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Sample records for anisotropic hexagonal boron

  1. Anisotropic Hexagonal Boron Nitride Nanomaterials - Synthesis and Applications

    Energy Technology Data Exchange (ETDEWEB)

    Han,W.Q.

    2008-08-01

    Boron nitride (BN) is a synthetic binary compound located between III and V group elements in the Periodic Table. However, its properties, in terms of polymorphism and mechanical characteristics, are rather close to those of carbon compared with other III-V compounds, such as gallium nitride. BN crystallizes into a layered or a tetrahedrally linked structure, like those of graphite and diamond, respectively, depending on the conditions of its preparation, especially the pressure applied. Such correspondence between BN and carbon readily can be understood from their isoelectronic structures [1, 2]. On the other hand, in contrast to graphite, layered BN is transparent and is an insulator. This material has attracted great interest because, similar to carbon, it exists in various polymorphic forms exhibiting very different properties; however, these forms do not correspond strictly to those of carbon. Crystallographically, BN is classified into four polymorphic forms: Hexagonal BN (h-BN) (Figure 1(b)); rhombohedral BN (r-BN); cubic BN (c-BN); and wurtzite BN (w-BN). BN does not occur in nature. In 1842, Balmain [3] obtained BN as a reaction product between molten boric oxide and potassium cyanide under atmospheric pressure. Thereafter, many methods for its synthesis were reported. h-BN and r-BN are formed under ambient pressure. c-BN is synthesized from h-BN under high pressure at high temperature while w-BN is prepared from h-BN under high pressure at room temperature [1]. Each BN layer consists of stacks of hexagonal plate-like units of boron and nitrogen atoms linked by SP{sup 2} hybridized orbits and held together mainly by Van der Waals force (Fig 1(b)). The hexagonal polymorph has two-layered repeating units: AA'AA'... that differ from those in graphite: ABAB... (Figure 1(a)). Within the layers of h-BN there is coincidence between the same phases of the hexagons, although the boron atoms and nitrogen atoms are alternatively located along the c

  2. Fabrication of particular structures of hexagonal boron nitride and boron-carbon-nitrogen layers by anisotropic etching

    Science.gov (United States)

    Vishwakarma, Riteshkumar; Sharma, Subash; Shinde, Sachin M.; Sharma, Kamal P.; Thangaraja, Amutha; Kalita, Golap; Tanemura, Masaki

    2016-05-01

    Anisotropic etching of hexagonal boron nitride (h-BN) and boron-carbon-nitrogen (BCN) basal plane can be an exciting platform to develop well-defined structures with interesting properties. Here, we developed an etching process of atomically thin h-BN and BCN layers to fabricate nanoribbons (NRs) and other distinct structures by annealing in H2 and Ar gas mixture. BCN and h-BN films are grown on Cu foil by chemical vapor deposition (CVD) using solid camphor and ammonia borane as carbon, nitrogen and boron source, respectively. Formation of micron size well-defined etched holes and NRs are obtained in both h-BN and BCN layers by the post growth annealing process. The etching process of h-BN and BCN basal plane to fabricate NRs and other structures with pronounced edges can open up new possibilities in 2D hybrid materials.

  3. Patterning monolayer graphene with zigzag edges on hexagonal boron nitride by anisotropic etching

    Science.gov (United States)

    Wang, Guole; Wu, Shuang; Zhang, Tingting; Chen, Peng; Lu, Xiaobo; Wang, Shuopei; Wang, Duoming; Watanabe, Kenji; Taniguchi, Takashi; Shi, Dongxia; Yang, Rong; Zhang, Guangyu

    2016-08-01

    Graphene nanostructures are potential building blocks for nanoelectronic and spintronic devices. However, the production of monolayer graphene nanostructures with well-defined zigzag edges remains a challenge. In this paper, we report the patterning of monolayer graphene nanostructures with zigzag edges on hexagonal boron nitride (h-BN) substrates by an anisotropic etching technique. We found that hydrogen plasma etching of monolayer graphene on h-BN is highly anisotropic due to the inert and ultra-flat nature of the h-BN surface, resulting in zigzag edge formation. The as-fabricated zigzag-edged monolayer graphene nanoribbons (Z-GNRs) with widths below 30 nm show high carrier mobility and width-dependent energy gaps at liquid helium temperature. These high quality Z-GNRs are thus ideal structures for exploring their valleytronic or spintronic properties.

  4. Inter-layer potential for hexagonal boron nitride

    Science.gov (United States)

    Leven, Itai; Azuri, Ido; Kronik, Leeor; Hod, Oded

    2014-03-01

    A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

  5. Method for exfoliation of hexagonal boron nitride

    Science.gov (United States)

    Lin, Yi (Inventor); Connell, John W. (Inventor)

    2012-01-01

    A new method is disclosed for the exfoliation of hexagonal boron nitride into mono- and few-layered nanosheets (or nanoplatelets, nanomesh, nanoribbons). The method does not necessarily require high temperature or vacuum, but uses commercially available h-BN powders (or those derived from these materials, bulk crystals) and only requires wet chemical processing. The method is facile, cost efficient, and scalable. The resultant exfoliated h-BN is dispersible in an organic solvent or water thus amenable for solution processing for unique microelectronic or composite applications.

  6. Phonon-Photon Mapping in a Color Center in Hexagonal Boron Nitride.

    Science.gov (United States)

    Vuong, T Q P; Cassabois, G; Valvin, P; Ouerghi, A; Chassagneux, Y; Voisin, C; Gil, B

    2016-08-26

    We report on the ultraviolet optical response of a color center in hexagonal boron nitride. We demonstrate a mapping between the vibronic spectrum of the color center and the phonon dispersion in hexagonal boron nitride, with a striking suppression of the phonon assisted emission signal at the energy of the phonon gap. By means of nonperturbative calculations of the electron-phonon interaction in a strongly anisotropic phonon dispersion, we reach a quantitative interpretation of the acoustic phonon sidebands from cryogenic temperatures up to room temperature. Our analysis provides an original method for estimating the spatial extension of the electronic wave function in a point defect. PMID:27610882

  7. Quantum emission from hexagonal boron nitride monolayers.

    Science.gov (United States)

    Tran, Toan Trong; Bray, Kerem; Ford, Michael J; Toth, Milos; Aharonovich, Igor

    2016-01-01

    Artificial atomic systems in solids are widely considered the leading physical system for a variety of quantum technologies, including quantum communications, computing and metrology. To date, however, room-temperature quantum emitters have only been observed in wide-bandgap semiconductors such as diamond and silicon carbide, nanocrystal quantum dots, and most recently in carbon nanotubes. Single-photon emission from two-dimensional materials has been reported, but only at cryogenic temperatures. Here, we demonstrate room-temperature, polarized and ultrabright single-photon emission from a colour centre in two-dimensional hexagonal boron nitride. Density functional theory calculations indicate that vacancy-related defects are a probable source of the emission. Our results demonstrate the unprecedented potential of van der Waals crystals for large-scale nanophotonics and quantum information processing. PMID:26501751

  8. Hexagonal boron nitride and water interaction parameters

    Science.gov (United States)

    Wu, Yanbin; Wagner, Lucas K.; Aluru, Narayana R.

    2016-04-01

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems.

  9. Mechanical Hysteresis of Hexagonal Boron Nitride

    Institute of Scientific and Technical Information of China (English)

    ZHOU Aiguo; LI Haoran

    2011-01-01

    Hexagonal boron nitride (h-BN) is an important structural material with layered microstructure.Because of the plastic anisotropy,this material shows obvious mechanical hysteresis (nonlinear elastic deformation).There are hysteretic loops at the cyclical load-unload stress-strain curves of h-BN.Consequently,two hot-pressed h-BN cylinders with different textures were studied.The mechanical hysteresis is heavily texture-dependent.The area of hysteretic loop is linearly related with the square of loading stresslevel.Two minor loops attached on the hysteretic loops with the same extreme stresses have congruent shapes.It can be concluded that the mechanical hysteresis of h-BN can he explained by a Kink Nonlinear Elastic model developed from the study of a ternary carbide Ti3SiC2.

  10. Hexagonal boron nitride and water interaction parameters.

    Science.gov (United States)

    Wu, Yanbin; Wagner, Lucas K; Aluru, Narayana R

    2016-04-28

    The study of hexagonal boron nitride (hBN) in microfluidic and nanofluidic applications at the atomic level requires accurate force field parameters to describe the water-hBN interaction. In this work, we begin with benchmark quality first principles quantum Monte Carlo calculations on the interaction energy between water and hBN, which are used to validate random phase approximation (RPA) calculations. We then proceed with RPA to derive force field parameters, which are used to simulate water contact angle on bulk hBN, attaining a value within the experimental uncertainties. This paper demonstrates that end-to-end multiscale modeling, starting at detailed many-body quantum mechanics and ending with macroscopic properties, with the approximations controlled along the way, is feasible for these systems. PMID:27131542

  11. Vertical transport in graphene-hexagonal boron nitride heterostructure devices

    OpenAIRE

    Samantha Bruzzone; Demetrio Logoteta; Gianluca Fiori; Giuseppe Iannaccone

    2015-01-01

    Research in graphene-based electronics is recently focusing on devices based on vertical heterostructures of two-dimensional materials. Here we use density functional theory and multiscale simulations to investigate the tunneling properties of single- and double-barrier structures with graphene and few-layer hexagonal boron nitride (h-BN) or hexagonal boron carbon nitride (h-BC2N). We find that tunneling through a single barrier exhibit a weak dependence on energy. We also show that in double...

  12. Hexagonal boron-nitride nanomesh magnets

    Science.gov (United States)

    Ohata, C.; Tagami, R.; Nakanishi, Y.; Iwaki, R.; Nomura, K.; Haruyama, J.

    2016-09-01

    The formation of magnetic and spintronic devices using two-dimensional (2D) atom-thin layers has attracted attention. Ferromagnetisms (FMs) arising from zigzag-type atomic structure of edges of 2D atom-thin materials have been experimentally observed in graphene nanoribbons, hydrogen (H)-terminated graphene nanomeshes (NMs), and few-layer oxygen (O)-terminated black phosphorus NMs. Herein, we report room-temperature edge FM in few-layer hexagonal boron-nitride (hBN) NMs. O-terminated hBNNMs annealed at 500 °C show the largest FM, while it completely disappears in H-terminated hBNNMs. When hBNNMs are annealed at other temperatures, amplitude of the FM significantly decreases. These are highly in contrast to the case of graphene NMs but similar to the cases of black phosphorus NM and suggest that the hybridization of the O atoms with B(N) dangling bonds of zigzag pore edges, formed at the 500 °C annealing, strongly contribute to this edge FM. Room-temperature FM realizable only by exposing hBNNMs into air opens the way for high-efficiency 2D flexible magnetic and spintronic devices without the use of rare magnetic elements.

  13. Communication: Water on hexagonal boron nitride from diffusion Monte Carlo

    Energy Technology Data Exchange (ETDEWEB)

    Al-Hamdani, Yasmine S.; Ma, Ming; Michaelides, Angelos, E-mail: angelos.michaelides@ucl.ac.uk [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Alfè, Dario [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Earth Sciences, University College London, Gower Street, London WC1E 6BT (United Kingdom); Lilienfeld, O. Anatole von [Institute of Physical Chemistry and National Center for Computational Design and Discovery of Novel Materials, Department of Chemistry, University of Basel, Klingelbergstrasse 80, CH-4056 Basel (Switzerland); Argonne Leadership Computing Facility, Argonne National Laboratories, 9700 S. Cass Avenue Argonne, Lemont, Illinois 60439 (United States)

    2015-05-14

    Despite a recent flurry of experimental and simulation studies, an accurate estimate of the interaction strength of water molecules with hexagonal boron nitride is lacking. Here, we report quantum Monte Carlo results for the adsorption of a water monomer on a periodic hexagonal boron nitride sheet, which yield a water monomer interaction energy of −84 ± 5 meV. We use the results to evaluate the performance of several widely used density functional theory (DFT) exchange correlation functionals and find that they all deviate substantially. Differences in interaction energies between different adsorption sites are however better reproduced by DFT.

  14. Substrate-induced bandgap in graphene on hexagonal boron nitride

    OpenAIRE

    Giovannetti, Gianluca; Khomyakov, Petr A.; Brocks, Geert; Paul J. Kelly; Brink, Jeroen van den

    2007-01-01

    We determine the electronic structure of a graphene sheet on top of a lattice-matched hexagonal boron nitride (h-BN) substrate using ab initio density functional calculations. The most stable configuration has one carbon atom on top of a boron atom, the other centered above a BN ring. The resulting inequivalence of the two carbon sites leads to the opening of a gap of 53 meV at the Dirac points of graphene and to finite masses for the Dirac fermions. Alternative orientations of the graphene s...

  15. A new interlayer potential for hexagonal boron nitride

    Science.gov (United States)

    Akıner, Tolga; Mason, Jeremy K.; Ertürk, Hakan

    2016-09-01

    A new interlayer potential is developed for interlayer interactions of hexagonal boron nitride sheets, and its performance is compared with other potentials in the literature using molecular dynamics simulations. The proposed potential contains Coulombic and Lennard-Jones 6–12 terms, and is calibrated with recent experimental data including the hexagonal boron nitride interlayer distance and elastic constants. The potentials are evaluated by comparing the experimental and simulated values of interlayer distance, density, elastic constants, and thermal conductivity using non-equilibrium molecular dynamics. The proposed potential is found to be in reasonable agreement with experiments, and improves on earlier potentials in several respects. Simulated thermal conductivity values as a function of the number of layers and of temperature suggest that the proposed LJ 6–12 potential has the ability to predict some phonon behaviour during heat transport in the out-of-plane direction.

  16. Investigations on the characterization of ion implanted hexagonal boron nitride

    Science.gov (United States)

    Aradi, E.; Naidoo, S. R.; Erasmus, R. M.; Julies, B.; Derry, T. E.

    2013-07-01

    The effect of ion implantation on hexagonal boron nitride (h-BN) is studied herein. We use boron as an ion of choice to introduce radiation damage into h-BN, at fluences ranging from 1 × 1014-1 × 1016 ions/cm2 and implantation energy ranges from 40 to 160 keV. The thermal dependence is also investigated by varying the annealing temperature from room temperature to 400 °C after implantation. Raman spectroscopy showed Raman active defects one of which is possibly related to the formation of cubic boron nitride nanocrystals (nc-BN) within the implanted range. The relationship of these defect induced Raman active peaks was investigated by varying the implantation parameters. The preliminary Transmission Electron Microscopy (TEM) results also are reported briefly.

  17. The structure and local chemical properties of boron-terminated tetravacancies in hexagonal boron-nitride

    OpenAIRE

    Cretu, Ovidiu; Lin, Yung-Chang; Koshino, Masanori; Tizei, Luiz H. G.; Liu, Zheng; Suenaga, Kazutomo

    2014-01-01

    Imaging and spectroscopy performed in a low-voltage scanning transmission electron microscope (LV-STEM) are used to characterize the structure and chemical properties of boron-terminated tetravacancies in hexagonal boron nitride (h-BN). We confirm earlier theoretical predictions about the structure of these defects and identify new features in the electron energy-loss spectra (EELS) of B atoms using high resolution chemical maps, highlighting differences between these areas and pristine sampl...

  18. Carbon nanotube quantum dots on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Baumgartner, A., E-mail: andreas.baumgartner@unibas.ch; Abulizi, G.; Gramich, J.; Schönenberger, C. [Institute of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel (Switzerland); Watanabe, K.; Taniguchi, T. [National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-07-14

    We report the fabrication details and low-temperature characteristics of carbon nanotube (CNT) quantum dots on flakes of hexagonal boron nitride (hBN) as substrate. We demonstrate that CNTs can be grown on hBN by standard chemical vapor deposition and that standard scanning electron microscopy imaging and lithography can be employed to fabricate nanoelectronic structures when using optimized parameters. This proof of concept paves the way to more complex devices on hBN, with more predictable and reproducible characteristics and electronic stability.

  19. Exciton optical transitions in a hexagonal boron nitride single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Museur, L. [Laboratoire de Physique des Lasers - LPL, CNRS UMR 7538, Institut Galilee, Universite Paris 13, 93430 Villetaneuse (France); Brasse, G.; Maine, S.; Ducastelle, F.; Loiseau, A. [ONERA - Laboratoire d' Etude des Microstructures - LEM, ONERA-CNRS, UMR 104, BP 72, 92322 Chatillon Cedex (France); Pierret, A. [ONERA - Laboratoire d' Etude des Microstructures - LEM, ONERA-CNRS, UMR 104, BP 72, 92322 Chatillon Cedex (France); CEA-CNRS, Institut Neel/CNRS, Universite J. Fourier, CEA/INAC/SP2M, 17 rue des Martyrs, 38 054 Grenoble Cedex 9 (France); Attal-Tretout, B. [ONERA - Departement Mesures Physiques - DMPh, 27 Chemin de la Huniere, 91761 Palaiseau Cedex (France); Barjon, J. [GEMaC, Universite de Versailles St Quentin, CNRS Bellevue, 1 Place Aristide Briand, 92195 Meudon Cedex (France); Watanabe, K.; Taniguchi, T. [National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044 (Japan); Kanaev, A. [Laboratoire des Sciences des Procedes et des Materiaux - LSPM, CNRS UPR 3407, Universite Paris 13, 93430 Villetaneuse (France)

    2011-06-15

    Near band gap photoluminescence (PL) of a hexagonal boron nitride single crystal has been studied at cryogenic temperatures with synchrotron radiation excitation. The PL signal is dominated by trapped-exciton optical transitions, while the photoluminescence excitation (PLE) spectra show features assigned to free excitons. Complementary photoconductivity and PLE measurements set the band gap transition energy to 6.4 eV and the Frenkel exciton binding energy larger than 380 meV. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Field emission characteristics from graphene on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, Takatoshi, E-mail: takatoshi-yamada@aist.go.jp [National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan); Masuzawa, Tomoaki; Ebisudani, Taishi; Okano, Ken [International Christian University, 3-10-2 Osawa, Mitaka, Tokyo 181-8585 (Japan); Taniguchi, Takashi [National Institute for Material Science (NIMS), 1-1-1 Namiki, Tsukuba 305-0044 (Japan)

    2014-06-02

    An attempt has been made to utilize uniquely high electron mobility of graphene on hexagonal boron nitride (h-BN) to electron emitter. The field emission property of graphene/h-BN/Si structure has shown enhanced threshold voltage and emission current, both of which are key to develop novel vacuum nanoelectronics devices. The field emission property was discussed along with the electronic structure of graphene investigated by Fowler-Nordheim plot and ultraviolet photoelectron spectroscopy. The result suggested that transferring graphene on h-BN modified its work function, which changed field emission mechanism. Our report opens up a possibility of graphene-based vacuum nanoelectronics devices with tuned work function.

  1. Superior thermal conductivity in suspended bilayer hexagonal boron nitride

    Science.gov (United States)

    Wang, Chengru; Guo, Jie; Dong, Lan; Aiyiti, Adili; Xu, Xiangfan; Li, Baowen

    2016-05-01

    We reported the basal-plane thermal conductivity in exfoliated bilayer hexagonal boron nitride h-BN that was measured using suspended prepatterned microstructures. The h-BN sample suitable for thermal measurements was fabricated by dry-transfer method, whose sample quality, due to less polymer residues on surfaces, is believed to be superior to that of PMMA-mediated samples. The measured room temperature thermal conductivity is around 484 Wm‑1K‑1(+141 Wm‑1K‑1/ ‑24 Wm‑1K‑1) which exceeds that in bulk h-BN, providing experimental observation of the thickness-dependent thermal conductivity in suspended few-layer h-BN.

  2. Electronic structure of superlattices of graphene and hexagonal boron nitride

    KAUST Repository

    Kaloni, Thaneshwor P.

    2011-11-14

    We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

  3. Molecular dynamics of halogenated graphene - hexagonal boron nitride nanoribbons

    Science.gov (United States)

    Nemnes, G. A.; Visan, Camelia; Anghel, D. V.; Manolescu, A.

    2016-08-01

    The hybrid graphene - hexagonal boron nitride (G-hBN) systems offer new routes in the design of nanoscale electronic devices. Using ab initio density functional theory calculations we investigate the dynamics of zig-zag nanoribbons a few interatomic distances wide. Several structures are analyzed, namely pristine graphene, hBN and G-hBN systems. By passivating the nanoribbon edges with hydrogen and different halogen atoms, one may tune the electronic and mechanical properties, like the band gap energies and the natural frequencies of vibration.

  4. Vertical transport in graphene-hexagonal boron nitride heterostructure devices

    Science.gov (United States)

    Bruzzone, Samantha; Logoteta, Demetrio; Fiori, Gianluca; Iannaccone, Giuseppe

    2015-09-01

    Research in graphene-based electronics is recently focusing on devices based on vertical heterostructures of two-dimensional materials. Here we use density functional theory and multiscale simulations to investigate the tunneling properties of single- and double-barrier structures with graphene and few-layer hexagonal boron nitride (h-BN) or hexagonal boron carbon nitride (h-BC2N). We find that tunneling through a single barrier exhibit a weak dependence on energy. We also show that in double barriers separated by a graphene layer we do not observe resonant tunneling, but a significant increase of the tunneling probability with respect to a single barrier of thickness equal to the sum of the two barriers. This is due to the fact that the graphene layer acts as an effective phase randomizer, suppressing resonant tunneling and effectively letting a double-barrier structure behave as two single-barriers in series. Finally, we use multiscale simulations to reproduce a current-voltage characteristics resembling that of a resonant tunneling diode, that has been experimentally observed in single barrier structure. The peak current is obtained when there is perfect matching between the densities of states of the cathode and anode graphene regions.

  5. Band gap effects of hexagonal boron nitride using oxygen plasma

    Energy Technology Data Exchange (ETDEWEB)

    Sevak Singh, Ram; Leong Chow, Wai [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Yingjie Tay, Roland [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Hon Tsang, Siu [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Mallick, Govind [Temasek Laboratories-NTU, 50 Nanyang Avenue, Singapore 639798 (Singapore); Weapons and Materials Research Directorate, U.S. Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005 (United States); Tong Teo, Edwin Hang, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2014-04-21

    Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.

  6. Structure and local chemical properties of boron-terminated tetravacancies in hexagonal boron nitride.

    Science.gov (United States)

    Cretu, Ovidiu; Lin, Yung-Chang; Koshino, Masanori; Tizei, Luiz H G; Liu, Zheng; Suenaga, Kazutomo

    2015-02-20

    Imaging and spectroscopy performed in a low-voltage scanning transmission electron microscope are used to characterize the structure and chemical properties of boron-terminated tetravacancies in hexagonal boron nitride. We confirm earlier theoretical predictions about the structure of these defects and identify new features in the electron energy-loss spectra of B atoms using high resolution chemical maps, highlighting differences between these areas and pristine sample regions. We correlate our experimental data with calculations which help explain our observations. PMID:25763963

  7. Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride

    Science.gov (United States)

    Liu, Zheng; Gong, Yongji; Zhou, Wu; Ma, Lulu; Yu, Jingjiang; Idrobo, Juan Carlos; Jung, Jeil; MacDonald, Allan H.; Vajtai, Robert; Lou, Jun; Ajayan, Pulickel M.

    2013-10-01

    Hexagonal boron nitride is a two-dimensional layered material that can be stable at 1,500 °C in air and will not react with most chemicals. Here we demonstrate large-scale, ultrathin, oxidation-resistant coatings of high-quality hexagonal boron nitride layers with controlled thicknesses from double layers to bulk. We show that such ultrathin hexagonal boron nitride films are impervious to oxygen diffusion even at high temperatures and can serve as high-performance oxidation-resistant coatings for nickel up to 1,100 °C in oxidizing atmospheres. Furthermore, graphene layers coated with a few hexagonal boron nitride layers are also protected at similarly high temperatures. These hexagonal boron nitride atomic layer coatings, which can be synthesized via scalable chemical vapour deposition method down to only two layers, could be the thinnest coating ever shown to withstand such extreme environments and find applications as chemically stable high-temperature coatings.

  8. Hexagonal-boron nitride substrates for electroburnt graphene nanojunctions

    Science.gov (United States)

    Sadeghi, Hatef; Sangtarash, Sara; Lambert, Colin

    2016-08-01

    We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through graphene nanojunctions just before gap formation. Junctions in vacuum and on hBN are formed using classical molecular dynamics to create initial structures, followed by relaxation using density functional theory. We find that the hBN only slightly reduces the current through the junctions at low biases. Furthermore due to quantum interference at the last moments of breaking, the current though a single carbon filament spanning the gap is found to be higher than the current through two filaments spanning the gap in parallel. This feature is present both in the presence of absence of hBN.

  9. Functionalized hexagonal boron nitride nanomaterials: emerging properties and applications.

    Science.gov (United States)

    Weng, Qunhong; Wang, Xuebin; Wang, Xi; Bando, Yoshio; Golberg, Dmitri

    2016-07-11

    Functionalization is an important way to breed new properties and applications for a material. This review presents an overview of the progresses in functionalized hexagonal boron nitride (h-BN) nanomaterials. It begins with an introduction of h-BN structural features, physical and chemical properties, followed by an emphasis on the developments of BN functionalization strategies and its emerging properties/applications, and ends with the research perspectives. Different functionalization methods, including physical and chemical routes, are comprehensively described toward fabrication of various BN derivatives, hetero- and porous structures, etc. Novel properties of functionalized BN materials, such as high water solubility, excellent biocompatibility, tunable surface affinities, good processibility, adjustable band gaps, etc., have guaranteed wide applications in biomedical, electronic, composite, environmental and "green" energy-related fields. PMID:27173728

  10. Fabrication of hexagonal boron nitride based ceramics by combustion synthesis

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    Pure h-BN (hexagonal boron nitride) and h-BN based ceramic parts were fabricated by combustion synthesis technique, i.e. self-propagating high-temperature synthesis (SHS). Components were manufactured by the combustion reaction of 80  MPa nitrogen and the compact made by cool isostatic pressing. In h-BN based ceramic parts, h-BN powder was used as diluent and SiO2 powder as reinforcing phase. The density of pure h-BN and h-BN-based ceramic parts were 58% and 78% of theoretical density, respectively. With XRD and SEM, phases and microstructures of ceramic parts were analyzed. Mechanical properties were also tested.

  11. Nanocrystalline-graphene-tailored hexagonal boron nitride thin films.

    Science.gov (United States)

    Lee, Kang Hyuck; Shin, Hyeon-Jin; Kumar, Brijesh; Kim, Han Sol; Lee, Jinyeong; Bhatia, Ravi; Kim, Sang-Hyeob; Lee, In-Yeal; Lee, Hyo Sug; Kim, Gil-Ho; Yoo, Ji-Beom; Choi, Jae-Young; Kim, Sang-Woo

    2014-10-20

    Unintentionally formed nanocrystalline graphene (nc-G) can act as a useful seed for the large-area synthesis of a hexagonal boron nitride (h-BN) thin film with an atomically flat surface that is comparable to that of exfoliated single-crystal h-BN. A wafer-scale dielectric h-BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc-G, which prevented structural deformations in a chemical vapor deposition process. The growth mechanism of this nc-G-tailored h-BN thin film was systematically analyzed. This approach provides a novel method for preparing high-quality two-dimensional materials on a large surface. PMID:25204810

  12. Etched graphene quantum dots on hexagonal boron nitride

    Science.gov (United States)

    Engels, S.; Epping, A.; Volk, C.; Korte, S.; Voigtländer, B.; Watanabe, K.; Taniguchi, T.; Trellenkamp, S.; Stampfer, C.

    2013-08-01

    We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9 T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN.

  13. High thermal conductivity of hexagonal boron nitride laminates

    Science.gov (United States)

    Zheng, Jin-Cheng; Zhang, Liang; Kretinin, A. V.; Morozov, S. V.; Wang, Yi Bo; Wang, Tun; Li, Xiaojun; Ren, Fei; Zhang, Jingyu; Lu, Ching-Yu; Chen, Jia-Cing; Lu, Miao; Wang, Hui-Qiong; Geim, A. K.; Novoselov, K. S.

    2016-03-01

    Two-dimensional materials are characterised by a number of unique physical properties which can potentially make them useful to a wide diversity of applications. In particular, the large thermal conductivity of graphene and hexagonal boron nitride (hBN) has already been acknowledged and these materials have been suggested as novel core materials for thermal management in electronics. However, it was not clear if mass produced flakes of hBN would allow one to achieve an industrially-relevant value of thermal conductivity. Here we demonstrate that laminates of hBN exhibit thermal conductivity of up to 20 W/m·K, which is significantly larger than that currently used in thermal management. We also show that the thermal conductivity of laminates increases with the increasing volumetric mass density, which creates a way of fine tuning its thermal properties.

  14. Modelling heat conduction in polycrystalline hexagonal boron-nitride films

    Science.gov (United States)

    Mortazavi, Bohayra; Pereira, Luiz Felipe C.; Jiang, Jin-Wu; Rabczuk, Timon

    2015-08-01

    We conducted extensive molecular dynamics simulations to investigate the thermal conductivity of polycrystalline hexagonal boron-nitride (h-BN) films. To this aim, we constructed large atomistic models of polycrystalline h-BN sheets with random and uniform grain configuration. By performing equilibrium molecular dynamics (EMD) simulations, we investigated the influence of the average grain size on the thermal conductivity of polycrystalline h-BN films at various temperatures. Using the EMD results, we constructed finite element models of polycrystalline h-BN sheets to probe the thermal conductivity of samples with larger grain sizes. Our multiscale investigations not only provide a general viewpoint regarding the heat conduction in h-BN films but also propose that polycrystalline h-BN sheets present high thermal conductivity comparable to monocrystalline sheets.

  15. Periodic buckling patterns of graphene/hexagonal boron nitride heterostructure

    International Nuclear Information System (INIS)

    Graphene/hexagonal boron nitride (h-BN) heterostructure has showed great potential to improve the performance of a graphene device. A graphene on an h-BN substrate may buckle due to the thermal expansion mismatch between the graphene and h-BN. We used an energy method to investigate the periodic buckling patterns including one-dimensional, square checkerboard, hexagonal, equilateral triangular and herringbone mode in a graphene/h-BN heterostructure under equi-biaxial compression. The total energy, consisting of cohesive energy, graphene membrane energy and graphene bending energy, for each buckling pattern is obtained analytically. At a compression slightly larger than the critical strain, all buckling patterns have the same total energies, which suggests that any buckling pattern may occur. At a compression much larger than the critical strain, the herringbone mode has the lowest total energy by significantly reducing the membrane energy of graphene at the expense of a slight increase of the bending energy of graphene and cohesive energy. These results may serve as guidelines for strain engineering in graphene/h-BN heterostructures. (paper)

  16. Transport properties of ultrathin black phosphorus on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Doganov, Rostislav A.; Özyilmaz, Barbaros [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore, 28 Medical Drive, 117456 Singapore (Singapore); Koenig, Steven P.; Yeo, Yuting [Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore); Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2015-02-23

    Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.

  17. Transport properties of ultrathin black phosphorus on hexagonal boron nitride

    International Nuclear Information System (INIS)

    Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO2 substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO2 substrates and reduces the hysteresis at room temperature

  18. Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire.

    Science.gov (United States)

    Jang, A-Rang; Hong, Seokmo; Hyun, Chohee; Yoon, Seong In; Kim, Gwangwoo; Jeong, Hu Young; Shin, Tae Joo; Park, Sung O; Wong, Kester; Kwak, Sang Kyu; Park, Noejung; Yu, Kwangnam; Choi, Eunjip; Mishchenko, Artem; Withers, Freddie; Novoselov, Kostya S; Lim, Hyunseob; Shin, Hyeon Suk

    2016-05-11

    Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials. PMID:27120101

  19. Reduced stability of copper interconnects due to wrinkles and steps on hexagonal boron nitride substrates

    Science.gov (United States)

    Gao, Jian; Chow, Philippe K.; Thomas, Abhay V.; Lu, Toh-Ming; Borca-Tasciuc, Theodorian; Koratkar, Nikhil

    2014-09-01

    There is great scientific and technological interest in the use of chemical-vapor-deposition grown hexagonal boron nitride dielectric substrates for microelectronics applications. This interest stems from its superior heat spreading capability compared to silicon dioxide as well as the lack of surface dangling bonds or charge traps in hexagonal boron nitride which results in superior performance for graphene based electronics devices. However, surface heterogeneities, such as wrinkles or steps, are ubiquitous in such devices due to the fabrication and processing of chemical vapor deposition grown hexagonal boron nitride. In this study, we characterize the effect of such surface heterogeneities on the stability of copper interconnects used in microelectronics devices. Based on the theoretical thermo-physical properties of the constituent thin film layers, our simulations predict that copper interconnects deposited on hexagonal boron nitride can withstand ˜1.9 times more power than on a silicon dioxide substrate, due to its superior in-plane thermal conductivity. However, our electrical measurements reveal that copper wires melt and fail at consistently lower current densities on hexagonal boron nitride than on silicon dioxide. This was verified by testing in air as well as under vacuum. Scanning electron microscopy and atomic force microscopy characterization of the hexagonal boron nitride surface indicates that this contradictory result is due to nanoscale surface non-uniformities (i.e., wrinkles and steps) which are omnipresent in chemical-vapor-deposition grown and transferred hexagonal boron nitride films. Our results highlight the critical need for improved processing methods before large-scale microelectronics applications of chemical vapor deposition grown hexagonal boron nitride can be realized.

  20. Electronic properties of Mn-decorated silicene on hexagonal boron nitride

    KAUST Repository

    Kaloni, Thaneshwor P.

    2013-12-17

    We study silicene on hexagonal boron nitride, using first-principles calculations. Since hexagonal boron nitride is semiconducting, the interaction with silicene is weaker than for metallic substrates. It therefore is possible to open a 50 meV band gap in the silicene. We further address the effect of Mn decoration by determining the onsite Hubbard interaction parameter, which turns out to differ significantly for decoration at the top and hollow sites. The induced magnetism in the system is analyzed in detail.

  1. Graphene on hexagonal boron nitride as a tunable hyperbolic metamaterial

    Science.gov (United States)

    Dai, S.; Ma, Q.; Liu, M. K.; Andersen, T.; Fei, Z.; Goldflam, M. D.; Wagner, M.; Watanabe, K.; Taniguchi, T.; Thiemens, M.; Keilmann, F.; Janssen, G. C. A. M.; Zhu, S.-E.; Jarillo-Herrero, P.; Fogler, M. M.; Basov, D. N.

    2015-08-01

    Hexagonal boron nitride (h-BN) is a natural hyperbolic material, in which the dielectric constants are the same in the basal plane (ɛt ≡ ɛx = ɛy) but have opposite signs (ɛtɛz phonon polaritons—collective modes that originate from the coupling between photons and electric dipoles in phonons. However, control of these hyperbolic phonon polaritons modes has remained challenging, mostly because their electrodynamic properties are dictated by the crystal lattice of h-BN. Here we show, by direct nano-infrared imaging, that these hyperbolic polaritons can be effectively modulated in a van der Waals heterostructure composed of monolayer graphene on h-BN. Tunability originates from the hybridization of surface plasmon polaritons in graphene with hyperbolic phonon polaritons in h-BN, so that the eigenmodes of the graphene/h-BN heterostructure are hyperbolic plasmon-phonon polaritons. The hyperbolic plasmon-phonon polaritons in graphene/h-BN suffer little from ohmic losses, making their propagation length 1.5-2.0 times greater than that of hyperbolic phonon polaritons in h-BN. The hyperbolic plasmon-phonon polaritons possess the combined virtues of surface plasmon polaritons in graphene and hyperbolic phonon polaritons in h-BN. Therefore, graphene/h-BN can be classified as an electromagnetic metamaterial as the resulting properties of these devices are not present in its constituent elements alone.

  2. Thermal transport across graphene and single layer hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jingchao, E-mail: zhang@unl.edu, E-mail: yyue@whu.edu.cn [Holland Computing Center, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States); Hong, Yang [Department of Chemistry, University of Nebraska-Lincoln, Lincoln, Nebraska 68588 (United States); Yue, Yanan, E-mail: zhang@unl.edu, E-mail: yyue@whu.edu.cn [School of Power and Mechanical Engineering, Wuhan University, Wuhan, Hubei 430072 (China)

    2015-04-07

    As the dimensions of nanocircuits and nanoelectronics shrink, thermal energies are being generated in more confined spaces, making it extremely important and urgent to explore for efficient heat dissipation pathways. In this work, the phonon energy transport across graphene and hexagonal boron-nitride (h-BN) interface is studied using classic molecular dynamics simulations. Effects of temperature, interatomic bond strength, heat flux direction, and functionalization on interfacial thermal transport are investigated. It is found out that by hydrogenating graphene in the hybrid structure, the interfacial thermal resistance (R) between graphene and h-BN can be reduced by 76.3%, indicating an effective approach to manipulate the interfacial thermal transport. Improved in-plane/out-of-plane phonon couplings and broadened phonon channels are observed in the hydrogenated graphene system by analyzing its phonon power spectra. The reported R results monotonically decrease with temperature and interatomic bond strengths. No thermal rectification phenomenon is observed in this interfacial thermal transport. Results reported in this work give the fundamental knowledge on graphene and h-BN thermal transport and provide rational guidelines for next generation thermal interface material designs.

  3. Exfoliation of Hexagonal Boron Nitride via Ferric Chloride Intercalation

    Science.gov (United States)

    Hung, Ching-cheh; Hurst, Janet; Santiago, Diana; Rogers, Richard B.

    2014-01-01

    Sodium fluoride (NaF) was used as an activation agent to successfully intercalate ferric chloride (FeCl3) into hexagonal boron nitride (hBN). This reaction caused the hBN mass to increase by approx.100 percent, the lattice parameter c to decrease from 6.6585 to between 6.6565 and 6.6569 ?, the x-ray diffraction (XRD) (002) peak to widen from 0.01deg to 0.05deg of the full width half maximum value, the Fourier transform infrared (FTIR) spectrum's broad band (1277/cm peak) to change shape, and new FTIR bands to emerge at 3700 to 2700 and 1600/cm. This indicates hBN's structural and chemical properties are significantly changed. The intercalated product was hygroscopic and interacted with moisture in the air to cause further structural and chemical changes (from XRD and FTIR). During a 24-h hold at room temperature in air with 100 percent relative humidity, the mass increased another 141 percent. The intercalated product, hydrated or not, can be heated to 750 C in air to cause exfoliation. Exfoliation becomes significant after two intercalation-air heating cycles, when 20-nm nanosheets are commonly found. Structural and chemical changes indicated by XRD and FTIR data were nearly reversed after the product was placed in hydrochloric acid (HCl), resulting in purified, exfoliated, thin hBN products.

  4. Charge carrier transport properties in layer structured hexagonal boron nitride

    Science.gov (United States)

    Doan, T. C.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2014-10-01

    Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K). The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0)-α with α = 3.02, satisfying the two-dimensional (2D) carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1), which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  5. Charge carrier transport properties in layer structured hexagonal boron nitride

    Directory of Open Access Journals (Sweden)

    T. C. Doan

    2014-10-01

    Full Text Available Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (˜ 6.4 eV, hexagonal boron nitride (hBN has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K. The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T0−α with α = 3.02, satisfying the two-dimensional (2D carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm-1, which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

  6. Interband transitions, plasmons, and dispersion in hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Tarrio, C.; Schnatterly, S.E. (Jesse W. Beams Laboratory of Physics, University of Virginia, Charlottesville, Virginia 22901 (US))

    1989-10-15

    We have measured inelastic-electron-scattering spectra of several hexagonal-boron-nitride samples with momentum transfer both in and out of the {ital a}-{ital b} plane and obtained the dielectric and optical constants from 0 to 60 eV. The low-{ital q} energy-loss spectrum with momentum in the plane is dominated by the {pi}-electron plasmon at 8.5 eV and the total ({sigma}+{pi}) plasmon at 26.4 eV. The {pi} plasmon arises from two strong interband transitions at 6.1 and 6.95 eV, and a continuum threshold at 7.6 eV. The plasmons are well described as collective oscillations of bound electrons. We have inferred a band gap of 5.9 eV by observing the intrinsic absorption threshold in a series of samples of varying purity. The dispersion in the plasmons and the second interband transition is quadratic for 0{lt}{ital q}{lt}1.0 A{sup {minus}1}, while the first interband transition disperses upward in energy up to 0.6 A{sup {minus}1}, above which its energy remains almost constant. The dispersion of the {pi} plasmon is equal to that of the second interband transition, and its width remains constant up to a critical momentum, indicating that its width is dominated by decay into single-particle transitions. The energy-loss function with {ital q} along {ital c} shows three collective oscillations at 7.7, 11.7, and 23 eV. The interband spectrum is similar to that with {ital q} in the plane, except that an additional transition appears at 9.9 eV and the oscillator strength is shifted to higher energies. The similarity in the spectra for {ital q} in and out of the plane indicates nearly degenerate occupied {sigma} and {pi} states near {ital E}{sub {ital F}}, which is inconsistent with existing band-structure calculations.

  7. Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

    Science.gov (United States)

    Alam, M. T.; Bresnehan, M. S.; Robinson, J. A.; Haque, M. A.

    2014-01-01

    Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m-1 K-1, is lower than the bulk basal plane value (390 W m-1 K-1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

  8. Non-linear excitation of quantum emitters in two-dimensional hexagonal boron nitride

    CERN Document Server

    Schell, Andreas W; Takashima, Hideaki; Takeuchi, Shigeki; Aharonovich, Igor

    2016-01-01

    Two-photon absorption is an important non-linear process employed for high resolution bio-imaging and non-linear optics. In this work we realize two-photon excitation of a quantum emitter embedded in a two-dimensional material. We examine defects in hexagonal boron nitride and show that the emitters exhibit similar spectral and quantum properties under one-photon and two-photon excitation. Furthermore, our findings are important to deploy two-dimensional hexagonal boron nitride for quantum non-linear photonic applications.

  9. Quasi free-standing silicene in a superlattice with hexagonal boron nitride

    KAUST Repository

    Kaloni, T. P.

    2013-11-12

    We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized in this superlattice. In particular, the Dirac cone of silicene is preserved. Due to the wide band gap of hexagonal boron nitride, the superlattice realizes the characteristic physical phenomena of free-standing silicene. In particular, we address by model calculations the combined effect of the intrinsic spin-orbit coupling and an external electric field, which induces a transition from a semimetal to a topological insulator and further to a band insulator.

  10. Is hexagonal boron nitride always good as a substrate for carbon nanotube-based devices?

    Science.gov (United States)

    Kang, Seoung-Hun; Kim, Gunn; Kwon, Young-Kyun

    2015-02-21

    Hexagonal boron nitride sheets have been noted especially for their enhanced properties as substrates for sp(2) carbon-based nanodevices. To evaluate whether such enhanced properties would be retained under various realistic conditions, we investigate the structural and electronic properties of semiconducting carbon nanotubes on perfect and defective hexagonal boron nitride sheets under an external electric field as well as with a metal impurity, using density functional theory. We verify that the use of a perfect hexagonal boron nitride sheet as a substrate indeed improves the device performances of carbon nanotubes, compared with the use of conventional substrates such as SiO2. We further show that even the hexagonal boron nitride with some defects can show better performance as a substrate. Our calculations, on the other hand, also suggest that some defective boron nitride layers with a monovacancy and a nickel impurity could bring about poor device behavior since the imperfections impair electrical conductivity due to residual scattering under an applied electric field.

  11. Theory of thermal transport in multilayer hexagonal boron nitride and nanotubes

    Science.gov (United States)

    Lindsay, L.; Broido, D. A.

    2012-01-01

    We present a theory for the lattice thermal conductivity κL of single-walled boron nitride nanotubes (BNNTs) and multilayer hexagonal boron nitride (MLBN), which is based on an exact numerical solution of the phonon Boltzmann equation. Coupling between layers in MLBN and nanotube curvature in BNNTs each break a phonon scattering selection rule found in single-layer hexagonal boron nitride (SLBN), which reduces κL in these systems. We show that out-of-plane flexural phonons in MLBN and out-of-tube phonons in BNNTs provide large contributions to κL, qualitatively similar to multilayer graphene (MLG) and single-walled carbon nanotubes (SWCNTs). However, we find that the κL's in BNNTs and MLBN are considerably smaller compared to similar SWCNTs and MLG structures because of stronger anharmonic phonon scattering in the former. A large and strongly temperature-dependent isotope effect is found reflecting the interplay between anharmonic and isotope scattering phonons. Finally, we also demonstrate convergence of BNNTs into SLBN for large-diameter nanotubes and MLBN to bulk hexagonal boron nitride within a few layers.

  12. Boundary scattering in quasi-ballistic graphene/hexagonal boron nitride mesoscopic wires

    Science.gov (United States)

    Iguchi, Kazuyuki; Masubuchi, Satoru; Yamaguchi, Takehiro; Ohnuki, Masahiro; Watanabe, Kenji; Taniguchi, Takashi; Machida, Tomoki

    2012-02-01

    In a quasi-ballistic transport regime where the mean free path is larger than the width of conduction channel, diffusive boundary scattering results in an anomalous positive magnetoresistance due to a megnetic commensurability effect between cyclotron motion and sample width. In this work, we fabricate a high-mobility two terminal graphene mesoscopic wire on hexagonal boron nitride with a mean free path comparable to sample width ˜ 1 μm. Magnetoresistance of the graphene mesoscopic wire shows a peak structure at a magnetic field which scales with the ratio of the cyclotron radius Rc to the wire width w. The peak field increases with back-gate voltage as a consequence that the ratio w/Rc is modified due to the change in Rc. These results indicate the quasi-ballistic transport and diffusive boundary scattering in graphene on hexagonal boron nitride.

  13. The effect of the boron source composition ratio on the adsorption performance of hexagonal boron nitride without a template

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning, E-mail: zhangning5832@163.com; Zhang, Tong; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Cui, Xingyu

    2015-08-01

    An inexpensive boric acid (H{sub 3}BO{sub 3}) and borax (Na{sub 2}B{sub 4}O{sub 7}·10H{sub 2}O) mix was used as a source of boron with different composition ratios, and urea was used as a nitrogen source, in flowing ammonia atmosphere, for the preparation of hexagonal boron nitride (h-BN) with different micro-morphologies. Under a certain synthesis process, the effects of the molar ratio of borax and boric acid (or simply the boron source composition ratio for short) on the phase composition of the sample were studied; the work also explored the effect of boron source composition ratio on the micro-morphology, adsorption desorption isotherm and specific surface area of the h-BN powder. The main purpose of this work was to determine the optimum composition ratio of preparing spherical mesoporous h-BN and ensure that the micro-mechanism underpinning the formation of spherical mesoporous h-BN was understood. The results showed that at the optimum boron source composition ratio of 1:1, globular mesoporous spheres with a diameter of approximately 600–800 nm could be obtained with the highest pore volume and specific surface area (230.2 m{sup 2}/g). - Graphical abstract: Display Omitted - Highlights: • Spherical h-BN was synthesized by controlling the boron source composition ratio. • Without extra spherical template, solid Na{sub 2}O was equal to a spherical template. • At boron source composition ratio of 1:1, h-BN had best adsorption performance.

  14. Amplitude- and phase-resolved nano-spectral imaging of phonon polaritons in hexagonal boron nitride

    OpenAIRE

    Shi, Zhiwen; Bechte, Hans A.; Berweger, Samuel; Sun, Yinghui; Zeng, Bo; Jin, Chenhao; Chang, Henry; Martin, Michael C.; Raschke, Markus B.; Wang, Feng

    2015-01-01

    Phonon polaritons are quasiparticles resulting from strong coupling of photons with optical phonons. Excitation and control of these quasiparticles in 2D materials offer the opportunity to confine and transport light at the nanoscale. Here, we image the phonon polariton (PhP) spectral response in thin hexagonal boron nitride (hBN) crystals as a representative 2D material using amplitude- and phase-resolved near-field interferometry with broadband mid-IR synchrotron radiation. The large spectr...

  15. Layer speciation and electronic structure investigation of freestanding hexagonal boron nitride nanosheets

    Science.gov (United States)

    WangEqual Contribution To This Work., Jian; Wang, Zhiqiang; Cho, Hyunjin; Kim, Myung Jong; Sham, T. K.; Sun, Xuhui

    2015-01-01

    Chemical imaging, thickness mapping, layer speciation and polarization dependence have been performed on single and multilayered (up to three layers and trilayered nanosheets overlapping to form 6 and 9 layers) hexagonal boron nitride (hBN) nanosheets by scanning transmission X-ray microscopy. Spatially-resolved XANES directly from freestanding regions of different layers has been extracted and compared with sample normal and 30° tilted configurations. Notably a double feature σ* excitonic state and a stable high energy σ* state were observed at the boron site in addition to the intense π* excitonic state. The boron projected σ* DOS, especially the first σ* exciton, is sensitive to surface modification, particularly in the single layered hBN nanosheet which shows more significant detectable contaminants and defects such as tri-coordinated boron/nitrogen oxide. The nitrogen site has shown very weak or no excitonic character. The distinct excitonic effect on boron and nitrogen was interpreted to the partly ionic state of hBN. Bulk XANES of hBN nanosheets was also measured to confirm the spectro-microscopic STXM result. Finally, the unoccupied electronic structures of hBN and graphene were compared.Chemical imaging, thickness mapping, layer speciation and polarization dependence have been performed on single and multilayered (up to three layers and trilayered nanosheets overlapping to form 6 and 9 layers) hexagonal boron nitride (hBN) nanosheets by scanning transmission X-ray microscopy. Spatially-resolved XANES directly from freestanding regions of different layers has been extracted and compared with sample normal and 30° tilted configurations. Notably a double feature σ* excitonic state and a stable high energy σ* state were observed at the boron site in addition to the intense π* excitonic state. The boron projected σ* DOS, especially the first σ* exciton, is sensitive to surface modification, particularly in the single layered hBN nanosheet which

  16. Noise in Graphene Superlattices Grown on Hexagonal Boron Nitride.

    Science.gov (United States)

    Li, Xuefei; Lu, Xiaobo; Li, Tiaoyang; Yang, Wei; Fang, Jianming; Zhang, Guangyu; Wu, Yanqing

    2015-11-24

    Existing in almost all electronic systems, the current noise spectral density, originated from the fluctuation of current, is by nature far more sensitive than the mean value of current, the most common characteristic parameter in electronic devices. Existing models on its origin of either carrier number or mobility are adopted in practically all electronic devices. For the past few decades, there has been no experimental evidence for direct association between 1/f noise and any other kinetic phenomena in solid state devices. Here, in the study of a van der Waals heterostructure of graphene on hexagonal BN superlattice, satellite Dirac points have been characterized through 1/f noise spectral density with pronounced local minima and asymmetric magnitude associated with its unique energy dispersion spectrum, which can only be revealed by scanning tunneling microscopy and low temperature magneto-transport measurement. More importantly, these features even emerge in the noise spectra of devices showing no minima in electric current, and are robust at all temperatures down to 4.3 K. In addition, graphene on h-BN exhibits a record low noise level of 1.6 × 10(-9) μm(2) Hz(-1) at 10 Hz, more than 1 order of magnitude lower than previous results for graphene on SiO2. Such an epitaxial van der Waals material system not only enables an unprecedented characterization of fundamentals in solids by 1/f noise, but its superior interface also provides a key and feasible solution for further improvement of the noise level for graphene devices. PMID:26435195

  17. Flexible band gap tuning of hexagonal boron nitride sheets interconnected by acetylenic bonds.

    Science.gov (United States)

    Zhang, Hongyu; Luo, Youhua; Feng, Xiaojuan; Zhao, Lixia; Zhang, Meng

    2015-08-21

    The energetic and electronic properties of acetylenic-bond-interconnected hexagonal boron nitride sheets (BNyne), in which the number of rows of BN hexagonal rings (denoted as BN width) between neighboring arrays of acetylenic linkages increases consecutively, have been explored using first-principles calculations. Depending on the spatial position of B/N atoms with respect to the acetylenic linkages, there are two different types of configurations. The band structure features and band gap evolutions of BNyne structures as a function of the BN width can be categorized into two families, corresponding to two distinct types of configurations. In particular, for both types of BNyne structures, the band gap variations exhibit odd-even oscillating behavior depending on the BN width, which is related to the different symmetries of acetylenic chains in the unit cell. These results suggest that the embedded linear acetylenic chains can provide more flexibility for manipulation of the atomic and electronic properties of hexagonal boron nitride. These sp-sp(2) hybrid structures might promise importantly potential applications for developing nanoscale electronic and optoelectronic devices. PMID:26194068

  18. Defect charge states in Si doped hexagonal boron-nitride monolayer.

    Science.gov (United States)

    Mapasha, R E; Molepo, M P; Andrew, R C; Chetty, N

    2016-02-10

    We perform ab initio density functional theory calculations to investigate the energetics, electronic and magnetic properties of isolated stoichiometric and non-stoichiometric substitutional Si complexes in a hexagonal boron-nitride monolayer. The Si impurity atoms substituting the boron atom sites SiB giving non-stoichiometric complexes are found to be the most energetically favourable, and are half-metallic and order ferromagnetically in the neutral charge state. We find that the magnetic moments and magnetization energies increase monotonically when Si defects form a cluster. Partial density of states and standard Mulliken population analysis indicate that the half-metallic character and magnetic moments mainly arise from the Si 3p impurity states. The stoichiometric Si complexes are energetically unfavorable and non-magnetic. When charging the energetically favourable non-stoichiometric Si complexes, we find that the formation energies strongly depend on the impurity charge states and Fermi level position. We also find that the magnetic moments and orderings are tunable by charge state modulation q  =  -2, -1, 0, +1, +2. The induced half-metallic character is lost (retained) when charging isolated (clustered) Si defect(s). This underlines the potential of a Si doped hexagonal boron-nitride monolayer for novel spin-based applications.

  19. The influence of metal Mg on micro-morphology and crystallinity of spherical hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

    2015-08-15

    Highlights: • The action mechanism of Mg to the synthesis of spherical BN was explored. • The influence of Mg content on the crystallinity of h-BN powders was studied. • Even if not added any template, the spherical h-BN could be prepared. - Abstract: This search used the boric acid and borax as a source of boron, urea as a nitrogen source, Mg as metal catalyst, and thus prepared different micro-morphology and crystallinity hexagonal boron nitride powders under a flowing ammonia atmosphere at a nitriding temperature of 750 °C. The effect of Mg content on the crystallinity and micro-morphology of hexagonal boron nitride powders was studied, and the Mg action mechanism was explored. Without the added surfactant, the graphitization index (GI) was 6.87, and the diameter of the spherical h-BN was bigger. When the added Mg were 0.1 g, 0.3 g, 0.5 g and 0.7 g, the (GI) decreased to 6.04, 5.67, 4.62 and 4.84, respectively. When the Mg content was higher (0.9 g), GI value increased rapidly, and the crystallinity became bad. When the Mg content was 0.5 g, the dispersion of h-BN powders was at its optimum and refinement apparently, and the crystallinity at its highest.

  20. Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy

    Science.gov (United States)

    Cho, Yong-Jin; Summerfield, Alex; Davies, Andrew; Cheng, Tin S.; Smith, Emily F.; Mellor, Christopher J.; Khlobystov, Andrei N.; Foxon, C. Thomas; Eaves, Laurence; Beton, Peter H.; Novikov, Sergei V.

    2016-01-01

    We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate. PMID:27681943

  1. Bandgap engineered graphene and hexagonal boron nitride for resonant tunnelling diode

    Indian Academy of Sciences (India)

    PENCHALAIAH PALLA; GOPI RAJA UPPU; ANITA S ETHIRAJ; J P RAINA

    2016-10-01

    In this article a double-barrier resonant tunnelling diode (DBRTD) has been modelled by taking advantage of single-layer hexagonal lattice of graphene and hexagonal boron nitride (h-BN). The DBRTD performance and operation are explored by means of a self-consistent solution inside the non-equilibrium Green’s function formalism on an effective mass-Hamiltonian. Both p- and n-type DBRTDs exhibit a negative differential resistance effect, which entails the resonant tunnelling through the hole and electron bound states in the graphene quantum well, respectively. The peak-to-valley ratio of approximately 8 (3) for p-type (n-type) DBRTD with quantum well of 5.1 nm (4.3 nm) at a barrier width of 1.3 nm was achieved for zero bandgap graphene at room temperature.

  2. Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Dauber, Jan; Stampfer, Christoph [JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen (Germany); Peter Grünberg Institute (PGI-8/9), Forschungszentrum Jülich, 52425 Jülich (Germany); Sagade, Abhay A.; Neumaier, Daniel [Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, 52074 Aachen (Germany); Oellers, Martin [JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen (Germany); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

    2015-05-11

    The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/√(Hz) making our graphene sensors highly interesting for industrial applications.

  3. Transport properties through hexagonal boron nitride clusters embedded in graphene nanoribbons

    Science.gov (United States)

    Silva, F. W. N.; Cruz-Silva, E.; Terrones, M.; Terrones, H.; Barros, E. B.

    2016-05-01

    First-principles calculations are employed in the study of the electronic and quantum transport properties of hexagonally shaped boron nitride (h-BN) clusters embedded in either zigzag or armchair graphene nanoribbons. Chemical doping of the h-BN cluster was taken into consideration by using carbon atoms to replace either the boron ({{{B}}}24{{{N}}}27{{{C}}}3) or the nitrogen ({{{B}}}27{{{N}}}24{{{C}}}3) sites in the central ring. While the quantum conductance of the system with zigzag edges is found to be spin-dependent, it was observed that the system with an armchair edge requires an electron imbalance in order to show a spin-dependent conductance. Furthermore, the possibility of molecular adsorption onto these doped systems is studied. The effects of the attached molecules to the quantum conductance shows the potential of these hybrid systems for molecular sensing applications.

  4. Chemical reaction of hexagonal boron nitride and graphite nanoclusters in mechanical milling systems

    Energy Technology Data Exchange (ETDEWEB)

    Muramatsu, Y.; Grush, M.; Callcott, T.A. [Univ. of Tennessee, Knoxville, TN (United States)] [and others

    1997-04-01

    Synthesis of boron-carbon-nitride (BCN) hybrid alloys has been attempted extensively by many researchers because the BCN alloys are considered an extremely hard material called {open_quotes}super diamond,{close_quotes} and the industrial application for wear-resistant materials is promising. A mechanical alloying (MA) method of hexagonal boron nitride (h-BN) with graphite has recently been studied to explore the industrial synthesis of the BCN alloys. To develop the MA method for the BCN alloy synthesis, it is necessary to confirm the chemical reaction processes in the mechanical milling systems and to identify the reaction products. Therefore, the authors have attempted to confirm the chemical reaction process of the h-BN and graphite in mechanical milling systems using x-ray absorption near edge structure (XANES) methods.

  5. Atomic Resolution Transmission Electron Microscopy of Defects in Hexagonal Boron Nitride and Graphene

    Science.gov (United States)

    Gibb, Ashley; Alem, Nasim; Song, Chengyu; Ciston, Jim; Zettl, Alex

    2014-03-01

    Monolayer sheets of sp2-bonded materials such as graphene and hexagonal boron nitride (h-BN) have been studied extensively due to their properties including high mechanical strength, thermal conductivity, stability, interesting electronic properties, and potential for integration into novel devices. Understanding the atomic scale structure of defects in these materials is important because defects can significantly affect the physical properties in these materials. In particular, understanding the dynamics of these defects explains much about the material's stability. We have synthesized h-BN and graphene using low pressure chemical vapor deposition and imaged defects using atomic resolution aberration corrected transmission electron microscopy.

  6. Effect of Structural Relaxation on the Electronic Structure of Graphene on Hexagonal Boron Nitride.

    Science.gov (United States)

    Slotman, G J; van Wijk, M M; Zhao, Pei-Liang; Fasolino, A; Katsnelson, M I; Yuan, Shengjun

    2015-10-30

    We performed calculations of electronic, optical, and transport properties of graphene on hexagonal boron nitride with realistic moiré patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be crucially important for electronic properties. We describe experimentally observed features such as additional Dirac points and the "Hofstadter butterfly" structure of energy levels in a magnetic field. We find that the electronic structure is sensitive to many-body renormalization of the local energy gap. PMID:26565485

  7. Search for giant magnetic anisotropy in transition-metal dimers on defected hexagonal boron nitride sheet.

    Science.gov (United States)

    Li, J; Wang, H; Hu, J; Wu, R Q

    2016-05-28

    Structural and magnetic properties of many transition-metal dimers embedded in a defected hexagonal boron nitride monolayer are investigated through density functional calculations to search for systems with magnetic anisotropy energies (MAEs) larger than 30meV. In particular, Ir-Ir@Dh-BN is found to have both large MAE (∼126 meV) and high structural stability against dissociation and diffusion, and it hence can serve as magnetic unit in spintronics and quantum computing devices. This giant MAE mainly results from the spin orbit coupling and the magnetization of the upper Ir atom, which is in a rather isolated environment. PMID:27250322

  8. Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal

    OpenAIRE

    Sharma, Subash; Kalita, Golap; Vishwakarma, Riteshkumar; Zulkifli, Zurita; Tanemura, Masaki

    2015-01-01

    In-plane heterostructure of monolayer hexagonal boron nitride (h-BN) and graphene is of great interest for its tunable bandgap and other unique properties. Here, we reveal a H2-induced etching process to introduce triangular hole in triangular-shaped chemical vapor deposited individual h-BN crystal. In this study, we synthesized regular triangular-shaped h-BN crystals with the sizes around 2-10 μm on Cu foil by chemical vapor deposition (CVD). The etching behavior of individual h-BN crystal w...

  9. Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces

    OpenAIRE

    Gopalan, Devashish P.; Mende, Patrick C.; de la Barrera, Sergio C.; Dhingra, Shonali; Jun LI; Zhang, Kehao; Simonson, Nicholas A.; Robinson, Joshua A.; Lu, Ning; Wang, Qingxiao; Kim, Moon J.; D'Urso, Brian; Feenstra, Randall M.

    2015-01-01

    Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the experiment was to form hexagonal boron nitride (h-BN) on top of the graphene, such layers were not obtained. Rather, in isolated surface areas, h-BN is found to form micrometer-size islands that substitute for the graphene. Additionally, over nearly the entire surface, the properties of the layer that was originally...

  10. Single Crystalline Film of Hexagonal Boron Nitride Atomic Monolayer by Controlling Nucleation Seeds and Domains

    OpenAIRE

    Qinke Wu; Ji-Hoon Park; Sangwoo Park; Seong Jun Jung; Hwansoo Suh; Noejung Park; Winadda Wongwiriyapan; Sungjoo Lee; Young Hee Lee; Young Jae Song

    2015-01-01

    A monolayer hexagonal boron nitride (h-BN) film with controllable domain morphology and domain size (varying from less than 1 μm to more than 100 μm) with uniform crystalline orientation was successfully synthesized by chemical vapor deposition (CVD). The key for this extremely large single crystalline domain size of a h-BN monolayer is a decrease in the density of nucleation seeds by increasing the hydrogen gas flow during the h-BN growth. Moreover, the well-defined shape of h-BN flakes can ...

  11. Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

    International Nuclear Information System (INIS)

    We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable

  12. Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

    Energy Technology Data Exchange (ETDEWEB)

    Gaskell, J.; Fromhold, T. M.; Greenaway, M. T. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Eaves, L. [School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom); Novoselov, K. S.; Mishchenko, A. [School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom); Geim, A. K. [School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom); Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL (United Kingdom)

    2015-09-07

    We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

  13. Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

    Science.gov (United States)

    Gaskell, J.; Eaves, L.; Novoselov, K. S.; Mishchenko, A.; Geim, A. K.; Fromhold, T. M.; Greenaway, M. T.

    2015-09-01

    We assess the potential of two-terminal graphene-hexagonal boron nitride-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit impedances. Our results indicate that current oscillations with frequencies of up to several hundred GHz should be achievable.

  14. Topological phase transition in hexagonal boron-nitride bilayers modulated by gate voltage

    Science.gov (United States)

    Jin, Guojun; Zhai, Xuechao

    2013-03-01

    We study the gate-voltage modulated electronic properties of hexagonal boron-nitride bilayers with two different stacking structures in the presence of intrinsic and Rashba spin-orbit interactions. Our analytical results show that there are striking cooperation effects arising from the spin-orbit interactions and the interlayer bias voltage. For realizing topological phase transition, in contrast to a gated graphene bilayer for increasing its energy gap, the energy gap of a boron-nitride bilayer is significantly reduced by an applied gate voltage. For the AA stacking-bilayer which has the inversion symmetry, a strong topological phase is found, and there is an interesting reentrant behavior from a normal phase to a topological phase and then to a normal phase again, characterized by the topological index. Therefore, the gate voltage modulated AA-boron nitride bilayer can be taken as a newcomer of the topological insulator family. For the AB stacking-bilayer which is lack of the inversion symmetry, it is always topologically trivial, but exhibits an unusual quantum Hall phase with four degenerate low-energy states localized at a single edge. It is suggested that these theoretical findings could be verified experimentally in the transport properties of boron-nitride bylayers. This research was supported by the NSFC (Nos. 60876065, 11074108), PAPD, and NBRPC (Nos. 2009CB929504, 2011CB922102).

  15. Enhancing Thermal Conductivity of Hexagonal Boron Nitride Filled Thermoplastics for Thermal Interface Management

    Science.gov (United States)

    Prindl, John

    Hexagonal Boron Nitride has been shown to enhance thermal conductivity in polymer composites more so than conventional ceramic fillers. However, to see a significant increase in thermal conductivity a high loading level of the advanced ceramic is often needed which can have an adverse effect on the mechanical behavior of the composite part. Applications for thermal management using thermal interface materials (TIM) continue to grow with thermoplastic injection molded parts emerging as an area for market growth. There is a growing need for published technical data in this particular area of application. In the current study, the thermal conductivity and mechanical behavior of hexagonal Boron Nitride (hBN) loaded thermoplastic composites is investigated. The main objectives of this work is produce a novel data package which illustrates the effects of hBN, loaded at high concentrations, across several different thermoplastic resins with the ultimate goal being to find a desirable formulation for specific thermal management applications. The desired properties for such applications being high thermal conductivity and high electrical resistivity with a minimal decrease in mechanical properties. Hexagonal BN cooling filler agglomerates were compounded into polypropylene (PP), nylon-6 (PA-6), and thermoplastic elastomer (TPE) via twin-screw extruder at 3 different loading levels. Injection molded samples were produced and characterized to show varying degrees of thermal conductivity and mechanical strength. Results from this research showed that in all cases, the thermal conductivity increased with increasing levels of hBN addition. The largest increases in thermal conductivity were seen in the PA-6 and TPE systems with the possible indication of exceeding the percolation threshold in the TPE system. This is hypothesized to occur due to the preferential migration of hBN to form conduction pathways around the elastomeric domains in the TPE matrix. Though TPE produced

  16. The preparation of high-adsorption, spherical, hexagonal boron nitride by template method

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

    2014-11-15

    Highlights: • The high-adsorption, spherical, hexagonal boron nitride powders were prepared. • The influence mechanism of template content on the micro-morphology and adsorption was explored. • At appropriate synthesis temperature, higher adsorption mesoporous spheres h-BN began to form. - Abstract: This research used low-cost boric acid and borax as a source of boron, urea as a nitrogen source, dodecyl-trimethyl ammonium chloride (DTAC) as a template, and thus prepared different micro-morphology hexagonal boron nitride powders under a flowing ammonia atmosphere at different nitriding temperatures. The effects of the template content and nitriding temperature on the micro-morphology of hexagonal boron nitride were studied and the formation mechanism analysed. The influences of the template content and nitriding temperature on adsorption performance were also explored. The results showed that at a nitriding temperature of 675 °C, the micro-morphologies of h-BN powder were orderly, inhomogeneous spherical, uniform spherical, beam, and pie-like with increasing template content. The micro-morphology was inhomogeneous spherical at a DTAC dose of 7.5%. The micro-morphology was uniform spherical at a DTAC dose of 10%. At a DTAC dose of 12%, the micro-morphology was a mixture of beam and pie-like shapes. At a certain template content (DTAC at 10%) and at lower nitriding temperatures (625 °C and 650 °C), spherical shell structures with surface subsidence began to form. The porous spheres would appear at a nitriding temperature of 675 °C, and the ball diameter thus formed was approximately 500–600 nm. The ball diameter was about 600–700 nm when the nitriding temperature was 700 °C. At a nitriding temperature of 725 °C, the ball diameter was between 800 and 1000 nm and sintering necking started to form. When the relative pressure was higher, previously closed pores opened and connected with the outside world: the adsorption then increased significantly. The

  17. Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures

    Science.gov (United States)

    Sankaran, Kamatchi Jothiramalingam; Hoang, Duc Quang; Kunuku, Srinivasu; Korneychuk, Svetlana; Turner, Stuart; Pobedinskas, Paulius; Drijkoningen, Sien; van Bael, Marlies K.; D' Haen, Jan; Verbeeck, Johan; Leou, Keh-Chyang; Lin, I.-Nan; Haenen, Ken

    2016-07-01

    Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low turn-on field of 15.2 V/μm, a high FEE current density of 1.48 mA/cm2 and life-time up to a period of 248 min. These values are far superior to those for hBNNWs grown on Si substrates without the nNCD interlayer, which have a turn-on field of 46.6 V/μm with 0.21 mA/cm2 FEE current density and life-time of 27 min. Cross-sectional TEM investigation reveals that the utilization of the diamond interlayer circumvented the formation of amorphous boron nitride prior to the growth of hexagonal boron nitride. Moreover, incorporation of carbon in hBNNWs improves the conductivity of hBNNWs. Such a unique combination of materials results in efficient electron transport crossing nNCD-to-hBNNWs interface and inside the hBNNWs that results in enhanced field emission of electrons. The prospective application of these materials is manifested by plasma illumination measurements with lower threshold voltage (370 V) and longer life-time, authorizing the role of hBNNWs-nNCD heterostructures in the enhancement of electron emission.

  18. Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures.

    Science.gov (United States)

    Sankaran, Kamatchi Jothiramalingam; Hoang, Duc Quang; Kunuku, Srinivasu; Korneychuk, Svetlana; Turner, Stuart; Pobedinskas, Paulius; Drijkoningen, Sien; Van Bael, Marlies K; D' Haen, Jan; Verbeeck, Johan; Leou, Keh-Chyang; Lin, I-Nan; Haenen, Ken

    2016-01-01

    Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low turn-on field of 15.2 V/μm, a high FEE current density of 1.48 mA/cm(2) and life-time up to a period of 248 min. These values are far superior to those for hBNNWs grown on Si substrates without the nNCD interlayer, which have a turn-on field of 46.6 V/μm with 0.21 mA/cm(2) FEE current density and life-time of 27 min. Cross-sectional TEM investigation reveals that the utilization of the diamond interlayer circumvented the formation of amorphous boron nitride prior to the growth of hexagonal boron nitride. Moreover, incorporation of carbon in hBNNWs improves the conductivity of hBNNWs. Such a unique combination of materials results in efficient electron transport crossing nNCD-to-hBNNWs interface and inside the hBNNWs that results in enhanced field emission of electrons. The prospective application of these materials is manifested by plasma illumination measurements with lower threshold voltage (370 V) and longer life-time, authorizing the role of hBNNWs-nNCD heterostructures in the enhancement of electron emission. PMID:27404130

  19. Vertically self-ordered orientation of nanocrystalline hexagonal boron nitride thin films for enhanced thermal characteristics

    Science.gov (United States)

    Cometto, Olivier; Sun, Bo; Tsang, Siu Hon; Huang, Xi; Koh, Yee Kan; Teo, Edwin Hang Tong

    2015-11-01

    Vertically self-ordered hexagonal boron nitride (ordered h-BN) is a highly ordered turbostratic BN (t-BN) material similar to hexagonal BN, with its planar structure perpendicularly oriented to the substrate. The ordered h-BN thin films were grown using a High Power Impulse Magnetron Sputtering (HiPIMS) system with a lanthanum hexaboride (LaB6) target reactively sputtered in nitrogen gas. The best vertical alignment was obtained at room temperature, with a grounded bias and a HiPIMS peak power density of 60 W cm-2. Even though the film contains up to 7.5 at% lanthanum, it retains its highly insulative properties and it was observed that an increase in compressive stress is correlated to an increase in film ordering quality. Importantly, the thermal conductivity of vertically ordered h-BN is considerably high at 5.1 W m-1 K-1. The favourable thermal conductivity coupled with the dielectric properties of this novel material and the low temperature growth could outperform SiO2 in high power density electronic applications.Vertically self-ordered hexagonal boron nitride (ordered h-BN) is a highly ordered turbostratic BN (t-BN) material similar to hexagonal BN, with its planar structure perpendicularly oriented to the substrate. The ordered h-BN thin films were grown using a High Power Impulse Magnetron Sputtering (HiPIMS) system with a lanthanum hexaboride (LaB6) target reactively sputtered in nitrogen gas. The best vertical alignment was obtained at room temperature, with a grounded bias and a HiPIMS peak power density of 60 W cm-2. Even though the film contains up to 7.5 at% lanthanum, it retains its highly insulative properties and it was observed that an increase in compressive stress is correlated to an increase in film ordering quality. Importantly, the thermal conductivity of vertically ordered h-BN is considerably high at 5.1 W m-1 K-1. The favourable thermal conductivity coupled with the dielectric properties of this novel material and the low temperature

  20. Controlled growth of few-layer hexagonal boron nitride on copper foils using ion beam sputtering deposition.

    Science.gov (United States)

    Wang, Haolin; Zhang, Xingwang; Meng, Junhua; Yin, Zhigang; Liu, Xin; Zhao, Yajuan; Zhang, Liuqi

    2015-04-01

    Ion beam sputtering deposition (IBSD) is used to synthesize high quality few-layer hexagonal boron nitride (h-BN) on copper foils. Compared to the conventional chemical vapor deposition, the IBSD technique avoids the use of unconventional precursors and is much easier to control, which should be very useful for the large-scale production of h-BN in the future.

  1. Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride

    Science.gov (United States)

    Jo, Insun; Pettes, Michael Thompson; Kim, Jaehyun; Watanabe, Kenji; Taniguchi, Takashi; Yao, Zhen; Shi, Li

    2013-02-01

    The thermal conductivity of suspended few-layer hexagonal boron nitride (h-BN) was measured using a micro-bridge device with built-in resistance thermometers. Based on the measured thermal resistance values of 11-12 atomic layer h-BN samples with suspended length ranging between 3 and 7.5 um, the room-temperature thermal conductivity of a 11-layer sample was found to be about 360 Wm-1K-1, approaching the basal plane value reported for bulk h-BN. The presence of a polymer residue layer on the sample surface was found to decrease the thermal conductivity of a 5-layer h-BN sample to be about 250 Wm-1K-1 at 300 K. Thermal conductivities for both the 5 layer and the 11 layer samples are suppressed at low temperatures, suggesting increasing scattering of low frequency phonons in thin h-BN samples by polymer residue.

  2. High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

    Energy Technology Data Exchange (ETDEWEB)

    Hwan Lee, Seung; Lee, Jia; Ho Ra, Chang; Liu, Xiaochi; Hwang, Euyheon [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Sup Choi, Min [Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Hee Choi, Jun [Frontier Research Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin, Gyeonggi-do 446-711 (Korea, Republic of); Zhong, Jianqiang; Chen, Wei [Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore); Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 (Singapore); Jong Yoo, Won, E-mail: yoowj@skku.edu [Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

    2014-02-03

    A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

  3. Emission and propagation of hyperbolic phonon polaritons in hexagonal boron nitride

    Science.gov (United States)

    Dai, Siyuan; Ma, Qiong; Yang, Yafang; Rosenfeld, Jeremy; Goldflam, Michael; McLeod, Alex; Andersen, Trond; Fei, Zhe; Liu, Mengkun; Sun, Zhiyuan; Shao, Yinming; Watanabe, Kenji; Taniguchi, Takashi; Thiemens, Mark; Keilmann, Fritz; Jarillo-Herrero, Pablo; Fogler, Michael; Basov, D. N.

    Using scattering-type scanning near-field optical microscope (s-SNOM), we studied various kinds of emission and propagation of hyperbolic phonon polaritons (HP2s) in hexagonal boron nitride (hBN). The systematic study via real-space nano-imaging reveals the emission mechanisms and propagating properties of HP2s excited by crystal edges, artificial structures, surface defects and impurities. Compared with traditional s-SNOM tip emitter, the polaritons from new emitters reported in this work possess longer propagation length and can be artificially manipulated on the hBN surface. Our work may benefit the future applications and engineering of HP2s using convenient emitters which are analogous to collective modes in other materials.

  4. Imaging of Anomalous Internal Reflections of Hyperbolic Phonon-Polaritons in Hexagonal Boron Nitride

    Science.gov (United States)

    Giles, Alexander J.; Dai, Siyuan; Glembocki, Orest J.; Kretinin, Andrey V.; Sun, Zhiyuan; Ellis, Chase T.; Tischler, Joseph G.; Taniguchi, Takashi; Watanabe, Kenji; Fogler, Michael M.; Novoselov, Kostya S.; Basov, Dimitri. N.; Caldwell, Joshua D.

    2016-06-01

    We use scanning near-field optical microscopy to study the response of hexagonal boron nitride nanocones at infrared frequencies, where this material behaves as a hyperbolic medium. The obtained images are dominated by a series of hot rings that occur on the sloped sidewalls of the nanocones. The ring positions depend on the incident laser frequency and the nanocone shape. Both dependences are consistent with directional propagation of hyperbolic phonon polariton rays that are launched at the edges and zigzag through the interior of the nanocones, sustaining multiple internal reflections off the sidewalls. Additionally, we observe a strong overall enhancement of the near-field signal at discrete resonance frequencies. These resonances attest to low dielectric losses that permit coherent standing waves of the sub-diffractional polaritons to form. We comment on potential applications of such shape-dependent resonances and the field concentration at the hot rings.

  5. Decoupled electron and phonon transports in hexagonal boron nitride-silicene bilayer heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Yongqing; Pei, Qing-Xiang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg; Zhang, Gang, E-mail: peiqx@ihpc.a-star.edu.sg, E-mail: zhangg@ihpc.a-star.edu.sg; Zhang, Yong-Wei [Institute of High Performance Computing, A*STAR, Singapore 138632 (Singapore)

    2016-02-14

    Calculations based on the density functional theory and empirical molecular dynamics are performed to investigate interlayer interaction, electronic structure and thermal transport of a bilayer heterostructure consisting of silicene and hexagonal boron nitride (h-BN). In this heterostructure, the two layers are found to interact weakly via a non-covalent binding. As a result, the Dirac cone of silicene is preserved with the Dirac cone point being located exactly at the Fermi level, and only a small amount of electrons are transferred from h-BN to silicene, suggesting that silicene dominates the electronic transport. Molecular dynamics calculation results demonstrate that the heat current along h-BN is six times of that along silicene, suggesting that h-BN dominates the thermal transport. This decoupled role of h-BN and silicene in thermal and electronic transport suggests that the BN-silicene bilayer heterostructure is promising for thermoelectric applications.

  6. Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers

    Science.gov (United States)

    Singh, Simranjeet; Katoch, Jyoti; Xu, Jinsong; Tan, Cheng; Zhu, Tiancong; Amamou, Walid; Hone, James; Kawakami, Roland

    2016-09-01

    We present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection. While h-BN is expected to be favorable for spin injection, previous experimental studies have been unable to achieve spin relaxation times in the nanosecond regime, suggesting potential problems originating from the contacts. Here, we investigate spin relaxation in graphene spin valves with h-BN barriers and observe room temperature spin lifetimes in excess of a nanosecond, which provides experimental confirmation that h-BN is indeed a good barrier material for spin injection into graphene. By carrying out measurements with different thicknesses of h-BN, we show that few layer h-BN is a better choice than monolayer for achieving high non-local spin signals and longer spin relaxation times in graphene.

  7. Evidence for Defect-Mediated Tunneling in Hexagonal Boron Nitride-Based Junctions.

    Science.gov (United States)

    Chandni, U; Watanabe, K; Taniguchi, T; Eisenstein, J P

    2015-11-11

    We investigate electron tunneling through atomically thin layers of hexagonal boron nitride (hBN). Metal (Cr/Au) and semimetal (graphite) counter-electrodes are employed. While the direct tunneling resistance increases nearly exponentially with barrier thickness as expected, the thicker junctions also exhibit clear signatures of Coulomb blockade, including strong suppression of the tunnel current around zero bias and step-like features in the current at larger biases. The voltage separation of these steps suggests that single-electron charging of nanometer-scale defects in the hBN barrier layer are responsible for these signatures. We find that annealing the metal-hBN-metal junctions removes these defects and the Coulomb blockade signatures in the tunneling current. PMID:26509431

  8. Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric

    Science.gov (United States)

    Jang, Sung Kyu; Youn, Jiyoun; Song, Young Jae; Lee, Sungjoo

    2016-07-01

    Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a critical partial pressure of the borazine precursor, whereas a thick h-BN layer (thicker than a critical thickness of 10 nm) was grown beyond a critical partial pressure. An interesting coincidence of a critical thickness of 10 nm was identified in both the CVD growth behavior and in the breakdown electric field strength and leakage current mechanism, indicating that the electrical properties of the CVD h-BN film depended significantly on the film growth mode and the resultant film quality.

  9. Exploring carrier transport phenomena in a CVD-assembled graphene FET on hexagonal boron nitride

    International Nuclear Information System (INIS)

    The supporting substrate plays a crucial role in preserving the superb electrical characteristics of an atomically thin 2D carbon system. We explore carrier transport behavior in a chemical-vapor-deposition- (CVD-) assembled graphene monolayer on hexagonal boron nitride (h-BN) substrate. Graphene-channel field-effect transistors (GFETs) were fabricated on ultra-thin h-BN multilayers to screen out carrier scattering from the underlying SiO2 substrate. To explore the transport phenomena, we use three different approaches to extract carrier mobility, namely, effective carrier mobility (μeff), intrinsic carrier mobility (μ), and field-effect mobility (μFE). A comparative study has been conducted based on the electrical characterization results, uncovering the impacts of supporting substrate material and device geometry scaling on carrier mobility in GFETs with CVD-assembled graphene as the active channel. (paper)

  10. Engineering and localization of quantum emitters in large hexagonal boron nitride layers

    CERN Document Server

    Choi, Sumin; ElBadawi, Christopher; Lobo, Charlene; Wang, Xuewen; Juodkazis, Saulius; Seniutinas, Gediminas; Toth, Milos; Aharonovich, Igor

    2016-01-01

    Hexagonal boron nitride (hBN) is a wide bandgap van der Waals material that has recently emerged as promising platform for quantum photonics experiments. In this work we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of microns wide) of hBN. The emitters can be activated in as-grown hBN by electron irradiation or high temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at edges of the flakes, unlike most luminescent point defects in 3D materials. Our results constitute an important step on the road map of deploying hBN in nanophotonics applications.

  11. The electronic structure of graphene tuned by hexagonal boron nitrogen layers: Semimetal-semiconductor transition

    Science.gov (United States)

    Liu, Ming-Yang; Chen, Qing-Yuan; Ma, Tai; He, Yao; Cao, Chao

    2016-05-01

    The electronic structure of graphene and hexagonal boron nitrogen (G/h-BN) systems have been carefully investigated using the pseudo-potential plane-wave within density functional theory (DFT) framework. We find that the stacking geometries and interlayer distances significantly affect the electronic structure of G/h-BN systems. By studying four stacking geometries, we conclude that the monolayer G/h-BN systems should possess metallic electronic properties. The monolayer G/h-BN systems can be transited from metallicity to semiconductor by increasing h-BN layers. It reveals that the alteration of interlayer distances 2.50-3.50 Å can obtain the metal-semiconductor-semimetal variation and a tunable band gap for G/h-BN composite systems. The band dispersion along K-H direction is analogous to the band of rhombohedral graphite when the G/h-BN systems are semiconducting.

  12. Investigation of hexagonal boron nitride as an atomically thin corrosion passivation coating in aqueous solution

    Science.gov (United States)

    Zhang, Jing; Yang, Yingchao; Lou, Jun

    2016-09-01

    Hexagonal boron nitride (h-BN) atomic layers were utilized as a passivation coating in this study. A large-area continuous h-BN thin film was grown on nickel foil using a chemical vapor deposition method and then transferred onto sputtered copper as a corrosion passivation coating. The corrosion passivation performance in a Na2SO4 solution of bare and coated copper was investigated by electrochemical methods including cyclic voltammetry (CV), Tafel polarization and electrochemical impedance spectroscopy (EIS). CV and Tafel analysis indicate that the h-BN coating could effectively suppress the anodic dissolution of copper. The EIS fitting result suggests that defects are the dominant leakage source on h-BN films, and improved anti-corrosion performances could be achieved by further passivating these defects.

  13. Effects of strain on carbon donors and acceptors in hexagonal boron nitride monolayers

    Science.gov (United States)

    Fujimoto, Yoshitaka; Saito, Susumu

    2016-01-01

    We present first-principles density functional calculations that clarify the electronic properties of carbon defects in hexagonal boron nitride (h -BN) monolayers under biaxially applied strains. We find that strain can control the ionization energies of both donor and acceptor states. Furthermore, we also find that strain can lead to the dramatic change in conduction channel properties of donor states due to the interchange of the conduction-band-minimum state with the nearly-free-electron state. We also report the simulated scanning tunneling microscopy (STM) images of carbon defects in h -BN monolayers for experimental identification of those defects. We show that the STM images strongly reflect distinctive spatial distributions of local density of states around carbon defects depending on the substitution sites and thereby they could be identified by using STM experiments.

  14. Surface functionalization of hexagonal boron nitride and its effect on the structure and performance of composites

    Science.gov (United States)

    Jin, Wenqin; Zhang, Wei; Gao, Yuwen; Liang, Guozheng; Gu, Aijuan; Yuan, Li

    2013-04-01

    A new organized hexagonal boron nitride (OhBN) with significantly increased amount of amine groups was synthesized, and characterized by Fourier Transform Infrared (FTIR), X-ray Photoelectron Spectroscopy (XPS), Thermogravimetric (TG) analysis, UV-vis Transmittance Spectra, Transmission Electron Microscope (TEM) and the potentiometric titration. The content of amine groups for OhBN is about 5 times of that for original hexagonal boron nitride (hBN). Based on the preparation of OhBN, new composites consisting of OhBN and bismaleimide (BD) resin were developed, which show greatly improved integrated performance (including dynamic mechanical, dielectric and thermal properties) compared with BD resin and the hBN/BD composites. In the case of the OhBN/BD composite with 15 wt% OhBN, its storage modulus, dielectric loss, thermal conductivity and coefficient of thermal expansion are about 1.2, 0.56, 1.11 and 0.92 times of the corresponding values of hBN/BD composite, respectively; moreover, the glass transition temperature of the former is 15 °C higher than that of the latter. These interesting results suggest that the integrated performance of the composites is closely related to the surface nature of the fillers because the change in the surface nature not only varies the chemical structure, free volume and crosslinking density of the composite, but also determines the interfacial nature between inorganic fillers and the resin matrix. This investigation demonstrates that the method proposed herein provides a new approach to prepare organized inorganic fillers as well as corresponding composites with controlled structure and expected performances for cutting-edge industries.

  15. Surface functionalization of hexagonal boron nitride and its effect on the structure and performance of composites

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Wenqin; Zhang, Wei; Gao, Yuwen [Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, Department of Materials Science and Engineering, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Liang, Guozheng, E-mail: lgzheng@suda.edu.cn [Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, Department of Materials Science and Engineering, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Gu, Aijuan, E-mail: ajgu@suda.edu.cn [Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, Department of Materials Science and Engineering, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China); Yuan, Li [Jiangsu Key Laboratory of Advanced Functional Polymer Design and Application, Department of Materials Science and Engineering, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou 215123 (China)

    2013-04-01

    A new organized hexagonal boron nitride (OhBN) with significantly increased amount of amine groups was synthesized, and characterized by Fourier Transform Infrared (FTIR), X-ray Photoelectron Spectroscopy (XPS), Thermogravimetric (TG) analysis, UV–vis Transmittance Spectra, Transmission Electron Microscope (TEM) and the potentiometric titration. The content of amine groups for OhBN is about 5 times of that for original hexagonal boron nitride (hBN). Based on the preparation of OhBN, new composites consisting of OhBN and bismaleimide (BD) resin were developed, which show greatly improved integrated performance (including dynamic mechanical, dielectric and thermal properties) compared with BD resin and the hBN/BD composites. In the case of the OhBN/BD composite with 15 wt% OhBN, its storage modulus, dielectric loss, thermal conductivity and coefficient of thermal expansion are about 1.2, 0.56, 1.11 and 0.92 times of the corresponding values of hBN/BD composite, respectively; moreover, the glass transition temperature of the former is 15 °C higher than that of the latter. These interesting results suggest that the integrated performance of the composites is closely related to the surface nature of the fillers because the change in the surface nature not only varies the chemical structure, free volume and crosslinking density of the composite, but also determines the interfacial nature between inorganic fillers and the resin matrix. This investigation demonstrates that the method proposed herein provides a new approach to prepare organized inorganic fillers as well as corresponding composites with controlled structure and expected performances for cutting-edge industries.

  16. Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux technique

    Science.gov (United States)

    Edgar, J. H.; Hoffman, T. B.; Clubine, B.; Currie, M.; Du, X. Z.; Lin, J. Y.; Jiang, H. X.

    2014-10-01

    The optical and physical properties of hexagonal boron nitride single crystals grown from a molten metal solution are reported. The hBN crystals were grown by precipitation from a nickel-chromium flux with a boron nitride source, by slowly cooling from 1500 °C at 2-4 °C/h under a nitrogen flow at atmospheric pressure. The hBN crystals formed on the surface of the flux with an apparent crystal size up to 1-2 mm in diameter. Individual grains were as large as 100-200 μm across. Typically, the flakes removed from the metal were 6-20 μm thick. Optical absorption measurements suggest a bandgap of 5.8 eV by neglecting the binding energy of excitons in hBN. The highest energy photoluminescence peak was at 5.75 eV at room temperature. The hBN crystals typically had a pit density of 5×106 cm-2 after etching in a molten eutectic mixture of potassium hydroxide and sodium hydroxide. The quality of these crystals suggests they are suitable as substrates for two dimensional materials such as graphene and gallium nitride based devices.

  17. Two-dimensional hexagonal boron nitride as lateral heat spreader in electrically insulating packaging

    Science.gov (United States)

    Bao, Jie; Edwards, Michael; Huang, Shirong; Zhang, Yong; Fu, Yifeng; Lu, Xiuzhen; Yuan, Zhichao; Jeppson, Kjell; Liu, Johan

    2016-07-01

    The need for electrically insulating materials with a high in-plane thermal conductivity for lateral heat spreading applications in electronic devices has intensified studies of layered hexagonal boron nitride (h-BN) films. Due to its physicochemical properties, h-BN can be utilised in power dissipating devices such as an electrically insulating heat spreader material for laterally redistributing the heat from hotspots caused by locally excessive heat flux densities. In this study, two types of boron nitride based heat spreader test structures have been assembled and evaluated for heat dissipation. The test structures separately utilised a few-layer h-BN film with and without graphene enhancement drop coated onto the hotspot test structure. The influence of the h-BN heat spreader films on the temperature distribution across the surface of the hotspot test structure was studied at a range of heat flux densities through the hotspot. It was found that the graphene-enhanced h-BN film reduced the hotspot temperature by about 8–10 °C at a 1000 W cm‑2 heat flux density, a temperature decrease significantly larger than for h-BN film without graphene enhancement. Finite element simulations of the h-BN film predict that further improvements in heat spreading ability are possible if the thermal contact resistance between the film and test chip are minimised.

  18. Synthesis and characterization of nanocrystalline hexagonal boron carbo-nitride under high temperature and high pressure

    International Nuclear Information System (INIS)

    A study of the synthesis of hexagonal boron carbo-nitride (h-BCN) compounds via a two-step high-temperature and high-pressure (HTHP) technique using melamine (C3N6H6) and boron oxide (B2O3) as raw materials is presented. An amorphous BCN precursor was prepared at 1000 K under vacuum in a resistance furnace and then single-phase h-BCN nanocrystalline was synthesized at 1600 K and 5.1 GPa in a multi-anvil apparatus. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicated that the final products were pure h-BCN crystals with the lattice constants a 0.2510 nm and c = 0.6690 nm. The average grain size was about 150 nm. X-ray photoelectron spectroscopy (XPS) results confirmed the occurrence of bonding between C-C, C-N, C-B and N-B atoms. Raman scattering analysis suggested that there were three strong Raman bands centered at 1359, 1596 and 1617 cm-1, respectively. The band at 1617 cm-1 was considered to be consistent with the characteristic Raman peak of h-BCN

  19. Melting and spheroidization of hexagonal boron nitride in a microwave-powered, atmospheric pressure nitrogen plasma `

    Energy Technology Data Exchange (ETDEWEB)

    Gleiman, S. S. (Seth S.); Phillips, J. (Jonathan)

    2001-01-01

    We have developed a method for producing spherically-shaped, hexagonal phase boron nitride (hBN) particles of controlled diameter in the 10-100 micron size range. Specifically, platelet-shaped hBN particles are passed as an aerosol through a microwave-generated, atmospheric pressure, nitrogen plasma. In the plasma, agglomerates formed by collisions between input hBN particles, melt and forms spheres. We postulate that this unprecedented process takes place in the unique environment of a plasma containing a high N-atom concentration, because in such an environment the decomposition temperature can be raised above the melting temperature. Indeed, given the following relationship [1]: BN{sub (condensed)} {leftrightarrow} B{sub (gas)} + N{sub (gas)}. Standard equilibrium thermodynamics indicate that the decomposition temperature of hBN is increased in the presence of high concentrations of N atoms. We postulate that in our plasma system the N atom concentration is high enough to raise the decomposition temperature above the (undetermined) melting temperature. Keywords Microwave plasma, boron nitride, melting, spherical, thermodynamics, integrated circuit package.

  20. Dielectric and thermal properties of isotactic polypropylene/hexagonal boron nitride composites for high-frequency applications

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Susumu, E-mail: 143453501@ccalumni.meijo-u.ac.jp [Graduate School of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 4688502 (Japan); Imai, Yusuke [National Institute of Advanced Industrial Science and Technology (AIST), 2268-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560 (Japan); Kan, Akinori [Graduate School of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 4688502 (Japan); Hotta, Yuji [National Institute of Advanced Industrial Science and Technology (AIST), 2268-98 Anagahora, Shimoshidami, Moriyama-ku, Nagoya 463-8560 (Japan); Ogawa, Hirotaka [Graduate School of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 4688502 (Japan)

    2014-12-05

    Highlights: • The degree of orientation of the hBN could be controlled by the fabrication process. • The dielectric constants of composites ranged between 2.25 and 3.39. • The dielectric loss of composites was on the order of 10{sup −4} for all compositions. • The thermal conductivity were improved by controlling orientation of hBN. - Abstract: Dielectric composites aimed for high frequency applications were prepared by using anisotropic hexagonal boron nitride (hBN) particles as a fillers and isotactic polypropylene (iPP) as polymer matrix. Dielectric and thermal properties of the composites were studied, focusing on the filler orientation in the plate-shape specimens and filler concentration up to 40 vol%. The degree of orientation of the filler was controlled by the composite fabrication process. Hot-pressing gave relatively random orientation of the filler in the matrix, while injection molding induced a high orientation. Dielectric constant (ε{sub r}) of the composites ranged between 2.25 and 3.39. The estimation of ε{sub r} based on the Bruggeman mixing model agreed well with the measured value. Low dielectric losses (tan δ) at microwave frequencies, on the order of 10{sup −4}, were obtained for all the compositions. Through-thickness thermal conductivity (k) of the hot-pressed samples showed a drastic increase with increasing the filler concentration, reaching up to 2.1 W/m K at 40 vol% of hBN. The filler concentration dependence of k was less significant for the injection molded composites. In-plane thermal expansion was almost independent on the filler orientation, while the coefficient of thermal expansion for the thickness direction of the hot-pressed sample was reduced to approximately half of the injection molded counterpart. These differences in thermal conductivity and thermal expansion are thought to arise from the difference in hBN filler orientation.

  1. Dielectric and thermal properties of isotactic polypropylene/hexagonal boron nitride composites for high-frequency applications

    International Nuclear Information System (INIS)

    Highlights: • The degree of orientation of the hBN could be controlled by the fabrication process. • The dielectric constants of composites ranged between 2.25 and 3.39. • The dielectric loss of composites was on the order of 10−4 for all compositions. • The thermal conductivity were improved by controlling orientation of hBN. - Abstract: Dielectric composites aimed for high frequency applications were prepared by using anisotropic hexagonal boron nitride (hBN) particles as a fillers and isotactic polypropylene (iPP) as polymer matrix. Dielectric and thermal properties of the composites were studied, focusing on the filler orientation in the plate-shape specimens and filler concentration up to 40 vol%. The degree of orientation of the filler was controlled by the composite fabrication process. Hot-pressing gave relatively random orientation of the filler in the matrix, while injection molding induced a high orientation. Dielectric constant (εr) of the composites ranged between 2.25 and 3.39. The estimation of εr based on the Bruggeman mixing model agreed well with the measured value. Low dielectric losses (tan δ) at microwave frequencies, on the order of 10−4, were obtained for all the compositions. Through-thickness thermal conductivity (k) of the hot-pressed samples showed a drastic increase with increasing the filler concentration, reaching up to 2.1 W/m K at 40 vol% of hBN. The filler concentration dependence of k was less significant for the injection molded composites. In-plane thermal expansion was almost independent on the filler orientation, while the coefficient of thermal expansion for the thickness direction of the hot-pressed sample was reduced to approximately half of the injection molded counterpart. These differences in thermal conductivity and thermal expansion are thought to arise from the difference in hBN filler orientation

  2. Synthesis of few-layer, large area hexagonal-boron nitride by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Glavin, Nicholas R. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States); Jespersen, Michael L. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); University of Dayton Research Institute, 300 College Park, Dayton, OH 45469 (United States); Check, Michael H. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); Hu, Jianjun [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); University of Dayton Research Institute, 300 College Park, Dayton, OH 45469 (United States); Hilton, Al M. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States); Wyle Laboratories, Dayton, OH 45433 (United States); Fisher, Timothy S. [School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907 (United States); Voevodin, Andrey A. [Nanoelectronic Materials Branch, Air Force Research Laboratory, Wright-Patterson AFB, Dayton, OH 45433 (United States)

    2014-12-01

    Pulsed laser deposition (PLD) has been investigated as a technique for synthesis of ultra-thin, few-layer hexagonal boron nitride (h-BN) thin films on crystalline highly ordered pyrolytic graphite (HOPG) and sapphire (0001) substrates. The plasma-based processing technique allows for increased excitations of deposited atoms due to background nitrogen gas collisional ionizations and extended resonance time of the energetic species presence at the condensation surface. These processes permit growth of thin, polycrystalline h-BN at 700 °C, a much lower temperature than that required by traditional growth methods. Analysis of the as-deposited films reveals epitaxial-like growth on the nearly lattice matched HOPG substrate, resulting in a polycrystalline h-BN film, and amorphous BN (a-BN) on the sapphire substrates, both with thicknesses of 1.5–2 nm. Stoichiometric films with boron-to-nitrogen ratios of unity were achieved by adjusting the background pressure within the deposition chamber and distance between the target and substrate. The reduction in deposition temperature and formation of stoichiometric, large-area h-BN films by PLD provide a process that is easily scaled-up for two-dimensional dielectric material synthesis and also present a possibility to produce very thin and uniform a-BN. - Highlights: • PLD was used to synthesize boron nitride thin films on HOPG and sapphire substrates. • Lattice matched substrate allowed for formation of polycrystalline h-BN. • Nitrogen gas pressure directly controlled film chemistry and structure. • Technique allows for ultrathin, uniform films at reduced processing temperatures.

  3. First-principles study of the effects of mechanical strains on the radiation hardness of hexagonal boron nitride monolayers

    Science.gov (United States)

    Peng, Qing; Ji, Wei; de, Suvranu

    2012-12-01

    We investigate the strain effect on the radiation hardness of hexagonal boron nitride (h-BN) monolayers using density functional theory calculations. Both compressive and tensile strains are studied in elastic domains along the zigzag, armchair, and biaxial directions. We observe a reduction in radiation hardness to form boron and nitrogen monovacancies under all strains. The origin of this effect is the strain-induced reduction of the energy barrier to displace an atom. An implication of our results is the vulnerability of strained nanomaterials to radiation damage.

  4. Phonon transport at the interfaces of vertically stacked graphene and hexagonal boron nitride heterostructures.

    Science.gov (United States)

    Yan, Zhequan; Chen, Liang; Yoon, Mina; Kumar, Satish

    2016-02-21

    Hexagonal boron nitride (h-BN) is a promising substrate for graphene based nano-electronic devices. We investigate the ballistic phonon transport at the interface of vertically stacked graphene and h-BN heterostructures using first principles density functional theory and atomistic Green's function simulations considering the influence of lattice stacking. We compute the frequency and wave-vector dependent transmission function and observe distinct stacking-dependent phonon transmission features for the h-BN/graphene/h-BN sandwiched systems. We find that the in-plane acoustic modes have the dominant contributions to the phonon transmission and thermal boundary conductance (TBC) for the interfaces with the carbon atom located directly on top of the boron atom (C-B matched) because of low interfacial spacing. The low interfacial spacing is a consequence of the differences in the effective atomic volume of N and B and the difference in the local electron density around N and B. For the structures with the carbon atom directly on top of the nitrogen atom (C-N matched), the spatial distance increases and the contribution of in-plane modes to the TBC decreases leading to higher contributions by out-of-plane acoustic modes. We find that the C-B matched interfaces have stronger phonon-phonon coupling than the C-N matched interfaces, which results in significantly higher TBC (more than 50%) in the C-B matched interface. The findings in this study will provide insights to understand the mechanism of phonon transport at h-BN/graphene/h-BN interfaces, to better explain the experimental observations and to engineer these interfaces to enhance heat dissipation in graphene based electronic devices. PMID:26817419

  5. Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

    OpenAIRE

    Song, Xiuju; Gao, Junfeng; Gao, Teng; Nie, Yufeng; Sun, Jingyu; Chen, Yubin; Jin, Chuanhong; Ding, Feng; Zhang, Yanfeng; Liu, Zhongfan

    2015-01-01

    Chemical vapor deposition synthesis of large domain hexagonal boron nitride (h-BN) with uniform thickness on Cu foils is of great challenge, originating from the extremely high nucleation densities and the reverse hydrogen etching competition reaction. We report herein the successful growth of wafer-scale high-quality h-BN monolayer film with the largest single crystalline domain sizes up to 72 micrometer in edge length using a folded Cu enclosure approach. The highly-confined growth space wi...

  6. Controlling Electronic and Geometrical Structure of Honeycomb-Lattice Materials Supported on Metal Substrates : Graphene and Hexagonal Boron Nitride

    OpenAIRE

    Vinogradov, Nikolay

    2013-01-01

    The present thesis is focused on various methods of controlling electronic and geometrical structure of two-dimensional overlayers adsorbed on metal surfaces exemplified by graphene and hexagonal boron nitride (h-BN) grown on transition metal (TM) substrates. Combining synchrotron-radiation-based spectroscopic and various microscopic techniques with in situ sample preparation, we are able to trace the evolution of overlayer electronic and geometrical properties in overlayer/substrate systems,...

  7. Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene.

    Science.gov (United States)

    Shautsova, Viktoryia; Gilbertson, Adam M; Black, Nicola C G; Maier, Stefan A; Cohen, Lesley F

    2016-01-01

    We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enables a polymer-impurity free transfer process and subsequent top encapsulation of large-area CVD-grown graphene. We demonstrate that the CVD hBN layer that is utilized in this transfer technique acts as a buffer layer between the graphene film and supporting polymer layer. We show that the resulting graphene layers possess lower doping concentration, and improved carrier mobilities compared to graphene films produced by conventional transfer methods onto untreated SiO2/Si, SAM-modified and hBN covered SiO2/Si substrates. Moreover, we show that the top hBN layer used in the transfer process acts as an effective top encapsulation resulting in improved stability to ambient exposure. The transfer method is applicable to other CVD-grown 2D materials on copper foils, thereby facilitating the preparation of van der Waals heterostructures with controlled doping. PMID:27443219

  8. Enhanced thermal conductivity and isotope effect in single-layer hexagonal boron nitride

    Science.gov (United States)

    Broido, David; Lindsay, Lucas

    2012-02-01

    We have calculated the lattice thermal conductivity, k, of both naturally occurring and isotopically enriched single layers of hexagonal boron nitride (h-BN) as well as bulk h-BN using an exact numerical solution of the Boltzmann transport equation for phonons [1]. Good agreement is obtained with measured bulk h-BN data [2], and the stronger phonon-phonon scattering identified in these systems explains why their k values are significantly lower than those in graphene and graphite. A reduction in such scattering in the single layer arising mainly from a symmetry-based selection rule leads to a substantial increase in k, with calculated room temperature values of more than 600 W/m-K. Additional enhancement is obtained from isotopic enrichment, which exhibits a strong peak as a function of temperature, with magnitude growing rapidly with crystallite size. [1] L. Lindsay and D. A. Broido, Phys. Rev. B 84, 155421 (2011). [2] E. K. Sichel, R. E. Miller, M. S. Abrahams, and C. J. Buiocchi, Phys. Rev. B 13, 4607 (1976).

  9. Functionalized hexagonal boron nitride nano-coatings for protection of transparent plastics

    Science.gov (United States)

    Van Tran, Thu; Usta, Aybala; Asmatulu, Ramazan

    2016-04-01

    Nanocoating is the result of a coating application of nanomaterials to build a consistent network of molecules in a paint to protect the surfaces of various materials and devices. Hexagonal Boron Nitride (h-BN) is in two dimensional form with excellent thermal, mechanical and chemical properties. These BN nanocoatings are also a thermally insulating material for heat management. After adding functionalized h-BNs into paints or other coatings, they will absorb the harmful UV part of sunlight and prevent coating against the environmental degradations. The impacts of the environmental factors on the coatings can be substantially eliminated. In the present study, h-BNs were modified with [2-(2-Aminoethylamino) propyl] trimethoxysilane and uniformly dispersed into the polyurethane coatings with different amounts, such as 0.1, 0.2, 0.4, and 0.8wt% to increase hardness and water resistance, and decrease the UV degradation level of coatings and transparent plastics. The prepared samples were characterized by using Fourier Transform Infrared Spectroscopy (FTIR), UV-Vis Spectroscopy, Scanning Electron Microscope (SEM), Water Contact Angle, and Differential Scanning Calorimeter (DSC). The test results showed that the nanocoatings with functionalized h-BN provided excellent physical and chemical behaviors against the UV and other physical degradations on the substrates.

  10. Ultra-thin epitaxial films of graphite and hexagonal boron nitride on solid surfaces

    CERN Document Server

    Oshima, C

    1997-01-01

    In this article, we have reviewed the recent progress of the experimental studies on ultra-thin films of graphite and hexagonal boron nitride (h-BN) by using angle-resolved electron spectroscopy together with other techniques. The fundamental properties of these high-quality films are discussed on the basis of the data on dispersion relations of valence electrons, phonon dispersion etc. The interfacial orbital mixing of the pi-state of the monolayer graphite (MG) with the d states of the reactive substrates is the origin for the phonon softening, expansion of the nearest-neighbour C-C distance, modification of the pi-band, low work function, and two-dimensional plasmons with high electron density, etc. In the cases of weak mixing at the interface between the MG and relatively inert substrates, the observed properties of the MG are very close to the bulk ones. In contrast to the case for MG, the interfacial interaction between the h-BN monolayer and the substrate is weak. (author)

  11. Carbon- and crack-free growth of hexagonal boron nitride nanosheets and their uncommon stacking order.

    Science.gov (United States)

    Khan, Majharul Haque; Casillas, Gilberto; Mitchell, David R G; Liu, Hua Kun; Jiang, Lei; Huang, Zhenguo

    2016-09-21

    The quality of hexagonal boron nitride nanosheets (h-BNNS) is often associated with the most visible aspects such as lateral size and thickness. Less obvious factors such as sheet stacking order could also have a dramatic impact on the properties of BNNS and therefore its applications. The stacking order can be affected by contamination, cracks, and growth temperatures. In view of the significance of chemical-vapour-decomposition (CVD) assisted growth of BNNS, this paper reports on strategies to grow carbon- and crack-free BNNS by CVD and describes the stacking order of the resultant BNNS. Pretreatment of the most commonly used precursor, ammonia borane, is necessary to remove carbon contamination caused by residual hydrocarbons. Flattening the Cu and W substrates prior to growth and slow cooling around the Cu melting point effectively facilitate the uniform growth of h-BNNS, as a result of a minimal temperature gradient across the Cu substrate. Confining the growth inside alumina boats effectively minimizes etching of the nanosheet by silica nanoparticles originating from the commonly used quartz reactor tube. h-BNNS grown on solid Cu surfaces using this method adopt AB, ABA, AC', and AC'B stacking orders, which are known to have higher energies than the most stable AA' configuration. These findings identify a pathway for the fabrication of high-quality h-BNNS via CVD and should spur studies on stacking order-dependent properties of h-BNNS.

  12. Self-assembled diacetylene molecular wire polymerization on an insulating hexagonal boron nitride (0001) surface

    Science.gov (United States)

    Makarova, Marina V.; Okawa, Yuji; Verveniotis, Elisseos; Watanabe, Kenji; Taniguchi, Takashi; Joachim, Christian; Aono, Masakazu

    2016-09-01

    The electrical characterization of single-polymer chains on a surface is an important step towards novel molecular device development. The main challenge is the lack of appropriate atomically flat insulating substrates for fabricating single-polymer chains. Here, using atomic force microscopy, we demonstrate that the (0001) surface of an insulating hexagonal boron nitride (h-BN) substrate leads to a flat-lying self-assembled monolayer of diacetylene compounds. The subsequent heating or ultraviolet irradiation can initiate an on-surface polymerization process leading to the formation of long polydiacetylene chains. The frequency of photo-polymerization occurrence on h-BN(0001) is two orders of magnitude higher than that on graphite(0001). This is explained by the enhanced lifetime of the molecular excited state, because relaxation via the h-BN is suppressed due to a large band gap. We also demonstrate that on-surface polymerization on h-BN(0001) is possible even after the lithography process, which opens up the possibility of further electrical investigations.

  13. Solid-state neutron detectors based on thickness scalable hexagonal boron nitride

    CERN Document Server

    Ahmed, Kawser; Weltz, Adam; Lu, James J -Q; Danon, Yaron; Bhat, Ishwara B

    2016-01-01

    This paper reports on the device processing and characterization of hexagonal boron nitride (hBN) based solid-state thermal neutron detectors, where hBN thickness varied from 2.5 to 15 microns. These natural hBN epilayers (with 19.9% B-10) were grown by a low pressure chemical vapor deposition process. Complete dry processing was adopted for the fabrication of these metal-semiconductor-metal (MSM) configuration detectors. These detectors showed intrinsic thermal neutron detection efficiency values of 0.86%, 2.4%, 3.15%, and 4.71% for natural hBN thickness values of 2.5, 7.5, 10, and 15 microns, respectively. Measured efficiencies are very close (more than 92%) to the theoretical maximum efficiencies for corresponding hBN thickness values for these detectors. This clearly shows the hBN thickness scalability of these detectors. A 15-micron thick hBN based MSM detector is expected to yield an efficiency of 21.4%, if enriched hBN (with ~100% B-10) is used instead of natural hBN. These results demonstrate that the...

  14. Hydrogen storage in Li-doped fullerene-intercalated hexagonal boron nitrogen layers

    Science.gov (United States)

    Cheng, Yi-Han; Zhang, Chuan-Yu; Ren, Juan; Tong, Kai-Yu

    2016-10-01

    New materials for hydrogen storage of Li-doped fullerene (C20, C28, C36, C50, C60, C70)-intercalated hexagonal boron nitrogen ( h-BN) frameworks were designed by using density functional theory (DFT) calculations. First-principles molecular dynamics (MD) simulations showed that the structures of the C n -BN ( n = 20, 28, 36, 50, 60, and 70) frameworks were stable at room temperature. The interlayer distance of the h-BN layers was expanded to 9.96-13.59 Å by the intercalated fullerenes. The hydrogen storage capacities of these three-dimensional (3D) frameworks were studied using grand canonical Monte Carlo (GCMC) simulations. The GCMC results revealed that at 77 K and 100 bar (10 MPa), the C50-BN framework exhibited the highest gravimetric hydrogen uptake of 6.86 wt% and volumetric hydrogen uptake of 58.01 g/L. Thus, the hydrogen uptake of the Li-doped C n -intercalated h-BN frameworks was nearly double that of the non-doped framework at room temperature. Furthermore, the isosteric heats of adsorption were in the range of 10-21 kJ/mol, values that are suitable for adsorbing/desorbing the hydrogen molecules at room temperature. At 193 K (-80 °C) and 100 bar for the Li-doped C50-BN framework, the gravimetric and volumetric uptakes of H2 reached 3.72 wt% and 30.08 g/L, respectively.

  15. The defect-induced fracture behaviors of hexagonal boron-nitride monolayer nanosheets under uniaxial tension

    International Nuclear Information System (INIS)

    Due to its excellent mechanical and electrical insulating properties, the hexagonal boron-nitride (h-BN) monolayer nanosheet is regarded as a complementary addition to graphene. However, its mechanical strength can be significantly affected by various defects pre-existing in it, such as a Stone–Wales defect, a vacancy defect, an atomic anti-site defect, etc. In this work, the influences of various pre-existing defects on the fracture behaviors of an h-BN monolayer nanosheet are investigated carefully using molecular dynamics simulation. The results show that the nucleation and evolution of a fracture induced by defects in the h-BN monolayer nanosheet are directional, and that the crack always starts from the location which has a weak bond energy. An unexpected observation is that the defect propagates mostly in the zigzag direction but occasionally in the armchair direction. The fracture strength and the fracture strain of the h-BN monolayer nanosheet are reduced at different extents due to the various pre-existing defects. Additionally, for the defective h-BN monolayer nanosheets, the fracture strength and strain measured in the armchair direction is much higher than the strength found in the zigzag direction. However, the strengths measured in the armchair and zigzag directions for the defect-free h-BN monolayer nanosheets almost are identical which implies that the armchair direction has a stronger ability to resist various defects compared to the zigzag direction. (paper)

  16. Quasiparticle Band Gaps of Graphene and Graphone on Hexagonal Boron Nitride Substrate

    Science.gov (United States)

    Kharche, Neerav; Nayak, Saroj

    2012-02-01

    Graphene holds great promise for post-silicon electronics; however, it faces two main challenges: opening up a band gap and finding a suitable substrate material. Graphene on hexagonal boron nitride (hBN) substrate provides a potential system to overcome these challenges. While theoretical studies suggested a possibility of a finite band gap of graphene on hBN, recent experimental studies find no band gap. We have studied graphene-hBN system using the first-principles density functional method and the many-body perturbation theory within GW approximation [1]. A Bernal stacked graphene on hBN has a band gap on the order of 0.1 eV, which disappears when graphene is misaligned with respect to hBN. The latter is the likely scenario in realistic devices. In contrast, if graphene supported on hBN is hydrogenated, the resulting system (graphone) exhibits band gaps larger than 2.5 eV. The graphone band gap is due to chemical functionalization and is robust in the presence of misalignment, however, it reduces by about 1 eV due to the polarization effects at the graphone/hBN interface.[4pt] [1] N. Kharche and S. K. Nayak, Nano Lett., DOI: 10.1021/nl202725w, (2011).

  17. Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy

    Science.gov (United States)

    Lu, Guangyuan; Wu, Tianru; Yuan, Qinghong; Wang, Huishan; Wang, Haomin; Ding, Feng; Xie, Xiaoming; Jiang, Mianheng

    2015-01-01

    Hexagonal boron nitride (h-BN) has attracted significant attention because of its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapour deposition in earlier reports are always polycrystalline with small grains because of high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm2 by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500 μm2, approximately two orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nanoelectronic applications.

  18. Growth and Contrast of Hexagonal Boron Nitride: From Submonolayer Islands to Multilayer Films

    Science.gov (United States)

    Koepke, Justin; Wood, Joshua; Pop, Eric; Lyding, Joseph

    2013-03-01

    Strong interest in hexagon boron nitride (h-BN) as a substrate for graphene devices or as a template for growth of other layered compounds has motivated recent attempts to synthesize large scale h-BN by chemical vapor deposition (CVD). We synthesize h-BN by low pressure CVD on polycrystalline Cu foil in a hot wall tube furnace with a heated ammonia borane precursor carried downstream by Ar and H2 gas. Transmission electron microscopy (TEM) diffraction patterns show that the resulting growths are highly crystalline, with several layers obtained for longer growth times. Short growth times show that the h-BN nucleates in triangular islands at a higher precursor temperature than previously reported in and a lower temperature than reported in. In-air calcination of the Cu foils after partial h-BN growth allows optical contrast of the previously transparent h-BN islands on the Cu foil. This observed resistance to oxidation suggests that grown h-BN films can serve as an insulating anti-corrosion layer.

  19. Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tay, Roland Yingjie [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Tsang, Siu Hon [Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Loeblein, Manuela; Chow, Wai Leong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); CNRS-International NTU Thales Research Alliance CINTRA UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore, Singapore 637553 (Singapore); Loh, Guan Chee [Institue of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore); Department of Physics, Michigan Technological University, Houghton, Michigan 49931 (United States); Toh, Joo Wah; Ang, Soon Loong [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Teo, Edwin Hang Tong, E-mail: htteo@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore)

    2015-03-09

    Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

  20. MOCVD of hexagonal boron nitride thin films on Si(100) using new single source precursors

    CERN Document Server

    Boo, J H; Yu, K S; Kim, Y S; Kim, Y S; Park, J T

    1999-01-01

    We have been carried out the growth of hexagonal boron nitride (h-BN) thin films on Si(100) substrates by low pressure metal-organic chemical vapor deposition (LPMOCVD) method using triethylborane tert-butylamine complex (TEBTBA), Et sub 3 BNH sub 2 ( sup t Bu), and triethylborane isopropylamine complex (TEBIPA), Et sub 3 BNH sub 2 ( sup t Pr) as a new single molecular precursors in the temperature range of 850 approx 1000 .deg. C. polycrystalline, crack-free h-BN film was successfully grown on Si(100) substrate at 850 .deg. C using TEBTBA. This growth temperature is very lower than those in previous reports. Carbon-rich polycrystalline BN was also obtained at 900 .deg. C from TEBIPA. With increasing substrate temperature to 1000 .deg. C, however, BC sub 4 N-like species are strongly formed along with h-BN and the BN films obtained from both TEBTBA and TEBIPA but almost polycrystalline. To our best knowledge, this is the first report of the growth of h-BN films formed with the new single source precursors of ...

  1. Dry etching techniques for active devices based on hexagonal boron nitride epilayers

    International Nuclear Information System (INIS)

    Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth and angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ∼1.25 μm/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF6 is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing

  2. Dry etching techniques for active devices based on hexagonal boron nitride epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Grenadier, Samuel; Li, Jing; Lin, Jingyu; Jiang, Hongxing [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2013-11-15

    Hexagonal boron nitride (hBN) has emerged as a fundamentally and technologically important material system owing to its unique physical properties including layered structure, wide energy bandgap, large optical absorption, and neutron capture cross section. As for any materials under development, it is necessary to establish device processing techniques to realize active devices based on hBN. The authors report on the advancements in dry etching techniques for active devices based on hBN epilayers via inductively coupled plasma (ICP). The effect of ICP radio frequency (RF) power on the etch rate and vertical side wall profile was studied. The etching depth and angle with respect to the surface were measured using atomic force microscopy showing that an etching rate ∼1.25 μm/min and etching angles >80° were obtained. Profilometer data and scanning electron microscope images confirmed these results. This work demonstrates that SF{sub 6} is very suitable for etching hBN epilayers in RF plasma environments and can serve as a guide for future hBN device processing.

  3. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FETs

    Science.gov (United States)

    Kang, Sangwoo; Fallahazad, Babak; Lee, Kayoung; Movva, Hema; Kim, Kyounghwan; Corbet, Chris; Taniguchi, Takashi; Watanabe, Kenji; Colombo, Luigi; Register, Leonard; Tutuc, Emanuel; Banerjee, Sanjay

    2015-03-01

    We present the operation of a vertical tunneling field effect transistor using a stacked double bilayer graphene (BLG) and hexagonal boron nitride (hBN) heterostructure. The device is fabricated with the so-called Van der Waals transfer method with the edges of the top and bottom BLG flakes being rotationally aligned to roughly 60°. The device shows multiple negative differential resistance (NDR) peaks which can be adjusted through the gate bias. Temperature dependent measurements show that the peak width of the differential conductance broadens and the height lowered when the temperature is increased, which is indicative of resonant tunneling. Through electrostatic calculations, it is shown that the multiple peaks occur when the two conduction bands at the K-point of the top and bottom bilayer graphene become aligned at certain bias conditions. It is also shown that by adjusting the rotational alignment of the bands of the top and bottom BLG through an in-plane magnetic field, the conductance peaks can be broadened. In addition, utilizing the NDR characteristic of the device, one-transistor latch or SRAM operation is demonstrated.

  4. Self-assembled diacetylene molecular wire polymerization on an insulating hexagonal boron nitride (0001) surface.

    Science.gov (United States)

    Makarova, Marina V; Okawa, Yuji; Verveniotis, Elisseos; Watanabe, Kenji; Taniguchi, Takashi; Joachim, Christian; Aono, Masakazu

    2016-09-30

    The electrical characterization of single-polymer chains on a surface is an important step towards novel molecular device development. The main challenge is the lack of appropriate atomically flat insulating substrates for fabricating single-polymer chains. Here, using atomic force microscopy, we demonstrate that the (0001) surface of an insulating hexagonal boron nitride (h-BN) substrate leads to a flat-lying self-assembled monolayer of diacetylene compounds. The subsequent heating or ultraviolet irradiation can initiate an on-surface polymerization process leading to the formation of long polydiacetylene chains. The frequency of photo-polymerization occurrence on h-BN(0001) is two orders of magnitude higher than that on graphite(0001). This is explained by the enhanced lifetime of the molecular excited state, because relaxation via the h-BN is suppressed due to a large band gap. We also demonstrate that on-surface polymerization on h-BN(0001) is possible even after the lithography process, which opens up the possibility of further electrical investigations. PMID:27573286

  5. Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates

    Science.gov (United States)

    Feigelson, Boris N.; Bermudez, Victor M.; Hite, Jennifer K.; Robinson, Zachary R.; Wheeler, Virginia D.; Sridhara, Karthik; Hernández, Sandra C.

    2015-02-01

    Atomically thin two dimensional hexagonal boron nitride (2D h-BN) is one of the key materials in the development of new van der Waals heterostructures due to its outstanding properties including an atomically smooth surface, high thermal conductivity, high mechanical strength, chemical inertness and high electrical resistance. The development of 2D h-BN growth is still in the early stages and largely depends on rapid and accurate characterization of the grown monolayer or few layers h-BN films. This paper demonstrates a new approach to characterizing monolayer h-BN films directly on metal substrates by grazing-incidence infrared reflection absorption spectroscopy (IRRAS). Using h-BN films grown by atmospheric-pressure chemical vapor deposition on Cu and Ni substrates, two new sub-bands are found for the A2u out-of-plane stretching mode. It is shown, using both experimental and computational methods, that the lower-energy sub-band is related to 2D h-BN coupled with substrate, while the higher energy sub-band is related to decoupled (or free-standing) 2D h-BN. It is further shown that this newly-observed fine structure in the A2u mode can be used to assess, quickly and easily, the homogeneity of the h-BN-metal interface and the effects of metal surface contamination on adhesion of the layer.

  6. Thermal diffusivity of hexagonal boron nitride composites based on cross-linked liquid crystalline polyimides.

    Science.gov (United States)

    Shoji, Yu; Higashihara, Tomoya; Tokita, Masatoshi; Morikawa, Junko; Watanabe, Junji; Ueda, Mitsuru

    2013-04-24

    Hexagonal boron nitride (h-BN) composites with the oriented cross-linked liquid crystalline (LC) polyimide have been developed as high thermally conductive materials. Well-dispersed h-BN composite films were obtained, as observed by scanning electron microscopy. The morphology of the composite films was further investigated in detail by the wide-angle X-ray diffraction. The obtained composite films based on the cross-linked LC polyimide showed that the polymer chains vertically aligned in the direction parallel to the films, while those based on the amorphous polyimide showed an isotropic nature. Moreover, the alignment of the cross-linked LC polyimides was maintained, even after increasing the volume fraction of h-BN. This alignment plays an important role in the effective phonon conduction between h-BN and the matrices. Indeed, the thermal diffusivity in the thickness direction of the composite films based on the LC polyimide measured by a temperature wave analysis method was increased to 0.679 mm(2) s(-1) at a 30 vol % h-BN loading, which was higher than that based on the amorphous polyimide. PMID:23506319

  7. Synthesis and applications of two-dimensional hexagonal boron nitride in electronics manufacturing

    Science.gov (United States)

    Bao, Jie; Jeppson, Kjell; Edwards, Michael; Fu, Yifeng; Ye, Lilei; Lu, Xiuzhen; Liu, Johan

    2016-01-01

    In similarity to graphene, two-dimensional (2D) hexagonal boron nitride (hBN) has some remarkable properties, such as mechanical robustness and high thermal conductivity. In addition, hBN has superb chemical stability and it is electrically insulating. 2D hBN has been considered a promising material for many applications in electronics, including 2D hBN based substrates, gate dielectrics for graphene transistors and interconnects, and electronic packaging insulators. This paper reviews the synthesis, transfer and fabrication of 2D hBN films, hBN based composites and hBN-based van der Waals heterostructures. In particular, this review focuses on applications in manufacturing electronic devices where the insulating and thermal properties of hBN can potentially be exploited. 2D hBN and related composite systems are emerging as new and industrially important materials, which could address many challenges in future complex electronics devices and systems. [Figure not available: see fulltext.

  8. Preparation and thermal properties of polyacrylonitrile/hexagonal boron nitride composites

    Energy Technology Data Exchange (ETDEWEB)

    Madakbas, Seyfullah, E-mail: smadakbas@marmara.edu.tr [Marmara University, Department of Chemistry, 34722 Istanbul (Turkey); Cakmakc Latin-Small-Letter-Dotless-I , Emrah; Kahraman, Memet Vezir [Marmara University, Department of Chemistry, 34722 Istanbul (Turkey)

    2013-01-20

    Highlights: Black-Right-Pointing-Pointer PAN/h-BN composites with improved thermal stability were prepared. Black-Right-Pointing-Pointer Thermal properties of composites were analysed by TGA and DSC. Black-Right-Pointing-Pointer Flame retardancy of the composites increased up to 27%. - Abstract: Polyacrylonitrile is a thermoplastic polymer with unique properties and it has several uses. However its flammability is a major drawback for certain applications. In this study it was aimed to prepare polyacrylonitrile (PAN)/hexagonal boron nitride (h-BN) composites with improved flame retardancy and thermal stability. Chemical structures of the composites were characterized by FTIR analysis. Thermal properties of these novel composites were analysed by TGA and DSC measurements. Glass transition temperatures and char yields increased with increasing h-BN percentage. Flame retardancy of the PAN composite materials improved with the addition of h-BN and the LOI value reached to 27% from 18%. Furthermore, the surface morphology of the composites was investigated by SEM analysis.

  9. Suppressing bacterial interaction with copper surfaces through graphene and hexagonal-boron nitride coatings.

    Science.gov (United States)

    Parra, Carolina; Montero-Silva, Francisco; Henríquez, Ricardo; Flores, Marcos; Garín, Carolina; Ramírez, Cristian; Moreno, Macarena; Correa, Jonathan; Seeger, Michael; Häberle, Patricio

    2015-04-01

    Understanding biological interaction with graphene and hexagonal-boron nitride (h-BN) membranes has become essential for the incorporation of these unique materials in contact with living organisms. Previous reports show contradictions regarding the bacterial interaction with graphene sheets on metals. Here, we present a comprehensive study of the interaction of bacteria with copper substrates coated with single-layer graphene and h-BN. Our results demonstrate that such graphitic coatings substantially suppress interaction between bacteria and underlying Cu substrates, acting as an effective barrier to prevent physical contact. Bacteria do not "feel" the strong antibacterial effect of Cu, and the substrate does not suffer biocorrosion due to bacteria contact. Effectiveness of these systems as barriers can be understood in terms of graphene and h-BN impermeability to transfer Cu(2+) ions, even when graphene and h-BN domain boundary defects are present. Our results seem to indicate that as-grown graphene and h-BN films could successfully protect metals, preventing their corrosion in biological and medical applications.

  10. Thermal contact resistance across a linear heterojunction within a hybrid graphene/hexagonal boron nitride sheet.

    Science.gov (United States)

    Hong, Yang; Zhang, Jingchao; Zeng, Xiao Cheng

    2016-09-21

    Interfacial thermal conductance plays a vital role in defining the thermal properties of nanostructured materials in which heat transfer is predominantly phonon mediated. In this work, the thermal contact resistance (R) of a linear heterojunction within a hybrid graphene/hexagonal boron nitride (h-BN) sheet is characterized using non-equilibrium molecular dynamics (NEMD) simulations. The effects of system dimension, heat flux direction, temperature and tensile strain on the predicted R values are investigated. The spatiotemporal evolution of thermal energies from the graphene to the h-BN sheet reveals that the main energy carrier in graphene is the flexural phonon (ZA) mode, which also has the most energy transmissions across the interface. The calculated R decreases monotonically from 5.2 × 10(-10) to 2.2 × 10(-10) K m(2) W(-1) with system lengths ranging from 20 to 100 nm. For a 40 nm length hybrid system, the calculated R decreases by 42% from 4.1 × 10(-10) to 2.4 × 10(-10) K m(2) W(-1) when the system temperature increases from 200 K to 600 K. The study of the strain effect shows that the thermal contact resistance R between h-BN and graphene sheets increases with the tensile strain. Detailed phonon density of states (PDOS) is computed to understand the thermal resistance results. PMID:27531348

  11. Local charge states in hexagonal boron nitride with Stone-Wales defects.

    Science.gov (United States)

    Wang, Rui; Yang, Jiali; Wu, Xiaozhi; Wang, Shaofeng

    2016-04-14

    A Stone-Wales (SW) defect is the simplest topological defect in graphene-like materials and can be potentially employed to design electronic devices . In this paper, we have systematically investigated the formation, structural, and electronic properties of the neutral and charged SW defects in hexagonal boron nitride (BN) using first-principles calculations. The transition states and energy barrier for the formation of SW defects demonstrate that the defected BN is stable. Our calculations show that there are two in-gap defect levels, which originate from the asymmetrical pentagon-heptagon pairs. The local defect configurations and electronic properties are sensitive to their charge states induced by the defect levels. The electronic band structures show that the negative and positive charged defects are mainly determined by shifting the conduction band minimum (CBM) and valence band maximum (VBM) respectively, and the SW-defected BN can realize -1 and +1 spin-polarized charge states. The effects of carbon (C) substitution on neutral and charged SW-defected BN have also been studied. Our results indicate that the C substitution of B in BN is in favour of the formation of SW defects. Structural and electronic calculations show rich charge-dependent properties of C substitutions in SW-defected BN, thus our theoretical study is important for various applications in the design of BN nanostructure-based devices. PMID:27030259

  12. Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

    International Nuclear Information System (INIS)

    Hexagonal boron nitride (h-BN) is highly promising for solid-state thermal neutron detector applications due to its many outstanding physical properties, especially its very large thermal neutron capture cross-section (~3840 barns for 10B), which is several orders of magnitude larger than those of most other isotopes. The focus of the present work is to carry out studies on h-BN thin film and detector properties to lay the foundation for the development of a direct-conversion solid-state thermal neutron detector with high sensitivity. The measured carrier mobility-lifetime (μτ) product of h-BN thin films grown on sapphire substrates is 2.83×10−7 cm2/V for electrons and holes, which is comparable to the value of about 10−7 cm2/V for GaN thin films grown on sapphire. Detectors based on h-BN thin films were fabricated and the nuclear reaction product pulse height spectra were measured. Under a bias of 20 V, very narrow individual peaks corresponding to the reaction product energies of α and Li particles as well as the sum peaks have been clearly resolved in the pulse height spectrum for the first time by a B-based direct-conversion semiconductor neutron detector. Our results indicate that h-BN thin film detectors possess unique advantages including small size, low weight, portability, low voltage operation and high energy resolution of specific reaction products

  13. Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products

    Science.gov (United States)

    Doan, T. C.; Majety, S.; Grenadier, S.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2015-05-01

    Hexagonal boron nitride (h-BN) is highly promising for solid-state thermal neutron detector applications due to its many outstanding physical properties, especially its very large thermal neutron capture cross-section (~3840 barns for 10B), which is several orders of magnitude larger than those of most other isotopes. The focus of the present work is to carry out studies on h-BN thin film and detector properties to lay the foundation for the development of a direct-conversion solid-state thermal neutron detector with high sensitivity. The measured carrier mobility-lifetime (μτ) product of h-BN thin films grown on sapphire substrates is 2.83×10-7 cm2/V for electrons and holes, which is comparable to the value of about 10-7 cm2/V for GaN thin films grown on sapphire. Detectors based on h-BN thin films were fabricated and the nuclear reaction product pulse height spectra were measured. Under a bias of 20 V, very narrow individual peaks corresponding to the reaction product energies of α and Li particles as well as the sum peaks have been clearly resolved in the pulse height spectrum for the first time by a B-based direct-conversion semiconductor neutron detector. Our results indicate that h-BN thin film detectors possess unique advantages including small size, low weight, portability, low voltage operation and high energy resolution of specific reaction products.

  14. Tuning dissociation using isoelectronically doped graphene and hexagonal boron nitride: Water and other small molecules

    Science.gov (United States)

    Al-Hamdani, Yasmine S.; Alfè, Dario; von Lilienfeld, O. Anatole; Michaelides, Angelos

    2016-04-01

    Novel uses for 2-dimensional materials like graphene and hexagonal boron nitride (h-BN) are being frequently discovered especially for membrane and catalysis applications. Still however, a great deal remains to be understood about the interaction of environmentally and industrially relevant molecules such as water with these materials. Taking inspiration from advances in hybridising graphene and h-BN, we explore using density functional theory, the dissociation of water, hydrogen, methane, and methanol on graphene, h-BN, and their isoelectronic doped counterparts: BN doped graphene and C doped h-BN. We find that doped surfaces are considerably more reactive than their pristine counterparts and by comparing the reactivity of several small molecules, we develop a general framework for dissociative adsorption. From this a particularly attractive consequence of isoelectronic doping emerges: substrates can be doped to enhance their reactivity specifically towards either polar or non-polar adsorbates. As such, these substrates are potentially viable candidates for selective catalysts and membranes, with the implication that a range of tuneable materials can be designed.

  15. Antenna-coupled photon emission from hexagonal boron nitride tunnel junctions

    Science.gov (United States)

    Parzefall, M.; Bharadwaj, P.; Jain, A.; Taniguchi, T.; Watanabe, K.; Novotny, L.

    2015-12-01

    The ultrafast conversion of electrical signals to optical signals at the nanoscale is of fundamental interest for data processing, telecommunication and optical interconnects. However, the modulation bandwidths of semiconductor light-emitting diodes are limited by the spontaneous recombination rate of electron-hole pairs, and the footprint of electrically driven ultrafast lasers is too large for practical on-chip integration. A metal-insulator-metal tunnel junction approaches the ultimate size limit of electronic devices and its operating speed is fundamentally limited only by the tunnelling time. Here, we study the conversion of electrons (localized in vertical gold-hexagonal boron nitride-gold tunnel junctions) to free-space photons, mediated by resonant slot antennas. Optical antennas efficiently bridge the size mismatch between nanoscale volumes and far-field radiation and strongly enhance the electron-photon conversion efficiency. We achieve polarized, directional and resonantly enhanced light emission from inelastic electron tunnelling and establish a novel platform for studying the interaction of electrons with strongly localized electromagnetic fields.

  16. Ion beam modification of the structure and properties of hexagonal boron nitride: An infrared and X-ray diffraction study

    Science.gov (United States)

    Aradi, E.; Naidoo, S. R.; Billing, D. G.; Wamwangi, D.; Motochi, I.; Derry, T. E.

    2014-07-01

    The vibrational mode for the cubic symmetry of boron nitride (BN) has been produced by boron ion implantation of hexagonal boron nitride (h-BN). The optimum fluence at 150 keV was found to be 5 × 1014 ions/cm2. The presence of the c-BN phase was inferred using glancing incidence XRD (GIXRD) and Fourier Transform Infrared Spectroscopy (FTIR). After implantation, Fourier Transform Infrared Spectroscopy indicated a peak at 1092 cm-1 which corresponds to the vibrational mode for nanocrystalline BN (nc-BN). The glancing angle XRD pattern after implantation exhibited c-BN diffraction peaks relative to the implantation depth of 0.4 μm.

  17. Large scale graphene/hexagonal boron nitride heterostructure for tunable plasmonics

    KAUST Repository

    Zhang, Kai

    2013-09-01

    Vertical integration of hexagonal boron nitride (h-BN) and graphene for the fabrication of vertical field-effect transistors or tunneling diodes has stimulated intense interest recently due to the enhanced performance offered by combining an ultrathin dielectric with a semi-metallic system. Wafer scale fabrication and processing of these heterostructures is needed to make large scale integrated circuitry. In this work, by using remote discharged, radio-frequency plasma chemical vapor deposition, wafer scale, high quality few layer h-BN films are successfully grown. By using few layer h-BN films as top gate dielectric material, the plasmon energy of graphene can be tuned by electrostatic doping. An array of graphene/h-BN vertically stacked micrometer-sized disks is fabricated by lithography and transfer techniques, and infrared spectroscopy is used to observe the modes of tunable graphene plasmonic absorption as a function of the repeating (G/h-BN)n units in the vertical stack. Interestingly, the plasmonic resonances can be tuned to higher frequencies with increasing layer thickness of the disks, showing that such vertical stacking provides a viable strategy to provide wide window tuning of the plasmons beyond the limitation of the monolayer. An array of graphene/h-BN vertically stacked micrometer-sized disks is fabricated by lithography and transfer techniques, and infrared spectroscopy is used to observe the modes of tunable graphene plasmonic absorption as a function of the repeating (G/h-BN)n units in the vertical stack. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Thermal Conductance at the 2D MoS2-hexagonal Boron Nitride Interface

    Science.gov (United States)

    Liu, Yi; Hippalgaonkar, Kedar; Ong, Zhun Yong; Thong, John Tl; Qiu, Chengwei

    In recent years, a number of 2D heterostructure devices have emerged, including graphene/hexagonal boron nitride (h-BN), graphene/MoS2 and MoS2/ h-BN. Among them, MoS2/ h-BN field-effect transistors with MoS2 channels and h-BN dielectric have been reported to have higher carrier mobility and reduced hysteresis compared to MoS2 on SiO2. Despite relatively high in-plane thermal conductivity of MoS2 and h-BN, heat dissipation from these 2D devices is mainly limited by heat transfer in the vertical direction. Consequently, their operating temperatures are strongly influenced by the interface thermal conductance. In this work, we demonstrate the measurement of interface thermal conductance between MoS2 and h-BN. This is realized by electrically heating MoS2 and monitoring their temperatures through Raman spectroscopy. The obtained interface thermal conductance between MoS2 and h-BN is 1.77 MW/m2K, smaller than the reported value for the graphene/ h-BN interface, due to the weak coupling of phonon modes between MoS2 and h-BN based on our NEGF calculation. The low interface thermal conductance value suggests this interface is not favorable for heat dissipation, and should be considered carefully for the design of electronic and optoelectronic devices based on MoS2/ h-BN heterostructures.

  19. Hexagonal boron nitride: Ubiquitous layered dielectric for two-dimensional electronics

    Science.gov (United States)

    Jain, Nikhil

    Hexagonal boron nitride (h-BN), a layer-structured dielectric with very similar crystalline lattice to that of graphene, has been studied as a ubiquitous dielectric for two-dimensional electronics. While 2D materials may lead to future platform for electronics, traditional thin-film dielectrics (e.g., various oxides) make highly invasive interface with graphene. Multiple key roles of h-BN in graphene electronics are explored in this thesis. 2D graphene/h-BN heterostructures are designed and implemented in diverse configurations in which h-BN is evaluated as a supporting substrate, a gate dielectric, a passivation layer, or an interposing barrier in "3D graphene" superlattice. First, CVD-grown graphene on h-BN substrate shows improved conductivity and resilience to thermally induced breakdown, as compared with graphene on SiO2, potentially useful for high-speed graphene devices and on-chip interconnects. h-BN is also explored as a gate dielectric for graphene field-effect transistor with 2D heterostructure design. The dielectric strength and tunneling behavior of h-BN are investigated, confirming its robust nature. Next, h-BN is studied as a passivation layer for graphene electronics. In addition to significant improvement in current density and breakdown threshold, fully encapsulated graphene exhibits minimal environmental sensitivity, a key benefit to 2D materials which have only surfaces. Lastly, reduction in interlayer carrier scattering is observed in a double-layered graphene setup with ultrathin h-BN multilayer as an interposing layer. The DFT simulation and Raman spectral analysis indicate reduction in interlayer scattering. The decoupling of the two graphene monolayers is further confirmed by electrical characterization, as compared with other referencing mono- and multilayer configurations. The heterostructure serves as the building element in "3D graphene", a versatile platform for future electronics.

  20. Raman studies on the effect of multiple-energy ion implantation on single-crystal hexagonal boron nitride

    Science.gov (United States)

    Aradi, E.; Naidoo, S. R.; Erasmus, R. M.; Julies, B.; Derry, T. E.

    2015-03-01

    Single energy ion implantation of hexagonal boron nitride (h-BN) at various fluences and keV energies has shown that there is a change in the local symmetry of the crystal from hexagonal to the cubic (c-BN) symmetry. These conclusions have been primarily based on Raman scattering (RS) and Fourier transform infrared spectroscopy. Transmission electron microscopy (TEM) analyses have been a challenge because the sample preparation for cross-sectional study of both the polycrystalline substrates and single-crystal material used in the study presented problems that were difficult to circumvent. A multiple-energy implant with different fluence fractions has been used to create a uniform implanted layer in the material from the surface to the end of range of the implant in this study. We report on the initial RS studies on these samples.

  1. CO oxidation catalyzed by the single Co atom embedded hexagonal boron nitride nanosheet: a DFT-D study.

    Science.gov (United States)

    Lu, Zhansheng; Lv, Peng; Liang, Yanli; Ma, Dongwei; Zhang, Yi; Zhang, Wenjin; Yang, Xinwei; Yang, Zongxian

    2016-08-21

    A single metal atom stabilized on two dimensional materials (such as graphene and h-BN) exhibits extraordinary activity in the oxidation of CO. The oxidation of CO by molecular O2 on a single cobalt atom embedded in a hexagonal boron nitride monolayer (h-BN) is investigated using first-principles calculations with dispersion-correction. It is found that the single Co atom prefers to reside in a boron vacancy and possesses great stability. There are three mechanisms for CO oxidation: the traditional Eley-Rideal (ER) and Langmuir-Hinshelwood (LH) mechanisms and the termolecular Eley-Rideal (TER) mechanism proposed recently. Given the relatively small reaction barriers of the rate-limiting steps for the ER, LH and TER mechanisms (0.59, 0.55 and 0.41 eV, respectively), all three mechanisms are able to occur at low temperature. The current study may provide useful clues to develop low cost single atom catalysts.

  2. A two-dimensional photonic crystal with six large bandgaps formed by a hexagonal lattice of anisotropic cylinders

    Institute of Scientific and Technical Information of China (English)

    庄飞; 吴良; 何赛灵

    2002-01-01

    The plane-wave expansion method is used to calculate the band structure of a two-dimensional photonic crystalformed by a hexagonal structure of anisotropic cylinders. Two cylindrical inclusions in the unit cell have two differentradii, R1 and R2 (Ri<R2). By reducing the symmetry of the structure and choosing appropriately parameters R2and s = R1/R2 (s<1), we obtain six large complete bandgaps, among which three are over 0.05 ωe (where ωe = 2πc/a)in the high region of the normalized frequency (however, one of these over 0.065 ωe is not stable). There are two otherstable complete bandgaps in the low-frequency region.

  3. A two—dimensional photonic crystal with six large bandgaps formed by a hexagonal lattice of anisotropic cylinders

    Institute of Scientific and Technical Information of China (English)

    庄飞; 吴良; 等

    2002-01-01

    The plane-wave expansion method is used to calculate the band structure of a two-dimensional photonic crystal formed by a hexagonal structure of anisotropic cylinders.Two cylindrical inclusions in the unit cell have two different radii,R1 and R2(R1

  4. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes

  5. Inversion of Spin Signal and Spin Filtering in Ferromagnet|Hexagonal Boron Nitride-Graphene van der Waals Heterostructures

    Science.gov (United States)

    Kamalakar, M. Venkata; Dankert, André; Kelly, Paul J.; Dash, Saroj P.

    2016-02-01

    Two dimensional atomically thin crystals of graphene and its insulating isomorph hexagonal boron nitride (h-BN) are promising materials for spintronic applications. While graphene is an ideal medium for long distance spin transport, h-BN is an insulating tunnel barrier that has potential for efficient spin polarized tunneling from ferromagnets. Here, we demonstrate the spin filtering effect in cobalt|few layer h-BN|graphene junctions leading to a large negative spin polarization in graphene at room temperature. Through nonlocal pure spin transport and Hanle precession measurements performed on devices with different interface barrier conditions, we associate the negative spin polarization with high resistance few layer h-BN|ferromagnet contacts. Detailed bias and gate dependent measurements reinforce the robustness of the effect in our devices. These spintronic effects in two-dimensional van der Waals heterostructures hold promise for future spin based logic and memory applications.

  6. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zuo, Zheng; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States)

    2015-11-23

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.

  7. Synthesis and radiation response of BCON: a graphene oxide and hexagonal boron nitride hybrid

    Science.gov (United States)

    Bhimanapati, Ganesh R.; Wetherington, Maxwell; Mahabir, Shawn; Robinson, Joshua A.

    2016-06-01

    Since graphene, there has been a focus on several two-dimensional material systems (e.g. boron nitride, borocarbon nitride (BCN), transition-metal dichalcogenides) that provide an even wider array of unique chemistries and properties to explore future applications. Specifically, tailoring graphene/boron nitride heterostructures—which can theoretically retain the character of a single-atom thick sheet, withstand large physical strains, are easily functionalized, and have entirely different optical and mechanical properties compared to graphene—can provide the foundation for entirely new research avenues. In recent years, it has been shown that because of the similar crystal structure, carbon, boron, and nitrogen can co-exist as atomic sheets in a layered structure. We have developed a facile method of integrating boron nitride (hBN) and graphene oxide (GO) via chemical exfoliation which we refer to as BCON. The study of the stability of this material at different pH conditions indicates a stable and a uniform solution is achievable at pH 4–8. X-Ray Photoelectron Spectroscopy helped to identify the new bonds which indicated the formation of BCON linkage. Further, an in situ XPS technique was used to understand the chemical changes while exposing it to ionization radiation specially focusing on the C/O ratio. It was observed that even with a very low energy source, this material is highly sensitive to ionizing radiation, such as neutron, alpha and beta particles.

  8. Copper atoms embedded in hexagonal boron nitride as potential catalysts for CO oxidation: A first-principles investigation

    KAUST Repository

    Liu, Xin

    2014-01-01

    We addressed the electronic structure of Cu atoms embedded in hexagonal boron nitride (h-BN) and their catalytic role in CO oxidation by first-principles-based calculations. We showed that Cu atoms prefer to bind directly with the localized defects on h-BN, which act as strong trapping sites for Cu atoms and inhibit their clustering. The strong binding of Cu atoms at boron vacancy also up-shifts the energy level of Cu-d states to the Fermi level and promotes the formation of peroxide-like intermediate. CO oxidation over Cu atoms embedded in h-BN would proceed through the Langmuir-Hinshelwood mechanism with the formation of a peroxide-like complex by reaction of coadsorbed CO and O2, with the dissociation of which the a CO2 molecule and an adsorbed O atom are formed. Then, the embedded Cu atom is regenerated by the reaction of another gaseous CO with the remnant O atom. The calculated energy barriers for the formation and dissociation of peroxide complex and regeneration of embedded Cu atoms are as low as 0.26, 0.11 and 0.03 eV, respectively, indicating the potential high catalytic performance of Cu atoms embedded in h-BN for low temperature CO oxidation. © the Partner Organisations 2014.

  9. CO oxidation catalyzed by the single Co atom embedded hexagonal boron nitride nanosheet: a DFT-D study.

    Science.gov (United States)

    Lu, Zhansheng; Lv, Peng; Liang, Yanli; Ma, Dongwei; Zhang, Yi; Zhang, Wenjin; Yang, Xinwei; Yang, Zongxian

    2016-08-21

    A single metal atom stabilized on two dimensional materials (such as graphene and h-BN) exhibits extraordinary activity in the oxidation of CO. The oxidation of CO by molecular O2 on a single cobalt atom embedded in a hexagonal boron nitride monolayer (h-BN) is investigated using first-principles calculations with dispersion-correction. It is found that the single Co atom prefers to reside in a boron vacancy and possesses great stability. There are three mechanisms for CO oxidation: the traditional Eley-Rideal (ER) and Langmuir-Hinshelwood (LH) mechanisms and the termolecular Eley-Rideal (TER) mechanism proposed recently. Given the relatively small reaction barriers of the rate-limiting steps for the ER, LH and TER mechanisms (0.59, 0.55 and 0.41 eV, respectively), all three mechanisms are able to occur at low temperature. The current study may provide useful clues to develop low cost single atom catalysts. PMID:27436673

  10. Shear-induced phase transition of nanocrystalline hexagonal boron nitride to wurtzitic structure at room temperature and lower pressure.

    Science.gov (United States)

    Ji, Cheng; Levitas, Valery I; Zhu, Hongyang; Chaudhuri, Jharna; Marathe, Archis; Ma, Yanzhang

    2012-11-20

    Disordered structures of boron nitride (BN), graphite, boron carbide (BC), and boron carbon nitride (BCN) systems are considered important precursor materials for synthesis of superhard phases in these systems. However, phase transformation of such materials can be achieved only at extreme pressure-temperature conditions, which is irrelevant to industrial applications. Here, the phase transition from disordered nanocrystalline hexagonal (h)BN to superhard wurtzitic (w)BN was found at room temperature under a pressure of 6.7 GPa after applying large plastic shear in a rotational diamond anvil cell (RDAC) monitored by in situ synchrotron X-ray diffraction (XRD) measurements. However, under hydrostatic compression to 52.8 GPa, the same hBN sample did not transform to wBN but probably underwent a reversible transformation to a high-pressure disordered phase with closed-packed buckled layers. The current phase-transition pressure is the lowest among all reported direct-phase transitions from hBN to wBN at room temperature. Usually, large plastic straining leads to disordering and amorphization; here, in contrast, highly disordered hBN transformed to crystalline wBN. The mechanisms of strain-induced phase transformation and the reasons for such a low transformation pressure are discussed. Our results demonstrate a potential of low pressure-room temperature synthesis of superhard materials under plastic shear from disordered or amorphous precursors. They also open a pathway of phase transformation of nanocrystalline materials and materials with disordered and amorphous structures under extensive shear.

  11. Shear-induced phase transition of nanocrystalline hexagonal boron nitride to wurtzitic structure at room temperature and lower pressure

    Science.gov (United States)

    Ji, Cheng; Levitas, Valery I.; Zhu, Hongyang; Chaudhuri, Jharna; Marathe, Archis; Ma, Yanzhang

    2012-01-01

    Disordered structures of boron nitride (BN), graphite, boron carbide (BC), and boron carbon nitride (BCN) systems are considered important precursor materials for synthesis of superhard phases in these systems. However, phase transformation of such materials can be achieved only at extreme pressure–temperature conditions, which is irrelevant to industrial applications. Here, the phase transition from disordered nanocrystalline hexagonal (h)BN to superhard wurtzitic (w)BN was found at room temperature under a pressure of 6.7 GPa after applying large plastic shear in a rotational diamond anvil cell (RDAC) monitored by in situ synchrotron X-ray diffraction (XRD) measurements. However, under hydrostatic compression to 52.8 GPa, the same hBN sample did not transform to wBN but probably underwent a reversible transformation to a high-pressure disordered phase with closed-packed buckled layers. The current phase-transition pressure is the lowest among all reported direct-phase transitions from hBN to wBN at room temperature. Usually, large plastic straining leads to disordering and amorphization; here, in contrast, highly disordered hBN transformed to crystalline wBN. The mechanisms of strain-induced phase transformation and the reasons for such a low transformation pressure are discussed. Our results demonstrate a potential of low pressure–room temperature synthesis of superhard materials under plastic shear from disordered or amorphous precursors. They also open a pathway of phase transformation of nanocrystalline materials and materials with disordered and amorphous structures under extensive shear. PMID:23129624

  12. Generation and characterization of anisotropic microstructures in rare earth-iron-boron alloys

    Science.gov (United States)

    Oster, Nathaniel

    The automotive industry is currently being directed toward electrification of their fleets. In order to provide these hybrid or electric vehicles, lightweight high torque electric motors are needed. Permanent magnet (PM) brushless motors have been identified as the preferred motors for these applications. In order to effectively provide these motors, cost-effective high strength PMs are needed. The use of polymer bonded PMs is one method to reduce processing costs, but performance is decreased unless anisotropic PMs can be formed. New processing methods to form anisotropic mixed rare earth (MRE)-iron-boron PM particulate were studied in this work. Two primary processing routes were identified and investigated: controlled devitrification through application of uniaxial pressure and rapid directional solidification utilizing a segregating additive. In addition, further control of the melt-spinning process was achieved through control of wheel surface temperature and finish. Controlled devitrification was found to produce an anisotropic, nanocrystalline microstructure, as observed through TEM and XRD studies. A high defect density within the structure, unprecedented in RE2Fe14B microstructures, was observed. It is surmised that the defects cause soft magnetic behavior. Stabilization of a columnar, textured microstructure was achieved through the utilization of moderate wheel speeds during melt-spinning, in combination with minor additions of Ag to the alloy. The texture was seen to be altered from that typically seen in RE2Fe14B alloys melt-spun at low-to-moderate wheel speeds. It was observed that this occurs through a modification in the solidification pathway, catalyzed by the addition of Ag. In addition to the altered texture, the presence of fine precipitates within the matrix and varying interdendritic phases was observed. Alteration of wheel surface temperature and surface finish was seen to have significant effects on the ability to form amorphous material in

  13. In situ observations during chemical vapor deposition of hexagonal boron nitride on polycrystalline copper

    DEFF Research Database (Denmark)

    Kidambi, Piran R.; Blume, Raoul; Kling, Jens;

    2014-01-01

    isothermally, i.e., at constant elevated temperature, on the Cu surface during exposure to borazine. A Cu lattice expansion during borazine exposure and B precipitation from Cu upon cooling highlight that B is incorporated into the Cu bulk, i.e., that growth is not just surface-mediated. On this basis we...... processing, and that this negatively affects the stability of h-BN on the catalyst. For extended air exposure Cu oxidation is observed, and upon re-heating in vacuum an oxygen-mediated disintegration of the h-BN film via volatile boron oxides occurs. Importantly, this disintegration is catalyst mediated, i.e...

  14. Defective Hexagonal Boron Nitride Nanosheet on Ni(111) and Cu(111): Stability, Electronic Structures, and Potential Applications.

    Science.gov (United States)

    Gao, Xiaomei; Wang, Shujiao; Lin, Sen

    2016-09-14

    Defective hexagonal boron nitride nanosheets (h-BNNSs) supported by Ni(111) and Cu(111) surfaces have been systematically studied in this work by first-principles methods. The calculation results show that various defects play an important role in enhancing the stability of h-BNNS/metal heterostructure. Importantly, significant electron transfer through the interface between metal substrate and h-BNNS to the defect sites can make h-BNNS more catalytically active. Using the oxygen reduction reaction (ORR) as a probe, it is shown that the binding energies of O2*, OH*, OOH*, and O* on h-BNNS/Cu(111) with a boron vacancy (VB) are quite similar to those observed on the Pt(111) surface, suggesting inert h-BNNS materials with defects can be functionalized by metal surfaces to become catalytically active for the ORR process. On the other hand, the reaction mechanism of CO oxidation on Ni(111) and Cu(111) supported h-BNNS with VB is systematically investigated. The h-BN/Cu(111) catalyst with a VB precovered by a CO species exhibits catalytic capacity for CO oxidation with a lower energy barrier compared with that on h-BN/Cu(111) without any defect. While on Ni(111) supported h-BNNS with a N vacancy, the defect site turns to be dominated by O2 and the energy barrier is significantly increased, indicating its dependence on the type of defect. This work will provide information for designing h-BN-based catalysts in heterogeneous catalysis. PMID:27564007

  15. The origins of near band-edge transitions in hexagonal boron nitride epilayers

    Energy Technology Data Exchange (ETDEWEB)

    Du, X. Z.; Li, J.; Lin, J. Y.; Jiang, H. X., E-mail: hx.jiang@ttu.edu [Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409 (United States)

    2016-02-01

    Photoluminescence spectroscopy has been employed to probe the near band-edge transitions in hexagonal BN (h-BN) epilayers synthesized under varying ammonia flow rates. The results suggest that the quasi-donor-acceptor pair emission line at 5.3 eV is due to the transition between the nitrogen vacancy and a deep acceptor, whereas the 5.5 eV emission line is due to the recombination of an exciton bound to a deep acceptor formed by carbon impurity occupying the nitrogen site. By growing h-BN under high ammonia flow rates, nitrogen vacancy related peaks can be eliminated and epilayers exhibiting pure free exciton emission have been obtained.

  16. Alkylamine-functionalized hexagonal boron nitride nanoplatelets as a novel material for the reduction of friction and wear.

    Science.gov (United States)

    Kumari, Sangita; Sharma, Om P; Khatri, Om P

    2016-08-17

    Hexagonal boron nitride nanoplatelets (h-BNNPs), which are structurally analogous to graphene, were prepared via the ultrasound-assisted exfoliation of h-BN powder using N-methyl pyrrolidone as the solvent. The alkylamines with variable alkyl chains and electron-rich nitrogen atoms were grafted onto the boron sites of the h-BNNPs based on Lewis acid-base chemistry. The grafting of the alkylamines onto the h-BNNPs was confirmed using FTIR, XPS, TGA and (13)C SSNMR analyses. The crystalline and structural features of the alkylamine-functionalized h-BNNPs were studied using XRD and HRTEM analyses. The TGA and FTIR results revealed a higher grafting of octadecylamine (ODA) on the h-BNNPs compared to trioctylamine (TOA). The cohesive interaction between the alkyl chains grafted onto the h-BNNPs and the hydrocarbon chains of mineral lube base oil facilitates the dispersion of the alkylamine-functionalized h-BNNPs. The TOA-grafted h-BNNPs (h-BNNPs-TOA) exhibited long-term dispersion stability compared to the ODA-grafted h-BNNPs and this was attributed to a higher degree of van der Waals interactions between the octyl chains of the TOA molecules grafted onto the h-BNNPs and the hydrocarbon chains of the mineral lube base oil. The tribo-performance of the h-BNNPs-TOA as an additive to mineral lube base oil was evaluated in terms of the coefficient of friction and wear using ball-on-disc contact geometry. A minute dosing (0.02 mg mL(-1)) of h-BNNPs-TOA significantly improved the lubrication characteristics of the mineral lube base oil and showed a 35 and 25% reduction of friction and wear, respectively. The presence of boron and nitrogen on the worn scar of an aluminium disc, as deduced from elemental mapping, confirmed the formation of a tribo-chemical thin film of h-BN lamellae on the contact interfaces, which not only reduced the friction but also protected the contact interfaces against undesirable wear events. PMID:27484045

  17. A comparison of electronic transport properties of graphene with hexagonal boron nitride substrate and graphane, a first principle study

    Science.gov (United States)

    Pashangpour, Mansoureh; Bagheri, Zargham; Ghaffari, Vahid

    2013-06-01

    In this paper, a first-principle investigation of the electronic properties of graphene on hexagonal boron nitride substrate, and of one-sided and two-sided fully saturated hydrocarbons with C-H formula derived from a single sheet of graphene, tablelike and chairlike graphane, are presented within density functional theory (DFT). We obtain the most stable orientation of graphene on the substrate, the adsorption energy, the charge transfer and density of states (DOS) for these systems. We discuss the changes in the density of states as well as the extent of charge transfer, band gap and finally quantum conductivity and current for graphene due to the presence of the substrate and H atoms. We show that the band gap of 64 meV induced by the BN substrate can greatly improve the electrical characteristics of graphene-based field effect transistors (FETs) and its on/off ratio and decreases the minimum conductance by a factor three. We identify that the substrate is acting as a donor for graphene layer and graphene is acting as an acceptor with respect to H atoms after saturation with hydrogen. We show that graphene on h-BN substrate has higher on/off ratio respect to pristine graphene and higher conductance respect to tablelike graphane.

  18. Negative Refraction with Superior Transmission in Graphene-Hexagonal Boron Nitride (hBN) Multilayer Hyper Crystal

    Science.gov (United States)

    Sayem, Ayed Al; Rahman, Md. Masudur; Mahdy, M. R. C.; Jahangir, Ifat; Rahman, Md. Saifur

    2016-05-01

    In this article, we have theoretically investigated the performance of graphene-hexagonal Boron Nitride (hBN) multilayer structure (hyper crystal) to demonstrate all angle negative refraction along with superior transmission. hBN, one of the latest natural hyperbolic materials, can be a very strong contender to form a hyper crystal with graphene due to its excellence as a graphene-compatible substrate. Although bare hBN can exhibit negative refraction, the transmission is generally low due to its high reflectivity. Whereas due to graphene’s 2D nature and metallic characteristics in the frequency range where hBN behaves as a type-I hyperbolic material, we have found graphene-hBN hyper-crystals to exhibit all angle negative refraction with superior transmission. Interestingly, superior transmission from the whole structure can be fully controlled by the tunability of graphene without hampering the negative refraction originated mainly from hBN. We have also presented an effective medium description of the hyper crystal in the low-k limit and validated the proposed theory analytically and with full wave simulations. Along with the current extensive research on hybridization of graphene plasmon polaritons with (hyperbolic) hBN phonon polaritons, this work might have some substantial impact on this field of research and can be very useful in applications such as hyper-lensing.

  19. Torsional properties of hexagonal boron nitride nanotubes, carbon nanotubes and their hybrid structures: A molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, Qi-lin, E-mail: xiongql@hust.edu.cn [Department of Mechanics, Huazhong University of Science & Technology, 1037 Luoyu Road, Wuhan 430074 (China); Hubei Key Laboratory of Engineering Structural Analysis and Safety Assessment, Luoyu Road 1037, Wuhan 430074 (China); Tian, Xiao Geng [State Key Laboratory for Mechanical Structure Strength and Vibration, Xi’an Jiaotong University, Xi’an 710049 (China)

    2015-10-15

    The torsional mechanical properties of hexagonal single-walled boron nitride nanotubes (SWBNNTs), single-walled carbon nanotubes (SWCNTs), and their hybrid structures (SWBN-CNTs) are investigated using molecular dynamics (MD) simulation. Two approaches - force approach and energy approach, are adopted to calculate the shear moduli of SWBNNTs and SWCNTs, the discrepancy between two approaches is analyzed. The results show that the shear moduli of single-walled nanotubes (SWNTs), including SWBNNTs and SWCNTs are dependent on the diameter, especially for armchair SWNTs. The armchair SWNTs show the better ability of resistance the twisting comparable to the zigzag SWNTs. The effects of diameter and length on the critical values of torque of SWNTs are obtained by comparing the torsional behaviors of SWNTs with different diameters and different lengths. It is observed that the MD results of the effect of diameter and length on the critical values of torque agrees well with the prediction of continuum shell model. The shear modulus of SWBN-CNT has a significant dependence on the percentages of SWCNT and the hybrid style has also an influence on shear modulus. The critical values of torque of SWBN-CNTs increase with the increase of the percentages of SWCNT. This phenomenon can be interpreted by the function relationship between the torque of different bonds (B-N-X, C-C-X, C-B-X, C-N-X) and the angles of bonds.

  20. Alkyl-chain-grafted hexagonal boron nitride nanoplatelets as oil-dispersible additives for friction and wear reduction.

    Science.gov (United States)

    Kumari, Sangita; Sharma, Om P; Gusain, Rashi; Mungse, Harshal P; Kukrety, Aruna; Kumar, Niranjan; Sugimura, Hiroyuki; Khatri, Om P

    2015-02-18

    Hexagonal boron nitride (h-BN), an isoelectric analogous to graphene multilayer, can easily shear at the contact interfaces and exhibits excellent mechanical strength, higher thermal stability, and resistance toward oxidation, which makes it a promising material for potential lubricant applications. However, the poor dispersibility of h-BN in lube base oil has been a major obstacle. Herein, h-BN powder was exfoliated into h-BN nanoplatelets (h-BNNPs), and then long alkyl chains were chemically grafted, targeting the basal plane defect and edge sites of h-BNNPs. The chemical and structural features of octadecyltriethoxysilane-functionalized h-BNNPs (h-BNNPs-ODTES) were studied by FTIR, XPS, XRD, HRTEM, and TGA analyses. The h-BNNPs-ODTES exhibit long-term dispersion stability in synthetic polyol ester lube base oil because of van der Waals interaction between the octadecyl chains of h-BNNPs-ODTES and alkyl functionalities of polyol ester. Micro- and macrotribology results showed that h-BNNPs-ODTES, as an additive to synthetic polyol ester, significantly reduced both the friction and wear of steel disks. Elemental mapping of the worn area explicitly demonstrates the transfer of h-BNNPs-ODTES on the contact interfaces. Furthermore, insight into the lubrication mechanism for reduction in both friction and wear is deduced based on the experimental results. PMID:25625695

  1. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Zheng, Jian-Guo; Liu, Jianlin

    2016-07-01

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5-6 nm)/G (26-27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ˜2.5-3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  2. Integration of hexagonal boron nitride with quasi-freestanding epitaxial graphene: toward wafer-scale, high-performance devices.

    Science.gov (United States)

    Bresnehan, Michael S; Hollander, Matthew J; Wetherington, Maxwell; LaBella, Michael; Trumbull, Kathleen A; Cavalero, Randal; Snyder, David W; Robinson, Joshua A

    2012-06-26

    Hexagonal boron nitride (h-BN) is a promising dielectric material for graphene-based electronic devices. Here we investigate the potential of h-BN gate dielectrics, grown by chemical vapor deposition (CVD), for integration with quasi-freestanding epitaxial graphene (QFEG). We discuss the large scale growth of h-BN on copper foil via a catalytic thermal CVD process and the subsequent transfer of h-BN to a 75 mm QFEG wafer. X-ray photoelectron spectroscopy (XPS) measurements confirm the absence of h-BN/graphitic domains and indicate that the film is chemically stable throughout the transfer process, while Raman spectroscopy indicates a 42% relaxation of compressive stress following removal of the copper substrate and subsequent transfer of h-BN to QFEG. Despite stress-induced wrinkling observed in the films, Hall effect measurements show little degradation (Graphene transistors utilizing h-BN gates exhibit peak intrinsic cutoff frequencies >30 GHz (2.4× that of HfO(2)-based devices). PMID:22545808

  3. Modulation of the band structure in bilayer zigzag graphene nanoribbons on hexagonal boron nitride using the force and electric fields

    Energy Technology Data Exchange (ETDEWEB)

    Ilyasov, V.V., E-mail: viily@mail.ru [Don State Technical University, Rostov on Don, 344000 (Russian Federation); Nguyen, Chuong V., E-mail: chuongnguyen11@gmail.com [Don State Technical University, Rostov on Don, 344000 (Russian Federation); Ershov, I.V. [Don State Technical University, Rostov on Don, 344000 (Russian Federation); Nguyen, Chien D. [Institute of Engineering Physics, Hanoi University of Science and Technology, Hanoi, 10000 (Viet Nam); Hieu, Nguyen N. [Institute of Research and Development, Duy Tan University, Da Nang (Viet Nam)

    2015-03-15

    Modulation of semiconductor–halfmetal–metal transition in the antiferromagnetic (AF) ordering of bilayer zigzag graphene nanoribbons (BZGNRs) on hexagonal boron nitride (h-BN) heterostructure using the external force field F{sub ext} and transverse electric fields E{sub ext} (in the presence of interaction with the substrate) was performed within the framework of the density functional theory (DFT). We established critical values of E{sub ext} and interlayer distance in the bilayer providing for semiconductor–halfmetal–metal transition in one of electron spin configurations. Our calculations also show that the energy gap E{sub g} in the AF-BZGNR/h-BN(0001) heterostructure can be controlled in a wide range of the F{sub ext} and E{sub ext}. This makes the AF-8-ZGNR/h-BN(0001) heterostructure being potentially promising for application in spintronic devices. - Highlights: • We used DFT to examine the opportunities for modulation of the band structure in AF-8-BZGNR/h-BN(0001). • We estimated the critical values of the F{sub ext} and E{sub ext} providing for SC-HM-M transition. • The energy gap in the AF-BZGNR/h-BN(0001) can be monitored in a wide range of the F{sub ext} and E{sub ext}.

  4. Fluorinated graphene and hexagonal boron nitride as ALD seed layers for graphene-based van der Waals heterostructures

    International Nuclear Information System (INIS)

    Ultrathin dielectric materials prepared by atomic-layer-deposition (ALD) technology are commonly used in graphene electronics. Using the first-principles density functional theory calculations with van der Waals (vdW) interactions included, we demonstrate that single-side fluorinated graphene (SFG) and hexagonal boron nitride (h-BN) exhibit large physical adsorption energy and strong electrostatic interactions with H2O-based ALD precursors, indicating their potential as the ALD seed layer for dielectric growth on graphene. In graphene-SFG vdW heterostructures, graphene is n-doped after ALD precursor adsorption on the SFG surface caused by vertical intrinsic polarization of SFG. However, graphene-h-BN vdW heterostructures help preserving the intrinsic characteristics of the underlying graphene due to in-plane intrinsic polarization of h-BN. By choosing SFG or BN as the ALD seed layer on the basis of actual device design needs, the graphene vdW heterostructures may find applications in low-dimensional electronics. (paper)

  5. van der Waals epitaxy of monolayer hexagonal boron nitride on copper foil: growth, crystallography and electronic band structure

    Science.gov (United States)

    Wood, Grace E.; Marsden, Alexander J.; Mudd, James J.; Walker, Marc; Asensio, Maria; Avila, Jose; Chen, Kai; Bell, Gavin R.; Wilson, Neil R.

    2015-06-01

    We investigate the growth of hexagonal boron nitride (h-BN) on copper foil by low pressure chemical vapour deposition (LP-CVD). At low pressure, h-BN growth proceeds through the nucleation and growth of triangular islands. Comparison between the orientation of the islands and the local crystallographic orientation of the polycrystalline copper foil reveals an epitaxial relation between the copper and h-BN, even on Cu(100) and Cu(110) regions whose symmetry is not matched to the h-BN. However, the growth rate is faster and the islands more uniformly oriented on Cu(111) grains. Angle resolved photoemission spectroscopy measurements reveal a well-defined band structure for the h-BN, consistent with a band gap of 6 eV, that is decoupled from the copper surface beneath. These results indicate that, despite a weak interaction between h-BN and copper, van der Waals epitaxy defines the long range ordering of h-BN even on polycrystalline copper foils and suggest that large area, single crystal, monolayer h-BN could be readily and cheaply produced.

  6. Torsional properties of hexagonal boron nitride nanotubes, carbon nanotubes and their hybrid structures: A molecular dynamics study

    Directory of Open Access Journals (Sweden)

    Qi-lin Xiong

    2015-10-01

    Full Text Available The torsional mechanical properties of hexagonal single-walled boron nitride nanotubes (SWBNNTs, single-walled carbon nanotubes (SWCNTs, and their hybrid structures (SWBN-CNTs are investigated using molecular dynamics (MD simulation. Two approaches - force approach and energy approach, are adopted to calculate the shear moduli of SWBNNTs and SWCNTs, the discrepancy between two approaches is analyzed. The results show that the shear moduli of single-walled nanotubes (SWNTs, including SWBNNTs and SWCNTs are dependent on the diameter, especially for armchair SWNTs. The armchair SWNTs show the better ability of resistance the twisting comparable to the zigzag SWNTs. The effects of diameter and length on the critical values of torque of SWNTs are obtained by comparing the torsional behaviors of SWNTs with different diameters and different lengths. It is observed that the MD results of the effect of diameter and length on the critical values of torque agrees well with the prediction of continuum shell model. The shear modulus of SWBN-CNT has a significant dependence on the percentages of SWCNT and the hybrid style has also an influence on shear modulus. The critical values of torque of SWBN-CNTs increase with the increase of the percentages of SWCNT. This phenomenon can be interpreted by the function relationship between the torque of different bonds (B-N-X, C-C-X, C-B-X, C-N-X and the angles of bonds.

  7. Quasi-freestanding monolayer heterostructure of graphene and hexagonal boron nitride on Ir(111) with a chiral boundary

    CERN Document Server

    Liu, Mengxi; Chen, Pengcheng; Sun, Jingyu; Ma, Donglin; Gao, Teng; Gao, Yabo; Li, Qiucheng; Cheng, Zhihai; Qiu, Xiaohui; Fang, Ying; Zhang, Yanfeng; Liu, Zhongfan

    2014-01-01

    Monolayer lateral heterostructure of graphene and hexagonal boron nitride (h-BNC) has attracted a growing attention mainly due to its tunable band-gap character and unique physical properties at interface. Hereby, we reported the first-time synthesis of a nearly freestanding h-BNC hybrid on a weakly coupled substrate of Ir (111), where graphene and h-BN possessing different surface heights and corrugations formed a perfect monolayer hybrid. With the aid of scanning tunneling microscopy/spectroscopy (STM/STS), we demonstrated that h-BN can patch alongside the boundary of pre-deposited graphene domains and vice versa to form a seamless monolayer hybrid, with the realization of predominant zigzag type chiral boundaries at the interface. Density-functional theory calculations and STM/STS measurements aided us to reveal that this interface between graphene and h-BN were atomically sharp in aspects of the chemical bonding as well as the local electronic property from both theoretical and experimental points of view...

  8. Hexagonal boron nitride nanosheets as adsorbents for solid-phase extraction of polychlorinated biphenyls from water samples.

    Science.gov (United States)

    Jia, Shiliang; Wang, Zhenhua; Ding, Ning; Elaine Wong, Y-L; Chen, Xiangfeng; Qiu, Guangyu; Dominic Chan, T-W

    2016-09-14

    The adsorptive potential of hexagonal boron nitride nanosheets (h-BNNSs) for solid-phase extraction (SPE) of pollutants was investigated for the first time. Seven indicators of polychlorinated biphenyls (PCBs) were selected as target analytes. The adsorption of PCBs on the surface of the h-BNNSs in water was simulated by the density functional theory and molecular dynamics. The simulation results indicated that the PCBs are adsorbed on the surface by π-π, hydrophobic, and electrostatic interactions. The PCBs were extracted with an h-BNNS-packed SPE cartridge, and eluted by dichloromethane. Gas chromatography-tandem mass spectrometry working in the multiple reaction monitor mode was used for the sample quantification. The effect of extraction parameters, including the flow rate, pH value, breakthrough volume, and the ionic strength, were investigated. Under the optimal working conditions, the developed method showed low limits of detection (0.24-0.50 ng L(-1); signal-to-noise ratio = 3:1), low limits of quantification (0.79-1.56 ng L(-1); signal-to-noise ratio = 10:1), satisfactory linearity (r > 0.99) within the concentration range of 2-1000 ng L(-1), and good precision (relative standard deviation < 12%). The PCBs concentration in environmental water samples was determined by the developed method. This results demonstrate that h-BNNSs have high analytical potential in the enrichment of pollutants. PMID:27566347

  9. Stability and properties of the two-dimensional hexagonal boron nitride monolayer functionalized by hydroxyl (OH) radicals: a theoretical study.

    Science.gov (United States)

    Wang, Hong-mei; Liu, Yue-jie; Wang, Hong-xia; Zhao, Jing-xiang; Cai, Qing-hai; Wang, Xuan-zhang

    2013-12-01

    Motivated by the great advance in graphene hydroxide--a versatile material with various applications--we performed density functional theory (DFT) calculations to study the functionalization of the two-dimensional hexagonal boron nitride (h-BN) sheet with hydroxyl (OH) radicals, which has been achieved experimentally recently. Particular attention was paid to searching for the most favorable site(s) for the adsorbed OH radicals on a h-BN sheet and addressing the roles of OH radical coverage on the stability and properties of functionalized h-BN sheet. The results indicate that, for an individual OH radica, the most stable configuration is that it is adsorbed on the B site of the h-BN surface with an adsorption energy of -0.88 eV and a magnetic moment of 1.00 μ(B). Upon adsorption of more than one OH radical on a h-BN sheet, however, these adsorbates prefer to adsorb in pairs on the B and its nearest N atoms from both sides of h-BN sheet without magnetic moment. An energy diagram of the average adsorption energy of OH radicals on h-BN sheet as a function of its coverage indicates that when the OH radical coverage reaches to 60 %, the functionalized h-BN sheet is the most stable among all studied configurations. More importantly, this configuration exhibits good thermal and dynamical stability at room temperature. Owing to the introduction of certain impurity levels, the band gap of h-BN sheet gradually decreases with increasing OH coverage, thereby enhancing its electrical conductivity.

  10. Pt atoms stabilized on hexagonal boron nitride as efficient single-atom catalysts for CO oxidation: A first-principles investigation

    KAUST Repository

    Liu, Xin

    2015-01-01

    Taking CO oxidation as a probe, we investigated the electronic structure and reactivity of Pt atoms stabilized by vacancy defects on hexagonal boron nitride (h-BN) by first-principles-based calculations. As a joint effect of the high reactivity of both a single Pt atom and a boron vacancy defect (PtBV), the Pt-N interaction is -4.40 eV and is already strong enough to prohibit the diffusion and aggregation of the stabilized Pt atom. Facilitated by the upshifted Pt-d states originated from the Pt-N interaction, the barriers for CO oxidation through the Langmuir-Hinshelwood mechanism for formation and dissociation of peroxide-like intermediate and the regeneration are as low as 0.38, 0.10 and 0.04 eV, respectively, suggesting the superiority of PtBV as a catalyst for low temperature CO oxidation.

  11. A platform for large-scale graphene electronics--CVD growth of single-layer graphene on CVD-grown hexagonal boron nitride.

    Science.gov (United States)

    Wang, Min; Jang, Sung Kyu; Jang, Won-Jun; Kim, Minwoo; Park, Seong-Yong; Kim, Sang-Woo; Kahng, Se-Jong; Choi, Jae-Young; Ruoff, Rodney S; Song, Young Jae; Lee, Sungjoo

    2013-05-21

    Direct chemical vapor deposition (CVD) growth of single-layer graphene on CVD-grown hexagonal boron nitride (h-BN) film can suggest a large-scale and high-quality graphene/h-BN film hybrid structure with a defect-free interface. This sequentially grown graphene/h-BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h-BN film, and suggests a new promising template for graphene device fabrication. PMID:23576235

  12. Using nano hexagonal boron nitride particles and nano cubic silicon carbide particles to improve the thermal conductivity of electrically conductive adhesives

    Science.gov (United States)

    Cui, Hui-wang; Li, Dong-sheng; Fan, Qiong

    2013-01-01

    To satisfy the high electrical and thermal conductivity required for the continuous development of electronic products, nano hexagonal boron nitride (BN) particles and nano cubic silicon carbide (SiC) particles were added into electrically conductive adhesives (ECAs) to improve the thermal conductivity. BN and SiC had little negative effect on the electrical conductivity, but improved the thermal conductivity significantly. When their content was 1.5 wt. %, the thermal conductivity at 100°C, 150°C and 200°C was increased by 71% (100°C), 78% (150°C) and 70% (200°C), and 114% (100°C), 110% (150°C) and 98% (200°C) respectively for BN and SiC comparing with those of the ECAs with no thermal conductive fillers. This method is simple, easy to do, and can be used practically in electronic packaging.

  13. Boron

    Science.gov (United States)

    ... an eye wash. Boron was used as a food preservative between 1870 and 1920, and during World Wars ... chemical symbol), B (symbole chimique), Borate, Borate de Sodium, Borates, Bore, Boric Acid, Boric Anhydride, Boric Tartrate, ...

  14. Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage.

    Science.gov (United States)

    Lee, Gwan-Hyoung; Cui, Xu; Kim, Young Duck; Arefe, Ghidewon; Zhang, Xian; Lee, Chul-Ho; Ye, Fan; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Hone, James

    2015-07-28

    Emerging two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have been intensively studied because of their novel properties for advanced electronics and optoelectronics. However, 2D materials are by nature sensitive to environmental influences, such as temperature, humidity, adsorbates, and trapped charges in neighboring dielectrics. Therefore, it is crucial to develop device architectures that provide both high performance and long-term stability. Here we report high performance of dual-gated van der Waals (vdW) heterostructure devices in which MoS2 layers are fully encapsulated by hexagonal boron nitride (hBN) and contacts are formed using graphene. The hBN-encapsulation provides excellent protection from environmental factors, resulting in highly stable device performance, even at elevated temperatures. Our measurements also reveal high-quality electrical contacts and reduced hysteresis, leading to high two-terminal carrier mobility (33-151 cm(2) V(-1) s(-1)) and low subthreshold swing (80 mV/dec) at room temperature. Furthermore, adjustment of graphene Fermi level and use of dual gates enable us to separately control contact resistance and threshold voltage. This novel vdW heterostructure device opens up a new way toward fabrication of stable, high-performance devices based on 2D materials. PMID:26083310

  15. Theoretical Analysis of Thermal Transport in Graphene Supported on Hexagonal Boron Nitride: The Importance of Strong Adhesion Due to π -Bond Polarization

    Science.gov (United States)

    Pak, Alexander J.; Hwang, Gyeong S.

    2016-09-01

    One important attribute of graphene that makes it attractive for high-performance electronics is its inherently large thermal conductivity (κ ) for the purposes of thermal management. Using a combined density-functional theory and classical molecular-dynamics approach, we predict that the κ of graphene supported on hexagonal boron nitride (h -BN) can be as large as 90% of the κ of suspended graphene, in contrast to the significant suppression of κ (more than 70% reduction) on amorphous silica. Interestingly, we find that this enhanced thermal transport is largely attributed to increased lifetimes of the in-plane acoustic phonon modes, which is a notable contrast from the dominant contribution of out-of-plane acoustic modes in suspended graphene. This behavior is possible due to the charge polarization throughout graphene that induces strong interlayer adhesion between graphene and h -BN. These findings highlight the potential benefit of layered dielectric substrates such as h -BN for graphene-based thermal management, in addition to their electronic advantages. Furthermore, our study brings attention to the importance of understanding the interlayer interactions of graphene with layered dielectric materials which may offer an alternative technological platform for substrates in electronics.

  16. Ab initio study of the structural, elastic, vibrational and thermodynamic properties of the hexagonal boron nitride: Performance of LDA and GGA

    Energy Technology Data Exchange (ETDEWEB)

    Hamdi, Ilyes, E-mail: ilyeshamdi@yahoo.f [Department of Electronics, Electro-technics and Automatics, Institute of Applied Sciences and Technology, 2100 Gafsa (Tunisia); UPMI units of research, Faculty of Sciences at Gafsa, 2100 Gafsa (Tunisia); Meskini, Noureddine [Physics Department, Faculty of Sciences at Tunis, 2092 Tunis (Tunisia)

    2010-07-01

    A first principles quantum mechanical approach is used to investigate the structural, elastic, vibrational and thermodynamic properties of the hexagonal boron nitride (h-BN) in the framework of the pseudopotential plane wave density-functional perturbation theory for the two popular exchange-correlation functionals: local density approximation and the revised Perdew-Burke-Ernzerhof generalized gradient approximation [Y. Zhang, W. Yang, Phys. Rev. Lett, 80 (1998), 890]. The LDA calculations of the structural parameters are in good agreement with experimental results, whereas GGA largely overestimated them. The computed elastic constants are improved by performing the calculations at room temperature and using the experimental lattice parameters. A good agreement with the experimental data is obtained for the phonon frequencies using both functionals. The thermodynamic properties such as the thermal equation of state, the in-plane and out-of-plane thermal expansion coefficients (LTEC), the bulk modulus and the heat capacity are calculated at the experimental lattice parameters using the quasiharmonic approximation (+ an empirical anharmonic term) for the Helmholtz free energy. Anharmonic corrections are important at high temperature. A good agreement with the experimental data for the LTEC has been obtained with the GGA functional, especially for the out-of-plane LTEC. In contrast with recent experimental findings, our calculated bulk modulus decreases with temperature for both functionals. This (decreasing) behavior is in a good agreement with other experimental data. The constant pressure heat capacity calculated with LDA and GGA is in very good agreement with experimental results.

  17. Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

    Science.gov (United States)

    Meng, Jun Hua; Zhang, Xing Wang; Wang, Hao Lin; Ren, Xi Biao; Jin, Chuan Hong; Yin, Zhi Gang; Liu, Xin; Liu, Heng

    2015-09-01

    Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were obtained by using the continuous h-BN film as a substrate. Furthermore, the well-designed sub-bilayered h-BN substrates provide direct evidence that the monolayered h-BN on Cu exhibits higher catalytic activity than the bilayered h-BN on Cu. The growth method applied here may have great potential in the scalable preparation of large-area high-quality graphene/h-BN heterostructures.Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a great deal of attention in recent years due to their unique and complementary properties for use in a wide range of potential applications. However, it still remains a challenge to synthesize large-area high quality samples by a scalable growth method. In this work, we present the synthesis of both in-plane and stacked graphene/h-BN heterostructures on Cu foils by sequentially depositing h-BN via ion beam sputtering deposition (IBSD) and graphene with chemical vapor deposition (CVD). Due to a significant difference in the growth rate of graphene on h-BN and Cu, the in-plane graphene/h-BN heterostructures were rapidly formed on h-BN domain/Cu substrates. The large-area vertically stacked graphene/h-BN heterostructures were

  18. Phonon transport in single-layer Boron nanoribbons

    CERN Document Server

    Zhang, Zhongwei; Peng, Qing; Chen, Yuanping

    2016-01-01

    Inspired by the successful synthesis of several allotropes, boron sheets have been one of the hottest spot areas of focus in various fields. Here, we study phonon transport in three types of boron nanoribbons with zigzag and armchair edges by using a non-equilibrium Green's function combined with first principles methods. Diverse transport properties are found in the nanoribbons. At the room temperature, their highest thermal conductance can be comparable with that of graphene, while the lowest thermal conductance is less than half of graphene's. The three boron sheets exhibit different anisotropic transport characteristics. Two of these sheets have stronger phonon transport abilities along the zigzag edges than the armchair edges, while in the case of the third, the results are reversed. With the analysis of phonon dispersion, bonding charge density, and simplified models of atomic chains, the mechanisms of the diverse phonon properties are discussed. Because all boron allotropes consists of hexagonal and tr...

  19. Structural and electronic properties of multilayer graphene on monolayer hexagonal boron nitride/nickel (111) interface system: A van der Waals density functional study

    Science.gov (United States)

    Yelgel, Celal

    2016-02-01

    The structural and electronic properties of multilayer graphene adsorbed on monolayer hexagonal boron nitride (h-BN)/Ni(111) interface system are investigated using the density functional theory with a recently developed non-local van der Waals density functional (rvv10). The most energetically favourable configuration for a monolayer h-BN/Ni(111) interface is found to be N atom atop the Ni atoms and B atom in fcc site with the interlayer distance of 2.04 Å and adsorption energy of 302 meV/BN. Our results show that increasing graphene layers on a monolayer h-BN/Ni(111) interface leads to a weakening of the interfacial interaction between the monolayer h-BN and Ni(111) surface. The adsorption energy of graphene layers on the h-BN/Ni(111) interface is found to be in the range of the 50-120 meV/C atom as the vertical distance from h-BN to the bottommost graphene layers decreases. With the adsorption of a multilayer graphene on the monolayer h-BN/Ni(111) interface system, the band gap of 0.12 eV and 0.25 eV opening in monolayer graphene and bilayer graphene near the K point is found with an upward shifting of the Fermi level. However, a stacking-sensitive band gap is opened in trilayer graphene. We obtain the band gap of 0.35 eV close to the K point with forming a Mexican hat band structure for ABC-stacked trilayer graphene.

  20. Edge and substrate-induced bandgap in zigzag graphene nanoribbons on the hexagonal nitride boron 8-ZGNR/h-BN(0001

    Directory of Open Access Journals (Sweden)

    V. V. Ilyasov

    2013-09-01

    Full Text Available The results of DFT (GGA-PBEsol and DFT(PBE-D2 study of the band structure of zigzag graphene nanoribbons on hexagonal nitride boron 8-ZGNR/h-BN(0001 are presented, suitable as potential base for new materials for spintronics. It offers a study of regularities in the changes of the valence band electron structure and the induction of the energy gap in the series 8-ZGNR → 8-ZGNR/h-BN(0001 → graphene/h-BN(0001. The peculiarities of the spin state at the Fermi level, the roles of the edge effect and the effect of substrate in formation of the band gap in 8-ZGNR/h-BN(0001 system are discussed. Our calculations shown that vdW-correction plays an important role in the adsorption of GNR on h-BN and results in reduction of the interplanar distances in equilibrium systems ZGNRs/h-BN(0001. As a result of the structural changes we have obtained new values of the energy gap in the 8-ZGNR-AF and 8-ZGNR-AF/h-BN(0001 systems. The paper demonstrates appearance of 600 meV energy gap in the 8-ZGNR/h-BN(0001 interface. The contributions of nanoribbon edges and the substrate in formation of the gap have been differentiated for the first time. The estimations of local magnetic moments on carbon atoms are made. Shown that in case of ferromagnetic ordering substrate presense causes insignificant splitting of the bands. The splitting reached only (14-28 meV. Since the electronic states of a suspended GNR in point (k=π are degenerate near the Fermi level, we can assume that the above splitting in 8-ZGNR/h-BN(0001 is only determined by the contribution of the h-BN(0001 substrate.

  1. Manipulation of surface plasmon polariton propagation on isotropic and anisotropic two-dimensional materials coupled to boron nitride heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Inampudi, Sandeep; Nazari, Mina; Forouzmand, Ali; Mosallaei, Hossein, E-mail: hosseinm@coe.neu.edu [Department of Electrical and Computer Engineering, Northeastern University, 360 Huntington Ave., Boston, Massachusetts 02115 (United States)

    2016-01-14

    We present a comprehensive analysis of surface plasmon polariton dispersion characteristics associated with isotropic and anisotropic two-dimensional atomically thin layered materials (2D sheets) coupled to h-BN heterostructures. A scattering matrix based approach is presented to compute the electromagnetic fields and related dispersion characteristics of stacked layered systems composed of anisotropic 2D sheets and uniaxial bulk materials. We analyze specifically the surface plasmon polariton (SPP) dispersion characteristics in case of isolated and coupled two-dimensional layers with isotropic and anisotropic conductivities. An analysis based on residue theorem is utilized to identify optimum optical parameters (surface conductivity) and geometrical parameters (separation between layers) to maximize the SPP field at a given position. The effect of type and degree of anisotropy on the shapes of iso-frequency curves and propagation characteristics is discussed in detail. The analysis presented in this paper gives an insight to identify optimum setup to enhance the SPP field at a given position and in a given direction on the surface of two-dimensional materials.

  2. Boronyl as a terminal ligand in boron oxide clusters: hexagonal ring C(2v) B6O4 and ethylene-like D(2h) B6O4(-/2-).

    Science.gov (United States)

    Wang, Wei; Chen, Qiang; Wang, Ying-Jin; Bai, Hui; Gao, Ting-Ting; Li, Hai-Ru; Zhai, Hua-Jin; Li, Si-Dian

    2015-08-14

    Considerable recent research effort has been devoted to the development of boronyl (BO) chemistry. Here we predict three perfectly planar boron boronyl clusters: C2v B6O4 (1, (1)A1), D2h B6O4(−) (2, (2)B3u), and D2h B6O4(2−) (3, (1)Ag). These are established as the global-minimum structures on the basis of the coalescence kick and basin hopping structural searches and electronic structure calculations at the B3LYP/aug-cc-pVTZ level, with complementary CCSD/6-311+G* and single-point CCSD(T)/6-311+G*//B3LYP/aug-cc-pVTZ calculations for 2. The C2v B6O4 neutral cluster features a hexagonal B4O2 ring with two terminal BO groups. The D2h B6O4(−/2−) clusters have ethylene-like structures and are readily formulated as B2(BO)4(−/2−), in which a B2 core with double bond character is bonded to four terminal BO groups. Chemical bonding analyses show that B6O4 (1) possesses an aromatic π bonding system with three delocalized, six-centered π bonds over the hexagonal ring, rendering it an inorganic analogue of benzene, whereas the B6O4(−/2−) (2 and 3) species closely resemble ethylene in terms of structures and bonding. This work provides new examples for the analogy between boron oxides and hydrocarbons. PMID:26166194

  3. Shock wave compression of hexagonal-close-packed metal single crystals: Time-dependent, anisotropic elastic-plastic response of beryllium

    Science.gov (United States)

    Winey, J. M.; Gupta, Y. M.

    2014-07-01

    Understanding and modeling the response of hcp metals to high stress impulsive loading is challenging because the lower crystal symmetry, compared to cubic metals, results in a significantly more complex material response. To gain insight into the inelastic deformation of hcp metals subjected to high dynamic stresses, shock wave compression of single crystals provides a useful approach because different inelastic deformation mechanisms can be examined selectively by shock compression along different crystal orientations. As a representative example, we report, here, on wave propagation simulations for beryllium (Be) single crystals shocked along the c-axis, a-axis, and several low-symmetry directions to peak stresses reaching 7 GPa. The simulations utilized a time-dependent, anisotropic material model that incorporated dislocation dynamics, deformation twinning, and shear cracking based descriptions of inelastic deformation. The simulation results showed good overall agreement with measured wave profiles for all the different crystal orientations examined [Pope and Johnson, J. Appl. Phys. 46, 720 (1975)], including features arising from wave mode coupling due to the highly anisotropic inelastic response of Be. This good agreement demonstrates that the measured profiles can be understood in terms of dislocation slip along basal, prismatic, and pyramidal planes, together with deformation twinning along { 10 1 ¯ 2 } planes. Our results show that the response of shocked Be single crystals involves the simultaneous operation of multiple, distinct inelastic deformation mechanisms for all orientations except the c-axis. For shocked c-axis Be, the measured wave profiles do not provide good discrimination between pyramidal slip and other inelastic deformation mechanisms, such as shear cracking. The findings presented here provide insight into the complex inelastic deformation response of shocked Be single crystals and are expected to be useful for other hcp crystals. More

  4. Shock wave compression of hexagonal-close-packed metal single crystals: Time-dependent, anisotropic elastic-plastic response of beryllium

    International Nuclear Information System (INIS)

    Understanding and modeling the response of hcp metals to high stress impulsive loading is challenging because the lower crystal symmetry, compared to cubic metals, results in a significantly more complex material response. To gain insight into the inelastic deformation of hcp metals subjected to high dynamic stresses, shock wave compression of single crystals provides a useful approach because different inelastic deformation mechanisms can be examined selectively by shock compression along different crystal orientations. As a representative example, we report, here, on wave propagation simulations for beryllium (Be) single crystals shocked along the c-axis, a-axis, and several low-symmetry directions to peak stresses reaching 7 GPa. The simulations utilized a time-dependent, anisotropic material model that incorporated dislocation dynamics, deformation twinning, and shear cracking based descriptions of inelastic deformation. The simulation results showed good overall agreement with measured wave profiles for all the different crystal orientations examined [Pope and Johnson, J. Appl. Phys. 46, 720 (1975)], including features arising from wave mode coupling due to the highly anisotropic inelastic response of Be. This good agreement demonstrates that the measured profiles can be understood in terms of dislocation slip along basal, prismatic, and pyramidal planes, together with deformation twinning along (101¯2) planes. Our results show that the response of shocked Be single crystals involves the simultaneous operation of multiple, distinct inelastic deformation mechanisms for all orientations except the c-axis. For shocked c-axis Be, the measured wave profiles do not provide good discrimination between pyramidal slip and other inelastic deformation mechanisms, such as shear cracking. The findings presented here provide insight into the complex inelastic deformation response of shocked Be single crystals and are expected to be useful for other hcp crystals. More

  5. Magnetic properties of anisotropic Ba-Zn-Li system W-type hexagonal ferrites; Ihosei Ba-Zn-Li kei W gata ropposho ferrite no jiki tokusei

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, H.; Chono, M. [Meiji University, Tokyo (Japan). School of Science and Technology

    1997-06-15

    This paper describes effects of composition and in-air sintering conditions of anisotropic Ba-Zn-Li system W-type ferrites on their magnetic and mechanical properties. Single W-phase was obtained during semi-sintering by displacing 2Zn{sup 2+} with Li{sup +} and Fe{sup 3+} in the Ba[Zn2(1-x)(LiFe)x]Fe(18)O(27) compound. Phases except W-phase were formed during sintering of the obtained specimen. When the displacement amount of LiFe, x=0.3, the magnetic property (BH)max reached the maximum value. There was not a remarkable improvement compared with the case without displacement. When BaO was added after semi-sintering, the single W-phase could be obtained at lower temperature and the (BH)max value became larger than that before its addition. When the displacement amount of LiFe, x=0.3 in Ba[Zn2(1-x)(LiFe)x]Fe(18)O(27) and 3wt% BaO was added after the semi-sintering, the optimum magnetic property was obtained. For the fabrication conditions, the semi-sintering was conducted at 1275degC for 1 hour in air, and the sintering was conducted at 1225degC for 0.5h in air. A value of (BH)max, 20.40 kJ/m{sup 3} was obtained. 20 refs., 9 figs., 3 tabs.

  6. Boron nitride composites

    Science.gov (United States)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2016-02-16

    According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

  7. Method of manufacture of atomically thin boron nitride

    Science.gov (United States)

    Zettl, Alexander K

    2013-08-06

    The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

  8. Computational Evidence for the Smallest Boron Nanotube

    Institute of Scientific and Technical Information of China (English)

    Xian Jie LIN; Dong Ju ZHANG; Cheng Bu LIU

    2006-01-01

    The structure of boron nanotubes (BNTs) was found not to be limited to hexagonal pyramidal structures. Based on density functional theory calculations we provided evidence for the smallest boron nanotube, a geometrical analog of the corresponding carbon nanotube. As shown by our calculations, the smallest BNT possesses highly structural, dynamical, and thermal stability, which should be interest for attempts at its synthesis.

  9. Hexagons of the Heart

    Science.gov (United States)

    Burkhauser, Beth; Porter, Dave

    2010-01-01

    This article discusses the international interdependence Hexagon Project for Haiti which invites students, ages five through eighteen, to create an image within a hexagonal template and respond to big questions surrounding a global culture of interdependence. The hexagon is a visual metaphor for interdependence, with its potential to infinitely…

  10. Scanning tunneling microscopy study of in-plane graphene-hexagonal boron nitride heterostructures%石墨烯-六方氮化硼面内异质结构的扫描隧道显微学研究

    Institute of Scientific and Technical Information of China (English)

    刘梦溪; 张艳锋; 刘忠范

    2015-01-01

    石墨烯-六方氮化硼面内异质结构因可调控石墨烯的能带结构而受到广泛关注。本文介绍了在超高真空体系内,利用两步生长法在两类对石墨烯分别有强和弱电子掺杂的基底,即Rh(111)和Ir(111)上制备石墨烯-六方氮化硼单原子层异质结构。通过扫描隧道显微镜及扫描隧道谱对这两种材料的形貌和电子结构进行研究发现:石墨烯和六方氮化硼倾向于拼接生长形成单层的异质结构,而非形成各自分立的畴区;在拼接边界处,石墨烯和六方氮化硼原子结构连续无缺陷;拼接边界多为锯齿形型,该实验结果与密度泛函理论计算结果相符合;拼接界面处的石墨烯和六方氮化硼分别具有各自本征的电子结构,六方氮化硼对石墨烯未产生电子掺杂效应。%In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a research focus of graphene due to its predicted fascinating properties such as bandgap opening and magnetism, which hence has ignited the attempt of experimentally growing such in-plane two-dimensional (2D) hybrid materials. Many previous researches demonstrated the synthesis of such heterostructures on Cu foils via chemical vapor deposition (CVD) process. The obtained 2D hybrid materials would offer a possibility for fabricating atomically thin electronic devices. However, many fundamental issues are still unclear, including the in-plane atomic continuity, the edge type, and the electronic properties at the boundary of hybridized h-BN and graphene domain. To clarify these issues, we report the syntheses of h-BN-G monolayer heterostructures on strongly coupled Rh(111) substrate and weakly coupled Ir(111) substrate via a two-step growth process in an ultrahigh vacuum (UHV) system, respectively. With the aid of scanning tunneling microscopy (STM), it is revealed that graphene and h-BN could be linked together seamlessly on an atomic scale at the

  11. Innovative boron nitride-doped propellants

    OpenAIRE

    Thelma Manning; Richard Field; Kenneth Klingaman; Michael Fair; John Bolognini; Robin Crownover; Carlton P. Adam; Viral Panchal; Eugene Rozumov; Henry Grau; Paul Matter; Michael Beachy; Christopher Holt; Samuel Sopok

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower ...

  12. Why Hexagonal Basalt Columns?

    Science.gov (United States)

    Hofmann, Martin; Anderssohn, Robert; Bahr, Hans-Achim; Weiß, Hans-Jürgen; Nellesen, Jens

    2015-10-01

    Basalt columns with their preferably hexagonal cross sections are a fascinating example of pattern formation by crack propagation. Junctions of three propagating crack faces rearrange such that the initial right angles between them tend to approach 120°, which enables the cracks to form a pattern of regular hexagons. To promote understanding of the path on which the ideal configuration can be reached, two periodically repeatable models are presented here involving linear elastic fracture mechanics and applying the principle of maximum energy release rate. They describe the evolution of the crack pattern as a transition from rectangular start configuration to the hexagonal pattern. This is done analytically and by means of three-dimensional finite element simulation. The latter technique reproduces the curved crack path involved in this transition.

  13. Anisotropic mechanical properties and Stone-Wales defects in graphene monolayer: A theoretical study

    Energy Technology Data Exchange (ETDEWEB)

    Fan, B.B. [School of Materials Science and Engineering, Zhengzhou University, Henan 450001 (China); Yang, X.B. [Department of Physics, South China University of Technology, Guangzhou 510640 (China); Zhang, R., E-mail: zhangray@zzu.edu.c [School of Materials Science and Engineering, Zhengzhou University, Henan 450001 (China); Zhengzhou Institute of Aeronautical Industry Management, Henan 450046 (China)

    2010-06-14

    We investigate the mechanical properties of graphene monolayer via the density functional theoretical (DFT) method. We find that the strain energies are anisotropic for the graphene under large strain. We attribute the anisotropic feature to the anisotropic sp{sup 2} hybridization in the hexagonal lattice. We further identify that the formation energies of Stone-Wales (SW) defects in the graphene monolayer are determined by the defect concentration and also the direction of applied tensile strain, correlating with the anisotropic feature.

  14. Safety Assessment of Boron Nitride as Used in Cosmetics.

    Science.gov (United States)

    Fiume, Monice M; Bergfeld, Wilma F; Belsito, Donald V; Hill, Ronald A; Klaassen, Curtis D; Liebler, Daniel C; Marks, James G; Shank, Ronald C; Slaga, Thomas J; Snyder, Paul W; Andersen, F Alan

    2015-01-01

    The Cosmetic Ingredient Review Expert Panel (Panel) assessed the safety of boron nitride which functions in cosmetics as a slip modifier (ie, it has a lubricating effect). Boron nitride is an inorganic compound with a crystalline form that can be hexagonal, spherical, or cubic; the hexagonal form is presumed to be used in cosmetics. The highest reported concentration of use of boron nitride is 25% in eye shadow formulations. Although boron nitride nanotubes are produced, boron nitride is not listed as a nanomaterial used in cosmetic formulations. The Panel reviewed available chemistry, animal data, and clinical data and concluded that this ingredient is safe in the present practices of use and concentration in cosmetic formulations.

  15. Electroextraction of boron from boron carbide scrap

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Ashish [Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Anthonysamy, S., E-mail: sas@igcar.gov.in [Chemistry Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Ghosh, C. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Ravindran, T.R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); Divakar, R.; Mohandas, E. [Physical Metallurgy Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India)

    2013-10-15

    Studies were carried out to extract elemental boron from boron carbide scrap. The physicochemical nature of boron obtained through this process was examined by characterizing its chemical purity, specific surface area, size distribution of particles and X-ray crystallite size. The microstructural characteristics of the extracted boron powder were analyzed by using scanning electron microscopy and transmission electron microscopy. Raman spectroscopic examination of boron powder was also carried out to determine its crystalline form. Oxygen and carbon were found to be the major impurities in boron. Boron powder of purity ∼ 92 wt. % could be produced by the electroextraction process developed in this study. Optimized method could be used for the recovery of enriched boron ({sup 10}B > 20 at. %) from boron carbide scrap generated during the production of boron carbide. - Highlights: • Recovery of {sup 10}B from nuclear grade boron carbide scrap • Development of process flow sheet • Physicochemical characterization of electroextracted boron • Microscopic examination of electroextracted boron.

  16. Anisotropic universe with anisotropic sources

    Energy Technology Data Exchange (ETDEWEB)

    Aluri, Pavan K.; Panda, Sukanta; Sharma, Manabendra; Thakur, Snigdha, E-mail: aluri@iucaa.ernet.in, E-mail: sukanta@iiserb.ac.in, E-mail: manabendra@iiserb.ac.in, E-mail: snigdha@iiserb.ac.in [Department of Physics, IISER Bhopal, Bhopal - 462023 (India)

    2013-12-01

    We analyze the state space of a Bianchi-I universe with anisotropic sources. Here we consider an extended state space which includes null geodesics in this background. The evolution equations for all the state observables are derived. Dynamical systems approach is used to study the evolution of these equations. The asymptotic stable fixed points for all the evolution equations are found. We also check our analytic results with numerical analysis of these dynamical equations. The evolution of the state observables are studied both in cosmic time and using a dimensionless time variable. Then we repeat the same analysis with a more realistic scenario, adding the isotropic (dust like dark) matter and a cosmological constant (dark energy) to our anisotropic sources, to study their co-evolution. The universe now approaches a de Sitter space asymptotically dominated by the cosmological constant. The cosmic microwave background anisotropy maps due to shear are also generated in this scenario, assuming that the universe contains anisotropic matter along with the usual (dark) matter and vacuum (dark) energy since decoupling. We find that they contribute dominantly to the CMB quadrupole. We also constrain the current level of anisotropy and also search for any cosmic preferred axis present in the data. We use the Union 2 Supernovae data to this extent. An anisotropy axis close to the mirror symmetry axis seen in the cosmic microwave background data from Planck probe is found.

  17. Friction anisotropy in boronated graphite

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, N., E-mail: niranjan@igcar.gov.in [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Radhika, R. [Crystal Growth Centre, Anna University, Chennai (India); Kozakov, A.T. [Research Institute of Physics, Southern Federal University, Rostov-on-Don (Russian Federation); Pandian, R. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India); Chakravarty, S. [UGC-DAE CSR, Kalpakkam (India); Ravindran, T.R.; Dash, S.; Tyagi, A.K. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)

    2015-01-01

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient.

  18. Friction anisotropy in boronated graphite

    International Nuclear Information System (INIS)

    Graphical abstract: - Highlights: • Friction anisotropy in boronated graphite is observed in macroscopic sliding condition. • Low friction coefficient is observed in basal plane and becomes high in prismatic direction. • 3D phase of boronated graphite transformed into 2D structure after friction test. • Chemical activity is high in prismatic plane forming strong bonds between the sliding interfaces. - Abstract: Anisotropic friction behavior in macroscopic scale was observed in boronated graphite. Depending upon sliding speed and normal loads, this value was found to be in the range 0.1–0.35 in the direction of basal plane and becomes high 0.2–0.8 in prismatic face. Grazing-incidence X-ray diffraction analysis shows prominent reflection of (0 0 2) plane at basal and prismatic directions of boronated graphite. However, in both the wear tracks (1 1 0) plane become prominent and this transformation is induced by frictional energy. The structural transformation in wear tracks is supported by micro-Raman analysis which revealed that 3D phase of boronated graphite converted into a disordered 2D lattice structure. Thus, the structural aspect of disorder is similar in both the wear tracks and graphite transfer layers. Therefore, the crystallographic aspect is not adequate to explain anisotropic friction behavior. Results of X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy shows weak signature of oxygen complexes and functional groups in wear track of basal plane while these species dominate in prismatic direction. Abundance of these functional groups in prismatic plane indicates availability of chemically active sites tends to forming strong bonds between the sliding interfaces which eventually increases friction coefficient

  19. A Unified Understanding of the Thickness-Dependent Bandgap Transition in Hexagonal Two-Dimensional Semiconductors.

    Science.gov (United States)

    Kang, Joongoo; Zhang, Lijun; Wei, Su-Huai

    2016-02-18

    Many important layered semiconductors, such as hexagonal boron nitride (hBN) and transition-metal dichalcogenides (TMDs), are derived from a hexagonal lattice. A single layer of such hexagonal semiconductors generally has a direct bandgap at the high-symmetry point K, whereas it becomes an indirect, optically inactive semiconductor as the number of layers increases to two or more. Here, taking hBN and MoS2 as examples, we reveal the microscopic origin of the direct-to-indirect bandgap transition of hexagonal layered materials. Our symmetry analysis and first-principles calculations show that the bandgap transition arises from the lack of the interlayer orbital couplings for the band-edge states at K, which are inherently weak because of the crystal symmetries of hexagonal layered materials. Therefore, it is necessary to judiciously break the underlying crystal symmetries to design more optically active, multilayered semiconductors from hBN or TMDs.

  20. Material Induced Anisotropic Damage

    NARCIS (Netherlands)

    Niazi, M.S.; Wisselink, H.H.; Meinders, V.T.; Boogaard, van den A.H.; Hora, P.

    2012-01-01

    The anisotropy in damage can be driven by two different phenomena; anisotropic defor-mation state named Load Induced Anisotropic Damage (LIAD) and anisotropic (shape and/or distribution) second phase particles named Material Induced Anisotropic Damage (MIAD). Most anisotropic damage models are based

  1. Computational Aspects of Carbon and Boron Nanotubes

    Directory of Open Access Journals (Sweden)

    Paul Manuel

    2010-11-01

    Full Text Available Carbon hexagonal nanotubes, boron triangular nanotubes and boron a-nanotubes are a few popular nano structures. Computational researchers look at these structures as graphs where each atom is a node and an atomic bond is an edge. While researchers are discussing the differences among the three nanotubes, we identify the topological and structural similarities among them. We show that the three nanotubes have the same maximum independent set and their matching ratios are independent of the number of columns. In addition, we illustrate that they also have similar underlying broadcasting spanning tree and identical communication behavior.

  2. Research of nanocomposite structure of boron nitride at proton radiation

    OpenAIRE

    Borodin, Yuri Viktorovich; Ermolaev, D. S.; Pak, V.; Zhang, K.

    2016-01-01

    Using roentgen diffraction and electron microscopy, the influence of nanosecond irradiation by ion beams of high energy on forming of self-organized nanoblocks in near surface's layers of boron nitride (BN) has been studied. It was shown that low temperature transitions from hexagonal to wrutz boron nitrides is associated with changes of shape and sizes of self-organized particles consisting the nanoblocks. We have calculated the parameters of nanoblocks using the meanings of interplane dista...

  3. Discovery of Superconductivity in Hard Hexagonal ε-NbN.

    Science.gov (United States)

    Zou, Yongtao; Qi, Xintong; Zhang, Cheng; Ma, Shuailing; Zhang, Wei; Li, Ying; Chen, Ting; Wang, Xuebing; Chen, Zhiqiang; Welch, David; Zhu, Pinwen; Liu, Bingbing; Li, Qiang; Cui, Tian; Li, Baosheng

    2016-01-01

    Since the discovery of superconductivity in boron-doped diamond with a critical temperature (TC) near 4 K, great interest has been attracted in hard superconductors such as transition-metal nitrides and carbides. Here we report the new discovery of superconductivity in polycrystalline hexagonal ε-NbN synthesized at high pressure and high temperature. Direct magnetization and electrical resistivity measurements demonstrate that the superconductivity in bulk polycrystalline hexagonal ε-NbN is below ∼11.6 K, which is significantly higher than that for boron-doped diamond. The nature of superconductivity in hexagonal ε-NbN and the physical mechanism for the relatively lower TC have been addressed by the weaker bonding in the Nb-N network, the co-planarity of Nb-N layer as well as its relatively weaker electron-phonon coupling, as compared with the cubic δ-NbN counterpart. Moreover, the newly discovered ε-NbN superconductor remains stable at pressures up to ∼20 GPa and is significantly harder than cubic δ-NbN; it is as hard as sapphire, ultra-incompressible and has a high shear rigidity of 201 GPa to rival hard/superhard material γ-B (∼227 GPa). This exploration opens a new class of highly desirable materials combining the outstanding mechanical/elastic properties with superconductivity, which may be particularly attractive for its technological and engineering applications in extreme environments. PMID:26923318

  4. Obtuse triangle suppression in anisotropic meshes

    KAUST Repository

    Sun, Feng

    2011-12-01

    Anisotropic triangle meshes are used for efficient approximation of surfaces and flow data in finite element analysis, and in these applications it is desirable to have as few obtuse triangles as possible to reduce the discretization error. We present a variational approach to suppressing obtuse triangles in anisotropic meshes. Specifically, we introduce a hexagonal Minkowski metric, which is sensitive to triangle orientation, to give a new formulation of the centroidal Voronoi tessellation (CVT) method. Furthermore, we prove several relevant properties of the CVT method with the newly introduced metric. Experiments show that our algorithm produces anisotropic meshes with much fewer obtuse triangles than using existing methods while maintaining mesh anisotropy. © 2011 Elsevier B.V. All rights reserved.

  5. Innovative boron nitride-doped propellants

    Directory of Open Access Journals (Sweden)

    Thelma Manning

    2016-04-01

    Full Text Available The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P. Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  6. Innovative boron nitride-doped propellants

    Institute of Scientific and Technical Information of China (English)

    Thelma MANNING; Henry GRAU; Paul MATTER; Michael BEACHY; Christopher HOLT; Samuel SOPOK; Richard FIELD; Kenneth KLINGAMAN; Michael FAIR; John BOLOGNINI; Robin CROWNOVER; Carlton P. ADAM; Viral PANCHAL; Eugene ROZUMOV

    2016-01-01

    The U.S. military has a need for more powerful propellants with balanced/stoichiometric amounts of fuel and oxidants. However, balanced and more powerful propellants lead to accelerated gun barrel erosion and markedly shortened useful barrel life. Boron nitride (BN) is an interesting potential additive for propellants that could reduce gun wear effects in advanced propellants (US patent pending 2015-026P). Hexagonal boron nitride is a good lubricant that can provide wear resistance and lower flame temperatures for gun barrels. Further, boron can dope steel, which drastically improves its strength and wear resistance, and can block the formation of softer carbides. A scalable synthesis method for producing boron nitride nano-particles that can be readily dispersed into propellants has been developed. Even dispersion of the nano-particles in a double-base propellant has been demonstrated using a solvent-based processing approach. Stability of a composite propellant with the BN additive was verified. In this paper, results from propellant testing of boron nitride nano-composite propellants are presented, including closed bomb and wear and erosion testing. Detailed characterization of the erosion tester substrates before and after firing was obtained by electron microscopy, inductively coupled plasma and x-ray photoelectron spectroscopy. This promising boron nitride additive shows the ability to improve gun wear and erosion resistance without any destabilizing effects to the propellant. Potential applications could include less erosive propellants in propellant ammunition for large, medium and small diameter fire arms.

  7. Hexagonal graphene onion rings.

    Science.gov (United States)

    Yan, Zheng; Liu, Yuanyue; Lin, Jian; Peng, Zhiwei; Wang, Gunuk; Pembroke, Elvira; Zhou, Haiqing; Xiang, Changsheng; Raji, Abdul-Rahman O; Samuel, Errol L G; Yu, Ting; Yakobson, Boris I; Tour, James M

    2013-07-24

    Precise spatial control of materials is the key capability of engineering their optical, electronic, and mechanical properties. However, growth of graphene on Cu was revealed to be seed-induced two-dimensional (2D) growth, limiting the synthesis of complex graphene spatial structures. In this research, we report the growth of onion ring like three-dimensional (3D) graphene structures, which are comprised of concentric one-dimensional hexagonal graphene ribbon rings grown under 2D single-crystal monolayer graphene domains. The ring formation arises from the hydrogenation-induced edge nucleation and 3D growth of a new graphene layer on the edge and under the previous one, as supported by first principles calculations. This work reveals a new graphene-nucleation mechanism and could also offer impetus for the design of new 3D spatial structures of graphene or other 2D layered materials. Additionally, in this research, two special features of this new 3D graphene structure were demonstrated, including nanoribbon fabrication and potential use in lithium storage upon scaling. PMID:23815279

  8. An Explanation for Saturn's Hexagon

    Science.gov (United States)

    Kohler, Susanna

    2015-08-01

    For over three decades, weve been gathering observations of the mysterious hexagonal cloud pattern encircling Saturns north pole. Now, researchers believe they have a model that can better explain its formation.Fascinating GeometrySaturns northern Hexagon is a cloud band circling Saturns north pole at 78 N, first observed by the Voyager flybys in 198081. This remarkable pattern has now persisted for more than a Saturn year (29.5 Earth years).Eight frames demonstrating the motion within Saturns Hexagon. Click to watch the animation! The view is from a reference frame rotating with Saturn. [NASA/JPL-Caltech/SSI/Hampton University]Observations by Voyager and, more recently, Cassini have helped to identify many key characteristics of this bizarre structure. Two interesting things weve learned are:The Hexagon is associated with an eastward zonal jet moving at more than 200 mph.The cause of the Hexagon is believed to be a jet stream, similar to the ones that we experience on Earth. The path of the jet itself appears to follow the hexagons outline.The Hexagon rotates at roughly the same rate as Saturns overall rotation.While we observe individual storms and cloud patterns moving at different speeds within the Hexagon, the vertices of the Hexagon move at almost exactly the same rotational speed as that of Saturn itself.Attempts to model the formation of the Hexagon with a jet stream have yet to fully reproduce all of the observed features and behavior. But now, a team led by Ral Morales-Juberas of the New Mexico Institute of Mining and Technology believes they have created a model that better matches what we see.Simulating a Meandering JetThe team ran a series of simulations of an eastward, Gaussian-profile jet around Saturns pole. They introduced small perturbations to the jet and demonstrated that, as a result of the perturbations, the jet can meander into a hexagonal shape. With the initial conditions of the teams model, the meandering jet is able to settle into a

  9. Predicted phase diagram of boron-carbon-nitrogen

    Science.gov (United States)

    Zhang, Hantao; Yao, Sanxi; Widom, Michael

    2016-04-01

    Noting the structural relationships between phases of carbon and boron carbide with phases of boron nitride and boron subnitride, we investigate their mutual solubilities using a combination of first-principles total energies supplemented with statistical mechanics to address finite temperatures. Thus we predict the solid-state phase diagram of boron-carbon-nitrogen (B-C-N). Owing to the large energy costs of substitution, we find that the mutual solubilities of the ultrahard materials diamond and cubic boron nitride are negligible, and the same for the quasi-two-dimensional materials graphite and hexagonal boron nitride. In contrast, we find a continuous range of solubility connecting boron carbide to boron subnitride at elevated temperatures. An electron-precise ternary compound B13CN consisting of B12 icosahedra with NBC chains is found to be stable at all temperatures up to melting. It exhibits an order-disorder transition in the orientation of NBC chains at approximately T =500 K. We also propose that the recently discovered binary B13N2 actually has composition B12.67N2 .

  10. Boron Nitride Nanotubes

    Science.gov (United States)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)

    2012-01-01

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  11. HEXCOH: A programme for computing coherent elastic scatter from hexagonal polycrystals

    International Nuclear Information System (INIS)

    HEXCOH is a computer code written in FORTRAN II for the KDF 9 computer to evaluate the isotropic and linearly anisotropic coherent elastic neutron cross sections in an isotropic polycrystalline solid with a close packed hexagonal lattice structure. The code can only be used at present for graphite, beryllium and beryllium oxide but may be easily extended to include other solids with hexagonal lattices. The cross sections can be computed as averaged values over a weighting spectrum and between energy boundaries specified in the input, or as point values. (author)

  12. Hexagonally ordered nanodots: Result of substrate rotation during oblique incidence low energy IBS

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Debasree, E-mail: debasree.chowdhury@saha.ac.in; Ghose, Debabrata, E-mail: debasree.chowdhury@saha.ac.in [Saha Institute of Nuclear Physics, 1/AF Bidhan Nagar, Kolkata-700064 (India)

    2014-04-24

    The anisotropic regular patterns are often results during oblique incidence ion beam sputtering (IBS). Simultaneous substrate rotation (SR) during IBS can suppress surface roughening and removes anisotropic nature of surface pattern. Here, the evolution of Si surface morphology as result of with and without SR is studied during oblique incidence low energy Ar{sup +} sputtering. Resultant topography shows smooth surface to hexagonally ordered nanodots at different rotating conditions. Interestingly, surface roughness exhibits non-monotonic dependence on rotation frequency. The underlying mechanism for dot formation can be described within the framework of isotropic DKS equation.

  13. Anisotropic and dispersive wave propagation within strain-gradient framework

    CERN Document Server

    Rosi, Giuseppe

    2016-01-01

    In this paper anisotropic and dispersive wave propagation within linear strain-gradient elasticity is investigated. This analysis reveals significant features of this extended theory of continuum elasticity. First, and contrarily to classical elasticity, wave propagation in hexagonal (chiral or achiral) lattices becomes anisotropic as the frequency increases. Second, since strain-gradient elasticity is dispersive, group and energy velocities have to be treated as different quantities. These points are first theoretically derived, and then numerically experienced on hexagonal chiral and achiral lattices. The use of a continuum model for the description of the high frequency behavior of these microstructured materials can be of great interest in engineering applications, allowing problems with complex geometries to be more easily treated.

  14. Microplasma Processed Ultrathin Boron Nitride Nanosheets for Polymer Nanocomposites with Enhanced Thermal Transport Performance.

    Science.gov (United States)

    Zhang, Ri-Chao; Sun, Dan; Lu, Ai; Askari, Sadegh; Macias-Montero, Manuel; Joseph, Paul; Dixon, Dorian; Ostrikov, Kostya; Maguire, Paul; Mariotti, Davide

    2016-06-01

    This Research Article reports on the enhancement of the thermal transport properties of nanocomposite materials containing hexagonal boron nitride in poly(vinyl alcohol) through room-temperature atmospheric pressure direct-current microplasma processing. Results show that the microplasma treatment leads to exfoliation of the hexagonal boron nitride in isopropyl alcohol, reducing the number of stacks from >30 to a few or single layers. The thermal diffusivity of the resulting nanocomposites reaches 8.5 mm(2) s(-1), 50 times greater than blank poly(vinyl alcohol) and twice that of nanocomposites containing nonplasma treated boron nitride nanosheets. From TEM analysis, we observe much less aggregation of the nanosheets after plasma processing along with indications of an amorphous carbon interfacial layer, which may contribute to stable dispersion of boron nitride nanosheets in the resulting plasma treated colloids. PMID:27153343

  15. Graphene quantum dot on boron nitride: Dirac cone replica and Hofstadter butterfly

    OpenAIRE

    Chizhova, L. A.; Libisch, F.; Burgdörfer, J.

    2014-01-01

    Graphene flakes placed on hexagonal boron nitride feature in the presence of a magnetic field a complex electronic structure due to a hexagonal moir\\'e potential resulting from the van der Waals interaction with the substrate. The slight lattice mismatch gives rise to a periodic supercell potential. Zone folding is expected to create replica of the original Dirac cone and Hofstadter butterflies. Our large-scale tight binding simulation reveals an unexpected coexistence of a relativistic and n...

  16. Boron nitride nanomaterials for thermal management applications.

    Science.gov (United States)

    Meziani, Mohammed J; Song, Wei-Li; Wang, Ping; Lu, Fushen; Hou, Zhiling; Anderson, Ankoma; Maimaiti, Halidan; Sun, Ya-Ping

    2015-05-18

    Hexagonal boron nitride nanosheets (BNNs) are analogous to their two-dimensional carbon counterparts in many materials properties, in particular, ultrahigh thermal conductivity, but also offer some unique attributes, including being electrically insulating, high thermal stability, chemical and oxidation resistance, low color, and high mechanical strength. Significant recent advances in the production of BNNs, understanding of their properties, and the development of polymeric nanocomposites with BNNs for thermally conductive yet electrically insulating materials and systems are highlighted herein. Major opportunities and challenges for further studies in this rapidly advancing field are also discussed. PMID:25652360

  17. Anomalous thermal conductivity of monolayer boron nitride

    Science.gov (United States)

    Tabarraei, Alireza; Wang, Xiaonan

    2016-05-01

    In this paper, we use nonequilibrium molecular dynamics modeling to investigate the thermal properties of monolayer hexagonal boron nitride nanoribbons under uniaxial strain along their longitudinal axis. Our simulations predict that hexagonal boron nitride shows an anomalous thermal response to the applied uniaxial strain. Contrary to three dimensional materials, under uniaxial stretching, the thermal conductivity of boron nitride nanoribbons first increases rather than decreasing until it reaches its peak value and then starts decreasing. Under compressive strain, the thermal conductivity of monolayer boron nitride ribbons monolithically reduces rather than increasing. We use phonon spectrum and dispersion curves to investigate the mechanism responsible for the unexpected behavior. Our molecular dynamics modeling and density functional theory results show that application of longitudinal tensile strain leads to the reduction of the group velocities of longitudinal and transverse acoustic modes. Such a phonon softening mechanism acts to reduce the thermal conductivity of the nanoribbons. On the other hand, a significant increase in the group velocity (stiffening) of the flexural acoustic modes is observed, which counteracts the phonon softening effects of the longitudinal and transverse modes. The total thermal conductivity of the ribbons is a result of competition between these two mechanisms. At low tensile strain, the stiffening mechanism overcomes the softening mechanism which leads to an increase in the thermal conductivity. At higher tensile strain, the softening mechanism supersedes the stiffening and the thermal conductivity slightly reduces. Our simulations show that the decrease in the thermal conductivity under compressive strain is attributed to the formation of buckling defects which reduces the phonon mean free path.

  18. A Spring Model for a Cylindrical Interface Layer with Hexagonal SymmetryBetween Two Solids

    Institute of Scientific and Technical Information of China (English)

    LIU Sheng-Xing; WANG Yao-Jun

    2000-01-01

    A unique spring model is established to describe a cylindrical interface layer with hexagonal (or transversely isotropic) symmetry between two solids, which is realized by asymptotically expanding the transfer matrix for the anisotropic layer. The accuracy of the model is evaluated based on a comparison between the exact and the approximate solutions of the scattering cross sections of an obliquely incident ultrasonic wave from an interface layer with different thickness.

  19. EDGE-ORIENTED HEXAGONAL ELEMENTS

    Institute of Scientific and Technical Information of China (English)

    Chao Yang; Jiachang Sun

    2007-01-01

    In this paper, two new nonconforming hexagonal elements are presented, which are based on the trilinear function space Q(3)1 and are edge-oriented, analogical to the case of the rotated Q1 quadrilateral element. A priori error estimates are given to show that the new elements achieve first-order accuracy in the energy norm and second-order accuracy in the L2 norm. This theoretical result is confirmed by the numerical tests.

  20. Superconductivity in heavily boron-doped silicon carbide

    Directory of Open Access Journals (Sweden)

    Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

    2008-01-01

    Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

  1. Boron nitride converted carbon fiber

    Energy Technology Data Exchange (ETDEWEB)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  2. Strongly interacting particles on an anisotropic kagome lattice

    Energy Technology Data Exchange (ETDEWEB)

    Hotta, Chisa; Pollmann, Frank, E-mail: chisa@cc.kyoto-su.ac.j [Kyoto Sangyo University, Department of Physics, Faculty of Science, Kyoto 603-8555, Japan Department of Physics, University of California, Berkeley, CA94720 (United States)

    2009-01-01

    We study a model of strongly interacting spinless fermions and hard-core bosons on an anisotropic kagome lattice near 2/3-filling. Our main focus lies on the strongly anisotropic case in which the nearest-neighbor repulsions V and V' are large compared to the hopping amplitudes |t| and |t'|. When t = t' = 0, the system has a charge ordered insulating ground state where the charges align in striped configurations. Doping one electron or hole into the ground state yields an anisotropic metal at V' > V, where the particle fractionalizes along the V'-bonds while propagates along the V-bonds in a one-body like manner. The sixth order ring exchange processes around the hexagonal unit of the lattice play a crucial role in forming a bound state of fractional charges.

  3. Strongly interacting particles on an anisotropic kagome lattice

    Science.gov (United States)

    Hotta, Chisa; Pollmann, Frank

    2009-01-01

    We study a model of strongly interacting spinless fermions and hard-core bosons on an anisotropic kagome lattice near 2/3-filling. Our main focus lies on the strongly anisotropic case in which the nearest-neighbor repulsions V and V' are large compared to the hopping amplitudes |t| and |t'|. When t = t' = 0, the system has a charge ordered insulating ground state where the charges align in striped configurations. Doping one electron or hole into the ground state yields an anisotropic metal at V' > V, where the particle fractionalizes along the V'-bonds while propagates along the V-bonds in a one-body like manner. The sixth order ring exchange processes around the hexagonal unit of the lattice play a crucial role in forming a bound state of fractional charges.

  4. Anisotropic Stars II Stability

    CERN Document Server

    Dev, K; Dev, Krsna; Gleiser, Marcelo

    2003-01-01

    We investigate the stability of self-gravitating spherically symmetric anisotropic spheres under radial perturbations. We consider both the Newtonian and the full general-relativistic perturbation treatment. In the general-relativistic case, we extend the variational formalism for spheres with isotropic pressure developed by Chandrasekhar. We find that, in general, when the tangential pressure is greater than the radial pressure, the stability of the anisotropic sphere is enhanced when compared to isotropic configurations. In particular, anisotropic spheres are found to be stable for smaller values of the adiabatic index $\\gamma$.

  5. Nitrogen implantation effects on the chemical bonding and hardness of boron and boron nitride coatings

    Energy Technology Data Exchange (ETDEWEB)

    Anders, S; Felter, T; Hayes, J; Jankowski, A F; Patterson, R; Poker, D; Stamler, T

    1999-02-08

    Boron nitride (BN) coatings are deposited by the reactive sputtering of fully dense, boron (B) targets utilizing an argon-nitrogen (Ar-N{sub 2}) reactive gas mixture. Near-edge x-ray absorption fine structure analysis reveals features of chemical bonding in the B 1s photoabsorption spectrum. Hardness is measured at the film surface using nanoindentation. The BN coatings prepared at low, sputter gas pressure with substrate heating are found to have bonding characteristic of a defected hexagonal phase. The coatings are subjected to post-deposition nitrogen (N{sup +} and N{sub 2}{sup +}) implantation at different energies and current densities. The changes in film hardness attributed to the implantation can be correlated to changes observed in the B 1s NEXAFS spectra.

  6. Anisotropic Contrast Optical Microscope

    CERN Document Server

    Peev, D; Kananizadeh, N; Wimer, S; Rodenhausen, K B; Herzinger, C M; Kasputis, T; Pfaunmiller, E; Nguyen, A; Korlacki, R; Pannier, A; Li, Y; Schubert, E; Hage, D; Schubert, M

    2016-01-01

    An optical microscope is described that reveals contrast in the Mueller matrix images of a thin, transparent or semi-transparent specimen located within an anisotropic object plane (anisotropic filter). The specimen changes the anisotropy of the filter and thereby produces contrast within the Mueller matrix images. Here we use an anisotropic filter composed of a semi-transparent, nanostructured thin film with sub-wavelength thickness placed within the object plane. The sample is illuminated as in common optical microscopy but the light is modulated in its polarization using combinations of linear polarizers and phase plate (compensator) to control and analyze the state of polarization. Direct generalized ellipsometry data analysis approaches permit extraction of fundamental Mueller matrix object plane images dispensing with the need of Fourier expansion methods. Generalized ellipsometry model approaches are used for quantitative image analyses. We demonstrate the anisotropic contrast optical microscope by mea...

  7. A 3D porous media liver lobule model: the importance of vascular septa and anisotropic permeability for homogeneous perfusion

    OpenAIRE

    Debbaut, Charlotte; Vierendeels, Jan; Siggers, Jennifer H.; Repetto, Rodolfo; Monbaliu, Diethard; Segers, Patrick

    2014-01-01

    The hepatic blood circulation is complex, particularly at the microcirculatory level. Previously, 2D liver lobule models using porous media and a 3D model using real sinusoidal geometries have been developed. We extended these models to investigate the role of vascular septa (VS) and anisotropic permeability. The lobule was modelled as a hexagonal prism (with or without VS) and the tissue was treated as a porous medium (isotropic or anisotropic permeability). Models were solved using computat...

  8. Extremal hexagonal chains concerning largest eigenvalue

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    In this paper, we define a roll-attaching operation of a hexagonal chain, and prove Gutman's conjecture affirmatively by using the operation. The idea of the proof is also applicable to the results concerning extremal hexagonal chains for the Hosoya index and Merrifield-Simmons index.

  9. Two-dimensional boron based nanomaterials: electronic, vibrational, Raman, and STM signatures

    Science.gov (United States)

    Massote, Daniel V. P.; Liang, Liangbo; Kharche, Neerav; Meunier, Vincent

    Because boron has only three electrons on its outer shell, planar mono-elemental boron nanostructures are expected to be much more challenging to assemble than their carbon counterparts. Several studies proposed schemes in which boron is stabilized to form flat semiconducting sheets consisting of a hexagonal lattice of boron atoms with partial hexagon filling (PRL 99 115501, ACSNano 6 7443-7453) . Other structures were proposed based on results from an evolutionary algorithm (PRL 112 085502). These structures are metallic and one even features a distorted Dirac cone near the Fermi level. Experimental evidence for 2D boron is still lacking but the recently proposed molecular synthesis of a flat all-boron molecule is a promising route to achieve this goal (Nat.Comms. 5 3113). Our research aims at providing a first-principles based description of these materials' properties to help in their identification. DFT is used to calculate phonon dispersion and associated Raman scattering spectra. We report some marked discrepancy between our findings and results from the recent literature and address the deviation using two methods for phonon dispersion. We also simulated STM images at various bias potentials to reveal the electronic symmetry of each material.

  10. Structure, stability and defects of single layer hexagonal BN in comparison to graphene

    International Nuclear Information System (INIS)

    We study by molecular dynamics the structural properties of single layer hexagonal boron nitride (h-BN) in comparison to graphene. We show that the Tersoff bond order potential developed for BN by Albe et al (1997 Radiat. Eff. Defects Solids 141 8597) gives a thermally stable hexagonal single layer with a bending constant κ = 0.54 eV at T = 0. We find that the non-monotonic behaviour of the lattice parameter, the expansion of the interatomic distance and the growth of the bending rigidity with temperature are qualitatively similar to those of graphene. Conversely, the energetics of point defects is extremely different: instead of StoneWales defects, the two lowest energy defects in h-BN involve either a broken bond or an out-of-plane displacement of a N atom to form a tetrahedron with three B atoms in the plane. We provide the formation energies and an estimate of the energy barriers.

  11. Quasiparticle anisotropic hydrodynamics

    CERN Document Server

    Alqahtani, Mubarak

    2016-01-01

    We study an azimuthally-symmetric boost-invariant quark-gluon plasma using quasiparticle anisotropic hydrodynamics including the effects of both shear and bulk viscosities. We compare results obtained using the quasiparticle method with the standard anisotropic hydrodynamics and viscous hydrodynamics. We consider the predictions of the three methods for the differential particle spectra and mean transverse momentum. We find that the three methods agree for small shear viscosity to entropy density ratio, $\\eta/s$, but show differences at large $\\eta/s$. Additionally, we find that the standard anisotropic hydrodynamics method shows suppressed production at low transverse-momentum compared to the other two methods, and the bulk-viscous correction can drive the primordial particle spectra negative at large $p_T$ in viscous hydrodynamics.

  12. Averaging anisotropic cosmologies

    International Nuclear Information System (INIS)

    We examine the effects of spatial inhomogeneities on irrotational anisotropic cosmologies by looking at the average properties of anisotropic pressure-free models. Adopting the Buchert scheme, we recast the averaged scalar equations in Bianchi-type form and close the standard system by introducing a propagation formula for the average shear magnitude. We then investigate the evolution of anisotropic average vacuum models and those filled with pressureless matter. In the latter case we show that the backreaction effects can modify the familiar Kasner-like singularity and potentially remove Mixmaster-type oscillations. The presence of nonzero average shear in our equations also allows us to examine the constraints that a phase of backreaction-driven accelerated expansion might put on the anisotropy of the averaged domain. We close by assessing the status of these and other attempts to define and calculate 'average' spacetime behaviour in general relativity

  13. HEXBU-3D, a three-dimensional PWR-simulator program for hexagonal fuel assemblies

    International Nuclear Information System (INIS)

    HEXBU-3D is a three-dimensional nodal simulator program for PWR reactors. It is designed for a reactor core that consists of hexagonal fuel assemblies and of big follower-type control assemblies. The program solves two-group diffusion equations in homogenized fuel assembly geometry by a sophisticated nodal method. The treatment of feedback effects from xenon-poisoning, fuel temperature, moderator temperature and density and soluble boron concentration are included in the program. The nodal equations are solved by a fast two-level iteration technique and the eigenvalue can be either the effective multiplication factor or the boron concentration of the moderator. Burnup calculations are performed by tabulated sets of burnup-dependent cross sections evaluated by a cell burnup program. HEXBY-3D has been originally programmed in FORTRAN V for the UNIVAC 1108 computer, but there is also another version which is operable on the CDC CYBER 170 computer. (author)

  14. Molecular anisotropic magnetoresistance

    Science.gov (United States)

    Otte, Fabian; Heinze, Stefan; Mokrousov, Yuriy

    2015-12-01

    Using density functional theory calculations, we demonstrate that the effect of anisotropic magnetoresistance (AMR) can be enhanced by orders of magnitude with respect to conventional bulk ferromagnets in junctions containing molecules sandwiched between ferromagnetic leads. We study ballistic transport in metal-benzene complexes contacted by 3 d transition-metal wires. We show that a gigantic AMR can arise from spin-orbit coupling effects in the leads, drastically enhanced by orbital-symmetry filtering properties of the molecules. We further discuss how this molecular anisotropic magnetoresistance (MAMR) can be tuned by the proper choice of materials and their electronic properties.

  15. Anisotropic elastic plates

    CERN Document Server

    Hwu, Chyanbin

    2010-01-01

    As structural elements, anisotropic elastic plates find wide applications in modern technology. The plates here are considered to be subjected to not only in plane load but also transverse load. In other words, both plane and plate bending problems as well as the stretching-bending coupling problems are all explained in this book. In addition to the introduction of the theory of anisotropic elasticity, several important subjects have are discussed in this book such as interfaces, cracks, holes, inclusions, contact problems, piezoelectric materials, thermoelastic problems and boundary element a

  16. Mixture of Anisotropic Fluids

    Science.gov (United States)

    Florkowski, W.; Maj, R.

    The recently introduced approach describing coupled quark and gluon anisotropic fluids is generalized to include explicitly the transitions between quarks and gluons. We study the effects of such processes on the thermalization rate of anisotropic systems. We find that the quark-gluon transitions may enhance the overall thermalization rate in the cases where the initial momentum anisotropies correspond to mixed oblate-prolate or prolate configurations. On the other hand, no effect on the thermalization rate is found in the case of oblate configurations. The observed regularities are connected with the late-time behavior of the analyzed systems which is described either by the exponential decay or the power law.

  17. Mixture of anisotropic fluids

    CERN Document Server

    Florkowski, Wojciech

    2013-01-01

    The recently introduced approach describing coupled quark and gluon anisotropic fluids is generalized to include explicitly the transitions between quarks and gluons. We study the effects of such processes on the thermalization rate of anisotropic systems. We find that the quark-gluon transitions may enhance the overall thermalization rate in the cases where the initial momentum anisotropies correspond to mixed oblate-prolate or prolate configurations. On the other hand, no effect on the thermalization rate is found in the case of oblate configurations. The observed regularities are connected with the late-time behavior of the analyzed systems which is described either by the exponential decay or the power law.

  18. Anisotropic Weyl invariance

    CERN Document Server

    Pérez-Nadal, Guillem

    2016-01-01

    We consider a non-relativistic free scalar field theory with a type of anisotropic scale invariance in which the number of coordinates "scaling like time" is generically greater than one. We propose the Cartesian product of two curved spaces, with the metric of each space parameterized by the other space, as a notion of curved background to which the theory can be extended. We study this type of geometries, and find a family of extensions of the theory to curved backgrounds in which the anisotropic scale invariance is promoted to a local, Weyl-type symmetry.

  19. Anisotropic models for compact stars

    CERN Document Server

    Maurya, S K; Ray, Saibal; Dayanandan, Baiju

    2015-01-01

    In the present paper we obtain an anisotropic analogue of Durgapal-Fuloria (1985) perfect fluid solution. The methodology consists of contraction of anisotropic factor $\\Delta$ by the help of both metric potentials $e^{\

  20. Fermionic pentagons and NMHV hexagon

    Directory of Open Access Journals (Sweden)

    A.V. Belitsky

    2015-05-01

    Full Text Available We analyze the near-collinear limit of the null polygonal hexagon super Wilson loop in the planar N=4 super-Yang–Mills theory. We focus on its Grassmann components which are dual to next-to-maximal helicity-violating (NMHV scattering amplitudes. The kinematics in question is studied within a framework of the operator product expansion that encodes propagation of excitations on the background of the color flux tube stretched between the sides of Wilson loop contour. While their dispersion relation is known to all orders in 't Hooft coupling from previous studies, we find their form factor couplings to the Wilson loop. This is done making use of a particular tessellation of the loop where pentagon transitions play a fundamental role. Being interested in NMHV amplitudes, the corresponding building blocks carry a nontrivial charge under the SU(4 R-symmetry group. Restricting the current consideration to twist-two accuracy, we analyze two-particle contributions with a fermion as one of the constituents in the pair. We demonstrate that these nonsinglet pentagons obey bootstrap equations that possess consistent solutions for any value of the coupling constant. To confirm the correctness of these predictions, we calculate their contribution to the super Wilson loop demonstrating agreement with recent results to four-loop order in 't Hooft coupling.

  1. Fermionic pentagons and NMHV hexagon

    CERN Document Server

    Belitsky, A V

    2014-01-01

    We analyze the near-collinear limit of the null polygonal hexagon super Wilson loop in the planar $\\mathcal{N} = 4$ superYang-Mills theory. We focus on its Grassmann components which are dual to next-to-maximally helicity-violating (NMHV) scattering amplitudes. The kinematics in question is studied within a framework of the operator product expansion that encodes propagation of excitations on the background of the color flux tube stretched between the sides of Wilson loop contour. While their dispersion relation is known to all orders in 't Hooft coupling from previous studies, we find their form factor couplings to the Wilson loop. This is done making use of a particular tessellation of the loop where pentagon transitions play a fundamental role. Being interested in NMHV amplitudes, the corresponding building blocks carry a nontrivial charge under the SU(4) R-symmetry group. Restricting the current consideration to twist-two accuracy, we analyze two-particle contributions with a fermion as one of the constit...

  2. Fermionic pentagons and NMHV hexagon

    Science.gov (United States)

    Belitsky, A. V.

    2015-05-01

    We analyze the near-collinear limit of the null polygonal hexagon super Wilson loop in the planar N = 4 super-Yang-Mills theory. We focus on its Grassmann components which are dual to next-to-maximal helicity-violating (NMHV) scattering amplitudes. The kinematics in question is studied within a framework of the operator product expansion that encodes propagation of excitations on the background of the color flux tube stretched between the sides of Wilson loop contour. While their dispersion relation is known to all orders in 't Hooft coupling from previous studies, we find their form factor couplings to the Wilson loop. This is done making use of a particular tessellation of the loop where pentagon transitions play a fundamental role. Being interested in NMHV amplitudes, the corresponding building blocks carry a nontrivial charge under the SU(4) R-symmetry group. Restricting the current consideration to twist-two accuracy, we analyze two-particle contributions with a fermion as one of the constituents in the pair. We demonstrate that these nonsinglet pentagons obey bootstrap equations that possess consistent solutions for any value of the coupling constant. To confirm the correctness of these predictions, we calculate their contribution to the super Wilson loop demonstrating agreement with recent results to four-loop order in 't Hooft coupling.

  3. Gluing hexagons at three loops

    Science.gov (United States)

    Basso, Benjamin; Goncalves, Vasco; Komatsu, Shota; Vieira, Pedro

    2016-06-01

    We perform extensive three-loop tests of the hexagon bootstrap approach for structure constants in planar N = 4 SYM theory. We focus on correlators involving two BPS operators and one non-BPS operator in the so-called SL (2) sector. At three loops, such correlators receive wrapping corrections from mirror excitations flowing in either the adjacent or the opposing channel. Amusingly, we find that the first type of correction coincides exactly with the leading wrapping correction for the spectrum (divided by the one-loop anomalous dimension). We develop an efficient method for computing the second type of correction for operators with any spin. The results are in perfect agreement with the recently obtained three-loop perturbative data by Chicherin, Drummond, Heslop, Sokatchev [2] and by Eden [3]. We also derive the integrand for general multi-particle wrapping corrections, which turns out to take a remarkably simple form. As an application we estimate the loop order at which various new physical effects are expected to kick-in.

  4. Hexagonal image processing a practical approach

    CERN Document Server

    Middleton, Lee

    2006-01-01

    This book provides an introduction to the processing of hexagonally sampled images, includes a survey of the work done in the field, and presents a novel framework for hexagonal image processing (HIP) based on hierarchical aggregates. The strengths offered by hexagonal lattices over square lattices to define digital images are considerable: higher packing density; uniform connectivity of points (pixels) in the lattice; better angular resolution by virtue of having more nearest neighbours; and superlative representation of curves. The utility of the HIP framework is shown by implementing severa

  5. On the Newtonian anisotropic configurations

    Energy Technology Data Exchange (ETDEWEB)

    Shojai, F. [University of Tehran, Department of Physics, Tehran (Iran, Islamic Republic of); Institute for Research in Fundamental Sciences (IPM), Foundations of Physics Group, School of Physics, Tehran (Iran, Islamic Republic of); Fazel, M.R.; Stepanian, A. [University of Tehran, Department of Physics, Tehran (Iran, Islamic Republic of); Kohandel, M. [Alzahra University, Department of Sciences, Tehran (Iran, Islamic Republic of)

    2015-06-15

    In this paper we are concerned with the effects of an anisotropic pressure on the boundary conditions of the anisotropic Lane-Emden equation and the homology theorem. Some new exact solutions of this equation are derived. Then some of the theorems governing the Newtonian perfect fluid star are extended, taking the anisotropic pressure into account. (orig.)

  6. Anisotropic Lyra cosmology

    Indian Academy of Sciences (India)

    B B Bhowmik; A Rajput

    2004-06-01

    Anisotropic Bianchi Type-I cosmological models have been studied on the basis of Lyra's geometry. Two types of models, one with constant deceleration parameter and the other with variable deceleration parameter have been derived by considering a time-dependent displacement field.

  7. Dynamics of Anisotropic Universes

    CERN Document Server

    Pérez, J

    2006-01-01

    We present a general study of the dynamical properties of Anisotropic Bianchi Universes in the context of Einstein General Relativity. Integrability results using Kovalevskaya exponents are reported and connected to general knowledge about Bianchi dynamics. Finally, dynamics toward singularity in Bianchi type VIII and IX universes are showed to be equivalent in some precise sence.

  8. Anisotropic domain structure of KTiOPO4 crystals

    Science.gov (United States)

    Urenski, P.; Lesnykh, M.; Rosenwaks, Y.; Rosenman, G.; Molotskii, M.

    2001-08-01

    Highly anisotropic ferroelectric domain structure is observed in KTiOPO4 (KTP) crystals reversed by low electric field. The applied Miller-Weinreich model for sidewise motion of domain walls indicates that this anisotropy results from the peculiarities of KTP crystal lattice. The domain nuclei of dozen nanometer size, imaged by atomic force microscopy method, demonstrate regular hexagonal forms. The orientation of domain walls of the elementary nuclei coincides with the orientation of the facets of macroscopic KTP crystals. The observed strong domain elongation along one principal crystal axis allows us to improve tailoring of ferroelectric domain engineered structures for nonlinear optical converters.

  9. First boronization in KSTAR

    Energy Technology Data Exchange (ETDEWEB)

    Hong, S.H., E-mail: sukhhong@nfri.re.kr [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Lee, K.S.; Kim, K.M.; Kim, H.T.; Kim, G.P. [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Sun, J.H.; Woo, H.J. [Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of); Park, J.M.; Kim, W.C.; Kim, H.K.; Park, K.R.; Yang, H.L.; Na, H.K. [National Fusion Research Institute, 113 Gwahangno, Yusung-Gu, Daejeon 305-333 (Korea, Republic of); Chung, K.S. [Department of Electrical Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Center for Edge Plasma Science (cEps), Hanyang University, Seoul 133-791 (Korea, Republic of)

    2010-11-15

    First boronization in KSTAR is reported. KSTAR boronization system is based on a carborane (C{sub 2}B{sub 10}H{sub 12}) injection system. The design, construction, and test of the system are accomplished and it is tested by using a small vacuum vessel before it is mounted to a KSTAR port. After the boronization in KSTAR, impurity levels are significantly reduced by factor of 3 (oxygen) and by 10 (carbon). Characteristics of a-C/B:H thin films deposited by carborane vapor are investigated. Re-condensation of carborane vapor during the test phase has been reported.

  10. Anisotropic mechanical properties of graphene sheets from molecular dynamics

    International Nuclear Information System (INIS)

    Anisotropic mechanical properties are observed for a sheet of graphene along different load directions. The anisotropic mechanical properties are attributed to the hexagonal structure of the unit cells of the graphene. Under the same tensile loads, the edge bonds bear larger load in the longitudinal mode (LM) than in the transverse mode (TM), which causes fracture sooner in LM than in TM. The Young's modulus and the third order elastic modulus for the LM are slightly larger than that for the TM. Simulation also demonstrates that, for both LM and TM, the loading and unloading stress-strain response curves overlap as long as the graphene is unloaded before the fracture point. This confirms that graphene sustains complete elastic and reversible deformation in the elongation process.

  11. Phonon transport in single-layer boron nanoribbons.

    Science.gov (United States)

    Zhang, Zhongwei; Xie, Yuee; Peng, Qing; Chen, Yuanping

    2016-11-01

    Inspired by the successful synthesis of three two-dimensional (2D) allotropes, the boron sheet has recently been one of the hottest 2D materials around. However, to date, phonon transport properties of these new materials are still unknown. By using the non-equilibrium Green's function (NEGF) combined with the first principles method, we study ballistic phonon transport in three types of boron sheets; two of them correspond to the structures reported in the experiments, while the third one is a stable structure that has not been synthesized yet. At room temperature, the highest thermal conductance of the boron nanoribbons is comparable with that of graphene, while the lowest thermal conductance is less than half of graphene's. Compared with graphene, the three boron sheets exhibit diverse anisotropic transport characteristics. With an analysis of phonon dispersion, bonding charge density, and simplified models of atomic chains, the mechanisms of the diverse phonon properties are discussed. Moreover, we find that many hybrid patterns based on the boron allotropes can be constructed naturally without doping, adsorption, and defects. This provides abundant nanostructures for thermal management and thermoelectric applications. PMID:27669055

  12. Phonon transport in single-layer boron nanoribbons

    Science.gov (United States)

    Zhang, Zhongwei; Xie, Yuee; Peng, Qing; Chen, Yuanping

    2016-11-01

    Inspired by the successful synthesis of three two-dimensional (2D) allotropes, the boron sheet has recently been one of the hottest 2D materials around. However, to date, phonon transport properties of these new materials are still unknown. By using the non-equilibrium Green’s function (NEGF) combined with the first principles method, we study ballistic phonon transport in three types of boron sheets; two of them correspond to the structures reported in the experiments, while the third one is a stable structure that has not been synthesized yet. At room temperature, the highest thermal conductance of the boron nanoribbons is comparable with that of graphene, while the lowest thermal conductance is less than half of graphene’s. Compared with graphene, the three boron sheets exhibit diverse anisotropic transport characteristics. With an analysis of phonon dispersion, bonding charge density, and simplified models of atomic chains, the mechanisms of the diverse phonon properties are discussed. Moreover, we find that many hybrid patterns based on the boron allotropes can be constructed naturally without doping, adsorption, and defects. This provides abundant nanostructures for thermal management and thermoelectric applications.

  13. Boron in sillimanite.

    Science.gov (United States)

    Grew, E S; Hinthorne, J R

    1983-08-01

    Sillimanite in six granulite-facies, kornerupine-bearing rocks contains 0.035 to 0.43 percent B(2)O(3) and 0.02 to 0.23 percent MgO (by weight). Substitution of boron for silicon and magnesium for aluminum is coupled such that the ratio of magnesium to boron is about 0.5. Sillimanite incorporates more than 0.1 percent B(2)O(3) only at high temperatures in a boron-rich environment at very low partial pressures of water. In the amphibolite facies, the sillimanite boron contents are too low to appreciably affect the stability relations of sillimanite with kyanite and andalusite. PMID:17830955

  14. A template-free solvent-mediated synthesis of high surface area boron nitride nanosheets for aerobic oxidative desulfurization.

    Science.gov (United States)

    Wu, Peiwen; Zhu, Wenshuai; Chao, Yanhong; Zhang, Jinshui; Zhang, Pengfei; Zhu, Huiyuan; Li, Changfeng; Chen, Zhigang; Li, Huaming; Dai, Sheng

    2016-01-01

    Hexagonal boron nitride nanosheets (h-BNNs) with rather high specific surface area (SSA) are important two-dimensional layer-structured materials. Here, a solvent-mediated synthesis of h-BNNs revealed a template-free lattice plane control strategy that induced high SSA nanoporous structured h-BNNs with outstanding aerobic oxidative desulfurization performance. PMID:26502800

  15. Inhomogeneous Anisotropic Cosmology

    CERN Document Server

    Kleban, Matthew

    2016-01-01

    In homogeneous and isotropic Friedmann-Robertson-Walker cosmology, the topology of the universe determines its ultimate fate. If the Weak Energy Condition is satisfied, open and flat universes must expand forever, while closed cosmologies can recollapse to a Big Crunch. A similar statement holds for homogeneous but anisotropic (Bianchi) universes. Here, we prove that ${\\it arbitrarily}$ inhomogeneous and anisotropic cosmologies with "flat" (including toroidal) and "open" (including compact hyperbolic) spatial topology that are initially expanding must continue to expand forever at least in some region, despite the presence of arbitrarily large density fluctuations and/or the formation of black holes. Because the set of 3-manifold topologies is countable, a single integer determines the ultimate fate of the universe, and, in a specific sense, most 3-manifolds are "flat" or "open". Our result has important implications for inflation: if there is a positive cosmological constant (or suitable inflationary potenti...

  16. Molecular anisotropic magnetoresistance

    OpenAIRE

    Otte, Fabian; Heinze, Stefan; Mokrousov, Yuriy

    2015-01-01

    Using density functional theory calculations, we demonstrate that the effect of anisotropic magnetoresistance (AMR) can be enhanced by orders of magnitude with respect to conventional bulk ferromagnets in junctions containing molecules sandwiched between ferromagnetic leads. We study ballistic transport in metal-benzene complexes contacted by $3d$ transition-metal wires. We show that the gigantic AMR can arise from spin-orbit coupling effects in the leads, drastically enhanced by orbital-symm...

  17. MOCVD grown hexagonal BN epilayers for DUV photonics

    Science.gov (United States)

    Majety, Sashikanth; Li, Jing; Lin, Jingyu; Jiang, Hongxing

    2013-03-01

    Hexagonal boron nitride (hBN) has attracted a lot of interest recently owing to its excellent physical properties and its potential use as a template in graphene electronics. We report on the successful growth of hBN epilayers using metal organic chemical vapor deposition (MOCVD) on sapphire and n-AlGaN substrates. P-type conductivity control was also achieved by in-situ Mg doping. This provides us with an opportunity to solve the problem of low quantum efficiency of DUV devices using Al-rich AlGaN alloys due to their extremely low p-type conductivity. Mg doped hBN epilayers grown on insulating templates were p-type with an in-plane resistivity of 2.3 Ω cm. Diode behavior in the p-n structures of p-hBN/n-Al0.62Ga0.38N has been demonstrated. Our results indicate that hBN epilayers have potential for DUV optoelectronic devices and also demonstrate the feasibility of using highly conductive p-type hBN as electron blocking and p-contact layers for AlGaN based deep UV emitters. This work is supported by DOE.

  18. Closeout of Advanced Boron and Metal Loaded High Porosity Carbons.

    Energy Technology Data Exchange (ETDEWEB)

    Peter C. Eklund (deceased); T. C. Mike Chung; Henry C. Foley; Vincent H. Crespi

    2011-05-01

    The Penn State effort explored the development of new high-surface-area materials for hydrogen storage, materials that could offer enhancement in the hydrogen binding energy through a direct chemical modification of the framework in high specific-surface-area platforms. The team chemically substituted boron into the hexagonal sp2 carbon framework, dispersed metal atoms bound to the boro-carbon structure, and generated the theory of novel nanoscale geometries that can enhance storage through chemical frustration, sheet curvature, electron deficiency, large local fields and mixed hybridization states. New boro-carbon materials were synthesized by high temperature plasma, pyrolysis of boron-carbon precursor molecules, and post-synthesis modification of carbons. Hydrogen uptake has been assessed, and several promising leads have been identified, with the requirement to simultaneously optimize total surface area while maintaining the enhanced hydrogen binding energies already demonstrated.

  19. Single crystalline boron carbide nanobelts:synthesis and characterization

    Institute of Scientific and Technical Information of China (English)

    Bao Li-Hong; Li Chen; Tian Yuan; Tian Ji-Fa; Hui Chao; Wang Xing-Jun; Shen Cheng-Min; Gao Hong-Jun

    2008-01-01

    This paper reports that the large-scale single crystalline boron carbide nanobelts have been fabricated through a simple carbothermal reduction method with B/B203/C/Fe powder as precursors at ll00~C.Transmission electron microscopy and selected area electron diffraction characterizations show that the boron carbide nanobelt has a B4C rhomb-centred hexagonal structure with good crystallization.Electron energy loss spectroscopy analysis indicates that the nanobelt contains only B and C,and the atomic ratio of B to C is close to 4:1.High resolution transmission electron microscopy results show that the preferential growth direction of the nanobelt is [101].A possible growth mechanism is also discussed.

  20. Tuning the optical response in carbon doped boron nitride nanodots

    KAUST Repository

    Mokkath, Junais Habeeb

    2014-09-04

    Time dependent density functional theory and the hybrid B3LYP functional are used to investigate the structural and optical properties of pristine and carbon doped hexagonal boron nitride nanodots. In agreement with recent experiments, the embedded carbon atoms are found to favor nucleation. Our results demonstrate that carbon clusters of different shapes promote an early onset of absorption by generating in-gap states. The nanodots are interesting for opto-electronics due to their tunable optical response in a wide energy window. We identify cluster sizes and shapes with optimal conversion efficiency for solar radiation and a wide absorption range form infrared to ultraviolet. This journal is

  1. RF plasma reactive pulsed laser deposition of boron nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Mitu, B. [CNR-IMIP/PZ Zona Industriale di Tito Scalo, I - 85050 Tito Scalo (PZ) (Italy)]. E-mail: mitub@alpha1.infim.ro; Bilkova, P. [CNR-IMIP/PZ Zona Industriale di Tito Scalo, I - 85050 Tito Scalo (PZ) (Italy)]. E-mail: bilkova.petra@tiscali.cz; Marotta, V. [CNR-IMIP/PZ Zona Industriale di Tito Scalo, I - 85050 Tito Scalo (PZ) (Italy); Orlando, S. [CNR-IMIP/PZ Zona Industriale di Tito Scalo, I - 85050 Tito Scalo (PZ) (Italy)]. E-mail: orlando@imip.pz.cnr.it; Santagata, A. [CNR-IMIP/PZ Zona Industriale di Tito Scalo, I - 85050 Tito Scalo (PZ) (Italy)

    2005-07-15

    Thin films of boron nitride (BN) have been deposited on Si(1 0 0) substrates by reactive pulsed laser ablation (PLA) of a boron target in the presence of a 13.56 MHz radio frequency (RF) nitrogen plasma. The gaseous species have been deposited at several substrate temperatures, using the on-axis configuration. The film properties have been investigated by Scanning Electron Microscopy, Atomic Force Microscopy, Fourier Transformed Infrared Spectroscopy, and X-ray diffraction characterization techniques, and compared to those resulting from the conventional PLA method. The behavior of hexagonal-BN and cubic-BN phases grown by PLA as function of substrate temperature is also reported.

  2. Preparation and characterization of sputtered boron nitride and boron carbide films and their modification by ion implantation

    International Nuclear Information System (INIS)

    Nanocrystalline cubic boron nitride and boron carbide films have been synthesized using sputtering. The relationship between the structures and properties as well as the influence of the deposition parameters, such as rf power, bias voltage, substrate temperature, composition and flow rate of the sputtering gas, on the structures and properties have been studied. The influence of the ion bombardment could be described by the specific ion momentum P*=[ion momentum.(ion flux/atom flux)]. The specific ion momentum was found to be proportional to the rf power and to the 1.5th power of the bias voltage. Two phases have been identified in our boron nitride films: hexagonal boron nitride (h-BN) and cubic boron nitride (c-BN); the films were either single phase or contained a mixture of these two phases. Nanocrystalline boron films have been grown with a deposition rate of 2 nm/s not only on Si but also on hard metal (WC-6%Co) substrates. Stoichiometric and crystalline films have already been grown at room temperature (about 0.1 Tm, Tm=melting point-3900 K). All the films contained about 8 at% carbon and 6 at% oxygen as impurities, which come mainly from the targt. The concentration of the impurities is independent of the deposition paramters. The growth of c-BN appears after the specific ion momentum larger than a threshold value, which is dependent on the substrate temperature, composition and on the flow rate of the sputtering gas. The volume content of c-BN runs through a maximum value with increasing specific ion momentum. (orig.)

  3. Boronated liposome development and evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Hawthorne, M.F. [Univ. of California, Los Angeles, CA (United States)

    1995-11-01

    The boronated liposome development and evaluation effort consists of two separate tasks. The first is the development of new boron compounds and the synthesis of known boron species with BNCT potential. These compounds are then encapsulated within liposomes for the second task, biodistribution testing in tumor-bearing mice, which examines the potential for the liposomes and their contents to concentrate boron in cancerous tissues.

  4. Model anisotropic quantum Hall states

    OpenAIRE

    Qiu, R. -Z.; Haldane, F.D.M.; Wan, Xin; Yang, Kun; Yi, Su

    2012-01-01

    Model quantum Hall states including Laughlin, Moore-Read and Read-Rezayi states are generalized into appropriate anisotropic form. The generalized states are exact zero-energy eigenstates of corresponding anisotropic two- or multi-body Hamiltonians, and explicitly illustrate the existence of geometric degrees of in the fractional quantum Hall effect. These generalized model quantum Hall states can provide a good description of the quantum Hall system with anisotropic interactions. Some numeri...

  5. On plastic flow in notched hexagonal close packed single crystals

    Science.gov (United States)

    Selvarajou, Balaji; Kondori, Babak; Benzerga, A. Amine; Joshi, Shailendra P.

    2016-09-01

    The micromechanics of anisotropic plastic flow by combined slip and twinning is investigated computationally in single crystal notched specimens. Constitutive relations for hexagonal close packed materials are used which take into account elastic anisotropy, thirty potential deformation systems, various hardening mechanisms and rate-sensitivity. The specimens are loaded perpendicular to the c-axis but the presence of a notch generates three-dimensional triaxial stress states. The study is motivated by recent experiments on a polycrystalline magnesium alloy. To enable comparisons with these where appropriate, three sets of activation thresholds for the various deformation systems are used. For the conditions that most closely mimic the alloy material, attention is focused on the relative roles of pyramidal and prismatic slip, as well as on the emergence of {1012bar}[101bar1] extension twinning at sufficiently high triaxiality. In all cases, the spatial variations of stress triaxiality and plastic strain, inclusive of various system activities, are quantified along with their evolution upon straining. The implications of these findings in fundamental understanding of ductile failure of HCP alloys in general and Mg alloys in particular are discussed.

  6. Material Induced Anisotropic Damage in DP600

    NARCIS (Netherlands)

    Niazi, M.S.; Wisselink, H.H.; Meinders, V.T.; Boogaard, van den A.H.

    2013-01-01

    Plasticity induced damage development in metals is anisotropic by nature. The anisotropy in damage is driven by two different phenomena; anisotropic deformation state i.e. Load Induced Anisotropic Damage (LIAD) and anisotropic microstructure i.e. Material Induced Anisotropic Damage (MIAD). The contr

  7. On the Relativistic anisotropic configurations

    CERN Document Server

    Shojai, F; Stepanian, A

    2016-01-01

    In this paper we study anisotropic spherical polytropes within the framework of general relativity. Using the anisotropic Tolman-Oppenheimer-Volkov (TOV) equations, we explore the relativistic anisotropic Lane-Emden equations. We find how the anisotropic pressure affects the boundary conditions of these equations. Also we argue that the behaviour of physical quantities near the center of star changes in the presence of anisotropy. For constant density, a class of exact solution is derived with the aid of a new ansatz and its physical properties are discussed.

  8. On the relativistic anisotropic configurations

    Energy Technology Data Exchange (ETDEWEB)

    Shojai, F. [University of Tehran, Department of Physics, Tehran (Iran, Islamic Republic of); Institute for Research in Fundamental Sciences (IPM), Foundations of Physics Group, School of Physics, Tehran (Iran, Islamic Republic of); Kohandel, M. [Alzahra University, Department of Physics and Chemistry, Tehran (Iran, Islamic Republic of); Stepanian, A. [University of Tehran, Department of Physics, Tehran (Iran, Islamic Republic of)

    2016-06-15

    In this paper we study anisotropic spherical polytropes within the framework of general relativity. Using the anisotropic Tolman-Oppenheimer-Volkov equations, we explore the relativistic anisotropic Lane-Emden equations. We find how the anisotropic pressure affects the boundary conditions of these equations. Also we argue that the behavior of physical quantities near the center of star changes in the presence of anisotropy. For constant density, a class of exact solution is derived with the aid of a new ansatz and its physical properties are discussed. (orig.)

  9. Basic Functionalization of Hexagonal Mesoporous Silica

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    3-Aminopropyltricthoxysilanc (AM), 3-cthyldiaminopropyltrimcthoxysilane (ED) and 3-piperazinylpropyltriethoxysilanc (PZ), were used to chemically couple with the silanol groups of calcined hexagonal and hexagonal-like mesoporous silica SBA-3 and HMS, respectively, to produce functionalised alkaline mesoporous materials. The inerease in the dosage of organosilanes, or in reaction temperature, or in the humidity (i.e., water content) of support, is favorable to the grafting of functional molecules on the surface. When functionalization conditions are the same, the order of loadings on SBA-3 and DDA-HMS is ED>AM>PZ. However, on ODA-HMS, the loading of AM is similar to that of ED.

  10. Hyperbolic phonon-polaritons in boron nitride for near-field optical imaging and focusing

    Science.gov (United States)

    Li, Peining; Lewin, Martin; Kretinin, Andrey V.; Caldwell, Joshua D.; Novoselov, Kostya S.; Taniguchi, Takashi; Watanabe, Kenji; Gaussmann, Fabian; Taubner, Thomas

    2015-06-01

    Hyperbolic materials exhibit sub-diffractional, highly directional, volume-confined polariton modes. Here we report that hyperbolic phonon polaritons allow for a flat slab of hexagonal boron nitride to enable exciting near-field optical applications, including unusual imaging phenomenon (such as an enlarged reconstruction of investigated objects) and sub-diffractional focusing. Both the enlarged imaging and the super-resolution focusing are explained based on the volume-confined, wavelength dependent propagation angle of hyperbolic phonon polaritons. With advanced infrared nanoimaging techniques and state-of-art mid-infrared laser sources, we have succeeded in demonstrating and visualizing these unexpected phenomena in both Type I and Type II hyperbolic conditions, with both occurring naturally within hexagonal boron nitride. These efforts have provided a full and intuitive physical picture for the understanding of the role of hyperbolic phonon polaritons in near-field optical imaging, guiding, and focusing applications.

  11. Theoretical investigation of the electronic structures and carrier transport of hybrid graphene and boron nitride nanostructure

    Directory of Open Access Journals (Sweden)

    Jia-Tao Sun

    2012-09-01

    graphene and hexagonal boron nitride (C-BN nanostructures receive much research interest due to the complementary electronic properties. Graphene is a zero-gap semiconductor, while hexagonal boron nitride (h-BN is a wide gap semiconductor. Here we studied the electronic structures and carrier transport of hybrid C-BN nanostructures by using first principles calculations and deformation potential theory. We have found that the physical quantities in these systems under study, band gap, effective mass, deformation potential, and carrier mobility, can be categorised into three different families depending on the width of graphene nanoribbon. This family behavior is similar to pristine armchair graphene nanoribbon, but with slight difference from the individual component. New opportunities of designing nanoelectric devices are discussed by utilizing the quantum confinement effect based on such kind of hybrid nanostructures.

  12. Anisotropically Inflating Universes

    CERN Document Server

    Barrow, J D; Barrow, John D.; Hervik, Sigbjorn

    2008-01-01

    We show that in theories of gravity that add quadratic curvature invariants to the Einstein-Hilbert action there exist expanding vacuum cosmologies with positive cosmological constant which do not approach the de Sitter universe. Exact solutions are found which inflate anisotropically. This behaviour is driven by the Ricci curvature invariant and has no counterpart in the general relativistic limit. These examples show that the cosmic no-hair theorem does not hold in these higher-order extensions of general relativity and raises new questions about the ubiquity of inflation in the very early universe and the thermodynamics of gravitational fields.

  13. Anisotropic Stars Exact Solutions

    CERN Document Server

    Dev, K; Dev, Krsna; Gleiser, Marcelo

    2000-01-01

    We study the effects of anisotropic pressure on the properties of spherically symmetric, gravitationally bound objects. We consider the full general relativistic treatment of this problem and obtain exact solutions for various form of equations of state connecting the radial and tangential pressures. It is shown that pressure anisotropy can have significant effects on the structure and properties of stellar objects. In particular, the maximum value of 2M/R can approach unity (2M/R < 8/9 for isotropic objects) and the surface redshift can be arbitrarily large.

  14. Edge Chemistry Effects on the Structural, Electronic, and Electric Response Properties of Boron Nitride Quantum Dots

    OpenAIRE

    Krepel, Dana; Kalikhman-Razvozov, Lena; Hod, Oded

    2014-01-01

    The effects of edge hydrogenation and hydroxylation on the relative stability and electronic properties of hexagonal boron nitride quantum dots (h-BNQDs) are investigated. Zigzag edge hydroxylation is found to result in considerable energetic stabilization of h-BNQDs as well as a reduction of their electronic gap with respect to their hydrogenated counterparts. The application of an external in-plane electric field leads to a monotonous decrease of the gap. When compared to their edge-hydroge...

  15. Hyperbolic phonon-polaritons in boron nitride for near-field optical imaging and focusing

    OpenAIRE

    Li, Peining; Lewin, Martin; Kretinin, Andrey V.; Caldwell, Joshua D.; Novoselov, Kostya S.; Taniguchi, Takashi; Watanabe, Kenji; Gaussmann, Fabian; Taubner, Thomas

    2015-01-01

    Hyperbolic materials exhibit sub-diffractional, highly directional, volume-confined polariton modes. Here we report that hyperbolic phonon polaritons allow for a flat slab of hexagonal boron nitride to enable exciting near-field optical applications, including unusual imaging phenomenon (such as an enlarged reconstruction of investigated objects) and sub-diffractional focusing. Both the enlarged imaging and the super-resolution focusing are explained based on the volume-confined, wavelength d...

  16. Picosecond laser structuration under high pressures: observation of boron nitride nanorods

    OpenAIRE

    Museur, L.; Petitet, J. P.; Michel, J.P.; Marine, V.; Anglos, D.; Fotakis, C.; Kanaev, A.V.

    2008-01-01

    We report on picosecond UV-laser processing of hexagonal boron nitride (hBN) at moderately high pressures above 500 bar. The main effect is specific to the ambient gas and laser pulse duration in the ablation regime: when samples are irradiated by 5 ps or 0.45 ps laser pulses in nitrogen gas environment, multiple nucleation of a new crystalline product - BN nanorods - takes place. This process is triggered on structural defects, which number density strongly decreases upon recrystallization. ...

  17. Moire superlattice effects in graphene/boron-nitride van der Waals heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wallbank, John R.; Chen, Xi; Fal' ko, Vladimir I. [Department of Physics, Lancaster University, Lancaster (United Kingdom); Mucha-Kruczynski, Marcin [Department of Physics, University of Bath (United Kingdom)

    2015-06-15

    Van der Waals heterostructures of graphene and hexagonal boron nitride feature a moire superlattice for graphene's Dirac electrons. Here, we review the effects generated by this superlattice, including a specific miniband structure featuring gaps and secondary Dirac points, and a fractal spectrum of magnetic minibands known as Hofstadter's butterfly. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Anisotropic Thermal Diffusion

    Science.gov (United States)

    Gardiner, Thomas

    2013-10-01

    Anisotropic thermal diffusion in magnetized plasmas is an important physical phenomena for a diverse set of physical conditions ranging from astrophysical plasmas to MFE and ICF. Yet numerically simulating this phenomenon accurately poses significant challenges when the computational mesh is misaligned with respect to the magnetic field. Particularly when the temperature gradients are unresolved, one frequently finds entropy violating solutions with heat flowing from cold to hot zones for χ∥ /χ⊥ >=102 which is substantially smaller than the range of interest which can reach 1010 or higher. In this talk we present a new implicit algorithm for solving the anisotropic thermal diffusion equations and demonstrate its characteristics on what has become a fairly standard set of test problems in the literature. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. SAND2013-5687A.

  19. Inhomogeneous anisotropic cosmology

    Science.gov (United States)

    Kleban, Matthew; Senatore, Leonardo

    2016-10-01

    In homogeneous and isotropic Friedmann-Robertson-Walker cosmology, the topology of the universe determines its ultimate fate. If the Weak Energy Condition is satisfied, open and flat universes must expand forever, while closed cosmologies can recollapse to a Big Crunch. A similar statement holds for homogeneous but anisotropic (Bianchi) universes. Here, we prove that arbitrarily inhomogeneous and anisotropic cosmologies with ``flat'' (including toroidal) and ``open'' (including compact hyperbolic) spatial topology that are initially expanding must continue to expand forever at least in some region at a rate bounded from below by a positive number, despite the presence of arbitrarily large density fluctuations and/or the formation of black holes. Because the set of 3-manifold topologies is countable, a single integer determines the ultimate fate of the universe, and, in a specific sense, most 3-manifolds are ``flat'' or ``open''. Our result has important implications for inflation: if there is a positive cosmological constant (or suitable inflationary potential) and initial conditions for the inflaton, cosmologies with ``flat'' or ``open'' topology must expand forever in some region at least as fast as de Sitter space, and are therefore very likely to begin inflationary expansion eventually, regardless of the scale of the inflationary energy or the spectrum and amplitude of initial inhomogeneities and gravitational waves. Our result is also significant for numerical general relativity, which often makes use of periodic (toroidal) boundary conditions.

  20. Anisotropic Surface State Mediated RKKY Interaction Between Adatoms on a Hexagonal Lattice

    Science.gov (United States)

    Einstein, Theodore; Patrone, Paul

    2012-02-01

    Motivated by recent numerical studies of Ag on Pt(111), we derive a far-field expression for the RKKY interaction mediated by surface states on a (111) FCC surface, considering the effect of anisotropy in the Fermi edge. The main contribution to the interaction comes from electrons whose Fermi velocity vF is parallel to the vector R connecting the interacting adatoms; we show that in general, the corresponding Fermi wave-vector kF is not parallel to R. The interaction is oscillatory; the amplitude and wavelength of oscillations have angular dependence arising from the anisotropy of the surface state band structure. The wavelength, in particular, is determined by the component of the aforementioned kF that is parallel to R. Our analysis is easily generalized to other systems. For Ag on Pt(111), our results indicate that the RKKY interaction between pairs of adatoms should be nearly isotropic and so cannot account for the anisotropy found in the studies motivating our work.

  1. Anisotropic surface-state-mediated RKKY interaction between adatoms on a hexagonal lattice

    Science.gov (United States)

    Patrone, Paul N.; Einstein, T. L.

    2012-01-01

    Motivated by recent numerical studies of Ag on Pt(111), we derive an expression for the RKKY interaction mediated by surface states, considering the effect of anisotropy in the Fermi edge. Our analysis is based on a stationary phase approximation. The main contribution to the interaction comes from electrons whose Fermi velocity vF is parallel to the vector R connecting the interacting adatoms; we show that, in general, the corresponding Fermi wave vector kF is not parallel to R. The interaction is oscillatory; the amplitude and wavelength of oscillations have angular dependence arising from the anisotropy of the surface-state band structure. The wavelength, in particular, is determined by the projection of this kF (corresponding to vF) onto the direction of R. Our analysis is easily generalized to other systems. For Ag on Pt(111), our results indicate that the RKKY interaction between pairs of adatoms should be nearly isotropic and so cannot account for the anisotropy found in the studies motivating our work. However, for metals with surface-state dispersions similar to Be(101¯0), we show that the RKKY interaction should have considerable anisotropy.

  2. Ultraviolet dielectric hyperlens with layered graphene and boron nitride

    CERN Document Server

    Wang, Junxia; Zhang, Baile

    2012-01-01

    The concept of hyperlens, as a novel transformation optics device, is a promising real-time super-resolution lens that can effectively transform evanescent waves into propagating waves and thus break the diffraction limit. However, previous hyperlens implementations usually adopted metal which would absorb most energy during light transmission and thus deteriorate imaging efficiency. Here we propose a novel hyperlens design based on dielectric layered graphene and h-boron nitride (h-BN) whose performance can surpass the counterpart design with metal. Our first-principle and Kramers-Kronig relation calculation shows that both layered graphene and layered h-BN exhibit strong anisotropic properties in ultraviolet spectrum regions, where their permittivity components perpendicular to the optic axis can be negative while the components parallel to the optic axis can be positive. Based on the anisotropic properties, flat and cylindrical hyperlenses are designed and numerically verified with layered graphene at 1200...

  3. Bright prospects for boron

    NARCIS (Netherlands)

    Wassink, J.

    2012-01-01

    Professor Lis Nanver at Dimes has laid the foundation for a range of new photodetectors by creating a thin coating of boron on a silicon substrate. The sensors are used in ASML’s latest lithography machines and FEI’s most sensitive electron microscopes.

  4. Boron contamination in drinking - irrigation water and boron removal methods

    Directory of Open Access Journals (Sweden)

    Meltem Bilici Başkan

    2014-03-01

    Full Text Available Boron presents in IIIA group of periodic table and has high ionization capacity. Therefore it is classified as a metalloid. Average boron concentration in earth's crust is 10 mg/kg. It presents in the environment as a salts of Ca, Na, and Mg. Boron reserves having high concentration and economical extent are found mostly in Turkey and in arid, volcanic and high hydrothermal activity regions of U.S. as compounds of boron attached to oxygen. Boron is an essential micronutrient for plants, although it may be toxic at higher levels. The range in which it is converted from a nutrient to a contaminant is quite narrow. Boron presents in water environment as a boric acid and rarely borate salts. The main boron sources, whose presence is detected in surface waters, are urban wastes and industrial wastes, which can come from a wide range of different activities as well as several chemical products used in agriculture. In Turkey, the most pollutant toxic element in drinking and irrigation water is boron. Therefore boron removal is very important in terms of human health and agricultural products in high quality. Mainly boron removal methods from drinking water and irrigation water are ion exchange, ultrafiltration, reverse osmosis, and adsorption.

  5. Plasma boron and the effects of boron supplementation in males.

    Science.gov (United States)

    Green, N R; Ferrando, A A

    1994-11-01

    Recently, a proliferation of athletic supplements has been marketed touting boron as an ergogenic aid capable of increasing testosterone. The effect of boron supplementation was investigated in male bodybuilders. Ten male bodybuilders (aged 20 to 26) were given a 2.5-mg boron supplement, while nine male bodybuilders (aged 21 to 27) were given a placebo for 7 weeks. Plasma total and free testosterone, plasma boron, lean body mass, and strength measurements were determined on day 1 and day 49 of the study. A microwave digestion procedure followed by inductively coupled argon plasma spectroscopy was used for boron determination. Twelve subjects had boron values at or above the detection limit with median value of 25 ng/ml (16 ng/ml lower quartile and 33 ng/ml upper quartile). Of the ten subjects receiving boron supplements, six had an increase in their plasma boron. Analysis of variance indicated no significant effect of boron supplementation on any of the other dependent variables. Both groups demonstrated significant increases in total testosterone (p bodybuilding can increase total testosterone, lean body mass, and strength in lesser-trained bodybuilders, but boron supplementation affects these variables not at all.

  6. Methods of producing continuous boron carbide fibers

    Energy Technology Data Exchange (ETDEWEB)

    Garnier, John E.; Griffith, George W.

    2015-12-01

    Methods of producing continuous boron carbide fibers. The method comprises reacting a continuous carbon fiber material and a boron oxide gas within a temperature range of from approximately 1400.degree. C. to approximately 2200.degree. C. Continuous boron carbide fibers, continuous fibers comprising boron carbide, and articles including at least a boron carbide coating are also disclosed.

  7. Thermodynamics of anisotropic branes

    CERN Document Server

    Ávila, Daniel; Patiño, Leonardo; Trancanelli, Diego

    2016-01-01

    We study the thermodynamics of flavor D7-branes embedded in an anisotropic black brane solution of type IIB supergravity. The flavor branes undergo a phase transition between a `Minkowski embedding', in which they lie outside of the horizon, and a `black hole embedding', in which they fall into the horizon. This transition depends on two independent dimensionless ratios, which are formed out of the black hole temperature, its anisotropy parameter, and the mass of the flavor degrees of freedom. It happens either at a critical temperature or at a critical anisotropy. A general lesson we learn from this analysis is that the anisotropy, in this particular realization, induces similar effects as the temperature. In particular, increasing the anisotropy bends the branes more and more into the horizon. Moreover, we observe that the transition becomes smoother for higher anisotropies.

  8. Averaging anisotropic cosmologies

    CERN Document Server

    Barrow, J D; Barrow, John D.; Tsagas, Christos G.

    2006-01-01

    We examine the effects of spatial inhomogeneities on irrotational anisotropic cosmologies by looking at the average properties of pressure-free Bianchi-type models. Adopting the Buchert averaging scheme, we identify the kinematic backreaction effects by focussing on spacetimes with zero or isotropic spatial curvature. This allows us to close the system of the standard scalar formulae with a propagation equation for the shear magnitude. We find no change in the already known conditions for accelerated expansion. The backreaction terms are expressed as algebraic relations between the mean-square fluctuations of the models' irreducible kinematical variables. Based on these we investigate the early evolution of averaged vacuum Bianchi type $I$ universes and those filled with pressureless matter. In the latter case we show that the backreaction effects can modify the familiar Kasner-like singularity and potentially remove Mixmaster-type oscillations. We also discuss the possibility of accelerated expansion due to ...

  9. Anisotropic Model Colloids

    Science.gov (United States)

    van Kats, C. M.

    2008-10-01

    The driving forces for fundamental research in colloid science are the ability to manage the material properties of colloids and to unravel the forces that play a role between colloids to be able to control and understand the processes where colloids play an important role. Therefore we are searching for colloidal materials with specific physical properties to better understand our surrounding world.Until recently research in colloid science was mainly focused on spherical (isotropic) particles. Monodisperse spherical colloids serve as a model system as they exhibit similar phase behaviour as molecular and atomic systems. Nevertheless, in many cases the spherical shape is not sufficient to reach the desired research goals. Recently the more complex synthesis methods of anisotropic model colloids has strongly developed. This thesis should be regarded as a contribution to this research area. Anisotropic colloids can be used as a building block for complex structures and are expected not only to lead to the construction of full photonic band gap materials. They will also serve as new, more realistic, models systems for their molecular analogues. Therefore the term ‘molecular colloids” is sometimes used to qualify these anisotropic colloidal particles. In the introduction of this thesis, we give an overview of the main synthesis techniques for anisotropic colloids. Chapter 2 describes the method of etching silicon wafers to construct monodisperse silicon rods. They subsequently were oxidized and labeled (coated) with a fluorescent silica layer. The first explorative phase behaviour of these silica rods was studied. The particles showed a nematic ordering in charge stabilized suspensions. Chapter 3 describes the synthesis of colloidal gold rods and the (mesoporous) silica coating of gold rods. Chapter 4 describes the physical and optical properties of these particles when thermal energy is added. This is compared to the case where the particles are irradiated with

  10. Hexagonal-Rod Growth Mechanism and Kinetics of the Primary Cu6Sn5 Phase in Liquid Sn-Based Solder

    Science.gov (United States)

    Zhang, Z. H.; Cao, H. J.; Yang, H. F.; Li, M. Y.; Yu, Y. X.

    2016-11-01

    A hexagonal-rod growth mechanism is proposed to describe the growth behavior of the primary Cu6Sn5 phase in liquid Sn-based solder. After Sn-6.5 at.%Cu solder had been maintained at 250°C for 10 h, a large number of hexagonal-rod-type Cu6Sn5 grains were found to have separated within it. Our observations show that these hexagonal rods had side facets in the { 10overline{1} 0}_{η } family and round ends close to the {0002}η family. Moreover, the nucleation of the hexagonal rods was studied, and the corresponding growth kinetics found to be governed by a Cu-supply-controlled mechanism rather than an interfacial-reaction-controlled or Cu-diffusion-limited mechanism. More importantly, the anisotropic growth of the Cu6Sn5 phase was confirmed to be the dominant reason for production of these primary hexagonal rods with high aspect ratio. This may represent an avenue for synthesis of nanosized Cu6Sn5 single crystals for use as anode materials in lithium-ion batteries. Additionally, our Cu6Sn5 hexagonal-rod growth mechanism may provide insight into morphological and kinetic studies on interfacial Cu6Sn5 grains and similar intermetallics.

  11. Oxidation of Silicon and Boron in Boron Containing Molten Iron

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A new process of directly smelting boron steel from boron-containing pig iron has been established. The starting material boron-containing pig iron was obtained from ludwigite ore, which is very abundant in the eastern area of Liaoning Province of China. The experiment was performed in a medium-frequency induction furnace, and Fe2O3 powder was used as the oxidizing agent. The effects of temperature, addition of Fe2O3, basicity, stirring, and composition of melt on the oxidation of silicon and boron were investigated respectively. The results showed that silicon and boron were oxidized simultaneously and their oxidation ratio exceeded 90% at 1 400 ℃. The favorable oxidation temperature of silicon was about 1 300-1 350 C. High oxygen potential of slag and strong stirring enhanced the oxidation of silicon and boron.

  12. Approximate study of the free vibrations of a cantilever anisotropic plate carrying a concentrated mass

    Science.gov (United States)

    Ciancio, P. M.; Rossit, C. A.; Laura, P. A. A.

    2007-05-01

    This study is concerned with the vibration analysis of a cantilevered rectangular anisotropic plate when a concentrated mass is rigidly attached to its center point. Based on the classical theory of anisotropic plates, the Ritz method is employed to perform the analysis. The deflection of the plate is approximated by a set of beam functions in each principal coordinate direction. The influence of the mass magnitude on the natural frequencies and modal shapes of vibration is studied for a boron-epoxy plate and also in the case of a generic anisotropic material. The classical Ritz method with beam functions as the spatial approximation proved to be a suitable procedure to solve a problem of this analytical complexity.

  13. Anisotropic Inflation with General Potentials

    CERN Document Server

    Shi, Jiaming; Qiu, Taotao

    2015-01-01

    Anomalies in recent observational data indicate that there might be some "anisotropic hair" generated in an inflation period. To obtain general information about the effects of this anisotropic hair to inflation models, we studied anisotropic inflation models that involve one vector and one scalar using several types of potentials. We determined the general relationship between the degree of anisotropy and the fraction of the vector and scalar fields, and concluded that the anisotropies behave independently of the potentials. We also generalized our study to the case of multi-directional anisotropies.

  14. Discrete breathers in hexagonal dusty plasma lattices.

    Science.gov (United States)

    Koukouloyannis, V; Kourakis, I

    2009-08-01

    The occurrence of single-site or multisite localized vibrational modes, also called discrete breathers, in two-dimensional hexagonal dusty plasma lattices is investigated. The system is described by a Klein-Gordon hexagonal lattice characterized by a negative coupling parameter epsilon in account of its inverse dispersive behavior. A theoretical analysis is performed in order to establish the possibility of existence of single as well as three-site discrete breathers in such systems. The study is complemented by a numerical investigation based on experimentally provided potential forms. This investigation shows that a dusty plasma lattice can support single-site discrete breathers, while three-site in phase breathers could exist if specific conditions, about the intergrain interaction strength, would hold. On the other hand, out of phase and vortex three-site breathers cannot be supported since they are highly unstable.

  15. Structures, stability, mechanical and electronic properties of α-boron and α*-boron

    OpenAIRE

    Chaoyu He; Zhong, J. X.

    2013-01-01

    The structures, stability, mechanical and electronic properties of α-boron and a promising metastable boron phase (α*-boron) have been studied by first-principles calculations. α-boron and α*-boron consist of equivalent icosahedra B12 clusters in different connecting configurations of “3S-6D-3S” and “2S-6D-4S”, respectively. The total energy calculations show that α*-boron is less stable than α-boron but more favorable than the well-known β-boron and γ-boron at zero pressure. Both α-boron and...

  16. Experimental investigations of hexagonal crimping die failure

    Directory of Open Access Journals (Sweden)

    Veera kumar M

    2016-06-01

    Full Text Available This paper deals with the hexagonal crimping die failure of high carbon high chromium steel material. The failure modes were initially revealed and identified by the visual examination. Then the chemical analysis and metallographic examination havebeen carried at different positions of the failure die surface using scanning electron microscope (SEM. The microstructure evaluation reveals that failure occurs due to undissolved austenitic structure resulting in improper transition duringheat treatment.

  17. Layered graphene structure of a hexagonal carbon

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Bin, E-mail: beenchang@nuaa.edu.cn

    2013-06-01

    Experiments show that there is a novel hexagonal carbon polymorph restricted to the space group of P-62c, but the detailed atomic structure is not determined. Here we set carbon atoms occupying P-62c 4f or P-62c 2c and 2d Wyckoff positions, and calculate the total energy of the different cell structures changing the internal parameter by first-principles calculations, which demonstrates that the stable structures in energy (at local minima) are hexagonal carbon (P-62c 2c and 2d) and hexagonal diamond (P-62c 4f, z=1/16). The calculated bulk modulus 437±16 GPa and interlayer distance 2.062 Å of the layered graphene structure P-62c 2c and 2d are in good agreement with those of the proposed new carbon, which indicates that P-62c 2c and 2d is a possible precursor or intermediate hard phase during the structural transformation of carbon.

  18. Layered graphene structure of a hexagonal carbon

    International Nuclear Information System (INIS)

    Experiments show that there is a novel hexagonal carbon polymorph restricted to the space group of P-62c, but the detailed atomic structure is not determined. Here we set carbon atoms occupying P-62c 4f or P-62c 2c and 2d Wyckoff positions, and calculate the total energy of the different cell structures changing the internal parameter by first-principles calculations, which demonstrates that the stable structures in energy (at local minima) are hexagonal carbon (P-62c 2c and 2d) and hexagonal diamond (P-62c 4f, z=1/16). The calculated bulk modulus 437±16 GPa and interlayer distance 2.062 Å of the layered graphene structure P-62c 2c and 2d are in good agreement with those of the proposed new carbon, which indicates that P-62c 2c and 2d is a possible precursor or intermediate hard phase during the structural transformation of carbon

  19. Boron-Based Layered Structures for Energy Storage

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Y.; Wei, S. H.

    2012-01-01

    Based on Density Functional Theory simulations, we have studied the boron-based graphite-like materials, i.e., LiBC and MgB2 for energy storage. First, when half of the Li-ions in the LiBC are removed, the BC layered structure is still preserved. The Li intercalation potential (equilibrium lithium-insertion voltage of 2.3-2.4 V relative to lithium metal) is significantly higher than that in graphite, allowing Li0.5BC to function as a cathode material. The reversible electrochemical reaction, LiBC = Li0.5BC + 0.5Li, enables a specific energy density of 1088 Wh/kg and a volumetric energy density of 2463 Wh/L. Second, 75% of the Mg ions in MgB2 can be removed and reversibly inserted with the layered boron structures being preserved through an in-plane topological transformation between the hexagonal lattice domains and triangular domains. The mechanism of such a charge-driven transformation originates from the versatile valence state of boron in its planar form.

  20. Photon states in anisotropic media

    Indian Academy of Sciences (India)

    Deepak Kumar

    2002-08-01

    Quantum aspects of optical polarization are discussed for waves traveling in anisotropic dielectric media with a view to relate the dynamics of polarization with that of photon spin and its manipulation by classical polarizers.

  1. Gradient expansion for anisotropic hydrodynamics

    CERN Document Server

    Florkowski, Wojciech; Spaliński, Michał

    2016-01-01

    We compute the gradient expansion for anisotropic hydrodynamics. The results are compared with the corresponding expansion of the underlying kinetic-theory model with the collision term treated in the relaxation time approximation. We find that a recent formulation of anisotropic hydrodynamics based on an anisotropic matching principle yields the first three terms of the gradient expansion in agreement with those obtained for the kinetic theory. This gives further support for this particular hydrodynamic model as a good approximation of the kinetic-theory approach. We further find that the gradient expansion of anisotropic hydrodynamics is an asymptotic series, and the singularities of the analytic continuation of its Borel transform indicate the presence of non-hydrodynamic modes.

  2. Fivefold twinned boron carbide nanowires.

    Science.gov (United States)

    Fu, Xin; Jiang, Jun; Liu, Chao; Yuan, Jun

    2009-09-01

    Chemical composition and crystal structure of fivefold twinned boron carbide nanowires have been determined by electron energy-loss spectroscopy and electron diffraction. The fivefold cyclic twinning relationship is confirmed by systematic axial rotation electron diffraction. Detailed chemical analysis reveals a carbon-rich boron carbide phase. Such boron carbide nanowires are potentially interesting because of their intrinsic hardness and high temperature thermoelectric property. Together with other boron-rich compounds, they may form a set of multiply twinned nanowire systems where the misfit strain could be continuously tuned to influence their mechanical properties.

  3. Atomistic simulations of pristine and defective hexagonal BN and SiC sheets under uniaxial tension

    Energy Technology Data Exchange (ETDEWEB)

    Le, Minh-Quy, E-mail: quy.leminh@hust.edu.vn [Department of Mechanics of Materials and Structures, School of Mechanical Engineering, Hanoi University of Science and Technology, No. 1, Dai Co Viet Road, Hanoi (Viet Nam); International Institute for Computational Science and Engineering, Hanoi University of Science and Technology, No. 1, Dai Co Viet Road, Hanoi (Viet Nam); Nguyen, Danh-Truong [Department of Mechanics of Materials and Structures, School of Mechanical Engineering, Hanoi University of Science and Technology, No. 1, Dai Co Viet Road, Hanoi (Viet Nam)

    2014-10-06

    The uniaxial tensile mechanical properties of pristine and defective hexagonal boron nitride (BN) and silicon carbide (SiC) sheets are investigated through a molecular dynamics finite element method with Tersoff and Tersoff-like potentials. 2-Atom vacancy and 2 types of Stone–Wales defects are considered. It is found that uniaxial tensile stress–strain curves of defective and pristine sheets are almost identical up to fracture points. A centered single defect reduces significantly fracture stress and fracture strain from those of the corresponding pristine sheet. In contrast, Young's modulus is nearly unchanged by a single defect. One 2-atom vacancy in the sheet's center reduces 15–18% and 16–25% in fracture stress, and 32–34% and 32–48% in fracture strain of BN and SiC sheets, respectively. Reduction in fracture properties depends on the tensile direction as well as the orientation of Stone–Wales defects.

  4. Oxidative Etching of Hexagonal Boron Nitride Toward Nanosheets with Defined Edges and Holes

    OpenAIRE

    Yunlong Liao; Kaixiong Tu; Xiaogang Han; Liangbing Hu; Connell, John W.; Zhongfang Chen; Yi Lin

    2015-01-01

    Lateral surface etching of two-dimensional (2D) nanosheets results in holey 2D nanosheets that have abundant edge atoms. Recent reports on holey graphene showed that holey 2D nanosheets can outperform their intact counterparts in many potential applications such as energy storage, catalysis, sensing, transistors, and molecular transport/separation. From both fundamental and application perspectives, it is desirable to obtain holey 2D nanosheets with defined hole morphology and hole edge struc...

  5. Mechanical properties and failure behaviors of the interface of hybrid graphene/hexagonal boron nitride sheets

    Science.gov (United States)

    Ding, Ning; Chen, Xiangfeng; Wu, Chi-Man Lawrence

    2016-01-01

    Hybrid graphene/h-BN sheet has been fabricated recently and verified to possess unusual physical properties. During the growth process, defects such as vacancies are unavoidably present at the interface between graphene and h-BN. In the present work, typical vacancy defects, which were located at the interface between graphene and h-BN, were studied by density functional theory. The interface structure, mechanical and electronic properties, and failure behavior of the hybrid graphene/h-BN sheet were investigated and compared. The results showed that the formation energy of the defective graphene/h-BN interface basically increased with increasing inflection angles. However, Young’s modulus for all graphene/h-BN systems studied decreased with the increase in inflection angles. The intrinsic strength of the hybrid graphene/h-BN sheets was affected not only by the inflection angles, but also by the type of interface connection and the type of defects. The energy band structure of the hybrid interface could be tuned by applying mechanical strain to the systems. These results demonstrated that vacancies introduced significant effects on the mechanical and electronic properties of the hybrid graphene/h-BN sheet. PMID:27527371

  6. Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators

    OpenAIRE

    Gaskell, J.; Eaves, L.; Novoselov, K. S.; Mishchenko, A.; Geim, A. K.; Fromhold, T. M.; Greenaway, M. T.

    2015-01-01

    We assess the potential of two-terminal graphene-hBN-graphene resonant tunneling diodes as high-frequency oscillators, using self-consistent quantum transport and electrostatic simulations to determine the time-dependent response of the diodes in a resonant circuit. We quantify how the frequency and power of the current oscillations depend on the diode and circuit parameters including the doping of the graphene electrodes, device geometry, alignment of the graphene lattices, and the circuit i...

  7. Mechanical properties and failure behaviors of the interface of hybrid graphene/hexagonal boron nitride sheets

    Science.gov (United States)

    Ding, Ning; Chen, Xiangfeng; Wu, Chi-Man Lawrence

    2016-08-01

    Hybrid graphene/h-BN sheet has been fabricated recently and verified to possess unusual physical properties. During the growth process, defects such as vacancies are unavoidably present at the interface between graphene and h-BN. In the present work, typical vacancy defects, which were located at the interface between graphene and h-BN, were studied by density functional theory. The interface structure, mechanical and electronic properties, and failure behavior of the hybrid graphene/h-BN sheet were investigated and compared. The results showed that the formation energy of the defective graphene/h-BN interface basically increased with increasing inflection angles. However, Young’s modulus for all graphene/h-BN systems studied decreased with the increase in inflection angles. The intrinsic strength of the hybrid graphene/h-BN sheets was affected not only by the inflection angles, but also by the type of interface connection and the type of defects. The energy band structure of the hybrid interface could be tuned by applying mechanical strain to the systems. These results demonstrated that vacancies introduced significant effects on the mechanical and electronic properties of the hybrid graphene/h-BN sheet.

  8. Mechanical properties and failure behaviors of the interface of hybrid graphene/hexagonal boron nitride sheets.

    Science.gov (United States)

    Ding, Ning; Chen, Xiangfeng; Wu, Chi-Man Lawrence

    2016-01-01

    Hybrid graphene/h-BN sheet has been fabricated recently and verified to possess unusual physical properties. During the growth process, defects such as vacancies are unavoidably present at the interface between graphene and h-BN. In the present work, typical vacancy defects, which were located at the interface between graphene and h-BN, were studied by density functional theory. The interface structure, mechanical and electronic properties, and failure behavior of the hybrid graphene/h-BN sheet were investigated and compared. The results showed that the formation energy of the defective graphene/h-BN interface basically increased with increasing inflection angles. However, Young's modulus for all graphene/h-BN systems studied decreased with the increase in inflection angles. The intrinsic strength of the hybrid graphene/h-BN sheets was affected not only by the inflection angles, but also by the type of interface connection and the type of defects. The energy band structure of the hybrid interface could be tuned by applying mechanical strain to the systems. These results demonstrated that vacancies introduced significant effects on the mechanical and electronic properties of the hybrid graphene/h-BN sheet. PMID:27527371

  9. Anisotropic diffusion limited aggregation in three dimensions: Universality and nonuniversality

    Science.gov (United States)

    Goold, Nicholas R.; Somfai, Ellák; Ball, Robin C.

    2005-09-01

    We explore the macroscopic consequences of lattice anisotropy for diffusion limited aggregation (DLA) in three dimensions. Simple cubic and bcc lattice growths are shown to approach universal asymptotic states in a coherent fashion, and the approach is accelerated by the use of noise reduction. These states are strikingly anisotropic dendrites with a rich hierarchy of structure. For growth on an fcc lattice, our data suggest at least two stable fixed points of anisotropy, one matching the bcc case. Hexagonal growths, favoring six planar and two polar directions, appear to approach a line of asymptotic states with continuously tunable polar anisotropy. The more planar of these growths visually resembles real snowflake morphologies. Our simulations use a new and dimension-independent implementation of the DLA model. The algorithm maintains a hierarchy of sphere coverings of the growth, supporting efficient random walks onto the growth by spherical moves. Anisotropy was introduced by restricting growth to certain preferred directions.

  10. Redetermination of the hexagonal struvite analogue Cs[Mg(OH26](PO4

    Directory of Open Access Journals (Sweden)

    Matthias Weil

    2008-08-01

    Full Text Available The structure of the hexagonal modification of caesium hexaaquamagnesium phosphate has been redetermined from single-crystal X-ray data. The previous refinement from photographic data [Ferrari, Calvaca & Nardelli (1955. Gazz. Chim. Ital. 85, 1232–1238] was basically confirmed, but with all H atoms located and with all non H-atoms refined with anisotropic displacement parameters. The structure can be derived from the NiAs structure type: the PO4 tetrahedra (3m. symmetry are on the Ni positions and the complex [Mg(OH26] octahedra (3m. symmetry are on the As positions. The building units are connected to each other by hydrogen bonds. The Cs+ cations (3m. symmetry are located in the voids of this arrangement and exhibit a distorted cuboctahedral 12-coordination by the O atoms of the water molecules.

  11. Shell Model for Elastic and Thermodynamic Properties of Gallium Nitride with Hexagonal Wurtzite Structure

    Institute of Scientific and Technical Information of China (English)

    CHENG Yan; TU Ya-Jing; ZENG Zhao-Yi; GOU Qing-Quan

    2008-01-01

    Shell model molecular dynamic simulation with interatomic pair potential is utilized to investigate the elastic and thermodynamic properties of gallium nitride with hexagonal wurtzite structure (w-GaN) at high pressure. The calculated elastic constants Cij at zero pressure and 300 K agree well with the experimental data and other calculated values. Meanwhile, the dependences of the relative volume V/Vo, elastic constants Cij, entropy S, enthalpy H, and heat capacities Cv and Cp on pressure are successfully obtained. From the elastic constants obtained, we also calculate the shear modulus G, bulk modulus B, Young's modulus E, Poisson's ratio v, Debye temperature ΘD, and shear anisotropic factor Ashear on pressures.

  12. Boron: do we know the ground state structure?

    Science.gov (United States)

    Ogitsu, Tadashi

    2006-03-01

    Boron is only the fifth element in the periodic table, having a simple electronic configuration, yet, it is known to form one of the most complicated crystal structures, β-rhombohedral structure. Up to date, the best estimate on the number of atoms in its hexagonal unit cell is 320.1, not even an integer number. The key concept to understand its complexity is covalency and electron deficiency: It does not have enough valence electrons to form a simple covalent crystal, like carbon or silicon. Instead it forms a complicated packing of icosahedrons. The structural model of β-boron was developed in the 1960s based on X-ray experiment. Although this model structure captures the most of the structural characteristics of β-boron, it has a crucial pitfall; the number of atoms per cell estimated by X-ray experiment does not agree with the number of atoms estimated by the pycnometric density. In 1988, Slack et al. discovered four more POS, by which the discrepancy in the number of atoms is reconciled [J. of Solid State Chem. 76, 52 (1988)]. There still remains an unanswered question; how are these POS atoms configured? Is it completely random? Or there is some kind of order as it has been suggested in Slack’s paper? A major challenge here is the astronomical number of possible configurations, roughly 150 million even for the irreducible cell. We tackle this problem using ab-initio simulated annealing coupled with a Lattice Model Monte Carlo simulated annealing. Our results reveal that the stable structure, indeed, has a certain type of correlation in its POS configuration. More detail on the structural property and its impact on electronic property of β-boron will be discussed at the presentation. This work was performed under the auspices of the U.S. Dept. of Energy at the University of California/ LLNL under contract no. W-7405-Eng-48.

  13. Hydrogen adsorption on hexagonal silicon nanotubes

    OpenAIRE

    Ryou, Junga; Hong, Suklyun; Kim, Gunn

    2009-01-01

    We present a first-principles study of geometrical structure and energetics of hydrogen adsorbed on hexagonal single-walled silicon nanotubes (SiNTs). The adsorption behaviors of hydrogen molecules in SiNTs are investigated. The binding energies for the most stable physisorbed configurations are calculated to be less than 0.1 eV. The energy barriers are also investigated for dissociation of H2 molecules. Finally, we consider encapsulation of H2 molecules in SiNTs. The possibility of SiNTs as ...

  14. Diagonal form factors and hexagon form factors

    CERN Document Server

    Jiang, Yunfeng

    2015-01-01

    We study the heavy-heavy-light (HHL) three-point functions in the planar N = 4 super-Yang- Mills theory using the recently proposed hexagon bootstrap program [arXiv:1505.06745]. We prove the conjecture of Bajnok, Janik and Wereszczynski [arXiv:1404.4556] on the polynomial L-dependence of HHL structure constant up to the leading finite-size corrections, where L is the length of the heavy operators. The proof is presented for a specific set-up but the method can be applied to more general situations.

  15. Functionalized boron nitride nanotubes

    Science.gov (United States)

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

    2014-04-22

    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  16. Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors.

    Science.gov (United States)

    Zou, Xuming; Huang, Chun-Wei; Wang, Lifeng; Yin, Long-Jing; Li, Wenqing; Wang, Jingli; Wu, Bin; Liu, Yunqi; Yao, Qian; Jiang, Changzhong; Wu, Wen-Wei; He, Lin; Chen, Shanshan; Ho, Johnny C; Liao, Lei

    2016-03-01

    A unique design of a hexagonal boron nitride (h-BN)/HfO2 dielectric heterostructure stack is demonstrated, with few-layer h-BN to alleviate the surface optical phonon scattering, followed by high-κ HfO2 deposition to suppress Coulombic impurity scattering so that high-performance top-gated two-dimensional semiconductor transistors are achieved. Furthermore, this dielectric stack can also be extended to GaN-based transistors to enhance their performance. PMID:26762171

  17. Bonding distances as Exact Sums of the Radii of the Constituent Atoms in Nanomaterials - Boron Nitride and Coronene

    OpenAIRE

    Heyrovska, Raji

    2010-01-01

    This paper presents for the first time the exact structures at the atomic level of two important nanomaterials, boron nitride and coronene. Both these compounds are hexagonal layer structures similar to graphene in two dimensions and to graphite in three-dimensions. However, they have very different properties: whereas graphene is a conductor, h-BN is an electrical insulator and coronene is a polycyclic aromatic hydrocarbon of cosmological interest. The atomic structures presented here for bo...

  18. Continuum mechanics of anisotropic materials

    CERN Document Server

    Cowin, Stephen C

    2013-01-01

    Continuum Mechanics of Anisotropic Materials(CMAM) presents an entirely new and unique development of material anisotropy in the context of an appropriate selection and organization of continuum mechanics topics. These features will distinguish this continuum mechanics book from other books on this subject. Textbooks on continuum mechanics are widely employed in engineering education, however, none of them deal specifically with anisotropy in materials. For the audience of Biomedical, Chemical and Civil Engineering students, these materials will be dealt with more frequently and greater accuracy in their analysis will be desired. Continuum Mechanics of Anisotropic Materials' author has been a leader in the field of developing new approaches for the understanding of anisotropic materials.

  19. Anisotropically structured magnetic aerogel monoliths

    Science.gov (United States)

    Heiligtag, Florian J.; Airaghi Leccardi, Marta J. I.; Erdem, Derya; Süess, Martin J.; Niederberger, Markus

    2014-10-01

    Texturing of magnetic ceramics and composites by aligning and fixing of colloidal particles in a magnetic field is a powerful strategy to induce anisotropic chemical, physical and especially mechanical properties into bulk materials. If porosity could be introduced, anisotropically structured magnetic materials would be the perfect supports for magnetic separations in biotechnology or for magnetic field-assisted chemical reactions. Aerogels, combining high porosity with nanoscale structural features, offer an exceptionally large surface area, but they are difficult to magnetically texture. Here we present the preparation of anatase-magnetite aerogel monoliths via the assembly of preformed nanocrystallites. Different approaches are proposed to produce macroscopic bodies with gradient-like magnetic segmentation or with strongly anisotropic magnetic texture.Texturing of magnetic ceramics and composites by aligning and fixing of colloidal particles in a magnetic field is a powerful strategy to induce anisotropic chemical, physical and especially mechanical properties into bulk materials. If porosity could be introduced, anisotropically structured magnetic materials would be the perfect supports for magnetic separations in biotechnology or for magnetic field-assisted chemical reactions. Aerogels, combining high porosity with nanoscale structural features, offer an exceptionally large surface area, but they are difficult to magnetically texture. Here we present the preparation of anatase-magnetite aerogel monoliths via the assembly of preformed nanocrystallites. Different approaches are proposed to produce macroscopic bodies with gradient-like magnetic segmentation or with strongly anisotropic magnetic texture. Electronic supplementary information (ESI) available: Digital photographs of dispersions and gels with different water-to-ethanol ratios; magnetic measurements of an anatase aerogel containing 0.25 mol% Fe3O4 nanoparticles; XRD patterns of the iron oxide and

  20. Dietary boron, brain function, and cognitive performance.

    OpenAIRE

    Penland, J G

    1994-01-01

    Although the trace element boron has yet to be recognized as an essential nutrient for humans, recent data from animal and human studies suggest that boron may be important for mineral metabolism and membrane function. To investigate further the functional role of boron, brain electrophysiology and cognitive performance were assessed in response to dietary manipulation of boron (approximately 0.25 versus approximately 3.25 mg boron/2000 kcal/day) in three studies with healthy older men and wo...

  1. Latest developments in anisotropic hydrodynamics

    CERN Document Server

    Tinti, Leonardo

    2015-01-01

    We discuss the leading order of anisotropic hydrodynamics expansion. It has already been shown that in the (0+1) and (1+1)-dimensional cases it is consistent with the second order viscous hydrodynamics, and it provides a striking agreement with the exact solutions of the Boltzmann equation. Quite recently, a new set of equations has been proposed for the leading order of anisotropic hydrodynamics, which is consistent with the second order viscous hydrodynamics in the most general (3+1)-dimensional case, and does not require a next-to-leading treatment for describing pressure anisotropies in the transverse plane.

  2. Dynamical analysis of anisotropic inflation

    Science.gov (United States)

    Karčiauskas, Mindaugas

    2016-06-01

    The inflaton coupling to a vector field via the f(φ)2F μνFμν term is used in several contexts in the literature, such as to generate primordial magnetic fields, to produce statistically anisotropic curvature perturbation, to support anisotropic inflation, and to circumvent the η-problem. In this work, I perform dynamical analysis of this system allowing for the most general Bianchi I initial conditions. I also confirm the stability of attractor fixed points along phase-space directions that had not been investigated before.

  3. Anisotropic hydrodynamics: Motivation and methodology

    International Nuclear Information System (INIS)

    In this proceedings contribution I review recent progress in our understanding of the bulk dynamics of relativistic systems that possess potentially large local rest frame momentum-space anisotropies. In order to deal with these momentum-space anisotropies, a reorganization of relativistic viscous hydrodynamics can be made around an anisotropic background, and the resulting dynamical framework has been dubbed “anisotropic hydrodynamics”. I also discuss expectations for the degree of momentum-space anisotropy of the quark–gluon plasma generated in relativistic heavy ion collisions at RHIC and LHC from second-order viscous hydrodynamics, strong-coupling approaches, and weak-coupling approaches

  4. Banishing brittle bones with boron

    Energy Technology Data Exchange (ETDEWEB)

    A 6-month study indicates that boron, not even considered an essential nutrient for people and animals, may be a key to preventing osteoporosis, say nutritionist Forrest H. Nielsen and anatomist Curtiss D. Hunt at ARS' Grand Forks, North Dakota, Human Nutrition Research Center. They believe the results of the study - the first to look at the nutritional effects of boron in humans - will generate a lot of interest in the element. In the study, 12 postmenopausal women consumed a very low boron diet (0.25 milligrams per day) for 17 weeks then were given a daily 3-mg supplement - representing the boron intake from a well-balanced diet - for 7 more weeks. Within 8 days after the supplement was introduced, the lost 40 percent less calcium, one-third less magnesium, and slightly less phosphorus through the urine. In fact, their calcium and magnesium losses were lower than prestudy levels, when they were on their normal diets. Since boron isn't considered essential for people, there is not recommended intake and no boron supplement on the market. Nielsen says the supplement of sodium borate used in the study was specially prepared based on the amount of boron a person would get from a well-balanced diet containing fruits and vegetables. He says the average boron intake is about 1.5 mg - or half the experimental dose - but average means a lot of people get less and a lot get more. Hunt cautioned that large doses of boron can be toxic, even lethal. The lowest reported lethal dose of boric acid is about 45 grams (1.6 ounces) for an adult and only 2 grams (0.07 ounce) for an infant.

  5. Rapid accurate isotopic measurements on boron in boric acid and boron carbide.

    Science.gov (United States)

    Duchateau, N L; Verbruggen, A; Hendrickx, F; De Bièvre, P

    1986-04-01

    A procedure is described whereby rapid and accurate isotopic measurements can be performed on boron in boric acid and boron carbide after fusion of these compounds with calcium carbonate. It allows the determination of the isotopic composition of boron in boric acid and boron carbide and the direct assay of boron or the (10)B isotope in boron carbide by isotope-dilution mass spectrometry.

  6. Transverse electric surface mode in atomically thin Boron-Nitride

    CERN Document Server

    Merano, Michele

    2016-01-01

    The spatial confinement and the propagation length of surface waves in a single-layer two-dimensional atomic crystal are analysed in term of its surface susceptibility and its surface conductivity. Based on the values of these macroscopic parameters, extracted from experimental observations, it is confirmed that graphene supports a transverse magnetic non-radiating surface mode in the ultraviolet spectral region while a single-layer hexagonal Boron-Nitride is predicted to support a transverse electric non-radiating surface mode in the visible spectrum. This last mode, at a vacuum wavelength of 633 nm, has a spatial confinement of 15 microns and an intensity-propagation distance greater than 2 cm.

  7. A molecular dynamics study of nanofracture in monolayer boron nitride

    International Nuclear Information System (INIS)

    In this paper, we use molecular dynamics (MD) modeling to study the fracture properties of monolayer hexagonal boron nitride (h-BN) under mixed mode I and II loading. We investigate the impact of crack edge chirality, crack tip configuration and loading phase angle on the crack propagation path and critical stress intensity factors. The MD results predict that under all the loading phase angles cracks prefer to propagate along a zigzag direction and the critical stress intensity factors of zigzag cracks are higher than those of armchair cracks. Under mixed mode loading, the h-BN sheets can undergo out-of-plane deformations due to the buckling induced by compressive stresses. The out-of-plane deformations can be significant when mode II loading is dominant. An excessive amount of out-of-plane deformation can induce buckling cracks. Depending on the loading phase angle and crack configurations, buckling cracks can nucleate before or after the propagation of the original cracks

  8. Piezoelectricity in planar boron nitride via a geometric phase

    Science.gov (United States)

    Droth, Matthias; Burkard, Guido; Pereira, Vitor M.

    2016-08-01

    Due to their low surface mass density, two-dimensional materials with a strong piezoelectric response are interesting for nanoelectromechanical systems with high force sensitivity. Unlike graphene, the two sublattices in a monolayer of hexagonal boron nitride (hBN) are occupied by different elements, which breaks inversion symmetry and allows for piezoelectricity. This has been confirmed with density functional theory calculations of the piezoelectric constant of hBN. Here, we formulate an entirely analytical derivation of the electronic contribution to the piezoelectric response in this system based on the concepts of strain-induced pseudomagnetic vector potential and the modern theory of polarization that relates the polar moment to the Berry curvature. Our findings agree with the symmetry restrictions expected for the hBN lattice and reproduce well the magnitude of the piezoelectric effect previously obtained ab initio.

  9. A new and effective approach to boron removal by using novel boron-specific fungi isolated from boron mining wastewater.

    Science.gov (United States)

    Taştan, Burcu Ertit; Çakir, Dilara Nur; Dönmez, Gönül

    2016-01-01

    Boron-resistant fungi were isolated from the wastewater of a boron mine in Turkey. Boron removal efficiencies of Penicillium crustosum and Rhodotorula mucilaginosa were detected in different media compositions. Minimal Salt Medium (MSM) and two different waste media containing molasses (WM-1) or whey + molasses (WM-2) were tested to make this process cost effective when scaled up. Both isolates achieved high boron removal yields at the highest boron concentrations tested in MSM and WM-1. The maximum boron removal yield by P. crustosum was 45.68% at 33.95 mg l(-1) initial boron concentration in MSM, and was 38.97% at 42.76 mg l(-1) boron for R. mucilaginosa, which seemed to offer an economically feasible method of removing boron from the effluents. PMID:26877036

  10. A 3D porous media liver lobule model: the importance of vascular septa and anisotropic permeability for homogeneous perfusion.

    Science.gov (United States)

    Debbaut, Charlotte; Vierendeels, Jan; Siggers, Jennifer H; Repetto, Rodolfo; Monbaliu, Diethard; Segers, Patrick

    2014-01-01

    The hepatic blood circulation is complex, particularly at the microcirculatory level. Previously, 2D liver lobule models using porous media and a 3D model using real sinusoidal geometries have been developed. We extended these models to investigate the role of vascular septa (VS) and anisotropic permeability. The lobule was modelled as a hexagonal prism (with or without VS) and the tissue was treated as a porous medium (isotropic or anisotropic permeability). Models were solved using computational fluid dynamics. VS inclusion resulted in more spatially homogeneous perfusion. Anisotropic permeability resulted in a larger axial velocity component than isotropic permeability. A parameter study revealed that results are most sensitive to the lobule size and radial pressure drop. Our model provides insight into hepatic microhaemodynamics, and suggests that inclusion of VS in the model leads to perfusion patterns that are likely to reflect physiological reality. The model has potential for applications to unphysiological and pathological conditions. PMID:23237543

  11. A 3D porous media liver lobule model: the importance of vascular septa and anisotropic permeability for homogeneous perfusion.

    Science.gov (United States)

    Debbaut, Charlotte; Vierendeels, Jan; Siggers, Jennifer H; Repetto, Rodolfo; Monbaliu, Diethard; Segers, Patrick

    2014-01-01

    The hepatic blood circulation is complex, particularly at the microcirculatory level. Previously, 2D liver lobule models using porous media and a 3D model using real sinusoidal geometries have been developed. We extended these models to investigate the role of vascular septa (VS) and anisotropic permeability. The lobule was modelled as a hexagonal prism (with or without VS) and the tissue was treated as a porous medium (isotropic or anisotropic permeability). Models were solved using computational fluid dynamics. VS inclusion resulted in more spatially homogeneous perfusion. Anisotropic permeability resulted in a larger axial velocity component than isotropic permeability. A parameter study revealed that results are most sensitive to the lobule size and radial pressure drop. Our model provides insight into hepatic microhaemodynamics, and suggests that inclusion of VS in the model leads to perfusion patterns that are likely to reflect physiological reality. The model has potential for applications to unphysiological and pathological conditions.

  12. Magnetic relaxation in anisotropic magnets

    DEFF Research Database (Denmark)

    Lindgård, Per-Anker

    1971-01-01

    The line shape and the kinematic and thermodynamic slowing down of the critical and paramagnetic relaxation in axially anisotropic materials are discussed. Kinematic slowing down occurs only in the longitudinal relaxation function. The thermodynamic slowing down occurs in either the transverse or...

  13. Anisotropic Poisson Processes of Cylinders

    CERN Document Server

    Spiess, Malte

    2010-01-01

    Main characteristics of stationary anisotropic Poisson processes of cylinders (dilated k-dimensional flats) in d-dimensional Euclidean space are studied. Explicit formulae for the capacity functional, the covariance function, the contact distribution function, the volume fraction, and the intensity of the surface area measure are given which can be used directly in applications.

  14. Failure in imperfect anisotropic materials

    DEFF Research Database (Denmark)

    Legarth, Brian Nyvang

    2005-01-01

    The fundamental cause of crack growth, namely nucleation and growth of voids, is investigated numerically for a two phase imperfect anisotropic material. A unit cell approach is adopted from which the overall stress strain is evaluated. Failure is observed as a sudden stress drop and depending...

  15. Combinatorics of giant hexagonal bilayer hemoglobins.

    Science.gov (United States)

    Hanin, L G; Vinogradov, S N

    2000-01-01

    The paper discusses combinatorial and probabilistic models allowing to characterize various aspects of spacial symmetry and structural heterogeneity of the giant hexagonal bilayer hemoglobins (HBL Hb). Linker-dodecamer configurations of HBL are described for two and four linker types (occurring in the two most studied HBL Hb of Arenicola and Lumbricus, respectively), and the most probable configurations are found. It is shown that, for HBL with marked dodecamers, the number of 'normal-marked' pairs of dodecamers in homological position follows a binomial distribution. The group of symmetries of the dodecamer substructure of HBL is identified with the dihedral group D6. Under natural symmetry assumptions, the total dipole moment of the dodecamer substructure of HBL is shown to be zero. Biological implications of the mathematical findings are discussed.

  16. The hexagon hypothesis: Six disruptive scenarios.

    Science.gov (United States)

    Burtles, Jim

    2015-01-01

    This paper aims to bring a simple but effective and comprehensive approach to the development, delivery and monitoring of business continuity solutions. To ensure that the arguments and principles apply across the board, the paper sticks to basic underlying concepts rather than sophisticated interpretations. First, the paper explores what exactly people are defending themselves against. Secondly, the paper looks at how defences should be set up. Disruptive events tend to unfold in phases, each of which invites a particular style of protection, ranging from risk management through to business continuity to insurance cover. Their impact upon any business operation will fall into one of six basic scenarios. The hexagon hypothesis suggests that everyone should be prepared to deal with each of these six disruptive scenarios and it provides them with a useful benchmark for business continuity. PMID:26420396

  17. Elliptically distributed lozenge tilings of a hexagon

    CERN Document Server

    Betea, Dan

    2011-01-01

    We present a detailed study of a 4 parameter family of elliptic weights on tilings of a hexagon introduced by Borodin, Gorin and Rains, and generalize some of their results. In the process, we connect the combinatorics of the model with the theory of elliptic special functions. We first analyze some properties of the measure and introduce canonical coordinates that are useful for combinatorially interpreting results. We then show how the computed $n$-point function (called the elliptic Selberg density) and transitional probabilities connect to the theory of $BC_n$-symmetric multivariate elliptic special functions and difference operators discovered by Rains. In particular, the difference operators intrinsically capture the combinatorial model under study, while the elliptic Selberg density is a generalization (deformation) of probability distributions pervasive in the theory of random matrices and interacting particle systems. Based on quasi-commutation relations between elliptic difference operators, we cons...

  18. Permeation of Light Gases through Hexagonal Ice

    Directory of Open Access Journals (Sweden)

    Luis Gales

    2012-09-01

    Full Text Available Gas separation using porous solids have attracted great attention due to their energetic applications. There is an enormous economic and environmental interest in the development of improved technologies for relevant processes, such as H2 production, CO2 separation or O2 and N2 purification from air. New materials are needed for achieving major improvements. Crystalline materials, displaying unidirectional and single-sized pores, preferentially with low pore tortuosity and high pore density, are promising candidates for membrane synthesis. Herein, we study hexagonal ice crystals as an example of this class of materials. By slowly growing ice crystals inside capillary tubes we were able to measure the permeation of several gas species through ice crystals and investigate its relation with both the size of the guest molecules and temperature of the crystal.

  19. Anisotropic thermopower of the organic metal, β-(BEDT-TTF)2I3

    DEFF Research Database (Denmark)

    Mortensen, Kell; Williams, J.M.; Wang, H.H.

    1985-01-01

    Thermopower of the ambient pressure organic superconductor β-(BEDT-TTF)2I3 has been studied. Measurements performed on, respectively, crystals of needle formed morphology and on flake-like crystals with hexagon shape showed equal thermopower results. S was measured along the a-axis as well as along...... the b′-axis. Marked anisotropy is observed in the entire temperature region studied. The temperature dependence, as represented by dS/dT, is, however, nearly isotropic. On the basis of an analysis of anisotropic thermopower we attribute the isotropic part of S to a term depending on the bond...

  20. Extrinsic spin Hall effect from anisotropic Rashba spin-orbit coupling in graphene

    Science.gov (United States)

    Yang, H.-Y.; Huang, Chunli; Ochoa, H.; Cazalilla, M. A.

    2016-02-01

    We study the effect of anisotropy of the Rashba coupling on the extrinsic spin Hall effect due to spin-orbit active adatoms on graphene. In addition to the intrinsic spin-orbit coupling, a generalized anisotropic Rashba coupling arising from the breakdown of both mirror and hexagonal symmetries of pristine graphene is considered. We find that Rashba anisotropy can strongly modify the dependence of the spin Hall angle on carrier concentration. Our model provides a simple and general description of the skew scattering mechanism due to the spin-orbit coupling that is induced by proximity to large adatom clusters.

  1. Structural characterization of electrodeposited boron

    Indian Academy of Sciences (India)

    Ashish Jain; C Ghosh; T R Ravindran; S Anthonysamy; R Divakar; E Mohandas; G S Gupta

    2013-12-01

    Structural characterization of electrodeposited boron was carried out by using transmission electron microscopy and Raman spectroscopy. Electron diffraction and phase contrast imaging were carried out by using transmission electron microscopy. Phase identification was done based on the analysis of electron diffraction patterns and the power spectrum calculated from the lattice images from thin regions of the sample. Raman spectroscopic examination was carried out to study the nature of bonding and the allotropic form of boron obtained after electrodeposition. The results obtained from transmission electron microscopy showed the presence of nanocrystallites embedded in an amorphous mass of boron. Raman microscopic studies showed that amorphous boron could be converted to its crystalline form at high temperatures.

  2. Anisotropic plastic deformation behavior of as-extruded ZK60 magnesium alloy at room temperature

    Institute of Scientific and Technical Information of China (English)

    HANS; J; R

    2009-01-01

    The anisotropic plastic deformation behavior of as-extruded ZK60 magnesium alloy at room tempera-ture (RT) was investigated by compressive and tensile testing in different directions, i.e. the loading axis oriented at 0°, 45° and 90° to the extrusion direction. The relationship between texture and plastic deformation behavior were examined. The results show that the extruded ZK60 alloy exhibits a strong ring fiber texture. The mechanical properties are strongly orientation dependent. In tension testing, the 0° specimen exhibited higher yield strength and lower elongation. In compression testing, however, ZK60 alloy exhibited almost the same yield strength in three directions. The anisotropic plastic defor-mation behavior is due to strong fiber texture and the lower symmetry of the hexagonal close packed (hcp) structure of ZK60 alloy. The correlation between texture and mechanical behaviour offers the possibility to improve the mechanical properties of magnesium alloy by optimization of the material production process.

  3. Boron diffusion in silicon devices

    Science.gov (United States)

    Rohatgi, Ajeet; Kim, Dong Seop; Nakayashiki, Kenta; Rounsaville, Brian

    2010-09-07

    Disclosed are various embodiments that include a process, an arrangement, and an apparatus for boron diffusion in a wafer. In one representative embodiment, a process is provided in which a boric oxide solution is applied to a surface of the wafer. Thereafter, the wafer is subjected to a fast heat ramp-up associated with a first heating cycle that results in a release of an amount of boron for diffusion into the wafer.

  4. Boron toxicity in Lemna gibba

    OpenAIRE

    Mayra Sánchez Villavicencio; Carlos Álvarez Silva; Guadalupe Miranda Arce

    2007-01-01

    Total soluble phenols and total chlorophylls content, changes of biomass and concentration factor in Lemna gibba exposed to different concentrations of boron were measured. Day six soluble phenols showed significant differences in treatment with 10 mg/L of boron. At day ten, chlorophylls content in treatment 2 mg/L concentration increased respect to other experimental groups and control group, there were no significant differences. Biomass of Lemna gibba decreased significant in treatments wi...

  5. Boron Fullerenes: A First-Principles Study

    Directory of Open Access Journals (Sweden)

    Gonzalez Szwacki Nevill

    2007-01-01

    Full Text Available AbstractA family of unusually stable boron cages was identified and examined using first-principles local-density functional method. The structure of the fullerenes is similar to that of the B12icosahedron and consists of six crossing double-rings. The energetically most stable fullerene is made up of 180 boron atoms. A connection between the fullerene family and its precursors, boron sheets, is made. We show that the most stable boron sheets are not necessarily precursors of very stable boron cages. Our finding is a step forward in the understanding of the structure of the recently produced boron nanotubes.

  6. Boron nitrides synthesized directly from the elements at high pressures and temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Nicol, M.; Yoo, C.S.; Akella, J.; Cynn, H.

    1996-11-01

    We use angle-resolved synchrotron x-ray diffraction, laser sample heating, and diamond-anvil cells to follow in-situ chemical reactions directly between elemental boron and nitrogen. The structures of the solid reaction products vary with pressure. Below 10 GPa, hexagonal BN is the product; cubic or wurzite BN form at higher pressures. Under nitrogen-rich conditions, another hexagonal allotrope occurs which seems to be a new highly transparent, low density h`-BN. No direct reactions occur at ambient temperature even at pressures as high as 50 GPa, implying that a large activation barrier limits the kinetics of these exothermic processes. Laser heating overcomes the large kinetic activation barrier and initiates spontaneous, self-sustaining exothermic reactions even at moderate pressures.

  7. Dimensional Crossover of Thermal Transport in Hybrid Boron Nitride Nanostructures.

    Science.gov (United States)

    Sakhavand, Navid; Shahsavari, Rouzbeh

    2015-08-26

    Although boron nitride nanotubes (BNNT) and hexagonal-BN (hBN) are superb one-dimensional (1D) and 2D thermal conductors respectively, bringing this quality into 3D remains elusive. Here, we focus on pillared boron nitride (PBN) as a class of 3D BN allotropes and demonstrate how the junctions, pillar length and pillar distance control phonon scattering in PBN and impart tailorable thermal conductivity in 3D. Using reverse nonequilibrium molecular dynamics simulations, our results indicate that although a clear phonon scattering at the junctions accounts for the lower thermal conductivity of PBN compared to its parent BNNT and hBN allotropes, it acts as an effective design tool and provides 3D thermo-mutable features that are absent in the parent structures. Propelled by the junction spacing, while one geometrical parameter, e.g., pillar length, controls the thermal transport along the out-of-plane direction of PBN, the other parameter, e.g., pillar distance, dictates the gross cross-sectional area, which is key for design of 3D thermal management systems. Furthermore, the junctions have a more pronounced effect in creating a Kapitza effect in the out-of-plane direction, due to the change in dimensionality of the phonon transport. This work is the first report on thermo-mutable properties of hybrid BN allotropes and can potentially impact thermal management of other hybrid 3D BN architectures. PMID:26158661

  8. Two-dimensional boron nitride structures functionalization: first principles studies.

    Science.gov (United States)

    Ponce-Pérez, R; Cocoletzi, Gregorio H; Takeuchi, Noboru

    2016-09-01

    Density functional theory calculations have been performed to investigate two-dimensional hexagonal boron nitride (2D hBN) structures functionalization with organic molecules. 2x2, 4x4 and 6x6 periodic 2D hBN layers have been considered to interact with acetylene. To deal with the exchange-correlation energy the generalized gradient approximation (GGA) is invoked. The electron-ion interaction is treated with the pseudopotential method. The GGA with the Perdew-Burke-Ernzerhoff (PBE) functionals together with van der Waals interactions are considered to deal with the composed systems. To investigate the functionalization two main configurations have been explored; in one case the molecule interacts with the boron atom and in the other with the nitrogen atom. Results of the adsorption energies indicate chemisorption in both cases. The total density of states (DOS) displays an energy gap in both cases. The projected DOS indicate that the B-p and N-p orbitals are those that make the most important contribution in the valence band and the H-s and C-p orbitals provide an important contribution in the conduction band to the DOS. Provided that the interactions of the acetylene with the 2D layer modify the structural and electronic properties of the hBN the possibility of structural functionalization using organic molecules may be concluded. PMID:27566317

  9. Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors.

    Science.gov (United States)

    Vdovin, E E; Mishchenko, A; Greenaway, M T; Zhu, M J; Ghazaryan, D; Misra, A; Cao, Y; Morozov, S V; Makarovsky, O; Fromhold, T M; Patanè, A; Slotman, G J; Katsnelson, M I; Geim, A K; Novoselov, K S; Eaves, L

    2016-05-01

    We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states. PMID:27203338

  10. Controlling the microstructure and properties of wire arc additive manufactured Ti–6Al–4V with trace boron additions

    International Nuclear Information System (INIS)

    This study demonstrates that trace boron addition to Ti–6Al–4V coupons produced by additive layer manufacturing is an effective way to eliminate the deleterious anisotropic microstructures often encountered with this manufacturing technique. Trace boron additions (up to 0.13 wt.%) to this alloy eliminate grain boundary-α and colony-α, and instead produce a homogeneous α-microstructure consisting of fine equiaxed α-grains in both as-deposited and heat treated coupons. Prior-β grains remain columnar with boron addition but become narrower due to the wider solidification range and growth restricting effect of the boron solute. Compared to unmodified Ti–6Al–4V alloy, Ti–6Al–4V modified with trace boron additions showed up to 40% improvement in plasticity with no loss in strength under uniaxial compression at room temperature. Boron additions were found to inhibit twinning transmission that causes sudden large load drops during deformation of the unmodified Ti–6Al–4V alloy in the heat treated condition

  11. Carbon nanotubes with atomic impurities on boron nitride sheets under applied electric fields

    OpenAIRE

    Kang, Seoung-Hun; Kim, Gunn; Kwon, Young-Kyun

    2013-01-01

    We perform first-principles calculations to investigate the structural and electronic properties of metal-doped (10, 0) carbon nanotubes (CNTs) on a single hexagonal boron nitride (hBN) sheet in the presence of an external electric field. We consider K, Cl and Ni atoms as dopants to study the dependence of the electronic properties of the CNT on doping polarity and concentration. The electric field strength is varied from -0.2 V/\\AA to +0.2 V/\\AA to explore the effects of an external electric...

  12. Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors

    OpenAIRE

    Vdovin, E.E.; Mishchenko, A.; Greenaway, M. T.; Zhu, M. J.; Ghazaryan, D.; A. Misra; Y. Cao; Morozov, S. V.; Makarovsky, O.; Fromhold, T. M.; Patanè, A.; Slotman, G. J.; Katsnelson, M. I.; Geim, A K; Novoselov, K. S.

    2015-01-01

    We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\\sim$10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled...

  13. Ab Initio Investigations of Thermoelectric Effects in Graphene – Boron Nitride Nanoribbons

    Directory of Open Access Journals (Sweden)

    Visan Camelia

    2016-01-01

    Full Text Available Thermoelectric effects of graphene – hexagonal boron nitride (hBN nanoribbons have been investigated by density functional theory (DFT calculations. Pristine zig-zag nanoribbons are not suited to achieve high thermopower as the transmission function is flat around the chemical potential. By introducing hBN inclusions, the nanoribbon systems exhibit enhanced thermopower, due to the asymmetries introduced in the spin dependent transmission functions. Finite temperature differences between the two contacts are considered. The possibility of a good integration of hBN into graphene, makes the hybrid systems suitable for thermoelectric applications, which may be subject to further optimizations.

  14. Synthesis and anti-oxidation performance of nanoflake-decorated boron nitride hollow microspheres

    Energy Technology Data Exchange (ETDEWEB)

    Li, Juan [College of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004 (China); Lin, Hong [Department of Materials Science and Engineering, State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084 (China); Chen, Yongjun, E-mail: chenyj99@163.com [College of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004 (China); College of Material and Chemical Engineering, Hainan University, Haikou 570228 (China); Su, Qiaoqiao; Bi, Xiaofan [College of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004 (China)

    2013-02-15

    Highlights: Black-Right-Pointing-Pointer A novel boron nitride (BN) composite structure composed of nanoflake and hollow microspheres was synthesized. Black-Right-Pointing-Pointer The raw materials are simple precursors of boron and Fe(NO{sub 3}){sub 3}{center_dot}9H{sub 2}O ethanol solution. Black-Right-Pointing-Pointer The structures have a high anti-oxidation temperature of 900 Degree-Sign C. Black-Right-Pointing-Pointer The growth mechanism consists of a combined vapor-liquid-solid (VLS) and vapor-solid (VS) model. - Abstract: In this study, a novel boron nitride composite structure composed of nanoflake-decorated hollow microspheres is demonstrated. A paste-like mixture is firstly prepared by mixing amorphous boron with ferric nitrate ethanol solution, followed by heating at 1300 Degree-Sign C in a flowing ammonia atmosphere for 5 h. Both the nanoflakes and microspheres are composed of crystalline hexagonal boron nitride. The hollow spheres have outer diameters of 0.8-3 {mu}m with thickness of about 300 nm, while the nanoflakes have thicknesses of 2-7 nm and lengths of 10-100 nm. Heating temperature is found to be crucial for the formation of this composite structure. The growth process consists of a vapor-liquid-solid growth stage of smooth hollow microspheres at lower temperature and a vapor-solid growth stage of nanoflakes on the surface of the microspheres at higher temperature. The boron nitride composite structure exhibits excellent anti-oxidation performance up to 900 Degree-Sign C.

  15. Anisotropic Inflation and Cosmological Observations

    CERN Document Server

    Emami, Razieh

    2015-01-01

    Recent observations opened up a new window on the inflationary model building. As it was firstly reported by the WMAP data, there may be some indications of statistical anisotropy on the CMB map, although the statistical significance of these findings are under debate. Motivated by these observations, people begun considering new inflationary models which may lead to statistical anisotropy. The simplest possible way to construct anisotropic inflation is to introduce vector fields. During the course of this thesis, we study models of anisotropic inflation and their observational implications such as power spectrum, bispectrum etc. Firstly we build a new model, which contains the gauge field which breaks the conformal invariance while preserving the gauge invariance. We show that in these kind of models, there can be an attractor phase in the evolution of the system when the back-reaction of the gauge field becomes important in the evolution of the inflaton field. We then study the cosmological perturbation the...

  16. Stealths on Anisotropic Holographic Backgrounds

    CERN Document Server

    Ayón-Beato, Eloy; Juárez-Aubry, María Montserrat

    2015-01-01

    In this paper, we are interested in exploring the existence of stealth configurations on anisotropic backgrounds playing a prominent role in the non-relativistic version of the gauge/gravity correspondence. By stealth configuration, we mean a nontrivial scalar field nonminimally coupled to gravity whose energy-momentum tensor evaluated on the anisotropic background vanishes identically. In the case of a Lifshitz spacetime with a nontrivial dynamical exponent z, we spotlight the role played by the anisotropy to establish the holographic character of the stealth configurations, i.e. the scalar field is shown to only depend on the radial holographic direction. This configuration which turns out to be massless and without integration constants is possible for a unique value of the nonminimal coupling parameter. Then, using a simple conformal argument, we map this configuration into a stealth solution defined on the so-called hyperscaling violation metric which is conformally related to the Lifshitz spacetime. Thi...

  17. Conductivities in an anisotropic medium

    CERN Document Server

    Khimphun, Sunly; Park, Chanyong

    2016-01-01

    In order to imitate anisotropic medium of a condensed matter system, we take into account an Einstein-Maxwell-dilaton-axion model as a dual gravity theory where the anisotropy is caused by different momentum relaxations. This gravity model allows an anisotropic charged black hole solution. On this background, we investigate how the linear responses of vector modes like electric, thermoelectric, and thermal conductivities rely on the anisotropy. We find that the electric conductivity in low frequency limit shows a Drude peak and that in the intermediate frequency regime it reveals the power law behavior. Especially, when the anisotropy increases the exponent of the power law becomes smaller. In addition, we find that there exist a critical value for the anisotropy at which the DC conductivity reaches to its maximum value.

  18. Microheater made of heavily boron doped single crystal silicon beam

    International Nuclear Information System (INIS)

    Microheater made of heavily Boron doped single crystal Si beam covered with SiO2 film, 1000 x 300 x 3 μm, is fabricated on the n type Si substrate by the anisotropic etching technique. As this microheater has an air bridge structure of low resistivity semiconductor material with positive but small temperature coefficient of resistance, a broad heating area up to 800 degrees C is easily obtained and it has quick response with the thermal time constant t of about 4 ms and has small power consumption. Since this heating area is made of p type layer in the n type substrate, this area can be electrically isolated from the substrate because of the formation of p-n junction

  19. Enrichment and desalting of tryptic protein digests and the protein depletion using boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Fischnaller, Martin; Köck, Rainer; Bakry, Rania, E-mail: rania.bakry@uibk.ac.at; Bonn, Günther K.

    2014-05-01

    Highlights: • Protein tryptic digests were desalted and enriched utilizing hexagonal boron nitride. • Phosphopeptides were desalted with high recovery rates. • Boron nitride exhibits high wettability allowing fast sample preparation. • Boron nitride shows protein depletion capability applied for peptide purification. - Abstract: Sample preparation still remains a great challenge in modern bioanalysis and the interest in new efficient solid phase extraction (SPE) materials still remains high. In this work, hexagonal boron nitride (h-BN) is introduced as a new SPE material for the isolation and enrichment of peptides. The h-BN is isoelectronic and structurally similar to graphite. It has remarkable properties including good thermal conductivity, excellent thermal and chemical stability and a better oxidation resistance than graphite. BN attracts increasing interest because of its wide range of applicability. In the present work, the great potential of h-BN, as a new SPE-material, on the enrichment, preconcentration and desalting of tryptic digest of model proteins is demonstrated. A special attention was dedicated to the efficient enrichment of hydrophilic phosphopeptides. Two elution protocols were developed for the enrichment of peptides compatible for subsequent MALDI-MS and ESI-MS analysis. In addition, the recoveries of 5 peptides and 3 phosphopeptides with wide range of pI values utilizing h-BN materials with different surface areas were investigated. 84–106% recovery rate could be achieved using h-BN materials. The results were compared with those obtained using graphite and silica C18 under the same elution conditions, and lower recoveries were obtained. In addition, h-BN was found to have a capability of protein depletion, which is requisite for the peptide profiling.

  20. Performance of the ARIANNA Hexagonal Radio Array

    CERN Document Server

    Barwick, S W; Besson, D Z; Binder, G; Binns, W R; Boersma, D; Bose, R G; Braun, D L; Buckley, J H; Bugaev, V; Buitink, S; Dookayka, K; Dowkontt, P F; Duffin, T; Euler, S; Gerhardt, L; Gustafsson, L; Hallgren, A; Hanson, J C; Israel, M H; Kiryluk, J; Klein, S; Kleinfelder, S; Nelles, A; Niederhausen, H; Olevitch, M A; Persichelli, C; Ratzlaff, K; Rauch, B F; Reed, C; Roumi, M; Samanta, A; Simburger, G E; Stezelberger, T; Tatar, J; Uggerhoj, U; Walker, J; Young, R

    2015-01-01

    Installation of the ARIANNA Hexagonal Radio Array (HRA) on the Ross Ice Shelf of Antarctica has been completed. This detector serves as a pilot program to the ARIANNA neutrino telescope, which aims to measure the diffuse flux of very high energy neutrinos by observing the radio pulse generated by neutrino-induced charged particle showers in the ice. All HRA stations ran reliably and took data during the entire 2014-2015 austral summer season. A new radio signal direction reconstruction procedure is described, and is observed to have a resolution better than a degree. The reconstruction is used in a preliminary search for potential neutrino candidate events in the data from one of the newly installed detector stations. Three cuts are used to separate radio backgrounds from neutrino signals. The cuts are found to filter out all data recorded by the station during the season while preserving 85.4% of simulated neutrino events that trigger the station. This efficiency is similar to that found in analyses of previ...

  1. Bootstrapping the Three-Loop Hexagon

    Energy Technology Data Exchange (ETDEWEB)

    Dixon, Lance J.; /CERN /SLAC; Drummond, James M.; /CERN /Annecy, LAPTH; Henn, Johannes M.; /Humboldt U., Berlin /Santa Barbara, KITP

    2011-11-08

    We consider the hexagonal Wilson loop dual to the six-point MHV amplitude in planar N = 4 super Yang-Mills theory. We apply constraints from the operator product expansion in the near-collinear limit to the symbol of the remainder function at three loops. Using these constraints, and assuming a natural ansatz for the symbol's entries, we determine the symbol up to just two undetermined constants. In the multi-Regge limit, both constants drop out from the symbol, enabling us to make a non-trivial confirmation of the BFKL prediction for the leading-log approximation. This result provides a strong consistency check of both our ansatz for the symbol and the duality between Wilson loops and MHV amplitudes. Furthermore, we predict the form of the full three-loop remainder function in the multi-Regge limit, beyond the leading-log approximation, up to a few constants representing terms not detected by the symbol. Our results confirm an all-loop prediction for the real part of the remainder function in multi-Regge 3 {yields} 3 scattering. In the multi-Regge limit, our result for the remainder function can be expressed entirely in terms of classical polylogarithms. For generic six-point kinematics other functions are required.

  2. Adsorption of boron from boron-containing wastewaters by ion exchange in a continuous reactor

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Environmental Engeneering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey)]. E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Environmental Engeneering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey); Yilmaz, M. Tolga [Environmental Engeneering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Chemical Engineering Department, Engineering Faculty, Atatuerk University, 25240 Erzurum (Turkey)

    2005-01-31

    In this study, boron removal from boron-containing wastewaters prepared synthetically was investigated. The experiments in which Amberlite IRA 743, boron specific resin was used were carried out in a column reactor. The bed volume of resin, boron concentration, flow rate and temperature were selected as experimental parameters. The experimental results showed that percent of boron removal increased with increasing amount of resin and with decreasing boron concentration in the solution. Boron removal decreased with increasing of flow rate and the effect of temperature on the percent of total boron removal increased the boron removal rate. As a result, it was seen that about 99% of boron in the wastewater could be removed at optimum conditions.

  3. Whole Core Transport Calculation Methodology for a Hexagonal Core

    Energy Technology Data Exchange (ETDEWEB)

    Cho, J. Y.; Kim, K. S.; Lee, C. C.; Zee, S. Q.; Joo, H. G

    2007-07-15

    This report discusses the hexagonal module implemented to the DeCART code and the performance of them. The implemented hexagonal module includes the hexagonal ray tracing and the CMFD acceleration modules. The performance of the implemented hexagonal module is examined for 4 tests of: (1) CMFD acceleration test, (2) the accuracy test of the hexagonal module, (3) the performance test for 2-D NGNP problem and (4) the applicability test for 3-D NGNP problem. The features of the implemented hexagonal modules are: (1) The Modular ray tracing scheme based on a hexagonal assembly and a path linking scheme between the modular rays. (2) Segment generation based on the structure unit. (3) Cell ray approximation: This feature is developed to reduce the memory required to store the segment information. (4) Modified cycle ray scheme that begins the ray tracing at a given surface and finishes if the reflected ray meets the starting surface. This feature is developed to reduce the memory required for the angular flux at the core boundary. (5) Fixed assembly geometry. The pin geometry of the single pin per assembly problem is different from that of the multi-pin problem. The core geometry of a single assembly problem is also different from that of the multi-assembly problem. (6) CMFD module based on unstructured cell. This feature is to deal with the irregular gap cells that are positioned at the assembly boundaries. The examination results of the 4 tests can be summarized as: (1) The CMFD acceleration test shows that the CMFD module speedups about greater than 200 for the core problem. (2) The accuracy test shows that the hexagonal MOC module produces an accurate solution of less than 60 pcm of eigenvalue and less than 2 % of local pin power errors. (3) The performance test for 2-D NGNP problem shows that the implemented hexagonal module works soundly and produces a reasonable solution by cooperating with the existing DeCART library and the other modules. (4) The applicability

  4. Gold nanorods grown on microgels leading to hexagonal nanostructures.

    Science.gov (United States)

    Kumar, V R Rajeev; Samal, A K; Sreeprasad, T S; Pradeep, T

    2007-08-14

    Hexagonal patterns of gold nanorods were made by assembling gold nanorod-coated poly(N-isopropyl acrylamide) microgels. The required population of nanorods on the microgels was achieved by attaching nanoparticle seeds on the latter and growing them to nanorods. The various materials prepared were characterized by UV-vis spectroscopy and transmission electron microscopy. Similar experiments with nanoparticle-coated or prefabricated nanorod-coated microgels did not give such hexagonal patterns. We suggest that the interlocking of nanorods leads to these regular structures. This is the first report of a solution phase method for assembling nanorods into a hexagonal pattern. PMID:17637011

  5. Multilayer DNA Origami Packed on Hexagonal and Hybrid Lattices

    DEFF Research Database (Denmark)

    Ke, Yonggang; Voigt, Niels Vinther; Shih, William M.;

    2012-01-01

    . Here we report successful folding of multilayer DNA origami with helices arranged on a close-packed hexagonal lattice. This arrangement yields a higher density of helical packing and therefore higher resolution of spatial addressing than has been shown previously. We also demonstrate hybrid multilayer...... DNA origami with honeycomb-lattice, square-lattice, and hexagonal-lattice packing of helices all in one design. The availability of hexagonal close-packing of helices extends our ability to build complex structures using DNA nanotechnology....

  6. Defect Chaos of Oscillating Hexagons in Rotating Convection

    CERN Document Server

    Echebarria, B; Echebarria, Blas; Riecke, Hermann

    2000-01-01

    Using coupled Ginzburg-Landau equations, the dynamics of hexagonal patterns with broken chiral symmetry are investigated, as they appear in rotating non-Boussinesq or surface-tension-driven convection. We find that close to the secondary Hopf bifurcation to oscillating hexagons the dynamics are well described by a single complex Ginzburg-Landau equation (CGLE) coupled to the phases of the hexagonal pattern. At the bandcenter these equations reduce to the usual CGLE and the system exhibits defect chaos. Away from the bandcenter a transition to a frozen vortex state is found.

  7. Instabilities of Hexagonal Patterns with Broken Chiral Symmetry

    CERN Document Server

    Echebarria, B; Echebarria, Blas; Riecke, Hermann

    1999-01-01

    Three coupled Ginzburg-Landau equations for hexagonal patterns with broken chiral symmetry are investigated. They are relevant for the dynamics close to onset of rotating non-Boussinesq or surface-tension-driven convection. Steady and oscillatory, long- and short-wave instabilities of the hexagons are found. For the long-wave behavior coupled phase equations are derived. Numerical simulations of the Ginzburg-Landau equations indicate bistability between spatio-temporally chaotic patterns and stable steady hexagons. The chaotic state can, however, not be described properly with the Ginzburg-Landau equations.

  8. A Hexagonal multiband fractal antenna using for wireless applications

    Directory of Open Access Journals (Sweden)

    Amanpreet Kaur

    2012-09-01

    Full Text Available In this paper, a multiband Fractal antenna having the shape of hexagonal is proposed. This hexagonal antenna is used for different wireless applications. Three iterations of the hexagonal fractal multiband antenna are examined. With this structure it is possible to configure the multiband frequency at various bands and return loss to obtain high gain. The Computer Simulation Technology Microwave Studio(CST MWS software was used to design and analyze the antenna for different wireless applications at range 1-6GHz.

  9. The boron trifluoride nitromethane adduct

    Science.gov (United States)

    Ownby, P. Darrell

    2004-02-01

    The separation of the boron isotopes using boron trifluoride·organic-donor, Lewis acid·base adducts is an essential first step in preparing 10B enriched and depleted crystalline solids so vital to nuclear studies and reactor applications such as enriched MgB 2, boron carbide, ZrB 2, HfB 2, aluminum boron alloys, and depleted silicon circuits for radiation hardening and neutron diffraction crystal structure studies. The appearance of this new adduct with such superior properties demands attention in the continuing search for more effective and efficient means of separation. An evaluation of the boron trifluoride nitromethane adduct, its thermodynamic and physical properties related to large-scale isotopic separation is presented. Its remarkably high separation factor was confirmed to be higher than the expected theoretical value. However, the reportedly high acid/donor ratio was proven to be an order of magnitude lower. On-going research is determining the crystal structure of deuterated and 11B enriched 11BF 3·CD 3NO 2 by X-ray and neutron diffraction.

  10. Preparation of Poly(p-phenylene sulfi de)/Carbon Composites with Enhanced Thermal Conductivity and Electrical Insulativity via Hybrids of Boron Nitride and Carbon Fillers

    Institute of Scientific and Technical Information of China (English)

    WU Jieli; WANG Jinwen; CHEN Feng

    2015-01-01

    The present work enhanced the thermal conductivity of poly(p-phenylene sulfi de)/expanded graphites and poly(p-phenylene sulfi de)/carbon nanotubes, by incorporating composites with hexagonal boron nitride, which simultaneously succeeded in raising the electrical conductivity of the systems. A two-step mechanical processing method which includes rotating solid-state premixing and inner mixing was adopted to improve dispersion of the hybrids, contributing to the formation of an interspered thermal conductive network. Similar synergic effect in thermal conductivity enhancement was discovered in the hybrid systems regardless of the dimension difference between the two carbonfi llers. Such is postulated to be the one satisfying advantage generated by the afore-mentioned network; the other is the insulativity of the hybrid systems given by the effective blockage of hexagonal boron nitride as an insulating material in our network.

  11. Boron doping a semiconductor particle

    Science.gov (United States)

    Stevens, Gary Don; Reynolds, Jeffrey Scott; Brown, Louanne Kay

    1998-06-09

    A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

  12. Structures, stability, mechanical and electronic properties of a-boron and its twined brother a*-boron

    OpenAIRE

    He, Chaoyu; Zhong, Jianxin

    2013-01-01

    The structures, stability, mechanical and electronic properties of a-boron and its twined brother a*-boron have been studied by first-principles calculations. Both a-boron and a*-boron consist of equivalent icosahedra B12 clusters in different connecting configurations of "3S-6D-3S" and "2S-6D-4S", respectively. The total energy calculations show that a*-boron is less stable than a-boron but more favorable than beta-boron and Gamma-boron at zero pressure. Both a-boron and a*-boron are confirm...

  13. Bifurcation theory for hexagonal agglomeration in economic geography

    CERN Document Server

    Ikeda, Kiyohiro

    2014-01-01

    This book contributes to an understanding of how bifurcation theory adapts to the analysis of economic geography. It is easily accessible not only to mathematicians and economists, but also to upper-level undergraduate and graduate students who are interested in nonlinear mathematics. The self-organization of hexagonal agglomeration patterns of industrial regions was first predicted by the central place theory in economic geography based on investigations of southern Germany. The emergence of hexagonal agglomeration in economic geography models was envisaged by Krugman. In this book, after a brief introduction of central place theory and new economic geography, the missing link between them is discovered by elucidating the mechanism of the evolution of bifurcating hexagonal patterns. Pattern formation by such bifurcation is a well-studied topic in nonlinear mathematics, and group-theoretic bifurcation analysis is a well-developed theoretical tool. A finite hexagonal lattice is used to express uniformly distri...

  14. Preparation and characterization of hexagonal close-packed Ni nanoparticles

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Hexagonal close-packed Ni nanoparticles were synthesized using a heat-treating technique with the precursors prepared by the sol-gel method.The synthesis condition,structure,and morphology of the samples were characterized and analysed by thermogravimetric analysis (TG),differential thermal analysis (DTA),X-ray diffraction (XRD) and transmission electron microscopy (TEM).Results indicate that the hexagonal close packed Ni nanoparticles were synthesized at a heat-treating temperature of 300℃.The cell constants are calculated at a=0.2652 nm and c=0.4334 nm.The average grain size of the hexagonal close-packed Ni particles evaluated by Scherrer equation is about 12 nm.The phase transformation from a hexagonal close-packed Ni to a face-centered cubic Ni structure occurred when the heat-treating temperature was increased.

  15. Investigation of optical, structural and morphological properties of nanostructured boron doped TiO2 thin films

    Indian Academy of Sciences (India)

    Savaş Sönmezoǧlu; Banu Erdoǧan; İskender Askeroǧlu

    2013-12-01

    Pure and different ratios (1, 3, 5, 7 and 10%) of boron doped TiO2 thin films were grown on the glass substrate by using sol–gel dip coating method having some benefits such as basic and easy applicability compared to other thin film production methods. To investigate the effect of boron doped on the physical properties of TiO2, structural, morphological and optical properties of growth thin films were examined. 1% boron-doping has no effect on optical properties of TiO2 thin film; however, optical properties vary with > 1%. From X-ray diffraction spectra, it is seen that TiO2 thin films together with doping of boron were formed along with TiB2 hexagonal structure having (111) orientation, B2O3 cubic structure having (310) orientation, TiB0.024O2 tetragonal structure having rutile phase (110) orientation and polycrystalline structures. From SEM images, it is seen that particles together with doping of boron have homogeneously distributed and held onto surface.

  16. Bounds for the connective constant of the hexagonal lattice

    Energy Technology Data Exchange (ETDEWEB)

    Alm, S E; Parviainen, R [Department of Mathematics, Uppsala University, Box 480, 75106 Uppsala (Sweden)

    2004-01-23

    We give improved bounds for the connective constant of the hexagonal lattice. The lower bound is found by using Kesten's method of irreducible bridges and by determining generating functions for bridges on one-dimensional lattices. The upper bound is obtained as the largest eigenvalue of a certain transfer matrix. Using a relation between the hexagonal and the (3.12{sup 2}) lattices, we also give bounds for the connective constant of the latter lattice.

  17. Thermal conductivity of boron carbides

    Science.gov (United States)

    Wood, C.; Emin, D.; Gray, P. E.

    1985-01-01

    Knowledge of the thermal conductivity of boron carbide is necessary to evaluate its potential for high-temperature thermoelectric energy conversion applications. Measurements have been conducted of the thermal diffusivity of hot-pressed boron carbide BxC samples as a function of composition (x in the range from 4 to 9), temperature (300-1700 K), and temperature cycling. These data, in concert with density and specific-heat data, yield the thermal conductivities of these materials. The results are discussed in terms of a structural model that has been previously advanced to explain the electronic transport data. Some novel mechanisms for thermal conduction are briefly discussed.

  18. Mechanical properties of boron coatings

    International Nuclear Information System (INIS)

    Internal stress of coatings will cause reliability problems, such as adhesion failure and peeling. We measured the internal stress in boron coatings, which was prepared by the ion plating method, with an apparatus based on the optically levered laser technique. The boron coatings exhibited large compressive stress in the range from -0.5 GPa to -2.6 GPa. It was found that these compressive stresses were decreasing functions of the deposition rate and were increasing functions of the ion bombardment energy. ((orig.))

  19. de Haas-van Alphen investigations of nonmagnetic boron carbide superconductors

    International Nuclear Information System (INIS)

    The dissertation presents de Haas-van Alphen investigations on the nonmagnetic boron carbide superconductors LuNi2B2C and YNi2B2C. From the quantum oscillations in the normal conductivity phase, in combination with band structure calculations, information was obtained on the distributed Fermi surface architecture and on the electron-phonon coupling of the boron carbides. The coupling is strongly anisotropic and dependent on the Fermi surfaces. This suggests a multiband mechanism of superconductivity in this material class. Further, de Haas-van-Alphen oscillations of several Fermi surfaces were observed below Bc2 in the deep Shubnikov phase, whose behaviour cannot be described by existing theories. It may be assumed, however, that the existence of oscillations far below Bc2 suggests the existence of electronic states in the Shubnikov phase. (orig.)

  20. Spin precession in anisotropic cosmologies

    Energy Technology Data Exchange (ETDEWEB)

    Kamenshchik, A.Yu. [Universita di Bologna, Dipartimento di Fisica e Astronomia, Bologna (Italy); L. D. Landau Institute for Theoretical Physics, Moscow (Russian Federation); INFN, Bologna (Italy); Teryaev, O.V. [Joint Institute for Nuclear Research, Bogoliubov Laboratory of Theoretical Physics, Dubna (Russian Federation); Lomonosov Moscow State University, Moscow (Russian Federation)

    2016-05-15

    We consider the precession of a Dirac particle spin in some anisotropic Bianchi universes. This effect is present already in the Bianchi-I universe. We discuss in some detail the geodesics and the spin precession for both the Kasner and the Heckmann-Schucking solutions. In the Bianchi-IX universe the spin precession acquires the chaotic character due to the stochasticity of the oscillatory approach to the cosmological singularity. The related helicity flip of fermions in the very early universe may produce the sterile particles contributing to dark matter. (orig.)

  1. Anisotropic and nonlinear optical waveguides

    CERN Document Server

    Someda, CG

    1992-01-01

    Dielectric optical waveguides have been investigated for more than two decades. In the last ten years they have had the unique position of being simultaneously the backbone of a very practical and fully developed technology, as well as an extremely exciting area of basic, forefront research. Existing waveguides can be divided into two sets: one consisting of waveguides which are already in practical use, and the second of those which are still at the laboratory stage of their evolution. This book is divided into two separate parts: the first dealing with anisotropic waveguides, an

  2. New charged anisotropic compact models

    Science.gov (United States)

    Kileba Matondo, D.; Maharaj, S. D.

    2016-07-01

    We find new exact solutions to the Einstein-Maxwell field equations which are relevant in the description of highly compact stellar objects. The relativistic star is charged and anisotropic with a quark equation of state. Exact solutions of the field equations are found in terms of elementary functions. It is interesting to note that we regain earlier quark models with uncharged and charged matter distributions. A physical analysis indicates that the matter distributions are well behaved and regular throughout the stellar structure. A range of stellar masses are generated for particular parameter values in the electric field. In particular the observed mass for a binary pulsar is regained.

  3. Remarks on inhomogeneous anisotropic cosmology

    Science.gov (United States)

    Kaya, Ali

    2016-08-01

    Recently a new no-global-recollapse argument was given for some inhomogeneous and anisotropic cosmologies that utilizes surface deformation by the mean curvature flow. In this paper we discuss important properties of the mean curvature flow of spacelike surfaces in Lorentzian manifolds. We show that singularities may form during cosmic evolution, and the theorems forbidding the global recollapse lose their validity. The time evolution of the spatial scalar curvature that may kinematically prevent the recollapse is determined in normal coordinates, which shows the impact of inhomogeneities explicitly. Our analysis indicates a caveat in numerical solutions that give rise to inflation.

  4. Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film

    Science.gov (United States)

    Kurachi, Ikuo; Yoshioka, Kentaro

    2015-09-01

    An analytical boron diffusivity model in silicon for thermal diffusion from a boron silicate glass (BSG) film has been proposed in terms of enhanced diffusion due to boron-silicon interstitial pair formation. The silicon interstitial generation is considered to be a result of the silicon kick-out mechanism by the diffused boron at the surface. The additional silicon interstitial generation in the bulk silicon is considered to be the dissociation of the diffused pairs. The former one causes the surface boron concentration dependent diffusion. The latter one causes the local boron concentration dependent diffusion. The calculated boron profiles based on the diffusivity model are confirmed to agree with the actual diffusion profiles measured by secondary ion mass spectroscopy (SIMS) for a wide range of the BSG boron concentration. This analytical diffusivity model is a helpful tool for p+ boron diffusion process optimization of n-type solar cell manufacturing.

  5. Analysis of boronized wall in LHD

    International Nuclear Information System (INIS)

    Boronization has been carried out in some experimental fusion devices as one of wall conditioning Methods. The well-known merits of the boronization are as follows: 1) coated-boron on the first wall has strong gettering function for oxygen impurities and oxygen has been kept into boron films as a boron-oxide and 2) boron film covers first wall with apparently low Z materials facing the plasma. However, an operation scenario of boronization for next generation devices such as ITER is not optimized. In this paper, we discuss an optimized method of coated film uniformity in a wide area and a lifetime of boron film as an oxygen getter using experimental data in the large helical device (LHD). In LHD, boronization by glow discharges has been carried out a few times during each experimental campaign. Helium-diborane mixtured gas is used and plasma facing components (PFM) are stainless steel (SS) for the first wall and carbon for the divertor plates kept in the room temperature. Material probes made of SS316 and Si were installed in the vacuum vessel and exposed during the experimental campaign. Depth profiles of their impurities were analyzed using the X-ray Photoelectron Spectroscopy (XPS) and the Auger electron spectroscopy (AES). Two types of gettering process by boron film have been investigated. One is the process during boronization and the other is that after boronization. Concerning a lifetime of boron film, the distribution of oxygen near the top surface region (0 to 20 nm) indicates a process of oxygen gettering, it shows a contribution after boronization. In this paper, these kinds of process using material probes are shown. (authors)

  6. Boron Poisoning of Plutonium Solutions

    International Nuclear Information System (INIS)

    The results of a theoretical investigation into the possible relaxation of criticality concentration limits in wet chemical reprocessing plants, due to the introduction of boron poisoning, are reported. The following systems were considered: 1. 1 in. stainless steel tubes filled with boron carbide at various pitches in homogeneous mixtures of 239Pu (NO3)4, 5H2O and water. 2. 1 in. and 2 in borosilicate glass Raschig rings in homogeneous mixtures of 239Pu (NO3)4, 5H2O and water. 3. The concentration of natural boron required for k∞ = 1 in homogeneous mixtures of 239Pu-B-H2O. The method of calculation was Monte Carlo using the GEM code with Nuclear Data File cross-sections. The Raschig rings used are those commercially available. The core model consisted of a cubic arrangement of unit cubes of solution within each of which a Raschig ring was centrally placed. The arrangement was such that the rings were regularly stacked with axes parallel, but the side of the unit cube was fixed to preserve the random packing density. Comparison is made with other reported results on boron poisoning. (author)

  7. Advanced microstructure of boron carbide.

    Science.gov (United States)

    Werheit, Helmut; Shalamberidze, Sulkhan

    2012-09-26

    The rhombohedral elementary cell of the complex boron carbide structure is composed of B(12) or B(11)C icosahedra and CBC, CBB or B□B (□, vacancy) linear arrangements, whose shares vary depending on the actual chemical compound. The evaluation of the IR phonon spectra of isotopically pure boron carbide yields the quantitative concentrations of these components within the homogeneity range. The structure formula of B(4.3)C at the carbon-rich limit of the homogeneity range is (B(11)C) (CBC)(0.91) (B□B)(0.09) (□, vacancy); and the actual structure formula of B(13)C(2) is (B(12))(0.5)(B(11)C)(0.5)(CBC)(0.65)(CBB)(0.16) (B□B)(0.19), and deviates fundamentally from (B(12))CBC, predicted by theory to be the energetically most favourable structure of boron carbide. In reality, it is the most distorted structure in the homogeneity range. The spectra of (nat)B(x)C make it evident that boron isotopes are not randomly distributed in the structure. However, doping with 2% silicon brings about a random distribution.

  8. Boron isotopes in geothermal systems

    International Nuclear Information System (INIS)

    Boron is a highly mobile element and during water-rock reactions, boron is leached out of rocks with no apparent fractionation. In geothermal systems where the water recharging the systems are meteoric in origin, the B isotope ratio of the geothermal fluid reflects the B isotope ratio of the rocks. Seawater has a distinctive B isotope ratio and where seawater recharges the geothermal system, the B isotope ratio of the geothermal system reflects the mixing of rock derived B and seawater derived B. Any deviations of the actual B isotope ratio of a mixture reflects subtle differences in the water-rock ratios in the cold downwelling limb of the hydrothermal system. This paper will present data from a variety of different geothermal systems, including New Zealand; Iceland; Yellowston, USA; Ibusuki, Japan to show the range in B isotope ratios in active geothermal systems. Some of these systems show well defined mixing trends between seawater and the host rocks, whilst others show the boron isotope ratios of the host rock only. In geothermal systems containing high amounts of CO2 boron isotope ratios from a volatile B source can also be inferred. (auth)

  9. Electromagnetism on anisotropic fractal media

    Science.gov (United States)

    Ostoja-Starzewski, Martin

    2013-04-01

    Basic equations of electromagnetic fields in anisotropic fractal media are obtained using a dimensional regularization approach. First, a formulation based on product measures is shown to satisfy the four basic identities of the vector calculus. This allows a generalization of the Green-Gauss and Stokes theorems as well as the charge conservation equation on anisotropic fractals. Then, pursuing the conceptual approach, we derive the Faraday and Ampère laws for such fractal media, which, along with two auxiliary null-divergence conditions, effectively give the modified Maxwell equations. Proceeding on a separate track, we employ a variational principle for electromagnetic fields, appropriately adapted to fractal media, so as to independently derive the same forms of these two laws. It is next found that the parabolic (for a conducting medium) and the hyperbolic (for a dielectric medium) equations involve modified gradient operators, while the Poynting vector has the same form as in the non-fractal case. Finally, Maxwell's electromagnetic stress tensor is reformulated for fractal systems. In all the cases, the derived equations for fractal media depend explicitly on fractal dimensions in three different directions and reduce to conventional forms for continuous media with Euclidean geometries upon setting these each of dimensions equal to unity.

  10. Raman spectroscopy of boron carbides and related boron-containing materials

    International Nuclear Information System (INIS)

    Raman spectra of crystalline boron, boron carbide, boron arsenide (B12As2), and boron phosphide (B12P2) are reported. The spectra are compared with other boron-containing materials containing the boron icosahedron as a structural unit. The spectra exhibit similar features some of which correlate with the structure of the icosahedral units of the crystals. The highest Raman lines appear to be especially sensitive to the B-B distance in the polar triangle of the icosahedron. Such Raman structural markers are potentially useful in efforts to tailor electronic properties of these high temperature semiconductors and thermoelectrics

  11. Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor.

    Science.gov (United States)

    Park, Nahee; Kang, Haeyong; Park, Jeongmin; Lee, Yourack; Yun, Yoojoo; Lee, Jeong-Ho; Lee, Sang-Goo; Lee, Young Hee; Suh, Dongseok

    2015-11-24

    The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the V(G) sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics. PMID:26487348

  12. ANISOTROPIC POLARIZATION TENSORS FOR ELLIPSES AND ELLIPSOIDS

    Institute of Scientific and Technical Information of China (English)

    Hyeonbae Kang; Kyoungsun Kim

    2007-01-01

    In this paper we present a systematic way of computing the polarization tensors,anisotropic as well as isotropic, based on the boundary integral method. We then use this method to compute the anisotropic polarization tensor for ellipses and ellipsoids. The computation reveals the pair of anisotropy and ellipses which produce the same polarization tensors.

  13. Anisotropic weak Hardy spaces and interpolation theorems

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    In this paper, the authors establish the anisotropic weak Hardy spaces associated with very general discrete groups of dilations. Moreover, the atomic decomposition theorem of the anisotropic weak Hardy spaces is also given. As some applications of the above results, the authors prove some interpolation theorems and obtain the boundedness of the singular integral operators on these Hardy spaces.

  14. ANISOTROPIC BIQUADRATIC ELEMENT WITH SUPERCLOSE RESULT

    Institute of Scientific and Technical Information of China (English)

    Dongyang SHI; Shipeng MAO; Hui LIANG

    2006-01-01

    The main aim of this paper is to study the convergence of biquadratic finite element for the second order problem on anisotropic meshes. By using some novel approaches and techniques, the optimal error estimates are obtained. At the same time, the anisotropic superclose results are also achieved. Furthermore, the numerical results are given to demonstrate our theoretical analysis.

  15. Efficient Wavefield Extrapolation In Anisotropic Media

    KAUST Repository

    Alkhalifah, Tariq

    2014-07-03

    Various examples are provided for wavefield extrapolation in anisotropic media. In one example, among others, a method includes determining an effective isotropic velocity model and extrapolating an equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield. The effective isotropic velocity model can be based upon a kinematic geometrical representation of an anisotropic, poroelastic or viscoelastic wavefield. Extrapolating the equivalent propagation can use isotopic, acoustic or elastic operators based upon the determined effective isotropic velocity model. In another example, non-transitory computer readable medium stores an application that, when executed by processing circuitry, causes the processing circuitry to determine the effective isotropic velocity model and extrapolate the equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield. In another example, a system includes processing circuitry and an application configured to cause the system to determine the effective isotropic velocity model and extrapolate the equivalent propagation of an anisotropic, poroelastic or viscoelastic wavefield.

  16. Multidisciplinary approach to cylindrical anisotropic metamaterials

    International Nuclear Information System (INIS)

    Anisotropic characteristics of cylindrically corrugated microstructures are analyzed in terms of their acoustic and electromagnetic (EM) behavior paying special attention to their differences and similarities. A simple analytical model has been developed using effective medium theory to understand the anisotropic features of both types of waves in terms of radial and angular components of the wave propagation velocity. The anisotropic constituent parameters have been obtained by measuring the resonances of cylindrical cavities, as well as from numerical simulations. This permits one to characterize propagation of acoustic and EM waves and to compare the fundamental anisotropic features generated by the corrugated effective medium. Anisotropic coefficients match closely in both physics fields but other relevant parameters show significant differences in the behavior of both types of waves. (paper)

  17. Designing Anisotropic Inflation with Form Fields

    CERN Document Server

    Ito, Asuka

    2015-01-01

    We study inflation with anisotropic hair induced by form fields. In four dimensions, the relevant form fields are gauge (one-form) fields and two-form fields. Assuming the exponential form of potential and gauge kinetic functions, we find new exact power-law solutions endowed with anisotropic hair. We also explore the phase space of anisotropic inflation and find fixed points corresponding to the exact power-law solutions. Moreover, we perform the stability analysis around the fixed points to reveal the structure of the phase space. It turns out that one of the fixed points becomes an attractor and others (if any) are saddle points. In particular, the one corresponding to anisotropic inflation becomes an attractor when it exists. We also argue that various anisotropic inflation models can be designed by choosing coupling constants.

  18. Designing anisotropic inflation with form fields

    Science.gov (United States)

    Ito, Asuka; Soda, Jiro

    2015-12-01

    We study inflation with anisotropic hair induced by form fields. In four dimensions, the relevant form fields are gauge (one-form) fields and two-form fields. Assuming the exponential form of potential and gauge kinetic functions, we find new exact power-law solutions endowed with anisotropic hair. We also explore the phase space of anisotropic inflation and find fixed points corresponding to the exact power-law solutions. Moreover, we perform the stability analysis around the fixed points to reveal the structure of the phase space. It turns out that one of the fixed points becomes an attractor and others (if any) are saddle points. In particular, the one corresponding to anisotropic inflation becomes an attractor when it exists. We also argue that various anisotropic inflation models can be designed by choosing coupling constants.

  19. Low pressure synthesis of boron nitride with(C2H5)2O·BF3 and Li3N precursor

    Institute of Scientific and Technical Information of China (English)

    WANG Shao-bo; XU Xiao-wei; FAN Hui-li; LI Yu-ping

    2005-01-01

    Cubic boron nitride(c-BN) was synthesized through benzene thermal method at a lower temperature of 300 ℃ by selecting liquid(C2H5)2O·BF3 and Li3N as reactants. Hexagonal boron nitride(h-BN) and orthorhombic boron nitride(o-BN) were also obtained. The samples were characterized by X-ray powder diffractometry and Fourier transformation infrared spectroscopy. The results show that all the BF3, BCl3 and BBr3 in the same family compounds can react with Li3N to synthesize BN since the strongest bond of B-F can be broken. Compared with BBr3, liquid (C2H5)2O·BF3 is cheaper, less toxic and more convenient to operate. Li3N not only provides nitrogen source but also has catalytic effect on accelerating the formation of c-BN at low temperature and pressure.

  20. Inserting Stress Analysis of Combined Hexagonal Aluminum Honeycombs

    Directory of Open Access Journals (Sweden)

    Xiangcheng Li

    2016-01-01

    Full Text Available Two kinds of hexagonal aluminum honeycombs are tested to study their out-of-plane crushing behavior. In the tests, honeycomb samples, including single hexagonal aluminum honeycomb (SHAH samples and two stack-up combined hexagonal aluminum honeycombs (CHAH samples, are compressed at a fixed quasistatic loading rate. The results show that the inserting process of CHAH can erase the initial peak stress that occurred in SHAH. Meanwhile, energy-absorbing property of combined honeycomb samples is more beneficial than the one of single honeycomb sample with the same thickness if the two types of honeycomb samples are completely crushed. Then, the applicability of the existing theoretical model for single hexagonal honeycomb is discussed, and an area equivalent method is proposed to calculate the crushing stress for nearly regular hexagonal honeycombs. Furthermore, a semiempirical formula is proposed to calculate the inserting plateau stress of two stack-up CHAH, in which structural parameters and mechanics properties of base material are concerned. The results show that the predicted stresses of three kinds of two stack-up combined honeycombs are in good agreement with the experimental data. Based on this study, stress-displacement curve of aluminum honeycombs can be designed in detail, which is very beneficial to optimize the energy-absorbing structures in engineering fields.

  1. Warm anisotropic inflationary universe model

    Energy Technology Data Exchange (ETDEWEB)

    Sharif, M.; Saleem, Rabia [University of the Punjab, Department of Mathematics, Lahore (Pakistan)

    2014-02-15

    This paper is devoted to the study of warm inflation using vector fields in the background of a locally rotationally symmetric Bianchi type I model of the universe. We formulate the field equations, and slow-roll and perturbation parameters (scalar and tensor power spectra as well as their spectral indices) in the slow-roll approximation. We evaluate all these parameters in terms of the directional Hubble parameter during the intermediate and logamediate inflationary regimes by taking the dissipation factor as a function of the scalar field as well as a constant. In each case, we calculate the observational parameter of interest, i.e., the tensor-scalar ratio in terms of the inflaton. The graphical behavior of these parameters shows that the anisotropic model is also compatible with WMAP7 and the Planck observational data. (orig.)

  2. Warm Anisotropic Inflationary Universe Model

    CERN Document Server

    Sharif, M

    2014-01-01

    This paper is devoted to study the warm inflation using vector fields in the background of locally rotationally symmetric Bianchi type I universe model. We formulate the field equations, slow-roll and perturbation parameters (scalar and tensor power spectra as well as their spectral indices) under slow-roll approximation. We evaluate all these parameters in terms of directional Hubble parameter during intermediate and logamediate inflationary regimes by taking the dissipation factor as a function of scalar field as well as a constant. In each case, we calculate the observational parameter of interest, i.e., tensor-scalar ratio in terms of inflation. The graphical behavior of these parameters shows that the anisotropic model is also compatible with WMAP7 and Planck observational data.

  3. Anisotropic scaling of magnetohydrodynamic turbulence

    CERN Document Server

    Horbury, T S; Oughton, S

    2008-01-01

    We present a quantitative estimate of the anisotropic power and scaling of magnetic field fluctuations in inertial range magnetohydrodynamic turbulence, using a novel wavelet technique applied to spacecraft measurements in the solar wind. We show for the first time that, when the local magnetic field direction is parallel to the flow, the spacecraft-frame spectrum has a spectral index near 2. This can be interpreted as the signature of a population of fluctuations in field-parallel wavenumbers with a $k_{\\parallel}^{-2}$ spectrum but is also consistent with the presence of a "critical balance" style turbulent cascade. We also find, in common with previous studies, that most of the power is contained in wavevectors at large angles to the local magnetic field and that this component of the turbulence has a spectral index of 5/3.

  4. Gravitational baryogenesis after anisotropic inflation

    Science.gov (United States)

    Fukushima, Mitsuhiro; Mizuno, Shuntaro; Maeda, Kei-ichi

    2016-05-01

    The gravitational baryogensis may not generate a sufficient baryon asymmetry in the standard thermal history of the Universe when we take into account the gravitino problem. Hence, it has been suggested that anisotropy of the Universe can enhance the generation of the baryon asymmetry through the increase of the time change of the Ricci scalar curvature. We study the gravitational baryogenesis in the presence of anisotropy, which is produced at the end of an anisotropic inflation. Although we confirm that the generated baryon asymmetry is enhanced compared with the original isotropic cosmological model, taking into account the constraint on the anisotropy by the recent CMB observations, we find that it is still difficult to obtain the observed baryon asymmetry only through the gravitational baryogenesis without suffering from the gravitino problem.

  5. I-Love-Q Anisotropically

    CERN Document Server

    Yagi, Kent

    2015-01-01

    Certain physical quantities that characterize neutron stars and quark stars (e.g. their mass, spin angular momentum and quadrupole moment) are interrelated in a way that is approximately insensitive to their internal structure. Such approximately universal relations are useful to break degeneracies in data analysis for future radio, X-ray and gravitational wave observations. Although the pressure inside compact stars is most likely nearly isotropic, certain scenarios have been put forth that suggest otherwise, for example due to phase transitions. We here investigate whether pressure anisotropy affects the approximate universal relations and whether it prevents their use in future observations. We achieve this by numerically constructing slowly-rotating and tidally-deformed, anisotropic, compact stars in General Relativity to third order in spin. We find that anisotropy affects the universal relations only weakly; the relations become less universal by a factor of 1.5-3 relative to the isotropic case, but rem...

  6. Gravitational Baryogenesis after Anisotropic Inflation

    CERN Document Server

    Fukushima, Mitsuhiro; Maeda, Kei-ichi

    2016-01-01

    The gravitational baryogensis may not generate a sufficient baryon asymmetry in the standard thermal history of the Universe when we take into account the gravitino problem. Hence it has been suggested that anisotropy of the Universe can enhance the generation of the baryon asymmetry through the increase of the time change of the Ricci scalar curvature. We study the gravitational baryogenesis in the presence of anisotropy, which is produced at the end of an anisotropic inflation. Although we confirm that the generated baryon asymmetry is enhanced compared with the original isotropic cosmological model, taking into account the constraint on the anisotropy by the recent CMB observations, we find that it is still difficult to obtain the observed baryon asymmetry only through the gravitational baryogenesis without suffering from the gravitino problem.

  7. Tunable complete photonic band gap in anisotropic photonic crystal slabs with non-circular air holes using liquid crystals

    Science.gov (United States)

    Fathollahi Khalkhali, T.; Bananej, A.

    2016-06-01

    In this study, we analyze the tunability of complete photonic band gap of square and triangular photonic crystal slabs composed of square and hexagonal air holes in anisotropic tellurium background with SiO2 as cladding material. The non-circular holes are infiltrated with liquid crystal. Using the supercell method based on plane wave expansion, we study the variation of complete band gap by changing the optical axis orientation of liquid crystal. Our numerical results show that noticeable tunability of complete photonic band gap can be obtained in both square and triangular structures with non-circular holes.

  8. The Anisotropic Geometrodynamics For Cosmology

    Science.gov (United States)

    Siparov, Sergey V.

    2009-05-01

    The classical geometrodynamics (GRT) and its modern features based on the use of the Fridman-Robertson-Walker type metrics are still unable to explain several important issues of extragalactic observations like flat rotation curves of the spiral galaxies, Tully-Fisher law, globular clusters behavior in comparisson to that of the stars belonging to the galactic plane etc. The chalenging problem of the Universe expansion acceleration stemming from the supernovae observations demands the existence of the repulsion forces which brings one to the choice between the cosmological constant and some quintessence. The popular objects of discussion are now still dark (matter and energy), nevertheless, they are supposed to correspond to more than 95% of the Universe which seems to be far from satisfactory. According to the equivalence principle we can not experimentally distinguish between the inertial forces and the gravitational ones. Since there exist the inertial forces depending on velocity (Coriolis), it seems plausible to explore the velocity dependent gravitational forces. From the mathematical point of view it means that we should use the anisotropic metric. It immediately turns out that the expression for the Einstein-Hilbert action changes in a natural way - contrary to the cases of f(R)-theories, additional scalar fields, arbitrary MOND functions etc.. We use the linear approximation for the metric and derive the generalized geodesics and the equation for the gravity force that contains not only the Newton-Einstein term. The relation between the obtained results and those of Lense-Thirring approach are discussed. The resulting anisotropic geometrodynamics includes all the results of the GRT and is used to give the explanation to the problems mentioned above. One of the impressive consequences is the possibility to explain the observed Hubble red shift not by the Doppler effect as usually but by the gravitational red shift originating from the metric anisotropy.

  9. Anisotropic microstructure near the sun

    International Nuclear Information System (INIS)

    Radio scattering observations provide a means of measuring a two-dimensional projection of the three-dimensional spatial spectrum of electron density, i.e., in the plane perpendicular to the line of sight. Earlier observations have shown that the microstructure at scales of the order of 10 km becomes highly field-aligned inside of 10 R· [Armstrong et al., 1990]. Earlier work has also shown that density fluctuations at scales larger than 1000 km have a Kolmogorov spectrum, whereas the smaller scale structure has a flatter spectrum and is considerably enhanced above the Kolmogorov ''background'' [Coles et al., 1991]. Here we present new observations made during 1990 and 1992. These confirm the earlier work, which was restricted to one source on a few days, but they suggest that the anisotropy changes abruptly near 6 R· which was not clear in the earlier data. The axial ratio measurements are shown on Figure 1 below. The new observations were made with a more uniform sampling of the spatial plane. They show that contours of constant correlation are elliptical. This is apparently inconsistent with the spatial correlation of the ISEE-3 magnetic field which shows a 'Maltese Cross' shape [Matthaeus et al., 1990]. However this inconsistency may be only apparent: the magnetic field and density correlations need not have the same shape; the scale of the magnetic field correlations is at least 4 orders of magnitude larger; they are much further from the sun; and they are point measurements whereas ours are path-integrated. We also made two simultaneous measurements, at 10 R·, of the anisotropy on scales of 200 to 4000 km. Significant anisotropy was seen on the smaller scales, but the larger scale structure was essentially isotropic. This suggests that the process responsible for the anisotropic microstructure is independent of the larger scale isotropic turbulence. It is then tempting to speculate that the damping of this anisotropic process inside of 6 R· contributes to

  10. Evolution of Moiré Profiles from van der Waals Superstructures of Boron Nitride Nanosheets.

    Science.gov (United States)

    Liao, Yunlong; Cao, Wei; Connell, John W; Chen, Zhongfang; Lin, Yi

    2016-01-01

    Two-dimensional (2D) van der Waals (vdW) superstructures, or vdW solids, are formed by the precise restacking of 2D nanosheet lattices, which can lead to unique physical and electronic properties that are not available in the parent nanosheets. Moiré patterns formed by the crystalline mismatch between adjacent nanosheets are the most direct features for vdW superstructures under microscopic imaging. In this article, transmission electron microscopy (TEM) observation of hexagonal Moiré patterns with unusually large micrometer-sized lateral areas (up to ~1 μm(2)) and periodicities (up to ~50 nm) from restacking of liquid exfoliated hexagonal boron nitride nanosheets (BNNSs) is reported. This observation was attributed to the long range crystallinity and the contaminant-free surfaces of these chemically inert nanosheets. Parallel-line-like Moiré fringes with similarly large periodicities were also observed. The simulations and experiments unambiguously revealed that the hexagonal patterns and the parallel fringes originated from the same rotationally mismatched vdW stacking of BNNSs and can be inter-converted by simply tilting the TEM specimen following designated directions. This finding may pave the way for further structural decoding of other 2D vdW superstructure systems with more complex Moiré images. PMID:27188697

  11. Magnetoresistance anisotropy in a hexagonal lattice of Co antidots obtained by thermal evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Chiolerio, Alessandro, E-mail: alessandro.chiolerio@polito.i [Physics Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, IT-10129 Torino (Italy); Allia, Paolo; Celasco, Edvige [Materials Science and Chemical Engineering Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, IT-10129 Torino (Italy); Martino, Paola [Physics Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, IT-10129 Torino (Italy); Spizzo, Federico [Physics Department and CNISM, Universita di Ferrara, Building C, Via Saragat 1, IT-44100 Ferrara (Italy); Celegato, Federica [Electromagnetism Division, INRIM, Strada delle Caccie 91, IT-10135 Torino (Italy)

    2010-05-15

    Patterned soft magnetic materials are eligible for use in magnetic random access memories. A hexagonal-lattice pattern of circular antidots was produced by optical lithography in a Co film. In order to test the effect of geometry on the local magnetisation configuration of such a structure, we performed room-temperature angle-resolved magnetisation measurements aimed to check the pinning of domain walls by the pattern's lattice. Magnetoresistance (MR) room-temperature measurements were performed at various angles between the magnetic field direction and the macroscopic electrical current vector, to clarify whether and how the local current density configuration affects the MR response. We found that the magnetoresistance is of anisotropic type (AMR) and has a local origin. Furthermore, the largely unsaturating behaviour of MR at high fields may be explained only by considering that tiny portions of the pattern constitute highly frustrated regions and align their magnetisation at rather high fields. A simplified model based on a local anisotropy term is shown to account for the experimental results for both M and MR.

  12. Jaguar Procedures for Detonation Behavior of Explosives Containing Boron

    Science.gov (United States)

    Stiel, L. I.; Baker, E. L.; Capellos, C.

    2009-12-01

    The Jaguar product library was expanded to include boron and boron containing products by analysis of Available Hugoniot and static volumetric data to obtain constants of the Murnaghan relationships for the components. Experimental melting points were also utilized to obtain the constants of the volumetric relationships for liquid boron and boron oxide. Detonation velocities for HMX—boron mixtures calculated with these relationships using Jaguar are in closer agreement with literature values at high initial densities for inert (unreacted) boron than with the completely reacted metal. These results indicate that the boron does not react near the detonation front or that boron mixtures exhibit eigenvalue detonation behavior (as shown by some aluminized explosives), with higher detonation velocities at the initial points. Analyses of calorimetric measurements for RDX—boron mixtures indicate that at high boron contents the formation of side products, including boron nitride and boron carbide, inhibits the detonation properties of the formulation.

  13. New approach for direct chemical synthesis of hexagonal Co nanoparticles

    Science.gov (United States)

    Abel, Frank M.; Tzitzios, Vasilis; Hadjipanayis, George C.

    2016-02-01

    In this paper, we explore the possibility of producing hexagonal Cobalt nanoparticles, with high saturation magnetization by direct chemical synthesis. The nanoparticles were synthesized by reduction of anhydrous cobalt (II) chloride by NaBH4 in tetraglyme at temperatures in the range of 200-270 °C under a nitrogen-hydrogen atmosphere. The reactions were done at high temperatures to allow for the formation of as-made hexagonal cobalt. The size of the particles was controlled by the addition of different surfactants. The best magnetic properties so far were obtained on spherical hexagonal Co nanoparticles with an average size of 45 nm, a saturation magnetization of 143 emu/g and coercivity of 500 Oe. the saturation magnetization and coercivity were further improved by annealing the Co nanoparticles leading to saturation magnetization of 160 emu/g and coercivity of 540 Oe.

  14. Ab initio engineering of materials with stacked hexagonal tin frameworks

    Science.gov (United States)

    Shao, Junping; Beaufils, Clément; Kolmogorov, Aleksey N.

    2016-01-01

    The group-IV tin has been hypothesized to possess intriguing electronic properties in an atom-thick hexagonal form. An attractive pathway of producing sizable 2D crystallites of tin is based on deintercalation of bulk compounds with suitable tin frameworks. Here, we have identified a new synthesizable metal distannide, NaSn2, with a 3D stacking of flat hexagonal layers and examined a known compound, BaSn2, with buckled hexagonal layers. Our ab initio results illustrate that despite being an exception to the 8-electron rule, NaSn2 should form under pressures easily achievable in multi-anvil cells and remain (meta)stable under ambient conditions. Based on calculated Z2 invariants, the predicted NaSn2 may display topologically non-trivial behavior and the known BaSn2 could be a strong topological insulator. PMID:27387140

  15. Prediction of boron carbon nitrogen phase diagram

    Science.gov (United States)

    Yao, Sanxi; Zhang, Hantao; Widom, Michael

    We studied the phase diagram of boron, carbon and nitrogen, including the boron-carbon and boron-nitrogen binaries and the boron-carbon-nitrogen ternary. Based on the idea of electron counting and using a technique of mixing similar primitive cells, we constructed many ''electron precise'' structures. First principles calculation is performed on these structures, with either zero or high pressures. For the BN binary, our calculation confirms that a rhmobohedral phase can be stablized at high pressure, consistent with some experimental results. For the BCN ternary, a new ground state structure is discovered and an Ising-like phase transition is suggested. Moreover, we modeled BCN ternary phase diagram and show continuous solubility from boron carbide to the boron subnitride phase.

  16. Synthesis of Boron Nanowires, Nanotubes, and Nanosheets

    Directory of Open Access Journals (Sweden)

    Rajen B. Patel

    2015-01-01

    Full Text Available The synthesis of boron nanowires, nanotubes, and nanosheets using a thermal vapor deposition process is reported. This work confirms previous research and provides a new method capable of synthesizing boron nanomaterials. The materials were made by using various combinations of MgB2, Mg(BH42, MCM-41, NiB, and Fe wire. Unlike previously reported methods, a nanoparticle catalyst and a silicate substrate are not required for synthesis. Two types of boron nanowires, boron nanotubes, and boron nanosheets were made. Their morphology and chemical composition were determined through the use of scanning electron microscopy, transmission electron microscopy, and electron energy loss spectroscopy. These boron-based materials have potential for electronic and hydrogen storage applications.

  17. Thermal conductivity of polymer composites with oriented boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Ahn, Hong Jun; Eoh, Young Jun [Department of Materials Engineering, Kyonggi University, Suwon (Korea, Republic of); Park, Sung Dae [Electronic Materials and Device Research Center, Korea Electronics Technology Institute, Seongnam (Korea, Republic of); Kim, Eung Soo, E-mail: eskim@kyonggi.ac.kr [Department of Materials Engineering, Kyonggi University, Suwon (Korea, Republic of)

    2014-08-20

    Highlights: • Thermal conductivity depended on the orientation of BN in the polymer matrices. • Hexagonal boron nitride (BN) particles were treated by C{sub 27}H{sub 27}N{sub 3}O{sub 2} and C{sub 14}H{sub 6}O{sub 8}. • Amphiphilic-agent-treated BN particles are more easily oriented in the composite. • BN/PVA composites with C{sub 14}H{sub 6}O{sub 8}-treated BN showed the highest thermal conductivity. • Thermal conductivity of the composites was compared with several theoretical models. - Abstract: Thermal conductivity of boron nitride (BN) with polyvinyl alcohol (PVA) and/or polyvinyl butyral (PVB) was investigated as a function of the degree of BN orientation, the numbers of hydroxyl groups in the polymer matrices and the amphiphilic agents used. The composites with in-plane orientation of BN showed a higher thermal conductivity than the composites with out-of-plane orientation of BN due to the increase of thermal pathway. For a given BN content, the composites with in-plane orientation of BN/PVA showed higher thermal conductivity than the composites with in-plane orientation of BN/PVB. This result could be attributed to the improved degree of orientation of BN, caused by a larger number of hydroxyl groups being present. Those treated with C{sub 14}H{sub 6}O{sub 8} amphiphilic agent demonstrated a higher thermal conductivity than those treated by C{sub 27}H{sub 27}N{sub 3}O{sub 2}. The measured thermal conductivity of the composites was compared with that predicted by the several theoretical models.

  18. Thermal conductivity of polymer composites with oriented boron nitride

    International Nuclear Information System (INIS)

    Highlights: • Thermal conductivity depended on the orientation of BN in the polymer matrices. • Hexagonal boron nitride (BN) particles were treated by C27H27N3O2 and C14H6O8. • Amphiphilic-agent-treated BN particles are more easily oriented in the composite. • BN/PVA composites with C14H6O8-treated BN showed the highest thermal conductivity. • Thermal conductivity of the composites was compared with several theoretical models. - Abstract: Thermal conductivity of boron nitride (BN) with polyvinyl alcohol (PVA) and/or polyvinyl butyral (PVB) was investigated as a function of the degree of BN orientation, the numbers of hydroxyl groups in the polymer matrices and the amphiphilic agents used. The composites with in-plane orientation of BN showed a higher thermal conductivity than the composites with out-of-plane orientation of BN due to the increase of thermal pathway. For a given BN content, the composites with in-plane orientation of BN/PVA showed higher thermal conductivity than the composites with in-plane orientation of BN/PVB. This result could be attributed to the improved degree of orientation of BN, caused by a larger number of hydroxyl groups being present. Those treated with C14H6O8 amphiphilic agent demonstrated a higher thermal conductivity than those treated by C27H27N3O2. The measured thermal conductivity of the composites was compared with that predicted by the several theoretical models

  19. Boron clusters in luminescent materials.

    Science.gov (United States)

    Mukherjee, Sanjoy; Thilagar, Pakkirisamy

    2016-01-21

    In recent times, luminescent materials with tunable emission properties have found applications in almost all aspects of modern material sciences. Any discussion on the recent developments in luminescent materials would be incomplete if one does not account for the versatile photophysical features of boron containing compounds. Apart from triarylboranes and tetra-coordinate borate dyes, luminescent materials consisting of boron clusters have also found immense interest in recent times. Recent studies have unveiled the opportunities hidden within boranes, carboranes and metalloboranes, etc. as active constituents of luminescent materials. From simple illustrations of luminescence, to advanced applications in LASERs, OLEDs and bioimaging, etc., the unique features of such compounds and their promising versatility have already been established. In this review, recent revelations about the excellent photophysical properties of such materials are discussed. PMID:26574714

  20. CVD-produced boron filaments

    Science.gov (United States)

    Wawner, F. E.; Debolt, H. E.; Suplinskas, R. D.

    1980-01-01

    A technique for producing boron filaments with an average tensile strength of 6.89 GPa has been developed which involves longitudinal splitting of the filament and core (substrate) removal by etching. Splitting is accomplished by a pinch wheel device which continuously splits filaments in lengths of 3.0 m by applying a force to the side of the filament to create a crack which is then propagated along the axis by a gentle sliding action. To facilitate the splitting, a single 10 mil tungsten substrate is used instead of the usual 0.5 mil substrate. A solution of hot 30% hydrogen peroxide is used to remove the core without attacking the boron. An alternative technique is to alter the residual stress by heavily etching the filament. Average strengths in the 4.83-5.52 GPa range have been obtained by etching an 8 mil filament to 4 mil.

  1. Mid-infrared polaritonic coupling between boron nitride nanotubes and graphene.

    Science.gov (United States)

    Xu, Xiaoji G; Jiang, Jian-Hua; Gilburd, Leonid; Rensing, Rachel G; Burch, Kenneth S; Zhi, Chunyi; Bando, Yoshio; Golberg, Dmitri; Walker, Gilbert C

    2014-11-25

    Boron nitride (BN) is considered to be a promising substrate for graphene-based devices in part because its large band gap can serve to insulate graphene in layered heterostructures. At mid-infrared frequencies, graphene supports surface plasmon polaritons (SPPs), whereas hexagonal-BN (h-BN) is found to support surface phonon polaritons (SPhPs). We report on the observation of infrared polaritonic coupling between graphene SPPs and boron nitride nanotube (BNNT) SPhPs. Infrared scattering type scanning near-field optical microscopy is used to obtain spatial distribution of the two types of polaritons at the nanoscale. The observation suggests that those polaritons interact at the nanoscale in a one-dimensional/two-dimensional (1D/2D) geometry, exchanging energy in a nonplanar configuration at the nanoscale. Control of the polaritonic interaction is achieved by adjustment of the graphene Fermi level through voltage gating. Our observation suggests that boron nitride nanotubes and graphene can interact at mid-infrared frequencies and coherently exchange their energies at the nanoscale through the overlap of mutual electric near field of surface phonon polaritons and surface plasmon polaritons. Such interaction enables the design of nano-optical devices based on BNNT-graphene polaritonics in the mid-infrared range. PMID:25365544

  2. The mechanism for low temperature growth of vertically aligned boron nitride nanotubes

    Science.gov (United States)

    Wang, Jiesheng; Xie, Ming; Khin Yap, Yoke

    2006-03-01

    Boron nitride nanotubes (BNNTs) are well recognized as the candidate that will complement the uses of carbon nanotubes (CNTs) in nanotechnology. However, high growth temperatures (>1100 ^oC), low production yield, and impurities have prevented effective synthesis and applications of boron nitride nanotubes (BNNTs) in the past ten years. For the first time, we have succeeded on the growth of pure BNNTs on substrates [1, 2]. This has been realized based on our experiences of growing CNTs and boron nitride (BN) phases (cubic phase BN, hexagonal phase BN). According to our hypothetical model, energetic growth species play an important role on controlling the phases of BN solids. We have experimentally verified that BNNTs can be grown by energetic growth species by a plasma-enhanced pulsed laser deposition (PEPLD) technique. These BNNTs can be grown vertically aligned into arrays of regular patterns at 600 ^oC, and can be used for applications without purification. The growth mechanism of thee BNNTs will be discussed. [1]. Yap et al., Bull APS Vol 50, 1346-1347 (March 2005). [2]. Wang et al., nano Letters (2005) ASAP, DOI: 10.1021/nl051859n.

  3. Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

    Science.gov (United States)

    Darwish, Ahmed A.; Fadlallah, Mohamed M.; Badawi, Ashraf; Maarouf, Ahmed A.

    2016-07-01

    Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  4. Kinetics and film properties of boron nitride derived from trimethoxyborane/ammonia by chemical vapor deposition

    International Nuclear Information System (INIS)

    The kinetics of the CVD of boron nitride from trimethoxyborane (TMOB) and ammonia (NH3) under atmospheric pressure was investigated by varying the following process parameters: temperature, residence time of the reactants, molar fraction of TMOB, and the NH3/TMOB ratio, γ. A kinetic power law equation was derived, that describes the experimental results with good accuracy. The reaction order with respect to TMOB is found to be 0.9 and -0.2 with respect to NH3. Between 800 C and 950 C, the deposition rate is controlled by the surface reaction kinetics with apparent activation energy of 115.1 kJ mol-1. The deposited BN films were characterized by IR spectroscopy, Raman spectroscopy, and X-ray diffraction (XRD). The microstructure of the deposits depends on the nature of the substrates used. Turbostratic boron nitride (t-BN) was deposited on graphite, and hexagonal boron nitride (h-BN) on alumina substrates. X-ray photoelectron spectroscopy (XPS) analyses show nearly stoichiometric BN films for deposition temperatures in the range 850-950 C for high amounts of ammonia (100< γ <150) in the feed gas. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  5. 机械法合成BN纳米管%Mechanosynthesis of Boron Nitride Nanotubes

    Institute of Scientific and Technical Information of China (English)

    籍凤秋; 曹传宝; 徐红; 杨子光

    2006-01-01

    Boron nitride nanotubes (BN-NTs) with pure hexagonal BN phase have been synthesized by heating ball-milled boron powders in flowing ammonia gas at a temperature of 1200℃. The as-synthesized products were characterized by X-ray powder diffraction, transmission electron microscopy, high-resolution transmission electron microscopy, and electron energy loss spectroscopy (EELS). The diameters of nanotubes are in the rage of 40120nm and the lengths are more than 10μm. EELS result identifies that the ratio of boron and nitrogen is almost 1:1. The growth temperature is a crucial growth parameter in controlling the structure and crystalline of BN-NTs. The nanotubes grown at 1100℃ possesses of a bamboo-like structure, while as the temperature increased to 1200℃, most of the nanotubes exhibited a cylindrical structure. In addition, changing the heating time can control the size of the nanotubes. The gas atmosphere has influence on the yield of BN-NTs during heating process. When heating atmosphere was replaced by nitrogen, the yield of nanotubes was remarkably decreased.

  6. Hexagonal Pixels and Indexing Scheme for Binary Images

    Science.gov (United States)

    Johnson, Gordon G.

    2004-01-01

    A scheme for resampling binaryimage data from a rectangular grid to a regular hexagonal grid and an associated tree-structured pixel-indexing scheme keyed to the level of resolution have been devised. This scheme could be utilized in conjunction with appropriate image-data-processing algorithms to enable automated retrieval and/or recognition of images. For some purposes, this scheme is superior to a prior scheme that relies on rectangular pixels: one example of such a purpose is recognition of fingerprints, which can be approximated more closely by use of line segments along hexagonal axes than by line segments along rectangular axes. This scheme could also be combined with algorithms for query-image-based retrieval of images via the Internet. A binary image on a rectangular grid is generated by raster scanning or by sampling on a stationary grid of rectangular pixels. In either case, each pixel (each cell in the rectangular grid) is denoted as either bright or dark, depending on whether the light level in the pixel is above or below a prescribed threshold. The binary data on such an image are stored in a matrix form that lends itself readily to searches of line segments aligned with either or both of the perpendicular coordinate axes. The first step in resampling onto a regular hexagonal grid is to make the resolution of the hexagonal grid fine enough to capture all the binaryimage detail from the rectangular grid. In practice, this amounts to choosing a hexagonal-cell width equal to or less than a third of the rectangular- cell width. Once the data have been resampled onto the hexagonal grid, the image can readily be checked for line segments aligned with the hexagonal coordinate axes, which typically lie at angles of 30deg, 90deg, and 150deg with respect to say, the horizontal rectangular coordinate axis. Optionally, one can then rotate the rectangular image by 90deg, then again sample onto the hexagonal grid and check for line segments at angles of 0deg, 60deg

  7. New results for loop integrals: AMBRE, CSectors, hexagon

    CERN Document Server

    Gluza, Janusz; Riemann, Tord; Yundin, Valery

    2009-01-01

    We report on the three Mathematica packages hexagon, CSectors, AMBRE. They are useful for the evaluation of one- and two-loop Feynman integrals with a dependence on several kinematical scales. These integrals are typically needed for LHC and ILC applications, but also for higher order corrections at meson factories. hexagon is a new package for the tensor reduction of one-loop 5-point and 6-point functions with rank R=3 and R=4, respectively; AMBRE is a tool for derivations of Mellin-Barnes representations; CSectors is an interface for the package sector_decomposition and allows a convenient, direct evaluation of tensor Feynman integrals.

  8. Influence of trace boron on the morphology of titanium carbide in an Al-Ti-C-B master alloy

    International Nuclear Information System (INIS)

    The influence of trace B (boron) element on the morphology of TiC crystals in an Al-Ti-C-B master alloy prepared by a melt reaction method has been investigated in this paper. The morphology and chemical composition of TiC crystals are characterized from X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersion spectroscopy (EDS), transmission electron microscopy (TEM) and selected area electron diffraction (SAED) analyses. It is found that both TiC hexagonal platelet and TiC polyhedron have formed in the Al-Ti-C-B master alloy. Furthermore, a trace amount of B element is found in TiC hexagonal platelets evidenced by the EDS spectrum. However, the SAED pattern confirms that the crystal structure of TiC has not changed. The formation and growth mechanism of the TiC hexagonal platelet have been discussed. It is considered that the trace B element in the aluminum melt promotes the transformation of TiC from polyhedron to hexagonal platelet at the initial growth stage.

  9. Boron Enrichment in Martian Clay

    OpenAIRE

    James D Stephenson; Lydia J Hallis; Kazuhide Nagashima; Freeland, Stephen J.

    2013-01-01

    We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest minera...

  10. Conduction mechanism in boron carbide

    Science.gov (United States)

    Wood, C.; Emin, D.

    1984-01-01

    Electrical conductivity, Seebeck-coefficient, and Hall-effect measurements have been made on single-phase boron carbides, B(1-x)C(x), in the compositional range from 0.1 to 0.2 X, and between room temperature and 1273 K. The results indicate that the predominant conduction mechanism is small-polaron hopping between carbon atoms at geometrically inequivalent sites.

  11. Boron removal from geothermal waters by electrocoagulation

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, A. Erdem [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)], E-mail: aerdemy@atauni.edu.tr; Boncukcuoglu, Recep [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey); Kocakerim, M. Muhtar [Atatuerk University, Faculty of Engineering, Department of Chemical Engineering, 25240 Erzurum (Turkey); Yilmaz, M. Tolga; Paluluoglu, Cihan [Atatuerk University, Faculty of Engineering, Department of Environmental Engineering., 25240 Erzurum (Turkey)

    2008-05-01

    Most of the geothermal waters in Turkey contain extremely high concentration of boron when they are used for irrigation. The use of geothermal waters for irrigation can results in excess amount deposition of boron in soil. On the other hand, a minimal boron concentration is required for irrigational waters. In this study, electrocoagulation (EC) was selected as a treatment process for the removal of boron from thermal waters obtained from Ilica-Erzurum in Turkey. Current density (CD), pH of solution and temperature of solution were selected as operational parameters. The results showed that boron removal efficiency increased from pH 4.0 to 8.0 and decreased at pH 10.0. Although boron removal efficiency was highest at pH 8.0, energy consumption was very high at this pH value compared to other pH intervals. Boron removal efficiency reached to 95% with increasing current density from 1.5 to 6.0 mA/cm{sup 2}, but energy consumption was also increased in this interval. At higher temperatures of solution, such as 313 and 333 K, boron removal efficiency increased. At optimum conditions, boron removal efficiency in geothermal water reached up to 95%.

  12. A new algorithm for anisotropic solutions

    Indian Academy of Sciences (India)

    M Chaisi; S D Maharaj

    2006-02-01

    We establish a new algorithm that generates a new solution to the Einstein field equations, with an anisotropic matter distribution, from a seed isotropic solution. The new solution is expressed in terms of integrals of an isotropic gravitational potential; and the integration can be completed exactly for particular isotropic seed metrics. A good feature of our approach is that the anisotropic solutions necessarily have an isotropic limit. We find two examples of anisotropic solutions which generalise the isothermal sphere and the Schwarzschild interior sphere. Both examples are expressed in closed form involving elementary functions only.

  13. Multiple Scattering Using Parallel Volume Integral Equation Method: Interaction of SH Waves with Multiple Multilayered Anisotropic Elliptical Inclusions

    Directory of Open Access Journals (Sweden)

    Jungki Lee

    2015-01-01

    Full Text Available The parallel volume integral equation method (PVIEM is applied for the analysis of elastic wave scattering problems in an unbounded isotropic solid containing multiple multilayered anisotropic elliptical inclusions. This recently developed numerical method does not require the use of Green’s function for the multilayered anisotropic inclusions; only Green’s function for the unbounded isotropic matrix is needed. This method can also be applied to solve general two- and three-dimensional elastodynamic problems involving inhomogeneous and/or multilayered anisotropic inclusions whose shape and number are arbitrary. A detailed analysis of the SH wave scattering is presented for multiple triple-layered orthotropic elliptical inclusions. Numerical results are presented for the displacement fields at the interfaces for square and hexagonal packing arrays of triple-layered elliptical inclusions in a broad frequency range of practical interest. It is necessary to use standard parallel programming, such as MPI (message passing interface, to speed up computation in the volume integral equation method (VIEM. Parallel volume integral equation method as a pioneer of numerical analysis enables us to investigate the effects of single/multiple scattering, fiber packing type, fiber volume fraction, single/multiple layer(s, multilayer’s shape and geometry, isotropy/anisotropy, and softness/hardness of the multiple multilayered anisotropic elliptical inclusions on displacements at the interfaces of the inclusions.

  14. Bonding distances as Exact Sums of the Radii of the Constituent Atoms in Nanomaterials - Boron Nitride and Coronene

    CERN Document Server

    Heyrovska, Raji

    2010-01-01

    This paper presents for the first time the exact structures at the atomic level of two important nanomaterials, boron nitride and coronene. Both these compounds are hexagonal layer structures similar to graphene in two dimensions and to graphite in three-dimensions. However, they have very different properties: whereas graphene is a conductor, h-BN is an electrical insulator and coronene is a polycyclic aromatic hydrocarbon of cosmological interest. The atomic structures presented here are based on bond lengths as the sums of the atomic radii.

  15. Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

    Science.gov (United States)

    Durmazuçar, Hasan H.; Gündüz, Güngör

    2000-12-01

    Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

  16. Method for determination of boron carbide in wurtzite-like boron nitride

    International Nuclear Information System (INIS)

    A technique for increase of sensitivity and analysis accuracy while boron carbide determination in wurtzite-like boron nitride is proposed. Boron nitride with an addition of boron carbide is bjected to treatment by the mixture of concentrated sulphuric acid and 0.1-0.5 N of porassium bichromate solution at ratio of (2-1):1 at the temperature of mixture boiling. Boron carboide content is calculated according to the quantity of restored Cr(3+), which is determined by titration of Cr(6+) excess with the Mohr's salt solution

  17. Generation and Characterization of Anisotropic Microstructures in Rare Earth-Iron-Boron Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Oster, Nathaniel [Iowa State Univ., Ames, IA (United States)

    2012-01-01

    The goal of this work is to investigate methods in which anisotropy could be induced in fine-grained alloys. We have identified two general processing routes to creating a fine, textured microstructure: form an amorphous precursor and devitrify in a manner that induces texture or form the fine, textured microstructure upon cooling directly from the liquid state. Since it is possible to form significant amounts of amorphous material in RE-Fe-B alloys, texture could be induced through biasing the orientationof the crystallites upon crystallization of the amorphous material. One method of creating this bias is to form glassy material and apply uniaxial pressure during crystallization. Experiments on this are presented. All of the work presented here utilizes melt-spinning, either to create precursor material, or to achieve a desired final microstructure. To obtain greater control of the system to process these materials, a study was done on the effects of heating the wheel and modifying the wheel’s surface finish on glass formation and phase selection. The second general approach—creating the desired microstructure directly from the liquid—can be done through directional rapid solidification. In particular, alloys melt-spun at low tangential wheel speeds often display directional columnar growth through a portion of the ribbon. By refining and stabilizing the columnar growth, a highly textured fine microstructure is achieved. The effects of adding a segregating element (Ag) on the columnar growth are characterized and presented.

  18. Boron water quality for the Plynlimon catchments

    Directory of Open Access Journals (Sweden)

    C. Neal

    1997-01-01

    Full Text Available Boron concentrations in rainfall, throughfall and stemflow for Spruce stands, mist, streamwater and groundwater are compared with chloride to assess atmospheric sources and catchment input-output balances for the Plynlimon catchments. In rainfall, boron concentration averages about 4.5 μg-B l-1 and approximately two thirds of this comes from anthropogenic sources. In through-fall and stemflow, boron concentrations are approximately a factor of ten times higher than in rainfall. This increase is associated with enhanced scavenging of mist and dry deposition by the trees. As the sampling sites were close to a forest edge, this degree of scavenging is probably far higher than in the centre of the forest. The throughfall and stemflow concentrations of boron show some evidence of periodic variations with time with peak concentrations occurring during the summer months indicating some vegetational cycling. In mist, boron concentrations are almost twenty times higher than in rainfall and anthropogenic sources account for about 86% of this. Within the Plynlimon streams, boron concentrations are about 1.4 to 1.7 times higher than in rainfall. However, after allowance for mist and dry deposition contributions to atmospheric deposition, it seems that, on average, about 30% of the boron input is retained within the catchment. For the forested catchments, felling results in a disruption of the biological cycle and a small increase in boron leaching from the catchment results in the net retention by the catchment being slightly reduced. Despite the net uptake by the catchment, there is clear evidence of a boron component of weathering from the bedrock. This is shown by an increased boron concentration in a stream influenced by a nearby borehole which increased groundwater inputs. The weathering component for boron is also observed in Plynlimon groundwaters as boron concentrations and boron to chloride ratios are higher than for the streams. For these

  19. Existence of Phi-Relationship Within Regular Hexagonal Tessellation

    CERN Document Server

    Bervalds, Edgars

    2009-01-01

    The Phi- relationship also known as Phi-factor appears in a number of lattice structures, mostly considering the lines within several separate circles or polygons. The paper considers a regular hexagonal tessellation as a lattice with the highest specific mechanical stiffness.

  20. The configuration space of equilateral and equiangular hexagons

    CERN Document Server

    O'Hara, Jun

    2011-01-01

    We study the configuration space of equilateral and equiangular spatial hexagons for any bond angle by giving explicit expressions of all the possible shapes. We show that the chair configuration is isolated, whereas the boat configuration allows one-dimensional deformations which form a circle in the configuration space.

  1. Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires

    KAUST Repository

    Wang, Ping

    2015-12-22

    Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001 ̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about two-fold larger in magnitude than those on the (0001 ̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.

  2. Solitary plane waves in an isotropic hexagonal lattice

    DEFF Research Database (Denmark)

    Zolotaryuk, Yaroslav; Savin, A.V.; Christiansen, Peter Leth

    1998-01-01

    Solitary plane-wave solutions in a two-dimensional hexagonal lattice which can propagate in different directions on the plane are found by using the pseudospectral method. The main point of our studies is that the lattice model is isotropic and we show that the sound velocity is the same for diff...

  3. Coherent memory functions for finite systems: hexagonal photosynthetic unit

    International Nuclear Information System (INIS)

    Coherent memory functions entering the Generalized Master Equation are presented for an hexagonal model of a photosynthetic unit. Influence of an energy heterogeneity on an exciton transfer is an antenna system as well as to a reaction center is investigated. (author). 9 refs, 3 figs

  4. Boron Separation by the Two-step Ion-Exchange for the Isotopic Measurement of Boron

    Institute of Scientific and Technical Information of China (English)

    WANG,Qing-Zhong(王庆忠); XIAO,Ying-Kai(肖应凯); WANG,Yun-Hui(王蕴惠); ZHANG,Chong-Geng(张崇耿); WEI,Hai-Zhen(魏海珍)

    2002-01-01

    An improved procedure for extraction and purification of boron from natural samples is presented. The separation and purification of boron was carried out using a boron-specific resin, Amberlite IRA743, and a mixed ion exchange resin,Dowex 50W × 8 and Ion Exchanger Ⅱ resin. Using the mixed ion exchange resin which adsorbs all cations and anions except boron, the HCl and other cations and anions left in eluant from the Amberlite IRA 743 were removed effectively. In this case, boron loss can be avoided because the boron-bearing solution does not have to be evaporated to reach dryness to dislodge HCl. The boron recovery ranged from 97.6% to 102% in this study. The isotopic fractionation of boron can be negligible within the precision of the isotopic measurement. The results show that boron separation for the isotopic measurement by using both Amberlite IRA 743 resin and the mixed rein is more effective than that using Amberlite IRA 743 resin alone. The boron in samples of brine, seawater, rock, coral and foraminifer were separated by this procedure. Boron isotopic compositions of these samples were measured by thermal ionization mass spectrometry in this study.

  5. Anisotropic surface tension of buckled fluid membrane

    OpenAIRE

    Noguchi, Hiroshi

    2011-01-01

    Solid sheets and fluid membranes exhibit buckling under lateral compression. Here, it is revealed that fluid membranes have anisotropic buckling surface tension contrary to solid sheets. Surprisingly, the surface tension perpendicular to the buckling direction shows stronger dependence than that parallel to it. Our theoretical predictions are supported by numerical simulations of a meshless membrane model. This anisotropic tension can be used to measure the membrane bending rigidity. It is al...

  6. Theory of Compton scattering by anisotropic electrons

    OpenAIRE

    Poutanen, Juri; Vurm, Indrek

    2010-01-01

    Compton scattering plays an important role in various astrophysical objects such as accreting black holes and neutron stars, pulsars, and relativistic jets, clusters of galaxies as well as the early Universe. In most of the calculations it is assumed that the electrons have isotropic angular distribution in some frame. However, there are situations where the anisotropy may be significant due to the bulk motions, or anisotropic cooling by synchrotron radiation, or anisotropic source of seed so...

  7. Anisotropic rectangular metric for polygonal surface remeshing

    KAUST Repository

    Pellenard, Bertrand

    2013-06-18

    We propose a new method for anisotropic polygonal surface remeshing. Our algorithm takes as input a surface triangle mesh. An anisotropic rectangular metric, defined at each triangle facet of the input mesh, is derived from both a user-specified normal-based tolerance error and the requirement to favor rectangle-shaped polygons. Our algorithm uses a greedy optimization procedure that adds, deletes and relocates generators so as to match two criteria related to partitioning and conformity.

  8. Rainbow metric from quantum gravity: anisotropic cosmology

    OpenAIRE

    Assanioussi, Mehdi; Dapor, Andrea

    2016-01-01

    In this paper we present a construction of effective cosmological models which describe the propagation of a massive quantum scalar field on a quantum anisotropic cosmological spacetime. Each obtained effective model is represented by a rainbow metric in which particles of distinct momenta propagate on different classical geometries. Our analysis shows that upon certain assumptions and conditions on the parameters determining such anisotropic models, we surprisingly obtain a unique deformatio...

  9. Anisotropic cosmological solutions in massive vector theories

    OpenAIRE

    Heisenberg, Lavinia; Kase, Ryotaro; Tsujikawa, Shinji

    2016-01-01

    In beyond-generalized Proca theories including the extension to theories higher than second order, we study the role of a spatial component $v$ of a massive vector field on the anisotropic cosmological background. We show that, as in the case of the isotropic cosmological background, there is no additional ghostly degrees of freedom associated with the Ostrogradski instability. In second-order generalized Proca theories we find the existence of anisotropic solutions on which the ratio between...

  10. Anisotropic Transport Properties of Complex Metallic Alloys

    OpenAIRE

    Smontara, Ana; Dolinšek, Janez

    2010-01-01

    Anisotropic transport properties (electrical resistivity, ρ, and thermal conductivity, κ) of the Y-phase Al-Ni-Co, o-Al13Co4 and Al4(Cr,Fe) complex metallic alloys were investigated. They belong to the class of decagonal approximant phases with stacked-layer crystallographic structure and allowed us to study the evolution of anisotropic transport properties with increasing structural complexity and the unit cell size.

  11. Anisotropic Stars: Exact Solutions and Stability

    OpenAIRE

    Dev, Krsna; Gleiser, Marcelo

    2004-01-01

    I report on recent work concerning the existence and stability of self-gravitating spheres with anisotropic pressure. After presenting new exact solutions, Chandrasekhar's variational formalism for radial perturbations is generalized to anisotropic objects and applied to investigate their stability. It is shown that anisotropy can not only support stars of mass M and radius R with 2M/R > 8/9 and arbitrarily large surface redshifts, but that stable configurations exist for values of the adiaba...

  12. Some physical properties of compacted specimens of highly dispersed boron carbide and boron suboxide

    International Nuclear Information System (INIS)

    Structure, shear modulus and internal friction (IF) of compacted specimens of boron carbide and boron suboxide have been investigated. Microtwins and stacking faults were observed along the {100} plane systems of polycrystalline specimens of boron carbide. Electrical conductivity of the specimens was that of p-type. Concentration of holes varied from 1017 to 1019 cm-3. The IF was measured in the temperature range 80-300 K. It was shown that the IF of boron carbide and that of boron suboxide were characterized with a set of similar relaxation processes. Mechanisms of the relaxation processes in boron carbide and boron suboxide are discussed in terms of the Hasiguti model of interaction between dislocations and point defects

  13. Anisotropic diffusion-limited aggregation.

    Science.gov (United States)

    Popescu, M N; Hentschel, H G E; Family, F

    2004-06-01

    Using stochastic conformal mappings, we study the effects of anisotropic perturbations on diffusion-limited aggregation (DLA) in two dimensions. The harmonic measure of the growth probability for DLA can be conformally mapped onto a constant measure on a unit circle. Here we map m preferred directions for growth to a distribution on the unit circle, which is a periodic function with m peaks in [-pi,pi) such that the angular width sigma of the peak defines the "strength" of anisotropy kappa= sigma(-1) along any of the m chosen directions. The two parameters (m,kappa) map out a parameter space of perturbations that allows a continuous transition from DLA (for small enough kappa ) to m needlelike fingers as kappa--> infinity. We show that at fixed m the effective fractal dimension of the clusters D(m,kappa) obtained from mass-radius scaling decreases with increasing kappa from D(DLA) approximately 1.71 to a value bounded from below by D(min) = 3 / 2. Scaling arguments suggest a specific form for the dependence of the fractal dimension D(m,kappa) on kappa for large kappa which compares favorably with numerical results. PMID:15244564

  14. Anisotropic pressure and hyperons in neutron stars

    CERN Document Server

    Sulaksono, A

    2014-01-01

    We study the effects of anisotropic pressure on properties of the neutron stars with hyperons inside its core within the framework of extended relativistic mean field. It is found that the main effects of anisotropic pressure on neutron star matter is to increase the stiffness of the equation of state, which compensates for the softening of the EOS due to the hyperons. The maximum mass and redshift predictions of anisotropic neutron star with hyperonic core are quite compatible with the result of recent observational constraints if we use the parameter of anisotropic pressure model $h \\le 0.8$[1] and $\\Lambda \\le -1.15$ [2]. The radius of the corresponding neutron star at $M$=1.4 $M_\\odot$ is more than 13 km, while the effect of anisotropic pressure on the minimum mass of neutron star is insignificant. Furthermore, due to the anisotropic pressure in the neutron star, the maximum mass limit of higher than 2.1 $M_\\odot$ cannot rule out the presence of hyperons in the neutron star core.

  15. New techniques for producing thin boron films

    International Nuclear Information System (INIS)

    A review will be presented of methods for producing thin boron films using an electron gun. Previous papers have had the problem of spattering of the boron source during the evaporation. Methods for reducing this problem will also be presented. 12 refs., 4 figs

  16. Boron carbide whiskers produced by vapor deposition

    Science.gov (United States)

    1965-01-01

    Boron carbide whiskers have an excellent combination of properties for use as a reinforcement material. They are produced by vaporizing boron carbide powder and condensing the vapors on a substrate. Certain catalysts promote the growth rate and size of the whiskers.

  17. Fabrication of boron-phosphide neutron detectors

    International Nuclear Information System (INIS)

    Boron phosphide is a potentially viable candidate for high neutron flux neutron detectors. The authors have explored chemical vapor deposition methods to produce such detectors and have not been able to produce good boron phosphide coatings on silicon carbide substrates. However, semi-conducting quality films have been produced. Further testing is required

  18. High-Yield Synthesis of Stoichiometric Boron Nitride Nanostructures

    Directory of Open Access Journals (Sweden)

    José E. Nocua

    2009-01-01

    Full Text Available Boron nitride (BN nanostructures are structural analogues of carbon nanostructures but have completely different bonding character and structural defects. They are chemically inert, electrically insulating, and potentially important in mechanical applications that include the strengthening of light structural materials. These applications require the reliable production of bulk amounts of pure BN nanostructures in order to be able to reinforce large quantities of structural materials, hence the need for the development of high-yield synthesis methods of pure BN nanostructures. Using borazine (B3N3H6 as chemical precursor and the hot-filament chemical vapor deposition (HFCVD technique, pure BN nanostructures with cross-sectional sizes ranging between 20 and 50 nm were obtained, including nanoparticles and nanofibers. Their crystalline structure was characterized by (XRD, their morphology and nanostructure was examined by (SEM and (TEM, while their chemical composition was studied by (EDS, (FTIR, (EELS, and (XPS. Taken altogether, the results indicate that all the material obtained is stoichiometric nanostructured BN with hexagonal and rhombohedral crystalline structure.

  19. Origin of rectification in boron nitride heterojunctions to silicon.

    Science.gov (United States)

    Teii, Kungen; Hori, Takuro; Mizusako, Yusei; Matsumoto, Seiichiro

    2013-04-10

    Cubic and hexagonal boron nitride (cBN and hBN) heterojunctions to n-type Si are fabricated under low-energy ion bombardment by inductively coupled plasma-enhanced chemical vapor deposition using the chemistry of fluorine. The sp2-bonded BN/Si heterojunction shows no rectification, while the cBN/sp2BN/Si heterojunction has rectification properties analogue to typical p-n junction diodes despite a large thickness (∼130 nm) of the sp2BN interlayer. The current-voltage characteristics at temperatures up to 573 K are governed by thermal excitation of carriers, and mostly described with the ideal diode equation and the Frenkel-Poole emission model at low and high bias voltages, respectively. The rectification in the cBN/sp2BN/Si heterojunction is caused by a bias-dependent change in the barrier height for holes arising from stronger p-type conduction in the cBN layer and enhanced with the thick sp2BN interlayer for impeding the reverse current flow at defect levels mainly associated with grain boundaries.

  20. Precursor design of vapour deposited cubic boron nitride versus diamond

    International Nuclear Information System (INIS)

    The similarities and dissimilarities in the growth of diamond vs. cubic boron nitride (c-BN) were studied using quantum mechanical calculations. Great similarities were observed when considering the surface stabilization by H atoms. Very great similarities were recorded when considering the adsorption of various growth species to these materials. It was found necessary to avoid mixtures of B- and N-containing species in the gas phase during c-BN growth, since they should most probably result in a mixture of these species also on the surfaces. Greater dissimilarities were observed when studying the surface migrations on the diamond and c-BN surfaces and nucleation of the cubic phases on the corresponding hexagonal ones. Nucleation of diamond/c-BN on graphite/h-BN was found to be energetically feasible. This was calculated to be especially the situation for the armchair edge of the basal plane of h-BN and of the zigzag edge of the basal plane of graphite. These theoretical results can be used as guidelines in the strive towards thin film deposition of c-BN using gentle chemical vapour deposition methods like atomic layer deposition. (author)

  1. Effect of Nitrogen Impurity on Electronic Properties of Boron Nanotubes

    Directory of Open Access Journals (Sweden)

    Sandeep Kumar Jain

    2014-01-01

    Full Text Available For the first time we present electronic band structure and density of states for nitrogen doped hexagonal ultrathin boron nanotubes in the framework of density functional theory. The considered models of nanotubes below 5 Å diameter are armchair (3,3, zigzag (5,0, and chiral (4,2. The impurity chosen for the study is nitrogen and concentration of impurity atoms is limited to two. The study reveals that (3,3 BNT retains its metallic nature after nitrogen doping. However, metallicity gets increased which is attributed by the excess electrons of nitrogen. Further, it also brings out that (5,0 BNT which is originally metal transforms into semiconductor after nitrogen interaction and the band gap at G point increases with the impurity. Moreover, the band gap of (4,2 BNT reduces significantly and turns into semimetal for nitrogen doping. Thus, the nitrogen impurity has the predominant effect on the electronic properties of BNTs and therefore can be regarded as suitable candidates for nanoelectronic and field emission devices.

  2. Stabilization of boron carbide via silicon doping.

    Science.gov (United States)

    Proctor, J E; Bhakhri, V; Hao, R; Prior, T J; Scheler, T; Gregoryanz, E; Chhowalla, M; Giulani, F

    2015-01-14

    Boron carbide is one of the lightest and hardest ceramics, but its applications are limited by its poor stability against a partial phase separation into separate boron and carbon. Phase separation is observed under high non-hydrostatic stress (both static and dynamic), resulting in amorphization. The phase separation is thought to occur in just one of the many naturally occurring polytypes in the material, and this raises the possibility of doping the boron carbide to eliminate this polytype. In this work, we have synthesized boron carbide doped with silicon. We have conducted a series of characterizations (transmission electron microscopy, scanning electron microscopy, Raman spectroscopy and x-ray diffraction) on pure and silicon-doped boron carbide following static compression to 50 GPa non-hydrostatic pressure. We find that the level of amorphization under static non-hydrostatic pressure is drastically reduced by the silicon doping.

  3. Boronated mesophase pitch coke for lithium insertion

    Science.gov (United States)

    Frackowiak, E.; Machnikowski, J.; Kaczmarska, H.; Béguin, F.

    Boronated carbons from mesophase pitch have been used as materials for lithium storage in Li/carbon cells. Doping by boron has been realized by co-pyrolysis of coal tar pitch with the pyridine-borane complex. Amount of boron in mesocarbon microbeads (MCMB) varied from 1.4 to 1.8 wt.% affecting the texture of carbon. Optical microscopy and X-ray diffractograms have shown tendency to more disordered structure for boron-doped carbon. The values of specific reversible capacity ( x) varied from 0.7 to 1.1 depending significantly on the final temperature of pyrolysis (700-1150°C). The optimal charge/discharge performance was observed for boronated carbon heated at 1000°C.

  4. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B.; Koetz, R. [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H.J.; Nesper, R. [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  5. Dispersion properties of transverse anisotropic liquid crystal core photonic crystal fibers

    Science.gov (United States)

    Karasawa, Naoki

    2016-04-01

    The dispersion properties of liquid crystal core photonic crystal fibers for different core diameters have been calculated by a full vectorial finite difference method. In calculations, air holes are assumed to be arranged in a regular hexagonal array in fused silica and a central hole is filled with liquid crystal to create a core. In this study, three types of transverse anisotropic configurations, where liquid crystal molecules are oriented in a transverse plane, and a planar configuration, where liquid crystal molecules are oriented in a propagation direction, are considered. The large changes of the dispersion properties are found when the orientation of the liquid crystal molecules is changed from a planar configuration to a uniform configuration, where all molecules are oriented in the same direction in a transverse plane. Since the orientation of liquid crystal molecules may be controlled by applying an electric field, it could be utilized for various applications including the spectral control of supercontinuum generation.

  6. Illuminating heterogeneous anisotropic upper mantle: testing new anisotropic teleseismic body wave tomography code - part I: Forward mode

    Science.gov (United States)

    Munzarova, Helena; Plomerova, Jaroslava; Kissling, Eduard

    2014-05-01

    Considering only isotropic wave propagation in teleseismic tomography studies and neglecting anisotropy is a simplification obviously incongruent with current understanding of the mantle-lithosphere plate dynamics. Furthermore, in solely isotropic high-resolution tomography results, potentially significant artefacts (i.e., amplitude and/or geometry distortions of 3D velocity heterogeneities) may result from such neglect. We have undertaken to develop an anisotropic version of frequently used isotropic teleseismic tomography code (TELINV), which will allow us to invert simultaneously for coupled isotropic-anisotropic P-wave velocity models. In the first step, we test the forward mode of the new code by calculating travel times of teleseismic body waves propagating through an anisotropic heterogeneous model of the upper mantle. The forward mode itself shows how specific heterogeneous anisotropic structure projects into P-wave travel times, particularly into directional variations of travel time residuals, which are presented by P-residual spheres showing the directional terms of relative residuals. This step further allows to investigate the trade-off between effects of P-wave anisotropy and isotropic heterogeneities. We present plots of synthetic P-residual spheres calculated for P waves propagating through several synthetic models of the upper mantle. The models are designed to represent schematically different structures of the upper mantle. We approximate the mantle lithosphere and asthenosphere by cells with various values of isotropic velocities as well as of strength and orientation of anisotropy in 3D, which is defined by azimuths and inclinations of symmetry axes of the hexagonal approximations of the media. We compare the synthetic P-residual spheres with observation examples from tectonically different regions which were subjected to anisotropy studies earlier. Modelling the P-residual spheres confirms that anisotropy is a significant source of directional

  7. Boron enrichment in martian clay.

    Science.gov (United States)

    Stephenson, James D; Hallis, Lydia J; Nagashima, Kazuhide; Freeland, Stephen J

    2013-01-01

    We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration. PMID:23762242

  8. Boron enrichment in martian clay.

    Directory of Open Access Journals (Sweden)

    James D Stephenson

    Full Text Available We have detected a concentration of boron in martian clay far in excess of that in any previously reported extra-terrestrial object. This enrichment indicates that the chemistry necessary for the formation of ribose, a key component of RNA, could have existed on Mars since the formation of early clay deposits, contemporary to the emergence of life on Earth. Given the greater similarity of Earth and Mars early in their geological history, and the extensive disruption of Earth's earliest mineralogy by plate tectonics, we suggest that the conditions for prebiotic ribose synthesis may be better understood by further Mars exploration.

  9. Optical Spectroscopy of Two Dimensional Graphene and Boron Nitride

    Science.gov (United States)

    Ju, Long

    This dissertation describes the use of optical spectroscopy in studying the physical properties of two dimensional nano materials like graphene and hexagonal boron nitride. Compared to bulk materials, atomically thin two dimensional materials have a unique character that is the strong dependence of physical properties on external control. Both electronic band structure and chemical potential can be tuned in situ by electric field-which is a powerful knob in experiment. Therefore the optical study at atomic thickness scale can greatly benefit from modern micro-fabrication technique and electric control of the material properties. As will be shown in this dissertation, such control of both gemometric and physical properties enables new possibilities of optical spectroscopic measurement as well as opto-electronic studies. Other experimental techniques like electric transport and scanning tunneling microscopy and spectroscopy are also combined with optical spectroscopy to reveal the physics that is beyond the reach of each individual technique. There are three major themes in the dissertation. The first one is focused on the study of plasmon excitation of Dirac electrons in monolayer graphene. Unlike plasmons in ordinary two dimensional electron gas, plasmons of 2D electrons as in graphene obey unusual scaling laws. We fabricate graphene micro-ribbon arrays with photolithography technique and use optical absorption spectroscopy to study its absorption spectrum. The experimental result demonstrates the extraordinarily strong light-plasmon coupling and its novel dependence on both charge doping and geometric dimensions. This work provides a first glance at the fundamental properties of graphene plasmons and forms the basis of an emerging subfield of graphene research and applications such as graphene terahertz metamaterials. The second part describes the opto-electronic response of heterostructures composed of graphene and hexagonal boron nitride. We found that there is

  10. Synthesis, characterization, shape evolution, and optical properties of copper sulfide hexagonal bifrustum nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Jia Baorui; Qin Mingli, E-mail: qinml@mater.ustb.edu.cn [University of Science and Technology Beijing, School of Materials Science and Engineering (China); Jiang Xuezhi [North Heavy Industry Group, Special Steel Works (China); Zhang Zili; Zhang Lin; Liu Ye; Qu Xuanhui [University of Science and Technology Beijing, School of Materials Science and Engineering (China)

    2013-03-15

    The hexagonal bifrustum-shaped copper sulfide (CuS) nanocrystals were selectively and facilely synthesized by a hydrothermal method for the first time at 120 Degree-Sign C. The products were characterized by X-ray diffraction, field emission scanning electron microscopy, energy dispersive X-ray spectroscopy, transmission electron microscopy, ultraviolet-visible (UV-Vis) spectroscopy, and photoluminescence spectroscopy. The results showed that the CuS hexagonal bifrustum nanocrystal was bounded by two top hexagons with edge length of about 50-70 nm and twelve lateral trapezoids with a base of about 100 nm and that the length of each hexagonal bifrustum was about 250 nm. Tetradecylamine (TDA), as an effective capping agent, was found to be critical for this special shape. Using different amounts of TDA, two kinds of CuS hexagonal bifrustum nanocrystals were obtained: 'lender hexagonal bifrustum' and 'pancake hexagonal bifrustum.' Furthermore, we studied the formation mechanism of hexagonal bifrustum, which is related to the intrinsic crystalline structure of CuS and Ostwald ripening. And, the results revealed that the CuS nanocrystal evolved from hexagonal plate to hexagonal bifrustum and finally to hexagonal bipyramid as the heating time increased. The UV-Vis absorption spectrum showed that these CuS hexagonal bifrustum nanocrystals exhibited strong absorption in the near-infrared region and had a potential application for photothermal therapy and photocatalysis.

  11. Continuum-mechanical, Anisotropic Flow model, based on an anisotropic Flow Enhancement factor (CAFFE)

    CERN Document Server

    Placidi, Luca; Seddik, Hakime; Faria, Sergio H

    2009-01-01

    A complete theoretical presentation of the CAFFE model (Continuum-mechanical, Anisotropic Flow model, based on an anisotropic Flow Enhancement factor) is given. The CAFFE model is an application of the theory of mixtures with continuous diversity for the case of large ice masses in which the induced anisotropy can not be neglected. The anisotropic response of the material is considered via a simple anisotropic generalization of Glen's flow law based on a scalar anisotropic enhancement factor. Such an enhancement factor depends upon the orientation mass density, that corresponds to the distribution of lattice orientations or simply to the orientation distribution function. The evolution of anisotropy is assumed to be modeled by the evolution of the orientation mass density, that is governed by the balance of mass of the present mixture with continuous diversity and explicitly depends upon four distinct effects interpreted, respectively, with grain rotation, local rigid body rotation, grain boundary migration (...

  12. Supercritical Fluid Facilitated Disintegration of Hexagonal Boron Nitride Nanosheets to Quantum Dots and Its Application in Cells Imaging.

    Science.gov (United States)

    Thangasamy, Pitchai; Santhanam, Manikandan; Sathish, Marappan

    2016-07-27

    Preparation of quantum dots (QDs) and exfoliation of two-dimensional layered materials have gathered significant attention in recent days. Though, there are number of attempts have been reported, facile and efficient methodology is yet to be explored. Here, we demonstrate supercritical fluid processing approach for rapid and facile synthesis of blue luminescent BN QDs from layered bulk material via in situ exfoliation followed by disintegration. The microscopic and AFM analysis confirmed the few layer BN QDs formation. The strong luminescent behavior of BN QDs is utilized to stain Gram-negative bacterial cells specifically in the presence of Gram-positive bacterial cells. PMID:27391298

  13. Formation of hexagonal boron nitride nanoscrolls induced by inclusion and exclusion of self-assembling molecules in solution process.

    Science.gov (United States)

    Hwang, Da Young; Suh, Dong Hack

    2014-06-01

    Unlike nanoscrolls of 2D graphene, those of 2D h-BN have not been demonstrated, except for only a few experimental reports. Nanoscrolls of h-BN with high yields and reproducibility are first synthesized by a simple solution process. Inner-tube diameters of BNSs including LCAs, N-(2-aminoethyl)-3α-hydroxy-5β-cholan-24-amide, a bile acid derivative and self-assembling material, can be controlled by adjusting the diameter of the LCA fiber which is grown by self-assembly. TEM and SEM images show that BNSs have a tube-like morphology and the inner-tube diameter of BNSs can be controlled in the range from 20 to 60 nm for a smaller diameter, up to 300 nm for a larger diameter by LCA fiber growth inside the BNSs. Finally, open cylindrical BNSs with hollow cores were obtained by dissolving LCAs inside BNSs.

  14. Formation of hexagonal boron nitride nanoscrolls induced by inclusion and exclusion of self-assembling molecules in solution process

    Science.gov (United States)

    Hwang, Da Young; Suh, Dong Hack

    2014-05-01

    Unlike nanoscrolls of 2D graphene, those of 2D h-BN have not been demonstrated, except for only a few experimental reports. Nanoscrolls of h-BN with high yields and reproducibility are first synthesized by a simple solution process. Inner-tube diameters of BNSs including LCAs, N-(2-aminoethyl)-3α-hydroxy-5β-cholan-24-amide, a bile acid derivative and self-assembling material, can be controlled by adjusting the diameter of the LCA fiber which is grown by self-assembly. TEM and SEM images show that BNSs have a tube-like morphology and the inner-tube diameter of BNSs can be controlled in the range from 20 to 60 nm for a smaller diameter, up to 300 nm for a larger diameter by LCA fiber growth inside the BNSs. Finally, open cylindrical BNSs with hollow cores were obtained by dissolving LCAs inside BNSs.Unlike nanoscrolls of 2D graphene, those of 2D h-BN have not been demonstrated, except for only a few experimental reports. Nanoscrolls of h-BN with high yields and reproducibility are first synthesized by a simple solution process. Inner-tube diameters of BNSs including LCAs, N-(2-aminoethyl)-3α-hydroxy-5β-cholan-24-amide, a bile acid derivative and self-assembling material, can be controlled by adjusting the diameter of the LCA fiber which is grown by self-assembly. TEM and SEM images show that BNSs have a tube-like morphology and the inner-tube diameter of BNSs can be controlled in the range from 20 to 60 nm for a smaller diameter, up to 300 nm for a larger diameter by LCA fiber growth inside the BNSs. Finally, open cylindrical BNSs with hollow cores were obtained by dissolving LCAs inside BNSs. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr00897a

  15. Synthesis of Large-Sized Single-Crystal Hexagonal Boron Nitride Domains on Nickel Foils by Ion Beam Sputtering Deposition.

    Science.gov (United States)

    Wang, Haolin; Zhang, Xingwang; Liu, Heng; Yin, Zhigang; Meng, Junhua; Xia, Jing; Meng, Xiang-Min; Wu, Jinliang; You, Jingbi

    2015-12-22

    Large-sized single-crystal h-BN domains with a lateral size up to 100 μm are synthesized on Ni foils by ion-beam sputtering deposition. The nucleation density of h-BN is dramatically decreased by reducing the concentrations of both active sites and species on the Ni surface through a brief in situ pretreatment of the substrate and optimization of the growth parameters, enabling the growth of large-sized domains.

  16. Hexagonal boron nitride hollow capsules with collapsed surfaces: Chemical vapor deposition with single-source precursor ammonium fluoroborate

    Science.gov (United States)

    Xiaopeng, Li; Jun, Zhang; Chao, Yu; Xiaoxi, Liu; Saleem, Abbas; Jie, Li; Yanming, Xue; Chengchun, Tang

    2016-07-01

    SBA-15 (mesoporous SiO2) is used to stabilize and transfer F- in the NH4BF4 CVD reaction for the first time, and a large-scale crystalline h-BN phase can be prepared. We successfully fabricate hollow h-BN capsules with collapsed surfaces in our designed NH4BF4 CVD system. Optimum temperature conditions are obtained, and a detailed formation mechanism is further proposed. The successful SBA-15-assisted NH4BF4 CVD route is of importance and enriches the engineering technology in the h-BN single-source CVD reaction. Project supported by the National Natural Science Foundation of China (Grant Nos. 51332005, 51372066, 51172060, 51202055, and 21103056).

  17. Layer-structured hexagonal (BN)C semiconductor alloys with tunable optical and electrical properties

    Science.gov (United States)

    Uddin, M. R.; Majety, S.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2014-03-01

    Hexagonal boron nitride carbon, h(BN)1-x(C2)x, semiconductor alloys have been grown on sapphire substrates by metal-organic chemical vapor deposition. Bandgap tuning through compositional variation has been demonstrated via optical absorption measurements. Furthermore, an enhancement of approximately 10 orders of magnitude in the electrical conductivity has been attained by increasing the carbon concentration (x) from 0 to 0.21. Experimental results revealed evidences that the critical carbon concentration xc to form the homogenous h(BN)1-x(C2)x alloys, or the carbon solubility in hBN is about 3.2% at a growth temperature of 1300 °C before carbon clusters form. Based on the predicted phase diagram of cubic (BN)1-x(C2)x and the excellent matches in the structural and thermal properties of hBN and graphite, it is expected that homogenous h(BN)1-x(C2)x alloys with higher x can be achieved and the alloy miscibility gap can be reduced or completely removed by increasing the growth temperature. This is a huge advantage over the InGaN alloy system in which InN decomposes at high temperatures and high growth temperature cannot be utilized to close the miscibility gap. The results indicate that the h(BN)1-x(C2)x alloy system has the potential to tackle the challenging issues facing the emerging two-dimension materials beyond graphene, which include realizing the bandgap engineering, conductivity control, and large wafers of homogeneous films.

  18. Electrical transport properties of (BN-rich hexagonal (BNC semiconductor alloys

    Directory of Open Access Journals (Sweden)

    M. R. Uddin

    2014-08-01

    Full Text Available The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BNC, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN and electrical conductivity control (from semi-metal for graphite to insulator for undoped h-BN through alloying and have the potential to complement III-nitride wide bandgap semiconductors and carbon based nanostructured materials. Epilayers of (BN-rich h-(BN1-x(C2x alloys were synthesized by metal-organic chemical vapor deposition (MOCVD on (0001 sapphire substrates. Hall-effect measurements revealed that homogeneous (BN-rich h-(BN1-x(C2x alloys are naturally n-type. For alloys with x = 0.032, an electron mobility of about 20 cm2/Vs at 650 °K was measured. X-ray photoelectron spectroscopy (XPS was used to determine the chemical composition and analyze chemical bonding states. Both composition and chemical bonding analysis confirm the formation of alloys. XPS results indicate that the carbon concentration in the alloys increases almost linearly with the flow rate of the carbon precursor (propane (C3H8 employed during the epilayer growth. XPS chemical bonding analysis showed that these MOCVD grown alloys possess more C-N bonds than C-B bonds, which possibly renders the undoped h-(BN1-x(C2x alloys n-type and corroborates the Hall-effect measurement results.

  19. Boron nanoparticles inhibit turnour growth by boron neutron capture therapy in the murine B16-OVA model

    DEFF Research Database (Denmark)

    Petersen, Mikkel Steen; Petersen, Charlotte Christie; Agger, Ralf;

    2008-01-01

    Background: Boron neutron capture therapy usually relies on soluble, rather than particulate, boron compounds. This study evaluated the use of a novel boron nanoparticle for boron neutron capture therapy. Materials and Methods: Two hundred and fifty thousand B16-OVA tumour cells, pre...

  20. Anisotropic thermal conductivity of magnetic fluids

    Institute of Scientific and Technical Information of China (English)

    Xiaopeng Fang; Yimin Xuan; Qiang Li

    2009-01-01

    Considering the forces acting on the particles and the motion of the particles, this study uses a numerical simulation to investigate the three-dimensional microstructure of the magnetic fluids in the presence of an external magnetic field. A method is proposed for predicting the anisotropic thermal conductivity of magnetic fluids. By introducing an anisotropic structure parameter which characterizes the non-uniform distribution of particles suspended in the magnetic fluids, the traditional Maxwell formula is modified and extended to calculate anisotropic thermal conductivity of the magnetic fluids. The results show that in the presence of an external magnetic field the magnetic nanoparticles form chainlike clusters along the direction of the external magnetic field, which leads to the fact that the thermal conduc-tivity of the magnetic fluid along the chain direction is bigger than that along other directions. The thermal conductivity of the magnetic fluids presents an anisotropic feature. With the increase of the magnetic field strength the chainlike clusters in the magnetic fluid appear to be more obvious, so that the anisotropic feature of heat conduction in the fluids becomes more evident.

  1. Effective medium theory for anisotropic metamaterials

    KAUST Repository

    Zhang, Xiujuan

    2015-01-20

    Materials with anisotropic material parameters can be utilized to fabricate many fascinating devices, such as hyperlenses, metasolids, and one-way waveguides. In this study, we analyze the effects of geometric anisotropy on a two-dimensional metamaterial composed of a rectangular array of elliptic cylinders and derive an effective medium theory for such a metamaterial. We find that it is possible to obtain a closed-form analytical solution for the anisotropic effective medium parameters, provided the aspect ratio of the lattice and the eccentricity of the elliptic cylinder satisfy certain conditions. The derived effective medium theory not only recovers the well-known Maxwell-Garnett results in the quasi-static regime, but is also valid beyond the long-wavelength limit, where the wavelength in the host medium is comparable to the size of the lattice so that previous anisotropic effective medium theories fail. Such an advance greatly broadens the applicable realm of the effective medium theory and introduces many possibilities in the design of structures with desired anisotropic material characteristics. A real sample of a recently theoretically proposed anisotropic medium, with a near-zero index to control the flux, is achieved using the derived effective medium theory, and control of the electromagnetic waves in the sample is clearly demonstrated.

  2. Anisotropic matching principle for the hydrodynamic expansion

    Science.gov (United States)

    Tinti, Leonardo

    2016-10-01

    Following the recent success of anisotropic hydrodynamics, I propose here a new, general prescription for the hydrodynamic expansion around an anisotropic background. The anisotropic distribution fixes exactly the complete energy-momentum tensor, just like the effective temperature fixes the proper energy density in the ordinary expansion around local equilibrium. This means that momentum anisotropies are already included at the leading order, allowing for large pressure anisotropies without the need of a next-to-leading-order treatment. The first moment of the Boltzmann equation (local four-momentum conservation) provides the time evolution of the proper energy density and the four-velocity. Differently from previous prescriptions, the dynamic equations for the pressure corrections are not derived from the zeroth or second moment of the Boltzmann equation, but they are taken directly from the exact evolution given by the Boltzmann equation. As known in the literature, the exact evolution of the pressure corrections involves higher moments of the Boltzmann distribution, which cannot be fixed by the anisotropic distribution alone. Neglecting the next-to-leading-order contributions corresponds to an approximation, which depends on the chosen form of the anisotropic distribution. I check the the effectiveness of the leading-order expansion around the generalized Romatschke-Stricklad distribution, comparing with the exact solution of the Boltzmann equation in the Bjorken limit with the collisional kernel treated in the relaxation-time approximation, finding an unprecedented agreement.

  3. Hexagon OPE resummation and multi-Regge kinematics

    Science.gov (United States)

    Drummond, J. M.; Papathanasiou, G.

    2016-02-01

    We analyse the OPE contribution of gluon bound states in the double scaling limit of the hexagonal Wilson loop in planar {N}=4 super Yang-Mills theory. We provide a systematic procedure for perturbatively resumming the contributions from single-particle bound states of gluons and expressing the result order by order in terms of two-variable polylogarithms. We also analyse certain contributions from two-particle gluon bound states and find that, after analytic continuation to the 2 → 4 Mandelstam region and passing to multi-Regge kinematics (MRK), only the single-particle gluon bound states contribute. From this double-scaled version of MRK we are able to reconstruct the full hexagon remainder function in MRK up to five loops by invoking single-valuedness of the results.

  4. Calculation of Accurate Hexagonal Discontinuity Factors for PARCS

    Energy Technology Data Exchange (ETDEWEB)

    Pounders. J., Bandini, B. R. , Xu, Y, and Downar, T. J.

    2007-11-01

    In this study we derive a methodology for calculating discontinuity factors consistent with the Triangle-based Polynomial Expansion Nodal (TPEN) method implemented in PARCS for hexagonal reactor geometries. The accuracy of coarse-mesh nodal methods is greatly enhanced by permitting flux discontinuities at node boundaries, but the practice of calculating discontinuity factors from infinite-medium (zero-current) single bundle calculations may not be sufficiently accurate for more challenging problems in which there is a large amount of internodal neutron streaming. The authors therefore derive a TPEN-based method for calculating discontinuity factors that are exact with respect to generalized equivalence theory. The method is validated by reproducing the reference solution for a small hexagonal core.

  5. Utility based Power Control with FEC in Hexagonally deployed WSN

    Directory of Open Access Journals (Sweden)

    Rajendran Valli

    2012-03-01

    Full Text Available The fundamental component of resource management in Wireless Sensor Network (WSN is transmitter power control since they are miniature battery powered devices. An efficient power control technique is essential to maintain reliable communication links in WSN and to maintain the battery life of the sensor node and in turn the sensor network. Error control coding (ECC schemes can improve the system performance and has an impact on energy consumption. This paper analyses a game theoretic model with pricing for power control in a sensor network considering ECC for random, square, triangular and hexagonal deployment schemes. The performance of the proposed power control scheme with RS and MIDRS code for WSN is evaluated in terms of utility, and energy consumption. Simulation results show that, for hexagonal deployment scheme, with the inclusion of ECC, the transmitting power of the nodes is reduced thereby saving energy and increasing the network lifetime

  6. Topological states in two-dimensional hexagon lattice bilayers

    Science.gov (United States)

    Zhang, Ming-Ming; Xu, Lei; Zhang, Jun

    2016-10-01

    We investigate the topological states of the two-dimensional hexagon lattice bilayer. The system exhibits a quantum valley Hall (QVH) state when the interlayer interaction t⊥ is smaller than the nearest neighbor hopping energy t, and then translates to a trivial band insulator state when t⊥ / t > 1. Interestingly, the system is found to be a single-edge QVH state with t⊥ / t = 1. The topological phase transition also can be presented via changing bias voltage and sublattice potential in the system. The QVH states have different edge modes carrying valley current but no net charge current. The bias voltage and external electric field can be tuned easily in experiments, so the present results will provide potential application in valleytronics based on the two-dimensional hexagon lattice.

  7. Colorimetric Sugar Sensing Using Boronic Acid-Substituted Azobenzenes

    OpenAIRE

    Yuya Egawa; Ryotaro Miki; Toshinobu Seki

    2014-01-01

    In association with increasing diabetes prevalence, it is desirable to develop new glucose sensing systems with low cost, ease of use, high stability and good portability. Boronic acid is one of the potential candidates for a future alternative to enzyme-based glucose sensors. Boronic acid derivatives have been widely used for the sugar recognition motif, because boronic acids bind adjacent diols to form cyclic boronate esters. In order to develop colorimetric sugar sensors, boronic acid-conj...

  8. Synthesis and characterization of ammonium phosphate fertilizers with boron

    OpenAIRE

    ANGELA MAGDA; RODICA PODE; CORNELIA MUNTEAN; MIHAI MEDELEANU; ALEXANDRU POPA

    2010-01-01

    The concentration of boron, an essential micronutrient for plants, presents a narrow range between deficiency and toxicity. In order to provide the boron requirement for plants, and to avoid toxicity problems, boron compounds are mixed with basic fertilizers. Sodium borate pentahydrate was used as a boron source. Ammonium orthophosphates fertilizers with boron were prepared by neutralizing phosphoric acid with ammonia and addition of variable amounts of sodium tetraborate pentahydrate to the ...

  9. Boron-Loaded Silicone Rubber Scintillators

    Energy Technology Data Exchange (ETDEWEB)

    Bell, Z.W.; Maya, L.; Brown, G.M.; Sloop, F.V.Jr

    2003-05-12

    Silicone rubber received attention as an alternative to polyvinyltoluene in applications in which the scintillator is exposed to high doses because of the increased resistance of the rubber to the formation of blue-absorbing color centers. Work by Bowen, et al., and Harmon, et al., demonstrated their properties under gamma/x-ray irradiation, and Bell, et al. have shown their response to thermal neutrons. This last work, however, provided an example of a silicone in which both the boron and the scintillator were contained in the rubber as solutes, a formulation which led to the precipitation of solids and sublimation of the boron component. In the present work we describe a scintillator in which the boron is chemically bonded to the siloxane and so avoids the problem of precipitation and loss of boron to sublimation. Material containing up to 18% boron, by weight, was prepared, mounted on photomultipliers, and exposed to both neutron and gamma fluxes. Pulse height spectra showing the neutron and photon response were obtained, and although the light output was found to be much poorer than from samples in which boron was dissolved, the higher boron concentrations enabled essentially 100% neutron absorption in only a few millimeters' thickness of rubber.

  10. General Expression of Elastic Tensor for Anisotropic Materials

    Institute of Scientific and Technical Information of China (English)

    HUANG Bo

    2005-01-01

    In order to formulate a general expression of elastic tensor for anisotropic materials, a method of tensor derivative is used for determining relationship between fourth-order elastic tensor and second-order structure tensor that has satisfied material symmetrical conditions. From this general expression of elastic tensor, specific expressions of elastic tensor for different anisotropic materials, such as isotropic materials, transverse isotropic materials and orthogonal-anisotropic materials, can be deduced. This expression underlies the scalar description of anisotropic factors, which are used for classifying and analyzing anisotropic materials. Cubic crystals are analyzed macroscopically by means of the general expression and anisotropic factor.

  11. Detection of Gaussian signals via hexagonal sensor networks

    OpenAIRE

    Frasca, Paolo; Mason, Paolo; Piccoli, Benedetto

    2009-01-01

    This paper considers a special case of the problem of identifying a static scalar signal, depending on the location, using a planar network of sensors in a distributed fashion. Motivated by the application to monitoring wild-fires spreading and pollutants dispersion, we assume the signal to be Gaussian in space. Using a network of sensors positioned to form a regular hexagonal tessellation, we prove that each node can estimate the parameters of the Gaussian from local measurements. Moreover, ...

  12. HEXAN - a hexagonal nodal code for solving the diffusion equation

    International Nuclear Information System (INIS)

    This report describes the theory of and provides a user's manual for the HEXAN program, which is a nodal program for the solution of the few-group diffusion equation in hexagonal geometry. Based upon symmetry considerations, the theory provides an analytical solution in a homogeneous node. WWER and HTGR test problem solutions are presented. The equivalence of the finite-difference scheme and the response matrix method is proven. The properties of a symmetric node's response matrix are investigated. (author)

  13. Hexagonal eutectic solidification patterns operating near a marginal stability point

    OpenAIRE

    Perrut, Mikael; Akamatsu, Silvère; Bottin-Rousseau, Sabine; Faivre, Gabriel

    2008-01-01

    We study the long-time dynamics of hexagonal directional-solidification patterns in bulk samples of a transparent eutectic alloy using an optical method which permits real-time observation of the growth front. A slow dilatation of the patterns due to a slight curvature of the isotherms drives the system into a permanent regime, close to the threshold for the rod splitting instability. Thus an apparently minor instrumental imperfection suffices to maintain the system near a marginal stability ...

  14. First principle study of hydrogen behavior in hexagonal tungsten carbide

    OpenAIRE

    Kong, Xiang-Shan; You, Yu-Wei; Liu, C. S.; Q. F. Fang; Chen, Jun-Ling; Luo, G.-N.

    2010-01-01

    Understanding the behavior of hydrogen in hexagonal tungsten carbide (WC) is of particular interest for fusion reactor design due to the presence of WC in the divertor of fusion reactors. Therefore, we use first-principles calculations to study the hydrogen behavior in WC. The most stable interstitial site for the hydrogen atom is the projection of the octahedral interstitial site on tungsten basal plane, followed by the site near the projection of the octahedral interstitial site on carbon b...

  15. Competing structures in two dimensions: Square-to-hexagonal transition

    Science.gov (United States)

    Gränz, Barbara; Korshunov, Sergey E.; Geshkenbein, Vadim B.; Blatter, Gianni

    2016-08-01

    We study a system of particles in two dimensions interacting via a dipolar long-range potential D /r3 and subject to a square-lattice substrate potential V (r ) with amplitude V and lattice constant b . The isotropic interaction favors a hexagonal arrangement of the particles with lattice constant a , which competes against the square symmetry of the underlying substrate lattice. We determine the minimal-energy states at fixed external pressure p generating the commensurate density n =1 /b2=(4/3 ) 1 /2/a2 in the absence of thermal and quantum fluctuations, using both analytical techniques based on the harmonic and continuum elastic approximations as well as numerical relaxation of particle configurations. At large substrate amplitude V >0.2 eD, with eD=D /b3 the dipolar energy scale, the particles reside in the substrate minima and hence arrange in a square lattice. Upon decreasing V , the square lattice turns unstable with respect to a zone-boundary shear mode and deforms into a period-doubled zigzag lattice. Analytic and numerical results show that this period-doubled phase in turn becomes unstable at V ≈0.074 eD towards a nonuniform phase developing an array of domain walls or solitons; as the density of solitons increases, the particle arrangement approaches that of a rhombic (or isosceles triangular) lattice. At a yet smaller substrate value estimated as V ≈0.046 eD, a further solitonic transition establishes a second nonuniform phase which smoothly approaches the hexagonal (or equilateral triangular) lattice phase with vanishing amplitude V . At small but finite amplitude V , the hexagonal phase is distorted and hexatically locked at an angle of φ ≈3 .8∘ with respect to the substrate lattice. The square-to-hexagonal transformation in this two-dimensional commensurate-incommensurate system thus involves a complex pathway with various nontrivial lattice- and modulated phases.

  16. Electrons on Hexagonal lattices and applications to nanotubes

    OpenAIRE

    Hartmann, B.; Zakrzewski, W. J.

    2003-01-01

    We consider a Fröhlich-type Hamiltonian on a hexagonal lattice. Aiming to describe nanotubes, we choose this two-dimensional lattice to be periodic and to have a large extension in one (x) direction and a small extension in the other (y) direction. We study the existence of solitons in this model using both analytical and numerical methods. We find exact solutions of our equations and discuss some of their properties.

  17. The determination of boron and carbon in reactor grade boron carbide

    International Nuclear Information System (INIS)

    The sealed tube method of dissolution at high temperature and pressure has been successfully applied in the analysis of reactor grade boron carbide for the determination of boron. A 50 mg sample of boron carbide is completely dissolved by heating with concentrated nitric acid in a sealed tube at 3000C. The boron content of the resultant sample solution is determined by the mannitol potentiometric titration method. The precision of the method for the determination of 2.5 mg of boron using the Harwell automatic potentiometric titrator is 0.2% (coefficient of variation). The carbon content of a boron carbide sample is determined by combustion of the sample at 10500C in a stream of oxygen using vanadium pentoxide to ensure the complete oxidation of the sample. The carbon dioxide produced from the sample is measured manometrically and the precision of the method for the determination of 4 mg of carbon is 0.4% (coefficient of variation). (author)

  18. The Role of Catalytic Substrate Morphology on the Shape and Domain Size of Two-Dimensional Boron Nitride Sheets

    Science.gov (United States)

    Griep, Mark; Tay, Roland; Tumlin, Travis; Teo, Edwin; Mallick, Govind; Karna, Shashi

    2014-03-01

    Two-dimensional (2D) nanomaterials, including graphene and boron nitride (BN), has been of intense interest in recent years due to their exceptional electronic, thermal, and mechanical properties. Tailoring these novel properties to their maximum potential requires precise control of the atomic layer growth process. In recent years, catalytic growth of 2-D nanomaterials using chemical vapor deposition (CVD) process has emerged as an attractive approach due to their low-cost, scalalibility, and ability totransfer the grown materials on various substrates. In this approach, The the morphology and purity of the catalytic surface plays a critical role on the shape, size, and growth kintectics of the 2D nanomaterial. In this work, we present the results of our systematic studies of the role of catalytic surface morphology on the shape and domain size of CVD grown hexagonal boron nitride (hBN) films. The present work clearly demonstrates that that the presence of surface roghness in the form of ridges leads to a preferential growth of small-domain triangular BN sheets. A 10 to 100-fold reduction in the surfcae roughness leads to increased domain BN triangles, eventually transitioning to large-domain hexagonal shaped hBN sheets.

  19. Study of some defects observed in the hexagonal liquid crystals

    International Nuclear Information System (INIS)

    A polarising microscopy study of the disclinations in an hexagonal discotic liquid crystal (hexa-pentoxy-triphenylene) allows us to confirm the theory of the developable domains and the existence of the disclinations as involute of the circle. The absence of the lines S = 1 leads us to propose a model of core in which the energetic instability of these lines is emphasized. The nature of the core is discussed: it is probably filled with hexagonal liquid crystal. Moreover the birefringence Δn is measured and a first estimate of the anchoring energies of the discotic both on the glass and in contact with the air is given. The Michelson interferometry study of the interaction between the disclinations and the free surface has allowed to observe a strong anisotropy of the interfacial tension. At last a study of the walls leads to a classification according to the matching angle and to a first estimate of the penetration distance λ. A similar study has been undertaken in an inverse middle liquid crystalline phase (Na dioctylsulfosuccinate). A strong dependence of the elastic constants with the water concentration is observed. The micellar → hexagonal transition is studied. (author)

  20. The Veldkamp Space of the Smallest Slim Dense Near Hexagon

    CERN Document Server

    Green, Richard M

    2009-01-01

    We give a detailed description of the Veldkamp space of the smallest slim dense near hexagon. This space is isomorphic to PG(7, 2) and its 2^8 - 1 = 255 Veldkamp points (that is, geometric hyperplanes of the near hexagon) fall into five distinct classes, each of which is uniquely characterized by the number of points/lines as well as by a sequence of the cardinalities of points of given orders and/or that of (grid-)quads of given types. For each type we also give its weight, stabilizer group within the full automorphism group of the near hexagon and the total number of copies. The totality of (255 choose 2)/3 = 10795 Veldkamp lines split into 41 different types. We give a complete classification of them in terms of the properties of their cores (i. e., subconfigurations of points and lines common to all the three hyperplanes comprising a given Veldkamp line) and the types of the hyperplanes they are composed of. These findings may lend themselves into important physical applications, especially in view of rec...