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Sample records for anisotropic hexagonal boron

  1. Anisotropic Hexagonal Boron Nitride Nanomaterials - Synthesis and Applications

    Energy Technology Data Exchange (ETDEWEB)

    Han,W.Q.

    2008-08-01

    Boron nitride (BN) is a synthetic binary compound located between III and V group elements in the Periodic Table. However, its properties, in terms of polymorphism and mechanical characteristics, are rather close to those of carbon compared with other III-V compounds, such as gallium nitride. BN crystallizes into a layered or a tetrahedrally linked structure, like those of graphite and diamond, respectively, depending on the conditions of its preparation, especially the pressure applied. Such correspondence between BN and carbon readily can be understood from their isoelectronic structures [1, 2]. On the other hand, in contrast to graphite, layered BN is transparent and is an insulator. This material has attracted great interest because, similar to carbon, it exists in various polymorphic forms exhibiting very different properties; however, these forms do not correspond strictly to those of carbon. Crystallographically, BN is classified into four polymorphic forms: Hexagonal BN (h-BN) (Figure 1(b)); rhombohedral BN (r-BN); cubic BN (c-BN); and wurtzite BN (w-BN). BN does not occur in nature. In 1842, Balmain [3] obtained BN as a reaction product between molten boric oxide and potassium cyanide under atmospheric pressure. Thereafter, many methods for its synthesis were reported. h-BN and r-BN are formed under ambient pressure. c-BN is synthesized from h-BN under high pressure at high temperature while w-BN is prepared from h-BN under high pressure at room temperature [1]. Each BN layer consists of stacks of hexagonal plate-like units of boron and nitrogen atoms linked by SP{sup 2} hybridized orbits and held together mainly by Van der Waals force (Fig 1(b)). The hexagonal polymorph has two-layered repeating units: AA'AA'... that differ from those in graphite: ABAB... (Figure 1(a)). Within the layers of h-BN there is coincidence between the same phases of the hexagons, although the boron atoms and nitrogen atoms are alternatively located along the c

  2. Fabrication of particular structures of hexagonal boron nitride and boron-carbon-nitrogen layers by anisotropic etching

    Science.gov (United States)

    Vishwakarma, Riteshkumar; Sharma, Subash; Shinde, Sachin M.; Sharma, Kamal P.; Thangaraja, Amutha; Kalita, Golap; Tanemura, Masaki

    2016-05-01

    Anisotropic etching of hexagonal boron nitride (h-BN) and boron-carbon-nitrogen (BCN) basal plane can be an exciting platform to develop well-defined structures with interesting properties. Here, we developed an etching process of atomically thin h-BN and BCN layers to fabricate nanoribbons (NRs) and other distinct structures by annealing in H2 and Ar gas mixture. BCN and h-BN films are grown on Cu foil by chemical vapor deposition (CVD) using solid camphor and ammonia borane as carbon, nitrogen and boron source, respectively. Formation of micron size well-defined etched holes and NRs are obtained in both h-BN and BCN layers by the post growth annealing process. The etching process of h-BN and BCN basal plane to fabricate NRs and other structures with pronounced edges can open up new possibilities in 2D hybrid materials.

  3. Patterning monolayer graphene with zigzag edges on hexagonal boron nitride by anisotropic etching

    Science.gov (United States)

    Wang, Guole; Wu, Shuang; Zhang, Tingting; Chen, Peng; Lu, Xiaobo; Wang, Shuopei; Wang, Duoming; Watanabe, Kenji; Taniguchi, Takashi; Shi, Dongxia; Yang, Rong; Zhang, Guangyu

    2016-08-01

    Graphene nanostructures are potential building blocks for nanoelectronic and spintronic devices. However, the production of monolayer graphene nanostructures with well-defined zigzag edges remains a challenge. In this paper, we report the patterning of monolayer graphene nanostructures with zigzag edges on hexagonal boron nitride (h-BN) substrates by an anisotropic etching technique. We found that hydrogen plasma etching of monolayer graphene on h-BN is highly anisotropic due to the inert and ultra-flat nature of the h-BN surface, resulting in zigzag edge formation. The as-fabricated zigzag-edged monolayer graphene nanoribbons (Z-GNRs) with widths below 30 nm show high carrier mobility and width-dependent energy gaps at liquid helium temperature. These high quality Z-GNRs are thus ideal structures for exploring their valleytronic or spintronic properties.

  4. Anisotropic emission of the X-ray K-emission band of nitrogen in hexagonal boron nitride

    International Nuclear Information System (INIS)

    The intensity distribution of the N K-emission band of hexagonal boron nitride samples with partially orientated crystallites was found to be strongly dependent upon the take-off angle of the emitted radiation. The observed emission bands can be separated unambiguously into a sigma- and a π-subband. On the basis of the directional characteristic of radiating dipoles within the layers (sigma-bondings) and perpendicular to the layers (π-bonding) the angular dependence of the intensity of the subbands is quantitatively explained. In addition the degree of orientation of the crystallites on the sample can be determined. The intensity distributions of the emission bands to be expected for single crystals and for samples without any texture are determined; in the latter case the results are found to be in good agreement with experimental results. (orig.)

  5. Inter-layer potential for hexagonal boron nitride

    Science.gov (United States)

    Leven, Itai; Azuri, Ido; Kronik, Leeor; Hod, Oded

    2014-03-01

    A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

  6. Hyperbolic phonon polaritons in hexagonal boron nitride

    Science.gov (United States)

    Dai, Siyuan

    2015-03-01

    Uniaxial materials whose axial and tangential permittivities have opposite signs are referred to as indefinite or hyperbolic media. While hyperbolic responses are normally achieved with metamaterials, hexagonal boron nitride (hBN) naturally possesses this property due to the anisotropic phonons in the mid-infrared. Using scattering-type scanning near-field optical microscopy, we studied polaritonic phenomena in hBN. We performed infrared nano-imaging of highly confined and low-loss hyperbolic phonon polaritons in hBN. The polariton wavelength was shown to be governed by the hBN thickness according to a linear law persisting down to few atomic layers [Science, 343, 1125-1129 (2014)]. Additionally, we carried out the modification of hyperbolic response in heterostructures comprised of a mononlayer graphene deposited on hBN. Electrostatic gating of the top graphene layer allows for the modification of wavelength and intensity of hyperbolic phonon polaritons in bulk hBN. The physics of the modification originates from the plasmon-phonon coupling in the hyperbolic medium. Furthermore, we demonstrated the ``hyperlens'' for subdiffractional imaging and focusing using a slab of hBN.

  7. Quantum emission from hexagonal boron nitride monolayers.

    Science.gov (United States)

    Tran, Toan Trong; Bray, Kerem; Ford, Michael J; Toth, Milos; Aharonovich, Igor

    2016-01-01

    Artificial atomic systems in solids are widely considered the leading physical system for a variety of quantum technologies, including quantum communications, computing and metrology. To date, however, room-temperature quantum emitters have only been observed in wide-bandgap semiconductors such as diamond and silicon carbide, nanocrystal quantum dots, and most recently in carbon nanotubes. Single-photon emission from two-dimensional materials has been reported, but only at cryogenic temperatures. Here, we demonstrate room-temperature, polarized and ultrabright single-photon emission from a colour centre in two-dimensional hexagonal boron nitride. Density functional theory calculations indicate that vacancy-related defects are a probable source of the emission. Our results demonstrate the unprecedented potential of van der Waals crystals for large-scale nanophotonics and quantum information processing. PMID:26501751

  8. Quantum emission from hexagonal boron nitride monolayers

    Science.gov (United States)

    Tran, Toan Trong; Bray, Kerem; Ford, Michael J.; Toth, Milos; Aharonovich, Igor

    2016-01-01

    Artificial atomic systems in solids are widely considered the leading physical system for a variety of quantum technologies, including quantum communications, computing and metrology. To date, however, room-temperature quantum emitters have only been observed in wide-bandgap semiconductors such as diamond and silicon carbide, nanocrystal quantum dots, and most recently in carbon nanotubes. Single-photon emission from two-dimensional materials has been reported, but only at cryogenic temperatures. Here, we demonstrate room-temperature, polarized and ultrabright single-photon emission from a colour centre in two-dimensional hexagonal boron nitride. Density functional theory calculations indicate that vacancy-related defects are a probable source of the emission. Our results demonstrate the unprecedented potential of van der Waals crystals for large-scale nanophotonics and quantum information processing.

  9. Hexagonal boron nitride and water interaction parameters.

    Science.gov (United States)

    Wu, Yanbin; Wagner, Lucas K; Aluru, Narayana R

    2016-04-28

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems. PMID:27131542

  10. Hexagonal boron nitride and water interaction parameters

    Science.gov (United States)

    Wu, Yanbin; Wagner, Lucas K.; Aluru, Narayana R.

    2016-04-01

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems.

  11. Vertical transport in graphene-hexagonal boron nitride heterostructure devices

    OpenAIRE

    Samantha Bruzzone; Demetrio Logoteta; Gianluca Fiori; Giuseppe Iannaccone

    2015-01-01

    Research in graphene-based electronics is recently focusing on devices based on vertical heterostructures of two-dimensional materials. Here we use density functional theory and multiscale simulations to investigate the tunneling properties of single- and double-barrier structures with graphene and few-layer hexagonal boron nitride (h-BN) or hexagonal boron carbon nitride (h-BC2N). We find that tunneling through a single barrier exhibit a weak dependence on energy. We also show that in double...

  12. Communication: Water on hexagonal boron nitride from diffusion Monte Carlo

    Energy Technology Data Exchange (ETDEWEB)

    Al-Hamdani, Yasmine S.; Ma, Ming; Michaelides, Angelos, E-mail: angelos.michaelides@ucl.ac.uk [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Alfè, Dario [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Earth Sciences, University College London, Gower Street, London WC1E 6BT (United Kingdom); Lilienfeld, O. Anatole von [Institute of Physical Chemistry and National Center for Computational Design and Discovery of Novel Materials, Department of Chemistry, University of Basel, Klingelbergstrasse 80, CH-4056 Basel (Switzerland); Argonne Leadership Computing Facility, Argonne National Laboratories, 9700 S. Cass Avenue Argonne, Lemont, Illinois 60439 (United States)

    2015-05-14

    Despite a recent flurry of experimental and simulation studies, an accurate estimate of the interaction strength of water molecules with hexagonal boron nitride is lacking. Here, we report quantum Monte Carlo results for the adsorption of a water monomer on a periodic hexagonal boron nitride sheet, which yield a water monomer interaction energy of −84 ± 5 meV. We use the results to evaluate the performance of several widely used density functional theory (DFT) exchange correlation functionals and find that they all deviate substantially. Differences in interaction energies between different adsorption sites are however better reproduced by DFT.

  13. Communication: Water on hexagonal boron nitride from diffusion Monte Carlo

    International Nuclear Information System (INIS)

    Despite a recent flurry of experimental and simulation studies, an accurate estimate of the interaction strength of water molecules with hexagonal boron nitride is lacking. Here, we report quantum Monte Carlo results for the adsorption of a water monomer on a periodic hexagonal boron nitride sheet, which yield a water monomer interaction energy of −84 ± 5 meV. We use the results to evaluate the performance of several widely used density functional theory (DFT) exchange correlation functionals and find that they all deviate substantially. Differences in interaction energies between different adsorption sites are however better reproduced by DFT

  14. Substrate-induced bandgap in graphene on hexagonal boron nitride

    OpenAIRE

    Giovannetti, Gianluca; Khomyakov, Petr A.; Brocks, Geert; Paul J. Kelly; Brink, Jeroen van den

    2007-01-01

    We determine the electronic structure of a graphene sheet on top of a lattice-matched hexagonal boron nitride (h-BN) substrate using ab initio density functional calculations. The most stable configuration has one carbon atom on top of a boron atom, the other centered above a BN ring. The resulting inequivalence of the two carbon sites leads to the opening of a gap of 53 meV at the Dirac points of graphene and to finite masses for the Dirac fermions. Alternative orientations of the graphene s...

  15. Synthesis of hexagonal boron nitride graphene-like few layers

    Science.gov (United States)

    Yuan, S.; Toury, B.; Journet, C.; Brioude, A.

    2014-06-01

    Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction.Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr01017e

  16. Investigations on the characterization of ion implanted hexagonal boron nitride

    Science.gov (United States)

    Aradi, E.; Naidoo, S. R.; Erasmus, R. M.; Julies, B.; Derry, T. E.

    2013-07-01

    The effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 × 1014-1 × 1016 ions/cm2 and implantation energy ranges from 40 to 160 keV. The thermal dependence is also investigated by varying the annealing temperature from room temperature to 400 °C after implantation. Raman spectroscopy showed Raman active defects one of which is possibly related to the formation of cubic boron nitride nanocrystals (nc-BN) within the implanted range. The relationship of these defect induced Raman active peaks was investigated by varying the implantation parameters. The preliminary Transmission Electron Microscopy (TEM) results also are reported briefly.

  17. The structure and local chemical properties of boron-terminated tetravacancies in hexagonal boron-nitride

    OpenAIRE

    Cretu, Ovidiu; Lin, Yung-Chang; Koshino, Masanori; Tizei, Luiz H. G.; Liu, Zheng; Suenaga, Kazutomo

    2014-01-01

    Imaging and spectroscopy performed in a low-voltage scanning transmission electron microscope (LV-STEM) are used to characterize the structure and chemical properties of boron-terminated tetravacancies in hexagonal boron nitride (h-BN). We confirm earlier theoretical predictions about the structure of these defects and identify new features in the electron energy-loss spectra (EELS) of B atoms using high resolution chemical maps, highlighting differences between these areas and pristine sampl...

  18. Delamination of hexagonal boron nitride in a stirred media mill

    International Nuclear Information System (INIS)

    A scalable process for delamination of hexagonal boron nitride in an aqueous solution of the non-ionic surfactant TWEEN85 using a stirred media mill is presented. The size of the ZrO2 beads used as grinding media governs the dimensions of the ground boron nitride particles as atomic force microscopic investigations (AFM) reveal: the mean flakes thickness decreases from 3.5 to 1.5 nm and the ratio between mean flake area and mean flake thickness increases from 2,200 to 5,800 nm if the grinding media size is reduced from 0.8 to 0.1 mm. This result shows that a high number of stress events in combination with low stress energy (small grinding media) facilitate delamination of the layered material whereas at high stress energies in combination with a low number of stress events (large grinding media) breakage of the layers dominates over delamination. The results of particle height analyses by AFM show that few-layer structures have been formed by stirred media milling. This result is in agreement with the layer thickness dependence of the delamination energy for hexagonal boron nitride. The concentration of nanoparticles remaining dispersed after centrifugation of the ground suspension increases with grinding time and with decreasing grinding media size. After 5 h of grinding using 0.1 mm ZrO2 grinding media the yield of nanoparticle formation is about 5 wt%. The nanoparticles exhibit the typical Raman peak for hexagonal boron nitride at 1,366 cm−1 showing that the in-plane order in the milled platelets is remained.

  19. Superior thermal conductivity in suspended bilayer hexagonal boron nitride

    Science.gov (United States)

    Wang, Chengru; Guo, Jie; Dong, Lan; Aiyiti, Adili; Xu, Xiangfan; Li, Baowen

    2016-05-01

    We reported the basal-plane thermal conductivity in exfoliated bilayer hexagonal boron nitride h-BN that was measured using suspended prepatterned microstructures. The h-BN sample suitable for thermal measurements was fabricated by dry-transfer method, whose sample quality, due to less polymer residues on surfaces, is believed to be superior to that of PMMA-mediated samples. The measured room temperature thermal conductivity is around 484 Wm‑1K‑1(+141 Wm‑1K‑1/ ‑24 Wm‑1K‑1) which exceeds that in bulk h-BN, providing experimental observation of the thickness-dependent thermal conductivity in suspended few-layer h-BN.

  20. Carbon nanotube quantum dots on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Baumgartner, A., E-mail: andreas.baumgartner@unibas.ch; Abulizi, G.; Gramich, J.; Schönenberger, C. [Institute of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel (Switzerland); Watanabe, K.; Taniguchi, T. [National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-07-14

    We report the fabrication details and low-temperature characteristics of carbon nanotube (CNT) quantum dots on flakes of hexagonal boron nitride (hBN) as substrate. We demonstrate that CNTs can be grown on hBN by standard chemical vapor deposition and that standard scanning electron microscopy imaging and lithography can be employed to fabricate nanoelectronic structures when using optimized parameters. This proof of concept paves the way to more complex devices on hBN, with more predictable and reproducible characteristics and electronic stability.

  1. Electronic structure of superlattices of graphene and hexagonal boron nitride

    KAUST Repository

    Kaloni, Thaneshwor P.

    2011-11-14

    We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

  2. Band gap effects of hexagonal boron nitride using oxygen plasma

    International Nuclear Information System (INIS)

    Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing

  3. Vertical transport in graphene-hexagonal boron nitride heterostructure devices

    Science.gov (United States)

    Bruzzone, Samantha; Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

    2015-09-01

    Research in graphene-based electronics is recently focusing on devices based on vertical heterostructures of two-dimensional materials. Here we use density functional theory and multiscale simulations to investigate the tunneling properties of single- and double-barrier structures with graphene and few-layer hexagonal boron nitride (h-BN) or hexagonal boron carbon nitride (h-BC2N). We find that tunneling through a single barrier exhibit a weak dependence on energy. We also show that in double barriers separated by a graphene layer we do not observe resonant tunneling, but a significant increase of the tunneling probability with respect to a single barrier of thickness equal to the sum of the two barriers. This is due to the fact that the graphene layer acts as an effective phase randomizer, suppressing resonant tunneling and effectively letting a double-barrier structure behave as two single-barriers in series. Finally, we use multiscale simulations to reproduce a current-voltage characteristics resembling that of a resonant tunneling diode, that has been experimentally observed in single barrier structure. The peak current is obtained when there is perfect matching between the densities of states of the cathode and anode graphene regions.

  4. Structure and local chemical properties of boron-terminated tetravacancies in hexagonal boron nitride.

    Science.gov (United States)

    Cretu, Ovidiu; Lin, Yung-Chang; Koshino, Masanori; Tizei, Luiz H G; Liu, Zheng; Suenaga, Kazutomo

    2015-02-20

    Imaging and spectroscopy performed in a low-voltage scanning transmission electron microscope are used to characterize the structure and chemical properties of boron-terminated tetravacancies in hexagonal boron nitride. We confirm earlier theoretical predictions about the structure of these defects and identify new features in the electron energy-loss spectra of B atoms using high resolution chemical maps, highlighting differences between these areas and pristine sample regions. We correlate our experimental data with calculations which help explain our observations. PMID:25763963

  5. Tribological properties of cubic, amorphous and hexagonal boron nitride films

    International Nuclear Information System (INIS)

    Cubic boron nitride (c-BN), amorphous boron nitride (a-BN) and hexagonal boron nitride (h-BN) films were deposited onto a silicon substrate using a magnetically enhanced plasma ion plating method which has a hot cathode plasma discharge in a parallel magnetic field. A reciprocating tribometer was used to examine friction and wear properties for these three BN films, whose crystal structures were identified by IR spectroscopy. The tribological properties were revealed to be highly dependent on the films' crystal structures. The c-BN film showed the highest wear and peeling resistance of the tested films. The lubricating performance of the c-BN film proved significant with a long lubricating life and low friction. In contrast, the a-BN and h-BN films showed short lubricating endurance lives and large friction changes in spite of the fact that they are good in general as solid lubricants. These unexpected results are speculated to reflect the premature debonding of the h-BN and a-BN films during sliding and the subsequent discharge of their flakes out of the nip between the substrate and the ball indenter, owing to their lower adhesion to the substrate. (orig.)

  6. Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride

    Science.gov (United States)

    Liu, Zheng; Gong, Yongji; Zhou, Wu; Ma, Lulu; Yu, Jingjiang; Idrobo, Juan Carlos; Jung, Jeil; MacDonald, Allan H.; Vajtai, Robert; Lou, Jun; Ajayan, Pulickel M.

    2013-10-01

    Hexagonal boron nitride is a two-dimensional layered material that can be stable at 1,500 °C in air and will not react with most chemicals. Here we demonstrate large-scale, ultrathin, oxidation-resistant coatings of high-quality hexagonal boron nitride layers with controlled thicknesses from double layers to bulk. We show that such ultrathin hexagonal boron nitride films are impervious to oxygen diffusion even at high temperatures and can serve as high-performance oxidation-resistant coatings for nickel up to 1,100 °C in oxidizing atmospheres. Furthermore, graphene layers coated with a few hexagonal boron nitride layers are also protected at similarly high temperatures. These hexagonal boron nitride atomic layer coatings, which can be synthesized via scalable chemical vapour deposition method down to only two layers, could be the thinnest coating ever shown to withstand such extreme environments and find applications as chemically stable high-temperature coatings.

  7. High thermal conductivity of hexagonal boron nitride laminates

    Science.gov (United States)

    Zheng, Jin-Cheng; Zhang, Liang; Kretinin, A. V.; Morozov, S. V.; Wang, Yi Bo; Wang, Tun; Li, Xiaojun; Ren, Fei; Zhang, Jingyu; Lu, Ching-Yu; Chen, Jia-Cing; Lu, Miao; Wang, Hui-Qiong; Geim, A. K.; Novoselov, K. S.

    2016-03-01

    Two-dimensional materials are characterised by a number of unique physical properties which can potentially make them useful to a wide diversity of applications. In particular, the large thermal conductivity of graphene and hexagonal boron nitride (hBN) has already been acknowledged and these materials have been suggested as novel core materials for thermal management in electronics. However, it was not clear if mass produced flakes of hBN would allow one to achieve an industrially-relevant value of thermal conductivity. Here we demonstrate that laminates of hBN exhibit thermal conductivity of up to 20 W/m·K, which is significantly larger than that currently used in thermal management. We also show that the thermal conductivity of laminates increases with the increasing volumetric mass density, which creates a way of fine tuning its thermal properties.

  8. Modelling heat conduction in polycrystalline hexagonal boron-nitride films

    Science.gov (United States)

    Mortazavi, Bohayra; Pereira, Luiz Felipe C.; Jiang, Jin-Wu; Rabczuk, Timon

    2015-08-01

    We conducted extensive molecular dynamics simulations to investigate the thermal conductivity of polycrystalline hexagonal boron-nitride (h-BN) films. To this aim, we constructed large atomistic models of polycrystalline h-BN sheets with random and uniform grain configuration. By performing equilibrium molecular dynamics (EMD) simulations, we investigated the influence of the average grain size on the thermal conductivity of polycrystalline h-BN films at various temperatures. Using the EMD results, we constructed finite element models of polycrystalline h-BN sheets to probe the thermal conductivity of samples with larger grain sizes. Our multiscale investigations not only provide a general viewpoint regarding the heat conduction in h-BN films but also propose that polycrystalline h-BN sheets present high thermal conductivity comparable to monocrystalline sheets.

  9. Nanocrystalline-graphene-tailored hexagonal boron nitride thin films.

    Science.gov (United States)

    Lee, Kang Hyuck; Shin, Hyeon-Jin; Kumar, Brijesh; Kim, Han Sol; Lee, Jinyeong; Bhatia, Ravi; Kim, Sang-Hyeob; Lee, In-Yeal; Lee, Hyo Sug; Kim, Gil-Ho; Yoo, Ji-Beom; Choi, Jae-Young; Kim, Sang-Woo

    2014-10-20

    Unintentionally formed nanocrystalline graphene (nc-G) can act as a useful seed for the large-area synthesis of a hexagonal boron nitride (h-BN) thin film with an atomically flat surface that is comparable to that of exfoliated single-crystal h-BN. A wafer-scale dielectric h-BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc-G, which prevented structural deformations in a chemical vapor deposition process. The growth mechanism of this nc-G-tailored h-BN thin film was systematically analyzed. This approach provides a novel method for preparing high-quality two-dimensional materials on a large surface. PMID:25204810

  10. Etched graphene quantum dots on hexagonal boron nitride

    Science.gov (United States)

    Engels, S.; Epping, A.; Volk, C.; Korte, S.; Voigtländer, B.; Watanabe, K.; Taniguchi, T.; Trellenkamp, S.; Stampfer, C.

    2013-08-01

    We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9 T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN.

  11. Functionalized hexagonal boron nitride nanomaterials: emerging properties and applications.

    Science.gov (United States)

    Weng, Qunhong; Wang, Xuebin; Wang, Xi; Bando, Yoshio; Golberg, Dmitri

    2016-07-11

    Functionalization is an important way to breed new properties and applications for a material. This review presents an overview of the progresses in functionalized hexagonal boron nitride (h-BN) nanomaterials. It begins with an introduction of h-BN structural features, physical and chemical properties, followed by an emphasis on the developments of BN functionalization strategies and its emerging properties/applications, and ends with the research perspectives. Different functionalization methods, including physical and chemical routes, are comprehensively described toward fabrication of various BN derivatives, hetero- and porous structures, etc. Novel properties of functionalized BN materials, such as high water solubility, excellent biocompatibility, tunable surface affinities, good processibility, adjustable band gaps, etc., have guaranteed wide applications in biomedical, electronic, composite, environmental and "green" energy-related fields. PMID:27173728

  12. Hexagonal-boron nitride substrates for electroburnt graphene nanojunctions

    Science.gov (United States)

    Sadeghi, Hatef; Sangtarash, Sara; Lambert, Colin

    2016-08-01

    We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through graphene nanojunctions just before gap formation. Junctions in vacuum and on hBN are formed using classical molecular dynamics to create initial structures, followed by relaxation using density functional theory. We find that the hBN only slightly reduces the current through the junctions at low biases. Furthermore due to quantum interference at the last moments of breaking, the current though a single carbon filament spanning the gap is found to be higher than the current through two filaments spanning the gap in parallel. This feature is present both in the presence of absence of hBN.

  13. A new monoclinic structure for compressed hexagonal boron nitride

    International Nuclear Information System (INIS)

    A prominent contraction of the interplanar spacing between sp2 sheets from 3.33 to 3.10 angstrom in so-called compressed h-BN, which appears on the phase transition from h(hexagonal)- to c(cubic)-boron nitride (BN) under high pressure (7.7 GPa) at high temperature (1,800 C), is examined by high-resolution transmission electron microscopy (HRTEM). It is attributable to a monoclinic lattice distortion of the residual h-BN, which originates from the difference in the compressibility as well as the thermal expansion between adjoining h- and c-BN grains. The parameters of the monoclinic unit-cell are am = 4.33, bm = 2.50, cm = 3.1--3.3 angstrom and β = 92--95 degree. Thin plates of h-BN are often folded and the folding also causes the monoclinic structure

  14. Periodic buckling patterns of graphene/hexagonal boron nitride heterostructure

    International Nuclear Information System (INIS)

    Graphene/hexagonal boron nitride (h-BN) heterostructure has showed great potential to improve the performance of a graphene device. A graphene on an h-BN substrate may buckle due to the thermal expansion mismatch between the graphene and h-BN. We used an energy method to investigate the periodic buckling patterns including one-dimensional, square checkerboard, hexagonal, equilateral triangular and herringbone mode in a graphene/h-BN heterostructure under equi-biaxial compression. The total energy, consisting of cohesive energy, graphene membrane energy and graphene bending energy, for each buckling pattern is obtained analytically. At a compression slightly larger than the critical strain, all buckling patterns have the same total energies, which suggests that any buckling pattern may occur. At a compression much larger than the critical strain, the herringbone mode has the lowest total energy by significantly reducing the membrane energy of graphene at the expense of a slight increase of the bending energy of graphene and cohesive energy. These results may serve as guidelines for strain engineering in graphene/h-BN heterostructures. (paper)

  15. Transport properties of ultrathin black phosphorus on hexagonal boron nitride

    International Nuclear Information System (INIS)

    Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO2 substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO2 substrates and reduces the hysteresis at room temperature

  16. Transport properties of ultrathin black phosphorus on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Doganov, Rostislav A.; Özyilmaz, Barbaros [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, 28 Medical Drive, 117456 Singapore (Singapore); Koenig, Steven P.; Yeo, Yuting [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2015-02-23

    Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.

  17. Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions

    International Nuclear Information System (INIS)

    Large area chemical vapor deposited graphene and hexagonal boron nitride was used to fabricate graphene–hexagonal boron nitride–graphene symmetric field effect transistors. Gate control of the tunneling characteristics is observed similar to previously reported results for exfoliated graphene–hexagonal boron nitride–graphene devices. Density-of-states features are observed in the tunneling characteristics of the devices, although without large resonant peaks that would arise from lateral momentum conservation. The lack of distinct resonant behavior is attributed to disorder in the devices, and a possible source of the disorder is discussed

  18. Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire.

    Science.gov (United States)

    Jang, A-Rang; Hong, Seokmo; Hyun, Chohee; Yoon, Seong In; Kim, Gwangwoo; Jeong, Hu Young; Shin, Tae Joo; Park, Sung O; Wong, Kester; Kwak, Sang Kyu; Park, Noejung; Yu, Kwangnam; Choi, Eunjip; Mishchenko, Artem; Withers, Freddie; Novoselov, Kostya S; Lim, Hyunseob; Shin, Hyeon Suk

    2016-05-11

    Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials. PMID:27120101

  19. Directional anisotropy, finite size effect and elastic properties of hexagonal boron nitride

    Science.gov (United States)

    Thomas, Siby; Ajith, K. M.; Valsakumar, M. C.

    2016-07-01

    Classical molecular dynamics simulations have been performed to analyze the elastic and mechanical properties of two-dimensional (2D) hexagonal boron nitride (h-BN) using a Tersoff-type interatomic empirical potential. We present a systematic study of h-BN for various system sizes. Young’s modulus and Poisson’s ratio are found to be anisotropic for finite sheets whereas they are isotropic for the infinite sheet. Both of them increase with system size in accordance with a power law. It is concluded from the computed values of elastic constants that h-BN sheets, finite or infinite, satisfy Born’s criterion for mechanical stability. Due to the the strong in-plane sp2 bonds and the small mass of boron and nitrogen atoms, h-BN possesses high longitudinal and shear velocities. The variation of bending rigidity with system size is calculated using the Foppl–von Karman approach by coupling the in-plane bending and out-of-plane stretching modes of the 2D h-BN.

  20. Reduced stability of copper interconnects due to wrinkles and steps on hexagonal boron nitride substrates

    Science.gov (United States)

    Gao, Jian; Chow, Philippe K.; Thomas, Abhay V.; Lu, Toh-Ming; Borca-Tasciuc, Theodorian; Koratkar, Nikhil

    2014-09-01

    There is great scientific and technological interest in the use of chemical-vapor-deposition grown hexagonal boron nitride dielectric substrates for microelectronics applications. This interest stems from its superior heat spreading capability compared to silicon dioxide as well as the lack of surface dangling bonds or charge traps in hexagonal boron nitride which results in superior performance for graphene based electronics devices. However, surface heterogeneities, such as wrinkles or steps, are ubiquitous in such devices due to the fabrication and processing of chemical vapor deposition grown hexagonal boron nitride. In this study, we characterize the effect of such surface heterogeneities on the stability of copper interconnects used in microelectronics devices. Based on the theoretical thermo-physical properties of the constituent thin film layers, our simulations predict that copper interconnects deposited on hexagonal boron nitride can withstand ˜1.9 times more power than on a silicon dioxide substrate, due to its superior in-plane thermal conductivity. However, our electrical measurements reveal that copper wires melt and fail at consistently lower current densities on hexagonal boron nitride than on silicon dioxide. This was verified by testing in air as well as under vacuum. Scanning electron microscopy and atomic force microscopy characterization of the hexagonal boron nitride surface indicates that this contradictory result is due to nanoscale surface non-uniformities (i.e., wrinkles and steps) which are omnipresent in chemical-vapor-deposition grown and transferred hexagonal boron nitride films. Our results highlight the critical need for improved processing methods before large-scale microelectronics applications of chemical vapor deposition grown hexagonal boron nitride can be realized.

  1. Electronic properties of Mn-decorated silicene on hexagonal boron nitride

    KAUST Repository

    Kaloni, Thaneshwor P.

    2013-12-17

    We study silicene on hexagonal boron nitride, using first-principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50 meV band gap in the silicene. We further address the effect of Mn decoration by determining the onsite Hubbard interaction parameter, which turns out to differ significantly for decoration at the top and hollow sites. The induced magnetism in the system is analyzed in detail.

  2. Graphene on hexagonal boron nitride as a tunable hyperbolic metamaterial

    Science.gov (United States)

    Dai, S.; Ma, Q.; Liu, M. K.; Andersen, T.; Fei, Z.; Goldflam, M. D.; Wagner, M.; Watanabe, K.; Taniguchi, T.; Thiemens, M.; Keilmann, F.; Janssen, G. C. A. M.; Zhu, S.-E.; Jarillo-Herrero, P.; Fogler, M. M.; Basov, D. N.

    2015-08-01

    Hexagonal boron nitride (h-BN) is a natural hyperbolic material, in which the dielectric constants are the same in the basal plane (ɛt ≡ ɛx = ɛy) but have opposite signs (ɛtɛz phonon polaritons—collective modes that originate from the coupling between photons and electric dipoles in phonons. However, control of these hyperbolic phonon polaritons modes has remained challenging, mostly because their electrodynamic properties are dictated by the crystal lattice of h-BN. Here we show, by direct nano-infrared imaging, that these hyperbolic polaritons can be effectively modulated in a van der Waals heterostructure composed of monolayer graphene on h-BN. Tunability originates from the hybridization of surface plasmon polaritons in graphene with hyperbolic phonon polaritons in h-BN, so that the eigenmodes of the graphene/h-BN heterostructure are hyperbolic plasmon-phonon polaritons. The hyperbolic plasmon-phonon polaritons in graphene/h-BN suffer little from ohmic losses, making their propagation length 1.5-2.0 times greater than that of hyperbolic phonon polaritons in h-BN. The hyperbolic plasmon-phonon polaritons possess the combined virtues of surface plasmon polaritons in graphene and hyperbolic phonon polaritons in h-BN. Therefore, graphene/h-BN can be classified as an electromagnetic metamaterial as the resulting properties of these devices are not present in its constituent elements alone.

  3. Large-area monolayer hexagonal boron nitride on Pt foil.

    Science.gov (United States)

    Park, Ji-Hoon; Park, Jin Cheol; Yun, Seok Joon; Kim, Hyun; Luong, Dinh Hoa; Kim, Soo Min; Choi, Soo Ho; Yang, Woochul; Kong, Jing; Kim, Ki Kang; Lee, Young Hee

    2014-08-26

    Hexagonal boron nitride (h-BN) has recently been in the spotlight due to its numerous applications including its being an ideal substrate for two-dimensional electronics, a tunneling material for vertical tunneling devices, and a growth template for heterostructures. However, to obtain a large area of h-BN film while maintaining uniform thickness is still challenging and has not been realized. Here, we report the systematical study of h-BN growth on Pt foil by using low pressure chemical vapor deposition with a borazine source. The monolayer h-BN film was obtained over the whole Pt foil (2 × 5 cm(2)) under film. The total pressure and orientation of the Pt lattice plane are crucial parameters for thickness control. At high pressure (∼0.5 Torr), thick film was grown on Pt (111), and in contrast, thin film was grown on Pt (001). Our advances in monolayer h-BN growth will play an important role to further develop a high quality h-BN film that can be used for vertical tunneling, optoelectronic devices and growth templates for a variety of heterostructures. PMID:25094030

  4. Thermal transport across graphene and single layer hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jingchao, E-mail: zhang@unl.edu, E-mail: yyue@whu.edu.cn [Holland Computing Center, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States); Hong, Yang [Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States); Yue, Yanan, E-mail: zhang@unl.edu, E-mail: yyue@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, Wuhan, Hubei 430072 (China)

    2015-04-07

    As the dimensions of nanocircuits and nanoelectronics shrink, thermal energies are being generated in more confined spaces, making it extremely important and urgent to explore for efficient heat dissipation pathways. In this work, the phonon energy transport across graphene and hexagonal boron-nitride (h-BN) interface is studied using classic molecular dynamics simulations. Effects of temperature, interatomic bond strength, heat flux direction, and functionalization on interfacial thermal transport are investigated. It is found out that by hydrogenating graphene in the hybrid structure, the interfacial thermal resistance (R) between graphene and h-BN can be reduced by 76.3%, indicating an effective approach to manipulate the interfacial thermal transport. Improved in-plane/out-of-plane phonon couplings and broadened phonon channels are observed in the hydrogenated graphene system by analyzing its phonon power spectra. The reported R results monotonically decrease with temperature and interatomic bond strengths. No thermal rectification phenomenon is observed in this interfacial thermal transport. Results reported in this work give the fundamental knowledge on graphene and h-BN thermal transport and provide rational guidelines for next generation thermal interface material designs.

  5. Growth of atomically thin hexagonal boron nitride films by diffusion through a metal film and precipitation

    International Nuclear Information System (INIS)

    Atomically thin hexagonal boron nitride films were grown on both the top and bottom surfaces of a polycrystalline Co or Ni film by annealing a Co (Ni)/amorphous boron nitride/SiO2 structure in vacuum. This method of growing hexagonal boron nitride is much simpler than other methods, such as thermal chemical vapour deposition. B and N atoms diffuse through the metal film, although N is almost completely insoluble in both Co and Ni, and precipitation occurs at the topmost surface. The mass transport is considered to be caused by grain boundary diffusion.

  6. Charge carrier transport properties in layer structured hexagonal boron nitride

    Science.gov (United States)

    Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2014-10-01

    Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K). The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0)-α with α = 3.02, satisfying the two-dimensional (2D) carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1), which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  7. Hexagonal boron nitride for deep ultraviolet photonic devices

    International Nuclear Information System (INIS)

    This paper provides a brief overview on recent advances in tackling the doping and optical polarization issues involved in the development of high performance deep ultraviolet (DUV) light emitting devices. In particular, recent developments in the exploitation of a novel DUV emitter layer structure based on a hexagonal boron nitride (hBN) and AlGaN p–n junction and doping engineering to potentially overcome the intrinsic problem of low p-type conductivity (or low free hole concentration) in Al-rich AlGaN are summarized. By implementing the wide bandgap and highly conductive hBN p-type layer strategy in nitride DUV emitters, p-type conductivities and DUV transparency of the electron blocking layer and p-type contact layer will be dramatically increased. This will significantly improve the free hole injection and quantum efficiency, reduce the operating voltage and heat generation, and increase the device operating lifetime. The growth of undoped and Mg-doped p-type hBN via a metal organic chemical vapor deposition technique has been studied. Furthermore, p-hBN/n-AlGaN p–n junctions have been fabricated and characterized to demonstrate the feasibility and potential of p-hBN/n-AlGaN p–n heterostructure based DUV light emitting devices. Further improvements in material quality, p-type conductivity control and device processing procedures would enhance the properties of these p–n structures, which could ultimately pave the way towards the realization of high efficiency nitride DUV photonic devices. (invited article)

  8. Charge carrier transport properties in layer structured hexagonal boron nitride

    Directory of Open Access Journals (Sweden)

    T. C. Doan

    2014-10-01

    Full Text Available Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV, hexagonal boron nitride (hBN has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K. The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0−α with α = 3.02, satisfying the two-dimensional (2D carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1, which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  9. Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

    Science.gov (United States)

    Summerfield, Alex; Davies, Andrew; Cheng, Tin S.; Korolkov, Vladimir V.; Cho, YongJin; Mellor, Christopher J.; Foxon, C. Thomas; Khlobystov, Andrei N.; Watanabe, Kenji; Taniguchi, Takashi; Eaves, Laurence; Novikov, Sergei V.; Beton, Peter H.

    2016-01-01

    Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, highly anisotropic strain fields, and abrupt boundaries between regions with different moiré periods. These cracks can also be formed by modification of the layers with a local probe resulting in the contraction and physical displacement of graphene layers. The Raman spectra of regions with a large moiré period reveal split and shifted G and 2D peaks confirming the presence of strain. Our work demonstrates a new approach to the growth of epitaxial graphene and a means of generating and modifying strain in graphene. PMID:26928710

  10. Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

    Science.gov (United States)

    Alam, M. T.; Bresnehan, M. S.; Robinson, J. A.; Haque, M. A.

    2014-01-01

    Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m-1 K-1, is lower than the bulk basal plane value (390 W m-1 K-1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

  11. Non-linear excitation of quantum emitters in two-dimensional hexagonal boron nitride

    CERN Document Server

    Schell, Andreas W; Takashima, Hideaki; Takeuchi, Shigeki; Aharonovich, Igor

    2016-01-01

    Two-photon absorption is an important non-linear process employed for high resolution bio-imaging and non-linear optics. In this work we realize two-photon excitation of a quantum emitter embedded in a two-dimensional material. We examine defects in hexagonal boron nitride and show that the emitters exhibit similar spectral and quantum properties under one-photon and two-photon excitation. Furthermore, our findings are important to deploy two-dimensional hexagonal boron nitride for quantum non-linear photonic applications.

  12. Quasi free-standing silicene in a superlattice with hexagonal boron nitride

    KAUST Repository

    Kaloni, T. P.

    2013-11-12

    We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized in this superlattice. In particular, the Dirac cone of silicene is preserved. Due to the wide band gap of hexagonal boron nitride, the superlattice realizes the characteristic physical phenomena of free-standing silicene. In particular, we address by model calculations the combined effect of the intrinsic spin-orbit coupling and an external electric field, which induces a transition from a semimetal to a topological insulator and further to a band insulator.

  13. Discrete solitons and vortices in anisotropic hexagonal and honeycomb lattices

    Science.gov (United States)

    Hoq, Q. E.; Kevrekidis, P. G.; Bishop, A. R.

    2016-02-01

    In the present work, we consider the self-focusing discrete nonlinear Schrödinger equation on hexagonal and honeycomb lattice geometries. Our emphasis is on the study of the effects of anisotropy, motivated by the tunability afforded in recent optical and atomic physics experiments. We find that multi-soliton and discrete vortex states undergo destabilizing bifurcations as the relevant anisotropy control parameter is varied. We quantify these bifurcations by means of explicit analytical calculations of the solutions, as well as of their spectral linearization eigenvalues. Finally, we corroborate the relevant stability picture through direct numerical computations. In the latter, we observe the prototypical manifestation of these instabilities to be the spontaneous rearrangement of the solution, for larger values of the coupling, into localized waveforms typically centered over fewer sites than the original unstable structure. For weak coupling, the instability appears to result in a robust breathing of the relevant waveforms.

  14. Theory of thermal transport in multilayer hexagonal boron nitride and nanotubes

    Science.gov (United States)

    Lindsay, L.; Broido, D. A.

    2012-01-01

    We present a theory for the lattice thermal conductivity κL of single-walled boron nitride nanotubes (BNNTs) and multilayer hexagonal boron nitride (MLBN), which is based on an exact numerical solution of the phonon Boltzmann equation. Coupling between layers in MLBN and nanotube curvature in BNNTs each break a phonon scattering selection rule found in single-layer hexagonal boron nitride (SLBN), which reduces κL in these systems. We show that out-of-plane flexural phonons in MLBN and out-of-tube phonons in BNNTs provide large contributions to κL, qualitatively similar to multilayer graphene (MLG) and single-walled carbon nanotubes (SWCNTs). However, we find that the κL's in BNNTs and MLBN are considerably smaller compared to similar SWCNTs and MLG structures because of stronger anharmonic phonon scattering in the former. A large and strongly temperature-dependent isotope effect is found reflecting the interplay between anharmonic and isotope scattering phonons. Finally, we also demonstrate convergence of BNNTs into SLBN for large-diameter nanotubes and MLBN to bulk hexagonal boron nitride within a few layers.

  15. Boundary scattering in quasi-ballistic graphene/hexagonal boron nitride mesoscopic wires

    Science.gov (United States)

    Iguchi, Kazuyuki; Masubuchi, Satoru; Yamaguchi, Takehiro; Ohnuki, Masahiro; Watanabe, Kenji; Taniguchi, Takashi; Machida, Tomoki

    2012-02-01

    In a quasi-ballistic transport regime where the mean free path is larger than the width of conduction channel, diffusive boundary scattering results in an anomalous positive magnetoresistance due to a megnetic commensurability effect between cyclotron motion and sample width. In this work, we fabricate a high-mobility two terminal graphene mesoscopic wire on hexagonal boron nitride with a mean free path comparable to sample width ˜ 1 μm. Magnetoresistance of the graphene mesoscopic wire shows a peak structure at a magnetic field which scales with the ratio of the cyclotron radius Rc to the wire width w. The peak field increases with back-gate voltage as a consequence that the ratio w/Rc is modified due to the change in Rc. These results indicate the quasi-ballistic transport and diffusive boundary scattering in graphene on hexagonal boron nitride.

  16. The effect of the boron source composition ratio on the adsorption performance of hexagonal boron nitride without a template

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning, E-mail: zhangning5832@163.com; Zhang, Tong; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Cui, Xingyu

    2015-08-01

    An inexpensive boric acid (H{sub 3}BO{sub 3}) and borax (Na{sub 2}B{sub 4}O{sub 7}·10H{sub 2}O) mix was used as a source of boron with different composition ratios, and urea was used as a nitrogen source, in flowing ammonia atmosphere, for the preparation of hexagonal boron nitride (h-BN) with different micro-morphologies. Under a certain synthesis process, the effects of the molar ratio of borax and boric acid (or simply the boron source composition ratio for short) on the phase composition of the sample were studied; the work also explored the effect of boron source composition ratio on the micro-morphology, adsorption desorption isotherm and specific surface area of the h-BN powder. The main purpose of this work was to determine the optimum composition ratio of preparing spherical mesoporous h-BN and ensure that the micro-mechanism underpinning the formation of spherical mesoporous h-BN was understood. The results showed that at the optimum boron source composition ratio of 1:1, globular mesoporous spheres with a diameter of approximately 600–800 nm could be obtained with the highest pore volume and specific surface area (230.2 m{sup 2}/g). - Graphical abstract: Display Omitted - Highlights: • Spherical h-BN was synthesized by controlling the boron source composition ratio. • Without extra spherical template, solid Na{sub 2}O was equal to a spherical template. • At boron source composition ratio of 1:1, h-BN had best adsorption performance.

  17. Amplitude- and phase-resolved nano-spectral imaging of phonon polaritons in hexagonal boron nitride

    OpenAIRE

    Shi, Zhiwen; Bechte, Hans A.; Berweger, Samuel; Sun, Yinghui; Zeng, Bo; Jin, Chenhao; Chang, Henry; Martin, Michael C.; Raschke, Markus B.; Wang, Feng

    2015-01-01

    Phonon polaritons are quasiparticles resulting from strong coupling of photons with optical phonons. Excitation and control of these quasiparticles in 2D materials offer the opportunity to confine and transport light at the nanoscale. Here, we image the phonon polariton (PhP) spectral response in thin hexagonal boron nitride (hBN) crystals as a representative 2D material using amplitude- and phase-resolved near-field interferometry with broadband mid-IR synchrotron radiation. The large spectr...

  18. Charged defects in graphene and the ionicity of hexagonal boron nitride in direct images

    OpenAIRE

    Meyer, Jannik C.; Kurasch, Simon; Park, Hye Jin; Skakalova, Viera; Künzel, Daniela; Groß, Axel; Chuvilin, Andrey; Algara-Siller, Gerardo; Roth, Siegmar; Iwasaki, Takayuki; Starke, Ulrich; Smet, Jürgen; Kaiser, Ute

    2010-01-01

    We report on the detection and charge distribution analysis for nitrogen substitutional dopants in single layer graphene membranes by aberration-corrected high-resolution transmission electron microscopy (HRTEM). Further, we show that the ionicity of single-layer hexagonal boron nitride can be confirmed from direct images. For the first time, we demonstrate by a combination of HRTEM experiments and first-principles electronic structure calculations that adjustments to the atomic potentials du...

  19. Controlled Synthesis of ZrS2 Monolayer and Few Layers on Hexagonal Boron Nitride.

    Science.gov (United States)

    Zhang, Mei; Zhu, Yiming; Wang, Xinsheng; Feng, Qingliang; Qiao, Shanlin; Wen, Wen; Chen, Yanfeng; Cui, Menghua; Zhang, Jin; Cai, Congzhong; Xie, Liming

    2015-06-10

    Group IVB transition metal (Zr and Hf) dichalcogenide (TMD) monolayers can have higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMD monolayers. Here we report the synthesis of hexagonal ZrS2 monolayer and few layers on hexagonal boron nitride (BN) using ZrCl4 and S as precursors. The domain size of ZrS2 hexagons is around 1-3 μm. The number of layers of ZrS2 was controlled by tuning the evaporation temperature of ZrCl4. The stacking angle between ZrS2 and BN characterized by transmission electron microscopy shows a preferred stacking angle of near 0°. Field-effect transistors (FETs) fabricated on ZrS2 flakes showed n-type transport behavior with an estimated mobility of 0.1-1.1 cm(2) V(-1) s(-1). PMID:25996159

  20. Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride.

    Science.gov (United States)

    Li, Xuefei; Lu, Xiaobo; Li, Tiaoyang; Yang, Wei; Fang, Jianming; Zhang, Guangyu; Wu, Yanqing

    2015-11-24

    Existing in almost all electronic systems, the current noise spectral density, originated from the fluctuation of current, is by nature far more sensitive than the mean value of current, the most common characteristic parameter in electronic devices. Existing models on its origin of either carrier number or mobility are adopted in practically all electronic devices. For the past few decades, there has been no experimental evidence for direct association between 1/f noise and any other kinetic phenomena in solid state devices. Here, in the study of a van der Waals heterostructure of graphene on hexagonal BN superlattice, satellite Dirac points have been characterized through 1/f noise spectral density with pronounced local minima and asymmetric magnitude associated with its unique energy dispersion spectrum, which can only be revealed by scanning tunneling microscopy and low temperature magneto-transport measurement. More importantly, these features even emerge in the noise spectra of devices showing no minima in electric current, and are robust at all temperatures down to 4.3 K. In addition, graphene on h-BN exhibits a record low noise level of 1.6 × 10(-9) μm(2) Hz(-1) at 10 Hz, more than 1 order of magnitude lower than previous results for graphene on SiO2. Such an epitaxial van der Waals material system not only enables an unprecedented characterization of fundamentals in solids by 1/f noise, but its superior interface also provides a key and feasible solution for further improvement of the noise level for graphene devices. PMID:26435195

  1. Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunnelling microscopy

    Science.gov (United States)

    Wong, Dillon; Velasco, Jairo; Ju, Long; Lee, Juwon; Kahn, Salman; Tsai, Hsin-Zon; Germany, Chad; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael F.

    2015-11-01

    Defects play a key role in determining the properties and technological applications of nanoscale materials and, because they tend to be highly localized, characterizing them at the single-defect level is of particular importance. Scanning tunnelling microscopy has long been used to image the electronic structure of individual point defects in conductors, semiconductors and ultrathin films, but such single-defect electronic characterization remains an elusive goal for intrinsic bulk insulators. Here, we show that individual native defects in an intrinsic bulk hexagonal boron nitride insulator can be characterized and manipulated using a scanning tunnelling microscope. This would typically be impossible due to the lack of a conducting drain path for electrical current. We overcome this problem by using a graphene/boron nitride heterostructure, which exploits the atomically thin nature of graphene to allow the visualization of defect phenomena in the underlying bulk boron nitride. We observe three different defect structures that we attribute to defects within the bulk insulating boron nitride. Using scanning tunnelling spectroscopy we obtain charge and energy-level information for these boron nitride defect structures. We also show that it is possible to manipulate the defects through voltage pulses applied to the scanning tunnelling microscope tip.

  2. Flexible band gap tuning of hexagonal boron nitride sheets interconnected by acetylenic bonds.

    Science.gov (United States)

    Zhang, Hongyu; Luo, Youhua; Feng, Xiaojuan; Zhao, Lixia; Zhang, Meng

    2015-08-21

    The energetic and electronic properties of acetylenic-bond-interconnected hexagonal boron nitride sheets (BNyne), in which the number of rows of BN hexagonal rings (denoted as BN width) between neighboring arrays of acetylenic linkages increases consecutively, have been explored using first-principles calculations. Depending on the spatial position of B/N atoms with respect to the acetylenic linkages, there are two different types of configurations. The band structure features and band gap evolutions of BNyne structures as a function of the BN width can be categorized into two families, corresponding to two distinct types of configurations. In particular, for both types of BNyne structures, the band gap variations exhibit odd-even oscillating behavior depending on the BN width, which is related to the different symmetries of acetylenic chains in the unit cell. These results suggest that the embedded linear acetylenic chains can provide more flexibility for manipulation of the atomic and electronic properties of hexagonal boron nitride. These sp-sp(2) hybrid structures might promise importantly potential applications for developing nanoscale electronic and optoelectronic devices. PMID:26194068

  3. The influence of metal Mg on micro-morphology and crystallinity of spherical hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

    2015-08-15

    Highlights: • The action mechanism of Mg to the synthesis of spherical BN was explored. • The influence of Mg content on the crystallinity of h-BN powders was studied. • Even if not added any template, the spherical h-BN could be prepared. - Abstract: This search used the boric acid and borax as a source of boron, urea as a nitrogen source, Mg as metal catalyst, and thus prepared different micro-morphology and crystallinity hexagonal boron nitride powders under a flowing ammonia atmosphere at a nitriding temperature of 750 °C. The effect of Mg content on the crystallinity and micro-morphology of hexagonal boron nitride powders was studied, and the Mg action mechanism was explored. Without the added surfactant, the graphitization index (GI) was 6.87, and the diameter of the spherical h-BN was bigger. When the added Mg were 0.1 g, 0.3 g, 0.5 g and 0.7 g, the (GI) decreased to 6.04, 5.67, 4.62 and 4.84, respectively. When the Mg content was higher (0.9 g), GI value increased rapidly, and the crystallinity became bad. When the Mg content was 0.5 g, the dispersion of h-BN powders was at its optimum and refinement apparently, and the crystallinity at its highest.

  4. The influence of metal Mg on micro-morphology and crystallinity of spherical hexagonal boron nitride

    International Nuclear Information System (INIS)

    Highlights: • The action mechanism of Mg to the synthesis of spherical BN was explored. • The influence of Mg content on the crystallinity of h-BN powders was studied. • Even if not added any template, the spherical h-BN could be prepared. - Abstract: This search used the boric acid and borax as a source of boron, urea as a nitrogen source, Mg as metal catalyst, and thus prepared different micro-morphology and crystallinity hexagonal boron nitride powders under a flowing ammonia atmosphere at a nitriding temperature of 750 °C. The effect of Mg content on the crystallinity and micro-morphology of hexagonal boron nitride powders was studied, and the Mg action mechanism was explored. Without the added surfactant, the graphitization index (GI) was 6.87, and the diameter of the spherical h-BN was bigger. When the added Mg were 0.1 g, 0.3 g, 0.5 g and 0.7 g, the (GI) decreased to 6.04, 5.67, 4.62 and 4.84, respectively. When the Mg content was higher (0.9 g), GI value increased rapidly, and the crystallinity became bad. When the Mg content was 0.5 g, the dispersion of h-BN powders was at its optimum and refinement apparently, and the crystallinity at its highest

  5. Enhancement of thermoelectric efficiency by embedding hexagonal boron-nitride cells in zigzag graphene nanoribbons

    International Nuclear Information System (INIS)

    We study thermoelectric properties of zigzag graphene nanoribbon (ZGNR)–boron nitride (BN) junctions coupled to square electrodes using nonequilibrium Green function formalism in the linear response regime. The embedding of hexagonal BN cells into the ZGNR results in the change of the thermoelectric properties with the length and position of BN cells. The influence of the width variation on the electrical conductance and the Seebeck coefficient of the ZGNR–BN junctions is examined. Also, the coupling of asymmetric electrodes to the ZGNR–BN junctions and the pristine ZGNR is considered. It is observed that the asymmetric electrodes lead to the increase of the Seebeck coefficients of both structures, while the phonon thermal conductance is decreased because of the reduction of the phonon transport in inhomogeneous structures. Our results predict that the thermoelectric efficiency of the system is increased by embedding the hexagonal BN cells, as well as coupling to the asymmetric electrodes. (paper)

  6. Enhancement of thermoelectric efficiency by embedding hexagonal boron-nitride cells in zigzag graphene nanoribbons

    Science.gov (United States)

    Izadi Vishkayi, Sahar; Bagheri Tagani, Meysam; Rahimpour Soleimani, Hamid

    2015-06-01

    We study thermoelectric properties of zigzag graphene nanoribbon (ZGNR)-boron nitride (BN) junctions coupled to square electrodes using nonequilibrium Green function formalism in the linear response regime. The embedding of hexagonal BN cells into the ZGNR results in the change of the thermoelectric properties with the length and position of BN cells. The influence of the width variation on the electrical conductance and the Seebeck coefficient of the ZGNR-BN junctions is examined. Also, the coupling of asymmetric electrodes to the ZGNR-BN junctions and the pristine ZGNR is considered. It is observed that the asymmetric electrodes lead to the increase of the Seebeck coefficients of both structures, while the phonon thermal conductance is decreased because of the reduction of the phonon transport in inhomogeneous structures. Our results predict that the thermoelectric efficiency of the system is increased by embedding the hexagonal BN cells, as well as coupling to the asymmetric electrodes.

  7. Transport properties through hexagonal boron nitride clusters embedded in graphene nanoribbons

    Science.gov (United States)

    Silva, F. W. N.; Cruz-Silva, E.; Terrones, M.; Terrones, H.; Barros, E. B.

    2016-05-01

    First-principles calculations are employed in the study of the electronic and quantum transport properties of hexagonally shaped boron nitride (h-BN) clusters embedded in either zigzag or armchair graphene nanoribbons. Chemical doping of the h-BN cluster was taken into consideration by using carbon atoms to replace either the boron ({{{B}}}24{{{N}}}27{{{C}}}3) or the nitrogen ({{{B}}}27{{{N}}}24{{{C}}}3) sites in the central ring. While the quantum conductance of the system with zigzag edges is found to be spin-dependent, it was observed that the system with an armchair edge requires an electron imbalance in order to show a spin-dependent conductance. Furthermore, the possibility of molecular adsorption onto these doped systems is studied. The effects of the attached molecules to the quantum conductance shows the potential of these hybrid systems for molecular sensing applications.

  8. Chemical reaction of hexagonal boron nitride and graphite nanoclusters in mechanical milling systems

    Energy Technology Data Exchange (ETDEWEB)

    Muramatsu, Y.; Grush, M.; Callcott, T.A. [Univ. of Tennessee, Knoxville, TN (United States)] [and others

    1997-04-01

    Synthesis of boron-carbon-nitride (BCN) hybrid alloys has been attempted extensively by many researchers because the BCN alloys are considered an extremely hard material called {open_quotes}super diamond,{close_quotes} and the industrial application for wear-resistant materials is promising. A mechanical alloying (MA) method of hexagonal boron nitride (h-BN) with graphite has recently been studied to explore the industrial synthesis of the BCN alloys. To develop the MA method for the BCN alloy synthesis, it is necessary to confirm the chemical reaction processes in the mechanical milling systems and to identify the reaction products. Therefore, the authors have attempted to confirm the chemical reaction process of the h-BN and graphite in mechanical milling systems using x-ray absorption near edge structure (XANES) methods.

  9. Giant magnetoresistance and spin-filtering effects in zigzag graphene and hexagonal boron nitride based heterojunction

    International Nuclear Information System (INIS)

    The spin-dependent electronic transport properties of heterojunction constructed by bare zigzag graphene nanoribbon and hexagonal boron nitride nanoribbon are investigated by the non-equilibrium Green's function method in combination with the density functional theory. The results show that the giant magnetoresistance effect can be realized in the heterojunction, and the magnetoresistance ratio can reach to 106. Moreover, it is found that the heterojunction is a good spin-filtering device with nearly 100% spin filtering efficiency at a wide bias voltage region in both ferromagnetic and antiferromagnetic magnetic configurations. - Highlights: • The spin-dependent electronic transport of ZGNR and boron nitride based heterojunction. • The magnetoresistance ratio can reach to 106. • The perfect spin-filtering device with nearly 100% spin filtering efficiency

  10. Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Dauber, Jan; Stampfer, Christoph [JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen (Germany); Peter Grünberg Institute (PGI-8/9), Forschungszentrum Jülich, 52425 Jülich (Germany); Sagade, Abhay A.; Neumaier, Daniel [Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, 52074 Aachen (Germany); Oellers, Martin [JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen (Germany); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2015-05-11

    The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/√(Hz) making our graphene sensors highly interesting for industrial applications.

  11. Transport properties through hexagonal boron nitride clusters embedded in graphene nanoribbons.

    Science.gov (United States)

    Silva, F W N; Cruz-Silva, E; Terrones, M; Terrones, H; Barros, E B

    2016-05-01

    First-principles calculations are employed in the study of the electronic and quantum transport properties of hexagonally shaped boron nitride (h-BN) clusters embedded in either zigzag or armchair graphene nanoribbons. Chemical doping of the h-BN cluster was taken into consideration by using carbon atoms to replace either the boron ([Formula: see text]) or the nitrogen ([Formula: see text]) sites in the central ring. While the quantum conductance of the system with zigzag edges is found to be spin-dependent, it was observed that the system with an armchair edge requires an electron imbalance in order to show a spin-dependent conductance. Furthermore, the possibility of molecular adsorption onto these doped systems is studied. The effects of the attached molecules to the quantum conductance shows the potential of these hybrid systems for molecular sensing applications. PMID:27004996

  12. Atomic Resolution Transmission Electron Microscopy of Defects in Hexagonal Boron Nitride and Graphene

    Science.gov (United States)

    Gibb, Ashley; Alem, Nasim; Song, Chengyu; Ciston, Jim; Zettl, Alex

    2014-03-01

    Monolayer sheets of sp2-bonded materials such as graphene and hexagonal boron nitride (h-BN) have been studied extensively due to their properties including high mechanical strength, thermal conductivity, stability, interesting electronic properties, and potential for integration into novel devices. Understanding the atomic scale structure of defects in these materials is important because defects can significantly affect the physical properties in these materials. In particular, understanding the dynamics of these defects explains much about the material's stability. We have synthesized h-BN and graphene using low pressure chemical vapor deposition and imaged defects using atomic resolution aberration corrected transmission electron microscopy.

  13. Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal

    OpenAIRE

    Sharma, Subash; Kalita, Golap; Vishwakarma, Riteshkumar; Zulkifli, Zurita; Tanemura, Masaki

    2015-01-01

    In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H2-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crystal. In this study, we synthesized regular triangular-shaped h-BN crystals with the sizes around 2-10 μm on Cu foil by chemical vapor deposition (CVD). The etching behavior of individual h-BN crystal w...

  14. Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces

    OpenAIRE

    Gopalan, Devashish P.; Mende, Patrick C.; de la Barrera, Sergio C.; Dhingra, Shonali; Jun LI; Zhang, Kehao; Simonson, Nicholas A.; Robinson, Joshua A.; Lu, Ning; Wang, Qingxiao; Kim, Moon J.; D'Urso, Brian; Feenstra, Randall M.

    2015-01-01

    Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the experiment was to form hexagonal boron nitride (h-BN) on top of the graphene, such layers were not obtained. Rather, in isolated surface areas, h-BN is found to form micrometer-size islands that substitute for the graphene. Additionally, over nearly the entire surface, the properties of the layer that was originally...

  15. Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains

    OpenAIRE

    Qinke Wu; Ji-Hoon Park; Sangwoo Park; Seong Jun Jung; Hwansoo Suh; Noejung Park; Winadda Wongwiriyapan; Sungjoo Lee; Young Hee Lee; Young Jae Song

    2015-01-01

    A monolayer hexagonal boron nitride (h-BN) film with controllable domain morphology and domain size (varying from less than 1 μm to more than 100 μm) with uniform crystalline orientation was successfully synthesized by chemical vapor deposition (CVD). The key for this extremely large single crystalline domain size of a h-BN monolayer is a decrease in the density of nucleation seeds by increasing the hydrogen gas flow during the h-BN growth. Moreover, the well-defined shape of h-BN flakes can ...

  16. Effect of Structural Relaxation on the Electronic Structure of Graphene on Hexagonal Boron Nitride.

    Science.gov (United States)

    Slotman, G J; van Wijk, M M; Zhao, Pei-Liang; Fasolino, A; Katsnelson, M I; Yuan, Shengjun

    2015-10-30

    We performed calculations of electronic, optical, and transport properties of graphene on hexagonal boron nitride with realistic moiré patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be crucially important for electronic properties. We describe experimentally observed features such as additional Dirac points and the "Hofstadter butterfly" structure of energy levels in a magnetic field. We find that the electronic structure is sensitive to many-body renormalization of the local energy gap. PMID:26565485

  17. Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

    International Nuclear Information System (INIS)

    We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable

  18. Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Gaskell, J.; Fromhold, T. M.; Greenaway, M. T. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Eaves, L. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom); Novoselov, K. S.; Mishchenko, A. [School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom); Geim, A. K. [School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom); Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL (United Kingdom)

    2015-09-07

    We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

  19. Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

    Science.gov (United States)

    Gaskell, J.; Eaves, L.; Novoselov, K. S.; Mishchenko, A.; Geim, A. K.; Fromhold, T. M.; Greenaway, M. T.

    2015-09-01

    We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

  20. Enhancing Thermal Conductivity of Hexagonal Boron Nitride Filled Thermoplastics for Thermal Interface Management

    Science.gov (United States)

    Prindl, John

    Hexagonal Boron Nitride has been shown to enhance thermal conductivity in polymer composites more so than conventional ceramic fillers. However, to see a significant increase in thermal conductivity a high loading level of the advanced ceramic is often needed which can have an adverse effect on the mechanical behavior of the composite part. Applications for thermal management using thermal interface materials (TIM) continue to grow with thermoplastic injection molded parts emerging as an area for market growth. There is a growing need for published technical data in this particular area of application. In the current study, the thermal conductivity and mechanical behavior of hexagonal Boron Nitride (hBN) loaded thermoplastic composites is investigated. The main objectives of this work is produce a novel data package which illustrates the effects of hBN, loaded at high concentrations, across several different thermoplastic resins with the ultimate goal being to find a desirable formulation for specific thermal management applications. The desired properties for such applications being high thermal conductivity and high electrical resistivity with a minimal decrease in mechanical properties. Hexagonal BN cooling filler agglomerates were compounded into polypropylene (PP), nylon-6 (PA-6), and thermoplastic elastomer (TPE) via twin-screw extruder at 3 different loading levels. Injection molded samples were produced and characterized to show varying degrees of thermal conductivity and mechanical strength. Results from this research showed that in all cases, the thermal conductivity increased with increasing levels of hBN addition. The largest increases in thermal conductivity were seen in the PA-6 and TPE systems with the possible indication of exceeding the percolation threshold in the TPE system. This is hypothesized to occur due to the preferential migration of hBN to form conduction pathways around the elastomeric domains in the TPE matrix. Though TPE produced

  1. The preparation of high-adsorption, spherical, hexagonal boron nitride by template method

    International Nuclear Information System (INIS)

    Highlights: • The high-adsorption, spherical, hexagonal boron nitride powders were prepared. • The influence mechanism of template content on the micro-morphology and adsorption was explored. • At appropriate synthesis temperature, higher adsorption mesoporous spheres h-BN began to form. - Abstract: This research used low-cost boric acid and borax as a source of boron, urea as a nitrogen source, dodecyl-trimethyl ammonium chloride (DTAC) as a template, and thus prepared different micro-morphology hexagonal boron nitride powders under a flowing ammonia atmosphere at different nitriding temperatures. The effects of the template content and nitriding temperature on the micro-morphology of hexagonal boron nitride were studied and the formation mechanism analysed. The influences of the template content and nitriding temperature on adsorption performance were also explored. The results showed that at a nitriding temperature of 675 °C, the micro-morphologies of h-BN powder were orderly, inhomogeneous spherical, uniform spherical, beam, and pie-like with increasing template content. The micro-morphology was inhomogeneous spherical at a DTAC dose of 7.5%. The micro-morphology was uniform spherical at a DTAC dose of 10%. At a DTAC dose of 12%, the micro-morphology was a mixture of beam and pie-like shapes. At a certain template content (DTAC at 10%) and at lower nitriding temperatures (625 °C and 650 °C), spherical shell structures with surface subsidence began to form. The porous spheres would appear at a nitriding temperature of 675 °C, and the ball diameter thus formed was approximately 500–600 nm. The ball diameter was about 600–700 nm when the nitriding temperature was 700 °C. At a nitriding temperature of 725 °C, the ball diameter was between 800 and 1000 nm and sintering necking started to form. When the relative pressure was higher, previously closed pores opened and connected with the outside world: the adsorption then increased significantly. The

  2. The preparation of high-adsorption, spherical, hexagonal boron nitride by template method

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

    2014-11-15

    Highlights: • The high-adsorption, spherical, hexagonal boron nitride powders were prepared. • The influence mechanism of template content on the micro-morphology and adsorption was explored. • At appropriate synthesis temperature, higher adsorption mesoporous spheres h-BN began to form. - Abstract: This research used low-cost boric acid and borax as a source of boron, urea as a nitrogen source, dodecyl-trimethyl ammonium chloride (DTAC) as a template, and thus prepared different micro-morphology hexagonal boron nitride powders under a flowing ammonia atmosphere at different nitriding temperatures. The effects of the template content and nitriding temperature on the micro-morphology of hexagonal boron nitride were studied and the formation mechanism analysed. The influences of the template content and nitriding temperature on adsorption performance were also explored. The results showed that at a nitriding temperature of 675 °C, the micro-morphologies of h-BN powder were orderly, inhomogeneous spherical, uniform spherical, beam, and pie-like with increasing template content. The micro-morphology was inhomogeneous spherical at a DTAC dose of 7.5%. The micro-morphology was uniform spherical at a DTAC dose of 10%. At a DTAC dose of 12%, the micro-morphology was a mixture of beam and pie-like shapes. At a certain template content (DTAC at 10%) and at lower nitriding temperatures (625 °C and 650 °C), spherical shell structures with surface subsidence began to form. The porous spheres would appear at a nitriding temperature of 675 °C, and the ball diameter thus formed was approximately 500–600 nm. The ball diameter was about 600–700 nm when the nitriding temperature was 700 °C. At a nitriding temperature of 725 °C, the ball diameter was between 800 and 1000 nm and sintering necking started to form. When the relative pressure was higher, previously closed pores opened and connected with the outside world: the adsorption then increased significantly. The

  3. Photoluminescence of hexagonal boron nitride: effect of surface oxidation under UV-laser irradiation

    CERN Document Server

    Museur, Luc; Petitet, Jean-Pierre; Michel, Jean Pierre; Kanaev, Andrei V

    2008-01-01

    We report on the UV laser induced fluorescence of hexagonal boron nitride (h-BN) following nanosecond laser irradiation of the surface under vacuum and in different environments of nitrogen gas and ambient air. The observed fluorescence bands are tentatively ascribed to impurity and mono (VN), or multiple (m-VN with m = 2 or 3) nitrogen vacancies. A structured fluorescence band between 300 nm and 350 nm is assigned to impurity-band transition and its complex lineshape is attributed to phonon replicas. An additional band at 340 nm, assigned to VN vacancies on surface, is observed under vacuum and quenched by adsorbed molecular oxygen. UV-irradiation of h-BN under vacuum results in a broad asymmetric fluorescence at ~400 nm assigned to m-VN vacancies; further irradiation breaks more B-N bonds enriching the surface with elemental boron. However, no boron deposit appears under irradiation of samples in ambient atmosphere. This effect is explained by oxygen healing of radiation-induced surface defects. Formation o...

  4. Anisotropic mechanical properties of hexagonal SiC sheet: a molecular dynamics study

    Science.gov (United States)

    Yu, Ming; Liu, Emily; Zhang, Congyan

    2015-03-01

    The anisotropic mechanical properties of hexagonal SiC sheet have been studied using an efficient quantum mechanics molecular dynamics scheme based on a robust semi-empirical Hamiltonian (refereed as SCED-LCAO) [PRB 74, 15540; PHYSE 42, 1]. It was found that the SiC sheet could sustain the heavy load up to about 20 %. In particular, it was found that the SiC sheet also shows large difference in the strain direction. It will quickly crack after 20 % of strain in armchair the direction, but it will be slowly destroyed after 30% in the zigzag direction, indicating the anisotropic nature of the mechanical properties of the SiC sheet. The nominal and 2D membrane stresses will be analyzed, from where we will obtain the 2D Young's modulus at infinitesimal strain and the third-order (effective nonlinear) elastic modulus for the SiC sheet. The detail results and discussions will be reported in the presentation.

  5. Vertically self-ordered orientation of nanocrystalline hexagonal boron nitride thin films for enhanced thermal characteristics

    Science.gov (United States)

    Cometto, Olivier; Sun, Bo; Tsang, Siu Hon; Huang, Xi; Koh, Yee Kan; Teo, Edwin Hang Tong

    2015-11-01

    Vertically self-ordered hexagonal boron nitride (ordered h-BN) is a highly ordered turbostratic BN (t-BN) material similar to hexagonal BN, with its planar structure perpendicularly oriented to the substrate. The ordered h-BN thin films were grown using a High Power Impulse Magnetron Sputtering (HiPIMS) system with a lanthanum hexaboride (LaB6) target reactively sputtered in nitrogen gas. The best vertical alignment was obtained at room temperature, with a grounded bias and a HiPIMS peak power density of 60 W cm-2. Even though the film contains up to 7.5 at% lanthanum, it retains its highly insulative properties and it was observed that an increase in compressive stress is correlated to an increase in film ordering quality. Importantly, the thermal conductivity of vertically ordered h-BN is considerably high at 5.1 W m-1 K-1. The favourable thermal conductivity coupled with the dielectric properties of this novel material and the low temperature growth could outperform SiO2 in high power density electronic applications.Vertically self-ordered hexagonal boron nitride (ordered h-BN) is a highly ordered turbostratic BN (t-BN) material similar to hexagonal BN, with its planar structure perpendicularly oriented to the substrate. The ordered h-BN thin films were grown using a High Power Impulse Magnetron Sputtering (HiPIMS) system with a lanthanum hexaboride (LaB6) target reactively sputtered in nitrogen gas. The best vertical alignment was obtained at room temperature, with a grounded bias and a HiPIMS peak power density of 60 W cm-2. Even though the film contains up to 7.5 at% lanthanum, it retains its highly insulative properties and it was observed that an increase in compressive stress is correlated to an increase in film ordering quality. Importantly, the thermal conductivity of vertically ordered h-BN is considerably high at 5.1 W m-1 K-1. The favourable thermal conductivity coupled with the dielectric properties of this novel material and the low temperature

  6. Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride

    Science.gov (United States)

    Jo, Insun; Pettes, Michael Thompson; Kim, Jaehyun; Watanabe, Kenji; Taniguchi, Takashi; Yao, Zhen; Shi, Li

    2013-02-01

    The thermal conductivity of suspended few-layer hexagonal boron nitride (h-BN) was measured using a micro-bridge device with built-in resistance thermometers. Based on the measured thermal resistance values of 11-12 atomic layer h-BN samples with suspended length ranging between 3 and 7.5 um, the room-temperature thermal conductivity of a 11-layer sample was found to be about 360 Wm-1K-1, approaching the basal plane value reported for bulk h-BN. The presence of a polymer residue layer on the sample surface was found to decrease the thermal conductivity of a 5-layer h-BN sample to be about 250 Wm-1K-1 at 300 K. Thermal conductivities for both the 5 layer and the 11 layer samples are suppressed at low temperatures, suggesting increasing scattering of low frequency phonons in thin h-BN samples by polymer residue.

  7. The interaction between hexagonal boron nitride and water from first principles

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Yanbin; Aluru, Narayana R., E-mail: aluru@illinois.edu [Department of Mechanical Science and Engineering, Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States); Wagner, Lucas K. [Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080 (United States)

    2015-06-21

    The use of hexagonal boron nitride (h-BN) in microfluidic and nanofluidic applications requires a fundamental understanding of the interaction between water and the h-BN surface. A crucial component of the interaction is the binding energy, which is sensitive to the treatment of electron correlation. In this work, we use state of the art quantum Monte Carlo and quantum chemistry techniques to compute the binding energy. Compared to high-level many-body theory, we found that the second-order Møller-Plesset perturbation theory captures the interaction accurately and can thus be used to develop force field parameters between h-BN and water for use in atomic scale simulations. On the contrary, density functional theory with standard dispersion corrections tends to overestimate the binding energy by approximately 75%.

  8. Emission and propagation of hyperbolic phonon polaritons in hexagonal boron nitride

    Science.gov (United States)

    Dai, Siyuan; Ma, Qiong; Yang, Yafang; Rosenfeld, Jeremy; Goldflam, Michael; McLeod, Alex; Andersen, Trond; Fei, Zhe; Liu, Mengkun; Sun, Zhiyuan; Shao, Yinming; Watanabe, Kenji; Taniguchi, Takashi; Thiemens, Mark; Keilmann, Fritz; Jarillo-Herrero, Pablo; Fogler, Michael; Basov, D. N.

    Using scattering-type scanning near-field optical microscope (s-SNOM), we studied various kinds of emission and propagation of hyperbolic phonon polaritons (HP2s) in hexagonal boron nitride (hBN). The systematic study via real-space nano-imaging reveals the emission mechanisms and propagating properties of HP2s excited by crystal edges, artificial structures, surface defects and impurities. Compared with traditional s-SNOM tip emitter, the polaritons from new emitters reported in this work possess longer propagation length and can be artificially manipulated on the hBN surface. Our work may benefit the future applications and engineering of HP2s using convenient emitters which are analogous to collective modes in other materials.

  9. Imaging of Anomalous Internal Reflections of Hyperbolic Phonon-Polaritons in Hexagonal Boron Nitride

    Science.gov (United States)

    Giles, Alexander J.; Dai, Siyuan; Glembocki, Orest J.; Kretinin, Andrey V.; Sun, Zhiyuan; Ellis, Chase T.; Tischler, Joseph G.; Taniguchi, Takashi; Watanabe, Kenji; Fogler, Michael M.; Novoselov, Kostya S.; Basov, Dimitri. N.; Caldwell, Joshua D.

    2016-06-01

    We use scanning near-field optical microscopy to study the response of hexagonal boron nitride nanocones at infrared frequencies, where this material behaves as a hyperbolic medium. The obtained images are dominated by a series of hot rings that occur on the sloped sidewalls of the nanocones. The ring positions depend on the incident laser frequency and the nanocone shape. Both dependences are consistent with directional propagation of hyperbolic phonon polariton rays that are launched at the edges and zigzag through the interior of the nanocones, sustaining multiple internal reflections off the sidewalls. Additionally, we observe a strong overall enhancement of the near-field signal at discrete resonance frequencies. These resonances attest to low dielectric losses that permit coherent standing waves of the sub-diffractional polaritons to form. We comment on potential applications of such shape-dependent resonances and the field concentration at the hot rings.

  10. Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kamalakar, M. Venkata, E-mail: venkata.mutta@chalmers.se; Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P., E-mail: saroj.dash@chalmers.se [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg (Sweden)

    2014-11-24

    Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime ≈500 ps and spin diffusion length ≈1.6 μm in graphene with tunnel spin polarization ≈11% at 100 K. The electrical and spin transport measurements at different injection bias current and gate voltages confirm tunnel spin injection through h-BN barrier. These results open up possibilities for implementation of large area CVD h-BN in spintronic technologies.

  11. Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

    Science.gov (United States)

    Jang, Sung Kyu; Youn, Jiyoun; Song, Young Jae; Lee, Sungjoo

    2016-07-01

    Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a critical partial pressure of the borazine precursor, whereas a thick h-BN layer (thicker than a critical thickness of 10 nm) was grown beyond a critical partial pressure. An interesting coincidence of a critical thickness of 10 nm was identified in both the CVD growth behavior and in the breakdown electric field strength and leakage current mechanism, indicating that the electrical properties of the CVD h-BN film depended significantly on the film growth mode and the resultant film quality.

  12. High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

    International Nuclear Information System (INIS)

    A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V−1, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices

  13. High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

    Energy Technology Data Exchange (ETDEWEB)

    Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Sup Choi, Min [Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Hee Choi, Jun [Frontier Research Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin, Gyeonggi-do 446-711 (Korea, Republic of); Zhong, Jianqiang; Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 (Singapore); Jong Yoo, Won, E-mail: yoowj@skku.edu [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

    2014-02-03

    A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

  14. Exploring carrier transport phenomena in a CVD-assembled graphene FET on hexagonal boron nitride

    International Nuclear Information System (INIS)

    The supporting substrate plays a crucial role in preserving the superb electrical characteristics of an atomically thin 2D carbon system. We explore carrier transport behavior in a chemical-vapor-deposition- (CVD-) assembled graphene monolayer on hexagonal boron nitride (h-BN) substrate. Graphene-channel field-effect transistors (GFETs) were fabricated on ultra-thin h-BN multilayers to screen out carrier scattering from the underlying SiO2 substrate. To explore the transport phenomena, we use three different approaches to extract carrier mobility, namely, effective carrier mobility (μeff), intrinsic carrier mobility (μ), and field-effect mobility (μFE). A comparative study has been conducted based on the electrical characterization results, uncovering the impacts of supporting substrate material and device geometry scaling on carrier mobility in GFETs with CVD-assembled graphene as the active channel. (paper)

  15. Contact-induced spin polarization of monolayer hexagonal boron nitride on Ni(111)

    International Nuclear Information System (INIS)

    Hexagonal boron nitride (h-BN) is a promising barrier material for graphene spintronics. In this Letter, spin-polarized metastable de-excitation spectroscopy (SPMDS) is employed to study the spin-dependent electronic structure of monolayer h-BN/Ni(111). The extreme surface sensitivity of SPMDS enables us to elucidate a partial filling of the in-gap states of h-BN without any superposition of Ni 3d signals. The in-gap states are shown to have a considerable spin polarization parallel to the majority spin of Ni. The positive spin polarization is attributed to the π-d hybridization and the effective spin transfer to the nitrogen atoms at the h-BN/Ni(111) interface

  16. Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

    International Nuclear Information System (INIS)

    Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime ≈500 ps and spin diffusion length ≈1.6 μm in graphene with tunnel spin polarization ≈11% at 100 K. The electrical and spin transport measurements at different injection bias current and gate voltages confirm tunnel spin injection through h-BN barrier. These results open up possibilities for implementation of large area CVD h-BN in spintronic technologies

  17. Engineering and localization of quantum emitters in large hexagonal boron nitride layers

    CERN Document Server

    Choi, Sumin; ElBadawi, Christopher; Lobo, Charlene; Wang, Xuewen; Juodkazis, Saulius; Seniutinas, Gediminas; Toth, Milos; Aharonovich, Igor

    2016-01-01

    Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material that has recently emerged as promising platform for quantum photonics experiments. In this work we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of microns wide) of hBN. The emitters can be activated in as-grown hBN by electron irradiation or high temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at edges of the flakes, unlike most luminescent point defects in 3D materials. Our results constitute an important step on the road map of deploying hBN in nanophotonics applications.

  18. A cohesive law for interfaces in graphene/hexagonal boron nitride heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Chenxi [Department of Mechanical and Aerospace Engineering, University of Miami, Coral Gables, Florida 33146 (United States); Lou, Jun [Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77251 (United States); Song, Jizhou, E-mail: jzsong@gmail.com [Department of Engineering Mechanics and Soft Matter Research Center, Zhejiang University, Hangzhou 310027 (China)

    2014-04-14

    Graphene/hexagonal boron nitride (h-BN) heterostructure has showed great potential to improve the performance of graphene device. We have established the cohesive law for interfaces between graphene and monolayer or multi-layer h-BN based on the van der Waals force. The cohesive energy and cohesive strength are given in terms of area density of atoms on corresponding layers, number of layers, and parameters in the van der Waals force. It is found that the cohesive law in the graphene/multi-layer h-BN is dominated by the three h-BN layers which are closest to the graphene. The approximate solution is also obtained to simplify the expression of cohesive law. These results are very useful to study the deformation of graphene/h-BN heterostructure, which may have significant impacts on the performance and reliability of the graphene devices especially in the areas of emerging applications such as stretchable electronics.

  19. Decoupled electron and phonon transports in hexagonal boron nitride-silicene bilayer heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Yongqing; Pei, Qing-Xiang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg; Zhang, Gang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg; Zhang, Yong-Wei [Institute of High Performance Computing, A*STAR, Singapore 138632 (Singapore)

    2016-02-14

    Calculations based on the density functional theory and empirical molecular dynamics are performed to investigate interlayer interaction, electronic structure and thermal transport of a bilayer heterostructure consisting of silicene and hexagonal boron nitride (h-BN). In this heterostructure, the two layers are found to interact weakly via a non-covalent binding. As a result, the Dirac cone of silicene is preserved with the Dirac cone point being located exactly at the Fermi level, and only a small amount of electrons are transferred from h-BN to silicene, suggesting that silicene dominates the electronic transport. Molecular dynamics calculation results demonstrate that the heat current along h-BN is six times of that along silicene, suggesting that h-BN dominates the thermal transport. This decoupled role of h-BN and silicene in thermal and electronic transport suggests that the BN-silicene bilayer heterostructure is promising for thermoelectric applications.

  20. Evidence for Defect-Mediated Tunneling in Hexagonal Boron Nitride-Based Junctions.

    Science.gov (United States)

    Chandni, U; Watanabe, K; Taniguchi, T; Eisenstein, J P

    2015-11-11

    We investigate electron tunneling through atomically thin layers of hexagonal boron nitride (hBN). Metal (Cr/Au) and semimetal (graphite) counter-electrodes are employed. While the direct tunneling resistance increases nearly exponentially with barrier thickness as expected, the thicker junctions also exhibit clear signatures of Coulomb blockade, including strong suppression of the tunnel current around zero bias and step-like features in the current at larger biases. The voltage separation of these steps suggests that single-electron charging of nanometer-scale defects in the hBN barrier layer are responsible for these signatures. We find that annealing the metal-hBN-metal junctions removes these defects and the Coulomb blockade signatures in the tunneling current. PMID:26509431

  1. The electronic structure of graphene tuned by hexagonal boron nitrogen layers: Semimetal-semiconductor transition

    Science.gov (United States)

    Liu, Ming-Yang; Chen, Qing-Yuan; Ma, Tai; He, Yao; Cao, Chao

    2016-05-01

    The electronic structure of graphene and hexagonal boron nitrogen (G/h-BN) systems have been carefully investigated using the pseudo-potential plane-wave within density functional theory (DFT) framework. We find that the stacking geometries and interlayer distances significantly affect the electronic structure of G/h-BN systems. By studying four stacking geometries, we conclude that the monolayer G/h-BN systems should possess metallic electronic properties. The monolayer G/h-BN systems can be transited from metallicity to semiconductor by increasing h-BN layers. It reveals that the alteration of interlayer distances 2.50-3.50 Å can obtain the metal-semiconductor-semimetal variation and a tunable band gap for G/h-BN composite systems. The band dispersion along K-H direction is analogous to the band of rhombohedral graphite when the G/h-BN systems are semiconducting.

  2. Investigation of hexagonal boron nitride as an atomically thin corrosion passivation coating in aqueous solution

    Science.gov (United States)

    Zhang, Jing; Yang, Yingchao; Lou, Jun

    2016-09-01

    Hexagonal boron nitride (h-BN) atomic layers were utilized as a passivation coating in this study. A large-area continuous h-BN thin film was grown on nickel foil using a chemical vapor deposition method and then transferred onto sputtered copper as a corrosion passivation coating. The corrosion passivation performance in a Na2SO4 solution of bare and coated copper was investigated by electrochemical methods including cyclic voltammetry (CV), Tafel polarization and electrochemical impedance spectroscopy (EIS). CV and Tafel analysis indicate that the h-BN coating could effectively suppress the anodic dissolution of copper. The EIS fitting result suggests that defects are the dominant leakage source on h-BN films, and improved anti-corrosion performances could be achieved by further passivating these defects.

  3. Role of hexagonal boron nitride in protecting ferromagnetic nanostructures from oxidation

    Science.gov (United States)

    Zihlmann, Simon; Makk, Péter; Vaz, Carlos A. F.; Schönenberger, Christian

    2016-03-01

    Ferromagnetic contacts are widely used to inject spin polarized currents into non-magnetic materials such as semiconductors or 2-dimensional materials like graphene. In these systems, oxidation of the ferromagnetic materials poses an intrinsic limitation on device performance. Here we investigate the role of ex situ transferred chemical vapour deposited hexagonal boron nitride (hBN) as an oxidation barrier for nanostructured cobalt and permalloy electrodes. The chemical state of the ferromagnets was investigated using x-ray photoemission electron microscopy because of its high sensitivity and lateral resolution. We have compared the oxide thickness formed on ferromagnetic nanostructures covered by hBN to uncovered reference structures. Our results show that hBN reduces the oxidation rate of ferromagnetic nanostructures suggesting that it could be used as an ultra-thin protection layer in future spintronic devices.

  4. Surface functionalization of hexagonal boron nitride and its effect on the structure and performance of composites

    Science.gov (United States)

    Jin, Wenqin; Zhang, Wei; Gao, Yuwen; Liang, Guozheng; Gu, Aijuan; Yuan, Li

    2013-04-01

    A new organized hexagonal boron nitride (OhBN) with significantly increased amount of amine groups was synthesized, and characterized by Fourier Transform Infrared (FTIR), X-ray Photoelectron Spectroscopy (XPS), Thermogravimetric (TG) analysis, UV-vis Transmittance Spectra, Transmission Electron Microscope (TEM) and the potentiometric titration. The content of amine groups for OhBN is about 5 times of that for original hexagonal boron nitride (hBN). Based on the preparation of OhBN, new composites consisting of OhBN and bismaleimide (BD) resin were developed, which show greatly improved integrated performance (including dynamic mechanical, dielectric and thermal properties) compared with BD resin and the hBN/BD composites. In the case of the OhBN/BD composite with 15 wt% OhBN, its storage modulus, dielectric loss, thermal conductivity and coefficient of thermal expansion are about 1.2, 0.56, 1.11 and 0.92 times of the corresponding values of hBN/BD composite, respectively; moreover, the glass transition temperature of the former is 15 °C higher than that of the latter. These interesting results suggest that the integrated performance of the composites is closely related to the surface nature of the fillers because the change in the surface nature not only varies the chemical structure, free volume and crosslinking density of the composite, but also determines the interfacial nature between inorganic fillers and the resin matrix. This investigation demonstrates that the method proposed herein provides a new approach to prepare organized inorganic fillers as well as corresponding composites with controlled structure and expected performances for cutting-edge industries.

  5. Synthesis and characterization of nanocrystalline hexagonal boron carbo-nitride under high temperature and high pressure

    International Nuclear Information System (INIS)

    A study of the synthesis of hexagonal boron carbo-nitride (h-BCN) compounds via a two-step high-temperature and high-pressure (HTHP) technique using melamine (C3N6H6) and boron oxide (B2O3) as raw materials is presented. An amorphous BCN precursor was prepared at 1000 K under vacuum in a resistance furnace and then single-phase h-BCN nanocrystalline was synthesized at 1600 K and 5.1 GPa in a multi-anvil apparatus. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicated that the final products were pure h-BCN crystals with the lattice constants a 0.2510 nm and c = 0.6690 nm. The average grain size was about 150 nm. X-ray photoelectron spectroscopy (XPS) results confirmed the occurrence of bonding between C-C, C-N, C-B and N-B atoms. Raman scattering analysis suggested that there were three strong Raman bands centered at 1359, 1596 and 1617 cm-1, respectively. The band at 1617 cm-1 was considered to be consistent with the characteristic Raman peak of h-BCN

  6. Dislocations in stacking and commensurate-incommensurate phase transition in bilayer graphene and hexagonal boron nitride

    Science.gov (United States)

    Lebedeva, Irina V.; Lebedev, Alexander V.; Popov, Andrey M.; Knizhnik, Andrey A.

    2016-06-01

    Dislocations corresponding to a change of stacking in two-dimensional hexagonal bilayers, graphene and boron nitride, and associated with boundaries between commensurate domains are investigated using the two-chain Frenkel-Kontorova model on top of ab initio calculations. Structural transformations of bilayers in which the bottom layer is stretched and the upper one is left to relax freely are considered for gradually increased elongation of the bottom layer. Formation energies of dislocations, dislocation width, and orientation of the boundary between commensurate domains are analyzed depending on the magnitude and direction of elongation. The second-order phase transition from the commensurate phase to the incommensurate one with multiple dislocations is predicted to take place at some critical elongation. The order parameter for this transition corresponds to the density of dislocations, which grows continuously upon increasing the elongation of the bottom layer above the critical value. In graphene and metastable boron nitride with the layers aligned in the same direction, where elementary dislocations are partial, this transition, however, is preceded by formation of the first dislocation at the elongation smaller than the critical one. The phase diagrams including this intermediate state are plotted in coordinates of the magnitude and direction of elongation of the bottom layer.

  7. Two-dimensional hexagonal boron nitride as lateral heat spreader in electrically insulating packaging

    Science.gov (United States)

    Bao, Jie; Edwards, Michael; Huang, Shirong; Zhang, Yong; Fu, Yifeng; Lu, Xiuzhen; Yuan, Zhichao; Jeppson, Kjell; Liu, Johan

    2016-07-01

    The need for electrically insulating materials with a high in-plane thermal conductivity for lateral heat spreading applications in electronic devices has intensified studies of layered hexagonal boron nitride (h-BN) films. Due to its physicochemical properties, h-BN can be utilised in power dissipating devices such as an electrically insulating heat spreader material for laterally redistributing the heat from hotspots caused by locally excessive heat flux densities. In this study, two types of boron nitride based heat spreader test structures have been assembled and evaluated for heat dissipation. The test structures separately utilised a few-layer h-BN film with and without graphene enhancement drop coated onto the hotspot test structure. The influence of the h-BN heat spreader films on the temperature distribution across the surface of the hotspot test structure was studied at a range of heat flux densities through the hotspot. It was found that the graphene-enhanced h-BN film reduced the hotspot temperature by about 8–10 °C at a 1000 W cm‑2 heat flux density, a temperature decrease significantly larger than for h-BN film without graphene enhancement. Finite element simulations of the h-BN film predict that further improvements in heat spreading ability are possible if the thermal contact resistance between the film and test chip are minimised.

  8. Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux technique

    Science.gov (United States)

    Edgar, J. H.; Hoffman, T. B.; Clubine, B.; Currie, M.; Du, X. Z.; Lin, J. Y.; Jiang, H. X.

    2014-10-01

    The optical and physical properties of hexagonal boron nitride single crystals grown from a molten metal solution are reported. The hBN crystals were grown by precipitation from a nickel-chromium flux with a boron nitride source, by slowly cooling from 1500 °C at 2-4 °C/h under a nitrogen flow at atmospheric pressure. The hBN crystals formed on the surface of the flux with an apparent crystal size up to 1-2 mm in diameter. Individual grains were as large as 100-200 μm across. Typically, the flakes removed from the metal were 6-20 μm thick. Optical absorption measurements suggest a bandgap of 5.8 eV by neglecting the binding energy of excitons in hBN. The highest energy photoluminescence peak was at 5.75 eV at room temperature. The hBN crystals typically had a pit density of 5×106 cm-2 after etching in a molten eutectic mixture of potassium hydroxide and sodium hydroxide. The quality of these crystals suggests they are suitable as substrates for two dimensional materials such as graphene and gallium nitride based devices.

  9. Synthesis of few-layer, large area hexagonal-boron nitride by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Glavin, Nicholas R. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States); Jespersen, Michael L. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); University of Dayton Research Institute, 300 College Park, Dayton, OH 45469 (United States); Check, Michael H. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); Hu, Jianjun [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); University of Dayton Research Institute, 300 College Park, Dayton, OH 45469 (United States); Hilton, Al M. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); Wyle Laboratories, Dayton, OH 45433 (United States); Fisher, Timothy S. [School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States); Voevodin, Andrey A. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States)

    2014-12-01

    Pulsed laser deposition (PLD) has been investigated as a technique for synthesis of ultra-thin, few-layer hexagonal boron nitride (h-BN) thin films on crystalline highly ordered pyrolytic graphite (HOPG) and sapphire (0001) substrates. The plasma-based processing technique allows for increased excitations of deposited atoms due to background nitrogen gas collisional ionizations and extended resonance time of the energetic species presence at the condensation surface. These processes permit growth of thin, polycrystalline h-BN at 700 °C, a much lower temperature than that required by traditional growth methods. Analysis of the as-deposited films reveals epitaxial-like growth on the nearly lattice matched HOPG substrate, resulting in a polycrystalline h-BN film, and amorphous BN (a-BN) on the sapphire substrates, both with thicknesses of 1.5–2 nm. Stoichiometric films with boron-to-nitrogen ratios of unity were achieved by adjusting the background pressure within the deposition chamber and distance between the target and substrate. The reduction in deposition temperature and formation of stoichiometric, large-area h-BN films by PLD provide a process that is easily scaled-up for two-dimensional dielectric material synthesis and also present a possibility to produce very thin and uniform a-BN. - Highlights: • PLD was used to synthesize boron nitride thin films on HOPG and sapphire substrates. • Lattice matched substrate allowed for formation of polycrystalline h-BN. • Nitrogen gas pressure directly controlled film chemistry and structure. • Technique allows for ultrathin, uniform films at reduced processing temperatures.

  10. Dielectric and thermal properties of isotactic polypropylene/hexagonal boron nitride composites for high-frequency applications

    International Nuclear Information System (INIS)

    Highlights: • The degree of orientation of the hBN could be controlled by the fabrication process. • The dielectric constants of composites ranged between 2.25 and 3.39. • The dielectric loss of composites was on the order of 10−4 for all compositions. • The thermal conductivity were improved by controlling orientation of hBN. - Abstract: Dielectric composites aimed for high frequency applications were prepared by using anisotropic hexagonal boron nitride (hBN) particles as a fillers and isotactic polypropylene (iPP) as polymer matrix. Dielectric and thermal properties of the composites were studied, focusing on the filler orientation in the plate-shape specimens and filler concentration up to 40 vol%. The degree of orientation of the filler was controlled by the composite fabrication process. Hot-pressing gave relatively random orientation of the filler in the matrix, while injection molding induced a high orientation. Dielectric constant (εr) of the composites ranged between 2.25 and 3.39. The estimation of εr based on the Bruggeman mixing model agreed well with the measured value. Low dielectric losses (tan δ) at microwave frequencies, on the order of 10−4, were obtained for all the compositions. Through-thickness thermal conductivity (k) of the hot-pressed samples showed a drastic increase with increasing the filler concentration, reaching up to 2.1 W/m K at 40 vol% of hBN. The filler concentration dependence of k was less significant for the injection molded composites. In-plane thermal expansion was almost independent on the filler orientation, while the coefficient of thermal expansion for the thickness direction of the hot-pressed sample was reduced to approximately half of the injection molded counterpart. These differences in thermal conductivity and thermal expansion are thought to arise from the difference in hBN filler orientation

  11. Dielectric and thermal properties of isotactic polypropylene/hexagonal boron nitride composites for high-frequency applications

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Susumu, E-mail: 143453501@ccalumni.meijo-u.ac.jp [Graduate School of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 4688502 (Japan); Imai, Yusuke [National Institute of Advanced Industrial Science and Technology (AIST), 2268-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560 (Japan); Kan, Akinori [Graduate School of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 4688502 (Japan); Hotta, Yuji [National Institute of Advanced Industrial Science and Technology (AIST), 2268-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560 (Japan); Ogawa, Hirotaka [Graduate School of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 4688502 (Japan)

    2014-12-05

    Highlights: • The degree of orientation of the hBN could be controlled by the fabrication process. • The dielectric constants of composites ranged between 2.25 and 3.39. • The dielectric loss of composites was on the order of 10{sup −4} for all compositions. • The thermal conductivity were improved by controlling orientation of hBN. - Abstract: Dielectric composites aimed for high frequency applications were prepared by using anisotropic hexagonal boron nitride (hBN) particles as a fillers and isotactic polypropylene (iPP) as polymer matrix. Dielectric and thermal properties of the composites were studied, focusing on the filler orientation in the plate-shape specimens and filler concentration up to 40 vol%. The degree of orientation of the filler was controlled by the composite fabrication process. Hot-pressing gave relatively random orientation of the filler in the matrix, while injection molding induced a high orientation. Dielectric constant (ε{sub r}) of the composites ranged between 2.25 and 3.39. The estimation of ε{sub r} based on the Bruggeman mixing model agreed well with the measured value. Low dielectric losses (tan δ) at microwave frequencies, on the order of 10{sup −4}, were obtained for all the compositions. Through-thickness thermal conductivity (k) of the hot-pressed samples showed a drastic increase with increasing the filler concentration, reaching up to 2.1 W/m K at 40 vol% of hBN. The filler concentration dependence of k was less significant for the injection molded composites. In-plane thermal expansion was almost independent on the filler orientation, while the coefficient of thermal expansion for the thickness direction of the hot-pressed sample was reduced to approximately half of the injection molded counterpart. These differences in thermal conductivity and thermal expansion are thought to arise from the difference in hBN filler orientation.

  12. The effect of twist angle on anisotropic mobility of {1 1 0} hexagonal dislocation networks in α-iron

    International Nuclear Information System (INIS)

    The anisotropic mobility of hexagonal dislocation networks (HDNs) in a series of (1 1¯ 0) twist boundaries under applied shear stress has been studied at the atomic scale in α-iron. A strong angular effect on the HDN mobility is found to be correlated with the dislocation core structure. The vector form of the Orowan equation and differential displacement maps of dislocation cores are used to account for the HDN behavior under loading.

  13. Phonon transport at the interfaces of vertically stacked graphene and hexagonal boron nitride heterostructures

    Science.gov (United States)

    Yan, Zhequan; Chen, Liang; Yoon, Mina; Kumar, Satish

    2016-02-01

    Hexagonal boron nitride (h-BN) is a promising substrate for graphene based nano-electronic devices. We investigate the ballistic phonon transport at the interface of vertically stacked graphene and h-BN heterostructures using first principles density functional theory and atomistic Green's function simulations considering the influence of lattice stacking. We compute the frequency and wave-vector dependent transmission function and observe distinct stacking-dependent phonon transmission features for the h-BN/graphene/h-BN sandwiched systems. We find that the in-plane acoustic modes have the dominant contributions to the phonon transmission and thermal boundary conductance (TBC) for the interfaces with the carbon atom located directly on top of the boron atom (C-B matched) because of low interfacial spacing. The low interfacial spacing is a consequence of the differences in the effective atomic volume of N and B and the difference in the local electron density around N and B. For the structures with the carbon atom directly on top of the nitrogen atom (C-N matched), the spatial distance increases and the contribution of in-plane modes to the TBC decreases leading to higher contributions by out-of-plane acoustic modes. We find that the C-B matched interfaces have stronger phonon-phonon coupling than the C-N matched interfaces, which results in significantly higher TBC (more than 50%) in the C-B matched interface. The findings in this study will provide insights to understand the mechanism of phonon transport at h-BN/graphene/h-BN interfaces, to better explain the experimental observations and to engineer these interfaces to enhance heat dissipation in graphene based electronic devices.

  14. Phonon transport at the interfaces of vertically stacked graphene and hexagonal boron nitride heterostructures.

    Science.gov (United States)

    Yan, Zhequan; Chen, Liang; Yoon, Mina; Kumar, Satish

    2016-02-21

    Hexagonal boron nitride (h-BN) is a promising substrate for graphene based nano-electronic devices. We investigate the ballistic phonon transport at the interface of vertically stacked graphene and h-BN heterostructures using first principles density functional theory and atomistic Green's function simulations considering the influence of lattice stacking. We compute the frequency and wave-vector dependent transmission function and observe distinct stacking-dependent phonon transmission features for the h-BN/graphene/h-BN sandwiched systems. We find that the in-plane acoustic modes have the dominant contributions to the phonon transmission and thermal boundary conductance (TBC) for the interfaces with the carbon atom located directly on top of the boron atom (C-B matched) because of low interfacial spacing. The low interfacial spacing is a consequence of the differences in the effective atomic volume of N and B and the difference in the local electron density around N and B. For the structures with the carbon atom directly on top of the nitrogen atom (C-N matched), the spatial distance increases and the contribution of in-plane modes to the TBC decreases leading to higher contributions by out-of-plane acoustic modes. We find that the C-B matched interfaces have stronger phonon-phonon coupling than the C-N matched interfaces, which results in significantly higher TBC (more than 50%) in the C-B matched interface. The findings in this study will provide insights to understand the mechanism of phonon transport at h-BN/graphene/h-BN interfaces, to better explain the experimental observations and to engineer these interfaces to enhance heat dissipation in graphene based electronic devices. PMID:26817419

  15. Controlling Electronic and Geometrical Structure of Honeycomb-Lattice Materials Supported on Metal Substrates : Graphene and Hexagonal Boron Nitride

    OpenAIRE

    Vinogradov, Nikolay

    2013-01-01

    The present thesis is focused on various methods of controlling electronic and geometrical structure of two-dimensional overlayers adsorbed on metal surfaces exemplified by graphene and hexagonal boron nitride (h-BN) grown on transition metal (TM) substrates. Combining synchrotron-radiation-based spectroscopic and various microscopic techniques with in situ sample preparation, we are able to trace the evolution of overlayer electronic and geometrical properties in overlayer/substrate systems,...

  16. Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

    OpenAIRE

    Song, Xiuju; Gao, Junfeng; Gao, Teng; Nie, Yufeng; Sun, Jingyu; Chen, Yubin; Jin, Chuanhong; Ding, Feng; Zhang, Yanfeng; Liu, Zhongfan

    2015-01-01

    Chemical vapor deposition synthesis of large domain hexagonal boron nitride (h-BN) with uniform thickness on Cu foils is of great challenge, originating from the extremely high nucleation densities and the reverse hydrogen etching competition reaction. We report herein the successful growth of wafer-scale high-quality h-BN monolayer film with the largest single crystalline domain sizes up to 72 micrometer in edge length using a folded Cu enclosure approach. The highly-confined growth space wi...

  17. Enhanced thermal conductivity and isotope effect in single-layer hexagonal boron nitride

    Science.gov (United States)

    Broido, David; Lindsay, Lucas

    2012-02-01

    We have calculated the lattice thermal conductivity, k, of both naturally occurring and isotopically enriched single layers of hexagonal boron nitride (h-BN) as well as bulk h-BN using an exact numerical solution of the Boltzmann transport equation for phonons [1]. Good agreement is obtained with measured bulk h-BN data [2], and the stronger phonon-phonon scattering identified in these systems explains why their k values are significantly lower than those in graphene and graphite. A reduction in such scattering in the single layer arising mainly from a symmetry-based selection rule leads to a substantial increase in k, with calculated room temperature values of more than 600 W/m-K. Additional enhancement is obtained from isotopic enrichment, which exhibits a strong peak as a function of temperature, with magnitude growing rapidly with crystallite size. [1] L. Lindsay and D. A. Broido, Phys. Rev. B 84, 155421 (2011). [2] E. K. Sichel, R. E. Miller, M. S. Abrahams, and C. J. Buiocchi, Phys. Rev. B 13, 4607 (1976).

  18. Local charge states in hexagonal boron nitride with Stone-Wales defects.

    Science.gov (United States)

    Wang, Rui; Yang, Jiali; Wu, Xiaozhi; Wang, Shaofeng

    2016-04-14

    A Stone-Wales (SW) defect is the simplest topological defect in graphene-like materials and can be potentially employed to design electronic devices . In this paper, we have systematically investigated the formation, structural, and electronic properties of the neutral and charged SW defects in hexagonal boron nitride (BN) using first-principles calculations. The transition states and energy barrier for the formation of SW defects demonstrate that the defected BN is stable. Our calculations show that there are two in-gap defect levels, which originate from the asymmetrical pentagon-heptagon pairs. The local defect configurations and electronic properties are sensitive to their charge states induced by the defect levels. The electronic band structures show that the negative and positive charged defects are mainly determined by shifting the conduction band minimum (CBM) and valence band maximum (VBM) respectively, and the SW-defected BN can realize -1 and +1 spin-polarized charge states. The effects of carbon (C) substitution on neutral and charged SW-defected BN have also been studied. Our results indicate that the C substitution of B in BN is in favour of the formation of SW defects. Structural and electronic calculations show rich charge-dependent properties of C substitutions in SW-defected BN, thus our theoretical study is important for various applications in the design of BN nanostructure-based devices. PMID:27030259

  19. MOCVD of hexagonal boron nitride thin films on Si(100) using new single source precursors

    CERN Document Server

    Boo, J H; Yu, K S; Kim, Y S; Kim, Y S; Park, J T

    1999-01-01

    We have been carried out the growth of hexagonal boron nitride (h-BN) thin films on Si(100) substrates by low pressure metal-organic chemical vapor deposition (LPMOCVD) method using triethylborane tert-butylamine complex (TEBTBA), Et sub 3 BNH sub 2 ( sup t Bu), and triethylborane isopropylamine complex (TEBIPA), Et sub 3 BNH sub 2 ( sup t Pr) as a new single molecular precursors in the temperature range of 850 approx 1000 .deg. C. polycrystalline, crack-free h-BN film was successfully grown on Si(100) substrate at 850 .deg. C using TEBTBA. This growth temperature is very lower than those in previous reports. Carbon-rich polycrystalline BN was also obtained at 900 .deg. C from TEBIPA. With increasing substrate temperature to 1000 .deg. C, however, BC sub 4 N-like species are strongly formed along with h-BN and the BN films obtained from both TEBTBA and TEBIPA but almost polycrystalline. To our best knowledge, this is the first report of the growth of h-BN films formed with the new single source precursors of ...

  20. Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates

    Science.gov (United States)

    Feigelson, Boris N.; Bermudez, Victor M.; Hite, Jennifer K.; Robinson, Zachary R.; Wheeler, Virginia D.; Sridhara, Karthik; Hernández, Sandra C.

    2015-02-01

    Atomically thin two dimensional hexagonal boron nitride (2D h-BN) is one of the key materials in the development of new van der Waals heterostructures due to its outstanding properties including an atomically smooth surface, high thermal conductivity, high mechanical strength, chemical inertness and high electrical resistance. The development of 2D h-BN growth is still in the early stages and largely depends on rapid and accurate characterization of the grown monolayer or few layers h-BN films. This paper demonstrates a new approach to characterizing monolayer h-BN films directly on metal substrates by grazing-incidence infrared reflection absorption spectroscopy (IRRAS). Using h-BN films grown by atmospheric-pressure chemical vapor deposition on Cu and Ni substrates, two new sub-bands are found for the A2u out-of-plane stretching mode. It is shown, using both experimental and computational methods, that the lower-energy sub-band is related to 2D h-BN coupled with substrate, while the higher energy sub-band is related to decoupled (or free-standing) 2D h-BN. It is further shown that this newly-observed fine structure in the A2u mode can be used to assess, quickly and easily, the homogeneity of the h-BN-metal interface and the effects of metal surface contamination on adhesion of the layer.

  1. Thermal diffusivity of hexagonal boron nitride composites based on cross-linked liquid crystalline polyimides.

    Science.gov (United States)

    Shoji, Yu; Higashihara, Tomoya; Tokita, Masatoshi; Morikawa, Junko; Watanabe, Junji; Ueda, Mitsuru

    2013-04-24

    Hexagonal boron nitride (h-BN) composites with the oriented cross-linked liquid crystalline (LC) polyimide have been developed as high thermally conductive materials. Well-dispersed h-BN composite films were obtained, as observed by scanning electron microscopy. The morphology of the composite films was further investigated in detail by the wide-angle X-ray diffraction. The obtained composite films based on the cross-linked LC polyimide showed that the polymer chains vertically aligned in the direction parallel to the films, while those based on the amorphous polyimide showed an isotropic nature. Moreover, the alignment of the cross-linked LC polyimides was maintained, even after increasing the volume fraction of h-BN. This alignment plays an important role in the effective phonon conduction between h-BN and the matrices. Indeed, the thermal diffusivity in the thickness direction of the composite films based on the LC polyimide measured by a temperature wave analysis method was increased to 0.679 mm(2) s(-1) at a 30 vol % h-BN loading, which was higher than that based on the amorphous polyimide. PMID:23506319

  2. Synthesis and applications of two-dimensional hexagonal boron nitride in electronics manufacturing

    Science.gov (United States)

    Bao, Jie; Jeppson, Kjell; Edwards, Michael; Fu, Yifeng; Ye, Lilei; Lu, Xiuzhen; Liu, Johan

    2016-01-01

    In similarity to graphene, two-dimensional (2D) hexagonal boron nitride (hBN) has some remarkable properties, such as mechanical robustness and high thermal conductivity. In addition, hBN has superb chemical stability and it is electrically insulating. 2D hBN has been considered a promising material for many applications in electronics, including 2D hBN based substrates, gate dielectrics for graphene transistors and interconnects, and electronic packaging insulators. This paper reviews the synthesis, transfer and fabrication of 2D hBN films, hBN based composites and hBN-based van der Waals heterostructures. In particular, this review focuses on applications in manufacturing electronic devices where the insulating and thermal properties of hBN can potentially be exploited. 2D hBN and related composite systems are emerging as new and industrially important materials, which could address many challenges in future complex electronics devices and systems. [Figure not available: see fulltext.

  3. Effects of hexagonal boron nitride on dry compression mixture of Avicel DG and Starch 1500.

    Science.gov (United States)

    Uğurlu, Timuçin; Halaçoğlu, Mekin Doğa

    2016-06-01

    The objective of this study was to investigate the lubrication properties of hexagonal boron nitride (HBN) on a (1:1) binary mixture of Avicel DG and Starch 1500 after using the dry granulation-slugging method and compare it with conventional lubricants, such as magnesium stearate (MGST), glyceryl behenate (COMP) and stearic acid (STAC). MGST is one of the most commonly used lubricants in the pharmaceutical industry. However, it has several adverse effects on tablet properties. In our current study, we employed various methods to eradicate the work hardening phenomenon in dry granulation, and used HBN as a new lubricant to overcome the adverse effects of other lubricants on tablet properties. HBN was found to be as effective as MGST and did not show any significant adverse effects on the crushing strength or work hardening. From the scanning electron microscope (SEM) images, it was concluded that HBN distributed better than MGST. As well as showing better distribution, HBN's effect on disintegration was the least pronounced. Semi-quantitative weight percent distribution of B and N elements in the tablets was obtained using EDS (energy dispersive spectroscopy). Based on atomic force microscope (AFM) surface roughness images, formulations prepared with 1% HBN showed better plastic character than those prepared with MGST. PMID:25716058

  4. Fabrication and characterization of hexagonal boron nitride powder by spray drying and calcining-nitriding technology

    International Nuclear Information System (INIS)

    Hexagonal boron nitride (hBN) powder was fabricated prepared by the spray drying and calcining-nitriding technology. The effects of nitrided temperature on the phases, morphology and particle size distribution of hBN powder, were investigated. The synthesized powders were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), Fourier transformed infrared spectrum, ultraviolet-visible (UV-vis) spectrum and photoluminescence (PL) spectrum. UV-vis spectrum revealed that the product had one obvious band gap (4.7 eV) and PL spectrum showed that it had a visible emission at 457 nm (λex=230 nm). FESEM image indicated that the particle size of the synthesized hBN was mainly in the range of 0.5-1.5 μm in diameter, and 50-150 nm in thickness. The high-energy ball-milling process following 900 deg. C calcining process was very helpful to obtain fully crystallized hBN at lower temperature. - Graphical abstract: hBN powder was fabricated prepared by spray drying and calcining-nitriding technology. The results indicated that spray drying and calcining-nitriding technology assisted with high-energy ball-milling process following calcined process was a hopeful way to manufacture hBN powder with high crystallinity in industrial scale

  5. Hexagonal boron nitride nanoparticles decorated halloysite clay nanotubes as a potential hydrogen storage medium

    Science.gov (United States)

    Muthu, R. Naresh; Rajashabala, S.; Kannan, R.

    2016-05-01

    The light weight and compact hydrogen storage materials is still prerequisite for the carbon free hydrogen fuel cell technology. In this work, the hydrogen storage performance of acid treated halloysite clay nanotubes (A-HNTs) and hexagonal boron nitride (h-BN) nanoparticles decorated acid treated halloysite nanoclay composite (A-HNT-h-BN) are demonstrated, where facile ultrasonic technique is adopted for the synthesis of A-HNT-h-BN nanoclay composite. Hydrogen storage studies were carried out using Sieverts-like hydrogenation setup. The A-HNTs and A-HNT-h-BN nanoclay composite were analyzed by XRD, FTIR, HRTEM, EDX, CHNS-elemental analysis and TGA. The A-HNT-h-BN nanoclay composite shows superior storage capacity of 2.19 wt% at 50 °C compared to the A-HNTs (0.58 wt%). A 100% desorption of stored hydrogen is noted in the temperature range of 138-175 °C. The average binding energy of hydrogen was found to be 0.34 eV for the prepared A-HNT-h-BN nanoclay composite. The excellent storage capability of A-HNT-h-BN nanoclay composite towards hydrogen at ambient temperature may find bright perspective in hydrogen fuel cell technology in near future.

  6. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FETs

    Science.gov (United States)

    Kang, Sangwoo; Fallahazad, Babak; Lee, Kayoung; Movva, Hema; Kim, Kyounghwan; Corbet, Chris; Taniguchi, Takashi; Watanabe, Kenji; Colombo, Luigi; Register, Leonard; Tutuc, Emanuel; Banerjee, Sanjay

    2015-03-01

    We present the operation of a vertical tunneling field effect transistor using a stacked double bilayer graphene (BLG) and hexagonal boron nitride (hBN) heterostructure. The device is fabricated with the so-called Van der Waals transfer method with the edges of the top and bottom BLG flakes being rotationally aligned to roughly 60°. The device shows multiple negative differential resistance (NDR) peaks which can be adjusted through the gate bias. Temperature dependent measurements show that the peak width of the differential conductance broadens and the height lowered when the temperature is increased, which is indicative of resonant tunneling. Through electrostatic calculations, it is shown that the multiple peaks occur when the two conduction bands at the K-point of the top and bottom bilayer graphene become aligned at certain bias conditions. It is also shown that by adjusting the rotational alignment of the bands of the top and bottom BLG through an in-plane magnetic field, the conductance peaks can be broadened. In addition, utilizing the NDR characteristic of the device, one-transistor latch or SRAM operation is demonstrated.

  7. The defect-induced fracture behaviors of hexagonal boron-nitride monolayer nanosheets under uniaxial tension

    International Nuclear Information System (INIS)

    Due to its excellent mechanical and electrical insulating properties, the hexagonal boron-nitride (h-BN) monolayer nanosheet is regarded as a complementary addition to graphene. However, its mechanical strength can be significantly affected by various defects pre-existing in it, such as a Stone–Wales defect, a vacancy defect, an atomic anti-site defect, etc. In this work, the influences of various pre-existing defects on the fracture behaviors of an h-BN monolayer nanosheet are investigated carefully using molecular dynamics simulation. The results show that the nucleation and evolution of a fracture induced by defects in the h-BN monolayer nanosheet are directional, and that the crack always starts from the location which has a weak bond energy. An unexpected observation is that the defect propagates mostly in the zigzag direction but occasionally in the armchair direction. The fracture strength and the fracture strain of the h-BN monolayer nanosheet are reduced at different extents due to the various pre-existing defects. Additionally, for the defective h-BN monolayer nanosheets, the fracture strength and strain measured in the armchair direction is much higher than the strength found in the zigzag direction. However, the strengths measured in the armchair and zigzag directions for the defect-free h-BN monolayer nanosheets almost are identical which implies that the armchair direction has a stronger ability to resist various defects compared to the zigzag direction. (paper)

  8. Surface adhesion between hexagonal boron nitride nanotubes and silicon based on lateral force microscopy

    International Nuclear Information System (INIS)

    This study presents the surface adhesion between hexagonal boron nitride nanotube (BNNT) and silicon based on lateral manipulation in an atomic force microscope (AFM). The BNNT was mechanically manipulated by the lateral force of an AFM pyramidal silicon probe using the scan mechanism in the imaging mode. With a controlled normal force of the AFM probe and the lateral motion, the lateral force applied to the BNNT could overcome the surface adhesion between BNNT and silicon surface. The individual BNNT is forced to slide and rotate on the silicon surface. Based on the recorded force curve, the calculated shear stress due to surface adhesion is 0.5 GPa. And the specific sliding energy loss is 0.2 J/m2. Comparing BNNTs and carbon nanotube (CNT), the shear stress and specific sliding energy loss of BNNT are an order of magnitude larger than that of CNT. Therefore, the results show that the surface adhesion between BNNT and silicon surface is higher than that of CNT.

  9. Magnetism and transport properties of zigzag graphene nanoribbons/hexagonal boron nitride heterostructures

    International Nuclear Information System (INIS)

    Results of ab initio study of magnetism and transport properties of charge carriers in zigzag graphene nanoribbons (ZGNR) on hexagonal boron nitride (h-BN(0001)) substrate are presented within the density functional theory framework. Peculiarities of the interface band structure and its role in the formation of magnetism and transport properties of the ZGNR/h-BN(0001) heterostructure have been studied using two different density functional approximations. The effect of the substrate and graphene nanoribbons width on the low-energy spectrum of π-electrons, local magnetic moments on atoms of interface, and charge carriers mobility in the ZGNR/h-BN(0001) heterostructures have been established for the first time. The regularity consisting in the charge carrier mobility growth with decrease of dimers number in nanoribbon was also established. It is found that the charge carriers mobility in the N-ZGNR/h-BN(0001) (N—number of carbon (C) dimers) heterostructures is 5% higher than in freestanding ZGNR

  10. Magnetism and transport properties of zigzag graphene nanoribbons/hexagonal boron nitride heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ilyasov, V. V., E-mail: viily@mail.ru, E-mail: chuongnguyen11@gmail.com; Meshi, B. C.; Nguyen, V. C., E-mail: viily@mail.ru, E-mail: chuongnguyen11@gmail.com; Ershov, I. V. [Don State Technical University, 1 Gagarin Sq, 344000 Rostov on Don (Russian Federation); Nguyen, D. C. [Department of Electronic Materials, School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Rd, 10000 Hanoi (Viet Nam)

    2014-02-07

    Results of ab initio study of magnetism and transport properties of charge carriers in zigzag graphene nanoribbons (ZGNR) on hexagonal boron nitride (h-BN(0001)) substrate are presented within the density functional theory framework. Peculiarities of the interface band structure and its role in the formation of magnetism and transport properties of the ZGNR/h-BN(0001) heterostructure have been studied using two different density functional approximations. The effect of the substrate and graphene nanoribbons width on the low-energy spectrum of π-electrons, local magnetic moments on atoms of interface, and charge carriers mobility in the ZGNR/h-BN(0001) heterostructures have been established for the first time. The regularity consisting in the charge carrier mobility growth with decrease of dimers number in nanoribbon was also established. It is found that the charge carriers mobility in the N-ZGNR/h-BN(0001) (N—number of carbon (C) dimers) heterostructures is 5% higher than in freestanding ZGNR.

  11. Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy

    Science.gov (United States)

    Lu, Guangyuan; Wu, Tianru; Yuan, Qinghong; Wang, Huishan; Wang, Haomin; Ding, Feng; Xie, Xiaoming; Jiang, Mianheng

    2015-01-01

    Hexagonal boron nitride (h-BN) has attracted significant attention because of its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapour deposition in earlier reports are always polycrystalline with small grains because of high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm2 by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500 μm2, approximately two orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nanoelectronic applications.

  12. Growth and Contrast of Hexagonal Boron Nitride: From Submonolayer Islands to Multilayer Films

    Science.gov (United States)

    Koepke, Justin; Wood, Joshua; Pop, Eric; Lyding, Joseph

    2013-03-01

    Strong interest in hexagon boron nitride (h-BN) as a substrate for graphene devices or as a template for growth of other layered compounds has motivated recent attempts to synthesize large scale h-BN by chemical vapor deposition (CVD). We synthesize h-BN by low pressure CVD on polycrystalline Cu foil in a hot wall tube furnace with a heated ammonia borane precursor carried downstream by Ar and H2 gas. Transmission electron microscopy (TEM) diffraction patterns show that the resulting growths are highly crystalline, with several layers obtained for longer growth times. Short growth times show that the h-BN nucleates in triangular islands at a higher precursor temperature than previously reported in and a lower temperature than reported in. In-air calcination of the Cu foils after partial h-BN growth allows optical contrast of the previously transparent h-BN islands on the Cu foil. This observed resistance to oxidation suggests that grown h-BN films can serve as an insulating anti-corrosion layer.

  13. Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

    International Nuclear Information System (INIS)

    Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO2/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications

  14. Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tay, Roland Yingjie [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Tsang, Siu Hon [Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Loeblein, Manuela; Chow, Wai Leong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); CNRS-International NTU Thales Research Alliance CINTRA UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore, Singapore 637553 (Singapore); Loh, Guan Chee [Institue of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Toh, Joo Wah; Ang, Soon Loong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Teo, Edwin Hang Tong, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore)

    2015-03-09

    Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

  15. Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

    International Nuclear Information System (INIS)

    Hexagonal boron nitride (h-BN) is highly promising for solid-state thermal neutron detector applications due to its many outstanding physical properties, especially its very large thermal neutron capture cross-section (~3840 barns for 10B), which is several orders of magnitude larger than those of most other isotopes. The focus of the present work is to carry out studies on h-BN thin film and detector properties to lay the foundation for the development of a direct-conversion solid-state thermal neutron detector with high sensitivity. The measured carrier mobility-lifetime (μτ) product of h-BN thin films grown on sapphire substrates is 2.83×10−7 cm2/V for electrons and holes, which is comparable to the value of about 10−7 cm2/V for GaN thin films grown on sapphire. Detectors based on h-BN thin films were fabricated and the nuclear reaction product pulse height spectra were measured. Under a bias of 20 V, very narrow individual peaks corresponding to the reaction product energies of α and Li particles as well as the sum peaks have been clearly resolved in the pulse height spectrum for the first time by a B-based direct-conversion semiconductor neutron detector. Our results indicate that h-BN thin film detectors possess unique advantages including small size, low weight, portability, low voltage operation and high energy resolution of specific reaction products

  16. Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

    Science.gov (United States)

    Doan, T. C.; Majety, S.; Grenadier, S.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2015-05-01

    Hexagonal boron nitride (h-BN) is highly promising for solid-state thermal neutron detector applications due to its many outstanding physical properties, especially its very large thermal neutron capture cross-section (~3840 barns for 10B), which is several orders of magnitude larger than those of most other isotopes. The focus of the present work is to carry out studies on h-BN thin film and detector properties to lay the foundation for the development of a direct-conversion solid-state thermal neutron detector with high sensitivity. The measured carrier mobility-lifetime (μτ) product of h-BN thin films grown on sapphire substrates is 2.83×10-7 cm2/V for electrons and holes, which is comparable to the value of about 10-7 cm2/V for GaN thin films grown on sapphire. Detectors based on h-BN thin films were fabricated and the nuclear reaction product pulse height spectra were measured. Under a bias of 20 V, very narrow individual peaks corresponding to the reaction product energies of α and Li particles as well as the sum peaks have been clearly resolved in the pulse height spectrum for the first time by a B-based direct-conversion semiconductor neutron detector. Our results indicate that h-BN thin film detectors possess unique advantages including small size, low weight, portability, low voltage operation and high energy resolution of specific reaction products.

  17. Dry etching techniques for active devices based on hexagonal boron nitride epilayers

    International Nuclear Information System (INIS)

    Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth and angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ∼1.25 μm/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF6 is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing

  18. Dry etching techniques for active devices based on hexagonal boron nitride epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Grenadier, Samuel; Li, Jing; Lin, Jingyu; Jiang, Hongxing [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2013-11-15

    Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth and angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ∼1.25 μm/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF{sub 6} is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing.

  19. Subangstrom Edge Relaxations Probed by Electron Microscopy in Hexagonal Boron Nitride

    Science.gov (United States)

    Alem, Nasim; Ramasse, Quentin M.; Seabourne, Che R.; Yazyev, Oleg V.; Erickson, Kris; Sarahan, Michael C.; Kisielowski, Christian; Scott, Andrew J.; Louie, Steven G.; Zettl, A.

    2012-11-01

    Theoretical research on the two-dimensional crystal structure of hexagonal boron nitride (h-BN) has suggested that the physical properties of h-BN can be tailored for a wealth of applications by controlling the atomic structure of the membrane edges. Unexplored for h-BN, however, is the possibility that small additional edge-atom distortions could have electronic structure implications critically important to nanoengineering efforts. Here we demonstrate, using a combination of analytical scanning transmission electron microscopy and density functional theory, that covalent interlayer bonds form spontaneously at the edges of a h-BN bilayer, resulting in subangstrom distortions of the edge atomic structure. Orbital maps calculated in 3D around the closed edge reveal that the out-of-plane bonds retain a strong π* character. We show that this closed edge reconstruction, strikingly different from the equivalent case for graphene, helps the material recover its bulklike insulating behavior and thus largely negates the predicted metallic character of open edges.

  20. Synthesis of Large and Few Atomic Layers of Hexagonal Boron Nitride on Melted Copper

    Science.gov (United States)

    Khan, Majharul Haque; Huang, Zhenguo; Xiao, Feng; Casillas, Gilberto; Chen, Zhixin; Molino, Paul J.; Liu, Hua Kun

    2015-01-01

    Hexagonal boron nitride nanosheets (h-BNNS) have been proposed as an ideal substrate for graphene-based electronic devices, but the synthesis of large and homogeneous h-BNNS is still challenging. In this contribution, we report a facile synthesis of few-layer h-BNNS on melted copper via an atmospheric pressure chemical vapor deposition process. Comparative studies confirm the advantage of using melted copper over solid copper as a catalyst substrate. The former leads to the formation of single crystalline h-BNNS that is several microns in size and mostly in mono- and bi-layer forms, in contrast to the polycrystalline and mixed multiple layers (1-10) yielded by the latter. This difference is likely to be due to the significantly reduced and uniformly distributed nucleation sites on the smooth melted surface, in contrast to the large amounts of unevenly distributed nucleation sites that are associated with grain boundaries and other defects on the solid surface. This synthesis is expected to contribute to the development of large-scale manufacturing of h-BNNS/graphene-based electronics.

  1. Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene.

    Science.gov (United States)

    Shautsova, Viktoryia; Gilbertson, Adam M; Black, Nicola C G; Maier, Stefan A; Cohen, Lesley F

    2016-01-01

    We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enables a polymer-impurity free transfer process and subsequent top encapsulation of large-area CVD-grown graphene. We demonstrate that the CVD hBN layer that is utilized in this transfer technique acts as a buffer layer between the graphene film and supporting polymer layer. We show that the resulting graphene layers possess lower doping concentration, and improved carrier mobilities compared to graphene films produced by conventional transfer methods onto untreated SiO2/Si, SAM-modified and hBN covered SiO2/Si substrates. Moreover, we show that the top hBN layer used in the transfer process acts as an effective top encapsulation resulting in improved stability to ambient exposure. The transfer method is applicable to other CVD-grown 2D materials on copper foils, thereby facilitating the preparation of van der Waals heterostructures with controlled doping. PMID:27443219

  2. Quasiparticle Band Gaps of Graphene and Graphone on Hexagonal Boron Nitride Substrate

    Science.gov (United States)

    Kharche, Neerav; Nayak, Saroj

    2012-02-01

    Graphene holds great promise for post-silicon electronics; however, it faces two main challenges: opening up a band gap and finding a suitable substrate material. Graphene on hexagonal boron nitride (hBN) substrate provides a potential system to overcome these challenges. While theoretical studies suggested a possibility of a finite band gap of graphene on hBN, recent experimental studies find no band gap. We have studied graphene-hBN system using the first-principles density functional method and the many-body perturbation theory within GW approximation [1]. A Bernal stacked graphene on hBN has a band gap on the order of 0.1 eV, which disappears when graphene is misaligned with respect to hBN. The latter is the likely scenario in realistic devices. In contrast, if graphene supported on hBN is hydrogenated, the resulting system (graphone) exhibits band gaps larger than 2.5 eV. The graphone band gap is due to chemical functionalization and is robust in the presence of misalignment, however, it reduces by about 1 eV due to the polarization effects at the graphone/hBN interface.[4pt] [1] N. Kharche and S. K. Nayak, Nano Lett., DOI: 10.1021/nl202725w, (2011).

  3. Antenna-coupled photon emission from hexagonal boron nitride tunnel junctions

    Science.gov (United States)

    Parzefall, M.; Bharadwaj, P.; Jain, A.; Taniguchi, T.; Watanabe, K.; Novotny, L.

    2015-12-01

    The ultrafast conversion of electrical signals to optical signals at the nanoscale is of fundamental interest for data processing, telecommunication and optical interconnects. However, the modulation bandwidths of semiconductor light-emitting diodes are limited by the spontaneous recombination rate of electron-hole pairs, and the footprint of electrically driven ultrafast lasers is too large for practical on-chip integration. A metal-insulator-metal tunnel junction approaches the ultimate size limit of electronic devices and its operating speed is fundamentally limited only by the tunnelling time. Here, we study the conversion of electrons (localized in vertical gold-hexagonal boron nitride-gold tunnel junctions) to free-space photons, mediated by resonant slot antennas. Optical antennas efficiently bridge the size mismatch between nanoscale volumes and far-field radiation and strongly enhance the electron-photon conversion efficiency. We achieve polarized, directional and resonantly enhanced light emission from inelastic electron tunnelling and establish a novel platform for studying the interaction of electrons with strongly localized electromagnetic fields.

  4. Tuning dissociation using isoelectronically doped graphene and hexagonal boron nitride: Water and other small molecules

    Science.gov (United States)

    Al-Hamdani, Yasmine S.; Alfè, Dario; von Lilienfeld, O. Anatole; Michaelides, Angelos

    2016-04-01

    Novel uses for 2-dimensional materials like graphene and hexagonal boron nitride (h-BN) are being frequently discovered especially for membrane and catalysis applications. Still however, a great deal remains to be understood about the interaction of environmentally and industrially relevant molecules such as water with these materials. Taking inspiration from advances in hybridising graphene and h-BN, we explore using density functional theory, the dissociation of water, hydrogen, methane, and methanol on graphene, h-BN, and their isoelectronic doped counterparts: BN doped graphene and C doped h-BN. We find that doped surfaces are considerably more reactive than their pristine counterparts and by comparing the reactivity of several small molecules, we develop a general framework for dissociative adsorption. From this a particularly attractive consequence of isoelectronic doping emerges: substrates can be doped to enhance their reactivity specifically towards either polar or non-polar adsorbates. As such, these substrates are potentially viable candidates for selective catalysts and membranes, with the implication that a range of tuneable materials can be designed.

  5. Ultra-thin epitaxial films of graphite and hexagonal boron nitride on solid surfaces

    CERN Document Server

    Oshima, C

    1997-01-01

    In this article, we have reviewed the recent progress of the experimental studies on ultra-thin films of graphite and hexagonal boron nitride (h-BN) by using angle-resolved electron spectroscopy together with other techniques. The fundamental properties of these high-quality films are discussed on the basis of the data on dispersion relations of valence electrons, phonon dispersion etc. The interfacial orbital mixing of the pi-state of the monolayer graphite (MG) with the d states of the reactive substrates is the origin for the phonon softening, expansion of the nearest-neighbour C-C distance, modification of the pi-band, low work function, and two-dimensional plasmons with high electron density, etc. In the cases of weak mixing at the interface between the MG and relatively inert substrates, the observed properties of the MG are very close to the bulk ones. In contrast to the case for MG, the interfacial interaction between the h-BN monolayer and the substrate is weak. (author)

  6. Ion beam modification of the structure and properties of hexagonal boron nitride: An infrared and X-ray diffraction study

    Science.gov (United States)

    Aradi, E.; Naidoo, S. R.; Billing, D. G.; Wamwangi, D.; Motochi, I.; Derry, T. E.

    2014-07-01

    The vibrational mode for the cubic symmetry of boron nitride (BN) has been produced by boron ion implantation of hexagonal boron nitride (h-BN). The optimum fluence at 150 keV was found to be 5 × 1014 ions/cm2. The presence of the c-BN phase was inferred using glancing incidence XRD (GIXRD) and Fourier Transform Infrared Spectroscopy (FTIR). After implantation, Fourier Transform Infrared Spectroscopy indicated a peak at 1092 cm-1 which corresponds to the vibrational mode for nanocrystalline BN (nc-BN). The glancing angle XRD pattern after implantation exhibited c-BN diffraction peaks relative to the implantation depth of 0.4 μm.

  7. Ion beam modification of the structure and properties of hexagonal boron nitride: An infrared and X-ray diffraction study

    International Nuclear Information System (INIS)

    The vibrational mode for the cubic symmetry of boron nitride (BN) has been produced by boron ion implantation of hexagonal boron nitride (h-BN). The optimum fluence at 150 keV was found to be 5 × 1014 ions/cm2. The presence of the c-BN phase was inferred using glancing incidence XRD (GIXRD) and Fourier Transform Infrared Spectroscopy (FTIR). After implantation, Fourier Transform Infrared Spectroscopy indicated a peak at 1092 cm−1 which corresponds to the vibrational mode for nanocrystalline BN (nc-BN). The glancing angle XRD pattern after implantation exhibited c-BN diffraction peaks relative to the implantation depth of 0.4 μm

  8. Valence and conduction band offsets at amorphous hexagonal boron nitride interfaces with silicon network dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    King, Sean W., E-mail: sean.king@intel.com; Brockman, Justin; Bielefeld, Jeff; French, Marc; Kuhn, Markus [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); Paquette, Michelle M.; Otto, Joseph W.; Caruso, A. N. [Department of Physics and Astronomy, University of Missouri-Kansas City, Kansas City, Missouri 64110 (United States); French, Benjamin [Ocotillo Materials Laboratory, Intel Corporation, Chandler, Arizona 85248 (United States)

    2014-03-10

    To facilitate the design of heterostructure devices employing hexagonal/sp{sup 2} boron nitride, x-ray photoelectron spectroscopy has been utilized in conjunction with prior reflection electron energy loss spectroscopy measurements to determine the valence and conduction band offsets (VBOs and CBOs) present at interfaces formed between amorphous hydrogenated sp{sup 2} boron nitride (a-BN:H) and various low- and high-dielectric-constant (k) amorphous hydrogenated silicon network dielectric materials (a-SiX:H, X = O, N, C). For a-BN:H interfaces formed with wide-band-gap a-SiO{sub 2} and low-k a-SiOC:H materials (E{sub g} ≅ 8.2−8.8 eV), a type I band alignment was observed where the a-BN:H band gap (E{sub g} = 5.5 ± 0.2 eV) was bracketed by a relatively large VBO and CBO of ∼1.9 and 1.2 eV, respectively. Similarly, a type I alignment was observed between a-BN:H and high-k a-SiC:H where the a-SiC:H band gap (E{sub g} = 2.6 ± 0.2 eV) was bracketed by a-BN:H with VBO and CBO of 1.0 ± 0.1 and 1.9 ± 0.2 eV, respectively. The addition of O or N to a-SiC:H was observed to decrease the VBO and increase the CBO with a-BN:H. For high-k a-SiN:H (E{sub g} = 3.3 ± 0.2 eV) interfaces with a-BN:H, a slightly staggered type II band alignment was observed with VBO and CBO of 0.1 ± 0.1 and −2.3 ± 0.2 eV, respectively. The measured a-BN:H VBOs were found to be consistent with those deduced via application of the commutative and transitive rules to VBOs reported for a-BN:H, a-SiC:H, a-SiN:H, and a-SiO{sub 2} interfaces with Si (100)

  9. Thermal Conductance at the 2D MoS2-hexagonal Boron Nitride Interface

    Science.gov (United States)

    Liu, Yi; Hippalgaonkar, Kedar; Ong, Zhun Yong; Thong, John Tl; Qiu, Chengwei

    In recent years, a number of 2D heterostructure devices have emerged, including graphene/hexagonal boron nitride (h-BN), graphene/MoS2 and MoS2/ h-BN. Among them, MoS2/ h-BN field-effect transistors with MoS2 channels and h-BN dielectric have been reported to have higher carrier mobility and reduced hysteresis compared to MoS2 on SiO2. Despite relatively high in-plane thermal conductivity of MoS2 and h-BN, heat dissipation from these 2D devices is mainly limited by heat transfer in the vertical direction. Consequently, their operating temperatures are strongly influenced by the interface thermal conductance. In this work, we demonstrate the measurement of interface thermal conductance between MoS2 and h-BN. This is realized by electrically heating MoS2 and monitoring their temperatures through Raman spectroscopy. The obtained interface thermal conductance between MoS2 and h-BN is 1.77 MW/m2K, smaller than the reported value for the graphene/ h-BN interface, due to the weak coupling of phonon modes between MoS2 and h-BN based on our NEGF calculation. The low interface thermal conductance value suggests this interface is not favorable for heat dissipation, and should be considered carefully for the design of electronic and optoelectronic devices based on MoS2/ h-BN heterostructures.

  10. Hexagonal boron nitride: Ubiquitous layered dielectric for two-dimensional electronics

    Science.gov (United States)

    Jain, Nikhil

    Hexagonal boron nitride (h-BN), a layer-structured dielectric with very similar crystalline lattice to that of graphene, has been studied as a ubiquitous dielectric for two-dimensional electronics. While 2D materials may lead to future platform for electronics, traditional thin-film dielectrics (e.g., various oxides) make highly invasive interface with graphene. Multiple key roles of h-BN in graphene electronics are explored in this thesis. 2D graphene/h-BN heterostructures are designed and implemented in diverse configurations in which h-BN is evaluated as a supporting substrate, a gate dielectric, a passivation layer, or an interposing barrier in "3D graphene" superlattice. First, CVD-grown graphene on h-BN substrate shows improved conductivity and resilience to thermally induced breakdown, as compared with graphene on SiO2, potentially useful for high-speed graphene devices and on-chip interconnects. h-BN is also explored as a gate dielectric for graphene field-effect transistor with 2D heterostructure design. The dielectric strength and tunneling behavior of h-BN are investigated, confirming its robust nature. Next, h-BN is studied as a passivation layer for graphene electronics. In addition to significant improvement in current density and breakdown threshold, fully encapsulated graphene exhibits minimal environmental sensitivity, a key benefit to 2D materials which have only surfaces. Lastly, reduction in interlayer carrier scattering is observed in a double-layered graphene setup with ultrathin h-BN multilayer as an interposing layer. The DFT simulation and Raman spectral analysis indicate reduction in interlayer scattering. The decoupling of the two graphene monolayers is further confirmed by electrical characterization, as compared with other referencing mono- and multilayer configurations. The heterostructure serves as the building element in "3D graphene", a versatile platform for future electronics.

  11. Large scale graphene/hexagonal boron nitride heterostructure for tunable plasmonics

    KAUST Repository

    Zhang, Kai

    2013-09-01

    Vertical integration of hexagonal boron nitride (h-BN) and graphene for the fabrication of vertical field-effect transistors or tunneling diodes has stimulated intense interest recently due to the enhanced performance offered by combining an ultrathin dielectric with a semi-metallic system. Wafer scale fabrication and processing of these heterostructures is needed to make large scale integrated circuitry. In this work, by using remote discharged, radio-frequency plasma chemical vapor deposition, wafer scale, high quality few layer h-BN films are successfully grown. By using few layer h-BN films as top gate dielectric material, the plasmon energy of graphene can be tuned by electrostatic doping. An array of graphene/h-BN vertically stacked micrometer-sized disks is fabricated by lithography and transfer techniques, and infrared spectroscopy is used to observe the modes of tunable graphene plasmonic absorption as a function of the repeating (G/h-BN)n units in the vertical stack. Interestingly, the plasmonic resonances can be tuned to higher frequencies with increasing layer thickness of the disks, showing that such vertical stacking provides a viable strategy to provide wide window tuning of the plasmons beyond the limitation of the monolayer. An array of graphene/h-BN vertically stacked micrometer-sized disks is fabricated by lithography and transfer techniques, and infrared spectroscopy is used to observe the modes of tunable graphene plasmonic absorption as a function of the repeating (G/h-BN)n units in the vertical stack. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Raman studies on the effect of multiple-energy ion implantation on single-crystal hexagonal boron nitride

    Science.gov (United States)

    Aradi, E.; Naidoo, S. R.; Erasmus, R. M.; Julies, B.; Derry, T. E.

    2015-03-01

    Single energy ion implantation of hexagonal boron nitride (h-BN) at various fluences and keV energies has shown that there is a change in the local symmetry of the crystal from hexagonal to the cubic (c-BN) symmetry. These conclusions have been primarily based on Raman scattering (RS) and Fourier transform infrared spectroscopy. Transmission electron microscopy (TEM) analyses have been a challenge because the sample preparation for cross-sectional study of both the polycrystalline substrates and single-crystal material used in the study presented problems that were difficult to circumvent. A multiple-energy implant with different fluence fractions has been used to create a uniform implanted layer in the material from the surface to the end of range of the implant in this study. We report on the initial RS studies on these samples.

  13. Deposition of hexagonal boron nitride thin films on silver nanoparticle substrates and surface enhanced infrared absorption

    International Nuclear Information System (INIS)

    Silver nanoparticle thin films with different average particle diameters are grown on silicon substrates. Boron nitride thin films are then deposited on the silver nanoparticle interlayers by radio frequency (RF) magnetron sputtering. The boron nitride thin films are characterized by Fourier transform infrared spectra. The average particle diameters of silver nanoparticle thin films are 126.6, 78.4, and 178.8 nm. The results show that the sizes of the silver nanoparticles have effects on the intensities of infrared spectra of boron nitride thin films. An enhanced infrared absorption is detected for boron nitride thin film grown on silver nanoparticle thin film. This result is helpful to study the growth mechanism of boron nitride thin film. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. The Influence of Surface-Active Agent on the Micro-Morphology and Crystallinity of Spherical Hexagonal Boron Nitride.

    Science.gov (United States)

    Zhang, Ning; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

    2015-08-01

    This search used the low-cost boric acid and borax as a source of boron, urea as a nitrogen source, surface-active agent Dodecyl benzenesulfonic acid (SDBS) as a dispersant, and thus prepared different micro-morphology and crystallinity hexagonal boron nitride powders under a flowing ammonia atmosphere at a nitriding temperature of 900 °C. The effect of the surface-active agent (SDBS) content on the crystallinity and micro-morphology of hexagonal boron nitride powders was studied, and the corresponding relationship between micro-morphology and crystallinity was explored. The results showed that under a certain synthetic process (900 °C for 3 h), the surfactant content had affected the crystallinity and micro-morphology of h-BN powders. Without the added surfactant, the graphitization index (GI) was 3.61, and micro-morphology of h-BN powders. was spherical, the distribution of ball diameters was uneven, and there was also significant particle agglomeration, with some particles even exhibiting adhesion, sintering necks, and high sphericity and diameter. When the added SDBS percentages were 2%, 4% and 6%, the graphitization index (GI) decreased to 2.98, 2.58 and 2.41 respectively: the corresponding crystallinity improved significantly. When the surfactant SDBS content was higher (10%), the diameter distribution of the h-BN powders was even, but there was evidence of agglomeration of particles and particle adhesion. The crystallinity decreased when the GI value was increased to 4. When the surfactant SDBS content was 6%, the dispersion of h-BN powders was at its optimum, and the particle size distribution was at its most uniform. Meanwhile the GI value was at its lowest, and the crystallinity at its highest. PMID:26369229

  15. A two-dimensional photonic crystal with six large bandgaps formed by a hexagonal lattice of anisotropic cylinders

    Institute of Scientific and Technical Information of China (English)

    庄飞; 吴良; 何赛灵

    2002-01-01

    The plane-wave expansion method is used to calculate the band structure of a two-dimensional photonic crystalformed by a hexagonal structure of anisotropic cylinders. Two cylindrical inclusions in the unit cell have two differentradii, R1 and R2 (Ri<R2). By reducing the symmetry of the structure and choosing appropriately parameters R2and s = R1/R2 (s<1), we obtain six large complete bandgaps, among which three are over 0.05 ωe (where ωe = 2πc/a)in the high region of the normalized frequency (however, one of these over 0.065 ωe is not stable). There are two otherstable complete bandgaps in the low-frequency region.

  16. A two—dimensional photonic crystal with six large bandgaps formed by a hexagonal lattice of anisotropic cylinders

    Institute of Scientific and Technical Information of China (English)

    庄飞; 吴良; 等

    2002-01-01

    The plane-wave expansion method is used to calculate the band structure of a two-dimensional photonic crystal formed by a hexagonal structure of anisotropic cylinders.Two cylindrical inclusions in the unit cell have two different radii,R1 and R2(R1

  17. van der Waals heterostructures of germanene, stanene, and silicene with hexagonal boron nitride and their topological domain walls

    Science.gov (United States)

    Wang, Maoyuan; Liu, Liping; Liu, Cheng-Cheng; Yao, Yugui

    2016-04-01

    We investigate van der Waals (vdW) heterostructures made of germanene, stanene, or silicene with hexagonal boron nitride (h-BN). The intriguing topological properties of these buckled honeycomb materials can be maintained and further engineered in the heterostructures, where the competition between the substrate effect and external electric fields can be used to control the tunable topological phase transitions. Using such heterostructures as building blocks, various vdW topological domain walls (DW) are designed, along which there exist valley polarized quantum spin Hall edge states or valley-contrasting edge states which are protected by valley(spin)- resolved topological charges and can be tailored by the patterning of the heterojunctions and by external fields.

  18. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zuo, Zheng; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States)

    2015-11-23

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.

  19. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes

  20. Inversion of Spin Signal and Spin Filtering in Ferromagnet|Hexagonal Boron Nitride-Graphene van der Waals Heterostructures

    Science.gov (United States)

    Kamalakar, M. Venkata; Dankert, André; Kelly, Paul J.; Dash, Saroj P.

    2016-02-01

    Two dimensional atomically thin crystals of graphene and its insulating isomorph hexagonal boron nitride (h-BN) are promising materials for spintronic applications. While graphene is an ideal medium for long distance spin transport, h-BN is an insulating tunnel barrier that has potential for efficient spin polarized tunneling from ferromagnets. Here, we demonstrate the spin filtering effect in cobalt|few layer h-BN|graphene junctions leading to a large negative spin polarization in graphene at room temperature. Through nonlocal pure spin transport and Hanle precession measurements performed on devices with different interface barrier conditions, we associate the negative spin polarization with high resistance few layer h-BN|ferromagnet contacts. Detailed bias and gate dependent measurements reinforce the robustness of the effect in our devices. These spintronic effects in two-dimensional van der Waals heterostructures hold promise for future spin based logic and memory applications.

  1. Synthesis and radiation response of BCON: a graphene oxide and hexagonal boron nitride hybrid

    Science.gov (United States)

    Bhimanapati, Ganesh R.; Wetherington, Maxwell; Mahabir, Shawn; Robinson, Joshua A.

    2016-06-01

    Since graphene, there has been a focus on several two-dimensional material systems (e.g. boron nitride, borocarbon nitride (BCN), transition-metal dichalcogenides) that provide an even wider array of unique chemistries and properties to explore future applications. Specifically, tailoring graphene/boron nitride heterostructures—which can theoretically retain the character of a single-atom thick sheet, withstand large physical strains, are easily functionalized, and have entirely different optical and mechanical properties compared to graphene—can provide the foundation for entirely new research avenues. In recent years, it has been shown that because of the similar crystal structure, carbon, boron, and nitrogen can co-exist as atomic sheets in a layered structure. We have developed a facile method of integrating boron nitride (hBN) and graphene oxide (GO) via chemical exfoliation which we refer to as BCON. The study of the stability of this material at different pH conditions indicates a stable and a uniform solution is achievable at pH 4–8. X-Ray Photoelectron Spectroscopy helped to identify the new bonds which indicated the formation of BCON linkage. Further, an in situ XPS technique was used to understand the chemical changes while exposing it to ionization radiation specially focusing on the C/O ratio. It was observed that even with a very low energy source, this material is highly sensitive to ionizing radiation, such as neutron, alpha and beta particles.

  2. CO oxidation catalyzed by the single Co atom embedded hexagonal boron nitride nanosheet: a DFT-D study.

    Science.gov (United States)

    Lu, Zhansheng; Lv, Peng; Liang, Yanli; Ma, Dongwei; Zhang, Yi; Zhang, Wenjin; Yang, Xinwei; Yang, Zongxian

    2016-08-21

    A single metal atom stabilized on two dimensional materials (such as graphene and h-BN) exhibits extraordinary activity in the oxidation of CO. The oxidation of CO by molecular O2 on a single cobalt atom embedded in a hexagonal boron nitride monolayer (h-BN) is investigated using first-principles calculations with dispersion-correction. It is found that the single Co atom prefers to reside in a boron vacancy and possesses great stability. There are three mechanisms for CO oxidation: the traditional Eley-Rideal (ER) and Langmuir-Hinshelwood (LH) mechanisms and the termolecular Eley-Rideal (TER) mechanism proposed recently. Given the relatively small reaction barriers of the rate-limiting steps for the ER, LH and TER mechanisms (0.59, 0.55 and 0.41 eV, respectively), all three mechanisms are able to occur at low temperature. The current study may provide useful clues to develop low cost single atom catalysts. PMID:27436673

  3. Copper atoms embedded in hexagonal boron nitride as potential catalysts for CO oxidation: A first-principles investigation

    KAUST Repository

    Liu, Xin

    2014-01-01

    We addressed the electronic structure of Cu atoms embedded in hexagonal boron nitride (h-BN) and their catalytic role in CO oxidation by first-principles-based calculations. We showed that Cu atoms prefer to bind directly with the localized defects on h-BN, which act as strong trapping sites for Cu atoms and inhibit their clustering. The strong binding of Cu atoms at boron vacancy also up-shifts the energy level of Cu-d states to the Fermi level and promotes the formation of peroxide-like intermediate. CO oxidation over Cu atoms embedded in h-BN would proceed through the Langmuir-Hinshelwood mechanism with the formation of a peroxide-like complex by reaction of coadsorbed CO and O2, with the dissociation of which the a CO2 molecule and an adsorbed O atom are formed. Then, the embedded Cu atom is regenerated by the reaction of another gaseous CO with the remnant O atom. The calculated energy barriers for the formation and dissociation of peroxide complex and regeneration of embedded Cu atoms are as low as 0.26, 0.11 and 0.03 eV, respectively, indicating the potential high catalytic performance of Cu atoms embedded in h-BN for low temperature CO oxidation. © the Partner Organisations 2014.

  4. Effect of the hexagonal phase interlayer on rectification properties of boron nitride heterojunctions to silicon

    International Nuclear Information System (INIS)

    Rectification properties of boron nitride/silicon p-n heterojunction diodes fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition are studied in terms of the resistive sp2-bonded boron nitride (sp2BN) interlayer. A two-step biasing technique is developed to control the fraction of cubic boron nitride (cBN) phase and, hence, the thickness of the sp2BN interlayer in the films. The rectification ratio at room temperature is increased up to the order of 104 at ±10 V of biasing with increasing the sp2BN thickness up to around 130 nm due to suppression of the reverse leakage current. The variation of the ideality factor in the low bias region is related to the interface disorders and defects, not to the sp2BN thickness. The forward current follows the Frenkel-Poole emission model in the sp2BN interlayer at relatively high fields when the anomalous effect is assumed. The transport of the minority carriers for reverse current is strongly limited by the high bulk resistance of the thick sp2BN interlayer, while that of the major carriers for forward current is much less affected

  5. Effect of the hexagonal phase interlayer on rectification properties of boron nitride heterojunctions to silicon

    Energy Technology Data Exchange (ETDEWEB)

    Teii, K., E-mail: teii@asem.kyushu-u.ac.jp; Ito, H.; Katayama, N. [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Matsumoto, S. [Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan); Exploratory Materials Research Laboratory for Energy and Environment, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2015-02-07

    Rectification properties of boron nitride/silicon p-n heterojunction diodes fabricated under low-energy ion impact by plasma-enhanced chemical vapor deposition are studied in terms of the resistive sp{sup 2}-bonded boron nitride (sp{sup 2}BN) interlayer. A two-step biasing technique is developed to control the fraction of cubic boron nitride (cBN) phase and, hence, the thickness of the sp{sup 2}BN interlayer in the films. The rectification ratio at room temperature is increased up to the order of 10{sup 4} at ±10 V of biasing with increasing the sp{sup 2}BN thickness up to around 130 nm due to suppression of the reverse leakage current. The variation of the ideality factor in the low bias region is related to the interface disorders and defects, not to the sp{sup 2}BN thickness. The forward current follows the Frenkel-Poole emission model in the sp{sup 2}BN interlayer at relatively high fields when the anomalous effect is assumed. The transport of the minority carriers for reverse current is strongly limited by the high bulk resistance of the thick sp{sup 2}BN interlayer, while that of the major carriers for forward current is much less affected.

  6. Generation and characterization of anisotropic microstructures in rare earth-iron-boron alloys

    Science.gov (United States)

    Oster, Nathaniel

    The automotive industry is currently being directed toward electrification of their fleets. In order to provide these hybrid or electric vehicles, lightweight high torque electric motors are needed. Permanent magnet (PM) brushless motors have been identified as the preferred motors for these applications. In order to effectively provide these motors, cost-effective high strength PMs are needed. The use of polymer bonded PMs is one method to reduce processing costs, but performance is decreased unless anisotropic PMs can be formed. New processing methods to form anisotropic mixed rare earth (MRE)-iron-boron PM particulate were studied in this work. Two primary processing routes were identified and investigated: controlled devitrification through application of uniaxial pressure and rapid directional solidification utilizing a segregating additive. In addition, further control of the melt-spinning process was achieved through control of wheel surface temperature and finish. Controlled devitrification was found to produce an anisotropic, nanocrystalline microstructure, as observed through TEM and XRD studies. A high defect density within the structure, unprecedented in RE2Fe14B microstructures, was observed. It is surmised that the defects cause soft magnetic behavior. Stabilization of a columnar, textured microstructure was achieved through the utilization of moderate wheel speeds during melt-spinning, in combination with minor additions of Ag to the alloy. The texture was seen to be altered from that typically seen in RE2Fe14B alloys melt-spun at low-to-moderate wheel speeds. It was observed that this occurs through a modification in the solidification pathway, catalyzed by the addition of Ag. In addition to the altered texture, the presence of fine precipitates within the matrix and varying interdendritic phases was observed. Alteration of wheel surface temperature and surface finish was seen to have significant effects on the ability to form amorphous material in

  7. Stability and electronic structure of iron nanoparticle anchored on defective hexagonal boron nitrogen nanosheet: A first-principle study

    International Nuclear Information System (INIS)

    Highlights: • Fe13 nanoparticle strongly interacts with the monovacancy of h-BN nanosheet. • Significant charges are transferred from Fe13 to the defective h-BN nanosheet. • The upshift of d-band center makes the surface Fe atoms of supported Fe13 with higher reactivity. - Abstract: By first-principle methods, we investigate the stability and electronic structures of Fe13 nanoparticles anchored on hexagonal boron nitrogen nanosheets (h-BNNSs) with monovacancy defect sites. It is found that the defect sites such as boron and nitrogen vacancy significantly increase the adsorption energies of Fe13, suggesting that the supported Fe13 nanoparticles should be very stable against sintering at high temperatures. From the calculated density of states, we testify that the strong interaction is attributed to the coupling between the 3d orbitals of Fe atoms with the sp2 dangling bonds at the defect sites. The Bader charge and differential charge density analyses reveal that there is significant charge redistribution at the interface between Fe13 and the substrates, leading to positive charges located on most of the Fe atoms. Additionally, our results show that the strong binding of the nanoparticle results in the upshift of d-band center of Fe13 toward the Fermi level, thus making the surface Fe atoms with higher reactivity. This work gives a detailed understanding the interaction between Fe13 nanoparticle and defective h-BNNS and will provide helpful instructions in the design and synthesis of supported Fe-based catalysts in heterogeneous catalysis

  8. The origins of near band-edge transitions in hexagonal boron nitride epilayers

    International Nuclear Information System (INIS)

    Photoluminescence spectroscopy has been employed to probe the near band-edge transitions in hexagonal BN (h-BN) epilayers synthesized under varying ammonia flow rates. The results suggest that the quasi-donor-acceptor pair emission line at 5.3 eV is due to the transition between the nitrogen vacancy and a deep acceptor, whereas the 5.5 eV emission line is due to the recombination of an exciton bound to a deep acceptor formed by carbon impurity occupying the nitrogen site. By growing h-BN under high ammonia flow rates, nitrogen vacancy related peaks can be eliminated and epilayers exhibiting pure free exciton emission have been obtained

  9. The origins of near band-edge transitions in hexagonal boron nitride epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Du, X. Z.; Li, J.; Lin, J. Y.; Jiang, H. X., E-mail: hx.jiang@ttu.edu [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2016-02-01

    Photoluminescence spectroscopy has been employed to probe the near band-edge transitions in hexagonal BN (h-BN) epilayers synthesized under varying ammonia flow rates. The results suggest that the quasi-donor-acceptor pair emission line at 5.3 eV is due to the transition between the nitrogen vacancy and a deep acceptor, whereas the 5.5 eV emission line is due to the recombination of an exciton bound to a deep acceptor formed by carbon impurity occupying the nitrogen site. By growing h-BN under high ammonia flow rates, nitrogen vacancy related peaks can be eliminated and epilayers exhibiting pure free exciton emission have been obtained.

  10. In situ observations during chemical vapor deposition of hexagonal boron nitride on polycrystalline copper

    DEFF Research Database (Denmark)

    Kidambi, Piran R.; Blume, Raoul; Kling, Jens;

    2014-01-01

    suggest that B is taken up in the Cu catalyst while N is not (by relative amounts), indicating element-specific feeding mechanisms including the bulk of the catalyst. We further show that oxygen intercalation readily occurs under as-grown h-BN during ambient air exposure, as is common in further...... processing, and that this negatively affects the stability of h-BN on the catalyst. For extended air exposure Cu oxidation is observed, and upon re-heating in vacuum an oxygen-mediated disintegration of the h-BN film via volatile boron oxides occurs. Importantly, this disintegration is catalyst mediated, i.......e., occurs at the catalyst/h-BN interface and depends on the level of oxygen fed to this interface. In turn, however, deliberate feeding of oxygen during h-BN deposition can positively affect control over film morphology. We discuss the implications of these observations in the context of corrosion...

  11. Alkylamine-functionalized hexagonal boron nitride nanoplatelets as a novel material for the reduction of friction and wear.

    Science.gov (United States)

    Kumari, Sangita; Sharma, Om P; Khatri, Om P

    2016-08-17

    Hexagonal boron nitride nanoplatelets (h-BNNPs), which are structurally analogous to graphene, were prepared via the ultrasound-assisted exfoliation of h-BN powder using N-methyl pyrrolidone as the solvent. The alkylamines with variable alkyl chains and electron-rich nitrogen atoms were grafted onto the boron sites of the h-BNNPs based on Lewis acid-base chemistry. The grafting of the alkylamines onto the h-BNNPs was confirmed using FTIR, XPS, TGA and (13)C SSNMR analyses. The crystalline and structural features of the alkylamine-functionalized h-BNNPs were studied using XRD and HRTEM analyses. The TGA and FTIR results revealed a higher grafting of octadecylamine (ODA) on the h-BNNPs compared to trioctylamine (TOA). The cohesive interaction between the alkyl chains grafted onto the h-BNNPs and the hydrocarbon chains of mineral lube base oil facilitates the dispersion of the alkylamine-functionalized h-BNNPs. The TOA-grafted h-BNNPs (h-BNNPs-TOA) exhibited long-term dispersion stability compared to the ODA-grafted h-BNNPs and this was attributed to a higher degree of van der Waals interactions between the octyl chains of the TOA molecules grafted onto the h-BNNPs and the hydrocarbon chains of the mineral lube base oil. The tribo-performance of the h-BNNPs-TOA as an additive to mineral lube base oil was evaluated in terms of the coefficient of friction and wear using ball-on-disc contact geometry. A minute dosing (0.02 mg mL(-1)) of h-BNNPs-TOA significantly improved the lubrication characteristics of the mineral lube base oil and showed a 35 and 25% reduction of friction and wear, respectively. The presence of boron and nitrogen on the worn scar of an aluminium disc, as deduced from elemental mapping, confirmed the formation of a tribo-chemical thin film of h-BN lamellae on the contact interfaces, which not only reduced the friction but also protected the contact interfaces against undesirable wear events. PMID:27484045

  12. Negative Refraction with Superior Transmission in Graphene-Hexagonal Boron Nitride (hBN) Multilayer Hyper Crystal

    Science.gov (United States)

    Sayem, Ayed Al; Rahman, Md. Masudur; Mahdy, M. R. C.; Jahangir, Ifat; Rahman, Md. Saifur

    2016-05-01

    In this article, we have theoretically investigated the performance of graphene-hexagonal Boron Nitride (hBN) multilayer structure (hyper crystal) to demonstrate all angle negative refraction along with superior transmission. hBN, one of the latest natural hyperbolic materials, can be a very strong contender to form a hyper crystal with graphene due to its excellence as a graphene-compatible substrate. Although bare hBN can exhibit negative refraction, the transmission is generally low due to its high reflectivity. Whereas due to graphene’s 2D nature and metallic characteristics in the frequency range where hBN behaves as a type-I hyperbolic material, we have found graphene-hBN hyper-crystals to exhibit all angle negative refraction with superior transmission. Interestingly, superior transmission from the whole structure can be fully controlled by the tunability of graphene without hampering the negative refraction originated mainly from hBN. We have also presented an effective medium description of the hyper crystal in the low-k limit and validated the proposed theory analytically and with full wave simulations. Along with the current extensive research on hybridization of graphene plasmon polaritons with (hyperbolic) hBN phonon polaritons, this work might have some substantial impact on this field of research and can be very useful in applications such as hyper-lensing.

  13. Modulation of the band structure in bilayer zigzag graphene nanoribbons on hexagonal boron nitride using the force and electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Ilyasov, V.V., E-mail: viily@mail.ru [Don State Technical University, Rostov on Don, 344000 (Russian Federation); Nguyen, Chuong V., E-mail: chuongnguyen11@gmail.com [Don State Technical University, Rostov on Don, 344000 (Russian Federation); Ershov, I.V. [Don State Technical University, Rostov on Don, 344000 (Russian Federation); Nguyen, Chien D. [Institute of Engineering Physics, Hanoi University of Science and Technology, Hanoi, 10000 (Viet Nam); Hieu, Nguyen N. [Institute of Research and Development, Duy Tan University, Da Nang (Viet Nam)

    2015-03-15

    Modulation of semiconductor–halfmetal–metal transition in the antiferromagnetic (AF) ordering of bilayer zigzag graphene nanoribbons (BZGNRs) on hexagonal boron nitride (h-BN) heterostructure using the external force field F{sub ext} and transverse electric fields E{sub ext} (in the presence of interaction with the substrate) was performed within the framework of the density functional theory (DFT). We established critical values of E{sub ext} and interlayer distance in the bilayer providing for semiconductor–halfmetal–metal transition in one of electron spin configurations. Our calculations also show that the energy gap E{sub g} in the AF-BZGNR/h-BN(0001) heterostructure can be controlled in a wide range of the F{sub ext} and E{sub ext}. This makes the AF-8-ZGNR/h-BN(0001) heterostructure being potentially promising for application in spintronic devices. - Highlights: • We used DFT to examine the opportunities for modulation of the band structure in AF-8-BZGNR/h-BN(0001). • We estimated the critical values of the F{sub ext} and E{sub ext} providing for SC-HM-M transition. • The energy gap in the AF-BZGNR/h-BN(0001) can be monitored in a wide range of the F{sub ext} and E{sub ext}.

  14. Torsional properties of hexagonal boron nitride nanotubes, carbon nanotubes and their hybrid structures: A molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, Qi-lin, E-mail: xiongql@hust.edu.cn [Department of Mechanics, Huazhong University of Science & Technology, 1037 Luoyu Road, Wuhan 430074 (China); Hubei Key Laboratory of Engineering Structural Analysis and Safety Assessment, Luoyu Road 1037, Wuhan 430074 (China); Tian, Xiao Geng [State Key Laboratory for Mechanical Structure Strength and Vibration, Xi’an Jiaotong University, Xi’an 710049 (China)

    2015-10-15

    The torsional mechanical properties of hexagonal single-walled boron nitride nanotubes (SWBNNTs), single-walled carbon nanotubes (SWCNTs), and their hybrid structures (SWBN-CNTs) are investigated using molecular dynamics (MD) simulation. Two approaches - force approach and energy approach, are adopted to calculate the shear moduli of SWBNNTs and SWCNTs, the discrepancy between two approaches is analyzed. The results show that the shear moduli of single-walled nanotubes (SWNTs), including SWBNNTs and SWCNTs are dependent on the diameter, especially for armchair SWNTs. The armchair SWNTs show the better ability of resistance the twisting comparable to the zigzag SWNTs. The effects of diameter and length on the critical values of torque of SWNTs are obtained by comparing the torsional behaviors of SWNTs with different diameters and different lengths. It is observed that the MD results of the effect of diameter and length on the critical values of torque agrees well with the prediction of continuum shell model. The shear modulus of SWBN-CNT has a significant dependence on the percentages of SWCNT and the hybrid style has also an influence on shear modulus. The critical values of torque of SWBN-CNTs increase with the increase of the percentages of SWCNT. This phenomenon can be interpreted by the function relationship between the torque of different bonds (B-N-X, C-C-X, C-B-X, C-N-X) and the angles of bonds.

  15. Torsional properties of hexagonal boron nitride nanotubes, carbon nanotubes and their hybrid structures: A molecular dynamics study

    Directory of Open Access Journals (Sweden)

    Qi-lin Xiong

    2015-10-01

    Full Text Available The torsional mechanical properties of hexagonal single-walled boron nitride nanotubes (SWBNNTs, single-walled carbon nanotubes (SWCNTs, and their hybrid structures (SWBN-CNTs are investigated using molecular dynamics (MD simulation. Two approaches - force approach and energy approach, are adopted to calculate the shear moduli of SWBNNTs and SWCNTs, the discrepancy between two approaches is analyzed. The results show that the shear moduli of single-walled nanotubes (SWNTs, including SWBNNTs and SWCNTs are dependent on the diameter, especially for armchair SWNTs. The armchair SWNTs show the better ability of resistance the twisting comparable to the zigzag SWNTs. The effects of diameter and length on the critical values of torque of SWNTs are obtained by comparing the torsional behaviors of SWNTs with different diameters and different lengths. It is observed that the MD results of the effect of diameter and length on the critical values of torque agrees well with the prediction of continuum shell model. The shear modulus of SWBN-CNT has a significant dependence on the percentages of SWCNT and the hybrid style has also an influence on shear modulus. The critical values of torque of SWBN-CNTs increase with the increase of the percentages of SWCNT. This phenomenon can be interpreted by the function relationship between the torque of different bonds (B-N-X, C-C-X, C-B-X, C-N-X and the angles of bonds.

  16. Negative Refraction with Superior Transmission in Graphene-Hexagonal Boron Nitride (hBN) Multilayer Hyper Crystal

    Science.gov (United States)

    Sayem, Ayed Al; Rahman, Md. Masudur; Mahdy, M. R. C.; Jahangir, Ifat; Rahman, Md. Saifur

    2016-01-01

    In this article, we have theoretically investigated the performance of graphene-hexagonal Boron Nitride (hBN) multilayer structure (hyper crystal) to demonstrate all angle negative refraction along with superior transmission. hBN, one of the latest natural hyperbolic materials, can be a very strong contender to form a hyper crystal with graphene due to its excellence as a graphene-compatible substrate. Although bare hBN can exhibit negative refraction, the transmission is generally low due to its high reflectivity. Whereas due to graphene’s 2D nature and metallic characteristics in the frequency range where hBN behaves as a type-I hyperbolic material, we have found graphene-hBN hyper-crystals to exhibit all angle negative refraction with superior transmission. Interestingly, superior transmission from the whole structure can be fully controlled by the tunability of graphene without hampering the negative refraction originated mainly from hBN. We have also presented an effective medium description of the hyper crystal in the low-k limit and validated the proposed theory analytically and with full wave simulations. Along with the current extensive research on hybridization of graphene plasmon polaritons with (hyperbolic) hBN phonon polaritons, this work might have some substantial impact on this field of research and can be very useful in applications such as hyper-lensing. PMID:27146561

  17. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Zheng, Jian-Guo; Liu, Jianlin

    2016-07-01

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5-6 nm)/G (26-27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ˜2.5-3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  18. Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devices.

    Science.gov (United States)

    Bresnehan, Michael S; Hollander, Matthew J; Wetherington, Maxwell; LaBella, Michael; Trumbull, Kathleen A; Cavalero, Randal; Snyder, David W; Robinson, Joshua A

    2012-06-26

    Hexagonal boron nitride (h-BN) is a promising dielectric material for graphene-based electronic devices. Here we investigate the potential of h-BN gate dielectrics, grown by chemical vapor deposition (CVD), for integration with quasi-freestanding epitaxial graphene (QFEG). We discuss the large scale growth of h-BN on copper foil via a catalytic thermal CVD process and the subsequent transfer of h-BN to a 75 mm QFEG wafer. X-ray photoelectron spectroscopy (XPS) measurements confirm the absence of h-BN/graphitic domains and indicate that the film is chemically stable throughout the transfer process, while Raman spectroscopy indicates a 42% relaxation of compressive stress following removal of the copper substrate and subsequent transfer of h-BN to QFEG. Despite stress-induced wrinkling observed in the films, Hall effect measurements show little degradation (Graphene transistors utilizing h-BN gates exhibit peak intrinsic cutoff frequencies >30 GHz (2.4× that of HfO(2)-based devices). PMID:22545808

  19. Fluorinated graphene and hexagonal boron nitride as ALD seed layers for graphene-based van der Waals heterostructures

    International Nuclear Information System (INIS)

    Ultrathin dielectric materials prepared by atomic-layer-deposition (ALD) technology are commonly used in graphene electronics. Using the first-principles density functional theory calculations with van der Waals (vdW) interactions included, we demonstrate that single-side fluorinated graphene (SFG) and hexagonal boron nitride (h-BN) exhibit large physical adsorption energy and strong electrostatic interactions with H2O-based ALD precursors, indicating their potential as the ALD seed layer for dielectric growth on graphene. In graphene-SFG vdW heterostructures, graphene is n-doped after ALD precursor adsorption on the SFG surface caused by vertical intrinsic polarization of SFG. However, graphene-h-BN vdW heterostructures help preserving the intrinsic characteristics of the underlying graphene due to in-plane intrinsic polarization of h-BN. By choosing SFG or BN as the ALD seed layer on the basis of actual device design needs, the graphene vdW heterostructures may find applications in low-dimensional electronics. (paper)

  20. van der Waals epitaxy of monolayer hexagonal boron nitride on copper foil: growth, crystallography and electronic band structure

    Science.gov (United States)

    Wood, Grace E.; Marsden, Alexander J.; Mudd, James J.; Walker, Marc; Asensio, Maria; Avila, Jose; Chen, Kai; Bell, Gavin R.; Wilson, Neil R.

    2015-06-01

    We investigate the growth of hexagonal boron nitride (h-BN) on copper foil by low pressure chemical vapour deposition (LP-CVD). At low pressure, h-BN growth proceeds through the nucleation and growth of triangular islands. Comparison between the orientation of the islands and the local crystallographic orientation of the polycrystalline copper foil reveals an epitaxial relation between the copper and h-BN, even on Cu(100) and Cu(110) regions whose symmetry is not matched to the h-BN. However, the growth rate is faster and the islands more uniformly oriented on Cu(111) grains. Angle resolved photoemission spectroscopy measurements reveal a well-defined band structure for the h-BN, consistent with a band gap of 6 eV, that is decoupled from the copper surface beneath. These results indicate that, despite a weak interaction between h-BN and copper, van der Waals epitaxy defines the long range ordering of h-BN even on polycrystalline copper foils and suggest that large area, single crystal, monolayer h-BN could be readily and cheaply produced.

  1. Alkyl-chain-grafted hexagonal boron nitride nanoplatelets as oil-dispersible additives for friction and wear reduction.

    Science.gov (United States)

    Kumari, Sangita; Sharma, Om P; Gusain, Rashi; Mungse, Harshal P; Kukrety, Aruna; Kumar, Niranjan; Sugimura, Hiroyuki; Khatri, Om P

    2015-02-18

    Hexagonal boron nitride (h-BN), an isoelectric analogous to graphene multilayer, can easily shear at the contact interfaces and exhibits excellent mechanical strength, higher thermal stability, and resistance toward oxidation, which makes it a promising material for potential lubricant applications. However, the poor dispersibility of h-BN in lube base oil has been a major obstacle. Herein, h-BN powder was exfoliated into h-BN nanoplatelets (h-BNNPs), and then long alkyl chains were chemically grafted, targeting the basal plane defect and edge sites of h-BNNPs. The chemical and structural features of octadecyltriethoxysilane-functionalized h-BNNPs (h-BNNPs-ODTES) were studied by FTIR, XPS, XRD, HRTEM, and TGA analyses. The h-BNNPs-ODTES exhibit long-term dispersion stability in synthetic polyol ester lube base oil because of van der Waals interaction between the octadecyl chains of h-BNNPs-ODTES and alkyl functionalities of polyol ester. Micro- and macrotribology results showed that h-BNNPs-ODTES, as an additive to synthetic polyol ester, significantly reduced both the friction and wear of steel disks. Elemental mapping of the worn area explicitly demonstrates the transfer of h-BNNPs-ODTES on the contact interfaces. Furthermore, insight into the lubrication mechanism for reduction in both friction and wear is deduced based on the experimental results. PMID:25625695

  2. High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers.

    Science.gov (United States)

    Hemmi, A; Bernard, C; Cun, H; Roth, S; Klöckner, M; Kälin, T; Weinl, M; Gsell, S; Schreck, M; Osterwalder, J; Greber, T

    2014-03-01

    The setup of an apparatus for chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported. It provides well-controlled preparation conditions, such as oxygen and argon plasma assisted cleaning and high temperature annealing. In situ characterization of a wafer is accomplished with target current spectroscopy. A piezo motor driven x-y stage allows measurements with a step size of 1 nm on the complete wafer. To benchmark the system performance, we investigated the growth of single layer h-BN on epitaxial Rh(111) thin films. A thorough analysis of the wafer was performed after cutting in atmosphere by low energy electron diffraction, scanning tunneling microscopy, and ultraviolet and X-ray photoelectron spectroscopies. The apparatus is located in a clean room environment and delivers high quality single layers of h-BN and thus grants access to large area UHV processed surfaces, which had been hitherto restricted to expensive, small area single crystal substrates. The facility is versatile enough for customization to other UHV-CVD processes, e.g., graphene on four-inch wafers. PMID:24689614

  3. Torsional properties of hexagonal boron nitride nanotubes, carbon nanotubes and their hybrid structures: A molecular dynamics study

    International Nuclear Information System (INIS)

    The torsional mechanical properties of hexagonal single-walled boron nitride nanotubes (SWBNNTs), single-walled carbon nanotubes (SWCNTs), and their hybrid structures (SWBN-CNTs) are investigated using molecular dynamics (MD) simulation. Two approaches - force approach and energy approach, are adopted to calculate the shear moduli of SWBNNTs and SWCNTs, the discrepancy between two approaches is analyzed. The results show that the shear moduli of single-walled nanotubes (SWNTs), including SWBNNTs and SWCNTs are dependent on the diameter, especially for armchair SWNTs. The armchair SWNTs show the better ability of resistance the twisting comparable to the zigzag SWNTs. The effects of diameter and length on the critical values of torque of SWNTs are obtained by comparing the torsional behaviors of SWNTs with different diameters and different lengths. It is observed that the MD results of the effect of diameter and length on the critical values of torque agrees well with the prediction of continuum shell model. The shear modulus of SWBN-CNT has a significant dependence on the percentages of SWCNT and the hybrid style has also an influence on shear modulus. The critical values of torque of SWBN-CNTs increase with the increase of the percentages of SWCNT. This phenomenon can be interpreted by the function relationship between the torque of different bonds (B-N-X, C-C-X, C-B-X, C-N-X) and the angles of bonds

  4. A comparison of electronic transport properties of graphene with hexagonal boron nitride substrate and graphane, a first principle study

    Science.gov (United States)

    Pashangpour, Mansoureh; Bagheri, Zargham; Ghaffari, Vahid

    2013-06-01

    In this paper, a first-principle investigation of the electronic properties of graphene on hexagonal boron nitride substrate, and of one-sided and two-sided fully saturated hydrocarbons with C-H formula derived from a single sheet of graphene, tablelike and chairlike graphane, are presented within density functional theory (DFT). We obtain the most stable orientation of graphene on the substrate, the adsorption energy, the charge transfer and density of states (DOS) for these systems. We discuss the changes in the density of states as well as the extent of charge transfer, band gap and finally quantum conductivity and current for graphene due to the presence of the substrate and H atoms. We show that the band gap of 64 meV induced by the BN substrate can greatly improve the electrical characteristics of graphene-based field effect transistors (FETs) and its on/off ratio and decreases the minimum conductance by a factor three. We identify that the substrate is acting as a donor for graphene layer and graphene is acting as an acceptor with respect to H atoms after saturation with hydrogen. We show that graphene on h-BN substrate has higher on/off ratio respect to pristine graphene and higher conductance respect to tablelike graphane.

  5. Temperature dependent structural properties and bending rigidity of pristine and defective hexagonal boron nitride

    Science.gov (United States)

    Thomas, Siby; Ajith, K. M.; Chandra, Sharat; Valsakumar, M. C.

    2015-08-01

    Structural and thermodynamical properties of monolayer pristine and defective boron nitride sheets (h-BN) have been investigated in a wide temperature range by carrying out atomistic simulations using a tuned Tersoff-type inter-atomic empirical potential. The temperature dependence of lattice parameter, radial distribution function, specific heat at constant volume, linear thermal expansion coefficient and the height correlation function of the thermally excited ripples on pristine as well as defective h-BN sheet have been investigated. Specific heat shows considerable increase beyond the Dulong-Petit limit at high temperatures, which is interpreted as a signature of strong anharmonicity present in h-BN. Analysis of the height fluctuations, , shows that the bending rigidity and variance of height fluctuations are strongly temperature dependent and this is explained using the continuum theory of membranes. A detailed study of the height-height correlation function shows deviation from the prediction of harmonic theory of membranes as a consequence of the strong anharmonicity in h-BN. It is also seen that the variance of the height fluctuations increases with defect concentration.

  6. Pt atoms stabilized on hexagonal boron nitride as efficient single-atom catalysts for CO oxidation: A first-principles investigation

    KAUST Repository

    Liu, Xin

    2015-01-01

    Taking CO oxidation as a probe, we investigated the electronic structure and reactivity of Pt atoms stabilized by vacancy defects on hexagonal boron nitride (h-BN) by first-principles-based calculations. As a joint effect of the high reactivity of both a single Pt atom and a boron vacancy defect (PtBV), the Pt-N interaction is -4.40 eV and is already strong enough to prohibit the diffusion and aggregation of the stabilized Pt atom. Facilitated by the upshifted Pt-d states originated from the Pt-N interaction, the barriers for CO oxidation through the Langmuir-Hinshelwood mechanism for formation and dissociation of peroxide-like intermediate and the regeneration are as low as 0.38, 0.10 and 0.04 eV, respectively, suggesting the superiority of PtBV as a catalyst for low temperature CO oxidation.

  7. A platform for large-scale graphene electronics--CVD growth of single-layer graphene on CVD-grown hexagonal boron nitride.

    Science.gov (United States)

    Wang, Min; Jang, Sung Kyu; Jang, Won-Jun; Kim, Minwoo; Park, Seong-Yong; Kim, Sang-Woo; Kahng, Se-Jong; Choi, Jae-Young; Ruoff, Rodney S; Song, Young Jae; Lee, Sungjoo

    2013-05-21

    Direct chemical vapor deposition (CVD) growth of single-layer graphene on CVD-grown hexagonal boron nitride (h-BN) film can suggest a large-scale and high-quality graphene/h-BN film hybrid structure with a defect-free interface. This sequentially grown graphene/h-BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h-BN film, and suggests a new promising template for graphene device fabrication. PMID:23576235

  8. Macropolyhedral boron-containing cluster chemistry. The reversible disassembly and reassembly of the hexagonal pyramidal {B7} feature in the [S2B18H19]- anion.

    Science.gov (United States)

    Ormsby, Daniel L; Greatrex, Robert; Kennedy, John D

    2008-03-28

    The [S(2)B(18)H(19)](-) anion 1, from syn-B(18)H(22) 2 with NaH and elemental sulfur, has an unusual arachno-type eleven-vertex {SB(10)} subcluster that has an open hexagonal pyramidal {B(7)} structural feature. This is conjoined, with two boron atoms in common, to a second {SB(10)} subcluster of conventional nido eleven-vertex geometry. Protonation of 1 forms neutral [S(2)B(18)H(20)] 4. Subsequent deprotonation of 4 yields the fluxional [S(2)B(18)H(19)](-) anion 5, which is isomeric with 1. Neutral 4and anion 5 do not have the {B(7)} hexagonal pyramidal feature. Neutral 4 consists of conventional nido eleven-vertex {SB(10)} and arachno ten-vertex {SB(9)} subclusters conjoined with a single spiro boron atom in common. Anion 5 is closely related to 4, but with an additional inter-boron intercluster link. Anion 5 spontaneously reverts to anion 1 over a few hours at room temperature, remarkable in that the open {B(7)} hexagonal pyramid is regenerated. DFT B3LYP/6-31G* calculations suggest definitive structures for 4 and 5 that are substantiated by agreement between observed NMR delta((11)B) values and boron nuclear shielding as calculated by the GIAO approach on the DFT-calculated structures. Extension of this approach additionally defines transition states and intermediates for the fluxionality of 5, and also for the reassembly of the starting anion 1, together with its {B(7)} feature, from fluxional 5. The fluxionality of 5 involves the inter-subcluster transfer of a {BH} unit. The reassembly of 1 from 5 involves a DSD rearrangement and two successive hydrogen-atom hops. Confidence in the application of this method to these large macropolyhedral assemblies is afforded in the first instance by good agreement between delta((11)B)(OBS) and delta((11)B)(CALC) for the structurally characterised original anion 1, the only species amongst these to be crystallographically established. PMID:18335146

  9. Using nano hexagonal boron nitride particles and nano cubic silicon carbide particles to improve the thermal conductivity of electrically conductive adhesives

    Science.gov (United States)

    Cui, Hui-wang; Li, Dong-sheng; Fan, Qiong

    2013-01-01

    To satisfy the high electrical and thermal conductivity required for the continuous development of electronic products, nano hexagonal boron nitride (BN) particles and nano cubic silicon carbide (SiC) particles were added into electrically conductive adhesives (ECAs) to improve the thermal conductivity. BN and SiC had little negative effect on the electrical conductivity, but improved the thermal conductivity significantly. When their content was 1.5 wt. %, the thermal conductivity at 100°C, 150°C and 200°C was increased by 71% (100°C), 78% (150°C) and 70% (200°C), and 114% (100°C), 110% (150°C) and 98% (200°C) respectively for BN and SiC comparing with those of the ECAs with no thermal conductive fillers. This method is simple, easy to do, and can be used practically in electronic packaging.

  10. Influences of growth parameters on the film formation of hexagonal boron nitride thin films grown on sapphire substrates by low-pressure chemical vapor deposition

    Science.gov (United States)

    Umehara, Naoki; Masuda, Atsushi; Shimizu, Takaki; Kuwahara, Iori; Kouno, Tetsuya; Kominami, Hiroko; Hara, Kazuhiko

    2016-05-01

    Hexagonal boron nitride (h-BN) films were grown on c-plane sapphire substrates by low-pressure chemical vapor deposition with BCl3 and NH3 as the boron and nitrogen sources, respectively, and the influences of growth parameters on the film quality were investigated for samples with a thickness of about 1 µm. The dependence of X-ray diffraction on the growth temperature (T g) indicated that the crystalline quality is most improved in the sample grown at 1200 °C, in which the epitaxial relationship of {100}h-BN ∥ {110}sapphire and {001}h-BN ∥ {001}sapphire was confirmed. This condition enhanced lateral growth, resulting in the formation of grains with flat top surfaces. The T g dependence was discussed in relation to the amorphous AlN formed on the substrate surface and the reaction between BCl3 and NH3 in the vapor phase. The correlation between the structural and luminescent properties, which was found from the T g dependence of CL, was also discussed.

  11. Highly anisotropic slip-behavior of pyramidal I 〈c+a〉 dislocations in hexagonal close-packed magnesium

    International Nuclear Information System (INIS)

    In hexagonal-closed-pack (HCP) metals, slip of 〈c+a〉 dislocations on pyramidal planes is considered to be the most difficult slip mode that controls the overall plastic behavior. Nevertheless, pyramidal 〈c+a〉 slip is a requisite for accommodation of c-axis plastic deformation. In the present study, glissile pyramidal 〈c+a〉 dislocations with different characters gliding on type I pyramidal planes, informed by direct atomistic simulations, are reproduced and studied in HCP magnesium single crystals. The Peierls stresses for these dislocations are quantitatively evaluated via molecular dynamics simulations under pure shear loading. A high anisotropy in the Peierls stress is observed for different dislocation characters, with the near-screw having the lowest Peierls stress, and the near-edge dislocations having the highest stress. Local shuffling is also found to significantly reduce the Peierls stress of near-edge dislocations. These quantifications of pyramidal 〈c+a〉 slip provide better understanding of plastic deformation in HCP metals, and also provide necessary inputs for meso-scale dislocation models such as discrete dislocation dynamics simulations and crystal plasticity simulations

  12. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

    Science.gov (United States)

    Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James

    2015-07-28

    Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials. PMID:26083310

  13. Tuning the band structure, magnetic and transport properties of the zigzag graphene nanoribbons/hexagonal boron nitride heterostructures by transverse electric field

    International Nuclear Information System (INIS)

    The paper presents the results of ab initio study of the opportunities for tuning the band structure, magnetic and transport properties of zigzag graphene nanoribbon (8-ZGNR) on hexagonal boron nitride (h-BN(0001)) semiconductor heterostructure by transverse electric field (Eext). This study was performed within the framework of the density functional theory (DFT) using Grimme's (DFT-D2) scheme. We established the critical values of Eext for the 8-ZGNR/h-BN(0001) heterostructure, thereby providing for semiconductor-halfmetal transition in one of electron spin configurations. This study also showed that the degeneration in energy of the localized edge states is removed when Eext is applied. In ZGNR/h-BN (0001) heterostructure, value of the splitting energy was higher than one in ZGNRs without substrate. We determined the effect of low Eext applied to the 8-ZGNR/h-BN (0001) semiconductor heterostructure on the preserved local magnetic moment (LMM) (0.3μB) of edge carbon atoms. The transport properties of the 8-ZGNR/h-BN(0001) semiconductor heterostructure can be controlled using Eext. In particular, at a critical value of the positive potential, the electron mobility can increase to 7× 105 cm2/V s or remain at zero in the spin-up and spin-down electron subsystems, respectively. We established that magnetic moments (MMs), band gaps, and carrier mobility can be altered using Eext. These abilities enable the use of 8-ZGNR/h-BN(0001) semiconductor heterostructure in spintronics

  14. Boron

    International Nuclear Information System (INIS)

    The trace element boron (B) is of interest in reclamation situations for several reasons. It plays an essential through largely unidentified role in the growth of higher plants. In argronomic situations B deficiencies are common, and deficiencies in reclamation situations have been suggested but not documented. Among micronutrients, B is unique because the range from deficient concentrations to toxic concentrations either in the soil solution or in plant tissue is narrower than for any other micronutrient. In reclamation situations excessive amounts of B can occur in the soil or in near-surface mining wastes and thus interfere with reclamation objectives, especially in arid and semiarid regions. Also, B is mobile and appears subject to both upward transport (and possible contamination of overlying material) and downward transport (and possible contamination of surface water and groundwater)

  15. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

    Science.gov (United States)

    Meng, Jun Hua; Zhang, Xing Wang; Wang, Hao Lin; Ren, Xi Biao; Jin, Chuan Hong; Yin, Zhi Gang; Liu, Xin; Liu, Heng

    2015-09-01

    Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were obtained by using the continuous h-BN film as a substrate. Furthermore, the well-designed sub-bilayered h-BN substrates provide direct evidence that the monolayered h-BN on Cu exhibits higher catalytic activity than the bilayered h-BN on Cu. The growth method applied here may have great potential in the scalable preparation of large-area high-quality graphene/h-BN heterostructures.Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were

  16. Tuning the band structure, magnetic and transport properties of the zigzag graphene nanoribbons/hexagonal boron nitride heterostructures by transverse electric field.

    Science.gov (United States)

    Ilyasov, V V; Meshi, B C; Nguyen, V C; Ershov, I V; Nguyen, D C

    2014-07-01

    The paper presents the results of ab initio study of the opportunities for tuning the band structure, magnetic and transport properties of zigzag graphene nanoribbon (8-ZGNR) on hexagonal boron nitride (h-BN(0001)) semiconductor heterostructure by transverse electric field (E(ext)). This study was performed within the framework of the density functional theory (DFT) using Grimme's (DFT-D2) scheme. We established the critical values of E(ext) for the 8-ZGNR/h-BN(0001) heterostructure, thereby providing for semiconductor-halfmetal transition in one of electron spin configurations. This study also showed that the degeneration in energy of the localized edge states is removed when E(ext) is applied. In ZGNR/h-BN (0001) heterostructure, value of the splitting energy was higher than one in ZGNRs without substrate. We determined the effect of low E(ext) applied to the 8-ZGNR/h-BN (0001) semiconductor heterostructure on the preserved local magnetic moment (LMM) (0.3μ(B)) of edge carbon atoms. The transport properties of the 8-ZGNR/h-BN(0001) semiconductor heterostructure can be controlled using E(ext). In particular, at a critical value of the positive potential, the electron mobility can increase to 7× 10(5) cm(2)/V s or remain at zero in the spin-up and spin-down electron subsystems, respectively. We established that magnetic moments (MMs), band gaps, and carrier mobility can be altered using E(ext). These abilities enable the use of 8-ZGNR/h-BN(0001) semiconductor heterostructure in spintronics. PMID:25005304

  17. Tuning the band structure, magnetic and transport properties of the zigzag graphene nanoribbons/hexagonal boron nitride heterostructures by transverse electric field

    Energy Technology Data Exchange (ETDEWEB)

    Ilyasov, V. V., E-mail: viily@mail.ru, E-mail: chuongnguyen11@gmail.com; Meshi, B. C.; Nguyen, V. C., E-mail: viily@mail.ru, E-mail: chuongnguyen11@gmail.com; Ershov, I. V. [Department of Physics, Don State Technical University, 1 Gagarin Sq, 344000 Rostov on Don (Russian Federation); Nguyen, D. C. [Department of Electronic Materials, School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Rd, 10000 Hanoi (Viet Nam)

    2014-07-07

    The paper presents the results of ab initio study of the opportunities for tuning the band structure, magnetic and transport properties of zigzag graphene nanoribbon (8-ZGNR) on hexagonal boron nitride (h-BN(0001)) semiconductor heterostructure by transverse electric field (E{sub ext}). This study was performed within the framework of the density functional theory (DFT) using Grimme's (DFT-D2) scheme. We established the critical values of E{sub ext} for the 8-ZGNR/h-BN(0001) heterostructure, thereby providing for semiconductor-halfmetal transition in one of electron spin configurations. This study also showed that the degeneration in energy of the localized edge states is removed when E{sub ext} is applied. In ZGNR/h-BN (0001) heterostructure, value of the splitting energy was higher than one in ZGNRs without substrate. We determined the effect of low E{sub ext} applied to the 8-ZGNR/h-BN (0001) semiconductor heterostructure on the preserved local magnetic moment (LMM) (0.3μ{sub B}) of edge carbon atoms. The transport properties of the 8-ZGNR/h-BN(0001) semiconductor heterostructure can be controlled using E{sub ext}. In particular, at a critical value of the positive potential, the electron mobility can increase to 7× 10{sup 5} cm{sup 2}/V s or remain at zero in the spin-up and spin-down electron subsystems, respectively. We established that magnetic moments (MMs), band gaps, and carrier mobility can be altered using E{sub ext}. These abilities enable the use of 8-ZGNR/h-BN(0001) semiconductor heterostructure in spintronics.

  18. Edge and substrate-induced bandgap in zigzag graphene nanoribbons on the hexagonal nitride boron 8-ZGNR/h-BN(0001

    Directory of Open Access Journals (Sweden)

    V. V. Ilyasov

    2013-09-01

    Full Text Available The results of DFT (GGA-PBEsol and DFT(PBE-D2 study of the band structure of zigzag graphene nanoribbons on hexagonal nitride boron 8-ZGNR/h-BN(0001 are presented, suitable as potential base for new materials for spintronics. It offers a study of regularities in the changes of the valence band electron structure and the induction of the energy gap in the series 8-ZGNR → 8-ZGNR/h-BN(0001 → graphene/h-BN(0001. The peculiarities of the spin state at the Fermi level, the roles of the edge effect and the effect of substrate in formation of the band gap in 8-ZGNR/h-BN(0001 system are discussed. Our calculations shown that vdW-correction plays an important role in the adsorption of GNR on h-BN and results in reduction of the interplanar distances in equilibrium systems ZGNRs/h-BN(0001. As a result of the structural changes we have obtained new values of the energy gap in the 8-ZGNR-AF and 8-ZGNR-AF/h-BN(0001 systems. The paper demonstrates appearance of 600 meV energy gap in the 8-ZGNR/h-BN(0001 interface. The contributions of nanoribbon edges and the substrate in formation of the gap have been differentiated for the first time. The estimations of local magnetic moments on carbon atoms are made. Shown that in case of ferromagnetic ordering substrate presense causes insignificant splitting of the bands. The splitting reached only (14-28 meV. Since the electronic states of a suspended GNR in point (k=π are degenerate near the Fermi level, we can assume that the above splitting in 8-ZGNR/h-BN(0001 is only determined by the contribution of the h-BN(0001 substrate.

  19. Structural and electronic properties of multilayer graphene on monolayer hexagonal boron nitride/nickel (111) interface system: A van der Waals density functional study

    Science.gov (United States)

    Yelgel, Celal

    2016-02-01

    The structural and electronic properties of multilayer graphene adsorbed on monolayer hexagonal boron nitride (h-BN)/Ni(111) interface system are investigated using the density functional theory with a recently developed non-local van der Waals density functional (rvv10). The most energetically favourable configuration for a monolayer h-BN/Ni(111) interface is found to be N atom atop the Ni atoms and B atom in fcc site with the interlayer distance of 2.04 Å and adsorption energy of 302 meV/BN. Our results show that increasing graphene layers on a monolayer h-BN/Ni(111) interface leads to a weakening of the interfacial interaction between the monolayer h-BN and Ni(111) surface. The adsorption energy of graphene layers on the h-BN/Ni(111) interface is found to be in the range of the 50-120 meV/C atom as the vertical distance from h-BN to the bottommost graphene layers decreases. With the adsorption of a multilayer graphene on the monolayer h-BN/Ni(111) interface system, the band gap of 0.12 eV and 0.25 eV opening in monolayer graphene and bilayer graphene near the K point is found with an upward shifting of the Fermi level. However, a stacking-sensitive band gap is opened in trilayer graphene. We obtain the band gap of 0.35 eV close to the K point with forming a Mexican hat band structure for ABC-stacked trilayer graphene.

  20. Phonon transport in single-layer Boron nanoribbons

    CERN Document Server

    Zhang, Zhongwei; Peng, Qing; Chen, Yuanping

    2016-01-01

    Inspired by the successful synthesis of several allotropes, boron sheets have been one of the hottest spot areas of focus in various fields. Here, we study phonon transport in three types of boron nanoribbons with zigzag and armchair edges by using a non-equilibrium Green's function combined with first principles methods. Diverse transport properties are found in the nanoribbons. At the room temperature, their highest thermal conductance can be comparable with that of graphene, while the lowest thermal conductance is less than half of graphene's. The three boron sheets exhibit different anisotropic transport characteristics. Two of these sheets have stronger phonon transport abilities along the zigzag edges than the armchair edges, while in the case of the third, the results are reversed. With the analysis of phonon dispersion, bonding charge density, and simplified models of atomic chains, the mechanisms of the diverse phonon properties are discussed. Because all boron allotropes consists of hexagonal and tr...

  1. Manipulation of surface plasmon polariton propagation on isotropic and anisotropic two-dimensional materials coupled to boron nitride heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Inampudi, Sandeep; Nazari, Mina; Forouzmand, Ali; Mosallaei, Hossein, E-mail: hosseinm@coe.neu.edu [Department of Electrical and Computer Engineering, Northeastern University, 360 Huntington Ave., Boston, Massachusetts 02115 (United States)

    2016-01-14

    We present a comprehensive analysis of surface plasmon polariton dispersion characteristics associated with isotropic and anisotropic two-dimensional atomically thin layered materials (2D sheets) coupled to h-BN heterostructures. A scattering matrix based approach is presented to compute the electromagnetic fields and related dispersion characteristics of stacked layered systems composed of anisotropic 2D sheets and uniaxial bulk materials. We analyze specifically the surface plasmon polariton (SPP) dispersion characteristics in case of isolated and coupled two-dimensional layers with isotropic and anisotropic conductivities. An analysis based on residue theorem is utilized to identify optimum optical parameters (surface conductivity) and geometrical parameters (separation between layers) to maximize the SPP field at a given position. The effect of type and degree of anisotropy on the shapes of iso-frequency curves and propagation characteristics is discussed in detail. The analysis presented in this paper gives an insight to identify optimum setup to enhance the SPP field at a given position and in a given direction on the surface of two-dimensional materials.

  2. Manipulation of surface plasmon polariton propagation on isotropic and anisotropic two-dimensional materials coupled to boron nitride heterostructures

    International Nuclear Information System (INIS)

    We present a comprehensive analysis of surface plasmon polariton dispersion characteristics associated with isotropic and anisotropic two-dimensional atomically thin layered materials (2D sheets) coupled to h-BN heterostructures. A scattering matrix based approach is presented to compute the electromagnetic fields and related dispersion characteristics of stacked layered systems composed of anisotropic 2D sheets and uniaxial bulk materials. We analyze specifically the surface plasmon polariton (SPP) dispersion characteristics in case of isolated and coupled two-dimensional layers with isotropic and anisotropic conductivities. An analysis based on residue theorem is utilized to identify optimum optical parameters (surface conductivity) and geometrical parameters (separation between layers) to maximize the SPP field at a given position. The effect of type and degree of anisotropy on the shapes of iso-frequency curves and propagation characteristics is discussed in detail. The analysis presented in this paper gives an insight to identify optimum setup to enhance the SPP field at a given position and in a given direction on the surface of two-dimensional materials

  3. Boronyl as a terminal ligand in boron oxide clusters: hexagonal ring C(2v) B6O4 and ethylene-like D(2h) B6O4(-/2-).

    Science.gov (United States)

    Wang, Wei; Chen, Qiang; Wang, Ying-Jin; Bai, Hui; Gao, Ting-Ting; Li, Hai-Ru; Zhai, Hua-Jin; Li, Si-Dian

    2015-08-14

    Considerable recent research effort has been devoted to the development of boronyl (BO) chemistry. Here we predict three perfectly planar boron boronyl clusters: C2v B6O4 (1, (1)A1), D2h B6O4(−) (2, (2)B3u), and D2h B6O4(2−) (3, (1)Ag). These are established as the global-minimum structures on the basis of the coalescence kick and basin hopping structural searches and electronic structure calculations at the B3LYP/aug-cc-pVTZ level, with complementary CCSD/6-311+G* and single-point CCSD(T)/6-311+G*//B3LYP/aug-cc-pVTZ calculations for 2. The C2v B6O4 neutral cluster features a hexagonal B4O2 ring with two terminal BO groups. The D2h B6O4(−/2−) clusters have ethylene-like structures and are readily formulated as B2(BO)4(−/2−), in which a B2 core with double bond character is bonded to four terminal BO groups. Chemical bonding analyses show that B6O4 (1) possesses an aromatic π bonding system with three delocalized, six-centered π bonds over the hexagonal ring, rendering it an inorganic analogue of benzene, whereas the B6O4(−/2−) (2 and 3) species closely resemble ethylene in terms of structures and bonding. This work provides new examples for the analogy between boron oxides and hydrocarbons. PMID:26166194

  4. Shock wave compression of hexagonal-close-packed metal single crystals: Time-dependent, anisotropic elastic-plastic response of beryllium

    Science.gov (United States)

    Winey, J. M.; Gupta, Y. M.

    2014-07-01

    Understanding and modeling the response of hcp metals to high stress impulsive loading is challenging because the lower crystal symmetry, compared to cubic metals, results in a significantly more complex material response. To gain insight into the inelastic deformation of hcp metals subjected to high dynamic stresses, shock wave compression of single crystals provides a useful approach because different inelastic deformation mechanisms can be examined selectively by shock compression along different crystal orientations. As a representative example, we report, here, on wave propagation simulations for beryllium (Be) single crystals shocked along the c-axis, a-axis, and several low-symmetry directions to peak stresses reaching 7 GPa. The simulations utilized a time-dependent, anisotropic material model that incorporated dislocation dynamics, deformation twinning, and shear cracking based descriptions of inelastic deformation. The simulation results showed good overall agreement with measured wave profiles for all the different crystal orientations examined [Pope and Johnson, J. Appl. Phys. 46, 720 (1975)], including features arising from wave mode coupling due to the highly anisotropic inelastic response of Be. This good agreement demonstrates that the measured profiles can be understood in terms of dislocation slip along basal, prismatic, and pyramidal planes, together with deformation twinning along { 10 1 ¯ 2 } planes. Our results show that the response of shocked Be single crystals involves the simultaneous operation of multiple, distinct inelastic deformation mechanisms for all orientations except the c-axis. For shocked c-axis Be, the measured wave profiles do not provide good discrimination between pyramidal slip and other inelastic deformation mechanisms, such as shear cracking. The findings presented here provide insight into the complex inelastic deformation response of shocked Be single crystals and are expected to be useful for other hcp crystals. More

  5. Shock wave compression of hexagonal-close-packed metal single crystals: Time-dependent, anisotropic elastic-plastic response of beryllium

    International Nuclear Information System (INIS)

    Understanding and modeling the response of hcp metals to high stress impulsive loading is challenging because the lower crystal symmetry, compared to cubic metals, results in a significantly more complex material response. To gain insight into the inelastic deformation of hcp metals subjected to high dynamic stresses, shock wave compression of single crystals provides a useful approach because different inelastic deformation mechanisms can be examined selectively by shock compression along different crystal orientations. As a representative example, we report, here, on wave propagation simulations for beryllium (Be) single crystals shocked along the c-axis, a-axis, and several low-symmetry directions to peak stresses reaching 7 GPa. The simulations utilized a time-dependent, anisotropic material model that incorporated dislocation dynamics, deformation twinning, and shear cracking based descriptions of inelastic deformation. The simulation results showed good overall agreement with measured wave profiles for all the different crystal orientations examined [Pope and Johnson, J. Appl. Phys. 46, 720 (1975)], including features arising from wave mode coupling due to the highly anisotropic inelastic response of Be. This good agreement demonstrates that the measured profiles can be understood in terms of dislocation slip along basal, prismatic, and pyramidal planes, together with deformation twinning along (101¯2) planes. Our results show that the response of shocked Be single crystals involves the simultaneous operation of multiple, distinct inelastic deformation mechanisms for all orientations except the c-axis. For shocked c-axis Be, the measured wave profiles do not provide good discrimination between pyramidal slip and other inelastic deformation mechanisms, such as shear cracking. The findings presented here provide insight into the complex inelastic deformation response of shocked Be single crystals and are expected to be useful for other hcp crystals. More

  6. Hexagonal absorption cask for nuclear power

    International Nuclear Information System (INIS)

    A hexagonal absorption cask for compact spent fuel storage is designed. The cask is made of austenitic stainless steel with a high boron content. One of the two sides of each of the six wall plates is longitudinally chamfered and attached to the inner face of the next wall plate in the hexagonal arrangement. The whole is welded together. This design secures that the absorption of the neutron flux in the radial direction will not be deteriorated if the boron content of the weld metal is reduced. (Z.S.). 2 figs

  7. Boron nitride composites

    Energy Technology Data Exchange (ETDEWEB)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  8. Computational Evidence for the Smallest Boron Nanotube

    Institute of Scientific and Technical Information of China (English)

    Xian Jie LIN; Dong Ju ZHANG; Cheng Bu LIU

    2006-01-01

    The structure of boron nanotubes (BNTs) was found not to be limited to hexagonal pyramidal structures. Based on density functional theory calculations we provided evidence for the smallest boron nanotube, a geometrical analog of the corresponding carbon nanotube. As shown by our calculations, the smallest BNT possesses highly structural, dynamical, and thermal stability, which should be interest for attempts at its synthesis.

  9. Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

    Science.gov (United States)

    Schubert, M.; Rheinländer, B.; Franke, E.; Neumann, H.; Tiwald, T. E.; Woollam, J. A.; Hahn, J.; Richter, F.

    1997-11-01

    We present a microstructure-dependent anisotropic infrared-optical dielectric function model for mixed-phase polycrystalline material from which we derive the transverse and longitudinal-optical modes observable in thin films. Infrared ellipsometry over the wavelength range from 700 to 3000 cm-1 is then used to determine the phase and microstructure of polycrystalline and multilayered hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The ellipsometric data depend on the thin-film multilayer structure, the layer-phase composition, and the average orientation of the hexagonal grain c axes. In particular, we demonstrate the existence of spectral shifts of longitudinal optical phonons as a function of microstructure, i.e., the average grain crystallographic orientation within the mixed-phase material.

  10. Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

    International Nuclear Information System (INIS)

    We present a microstructure-dependent anisotropic infrared-optical dielectric function model for mixed-phase polycrystalline material from which we derive the transverse and longitudinal-optical modes observable in thin films. Infrared ellipsometry over the wavelength range from 700 to 3000cm-1 is then used to determine the phase and microstructure of polycrystalline and multilayered hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The ellipsometric data depend on the thin-film multilayer structure, the layer-phase composition, and the average orientation of the hexagonal grain c axes. In particular, we demonstrate the existence of spectral shifts of longitudinal optical phonons as a function of microstructure, i.e., the average grain crystallographic orientation within the mixed-phase material. copyright 1997 The American Physical Society

  11. Hexagons of the Heart

    Science.gov (United States)

    Burkhauser, Beth; Porter, Dave

    2010-01-01

    This article discusses the international interdependence Hexagon Project for Haiti which invites students, ages five through eighteen, to create an image within a hexagonal template and respond to big questions surrounding a global culture of interdependence. The hexagon is a visual metaphor for interdependence, with its potential to infinitely…

  12. Scanning tunneling microscopy study of in-plane graphene-hexagonal boron nitride heterostructures%石墨烯-六方氮化硼面内异质结构的扫描隧道显微学研究

    Institute of Scientific and Technical Information of China (English)

    刘梦溪; 张艳锋; 刘忠范

    2015-01-01

    石墨烯-六方氮化硼面内异质结构因可调控石墨烯的能带结构而受到广泛关注。本文介绍了在超高真空体系内,利用两步生长法在两类对石墨烯分别有强和弱电子掺杂的基底,即Rh(111)和Ir(111)上制备石墨烯-六方氮化硼单原子层异质结构。通过扫描隧道显微镜及扫描隧道谱对这两种材料的形貌和电子结构进行研究发现:石墨烯和六方氮化硼倾向于拼接生长形成单层的异质结构,而非形成各自分立的畴区;在拼接边界处,石墨烯和六方氮化硼原子结构连续无缺陷;拼接边界多为锯齿形型,该实验结果与密度泛函理论计算结果相符合;拼接界面处的石墨烯和六方氮化硼分别具有各自本征的电子结构,六方氮化硼对石墨烯未产生电子掺杂效应。%In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a research focus of graphene due to its predicted fascinating properties such as bandgap opening and magnetism, which hence has ignited the attempt of experimentally growing such in-plane two-dimensional (2D) hybrid materials. Many previous researches demonstrated the synthesis of such heterostructures on Cu foils via chemical vapor deposition (CVD) process. The obtained 2D hybrid materials would offer a possibility for fabricating atomically thin electronic devices. However, many fundamental issues are still unclear, including the in-plane atomic continuity, the edge type, and the electronic properties at the boundary of hybridized h-BN and graphene domain. To clarify these issues, we report the syntheses of h-BN-G monolayer heterostructures on strongly coupled Rh(111) substrate and weakly coupled Ir(111) substrate via a two-step growth process in an ultrahigh vacuum (UHV) system, respectively. With the aid of scanning tunneling microscopy (STM), it is revealed that graphene and h-BN could be linked together seamlessly on an atomic scale at the

  13. Direct chemical conversion of graphene to boron- and nitrogen- and carbon-containing atomic layers

    Science.gov (United States)

    Gong, Yongji; Shi, Gang; Zhang, Zhuhua; Zhou, Wu; Jung, Jeil; Gao, Weilu; Ma, Lulu; Yang, Yang; Yang, Shubin; You, Ge; Vajtai, Robert; Xu, Qianfan; MacDonald, Allan H.; Yakobson, Boris I.; Lou, Jun; Liu, Zheng; Ajayan, Pulickel M.

    2014-01-01

    Graphene and hexagonal boron nitride are typical conductor and insulator, respectively, while their hybrids hexagonal boron carbonitride are promising as a semiconductor. Here we demonstrate a direct chemical conversion reaction, which systematically converts the hexagonal carbon lattice of graphene to boron nitride, making it possible to produce uniform boron nitride and boron carbonitride structures without disrupting the structural integrity of the original graphene templates. We synthesize high-quality atomic layer films with boron-, nitrogen- and carbon-containing atomic layers with full range of compositions. Using this approach, the electrical resistance, carrier mobilities and bandgaps of these atomic layers can be tuned from conductor to semiconductor to insulator. Combining this technique with lithography, local conversion could be realized at the nanometre scale, enabling the fabrication of in-plane atomic layer structures consisting of graphene, boron nitride and boron carbonitride. This is a step towards scalable synthesis of atomically thin two-dimensional integrated circuits.

  14. Innovative boron nitride-doped propellants

    OpenAIRE

    Thelma Manning; Richard Field; Kenneth Klingaman; Michael Fair; John Bolognini; Robin Crownover; Carlton P. Adam; Viral Panchal; Eugene Rozumov; Henry Grau; Paul Matter; Michael Beachy; Christopher Holt; Samuel Sopok

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower ...

  15. Matchings in hexagonal cacti

    Directory of Open Access Journals (Sweden)

    E. J. Farrell

    1987-06-01

    Full Text Available Explicit recurrences are derived for the matching polynomials of the basic types of hexagonal cacti, the linear cactus and the star cactus and also for an associated graph, called the hexagonal crown. Tables of the polynomials are given for each type of graph. Explicit formulae are then obtained for the number of defect-d matchings in the graphs, for various values of d. In particular, formulae are derived for the number of perfect matchings in all three types of graphs. Finally, results are given for the total number of matchings in the graphs.

  16. Counting Hexagonal Lattice Animals

    OpenAIRE

    Mohammed, Mohamud

    2002-01-01

    We describe Maple packages for the automatic generation of generating functions(and series expansions) for counting lattice animals(fixed polyominoes), in the two-dimensional hexagonal lattice, of bounded but arbitrary width. Our Maple packages(complete with source code) are easy-to-use and available from my website.

  17. Amorphous boron nitride at high pressure

    Science.gov (United States)

    Durandurdu, Murat

    2016-06-01

    The pressure-induced phase transformation in hexagonal boron nitrite and amorphous boron nitrite is studied using ab initio molecular dynamics simulations. The hexagonal-to-wurtzite phase transformation is successfully reproduced in the simulation with a transformation mechanism similar to one suggested in experiment. Amorphous boron nitrite, on the other hand, gradually transforms to a high-density amorphous phase with the application of pressure. This phase transformation is irreversible because a densified amorphous state having both sp3 and sp2 bonds is recovered upon pressure release. The high-density amorphous state mainly consists of sp3 bonds and its local structure is quite similar to recently proposed intermediate boron nitrite phases, in particular tetragonal structure (P42/mnm), rather than the known the wurtzite or cubic boron nitrite due to the existence of four membered rings and edge sharing connectivity. On the basis of this finding we propose that amorphous boron nitrite might be best candidate as a starting structure to synthesize the intermediate phase(s) at high pressure and temperature (probably below 800 °C) conditions.

  18. Electroextraction of boron from boron carbide scrap

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Ashish [Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Anthonysamy, S., E-mail: sas@igcar.gov.in [Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Ghosh, C. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Ravindran, T.R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Divakar, R.; Mohandas, E. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India)

    2013-10-15

    Studies were carried out to extract elemental boron from boron carbide scrap. The physicochemical nature of boron obtained through this process was examined by characterizing its chemical purity, specific surface area, size distribution of particles and X-ray crystallite size. The microstructural characteristics of the extracted boron powder were analyzed by using scanning electron microscopy and transmission electron microscopy. Raman spectroscopic examination of boron powder was also carried out to determine its crystalline form. Oxygen and carbon were found to be the major impurities in boron. Boron powder of purity ∼ 92 wt. % could be produced by the electroextraction process developed in this study. Optimized method could be used for the recovery of enriched boron ({sup 10}B > 20 at. %) from boron carbide scrap generated during the production of boron carbide. - Highlights: • Recovery of {sup 10}B from nuclear grade boron carbide scrap • Development of process flow sheet • Physicochemical characterization of electroextracted boron • Microscopic examination of electroextracted boron.

  19. Electroextraction of boron from boron carbide scrap

    International Nuclear Information System (INIS)

    Studies were carried out to extract elemental boron from boron carbide scrap. The physicochemical nature of boron obtained through this process was examined by characterizing its chemical purity, specific surface area, size distribution of particles and X-ray crystallite size. The microstructural characteristics of the extracted boron powder were analyzed by using scanning electron microscopy and transmission electron microscopy. Raman spectroscopic examination of boron powder was also carried out to determine its crystalline form. Oxygen and carbon were found to be the major impurities in boron. Boron powder of purity ∼ 92 wt. % could be produced by the electroextraction process developed in this study. Optimized method could be used for the recovery of enriched boron (10B > 20 at. %) from boron carbide scrap generated during the production of boron carbide. - Highlights: • Recovery of 10B from nuclear grade boron carbide scrap • Development of process flow sheet • Physicochemical characterization of electroextracted boron • Microscopic examination of electroextracted boron

  20. Hexagonal OsB2: Sintering, microstructure and mechanical properties

    International Nuclear Information System (INIS)

    Highlights: • ReB2-type hexagonal OsB2 powder has been densified by spark plasma sintering. • The sintered OsB2 contains ∼80 wt.% hexagonal and ∼20 wt.% orthorhombic phases. • The average grain size of the sintered OsB2 sample was 0.56 ± 0.26 μm. • H = 31 ± 9 GPa and E = 574 ± 112 GPa measured by nanoindentation. - Abstract: The metastable high pressure ReB2-type hexagonal OsB2 bulk ceramics was produced by spark plasma sintering. The phase composition, microstructure, and mechanical behavior of the sintered OsB2 were studied by X-ray diffraction, optical microscopy, TEM, SEM, EDS, and nanoindentation. The produced ceramics was rather porous and contained a mixture of hexagonal (∼80 wt.%) and orthorhombic (∼20 wt.%) phases as identified by X-ray diffraction and EBSD analysis. Two boron-rich phases, which do not contain Os, were also identified by TEM and SEM/EDS analysis. Nanoindentation measurements yielded a hardness of 31 ± 9 GPa and Young’s modulus of 574 ± 112 GPa, indicating that the material is rather hard and very stiff; however, it is very prone to crack formation and propagation, which is indicative of a very brittle nature of this material. Improvements in the sintering regime are required in order to produce dense, homogeneous and single phase hexagonal OsB2 bulk ceramics

  1. Friction anisotropy in boronated graphite

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, N., E-mail: niranjan@igcar.gov.in [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Radhika, R. [Crystal Growth Centre, Anna University, Chennai (India); Kozakov, A.T. [Research Institute of Physics, Southern Federal University, Rostov-on-Don (Russian Federation); Pandian, R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Chakravarty, S. [UGC-DAE CSR, Kalpakkam (India); Ravindran, T.R.; Dash, S.; Tyagi, A.K. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)

    2015-01-01

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient.

  2. Friction anisotropy in boronated graphite

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient

  3. Effect of boron concentration on physicochemical properties of boron-doped carbon nanotubes

    International Nuclear Information System (INIS)

    Boron-doped carbon nanotubes (B-CNTs) were synthesized using chemical vapour deposition (CVD) floating catalyst method. Toluene was used as the carbon source, triphenylborane as boron as well as the carbon source while ferrocene was used as the catalyst. The amount of triphenylborane used was varied in a solution of toluene and ferrocene. Ferrocene was kept constant at 2.5 wt.%. while a maximum temperature of 900 °C was used for the synthesis of the shaped carbon nanomaterial (SCNMs). SCNMs obtained were characterized by the use of transmission electron microscope (TEM), scanning electron microscope (SEM), high resolution-electron microscope, electron dispersive X-ay spectroscopy (EDX), Raman spectroscopy, inductively coupled plasma-optical emission spectroscopy (ICP-OES), vibrating sample magnetometer (VSM), nitrogen adsorption at 77 K, and inverse gas chromatography. TEM and SEM analysis confirmed SCNMs obtained were a mixture of B-CNTs and carbon nanofibres (B-CNF). EDX and ICP-OES results showed that boron was successively incorporated into the carbon hexagonal network of CNTs and its concentration was dependent on the amount of triphenylborane used. From the VSM results, the boron doping within the CNTs introduced ferromagnetic properties, and as the percentage of boron increased the magnetic coactivity and squareness changed. In addition, boron doping changed the conductivity and the surface energy among other physicochemical properties of B-CNTs. - Highlights: • Boron-doping of carbon nanotubes (CNTs) changes their physiochemical properties. • Amount of boron-doping was dependent on the wt.% of boron precursor used. • Boron-doping changed CNTs surfaces and the distribution of dispersive energy sites. • Boron-doping affected the conductivity and ferromagnetic properties. • Increased boron-doping results in a more favourable interaction with polar probes

  4. Research of nanocomposite structure of boron nitride at proton radiation

    OpenAIRE

    Borodin, Yuri Viktorovich; Ermolaev, D. S.; Pak, V.; Zhang, K.

    2016-01-01

    Using roentgen diffraction and electron microscopy, the influence of nanosecond irradiation by ion beams of high energy on forming of self-organized nanoblocks in near surface's layers of boron nitride (BN) has been studied. It was shown that low temperature transitions from hexagonal to wrutz boron nitrides is associated with changes of shape and sizes of self-organized particles consisting the nanoblocks. We have calculated the parameters of nanoblocks using the meanings of interplane dista...

  5. Discovery of Superconductivity in Hard Hexagonal ε-NbN

    Science.gov (United States)

    Zou, Yongtao; Qi, Xintong; Zhang, Cheng; Ma, Shuailing; Zhang, Wei; Li, Ying; Chen, Ting; Wang, Xuebing; Chen, Zhiqiang; Welch, David; Zhu, Pinwen; Liu, Bingbing; Li, Qiang; Cui, Tian; Li, Baosheng

    2016-02-01

    Since the discovery of superconductivity in boron-doped diamond with a critical temperature (TC) near 4 K, great interest has been attracted in hard superconductors such as transition-metal nitrides and carbides. Here we report the new discovery of superconductivity in polycrystalline hexagonal ε-NbN synthesized at high pressure and high temperature. Direct magnetization and electrical resistivity measurements demonstrate that the superconductivity in bulk polycrystalline hexagonal ε-NbN is below ∼11.6 K, which is significantly higher than that for boron-doped diamond. The nature of superconductivity in hexagonal ε-NbN and the physical mechanism for the relatively lower TC have been addressed by the weaker bonding in the Nb-N network, the co-planarity of Nb-N layer as well as its relatively weaker electron-phonon coupling, as compared with the cubic δ-NbN counterpart. Moreover, the newly discovered ε-NbN superconductor remains stable at pressures up to ∼20 GPa and is significantly harder than cubic δ-NbN it is as hard as sapphire, ultra-incompressible and has a high shear rigidity of 201 GPa to rival hard/superhard material γ-B (∼227 GPa). This exploration opens a new class of highly desirable materials combining the outstanding mechanical/elastic properties with superconductivity, which may be particularly attractive for its technological and engineering applications in extreme environments.

  6. Discovery of Superconductivity in Hard Hexagonal ε-NbN.

    Science.gov (United States)

    Zou, Yongtao; Qi, Xintong; Zhang, Cheng; Ma, Shuailing; Zhang, Wei; Li, Ying; Chen, Ting; Wang, Xuebing; Chen, Zhiqiang; Welch, David; Zhu, Pinwen; Liu, Bingbing; Li, Qiang; Cui, Tian; Li, Baosheng

    2016-01-01

    Since the discovery of superconductivity in boron-doped diamond with a critical temperature (TC) near 4 K, great interest has been attracted in hard superconductors such as transition-metal nitrides and carbides. Here we report the new discovery of superconductivity in polycrystalline hexagonal ε-NbN synthesized at high pressure and high temperature. Direct magnetization and electrical resistivity measurements demonstrate that the superconductivity in bulk polycrystalline hexagonal ε-NbN is below ∼11.6 K, which is significantly higher than that for boron-doped diamond. The nature of superconductivity in hexagonal ε-NbN and the physical mechanism for the relatively lower TC have been addressed by the weaker bonding in the Nb-N network, the co-planarity of Nb-N layer as well as its relatively weaker electron-phonon coupling, as compared with the cubic δ-NbN counterpart. Moreover, the newly discovered ε-NbN superconductor remains stable at pressures up to ∼20 GPa and is significantly harder than cubic δ-NbN; it is as hard as sapphire, ultra-incompressible and has a high shear rigidity of 201 GPa to rival hard/superhard material γ-B (∼227 GPa). This exploration opens a new class of highly desirable materials combining the outstanding mechanical/elastic properties with superconductivity, which may be particularly attractive for its technological and engineering applications in extreme environments. PMID:26923318

  7. Obtuse triangle suppression in anisotropic meshes

    KAUST Repository

    Sun, Feng

    2011-12-01

    Anisotropic triangle meshes are used for efficient approximation of surfaces and flow data in finite element analysis, and in these applications it is desirable to have as few obtuse triangles as possible to reduce the discretization error. We present a variational approach to suppressing obtuse triangles in anisotropic meshes. Specifically, we introduce a hexagonal Minkowski metric, which is sensitive to triangle orientation, to give a new formulation of the centroidal Voronoi tessellation (CVT) method. Furthermore, we prove several relevant properties of the CVT method with the newly introduced metric. Experiments show that our algorithm produces anisotropic meshes with much fewer obtuse triangles than using existing methods while maintaining mesh anisotropy. © 2011 Elsevier B.V. All rights reserved.

  8. The different adsorption mechanism of methane molecule onto a boron nitride and a graphene flakes

    Energy Technology Data Exchange (ETDEWEB)

    Seyed-Talebi, Seyedeh Mozhgan [Shahid Chamran University, Golestan boulevard, Ahvaz, Khouzestan (Iran, Islamic Republic of); Neek-Amal, M., E-mail: neekamal@srttu.edu [Shahid Rajaee Teacher Training University, Lavizan, Tehran (Iran, Islamic Republic of)

    2014-10-21

    Graphene and single layer hexagonal boron-nitride are two newly discovered 2D materials with wonderful physical properties. Using density functional theory, we study the adsorption mechanism of a methane molecule over a hexagonal flake of single layer hexagonal boron-nitride (h-BN) and compare the results with those of graphene. We found that independent of the used functional in our ab-initio calculations, the adsorption energy in the h-BN flake is larger than that for graphene. Despite of the adsorption energy profile of methane over a graphene flake, we show that there is a long range behavior beyond minimum energy in the adsorption energy of methane over h-BN flake. This result reveals the higher sensitivity of h-BN sheet to the adsorption of a typical closed shell molecule with respect to graphene. The latter gives insight in the recent experiments of graphene over hexagonal boron nitride.

  9. Determination of boron content in boron carbide, boron nitride and amorphous boron

    International Nuclear Information System (INIS)

    In the present article an analyzing method of determination of boron content in boron carbide, boron nitride and amorphous boron described. Examined samples were digested with potassium hydroxide and potassium nitrate in nickel crucible and the boron contents determined subsequently by an alcalimetric titration of boric acid in presence of mannite resp. sorbite. (author)

  10. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  11. Innovative boron nitride-doped propellants

    Institute of Scientific and Technical Information of China (English)

    Thelma MANNING; Henry GRAU; Paul MATTER; Michael BEACHY; Christopher HOLT; Samuel SOPOK; Richard FIELD; Kenneth KLINGAMAN; Michael FAIR; John BOLOGNINI; Robin CROWNOVER; Carlton P. ADAM; Viral PANCHAL; Eugene ROZUMOV

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  12. An Explanation for Saturn's Hexagon

    Science.gov (United States)

    Kohler, Susanna

    2015-08-01

    For over three decades, weve been gathering observations of the mysterious hexagonal cloud pattern encircling Saturns north pole. Now, researchers believe they have a model that can better explain its formation.Fascinating GeometrySaturns northern Hexagon is a cloud band circling Saturns north pole at 78 N, first observed by the Voyager flybys in 198081. This remarkable pattern has now persisted for more than a Saturn year (29.5 Earth years).Eight frames demonstrating the motion within Saturns Hexagon. Click to watch the animation! The view is from a reference frame rotating with Saturn. [NASA/JPL-Caltech/SSI/Hampton University]Observations by Voyager and, more recently, Cassini have helped to identify many key characteristics of this bizarre structure. Two interesting things weve learned are:The Hexagon is associated with an eastward zonal jet moving at more than 200 mph.The cause of the Hexagon is believed to be a jet stream, similar to the ones that we experience on Earth. The path of the jet itself appears to follow the hexagons outline.The Hexagon rotates at roughly the same rate as Saturns overall rotation.While we observe individual storms and cloud patterns moving at different speeds within the Hexagon, the vertices of the Hexagon move at almost exactly the same rotational speed as that of Saturn itself.Attempts to model the formation of the Hexagon with a jet stream have yet to fully reproduce all of the observed features and behavior. But now, a team led by Ral Morales-Juberas of the New Mexico Institute of Mining and Technology believes they have created a model that better matches what we see.Simulating a Meandering JetThe team ran a series of simulations of an eastward, Gaussian-profile jet around Saturns pole. They introduced small perturbations to the jet and demonstrated that, as a result of the perturbations, the jet can meander into a hexagonal shape. With the initial conditions of the teams model, the meandering jet is able to settle into a

  13. Elementary boron and metal-boron compounds

    International Nuclear Information System (INIS)

    Elementary boron is of interest for its peculiar and difficult bonding behaviour in solids. Due to its high oxygen affinity we find no elementary boron in nature. For the same reason it is difficult to isolate pure, elementary boron, and much confusion about 'boron crystals' has been the result of more than 100 years of research. The polymorphic forms of elementary boron and its closely related higher carbides and higher metal borides as well as the simple metal borides, B3C and BN are reported. The quantum-mechanical background responsible for structure and stoichiometry of these crystals is given. (orig.)

  14. Predicted phase diagram of boron-carbon-nitrogen

    Science.gov (United States)

    Zhang, Hantao; Yao, Sanxi; Widom, Michael

    2016-04-01

    Noting the structural relationships between phases of carbon and boron carbide with phases of boron nitride and boron subnitride, we investigate their mutual solubilities using a combination of first-principles total energies supplemented with statistical mechanics to address finite temperatures. Thus we predict the solid-state phase diagram of boron-carbon-nitrogen (B-C-N). Owing to the large energy costs of substitution, we find that the mutual solubilities of the ultrahard materials diamond and cubic boron nitride are negligible, and the same for the quasi-two-dimensional materials graphite and hexagonal boron nitride. In contrast, we find a continuous range of solubility connecting boron carbide to boron subnitride at elevated temperatures. An electron-precise ternary compound B13CN consisting of B12 icosahedra with NBC chains is found to be stable at all temperatures up to melting. It exhibits an order-disorder transition in the orientation of NBC chains at approximately T =500 K. We also propose that the recently discovered binary B13N2 actually has composition B12.67N2 .

  15. HEXCOH: A programme for computing coherent elastic scatter from hexagonal polycrystals

    International Nuclear Information System (INIS)

    HEXCOH is a computer code written in FORTRAN II for the KDF 9 computer to evaluate the isotropic and linearly anisotropic coherent elastic neutron cross sections in an isotropic polycrystalline solid with a close packed hexagonal lattice structure. The code can only be used at present for graphite, beryllium and beryllium oxide but may be easily extended to include other solids with hexagonal lattices. The cross sections can be computed as averaged values over a weighting spectrum and between energy boundaries specified in the input, or as point values. (author)

  16. Microplasma Processed Ultrathin Boron Nitride Nanosheets for Polymer Nanocomposites with Enhanced Thermal Transport Performance.

    Science.gov (United States)

    Zhang, Ri-Chao; Sun, Dan; Lu, Ai; Askari, Sadegh; Macias-Montero, Manuel; Joseph, Paul; Dixon, Dorian; Ostrikov, Kostya; Maguire, Paul; Mariotti, Davide

    2016-06-01

    This Research Article reports on the enhancement of the thermal transport properties of nanocomposite materials containing hexagonal boron nitride in poly(vinyl alcohol) through room-temperature atmospheric pressure direct-current microplasma processing. Results show that the microplasma treatment leads to exfoliation of the hexagonal boron nitride in isopropyl alcohol, reducing the number of stacks from >30 to a few or single layers. The thermal diffusivity of the resulting nanocomposites reaches 8.5 mm(2) s(-1), 50 times greater than blank poly(vinyl alcohol) and twice that of nanocomposites containing nonplasma treated boron nitride nanosheets. From TEM analysis, we observe much less aggregation of the nanosheets after plasma processing along with indications of an amorphous carbon interfacial layer, which may contribute to stable dispersion of boron nitride nanosheets in the resulting plasma treated colloids. PMID:27153343

  17. Graphene quantum dot on boron nitride: Dirac cone replica and Hofstadter butterfly

    OpenAIRE

    Chizhova, L. A.; Libisch, F.; Burgdörfer, J.

    2014-01-01

    Graphene flakes placed on hexagonal boron nitride feature in the presence of a magnetic field a complex electronic structure due to a hexagonal moir\\'e potential resulting from the van der Waals interaction with the substrate. The slight lattice mismatch gives rise to a periodic supercell potential. Zone folding is expected to create replica of the original Dirac cone and Hofstadter butterflies. Our large-scale tight binding simulation reveals an unexpected coexistence of a relativistic and n...

  18. Boron nitride nanomaterials for thermal management applications.

    Science.gov (United States)

    Meziani, Mohammed J; Song, Wei-Li; Wang, Ping; Lu, Fushen; Hou, Zhiling; Anderson, Ankoma; Maimaiti, Halidan; Sun, Ya-Ping

    2015-05-18

    Hexagonal boron nitride nanosheets (BNNs) are analogous to their two-dimensional carbon counterparts in many materials properties, in particular, ultrahigh thermal conductivity, but also offer some unique attributes, including being electrically insulating, high thermal stability, chemical and oxidation resistance, low color, and high mechanical strength. Significant recent advances in the production of BNNs, understanding of their properties, and the development of polymeric nanocomposites with BNNs for thermally conductive yet electrically insulating materials and systems are highlighted herein. Major opportunities and challenges for further studies in this rapidly advancing field are also discussed. PMID:25652360

  19. Anomalous thermal conductivity of monolayer boron nitride

    Science.gov (United States)

    Tabarraei, Alireza; Wang, Xiaonan

    2016-05-01

    In this paper, we use nonequilibrium molecular dynamics modeling to investigate the thermal properties of monolayer hexagonal boron nitride nanoribbons under uniaxial strain along their longitudinal axis. Our simulations predict that hexagonal boron nitride shows an anomalous thermal response to the applied uniaxial strain. Contrary to three dimensional materials, under uniaxial stretching, the thermal conductivity of boron nitride nanoribbons first increases rather than decreasing until it reaches its peak value and then starts decreasing. Under compressive strain, the thermal conductivity of monolayer boron nitride ribbons monolithically reduces rather than increasing. We use phonon spectrum and dispersion curves to investigate the mechanism responsible for the unexpected behavior. Our molecular dynamics modeling and density functional theory results show that application of longitudinal tensile strain leads to the reduction of the group velocities of longitudinal and transverse acoustic modes. Such a phonon softening mechanism acts to reduce the thermal conductivity of the nanoribbons. On the other hand, a significant increase in the group velocity (stiffening) of the flexural acoustic modes is observed, which counteracts the phonon softening effects of the longitudinal and transverse modes. The total thermal conductivity of the ribbons is a result of competition between these two mechanisms. At low tensile strain, the stiffening mechanism overcomes the softening mechanism which leads to an increase in the thermal conductivity. At higher tensile strain, the softening mechanism supersedes the stiffening and the thermal conductivity slightly reduces. Our simulations show that the decrease in the thermal conductivity under compressive strain is attributed to the formation of buckling defects which reduces the phonon mean free path.

  20. A Spring Model for a Cylindrical Interface Layer with Hexagonal SymmetryBetween Two Solids

    Institute of Scientific and Technical Information of China (English)

    LIU Sheng-Xing; WANG Yao-Jun

    2000-01-01

    A unique spring model is established to describe a cylindrical interface layer with hexagonal (or transversely isotropic) symmetry between two solids, which is realized by asymptotically expanding the transfer matrix for the anisotropic layer. The accuracy of the model is evaluated based on a comparison between the exact and the approximate solutions of the scattering cross sections of an obliquely incident ultrasonic wave from an interface layer with different thickness.

  1. Hexagonal green function nodal method

    International Nuclear Information System (INIS)

    Based on the conformal mapping, Green function method was applied in hexagonal geometry. Conformal mapping was used to map a hexagonal node to a rectangular node before transverse integration. Then, the transverse integration equations were resolved using Green function method with the second boundary condition. A three dimensional multi-energy-groups static program NACK was programmed based on those theories. The code was verified by VVER-1000-type core without the reflector, VVER 440-type three-dimensional two-energy-groups core and two-dimensional core with discontinuity factors. The eigenvalue error is less than 50 pcm, and the maximum relative error of the node average power is less than 2%. The accuracy of NACK is as good as that of other advanced node method codes. (authors)

  2. EDGE-ORIENTED HEXAGONAL ELEMENTS

    Institute of Scientific and Technical Information of China (English)

    Chao Yang; Jiachang Sun

    2007-01-01

    In this paper, two new nonconforming hexagonal elements are presented, which are based on the trilinear function space Q(3)1 and are edge-oriented, analogical to the case of the rotated Q1 quadrilateral element. A priori error estimates are given to show that the new elements achieve first-order accuracy in the energy norm and second-order accuracy in the L2 norm. This theoretical result is confirmed by the numerical tests.

  3. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  4. Sputtering behavior of boron and boron carbide

    International Nuclear Information System (INIS)

    Sputtering yields of boron were measured with D+ and B+ ions for normal and oblique angles of incidence. Self-sputtering data of boron carbide were simulated in the experiment by using Ne+ ions. The energies of the impinging ions were between 20 eV and 10 keV. The measured data are compared with computer simulated values calculated with the TRIMSP program. The boron data for normal ion impact are higher than the calculated values, whereas those for oblique ion incidence are smaller than the calculation predicts. This discrepancy is explained by the surface roughness and supported by SEM micrographs. The comparison of the boron carbide data with TRIMSP calculations shows much better agreement than the boron data. In this case the target surface was much smoother. (orig.)

  5. Boron nitride converted carbon fiber

    Energy Technology Data Exchange (ETDEWEB)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  6. Mass spectrometric determination of boron isotope in boron carbide

    International Nuclear Information System (INIS)

    Boron isotopes in boron carbide are measured by thermionic ionization mass spectrometry with no prior chemical separation. Boron is converted to sodium borate by fusion of the boron carbide with sodium hydroxide (or sodium carbonate) directly on the rhenium filament. The boron isotopic ratios are measured by using the Na2BO2+ ion

  7. Anisotropic Stars II Stability

    CERN Document Server

    Dev, K; Dev, Krsna; Gleiser, Marcelo

    2003-01-01

    We investigate the stability of self-gravitating spherically symmetric anisotropic spheres under radial perturbations. We consider both the Newtonian and the full general-relativistic perturbation treatment. In the general-relativistic case, we extend the variational formalism for spheres with isotropic pressure developed by Chandrasekhar. We find that, in general, when the tangential pressure is greater than the radial pressure, the stability of the anisotropic sphere is enhanced when compared to isotropic configurations. In particular, anisotropic spheres are found to be stable for smaller values of the adiabatic index $\\gamma$.

  8. Nitrogen implantation effects on the chemical bonding and hardness of boron and boron nitride coatings

    Energy Technology Data Exchange (ETDEWEB)

    Anders, S; Felter, T; Hayes, J; Jankowski, A F; Patterson, R; Poker, D; Stamler, T

    1999-02-08

    Boron nitride (BN) coatings are deposited by the reactive sputtering of fully dense, boron (B) targets utilizing an argon-nitrogen (Ar-N{sub 2}) reactive gas mixture. Near-edge x-ray absorption fine structure analysis reveals features of chemical bonding in the B 1s photoabsorption spectrum. Hardness is measured at the film surface using nanoindentation. The BN coatings prepared at low, sputter gas pressure with substrate heating are found to have bonding characteristic of a defected hexagonal phase. The coatings are subjected to post-deposition nitrogen (N{sup +} and N{sub 2}{sup +}) implantation at different energies and current densities. The changes in film hardness attributed to the implantation can be correlated to changes observed in the B 1s NEXAFS spectra.

  9. A method to manufacture a core catcher of boron nitride, protecting against melt-through

    International Nuclear Information System (INIS)

    A method to manufacture a protective layer made of boron nitride to be placed under the reactor and collect molten material in case of a meltdown accident. The layer is made from hexagonal boronnitride and is isostatically pressed at a temperature of at least 1600 degrees C and a pressure of at least 50 MPa. (L.E.)

  10. A 3D porous media liver lobule model: the importance of vascular septa and anisotropic permeability for homogeneous perfusion

    OpenAIRE

    Debbaut, Charlotte; Vierendeels, Jan; Siggers, Jennifer H.; Repetto, Rodolfo; Monbaliu, Diethard; Segers, Patrick

    2014-01-01

    The hepatic blood circulation is complex, particularly at the microcirculatory level. Previously, 2D liver lobule models using porous media and a 3D model using real sinusoidal geometries have been developed. We extended these models to investigate the role of vascular septa (VS) and anisotropic permeability. The lobule was modelled as a hexagonal prism (with or without VS) and the tissue was treated as a porous medium (isotropic or anisotropic permeability). Models were solved using computat...

  11. What are the possible moiré patterns of graphene on hexagonally packed surfaces? Universal solution for hexagonal coincidence lattices, derived by a geometric construction

    International Nuclear Information System (INIS)

    We present a systematic investigation of two coinciding lattices and their spatial beating frequencies that lead to the formation of moiré patterns. A mathematical model was developed and applied for the case of a hexagonally arranged adsorbate on a hexagonal support lattice. In particular, it describes the moiré patterns observed for graphene grown on a hexagonally arranged transition metal surface, a system that serves as one of the promising synthesis routes for the formation of this highly wanted material. The presented model uses a geometric construction that derives analytic expressions for first and higher order beating frequencies occurring for arbitrarily oriented graphene on the underlying substrate lattice. By solving the corresponding equations, we predict the size and orientation of the resulting moiré pattern. Adding the constraints for commensurability delivers further solvable analytic equations that predict whether or not first or higher order commensurable phases occur. We explicitly treat the case for first, second and third order commensurable phases. The universality of our approach is tested by comparing our data with moiré patterns that are experimentally observed for graphene on Ir(111) and on Pt(111). Our analysis can be applied for graphene, hexagonal boron nitride (h-BN), or other sp2-networks grown on any hexagonally packed support surface predicting the size, orientation and properties of the resulting moiré patterns. In particular, we can determine which commensurate phases are expected for these systems. The derived information can be used to critically discuss the moiré phases reported in the literature. (paper)

  12. Determination of boron and silicon in boron carbide

    International Nuclear Information System (INIS)

    A sodium carbonate fusion technique for the dissolution of boron carbide followed by the determination of boron by alkalimetric titration and silicon impurity by spectrophotometry is described. The elemental boron content in the commercially available boron carbide ranged from 77.2 to 77.60 % and the silicon in the range 1170 to 2500 ppm. (author)

  13. Structure, stability and defects of single layer hexagonal BN in comparison to graphene

    International Nuclear Information System (INIS)

    We study by molecular dynamics the structural properties of single layer hexagonal boron nitride (h-BN) in comparison to graphene. We show that the Tersoff bond order potential developed for BN by Albe et al (1997 Radiat. Eff. Defects Solids 141 8597) gives a thermally stable hexagonal single layer with a bending constant κ = 0.54 eV at T = 0. We find that the non-monotonic behaviour of the lattice parameter, the expansion of the interatomic distance and the growth of the bending rigidity with temperature are qualitatively similar to those of graphene. Conversely, the energetics of point defects is extremely different: instead of StoneWales defects, the two lowest energy defects in h-BN involve either a broken bond or an out-of-plane displacement of a N atom to form a tetrahedron with three B atoms in the plane. We provide the formation energies and an estimate of the energy barriers.

  14. Two-dimensional boron based nanomaterials: electronic, vibrational, Raman, and STM signatures

    Science.gov (United States)

    Massote, Daniel V. P.; Liang, Liangbo; Kharche, Neerav; Meunier, Vincent

    Because boron has only three electrons on its outer shell, planar mono-elemental boron nanostructures are expected to be much more challenging to assemble than their carbon counterparts. Several studies proposed schemes in which boron is stabilized to form flat semiconducting sheets consisting of a hexagonal lattice of boron atoms with partial hexagon filling (PRL 99 115501, ACSNano 6 7443-7453) . Other structures were proposed based on results from an evolutionary algorithm (PRL 112 085502). These structures are metallic and one even features a distorted Dirac cone near the Fermi level. Experimental evidence for 2D boron is still lacking but the recently proposed molecular synthesis of a flat all-boron molecule is a promising route to achieve this goal (Nat.Comms. 5 3113). Our research aims at providing a first-principles based description of these materials' properties to help in their identification. DFT is used to calculate phonon dispersion and associated Raman scattering spectra. We report some marked discrepancy between our findings and results from the recent literature and address the deviation using two methods for phonon dispersion. We also simulated STM images at various bias potentials to reveal the electronic symmetry of each material.

  15. Averaging anisotropic cosmologies

    International Nuclear Information System (INIS)

    We examine the effects of spatial inhomogeneities on irrotational anisotropic cosmologies by looking at the average properties of anisotropic pressure-free models. Adopting the Buchert scheme, we recast the averaged scalar equations in Bianchi-type form and close the standard system by introducing a propagation formula for the average shear magnitude. We then investigate the evolution of anisotropic average vacuum models and those filled with pressureless matter. In the latter case we show that the backreaction effects can modify the familiar Kasner-like singularity and potentially remove Mixmaster-type oscillations. The presence of nonzero average shear in our equations also allows us to examine the constraints that a phase of backreaction-driven accelerated expansion might put on the anisotropy of the averaged domain. We close by assessing the status of these and other attempts to define and calculate 'average' spacetime behaviour in general relativity

  16. Anisotropic Metamaterial Optical Fibers

    CERN Document Server

    Pratap, Dheeraj; Pollock, Justin G; Iyer, Ashwin K

    2014-01-01

    Internal physical structure can drastically modify the properties of waveguides: photonic crystal fibers are able to confine light inside a hollow air core by Bragg scattering from a periodic array of holes, while metamaterial loaded waveguides for microwaves can support propagation at frequencies well below cutoff. Anisotropic metamaterials assembled into cylindrically symmetric geometries constitute light-guiding structures that support new kinds of exotic modes. A microtube of anodized nanoporous alumina, with nanopores radially emanating from the inner wall to the outer surface, is a manifestation of such an anisotropic metamaterial optical fiber. The nanopores, when filled with a plasmonic metal such as silver or gold, greatly increase the electromagnetic anisotropy. The modal solutions in anisotropic circular waveguides can be uncommon Bessel functions with imaginary orders.

  17. HEXBU-3D, a three-dimensional PWR-simulator program for hexagonal fuel assemblies

    International Nuclear Information System (INIS)

    HEXBU-3D is a three-dimensional nodal simulator program for PWR reactors. It is designed for a reactor core that consists of hexagonal fuel assemblies and of big follower-type control assemblies. The program solves two-group diffusion equations in homogenized fuel assembly geometry by a sophisticated nodal method. The treatment of feedback effects from xenon-poisoning, fuel temperature, moderator temperature and density and soluble boron concentration are included in the program. The nodal equations are solved by a fast two-level iteration technique and the eigenvalue can be either the effective multiplication factor or the boron concentration of the moderator. Burnup calculations are performed by tabulated sets of burnup-dependent cross sections evaluated by a cell burnup program. HEXBY-3D has been originally programmed in FORTRAN V for the UNIVAC 1108 computer, but there is also another version which is operable on the CDC CYBER 170 computer. (author)

  18. Anisotropic elastic plates

    CERN Document Server

    Hwu, Chyanbin

    2010-01-01

    As structural elements, anisotropic elastic plates find wide applications in modern technology. The plates here are considered to be subjected to not only in plane load but also transverse load. In other words, both plane and plate bending problems as well as the stretching-bending coupling problems are all explained in this book. In addition to the introduction of the theory of anisotropic elasticity, several important subjects have are discussed in this book such as interfaces, cracks, holes, inclusions, contact problems, piezoelectric materials, thermoelastic problems and boundary element a

  19. Anisotropic Weyl invariance

    CERN Document Server

    Pérez-Nadal, Guillem

    2016-01-01

    We consider a non-relativistic free scalar field theory with a type of anisotropic scale invariance in which the number of coordinates "scaling like time" is generically greater than one. We propose the Cartesian product of two curved spaces, with the metric of each space parameterized by the other space, as a notion of curved background to which the theory can be extended. We study this type of geometries, and find a family of extensions of the theory to curved backgrounds in which the anisotropic scale invariance is promoted to a local, Weyl-type symmetry.

  20. Boron carbide nanowires: Synthesis and characterization

    Science.gov (United States)

    Guan, Zhe

    Bulk boron carbide has been widely used in ballistic armored vest and the property characterization has been heavily focused on mechanical properties. Even though boron carbides have also been projected as a promising class of high temperature thermoelectric materials for energy harvesting, the research has been limited in this field. Since the thermal conductivity of bulk boron carbide is still relatively high, there is a great opportunity to take advantage of the nano effect to further reduce it for better thermoelectric performance. This dissertation work aims to explore whether improved thermoelectric performance can be found in boron carbide nanowires compared with their bulk counterparts. This dissertation work consists of four main parts. (1) Synthesis of boron carbide nanowires. Boron carbide nanowires were synthesized by co-pyrolysis of diborane and methane at low temperatures (with 879 °C as the lowest) in a home-built low pressure chemical vapor deposition (LPCVD) system. The CVD-based method is energy efficient and cost effective. The as-synthesized nanowires were characterized by electron microscopy extensively. The transmission electron microscopy (TEM) results show the nanowires are single crystalline with planar defects. Depending on the geometrical relationship between the preferred growth direction of the nanowire and the orientation of the defects, the as-synthesized nanowires could be further divided into two categories: transverse fault (TF) nanowires grow normal to the defect plane, while axial fault (AF) ones grow within the defect plane. (2) Understanding the growth mechanism of as-synthesized boron carbide nanowires. The growth mechanism can be generally considered as the famous vapor-liquid-solid (VLS) mechanism. TF and AF nanowires were found to be guided by Ni-B catalysts of two phases. A TF nanowire is lead by a hexagonal phase catalyst, which was proved to be in a liquid state during reaction. While an AF nanowires is catalyzed by a

  1. Fermionic pentagons and NMHV hexagon

    Directory of Open Access Journals (Sweden)

    A.V. Belitsky

    2015-05-01

    Full Text Available We analyze the near-collinear limit of the null polygonal hexagon super Wilson loop in the planar N=4 super-Yang–Mills theory. We focus on its Grassmann components which are dual to next-to-maximal helicity-violating (NMHV scattering amplitudes. The kinematics in question is studied within a framework of the operator product expansion that encodes propagation of excitations on the background of the color flux tube stretched between the sides of Wilson loop contour. While their dispersion relation is known to all orders in 't Hooft coupling from previous studies, we find their form factor couplings to the Wilson loop. This is done making use of a particular tessellation of the loop where pentagon transitions play a fundamental role. Being interested in NMHV amplitudes, the corresponding building blocks carry a nontrivial charge under the SU(4 R-symmetry group. Restricting the current consideration to twist-two accuracy, we analyze two-particle contributions with a fermion as one of the constituents in the pair. We demonstrate that these nonsinglet pentagons obey bootstrap equations that possess consistent solutions for any value of the coupling constant. To confirm the correctness of these predictions, we calculate their contribution to the super Wilson loop demonstrating agreement with recent results to four-loop order in 't Hooft coupling.

  2. Gluing Hexagons at Three Loops

    CERN Document Server

    Basso, Benjamin; Komatsu, Shota; Vieira, Pedro

    2015-01-01

    We perform extensive three-loop tests of the hexagon bootstrap approach for structure constants in planar $\\mathcal{N}=4$ SYM theory. We focus on correlators involving two BPS operators and one non-BPS operator in the so-called $SL(2)$ sector. At three loops, such correlators receive wrapping corrections from mirror excitations flowing in either the adjacent or the opposing channel. Amusingly, we find that the first type of correction coincides exactly with the leading wrapping correction for the spectrum (divided by the one-loop anomalous dimension). We develop an efficient method for computing the second type of correction for operators with any spin. The results are in perfect agreement with the recently obtained three-loop perturbative data by Chicherin, Drummond, Heslop, Sokatchev [2] and by Eden [3]. We also derive the integrand for general multi-particle wrapping corrections, which turns out to take a remarkably simple form. As an application we estimate the loop order at which various new physical eff...

  3. Fermionic pentagons and NMHV hexagon

    CERN Document Server

    Belitsky, A V

    2014-01-01

    We analyze the near-collinear limit of the null polygonal hexagon super Wilson loop in the planar $\\mathcal{N} = 4$ superYang-Mills theory. We focus on its Grassmann components which are dual to next-to-maximally helicity-violating (NMHV) scattering amplitudes. The kinematics in question is studied within a framework of the operator product expansion that encodes propagation of excitations on the background of the color flux tube stretched between the sides of Wilson loop contour. While their dispersion relation is known to all orders in 't Hooft coupling from previous studies, we find their form factor couplings to the Wilson loop. This is done making use of a particular tessellation of the loop where pentagon transitions play a fundamental role. Being interested in NMHV amplitudes, the corresponding building blocks carry a nontrivial charge under the SU(4) R-symmetry group. Restricting the current consideration to twist-two accuracy, we analyze two-particle contributions with a fermion as one of the constit...

  4. Fermionic pentagons and NMHV hexagon

    Science.gov (United States)

    Belitsky, A. V.

    2015-05-01

    We analyze the near-collinear limit of the null polygonal hexagon super Wilson loop in the planar N = 4 super-Yang-Mills theory. We focus on its Grassmann components which are dual to next-to-maximal helicity-violating (NMHV) scattering amplitudes. The kinematics in question is studied within a framework of the operator product expansion that encodes propagation of excitations on the background of the color flux tube stretched between the sides of Wilson loop contour. While their dispersion relation is known to all orders in 't Hooft coupling from previous studies, we find their form factor couplings to the Wilson loop. This is done making use of a particular tessellation of the loop where pentagon transitions play a fundamental role. Being interested in NMHV amplitudes, the corresponding building blocks carry a nontrivial charge under the SU(4) R-symmetry group. Restricting the current consideration to twist-two accuracy, we analyze two-particle contributions with a fermion as one of the constituents in the pair. We demonstrate that these nonsinglet pentagons obey bootstrap equations that possess consistent solutions for any value of the coupling constant. To confirm the correctness of these predictions, we calculate their contribution to the super Wilson loop demonstrating agreement with recent results to four-loop order in 't Hooft coupling.

  5. Gluing hexagons at three loops

    Science.gov (United States)

    Basso, Benjamin; Goncalves, Vasco; Komatsu, Shota; Vieira, Pedro

    2016-06-01

    We perform extensive three-loop tests of the hexagon bootstrap approach for structure constants in planar N = 4 SYM theory. We focus on correlators involving two BPS operators and one non-BPS operator in the so-called SL (2) sector. At three loops, such correlators receive wrapping corrections from mirror excitations flowing in either the adjacent or the opposing channel. Amusingly, we find that the first type of correction coincides exactly with the leading wrapping correction for the spectrum (divided by the one-loop anomalous dimension). We develop an efficient method for computing the second type of correction for operators with any spin. The results are in perfect agreement with the recently obtained three-loop perturbative data by Chicherin, Drummond, Heslop, Sokatchev [2] and by Eden [3]. We also derive the integrand for general multi-particle wrapping corrections, which turns out to take a remarkably simple form. As an application we estimate the loop order at which various new physical effects are expected to kick-in.

  6. Hexagonal image processing a practical approach

    CERN Document Server

    Middleton, Lee

    2006-01-01

    This book provides an introduction to the processing of hexagonally sampled images, includes a survey of the work done in the field, and presents a novel framework for hexagonal image processing (HIP) based on hierarchical aggregates. The strengths offered by hexagonal lattices over square lattices to define digital images are considerable: higher packing density; uniform connectivity of points (pixels) in the lattice; better angular resolution by virtue of having more nearest neighbours; and superlative representation of curves. The utility of the HIP framework is shown by implementing severa

  7. Hybrid-PIC Modeling of the Transport of Atomic Boron in a Hall Thruster

    Science.gov (United States)

    Smith, Brandon D.; Boyd, Iaian D.; Kamhawi, Hani

    2015-01-01

    Computational analysis of the transport of boron eroded from the walls of a Hall thruster is performed by implementing sputter yields of hexagonal boron nitride and velocity distribution functions of boron within the hybrid-PIC model HPHall. The model is applied to simulate NASA's HiVHAc Hall thruster at a discharge voltage of 500V and discharge powers of 1-3 kW. The number densities of ground- and 4P-state boron are computed. The density of ground-state boron is shown to be a factor of about 30 less than the plasma density. The density of the excited state is shown to be about three orders of magnitude less than that of the ground state, indicating that electron impact excitation does not significantly affect the density of ground-state boron in the discharge channel or near-field plume of a Hall thruster. Comparing the rates of excitation and ionization suggests that ionization has a greater influence on the density of ground-state boron, but is still negligible. The ground-state boron density is then integrated and compared to cavity ring-down spectroscopy (CRDS) measurements for each operating point. The simulation results show good agreement with the measurements for all operating points and provide evidence in support of CRDS as a tool for measuring Hall thruster erosion in situ.

  8. On the Newtonian anisotropic configurations

    Energy Technology Data Exchange (ETDEWEB)

    Shojai, F. [University of Tehran, Department of Physics, Tehran (Iran, Islamic Republic of); Institute for Research in Fundamental Sciences (IPM), Foundations of Physics Group, School of Physics, Tehran (Iran, Islamic Republic of); Fazel, M.R.; Stepanian, A. [University of Tehran, Department of Physics, Tehran (Iran, Islamic Republic of); Kohandel, M. [Alzahra University, Department of Sciences, Tehran (Iran, Islamic Republic of)

    2015-06-15

    In this paper we are concerned with the effects of an anisotropic pressure on the boundary conditions of the anisotropic Lane-Emden equation and the homology theorem. Some new exact solutions of this equation are derived. Then some of the theorems governing the Newtonian perfect fluid star are extended, taking the anisotropic pressure into account. (orig.)

  9. Carbon-rich hexagonal (BN)C alloys

    Energy Technology Data Exchange (ETDEWEB)

    Uddin, M. R.; Li, J.; Lin, J. Y.; Jiang, H. X., E-mail: hx.jiang@ttu.edu [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2015-06-07

    Thin films of hexagonal boron nitride carbon, h-(BN){sub 1−x}(C{sub 2}){sub x}, alloys in the C-rich side have been synthesized by metal-organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. X-ray diffraction measurements confirmed single hexagonal phase of h-(BN){sub 1−x}(C{sub 2}){sub x} epilayers. Electrical transport and Raman spectroscopy measurements results revealed evidences that homogenous h-(BN){sub 1−x}(C{sub 2}){sub x} alloys with x ≥ 95% can be synthesized by MOCVD at a growth temperature of 1300 °C. The variable temperature Hall-effect measurements suggested that a bandgap opening of about 93 meV with respect to graphite has been obtained for h-(BN){sub 1−x}(C{sub 2}){sub x} with x = 0.95, which is consistent with the expected value deduced from the alloy dependence of the energy gap of homogenous h-(BN){sub 1−x}(C{sub 2}){sub x} alloys. Atomic composition results obtained from x-ray photoelectron spectroscopy measurements revealed that the carrier type in C-rich h-(BN){sub 1−x}(C{sub 2}){sub x} alloys is controlled by the stoichiometry ratio between the B and N via changing the V/III ratio during the growth. The demonstration of bandgap opening and conductivity control in C-rich h-(BN){sub 1−x}(C{sub 2}){sub x} alloys provide feasibilities for realizing technologically significant devices including infrared (IR) emitters and detectors active from near to far IR and multi-spectral IR emitters and detectors.

  10. Anisotropic Lyra cosmology

    Indian Academy of Sciences (India)

    B B Bhowmik; A Rajput

    2004-06-01

    Anisotropic Bianchi Type-I cosmological models have been studied on the basis of Lyra's geometry. Two types of models, one with constant deceleration parameter and the other with variable deceleration parameter have been derived by considering a time-dependent displacement field.

  11. Anisotropic Ambient Volume Shading.

    Science.gov (United States)

    Ament, Marco; Dachsbacher, Carsten

    2016-01-01

    We present a novel method to compute anisotropic shading for direct volume rendering to improve the perception of the orientation and shape of surface-like structures. We determine the scale-aware anisotropy of a shading point by analyzing its ambient region. We sample adjacent points with similar scalar values to perform a principal component analysis by computing the eigenvectors and eigenvalues of the covariance matrix. In particular, we estimate the tangent directions, which serve as the tangent frame for anisotropic bidirectional reflectance distribution functions. Moreover, we exploit the ratio of the eigenvalues to measure the magnitude of the anisotropy at each shading point. Altogether, this allows us to model a data-driven, smooth transition from isotropic to strongly anisotropic volume shading. In this way, the shape of volumetric features can be enhanced significantly by aligning specular highlights along the principal direction of anisotropy. Our algorithm is independent of the transfer function, which allows us to compute all shading parameters once and store them with the data set. We integrated our method in a GPU-based volume renderer, which offers interactive control of the transfer function, light source positions, and viewpoint. Our results demonstrate the benefit of anisotropic shading for visualization to achieve data-driven local illumination for improved perception compared to isotropic shading. PMID:26529745

  12. Dynamics of Anisotropic Universes

    CERN Document Server

    Pérez, J

    2006-01-01

    We present a general study of the dynamical properties of Anisotropic Bianchi Universes in the context of Einstein General Relativity. Integrability results using Kovalevskaya exponents are reported and connected to general knowledge about Bianchi dynamics. Finally, dynamics toward singularity in Bianchi type VIII and IX universes are showed to be equivalent in some precise sence.

  13. Physical vapor deposition of cubic boron nitride thin films

    International Nuclear Information System (INIS)

    Cubic boron nitride was successfully deposited using physical vapor-deposition methods. RF-sputtering, magnetron sputtering, dual-ion-beam deposition, and ion-beam-assisted evaporation were all used. The ion-assisted evaporation, using boron evaporation and bombardment by nitrogen and argon ions, led to successful cubic boron nitride growth over the widest and most controllable range of conditions. It was found that two factors were important for c-BN growth: bombardment of the growing film and the presence of argon. A systematic study of the deposition conditions was carried out. It was found that the value of momentum transferred into the growing from by the bombarding ions was critical. There was a very narrow transition range in which mixed cubic and hexagonal phase films were prepared. Momentum-per-atom value took into account all the variables involved in ion-assisted deposition: deposition rate, ion energy, ion flux, and ion species. No other factor led to the same control of the process. The role of temperature was also studied; it was found that at low temperatures only mixed cubic and hexagonal material are deposited

  14. The self-assemble GaN:Mg inverted hexagonal pyramids formatted by photoelectrochemical wet-etching process

    International Nuclear Information System (INIS)

    Small sized self-assembled inverted hexagonal pyramids consisting of GaN:Mg and InGaN/GaN multi-quantum-well (MQW) structures were formed using photoelectrochemical wet etching. Lateral etching, bottom-up etching, and anisotropic etching are the formation mechanism of the pyramids during the etching process sequentially. The dimension of these inverted hexagonal pyramids was measured as 245 nm in width and 184 nm in height, and the angle between the top GaN:Mg surface and the pyramid sidewall was calculated at about 56.3o. Due to the strain relief in the nano-disk MQW structure we induced an emission peak of photoluminescence at the tip of the inverted hexagonal pyramid which had a strong blue shift of 244 meV at 100 K

  15. First boronization in KSTAR

    Energy Technology Data Exchange (ETDEWEB)

    Hong, S.H., E-mail: sukhhong@nfri.re.kr [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, K.S.; Kim, K.M.; Kim, H.T.; Kim, G.P. [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Sun, J.H.; Woo, H.J. [Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Park, J.M.; Kim, W.C.; Kim, H.K.; Park, K.R.; Yang, H.L.; Na, H.K. [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Chung, K.S. [Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of)

    2010-11-15

    First boronization in KSTAR is reported. KSTAR boronization system is based on a carborane (C{sub 2}B{sub 10}H{sub 12}) injection system. The design, construction, and test of the system are accomplished and it is tested by using a small vacuum vessel before it is mounted to a KSTAR port. After the boronization in KSTAR, impurity levels are significantly reduced by factor of 3 (oxygen) and by 10 (carbon). Characteristics of a-C/B:H thin films deposited by carborane vapor are investigated. Re-condensation of carborane vapor during the test phase has been reported.

  16. Optical absorption of boron nitride nanomaterials

    International Nuclear Information System (INIS)

    Optical absorption spectra have been measured for hexagonal boron nitride (h-BN), rhombohedral BN(rh-BN), and material obtained by laser vaporization of BN target under a nitrogen atmosphere and contained single-wall BN-nanotubes. Band gap of the BN materials was found to have a value of 6.0-6.3 eV. The spectra of h -BN and vaporized material exhibited a peak at ∝5.5 eV, moreover, the latter sample showed an absorption band around 4.5 eV. The vaporized material has been fractionated to the BN-platelets and single-wall BN-nanotubes. Absorption peaks, located bellow the bottom of the conductance band, were found to be characteristics of thin BN-platelets and they could be attributed to defects in BN network. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Anisotropic mechanical properties of graphene sheets from molecular dynamics

    International Nuclear Information System (INIS)

    Anisotropic mechanical properties are observed for a sheet of graphene along different load directions. The anisotropic mechanical properties are attributed to the hexagonal structure of the unit cells of the graphene. Under the same tensile loads, the edge bonds bear larger load in the longitudinal mode (LM) than in the transverse mode (TM), which causes fracture sooner in LM than in TM. The Young's modulus and the third order elastic modulus for the LM are slightly larger than that for the TM. Simulation also demonstrates that, for both LM and TM, the loading and unloading stress-strain response curves overlap as long as the graphene is unloaded before the fracture point. This confirms that graphene sustains complete elastic and reversible deformation in the elongation process.

  18. Synthesis characterization and catalytic action of hexagonal gold nanoparticles using essential oils extracted from Anacardium occidentale

    Science.gov (United States)

    Sheny, D. S.; Mathew, Joseph; Philip, Daizy

    2012-11-01

    A new phytochemical method for the synthesis of gold nanoparticles is reported. The essential oils extracted from the fresh leaves of Anacardium occidentale are used for the reduction of auric acid to Au nanoparticles (NPs). The formation and morphology of synthesized NPs are investigated with the help of UV-visible, TEM and FTIR spectroscopy. The NPs synthesized at room temperature are mono-dispersed and hexagonal in shape with an average size of 36 nm while those prepared at higher temperature are composed of a mixture of anisotropic particles. The UV-visible absorption spectra of these anisotropic NPs show asymmetry in the longer wavelength side. The quantity of oil is an important criterion modulating the shape of NPs. Possible biochemical mechanism leading to the formation of NPs is studied using FTIR spectroscopy. The potential of synthesized Au NPs as catalyst is explored for the hydrogenation of p-nitro phenol to p-amino phenol at room temperature.

  19. Boron in sillimanite.

    Science.gov (United States)

    Grew, E S; Hinthorne, J R

    1983-08-01

    Sillimanite in six granulite-facies, kornerupine-bearing rocks contains 0.035 to 0.43 percent B(2)O(3) and 0.02 to 0.23 percent MgO (by weight). Substitution of boron for silicon and magnesium for aluminum is coupled such that the ratio of magnesium to boron is about 0.5. Sillimanite incorporates more than 0.1 percent B(2)O(3) only at high temperatures in a boron-rich environment at very low partial pressures of water. In the amphibolite facies, the sillimanite boron contents are too low to appreciably affect the stability relations of sillimanite with kyanite and andalusite. PMID:17830955

  20. A template-free solvent-mediated synthesis of high surface area boron nitride nanosheets for aerobic oxidative desulfurization.

    Science.gov (United States)

    Wu, Peiwen; Zhu, Wenshuai; Chao, Yanhong; Zhang, Jinshui; Zhang, Pengfei; Zhu, Huiyuan; Li, Changfeng; Chen, Zhigang; Li, Huaming; Dai, Sheng

    2016-01-01

    Hexagonal boron nitride nanosheets (h-BNNs) with rather high specific surface area (SSA) are important two-dimensional layer-structured materials. Here, a solvent-mediated synthesis of h-BNNs revealed a template-free lattice plane control strategy that induced high SSA nanoporous structured h-BNNs with outstanding aerobic oxidative desulfurization performance. PMID:26502800

  1. Thermal stability of hexagonal OsB2

    International Nuclear Information System (INIS)

    The synthesis of novel hexagonal ReB2-type OsB2 ceramic powder was performed by high energy ball milling of elemental Os and B powders. Two different sources of B powder have been used for this mechanochemical synthesis. One B powder consisted of a mixture of amorphous and crystalline phases and a mixture of 10B and 11B isotopes with a fine particle size, while another B powder was a purely crystalline (rhombohedral) material consisting of enriched 11B isotope with coarse particle size. The same Os powder was used for the synthesis in both cases. It was established that, in the first case, the hexagonal OsB2 phase was the main product of synthesis with a small quantity of Os2B3 phase present after synthesis as an intermediate product. In the second case, where coarse crystalline 11B powder was used as a raw material, only Os2B3 boride was synthesized mechanochemically. The thermal stability of hexagonal OsB2 powder was studied by heating under argon up to 876 °C and cooling in vacuo down to −225 °C. During the heating, the sacrificial reaction 2OsB2+3O2→2Os+2B2O3 took place due to presence of O2/water vapor molecules in the heating chamber, resulting in the oxidation of B atoms and formation of B2O3 and precipitation of Os metal out of the OsB2 lattice. As a result of such phase changes during heating, the lattice parameters of hexagonal OsB2 changed significantly. The shrinkage of the a lattice parameter was recorded in 276–426 °C temperature range upon heating, which was attributed to the removal of B atoms from the OsB2 lattice due to oxidation followed by the precipitation of Os atoms and formation of Os metal. While significant structural changes occurred upon heating due to presence of O2, the hexagonal OsB2 ceramic demonstrated good phase stability upon cooling in vacuo with linear shrinkage of the lattice parameters and no phase changes detected during cooling. - Graphical abstract: The in situ high temperature XRD contour plot (A) and XRD patterns

  2. Hexagonal OsB{sub 2}: Sintering, microstructure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Zhilin [Department of Mechanical and Aerospace Engineering, University of Central Florida, Orlando, FL 32816 (United States); Lugovy, Mykola [Department of Mechanical and Aerospace Engineering, University of Central Florida, Orlando, FL 32816 (United States); Institute for Problems of Materials Science, 3 Krzhizhanivskii Str., Kyiv 03142 (Ukraine); Orlovskaya, Nina, E-mail: Nina.Orlovskaya@ucf.edu [Department of Mechanical and Aerospace Engineering, University of Central Florida, Orlando, FL 32816 (United States); Graule, Thomas; Kuebler, Jakob [Empa, Swiss Federal Laboratories for Materials Science and Technology, Laboratory for High Performance Ceramics, CH-8600 Dubendorf (Switzerland); Mueller, Martin [Laboratory of Mechanical Metallurgy, EPFL, CH-1015 Lausanne (Switzerland); Gao, Huili [Department of Mechanical Engineering, Texas A& M University, College Station, TX 77843 (United States); Radovic, Miladin [Department of Materials Science and Engineering, Texas A& M University, College Station, TX 77843 (United States); Cullen, David A. [Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

    2015-06-15

    Highlights: • ReB{sub 2}-type hexagonal OsB{sub 2} powder has been densified by spark plasma sintering. • The sintered OsB{sub 2} contains ∼80 wt.% hexagonal and ∼20 wt.% orthorhombic phases. • The average grain size of the sintered OsB{sub 2} sample was 0.56 ± 0.26 μm. • H = 31 ± 9 GPa and E = 574 ± 112 GPa measured by nanoindentation. - Abstract: The metastable high pressure ReB{sub 2}-type hexagonal OsB{sub 2} bulk ceramics was produced by spark plasma sintering. The phase composition, microstructure, and mechanical behavior of the sintered OsB{sub 2} were studied by X-ray diffraction, optical microscopy, TEM, SEM, EDS, and nanoindentation. The produced ceramics was rather porous and contained a mixture of hexagonal (∼80 wt.%) and orthorhombic (∼20 wt.%) phases as identified by X-ray diffraction and EBSD analysis. Two boron-rich phases, which do not contain Os, were also identified by TEM and SEM/EDS analysis. Nanoindentation measurements yielded a hardness of 31 ± 9 GPa and Young’s modulus of 574 ± 112 GPa, indicating that the material is rather hard and very stiff; however, it is very prone to crack formation and propagation, which is indicative of a very brittle nature of this material. Improvements in the sintering regime are required in order to produce dense, homogeneous and single phase hexagonal OsB{sub 2} bulk ceramics.

  3. Fractures in anisotropic media

    Science.gov (United States)

    Shao, Siyi

    Rocks may be composed of layers and contain fracture sets that cause the hydraulic, mechanical and seismic properties of a rock to be anisotropic. Coexisting fractures and layers in rock give rise to competing mechanisms of anisotropy. For example: (1) at low fracture stiffness, apparent shear-wave anisotropy induced by matrix layering can be masked or enhanced by the presence of a fracture, depending on the fracture orientation with respect to layering, and (2) compressional-wave guided modes generated by parallel fractures can also mask the presence of matrix layerings for particular fracture orientations and fracture specific stiffness. This report focuses on two anisotropic sources that are widely encountered in rock engineering: fractures (mechanical discontinuity) and matrix layering (impedance discontinuity), by investigating: (1) matrix property characterization, i.e., to determine elastic constants in anisotropic solids, (2) interface wave behavior in single-fractured anisotropic media, (3) compressional wave guided modes in parallel-fractured anisotropic media (single fracture orientation) and (4) the elastic response of orthogonal fracture networks. Elastic constants of a medium are required to understand and quantify wave propagation in anisotropic media but are affected by fractures and matrix properties. Experimental observations and analytical analysis demonstrate that behaviors of both fracture interface waves and compressional-wave guided modes for fractures in anisotropic media, are affected by fracture specific stiffness (controlled by external stresses), signal frequency and relative orientation between layerings in the matrix and fractures. A fractured layered medium exhibits: (1) fracture-dominated anisotropy when the fractures are weakly coupled; (2) isotropic behavior when fractures delay waves that are usually fast in a layered medium; and (3) matrix-dominated anisotropy when the fractures are closed and no longer delay the signal. The

  4. Anisotropic progressive photon mapping

    Science.gov (United States)

    Liu, XiaoDan; Zheng, ChangWen

    2014-01-01

    Progressive photon mapping solves the memory limitation problem of traditional photon mapping. It gives the correct radiance with a large passes, but it converges slowly. We propose an anisotropic progressive photon mapping method to generate high quality images with a few passes. During the rendering process, different from standard progressive photon mapping, we store the photons on the surfaces. At the end of each pass, an anisotropic method is employed to compute the radiance of each eye ray based on the stored photons. Before move to a new pass, the photons in the scene are cleared. The experiments show that our method generates better results than the standard progressive photon mapping in both numerical and visual qualities.

  5. Molecular anisotropic magnetoresistance

    OpenAIRE

    Otte, Fabian; Heinze, Stefan; Mokrousov, Yuriy

    2015-01-01

    Using density functional theory calculations, we demonstrate that the effect of anisotropic magnetoresistance (AMR) can be enhanced by orders of magnitude with respect to conventional bulk ferromagnets in junctions containing molecules sandwiched between ferromagnetic leads. We study ballistic transport in metal-benzene complexes contacted by $3d$ transition-metal wires. We show that the gigantic AMR can arise from spin-orbit coupling effects in the leads, drastically enhanced by orbital-symm...

  6. Extremely Anisotropic Scintillations

    CERN Document Server

    Walker, Mark; Bignall, Hayley

    2008-01-01

    A small number of quasars exhibit interstellar scintillation on time-scales less than an hour; their scintillation patterns are all known to be anisotropic. Here we consider a totally anisotropic model in which the scintillation pattern is effectively one-dimensional. For the persistent rapid scintillators J1819+3845 and PKS1257-326 we show that this model offers a good description of the two-station time-delay measurements and the annual cycle in the scintillation time-scale. Generalising the model to finite anisotropy yields a better match to the data but the improvement is not significant and the two additional parameters which are required to describe this model are not justified by the existing data. The extreme anisotropy we infer for the scintillation patterns must be attributed to the scattering medium rather than a highly elongated source. For J1819+3845 the totally anisotropic model predicts that the particular radio flux variations seen between mid July and late August should repeat between late Au...

  7. Closeout of Advanced Boron and Metal Loaded High Porosity Carbons.

    Energy Technology Data Exchange (ETDEWEB)

    Peter C. Eklund (deceased); T. C. Mike Chung; Henry C. Foley; Vincent H. Crespi

    2011-05-01

    The Penn State effort explored the development of new high-surface-area materials for hydrogen storage, materials that could offer enhancement in the hydrogen binding energy through a direct chemical modification of the framework in high specific-surface-area platforms. The team chemically substituted boron into the hexagonal sp2 carbon framework, dispersed metal atoms bound to the boro-carbon structure, and generated the theory of novel nanoscale geometries that can enhance storage through chemical frustration, sheet curvature, electron deficiency, large local fields and mixed hybridization states. New boro-carbon materials were synthesized by high temperature plasma, pyrolysis of boron-carbon precursor molecules, and post-synthesis modification of carbons. Hydrogen uptake has been assessed, and several promising leads have been identified, with the requirement to simultaneously optimize total surface area while maintaining the enhanced hydrogen binding energies already demonstrated.

  8. Tuning the optical response in carbon doped boron nitride nanodots

    KAUST Repository

    Mokkath, Junais Habeeb

    2014-09-04

    Time dependent density functional theory and the hybrid B3LYP functional are used to investigate the structural and optical properties of pristine and carbon doped hexagonal boron nitride nanodots. In agreement with recent experiments, the embedded carbon atoms are found to favor nucleation. Our results demonstrate that carbon clusters of different shapes promote an early onset of absorption by generating in-gap states. The nanodots are interesting for opto-electronics due to their tunable optical response in a wide energy window. We identify cluster sizes and shapes with optimal conversion efficiency for solar radiation and a wide absorption range form infrared to ultraviolet. This journal is

  9. On vortex shedding from a hexagonal cylinder

    International Nuclear Information System (INIS)

    The unsteady wake behind a hexagonal cylinder in cross-flow is investigated numerically. The time-dependent three-dimensional Navier-Stokes equations are solved for three different Reynolds numbers Re and for two different cylinder orientations. The topology of the vortex shedding depends on the orientation and the Strouhal frequency is generally higher in the wake of a face-oriented cylinder than behind a corner-oriented cylinder. For both orientations a higher Strouhal number St is observed when Re is increased from 100 to 500 whereas St is unaffected by a further increase up to Re=1000. The distinct variation of St with the orientation of the hexagonal cylinder relative to the oncoming flow is opposite of earlier findings for square cylinder wakes which exhibited a higher St with corner orientation than with face orientation. -- Highlights: → The first direct numerical simulation on hexagonal cylinder. → The Letter focuses on vortex shedding from a 3D hexagonal cylinder. → Two orientations and 3 Reynolds numbers are considered. → Variation of Strouhal number between hexagonal and square cylinder is discussed.

  10. Preparation and characterization of sputtered boron nitride and boron carbide films and their modification by ion implantation

    International Nuclear Information System (INIS)

    Nanocrystalline cubic boron nitride and boron carbide films have been synthesized using sputtering. The relationship between the structures and properties as well as the influence of the deposition parameters, such as rf power, bias voltage, substrate temperature, composition and flow rate of the sputtering gas, on the structures and properties have been studied. The influence of the ion bombardment could be described by the specific ion momentum P*=[ion momentum.(ion flux/atom flux)]. The specific ion momentum was found to be proportional to the rf power and to the 1.5th power of the bias voltage. Two phases have been identified in our boron nitride films: hexagonal boron nitride (h-BN) and cubic boron nitride (c-BN); the films were either single phase or contained a mixture of these two phases. Nanocrystalline boron films have been grown with a deposition rate of 2 nm/s not only on Si but also on hard metal (WC-6%Co) substrates. Stoichiometric and crystalline films have already been grown at room temperature (about 0.1 Tm, Tm=melting point-3900 K). All the films contained about 8 at% carbon and 6 at% oxygen as impurities, which come mainly from the targt. The concentration of the impurities is independent of the deposition paramters. The growth of c-BN appears after the specific ion momentum larger than a threshold value, which is dependent on the substrate temperature, composition and on the flow rate of the sputtering gas. The volume content of c-BN runs through a maximum value with increasing specific ion momentum. (orig.)

  11. Boronated liposome development and evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Hawthorne, M.F. [Univ. of California, Los Angeles, CA (United States)

    1995-11-01

    The boronated liposome development and evaluation effort consists of two separate tasks. The first is the development of new boron compounds and the synthesis of known boron species with BNCT potential. These compounds are then encapsulated within liposomes for the second task, biodistribution testing in tumor-bearing mice, which examines the potential for the liposomes and their contents to concentrate boron in cancerous tissues.

  12. Model anisotropic quantum Hall states

    OpenAIRE

    Qiu, R. -Z.; Haldane, F.D.M.; Wan, Xin; Yang, Kun; Yi, Su

    2012-01-01

    Model quantum Hall states including Laughlin, Moore-Read and Read-Rezayi states are generalized into appropriate anisotropic form. The generalized states are exact zero-energy eigenstates of corresponding anisotropic two- or multi-body Hamiltonians, and explicitly illustrate the existence of geometric degrees of in the fractional quantum Hall effect. These generalized model quantum Hall states can provide a good description of the quantum Hall system with anisotropic interactions. Some numeri...

  13. On the Relativistic anisotropic configurations

    CERN Document Server

    Shojai, F; Stepanian, A

    2016-01-01

    In this paper we study anisotropic spherical polytropes within the framework of general relativity. Using the anisotropic Tolman-Oppenheimer-Volkov (TOV) equations, we explore the relativistic anisotropic Lane-Emden equations. We find how the anisotropic pressure affects the boundary conditions of these equations. Also we argue that the behaviour of physical quantities near the center of star changes in the presence of anisotropy. For constant density, a class of exact solution is derived with the aid of a new ansatz and its physical properties are discussed.

  14. Magnetron sputter deposition of boron and boron carbide

    International Nuclear Information System (INIS)

    The fabrication of X-ray optical coatings with greater reflectivity required the development of sputter deposition processes for boron and boron carbide. The use of high density boron and boron carbide (B4C) and a vacuum-brazed target design was required to achieve the required sputter process stability and resistance to the thermal stress created by high rate sputtering. Our results include a description of the target fabrication procedures and sputter process parameters necessary to fabricate B4C and boron modulated thin film structures. (orig.)

  15. Hyperbolic phonon-polaritons in boron nitride for near-field optical imaging and focusing

    Science.gov (United States)

    Li, Peining; Lewin, Martin; Kretinin, Andrey V.; Caldwell, Joshua D.; Novoselov, Kostya S.; Taniguchi, Takashi; Watanabe, Kenji; Gaussmann, Fabian; Taubner, Thomas

    2015-06-01

    Hyperbolic materials exhibit sub-diffractional, highly directional, volume-confined polariton modes. Here we report that hyperbolic phonon polaritons allow for a flat slab of hexagonal boron nitride to enable exciting near-field optical applications, including unusual imaging phenomenon (such as an enlarged reconstruction of investigated objects) and sub-diffractional focusing. Both the enlarged imaging and the super-resolution focusing are explained based on the volume-confined, wavelength dependent propagation angle of hyperbolic phonon polaritons. With advanced infrared nanoimaging techniques and state-of-art mid-infrared laser sources, we have succeeded in demonstrating and visualizing these unexpected phenomena in both Type I and Type II hyperbolic conditions, with both occurring naturally within hexagonal boron nitride. These efforts have provided a full and intuitive physical picture for the understanding of the role of hyperbolic phonon polaritons in near-field optical imaging, guiding, and focusing applications.

  16. Raman spectroscopy measurement of bilayer graphene's twist angle to boron nitride

    International Nuclear Information System (INIS)

    When graphene is placed on hexagonal boron nitride with a twist angle, new properties develop due to the resulting moiré superlattice. Here, we report a method using Raman spectroscopy to make rapid, non-destructive measurements of the twist angle between bilayer graphene and hexagonal boron nitride. The lattice orientation is determined by using flakes with both bilayer and monolayer regions, and using the known Raman signature for the monolayer to measure the twist angle of the entire flake. The widths of the second order Raman peaks are found to vary linearly in the superlattice period and are used to determine the twist angle. The results are confirmed by using transport measurements to infer the superlattice period by the charge density required to reach the secondary resistance peaks. Small twist angles are also found to produce a significant modification of the first order Raman G band peak

  17. Relaxation of Anisotropic Glasses

    DEFF Research Database (Denmark)

    Deubener, Joachim; Martin, Birgit; Wondraczek, Lothar; Yue, Yuanzheng

    2004-01-01

    Anisotropic glasses are obtained from uniaxial compressing and pulling of glass forming liquids above the transition temperature range. To freeze-in, at least partly the structural state of the flowing melt, cylindrical samples were subjected to a controlled cooling process under constant load...... differential scanning calorimetry (DSC) and dilatometry. The energy release and expansion-shrinkage behaviour of the glasses are investigated as a function of the applied deformation stress. Structural origins of the frozen-in birefringence induced by viscous flow are discussed and correlation between the...

  18. Anisotropically Inflating Universes

    CERN Document Server

    Barrow, J D; Barrow, John D.; Hervik, Sigbjorn

    2008-01-01

    We show that in theories of gravity that add quadratic curvature invariants to the Einstein-Hilbert action there exist expanding vacuum cosmologies with positive cosmological constant which do not approach the de Sitter universe. Exact solutions are found which inflate anisotropically. This behaviour is driven by the Ricci curvature invariant and has no counterpart in the general relativistic limit. These examples show that the cosmic no-hair theorem does not hold in these higher-order extensions of general relativity and raises new questions about the ubiquity of inflation in the very early universe and the thermodynamics of gravitational fields.

  19. Anisotropic Stars Exact Solutions

    CERN Document Server

    Dev, K; Dev, Krsna; Gleiser, Marcelo

    2000-01-01

    We study the effects of anisotropic pressure on the properties of spherically symmetric, gravitationally bound objects. We consider the full general relativistic treatment of this problem and obtain exact solutions for various form of equations of state connecting the radial and tangential pressures. It is shown that pressure anisotropy can have significant effects on the structure and properties of stellar objects. In particular, the maximum value of 2M/R can approach unity (2M/R < 8/9 for isotropic objects) and the surface redshift can be arbitrarily large.

  20. Edge Chemistry Effects on the Structural, Electronic, and Electric Response Properties of Boron Nitride Quantum Dots

    OpenAIRE

    Krepel, Dana; Kalikhman-Razvozov, Lena; Hod, Oded

    2014-01-01

    The effects of edge hydrogenation and hydroxylation on the relative stability and electronic properties of hexagonal boron nitride quantum dots (h-BNQDs) are investigated. Zigzag edge hydroxylation is found to result in considerable energetic stabilization of h-BNQDs as well as a reduction of their electronic gap with respect to their hydrogenated counterparts. The application of an external in-plane electric field leads to a monotonous decrease of the gap. When compared to their edge-hydroge...

  1. Hyperbolic phonon-polaritons in boron nitride for near-field optical imaging and focusing

    OpenAIRE

    Li, Peining; Lewin, Martin; Kretinin, Andrey V.; Caldwell, Joshua D.; Novoselov, Kostya S.; Taniguchi, Takashi; Watanabe, Kenji; Gaussmann, Fabian; Taubner, Thomas

    2015-01-01

    Hyperbolic materials exhibit sub-diffractional, highly directional, volume-confined polariton modes. Here we report that hyperbolic phonon polaritons allow for a flat slab of hexagonal boron nitride to enable exciting near-field optical applications, including unusual imaging phenomenon (such as an enlarged reconstruction of investigated objects) and sub-diffractional focusing. Both the enlarged imaging and the super-resolution focusing are explained based on the volume-confined, wavelength d...

  2. Picosecond laser structuration under high pressures: observation of boron nitride nanorods

    OpenAIRE

    Museur, L.; Petitet, J. P.; Michel, J.P.; Marine, V.; Anglos, D.; Fotakis, C.; Kanaev, A.V.

    2008-01-01

    We report on picosecond UV-laser processing of hexagonal boron nitride (hBN) at moderately high pressures above 500 bar. The main effect is specific to the ambient gas and laser pulse duration in the ablation regime: when samples are irradiated by 5 ps or 0.45 ps laser pulses in nitrogen gas environment, multiple nucleation of a new crystalline product - BN nanorods - takes place. This process is triggered on structural defects, which number density strongly decreases upon recrystallization. ...

  3. Optics of anisotropic nanostructures

    Science.gov (United States)

    Rokushima, Katsu; Antoš, Roman; Mistrík, Jan; Višňovský, Štefan; Yamaguchi, Tomuo

    2006-07-01

    The analytical formalism of Rokushima and Yamakita [J. Opt. Soc. Am. 73, 901-908 (1983)] treating the Fraunhofer diffraction in planar multilayered anisotropic gratings proved to be a useful introduction to new fundamental and practical situations encountered in laterally structured periodic (both isotropic and anisotropic) multilayer media. These are employed in the spectroscopic ellipsometry for modeling surface roughness and in-depth profiles, as well as in the design of various frequency-selective elements including photonic crystals. The subject forms the basis for the solution of inverse problems in scatterometry of periodic nanostructures including magnetic and magneto-optic recording media. It has no principal limitations as for the frequencies and period to radiation wavelength ratios and may include matter wave diffraction. The aim of the paper is to make this formalism easily accessible to a broader community of students and non-specialists. Many aspects of traditional electromagnetic optics are covered as special cases from a modern and more general point of view, e.g., plane wave propagation in isotropic media, reflection and refraction at interfaces, Fabry-Perot resonator, optics of thin films and multilayers, slab dielectric waveguides, crystal optics, acousto-, electro-, and magneto-optics, diffraction gratings, etc. The formalism is illustrated on a model simulating the diffraction on a ferromagnetic wire grating.

  4. First-principles study on the structural, cohesive and electronic properties of rhombohedral Mo2B5 as compared with hexagonal MoB2

    International Nuclear Information System (INIS)

    The full-potential linearized augmented plane wave method using the generalized gradient approximation (FLAPW-GGA) has been applied to provide comparison and contrast for Mo borides with various structural types: rhombohedral Mo2B5 versus hexagonal MoB2. The equilibrium lattice parameters, energies of formations, total and partial densities of states, electronic density distributions and the theoretical shapes of boron K-edge X-ray emission spectra are obtained and compared to available data

  5. Three-chain B{sub 6n+14} cages as possible precursors for the syntheses of boron fullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Haigang, E-mail: luhg@sxu.edu.cn; Li, Si-Dian [Key Laboratory of Chemical Biology and Molecular Engineering of the Education Ministry, Institute of Molecular Science, Shanxi University, Taiyuan, Shanxi 030006 (China)

    2013-12-14

    Using the first principle methods, we proposed a series of three-chain boron cages B{sub 6n+14} (n = 1–12) which are mainly built by fusing three boron semi-double-rings. Their simple geometric structures (approximate D{sub 3} or C{sub 3} symmetry) facilitate their bottom-up syntheses from the hexagonal B{sub 7} and the double-chain boron clusters, such as B{sub 2}, B{sub 4}, B{sub 6}, B{sub 8}H{sub 2}, B{sub 10}H{sub 2}, B{sub 12}H{sub 2}, and the double ring B{sub 20}. The spherical shapes of these three-chain boron cages show that they could be taken as the possible precursors to further synthesize the boron fullerenes, such as B{sub 80}. Therefore, these three-chain boron cages provide a possible synthesis pathway of the boron fullerenes from the experimentally synthesized small planar boron clusters.

  6. Anisotropic spheres in general relativity

    International Nuclear Information System (INIS)

    A prescription originally conceived for perfect fluids is extended to the case of anisotropic pressures. The method is used to obtain exact analytical solutions of the Einstein equations for spherically symmetric selfgravitating distribution of anisotropic matter. The solutions are matched to the Schwarzschild exterior metric. (author). 15 refs

  7. Investigation of the boron nitrate compound for the use of neutron shield

    International Nuclear Information System (INIS)

    Full text: Boron nitride can be found in hexagonal structure (hBN) which is very much like graphite or in cubic structure with properties very close to diamond. Since cBN is the hardest known material after diamond is used in making hard metal covers. In addition, while diamond can be doped only in p type, both p and n type doping is possible in cBN, therefore cBN can be used to make p-n junction which is a basic part of the microelectronic circuits. That means cBN can be used to make a detector or Light Emitting Diode (LED) in violet-blue region. In addition to these optoelectronic properties, cBN based circuit parts are expected to withstand very high temperatures due to the higher forbidden energy gap of cBN compared to that of diamond. Considering the crucial role of neutron capture capability of boron, in this study, it is focused on the shielding behavior of boron nitride. For that purpose, locally obtained boron nitride particles are subjected to some characterization analyses to identify the boron nitride particles. After the identification the neutron radiation experiments are conducted. For the characterization analyses, X-ray Diffraction (XRD) and Fourier Transform Infrared Spectroscopy (FT-IR) techniques are conducted. For the radiation experiments boron nitride particles are pelletized with 40 MPa hydraulic press than neutron permeability experiments are carried through the thermal neutrons which were generated from Ra-Be source moderated in a howitzer. As a conclusion boron nitride particles had a neutron permeability value at about 63%. It is seen that boron nitride can be used for the purpose of neutron radiation. Keywords: boron nitride, XRD, FT-IR, neutron permeability

  8. Boron cures cancer

    International Nuclear Information System (INIS)

    In this work the authors cite a few examples of the use of radiopharmaceuticals for diagnostic and therapeutic purposes in nuclear medicine. They point to the possibility of boron neutron capture therapy and the use for the neutron capture therapy of other light elements.

  9. Ultraviolet dielectric hyperlens with layered graphene and boron nitride

    CERN Document Server

    Wang, Junxia; Zhang, Baile

    2012-01-01

    The concept of hyperlens, as a novel transformation optics device, is a promising real-time super-resolution lens that can effectively transform evanescent waves into propagating waves and thus break the diffraction limit. However, previous hyperlens implementations usually adopted metal which would absorb most energy during light transmission and thus deteriorate imaging efficiency. Here we propose a novel hyperlens design based on dielectric layered graphene and h-boron nitride (h-BN) whose performance can surpass the counterpart design with metal. Our first-principle and Kramers-Kronig relation calculation shows that both layered graphene and layered h-BN exhibit strong anisotropic properties in ultraviolet spectrum regions, where their permittivity components perpendicular to the optic axis can be negative while the components parallel to the optic axis can be positive. Based on the anisotropic properties, flat and cylindrical hyperlenses are designed and numerically verified with layered graphene at 1200...

  10. Boron contamination in drinking - irrigation water and boron removal methods

    Directory of Open Access Journals (Sweden)

    Meltem Bilici Başkan

    2014-03-01

    Full Text Available Boron presents in IIIA group of periodic table and has high ionization capacity. Therefore it is classified as a metalloid. Average boron concentration in earth's crust is 10 mg/kg. It presents in the environment as a salts of Ca, Na, and Mg. Boron reserves having high concentration and economical extent are found mostly in Turkey and in arid, volcanic and high hydrothermal activity regions of U.S. as compounds of boron attached to oxygen. Boron is an essential micronutrient for plants, although it may be toxic at higher levels. The range in which it is converted from a nutrient to a contaminant is quite narrow. Boron presents in water environment as a boric acid and rarely borate salts. The main boron sources, whose presence is detected in surface waters, are urban wastes and industrial wastes, which can come from a wide range of different activities as well as several chemical products used in agriculture. In Turkey, the most pollutant toxic element in drinking and irrigation water is boron. Therefore boron removal is very important in terms of human health and agricultural products in high quality. Mainly boron removal methods from drinking water and irrigation water are ion exchange, ultrafiltration, reverse osmosis, and adsorption.

  11. Process for microwave sintering boron carbide

    International Nuclear Information System (INIS)

    A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy

  12. Two-dimensional hexagonal smectic structure formed by topological defects

    Science.gov (United States)

    Dolganov, P. V.; Shuravin, N. S.; Fukuda, Atsuo

    2016-03-01

    A two-dimensional hexagonal smectic structure formed by point topological defects and intersecting defect walls was discovered. This unique structure was predicted theoretically about 30 years ago but not observed. For a long time the hexagonal structure was a challenge for experimentalists. A different type of self-organization in smectic films was found and used to form the hexagonal structure. Methods applied for building the hexagonal phase can be used for the formation of complicated liquid-crystal structures.

  13. Methods of producing continuous boron carbide fibers

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, John E.; Griffith, George W.

    2015-12-01

    Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

  14. Averaging anisotropic cosmologies

    CERN Document Server

    Barrow, J D; Barrow, John D.; Tsagas, Christos G.

    2006-01-01

    We examine the effects of spatial inhomogeneities on irrotational anisotropic cosmologies by looking at the average properties of pressure-free Bianchi-type models. Adopting the Buchert averaging scheme, we identify the kinematic backreaction effects by focussing on spacetimes with zero or isotropic spatial curvature. This allows us to close the system of the standard scalar formulae with a propagation equation for the shear magnitude. We find no change in the already known conditions for accelerated expansion. The backreaction terms are expressed as algebraic relations between the mean-square fluctuations of the models' irreducible kinematical variables. Based on these we investigate the early evolution of averaged vacuum Bianchi type $I$ universes and those filled with pressureless matter. In the latter case we show that the backreaction effects can modify the familiar Kasner-like singularity and potentially remove Mixmaster-type oscillations. We also discuss the possibility of accelerated expansion due to ...

  15. Thermodynamics of anisotropic branes

    CERN Document Server

    Ávila, Daniel; Patiño, Leonardo; Trancanelli, Diego

    2016-01-01

    We study the thermodynamics of flavor D7-branes embedded in an anisotropic black brane solution of type IIB supergravity. The flavor branes undergo a phase transition between a `Minkowski embedding', in which they lie outside of the horizon, and a `black hole embedding', in which they fall into the horizon. This transition depends on two independent dimensionless ratios, which are formed out of the black hole temperature, its anisotropy parameter, and the mass of the flavor degrees of freedom. It happens either at a critical temperature or at a critical anisotropy. A general lesson we learn from this analysis is that the anisotropy, in this particular realization, induces similar effects as the temperature. In particular, increasing the anisotropy bends the branes more and more into the horizon. Moreover, we observe that the transition becomes smoother for higher anisotropies.

  16. Chain hexagonal cacti with the extremal eccentric distance sum.

    Science.gov (United States)

    Qu, Hui; Yu, Guihai

    2014-01-01

    Eccentric distance sum (EDS), which can predict biological and physical properties, is a topological index based on the eccentricity of a graph. In this paper we characterize the chain hexagonal cactus with the minimal and the maximal eccentric distance sum among all chain hexagonal cacti of length n, respectively. Moreover, we present exact formulas for EDS of two types of hexagonal cacti. PMID:24741365

  17. Phase transitions to 120 GPa for shock-compressed pyrolytic and hot-pressed boron nitride

    International Nuclear Information System (INIS)

    Shock-compression characteristics of two types of hexagonal graphitelike boron nitride have been investigated. Highly oriented very pure pyrolytic boron nitride exhibits shock-velocity versus particle-velocity discontinuities that appear to be manifestations of the initiation of a sluggish phase transition. This transition begins at 20 GPa and is driven to completion (melting) at 75 GPa. Discontinuities in the plot for impure hot-pressed boron nitride indicate initiation at 10 GPa and completion at 20 GPa. The (U/sub s/, U/sub p/) plots follow essentially the same paths for 4.0 < U/sub p/ < 5.2 km/sec. No evidence for a transition to a metalliclike state was seen. Temperature calculations indicate that the material is liquid above approx.80 GPa

  18. Effect of boron doping on optical properties of sol–gel based nanostructured zinc oxide films on glass

    International Nuclear Information System (INIS)

    Graphical abstract: Room temperature fine structured UV–vis PL emissions (a) as phonon replicas in 1 at.% boron doped film originated from LO phonon evidenced from Near Grazing Incidence Angle (NGIA) IR spectral study (b). Highlights: ► Sol–gel based boron doped nanostructured ZnO thin films deposited on pure silica glass using crystalline boric acid as boron source. ► Observed first time, room temperature fine structured PL emissions in 1 at.% doped film as phonon replicas originated from LO phonon (both IR and Raman active). ► Boron doping controls the LO phonon energy in addition to visible reflection, band gap and grain size. ► The films possessed mixed crystal phases with hexagonal as major phase. -- Abstract: Boron doped zinc oxide thin films (∼80 nm) were deposited onto pure silica glass by sol–gel dip coating technique from the precursor sol/solution of 4.0 wt.% equivalent oxide content. The boron concentration was varied from 0 to 2 at.% w.r.t. Zn using crystalline boric acid. The nanostructured feature of the films was visualized by FESEM images and the largest cluster size of ZnO was found in 1 at.% boron doped film (B1ZO). The presence of mixed crystal phases with hexagonal as major phase was identified from XRD reflections of the films. Particle size, optical band gap, visible specular reflection, room temperature photoluminescence (PL) emissions (3.24–2.28 eV), infra-red (IR) and Raman active longitudinal optical (LO) phonon vibration were found to be dependent on dopant concentration. For the first time, we report the room temperature fine structured PL emissions as phonon replicas originated from the LO phonon (both IR and Raman active) in 1 at.% boron doped zinc oxide film.

  19. Anisotropic Inflation with General Potentials

    CERN Document Server

    Shi, Jiaming; Qiu, Taotao

    2015-01-01

    Anomalies in recent observational data indicate that there might be some "anisotropic hair" generated in an inflation period. To obtain general information about the effects of this anisotropic hair to inflation models, we studied anisotropic inflation models that involve one vector and one scalar using several types of potentials. We determined the general relationship between the degree of anisotropy and the fraction of the vector and scalar fields, and concluded that the anisotropies behave independently of the potentials. We also generalized our study to the case of multi-directional anisotropies.

  20. On geometric delusions of hexagonal structures

    OpenAIRE

    Khan, M. J. I.; Babar, S.

    2014-01-01

    The confining geometries of fermions in 2D structures exhibits interesting results that have highest symmetry. Delusion can be considered as the topological effect which is topological invariant. Topologically, genus zero surfaces needs excess of pentagons while in surfaces g>2 surfaces needs excess of heptagons. The curvature effect and the rise of effective gauge field can be interpreted from delusion effects in hexagonal lattice. This idea is novel in its scope as it can state theoretical ...

  1. Layered graphene structure of a hexagonal carbon

    International Nuclear Information System (INIS)

    Experiments show that there is a novel hexagonal carbon polymorph restricted to the space group of P-62c, but the detailed atomic structure is not determined. Here we set carbon atoms occupying P-62c 4f or P-62c 2c and 2d Wyckoff positions, and calculate the total energy of the different cell structures changing the internal parameter by first-principles calculations, which demonstrates that the stable structures in energy (at local minima) are hexagonal carbon (P-62c 2c and 2d) and hexagonal diamond (P-62c 4f, z=1/16). The calculated bulk modulus 437±16 GPa and interlayer distance 2.062 Å of the layered graphene structure P-62c 2c and 2d are in good agreement with those of the proposed new carbon, which indicates that P-62c 2c and 2d is a possible precursor or intermediate hard phase during the structural transformation of carbon

  2. Study the gas sensing properties of boron nitride nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Sajjad, Muhammad; Feng, Peter, E-mail: p.feng@upr.edu

    2014-01-01

    Graphical abstract: - Highlights: • We synthesized boron nitride nanosheets (BNNSs) on silicon substrate. • We analyzed gas sensing properties of BNNSs-based gas-sensor device. • CH{sub 4} gas is used to measure gas-sensing properties of the device. • Quick response and recovery time of the device is recorded. • BNNSs showed excellent sensitivity to the working gas. - Abstract: In the present communication, we report on the synthesis of boron nitride nanosheets (BNNSs) and study of their gas sensing properties. BNNSs are synthesized by irradiating pyrolytic hexagonal boron nitride (h-BN) target using CO{sub 2} laser pulses. High resolution transmission electron microscopic measurements (HRTEM) revealed 2-dientional honeycomb crystal lattice structure of BNNSs. HRTEM, electron diffraction, XRD and Raman scattering measurements clearly identified h-BN. Gas sensing properties of synthesized BNNSs were analyzed with prototype gas sensor using methane as working gas. A systematic response curve of the sensor is recorded in each cycle of gas “in” and “out”; suggesting excellent sensitivity and high performance of BNNSs-based gas-sensor.

  3. Sintered boron, production and properties

    International Nuclear Information System (INIS)

    Microhardness HV, tensile properties and Young modulus of sintered boron of different porosity were studied. It was shown that with density growth tensile properties improve. HV and brittle-ductile transition temperature Tsub(b) of sintered boron on the one hand and for silicon and titanium carbide on the other were compared and discussed. It was noted that the general level of HV and Tsub(b) for boron is rather high and at similar relative temperatures these characteristics are much higher. Temperature dependences of linear expansion coefficient, thermal capacity, thermal and temperature conductivity of sintered boron of 20% porosity were studied. Gruneisen parameter was evaluated

  4. Fivefold twinned boron carbide nanowires.

    Science.gov (United States)

    Fu, Xin; Jiang, Jun; Liu, Chao; Yuan, Jun

    2009-09-01

    Chemical composition and crystal structure of fivefold twinned boron carbide nanowires have been determined by electron energy-loss spectroscopy and electron diffraction. The fivefold cyclic twinning relationship is confirmed by systematic axial rotation electron diffraction. Detailed chemical analysis reveals a carbon-rich boron carbide phase. Such boron carbide nanowires are potentially interesting because of their intrinsic hardness and high temperature thermoelectric property. Together with other boron-rich compounds, they may form a set of multiply twinned nanowire systems where the misfit strain could be continuously tuned to influence their mechanical properties. PMID:19687534

  5. Gradient expansion for anisotropic hydrodynamics

    CERN Document Server

    Florkowski, Wojciech; Spaliński, Michał

    2016-01-01

    We compute the gradient expansion for anisotropic hydrodynamics. The results are compared with the corresponding expansion of the underlying kinetic-theory model with the collision term treated in the relaxation time approximation. We find that a recent formulation of anisotropic hydrodynamics based on an anisotropic matching principle yields the first three terms of the gradient expansion in agreement with those obtained for the kinetic theory. This gives further support for this particular hydrodynamic model as a good approximation of the kinetic-theory approach. We further find that the gradient expansion of anisotropic hydrodynamics is an asymptotic series, and the singularities of the analytic continuation of its Borel transform indicate the presence of non-hydrodynamic modes.

  6. Photon states in anisotropic media

    Indian Academy of Sciences (India)

    Deepak Kumar

    2002-08-01

    Quantum aspects of optical polarization are discussed for waves traveling in anisotropic dielectric media with a view to relate the dynamics of polarization with that of photon spin and its manipulation by classical polarizers.

  7. Atomistic simulations of pristine and defective hexagonal BN and SiC sheets under uniaxial tension

    Energy Technology Data Exchange (ETDEWEB)

    Le, Minh-Quy, E-mail: quy.leminh@hust.edu.vn [Department of Mechanics of Materials and Structures, School of Mechanical Engineering, Hanoi University of Science and Technology, No. 1, Dai Co Viet Road, Hanoi (Viet Nam); International Institute for Computational Science and Engineering, Hanoi University of Science and Technology, No. 1, Dai Co Viet Road, Hanoi (Viet Nam); Nguyen, Danh-Truong [Department of Mechanics of Materials and Structures, School of Mechanical Engineering, Hanoi University of Science and Technology, No. 1, Dai Co Viet Road, Hanoi (Viet Nam)

    2014-10-06

    The uniaxial tensile mechanical properties of pristine and defective hexagonal boron nitride (BN) and silicon carbide (SiC) sheets are investigated through a molecular dynamics finite element method with Tersoff and Tersoff-like potentials. 2-Atom vacancy and 2 types of Stone–Wales defects are considered. It is found that uniaxial tensile stress–strain curves of defective and pristine sheets are almost identical up to fracture points. A centered single defect reduces significantly fracture stress and fracture strain from those of the corresponding pristine sheet. In contrast, Young's modulus is nearly unchanged by a single defect. One 2-atom vacancy in the sheet's center reduces 15–18% and 16–25% in fracture stress, and 32–34% and 32–48% in fracture strain of BN and SiC sheets, respectively. Reduction in fracture properties depends on the tensile direction as well as the orientation of Stone–Wales defects.

  8. Application of Anisotropic Texture Components

    OpenAIRE

    Eschner, Th.; Fundenberger, J.-J.

    1997-01-01

    The description of textures in terms of texture components is an established conception in quantitative texture analysis. Recent developments lead to the representation of orientation distribution functions as a weighted sum of model functions, each corresponding to one anisotropic texture component. As was shown previously, an adequate texture description is possible with only a very small number of anisotropic texture components. As a result, textures and texture changes can be described by...

  9. Hexagonal boron nitride luminescence dependent on vacuum level and surrounding gases

    Energy Technology Data Exchange (ETDEWEB)

    Korsaks, V., E-mail: vkorsaks@cfi.lu.lv

    2015-10-15

    Highlights: • 400 nm Luminescence of hBN powder is sensitive to surrounding vacuum or oxygen gas. • Decrease of hBN powder grain size improves its oxygen sensing properties. • hBN powder is proposed as prospective material for oxygen gas sensors. - Abstract: Gas sensing properties of hBN powder bulk and nanosize were studied. It was demonstrated that for hBN powders with grain sizes of 70 nm, 1 μm and 5 μm the native defect-induced luminescence observed at 400 nm under 265 nm light excitation and room temperature is sensitive to oxygen gas reducing luminescence intensity. The highest value of luminescence intensity is reached when sample is in vacuum. Results obtained allow conclusion that the hBN powder is prospective for sensing of oxygen gas. Some material properties such as dependence of luminescence intensity on vacuum level and pumping time, ratio of luminescence intensity when sample is in vacuum and gas, its dependence on material grain size were studied.

  10. CVD growth of graphene under exfoliated hexagonal boron nitride for vertical hybrid structures

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Min [SKKU Advanced Institute of Nanotechnology (SAINT) (Korea, Republic of); Center for Human Interface Nanotechnology (HINT) (Korea, Republic of); Jang, Sung Kyu [SKKU Advanced Institute of Nanotechnology (SAINT) (Korea, Republic of); Song, Young Jae [SKKU Advanced Institute of Nanotechnology (SAINT) (Korea, Republic of); Department of Physics, Sungkyunkwan University (SKKU), Suwon 440-746 (Korea, Republic of); Lee, Sungjoo, E-mail: leesj@skku.edu [SKKU Advanced Institute of Nanotechnology (SAINT) (Korea, Republic of); Center for Human Interface Nanotechnology (HINT) (Korea, Republic of); College of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon 440-746 (Korea, Republic of)

    2015-01-15

    Graphical abstract: We have demonstrated a novel yet simple method for fabricating graphene-based vertical hybrid structures by performing the CVD growth of graphene at an h-BN/Cu interface. Our systematic Raman measurements combined with plasma etching process indicate that a graphene film is grown under exfoliated h-BN rather than on its top surface, and that an h-BN/graphene vertical hybrid structure has been fabricated. Electrical transport measurements of this h-BN/graphene, transferred on SiO2, show the carrier mobility up to approximately 2250 cm{sup 2} V{sup −1} s{sup −1}. The developed method would enable the exploration of the possibility of novel hybrid structure integration with two-dimensional material systems. - Abstract: We have demonstrated a novel yet simple method for fabricating graphene-based vertical hybrid structures by performing the CVD growth of graphene at an h-BN/Cu interface. Our systematic Raman measurements combined with plasma etching process indicate that a graphene film is grown under exfoliated h-BN rather than on its top surface, and that an h-BN/graphene vertical hybrid structure has been fabricated. Electrical transport measurements of this h-BN/graphene, transferred on SiO{sub 2}, show the carrier mobility up to approximately 2250 cm{sup 2} V{sup −1} s{sup −1}. The developed method would enable the exploration of the possibility of novel hybrid structure integration with two-dimensional material systems.

  11. Mechanical properties and failure behaviors of the interface of hybrid graphene/hexagonal boron nitride sheets.

    Science.gov (United States)

    Ding, Ning; Chen, Xiangfeng; Wu, Chi-Man Lawrence

    2016-01-01

    Hybrid graphene/h-BN sheet has been fabricated recently and verified to possess unusual physical properties. During the growth process, defects such as vacancies are unavoidably present at the interface between graphene and h-BN. In the present work, typical vacancy defects, which were located at the interface between graphene and h-BN, were studied by density functional theory. The interface structure, mechanical and electronic properties, and failure behavior of the hybrid graphene/h-BN sheet were investigated and compared. The results showed that the formation energy of the defective graphene/h-BN interface basically increased with increasing inflection angles. However, Young's modulus for all graphene/h-BN systems studied decreased with the increase in inflection angles. The intrinsic strength of the hybrid graphene/h-BN sheets was affected not only by the inflection angles, but also by the type of interface connection and the type of defects. The energy band structure of the hybrid interface could be tuned by applying mechanical strain to the systems. These results demonstrated that vacancies introduced significant effects on the mechanical and electronic properties of the hybrid graphene/h-BN sheet. PMID:27527371

  12. Oxidative Etching of Hexagonal Boron Nitride Toward Nanosheets with Defined Edges and Holes

    OpenAIRE

    Yunlong Liao; Kaixiong Tu; Xiaogang Han; Liangbing Hu; Connell, John W.; Zhongfang Chen; Yi Lin

    2015-01-01

    Lateral surface etching of two-dimensional (2D) nanosheets results in holey 2D nanosheets that have abundant edge atoms. Recent reports on holey graphene showed that holey 2D nanosheets can outperform their intact counterparts in many potential applications such as energy storage, catalysis, sensing, transistors, and molecular transport/separation. From both fundamental and application perspectives, it is desirable to obtain holey 2D nanosheets with defined hole morphology and hole edge struc...

  13. Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

    OpenAIRE

    Gaskell, J.; Eaves, L.; Novoselov, K. S.; Mishchenko, A.; Geim, A. K.; Fromhold, T. M.; Greenaway, M. T.

    2015-01-01

    We assess the potential of two-terminal graphene-hBN-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit i...

  14. CVD growth of graphene under exfoliated hexagonal boron nitride for vertical hybrid structures

    International Nuclear Information System (INIS)

    Graphical abstract: We have demonstrated a novel yet simple method for fabricating graphene-based vertical hybrid structures by performing the CVD growth of graphene at an h-BN/Cu interface. Our systematic Raman measurements combined with plasma etching process indicate that a graphene film is grown under exfoliated h-BN rather than on its top surface, and that an h-BN/graphene vertical hybrid structure has been fabricated. Electrical transport measurements of this h-BN/graphene, transferred on SiO2, show the carrier mobility up to approximately 2250 cm2 V−1 s−1. The developed method would enable the exploration of the possibility of novel hybrid structure integration with two-dimensional material systems. - Abstract: We have demonstrated a novel yet simple method for fabricating graphene-based vertical hybrid structures by performing the CVD growth of graphene at an h-BN/Cu interface. Our systematic Raman measurements combined with plasma etching process indicate that a graphene film is grown under exfoliated h-BN rather than on its top surface, and that an h-BN/graphene vertical hybrid structure has been fabricated. Electrical transport measurements of this h-BN/graphene, transferred on SiO2, show the carrier mobility up to approximately 2250 cm2 V−1 s−1. The developed method would enable the exploration of the possibility of novel hybrid structure integration with two-dimensional material systems

  15. Simulation of single-electron state density for one-wall nanotubes from carbon and boron nitride

    International Nuclear Information System (INIS)

    The single-electron density is calculated for all possible geometrical configurations of the one-wall nanotubes from carbon and boron nitride. The calculation is accomplished through the numerical differentiation of the two-dimensional dispersion ratios for the graphite and hexagonal boron nitride by all permitted values of the wave vector. The π-electron approximation was applied. Good agreement of the energy gaps between the symmetrical singularities in the density of the single-electron states and experimental data obtained through the method of the resonance combination light scattering is demonstrated by the example of the concrete carbon nanotubes

  16. Anisotropic diffusion limited aggregation in three dimensions: Universality and nonuniversality

    Science.gov (United States)

    Goold, Nicholas R.; Somfai, Ellák; Ball, Robin C.

    2005-09-01

    We explore the macroscopic consequences of lattice anisotropy for diffusion limited aggregation (DLA) in three dimensions. Simple cubic and bcc lattice growths are shown to approach universal asymptotic states in a coherent fashion, and the approach is accelerated by the use of noise reduction. These states are strikingly anisotropic dendrites with a rich hierarchy of structure. For growth on an fcc lattice, our data suggest at least two stable fixed points of anisotropy, one matching the bcc case. Hexagonal growths, favoring six planar and two polar directions, appear to approach a line of asymptotic states with continuously tunable polar anisotropy. The more planar of these growths visually resembles real snowflake morphologies. Our simulations use a new and dimension-independent implementation of the DLA model. The algorithm maintains a hierarchy of sphere coverings of the growth, supporting efficient random walks onto the growth by spherical moves. Anisotropy was introduced by restricting growth to certain preferred directions.

  17. First-principles calculations on double-walled inorganic nanotubes with hexagonal chiralities

    Energy Technology Data Exchange (ETDEWEB)

    Zhukovskii, Yuri F [Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063, Riga (Latvia); Evarestov, Robert A; Bandura, Andrei V; Losev, Maxim V, E-mail: quantzh@latnet.lv [Department of Quantum Chemistry, St. Petersburg State University, 26 Universitetsky Ave., 198504, Petrodvorets (Russian Federation)

    2011-06-23

    The two sets of commensurate double-walled boron nitride and titania hexagonally-structured nanotubes (DW BN and TiO{sub 2} NTs) possessing either armchair- or zigzag-type chiralities have been considered, i.e., (n{sub 1},n{sub 1})-(n{sub 2},n{sub 2}) or (n{sub 1},0)-(n{sub 2},0), respectively. For symmetry analysis of these nanotubes, the line symmetry groups for one-periodic (1D) nanostructures with rotohelical symmetry have been applied. To analyze the structural and electronic properties of hexagonal DW NTs, a series of large-scale ab initio DFT-LCAO calculations have been performed using the hybrid Hartree-Fock/Kohn-Sham exchange-correlation functional PBE0 (as implemented in CRYSTAL-09 code). To establish the optimal inter-shell distances within DW NTs corresponding to the minima of calculated total energy, the chiral indices n{sub 1} and n{sub 2} of the constituent single-walled (SW) nanotubes have been successively varied.

  18. Redetermination of the hexagonal struvite analogue Cs[Mg(OH26](PO4

    Directory of Open Access Journals (Sweden)

    Matthias Weil

    2008-08-01

    Full Text Available The structure of the hexagonal modification of caesium hexaaquamagnesium phosphate has been redetermined from single-crystal X-ray data. The previous refinement from photographic data [Ferrari, Calvaca & Nardelli (1955. Gazz. Chim. Ital. 85, 1232–1238] was basically confirmed, but with all H atoms located and with all non H-atoms refined with anisotropic displacement parameters. The structure can be derived from the NiAs structure type: the PO4 tetrahedra (3m. symmetry are on the Ni positions and the complex [Mg(OH26] octahedra (3m. symmetry are on the As positions. The building units are connected to each other by hydrogen bonds. The Cs+ cations (3m. symmetry are located in the voids of this arrangement and exhibit a distorted cuboctahedral 12-coordination by the O atoms of the water molecules.

  19. Theory of paramagnetic singlet-doublet excitations in double-hexagonal close-packed praseodymium

    International Nuclear Information System (INIS)

    The magnetic excitation spectrum of the singlet-doublet magnet double-hexagonal close-packed praseodymium, which has been measured by means of inelastic neutron scattering, is analyzed using a diagrammatic high-density expansion technique. The lowest-order random-phase-approximation diagrams give a detailed description of the wave-vector and temperature dependence of the four modes in terms of a Hamiltonian including isotropic Heisenberg interatomic exchange interactions and anisotropic, dipolar-like exchange interactions. In general, the modes are linearly or elliptically polarized. The leading contributions to the line shapes of the excitations are obtained by extending the 1/Z expansion of the generalized susceptibility propagators one order beyond the random-phase approximation. This damping corresponds to spin-wave scattering on single-site fluctuations. The propagators are calculated self-consistently by including internally renormalized Green's functions. The theoretical spectral functions are in detailed agreement with experiment

  20. Quasiparticles near domain walls in hexagonal superconductors

    Science.gov (United States)

    Mukherjee, S. P.; Samokhin, K. V.

    2016-02-01

    We calculate the energy spectrum of quasiparticles trapped by a domain wall separating different time-reversal symmetry-breaking ground states in a hexagonal superconductor, such as UPt3. The bound-state energy is found to be strongly dependent on the gap symmetry, the domain-wall orientation, the quasiparticle's direction of semiclassical propagation, and the phase difference between the domains. We calculate the corresponding density of states and show how one can use its prominent features, in particular, the zero-energy singularity, to distinguish between different pairing symmetries.

  1. Hydrogen adsorption on hexagonal silicon nanotubes

    OpenAIRE

    Ryou, Junga; Hong, Suklyun; Kim, Gunn

    2009-01-01

    We present a first-principles study of geometrical structure and energetics of hydrogen adsorbed on hexagonal single-walled silicon nanotubes (SiNTs). The adsorption behaviors of hydrogen molecules in SiNTs are investigated. The binding energies for the most stable physisorbed configurations are calculated to be less than 0.1 eV. The energy barriers are also investigated for dissociation of H2 molecules. Finally, we consider encapsulation of H2 molecules in SiNTs. The possibility of SiNTs as ...

  2. Diagonal form factors and hexagon form factors

    CERN Document Server

    Jiang, Yunfeng

    2015-01-01

    We study the heavy-heavy-light (HHL) three-point functions in the planar N = 4 super-Yang- Mills theory using the recently proposed hexagon bootstrap program [arXiv:1505.06745]. We prove the conjecture of Bajnok, Janik and Wereszczynski [arXiv:1404.4556] on the polynomial L-dependence of HHL structure constant up to the leading finite-size corrections, where L is the length of the heavy operators. The proof is presented for a specific set-up but the method can be applied to more general situations.

  3. Boron: do we know the ground state structure?

    Science.gov (United States)

    Ogitsu, Tadashi

    2006-03-01

    Boron is only the fifth element in the periodic table, having a simple electronic configuration, yet, it is known to form one of the most complicated crystal structures, β-rhombohedral structure. Up to date, the best estimate on the number of atoms in its hexagonal unit cell is 320.1, not even an integer number. The key concept to understand its complexity is covalency and electron deficiency: It does not have enough valence electrons to form a simple covalent crystal, like carbon or silicon. Instead it forms a complicated packing of icosahedrons. The structural model of β-boron was developed in the 1960s based on X-ray experiment. Although this model structure captures the most of the structural characteristics of β-boron, it has a crucial pitfall; the number of atoms per cell estimated by X-ray experiment does not agree with the number of atoms estimated by the pycnometric density. In 1988, Slack et al. discovered four more POS, by which the discrepancy in the number of atoms is reconciled [J. of Solid State Chem. 76, 52 (1988)]. There still remains an unanswered question; how are these POS atoms configured? Is it completely random? Or there is some kind of order as it has been suggested in Slack’s paper? A major challenge here is the astronomical number of possible configurations, roughly 150 million even for the irreducible cell. We tackle this problem using ab-initio simulated annealing coupled with a Lattice Model Monte Carlo simulated annealing. Our results reveal that the stable structure, indeed, has a certain type of correlation in its POS configuration. More detail on the structural property and its impact on electronic property of β-boron will be discussed at the presentation. This work was performed under the auspices of the U.S. Dept. of Energy at the University of California/ LLNL under contract no. W-7405-Eng-48.

  4. Boron thermal regeneration system

    International Nuclear Information System (INIS)

    An ion exchanger which allows flow in both directions along a selected flow path is described. A separator plate divides the exchanger tank into two chambers each of which has a flow conduit so that flow may enter or leave from either chamber while prohibiting the resin particles from migrating from one side of the tank to the other. This ion exchanger permits a dual-directional flow process to be practised which results in immediate changes in the boron concentration within a nuclear reactor coolant system even if the ion exchanger resins have not been completely equilibrated during a previous operation. (author)

  5. BORONIZING OF STEEL

    Directory of Open Access Journals (Sweden)

    Arzum ULUKÖY

    2006-02-01

    Full Text Available Boride layer has many advantages in comparison with traditional hardening methods. The boride layer has high hardening value and keeps it's hardeness at high temperatures, and it also shows favorible properties, such as the resistance to wear, oxidation and corrosion. The process can be applied at variety of materials, for instance steel, cast iron, cast steel, nickel and cobalt alloys and cermets. In this rewiew, boronizing process properties, boride layer on steel surfaces and specifications and the factors that effect boride layer are examined

  6. Ultrasensitive gas detection of large-area boron-doped graphene

    Science.gov (United States)

    Lv, Ruitao; Chen, Gugang; Li, Qing; McCreary, Amber; Botello-Méndez, Andrés; Morozov, S. V.; Declerck, Xavier; Perea-López, Nestor; Cullen, David A.; Feng, Simin; Elías, Ana Laura; Cruz-Silva, Rodolfo; Fujisawa, Kazunori; Endo, Morinobu; Kang, Feiyu; Charlier, Jean-Christophe; Meunier, Vincent; Pan, Minghu; Harutyunyan, Avetik R.; Novoselov, Konstantin S.; Terrones, Mauricio

    2015-01-01

    Heteroatom doping is an efficient way to modify the chemical and electronic properties of graphene. In particular, boron doping is expected to induce a p-type (boron)-conducting behavior to pristine (nondoped) graphene, which could lead to diverse applications. However, the experimental progress on atomic scale visualization and sensing properties of large-area boron-doped graphene (BG) sheets is still very scarce. This work describes the controlled growth of centimeter size, high-crystallinity BG sheets. Scanning tunneling microscopy and spectroscopy are used to visualize the atomic structure and the local density of states around boron dopants. It is confirmed that BG behaves as a p-type conductor and a unique croissant-like feature is frequently observed within the BG lattice, which is caused by the presence of boron-carbon trimers embedded within the hexagonal lattice. More interestingly, it is demonstrated for the first time that BG exhibits unique sensing capabilities when detecting toxic gases, such as NO2 and NH3, being able to detect extremely low concentrations (e.g., parts per trillion, parts per billion). This work envisions that other attractive applications could now be explored based on as-synthesized BG. PMID:26575621

  7. The prospects of using boron nitride in nuclear reactors as an absorbant and decelerator of neutrons

    International Nuclear Information System (INIS)

    Full text: The given work tells us that there are a widespread materials having an ability of amorphism, magnezation, hightemperature stability, wear resistance and corrosion resisting. To special requests which being presented to modern materials by some spheres of science and technics concern an ability of materials to work not only within the conditions of radioactive irradiation nor also capture heating neutrons. Hexagonal boron nitride has the most of these features. Boron nitride is used by the aircraft industry, because of its hightemperature resistance for a long time in extreme conditions. That is why the given material had been suggested as a neutron immerse material during production of containers for radioactive wastes long-lived storage. Using of enriched boron nitride in the first wall of thermonuclear reactor gives an oppotunity of refining nuclear and physical characteristics of reactor installation as a whole. Boron nitride has feeble activation in reactor neutron shell and high radiation resistance. All abovementioned boron nitride features, also its lower atmoic weight are very important for application in plasma devices, such as for using in installations of thermonuclear synthesis.

  8. Bonding distances as Exact Sums of the Radii of the Constituent Atoms in Nanomaterials - Boron Nitride and Coronene

    OpenAIRE

    Heyrovska, Raji

    2010-01-01

    This paper presents for the first time the exact structures at the atomic level of two important nanomaterials, boron nitride and coronene. Both these compounds are hexagonal layer structures similar to graphene in two dimensions and to graphite in three-dimensions. However, they have very different properties: whereas graphene is a conductor, h-BN is an electrical insulator and coronene is a polycyclic aromatic hydrocarbon of cosmological interest. The atomic structures presented here for bo...

  9. Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors.

    Science.gov (United States)

    Zou, Xuming; Huang, Chun-Wei; Wang, Lifeng; Yin, Long-Jing; Li, Wenqing; Wang, Jingli; Wu, Bin; Liu, Yunqi; Yao, Qian; Jiang, Changzhong; Wu, Wen-Wei; He, Lin; Chen, Shanshan; Ho, Johnny C; Liao, Lei

    2016-03-01

    A unique design of a hexagonal boron nitride (h-BN)/HfO2 dielectric heterostructure stack is demonstrated, with few-layer h-BN to alleviate the surface optical phonon scattering, followed by high-κ HfO2 deposition to suppress Coulombic impurity scattering so that high-performance top-gated two-dimensional semiconductor transistors are achieved. Furthermore, this dielectric stack can also be extended to GaN-based transistors to enhance their performance. PMID:26762171

  10. Reply to Comment on ‘Molecular structure-dependent deformations in boron nitride nanostructures subject to an electrical field’

    Science.gov (United States)

    Zhang, Jin; Wang, Chengyuan; Adhikari, Sondipon

    2016-03-01

    A large scattering of effective atomic charge distribution was found in the literature for hexagonal boron nitride nanostructures (BNNSs). In our paper (Zhang J, Wang C Y and Sondipon A 2013 J. Phys. D: Appl. Phys. 46 235303) ‘±3e’ was chosen as a rough approximation for the effective atomic charge in BNNSs as it gave the piezoelectric coefficient of BNNSs close to the values in the literature.

  11. Synthesis and structure of large single crystalline silver hexagonal microplates suitable for micromachining

    International Nuclear Information System (INIS)

    We report a simple one-step synthesis method of large single crystalline Ag (111) hexagonal microplates with sharp edges and a size of up to tens of microns. Single silver crystals were produced by reduction silver nitrate aqueous solution with 4-(methylamino)phenol sulfate. Scanning and transmission electron microscopy, energy-dispersive X-ray spectroscopy, selected area electron diffraction and optical microscopy techniques were combined to characterize the crystals. It is shown that the microplates can be easily dispersed and transferred as single objects onto different substrates and subsequently used as a high quality plasmonic starting material for micromachining of future nanocomponents, using modern top-down techniques like focused-ion beam milling and gas injection deposition. - Highlights: • Synthesis of large Ag hexagonal microplates with high crystallinity. • It is shown and discussed the role of twinning for the anisotropic 2D growth. • The Ag plates are stable in water and can be dispersed onto different substrates. • Their positioning and subsequent micromachining with FIB/GIS is demonstrated. • Suitable starting material for future plasmonic nanocomponents

  12. Synthesis and structure of large single crystalline silver hexagonal microplates suitable for micromachining

    Energy Technology Data Exchange (ETDEWEB)

    Lyutov, Dimitar L.; Genkov, Kaloyan V.; Zyapkov, Anton D.; Tsutsumanova, Gichka G.; Tzonev, Atanas N. [Department of Solid State Physics and Microelectronics, Faculty of Physics, University of Sofia, 5, J. Bouchier Blvd, Sofia (Bulgaria); Lyutov, Lyudmil G. [Department of General and Inorganic Chemistry, Faculty of Chemistry, University of Sofia, 1, J. Bouchier Blvd, Sofia (Bulgaria); Russev, Stoyan C., E-mail: scr@phys.uni-sofia.bg [Department of Solid State Physics and Microelectronics, Faculty of Physics, University of Sofia, 5, J. Bouchier Blvd, Sofia (Bulgaria)

    2014-01-15

    We report a simple one-step synthesis method of large single crystalline Ag (111) hexagonal microplates with sharp edges and a size of up to tens of microns. Single silver crystals were produced by reduction silver nitrate aqueous solution with 4-(methylamino)phenol sulfate. Scanning and transmission electron microscopy, energy-dispersive X-ray spectroscopy, selected area electron diffraction and optical microscopy techniques were combined to characterize the crystals. It is shown that the microplates can be easily dispersed and transferred as single objects onto different substrates and subsequently used as a high quality plasmonic starting material for micromachining of future nanocomponents, using modern top-down techniques like focused-ion beam milling and gas injection deposition. - Highlights: • Synthesis of large Ag hexagonal microplates with high crystallinity. • It is shown and discussed the role of twinning for the anisotropic 2D growth. • The Ag plates are stable in water and can be dispersed onto different substrates. • Their positioning and subsequent micromachining with FIB/GIS is demonstrated. • Suitable starting material for future plasmonic nanocomponents.

  13. Aqueous compatible boron nitride nanosheets for high-performance hydrogels

    Science.gov (United States)

    Hu, Xiaozhen; Liu, Jiahui; He, Qiuju; Meng, Yuan; Cao, Liu; Sun, Ya-Ping; Chen, Jijie; Lu, Fushen

    2016-02-01

    Hexagonal boron nitride nanosheets (BNNSs) possess ultimate thermal and chemical stabilities and mechanical strengths. However, the unmodified BNNSs are hydrophobic and insoluble in water, which hinders their use in many technological areas requiring aqueous compatibility. In this work, h-BN was treated with molten citric acid to produce aqueous dispersible boron nitride sheets (ca-BNNSs). The resultant ca-BNNSs were used to fabricate ca-BNNS/polyacrylamide (i.e., BNNS2.5/PAAm) nanocomposite hydrogels, targeting high water retentivity and flexibility. The BNNS2.5/PAAm hydrogel (initially swollen in water) largely remained swollen (water content ~94 wt%) even after one-year storage under ambient conditions. Importantly, the swollen BNNS2.5/PAAm hydrogel (water content ~95 wt%) was highly flexible. Its elongation and compressive strength exceeded 10 000% and 8 MPa at 97% strain, respectively. Moreover, the aforementioned hydrogel recovered upon the removal of compression force, without obvious damage. The substantially improved water retentivity and flexibility revealed that BNNSs can serve as a promising new platform in the development of high-performance hydrogels.Hexagonal boron nitride nanosheets (BNNSs) possess ultimate thermal and chemical stabilities and mechanical strengths. However, the unmodified BNNSs are hydrophobic and insoluble in water, which hinders their use in many technological areas requiring aqueous compatibility. In this work, h-BN was treated with molten citric acid to produce aqueous dispersible boron nitride sheets (ca-BNNSs). The resultant ca-BNNSs were used to fabricate ca-BNNS/polyacrylamide (i.e., BNNS2.5/PAAm) nanocomposite hydrogels, targeting high water retentivity and flexibility. The BNNS2.5/PAAm hydrogel (initially swollen in water) largely remained swollen (water content ~94 wt%) even after one-year storage under ambient conditions. Importantly, the swollen BNNS2.5/PAAm hydrogel (water content ~95 wt%) was highly flexible. Its

  14. Continuum mechanics of anisotropic materials

    CERN Document Server

    Cowin, Stephen C

    2013-01-01

    Continuum Mechanics of Anisotropic Materials(CMAM) presents an entirely new and unique development of material anisotropy in the context of an appropriate selection and organization of continuum mechanics topics. These features will distinguish this continuum mechanics book from other books on this subject. Textbooks on continuum mechanics are widely employed in engineering education, however, none of them deal specifically with anisotropy in materials. For the audience of Biomedical, Chemical and Civil Engineering students, these materials will be dealt with more frequently and greater accuracy in their analysis will be desired. Continuum Mechanics of Anisotropic Materials' author has been a leader in the field of developing new approaches for the understanding of anisotropic materials.

  15. Superlens from complementary anisotropic metamaterials

    Science.gov (United States)

    Li, G. X.; Tam, H. L.; Wang, F. Y.; Cheah, K. W.

    2007-12-01

    Metamaterials with isotropic property have been shown to possess novel optical properties such as a negative refractive index that can be used to design a superlens. Recently, it was shown that metamaterials with anisotropic property can translate the high-frequency wave vector k values from evanescence to propagating. However, electromagnetic waves traveling in single-layer anisotropic metamaterial produce diverging waves of different spatial frequency. In this work, it is shown that, using bilayer metamaterials that have complementary anisotropic property, the diverging waves are recombined to produce a subwavelength image, i.e., a superlens device can be designed. The simulation further shows that the design can be achieved using a metal/oxide multilayer, and a resolution of 30 nm can be easily obtained in the optical frequency range.

  16. Dietary boron, brain function, and cognitive performance.

    OpenAIRE

    Penland, J G

    1994-01-01

    Although the trace element boron has yet to be recognized as an essential nutrient for humans, recent data from animal and human studies suggest that boron may be important for mineral metabolism and membrane function. To investigate further the functional role of boron, brain electrophysiology and cognitive performance were assessed in response to dietary manipulation of boron (approximately 0.25 versus approximately 3.25 mg boron/2000 kcal/day) in three studies with healthy older men and wo...

  17. Plasma deposition of cubic boron nitride films from non-toxic material at low temperatures

    International Nuclear Information System (INIS)

    Boron nitride has become the focus of a considerable amount of interest because of its properties which relate closely to those of carbon. In particular, the cubic nitride phase has extreme hardness and very high thermal conductivity similar to the properties of diamond. The conventional methods of synthesis use the highly toxic and inflammable gas diborane (B2H6) as the reactant material. A study has been made of the deposition of thin films of boron nitride (BN) using non-toxic material by the plasma-assisted chemical vapour deposition technique. The source material was borane-ammonia (BH3-NH3) which is a crystalline solid at room temperature with a high vapour pressure. The BH3-NH3 vapour was decomposed in a 13.56 MHz nitrogen plasma coupled either inductively or capacitively with the system. The composition of the films was assessed by measuring their IR absorption when deposited on silicon and KBr substrates. The hexagonal (graphitic) and cubic (diamond-like) allotropes can be distinguished by their characteristic absorption bands which occur at 1365 and 780 cm-1 (hexagonal) and 1070 cm-1 (cubic). We have deposited BN films consisting of a mixture of hexagonal and cubic phases; the relative content of the cubic phase was found to be directly dependent on r.f. power and substrate bias. (orig.)

  18. Dynamical analysis of anisotropic inflation

    Science.gov (United States)

    Karčiauskas, Mindaugas

    2016-06-01

    The inflaton coupling to a vector field via the f(φ)2F μνFμν term is used in several contexts in the literature, such as to generate primordial magnetic fields, to produce statistically anisotropic curvature perturbation, to support anisotropic inflation, and to circumvent the η-problem. In this work, I perform dynamical analysis of this system allowing for the most general Bianchi I initial conditions. I also confirm the stability of attractor fixed points along phase-space directions that had not been investigated before.

  19. Latest developments in anisotropic hydrodynamics

    CERN Document Server

    Tinti, Leonardo

    2015-01-01

    We discuss the leading order of anisotropic hydrodynamics expansion. It has already been shown that in the (0+1) and (1+1)-dimensional cases it is consistent with the second order viscous hydrodynamics, and it provides a striking agreement with the exact solutions of the Boltzmann equation. Quite recently, a new set of equations has been proposed for the leading order of anisotropic hydrodynamics, which is consistent with the second order viscous hydrodynamics in the most general (3+1)-dimensional case, and does not require a next-to-leading treatment for describing pressure anisotropies in the transverse plane.

  20. Anisotropic hydrodynamics: Motivation and methodology

    International Nuclear Information System (INIS)

    In this proceedings contribution I review recent progress in our understanding of the bulk dynamics of relativistic systems that possess potentially large local rest frame momentum-space anisotropies. In order to deal with these momentum-space anisotropies, a reorganization of relativistic viscous hydrodynamics can be made around an anisotropic background, and the resulting dynamical framework has been dubbed “anisotropic hydrodynamics”. I also discuss expectations for the degree of momentum-space anisotropy of the quark–gluon plasma generated in relativistic heavy ion collisions at RHIC and LHC from second-order viscous hydrodynamics, strong-coupling approaches, and weak-coupling approaches

  1. Banishing brittle bones with boron

    Energy Technology Data Exchange (ETDEWEB)

    A 6-month study indicates that boron, not even considered an essential nutrient for people and animals, may be a key to preventing osteoporosis, say nutritionist Forrest H. Nielsen and anatomist Curtiss D. Hunt at ARS' Grand Forks, North Dakota, Human Nutrition Research Center. They believe the results of the study - the first to look at the nutritional effects of boron in humans - will generate a lot of interest in the element. In the study, 12 postmenopausal women consumed a very low boron diet (0.25 milligrams per day) for 17 weeks then were given a daily 3-mg supplement - representing the boron intake from a well-balanced diet - for 7 more weeks. Within 8 days after the supplement was introduced, the lost 40 percent less calcium, one-third less magnesium, and slightly less phosphorus through the urine. In fact, their calcium and magnesium losses were lower than prestudy levels, when they were on their normal diets. Since boron isn't considered essential for people, there is not recommended intake and no boron supplement on the market. Nielsen says the supplement of sodium borate used in the study was specially prepared based on the amount of boron a person would get from a well-balanced diet containing fruits and vegetables. He says the average boron intake is about 1.5 mg - or half the experimental dose - but average means a lot of people get less and a lot get more. Hunt cautioned that large doses of boron can be toxic, even lethal. The lowest reported lethal dose of boric acid is about 45 grams (1.6 ounces) for an adult and only 2 grams (0.07 ounce) for an infant.

  2. Radio-frequency sputter deposition of boron nitride based thin films

    International Nuclear Information System (INIS)

    Thin films (∼2 μm) of boron nitride, titanium boron nitride, and titanium aluminum boron nitride have been grown on molybdenum, niobium, and cemented carbide substrates employing nonreactive as well as reactive rf magnetron sputter deposition from either a BN, a TiN-BN, or a TiN--AlN--BN target. Substrates have been rf biased, with dc potentials up to -200 V. By means of nonreactive sputtering mixed-phase structures with dominant phases B48B2N2 (using a BN target), or B48B2N2 and hexagonal Ti--B--N (using a TiN--BN or a TiN--AlN--BN target) are formed. Reactive deposition leads to the existence of hexagonal BN in all deposition modes. In the cases of Ti--B--N and Ti--Al--B--N films this phase is accompanied by fcc Ti--B--N. SEM cross sections revealed very fine grained to fracture-amorphous film structures. Hardness measurements gave the following maximum HV 0.02 values: B--N films 2800, Ti--B--N films 2750, and Ti--Al--B--N films 1650

  3. Effects of anisotropic diffusion and finite island sizes in homoepitaxial growth Pt on Pt(100)-hex

    DEFF Research Database (Denmark)

    Mortensen, Jens Jørgen; Linderoth, T.R.; Jacobsen, Karsten Wedel; Lægsgaard, E.; Stensgaard, I.; Besenbacher, F.

    exhibits a height modulation caused by the misfit between the topmost quasi-hexagonal layer and the quadratic substrate. resulting in a highly anisotropic large scale surface morphology with six-atom wide channels running along the [1(1) over bar0$] direction. From an autocorrelation analysis of the......The diffusion, nucleation, and growth of Pt on the hexagonally reconstructed Pt(100)-hex surface are investigated. By means of Scanning Tunneling Microscopy (STM), the positions, sizes, and number densities of monoatomically high, rectangular. reconstructed Pt islands, formed in the submonolayer...... coverage regime. have been determined for substrate temperatures in the range T = 318-497 K and adatom deposition rates from R=4 x 10(-5) to 7 x 10(-3) site(-1) s(-1). The measurements are compared to the results of kinetic Monte Carlo (KMC) simulations and rate equation theory. The Pt(100)-hex surface...

  4. Lattice dynamics of α boron and of boron carbide

    International Nuclear Information System (INIS)

    The atomic structure and the lattice dynamics of α boron and of B4C boron carbide have been studied by Density Functional Theory (D.F.T.) and Density Functional Perturbation Theory (D.F.P.T.). The bulk moduli of the unit-cell and of the icosahedron have been investigated, and the equation of state at zero temperature has been determined. In α boron, Raman diffusion and infrared absorption have been studied under pressure, and the theoretical and experimental Grueneisen coefficients have been compared. In boron carbide, inspection of the theoretical and experimental vibrational spectra has led to the determination of the atomic structure of B4C. Finally, the effects of isotopic disorder have been modeled by an exact method beyond the mean-field approximation, and the effects onto the Raman lines has been investigated. The method has been applied to isotopic alloys of diamond and germanium. (author)

  5. Transverse electric surface mode in atomically thin Boron-Nitride.

    Science.gov (United States)

    Merano, Michele

    2016-06-01

    The spatial confinement and the propagation length of surface waves in a single-layer two-dimensional atomic crystal are analyzed in terms of its surface susceptibility and its surface conductivity. Based on the values of these macroscopic parameters, extracted from experimental observations, it is confirmed that graphene supports a transverse magnetic nonradiating surface mode in the ultraviolet spectral region while a single-layer hexagonal Boron-Nitride is predicted to support a transverse electric nonradiating surface mode in the visible spectrum. This last mode, at a vacuum wavelength of 633 nm, has a spatial confinement of 15 μm and an intensity-propagation distance greater than 2 cm. PMID:27244441

  6. A molecular dynamics study of nanofracture in monolayer boron nitride

    International Nuclear Information System (INIS)

    In this paper, we use molecular dynamics (MD) modeling to study the fracture properties of monolayer hexagonal boron nitride (h-BN) under mixed mode I and II loading. We investigate the impact of crack edge chirality, crack tip configuration and loading phase angle on the crack propagation path and critical stress intensity factors. The MD results predict that under all the loading phase angles cracks prefer to propagate along a zigzag direction and the critical stress intensity factors of zigzag cracks are higher than those of armchair cracks. Under mixed mode loading, the h-BN sheets can undergo out-of-plane deformations due to the buckling induced by compressive stresses. The out-of-plane deformations can be significant when mode II loading is dominant. An excessive amount of out-of-plane deformation can induce buckling cracks. Depending on the loading phase angle and crack configurations, buckling cracks can nucleate before or after the propagation of the original cracks

  7. Transverse electric surface mode in atomically thin Boron-Nitride

    CERN Document Server

    Merano, Michele

    2016-01-01

    The spatial confinement and the propagation length of surface waves in a single-layer two-dimensional atomic crystal are analysed in term of its surface susceptibility and its surface conductivity. Based on the values of these macroscopic parameters, extracted from experimental observations, it is confirmed that graphene supports a transverse magnetic non-radiating surface mode in the ultraviolet spectral region while a single-layer hexagonal Boron-Nitride is predicted to support a transverse electric non-radiating surface mode in the visible spectrum. This last mode, at a vacuum wavelength of 633 nm, has a spatial confinement of 15 microns and an intensity-propagation distance greater than 2 cm.

  8. Piezoelectricity in planar boron nitride via a geometric phase

    Science.gov (United States)

    Droth, Matthias; Burkard, Guido; Pereira, Vitor M.

    2016-08-01

    Due to their low surface mass density, two-dimensional materials with a strong piezoelectric response are interesting for nanoelectromechanical systems with high force sensitivity. Unlike graphene, the two sublattices in a monolayer of hexagonal boron nitride (hBN) are occupied by different elements, which breaks inversion symmetry and allows for piezoelectricity. This has been confirmed with density functional theory calculations of the piezoelectric constant of hBN. Here, we formulate an entirely analytical derivation of the electronic contribution to the piezoelectric response in this system based on the concepts of strain-induced pseudomagnetic vector potential and the modern theory of polarization that relates the polar moment to the Berry curvature. Our findings agree with the symmetry restrictions expected for the hBN lattice and reproduce well the magnitude of the piezoelectric effect previously obtained ab initio.

  9. A new and effective approach to boron removal by using novel boron-specific fungi isolated from boron mining wastewater.

    Science.gov (United States)

    Taştan, Burcu Ertit; Çakir, Dilara Nur; Dönmez, Gönül

    2016-01-01

    Boron-resistant fungi were isolated from the wastewater of a boron mine in Turkey. Boron removal efficiencies of Penicillium crustosum and Rhodotorula mucilaginosa were detected in different media compositions. Minimal Salt Medium (MSM) and two different waste media containing molasses (WM-1) or whey + molasses (WM-2) were tested to make this process cost effective when scaled up. Both isolates achieved high boron removal yields at the highest boron concentrations tested in MSM and WM-1. The maximum boron removal yield by P. crustosum was 45.68% at 33.95 mg l(-1) initial boron concentration in MSM, and was 38.97% at 42.76 mg l(-1) boron for R. mucilaginosa, which seemed to offer an economically feasible method of removing boron from the effluents. PMID:26877036

  10. Dimerized Mott insulators in hexagonal optical lattices

    International Nuclear Information System (INIS)

    We study bosonic atoms in optical honeycomb lattices with anisotropic tunneling and find dimerized Mott insulator (MI) phases with fractional filling. These incompressible insulating phases are characterized by an interaction-driven localization of particles in respect to the individual dimers and large local particle-number fluctuations within the dimers. We calculate the ground-state phase diagrams and the excitation spectra using an accurate cluster mean-field method. The cluster treatment enables us to probe the fundamental excitations of the dimerized MI where the excitation gap is dominated by the intra-dimer tunneling amplitude. This allows the distinction from normal Mott insulating phases gapped by the on-site interaction. In addition, we present analytical results for the phase diagram derived by a higher-order strong-coupling perturbative expansion approach. By computing finite lattices with large diameters the influence of a harmonic confinement is discussed in detail. It is shown that a large fraction of atoms forms the dimerized MI under experimental conditions. The necessary anisotropic tunneling can be realized either by periodic driving of the optical lattice or by engineering directly a dimerized lattice potential. The dimers can be mapped to their antisymmetric states creating a lattice with coupled p-orbitals. (paper)

  11. Elliptically distributed lozenge tilings of a hexagon

    CERN Document Server

    Betea, Dan

    2011-01-01

    We present a detailed study of a 4 parameter family of elliptic weights on tilings of a hexagon introduced by Borodin, Gorin and Rains, and generalize some of their results. In the process, we connect the combinatorics of the model with the theory of elliptic special functions. We first analyze some properties of the measure and introduce canonical coordinates that are useful for combinatorially interpreting results. We then show how the computed $n$-point function (called the elliptic Selberg density) and transitional probabilities connect to the theory of $BC_n$-symmetric multivariate elliptic special functions and difference operators discovered by Rains. In particular, the difference operators intrinsically capture the combinatorial model under study, while the elliptic Selberg density is a generalization (deformation) of probability distributions pervasive in the theory of random matrices and interacting particle systems. Based on quasi-commutation relations between elliptic difference operators, we cons...

  12. Structure of hexagonal copper(I) ferrite

    International Nuclear Information System (INIS)

    2H-CuFeO2, Mr=151.39, hexagonal, P63/mmc, a=3.035(1), c=11.449(3) A, V=91.33 A3, Z=2, Dx=5.50 Mg m-3, λ(Mo Kα)=0.71073 A, μ=18.6 mm-1, F(000)=142, room temperature, R(F)=0.033 for 173 independent reflections with F0>3σ(F0) and variables. Edge sharing FEO6 octahedra [point symmetry anti 3m,Fe-O=2028(1)A] form brucite-like layers in (00.1) which are linked by linear [2] coordinated Cu atoms [point symmetry anti 6m2, Cu-O=1.842(2) A]. 2H-CuFeO2 is a polytype of delafossite (3R-CuFeO2). (orig.)

  13. The hexagon hypothesis: Six disruptive scenarios.

    Science.gov (United States)

    Burtles, Jim

    2015-01-01

    This paper aims to bring a simple but effective and comprehensive approach to the development, delivery and monitoring of business continuity solutions. To ensure that the arguments and principles apply across the board, the paper sticks to basic underlying concepts rather than sophisticated interpretations. First, the paper explores what exactly people are defending themselves against. Secondly, the paper looks at how defences should be set up. Disruptive events tend to unfold in phases, each of which invites a particular style of protection, ranging from risk management through to business continuity to insurance cover. Their impact upon any business operation will fall into one of six basic scenarios. The hexagon hypothesis suggests that everyone should be prepared to deal with each of these six disruptive scenarios and it provides them with a useful benchmark for business continuity. PMID:26420396

  14. Permeation of Light Gases through Hexagonal Ice

    Directory of Open Access Journals (Sweden)

    Luis Gales

    2012-09-01

    Full Text Available Gas separation using porous solids have attracted great attention due to their energetic applications. There is an enormous economic and environmental interest in the development of improved technologies for relevant processes, such as H2 production, CO2 separation or O2 and N2 purification from air. New materials are needed for achieving major improvements. Crystalline materials, displaying unidirectional and single-sized pores, preferentially with low pore tortuosity and high pore density, are promising candidates for membrane synthesis. Herein, we study hexagonal ice crystals as an example of this class of materials. By slowly growing ice crystals inside capillary tubes we were able to measure the permeation of several gas species through ice crystals and investigate its relation with both the size of the guest molecules and temperature of the crystal.

  15. A 3D porous media liver lobule model: the importance of vascular septa and anisotropic permeability for homogeneous perfusion.

    Science.gov (United States)

    Debbaut, Charlotte; Vierendeels, Jan; Siggers, Jennifer H; Repetto, Rodolfo; Monbaliu, Diethard; Segers, Patrick

    2014-01-01

    The hepatic blood circulation is complex, particularly at the microcirculatory level. Previously, 2D liver lobule models using porous media and a 3D model using real sinusoidal geometries have been developed. We extended these models to investigate the role of vascular septa (VS) and anisotropic permeability. The lobule was modelled as a hexagonal prism (with or without VS) and the tissue was treated as a porous medium (isotropic or anisotropic permeability). Models were solved using computational fluid dynamics. VS inclusion resulted in more spatially homogeneous perfusion. Anisotropic permeability resulted in a larger axial velocity component than isotropic permeability. A parameter study revealed that results are most sensitive to the lobule size and radial pressure drop. Our model provides insight into hepatic microhaemodynamics, and suggests that inclusion of VS in the model leads to perfusion patterns that are likely to reflect physiological reality. The model has potential for applications to unphysiological and pathological conditions. PMID:23237543

  16. Failure in imperfect anisotropic materials

    DEFF Research Database (Denmark)

    Legarth, Brian Nyvang

    2005-01-01

    The fundamental cause of crack growth, namely nucleation and growth of voids, is investigated numerically for a two phase imperfect anisotropic material. A unit cell approach is adopted from which the overall stress strain is evaluated. Failure is observed as a sudden stress drop and depending on...

  17. Magnetic relaxation in anisotropic magnets

    DEFF Research Database (Denmark)

    Lindgård, Per-Anker

    1971-01-01

    The line shape and the kinematic and thermodynamic slowing down of the critical and paramagnetic relaxation in axially anisotropic materials are discussed. Kinematic slowing down occurs only in the longitudinal relaxation function. The thermodynamic slowing down occurs in either the transverse or...

  18. Anisotropic thermopower of the organic metal, β-(BEDT-TTF)2I3

    DEFF Research Database (Denmark)

    Mortensen, Kell; Williams, J.M.; Wang, H.H.

    1985-01-01

    Thermopower of the ambient pressure organic superconductor β-(BEDT-TTF)2I3 has been studied. Measurements performed on, respectively, crystals of needle formed morphology and on flake-like crystals with hexagon shape showed equal thermopower results. S was measured along the a-axis as well as along...... the b′-axis. Marked anisotropy is observed in the entire temperature region studied. The temperature dependence, as represented by dS/dT, is, however, nearly isotropic. On the basis of an analysis of anisotropic thermopower we attribute the isotropic part of S to a term depending on the bond...

  19. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Ashish Jain; C Ghosh; T R Ravindran; S Anthonysamy; R Divakar; E Mohandas; G S Gupta

    2013-12-01

    Structural characterization of electrodeposited boron was carried out by using transmission electron microscopy and Raman spectroscopy. Electron diffraction and phase contrast imaging were carried out by using transmission electron microscopy. Phase identification was done based on the analysis of electron diffraction patterns and the power spectrum calculated from the lattice images from thin regions of the sample. Raman spectroscopic examination was carried out to study the nature of bonding and the allotropic form of boron obtained after electrodeposition. The results obtained from transmission electron microscopy showed the presence of nanocrystallites embedded in an amorphous mass of boron. Raman microscopic studies showed that amorphous boron could be converted to its crystalline form at high temperatures.

  20. Boron diffusion in silicon devices

    Science.gov (United States)

    Rohatgi, Ajeet; Kim, Dong Seop; Nakayashiki, Kenta; Rounsaville, Brian

    2010-09-07

    Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.

  1. XPS analysis for cubic boron nitride crystal synthesized under high pressure and high temperature using Li3N as catalysis

    International Nuclear Information System (INIS)

    Highlights: • The cBN was synthesized by Li3N as catalyst under high pressure and high temperature (HPHT). • The film coated on the as-grown cBN crystals was studied by XPS. • The electronic structure variation in the film was investigated. • The growth mechanism of cubic boron nitride crystal was analyzed briefly. - Abstract: Cubic boron nitride (cBN) single crystals are synthesized with lithium nitride (Li3N) as catalyst under high pressure and high temperature. The variation of electronic structures from boron nitride of different layers in coating film on the cBN single crystal has been investigated by X-ray photoelectron spectroscopy. Combining the atomic concentration analysis, it was shown that from the film/cBN crystal interface to the inner, the sp2 fractions are decreasing, and the sp3 fractions are increasing in the film at the same time. Moreover, by transmission electron microscopy, a lot of cBN microparticles are found in the interface. For there is no Li3N in the film, it is possible that Li3N first reacts with hexagonal boron nitride to produce Li3BN2 during cBN crystals synthesis under high pressure and high temperature (HPHT). Boron and nitrogen atoms, required for cBN crystals growth, could come from the direct conversion from hexagonal boron nitride with the catalysis of Li3BN2 under high pressure and high temperature, but not directly from the decomposition of Li3BN2

  2. Boron Fullerenes: A First-Principles Study

    Directory of Open Access Journals (Sweden)

    Gonzalez Szwacki Nevill

    2007-01-01

    Full Text Available AbstractA family of unusually stable boron cages was identified and examined using first-principles local-density functional method. The structure of the fullerenes is similar to that of the B12icosahedron and consists of six crossing double-rings. The energetically most stable fullerene is made up of 180 boron atoms. A connection between the fullerene family and its precursors, boron sheets, is made. We show that the most stable boron sheets are not necessarily precursors of very stable boron cages. Our finding is a step forward in the understanding of the structure of the recently produced boron nanotubes.

  3. Boron nitrides synthesized directly from the elements at high pressures and temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Nicol, M.; Yoo, C.S.; Akella, J.; Cynn, H.

    1996-11-01

    We use angle-resolved synchrotron x-ray diffraction, laser sample heating, and diamond-anvil cells to follow in-situ chemical reactions directly between elemental boron and nitrogen. The structures of the solid reaction products vary with pressure. Below 10 GPa, hexagonal BN is the product; cubic or wurzite BN form at higher pressures. Under nitrogen-rich conditions, another hexagonal allotrope occurs which seems to be a new highly transparent, low density h`-BN. No direct reactions occur at ambient temperature even at pressures as high as 50 GPa, implying that a large activation barrier limits the kinetics of these exothermic processes. Laser heating overcomes the large kinetic activation barrier and initiates spontaneous, self-sustaining exothermic reactions even at moderate pressures.

  4. Dimensional Crossover of Thermal Transport in Hybrid Boron Nitride Nanostructures.

    Science.gov (United States)

    Sakhavand, Navid; Shahsavari, Rouzbeh

    2015-08-26

    Although boron nitride nanotubes (BNNT) and hexagonal-BN (hBN) are superb one-dimensional (1D) and 2D thermal conductors respectively, bringing this quality into 3D remains elusive. Here, we focus on pillared boron nitride (PBN) as a class of 3D BN allotropes and demonstrate how the junctions, pillar length and pillar distance control phonon scattering in PBN and impart tailorable thermal conductivity in 3D. Using reverse nonequilibrium molecular dynamics simulations, our results indicate that although a clear phonon scattering at the junctions accounts for the lower thermal conductivity of PBN compared to its parent BNNT and hBN allotropes, it acts as an effective design tool and provides 3D thermo-mutable features that are absent in the parent structures. Propelled by the junction spacing, while one geometrical parameter, e.g., pillar length, controls the thermal transport along the out-of-plane direction of PBN, the other parameter, e.g., pillar distance, dictates the gross cross-sectional area, which is key for design of 3D thermal management systems. Furthermore, the junctions have a more pronounced effect in creating a Kapitza effect in the out-of-plane direction, due to the change in dimensionality of the phonon transport. This work is the first report on thermo-mutable properties of hybrid BN allotropes and can potentially impact thermal management of other hybrid 3D BN architectures. PMID:26158661

  5. Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.

    Science.gov (United States)

    Vdovin, E E; Mishchenko, A; Greenaway, M T; Zhu, M J; Ghazaryan, D; Misra, A; Cao, Y; Morozov, S V; Makarovsky, O; Fromhold, T M; Patanè, A; Slotman, G J; Katsnelson, M I; Geim, A K; Novoselov, K S; Eaves, L

    2016-05-01

    We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states. PMID:27203338

  6. Carbon nanotubes with atomic impurities on boron nitride sheets under applied electric fields

    OpenAIRE

    Kang, Seoung-Hun; Kim, Gunn; Kwon, Young-Kyun

    2013-01-01

    We perform first-principles calculations to investigate the structural and electronic properties of metal-doped (10, 0) carbon nanotubes (CNTs) on a single hexagonal boron nitride (hBN) sheet in the presence of an external electric field. We consider K, Cl and Ni atoms as dopants to study the dependence of the electronic properties of the CNT on doping polarity and concentration. The electric field strength is varied from -0.2 V/\\AA to +0.2 V/\\AA to explore the effects of an external electric...

  7. Ab Initio Investigations of Thermoelectric Effects in Graphene – Boron Nitride Nanoribbons

    Directory of Open Access Journals (Sweden)

    Visan Camelia

    2016-01-01

    Full Text Available Thermoelectric effects of graphene – hexagonal boron nitride (hBN nanoribbons have been investigated by density functional theory (DFT calculations. Pristine zig-zag nanoribbons are not suited to achieve high thermopower as the transmission function is flat around the chemical potential. By introducing hBN inclusions, the nanoribbon systems exhibit enhanced thermopower, due to the asymmetries introduced in the spin dependent transmission functions. Finite temperature differences between the two contacts are considered. The possibility of a good integration of hBN into graphene, makes the hybrid systems suitable for thermoelectric applications, which may be subject to further optimizations.

  8. Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

    OpenAIRE

    Vdovin, E.E.; Mishchenko, A.; Greenaway, M. T.; Zhu, M. J.; Ghazaryan, D.; A. Misra; Y. Cao; Morozov, S. V.; Makarovsky, O.; Fromhold, T. M.; Patanè, A.; Slotman, G. J.; Katsnelson, M. I.; Geim, A K; Novoselov, K. S.

    2015-01-01

    We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\\sim$10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled...

  9. Controlling the microstructure and properties of wire arc additive manufactured Ti–6Al–4V with trace boron additions

    International Nuclear Information System (INIS)

    This study demonstrates that trace boron addition to Ti–6Al–4V coupons produced by additive layer manufacturing is an effective way to eliminate the deleterious anisotropic microstructures often encountered with this manufacturing technique. Trace boron additions (up to 0.13 wt.%) to this alloy eliminate grain boundary-α and colony-α, and instead produce a homogeneous α-microstructure consisting of fine equiaxed α-grains in both as-deposited and heat treated coupons. Prior-β grains remain columnar with boron addition but become narrower due to the wider solidification range and growth restricting effect of the boron solute. Compared to unmodified Ti–6Al–4V alloy, Ti–6Al–4V modified with trace boron additions showed up to 40% improvement in plasticity with no loss in strength under uniaxial compression at room temperature. Boron additions were found to inhibit twinning transmission that causes sudden large load drops during deformation of the unmodified Ti–6Al–4V alloy in the heat treated condition

  10. Synthesis and anti-oxidation performance of nanoflake-decorated boron nitride hollow microspheres

    Energy Technology Data Exchange (ETDEWEB)

    Li, Juan [College of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004 (China); Lin, Hong [Department of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084 (China); Chen, Yongjun, E-mail: chenyj99@163.com [College of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004 (China); College of Material and Chemical Engineering, Hainan University, Haikou 570228 (China); Su, Qiaoqiao; Bi, Xiaofan [College of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004 (China)

    2013-02-15

    Highlights: Black-Right-Pointing-Pointer A novel boron nitride (BN) composite structure composed of nanoflake and hollow microspheres was synthesized. Black-Right-Pointing-Pointer The raw materials are simple precursors of boron and Fe(NO{sub 3}){sub 3}{center_dot}9H{sub 2}O ethanol solution. Black-Right-Pointing-Pointer The structures have a high anti-oxidation temperature of 900 Degree-Sign C. Black-Right-Pointing-Pointer The growth mechanism consists of a combined vapor-liquid-solid (VLS) and vapor-solid (VS) model. - Abstract: In this study, a novel boron nitride composite structure composed of nanoflake-decorated hollow microspheres is demonstrated. A paste-like mixture is firstly prepared by mixing amorphous boron with ferric nitrate ethanol solution, followed by heating at 1300 Degree-Sign C in a flowing ammonia atmosphere for 5 h. Both the nanoflakes and microspheres are composed of crystalline hexagonal boron nitride. The hollow spheres have outer diameters of 0.8-3 {mu}m with thickness of about 300 nm, while the nanoflakes have thicknesses of 2-7 nm and lengths of 10-100 nm. Heating temperature is found to be crucial for the formation of this composite structure. The growth process consists of a vapor-liquid-solid growth stage of smooth hollow microspheres at lower temperature and a vapor-solid growth stage of nanoflakes on the surface of the microspheres at higher temperature. The boron nitride composite structure exhibits excellent anti-oxidation performance up to 900 Degree-Sign C.

  11. Conductivities in an anisotropic medium

    CERN Document Server

    Khimphun, Sunly; Park, Chanyong

    2016-01-01

    In order to imitate anisotropic medium of a condensed matter system, we take into account an Einstein-Maxwell-dilaton-axion model as a dual gravity theory where the anisotropy is caused by different momentum relaxations. This gravity model allows an anisotropic charged black hole solution. On this background, we investigate how the linear responses of vector modes like electric, thermoelectric, and thermal conductivities rely on the anisotropy. We find that the electric conductivity in low frequency limit shows a Drude peak and that in the intermediate frequency regime it reveals the power law behavior. Especially, when the anisotropy increases the exponent of the power law becomes smaller. In addition, we find that there exist a critical value for the anisotropy at which the DC conductivity reaches to its maximum value.

  12. Anisotropic Inflation and Cosmological Observations

    CERN Document Server

    Emami, Razieh

    2015-01-01

    Recent observations opened up a new window on the inflationary model building. As it was firstly reported by the WMAP data, there may be some indications of statistical anisotropy on the CMB map, although the statistical significance of these findings are under debate. Motivated by these observations, people begun considering new inflationary models which may lead to statistical anisotropy. The simplest possible way to construct anisotropic inflation is to introduce vector fields. During the course of this thesis, we study models of anisotropic inflation and their observational implications such as power spectrum, bispectrum etc. Firstly we build a new model, which contains the gauge field which breaks the conformal invariance while preserving the gauge invariance. We show that in these kind of models, there can be an attractor phase in the evolution of the system when the back-reaction of the gauge field becomes important in the evolution of the inflaton field. We then study the cosmological perturbation the...

  13. Stealths on Anisotropic Holographic Backgrounds

    CERN Document Server

    Ayón-Beato, Eloy; Juárez-Aubry, María Montserrat

    2015-01-01

    In this paper, we are interested in exploring the existence of stealth configurations on anisotropic backgrounds playing a prominent role in the non-relativistic version of the gauge/gravity correspondence. By stealth configuration, we mean a nontrivial scalar field nonminimally coupled to gravity whose energy-momentum tensor evaluated on the anisotropic background vanishes identically. In the case of a Lifshitz spacetime with a nontrivial dynamical exponent z, we spotlight the role played by the anisotropy to establish the holographic character of the stealth configurations, i.e. the scalar field is shown to only depend on the radial holographic direction. This configuration which turns out to be massless and without integration constants is possible for a unique value of the nonminimal coupling parameter. Then, using a simple conformal argument, we map this configuration into a stealth solution defined on the so-called hyperscaling violation metric which is conformally related to the Lifshitz spacetime. Thi...

  14. Microheater made of heavily boron doped single crystal silicon beam

    International Nuclear Information System (INIS)

    Microheater made of heavily Boron doped single crystal Si beam covered with SiO2 film, 1000 x 300 x 3 μm, is fabricated on the n type Si substrate by the anisotropic etching technique. As this microheater has an air bridge structure of low resistivity semiconductor material with positive but small temperature coefficient of resistance, a broad heating area up to 800 degrees C is easily obtained and it has quick response with the thermal time constant t of about 4 ms and has small power consumption. Since this heating area is made of p type layer in the n type substrate, this area can be electrically isolated from the substrate because of the formation of p-n junction

  15. Mirage technique in anisotropic solids

    OpenAIRE

    Quelin, X.; Perrin, B; Perrin, Bernard; Louis, G.

    1994-01-01

    Theoretical and experimental analysis of heat diffusion in an anisotropic medium are presented. The solution of the 3D thermal conduction equation in an orthorhombic medium is calculated by the mean of a Fourier transforms method. Experiments were performed on an orthorhombic polydiacetylene single crystal sample. The temperature field at the sample surface was determined using the photothermal probe beam deflection technique. Then the 3 coefficients of the thermal conductivity tensor have be...

  16. Bootstrapping the Three-Loop Hexagon

    International Nuclear Information System (INIS)

    We consider the hexagonal Wilson loop dual to the six-point MHV amplitude in planar N = 4 super Yang-Mills theory. We apply constraints from the operator product expansion in the near-collinear limit to the symbol of the remainder function at three loops. Using these constraints, and assuming a natural ansatz for the symbol's entries, we determine the symbol up to just two undetermined constants. In the multi-Regge limit, both constants drop out from the symbol, enabling us to make a non-trivial confirmation of the BFKL prediction for the leading-log approximation. This result provides a strong consistency check of both our ansatz for the symbol and the duality between Wilson loops and MHV amplitudes. Furthermore, we predict the form of the full three-loop remainder function in the multi-Regge limit, beyond the leading-log approximation, up to a few constants representing terms not detected by the symbol. Our results confirm an all-loop prediction for the real part of the remainder function in multi-Regge 3 → 3 scattering. In the multi-Regge limit, our result for the remainder function can be expressed entirely in terms of classical polylogarithms. For generic six-point kinematics other functions are required.

  17. Performance of the ARIANNA Hexagonal Radio Array

    CERN Document Server

    Barwick, S W; Besson, D Z; Binder, G; Binns, W R; Boersma, D; Bose, R G; Braun, D L; Buckley, J H; Bugaev, V; Buitink, S; Dookayka, K; Dowkontt, P F; Duffin, T; Euler, S; Gerhardt, L; Gustafsson, L; Hallgren, A; Hanson, J C; Israel, M H; Kiryluk, J; Klein, S; Kleinfelder, S; Nelles, A; Niederhausen, H; Olevitch, M A; Persichelli, C; Ratzlaff, K; Rauch, B F; Reed, C; Roumi, M; Samanta, A; Simburger, G E; Stezelberger, T; Tatar, J; Uggerhoj, U; Walker, J; Young, R

    2015-01-01

    Installation of the ARIANNA Hexagonal Radio Array (HRA) on the Ross Ice Shelf of Antarctica has been completed. This detector serves as a pilot program to the ARIANNA neutrino telescope, which aims to measure the diffuse flux of very high energy neutrinos by observing the radio pulse generated by neutrino-induced charged particle showers in the ice. All HRA stations ran reliably and took data during the entire 2014-2015 austral summer season. A new radio signal direction reconstruction procedure is described, and is observed to have a resolution better than a degree. The reconstruction is used in a preliminary search for potential neutrino candidate events in the data from one of the newly installed detector stations. Three cuts are used to separate radio backgrounds from neutrino signals. The cuts are found to filter out all data recorded by the station during the season while preserving 85.4% of simulated neutrino events that trigger the station. This efficiency is similar to that found in analyses of previ...

  18. Bootstrapping the Three-Loop Hexagon

    Energy Technology Data Exchange (ETDEWEB)

    Dixon, Lance J.; /CERN /SLAC; Drummond, James M.; /CERN /Annecy, LAPTH; Henn, Johannes M.; /Humboldt U., Berlin /Santa Barbara, KITP

    2011-11-08

    We consider the hexagonal Wilson loop dual to the six-point MHV amplitude in planar N = 4 super Yang-Mills theory. We apply constraints from the operator product expansion in the near-collinear limit to the symbol of the remainder function at three loops. Using these constraints, and assuming a natural ansatz for the symbol's entries, we determine the symbol up to just two undetermined constants. In the multi-Regge limit, both constants drop out from the symbol, enabling us to make a non-trivial confirmation of the BFKL prediction for the leading-log approximation. This result provides a strong consistency check of both our ansatz for the symbol and the duality between Wilson loops and MHV amplitudes. Furthermore, we predict the form of the full three-loop remainder function in the multi-Regge limit, beyond the leading-log approximation, up to a few constants representing terms not detected by the symbol. Our results confirm an all-loop prediction for the real part of the remainder function in multi-Regge 3 {yields} 3 scattering. In the multi-Regge limit, our result for the remainder function can be expressed entirely in terms of classical polylogarithms. For generic six-point kinematics other functions are required.

  19. Wettability of boron carbide

    International Nuclear Information System (INIS)

    The wettability of boron carbide has been examined by means of the sessile drop method, using the following candidate alloys: (96wt%AG-4wt%Ti), (Ag-26.5wt%Cu-3wt%Ti), (Sn-10wt%Ag-4wt%Ti), Sn(99.95wt%) and Al(99.99wt%). The results show that B4C is completely wetted by the Ag-based alloys. Sn-10wt%Ag-4wt%Ti alloy and pure Al partly wet the B4C surface, while pure Sn does not wet B4C at all. For all the alloys used, except pure Sn, a reaction layer was observed at the interface between the ceramic part and the metal drop. Although the spreading kinetics of the Al-drop was much slower compared with the Ti-containing alloys, the reaction rate was considerably higher in the former case. This suggests that aluminium is an attractive candidate material for brazing of B4C. Formation of the low melting B2O3 at the B4C surface may cause oxidation of the filler metal during joining, which, in turn, leads to a low bond strength

  20. Gold nanorods grown on microgels leading to hexagonal nanostructures.

    Science.gov (United States)

    Kumar, V R Rajeev; Samal, A K; Sreeprasad, T S; Pradeep, T

    2007-08-14

    Hexagonal patterns of gold nanorods were made by assembling gold nanorod-coated poly(N-isopropyl acrylamide) microgels. The required population of nanorods on the microgels was achieved by attaching nanoparticle seeds on the latter and growing them to nanorods. The various materials prepared were characterized by UV-vis spectroscopy and transmission electron microscopy. Similar experiments with nanoparticle-coated or prefabricated nanorod-coated microgels did not give such hexagonal patterns. We suggest that the interlocking of nanorods leads to these regular structures. This is the first report of a solution phase method for assembling nanorods into a hexagonal pattern. PMID:17637011

  1. Penta-Hepta Defect Motion in Hexagonal Patterns

    CERN Document Server

    Tsimring, L S

    1995-01-01

    Structure and dynamics of penta-hepta defects in hexagonal patterns is studied in the framework of coupled amplitude equations for underlying plane waves. Analytical solution for phase field of moving PHD is found in the far field, which generalizes the static solution due to Pismen and Nepomnyashchy (1993). The mobility tensor of PHD is calculated using combined analytical and numerical approach. The results for the velocity of PHD climbing in slightly non-optimal hexagonal patterns are compared with numerical simulations of amplitude equations. Interaction of penta-hepta defects in optimal hexagonal patterns is also considered.

  2. Defect Chaos of Oscillating Hexagons in Rotating Convection

    CERN Document Server

    Echebarria, B; Echebarria, Blas; Riecke, Hermann

    2000-01-01

    Using coupled Ginzburg-Landau equations, the dynamics of hexagonal patterns with broken chiral symmetry are investigated, as they appear in rotating non-Boussinesq or surface-tension-driven convection. We find that close to the secondary Hopf bifurcation to oscillating hexagons the dynamics are well described by a single complex Ginzburg-Landau equation (CGLE) coupled to the phases of the hexagonal pattern. At the bandcenter these equations reduce to the usual CGLE and the system exhibits defect chaos. Away from the bandcenter a transition to a frozen vortex state is found.

  3. Instabilities of Hexagonal Patterns with Broken Chiral Symmetry

    CERN Document Server

    Echebarria, B; Echebarria, Blas; Riecke, Hermann

    1999-01-01

    Three coupled Ginzburg-Landau equations for hexagonal patterns with broken chiral symmetry are investigated. They are relevant for the dynamics close to onset of rotating non-Boussinesq or surface-tension-driven convection. Steady and oscillatory, long- and short-wave instabilities of the hexagons are found. For the long-wave behavior coupled phase equations are derived. Numerical simulations of the Ginzburg-Landau equations indicate bistability between spatio-temporally chaotic patterns and stable steady hexagons. The chaotic state can, however, not be described properly with the Ginzburg-Landau equations.

  4. Whole Core Transport Calculation Methodology for a Hexagonal Core

    International Nuclear Information System (INIS)

    This report discusses the hexagonal module implemented to the DeCART code and the performance of them. The implemented hexagonal module includes the hexagonal ray tracing and the CMFD acceleration modules. The performance of the implemented hexagonal module is examined for 4 tests of: (1) CMFD acceleration test, (2) the accuracy test of the hexagonal module, (3) the performance test for 2-D NGNP problem and (4) the applicability test for 3-D NGNP problem. The features of the implemented hexagonal modules are: (1) The Modular ray tracing scheme based on a hexagonal assembly and a path linking scheme between the modular rays. (2) Segment generation based on the structure unit. (3) Cell ray approximation: This feature is developed to reduce the memory required to store the segment information. (4) Modified cycle ray scheme that begins the ray tracing at a given surface and finishes if the reflected ray meets the starting surface. This feature is developed to reduce the memory required for the angular flux at the core boundary. (5) Fixed assembly geometry. The pin geometry of the single pin per assembly problem is different from that of the multi-pin problem. The core geometry of a single assembly problem is also different from that of the multi-assembly problem. (6) CMFD module based on unstructured cell. This feature is to deal with the irregular gap cells that are positioned at the assembly boundaries. The examination results of the 4 tests can be summarized as: (1) The CMFD acceleration test shows that the CMFD module speedups about greater than 200 for the core problem. (2) The accuracy test shows that the hexagonal MOC module produces an accurate solution of less than 60 pcm of eigenvalue and less than 2 % of local pin power errors. (3) The performance test for 2-D NGNP problem shows that the implemented hexagonal module works soundly and produces a reasonable solution by cooperating with the existing DeCART library and the other modules. (4) The applicability

  5. Whole Core Transport Calculation Methodology for a Hexagonal Core

    Energy Technology Data Exchange (ETDEWEB)

    Cho, J. Y.; Kim, K. S.; Lee, C. C.; Zee, S. Q.; Joo, H. G

    2007-07-15

    This report discusses the hexagonal module implemented to the DeCART code and the performance of them. The implemented hexagonal module includes the hexagonal ray tracing and the CMFD acceleration modules. The performance of the implemented hexagonal module is examined for 4 tests of: (1) CMFD acceleration test, (2) the accuracy test of the hexagonal module, (3) the performance test for 2-D NGNP problem and (4) the applicability test for 3-D NGNP problem. The features of the implemented hexagonal modules are: (1) The Modular ray tracing scheme based on a hexagonal assembly and a path linking scheme between the modular rays. (2) Segment generation based on the structure unit. (3) Cell ray approximation: This feature is developed to reduce the memory required to store the segment information. (4) Modified cycle ray scheme that begins the ray tracing at a given surface and finishes if the reflected ray meets the starting surface. This feature is developed to reduce the memory required for the angular flux at the core boundary. (5) Fixed assembly geometry. The pin geometry of the single pin per assembly problem is different from that of the multi-pin problem. The core geometry of a single assembly problem is also different from that of the multi-assembly problem. (6) CMFD module based on unstructured cell. This feature is to deal with the irregular gap cells that are positioned at the assembly boundaries. The examination results of the 4 tests can be summarized as: (1) The CMFD acceleration test shows that the CMFD module speedups about greater than 200 for the core problem. (2) The accuracy test shows that the hexagonal MOC module produces an accurate solution of less than 60 pcm of eigenvalue and less than 2 % of local pin power errors. (3) The performance test for 2-D NGNP problem shows that the implemented hexagonal module works soundly and produces a reasonable solution by cooperating with the existing DeCART library and the other modules. (4) The applicability

  6. A Hexagonal multiband fractal antenna using for wireless applications

    Directory of Open Access Journals (Sweden)

    Amanpreet Kaur

    2012-09-01

    Full Text Available In this paper, a multiband Fractal antenna having the shape of hexagonal is proposed. This hexagonal antenna is used for different wireless applications. Three iterations of the hexagonal fractal multiband antenna are examined. With this structure it is possible to configure the multiband frequency at various bands and return loss to obtain high gain. The Computer Simulation Technology Microwave Studio(CST MWS software was used to design and analyze the antenna for different wireless applications at range 1-6GHz.

  7. Thermal conductivity of boron carbide-boron nitride composites

    International Nuclear Information System (INIS)

    This paper reports that because of their preferred orientation, the addition of boron nitride dispersions to hot-pressed boron carbide was found to result in a considerable degree of anisotropy in thermal conductivity of the resulting composite, indicated by an increase in the thermal conductivity perpendicular to the hot-pressing direction by as much as a factor of 3 at the highest boron nitride volume fractions of this study, and a decrease in the thermal conductivity parallel to the hot-pressing direction by as much as a factor of 2. The composite data were found to be below the values expected from composite theory, which may represent indirect evidence for the existence of an interfacial thermal barrier

  8. The boron trifluoride nitromethane adduct

    Science.gov (United States)

    Ownby, P. Darrell

    2004-02-01

    The separation of the boron isotopes using boron trifluoride·organic-donor, Lewis acid·base adducts is an essential first step in preparing 10B enriched and depleted crystalline solids so vital to nuclear studies and reactor applications such as enriched MgB 2, boron carbide, ZrB 2, HfB 2, aluminum boron alloys, and depleted silicon circuits for radiation hardening and neutron diffraction crystal structure studies. The appearance of this new adduct with such superior properties demands attention in the continuing search for more effective and efficient means of separation. An evaluation of the boron trifluoride nitromethane adduct, its thermodynamic and physical properties related to large-scale isotopic separation is presented. Its remarkably high separation factor was confirmed to be higher than the expected theoretical value. However, the reportedly high acid/donor ratio was proven to be an order of magnitude lower. On-going research is determining the crystal structure of deuterated and 11B enriched 11BF 3·CD 3NO 2 by X-ray and neutron diffraction.

  9. Boron carbide nanolumps on carbon nanotubes

    Science.gov (United States)

    Lao, J. Y.; Li, W. Z.; Wen, J. G.; Ren, Z. F.

    2002-01-01

    Boron carbide nanolumps are formed on the surface of multiwall carbon nanotubes by a solid-state reaction between boron and carbon nanotubes. The reaction is localized so that the integrity of the structure of carbon nanotubes is maintained. Inner layers of multiwall carbon nanotubes are also bonded to boron carbide nanolumps. These multiwall carbon nanotubes with boron carbide nanolumps are expected to be the ideal reinforcing fillers for high-performance composites because of the favorable morphology.

  10. NEW ADVANCES IN BORON SOIL CHEMISTRY

    Science.gov (United States)

    Boron is an essential micronutrient element required for plant growth. Boron deficiency is wide-spread in crop plants throughout the world especially in coarse-textured soils in humid areas. Boron toxicity can also occur, especially in arid regions under irrigation. Plants respond directly to the...

  11. Bifurcation theory for hexagonal agglomeration in economic geography

    CERN Document Server

    Ikeda, Kiyohiro

    2014-01-01

    This book contributes to an understanding of how bifurcation theory adapts to the analysis of economic geography. It is easily accessible not only to mathematicians and economists, but also to upper-level undergraduate and graduate students who are interested in nonlinear mathematics. The self-organization of hexagonal agglomeration patterns of industrial regions was first predicted by the central place theory in economic geography based on investigations of southern Germany. The emergence of hexagonal agglomeration in economic geography models was envisaged by Krugman. In this book, after a brief introduction of central place theory and new economic geography, the missing link between them is discovered by elucidating the mechanism of the evolution of bifurcating hexagonal patterns. Pattern formation by such bifurcation is a well-studied topic in nonlinear mathematics, and group-theoretic bifurcation analysis is a well-developed theoretical tool. A finite hexagonal lattice is used to express uniformly distri...

  12. Preparation and characterization of hexagonal close-packed Ni nanoparticles

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Hexagonal close-packed Ni nanoparticles were synthesized using a heat-treating technique with the precursors prepared by the sol-gel method.The synthesis condition,structure,and morphology of the samples were characterized and analysed by thermogravimetric analysis (TG),differential thermal analysis (DTA),X-ray diffraction (XRD) and transmission electron microscopy (TEM).Results indicate that the hexagonal close packed Ni nanoparticles were synthesized at a heat-treating temperature of 300℃.The cell constants are calculated at a=0.2652 nm and c=0.4334 nm.The average grain size of the hexagonal close-packed Ni particles evaluated by Scherrer equation is about 12 nm.The phase transformation from a hexagonal close-packed Ni to a face-centered cubic Ni structure occurred when the heat-treating temperature was increased.

  13. Stability of hexagonal patterns in Benard-Marangoni convection

    International Nuclear Information System (INIS)

    Hexagonal patterns in Benard-Marangoni (BM) convection are studied within the framework of amplitude equations. Near threshold they can be described with Ginzburg-Landau equations that include spatial quadratic terms. The planform selection problem between hexagons and rolls is investigated by explicitly calculating the coefficients of the Ginzburg-Landau equations in terms of the parameters of the fluid. The results are compared with previous studies and with recent experiments. In particular, steady hexagons that arise near onset can become unstable as a result of long-wave instabilities. Within weakly nonlinear theory, a two-dimensional phase equation for long-wave perturbations is derived. This equation allows us to find stability regions for hexagon patterns in BM convection

  14. Boron doping a semiconductor particle

    Science.gov (United States)

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  15. Preparation of Poly(p-phenylene sulfi de)/Carbon Composites with Enhanced Thermal Conductivity and Electrical Insulativity via Hybrids of Boron Nitride and Carbon Fillers

    Institute of Scientific and Technical Information of China (English)

    WU Jieli; WANG Jinwen; CHEN Feng

    2015-01-01

    The present work enhanced the thermal conductivity of poly(p-phenylene sulfi de)/expanded graphites and poly(p-phenylene sulfi de)/carbon nanotubes, by incorporating composites with hexagonal boron nitride, which simultaneously succeeded in raising the electrical conductivity of the systems. A two-step mechanical processing method which includes rotating solid-state premixing and inner mixing was adopted to improve dispersion of the hybrids, contributing to the formation of an interspered thermal conductive network. Similar synergic effect in thermal conductivity enhancement was discovered in the hybrid systems regardless of the dimension difference between the two carbonfi llers. Such is postulated to be the one satisfying advantage generated by the afore-mentioned network; the other is the insulativity of the hybrid systems given by the effective blockage of hexagonal boron nitride as an insulating material in our network.

  16. CMFD Formulation for a Hexagonal MOC Transport Calculation

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Jin-Young; Kim, Kang-Seog; Lee, Chung-Chan [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of); Joo, Han-Gyu [Seoul National Univ., Seoul (Korea, Republic of)

    2006-07-01

    Recently, the DeCART (Deterministic Core Analysis based on Ray Tracing) code equips the hexagonal transport kernel which solves the heterogeneous hexagonal core problem by the MOC transport equation. Also, the multi-group CMFD module is equipped to obtain the transport solution efficiently. In this paper, some features included in the MOC and CMFD modules are described first, and then the acceleration performance of the CMFD module is examined.

  17. Multidisciplinary approach to cylindrical anisotropic metamaterials

    OpenAIRE

    Carbonell Olivares, Jorge; Torrent Martí, Daniel; Diaz Rubio, Ana; Sánchez-Dehesa Moreno-Cid, José

    2011-01-01

    Anisotropic characteristics of cylindrically corrugated microstructures are analyzed in terms of their acoustic and electromagnetic (EM) behavior paying special attention to their differences and similarities. A simple analytical model has been developed using effective medium theory to understand the anisotropic features of both types of waves in terms of radial and angular components of the wave propagation velocity. The anisotropic constituent parameters have been obtained by measuring the...

  18. Investigation of optical, structural and morphological properties of nanostructured boron doped TiO2 thin films

    Indian Academy of Sciences (India)

    Savaş Sönmezoǧlu; Banu Erdoǧan; İskender Askeroǧlu

    2013-12-01

    Pure and different ratios (1, 3, 5, 7 and 10%) of boron doped TiO2 thin films were grown on the glass substrate by using sol–gel dip coating method having some benefits such as basic and easy applicability compared to other thin film production methods. To investigate the effect of boron doped on the physical properties of TiO2, structural, morphological and optical properties of growth thin films were examined. 1% boron-doping has no effect on optical properties of TiO2 thin film; however, optical properties vary with > 1%. From X-ray diffraction spectra, it is seen that TiO2 thin films together with doping of boron were formed along with TiB2 hexagonal structure having (111) orientation, B2O3 cubic structure having (310) orientation, TiB0.024O2 tetragonal structure having rutile phase (110) orientation and polycrystalline structures. From SEM images, it is seen that particles together with doping of boron have homogeneously distributed and held onto surface.

  19. Boron steel. I Part. Preparation

    International Nuclear Information System (INIS)

    With the advent of the first nuclear reactors arise the need for control rods and shielding duties for some types of radiations. One of the materials used for this purpose has been the high boron steel. This paper describes the melting and casting procedures employed for the production, at laboratory scale, of steels with Boron content ranging from 1 to 4 per cent, as well as the metallographic and X-Ray techniques used for the identification of the present phases. The electrolytic technique employed for the isolation of the Fe2B phase and its subsequent X-Ray identification has proved to be satisfactory. (Author) 11 refs

  20. Shear amorphization of boron suboxide

    International Nuclear Information System (INIS)

    We report for the first time the shear-induced local amorphization of boron suboxide subjected to nanoindentation. The amorphous bands have a width of ∼1–3 nm and a length of 200–300 nm along the (01¯11) crystal plane. We show direct experimental evidence that the amorphous shear bands of boron suboxide are driven from the coalescence of dislocation loops under high shear stresses. These observations provide insights into the microscopic deformation and failure of high-strength and lightweight ceramics

  1. Thermal conductivity of boron carbides

    Science.gov (United States)

    Wood, C.; Emin, D.; Gray, P. E.

    1985-01-01

    Knowledge of the thermal conductivity of boron carbide is necessary to evaluate its potential for high-temperature thermoelectric energy conversion applications. Measurements have been conducted of the thermal diffusivity of hot-pressed boron carbide BxC samples as a function of composition (x in the range from 4 to 9), temperature (300-1700 K), and temperature cycling. These data, in concert with density and specific-heat data, yield the thermal conductivities of these materials. The results are discussed in terms of a structural model that has been previously advanced to explain the electronic transport data. Some novel mechanisms for thermal conduction are briefly discussed.

  2. Mechanical properties of boron coatings

    International Nuclear Information System (INIS)

    Internal stress of coatings will cause reliability problems, such as adhesion failure and peeling. We measured the internal stress in boron coatings, which was prepared by the ion plating method, with an apparatus based on the optically levered laser technique. The boron coatings exhibited large compressive stress in the range from -0.5 GPa to -2.6 GPa. It was found that these compressive stresses were decreasing functions of the deposition rate and were increasing functions of the ion bombardment energy. ((orig.))

  3. Monoclinic to two-dimensional hexagonal transformation in hexacatenar molecules with a 1,2,3-triazole-based conjugated rod: morphology-dependent thermochromic behavior.

    Science.gov (United States)

    Han, Kyuwon; Cho, Byoung-Ki

    2014-10-14

    Novel hexacatenar molecules based on a 1,2,3-triazole-extended aromatic rod self-assemble into crystalline monoclinic and liquid crystalline hexagonal columnar structures depending on temperature. The phase transition may involve a conformational change from an anisotropic transoid to a half-disk cisoid conformer upon melting. In a hexacatenar molecule with sixfold octyl chains, the crystal-to-LC transition accompanies a photoluminescence color change from sky blue to dark blue, which is attributed to the formation of higher-order aggregates in the crystalline state. PMID:25207835

  4. Theoretical calculations of low-field electroreflectance of ultra-thin hexagonal BN films at the fundamental absorption edge

    International Nuclear Information System (INIS)

    A theory is developed to describe the electric field effect on the reflectivity of ultra-thin films of hexagonal boron nitride (h-BN) at the fundamental absorption edge. The formulation of the theory is based on the original nonlinear optical approach to electroreflectance (ER) worked out by Aspnes and Rowe (1972 Phys. Rev. B 5 4022). Within the framework of the approach, the electric-field-induced change in the reflectivity in the low-field regime is expressed in terms of the third derivative of the linear optical dielectric function of the system. An explicit closed-form expression for this function is derived within the independent-layer approximation using the tight-binding representation for the π-electron energy bands of h-BN atomic layers. Incorporating this result with the general formalism of Aspnes and Rowe enables the electro-optical response function to be obtained in an explicit analytic form convenient to further numerical analysis for any particular set of input empirical parameters. The results of such an analysis suitable for the ER effect in few-layer h-BN films are presented and discussed in the context of important information they are able to provide for band structure parameters of this material. Our findings (e.g. distinct resonant field-invariant spectral features in the ER near the fundamental bandgap of the material under study) suggest that the ER technique can be used as a sensitive tool to help characterize the electronic structure of atomic hexagonal layers built from boron and nitrogen. (paper)

  5. Boron-enhanced diffusion of boron from ultralow-energy boron implantation

    International Nuclear Information System (INIS)

    The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B+, the threshold implantation dose which leads to BED lies between 3 x 1014 and of 1 x 1015/cm-2. Formation of the shallowest possible junctions by 0.5 keV B+ requires that the implant dose be kept lower than this threshold

  6. de Haas-van Alphen investigations of nonmagnetic boron carbide superconductors

    International Nuclear Information System (INIS)

    The dissertation presents de Haas-van Alphen investigations on the nonmagnetic boron carbide superconductors LuNi2B2C and YNi2B2C. From the quantum oscillations in the normal conductivity phase, in combination with band structure calculations, information was obtained on the distributed Fermi surface architecture and on the electron-phonon coupling of the boron carbides. The coupling is strongly anisotropic and dependent on the Fermi surfaces. This suggests a multiband mechanism of superconductivity in this material class. Further, de Haas-van-Alphen oscillations of several Fermi surfaces were observed below Bc2 in the deep Shubnikov phase, whose behaviour cannot be described by existing theories. It may be assumed, however, that the existence of oscillations far below Bc2 suggests the existence of electronic states in the Shubnikov phase. (orig.)

  7. New charged anisotropic compact models

    Science.gov (United States)

    Kileba Matondo, D.; Maharaj, S. D.

    2016-07-01

    We find new exact solutions to the Einstein-Maxwell field equations which are relevant in the description of highly compact stellar objects. The relativistic star is charged and anisotropic with a quark equation of state. Exact solutions of the field equations are found in terms of elementary functions. It is interesting to note that we regain earlier quark models with uncharged and charged matter distributions. A physical analysis indicates that the matter distributions are well behaved and regular throughout the stellar structure. A range of stellar masses are generated for particular parameter values in the electric field. In particular the observed mass for a binary pulsar is regained.

  8. Model for Anisotropic Directed Percolation

    OpenAIRE

    Nguyen, V. Lien; Canessa, Enrique

    1997-01-01

    We propose a simulation model to study the properties of directed percolation in two-dimensional (2D) anisotropic random media. The degree of anisotropy in the model is given by the ratio $\\mu$ between the axes of a semi-ellipse enclosing the bonds that promote percolation in one direction. At percolation, this simple model shows that the average number of bonds per site in 2D is an invariant equal to 2.8 independently of $\\mu$. This result suggests that Sinai's theorem proposed originally fo...

  9. Anisotropic spectra of acoustic turbulence

    International Nuclear Information System (INIS)

    We found universal anizopropic spectra of acoustic turbulence with the linear dispersion law ω(k)=ck within the framework of generalized kinetic equation which takes into account the finite time of three-wave interactions. This anisotropic spectra can assume both scale-invariant and non-scale-invariant form. The implications for the evolution of the acoustic turbulence with nonisotropic pumping are discussed. The main result of the article is that the spectra of acoustic turbulence tend to become more isotropic. (c) 2000 The American Physical Society

  10. Anisotropic and nonlinear optical waveguides

    CERN Document Server

    Someda, CG

    1992-01-01

    Dielectric optical waveguides have been investigated for more than two decades. In the last ten years they have had the unique position of being simultaneously the backbone of a very practical and fully developed technology, as well as an extremely exciting area of basic, forefront research. Existing waveguides can be divided into two sets: one consisting of waveguides which are already in practical use, and the second of those which are still at the laboratory stage of their evolution. This book is divided into two separate parts: the first dealing with anisotropic waveguides, an

  11. BRDF Interpolation using Anisotropic Stencils

    Czech Academy of Sciences Publication Activity Database

    Vávra, Radomír; Filip, Jiří

    Springfield: Society for Imaging Science and Technology , 2016 - (Imai, F.; Ortiz Segovia, M.; Urban, P.), MMRMA-356.1-MMRMA-356.6 ISSN 2470-1173. [IS&T International Symposium on Electronic Imaging 2016, Measuring, Modeling, and Reproducing Material Appearance 2016. San Francisco (US), 14.2.2016-18.2.2016] R&D Projects: GA ČR(CZ) GA14-02652S Institutional support: RVO:67985556 Keywords : BRDF * stencil * anisotropic * interpolation Subject RIV: BD - Theory of Information http://library.utia.cas.cz/separaty/2016/RO/vavra-0457068.pdf

  12. HEXAGON MOSAIC MAPS FOR DISPLAY OF UNIVARIATE AND BIVARIATE GEOGRAPHICAL DATA

    Science.gov (United States)

    Hexagon mosaic maps and hexagon-based ray glyph maps are presented. he phrase "hexagon mosaic map" refers to maps that use hexagons to tessellate major areas of a map such as land masses. exagon mosaic maps are similar to color-contour (isarithm) maps and show broad regional patt...

  13. Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

    Science.gov (United States)

    Kurachi, Ikuo; Yoshioka, Kentaro

    2015-09-01

    An analytical boron diffusivity model in silicon for thermal diffusion from a boron silicate glass (BSG) film has been proposed in terms of enhanced diffusion due to boron-silicon interstitial pair formation. The silicon interstitial generation is considered to be a result of the silicon kick-out mechanism by the diffused boron at the surface. The additional silicon interstitial generation in the bulk silicon is considered to be the dissociation of the diffused pairs. The former one causes the surface boron concentration dependent diffusion. The latter one causes the local boron concentration dependent diffusion. The calculated boron profiles based on the diffusivity model are confirmed to agree with the actual diffusion profiles measured by secondary ion mass spectroscopy (SIMS) for a wide range of the BSG boron concentration. This analytical diffusivity model is a helpful tool for p+ boron diffusion process optimization of n-type solar cell manufacturing.

  14. Analysis of boronized wall in LHD

    International Nuclear Information System (INIS)

    Boronization has been carried out in some experimental fusion devices as one of wall conditioning Methods. The well-known merits of the boronization are as follows: 1) coated-boron on the first wall has strong gettering function for oxygen impurities and oxygen has been kept into boron films as a boron-oxide and 2) boron film covers first wall with apparently low Z materials facing the plasma. However, an operation scenario of boronization for next generation devices such as ITER is not optimized. In this paper, we discuss an optimized method of coated film uniformity in a wide area and a lifetime of boron film as an oxygen getter using experimental data in the large helical device (LHD). In LHD, boronization by glow discharges has been carried out a few times during each experimental campaign. Helium-diborane mixtured gas is used and plasma facing components (PFM) are stainless steel (SS) for the first wall and carbon for the divertor plates kept in the room temperature. Material probes made of SS316 and Si were installed in the vacuum vessel and exposed during the experimental campaign. Depth profiles of their impurities were analyzed using the X-ray Photoelectron Spectroscopy (XPS) and the Auger electron spectroscopy (AES). Two types of gettering process by boron film have been investigated. One is the process during boronization and the other is that after boronization. Concerning a lifetime of boron film, the distribution of oxygen near the top surface region (0 to 20 nm) indicates a process of oxygen gettering, it shows a contribution after boronization. In this paper, these kinds of process using material probes are shown. (authors)

  15. Boron Poisoning of Plutonium Solutions

    International Nuclear Information System (INIS)

    The results of a theoretical investigation into the possible relaxation of criticality concentration limits in wet chemical reprocessing plants, due to the introduction of boron poisoning, are reported. The following systems were considered: 1. 1 in. stainless steel tubes filled with boron carbide at various pitches in homogeneous mixtures of 239Pu (NO3)4, 5H2O and water. 2. 1 in. and 2 in borosilicate glass Raschig rings in homogeneous mixtures of 239Pu (NO3)4, 5H2O and water. 3. The concentration of natural boron required for k∞ = 1 in homogeneous mixtures of 239Pu-B-H2O. The method of calculation was Monte Carlo using the GEM code with Nuclear Data File cross-sections. The Raschig rings used are those commercially available. The core model consisted of a cubic arrangement of unit cubes of solution within each of which a Raschig ring was centrally placed. The arrangement was such that the rings were regularly stacked with axes parallel, but the side of the unit cube was fixed to preserve the random packing density. Comparison is made with other reported results on boron poisoning. (author)

  16. Boron sorption characteristics in resins

    International Nuclear Information System (INIS)

    The purpose of boron addition in a nuclear power plant is to control the reactivity. In PHWRs, it is injected into the moderator system in the form of boric anhydride solution, while in PHWRs, it is added to the primary heat transport system in the form of boric acid solution. The required boron levels in PHWRs are controlled by valving in strong base anion exchangers having exchangeable species in OD- form while in PHWRs, the same can be achieved by restoring to the use of Boron Thermal Regeneration System (BTRS). This system operates on the principle of existence of different amounts of various polyborate ions at different temperatures, solution pH's and the boric acid concentrations and on the reversible sorption of these polyions on strong base anion exchange resins. This report describes the salient features of boron sorption characteristics on four types of anion exchange resins, based on experimental data generated in the chemical laboratories of Reactor Engineering Division of the Bhabha Atomic Research Centre, Bombay. The report further makes an attempt to calculate the pH of the resin and solution phases and the percentages of different polyborates and undissociated boric acid, under the experimental conditions investigated. (author). 30 refs., 4 figs., 20 tables

  17. Advanced microstructure of boron carbide.

    Science.gov (United States)

    Werheit, Helmut; Shalamberidze, Sulkhan

    2012-09-26

    The rhombohedral elementary cell of the complex boron carbide structure is composed of B(12) or B(11)C icosahedra and CBC, CBB or B□B (□, vacancy) linear arrangements, whose shares vary depending on the actual chemical compound. The evaluation of the IR phonon spectra of isotopically pure boron carbide yields the quantitative concentrations of these components within the homogeneity range. The structure formula of B(4.3)C at the carbon-rich limit of the homogeneity range is (B(11)C) (CBC)(0.91) (B□B)(0.09) (□, vacancy); and the actual structure formula of B(13)C(2) is (B(12))(0.5)(B(11)C)(0.5)(CBC)(0.65)(CBB)(0.16) (B□B)(0.19), and deviates fundamentally from (B(12))CBC, predicted by theory to be the energetically most favourable structure of boron carbide. In reality, it is the most distorted structure in the homogeneity range. The spectra of (nat)B(x)C make it evident that boron isotopes are not randomly distributed in the structure. However, doping with 2% silicon brings about a random distribution. PMID:22945740

  18. Boron isotopes in geothermal systems

    International Nuclear Information System (INIS)

    Boron is a highly mobile element and during water-rock reactions, boron is leached out of rocks with no apparent fractionation. In geothermal systems where the water recharging the systems are meteoric in origin, the B isotope ratio of the geothermal fluid reflects the B isotope ratio of the rocks. Seawater has a distinctive B isotope ratio and where seawater recharges the geothermal system, the B isotope ratio of the geothermal system reflects the mixing of rock derived B and seawater derived B. Any deviations of the actual B isotope ratio of a mixture reflects subtle differences in the water-rock ratios in the cold downwelling limb of the hydrothermal system. This paper will present data from a variety of different geothermal systems, including New Zealand; Iceland; Yellowston, USA; Ibusuki, Japan to show the range in B isotope ratios in active geothermal systems. Some of these systems show well defined mixing trends between seawater and the host rocks, whilst others show the boron isotope ratios of the host rock only. In geothermal systems containing high amounts of CO2 boron isotope ratios from a volatile B source can also be inferred. (auth)

  19. Electromagnetism on anisotropic fractal media

    Science.gov (United States)

    Ostoja-Starzewski, Martin

    2013-04-01

    Basic equations of electromagnetic fields in anisotropic fractal media are obtained using a dimensional regularization approach. First, a formulation based on product measures is shown to satisfy the four basic identities of the vector calculus. This allows a generalization of the Green-Gauss and Stokes theorems as well as the charge conservation equation on anisotropic fractals. Then, pursuing the conceptual approach, we derive the Faraday and Ampère laws for such fractal media, which, along with two auxiliary null-divergence conditions, effectively give the modified Maxwell equations. Proceeding on a separate track, we employ a variational principle for electromagnetic fields, appropriately adapted to fractal media, so as to independently derive the same forms of these two laws. It is next found that the parabolic (for a conducting medium) and the hyperbolic (for a dielectric medium) equations involve modified gradient operators, while the Poynting vector has the same form as in the non-fractal case. Finally, Maxwell's electromagnetic stress tensor is reformulated for fractal systems. In all the cases, the derived equations for fractal media depend explicitly on fractal dimensions in three different directions and reduce to conventional forms for continuous media with Euclidean geometries upon setting these each of dimensions equal to unity.

  20. Variations in Crystalline Structures and Electrical Properties of Single Crystalline Boron Nitride Nanosheets.

    Science.gov (United States)

    Aldalbahi, Ali; Zhou, Andrew Feng; Feng, Peter

    2015-01-01

    We report the studies of (1) the basic mechanism underlying the formation of defect-free, single crystalline boron nitride nanosheets (BNNSs) synthesized using pulsed laser plasma deposition (PLPD) technique, (2) the variation in the crystalline structure at the edges of the hexagonal boron nitride (h-BN) nanosheets, and (3) the basic electrical properties related to the BNNSs tunneling effect and electrical breakdown voltage. The nanoscale morphologies of BNNSs are characterized using scanning electron microscope (SEM) and high-resolution transmission electron microscope (HRTEM). The results show that each sample consisted of a number of transparent BNNSs that partially overlapped one another. Varying the deposition duration yielded different thicknesses of sample but did not affect the morphology, structure, and thickness of individual BNNSs pieces. Analysis of the SEM and HRTEM data revealed changes in the spatial period of the B3-N3 hexagonal structures and the interlayer distance at the edge of the BNNSs, which occurred due to the limited number of atomic layers and was confirmed further by x-ray diffraction (XRD) study. The experimental results clearly indicate that the values of the electrical conductivities of the super-thin BNNSs and the effect of temperature relied strongly on the direction of observation. PMID:26563901

  1. Raman spectroscopy of boron carbides and related boron-containing materials

    International Nuclear Information System (INIS)

    Raman spectra of crystalline boron, boron carbide, boron arsenide (B12As2), and boron phosphide (B12P2) are reported. The spectra are compared with other boron-containing materials containing the boron icosahedron as a structural unit. The spectra exhibit similar features some of which correlate with the structure of the icosahedral units of the crystals. The highest Raman lines appear to be especially sensitive to the B-B distance in the polar triangle of the icosahedron. Such Raman structural markers are potentially useful in efforts to tailor electronic properties of these high temperature semiconductors and thermoelectrics

  2. Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor.

    Science.gov (United States)

    Park, Nahee; Kang, Haeyong; Park, Jeongmin; Lee, Yourack; Yun, Yoojoo; Lee, Jeong-Ho; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    2015-11-24

    The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the V(G) sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics. PMID:26487348

  3. ANISOTROPIC POLARIZATION TENSORS FOR ELLIPSES AND ELLIPSOIDS

    Institute of Scientific and Technical Information of China (English)

    Hyeonbae Kang; Kyoungsun Kim

    2007-01-01

    In this paper we present a systematic way of computing the polarization tensors,anisotropic as well as isotropic, based on the boundary integral method. We then use this method to compute the anisotropic polarization tensor for ellipses and ellipsoids. The computation reveals the pair of anisotropy and ellipses which produce the same polarization tensors.

  4. Anisotropic weak Hardy spaces and interpolation theorems

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In this paper, the authors establish the anisotropic weak Hardy spaces associated with very general discrete groups of dilations. Moreover, the atomic decomposition theorem of the anisotropic weak Hardy spaces is also given. As some applications of the above results, the authors prove some interpolation theorems and obtain the boundedness of the singular integral operators on these Hardy spaces.

  5. Characterization of anisotropic acoustic metamaterial slabs

    Science.gov (United States)

    Park, Jun Hyeong; Lee, Hyung Jin; Kim, Yoon Young

    2016-01-01

    In an anisotropic acoustic metamaterial, the off-diagonal components of its effective mass density tensor should be considered in order to describe the anisotropic behavior produced by arbitrarily shaped inclusions. However, few studies have been carried out to characterize anisotropic acoustic metamaterials. In this paper, we propose a method that uses the non-diagonal effective mass density tensor to determine the behavior of anisotropic acoustic metamaterials. Our method accurately evaluates the effective properties of anisotropic acoustic metamaterials by separately dealing with slabs made of single and multiple unit cells along the thickness direction. To determine the effective properties, the reflection and transmission coefficients of an acoustic metamaterial slab are calculated, and then the wave vectors inside of the slab are determined using these coefficients. The effective material properties are finally determined by utilizing the spatial dispersion relation of the anisotropic acoustic metamaterial. Since the dispersion relation of an anisotropic acoustic metamaterial is explicitly used, its effective properties can be easily determined by only using a limited number of normal and oblique plane wave incidences into a metamaterial slab, unlike existing approaches requiring a large number of wave incidences. The validity of the proposed method is verified by conducting wave simulations for anisotropic acoustic metamaterial slabs with Z-shaped elastic inclusions of tilted principal material axes.

  6. Multidisciplinary approach to cylindrical anisotropic metamaterials

    International Nuclear Information System (INIS)

    Anisotropic characteristics of cylindrically corrugated microstructures are analyzed in terms of their acoustic and electromagnetic (EM) behavior paying special attention to their differences and similarities. A simple analytical model has been developed using effective medium theory to understand the anisotropic features of both types of waves in terms of radial and angular components of the wave propagation velocity. The anisotropic constituent parameters have been obtained by measuring the resonances of cylindrical cavities, as well as from numerical simulations. This permits one to characterize propagation of acoustic and EM waves and to compare the fundamental anisotropic features generated by the corrugated effective medium. Anisotropic coefficients match closely in both physics fields but other relevant parameters show significant differences in the behavior of both types of waves. (paper)

  7. Efficient Wavefield Extrapolation In Anisotropic Media

    KAUST Repository

    Alkhalifah, Tariq

    2014-07-03

    Various examples are provided for wavefield extrapolation in anisotropic media. In one example, among others, a method includes determining an effective isotropic velocity model and extrapolating an equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield. The effective isotropic velocity model can be based upon a kinematic geometrical representation of an anisotropic, poroelastic or viscoelastic wavefield. Extrapolating the equivalent propagation can use isotopic, acoustic or elastic operators based upon the determined effective isotropic velocity model. In another example, non-transitory computer readable medium stores an application that, when executed by processing circuitry, causes the processing circuitry to determine the effective isotropic velocity model and extrapolate the equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield. In another example, a system includes processing circuitry and an application configured to cause the system to determine the effective isotropic velocity model and extrapolate the equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield.

  8. Designing Anisotropic Inflation with Form Fields

    CERN Document Server

    Ito, Asuka

    2015-01-01

    We study inflation with anisotropic hair induced by form fields. In four dimensions, the relevant form fields are gauge (one-form) fields and two-form fields. Assuming the exponential form of potential and gauge kinetic functions, we find new exact power-law solutions endowed with anisotropic hair. We also explore the phase space of anisotropic inflation and find fixed points corresponding to the exact power-law solutions. Moreover, we perform the stability analysis around the fixed points to reveal the structure of the phase space. It turns out that one of the fixed points becomes an attractor and others (if any) are saddle points. In particular, the one corresponding to anisotropic inflation becomes an attractor when it exists. We also argue that various anisotropic inflation models can be designed by choosing coupling constants.

  9. Designing anisotropic inflation with form fields

    Science.gov (United States)

    Ito, Asuka; Soda, Jiro

    2015-12-01

    We study inflation with anisotropic hair induced by form fields. In four dimensions, the relevant form fields are gauge (one-form) fields and two-form fields. Assuming the exponential form of potential and gauge kinetic functions, we find new exact power-law solutions endowed with anisotropic hair. We also explore the phase space of anisotropic inflation and find fixed points corresponding to the exact power-law solutions. Moreover, we perform the stability analysis around the fixed points to reveal the structure of the phase space. It turns out that one of the fixed points becomes an attractor and others (if any) are saddle points. In particular, the one corresponding to anisotropic inflation becomes an attractor when it exists. We also argue that various anisotropic inflation models can be designed by choosing coupling constants.

  10. Linear triangle finite element formulation for multigroup neutron transport analysis with anisotropic scattering

    International Nuclear Information System (INIS)

    The discrete ordinates method is the most powerful and generally used deterministic method to obtain approximate solutions of the Boltzmann transport equation. A finite element formulation, utilizing a canonical form of the transport equation, is here developed to obtain both integral and pointwise solutions to neutron transport problems. The formulation is based on the use of linear triangles. A general treatment of anisotropic scattering is included by employing discrete ordinates-like approximations. In addition, multigroup source outer iteration techniques are employed to perform group-dependent calculations. The ability of the formulation to reduce substantially ray effects and its ability to perform streaming calculations are demonstrated by analyzing a series of test problems. The anisotropic scattering and multigroup treatments used in the development of the formulation are verified by a number of one-dimensional comparisons. These comparisons also demonstrate the relative accuracy of the formulation in predicting integral parameters. The applicability of the formulation to nonorthogonal planar geometries is demonstrated by analyzing a hexagonal-type lattice. A small, high-leakage reactor model is analyzed to investigate the effects of varying both the spatial mesh and order of angular quadrature. This analysis reveals that these effects are more pronounced in the present formulation than in other conventional formulations. However, the insignificance of these effects is demonstrated by analyzing a realistic reactor configuration. In addition, this final analysis illustrates the importance of incorporating anisotropic scattering into the finite element formulation. 8 tables, 29 figures

  11. Hexagonal phase produced by hot implants in silicon

    Science.gov (United States)

    Servidori, M.; Cannavò, S.; Ferla, G.; La Ferla, A.; Campisano, S. U.; Rimini, E.

    The damage produced by ion implantation of Kr + in Si substrates at temperatures in the 250-500°C range has been investigated by channeling effect technique and by transmission electron microscopy. Among the variety of defects present after hot implants the hexagonal silicon phase has been investigated. It is located mainly at the depth where the maximum of the energy density deposited into nuclear collisions occurs. The hexagonal phase is formed at target temperatures above 350°C and at fluences higher than 2 × 10 15/cm 2. With increasing temperature the size of the hexagonal silicon particles and the critical fluence for their formation increase. The hexagonal phase is also nucleated during high current-high dose implants of P +. In all the cases the phase disappears after prolonged annealing at T⩾700°C. The experimental region fluence-temperature for the hexagonal phase existence has been determined. The formation and thermal stability of the phase is qualitatively considered according to the existing models.

  12. Low pressure synthesis of boron nitride with(C2H5)2O·BF3 and Li3N precursor

    Institute of Scientific and Technical Information of China (English)

    WANG Shao-bo; XU Xiao-wei; FAN Hui-li; LI Yu-ping

    2005-01-01

    Cubic boron nitride(c-BN) was synthesized through benzene thermal method at a lower temperature of 300 ℃ by selecting liquid(C2H5)2O·BF3 and Li3N as reactants. Hexagonal boron nitride(h-BN) and orthorhombic boron nitride(o-BN) were also obtained. The samples were characterized by X-ray powder diffractometry and Fourier transformation infrared spectroscopy. The results show that all the BF3, BCl3 and BBr3 in the same family compounds can react with Li3N to synthesize BN since the strongest bond of B-F can be broken. Compared with BBr3, liquid (C2H5)2O·BF3 is cheaper, less toxic and more convenient to operate. Li3N not only provides nitrogen source but also has catalytic effect on accelerating the formation of c-BN at low temperature and pressure.

  13. Synthesis of boron nitride nanotubes by boron ink annealing.

    Science.gov (United States)

    Li, Lu Hua; Chen, Ying; Glushenkov, Alexey M

    2010-03-12

    Ball-milling and annealing is one effective method for the mass production of boron nitride nanotubes (BNNTs). We report that the method has been modified to a boron (B) ink annealing method. In this new process, the nanosize ball-milled B particles are mixed with metal nitrate in ethanol to form an ink-like solution, and then the ink is annealed in nitrogen-containing gas to form nanotubes. The new method greatly enhances the yield of BNNTs, giving a higher density of nanotubes. These improvements are caused by the addition of metal nitrate and ethanol, both of which can strongly boost the nitriding reaction, as revealed by thermogravimetric analysis. The size and structure of BNNTs can be controlled by varying the annealing conditions. This high-yield production of BNNTs in large quantities enables the large-scale application of BNNTs. PMID:20154372

  14. Synthesis of boron nitride nanotubes by boron ink annealing

    International Nuclear Information System (INIS)

    Ball-milling and annealing is one effective method for the mass production of boron nitride nanotubes (BNNTs). We report that the method has been modified to a boron (B) ink annealing method. In this new process, the nanosize ball-milled B particles are mixed with metal nitrate in ethanol to form an ink-like solution, and then the ink is annealed in nitrogen-containing gas to form nanotubes. The new method greatly enhances the yield of BNNTs, giving a higher density of nanotubes. These improvements are caused by the addition of metal nitrate and ethanol, both of which can strongly boost the nitriding reaction, as revealed by thermogravimetric analysis. The size and structure of BNNTs can be controlled by varying the annealing conditions. This high-yield production of BNNTs in large quantities enables the large-scale application of BNNTs.

  15. Synthesis of vinyl boronates from aldehydes by a practical boron-Wittig reaction.

    Science.gov (United States)

    Coombs, John R; Zhang, Liang; Morken, James P

    2015-04-01

    A highly stereoselective boron-Wittig reaction between stable and readily accessible 1,1-bis(pinacolboronates) and aldehydes furnishes a variety of synthetically useful di- and trisubstituted vinyl boronate esters. PMID:25799147

  16. Warm anisotropic inflationary universe model

    Energy Technology Data Exchange (ETDEWEB)

    Sharif, M.; Saleem, Rabia [University of the Punjab, Department of Mathematics, Lahore (Pakistan)

    2014-02-15

    This paper is devoted to the study of warm inflation using vector fields in the background of a locally rotationally symmetric Bianchi type I model of the universe. We formulate the field equations, and slow-roll and perturbation parameters (scalar and tensor power spectra as well as their spectral indices) in the slow-roll approximation. We evaluate all these parameters in terms of the directional Hubble parameter during the intermediate and logamediate inflationary regimes by taking the dissipation factor as a function of the scalar field as well as a constant. In each case, we calculate the observational parameter of interest, i.e., the tensor-scalar ratio in terms of the inflaton. The graphical behavior of these parameters shows that the anisotropic model is also compatible with WMAP7 and the Planck observational data. (orig.)

  17. Warm Anisotropic Inflationary Universe Model

    CERN Document Server

    Sharif, M

    2014-01-01

    This paper is devoted to study the warm inflation using vector fields in the background of locally rotationally symmetric Bianchi type I universe model. We formulate the field equations, slow-roll and perturbation parameters (scalar and tensor power spectra as well as their spectral indices) under slow-roll approximation. We evaluate all these parameters in terms of directional Hubble parameter during intermediate and logamediate inflationary regimes by taking the dissipation factor as a function of scalar field as well as a constant. In each case, we calculate the observational parameter of interest, i.e., tensor-scalar ratio in terms of inflation. The graphical behavior of these parameters shows that the anisotropic model is also compatible with WMAP7 and Planck observational data.

  18. I-Love-Q Anisotropically

    CERN Document Server

    Yagi, Kent

    2015-01-01

    Certain physical quantities that characterize neutron stars and quark stars (e.g. their mass, spin angular momentum and quadrupole moment) are interrelated in a way that is approximately insensitive to their internal structure. Such approximately universal relations are useful to break degeneracies in data analysis for future radio, X-ray and gravitational wave observations. Although the pressure inside compact stars is most likely nearly isotropic, certain scenarios have been put forth that suggest otherwise, for example due to phase transitions. We here investigate whether pressure anisotropy affects the approximate universal relations and whether it prevents their use in future observations. We achieve this by numerically constructing slowly-rotating and tidally-deformed, anisotropic, compact stars in General Relativity to third order in spin. We find that anisotropy affects the universal relations only weakly; the relations become less universal by a factor of 1.5-3 relative to the isotropic case, but rem...

  19. Gravitational Baryogenesis after Anisotropic Inflation

    CERN Document Server

    Fukushima, Mitsuhiro; Maeda, Kei-ichi

    2016-01-01

    The gravitational baryogensis may not generate a sufficient baryon asymmetry in the standard thermal history of the Universe when we take into account the gravitino problem. Hence it has been suggested that anisotropy of the Universe can enhance the generation of the baryon asymmetry through the increase of the time change of the Ricci scalar curvature. We study the gravitational baryogenesis in the presence of anisotropy, which is produced at the end of an anisotropic inflation. Although we confirm that the generated baryon asymmetry is enhanced compared with the original isotropic cosmological model, taking into account the constraint on the anisotropy by the recent CMB observations, we find that it is still difficult to obtain the observed baryon asymmetry only through the gravitational baryogenesis without suffering from the gravitino problem.

  20. Anisotropic invariance in minisuperspace models

    Science.gov (United States)

    Chagoya, Javier; Sabido, Miguel

    2016-06-01

    In this paper we introduce invariance under anisotropic transformations to cosmology. This invariance is one of the key ingredients of the theory of quantum gravity at a Lifshitz point put forward by Hořava. We find that this new symmetry in the minisuperspace introduces characteristics to the model that can be relevant in the ultraviolet regime. For example, by canonical quantization we find a Schrödinger-type equation which avoids the problem of frozen time in quantum cosmology. For simple cases we obtain solutions to this quantum equation in a Kantowski–Sachs (KS) minisuperspace. At the classical level, we study KS and Friedmann–Robertson–Walker cosmologies, obtaining modifications to the solutions of general relativity that can be relevant in the early Universe.

  1. Tunable complete photonic band gap in anisotropic photonic crystal slabs with non-circular air holes using liquid crystals

    Science.gov (United States)

    Fathollahi Khalkhali, T.; Bananej, A.

    2016-06-01

    In this study, we analyze the tunability of complete photonic band gap of square and triangular photonic crystal slabs composed of square and hexagonal air holes in anisotropic tellurium background with SiO2 as cladding material. The non-circular holes are infiltrated with liquid crystal. Using the supercell method based on plane wave expansion, we study the variation of complete band gap by changing the optical axis orientation of liquid crystal. Our numerical results show that noticeable tunability of complete photonic band gap can be obtained in both square and triangular structures with non-circular holes.

  2. New approach for direct chemical synthesis of hexagonal Co nanoparticles

    Science.gov (United States)

    Abel, Frank M.; Tzitzios, Vasilis; Hadjipanayis, George C.

    2016-02-01

    In this paper, we explore the possibility of producing hexagonal Cobalt nanoparticles, with high saturation magnetization by direct chemical synthesis. The nanoparticles were synthesized by reduction of anhydrous cobalt (II) chloride by NaBH4 in tetraglyme at temperatures in the range of 200-270 °C under a nitrogen-hydrogen atmosphere. The reactions were done at high temperatures to allow for the formation of as-made hexagonal cobalt. The size of the particles was controlled by the addition of different surfactants. The best magnetic properties so far were obtained on spherical hexagonal Co nanoparticles with an average size of 45 nm, a saturation magnetization of 143 emu/g and coercivity of 500 Oe. the saturation magnetization and coercivity were further improved by annealing the Co nanoparticles leading to saturation magnetization of 160 emu/g and coercivity of 540 Oe.

  3. Ab initio engineering of materials with stacked hexagonal tin frameworks

    Science.gov (United States)

    Shao, Junping; Beaufils, Clément; Kolmogorov, Aleksey N.

    2016-01-01

    The group-IV tin has been hypothesized to possess intriguing electronic properties in an atom-thick hexagonal form. An attractive pathway of producing sizable 2D crystallites of tin is based on deintercalation of bulk compounds with suitable tin frameworks. Here, we have identified a new synthesizable metal distannide, NaSn2, with a 3D stacking of flat hexagonal layers and examined a known compound, BaSn2, with buckled hexagonal layers. Our ab initio results illustrate that despite being an exception to the 8-electron rule, NaSn2 should form under pressures easily achievable in multi-anvil cells and remain (meta)stable under ambient conditions. Based on calculated Z2 invariants, the predicted NaSn2 may display topologically non-trivial behavior and the known BaSn2 could be a strong topological insulator. PMID:27387140

  4. Evolution of Moiré Profiles from van der Waals Superstructures of Boron Nitride Nanosheets.

    Science.gov (United States)

    Liao, Yunlong; Cao, Wei; Connell, John W; Chen, Zhongfang; Lin, Yi

    2016-01-01

    Two-dimensional (2D) van der Waals (vdW) superstructures, or vdW solids, are formed by the precise restacking of 2D nanosheet lattices, which can lead to unique physical and electronic properties that are not available in the parent nanosheets. Moiré patterns formed by the crystalline mismatch between adjacent nanosheets are the most direct features for vdW superstructures under microscopic imaging. In this article, transmission electron microscopy (TEM) observation of hexagonal Moiré patterns with unusually large micrometer-sized lateral areas (up to ~1 μm(2)) and periodicities (up to ~50 nm) from restacking of liquid exfoliated hexagonal boron nitride nanosheets (BNNSs) is reported. This observation was attributed to the long range crystallinity and the contaminant-free surfaces of these chemically inert nanosheets. Parallel-line-like Moiré fringes with similarly large periodicities were also observed. The simulations and experiments unambiguously revealed that the hexagonal patterns and the parallel fringes originated from the same rotationally mismatched vdW stacking of BNNSs and can be inter-converted by simply tilting the TEM specimen following designated directions. This finding may pave the way for further structural decoding of other 2D vdW superstructure systems with more complex Moiré images. PMID:27188697

  5. Anisotropic microstructure near the sun

    International Nuclear Information System (INIS)

    Radio scattering observations provide a means of measuring a two-dimensional projection of the three-dimensional spatial spectrum of electron density, i.e., in the plane perpendicular to the line of sight. Earlier observations have shown that the microstructure at scales of the order of 10 km becomes highly field-aligned inside of 10 R· [Armstrong et al., 1990]. Earlier work has also shown that density fluctuations at scales larger than 1000 km have a Kolmogorov spectrum, whereas the smaller scale structure has a flatter spectrum and is considerably enhanced above the Kolmogorov ''background'' [Coles et al., 1991]. Here we present new observations made during 1990 and 1992. These confirm the earlier work, which was restricted to one source on a few days, but they suggest that the anisotropy changes abruptly near 6 R· which was not clear in the earlier data. The axial ratio measurements are shown on Figure 1 below. The new observations were made with a more uniform sampling of the spatial plane. They show that contours of constant correlation are elliptical. This is apparently inconsistent with the spatial correlation of the ISEE-3 magnetic field which shows a 'Maltese Cross' shape [Matthaeus et al., 1990]. However this inconsistency may be only apparent: the magnetic field and density correlations need not have the same shape; the scale of the magnetic field correlations is at least 4 orders of magnitude larger; they are much further from the sun; and they are point measurements whereas ours are path-integrated. We also made two simultaneous measurements, at 10 R·, of the anisotropy on scales of 200 to 4000 km. Significant anisotropy was seen on the smaller scales, but the larger scale structure was essentially isotropic. This suggests that the process responsible for the anisotropic microstructure is independent of the larger scale isotropic turbulence. It is then tempting to speculate that the damping of this anisotropic process inside of 6 R· contributes to

  6. The Anisotropic Geometrodynamics For Cosmology

    Science.gov (United States)

    Siparov, Sergey V.

    2009-05-01

    The classical geometrodynamics (GRT) and its modern features based on the use of the Fridman-Robertson-Walker type metrics are still unable to explain several important issues of extragalactic observations like flat rotation curves of the spiral galaxies, Tully-Fisher law, globular clusters behavior in comparisson to that of the stars belonging to the galactic plane etc. The chalenging problem of the Universe expansion acceleration stemming from the supernovae observations demands the existence of the repulsion forces which brings one to the choice between the cosmological constant and some quintessence. The popular objects of discussion are now still dark (matter and energy), nevertheless, they are supposed to correspond to more than 95% of the Universe which seems to be far from satisfactory. According to the equivalence principle we can not experimentally distinguish between the inertial forces and the gravitational ones. Since there exist the inertial forces depending on velocity (Coriolis), it seems plausible to explore the velocity dependent gravitational forces. From the mathematical point of view it means that we should use the anisotropic metric. It immediately turns out that the expression for the Einstein-Hilbert action changes in a natural way - contrary to the cases of f(R)-theories, additional scalar fields, arbitrary MOND functions etc.. We use the linear approximation for the metric and derive the generalized geodesics and the equation for the gravity force that contains not only the Newton-Einstein term. The relation between the obtained results and those of Lense-Thirring approach are discussed. The resulting anisotropic geometrodynamics includes all the results of the GRT and is used to give the explanation to the problems mentioned above. One of the impressive consequences is the possibility to explain the observed Hubble red shift not by the Doppler effect as usually but by the gravitational red shift originating from the metric anisotropy.

  7. Nanodefects in ultrahard crystalline cubic boron nitride

    International Nuclear Information System (INIS)

    Cubic boron nitride (cBN), the second hardest known material after diamond, exhibits high thermal conductivity and an excellent ability to be n or p doped, which makes it a strong candidate for the next generation of high-temperature micro optical and micro electronic devices. According to recent studies, cBN exhibits a better resistance to radiation damage than diamond, which suggests potential applications in extreme radiation environments. Crystalline cBN powders of up to 0.5 mm linear size is obtained in a similar way as diamond, by catalytic conversion of hexagonal BN (hBN) to cBN at even higher pressures (> 5GPa) and temperatures (∼ 1900 K). Considering the essential role played by the nanodefects (point defects and impurities) in determining its physical properties, it is surprising how limited is the amount of published data concerning the properties of nanodefects in this material, especially by Electron Paramagnetic Resonance (EPR) spectroscopy, the most powerful method for identification and characterization of nanodefects in both insulators and semiconductors. This seems to be due mainly to the absence of natural cBN gems and the extreme difficulties in producing even mm3 sized synthetic crystals. We shall present our recent EPR studies on cBN crystalline powders, performed in a broad temperature range from room temperature (RT) down to 1.2 K on several sorts of large size cBN powder grits of yellow and amber color for industrial applications. Previous multifrequency (9.3 GHz and 95 GHz) EPR studies of brown to black cBN crystallites prepared with excess of boron, resulted in the discovery of two new types of paramagnetic point defects with different spectral properties, called the D1 and D2 centers. Our X(9.3 GHz)-band EPR investigations resulted in the observation in amber cBN crystalline powders of a spectrum with a strong temperature dependence of the lineshape. It was found that for high and low temperatures, respectively, the numerical

  8. Synthesis of Boron Nanowires, Nanotubes, and Nanosheets

    Directory of Open Access Journals (Sweden)

    Rajen B. Patel

    2015-01-01

    Full Text Available The synthesis of boron nanowires, nanotubes, and nanosheets using a thermal vapor deposition process is reported. This work confirms previous research and provides a new method capable of synthesizing boron nanomaterials. The materials were made by using various combinations of MgB2, Mg(BH42, MCM-41, NiB, and Fe wire. Unlike previously reported methods, a nanoparticle catalyst and a silicate substrate are not required for synthesis. Two types of boron nanowires, boron nanotubes, and boron nanosheets were made. Their morphology and chemical composition were determined through the use of scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. These boron-based materials have potential for electronic and hydrogen storage applications.

  9. Analysis of magnetron sputtered boron oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Buc, Dalibor [Slovak University of Technology in Bratislava (Slovakia); Bello, Igor [City University of Hong Kong, Kowloon, Hong Kong (China); Caplovicova, Maria [Comenius University in Bratislava (Slovakia); Mikula, Milan; Kovac, Jaroslav; Hotovy, Ivan [Slovak University of Technology in Bratislava (Slovakia); Chong, Yat Min [City University of Hong Kong, Kowloon, Hong Kong (China); Siu, Guei Gu [City University of Hong Kong, Kowloon, Hong Kong (China)], E-mail: apggsiu@cityu.edu.hk

    2007-10-15

    Boron oxide films were grown on silicon substrates by radio-frequency (rf) unbalanced magnetron sputtering of a boron target in argon-oxygen gas mixtures with different compositions. Microscopic analyses show that overall boron oxide films are amorphous. The film prepared at oxygen/argon flow rate ratio > 0.05 developed large crystallites of boric acid in localize areas of amorphous boron oxide matrices. These crystallites were unstable and at electron microscopic analysis they continuously transformed to a cubic HBO{sub 2} phase and then completely vanished leaving an underlying amorphous boron oxide film behind. The analyses indicate the coexistence of B{sub 6}O, HBO{sub 2} crystallites and amorphous boron oxide matrices. Fourier transform infrared (FTIR) spectra revealed spectral bands of BOH, BO, BOB and BH groups. Nanohardness and elastic modulus of a film prepared at low oxygen concentration approach 30 and 300 GPa, respectively. These parameters however vary with deposition conditions.

  10. Microwave sintering of boron carbide composites

    International Nuclear Information System (INIS)

    Boron carbide is an important ceramic material because of its high hardness and low specific gravity. it is used for applications involving impact and wear resistance. The disadvantages of boron carbide materials are difficulty in fabrication and sensitivity to brittle fracture. These problems are significantly reduced by production of cermets based on boron carbide and aluminum or aluminum alloys. Microwave heating of boron carbide materials results in ultrarapid heating and high temperatures. Therefore, a finer microstructure is obtained. The objective of this work was to define a technology that would allow the manufacture of boron carbide ceramics having mechanical properties similar to those exhibited by hot-pressed specimens. microwave heating would be used for the densification step. Mixtures of boron carbide and aluminum were considered for this research because aluminum simultaneously acts as a sintering aid and introduces phases that contribute to toughness enhancement

  11. Prediction of boron carbon nitrogen phase diagram

    Science.gov (United States)

    Yao, Sanxi; Zhang, Hantao; Widom, Michael

    We studied the phase diagram of boron, carbon and nitrogen, including the boron-carbon and boron-nitrogen binaries and the boron-carbon-nitrogen ternary. Based on the idea of electron counting and using a technique of mixing similar primitive cells, we constructed many ''electron precise'' structures. First principles calculation is performed on these structures, with either zero or high pressures. For the BN binary, our calculation confirms that a rhmobohedral phase can be stablized at high pressure, consistent with some experimental results. For the BCN ternary, a new ground state structure is discovered and an Ising-like phase transition is suggested. Moreover, we modeled BCN ternary phase diagram and show continuous solubility from boron carbide to the boron subnitride phase.

  12. CVD-produced boron filaments

    Science.gov (United States)

    Wawner, F. E.; Debolt, H. E.; Suplinskas, R. D.

    1980-01-01

    A technique for producing boron filaments with an average tensile strength of 6.89 GPa has been developed which involves longitudinal splitting of the filament and core (substrate) removal by etching. Splitting is accomplished by a pinch wheel device which continuously splits filaments in lengths of 3.0 m by applying a force to the side of the filament to create a crack which is then propagated along the axis by a gentle sliding action. To facilitate the splitting, a single 10 mil tungsten substrate is used instead of the usual 0.5 mil substrate. A solution of hot 30% hydrogen peroxide is used to remove the core without attacking the boron. An alternative technique is to alter the residual stress by heavily etching the filament. Average strengths in the 4.83-5.52 GPa range have been obtained by etching an 8 mil filament to 4 mil.

  13. Boron clusters in luminescent materials.

    Science.gov (United States)

    Mukherjee, Sanjoy; Thilagar, Pakkirisamy

    2016-01-21

    In recent times, luminescent materials with tunable emission properties have found applications in almost all aspects of modern material sciences. Any discussion on the recent developments in luminescent materials would be incomplete if one does not account for the versatile photophysical features of boron containing compounds. Apart from triarylboranes and tetra-coordinate borate dyes, luminescent materials consisting of boron clusters have also found immense interest in recent times. Recent studies have unveiled the opportunities hidden within boranes, carboranes and metalloboranes, etc. as active constituents of luminescent materials. From simple illustrations of luminescence, to advanced applications in LASERs, OLEDs and bioimaging, etc., the unique features of such compounds and their promising versatility have already been established. In this review, recent revelations about the excellent photophysical properties of such materials are discussed. PMID:26574714

  14. Thermal conductivity of polymer composites with oriented boron nitride

    International Nuclear Information System (INIS)

    Highlights: • Thermal conductivity depended on the orientation of BN in the polymer matrices. • Hexagonal boron nitride (BN) particles were treated by C27H27N3O2 and C14H6O8. • Amphiphilic-agent-treated BN particles are more easily oriented in the composite. • BN/PVA composites with C14H6O8-treated BN showed the highest thermal conductivity. • Thermal conductivity of the composites was compared with several theoretical models. - Abstract: Thermal conductivity of boron nitride (BN) with polyvinyl alcohol (PVA) and/or polyvinyl butyral (PVB) was investigated as a function of the degree of BN orientation, the numbers of hydroxyl groups in the polymer matrices and the amphiphilic agents used. The composites with in-plane orientation of BN showed a higher thermal conductivity than the composites with out-of-plane orientation of BN due to the increase of thermal pathway. For a given BN content, the composites with in-plane orientation of BN/PVA showed higher thermal conductivity than the composites with in-plane orientation of BN/PVB. This result could be attributed to the improved degree of orientation of BN, caused by a larger number of hydroxyl groups being present. Those treated with C14H6O8 amphiphilic agent demonstrated a higher thermal conductivity than those treated by C27H27N3O2. The measured thermal conductivity of the composites was compared with that predicted by the several theoretical models

  15. First principles DFT investigation of yttrium-decorated boron-nitride nanotube: Electronic structure and hydrogen storage

    International Nuclear Information System (INIS)

    The electronic structure and hydrogen storage capability of Yttrium-doped BNNTs has been theoretically investigated using first principles density functional theory (DFT). Yttrium atom prefers the hollow site in the center of the hexagonal ring with a binding energy of 0.8048eV. Decorating by Y makes the system half-metallic and magnetic with a magnetic moment of 1.0µB. Y decorated Boron-Nitride (8,0) nanotube can adsorb up to five hydrogen molecules whose average binding energy is computed as 0.5044eV. All the hydrogen molecules are adsorbed with an average desorption temperature of 644.708 K. Taking that the Y atoms can be placed only in alternate hexagons, the implied wt% comes out to be 5.31%, a relatively acceptable value for hydrogen storage materials. Thus, this system can serve as potential hydrogen storage medium

  16. Conduction mechanism in boron carbide

    Science.gov (United States)

    Wood, C.; Emin, D.

    1984-01-01

    Electrical conductivity, Seebeck-coefficient, and Hall-effect measurements have been made on single-phase boron carbides, B(1-x)C(x), in the compositional range from 0.1 to 0.2 X, and between room temperature and 1273 K. The results indicate that the predominant conduction mechanism is small-polaron hopping between carbon atoms at geometrically inequivalent sites.

  17. Sintering behavior of boron carbide

    International Nuclear Information System (INIS)

    Pressureless sintering behavior of boron carbide (B4C) in argon was studied, with change in time and temperature, using carbon as sintering aid. Carbon was added via fenolic resin, acting also as a binder. After isostatic pressing the specimens were sintered in a graphite furnace at 19600C/1h, 21600C/15 minutes and 1h and 22000C/1h. The achieved density was 97% of the theoretical. Some mechanical properties and microstructural aspects have been evaluated. (author)

  18. Boron Enrichment in Martian Clay

    OpenAIRE

    James D Stephenson; Lydia J Hallis; Kazuhide Nagashima; Freeland, Stephen J.

    2013-01-01

    We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest minera...

  19. Mid-infrared polaritonic coupling between boron nitride nanotubes and graphene.

    Science.gov (United States)

    Xu, Xiaoji G; Jiang, Jian-Hua; Gilburd, Leonid; Rensing, Rachel G; Burch, Kenneth S; Zhi, Chunyi; Bando, Yoshio; Golberg, Dmitri; Walker, Gilbert C

    2014-11-25

    Boron nitride (BN) is considered to be a promising substrate for graphene-based devices in part because its large band gap can serve to insulate graphene in layered heterostructures. At mid-infrared frequencies, graphene supports surface plasmon polaritons (SPPs), whereas hexagonal-BN (h-BN) is found to support surface phonon polaritons (SPhPs). We report on the observation of infrared polaritonic coupling between graphene SPPs and boron nitride nanotube (BNNT) SPhPs. Infrared scattering type scanning near-field optical microscopy is used to obtain spatial distribution of the two types of polaritons at the nanoscale. The observation suggests that those polaritons interact at the nanoscale in a one-dimensional/two-dimensional (1D/2D) geometry, exchanging energy in a nonplanar configuration at the nanoscale. Control of the polaritonic interaction is achieved by adjustment of the graphene Fermi level through voltage gating. Our observation suggests that boron nitride nanotubes and graphene can interact at mid-infrared frequencies and coherently exchange their energies at the nanoscale through the overlap of mutual electric near field of surface phonon polaritons and surface plasmon polaritons. Such interaction enables the design of nano-optical devices based on BNNT-graphene polaritonics in the mid-infrared range. PMID:25365544

  20. Kinetics and film properties of boron nitride derived from trimethoxyborane/ammonia by chemical vapor deposition

    International Nuclear Information System (INIS)

    The kinetics of the CVD of boron nitride from trimethoxyborane (TMOB) and ammonia (NH3) under atmospheric pressure was investigated by varying the following process parameters: temperature, residence time of the reactants, molar fraction of TMOB, and the NH3/TMOB ratio, γ. A kinetic power law equation was derived, that describes the experimental results with good accuracy. The reaction order with respect to TMOB is found to be 0.9 and -0.2 with respect to NH3. Between 800 C and 950 C, the deposition rate is controlled by the surface reaction kinetics with apparent activation energy of 115.1 kJ mol-1. The deposited BN films were characterized by IR spectroscopy, Raman spectroscopy, and X-ray diffraction (XRD). The microstructure of the deposits depends on the nature of the substrates used. Turbostratic boron nitride (t-BN) was deposited on graphite, and hexagonal boron nitride (h-BN) on alumina substrates. X-ray photoelectron spectroscopy (XPS) analyses show nearly stoichiometric BN films for deposition temperatures in the range 850-950 C for high amounts of ammonia (100< γ <150) in the feed gas. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  1. Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

    Science.gov (United States)

    Darwish, Ahmed A.; Fadlallah, Mohamed M.; Badawi, Ashraf; Maarouf, Ahmed A.

    2016-07-01

    Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  2. 机械法合成BN纳米管%Mechanosynthesis of Boron Nitride Nanotubes

    Institute of Scientific and Technical Information of China (English)

    籍凤秋; 曹传宝; 徐红; 杨子光

    2006-01-01

    Boron nitride nanotubes (BN-NTs) with pure hexagonal BN phase have been synthesized by heating ball-milled boron powders in flowing ammonia gas at a temperature of 1200℃. The as-synthesized products were characterized by X-ray powder diffraction, transmission electron microscopy, high-resolution transmission electron microscopy, and electron energy loss spectroscopy (EELS). The diameters of nanotubes are in the rage of 40120nm and the lengths are more than 10μm. EELS result identifies that the ratio of boron and nitrogen is almost 1:1. The growth temperature is a crucial growth parameter in controlling the structure and crystalline of BN-NTs. The nanotubes grown at 1100℃ possesses of a bamboo-like structure, while as the temperature increased to 1200℃, most of the nanotubes exhibited a cylindrical structure. In addition, changing the heating time can control the size of the nanotubes. The gas atmosphere has influence on the yield of BN-NTs during heating process. When heating atmosphere was replaced by nitrogen, the yield of nanotubes was remarkably decreased.

  3. Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

    CERN Document Server

    Nistor, L C; Dinca, G; Georgeoni, P; Landuyt, J V; Manfredotti, C; Vittone, E

    2002-01-01

    High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp sup 3 bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m sup - sup 2 is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD di...

  4. The mechanism for low temperature growth of vertically aligned boron nitride nanotubes

    Science.gov (United States)

    Wang, Jiesheng; Xie, Ming; Khin Yap, Yoke

    2006-03-01

    Boron nitride nanotubes (BNNTs) are well recognized as the candidate that will complement the uses of carbon nanotubes (CNTs) in nanotechnology. However, high growth temperatures (>1100 ^oC), low production yield, and impurities have prevented effective synthesis and applications of boron nitride nanotubes (BNNTs) in the past ten years. For the first time, we have succeeded on the growth of pure BNNTs on substrates [1, 2]. This has been realized based on our experiences of growing CNTs and boron nitride (BN) phases (cubic phase BN, hexagonal phase BN). According to our hypothetical model, energetic growth species play an important role on controlling the phases of BN solids. We have experimentally verified that BNNTs can be grown by energetic growth species by a plasma-enhanced pulsed laser deposition (PEPLD) technique. These BNNTs can be grown vertically aligned into arrays of regular patterns at 600 ^oC, and can be used for applications without purification. The growth mechanism of thee BNNTs will be discussed. [1]. Yap et al., Bull APS Vol 50, 1346-1347 (March 2005). [2]. Wang et al., nano Letters (2005) ASAP, DOI: 10.1021/nl051859n.

  5. Influence of trace boron on the morphology of titanium carbide in an Al-Ti-C-B master alloy

    International Nuclear Information System (INIS)

    The influence of trace B (boron) element on the morphology of TiC crystals in an Al-Ti-C-B master alloy prepared by a melt reaction method has been investigated in this paper. The morphology and chemical composition of TiC crystals are characterized from X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersion spectroscopy (EDS), transmission electron microscopy (TEM) and selected area electron diffraction (SAED) analyses. It is found that both TiC hexagonal platelet and TiC polyhedron have formed in the Al-Ti-C-B master alloy. Furthermore, a trace amount of B element is found in TiC hexagonal platelets evidenced by the EDS spectrum. However, the SAED pattern confirms that the crystal structure of TiC has not changed. The formation and growth mechanism of the TiC hexagonal platelet have been discussed. It is considered that the trace B element in the aluminum melt promotes the transformation of TiC from polyhedron to hexagonal platelet at the initial growth stage.

  6. Boron removal from geothermal waters by electrocoagulation

    International Nuclear Information System (INIS)

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm2, but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%

  7. Boron removal from geothermal waters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey); Yilmaz, M. Tolga; Paluluoglu, Cihan [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)

    2008-05-01

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm{sup 2}, but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%.

  8. Boron deposition from fused salts. Final report

    International Nuclear Information System (INIS)

    A partial evaluation of the feasibility of a process to electrodeposit pure coherent coatings of elemental boron from molten fluorides has been performed. The deposit produced was powdery and acicular, unless the fluoride melt was purified to have very low oxygen concentration. When the oxygen activity was reduced in the melt by addition of crystalline elemental boron, dense, amorphous boron deposit was produced. The boron deposits produced had cracks but were otherwise pure and dense and ranged up to 0.35 mm thick. Information derived during this project suggests that similar deposits might be obtained crack-free up to 1.00 mm thick by process modifications and improvements

  9. A new algorithm for anisotropic solutions

    Indian Academy of Sciences (India)

    M Chaisi; S D Maharaj

    2006-02-01

    We establish a new algorithm that generates a new solution to the Einstein field equations, with an anisotropic matter distribution, from a seed isotropic solution. The new solution is expressed in terms of integrals of an isotropic gravitational potential; and the integration can be completed exactly for particular isotropic seed metrics. A good feature of our approach is that the anisotropic solutions necessarily have an isotropic limit. We find two examples of anisotropic solutions which generalise the isothermal sphere and the Schwarzschild interior sphere. Both examples are expressed in closed form involving elementary functions only.

  10. Anisotropic inflation in Gauss-Bonnet gravity

    CERN Document Server

    Lahiri, Sayantani

    2016-01-01

    We study anisotropic inflation with Gauss-Bonnet correction in presence of a massless vector field. In this scenario, exact anisotropic power-law inflation is realized when the inflaton potential, gauge coupling function and the Gauss-Bonnet coupling are exponential functions. We show that anisotropy becomes proportional to two slow-roll parameters of the theory and hence gets enhanced in presence of quadratic curvature corrections. The stability analysis reveals that anisotropic power-law solutions remain stable over a substantially large parameter region.

  11. Multiple Scattering Using Parallel Volume Integral Equation Method: Interaction of SH Waves with Multiple Multilayered Anisotropic Elliptical Inclusions

    Directory of Open Access Journals (Sweden)

    Jungki Lee

    2015-01-01

    Full Text Available The parallel volume integral equation method (PVIEM is applied for the analysis of elastic wave scattering problems in an unbounded isotropic solid containing multiple multilayered anisotropic elliptical inclusions. This recently developed numerical method does not require the use of Green’s function for the multilayered anisotropic inclusions; only Green’s function for the unbounded isotropic matrix is needed. This method can also be applied to solve general two- and three-dimensional elastodynamic problems involving inhomogeneous and/or multilayered anisotropic inclusions whose shape and number are arbitrary. A detailed analysis of the SH wave scattering is presented for multiple triple-layered orthotropic elliptical inclusions. Numerical results are presented for the displacement fields at the interfaces for square and hexagonal packing arrays of triple-layered elliptical inclusions in a broad frequency range of practical interest. It is necessary to use standard parallel programming, such as MPI (message passing interface, to speed up computation in the volume integral equation method (VIEM. Parallel volume integral equation method as a pioneer of numerical analysis enables us to investigate the effects of single/multiple scattering, fiber packing type, fiber volume fraction, single/multiple layer(s, multilayer’s shape and geometry, isotropy/anisotropy, and softness/hardness of the multiple multilayered anisotropic elliptical inclusions on displacements at the interfaces of the inclusions.

  12. Bonding distances as Exact Sums of the Radii of the Constituent Atoms in Nanomaterials - Boron Nitride and Coronene

    CERN Document Server

    Heyrovska, Raji

    2010-01-01

    This paper presents for the first time the exact structures at the atomic level of two important nanomaterials, boron nitride and coronene. Both these compounds are hexagonal layer structures similar to graphene in two dimensions and to graphite in three-dimensions. However, they have very different properties: whereas graphene is a conductor, h-BN is an electrical insulator and coronene is a polycyclic aromatic hydrocarbon of cosmological interest. The atomic structures presented here are based on bond lengths as the sums of the atomic radii.

  13. Polymer-Derived Boron Nitride: A Review on the Chemistry, Shaping and Ceramic Conversion of Borazine Derivatives

    OpenAIRE

    Samuel Bernard; Philippe Miele

    2014-01-01

    Boron nitride (BN) is a III-V compound which is the focus of important research since its discovery in the early 19th century. BN is electronic to carbon and thus, in the same way that carbon exists as graphite, BN exists in the hexagonal phase. The latter offers an unusual combination of properties that cannot be found in any other ceramics. However, these properties closely depend on the synthesis processes. This review states the recent developments in the preparation of BN through the che...

  14. Variably saturated flow described with the anisotropic Lattice Boltzmann methods

    OpenAIRE

    Ginzburg, I.

    2006-01-01

    This paper addresses the numerical solution of highly nonlinear parabolic equations with Lattice Boltzmann techniques. They are first developed for generic advection and anisotropic dispersion equations (AADE). Collision configurations handle the anisotropic diffusion forms by using either anisotropic eigenvalue sets or anisotropic equilibrium functions. The coordinate transformation from the orthorhombic (rectangular) discretization grid to the cuboid computational grid is equivalen...

  15. Method for determination of boron carbide in wurtzite-like boron nitride

    International Nuclear Information System (INIS)

    A technique for increase of sensitivity and analysis accuracy while boron carbide determination in wurtzite-like boron nitride is proposed. Boron nitride with an addition of boron carbide is bjected to treatment by the mixture of concentrated sulphuric acid and 0.1-0.5 N of porassium bichromate solution at ratio of (2-1):1 at the temperature of mixture boiling. Boron carboide content is calculated according to the quantity of restored Cr(3+), which is determined by titration of Cr(6+) excess with the Mohr's salt solution

  16. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Durmazucar, Hasan H.; Guenduez, Guengoer E-mail: ggunduz@metu.edu.tr

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  17. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    International Nuclear Information System (INIS)

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed

  18. Generation and Characterization of Anisotropic Microstructures in Rare Earth-Iron-Boron Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Oster, Nathaniel [Iowa State Univ., Ames, IA (United States)

    2012-01-01

    The goal of this work is to investigate methods in which anisotropy could be induced in fine-grained alloys. We have identified two general processing routes to creating a fine, textured microstructure: form an amorphous precursor and devitrify in a manner that induces texture or form the fine, textured microstructure upon cooling directly from the liquid state. Since it is possible to form significant amounts of amorphous material in RE-Fe-B alloys, texture could be induced through biasing the orientationof the crystallites upon crystallization of the amorphous material. One method of creating this bias is to form glassy material and apply uniaxial pressure during crystallization. Experiments on this are presented. All of the work presented here utilizes melt-spinning, either to create precursor material, or to achieve a desired final microstructure. To obtain greater control of the system to process these materials, a study was done on the effects of heating the wheel and modifying the wheel’s surface finish on glass formation and phase selection. The second general approach—creating the desired microstructure directly from the liquid—can be done through directional rapid solidification. In particular, alloys melt-spun at low tangential wheel speeds often display directional columnar growth through a portion of the ribbon. By refining and stabilizing the columnar growth, a highly textured fine microstructure is achieved. The effects of adding a segregating element (Ag) on the columnar growth are characterized and presented.

  19. Lithium intercalation in perovskite and hexagonal tungsten bronze derivatives

    International Nuclear Information System (INIS)

    Lithium has been intercalated chemically and electrochemically in LnNb3O9 (Ln = La,Nd) perovskite-type phases and LiW3O9F which can be considered as a hexagonal tungsten bronze derivative. The crystallographic formula of the LnNb3O9 starting material is described

  20. Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires

    KAUST Repository

    Wang, Ping

    2015-12-22

    Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001 ̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about two-fold larger in magnitude than those on the (0001 ̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.