star at $M$=1.4 $M_\\odot$ is more than 13 km, while the effect of anisotropic pressure on the minimum mass of neutron star is insignificant. Furthermore, due to the anisotropic pressure in the neutron star, the maximum mass limit of higher than 2.1 $M_\\odot$ cannot rule out the presence of hyperons in the neutron star core.

  14. Ultrahigh-Q modes in anisotropic 2D photonic crystal

    International Nuclear Information System (INIS)

    In this work, we design a two-dimensional photonic crystal cavity made with a substrate of an anisotropic material. We consider triangular lattice photonic crystal made from air holes in tellurium. The cavity itself is then created by three missing holes in the centre. Using the three-dimensional finite-difference time-domain simulation and optimization of the geometrical parameters and the symmetric displacement of the edge air holes on the quality factor, the cavity’s structural parameters yield an ultrahigh-Q mode cavity with quality factor Q = 2.95 × 1011 for a filling factor r/a = 0.45 and lateral displacement of 10 nm. This shows great enhancement compared with previous studies in which silicon material has been used. The designed structure can be helpful in a number of applications associated with photonic crystal cavities, including quantum information processing, filters, and nanoscale sensors. (paper)

  15. Photothermal method for absorption measurements in anisotropic crystals

    Science.gov (United States)

    Stubenvoll, M.; Schäfer, B.; Mann, K.; Novak, O.

    2016-02-01

    A measurement system for quantitative determination of both surface and bulk contributions to the photo-thermal absorption has been extended to anisotropic optical media. It bases upon a highly sensitive Hartmann-Shack wavefront sensor, accomplishing precise on-line monitoring of wavefront deformations of a collimated test beam transmitted perpendicularly through the laser-irradiated side of a cuboid sample. Caused by the temperature dependence of the refractive index as well as thermal expansion, the initially plane wavefront of the test beam is distorted. Sign and magnitude depend on index change and expansion. By comparison with thermal theory, a calibration of the measurement is possible, yielding a quantitative absolute measure of bulk and surface absorption losses from the transient wavefront distortion. Results for KTP and BBO single crystals are presented.

  16. Taste sensor; Mikaku sensor

    Energy Technology Data Exchange (ETDEWEB)

    Toko, K. [Kyushu University, Fukuoka (Japan)

    1998-03-05

    This paper introduces a taste sensor having a lipid/polymer membrane to work as a receptor of taste substances. The paper describes the following matters: this sensor uses a hollow polyvinyl chloride rod filled with KCl aqueous solution, and placed with silver and silver chloride wires, whose cross section is affixed with a lipid/polymer membrane as a lipid membrane electrode to identify taste from seven or eight kinds of response patterns of electric potential output from the lipid/polymer membrane; measurements of different substances presenting acidic taste, salty taste, bitter taste, sweet taste and flavor by using this sensor identified clearly each taste (similar response is shown to a similar taste even if the substances are different); different responses are indicated on different brands of beers; from the result of measuring a great variety of mineral waters, a possibility was suggested that this taste sensor could be used for water quality monitoring sensors; and application of this taste sensor may be expected as a maturation control sensor for Japanese sake (wine) and miso (bean paste) manufacturing. 2 figs., 1 tab.

  17. Viable chemical approach for patterning nanoscale magnetoresistive random access memory

    International Nuclear Information System (INIS)

    A reactive ion etching process with alternating Cl2 and H2 exposures has been shown to chemically etch CoFe film that is an integral component in magnetoresistive random access memory (MRAM). Starting with systematic thermodynamic calculations assessing various chemistries and reaction pathways leading to the highest possible vapor pressure of the etch products reactions, the potential chemical combinations were verified by etch rate investigation and surface chemistry analysis in plasma treated CoFe films. An ∼20% enhancement in etch rate was observed with the alternating use of Cl2 and H2 plasmas, in comparison with the use of only Cl2 plasma. This chemical combination was effective in removing metal chloride layers, thus maintaining the desired magnetic properties of the CoFe films. Scanning electron microscopy equipped with energy-dispersive x-ray spectroscopy showed visually and spectroscopically that the metal chloride layers generated by Cl2 plasma were eliminated with H2 plasma to yield a clean etch profile. This work suggests that the selected chemistries can be used to etch magnetic metal alloys with a smooth etch profile and this general strategy can be applied to design chemically based etch processes to enable the fabrication of highly integrated nanoscale MRAM devices

  18. Extraordinary magnetoresistance in semiconductor/metal hybrids: A review

    KAUST Repository

    Sun, J.

    2013-02-13

    The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device\\'s performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed. 2013 by the authors.

  19. Viable chemical approach for patterning nanoscale magnetoresistive random access memory

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Taeseung; Kim, Younghee; Chen, Jack Kun-Chieh; Chang, Jane P., E-mail: jpchang@seas.ucla.edu [Department of Chemical and Biomolecular Engineering, University of California Los Angeles, Los Angeles, California 90095 (United States)

    2015-03-15

    A reactive ion etching process with alternating Cl{sub 2} and H{sub 2} exposures has been shown to chemically etch CoFe film that is an integral component in magnetoresistive random access memory (MRAM). Starting with systematic thermodynamic calculations assessing various chemistries and reaction pathways leading to the highest possible vapor pressure of the etch products reactions, the potential chemical combinations were verified by etch rate investigation and surface chemistry analysis in plasma treated CoFe films. An ∼20% enhancement in etch rate was observed with the alternating use of Cl{sub 2} and H{sub 2} plasmas, in comparison with the use of only Cl{sub 2} plasma. This chemical combination was effective in removing metal chloride layers, thus maintaining the desired magnetic properties of the CoFe films. Scanning electron microscopy equipped with energy-dispersive x-ray spectroscopy showed visually and spectroscopically that the metal chloride layers generated by Cl{sub 2} plasma were eliminated with H{sub 2} plasma to yield a clean etch profile. This work suggests that the selected chemistries can be used to etch magnetic metal alloys with a smooth etch profile and this general strategy can be applied to design chemically based etch processes to enable the fabrication of highly integrated nanoscale MRAM devices.

  20. Energy scales and magnetoresistance at a quantum critical point

    International Nuclear Information System (INIS)

    The magnetoresistance (MR) of CeCoIn5 is notably different from that in many conventional metals. We show that a pronounced crossover from negative to positive MR at elevated temperatures and fixed magnetic fields is determined by the scaling behavior of quasiparticle effective mass. At a quantum critical point (QCP) this dependence generates kinks (crossover points from fast to slow growth) in thermodynamic characteristics (like specific heat, magnetization, etc.) at some temperatures when a strongly correlated electron system transits from the magnetic field induced Landau-Fermi liquid (LFL) regime to the non-Fermi liquid (NFL) one taking place at rising temperatures. We show that the above kink-like peculiarity separates two distinct energy scales in QCP vicinity - low temperature LFL scale and high temperature one related to NFL regime. Our comprehensive theoretical analysis of experimental data permits to reveal for the first time new MR and kinks scaling behavior as well as to identify the physical reasons for above energy scales

  1. A new theory of doped manganites exhibiting colossal magnetoresistance

    Indian Academy of Sciences (India)

    H R Krishnamurthy

    2005-06-01

    Rare earth manganites doped with alkaline earths, namely Re1-AMnO3, exhibit colossal magnetoresistance, metal insulator transitions, competing magnetic, orbital and charge ordering, and many other interesting but poorly understood phenomena. In this article I outline our recent theory based on the idea that in the presence of strong Jahn–Teller, Coulomb and Hund’s couplings present in these materials, the low-energy electronic states dynamically reorganize themselves into two sets: one set (ℓ) which are polaronic, i.e., localized and accompanied by large local lattice distortion, and another (b) which are non-polaronic and band-like. The coexistence of the radically different ℓ and states, and the sensitive dependence of their relative energies and occupation upon doping , temperature , magnetic field , etc., underlies the unique effects seen in manganites. I present results from strong correlation calculations using dynamical mean-field theory and simulations on a new 2-fluid model which accord with a variety of observations.

  2. Silicon Membranes for Smart Silicon Sensors .

    Directory of Open Access Journals (Sweden)

    S. Kal

    1998-10-01

    Full Text Available The development of smart Si sensors which combine active circuitry and sensor on the same chip, has drawn attention in terms of miniaturisation and cost-effectiveness of microsensors. Interest in micromachining of Si to fabricate membranes derives from the need for inexpensive and more versatile sensors. This paper reports the results on fabrication of Si membranes by anisotropic etching of Si in EDP solution. Good quality membranes of 10 Nanometer thickness were fabricated. Infrared detector based on thermopile structure was realised on 50 Nanometer thick Si membrane using polysilicon and Al junctions. Thermo-emf generated at 150 °c is nearly 8 mv.

  3. Anisotropic thermal conductivity of magnetic fluids

    Institute of Scientific and Technical Information of China (English)

    Xiaopeng Fang; Yimin Xuan; Qiang Li

    2009-01-01

    Considering the forces acting on the particles and the motion of the particles, this study uses a numerical simulation to investigate the three-dimensional microstructure of the magnetic fluids in the presence of an external magnetic field. A method is proposed for predicting the anisotropic thermal conductivity of magnetic fluids. By introducing an anisotropic structure parameter which characterizes the non-uniform distribution of particles suspended in the magnetic fluids, the traditional Maxwell formula is modified and extended to calculate anisotropic thermal conductivity of the magnetic fluids. The results show that in the presence of an external magnetic field the magnetic nanoparticles form chainlike clusters along the direction of the external magnetic field, which leads to the fact that the thermal conduc-tivity of the magnetic fluid along the chain direction is bigger than that along other directions. The thermal conductivity of the magnetic fluids presents an anisotropic feature. With the increase of the magnetic field strength the chainlike clusters in the magnetic fluid appear to be more obvious, so that the anisotropic feature of heat conduction in the fluids becomes more evident.

  4. Effective medium theory for anisotropic metamaterials

    KAUST Repository

    Zhang, Xiujuan

    2015-01-20

    Materials with anisotropic material parameters can be utilized to fabricate many fascinating devices, such as hyperlenses, metasolids, and one-way waveguides. In this study, we analyze the effects of geometric anisotropy on a two-dimensional metamaterial composed of a rectangular array of elliptic cylinders and derive an effective medium theory for such a metamaterial. We find that it is possible to obtain a closed-form analytical solution for the anisotropic effective medium parameters, provided the aspect ratio of the lattice and the eccentricity of the elliptic cylinder satisfy certain conditions. The derived effective medium theory not only recovers the well-known Maxwell-Garnett results in the quasi-static regime, but is also valid beyond the long-wavelength limit, where the wavelength in the host medium is comparable to the size of the lattice so that previous anisotropic effective medium theories fail. Such an advance greatly broadens the applicable realm of the effective medium theory and introduces many possibilities in the design of structures with desired anisotropic material characteristics. A real sample of a recently theoretically proposed anisotropic medium, with a near-zero index to control the flux, is achieved using the derived effective medium theory, and control of the electromagnetic waves in the sample is clearly demonstrated.

  5. General Expression of Elastic Tensor for Anisotropic Materials

    Institute of Scientific and Technical Information of China (English)

    HUANG Bo

    2005-01-01

    In order to formulate a general expression of elastic tensor for anisotropic materials, a method of tensor derivative is used for determining relationship between fourth-order elastic tensor and second-order structure tensor that has satisfied material symmetrical conditions. From this general expression of elastic tensor, specific expressions of elastic tensor for different anisotropic materials, such as isotropic materials, transverse isotropic materials and orthogonal-anisotropic materials, can be deduced. This expression underlies the scalar description of anisotropic factors, which are used for classifying and analyzing anisotropic materials. Cubic crystals are analyzed macroscopically by means of the general expression and anisotropic factor.

  6. Coexistence of magneto-resistance and -capacitance tunability in Sm2Ga2Fe2O9

    OpenAIRE

    Wu, Ye

    2016-01-01

    We propose that charge gradient resulting in the coexisting magneto-resistance and-capacitance tunability in material systems. We have experimentally observed coexisting of tunable magneto-resistance and -capacitance in Sm2Ga2Fe2O9. Our model fits well with the experimental result.

  7. Quasiparticle anisotropic hydrodynamics for central collisions

    CERN Document Server

    Alqahtani, Mubarak; Strickland, Michael

    2016-01-01

    We use quasiparticle anisotropic hydrodynamics to study an azimuthally-symmetric boost-invariant quark-gluon plasma including the effects of both shear and bulk viscosities. In quasiparticle anisotropic hydrodynamics, a single finite-temperature quasiparticle mass is introduced and fit to the lattice data in order to implement a realistic equation of state. We compare results obtained using the quasiparticle method with the standard method of imposing the equation of state in anisotropic hydrodynamics and viscous hydrodynamics. Using these three methods, we extract the primordial particle spectra, total number of charged particles, and average transverse momentum for various values of the shear viscosity to entropy density ratio eta/s. We find that the three methods agree well for small shear viscosity to entropy density ratio, eta/s, but differ at large eta/s. We find, in particular, that when using standard viscous hydrodynamics, the bulk-viscous correction can drive the primordial particle spectra negative...

  8. Theory of Compton scattering by anisotropic electrons

    CERN Document Server

    Poutanen, Juri

    2010-01-01

    Compton scattering plays an important role in various astrophysical objects such as accreting black holes and neutron stars, pulsars, and relativistic jets, clusters of galaxies as well as the early Universe. In most of the calculations it is assumed that the electrons have isotropic angular distribution in some frame. However, there are situations where the anisotropy may be significant due to the bulk motions, or anisotropic cooling by synchrotron radiation, or anisotropic source of seed soft photons. We develop here an analytical theory of Compton scattering by anisotropic distribution of electrons that can simplify significantly the calculations. Assuming that the electron angular distribution can be represented by a second order polynomial over cosine of some angle (dipole and quadrupole anisotropy), we integrate the exact Klein-Nishina cross-section over the angles. Exact analytical and approximate formulae valid for any photon and electron energies are derived for the redistribution functions describin...

  9. Anisotropic pseudopotential for polarized dilute quantum gases

    International Nuclear Information System (INIS)

    An anisotropic pseudopotential arising in the context of collisions of two particles polarized by an external field is rigorously derived and its properties are investigated. Such a low-energy pseudopotential may be useful in describing collective properties of dilute quantum gases, such as molecules polarized by an electric field or metastable 3P2 atoms polarized by a magnetic field. The pseudopotential is expressed in terms of the reactance (K) matrix and derivatives of the Dirac δ function. In most applications, it may be represented as a sum of a traditional spherically symmetric contact term and an anisotropic part. The former contribution may be parametrized by a generalized scattering length. The anisotropic part of the pseudopotential may be characterized by the off-diagonal scattering length for dipolar interactions and off-diagonal scattering volume for quadrupolar interactions. The two-body matrix element of the pseudopotential in a basis of plane waves is also derived

  10. Anisotropic inflation in the Finsler spacetime

    International Nuclear Information System (INIS)

    We suggest the universe is Finslerian in the stage of inflation. The Finslerian background spacetime breaks rotational symmetry and induces parity violation. The primordial power spectrum is given for the quantum fluctuation of the inflation field. It depends not only on the magnitude of the wavenumber but also on the preferred direction. We derive the gravitational field equations in the perturbed Finslerian background spacetime, and we obtain a conserved quantity outside the Hubble horizon. The angular correlation coefficients are presented in our anisotropic inflation model. The parity violation feature of Finslerian background spacetime requires that the anisotropic effect only appears in the angular correlation coefficients if l' = l + 1. The numerical results of the angular correlation coefficients are given describing the anisotropic effect. (orig.)

  11. Obtuse triangle suppression in anisotropic meshes

    KAUST Repository

    Sun, Feng

    2011-12-01

    Anisotropic triangle meshes are used for efficient approximation of surfaces and flow data in finite element analysis, and in these applications it is desirable to have as few obtuse triangles as possible to reduce the discretization error. We present a variational approach to suppressing obtuse triangles in anisotropic meshes. Specifically, we introduce a hexagonal Minkowski metric, which is sensitive to triangle orientation, to give a new formulation of the centroidal Voronoi tessellation (CVT) method. Furthermore, we prove several relevant properties of the CVT method with the newly introduced metric. Experiments show that our algorithm produces anisotropic meshes with much fewer obtuse triangles than using existing methods while maintaining mesh anisotropy. © 2011 Elsevier B.V. All rights reserved.

  12. Micromechanics and dislocation theory in anisotropic elasticity

    CERN Document Server

    Lazar, Markus

    2016-01-01

    In this work, dislocation master-equations valid for anisotropic materials are derived in terms of kernel functions using the framework of micromechanics. The second derivative of the anisotropic Green tensor is calculated in the sense of generalized functions and decomposed into a sum of a $1/R^3$-term plus a Dirac $\\delta$-term. The first term is the so-called "Barnett-term" and the latter is important for the definition of the Green tensor as fundamental solution of the Navier equation. In addition, all dislocation master-equations are specified for Somigliana dislocations with application to 3D crack modeling. Also the interior Eshelby tensor for a spherical inclusion in an anisotropic material is derived as line integral over the unit circle.

  13. Asymmetric Composite Nanoparticles with Anisotropic Surface Functionalities

    Directory of Open Access Journals (Sweden)

    Donglu Shi

    2009-01-01

    Full Text Available Asymmetric inorganic/organic composite nanoparticles with anisotropic surface functionalities represent a new approach for creating smart materials, requiring the selective introduction of chemical groups to dual components of composite, respectively. Here, we report the synthesis of snowman-like asymmetric silica/polystyrene heterostructure with anisotropic functionalities via a chemical method, creating nanostructure possibly offering two-sided biologic accessibility through the chemical groups. Carboxyl group was introduced to polystyrene component of the snowman-like composites by miniemulsion polymerization of monomer on local surface of silica particles. Moreover, amino group was then grafted to remained silica surface through facile surface modification of the composite nanoparticles. The asymmetric shape of these composites was confirmed by TEM characterization. Moreover, characteristics of anisotropic surface functionalities were indicated by Zeta potential measurement and confocal laser microscopy after being labeled with fluorescent dyes. This structure could find potential use as carriers for biological applications.

  14. Anisotropic inflation in the Finsler spacetime

    Energy Technology Data Exchange (ETDEWEB)

    Li, Xin [Chongqing University, Department of Physics, Chongqing (China); Institute of Theoretical Physics, Chinese Academy of Sciences, State Key Laboratory of Theoretical Physics, Beijing (China); Wang, Sai [Institute of Theoretical Physics, Chinese Academy of Sciences, State Key Laboratory of Theoretical Physics, Beijing (China); Chang, Zhe [Institute of Theoretical Physics, Chinese Academy of Sciences, State Key Laboratory of Theoretical Physics, Beijing (China); Institute of High Energy Physics, Chinese Academy of Sciences, Beijing (China)

    2015-06-15

    We suggest the universe is Finslerian in the stage of inflation. The Finslerian background spacetime breaks rotational symmetry and induces parity violation. The primordial power spectrum is given for the quantum fluctuation of the inflation field. It depends not only on the magnitude of the wavenumber but also on the preferred direction. We derive the gravitational field equations in the perturbed Finslerian background spacetime, and we obtain a conserved quantity outside the Hubble horizon. The angular correlation coefficients are presented in our anisotropic inflation model. The parity violation feature of Finslerian background spacetime requires that the anisotropic effect only appears in the angular correlation coefficients if l' = l + 1. The numerical results of the angular correlation coefficients are given describing the anisotropic effect. (orig.)

  15. Anomalous Hall effect and magnetoresistance behavior in Co/Pd1−xAgx multilayers

    KAUST Repository

    Guo, Z. B.

    2013-02-13

    In this paper, we report anomalous Hall effect (AHE) correlated with the magnetoresistance behavior in [Co/Pd1-xAg x]n multilayers. For the multilayers with n = 6, the increase in Ag content from x = 0 to 0.52 induces the change in AHE sign from negative surface scattering-dominated AHE to positive interface scattering-dominated AHE, which is accompanied with the transition from anisotropy magnetoresistance (AMR) dominated transport to giant magnetoresistance (GMR) dominated transport. For n = 80, scaling analysis with Rs ∝ρ xx γ yields γ ∼ 3.44 for x = 0.52 which presents GMR-type transport, in contrast to γ ∼ 5.7 for x = 0 which presents AMR-type transport. © 2013 American Institute of Physics.

  16. Hydrodynamic theory of thermoelectric transport and negative magnetoresistance in Weyl semimetals

    CERN Document Server

    Lucas, Andrew; Sachdev, Subir

    2016-01-01

    We present a minimal hydrodynamic formalism for thermoelectric transport in Weyl semimetals where the electron-electron scattering time is faster than the electron-impurity scattering time. Our model consists of relativistic fluids at each Weyl node, coupled together by perturbatively small inter-valley scattering, and long-range Coulomb interactions. We analytically compute all thermoelectric transport coefficients in the limit of perturbatively weak disorder and magnetic field, and confirm Onsager reciprocity and positive-definiteness of the conductivity matrix. Three distinct anomalous relaxation times govern negative magnetoresistance in the thermoelectric transport coefficients: while negative electrical magnetoresistance is governed by the standard chiral anomaly, negative thermal magnetoresistance is governed by a distinct gauge-gravitational anomaly. All of the hydrodynamic coefficients in our formalism may be computed for a given microscopic model of a Weyl semimetal via memory matrix techniques.

  17. Electric field dependence of junction magnetoresistance in magnetite/semiconductor heterostructure at room temperature

    International Nuclear Information System (INIS)

    We have fabricated Fe3O4/p-Si heterojunction using pulsed laser deposition technique and explored its electro-magnetic transport properties. The heterojunction exhibits backward rectifying property at all temperatures, and appraisal of giant junction magnetoresistance (JMR) is observed at room temperature (RT). Conspicuously, the variation and sign change of JMR as a function of electric field is observed at RT. The backward rectifying behavior of the device is ascribed to the highly doped p-type (p++) semiconducting nature of Fe3O4, and the origin of electric field (voltage) dependence of magnetoresistance is explained proposing electronic band diagram of Fe3O4/SiO2/p-Si heterojunction. This interesting result may have importance to integrate Si-based magnetoresistance sources in multifunctional spintronic devices

  18. Giant amplification of tunnel magnetoresistance in a molecular junction: Molecular spin-valve transistor

    International Nuclear Information System (INIS)

    Amplification of tunnel magnetoresistance by gate field in a molecular junction is the most important requirement for the development of a molecular spin valve transistor. Herein, we predict a giant amplification of tunnel magnetoresistance in a single molecular spin valve junction, which consists of Ru-bis-terpyridine molecule as a spacer between two ferromagnetic nickel contacts. Based on the first-principles quantum transport approach, we show that a modest change in the gate field that is experimentally accessible can lead to a substantial amplification (320%) of tunnel magnetoresistance. The origin of such large amplification is attributed to the spin dependent modification of orbitals at the molecule-lead interface and the resultant Stark effect induced shift in channel position with respect to the Fermi energy

  19. Giant amplification of tunnel magnetoresistance in a molecular junction: Molecular spin-valve transistor

    Energy Technology Data Exchange (ETDEWEB)

    Dhungana, Kamal B.; Pati, Ranjit, E-mail: patir@mtu.edu [Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States)

    2014-04-21

    Amplification of tunnel magnetoresistance by gate field in a molecular junction is the most important requirement for the development of a molecular spin valve transistor. Herein, we predict a giant amplification of tunnel magnetoresistance in a single molecular spin valve junction, which consists of Ru-bis-terpyridine molecule as a spacer between two ferromagnetic nickel contacts. Based on the first-principles quantum transport approach, we show that a modest change in the gate field that is experimentally accessible can lead to a substantial amplification (320%) of tunnel magnetoresistance. The origin of such large amplification is attributed to the spin dependent modification of orbitals at the molecule-lead interface and the resultant Stark effect induced shift in channel position with respect to the Fermi energy.

  20. Efficient spin injection and giant magnetoresistance in Fe / MoS 2 / Fe junctions

    KAUST Repository

    Dolui, Kapildeb

    2014-07-02

    We demonstrate giant magnetoresistance in Fe/MoS2/Fe junctions by means of ab initio transport calculations. We show that junctions incorporating either a monolayer or a bilayer of MoS2 are metallic and that Fe acts as an efficient spin injector into MoS2 with an efficiency of about 45%. This is the result of the strong coupling between the Fe and S atoms at the interface. For junctions of greater thickness, a maximum magnetoresistance of ∼300% is obtained, which remains robust with the applied bias as long as transport is in the tunneling limit. A general recipe for improving the magnetoresistance in spin valves incorporating layered transition metal dichalcogenides is proposed. © 2014 American Physical Society.

  1. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

    KAUST Repository

    Zhang, Kun

    2015-01-01

    Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

  2. Giant magnetoresistance and magnetothermopower in single-crystal Bi1-xSbx wires

    International Nuclear Information System (INIS)

    A significant increase in the transverse magnetoresistance and magnetothermopower in single-crystal Bi1-xSbx wires obtained by liquid phase casting in the temperature range 80-100 K is found. A shift to the range of lower (T 100 K) temperatures leads to the suppression of the giant increase in the magnetoresistance. The effect is interpreted in terms of the substance transition to the 'gapless state'. According to the theoretical analysis of, the disappearance of the energy gap between the bands Eg is accompanied by a significant increase in mobility that leads to a sharp increase in the magnetoresistance; herein, the gapless state corresponds to the mobility maximum. While moving from the state with Eg = 0, the mobility decrease. (authors)

  3. Giant magnetoresistance and spin-filtering effects in zigzag graphene and hexagonal boron nitride based heterojunction

    International Nuclear Information System (INIS)

    The spin-dependent electronic transport properties of heterojunction constructed by bare zigzag graphene nanoribbon and hexagonal boron nitride nanoribbon are investigated by the non-equilibrium Green's function method in combination with the density functional theory. The results show that the giant magnetoresistance effect can be realized in the heterojunction, and the magnetoresistance ratio can reach to 106. Moreover, it is found that the heterojunction is a good spin-filtering device with nearly 100% spin filtering efficiency at a wide bias voltage region in both ferromagnetic and antiferromagnetic magnetic configurations. - Highlights: • The spin-dependent electronic transport of ZGNR and boron nitride based heterojunction. • The magnetoresistance ratio can reach to 106. • The perfect spin-filtering device with nearly 100% spin filtering efficiency

  4. Size effects under a strong magnetic field: transverse magnetoresistance of thin gold films deposited on mica

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, Raul C [Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago (Chile); HenrIquez, Ricardo [Departamento de Fisica, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago (Chile); GarcIa, Juan Pablo [Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago (Chile); Moncada, Ana MarIa [Departamento de Fisica, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago (Chile); Espinosa, Andres [Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago (Chile); Robles, Marcelo [Departamento de Ciencias de la Construccion, Universidad Tecnologica Metropolitana, Dieciocho 390, Santiago (Chile); Kremer, German [Departamento de Fisica, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago (Chile); Moraga, Luis [Departamento de Fisica, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago (Chile); Cancino, Simon [Departamento de Fisica, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago (Chile); Morales, Jose Roberto [Departamento de Fisica, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago (Chile); RamIrez, Adan [Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago (Chile); Oyarzun, Simon; Suarez, Marco Antonio; Chen, David [Departamento de Fisica, Facultad de Ciencias Fisicas y Matematicas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago (Chile); Zumelzu, Ernesto; Lizama, Claudio [Facultad de Ciencias de la IngenierIa, Universidad Austral, General Lagos 2086, Valdivia (Chile)

    2006-04-05

    We report measurements of transverse magnetoresistance where the signal can be attributed to electron-surface scattering, together with measurements of the surface roughness of the films on an atomic scale. The measurements were performed with a scanning tunnelling microscope (STM) on four thin gold films evaporated onto mica. The magnetoresistance exhibits a marked thickness dependence: at 4 K and 9 T is about 5% for the thinner (69 nm) film, and about 14% for the thicker (185 nm) film. Sondheimer's theory provides an accurate description of the temperature dependence of the resistivity, but predicts a magnetoresistance one order of magnitude smaller than that observed at 4 K. Calecki's theory in the limit of small roughness correlation length, predicts a resistivity two orders of magnitude larger than observed at 4 K.

  5. Size effects under a strong magnetic field: transverse magnetoresistance of thin gold films deposited on mica

    International Nuclear Information System (INIS)

    We report measurements of transverse magnetoresistance where the signal can be attributed to electron-surface scattering, together with measurements of the surface roughness of the films on an atomic scale. The measurements were performed with a scanning tunnelling microscope (STM) on four thin gold films evaporated onto mica. The magnetoresistance exhibits a marked thickness dependence: at 4 K and 9 T is about 5% for the thinner (69 nm) film, and about 14% for the thicker (185 nm) film. Sondheimer's theory provides an accurate description of the temperature dependence of the resistivity, but predicts a magnetoresistance one order of magnitude smaller than that observed at 4 K. Calecki's theory in the limit of small roughness correlation length, predicts a resistivity two orders of magnitude larger than observed at 4 K

  6. Electric field dependence of junction magnetoresistance in magnetite/semiconductor heterostructure at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Aireddy, H.; Bhaumik, S.; Das, A. K., E-mail: amal@phy.iitkgp.ernet.in [Department of Physics, Indian Institute of Technology, Kharagpur 721 302 (India)

    2015-12-07

    We have fabricated Fe{sub 3}O{sub 4}/p-Si heterojunction using pulsed laser deposition technique and explored its electro-magnetic transport properties. The heterojunction exhibits backward rectifying property at all temperatures, and appraisal of giant junction magnetoresistance (JMR) is observed at room temperature (RT). Conspicuously, the variation and sign change of JMR as a function of electric field is observed at RT. The backward rectifying behavior of the device is ascribed to the highly doped p-type (p{sup ++}) semiconducting nature of Fe{sub 3}O{sub 4}, and the origin of electric field (voltage) dependence of magnetoresistance is explained proposing electronic band diagram of Fe{sub 3}O{sub 4}/SiO{sub 2}/p-Si heterojunction. This interesting result may have importance to integrate Si-based magnetoresistance sources in multifunctional spintronic devices.

  7. Bouncing Anisotropic Universes with Varying Constants

    CERN Document Server

    Barrow, John D

    2013-01-01

    We examine the evolution of a closed, homogeneous and anisotropic cosmology subject to a variation of the fine structure 'constant', \\alpha, within the context of the theory introduced by Bekenstein, Sandvik, Barrow and Magueijo, which generalises Maxwell's equations and general relativity. The variation of \\alpha permits an effective ghost scalar field, whose negative energy density becomes dominant at small length scales, leading to a bouncing cosmology. A thermodynamically motivated coupling which describes energy exchange between the effective ghost field and the radiation field leads to an expanding, isotropizing sequence of bounces. In the absence of entropy production we also find solutions with stable anisotropic oscillations around a static universe.

  8. One-Dimensional Anisotropic Band Gap Structure

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The band gap structure of one-dimensional anisotropic photonic crystal has been studied by means of the transfer matrix formalism. From the analytic expressions and numeric calculations we see some general characteristics of the band gap structure of anisotropic photonic crystals, each band separates into two branches and the two branches react to polarization sensitively. In the practical case of oblique incidence, gaps move towards high frequency when the angle of incidence increases. Under some special conditions, the two branches become degenerate again.

  9. Anisotropic Stars: Exact Solutions and Stability

    CERN Document Server

    Dev, K; Dev, Krsna; Gleiser, Marcelo

    2004-01-01

    I report on recent work concerning the existence and stability of self-gravitating spheres with anisotropic pressure. After presenting new exact solutions, Chandrasekhar's variational formalism for radial perturbations is generalized to anisotropic objects and applied to investigate their stability. It is shown that anisotropy can not only support stars of mass M and radius R with 2M/R > 8/9 and arbitrarily large surface redshifts, but that stable configurations exist for values of the adiabatic index smaller than the corresponding isotropic value.

  10. Evolution of multidimensional flat anisotropic cosmological models

    International Nuclear Information System (INIS)

    We study the dynamics of a flat multidimensional anisotropic cosmological model filled with an anisotropic fluidlike medium. By an appropriate choice of variables, the dynamical equations reduce to a two-dimensional dynamical system. We present a detailed analysis of the time evolution of this system and the conditions of the existence of spacetime singularities. We investigate the conditions under which violent, exponential, and power-law inflation is possible. We show that dimensional reduction cannot proceed by anti-inflation (rapid contraction of internal space). Our model indicates that it is very difficult to achieve dimensional reduction by classical means

  11. CAVITATION BIFURCATION FOR COMPRESSIBLE ANISOTROPIC HYPERELASTIC MATERIALS

    Institute of Scientific and Technical Information of China (English)

    ChengChangjun; RenJiusheng

    2004-01-01

    The effect of material anisotropy on the bifurcation for void tormation in anisotropic compressible hyperelastic materials is examined. Numerical solutions are obtained in an anisotropic sphere, whose material is transversely isotropic in the radial direction. It is shown that the bifurcation may occur either to the right or to the left, depending on the degree of material anisotropy. The deformation and stress contribution in the sphere before cavitation are different from those after cavitation. The stability of solutions is discussed through a comparison of energy.

  12. Relativistic Solutions of Anisotropic Compact Objects

    CERN Document Server

    Paul, Bikash Chandra

    2016-01-01

    We present a class of new relativistic solutions with anisotropic fluid for compact stars in hydrostatic equilibrium. The interior space-time geometry considered here for compact objects are described by parameters namely, $\\lambda$, $k$, $A$, $R$ and $n$. The values of the geometrical parameters are determined here for obtaining a class of physically viable stellar models. The energy-density, radial pressure and tangential pressure are finite and positive inside the anisotropic stars. Considering some stars of known mass we present stellar models which describe compact astrophysical objects with nuclear density.

  13. Anisotropic nanomaterials preparation, properties, and applications

    CERN Document Server

    Li, Quan

    2015-01-01

    In this book anisotropic one-dimensional and two-dimensional nanoscale building blocks and their assembly into fascinating and qualitatively new functional structures embracing both hard and soft components are explained. Contributions from leading experts regarding important aspects like synthesis, assembly, properties and applications of the above materials are compiled into a reference book. The anisotropy, i.e. the direction-dependent physical properties, of materials is fascinating and elegant and has sparked the quest for anisotropic materials with useful properties. With such a curiosi

  14. Resistivity plateau and extreme magnetoresistance in LaSb

    Science.gov (United States)

    Tafti, F. F.; Gibson, Q. D.; Kushwaha, S. K.; Haldolaarachchige, N.; Cava, R. J.

    2016-03-01

    Time reversal symmetry (TRS) protects the metallic surface modes of topological insulators (TIs). The transport signature of such surface states is a plateau that arrests the exponential divergence of the insulating bulk with decreasing temperature. This universal behaviour is observed in all TI candidates ranging from Bi2Te2Se to SmB6. Recently, extreme magnetoresistance (XMR) has been reported in several topological semimetals which exhibit TI universal resistivity behaviour only when breaking time reversal symmetry, a regime where TIs theoretically cease to exist. Among these materials, TaAs and NbP are nominated as Weyl semimetals owing to their lack of inversion symmetry, Cd3As2 is known as a Dirac semimetal owing to its linear band crossing at the Fermi level, and WTe2 is termed a resonant compensated semimetal owing to its perfect electron-hole symmetry. Here we introduce LaSb, a simple rock-salt structure material that lacks broken inversion symmetry, perfect linear band crossing, and perfect electron-hole symmetry yet exhibits all the exotic field-induced behaviours of these more complex semimetals. It shows a field-induced universal TI resistivity with a plateau at roughly 15 K, ultrahigh mobility of carriers in the plateau region, quantum oscillations with the angle dependence of a two-dimensional Fermi surface, and XMR of about one million percent at 9 T. Owing to its structural simplicity, LaSb represents an ideal model system to formulate a theoretical understanding of the exotic consequences of breaking time reversal symmetry in topological semimetals.

  15. Study of the YBa2Cu3O-7-δ superconductor application as a low magnetic field sensor

    International Nuclear Information System (INIS)

    It has been proposed in the literature a new regime for high critical temperature superconductors labeled as thermally activated flux flow (TAFF). This regime presents a state in which vortex dynamic exhibit a ohmic behavior. The resistivity in this regime is proportional to the applied magnetic field for small current densities. Materials showing this behavior have high disordering and present semiconductor behavior in normal state with broad transition temperature. In this work is presented a systematic study of the magnetoresistance as a function of the applied magnetic field for polycrystalline samples with several thickness. Results of X ray diffraction, resistivity as a function of the temperature, I-V characteristic curves and magnetoresistance are showed. Finally is proposed a calibration curve of the magnetoresistance as a function of the magnetic field, that show the possibility of its use as magnetic field sensor. (author)

  16. Strongly anisotropic and complex magnetic behavior in EuRhGe{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Bednarchuk, Oleksandr; Kaczorowski, Dariusz, E-mail: D.Kaczorowski@int.pan.wroc.pl

    2015-10-15

    Single crystals of EuRhGe{sub 3} were studied by means of magnetic susceptibility, magnetization, heat capacity, resistivity and magnetoresistance measurements, performed in wide ranges of temperature and magnetic field strength. The compound was characterized as a Curie–Weiss paramagnet, due to divalent Eu ions, that orders antiferromagnetically at T{sub N} = 11.3 K. In the ordered state, EuRhGe{sub 3} exhibits strong magnetic anisotropy. The magnetic moments are probably nearly confined within the ab plane of the tetragonal crystallographic unit cell, and the magnetic propagation vector is likely perpendicular to this plane. The bulk thermodynamic and transport data concordantly suggest that in zero magnetic field the magnetic structure of EuRhGe{sub 3} is incommensurate with the chemical one and bears an amplitude-modulated character. In external magnetic field applied within the easy magnetization plane, two other magnetic structures were detected, each of them having an antiferromagnetic nature. - Highlights: • High-quality single crystals of EuRhGe{sub 3} were prepared. • Low-temperature physical behavior was studied along the main crystallographic directions. • Magnetic phase diagrams for B || ab and B || c were derived • EuRhGe{sub 3} was found highly anisotropic despite L = 0 electronic ground state. • As many as three distinct AFM phases were evidenced for B || ab.

  17. Anisotropic quantum transport in a network of vertically aligned graphene sheets

    International Nuclear Information System (INIS)

    Novel anisotropic quantum transport was observed in a network of vertically aligned graphene sheets (VAGSs), which can be regarded as composed of plenty of quasi-parallel, nearly intrinsic, freestanding monolayers of graphene. When a magnetic field was perpendicular to most graphene sheets, magnetoresistance (MR) curves showed a weak localization (WL) effect at low field and a maximum value at a critical field ascribed to diffusive boundary scattering. While the magnetic field was parallel to the graphene sheets, the MR maximum disappeared and exhibited a transition from WL to weak antilocalization (WAL) with increasing temperature and magnetic field. Edges as atomically sharp defects are the main elastic and inelastic intervalley scattering sources, and inelastic scattering is ascribed to electron–electron intervalley scattering in the ballistic regime. This is the first time simultaneously observing WL, WAL and diffusive boundary scattering in such a macroscopic three-dimensional graphene system. These indicate the VAGS network is a robust platform for the study of the intrinsic physical properties of graphene. (paper)

  18. Large magnetoresistance of paracyclophane-based molecular tunnel junctions: A first-principles study

    Energy Technology Data Exchange (ETDEWEB)

    Tao, L. L.; Liang, S. H.; Liu, D. P.; Han, X. F., E-mail: xfhan@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2013-12-07

    We report a theoretical study of magnetoresistance and spin-polarized transport of a series of paracyclophane-based molecular tunnel junctions. We predict that the molecular tunnel junction using [2.2]-paracyclophane barrier has the desired low resistance area product in combination with high magnetoresistance ratio. In addition, we find the spin-polarized conductance decreases exponentially with increasing the molecular length, indicating a nonresonant tunneling mechanism. In particular, the characteristic decay constant can be theoretically evaluated from the complex band structure of periodic paracyclophane molecule. The spin-polarized transport mechanism is systematically analyzed.

  19. Large magnetoresistance of paracyclophane-based molecular tunnel junctions: A first-principles study

    International Nuclear Information System (INIS)

    We report a theoretical study of magnetoresistance and spin-polarized transport of a series of paracyclophane-based molecular tunnel junctions. We predict that the molecular tunnel junction using [2.2]-paracyclophane barrier has the desired low resistance area product in combination with high magnetoresistance ratio. In addition, we find the spin-polarized conductance decreases exponentially with increasing the molecular length, indicating a nonresonant tunneling mechanism. In particular, the characteristic decay constant can be theoretically evaluated from the complex band structure of periodic paracyclophane molecule. The spin-polarized transport mechanism is systematically analyzed

  20. Magnetoresistance and upper critical magnetic field of UBe13 under pressure

    International Nuclear Information System (INIS)

    We have investigated the effects of pressure on the magnetoresistance and the upper critical magnetic field of the heavy electron compound UBe13. Both the superconducting transition temperature and the upper critical field decrease under hydrostatic pressure. The low-temperature magnetoresistance remains large and negative under pressure. The temperature region over which the resistivity has a T2 temperature dependence increases with both magnetic field and with pressure. At a fixed magnetic field, the coefficient of the T2 term in the resistivity decreases strongly with pressure. UBe13 is found to have a pressure independent intrinsic residual resistivity of 18 μΩ-cm

  1. Tunneling magnetoresistance dependence on the temperature in a ferromagnetic Zener diode

    Energy Technology Data Exchange (ETDEWEB)

    Comesana, E; Aldegunde, M; GarcIa-Loureiro, A, E-mail: enrique.comesana@usc.e [Departamento de Electronica e Computacion, Universidade de Santiago de Compostela, 15782 Santiago de Compostela (Spain)

    2009-11-15

    In the present work we focus on the study of the temperature dependence of the tunnelling current in a ferromagnetic Zener diode. We predict the tunneling magnetoresistance dependence on the temperature. Large doping concentrations lead to magnetic semiconductors with Curie temperature T{sub C} near or over room temperature and this will facilitate the introduction of new devices that make use of the ferromagnetism effects. According to our calculations the tunneling magnetoresistance has the form TMR {proportional_to} (T{sup n}{sub C}-T{sup n}).

  2. Temperature dependent spin transport properties of platinum inferred from spin Hall magnetoresistance measurements

    International Nuclear Information System (INIS)

    We study the temperature dependence of the spin Hall magnetoresistance (SMR) in yttrium iron garnet/platinum hybrid structures via magnetization orientation dependent magnetoresistance measurements. Our experiments show a decrease of the SMR magnitude with decreasing temperature. Using the sensitivity of the SMR to the spin transport properties of the normal metal, we interpret our data in terms of a decrease of the spin Hall angle in platinum from 0.11 at room temperature to 0.075 at 10 K, while the spin diffusion length and the spin mixing conductance of the ferrimagnetic insulator/normal metal interface remain almost constant.

  3. Temperature dependent spin transport properties of platinum inferred from spin Hall magnetoresistance measurements

    Energy Technology Data Exchange (ETDEWEB)

    Meyer, Sibylle, E-mail: sibylle.meyer@wmi.badw-muenchen.de; Althammer, Matthias; Geprägs, Stephan; Opel, Matthias; Goennenwein, Sebastian T. B. [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching (Germany); Gross, Rudolf [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching (Germany); Physik-Department, Technische Universität München, 85748 Garching (Germany)

    2014-06-16

    We study the temperature dependence of the spin Hall magnetoresistance (SMR) in yttrium iron garnet/platinum hybrid structures via magnetization orientation dependent magnetoresistance measurements. Our experiments show a decrease of the SMR magnitude with decreasing temperature. Using the sensitivity of the SMR to the spin transport properties of the normal metal, we interpret our data in terms of a decrease of the spin Hall angle in platinum from 0.11 at room temperature to 0.075 at 10 K, while the spin diffusion length and the spin mixing conductance of the ferrimagnetic insulator/normal metal interface remain almost constant.

  4. Magnetoresistance in an Asymmetric GaMnAs Resonant Tunneling Diode

    OpenAIRE

    Likovich, Edward Michael; Russell, Kasey Joe; Yi, Wei; Narayanamurti, Venkatesh; Ku, Keh-Chiang; Zhu, Meng; Samarth, Nitin

    2009-01-01

    In a GaMnAs/AlGaAs resonant tunneling diode (RTD) structure, we observe that both the magnitude and polarity of magnetoresistance are bias dependent when tunneling from a three-dimensional GaMnAs layer through a two-dimensional GaMnAs quantum well. This magnetoresistance behavior results from a shift of negative differential resistance features to higher bias as the relative alignment of the GaMnAs layer magnetizations is changed from parallel to antiparallel. Our observations agree with rece...

  5. Magnetic configuration dependence of magnetoresistance in a Fe-porphyrin-like carbon nanotube spintronic device

    International Nuclear Information System (INIS)

    By using nonequilibrium Green's functions in combination with the density functional theory, we investigate the spin-dependent transport properties in a Fe-porphyrin-like carbon nanotube spintronic device. The results show that magnetoresistance ratio is strongly dependent on the magnetic configuration of the Fe-porphyrin-like carbon nanotube. Under the application of the external magnetic field, the magnetoresistance ratio of the device can be increased from about 19% to about 1020% by tuning the magnetic configuration in the device. Our results confirm that the magnetic configuration is a key factor for obtaining a high-performance spintronic device

  6. Anisotropic Nanoantenna-Based Magnetoplasmonic Crystals for Highly Enhanced and Tunable Magneto-Optical Activity.

    Science.gov (United States)

    Maccaferri, Nicolò; Bergamini, Luca; Pancaldi, Matteo; Schmidt, Mikolaj K; Kataja, Mikko; Dijken, Sebastiaan van; Zabala, Nerea; Aizpurua, Javier; Vavassori, Paolo

    2016-04-13

    We present a novel concept of a magnetically tunable plasmonic crystal based on the excitation of Fano lattice surface modes in periodic arrays of magnetic and optically anisotropic nanoantennas. We show how coherent diffractive far-field coupling between elliptical nickel nanoantennas is governed by the two in-plane, orthogonal and spectrally detuned plasmonic responses of the individual building block, one directly induced by the incident radiation and the other induced by the application of an external magnetic field. The consequent excitation of magnetic field-induced Fano lattice surface modes leads to highly tunable and amplified magneto-optical effects as compared to a continuous film or metasurfaces made of disordered noninteracting magnetoplasmonic anisotropic nanoantennas. The concepts presented here can be exploited to design novel magnetoplasmonic sensors based on coupled localized plasmonic resonances, and nanoscale metamaterials for precise control and magnetically driven tunability of light polarization states. PMID:26967047

  7. Efficient Fruit Defect Detection and Glare removal Algorithm by anisotropic diffusion and 2D Gabor filter

    CERN Document Server

    Katyal, Vini

    2012-01-01

    This paper focuses on fruit defect detection and glare removal using morphological operations, Glare removal can be considered as an important preprocessing step as uneven lighting may introduce it in images, which hamper the results produced through segmentation by Gabor filters .The problem of glare in images is very pronounced sometimes due to the unusual reflectance from the camera sensor or stray light entering, this method counteracts this problem and makes the defect detection much more pronounced. Anisotropic diffusion is used for further smoothening of the images and removing the high energy regions in an image for better defect detection and makes the defects more retrievable. Our algorithm is robust and scalable the employability of a particular mask for glare removal has been checked and proved useful for counteracting.this problem, anisotropic diffusion further enhances the defects with its use further Optimal Gabor filter at various orientations is used for defect detection.

  8. Albedo and constant source problems for extremely anisotropic scattering

    International Nuclear Information System (INIS)

    The half-space albedo problem and the constant source problem have been solved for a combination of the linearly anisotropic scattering and Inoenue's scattering functions. The linear transport equation for extremely anisotropic scattering kernel can be converted into an equivalent equation with a linearly anisotropic scattering kernel and the modified FN method can be used for albedo calculations. (orig.)

  9. Nucleation in suspensions of anisotropic colloids

    NARCIS (Netherlands)

    Schilling, T.; Frenkel, D.

    2005-01-01

    We report Monte Carlo studies of liquid crystal nucleation in two types of anisotropic colloidal systems: hard rods and hard ellipsoids. In both cases we find that nucleation pathways differ strongly from the pathways in systems of spherical particles. Short hard rods show an effect of self-poisonin

  10. Spin Wave Theory of Strongly Anisotropic Magnets

    DEFF Research Database (Denmark)

    Lindgård, Per-Anker

    1977-01-01

    A strong anisotropy gives rise to a non-spherical precession of the spins with different amplitudes in the x and y directions. The highly anharmonic exchange interaction thereby becomes effectively anisotropic. The possibility of detecting a genuine two-ion anisotropy is discussed, and comments are...

  11. Silicon as an anisotropic mechanical material

    DEFF Research Database (Denmark)

    Thomsen, Erik Vilain; Reck, Kasper; Skands, Gustav Erik;

    2014-01-01

    While silicon is an anisotropic material it is often in literature treated as an isotropic material when it comes to plate calculations. This leads to considerable errors in the calculated deflection. To overcome this problem, we present an in-depth analysis of the bending behavior of thin...

  12. A generalized anisotropic deformation formulation for geomaterials

    Science.gov (United States)

    Lei, Z.; Rougier, Esteban; Knight, E. E.; Munjiza, A.; Viswanathan, H.

    2016-04-01

    In this paper, the combined finite-discrete element method (FDEM) has been applied to analyze the deformation of anisotropic geomaterials. In the most general case geomaterials are both non-homogeneous and non-isotropic. With the aim of addressing anisotropic material problems, improved 2D FDEM formulations have been developed. These formulations feature the unified hypo-hyper elastic approach combined with a multiplicative decomposition-based selective integration for volumetric and shear deformation modes. This approach is significantly different from the co-rotational formulations typically encountered in finite element codes. Unlike the co-rotational formulation, the multiplicative decomposition-based formulation naturally decomposes deformation into translation, rotation, plastic stretches, elastic stretches, volumetric stretches, shear stretches, etc. This approach can be implemented for a whole family of finite elements from solids to shells and membranes. This novel 2D FDEM based material formulation was designed in such a way that the anisotropic properties of the solid can be specified in a cell by cell basis, therefore enabling the user to seed these anisotropic properties following any type of spatial variation, for example, following a curvilinear path. In addition, due to the selective integration, there are no problems with volumetric or shear locking with any type of finite element employed.

  13. SPICE compatible behavioural modelling of resistive sensors

    International Nuclear Information System (INIS)

    In this paper, a modelling technique for anisotropic magneto-resistors (AMRs) and piezo-resistors has been developed. These models are then used to model sensors using such elements. The motivation is to develop a platform which will help in the analysis of different performance parameters of such sensors and optimally design electronic systems for such sensor applications. Non-idealistic behaviour such as temperature and nonlinearity, hysteresis, mismatch, noise, etc have been considered while developing the model. The proposed technique helps us to study each of these non-idealities individually as well as understand the holistic sensor response. Root-cause analysis can, thus, be performed. Model parameters are derived from different product specifications and various characterization reports. The sensor's response predicted from the model is compared with the performance of these products. Response of the model is seen to closely follow the response of the actual product. (paper)

  14. SPICE compatible behavioural modelling of resistive sensors

    Science.gov (United States)

    Nandi, Prajit; Sahu, Debashis; Sundar Dhar, Anindya; Das, Soumen

    2014-05-01

    In this paper, a modelling technique for anisotropic magneto-resistors (AMRs) and piezo-resistors has been developed. These models are then used to model sensors using such elements. The motivation is to develop a platform which will help in the analysis of different performance parameters of such sensors and optimally design electronic systems for such sensor applications. Non-idealistic behaviour such as temperature and nonlinearity, hysteresis, mismatch, noise, etc have been considered while developing the model. The proposed technique helps us to study each of these non-idealities individually as well as understand the holistic sensor response. Root-cause analysis can, thus, be performed. Model parameters are derived from different product specifications and various characterization reports. The sensor's response predicted from the model is compared with the performance of these products. Response of the model is seen to closely follow the response of the actual product.

  15. Ambient Sensors

    OpenAIRE

    Börner, Dirk; Specht, Marcus

    2014-01-01

    This software sketches comprise two custom-built ambient sensors, i.e. a noise and a movement sensor. Both sensors measure an ambient value and process the values to a color gradient (green > yellow > red). The sensors were built using the Processing 1.5.1 development environment. Available under the GNU LGPL licence version 3 or higher.

  16. Ambient Sensors

    NARCIS (Netherlands)

    Börner, Dirk; Specht, Marcus

    2014-01-01

    This software sketches comprise two custom-built ambient sensors, i.e. a noise and a movement sensor. Both sensors measure an ambient value and process the values to a color gradient (green > yellow > red). The sensors were built using the Processing 1.5.1 development environment. Available under th

  17. Template synthesis and magnetoresistance property of Ni and Co single nanowires electrodeposited into nanopores with a wide range of aspect ratios

    International Nuclear Information System (INIS)

    Nanopores with a wide range of aspect ratios were fabricated in an anodized aluminium oxide layer on bulk metallic aluminium. The aspect ratios (L/D) were around 20-1000 (pore length, L, 1000-60 000 nm; pore diameter, D, 50-100 nm). For comparison, nanopores in polymer films were also prepared using heavy-ion-track etched polyimide films (L, 70 000 nm; D, 70 nm; L/D 1000) and polycarbonate films (L, 30 000 nm; D, 100 nm; L/D = 300). The pore diameter of the anodized aluminium oxide layer was controlled by the anodization voltage, while the pore diameter of the heavy-ion-tracked polyimide and polycarbonate films was controlled by the etching time in a sodium hydroxide alkaline solution. Ni and Co homogeneous single nanowires were fabricated using the electrodeposition and in situ contacted techniques in the nanoporous templates. The Ni and Co nanowires with the largest aspect ratios (L/D = 1000) showed around 2.3% and 1.6% of the typical anisotropic magnetoresistance (AMR), and the effects of aspect ratio on the resistance and AMR were investigated

  18. Boundedness of the Anisotropic Maximal and Anisotropic Singular Integral Operators in Generalized Morrey Spaces

    Institute of Scientific and Technical Information of China (English)

    Vagif S. GULIYEV; Rza Ch. MUSTAFAYEV

    2011-01-01

    In this paper we give the conditions on the pair (ω1,ω2) which ensures the boundedness of the anisotropic maximal operator and anisotropic singular integral operators from one generalized Morrey space Mp,ω1 to another Mp,ω2,1 < p < oo,and from the space M1,ω1 to the weak space W M1,ω2.

  19. Anisotropic Ginzburg-Landau scaling of H c2 and transport properties of 112-type Ca0.8La0.2Fe0.98Co0.02As2 single crystal

    Science.gov (United States)

    Xing, Xiangzhuo; Zhou, Wei; Zhou, Nan; Yuan, Feifei; Pan, Yongqiang; Zhao, Haijun; Xu, Xiaofeng; Shi, Zhixiang

    2016-05-01

    High-quality single crystal Ca0.8La0.2Fe0.98Co0.02As2 has been successfully synthesized using a self-flux method. The magnetization measurement reveals a second peak effect and high critical current density {J}c exceeding 2 × 106 A cm-2 at 5 K (self-field). The upper critical field anisotropy was systematically studied by measuring the electrical resistivity under various magnetic fields and angles. The angle-dependent magnetoresistance, by choosing an appropriate anisotropy parameter within the framework of the anisotropic Ginzburg-Landau (AGL) theory, can be scaled onto one single curve. In the normal state, the negative Hall coefficient shows strong but nonmonotonic T-dependence through a minimum at ˜175 K. Moreover, it is shown that the magnetoresistance apparently violates the semiclassical Kohler’s rule below ˜175 K but can be well scaled by the Hall angle instead. This suggests either a change of carriers with T or exotic anisotropic scattering in the system.

  20. Anomalous magnetoresistance in nanocrystalline gadolinium at low temperatures

    Science.gov (United States)

    Mathew, S. P.; Kaul, S. N.

    2015-02-01

    The results of a detailed investigation of electrical resistivity, ρ(T) and transverse magnetoresistance (MR) in nanocrystalline Gd samples with an average grain size d = 12 nm and 18 nm reveal the following. Besides a major contribution to the residual resistivity, ρr(0), arising from the scattering of conduction electrons from grain surfaces/interfaces/boundaries (which increases drastically as the average grain size decreases, as expected), coherent electron-magnon scattering makes a small contribution to ρr(0), which gets progressively suppressed as the applied magnetic field (H) increases in strength. At low temperatures (T ≲ 40 K) and fields (H = 0 and H = 5 kOe), ρH(T) varies as T3/2 with a change in slope at T+ ≃ 16.5 K. As the field increases beyond 5 kOe, the T3/2 variation of ρH(T) at low temperatures (T ≲ 40 K) changes over to the T2 variation and a slight change in the slope dρH/dT2 at T+(H) disappears at H ⩾ 20 kOe. The electron-electron scattering (Fermi liquid) contribution to the T2 term, if present, is completely swamped by the coherent electron-magnon scattering contribution. As a function of temperature, (negative) MR goes through a dip at a temperature Tmin ≃ T+, which increases with H as H2/3. MR at Tmin also increases in magnitude with H and attains a value as large as ˜15% (17%) for d = 12 nm (18 nm) at H = 90 kOe. This value is roughly five times greater than that reported earlier for crystalline Gd at Tmin ≃ 100 K. Unusually large MR results from an anomalous softening of magnon modes at T ≃ Tmin ≈ 20 K. In the light of our previous magnetization and specific heat results, we show that all the above observations, including the H2/3 dependence of Tmin (with Tmin(H) identified as the Bose-Einstein condensation (BEC) transition temperature, TBEC(H)), are the manifestations of the BEC of magnons at temperatures T ⩽ TBEC. Contrasted with crystalline Gd, which behaves as a three-dimensional (3D) pure uniaxial dipolar

  1. Domain wall magnetoresistance in nanowires: Dependence on geometrical factors and material parameters

    Energy Technology Data Exchange (ETDEWEB)

    Allende, S.; Retamal, J.C. [Departamento de Física, CEDENNA, Universidad de Santiago de Chile, USACH, Avenida Ecuador 3493, 917-0124 Santiago (Chile); Altbir, D., E-mail: dora.altbir@usach.cl [Departamento de Física, CEDENNA, Universidad de Santiago de Chile, USACH, Avenida Ecuador 3493, 917-0124 Santiago (Chile); D' Albuquerque e Castro, J. [Instituto de Física, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, Rio de Janeiro 21941-972 (Brazil)

    2014-04-15

    The magnetoresistance associated with the presence of domain walls in metallic nanowires is investigated as a function of geometrical parameters, corresponding to the wall thickness and the nanowire width, as well as of material parameters, such as the band filling and the exchange interaction. Transport across the structure is described within Landauer formalism. Both cases of saturated and non-saturated ferromagnets are considered, and in all of them the contributions from spin-flip and non-spin-flip are separately analyzed. It has been found that for certain range of parameters deviations in the normalized magnetoresistance as high as 20% may be achieved. In addition, it has been shown that the spin-flip process is dependent on the wall thickness. - Highlights: • We identify thickness regions within which transport across the wall is dominated by either spin-flip or non-spin-flip process. • We analyze the dependence of the magnetoresistance on both the material's band filling and strength of the exchange interaction. • We identify parameter ranges within which magnetoresistance ratios as high as 20% or even more might be achieved.

  2. Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory

    International Nuclear Information System (INIS)

    We report new experimental data regarding the transverse magnetoresistance measured in a family of thin gold films of different thickness with the electric field E oriented perpendicular to the magnetic field B (both fields contained within the plane of the film), as well as a theoretical description of size effects based upon a solution of Boltzmann Transport Equation. The measurements were performed at low temperatures T (4 K ≤ T ≤ 50 K) under magnetic field strengths B (1.5 T ≤ B ≤ 9 T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4 K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reproduce the experimental data.

  3. The large magnetoresistance of La1-xSrxCoO3 at low temperatures

    International Nuclear Information System (INIS)

    We report here the resistivity (ρ) and the magnetoresistance (MR) of the ferromagnetic perovskite oxide system La1-xSrxCoO3 (0.10.2) the magnitude of the MR is typically small (1-xSrxMnO3 system. (authors). Letter-to-the-editor

  4. Magnetoresistance and Anomalous Hall Effect of InSb Doped with Mn

    Directory of Open Access Journals (Sweden)

    A.V. Kochura

    2013-12-01

    Full Text Available Transport properties of polycrystalline (In, MnSb samples are investigated. Behavior of the temperature and magnetic field dependencies of the resistivity, anomalous Hall coefficient and magnetoresistivity at low temperatures points out the influence of Mn complexes, Mn ions and nano- and microsizes MnSb precipitates on charge transport.

  5. Annealing effect on current perpendicular to plane systems modeled by giant magnetoresistance simulation

    NARCIS (Netherlands)

    Jonkers, PAE

    2001-01-01

    A simulation single-electron model is presented to describe the effect of annealing current perpendicular to plane-giant magnetoresistance (CPP-GMR) systems. Progressive annealing is represented by a progressively increasing number of impurities occurring at the interfaces of adjacent layers constit

  6. Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance

    NARCIS (Netherlands)

    Vlietstra, N.; Shan, J.; Castel, V.; Youssef, J.B.; Bauer, G.E.W.; Van Wees, B.J.

    2013-01-01

    The effective field torque of an yttrium-iron-garnet (YIG) film on the spin accumulation in an attached platinum (Pt) film is measured by the spin-Hall magnetoresistance (SMR). As a result, the magnetization direction of a ferromagnetic insulating layer can be measured electrically. Experimental tra

  7. Elucidating the role of hyperfine interactions on organic magnetoresistance using deuterated aluminium tris(8-hydroxyquinoline)

    OpenAIRE

    Rolfe, N. J.; Heeney, M.; Wyatt, P. B.; Drew, A.J.; Kreouzis, T.; Gillin, W P

    2009-01-01

    Measurements of the effect of a magnetic field on the light output and current through an organic light emitting diode made with deuterated aluminium tris(8-hydroxyquinoline) have shown that hyperfine coupling with protons is not the cause of the intrinsic organic magnetoresistance. We suggest that interactions with unpaired electrons in the device may be responsible.

  8. Quasiclassical theory of spin-valve magnetoresistance: role of spin-flip scattering

    International Nuclear Information System (INIS)

    The Boltzmann kinetic equation is used to analyse the in-plane electronic transport in magnetic multilayers. Both diffuse and electron-momentum-conserving spin-flip scattering processes are included. Numerical results show that the momentum-conserving scattering processes reduce the spin-valve magnetoresistance. (author)

  9. Giant magnetoresistance in melt spun Cu85Co10Ni5

    DEFF Research Database (Denmark)

    Curiotto, Stefano; Johnson, Erik; Celegato, Federica;

    2009-01-01

    structure with annealing has been studied by X-ray diffraction. The. ne microstructure has been observed by TEM and related to the magnetic properties, investigated in a vibrating sample magnetometer. In the studied composition the magnetoresistance was found to be lower than in binary CuCo alloys without...

  10. Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory

    Science.gov (United States)

    Oyarzún, Simón; Henríquez, Ricardo; Suárez, Marco Antonio; Moraga, Luis; Kremer, Germán; Munoz, Raúl C.

    2014-01-01

    We report new experimental data regarding the transverse magnetoresistance measured in a family of thin gold films of different thickness with the electric field E oriented perpendicular to the magnetic field B (both fields contained within the plane of the film), as well as a theoretical description of size effects based upon a solution of Boltzmann Transport Equation. The measurements were performed at low temperatures T (4 K ≤ T ≤ 50 K) under magnetic field strengths B (1.5 T ≤ B ≤ 9 T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4 K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reproduce the experimental data.

  11. Defect analysis in fast electron irradiated silicon by Hall and magnetoresistivity means

    International Nuclear Information System (INIS)

    Two sets of p- and n-conductivity type silicon samples have been irradiated by 6.6 MeV electrons with fluence from 1 to 5 (×1016) e/cm2. Hall and magnetoresistivity measurement techniques were used to determine irradiation induced changes. The point defect coalescence was assumed to describe the behavior of the electrical parameters

  12. Effect of MR Element Slant Angle on Output Voltage of Magnetoresistive Device

    Institute of Scientific and Technical Information of China (English)

    Y L Jing; Yu Shi; H W Zhang; X D Jiang; H J Zheng

    2006-01-01

    Correlation between optimum of MR element slant angle and the ratio of magnetic pole length to magnetoresistance element length on linear magnetic encoder is explored in this paper. Optimum slant angle of MR element is different and increases in proportion to the ratio of magnetic pole length to MR element length by slant multi-phase filtering model.

  13. Integration of GMR Sensors with Different Technologies

    Science.gov (United States)

    Cubells-Beltrán, María-Dolores; Reig, Càndid; Madrenas, Jordi; De Marcellis, Andrea; Santos, Joana; Cardoso, Susana; Freitas, Paulo P.

    2016-01-01

    Less than thirty years after the giant magnetoresistance (GMR) effect was described, GMR sensors are the preferred choice in many applications demanding the measurement of low magnetic fields in small volumes. This rapid deployment from theoretical basis to market and state-of-the-art applications can be explained by the combination of excellent inherent properties with the feasibility of fabrication, allowing the real integration with many other standard technologies. In this paper, we present a review focusing on how this capability of integration has allowed the improvement of the inherent capabilities and, therefore, the range of application of GMR sensors. After briefly describing the phenomenological basis, we deal on the benefits of low temperature deposition techniques regarding the integration of GMR sensors with flexible (plastic) substrates and pre-processed CMOS chips. In this way, the limit of detection can be improved by means of bettering the sensitivity or reducing the noise. We also report on novel fields of application of GMR sensors by the recapitulation of a number of cases of success of their integration with different heterogeneous complementary elements. We finally describe three fully functional systems, two of them in the bio-technology world, as the proof of how the integrability has been instrumental in the meteoric development of GMR sensors and their applications. PMID:27338415

  14. Integration of GMR Sensors with Different Technologies

    Directory of Open Access Journals (Sweden)

    María-Dolores Cubells-Beltrán

    2016-06-01

    Full Text Available Less than thirty years after the giant magnetoresistance (GMR effect was described, GMR sensors are the preferred choice in many applications demanding the measurement of low magnetic fields in small volumes. This rapid deployment from theoretical basis to market and state-of-the-art applications can be explained by the combination of excellent inherent properties with the feasibility of fabrication, allowing the real integration with many other standard technologies. In this paper, we present a review focusing on how this capability of integration has allowed the improvement of the inherent capabilities and, therefore, the range of application of GMR sensors. After briefly describing the phenomenological basis, we deal on the benefits of low temperature deposition techniques regarding the integration of GMR sensors with flexible (plastic substrates and pre-processed CMOS chips. In this way, the limit of detection can be improved by means of bettering the sensitivity or reducing the noise. We also report on novel fields of application of GMR sensors by the recapitulation of a number of cases of success of their integration with different heterogeneous complementary elements. We finally describe three fully functional systems, two of them in the bio-technology world, as the proof of how the integrability has been instrumental in the meteoric development of GMR sensors and their applications.

  15. Search for anisotropic light propagation as a function of laser beam alignment relative to the Earth's velocity vector

    OpenAIRE

    Navia C. E.; Augusto C. R. A.; Franceschini D. F.; Robba M. B.; Tsui K. H.,

    2006-01-01

    A laser diffraction experiment was conducted to study light propagation in air. The experiment is easy to reproduce and it is based on simple optical principles. Two optical sensors (segmented photo-diodes) are used for measuring the position of diffracted light spots with a precision better than 0.1 μ m. The goal is to look for signals of anisotropic light propagation as function of the laser beam alignment to the Earth’s motion (solar barycenter motion) obtain...

  16. Magnetoresistance of galfenol-based magnetic tunnel junction

    OpenAIRE

    Gobaut, B.; Vinai, G.; C. Castán-Guerrero; Krizmancic, D.; Rafaqat, H.; Roddaro, S.; Rossi, G; G. Panaccione; Eddrief, M; Marangolo, M; P. Torelli

    2015-01-01

    The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors. In this study we realized a magnetotunnel junction in which one layer is made of Galfenol (Fe1-xGax) which possesses one of the highest magnetostrictive coefficient known. The multilayer stack has been grown by molecular beam epitaxy and e-beam evaporation. Optical lithography and physical etching ...

  17. Magnetoresistance and spin-transfer torque in magnetic tunnel junctions

    OpenAIRE

    Sun, J. Z.; Ralph, D. C.

    2008-01-01

    We comment on both recent progress and lingering puzzles related to research on magnetic tunnel junctions (MTJs). MTJs are already being used in applications such as magnetic-field sensors in the read heads of disk drives, and they may also be the first device geometry in which spin-torque effects are applied to manipulate magnetic dynamics, in order to make nonvolatile magnetic random access memory. However, there remain many unanswered questions about such basic properties as the magnetores...

  18. Bond diluted anisotropic quantum Heisenberg model

    International Nuclear Information System (INIS)

    Effects of the bond dilution on the critical temperatures, phase diagrams and the magnetization behaviors of the isotropic and anisotropic quantum Heisenberg model have been investigated in detail. For the isotropic case, bond percolation threshold values have been determined for several numbers of two (2D) and three (3D) dimensional lattices. In order to investigate the effect of the anisotropy in the exchange interaction on the results obtained for the isotropic model, a detailed investigation has been made on a honeycomb lattice. Some interesting results, such as second order reentrant phenomena in the phase diagrams have been found. - Highlights: • Anisotropic quantum Heisenberg model with bond dilution investigated. • Bond percolation threshold values given for 2D and 3D lattices in isotropic case. • Phase diagrams and ground state magnetizations investigated in detail. • Variation of the bond percolation threshold values with anisotropy determined

  19. Anisotropic hydrodynamics for conformal Gubser flow

    CERN Document Server

    Strickland, Michael; Ryblewski, Radoslaw

    2015-01-01

    In this proceedings contribution, we review the exact solution of the anisotropic hydrodynamics equations for a system subject to Gubser flow. For this purpose, we use the leading-order anisotropic hydrodynamics equations which assume that the distribution function is ellipsoidally symmetric in local-rest-frame momentum. We then prove that the SO(3)_q symmetry in de Sitter space constrains the anisotropy tensor to be of spheroidal form with only one independent anisotropy parameter remaining. As a consequence, the exact solution reduces to the problem of solving two coupled non-linear differential equations. We show that, in the limit that the relaxation time goes to zero, one obtains Gubser's ideal hydrodynamic solution and, in the limit that the relaxation time goes to infinity, one obtains the exact free streaming solution obtained originally by Denicol et al. For finite relaxation time, we solve the equations numerically and compare to the exact solution of the relaxation-time-approximation Boltzmann equa...

  20. Rainbow metric from quantum gravity: anisotropic cosmology

    CERN Document Server

    Assanioussi, Mehdi

    2016-01-01

    In this paper we present a construction of effective cosmological models which describe the propagation of a massive quantum scalar field on a quantum anisotropic cosmological spacetime. Each obtained effective model is represented by a rainbow metric in which particles of distinct momenta propagate on different classical geometries. Our analysis shows that upon certain assumptions and conditions on the parameters determining such anisotropic models, we surprisingly obtain a unique deformation parameter $\\beta$ in the modified dispersion relation of the modes. Hence inducing an isotropic deformation despite the general starting considerations. We then ensure the recovery of the dispersion relation realized in the isotropic case, studied in [arXiv:1412.6000], when some proper symmetry constraints are imposed, and we estimate the value of the deformation parameter for this case in loop quantum cosmology context.