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Sample records for anisotropic hexagonal boron

  1. Anisotropic Hexagonal Boron Nitride Nanomaterials - Synthesis and Applications

    Energy Technology Data Exchange (ETDEWEB)

    Han,W.Q.

    2008-08-01

    Boron nitride (BN) is a synthetic binary compound located between III and V group elements in the Periodic Table. However, its properties, in terms of polymorphism and mechanical characteristics, are rather close to those of carbon compared with other III-V compounds, such as gallium nitride. BN crystallizes into a layered or a tetrahedrally linked structure, like those of graphite and diamond, respectively, depending on the conditions of its preparation, especially the pressure applied. Such correspondence between BN and carbon readily can be understood from their isoelectronic structures [1, 2]. On the other hand, in contrast to graphite, layered BN is transparent and is an insulator. This material has attracted great interest because, similar to carbon, it exists in various polymorphic forms exhibiting very different properties; however, these forms do not correspond strictly to those of carbon. Crystallographically, BN is classified into four polymorphic forms: Hexagonal BN (h-BN) (Figure 1(b)); rhombohedral BN (r-BN); cubic BN (c-BN); and wurtzite BN (w-BN). BN does not occur in nature. In 1842, Balmain [3] obtained BN as a reaction product between molten boric oxide and potassium cyanide under atmospheric pressure. Thereafter, many methods for its synthesis were reported. h-BN and r-BN are formed under ambient pressure. c-BN is synthesized from h-BN under high pressure at high temperature while w-BN is prepared from h-BN under high pressure at room temperature [1]. Each BN layer consists of stacks of hexagonal plate-like units of boron and nitrogen atoms linked by SP{sup 2} hybridized orbits and held together mainly by Van der Waals force (Fig 1(b)). The hexagonal polymorph has two-layered repeating units: AA'AA'... that differ from those in graphite: ABAB... (Figure 1(a)). Within the layers of h-BN there is coincidence between the same phases of the hexagons, although the boron atoms and nitrogen atoms are alternatively located along the c

  2. Bandgap engineered graphene and hexagonal boron nitride

    Indian Academy of Sciences (India)

    In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a self-consistent solution inside the non-equilibrium Green's ...

  3. Inter-layer potential for hexagonal boron nitride

    Science.gov (United States)

    Leven, Itai; Azuri, Ido; Kronik, Leeor; Hod, Oded

    2014-03-01

    A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

  4. Inter-layer potential for hexagonal boron nitride

    International Nuclear Information System (INIS)

    Leven, Itai; Hod, Oded; Azuri, Ido; Kronik, Leeor

    2014-01-01

    A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures

  5. Method for exfoliation of hexagonal boron nitride

    Science.gov (United States)

    Lin, Yi (Inventor); Connell, John W. (Inventor)

    2012-01-01

    A new method is disclosed for the exfoliation of hexagonal boron nitride into mono- and few-layered nanosheets (or nanoplatelets, nanomesh, nanoribbons). The method does not necessarily require high temperature or vacuum, but uses commercially available h-BN powders (or those derived from these materials, bulk crystals) and only requires wet chemical processing. The method is facile, cost efficient, and scalable. The resultant exfoliated h-BN is dispersible in an organic solvent or water thus amenable for solution processing for unique microelectronic or composite applications.

  6. Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

    Energy Technology Data Exchange (ETDEWEB)

    Marquez Rossy, Andres E [ORNL; Armstrong, Beth L [ORNL; Elliott, Amy M [ORNL; Lara-Curzio, Edgar [ORNL

    2017-05-12

    The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to an azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.

  7. Bandgap engineered graphene and hexagonal boron nitride for ...

    Indian Academy of Sciences (India)

    In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a self-consistent solution inside the non-equilibrium Green's ...

  8. Manipulation of enhanced absorption with tilted hexagonal boron nitride slabs

    Science.gov (United States)

    Wu, Xiaohu; Fu, Ceji

    2018-04-01

    The wavevector of electromagnetic wave propagation in a hexagonal boron nitride (hBN) slab can be controlled by tilting its optical axis. This property can be used to manipulate the absorption in a hBN slab. By carefully analyzing the dependence of the absorptivity of a thin hBN slab on the tilted angle of its optical axis, we propose a structure that can realize great absorptivity enhancement in a band by stacking hBN slabs of different tilted angles. Our numerical results show that the absorptivity of a structure made of 91 stacked hBN slabs can be achieved higher than 0.94 in the wavenumber range from 1367 to 1580 cm-1 when the tilted angles of the slabs are properly arranged. The strong absorption is attributed to the combination of impedance matching at the slab interfaces and enlarged wavevectors in the slabs. This work reveals a novel way to realize strong absorption with anisotropic materials for applications in areas such as thermal radiative energy harvesting and conversion.

  9. Response of alpha particles in hexagonal boron nitride neutron detectors

    Science.gov (United States)

    Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2017-05-01

    Thermal neutron detectors were fabricated from 10B enriched h-BN epilayers of different thicknesses. The charge carrier generation and energy loss mechanisms as well as the range of alpha daughter particles generated by the nuclear reaction between thermal neutrons and 10B atoms in hexagonal boron nitride (h-BN) thermal neutron detectors have been investigated via their responses to alpha particles from a 210Po source. The ranges of alpha particles in h-BN were found to be anisotropic, which increase with the angle (θ) between the trajectory of the alpha particles and c-axis of the h-BN epilayer following (cos θ)-1 and are 4.6 and 5.6 μm, respectively, for the alpha particles with energies of 1.47 MeV and 1.78 MeV at θ = 0. However, the energy loss of an alpha particle inside h-BN is determined by the number of layers it passes through with a constant energy loss rate of 107 eV per layer due to the layered structure of h-BN. Roughly 5 electron-hole pairs are generated when an alpha particle passes through each layer. It was also shown that the durability of h-BN thermal neutron detectors is excellent based on the calculation of boron vacancies generated (or 10B atoms consumed) by neutron absorption. The results obtained here provide useful insights into the mechanisms of energy loss and charge carrier generation inside h-BN detectors and possible approaches to further improve the overall performance of h-BN thermal neutron detectors, as well as the ultimate spatial resolution of future neutron imaging devices or cameras based on h-BN epilayers.

  10. Spin transport in fully hexagonal boron nitride encapsulated graphene

    NARCIS (Netherlands)

    Gurram, M.; Omar, S.; Zihlmann, S.; Makk, P.; Schoenenberger, C.; van Wees, B. J.

    2016-01-01

    We study fully hexagonal boron nitride (hBN) encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes: thick-hBN flake as a bottom gate dielectric substrate which masks the charge impurities from SiO2/Si

  11. Bandgap engineered graphene and hexagonal boron nitride for ...

    Indian Academy of Sciences (India)

    Low-dimensional nanomaterials, such as monolayer graphene and hexagonal boron nitride (h-BN), have the ... tures containing a mixture of carbon and h-BN nanodomains were of great interest for device engineers to ... nique. Another important progress towards graphene device fabrication is doping graphene using ...

  12. Electrically dependent bandgaps in graphene on hexagonal boron nitride

    International Nuclear Information System (INIS)

    Kaplan, D.; Swaminathan, V.; Recine, G.

    2014-01-01

    We present first-principles calculations on the bandgap of graphene on a layer of hexagonal boron nitride in three different stacking configurations. Relative stability of the configurations is identified and bandgap tunability is demonstrated through the application of an external, perpendicularly applied electric field. We carefully examine the bandgap's sensitivity to both magnitude of the applied field as well as separation between the graphene and hexagonal boron nitride layers. Features of the band structure are examined and configuration-dependent relationships between the field and bandgap are revealed and elucidated through the atom-projected density of states. These findings suggest the potential for opening and modulating a bandgap in graphene as high as several hundred meV

  13. Electrically dependent bandgaps in graphene on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Kaplan, D., E-mail: daniel.b.kaplan.civ@mail.mil; Swaminathan, V. [U.S. Army RDECOM-ARDEC, Fuze Precision Armaments and Technology Directorate, Picatinny Arsenal, New Jersey 07806 (United States); Recine, G. [Department of Applied Physics, Polytechnic Institute of New York University, Brooklyn, New York 11201 (United States); Department of Physics and Engineering Physics, Fordham University, Bronx, New York 10458 (United States)

    2014-03-31

    We present first-principles calculations on the bandgap of graphene on a layer of hexagonal boron nitride in three different stacking configurations. Relative stability of the configurations is identified and bandgap tunability is demonstrated through the application of an external, perpendicularly applied electric field. We carefully examine the bandgap's sensitivity to both magnitude of the applied field as well as separation between the graphene and hexagonal boron nitride layers. Features of the band structure are examined and configuration-dependent relationships between the field and bandgap are revealed and elucidated through the atom-projected density of states. These findings suggest the potential for opening and modulating a bandgap in graphene as high as several hundred meV.

  14. Synthesis of hexagonal boron nitride graphene-like few layers

    Science.gov (United States)

    Yuan, S.; Toury, B.; Journet, C.; Brioude, A.

    2014-06-01

    Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction.Self-standing highly crystallized hexagonal boron nitride (h-BN) mono-, bi- and few-layers have been obtained for the first time via the Polymer Derived Ceramics (PDCs) route by adding lithium nitride (Li3N) micropowders to liquid-state polyborazylene (PBN). Incorporation of Li3N as a crystallization promoter allows the onset of crystallization of h-BN at a lower temperature (1200 °C) than under classical conditions (1800 °C). The hexagonal structure was confirmed by both electron and X-ray diffraction. Electronic supplementary information (ESI) available: See DOI: 10.1039/c4nr01017e

  15. Delamination of hexagonal boron nitride in a stirred media mill

    Energy Technology Data Exchange (ETDEWEB)

    Damm, C., E-mail: cornelia.damm@fau.de; Koerner, J.; Peukert, W., E-mail: Wolfgang.Peukert@lfg.fau.de [University Erlangen-Nuremberg, Institute of Particle Technology (Germany)

    2013-04-15

    A scalable process for delamination of hexagonal boron nitride in an aqueous solution of the non-ionic surfactant TWEEN85 using a stirred media mill is presented. The size of the ZrO{sub 2} beads used as grinding media governs the dimensions of the ground boron nitride particles as atomic force microscopic investigations (AFM) reveal: the mean flakes thickness decreases from 3.5 to 1.5 nm and the ratio between mean flake area and mean flake thickness increases from 2,200 to 5,800 nm if the grinding media size is reduced from 0.8 to 0.1 mm. This result shows that a high number of stress events in combination with low stress energy (small grinding media) facilitate delamination of the layered material whereas at high stress energies in combination with a low number of stress events (large grinding media) breakage of the layers dominates over delamination. The results of particle height analyses by AFM show that few-layer structures have been formed by stirred media milling. This result is in agreement with the layer thickness dependence of the delamination energy for hexagonal boron nitride. The concentration of nanoparticles remaining dispersed after centrifugation of the ground suspension increases with grinding time and with decreasing grinding media size. After 5 h of grinding using 0.1 mm ZrO{sub 2} grinding media the yield of nanoparticle formation is about 5 wt%. The nanoparticles exhibit the typical Raman peak for hexagonal boron nitride at 1,366 cm{sup -1} showing that the in-plane order in the milled platelets is remained.

  16. Delamination of hexagonal boron nitride in a stirred media mill

    International Nuclear Information System (INIS)

    Damm, C.; Körner, J.; Peukert, W.

    2013-01-01

    A scalable process for delamination of hexagonal boron nitride in an aqueous solution of the non-ionic surfactant TWEEN85 using a stirred media mill is presented. The size of the ZrO 2 beads used as grinding media governs the dimensions of the ground boron nitride particles as atomic force microscopic investigations (AFM) reveal: the mean flakes thickness decreases from 3.5 to 1.5 nm and the ratio between mean flake area and mean flake thickness increases from 2,200 to 5,800 nm if the grinding media size is reduced from 0.8 to 0.1 mm. This result shows that a high number of stress events in combination with low stress energy (small grinding media) facilitate delamination of the layered material whereas at high stress energies in combination with a low number of stress events (large grinding media) breakage of the layers dominates over delamination. The results of particle height analyses by AFM show that few-layer structures have been formed by stirred media milling. This result is in agreement with the layer thickness dependence of the delamination energy for hexagonal boron nitride. The concentration of nanoparticles remaining dispersed after centrifugation of the ground suspension increases with grinding time and with decreasing grinding media size. After 5 h of grinding using 0.1 mm ZrO 2 grinding media the yield of nanoparticle formation is about 5 wt%. The nanoparticles exhibit the typical Raman peak for hexagonal boron nitride at 1,366 cm −1 showing that the in-plane order in the milled platelets is remained.

  17. Synthesis of borophenes: Anisotropic, two-dimensional boron polymorphs.

    Science.gov (United States)

    Mannix, Andrew J; Zhou, Xiang-Feng; Kiraly, Brian; Wood, Joshua D; Alducin, Diego; Myers, Benjamin D; Liu, Xiaolong; Fisher, Brandon L; Santiago, Ulises; Guest, Jeffrey R; Yacaman, Miguel Jose; Ponce, Arturo; Oganov, Artem R; Hersam, Mark C; Guisinger, Nathan P

    2015-12-18

    At the atomic-cluster scale, pure boron is markedly similar to carbon, forming simple planar molecules and cage-like fullerenes. Theoretical studies predict that two-dimensional (2D) boron sheets will adopt an atomic configuration similar to that of boron atomic clusters. We synthesized atomically thin, crystalline 2D boron sheets (i.e., borophene) on silver surfaces under ultrahigh-vacuum conditions. Atomic-scale characterization, supported by theoretical calculations, revealed structures reminiscent of fused boron clusters with multiple scales of anisotropic, out-of-plane buckling. Unlike bulk boron allotropes, borophene shows metallic characteristics that are consistent with predictions of a highly anisotropic, 2D metal. Copyright © 2015, American Association for the Advancement of Science.

  18. Electronic structure of superlattices of graphene and hexagonal boron nitride

    KAUST Repository

    Kaloni, Thaneshwor P.

    2011-11-14

    We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

  19. Quantitative description of microstructure defects in hexagonal boron nitrides using X-ray diffraction analysis

    International Nuclear Information System (INIS)

    Schimpf, C.; Motylenko, M.; Rafaja, D.

    2013-01-01

    A routine for simultaneous quantification of turbostratic disorder, amount of puckering and the dislocation and stacking fault density in hexagonal materials was proposed and tested on boron nitride powder samples that were synthesised using different methods. The routine allows the individual microstructure defects to be recognised according to their effect on the anisotropy of the X-ray diffraction line broadening. For quantification of the microstructure defects, the total line broadening is regarded as a linear combination of the contributions from the particular defects. The total line broadening is obtained from the line profile fitting. As testing material, graphitic boron nitride (h-BN) was employed in the form of hot-isostatically pressed h-BN, pyrolytic h-BN or a h-BN, which was chemically vapour deposited at a low temperature. The kind of the dominant microstructure defects determined from the broadening of the X-ray diffraction lines was verified by high resolution transmission electron microscopy. Their amount was attempted to be verified by alternative methods. - Highlights: • Reliable method for quantification of microstructure defects in BN was suggested. • The method is based on the analysis of anisotropic XRD line broadening. • This XRD line broadening is unique and characteristic of the respective defect. • Thus, the quantification of coexistent microstructure defects is possible. • The method was tested on hexagonal BN, which was produced by different techniques

  20. Electrostatic doping of graphene through ultrathin hexagonal boron nitride films.

    Science.gov (United States)

    Bokdam, Menno; Khomyakov, Petr A; Brocks, Geert; Zhong, Zhicheng; Kelly, Paul J

    2011-11-09

    When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metal|h-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for Cu|h-BN|graphene stacks to study how the graphene doping depends on the thickness of the h-BN layer and on a potential difference applied between Cu and graphene. We develop an analytical model that describes the doping very well, allowing us to identify the key parameters that govern the device behavior. A predicted intrinsic doping of graphene is particularly prominent for ultrathin h-BN layers and should be observable in experiment. It is dominated by novel interface terms that we evaluate from DFT calculations for the individual materials and for interfaces between h-BN and Cu or graphene.

  1. Gate dependent Raman spectroscopy of graphene on hexagonal boron nitride.

    Science.gov (United States)

    Chattrakun, Kanokporn; Huang, Shengqiang; Watanabe, K; Taniguchi, T; Sandhu, A; LeRoy, B J

    2013-12-18

    Raman spectroscopy, a fast and nondestructive imaging method, can be used to monitor the doping level in graphene devices. We fabricated chemical vapor deposition (CVD) grown graphene on atomically flat hexagonal boron nitride (hBN) flakes and SiO2 substrates. We compared their Raman response as a function of charge carrier density using an ion gel as a top gate. The G peak position, the 2D peak position, the 2D peak width and the ratio of the 2D peak area to the G peak area show a dependence on carrier density that differs for hBN compared to SiO2. Histograms of two-dimensional mapping are used to compare the fluctuations in the Raman peak properties between the two substrates. The hBN substrate has been found to produce fewer fluctuations at the same charge density owing to its atomically flat surface and reduced charged impurities.

  2. Etched graphene quantum dots on hexagonal boron nitride

    Science.gov (United States)

    Engels, S.; Epping, A.; Volk, C.; Korte, S.; Voigtländer, B.; Watanabe, K.; Taniguchi, T.; Trellenkamp, S.; Stampfer, C.

    2013-08-01

    We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9 T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN.

  3. Modelling heat conduction in polycrystalline hexagonal boron-nitride films.

    Science.gov (United States)

    Mortazavi, Bohayra; Pereira, Luiz Felipe C; Jiang, Jin-Wu; Rabczuk, Timon

    2015-08-19

    We conducted extensive molecular dynamics simulations to investigate the thermal conductivity of polycrystalline hexagonal boron-nitride (h-BN) films. To this aim, we constructed large atomistic models of polycrystalline h-BN sheets with random and uniform grain configuration. By performing equilibrium molecular dynamics (EMD) simulations, we investigated the influence of the average grain size on the thermal conductivity of polycrystalline h-BN films at various temperatures. Using the EMD results, we constructed finite element models of polycrystalline h-BN sheets to probe the thermal conductivity of samples with larger grain sizes. Our multiscale investigations not only provide a general viewpoint regarding the heat conduction in h-BN films but also propose that polycrystalline h-BN sheets present high thermal conductivity comparable to monocrystalline sheets.

  4. Defect sensitive etching of hexagonal boron nitride single crystals

    Science.gov (United States)

    Edgar, J. H.; Liu, S.; Hoffman, T.; Zhang, Yichao; Twigg, M. E.; Bassim, Nabil D.; Liang, Shenglong; Khan, Neelam

    2017-12-01

    Defect sensitive etching (DSE) was developed to estimate the density of non-basal plane dislocations in hexagonal boron nitride (hBN) single crystals. The crystals employed in this study were precipitated by slowly cooling (2-4 °C/h) a nickel-chromium flux saturated with hBN from 1500 °C under 1 bar of flowing nitrogen. On the (0001) planes, hexagonal-shaped etch pits were formed by etching the crystals in a eutectic mixture of NaOH and KOH between 450 °C and 525 °C for 1-2 min. There were three types of pits: pointed bottom, flat bottom, and mixed shape pits. Cross-sectional transmission electron microscopy revealed that the pointed bottom etch pits examined were associated with threading dislocations. All of these dislocations had an a-type burgers vector (i.e., they were edge dislocations, since the line direction is perpendicular to the [ 2 11 ¯ 0 ]-type direction). The pit widths were much wider than the pit depths as measured by atomic force microscopy, indicating the lateral etch rate was much faster than the vertical etch rate. From an Arrhenius plot of the log of the etch rate versus the inverse temperature, the activation energy was approximately 60 kJ/mol. This work demonstrates that DSE is an effective method for locating threading dislocations in hBN and estimating their densities.

  5. Transport properties of ultrathin black phosphorus on hexagonal boron nitride

    International Nuclear Information System (INIS)

    Doganov, Rostislav A.; Özyilmaz, Barbaros; Koenig, Steven P.; Yeo, Yuting; Watanabe, Kenji; Taniguchi, Takashi

    2015-01-01

    Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO 2 substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO 2 substrates and reduces the hysteresis at room temperature

  6. Transport properties of ultrathin black phosphorus on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Doganov, Rostislav A.; Özyilmaz, Barbaros [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, 28 Medical Drive, 117456 Singapore (Singapore); Koenig, Steven P.; Yeo, Yuting [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2015-02-23

    Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.

  7. Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy

    Science.gov (United States)

    Vuong, T. Q. P.; Cassabois, G.; Valvin, P.; Rousseau, E.; Summerfield, A.; Mellor, C. J.; Cho, Y.; Cheng, T. S.; Albar, J. D.; Eaves, L.; Foxon, C. T.; Beton, P. H.; Novikov, S. V.; Gil, B.

    2017-06-01

    We investigate the opto-electronic properties of hexagonal boron nitride grown by high temperature plasma-assisted molecular beam epitaxy. We combine atomic force microscopy, spectroscopic ellipsometry, and photoluminescence spectroscopy in the deep ultraviolet to compare the quality of hexagonal boron nitride grown either on sapphire or highly oriented pyrolytic graphite. For both substrates, the emission spectra peak at 235 nm, indicating the high optical quality of hexagonal boron nitride grown by molecular beam epitaxy. The epilayers on highly oriented pyrolytic graphite demonstrate superior performance in the deep ultraviolet (down to 210 nm) compared to those on sapphire. These results reveal the potential of molecular beam epitaxy for the growth of hexagonal boron nitride on graphene, and more generally, for fabricating van der Waals heterostructures and devices by means of a scalable technology.

  8. Electronic properties of Mn-decorated silicene on hexagonal boron nitride

    KAUST Repository

    Kaloni, Thaneshwor P.

    2013-12-17

    We study silicene on hexagonal boron nitride, using first-principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50 meV band gap in the silicene. We further address the effect of Mn decoration by determining the onsite Hubbard interaction parameter, which turns out to differ significantly for decoration at the top and hollow sites. The induced magnetism in the system is analyzed in detail.

  9. Graphene on hexagonal boron nitride as a tunable hyperbolic metamaterial

    Science.gov (United States)

    Dai, S.; Ma, Q.; Liu, M. K.; Andersen, T.; Fei, Z.; Goldflam, M. D.; Wagner, M.; Watanabe, K.; Taniguchi, T.; Thiemens, M.; Keilmann, F.; Janssen, G. C. A. M.; Zhu, S.-E.; Jarillo-Herrero, P.; Fogler, M. M.; Basov, D. N.

    2015-08-01

    Hexagonal boron nitride (h-BN) is a natural hyperbolic material, in which the dielectric constants are the same in the basal plane (ɛt ≡ ɛx = ɛy) but have opposite signs (ɛtɛz photons and electric dipoles in phonons. However, control of these hyperbolic phonon polaritons modes has remained challenging, mostly because their electrodynamic properties are dictated by the crystal lattice of h-BN. Here we show, by direct nano-infrared imaging, that these hyperbolic polaritons can be effectively modulated in a van der Waals heterostructure composed of monolayer graphene on h-BN. Tunability originates from the hybridization of surface plasmon polaritons in graphene with hyperbolic phonon polaritons in h-BN, so that the eigenmodes of the graphene/h-BN heterostructure are hyperbolic plasmon-phonon polaritons. The hyperbolic plasmon-phonon polaritons in graphene/h-BN suffer little from ohmic losses, making their propagation length 1.5-2.0 times greater than that of hyperbolic phonon polaritons in h-BN. The hyperbolic plasmon-phonon polaritons possess the combined virtues of surface plasmon polaritons in graphene and hyperbolic phonon polaritons in h-BN. Therefore, graphene/h-BN can be classified as an electromagnetic metamaterial as the resulting properties of these devices are not present in its constituent elements alone.

  10. Exfoliation of Hexagonal Boron Nitride via Ferric Chloride Intercalation

    Science.gov (United States)

    Hung, Ching-cheh; Hurst, Janet; Santiago, Diana; Rogers, Richard B.

    2014-01-01

    Sodium fluoride (NaF) was used as an activation agent to successfully intercalate ferric chloride (FeCl3) into hexagonal boron nitride (hBN). This reaction caused the hBN mass to increase by approx.100 percent, the lattice parameter c to decrease from 6.6585 to between 6.6565 and 6.6569 ?, the x-ray diffraction (XRD) (002) peak to widen from 0.01deg to 0.05deg of the full width half maximum value, the Fourier transform infrared (FTIR) spectrum's broad band (1277/cm peak) to change shape, and new FTIR bands to emerge at 3700 to 2700 and 1600/cm. This indicates hBN's structural and chemical properties are significantly changed. The intercalated product was hygroscopic and interacted with moisture in the air to cause further structural and chemical changes (from XRD and FTIR). During a 24-h hold at room temperature in air with 100 percent relative humidity, the mass increased another 141 percent. The intercalated product, hydrated or not, can be heated to 750 C in air to cause exfoliation. Exfoliation becomes significant after two intercalation-air heating cycles, when 20-nm nanosheets are commonly found. Structural and chemical changes indicated by XRD and FTIR data were nearly reversed after the product was placed in hydrochloric acid (HCl), resulting in purified, exfoliated, thin hBN products.

  11. Large-area monolayer hexagonal boron nitride on Pt foil.

    Science.gov (United States)

    Park, Ji-Hoon; Park, Jin Cheol; Yun, Seok Joon; Kim, Hyun; Luong, Dinh Hoa; Kim, Soo Min; Choi, Soo Ho; Yang, Woochul; Kong, Jing; Kim, Ki Kang; Lee, Young Hee

    2014-08-26

    Hexagonal boron nitride (h-BN) has recently been in the spotlight due to its numerous applications including its being an ideal substrate for two-dimensional electronics, a tunneling material for vertical tunneling devices, and a growth template for heterostructures. However, to obtain a large area of h-BN film while maintaining uniform thickness is still challenging and has not been realized. Here, we report the systematical study of h-BN growth on Pt foil by using low pressure chemical vapor deposition with a borazine source. The monolayer h-BN film was obtained over the whole Pt foil (2 × 5 cm(2)) under foil size. A borazine source was catalytically decomposed on the Pt surface, leading to the self-limiting growth of the monolayer without the associating precipitation, which is very similar to the growth of graphene on Cu. The orientation of the h-BN domains was largely confined by the Pt domain, which is confirmed by polarizing optical microscopy (POM) assisted by the nematic liquid crystal (LC) film. The total pressure and orientation of the Pt lattice plane are crucial parameters for thickness control. At high pressure (∼0.5 Torr), thick film was grown on Pt (111), and in contrast, thin film was grown on Pt (001). Our advances in monolayer h-BN growth will play an important role to further develop a high quality h-BN film that can be used for vertical tunneling, optoelectronic devices and growth templates for a variety of heterostructures.

  12. Hexagonal boron nitride neutron detectors with high detection efficiencies

    Science.gov (United States)

    Maity, A.; Grenadier, S. J.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2018-01-01

    Neutron detectors fabricated from 10B enriched hexagonal boron nitride (h-10BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors to date at about 53%. In this work, photoconductive-like vertical detectors with a detection area of 1 × 1 mm2 were fabricated from 50 μm thick free-standing h-BN epilayers using Ni/Au and Ti/Al bilayers as ohmic contacts. Leakage currents, mobility-lifetime (μτ) products under UV photoexcitation, and neutron detection efficiencies have been measured for a total of 16 different device configurations. The results have unambiguously identified that detectors incorporating the Ni/Au bilayer on both surfaces as ohmic contacts and using the negatively biased top surface for neutron irradiation are the most desired device configurations. It was noted that high growth temperatures of h-10BN epilayers on sapphire substrates tend to yield a higher concentration of oxygen impurities near the bottom surface, leading to a better device performance by the chosen top surface for irradiation than by the bottom. Preferential scattering of oxygen donors tends to reduce the mobility of holes more than that of electrons, making the biasing scheme with the ability of rapidly extracting holes at the irradiated surface while leaving the electrons to travel a large average distance inside the detector at a preferred choice. When measured against a calibrated 6LiF filled micro-structured semiconductor neutron detector, it was shown that the optimized configuration has pushed the detection efficiency of h-BN neutron detectors to 58%. These detailed studies also provided a better understanding of growth-mediated impurities in h-BN epilayers and their effects on the charge collection and neutron detection efficiencies.

  13. Thermal neutron detectors based on hexagonal boron nitride epilayers

    Science.gov (United States)

    Doan, T. C.; Marty, A.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2016-09-01

    Solid-state neutron detectors with high performances are urgently sought after for the detection of fissile materials. Until now, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We have successfully synthesized hexagonal boron nitride (h-BN) epilayers with varying thicknesses (0.3 μm - 50 μm) by metal organic chemical vapor deposition (MOCVD) on sapphire substrates. In this paper, we present the detailed characterization of thermal neutron detectors fabricated from h-BN epilayers with a thickness up to 5 m to obtain insights into the h-BN epilayer thickness dependence of the device performance. The results revealed that the charge collection efficiency is almost independent of the h-BN epilayer thickness. By minimizing h-BN material removal by dry etching, it was shown that detectors incorporating an isotopically 10B-enriched h-BN epilayer of 2.7 μm in thickness exhibited an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. By doing away altogether with dry etching, we have successfully realized a simple vertical 43 μm thick h-10BN detector which delivers a detection efficiency of 51.4% for thermal neutrons, which is the highest reported efficiency for any semiconductor-based neutron detector The h-BN detectors possess all the advantages of semiconductor devices including low cost, high efficiency and sensitivity, wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.

  14. On the buckling of hexagonal boron nitride nanoribbons via structural mechanics

    Science.gov (United States)

    Giannopoulos, Georgios I.

    2018-03-01

    Monolayer hexagonal boron nitride nanoribbons have similar crystal structure as graphene nanoribbons, have excellent mechanical, thermal insulating and dielectric properties and additionally present chemical stability. These allotropes of boron nitride can be used in novel applications, in which graphene is not compatible, to achieve remarkable performance. The purpose of the present work is to provide theoretical estimations regarding the buckling response of hexagonal boron nitride monolayer under compressive axial loadings. For this reason, a structural mechanics method is formulated which employs the exact equilibrium atomistic structure of the specific two-dimensional nanomaterial. In order to represent the interatomic interactions appearing between boron and nitrogen atoms, the Dreiding potential model is adopted which is realized by the use of three-dimensional, two-noded, spring-like finite elements of appropriate stiffness matrices. The critical compressive loads that cause the buckling of hexagonal boron nitride nanoribbons are computed with respect to their size and chirality while some indicative buckled shapes of them are illustrated. Important conclusions arise regarding the effect of the size and chirality on the structural stability of the hexagonal boron nitride monolayers. An analytical buckling formula, which provides good fitting of the numerical outcome, is proposed.

  15. Quasi free-standing silicene in a superlattice with hexagonal boron nitride

    KAUST Repository

    Kaloni, T. P.

    2013-11-12

    We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized in this superlattice. In particular, the Dirac cone of silicene is preserved. Due to the wide band gap of hexagonal boron nitride, the superlattice realizes the characteristic physical phenomena of free-standing silicene. In particular, we address by model calculations the combined effect of the intrinsic spin-orbit coupling and an external electric field, which induces a transition from a semimetal to a topological insulator and further to a band insulator.

  16. A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

    NARCIS (Netherlands)

    Zomer, P. J.; Dash, S. P.; Tombros, N.; van Wees, B. J.

    2011-01-01

    We present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm(2) V-1 s(-1) at room temperature and 275 000 cm(2) V-1 s(-1) at 4.2 K. The excellent quality is supported by the early

  17. Comparative study of the interfaces of graphene and hexagonal boron nitride with silver

    DEFF Research Database (Denmark)

    Garnica, Manuela; Schwarz, Martin; Ducke, Jacob

    2016-01-01

    Silver opens up interesting perspectives in the fabrication of complex systems based on heteroepitaxial layers after the growth of a silicene layer on its (111) face has been proposed. In this work we explore different synthesis methods of hexagonal boron nitride (h-BN) and graphene sheets...

  18. In situ observations during chemical vapor deposition of hexagonal boron nitride on polycrystalline copper

    DEFF Research Database (Denmark)

    Kidambi, Piran R.; Blume, Raoul; Kling, Jens

    2014-01-01

    Using a combination of complementary in situ X-ray photoelectron spectroscopy and X-ray diffraction, we study the fundamental mechanisms underlying the chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) on polycrystalline Cu. The nucleation and growth of h-BN layers is found to occ...

  19. Tilted hexagonal post arrays: DNA electrophoresis in anisotropic media

    Science.gov (United States)

    Chen, Zhen; Dorfman, Kevin D.

    2013-01-01

    Using Brownian dynamics simulations, we show that DNA electrophoresis in a hexagonal array of micron-sized posts changes qualitatively when the applied electric field vector is not coincident with the lattice vectors of the array. DNA electrophoresis in such “tilted” post arrays is superior to the standard “un-tilted” approach; while the time required to achieve a resolution of unity in a tilted post array is similar to an un-tilted array at a low electric field strengths, this time (i) decreases exponentially with electric field strength in a tilted array and (ii) increases exponentially with electric field strength in an un-tilted array. Although the DNA dynamics in a post array are complicated, the electrophoretic mobility results indicate that the “free path”, i.e., the average distance of ballistic trajectories of point sized particles launched from random positions in the unit cell until they intersect the next post, is a useful proxy for the detailed DNA trajectories. The analysis of the free path reveals a fundamental connection between anisotropy of the medium and DNA transport therein that goes beyond simply improving the separation device. PMID:23868490

  20. Isotope engineering of van der Waals interactions in hexagonal boron nitride

    Science.gov (United States)

    Vuong, T. Q. P.; Liu, S.; van der Lee, A.; Cuscó, R.; Artús, L.; Michel, T.; Valvin, P.; Edgar, J. H.; Cassabois, G.; Gil, B.

    2018-02-01

    Hexagonal boron nitride is a model lamellar compound where weak, non-local van der Waals interactions ensure the vertical stacking of two-dimensional honeycomb lattices made of strongly bound boron and nitrogen atoms. We study the isotope engineering of lamellar compounds by synthesizing hexagonal boron nitride crystals with nearly pure boron isotopes (10B and 11B) compared to those with the natural distribution of boron (20 at% 10B and 80 at% 11B). On the one hand, as with standard semiconductors, both the phonon energy and electronic bandgap varied with the boron isotope mass, the latter due to the quantum effect of zero-point renormalization. On the other hand, temperature-dependent experiments focusing on the shear and breathing motions of adjacent layers revealed the specificity of isotope engineering in a layered material, with a modification of the van der Waals interactions upon isotope purification. The electron density distribution is more diffuse between adjacent layers in 10BN than in 11BN crystals. Our results open perspectives in understanding and controlling van der Waals bonding in layered materials.

  1. Optical properties of boron-group (V) hexagonal nanowires: DFT ...

    Indian Academy of Sciences (India)

    2017-06-20

    Jun 20, 2017 ... Home; Journals; Pramana – Journal of Physics; Volume 89; Issue 1. Optical properties of boron-group (V) ... MAHESH SONI1 ANURAG SRIVASTAVA1. Advanced Materials Research Group, CNT Laboratory, ABV-Indian Institute of Information Technology and Management, Gwalior 474 010, India ...

  2. Large-area few-layer hexagonal boron nitride prepared by quadrupole field aided exfoliation

    Science.gov (United States)

    Lun Lu, Han; Zhi Rong, Min; Qiu Zhang, Ming

    2018-03-01

    A quadrupole electric field-mediated exfoliation method is proposed to convert micron-sized hexagonal boron nitride (h-BN) powder into few-layer hexagonal boron nitride nanosheets (h-BNNS). Under optimum conditions (400 Hz, 40 V, 32 μg ml‑1, sodium deoxycholate, TAE medium), the h-BN powders (thickness >200 nm, horizontal scale ∼10 μm) are successfully exfoliated into 0.5–4 nm (1–10 layers) thick h-BNNS with the same horizontal scale. Dynamic laser scattering and atomic force microscope data show that the yield is 47.6% (for the portion with the thickness of 0.5–6 nm), and all of the vertical sizes are reduced to smaller than 18 nm (45 layers).

  3. Strain-engineered graphene grown on hexagonal boron nitride by molecular beam epitaxy

    OpenAIRE

    Summerfield, Alex; Davies, Andrew; Cheng, Tin S.; Korolkov, Vladimir V.; Cho, YongJin; Mellor, Christopher J.; Foxon, C. Thomas; Khlobystov, Andrei N.; Watanabe, Kenji; Taniguchi, Takashi; Eaves, Laurence; Novikov, Sergei V.; Beton, Peter H.

    2016-01-01

    Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20??m, and exhibits moir? patterns with large periodicities, up to ~30?nm, indicating that the layers are highly strained. Topological defects in the moir? patterns are observed and attributed to the relaxation of graphene islands which nucleate at different sites and subsequently coalesce. In addition, cracks are formed leading to strain relaxation, hig...

  4. Interlayer coupling enhancement in graphene/hexagonal boron nitride heterostructures by intercalated defects and vacancies

    OpenAIRE

    Park, Sohee; Park, Changwon; Kim, Gunn

    2014-01-01

    Among two-dimensional atomic crystals, hexagonal boron nitride (hBN) is one of the most remarkable materials to fabricate heterostructures revealing unusual properties. We perform first-principles calculations to determine whether intercalated metal atoms and vacancies can mediate interfacial coupling and influence the structural and electronic properties of the graphene/hBN heterostructure. Metal impurity atoms (Li, K, Cr, Mn, Co, and Cu) as extrinsic defects between the graphene and hBN she...

  5. Synthesis of Few-Layer, Large Area Hexagonal-Boron Nitride by Pulsed Laser Deposition (POSTPRINT)

    Science.gov (United States)

    2014-09-01

    electrons, and minimal sites for adsorbed surface impurities [7]. The use of exfoliated h BN as a substrate dielectric material in graphene devices has...by annealing at 1000 °C [16]. This also includes recent reports on the direct CVD growth of h BN on the surface of epitaxial graphene with an ammonia...AFRL-RX-WP-JA-2015-0050 SYNTHESIS OF FEW-LAYER, LARGE AREA HEXAGONAL-BORON NITRIDE BY PULSED LASER DEPOSITION (POSTPRINT) Nicholas R Glavin

  6. The effect of the boron source composition ratio on the adsorption performance of hexagonal boron nitride without a template

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning, E-mail: zhangning5832@163.com; Zhang, Tong; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Cui, Xingyu

    2015-08-01

    An inexpensive boric acid (H{sub 3}BO{sub 3}) and borax (Na{sub 2}B{sub 4}O{sub 7}·10H{sub 2}O) mix was used as a source of boron with different composition ratios, and urea was used as a nitrogen source, in flowing ammonia atmosphere, for the preparation of hexagonal boron nitride (h-BN) with different micro-morphologies. Under a certain synthesis process, the effects of the molar ratio of borax and boric acid (or simply the boron source composition ratio for short) on the phase composition of the sample were studied; the work also explored the effect of boron source composition ratio on the micro-morphology, adsorption desorption isotherm and specific surface area of the h-BN powder. The main purpose of this work was to determine the optimum composition ratio of preparing spherical mesoporous h-BN and ensure that the micro-mechanism underpinning the formation of spherical mesoporous h-BN was understood. The results showed that at the optimum boron source composition ratio of 1:1, globular mesoporous spheres with a diameter of approximately 600–800 nm could be obtained with the highest pore volume and specific surface area (230.2 m{sup 2}/g). - Graphical abstract: Display Omitted - Highlights: • Spherical h-BN was synthesized by controlling the boron source composition ratio. • Without extra spherical template, solid Na{sub 2}O was equal to a spherical template. • At boron source composition ratio of 1:1, h-BN had best adsorption performance.

  7. Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

    Science.gov (United States)

    Heilmann, M.; Bashouti, M.; Riechert, H.; Lopes, J. M. J.

    2018-04-01

    Van der Waals heterostructures comprising of hexagonal boron nitride and graphene are promising building blocks for novel two-dimensional devices such as atomically thin transistors or capacitors. However, demonstrators of those devices have been so far mostly fabricated by mechanical assembly, a non-scalable and time-consuming method, where transfer processes can contaminate the surfaces. Here, we investigate a direct growth process for the fabrication of insulating hexagonal boron nitride on high quality epitaxial graphene using plasma assisted molecular beam epitaxy. Samples were grown at varying temperatures and times and studied using atomic force microscopy, revealing a growth process limited by desorption at high temperatures. Nucleation was mostly commencing from morphological defects in epitaxial graphene, such as step edges or wrinkles. Raman spectroscopy combined with x-ray photoelectron measurements confirm the formation of hexagonal boron nitride and prove the resilience of graphene against the nitrogen plasma used during the growth process. The electrical properties and defects in the heterostructures were studied with high lateral resolution by tunneling current and Kelvin probe force measurements. This correlated approach revealed a nucleation apart from morphological defects in epitaxial graphene, which is mediated by point defects. The presented results help understanding the nucleation and growth behavior during van der Waals epitaxy of 2D materials, and point out a route for a scalable production of van der Waals heterostructures.

  8. The Propagation of Thermoelastic Waves in Anisotropic Media of Orthorhombic, Hexagonal, and Tetragonal Syngonies

    Directory of Open Access Journals (Sweden)

    Nurlybek A. Ispulov

    2017-01-01

    Full Text Available The investigation of wave propagation in elastic medium with thermomechanical effects is bound to have important economic implications in the field of composite materials, seismology, geophysics, and so on. In this article, thermoelastic wave propagation in anisotropic mediums of orthorhombic and hexagonal syngony having heterogeneity along z-axis is studied. Such medium has second-order axis symmetry. By using analytical matriciant method, a set of equations of motions in thermoelastic medium are reduced to an equivalent set of the first-order differential equations. In the general case, for the given set of equations, structures of fundamental solutions are made and dispersion relations are obtained.

  9. Shear-induced phase transition of nanocrystalline hexagonal boron nitride to wurtzitic structure at room temperature and lower pressure

    OpenAIRE

    Ji, Cheng; Levitas, Valery I.; Zhu, Hongyang; Chaudhuri, Jharna; Marathe, Archis; Ma, Yanzhang

    2012-01-01

    Disordered structures of boron nitride (BN), graphite, boron carbide (BC), and boron carbon nitride (BCN) systems are considered important precursor materials for synthesis of superhard phases in these systems. However, phase transformation of such materials can be achieved only at extreme pressure–temperature conditions, which is irrelevant to industrial applications. Here, the phase transition from disordered nanocrystalline hexagonal (h)BN to superhard wurtzitic (w)BN was found at room tem...

  10. The influence of metal Mg on micro-morphology and crystallinity of spherical hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

    2015-08-15

    Highlights: • The action mechanism of Mg to the synthesis of spherical BN was explored. • The influence of Mg content on the crystallinity of h-BN powders was studied. • Even if not added any template, the spherical h-BN could be prepared. - Abstract: This search used the boric acid and borax as a source of boron, urea as a nitrogen source, Mg as metal catalyst, and thus prepared different micro-morphology and crystallinity hexagonal boron nitride powders under a flowing ammonia atmosphere at a nitriding temperature of 750 °C. The effect of Mg content on the crystallinity and micro-morphology of hexagonal boron nitride powders was studied, and the Mg action mechanism was explored. Without the added surfactant, the graphitization index (GI) was 6.87, and the diameter of the spherical h-BN was bigger. When the added Mg were 0.1 g, 0.3 g, 0.5 g and 0.7 g, the (GI) decreased to 6.04, 5.67, 4.62 and 4.84, respectively. When the Mg content was higher (0.9 g), GI value increased rapidly, and the crystallinity became bad. When the Mg content was 0.5 g, the dispersion of h-BN powders was at its optimum and refinement apparently, and the crystallinity at its highest.

  11. Marine corrosion protective coatings of hexagonal boron nitride thin films on stainless steel.

    Science.gov (United States)

    Husain, Esam; Narayanan, Tharangattu N; Taha-Tijerina, Jose Jaime; Vinod, Soumya; Vajtai, Robert; Ajayan, Pulickel M

    2013-05-22

    Recently, two-dimensional, layered materials such as graphene and hexagonal boron nitride (h-BN) have been identified as interesting materials for a range of applications. Here, we demonstrate the corrosion prevention applications of h-BN in marine coatings. The performance of h-BN/polymer hybrid coatings, applied on stainless steel, were evaluated using electrochemical techniques in simulated seawater media [marine media]. h-BN/polymer coating shows an efficient corrosion protection with a low corrosion current density of 5.14 × 10(-8) A/cm(2) and corrosion rate of 1.19 × 10(-3) mm/year and it is attributed to the hydrofobic, inert and dielectric nature of boron nitride. The results indicated that the stainless steel with coatings exhibited improved corrosion resistance. Electrochemical impedance spectroscopy and potentiodynamic analysis were used to propose a mechanism for the increased corrosion resistance of h-BN coatings.

  12. Chemical reaction of hexagonal boron nitride and graphite nanoclusters in mechanical milling systems

    Energy Technology Data Exchange (ETDEWEB)

    Muramatsu, Y.; Grush, M.; Callcott, T.A. [Univ. of Tennessee, Knoxville, TN (United States)] [and others

    1997-04-01

    Synthesis of boron-carbon-nitride (BCN) hybrid alloys has been attempted extensively by many researchers because the BCN alloys are considered an extremely hard material called {open_quotes}super diamond,{close_quotes} and the industrial application for wear-resistant materials is promising. A mechanical alloying (MA) method of hexagonal boron nitride (h-BN) with graphite has recently been studied to explore the industrial synthesis of the BCN alloys. To develop the MA method for the BCN alloy synthesis, it is necessary to confirm the chemical reaction processes in the mechanical milling systems and to identify the reaction products. Therefore, the authors have attempted to confirm the chemical reaction process of the h-BN and graphite in mechanical milling systems using x-ray absorption near edge structure (XANES) methods.

  13. Chemical reaction of hexagonal boron nitride and graphite nanoclusters in mechanical milling systems

    International Nuclear Information System (INIS)

    Muramatsu, Y.; Grush, M.; Callcott, T.A.

    1997-01-01

    Synthesis of boron-carbon-nitride (BCN) hybrid alloys has been attempted extensively by many researchers because the BCN alloys are considered an extremely hard material called open-quotes super diamond,close quotes and the industrial application for wear-resistant materials is promising. A mechanical alloying (MA) method of hexagonal boron nitride (h-BN) with graphite has recently been studied to explore the industrial synthesis of the BCN alloys. To develop the MA method for the BCN alloy synthesis, it is necessary to confirm the chemical reaction processes in the mechanical milling systems and to identify the reaction products. Therefore, the authors have attempted to confirm the chemical reaction process of the h-BN and graphite in mechanical milling systems using x-ray absorption near edge structure (XANES) methods

  14. Reactivity of graphene and hexagonal boron nitride in-plane heterostructures with oxygen: a DFT study.

    Science.gov (United States)

    Nguyen, Manh-Thuong

    2014-08-04

    A density-functional study has been undertaken to investigate the chemical properties of in-plane heterostructures of graphene and hexagonal boron nitride. The interactions of armchair and zigzag linking edges with oxygen are looked at in detail. The results of the calculations indicate that the linking edges are highly reactive to oxygen atoms and predict that oxygen molecules can accordingly be adsorbed dissociatively. Furthermore, because oxygen atoms cooperatively interact with the heterostructures, the process can lead to opening of the linking edges, thus splitting the two materials. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Nanolayering around and thermal resistivity of the water-hexagonal boron nitride interface

    Science.gov (United States)

    Akıner, Tolga; Mason, Jeremy K.; Ertürk, Hakan

    2017-07-01

    The water-hexagonal boron nitride interface was investigated by molecular dynamics simulations. Since the properties of the interface change significantly with the interatomic potential, a new method for calibrating the solid-liquid interatomic potential is proposed based on the experimental energy of the interface. The result is markedly different from that given by Lorentz-Berthelot mixing for the Lennard-Jones parameters commonly used in the literature. Specifically, the extent of nanolayering and interfacial thermal resistivity is measured for several interatomic potentials, and the one calibrated by the proposed method gives the least thermal resistivity.

  16. Origin of Improved Optical Quality of Monolayer Molybdenum Disulfide Grown on Hexagonal Boron Nitride Substrate.

    Science.gov (United States)

    Wan, Yi; Zhang, Hui; Wang, Wei; Sheng, Bowen; Zhang, Kun; Wang, Yilun; Song, Qingjun; Mao, Nannan; Li, Yanping; Wang, Xinqiang; Zhang, Jin; Dai, Lun

    2016-01-13

    Monolayer MoS2 is synthesized on hexagonal boron nitride (h-BN) flakes with a simple, high-yield method. Monolayer MoS2 on h-BN exhibits improved optical quality. Combining the theoretical and experimental analysis, it is concluded that the enhanced photoluminescence and Raman intensities of monolayer MoS2 probably originate from the relatively weak doping effect from the h-BN substrate rather than the optical interference effect. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Electronic structure of graphene/hexagonal boron nitride heterostructure revealed by Nano-ARPES

    Science.gov (United States)

    Chen, Chaoyu; Avila, José; Wang, Shuopei; Yang, Rong; Zhang, Guangyu; Asensio, Maria C.

    2017-06-01

    The ability to explore electronic structure and their role in determining material’s macroscopic behaviour is essential to explain and engineer functions of material and device. Graphene/hexagonal boron nitride heterostructure (G/h-BN) has become a model system to study the emergent behaviour in 2D van der Waals heterostructure. Here by employing angle-resolved photoemission spectroscopy with spatial resolution ∼ 100 nm (Nano-ARPES), we give a full description on the electronic structure of G/h-BN, demonstrating the power of Nano-ARPES to detect the microscopic inhomogeneity of electronic structure for different materials.

  18. Influence of point defects on the near edge structure of hexagonal boron nitride

    Science.gov (United States)

    McDougall, Nicholas L.; Partridge, Jim G.; Nicholls, Rebecca J.; Russo, Salvy P.; McCulloch, Dougal G.

    2017-10-01

    Hexagonal boron nitride (hBN) is a wide-band-gap semiconductor with applications including gate insulation layers in graphene transistors, far-ultraviolet light emitting devices and as hydrogen storage media. Due to its complex microstructure, defects in hBN are challenging to identify. Here, we combine x-ray absorption near edge structure (XANES) spectroscopy with ab initio theoretical modeling to identify energetically favorable defects. Following annealing of hBN samples in vacuum and oxygen, the B and N K edges exhibited angular-dependent peak modifications consistent with in-plane defects. Theoretical calculations showed that the energetically favorable defects all produce signature features in XANES. Comparing these calculations with experiments, the principle defects were attributed to substitutional oxygen at the nitrogen site, substitutional carbon at the boron site, and hydrogen passivated boron vacancies. Hydrogen passivation of defects was found to significantly affect the formation energies, electronic states, and XANES. In the B K edge, multiple peaks above the major 1 s to π* peak occur as a result of these defects and the hydrogen passivated boron vacancy produces the frequently observed doublet in the 1 s to σ* transition. While the N K edge is less sensitive to defects, features attributable to substitutional C at the B site were observed. This defect was also calculated to have mid-gap states in its band structure that may be responsible for the 4.1-eV ultraviolet emission frequently observed from this material.

  19. Synthesis and characterization of hexagonal boron nitride for integration with graphene electronics

    Science.gov (United States)

    Bresnehan, Michael S.

    Hexagonal boron nitride (h-BN) has attracted increased interest as a dielectric material to graphene electronics. Traditional dielectrics, such as SiO2 or various high-k materials, can introduce scattering from charged surface states, impurities, surface optical phonons, and substrate roughness; significantly degrading the transport properties of graphene. Hexagonal boron nitride boasts several key advantages over SiO2 and high-k dielectrics. Most notably, it exhibits an atomically smooth surface that is expected to be free of dangling bonds, leading to an interface that is relatively free of surface charge traps and adsorbed impurities. Additionally, h- BN's high energy surface optical phonon modes lead to reduced phonon scattering from the dielectric. Using h-BN (grown via CVD on copper foil) as a gate dielectric to quasi-freestanding epitaxial graphene (QFEG) devices, a >2.5x increase in intrinsic current gain cut-off frequency and a >3x increase in mobility over HfO2 gated devices is obtained. In addition, this thesis presents the transfer-free deposition of boron nitride on sapphire and silicon for use as a supporting substrate to CVD-grown graphene. This is accomplished via a polymer-to-ceramic conversion process involving the deposition of polyborazylene at low temperature (≤400°C) and subsequent annealing at 1000°C to BN. Atomic force microscopy (AFM) confirms the deposition of an ultra smooth (RMS roughness CVD graphene transferred to boron nitride films deposited on Al2O3 at a polyborazylene deposition temperature of 400°C is nearly strain-free and results in an improvement in mobility of >1.5x and >2.5x compared to CVD graphene transferred to bare Al2O3 and SiO2, respectively, due to a low impurity density and reduced surface optical phonon scattering.

  20. Thermal transport characterization of hexagonal boron nitride nanoribbons using molecular dynamics simulation

    Directory of Open Access Journals (Sweden)

    Asir Intisar Khan

    2017-10-01

    Full Text Available Due to similar atomic bonding and electronic structure to graphene, hexagonal boron nitride (h-BN has broad application prospects such as the design of next generation energy efficient nano-electronic devices. Practical design and efficient performance of these devices based on h-BN nanostructures would require proper thermal characterization of h-BN nanostructures. Hence, in this study we have performed equilibrium molecular dynamics (EMD simulation using an optimized Tersoff-type interatomic potential to model the thermal transport of nanometer sized zigzag hexagonal boron nitride nanoribbons (h-BNNRs. We have investigated the thermal conductivity of h-BNNRs as a function of temperature, length and width. Thermal conductivity of h-BNNRs shows strong temperature dependence. With increasing width, thermal conductivity increases while an opposite pattern is observed with the increase in length. Our study on h-BNNRs shows considerably lower thermal conductivity compared to GNRs. To elucidate these aspects, we have calculated phonon density of states for both h-BNNRs and GNRs. Moreover, using EMD we have explored the impact of different vacancies, namely, point vacancy, edge vacancy and bi-vacancy on the thermal conductivity of h-BNNRs. With varying percentages of vacancies, significant reduction in thermal conductivity is observed and it is found that, edge and point vacancies are comparatively more destructive than bi-vacancies. Such study would contribute further into the growing interest for accurate thermal transport characterization of low dimensional nanostructures.

  1. Single Layer Nanomaterials: The Chemical Vapor Deposition Synthesis and Atomic Scale Characterization of Hexagonal Boron Nitride and Graphene

    OpenAIRE

    Gibb, Ashley L

    2015-01-01

    The design of novel nanomaterials with tunable geometries and properties has transformed chemistry and physics in recent years. In particular, recent advances in the isolation of two-dimensional films have inspired the exploration and development of stable, self-supporting single layer systems. Most notably graphene, a single layer of hexagonal sp2 carbon, has attracted interest due to intriguing electronic, optical, and mechanical properties. Hexagonal boron nitride (h-BN) is a closely relat...

  2. The preparation of high-adsorption, spherical, hexagonal boron nitride by template method

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

    2014-11-15

    Highlights: • The high-adsorption, spherical, hexagonal boron nitride powders were prepared. • The influence mechanism of template content on the micro-morphology and adsorption was explored. • At appropriate synthesis temperature, higher adsorption mesoporous spheres h-BN began to form. - Abstract: This research used low-cost boric acid and borax as a source of boron, urea as a nitrogen source, dodecyl-trimethyl ammonium chloride (DTAC) as a template, and thus prepared different micro-morphology hexagonal boron nitride powders under a flowing ammonia atmosphere at different nitriding temperatures. The effects of the template content and nitriding temperature on the micro-morphology of hexagonal boron nitride were studied and the formation mechanism analysed. The influences of the template content and nitriding temperature on adsorption performance were also explored. The results showed that at a nitriding temperature of 675 °C, the micro-morphologies of h-BN powder were orderly, inhomogeneous spherical, uniform spherical, beam, and pie-like with increasing template content. The micro-morphology was inhomogeneous spherical at a DTAC dose of 7.5%. The micro-morphology was uniform spherical at a DTAC dose of 10%. At a DTAC dose of 12%, the micro-morphology was a mixture of beam and pie-like shapes. At a certain template content (DTAC at 10%) and at lower nitriding temperatures (625 °C and 650 °C), spherical shell structures with surface subsidence began to form. The porous spheres would appear at a nitriding temperature of 675 °C, and the ball diameter thus formed was approximately 500–600 nm. The ball diameter was about 600–700 nm when the nitriding temperature was 700 °C. At a nitriding temperature of 725 °C, the ball diameter was between 800 and 1000 nm and sintering necking started to form. When the relative pressure was higher, previously closed pores opened and connected with the outside world: the adsorption then increased significantly. The

  3. Dipolar polarization and piezoelectricity of a hexagonal boron nitride sheet decorated with hydrogen and fluorine.

    Science.gov (United States)

    Noor-A-Alam, Mohammad; Kim, Hye Jung; Shin, Young-Han

    2014-04-14

    In contrast to graphene, a hexagonal boron nitride (h-BN) monolayer is piezoelectric because it is non-centrosymmetric. However, h-BN shows neither in-plane nor out-of-plane dipole moments due to its three-fold symmetry on the plane and the fact that it is completely flat. Here, we show that the controlled adsorption of hydrogen and/or fluorine atoms on both sides of a pristine h-BN sheet induces flatness distortion in a chair form and an out-of plane dipole moment. In contrast, a boat form has no out-of-plane dipole moment due to the alternating boron and nitrogen positions normal to the plane. Consequently, the chair form of surface-modified h-BN shows both in-plane and out-of-plane piezoelectric responses; while pristine h-BN and the boat form of decorated h-BN have only in-plane piezoelectric responses. These in-plane and out-of-plane piezoelectric responses of the modified h-BN are comparable to those in known three-dimensional piezoelectric materials. Such an engineered piezoelectric two-dimensional boron nitride monolayer can be a candidate material for various nano-electromechanical applications.

  4. Evolution of magnetism by rolling up hexagonal boron nitride nanosheets tailored with superparamagnetic nanoparticles.

    Science.gov (United States)

    Hwang, Da Young; Choi, Kyoung Hwan; Park, Jeong Eon; Suh, Dong Hack

    2017-02-01

    Controlling tunable properties by rolling up two dimensional nanomaterials is an exciting avenue for tailoring the electronic and magnetic properties of materials at the nanoscale. We demonstrate the tailoring of a magnetic nanocomposite through hybridization with magnetic nanomaterials using hexagonal boron nitride (h-BN) templates as an effective way to evolve magnetism for the first time. Boron nitride nanosheets exhibited their typical diamagnetism, but rolled-up boron nitride sheets (called nanoscrolls) clearly have para-magnetism in the case of magnetic susceptibility. Additionally, the Fe 3 O 4 NP sample shows a maximum ZFC curve at about 103 K, which indicates well dispersed superparamagnetic nanoparticles. The ZFC curve for the h-BN-Fe 3 O 4 NP scrolls exhibited an apparent rounded maximum blocking temperature at 192 K compared to the Fe 3 O 4 NPs, leading to a dramatic increase in T B . These magnetic nanoscroll derivatives are remarkable materials and should be suitable for high-performance composites and nano-, medical- and electromechanical-devices.

  5. Role of defects in the process of graphene growth on hexagonal boron nitride from atomic carbon

    International Nuclear Information System (INIS)

    Dabrowski, J.; Lippert, G.; Schroeder, T.; Lupina, G.

    2014-01-01

    Hexagonal boron nitride (h-BN) is an attractive substrate for graphene, as the interaction between these materials is weak enough for high carrier mobility to be retained in graphene but strong enough to allow for some epitaxial relationship. We deposited graphene on exfoliated h-BN by molecular beam epitaxy (MBE), we analyzed the atomistic details of the process by ab initio density functional theory (DFT), and we linked the DFT and MBE results by random walk theory. Graphene appears to nucleate around defects in virgin h-BN. The DFT analysis reveals that sticking of carbon to perfect h-BN is strongly reduced by desorption, so that pre-existing seeds are needed for the nucleation. The dominant nucleation seeds are C N C B and O N C N pairs and B 2 O 3 inclusions in the virgin substrate

  6. Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures

    International Nuclear Information System (INIS)

    Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P.

    2014-01-01

    Hexagonal boron nitride (h-BN) is a large bandgap insulating isomorph of graphene, ideal for atomically thin tunnel barrier applications. In this letter, we demonstrate large area chemical vapor deposited (CVD) h-BN as a promising spin tunnel barrier in graphene spin transport devices. In such structures, the ferromagnetic tunnel contacts with h-BN barrier are found to show robust tunneling characteristics over a large scale with resistances in the favorable range for efficient spin injection into graphene. The non-local spin transport and precession experiments reveal spin lifetime ≈500 ps and spin diffusion length ≈1.6 μm in graphene with tunnel spin polarization ≈11% at 100 K. The electrical and spin transport measurements at different injection bias current and gate voltages confirm tunnel spin injection through h-BN barrier. These results open up possibilities for implementation of large area CVD h-BN in spintronic technologies

  7. Preparation and thermal properties of polyacrylonitrile/hexagonal boron nitride composites

    International Nuclear Information System (INIS)

    Madakbaş, Seyfullah; Çakmakçı, Emrah; Kahraman, Memet Vezir

    2013-01-01

    Highlights: ► PAN/h-BN composites with improved thermal stability were prepared. ► Thermal properties of composites were analysed by TGA and DSC. ► Flame retardancy of the composites increased up to 27%. - Abstract: Polyacrylonitrile is a thermoplastic polymer with unique properties and it has several uses. However its flammability is a major drawback for certain applications. In this study it was aimed to prepare polyacrylonitrile (PAN)/hexagonal boron nitride (h-BN) composites with improved flame retardancy and thermal stability. Chemical structures of the composites were characterized by FTIR analysis. Thermal properties of these novel composites were analysed by TGA and DSC measurements. Glass transition temperatures and char yields increased with increasing h-BN percentage. Flame retardancy of the PAN composite materials improved with the addition of h-BN and the LOI value reached to 27% from 18%. Furthermore, the surface morphology of the composites was investigated by SEM analysis.

  8. Synthesis and Thermal Conductivity of Exfoliated Hexagonal Boron Nitride/Alumina Ceramic Composite

    Science.gov (United States)

    Hung, Ching-cheh; Hurst, Janet; Santiago, Diana; Lizcano, Maricela; Kelly, Marisabel

    2017-01-01

    Exfoliated hexagonal boron nitride (hBN)/alumina composite can be fabricated by following the process of (1) heating a mixture of hBN, AlCl3, and NaF in nitrogen for intercalation; (2) heating the intercalated product in air for exfoliation and at the same time converting the intercalate (AlCl3) into Al2O3, (3) rinsing the oxidized product, (4) coating individual exfoliated hBN platelets that contain Al2O3 with new layers of aluminum oxide, and finally, (5) hot pressing the product into the composite. The composite thus obtained has a composition of approximately 60 percent by weight hBN and 40 percent by weight alumina. Its in-plane and through-plane thermal conductivity were measured to be 86 and 18 watts per meter Kelvin, respectively, at room temperature.

  9. Oxygen-assisted synthesis of hexagonal boron nitride films for graphene transistors

    Science.gov (United States)

    Zhuang, Pingping; Lin, Weiyi; Xu, Binbin; Cai, Weiwei

    2017-11-01

    We grow high-quality two-dimensional hexagonal boron nitride (h-BN) films on copper pockets by chemical vapor deposition. A piece of sapphire embedded in the pocket serves as an oxygen supply during the growth process. To obtain clean h-BN films, source powders are placed in a U-shaped quartz tube and heated up in a water bath without the carrier-gas flow. These films are characterized by using SEM, Raman, XPS, and selected area electron diffraction analyses. As dielectric substrates, h-BN films significantly enhance the charge-carrier mobility of graphene transistors. This facile and robust method can be a scalable approach to synthesize large-area high-quality h-BN films for related electronic applications.

  10. Nano-imaging and nano-spectroscopy of tunable surface phonon polaritons in hexagonal boron nitride

    Science.gov (United States)

    Dai, Siyuan; Fei, Zhe; Ma, Qiong; Rodin, Aleksandr; Wagner, Martin; McLeod, Alexander; Liu, Mengkun; Gannett, Will; Regan, William; Thiemens, Mark; Dominguez, Gerardo; Castro Neto, Antonio; Zettl, Alex; Keilmann, Fritz; Jarillo-Herrero, Pablo; Fogler, Michael; Basov, Dimitri

    2014-03-01

    Van der Waals crystals such as graphene, topological insulators, cuprate high-temperature superconductors, and many other layered structures reveal a rich variety of enigmatic electronic, photonic and magnetic properties. We report infrared (IR) nano-imaging of surface phonon polaritons in a prototypical van-der-Waals crystal: hexagonal boron nitride (hBN). In the setting of an antenna-based IR spectroscopic nanoscope, we accomplished launching, detecting, and real space imaging of the polaritonic waves. We were able to alter both the wavelength and the amplitude of such waves by varying the number of crystal layers in our specimens. We demonstrated a new nano-photonics method for mapping the polariton dispersion. The dispersion is shown to be governed by the crystal thickness according to a scaling law that persists down to a few monolayers. Our results point to novel functionalities of van-der-Waals crystals as reconfigurable nano-photonic materials.

  11. Role of hexagonal boron nitride in protecting ferromagnetic nanostructures from oxidation

    Science.gov (United States)

    Zihlmann, Simon; Makk, Péter; Vaz, Carlos A. F.; Schönenberger, Christian

    2016-03-01

    Ferromagnetic contacts are widely used to inject spin polarized currents into non-magnetic materials such as semiconductors or 2-dimensional materials like graphene. In these systems, oxidation of the ferromagnetic materials poses an intrinsic limitation on device performance. Here we investigate the role of ex situ transferred chemical vapour deposited hexagonal boron nitride (hBN) as an oxidation barrier for nanostructured cobalt and permalloy electrodes. The chemical state of the ferromagnets was investigated using x-ray photoemission electron microscopy because of its high sensitivity and lateral resolution. We have compared the oxide thickness formed on ferromagnetic nanostructures covered by hBN to uncovered reference structures. Our results show that hBN reduces the oxidation rate of ferromagnetic nanostructures suggesting that it could be used as an ultra-thin protection layer in future spintronic devices.

  12. Exploring carrier transport phenomena in a CVD-assembled graphene FET on hexagonal boron nitride.

    Science.gov (United States)

    Kim, Edwin; Jai, Nikhil; Jacobs-Gedri, Robin; Xu, Yang; Yu, Bin

    2012-03-30

    The supporting substrate plays a crucial role in preserving the superb electrical characteristicsof an atomically thin 2D carbon system. We explore carrier transport behavior in achemical-vapor-deposition- (CVD-) assembled graphene monolayer on hexagonal boron nitride (h-BN) substrate. Graphene-channel field-effect transistors (GFETs) were fabricated on ultra-thin h-BN multilayers to screen out carrier scattering from the underlying SiO2 substrate. To explore the transport phenomena, we use three different approaches to extract carrier mobility, namely, effective carrier mobility (μFE), intrinsic carrier mobility (μ), and field-effect mobility (μFE). A comparative study has been conducted based on the electrical characterization results, uncovering the impacts of supporting substrate material and device geometry scaling on carrier mobility in GFETs with CVD-assembled graphene as the active channel.

  13. Prediction of mechanical properties for hexagonal boron nitride nanosheets using molecular mechanics model

    Energy Technology Data Exchange (ETDEWEB)

    Natsuki, Toshiaki [Shinshu University, Faculty of Textile Science and Technology, Ueda (Japan); Shinshu University, Institute of Carbon Science and Technology, Nagano (Japan); Natsuki, Jun [Shinshu University, Institute of Carbon Science and Technology, Nagano (Japan)

    2017-04-15

    Mechanical behaviors of nanomaterials are not easy to be evaluated in the laboratory because of their extremely small size and difficulty controlling. Thus, a suitable model for the estimation of the mechanical properties for nanomaterials becomes very important. In this study, the elastic properties of boron nitride (BN) nanosheets, including the elastic modulus, the shear modulus, and the Poisson's ratio, are predicted using a molecular mechanics model. The molecular mechanics force filed is established to directly incorporate the Morse potential function into the constitutive model of nanostructures. According to the molecular mechanics model, the chirality effect of hexagonal BN nanosheets on the elastic modulus is investigated through a closed-form solution. The simulated result shows that BN nanosheets exhibit an isotropic elastic property. The present analysis yields a set of very simple formulas and is able to be served as a good approximation on the mechanical properties for the BN nanosheets. (orig.)

  14. Catalytically-etched hexagonal boron nitride flakes and their surface activity

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Do-Hyun, E-mail: nanotube@korea.ac.kr [School of Electrical Engineering, Korea University, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Lee, Minwoo; Ye, Bora [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of); Jang, Ho-Kyun; Kim, Gyu Tae [School of Electrical Engineering, Korea University, 5-ga, Anam-dong, Seongbuk-gu, Seoul 136-713 (Korea, Republic of); Lee, Dong-Jin [New Functional Components Research Team, Korea Institute of Footware & Leather Technology, 152 Danggamseo-ro, Busanjin-gu, Busan 614-100 (Korea, Republic of); Kim, Eok-Soo [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of); Kim, Hong Dae, E-mail: hdkim@kitech.re.kr [Green Manufacturing 3Rs R& D Group, Korea Institute of Industrial Technology, Ulsan 681-310 (Korea, Republic of)

    2017-04-30

    Highlights: • Hexagonal boron nitride flakes are etched at low temperature in air by catalysts. • The presence of transition metal oxides produces an etched structure in the flakes. • Etched surfaces become highly active due to vacancy defects formed in the flakes. - Abstract: Hexagonal boron nitride (h-BN) is a ceramic compound which is thermally stable up to 1000 °C in air. Due to this, it is a very challenging task to etch h-BN under air atmosphere at low temperature. In this study, we report that h-BN flakes can be easily etched by oxidation at 350 °C under air atmosphere in the presence of transition metal (TM) oxide. After selecting Co, Cu, and Zn elements as TM precursors, we simply oxidized h-BN sheets impregnated with the TM precursors at 350 °C in air. As a result, microscopic analysis revealed that an etched structure was created on the surface of h-BN flakes regardless of catalyst type. And, X-ray diffraction patterns indicated that the air oxidation led to the formation of Co{sub 3}O{sub 4}, CuO, and ZnO from each precursor. Thermogravimetric analysis showed a gradual weight loss in the temperature range where the weight of h-BN flakes increased by air oxidation. As a result of etching, pore volume and pore area of h-BN flakes were increased after catalytic oxidation in all cases. In addition, the surface of h-BN flakes became highly active when the h-BN samples were etched by Co{sub 3}O{sub 4} and CuO catalysts. Based on these results, we report that h-BN flakes can be easily oxidized in the presence of a catalyst, resulting in an etched structure in the layered structure.

  15. Growth of high-crystalline, single-layer hexagonal boron nitride on recyclable platinum foil.

    Science.gov (United States)

    Kim, Gwangwoo; Jang, A-Rang; Jeong, Hu Young; Lee, Zonghoon; Kang, Dae Joon; Shin, Hyeon Suk

    2013-04-10

    Hexagonal boron nitride (h-BN) is gaining significant attention as a two-dimensional dielectric material, along with graphene and other such materials. Herein, we demonstrate the growth of highly crystalline, single-layer h-BN on Pt foil through a low-pressure chemical vapor deposition method that allowed h-BN to be grown over a wide area (8 × 25 mm(2)). An electrochemical bubbling-based method was used to transfer the grown h-BN layer from the Pt foil onto an arbitrary substrate. This allowed the Pt foil, which was not consumed during the process, to be recycled repeatedly. The UV-visible absorption spectrum of the single-layer h-BN suggested an optical band gap of 6.06 eV, while a high-resolution transmission electron microscopy image of the same showed the presence of distinct hexagonal arrays of B and N atoms, which were indicative of the highly crystalline nature and single-atom thickness of the h-BN layer. This method of growing single-layer h-BN over large areas was also compatible with use of a sapphire substrate.

  16. Vertically self-ordered orientation of nanocrystalline hexagonal boron nitride thin films for enhanced thermal characteristics.

    Science.gov (United States)

    Cometto, Olivier; Sun, Bo; Tsang, Siu Hon; Huang, Xi; Koh, Yee Kan; Teo, Edwin Hang Tong

    2015-12-07

    Vertically self-ordered hexagonal boron nitride (ordered h-BN) is a highly ordered turbostratic BN (t-BN) material similar to hexagonal BN, with its planar structure perpendicularly oriented to the substrate. The ordered h-BN thin films were grown using a High Power Impulse Magnetron Sputtering (HiPIMS) system with a lanthanum hexaboride (LaB6) target reactively sputtered in nitrogen gas. The best vertical alignment was obtained at room temperature, with a grounded bias and a HiPIMS peak power density of 60 W cm(-2). Even though the film contains up to 7.5 at% lanthanum, it retains its highly insulative properties and it was observed that an increase in compressive stress is correlated to an increase in film ordering quality. Importantly, the thermal conductivity of vertically ordered h-BN is considerably high at 5.1 W m(-1) K(-1). The favourable thermal conductivity coupled with the dielectric properties of this novel material and the low temperature growth could outperform SiO2 in high power density electronic applications.

  17. Geometric and electronic structures of monolayer hexagonal boron nitride with multi-vacancy

    Science.gov (United States)

    Kim, Do-Hyun; Kim, Hag-Soo; Song, Min Woo; Lee, Seunghyun; Lee, Sang Yun

    2017-05-01

    Hexagonal boron nitride (h-BN) is an electrical insulator with a large band gap of 5 eV and a good thermal conductor of which melting point reaches about 3000 °C. Due to these properties, much attention was given to the thermal stability rather than the electrical properties of h-BN experimentally and theoretically. In this study, we report calculations that the electronic structure of monolayer h-BN can be influenced by the presence of a vacancy defect which leads to a geometric deformation in the hexagonal lattice structure. The vacancy was varied from mono- to tri-vacancy in a supercell, and different defective structures under the same vacancy density were considered in the case of an odd number of vacancies. Consequently, all cases of vacancy defects resulted in a geometric distortion in monolayer h-BN, and new energy states were created between valence and conduction band with the Fermi level shift. Notably, B atoms around vacancies attracted one another while repulsion happened between N atoms around vacancies, irrespective of vacancy density. The calculation of formation energy revealed that multi-vacancy including more B-vacancies has much lower formation energy than vacancies with more N-vacancies. This work suggests that multi-vacancy created in monolayer h-BN will have more B-vacancies and that the presence of multi-vacancy can make monolayer h-BN electrically conductive by the new energy states and the Fermi level shift.

  18. Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains.

    Science.gov (United States)

    Wu, Qinke; Park, Ji-Hoon; Park, Sangwoo; Jung, Seong Jun; Suh, Hwansoo; Park, Noejung; Wongwiriyapan, Winadda; Lee, Sungjoo; Lee, Young Hee; Song, Young Jae

    2015-11-05

    A monolayer hexagonal boron nitride (h-BN) film with controllable domain morphology and domain size (varying from less than 1 μm to more than 100 μm) with uniform crystalline orientation was successfully synthesized by chemical vapor deposition (CVD). The key for this extremely large single crystalline domain size of a h-BN monolayer is a decrease in the density of nucleation seeds by increasing the hydrogen gas flow during the h-BN growth. Moreover, the well-defined shape of h-BN flakes can be selectively grown by controlling Cu-annealing time under argon atmosphere prior to h-BN growth, which provides the h-BN shape varies in triangular, trapezoidal, hexagonal and complex shapes. The uniform crystalline orientation of h-BN from different nucleation seeds can be easily confirmed by polarized optical microscopy (POM) with a liquid crystal coating. Furthermore, seamlessly merged h-BN flakes without structural domain boundaries were evidence by a selective hydrogen etching after a full coverage of a h-BN film was achieved. This seamless large-area and atomic monolayer of single crystalline h-BN film can offer as an ideal and practical template of graphene-based devices or alternative two-dimensional materials for industrial applications with scalability.

  19. Dielectric and thermal properties of isotactic polypropylene/hexagonal boron nitride composites for high-frequency applications

    International Nuclear Information System (INIS)

    Takahashi, Susumu; Imai, Yusuke; Kan, Akinori; Hotta, Yuji; Ogawa, Hirotaka

    2014-01-01

    Highlights: • The degree of orientation of the hBN could be controlled by the fabrication process. • The dielectric constants of composites ranged between 2.25 and 3.39. • The dielectric loss of composites was on the order of 10 −4 for all compositions. • The thermal conductivity were improved by controlling orientation of hBN. - Abstract: Dielectric composites aimed for high frequency applications were prepared by using anisotropic hexagonal boron nitride (hBN) particles as a fillers and isotactic polypropylene (iPP) as polymer matrix. Dielectric and thermal properties of the composites were studied, focusing on the filler orientation in the plate-shape specimens and filler concentration up to 40 vol%. The degree of orientation of the filler was controlled by the composite fabrication process. Hot-pressing gave relatively random orientation of the filler in the matrix, while injection molding induced a high orientation. Dielectric constant (ε r ) of the composites ranged between 2.25 and 3.39. The estimation of ε r based on the Bruggeman mixing model agreed well with the measured value. Low dielectric losses (tan δ) at microwave frequencies, on the order of 10 −4 , were obtained for all the compositions. Through-thickness thermal conductivity (k) of the hot-pressed samples showed a drastic increase with increasing the filler concentration, reaching up to 2.1 W/m K at 40 vol% of hBN. The filler concentration dependence of k was less significant for the injection molded composites. In-plane thermal expansion was almost independent on the filler orientation, while the coefficient of thermal expansion for the thickness direction of the hot-pressed sample was reduced to approximately half of the injection molded counterpart. These differences in thermal conductivity and thermal expansion are thought to arise from the difference in hBN filler orientation

  20. Dielectric and thermal properties of isotactic polypropylene/hexagonal boron nitride composites for high-frequency applications

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Susumu, E-mail: 143453501@ccalumni.meijo-u.ac.jp [Graduate School of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 4688502 (Japan); Imai, Yusuke [National Institute of Advanced Industrial Science and Technology (AIST), 2268-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560 (Japan); Kan, Akinori [Graduate School of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 4688502 (Japan); Hotta, Yuji [National Institute of Advanced Industrial Science and Technology (AIST), 2268-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560 (Japan); Ogawa, Hirotaka [Graduate School of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 4688502 (Japan)

    2014-12-05

    Highlights: • The degree of orientation of the hBN could be controlled by the fabrication process. • The dielectric constants of composites ranged between 2.25 and 3.39. • The dielectric loss of composites was on the order of 10{sup −4} for all compositions. • The thermal conductivity were improved by controlling orientation of hBN. - Abstract: Dielectric composites aimed for high frequency applications were prepared by using anisotropic hexagonal boron nitride (hBN) particles as a fillers and isotactic polypropylene (iPP) as polymer matrix. Dielectric and thermal properties of the composites were studied, focusing on the filler orientation in the plate-shape specimens and filler concentration up to 40 vol%. The degree of orientation of the filler was controlled by the composite fabrication process. Hot-pressing gave relatively random orientation of the filler in the matrix, while injection molding induced a high orientation. Dielectric constant (ε{sub r}) of the composites ranged between 2.25 and 3.39. The estimation of ε{sub r} based on the Bruggeman mixing model agreed well with the measured value. Low dielectric losses (tan δ) at microwave frequencies, on the order of 10{sup −4}, were obtained for all the compositions. Through-thickness thermal conductivity (k) of the hot-pressed samples showed a drastic increase with increasing the filler concentration, reaching up to 2.1 W/m K at 40 vol% of hBN. The filler concentration dependence of k was less significant for the injection molded composites. In-plane thermal expansion was almost independent on the filler orientation, while the coefficient of thermal expansion for the thickness direction of the hot-pressed sample was reduced to approximately half of the injection molded counterpart. These differences in thermal conductivity and thermal expansion are thought to arise from the difference in hBN filler orientation.

  1. Growth of large single-crystalline two-dimensional boron nitride hexagons on electropolished copper.

    Science.gov (United States)

    Tay, Roland Yingjie; Griep, Mark H; Mallick, Govind; Tsang, Siu Hon; Singh, Ram Sevak; Tumlin, Travis; Teo, Edwin Hang Tong; Karna, Shashi P

    2014-02-12

    Hexagonal-boron nitride (h-BN) or "white graphene" has many outstanding properties including high thermal conductivity, high mechanical strength, chemical inertness, and high electrical resistance, which open up a wide range of applications such as thermal interface material, protective coatings, and dielectric in nanoelectronics that easily exceed the current advertised benefits pertaining to the graphene-based applications. The development of h-BN films using chemical vapor deposition (CVD) has thus far led into nucleation of triangular or asymmetric diamond shapes on different metallic surfaces. Additionally, the average size of the triangular domains has remained relatively small (∼ 0.5 μm(2)) leading to a large number of grain boundaries and defects. While the morphology of Cu surfaces for CVD-grown graphene may have impacts on the nucleation density, domain sizes, thickness, and uniformity, the effects of the decreased roughness of Cu surface to develop h-BN films are unknown. Here, we report the growth and characterization of novel large area h-BN hexagons using highly electropolished Cu substrate under atmospheric pressure CVD conditions. We found that the nucleation density of h-BN is significantly reduced while domain sizes increase. In this study, the largest hexagonal-shape h-BN domain observed is 35 μm(2), which is an order of magnitude larger than a typical triangular domain. As the domains coalesce to form a continuous film, the larger grain size offers a more pristine and smoother film with lesser grain boundaries induced defects.

  2. Mapping the layer count of few-layer hexagonal boron nitride at high lateral spatial resolutions

    Science.gov (United States)

    Mohsin, Ali; Cross, Nicholas G.; Liu, Lei; Watanabe, Kenji; Taniguchi, Takashi; Duscher, Gerd; Gu, Gong

    2018-01-01

    Layer count control and uniformity of two dimensional (2D) layered materials are critical to the investigation of their properties and to their electronic device applications, but methods to map 2D material layer count at nanometer-level lateral spatial resolutions have been lacking. Here, we demonstrate a method based on two complementary techniques widely available in transmission electron microscopes (TEMs) to map the layer count of multilayer hexagonal boron nitride (h-BN) films. The mass-thickness contrast in high-angle annular dark-field (HAADF) imaging in the scanning transmission electron microscope (STEM) mode allows for thickness determination in atomically clean regions with high spatial resolution (sub-nanometer), but is limited by surface contamination. To complement, another technique based on the boron K ionization edge in the electron energy loss spectroscopy spectrum (EELS) of h-BN is developed to quantify the layer count so that surface contamination does not cause an overestimate, albeit at a lower spatial resolution (nanometers). The two techniques agree remarkably well in atomically clean regions with discrepancies within  ±1 layer. For the first time, the layer count uniformity on the scale of nanometers is quantified for a 2D material. The methodology is applicable to layer count mapping of other 2D layered materials, paving the way toward the synthesis of multilayer 2D materials with homogeneous layer count.

  3. Interlayer coupling enhancement in graphene/hexagonal boron nitride heterostructures by intercalated defects or vacancies

    Science.gov (United States)

    Park, Sohee; Park, Changwon; Kim, Gunn

    2014-04-01

    Hexagonal boron nitride (hBN), a remarkable material with a two-dimensional atomic crystal structure, has the potential to fabricate heterostructures with unusual properties. We perform first-principles calculations to determine whether intercalated metal atoms and vacancies can mediate interfacial coupling and influence the structural and electronic properties of the graphene/hBN heterostructure. Metal impurity atoms (Li, K, Cr, Mn, Co, and Cu), acting as extrinsic defects between the graphene and hBN sheets, produce n-doped graphene. We also consider intrinsic vacancy defects and find that a boron monovacancy in hBN acts as a magnetic dopant for graphene, whereas a nitrogen monovacancy in hBN serves as a nonmagnetic dopant for graphene. In contrast, the smallest triangular vacancy defects in hBN are unlikely to result in significant changes in the electronic transport of graphene. Our findings reveal that a hBN layer with some vacancies or metal impurities enhances the interlayer coupling in the graphene/hBN heterostructure with respect to charge doping and electron scattering.

  4. Large-scale fabrication and utilization of novel hexagonal/turbostratic composite boron nitride nanosheets

    KAUST Repository

    Zhong, Bo

    2017-02-15

    In this report, we have developed a scalable approach to massive synthesis of hexagonal/turbostratic composite boron nitride nanosheets (h/t-BNNSs). The strikingly effective, reliable, and high-throughput (grams) synthesis is performed via a facile chemical foaming process at 1400°C utilizing ammonia borane (AB) as precursor. The characterization results demonstrate that high quality of h/t-BNNSs with lateral size of tens of micrometers and thickness of tens of nanometers are obtained. The growth mechanism of h/t-BNNSs is also discussed based on the thermogravimetric analysis of AB which clearly shows two step weight loss. The h/t-BNNSs are further used for making thermoconductive h/t-BNNSs/epoxy resin composites. The thermal conductivity of the composites is obviously improved due to the introduction of h/t-BNNSs. Consideration of the unique properties of boron nitride, these novel h/t-BNNSs are envisaged to be very valuable for future high performance polymer based material fabrication.

  5. Stress field of a near-surface basal screw dislocation in elastically anisotropic hexagonal crystals

    Directory of Open Access Journals (Sweden)

    Valeri S. Harutyunyan

    2017-11-01

    Full Text Available In this study, we derive and analyze the analytical expressions for stress components of the dislocation elastic field induced by a near-surface basal screw dislocation in a semi-infinite elastically anisotropic material with hexagonal crystal lattice. The variation of above stress components depending on “free surface–dislocation” distance (i.e., free surface effect is studied by means of plotting the stress distribution maps for elastically anisotropic crystals of GaN and TiB2 that exhibit different degrees of elastic anisotropy. The dependence both of the image force on a screw dislocation and the force of interaction between two neighboring basal screw dislocations on the “free surface–dislocation” distance is analyzed as well. The influence of elastic anisotropy on the latter force is numerically analyzed for GaN and TiB2 and also for crystals of such highly elastically-anisotropic materials as Ti, Zn, Cd, and graphite. The comparatively stronger effect of the elastic anisotropy on dislocation-induced stress distribution quantified for TiB2 is attributed to the higher degree of elastic anisotropy of this compound in comparison to that of the GaN. For GaN and TiB2, the dislocation stress distribution maps are highly influenced by the free surface effect at “free surface–dislocation” distances roughly smaller than ≈15 and ≈50 nm, respectively. It is found that, for above indicated materials, the relative decrease of the force of interaction between near-surface screw dislocations due to free surface effect is in the order Ti > GaN > TiB2 > Zn > Cd > Graphite that results from increase of the specific shear anisotropy parameter in the reverse order Ti < GaN < TiB2 < Zn < Cd < Graphite. The results obtained in this study are also applicable to the case when a screw dislocation is situated in the “thin film–substrate” system at a (0001 basal interface between the film and substrate provided that the elastic constants

  6. Synthesis of few-layer, large area hexagonal-boron nitride by pulsed laser deposition

    International Nuclear Information System (INIS)

    Glavin, Nicholas R.; Jespersen, Michael L.; Check, Michael H.; Hu, Jianjun; Hilton, Al M.; Fisher, Timothy S.; Voevodin, Andrey A.

    2014-01-01

    Pulsed laser deposition (PLD) has been investigated as a technique for synthesis of ultra-thin, few-layer hexagonal boron nitride (h-BN) thin films on crystalline highly ordered pyrolytic graphite (HOPG) and sapphire (0001) substrates. The plasma-based processing technique allows for increased excitations of deposited atoms due to background nitrogen gas collisional ionizations and extended resonance time of the energetic species presence at the condensation surface. These processes permit growth of thin, polycrystalline h-BN at 700 °C, a much lower temperature than that required by traditional growth methods. Analysis of the as-deposited films reveals epitaxial-like growth on the nearly lattice matched HOPG substrate, resulting in a polycrystalline h-BN film, and amorphous BN (a-BN) on the sapphire substrates, both with thicknesses of 1.5–2 nm. Stoichiometric films with boron-to-nitrogen ratios of unity were achieved by adjusting the background pressure within the deposition chamber and distance between the target and substrate. The reduction in deposition temperature and formation of stoichiometric, large-area h-BN films by PLD provide a process that is easily scaled-up for two-dimensional dielectric material synthesis and also present a possibility to produce very thin and uniform a-BN. - Highlights: • PLD was used to synthesize boron nitride thin films on HOPG and sapphire substrates. • Lattice matched substrate allowed for formation of polycrystalline h-BN. • Nitrogen gas pressure directly controlled film chemistry and structure. • Technique allows for ultrathin, uniform films at reduced processing temperatures

  7. Defect-Based Modulation of Optoelectronic Properties for Biofunctionalized Hexagonal Boron Nitride Nanosheets.

    Science.gov (United States)

    Shakourian-Fard, Mehdi; Heydari, Hadiseh; Kamath, Ganesh

    2017-09-06

    Defect engineering potentially allows for dramatic tuning of the optoelectronic properties of two-dimensional materials. With the help of DFT calculations, a systematic study of DNA nucleobases adsorbed on hexagonal boron-nitride nanoflakes (h-BNNFs) with boron (V B ) and nitrogen (V N ) monovacancies is presented. The presence of V N and V B defects increases the binding strength of nucleobases by 9 and 34 kcal mol -1 , respectively (h-BNNF-V B >h-BNNF-V N >h-BNNF). A more negative electrostatic potential at the V B site makes the h-BNNF-V B surface more reactive than that of h-BNNF-V N , enabling H-bonding interactions with nucleobases. This binding energy difference affects the recovery time-a significant factor for developing DNA biosensors-of the surfaces in the order h-BNNF-V B >h-BNNF-V N >h-BNNF. The presence of V B and V N defect sites increases the electrical conductivity of the h-BNNF surface, V N defects being more favorable than V B sites. The blueshift of absorption peaks of the h-BNNF-V B -nucleobase complexes, in contrast to the redshift observed for h-BNNF-V N -nucleobase complexes, is attributed to their observed differences in binding energies, the HOMO-LUMO energy gap and other optoelectronic properties. Time-dependent DFT calculations reveal that the monovacant boron-nitride-sheet-nucleobase composites absorb visible light in the range 300-800 nm, thus making them suitable for light-emitting devices and sensing nucleobases in the visible region. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Ultraclean and large-area monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition.

    Science.gov (United States)

    Wen, Yao; Shang, Xunzhong; Dong, Ji; Xu, Kai; He, Jun; Jiang, Chao

    2015-07-10

    Atomically thin hexagonal boron nitride (h-BN) has been demonstrated to be an excellent dielectric layer as well as an ideal van der Waals epitaxial substrate for fabrication of two-dimensional (2D) atomic layers and their vertical heterostructures. Although many groups have obtained large-scale monolayer h-BN through low pressure chemical vapor deposition (LPCVD), it is still a challenge to grow clean monolayers without the reduction of domain size. Here we report the synthesis of large-area (4 × 2 cm(2)) high quality monolayer h-BN with an ultraclean and unbroken surface on copper foil by using LPCVD. A detailed investigation of the key factors affecting growth and transfer of the monolayer was carried out in order to eliminate the adverse effects of impurity particles. Furthermore, an optimized transfer approach allowed the nondestructive and clean transfer of the monolayer from copper foil onto an arbitrary substrate, including a flexible substrate, under mild conditions. Atomic force microscopy indicated that the root-mean-square (RMS) roughness of the monolayer h-BN on SiO2 was less than 0.269 nm for areas with fewer wrinkles. Selective area electron diffraction analysis of the h-BN revealed a pattern of hexagonal diffraction spots, which unambiguously demonstrated its highly crystalline character. Our work paves the way toward the use of ultraclean and large-area monolayer h-BN as the dielectric layer in the fabrication of high performance electronic and optoelectronic devices for novel 2D atomic layer materials.

  9. Ultraclean and large-area monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition

    Science.gov (United States)

    Wen, Yao; Shang, Xunzhong; Dong, Ji; Xu, Kai; He, Jun; Jiang, Chao

    2015-07-01

    Atomically thin hexagonal boron nitride (h-BN) has been demonstrated to be an excellent dielectric layer as well as an ideal van der Waals epitaxial substrate for fabrication of two-dimensional (2D) atomic layers and their vertical heterostructures. Although many groups have obtained large-scale monolayer h-BN through low pressure chemical vapor deposition (LPCVD), it is still a challenge to grow clean monolayers without the reduction of domain size. Here we report the synthesis of large-area (4 × 2 cm2) high quality monolayer h-BN with an ultraclean and unbroken surface on copper foil by using LPCVD. A detailed investigation of the key factors affecting growth and transfer of the monolayer was carried out in order to eliminate the adverse effects of impurity particles. Furthermore, an optimized transfer approach allowed the nondestructive and clean transfer of the monolayer from copper foil onto an arbitrary substrate, including a flexible substrate, under mild conditions. Atomic force microscopy indicated that the root-mean-square (RMS) roughness of the monolayer h-BN on SiO2 was less than 0.269 nm for areas with fewer wrinkles. Selective area electron diffraction analysis of the h-BN revealed a pattern of hexagonal diffraction spots, which unambiguously demonstrated its highly crystalline character. Our work paves the way toward the use of ultraclean and large-area monolayer h-BN as the dielectric layer in the fabrication of high performance electronic and optoelectronic devices for novel 2D atomic layer materials.

  10. Spin-Mechanical Scheme with Color Centers in Hexagonal Boron Nitride Membranes

    Science.gov (United States)

    Abdi, Mehdi; Hwang, Myung-Joong; Aghtar, Mortaza; Plenio, Martin B.

    2017-12-01

    Recently observed quantum emitters in hexagonal boron nitride (hBN) membranes have a potential for achieving high accessibility and controllability thanks to the lower spatial dimension. Moreover, these objects naturally have a high sensitivity to vibrations of the hosting membrane due to its low mass density and high elasticity modulus. Here, we propose and analyze a spin-mechanical system based on color centers in a suspended hBN mechanical resonator. Through group theoretical analyses and ab initio calculation of the electronic and spin properties of such a system, we identify a spin doublet ground state and demonstrate that a spin-motion interaction can be engineered, which enables ground-state cooling of the mechanical resonator. We also present a toolbox for initialization, rotation, and readout of the defect spin qubit. As a result, the proposed setup presents the possibility for studying a wide range of physics. To illustrate its assets, we show that a fast and noise-resilient preparation of a multicomponent cat state and a squeezed state of the mechanical resonator is possible; the latter is achieved by realizing the extremely detuned, ultrastrong coupling regime of the Rabi model, where a phonon superradiant phase transition is expected to occur.

  11. Tribological evaluation of hexagonal boron nitride in modified jatropha oil as sustainable metalworking fluid

    Science.gov (United States)

    Talib, Norfazillah; Rahim, Erween Abd.; Nasir, Ramdziah Md.

    2017-11-01

    The used of metalworking fluids (MWFs) from petroleum-based oil during machining process contributed negative impact to the humans and environment. Therefore, bio-based oil from vegetable oil was recently explored as an alternative solution to petroleum-based oil to implement sustainable manufacturing process. In this study, modified jatropha oil (MJO5) with and without hexagonal boron nitride (hBN) particles were evaluated through friction and wear test and orthogonal cutting performance in comparison with synthetic ester (SE). MJO5 were mixed with hBN particles at various concentrations (i.e. 0.05, 0.1 and 0.5wt.%). Experimental results showed that the addition of 0.05wt.% of hBN particles in MJO5 (MJO5a) provided lowest coefficient of friction (COF) and smallest wear scar diameter (WSD). MJO5a has the best anti-friction ability by reducing the cutting force and cutting temperature which related to the formation of thinner chips and small tool-chip contact length. MJO5a is the best substitute to SE as sustainable MWFs in the machining operation in regards to the environmental and health concern.

  12. Tunable thermal rectification in graphene/hexagonal boron nitride hybrid structures

    Science.gov (United States)

    Chen, Xue-Kun; Hu, Ji-Wen; Wu, Xi-Jun; Jia, Peng; Peng, Zhi-Hua; Chen, Ke-Qiu

    2018-02-01

    Using non-equilibrium molecular dynamics simulations, we investigate thermal rectification (TR) in graphene/hexagonal boron nitride (h-BN) hybrid structures. Two different structural models, partially substituting graphene into h-BN (CBN) and partially substituting h-BN into graphene (BNC), are considered. It is found that CBN has a significant TR effect while that of BNC is very weak. The observed TR phenomenon can be attributed to the resonance effect between out-of-plane phonons of graphene and h-BN domains in the low-frequency region under negative temperature bias. In addition, the influences of ambient temperature, system size, defect number and substrate interaction are also studied to obtain the optimum conditions for TR. More importantly, the TR ratio could be effectively tuned through chemical and structural diversity. A moderate C/BN ratio and parallel arrangement are found to enhance the TR ratio. Detailed phonon spectra analyses are conducted to understand the thermal transport behavior. This work extends hybrid engineering to 2D materials for achieving TR.

  13. Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride

    Science.gov (United States)

    Kamalakar, M. Venkata; Dankert, André; Bergsten, Johan; Ive, Tommy; Dash, Saroj P.

    2014-01-01

    The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic architectures through demonstrations of ultrahigh electron mobilities and charge-based tunnel transistors. Here, we expand the functional horizon of such 2D materials demonstrating the quantum tunneling of spin polarized electrons through atomic planes of CVD grown h-BN. We report excellent tunneling behavior of h-BN layers together with tunnel spin injection and transport in graphene using ferromagnet/h-BN contacts. Employing h-BN tunnel contacts, we observe enhancements in both spin signal amplitude and lifetime by an order of magnitude. We demonstrate spin transport and precession over micrometer-scale distances with spin lifetime up to 0.46 nanosecond. Our results and complementary magnetoresistance calculations illustrate that CVD h-BN tunnel barrier provides a reliable, reproducible and alternative approach to address the conductivity mismatch problem for spin injection into graphene. PMID:25156685

  14. The effect of water absorption on the dielectric properties of polyethylene hexagonal boron nitride nanocomposites

    Science.gov (United States)

    Ayoob, Raed; Alhabill, Fuad N.; Andritsch, Thomas; Vaughan, Alun S.

    2018-02-01

    The effect of water absorption on the dielectric response of polyethylene/hexagonal boron nitride nanocomposites has been studied by dielectric spectroscopy. The nanocomposites have been prepared with hBN concentrations ranging from 2 wt% to 30 wt%. Fourier transform infrared spectroscopy and thermogravimetric analysis revealed a very small amount of hydroxyl groups on the surface of hBN. Mass loss measurements showed that the nanocomposites did not absorb any water under ambient and dry conditions while there was some water absorption under wet conditions. The dielectric spectroscopy results showed a broad relaxation peak, indicative of different states of water with water shells of different thickness, which moved to higher frequencies with increasing water content. However, the dielectric losses were significantly lower than the losses reported in the literature of nanocomposites under wet conditions. In addition, all the absorbed water was successfully removed under vacuum conditions which demonstrated that the interactions between the water and the nanocomposites were very weak, due to the hydrophobic nature of the hBN surface. This is a highly useful property, when considering these materials for applications in electrical insulation.

  15. Hydrogen storage performance of functionalized hexagonal boron nitride for fuel cell applications

    Science.gov (United States)

    Muthu, R. Naresh; Rajashabala, S.; Kannan, R.

    2017-05-01

    Developing light weight, safe, efficient and compact hydrogen storage medium are still the major concerns for the blooming of hydrogen based energy economy. In the present article, activated hexagonal boron nitride (ABN) and ABN functionalized with lithium borohydride (ABN-LiBH4) nanocomposite based hydrogen storage medium are synthesized. where a facile solvent-assistant technique was adopted for the preparation of ABN-LiBH4 nanocomposite. The prepared hydrogen storage medium was subjected to various characterization techniques such as XRD, FTIR, SEM, EDX, CHNS - elemental analysis and TGA. Sievert's-like hydrogenation setup has been utilized for hydrogenation studies. It is noticed that the ABN-LiBH4 nanocomposite exhibits an attractive high gravimetric density of 1.67 wt% at 100 °C than pristine ABN. Moreover the stored hydrogen is released in the temperature range of 115 - 150 °C and possesses an average binding energy of 0.31 eV. These results indicate that the prepared ABN-LiBH4 nanocomposite paves a way to potential solid state hydrogen storage medium towards fuel cell technology as per the targets set by US Department of Energy (DOE).

  16. Hexagonal boron nitride nanoparticles decorated halloysite clay nanotubes as a potential hydrogen storage medium

    Energy Technology Data Exchange (ETDEWEB)

    Muthu, R. Naresh, E-mail: rnaresh7708@gmail.com; Rajashabala, S. [School of Physics, Madurai Kamaraj University, Madurai-625021, Tamil Nadu (India); Kannan, R. [Department of Physics, University College of Engineering, Anna University, Dindigul-624622 (India); Department of Materials Science and Engineering, Cornell University, Ithaca 14850, New York (United States)

    2016-05-23

    The light weight and compact hydrogen storage materials is still prerequisite for the carbon free hydrogen fuel cell technology. In this work, the hydrogen storage performance of acid treated halloysite clay nanotubes (A-HNTs) and hexagonal boron nitride (h-BN) nanoparticles decorated acid treated halloysite nanoclay composite (A-HNT-h-BN) are demonstrated, where facile ultrasonic technique is adopted for the synthesis of A-HNT-h-BN nanoclay composite. Hydrogen storage studies were carried out using Sieverts-like hydrogenation setup. The A-HNTs and A-HNT-h-BN nanoclay composite were analyzed by XRD, FTIR, HRTEM, EDX, CHNS-elemental analysis and TGA. The A-HNT-h-BN nanoclay composite shows superior storage capacity of 2.19 wt% at 50 °C compared to the A-HNTs (0.58 wt%). A 100% desorption of stored hydrogen is noted in the temperature range of 138–175 °C. The average binding energy of hydrogen was found to be 0.34 eV for the prepared A-HNT-h-BN nanoclay composite. The excellent storage capability of A-HNT-h-BN nanoclay composite towards hydrogen at ambient temperature may find bright perspective in hydrogen fuel cell technology in near future.

  17. Hexagonal boron nitride nanoparticles decorated halloysite clay nanotubes as a potential hydrogen storage medium

    International Nuclear Information System (INIS)

    Muthu, R. Naresh; Rajashabala, S.; Kannan, R.

    2016-01-01

    The light weight and compact hydrogen storage materials is still prerequisite for the carbon free hydrogen fuel cell technology. In this work, the hydrogen storage performance of acid treated halloysite clay nanotubes (A-HNTs) and hexagonal boron nitride (h-BN) nanoparticles decorated acid treated halloysite nanoclay composite (A-HNT-h-BN) are demonstrated, where facile ultrasonic technique is adopted for the synthesis of A-HNT-h-BN nanoclay composite. Hydrogen storage studies were carried out using Sieverts-like hydrogenation setup. The A-HNTs and A-HNT-h-BN nanoclay composite were analyzed by XRD, FTIR, HRTEM, EDX, CHNS-elemental analysis and TGA. The A-HNT-h-BN nanoclay composite shows superior storage capacity of 2.19 wt% at 50 °C compared to the A-HNTs (0.58 wt%). A 100% desorption of stored hydrogen is noted in the temperature range of 138–175 °C. The average binding energy of hydrogen was found to be 0.34 eV for the prepared A-HNT-h-BN nanoclay composite. The excellent storage capability of A-HNT-h-BN nanoclay composite towards hydrogen at ambient temperature may find bright perspective in hydrogen fuel cell technology in near future.

  18. Hexagonal boron nitride nanoparticles decorated halloysite clay nanotubes as a potential hydrogen storage medium

    Science.gov (United States)

    Muthu, R. Naresh; Rajashabala, S.; Kannan, R.

    2016-05-01

    The light weight and compact hydrogen storage materials is still prerequisite for the carbon free hydrogen fuel cell technology. In this work, the hydrogen storage performance of acid treated halloysite clay nanotubes (A-HNTs) and hexagonal boron nitride (h-BN) nanoparticles decorated acid treated halloysite nanoclay composite (A-HNT-h-BN) are demonstrated, where facile ultrasonic technique is adopted for the synthesis of A-HNT-h-BN nanoclay composite. Hydrogen storage studies were carried out using Sieverts-like hydrogenation setup. The A-HNTs and A-HNT-h-BN nanoclay composite were analyzed by XRD, FTIR, HRTEM, EDX, CHNS-elemental analysis and TGA. The A-HNT-h-BN nanoclay composite shows superior storage capacity of 2.19 wt% at 50 °C compared to the A-HNTs (0.58 wt%). A 100% desorption of stored hydrogen is noted in the temperature range of 138-175 °C. The average binding energy of hydrogen was found to be 0.34 eV for the prepared A-HNT-h-BN nanoclay composite. The excellent storage capability of A-HNT-h-BN nanoclay composite towards hydrogen at ambient temperature may find bright perspective in hydrogen fuel cell technology in near future.

  19. Humidity effects on the electrical properties of hexagonal boron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Soltani, A. [Institut d' Electronique, de Microelectronique et de Nanotechnologie/CNRS UMR 8520, Cite Scientifique, Avenue Poincare, 59652 Villeneuve d' Ascq (France)]. E-mail: ali.soltani@iemn.univ-lille1.fr; Thevenin, P. [Laboratoire Materiaux Optiques Photonique et Systemes/CNRS FRE 2304, Universite de Metz and Supelec, 2 rue Edouard Belin, 57070 Metz (France); Bakhtiar, H. [Faculty of Science, Physics Department, Technology University of Malaysia, Karung Berkunci 791, 80990, Johor Bahru, Johor (Malaysia); Bath, A. [Laboratoire Materiaux Optiques Photonique et Systemes/CNRS FRE 2304, Universite de Metz and Supelec, 2 rue Edouard Belin, 57070 Metz (France)]. E-mail: bath@metz.supelec.fr

    2005-01-03

    Thin films of hexagonal boron nitride (h-BN) were grown by a plasma enhanced chemical vapour deposition (PECVD) technique. The quality of the films was assessed by infrared spectroscopy, microRaman spectroscopy as a function of annealing temperature and by X-ray photoelectron spectroscopy. The films proved to be thermally stable up to 1370 K. Current-voltage measurements were performed, as a function of humidity, using metal-insulator-semiconductor and metal-insulator-metal structures. Typical resistivities were found in the range 10{sup 13}-10{sup 14} {omega} cm in dry air and exhibit high sensitivity against humidity. The influence of the mean orientation of the c-axis of the BN films was considered. Sawtooth voltage pulse trains were also applied. Threshold switching phenomena were observed, but only in atmosphere containing humidity. The values of the switching voltages depend strongly on the relative humidity (RH), on the characteristics of the applied sawtooth voltage pulse trains, as well as on the nature of the metallic electrode.

  20. Tunable room-temperature single photon emission from atomic defects in hexagonal boron nitride

    Science.gov (United States)

    Grosso, Gabriele; Moon, Hyowon; Lienhard, Benjamin; Efetov, Dmitri; Furchi, Marco; Jarillo-Herrero, Pablo; Ali, Sajid; Ford, Michael; Aharonovich, Igor; Englund, Dirk

    Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. We demonstrate that strain control allows spectral tunability of hBN single photon emitters, and material processing sharply improves the single-photon purity. Our sample fabrication process relies on ion irradiation and high temperature annealing to isolate individual defects for single photon emission. Spectroscopy on this emitter reports high single photon purity of g(2)(0) =0.07, and high count rates exceeding 107 counts/sec at saturation. Furthermore, these emitters are stable to material transfer to other substrates, including a bendable beam that allows us to controllably apply strain. Our experiments indicate a maximum tuning of 6 meV and emission energy dependencies ranging from -3 to 6 meV/%. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.

  1. Atomically-Precise Layer Controlled Synthesis and Characterization of cm-Scale Hexagonal Boron Nitride.

    Science.gov (United States)

    Lin, W.-H.; Brar, V. W.; Jariwala, D.; Sherrott, M. C.; Tseng, W.-S.; Wu, C.-I.; Yeh, N.-C.; Atwater, H. A.

    Hexagonal boron nitride is the most promising two-dimensional insulator for device applications because of its large band gap and low density of charged impurities in addition to being isostructural and isoelectronic with graphene. Here we report the synthesis of h-BN films over cm2 area on Cu foils via chemical vapor deposition, with layer control from 1 to 20 layers. We have characterized these large-area h-BN films at both atomic and macroscopic scales. Raman and infrared spectroscopy indicate the presence of B-N bonds and reveal a linear dependence of thickness with growth time. X-ray photoelectron spectroscopy provides the film stoichiometry, showing the B/N atom ratio to be 1 for all thicknesses. Atomically resolved STM images of monolayer h-BN films on graphene and Au substrates display both the atomic h-BN honeycomb lattice and a Moiré superlattice between h-BN and graphene. Electrical current transport in Au/h-BN/Au heterostructures indicates that these h-BN films behave like excellent tunnel barriers and also possess a high value of the hard-breakdown field strength. Our large-area h-BN films are therefore structurally, chemically and electronically uniform over cm2 areas. Department of Energy DE-FG02- 07ER46405 and DE-SC0001293.

  2. Tuning dissociation using isoelectronically doped graphene and hexagonal boron nitride: Water and other small molecules

    Energy Technology Data Exchange (ETDEWEB)

    Al-Hamdani, Yasmine S. [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Alfè, Dario [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Earth Sciences, University College London, Gower Street, London WC1E 6BT (United Kingdom); Lilienfeld, O. Anatole von [Institute of Physical Chemistry and National Center for Computational Design and Discovery of Novel Materials (MARVEL), Department of Chemistry, University of Basel, Klingelbergstrasse 80, CH-4056 Basel (Switzerland); Michaelides, Angelos, E-mail: angelos.michaelides@ucl.ac.uk [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom)

    2016-04-21

    Novel uses for 2-dimensional materials like graphene and hexagonal boron nitride (h-BN) are being frequently discovered especially for membrane and catalysis applications. Still however, a great deal remains to be understood about the interaction of environmentally and industrially relevant molecules such as water with these materials. Taking inspiration from advances in hybridising graphene and h-BN, we explore using density functional theory, the dissociation of water, hydrogen, methane, and methanol on graphene, h-BN, and their isoelectronic doped counterparts: BN doped graphene and C doped h-BN. We find that doped surfaces are considerably more reactive than their pristine counterparts and by comparing the reactivity of several small molecules, we develop a general framework for dissociative adsorption. From this a particularly attractive consequence of isoelectronic doping emerges: substrates can be doped to enhance their reactivity specifically towards either polar or non-polar adsorbates. As such, these substrates are potentially viable candidates for selective catalysts and membranes, with the implication that a range of tuneable materials can be designed.

  3. High-Velocity Saturation in Graphene Encapsulated by Hexagonal Boron Nitride.

    Science.gov (United States)

    Yamoah, Megan A; Yang, Wenmin; Pop, Eric; Goldhaber-Gordon, David

    2017-10-24

    We measure drift velocity in monolayer graphene encapsulated by hexagonal boron nitride (hBN), probing its dependence on carrier density and temperature. Due to the high mobility (>5 × 10 4 cm 2 /V/s) of our samples, the drift velocity begins to saturate at low electric fields (∼0.1 V/μm) at room temperature. Comparing results to a canonical drift velocity model, we extract room-temperature electron saturation velocities ranging from 6 × 10 7 cm/s at a low carrier density of 8 × 10 11 cm -2 to 2.7 × 10 7 cm/s at a higher density of 4.4 × 10 12 cm -2 . Such drift velocities are much higher than those in silicon (∼10 7 cm/s) and in graphene on SiO 2 , likely due to reduced carrier scattering with surface optical phonons whose energy in hBN (>100 meV) is higher than that in other substrates.

  4. Tuning the Schottky rectification in graphene-hexagonal boron nitride-molybdenum disulfide heterostructure.

    Science.gov (United States)

    Liu, Biao; Zhao, Yu-Qing; Yu, Zhuo-Liang; Wang, Lin-Zhi; Cai, Meng-Qiu

    2017-12-04

    It was still a great challenge to design high performance of rectification characteristic for the rectifier diode. Lately, a new approach was proposed experimentally to tune the Schottky barrier height (SBH) by inserting an ultrathin insulated tunneling layer to form metal-insulator-semiconductor (MIS) heterostructures. However, the electronic properties touching off the high performance of these heterostructures and the possibility of designing more efficient applications for the rectifier diode were not presently clear. In this paper, the structural, electronic and interfacial properties of the novel MIS diode with the graphene/hexagonal boron nitride/monolayer molybdenum disulfide (GBM) heterostructure had been investigated by first-principle calculations. The calculated results showed that the intrinsic properties of graphene and MoS 2 were preserved due to the weak van der Waals contact. The height of interfacial Schottky barrier can be tuned by the different thickness of hBN layers. In addition, the GBM Schottky diode showed more excellent rectification characteristic than that of GM Schottky diode due to the interfacial band bending caused by the epitaxial electric field. Based on the electronic band structure, we analyzed the relationship between the electronic structure and the nature of the Schottky rectifier, and revealed the potential of utilizing GBM Schottky diode for the higher rectification characteristic devices. Copyright © 2017 Elsevier Inc. All rights reserved.

  5. Defect-selective dry etching for quick and easy probing of hexagonal boron nitride domains

    Science.gov (United States)

    Wu, Qinke; Lee, Joohyun; Park, Sangwoo; Woo, Hwi Je; Lee, Sungjoo; Song, Young Jae

    2018-03-01

    In this study, we demonstrate a new method to selectively etch the point defects or the boundaries of as-grown hexagonal boron nitride (hBN) films and flakes in situ on copper substrates using hydrogen and argon gases. The initial quality of the chemical vapor deposition-grown hBN films and flakes was confirmed by UV–vis absorption spectroscopy, atomic force microscopy, and transmission electron microscopy. Different gas flow ratios of Ar/H2 were then employed to etch the same quality of samples and it was found that etching with hydrogen starts from the point defects and grows epitaxially, which helps in confirming crystalline orientations. However, etching with argon is sensitive to line defects (boundaries) and helps in visualizing the domain size. Finally, based on this defect-selective dry etching technique, it could be visualized that the domains of a polycrystalline hBN monolayer merged together with many parts, even with those that grew from a single nucleation seed.

  6. Polarization and angular sensibility in the natural hyperbolic hexagonal boron nitride arrays

    Science.gov (United States)

    Cheng, Le; Wang, Tao; Jiang, Xiaoyun; Yan, Xicheng; Xiao, Shuyuan

    2017-11-01

    This paper demonstrates a tunable and flexible metamaterial with the cuboid hexagonal boron nitride (h-BN) arrays on a dielectric substrate. We numerically investigated the effect of the polarization together with the incident angle of the probe light on the transmission spectra of metamaterials and designed different geometric structures tuning the resonant frequency near the Reststrahlen bands of the h-BN in the mid-infrared. We further simulated the electric field distribution and calculated charge density associated to the specific responses that respectively exhibit the strong electric dipole resonances between the adjacent unit cells and inside the h-BN cuboids. The results show that both the positions of the resonance and the coupling strength strongly depend on geometric construction and corresponding external excitation condition. Hence the amplitude of the resonance can be actively modulated via altering excitation conditions and the metamaterial arrays can be designed to control the resonance in different spectra positions. Such metamaterials are important for its strong anisotropy and the extraordinary sensitivity which may find numerous applications in the design of metamaterials with specific sensing, nonlinear optical response and imaging capabilities creating new avenues for the development of devices in the mid-infrared.

  7. Enhanced microwave absorption properties of graphite nanoflakes by coating hexagonal boron nitride nanocrystals

    KAUST Repository

    Zhong, Bo

    2017-05-31

    We report herein the synthesis of a novel hexagonal boron nitride nanocrystal/graphite nanoflake (h-BNNC/GNF) composite through a wet-chemistry coating of graphite nanoflakes and subsequent in-situ thermal treatment process. The characterization results of X-ray diffraction, scanning electron microscope, transmission electron microscope, energy dispersive X-ray spectrum, and X-ray photoelectron spectroscopy demonstrate that h-BNNCs with diameter of tens of nanometers are highly crystallized and anchored on the surfaces of graphite nanoflakes without obvious aggregation. The minimum reflection loss (RL) value of the h-BNNC/GNF based absorbers could reach −32.38dB (>99.99% attenuation) with the absorber thickness of 2.0mm. This result is superior to the other graphite based and some dielectric loss microwave absorption materials recently reported. Moreover, the frequency range where the RL is less than −10dB is 3.49-17.28GHz with the corresponding thickness of 5.0 to 1.5mm. This reveals a better electromagnetic microwave absorption performance of h-BNNC/GNFs from the X-band to the Ku-band. The remarkable enhancement of the electromagnetic microwave absorption properties of h-BNNC/GNFs can be assigned to the increase of multiple scattering, interface polarization as well as the improvement of the electromagnetic impedance matching of graphite nanoflakes after being coated with h-BNNCs.

  8. Graphene-Hexagonal Boron Nitride Heterostructure as a Tunable Phonon–Plasmon Coupling System

    Directory of Open Access Journals (Sweden)

    Sheng Qu

    2017-02-01

    Full Text Available The layered van der Waals (vdW heterostructure, assembled from monolayer graphene, hexagonal boron nitride (h-BN and other atomic crystals in various combinations, is emerging as a new paradigm with which to attain desired electronic and optical properties. In this paper, we study theoretically the mid-infrared optical properties of the vdW heterostructure based on the graphene–h-BN system. The light–matter interaction of this heterostructure system is described by the hyperbolic phonon–plasmon polaritons which originate from the coupling modes of surface plasmon polaritons (SPPs in graphene with hyperbolic phonon polaritons (HPPs in h-BN. By numerical simulation, we find that the coupling modes are governed by the Fermi level of monolayer graphene, the thickness of the h-BN slab and the mode excitation sequence of SPPs and HPPs. Moreover, the response of the coupling modes of the graphene–h-BN heterostructure on a noble metal layer is also proposed in this paper.

  9. Catalytic Directional Cutting of Hexagonal Boron Nitride: The Roles of Interface and Etching Agents.

    Science.gov (United States)

    Ma, Liang; Zeng, Xiao Cheng

    2017-05-10

    Transition-metal (TM) nanoparticle catalyzed cutting has been proven to be an efficient approach to carve out straight channels in graphene to produce high-quality nanoribbons. However, the applicability of such a catalytic approach to hexagonal boron nitride (h-BN) is still an open question due to binary element compositions. Here, our ab initio study indicates that long and straight channels along either the zigzag or the armchair direction of the BN sheet can be carved out, driven by the energetically favored TM-zigzag or TM-armchair BN interface, regardless of roughness of the TM particle surface. Optimal experimental conditions for the catalytic cutting of either BN or BN/graphene hybrid sheet across the domain boundary are proposed via the analysis of the competition between TM-BN (or TM-graphene) interface and H-terminated BN (or graphene) edge. The computation results can serve to guide the experimental design for the production of highly uniform BN (or hybrid BN/graphene) nanoribbons with atomically smooth edges.

  10. Ultra-thin epitaxial films of graphite and hexagonal boron nitride on solid surfaces

    CERN Document Server

    Oshima, C

    1997-01-01

    In this article, we have reviewed the recent progress of the experimental studies on ultra-thin films of graphite and hexagonal boron nitride (h-BN) by using angle-resolved electron spectroscopy together with other techniques. The fundamental properties of these high-quality films are discussed on the basis of the data on dispersion relations of valence electrons, phonon dispersion etc. The interfacial orbital mixing of the pi-state of the monolayer graphite (MG) with the d states of the reactive substrates is the origin for the phonon softening, expansion of the nearest-neighbour C-C distance, modification of the pi-band, low work function, and two-dimensional plasmons with high electron density, etc. In the cases of weak mixing at the interface between the MG and relatively inert substrates, the observed properties of the MG are very close to the bulk ones. In contrast to the case for MG, the interfacial interaction between the h-BN monolayer and the substrate is weak. (author)

  11. Localized emission from laser-irradiated defects in 2D hexagonal boron nitride

    Science.gov (United States)

    Hou, Songyan; Danang Birowosuto, Muhammad; Umar, Saleem; Ange Anicet, Maurice; Yingjie Tay, Roland; Coquet, Philippe; Tay, Beng Kang; Wang, Hong; Teo, Edwin Hang Tong

    2018-01-01

    Hexagonal boron nitride (hBN) has emerged as a promising two-dimensional (2D) material for photonics device due to its large bandgap and flexibility in nanophotonic circuits. Here, we report bright and localized luminescent centres can be engineered in hBN monolayers and flakes using laser irradiation. The transition from hBN to cBN emerges in laser irradiated hBN large monolayers while is absent in processed hBN flakes. Remarkably, the colour centres in hBN flakes exhibit room temperature cleaner single photon emissions with g 2(0) ranging from 0.20 to 0.42, a narrower line width of 1.4 nm and higher brightness compared with monolayers. Our results pave the way to engineering deterministic defects in hBN induced by laser pulse and show great prospect for application of defects in hBN used as nano-size light source in photonics.

  12. Quasiparticle Band Gaps of Graphene and Graphone on Hexagonal Boron Nitride Substrate

    Science.gov (United States)

    Kharche, Neerav; Nayak, Saroj

    2012-02-01

    Graphene holds great promise for post-silicon electronics; however, it faces two main challenges: opening up a band gap and finding a suitable substrate material. Graphene on hexagonal boron nitride (hBN) substrate provides a potential system to overcome these challenges. While theoretical studies suggested a possibility of a finite band gap of graphene on hBN, recent experimental studies find no band gap. We have studied graphene-hBN system using the first-principles density functional method and the many-body perturbation theory within GW approximation [1]. A Bernal stacked graphene on hBN has a band gap on the order of 0.1 eV, which disappears when graphene is misaligned with respect to hBN. The latter is the likely scenario in realistic devices. In contrast, if graphene supported on hBN is hydrogenated, the resulting system (graphone) exhibits band gaps larger than 2.5 eV. The graphone band gap is due to chemical functionalization and is robust in the presence of misalignment, however, it reduces by about 1 eV due to the polarization effects at the graphone/hBN interface.[4pt] [1] N. Kharche and S. K. Nayak, Nano Lett., DOI: 10.1021/nl202725w, (2011).

  13. Layered insulator hexagonal boron nitride for surface passivation in quantum dot solar cell

    International Nuclear Information System (INIS)

    Shanmugam, Mariyappan; Jain, Nikhil; Jacobs-Gedrim, Robin; Yu, Bin; Xu, Yang

    2013-01-01

    Single crystalline, two dimensional (2D) layered insulator hexagonal boron nitride (h-BN), is demonstrated as an emerging material candidate for surface passivation on mesoporous TiO 2 . Cadmium selenide (CdSe) quantum dot based bulk heterojunction (BHJ) solar cell employed h-BN passivated TiO 2 as an electron acceptor exhibits photoconversion efficiency ∼46% more than BHJ employed unpassivated TiO 2 . Dominant interfacial recombination pathways such as electron capture by TiO 2 surface states and recombination with hole at valence band of CdSe are efficiently controlled by h-BN enabled surface passivation, leading to improved photovoltaic performance. Highly crystalline, confirmed by transmission electron microscopy, dangling bond-free 2D layered h-BN with self-terminated atomic planes, achieved by chemical exfoliation, enables efficient passivation on TiO 2 , allowing electronic transport at TiO 2 /h-BN/CdSe interface with much lower recombination rate compared to an unpassivated TiO 2 /CdSe interface

  14. Solution-Processed Dielectrics Based on Thickness-Sorted Two-Dimensional Hexagonal Boron Nitride Nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Jian; Kang, Joohoon; Kang, Junmo; Jariwala, Deep; Wood, Joshua D.; Seo, Jung-Woo T.; Chen, Kan-Sheng; Marks, Tobin J.; Hersam, Mark C.

    2015-10-14

    Gate dielectrics directly affect the mobility, hysteresis, power consumption, and other critical device metrics in high-performance nanoelectronics. With atomically flat and dangling bond-free surfaces, hexagonal boron nitride (h-BN) has emerged as an ideal dielectric for graphene and related two-dimensional semiconductors. While high-quality, atomically thin h-BN has been realized via micromechanical cleavage and chemical vapor deposition, existing liquid exfoliation methods lack sufficient control over h-BN thickness and large-area film quality, thus limiting its use in solution-processed electronics. Here, we employ isopycnic density gradient ultracentrifugation for the preparation of monodisperse, thickness-sorted h-BN inks, which are subsequently layer-by-layer assembled into ultrathin dielectrics with low leakage currents of 3 × 10–9 A/cm2 at 2 MV/cm and high capacitances of 245 nF/cm2. The resulting solution-processed h-BN dielectric films enable the fabrication of graphene field-effect transistors with negligible hysteresis and high mobilities up to 7100 cm2 V–1 s–1 at room temperature. These h-BN inks can also be used as coatings on conventional dielectrics to minimize the effects of underlying traps, resulting in improvements in overall device performance. Overall, this approach for producing and assembling h-BN dielectric inks holds significant promise for translating the superlative performance of two-dimensional heterostructure devices to large-area, solution-processed nanoelectronics.

  15. Toward achieving flexible and high sensitivity hexagonal boron nitride neutron detectors

    Science.gov (United States)

    Maity, A.; Grenadier, S. J.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2017-07-01

    Hexagonal boron nitride (h-BN) detectors have demonstrated the highest thermal neutron detection efficiency to date among solid-state neutron detectors at about 51%. We report here the realization of h-BN neutron detectors possessing one order of magnitude enhancement in the detection area but maintaining an equal level of detection efficiency of previous achievement. These 3 mm × 3 mm detectors were fabricated from 50 μm thick freestanding and flexible 10B enriched h-BN (h-10BN) films, grown by metal organic chemical vapor deposition followed by mechanical separation from sapphire substrates. Mobility-lifetime results suggested that holes are the majority carriers in unintentionally doped h-BN. The detectors were tested under thermal neutron irradiation from californium-252 (252Cf) moderated by a high density polyethylene moderator. A thermal neutron detection efficiency of ˜53% was achieved at a bias voltage of 200 V. Conforming to traditional solid-state detectors, the realization of h-BN epilayers with enhanced electrical transport properties is the key to enable scaling up the device sizes. More specifically, the present results revealed that achieving an electrical resistivity of greater than 1014 Ωṡcm and a leakage current density of below 3 × 10-10 A/cm2 is needed to fabricate large area h-BN detectors and provided guidance for achieving high sensitivity solid state neutron detectors based on h-BN.

  16. APCVD hexagonal boron nitride thin films for passive near-junction thermal management of electronics

    Science.gov (United States)

    KC, Pratik; Rai, Amit; Ashton, Taylor S.; Moore, Arden L.

    2017-12-01

    The ability of graphene to serve as an ultrathin heat spreader has been previously demonstrated with impressive results. However, graphene is electrically conductive, making its use in contact with electronic devices problematic from a reliability and integration perspective. As an alternative, hexagonal boron nitride (h-BN) is a similarly structured material with large in-plane thermal conductivity but which possesses a wide band gap, thereby giving it potential to be utilized for directing contact, near-junction thermal management of electronics without shorting or the need for an insulating intermediate layer. In this work, the viability of using large area, continuous h-BN thin films as direct contact, near-junction heat spreaders for electronic devices is experimentally evaluated. Thin films of h-BN several square millimeters in size were synthesized via an atmospheric pressure chemical vapor deposition (APCVD) method that is both simple and scalable. These were subsequently transferred onto a microfabricated test device that simulated a multigate transistor while also allowing for measurements of the device temperature at various locations via precision resistance thermometry. Results showed that these large-area h-BN films with thicknesses of 77–125 nm are indeed capable of significantly lowering microdevice temperatures, with the best sample showing the presence of the h-BN thin film reduced the effective thermal resistance by 15.9% ± 4.6% compared to a bare microdevice at the same power density. Finally, finite element simulations of these experiments were utilized to estimate the thermal conductivity of the h-BN thin films and identify means by which further heat spreading performance gains could be attained.

  17. Large scale graphene/hexagonal boron nitride heterostructure for tunable plasmonics

    KAUST Repository

    Zhang, Kai

    2013-09-01

    Vertical integration of hexagonal boron nitride (h-BN) and graphene for the fabrication of vertical field-effect transistors or tunneling diodes has stimulated intense interest recently due to the enhanced performance offered by combining an ultrathin dielectric with a semi-metallic system. Wafer scale fabrication and processing of these heterostructures is needed to make large scale integrated circuitry. In this work, by using remote discharged, radio-frequency plasma chemical vapor deposition, wafer scale, high quality few layer h-BN films are successfully grown. By using few layer h-BN films as top gate dielectric material, the plasmon energy of graphene can be tuned by electrostatic doping. An array of graphene/h-BN vertically stacked micrometer-sized disks is fabricated by lithography and transfer techniques, and infrared spectroscopy is used to observe the modes of tunable graphene plasmonic absorption as a function of the repeating (G/h-BN)n units in the vertical stack. Interestingly, the plasmonic resonances can be tuned to higher frequencies with increasing layer thickness of the disks, showing that such vertical stacking provides a viable strategy to provide wide window tuning of the plasmons beyond the limitation of the monolayer. An array of graphene/h-BN vertically stacked micrometer-sized disks is fabricated by lithography and transfer techniques, and infrared spectroscopy is used to observe the modes of tunable graphene plasmonic absorption as a function of the repeating (G/h-BN)n units in the vertical stack. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Anticorrosive performance of waterborne epoxy coatings containing water-dispersible hexagonal boron nitride (h-BN) nanosheets

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Mingjun [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100039 (China); Ren, Siming [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); University of Chinese Academy of Sciences, Beijing 100039 (China); Chen, Jia; Liu, Shuan [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhang, Guangan [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Zhao, Haichao, E-mail: zhaohaichao@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Wang, Liping, E-mail: wangliping@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Xue, Qunji, E-mail: qjxue@lzb.ac.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

    2017-03-01

    Highlights: • Hexagonal boron nitride nanosheets were well dispersed by using water-soluble carboxylated aniline trimer as dispersant. • The best corrosion performance of waterborne epoxy coatings was achieved with the addition of 1 wt% h-BN. • The decrease of the pores and defects of coating matrix inhibits the diffusion and water absorption of corrosive medium in the coating. - Abstract: Homogenous dispersion of hexagonal boron nitride (h-BN) nanosheets in solvents or in the polymer matrix is crucial to initiate their many applications. Here, homogeneous dispersion of hexagonal boron nitride (h-BN) in epoxy matrix was achieved with a water-soluble carboxylated aniline trimer derivative (CAT{sup −}) as a dispersant, which was attributed to the strong π-π interaction between h-BN and CAT{sup −}, as proved by Raman and UV–vis spectra. Transmission electron microscopy (TEM) analysis confirmed a random dispersion of h-BN nanosheets in the waterborne epoxy coatings. The deterioration process of water-borne epoxy coating with and without h-BN nanosheets during the long-term immersion in 3.5 wt% NaCl solution was investigated by electrochemical measurements and water absorption test. Results implied that the introduction of well dispersed h-BN nanosheets into waterborne epoxy system remarkably improved the corrosion protection performance to substrate. Moreover, 1 wt% BN/EP composite coated substrate exhibited higher impedance modulus (1.3 × 10{sup 6} Ω cm{sup 2}) and lower water absorption (4%) than those of pure waterborne epoxy coating coated electrode after long-term immersion in 3.5 wt% NaCl solution, demonstrating its superior anticorrosive performance. This enhanced anticorrosive performance was mainly ascribed to the improved water barrier property of epoxy coating via incorporating homogeneously dispersed h-BN nanosheets.

  19. Preparation of high-content hexagonal boron nitride composite film and characterization of atomic oxygen erosion resistance

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yu; Li, Min; Gu, Yizhuo; Wang, Shaokai, E-mail: wsk@buaa.edu.cn; Zhang, Zuoguang

    2017-04-30

    Highlights: • Hexagonal boron nitride nanosheets can be well exfoliated with the help of nanofibrillated cellulose. • A carpet-like rough surface and distortion in crystal structure of h-BN are found in both h-BN film and h-BN/epoxy film after AO exposure. • H-BN/epoxy film exhibits a higher mass loss and erosion yield, different element content changes and chemical oxidations compared with h-BN film. - Abstract: Space aircrafts circling in low earth orbit are suffered from highly reactive atomic oxygen (AO). To shield AO, a flexible thin film with 80 wt.% hexagonal boron nitride (h-BN) and h-BN/epoxy film were fabricated through vacuum filtration and adding nanofibrillated cellulose fibers. H-BN nanosheets were hydroxylated for enhancing interaction in the films. Mass loss and erosion yield at accumulated AO fluence about 3.04 × 10{sup 20} atoms/cm{sup 2} were adopted to evaluate the AO resistance properties of the films. A carpet-like rough surface, chemical oxidations and change in crystal structure of h-BN were found after AO treatment, and the degrading mechanism was proposed. The mass loss and erosion yield under AO attack were compared between h-BN film and h-BN/epoxy film, and the comparison was also done for various types of shielding AO materials. Excellent AO resistance property of h-BN film is shown, and the reasons are analyzed.

  20. Interfacial-Bonding-Regulated CO Oxidation over Pt Atoms Immobilized on Gas-Exfoliated Hexagonal Boron Nitride

    KAUST Repository

    Liu, Xin

    2017-10-12

    We compared the electronic structure and CO oxidation mechanisms over Pt atoms immobilized by both B-vacancies and N-vacancies on gas-exfoliated hexagonal boron nitride. We showed that chemical bonds are formed between the B atoms associated with dangling bonds around the vacancies and Pt atoms. These bonds not only alter the thermodynamics and kinetics for the aggregation and effectively immobilize Pt atoms, but also significantly change the composition and energetic distribution of the electronic states of the composites to circumvent CO poisoning and to favour coadsorption of CO and O2, which further regulates the reactions to proceed through a Langmuir-Hinshelwood mechanism. The CO oxidation over Pt atoms immobilized at N-vacancies involves formation of an intermediate with –C(O)-O−O- bonded to Pt, the generation of CO2 by peroxo O−O bond scission and the reduction of the remnant oxygen, and the calculated energy barriers are 0.49, 0.23 and 0.18 eV, respectively. Such small energy barriers are comparable to those over Pt atoms trapped at B-vacancies, showing the effectiveness of Pt/hexagonal boron nitride atomic composites as catalysts for CO oxidation. These findings also suggest the feasibility of regulating the reaction pathways over single atom catalysts via interfacial engineering.

  1. Prediction of Two-Dimensional Phase of Boron with Anisotropic Electric Conductivity.

    Science.gov (United States)

    Cui, Zhi-Hao; Jimenez-Izal, Elisa; Alexandrova, Anastassia N

    2017-03-16

    Two-dimensional (2D) phases of boron are rare and unique. Here we report a new 2D all-boron phase (named the π phase) that can be grown on a W(110) surface. The π phase, composed of four-membered rings and six-membered rings filled with an additional B atom, is predicted to be the most stable on this support. It is characterized by an outstanding stability upon exfoliation off of the W surface, and unusual electronic properties. The chemical bonding analysis reveals the metallic nature of this material, which can be attributed to the multicentered π-bonds. Importantly, the calculated conductivity tensor is anisotropic, showing larger conductivity in the direction of the sheet that is in-line with the conjugated π-bonds, and diminished in the direction where the π-subsystems are connected by single σ-bonds. The π-phase can be viewed as an ultrastable web of aligned conducting boron wires, possibly of interest to applications in electronic devices.

  2. Rich interfacial chemistry and properties of carbon-doped hexagonal boron nitride nanosheets revealed by electronic structure calculations

    Science.gov (United States)

    Xie, Wei; Tamura, Takahiro; Yanase, Takashi; Nagahama, Taro; Shimada, Toshihiro

    2018-04-01

    The effect of C doping to hexagonal boron nitride (h-BN) to its electronic structure is examined by first principles calculations using the association from π-electron systems of organic molecules embedded in a two-dimensional insulator. In a monolayered carbon-doped structure, odd-number doping with carbon atoms confers metallic properties with different work functions. Various electronic interactions occur between two layers with odd-number carbon substitution. A direct sp3 covalent chemical bond is formed when C replaces adjacent B and N in different layers. A charge transfer complex between layers is found when C replaces B and N in the next-neighboring region, which results in narrower band gaps (e.g., 0.37 eV). Direct bonding between C and B atoms is found when two C atoms in different layers are at a certain distance.

  3. Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-scaled interconnect technology

    Directory of Open Access Journals (Sweden)

    Yong-Jun Li

    2012-03-01

    Full Text Available We proposed intercalation of hexagonal boron nitride (hBN in multilayer graphene to improve its performance in ultra-scaled interconnects for integrated circuit. The effect of intercalated hBN layer in bilayer graphene is investigated using non-equilibrium Green's functions. We find the hBN intercalated bilayer graphene exhibit enhanced transport properties compared with pristine bilayer ones, and the improvement is attributed to suppression of interlayer scattering and good planar bonding condition of inbetween hBN layer. Based on these results, we proposed a via structure that not only benefits from suppressed interlayer scattering between multilayer graphene, but also sustains the unique electrical properties of graphene when many graphene layers are stacking together. The ideal current density across the structure can be as high as 4.6×109 A/cm2 at 1V, which is very promising for the future high-performance interconnect.

  4. Influence of self-consistent screening and polarizability contractions on interlayer sliding behavior of hexagonal boron nitride

    Science.gov (United States)

    Gong, Wenbin; Zhang, Wei; Wang, Chengbin; Yao, Yagang; Lu, Weibang

    2017-11-01

    The interlayer sliding behaviors of hexagonal boron nitride (h -BN) were investigated via a density functional theory approach with dispersion interaction included. It was found that the self-consistent screening effect (SCS) and the polarizability contractions had significant influences on London dispersion forces, which are responsible for not only the stacking modes but also for the sliding behaviors of h -BN. In consideration of the ionic characteristics of h -BN, surprisingly, the calculated dispersion force was found to dominate the electrostatic interaction along a minimum-energy sliding pathway and make a pronounced contribution (˜35 %) to the barrier during the constrained sliding. This study demonstrates that the SCS and polarizability contractions play important roles in the sliding behaviors of h -BN and that the long-range dispersion interaction should be carefully treated, even in systems with ionic characteristics.

  5. Hexagonal Boron Nitride Impregnated Silane Composite Coating for Corrosion Resistance of Magnesium Alloys for Temporary Bioimplant Applications

    Directory of Open Access Journals (Sweden)

    Saad Al-Saadi

    2017-11-01

    Full Text Available Magnesium and its alloys are attractive potential materials for construction of biodegradable temporary implant devices. However, their rapid degradation in human body fluid before the desired service life is reached necessitate the application of suitable coatings. To this end, WZ21 magnesium alloy surface was modified by hexagonal boron nitride (hBN-impregnated silane coating. The coating was chemically characterised by Raman spectroscopy. Potentiodynamic polarisation and electrochemical impedance spectroscopy (EIS of the coated alloy in Hanks’ solution showed a five-fold improvement in the corrosion resistance of the alloy due to the composite coating. Post-corrosion analyses corroborated the electrochemical data and provided a mechanistic insight of the improvement provided by the composite coating.

  6. Ionizing and Non-ionizing Radiation Effects in Thin Layer Hexagonal Boron Nitride

    Science.gov (United States)

    2015-03-01

    ray energy, x is the thickness of the h-BN or Si region, Gammaφ is the gamma flux of the cobalt 60 source, and t is the irradiation time... Boron Nitride Thin Films Grown by Atomic Layer Deposition," Thin Solid Films, no. 571, pp. 51-55, 2014. [8] H. X . Chen, X . G. Zhao, Z. J. Ma, Y. Li...Gehrke and U. Vetter, "Modeling the diode characteristics of boron nitride/silicon carbide heterojunctions," Applied Physics Letters, vol. 97, 2010

  7. Molecular Beam Epitaxial Growth and Characterization of Graphene and Hexagonal Boron Nitride Two-Dimensional Layers

    Science.gov (United States)

    Zheng, Renjing

    Van der Waals (vdW) materials (also called as two-dimensional (2D) material in some literature) systems have received extensive attention recently due to their potential applications in next-generation electronics platform. Exciting properties have been discovered in this field, however, the performance and properties of the systems rely on the materials' quality and interface significantly, leading to the urgent need for scalable synthesis of high-quality vdW crystals and heterostructures. Toward this direction, this dissertation is devoted on the study of Molecular Beam Epitaxy (MBE) growth and various characterization of vdW materials and heterostructures, especially graphene and hexagonal boron nitride (h-BN). The goal is to achieve high-quality vdW materials and related heterostructures. There are mainly four projects discussed in this dissertation. The first project (Chapter 2) is about MBE growth of large-area h-BN on copper foil. After the growth, the film was transferred onto SiO2 substrate for characterization. It is observed that as-grown film gives evident h-BN Raman spectrum; what's more, h-BN peak intensity and position is dependent on film thickness. N-1s and B-1s XPS peaks further suggest the formation of h-BN. AFM and SEM images show the film is flat and continuous over large area. Our synthesis method shows it's possible to use MBE to achieve h-BN growth and could also pave a way for some unique structure, such as h-BN/graphene heterostructures and doped h-BN films by MBE. The second project (Chapter 3) is focused on establishment of grapehene/h-BN heterostructure on cobalt (Co) film. In-situ epitaxial growth of graphene/h-BN heterostructures on Co film substrate was achieved by using plasma-assisted MBE. The direct graphene/h-BN vertical stacking structures were demonstrated and further confirmed by various characterizations, such as Raman spectroscopy, SEM, XPS and TEM. Large area heterostructures consisting of single- /bilayer graphene and

  8. Ni foam assisted synthesis of high quality hexagonal boron nitride with large domain size and controllable thickness

    Science.gov (United States)

    Ying, Hao; Li, Xiuting; Li, Deshuai; Huang, Mingqiang; Wan, Wen; Yao, Qian; Chen, Xiangping; Wang, Zhiwei; Wu, Yanqing; Wang, Le; Chen, Shanshan

    2018-04-01

    The scalable synthesis of two-dimensional (2D) hexagonal boron nitride (h-BN) is of great interest for its numerous applications in novel electronic devices. Highly-crystalline h-BN films, with single-crystal sizes up to hundreds of microns, are demonstrated via a novel Ni foam assisted technique reported here for the first time. The nucleation density of h-BN domains can be significantly reduced due to the high boron solubility, as well as the large specific surface area of the Ni foam. The crystalline structure of the h-BN domains is found to be well aligned with, and therefore strongly dependent upon, the underlying Pt lattice orientation. Growth-time dependent experiments confirm the presence of a surface mediated self-limiting growth mechanism for monolayer h-BN on the Pt substrate. However, utilizing remote catalysis from the Ni foam, bilayer h-BN films can be synthesized breaking the self-limiting effect. This work provides further understanding of the mechanisms involved in the growth of h-BN and proposes a facile synthesis technique that may be applied to further applications in which control over the crystal alignment, and the numbers of layers is crucial.

  9. Effects of deposition temperature and ammonia flow on metal-organic chemical vapor deposition of hexagonal boron nitride

    Science.gov (United States)

    Rice, Anthony; Allerman, Andrew; Crawford, Mary; Beechem, Thomas; Ohta, Taisuke; Spataru, Catalin; Figiel, Jeffrey; Smith, Michael

    2018-03-01

    The use of metal-organic chemical vapor deposition at high temperature is investigated as a means to produce epitaxial hexagonal boron nitride (hBN) at the wafer scale. Several categories of hBN films were found to exist based upon precursor flows and deposition temperature. Low, intermediate, and high NH3 flow regimes were found to lead to fundamentally different deposition behaviors. The low NH3 flow regimes yielded discolored films of boron sub-nitride. The intermediate NH3 flow regime yielded stoichiometric films that could be deposited as thick films. The high NH3 flow regime yielded self-limited deposition with thicknesses limited to a few mono-layers. A Langmuir-Hinshelwood mechanism is proposed to explain the onset of self-limited behavior for the high NH3 flow regime. Photoluminescence characterization determined that the intermediate and high NH3 flow regimes could be further divided into low and high temperature behaviors with a boundary at 1500 °C. Films deposited with both high NH3 flow and high temperature exhibited room temperature free exciton emission at 210 nm and 215.9 nm.

  10. Impact of tensile strain on the thermal transport of zigzag hexagonal boron nitride nanoribbon: An equilibrium molecular dynamics study

    Science.gov (United States)

    Navid, Ishtiaque Ahmed; Intisar Khan, Asir; Subrina, Samia

    2018-02-01

    The thermal conductivity of single layer strained hexagonal boron nitride nanoribbon (h-BNNR) has been computed using the Green—Kubo formulation of Equilibrium Molecular Dynamics (EMD) simulation. We have investigated the impact of strain on thermal transport of h-BNNR by varying the applied tensile strain from 1% upto 5% through uniaxial loading. The thermal conductivity of h-BNNR decreases monotonically with the increase of uniaxial tensile strain keeping the sample size and temperature constant. The thermal conductivity can be reduced upto 86% for an applied uniaxial tensile strain of 5%. The impact of temperature and width variation on the thermal conductivity of h-BNNR has also been studied under different uniaxial tensile strain conditions. With the increase in temperature, the thermal conductivity of strained h-BNNR exhibits a decaying characteristics whereas it shows an opposite pattern with the increasing width. Such study would provide a good insight on the strain tunable thermal transport for the potential device application of boron nitride nanostructures.

  11. Anomalous response of supported few-layer hexagonal boron nitride to DC electric fields: a confined water effect?

    Science.gov (United States)

    Oliveira, Camilla; Matos, Matheus; Mazzoni, Mário; Chacham, Hélio; Neves, Bernardo

    2013-03-01

    Hexagonal boron nitride (h-BN) is a two-dimensional compound from III-V family, with the atoms of boron and nitrogen arranged in a honeycomb lattice, similar to graphene. Unlike graphene though, h-BN is an insulator material, with a gap larger than 5 eV. Here, we use Electric Force Microscopy (EFM) to study the electrical response of mono and few-layers of h-BN to an electric field applied by the EFM tip. Our results show an anomalous behavior in the dielectric response for h-BN for different bias orientation: for a positive bias applied to the tip, h-BN layers respond with a larger dielectric constant than the dielectric constant of the silicon dioxide substrate; while for a negative bias, the h-BN dielectric constant is smaller than the dielectric constant of the substrate. Based on first-principles calculations, we showed that this anomalous response may be interpreted as a macroscopic consequence of confinement of a thin water layer between h-BN and substrate. These results were confirmed by sample annealing and also also by a comparative analysis with h-BN on a non-polar substrate. All the authors acknowledge financial support from CNPq, Fapemig, Rede Nacional de Pesquisa em Nanotubos de Carbono and INCT-Nano-Carbono.

  12. Copper atoms embedded in hexagonal boron nitride as potential catalysts for CO oxidation: A first-principles investigation

    KAUST Repository

    Liu, Xin

    2014-01-01

    We addressed the electronic structure of Cu atoms embedded in hexagonal boron nitride (h-BN) and their catalytic role in CO oxidation by first-principles-based calculations. We showed that Cu atoms prefer to bind directly with the localized defects on h-BN, which act as strong trapping sites for Cu atoms and inhibit their clustering. The strong binding of Cu atoms at boron vacancy also up-shifts the energy level of Cu-d states to the Fermi level and promotes the formation of peroxide-like intermediate. CO oxidation over Cu atoms embedded in h-BN would proceed through the Langmuir-Hinshelwood mechanism with the formation of a peroxide-like complex by reaction of coadsorbed CO and O2, with the dissociation of which the a CO2 molecule and an adsorbed O atom are formed. Then, the embedded Cu atom is regenerated by the reaction of another gaseous CO with the remnant O atom. The calculated energy barriers for the formation and dissociation of peroxide complex and regeneration of embedded Cu atoms are as low as 0.26, 0.11 and 0.03 eV, respectively, indicating the potential high catalytic performance of Cu atoms embedded in h-BN for low temperature CO oxidation. © the Partner Organisations 2014.

  13. Shear-induced phase transition of nanocrystalline hexagonal boron nitride to wurtzitic structure at room temperature and lower pressure.

    Science.gov (United States)

    Ji, Cheng; Levitas, Valery I; Zhu, Hongyang; Chaudhuri, Jharna; Marathe, Archis; Ma, Yanzhang

    2012-11-20

    Disordered structures of boron nitride (BN), graphite, boron carbide (BC), and boron carbon nitride (BCN) systems are considered important precursor materials for synthesis of superhard phases in these systems. However, phase transformation of such materials can be achieved only at extreme pressure-temperature conditions, which is irrelevant to industrial applications. Here, the phase transition from disordered nanocrystalline hexagonal (h)BN to superhard wurtzitic (w)BN was found at room temperature under a pressure of 6.7 GPa after applying large plastic shear in a rotational diamond anvil cell (RDAC) monitored by in situ synchrotron X-ray diffraction (XRD) measurements. However, under hydrostatic compression to 52.8 GPa, the same hBN sample did not transform to wBN but probably underwent a reversible transformation to a high-pressure disordered phase with closed-packed buckled layers. The current phase-transition pressure is the lowest among all reported direct-phase transitions from hBN to wBN at room temperature. Usually, large plastic straining leads to disordering and amorphization; here, in contrast, highly disordered hBN transformed to crystalline wBN. The mechanisms of strain-induced phase transformation and the reasons for such a low transformation pressure are discussed. Our results demonstrate a potential of low pressure-room temperature synthesis of superhard materials under plastic shear from disordered or amorphous precursors. They also open a pathway of phase transformation of nanocrystalline materials and materials with disordered and amorphous structures under extensive shear.

  14. Computer simulation of STM images of vertical heterostructures of graphene/hexagonal boron nitride with intercalated atoms

    Science.gov (United States)

    Kim, Gunn; Lee, Junsu

    Using density functional theory, we did computational simulations of scanning tunneling microscopy of vertical graphene/hexagonal boron nitride heterostructures with an intercalated atom (Li, K, Cr, Mn, Co or Cu). A plane-wave basis set was employed with a kinetic energy of 400 eV. The form of the Perdew-Burke-Ernzerhof type was utilized for the exchange-correlation energy functional. To obtain the more accurate result, the van der Waals interaction was also considered. In the computer-simulated scanning tunneling microscopy (STM) images in the Tersoff-Hamann scheme, we demonstrated that the single impurity atom between Gr and hBN sheets is detectable. We observed three different STM patterns on the graphene side. These can be classified by group 1 (Li, Co, and Cu), group 2 (Cr and Mn), and group 3 (K), which have hexagonal, circular, and wide bright spot patterns around the impurity atom, respectively. Although Co and Cu are both in group 1, the Co atom shows stronger d orbital character than the Cu atom. Interestingly, in the case of the Co atom, the simulated STM images are quite different at bias voltages of -0.1 V and +0.1 V. While C pz-Co dyz hybridization occurs at the bias voltage of -0.1 V, C pz-Co dxz hybridization occurs at the bias voltage of +0.1 V. GK and JL were supported by the Basic Science Research program (2013R1A2009131) through the National Research Foundation of Korea.

  15. Pauli magnetic susceptibility of bilayer graphene and hexagonal boron-nitride

    Energy Technology Data Exchange (ETDEWEB)

    Mousavi, Hamze, E-mail: hamze.mousavi@gmail.com [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of); Jalilvand, Samira [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of); Kurdestany, Jamshid Moradi [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65201 (United States)

    2016-12-01

    We study the contribution of s and p orbitals on the Pauli magnetic susceptibility (PMS) and density of state (DOS) of the following three structures (1) bilayer graphene (2) bilayer boron-nitride (BN) and (3) bilayer graphene-BN within a two-band tight-binding Harrison Hamiltonian and the Green's function technique. It is shown that in all three cases, the contribution of s and p{sub x} or p{sub y} orbitals have no states around the Fermi level, while for bilayer graphene and graphene-BN the total DOS and DOS of p{sub z} orbital appear to be a linear function around this level. We show explicitly that for bilayer BN the contribution of p{sub z} orbital does not have states around the Fermi level, because of ionization energy difference between the boron (B) and nitrogen (N) atoms. We find that the bandwidth of s, p{sub x} or p{sub y} is more extension than case of p{sub z} orbital as a result of the Van-Hove singularities in the DOS. This leads to consideration of the PMS in two, low and high temperature, regions.

  16. Stability and electronic structure of iron nanoparticle anchored on defective hexagonal boron nitrogen nanosheet: A first-principle study

    International Nuclear Information System (INIS)

    Lin, Sen; Huang, Jing; Ye, Xinxin

    2014-01-01

    Highlights: • Fe 13 nanoparticle strongly interacts with the monovacancy of h-BN nanosheet. • Significant charges are transferred from Fe 13 to the defective h-BN nanosheet. • The upshift of d-band center makes the surface Fe atoms of supported Fe 13 with higher reactivity. - Abstract: By first-principle methods, we investigate the stability and electronic structures of Fe 13 nanoparticles anchored on hexagonal boron nitrogen nanosheets (h-BNNSs) with monovacancy defect sites. It is found that the defect sites such as boron and nitrogen vacancy significantly increase the adsorption energies of Fe 13 , suggesting that the supported Fe 13 nanoparticles should be very stable against sintering at high temperatures. From the calculated density of states, we testify that the strong interaction is attributed to the coupling between the 3d orbitals of Fe atoms with the sp 2 dangling bonds at the defect sites. The Bader charge and differential charge density analyses reveal that there is significant charge redistribution at the interface between Fe 13 and the substrates, leading to positive charges located on most of the Fe atoms. Additionally, our results show that the strong binding of the nanoparticle results in the upshift of d-band center of Fe 13 toward the Fermi level, thus making the surface Fe atoms with higher reactivity. This work gives a detailed understanding the interaction between Fe 13 nanoparticle and defective h-BNNS and will provide helpful instructions in the design and synthesis of supported Fe-based catalysts in heterogeneous catalysis

  17. Engineering the interface characteristics on the enhancement of field electron emission properties of vertically aligned hexagonal boron nitride nanowalls

    Energy Technology Data Exchange (ETDEWEB)

    Sankaran, K.J.; Hoang, D.Q.; Drijkoningen, S.; Pobedinskas, P.; Haenen, K. [Institute for Materials Research (IMO), Hasselt University, Diepenbeek (Belgium); IMOMEC, IMEC vzw, Diepenbeek (Belgium); Srinivasu, K.; Leou, K.C. [Department of Engineering and System Science, National Tsing Hua University, Hsinchu (China); Korneychuk, S.; Turner, S.; Verbeeck, J. [Electron Microscopy for Materials Science (EMAT), University of Antwerp (Belgium); Lin, I.N. [Department of Physics, Tamkang University, Tamsui (China)

    2016-10-15

    Utilization of Au and nanocrystalline diamond (NCD) as interlayers noticeably modifies the microstructure and field electron emission (FEE) properties of hexagonal boron nitride nanowalls (hBNNWs) grown on Si substrates. The FEE properties of hBNNWs on Au could be turned on at a low turn-on field of 14.3 V μm{sup -1}, attaining FEE current density of 2.58 mA cm{sup -2} and life-time stability of 105 min. Transmission electron microscopy reveals that the Au-interlayer nucleates the hBN directly, preventing the formation of amorphous boron nitride (aBN) in the interface, resulting in enhanced FEE properties. But Au forms as droplets on the Si substrate forming again aBN at the interface. Conversely, hBNNWs on NCD shows superior in life-time stability of 287 min although it possesses inferior FEE properties in terms of larger turn-on field and lower FEE current density as compared to that of hBNNWs-Au. The uniform and continuous NCD film on Si also circumvents the formation of aBN phases and allows hBN to grow directly on NCD. Incorporation of carbon in hBNNWs from the NCD-interlayer improves the conductivity of hBNNWs, which assists in transporting the electrons efficiently from NCD to hBNNWs that results in better field emission of electrons with high life-time stability. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Hexagonal boron nitride nanosheets as a multifunctional background-free matrix to detect small molecules and complicated samples by MALDI mass spectrometry.

    Science.gov (United States)

    Wang, Jianing; Sun, Jie; Wang, Jiyun; Liu, Huihui; Xue, Jinjuan; Nie, Zongxiu

    2017-07-18

    Here we report the innovation of using hexagonal boron nitride (h-BN) nanosheets as the first background-free matrix among the full laser pulse energy range for the analysis and imaging of small molecule metabolites and as an adsorbent for the enrichment of samples. Due to its totally free background and high efficiency as an adsorbent and matrix, h-BN has promising prospects in metabolomics, MALDI imaging, and environmental analysis.

  19. Hydrogen purification performance of a nanoporous hexagonal boron nitride membrane: molecular dynamics and first-principle simulations.

    Science.gov (United States)

    Darvish Ganji, Masoud; Dodangeh, Razieh

    2017-05-17

    Membranes have attracted much attention for the efficient separation of gas mixtures, due to their specific structural and unique properties. In this work, density functional theory (DFT) and molecular dynamic (MD) simulations have been employed to evaluate the performance of nanoporous hexagonal boron nitride (h-BN) monolayers for hydrogen purification. Various porous membranes were designed, and full structural relaxation was carried out by using DFT calculations and then MD simulations to investigate the H 2 purification performance of the nanoporous h-BN membranes. It was found that the selectivity for H 2 gas over N 2 gas was highly sensitive to the type and width of the pores. The h-BN membrane containing pores with short and long sides both of about 3 Å (pore 1B-3N) demonstrated optimal selectivity for H 2 molecules, while the permeability of the pore 5B-5N + 4H membrane (short side of about 4.4 Å) was much higher than that of other counterparts. Furthermore, DFT calculations were performed to validate the MD simulation observations as well as to explain the selectivity performance of the most desirable pore membrane. We demonstrated that the 1B-3N pore is a far superior membrane to other counterparts and exhibits an excellent potential for applications in hydrogen purification, clean energy combustion, and the design of novel membranes for gas separation.

  20. Modulation of the band structure in bilayer zigzag graphene nanoribbons on hexagonal boron nitride using the force and electric fields

    International Nuclear Information System (INIS)

    Ilyasov, V.V.; Nguyen, Chuong V.; Ershov, I.V.; Nguyen, Chien D.; Hieu, Nguyen N.

    2015-01-01

    Modulation of semiconductor–halfmetal–metal transition in the antiferromagnetic (AF) ordering of bilayer zigzag graphene nanoribbons (BZGNRs) on hexagonal boron nitride (h-BN) heterostructure using the external force field F ext and transverse electric fields E ext (in the presence of interaction with the substrate) was performed within the framework of the density functional theory (DFT). We established critical values of E ext and interlayer distance in the bilayer providing for semiconductor–halfmetal–metal transition in one of electron spin configurations. Our calculations also show that the energy gap E g in the AF-BZGNR/h-BN(0001) heterostructure can be controlled in a wide range of the F ext and E ext . This makes the AF-8-ZGNR/h-BN(0001) heterostructure being potentially promising for application in spintronic devices. - Highlights: • We used DFT to examine the opportunities for modulation of the band structure in AF-8-BZGNR/h-BN(0001). • We estimated the critical values of the F ext and E ext providing for SC-HM-M transition. • The energy gap in the AF-BZGNR/h-BN(0001) can be monitored in a wide range of the F ext and E ext

  1. Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor

    Science.gov (United States)

    Feijoo, Pedro C.; Pasadas, Francisco; Iglesias, José M.; Martín, María J.; Rengel, Raúl; Li, Changfeng; Kim, Wonjae; Riikonen, Juha; Lipsanen, Harri; Jiménez, David

    2017-12-01

    The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field-effect transistors (GFETs) to get a competitive radio-frequency (RF) performance. Carrier mobility and saturation velocity were obtained from an ensemble Monte Carlo simulator that accounted for the relevant scattering mechanisms (intrinsic phonons, scattering with impurities and defects, etc). This information is fed into a self-consistent simulator, which solves the drift-diffusion equation coupled with the two-dimensional Poisson’s equation to take full account of short channel effects. Simulated GFET characteristics were benchmarked against experimental data from our fabricated devices. Our simulations show that scalability is supposed to bring to RF performance an improvement that is, however, highly limited by instability. Despite the possibility of a lower performance, a careful choice of the bias point can avoid instability. Nevertheless, maximum oscillation frequencies are still achievable in the THz region for channel lengths of a few hundreds of nanometers.

  2. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States); Zheng, Jian-Guo [Irvine Materials Research Institute, University of California, Irvine, California 92697-2800 (United States)

    2016-07-25

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  3. A hybrid MBE-based growth method for large-area synthesis of stacked hexagonal boron nitride/graphene heterostructures

    Science.gov (United States)

    Wofford, Joseph M.; Nakhaie, Siamak; Krause, Thilo; Liu, Xianjie; Ramsteiner, Manfred; Hanke, Michael; Riechert, Henning; J. Lopes, J. Marcelo

    2017-01-01

    Van der Waals heterostructures combining hexagonal boron nitride (h-BN) and graphene offer many potential advantages, but remain difficult to produce as continuous films over large areas. In particular, the growth of h-BN on graphene has proven to be challenging due to the inertness of the graphene surface. Here we exploit a scalable molecular beam epitaxy based method to allow both the h-BN and graphene to form in a stacked heterostructure in the favorable growth environment provided by a Ni(111) substrate. This involves first saturating a Ni film on MgO(111) with C, growing h-BN on the exposed metal surface, and precipitating the C back to the h-BN/Ni interface to form graphene. The resulting laterally continuous heterostructure is composed of a top layer of few-layer thick h-BN on an intermediate few-layer thick graphene, lying on top of Ni/MgO(111). Examinations by synchrotron-based grazing incidence diffraction, X-ray photoemission spectroscopy, and UV-Raman spectroscopy reveal that while the h-BN is relaxed, the lattice constant of graphene is significantly reduced, likely due to nitrogen doping. These results illustrate a different pathway for the production of h-BN/graphene heterostructures, and open a new perspective for the large-area preparation of heterosystems combining graphene and other 2D or 3D materials. PMID:28240323

  4. Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride.

    Science.gov (United States)

    Choi, David; Poudel, Nirakar; Park, Saungeun; Akinwande, Deji; Cronin, Stephen B; Watanabe, Kenji; Taniguchi, Takashi; Yao, Zhen; Shi, Li

    2018-03-22

    Scanning thermal microscopy measurements reveal a significant thermal benefit of including a high thermal conductivity hexagonal boron nitride (h-BN) heat-spreading layer between graphene and either a SiO 2 /Si substrate or a 100 μm thick Corning flexible Willow glass (WG) substrate. At the same power density, an 80 nm thick h-BN layer on the silicon substrate can yield a factor of 2.2 reduction of the hot spot temperature, whereas a 35 nm thick h-BN layer on the WG substrate is sufficient to obtain a factor of 4.1 reduction. The larger effect of the h-BN heat spreader on WG than on SiO 2 /Si is attributed to a smaller effective heat transfer coefficient per unit area for three-dimensional heat conduction into the thick, low-thermal conductivity WG substrate than for one-dimensional heat conduction through the thin oxide layer on silicon. Consequently, the h-BN lateral heat-spreading length is much larger on WG than on SiO 2 /Si, resulting in a larger degree of temperature reduction.

  5. Self-Sensitization and Photo-Polymerization of Diacetylene Molecules Self-Assembled on a Hexagonal-Boron Nitride Nanosheet

    Directory of Open Access Journals (Sweden)

    Elisseos Verveniotis

    2018-02-01

    Full Text Available Long poly-diacetylene chains are excellent candidates for planar, on-surface synthesized molecular electronic wires. Since hexagonal-Boron Nitride (h-BN was identified as the best available atomically flat insulator for the deposition of poly-diacetylene precursors, we demonstrate the polymerization patterns and rate on it under UV-light irradiation, with subsequent polymer identification by atomic force microscopy. The results on h-BN indicate self-sensitization which yields blocks comprised of several polymers, unlike on the well-studied graphite/diacetylene system, where the polymers are always isolated. In addition, the photo-polymerization proceeds at least 170 times faster on h-BN, where it also results in longer polymers. Both effects are explained by the h-BN bandgap, which is larger than the diacetylene electronic excitation energy, thus allowing the transfer of excess energy absorbed by polymerized wires to adjacent monomers, triggering their polymerization. This work sets the stage for conductance measurements of single molecular poly-diacetylene wires on h-BN.

  6. Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor.

    Science.gov (United States)

    Feijoo, Pedro C; Pasadas, Francisco; Iglesias, José M; Martín, María J; Rengel, Raúl; Li, Changfeng; Kim, Wonjae; Riikonen, Juha; Lipsanen, Harri; Jiménez, David

    2017-12-01

    The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field-effect transistors (GFETs) to get a competitive radio-frequency (RF) performance. Carrier mobility and saturation velocity were obtained from an ensemble Monte Carlo simulator that accounted for the relevant scattering mechanisms (intrinsic phonons, scattering with impurities and defects, etc). This information is fed into a self-consistent simulator, which solves the drift-diffusion equation coupled with the two-dimensional Poisson's equation to take full account of short channel effects. Simulated GFET characteristics were benchmarked against experimental data from our fabricated devices. Our simulations show that scalability is supposed to bring to RF performance an improvement that is, however, highly limited by instability. Despite the possibility of a lower performance, a careful choice of the bias point can avoid instability. Nevertheless, maximum oscillation frequencies are still achievable in the THz region for channel lengths of a few hundreds of nanometers.

  7. Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene

    Science.gov (United States)

    Rigosi, Albert F.; Hill, Heather M.; Glavin, Nicholas R.; Pookpanratana, Sujitra J.; Yang, Yanfei; Boosalis, Alexander G.; Hu, Jiuning; Rice, Anthony; Allerman, Andrew A.; Nguyen, Nhan V.; Hacker, Christina A.; Elmquist, Randolph E.; Hight Walker, Angela R.; Newell, David B.

    2018-01-01

    Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a single crystal over millimeter-scale areas and consequently, the large scale single crystal can be utilized as a template for growth of other materials. In this work, we present the use of EG as a template to form millimeter-scale amorphous and hexagonal boron nitride (a-BN and h-BN) films. The a-BN is formed with pulsed laser deposition and the h-BN is grown with triethylboron (TEB) and NH3 precursors, making it the first metal organic chemical vapor deposition (MOCVD) process of this growth type performed on epitaxial graphene. A variety of optical and non-optical characterization methods are used to determine the optical absorption and dielectric functions of the EG, a-BN, and h-BN within the energy range of 1 eV–8.5 eV. Furthermore, we report the first ellipsometric observation of high-energy resonant excitons in EG from the 4H polytype of SiC and an analysis on the interactions within the EG and h-BN heterostructure.

  8. Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices

    Science.gov (United States)

    Pan, Chengbin; Miranda, Enrique; Villena, Marco A.; Xiao, Na; Jing, Xu; Xie, Xiaoming; Wu, Tianru; Hui, Fei; Shi, Yuanyuan; Lanza, Mario

    2017-06-01

    Despite the enormous interest raised by graphene and related materials, recent global concern about their real usefulness in industry has raised, as there is a preoccupying lack of 2D materials based electronic devices in the market. Moreover, analytical tools capable of describing and predicting the behavior of the devices (which are necessary before facing mass production) are very scarce. In this work we synthesize a resistive random access memory (RRAM) using graphene/hexagonal-boron-nitride/graphene (G/h-BN/G) van der Waals structures, and we develop a compact model that accurately describes its functioning. The devices were fabricated using scalable methods (i.e. CVD for material growth and shadow mask for electrode patterning), and they show reproducible resistive switching (RS). The measured characteristics during the forming, set and reset processes were fitted using the model developed. The model is based on the nonlinear Landauer approach for mesoscopic conductors, in this case atomic-sized filaments formed within the 2D materials system. Besides providing excellent overall fitting results (which have been corroborated in log-log, log-linear and linear-linear plots), the model is able to explain the dispersion of the data obtained from cycle-to-cycle in terms of the particular features of the filamentary paths, mainly their confinement potential barrier height.

  9. Defect states in hexagonal boron nitride: Assignments of observed properties and prediction of properties relevant to quantum computation

    Science.gov (United States)

    Sajid, A.; Reimers, Jeffrey R.; Ford, Michael J.

    2018-02-01

    Key properties of nine possible defect sites in hexagonal boron nitride (h-BN), VN,VN -1,CN,VNO2 B,VNNB,VNCB,VBCN,VBCNS iN , and VNCBS iB , are predicted using density-functional theory and are corrected by applying results from high-level ab initio calculations. Observed h-BN electron-paramagnetic resonance signals at 22.4, 20.83, and 352.70 MHz are assigned to VN,CN, and VNO2 B , respectively, while the observed photoemission at 1.95 eV is assigned to VNCB . Detailed consideration of the available excited states, allowed spin-orbit couplings, zero-field splitting, and optical transitions is made for the two related defects VNCB and VBCN . VNCB is proposed for realizing long-lived quantum memory in h-BN. VBCN is predicted to have a triplet ground state, implying that spin initialization by optical means is feasible and suitable optical excitations are identified, making this defect of interest for possible quantum-qubit operations.

  10. Tuning the electronic and optical properties of hexagonal boron-nitride nanosheet by inserting graphene quantum dots

    Science.gov (United States)

    Ding, Yi-Min; Shi, Jun-Jie; Zhang, Min; Wu, Meng; Wang, Hui; Cen, Yu-Lang; Pan, Shu-Hang; Guo, Wen-Hui

    2018-02-01

    It is difficult to integrate two-dimensional (2D) graphene and hexagonal boron-nitride (h-BN) in optoelectronic nanodevices, due to the semi-metal and insulator characteristic of graphene and h-BN, respectively. Using the state-of-the-art first-principles calculations based on many-body perturbation theory, we investigate the electronic and optical properties of h-BN nanosheet embedded with graphene dots. We find that C atom impurities doped in h-BN nanosheet tend to phase-separate into graphene quantum dots (QD), and BNC hybrid structure, i.e. a graphene dot within a h-BN background, can be formed. The band gaps of BNC hybrid structures have an inverse relationship with the size of graphene dot. The calculated optical band gaps for BNC structures vary from 4.71 eV to 3.77 eV, which are much smaller than that of h-BN nanosheet. Furthermore, the valence band maximum is located in C atoms bonded to B atoms and conduction band minimum is located in C atoms bonded to N atoms, which means the electron and hole wave functions are closely distributed around the graphene dot. The bound excitons, localized around the graphene dot, determine the optical spectra of the BNC hybrid structures, in which the exciton binding energies decrease with increase in the size of graphene dots. Our results provide an important theoretical basis for the design and development of BNC-based optoelectronic nanodevices.

  11. Effect of 10B isotope and vacancy defects on the phonon modes of two-dimensional hexagonal boron nitride

    Science.gov (United States)

    Sherajul Islam, Md.; Anindya, Khalid N.; Bhuiyan, Ashraful G.; Tanaka, Satoru; Makino, Takayuki; Hashimoto, Akihiro

    2018-02-01

    We report the details of the effects of the 10B isotope and those of B and N vacancies combined with the isotope on the phonon modes of two-dimensional hexagonal boron nitride (h-BN). The phonon density of states and localization problems are solved using the forced vibrational method, which is suitable for an intricate and disordered system. We observe an upward shift of Raman-active E2g-mode optical phonons (32 cm‑1) for a 100% 10B isotope, which matches well with the experiment and simple harmonic oscillator model. However, a downward shift of E2g-mode phonons is observed for B or N vacancies and the combination of the isotope and vacancy-type disordered BN. Strong localized eigenmodes are found for all types of defects, and a typical localization length is on the order of ∼7 nm for naturally occurring BN samples. These results are very important for understanding the heat dissipation and electron transport properties of BN-based nanoelectronics.

  12. Preparation of high-content hexagonal boron nitride composite film and characterization of atomic oxygen erosion resistance

    Science.gov (United States)

    Zhang, Yu; Li, Min; Gu, Yizhuo; Wang, Shaokai; Zhang, Zuoguang

    2017-04-01

    Space aircrafts circling in low earth orbit are suffered from highly reactive atomic oxygen (AO). To shield AO, a flexible thin film with 80 wt.% hexagonal boron nitride (h-BN) and h-BN/epoxy film were fabricated through vacuum filtration and adding nanofibrillated cellulose fibers. H-BN nanosheets were hydroxylated for enhancing interaction in the films. Mass loss and erosion yield at accumulated AO fluence about 3.04 × 1020 atoms/cm2 were adopted to evaluate the AO resistance properties of the films. A carpet-like rough surface, chemical oxidations and change in crystal structure of h-BN were found after AO treatment, and the degrading mechanism was proposed. The mass loss and erosion yield under AO attack were compared between h-BN film and h-BN/epoxy film, and the comparison was also done for various types of shielding AO materials. Excellent AO resistance property of h-BN film is shown, and the reasons are analyzed.

  13. Chemisorption of Hydroxide on 2D Materials from DFT Calculations: Graphene versus Hexagonal Boron Nitride.

    Science.gov (United States)

    Grosjean, Benoit; Pean, Clarisse; Siria, Alessandro; Bocquet, Lydéric; Vuilleumier, Rodolphe; Bocquet, Marie-Laure

    2016-11-17

    Recent nanofluidic experiments revealed strongly different surface charge measurements for boron-nitride (BN) and graphitic nanotubes when in contact with saline and alkaline water (Nature 2013, 494, 455-458; Phys. Rev. Lett. 2016, 116, 154501). These observations contrast with the similar reactivity of a graphene layer and its BN counterpart, using density functional theory (DFT) framework, for intact and dissociative adsorption of gaseous water molecules. Here we investigate, by DFT in implicit water, single and multiple adsorption of anionic hydroxide on single layers. A differential adsorption strength is found in vacuum for the first ionic adsorption on the two materials-chemisorbed on BN while physisorbed on graphene. The effect of implicit solvation reduces all adsorption values, resulting in a favorable (nonfavorable) adsorption on BN (graphene). We also calculate a pK a ≃ 6 for BN in water, in good agreement with experiments. Comparatively, the unfavorable results for graphene in water echo the weaker surface charge measurements but point to an alternative scenario.

  14. Pt atoms stabilized on hexagonal boron nitride as efficient single-atom catalysts for CO oxidation: A first-principles investigation

    KAUST Repository

    Liu, Xin

    2015-01-01

    Taking CO oxidation as a probe, we investigated the electronic structure and reactivity of Pt atoms stabilized by vacancy defects on hexagonal boron nitride (h-BN) by first-principles-based calculations. As a joint effect of the high reactivity of both a single Pt atom and a boron vacancy defect (PtBV), the Pt-N interaction is -4.40 eV and is already strong enough to prohibit the diffusion and aggregation of the stabilized Pt atom. Facilitated by the upshifted Pt-d states originated from the Pt-N interaction, the barriers for CO oxidation through the Langmuir-Hinshelwood mechanism for formation and dissociation of peroxide-like intermediate and the regeneration are as low as 0.38, 0.10 and 0.04 eV, respectively, suggesting the superiority of PtBV as a catalyst for low temperature CO oxidation.

  15. 2D Hexagonal Boron Nitride (2D-hBN) Explored for the Electrochemical Sensing of Dopamine.

    Science.gov (United States)

    Khan, Aamar F; Brownson, Dale A C; Randviir, Edward P; Smith, Graham C; Banks, Craig E

    2016-10-04

    Crystalline 2D hexagonal boron nitride (2D-hBN) nanosheets are explored as a potential electrocatalyst toward the electroanalytical sensing of dopamine (DA). The 2D-hBN nanosheets are electrically wired via a drop-casting modification process onto a range of commercially available carbon supporting electrodes, including glassy carbon (GC), boron-doped diamond (BDD), and screen-printed graphitic electrodes (SPEs). 2D-hBN has not previously been explored toward the electrochemical detection/electrochemical sensing of DA. We critically evaluate the potential electrocatalytic performance of 2D-hBN modified electrodes, the effect of supporting carbon electrode platforms, and the effect of "mass coverage" (which is commonly neglected in the 2D material literature) toward the detection of DA. The response of 2D-hBN modified electrodes is found to be largely dependent upon the interaction between 2D-hBN and the underlying supporting electrode material. For example, in the case of SPEs, modification with 2D-hBN (324 ng) improves the electrochemical response, decreasing the electrochemical oxidation potential of DA by ∼90 mV compared to an unmodified SPE. Conversely, modification of a GC electrode with 2D-hBN (324 ng) resulted in an increased oxidation potential of DA by ∼80 mV when compared to the unmodified electrode. We explore the underlying mechanisms of the aforementioned examples and infer that electrode surface interactions and roughness factors are critical considerations. 2D-hBN is utilized toward the sensing of DA in the presence of the common interferents ascorbic acid (AA) and uric acid (UA). 2D-hBN is found to be an effective electrocatalyst in the simultaneous detection of DA and UA at both pH 5.0 and 7.4. The peak separations/resolution between DA and UA increases by ∼70 and 50 mV (at pH 5.0 and 7.4, respectively, when utilizing 108 ng of 2D-hBN) compared to unmodified SPEs, with a particularly favorable response evident in pH 5.0, giving rise to a

  16. Understanding and Calibrating Density-Functional-Theory Calculations Describing the Energy and Spectroscopy of Defect Sites in Hexagonal Boron Nitride.

    Science.gov (United States)

    Reimers, Jeffrey R; Sajid, A; Kobayashi, Rika; Ford, Michael J

    2018-03-13

    Defect states in 2-D materials present many possible uses but both experimental and computational characterization of their spectroscopic properties is difficult. We provide and compare results from 13 DFT and ab initio computational methods for up to 25 excited states of a paradigm system, the V N C B defect in hexagonal boron nitride (h-BN). Studied include: (i) potentially catastrophic effects for computational methods arising from the multireference nature of the closed-shell and open-shell states of the defect, which intrinsically involves broken chemical bonds, (ii) differing results from DFT and time-dependent DFT (TDDFT) calculations, (iii) comparison of cluster models to periodic-slab models of the defect, (iv) the starkly differing effects of nuclear relaxation on the various electronic states that control the widths of photoabsorption and photoemission spectra as broken bonds try to heal, (v) the effect of zero-point energy and entropy on free-energy differences, (vi) defect-localized and conduction/valence-band transition natures, and (vii) strategies needed to ensure that the lowest-energy state of a defect can be computationally identified. Averaged state-energy differences of 0.3 eV are found between CCSD(T) and MRCI energies, with thermal effects on free energies sometimes also being of this order. However, DFT-based methods can perform very poorly. Simple generalized-gradient functionals like PBE fail at the most basic level and should never be applied to defect states. Hybrid functionals like HSE06 work very well for excitations within the triplet manifold of the defect, with an accuracy equivalent to or perhaps exceeding the accuracy of the ab initio methods used. However, HSE06 underestimates triplet-state energies by on average of 0.7 eV compared to closed-shell singlet states, while open-shell singlet states are predicted to be too low in energy by 1.0 eV. This leads to misassignment of the ground state of the V N C B defect. Long

  17. Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method

    Science.gov (United States)

    Hoffman, Tim

    Hexagonal boron nitride (hBN) is a wide bandgap III-V semiconductor that has seen new interest due to the development of other III-V LED devices and the advent of graphene and other 2-D materials. For device applications, high quality, low defect density materials are needed. Several applications for hBN crystals are being investigated, including as a neutron detector and interference-less infrared-absorbing material. Isotopically enriched crystals were utilized for enhanced propagation of phonon modes. These applications exploit the unique physical, electronic and nanophotonics applications for bulk hBN crystals. In this study, bulk hBN crystals were grown by the flux method using a molten Ni-Cr solvent at high temperatures (1500°C) and atmospheric pressures. The effects of growth parameters, source materials, and gas environment on the crystals size, morphology and purity were established and controlled, and the reliability of the process was greatly improved. Single-crystal domains exceeding 1mm in width and 200microm in thickness were produced and transferred to handle substrates for analysis. Grain size dependence with respect to dwell temperature, cooling rate and cooling temperature were analyzed and modeled using response surface morphology. Most significantly, crystal grain width was predicted to increase linearly with dwell temperature, with single-crystal domains exceeding 2mm in at 1700°C. Isotopically enriched 10B and 11B hBN crystal were produced using a Ni-Cr-B flux method, and their properties investigated. 10B concentration was evaluated using SIMS and correlated to the shift in the Raman peak of the E2g mode. Crystals with enrichment of 99% 10B and >99% 11B were achieved, with corresponding Raman shift peaks at 1392.0 cm-1 and 1356.6 cm-1, respectively. Peak FWHM also decreased as isotopic enrichment approached 100%, with widths as low as 3.5 cm-1 achieved, compared to 8.0 cm-1 for natural abundance samples. Defect selective etching was

  18. Study of the boron levels in serum after implantation of different ratios nano-hexagonal boron nitride–hydroxy apatite in rat femurs

    Energy Technology Data Exchange (ETDEWEB)

    Atila, Alptug, E-mail: alptugatila@yahoo.com [Department of Analytical Chemistry, Faculty of Pharmacy, Ataturk University, Erzurum 25240 (Turkey); Halici, Zekai; Cadirci, Elif [Department of Pharmacology, Faculty of Medicine, Ataturk University, Erzurum 25240 (Turkey); Karakus, Emre [Department of Pharmacology and Toxicology, School of Veterinary Medicine, Ataturk University, Erzurum 25240 (Turkey); Palabiyik, Saziye Sezin [Department of Pharmaceutical Toxicology, Faculty of Pharmacy, Ataturk University, Erzurum 25240 (Turkey); Ay, Nuran [Department of Material Science and Engineering, Faculty of Engineering, Anadolu University, Eskisehir 26555 (Turkey); Bakan, Feray [Sabancı University Nanotechnology Research and Application Center (SUNUM), Istanbul 34956 (Turkey); Yilmaz, Sahin [Department of Genetics and Bioengineering, Faculty of Engineering and Architecture, Yeditepe University, Istanbul 34755 (Turkey)

    2016-01-01

    ABSTRACT: Boron and its derivatives are effective in bone recovery and osteointegration. However, increasing the boron levels in body liquids may cause toxicity. The aim of our study is to investigate serum boron levels using ICP-MS after implantation of different ratios of nano-hBN–HA composites in rat femurs. All rats were (n = 126) divided into five experimental groups (n = 24) and one healthy group (6 rats); healthy (Group1), femoral defect + %100HA (Group2), femoral defect + %2.5hBN + %97.5HA (Group3), femoral defect + %5hBN + %95HA (Group4), femoral defect + %10hBN + %90 HA (Group5), femoral defect + %100hBN (Group6). The femoral defect was created in the distal femur (3 mm drill-bit). Each implant group was divided into four different groups (n = 24) also 6 rats sacrificed for each groups in one week intervals during four weeks. In our results; at 1, 2, 3, and 4 weeks after implantation near bone tissue, serum levels of boron were evaluated using ICP-MS. We demonstrated that neither short-term nor long-term implantation of hBN–HA composite resulted in statistically increased serum boron levels in experimental groups compared to healthy group. In conclusion, this study investigated the implant material produced form hBN–HA for the first time. Our data suggest that hBN is a new promising target for biomaterial and implant bioengineers. - Highlights: • Nano-hBN–HA composites are new targets for biomaterial and implant bioengineers. • Serum boron levels were researched after implantation of nano-hBN–HA composites. • Implantation of hBN–HA composite did not result in increased serum boron levels. • The use of boron in composite form with HA did not change the stability of the implant.

  19. Cubic and hexagonal boron-nitride (c-BN/h-BN) thin films deposited in situ by r.f. magnetron sputtering

    Science.gov (United States)

    Caicedo, J. M.; Bejarano, G.; Zambrano, G.; Baca, E.; Morán, O.; Prieto, P.

    2005-07-01

    Cubic boron-nitride (c-BN)/hexagonal boron nitride (h-BN) thin films were grown in situ on (100) oriented silicon substrates by r.f. (13.56 MHz) magnetron sputtering technique. In order to obtain the highest fraction of the c-BN phase, a negative d.c bias voltage, varying from 0 to -200 V was applied to the substrate during deposition. Another set of boron nitride thin films was deposited in situ on (100) oriented silicon substrates under r.f. bias voltage. The substrate holder was biased from 0 to -350 V by connecting such to an auxiliary r.f. generator (operated at 13.56 MHz). Films were characterized by Fourier Transformed Infrared Spectroscopy (FTIR) and Atomic Force Microscope (AFM). Well-defined peaks at 787 cm-1, 1100 cm-1 and 1387 cm-1, corresponding to the 2Au (out-plane bending of B-N-B bond) h-BN vibration mode, the F2 (stretching) c-BN Transversal Optical (TO) mode and the E1u (in-plane stretching of B-N bond) vibration mode of the h-BN, respectively, were observed in the FTIR spectra. A maximal fraction of the c-BN phase close to 85% was obtained under a bias voltage of -150 V at substrate temperature of 300 °C and a total pressure of 4 × 10-2 mbar.

  20. Boron nitride composites

    Science.gov (United States)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2017-02-21

    According to one embodiment, a composite product includes: a matrix material including hexagonal boron nitride and one or more borate binders; and a plurality of cubic boron nitride particles dispersed in the matrix material. According to another embodiment, a composite product includes: a matrix material including hexagonal boron nitride and amorphous boron nitride; and a plurality of cubic boron nitride particles dispersed in the matrix material.

  1. Study of the boron levels in serum after implantation of different ratios nano-hexagonal boron nitride-hydroxy apatite in rat femurs.

    Science.gov (United States)

    Atila, Alptug; Halici, Zekai; Cadirci, Elif; Karakus, Emre; Palabiyik, Saziye Sezin; Ay, Nuran; Bakan, Feray; Yilmaz, Sahin

    2016-01-01

    Boron and its derivatives are effective in bone recovery and osteointegration. However, increasing the boron levels in body liquids may cause toxicity. The aim of our study is to investigate serum boron levels using ICP-MS after implantation of different ratios of nano-hBN-HA composites in rat femurs. All rats were (n=126) divided into five experimental groups (n=24) and one healthy group (6 rats); healthy (Group1), femoral defect + %100 HA (Group2), femoral defect + %2.5 hBN + %97.5 HA (Group3), femoral defect + %5 hBN + %95 HA (Group4), femoral defect + %10 hBN + %90 HA (Group5), femoral defect + %100 hBN (Group6). The femoral defect was created in the distal femur (3mm drill-bit). Each implant group was divided into four different groups (n=24) also 6 rats sacrificed for each groups in one week intervals during four weeks. In our results; at 1, 2, 3, and 4 weeks after implantation near bone tissue, serum levels of boron were evaluated using ICP-MS. We demonstrated that neither short-term nor long-term implantation of hBN-HA composite resulted in statistically increased serum boron levels in experimental groups compared to healthy group. In conclusion, this study investigated the implant material produced form hBN-HA for the first time. Our data suggest that hBN is a new promising target for biomaterial and implant bioengineers. Copyright © 2015 Elsevier B.V. All rights reserved.

  2. Island shape, size and interface dependency on electronic and magnetic properties of graphene hexagonal-boron nitride (h-BN) in-plane hybrids

    Science.gov (United States)

    Akman, Nurten; Özdoğan, Cem

    2018-04-01

    We systematically investigate the energetics of ion implantation, stability, electronic, and magnetic properties of graphene/hexagonal boron nitrate (h-BN) in-plane hybrids through first principle calculations. We consider hexagonal and triangular islands in supercells of graphene and h-BN layouts. In the case of triangular islands, both phases mix with each other by either solely Csbnd N or Csbnd B bonds. We also patterned triangles with predominating Csbnd N or Csbnd B bonds at their interfaces. The energetics of island implantation is discussed in detail. Formation energies point out that the island implantation could be even exothermic for all hybrids studied in this work. Effects of size and shape of the island, and dominating bonding sort at the island-layout interfaces on the stability, band gap, and magnetic properties of hybrids are studied particularly. The hybrids become more stable with increasing island size. Regardless of the layout, hybrids with hexagonal islands are all non-magnetic and semiconducting. One can thus open a band gap in the semimetallic graphene by mixing it with the h-BN phase. In general, hybrids containing graphene triangles show metallic property and exhibit considerable amount of magnetic moments for possible localized spin utilizations. Total magnetic moment of hybrids with both graphene and h-BN layouts increases with growing triangle island as well. The spin densities of magnetic hybrids are derived from interfaces of the islands and diminish towards their center. We suggest that the increase in stability and magnetic moment depend on the number of atoms at the interfaces rather than the island size.

  3. Cubic and hexagonal boron-nitride (c-BN/h-BN) thin films deposited in situ by r.f. magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Caicedo, J.M.; Zambrano, G.; Baca, E.; Moran, O.; Prieto, P. [Departamento de Fisica, Universidad del Valle, A.A. 25360 Cali (Colombia); Bejarano, G. [Laboratorio de Recubrimientos Duros, CDT-ASTIN SENA, Cali (Colombia)

    2005-07-01

    Cubic boron-nitride (c-BN)/hexagonal boron nitride (h-BN) thin films were grown in situ on (100) oriented silicon substrates by r.f. (13.56 MHz) magnetron sputtering technique. In order to obtain the highest fraction of the c-BN phase, a negative d.c bias voltage, varying from 0 to -200 V was applied to the substrate during deposition. Another set of boron nitride thin films was deposited in situ on (100) oriented silicon substrates under r.f. bias voltage. The substrate holder was biased from 0 to -350 V by connecting such to an auxiliary r.f. generator (operated at 13.56 MHz). Films were characterized by Fourier Transformed Infrared Spectroscopy (FTIR) and Atomic Force Microscope (AFM). Well-defined peaks at 787 cm{sup -1}, 1100 cm{sup -1} and 1387 cm{sup -1}, corresponding to the 2{sub Au} (out-plane bending of B-N-B bond) h-BN vibration mode, the F2 (stretching) c-BN Transversal Optical (TO) mode and the E{sub 1u} (in-plane stretching of B-N bond) vibration mode of the h-BN, respectively, were observed in the FTIR spectra. A maximal fraction of the c-BN phase close to 85% was obtained under a bias voltage of -150 V at substrate temperature of 300 C and a total pressure of 4 x 10{sup -2} mbar. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. An ab initio investigation of phosphorene/hexagonal boron nitride heterostructures with defects for high performance photovoltaic applications

    Science.gov (United States)

    Wang, Ci; Sun, Jie; Zhang, Baitao; Zhang, Jian; Tao, Xutang

    2017-11-01

    First principles studies are performed to discover the influences of different intercalated atoms and vacancies to the phosphorene/h-BN heterostructure. The metal impurities act as electron donors. On alkali metal intercalation the heterojunction was changed into metallic compounds, while 3d transition- metals (TMs) offer shallow localized magnetic spin peaks contributing to electronic scattering. The most stable sites for four considered nonmetal atoms are different, and nonmetal layers are more stable than metal systems for their higher binding energies. The intrinsic vacancy defect boron monovacancy in h-BN sheet can magnetize the system, whereas the other vacancies and triangular vacancies act as nonmagnetic defects. It is revealed that atomic absorptions or vacancies can be well used to modulate electronic band structures of heterojunction over a wide range for high performance photovoltaic application, and to enhance the interlayer coupling concerning optimizing the electron scattering.

  5. Hexagonal boron nitride and graphene in-plane heterostructures: An experimentally feasible approach to charge-induced switchable CO{sub 2} capture

    Energy Technology Data Exchange (ETDEWEB)

    Tan, Xin; Tahini, Hassan A.; Smith, Sean C., E-mail: sean.smith@unsw.edu.au

    2016-10-20

    Hexagonal boron nitride (h-BN) has been proposed as a sorbent material for charge-induced switchable CO{sub 2} capture. However, h-BN is a wide-gap semiconductor, hindering injection of the requisite charge. Here, we employ first-principle calculations to support the proposal that in-plane h-BN/graphene (P-BN/G) heterostructures, consisting of alternating strips of h-BN and graphene, may provide an experimentally feasible material platform for voltage-induced charging of h-BN strips to realize switchable CO{sub 2} capture. Our results show that a significant amount of injected negative charges are distributed onto h-BN strips of P-BN/G, such that CO{sub 2} capture/release can be simply controlled by switching on/off the charge states of P-BN/G system. At saturation CO{sub 2} capture coverage, the negatively charged P-BN/G heterostructures achieve CO{sub 2} capture capacities up to 2.27 × 10{sup 14} cm{sup −2}, which is twice that which can be achieved on stacked h-BN/graphene (S-BN/G) nanosheets.

  6. Theoretical Analysis of Thermal Transport in Graphene Supported on Hexagonal Boron Nitride: The Importance of Strong Adhesion Due to π -Bond Polarization

    Science.gov (United States)

    Pak, Alexander J.; Hwang, Gyeong S.

    2016-09-01

    One important attribute of graphene that makes it attractive for high-performance electronics is its inherently large thermal conductivity (κ ) for the purposes of thermal management. Using a combined density-functional theory and classical molecular-dynamics approach, we predict that the κ of graphene supported on hexagonal boron nitride (h -BN) can be as large as 90% of the κ of suspended graphene, in contrast to the significant suppression of κ (more than 70% reduction) on amorphous silica. Interestingly, we find that this enhanced thermal transport is largely attributed to increased lifetimes of the in-plane acoustic phonon modes, which is a notable contrast from the dominant contribution of out-of-plane acoustic modes in suspended graphene. This behavior is possible due to the charge polarization throughout graphene that induces strong interlayer adhesion between graphene and h -BN. These findings highlight the potential benefit of layered dielectric substrates such as h -BN for graphene-based thermal management, in addition to their electronic advantages. Furthermore, our study brings attention to the importance of understanding the interlayer interactions of graphene with layered dielectric materials which may offer an alternative technological platform for substrates in electronics.

  7. Exceptionally large migration length of carbon and topographically-facilitated self-limiting molecular beam epitaxial growth of graphene on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Plaut, Annette S.; Wurstbauer, Ulrich; Wang, Sheng; Levy, Antonio L.; Fernandes dos Santos, Lara; Wang, Lei; Pfeiffer, Loren N.; Watanabe, Kenji; Taniguchi, Takashi; Dean, Cory R.; Hone, James; Pinczuk, Aron; Garcia, Jorge M.

    2017-04-01

    We demonstrate growth of single-layer graphene (SLG) on hexagonal boron nitride (h-BN) by molecular beam epitaxy (MBE), only limited in area by the finite size of the h-BN flakes. Using atomic force microscopy and micro-Raman spectroscopy, we show that for growth over a wide range of temperatures (500 °C – 1000 °C) the deposited carbon atoms spill off the edge of the h-BN flakes. We attribute this spillage to the very high mobility of the carbon atoms on the BN basal plane, consistent with van der Waals MBE. The h-BN flakes vary in size from 30 μm to 100 μm, thus demonstrating that the migration length of carbon atoms on h-BN is greater than 100 μm. When sufficient carbon is supplied to compensate for this loss, which is largely due to this fast migration of the carbon atoms to and off the edges of the h-BN flake, we find that the best growth temperature for MBE SLG on h-BN is ~950 °C. Self-limiting graphene growth appears to be facilitated by topographic h-BN surface features: We have thereby grown MBE self-limited SLG on an h-BN ridge. This opens up future avenues for precisely tailored fabrication of nano- and hetero-structures on pre-patterned h-BN surfaces for device applications.

  8. Measurements of the nuclear spin-spin relaxation times for commensurate {sup 3}He-Ne films adsorbed on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Parks, C; Sullivan, N S [Department of Physics, University of Florida, Gainesville, FL 32611 (United States); Stachowiak, P [Institute of Low Temperature and Structure Research, Polish Academy of Sciences, PO Box 1410, 50-950 Wroclaw (Poland)], E-mail: Sullivan@phys.ufl.edu

    2009-02-01

    Measurements of the {sup 3}He nuclear spin-spin relaxation time, T{sub 2}, have been carried out for commensurate layers of {sup 3}He-Ne mixtures adsorbed on hexagonal boron nitride for temperatures 0.2< T <10 K. A temperature independent relaxation is observed at low temperatures and is interpreted in terms of the effective exchange frequencies for {sup 3}He particle exchange on the surface. The results show a strong dependence on the fraction of neon in the adsorbed layer. This variation is discussed in terms of a multiple spin exchange model for {sup 3}He in a monolayer. The contributions to T{sub 2} from different components of the exchange, 2-spin exchange (J{sub 2}), 3-spin exchange (J{sub 3}), 4-spin exchange (J{sub 4}) and higher exchange permutations depend on the {sup 3}He coverage and thus permit the separation of the amplitudes of the different exchange rates, and in particular allow one to deduce the relative strengths of 2-atom and 3-atom exchange where other methods are sensitive only to the effective two-particle term J{sub eff} = J{sub 2} - 2J{sub 3}.

  9. Methods of forming boron nitride

    Science.gov (United States)

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L

    2015-03-03

    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  10. Edge and substrate-induced bandgap in zigzag graphene nanoribbons on the hexagonal nitride boron 8-ZGNR/h-BN(0001

    Directory of Open Access Journals (Sweden)

    V. V. Ilyasov

    2013-09-01

    Full Text Available The results of DFT (GGA-PBEsol and DFT(PBE-D2 study of the band structure of zigzag graphene nanoribbons on hexagonal nitride boron 8-ZGNR/h-BN(0001 are presented, suitable as potential base for new materials for spintronics. It offers a study of regularities in the changes of the valence band electron structure and the induction of the energy gap in the series 8-ZGNR → 8-ZGNR/h-BN(0001 → graphene/h-BN(0001. The peculiarities of the spin state at the Fermi level, the roles of the edge effect and the effect of substrate in formation of the band gap in 8-ZGNR/h-BN(0001 system are discussed. Our calculations shown that vdW-correction plays an important role in the adsorption of GNR on h-BN and results in reduction of the interplanar distances in equilibrium systems ZGNRs/h-BN(0001. As a result of the structural changes we have obtained new values of the energy gap in the 8-ZGNR-AF and 8-ZGNR-AF/h-BN(0001 systems. The paper demonstrates appearance of 600 meV energy gap in the 8-ZGNR/h-BN(0001 interface. The contributions of nanoribbon edges and the substrate in formation of the gap have been differentiated for the first time. The estimations of local magnetic moments on carbon atoms are made. Shown that in case of ferromagnetic ordering substrate presense causes insignificant splitting of the bands. The splitting reached only (14-28 meV. Since the electronic states of a suspended GNR in point (k=π are degenerate near the Fermi level, we can assume that the above splitting in 8-ZGNR/h-BN(0001 is only determined by the contribution of the h-BN(0001 substrate.

  11. Effect of hexagonal boron nitride and calcined petroleum coke on friction and wear behavior of phenolic resin-based friction composites

    International Nuclear Information System (INIS)

    Yi Gewen; Yan Fengyuan

    2006-01-01

    Calcined petroleum coke (CPC) and hexagonal boron nitride (h-BN) were used as the friction modifiers to improve the friction and wear properties of phenolic resin-based friction composites. Thus, the composites with different relative amounts of CPC and h-BN as the friction modifiers were prepared by compression molding. The hardness and bending strength of the friction composites were measured. The friction and wear behaviors of the composites sliding against cast iron at various temperatures were evaluated using a pin-on-disc test rig. The worn surfaces and wear debris of the friction composites were analyzed by means of scanning electron microscopy, energy dispersive spectroscopy, and X-ray photoelectron spectroscopy. It was found that the hybrid of the two friction modifiers was effective to significantly decrease the wear rate and stabilize the friction coefficient of the friction composites at various temperatures by forming a uniform lubricating and/or transferred film on the rubbing surfaces. The uniform and durable transfer films were also able to effectively diminish the direct contact between the friction composite and the cast iron counterpart and hence prevent severe wear of the latter as well. The effectiveness of the hybrid of CPC and h-BN in improving the friction and wear behavior of the phenolic resin-based friction modifiers could be attributed to the complementary action of the 'low temperature' lubricity of CPC and the 'high temperature' lubricity of h-BN. The optimum ratio of the two friction modifiers CPC and h-BN in the friction composites was suggested to be 1:1, and the corresponding friction composite showed the best friction-reducing and antiwear abilities

  12. Surfactant exfoliated 2D hexagonal Boron Nitride (2D-hBN) explored as a potential electrochemical sensor for dopamine: surfactants significantly influence sensor capabilities.

    Science.gov (United States)

    Khan, Aamar F; Brownson, Dale A C; Foster, Christopher W; Smith, Graham C; Banks, Craig E

    2017-05-21

    Surfactant exfoliated 2D hexagonal Boron Nitride (2D-hBN) nanosheets are explored as a potential electrochemical sensing platform and evaluated towards the electroanalytical sensing of dopamine (DA) in the presence of the common interferents, ascorbic acid (AA) and uric acid (UA). Surfactant exfoliated 2D-hBN nanosheets (2-4 layers) fabricated using sodium cholate in aqueous media are electrically wired via a drop-casting modification process onto disposable screen-printed graphite electrodes (SPEs). We critically evaluate the performance of these 2D-hBN modified SPEs and demonstrate the effect of 'mass coverage' towards the detection of DA, AA and UA. Previous studies utilising surfactant-free (pristine) 2D-hBN modified SPEs have shown a beneficial effect towards the detection of DA, AA and UA when compared to the underlying/unmodified graphite-based electrode. We show that the fabrication route utilised to prepare 2D-hBN is a vital experimental consideration, such that the beneficial effect previously reported is considerably reduced when surfactant exfoliated 2D-hBN is utilised. We demonstrate for the first time, through implementation of control experiments in the form of surfactant modified graphite electrodes, that sodium cholate is a major contributing factor to the aforementioned detrimental behaviour. The significance here is not in the material per se, but the fundamental knowledge of the surfactant and surface coverage changing the electrochemical properties of the material under investigation. Given the wide variety of ionic and non-ionic surfactants that are utilised in the manufacture of novel 2D materials, the control experiments reported herein need to be performed in order to de-convolute the electrochemical response and effectively evaluate the 'underlying surface/surfactant/2D materials' electrocatalytic contribution.

  13. Manipulation of surface plasmon polariton propagation on isotropic and anisotropic two-dimensional materials coupled to boron nitride heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Inampudi, Sandeep; Nazari, Mina; Forouzmand, Ali; Mosallaei, Hossein, E-mail: hosseinm@coe.neu.edu [Department of Electrical and Computer Engineering, Northeastern University, 360 Huntington Ave., Boston, Massachusetts 02115 (United States)

    2016-01-14

    We present a comprehensive analysis of surface plasmon polariton dispersion characteristics associated with isotropic and anisotropic two-dimensional atomically thin layered materials (2D sheets) coupled to h-BN heterostructures. A scattering matrix based approach is presented to compute the electromagnetic fields and related dispersion characteristics of stacked layered systems composed of anisotropic 2D sheets and uniaxial bulk materials. We analyze specifically the surface plasmon polariton (SPP) dispersion characteristics in case of isolated and coupled two-dimensional layers with isotropic and anisotropic conductivities. An analysis based on residue theorem is utilized to identify optimum optical parameters (surface conductivity) and geometrical parameters (separation between layers) to maximize the SPP field at a given position. The effect of type and degree of anisotropy on the shapes of iso-frequency curves and propagation characteristics is discussed in detail. The analysis presented in this paper gives an insight to identify optimum setup to enhance the SPP field at a given position and in a given direction on the surface of two-dimensional materials.

  14. Method of manufacture of atomically thin boron nitride

    Science.gov (United States)

    Zettl, Alexander K

    2013-08-06

    The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

  15. Nano boron nitride flatland.

    Science.gov (United States)

    Pakdel, Amir; Bando, Yoshio; Golberg, Dmitri

    2014-02-07

    Recent years have witnessed many breakthroughs in research on two-dimensional (2D) nanomaterials, among which is hexagonal boron nitride (h-BN), a layered material with a regular network of BN hexagons. This review provides an insight into the marvellous nano BN flatland, beginning with a concise introduction to BN and its low-dimensional nanostructures, followed by an overview of the past and current state of research on 2D BN nanostructures. A comprehensive review of the structural characteristics and synthetic routes of BN monolayers, multilayers, nanomeshes, nanowaves, nanoflakes, nanosheets and nanoribbons is presented. In addition, electronic, optical, thermal, mechanical, magnetic, piezoelectric, catalytic, ecological, biological and wetting properties, applications and research perspectives for these novel 2D nanomaterials are discussed.

  16. Hexagon solar power panel

    Science.gov (United States)

    Rubin, I. (Inventor)

    1978-01-01

    A solar energy panel support is described upon which silicon cells are arrayed. The cells are wafer thin and of two geometrical types, both of the same area and electrical rating, namely hexagon cells and hourglass cells. The hourglass cells are composites of half hexagons. A near perfect nesting relationship of the cells achieves a high density packing whereby optimum energy production per panel area is achieved.

  17. Hexagon solar power panel

    Science.gov (United States)

    Rubin, Irwin

    1978-01-01

    A solar energy panel comprises a support upon which silicon cells are arrayed. The cells are wafer thin and of two geometrical types, both of the same area and electrical rating, namely hexagon cells and hourglass cells. The hourglass cells are composites of half hexagons. A near perfect nesting relationship of the cells achieves a high density packing whereby optimum energy production per panel area is achieved.

  18. Anisotropic Effective Mass, Optical Property, and Enhanced Band Gap in BN/Phosphorene/BN Heterostructures.

    Science.gov (United States)

    Hu, Tao; Hong, Jisang

    2015-10-28

    Phosphorene is receiving great research interests because of its peculiar physical properties. Nonetheless, the phosphorus has a trouble of degradation due to oxidation. Hereby, we propose that the electrical and optical anisotropic properties can be preserved by encapsulating into hexagonal boron nitride (h-BN). We found that the h-BN contributed to enhancing the band gap of the phosphorene layer. Comparing the band gap of the pristine phosphorene layer, the band gap of the phosphorene/BN(1ML) system was enhanced by 0.15 eV. It was further enhanced by 0.31 eV in the BN(1ML)/phosphorene/BN(1ML) trilayer structure. However, the band gap was not further enhanced when we increased the thickness of the h-BN layers even up to 4 MLs. Interestingly, the anisotropic effective mass and optical property were still preserved in BN/phosphorene/BN heterostructures. Overall, we predict that the capping of phosphorene by the h-BN layers can be an excellent solution to protect the intrinsic properties of the phosphorene.

  19. Safety Assessment of Boron Nitride as Used in Cosmetics.

    Science.gov (United States)

    Fiume, Monice M; Bergfeld, Wilma F; Belsito, Donald V; Hill, Ronald A; Klaassen, Curtis D; Liebler, Daniel C; Marks, James G; Shank, Ronald C; Slaga, Thomas J; Snyder, Paul W; Andersen, F Alan

    2015-01-01

    The Cosmetic Ingredient Review Expert Panel (Panel) assessed the safety of boron nitride which functions in cosmetics as a slip modifier (ie, it has a lubricating effect). Boron nitride is an inorganic compound with a crystalline form that can be hexagonal, spherical, or cubic; the hexagonal form is presumed to be used in cosmetics. The highest reported concentration of use of boron nitride is 25% in eye shadow formulations. Although boron nitride nanotubes are produced, boron nitride is not listed as a nanomaterial used in cosmetic formulations. The Panel reviewed available chemistry, animal data, and clinical data and concluded that this ingredient is safe in the present practices of use and concentration in cosmetic formulations. © The Author(s) 2015.

  20. Boron reclamation

    International Nuclear Information System (INIS)

    Smith, R.M.

    1980-07-01

    A process to recover high purity 10 B enriched crystalline boron powder from a polymeric matrix was developed on a laboratory basis and ultimately scaled up to production capacity. The process is based on controlled pyrolysis of boron-filled scrap followed by an acid leach and dry sieving operation to return the powder to the required purity and particle size specifications. Typically, the recovery rate of the crystalline powder is in excess of 98.5 percent, and some of the remaining boron is recovered in the form of boric acid. The minimum purity requirement of the recovered product is 98.6 percent total boron

  1. Morphology control of hexagonal strontium ferrite micro/nano-crystals

    Directory of Open Access Journals (Sweden)

    Deyang Chen

    2017-05-01

    Full Text Available In this study, controllable morphology evolution of hexagonal strontium ferrite (SrFe12O19 micro/nano-crystals has been demonstrated. Single phase strontium ferrite platelets with hexagonal morphology were successfully prepared by conventional ceramic process. In the hexagonal crystals, it is revealed that the anisotropic growth rate is changed, with the increasing of ball milling time, from relatively high rate along the direction (c-axis to direction, leading to the morphology evolution. Moreover, the optimal saturation magnetization (MS is 69.5 emu/g, which is intensely close to the theoretical value (72 emu/g. This study provides the direct evidence of the enhanced reaction activity induced by high energy ball milling in strontium hexaferrite platelets and the obtained SrFe12O19 particles are promising for the hard magnet application and the magnetoelectric electronics.

  2. Evolution of thermo-physical properties and annealing of fast neutron irradiated boron carbide

    Science.gov (United States)

    Gosset, Dominique; Kryger, Bernard; Bonal, Jean-Pierre; Verdeau, Caroline; Froment, Karine

    2018-03-01

    Boron carbide is widely used as a neutron absorber in most nuclear reactors, in particular in fast neutron ones. The irradiation leads to a large helium production (up to 1022/cm3) together with a strong decrease of the thermal conductivity. In this paper, we have performed thermal diffusivity measurements and X-ray diffraction analyses on boron carbide samples coming from control rods of the French Phenix LMFBR reactor. The burnups range from 1021 to 8.1021/cm3. We first confirm the strong decrease of the thermal conductivity at the low burnup, together with high microstructural modifications: swelling, large micro-strains, high defects density, and disordered-like material conductivity. We observe the microstructural parameters are highly anisotropic, with high micro-strains and flattened coherent diffracting domains along the (00l) direction of the hexagonal structure. Performing heat treatments up to high temperature (2200 °C) allows us to observe the material thermal conductivity and microstructure restoration. It then appears the thermal conductivity healing is correlated to the micro-strain relaxation. We then assume the defects responsible for most of the damage are the helium bubbles and the associated stress fields.

  3. Hexagonal quartz resonator

    Science.gov (United States)

    Peters, Roswell D. M.

    1982-01-01

    A generally flat, relatively thin AT-cut piezoelectric resonator element structured to minimize the force-frequency effect when mounted and energized in a housing. The resonator is in the form of an equilateral hexagon with the X crystallographic axis of the crystal passing through one set of opposing corners with mounting being effected at an adjacent set of corners respectively .+-.60.degree. away from the X axis which thereby results in a substantially zero frequency shift of the operating frequency.

  4. Hexagonalization of correlation functions

    International Nuclear Information System (INIS)

    Fleury, Thiago; Komatsu, Shota

    2017-01-01

    We propose a nonperturbative framework to study general correlation functions of single-trace operators in N=4 supersymmetric Yang-Mills theory at large N. The basic strategy is to decompose them into fundamental building blocks called the hexagon form factors, which were introduced earlier to study structure constants using integrability. The decomposition is akin to a triangulation of a Riemann surface, and we thus call it hexagonalization. We propose a set of rules to glue the hexagons together based on symmetry, which naturally incorporate the dependence on the conformal and the R-symmetry cross ratios. Our method is conceptually different from the conventional operator product expansion and automatically takes into account multi-trace operators exchanged in OPE channels. To illustrate the idea in simple set-ups, we compute four-point functions of BPS operators of arbitrary lengths and correlation functions of one Konishi operator and three short BPS operators, all at one loop. In all cases, the results are in perfect agreement with the perturbative data. We also suggest that our method can be a useful tool to study conformal integrals, and show it explicitly for the case of ladder integrals.

  5. Hexagonalization of correlation functions

    Energy Technology Data Exchange (ETDEWEB)

    Fleury, Thiago [Instituto de Física Teórica, UNESP - University Estadual Paulista,ICTP South American Institute for Fundamental Research,Rua Dr. Bento Teobaldo Ferraz 271, 01140-070, São Paulo, SP (Brazil); Komatsu, Shota [Perimeter Institute for Theoretical Physics,31 Caroline St N Waterloo, Ontario N2L 2Y5 (Canada)

    2017-01-30

    We propose a nonperturbative framework to study general correlation functions of single-trace operators in N=4 supersymmetric Yang-Mills theory at large N. The basic strategy is to decompose them into fundamental building blocks called the hexagon form factors, which were introduced earlier to study structure constants using integrability. The decomposition is akin to a triangulation of a Riemann surface, and we thus call it hexagonalization. We propose a set of rules to glue the hexagons together based on symmetry, which naturally incorporate the dependence on the conformal and the R-symmetry cross ratios. Our method is conceptually different from the conventional operator product expansion and automatically takes into account multi-trace operators exchanged in OPE channels. To illustrate the idea in simple set-ups, we compute four-point functions of BPS operators of arbitrary lengths and correlation functions of one Konishi operator and three short BPS operators, all at one loop. In all cases, the results are in perfect agreement with the perturbative data. We also suggest that our method can be a useful tool to study conformal integrals, and show it explicitly for the case of ladder integrals.

  6. Material Induced Anisotropic Damage

    NARCIS (Netherlands)

    Niazi, Muhammad Sohail; Wisselink, H.H.; Meinders, Vincent T.; van den Boogaard, Antonius H.; Hora, P.

    2012-01-01

    The anisotropy in damage can be driven by two different phenomena; anisotropic defor-mation state named Load Induced Anisotropic Damage (LIAD) and anisotropic (shape and/or distribution) second phase particles named Material Induced Anisotropic Damage (MIAD). Most anisotropic damage models are based

  7. Anisotropic universe with anisotropic sources

    Science.gov (United States)

    Aluri, Pavan K.; Panda, Sukanta; Sharma, Manabendra; Thakur, Snigdha

    2013-12-01

    We analyze the state space of a Bianchi-I universe with anisotropic sources. Here we consider an extended state space which includes null geodesics in this background. The evolution equations for all the state observables are derived. Dynamical systems approach is used to study the evolution of these equations. The asymptotic stable fixed points for all the evolution equations are found. We also check our analytic results with numerical analysis of these dynamical equations. The evolution of the state observables are studied both in cosmic time and using a dimensionless time variable. Then we repeat the same analysis with a more realistic scenario, adding the isotropic (dust like dark) matter and a cosmological constant (dark energy) to our anisotropic sources, to study their co-evolution. The universe now approaches a de Sitter space asymptotically dominated by the cosmological constant. The cosmic microwave background anisotropy maps due to shear are also generated in this scenario, assuming that the universe contains anisotropic matter along with the usual (dark) matter and vacuum (dark) energy since decoupling. We find that they contribute dominantly to the CMB quadrupole. We also constrain the current level of anisotropy and also search for any cosmic preferred axis present in the data. We use the Union 2 Supernovae data to this extent. An anisotropy axis close to the mirror symmetry axis seen in the cosmic microwave background data from Planck probe is found.

  8. Boron nitride - Composition, optical properties, and mechanical behavior

    Science.gov (United States)

    Pouch, John J.; Alterovitz, Samuel A.; Miyoshi, Kazuhisa; Warner, Joseph D.

    1987-01-01

    A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at. percent. The carbon and oxygen impurities were in the 5 to 8 at. percent range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

  9. Boron nitride: Composition, optical properties and mechanical behavior

    Science.gov (United States)

    Pouch, John J.; Alterovitz, Samuel A.; Miyoshi, Kazuhisa; Warner, Joseph D.

    1987-01-01

    A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

  10. Effect of boron concentration on physicochemical properties of boron-doped carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Keru, Godfrey; Ndungu, Patrick G.; Nyamori, Vincent O., E-mail: nyamori@ukzn.ac.za

    2015-03-01

    Boron-doped carbon nanotubes (B-CNTs) were synthesized using chemical vapour deposition (CVD) floating catalyst method. Toluene was used as the carbon source, triphenylborane as boron as well as the carbon source while ferrocene was used as the catalyst. The amount of triphenylborane used was varied in a solution of toluene and ferrocene. Ferrocene was kept constant at 2.5 wt.%. while a maximum temperature of 900 °C was used for the synthesis of the shaped carbon nanomaterial (SCNMs). SCNMs obtained were characterized by the use of transmission electron microscope (TEM), scanning electron microscope (SEM), high resolution-electron microscope, electron dispersive X-ay spectroscopy (EDX), Raman spectroscopy, inductively coupled plasma-optical emission spectroscopy (ICP-OES), vibrating sample magnetometer (VSM), nitrogen adsorption at 77 K, and inverse gas chromatography. TEM and SEM analysis confirmed SCNMs obtained were a mixture of B-CNTs and carbon nanofibres (B-CNF). EDX and ICP-OES results showed that boron was successively incorporated into the carbon hexagonal network of CNTs and its concentration was dependent on the amount of triphenylborane used. From the VSM results, the boron doping within the CNTs introduced ferromagnetic properties, and as the percentage of boron increased the magnetic coactivity and squareness changed. In addition, boron doping changed the conductivity and the surface energy among other physicochemical properties of B-CNTs. - Highlights: • Boron-doping of carbon nanotubes (CNTs) changes their physiochemical properties. • Amount of boron-doping was dependent on the wt.% of boron precursor used. • Boron-doping changed CNTs surfaces and the distribution of dispersive energy sites. • Boron-doping affected the conductivity and ferromagnetic properties. • Increased boron-doping results in a more favourable interaction with polar probes.

  11. Boron Nitride Nanoribbons from Exfoliation of Boron Nitride Nanotubes

    Science.gov (United States)

    Hung, Ching-Cheh; Hurst, Janet; Santiago, Diana

    2017-01-01

    Two types of boron nitride nanotubes (BNNTs) were exfoliated into boron nitride nanoribbons (BNNR), which were identified using transmission electron microscopy: (1) commercial BNNTs with thin tube walls and small diameters. Tube unzipping was indicated by a large decrease of the sample's surface area and volume for pores less than 2 nm in diameter. (2) BNNTs with large diameters and thick walls synthesized at NASA Glenn Research Center. Here, tube unraveling was indicated by a large increase in external surface area and pore volume. For both, the exfoliation process was similar to the previous reported method to exfoliate commercial hexagonal boron nitride (hBN): Mixtures of BNNT, FeCl3, and NaF (or KF) were sequentially treated in 250 to 350 C nitrogen for intercalation, 500 to 750 C air for exfoliation, and finally HCl for purification. Property changes of the nanosized boron nitride throughout this process were also similar to the previously observed changes of commercial hBN during the exfoliation process: Both crystal structure (x-ray diffraction data) and chemical properties (Fourier-transform infrared spectroscopy data) of the original reactant changed after intercalation and exfoliation, but most (not all) of these changes revert back to those of the reactant once the final, purified products are obtained.

  12. Hexagonal graphene quantum dots

    KAUST Repository

    Ghosh, Sumit

    2016-12-05

    We study hexagonal graphene quantum dots, using density functional theory, to obtain a quantitative description of the electronic properties and their size dependence, considering disk and ring geometries with both armchair and zigzag edges. We show that the electronic properties of quantum dots with armchair edges are more sensitive to structural details than those with zigzag edges. As functions of the inner and outer radii, we find in the case of armchair edges that the size of the band gap follows distinct branches, while in the case of zigzag edges it changes monotonically. This behaviour is further analyzed by studying the ground state wave function and explained in terms of its localisation.

  13. Obtuse triangle suppression in anisotropic meshes

    KAUST Repository

    Sun, Feng

    2011-12-01

    Anisotropic triangle meshes are used for efficient approximation of surfaces and flow data in finite element analysis, and in these applications it is desirable to have as few obtuse triangles as possible to reduce the discretization error. We present a variational approach to suppressing obtuse triangles in anisotropic meshes. Specifically, we introduce a hexagonal Minkowski metric, which is sensitive to triangle orientation, to give a new formulation of the centroidal Voronoi tessellation (CVT) method. Furthermore, we prove several relevant properties of the CVT method with the newly introduced metric. Experiments show that our algorithm produces anisotropic meshes with much fewer obtuse triangles than using existing methods while maintaining mesh anisotropy. © 2011 Elsevier B.V. All rights reserved.

  14. Raman spectroscopy of boron-doped single-layer graphene.

    Science.gov (United States)

    Kim, Yoong Ahm; Fujisawa, Kazunori; Muramatsu, Hiroyuki; Hayashi, Takuya; Endo, Morinobu; Fujimori, Toshihiko; Kaneko, Katsumi; Terrones, Mauricio; Behrends, Jan; Eckmann, Axel; Casiraghi, Cinzia; Novoselov, Kostya S; Saito, Riichiro; Dresselhaus, Mildred S

    2012-07-24

    The introduction of foreign atoms, such as nitrogen, into the hexagonal network of an sp(2)-hybridized carbon atom monolayer has been demonstrated and constitutes an effective tool for tailoring the intrinsic properties of graphene. Here, we report that boron atoms can be efficiently substituted for carbon in graphene. Single-layer graphene substitutionally doped with boron was prepared by the mechanical exfoliation of boron-doped graphite. X-ray photoelectron spectroscopy demonstrated that the amount of substitutional boron in graphite was ~0.22 atom %. Raman spectroscopy demonstrated that the boron atoms were spaced 4.76 nm apart in single-layer graphene. The 7-fold higher intensity of the D-band when compared to the G-band was explained by the elastically scattered photoexcited electrons by boron atoms before emitting a phonon. The frequency of the G-band in single-layer substitutionally boron-doped graphene was unchanged, which could be explained by the p-type boron doping (stiffening) counteracting the tensile strain effect of the larger carbon-boron bond length (softening). Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.

  15. Crystalline boron nitride aerogels

    Energy Technology Data Exchange (ETDEWEB)

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

    2017-12-12

    This disclosure provides methods and materials related to boron nitride aerogels. For example, one aspect relates to a method for making an aerogel comprising boron nitride, comprising: (a) providing boron oxide and an aerogel comprising carbon; (b) heating the boron oxide to melt the boron oxide and heating the aerogel; (c) mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide; and (d) converting at least a portion of the carbon to boron nitride to obtain the aerogel comprising boron nitride. Another aspect relates to a method for making an aerogel comprising boron nitride, comprising heating boron oxide and an aerogel comprising carbon under flow of a nitrogen-containing gas, wherein boron oxide vapor and the nitrogen-containing gas convert at least a portion of the carbon to boron nitride to obtain the aerogel comprising boron nitride.

  16. Optical properties of boron-group (V) hexagonal nanowires: DFT ...

    Indian Academy of Sciences (India)

    B Santhibhushan

    2017-06-20

    Jun 20, 2017 ... global warming, the search for highly efficient clean renewable energy sources such as solar cells is in high demand. Studying the properties of III–V compound nanowires [1–4] for their application in photovoltaics, optoelectronics and nanoelectronic devices is on rise and has become an extensive area of ...

  17. Bandgap engineered graphene and hexagonal boron nitride for ...

    Indian Academy of Sciences (India)

    ATLAS device simulator of SILVACO TCAD [25] is used for numerical calculation. ..... port parameters. In our device the rough edges between h-BN and graphene are perpendicular to the transport direc- tion, which is not the case for disorder GNRs [32] where the direction of the rough edges is parallel. Owing to the exis-.

  18. Optical properties of boron-group (V) hexagonal nanowires: DFT ...

    Indian Academy of Sciences (India)

    B Santhibhushan

    B SANTHIBHUSHAN. ∗. , MAHESH SONI and ANURAG SRIVASTAVA. Advanced Materials Research Group, CNT Laboratory, ABV-Indian Institute of Information Technology and. Management, Gwalior 474 010, India. ∗. Corresponding author. E-mail: bsb8897@gmail.com. Published online 20 June 2017. Abstract.

  19. The different adsorption mechanism of methane molecule onto a boron nitride and a graphene flakes

    International Nuclear Information System (INIS)

    Seyed-Talebi, Seyedeh Mozhgan; Neek-Amal, M.

    2014-01-01

    Graphene and single layer hexagonal boron-nitride are two newly discovered 2D materials with wonderful physical properties. Using density functional theory, we study the adsorption mechanism of a methane molecule over a hexagonal flake of single layer hexagonal boron-nitride (h-BN) and compare the results with those of graphene. We found that independent of the used functional in our ab-initio calculations, the adsorption energy in the h-BN flake is larger than that for graphene. Despite of the adsorption energy profile of methane over a graphene flake, we show that there is a long range behavior beyond minimum energy in the adsorption energy of methane over h-BN flake. This result reveals the higher sensitivity of h-BN sheet to the adsorption of a typical closed shell molecule with respect to graphene. The latter gives insight in the recent experiments of graphene over hexagonal boron nitride.

  20. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  1. Problems and possibilities of development of boron nitride ceramics

    International Nuclear Information System (INIS)

    Rusanova, L.N.; Romashin, A.G.; Kulikova, G.I.; Golubeva, O.P.

    1988-01-01

    The modern state of developments in the field of technology of ceramics produced from boron nitride is analyzed. Substantial difficulties in production of pure ceramics from hexagonal and wurtzite-like boron nitride are stated as related to the structure peculiarities and inhomogeneity of chemical bonds in elementary crystal cells of various modifications. Advantages and disadvantages of familiar technological procedures in production of boron nitride ceramics are compared. A new technology is suggested, which is based on the use of electroorganic compounds for hardening and protection of porous high-purity boron-nitride die from oxidation, and as high-efficient sintered elements for treatment of powders of various structures and further pyrolisis. The method is called thermal molecular lacing (TML). Properties of ceramics produced by the TML method are compared with characteristics of well-known brands of boron nitride ceramics

  2. Theoretical Investigations of the Hexagonal Germanium Carbonitride

    Directory of Open Access Journals (Sweden)

    Xinhai Yu

    2018-04-01

    Full Text Available The structural, mechanical, elastic anisotropic, and electronic properties of hexagonal germanium carbonitride (h-GeCN are systematically investigated using the first-principle calculations method with the ultrasoft pseudopotential scheme in the frame of generalized gradient approximation in the present work. The h-GeCN are mechanically and dynamically stable, as proved by the elastic constants and phonon spectra, respectively. The h-GeCN is brittle because the ratio B/G and Poisson’s ratio v of the h-GeCN are less than 1.75 and 0.26, respectively. For h-GeCN, from brittleness to ductility, the transformation pressures are 5.56 GPa and 5.63 GPa for B/G and Poisson’s ratio v, respectively. The h-GeCN exhibits the greater elastic anisotropy in Young’s modulus and the sound velocities. In addition, the calculated band structure of h-GeCN reveals that there is no band gap for h-GeCN with the HSE06 hybrid functional, so the h-GeCN is metallic.

  3. Synthesis, Characterization, and Fabrication of Boron Nitride and Carbon Nanomaterials, their Applications, and the Extended Pressure Inductively Coupled Plasma Synthesis of Boron Nitride Nanotubes

    OpenAIRE

    Fathalizadeh, Aidin

    2016-01-01

    Nanoscale materials made of carbon, boron, and nitrogen, namely BCN nanostructures, exhibit many remarkable properties making them uniquely suitable for a host of applications. Boron nitride (BN) and carbon (C) nanomaterials are structurally similar. The forms studied here originate from a two-dimensional hexagonally arranged structure of sp2 bonded atoms. These nanomaterials exhibit extraordinary mechanical and thermal properties. However, the unique chemical compositions of carbon and bo...

  4. Hexagonal response matrix using symmetries

    International Nuclear Information System (INIS)

    Gotoh, Y.

    1991-01-01

    A response matrix for use in core calculations for nuclear reactors with hexagonal fuel assemblies is presented. It is based on the incoming currents averaged over the half-surface of a hexagonal node by applying symmetry theory. The boundary conditions of the incoming currents on the half-surface of the node are expressed by a complete set of orthogonal vectors which are constructed from symmetrized functions. The expansion coefficients of the functions are determined by the boundary conditions of incoming currents. (author)

  5. Boron Nitride Nanotubes

    Science.gov (United States)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)

    2012-01-01

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  6. Highly Anisotropic Conductors.

    Science.gov (United States)

    Wan, Jiayu; Song, Jianwei; Yang, Zhi; Kirsch, Dylan; Jia, Chao; Xu, Rui; Dai, Jiaqi; Zhu, Mingwei; Xu, Lisha; Chen, Chaoji; Wang, Yanbin; Wang, Yilin; Hitz, Emily; Lacey, Steven D; Li, Yongfeng; Yang, Bao; Hu, Liangbing

    2017-11-01

    Composite materials with ordered microstructures often lead to enhanced functionalities that a single material can hardly achieve. Many biomaterials with unusual microstructures can be found in nature; among them, many possess anisotropic and even directional physical and chemical properties. With inspiration from nature, artificial composite materials can be rationally designed to achieve this anisotropic behavior with desired properties. Here, a metallic wood with metal continuously filling the wood vessels is developed, which demonstrates excellent anisotropic electrical, thermal, and mechanical properties. The well-aligned metal rods are confined and separated by the wood vessels, which deliver directional electron transport parallel to the alignment direction. Thus, the novel metallic wood composite boasts an extraordinary anisotropic electrical conductivity (σ || /σ ⊥ ) in the order of 10 11 , and anisotropic thermal conductivity (κ || /κ ⊥ ) of 18. These values exceed the highest reported values in existing anisotropic composite materials. The anisotropic functionality of the metallic wood enables it to be used for thermal management applications, such as thermal insulation and thermal dissipation. The highly anisotropic metallic wood serves as an example for further anisotropic materials design; other composite materials with different biotemplates/hosts and fillers can achieve even higher anisotropic ratios, allowing them to be implemented in a variety of applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Anisotropic dark energy and CMB anomalies

    International Nuclear Information System (INIS)

    Battye, Richard; Moss, Adam

    2009-01-01

    We investigate the breaking of global statistical isotropy caused by a dark energy component with an energy-momentum tensor which has point symmetry, that could represent a cubic or hexagonal crystalline lattice. In such models Gaussian, adiabatic initial conditions created during inflation can lead to anisotropies in the cosmic microwave background whose spherical harmonic coefficients are correlated, contrary to the standard assumption. We develop an adaptation of the line of sight integration method that can be applied to models where the background energy-momentum tensor is isotropic, but whose linearized perturbations are anisotropic. We then show how this can be applied to the cases of cubic and hexagonal symmetry. We compute quantities which show that such models are indistinguishable from isotropic models even in the most extreme parameter choices, in stark contrast to models with anisotropic initial conditions based on inflation. The reason for this is that the dark energy based models contribute to the CMB anisotropy via the integrated Sachs-Wolfe effect, which is only relevant when the dark energy is dominant, that is, on the very largest scales. For inflationary models, however, the anisotropy is present on all scales.

  8. Composite boron nitride neutron detectors

    Science.gov (United States)

    Roth, M.; Mojaev, E.; Khakhan, O.; Fleider, A.; Dul`kin, E.; Schieber, M.

    2014-09-01

    Single phase polycrystalline hexagonal boron nitride (BN) or mixed with boron carbide (BxC) embedded in an insulating polymeric matrix acting as a binder and forming a composite material as well as pure submicron size polycrystalline BN has been tested as a thermal neutron converter in a multilayer thermal neutron detector design. Metal sheet electrodes were covered with 20-50 μm thick layers of composite materials and assembled in a multi-layer sandwich configuration. High voltage was applied to the metal electrodes to create an interspacing electric field. The spacing volume could be filled with air, nitrogen or argon. Thermal neutrons were captured in converter layers due to the presence of the 10B isotope. The resulting nuclear reaction produced α-particles and 7Li ions which ionized the gas in the spacing volume. Electron-ion pairs were collected by the field to create an electrical signal proportional to the intensity of the neutron source. The detection efficiency of the multilayer neutron detectors is found to increase with the number of active converter layers. Pixel structures of such neutron detectors necessary for imaging applications and incorporation of internal moderator materials for field measurements of fast neutron flux intensities are discussed as well.

  9. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Kamal P. [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Mahyavanshi, Rakesh D. [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

    2017-01-30

    Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

  10. Superconductivity in heavily boron-doped silicon carbide

    OpenAIRE

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    The discoveries of superconductivity in heavily boron-doped diamond (C:B) in 2004 and silicon (Si:B) in 2006 renew the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily-boron doped silicon carbide (SiC:B). The sample used for that study consists of cubic and hexagonal SiC ph...

  11. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  12. Superconductivity in heavily boron-doped silicon carbide.

    Science.gov (United States)

    Kriener, Markus; Muranaka, Takahiro; Kato, Junya; Ren, Zhi-An; Akimitsu, Jun; Maeno, Yoshiteru

    2008-12-01

    The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  13. Boron nitride converted carbon fiber

    Science.gov (United States)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  14. Boron carbide nanowires with uniform CNx coatings

    Science.gov (United States)

    Zhang, H. Z.; Wang, R. M.; You, L. P.; Yu, J.; Chen, H.; Yu, D. P.; Chen, Y.

    2007-01-01

    Boron carbide nanowires with uniform carbon nitride coating layers were synthesized on a silicon substrate using a simple thermal process. The structure and morphology of the as-synthesized nanowires were characterized using x-ray diffraction, scanning and transmission electron microscopy and electron energy loss spectroscopy. A correlation between the surface smoothness of the nanowire sidewalls and their lateral sizes has been observed and it is a consequence of the anisotropic formation of the coating layers. A growth mechanism is also proposed for these growth phenomena.

  15. Anisotropic light diffusion: an oxymoron?

    Science.gov (United States)

    Kienle, Alwin

    2007-05-25

    Light propagation in anisotropic random media is studied in the steady-state and time domains. Solutions of the anisotropic diffusion equation are compared to results obtained by the Monte Carlo method. Contrary to what has been reported so far, we find that even in the "diffusive regime" the anisotropic diffusion equation does not describe correctly the light propagation in anisotropic random media.

  16. Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-ray Emission Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Muramatsu, Yasuji; Iihara, Junji; Takebe, Toshihiko; Denlinger, Jonathan D.

    2008-03-29

    To analyze the local structure and/or chemical states of boron atoms in boron-doped diamond, which can be synthesized by the microwave plasma-assisted chemical vapor deposition method (CVD-B-diamond) and the temperature gradient method at high pressure and high temperature (HPT-B-diamond), we measured the soft X-ray emission spectra in the CK and BK regions of B-diamonds using synchrotron radiation at the Advanced Light Source (ALS). X-ray spectral analyses using the fingerprint method and molecular orbital calculations confirm that boron atoms in CVD-B-diamond substitute for carbon atoms in the diamond lattice to form covalent B-C bonds, while boron atoms in HPT-B-diamond react with the impurity nitrogen atoms to form hexagonal boron nitride. This suggests that the high purity diamond without nitrogen impurities is necessary to synthesize p-type B-diamond semiconductors.

  17. Anisotropic ray trace

    Science.gov (United States)

    Lam, Wai Sze Tiffany

    Optical components made of anisotropic materials, such as crystal polarizers and crystal waveplates, are widely used in many complex optical system, such as display systems, microlithography, biomedical imaging and many other optical systems, and induce more complex aberrations than optical components made of isotropic materials. The goal of this dissertation is to accurately simulate the performance of optical systems with anisotropic materials using polarization ray trace. This work extends the polarization ray tracing calculus to incorporate ray tracing through anisotropic materials, including uniaxial, biaxial and optically active materials. The 3D polarization ray tracing calculus is an invaluable tool for analyzing polarization properties of an optical system. The 3x3 polarization ray tracing P matrix developed for anisotropic ray trace assists tracking the 3D polarization transformations along a ray path with series of surfaces in an optical system. To better represent the anisotropic light-matter interactions, the definition of the P matrix is generalized to incorporate not only the polarization change at a refraction/reflection interface, but also the induced optical phase accumulation as light propagates through the anisotropic medium. This enables realistic modeling of crystalline polarization elements, such as crystal waveplates and crystal polarizers. The wavefront and polarization aberrations of these anisotropic components are more complex than those of isotropic optical components and can be evaluated from the resultant P matrix for each eigen-wavefront as well as for the overall image. One incident ray refracting or reflecting into an anisotropic medium produces two eigenpolarizations or eigenmodes propagating in different directions. The associated ray parameters of these modes necessary for the anisotropic ray trace are described in Chapter 2. The algorithms to calculate the P matrix from these ray parameters are described in Chapter 3 for

  18. Anisotropic contrast optical microscope.

    Science.gov (United States)

    Peev, D; Hofmann, T; Kananizadeh, N; Beeram, S; Rodriguez, E; Wimer, S; Rodenhausen, K B; Herzinger, C M; Kasputis, T; Pfaunmiller, E; Nguyen, A; Korlacki, R; Pannier, A; Li, Y; Schubert, E; Hage, D; Schubert, M

    2016-11-01

    An optical microscope is described that reveals contrast in the Mueller matrix images of a thin, transparent, or semi-transparent specimen located within an anisotropic object plane (anisotropic filter). The specimen changes the anisotropy of the filter and thereby produces contrast within the Mueller matrix images. Here we use an anisotropic filter composed of a semi-transparent, nanostructured thin film with sub-wavelength thickness placed within the object plane. The sample is illuminated as in common optical microscopy but the light is modulated in its polarization using combinations of linear polarizers and phase plate (compensator) to control and analyze the state of polarization. Direct generalized ellipsometry data analysis approaches permit extraction of fundamental Mueller matrix object plane images dispensing with the need of Fourier expansion methods. Generalized ellipsometry model approaches are used for quantitative image analyses. These images are obtained from sets of multiple images obtained under various polarizer, analyzer, and compensator settings. Up to 16 independent Mueller matrix images can be obtained, while our current setup is limited to 11 images normalized by the unpolarized intensity. We demonstrate the anisotropic contrast optical microscope by measuring lithographically defined micro-patterned anisotropic filters, and we quantify the adsorption of an organic self-assembled monolayer film onto the anisotropic filter. Comparison with an isotropic glass slide demonstrates the image enhancement obtained by our method over microscopy without the use of an anisotropic filter. In our current instrument, we estimate the limit of detection for organic volumetric mass within the object plane of ≈49 fg within ≈7 × 7 μm 2 object surface area. Compared to a quartz crystal microbalance with dissipation instrumentation, where contemporary limits require a total load of ≈500 pg for detection, the instrumentation demonstrated here improves

  19. Anisotropic Weyl invariance

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Nadal, Guillem [Universidad de Buenos Aires, Buenos Aires (Argentina)

    2017-07-15

    We consider a non-relativistic free scalar field theory with a type of anisotropic scale invariance in which the number of coordinates ''scaling like time'' is generically greater than one. We propose the Cartesian product of two curved spaces, the metric of each space being parameterized by the other space, as a notion of curved background to which the theory can be extended. We study this type of geometries, and find a family of extensions of the theory to curved backgrounds in which the anisotropic scale invariance is promoted to a local, Weyl-type symmetry. (orig.)

  20. HEXBU-3D, a three-dimensional PWR-simulator program for hexagonal fuel assemblies

    International Nuclear Information System (INIS)

    Karvinen, E.

    1981-06-01

    HEXBU-3D is a three-dimensional nodal simulator program for PWR reactors. It is designed for a reactor core that consists of hexagonal fuel assemblies and of big follower-type control assemblies. The program solves two-group diffusion equations in homogenized fuel assembly geometry by a sophisticated nodal method. The treatment of feedback effects from xenon-poisoning, fuel temperature, moderator temperature and density and soluble boron concentration are included in the program. The nodal equations are solved by a fast two-level iteration technique and the eigenvalue can be either the effective multiplication factor or the boron concentration of the moderator. Burnup calculations are performed by tabulated sets of burnup-dependent cross sections evaluated by a cell burnup program. HEXBY-3D has been originally programmed in FORTRAN V for the UNIVAC 1108 computer, but there is also another version which is operable on the CDC CYBER 170 computer. (author)

  1. Anisotropic growth mechanism of tungsten diselenide domains using chemical vapor deposition method

    Science.gov (United States)

    Lee, Yoobeen; Jeong, Heekyung; Park, Yi-Seul; Han, Seulki; Noh, Jaegeun; Lee, Jin Seok

    2018-02-01

    Anisotropic transition metal dichalcogenide (TMDC) domains have stimulated a growing interest mainly due to their electronic properties that depend on the size, shape, and edge structures of the domains. In this work, we investigated the anisotropic morphogenesis and edge terminations of tungsten diselenide (WSe2) domains grown on sapphire substrates by chemical vapor deposition (CVD) using tungsten oxide (WO3) and selenium (Se) powders as precursors. We varied the amount of Se powder and growth temperature during the CVD process, which in turn caused variations in the growth mechanism and kinetic energies of precursors. We succeeded in synthesizing hexagonal, square, circular, and triangular anisotropic WSe2 domains. They were characterized using scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL) analyses, and atomic force microscopy (AFM). Furthermore, we proposed the growth mechanism of anisotropic WSe2 domains with different edge terminations based on experimental observations through scanning tunneling microscope (STM).

  2. Boron carbide nanowires: Synthesis and characterization

    Science.gov (United States)

    Guan, Zhe

    Bulk boron carbide has been widely used in ballistic armored vest and the property characterization has been heavily focused on mechanical properties. Even though boron carbides have also been projected as a promising class of high temperature thermoelectric materials for energy harvesting, the research has been limited in this field. Since the thermal conductivity of bulk boron carbide is still relatively high, there is a great opportunity to take advantage of the nano effect to further reduce it for better thermoelectric performance. This dissertation work aims to explore whether improved thermoelectric performance can be found in boron carbide nanowires compared with their bulk counterparts. This dissertation work consists of four main parts. (1) Synthesis of boron carbide nanowires. Boron carbide nanowires were synthesized by co-pyrolysis of diborane and methane at low temperatures (with 879 °C as the lowest) in a home-built low pressure chemical vapor deposition (LPCVD) system. The CVD-based method is energy efficient and cost effective. The as-synthesized nanowires were characterized by electron microscopy extensively. The transmission electron microscopy (TEM) results show the nanowires are single crystalline with planar defects. Depending on the geometrical relationship between the preferred growth direction of the nanowire and the orientation of the defects, the as-synthesized nanowires could be further divided into two categories: transverse fault (TF) nanowires grow normal to the defect plane, while axial fault (AF) ones grow within the defect plane. (2) Understanding the growth mechanism of as-synthesized boron carbide nanowires. The growth mechanism can be generally considered as the famous vapor-liquid-solid (VLS) mechanism. TF and AF nanowires were found to be guided by Ni-B catalysts of two phases. A TF nanowire is lead by a hexagonal phase catalyst, which was proved to be in a liquid state during reaction. While an AF nanowires is catalyzed by a

  3. Millimeter wave complementary metal-oxide-semiconductor on-chip hexagonal ferrite circulator

    Science.gov (United States)

    Chao, Liu; Fu, Enjin; Koomson, Valencia J.; Afsar, Mohammed N.

    2014-05-01

    Hexagonal ferrites, such as BaFe12O19 and SrFe12O19, have strong uniaxial anisotropic magnetic field and remanent magnetism. By employing these properties, magnetic devices, such as phase shifter, isolator and circulator, can work up to tens of GHz frequency range without strong external magnetic field or even self-biasing. As the monolithic microwave integrated circuit extends to higher millimeter wave frequencies, the demand for high performance integrated passive magnetic components is more and more eminent. The micro- and nano-sized hexagonal ferrite can be conveniently utilized to fabricate magnetic components integrated in CMOS circuits via post processing. A nano-ferrite circulator working at 60 GHz is designed, fabricated, and integrated into the CMOS front end for the first time.

  4. Millimeter wave complementary metal-oxide-semiconductor on-chip hexagonal nano-ferrite circulator

    Science.gov (United States)

    Chao, Liu; Oukacha, Hassan; Fu, Enjin; Koomson, Valencia Joyner; Afsar, Mohammed N.

    2015-05-01

    Hexagonal ferrites such as M-type BaFe12O19 and SrFe12O19 have strong uniaxial anisotropic magnetic field and remanent magnetism. The nano-sized ferrite powder exhibits high compatibility and processability in composite material. New magnetic devices using the M-type ferrite materials can work in the tens of GHz frequency range from microwave to millimeter wave without the application of strong external magnetic field. The micro- and nano-sized hexagonal ferrite can be conveniently utilized to fabricate magnetic components integrated in CMOS integrated circuits as thin as several micrometers. The micro-fabrication method of such nano ferrite device is presented in this paper. A circulator working at 60 GHz is designed and integrated into the commercial CMOS process. The circulator exhibits distinct circulation properties in the frequency range from 56 GHz to 58 GHz.

  5. Hybrid-PIC Modeling of the Transport of Atomic Boron in a Hall Thruster

    Science.gov (United States)

    Smith, Brandon D.; Boyd, Iaian D.; Kamhawi, Hani

    2015-01-01

    Computational analysis of the transport of boron eroded from the walls of a Hall thruster is performed by implementing sputter yields of hexagonal boron nitride and velocity distribution functions of boron within the hybrid-PIC model HPHall. The model is applied to simulate NASA's HiVHAc Hall thruster at a discharge voltage of 500V and discharge powers of 1-3 kW. The number densities of ground- and 4P-state boron are computed. The density of ground-state boron is shown to be a factor of about 30 less than the plasma density. The density of the excited state is shown to be about three orders of magnitude less than that of the ground state, indicating that electron impact excitation does not significantly affect the density of ground-state boron in the discharge channel or near-field plume of a Hall thruster. Comparing the rates of excitation and ionization suggests that ionization has a greater influence on the density of ground-state boron, but is still negligible. The ground-state boron density is then integrated and compared to cavity ring-down spectroscopy (CRDS) measurements for each operating point. The simulation results show good agreement with the measurements for all operating points and provide evidence in support of CRDS as a tool for measuring Hall thruster erosion in situ.

  6. Anisotropic mechanical properties of graphene sheets from molecular dynamics

    International Nuclear Information System (INIS)

    Ni Zhonghua; Bu Hao; Zou Min; Yi Hong; Bi Kedong; Chen Yunfei

    2010-01-01

    Anisotropic mechanical properties are observed for a sheet of graphene along different load directions. The anisotropic mechanical properties are attributed to the hexagonal structure of the unit cells of the graphene. Under the same tensile loads, the edge bonds bear larger load in the longitudinal mode (LM) than in the transverse mode (TM), which causes fracture sooner in LM than in TM. The Young's modulus and the third order elastic modulus for the LM are slightly larger than that for the TM. Simulation also demonstrates that, for both LM and TM, the loading and unloading stress-strain response curves overlap as long as the graphene is unloaded before the fracture point. This confirms that graphene sustains complete elastic and reversible deformation in the elongation process.

  7. Fermionic pentagons and NMHV hexagon

    Directory of Open Access Journals (Sweden)

    A.V. Belitsky

    2015-05-01

    Full Text Available We analyze the near-collinear limit of the null polygonal hexagon super Wilson loop in the planar N=4 super-Yang–Mills theory. We focus on its Grassmann components which are dual to next-to-maximal helicity-violating (NMHV scattering amplitudes. The kinematics in question is studied within a framework of the operator product expansion that encodes propagation of excitations on the background of the color flux tube stretched between the sides of Wilson loop contour. While their dispersion relation is known to all orders in 't Hooft coupling from previous studies, we find their form factor couplings to the Wilson loop. This is done making use of a particular tessellation of the loop where pentagon transitions play a fundamental role. Being interested in NMHV amplitudes, the corresponding building blocks carry a nontrivial charge under the SU(4 R-symmetry group. Restricting the current consideration to twist-two accuracy, we analyze two-particle contributions with a fermion as one of the constituents in the pair. We demonstrate that these nonsinglet pentagons obey bootstrap equations that possess consistent solutions for any value of the coupling constant. To confirm the correctness of these predictions, we calculate their contribution to the super Wilson loop demonstrating agreement with recent results to four-loop order in 't Hooft coupling.

  8. Anisotropic Lyra cosmology

    Indian Academy of Sciences (India)

    Anisotropic Bianchi Type-I cosmological models have been studied on the basis of Lyra's geometry. Two types of models, one with constant deceleration parameter and the other with variable deceleration parameter have been derived by considering a time-dependent displacement field.

  9. Anisotropic Concrete Compressive Strength

    DEFF Research Database (Denmark)

    Gustenhoff Hansen, Søren; Jørgensen, Henrik Brøner; Hoang, Linh Cao

    2017-01-01

    When the load carrying capacity of existing concrete structures is (re-)assessed it is often based on compressive strength of cores drilled out from the structure. Existing studies show that the core compressive strength is anisotropic; i.e. it depends on whether the cores are drilled parallel...

  10. Variational method of determining effective moduli of polycrystals: (A) hexagonal symmetry, (B) trigonal symmetry

    Science.gov (United States)

    Peselnick, L.; Meister, R.

    1965-01-01

    Variational principles of anisotropic elasticity have been applied to aggregates of randomly oriented pure-phase polycrystals having hexagonal symmetry and trigonal symmetry. The bounds of the effective elastic moduli obtained in this way show a considerable improvement over the bounds obtained by means of the Voigt and Reuss assumptions. The Hill average is found to be in most cases a good approximation when compared to the bounds found from the variational method. The new bounds reduce in their limits to the Voigt and Reuss values. ?? 1965 The American Institute of Physics.

  11. Synthesis characterization and catalytic action of hexagonal gold nanoparticles using essential oils extracted from Anacardium occidentale

    Science.gov (United States)

    Sheny, D. S.; Mathew, Joseph; Philip, Daizy

    2012-11-01

    A new phytochemical method for the synthesis of gold nanoparticles is reported. The essential oils extracted from the fresh leaves of Anacardium occidentale are used for the reduction of auric acid to Au nanoparticles (NPs). The formation and morphology of synthesized NPs are investigated with the help of UV-visible, TEM and FTIR spectroscopy. The NPs synthesized at room temperature are mono-dispersed and hexagonal in shape with an average size of 36 nm while those prepared at higher temperature are composed of a mixture of anisotropic particles. The UV-visible absorption spectra of these anisotropic NPs show asymmetry in the longer wavelength side. The quantity of oil is an important criterion modulating the shape of NPs. Possible biochemical mechanism leading to the formation of NPs is studied using FTIR spectroscopy. The potential of synthesized Au NPs as catalyst is explored for the hydrogenation of p-nitro phenol to p-amino phenol at room temperature.

  12. Pulverization of boron element and proportions of boron carbide in boron

    International Nuclear Information System (INIS)

    Lang, F.M.; Finck, C.

    1956-01-01

    It is possible to reduce boron element into fine powder by means of a mortar and pestle made of sintered boron carbide, the ratio of boron carbide introduced being less than one per cent. Boron element at our disposal is made of sharp edged, dark brown, little grains of average size greater than 5 μ. Grain sizes smaller than 1μ are required for applying thin layers of such boron. (author) [fr

  13. Anisotropic elliptic optical fibers

    Science.gov (United States)

    Kang, Soon Ahm

    1991-05-01

    The exact characteristic equation for an anisotropic elliptic optical fiber is obtained for odd and even hybrid modes in terms of infinite determinants utilizing Mathieu and modified Mathieu functions. A simplified characteristic equation is obtained by applying the weakly guiding approximation such that the difference in the refractive indices of the core and the cladding is small. The simplified characteristic equation is used to compute the normalized guide wavelength for an elliptical fiber. When the anisotropic parameter is equal to unity, the results are compared with the previous research and they are in close agreement. For a fixed value normalized cross-section area or major axis, the normalized guide wavelength lambda/lambda(sub 0) for an anisotropic elliptic fiber is small for the larger value of anisotropy. This condition indicates that more energy is carried inside of the fiber. However, the geometry and anisotropy of the fiber have a smaller effect when the normalized cross-section area is very small or very large.

  14. Scratch-resistant transparent boron nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Dekempeneer, E.H.A.; Kuypers, S.; Vercammen, K.; Meneve, J.; Smeets, J. [Vlaamse Instelling voor Technologisch Onderzoek (VITO), Mol (Belgium); Gibson, P.N.; Gissler, W. [Joint Research Centre of the Commission of the European Communities, Institute for Advanced Materials, Ispra (Vatican City State, Holy See) (Italy)

    1998-03-01

    Transparent boron nitride (BN) coatings were deposited on glass and Si substrates in a conventional capacitively coupled RF PACVD system starting from diborane (diluted in helium) and nitrogen. By varying the plasma conditions (bias voltage, ion current density), coatings were prepared with hardness values ranging from 2 to 12 GPa (measured with a nano-indenter). Infrared absorption measurements indicated that the BN was of the hexagonal type. A combination of glancing-angle X-ray diffraction measurements and simulations shows that the coatings consist of hexagonal-type BN crystallites with different degrees of disorder (nanocrystalline or turbostratic material). High-resolution transmission electron microscopy analysis revealed the presence of an amorphous interface layer and on top of this interface layer a well-developed fringe pattern characteristic for the basal planes in h-BN. Depending on the plasma process conditions, these fringe patterns showed different degrees of disorder as well as different orientational relationships with respect to the substrate surface. These observations were correlated with the mechanical properties of the films. (orig.) 14 refs.

  15. Hydrothermal synthesis of hexagonal magnesium hydroxide nanoflakes

    International Nuclear Information System (INIS)

    Wang, Qiang; Li, Chunhong; Guo, Ming; Sun, Lingna; Hu, Changwen

    2014-01-01

    Graphical abstract: Hexagonal Mg(OH) 2 nanoflakes were synthesized via hydrothermal method in the presence of PEG-20,000. Results show that PEG-20,000 plays an important role in the formation of this kind of nanostructure. The SAED patterns taken from the different positions on a single hexagonal Mg(OH) 2 nanoflake yielded different crystalline structures. The structure of the nanoflakes are polycrystalline and the probable formation mechanism of Mg(OH) 2 nanoflakes is discussed. - Highlights: • Hexagonal Mg(OH) 2 nanoflakes were synthesized via hydrothermal method. • PEG-20,000 plays an important role in the formation of hexagonal nanostructure. • Mg(OH) 2 nanoflakes show different crystalline structures at different positions. • The probable formation mechanism of hexagonal Mg(OH) 2 nanoflakes was reported. - Abstract: Hexagonal magnesium hydroxide (Mg(OH) 2 ) nanoflakes were successfully synthesized via hydrothermal method in the presence of the surfactant polyethylene glycol 20,000 (PEG-20,000). Results show that PEG-20,000 plays an important role in the formation of this kind of nanostructure. The composition, morphologies and structure of the Mg(OH) 2 nanoflakes were characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED). The SAED patterns taken from the different positions on a single hexagonal Mg(OH) 2 nanoflake show different crystalline structures. The structure of the nanoflakes are polycrystalline and the probable formation mechanism of Mg(OH) 2 nanoflakes is discussed. Brunauer–Emmett–Teller (BET) analysis were performed to investigate the porous structure and surface area of the as-obtained nanoflakes

  16. An anisotropic tertiary creep damage constitutive model for anisotropic materials

    International Nuclear Information System (INIS)

    Stewart, Calvin M.; Gordon, Ali P.; Ma, Young Wha; Neu, Richard W.

    2011-01-01

    When an anisotropic material is subject to creep conditions and a complex state of stress, an anisotropic creep damage behavior is observed. Previous research has focused on the anisotropic creep damage behavior of isotropic materials but few constitutive models have been developed for anisotropic creeping solids. This paper describes the development of a new anisotropic tertiary creep damage constitutive model for anisotropic materials. An advanced tensorial damage formulation is implemented which includes both material orientation relative to loading and the degree of creep damage anisotropy in the model. A variation of the Norton-power law for secondary creep is implemented which includes the Hill's anisotropic analogy. Experiments are conducted on the directionally-solidified bucket material DS GTD-111. The constitutive model is implemented in a user programmable feature (UPF) in ANSYS FEA software. The ability of the constitutive model to regress to the Kachanov-Rabotnov isotropic tertiary creep damage model is demonstrated through comparison with uniaxial experiments. A parametric study of both material orientation and stress rotation are conducted. Results indicate that creep deformation is modeled accurately; however an improved damage evolution law may be necessary. - Highlights: → The deformation of anisotropic creeping solid is directionally dependent. → Few constitutive models have been developed to deal with anisotropic behavior. → A transversely-isotropic nickel base superalloy, DS GTD-111, is studied. → A vector constitutive model based on the Kachanov-Rabotnov formulation is developed. → The new model accurately models deformation at various orientations.

  17. Closeout of Advanced Boron and Metal Loaded High Porosity Carbons.

    Energy Technology Data Exchange (ETDEWEB)

    Peter C. Eklund (deceased); T. C. Mike Chung; Henry C. Foley; Vincent H. Crespi

    2011-05-01

    The Penn State effort explored the development of new high-surface-area materials for hydrogen storage, materials that could offer enhancement in the hydrogen binding energy through a direct chemical modification of the framework in high specific-surface-area platforms. The team chemically substituted boron into the hexagonal sp2 carbon framework, dispersed metal atoms bound to the boro-carbon structure, and generated the theory of novel nanoscale geometries that can enhance storage through chemical frustration, sheet curvature, electron deficiency, large local fields and mixed hybridization states. New boro-carbon materials were synthesized by high temperature plasma, pyrolysis of boron-carbon precursor molecules, and post-synthesis modification of carbons. Hydrogen uptake has been assessed, and several promising leads have been identified, with the requirement to simultaneously optimize total surface area while maintaining the enhanced hydrogen binding energies already demonstrated.

  18. Tuning the optical response in carbon doped boron nitride nanodots

    KAUST Repository

    Mokkath, Junais Habeeb

    2014-09-04

    Time dependent density functional theory and the hybrid B3LYP functional are used to investigate the structural and optical properties of pristine and carbon doped hexagonal boron nitride nanodots. In agreement with recent experiments, the embedded carbon atoms are found to favor nucleation. Our results demonstrate that carbon clusters of different shapes promote an early onset of absorption by generating in-gap states. The nanodots are interesting for opto-electronics due to their tunable optical response in a wide energy window. We identify cluster sizes and shapes with optimal conversion efficiency for solar radiation and a wide absorption range form infrared to ultraviolet. This journal is

  19. Material Induced Anisotropic Damage in DP600

    NARCIS (Netherlands)

    Niazi, Muhammad Sohail; Wisselink, H.H.; Meinders, Vincent T.; van den Boogaard, Antonius H.

    2013-01-01

    Plasticity induced damage development in metals is anisotropic by nature. The anisotropy in damage is driven by two different phenomena; anisotropic deformation state i.e. Load Induced Anisotropic Damage (LIAD) and anisotropic microstructure i.e. Material Induced Anisotropic Damage (MIAD). The

  20. Anisotropic Concrete Compressive Strength

    DEFF Research Database (Denmark)

    Gustenhoff Hansen, Søren; Jørgensen, Henrik Brøner; Hoang, Linh Cao

    2017-01-01

    When the load carrying capacity of existing concrete structures is (re-)assessed it is often based on compressive strength of cores drilled out from the structure. Existing studies show that the core compressive strength is anisotropic; i.e. it depends on whether the cores are drilled parallel...... correlation to the curing time. The experiments show no correlation between the anisotropy and the curing time and a small strength difference between the two drilling directions. The literature shows variations on which drilling direction that is strongest. Based on a Monto Carlo simulation of the expected...

  1. Theoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructure

    Directory of Open Access Journals (Sweden)

    Jia-Tao Sun

    2012-09-01

    graphene and hexagonal boron nitride (C-BN nanostructures receive much research interest due to the complementary electronic properties. Graphene is a zero-gap semiconductor, while hexagonal boron nitride (h-BN is a wide gap semiconductor. Here we studied the electronic structures and carrier transport of hybrid C-BN nanostructures by using first principles calculations and deformation potential theory. We have found that the physical quantities in these systems under study, band gap, effective mass, deformation potential, and carrier mobility, can be categorised into three different families depending on the width of graphene nanoribbon. This family behavior is similar to pristine armchair graphene nanoribbon, but with slight difference from the individual component. New opportunities of designing nanoelectric devices are discussed by utilizing the quantum confinement effect based on such kind of hybrid nanostructures.

  2. Boronated liposome development and evaluation

    International Nuclear Information System (INIS)

    Hawthorne, M.F.

    1995-01-01

    The boronated liposome development and evaluation effort consists of two separate tasks. The first is the development of new boron compounds and the synthesis of known boron species with BNCT potential. These compounds are then encapsulated within liposomes for the second task, biodistribution testing in tumor-bearing mice, which examines the potential for the liposomes and their contents to concentrate boron in cancerous tissues

  3. Inner Phases of Colloidal Hexagonal Spin Ice

    Science.gov (United States)

    Libál, A.; Nisoli, C.; Reichhardt, C. J. O.; Reichhardt, C.

    2018-01-01

    Using numerical simulations that mimic recent experiments on hexagonal colloidal ice, we show that colloidal hexagonal artificial spin ice exhibits an inner phase within its ice state that has not been observed previously. Under increasing colloid-colloid repulsion, the initially paramagnetic system crosses into a disordered ice regime, then forms a topologically charge ordered state with disordered colloids, and finally reaches a threefold degenerate, ordered ferromagnetic state. This is reminiscent of, yet distinct from, the inner phases of the magnetic kagome spin ice analog. The difference in the inner phases of the two systems is explained by their difference in energetics and frustration.

  4. Pin-wheel hexagons: a model for anthraquinone ordering on Cu(111).

    Science.gov (United States)

    Simenas, M; Tornau, E E

    2013-10-21

    The 4-state model of anthraquinone molecules ordering in a pin-wheel large-pore honeycomb phase on Cu(111) is proposed and solved by Monte Carlo simulation. The model is defined on a rescaled triangular lattice with the lattice constant a being equal to intermolecular distance in the honeycomb phase. The pin-wheel triangle formations are obtained taking into account the elongated shape of the molecules and anisotropic interactions for main two attractive short range (double and single dimeric) H-bond interactions. The long-range intermolecular interactions, corresponding to repulsive dipole-dipole forces, are assumed to be isotropic. Also, a very small (compared to short-range forces) isotropic attractive long-range interaction at the "characteristic" distance of a pore diameter is employed, and its effect carefully studied. This interaction is crucial for a formation of closed porous ordered systems, pin-wheel hexagons in particular. If each side of a pin-wheel hexagon is formed of n parallel molecules, the distance of this characteristic interaction is a√(3n(2)+1). The phase diagrams including different pin-wheel hexagon phases and a variety of other ordered structures are obtained. By changing the distance of characteristic interaction, different ordering routes into the experimental pin-wheel honeycomb phase are explored. The results obtained imply that classical explanation of the origin of the pin-wheel honeycomb phase in terms of some balance of attractive and repulsive forces cannot be totally discounted yet.

  5. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    mental phase contrast images and the diffraction pattern. Figure 3. (a) Bright field image of electrodeposited boron spec- imen showing a crystallite of size ∼10 × 5 nm; (b) phase contrast image of electrodeposited boron specimen showing a resolved la- ttice and (c) power spectrum of electrodeposited boron specimen.

  6. First-principles study on the structural, cohesive and electronic properties of rhombohedral Mo2B5 as compared with hexagonal MoB2

    International Nuclear Information System (INIS)

    Shein, I.R.; Shein, K.I.; Ivanovskii, A.L.

    2007-01-01

    The full-potential linearized augmented plane wave method using the generalized gradient approximation (FLAPW-GGA) has been applied to provide comparison and contrast for Mo borides with various structural types: rhombohedral Mo 2 B 5 versus hexagonal MoB 2 . The equilibrium lattice parameters, energies of formations, total and partial densities of states, electronic density distributions and the theoretical shapes of boron K-edge X-ray emission spectra are obtained and compared to available data

  7. Enrichment of boron 10

    International Nuclear Information System (INIS)

    Coutinho, C.M.M.; Rodrigues Filho, J.S.R.; Umeda, K.; Echternacht, M.V.

    1990-01-01

    A isotopic separation pilot plant with five ion exchange columns interconnected in series were designed and built in the IEN. The columns are charged with a strong anionic resin in its alkaline form. The boric acid solution is introduced in the separation columns until it reaches a absorbing zone length which is sufficient to obtain the desired boron-10 isotopic concentration. The boric acid absorbing zone movement is provided by the injection of a diluted hydrochloric acid solution, which replace the boric acid throughout the columns. The absorbing zone equilibrium length is proportional to its total length. The enriched boron-10 and the depleted boron are located in the final boundary and in the initial position of the absorbing zones, respectively. (author)

  8. Transient anisotropic magnetic field calculation

    International Nuclear Information System (INIS)

    Jesenik, Marko; Gorican, Viktor; Trlep, Mladen; Hamler, Anton; Stumberger, Bojan

    2006-01-01

    For anisotropic magnetic material, nonlinear magnetic characteristics of the material are described with magnetization curves for different magnetization directions. The paper presents transient finite element calculation of the magnetic field in the anisotropic magnetic material based on the measured magnetization curves for different magnetization directions. For the verification of the calculation method some results of the calculation are compared with the measurement

  9. In Vivo Boron Uptake Determination for Boron Neutron Capture Synovectomy

    Energy Technology Data Exchange (ETDEWEB)

    Binello, Emanuela; Shortkroff, Sonya; Yanch, Jacquelyn C.

    1999-06-06

    Boron neutron capture synovectomy (BNCS) has been proposed as a new application of the boron neutron capture reaction for the treatment of rheumatoid arthritis. In BNCS, a boron compound is injected into the joint space, where it is taken up by the synovium. The joint is then irradiated with neutrons of a desired energy range, inducing the boron neutron capture reaction in boron-loaded cells. Boron uptake by the synovium is an important parameter in the assessment of the potential of BNCS and in the determination of whether to proceed to animal irradiations for the testing of therapeutic efficacy. We present results from an investigation of boron uptake in vivo by the synovium.

  10. Hexagonal metal modifications and thin film ferromagnetism

    NARCIS (Netherlands)

    Hueger, E.; Wormeester, Herbert; Bauer, E.

    1999-01-01

    Epitaxial strain-stabilized hexagonal modifications can occur in many metal films grown on (100) surfaces of cubic crystals and can have a strong influence on their magnetic properties. The necessary conditions for the formation of hcp crystals, identification criteria, examples and implications for

  11. Anisotropic corner diffusion as origin for dendritic growth on hexagonal substrates

    DEFF Research Database (Denmark)

    Brune, H.; Röder, H.; Bromann, K.

    1996-01-01

    and stick mechanism, form. Dendrites are characterized by preferential growth in the [2]-directions, i.e., perpendicular to A-steps. The key process for their formation has been found to be diffusion of one-fold comer atoms towards neighboring steps. Calculations with the effective medium...

  12. Thermodynamics of anisotropic branes

    Energy Technology Data Exchange (ETDEWEB)

    Ávila, Daniel [Departamento de Física, Facultad de Ciencias, Universidad Nacional Autónoma de México, A.P. 70-542, México D.F. 04510 (Mexico); Fernández, Daniel [Max-Planck-Institut für Physik,Föhringer Ring 6, 80805 München (Germany); Patiño, Leonardo [Departamento de Física, Facultad de Ciencias, Universidad Nacional Autónoma de México, A.P. 70-542, México D.F. 04510 (Mexico); Trancanelli, Diego [Institute of Physics, University of São Paulo,05314-970 São Paulo (Brazil)

    2016-11-22

    We study the thermodynamics of flavor D7-branes embedded in an anisotropic black brane solution of type IIB supergravity. The flavor branes undergo a phase transition between a ‘Minkowski embedding’, in which they lie outside of the horizon, and a ‘black hole embedding’, in which they fall into the horizon. This transition depends on the black hole temperature, its degree of anisotropy, and the mass of the flavor degrees of freedom. It happens either at a critical temperature or at a critical anisotropy. A general lesson we learn from this analysis is that the anisotropy, in this particular realization, induces similar effects as the temperature. In particular, increasing the anisotropy bends the branes more and more into the horizon. Moreover, we observe that the transition becomes smoother for higher anisotropies.

  13. Anisotropic Rabi model

    Directory of Open Access Journals (Sweden)

    Qiong-Tao Xie

    2014-06-01

    Full Text Available We define the anisotropic Rabi model as the generalization of the spin-boson Rabi model: The Hamiltonian system breaks the parity symmetry; the rotating and counterrotating interactions are governed by two different coupling constants; a further parameter introduces a phase factor in the counterrotating terms. The exact energy spectrum and eigenstates of the generalized model are worked out. The solution is obtained as an elaboration of a recently proposed method for the isotropic limit of the model. In this way, we provide a long-sought solution of a cascade of models with immediate relevance in different physical fields, including (i quantum optics, a two-level atom in single-mode cross-electric and magnetic fields; (ii solid-state physics, electrons in semiconductors with Rashba and Dresselhaus spin-orbit coupling; and (iii mesoscopic physics, Josephson-junction flux-qubit quantum circuits.

  14. Single photon emitters in boron nitride: More than a supplementary material

    Science.gov (United States)

    Koperski, M.; Nogajewski, K.; Potemski, M.

    2018-03-01

    We present comprehensive optical studies of recently discovered single photon sources in boron nitride, which appear in form of narrow lines emitting centres. Here, we aim to compactly characterise their basic optical properties, including the demonstration of several novel findings, in order to inspire discussion about their origin and utility. Initial inspection reveals the presence of narrow emission lines in boron nitride powder and exfoliated flakes of hexagonal boron nitride deposited on Si/SiO2 substrates. Generally rather stable, the boron nitride emitters constitute a good quality visible light source. However, as briefly discussed, certain specimens reveal a peculiar type of blinking effects, which are likely related to existence of meta-stable electronic states. More advanced characterisation of representative stable emitting centres uncovers a strong dependence of the emission intensity on the energy and polarisation of excitation. On this basis, we speculate that rather strict excitation selectivity is an important factor determining the character of the emission spectra, which allows the observation of single and well-isolated emitters. Finally, we investigate the properties of the emitting centres in varying external conditions. Quite surprisingly, it is found that the application of a magnetic field introduces no change in the emission spectra of boron nitride emitters. Further analysis of the impact of temperature on the emission spectra and the features seen in second-order correlation functions is used to provide an assessment of the potential functionality of boron nitride emitters as single photon sources capable of room temperature operation.

  15. Process for microwave sintering boron carbide

    Science.gov (United States)

    Holcombe, C.E.; Morrow, M.S.

    1993-10-12

    A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy.

  16. Bright prospects for boron

    NARCIS (Netherlands)

    Nanver, L.; Wassink, J.

    2012-01-01

    Professor Lis Nanver at Dimes has laid the foundation for a range of new photodetectors by creating a thin coating of boron on a silicon substrate. The sensors are used in ASML’s latest lithography machines and FEI’s most sensitive electron microscopes.

  17. Methods of producing continuous boron carbide fibers

    Science.gov (United States)

    Garnier, John E.; Griffith, George W.

    2015-12-01

    Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

  18. Theoretical investigation of calcium-decorated β12 boron sheet for hydrogen storage

    Science.gov (United States)

    Tang, Xiao; Gu, Yuantong; Kou, Liangzhi

    2018-03-01

    From first-principles calculations based on density functional theory, we find that the recently synthesized β12 boron sheet is a perfect candidate for calcium-decoration and hydrogen storage application. In contrast to graphene where defects are required to capture Ca, the naturally formed hexagonal hollow ring in β12 boron sheet provides the ideal site for Ca adsorption, and up to 6H2 molecules for each Ca atom can be captured with a desirable binding energy of ∼0.2 eV/H2. The gravimetric hydrogen density for Ca decorated boron sheet can reach up to 8.92 wt%. From the electronic analysis, it is found that both the orbital hybridizations and polarization mechanism play significant roles in H2 adsorption and storage.

  19. Effect of boron doping on optical properties of sol–gel based nanostructured zinc oxide films on glass

    International Nuclear Information System (INIS)

    Jana, Sunirmal; Vuk, Angela Surca; Mallick, Aparajita; Orel, Boris; Biswas, Prasanta Kumar

    2011-01-01

    Graphical abstract: Room temperature fine structured UV–vis PL emissions (a) as phonon replicas in 1 at.% boron doped film originated from LO phonon evidenced from Near Grazing Incidence Angle (NGIA) IR spectral study (b). Highlights: ► Sol–gel based boron doped nanostructured ZnO thin films deposited on pure silica glass using crystalline boric acid as boron source. ► Observed first time, room temperature fine structured PL emissions in 1 at.% doped film as phonon replicas originated from LO phonon (both IR and Raman active). ► Boron doping controls the LO phonon energy in addition to visible reflection, band gap and grain size. ► The films possessed mixed crystal phases with hexagonal as major phase. -- Abstract: Boron doped zinc oxide thin films (∼80 nm) were deposited onto pure silica glass by sol–gel dip coating technique from the precursor sol/solution of 4.0 wt.% equivalent oxide content. The boron concentration was varied from 0 to 2 at.% w.r.t. Zn using crystalline boric acid. The nanostructured feature of the films was visualized by FESEM images and the largest cluster size of ZnO was found in 1 at.% boron doped film (B1ZO). The presence of mixed crystal phases with hexagonal as major phase was identified from XRD reflections of the films. Particle size, optical band gap, visible specular reflection, room temperature photoluminescence (PL) emissions (3.24–2.28 eV), infra-red (IR) and Raman active longitudinal optical (LO) phonon vibration were found to be dependent on dopant concentration. For the first time, we report the room temperature fine structured PL emissions as phonon replicas originated from the LO phonon (both IR and Raman active) in 1 at.% boron doped zinc oxide film.

  20. Ferroelectricity in the multiferroic hexagonal manganites

    OpenAIRE

    Lilienblum, Martin; Lottermoser, Thomas; Manz, Sebastian; Selbach, Sverre Magnus; Cano, Andres; Fiebig, Manfred

    2015-01-01

    Since their discovery in 1963 the hexagonal manganites have consolidated their role as exotic ferroelectrics with astonishing functionalities. Their introduction as room-temperature device ferroelectrics was followed by observations of giant flexoelectricity, multiferroicity with magnetoelectric domain and domain-wall coupling, protected vortex domain structures, topological domain-scaling behaviour and domain walls with tunable conductance and magnetism. Even after half a century, however, t...

  1. Disadvantage factor for anisotropic scattering

    International Nuclear Information System (INIS)

    Saad, E.A.; Abdel Krim, M.S.; EL-Dimerdash, A.A.

    1990-01-01

    The invariant embedding method is used to solve the problem for a two region reactor with anisotropic scattering and to compute the disadvantage factor necessary for calculating some reactor parameters

  2. Photon states in anisotropic media

    Indian Academy of Sciences (India)

    Abstract. Quantum aspects of optical polarization are discussed for waves traveling in anisotropic dielectric media with a view to relate the dynamics of polarization with that of photon spin and its manipulation by classical polarizers.

  3. Structures, stability, mechanical and electronic properties of α-boron and α*-boron

    OpenAIRE

    Chaoyu He; J. X. Zhong

    2013-01-01

    The structures, stability, mechanical and electronic properties of α-boron and a promising metastable boron phase (α*-boron) have been studied by first-principles calculations. α-boron and α*-boron consist of equivalent icosahedra B12 clusters in different connecting configurations of “3S-6D-3S” and “2S-6D-4S”, respectively. The total energy calculations show that α*-boron is less stable than α-boron but more favorable than the well-known β-boron and γ-boron at zero pressure. Both α-boron and...

  4. Anisotropic nonequilibrium hydrodynamic attractor

    Science.gov (United States)

    Strickland, Michael; Noronha, Jorge; Denicol, Gabriel S.

    2018-02-01

    We determine the dynamical attractors associated with anisotropic hydrodynamics (aHydro) and the DNMR equations for a 0 +1 d conformal system using kinetic theory in the relaxation time approximation. We compare our results to the nonequilibrium attractor obtained from the exact solution of the 0 +1 d conformal Boltzmann equation, the Navier-Stokes theory, and the second-order Mueller-Israel-Stewart theory. We demonstrate that the aHydro attractor equation resums an infinite number of terms in the inverse Reynolds number. The resulting resummed aHydro attractor possesses a positive longitudinal-to-transverse pressure ratio and is virtually indistinguishable from the exact attractor. This suggests that an optimized hydrodynamic treatment of kinetic theory involves a resummation not only in gradients (Knudsen number) but also in the inverse Reynolds number. We also demonstrate that the DNMR result provides a better approximation of the exact kinetic theory attractor than the Mueller-Israel-Stewart theory. Finally, we introduce a new method for obtaining approximate aHydro equations which relies solely on an expansion in the inverse Reynolds number. We then carry this expansion out to the third order, and compare these third-order results to the exact kinetic theory solution.

  5. Anisotropic Exchange Interaction in the Conical Magnetic Phase of Erbium

    DEFF Research Database (Denmark)

    Jensen, J.

    1974-01-01

    From a general two ion spin Hamiltonian, an expression is deduced for the energies of spin waves propagating in a hexagonal solid in which the magnetic moments are ordered in a conical or helical structure. The spin wave dispersion relation in the c direction of Er in its conical magnetic phase...... at 4.5K, which has been studied by Nicklow et al (1971) is reanalysed. In this analysis an alternative kind of anisotropic coupling between the total angular moments (Ji and Jj) on the sites i and j is introduced which is proportional to the following combination of Racah operators: O2, -2(Ji), O2, -2......(Jj), expressed with respect to a coordinate system with the z axis along the c direction. The resulting anisotropy (both the constant and the q dependent part) is reduced by an order of magnitude in comparison with that deduced by Nicklow et al (1971). The constant anisotropy is found to be equal...

  6. Fivefold twinned boron carbide nanowires.

    Science.gov (United States)

    Fu, Xin; Jiang, Jun; Liu, Chao; Yuan, Jun

    2009-09-09

    Chemical composition and crystal structure of fivefold twinned boron carbide nanowires have been determined by electron energy-loss spectroscopy and electron diffraction. The fivefold cyclic twinning relationship is confirmed by systematic axial rotation electron diffraction. Detailed chemical analysis reveals a carbon-rich boron carbide phase. Such boron carbide nanowires are potentially interesting because of their intrinsic hardness and high temperature thermoelectric property. Together with other boron-rich compounds, they may form a set of multiply twinned nanowire systems where the misfit strain could be continuously tuned to influence their mechanical properties.

  7. Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures

    OpenAIRE

    Kang, Seok Ju; Lee, Gwan-Hyoung; Yu, Young-Jun; Zhao, Yue; Kim, Bumjung; Watanabe, Kenji; Taniguchi, Takashi; Hone, James; Kim, Philip; Nuckolls, Colin

    2014-01-01

    Enhancing the device performance of single crystal organic field effect transistors (OFETs) requires both optimized engineering of efficient injection of the carriers through the contact and improvement of the dielectric interface for reduction of traps and scattering centers. Since the accumulation and flow of charge carriers in operating organic FETs takes place in the first few layers of the semiconductor next to the dielectric, the mobility can be easily degraded by surface roughness, cha...

  8. Self-assembled diacetylene molecular wire polymerization on an insulating hexagonal boron nitride (0001) surface

    Czech Academy of Sciences Publication Activity Database

    Makarova, Marina; Okawa, Y.; Verveniotis, E.; Watanabe, K.; Taniguchi, T.; Joachim, Ch.; Aono, M.

    2016-01-01

    Roč. 27, č. 39 (2016), 1-8, č. článku 395303. ISSN 0957-4484 Institutional support: RVO:68378271 Keywords : molecular self-assembly * insulating substrate * molecular electronics * polydiacetylene Subject RIV: BJ - Thermodynamics Impact factor: 3.440, year: 2016

  9. Two-level quenching of photoluminescence in hexagonal boron nitride micropowder

    Energy Technology Data Exchange (ETDEWEB)

    Henaish, A. M. A. [Ural Federal University, NANOTECH Center, Mira Street, 19, Yekaterinburg, Russia, 620002 (Russian Federation); Tanta University, Physics Department, Tanta, Egypt, 31527 (Egypt); Vokhmintsev, A. S.; Weinstein, I. A., E-mail: i.a.weinstein@urfu.ru [Ural Federal University, NANOTECH Center, Mira Street, 19, Yekaterinburg, Russia, 620002 (Russian Federation)

    2016-03-29

    The processes of photoluminescence thermal quenching in the range RT – 800 K of h-BN micropowder in the 3.56 eV band were studied. It was found that two non-radiative channels of excitations relaxation with activation energies of 0.27 and 0.81 eV control the quenching for emission observed. It was assumed that emptying the shallow traps based on O{sub N}-centers characterized external quenching in RT – 530 K range and non-radiative mechanism of donor-acceptor recombination began to dominate at T > 530 K.

  10. CVD growth of graphene under exfoliated hexagonal boron nitride for vertical hybrid structures

    International Nuclear Information System (INIS)

    Wang, Min; Jang, Sung Kyu; Song, Young Jae; Lee, Sungjoo

    2015-01-01

    Graphical abstract: We have demonstrated a novel yet simple method for fabricating graphene-based vertical hybrid structures by performing the CVD growth of graphene at an h-BN/Cu interface. Our systematic Raman measurements combined with plasma etching process indicate that a graphene film is grown under exfoliated h-BN rather than on its top surface, and that an h-BN/graphene vertical hybrid structure has been fabricated. Electrical transport measurements of this h-BN/graphene, transferred on SiO2, show the carrier mobility up to approximately 2250 cm 2 V −1 s −1 . The developed method would enable the exploration of the possibility of novel hybrid structure integration with two-dimensional material systems. - Abstract: We have demonstrated a novel yet simple method for fabricating graphene-based vertical hybrid structures by performing the CVD growth of graphene at an h-BN/Cu interface. Our systematic Raman measurements combined with plasma etching process indicate that a graphene film is grown under exfoliated h-BN rather than on its top surface, and that an h-BN/graphene vertical hybrid structure has been fabricated. Electrical transport measurements of this h-BN/graphene, transferred on SiO 2 , show the carrier mobility up to approximately 2250 cm 2 V −1 s −1 . The developed method would enable the exploration of the possibility of novel hybrid structure integration with two-dimensional material systems

  11. The growth and characterization of silicene, germanene and hexagonal boron nitride

    NARCIS (Netherlands)

    Acun, Adil

    2017-01-01

    The discovery of graphene inspired the exploration of other 2D-materials. Silicon and germanium are elements with similar features as carbon. This lead to the fabrication of graphene's cousins, silicene and germanene, with similar properties as graphene. Notable differences are found in the

  12. Structural Characterization of Atomically Thin Hexagonal Boron Nitride via Raman Spectroscopy

    Science.gov (United States)

    2014-03-27

    utilized for this study were grown by AFRL/RY via metal oxide chemical vapor deposition ( MOCVD ) in a cold-walled reactor at 900 °C on a copper catalyst...two-dimensional materials with an emphasis on h-BN 22 and the growth MOCVD method utilized for producing atomically thin h-BN. Key...hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and

  13. Redetermination of the hexagonal struvite analogue Cs[Mg(OH26](PO4

    Directory of Open Access Journals (Sweden)

    Matthias Weil

    2008-08-01

    Full Text Available The structure of the hexagonal modification of caesium hexaaquamagnesium phosphate has been redetermined from single-crystal X-ray data. The previous refinement from photographic data [Ferrari, Calvaca & Nardelli (1955. Gazz. Chim. Ital. 85, 1232–1238] was basically confirmed, but with all H atoms located and with all non H-atoms refined with anisotropic displacement parameters. The structure can be derived from the NiAs structure type: the PO4 tetrahedra (3m. symmetry are on the Ni positions and the complex [Mg(OH26] octahedra (3m. symmetry are on the As positions. The building units are connected to each other by hydrogen bonds. The Cs+ cations (3m. symmetry are located in the voids of this arrangement and exhibit a distorted cuboctahedral 12-coordination by the O atoms of the water molecules.

  14. First-principles calculations on double-walled inorganic nanotubes with hexagonal chiralities

    Energy Technology Data Exchange (ETDEWEB)

    Zhukovskii, Yuri F [Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063, Riga (Latvia); Evarestov, Robert A; Bandura, Andrei V; Losev, Maxim V, E-mail: quantzh@latnet.lv [Department of Quantum Chemistry, St. Petersburg State University, 26 Universitetsky Ave., 198504, Petrodvorets (Russian Federation)

    2011-06-23

    The two sets of commensurate double-walled boron nitride and titania hexagonally-structured nanotubes (DW BN and TiO{sub 2} NTs) possessing either armchair- or zigzag-type chiralities have been considered, i.e., (n{sub 1},n{sub 1})-(n{sub 2},n{sub 2}) or (n{sub 1},0)-(n{sub 2},0), respectively. For symmetry analysis of these nanotubes, the line symmetry groups for one-periodic (1D) nanostructures with rotohelical symmetry have been applied. To analyze the structural and electronic properties of hexagonal DW NTs, a series of large-scale ab initio DFT-LCAO calculations have been performed using the hybrid Hartree-Fock/Kohn-Sham exchange-correlation functional PBE0 (as implemented in CRYSTAL-09 code). To establish the optimal inter-shell distances within DW NTs corresponding to the minima of calculated total energy, the chiral indices n{sub 1} and n{sub 2} of the constituent single-walled (SW) nanotubes have been successively varied.

  15. The reconstructed edges of the hexagonal BN

    Science.gov (United States)

    Zhao, Ruiqi; Gao, Junfeng; Liu, Zhongfan; Ding, Feng

    2015-05-01

    As an important two-dimensional material which shows exceptional mechanical and chemical stability, superior electronic properties, along with broad applications, the hexagonal-BN (h-BN) has drawn great attention recently. Here we report a systematic study on the structural stability, electronic and magnetic properties of various h-BN edges, including both bare and hydrogen-terminated ones. It is found that along the armchair (AC) direction, the pristine edge is the most stable one because of the formation of a triple B\\z.tbd N bond, while, along the zigzag (ZZ) directions, the reconstructed ones, ZZB + N and ZZN57 are more stable. The pristine edges are more stable in bare BN in most cases if saturated with hydrogen. By applying the theory of Wulff construction, we predicted that an unpassivated BN domain prefers the hexagonal shape enclosed with bare AC edges i.e., AC-Ns, AC, AC-Bs if the feedstock varies from N-rich to B-rich. However, the evolution from ZZN edged triangular domain, to hexagonal domain enclosed with AC edges, and ZZB edged triangle may occur if the edges are terminated by hydrogen atoms. Further calculation shows that these edges present rich type-dependent properties and thus are important for various applications. This theoretical study showed that controlling the morphologies of BN domains and BN edges is crucial for various applications.As an important two-dimensional material which shows exceptional mechanical and chemical stability, superior electronic properties, along with broad applications, the hexagonal-BN (h-BN) has drawn great attention recently. Here we report a systematic study on the structural stability, electronic and magnetic properties of various h-BN edges, including both bare and hydrogen-terminated ones. It is found that along the armchair (AC) direction, the pristine edge is the most stable one because of the formation of a triple B\\z.tbd N bond, while, along the zigzag (ZZ) directions, the reconstructed ones, ZZB + N

  16. Graphene nanoribbons epitaxy on boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Xiaobo; Wang, Shuopei; Wu, Shuang; Chen, Peng; Zhang, Jing; Zhao, Jing; Meng, Jianling; Xie, Guibai; Wang, Duoming; Wang, Guole; Zhang, Ting Ting; Yang, Rong; Shi, Dongxia [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yang, Wei [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités Pierre et Marie Curie and Paris-Diderot, 24 rue Lhomond, 75231 Paris Cedex 05 (France); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Zhang, Guangyu, E-mail: gyzhang@aphy.iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2016-03-14

    In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm{sup 2} V{sup −1} s{sup −1} for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

  17. Diagonal form factors and hexagon form factors

    International Nuclear Information System (INIS)

    Jiang, Yunfeng; Petrovskii, Andrei

    2016-01-01

    We study the heavy-heavy-light (HHL) three-point functions in the planar N=4 super-Yang-Mills theory using the recently proposed hexagon bootstrap program http://arxiv.org/abs/1505.06745. We prove the conjecture of Bajnok, Janik and Wereszczynski http://dx.doi.org/10.1007/JHEP09(2014)050 on the polynomial L-dependence of HHL structure constant up to the leading finite-size corrections, where L is the length of the heavy operators. The proof is presented for a specific set-up but the method can be applied to more general situations.

  18. Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

    Energy Technology Data Exchange (ETDEWEB)

    Darwish, Ahmed A. [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Nuclear and Radiation Engineering, Faculty of Engineering, Alexandria University, Alexandria (Egypt); Fadlallah, Mohamed M. [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Physics, Faculty of Science, Benha University, Benha (Egypt); Badawi, Ashraf [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Maarouf, Ahmed A., E-mail: ahmed.maarouf@egnc.gov.eg [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Egypt Nanotechnology Center & Department of Physics, Faculty of Science, Cairo University, Giza 12613 (Egypt)

    2016-07-30

    Highlights: • Doping boron nitride sheets with aluminum or gallium atoms significantly enhances their molecular adsorption properties. • Adsorption of glucose or glucosamine on Al- and Ga-doped boron nitride sheets changes the band gap. • Doping concentration changes the bad gap, but has a minor effect on the adsorption energy. - Abstract: Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  19. Acetylene chain reaction on hydrogenated boron nitride monolayers: a density functional theory study.

    Science.gov (United States)

    Ponce-Pérez, R; Cocoletzi, Gregorio H; Takeuchi, Noboru

    2017-11-28

    Spin-polarized first-principles total-energy calculations have been performed to investigate the possible chain reaction of acetylene molecules mediated by hydrogen abstraction on hydrogenated hexagonal boron nitride monolayers. Calculations have been done within the periodic density functional theory (DFT), employing the PBE exchange correlation potential, with van der Waals corrections (vdW-DF). Reactions at two different sites have been considered: hydrogen vacancies on top of boron and on top of nitrogen atoms. As previously calculated, at the intermediate state of the reaction, when the acetylene molecule is attached to the surface, the adsorption energy is of the order of -0.82 eV and -0.20 eV (measured with respect to the energy of the non interacting molecule-substrate system) for adsorption on top of boron and nitrogen atoms, respectively. After the hydrogen abstraction takes place, the system gains additional energy, resulting in adsorption energies of -1.52 eV and -1.30 eV, respectively. These results suggest that the chain reaction is energetically favorable. The calculated minimum energy path (MEP) for hydrogen abstraction shows very small energy barriers of the order of 5 meV and 22 meV for the reaction on top of boron and nitrogen atoms, respectively. Finally, the density of states (DOS) evolution study helps to understand the chain reaction mechanism. Graphical abstract Acetylene chain reaction on hydrogenated boron nitride monolayers.

  20. Magnetism of single-vacancy defects in graphene and boron-nitride nanoflakes

    Science.gov (United States)

    Fernandez-Sabido, Silvia; Ramos, Carlos; Cifuentes-Quintal, Eduardo; de Coss, Romeo

    2012-02-01

    In this work we have used the hexagonal zigzag graphene and boron-nitride nanoflakes as a simple systems for studying the new class of magnetic materials obtained by structural vacancies in nonmagnetic s-p nanostructures. We have shown that for these systems, it is possible to predict the total spin moment from a electron counting analysis. Employing DFT calculations based on the LCAO approximation and the Fixed Spin Moment method, we have determinate the ground state spin multiplicity and the spin magnetic distribution for these structures. We have found that the ground state multiplicity of graphene nanoflakes is triplet, corresponding to a spin magnetic moment of M=2μβ. Analyzing the spin orbital distribution we have determinate that the spin-polarized for the graphene nanoflakes is equally distributed in the sp^2 and pz orbitals. For the boron-nitride nanoflakes we have obtained a quartet state (M=3μβ) in the case of a boron vacancy, and a doublet state (M=1μβ) for a nitrogen vacancy. We have found that for the boron-vacancy the spin-polarized is mainly localized on the sp^2 orbitals of nitrogen atoms. In contrast, for the nitrogen-vacancy the spin-polarized is concentrated at the pz orbitals of boron atoms.

  1. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Raman spectroscopic examination was carried out to study the nature of bonding and the allotropic form of boron obtained after electrodeposition. The results obtained from transmission electron microscopy showed the presence of nanocrystallites embedded in an amorphous mass of boron. Raman microscopic studies ...

  2. Continuum mechanics of anisotropic materials

    CERN Document Server

    Cowin, Stephen C

    2013-01-01

    Continuum Mechanics of Anisotropic Materials(CMAM) presents an entirely new and unique development of material anisotropy in the context of an appropriate selection and organization of continuum mechanics topics. These features will distinguish this continuum mechanics book from other books on this subject. Textbooks on continuum mechanics are widely employed in engineering education, however, none of them deal specifically with anisotropy in materials. For the audience of Biomedical, Chemical and Civil Engineering students, these materials will be dealt with more frequently and greater accuracy in their analysis will be desired. Continuum Mechanics of Anisotropic Materials' author has been a leader in the field of developing new approaches for the understanding of anisotropic materials.

  3. Ferroelectricity in the multiferroic hexagonal manganites

    Science.gov (United States)

    Lilienblum, Martin; Lottermoser, Thomas; Manz, Sebastian; Selbach, Sverre M.; Cano, Andres; Fiebig, Manfred

    2015-12-01

    Since their discovery in 1963 the hexagonal manganites have consolidated their role as exotic ferroelectrics with astonishing functionalities. Their introduction as room-temperature device ferroelectrics was followed by observations of giant flexoelectricity, multiferroicity with magnetoelectric domain and domain-wall coupling, protected vortex domain structures, topological domain-scaling behaviour and domain walls with tunable conductance and magnetism. Even after half a century, however, the emergence of the ferroelectric state has remained the subject of fierce debate. We resolve the interplay of electric polarization, topological trimerization and temperature by direct access to the polarization for temperatures up to 1,400 K. Nonlinear optical experiments and piezoresponse force microscopy, complemented by Monte Carlo simulations, reveal a single phase transition with ferroelectricity determined by topology rather than electrostatics. Fundamental properties of the hexagonal manganites, including an explanation for the two-phase-transition controversy as a finite-size scaling effect, are derived from this and highlight why improper ferroelectrics are an inherent source of novel functionalities.

  4. Dirac cones in isogonal hexagonal metallic structures

    Science.gov (United States)

    Wang, Kang

    2018-03-01

    A honeycomb hexagonal metallic lattice is equivalent to a triangular atomic one and cannot create Dirac cones in its electromagnetic wave spectrum. We study in this work the low-frequency electromagnetic band structures in isogonal hexagonal metallic lattices that are directly related to the honeycomb one and show that such structures can create Dirac cones. The band formation can be described by a tight-binding model that allows investigating, in terms of correlations between local resonance modes, the condition for the Dirac cones and the consequence of the third structure tile sustaining an extra resonance mode in the unit cell that induces band shifts and thus nonlinear deformation of the Dirac cones following the wave vectors departing from the Dirac points. We show further that, under structure deformation, the deformations of the Dirac cones result from two different correlation mechanisms, both reinforced by the lattice's metallic nature, which directly affects the resonance mode correlations. The isogonal structures provide new degrees of freedom for tuning the Dirac cones, allowing adjustment of the cone shape by modulating the structure tiles at the local scale without modifying the lattice periodicity and symmetry.

  5. Functionalized boron nitride nanotubes

    Science.gov (United States)

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

    2014-04-22

    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  6. Boron Activated Neutron Thermometer

    Energy Technology Data Exchange (ETDEWEB)

    Lapsley, A. C. [Argonne National Lab. (ANL), Argonne, IL (United States). Instrument Research & Development

    1952-01-09

    The Brown Instrument Division of Minneapolis-Honeywell Regulator Co. have been making pilot models of boron coated neutron sensitive thermopiles, which show considerable promise of being effective indicators of slow neutron flux. Their loss in sensitivity in a year of operation in the maximum flux of CP-6 calculates to be less than 6 per cent. When used as rooftop indicators, the ratio of the signal of the two units would change by about 2 per cent in a year's time.

  7. Boron atom reactions

    International Nuclear Information System (INIS)

    Estes, R.; Tabacco, M.B.; Digiuseppe, T.G.; Davidovits, P.

    1982-01-01

    The reaction rates of atomic boron with various epoxides have been measured in a flow tube apparatus. The bimolecular rate constants, in units of cm 3 molecule -1 s -1 , are: 1,2-epoxypropane (8.6 x 10 -11 ), 1,2-epoxybutane (8.8 x 10 -11 ), 1,2,3,4-diepoxybutane (5.5 x 10 -11 ), 1-chloro-2,3-epoxypropane (5.7 x 10 -11 ), and 1,2-epoxy-3,3,3-trichloropropane (1.5 x 10 -11 ). (orig.)

  8. Anisotropic hydrodynamics: Motivation and methodology

    Energy Technology Data Exchange (ETDEWEB)

    Strickland, Michael

    2014-06-15

    In this proceedings contribution I review recent progress in our understanding of the bulk dynamics of relativistic systems that possess potentially large local rest frame momentum-space anisotropies. In order to deal with these momentum-space anisotropies, a reorganization of relativistic viscous hydrodynamics can be made around an anisotropic background, and the resulting dynamical framework has been dubbed “anisotropic hydrodynamics”. I also discuss expectations for the degree of momentum-space anisotropy of the quark–gluon plasma generated in relativistic heavy ion collisions at RHIC and LHC from second-order viscous hydrodynamics, strong-coupling approaches, and weak-coupling approaches.

  9. Synthesis characterization and catalytic action of hexagonal gold nanoparticles using essential oils extracted from Anacardium occidentale.

    Science.gov (United States)

    Sheny, D S; Mathew, Joseph; Philip, Daizy

    2012-11-01

    A new phytochemical method for the synthesis of gold nanoparticles is reported. The essential oils extracted from the fresh leaves of Anacardium occidentale are used for the reduction of auric acid to Au nanoparticles (NPs). The formation and morphology of synthesized NPs are investigated with the help of UV-visible, TEM and FTIR spectroscopy. The NPs synthesized at room temperature are mono-dispersed and hexagonal in shape with an average size of 36 nm while those prepared at higher temperature are composed of a mixture of anisotropic particles. The UV-visible absorption spectra of these anisotropic NPs show asymmetry in the longer wavelength side. The quantity of oil is an important criterion modulating the shape of NPs. Possible biochemical mechanism leading to the formation of NPs is studied using FTIR spectroscopy. The potential of synthesized Au NPs as catalyst is explored for the hydrogenation of p-nitro phenol to p-amino phenol at room temperature. Copyright © 2012 Elsevier B.V. All rights reserved.

  10. Magnetic properties of hexagonal barium ferrite films on Pt/MgO(111) substrates annealed at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Hui [National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054 (China); Han, Mangui, E-mail: han_mangui@yahoo.com [National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, Liang; Deng, Jiangxia; Zheng, Peng [Institute of Electron Device & Application, Hangzhou Dianzi University, Hangzhou 310008 (China); Wu, Qiong [Magnetism Key Laboratory of Zhejiang Province, China Jiliang University, Hangzhou 310018 (China); Deng, Longjiang [National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054 (China); Qin, Huibin [Institute of Electron Device & Application, Hangzhou Dianzi University, Hangzhou 310008 (China)

    2016-09-01

    In this work, hexagonal barium ferrite thin films have been deposited on Pt/MgO(111) substrates by pulsed laser deposition. The anneal temperature dependence of crystal structures, extents of diffusion and magnetic properties have been studied. X-ray diffraction patterns reveal that the crystal structure changes from the hexagonal to the spinel when the anneal temperature increases. The texture with c-axis perpendicular to the film plane and the small c-axis dispersion angles (△θ{sub c}) have been obtained in the film annealed at 950 °C for 10 h. Both the X-ray photoelectron spectroscopy profiles and energy dispersive spectrometer show that the diffusions of Mg{sup 2+}and Fe{sup 3+}cations are more obvious when the annealing temperature is higher than 950 °C. The film annealed at 950 °C show anisotropic and hard magnetic properties. The magnetic properties of film annealed at 1050 °C are soft. - Highlights: • Obvious cation diffusions between the films and substrates are observed by XPS measurements. • Hexagonal ferrites gradually transform into spinel ferrites when the annealing temperatures increase. • Ba-M thin films with the c-axis of grains perpendicular to the film plane have been obtained.

  11. Thermophoretically driven water droplets on graphene and boron nitride surfaces

    Science.gov (United States)

    Rajegowda, Rakesh; Kannam, Sridhar Kumar; Hartkamp, Remco; Sathian, Sarith P.

    2018-05-01

    We investigate thermally driven water droplet transport on graphene and hexagonal boron nitride (h-BN) surfaces using molecular dynamics simulations. The two surfaces considered here have different wettabilities with a significant difference in the mode of droplet transport. The water droplet travels along a straighter path on the h-BN sheet than on graphene. The h-BN surface produced a higher driving force on the droplet than the graphene surface. The water droplet is found to move faster on h-BN surface compared to graphene surface. The instantaneous contact angle was monitored as a measure of droplet deformation during thermal transport. The characteristics of the droplet motion on both surfaces is determined through the moment scaling spectrum. The water droplet on h-BN surface showed the attributes of the super-diffusive process, whereas it was sub-diffusive on the graphene surface.

  12. Biaxial Compressive Strain Engineering in Graphene/Boron Nitride Heterostructures

    Science.gov (United States)

    Pan, Wei; Xiao, Jianliang; Zhu, Junwei; Yu, Chenxi; Zhang, Gang; Ni, Zhenhua; Watanabe, K.; Taniguchi, T.; Shi, Yi; Wang, Xinran

    2012-11-01

    Strain engineered graphene has been predicted to show many interesting physics and device applications. Here we study biaxial compressive strain in graphene/hexagonal boron nitride heterostructures after thermal cycling to high temperatures likely due to their thermal expansion coefficient mismatch. The appearance of sub-micron self-supporting bubbles indicates that the strain is spatially inhomogeneous. Finite element modeling suggests that the strain is concentrated on the edges with regular nano-scale wrinkles, which could be a playground for strain engineering in graphene. Raman spectroscopy and mapping is employed to quantitatively probe the magnitude and distribution of strain. From the temperature-dependent shifts of Raman G and 2D peaks, we estimate the TEC of graphene from room temperature to above 1000K for the first time.

  13. Magnetic relaxation in anisotropic magnets

    DEFF Research Database (Denmark)

    Lindgård, Per-Anker

    1971-01-01

    The line shape and the kinematic and thermodynamic slowing down of the critical and paramagnetic relaxation in axially anisotropic materials are discussed. Kinematic slowing down occurs only in the longitudinal relaxation function. The thermodynamic slowing down occurs in either the transverse...

  14. Failure in imperfect anisotropic materials

    DEFF Research Database (Denmark)

    Legarth, Brian Nyvang

    2005-01-01

    The fundamental cause of crack growth, namely nucleation and growth of voids, is investigated numerically for a two phase imperfect anisotropic material. A unit cell approach is adopted from which the overall stress strain is evaluated. Failure is observed as a sudden stress drop and depending...

  15. Boron isotopes and groundwater pollution

    International Nuclear Information System (INIS)

    Vengosh, A.

    1999-01-01

    Boron can be used as a tracer in ground water because of its high solubility in aqueous solutions, natural abundance in all waters, and the lack of effects by evaporation, volatilisation, oxidation-reduction reactions. Since the boron concentrations in pristine ground waters are generally low and contaminant sources are usually enriched in boron, the δ 11 B of groundwater is highly sensitive to the impact of contamination. The large isotopic variations of the potential sources can be used to trace the origin of the contamination and to reconstruct mixing and flow paths

  16. Lattice dynamics of α boron and of boron carbide

    International Nuclear Information System (INIS)

    Vast, N.

    1999-01-01

    The atomic structure and the lattice dynamics of α boron and of B 4 C boron carbide have been studied by Density Functional Theory (D.F.T.) and Density Functional Perturbation Theory (D.F.P.T.). The bulk moduli of the unit-cell and of the icosahedron have been investigated, and the equation of state at zero temperature has been determined. In α boron, Raman diffusion and infrared absorption have been studied under pressure, and the theoretical and experimental Grueneisen coefficients have been compared. In boron carbide, inspection of the theoretical and experimental vibrational spectra has led to the determination of the atomic structure of B 4 C. Finally, the effects of isotopic disorder have been modeled by an exact method beyond the mean-field approximation, and the effects onto the Raman lines has been investigated. The method has been applied to isotopic alloys of diamond and germanium. (author)

  17. Permeation of Light Gases through Hexagonal Ice

    Directory of Open Access Journals (Sweden)

    Luis Gales

    2012-09-01

    Full Text Available Gas separation using porous solids have attracted great attention due to their energetic applications. There is an enormous economic and environmental interest in the development of improved technologies for relevant processes, such as H2 production, CO2 separation or O2 and N2 purification from air. New materials are needed for achieving major improvements. Crystalline materials, displaying unidirectional and single-sized pores, preferentially with low pore tortuosity and high pore density, are promising candidates for membrane synthesis. Herein, we study hexagonal ice crystals as an example of this class of materials. By slowly growing ice crystals inside capillary tubes we were able to measure the permeation of several gas species through ice crystals and investigate its relation with both the size of the guest molecules and temperature of the crystal.

  18. A new and effective approach to boron removal by using novel boron-specific fungi isolated from boron mining wastewater.

    Science.gov (United States)

    Taştan, Burcu Ertit; Çakir, Dilara Nur; Dönmez, Gönül

    2016-01-01

    Boron-resistant fungi were isolated from the wastewater of a boron mine in Turkey. Boron removal efficiencies of Penicillium crustosum and Rhodotorula mucilaginosa were detected in different media compositions. Minimal Salt Medium (MSM) and two different waste media containing molasses (WM-1) or whey + molasses (WM-2) were tested to make this process cost effective when scaled up. Both isolates achieved high boron removal yields at the highest boron concentrations tested in MSM and WM-1. The maximum boron removal yield by P. crustosum was 45.68% at 33.95 mg l(-1) initial boron concentration in MSM, and was 38.97% at 42.76 mg l(-1) boron for R. mucilaginosa, which seemed to offer an economically feasible method of removing boron from the effluents.

  19. Structural domain walls in polar hexagonal manganites

    Science.gov (United States)

    Kumagai, Yu

    2014-03-01

    The domain structure in the multiferroic hexagonal manganites is currently intensely investigated, motivated by the observation of intriguing sixfold topological defects at their meeting points [Choi, T. et al,. Nature Mater. 9, 253 (2010).] and nanoscale electrical conductivity at the domain walls [Wu, W. et al., Phys. Rev. Lett. 108, 077203 (2012).; Meier, D. et al., Nature Mater. 11, 284 (2012).], as well as reports of coupling between ferroelectricity, magnetism and structural antiphase domains [Geng, Y. et al., Nano Lett. 12, 6055 (2012).]. The detailed structure of the domain walls, as well as the origin of such couplings, however, was previously not fully understood. In the present study, we have used first-principles density functional theory to calculate the structure and properties of the low-energy structural domain walls in the hexagonal manganites [Kumagai, Y. and Spaldin, N. A., Nature Commun. 4, 1540 (2013).]. We find that the lowest energy domain walls are atomically sharp, with {210}orientation, explaining the orientation of recently observed stripe domains and suggesting their topological protection [Chae, S. C. et al., Phys. Rev. Lett. 108, 167603 (2012).]. We also explain why ferroelectric domain walls are always simultaneously antiphase walls, propose a mechanism for ferroelectric switching through domain-wall motion, and suggest an atomistic structure for the cores of the sixfold topological defects. This work was supported by ETH Zurich, the European Research Council FP7 Advanced Grants program me (grant number 291151), the JSPS Postdoctoral Fellowships for Research Abroad, and the MEXT Elements Strategy Initiative to Form Core Research Center TIES.

  20. Nothing Boring About Boron

    Science.gov (United States)

    Pizzorno, Lara

    2015-01-01

    The trace mineral boron is a micronutrient with diverse and vitally important roles in metabolism that render it necessary for plant, animal, and human health, and as recent research suggests, possibly for the evolution of life on Earth. As the current article shows, boron has been proven to be an important trace mineral because it (1) is essential for the growth and maintenance of bone; (2) greatly improves wound healing; (3) beneficially impacts the body’s use of estrogen, testosterone, and vitamin D; (4) boosts magnesium absorption; (5) reduces levels of inflammatory biomarkers, such as high-sensitivity C-reactive protein (hs-CRP) and tumor necrosis factor α (TNF-α); (6) raises levels of antioxidant enzymes, such as superoxide dismutase (SOD), catalase, and glutathione peroxidase; (7) protects against pesticide-induced oxidative stress and heavy-metal toxicity; (8) improves the brains electrical activity, cognitive performance, and short-term memory for elders; (9) influences the formation and activity of key biomolecules, such as S-adenosyl methionine (SAM-e) and nicotinamide adenine dinucleotide (NAD+); (10) has demonstrated preventive and therapeutic effects in a number of cancers, such as prostate, cervical, and lung cancers, and multiple and non-Hodgkin’s lymphoma; and (11) may help ameliorate the adverse effects of traditional chemotherapeutic agents. In none of the numerous studies conducted to date, however, do boron’s beneficial effects appear at intakes > 3 mg/d. No estimated average requirements (EARs) or dietary reference intakes (DRIs) have been set for boron—only an upper intake level (UL) of 20 mg/d for individuals aged ≥ 18 y. The absence of studies showing harm in conjunction with the substantial number of articles showing benefits support the consideration of boron supplementation of 3 mg/d for any individual who is consuming a diet lacking in fruits and vegetables or who is at risk for or has osteopenia; osteoporosis

  1. Metal interactions with boron clusters

    International Nuclear Information System (INIS)

    Grimes, R.N.

    1982-01-01

    This book presents information on the following topics: the structural and bonding features of metallaboranes and metallacarboranes; transition-metal derivatives of nido-boranes and some related species; interactions of metal groups with the octahydrotriborate (1-) anion, B 3 H 8 ; metallaboron cage compounds of the main group metals; closo-carborane-metal complexes containing metal-carbon and metal-boron omega-bonds; electrochemistry of metallaboron cage compounds; and boron clusters with transition metal-hydrogen bonds

  2. Boron diffusion in silicon devices

    Science.gov (United States)

    Rohatgi, Ajeet; Kim, Dong Seop; Nakayashiki, Kenta; Rounsaville, Brian

    2010-09-07

    Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.

  3. Nature of Bonding in Bowl-Like B36 Cluster Revisited. Concentric (6 pi Plus 18 pi) Double Aromaticity and Reason for the Preference of Hexagonal Hole in Central Location.

    Science.gov (United States)

    Zhai, Hua-Jin; Li, Rui; You, Xue-Rui; Wang, Kang

    2018-03-07

    Bowl-shaped C6v B36 cluster with a central hexagon hole is considered an ideal molecular model for low-dimensional boron-based nanosystems. Owing to electron-deficiency of boron, chemical bonding in B36 cluster is intriguing and complicated and has remained elusive despite a couple of papers in literature. Herein we shall offer an in-depth bonding analysis via canonical molecular orbitals (CMOs) and adaptive natural density partitioning (AdNDP), further aided with natural bond orbital (NBO) analysis and orbital composition calculations. The concerted computational data establish the idea of concentric double pi aromaticity for B36 cluster, with inner 6 pi and outer 18 pi electron-counting, which both conform to the (4n + 2) Hückel rule. The updated bonding picture differs from existing knowledge of the system. A refined bonding model is also proposed for coronene, of which B36 cluster is an inorganic analogue. It is further shown that concentric double pi aromaticity in B36 cluster is retained and spatially fixed, irrespective of migration of the hexagonal hole; the latter process varies the system energetically. Hexagonal hole is found to be a destabilization factor for sigma/pi CMOs. The central hexagon hole affects substantially fewer CMOs, thus making bowl-shaped C6v B36 cluster the global minimum. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Toward Edge-Defined Holey Boron Nitride Nanosheets

    Science.gov (United States)

    Lin, Yi; Liao, Yunlong; Chen, Zhongfan; Connell, John W.

    2015-01-01

    "Holey" two-dimensional (2D) nanosheets with well-defined holy morphology and edge chemistry are highly desirable for applications such as energy storage, catalysis, sensing, transistors, and molecular transport/separation. For example, holey grapheme is currently under extensive investigation for energy storage applications because of the improvement in ion transport due to through the thickness pathways provided by the holes. Without the holes, the 2D materials have significant limitations for such applications in which efficient ion transport is important. As part of an effort to apply this approach to other 2D nanomaterials, a method to etch geometrically defined pits or holes on the basal plane surface of hexagonal boron nitride (h-BN) nanosheets has been developed. The etching, conducted via heating in ambient air using metal nanoparticles as catalysts, was facile, controllable, and scalable. Starting h-BN layered crystals were etched and subsequently exfoliated into boron nitride nanosheets (BNNSs). The as-etched and exfoliated h-BN nanosheets possessed defined pit and hole shapes that were comprised of regulated nanostructures at the edges. The current finding are the first step toward the bulk preparation of holey BNNSs with defined holes and edges.

  5. Boron Fullerenes: A First-Principles Study

    Directory of Open Access Journals (Sweden)

    Gonzalez Szwacki Nevill

    2007-01-01

    Full Text Available AbstractA family of unusually stable boron cages was identified and examined using first-principles local-density functional method. The structure of the fullerenes is similar to that of the B12icosahedron and consists of six crossing double-rings. The energetically most stable fullerene is made up of 180 boron atoms. A connection between the fullerene family and its precursors, boron sheets, is made. We show that the most stable boron sheets are not necessarily precursors of very stable boron cages. Our finding is a step forward in the understanding of the structure of the recently produced boron nanotubes.

  6. Controlling the microstructure and properties of wire arc additive manufactured Ti–6Al–4V with trace boron additions

    International Nuclear Information System (INIS)

    Bermingham, M.J.; Kent, D.; Zhan, H.; StJohn, D.H.; Dargusch, M.S.

    2015-01-01

    This study demonstrates that trace boron addition to Ti–6Al–4V coupons produced by additive layer manufacturing is an effective way to eliminate the deleterious anisotropic microstructures often encountered with this manufacturing technique. Trace boron additions (up to 0.13 wt.%) to this alloy eliminate grain boundary-α and colony-α, and instead produce a homogeneous α-microstructure consisting of fine equiaxed α-grains in both as-deposited and heat treated coupons. Prior-β grains remain columnar with boron addition but become narrower due to the wider solidification range and growth restricting effect of the boron solute. Compared to unmodified Ti–6Al–4V alloy, Ti–6Al–4V modified with trace boron additions showed up to 40% improvement in plasticity with no loss in strength under uniaxial compression at room temperature. Boron additions were found to inhibit twinning transmission that causes sudden large load drops during deformation of the unmodified Ti–6Al–4V alloy in the heat treated condition

  7. The mechanical design of hybrid graphene/boron nitride nanotransistors: Geometry and interface effects

    Science.gov (United States)

    Einalipour Eshkalak, Kasra; Sadeghzadeh, Sadegh; Jalaly, Maisam

    2018-02-01

    From electronic point of view, graphene resembles a metal or semi-metal and boron nitride is a dielectric material (band gap = 5.9 eV). Hybridization of these two materials opens band gap of the graphene which has expansive applications in field-effect graphene transistors. In this paper, the effect of the interface structure on the mechanical properties of a hybrid graphene/boron nitride was studied. Young's modulus, fracture strain and tensile strength of the models were simulated. Three likely types (hexagonal, octagonal and decagonal) were found for the interface of hybrid sheet after relaxation. Although Csbnd B bonds at the interface were indicated to result in more promising electrical properties, nitrogen atoms are better choice for bonding to carbon for mechanical applications.

  8. Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride.

    Science.gov (United States)

    Chen, Chunlin; Wang, Zhongchang; Kato, Takeharu; Shibata, Naoya; Taniguchi, Takashi; Ikuhara, Yuichi

    2015-02-17

    Diamond and cubic boron nitride (c-BN) are the top two hardest materials on the Earth. Clarifying how the two seemingly incompressible materials can actually join represents one of the most challenging issues in materials science. Here we apply the temperature gradient method to grow the c-BN single crystals on diamond and report a successful epitaxial growth. By transmission electron microscopy, we reveal a novel misfit accommodation mechanism for a {111} diamond/c-BN heterointerface, that is, lattice misfit can be accommodated by continuous stacking fault networks, which are connected by periodically arranged hexagonal dislocation loops. The loops are found to comprise six 60° Shockley partial dislocations. Atomically, the carbon in diamond bonds directly to boron in c-BN at the interface, which electronically induces a two-dimensional electron gas and a quasi-1D electrical conductivity. Our findings point to the existence of a novel misfit accommodation mechanism associated with the superhard materials.

  9. Metafluid with anisotropic dynamic mass

    International Nuclear Information System (INIS)

    Gumen, L.N.; Arriaga, J.; Krokhin, A.A.

    2011-01-01

    We show that a fluid filling the space between metallic cylinders arranged in a two-dimensional lattice exhibits anisotropic dynamic mass for sound waves propagating through the lattice, if its unit cell is anisotropic. Using the plane-waves expansion method we derive (in the long wavelength limit) a formula for the effective mass tensor of the metafluid. The proposed formula is very general - it is valid for arbitrary Bravais lattices and arbitrary filling fractions of the cylinders. We apply our method to a periodic structure with very high anisotropy, when other known methods fail. In particular, we calculate the effective mass tensor for sound waves in air with embedded lattice of aluminum cylinders having rectangular cross sections, and obtain excellent agreement with experiment. The proposed method of calculation may find numerous applications for tailoring of metafluids with prescribed anisotropy.

  10. Anisotropic Ripple Deformation in Phosphorene.

    Science.gov (United States)

    Kou, Liangzhi; Ma, Yandong; Smith, Sean C; Chen, Changfeng

    2015-05-07

    Two-dimensional materials tend to become crumpled according to the Mermin-Wagner theorem, and the resulting ripple deformation may significantly influence electronic properties as observed in graphene and MoS2. Here, we unveil by first-principles calculations a new, highly anisotropic ripple pattern in phosphorene, a monolayer black phosphorus, where compression-induced ripple deformation occurs only along the zigzag direction in the strain range up to 10%, but not the armchair direction. This direction-selective ripple deformation mode in phosphorene stems from its puckered structure with coupled hinge-like bonding configurations and the resulting anisotropic Poisson ratio. We also construct an analytical model using classical elasticity theory for ripple deformation in phosphorene under arbitrary strain. The present results offer new insights into the mechanisms governing the structural and electronic properties of phosphorene crucial to its device applications.

  11. Exact anisotropic polytropic cylindrical solutions

    Science.gov (United States)

    Sharif, M.; Sadiq, Sobia

    2018-03-01

    In this paper, we study anisotropic compact stars with static cylindrically symmetric anisotropic matter distribution satisfying polytropic equation of state. We formulate the field equations as well as the corresponding mass function for the particular form of gravitational potential z(x)=(1+bx)^{η } (η =1, 2, 3) and explore exact solutions of the field equations for different values of the polytropic index. The values of arbitrary constants are determined by taking mass and radius of compact star (Her X-1). We find that resulting solutions show viable behavior of physical parameters (density, radial as well as tangential pressure, anisotropy) and satisfy the stability condition. It is concluded that physically acceptable solutions exist only for η =1, 2.

  12. Ab Initio Investigations of Thermoelectric Effects in Graphene – Boron Nitride Nanoribbons

    Directory of Open Access Journals (Sweden)

    Visan Camelia

    2016-01-01

    Full Text Available Thermoelectric effects of graphene – hexagonal boron nitride (hBN nanoribbons have been investigated by density functional theory (DFT calculations. Pristine zig-zag nanoribbons are not suited to achieve high thermopower as the transmission function is flat around the chemical potential. By introducing hBN inclusions, the nanoribbon systems exhibit enhanced thermopower, due to the asymmetries introduced in the spin dependent transmission functions. Finite temperature differences between the two contacts are considered. The possibility of a good integration of hBN into graphene, makes the hybrid systems suitable for thermoelectric applications, which may be subject to further optimizations.

  13. The atomic and electronic structure of nitrogen- and boron-doped phosphorene.

    Science.gov (United States)

    Boukhvalov, Danil W

    2015-10-28

    First principles modeling of nitrogen- and boron-doped phosphorene demonstrates the tendency toward the formation of highly ordered structures. Nitrogen doping leads to the formation of -N-P-P-P-N- lines. Further transformation into -P-N-P-N- lines across the chains of phosphorene occurs with increasing band gap and increasing nitrogen concentration, which coincides with the decreasing chemical activity of N-doped phosphorene. In contrast to the case of nitrogen, boron atoms prefer to form -B-B- pairs with the further formation of -P-P-B-B-P-P- patterns along the phosphorene chains. The low concentration of boron dopants converts the phosphorene from a semiconductor into a semimetal with the simultaneous enhancement of its chemical activity. Co-doping of phosphorene by both boron and nitrogen starts from the formation of -B-N- pairs, which provides flat bands and further transformation of these pairs into hexagonal BN lines and ribbons across the phosphorene chains.

  14. Study the Postbuckling of Hexagonal Piezoelectric Nanowires with Surface Effect

    Directory of Open Access Journals (Sweden)

    O. Rahmani

    2014-04-01

    Full Text Available Piezoelectric nanobeams having circular, rectangular and hexagonal cross-sections are synthesized and used in various Nano structures; however, piezoelectric nanobeams with hexagonal cross-sections have not been studied in detail. In particular, the physical mechanisms of the surface effect and the role of surface stress, surface elasticity and surface piezoelectricity have not been discussed thoroughly. The present study investigated post-buckling behavior of piezoelectric nanobeams by examining surface effects. The energy method was applied to post-buckling of hexagonal nanobeams and the critical buckling voltage and amplitude are derived analytically from bulk and surface material properties and geometric factors.

  15. Nylon flocked swab severely reduces Hexagon Obti sensibility.

    Science.gov (United States)

    Frippiat, Christophe; De Roy, Gilbert; Fontaine, Louis-Marie; Dognaux, Sophie; Noel, Fabrice; Heudt, Laeticia; Lepot, Laurent

    2015-02-01

    Hexagon Obti immunological blood test and flocked swab are widely used in forensic laboratories. Nevertheless, up to now, no compatibility tests have been published between sampling with the ethylene oxide treated flocked swab and the Hexagon Obti blood detection strip. In this study, we investigated this compatibility. Our work shows that sampling with ethylene oxide treated flocked swab reduces by a factor of at least 100 the detection threshold of blood using the Hexagon Obti immunological test. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

  16. Mathematical Foundation for Plane Covering Using Hexagons

    Science.gov (United States)

    Johnson, Gordon G.

    1999-01-01

    This work is to indicate the development and mathematical underpinnings of the algorithms previously developed for covering the plane and the addressing of the elements of the covering. The algorithms are of interest in that they provides a simple systematic way of increasing or decreasing resolution, in the sense that if we have the covering in place and there is an image superimposed upon the covering, then we may view the image in a rough form or in a very detailed form with minimal effort. Such ability allows for quick searches of crude forms to determine a class in which to make a detailed search. In addition, the addressing algorithms provide an efficient way to process large data sets that have related subsets. The algorithms produced were based in part upon the work of D. Lucas "A Multiplication in N Space" which suggested a set of three vectors, any two of which would serve as a bases for the plane and also that the hexagon is the natural geometric object to be used in a covering with a suggested bases. The second portion is a refinement of the eyeball vision system, the globular viewer.

  17. Bootstrapping the Three-Loop Hexagon

    Energy Technology Data Exchange (ETDEWEB)

    Dixon, Lance J.; /CERN /SLAC; Drummond, James M.; /CERN /Annecy, LAPTH; Henn, Johannes M.; /Humboldt U., Berlin /Santa Barbara, KITP

    2011-11-08

    We consider the hexagonal Wilson loop dual to the six-point MHV amplitude in planar N = 4 super Yang-Mills theory. We apply constraints from the operator product expansion in the near-collinear limit to the symbol of the remainder function at three loops. Using these constraints, and assuming a natural ansatz for the symbol's entries, we determine the symbol up to just two undetermined constants. In the multi-Regge limit, both constants drop out from the symbol, enabling us to make a non-trivial confirmation of the BFKL prediction for the leading-log approximation. This result provides a strong consistency check of both our ansatz for the symbol and the duality between Wilson loops and MHV amplitudes. Furthermore, we predict the form of the full three-loop remainder function in the multi-Regge limit, beyond the leading-log approximation, up to a few constants representing terms not detected by the symbol. Our results confirm an all-loop prediction for the real part of the remainder function in multi-Regge 3 {yields} 3 scattering. In the multi-Regge limit, our result for the remainder function can be expressed entirely in terms of classical polylogarithms. For generic six-point kinematics other functions are required.

  18. Future boronated molecules for neutron capture therapy

    International Nuclear Information System (INIS)

    Soloway, A.H.; Alam, F.; Barth, R.F.

    1986-01-01

    The ability of several boron compounds to localize in tumor cells is examined. A number of first and second generation compounds which were not synthesized specifically for localization are described. Among these are the boron hydrides and boranes. A third generation of boron compounds are designed for selective localization. These fall into two groups: relatively small organic compounds and boronated antibodies, both of which are discussed here

  19. Compression and Associated Properties of Boron Carbide

    Science.gov (United States)

    2008-12-01

    Klandadze, G.I., and Eristavi, A.M., 1999: IR- Active Phonons and Structure Elements of Isotope - Enriched Boron Carbide, J. Sol. State Chem. 154, 79- 86...COMPRESSION AND ASSOCIATED PROPERTIES OF BORON CARBIDE D. P. Dandekar*and J. A. Ciezak Army Research Laboratory, APG, MD 21005 M. Somayazulu...of the observed loss of shear strength in boron carbide under plane shock wave compression to amorphization in boron carbide under triaxial stress

  20. Lattice vibrations in α-boron

    International Nuclear Information System (INIS)

    Richter, W.

    1976-01-01

    α-rhombohedral boron is the simplest boron modification, with only 12 atoms per unit cell. The boron atoms are arranged in B 12 icosahedra, which are centered at the lattice points of a primitive rhombohedral lattice. The icosahedra are slightly deformed, as the five-fold symmetry of the ideal icosahedron is incompatible with any crystal structure. The lattice dynamics of α-boron are discussed in terms of the model developed by Weber and Thorpe. (Auth.)

  1. Synthesis of oligomeric boron-containing phospolyols

    International Nuclear Information System (INIS)

    Bondarenko, S.N.; Khokhlova, T.V.; Orlova, S.A.; Tuzhikov, O.I.

    2006-01-01

    Structure is investigated and reactivity of oligomeric boron-containing phospolyols is studied. Oligomeric boron-containing compound interacts with ethylene glycol, diethylene glycol, glycerol, 1,4-butandiol with formation of linear boron-containing phospolyols. Reactions proceed in noncatalytic conditions with stoichiometric quantities of reagents at 170-200 Deg C in inert gas media. Boron-containing phospolyols are viscous uncolored liquids, their physicochemical characteristics are represented [ru

  2. Bifurcation theory for hexagonal agglomeration in economic geography

    CERN Document Server

    Ikeda, Kiyohiro

    2014-01-01

    This book contributes to an understanding of how bifurcation theory adapts to the analysis of economic geography. It is easily accessible not only to mathematicians and economists, but also to upper-level undergraduate and graduate students who are interested in nonlinear mathematics. The self-organization of hexagonal agglomeration patterns of industrial regions was first predicted by the central place theory in economic geography based on investigations of southern Germany. The emergence of hexagonal agglomeration in economic geography models was envisaged by Krugman. In this book, after a brief introduction of central place theory and new economic geography, the missing link between them is discovered by elucidating the mechanism of the evolution of bifurcating hexagonal patterns. Pattern formation by such bifurcation is a well-studied topic in nonlinear mathematics, and group-theoretic bifurcation analysis is a well-developed theoretical tool. A finite hexagonal lattice is used to express uniformly distri...

  3. Structures, stability, mechanical and electronic properties of a-boron and its twined brother a*-boron

    OpenAIRE

    He, Chaoyu; Zhong, Jianxin

    2013-01-01

    The structures, stability, mechanical and electronic properties of a-boron and its twined brother a*-boron have been studied by first-principles calculations. Both a-boron and a*-boron consist of equivalent icosahedra B12 clusters in different connecting configurations of "3S-6D-3S" and "2S-6D-4S", respectively. The total energy calculations show that a*-boron is less stable than a-boron but more favorable than beta-boron and Gamma-boron at zero pressure. Both a-boron and a*-boron are confirm...

  4. Quantitative TEM analysis of a hexagonal mesoporous silicate structure.

    Science.gov (United States)

    Hudson, S; Tanner, D A; Redington, W; Magner, E; Hodnett, K; Nakahara, S

    2006-08-07

    TEM analysis of mesoporous materials is generally undertaken to give qualitative results. Accurate quantitative analysis is demonstrated in this study. A systematic image analysis of a powder form of a hexagonal mesoporous material known as KIT-6 is conducted using a transmission electron microscope (TEM). Three types of image contrast typically appear in this material (a hexagonal honeycomb structure, wide and narrow parallel lines). The honeycomb face is used to characterise this material in terms of a conventional 2-D hexagonal structure and the d-spacings for the (100) and (110) planes are experimentally measured in varying focus conditions. A tilting experiment is conducted to determine how the angle of tilt affects the line spacing and their visibility. Tilting has very little effect on the line spacing, whereas it affects the visibility of both the wide and narrow lines by limiting an angle range of visibility. The hexagonal lattice structure parameter determined by TEM method is found to be approximately 7% lower than that calculated by low-angle X-ray diffraction. Thus we conclude that TEM data can be used to determine the geometry and dimensions of hexagonal mesoporous silica materials, with a small error in the hexagonal lattice parameter.

  5. Anisotropic and nonlinear optical waveguides

    CERN Document Server

    Someda, CG

    1992-01-01

    Dielectric optical waveguides have been investigated for more than two decades. In the last ten years they have had the unique position of being simultaneously the backbone of a very practical and fully developed technology, as well as an extremely exciting area of basic, forefront research. Existing waveguides can be divided into two sets: one consisting of waveguides which are already in practical use, and the second of those which are still at the laboratory stage of their evolution. This book is divided into two separate parts: the first dealing with anisotropic waveguides, an

  6. Boron steel. I Part. Preparation

    International Nuclear Information System (INIS)

    Jaraiz Franco, E.; Esteban Hernandez, J. A.

    1960-01-01

    With the advent of the first nuclear reactors arise the need for control rods and shielding duties for some types of radiations. One of the materials used for this purpose has been the high boron steel. This paper describes the melting and casting procedures employed for the production, at laboratory scale, of steels with Boron content ranging from 1 to 4 per cent, as well as the metallographic and X-Ray techniques used for the identification of the present phases. The electrolytic technique employed for the isolation of the Fe 2 B phase and its subsequent X-Ray identification has proved to be satisfactory. (Author) 11 refs

  7. Thermal conductivity of boron carbides

    Science.gov (United States)

    Wood, C.; Emin, D.; Gray, P. E.

    1985-01-01

    Knowledge of the thermal conductivity of boron carbide is necessary to evaluate its potential for high-temperature thermoelectric energy conversion applications. Measurements have been conducted of the thermal diffusivity of hot-pressed boron carbide BxC samples as a function of composition (x in the range from 4 to 9), temperature (300-1700 K), and temperature cycling. These data, in concert with density and specific-heat data, yield the thermal conductivities of these materials. The results are discussed in terms of a structural model that has been previously advanced to explain the electronic transport data. Some novel mechanisms for thermal conduction are briefly discussed.

  8. New Icosahedral Boron Carbide Semiconductors

    Science.gov (United States)

    Echeverria Mora, Elena Maria

    Novel semiconductor boron carbide films and boron carbide films doped with aromatic compounds have been investigated and characterized. Most of these semiconductors were formed by plasma enhanced chemical vapor deposition. The aromatic compound additives used, in this thesis, were pyridine (Py), aniline, and diaminobenzene (DAB). As one of the key parameters for semiconducting device functionality is the metal contact and, therefore, the chemical interactions or band bending that may occur at the metal/semiconductor interface, X-ray photoemission spectroscopy has been used to investigate the interaction of gold (Au) with these novel boron carbide-based semiconductors. Both n- and p-type films have been tested and pure boron carbide devices are compared to those containing aromatic compounds. The results show that boron carbide seems to behave differently from other semiconductors, opening a way for new analysis and approaches in device's functionality. By studying the electrical and optical properties of these films, it has been found that samples containing the aromatic compound exhibit an improvement in the electron-hole separation and charge extraction, as well as a decrease in the band gap. The hole carrier lifetimes for each sample were extracted from the capacitance-voltage, C(V), and current-voltage, I(V), curves. Additionally, devices, with boron carbide with the addition of pyridine, exhibited better collection of neutron capture generated pulses at ZERO applied bias, compared to the pure boron carbide samples. This is consistent with the longer carrier lifetimes estimated for these films. The I-V curves, as a function of external magnetic field, of the pure boron carbide films and films containing DAB demonstrate that significant room temperature negative magneto-resistance (> 100% for pure samples, and > 50% for samples containing DAB) is possible in the resulting dielectric thin films. Inclusion of DAB is not essential for significant negative magneto

  9. Chemical separation of boron isotopes

    International Nuclear Information System (INIS)

    Palko, A.A.

    1978-06-01

    This is the final report of the research performed at ORNL on the chemical fractionation of boron isotopes between BF 3 gas and the liquid molecular addition compounds of BF 3 . Thirty compounds were studied, ten of them in detail. Graphs and equations are given for variation of isotopic equilibrium constant, vapor pressure, and BF 3 solubility as a function of temperature. Rate of isotopic exchange and melting points were determined. Several of the compounds are likely candidates for use in a gas-liquid countercurrent exchange system for large-scale separation of boron isotopes. 23 figs, 53 tables, 39 references

  10. Chemical separation of boron isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Palko, A.A.

    1978-06-01

    This is the final report of the research performed at ORNL on the chemical fractionation of boron isotopes between BF/sub 3/ gas and the liquid molecular addition compounds of BF/sub 3/. Thirty compounds were studied, ten of them in detail. Graphs and equations are given for variation of isotopic equilibrium constant, vapor pressure, and BF/sub 3/ solubility as a function of temperature. Rate of isotopic exchange and melting points were determined. Several of the compounds are likely candidates for use in a gas-liquid countercurrent exchange system for large-scale separation of boron isotopes. 23 figs, 53 tables, 39 references.

  11. Boron cycling in subduction zones

    OpenAIRE

    Palmer, Martin R.

    2017-01-01

    Subduction zones are geologically dramatic features, with much of the drama being driven by the movement of water. The “light and lively” nature of boron, coupled with its wide variations in isotopic composition shown by the different geo-players in this drama, make it an ideal tracer for the role and movement of water during subduction. The utility of boron ranges from monitoring how the fluids that are expelled from the accretionary prism influence seawater chemistry, to the subduction of c...

  12. Synthesis of boron nitride from boron containing poly (vinyl alcohol ...

    Indian Academy of Sciences (India)

    A ceramic precursor, prepared by condensation reaction from poly(vinyl alcohol) (PVA) and boric acid (H3BO3) in 1:1, 2:1 and 4:1 molar ratios, was synthesized as low temperature synthesis route for boron nitride ceramic. Samples were pyrolyzed at 850°C in nitrogen atmosphere followed by characterization using Fourier ...

  13. Boron analysis and boron imaging in biological materials for Boron Neutron Capture Therapy (BNCT).

    Science.gov (United States)

    Wittig, Andrea; Michel, Jean; Moss, Raymond L; Stecher-Rasmussen, Finn; Arlinghaus, Heinrich F; Bendel, Peter; Mauri, Pier Luigi; Altieri, Saverio; Hilger, Ralf; Salvadori, Piero A; Menichetti, Luca; Zamenhof, Robert; Sauerwein, Wolfgang A G

    2008-10-01

    Boron Neutron Capture Therapy (BNCT) is based on the ability of the stable isotope 10B to capture neutrons, which leads to a nuclear reaction producing an alpha- and a 7Li-particle, both having a high biological effectiveness and a very short range in tissue, being limited to approximately one cell diameter. This opens the possibility for a highly selective cancer therapy. BNCT strongly depends on the selective uptake of 10B in tumor cells and on its distribution inside the cells. The chemical properties of boron and the need to discriminate different isotopes make the investigation of the concentration and distribution of 10B a challenging task. The most advanced techniques to measure and image boron are described, both invasive and non-invasive. The most promising approach for further investigation will be the complementary use of the different techniques to obtain the information that is mandatory for the future of this innovative treatment modality.

  14. Boron-enhanced diffusion of boron from ultralow-energy boron implantation

    International Nuclear Information System (INIS)

    Agarwal, A.; Eaglesham, D.J.; Gossmann, H.J.; Pelaz, L.; Herner, S.B.; Jacobson, D.C.

    1998-01-01

    The authors have investigated the diffusion enhancement mechanism of BED (boron enhanced diffusion), wherein the boron diffusivity is enhanced three to four times over the equilibrium diffusivity at 1,050 C in the proximity of a silicon layer containing a high boron concentration. It is shown that BED is associated with the formation of a fine-grain polycrystalline silicon boride phase within an initially amorphous Si layer having a high B concentration. For 0.5 keV B + , the threshold implantation dose which leads to BED lies between 3 x 10 14 and of 1 x 10 15 /cm -2 . Formation of the shallowest possible junctions by 0.5 keV B + requires that the implant dose be kept lower than this threshold

  15. Anisotropic non-Fermi liquids

    Science.gov (United States)

    Sur, Shouvik; Lee, Sung-Sik

    2016-11-01

    We study non-Fermi-liquid states that arise at the quantum critical points associated with the spin density wave (SDW) and charge density wave (CDW) transitions in metals with twofold rotational symmetry. We use the dimensional regularization scheme, where a one-dimensional Fermi surface is embedded in (3 -ɛ ) -dimensional momentum space. In three dimensions, quasilocal marginal Fermi liquids arise both at the SDW and CDW critical points: the speed of the collective mode along the ordering wave vector is logarithmically renormalized to zero compared to that of Fermi velocity. Below three dimensions, however, the SDW and CDW critical points exhibit drastically different behaviors. At the SDW critical point, a stable anisotropic non-Fermi-liquid state is realized for small ɛ , where not only time but also different spatial coordinates develop distinct anomalous dimensions. The non-Fermi liquid exhibits an emergent algebraic nesting as the patches of Fermi surface are deformed into a universal power-law shape near the hot spots. Due to the anisotropic scaling, the energy of incoherent spin fluctuations disperse with different power laws in different momentum directions. At the CDW critical point, on the other hand, the perturbative expansion breaks down immediately below three dimensions as the interaction renormalizes the speed of charge fluctuations to zero within a finite renormalization group scale through a two-loop effect. The difference originates from the fact that the vertex correction antiscreens the coupling at the SDW critical point whereas it screens at the CDW critical point.

  16. Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

    Science.gov (United States)

    Kurachi, Ikuo; Yoshioka, Kentaro

    2015-09-01

    An analytical boron diffusivity model in silicon for thermal diffusion from a boron silicate glass (BSG) film has been proposed in terms of enhanced diffusion due to boron-silicon interstitial pair formation. The silicon interstitial generation is considered to be a result of the silicon kick-out mechanism by the diffused boron at the surface. The additional silicon interstitial generation in the bulk silicon is considered to be the dissociation of the diffused pairs. The former one causes the surface boron concentration dependent diffusion. The latter one causes the local boron concentration dependent diffusion. The calculated boron profiles based on the diffusivity model are confirmed to agree with the actual diffusion profiles measured by secondary ion mass spectroscopy (SIMS) for a wide range of the BSG boron concentration. This analytical diffusivity model is a helpful tool for p+ boron diffusion process optimization of n-type solar cell manufacturing.

  17. Boron removal from wastewater using adsorbents.

    Science.gov (United States)

    Kluczka, J; Trojanowska, J; Zolotajkin, M; Ciba, J; Turek, M; Dydo, P

    2007-01-01

    In the present study, boron adsorption on activated alumina and activated carbon impregnated with calcium chloride, tartaric acid and mannitol was investigated. The adsorbate in question was the wastewater from the chemical landfill in Tarnowskie Gory of 25-70 mg l(-1) boron content. The removal of boron from the above-described wastewater was examined in the static (batch) and dynamic (column) experiments. The static experiments were carried out to assess boron adsorption isotherms, based on which the most efficient adsorbent as well as the rough resin load was determined. On the basis of the dynamic experiment results, the boron adsorptive capacities of the examined resins were deduced. It was concluded that the use of the impregnants increased the ability of activated carbon to adsorb boron. Granulated activated carbon WG-12 impregnated with mannitol was found to be the most promising for the boron removal from wastewater of the Chemical Wastewater Plant in Tarnowskie Gory.

  18. Reflection of light from an anisotropic medium

    OpenAIRE

    Ignatovich, Filipp V.; Ignatovich, Vladimir

    2010-01-01

    We present here a general approach to treat reflection and refraction of light of arbitrary polarization from single axis anisotropic plates. We show that reflection from interface inside the anisotropic medium is accompanied by beam splitting and can create surface waves.

  19. Anisotropic carrier mobility in single- and bi-layer C3N sheets

    Science.gov (United States)

    Wang, Xueyan; Li, Qingfang; Wang, Haifeng; Gao, Yan; Hou, Juan; Shao, Jianxin

    2018-05-01

    Based on the density functional theory combined with the Boltzmann transport equation with relaxation time approximation, we investigate the electronic structure and predict the carrier mobility of single- and bi-layer newly fabricated 2D carbon nitrides C3N. Although C3N sheets possess graphene-like planar hexagonal structure, the calculated carrier mobility is remarkably anisotropic, which is found mainly induced by the anisotropic effective masses and deformation potential constants. Importantly, we find that both the electron and hole mobilities are considerable high, for example, the hole mobility along the armchair direction of single-layer C3N sheets can arrive as high as 1.08 ×104 cm2 V-1 s-1, greatly larger than that of C2N-h2D and many other typical 2D materials. Owing to the high and anisotropic carrier mobility and appropriate band gap, single- and bi-layer semiconducting C3N sheets may have great potential applications in high performance electronic and optoelectronic devices.

  20. Efficient Wavefield Extrapolation In Anisotropic Media

    KAUST Repository

    Alkhalifah, Tariq

    2014-07-03

    Various examples are provided for wavefield extrapolation in anisotropic media. In one example, among others, a method includes determining an effective isotropic velocity model and extrapolating an equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield. The effective isotropic velocity model can be based upon a kinematic geometrical representation of an anisotropic, poroelastic or viscoelastic wavefield. Extrapolating the equivalent propagation can use isotopic, acoustic or elastic operators based upon the determined effective isotropic velocity model. In another example, non-transitory computer readable medium stores an application that, when executed by processing circuitry, causes the processing circuitry to determine the effective isotropic velocity model and extrapolate the equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield. In another example, a system includes processing circuitry and an application configured to cause the system to determine the effective isotropic velocity model and extrapolate the equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield.

  1. Work Function Characterization of Potassium-Intercalated, Boron Nitride Doped Graphitic Petals

    Directory of Open Access Journals (Sweden)

    Patrick T. McCarthy

    2017-07-01

    Full Text Available This paper reports on characterization techniques for electron emission from potassium-intercalated boron nitride-modified graphitic petals (GPs. Carbon-based materials offer potentially good performance in electron emission applications owing to high thermal stability and a wide range of nanostructures that increase emission current via field enhancement. Furthermore, potassium adsorption and intercalation of carbon-based nanoscale emitters decreases work functions from approximately 4.6 eV to as low as 2.0 eV. In this study, boron nitride modifications of GPs were performed. Hexagonal boron nitride is a planar structure akin to graphene and has demonstrated useful chemical and electrical properties when embedded in graphitic layers. Photoemission induced by simulated solar excitation was employed to characterize the emitter electron energy distributions, and changes in the electron emission characteristics with respect to temperature identified annealing temperature limits. After several heating cycles, a single stable emission peak with work function of 2.8 eV was present for the intercalated GP sample up to 1,000 K. Up to 600 K, the potassium-intercalated boron nitride modified sample exhibited improved retention of potassium in the form of multiple emission peaks (1.8, 2.5, and 3.3 eV resulting in a large net electron emission relative to the unmodified graphitic sample. However, upon further heating to 1,000 K, the unmodified GP sample demonstrated better stability and higher emission current than the boron nitride modified sample. Both samples deintercalated above 1,000 K.

  2. Advanced microstructure of boron carbide.

    Science.gov (United States)

    Werheit, Helmut; Shalamberidze, Sulkhan

    2012-09-26

    The rhombohedral elementary cell of the complex boron carbide structure is composed of B(12) or B(11)C icosahedra and CBC, CBB or B□B (□, vacancy) linear arrangements, whose shares vary depending on the actual chemical compound. The evaluation of the IR phonon spectra of isotopically pure boron carbide yields the quantitative concentrations of these components within the homogeneity range. The structure formula of B(4.3)C at the carbon-rich limit of the homogeneity range is (B(11)C) (CBC)(0.91) (B□B)(0.09) (□, vacancy); and the actual structure formula of B(13)C(2) is (B(12))(0.5)(B(11)C)(0.5)(CBC)(0.65)(CBB)(0.16) (B□B)(0.19), and deviates fundamentally from (B(12))CBC, predicted by theory to be the energetically most favourable structure of boron carbide. In reality, it is the most distorted structure in the homogeneity range. The spectra of (nat)B(x)C make it evident that boron isotopes are not randomly distributed in the structure. However, doping with 2% silicon brings about a random distribution.

  3. Boron isotopes in geothermal systems

    International Nuclear Information System (INIS)

    Aggarwal, J.

    1997-01-01

    Boron is a highly mobile element and during water-rock reactions, boron is leached out of rocks with no apparent fractionation. In geothermal systems where the water recharging the systems are meteoric in origin, the B isotope ratio of the geothermal fluid reflects the B isotope ratio of the rocks. Seawater has a distinctive B isotope ratio and where seawater recharges the geothermal system, the B isotope ratio of the geothermal system reflects the mixing of rock derived B and seawater derived B. Any deviations of the actual B isotope ratio of a mixture reflects subtle differences in the water-rock ratios in the cold downwelling limb of the hydrothermal system. This paper will present data from a variety of different geothermal systems, including New Zealand; Iceland; Yellowston, USA; Ibusuki, Japan to show the range in B isotope ratios in active geothermal systems. Some of these systems show well defined mixing trends between seawater and the host rocks, whilst others show the boron isotope ratios of the host rock only. In geothermal systems containing high amounts of CO 2 boron isotope ratios from a volatile B source can also be inferred. (auth)

  4. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    electrolysis was crystalline in nature, X-ray diffraction pat-. ∗. Author for correspondence (sas@igcar.gov.in) .... Elemental boron was synthesized by the electrolysis of molten potassium fluroborate dissolved in a ... A high-throughput Renishaw micro-Raman spectrome- ter (model Invia) was employed to record Raman ...

  5. Preparation process of boron nitride

    International Nuclear Information System (INIS)

    Mignani, G.; Ardaud, P.

    1990-01-01

    High purity boron nitride, without Si and a low carbon content, is prepared by pyrolysis, under an ammoniac atmosphere, of the reaction product between a B-trihalogenoborazole and a primary amine RNH 2 when R is a hydrocarbon radical eventually substituted containing from 1 to 6 carbon atoms inclusively [fr

  6. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Structural characterization of electrodeposited boron was carried out by using transmission electron microscopy and Raman spectroscopy. Electron diffraction and phase contrast imaging were carried out by using transmission electron microscopy. Phase identification was done based on the analysis of electron diffraction ...

  7. Method of separating boron isotopes

    Science.gov (United States)

    Jensen, Reed J.; Thorne, James M.; Cluff, Coran L.; Hayes, John K.

    1984-01-01

    A method of boron isotope enrichment involving the isotope preferential photolysis of (2-chloroethenyl)dichloroborane as the feed material. The photolysis can readily be achieved with CO.sub.2 laser radiation and using fluences significantly below those required to dissociate BCl.sub.3.

  8. Prevention of uncontrolled boron dilution

    International Nuclear Information System (INIS)

    Sere, J. L.

    1997-01-01

    The paper presents a synthesis of the global analysis of uncontrolled boron dilution risk performed by (European Consortium Mochovce (EUCOM) in the frame of Safety Measures RC 01 and AA 11. Recommendation for additional improvements (mainly I and C interlocks or inhibition) are presented. (author)

  9. Boron-11 MRI and MRS of intact animals infused with a boron neutron capture agent

    International Nuclear Information System (INIS)

    Kabalka, G.W.; Davis, M.; Bendel, P.

    1988-01-01

    Boron neutron capture therapy (BNCT) depends on the delivery of boron-containing drugs to a targeted lesion. Currently, the verification and quantification of in vivo boron content is a difficult problem. Boron-11 spectroscopy was utilized to confirm the presence of a dimeric sulfhydryl dodecaborane BNCT agent contained in an intact animal. Spectroscopy experiments revealed that the decay time of transverse magnetization of the boron-11 spins was less than 1 ms which precluded the use of a 2DFT imaging protocol. A back-projection protocol was developed and utilized to generate the first boron-11 image of a BNCT agent in the liver of an intact Fisher 344 rat

  10. Inserting Stress Analysis of Combined Hexagonal Aluminum Honeycombs

    Directory of Open Access Journals (Sweden)

    Xiangcheng Li

    2016-01-01

    Full Text Available Two kinds of hexagonal aluminum honeycombs are tested to study their out-of-plane crushing behavior. In the tests, honeycomb samples, including single hexagonal aluminum honeycomb (SHAH samples and two stack-up combined hexagonal aluminum honeycombs (CHAH samples, are compressed at a fixed quasistatic loading rate. The results show that the inserting process of CHAH can erase the initial peak stress that occurred in SHAH. Meanwhile, energy-absorbing property of combined honeycomb samples is more beneficial than the one of single honeycomb sample with the same thickness if the two types of honeycomb samples are completely crushed. Then, the applicability of the existing theoretical model for single hexagonal honeycomb is discussed, and an area equivalent method is proposed to calculate the crushing stress for nearly regular hexagonal honeycombs. Furthermore, a semiempirical formula is proposed to calculate the inserting plateau stress of two stack-up CHAH, in which structural parameters and mechanics properties of base material are concerned. The results show that the predicted stresses of three kinds of two stack-up combined honeycombs are in good agreement with the experimental data. Based on this study, stress-displacement curve of aluminum honeycombs can be designed in detail, which is very beneficial to optimize the energy-absorbing structures in engineering fields.

  11. Convergence of calculated dislocation core structures in hexagonal close packed titanium

    Science.gov (United States)

    Poschmann, Max; Asta, Mark; Chrzan, D. C.

    2018-01-01

    The core structure of -type screw dislocations in hexagonal close packed titanium is investigated computationally using periodic supercells with quadrupolar configurations in combination with density functional theory (DFT) and a modified embedded atom method (MEAM) classical potential. Two arrangements of the quadrupolar supercell configurations are examined, and within each arrangement two initial dislocation positions are compared. (Meta)stable pyramidal and prismatic dislocation core structures exist within both DFT and MEAM methods, and the relaxed structure from a given configuration resulting from our anisotropic elasticity theory solution depends only on the assumed initial dislocation positions. Within DFT we find the ground state core structure to be spread on the pyramidal plane. We find that it is necessary to include the semi-core 3p electrons as valence states in the DFT calculations in order to converge the ground state dislocation core configuration and difference in energy between structures. In terms of k-point sampling, it is found that at least a 1× 1× 15 k-point mesh is necessary to converge the dislocation core structure for a supercell one Burgers vector deep. Use of higher k-point densities or inclusion of additional semi-core electronic states as valence electrons results in the same core structure. With the MEAM potential considered in this work, we find the ground state core configuration to be spread predominantly on the prismatic plane, in contrast with the DFT results.

  12. Stability of anisotropic stellar filaments

    Science.gov (United States)

    Bhatti, M. Zaeem-ul-Haq; Yousaf, Z.

    2017-12-01

    The study of perturbation of self-gravitating celestial cylindrical object have been carried out in this paper. We have designed a framework to construct the collapse equation by formulating the modified field equations with the background of f(R , T) theory as well as dynamical equations from the contracted form of Bianchi identities with anisotropic matter configuration. We have encapsulated the radial perturbations on metric and material variables of the geometry with some known static profile at Newtonian and post-Newtonian regimes. We examined a strong dependence of unstable regions on stiffness parameter which measures the rigidity of the fluid. Also, the static profile and matter variables with f(R , T) dark source terms control the instability of compact cylindrical system.

  13. Warm anisotropic inflationary universe model

    International Nuclear Information System (INIS)

    Sharif, M.; Saleem, Rabia

    2014-01-01

    This paper is devoted to the study of warm inflation using vector fields in the background of a locally rotationally symmetric Bianchi type I model of the universe. We formulate the field equations, and slow-roll and perturbation parameters (scalar and tensor power spectra as well as their spectral indices) in the slow-roll approximation. We evaluate all these parameters in terms of the directional Hubble parameter during the intermediate and logamediate inflationary regimes by taking the dissipation factor as a function of the scalar field as well as a constant. In each case, we calculate the observational parameter of interest, i.e., the tensor-scalar ratio in terms of the inflaton. The graphical behavior of these parameters shows that the anisotropic model is also compatible with WMAP7 and the Planck observational data. (orig.)

  14. Warm anisotropic inflationary universe model

    Energy Technology Data Exchange (ETDEWEB)

    Sharif, M.; Saleem, Rabia [University of the Punjab, Department of Mathematics, Lahore (Pakistan)

    2014-02-15

    This paper is devoted to the study of warm inflation using vector fields in the background of a locally rotationally symmetric Bianchi type I model of the universe. We formulate the field equations, and slow-roll and perturbation parameters (scalar and tensor power spectra as well as their spectral indices) in the slow-roll approximation. We evaluate all these parameters in terms of the directional Hubble parameter during the intermediate and logamediate inflationary regimes by taking the dissipation factor as a function of the scalar field as well as a constant. In each case, we calculate the observational parameter of interest, i.e., the tensor-scalar ratio in terms of the inflaton. The graphical behavior of these parameters shows that the anisotropic model is also compatible with WMAP7 and the Planck observational data. (orig.)

  15. Effects of boron-water on cattle

    Energy Technology Data Exchange (ETDEWEB)

    Green, G.H.; Weeth, H.J.

    1975-01-01

    To determine the effects of subtoxic concentrations of boron in drinking water, 12 Hereford heifers were used in a 3 x 3 latin-square experiment with four squares. Treatments were tap-water (0.8 ppm boron), 150 ppm boron-water, and 300 ppm boron-water. Periods were 30 days each. Total urine was collected during the last week of each period, and renal clearance observations (based on creatinine) were made on the last day of each period. While water consumption and total urine weight were not affected by the boron treatments, hay consumption decreased, and weight loss was noted. Plasma boron concentrations were 0.53 +/- 0.151 ppm, 11.2 +/- 0.91 ppm, and 18.9 +/- 0.60 ppm while the heifers were drinking tap-water, 150 ppm boron-water, and 300 ppm boron-water respectively. Urinary boron excretion rates were tap water, 64 +/- 5.6 mg/day; 150 ppm, 2841 +/- 181.2 mg/day; 300 ppm, 4932 +/- 173.3 mg/day. Although glomerular filtration and osmolal clearance were unaffected by the boron-waters, a relative diuresis was indicated by the free water clearance effects. The percent of filtered boron which was reabsorbed decreased with increased exogenous boron, as well as both plasma and urinary phosphate. These data indicate that 300 ppm boron is not acutely toxic to heifers when consumed via the drinking water. The safe tolerance concentration, however, must lie below 150 ppm because this concentration was responsible for some deleterious effects.

  16. Ab initio engineering of materials with stacked hexagonal tin frameworks

    Science.gov (United States)

    Shao, Junping; Beaufils, Clément; Kolmogorov, Aleksey N.

    2016-07-01

    The group-IV tin has been hypothesized to possess intriguing electronic properties in an atom-thick hexagonal form. An attractive pathway of producing sizable 2D crystallites of tin is based on deintercalation of bulk compounds with suitable tin frameworks. Here, we have identified a new synthesizable metal distannide, NaSn2, with a 3D stacking of flat hexagonal layers and examined a known compound, BaSn2, with buckled hexagonal layers. Our ab initio results illustrate that despite being an exception to the 8-electron rule, NaSn2 should form under pressures easily achievable in multi-anvil cells and remain (meta)stable under ambient conditions. Based on calculated Z2 invariants, the predicted NaSn2 may display topologically non-trivial behavior and the known BaSn2 could be a strong topological insulator.

  17. Multilayer DNA Origami Packed on Hexagonal and Hybrid Lattices

    DEFF Research Database (Denmark)

    Ke, Yonggang; Voigt, Niels Vinther; Shih, William M.

    2012-01-01

    “Scaffolded DNA origami” has been proven to be a powerful and efficient approach to construct two-dimensional or three-dimensional objects with great complexity. Multilayer DNA origami has been demonstrated with helices packing along either honeycomb-lattice geometry or square-lattice geometry....... Here we report successful folding of multilayer DNA origami with helices arranged on a close-packed hexagonal lattice. This arrangement yields a higher density of helical packing and therefore higher resolution of spatial addressing than has been shown previously. We also demonstrate hybrid multilayer...... DNA origami with honeycomb-lattice, square-lattice, and hexagonal-lattice packing of helices all in one design. The availability of hexagonal close-packing of helices extends our ability to build complex structures using DNA nanotechnology....

  18. Hydrothermal synthesis, magnetic and electromagnetic properties of hexagonal Fe{sub 3}O{sub 4} microplates

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Fei-Xiang [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); MOE Key Laboratory of Micro-system and Micro-structures Manufacturing, Harbin Institute of Technology, Harbin 150080 (China); Sun, Xue-Yin [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); He, Kai [Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742 (United States); Jiang, Jian-Tang [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zhen, Liang [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); MOE Key Laboratory of Micro-system and Micro-structures Manufacturing, Harbin Institute of Technology, Harbin 150080 (China); Xu, Cheng-Yan, E-mail: cy_xu@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); MOE Key Laboratory of Micro-system and Micro-structures Manufacturing, Harbin Institute of Technology, Harbin 150080 (China)

    2014-06-01

    Magnetite (Fe{sub 3}O{sub 4}), with an inverse spinel structure, grows naturally in octahedral shape with eight equivalent {111} crystallographic planes. Here we demonstrated the successful morphology tuning of Fe{sub 3}O{sub 4} microcrystal from the dominant octahedral shape to planar microplate shape by a facile hydrothermal method. The top and bottom surfaces of Fe{sub 3}O{sub 4} microplates obtained under strongly alkaline and reductive conditions were bounded by {111} facets, and the formation of {111} twin planes was thought to be accountable for the anisotropic morphologies. The obtained Fe{sub 3}O{sub 4} microplates delivered saturation magnetization (M{sub s}) of 96.6 emu/g and coercivity (H{sub c}) of 50 Oe. We also measured the electromagnetic properties of Fe{sub 3}O{sub 4} microplates for possible applications as filler for electromagnetic wave absorption coatings. - Highlights: • Single-crystal Fe{sub 3}O{sub 4} microplates with well-defined hexagonal shapes were successfully prepared. • Formation of twin planes was accountable for the anisotropic growth of Fe{sub 3}O{sub 4} microplates. • Fe{sub 3}O{sub 4} microplates showed potential applications as filler for EMA coatings.

  19. Re-sintered boron-rich polycrystalline cubic boron nitride and method for making same

    Energy Technology Data Exchange (ETDEWEB)

    Lavens, T.R.; Corrigan, F.R.; Shott, R.L.; Bovenkerk, H.P.

    1987-06-16

    A method is described for making re-sintered polycrystalline cubic boron nitride (CBN) which comprises: (a) placing sintered substantially catalyst-free boron-rich polycrystalline cubic boron nitride particles in a high pressure/high temperature apparatus, the particles being substantially free of sintering inhibiting impurities; (b) subjecting the boron-rich cubic boron nitride particles to a pressure and a temperature adequate to re-sinter the particles, the temperature being below the CBN reconversion temperature; (c) maintaining the temperature and pressure for a time sufficient to re-sinter the boron-rich cubic boron nitride particles in the apparatus, and (d) recovering the re-sintered polycrystalline cubic boron nitride from the apparatus.

  20. Finite-volume scheme for anisotropic diffusion

    Energy Technology Data Exchange (ETDEWEB)

    Es, Bram van, E-mail: bramiozo@gmail.com [Centrum Wiskunde & Informatica, P.O. Box 94079, 1090GB Amsterdam (Netherlands); FOM Institute DIFFER, Dutch Institute for Fundamental Energy Research, The Netherlands" 1 (Netherlands); Koren, Barry [Eindhoven University of Technology (Netherlands); Blank, Hugo J. de [FOM Institute DIFFER, Dutch Institute for Fundamental Energy Research, The Netherlands" 1 (Netherlands)

    2016-02-01

    In this paper, we apply a special finite-volume scheme, limited to smooth temperature distributions and Cartesian grids, to test the importance of connectivity of the finite volumes. The area of application is nuclear fusion plasma with field line aligned temperature gradients and extreme anisotropy. We apply the scheme to the anisotropic heat-conduction equation, and compare its results with those of existing finite-volume schemes for anisotropic diffusion. Also, we introduce a general model adaptation of the steady diffusion equation for extremely anisotropic diffusion problems with closed field lines.

  1. Hexagonal Pixels and Indexing Scheme for Binary Images

    Science.gov (United States)

    Johnson, Gordon G.

    2004-01-01

    A scheme for resampling binaryimage data from a rectangular grid to a regular hexagonal grid and an associated tree-structured pixel-indexing scheme keyed to the level of resolution have been devised. This scheme could be utilized in conjunction with appropriate image-data-processing algorithms to enable automated retrieval and/or recognition of images. For some purposes, this scheme is superior to a prior scheme that relies on rectangular pixels: one example of such a purpose is recognition of fingerprints, which can be approximated more closely by use of line segments along hexagonal axes than by line segments along rectangular axes. This scheme could also be combined with algorithms for query-image-based retrieval of images via the Internet. A binary image on a rectangular grid is generated by raster scanning or by sampling on a stationary grid of rectangular pixels. In either case, each pixel (each cell in the rectangular grid) is denoted as either bright or dark, depending on whether the light level in the pixel is above or below a prescribed threshold. The binary data on such an image are stored in a matrix form that lends itself readily to searches of line segments aligned with either or both of the perpendicular coordinate axes. The first step in resampling onto a regular hexagonal grid is to make the resolution of the hexagonal grid fine enough to capture all the binaryimage detail from the rectangular grid. In practice, this amounts to choosing a hexagonal-cell width equal to or less than a third of the rectangular- cell width. Once the data have been resampled onto the hexagonal grid, the image can readily be checked for line segments aligned with the hexagonal coordinate axes, which typically lie at angles of 30deg, 90deg, and 150deg with respect to say, the horizontal rectangular coordinate axis. Optionally, one can then rotate the rectangular image by 90deg, then again sample onto the hexagonal grid and check for line segments at angles of 0deg, 60deg

  2. Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

    International Nuclear Information System (INIS)

    Nistor, L C; Nistor, S V; Dinca, G; Georgeoni, P; Landuyt, J van; Manfredotti, C; Vittone, E

    2002-01-01

    High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp 3 bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m -2 is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond

  3. Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

    Energy Technology Data Exchange (ETDEWEB)

    Nistor, L C [National Institute for Materials Physics, Bucharest (Romania); Nistor, S V [National Institute for Materials Physics, Bucharest (Romania); Dinca, G [Dacia Synthetic Diamonds Factory, Bucharest (Romania); Georgeoni, P [Dacia Synthetic Diamonds Factory, Bucharest (Romania); Landuyt, J van [University of Antwerpen - RUCA, EMAT, Antwerpen (Belgium); Manfredotti, C [Experimental Physics Department, University of Turin, Turin (Italy); Vittone, E [Experimental Physics Department, University of Turin, Turin (Italy)

    2002-11-11

    High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp{sup 3} bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m{sup -2} is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond.

  4. Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

    CERN Document Server

    Nistor, L C; Dinca, G; Georgeoni, P; Landuyt, J V; Manfredotti, C; Vittone, E

    2002-01-01

    High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp sup 3 bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m sup - sup 2 is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD di...

  5. The mechanism for low temperature growth of vertically aligned boron nitride nanotubes

    Science.gov (United States)

    Wang, Jiesheng; Xie, Ming; Khin Yap, Yoke

    2006-03-01

    Boron nitride nanotubes (BNNTs) are well recognized as the candidate that will complement the uses of carbon nanotubes (CNTs) in nanotechnology. However, high growth temperatures (>1100 ^oC), low production yield, and impurities have prevented effective synthesis and applications of boron nitride nanotubes (BNNTs) in the past ten years. For the first time, we have succeeded on the growth of pure BNNTs on substrates [1, 2]. This has been realized based on our experiences of growing CNTs and boron nitride (BN) phases (cubic phase BN, hexagonal phase BN). According to our hypothetical model, energetic growth species play an important role on controlling the phases of BN solids. We have experimentally verified that BNNTs can be grown by energetic growth species by a plasma-enhanced pulsed laser deposition (PEPLD) technique. These BNNTs can be grown vertically aligned into arrays of regular patterns at 600 ^oC, and can be used for applications without purification. The growth mechanism of thee BNNTs will be discussed. [1]. Yap et al., Bull APS Vol 50, 1346-1347 (March 2005). [2]. Wang et al., nano Letters (2005) ASAP, DOI: 10.1021/nl051859n.

  6. Mechanical behavior enhancement of defective graphene sheet employing boron nitride coating via atomistic study

    Science.gov (United States)

    Setoodeh, A. R.; Badjian, H.

    2017-12-01

    The most stable form of boron nitride polymorph naming hexagonal boron nitride sheet has recently been widely concerned like graphite due to its interesting features such as electrical insulation and high thermal conductivity. In this study, the molecular dynamic simulations are implemented to investigate the mechanical properties of single-layer graphene sheets under tensile and compressive loadings in the absence and presence of boron–nitride coating layers. In this introduced hybrid nanostructure, the benefit of combining both individual interesting features of graphene and boron–nitride sheets such as exceptional mechanical and electrical properties can be simultaneously achieved for future potential application in nano devices. The influences of chiral indices, boundary conditions and presence of mono-atomic vacancy defects as well as coating dimension on the mechanical behavior of the resulted hybrid structure are reported. The interatomic forces between the atoms are modeled by employing the AIREBO and Tersoff–Brenner potentials for carbon–carbon and boron–nitrogen atoms in each layer, respectively. Furthermore, the van der Waal interlayer forces of carbon–boron and carbon–nitrogen are estimated by the Lennard–Jones potential field. Besides the potential improvement in electrical and physical properties of the nanostructure, it is demonstrated that the buckling load capacity of the fully coated graphene sheet with 3% concentration of mono-atomic vacancy defects noticeably enhances by amounts of 24.1%.

  7. Thermal conductivity of polymer composites with oriented boron nitride

    International Nuclear Information System (INIS)

    Ahn, Hong Jun; Eoh, Young Jun; Park, Sung Dae; Kim, Eung Soo

    2014-01-01

    Highlights: • Thermal conductivity depended on the orientation of BN in the polymer matrices. • Hexagonal boron nitride (BN) particles were treated by C 27 H 27 N 3 O 2 and C 14 H 6 O 8 . • Amphiphilic-agent-treated BN particles are more easily oriented in the composite. • BN/PVA composites with C 14 H 6 O 8 -treated BN showed the highest thermal conductivity. • Thermal conductivity of the composites was compared with several theoretical models. - Abstract: Thermal conductivity of boron nitride (BN) with polyvinyl alcohol (PVA) and/or polyvinyl butyral (PVB) was investigated as a function of the degree of BN orientation, the numbers of hydroxyl groups in the polymer matrices and the amphiphilic agents used. The composites with in-plane orientation of BN showed a higher thermal conductivity than the composites with out-of-plane orientation of BN due to the increase of thermal pathway. For a given BN content, the composites with in-plane orientation of BN/PVA showed higher thermal conductivity than the composites with in-plane orientation of BN/PVB. This result could be attributed to the improved degree of orientation of BN, caused by a larger number of hydroxyl groups being present. Those treated with C 14 H 6 O 8 amphiphilic agent demonstrated a higher thermal conductivity than those treated by C 27 H 27 N 3 O 2 . The measured thermal conductivity of the composites was compared with that predicted by the several theoretical models

  8. Interfacial stress field generate by a biperiodic hexagonal network of misfit dislocations in a thin bicristal InAs/(111GaAs

    Directory of Open Access Journals (Sweden)

    Outtas, T.

    2004-04-01

    Full Text Available The elastic interactions generated by the presence of a biperiodic network, more precisely hexagonal, of misfit dislocations in the interfacing of a thin bicristal have been simulated numerically while considering an anisotropic elasticity for each crystal. The representation of the normal equi-stress near the dislocation segments and near of the triple node of hexagonal cell permits to detect the stress concentration zone du to elastic field for InAs/(111GaAs system, because, in the category of semiconductors, this is an ideal system which exhibit the presence of edge dislocations type parallels to the free surfaces by S.T.M.[1].

    Las interacciones elásticas generadas por la presencia de una red biperiódica, de dislocaciones en la interfase de un bicristal han sido simuladas numéricamente, considerando elasticidad anisotropa para cada cristal. La representación de las tensiones próximas a las dislocaciones y del nodo triple de la celda hexagonal, permite detectar la zona de concentración de tensiones debido al campo elástico para el sistema InAS/(111 GaAS, ya que, en los semiconductores, éste es un sistema ideal que muestra la presencia de dislocaciones paralelas a las superficies libres por S.T.M.[1].

  9. Structural Characterization of Hexagonal Braiding Architecture Aided by 3D Printing

    Directory of Open Access Journals (Sweden)

    Li Zhengning

    2018-01-01

    Full Text Available Hexagonal braiding method has the advantages of high shape compatibility, interlacing density and high volume fraction. Based on hexagonal braiding method, a hexagonal preform was braided. Then, by following the characteristics of repeatability and concentricity of hexagonal braided preform, the printed geometry structure was got in order to understand and optimize geometric structure to make it more compact like the braided geometric structure. Finally, the unit cells were defined with hexagonal prism to analyze the micro-geometric structure of hexagonal braided preform.

  10. Polymer-Derived Boron Nitride: A Review on the Chemistry, Shaping and Ceramic Conversion of Borazine Derivatives

    OpenAIRE

    Bernard, Samuel; Miele, Philippe

    2014-01-01

    Boron nitride (BN) is a III-V compound which is the focus of important research since its discovery in the early 19th century. BN is electronic to carbon and thus, in the same way that carbon exists as graphite, BN exists in the hexagonal phase. The latter offers an unusual combination of properties that cannot be found in any other ceramics. However, these properties closely depend on the synthesis processes. This review states the recent developments in the preparation of BN through the che...

  11. Boron clusters in luminescent materials.

    Science.gov (United States)

    Mukherjee, Sanjoy; Thilagar, Pakkirisamy

    2016-01-21

    In recent times, luminescent materials with tunable emission properties have found applications in almost all aspects of modern material sciences. Any discussion on the recent developments in luminescent materials would be incomplete if one does not account for the versatile photophysical features of boron containing compounds. Apart from triarylboranes and tetra-coordinate borate dyes, luminescent materials consisting of boron clusters have also found immense interest in recent times. Recent studies have unveiled the opportunities hidden within boranes, carboranes and metalloboranes, etc. as active constituents of luminescent materials. From simple illustrations of luminescence, to advanced applications in LASERs, OLEDs and bioimaging, etc., the unique features of such compounds and their promising versatility have already been established. In this review, recent revelations about the excellent photophysical properties of such materials are discussed.

  12. Boron-10 ABUNCL Active Testing

    Energy Technology Data Exchange (ETDEWEB)

    Kouzes, Richard T.; Ely, James H.; Lintereur, Azaree T.; Siciliano, Edward R.

    2013-07-09

    The Department of Energy Office of Nuclear Safeguards and Security (NA-241) is supporting the project Coincidence Counting With Boron-Based Alternative Neutron Detection Technology at Pacific Northwest National Laboratory (PNNL) for the development of a 3He proportional counter alternative neutron coincidence counter. The goal of this project is to design, build and demonstrate a system based upon 10B-lined proportional tubes in a configuration typical for 3He-based coincidence counter applications. This report provides results from testing of the active mode of the General Electric Reuter-Stokes Alternative Boron-Based Uranium Neutron Coincidence Collar (ABUNCL) at Los Alamos National Laboratory using sources and fuel pins.

  13. Boron removal from geothermal waters by electrocoagulation.

    Science.gov (United States)

    Yilmaz, A Erdem; Boncukcuoğlu, Recep; Kocakerim, M Muhtar; Yilmaz, M Tolga; Paluluoğlu, Cihan

    2008-05-01

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm(2), but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%.

  14. Removal of boron (B) from waste liquors.

    Science.gov (United States)

    Jiang, J Q; Xu, Y; Simon, J; Quill, K; Shettle, K

    2006-01-01

    This paper explores the use of electrocoagulation to remove boron from waste effluent in comparison with alum coagulation. In treating model test wastes, greater boron removals were achieved with electrocoagulation at low doses than conventional alum coagulation when reaction was undertaken for the same conditions (pH 8.5, and initial boron concentration was 500 mg/L). Al electrocoagulation can achieve good boron removal performance (68.3%) at a dose of 2.1 (as molar ratio of Al:B, and for current density of 62.1 A/m2), while alum coagulation can only achieve the maximum boron removal of 56% at a dose of 2.4. Also, Al electrocoagulation can remove 15-20% more boron than alum coagulation for the same dose compared in the treatment of both model test wastes and industry effluent. The estimation of running costs shows that to achieve 75% boron removal from industry waste effluent, i.e. removing 150 g of boron from 1 m3 of effluent, electrocoagulation was 6.2 times cheaper than alum coagulation. The economic advantage of electrocoagulation in the treatment of boron-containing waste effluent is thus significant.

  15. The boron geochemistry of siliceous sponges

    Science.gov (United States)

    de Leon, A.; Wille, M.; Eggins, S. M.; Ellwood, M. J.

    2009-12-01

    The boron content and isotopic composition (δ11B) of marine carbonate organisms can be linked to the pH of the seawater in which they have grown, making carbonates a useful tool for palaeo-seawater pH reconstruction. A study by Furst (1981) documented unusually high boron concentrations in siliceous sponge spicules, in range from hundreds to a thousand ppm. This observation and the potential for preferential incorporation of the tetrahedral borate species into biogenic silica raises the question as to whether the boron chemistry of biogenic silica might also be influenced by seawater pH. We have measured the boron concentration and isotopic composition of siliceous sponges from the Southern Ocean region, with a view to (1) confirming the observations of Furst (1981), (2) assessing the factors that control boron incorporation and isotopic compositions of sponge silica, and (3) investigating the potentially significant role of siliceous sponges in the marine boron cycle. The measured boron concentrations in a diverse range of both demosponge and hexactinellid sponges confirm the high boron concentrations previously reported. The boron isotope compositions of these sponges vary from around +2‰ to +25‰ and greatly exceed the range in marine carbonates. This isotopic variation is inconsistent with seawater pH control but is correlated with ambient seawater silicon concentration, in a manner that suggests a link to silicon uptake kinetics and demand by sponges.

  16. Mineral resource of the month: boron

    Science.gov (United States)

    Crangle, Robert D.

    2012-01-01

    The article offers information on the mineral, boron. Boron compounds, particularly borates, have more commercial applications than its elemental relative which is a metalloid. Making up the 90% of the borates that are used worldwide are colemanite, kernite, tincal, and ulexite. The main borate deposits are located in the Mojave Desert of the U.S., the Tethyan belt in southern Asia, and the Andean belt of South America. Underground and surface mining are being used in gathering boron compounds. INSETS: Fun facts;Boron production and consumption.

  17. Conduction mechanism in boron carbide

    Science.gov (United States)

    Wood, C.; Emin, D.

    1984-01-01

    Electrical conductivity, Seebeck-coefficient, and Hall-effect measurements have been made on single-phase boron carbides, B(1-x)C(x), in the compositional range from 0.1 to 0.2 X, and between room temperature and 1273 K. The results indicate that the predominant conduction mechanism is small-polaron hopping between carbon atoms at geometrically inequivalent sites.

  18. Viscous anisotropic hydrodynamics for the Gubser flow

    Science.gov (United States)

    Martinez, M.; McNelis, M.; Heinz, U.

    2017-11-01

    In this work we describe the dynamics of a highly anisotropic system undergoing boost-invariant longitudinal and azimuthally symmetric radial expansion (Gubser flow) for arbitrary shear viscosity to entropy density ratio. We derive the equations of motion of dissipative anisotropic hydrodynamics by applying to this situation the moments method recently derived by Molnár et al. (MNR) [E. Molnar, H. Niemi, and D. H. Rischke, "Derivation of anisotropic dissipative fluid dynamics from the Boltzmann equation," Phys. Rev. D93 no. 11, (2016) 114025, arxiv:arXiv:1602.00573 [nucl-th], E. Molnar, H. Niemi, and D. H. Rischke, "Closing the equations of motion of anisotropic fluid dynamics by a judicious choice of a moment of the Boltzmann equation," Phys. Rev. D94 no. 12, (2016) 125003, arxiv:arXiv:1606.09019 [nucl-th

  19. Anisotropic magnetoresistance in a Fermi glass

    International Nuclear Information System (INIS)

    Ovadyahu, Z.; Physics Department, Ben-Gurion University of the Negev, Beer-Sheva, Israel 84120)

    1986-01-01

    Insulating thin films of indium oxide exhibit negative, anisotropic magnetoresistance. The systematics of these results imply that the magnetoresistance mechanism may give different weight to the distribution of the localization lengths than that given by the hopping conductivity

  20. Modelling Coulomb Collisions in Anisotropic Plasmas

    Science.gov (United States)

    Hellinger, P.; Travnicek, P. M.

    2009-12-01

    Collisional transport in anisotropic plasmas is investigated comparing the theoretical transport coefficients (Hellinger and Travnicek, 2009) for anisotropic particles with the results of the corresponding Langevin equation, obtained as a generalization of Manheimer et al. (1997). References: Hellinger, P., and P. M. Travnicek (2009), On Coulomb collisions in bi-Maxwellian plasmas, Phys. Plasmas, 16, 054501. Manheimer, W. M., M. Lampe and G. Joyce (1997), Langevin representation of Coulomb collisions in PIC simulations, J. Comput. Phys., 138, 563-584.

  1. Anisotropic rectangular metric for polygonal surface remeshing

    KAUST Repository

    Pellenard, Bertrand

    2013-06-18

    We propose a new method for anisotropic polygonal surface remeshing. Our algorithm takes as input a surface triangle mesh. An anisotropic rectangular metric, defined at each triangle facet of the input mesh, is derived from both a user-specified normal-based tolerance error and the requirement to favor rectangle-shaped polygons. Our algorithm uses a greedy optimization procedure that adds, deletes and relocates generators so as to match two criteria related to partitioning and conformity.

  2. Penetration effect in uniaxial anisotropic metamaterials

    Science.gov (United States)

    Vytovtov, K.; Barabanova, E.; Zouhdi, S.

    2018-02-01

    Plane harmonic wave propagation along an interface between vacuum and a semi-infinite anisotropic metamaterial is considered. Possibility of penetration effect in the considered case is studied. It is shown that there is a bulk wave within the anisotropic metamaterial with an arbitrary orientation of the anisotropy axis. It is also proved that a reflected wave must propagate perpendicularly to the interface in the case of the extraordinary wave. Moreover, no wave is reflected in the case of ordinary wave propagation.

  3. Scattering phase functions of horizontally oriented hexagonal ice crystals

    International Nuclear Information System (INIS)

    Chen Guang; Yang Ping; Kattawar, George W.; Mishchenko, Michael I.

    2006-01-01

    Finite-difference time domain (FDTD) solutions are first compared with the corresponding T-matrix results for light scattering by circular cylinders with specific orientations. The FDTD method is then utilized to study the scattering properties of horizontally oriented hexagonal ice plates at two wavelengths, 0.55 and 12 μm. The phase functions of horizontally oriented ice plates deviate substantially from their counterparts obtained for randomly oriented particles. Furthermore, we compute the phase functions of horizontally oriented ice crystal columns by using the FDTD method along with two schemes for averaging over the particle orientations. It is shown that the phase functions of hexagonal ice columns with horizontal orientations are not sensitive to the rotation about the principal axes of the particles. Moreover, hexagonal ice crystals and circular cylindrical ice particles have similar optical properties, particularly, at a strongly absorbing wavelength, if the two particle geometries have the same length and aspect ratio defined as the ratio of the radius or semi-width of the cross section of a particle to its length. The phase functions for the two particle geometries are slightly different in the case of weakly absorbing plates with large aspect ratios. However, the solutions for circular cylinders agree well with their counterparts for hexagonal columns

  4. Influence of strontium on the cubic to ordered hexagonal phase

    Indian Academy of Sciences (India)

    ... Refresher Courses · Symposia · Live Streaming. Home; Journals; Bulletin of Materials Science; Volume 23; Issue 6. Influence of strontium on the cubic to ordered hexagonal phase transformation in barium magnesium niobate. M Thirumal A K Ganguli. Phase Transitions Volume 23 Issue 6 December 2000 pp 495-498 ...

  5. Epitaxial hexagonal materials on IBAD-textured substrates

    Science.gov (United States)

    Matias, Vladimir; Yung, Christopher

    2017-08-15

    A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-nitride (III-N) semiconductors, a oriented textured layer, and a non-single crystal substrate, and methods for making the same. The textured layer has a crystalline alignment preferably formed by the ion-beam assisted deposition (IBAD) texturing process and can be biaxially aligned. The in-plane crystalline texture of the textured layer is sufficiently low to allow growth of high quality hexagonal material, but can still be significantly greater than the required in-plane crystalline texture of the hexagonal material. The IBAD process enables low-cost, large-area, flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for manufacture of electronic devices, enabling scaled-up roll-to-roll, sheet-to-sheet, or similar fabrication processes to be used. The user is able to choose a substrate for its mechanical and thermal properties, such as how well its coefficient of thermal expansion matches that of the hexagonal epitaxial layer, while choosing a textured layer that more closely lattice matches that layer.

  6. Influence of strontium on the cubic to ordered hexagonal phase ...

    Indian Academy of Sciences (India)

    ... Refresher Courses · Symposia · Live Streaming. Home; Journals; Bulletin of Materials Science; Volume 23; Issue 6. Influence of strontium on the cubic to ordered hexagonal phase transformation in barium magnesium niobate. M Thirumal A K Ganguli. Phase Transitions Volume 23 Issue 6 December 2000 pp 495-498 ...

  7. Electrochemical and SEM properties of Co ion in hexagonal ...

    Indian Academy of Sciences (India)

    Administrator

    switchable privacy windows, optical computing and opti- cal devices for communication networks (Zhang and. Schuster 1994; Deschenaux et al 1996). The hexagonal phase composition of the P84/Co/p-xylene system was determined according to the phase diagram established in the literature (Raman et al 1996; Paavola ...

  8. Electrochemical and SEM properties of Co ion in hexagonal ...

    Indian Academy of Sciences (India)

    Administrator

    ion to Co metal. The hexagonal (H1) lyotropic liquid crystalline phases of P84 surfactant have been used to template the electrochemical deposition of nanostructured cobalt films as well as its uses as background electrolyte. Elec- trochemical studies show that these films have very high surface areas, which reveals that the ...

  9. Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires

    KAUST Repository

    Wang, Ping

    2015-12-22

    Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001 ̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about two-fold larger in magnitude than those on the (0001 ̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.

  10. A very simple proof of Pascal's hexagon theorem and some ...

    Indian Academy of Sciences (India)

    In this article we present a simple and elegant algebraic proof of Pascal's hexagon theorem which requires only knowledge of basics on conic sections without theory of projective transformations. Also, we provide an efficient algorithm for finding an equation of the conic containing five given points and a criterion for ...

  11. Crystal structure of hexagonal RE(CO{sub 3})OH

    Energy Technology Data Exchange (ETDEWEB)

    Michiba, Kiyonori; Tahara, Takeshi; Nakai, Izumi [Tokyo Univ. of Science, Shinjuku (Japan). Faculty of Science; Miyawaki, Ritsuro; Matsubara, Satoshi [National Museum of Nature and Science, Tokyo (Japan). Dept. of Geology and Paleontology

    2011-07-01

    Hexagonal rare earth carbonate hydroxides, RE(CO{sub 3})OH, where RE = La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, and Er, were hydrothermally synthesized from formic acid and hydroxide gels of rare earth elements. The crystals exhibited bicephalous hexagonal prisms with lengths of several tens of micrometers. The crystal structures of a series of hexagonal RE(CO{sub 3})OH were solved using the single crystal CCD-XRD intensity data sets. The space groups of the synthetic hexagonal RE(CO{sub 3})OH crystals are all P- anti 6. The present study has cast doubt upon the space group P- anti 62c previously reported for the natural Ce(CO{sub 3})OH, hydroxylbastnaesite-(Ce). The cell parameters decreased linearly with decreases in the ionic radii of the rare earth elements. La(CO{sub 3})OH showed the largest unit cell (a = 12.6752(6), c = 10.0806(10) A), while Er(CO{sub 3})OH showed the smallest (a = 11.8977(4), c = 9.6978(8) A). The rare earth atoms are in ninefold coordination with oxygen atoms to form a tricapped trigonal prism. The structure consists of layers of {sup 2}{infinity}[(OH)RE{sub 3/3}]{sup 2+} ions linked by carbonate ions. Raman spectra indicate the presence of carbonate and hydroxide groups. An evolutionary shift was observed from La to Er towards higher frequency, which was associated with a decreasing RE-O bond length. (orig.)

  12. An anisotropic elastoplasticity model implemented in FLAG

    Energy Technology Data Exchange (ETDEWEB)

    Buechler, Miles Allen [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Canfield, Thomas R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-10-12

    Many metals, including Tantalum and Zirconium, exhibit anisotropic elastoplastic behavior at the single crystal level, and if components are manufactured from these metals through forming processes the polycrystal (component) may also exhibit anisotropic elastoplastic behavior. This is because the forming can induce a preferential orientation of the crystals in the polycrystal. One example is a rolled plate of Uranium where the sti /strong orientation of the crystal (c-axis) tends to align itself perpendicular to the rolling direction. If loads are applied to this plate in di erent orientations the sti ness as well as the ow strength of the material will be greater in the through thickness direction than in other directions. To better accommodate simulations of such materials, an anisotropic elastoplasticity model has been implemented in FLAG. The model includes an anisotropic elastic stress model as well as an anisotropic plasticity model. The model could represent single crystals of any symmetry, though it should not be confused with a high- delity crystal plasticity model with multiple slip planes and evolutions. The model is most appropriate for homogenized polycrystalline materials. Elastic rotation of the material due to deformation is captured, so the anisotropic models are appropriate for arbitrary large rotations, but currently they do not account for signi cant change in material texture beyond the elastic rotation of the entire polycrystal.

  13. Characterization of the secondary flow in hexagonal ducts

    Science.gov (United States)

    Marin, O.; Vinuesa, R.; Obabko, A. V.; Schlatter, P.

    2016-12-01

    In this work we report the results of DNSs and LESs of the turbulent flow through hexagonal ducts at friction Reynolds numbers based on centerplane wall shear and duct half-height Reτ,c ≃ 180, 360, and 550. The evolution of the Fanning friction factor f with Re is in very good agreement with experimental measurements. A significant disagreement between the DNS and previous RANS simulations was found in the prediction of the in-plane velocity, and is explained through the inability of the RANS model to properly reproduce the secondary flow present in the hexagon. The kinetic energy of the secondary flow integrated over the cross-sectional area yz decreases with Re in the hexagon, whereas it remains constant with Re in square ducts at comparable Reynolds numbers. Close connection between the values of Reynolds stress u w ¯ on the horizontal wall close to the corner and the interaction of bursting events between the horizontal and inclined walls is found. This interaction leads to the formation of the secondary flow, and is less frequent in the hexagon as Re increases due to the 120∘ aperture of its vertex, whereas in the square duct the 90∘ corner leads to the same level of interaction with increasing Re. Analysis of turbulence statistics at the centerplane and the azimuthal variance of the mean flow and the fluctuations shows a close connection between hexagonal ducts and pipe flows, since the hexagon exhibits near-axisymmetric conditions up to a distance of around 0.15DH measured from its center. Spanwise distributions of wall-shear stress show that in square ducts the 90∘ corner sets the location of a high-speed streak at a distance zv+≃50 from it, whereas in hexagons the 120∘ aperture leads to a shorter distance of zv+≃38 . At these locations the root mean square of the wall-shear stresses exhibits an inflection point, which further shows the connections between the near-wall structures and the large-scale motions in the outer flow.

  14. Mechanics of anisotropic spring networks.

    Science.gov (United States)

    Zhang, T; Schwarz, J M; Das, Moumita

    2014-12-01

    We construct and analyze a model for a disordered linear spring network with anisotropy. The modeling is motivated by, for example, granular systems, nematic elastomers, and ultimately cytoskeletal networks exhibiting some underlying anisotropy. The model consists of a triangular lattice with two different bond occupation probabilities, p(x) and p(y), for the linear springs. We develop an effective medium theory (EMT) to describe the network elasticity as a function of p(x) and p(y). We find that the onset of rigidity in the EMT agrees with Maxwell constraint counting. We also find beyond linear behavior in the shear and bulk modulus as a function of occupation probability in the rigid phase for small strains, which differs from the isotropic case. We compare our EMT with numerical simulations to find rather good agreement. Finally, we discuss the implications of extending the reach of effective medium theory as well as draw connections with prior work on both anisotropic and isotropic spring networks.

  15. Rotational discontinuities in anisotropic plasmas

    International Nuclear Information System (INIS)

    Omidi, N.

    1992-01-01

    The kinetic structure of rotational discontinuities (RDs) in anisotropic plasmas with T perpendicular /T parallel > 1 is investigated by using a one-dimensional electromagnetic hybrid code. To form the RD, a new approach is used where the plasma is injected from one boundary and reflected from the other, resulting in the generation of a traveling fast shock and an RD. Unlike the previously used methods, no a priori assumptions are made regarding the initial structure (i.e. width or sense of rotation) of the rotational discontinuity. The results show that across the RD both the magnetic field strength and direction, as well as the plasma density change. Given that such a change can also be associated with an intermediate shock, the Rankine-Hugoniot relations are used to confirm that the observed structures are indeed RDs. It is found that the thickness of RDs is a few ion inertial lengths and is independent of the rotation angle. Also, the preferred sense of rotation is in the electron sense; however, RDs with a rotation angle larger than 180 degree are found to be unstable, changing their rotation to a stable ion sense

  16. Generation and Characterization of Anisotropic Microstructures in Rare Earth-Iron-Boron Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Oster, Nathaniel [Iowa State Univ., Ames, IA (United States)

    2012-01-01

    The goal of this work is to investigate methods in which anisotropy could be induced in fine-grained alloys. We have identified two general processing routes to creating a fine, textured microstructure: form an amorphous precursor and devitrify in a manner that induces texture or form the fine, textured microstructure upon cooling directly from the liquid state. Since it is possible to form significant amounts of amorphous material in RE-Fe-B alloys, texture could be induced through biasing the orientationof the crystallites upon crystallization of the amorphous material. One method of creating this bias is to form glassy material and apply uniaxial pressure during crystallization. Experiments on this are presented. All of the work presented here utilizes melt-spinning, either to create precursor material, or to achieve a desired final microstructure. To obtain greater control of the system to process these materials, a study was done on the effects of heating the wheel and modifying the wheel’s surface finish on glass formation and phase selection. The second general approach—creating the desired microstructure directly from the liquid—can be done through directional rapid solidification. In particular, alloys melt-spun at low tangential wheel speeds often display directional columnar growth through a portion of the ribbon. By refining and stabilizing the columnar growth, a highly textured fine microstructure is achieved. The effects of adding a segregating element (Ag) on the columnar growth are characterized and presented.

  17. Effects of anisotropic diffusion and finite island sizes in homoepitaxial growth Pt on Pt(100)-hex

    DEFF Research Database (Denmark)

    Mortensen, Jens Jørgen; Linderoth, T.R.; Jacobsen, Karsten Wedel

    1998-01-01

    exhibits a height modulation caused by the misfit between the topmost quasi-hexagonal layer and the quadratic substrate. resulting in a highly anisotropic large scale surface morphology with six-atom wide channels running along the [1(1) over bar0$] direction. From an autocorrelation analysis...... coverage regime. have been determined for substrate temperatures in the range T = 318-497 K and adatom deposition rates from R=4 x 10(-5) to 7 x 10(-3) site(-1) s(-1). The measurements are compared to the results of kinetic Monte Carlo (KMC) simulations and rate equation theory. The Pt(100)-hex surface...... of the determined island positions, it is revealed that the islands are distributed with long/short correlation lengths along, perpendicular to the reconstruction channels. The autocorrelation analysis allows us to quantify the degree of anisotropy in adatom diffusion. Island size distributions obtained...

  18. 3d Anisotropic Post Stack Imaging on an Offshore Africa Case Study Étude de la migration anisotrope en 3D des traces sismiques sur un champ pétrolier offshore d'Afrique

    Directory of Open Access Journals (Sweden)

    Le Rousseau J.

    2006-12-01

    Full Text Available Seismic anisotropy may degrade the quality of seismic images and cause the mispositioning of events within them. Shales have often been observed to be significantly anisotropic, usually with approximately hexagonal symmetry (transverse isotropy with axis normal to the bedding plane. We investigate the effect of anisotropy on imaging a real data set from offshore Africa, where there are thick shale sequences. We perform, in parallel, isotropic and anisotropic velocity model building and 3D post-stack migration of the same stack volume. We observe that the anisotropic processing improves the focussing of dipping events and that the assumption of isotropy may cause lateral and vertical displacement of the reservoir boundaries, of around 100 and 200 meters respectively, relative to the positions obtained with the anisotropic processing. L'anisotropie sismique peut altérer la qualité des images sismiques et provoquer ainsi un mauvais positionnement. Les argiles se sont souvent révélées avoir des propriétés anisotropes, avec une symétrie presque hexagonale (isotropie transversale sur un axe normal par rapport au plan de stratification. Nous étudions ici l'effet de l'anisotropie sur la migration d'un ensemble de données réelles d'un gisement offshore africain possédant d'épaisses couches d'argile. Nous réalisons en parallèle la création des modèles de vitesse isotrope et anisotrope et la migration du même volume des données stacken utilisant les deux modèles. Nous observons que la méthode anisotrope améliore la mise au point en profondeur et que l'augmentation de l'isotropie peut provoquer un décalage latéral et vertical des limites du réservoir, respectivement de 100 et 200 mètres, par rapport aux positions obtenues avec la méthode anisotrope.

  19. Energetics of a hexagonal-lamellar-hexagonal-phase transition sequence in dioleoylphosphatidylethanolamine membranes

    International Nuclear Information System (INIS)

    Gawrisch, K.; Parsegian, V.A.; Hajduk, D.A.; Tate, M.W.; Gruner, S.M.; Fuller, N.L.; Rand, R.P.

    1992-01-01

    The phase diagram of DOPE/water dispersions was investigated by NMR and X-ray diffraction in the water concentration range from 2 to 20 water molecules per lipid and in the temperature range from -5 to +50C. At temperature above 22C, the dispersions form an inverse (H II ) phase at all water concentrations. Below 25C, an H II phase occurs at high water concentrations, an L α phase is formed at intermediate water concentrations, and finally the system switches back to an H II phase at low water concentrations. The enthalpy of the L α -H II -phase transition is +0.3 kcal/mol as measured by differential scanning calorimetry. Using 31 P and 2 H NMR and X-ray diffraction. The authors measured the trapped water volumes in H II and L α phases as a function of osmotic pressure. The change of the H II -phase free energy as a function of hydration was calculated by integrating the osmotic pressure vs trapped water volume curve. The phase diagram calculated on the basis of the known enthalpy of transition and the osmotic pressure vs water volume curves is in good agreement with the measured one. The H II -L α -H II double-phase transition at temperatures below 22C can be shown to be a consequence of (1) the greater degree of hydration of the H II phase in excess water and (2) the relative sensitivities with which the lamellar and hexagonal phases dehydrate with increasing osmotic pressure. These results demonstrate the usefulness of osmotic stress measurements to understand lipid-phase diagrams

  20. High-Yield Synthesis of Stoichiometric Boron Nitride Nanostructures

    Directory of Open Access Journals (Sweden)

    José E. Nocua

    2009-01-01

    Full Text Available Boron nitride (BN nanostructures are structural analogues of carbon nanostructures but have completely different bonding character and structural defects. They are chemically inert, electrically insulating, and potentially important in mechanical applications that include the strengthening of light structural materials. These applications require the reliable production of bulk amounts of pure BN nanostructures in order to be able to reinforce large quantities of structural materials, hence the need for the development of high-yield synthesis methods of pure BN nanostructures. Using borazine (B3N3H6 as chemical precursor and the hot-filament chemical vapor deposition (HFCVD technique, pure BN nanostructures with cross-sectional sizes ranging between 20 and 50 nm were obtained, including nanoparticles and nanofibers. Their crystalline structure was characterized by (XRD, their morphology and nanostructure was examined by (SEM and (TEM, while their chemical composition was studied by (EDS, (FTIR, (EELS, and (XPS. Taken altogether, the results indicate that all the material obtained is stoichiometric nanostructured BN with hexagonal and rhombohedral crystalline structure.

  1. Boron nitride ceramics from molecular precursors: synthesis, properties and applications.

    Science.gov (United States)

    Bernard, Samuel; Salameh, Chrystelle; Miele, Philippe

    2016-01-21

    Hexagonal boron nitride (h-BN) attracts considerable interest because its structure is similar to that of carbon graphite while it displays different properties which are of interest for environmental and green technologies. The polar nature of the B-N bond in sp(2)-bonded BN makes it a wide band gap insulator with different chemistry on its surface and particular physical and chemical properties such as a high thermal conductivity, a high temperature stability, a high resistance to corrosion and oxidation and a strong UV emission. It is chemically inert and nontoxic and has good environmental compatibility. h-BN also has enhanced physisorption properties due to the dipolar fields near its surface. Such properties are closely dependent on the processing method. Bottom-up approaches consist of transforming molecular precursors into non-oxide ceramics with retention of the structural units inherent to the precursor molecule. The purpose of the present review is to give an up-to-date overview on the most recent achievements in the preparation of h-BN from borazine-based molecular single-source precursors including borazine and 2,4,6-trichloroborazine through both vapor phase syntheses and methods in the liquid/solid state involving polymeric intermediates, called the Polymer-Derived Ceramics (PDCs) route. In particular, the effect of the chemistry, composition and architecture of the borazine-based precursors and derived polymers on the shaping ability as well as the properties of h-BN is particularly highlighted.

  2. Polypropylene Biocomposites with Boron Nitride and Nanohydroxyapatite Reinforcements

    Directory of Open Access Journals (Sweden)

    Kai Wang Chan

    2015-03-01

    Full Text Available In this study, we develop binary polypropylene (PP composites with hexagonal boron nitride (hBN nanoplatelets and ternary hybrids reinforced with hBN and nanohydroxyapatite (nHA. Filler hybridization is a sound approach to make novel nanocomposites with useful biological and mechanical properties. Tensile test, osteoblastic cell culture and dimethyl thiazolyl diphenyl tetrazolium (MTT assay were employed to investigate the mechanical performance, bioactivity and biocompatibility of binary PP/hBN and ternary PP/hBN-nHA composites. The purpose is to prepare biocomposite nanomaterials with good mechanical properties and biocompatibility for replacing conventional polymer composites reinforced with large hydroxyapatite microparticles at a high loading of 40 vol%. Tensile test reveals that the elastic modulus of PP composites increases, while tensile elongation decreases with increasing hBN content. Hybridization of hBN with nHA further enhances elastic modulus of PP. The cell culture and MTT assay show that osteoblastic cells attach and proliferate on binary PP/hBN and ternary PP/hBN-20%nHA nanocomposites.

  3. Ultralow-loss polaritons in isotopically pure boron nitride

    Science.gov (United States)

    Giles, Alexander J.; Dai, Siyuan; Vurgaftman, Igor; Hoffman, Timothy; Liu, Song; Lindsay, Lucas; Ellis, Chase T.; Assefa, Nathanael; Chatzakis, Ioannis; Reinecke, Thomas L.; Tischler, Joseph G.; Fogler, Michael M.; Edgar, J. H.; Basov, D. N.; Caldwell, Joshua D.

    2018-02-01

    Conventional optical components are limited to size scales much larger than the wavelength of light, as changes to the amplitude, phase and polarization of the electromagnetic fields are accrued gradually along an optical path. However, advances in nanophotonics have produced ultrathin, so-called `flat' optical components that beget abrupt changes in these properties over distances significantly shorter than the free-space wavelength. Although high optical losses still plague many approaches, phonon polariton (PhP) materials have demonstrated long lifetimes for sub-diffractional modes in comparison to plasmon-polariton-based nanophotonics. We experimentally observe a threefold improvement in polariton lifetime through isotopic enrichment of hexagonal boron nitride (hBN). Commensurate increases in the polariton propagation length are demonstrated via direct imaging of polaritonic standing waves by means of infrared nano-optics. Our results provide the foundation for a materials-growth-directed approach aimed at realizing the loss control necessary for the development of PhP-based nanophotonic devices.

  4. Boron carbide synthesis by carbothermic reduction of boron oxide

    International Nuclear Information System (INIS)

    Castro, A.R.M. de; Paschoal, J.O.A.

    1988-01-01

    Boron carbide (B 4 C) is a ceramic material of technological applications due to its extreme hardness and high chemical as well as thermal stability. Some parameters of the process for obtaining B 4 C by carbothermic reduction of B 2 O 3 have been determined. The starting powders and the final products have been analysed by chemical, spectrographic and X-ray diffraction methods. The results show that the B 4 C obtained by the carbothermic reduction process is suitable for applications with a definite determination of the free carbon content. (author) [pt

  5. Boron Carbides As Thermo-electric Materials

    Science.gov (United States)

    Wood, Charles

    1988-01-01

    Report reviews recent theoretical and experimental research on thermoelectric materials. Recent work with narrow-band semiconductors demonstrated possibility of relatively high thermoelectric energy-conversion efficiencies in materials withstanding high temperatures needed to attain such efficiencies. Among promising semiconductors are boron-rich borides, especially boron carbides.

  6. Boron carbide whiskers produced by vapor deposition

    Science.gov (United States)

    1965-01-01

    Boron carbide whiskers have an excellent combination of properties for use as a reinforcement material. They are produced by vaporizing boron carbide powder and condensing the vapors on a substrate. Certain catalysts promote the growth rate and size of the whiskers.

  7. Hot flow behavior of boron microalloyed steels

    International Nuclear Information System (INIS)

    Lopez-Chipres, E.; Mejia, I.; Maldonado, C.; Bedolla-Jacuinde, A.; El-Wahabi, M.; Cabrera, J.M.

    2008-01-01

    This research work studies the effect of boron contents on the hot flow behavior of boron microalloyed steels. For this purpose, uniaxial hot-compression tests were carried out in a low carbon steel microalloyed with four different amounts of boron over a wide range of temperatures (950, 1000, 1050 and 1100 deg. C) and constant true strain rates (10 -3 , 10 -2 and 10 -1 s -1 ). Experimental results revealed that both peak stress and peak strain tend to decrease as boron content increases, which indicates that boron additions have a solid solution softening effect. Likewise, the flow curves show a delaying effect on the kinetics of dynamic recrystallization (DRX) when increasing boron content. Deformed microstructures show a finer austenitic grain size in the steel with higher boron content (grain refinement effect). Results are discussed in terms of boron segregation towards austenitic grain boundaries during plastic deformation, which increases the movement of dislocations, enhances the grain boundary cohesion and modificates the grain boundary structure

  8. Compression and associated properties of boron carbide

    Science.gov (United States)

    Ciezak, Jennifer; Dandekar, Dattatraya

    2009-06-01

    The observed loss of shear strength of boron carbide around 22 GPa has been attributed to presence of amorphous material in the shock recovered, and statically indented and pressurized boron carbide. The present work presents a more direct association of the observed loss of shear strength in boron carbide under plane shock wave compression to amorphization in boron carbide under triaxial stress compression. This evidence is obtained from in-situ measurement of Raman, and infrared vibrational spectra of boron carbide confined in a Diamond Anvil Cell (DAC) under hydrostatic and non-hydrostatic pressures. X-ray-diffraction measurements do show a shift in the compression of boron carbide around 27 GPa. However, X-ray diffraction measurements indicate that the amorphization does not extend to micron scale, as there is no evidence of a loss of crystallinity in the recorded diffraction pattern of boron carbide to 47 GPa. Our work shows that shear plays a very dominant role in the stress-induced amorphization of boron carbide.

  9. Ultratough single crystal boron-doped diamond

    Science.gov (United States)

    Hemley, Russell J [Carnegie Inst. for Science, Washington, DC ; Mao, Ho-Kwang [Carnegie Inst. for Science, Washington, DC ; Yan, Chih-Shiue [Carnegie Inst. for Science, Washington, DC ; Liang, Qi [Carnegie Inst. for Science, Washington, DC

    2015-05-05

    The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

  10. Spectral tailoring for boron Neutron capture therapy

    NARCIS (Netherlands)

    Nievaart, V.A.

    2007-01-01

    In several places in the world, such as Petten and Delft in the Netherlands, investigations are in progress in the fight against certain types of cancer with Boron Neutron Capture Therapy. The basic idea is very simple: boron is loaded only into the cancer cells, using a special drug, after which

  11. Fabrication of boron-phosphide neutron detectors

    International Nuclear Information System (INIS)

    Fitzsimmons, M.; Pynn, R.

    1997-01-01

    Boron phosphide is a potentially viable candidate for high neutron flux neutron detectors. The authors have explored chemical vapor deposition methods to produce such detectors and have not been able to produce good boron phosphide coatings on silicon carbide substrates. However, semi-conducting quality films have been produced. Further testing is required

  12. Possible toxicity of boron on sugar cane

    Energy Technology Data Exchange (ETDEWEB)

    Bravo C., M.

    Analyses of necrotic and green leaf tissues from sugar cane grown in the Tambo Valley (Arequipa, Peru) have shown that the boron concentration in necrotic tissue (average 657.7 ppm) is several times higher than that in the green tissue (average 55.7 ppm). This suggests that the necrosis may be due to boron toxicity.

  13. Boron isotopic enrichment by displacement chromatography

    International Nuclear Information System (INIS)

    Mohapatra, K.K.; Bose, Arun

    2014-01-01

    10 B enriched boron is used in applications requiring high volumetric neutron absorption (absorption cross section- 3837 barn for thermal and 1 barn for 1 MeV fast neutron). It is used in fast breeder reactor (as control rod material), in neutron counter, in Boron Neutron Capture Therapy etc. Owing to very small separation factor, boron isotopic enrichment is a complex process requiring large number of separation stages. Heavy Water Board has ventured in industrial scale production of 10 B enriched boron using Exchange Distillation Process as well as Ion Displacement Chromatography Process. Ion Displacement Chromatography process is used in Boron Enrichment Plant at HWP, Manuguru. It is based on isotopic exchange between borate ions (B(OH) 4 - ) on anion exchange resin and boric acid passing through resin. The isotopic exchange takes place due to difference in zero point energy of 10 B and 11 B

  14. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B.; Koetz, R. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H.J.; Nesper, R. [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  15. Continuum modeling of boron nitride nanotubes

    International Nuclear Information System (INIS)

    Song, J; Wu, J; Hwang, K C; Huang, Y

    2008-01-01

    Boron nitride nanotubes display unique properties and have many potential applications. A finite-deformation shell theory is developed for boron nitride nanotubes directly from the interatomic potential to account for the effect of bending and curvature. Its constitutive relation accounts for the nonlinear, multi-body atomistic interactions, and therefore can model the important effect of tube chirality and radius. The theory is then used to determine whether a single-wall boron nitride nanotube can be modeled as a linear elastic isotropic shell. Instabilities of boron nitride nanotubes under different loadings (e.g., tension, compression, and torsion) are also studied. It is shown that the tension instability of boron nitride nanotubes is material instability, while the compression and torsion instabilities are structural instabilities.

  16. Stabilization of boron carbide via silicon doping.

    Science.gov (United States)

    Proctor, J E; Bhakhri, V; Hao, R; Prior, T J; Scheler, T; Gregoryanz, E; Chhowalla, M; Giulani, F

    2015-01-14

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  17. BN Nanosheet/Polymer Films with Highly Anisotropic Thermal Conductivity for Thermal Management Applications.

    Science.gov (United States)

    Wu, Yuanpeng; Xue, Ye; Qin, Si; Liu, Dan; Wang, Xuebin; Hu, Xiao; Li, Jingliang; Wang, Xungai; Bando, Yoshio; Golberg, Dmitri; Chen, Ying; Gogotsi, Yury; Lei, Weiwei

    2017-12-13

    The development of advanced thermal transport materials is a global challenge. Two-dimensional nanomaterials have been demonstrated as promising candidates for thermal management applications. Here, we report a boron nitride (BN) nanosheet/polymer composite film with excellent flexibility and toughness prepared by vacuum-assisted filtration. The mechanical performance of the composite film is highly flexible and robust. It is noteworthy that the film exhibits highly anisotropic properties, with superior in-plane thermal conductivity of around 200 W m -1 K -1 and extremely low through-plane thermal conductivity of 1.0 W m -1 K -1 , making this material an excellent candidate for thermal management in electronics. Importantly, the composite film shows fire-resistant properties. The newly developed unconventional flexible, tough, and refractory BN films are also promising for heat dissipation in a variety of applications.

  18. Electrical transport properties of (BN-rich hexagonal (BNC semiconductor alloys

    Directory of Open Access Journals (Sweden)

    M. R. Uddin

    2014-08-01

    Full Text Available The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BNC, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN and electrical conductivity control (from semi-metal for graphite to insulator for undoped h-BN through alloying and have the potential to complement III-nitride wide bandgap semiconductors and carbon based nanostructured materials. Epilayers of (BN-rich h-(BN1-x(C2x alloys were synthesized by metal-organic chemical vapor deposition (MOCVD on (0001 sapphire substrates. Hall-effect measurements revealed that homogeneous (BN-rich h-(BN1-x(C2x alloys are naturally n-type. For alloys with x = 0.032, an electron mobility of about 20 cm2/Vs at 650 °K was measured. X-ray photoelectron spectroscopy (XPS was used to determine the chemical composition and analyze chemical bonding states. Both composition and chemical bonding analysis confirm the formation of alloys. XPS results indicate that the carbon concentration in the alloys increases almost linearly with the flow rate of the carbon precursor (propane (C3H8 employed during the epilayer growth. XPS chemical bonding analysis showed that these MOCVD grown alloys possess more C-N bonds than C-B bonds, which possibly renders the undoped h-(BN1-x(C2x alloys n-type and corroborates the Hall-effect measurement results.

  19. A new spectral framework for crystal plasticity modeling of cubic and hexagonal polycrystalline metals

    Science.gov (United States)

    Knezevic, Marko

    Crystal plasticity physics-based constitutive theories are used in understanding and predicting the evolution of the underlying microstructure and the concomitant anisotropic stress-strain response in polycrystalline metals subjected to finite plastic strains. A new scheme for efficient crystal plasticity computations for both cubic and hexagonal polycrystalline metals subjected to arbitrary deformation modes has been developed in this thesis. This new computational scheme involves building material databases comprised of spectral coefficients. These spectral coefficients are computed using discrete Fourier transforms (DFTs) and allow for compact representation and fast retrieval of crystal plasticity solutions for a crystal of any orientation subjected to any deformation mode. The novel approach is able to speed up the conventional crystal plasticity computations by two orders of magnitude. Furthermore, mathematical procedures for delineation of property closures that identify the complete set of theoretically feasible combinations of macroscale effective properties has been developed for a broad set of mechanical properties. Subsequently, these constructs were used in microstructure design for identifying an optimal microstructure for selected performance criteria. And finally, hybrid processing recipes that transform a given initial microstructure into a member of the set of optimal microstructures that exhibit superior properties or performance characteristics have been described. Insights and tremendous potential of these novel materials knowledge systems are discussed and demonstrated through specific case-studies. The anisotropic stress-strain response measured in simple compression and simple tension tests in different sample directions on an annealed, strongly textured, AZ31 sheet has been studied. New insights into the mechanical response of this material were obtained by correlating the changes in the measured strain-hardening rates in the different

  20. Analysis of boron nitride by flame spectrometry methods

    International Nuclear Information System (INIS)

    Telegin, G.F.; Chapysheva, G.Ya.; Shilkina, N.N.

    1989-01-01

    A rapid method has been developed for determination of free and total boron contents as well as trace impurities in boron nitride by using autoclave sample decomposition followed by atomic emission and atomic absorption determination. The relative standard deviation is not greater than 0.03 in the determination of free boron 0.012 in the determination of total boron content

  1. Chemical vapor deposited boron carbide

    International Nuclear Information System (INIS)

    Mackinnon, I.D.R.; Smith, K.L.

    1987-01-01

    Detailed analytical electron microscope (AEM) studies of yellow whiskers produced by chemical vapor deposition (CVD) show that two basic types of whiskers are produced at low temperatures (between 1200 0 C and 1400 0 C) and low boron to carbon gas ratios. Both whisker types show planar microstructures such as twin planes and stacking faults oriented parallel to, or at a rhombohedral angle to, the growth direction. For both whisker types, the presence of droplet-like terminations containing both Si and Ni indicate that the growth process during CVD is via a vapor-liquid-solid (VLS) mechanisms

  2. Boron enrichment in martian clay.

    Directory of Open Access Journals (Sweden)

    James D Stephenson

    Full Text Available We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration.

  3. Boron Enrichment in Martian Clay

    Science.gov (United States)

    Nagashima, Kazuhide; Freeland, Stephen J.

    2013-01-01

    We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration. PMID:23762242

  4. Positron annihilation in boron nitride

    Directory of Open Access Journals (Sweden)

    N.Amrane

    2006-01-01

    Full Text Available Electron and positron charge densities are calculated as a function of position in the unit cell for boron nitride. Wave functions are derived from pseudopotential band structure calculations and the independent particle approximation (IPM, respectively, for electrons and positrons. It is observed that the positron density is maximum in the open interstices and is excluded not only from ion cores but also to a considerable degree from valence bonds. Electron-positron momentum densities are calculated for (001,110 planes. The results are used in order to analyse the positron effects in BN.

  5. Anisotropic nanomaterials: structure, growth, assembly, and functions

    Science.gov (United States)

    Sajanlal, Panikkanvalappil R.; Sreeprasad, Theruvakkattil S.; Samal, Akshaya K.; Pradeep, Thalappil

    2011-01-01

    Comprehensive knowledge over the shape of nanomaterials is a critical factor in designing devices with desired functions. Due to this reason, systematic efforts have been made to synthesize materials of diverse shape in the nanoscale regime. Anisotropic nanomaterials are a class of materials in which their properties are direction-dependent and more than one structural parameter is needed to describe them. Their unique and fine-tuned physical and chemical properties make them ideal candidates for devising new applications. In addition, the assembly of ordered one-dimensional (1D), two-dimensional (2D), and three-dimensional (3D) arrays of anisotropic nanoparticles brings novel properties into the resulting system, which would be entirely different from the properties of individual nanoparticles. This review presents an overview of current research in the area of anisotropic nanomaterials in general and noble metal nanoparticles in particular. We begin with an introduction to the advancements in this area followed by general aspects of the growth of anisotropic nanoparticles. Then we describe several important synthetic protocols for making anisotropic nanomaterials, followed by a summary of their assemblies, and conclude with major applications. PMID:22110867

  6. Effective medium theory for anisotropic metamaterials

    KAUST Repository

    Zhang, Xiujuan

    2015-01-20

    Materials with anisotropic material parameters can be utilized to fabricate many fascinating devices, such as hyperlenses, metasolids, and one-way waveguides. In this study, we analyze the effects of geometric anisotropy on a two-dimensional metamaterial composed of a rectangular array of elliptic cylinders and derive an effective medium theory for such a metamaterial. We find that it is possible to obtain a closed-form analytical solution for the anisotropic effective medium parameters, provided the aspect ratio of the lattice and the eccentricity of the elliptic cylinder satisfy certain conditions. The derived effective medium theory not only recovers the well-known Maxwell-Garnett results in the quasi-static regime, but is also valid beyond the long-wavelength limit, where the wavelength in the host medium is comparable to the size of the lattice so that previous anisotropic effective medium theories fail. Such an advance greatly broadens the applicable realm of the effective medium theory and introduces many possibilities in the design of structures with desired anisotropic material characteristics. A real sample of a recently theoretically proposed anisotropic medium, with a near-zero index to control the flux, is achieved using the derived effective medium theory, and control of the electromagnetic waves in the sample is clearly demonstrated.

  7. Boron nutrition and yield of alfalfa cultivar crioula in relation to boron supply

    Directory of Open Access Journals (Sweden)

    Santos Anacleto Ranulfo dos

    2004-01-01

    Full Text Available Alfalfa cultivar Crioula (Medicago sativa cv. Crioula is grown in South Brazil and only a few studies on the plants' boron requirement are available. A greenhouse experiment was carried out with alfalfa to measure boron acquisition, production and distribution in the plant; data on critical level and production potentials were recorded. Plants were grown in ground quartz added with 1 L of solution, with the following boron rates: 0, 0.0625, 0.125, 0.25, 0.50, 1.00, and 2.00 mg L-1. Plants were harvested at 46 days of growth. Forage dry mass was increased by boron supply and dry matter accumulation was considerably low in control. Boron concentration in the leaves was higher than in the stems or roots. Boron utilization from the external solution reached 90% at 0.0625 mg L-1 and sharply decreased with further increasing boron rates. Boron concentration and content in the leaves and in plant tops were at maximum when applied boron was between 1.5 and 1.6 mg L-1. Critical levels of boron in plant were 61 mg kg-1 in the leaves and 39 mg kg-1 in plant tops for this cultivar of alfalfa.

  8. Experimental boron neutron capture therapy for melanoma: Systemic delivery of boron to melanotic and amelanotic melanoma

    International Nuclear Information System (INIS)

    Coderre, J.A.; Glass, J.D.; Micca, P.; Greenberg, D.; Packer, S.

    1990-01-01

    The boron-containing melanin precursor analogue p-boronophenylalanine (BPA) has previously been shown to selectively deliver boron to pigmented murine melanomas when administered in a single intragastric dose. If boron neutron capture therapy is to become a clinically useful method of radiation therapy for human malignant melanoma, the boron carrier must be capable of delivering useful amounts of boron to remote tumor sites (metastases) and to poorly pigmented melanomas. The authors have now determined the ability of BPA to accumulate in several nonpigmented melanoma models including human melanoma xenografts in nude mice. The absolute amount of boron in the nonpigmented melanomas was about 50% of the observed in the pigmented counterparts but was still selectively concentrated in the tumor relative to normal tissues in amounts sufficient for effective neutron capture therapy. Single intragastric doses of BPA resulted in selective localization of boron in the amelanotic Greene melanoma carried in the anterior chamber of the rabbit eye and in a pigmented murine melanoma growing in the lungs. The ratio of the boron concentration in these tumors to the boron concentration in the immediately adjacent normal tissue was in the range of 3:1 to 4:1. These distribution studies support the proposal that boron neutron capture therapy may be useful as a regional therapy for malignant melanoma

  9. Energy dissipation mechanism revealed by spatially resolved Raman thermometry of graphene/hexagonal boron nitride heterostructure devices

    Science.gov (United States)

    Kim, Daehee; Kim, Hanul; Yun, Wan Soo; Watanabe, Kenji; Taniguchi, Takashi; Rho, Heesuk; Bae, Myung-Ho

    2018-04-01

    Understanding the energy transport by charge carriers and phonons in two-dimensional (2D) van der Waals heterostructures is essential for the development of future energy-efficient 2D nanoelectronics. Here, we performed in situ spatially resolved Raman thermometry on an electrically biased graphene channel and its hBN substrate to study the energy dissipation mechanism in graphene/hBN heterostructures. By comparing the temperature profile along the biased graphene channel with that along the hBN substrate, we found that the thermal boundary resistance between the graphene and hBN was in the range of (1-2) ~ × 10-7 m2 K W-1 from ~100 °C to the onset of graphene break-down at ~600 °C in air. Consideration of an electro-thermal transport model together with the Raman thermometry conducted in air showed that a doping effect occurred under a strong electric field played a crucial role in the energy dissipation of the graphene/hBN device up to T ~ 600 °C.

  10. Formation of hexagonal boron nitride nanoscrolls induced by inclusion and exclusion of self-assembling molecules in solution process

    Science.gov (United States)

    Hwang, Da Young; Suh, Dong Hack

    2014-05-01

    Unlike nanoscrolls of 2D graphene, those of 2D h-BN have not been demonstrated, except for only a few experimental reports. Nanoscrolls of h-BN with high yields and reproducibility are first synthesized by a simple solution process. Inner-tube diameters of BNSs including LCAs, N-(2-aminoethyl)-3α-hydroxy-5β-cholan-24-amide, a bile acid derivative and self-assembling material, can be controlled by adjusting the diameter of the LCA fiber which is grown by self-assembly. TEM and SEM images show that BNSs have a tube-like morphology and the inner-tube diameter of BNSs can be controlled in the range from 20 to 60 nm for a smaller diameter, up to 300 nm for a larger diameter by LCA fiber growth inside the BNSs. Finally, open cylindrical BNSs with hollow cores were obtained by dissolving LCAs inside BNSs.Unlike nanoscrolls of 2D graphene, those of 2D h-BN have not been demonstrated, except for only a few experimental reports. Nanoscrolls of h-BN with high yields and reproducibility are first synthesized by a simple solution process. Inner-tube diameters of BNSs including LCAs, N-(2-aminoethyl)-3α-hydroxy-5β-cholan-24-amide, a bile acid derivative and self-assembling material, can be controlled by adjusting the diameter of the LCA fiber which is grown by self-assembly. TEM and SEM images show that BNSs have a tube-like morphology and the inner-tube diameter of BNSs can be controlled in the range from 20 to 60 nm for a smaller diameter, up to 300 nm for a larger diameter by LCA fiber growth inside the BNSs. Finally, open cylindrical BNSs with hollow cores were obtained by dissolving LCAs inside BNSs. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr00897a

  11. Switching behavior and novel stable states of magnetic hexagonal nanorings

    Energy Technology Data Exchange (ETDEWEB)

    Yasir Rafique, M., E-mail: myasir.rafique@ciitlahore.edu.pk [Department of Physics, COMSATS Institute of Information Technology, Lahore 54000 (Pakistan); Pan, Liqing; Guo, Zhengang [College of Science and Research Institute for New Energy, China Three Gorges University, Yichang 443002 (China)

    2017-06-15

    Micromagnetic simulations for Cobalt hexagonal shape nanorings show onion (O) and vortex state (V) along with new state named “tri-domain state”. The tri-domain state is observed in sufficiently large width of ring. The magnetic reversible mechanism and transition of states are explained with help of vector field display. The transitions from one state to other occur by propagation of domain wall. The vertical parts of hexagonal rings play important role in developing the new “tri-domain” state. The behaviors of switching fields from onion to tri-domain (HO-Tr), tri-domain to vortex state (HTr-V) and vortex to onion state and “states size” are discussed in term of geometrical parameter of ring.

  12. Study of ceramic mixed boron element as a neutron shielding

    International Nuclear Information System (INIS)

    Ismail Mustapha; Mohd Reusmaazran Yusof; Md Fakarudin Ab Rahman; Nor Paiza Mohamad Hasan; Samihah Mustaffha; Yusof Abdullah; Mohamad Rabaie Shari; Airwan Affandi Mahmood; Nurliyana Abdullah; Hearie Hassan

    2012-01-01

    Shielding upon radiation should not be underestimated as it can causes hazard to health. Precautions on the released of radioactive materials should be well concerned and considered. Therefore, the combination of ceramic and boron make them very useful for shielding purpose in areas of low and intermediate neutron. A six grades of ceramic tile have been produced namely IMN05 - 5 % boron, IMN06 - 6 % boron, IMN07 - 7 % boron, IMN08 - 8 % boron, IMN09 - 9 % boron, IMN10 - 10 % boron from mixing, press and sintered process. Boron is a material that capable of absorbing and capturing neutron, so that neutron and gamma test were conducted to analyze the effectiveness of boron material in combination with ceramic as shielding. From the finding, percent reduction number of count per minute shows the ceramic tiles are capable to capture neutron. Apart from all the percentage of boron used, 10 % is the most effective shields since the percent reduction indicating greater neutron captured increased. (author)

  13. Analysis of Boron Distribution in Steel using Neutron at HANARO

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Eun-Joo; Seong, Baek-Seok; Kim, Hark-Rho [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2007-07-01

    Boron is very useful element in steels to improve the mechanical properties. In steel matrix, boron exist several types such as solute, segregation in grain boundary and many kinds of precipitate, which influence the properties of the steel. But, detecting of boron using X-ray or ion-beam is not easy because boron is very light atom than iron. However neutron gives the clear image of boron distribution from the particle tracking autoradiography (PTA) method. The PTA method of boron uses the phenomenon that boron irradiated by neutron emits Liion and alpha particle. Boron distribution can be obtained by observing the traces of the emitted Li-ion and alpha particle. At HANARO, the study for observing of boron distribution has been performed several years ago. Recently, the experimental techniques were improved for the reactor power of 30 MW. In this paper, improved experimental techniques were described and some results for boron added low-carbon steel plate were introduced.

  14. Bromide-Assisted Anisotropic Growth of Gold Nanoparticles as Substrates for Surface-Enhanced Raman Scattering

    Directory of Open Access Journals (Sweden)

    Melissa A. Kerr

    2016-01-01

    Full Text Available We report herein a one-step synthesis of gold nanoparticles (Au NPs of various shapes such as triangles, hexagons, and semispheres, using 5-hydroxyindoleacetic acid (5-HIAA as the reducing agent in the presence of potassium bromide (KBr. Anisotropic Au NPs have received ever-increasing attention in various areas of research due to their unique physical and chemical properties. Numerous synthetic methods involving either top-down or bottom-up approaches have been developed to synthesize Au NPs with deliberately varied shapes, sizes, and configurations; however, the production of templateless, seedless, and surfactant-free singular-shaped anisotropic Au NPs remains a significant challenge. The concentrations of hydrogen tetrachloroaurate (HAuCl4, 5-HIAA, and KBr, as well as the reaction temperature, were found to influence the resulting product morphology. A detailed characterization of the resulting Au NPs was performed using ultraviolet-visible (UV-Vis spectroscopy, scanning electron microscopy (SEM, and Raman spectroscopy. The as-prepared Au NPs exhibited excellent surface-enhanced Raman scattering (SERS properties, which make them very attractive for the development of SERS-based chemical and biological sensors.

  15. The structure and elastic moduli of flux-line lattices in anisotropic superconductors

    International Nuclear Information System (INIS)

    Grishin, A.M.; Martynovich, A.Yu.; Yampol'skiy, S.V.

    1992-01-01

    The elastic moduli of flux-line lattices in anisotropic superconductors are investigated. In addition to the well-known bulk, shear, and tilt moduli the authors observe moduli that relate deformations in the basal plane of the lattice to vortex tilt. These moduli vanish when the superconductor is magnetized along the axis of anisotropy. The vortex structure continuum realized in this case has identical bulk and shear moduli and different tilt moduli. A hexagonal flux-line lattice is realized in superconductors with 'easy axis' anisotropy when a weak magnetic field is applied. When the field H is applied in the ab-plane of the crystal the lattice becomes an oblique lattice with orthorhombic symmetry. This results in a sharp growth of its elastic moduli and the induction in the sample. Vortex chain structures are the only stable structures in 'easy plane' superconductors. The elastic moduli characterizing the rigidity of an isolated chain are exponentially large compared to the moduli describing interchain interaction. The tilt moduli may reverse their sign when H is oriented near the axis of anisotropy c for strongly anisotropic superconductors. In this case, the vortex structure and all related elastic moduli undergo a discontinuous irreversible change

  16. Growth mechanism of anisotropic gold nanocrystals via microwave synthesis: formation of dioleamide by gold nanocatalysis.

    Science.gov (United States)

    Mohamed, Mona B; AbouZeid, Khaled M; Abdelsayed, Victor; Aljarash, Ahlam A; El-Shall, M Samy

    2010-05-25

    A facile and fast one-pot microwave irradiation method has been developed to prepare different shapes of gold nanoparticles capped with a mixture of oleylamine and oleic acid. The size, shape, and morphology of the nanocrystals could be tailored by varying the ratio of oleylamine to oleic acid, the microwave time, and the concentration of the gold ions. These effects are directly reflected in the surface plasmon resonance properties of the resulting nanocrystals in the visible and near-infrared regions. Pure amine leads to the formation of only spherical particles. Introducing oleic acid increases the growth rate and enhances the formation of anisotropic shapes. Experimental evidence and new insights on the reaction mechanism confirm the formation of dioleamide from the reaction of oleic acid and oleylamine catalyzed by the gold nanocrystals. In the absence of gold nanoparticles, the conventional synthesis of dioleamide requires 12 h of reaction time at 120 degrees C. New insights on the reaction mechanism indicate that excess oleic acid enhances the formation of hexagons and more anisotropic shapes of the gold nanocrystals.

  17. Polymer- and salt-induced toroids of hexagonal DNA.

    OpenAIRE

    Ubbink, J; Odijk, T

    1995-01-01

    A model is proposed for polymer- and salt-induced toroidal condensates of DNA, based on a recent theory of the undulation enhancement of the electrostatic interaction in the bulk hexagonal phase of semiflexible polyions. In a continuum approximation, the thermodynamic potential of a monomolecular toroid may be split up in bulk, surface, and curvature contributions. With the help of an approximate analytical minimization procedure, the optimal torus dimensions are calculated as a function of t...

  18. Existence of non-abelian representations of the near hexagon

    Indian Academy of Sciences (India)

    In [5], a new combinatorial model with four types of points and nine types of lines of the slim dense near hexagon (5, 2) ⊗ (5, 2) was provided and it was then used to construct a non-abelain representation of (5, 2) ⊗ (5, 2) in the extraspecial 2-group 2 − 1 + 18 . In this paper, we give a direct proof for the existence of a ...

  19. Head-wave coefficients in anisotropic media

    Science.gov (United States)

    Chapman, Chris

    2018-03-01

    Reflections and transmissions from interfaces can generate head waves. Although the kinematic properties of head waves are modelled simply using ray concepts, the dynamic properties require an extension of ray theory or the use of wave theory. Head waves are important in exploration and crustal seismology as they indicate the existence of an interface and the velocity of the generating wave. Head waves have been described in the literature for isotropic media but the extension to anisotropic media seems to be lacking. The expressions for the head-wave coefficients using ray concepts or wave theory differ, and their equality is not obvious. This paper extends the theory for head-wave coefficients to anisotropic media using both ray theory and wave theory, and generalizes the proof of equality of the two methods. Simple numerical examples confirm this equality and indicate how the head-wave results can be calculated in anisotropic media and included in a ray-tracing algorithm.

  20. Elastic properties of spherically anisotropic piezoelectric composites

    International Nuclear Information System (INIS)

    En-Bo, Wei; Guo-Qing, Gu; Ying-Ming, Poon

    2010-01-01

    Effective elastic properties of spherically anisotropic piezoelectric composites, whose spherically anisotropic piezoelectric inclusions are embedded in an infinite non-piezoelectric matrix, are theoretically investigated. Analytical solutions for the elastic displacements and the electric potentials under a uniform external strain are derived exactly. Taking into account of the coupling effects of elasticity, permittivity and piezoelectricity, the formula is derived for estimating the effective elastic properties based on the average field theory in the dilute limit. An elastic response mechanism is revealed, in which the effective elastic properties increase as inclusion piezoelectric properties increase and inclusion dielectric properties decrease. Moreover, a piezoelectric response mechanism, of which the effective piezoelectric response vanishes due to the symmetry of spherically anisotropic composite, is also disclosed. (condensed matter: structure, thermal and mechanical properties)

  1. Generalized Fractional Derivative Anisotropic Viscoelastic Characterization

    Directory of Open Access Journals (Sweden)

    Harry H. Hilton

    2012-01-01

    Full Text Available Isotropic linear and nonlinear fractional derivative constitutive relations are formulated and examined in terms of many parameter generalized Kelvin models and are analytically extended to cover general anisotropic homogeneous or non-homogeneous as well as functionally graded viscoelastic material behavior. Equivalent integral constitutive relations, which are computationally more powerful, are derived from fractional differential ones and the associated anisotropic temperature-moisture-degree-of-cure shift functions and reduced times are established. Approximate Fourier transform inversions for fractional derivative relations are formulated and their accuracy is evaluated. The efficacy of integer and fractional derivative constitutive relations is compared and the preferential use of either characterization in analyzing isotropic and anisotropic real materials must be examined on a case-by-case basis. Approximate protocols for curve fitting analytical fractional derivative results to experimental data are formulated and evaluated.

  2. Femtosecond laser direct writing of monocrystalline hexagonal silver prisms

    International Nuclear Information System (INIS)

    Vora, Kevin; Kang, SeungYeon; Moebius, Michael; Mazur, Eric

    2014-01-01

    Bottom-up growth methods and top-down patterning techniques are both used to fabricate metal nanostructures, each with a distinct advantage: One creates crystalline structures and the other offers precise positioning. Here, we present a technique that localizes the growth of metal crystals to the focal volume of a laser beam, combining advantages from both approaches. We report the fabrication of silver nanoprisms—hexagonal nanoscale silver crystals—through irradiation with focused femtosecond laser pulses. The growth of these nanoprisms is due to a nonlinear optical interaction between femtosecond laser pulses and a polyvinylpyrrolidone film doped with silver nitrate. The hexagonal nanoprisms have bases hundreds of nanometers in size and the crystal growth occurs over exposure times of less than 1 ms (8 orders of magnitude faster than traditional chemical techniques). Electron backscatter diffraction analysis shows that the hexagonal nanoprisms are monocrystalline. The fabrication method combines advantages from both wet chemistry and femtosecond laser direct-writing to grow silver crystals in targeted locations. The results presented in this letter offer an approach to directly positioning and growing silver crystals on a substrate, which can be used for plasmonic devices.

  3. Cubic and hexagonal liquid crystals as drug delivery systems.

    Science.gov (United States)

    Chen, Yulin; Ma, Ping; Gui, Shuangying

    2014-01-01

    Lipids have been widely used as main constituents in various drug delivery systems, such as liposomes, solid lipid nanoparticles, nanostructured lipid carriers, and lipid-based lyotropic liquid crystals. Among them, lipid-based lyotropic liquid crystals have highly ordered, thermodynamically stable internal nanostructure, thereby offering the potential as a sustained drug release matrix. The intricate nanostructures of the cubic phase and hexagonal phase have been shown to provide diffusion controlled release of active pharmaceutical ingredients with a wide range of molecular weights and polarities. In addition, the biodegradable and biocompatible nature of lipids demonstrates the minimum toxicity and thus they are used for various routes of administration. Therefore, the research on lipid-based lyotropic liquid crystalline phases has attracted a lot of attention in recent years. This review will provide an overview of the lipids used to prepare cubic phase and hexagonal phase at physiological temperature, as well as the influencing factors on the phase transition of liquid crystals. In particular, the most current research progresses on cubic and hexagonal phases as drug delivery systems will be discussed.

  4. Cubic and Hexagonal Liquid Crystals as Drug Delivery Systems

    Directory of Open Access Journals (Sweden)

    Yulin Chen

    2014-01-01

    Full Text Available Lipids have been widely used as main constituents in various drug delivery systems, such as liposomes, solid lipid nanoparticles, nanostructured lipid carriers, and lipid-based lyotropic liquid crystals. Among them, lipid-based lyotropic liquid crystals have highly ordered, thermodynamically stable internal nanostructure, thereby offering the potential as a sustained drug release matrix. The intricate nanostructures of the cubic phase and hexagonal phase have been shown to provide diffusion controlled release of active pharmaceutical ingredients with a wide range of molecular weights and polarities. In addition, the biodegradable and biocompatible nature of lipids demonstrates the minimum toxicity and thus they are used for various routes of administration. Therefore, the research on lipid-based lyotropic liquid crystalline phases has attracted a lot of attention in recent years. This review will provide an overview of the lipids used to prepare cubic phase and hexagonal phase at physiological temperature, as well as the influencing factors on the phase transition of liquid crystals. In particular, the most current research progresses on cubic and hexagonal phases as drug delivery systems will be discussed.

  5. Study of some defects observed in the hexagonal liquid crystals

    International Nuclear Information System (INIS)

    Oswald, Patrick

    1981-01-01

    A polarising microscopy study of the disclinations in an hexagonal discotic liquid crystal (hexa-pentoxy-triphenylene) allows us to confirm the theory of the developable domains and the existence of the disclinations as involute of the circle. The absence of the lines S = 1 leads us to propose a model of core in which the energetic instability of these lines is emphasized. The nature of the core is discussed: it is probably filled with hexagonal liquid crystal. Moreover the birefringence Δn is measured and a first estimate of the anchoring energies of the discotic both on the glass and in contact with the air is given. The Michelson interferometry study of the interaction between the disclinations and the free surface has allowed to observe a strong anisotropy of the interfacial tension. At last a study of the walls leads to a classification according to the matching angle and to a first estimate of the penetration distance λ. A similar study has been undertaken in an inverse middle liquid crystalline phase (Na dioctylsulfosuccinate). A strong dependence of the elastic constants with the water concentration is observed. The micellar → hexagonal transition is studied. (author) [fr

  6. Studies on Separation Process and Production Technology of Boron Isotope

    OpenAIRE

    LI Jian-ping

    2014-01-01

    The boron isotopes separation test was performed by chemical exchange reaction in the benzene ether -three boron fluoride system, which resulted to the boron isotopic enrichment of -10 in the liquid phase, the boron isotopic enrichment of -11 in the gas phase. After then, boron isotope separation trial production has been finished. In this process, the exchange column and complex tower normal operating parameters and the complex tower technology have been obtained, the problems of material di...

  7. Boron-Loaded Silicone Rubber Scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Z.W.; Maya, L.; Brown, G.M.; Sloop, F.V.Jr

    2003-05-12

    Silicone rubber received attention as an alternative to polyvinyltoluene in applications in which the scintillator is exposed to high doses because of the increased resistance of the rubber to the formation of blue-absorbing color centers. Work by Bowen, et al., and Harmon, et al., demonstrated their properties under gamma/x-ray irradiation, and Bell, et al. have shown their response to thermal neutrons. This last work, however, provided an example of a silicone in which both the boron and the scintillator were contained in the rubber as solutes, a formulation which led to the precipitation of solids and sublimation of the boron component. In the present work we describe a scintillator in which the boron is chemically bonded to the siloxane and so avoids the problem of precipitation and loss of boron to sublimation. Material containing up to 18% boron, by weight, was prepared, mounted on photomultipliers, and exposed to both neutron and gamma fluxes. Pulse height spectra showing the neutron and photon response were obtained, and although the light output was found to be much poorer than from samples in which boron was dissolved, the higher boron concentrations enabled essentially 100% neutron absorption in only a few millimeters' thickness of rubber.

  8. Density separation of boron particles. Final report

    International Nuclear Information System (INIS)

    Smith, R.M.

    1980-04-01

    A density distribution much broader than expected was observed in lots of natural boron powder supplied by two different sources. The material in both lots was found to have a rhombohedral crystal structure, and the only other parameters which seemed to account for such a distribution were impurities within the crystal structure and varying isotopic ratios. A separation technique was established to isolate boron particles in narrow densty ranges. The isolated fractions were subsequently analyzed for B 10 and total boron content in an effort to determine whether selective isotopic enrichment and nonhomogeneous impurity distribution were the causes for the broad density distribution of the boron powders. It was found that although the B 10 content remained nearly constant around 18%, the total boron content varied from 37.5 to 98.7%. One of the lots also was found to contain an apparently high level of alpha rhombohedral boron which broadened the density distribution considerably. During this work, a capability for removing boron particles containing gross amounts of impurities and, thereby, improving the overall purity of the remaining material was developed. In addition, the separation technique used in this study apparently isolated particles with alpha and beta rhombohedral crystal structures, although the only supporting evidence is density data

  9. Anisotropic nanomaterials preparation, properties, and applications

    CERN Document Server

    Li, Quan

    2015-01-01

    In this book anisotropic one-dimensional and two-dimensional nanoscale building blocks and their assembly into fascinating and qualitatively new functional structures embracing both hard and soft components are explained. Contributions from leading experts regarding important aspects like synthesis, assembly, properties and applications of the above materials are compiled into a reference book. The anisotropy, i.e. the direction-dependent physical properties, of materials is fascinating and elegant and has sparked the quest for anisotropic materials with useful properties. With such a curiosi

  10. Modelling of CMUTs with Anisotropic Plates

    DEFF Research Database (Denmark)

    la Cour, Mette Funding; Christiansen, Thomas Lehrmann; Jensen, Jørgen Arendt

    2012-01-01

    Traditionally, CMUTs are modelled using the isotropic plate equation and this leads to deviations between analytical calculations and FEM simulations. In this paper, the deflection profile and material parameters are calculated using the anisotropic plate equation. It is shown that the anisotropic...... calculations match perfectly with FEM while an isotropic approach causes up to 10% deviations in deflection profile. Furthermore, we show how commonly used analytic modelling methods such as static calculations of the pull-in voltage and dynamic modelling through an equivalent circuit representation can...

  11. Proceedings of workshop on 'Boron Chemistry and Boron Neutron Capture Therapy'

    International Nuclear Information System (INIS)

    Kitaoka, Y.

    1991-07-01

    This volume contains the proceedings of the 3rd Workshop on 'the Boron Chemistry and Boron Neutron Capture Therapy' held on February 12, in 1991. In this workshop, our attention was focused on the chemical nature of boron compounds and the boron neutron capture therapy (BNCT). First, clinical experiences of BNCT in KURRI in 1990 and 1991 were reported (Chap. 3). The feasibility of the gadolinium neutron capture therapy for brain tumors was discussed (Chap. 4). In the chemical field, a rapid spectrophotometric determination of trace amounts of borons in biological samples is described (Chap. 5). The chemical behaviours of p-boronophenylalanine and its analogs in aqueous solutions were investigated by a paper electrophoresis and infrared spectroscopy (Chap. 6). On the molecular design and synthesis of new boron carriers for BNCT, several new synthetic methods for B-10 containing nucleoside derivatives were shown (Chap. 7). (author)

  12. Electrical and thermal conductivities of the graphene, boron nitride and silicon boron honeycomb monolayers

    Energy Technology Data Exchange (ETDEWEB)

    Mousavi, Hamze, E-mail: hamze.mousavi@gmail.com [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of); Khodadadi, Jabbar [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of); Moradi Kurdestany, Jamshid [Department of Physics and Astronomy, University of Missouri, Columbia, MO 65201 (United States); Yarmohammadi, Zahra [Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of)

    2016-11-25

    Density of states, electrical and thermal conductivities of electrons in graphene, boron nitride and silicon boron single sheets are studied within the tight-binding Hamiltonian model and Green's function formalism, based on the linear response theory. The results show that while boron nitride keeps significantly the lowest amounts overall with an interval of zero value in low temperatures, due to its insulating nature, graphene exhibits the most electrical and thermal conductivities, slightly higher than silicon boron except for low temperature region where the latter surpasses, owing to its metallic character. This work might make ideas for creating new electronic devices based on honeycomb nanostructures. - Highlights: • Electronic properties of graphene, silicon boron, and boron nitride planes are compared. • Tight-binding Hamiltonian model and Green's function formalism are implemented. • This work might make ideas for creating new electronic devices based on honeycomb nanostructures.

  13. The determination of boron and carbon in reactor grade boron carbide

    International Nuclear Information System (INIS)

    Crossley, D.; Wood, A.J.; McInnes, C.A.J.; Jones, I.G.

    1978-09-01

    The sealed tube method of dissolution at high temperature and pressure has been successfully applied in the analysis of reactor grade boron carbide for the determination of boron. A 50 mg sample of boron carbide is completely dissolved by heating with concentrated nitric acid in a sealed tube at 300 0 C. The boron content of the resultant sample solution is determined by the mannitol potentiometric titration method. The precision of the method for the determination of 2.5 mg of boron using the Harwell automatic potentiometric titrator is 0.2% (coefficient of variation). The carbon content of a boron carbide sample is determined by combustion of the sample at 1050 0 C in a stream of oxygen using vanadium pentoxide to ensure the complete oxidation of the sample. The carbon dioxide produced from the sample is measured manometrically and the precision of the method for the determination of 4 mg of carbon is 0.4% (coefficient of variation). (author)

  14. Progress in study of a medical reactor for boron neutron capture therapy

    International Nuclear Information System (INIS)

    Sasaki, Makoto; Hirota, Jitsuya; Tamao, Shigeo; Kanda, Keiji; Mishima, Yutaka.

    1993-01-01

    A design study of a medical reactor for Boron Neutron Capture Therapy has made progress. Main specifications of the reactor are as follows; thermal power of 2 MW, water cooling by natural convection, semitight core of hexagonal lattice, UO 2 fuel rod of 9.5 mm diameter and no refueling in the reactor-life. Three horizontal and one vertical neutron beam holes are to be provided for simultaneous treatments by thermal and epithermal neutrons and for further biomedical research. The design objectives for the beam holes are to deliver the therapeutic doses in a modest time (30 to 60 min) with minimal fast neutron and gamma contaminants. The n-γ coupling Sn transport calculations have been carried out using n-21 and γ-9 group cross sections on 2-dim. practical models. The calculated results indicate that the design objectives will be achievable even if the thermal power of the reactor is reduced to 1 MW. (author)

  15. Real-time oxide evolution of copper protected by graphene and boron nitride barriers

    DEFF Research Database (Denmark)

    Galbiati, Miriam; Stoot, Adam Carsten; Mackenzie, David

    2017-01-01

    Applying protective or barrier layers to isolate a target item from the environment is a common approach to prevent or delay its degradation. The impermeability of two-dimensional materials such as graphene and hexagonal boron nitride (hBN) has generated a great deal of interest in corrosion...... and material science. Owing to their different electronic properties (graphene is a semimetal, whereas hBN is a wide-bandgap insulator), their protection behaviour is distinctly different. Here we investigate the performance of graphene and hBN as barrier coatings applied on copper substrates through a real......-time study in two different oxidative conditions. Our findings show that the evolution of the copper oxidation is remarkably different for the two coating materials....

  16. Synthesis and pH-dependent assembly of isotropic and anisotropic gold nanoparticles functionalized with hydroxyl-bearing amino acids

    Science.gov (United States)

    Swami, Anuradha; Mittal, Sherry; Chopra, Adity; Sharma, Rohit K.; Wangoo, Nishima

    2018-03-01

    In recent years, the synthesis of gold nanostructures of controllable shapes and dimensions has become a subject of intensive and interesting studies. Especially, anisotropic gold nanostructures such as nanoplates, nanoribbons, nanoprisms and nanorods have attracted much attention due to their striking optical properties and promising applications in electronics, photonics, sensing and biomedicine. Keeping this in mind, in the present report, an unprecedented, facile and one pot synthesis of isotropic (spherical) and anisotropic (triangular, pentagonal, hexagonal, rod shaped) gold nanomaterials via pH controlled shape modulation using hydroxyl moeity containing α-amino acids (Serine, Threonine, Tyrosine) as both reducing and capping agents is reported. The synthesized nanostructures have been further characterized by UV-Vis spectroscopy and transmission electron microscopy. It was deduced from these studies that pH played a key role in the anisotropic growth of gold nanostructures. These gold nanoparticles can be further used for applications in biosensing, plasmonics, and electrocatalysis and others involving surface enhanced raman scattering. This study is therefore, important from the point of view of using amino acids for the synthesis of gold nanoparticles of different shapes and sizes leading towards the development of inventive biosensors and biocompatible nanoconstructs.

  17. Quantitative boron detection by neutron transmission method

    International Nuclear Information System (INIS)

    Okka, M.; Genceli, M.; Eren, E.; Bayulken, A.

    2008-01-01

    //Quantitative boron detection is mainly performed by chemical methods like colorimetric titration. High neutron absorption cross section of natural boron makes attractive its detection by absorption measurements. This work is an extension of earlier investigations where neutron radiography technique was used for boron detection. In the present investigation, the neutron absorption rate of boron containing solutions is the way to measure quantitatively the boron content of the solutions. The investigation was carried out in Istanbul TRIGA Mark-II reactor. In the end of the experiments, it was observed that even |ppw| grade boron in aqueous solution can be easily detected. The use of this method is certainly very useful for boron utilizing industries like glass and steel industries.The major disadvantage of the method is the obligation to use always aqueous solutions to be able to detect homogeneously the boron content. Then, steel or glass samples have to be put first in an appropriate solution form. The irradiation of steel samples can give the distribution of boron by the help of a imaging and this suggested method will give its quantitative measurement. The superiority of this method are its quick response time and its accuracy. To test this accuracy, a supposed unknown , solution of boric acid is irradiated and then calculated by the help of the calibration curve. The measured value of boric acid was 0.89 mg and the calculated value was found to be 0.98 mg which gives an accuracy of 10 %. It was also seen that the method is more accurate for low concentration. (authors)

  18. Boron Isotope Fractionation in Bell Pepper

    OpenAIRE

    Geilert, Sonja; Vogl, Jochen; Rosner, Martin; Voerkelius, Susanne; Eichert, Thomas

    2015-01-01

    Various plant compartments of a single bell pepper plant were studied to verify the variability of boron isotope composition in plants and to identify possible intra-plant isotope fractionation. Boron mass fractions varied from 9.8 mg/kg in the fruits to 70.0 mg/kg in the leaves. Boron (B) isotope ratios reported as δ11B ranged from -11.0‰ to +16.0‰ (U ≤ 1.9‰, k=2) and showed a distinct trend to heavier δ11B values the higher the plant compartments were located in the plant. A fractionatio...

  19. Study on plasma sprayed boron carbide coating

    Science.gov (United States)

    Zeng, Yi; Lee, Soo W.; Ding, Chuanxian

    2002-03-01

    The microstructure, phase composition, and mechanical properties of boron carbide coatings formed by atmospheric plasma spraying (APS) are studied in the present work. The boron carbide coating with high microhardness and low porosity could be produced by APS. The decomposition of boron carbide powder during the plasma spray process would result in the formation of the BxC phase and an increase of the carbon phase, which is confirmed by transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction results.

  20. The influence of boron on the crystal structure and properties of mullite. Investigations at ambient, high-pressure, and high-temperature conditions

    Energy Technology Data Exchange (ETDEWEB)

    Luehrs, Hanna

    2013-11-21

    Mullite is one of the most important synthetic compounds for advanced structural and functional ceramic materials. The crystal structure of mullite with the composition Al{sub 2}[Al{sub 2+2x}Si{sub 2-2x}]O{sub 10-x} can incorporate a large variety of foreign cations, including (amongst others) significant amounts of boron. However, no chemical or crystal structure analyses of boron-mullites (B-mullites) were available prior to this work, thus representing the key aspects of this thesis. Furthermore, the influence of boron on selected properties of mullite under ambient, high-temperature, and high-pressure conditions are addressed. Starting from a 3:2 mullite composition (Al{sub 4.5}Si{sub 1.5}O{sub 9.75}), the initial hypothesis for this study was a 1:1 isomorphous replacement of silicon by boron according to the coupled substitution mechanism: 2 Si{sup 4+} + O{sup 2-} → 2 B{sup 3+} + □. Based on a series of compounds synthesized from sol-gel derived precursors at ambient pressure and 1200 C, the formation conditions and physical properties of B-mullites were investigated. The formation temperature for B-mullites decreases with increasing boron-content, as revealed by thermal analyses. An anisotropic development of lattice parameters is observed: Whereas lattice parameters a and b only exhibit minor changes, a linear relationship between lattice parameter c and the amount of boron in the crystal structure was established, on the basis of prompt gamma activation analyses (PGAA) and Rietveld refinements. According to this relationship about 15% of the silicon in mullite can be replaced by boron yielding single-phase B-mullite. B-mullites with significantly higher (∝ factor 3) boron-contents in the mullite structure were also observed but the respective samples contain alumina impurities. Fundamental new details regarding the response of B-mullite to high-temperature and highpressure are presented in this thesis. On the one hand, long-term thermal stability at

  1. Characterization of boron tolerant bacteria isolated from a fly ash dumping site for bacterial boron remediation.

    Science.gov (United States)

    Edward Raja, Chellaiah; Omine, Kiyoshi

    2013-08-01

    Boron is an essential micronutrient for plants, but can above certain concentrations be toxic to living organisms. A major environmental concern is the removal of boron from contaminated water and fly ash. For this purpose, the samples were collected from a fly ash dumping site, Nagasaki prefecture, Japan. The chemical characteristics and heavy metal concentration of the samples were performed by X-ray fluorescent analysis and leaching test. For bacterial analysis, samples were collected in sterile plastic sheets and isolation was carried out by serial dilution method. The boron tolerant isolates that showed values of maximum inhibitory concentration toward boron ranging from 100 to 260 mM level were screened. Based on 16S rRNA sequencing and phylogenetic analysis, the isolates were most closely related to the genera Bacillus, Lysinibacillus, Microbacterium and Ralstonia. The boron tolerance of these strains was also associated with resistant to several heavy metals, such as As (III), Cr (VI), Cd, Cu, Pb, Ni, Se (III) and Zn. Indeed, these strains were arsenic oxidizing bacteria confirmed by silver nitrate test. These strains exhibited their salt resistances ranging from 4 to 15 % were determined in Trypticase soy agar medium. The boron tolerant strains were capable of removing 0.1-2.0 and 2.7-3.7 mg l(-1) boron from the medium and fly ash at 168 h. Thus, we have successfully identified the boron tolerant and removal bacteria from a fly ash dumping site for boron remediation.

  2. A Variational Approach to Perturbed Discrete Anisotropic Equations

    Directory of Open Access Journals (Sweden)

    Amjad Salari

    2016-01-01

    Full Text Available We continue the study of discrete anisotropic equations and we will provide new multiplicity results of the solutions for a discrete anisotropic equation. We investigate the existence of infinitely many solutions for a perturbed discrete anisotropic boundary value problem. The approach is based on variational methods and critical point theory.

  3. The Effect of Anisotropic Scatter on Atmospheric Neutron Transport

    Science.gov (United States)

    2015-03-26

    THE EFFECT OF ANISOTROPIC SCATTER ON ATMOSPHERIC NEUTRON TRANSPORT THESIS MARCH 2015 Nicholas J...iii AFIT-ENP-MS-15-M-085 THE EFFECT OF ANISOTROPIC SCATTER ON ATMOSPHERIC NEUTRON TRANSPORT THESIS Presented to the...EFFECT OF ANISOTROPIC SCATTER ON ATMOSPHERIC NEUTRON TRANSPORT Nicholas J. McIntee, BSE Major, USA Committee Membership: Dr. Kirk A. Mathews

  4. Hypersurface-homogeneous cosmological models with anisotropic ...

    Indian Academy of Sciences (India)

    2016-12-05

    Dec 5, 2016 ... DOI 10.1007/s12043-016-1317-4. Hypersurface-homogeneous cosmological models with anisotropic dark energy in Saez–Ballester theory of gravitation. M K VERMA1, S CHANDEL2 and SHRI RAM2,∗. 1Department of Mathematics, Baba Banarasi Das National Institute of Technology & Management,.

  5. Anisotropic Hanle line shape via magnetothermoelectric phenomena

    NARCIS (Netherlands)

    Das, Kumar; Dejene, Fasil; van Wees, Bart; Vera Marun, Ivan

    2016-01-01

    We observe anisotropic Hanle line shape with unequal in-plane and out-of-plane nonlocal signals for spin precession measurements carried out on lateral metallic spin valves with transparent interfaces. The conventional interpretation for this anisotropy corresponds to unequal spin relaxation times

  6. Adaptive slices for acquisition of anisotropic BRDF

    Czech Academy of Sciences Publication Activity Database

    Vávra, Radomír; Filip, Jiří

    (2018) ISSN 2096-0433 R&D Projects: GA ČR GA17-18407S Institutional support: RVO:67985556 Keywords : anisotropic BRDF * slice * sampling Subject RIV: BD - Theory of Information http://library.utia.cas.cz/separaty/2018/RO/vavra-0486116.pdf

  7. Theory of anisotropic diamagnetism, local moment magnetization ...

    Indian Academy of Sciences (India)

    Theory of anisotropic diamagnetism, local moment magnetization and carrier spin-polarization in Pb1-EuTe ... Gopalpur 761 002, India; Department of Physics, Jagannath Institute for Technology and Management, Parlakhemundi 761 211, India; Department of Physics, Berhampur University, Berhampur 760 007, India ...

  8. Hypersurface-homogeneous cosmological models with anisotropic ...

    Indian Academy of Sciences (India)

    The present study deals with hypersurface-homogeneous cosmological models with anisotropic dark energy in Saez–Ballester theory of gravitation. Exact solutions of field equations are obtained by applying a special law of variation of Hubble's parameter that yields a constant negative value of the deceleration parameter.

  9. Minimally coupled scalar field cosmology in anisotropic ...

    Indian Academy of Sciences (India)

    We study a spatially homogeneous and anisotropic cosmological model in the Einstein gravitational theory with a minimally coupled scalar field. We consider a non-interacting combination of scalar field and perfect fluid as the source of matter components which are separately conserved. The dynamics of cosmic scalar ...

  10. Algebraic solution of an anisotropic nonquadratic potential

    International Nuclear Information System (INIS)

    Boschi Filho, H.; Vaidya, A.N.

    1990-06-01

    We show that an anisotropic nonquadratic potential, for which a path integral treatment had been recently discussed in the literature, possesses the (SO(2,1)xSO(2,1))ΛSO(2,1) dynamical symmetry and constructs its Green function algebraically. A particular case which generates new eigenvalues and eigenfunctions is also discussed. (author). 11 refs

  11. Modelling anisotropic water transport in polymer composite

    Indian Academy of Sciences (India)

    This work reports anisotropic water transport in a polymer composite consisting of an epoxy matrix reinforced with aligned triangular bars made of vinyl ester. By gravimetric experiments, water diffusion in resin and polymer composites were characterized. Parameters for Fickian diffusion and polymer relaxation models were ...

  12. A new algorithm for anisotropic solutions

    Indian Academy of Sciences (India)

    We establish a new algorithm that generates a new solution to the Einstein field equations, with an anisotropic matter distribution, from a seed isotropic solution. The new solution is expressed in terms of integrals of an isotropic gravitational potential; and the integration can be completed exactly for particular isotropic seed ...

  13. Acoustic reflection from the boundary of anisotropic ...

    Indian Academy of Sciences (India)

    Vertical slownesses of waves at a boundary of an anisotropic thermoviscoelastic medium are calculated as roots of a polynomial equation of degree eight. Out of the corresponding eight waves, the four, which travel towards the boundary are identified as upgoing waves. Remaining four waves travel away from the boundary ...

  14. Ray tracing in anisotropic media with singularities

    Czech Academy of Sciences Publication Activity Database

    Vavryčuk, Václav

    2001-01-01

    Roč. 145, č. 1 (2001), s. 265-276 ISSN 0956-540X R&D Projects: GA ČR GA205/00/1350 Institutional research plan: CEZ:AV0Z3012916 Keywords : anisotropic media * ray tracing * singularities Subject RIV: DC - Siesmology, Volcanology, Earth Structure Impact factor: 1.366, year: 2001

  15. Minimally coupled scalar field cosmology in anisotropic ...

    Indian Academy of Sciences (India)

    2017-01-03

    Jan 3, 2017 ... a phantom field [24,25], quintom [26,27], k-essence. [28], tachyon [29] and so forth. It is well known that the evolution of the Uni- verse admits a scenario of anisotropic expansion and gains a lot of interest, under the light of the recently announced Planck Probe results [7]. The Bianchi models, which describe ...

  16. Modelling anisotropic water transport in polymer composite ...

    Indian Academy of Sciences (India)

    Abstract. This work reports anisotropic water transport in a polymer composite consisting of an epoxy matrix reinforced with aligned triangular bars made of vinyl ester. By gravimetric experiments, water diffusion in resin and polymer composites were characterized. Parameters for Fickian diffusion and polymer relaxation ...

  17. The method of images for anisotropic media

    International Nuclear Information System (INIS)

    Iosilevskii, Ya.A.

    1978-01-01

    The method of images is suggested to construct a scalar macroscopic field (dynamic or static) of a point source in an anisotropic half-space or flat slab. The field is found for an arbitrary orientation of the boundaries with respect to the crystallographic axes. (Auth.)

  18. Boron Doped Graphene 3-Dimensi untuk Superkapasitor Kapasitas Tinggi

    Directory of Open Access Journals (Sweden)

    Nurlia Pramita Sari

    2017-08-01

    Full Text Available Chemical doping is an effective approach to improve the property of carbon material. In this study boron doped graphene with 3D structure used as the electrode was investigated. Boron doped graphene was prepared through freeze-dried process followed by pyrolysis of graphene oxide (GO with three types of chemical substances; boron oxide, boric acid, and boron powder in an argon and hydrogen atmosphere at 1000 C for 3 hours. The difference of chemical composition generated a different percentage of boron bond with GO. The results shows that the highest electrochemical performance was found in graphene samples with the addition of boric acid (BA 86 F/g, followed by boron oxide (BO 59.2 F/g, and boron powder (BP 2 F/g. It can be caused by boron concentration bound with graphene. The higher concentration of boron could be increased the electrochemical performance due to better of ion movement.

  19. Breaking the icosahedra in boron carbide.

    Science.gov (United States)

    Xie, Kelvin Y; An, Qi; Sato, Takanori; Breen, Andrew J; Ringer, Simon P; Goddard, William A; Cairney, Julie M; Hemker, Kevin J

    2016-10-25

    Findings of laser-assisted atom probe tomography experiments on boron carbide elucidate an approach for characterizing the atomic structure and interatomic bonding of molecules associated with extraordinary structural stability. The discovery of crystallographic planes in these boron carbide datasets substantiates that crystallinity is maintained to the point of field evaporation, and characterization of individual ionization events gives unexpected evidence of the destruction of individual icosahedra. Statistical analyses of the ions created during the field evaporation process have been used to deduce relative atomic bond strengths and show that the icosahedra in boron carbide are not as stable as anticipated. Combined with quantum mechanics simulations, this result provides insight into the structural instability and amorphization of boron carbide. The temporal, spatial, and compositional information provided by atom probe tomography makes it a unique platform for elucidating the relative stability and interactions of primary building blocks in hierarchically crystalline materials.

  20. Boron adsorption on hematite and clinoptilolite

    International Nuclear Information System (INIS)

    Gainer, G.M.

    1993-01-01

    This thesis describes experiments performed to determine the suitability of boron as a potential reactive tracer for use in saturated-zone C-well reactive tracer studies for the Yucca Mountain Project (YMP). Experiments were performed to identify the prevalent sorption mechanism of boron and to determine adsorption of boron on hematite and clinoptilolite as a function of pH. These minerals are present in the Yucca Mountain tuff in which the C-well studies will be conducted. Evaluation of this sorption mechanism was done by determining the equilibration time of boron-mineral suspensions, by measuring changes in equilibrium to titrations, and by measuring electrophoretic mobility. Experiments were performed with the minerals suspended in NaCl electrolytes of concentrations ranging from 0.1 N NaCl to 0.001 N NaCl. Experimentalconditions included pH values between 3 and 12 and temperature of about 38 degrees C

  1. Determination of boron in amorphous alloys

    Energy Technology Data Exchange (ETDEWEB)

    Grazhulene, S.S.; Grossman, O.V.; Kuntscher, K.K.; Malygina, L.I.; Muller, E.N.; Telegin, G.F.

    1985-10-01

    In the determination of boron in amorphous alloys containingFe, Co, B, Si, Ni, and P having unusal magnetic and electrical properties, precise analysis and rapid analysis are necessary. To improve the metrological properties of the existing procedure, to find a rapid determination of boron in amorphous alloys, and to verify the accuracy of the results, in the present work the optimization of the photometric determination after extraction of the BF/sup -//sub 4/ ion pair with methylene blue has been studied, and a boron determination by flame photometry using selective methylation has been developed. The determination of boron by the flame photometric and spectrophotometric methods is shown. When a highly precise determination is needed, the spectrophotometric procedure can be used. This procedure is distinguished by its labor intensity and duration. When the need for reproducibility is less severe, the rapid flame photometric procedure is best.

  2. Boron precipitates in ion implanted silicon

    International Nuclear Information System (INIS)

    Wu, W.K.; Washburn, J.

    1975-03-01

    Long rod-like defects are observed in ion implanted silicon when boron is present either as a prior dopant addition or as the implanted species. Results of recent work indicates that these defects have the characteristics of narrow extrinsic dipoles or elongated dislocation loops and that there are two different types along each of the six (110) directions. An annealing kinetics method has been used to identify the nature of these defects formed during post-implantation annealing in boron ion (100 keV) implanted silicon irradiated at room temperature to a dose of 2 x 10 14 /cm 2 . It is concluded that at least two different kinds of rod-like defects exist in boron ion implanted silicon. From the activation energy for shrinkage, it is also concluded that one type (anti A) is composed largely of boron atoms. (U.S.)

  3. Spectromicroscopy in Boron Neutron Capture Therapy Research

    Science.gov (United States)

    Gilbert, Benjamin; Redondo, Jose; Andres, Roger; Suda, Takashi; Neumann, Michael; Steen, Steffi; Gabel, Detlef; Mercanti, Delio; Ciotti, Teresa; Perfetti, Paolo; Margaritondo, Giorgio; de Stasio, Gelsomina

    1998-03-01

    The MEPHISTO synchrotron imaging spectromicroscope can analyse ashed cells or tissue sections to reveal the microdistribution of trace elements. MEPHISTO performs core level x-ray absorption spectroscopy with synchrotron radiation, and uses an electron optics system to provide magnified photoelectron images. An application of the MEPHISTO spectromicroscope is in boron neutron capture therapy (BNCT). BNCT is a binary cancer therapy that will selectively destroy cancer cells provided that compounds containing a boron isotope are selectively accumulated in tumor tissue. Important factors for the success of BNCT include the ability to target every cancer cell, and the distribution of boron inside the cell. To investigate the boron distribution in tissue, sections of human glioblastoma containing a BNCT compound, and stained with nickel against a protein found in the nuclei of proliferating (cancer) cells, were studied with MEPHISTO.

  4. Behaviour of boron in Mandovi estuary (Goa)

    Digital Repository Service at National Institute of Oceanography (India)

    Shirodkar, P.V.; Anand, S.P.

    and alkalinity gave positive correlations with a linear variation. Though the overall behavioural pattern of boron indicated non-conservative nature, it showed a quasi-conservative character during premonsoon and a non-conservative during rest of the seasons...

  5. Boron

    Science.gov (United States)

    ... feeding women over 19 years of age. For adolescents 14 to 18 years of age and pregnant or breast-feeding women 14 to 18 years of age, the ... be expected, is 17 mg per day for adolescents 14 to 18 years of age and pregnant or breast-feeding women 14 to 18 years of age. For ...

  6. Anisotropic power-law k-inflation

    Science.gov (United States)

    Ohashi, Junko; Soda, Jiro; Tsujikawa, Shinji

    2013-11-01

    It is known that power-law k-inflation can be realized for the Lagrangian P=Xg(Y), where X=-(∂ϕ)2/2 is the kinetic energy of a scalar field ϕ and g is an arbitrary function in terms of Y=Xeλϕ/Mpl (λ is a constant and Mpl is the reduced Planck mass). In the presence of a vector field coupled to the inflaton with an exponential coupling f(ϕ)∝eμϕ/Mpl, we show that the models with the Lagrangian P=Xg(Y) generally give rise to anisotropic inflationary solutions with Σ/H=constant, where Σ is an anisotropic shear and H is an isotropic expansion rate. Provided these anisotropic solutions exist in the regime where the ratio Σ/H is much smaller than 1, they are stable attractors irrespective of the forms of g(Y). We apply our results to concrete models of k-inflation such as the generalized dilatonic ghost condensate and the Dirac-Born-Infeld model and we numerically show that the solutions with different initial conditions converge to the anisotropic power-law inflationary attractors. Even in the de Sitter limit (λ→0) such solutions can exist, but in this case the null energy condition is generally violated. The latter property is consistent with the Wald’s cosmic conjecture stating that the anisotropic hair does not survive on the de Sitter background in the presence of matter respecting the dominant/strong energy conditions.

  7. Boron-nitride and aluminum-nitride "Pringles" and flapping motion.

    Science.gov (United States)

    Fa, Wei; Chen, Shuang; Zeng, Xiao Cheng

    2014-07-18

    Motivated by the recent successful synthesis of a new nanocarbon, namely, a warped, double-concave graphene "Pringle" (Nat. Chem., 2013, 5, 739), we investigate properties of warped boron-nitride (BN) and aluminum-nitride (AlN) analogues, i.e., the non-planar B40N40H30 and Al40N40H30 "Pringles" using density functional theory (DFT) calculations. Particular attention is placed on the effect of non-hexagonal rings on the stability and physical properties of BN and AlN Pringles. We find that the warped BN and AlN Pringles with one pentagon and five heptagons are stable without imaginary frequencies. Both the warped B40N40H30 and Al40N40H30 Pringles are expected to be flexible in solution as both can periodically change their shape in a dynamic "flapping" fashion due to their much lower activation barrier of racemization compared to that of the C80H30 counterpart. Since the warped B40N40H30 possesses a smaller HOMO-LUMO gap than the planar B39N39H30, it is expected that incorporating non-hexagonal ring defects by design can be an effective way to modify electronic properties of BN-based nanoplates.

  8. Abrasive slurry composition for machining boron carbide

    Science.gov (United States)

    Duran, Edward L.

    1985-01-01

    An abrasive slurry particularly suited for use in drilling or machining boron carbide consists essentially of a suspension of boron carbide and/or silicon carbide grit in a carrier solution consisting essentially of a dilute solution of alkylaryl polyether alcohol in octyl alcohol. The alkylaryl polyether alcohol functions as a wetting agent which improves the capacity of the octyl alcohol for carrying the grit in suspension, yet without substantially increasing the viscosity of the carrier solution.

  9. Boron-rich oligomers for BNCT

    International Nuclear Information System (INIS)

    Gula, M.; Perleberg, O.; Gabel, D.

    2000-01-01

    The synthesis of two BSH derivatives is described, which can be used for oligomerization in DNA-synthesizers. Synthesis pathways lead to final products in five and six steps, respectively. Because of chirality interesting results were expected. NMR-measurements confirm this expectation. Possible oligomers with high concentrations of boron can be attached to biomolecules. These oligomers can be explored with several imaging methods (EELS, PEM) to determine the lower detection limit of boron with these methods. (author)

  10. Discharge cleaning on TFTR after boronization

    International Nuclear Information System (INIS)

    Mueller, D.; Dylla, H.F.; LaMarche, P.H.; Bell, M.G.; Blanchard, W.; Bush, C.E.; Gentile, C.; Hawryluk, R.J.; HIll, K.W.; Janos, A.C.; Jobes, F.C; Owens, D.K.; Pearson, G.; Schivell, J.; Ulrickson, M.A.; Vannoy, C.; Wong, K.L.

    1991-05-01

    At the beginning of the 1990 TFTR experimental run, after replacement of POCO-AXF-5Q graphite tiles on the midplane of the bumper limiter by carbon fiber composite (CFC) tiles and prior to any Pulse Discharge Cleaning (PDC), boronization was performed. Boronization is the deposition of a layer of boron and carbon on the vacuum vessel inner surface by a glow discharge in a diborane, methane and helium mixture. The amount of discharge cleaning required after boronization was substantially reduced compared to that which was needed after previous openings when boronization was not done. Previously, after a major shutdown, about 10 5 low current (∼20 kA) Taylor Discharge Cleaning (TDC) pulses were required before high current (∼400 kA) aggressive Pulse Discharge Cleaning (PDC) pulses could be performed successfully. Aggressive PDC is used to heat the limiters from the vessel bakeout temperature of 150 degrees C to 250 degrees C for a period of several hours. Heating the limiters is important to increase the rate at which water is removed from the carbon limiter tiles. After boronization, the number of required TDC pulses was reduced to <5000. The number of aggressive PDC pulses required was approximately unchanged. 14 refs., 1 tab

  11. Thermodynamic Studies of Decane on Boron Nitride and Graphite Substrates Using Synchrotron Radiation and Molecular Dynamics Simulations

    Science.gov (United States)

    Strange, Nicholas; Arnold, Thomas; Forster, Matthew; Parker, Julia; Larese, J. Z.; Diamond Light Source Collaboration; University of Tennessee Team

    2014-03-01

    Hexagonal boron nitride (hBN) has a lattice structure similar to that of graphite with a slightly larger lattice parameter in the basal plane. This, among other properties, makes it an excellent substrate in place of graphite, eliciting some important differences. This work is part of a larger effort to examine the interaction of alkanes with magnesium oxide, graphite, and boron nitride surfaces. In our current presentation, we will discuss the interaction of decane with these surfaces. Decane exhibits a fully commensurate structure on graphite and hBN at monolayer coverages. In this particular experiment, we have examined the monolayer structure of decane adsorbed on the basal plane of hBN using synchrotron x-ray radiation at Diamond Light Source. Additionally, we have examined the system experimentally with volumetric isotherms as well as computationally using molecular dynamics simulations. The volumetric isotherms allow us to calculate properties which provide important information about the adsorbate's interaction with not only neighboring molecules, but also the interaction with the adsorbent boron nitride.

  12. Localization effects in the Auger spectra of ring nitrogen systems: Pyridine, poly(2-vinyl)pyridine, borazine, and boron nitride

    International Nuclear Information System (INIS)

    Rye, R.R.; Kelber, J.A.; Kellogg, G.E.; Nebesny, K.W.; Lichtenberger, D.L.

    1987-01-01

    The N(KVV) Auger spectra of gas phase pyridine (C 5 H 5 N) and borazine (B 3 N 3 H 6 ), and of solid phase poly(2-vinyl)pyridine (PVP) and hexagonal boron nitride [(BN)/sub x/] are reported and analyzed. The data indicate two Auger ''fingerprint'' types of nitrogen. Ammonia (NH 3 ) is the prototype for the first, where three of the five valence electrons are σ bonding and the other two are the lone pair. This localized electronic structure gives rise to relatively sharp features in the N(KVV) spectrum. Typical of the second fingerprint type is pyridine, where there are two σ bonding electrons, a lone pair of electrons, and one electron contributing to the delocalized π system. Theoretical nitrogen Auger transition energies and intensities are calculated for pyridine to demonstrate the general origin of the overlapping features in the relatively broad N(KVV) spectrum of this molecule. PVP fits into the second fingerprint type while borazine and boron nitride give nitrogen Auger spectra more like ammonia. Approximate calculations using the equivalent core concept are used to clarify the relationship between the ammonia, borazine, and boron nitride spectra. It is shown that in these systems the initial Auger state (core--hole) largely localizes the bonds and lone pair on the nitrogen. The Auger spectra show that it is the σ, π and nonbonding orbital characters that provide the Auger fingerprint

  13. Hexagon functions and the three-loop remainder function

    Energy Technology Data Exchange (ETDEWEB)

    Dixon, Lance J.; Drummond, James M.; von Hippel, Matt; Pennington, Jeffrey

    2013-12-01

    We present the three-loop remainder function, which describes the scattering of six gluons in the maximally-helicity-violating configuration in planar NN = 4 super-Yang-Mills theory, as a function of the three dual conformal cross ratios. The result can be expressed in terms of multiple Goncharov polylogarithms. We also employ a more restricted class of hexagon functions which have the correct branch cuts and certain other restrictions on their symbols. We classify all the hexagon functions through transcendental weight five, using the coproduct for their Hopf algebra iteratively, which amounts to a set of first-order differential equations. The three-loop remainder function is a particular weight-six hexagon function, whose symbol was determined previously. The differential equations can be integrated numerically for generic values of the cross ratios, or analytically in certain kinematic limits, including the near-collinear and multi-Regge limits. These limits allow us to impose constraints from the operator product expansion and multi-Regge factorization directly at the function level, and thereby to fix uniquely a set of Riemann ζ valued constants that could not be fixed at the level of the symbol. The near-collinear limits agree precisely with recent predictions by Basso, Sever and Vieira based on integrability. The multi-Regge limits agree with the factorization formula of Fadin and Lipatov, and determine three constants entering the impact factor at this order. We plot the three-loop remainder function for various slices of the Euclidean region of positive cross ratios, and compare it to the two-loop one. For large ranges of the cross ratios, the ratio of the three-loop to the two-loop remainder function is relatively constant, and close to -7.

  14. Response of hexagonal fuel assembly coupled with internal hydrodynamics

    International Nuclear Information System (INIS)

    Marchertas, A.H.; Julke, R.T.

    1975-01-01

    For safety considerations of sodium cooled fast breeder reactors the mechanistic accident-initiating conditions must be studied. In previous investigations of such initiating accidents the models assumed axisymmetric configurations and in general neglected the coupling effects with the subassembly boundary. This paper presents a more precise treatment of the subassembly boundary and also provides feedback of the boundary response to the pressure source. This is accomplished by marking use of two computer codes: REXCO-HT and SADCAT. The internal hydrodynamics of the fuel subassembly is simulated by the REXCO-HT code which possesses certain models of fuel-coolant interactions (MFCI) to be used as a pressure source. The hexagonal boundary of the fuel subassembly is modeled by the SADCAT code. Since both codes involve explicit time integration, coupling between the two is effected at each time step. The pressure at the outside boundary of the REXCO-HT model provides the loading on the SADCAT model. Given the load, the SADCAT model yields the three-dimensional deformation of the hexagonal boundary. With the deformation known, the outside REXCO-HT model boundary is adjusted and the computation cycle of the coupling is completed. In effect, the coupling of the two codes substitutes a cylindrical vessel of the REXCO-HT code by a hexagonal duct. It is shown by the use of this procedure that the assumption of a cylindrical vessel of the same thickness as that of the hexcan is quite erroneous. The maximum deformation of the flat of the hexcan in the illustrative examples is larger by as much as one order of magnitude. The maximum strains at the inside CORNER of the hexcan are also underestimated by a similar amount

  15. Catalytic growth of vertically aligned neutron sensitive {sup 10}Boron nitride nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, Pervaiz, E-mail: pervaizahmad@siswa.um.edu.my, E-mail: Pervaiz-pas@yahoo.com; Khandaker, Mayeen Uddin, E-mail: mu-khandaker@yahoo.com, E-mail: mu-khandaker@um.edu.my; Amin, Yusoff Mohd [University of Malaya, Department of Physics, Faculty of Science (Malaysia); Khan, Ghulamullah [University of Malaya, Department of Mechanical Engineering (Malaysia); Ramay, Shahid M. [King Saud University, Department of Physics and Astronomy, College of Science (Saudi Arabia); Mahmood, Asif [King Saud University, Department of Chemical Engineering, College of Engineering (Saudi Arabia); Amin, Muhammad [University of the Punjab, Department of Physics (Pakistan); Muhammad, Nawshad [Interdisciplinary Research Centre in Biomedical Materials (IRCBM) COMSATS Institute of Information Technology (Pakistan)

    2016-01-15

    {sup 10}Boron nitride nanotubes ({sup 10}BNNTs) are a potential neutron sensing element in a solid-state neutron detector. The aligned {sup 10}BNNT can be used for its potential application without any further purification. Argon-supported thermal CVD is used to achieve vertically aligned {sup 10}BNNT with the help of nucleation sites produced in a thin layer of magnesium–iron alloy deposited at the top of Si substrate. FESEM shows vertically aligned {sup 10}BNNTs with ball-like catalytic tips at top. EDX reveals magnesium (Mg) contents in the tips that refer to catalytic growth of {sup 10}BNNT. HR-TEM shows tubular morphology of the synthesized {sup 10}BNNT with lattice fringes on its outer part having an interlayer spacing of ∼0.34 nm. XPS shows B 1 s and N 1 s peaks at 190.5 and 398 eV that correspond to hexagonal {sup 10}Boron nitride ({sup 10}h-BN) nature of the synthesized {sup 10}BNNT, whereas the Mg kll auger peaks at ∼301 and ∼311 eV represents Mg contents in the sample. Raman spectrum has a peak at 1390 (cm{sup −1}) that corresponds to E{sub 2g} mode of vibration in {sup 10}h-BN.

  16. Hexagon POPE: effective particles and tree level resummation

    Energy Technology Data Exchange (ETDEWEB)

    Córdova, Lucía [Perimeter Institute for Theoretical Physics,Waterloo, Ontario N2L 2Y5 (Canada); Department of Physics and Astronomy & Guelph-Waterloo Physics Institute,University of Waterloo,Waterloo, Ontario N2L 3G1 (Canada)

    2017-01-12

    We present the resummation of the full Pentagon Operator Product Expansion series of the hexagon Wilson loop in planar N=4 SYM at tree level. We do so by considering the one effective particle states formed by a fundamental flux tube excitation and an arbitrary number of the so called small fermions which are then integrated out. We derive the one effective particle measures at finite coupling. By evaluating these measures at tree level and summing over all one effective particle states we reproduce the full 6 point tree level amplitude.

  17. Crossover between tetrahedral and hexagonal structures in liquid water

    Energy Technology Data Exchange (ETDEWEB)

    Chara, Osvaldo [Instituto de Fisica de Liquidos y Sistemas Biologicos (IFLYSIB), CONICET - Universidad Nacional de La Plata (Argentina); McCarthy, Andres N., E-mail: amccarthy@iflysib.unlp.edu.a [Instituto de Fisica de Liquidos y Sistemas Biologicos (IFLYSIB), CONICET - Universidad Nacional de La Plata (Argentina); Grigera, J. Raul [Instituto de Fisica de Liquidos y Sistemas Biologicos (IFLYSIB), CONICET - Universidad Nacional de La Plata (Argentina)

    2011-01-17

    It is widely accepted that liquid water structure is comprised of two closely interweaved components; i.e. tetrahedral (low density) and hexagonal (high density) structures. The relative amount of these components is temperature and pressure dependent. We propose an order parameter, based on the radial distribution function, that quantifies the relative structural composition at any defined temperature and pressure, thus establishing the crossover point in structural dominance. At 300 K this point lies close to 2 kbar, pressure at which water looses most of its 'anomalous' properties.

  18. Band structures of graphene hexagonal lattice semiconductor quantum dots

    Science.gov (United States)

    Peng, Juan; Li, Shu-Shen

    2010-12-01

    Electronic structures of coupled semiconductor quantum dots (QDs) arranged as graphene hexagonal lattice are studied theoretically using the tight-binding method. In our calculations, the electrons can hop to the third-nearest-neighbors, and the overlap matrix as well as the multicenter integral are taken into account. The novel two-dimensional Dirac-like electronic excitations in graphene are found in these artificial planar QD structures. The results provide the theoretical basis for searching Dirac fermions in QD materials and have great significance for investigating and making semiconductor QD devices.

  19. The hexagon gauge anomaly in type 1 superstring theory

    International Nuclear Information System (INIS)

    Green, M.B.; Schwarz, J.H.

    1985-01-01

    Hexagon diagrams with external on-mass-shell Yang-Mills gauge particles are investigated in type I superstring theory. Both the annulus and the Moebuis-strip diagrams are shown to give anomalies, implying that spurious longitudinal modes cannot be consistently decoupled. However, the anomalies cancel when the two diagrams are added together if the gauge group is chosen to be SO(32). In carrying out the analysis, two different regulators are considered, but the same conclusions emerge in both cases. We point out where various terms in the low-energy effective action originate in superstring diagrams. (orig.)

  20. Paramagnetic resonance study of nickel ions in hexagonal barium titanate

    Science.gov (United States)

    Böttcher, R.; Langhammer, H. T.; Müller, T.

    2011-03-01

    X-ray diffraction patterns and electron paramagnetic resonance (EPR) powder spectra (9 and 34 GHz) of BaTiO3 + 0.04 BaO + xNiO (0.001 Ni ions and their valence states as well as the development of the hexagonal phase (6H modification) of Ni-doped material with respect to doping level x and sintering temperature Ts. The 6H modification begins to occur at a nominal Ni concentration of between x = 0.005 and 0.01 and its percentage increases with increasing sintering temperature. Ni-doped BaTiO3 with x = 0.02 sintered at Ts = 1400 °C is completely hexagonal. In the 3C modification, present in as-sintered ceramics with low nominal Ni concentrations, only one type of Ni EPR spectrum was observed. By comparing its principal values of the g tensor with data of single-crystal measurements the clear assignment of this spectrum to Ni + ions is possible. Two different EPR spectra with orthorhombic g tensors are observed in the as-sintered samples with hexagonal crystal structure. These spectra were assigned to Ni3 + ions with the electron spin S = 1/2 (electron configuration 3d7, strong crystal field) substituted at Ti lattice sites corresponding to the different distorted octahedra of the hexagonal modification. Measurements of the concentration reveal that only 5% of the doping material is in the state Ni3 + . No EPR spectra of Ni2 + ions have been detected in either 3C or 6H modification in as-sintered ceramics. Therefore, we suppose that the main part of nickel is substituted as Ni4 + ions on Ti4 + lattice sites. After heat treatment of the samples in H2/Ar atmosphere a single-line spectrum with g = 2.21 ± 0.01 at room temperature has been observed which is assigned to metallic Ni or antiferromagnetically coupled Ni2 + ions in secondary phases segregated at grain boundaries or triple points.