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Sample records for angular dependent magnetoresistance

  1. Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Sun, J.R.; Zhao, T.Y.

    2009-01-01

    The temperature and magnetic field dependence of angular dependent magnetoresistance (AMR) along two orthogonal directions ([100] and [01]) was investigated in a charge-orbital-ordered Sm0.5Ca0.5MnO3 (SCMO) film grown on (011)-oriented SrTiO3 substrates. A dramatic decrease of AMR magnitude in bo...

  2. Angular dependence of critical current density and magnetoresistance of sputtered high-T{sub c}-films

    Energy Technology Data Exchange (ETDEWEB)

    Geerkens, A.; Frenck, H.J.; Ewert, S. [Technical Univ. of Cottbus (Germany)] [and others

    1994-12-31

    The angular dependence of the critical current density and the magnetoresistance of high-T{sub c}-films in high and low magnetic fields and for different temperatures were measured to investigate the flux pinning and the superconducting properties. A comparison of the results for the different superconductors shows their increasing dependence on the angle {Theta} between the magnetic field and the c-axis of the film due to the anisotropy of the chosen superconductor. Furthermore the influence of the current direction to the {Theta}-rotation plane is discussed.

  3. Current dependent angular magnetoresistance in strongly Pr-doped Y Ba2Cu3O7-δ single crystal

    International Nuclear Information System (INIS)

    Sandu, V; Gyawali, P; Katuwal, T; Almasan, C C; Taylor, B J; Maple, M B

    2009-01-01

    We report a strong dependence of the angular magnetoresistance (AMR) on the current density in Y Ba 2 Cu 3 O 7-δ single crystal above the critical temperature T c = 13 K for any applied field up to 14 T. We estimated the current dependence from the angular dependence of the top resistance R top , as measured on the face where the current is applied, and the bottom resistance R bot as measured on the opposite face. At any temperature, both below and above T c , R top decreases as the field becomes parallel to the current and ab-plane with an angle dependence that suggests an important contribution arising from the vortex flow. R bot evolves from a monotonic to nonmonotonic angle dependence with three minima and two maxima in the angle range 0 - 180 deg. as the temperature increases. For less Pr-doped samples, Y 0.58 Pr 0.42 Ba 2 Cu 3 O 7-δ (T c = 39 K) and Y 0.68 rP 0.32 Ba 2 Cu 3 O 7-δ (T c = 55 K), where the interplane resistivity is much lower, both R top and R bot follow the same monotonic angle dependence in all temperature and field range.

  4. Angular dependencies of longitudinal magnetoresistivity and planar Hall effect of single and multilayered thin films

    International Nuclear Information System (INIS)

    Ko, T.W.; Lee, J.H.; Park, B.K.; Rhie, K.; Jang, P.W.; Hwang, D.G.; Lee, S.S.; Kim, M.Y.; Rhee, J.R.

    1998-01-01

    Magnetoresistivity and planar Hall effect of a Glass/Fe70A/[Co21A/Cu25A] 20 multilayer coupled antiferromagnetically a single layer (Co81Nb19) thin film, and NiO based Glass/Ni350A/Py50A/Cu20A/Py50A (Py = Ni 83 Fe 17 ) spin value are studied. Planar Hall resistivity is analysed concurrently with the resistivity of the sample. With variation of direction and strength of the applied fields, we found that the magnetization process affects significantly the planar Hall effect. We developed a simple method to find the easy axis of single layer magnetic thin films. We also observed the variation of magnetization of each layer separately for an antiferromagnetically coupled multilayer, and a NiO-based spin value with the planar Hall effect. (author)

  5. Angular-dependent magnetoresistance study in Ca0.73La0.27FeAs2: a 'parent' compound of 112-type iron pnictide superconductors.

    Science.gov (United States)

    Xing, Xiangzhuo; Xu, Chunqiang; Li, Zhanfeng; Feng, Jiajia; Zhou, Nan; Zhang, Yufeng; Sun, Yue; Zhou, Wei; Xu, Xiaofeng; Shi, Zhixiang

    2017-12-07

    We report a study of angular-dependent magnetoresistance (AMR) with the magnetic field rotated in the plane perpendicular to the current on a Ca 0.73 La 0.27 FeAs 2 single crystal, which is regarded as a 'parent' compound of 112-type iron pnictide superconductors. A pronounced AMR with twofold symmetry is observed, signifying the highly anisotropic Fermi surface. By further analyzing the AMR data, we find that the Fermi surface above the structural/antiferromagnetic (AFM) transition (T s /T N ) is quasi-two-dimensional (quasi-2D), as revealed by the 2D scaling behavior of the AMR, Δρ/ρ(0) (H, θ)  =  Δρ/ρ(0) (µ 0 Hcosθ), θ being the magnetic field angle with respect to the c axis. While such 2D scaling becomes invalid at temperatures below T s /T N , the three-dimensional (3D) scaling approach by inclusion of the anisotropy of the Fermi surface is efficient, indicating that the appearance of the 3D Fermi surface contributes to anisotropic electronic transport. Compared with other experimental observations, we suspect that the additional 3D hole pocket (generated by the Ca d orbital and As1 p z orbital) around the Γ point in CaFeAs 2 will disappear in the heavily electron doped regime, and moreover, the Fermi surface should be reconstructed across the structural/AFM transition. Besides, a quasi-linear in-plane magnetoresistance with H//ab is observed at low temperatures and its possible origins are also discussed. Our results provide more information to further understand the electronic structure of 112-type IBSs.

  6. Angular-dependent magnetoresistance study in Ca0.73La0.27FeAs2: a "parent" compound of 112-type iron pnictide superconductors.

    Science.gov (United States)

    Xing, Xiangzhuo; Xu, Chunqiang; Li, Zhanfeng; Feng, Jiajia; Zhou, Nan; Zhang, Yufeng; Sun, Yue; Zhou, Wei; Xu, Xiaofeng; Shi, Zhixiang

    2017-11-21

    We report a study of angular-dependent magnetoresistance (AMR) with the magnetic field rotated in the plane perpendicular to the current on a Ca0.73La0.27FeAs2 single crystal, which is regarded as a "parent" compound of 112-type iron pnictide superconductors. A pronounced AMR with twofold symmetry is observed, signifying the highly anisotropic Fermi surface. By further analyzing the AMR data, we find that the Fermi surface above the structural/antiferromagnetic (AFM) transition (Ts/TN) is quasi-two-dimensional (2D), as revealed by the 2D scaling behavior of the AMR, Δρ/ρ(0) (H, θ)=Δρ/ρ(0) (μ0Hcosθ), θ being the magnetic field angle with respect to the c axis. While such a 2D scaling becomes invalid at temperatures below Ts/TN, the three-dimensional (3D) scaling approach by inclusion of the anisotropy of Fermi surface is efficient, indicating that the appearance of 3D Fermi surface contributed to the anisotropic electronic transport. Compared with other experimental observations, we suspect that the additional 3D hole pocket (generated by the Ca d orbital and As1 pz orbital) around the Γ point in CaFeAs2 will disappear in the heavily electron doped regime, and moreover, the Fermi surface should be reconstructed across the structural/AFM transition. Besides, a quasi-linear in-plane magnetoresistance is observed at low temperatures and its possible origins are also discussed. Our results provide more information to further understand the electronic structure of 112-type IBSs. © 2017 IOP Publishing Ltd.

  7. Angular Magnetoresistance and Hall Measurements in New Dirac Material, ZrSiS

    Science.gov (United States)

    Ali, Mazhar; Schoop, Leslie; Lotsch, Bettina; Parkin, Stuart

    Dirac and Weyl materials have shot to the forefront of condensed matter research in the last few years. Recently, the square-net material, ZrSiS, was theorized and experimentally shown (via ARPES) to host several highly dispersive Dirac cones, including the first Dirac cone demanded by non-symmorphic symmetry in a Si square net. Here we report the magnetoresistance and Hall Effect measurements in this compound. ZrSiS samples with RRR = 40 were found to have MR values up to 6000% at 2 K, be predominantly p-type with a carrier concentration of ~8 x 1019 cm-3 and mobility ~8500 cm2/Vs. Angular magnetoresistance measurements reveal a peculiar behavior with multiple local maxima, depending on field strength, indicating of a sensitive and sensitive Fermi surface. SdH oscillations analysis confirms Hall and angular magnetoresistance measurements. These results, in the context of the theoretical and ARPES results, will be discussed.

  8. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    KAUST Repository

    Mohammed, Hanan

    2017-06-22

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  9. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    KAUST Repository

    Mohammed, Hanan; Corte-Leon, H.; Ivanov, Yurii P.; Moreno, J. A.; Kazakova, O.; Kosel, Jü rgen

    2017-01-01

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  10. Angular-dependent magnetoresistance study in Ca0.73La0.27FeAs2: a ‘parent’ compound of 112-type iron pnictide superconductors

    Science.gov (United States)

    Xing, Xiangzhuo; Xu, Chunqiang; Li, Zhanfeng; Feng, Jiajia; Zhou, Nan; Zhang, Yufeng; Sun, Yue; Zhou, Wei; Xu, Xiaofeng; Shi, Zhixiang

    2018-01-01

    We report a study of angular-dependent magnetoresistance (AMR) with the magnetic field rotated in the plane perpendicular to the current on a Ca0.73La0.27FeAs2 single crystal, which is regarded as a ‘parent’ compound of 112-type iron pnictide superconductors. A pronounced AMR with twofold symmetry is observed, signifying the highly anisotropic Fermi surface. By further analyzing the AMR data, we find that the Fermi surface above the structural/antiferromagnetic (AFM) transition (T s/T N) is quasi-two-dimensional (quasi-2D), as revealed by the 2D scaling behavior of the AMR, Δρ/ρ(0) (H, θ)  =  Δρ/ρ(0) (µ 0 Hcosθ), θ being the magnetic field angle with respect to the c axis. While such 2D scaling becomes invalid at temperatures below T s/T N, the three-dimensional (3D) scaling approach by inclusion of the anisotropy of the Fermi surface is efficient, indicating that the appearance of the 3D Fermi surface contributes to anisotropic electronic transport. Compared with other experimental observations, we suspect that the additional 3D hole pocket (generated by the Ca d orbital and As1 p z orbital) around the Γ point in CaFeAs2 will disappear in the heavily electron doped regime, and moreover, the Fermi surface should be reconstructed across the structural/AFM transition. Besides, a quasi-linear in-plane magnetoresistance with H//ab is observed at low temperatures and its possible origins are also discussed. Our results provide more information to further understand the electronic structure of 112-type IBSs.

  11. The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

    Directory of Open Access Journals (Sweden)

    Z. H. Zhang

    2015-03-01

    Full Text Available The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.

  12. Angle Dependence of the Orbital Magnetoresistance in Bismuth

    Directory of Open Access Journals (Sweden)

    Aurélie Collaudin

    2015-06-01

    Full Text Available We present an extensive study of angle-dependent transverse magnetoresistance in bismuth, with a magnetic field perpendicular to the applied electric current and rotating in three distinct crystallographic planes. The observed angular oscillations are confronted with the expectations of semiclassic transport theory for a multivalley system with anisotropic mobility and the agreement allows us to quantify the components of the mobility tensor for both electrons and holes. A quadratic temperature dependence is resolved. As Hartman argued long ago, this indicates that inelastic resistivity in bismuth is dominated by carrier-carrier scattering. At low temperature and high magnetic field, the threefold symmetry of the lattice is suddenly lost. Specifically, a 2π/3 rotation of magnetic field around the trigonal axis modifies the amplitude of the magnetoresistance below a field-dependent temperature. By following the evolution of this anomaly as a function of temperature and magnetic field, we map the boundary in the (field, temperature plane separating two electronic states. In the less symmetric state, confined to low temperature and high magnetic field, the three Dirac valleys cease to be rotationally invariant. We discuss the possible origins of this spontaneous valley polarization, including a valley-nematic scenario.

  13. In-Plane Angular Effect of Magnetoresistance of Quasi-One-Dimensional Organic Metals, (DMET) 2AuBr 2 and (TMTSF) 2ClO 4

    Science.gov (United States)

    Yoshino, Harukazu; Saito, Kazuya; Nishikawa, Hiroyuki; Kikuchi, Koichi; Kobayashi, Keiji; Ikemoto, Isao

    1997-08-01

    Comparative study is presented for the in-plane angular effect of magnetoresistance of quasi-one-dimensional organic conductors, (DMET)2AuBr2 and (TMTSF)2ClO4. The magnetoresistance for the magnetic and electrical fields parallel and perpendicular to the most conducting plane, respectively, was measured at 4.2 K and up to 7.0 T. (DMET)2AuBr2 shows an anomalous hump in the field-orientation dependence of the magnetoresistance for the magnetic field nearly parallel to the most conducting axis and this is very similar to what previously reported for (DMET)2I3. Weak anomaly was detected for the magnetoresistance of (TMTSF)2ClO4 in the Relaxed state, while no anomaly was observed in the SDW phase in the Quenched state. By comparing the numerical angular derivatives of the magnetoresistance, it is shown that the anomaly in the in-plane angular effect continuously develops from zero magnetic field and is closely related to the quasi-one-dimensional Fermi surface. A simple method is proposed to estimate the anisotropy of the transfer integral from the width of the hump anomaly.

  14. Angular dependence of shallow dose

    International Nuclear Information System (INIS)

    Alvarez, J.L.

    1986-01-01

    The theoretical response of a detector is discussed and compared to measurements of shallow dose with tissue and phantom response detectors. A definite energy dependent angular response of dose and measurement was observed which could not be explained by simple trigonometric arguments. The response is back scatter dependent and must be considered in detector design and dose measurements. It is not possible for standard detectors to follow this response

  15. Resistivity dependence of magnetoresistance in Co/ZnO films.

    Science.gov (United States)

    Quan, Zhi-Yong; Zhang, Li; Liu, Wei; Zeng, Hao; Xu, Xiao-Hong

    2014-01-06

    We report the dependence of magnetoresistance effect on resistivity (ρ) in Co/ZnO films deposited by magnetron sputtering at different sputtering pressures with different ZnO contents. The magnitude of the resistivity reflects different carrier transport regimes ranging from metallic to hopping behaviors. Large room-temperature magnetoresistance greater than 8% is obtained in the resistivity range from 0.08 to 0.5 Ω · cm. The magnetoresistance value decreases markedly when the resistivity of the films is less than 0.08 Ω · cm or greater than 0.5 Ω · cm. When 0.08 Ω · cm magnetoresistance effect. When ρ > 0.5 Ω · cm, the spin-independent higher-order hopping (N > 2) comes into play and decreases the tunneling magnetoresistance value. For the samples with ρ magnetoresistance is mainly ascribed to the formation of percolation paths through interconnected elongated metallic Co particles. This observation is significant for the improvement of room-temperature magnetoresistance value for future spintronic devices.

  16. Temperature dependence of magnetoresistance in lanthanum manganite ceramics

    International Nuclear Information System (INIS)

    Gubkin, M.K.; Zalesskii, A.V.; Perekalina, T.M.

    1996-01-01

    Magnetoresistivity in the La0.9Na0.1Mn0.9(V,Co)0.1O3 and LaMnO3+δ ceramics was studied. The temperature dependence of magnetoresistance in these specimens was found to differ qualitatively from that in the La0.9Na0.1MnO3 single crystal (the magnetoresistance value remains rather high throughout the measurement range below the Curie temperature), with the maximum values being about the same (20-40% in the field of 20 kOe). Previously published data on magnetization, high frequency magnetic susceptibility, and local fields at the 139La nuclei of the specimens with similar properties attest to their magnetic inhomogeneity. The computation of the conductivity of the nonuniformly ordered lanthanum manganite was performed according to the mean field theory. The calculation results allow one to interpret qualitatively various types of experimental temperature dependences of magnetoresistance

  17. Systematic study of doping dependence on linear magnetoresistance in p-PbTe

    International Nuclear Information System (INIS)

    Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.; Peres, M. L.; Castro, S. de; Soares, D. A. W.; Wiedmann, S.; Zeitler, U.; Abramof, E.; Rappl, P. H. O.; Mengui, U. A.

    2014-01-01

    We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF 2 exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30 T. The linear magnetoresistance slope ΔR/ΔB is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF 2 doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.

  18. Angular studies of the magnetoresistance in the density wave state of the quasi-two-dimensional purple bronze KMo6O17

    Science.gov (United States)

    Guyot, H.; Dumas, J.; Kartsovnik, M. V.; Marcus, J.; Schlenker, C.; Sheikin, I.; Vignolles, D.

    2007-07-01

    The purple molybdenum bronze KMo6O17 is a quasi-two-dimensional compound which shows a Peierls transition towards a commensurate metallic charge density wave (CDW) state. High magnetic field measurements have revealed several transitions at low temperature and have provided an unusual phase diagram “temperature-magnetic field”. Angular studies of the interlayer magnetoresistance are now reported. The results suggest that the orbital coupling of the magnetic field to the CDW is the most likely mechanism for the field induced transitions. The angular dependence of the magnetoresistance is discussed on the basis of a warped quasi-cylindrical Fermi surface and provides information on the geometry of the Fermi surface in the low temperature density wave state.

  19. Angular dependence of the exchange bias for the bistable state

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Yuhao [College of Physics and Electronic Information, Shanxi Normal University, Linfen 041004 (China); Research College of materials science, Shanxi Normal University, Linfen 041004 (China); Xu, Xiaohong, E-mail: xuxh@dns.sxnu.edu.cn [Research College of materials science, Shanxi Normal University, Linfen 041004 (China); Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004 (China)

    2017-06-15

    The angular dependence of the exchange bias (ADEB) has been investigated in detail when the exchange-coupled ferromagnetic (FM)/antiferromagnetic (AFM) bilayer is in the bistable state. Complete and incomplete jump phenomena were found at the intrinsic easy and hard axes, when they pass through two special positions making the angular deviation of 58.2826° and 121.7174° from the easy axis of the uniaxial anisotropy, respectively. The combination of these different types of the jump phenomena at the intrinsic easy and hard axes yields five distinct types of the ADEB. The physical condition for each type of ADEB is established. Additionally, the extreme value problem of the exchange bias field and coercivity are also discussed, which is an important technological issue in the design of the magnetoresistive and spintronic devices. These results enable us to make a comprehensive understanding of the experimental ADEB curves.

  20. Development of Magneto-Resistive Angular Position Sensors for Space Applications

    Science.gov (United States)

    Hahn, Robert; Langendorf, Sven; Seifart, Klaus; Slatter, Rolf; Olberts, Bastian; Romera, Fernando

    2015-09-01

    Magnetic microsystems in the form of magneto- resistive (MR) sensors are firmly established in automobiles and industrial applications. They measure path, angle, electrical current, or magnetic fields. MR technology opens up new sensor possibilities in space applications and can be an enabling technology for optimal performance, high robustness and long lifetime at reasonable costs. In a recent assessment study performed by HTS GmbH and Sensitec GmbH under ESA Contract a market survey has confirmed that space industry has a very high interest in novel, contactless position sensors based on MR technology. Now, a detailed development stage is pursued, to advance the sensor design up to Engineering Qualification Model (EQM) level and to perform qualification testing for a representative pilot space application.The paper briefly reviews the basics of magneto- resistive effects and possible sensor applications and describes the key benefits of MR angular sensors with reference to currently operational industrial and space applications. The results of the assessment study are presented and potential applications and uses of contactless magneto-resistive angular sensors for spacecraft are identified. The baseline mechanical and electrical sensor design will be discussed. An outlook on the EQM development and qualification tests is provided.

  1. Temperature dependence of magnetoresistance in copper single crystals

    Science.gov (United States)

    Bian, Q.; Niewczas, M.

    2018-03-01

    Transverse magnetoresistance of copper single crystals has been measured in the orientation of open-orbit from 2 K to 20 K for fields up to 9 T. The experimental Kohler's plots display deviation between individual curves below 16 K and overlap in the range of 16 K-20 K. The violation of the Kohler's rule below 16 K indicates that the magnetotransport can not be described by the classical theory of electron transport on spherical Fermi surface with a single relaxation time. A theoretical model incorporating two energy bands, spherical and cylindrical, with different relaxation times has been developed to describe the magnetoresistance data. The calculations show that the electron-phonon scattering rates at belly and neck regions of the Fermi surface have different temperature dependencies, and in general, they do not follow T3 law. The ratio of the relaxation times in belly and neck regions decreases parabolically with temperature as A - CT2 , with A and C being constants.

  2. Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions.

    Science.gov (United States)

    Yang, D Z; Wang, T; Sui, W B; Si, M S; Guo, D W; Shi, Z; Wang, F C; Xue, D S

    2015-09-01

    We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a magnetic field of 2 T. At the same time, an asymmetric magnetoresistance, which manifests itself as a magnetoresistance voltage offset with respect to the sign of magnetic field, occurs and linearly increases with magnetoresistance. More interestingly, in contrast with other materials, the lineshape of anisotropic magnetoresistance in silicon p-n junctions significantly depends on temperature. As temperature decreases from 293 K to 100 K, the width of peak shrinks from 90° to 70°. We ascribe these novel magnetoresistance to the asymmetric geometry of the space charge region in p-n junction induced by the magnetic field. In the vicinity of the space charge region the current paths are deflected, contributing the Hall field to the asymmetric magnetoresistance. Therefore, the observed temperature-dependent asymmetry of magnetoresistance is proved to be a direct consequence of the spatial configuration evolution of space charge region with temperature.

  3. Dependence of Fe/Cr superlattice magnetoresistance on orientation of external magnetic field

    International Nuclear Information System (INIS)

    Ustinov, V.V.; Romashev, L.N.; Minin, V.I.; Semerikov, A.V.; Del', A.R.

    1995-01-01

    The paper presents the results of investigations into giant magnetoresistance of [Fe/Cr] 30 /MgO superlattices obtained using molecular-beam epitaxy under various orientations of magnetic field relatively to the layers of superlattice and to the direction of current flow. Theory of orientation dependence of superlattice magnetoresistance enabling to describe satisfactorily behaviour of magnetoresistance at arbitrary direction of magnetic field on the ground of results of magnetoresistance measurements in magnetic field parallel and perpendicular to plane of layers, is elaborated. It is pointed out that it is possible to obtain field dependence of superlattice magnetization on the ground of measurement results. 9 refs., 6 figs

  4. Probabilistic calculation for angular dependence collision

    International Nuclear Information System (INIS)

    Villarino, E.A.

    1990-01-01

    This collision probabilistic method is broadly used in cylindrical geometry (in one- or two-dimensions). It constitutes a powerful tool for the heterogeneous Response Method where, the coupling current is of the cosine type, that is, without angular dependence at azimuthal angle θ and proportional to μ (cosine of the θ polar angle). (Author) [es

  5. Verification of angular dependence in MOSFET detector

    Energy Technology Data Exchange (ETDEWEB)

    Souza, Clayton H.; Shorto, Julian M.B.; Siqueira, Paulo T.D.; Nunes, Maíra G.; Silva Junior, Iremar A.; Yoriyaz, Hélio, E-mail: chsouza@usp.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2017-07-01

    In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of measurement, as well as easy handling. Nevertheless, its true differential is to allow reading of the dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in a patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Experimental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient. (author)

  6. Verification of angular dependence in MOSFET detector

    International Nuclear Information System (INIS)

    Souza, Clayton H.; Shorto, Julian M.B.; Siqueira, Paulo T.D.; Nunes, Maíra G.; Silva Junior, Iremar A.; Yoriyaz, Hélio

    2017-01-01

    In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of measurement, as well as easy handling. Nevertheless, its true differential is to allow reading of the dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in a patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Experimental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient. (author)

  7. Time-dependent angularly averaged inverse transport

    International Nuclear Information System (INIS)

    Bal, Guillaume; Jollivet, Alexandre

    2009-01-01

    This paper concerns the reconstruction of the absorption and scattering parameters in a time-dependent linear transport equation from knowledge of angularly averaged measurements performed at the boundary of a domain of interest. Such measurement settings find applications in medical and geophysical imaging. We show that the absorption coefficient and the spatial component of the scattering coefficient are uniquely determined by such measurements. We obtain stability results on the reconstruction of the absorption and scattering parameters with respect to the measured albedo operator. The stability results are obtained by a precise decomposition of the measurements into components with different singular behavior in the time domain

  8. Study of the temperature dependence of giant magnetoresistance in metallic granular composite

    International Nuclear Information System (INIS)

    Ju Sheng; Li, Z.-Y.

    2002-01-01

    The temperature dependence of the giant magnetoresistance of metallic granular composite is studied. It is considered that the composite contains both large magnetic grains with surface spin S' and small magnetic impurities. It is found that the decrease of surface spin S' of grain is the main cause of an almost linear decrease of giant magnetoresistance with the increase of temperature in high temperature range. The magnetic impurities, composed of several atoms, lead to an almost linear increase of the giant magnetoresistance with the decrease of temperature in low temperature range. Our calculations are in good agreement with recent experimental data for metallic nanogranular composites

  9. Thickness Dependent Interlayer Magnetoresistance in Multilayer Graphene Stacks

    Directory of Open Access Journals (Sweden)

    S. C. Bodepudi

    2016-01-01

    Full Text Available Chemical Vapor Deposition grown multilayer graphene (MLG exhibits large out-of-plane magnetoresistance due to interlayer magnetoresistance (ILMR effect. It is essential to identify the factors that influence this effect in order to explore its potential in magnetic sensing and data storage applications. It has been demonstrated before that the ILMR effect is sensitive to the interlayer coupling and the orientation of the magnetic field with respect to the out-of-plane (c-axis direction. In this work, we investigate the role of MLG thickness on ILMR effect. Our results show that the magnitude of ILMR effect increases with the number of graphene layers in the MLG stack. Surprisingly, thicker devices exhibit field induced resistance switching by a factor of at least ~107. This effect persists even at room temperature and to our knowledge such large magnetoresistance values have not been reported before in the literature at comparable fields and temperatures. In addition, an oscillatory MR effect is observed at higher field values. A physical explanation of this effect is presented, which is consistent with our experimental scenario.

  10. On the role of minority carriers in the frequency dependence of organic magnetoresistance

    NARCIS (Netherlands)

    Janssen, Paul; Wagemans, W.; Verhoeven, Wouter; van der Heijden, E.H.M.; Kemerink, M.; Koopmans, B.

    2011-01-01

    In this work we investigate the frequency dependence of organic magnetoresistance (OMAR) both in small molecule-based (Alq3) and polymer (PPV derivative) materials, and investigate its thickness dependence. For all devices, we observed a strong decrease in magnetoconductance (MC) with increasing

  11. Tunneling magnetoresistance dependence on the temperature in a ferromagnetic Zener diode

    Energy Technology Data Exchange (ETDEWEB)

    Comesana, E; Aldegunde, M; GarcIa-Loureiro, A, E-mail: enrique.comesana@usc.e [Departamento de Electronica e Computacion, Universidade de Santiago de Compostela, 15782 Santiago de Compostela (Spain)

    2009-11-15

    In the present work we focus on the study of the temperature dependence of the tunnelling current in a ferromagnetic Zener diode. We predict the tunneling magnetoresistance dependence on the temperature. Large doping concentrations lead to magnetic semiconductors with Curie temperature T{sub C} near or over room temperature and this will facilitate the introduction of new devices that make use of the ferromagnetism effects. According to our calculations the tunneling magnetoresistance has the form TMR {proportional_to} (T{sup n}{sub C}-T{sup n}).

  12. Power law field dependence of the 2D magnetoresistance in (TMTSF)2PF6

    International Nuclear Information System (INIS)

    Kriza, G.; Szeghy, G.; Kezsmarki, I.; Mihaly, G.

    1999-01-01

    The magnetoresistance of the quasi-one-dimensional organic conductor (TMTSF) 2 PF 6 is studied for currents flowing parallel to the best conducting a and second best conducting b directions in magnetic fields perpendicular to the a-b plane under a hydrostatic pressure of 0.8 GPa. As a function of the magnetic field, the magnetoresistance follows a power law ΔR/R = (B/B 0 ) 3/2 both in the a and b directions. The a-b plane conductivity anisotropy is field independent. The scaling field B 0 , characterizing the strength of the magnetoresistance, follows an exponential temperature dependence B 0 ∝exp(T/T 0 ) with a field-independent characteristic temperature T 0 = 10 K. (orig.)

  13. Domain wall magnetoresistance in nanowires: Dependence on geometrical factors and material parameters

    International Nuclear Information System (INIS)

    Allende, S.; Retamal, J.C.; Altbir, D.; D'Albuquerque e Castro, J.

    2014-01-01

    The magnetoresistance associated with the presence of domain walls in metallic nanowires is investigated as a function of geometrical parameters, corresponding to the wall thickness and the nanowire width, as well as of material parameters, such as the band filling and the exchange interaction. Transport across the structure is described within Landauer formalism. Both cases of saturated and non-saturated ferromagnets are considered, and in all of them the contributions from spin-flip and non-spin-flip are separately analyzed. It has been found that for certain range of parameters deviations in the normalized magnetoresistance as high as 20% may be achieved. In addition, it has been shown that the spin-flip process is dependent on the wall thickness. - Highlights: • We identify thickness regions within which transport across the wall is dominated by either spin-flip or non-spin-flip process. • We analyze the dependence of the magnetoresistance on both the material's band filling and strength of the exchange interaction. • We identify parameter ranges within which magnetoresistance ratios as high as 20% or even more might be achieved

  14. Domain wall magnetoresistance in nanowires: Dependence on geometrical factors and material parameters

    Energy Technology Data Exchange (ETDEWEB)

    Allende, S.; Retamal, J.C. [Departamento de Física, CEDENNA, Universidad de Santiago de Chile, USACH, Avenida Ecuador 3493, 917-0124 Santiago (Chile); Altbir, D., E-mail: dora.altbir@usach.cl [Departamento de Física, CEDENNA, Universidad de Santiago de Chile, USACH, Avenida Ecuador 3493, 917-0124 Santiago (Chile); D' Albuquerque e Castro, J. [Instituto de Física, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, Rio de Janeiro 21941-972 (Brazil)

    2014-04-15

    The magnetoresistance associated with the presence of domain walls in metallic nanowires is investigated as a function of geometrical parameters, corresponding to the wall thickness and the nanowire width, as well as of material parameters, such as the band filling and the exchange interaction. Transport across the structure is described within Landauer formalism. Both cases of saturated and non-saturated ferromagnets are considered, and in all of them the contributions from spin-flip and non-spin-flip are separately analyzed. It has been found that for certain range of parameters deviations in the normalized magnetoresistance as high as 20% may be achieved. In addition, it has been shown that the spin-flip process is dependent on the wall thickness. - Highlights: • We identify thickness regions within which transport across the wall is dominated by either spin-flip or non-spin-flip process. • We analyze the dependence of the magnetoresistance on both the material's band filling and strength of the exchange interaction. • We identify parameter ranges within which magnetoresistance ratios as high as 20% or even more might be achieved.

  15. Temperature dependence of magnetoresistance in neutron-irradiated and unirradiated high resistivity p-type silicon

    International Nuclear Information System (INIS)

    Yildirim, M.; Efeoglu, H.; Abay, B.; Yogurtcu, Y.K.

    1996-01-01

    The temperature dependence of the transverse magnetoresistance in irradiated and unirradiated p-type Si is studied in the range from 120 to 290 K. The magnetoresistance coefficients for the unirradiated left angle 001 right angle and left angle 1 anti 10 right angle samples increases with decreasing sample temperature in the range from 160 to 290 K, however, this behavior is reversed below 160 K. It is proposed that this reversal is due to the double injection effect. The magnetoresistance coefficient for the irradiated left angle 001 right angle sample increases with decreasing sample temperature in the range of 120 to 290 K and is greater than that for the unirradiated left angle 001 right angle sample. This result can be explained by increased scattering due to the increased number of defects produced by irradiation. On the other hand, the magnetoresistance coefficient for the unirradiated left angle 1 anti 10 right angle sample is found to be greater than that of the unirradiated left angle 001 right angle sample. (orig.)

  16. Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Pramanik, Tanmoy, E-mail: pramanik.tanmoy@utexas.edu; Roy, Anupam, E-mail: anupam@austin.utexas.edu; Dey, Rik, E-mail: rikdey@utexas.edu; Rai, Amritesh; Guchhait, Samaresh; Movva, Hema C.P.; Hsieh, Cheng-Chih; Banerjee, Sanjay K.

    2017-09-01

    Highlights: • Perpendicular magnetic anisotropy in epitaxial Cr{sub 2}Te{sub 3} has been investigated. • Presence of a relatively strong second order anisotropy contribution is observed. • Magnetization reversal is explained quantitatively using a 1D defect model. • Relative roles of nucleation and pinning in magnetization reversal are discussed. • Domain structures and switching process are visualized by micromagnetic simulation. - Abstract: We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular magnetic anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.

  17. Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites

    OpenAIRE

    Hoefener, C.; Philipp, J. B.; Klein, J.; Alff, L.; Marx, A.; Buechner, B.; Gross, R.

    2000-01-01

    We have performed a systematic analysis of the voltage and temperature dependence of the tunneling magnetoresistance (TMR) of grain boundaries (GB) in the manganites. We find a strong decrease of the TMR with increasing voltage and temperature. The decrease of the TMR with increasing voltage scales with an increase of the inelastic tunneling current due to multi-step inelastic tunneling via localized defect states in the tunneling barrier. This behavior can be described within a three-current...

  18. Angular momentum dependence of the distribution of shell model eigenenergies

    International Nuclear Information System (INIS)

    Yen, M.K.

    1974-01-01

    In the conventional shell model calculation the many-particle energy matrices are constructed and diagonalized for definite angular momentum and parity. However the resulting set of eigenvalues possess a near normal behavior and hence a simple statistical description is possible. Usually one needs only about four parameters to capture the average level densities if the size of the set is not too small. The parameters are essentially moments of the distribution. But the difficulty lies in the yet unsolved problem of calculating moments in the fixed angular momentum subspace. We have derived a formula to approximate the angular momentum projection dependence of any operator averaged in a shell model basis. This approximate formula which is a truncated series in Hermite polynomials has been proved very good numerically and justified analytically for large systems. Applying this formula to seven physical cases we have found that the fixed angular momentum projection energy centroid, width and higher central moments can be obtained accurately provided for even-even nuclei the even and odd angular momentum projections are treated separately. Using this information one can construct the energy distribution for fixed angular momentum projection assuming normal behavior. Then the fixed angular momentum level densities are deduced and spectra are extracted. Results are in reasonably good agreement with the exact values although not as good as those obtained using exact fixed angular momentum moments. (Diss. Abstr. Int., B)

  19. The angular momentum dependence of complex fragment emission

    International Nuclear Information System (INIS)

    Sobtka, L.G.; Sarantites, D.G.; Li, Z.

    1987-01-01

    Large fragment (A > 4) production at high angular momentum is studied via the reaction, 200 MeV 45 Sc + 65 Cu. Comparisons of the fragment yields from this reaction (high angular momentum) to those from 93 Nb + Be (low angular momentum) are used to verify the strong angular momentum dependence of large fragment production predicted by equilibrium models. Details of the coincident γ-ray distributions not only confirm a rigidly rotating intermediate but also indicate that the widths of the primary L-wave distributions decrease with increasing symmetry in the decay channel. These data are used to test the asymmetry and L-wave dependence of emission barriers calculated from a rotating, finite range corrected, liquid drop model. 21 refs., 10 figs

  20. Modeling of the angular dependence of plasma etching

    International Nuclear Information System (INIS)

    Guo Wei; Sawin, Herbert H.

    2009-01-01

    An understanding of the angular dependence of etching yield is essential to investigate the origins of sidewall roughness during plasma etching. In this article the angular dependence of polysilicon etching in Cl 2 plasma was modeled as a combination of individual angular-dependent etching yields for ion-initiated processes including physical sputtering, ion-induced etching, vacancy generation, and removal. The modeled etching yield exhibited a maximum at ∼60 degree sign off-normal ion angle at low flux ratio, indicative of physical sputtering. It transformed to the angular dependence of ion-induced etching with the increase in the neutral-to-ion flux ratio. Good agreement between the modeling and the experiments was achieved for various flux ratios and ion energies. The variation of etching yield in response to the ion angle was incorporated in the three-dimensional profile simulation and qualitative agreement was obtained. The surface composition was calculated and compared to x-ray photoelectron spectroscopy (XPS) analysis. The modeling indicated a Cl areal density of 3x10 15 atoms/cm 2 on the surface that is close to the value determined by the XPS analysis. The response of Cl fraction to ion energy and flux ratio was modeled and correlated with the etching yields. The complete mixing-layer kinetics model with the angular dependence effect will be used for quantitative surface roughening analysis using a profile simulator in future work.

  1. Magnetoresistive logic and biochip

    International Nuclear Information System (INIS)

    Brueckl, Hubert; Brzeska, Monika; Brinkmann, Dirk; Schotter, J.Joerg; Reiss, Guenter; Schepper, Willi; Kamp, P.-B.; Becker, Anke

    2004-01-01

    While some magnetoresistive devices based on giant magnetoresistance or spin-dependent tunneling are already commercialized, a new branch of development is evolving towards magnetoresistive logic with magnetic tunnel junctions. Furthermore, the new magnetoelectronic effects show promising properties in magnetoresistive biochips, which are capable of detecting even single molecules (e.g. DNA) by functionalized magnetic markers. The unclear limits of this approach are discussed with two model systems

  2. Strong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact device

    KAUST Repository

    Sun, Jian

    2012-02-21

    A two-contact extraordinary magnetoresistance (EMR) device has been fabricated and characterized at various temperatures under magnetic fields applied in different directions. Large performance variations across the temperature range have been found, which are due to the strong dependence of the EMR effect on the mobility. The device shows the highest sensitivity of 562ω/T at 75 K with the field applied perpendicularly. Due to the overlap between the semiconductor and the metal shunt, the device is also sensitive to planar fields but with a lower sensitivity of about 20 to 25% of the one to perpendicular fields. © 2012 The Japan Society of Applied Physics.

  3. Angular dependence of EEDF in ion-beam plasma

    International Nuclear Information System (INIS)

    Dudin, S.V.

    1995-01-01

    In a previous paper the results of measurements of electron energy distribution function (EEDF) in ion-beam plasma created by low energy broad ion beam had been presented regardless of the angular dependence of the electron distribution. The present work is specifically aimed towards elucidating the spatial structure of the EEDF in the ion-beam plasma. To solve this problem combination of the techniques of cylindrical probe, large plate probe (5 x 5 mm) and two-grid enegoanalyzer was used. Directional operation of the probes makes possible measurement of angular dependence of electron distribution function which is anisotropic in high energy region. To optimize the construction of the probe-analyzer, experiments with grids were performed, which had different size, mesh, and transparency, under different potentials, and with different distances between grids. Numerical simulation of the analyzer was performed too. It is derived that optimal design for measurements in isotropic plasma is the most plate, thin two-grid probe with maximum angular covering. Investigation of angular dependence of EEDF has shown that the distribution of trapped electrons is completely isotropic, whereas in the energy range of var-epsilon > e var-phi pl (var-phi pl - plasma potential) a strong anisotropy of the EEDF is observed

  4. Angular dependence of spin-orbit spin-transfer torques

    KAUST Repository

    Lee, Ki-Seung

    2015-04-06

    In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

  5. Angular dependence of spin-orbit spin-transfer torques

    KAUST Repository

    Lee, Ki-Seung; Go, Dongwook; Manchon, Aurelien; Haney, Paul M.; Stiles, M. D.; Lee, Hyun-Woo; Lee, Kyung-Jin

    2015-01-01

    In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

  6. Angular dependence of the parallel plate ionization chambers of Ipen

    International Nuclear Information System (INIS)

    Albuquerque, M. da P.P.; Caldas, L.

    1989-08-01

    The ionization chambers with parallel plates designed and constructed at IPEN for the dosimetry of soft X-radiation fields were studied in relation to thein angular dependence between O and +- 90 0 . The objective of this study is to verify the chambers response variation for small positioning errors during the field dosimetry used in Radiotherapy. The results were compared with those of commercial parallel plate ionization chambers used as secondary and testiary standards. (author) [pt

  7. Angle-dependent magnetoresistance and quantum oscillations in high-mobility semimetal LuPtBi

    KAUST Repository

    Xu, Guizhou; Hou, Zhipeng; Wang, Yue; Zhang, Xiaoming; Zhang, Hongwei; Liu, Enke; Xi, X; Xu, Feng; Wu, Guangheng; Zhang, Xixiang; Wang, Wenhong

    2017-01-01

    The recent discovery of ultrahigh mobility and large positive magnetoresistance in topologically non-trivial Half-Heusler semimetal LuPtBi provides a unique playground for studying exotic physics and significant perspective for device applications. As an fcc-structured electron-hole-compensated semimetal, LuPtBi theoretically exhibits six symmetrically arranged anisotropic electron Fermi pockets and two nearly-spherical hole pockets, offering the opportunity to explore the physics of Fermi surface with a simple angle-related magnetotransport properties. In this work, through the angle-dependent transverse magnetoresistance measurements, in combination with high-field SdH quantum oscillations, we achieved to map out a Fermi surface with six anisotropic pockets in the high-temperature and low-field regime, and furthermore, identify a possible magnetic field driven Fermi surface change at lower temperatures. Reasons account for the Fermi surface change in LuPtBi are discussed in terms of the field-induced electron evacuation due to Landau quantization.

  8. Angle-dependent magnetoresistance and quantum oscillations in high-mobility semimetal LuPtBi

    KAUST Repository

    Xu, Guizhou

    2017-03-14

    The recent discovery of ultrahigh mobility and large positive magnetoresistance in topologically non-trivial Half-Heusler semimetal LuPtBi provides a unique playground for studying exotic physics and significant perspective for device applications. As an fcc-structured electron-hole-compensated semimetal, LuPtBi theoretically exhibits six symmetrically arranged anisotropic electron Fermi pockets and two nearly-spherical hole pockets, offering the opportunity to explore the physics of Fermi surface with a simple angle-related magnetotransport properties. In this work, through the angle-dependent transverse magnetoresistance measurements, in combination with high-field SdH quantum oscillations, we achieved to map out a Fermi surface with six anisotropic pockets in the high-temperature and low-field regime, and furthermore, identify a possible magnetic field driven Fermi surface change at lower temperatures. Reasons account for the Fermi surface change in LuPtBi are discussed in terms of the field-induced electron evacuation due to Landau quantization.

  9. Angular dependence of the nanoDot OSL dosimeter

    International Nuclear Information System (INIS)

    Kerns, James R.; Kry, Stephen F.; Sahoo, Narayan; Followill, David S.; Ibbott, Geoffrey S.

    2011-01-01

    Purpose: Optically stimulated luminescent detectors (OSLDs) are quickly gaining popularity as passive dosimeters, with applications in medicine for linac output calibration verification, brachytherapy source verification, treatment plan quality assurance, and clinical dose measurements. With such wide applications, these dosimeters must be characterized for numerous factors affecting their response. The most abundant commercial OSLD is the InLight/OSL system from Landauer, Inc. The purpose of this study was to examine the angular dependence of the nanoDot dosimeter, which is part of the InLight system. Methods: Relative dosimeter response data were taken at several angles in 6 and 18 MV photon beams, as well as a clinical proton beam. These measurements were done within a phantom at a depth beyond the build-up region. To verify the observed angular dependence, additional measurements were conducted as well as Monte Carlo simulations in MCNPX. Results: When irradiated with the incident photon beams parallel to the plane of the dosimeter, the nanoDot response was 4% lower at 6 MV and 3% lower at 18 MV than the response when irradiated with the incident beam normal to the plane of the dosimeter. Monte Carlo simulations at 6 MV showed similar results to the experimental values. Examination of the results in Monte Carlo suggests the cause as partial volume irradiation. In a clinical proton beam, no angular dependence was found. Conclusions: A nontrivial angular response of this OSLD was observed in photon beams. This factor may need to be accounted for when evaluating doses from photon beams incident from a variety of directions.

  10. Nuclear level density parameter 's dependence on angular momentum

    International Nuclear Information System (INIS)

    Aggarwal, Mamta; Kailas, S.

    2009-01-01

    Nuclear level densities represent a very important ingredient in the statistical Model calculations of nuclear reaction cross sections and help to understand the microscopic features of the excited nuclei. Most of the earlier experimental nuclear level density measurements are confined to low excitation energy and low spin region. A recent experimental investigation of nuclear level densities in high excitation energy and angular momentum domain with some interesting results on inverse level density parameter's dependence on angular momentum in the region around Z=50 has motivated us to study and analyse these experimental results in a microscopic theoretical framework. In the experiment, heavy ion fusion reactions are used to populate the excited and rotating nuclei and measured the α particle evaporation spectra in coincidence with ray multiplicity. Residual nuclei are in the range of Z R 48-55 with excitation energy range 30 to 40 MeV and angular momentum in 10 to 25. The inverse level density parameter K is found to be in the range of 9.0 - 10.5 with some exceptions

  11. Angular momentum dependence of the nuclear level density parameter

    International Nuclear Information System (INIS)

    Aggarwal, Mamta; Kailas, S.

    2010-01-01

    Dependence of nuclear level density parameter on the angular momentum and temperature is investigated in a theoretical framework using the statistical theory of hot rotating nuclei. The structural effects are incorporated by including shell correction, shape, and deformation. The nuclei around Z≅50 with an excitation energy range of 30 to 40 MeV are considered. The calculations are in good agreement with the experimentally deduced inverse level density parameter values especially for 109 In, 113 Sb, 122 Te, 123 I, and 127 Cs nuclei.

  12. Experimental study of angular dependence in double photon Compton scattering

    International Nuclear Information System (INIS)

    Sandhu, B.S.; Dewan, R.; Saddi, M.B.; Singh, B.; Ghumman, B.S.

    2000-01-01

    The collision differential cross-section and energy of one of the final photons for double photon Compton scattering have been measured as a function of scattering angle θ 1 . The incident photon energy is 0.662 MeV and thin aluminium foils are used as a scatterer. The two simultaneously emitted photons in this higher order process are detected in coincidence using two NaI(Tl) scintillation spectrometers and 30 ns timing electronics. The measured values for energy and collision differential cross-section agree with theory within experimental estimated error. The present data provide information of angular dependence in this higher order process

  13. Signature of the magnetic transitions in Y0.2Pr0.8Ba2Cu3O7-δ in high field angular magnetoresistivity

    International Nuclear Information System (INIS)

    Sandu, V; Zhang, C; Almasan, C C; Taylor, B J; Maple, M B

    2006-01-01

    In-plane (ab) and out-of-plane (c-axis) magnetoresistivity display different symmetry crossovers and/or transitions in 14 T magnetic field applied parallel to the CuO 2 planes. The in-plane magnetoresistivity crosses over from four-fold symmetry below 6 K to two-fold symmetry at higher temperatures, which becomes dominant at temperatures higher than 40 K. The out-of-plane magnetoresistivity changes at 17 K from four fold symmetry to ordinary sin 2 θ at higher temperatures. The behaviour of the c-axis magnetoresistivity can be ascribed to the antiferromagnetic ordering of the Pr spins whereas the symmetry change of the in-plane magnetoresistivity at 6 K might be attributed to commensurate to incommensurate crossovers of the spin subsystems. The antiferromagnetic order of the Cu(2) sublattice seems to have only a week effect on the magnetoresistivity

  14. Frame dependence of spin-one angular conditions in light front dynamics

    International Nuclear Information System (INIS)

    Bakker, Bernard L. G.; Ji Chuengryong

    2002-01-01

    We elaborate the frame dependence of the angular conditions for spin-1 form factors. An extra angular condition is found in addition to the usual angular condition relating the four helicity amplitudes. Investigating the frame dependence of angular conditions, we find that the extra angular condition is in general as complicated as the usual one, although it becomes very simple in the q + =0 frame involving only two helicity amplitudes. It is confirmed that the angular conditions are identical in frames that are connected by kinematical transformations. The high-Q 2 behavior of the physical form factors and the limiting behavior in special reference frames are also discussed

  15. Angular dependence of the coercivity in arrays of ferromagnetic nanowires

    International Nuclear Information System (INIS)

    Holanda, J.; Silva, D.B.O.; Padrón-Hernández, E.

    2015-01-01

    We present a new magnetic model for polycrystalline nanowires arrays in porous anodic aluminum oxide. The principal consideration here is the crystalline structure and the morphology of the wires and them the dipolar interactions between the crystals into the wire. Other aspect here is the direct calculation of the dipolar energy for the interaction of one wire with the others in the array. The free energy density was formulated for polycrystalline nanowires arrays in order to determinate the anisotropy effective field. It was using the microstructure study by scanning and transmission electron microscopy for the estimation of the real structure of the wires. After the structural analysis we used the angular dependences for the coercivity field and for the remnant magnetization to determine the properties of the wires. All analysis were made by the theory treatment proposed by Stoner and Wohlfarth

  16. Temperature and angular dependence of substrate response in SEGR

    International Nuclear Information System (INIS)

    Mouret, I.; Allenspach, M.; Schrimpf, R.D.; Brews, J.R.; Galloway, K.F.

    1994-01-01

    This work examines the role of the substrate response in determining the temperature and angular dependence of Single-Event Gate Rupture (SEGR). Experimental data indicate that the likelihood of SEGR increases when the temperature of the device is increased or when the incident angle is made closer to normal. In this work, simulations are used to explore this influence of high temperature on SEGR and to support physical explanations for this effect. The reduced hole mobility at high temperature causes the hole concentration at the oxide-silicon interface to be greater, increasing the transient oxide field near the strike position. In addition, numerical calculations show that the transient oxide field decreases as the ion's angle of incidence is changed from normal. This decreased field suggests a lowered likelihood for SEGR, in agreement with the experimental trend

  17. Angular dependence of the coercivity in arrays of ferromagnetic nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Holanda, J. [Departamento de Física, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil); Silva, D.B.O. [Pós-Graduação em Ciência de Materiais, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil); Padrón-Hernández, E., E-mail: padron@df.ufpe.br [Departamento de Física, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil); Pós-Graduação em Ciência de Materiais, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil)

    2015-03-15

    We present a new magnetic model for polycrystalline nanowires arrays in porous anodic aluminum oxide. The principal consideration here is the crystalline structure and the morphology of the wires and them the dipolar interactions between the crystals into the wire. Other aspect here is the direct calculation of the dipolar energy for the interaction of one wire with the others in the array. The free energy density was formulated for polycrystalline nanowires arrays in order to determinate the anisotropy effective field. It was using the microstructure study by scanning and transmission electron microscopy for the estimation of the real structure of the wires. After the structural analysis we used the angular dependences for the coercivity field and for the remnant magnetization to determine the properties of the wires. All analysis were made by the theory treatment proposed by Stoner and Wohlfarth.

  18. Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films.

    Science.gov (United States)

    Alejandro, G; Steren, L B; Pastoriza, H; Vega, D; Granada, M; Sánchez, J C Rojas; Sirena, M; Alascio, B

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La(0.75)Sr(0.25)MnO(3) films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  19. Magnetoresistance effect in (La, Sr)MnO{sub 3} bicrystalline films

    Energy Technology Data Exchange (ETDEWEB)

    Alejandro, G; Pastoriza, H; Granada, M; Rojas Sanchez, J C; Sirena, M; Alascio, B [Centro Atomico Bariloche (CNEA), Av. Bustillo 9500, 8400 San Carlos de Bariloche, Pcia. de Rio Negro (Argentina); Steren, L B; Vega, D, E-mail: galejand@cab.cnea.gov.a [Centro Atomico Constituyentes (CNEA), 1650 San MartIn, Pcia. de Buenos Aires (Argentina)

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La{sub 0.75}Sr{sub 0.25}MnO{sub 3} films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  20. Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films

    International Nuclear Information System (INIS)

    Alejandro, G; Pastoriza, H; Granada, M; Rojas Sanchez, J C; Sirena, M; Alascio, B; Steren, L B; Vega, D

    2010-01-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La 0.75 Sr 0.25 MnO 3 films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  1. Temperature Dependent Magnetoresistance of CeCu2Si2 up to 60 T [Proposal: P14728

    Energy Technology Data Exchange (ETDEWEB)

    Stritzinger, Laurel Elaine Winter [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Lai, Y. [Florida State Univ., Tallahassee, FL (United States); Mcdonald, Ross David [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Baumbach, R. E. [Florida State Univ., Tallahassee, FL (United States)

    2017-03-23

    We recently investigated the chemical substitution series CeCu2Si2-xPx, for x = 0, 0.01, and 0.14, using a contactless tunnel diode oscillator technique. These measurements revealed previously unreported Shubnikov-de Haas oscillations above 45 T with an unusual temperature dependence that could potentially be explained by a high magnetic field transition. To investigate this possible transition, magnetoresistance measurements were desired. However, initial magnetoresistance measurements on CeCu2Si2 showed poor signal-to-noise due to the small value of the sample's resistivity. To overcome this obstacle, we performed micro-structuring of a single crystal specimen to increase the sample's resistance.

  2. The dependence of the period on the angular amplitude of a simple ...

    African Journals Online (AJOL)

    The timing of the oscillation was done as the bob passed through its rest position. The time for 50 oscillations was recorded for different lengths and angular amplitudes. It was observed that the period depends on length and angular amplitude of the pendulum. The variation of the period with the angular amplitude is not a ...

  3. Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

    Science.gov (United States)

    Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.

    2018-01-01

    Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

  4. Importance of frequency dependent magnetoresistance measurements in analysing the intrinsicality of magnetodielectric effect: A case study

    Science.gov (United States)

    Rai, Hari Mohan; Saxena, Shailendra K.; Mishra, Vikash; Kumar, Rajesh; Sagdeo, P. R.

    2017-08-01

    Magnetodielectric (MD) materials have attracted considerable attention due to their intriguing physics and potential future applications. However, the intrinsicality of the MD effect is always a major concern in such materials as the MD effect may arise also due to the MR (magnetoresistance) effect. In the present case study, we report an experimental approach to analyse and separate the intrinsic and MR dominated contributions of the MD phenomenon. For this purpose, polycrystalline samples of LaGa1-xAxO3 (A = Mn/Fe) have been prepared by solid state reaction method. The purity of their structural phase (orthorhombic) has been validated by refining the X-ray diffraction data. The RTMD (room temperature MD) response has been recorded over a frequency range of 20 Hz to 10 MHz. In order to analyse the intrinsicality of the MD effect, FDMR (frequency dependent MR) by means of IS (impedance spectroscopy) and dc MR measurements in four probe geometry have been carried out at RT. A significant RTMD effect has been observed in selected Mn/Fe doped LaGaO3 (LGO) compositions. The mechanism of MR free/intrinsic MD effect, observed in Mn/Fe doped LGO, has been understood speculatively in terms of modified cell volume associated with the reorientation/retransformation of spin-coupled Mn/Fe orbitals due to the application of magnetic field. The present analysis suggests that in order to justify the intrinsic/resistive origin of the MD phenomenon, FDMR measurements are more useful than measuring only dc MR or analysing the trends of magnetic field dependent change in the dielectric constant and tanδ. On the basis of the present case study, we propose that IS (FDMR) alone can be used as an effective experimental tool to detect and analyse the resistive and intrinsic parts contributing to the MD phenomenon.

  5. Negative magnetoresistance of pitch-based carbon fibers Temperature and pressure dependence

    Science.gov (United States)

    Hambourger, P. D.

    1986-01-01

    The negative transverse magnetoresistance of high-modulus pitch-based carbon fibers has been measured over the temperature range 1.3-4.2 K at ambient pressure and at 4.2 K under hydrostatic pressure up to 16 kbar. At low fields (less than 0.5 torr) the magnitude of the magnetoresistance increases markedly as the temperature is lowered from 4.2 K to 1.3 K, in disagreement with Bright's theoretical model, and decreases with pressure at the rate -0.6 percent/kbar.

  6. Temperature-Dependent Three-Dimensional Anisotropy of the Magnetoresistance in WTe_{2}.

    Science.gov (United States)

    Thoutam, L R; Wang, Y L; Xiao, Z L; Das, S; Luican-Mayer, A; Divan, R; Crabtree, G W; Kwok, W K

    2015-07-24

    Extremely large magnetoresistance (XMR) was recently discovered in WTe_{2}, triggering extensive research on this material regarding the XMR origin. Since WTe_{2} is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe_{2}: (1) WTe_{2} is electronically 3D with a mass anisotropy as low as 2, as revealed by the 3D scaling behavior of the resistance R(H,θ)=R(ϵ_{θ}H) with ϵ_{θ}=(cos^{2}θ+γ^{-2}sin^{2}θ)^{1/2}, θ being the magnetic field angle with respect to the c axis of the crystal and γ being the mass anisotropy and (2) the mass anisotropy γ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe_{2}, including the origin of the remarkable "turn-on" behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition.

  7. Anomalous magnetoresistance in amorphous metals

    International Nuclear Information System (INIS)

    Kuz'menko, V.M.; Vladychkin, A.N.; Mel'nikov, V.I.; Sudovtsev, A.I.

    1984-01-01

    The magnetoresistance of amorphous Bi, Ca, V and Yb films is investigated in fields up to 4 T at low temperatures. For all metals the magnetoresistance is positive, sharply decreases with growth of temperature and depends anomalously on the magnetic field strength. For amorphous superconductors the results agree satisfactorily with the theory of anomalous magnetoresistance in which allowance is made for scattering of electrons by the superconducting fluctuations

  8. Angular dependent transport of auroral electrons in the upper atmosphere

    International Nuclear Information System (INIS)

    Lummerzheim, D.; Rees, M.H.

    1989-01-01

    The transport of auroral electrons through the upper atmosphere is analyzed. The transport equation is solved using a discrete ordinate method including elastic and inelastic scattering of electrons resulting in changes of pitch angle, and degradation in energy as the electrons penetrate into the atmosphere. The transport equation is solved numerically for the electron intensity as a function of altitude, pitch angle, and energy. In situ measurements of the pitch angle and energy distribution of precipitating electrons over an auroral arc provide boundary conditions for the calculation. The electron spectra from various locations over the aurora present a variety of anisotropic pitch angle distributions and energy spectra. Good agreement is found between the observed backscattered electron energy spectra and model predictions. Differences occur at low energies (below 500 eV) in the structure of the pitch angle distribution. Model calculations were carried out with various different phase functions for elastic and inelastic collisions to attempt changing the angular scattering, but the observed pitch angle distributions remain unexplained. We suggest that mechanisms other than collisional scattering influence the angular distribution of auroral electrons at or below 300 km altitude in the low energy domain. (author)

  9. Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices

    Science.gov (United States)

    Mani, R. G.

    2013-01-01

    Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insights into the physical phenomena involved in the associated electronic transport. This study examines a “bell-shape” negative GMR that grows in magnitude with decreasing temperatures in mm-wide devices fabricated from the high-mobility GaAs/AlGaAs 2-Dimensional Electron System (2DES). Experiments show that the span of this magnetoresistance on the magnetic-field-axis increases with decreasing device width, W, while there is no concurrent Hall resistance, Rxy, correction. A multi-conduction model, including negative diagonal-conductivity, and non-vanishing off-diagonal conductivity, reproduces experimental observations. The results suggest that a size effect in the mm-wide 2DES with mm-scale electron mean-free-paths is responsible for the observed “non-ohmic” size-dependent negative GMR. PMID:24067264

  10. Colossal magnetoresistance

    International Nuclear Information System (INIS)

    Fontcuberta, J.

    1999-01-01

    In 1986 Alex Mueller and Georg Bednorz of IBM Zurich discovered high-temperature superconductivity in copper-based oxides. This finding, which was rewarded with the Nobel Prize for Physics in the following year, triggered intense research into the properties of the transition metal oxides. Since then scientists have questioned the very nature of the metallic state in these materials. A few years after the initial discovery, in 1993, more excitement greeted reports that certain manganese oxides showed a huge change in electrical resistivity when a magnetic field was applied. This effect is generally known as magnetoresistance, but the resistivity change observed in these oxides was so large that it could not be compared with any other forms of magnetoresistance. The effect observed in these materials the manganese perovskites was therefore dubbed ''colossal'' magnetoresistance to distinguish it from the giant magnetoresistance observed in magnetic multilayers. In this article the author explains why magnetoresistance is an expanding field of physics research. (UK)

  11. Determining misorientation of graphite grains from the angular dependence of X-ray emission spectra

    International Nuclear Information System (INIS)

    Belavin, V. V.; Okotrub, A. V.; Bulusheva, L. G.; Kotosonov, A. S.; Vyalykh, D. V.; Molodtsov, S. L.

    2006-01-01

    Angular-resolved X-ray absorption spectra were measured for pyrolytic graphite samples of various quality. A new approach to determining the misorientation of graphite grains in polycrystalline samples is proposed, which is based on calculations of the angular dependence of the relative intensity of a peak corresponding to the π* state for a normal distribution of grains. The experimental values are used to construct theoretical angular dependences using partial densities of the π* and σ* states determined from the nonempirical calculations for graphite

  12. Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling.

    Science.gov (United States)

    Vélez, Saül; Golovach, Vitaly N; Bedoya-Pinto, Amilcar; Isasa, Miren; Sagasta, Edurne; Abadia, Mikel; Rogero, Celia; Hueso, Luis E; Bergeret, F Sebastian; Casanova, Fèlix

    2016-01-08

    We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev. Lett. 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt/Y(3)Fe(5)O(12) bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling.

  13. Study of dependence upon the magnetic field and transport current of the magnetoresistive effect in YBCO-based bulk composites

    International Nuclear Information System (INIS)

    Balaev, D A; Prus, A G; Shaykhutdinov, K A; Gokhfeld, D M; Petrov, M I

    2007-01-01

    The magnetoresistive properties of bulk YBCO + CuO and YBCO+BaPb 0.75 Sn 0.25 O 3 composites for different orientations of external magnetic field H and macroscopic transport current j have been measured. These composites exhibit large magnetoresistance in weak magnetic fields ( 2 θ. This fact suggests that the flux flow in the intergrain boundaries is responsible for the large magnetoresistive effect observed in the composites

  14. Angular dependence of Auger signals from a GaAs (111) surface

    International Nuclear Information System (INIS)

    Barnard, W.O.

    1984-03-01

    This dissertation is concerned with the angular dependence of the L 3 M 4 M 4 1067 eV Ga and L 3 M 4 M 4 1228 eV As Auger electron signals from a (111) GaAs surface, using a system which is equipped with a cylindrical mirror analyser. Following a detailed discussion of the Auger process, a review is given of angular effects in the emission excitation and detection of Auger signals. Present theories are discussed and an empirical theory is developed to test the experimental results obtained in this study. The experimental procedures and equipment used are presented. It was found that the Auger signals show a strong variation with the angle of rotation about the normal of a GaAs surface. Furthermore, the nature of the angular spectra of the Ga and As signals are interchanged when the electron beam incident surface is changed from (111) to (111). The main features of the angular variation of the quasi-elastic backscattered signal is reflected in the corresponding Ga and As Auger angular spectra. The angular dependence of the quasi-elastic backscattered signal can be explained semi-quantitatively in terms of the empirical theory. Theoretical arguments are presented which suggest that the Auger signals should show an angular dependence similar to the quasi-elastic backscattered signal. Evidence was found that geometric screening-off of underlying atoms by surface and near surface atoms influence the Auger yield

  15. Temperature-dependent anisotropic magnetoresistance inversion behaviors in Fe{sub 3}O{sub 4} films

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Kap Soo [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Hong, Jin Pyo, E-mail: jphong@hanyang.ac.kr [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2017-02-01

    We address the abnormal anisotropic magnetoresistance (AMR) reversal feature of half-metallic polycrystalline Fe{sub 3}O{sub 4} films occurring at a specific temperature. Experimental results revealed a positive to negative MR transition in the Fe{sub 3}O{sub 4} films at 264 K, which reflect the influence of additional domain wall scattering. These features was described by a correlation between domain wall resistance and inversion behavior of AMR with additional domain wall scattering factors. We further describe a possible model based on systematic structural and electrical measurements that employs a temperature-dependent domain wall width and spin diffusion length of the conducting electrons. This model allows for spin-flipping scattering of spin polarized electrons inside a proper domain width.

  16. Temperature dependence of the resistivity and tunneling magnetoresistance of sputtered FeHf(Si)O cermet films

    NARCIS (Netherlands)

    Strijkers, G.J.; Swagten, H.J.M.; Rulkens, B.; Bitter, R.H.J.N.; Jonge, de W.J.M.; Bloemen, P.J.H.; Schep, K.M.

    1998-01-01

    We have studied the tunneling resistivity and magnetoresistance of reactive sputter deposited FeHfO and FeHfSiO thin granular films. Maximum magnetoresistance ratios at room temperature of 2% and 3.2% were observed for films with compositions of Fe47Hf10O43 and Fe40Hf6Si6O48, respectively. The

  17. High magnetic field magnetoresistance anomalies in the charge density wave state of the quasi-two dimensional bronze KMo6O{17}

    Science.gov (United States)

    Guyot, H.; Dumas, J.; Marcus, J.; Schlenker, C.; Vignolles, D.

    2005-12-01

    We report high magnetic field magnetoresistance measurements performed in pulsed fields up to 55 T on the quasi-two dimensional charge density wave conductor KMo{6}O{17}. Magnetoresistance curves show several anomalies below 28 T. First order transitions to smaller gap states take place at low temperature above 30 T. A phase diagram T(B) has been obtained. The angular dependence of the anomalies is reported.

  18. Dependence on film thickness of grain boundary low-field magnetoresistance in thin films of La0.7Ca0.3MnO3

    International Nuclear Information System (INIS)

    Todd, N. K.; Mathur, N. D.; Blamire, M. G.

    2001-01-01

    The magnetoresistance of grain boundaries in the perovskite manganites is being studied, both in polycrystalline materials, and thin films grown on bicrystal substrates, because of interest in low-field applications. In this article we show that epitaxial films grown on SrTiO 3 bicrystal substrates of 45 degree misorientation show magnetoresistance behavior which is strongly dependent on the thickness of the film. Thin films, e.g., 40 nm, can show a large low-field magnetoresistance at low temperatures, with very sharp switching between distinct high and low resistance states for fields applied in plane and parallel to the boundary. Thicker films show a more complex behavior of resistance as a function of field, and the dependence on the angle between the applied field and the grain boundary is altered. These changes in magnetoresistance behavior are linked to the variation in morphology of the films. Thin films are coherently strained, due to the mismatch with the substrate, and very smooth. Thicker films relax, with the formation of defects, and hence different micromagnetic behavior. [copyright] 2001 American Institute of Physics

  19. Squeezing a wave packet with an angular-dependent mass

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Alexandre G M [Departamento de Ciencias Exatas, Universidade Federal Fluminense, Av. dos Trabalhadores 420, Volta Redonda RJ, CEP 27255-125 (Brazil)], E-mail: agmschmidt@gmail.com, E-mail: agmschmidt@pq.cnpq.br

    2009-06-19

    We present a new effect of position-dependent mass (PDM) systems: the possibility of creating squeezed wave packets at the partial revival times. We solve exactly the PDM Schroedinger equation for the two-dimensional quantum rotor with two effective masses {mu}({theta}), both free and interacting with a uniform electric field, and present their energy eigenvalues and eigenfunctions in terms of Mathieu functions. For the first one, in order to squeeze the wave packet it is necessary to apply an electric field; for the second one such an effect can be achieved without the field.

  20. Squeezing a wave packet with an angular-dependent mass

    International Nuclear Information System (INIS)

    Schmidt, Alexandre G M

    2009-01-01

    We present a new effect of position-dependent mass (PDM) systems: the possibility of creating squeezed wave packets at the partial revival times. We solve exactly the PDM Schroedinger equation for the two-dimensional quantum rotor with two effective masses μ(θ), both free and interacting with a uniform electric field, and present their energy eigenvalues and eigenfunctions in terms of Mathieu functions. For the first one, in order to squeeze the wave packet it is necessary to apply an electric field; for the second one such an effect can be achieved without the field

  1. Angular momentum and incident-energy dependence of nucleus-nucleus interaction

    International Nuclear Information System (INIS)

    Yamaguchi, S.

    1991-01-01

    The purpose of this paper is to understand intuitively the origin of the angular momentum and incident-energy dependence of the nucleus-nucleus interaction on the basis of the totally- antisymmetrized many-body theory. With the aim of understanding the structure of the nucleus-nucleus interaction, we show first that the nucleus-nucleus interaction can be written by the use of the density-distribution function and the phase-space distribution function instead of using the many-body wave function itself. And we show that the structure change of the density-distribution function with the increase of the angular momentum causes the angular momentum dependence of the nucleus-nucleus interaction and that the incident-energy dependence of the nucleus-nucleus interaction originates from the structure change of the phase-space distribution function

  2. A study of angular dependence in the ablation rate of polymers by nanosecond pulses

    Science.gov (United States)

    Pedder, James E. A.; Holmes, Andrew S.

    2006-02-01

    Measurements of ablation rate have traditionally been carried out only at normal incidence. However, in real-world applications ablation is often carried out at oblique angles, and it is useful to have prior knowledge of the ablation rate in this case. Detailed information about the angular dependence is also important for the development of ablation simulation tools, and can provide additional insight into the ablation mechanism. Previously we have reported on the angular dependence of direct-write ablation at 266 nm wavelength in solgel and polymer materials. In this paper we present a systematic study of angular dependence for excimer laser ablation of two polymer materials of interest for microfabrication: polycarbonate and SU8 photoresist. The results are used to improve simulation models to aid in mask design.

  3. Bias voltage dependence of tunneling magnetoresistance in granular C60–Co films with current-perpendicular-to-plane geometry

    International Nuclear Information System (INIS)

    Sakai, Seiji; Mitani, Seiji; Matsumoto, Yoshihiro; Entani, Shiro; Avramov, Pavel; Ohtomo, Manabu; Naramoto, Hiroshi; Takanashi, Koki

    2012-01-01

    Voltage-dependence of the tunneling magnetoresistance effect in the granular C 60 –Co films has been investigated for the samples with the current-perpendicular-to-plane geometry. The transport measurements under this geometry demonstrate that the granular C 60 –Co films show an unusual exponential bias voltage dependence of the magnetoresistance ratio down to zero voltage. Small characteristic energies of less than 10's meV are derived from the temperature dependences of the characteristic voltage in the exponential relationship. Considering the magnitudes of the voltage drop between Co nanoparticles and also the effect of cotunneling on the energy values, the characteristic energies for the voltage-induced degradation of the spin polarization are found to show a satisfactory agreement with that for the thermally-induced one. It can be reasonably expected that the onset of magnetic disorder to the localized d-electron spins at the interface region of the C 60 -based matrix (C 60 –Co compound) with Co nanoparticles leading to the unusual voltage and temperature dependence of the magnetoresistance ratio and the spin polarization at low temperatures. - Highlights: ► Unusual voltage dependence of the TMR effect in granular C 60 –Co films is studied. ► Linear temperature-characteristic voltage dependence in the MR–V relationship. ► Spin-flip scattering by the exchange-coupled d-electron spins at the interface.

  4. Angular distribution of scission neutrons studied with time-dependent Schrödinger equation

    Science.gov (United States)

    Wada, Takahiro; Asano, Tomomasa; Carjan, Nicolae

    2018-03-01

    We investigate the angular distribution of scission neutrons taking account of the effects of fission fragments. The time evolution of the wave function of the scission neutron is obtained by integrating the time-dependent Schrodinger equation numerically. The effects of the fission fragments are taken into account by means of the optical potentials. The angular distribution is strongly modified by the presence of the fragments. In the case of asymmetric fission, it is found that the heavy fragment has stronger effects. Dependence on the initial distribution and on the properties of fission fragments is discussed. We also discuss on the treatment of the boundary to avoid artificial reflections

  5. Transverse thermal magnetoresistance of potassium

    International Nuclear Information System (INIS)

    Newrock, R.S.; Maxfield, B.W.

    1976-01-01

    Results are presented of extensive thermal magnetoresistance measurements on single-crystal and polycrystalline specimens of potassium having residual resistance ratios (RRR) ranging from 1100 to 5300. Measurements were made between 2 and 9 0 K for magnetic fields up to 1.8 T. The observed thermal magnetoresistance cannot be understood on the basis of either semiclassical theories or from the electrical magnetoresistance and the Wiedemann-Franz law. A number of relationships are observed between the thermal and electrical magnetoresistances, many of which are not immediately obvious when comparing direct experimental observations. The thermal magnetoresistance W(T,H) is given reasonably well by W(T,H)T = W(T,0)T + AH + BH 2 , where both A and B are temperature-dependent coefficients. Results show that A = A 0 + A 1 T 3 , while B(T) cannot be expressed as any simple power law. A 0 is dependent on the RRR, while A 1 is independent of the RRR. Two relationships are found between corresponding coefficients in the electrical and thermal magnetoresistance: (i) the Wiedmann--Franz law relates A 0 to the Kohler slope of the electrical magnetoresistance and (ii) the temperature-dependent portions of the electrical and thermal Kohler slopes are both proportional to the electron--phonon scattering contribution to the corresponding zero-field resistance. The latter provides evidence that inelastic scattering is very important in determining the temperature-dependent linear magnetoresistances. Part, but by no means all, of the quadratic thermal resistance is accounted for by lattice thermal conduction. It is concluded that at least a portion of the anomalous electrical and thermal magnetoresistances is due to intrinsic causes and not inhomogeneities or other macroscopic defects

  6. Rotating Hele-Shaw cell with a time-dependent angular velocity

    Science.gov (United States)

    Anjos, Pedro H. A.; Alvarez, Victor M. M.; Dias, Eduardo O.; Miranda, José A.

    2017-12-01

    Despite the large number of existing studies of viscous flows in rotating Hele-Shaw cells, most investigations analyze rotational motion with a constant angular velocity, under vanishing Reynolds number conditions in which inertial effects can be neglected. In this work, we examine the linear and weakly nonlinear dynamics of the interface between two immiscible fluids in a rotating Hele-Shaw cell, considering the action of a time-dependent angular velocity, and taking into account the contribution of inertia. By using a generalized Darcy's law, we derive a second-order mode-coupling equation which describes the time evolution of the interfacial perturbation amplitudes. For arbitrary values of viscosity and density ratios, and for a range of values of a rotational Reynolds number, we investigate how the time-dependent angular velocity and inertia affect the important finger competition events that traditionally arise in rotating Hele-Shaw flows.

  7. Angular dependence of response of dosimeters exposed to an extended radioactive source

    International Nuclear Information System (INIS)

    Manai, K.; Trabelsi, A.; Madouri, F.

    2014-01-01

    This study was carried out to investigate the exposure angular dependence of dosimeters response when exposed to the extended gamma source of an irradiation facility. Using analytical and Monte Carlo analysis, we show that dosimeters response has no angular dependence as claimed by a previous study. The dose rate formula we derived takes into account the path length of the photons in the dosimeter. Experimental data have been used to validate our analytical and Monte Carlo methods. Furthermore, the effects on the dosimeters responses in relation to their sizes response of their size and geometry and orientation have been investigated and, within statistical errors, no angular dependence was found. - Highlights: • We investigate the exposer angle dependence of dosimeter response to a gamma source. • Analytical and Monte Carlo analyses show no angular dependence as claimed by others. • We derive the dose rate formulae taking into account the path length of photons. • Analytical and Monte Carlo models have been validated using experimental data

  8. Effects of angular dependence of surface diffuseness in deformed nuclei on Coulomb barrier

    International Nuclear Information System (INIS)

    Adamian, G.G.; Antonenko, N.V.; Malov, L.A.; Scamps, G.; Lacroix, D.

    2014-01-01

    The angular dependence of surface diffuseness is further discussed. The results of self-consistent calculations are compared with those obtained with the phenomenological mean-field potential. The rather simple parametrizations are suggested. The effects of surface polarization and hexadecapole deformation on the height of the Coulomb barrier are revealed. (authors)

  9. Time-dependent angular distribution of sputtered particles from amorphous targets

    International Nuclear Information System (INIS)

    Yamamura, Yasunori

    1990-01-01

    Using the time-evolution computer simulation code DYACAT, the time-dependent behavior of sputtering phenomena has been investigated. The DYACAT program is based on the binary collision approximation, and the cascade development in solids is followed time-evolutionally. The total sputtering yield, the angular distribution and the energy distribution of sputtered atoms are calculated as a function of time for 1 keV Ar→Cu, where the angle of incidence is the inverse surface normal. It is found that the angular distribution of the prompt collisional phase of the sputtering process shows an under-cosine and that the corresponding energy spectrum has a peak near 10 eV. The slow collisional phase of 1 keV Ar→Cu will start after 3x10 -14 s, and its angular distribution shows an over-cosine distribution. (orig.)

  10. Photon energy dependence and angular response of glass display used in mobile phones for accident dosimetry

    International Nuclear Information System (INIS)

    Discher, Michael; Greiter, Matthias; Woda, Clemens

    2014-01-01

    Previous studies have shown that glass displays extracted from mobile phones are suitable as emergency dosimeters in case of an accidental radiation overexposure using the thermoluminescence (TL) method. So far these studies have focused only on recovering the absorbed dose to the material. However, dose in air or dose to the victim carrying the device might be significantly different. Therefore the aim of this work was to investigate photon energy dependence and angular response of glass display used in modern mobile phones. An over-response of about a factor of five is observed for low photon energies compared to the response to Cs-137 (662 keV) which is in reasonable agreement with calculated values mass energy-absorption coefficients of glass and air. Little variation in the energy dependence can be seen for glass displays coming from three different mobile phone models. The angular response for display glass is flat with regard to air kerma within the incident angle of ±60°, independent of the irradiation setup used (with a water phantom or with air kerma reference conditions). For incident angles of 90° the shielding effect of the mobile phones becomes important. With the dosimetric characterization of the photon energy and angular dependencies the absorbed dose in a glass display can be transferred to a reference air kerma dose and provides a useful option for retrospective accident dosimetry. - Highlights: • Determination of the photon energy dependence and angular response for display glass used as an accident dosimeter. • Over-response of about a factor of five for low photon energies. • Flat angular response within incident angles between ±60°

  11. Angular dependence of coercivity with temperature in Co-based nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Bran, C., E-mail: cristina.bran@icmm.csic.es [Institute of Materials Science of Madrid, CSIC, 28049 Madrid (Spain); Espejo, A.P. [Departamento de Física, Universidad de Santiago de Chile (USACH) and Center for the Development of Nanoscience and Nanotechnology (CEDENNA), Avenida Ecuador 3493, 9170124 Santiago (Chile); Palmero, E.M. [Institute of Materials Science of Madrid, CSIC, 28049 Madrid (Spain); Escrig, J. [Departamento de Física, Universidad de Santiago de Chile (USACH) and Center for the Development of Nanoscience and Nanotechnology (CEDENNA), Avenida Ecuador 3493, 9170124 Santiago (Chile); Vázquez, M. [Institute of Materials Science of Madrid, CSIC, 28049 Madrid (Spain)

    2015-12-15

    The magnetic behavior of arrays of Co and CoFe nanowire arrays has been measured in the temperature range between 100 and 300 K. We have paid particular attention to the angular dependence of magnetic properties on the applied magnetic field orientation. The experimental angular dependence of coercivity has been modeled according to micromagnetic analytical calculations, and we found that the propagation of a transversal domain wall mode gives the best fitting with experimental observations. That reversal mode holds in the whole measuring temperature range, for nanowires with different diameters and crystalline structure. Moreover, the quantitative strength of the magnetocrystalline anisotropy and its magnetization easy axis are determined to depend on the crystalline structure and nanowires diameter. The evolution of the magnetocrystalline anisotropy with temperature for nanowires with different composition gives rise to an opposite evolution of coercivity with increasing temperature: it decreases for CoFe while it increases for Co nanowire arrays.

  12. Energy and angular dependence of the personal dosemeter in use at ITN-DPRSN

    Energy Technology Data Exchange (ETDEWEB)

    Alves, Joao G. [Departamento de Proteccao Radiologica e Seguranca Nuclear, Instituto Tecnologico e Nuclear, EN 10, 2686-953 Sacavem (Portugal)], E-mail: jgalves@itn.pt; Calado, Ana M.; Cardoso, Joao V.; Santos, Luis M. [Departamento de Proteccao Radiologica e Seguranca Nuclear, Instituto Tecnologico e Nuclear, EN 10, 2686-953 Sacavem (Portugal)

    2008-02-15

    In this paper the characterization of the dosimetry system and of the personal dosemeter in terms of the stability of the reader calibration factors and of the linearity of the response for the 137Cs reference radiation is presented. The energy and angular dependence of the whole body dosemeter are also shown. The energy dependence was determined performing irradiations with the X-ray narrow series beams N30, N40, N60, N80, N100, N120 and with the gamma reference radiations of 137Cs and 60Co [ISO 4037-1, 1996. X and Gamma Reference Radiation for Calibrating Dosemeters and Doserate Meters and for Determining Their Response as a Function of Photon Energy-Part 1: Radiation Characteristics and Production Methods. International Organization for Standardization, Geneva] in terms of Hp(10) incident on the ISO water slab phantom. The angular dependence of the dosemeter was determined for the angles 0 deg., {+-}20 deg., {+-}40 deg. and {+-}60 deg. with normal using the above mentioned radiation fields. All irradiations were performed at the Laboratorio de Metrologia das Radiacoes lonizantes of ITN-DPRSN. The experiments presented in this paper show the thermoluminescence dosimetry (TLD) system is stable and presents a linear behaviour over and extended dose range. The measurements allowed the determination of the energy dependence at normal incidence and of the angular dependence of the dosemeter currently in use. Further studies are being carried out in order to implement correction factors for supralinearity and low energy measurements.

  13. Angular dependence of optical fibre thermoluminescent dosimeters irradiated using kilo- and megavoltage X-rays

    International Nuclear Information System (INIS)

    Moradi, F.; Ung, N.M.; Mahdiraji, G.A.; Khandaker, M.U.; Entezam, A.; See, M.H.; Taib, N.A.; Amin, Y.M.; Bradley, D.A.

    2017-01-01

    Prior investigation of the suitability of optical fibres as thermoluminescent dosimeters for diagnostic and therapeutic radiation beams has not included detailed study of the effect of beam angulation. Present study of such response has made use of optical fibre of cylindrical shape, exposed to 30 kVp photons from an X-ray tube and a 6 MV photon beam from a linear accelerator. The effect of the irradiation medium was also studied, comparing response free-in-air against on-surface and in-depth irradiations through use of solid-water™ phantom. Standard optical fibre (ø =125 µm) shows non-uniform response to beams delivered at different incident angles. Monte Carlo simulation provided support for the experimental results, also obtaining absorbed dose in the fibres. The results of free-in-air condition simulated with mono-energy beam show angle-independent response for photons within the energy range 100–500 keV, while dependency has been observed for beam energies of <100 keV and >500 keV. Experimentally, the angular dependency up to 35% is observed in 30 kVp free-in-air, while in 6 MeV beam, this is reduced to 20%, 10%, and 3% in free-in-air, on phantom surface, and in-depth conditions, respectively. The observations have been justified by considering the range of secondary electrons in the dosimeter and the effect of scattered radiation. - Highlights: • Irradiated free-in-air standard optical fibre dosimeters show significant angular dependence. • The dependency varies for photon energies obtained at kVp and MV potentials. • The irradiation medium influences the angular dependence. • With MeV beam irradiations under CPE conditions the angular dependence decreases to 3%.

  14. Influence of the maximum applied magnetic field on the angular dependence of Magnetic Barkhausen Noise in API5L steels

    Energy Technology Data Exchange (ETDEWEB)

    Martínez-Ortiz, P. [Laboratorio de Evaluación No Destructiva Electromagnética (LENDE), ESIME-SEPI, Edif. Z-4, Instituto Politécnico Nacional, Zacatenco, México D.F. (Mexico); Pérez-Benítez, J.A., E-mail: japerezb@ipn.mx [Laboratorio de Evaluación No Destructiva Electromagnética (LENDE), ESIME-SEPI, Edif. Z-4, Instituto Politécnico Nacional, Zacatenco, México D.F. (Mexico); Espina-Hernández, J.H. [Laboratorio de Evaluación No Destructiva Electromagnética (LENDE), ESIME-SEPI, Edif. Z-4, Instituto Politécnico Nacional, Zacatenco, México D.F. (Mexico); Caleyo, F. [Departamento de Ingeniería Metalúrgica, ESIQIE, UPALM Edif. 7, Instituto Politécnico Nacional, Zacatenco, C.P. 07738 México D.F. (Mexico); Mehboob, N.; Grössinger, R. [Institute of Solid State Physics, Vienna University of Technology, Vienna A-1040 (Austria); Hallen, J.M. [Departamento de Ingeniería Metalúrgica, ESIQIE, UPALM Edif. 7, Instituto Politécnico Nacional, Zacatenco, C.P. 07738 México D.F. (Mexico)

    2016-03-01

    This work studies the influence of the maximum applied magnetic field on the angular dependence of the energy of the Magnetic Barkhausen Noise signal in three different API5L pipeline steels. The results show that the shape of the angular dependence of the Magnetic Barkhausen Noise energy changes with the increase of the amplitude of the applied magnetic field. This phenomenon is a consequence of the presence of unlike magnetization processes at different magnitudes of the applied magnetic field. The outcomes reveal the importance of controlling the value of the maximum applied field as parameter for the improvement of the MBN angular dependence measurements. - Highlights: • Study the angular dependence of MBN with applied field in three pipeline steels. • Reveals the change of this angular dependence with the increase applied field. • Explains this dependence based on the domain wall dynamics theory.

  15. Influence of the maximum applied magnetic field on the angular dependence of Magnetic Barkhausen Noise in API5L steels

    International Nuclear Information System (INIS)

    Martínez-Ortiz, P.; Pérez-Benítez, J.A.; Espina-Hernández, J.H.; Caleyo, F.; Mehboob, N.; Grössinger, R.; Hallen, J.M.

    2016-01-01

    This work studies the influence of the maximum applied magnetic field on the angular dependence of the energy of the Magnetic Barkhausen Noise signal in three different API5L pipeline steels. The results show that the shape of the angular dependence of the Magnetic Barkhausen Noise energy changes with the increase of the amplitude of the applied magnetic field. This phenomenon is a consequence of the presence of unlike magnetization processes at different magnitudes of the applied magnetic field. The outcomes reveal the importance of controlling the value of the maximum applied field as parameter for the improvement of the MBN angular dependence measurements. - Highlights: • Study the angular dependence of MBN with applied field in three pipeline steels. • Reveals the change of this angular dependence with the increase applied field. • Explains this dependence based on the domain wall dynamics theory.

  16. Anisotropic Magnetoresistance in Antiferromagnetic Sr_{2}IrO_{4}

    Directory of Open Access Journals (Sweden)

    C. Wang

    2014-11-01

    Full Text Available We report point-contact measurements of anisotropic magnetoresistance (AMR in a single crystal of antiferromagnetic Mott insulator Sr_{2}IrO_{4}. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature reveal negative magnetoresistances (up to 28% for modest magnetic fields (250 mT applied within the IrO_{2} a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of magnetoresistance shows a crossover from fourfold to twofold symmetry in response to an increasing magnetic field with angular variations in resistance from 1% to 14%. We tentatively attribute the fourfold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of antiferromagnetic-coupled moments in Sr_{2}IrO_{4}. The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys or oxides (0.1%–0.5% and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order, and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also to better harness the power of spintronics in a more technically favorable fashion.

  17. Magnetoresistance and magnetic breakdown phenomenon in amorphous magnetic alloys

    International Nuclear Information System (INIS)

    Chen Hui-yu; Gong Xiao-yu

    1988-01-01

    Transverse magnetoresistance in amorphous magnetic alloys (Fe/sub 1-//sub x/CO/sub x/) 82 Cu/sub 0.4/Si/sub 4.4/B/sub 13.2/ were measured at room temperature and in the magnetic field range 0--15 kOe. For large magnetic field, three different functional dependences of magnetoresistance on magnetic field strength have been found as follows: (1) Δrho/rho approaches saturation. (2) Δrho/rho increases proportionally to H 2 . (3) For x = 0.15, a sharp Δrho/rho peak appears at a certain magnetic field strength in spatial angular orientation of both magnetic field and electric currents. Case (3) is a magnetic breakdown phenomenon. Magnetic breakdown occurs at the gap between the spin-up and spin-down sheets of the Fermi surface. This gap is the spin-orbit gap and its magnitude is a sensitive function of magnetization. Hence the magnitude and width of the magnetoresistance peak and the magnetic field strength at the peak point are functions of angular orientation of both magnetic field and electric current

  18. Determining the spin dependent mean free path in Co90Fe10 using giant magnetoresistance

    Science.gov (United States)

    Shakespear, K. F.; Perdue, K. L.; Moyerman, S. M.; Checkelsky, J. G.; Harberger, S. S.; Tamboli, A. C.; Carey, M. J.; Sparks, P. D.; Eckert, J. C.

    2005-05-01

    The spin dependent mean free path in Co90Fe10 is determined as a function of temperature down to 5K using two different spin valve structures. At 5K the spin dependent mean free path for one structure was measured to be 9.4±1.4nm, decreasing by a factor of 3 by 350K. For the other structure, it is 7.5±0.5nm at 5K and decreased by a factor of 1.5 by 350K. In both cases, the spin dependent mean free path approaches the typical thickness of ferromagnetic layers in spin valves at room temperature and, thus, has an impact on the choice of design parameters for the development of new spintronic devices.

  19. Angular dependence of coercivity in isotropically aligned Nd-Fe-B sintered magnets

    Science.gov (United States)

    Matsuura, Yutaka; Nakamura, Tetsuya; Sumitani, Kazushi; Kajiwara, Kentaro; Tamura, Ryuji; Osamura, Kozo

    2018-05-01

    In order to understand the coercivity mechanism in Nd-Fe-B sintered magnets, the angular dependence of the coercivity of an isotropically aligned Nd15Co1.0B6Febal. sintered magnet was investigated through magnetization measurements using a vibrating sample magnetometer. These results are compared with the angular dependence calculated under the assumption that the magnetization reversal of each grain follows the Kondorskii law or, in other words, the 1/cos θ law for isotropic alignment distributions. The calculated angular dependence of the coercivity agrees very well with the experiment for magnetic fields applied between angles of 0 and 60°, and it is expected that the magnetization reversal occurs in each grain individually followed the 1/cos θ law. In contrast, this agreement between calculation and experiment is not found for anisotropic Nd-Fe-B samples. This implies that the coercivity of the aligned magnets depends upon the de-pinning of the domain walls from pinning sites. When the de-pinning occurs, it is expected that the domain walls are displaced through several grains at once.

  20. Angular dependence of the efficiency of the UV sensor polysulphone film

    International Nuclear Information System (INIS)

    Krins, A.; Bolsee, D.; Doerschel, B.; Gillotay, D.; Knuschke, P.

    2000-01-01

    The UV dose refers to the physical quantity radiant exposure, which is defined for a plane area element with fixed orientation in space and thus radiation intercepting this area element is weighted with the cosine of the angle of incidence. For this reason, a UV dosemeter also has to weight incoming radiation with the cosine of the angle of incidence. The angular dependence of the efficiency of polysulphone film was determined experimentally. The investigations were carried out with monochromatic UV radiation at three different wavelengths as well as with polychromatic radiation. Angles were varied between normal incidence and 70 deg. Within this range, the angular dependence of the efficiency of polysulphone film follows the cosine function. This behaviour is independent of the wavelength and applies for monochromatic as well as for polychromatic radiation. These experimental results are corroborated by earlier theoretical considerations. (author)

  1. Polarization-Dependent Measurements of Molecular Super Rotors with Oriented Angular Momenta

    Science.gov (United States)

    Murray, Matthew J.; Toro, Carlos; Liu, Qingnan; Mullin, Amy S.

    2014-05-01

    Controlling molecular motion would enable manipulation of energy flow between molecules. Here we have used an optical centrifuge to investigate energy transfer between molecular super rotors with oriented angular momenta. The polarizable electron cloud of the molecules interacts with the electric field of linearly polarized light that angularly accelerates over the time of the optical pulse. This process drives molecules into high angular momentum states that are oriented with the optical field and have energies far from equilibrium. High resolution transient IR spectroscopy reveals the dynamics of collisional energy transfer for these super excited rotors. The results of this study leads to a more fundamental understanding of energy balance in non-equilibrium environments and the physical and chemical properties of gases in a new regime of energy states. Results will be presented for several super rotor species including carbon monoxide, carbon dioxide, and acetylene. Polarization-dependent measurements reveal the extent to which the super rotors maintain spatial orientation of high angular momentum states.

  2. Angular dependence of dose equivalent response of an albedo neutron dosimeter

    International Nuclear Information System (INIS)

    Torres, B.A.; Boswell, E.; Schwartz, R.B.

    1994-01-01

    The ANSI provides procedures for testing the performance of dosimetry services. Although neutron dose equivalent angular response studies are not now mandated, future standards may well require that such studies be performed. Current studies with an albedo dosimeter will yield information regarding the angular dependence of dose equivalent response for this type of personnel dosimeter. Preliminary data for bare 252 Cf fluences show a marked decrease in dosimeter reading with increasing angle. The response decreased by an approximate factor of four. For the horizontal orientation, the same response was noted from both positive and negative angles. However, for the vertical orientation, the response was unexplainably assymetric. We are also examining the response of the personnel badge in moderated 252 Cf fluences. Responses from the moderated and unmoderated 252 Cf fields and theoretical calculations of the neutron angular response will be compared. This information will assist in building a data base for future comparisons of neutron angular responses with other neutron albedo dosimeters and phantoms

  3. Visual ergonomic aspects of glare on computer displays: glossy screens and angular dependence

    Science.gov (United States)

    Brunnström, Kjell; Andrén, Börje; Konstantinides, Zacharias; Nordström, Lukas

    2007-02-01

    Recently flat panel computer displays and notebook computer are designed with a so called glare panel i.e. highly glossy screens, have emerged on the market. The shiny look of the display appeals to the costumers, also there are arguments that the contrast, colour saturation etc improves by using a glare panel. LCD displays suffer often from angular dependent picture quality. This has been even more pronounced by the introduction of Prism Light Guide plates into displays for notebook computers. The TCO label is the leading labelling system for computer displays. Currently about 50% of all computer displays on the market are certified according to the TCO requirements. The requirements are periodically updated to keep up with the technical development and the latest research in e.g. visual ergonomics. The gloss level of the screen and the angular dependence has recently been investigated by conducting user studies. A study of the effect of highly glossy screens compared to matt screens has been performed. The results show a slight advantage for the glossy screen when no disturbing reflexes are present, however the difference was not statistically significant. When disturbing reflexes are present the advantage is changed into a larger disadvantage and this difference is statistically significant. Another study of angular dependence has also been performed. The results indicates a linear relationship between the picture quality and the centre luminance of the screen.

  4. Understanding stripe domains in Permalloy films via the angular dependence of permeability spectra

    Energy Technology Data Exchange (ETDEWEB)

    Wei, Jinwu; Feng, Hongmei; Zhu, Zengtai; Song, Chengkun; Wang, Xiangqian; Liu, Qingfang [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Wang, Jianbo, E-mail: wangjb@lzu.edu.cn [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Key Laboratory for Special Function Materials and Structural Design of the Ministry of the Education, Lanzhou University, Lanzhou 730000 (China)

    2017-06-15

    Highlights: • A phenomenological model is proposed to analyze the angular dependence of the μ″{sub max}. • The maximum canting angle θ{sub 0} in the stripe domain structure can be estimated. • Micromagnetic simulation results are nearly in accordance with the experimental results. - Abstract: An investigation of the angular dependence of the dynamic permeability spectra has been performed. Three Permalloy films with different thickness were used as the study samples that possess the stripe domains. In order to better understand the magnetization distribution in stripe domains, a theoretical approach was proposed to analyze the variation of the resonance intensity of permeability spectra. By fitting the angular dependence of the μ″{sub max} using a theoretical function, a coefficient Λ that can be used to evaluate the average value of the periodic function of the anting angle θ in a periodic stripe is obtained. As the film thickness increases, the decrease of the ratio between domain wall width and stripe domain width is happen. This enables that the coefficient Λ decreases with the increase of film thickness. By deducing this coefficient Λ, one can estimate the maximum canting angle θ{sub 0} ∼ 8° for the Permalloy films in our experiments.

  5. Tunneling anisotropic magnetoresistance in single-molecule magnet junctions

    Science.gov (United States)

    Xie, Haiqing; Wang, Qiang; Jiao, Hujun; Liang, J.-Q.

    2012-08-01

    We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling anisotropic magnetoresistance (TAMR), which varies with the angle between the magnetization direction of ferromagnetic lead and the easy axis of SMM. The angular dependence of TAMR can serve as a probe to determine experimentally the easy axis of SMM. Moreover, it is demonstrated that both the magnitude and the sign of TAMR are tunable by the bias voltage, suggesting a new spin-valve device with only one magnetic electrode in molecular spintronics.

  6. Transverse momentum dependence of the angular distribution of the Drell-Yan process

    International Nuclear Information System (INIS)

    Berger, Edmond L.; Qiu Jianwei; Rodriguez-Pedraza, Ricardo A.

    2007-01-01

    We calculate the transverse momentum Q perpendicular dependence of the helicity structure functions for the hadroproduction of a massive pair of leptons with pair invariant mass Q. These structure functions determine the angular distribution of the leptons in the pair rest frame. Unphysical behavior in the region Q perpendicular →0 is seen in the results of calculations done at fixed order in QCD perturbation theory. We use current conservation to demonstrate that the unphysical inverse-power and ln(Q/Q perpendicular ) logarithmic divergences in three of the four independent helicity structure functions share the same origin as the divergent terms in fixed-order calculations of the angular-integrated cross section. We show that the resummation of these divergences to all orders in the strong coupling strength α s can be reduced to the solved problem of the resummation of the divergences in the angular-integrated cross section, resulting in well-behaved predictions in the small Q perpendicular region. Among other results, we show the resummed part of the helicity structure functions preserves the Lam-Tung relation between the longitudinal and double spin-flip structure functions as a function of Q perpendicular to all orders in α s

  7. Angular-dependent I-V characteristics in borocarbide superconductor YNi2B2C

    International Nuclear Information System (INIS)

    Chu, R M; Chen, Q Y; Chu, W K

    2006-01-01

    We present angular-dependent current-voltage (I-V) measurements in borocarbide YNi 2 B 2 C single crystals near the vortex-glass irreversible line. External magnetic fields are applied along the angle θ with respect to the c-axis. The nonlinear I-V curves reveal scaling behaviour near the transition. Using the scaling analysis, the relevant critical exponents and vortex transition temperatures are determined for all orientations. The data agrees well with the vortex-glass (VG) model. No evidence was found that supports the existence of a Bose-glass (BG) type of transition

  8. Angular and energy dependence of ion bombardment of Mo/Si multilayers

    DEFF Research Database (Denmark)

    Voorma, H.J.; Louis, E.; Bijkerk, F.

    1997-01-01

    The process of ion bombardment is investigated for the fabrication of Mo/Si multilayer x-ray mirrors using e-beam evaporation. The ion treatment is applied immediately after deposition of each of the Si layers to smoothen the layers by removing an additional thickness of the Si layer. In this stu......, the angular dependence of the etch yield, obtained from the in situ reflectivity measurements, is investigated in order o determine the optimal ion beam parameters for the production of multilayer mirrors on curved substrates....

  9. Angular dependence of the attosecond time delay in the H 2 + ion

    Science.gov (United States)

    Kheifets, Anatoli; Serov, Vladislav

    2016-05-01

    Angular dependence of attosecond time delay relative to polarization of light can now be measured using combination of RABBITT and COLTRIMS techniques. This dependence brings particularly useful information in molecules where it is sensitive to the orientation of the molecular axis. Here we extend the theoretical studies of and consider a molecular ion H2+in combination of an attosecond pulse train and a dressing IR field which is a characteristic set up of a RABBIT measurement. We solve the time-dependent Schrödinger equation using a fast spherical Bessel transformation (SBT) for the radial variable, a discrete variable representation for the angular variables and a split-step technique for the time evolution. The use of SBT ensures correct phase of the wave function for a long time evolution which is especially important in time delay calculations. To speed up computations, we implement an expanding coordinate (EC) system which allows us to reach space sizes and time periods unavailable by other techniques. Australian Research Council DP120101805.

  10. Micromagnetic simulation and the angular dependence of coercivity and remanence for array of polycrystalline nickel nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Fuentes, G.P.; Holanda, J. [Departamento de Física, Universidade Federal de Pernambuco, Recife, PE 50670-901 (Brazil); Guerra, Y.; Silva, D.B.O.; Farias, B.V.M. [Pós-Graduação em Ciência de Materiais, Universidade Federal de Pernambuco, Recife, PE 50670-901 (Brazil); Padrón-Hernández, E., E-mail: padron@df.ufpe.br [Departamento de Física, Universidade Federal de Pernambuco, Recife, PE 50670-901 (Brazil); Pós-Graduação em Ciência de Materiais, Universidade Federal de Pernambuco, Recife, PE 50670-901 (Brazil)

    2017-02-01

    We present here our experimental results for the preparation and characterization of nanowires of nickel and the analysis of the angular dependence of coercivity and remanence using experimental data and micromagnetic simulation. The fabrication was made by using aluminum oxide membranes as templates and deposited nickel by an electrochemical route. The magnetic measurements showed that coercivity and remanence are dependent of the angle of application of the external magnetic field. Our results are different than that expected for the coherent, vortex and transversal modes of the reversion for the magnetic moments. According to the transmission electron microscopy analysis we can see that our nanowires have not a perfect cylindrical format. That is why we have used the ellipsoids chain model for better understanding the real structure of wires and its relation with the magnetic behavior. In order to generate theoretical results for this configuration we have made micromagnetic simulation using Nmag code. Our numerical results for the realistic distances are in correspondence with the magnetic measurements and we can see that there are contradictions if we assume the transverse reversal mode. Then, we can conclude that structure of nanowires should be taken into account to understand the discrepancies reported in the literature for the reversion mechanism in arrays of nickel nanowires. - Highlights: • We present answers for the problem of angular dependence for the coercivity and remanence. • Experimental and theoretical results confirmed the great importance of the real structure. • Micromagnetic calculations confirmed the importance of the real structure.

  11. Angular dependence of the coercivity and remanence of ordered arrays of Co nanowires

    International Nuclear Information System (INIS)

    Lavín, R.; Gallardo, C.; Palma, J.L.; Escrig, J.; Denardin, J.C.

    2012-01-01

    The angular dependence of the coercivity and remanence of ordered hexagonal arrays of Co nanowires prepared using anodic aluminum oxide templates was investigated. The experimental evolution of coercivity as a function of the angle, in which the external field is applied, is interpreted considering micromagnetic simulations. Depending on the angle between the axis of the wire and the applied magnetic field direction our results show that the magnetization reversal mode changes from vortex to a transverse domain wall. Besides, we observed that the dipolar interactions cause a reduction in coercive fields, mainly in the direction of easy magnetization of the nanowires. Good agreement between numerical and experimental data is obtained. - Highlights: ► Angular dependence of the coercivity and remanence of Co nanowire arrays. ► Results show that the magnetization reversal mode changes from vortex to a transverse domain wall. ► Dipolar interactions cause a reduction in coercive fields, which is the strongest in the direction of easy magnetization of the nanowire.

  12. Angular dependence of the coercivity and remanence of ordered arrays of Co nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Lavin, R. [Departamento de Fisica, Universidad de Santiago de Chile, USACH, Av. Ecuador 3493, Santiago (Chile); Facultad de Ingenieria, Universidad Diego Portales, UDP, Ejercito 441, Santiago (Chile); Gallardo, C.; Palma, J.L. [Departamento de Fisica, Universidad de Santiago de Chile, USACH, Av. Ecuador 3493, Santiago (Chile); Escrig, J. [Departamento de Fisica, Universidad de Santiago de Chile, USACH, Av. Ecuador 3493, Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology, CEDENNA, Av. Ecuador 3493, Santiago (Chile); Denardin, J.C., E-mail: jcdenardin@gmail.com [Departamento de Fisica, Universidad de Santiago de Chile, USACH, Av. Ecuador 3493, Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology, CEDENNA, Av. Ecuador 3493, Santiago (Chile)

    2012-08-15

    The angular dependence of the coercivity and remanence of ordered hexagonal arrays of Co nanowires prepared using anodic aluminum oxide templates was investigated. The experimental evolution of coercivity as a function of the angle, in which the external field is applied, is interpreted considering micromagnetic simulations. Depending on the angle between the axis of the wire and the applied magnetic field direction our results show that the magnetization reversal mode changes from vortex to a transverse domain wall. Besides, we observed that the dipolar interactions cause a reduction in coercive fields, mainly in the direction of easy magnetization of the nanowires. Good agreement between numerical and experimental data is obtained. - Highlights: Black-Right-Pointing-Pointer Angular dependence of the coercivity and remanence of Co nanowire arrays. Black-Right-Pointing-Pointer Results show that the magnetization reversal mode changes from vortex to a transverse domain wall. Black-Right-Pointing-Pointer Dipolar interactions cause a reduction in coercive fields, which is the strongest in the direction of easy magnetization of the nanowire.

  13. Equivalence between deep energy-dependent and shallow angular momentum dependent potentials

    International Nuclear Information System (INIS)

    Fiedeldey, H.; Sofianos, S.A.; Papastylianos, A.; Amos, K.A.; Allen, L.J.

    1989-01-01

    Recently Baye showed that supersymmetry can be applied to determine a shallow l-dependent potential phase equivalent to a deep potential, assumed to be energy-independent and have Panli forbidden states (PFS), for α-α scattering. The PFS are eliminated by this procedure. Such deep potentials are generated as equivalent local potentials (ELP) to the Resonating Group Model (RGM) and are generally energy-dependent. To eliminate this E-dependence as required for the application of Baye's method, l-dependent, but E-independent, deep local potentials were generated by the exact inversion method of Marchenko. Subsequently, the supersymmetric method was used to eliminate the PFS, ensuring that the generalized Levinson theorem is satisfied. As an example, the method was applied to the simple model of two dineutrons scattering in the RGM, where the deep ELP of Horiuchi has a substantial energy-dependence and one PFS only for l=O. 16 refs., 5 figs

  14. Large linear magnetoresistance and magnetothermopower in layered SrZnSb$_2$

    OpenAIRE

    Wang, Kefeng; Petrovic, C.

    2016-01-01

    We report the large linear magnetoresistance ($\\sim 300\\%$ in 9 T field at 2 K) and magnetothermopower in layered SrZnSb$_2$ crystal with quasi-two-dimensional Sb layers. A crossover from the semiclassical parabolic field dependent magnetoresistance to linear field dependent magnetoresistance with increasing magnetic field is observed. The magnetoresistance behavior can be described very well by combining the semiclassical cyclotron contribution and the quantum limit magnetoresistance. Magnet...

  15. Study on the angular dependence of personal exposure dosimeter - Focus on thermoluminescent dosimeter and photoluminescent dosimeter

    International Nuclear Information System (INIS)

    Dong, Kyung-Rae; Kweon, Dae Cheol; Chung, Woon-Kwan; Goo, Eun-Hoe; Dieter, Kevin; Choe, Chong-Hwan

    2011-01-01

    Radiation management departments place more emphasis on the accuracy of measurements than on the increase in the average dose and personal exposure dose from the use of radiation equipment and radioactive isotopes. Although current measurements are taken using devices, such as film badge dosimeters, pocket dosimeters and thermoluminescent dosimeters (TLDs), this study compared the angular dependence between the widely used TLDs and photoluminescent dosimeter (PLDs) in order to present primary data and evaluate the utility of PLD as a new dosimeter device. For X-ray fluoroscopy, a whole body phantom was placed on a table with a setting for the G-I technical factors fixed at a range of approximately 40 cm with a range of ±90 o at an interval scale of 15 o from the center location of an average radiological worker for PLDs (GD-450) and TLDs (Carot). This process was repeated 10 times, and at each time, the cumulative dosage was interpreted from 130 dosimeters using TLDs (UD-710R, Panasonic) and PLDs (FGD-650). The TLD and PLD showed a 52% and 23% decrease in the depth dosage from 0 o to -90 o , respectively. Therefore, PLDs have a lower angular dependence than TLDs.

  16. Angular dependence of depth doses in a tissue slab irradiated with monoenergetic photons

    International Nuclear Information System (INIS)

    Till, E.; Zankl, M.; Drexler, G.

    1995-12-01

    This report presents dose equivalents from external photon irradiation, normalised to air kerma free in air, on the central axis of a cuboid slab of ICRU tissue for various depths, photon energies and angles of beam incidence. The data were calculated by a Monte Carlo method using an idealised planar parallel source of monoenergetic photons. The data presented here aim at facilitating the calibration of individual dosimeters; they provide also an estimate of the quantity 'personal dose equivalent' defined by the ICRU. A detailed evaluation of the dependence of the calculated conversion coefficients on depth in the slab, photon energy and angle of incidence is given. A comparison with published measured an calculated values of angular dependence factors is made. (orig.)

  17. Excitation energy and angular momentum dependence of the nuclear level densities

    International Nuclear Information System (INIS)

    Razavi, R.; Kakavand, T.; Behkami, A. N.

    2007-01-01

    We have investigated the excitation energy (E) dependence of nuclear level density for Bethe formula and constant temperature model. The level density parameter aa nd the back shifted energy from the Bethe formula are obtained by fitting the complete level schemes. Also the level density parameters from the constant temperature model have been determined for several nuclei. we have shown that the microscopic theory provides more precise information on the nuclear level densities. On the other hand, the spin cut-off parameter and effective moment of inertia are determined by studying of the angular momentum (J) dependence of the nuclear level density, and effective moment of inertia is compared with rigid body value.

  18. Correction of measured Gamma-Knife output factors for angular dependence of diode detectors and PinPoint ionization chamber.

    Science.gov (United States)

    Hršak, Hrvoje; Majer, Marija; Grego, Timor; Bibić, Juraj; Heinrich, Zdravko

    2014-12-01

    Dosimetry for Gamma-Knife requires detectors with high spatial resolution and minimal angular dependence of response. Angular dependence and end effect time for p-type silicon detectors (PTW Diode P and Diode E) and PTW PinPoint ionization chamber were measured with Gamma-Knife beams. Weighted angular dependence correction factors were calculated for each detector. The Gamma-Knife output factors were corrected for angular dependence and end effect time. For Gamma-Knife beams angle range of 84°-54°. Diode P shows considerable angular dependence of 9% and 8% for the 18 mm and 14, 8, 4 mm collimator, respectively. For Diode E this dependence is about 4% for all collimators. PinPoint ionization chamber shows angular dependence of less than 3% for 18, 14 and 8 mm helmet and 10% for 4 mm collimator due to volumetric averaging effect in a small photon beam. Corrected output factors for 14 mm helmet are in very good agreement (within ±0.3%) with published data and values recommended by vendor (Elekta AB, Stockholm, Sweden). For the 8 mm collimator diodes are still in good agreement with recommended values (within ±0.6%), while PinPoint gives 3% less value. For the 4 mm helmet Diodes P and E show over-response of 2.8% and 1.8%, respectively. For PinPoint chamber output factor of 4 mm collimator is 25% lower than Elekta value which is generally not consequence of angular dependence, but of volumetric averaging effect and lack of lateral electronic equilibrium. Diodes P and E represent good choice for Gamma-Knife dosimetry. Copyright © 2014 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  19. Phase transition and angular momentum dependence of correlations in the rotational spectra of Ne20 and Ne22

    International Nuclear Information System (INIS)

    Satpathy, L.; Schmid, K.W.; Krewald, S.; Faessler, A.

    1974-01-01

    Multi-Configuration-Hartree-Fock (MCHF) calculations with angular momentum projection before the variation of the internal degree of freedom have been performed for the nuclei Ne 20 and Ne 22 . This procedure yields different correlated intrinsic states for the different members of a rotational band. Thus, the angular momentum dependence of correlations has been studied. Experimentally, the ground state spectra of Ne 20 and Ne 22 show properties similar to the phase transitions observed in some rare earth nuclei which have been well reproduced through the present calculations. The calculated spectra show a significant improvement compared to the ones obtained by variation before the angular momentum projection is effected. (author)

  20. Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

    Science.gov (United States)

    Sun, Mingling; Kubota, Takahide; Takahashi, Shigeki; Kawato, Yoshiaki; Sonobe, Yoshiaki; Takanashi, Koki

    2018-05-01

    Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.

  1. Angular multiplexing holograms of four images recorded on photopolymer films with recording-film-thickness-dependent holographic characteristics

    Science.gov (United States)

    Osabe, Keiichi; Kawai, Kotaro

    2017-03-01

    In this study, angular multiplexing hologram recording photopolymer films were studied experimentally. The films contained acrylamide as a monomer, eosin Y as a sensitizer, and triethanolamine as a promoter in a polyvinyl alcohol matrix. In order to determine the appropriate thickness of the photopolymer films for angular multiplexing, photopolymer films with thicknesses of 29-503 μm were exposed to two intersecting beams of a YVO laser at a wavelength of 532 nm to form a holographic grating with a spatial frequency of 653 line/mm. The diffraction efficiencies as a function of the incident angle of reconstruction were measured. A narrow angular bandwidth and high diffraction efficiency are required for angular multiplexing; hence, we define the Q value, which is the diffraction efficiency divided by half the bandwidth. The Q value of the films depended on the thickness of the films, and was calculated based on the measured diffraction efficiencies. The Q value of a 297-μm-thick film was the highest of the all films. Therefore, the angular multiplexing experiments were conducted using 300-μm-thick films. In the angular multiplexing experiments, the object beam transmitted by a square aperture was focused by a Fourier transform lens and interfered with a reference beam. The maximum order of angular multiplexing was four. The signal intensity that corresponds to the squared-aperture transmission and the noise intensity that corresponds to transmission without the square aperture were measured. The signal intensities decreased as the order of angular multiplexing increased, and the noise intensities were not dependent on the order of angular multiplexing.

  2. Angular dependence of coercivity derived from alignment dependence of coercivity in Nd-Fe-B sintered magnets

    Directory of Open Access Journals (Sweden)

    Yutaka Matsuura

    2018-01-01

    Full Text Available Experimental results of the alignment dependence of the coercivity in Nd-Fe-B sintered magnets showed that the angle of magnetization reversal for anisotropically aligned magnets was bigger than that obtained from the theoretical results calculated using the postulation that every grain independently reverses its magnetization direction following the 1/cos θ law. The angles of reversed magnetization (θ1 for Nd13.48Co0.55B5.76Febal. with alignment α=0.95 and for Nd12.75Dy0.84B5.81Co0.55Febal. with α=0.96 were 30° and 36°, respectively, which were very similar to that of an ideal magnet with a Gaussian distribution (σ=31° and 44°, respectively of the grain alignment. In this model, we postulated that every grain independently reversed according to the 1/cos θ law. The calculation results for the angular dependence of the coercivity using the values θ1=ω1(0°=30°, σ=31° and θ1=ω1(0°=36°, σ=44° could qualitatively and convincingly explain the observed angular dependence of the coercivity of Nd14.2B6.2Co1.0Febal. and Nd14.2Dy0.3B6.2Co1.0Febal.. It is speculated that the magnetic domain wall is pinned at grains tilted away from the easy magnetization direction, and when the magnetic domain wall de-pins from the tilted grains, the magnetic domain wall jumps through several grains. We suggest that the coercive force of the aligned magnet behaves like a low-aligned magnet owing to the magnetization reversal of the crust of the grains induced by the pinning and subsequent jumping of the magnetic domain wall.

  3. Angular dependence of coercivity derived from alignment dependence of coercivity in Nd-Fe-B sintered magnets

    Science.gov (United States)

    Matsuura, Yutaka; Nakamura, Tetsuya; Sumitani, Kazushi; Kajiwara, Kentaro; Tamura, Ryuji; Osamura, Kozo

    2018-01-01

    Experimental results of the alignment dependence of the coercivity in Nd-Fe-B sintered magnets showed that the angle of magnetization reversal for anisotropically aligned magnets was bigger than that obtained from the theoretical results calculated using the postulation that every grain independently reverses its magnetization direction following the 1/cos θ law. The angles of reversed magnetization (θ1) for Nd13.48Co0.55B5.76Febal. with alignment α=0.95 and for Nd12.75Dy0.84B5.81Co0.55Febal. with α=0.96 were 30° and 36°, respectively, which were very similar to that of an ideal magnet with a Gaussian distribution (σ=31° and 44°, respectively) of the grain alignment. In this model, we postulated that every grain independently reversed according to the 1/cos θ law. The calculation results for the angular dependence of the coercivity using the values θ1=ω1(0°)=30°, σ=31° and θ1=ω1(0°)=36°, σ=44° could qualitatively and convincingly explain the observed angular dependence of the coercivity of Nd14.2B6.2Co1.0Febal. and Nd14.2Dy0.3B6.2Co1.0Febal.. It is speculated that the magnetic domain wall is pinned at grains tilted away from the easy magnetization direction, and when the magnetic domain wall de-pins from the tilted grains, the magnetic domain wall jumps through several grains. We suggest that the coercive force of the aligned magnet behaves like a low-aligned magnet owing to the magnetization reversal of the crust of the grains induced by the pinning and subsequent jumping of the magnetic domain wall.

  4. Angular and dose dependence of CR-39 neutron response for shape-selected tracks

    CERN Document Server

    Tam, N C; Lakosi, L

    1999-01-01

    A shape selection method corresponding to an energy discrimination was used to eliminate unwanted events disturbing evaluation of CR-39 detectors in detecting tracks induced by particles both of perpendicular and oblique incidence. The angular dependence of the response was examined, detecting fast neutrons from sup 2 sup 5 sup 2 Cf with shape selection technique at various angles and distances. Also, the CR-39 track detectors with the sup 2 sup 5 sup 2 Cf source were exposed to high gamma-intensity of a sup 6 sup 0 Co irradiation facility in the range 0.1 to 4.5 kGy, similar to the exposures inside spent fuel assemblies. Using the two functions the lower limit of burnup could be determined by the method.

  5. Angular dependence of secondary ion emission from silicon bombarded with inert gas ions

    International Nuclear Information System (INIS)

    Wittmaack, K.

    1984-01-01

    The emission of positive and negative, atomic and molecular secondary ions sputtered from silicon has been studied under ultrahigh vacuum conditions. The sample was bombarded with 2-12 keV Ar + and Xe + ions at angles of incidence between 0 0 and 60 0 to the surface normal. The angular dependence of the secondary ion intensity as well as the energy spectra of Si + and Si - were found to differ significantly. The effect is attributed mostly do differences in the rate of neutralization. The stability of molecular ions appears to be independent of the charge state. Supporting evidence is provided for the idea that multiply charged secondary ions are due to Auger de-excitation of sputtered atoms in vacuum. (orig.)

  6. Angular dependent XPS study of surface band bending on Ga-polar n-GaN

    Science.gov (United States)

    Huang, Rong; Liu, Tong; Zhao, Yanfei; Zhu, Yafeng; Huang, Zengli; Li, Fangsen; Liu, Jianping; Zhang, Liqun; Zhang, Shuming; Dingsun, An; Yang, Hui

    2018-05-01

    Surface band bending and composition of Ga-polar n-GaN with different surface treatments were characterized by using angular dependent X-ray photoelectron spectroscopy. Upward surface band bending of varying degree was observed distinctly upon to the treatment methods. Besides the nitrogen vacancies, we found that surface states of oxygen-containing absorbates (O-H component) also contribute to the surface band bending, which lead the Fermi level pined at a level further closer to the conduction band edge on n-GaN surface. The n-GaN surface with lower surface band bending exhibits better linear electrical properties for Ti/GaN Ohmic contacts. Moreover, the density of positively charged surface states could be derived from the values of surface band bending.

  7. Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction.

    Science.gov (United States)

    Vasili, Hari Babu; Gamino, Matheus; Gàzquez, Jaume; Sánchez, Florencio; Valvidares, Manuel; Gargiani, Pierluigi; Pellegrin, Eric; Fontcuberta, Josep

    2018-04-11

    Pure spin currents have potential for use in energy-friendly spintronics. They can be generated by a flow of charge along a nonmagnetic metal with large spin-orbit coupling. This produces a spin accumulation at the surfaces, controllable by the magnetization of an adjacent ferromagnetic layer. Paramagnetic metals typically used are close to ferromagnetic instability and thus magnetic proximity effects can contribute to the observed angular-dependent magnetoresistance (ADMR). As interface phenomena govern the spin conductance across the metal/ferromagnetic-insulator heterostructures, unraveling these distinct contributions is pivotal for a full understanding of spin current conductance. Here, we report X-ray absorption and magnetic circular dichroism (XMCD) at Pt M and (Co, Fe) L absorption edges and atomically resolved energy electron loss spectroscopy (EELS) data of Pt/CoFe 2 O 4 bilayers, where CoFe 2 O 4 layers have been capped by Pt grown at different temperatures. It was found that the ADMR differs dramatically, dominated either by spin Hall magnetoresistance (SMR) associated with the spin Hall effect or by anisotropic magnetoresistance. The XMCD and EELS data indicate that the Pt layer grown at room temperature does not display any magnetic moment, whereas when grown at a higher temperature, it becomes magnetic due to interfacial Pt-(Co, Fe) alloying. These results enable differentiation of spin accumulation from interfacial chemical reconstructions and tailoring of the angular-dependent magnetoresistance.

  8. Specific fission J-window and angular momentum dependence of the fission barrier

    Energy Technology Data Exchange (ETDEWEB)

    Baba, Hiroshi; Saito, Tadashi; Takahashi, Naruto; Yokoyama, Akihiko [Osaka Univ., Suita (Japan); Shinohara, Atsushi

    1997-04-01

    A method to determine a unique J-window in the fission process was devised and the fissioning nuclide associated with thus extracted J-window was identified for each of the heavy-ion reaction systems. Obtained fission barriers at the resulting J-window were compared with the calculated values by the rotating finite range model (RFRM). The deduced barriers for individual nuclides were compared with the RFRM barriers to reproduce more or less the angular momentum dependence the RFRM prediction. The deduced systematic behavior of the fission barrier indicates no even-odd and shell corrections are necessary. The nuclear dissipation effect based on Kramer`s model revealed substantial reduction of the statistically deduced barrier heights and brought a fairly large scattering from the RFRM J-dependence. However, introduction of the temperature-dependent friction coefficient ({gamma} = 2 for T {>=} 1.0 MeV and 0.5 for T < 1.0 MeV) was found to bring about satisfactory agreement with both RFRM fission barriers and the pre-fission neutron multiplicity systematics. (author). 81 refs.

  9. Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance

    Science.gov (United States)

    He, Jiaming; Zhang, Yiran; Wen, Libin; Yang, Yusen; Liu, Jinyu; Wu, Yueshen; Lian, Hailong; Xing, Hui; Wang, Shun; Mao, Zhiqiang; Liu, Ying

    2017-07-01

    Ta2NiSe7 is a quasi-one-dimensional (quasi-1D) transition-metal chalcogenide with Ta and Ni chain structures. An incommensurate charge-density wave (CDW) in this quasi-1D structure was well studied previously using tunnelling spectrum, X-ray, and electron diffraction, whereas its transport property and the relation to the underlying electronic states remain to be explored. Here, we report our results of the magnetoresistance (MR) on Ta2NiSe7. A breakdown of Kohler's rule is found upon entering the CDW state. Concomitantly, a clear change in curvature in the field dependence of MR is observed. We show that the curvature change is well described by the two-band orbital MR, with the hole density being strongly suppressed in the CDW state, indicating that the p orbitals from Se atoms dominate the change in transport through CDW transition.

  10. Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction

    Science.gov (United States)

    Lee, Du-Yeong; Hong, Song-Hwa; Lee, Seung-Eun; Park, Jea-Gun

    2016-12-01

    It was found that in double MgO based perpendicular magnetic tunneling junction spin-valves ex-situ annealed at 400 °C, the tunneling magnetoresistance ratio was extremely sensitive to the material and thickness of the nanoscale spacer: it peaked at a specific thickness (0.40~0.53 nm), and the TMR ratio for W spacers (~134%) was higher than that for Ta spacers (~98%). This dependency on the spacer material and thickness was associated with the (100) body-centered-cubic crystallinity of the MgO layers: the strain enhanced diffusion length in the MgO layers of W atoms (~1.40 nm) was much shorter than that of Ta atoms (~2.85 nm) and the shorter diffusion length led to the MgO layers having better (100) body-centered-cubic crystallinity.

  11. Magnetoresistances in Ni80Fe20-ITO granular film

    International Nuclear Information System (INIS)

    Gao Chunhong; Chen Ke; Yang Yanxia; Xiong Yuanqiang; Chen Peng

    2012-01-01

    Highlights: ► Magnetoresistance (MR) in Ni 80 Fe 20 -ITO granular film are investigated. ► MR is positive at high temperature, and is negative at low temperature. ► MR results from the competition among three mechanisms. - Abstract: The magnetic properties, electrical properties and magnetoresistance are investigated in Ni 80 Fe 20 -ITO granular film with various volume fractions V NF of Ni 80 Fe 20 . The room temperature magnetization hysteresis of sample with V NF = 25% shows superparamagnetic behavior. Current-voltage curve of sample with V NF = 25% at 175 K shows typical tunneling-type behavior. The magnetoresistances of samples with low V NF are positive at high temperature, and are negative at low temperature. The temperature-dependent magnetoresistances result from the competition among ordinary magnetoresistances, the granular-typed tunneling magnetoresistance and the spin-mixing induced magnetoresistances.

  12. Experimental determination of the angular dependence factor for the dose equivalent for photons in calibration phantoms of PMMA

    International Nuclear Information System (INIS)

    Lund, E.; Carlsson, C.A.; Pernicka, F.

    1994-01-01

    The conversion coefficients from air kerma to dose equivalent at a depth of 10 mm in both a spherical and a slab phantom of PMMA have been determined for the X ray qualities: 40, 80 and 295 kV, ISO 'narrow' spectra; and for 137 Cs γ rays. The angular dependence factors have been experimentally determined for the same qualities and for different angles between 0 o and 180 o . The absorbed doses have been measured with thermoluminescence LiF dosemeters. The conversion coefficients and the angular dependence factors are generally found to agree well with calculated ones. Some minor discrepancies are found for the angular dependence factors and the 30 x 30 x 15 cm 3 PMMA slab phantom. (Author)

  13. Angular dependence on the records of dose in radiochromic films strips

    Energy Technology Data Exchange (ETDEWEB)

    Costa, K. C.; Prata M, A. [Centro Federal de Educacao Tecnologica de Minas Gerais, Centro de Engenharia Biomedica, Av. Amazonas 5253, 30421-169 Nova Suica, Belo Horizonte, Minas Gerais (Brazil); Alonso, T. C. [Centro de Desenvolvimento da Tecnologia Nuclear - CNEN, Av. Pte. Antonio Carlos 6627, 31270-901 Pampulha, Belo Horizonte, Minas Gerais (Brazil); Campo de O, P. M., E-mail: kamilacosta1995@gmail.com [Universidade Federal de Minas Gerais, Departamento de Anatomia e Imagen, Av. Prof. Alfredo Balena 190, 30130-100 Belo Horizonte, Minas Gerais (Brazil)

    2016-10-15

    Radiological images have relevant information both the diagnostic results as to treatment decisions. Then, the diagnostic quality of image that allows a proper analysis should be achieved with the lowest possible deposition of dose in a patient. CT scans produce sectional images that allow the observation of internal structures of the human body without overlap. As in conventional radiology, the contrast which allows obtaining CT images results from the difference in X-ray beam absorption, according to the characteristics of each tissue. The increased of the beam absorption by a tissue means that it appears brighter in the image. In CT scanners, X-ray tube rotates around the patient, and this rotation results in a cross-sectional image of the body. From a sectional image series is possible to obtain a 3-dimensional image that can be viewed from different angles. Among the methods of dose measurement is the use of radiochromic films, which record the energy deposition by darkening its emulsion. The radiochromic films show little sensitivity to visible light and respond better to exposure to ionizing radiation. In this work, strips of the radiochromic film GAFCHROMIC XR-QA2 were irradiated at different angular positions for radiation quality RQT8, defining a beam of X-rays generated from a voltage of 100 kV. The response of radiochromic films depending on the doses was assessed through digital images obtained by H P Scan jet G-4050 scanner. Digital images were analyzed using Image-J software, which allowed obtaining numerical values corresponding to the intensity of darkening for each film. The aim of this study is to evaluate the dose deposition in radiochromic film according to the angular variation in order how is affected the record. So, to examine the use of film strips to record doses in Computed Tomography tests. (Author)

  14. A filter for reducing the angular dependence of LiF; Ti, Mg for beta radiation

    International Nuclear Information System (INIS)

    Akabani, G.; Poston, J.W. Sr.

    1990-01-01

    This paper reports on an improvement in the angular dependence of LiF:Ti,Mg (TAD-100) for beta radiation which was achieved by using a special filter design which produced a constant dosimeter response over a range of +70 degrees and -70 degrees. The filter material used was acetate. The filter design was tested with three different beta sources, Sr/Y-90, Tl-204 and Pm-147 with average energies of 0.8, 0.24 and 0.06 MeV, respectively. The average response at 180 degrees of the new filtered dosimeter differed by less than 5% when compared to the response at zero degrees. An average decrease in sensitivity of 53% for Sr-90, 70% for Tl-204 and 67% for Pm-147 was obtained due to filter use. All doses were calculated for a depth dose in tissue of 0.07 mm equivalent to 7 mg/cm 2 as is recommended in ICRP Publication 26. A comparison of the energy dependence for a bare TAD-100 at 0.0 mm and 0.07 mm depth in tissue was obtained

  15. Fe concentration dependence of tunneling magnetoresistance in magnetic tunnel junctions using group-IV ferromagnetic semiconductor GeFe

    Directory of Open Access Journals (Sweden)

    Kosuke Takiguchi

    2017-10-01

    Full Text Available Group-IV-based ferromagnetic semiconductor Ge1−xFex (GeFe is one of the most promising materials for spin injection/detection in Si and Ge. In this paper, we demonstrate a systematic study of tunneling magnetoresistance (TMR in magnetic tunnel junctions (MTJs composed of Fe/MgO/Ge1−xFex with various Fe concentrations (x = 0.065, 0.105, 0.140, and 0.175. With increasing x, the TMR ratio increases up to 1.5% when x≤ 0.105, and it decreases when x> 0.105. This is the first observation of the TMR ratio over 1% in MTJs containing a group-IV ferromagnetic semiconductor. With increasing x, while the Curie temperature of GeFe increases, the MgO surface becomes rougher, which is thought to be the cause of the upper limit of the TMR ratio. The quality of the MgO layer on GeFe is an important factor for further improvement of TMR in Fe/MgO/GeFe MTJs.

  16. Modeling gravity-dependent plasticity of the angular vestibuloocular reflex with a physiologically based neural network.

    Science.gov (United States)

    Xiang, Yongqing; Yakushin, Sergei B; Cohen, Bernard; Raphan, Theodore

    2006-12-01

    A neural network model was developed to explain the gravity-dependent properties of gain adaptation of the angular vestibuloocular reflex (aVOR). Gain changes are maximal at the head orientation where the gain is adapted and decrease as the head is tilted away from that position and can be described by the sum of gravity-independent and gravity-dependent components. The adaptation process was modeled by modifying the weights and bias values of a three-dimensional physiologically based neural network of canal-otolith-convergent neurons that drive the aVOR. Model parameters were trained using experimental vertical aVOR gain values. The learning rule aimed to reduce the error between eye velocities obtained from experimental gain values and model output in the position of adaptation. Although the model was trained only at specific head positions, the model predicted the experimental data at all head positions in three dimensions. Altering the relative learning rates of the weights and bias improved the model-data fits. Model predictions in three dimensions compared favorably with those of a double-sinusoid function, which is a fit that minimized the mean square error at every head position and served as the standard by which we compared the model predictions. The model supports the hypothesis that gravity-dependent adaptation of the aVOR is realized in three dimensions by a direct otolith input to canal-otolith neurons, whose canal sensitivities are adapted by the visual-vestibular mismatch. The adaptation is tuned by how the weights from otolith input to the canal-otolith-convergent neurons are adapted for a given head orientation.

  17. The angular dependence of spin-state energy splittings in the ? core

    Science.gov (United States)

    Groß, Lynn; Steenbock, Torben; Herrmann, Carmen

    2013-07-01

    Spin-state energy splittings are highly relevant for catalysis, molecular magnetism, and materials science, yet continue to pose a challenge for electronic structure methods. For a Fe2O2+ 2 core, we evaluate the bridging angle dependence of energy splittings between ferromagnetically and antiferromagnetically coupled states for different exchange-correlation functionals, and compare with complete active space self-consistent field (CASSCF) values, also including second-order perturbative corrections (CASPT2). CASSCF and CASPT2 yield strong antiferromagnetic coupling, with the smallest coupling at 100°, and a smooth dependence on the angle for Fe-O-Fe angles of 70° to 120°. Interestingly, this is qualitatively the same behaviour as often found for stable dinuclear transition metal complexes. While all functionals show the same angular dependence as CASPT2, they favour the antiferromagnetic state less strongly. Pure functionals such as BP86, BLYP, SSB-D, and TPSS come closer to the CASPT2 results (with energy splittings by about 60 kJ/mol smaller than the CASPT2 ones) than hybrid functionals. The hybrid functionals B3LYP, B3LYP⋆, and PBE0 favour the antiferromagnetic state even less strongly, resulting in ferromagnetic coupling for angles around 100°. The good qualitative agreement between CASPT2 and CASSCF on the one hand and CASPT2 and density functional theory on the other hand for angles between 70° and 110° suggests that the chosen active space of 18 electrons in 14 orbitals may be adequate for spin-state energy splitting of Fe2O2+ 2 in that region (possibly due to error cancellation), while angles of 60° or 120° may require larger active spaces. This study is complemented by an analysis of local spins, local charges, and CASSCF natural orbitals.

  18. Angular dependence of dose sensitivity of nanoDot optically stimulated luminescent dosimeters in different radiation geometries

    Energy Technology Data Exchange (ETDEWEB)

    Jursinic, Paul A., E-mail: pjursinic@wmcc.org [West Michigan Cancer Center, 200 North Park Street, Kalamazoo, Michigan 49007 (United States)

    2015-10-15

    Purpose: A type of in vivo dosimeter, an optically stimulated luminescent dosimeter, OSLD, may have dose sensitivity that depends on the angle of incidence of radiation. This work measures how angular dependence of a nanoDot changes with the geometry of the phantom in which irradiation occurs and with the intrinsic structure of the nanoDot. Methods: The OSLDs used in this work were nanoDot dosimeters (Landauer, Inc., Glenwood, IL), which were read with a MicroStar reader (Landauer, Inc., Glenwood, IL). Dose to the OSLDs was delivered by 6 MV x-rays. NanoDots with various intrinsic sensitivities were irradiated in numerous phantoms that had geometric shapes of cylinders, rectangles, and a cube. Results: No angular dependence was seen in cylindrical phantoms, cubic phantoms, or rectangular phantoms with a thickness to width ratio of 0.3 or 1.5. An angular dependence of 1% was observed in rectangular phantoms with a thickness to width of 0.433–0.633. A group of nanoDots had sensitive layers with mass density of 2.42–2.58 g/cm{sup 3} and relative sensitivity of 0.92–1.09 and no difference in their angular dependence. Within experimental uncertainty, nanoDot measurements agree with a parallel-plate ion chamber at a depth of maximum dose. Conclusions: When irradiated in cylindrical, rectangular, and cubic phantoms, nanoDots show a maximum angular dependence of 1% or less at an incidence angle of 90°. For a sample of 78 new nanoDots, the range of their relative intrinsic sensitivity is 0.92–1.09. For a sample of ten nanoDots, on average, the mass in the sensitive layer is 73.1% Al{sub 2}O{sub 3}:C and 26.9% polyester. The mass density of the sensitive layer of a nanoDot disc is between 2.42 and 2.58 g/cm{sup 3}. The angular dependence is not related to Al{sub 2}O{sub 3}:C loading of the nanoDot disc. The nanoDot at the depth of maximum dose has no more angular dependence than a parallel-plate ion chamber.

  19. A comparison of the angular dependence of effective dose and effective dose equivalent

    International Nuclear Information System (INIS)

    Sitek, M.A.; Gierga, D.P.; Xu, X.G.

    1996-01-01

    In ICRP (International Commission on Radiological Protection) Publication 60, the set of critical organs and their weighing factors were changed, defining the quantity effective dose, E. This quantity replaced the effective dose equivalent, H E , as defined by ICRP 26. Most notably, the esophagus was added to the list of critical organs. The Monte Carlo neutron/photon transport code MCNP was used to determine the effective dose to sex-specific anthropomorphic phantoms. The phantoms, developed in previous research, were modified to include the esophagus. Monte Carlo simulations were performed for monoenergetic photon beams of energies 0.08 MeV, 0.3 MeV, and 1.0 MeV for various azimuthal and polar angles. Separate organ equivalent doses were determined for male and female phantoms. The resulting organ equivalent doses were calculated from arithmetic mean averages. The angular dependence of effective dose was compared with that of effective dose equivalent reported in previous research. The differences between the two definitions and possible implications to regulatory agencies were summarized

  20. LIGHT SCATTERING BY FRACTAL DUST AGGREGATES. I. ANGULAR DEPENDENCE OF SCATTERING

    Energy Technology Data Exchange (ETDEWEB)

    Tazaki, Ryo [Department of Astronomy, Graduate School of Science, Kyoto University, Kitashirakawa-Oiwake-cho, Sakyo-ku, Kyoto 606-8502 (Japan); Tanaka, Hidekazu [Astronomical Institute, Tohoku University, 6-3 Aramaki, Aoba-ku, Sendai 980-8578 (Japan); Okuzumi, Satoshi; Nomura, Hideko [Department of Earth and Planetary Sciences, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8551 (Japan); Kataoka, Akimasa, E-mail: rtazaki@kusastro.kyoto-u.ac.jp [Institute for Theoretical Astrophysics, Heidelberg University, Albert-Ueberle-Strasse 2, D-69120 Heidelberg (Germany)

    2016-06-01

    In protoplanetary disks, micron-sized dust grains coagulate to form highly porous dust aggregates. Because the optical properties of these aggregates are not completely understood, it is important to investigate how porous dust aggregates scatter light. In this study, the light scattering properties of porous dust aggregates were calculated using a rigorous method, the T -matrix method, and the results were then compared with those obtained using the Rayleigh–Gans–Debye (RGD) theory and Mie theory with the effective medium approximation (EMT). The RGD theory is applicable to moderately large aggregates made of nearly transparent monomers. This study considered two types of porous dust aggregates—ballistic cluster–cluster agglomerates (BCCAs) and ballistic particle–cluster agglomerates. First, the angular dependence of the scattered intensity was shown to reflect the hierarchical structure of dust aggregates; the large-scale structure of the aggregates is responsible for the intensity at small scattering angles, and their small-scale structure determines the intensity at large scattering angles. Second, it was determined that the EMT underestimates the backward scattering intensity by multiple orders of magnitude, especially in BCCAs, because the EMT averages the structure within the size of the aggregates. It was concluded that the RGD theory is a very useful method for calculating the optical properties of BCCAs.

  1. Angular-dependent light scattering from cancer cells in different phases of the cell cycle.

    Science.gov (United States)

    Lin, Xiaogang; Wan, Nan; Weng, Lingdong; Zhou, Yong

    2017-10-10

    Cancer cells in different phases of the cell cycle result in significant differences in light scattering properties. In order to harvest cancer cells in particular phases of the cell cycle, we cultured cancer cells through the process of synchronization. Flow cytometric analysis was applied to check the results of cell synchronization and prepare for light scattering measurements. Angular-dependent light scattering measurements of cancer cells arrested in the G1, S, and G2 phases have been performed. Based on integral calculations for scattering intensities from 5° to 10° and from 110° to 150°, conclusions have been reached. Clearly, the sizes of the cancer cells in different phases of the cell cycle dominated the forward scatter. Accompanying the increase of cell size with the progression of the cell cycle, the forward scattering intensity also increased. Meanwhile, the DNA content of cancer cells in every phase of the cell cycle is responsible for light scattering at large scatter angles. The higher the DNA content of cancer cells was, the greater the positive effect on the high-scattering intensity. As expected, understanding the relationships between the light scattering from cancer cells and cell cycles will aid in the development of cancer diagnoses. Also, it may assist in the guidance of antineoplastic drugs clinically.

  2. Surface effects on sputtered atoms and their angular and energy dependence

    International Nuclear Information System (INIS)

    Hassanein, A.M.

    1985-04-01

    A comprehensive three-dimensional Monte Carlo computer code, Ion Transport in Materials and Compounds (ITMC), has been developed to study in detail the surfaces related phenomena that affect the amount of sputtered atoms and back-scattered ions and their angular and energy dependence. A number of important factors that can significantly affect the sputtering behavior of a surface can be studied in detail, such as having different surface properties and composition than the bulk and synergistic effects due to surface segregation of alloys. These factors can be important in determining and lifetime of fusion reactor first walls and limiters. The ITMC Code is based on Monte Carlo methods to track down the path and the damage produced by charged particles as they slow down in solid metal surfaces or compounds. The major advantages of the ITMC code are its flexibility and ability to use and compare all existing models for energy losses, all known interatomic potentials, and to use different materials and compounds with different surface and bulk composition to allow for dynamic surface composition to allow for dynamic surface composition changes. There is good agreement between the code and available experimental results without using adjusting parameters for the energy losses mechanisms. The ITMC Code is highly optimized, very fast to run and easy to use

  3. Correction of the angular dependence of satellite retrieved LST at global scale using parametric models

    Science.gov (United States)

    Ermida, S. L.; Trigo, I. F.; DaCamara, C.; Ghent, D.

    2017-12-01

    Land surface temperature (LST) values retrieved from satellite measurements in the thermal infrared (TIR) may be strongly affected by spatial anisotropy. This effect introduces significant discrepancies among LST estimations from different sensors, overlapping in space and time, that are not related to uncertainties in the methodologies or input data used. Furthermore, these directional effects deviate LST products from an ideally defined LST, which should represent to the ensemble of directional radiometric temperature of all surface elements within the FOV. Angular effects on LST are here conveniently estimated by means of a parametric model of the surface thermal emission, which describes the angular dependence of LST as a function of viewing and illumination geometry. Two models are consistently analyzed to evaluate their performance of and to assess their respective potential to correct directional effects on LST for a wide range of surface conditions, in terms of tree coverage, vegetation density, surface emissivity. We also propose an optimization of the correction of directional effects through a synergistic use of both models. The models are calibrated using LST data as provided by two sensors: MODIS on-board NASA's TERRA and AQUA; and SEVIRI on-board EUMETSAT's MSG. As shown in our previous feasibility studies the sampling of illumination and view angles has a high impact on the model parameters. This impact may be mitigated when the sampling size is increased by aggregating pixels with similar surface conditions. Here we propose a methodology where land surface is stratified by means of a cluster analysis using information on land cover type, fraction of vegetation cover and topography. The models are then adjusted to LST data corresponding to each cluster. It is shown that the quality of the cluster based models is very close to the pixel based ones. Furthermore, the reduced number of parameters allows improving the model trough the incorporation of a

  4. On a relationship between the geometry of cones on sputtered surfaces and the angular dependence of sputtered yields

    International Nuclear Information System (INIS)

    Chadderton, L.T.

    1977-01-01

    It is widely believed that the phenomenon responsible for the familiar peak in the angular dependence of sputtered yields also gives rise to characteristic semiangles α of conical protruberances on sputtered surfaces. It is shown that α corresponds to the process giving rise to the minimum rather than the maximum. No accurate measurements of the minimum have yet been made. (Auth.)

  5. Giant exchange bias and its angular dependence in Co/CoO core-shell nanowire assemblies

    International Nuclear Information System (INIS)

    Gandha, Kinjal; Chaudhary, Rakesh P.; Mohapatra, Jeotikanta; Koymen, Ali R.; Liu, J. Ping

    2017-01-01

    The exchange-bias field (H EB ) and its angular dependence are systematically investigated in Co/CoO core-shell nanowire assemblies (∼15 nm in diameter and ∼200 nm in length) consisting of single-crystalline Co core and polycrystalline CoO shell. Giant exchange-bias field (H EB ) up to 2.4 kOe is observed below a blocking temperature (T EB ∼150 K) in the aligned Co/CoO nanowire assemblies. It is also found that there is an angular dependence between the H EB and the applied magnetization direction. The H EB showed a peak at 30° between the applied field and the nanowire aligned direction, which may be attributed to the noncollinear spin orientations at the interface between the ferromagnetic core and the antiferromagnetic shell. This behavior is quantitatively supported by an analytical calculation based on Stoner–Wohlfarth model. This study underlines the importance of the competing magnetic anisotropies at the interface of Co/CoO core-shell nanowires. - Highlights: • Giant exchange bias is observed in oriented Co/CoO core-shell nanowire assemblies. • Study of angular and temperature dependence of the exchange bias effect. • Competing magnetic anisotropies at the interface of Co/CoO core-shell nanowires. • Effect of misaligned spins in FM/AFM interface on angular dependence of exchange bias. • We explain the analytical model that accounts for experimental results.

  6. A study of the angular momentum dependence of the phase shift for finite range and Coulomb potentials

    International Nuclear Information System (INIS)

    Valluri, S.R.; Romo, W.J.

    1989-01-01

    The dependence of the phase shift δ l (k) on the angular momentum l is investigated. An analytic expression for the derivative of the phase shift with respect to angular momentum is derived for a class of potentials that includes complex and real potentials. The potentials behave like the finite range potential for small r and like a Coulomb potential for large r. Specific examples like the square well, the pure point charge Coulomb and a combination of a square well and the Coulomb potential are analytically treated. Possible applications are briefly indicated. (orig.)

  7. Colossal magnetoresistance manganites

    Indian Academy of Sciences (India)

    Keywords. Manganites; colossal magnetoresistance; strongly correlated electron systems; metal-insulator transitions and other electronic transitions; Jahn-Teller polarons and electron-phonon interaction.

  8. Angular dependence of the MOSFET dosimeter and its impact on in vivo surface dose measurement in breast cancer treatment.

    Science.gov (United States)

    Qin, S; Chen, T; Wang, L; Tu, Y; Yue, N; Zhou, J

    2014-08-01

    The focus of this study is the angular dependence of two types of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) dosimeters (MOSFET20 and OneDose/OneDosePlus) when used for surface dose measurements. External beam radiationat different gantry angles were delivered to a cubic solid water phantom with a MOSFET placed on the top surface at CAX. The long axis of the MOSFET was oriented along the gantry axis of rotation, with the dosimeter (bubble side) facing the radiation source. MOSFET-measured surface doses were compared against calibrated radiochromic film readings. It was found that both types of MOSFET dosimeters exhibited larger than previously reported angular dependence when measuring surface dose in beams at large oblique angles. For the MOSFET20 dosimeter the measured surface dose deviation against film readings was as high as 17% when the incident angle was 72 degrees to the norm of the phantom surface. It is concluded that some MOSFET dosimeters may have a strong angular dependence when placed on the surface of water-equivalent material, even though they may have an isotropic angular response when surrounded by uniform medium. Extra on-surface calibration maybe necessary before using MOSFET dosimeters for skin dose measurement in tangential fields.

  9. Angular Dependency of Hyperspectral Measurements over Wheat Characterized by a Novel UAV Based Goniometer

    Directory of Open Access Journals (Sweden)

    Andreas Burkart

    2015-01-01

    Full Text Available In this study we present a hyperspectral flying goniometer system, based on a rotary-wing unmanned aerial vehicle (UAV equipped with a spectrometer mounted on an active gimbal. We show that this approach may be used to collect multiangular hyperspectral data over vegetated environments. The pointing and positioning accuracy are assessed using structure from motion and vary from σ = 1° to 8° in pointing and σ = 0.7 to 0.8 m in positioning. We use a wheat dataset to investigate the influence of angular effects on the NDVI, TCARI and REIP vegetation indices. Angular effects caused significant variations on the indices: NDVI = 0.83–0.95; TCARI = 0.04–0.116; REIP = 729–735 nm. Our analysis highlights the necessity to consider angular effects in optical sensors when observing vegetation. We compare the measurements of the UAV goniometer to the angular modules of the SCOPE radiative transfer model. Model and measurements are in high accordance (r2 = 0.88 in the infrared region at angles close to nadir; in contrast the comparison show discrepancies at low tilt angles (r2 = 0.25. This study demonstrates that the UAV goniometer is a promising approach for the fast and flexible assessment of angular effects.

  10. Energy dependence of angular distributions of sputtered particles by ion-beam bombardment at normal incidence

    International Nuclear Information System (INIS)

    Matsuda, Yoshinobu; Ueda, Yasutoshi; Uchino, Kiichiro; Muraoka, Katsunori; Maeda, Mitsuo; Akazaki, Masanori; Yamamura, Yasunori.

    1986-01-01

    The angular distributions of sputtered Fe-atoms were measured using the laser fluorescence technique during Ar-ion bombardment for energies of 0.6, 1, 2 and 3 keV at normal incidence. The measured cosine distribution at 0.6 keV progressively deviated to an over-cosine distribution at higher energies, and at 3 keV the angular distribution was an overcosine distribution of about 20 %. The experimental results agree qualitatively with calculations by a recent computer simulation code, ACAT. The results are explained by the competition between surface scattering and the effects of primary knock-on atoms, which tend to make the angular distributions over-cosine and under-cosine, respectively. (author)

  11. Critical angular momentum dependence of the fission barriers and the stability of superheavy nuclei

    International Nuclear Information System (INIS)

    Magda, M.T.; Sandulescu, A.

    1978-10-01

    Measured complete fusion and evaporation cross section data are used to determine the critical angular momenta for which the fission barriers are vanishing in the region of nuclei with Z = 102 - 116. It is shown that, in order to fit these data, larger values of the critical angular momenta are obtained for superheavy nuclei (Z = 110 - 112) than for heavy ones (Z = 102 - 107), which indicates a relatively higher stability against fission for superheavy nuclei, in agreement with the theoretically predicted island of stability. (author)

  12. Magnetoresistance in RCo2 spin-fluctuation systems

    International Nuclear Information System (INIS)

    Gratz, E.; Nowotny, H.; Enser, J.; Bauer, E.; Hense, K.

    2004-01-01

    The effect of the spin fluctuations on the field and temperature dependence of the magnetoresistance in ScCo 2 and LuCo 2 was studied. The experimental data where explained assuming two competing mechanisms determining the magnetoresistance of these substances. One is the 'normal magnetoresistance' caused by the influence of the Lorentz force on conduction electron trajectories. The other is due to the suppression of the spin fluctuations caused by an external magnetic field. This interplay give rise to a pronounced drop of the magnetoresistance towards the lower temperature range

  13. Giant magnetoresistance through a single molecule.

    Science.gov (United States)

    Schmaus, Stefan; Bagrets, Alexei; Nahas, Yasmine; Yamada, Toyo K; Bork, Annika; Bowen, Martin; Beaurepaire, Eric; Evers, Ferdinand; Wulfhekel, Wulf

    2011-03-01

    Magnetoresistance is a change in the resistance of a material system caused by an applied magnetic field. Giant magnetoresistance occurs in structures containing ferromagnetic contacts separated by a metallic non-magnetic spacer, and is now the basis of read heads for hard drives and for new forms of random access memory. Using an insulator (for example, a molecular thin film) rather than a metal as the spacer gives rise to tunnelling magnetoresistance, which typically produces a larger change in resistance for a given magnetic field strength, but also yields higher resistances, which are a disadvantage for real device operation. Here, we demonstrate giant magnetoresistance across a single, non-magnetic hydrogen phthalocyanine molecule contacted by the ferromagnetic tip of a scanning tunnelling microscope. We measure the magnetoresistance to be 60% and the conductance to be 0.26G(0), where G(0) is the quantum of conductance. Theoretical analysis identifies spin-dependent hybridization of molecular and electrode orbitals as the cause of the large magnetoresistance.

  14. An Extended Greuling-Goertzel Approximation with a P{sub n}-Approximation in the Angular Dependence

    Energy Technology Data Exchange (ETDEWEB)

    Haakansson, Rune

    1964-04-15

    The slowing-down spectrum has been calculated for different media. It is given in slab geometry as a function of space at the beginning of the epithermal region (10 eV). The angular dependence is also shown. The basic method is that given by E. Greuling, F. Clark and G. Goertzel in a NDA report, but in this report it is permissible to include more terms in the legendre expansion.

  15. Giant exchange bias and its angular dependence in Co/CoO core-shell nanowire assemblies

    Energy Technology Data Exchange (ETDEWEB)

    Gandha, Kinjal; Chaudhary, Rakesh P.; Mohapatra, Jeotikanta; Koymen, Ali R.; Liu, J. Ping, E-mail: pliu@uta.edu

    2017-07-12

    The exchange-bias field (H{sub EB}) and its angular dependence are systematically investigated in Co/CoO core-shell nanowire assemblies (∼15 nm in diameter and ∼200 nm in length) consisting of single-crystalline Co core and polycrystalline CoO shell. Giant exchange-bias field (H{sub EB}) up to 2.4 kOe is observed below a blocking temperature (T{sub EB} ∼150 K) in the aligned Co/CoO nanowire assemblies. It is also found that there is an angular dependence between the H{sub EB} and the applied magnetization direction. The H{sub EB} showed a peak at 30° between the applied field and the nanowire aligned direction, which may be attributed to the noncollinear spin orientations at the interface between the ferromagnetic core and the antiferromagnetic shell. This behavior is quantitatively supported by an analytical calculation based on Stoner–Wohlfarth model. This study underlines the importance of the competing magnetic anisotropies at the interface of Co/CoO core-shell nanowires. - Highlights: • Giant exchange bias is observed in oriented Co/CoO core-shell nanowire assemblies. • Study of angular and temperature dependence of the exchange bias effect. • Competing magnetic anisotropies at the interface of Co/CoO core-shell nanowires. • Effect of misaligned spins in FM/AFM interface on angular dependence of exchange bias. • We explain the analytical model that accounts for experimental results.

  16. Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

    Science.gov (United States)

    Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

    2001-01-01

    The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

  17. Fast neutrino flavor conversions near the supernova core with realistic flavor-dependent angular distributions

    Energy Technology Data Exchange (ETDEWEB)

    Dasgupta, Basudeb; Sen, Manibrata [Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai, 400005 (India); Mirizzi, Alessandro, E-mail: bdasgupta@theory.tifr.res.in, E-mail: alessandro.mirizzi@ba.infn.it, E-mail: manibrata.sen@gmail.com [Dipartimento Interateneo di Fisica ' Michelangelo Merlin' , Via Amendola 173, 70126 Bari (Italy)

    2017-02-01

    It has been recently pointed out that neutrino fluxes from a supernova can show substantial flavor conversions almost immediately above the core. Using linear stability analyses and numerical solutions of the fully nonlinear equations of motion, we perform a detailed study of these fast conversions , focussing on the region just above the supernova core. We carefully specify the instabilities for evolution in space or time, and find that neutrinos travelling towards the core make fast conversions more generic, i.e., possible for a wider range of flux ratios and angular asymmetries that produce a crossing between the zenith-angle spectra of ν {sub e} and ν-bar {sub e} . Using fluxes and angular distributions predicted by supernova simulations, we find that fast conversions can occur within tens of nanoseconds, only a few meters away from the putative neutrinospheres. If these fast flavor conversions indeed take place, they would have important implications for the supernova explosion mechanism and nucleosynthesis.

  18. CASIM calculations and angular dependent parameter β in the Moyer model

    International Nuclear Information System (INIS)

    Yamaguchi, Chiri.

    1988-04-01

    The dose equivalent on the shield surface has been calculated using both the Moyer model and the Monte Carlo code CASIM. Calculations with various values of the angular distribution parameter β in the Moyer model show that β = 7.0 ± 0.5 would meet the CASIM results at most, especially regarding locations at which the values of the maximum dose equivalent occur. (author)

  19. Spin Hall magnetoresistance at high temperatures

    International Nuclear Information System (INIS)

    Uchida, Ken-ichi; Qiu, Zhiyong; Kikkawa, Takashi; Iguchi, Ryo; Saitoh, Eiji

    2015-01-01

    The temperature dependence of spin Hall magnetoresistance (SMR) in Pt/Y 3 Fe 5 O 12 (YIG) bilayer films has been investigated in a high temperature range from room temperature to near the Curie temperature of YIG. The experimental results show that the magnitude of the magnetoresistance ratio induced by the SMR monotonically decreases with increasing the temperature and almost disappears near the Curie temperature. We found that, near the Curie temperature, the temperature dependence of the SMR in the Pt/YIG film is steeper than that of a magnetization curve of the YIG; the critical exponent of the magnetoresistance ratio is estimated to be 0.9. This critical behavior of the SMR is attributed mainly to the temperature dependence of the spin-mixing conductance at the Pt/YIG interface

  20. Transport methods: general. 3. An Additive Angular-Dependent Re-balance Acceleration Method for Neutron Transport Equations

    International Nuclear Information System (INIS)

    Cho, Nam Zin; Park, Chang Je

    2001-01-01

    An additive angular-dependent re-balance (AADR) factor acceleration method is described to accelerate the source iteration of discrete ordinates transport calculation. The formulation of the AADR method follows that of the angular-dependent re-balance (ADR) method in that the re-balance factor is defined only on the cell interface and in that the low-order equation is derived by integrating the transport equation (high-order equation) over angular subspaces. But, the re-balance factor is applied additively. While the AADR method is similar to the boundary projection acceleration and the alpha-weighted linear acceleration, it is more general and does have distinct features. The method is easily extendible to DP N and low-order S N re-balancing, and it does not require consistent discretizations between the high- and low-order equations as in diffusion synthetic acceleration. We find by Fourier analysis and numerical results that the AADR method with a chosen form of weighting functions is unconditionally stable and very effective. There also exists an optimal weighting parameter that leads to the smallest spectral radius. The AADR acceleration method described in this paper is simple to implement, unconditionally stable, and very effective. It uses a physically based weighting function with an optimal parameter, leading to the best spectral radius of ρ<0.1865, compared to ρ<0.2247 of DSA. The application of the AADR acceleration method with the LMB scheme on a test problem shows encouraging results

  1. Big magnetoresistance: magnetic polarons

    International Nuclear Information System (INIS)

    Teresa, J.M. de; Ibarra, M.R.

    1997-01-01

    By using several macro and microscopic experimental techniques we have given evidence for magnetoresistance in manganese oxides caused by the effect of the magnetic field on the magnetic polarons. (Author) 3 refs

  2. Magnetoresistive waves in plasmas

    International Nuclear Information System (INIS)

    Felber, F.S.; Hunter, R.O. Jr.; Pereira, N.R.; Tajima, T.

    1982-01-01

    The self-generated magnetic field of a current diffusing into a plasma between conductors can magnetically insulate the plasma. Propagation of magnetoresistive waves in plasmas is analyzed. Applications to plasma opening switches are discussed

  3. Probing giant magnetoresistance with THz spectroscopy

    DEFF Research Database (Denmark)

    Jin, Zuanming; Tkach, Alexander; Casper, Frederick

    2014-01-01

    We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined. © 2014 OSA.......We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined. © 2014 OSA....

  4. Microwave absorption across Tc: Determination of the angular dependance Hc2(theta)

    OpenAIRE

    Shaltiel, David; Bill, Hans; Grayevsky, A.; Junod, Alain; Lovy, Dominique; Sadowski, Wojciech; Walker, Eric

    1991-01-01

    It is shown that measuring microwave absorption in high-Tc superconductors at constant and very low magnetic fields, using magnetic-field modulation, is, under some conditions, equivalent to temperature modulation when sweeping the temperature across Tc. Using an ESR spectrometer, the derivative of microwave absorption is measured close to Tc. This allows a determination of the relative angular variation of dHc2/dT at T=Tc in single crystals of Y-Ba-Cu-O. The data fit the Ginzburg-Landau theo...

  5. Spin-flip induced magnetoresistance in positionally disordered organic solids.

    Science.gov (United States)

    Harmon, N J; Flatté, M E

    2012-05-04

    A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Faster spin-flip transitions open up "spin-blocked" pathways to become viable conduction channels and hence produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with previous measurements, including the sensitive dependence of the magnetic-field dependence of the magnetoresistance on the ratio of the carrier hopping time to the hyperfine-induced carrier spin precession time. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory.

  6. Temperature dependent evolution of the electronic and local atomic structure in the cubic colossal magnetoresistive manganite La1-xSrxMnO3

    International Nuclear Information System (INIS)

    Arenholz, Elke; Mannella, N.; Booth, C.H.; Rosenhahn, A.; Sell, B.C.; Nambu, A.; Marchesini, S.; Mun, B. S.; Yang, S.-H.; Watanabe, M.; Ibrahim, K.; Arenholz, E.; Young, A.; Guo, J.; Tomioka, Y.; Fadley, C.S.

    2007-01-01

    We have studied the temperature-dependent evolution of the electronic and local atomic structure in the cubic colossal magnetoresistive manganite La 1-x Sr x MnO 3 (x= 0.3-0.4) with core and valence level photoemission (PE), x-ray absorption spectroscopy (XAS), x-ray emission spectroscopy (XES), resonant inelastic x-ray scattering (RIXS), extended x-ray absorption fine structure (EXAFS) spectroscopy and magnetometry. As the temperature is varied across the Curie temperature T c , our PE experiments reveal a dramatic change of the electronic structure involving an increase in the Mn spin moment from ∼ 3 (micro)B to ∼ 4 (micro)B, and a modification of the local chemical environment of the other constituent atoms indicative of electron localization on the Mn atom. These effects are reversible and exhibit a slow-timescale ∼200 K-wide hysteresis centered at T c . Based upon the probing depths accessed in our PE measurements, these effects seem to survive for at least 35-50 (angstrom) inward from the surface, while other consistent signatures for this modification of the electronic structure are revealed by more bulk sensitive spectroscopies like XAS and XES/RIXS. We interpret these effects as spectroscopic fingerprints for polaron formation, consistent with the presence of local Jahn-Teller distortions of the MnO 6 octahedra around the Mn atom, as revealed by the EXAFS data. Magnetic susceptibility measurements in addition show typical signatures of ferro-magnetic clusters formation well above the Curie temperature

  7. Measurements of Hk and Ms in thin magnetic films by the angular dependence of the planar Hall effect

    Science.gov (United States)

    Vatskicheva, M.; Vatskichev, L.

    1987-11-01

    It is shown that the angular dependences of the planar Hall effect measured with infinite magnetic field and with magnetic field H⩾ Hk have an intersection point and this fact is enough for measuring the anisotropy field Hk applying the method presented by Pastor, Ferreiro and Torres in J. Magn. Magn. Mat. 53 (1986) 349, 62 (1986) 101. The scaling of the Hall tension U proportional to M2s in mV/Am -1 gives a possibility for calculating the Ms-values of the films. These assumptions are verified for NiFe- and NiFeGe films with a uniaxial magnetic anisotropy.

  8. Modelling Angular Dependencies in Land Surface Temperatures From the SEVIRI Instrument onboard the Geostationary Meteosat Second Generation Satellites

    DEFF Research Database (Denmark)

    Rasmussen, Mads Olander; Pinheiro, AC; Proud, Simon Richard

    2010-01-01

    on vegetation structure and viewing and illumination geometry. Despite this, these effects are not considered in current operational LST products from neither polar-orbiting nor geostationary satellites. In this paper, we simulate the angular dependence that can be expected when estimating LST with the viewing...... geometry of the geostationary Meteosat Second Generation Spinning Enhanced Visible and Infrared Imager sensor across the African continent and compare it to a normalized view geometry. We use the modified geometric projection model that estimates the scene thermal infrared radiance from a surface covered...

  9. Angular dependence of the upper critical field in Bi2Sr2CuO6+δ

    International Nuclear Information System (INIS)

    Vedeneev, S.I.; Ovchinnikov, Yu.N.

    2002-01-01

    The angular dependence of the upper critical field has been investigated in a wide range of temperatures in very high-quality Bi 2 Sr 2 CuO 6+δ single crystals with critical temperature ≅ 9 K in magnetic fields up to 28 T. Although the typical value of the normal state resistivity ratio ≅ 10 4 , the anisotropy ratio of the upper critical fields is much smaller. A model is proposed based on a strong anisotropy and a small transparency between superconducting layers [ru

  10. Angular dependent torque measurements on CaFe0.88Co0.12AsF

    Science.gov (United States)

    Xiao, H.; Gao, B.; Ma, Y. H.; Li, X. J.; Mu, G.; Hu, T.

    2016-08-01

    Out-of-plane angular dependent torque measurements were performed on CaFe0.88Co0.12AsF (Ca1 1 1 1) single crystals. In the normal state, the torque data shows \\sin 2θ angular dependence and H 2 magnetic field dependence, as a result of paramagnetism. In the mixed state, the torque signal is a combination of the vortex torque and paramagnetic torque, and the former allows the determination of the anisotropy parameter γ. At T   =  11.5 K, γ (11.5 K ≃ 0.5 T c)  =  19.1, which is similar to the result of SmFeAsO0.8F0.2, γ ≃ 23 at T≃ 0.4{{T}\\text{c}} . So the 11 1 1 is more anisotropic compared to 11 and 122 families of iron-based superconductors. This may suggest that the electronic coupling between layers in 1 1 1 1 is less effective than in 11 and 122 families.

  11. Pulsed laser deposition of lysozyme: the dependence on shot numbers and the angular distribution

    DEFF Research Database (Denmark)

    Constantinescu, C.; Matei, A.; Schou, Jørgen

    2013-01-01

    The ejection of molecules from a pressed solid target of lysozyme induced by laser ablation in the UV-regime at a wavelength of 355 nm was investigated. The ablation studies were carried out in vacuum at a laser fluence of 2 J/cm2 for which a significant fraction of proteins remains intact....... This was verified by matrix-assisted laser desorption ionization (MALDI) spectrometry of thin films deposited on silicon substrates. The deposition rate of lysozyme was found to decrease with the number of shots and was correlated with increasing thermal damage of the lysozyme. This was monitored by measurements...... of the optical reflectivity of dry lysozyme. The angular distribution of the mass deposition can be fitted well by Anisimov’s hydrodynamic model. The total deposited yield over the entire hemisphere from direct laser ablation of lysozyme was estimated from this model and found to be three orders of magnitude...

  12. Interface-induced spin Hall magnetoresistance enhancement in Pt-based tri-layer structure.

    Science.gov (United States)

    Huang, Shun-Yu; Li, Hong-Lin; Chong, Cheong-Wei; Chang, Yu-Ying; Lee, Min-Kai; Huang, Jung-Chun-Andrew

    2018-01-08

    In this study, we integrated bilayer structure of covered Pt on nickel zinc ferrite (NZFO) and CoFe/Pt/NZFO tri-layer structure by pulsed laser deposition system for a spin Hall magnetoresistance (SMR) study. In the bilayer structure, the angular-dependent magnetoresistance (MR) results indicate that Pt/NZFO has a well-defined SMR behavior. Moreover, the spin Hall angle and the spin diffusion length, which were 0.0648 and 1.31 nm, respectively, can be fitted by changing the Pt thickness in the longitudinal SMR function. Particularly, the MR ratio of the bilayer structure (Pt/NZFO) has the highest changing ratio (about 0.135%), compared to the prototype structure Pt/Y 3 Fe 5 O 12 (YIG) because the NZFO has higher magnetization. Meanwhile, the tri-layer samples (CoFe/Pt/NZFO) indicate that the MR behavior is related with CoFe thickness as revealed in angular-dependent MR measurement. Additionally, comparison between the tri-layer structure with Pt/NZFO and CoFe/Pt bilayer systems suggests that the SMR ratio can be enhanced by more than 70%, indicating that additional spin current should be injected into Pt layer.

  13. Magnetoresistance effect in a both magnetically and electrically modulated nanostructure

    International Nuclear Information System (INIS)

    Lu, Mao-Wang; Yang, Guo-Jian

    2007-01-01

    We propose a magnetoresistance device in a both magnetically and electrically modulated two-dimensional electron gas, which can be realized experimentally by the deposition, on the top and bottom of a semiconductor heterostructure, of two parallel metallic ferromagnetic strips under an applied voltage. It is shown that a considerable magnetoresistance effect can be achieved in such a device due to the significant transmission difference for electrons through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio depends strongly on the applied voltage to the stripe in the device. These interesting properties may provide an alternative scheme to realize magnetoresistance effect in hybrid ferromagnetic/semiconductor nanosystems, and this system may be used as a voltage-tunable magnetoresistance device

  14. Hopping magnetotransport via nonzero orbital momentum states and organic magnetoresistance.

    Science.gov (United States)

    Alexandrov, Alexandre S; Dediu, Valentin A; Kabanov, Victor V

    2012-05-04

    In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance quadratic in a weak magnetic field, B. We extend the theory of hopping magnetoresistance to states with nonzero orbital momenta. Different from s states, a weak magnetic field expands the electron (hole) wave functions with positive magnetic quantum numbers, m>0, and shrinks the states with negative m in a wide region outside the point defect. This together with a magnetic-field dependence of injection/ionization rates results in a negative weak-field magnetoresistance, which is linear in B when the orbital degeneracy is lifted. The theory provides a possible explanation of a large low-field magnetoresistance in disordered π-conjugated organic materials.

  15. Large magnetoresistance tunnelling through a magnetically modulated nanostructure

    International Nuclear Information System (INIS)

    Lu Maowang; Zhang Lide

    2003-01-01

    Based on a combination of an inhomogeneous magnetic field and a two-dimensional electron gas, we have constructed a giant magnetoresistance nanostructure, which can be realized experimentally by the deposition of two parallel ferromagnetic strips on top of a semiconductor heterostructure. We have theoretically studied the magnetoresistance for electrons tunnelling through this nanostructure. It is shown that there exists a significant transmission difference between the parallel and antiparallel magnetization configurations, which leads to a large magnetoresistance. It is also shown that the magnetoresistance ratio strongly depends not only on incident electronic energy but also on the ferromagnetic strips, and thus a much larger magnetoresistance ratio can be obtained by properly fabricating the ferromagnetic strips in the system

  16. On the magnetoresistance of heavy fermion compounds

    International Nuclear Information System (INIS)

    Lee Chengchung; Chen Chung

    1992-09-01

    Starting from two-conduction-band Anderson lattice model, the magneto-transport properties of heavy fermion systems are studied in the slave boson mean field theory. The residual magnetoresistivity induced by different kinds of impurities is calculated, and the experimentally detected positive maximum structure in the residual magnetoresistance of heavy fermion systems is reproduced. The transition of field-dependent resistivity from nonmonotonic to monotonic behaviour with increasing temperature can be explained naturally by including the charge fluctuation effect. The influence of applied pressure is also investigated. (author). 22 refs, 5 figs

  17. Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

    Science.gov (United States)

    Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

    2017-09-06

    The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

  18. Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals.

    Science.gov (United States)

    Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Pang, Bin; Zhang, Fan; Lin, Da-Jun; Zhou, Jian; Yao, Shu-Hua; Chen, Y B; Zhang, Shan-Tao; Lu, Minghui; Liu, Zhongkai; Chen, Yulin; Chen, Yan-Feng

    2016-05-27

    Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~10(5)%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe1.80) and the highest Mo isovalent substitution samples (W0.7Mo0.3Te2) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe2.

  19. Experimental investigation of the nature of the magnetoresistance effects in Pd-YIG hybrid structures.

    Science.gov (United States)

    Lin, Tao; Tang, Chi; Alyahayaei, Hamad M; Shi, Jing

    2014-07-18

    In bilayers consisting of Pd and yttrium iron garnet (Y(3)Fe(5)O(12) or YIG), we observe vanishingly small room-temperature conventional anisotropic magnetoresistance but large new magnetoresistance that is similar to the spin Hall magnetoresistance previously reported in Pt-YIG bilayers. We report a temperature dependence study of the two magnetoresistance effects in Pt-YIG bilayers. As the temperature is decreased, the new magnetoresistance shows a peak, whereas the anisotropic magnetoresistance effect starts to appear and increases monotonically. We find that the magnetoresistance peak shifts to lower temperatures in thicker Pd samples, a feature characteristic of the spin current effect. The distinct temperature dependence reveals fundamentally different mechanisms responsible for the two effects in such hybrid structures.

  20. Impact-energy dependence of the angular distribution of gold sputtered from a (111) crystal at 100 and 300 K

    International Nuclear Information System (INIS)

    Szymczak, W.; Wittmaack, K.

    1982-01-01

    The angular distribution of gold sputtered from a (111) crystal has been investigated in the (1anti 10) plane. The sample was bombarded at 100 and 300 K by normally incident (mass-analysed) Ne and Xe ions at energies between 0.2 and 30 keV. The sputtered material was collected on hemicylindrical aluminium foils. Absolute differential sputtering yields were determined by medium energy He backscattering. The partial yield into the [001] spot, ΔY 001 , determined by angular intergration, exhibits an energy dependence distinctly different from the random yield. Neither assisted focusons nor the directional ejection mechanism suggested by Lehmann and Sigmund seem to play an important role. Instead ejection involving projectile scattering in the top two monolayers appears to be the dominant mechanism for [001] spot production. This mechanism may also account for an energy-dependent fraction of ΔY 110 . Moreover, spot shape analysis suggests a sizeable focuson contribution to the [110] spot which may account for up to 30% of the total backsputtering yield under Ne impact. The [110] spot width decreases with decreasing temperature and increasing ion energy. Minimum spot widths as low as 11 0 (fwhm) have been observed at 100 K. (orig.)

  1. Asymmetric angular dependence of spin-transfer torques in CoFe/Mg-B-O/CoFe magnetic tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Ling, E-mail: lingtang@zjut.edu.cn; Xu, Zhi-Jun, E-mail: xzj@zjut.edu.cn; Zuo, Xian-Jun; Yang, Ze-Jin, E-mail: zejinyang@zjut.edu.cn [Department of Applied Physics, College of Science, Zhejiang University of Technology, Hangzhou 310023 (China); Gao, Qing-He [College of Science, Northeastern University, Shenyang 110004, China, Information Engineering College, Liaoning University of Traditional Chinese Medicine, Shenyang 110847 (China); Linghu, Rong-Feng, E-mail: linghu@gznu.edu.cn [School of Physics and Electronics Sciences, Guizhou Education University, Guiyang 550018 (China); Guo, Yun-Dong, E-mail: g308yd@126.com [College of Engineering and Technology, Neijiang Normal University, Neijiang 641112 (China)

    2016-04-28

    Using a first-principles noncollinear wave-function-matching method, we studied the spin-transfer torques (STTs) in CoFe/Mg-B-O/CoFe(001) magnetic tunnel junctions (MTJs), where three different types of B-doped MgO in the spacer are considered, including B atoms replacing Mg atoms (Mg{sub 3}BO{sub 4}), B atoms replacing O atoms (Mg{sub 4}BO{sub 3}), and B atoms occupying interstitial positions (Mg{sub 4}BO{sub 4}) in MgO. A strong asymmetric angular dependence of STT can be obtained both in ballistic CoFe/Mg{sub 3}BO{sub 4} and CoFe/Mg{sub 4}BO{sub 4} based MTJs, whereas a nearly symmetric STT curve is observed in the junctions based on CoFe/Mg{sub 4}BO{sub 3}. Furthermore, the asymmetry of the angular dependence of STT can be suppressed significantly by the disorder of B distribution. Such skewness of STTs in the CoFe/Mg-B-O/CoFe MTJs could be attributed to the interfacial resonance states induced by the B diffusion into MgO spacer.

  2. Measurement of Plutonium-240 Angular Momentum Dependent Fission Probabilities Using the Alpha-Alpha' Reaction

    Science.gov (United States)

    Koglin, Johnathon

    8:0MeV and one bin from 4:5MeV to 5:5MeV. Across energy bins the fission probability increases approximately linearly with increasing alpha' scattering angle. At 90° the fission probability increases from 0:069(6) in the lowest energy bin to 0:59(2) in the highest. Likewise, within a single energy bin the fission probability increases with alpha' scattering angle. Within the 6:5MeV and 7:0MeV energy bin, the fission probability increased from 0:41(1) at 60° to 0:81(10) at 140°. Fission fragment angular distributions were also measured integrated over each energy bin. These distributions were fit to theoretical distributions based on combinations of transitional nuclear vibrational and rotational excitations at the saddle point. Contributions from specific K vibrational states were extracted and combined with fission probability measurements to determine the relative fission probability of each state as a function of nuclear excitation energy. Within a given excitation energy bin, it is found that contributions from K states greater than the minimum K = 0 state tend to increase with the increasing alpha' scattering angle. This is attributed to an increase in the transferred angular momentum associated with larger scattering angles. The 90° alpha' scattering angle produced the highest quality results. The relative contributions of K states do not show a discernible trend across the energy spectrum. The energy-binned results confirm existing measurements that place a K = 2 state in the first energy bin with the opening of K = 1 and K = 4 states at energies above 5:5MeV. This experiment represents the first of its kind in which fission probabilities and angular distributions are simultaneously measured at a large number of scattering angles. The acquired fission probability, angular distribution, and K state contribution provide a diverse dataset against which microscopic fission models can be constrained and further the understanding of the properties of the 240Pu

  3. Determination of the angular dependence of the detector matrix Matrix X-evolution of IBA; Determinacion de la dependencia angular del detector matricicial Matrix-X-evolution de IBA

    Energy Technology Data Exchange (ETDEWEB)

    Mateos, J. C.; Luis, F. J.; Sanchez, G.; Herrados, M.

    2011-07-01

    The objective of this work consists in determining the correction for the angular dependence of the detector-Evolution Matrix x matrix (IBA, Germany), when used in the multi cube dummy (IBA, Germany), verification of treatment VMAT IMRT, using the software OP'IMRT (IBA, Germany).

  4. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur; Useinov, Niazbeck Kh H; Tagirov, Lenar R.; Kosel, Jü rgen

    2011-01-01

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can

  5. Further application of angular momentum dependent potentials to proton elastic scattering

    International Nuclear Information System (INIS)

    Kobos, A.M.; Mackintosh, R.S.

    1981-01-01

    We extend our application of the iota-dependent model to a wider range of cases. We include more non-closed shell nuclei and some heavy nuclei as targets, getting better fits than previously found, with no substantial exceptions to the systematic properties of the iota-dependent potential. For one mass sequence we find shell effects, but note that the results would be more certain if more analysing powers data were available. A simple pattern of iota-dependence is a universal feature of proton scattering between 20 and 60 MeV. Since the effect on (p,p') is large the effect of iota-dependence on direct reactions should not be ignored. (author)

  6. Angular dependence of the response of the nanoDot OSLD system for measurements at depth in clinical megavoltage beams

    International Nuclear Information System (INIS)

    Lehmann, Joerg; Dunn, Leon; Lye, Jessica E.; Kenny, John W.; Alves, Andrew D. C.; Cole, Andrew; Asena, Andre; Kron, Tomas; Williams, Ivan M.

    2014-01-01

    Purpose: The purpose of this investigation was to assess the angular dependence of a commercial optically stimulated luminescence dosimeter (OSLD) dosimetry system in MV x-ray beams at depths beyondd max and to find ways to mitigate this dependence for measurements in phantoms. Methods: Two special holders were designed which allow a dosimeter to be rotated around the center of its sensitive volume. The dosimeter's sensitive volume is a disk, 5 mm in diameter and 0.2 mm thick. The first holder rotates the disk in the traditional way. It positions the disk perpendicular to the beam (gantry pointing to the floor) in the initial position (0°). When the holder is rotated the angle of the disk towards the beam increases until the disk is parallel with the beam (“edge on,” 90°). This is referred to as Setup 1. The second holder offers a new, alternative measurement position. It positions the disk parallel to the beam for all angles while rotating around its center (Setup 2). Measurements with five to ten dosimeters per point were carried out for 6 MV at 3 and 10 cm depth. Monte Carlo simulations using GEANT4 were performed to simulate the response of the active detector material for several angles. Detector and housing were simulated in detail based on microCT data and communications with the manufacturer. Various material compositions and an all-water geometry were considered. Results: For the traditional Setup 1 the response of the OSLD dropped on average by 1.4% ± 0.7% (measurement) and 2.1% ± 0.3% (Monte Carlo simulation) for the 90° orientation compared to 0°. Monte Carlo simulations also showed a strong dependence of the effect on the composition of the sensitive layer. Assuming the layer to completely consist of the active material (Al 2 O 3 ) results in a 7% drop in response for 90° compared to 0°. Assuming the layer to be completely water, results in a flat response within the simulation uncertainty of about 1%. For the new Setup 2, measurements and

  7. Angular dependence of the redeposition rates during SiO2 etching in a CF4 plasma

    International Nuclear Information System (INIS)

    Cho, Byeong-Ok; Hwang, Sung-Wook; Lee, Gyeo-Re; Moon, Sang Heup

    2001-01-01

    The angular dependence of the redeposition rates during SiO 2 etching in a CF 4 plasma was studied using three types of Faraday cages located in a transformer coupled plasma etcher. The SiO 2 substrates were fixed on sample holder slopes that have different angles to the cathode. The substrate was subjected to one of three processes depending on the design of the Faraday cage, i.e., redeposition of sputtered particles from the SiO 2 bottom surface (case I), substrate etching by incident ions (case II), or simultaneous etching and redeposition (case III). Both the redeposition and the etch rates were measured by changing the substrate-surface angle and the self-bias voltage in the range of -100 to -800 V. The redeposition-only rates (case I) at -450 and -800 V closely followed the quadratic curve of the angle whereas the rates at -100 V followed the cubic curve, indicating different mechanisms of the bottom SiO 2 etching depending on the energy regimes. The steep increase of the redeposition rate with the angle was attributed to three factors: the substrate-bottom distance, the angular distribution of emitted particles from the bottom surface, and the particle incident angle on the substrate surface. The etch-only rate curves (case II) closely followed the cosine of the surface angle. The etch-rate curve changed into a reverse-S shape when the substrate was subjected to simultaneous etching and redeposition (case III). The net etch rate for case III decreased drastically above 60 deg. , showing a negative value, i.e., a net redeposition, beyond 75 deg. . The drastic decrease in the net etch rate coincided with the steep increase in the redeposition rate, implying the significant effect of redeposition

  8. Angular Dependence of the Ion-Induced Secondary Electron Emission for He+ and Ga+ Beams

    NARCIS (Netherlands)

    Castaldo, V.; Withagen, J.; Hagen, C.; Kruit, P.; Van Veldhoven, E.

    2011-01-01

    In recent years, novel ion sources have been designed and developed that have enabled focused ion beam machines to go beyond their use as nano-fabrication tools. Secondary electrons are usually taken to form images, for their yield is high and strongly dependent on the surface characteristics, in

  9. Comparison of angular dependence of magnetic Barkhausen noise of hysteresis and initial magnetization curve in API5L steel

    Science.gov (United States)

    Chávez-Gonzalez, A. F.; Martínez-Ortiz, P.; Pérez-Benítez, J. A.; Espina-Hernández, J. H.; Caleyo, F.

    2018-01-01

    This work analyzes the differences between the magnetic Barkhausen noise corresponding to the initial magnetization curve and Barkhausen noise corresponding to one branch of the hysteresis loop in API-5L steel. The outcomes show that the Barkhausen noise signal corresponding to the initial magnetization curve and that corresponding to the hysteresis are significantly different. This difference is due to the presence of different processes of the domain wall dynamics in both phenomena. To study the processes present in magnetization dynamics for an applied field of H > 0, research into the angular dependence of a Barkhausen signal using applied field bands has revealed that a Barkhausen signal corresponding to the initial magnetization curve is more suitable than a Barkhausen signal corresponding to the hysteresis loop.

  10. Large magnetoresistance in La-Ca-Mn-O films

    International Nuclear Information System (INIS)

    Chen, L.H.; Jin, S.; Tiefel, T.H.; Ramesh, R.; Schurig, D.

    1995-01-01

    A very large magnetoresistance value in excess of 10 6 % has been obtained at 110 K, H = 6 T in La-Ca-Mn-O thin films epitaxially grown on LaAlO 3 substrates by pulsed laser deposition. The as-deposited film exhibits a substantial magnetoresistance value of 39,000%, which is further improved by heat treatment. A strong dependence of the magnetoresistance on film thickness was observed, with the value reduced by orders of magnitude when the film is made thicker than ∼2,000 angstrom. This behavior is interpreted in terms of lattice strain in the La-Ca-Mn-O films

  11. Magnetoresistance and Hall resistivity of semimetal WTe2 ultrathin flakes.

    Science.gov (United States)

    Luo, Xin; Fang, Chi; Wan, Caihua; Cai, Jialin; Liu, Yong; Han, Xiufeng; Lu, Zhihong; Shi, Wenhua; Xiong, Rui; Zeng, Zhongming

    2017-04-07

    This article reports the characterization of WTe 2 thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the compensation of electrons and holes. By relating experimental results to a classic two-band model, the lower magnetoresistance values in our samples is demonstrated to be caused by decreased carrier mobility. The dependence of mobility on temperature indicates the main role of optical phonon scattering at high temperatures. Our results provide more detailed information on carrier behavior and scattering mechanisms in WTe 2 thin films.

  12. Improved model for the angular dependence of excimer laser ablation rates in polymer materials

    Science.gov (United States)

    Pedder, J. E. A.; Holmes, A. S.; Dyer, P. E.

    2009-10-01

    Measurements of the angle-dependent ablation rates of polymers that have applications in microdevice fabrication are reported. A simple model based on Beer's law, including plume absorption, is shown to give good agreement with the experimental findings for polycarbonate and SU8, ablated using the 193 and 248 nm excimer lasers, respectively. The modeling forms a useful tool for designing masks needed to fabricate complex surface relief by ablation.

  13. Leaked filters for energetic and angular dependence corrections of thermoluminescent response

    International Nuclear Information System (INIS)

    Manzoli, Jose Eduardo; Shammas, Gabriel Issa Jabra; Campos, Vicente de Paulo de

    2007-01-01

    Many thermoluminescent materials has been developed and used for photon personal dosimetry but no one has all desired characteristics alone. These characteristics include robustness, high sensitivity, energy photon independence, large range of photon energy detection, good reproducibility and small fading. The phosphors advantages begin to be more required and its disadvantages have became more apparent, in a global market more and more competitive. Calcium Sulfate Dysprosium doped (CaSO 4 :Dy) and Calcium Fluoride Manganese doped (CaF 2 :Mn) phosphor Thermoluminescent Dosimeters (TLDs) have been used by many laboratories. They are used in environmental and area monitoring, once they present more sensibility than other phosphors, like LiF:Mg. Theirs main disadvantage is the strong energetic dependence response, which must be corrected for theirs application in routine, where the kind of photon radiation is unknown a priori. An interesting way to make this correction is to interject a leaked filter between the beam and the phosphor, where the beam could strike the phosphor at any angle. In order to reduce the energetic dependence on any incidence angle, this work presents experimental and simulation studies on some filter geometries. It was made TL readings and simulations on TL responses to photon irradiations with gamma rays of 60 Co and X-rays of 33; 48 and 118 keV, on many incidence angles from zero to ninety degrees. The results pointed out the best filter thicknesses and widths, in order to optimize the correction of energetic dependence for the studied geometries. (author)

  14. Spin Hall magnetoresistance in Ta/CoFe2O4 nanostructures

    Science.gov (United States)

    Hui, Ya-Juan; Cheng, Wei-Ming; Zhang, Zhao-Bing; Ji, Hong-Kai; Cheng, Xiao-Min; You, Long; Miao, Xiang-Shui

    2016-07-01

    Spin Hall magnetoresistance (SMR) has been investigated in Ta/CoFe2O4 nanostructures grown on different substrates. Spin currents in CoFe2O4 films are electrically detected in adjacent Ta layers owing to inverse spin Hall effects. The sign of the magnetic-field-dependent resistivity signal shows different polarities along different axes, showing different spin-dependent electron transports. A cosinelike curve of the angular dependence signal with opposite polarity is observed in two orthogonal magnetization planes, whereas a basic line is observed in another plane, revealing the spin accumulation phenomenon. The roughness of the CoFe2O4 surface tuned by substrate strains is responsible for the extent of spin accumulations and the strength of the SMR signal in the nanostructures.

  15. THE MASS-DEPENDENCE OF ANGULAR MOMENTUM EVOLUTION IN SUN-LIKE STARS

    International Nuclear Information System (INIS)

    Matt, Sean P.; Baraffe, Isabelle; Chabrier, Gilles; Brun, A. Sacha; Bouvier, Jérôme

    2015-01-01

    To better understand the observed distributions of the rotation rate and magnetic activity of Sun-like and low-mass stars, we derive a physically motivated scaling for the dependence of the stellar wind torque on the Rossby number. The torque also contains an empirically derived scaling with stellar mass (and radius), which provides new insight into the mass-dependence of stellar magnetic and wind properties. We demonstrate that this new formulation explains why the lowest mass stars are observed to maintain rapid rotation for much longer than solar-mass stars, and simultaneously why older populations exhibit a sequence of slowly rotating stars, in which the low-mass stars rotate more slowly than solar-mass stars. The model also reproduces some previously unexplained features in the period-mass diagram for the Kepler field, notably: the particular shape of the ''upper envelope'' of the distribution, suggesting that ∼95% of Kepler field stars with measured rotation periods are younger than ∼4 Gyr; and the shape of the ''lower envelope'', corresponding to the location where stars transition between magnetically saturated and unsaturated regimes

  16. Non-local magnetoresistance in YIG/Pt nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Goennenwein, Sebastian T. B., E-mail: goennenwein@wmi.badw.de; Pernpeintner, Matthias; Gross, Rudolf; Huebl, Hans [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany); Nanosystems Initiative Munich (NIM), Schellingstraße 4, 80799 München (Germany); Physik-Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching (Germany); Schlitz, Richard; Ganzhorn, Kathrin [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany); Physik-Department, Technische Universität München, James-Franck-Str. 1, 85748 Garching (Germany); Althammer, Matthias [Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meißner-Str. 8, 85748 Garching (Germany)

    2015-10-26

    We study the local and non-local magnetoresistance of thin Pt strips deposited onto yttrium iron garnet. The local magnetoresistive response, inferred from the voltage drop measured along one given Pt strip upon current-biasing it, shows the characteristic magnetization orientation dependence of the spin Hall magnetoresistance. We simultaneously also record the non-local voltage appearing along a second, electrically isolated, Pt strip, separated from the current carrying one by a gap of a few 100 nm. The corresponding non-local magnetoresistance exhibits the symmetry expected for a magnon spin accumulation-driven process, confirming the results recently put forward by Cornelissen et al. [“Long-distance transport of magnon spin information in a magnetic insulator at room temperature,” Nat. Phys. (published online 14 September 2015)]. Our magnetotransport data, taken at a series of different temperatures as a function of magnetic field orientation, rotating the externally applied field in three mutually orthogonal planes, show that the mechanisms behind the spin Hall and the non-local magnetoresistance are qualitatively different. In particular, the non-local magnetoresistance vanishes at liquid Helium temperatures, while the spin Hall magnetoresistance prevails.

  17. Effect of crystallinity on the magnetoresistance in perovskite manganese oxide thin films

    International Nuclear Information System (INIS)

    Shreekala, R.; Rajeswari, M.; Ghosh, K.; Goyal, A.; Gu, J.Y.; Kwon, C.; Trajanovic, Z.; Boettcher, T.; Greene, R.L.; Ramesh, R.; Venkatesan, T.

    1997-01-01

    We report our study of the effect of crystallinity on the magnetoresistance in epitaxial and polycrystalline La 2/3 Ba 1/3 MnO 3 and La 2/3 Ca 1/3 MnO 3 thin films. Magnetoresistance in epitaxial films exhibits field dependence and temperature dependence similar to bulk single crystals and sintered bulk ceramics. The polycrystalline films exhibit a markedly different behavior. The magnetoresistance in this case shows either a monotonic increase or saturation with decreasing temperature in contrast to that of epitaxial films in which the magnetoresistance peaks close to the ferromagnetic transition temperature. The field dependence in the polycrystalline films is also remarkably different. At low fields, we observe a sharp drop in resistance followed by a more gradual decrease at higher fields. Our data suggest that in addition to the intrinsic magnetoresistance, grain-boundary transport contributes significantly to the magnetoresistance in polycrystalline films. copyright 1997 American Institute of Physics

  18. The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

    International Nuclear Information System (INIS)

    Zhao Jun-Qing; Ding Meng; Zhang Tian-You; Zhang Ning-Yu; Pang Yan-Tao; Ji Yan-Ju; Chen Ying; Wang Feng-Xiang; Fu Gang

    2012-01-01

    We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors. A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current. The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron—hole pairs, and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field. The field dependence, the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron—hole pairs. The simulated magnetoresistance shows good consistency with the experimental results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. Angular dependence of Jc for YBCO coated conductors at low temperature and very high magnetic fields

    International Nuclear Information System (INIS)

    Xu, A; Jaroszynski, J J; Kametani, F; Chen, Z; Larbalestier, D C; Viouchkov, Y L; Chen, Y; Xie, Y; Selvamanickam, V

    2010-01-01

    We present very high field angle dependent critical current density (J c ) data for three recently obtained YBa 2 Cu 3 O 7-x (YBCO) coated conductors used in the construction of high field solenoids. We find that strongly correlated pins, such as BaZrO 3 (BZO) nanorods, while yielding strong c-axis peaks at 77 K, produce almost no measurable contribution at 4 K. Raising the field from c (θ) at low fields to a marked cusp-like behavior at high fields. Transmission electron micrographs show that all samples contain a high density of stacking faults which strengthen the plane correlated pinning parallel to the ab planes produced by the intrinsic ab-plane pinning of the Cu-O charge reservoir layers.

  20. Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures

    KAUST Repository

    Ortiz Pauyac, Christian; Wang, Xuhui; Chshiev, Mairbek; Manchon, Aurelien

    2013-01-01

    In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.

  1. Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures

    KAUST Repository

    Ortiz Pauyac, Christian

    2013-06-26

    In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.

  2. Large linear magnetoresistivity in strongly inhomogeneous planar and layered systems

    International Nuclear Information System (INIS)

    Bulgadaev, S.A.; Kusmartsev, F.V.

    2005-01-01

    Explicit expressions for magnetoresistance R of planar and layered strongly inhomogeneous two-phase systems are obtained, using exact dual transformation, connecting effective conductivities of in-plane isotropic two-phase systems with and without magnetic field. These expressions allow to describe the magnetoresistance of various inhomogeneous media at arbitrary concentrations x and magnetic fields H. All expressions show large linear magnetoresistance effect with different dependencies on the phase concentrations. The corresponding plots of the x- and H-dependencies of R(x,H) are represented for various values, respectively, of magnetic field and concentrations at some values of inhomogeneity parameter. The obtained results show a remarkable similarity with the existing experimental data on linear magnetoresistance in silver chalcogenides Ag 2+δ Se. A possible physical explanation of this similarity is proposed. It is shown that the random, stripe type, structures of inhomogeneities are the most suitable for a fabrication of magnetic sensors and a storage of information at room temperatures

  3. Magnetoresistance anomaly in DyFeCo thin films

    International Nuclear Information System (INIS)

    Wu, J. C.; Wu, C. S.; Wu, Te-ho; Chen, Bing-Mau; Shieh, Han-Ping D.

    2001-01-01

    Microstructured rare-earth - transition-metal DyFeCo films have been investigated using magnetoresistance and extraordinary Hall-effect measurements. The Hall loops reveal variation of coercive fields depending on the linewidth and the composition of the films. The magnetoresistance curves, with changes up to as high as 1.3%, show positive/negative magnetoresistance peaks centered on the coercive fields depending on the linewidth of the films only. The variation of the coercivity can be attributed to the magnetic moment canting between the Dy and FeCo subcomponents and the existence of the diverged magnetization on the edges, and the anomalous magnetoresistance peaks observed are discussed with the existing theories. [copyright] 2001 American Institute of Physics

  4. Angular-Dependent EDMR Linewidth for Spin-Dependent Space-Charge-Limited Conduction in a Polycrystalline Pentacene

    Directory of Open Access Journals (Sweden)

    Kunito Fukuda

    2017-08-01

    Full Text Available Spin-dependent space-charge-limited carrier conduction in a Schottky barrier diode using polycrystalline p-type π-conjugated molecular pentacene is explored using multiple-frequency electrically detected magnetic resonance (EDMR spectroscopy with a variable-angle configuration. The measured EDMR spectra are decomposed into two components derived, respectively, from mobile and trapped positive polarons. The linewidth of the EDMR signal for the trapped polarons increases with increasing resonance magnetic field for an in-plane configuration where the normal vector of the device substrate is perpendicular to the resonance magnetic field, while it is independent of the field for an out-of-plane configuration. This difference is consistent with the pentacene arrangement on the device substrate, where pentacene molecules exhibit a uniaxial orientation on the out-of-substrate plane. By contrast, the mobile polarons do not show anisotropic behavior with respect to the resonance magnetic field, indicating that the anisotropic effect is averaged out owing to carrier motion. These results suggest that the orientational arrangements of polycrystalline pentacene molecules in a nano thin film play a crucial role in spin-dependent electrical conduction.

  5. Angular-dependent EDMR linewidth for spin-dependent space charge limited conduction in a polycrystalline pentacene

    Science.gov (United States)

    Fukuda, Kunito; Asakawa, Naoki

    2017-08-01

    Spin-dependent space charge limited carrier conduction in a Schottky barrier diode using polycrystalline p-type π-conjugated molecular pentacene is explored using multiple-frequency electrically detected magnetic resonance (EDMR) spectroscopy with a variable-angle configuration. The measured EDMR spectra are decomposed into two components derived respectively from mobile and trapped positive polarons. The linewidth of the EDMR signal for the trapped polarons increases with increasing resonance magnetic field for an in-plane configuration where the normal vector of the device substrate is perpendicular to the resonance magnetic field, while it is independent of the field for an out-of-plane configuration. This difference is consistent with the pentacene arrangement on the device substrate, where pentacene molecules exhibit a uniaxial orientation on the out-of-substrate plane. By contrast, the mobile polarons do not show anisotropic behavior with respect to the resonance magnetic field, indicating that the anisotropic effect is averaged out owing to carrier motion. These results suggest that the orientational arrangements of polycrystalline pentacene molecules in a nano thin film play a crucial role in spin-dependent electrical conduction.

  6. Angular dependence of the irreversible magnetization of YBa2Cu3O7 superconducting thin films

    International Nuclear Information System (INIS)

    Thrane, B.P.; Schlenker, C.; Dumas, J.; Buder, R.

    1996-01-01

    YBa 2 Cu 3 O 7 superconducting thin films have been studied by magnetization measurements in oblique fields up to 0.8 T both at low temperature and at temperatures close to T c . Both components of magnetization parallel and perpendicular to the applied field could be measured with two pairs of crossed detection coils. In all cases the magnetization is found to be perpendicular to the film plane. This is due to the self-field effects related to the thin-film geometry which force the critical currents to circulate along the film plane. At low temperature the properties are found to depend only on the component of the applied magnetic field perpendicular to this plane, as expected in the situation where demagnetizing field effects are dominant. However, at temperatures close to T c the critical currents and therefore the pinning are found to increase when the applied field approaches the film plane. This is attributed to the effect of intrinsic pinning which may be related to the kink structure of the vortices in oblique fields. copyright 1996 The American Physical Society

  7. Angular and magnetic field dependences of critical current in irradiated YBaCuO single crystals

    International Nuclear Information System (INIS)

    Petrusenko, Yu.

    2010-01-01

    The investigation of mechanisms responsible for the current-carrying capability of irradiated high-temperature superconductors (HTSC) was realized. For the purpose, experiments were made to investigate the effect of point defects generated by high-energy electron irradiation on the critical temperature and the critical current in high-Tc superconducting single crystals YBa 2 Cu 3 O 7-x . The transport current density measured in HTSC single crystals YBa 2 Cu 3 O 7-x by the dc-method was found to exceed 80000 A/cm 2 . The experiments have demonstrated a more than 30-fold increase in the critical current density in single crystals irradiated with 2.5 MeV electrons to a dose of 3·10 18 el/cm 2 . Detailed studies were made into the anisotropy of critical current and the dependence of critical current on the external magnetic field strength in irradiated single crystals. A high efficiency of point defects as centers of magnetic vortex pinning in HTSC single crystals was first demonstrated.

  8. Spin Hall magnetoresistance in the non-collinear ferrimagnet GdIG close to the compensation temperature.

    Science.gov (United States)

    Dong, Bo-Wen; Cramer, Joel; Ganzhorn, Kathrin; Yuan, H Y; Guo, Er-Jia; Goennenwein, Sebastian T B; Kläui, Mathias

    2018-01-24

    We investigate the spin Hall magnetoresistance (SMR) in a gadolinium iron garnet (GdIG)/platinum (Pt) heterostructure by angular dependent magnetoresistance measurements. The magnetic structure of the ferromagnetic insulator GdIG is non-collinear near the compensation temperature, while it is collinear far from the compensation temperature. In the collinear regime, the SMR signal in GdIG is consistent with the usual [Formula: see text] relation well established in the collinear magnet yttrium iron garnet, with [Formula: see text] the angle between magnetization and spin Hall spin polarization direction. In the non-collinear regime, both an SMR signal with inverted sign and a more complex angular dependence with four maxima are observed within one sweep cycle. The number of maxima as well as the relative strength of different maxima depend strongly on temperature and field strength. Our results evidence a complex SMR behavior in the non-collinear magnetic regime that goes beyond the conventional formalism developed for collinear magnetic structures.

  9. Oscillations in magnetoresistance and interlayer coupling in magnetic sandwich structures

    International Nuclear Information System (INIS)

    Barnas, J.; Bulka, B.

    1997-01-01

    Kubo formalism is used to calculate the magnetoresistance due to magnetization rotation in a structure consisting two magnetic films separated by nonmagnetic layer. In the approximation of an uniform relaxation time of each layer, the oscillatory term in magnetoresistance corresponds to the oscillation period which depends on the potential barriers at the interfaces. This period is longer than the oscillation period observed in the coupling parameter. (author)

  10. Angular dependent anisotropic terahertz response of vertically aligned multi-walled carbon nanotube arrays with spatial dispersion

    Science.gov (United States)

    Zhou, Yixuan; Yiwen, E.; Xu, Xinlong; Li, Weilong; Wang, Huan; Zhu, Lipeng; Bai, Jintao; Ren, Zhaoyu; Wang, Li

    2016-12-01

    Spatial dispersion effect of aligned carbon nanotubes (CNTs) in the terahertz (THz) region has significance for both theoretical and applied consideration due to the unique intrinsically anisotropic physical properties of CNTs. Herein, we report the angular dependent reflection of p-polarized THz wave from vertically aligned multi-walled CNT arrays in both experiment and theory. The spectra indicate that the reflection depends on the film thickness of vertically aligned CNTs, the incident angle, and the frequency. The calculation model is based on the spatial dispersion effect of aligned CNTs and performed with effective impedance method and the Maxwell-Garnett approximation. The results fit well with the experiment when the thickness of CNT film is thin, which reveals a coherent superposition mechanism of the CNT surface reflection and CNTs/Si interface reflection. For thick CNT films, the CNTs/Si interface response determines the reflection at small incident angles, while the CNTs surface effect dominates at large incident angles. This work investigates the spatial dispersion effect of vertically aligned CNT arrays in the THz region, and paves a way for potential anisotropic THz applications based on CNTs with oblique incidence requirements.

  11. Mixed optical Cherenkov–Bremsstrahlung radiation in vicinity of the Cherenkov cone from relativistic heavy ions: Unusual dependence of the angular distribution width on the radiator thickness

    Energy Technology Data Exchange (ETDEWEB)

    Rozhkova, E.I., E-mail: elenafiks@gmail.com; Pivovarov, Yu.L.

    2016-07-15

    The Cherenkov radiation (ChR) angular distribution is usually described by the Tamm–Frank (TF) theory, which assumes that relativistic charged particle moves uniformly and rectilinearly in the optically transparent radiator. According to the TF theory, the full width at half maximum (FWHM) of the ChR angular distribution inversely depends on the radiator thickness. In the case of relativistic heavy ions (RHI) a slowing-down in the radiator may sufficiently change the angular distribution of optical radiation in vicinity of the Cherenkov cone, since there appears a mixed ChR–Bremsstrahlung radiation. As a result, there occurs a drastic transformation of the FWHM of optical radiation angular distribution in dependence on the radiator thickness: from inversely proportional (TF theory) to the linearly proportional one. In our paper we present the first analysis of this transformation taking account of the gradual velocity decrease of RHI penetrating through a radiator. - Highlights: • Stopping of relativistic heavy ions leads to appearance of a Cherenkov–Bremsstrahlung radiation near the Cherenkov cone. • Mixed Cherenkov–Bremsstrahlung optical radiation FWHM differs from the standard one determined by the Tamm–Frank theory. • The Cherenkov–Bremsstrahlung radiation angular distribution FWHM linearly depends on the radiator thickness.

  12. Tuning of gravity-dependent and gravity-independent vertical angular VOR gain changes by frequency of adaptation.

    Science.gov (United States)

    Yakushin, Sergei B

    2012-06-01

    The gain of the vertical angular vestibulo-ocular reflex (aVOR) was adaptively increased and decreased in a side-down head orientation for 4 h in two cynomolgus monkeys. Adaptation was performed at 0.25, 1, 2, or 4 Hz. The gravity-dependent and -independent gain changes were determined over a range of head orientations from left-side-down to right-side-down at frequencies from 0.25 to 10 Hz, before and after adaptation. Gain changes vs. frequency data were fit with a Gaussian to determine the frequency at which the peak gain change occurred, as well as the tuning width. The frequency at which the peak gravity-dependent gain change occurred was approximately equal to the frequency of adaptation, and the width increased monotonically with increases in the frequency of adaptation. The gravity-independent component was tuned to the adaptive frequency of 0.25 Hz but was uniformly distributed over all frequencies when the adaptation frequency was 1-4 Hz. The amplitude of the gravity-independent gain changes was larger after the aVOR gain decrease than after the gain increase across all tested frequencies. For the aVOR gain decrease, the phase lagged about 4° for frequencies below the adaptation frequency and led for frequencies above the adaptation frequency. For gain increases, the phase relationship as a function of frequency was inverted. This study demonstrates that the previously described dependence of aVOR gain adaptation on frequency is a property of the gravity-dependent component of the aVOR only. The gravity-independent component of the aVOR had a substantial tuning curve only at an adaptation frequency of 0.25 Hz.

  13. Percolative Theory of Organic Magnetoresistance and Fringe-Field Magnetoresistance

    Science.gov (United States)

    Flatté, Michael E.

    2013-03-01

    A recently-introduced percolation theory for spin transport and magnetoresistance in organic semiconductors describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Increases in the spin-flip rate open up ``spin-blocked'' pathways to become viable conduction channels and hence, as the spin-flip rate changes with magnetic field, produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with measurements of the shape and saturation of measured magnetoresistance curves. We find that the threshold hopping distance is analogous to the branching parameter of a phenomenological two-site model, and that the distinction between slow and fast hopping is contingent on the threshold hopping distance. Regimes of slow and fast hopping magnetoresistance are uniquely characterized by their line shapes. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory. Extensions to this theory also describe fringe-field magnetoresistance, which is the influence of fringe magnetic fields from a nearby unsaturated magnetic electrode on the conductance of an organic film. This theory agrees with several key features of the experimental fringe-field magnetoresistance, including the applied fields where the magnetoresistance reaches extrema, the applied field range of large magnetoresistance effects from the fringe fields, and the sign of the effect. All work done in collaboration with N. J. Harmon, and fringe-field magnetoresistance work in collaboration also with F. Macià, F. Wang, M. Wohlgenannt and A. D. Kent. This work was supported by an ARO MURI.

  14. Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires

    OpenAIRE

    Butschkow, Christian H.; Reiger, Elisabeth; Geißler, Stefan; Rudolph, Andreas; Soda, Marcello; Schuh, Dieter; Woltersdorf, Georg; Wegscheider, Werner; Weiss, Dieter

    2011-01-01

    We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in transport can be ascribed to the interplay of the negative magnetoresistance effect and a strong uniaxial anisotropy with the magnetic easy direction pointing along the wire axis. The magnetoresistance can be well described by a quantitative analysis based on the ...

  15. Large linear magnetoresistance from neutral defects in Bi$_2$Se$_3$

    OpenAIRE

    Kumar, Devendra; Lakhani, Archana

    2016-01-01

    The chalcogenide Bi$_2$Se$_3$ can attain the three dimensional (3D) Dirac semimetal state under the influence of strain and microstrain. Here we report the presnece of large linear magnetoresistance in such a Bi$_2$Se$_3$ crystal. The magnetoresistance has quadratic form at low fields which crossovers to linear above 4 T. The temperature dependence of magnetoresistance scales with carrier mobility and the crossover field scales with inverse of mobility. Our analysis suggest that the linear ma...

  16. Magnetoresistance and magnetic ordering in praseodymium and neodymium hexaborides

    International Nuclear Information System (INIS)

    Anisimov, M. A.; Bogach, A. V.; Glushkov, V. V.; Demishev, S. V.; Samarin, N. A.; Filipov, V. B.; Shitsevalova, N. Yu.; Kuznetsov, A. V.; Sluchanko, N. E.

    2009-01-01

    The magnetoresistance Δρ/ρ of single-crystal samples of praseodymium and neodymium hexaborides (PrB 6 and NdB 6 ) has been measured at temperatures ranging from 2 to 20 K in a magnetic field of up to 80 kOe. The results obtained have revealed a crossover of the regime from a small negative magnetoresistance in the paramagnetic state to a large positive magnetoresistive effect in magnetically ordered phases of the PrB 6 and NdB 6 compounds. An analysis of the dependences Δρ(H)/ρ has made it possible to separate three contributions to the magnetoresistance for the compounds under investigation. In addition to the main negative contribution, which is quadratic in the magnetic field (-Δρ/ρ ∝ H 2 ), a linear positive contribution (Δρ/ρ ∝ H) and a nonlinear ferromagnetic contribution have been found. Upon transition to a magnetically ordered state, the linear positive component in the magnetoresistance of the PrB 6 and NdB 6 compounds becomes dominant, whereas the quadratic contribution to the negative magnetoresistance is completely suppressed in the commensurate magnetic phase of these compounds. The presence of several components in the magnetoresistance has been explained by assuming that, in the antiferromagnetic phases of PrB 6 and NdB 6 , ferromagnetic nanoregions (ferrons) are formed in the 5d band in the vicinity of the rareearth ions. The origin of the quadratic contribution to the negative magnetoresistance is interpreted in terms of the Yosida model, which takes into account scattering of conduction electrons by localized magnetic moments of rare-earth ions. Within the approach used, the local magnetic susceptibility χ loc has been estimated. It has been demonstrated that, in the temperature range T N loc for the compounds under investigation can be described with good accuracy by the Curie-Weiss dependence χ loc ∝ (T - Θ p ) -1 .

  17. Angular dependence of the magnetic properties of permalloy and nickel nanowires as a function of their diameters

    Science.gov (United States)

    Raviolo, Sofía; Tejo, Felipe; Bajales, Noelia; Escrig, Juan

    2018-01-01

    In this paper we have compared the angular dependence of the magnetic properties of permalloy (Ni80Fe20) and nickel nanowires by means of micromagnetic simulations. For each material we have chosen two diameters, 40 and 100 nm. Permalloy nanowires with smaller diameters (d = 40 nm) exhibit greater coercivity than nickel nanowires, regardless of the angle at which the external magnetic field is applied. In addition, both Py and Ni nanowires exhibit the same remanence values. However, the nanowires of larger diameters (d = 100 nm) exhibit a more complex behavior, noting that for small angles, nickel nanowires are those that now exhibit a greater coercivity in comparison to those of permalloy. The magnetization reversal modes vary as a function of the angle at which the external field is applied. When the field is applied parallel to the wire axis, it reverts through nucleation and propagation of domain walls, whereas when the field is applied perpendicular to the axis, it reverts by a pseudo-coherent rotation. These results may provide a guide to control the magnetic properties of nanowires for use in potential applications.

  18. Magnetoresistance and noise properties of chevron stretcher detectors for field access bubble domain devices

    Science.gov (United States)

    George, P. K.; Oeffinger, T. R.; Chen, T. T.

    1976-01-01

    Experiments were devised to study the angular variation of the resistance and noise properties of one- and two-level chevron stretcher magnetoresistive detectors for use in field access bubble memory devices. All measurements, made with an electronic system, were performed on glass or garnet samples upon which 1 micron of SiO2 was sputter-deposited, followed by 4000 A of Permalloy for the 28-micron-period devices and 0.8 microns of SiO2, followed by 3000 A of Permalloy for the 20-micron-period devices. The geometrical and drive-state dependence of the zero-state noise were studied, as was its frequency dependence. It is found that both types of detectors operate primarily in the amplitude-shift mode for drive fields of interest and that the presence of a bubble in a detector causes a magnetoresistance change equal to that produced by increasing the in-plane drive field about 8 Oe in the absence of a bubble.

  19. Time-Dependent and Time-Integrated Angular Analysis of B -> phi Ks pi0 and B -> phi K+ pi-

    International Nuclear Information System (INIS)

    Aubert, B.; Bona, M.; Karyotakis, Y; Lees, J.P.; Poireau, V.

    2008-01-01

    We perform a time-dependent and time-integrated angular analysis of the B 0 → ψK*(892) 0 , ψK* 2 (1430 0 ), and ψ(Kπ) S-wave 0 decays with the final sample of about 465 million B(bar B) pairs recorded with the BABAR detector. Overall, twelve parameters are measured for the vector-vector decay, nine parameters for the vector-tensor decay, and three parameters for the vector-scalar decay, including the branching fractions, CP-violation parameters, and parameters sensitive to final state interaction. We use the dependence on the Kπ invariant mass of the interference between the scalar and vector or tensor components to resolve discrete ambiguities of the strong and weak phases. We use the time-evolution of the B → ψK S 0 π 0 channel to extract the CP-violation phase difference Δφ 00 = 0.28 ± 0.42 ± 0.04 between the B and (bar B) decay amplitudes. When the B → ψK ± π # -+# channel is included, the fractions of longitudinal polarization f L of the vector-vector and vector-tensor decay modes are measured to be 0.494 ± 0.034 ± 0.013 and 0.901 -0.058 +0.046 ± 0.037, respectively. This polarization pattern requires the presence of a helicity-plus amplitude in the vector-vector decay from a presently unknown source

  20. Time-Dependent and Time-Integrated Angular Analysis of B -> phi Ks pi0 and B -> phi K+ pi-

    Energy Technology Data Exchange (ETDEWEB)

    Aubert, B; Bona, M; Karyotakis, Y; Lees, J P; Poireau, V

    2008-08-04

    We perform a time-dependent and time-integrated angular analysis of the B{sup 0} {yields} {psi}K*(892){sup 0}, {psi}K*{sub 2}(1430{sup 0}), and {psi}(K{pi}){sub S-wave}{sup 0} decays with the final sample of about 465 million B{bar B} pairs recorded with the BABAR detector. Overall, twelve parameters are measured for the vector-vector decay, nine parameters for the vector-tensor decay, and three parameters for the vector-scalar decay, including the branching fractions, CP-violation parameters, and parameters sensitive to final state interaction. We use the dependence on the K{pi} invariant mass of the interference between the scalar and vector or tensor components to resolve discrete ambiguities of the strong and weak phases. We use the time-evolution of the B {yields} {psi}K{sub S}{sup 0}{pi}{sup 0} channel to extract the CP-violation phase difference {Delta}{phi}{sub 00} = 0.28 {+-} 0.42 {+-} 0.04 between the B and {bar B} decay amplitudes. When the B {yields} {psi}K{sup {+-}}{pi}{sup {-+}} channel is included, the fractions of longitudinal polarization f{sub L} of the vector-vector and vector-tensor decay modes are measured to be 0.494 {+-} 0.034 {+-} 0.013 and 0.901{sub -0.058}{sup +0.046} {+-} 0.037, respectively. This polarization pattern requires the presence of a helicity-plus amplitude in the vector-vector decay from a presently unknown source.

  1. Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy.

    Science.gov (United States)

    Domingo, N; Farokhipoor, S; Santiso, J; Noheda, B; Catalan, G

    2017-08-23

    We measure the magnetotransport properties of individual 71° domain walls in multiferroic BiFeO 3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.

  2. The dependence of bar frequency on galaxy mass, colour, and gas content - and angular resolution - in the local universe

    Science.gov (United States)

    Erwin, Peter

    2018-03-01

    I use distance- and mass-limited subsamples of the Spitzer Survey of Stellar Structure in Galaxies (S4G) to investigate how the presence of bars in spiral galaxies depends on mass, colour, and gas content and whether large, Sloan Digital Sky Survey (SDSS)-based investigations of bar frequencies agree with local data. Bar frequency reaches a maximum of fbar ≈ 0.70 at M⋆ ˜ 109.7M⊙, declining to both lower and higher masses. It is roughly constant over a wide range of colours (g - r ≈ 0.1-0.8) and atomic gas fractions (log (M_{H I}/ M_{\\star }) ≈ -2.5 to 1). Bars are thus as common in blue, gas-rich galaxies are they are in red, gas-poor galaxies. This is in sharp contrast to many SDSS-based studies of z ˜ 0.01-0.1 galaxies, which report fbar increasing strongly to higher masses (from M⋆ ˜ 1010 to 1011M⊙), redder colours, and lower gas fractions. The contradiction can be explained if SDSS-based studies preferentially miss bars in, and underestimate the bar fraction for, lower mass (bluer, gas-rich) galaxies due to poor spatial resolution and the correlation between bar size and stellar mass. Simulations of SDSS-style observations using the S4G galaxies as a parent sample, and assuming that bars below a threshold angular size of twice the point spread function full width at half-maximum cannot be identified, successfully reproduce typical SDSS fbar trends for stellar mass and gas mass ratio. Similar considerations may affect high-redshift studies, especially if bars grow in length over cosmic time; simulations suggest that high-redshift bar fractions may thus be systematically underestimated.

  3. Measurement of angularly dependent spectra of betatron gamma-rays from a laser plasma accelerator with quadrant-sectored range filters

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Jong Ho, E-mail: jhjeon07@ibs.re.kr; Nakajima, Kazuhisa, E-mail: naka115@dia-net.ne.jp; Rhee, Yong Joo; Pathak, Vishwa Bandhu; Cho, Myung Hoon; Shin, Jung Hun; Yoo, Byung Ju; Jo, Sung Ha; Shin, Kang Woo [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 61005 (Korea, Republic of); Kim, Hyung Taek; Sung, Jae Hee; Lee, Seong Ku; Choi, Il Woo [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 61005 (Korea, Republic of); Advanced Photonics Research Institute, GIST, Gwangju 61005 (Korea, Republic of); Hojbota, Calin; Bae, Lee Jin; Jung, Jaehyung; Cho, Min Sang; Cho, Byoung Ick; Nam, Chang Hee [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 61005 (Korea, Republic of); Department of Physics and Photon Science, GIST, Gwangju 61005 (Korea, Republic of)

    2016-07-15

    Measurement of angularly dependent spectra of betatron gamma-rays radiated by GeV electron beams from laser wakefield accelerators (LWFAs) are presented. The angle-resolved spectrum of betatron radiation was deconvolved from the position dependent data measured for a single laser shot with a broadband gamma-ray spectrometer comprising four-quadrant sectored range filters and an unfolding algorithm, based on the Monte Carlo code GEANT4. The unfolded gamma-ray spectra in the photon energy range of 0.1–10 MeV revealed an approximately isotropic angular dependence of the peak photon energy and photon energy-integrated fluence. As expected by the analysis of betatron radiation from LWFAs, the results indicate that unpolarized gamma-rays are emitted by electrons undergoing betatron motion in isotropically distributed orbit planes.

  4. Magnetoresistance of films and strips with the diffuse surface scattering

    International Nuclear Information System (INIS)

    Aronov, A.G.

    1993-08-01

    Magnetoresistance of films in a parallel magnetic field and strips in a perpendicular field is considered. The temperature and magnetic field dependencies of magnetoconductance depend on the time evolution of the correlator of phases. This correlator has different behavior as the function of time: the ergodic behavior at small magnetic fields is changed on the nonergodic one at large magnetic fields in spite of the diffusion electron motion due to a diffuse scattering on boundaries. This leads to unusual temperature and magnetic field dependencies of magnetoresistance. The ergodic hypothesis is not applicable to mesoscopical fluctuations at such a large quasiclassical field. (author). 6 refs, 5 figs

  5. Characterization of MOSFET dosimeter angular dependence in three rotational axes measured free-in-air and in soft-tissue equivalent material

    International Nuclear Information System (INIS)

    Koivisto, Juha; Kiljunen, Timo; Wolff, Jan; Kortesniemi, Mika

    2013-01-01

    When performing dose measurements on an X-ray device with multiple angles of irradiation, it is necessary to take the angular dependence of metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters into account. The objective of this study was to investigate the angular sensitivity dependence of MOSFET dosimeters in three rotational axes measured free-in-air and in soft-tissue equivalent material using dental photon energy. Free-in-air dose measurements were performed with three MOSFET dosimeters attached to a carbon fibre holder. Soft tissue measurements were performed with three MOSFET dosimeters placed in a polymethylmethacrylate (PMMA) phantom. All measurements were made in the isocenter of a dental cone-beam computed tomography (CBCT) scanner using 5° angular increments in the three rotational axes: axial, normal-to-axial and tangent-to-axial. The measurements were referenced to a RADCAL 1015 dosimeter. The angular sensitivity free-in-air (1 SD) was 3.7 ± 0.5 mV/mGy for axial, 3.8 ± 0.6 mV/mGy for normal-to-axial and 3.6 ± 0.6 mV/mGy for tangent-to-axial rotation. The angular sensitivity in the PMMA phantom was 3.1 ± 0.1 mV/mGy for axial, 3.3 ± 0.2 mV/mGy for normal-to-axial and 3.4 ± 0.2 mV/mGy for tangent-to-axial rotation. The angular sensitivity variations are considerably smaller in PMMA due to the smoothing effect of the scattered radiation. The largest decreases from the isotropic response were observed free-in-air at 90° (distal tip) and 270° (wire base) in the normal-to-axial and tangent-to-axial rotations, respectively. MOSFET dosimeters provide us with a versatile dosimetric method for dental radiology. However, due to the observed variation in angular sensitivity, MOSFET dosimeters should always be calibrated in the actual clinical settings for the beam geometry and angular range of the CBCT exposure. (author)

  6. Characterization of MOSFET dosimeter angular dependence in three rotational axes measured free-in-air and in soft-tissue equivalent material.

    Science.gov (United States)

    Koivisto, Juha; Kiljunen, Timo; Wolff, Jan; Kortesniemi, Mika

    2013-09-01

    When performing dose measurements on an X-ray device with multiple angles of irradiation, it is necessary to take the angular dependence of metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters into account. The objective of this study was to investigate the angular sensitivity dependence of MOSFET dosimeters in three rotational axes measured free-in-air and in soft-tissue equivalent material using dental photon energy. Free-in-air dose measurements were performed with three MOSFET dosimeters attached to a carbon fibre holder. Soft tissue measurements were performed with three MOSFET dosimeters placed in a polymethylmethacrylate (PMMA) phantom. All measurements were made in the isocenter of a dental cone-beam computed tomography (CBCT) scanner using 5º angular increments in the three rotational axes: axial, normal-to-axial and tangent-to-axial. The measurements were referenced to a RADCAL 1015 dosimeter. The angular sensitivity free-in-air (1 SD) was 3.7 ± 0.5 mV/mGy for axial, 3.8 ± 0.6 mV/mGy for normal-to-axial and 3.6 ± 0.6 mV/mGy for tangent-to-axial rotation. The angular sensitivity in the PMMA phantom was 3.1 ± 0.1 mV/mGy for axial, 3.3 ± 0.2 mV/mGy for normal-to-axial and 3.4 ± 0.2 mV/mGy for tangent-to-axial rotation. The angular sensitivity variations are considerably smaller in PMMA due to the smoothing effect of the scattered radiation. The largest decreases from the isotropic response were observed free-in-air at 90° (distal tip) and 270° (wire base) in the normal-to-axial and tangent-to-axial rotations, respectively. MOSFET dosimeters provide us with a versatile dosimetric method for dental radiology. However, due to the observed variation in angular sensitivity, MOSFET dosimeters should always be calibrated in the actual clinical settings for the beam geometry and angular range of the CBCT exposure.

  7. Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

    Energy Technology Data Exchange (ETDEWEB)

    Melilli, G.; Madon, B.; Wegrowe, J.-E., E-mail: jean-eric.wegrowe@polytechnique.edu; Clochard, M.-C., E-mail: clochard@cea.fr

    2015-12-15

    The effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW) are investigated at the nanoscale by measuring the change of magnetization (i.e. using the inverse magnetostriction effect). The magnetization state is measured locally by anisotropic magnetoresistance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. The inverse magnetostriction was found to be responsible for a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≈ 10 K. In other terms, the variation of the magnetization due to the stress compensates the effect of external magnetic field applied on the NW resistance. The induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification could be attributed to three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress–strain law. We investigate here the role of these different contributions using track-etched polymer membranes irradiated at various angles (α{sub irrad}) leading to, after electrodeposition, embedded Ni NWs of different orientations.

  8. Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

    Science.gov (United States)

    Melilli, G.; Madon, B.; Wegrowe, J.-E.; Clochard, M.-C.

    2015-12-01

    The effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW) are investigated at the nanoscale by measuring the change of magnetization (i.e. using the inverse magnetostriction effect). The magnetization state is measured locally by anisotropic magnetoresistance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. The inverse magnetostriction was found to be responsible for a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≈ 10 K. In other terms, the variation of the magnetization due to the stress compensates the effect of external magnetic field applied on the NW resistance. The induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification could be attributed to three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress-strain law. We investigate here the role of these different contributions using track-etched polymer membranes irradiated at various angles (αirrad) leading to, after electrodeposition, embedded Ni NWs of different orientations.

  9. Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

    International Nuclear Information System (INIS)

    Melilli, G.; Madon, B.; Wegrowe, J.-E.; Clochard, M.-C.

    2015-01-01

    The effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW) are investigated at the nanoscale by measuring the change of magnetization (i.e. using the inverse magnetostriction effect). The magnetization state is measured locally by anisotropic magnetoresistance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. The inverse magnetostriction was found to be responsible for a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≈ 10 K. In other terms, the variation of the magnetization due to the stress compensates the effect of external magnetic field applied on the NW resistance. The induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification could be attributed to three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress–strain law. We investigate here the role of these different contributions using track-etched polymer membranes irradiated at various angles (α irrad ) leading to, after electrodeposition, embedded Ni NWs of different orientations.

  10. Current perpendicular to plane giant magnetoresistance and tunneling magnetoresistance treated with unified model

    NARCIS (Netherlands)

    Jonkers, PAE

    2002-01-01

    The conceptual similarity between current perpendicular to plane giant magnetoresistance (CPP-GMR) and tunneling magnetoresistance (TMR) is exploited by utilizing a unified single-particle model accounting for both types of magnetoresistance. By defining structures composed of ferromagnetic,

  11. Tuning giant magnetoresistance in rolled-up Co-Cu nanomembranes by strain engineering.

    Science.gov (United States)

    Müller, Christian; Bof Bufon, Carlos Cesar; Makarov, Denys; Fernandez-Outon, Luis E; Macedo, Waldemar A A; Schmidt, Oliver G; Mosca, Dante Homero

    2012-11-21

    Compact rolled-up Co-Cu nanomembranes of high quality with different numbers of windings are realized by strain engineering. A profound analysis of magnetoresistance (MR) is performed for tubes with a single winding and a varied number of Co-Cu bilayers in the stack. Rolled-up nanomembranes with up to 12 Co-Cu bilayers are successfully fabricated by tailoring the strain state of the Cr bottom layer. By carrying out an angular dependent study, we ruled out the contribution from anisotropic MR and confirm that rolled-up Co-Cu multilayers exhibit giant magnetoresistance (GMR). No significant difference of MR is found for a single wound tube compared with planar devices. In contrast, MR in tubes with multiple windings is increased at low deposition rates of the Cr bottom layer, whereas the effect is not observable at higher rates, suggesting that interface roughness plays an important role in determining the GMR effect of the rolled-up nanomembranes. Furthermore, besides a linear increase of the MR with the number of windings, the self-rolling of nanomembranes substantially reduces the device footprint area.

  12. Role of muscle pulleys in producing eye position-dependence in the angular vestibuloocular reflex: a model-based study

    Science.gov (United States)

    Thurtell, M. J.; Kunin, M.; Raphan, T.; Wall, C. C. (Principal Investigator)

    2000-01-01

    the roll gain of the angular vestibuloocular reflex was modified during the initial period of the response, while pulley coefficient was maintained at 0.5. Hence a roll gain modification allows stabilization of the retinal image without requiring a change in the pulley effect. Our results therefore indicate that the eye position-dependent velocity axis tilts could arise due to the effects of the pulleys and that a roll gain modification in the central vestibular structures may be responsible for countering the pulley effect.

  13. Angular Accelerating White Light

    CSIR Research Space (South Africa)

    Dudley, Angela L

    2015-08-01

    Full Text Available wavelength dependence. By digitally simulating free-space propagation on the SLM, The authors compare the effects of real and digital propagation on the angular rotation rates of the resulting optical fields for various wavelengths. The development...

  14. Angular dependence of the sup(6)Li(πsup(+),sup(3)He)sup(3)He reaction

    International Nuclear Information System (INIS)

    McParland, B.J.; Auld, E.G.; Couvert, P.

    1985-02-01

    Angular distributions of the differential cross sections for the pionic fission sup(6)Li(πsup(+),sup(3)He)sup(3)He have been measured at pion energies of 60 and 80 MeV. The differential cross section is found to decrease monotonically with cossup(2)thetasup(*) and is compared with a theoretical prediction

  15. Radiative characteristics of a thin solid fuel at discrete levels of pyrolysis: Angular, spectral, and thermal dependencies

    Science.gov (United States)

    Pettegrew, Richard Dale

    Numerical models of solid fuel combustion rely on accurate radiative property values to properly account for radiative heat transfer to and from the surface. The spectral properties can change significantly over the temperature range from ambient to burnout temperature. The variations of these properties are due to mass loss (as the sample pyrolyzes), chemical changes, and surface finish changes. In addition, band-integrated properties can vary due to the shift in the peak of the Planck curve as the temperature increases, which results in differing weightings of the spectral values. These effects were quantified for a thin cellulosic fuel commonly used in microgravity combustion studies (KimWipesRTM). Pyrolytic effects were simulated by heat-treating the samples in a constant temperature oven for varying times. Spectral data was acquired using a Fourier Transform Infrared (FTIR) spectrometer, along with an integrating sphere. Data was acquired at different incidence angles by mounting the samples at different angles inside the sphere. Comparisons of samples of similar area density created using different heat-treatment regimens showed that thermal history of the samples was irrelevant in virtually all spectral regions, with overall results correlating well with changes in area density. Spectral, angular, and thermal dependencies were determined for a representative data set, showing that the spectral absorptance decreases as the temperature increases, and decreases as the incidence angle varies from normal. Changes in absorptance are primarily offset by corresponding changes in transmittances, with reflectance values shown to be low over the tested spectral region of 2.50 mum to 24.93 mum. Band-integrated values were calculated as a function of temperature for the entire tested spectral region, as well as limited bands relevant for thermal imaging applications. This data was used to demonstrate the significant error that is likely if incorrect emittance values are

  16. Anomalous magnetoresistance in Fibonacci multilayers.

    Energy Technology Data Exchange (ETDEWEB)

    Machado, L. D.; Bezerra, C. G.; Correa, M. A.; Chesman, C.; Pearson, J. E.; Hoffmann, A. (Materials Science Division); (Universidade Federal do Rio Grande do Norte)

    2012-01-01

    We theoretically investigated magnetoresistance curves in quasiperiodic magnetic multilayers for two different growth directions, namely, [110] and [100]. We considered identical ferromagnetic layers separated by nonmagnetic layers with two different thicknesses chosen based on the Fibonacci sequence. Using parameters for Fe/Cr multilayers, four terms were included in our description of the magnetic energy: Zeeman, cubic anisotropy, bilinear coupling, and biquadratic coupling. The minimum energy was determined by the gradient method and the equilibrium magnetization directions found were used to calculate magnetoresistance curves. By choosing spacers with a thickness such that biquadratic coupling is stronger than bilinear coupling, unusual behaviors for the magnetoresistance were observed: (i) for the [110] case, there is a different behavior for structures based on even and odd Fibonacci generations, and, more interesting, (ii) for the [100] case, we found magnetic field ranges for which the magnetoresistance increases with magnetic field.

  17. Resistance and magnetoresistance of annealed amorphous carbon films containing Fe3C nanograins

    International Nuclear Information System (INIS)

    Lee Yuhua; Han Taichun; Wur, C.-S.

    2004-01-01

    The temperature-dependent resistance and the field-dependent magnetoresistance were measured for films annealed at temperatures from 250 deg. C to 550 deg. C for a period of 60 min. Results of temperature-dependent resistance show electrical tunneling conductance in the films annealed at T a =250 deg. C and 350 deg. C only. The largest magnetoresistance ratio (MR) of 23% at temperature T=2 K was observed for T a =350 deg. C. The variations of both the temperature dependence of resistance and the magnetoresistance with the annealing temperature are discussed

  18. Angular dependence of plasma parameters and film properties during high power impulse magnetron sputtering for deposition of Ti and TiO.sub.2./sub. layers

    Czech Academy of Sciences Publication Activity Database

    Hippler, R.; Hubička, Zdeněk; Čada, Martin; Kšírová, Petra; Wulff, H.; Helm, C.A.; Straňák, V.

    2017-01-01

    Roč. 121, č. 17 (2017), s. 1-9, č. článku 171906. ISSN 0021-8979 R&D Projects: GA ČR(CZ) GA15-00863S Institutional support: RVO:68378271 Keywords : HiPIMS * Langmuir probe * titanium dioxide * angular dependence * XRD * SEM Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 2.068, year: 2016

  19. Anisotropy of magnetoresistance on trapping magnetic fields in granular HTSC

    CERN Document Server

    Sukhanov, A A

    2003-01-01

    The features of magnetoresistance in Bi (Pb)-HTSC ceramics with the magnetic fields trapped are investigated. It is found that on trapping magnetic flux the magnetoresistance in granular HTSC becomes anisotropic. Moreover, for magnetic fields H parallel and currents perpendicular to field H sub i which induces the trapping the magnetoresistance field dependence DELTA R(H) is nonmonotonic and the magnetoresistance is negative for small fields H < Hinv. The effect of trapped field and transport current and their orientations on the dependence DELTA R(H) is investigated. In particular, it is found that the field of magnetoresistance sign inversion Hinv almost linearly grows with increase of the effective trapped magnetic fields. Hinv decreases down to zero as the angle between fields H and H sub i increases up to pi/2 and slightly decreases with increasing transport current. The results are treated in terms of the model of magnetic flux trapping in superconducting grains or 'loops' embedded in a matrix of wea...

  20. Measurement of the Energy-Dependent Angular Response of the ARES Detector System and Application to Aerial Imaging

    Science.gov (United States)

    Joshi, Tenzing H. Y.; Quiter, Brian J.; Maltz, Jonathan S.; Bandstra, Mark S.; Haefner, Andrew; Eikmeier, Nicole; Wagner, Eric; Luke, Tanushree; Malchow, Russell; McCall, Karen

    2017-07-01

    The Airborne Radiological Enhanced-sensor System (ARES) includes a prototype helicopter-borne CsI(Na) detector array that has been developed as part of the DHS Domestic Nuclear Detection Office Advanced Technology Demonstration. The detector system geometry comprises two pairs of 23-detector arrays designed to function as active masks, providing additional angular resolution of measured gamma rays in the roll dimension. Experimental measurements, using five radioisotopes (137Cs, 60Co, 241Am, 131I, and 99mTc), were performed to map the detector response in both roll and pitch dimensions. This paper describes the acquisition and analysis of these characterization measurements, calculation of the angular response of the ARES system, and how this response function is used to improve aerial detection and localization of radiological and nuclear threat sources.

  1. Vibration-dependent angular anisotropy in the photodetachment of O{sub 2}{sup -}, viewed with velocity-map imaging

    Energy Technology Data Exchange (ETDEWEB)

    Gibson, S T; Cavanagh, S J; Lewis, B R [Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Gascooke, J R [School of Chemistry, Physics and Earth Sciences, Flinders University, SA 5001 (Australia); Mabbs, R [Department of Chemistry, Washington University, St Louis MO 63930-4899 (United States); Sanov, A, E-mail: Stephen.Gibson@anu.edu.a, E-mail: Steven.Cavanagh@anu.edu.a [Department of Chemistry, University of Arizona, Tucson AZ 85721-0041 (United States)

    2009-11-01

    The photodetachment spectrum of O{sub 2}{sup -} has been measured at a number of wavelengths using velocity-map imaging. The electron kinetic-energy resolution (< 5 meV) is sufficient to resolve the anion fine-structure splitting, vibrational and electronic structure. The electron angular distribution varies with the electron kinetic-energy, with a different behaviour for each vibronic band.

  2. Perpendicular magnetic anisotropy at the interface between ultrathin Fe film and MgO studied by angular-dependent x-ray magnetic circular dichroism

    Energy Technology Data Exchange (ETDEWEB)

    Okabayashi, J. [Research Center for Spectrochemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan); Koo, J. W.; Mitani, S. [National Institute for Materials Science (NIMS), Tsukuba 305-0047 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8577 (Japan); Sukegawa, H. [National Institute for Materials Science (NIMS), Tsukuba 305-0047 (Japan); Takagi, Y.; Yokoyama, T. [Institute of Molecular Science, Okazaki, Aichi 444-8585 (Japan)

    2014-09-22

    Interface perpendicular magnetic anisotropy (PMA) in ultrathin Fe/MgO (001) has been investigated using angular-dependent x-ray magnetic circular dichroism (XMCD). We found that anisotropic orbital magnetic moments deduced from the analysis of XMCD contribute to the large PMA energies, whose values depend on the annealing temperature. The large PMA energies determined from magnetization measurements are related to those estimated from the XMCD and the anisotropic orbital magnetic moments through the spin-orbit interaction. The enhancement of anisotropic orbital magnetic moments can be explained mainly by the hybridization between the Fe 3d{sub z}{sup 2} and O 2p{sub z} states.

  3. Anisotropic magnetoresistance in a Fermi glass

    International Nuclear Information System (INIS)

    Ovadyahu, Z.; Physics Department, Ben-Gurion University of the Negev, Beer-Sheva, Israel 84120)

    1986-01-01

    Insulating thin films of indium oxide exhibit negative, anisotropic magnetoresistance. The systematics of these results imply that the magnetoresistance mechanism may give different weight to the distribution of the localization lengths than that given by the hopping conductivity

  4. Flat magnetic exchange springs as mechanism for additional magnetoresistance in magnetic nanoisland arrays

    Energy Technology Data Exchange (ETDEWEB)

    Boltaev, A.P.; Pudonin, F.A. [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospekt 53, 119991 Moscow (Russian Federation); Sherstnev, I.A., E-mail: sherstnev@lebedev.ru [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospekt 53, 119991 Moscow (Russian Federation); Egorov, D.A. [National Research Nuclear University MEPhI, Kashirskoe shosse 31, 115409 Moscow (Russian Federation); Kozmin, A.M. [National Research University of Electronic Technology, Shokin Square, 1, Zelenograd, 124482 Moscow (Russian Federation)

    2017-04-15

    Process of magnetization and magnetoresistance have been studied in nanoisland bilayer systems of FeNi-Co. Hysteresis loops show characteristic features (steps) most clearly observed in certain orientations of the sample in a magnetic field. To explain these features the concept of flat magnetic exchange spring has been introduced for nanoisland bilayers. It has been proposed that additional magnetoresistance can be the result of spin-dependent scattering of electrons in the area of flat magnetic exchange spring. Magnetoresistance studies of bilayer systems has shown that additional magnetoresistance occurs at the same magnetic fields as steps on hysteresis loops. - Highlights: • Metallic FeNi-Co bilayers are studied. • FeNi and Co layers magnetize independently. • Concept of flat spin spring is proposed. • Additional magnetoresistance occurs in intermediate magnetic fields.

  5. Flat magnetic exchange springs as mechanism for additional magnetoresistance in magnetic nanoisland arrays

    International Nuclear Information System (INIS)

    Boltaev, A.P.; Pudonin, F.A.; Sherstnev, I.A.; Egorov, D.A.; Kozmin, A.M.

    2017-01-01

    Process of magnetization and magnetoresistance have been studied in nanoisland bilayer systems of FeNi-Co. Hysteresis loops show characteristic features (steps) most clearly observed in certain orientations of the sample in a magnetic field. To explain these features the concept of flat magnetic exchange spring has been introduced for nanoisland bilayers. It has been proposed that additional magnetoresistance can be the result of spin-dependent scattering of electrons in the area of flat magnetic exchange spring. Magnetoresistance studies of bilayer systems has shown that additional magnetoresistance occurs at the same magnetic fields as steps on hysteresis loops. - Highlights: • Metallic FeNi-Co bilayers are studied. • FeNi and Co layers magnetize independently. • Concept of flat spin spring is proposed. • Additional magnetoresistance occurs in intermediate magnetic fields.

  6. 3000% high-field magnetoresistance in super-lattices of CoFe nanoparticles

    International Nuclear Information System (INIS)

    Tan, Reasmey P.; Carrey, Julian; Respaud, Marc; Desvaux, Celine; Renaud, Philippe; Chaudret, Bruno

    2008-01-01

    We report on magnetotransport measurements on millimeter-large super-lattices of CoFe nanoparticles surrounded by an organic layer. Electrical properties are typical of Coulomb blockade in three-dimensional arrays of nanoparticles. A large high-field magnetoresistance, reaching up to 3000%, is measured between 1.8 and 10 K. This exceeds by two orders of magnitude magnetoresistance values generally measured in arrays of 3d transition metal ferromagnetic nanoparticles. The magnetoresistance amplitude scales with the magnetic field/temperature ratio and displays an unusual exponential dependency with the applied voltage. The magnetoresistance abruptly disappears below 1.8 K. We propose that the magnetoresistance is due to some individual paramagnetic moments localized between the metallic cores of the nanoparticles, the origin of which is discussed

  7. Anomalous rf magnetoresistance in copper at 4/degree/K

    International Nuclear Information System (INIS)

    Halama, H.J.; Prodell, A.G.; Rogers, J.T.

    1988-03-01

    We have measured the effect of a magnetic field on the surface resistance of polycrystalline Cu at f = 1.2 GHz and at 4.4/degree/K; under these conditions the surface resistance is well into the anomalous skin effect regime but has not reached its limiting value. We find that the transverse and longitudinal magnetoresistance are an order of magnitude smaller than the DC magnetoresistance and depend quadratically on the field. At low fields we observe a decrease in surface resistance with increasing field which can be interpreted as a size effect of the TF surface current. 17 refs., 4 figs., 1 tab

  8. Spin Hall magnetoresistance in antiferromagnet/normal metal bilayers

    KAUST Repository

    Manchon, Aurelien

    2017-01-01

    We investigate the emergence of spin Hall magnetoresistance in a magnetic bilayer composed of a normal metal adjacent to an antiferromagnet. Based on a recently derived drift diffusion equation, we show that the resistance of the bilayer depends on the relative angle between the direction transverse to the current flow and the Néel order parameter. While this effect presents striking similarities with the spin Hall magnetoresistance recently reported in ferromagnetic bilayers, its physical origin is attributed to the anisotropic spin relaxation of itinerant spins in the antiferromagnet.

  9. Linear negative magnetoresistance in two-dimensional Lorentz gases

    Science.gov (United States)

    Schluck, J.; Hund, M.; Heckenthaler, T.; Heinzel, T.; Siboni, N. H.; Horbach, J.; Pierz, K.; Schumacher, H. W.; Kazazis, D.; Gennser, U.; Mailly, D.

    2018-03-01

    Two-dimensional Lorentz gases formed by obstacles in the shape of circles, squares, and retroreflectors are reported to show a pronounced linear negative magnetoresistance at small magnetic fields. For circular obstacles at low number densities, our results agree with the predictions of a model based on classical retroreflection. In extension to the existing theoretical models, we find that the normalized magnetoresistance slope depends on the obstacle shape and increases as the number density of the obstacles is increased. The peaks are furthermore suppressed by in-plane magnetic fields as well as by elevated temperatures. These results suggest that classical retroreflection can form a significant contribution to the magnetoresistivity of two-dimensional Lorentz gases, while contributions from weak localization cannot be excluded, in particular for large obstacle densities.

  10. SU-E-T-391: Assessment and Elimination of the Angular Dependence of the Response of the NanoDot OSLD System in MV Beams

    International Nuclear Information System (INIS)

    Lehmann, J; Dunn, L; Lye, J; Kenny, J W; Alves, A D C; Cole, A; Asena, A; Kron, T; Williams, I M

    2014-01-01

    Purpose: Assess the angular dependence of the nanoDot OSLD system in MV X-ray beams at depths and mitigate this dependence for measurements in phantoms. Methods: Measurements for 6 MV photons at 3 cm and 10 cm depth and Monte Carlo simulations were performed. Two special holders were designed which allow a nanoDot dosimeter to be rotated around the center of its sensitive volume (5 mm diameter disk). The first holder positions the dosimeter disk perpendicular to the beam (en-face). It then rotates until the disk is parallel with the beam (edge on). This is referred to as Setup 1. The second holder positions the disk parallel to the beam (edge on) for all angles (Setup 2). Monte Carlo simulations using GEANT4 considered detector and housing in detail based on microCT data. Results: An average drop in response by 1.4±0.7% (measurement) and 2.1±0.3% (Monte Carlo) for the 90° orientation compared to 0° was found for Setup 1. Monte Carlo simulations also showed a strong dependence of the effect on the composition of the sensitive layer. Assuming 100% active material (Al??O??) results in a 7% drop in response for 90° compared to 0°. Assuming the layer to be completely water, results in a flat response (within simulation uncertainty of about 1%). For Setup 2, measurements and Monte Carlo simulations found the angular dependence of the dosimeter to be below 1% and within the measurement uncertainty. Conclusion: The nanoDot dosimeter system exhibits a small angular dependence off approximately 2%. Changing the orientation of the dosimeter so that a coplanar beam arrangement always hits the detector material edge on reduces the angular dependence to within the measurement uncertainty of about 1%. This makes the dosimeter more attractive for phantom based clinical measurements and audits with multiple coplanar beams. The Australian Clinical Dosimetry Service is a joint initiative between the Australian Department of Health and the Australian Radiation Protection and

  11. Determination of the angular dependence of Hc2 in high Tc single crystals by a microwave technique

    OpenAIRE

    Shaltiel, David; Bill, Hans; Grayevsky, A.; Junod, Alain; Lovy, Dominique; Sadowski, S.; Walker, Eric

    1991-01-01

    It is shown that using an ESR spectrometer with magnetic field modulation and sweeping the temperature across Tc (at a constant and a very low magnetic field), is equivalent to temperature modulation. The signal intensity obtained when crossing Tc is proportional to 1/( delta Hc2/ delta T) at T=Tc. Using the WHH relation Hc2(T=0)=0.7 Tc( delta Hc2/ delta T)T=Tc enabled the measurement of the relative angular variation of Hc2 in single crystals of YBaCuO with Tc approximately 85 K. The data fi...

  12. Large linear magnetoresistance in topological crystalline insulator Pb_0_._6Sn_0_._4Te

    International Nuclear Information System (INIS)

    Roychowdhury, Subhajit; Ghara, Somnath; Guin, Satya N.; Sundaresan, A.; Biswas, Kanishka

    2016-01-01

    Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb_0_._6Sn_0_._4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as ∼200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb_0_._6Sn_0_._4Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor. - Graphical abstract: Large non-saturating linear magnetoresistance has been evidenced in topological crystalline insulator, Pb_0_._6Sn_0_._4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. - Highlights: • Large non-saturating linear magnetoresistance was achieved in the topological crystalline insulator, Pb_0_._6Sn_0_._4Te. • Highest magnetoresistance value as high as ~200% was achieved at 3 K at magnetic field of 9 T. • Linear magnetoresistance in Pb_0_._6Sn_0_._4Te is mainly governed by the spatial fluctuation of the carrier mobility.

  13. Angular dependence of Kβ/Kα intensity ratios of thick Ti and Cu pure elements from 10-25 keV electron bombardment

    Science.gov (United States)

    Singh, B.; Kumar, S.; Prajapati, S.; Singh, B. K.; Llovet, X.; Shanker, R.

    2018-02-01

    Measurements yielding the first results on angular dependence of Kβ/Kα X-ray intensity ratios of thick Ti (Z = 22) and Cu (Z = 29) targets induced by 10-25 keV electrons are presented. The measurements were done by rotating the target surface around the electron beam direction in the angular detection range 105° ≤ θ ≤ 165° in the reflection mode using an energy dispersive Si PIN photodiode detector. The measured angular dependence of Kβ/Kα intensity ratios is shown to be almost isotropic for Ti and Cu targets for the range of detection angles, 105° ≤ θ ≤ 150°, while there is a very weak increase beyond 150° for both targets. No dependence of Kβ/Kα intensity ratios on impact energy is observed; while on average, the value of the Kβ/Kα X-ray intensity ratio for Cu is larger by about 8% than that for Ti, which indicates a weak Z-dependence of the target. The experimental results are compared with those obtained from PENELOPE MC calculations and from the Evaluated Atomic Data Library (EADL) ratios. These results on Kβ/Kα X-ray intensity ratios are found to be in reasonable agreement in the detection angle range 105° ≤ θ ≤ 150° to within uncertainties, whereas the simulation and experimental results show a very slight increase in the intensity ratio with θ as the latter attains higher values. The results presented in this work provide a direct check on the accuracy of PENELOPE at oblique incidence angles for which there has been a lack of measurements in the literature until now.

  14. A novel approach for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of gallium and mercury metals

    International Nuclear Information System (INIS)

    Ogita, M.; Nakao, M.; Singh, C.D.; Mogi, I.; Awaji, S.

    2004-01-01

    An AC-DC method has been proposed for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of Ga and Hg metals. In low magnetic field Hall signal in solid state is proportional to magnetic field B, while in liquid state Hall signal is affected by magnetoresistance effect. It has been found that magnetoresistance has a B 2 dependence on magnetic field and affects the Hall signal. In high magnetic field, the Hall effect in liquid state is affected by a very large magnetoresistance effect compared in solid state. The magnetoresistance effect in liquid state is higher than solid state

  15. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  16. Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires

    International Nuclear Information System (INIS)

    Liang, J.; Wang, J.; Cooley, B. J.; Rench, D. W.; Samarth, N.; Paul, A.; Dellas, N. S.; Mohney, S. E.; Engel-Herbert, R.

    2012-01-01

    We report four probe measurements of the low field magnetoresistance (MR) in single core/shell GaAs/MnAs nanowires (NWs) synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresistance that track the field-dependent magnetization. A comparison with micromagnetic simulations reveals that the principal characteristics of the magnetoresistance data can be unambiguously attributed to the nanowire segments with a zinc blende GaAs core. The direct correlation between magnetoresistance, magnetization, and crystal structure provides a powerful means of characterizing individual hybrid ferromagnet/semiconductor nanostructures.

  17. Flavour-tagged time-dependent angular analysis of the $B_s^0 \\rightarrow J/\\psi(\\mu^+\\mu^-)\\Phi(K^+K^-)$ decay with the ATLAS detector

    CERN Document Server

    Jakoubek, Tomas; The ATLAS collaboration

    2015-01-01

    We present a flavour tagged time dependent angular analysis of the $B_s \\rightarrow J/\\psi\\phi$ decay, using 4.9 fb$^{−1}$ of integrated luminosity collected by the ATLAS detector from 7 TeV proton-proton collisions recorded in 2011. CP violation in this channel is described by a weak phase $\\phi_s$, which is sensitive to new physics contributions. The measured value is $\\phi_s$ = 0.12 $\\pm$ 0.25 (stat.) $\\pm$ 0.05 (syst.) rad, which is in good agreement with Standard Model expectations. Also other measured parameters are consistent with the world average.

  18. Angular dependence of the upper critical field in Bi sub 2 Sr sub 2 CuO sub 6 sub + subdelta

    CERN Document Server

    Vedeneev, S I

    2002-01-01

    The angular dependence of the upper critical field has been investigated in a wide range of temperatures in very high-quality Bi sub 2 Sr sub 2 CuO sub 6 sub + subdelta single crystals with critical temperature approx = 9 K in magnetic fields up to 28 T. Although the typical value of the normal state resistivity ratio approx = 10 sup 4 , the anisotropy ratio of the upper critical fields is much smaller. A model is proposed based on a strong anisotropy and a small transparency between superconducting layers

  19. Thickness and angular dependent magnetic anisotropy of La0.67Sr0.33MnO3 thin films by Vectorial Magneto Optical Kerr Magnetometry

    Science.gov (United States)

    Chaluvadi, S. K.; Perna, P.; Ajejas, F.; Camarero, J.; Pautrat, A.; Flament, S.; Méchin, L.

    2017-10-01

    We investigate the in-plane magnetic anisotropy in La0.67Sr0.33MnO3 thin films grown on SrTiO3 (001) substrate using angular dependent room temperature Vectorial Magneto-Optical Kerr Magnetometry. The experimental data reveals that the magnetic anisotropy symmetry landscape significantly changes depending upon the strain and thickness. At low film thickness (12 and 25 nm) the dominant uniaxial anisotropy is due to interface effects, step edges due to mis-cut angle of SrTiO3 substrate. At intermediate thickness, the magnetic anisotropy presents a competition between magnetocrystalline (biaxial) and substrate step induced (uniaxial) anisotropy. Depending upon their relative strengths, a profound biaxial or uniaxial or mixed anisotropy is favoured. Above the critical thickness, magnetocrystalline anisotropy dominates all other effects and shows a biaxial anisotropy.

  20. Electrical properties and granular magnetoresistance in nanomanganite

    Directory of Open Access Journals (Sweden)

    َAli Rostamnejadi

    2017-05-01

    Full Text Available In this research single phaseLa0.7(Sr 1-xBax0.3MnO3(x =0, 0.1 , 0.2 , 0.3 nanomanganite with crystalline size of 18-28 nm have been prepared by sol gel method. The structural properties have been studied using X-ray diffraction spectra with its Rietveld analysis and scaning electron microscope images. The magnetic and elctrical properties have been investigated by measuring the ac magnetic susceptibility and resistivity in the presence of magnetic fields in the range of 0-20 kOe. The obtained results from ac magnetic susceptibility show that the Curie temperture of the samples are above room temperture. The results of resistivity show that the metal-insulator phase transition temperture of and compounds are below room temperture. The resistivity of the samples strongly decreases and their magnetoresistance almost linearly increases by incrasing the applied magnetic field at different tempertures. The value of magnetoresistance for compound is 10 % and 14 % at 275 K and 200 K, and for compound is 13 %  and 27 % at 275 K and 100 K, respectively which are suitable for magnetic field sensing applications. The magneto-transport properties of nanomanganite are described in terms of spin dependent scattering of charge carriers from grain boundaries and their spin dependent tunneling between grains. 

  1. Angular Momentum

    Science.gov (United States)

    Shakur, Asif; Sinatra, Taylor

    2013-01-01

    The gyroscope in a smartphone was employed in a physics laboratory setting to verify the conservation of angular momentum and the nonconservation of rotational kinetic energy. As is well-known, smartphones are ubiquitous on college campuses. These devices have a panoply of built-in sensors. This creates a unique opportunity for a new paradigm in…

  2. Angular dependant micro-ESR characterization of a locally doped Gd3+:Al2O3 hybrid system for quantum applications

    Science.gov (United States)

    Wisby, I. S.; de Graaf, S. E.; Gwilliam, R.; Adamyan, A.; Kubatkin, S. E.; Meeson, P. J.; Tzalenchuk, A. Ya.; Lindstrom, T.

    Rare-earth doped crystals interfaced with superconducting quantum circuitry are an attractive platform for quantum memory and transducer applications. Here we present a detailed characterization of a locally implanted Gd3+ in Al2O3 system coupled to a superconducting micro-resonator, by performing angular dependent micro-electron-spin-resonance (micro-ESR) measurements at mK temperatures. The device is fabricated using a hard Si3N4 mask to facilitate a local ion-implantation technique for precision control of the dopant location. The technique is found not to degrade the internal quality factor of the resonators which remains above 105 (1). We find the measured angular dependence of the micro-ESR spectra to be in excellent agreement with the modelled Hamiltonian, supporting the conclusion that the dopant ions are successfully integrated into their relevant lattice sites whilst maintaining crystalline symmetries. Furthermore, we observe clear contributions from individual microwave field components of our micro-resonator, emphasising the need for controllable local implantation. 1 Wisby et al. Appl. Phys. Lett. 105, 102601 (2014)

  3. Anisotropic magnetoresistance and thermodynamic fluctuations in high-temperature superconductors

    International Nuclear Information System (INIS)

    Heine, G.

    1999-05-01

    Measurements of the in-plane and out-of-plane resistivity and the transverse and longitudinal in-plane and out-of-plane magnetoresistance above T, are reported in the high-temperature superconductors Bi2Sr2CaCu208+' and YBa2CU307 b . The carrier concentration of the Bi2Sr2CaCu208+' single crystals covers a broad range of the phase diagram from the slightly under doped to the moderately over doped region. The doping concentration of the thin films ranges from strongly under doped to optimally doped. The in-plane resistivities obey a metallic-like temperature dependence with a positive magnetoresistance in the transverse and the longitudinal orientation of the magnetic field. The out-of-plane resistivities show an activated behavior above T, with a metallic region at higher temperatures and negative magnetoresistance. The data were analyzed in the framework of a model for superconducting order parameter fluctuations. The positive in-plane magnetoresistance of the highly anisotropic Bi2Sr2CaCu208+x single crystals is interpreted as the suppression of the fluctuation-conductivity enhancement including orbital and spin contributions, whereas the negative magnetoresistance arises from the reduction of the fluctuation-induced pseudogap in the single-electron density-of-states by the magnetic field. For higher temperatures a transition to the normal-state magnetoresistance occurs for the in-plane transport. In the less anisotropic YBa2CU307 b thin films the positive out-of-plane magnetoresistance near T, changes sign to a negative magnetoresistance at higher temperatures. This behavior is also consistent with predictions from the theory of thermodynamic order-parameter fluctuations. The agreement of the fluctuation theory with the experimental findings is excellent for samples from the over doped side of the phase diagram, but deteriorate with decreasing carrier concentration. This behavior is interpreted by the dominating d-wave symmetry of the superconducting order

  4. Magnetoresistance stories of double perovskites

    Indian Academy of Sciences (India)

    2015-05-28

    May 28, 2015 ... Tunnelling magnetoresistance (TMR) in polycrystalline double perovskites has been an important research topic for more than a decade now, where the nature of the insulating tunnel barrier is the core issue of debate. Other than the nonmagnetic grain boundaries as conventional tunnel barriers, intragrain ...

  5. Negative magnetoresistance in perpendicular of the superlattices axis weak magnetic field at scattering of impurity ions

    International Nuclear Information System (INIS)

    Askerov, B. M.; Figarova, R.; Guseynov, G.I.

    2012-01-01

    Full Text : The transverse magnetoresistance in superlattices with the cosine dispersion law of conduction electrons in a case, when a weak magnetic field in plane of layer at scattering of the charge carriers of impurity ions has been studied. It has been shown that in a quasi-two-dimensional case the magnetoresistance was positive, while in a quasi-three-dimensional case can become negative depending of a degree of mini-band filling. Such behavior of magnetoresistance, apparently, has been related to presence in a mini-band of region with the negative effective mass

  6. Recovery of oscillatory magneto-resistance in phase separated La0.3Pr0.4Ca0.3MnO3 epitaxial thin films

    International Nuclear Information System (INIS)

    Alagoz, H. S.; Jeon, J.; Mahmud, S. T.; Saber, M. M.; Chow, K. H.; Jung, J.; Prasad, B.; Egilmez, M.

    2013-01-01

    In-plane angular dependent magneto-resistance has been studied in La 0.3 Pr 0.4 Ca 0.3 MnO 3 (LPCMO) manganite thin films deposited on the (100) oriented NdGaO 3 , and (001) oriented SrTiO 3 and LaAlO 3 substrates. At temperatures where the electronic phase separation is the strongest, a metastable irreversible state exists in the films whose resistivity ρ attains a large time dependent value. The ρ decreases sharply with an increasing angle θ between the magnetic field and the current, and does not display an expected oscillatory cos 2 θ/sin 2 θ dependence for all films. The regular oscillations are recovered during repetitive sweeping of θ between 0° and 180°. We discuss possible factors that could produce these unusual changes in the resistivity

  7. Study of magnetoresistance in the supercooled state of Dy-Y alloys

    Science.gov (United States)

    Jena, Rudra Prasad; Lakhani, Archana

    2018-02-01

    We report the magnetoresistance studies on Dy1-xYx (x ≤ 0.05) alloys across the first order helimagnetic to ferromagnetic phase transition. These alloys exhibit multiple magnetic phases on varying the temperature and magnetic field. The magnetoresistance studies in the hysteresis region shows irreversibility in forward and reverse field cycles. The resistivity values at zero field for these alloys after zero field cooling to the measurement temperatures, are different in both forward and reverse field cycles. The path dependence of magnetoresistance suggests the presence of helimagnetic phase as the supercooled metastable state which transforms to the stable ferromagnetic state on increasing the field. At high magnetic fields negative magnetoresistance following a linear dependence with field is observed which is attributed to the magnon scattering.

  8. The study of the sample size on the transverse magnetoresistance of bismuth nanowires

    International Nuclear Information System (INIS)

    Zare, M.; Layeghnejad, R.; Sadeghi, E.

    2012-01-01

    The effects of sample size on the galvanomagnetice properties of semimetal nanowires are theoretically investigated. Transverse magnetoresistance (TMR) ratios have been calculated within a Boltzmann Transport Equation (BTE) approach by specular reflection approximation. Temperature and radius dependence of the transverse magnetoresistance of cylindrical Bismuth nanowires are given. The obtained values are in good agreement with the experimental results, reported by Heremans et al. - Highlights: ► In this study effects of sample size on the galvanomagnetic properties of Bi. ► Nanowires were explained by Parrott theorem by solving the Boltzmann Transport Equation. ► Transverse magnetoresistance (TMR) ratios have been measured by specular reflection approximation. ► Temperature and radius dependence of the transverse magnetoresistance of cylindrical Bismuth nanowires are given. ► The obtained values are in good agreement with the experimental results, reported by Heremans et al.

  9. Magnetoresistance in amorphous NdFeB/FeB compositionally modulated multilayers

    International Nuclear Information System (INIS)

    Peral, G.; Briones, F.; Vicent, J.L.

    1991-01-01

    Resistance measurements have been done in amorphous Nd 12 Fe 80 B 8 sputtered films and in amorphous sputtered Nd 26 Fe 68 B 6 /Fe 92 B 8 multilayers between 6 and 150 K with applied magnetic field parallel (LMR) and perpendicular (TMR) up to 7 T. The samples were grown by dc triode sputtering, with nominal unequal (2:1) layer thicknesses. The layered character of the samples have been tested by x-ray diffraction. Longitudinal magnetoresistance (LMR) is positive and transverse magnetoresistance (TMR) is negative. The magnetoresistance values are higher than in amorphous ferromagnets, and multilayering of these alloys produces much larger magnetoresistance values than either alloy alone and there is a strong dependence on the multilayer wavelength. The MR shows a weak temperature dependence in the temperature interval that was investigated

  10. Frozen magnetoresistance at magnetization reversal of granular Bi(Pb)-HTSC

    International Nuclear Information System (INIS)

    Sukhanov, A.A.; Omelchenko, V.I.

    2004-01-01

    The frozen magnetoresistance dependences of granular Bi(Pb)-HTSC samples on fields initiating a magnetic flux trapping and on magnetic reversal fields Rt(Hi, Hr) are investigated. It is found that the Rt (Hr) dependences are nonmonotonous. The frozen magnetoresistance decreases substantially after the first pulse Hr applied (Hr < Hi) but remains practically unchanged at subsequent remagnetization by magnetic pulses of alternating polarity and of the same amplitude. The effect of magnetic reversal on magnetoresistance anisotropy and the negative magnetoresistance phenomenon are studied. Is shown that the results obtained are inconsistent with the model of critical state for SC grains and the model of SC loops but are well described quantitatively by the proposed Bi(Pb)-HTSC model according to which the magnetic flux trapping occurs in normal grains with HTSC shells and the sample resistance is determined by weak link chains

  11. SU-E-J-206: A Comparison of Different Hardware Design Approaches for Feature-Supported Optical Head-Tracking with Respect to Angular Dependencies

    International Nuclear Information System (INIS)

    Stueber, P; Wissel, T; Wagner, B; Bruder, R; Schweikard, A; Ernst, F

    2014-01-01

    Purpose: Recent research has shown that optical features significantly improve marker-less optical head-tracking for cranial radiotherapy. Simulations, however, showed that these optical features, which are used to derive tissue thickness, depend on the incident angle of the IR scanning laser beam and the perspective of the camera analyzing the reflective patterns. We present an experimental analysis determining which is the most robust optical setup concerning angular influences. Methods: In three consecutive experiments, the incident angle of the laser (1), the perspective of the camera (2) or both simultaneously (3, ‘inBeam’-perspective) were changed with respect to the target. We analyzed how this affects feature intensity. These intensities were determined from seven concentric regions of interest (ROIs) around the laser spot. Two targets were used: a tissue-like silicone phantom and a human's forehead. Results: For each experiment, the feature intensity generally decreases with increasing angle. We found that the optical properties of the silicone phantom do not fit the properties of human skin. Furthermore, the angular influence of the laser on the features is significantly higher than the perspective of the camera. With the ‘inBeam’- perspective, the smoothest decays of feature intensity were found. We suppose that this is because of a fixed relationship between both devices. This smoothness, suggesting a predictable functional relationship, may simplify angle compensation for machine learning algorithms. This is particularly prominent for the medial ROIs. The inner ROIs highly depend on the angle and power of the laser. The outer ROIs show less angular dependency but the signal strength is critically low and prone to artifacts. Therefore and because of the smooth decays, medial ROIs are a suitable tradeoff between susceptibility, signal-noise-ratio and distance to the center of the laser spot. Conclusion: For tissue thickness correlated feature

  12. SU-E-T-644: Evaluation of Angular Dependence Correction for 2D Array Detector Using for Quality Assurance of Volumetric Modulated Arc Therapy

    International Nuclear Information System (INIS)

    Karthikeyan, N; Ganesh, K M; Vikraman, S; Shariff, MH

    2014-01-01

    Purpose: To evaluate the angular dependence correction for Matrix Evolution 2D array detector in quality assurance of volumetric modulated arc therapy(VMAT). Methods: Total ten patients comprising of different sites were planned for VMAT and taken for the study. Each plan was exposed on Matrix Evolution 2D array detector with Omnipro IMRT software based on the following three different methods using 6MV photon beams from Elekta Synergy linear accelerator. First method, VMAT plan was delivered on Matrix Evolution detector as it gantry mounted with dedicated holder with build-up of 2.3cm. Second, the VMAT plan was delivered with the static gantry angle on to the table mounted setup. Third, the VMAT plan was delivered with actual gantry angle on Matrix Evolution detector fixed in Multicube phantom with gantry angle sensor and angular dependence correction were applied to quantify the plan quality. For all these methods, the corresponding QA plans were generated in TPS and the dose verification was done for both point and 2D fluence analysis with pass criteria of 3% dose difference and 3mm distance to agreement. Results: The measured point dose variation for the first method was observed as 1.58±0.6% of mean and SD with TPS calculated. For second and third method, the mean and standard deviation(SD) was observed as 1.67±0.7% and 1.85±0.8% respectively. The 2D fluence analysis of measured and TPS calculated has the mean and SD of 97.9±1.1%, 97.88±1.2% and 97.55±1.3% for first, second and third methods respectively. The calculated two-tailed Pvalue for point dose and 2D fluence analysis shows the insignificance with values of 0.9316 and 0.9015 respectively, among the different methods of QA. Conclusion: The qualitative evaluation of angular dependence correction for Matrix Evolution 2D array detector shows its competency in accuracy of quality assurance measurement of composite dose distribution of volumetric modulated arc therapy

  13. SU-E-J-206: A Comparison of Different Hardware Design Approaches for Feature-Supported Optical Head-Tracking with Respect to Angular Dependencies

    Energy Technology Data Exchange (ETDEWEB)

    Stueber, P; Wissel, T; Wagner, B [Institute for Robotics and Cognitive Systems, University of Luebeck, Luebeck (Germany); Graduate School for Computing in Life Science, University of Luebeck, Luebeck (Germany); Bruder, R; Schweikard, A; Ernst, F [Institute for Robotics and Cognitive Systems, University of Luebeck, Luebeck (Germany)

    2014-06-01

    Purpose: Recent research has shown that optical features significantly improve marker-less optical head-tracking for cranial radiotherapy. Simulations, however, showed that these optical features, which are used to derive tissue thickness, depend on the incident angle of the IR scanning laser beam and the perspective of the camera analyzing the reflective patterns. We present an experimental analysis determining which is the most robust optical setup concerning angular influences. Methods: In three consecutive experiments, the incident angle of the laser (1), the perspective of the camera (2) or both simultaneously (3, ‘inBeam’-perspective) were changed with respect to the target. We analyzed how this affects feature intensity. These intensities were determined from seven concentric regions of interest (ROIs) around the laser spot. Two targets were used: a tissue-like silicone phantom and a human's forehead. Results: For each experiment, the feature intensity generally decreases with increasing angle. We found that the optical properties of the silicone phantom do not fit the properties of human skin. Furthermore, the angular influence of the laser on the features is significantly higher than the perspective of the camera. With the ‘inBeam’- perspective, the smoothest decays of feature intensity were found. We suppose that this is because of a fixed relationship between both devices. This smoothness, suggesting a predictable functional relationship, may simplify angle compensation for machine learning algorithms. This is particularly prominent for the medial ROIs. The inner ROIs highly depend on the angle and power of the laser. The outer ROIs show less angular dependency but the signal strength is critically low and prone to artifacts. Therefore and because of the smooth decays, medial ROIs are a suitable tradeoff between susceptibility, signal-noise-ratio and distance to the center of the laser spot. Conclusion: For tissue thickness correlated

  14. Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi

    OpenAIRE

    Casper, Frederick; Felser, Claudia

    2007-01-01

    The semiconducting half-Heulser compound DyNiBi shows a negative giant magnetoresistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal-insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase.

  15. Colossal Magnetoresistance Manganites and Related Prototype Devices

    OpenAIRE

    Liu, Yukuai; Yin, Yuewei; Li, Xiaoguang

    2013-01-01

    We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb:SrTiO3 pn junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions ...

  16. Fast Magnetoresistive Random-Access Memory

    Science.gov (United States)

    Wu, Jiin-Chuan; Stadler, Henry L.; Katti, Romney R.

    1991-01-01

    Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

  17. First-order chiral to non-chiral transition in the angular dependence of the upper critical induction of the Scharnberg–Klemm p-wave pair state

    International Nuclear Information System (INIS)

    Zhang, J; Gu, Q; Lörscher, C; Klemm, R A

    2014-01-01

    We calculate the temperature T and angular (θ, ϕ) dependencies of the upper critical induction B c2 (θ, ϕ, T) for parallel-spin superconductors with an axially symmetric p-wave pairing interaction pinned to the lattice and a dominant ellipsoidal Fermi surface (FS). For all FS anisotropies, the chiral Scharnberg–Klemm (SK) state B c2 (θ, ϕ, T) exceeds that of the chiral Anderson–Brinkman–Morel (ABM) state and exhibits a kink at θ = θ * (T, ϕ), indicative of a first-order transition from its chiral, nodal-direction behavior to its non-chiral, antinodal-direction behavior. Applicabilities to Sr 2 RuO 4 , UCoGe and the candidate topological superconductor Cu x Bi 2 Se 3 are discussed. (fast track communication)

  18. A strategy to reduce the angular dependence of a dye-sensitized solar cell by coupling to a TiO2 nanotube photonic crystal

    Science.gov (United States)

    Guo, Min; Xie, Keyu; Liu, Xiaolin; Wang, Yu; Zhou, Limin; Huang, Haitao

    2014-10-01

    Almost all types of solar cells suffer from a decreased power output when the incident light is tilted away from normal since the incident intensity generally follows a cosine law of the incident angle. Making use of the blue shift nature of the Bragg position of a TiO2 nanotube photonic crystal (NT PC) under oblique incidence, we demonstrate experimentally that the use of the NT PC can partially compensate the cosine power loss of a dye-sensitized solar cell (DSSC). The strategy used here is to purposely choose the Bragg position of the NT PC to be at the longer wavelength side of the dye absorption peak. When the incident light is tilted, the blue shift of the Bragg position results in more overlap with the dye absorption peak, generating a higher efficiency that partially compensates the reduced photon flux due to light inclination. Moreover, the unique structure of the vertically aligned TiO2 nanotubes contributes an additional scattering effect when the incident light is tilted. As a result, the power output of a DSSC coupled with the NT PC layer shows a much flatter angular dependence than a DSSC without the NT PC. At all the incident angles, the DSSC coupled with the NT PC layer also shows a higher power conversion efficiency than the one without. The concept of using NT PC to mitigate the angular dependence of DSSCs can be easily extended to many other optoelectronic devices that are irradiance sensitive.Almost all types of solar cells suffer from a decreased power output when the incident light is tilted away from normal since the incident intensity generally follows a cosine law of the incident angle. Making use of the blue shift nature of the Bragg position of a TiO2 nanotube photonic crystal (NT PC) under oblique incidence, we demonstrate experimentally that the use of the NT PC can partially compensate the cosine power loss of a dye-sensitized solar cell (DSSC). The strategy used here is to purposely choose the Bragg position of the NT PC to be at the

  19. Fast ignition: Dependence of the ignition energy on source and target parameters for particle-in-cell-modelled energy and angular distributions of the fast electrons

    Energy Technology Data Exchange (ETDEWEB)

    Bellei, C.; Divol, L.; Kemp, A. J.; Key, M. H.; Larson, D. J.; Strozzi, D. J.; Marinak, M. M.; Tabak, M.; Patel, P. K. [Lawrence Livermore National Laboratory, 7000 East Avenue, Livermore, California 94550 (United States)

    2013-05-15

    The energy and angular distributions of the fast electrons predicted by particle-in-cell (PIC) simulations differ from those historically assumed in ignition designs of the fast ignition scheme. Using a particular 3D PIC calculation, we show how the ignition energy varies as a function of source-fuel distance, source size, and density of the pre-compressed fuel. The large divergence of the electron beam implies that the ignition energy scales with density more weakly than the ρ{sup −2} scaling for an idealized beam [S. Atzeni, Phys. Plasmas 6, 3316 (1999)], for any realistic source that is at some distance from the dense deuterium-tritium fuel. Due to the strong dependence of ignition energy with source-fuel distance, the use of magnetic or electric fields seems essential for the purpose of decreasing the ignition energy.

  20. Evolution and sign control of square-wave-like anisotropic magneto-resistance in spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3}/LaAlO{sub 3}(001) manganite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Alagoz, H. S., E-mail: alagoz@ualberta.ca; Jeon, J.; Keating, S.; Chow, K. H., E-mail: khchow@ualberta.ca; Jung, J., E-mail: jjung@ualberta.ca [Department of Physics, University of Alberta, Edmonton, Alberta T6G 2E1 (Canada)

    2016-04-14

    We investigated magneto-transport properties of a compressively strained spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} (LPCMO) thin film micro-bridge deposited on LaAlO{sub 3}. Angular dependence of the magneto-resistance R(θ) of this bridge, where θ is the angle between the magnetic field and the current directions in the film plane, exhibits sharp positive and negative percolation jumps near T{sub MIT}. The sign and the magnitude of these jumps can be tuned using the magnetic field. Such behavior has not been observed in LPCMO micro-bridges subjected to tensile strain, indicating a correlation between the type of the lattice strain, the distribution of electronic domains, and the anisotropic magneto-resistance in spatially confined manganite systems.

  1. In-plane angular dependence of the spin-wave nonreciprocity of an ultrathin film with Dzyaloshinskii-Moriya interaction

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Vanessa Li; Di, Kai; Lim, Hock Siah; Ng, Ser Choon; Kuok, Meng Hau, E-mail: phykmh@nus.edu.sg [Department of Physics, National University of Singapore, Singapore 117551 (Singapore); Yu, Jiawei; Yoon, Jungbum; Qiu, Xuepeng; Yang, Hyunsoo, E-mail: eleyang@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

    2015-07-13

    The nonreciprocal propagation of spin waves in an ultrathin Pt/Co/Ni film has been measured by Brillouin light scattering. The frequency nonreciprocity, due to the interfacial Dzyaloshinskii-Moriya interaction (DMI), has a sinusoidal dependence on the in-plane angle between the magnon wavevector and the applied magnetic field. The results, which are in good agreement with analytical predictions reported earlier, yield a value of the DMI constant which is the same as that obtained previously from a study of the magnon dispersion relations. We have demonstrated that our magnon-dynamics based method can experimentally ascertain the DMI constant of multilayer thin films.

  2. Tunnel magnetoresistance in double spin filter junctions

    International Nuclear Information System (INIS)

    Saffarzadeh, Alireza

    2003-01-01

    We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

  3. Longitudinal magnetoresistance and magnototermopower in Bi nanowires

    International Nuclear Information System (INIS)

    Para, G.

    2011-01-01

    Full text: The galvanomagnetic effect of single crystals Bi nanowires have been studied in longitudinal magnetic fields up to 14 T. The influence of diameters, temperature and deformation extension on the longitudinal magnetoresistance and magnetotermopower (H||I, H||ΔT) of bismuth nanowires is studied. Elastic deformation measurements were conducted at maximum relative elongation 2 %. For the first time have been investigated the magnetotermopower of Bi nanowires with d=45 nm. Essentially non monotonic dependence H max on temperature in longitudinal thermopower in wires with d=45-60 nm is found out. Such difference in behavior of maximum on R(H) and on α(H) in wires with d<100nm says that the behavior of resistance is caused by other mechanism, then thermopower. (author)

  4. Modeling the planar configuration of extraordinary magnetoresistance

    International Nuclear Information System (INIS)

    El-Ahmar, S; Pozniak, A A

    2015-01-01

    Recently the planar version of the extraordinary magnetoresistance (EMR) magnetic field sensor has been constructed and verified in practice. Planar configuration of the EMR device gives many technological advantages, it is simpler than the classic and allows one to build the sensor using electric materials of the new type (such as graphene or topological insulators) much easier. In this work the planar configuration of the EMR sensor is investigated by performing computational simulations using the finite element method (FEM). The computational comparison of the planar and classic configurations of EMR is presented using three-dimensional models. Various variants of the geometry of EMR sensor components are pondered and compared in the planar and classic version. Size of the metal overlap is considered for sensor optimization as well as various semiconductor-metal contact resistance dependences of the EMR signal. Based on computational simulations, a method for optimal placement of electric terminals in a planar EMR device is proposed. (paper)

  5. Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2

    Science.gov (United States)

    Li, Hui; Wang, Huan-Wen; He, Hongtao; Wang, Jiannong; Shen, Shun-Qing

    2018-05-01

    Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar Hall effect. The relative anisotropic magnetoresistance is negative and up to -68% at 2 K and 10 T. The high anisotropy and the minus sign in this isotropic and nonmagnetic material are attributed to a field-dependent current along the magnetic field, which may be induced by the Berry curvature of the band structure. This observation not only reveals unusual physical phenomena in Weyl and Dirac semimetals, but also finds additional transport signatures of Weyl and Dirac fermions other than negative magnetoresistance.

  6. Magnetoresistance of tungsten thin wafer at the multichannel surface scattering of conduction electrons

    International Nuclear Information System (INIS)

    Lutsishin, P.P.; Nakhodkin, T.N.

    1982-01-01

    The magnetoresistance of tungsten thin wafer with the (110) surface was studied at the adsorption of tungsten dioxide. The method of low-energy electron diffraction was used to study the symmetry of ordered surface structures. Using the method of the magnetoresistance measurement the character of the scattering of conduction electrons was investigated. THe dependence of magnetoresistance on the surface concentration of tungsten dioxide correlated w1th the structure of the surface layer of atoms, what was explained with allowance for diffraction of conduction electrons at the metal boundary. The magnetoresistance maximum for the (2x2) structure, which characterised decrease in surface conduction under the conditions of static skin effect, was explained by multichannel mirror reflection with the recombinations of electron and ho.le sections of Fermi Surface

  7. Angular dependence of J{sub c} for YBCO coated conductors at low temperature and very high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Xu, A; Jaroszynski, J J; Kametani, F; Chen, Z; Larbalestier, D C [Applied Superconductivity Center, National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310 (United States); Viouchkov, Y L [National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310 (United States); Chen, Y; Xie, Y; Selvamanickam, V, E-mail: aixiaxu@asc.magnet.fsu.ed [SuperPower Incorporated, 450 Duane Avenue, Schenectady, NY 12304 (United States)

    2010-01-15

    We present very high field angle dependent critical current density (J{sub c}) data for three recently obtained YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) coated conductors used in the construction of high field solenoids. We find that strongly correlated pins, such as BaZrO{sub 3} (BZO) nanorods, while yielding strong c-axis peaks at 77 K, produce almost no measurable contribution at 4 K. Raising the field from <5 to 30 T at 4 K causes a marked transition from a Ginzburg-Landau-like J{sub c}({theta}) at low fields to a marked cusp-like behavior at high fields. Transmission electron micrographs show that all samples contain a high density of stacking faults which strengthen the plane correlated pinning parallel to the ab planes produced by the intrinsic ab-plane pinning of the Cu-O charge reservoir layers.

  8. Beta response of CaSO4:Dy based TLD badge and its angular dependence studies for personnel monitoring applications

    International Nuclear Information System (INIS)

    Kumar, Munish; Rakesh, R.B.; Sneha, C.; Ratna, P.; Bakshi, A.K.; Datta, D.

    2016-01-01

    In India, shallow/skin doses received by radiation workers from beta particles are measured using CaSO 4 :Dy based Teflon embedded TLD badge. The beta particles having maximum energy E max > 0.6 MeV - ≥ 3.54 MeV are monitored. The ratio of the response of discs under open and plastic regions (D Open/ D Perspex ) is used to estimate the energy of the beta source and to apply response correction factor. This is required as the disc dosimeters are thick and exhibit energy dependent response. Due to lack of comprehensive information regarding disc ratios and associated beta multiplication/response correction factors, present study was performed

  9. Fission fragment angular momentum

    International Nuclear Information System (INIS)

    Frenne, D. De

    1991-01-01

    Most of the energy released in fission is converted into translational kinetic energy of the fragments. The remaining excitation energy will be distributed among neutrons and gammas. An important parameter characterizing the scission configuration is the primary angular momentum of the nascent fragments. Neutron emission is not expected to decrease the spin of the fragments by more than one unit of angular momentum and is as such of less importance in the determination of the initial fragment spins. Gamma emission is a suitable tool in studying initial fragment spins because the emission time, number, energy, and multipolarity of the gammas strongly depend on the value of the primary angular momentum. The main conclusions of experiments on gamma emission were that the initial angular momentum of the fragments is large compared to the ground state spin and oriented perpendicular to the fission axis. Most of the recent information concerning initial fragment spin distributions comes from the measurement of isomeric ratios for isomeric pairs produced in fission. Although in nearly every mass chain isomers are known, only a small number are suitable for initial fission fragment spin studies. Yield and half-life considerations strongly limit the number of candidates. This has the advantage that the behavior of a specific isomeric pair can be investigated for a number of fissioning systems at different excitation energies of the fragments and fissioning nuclei. Because most of the recent information on primary angular momenta comes from measurements of isomeric ratios, the global deexcitation process of the fragments and the calculation of the initial fragment spin distribution from measured isomeric ratios are discussed here. The most important results on primary angular momentum determinations are reviewed and some theoretical approaches are given. 45 refs., 7 figs., 2 tabs

  10. SU-E-T-44: Angular Dependence of Surface Dose Enhancement Measured On Several Inhomogeneities Using Radiochromic EBT3 Films

    International Nuclear Information System (INIS)

    Jansen, A; Schoenfeld, A; Poppinga, D; Chofor, N; Poppe, B

    2014-01-01

    Purpose: The quantification of the relative surface dose enhancement in dependence on the angle of incidence and the atomic number Z of the surface material. Methods: Experiments were performed with slabs made of aluminum, titanium, copper, silver, dental gold and lead. The metal slabs with equal sizes of 1.0×8.0×8.8mm 3 were embedded in an Octavius 4D phantom (PTW Freiburg, Germany). Radiochromic EBT3 films were used to measure the surface dose for angles of incidence ranging from 0° to 90°. The setup with the metals slabs at the isocenter was irradiated with acceleration voltages of 6MV and 10MV. Water reference measurements were taken under equal conditions. Results: The surface dose enhancement is highest for angles of incidence below 30° and drops significantly for higher. The surface dose enhancement produced by lead and dental gold at 6MV showed a peak of 65%. At 90°, the surface dose enhancement dropped to 15% for both materials. The surface dose enhancements for silver, copper, titanium and aluminum were 45%, 32%, 22% and 12% at 0°, respectively. At an angle of incidence of 80°, the values dropped to 22%, 18%, 12% und 6%. The values for 10MV were very similar. Lead and dental gold showed peaks of 65% und 60%. Their values dropped to 18% at an angle of 90°. The surface dose enhancements for silver, copper, titanium and aluminum were 45%, 30%, 20% and 8% at 0°. At 80° the values dropped to 30%, 20%, 12% and 5%. A dependence of the magnitude of the surface dose enhancement on the atomic number of the surface material can be seen, which is in consistence with literature. Conclusion: The results show that the surface dose enhancements near implant materials with high Z-values should be taken into consideration in radio therapy, even when the angle of incidence is flat

  11. Magnetoresistance effect in perovskite-like RCu3Mn4O12 (R - rare earth ion, Th)

    International Nuclear Information System (INIS)

    Lobanovskij, L.S.; Troyanchuk, I.O.; Trukhanov, S.V.; Pastushonok, S.N.; Pavlov, V.I.

    2003-01-01

    The study on the electric properties and magnetoresistance effect in the RCu 3 Mn 4 O 12 (where R is the rare-earth ion, Th) is carried out. It is established that all the compositions of the given series demonstrate the magnetoresistive effect, the value whereof at the liquid nitrogen temperature reaches 20% in the field 0.9 T. The increase in the magnetoresistance with the temperature decrease and high sensitivity to the weak magnetic fields at low temperatures indicate that this effect is intergranular. The peak of the magnetoresistance is identified near the Curie temperature (T C ). It is supposed that the degree of the magnetoresistance near the temperature of the magnetic ordering depends on the conditions of the samples synthesis and the effect of the intergranular interlayer on the transport properties of these compositions [ru

  12. LHCb: Tagged time-dependent angular analysis of $B^0_s \\to J/\\psi K^+ K^-$ at LHCb

    CERN Multimedia

    Syropoulos, V

    2013-01-01

    The time-dependent CP-violating asymmetry in $B^0_s\\to J/\\psi K^{+}K^{-}$ decays is measured using $1.0^{-1}$ of $pp$ of collisions at $\\sqrt{s}=7$ TeV collected with the LHCb detector. The decay time distribution of $B^0_s\\to J/\\psi K^{+}K^{-}$ is characterized by the decay widths $\\Gamma_{\\mathrm{H}}$ and $\\Gamma_{\\mathrm{L}}$ of the heavy and light mass eigenstates of the $B^0_s - \\bar{B^0_s}$ system and by a CP-violating phase $\\phi_s$. In a sample of approximately 27600 $B^0_s\\to J/\\psi K^{+}K^{-}$ events we measure $\\phi_s \\: = \\: 0.068 \\: \\pm \\: 0.091 \\: \\text{(stat)} \\: \\pm \\: 0.011 \\: \\text{(syst)} \\: \\text{rad}$. We also find an average $B^0_s$ decay width $\\Gamma_s \\equiv (\\Gamma_{\\mathrm{L}}+\\Gamma_{\\mathrm{H}})/2 \\: = \\: 0.671 \\: \\pm \\: 0.005 \\: \\text{(stat)} \\: \\pm \\: 0.006 \\: \\text{(syst)} \\: ps^{-1}$ and a decay width difference $\\Delta \\Gamma_s \\equiv \\Gamma_{\\mathrm{L}} - \\Gamma_{\\mathrm{H}} \\: = \\: 0.100 \\: \\pm \\: 0.016 \\: \\text{(stat)} \\: \\pm \\: 0.003 \\: \\text{(syst)} \\: ps^...

  13. Evolution of the spin hall magnetoresistance in Cr2O3/Pt bilayers close to the Néel temperature

    Science.gov (United States)

    Schlitz, Richard; Kosub, Tobias; Thomas, Andy; Fabretti, Savio; Nielsch, Kornelius; Makarov, Denys; Goennenwein, Sebastian T. B.

    2018-03-01

    We study the evolution of magnetoresistance with temperature in thin film bilayers consisting of platinum and antiferromagnet Cr2O3 with its easy axis out of the plane. We vary the temperature from 20 °C to 60 °C, in the vicinity of the Néel temperature of Cr2O3 of approximately 37 °C. The magnetoresistive response is recorded during rotations of the external magnetic field in three mutually orthogonal planes. A large magnetoresistance having a symmetry consistent with a positive spin Hall magnetoresistance is observed in the paramagnetic phase of Cr2O3, which however vanishes when cooling to below the Néel temperature. Compared to analogous experiments in a Gd3Ga5O12/Pt bilayer, we conclude that a paramagnetic moment in the insulator induced by an applied magnetic field is not sufficient to explain the observed magnetoresistance. We speculate that the type of magnetic moment at the interface qualitatively impacts the spin angular momentum transfer, with the 3d moments of Cr sinking angular momentum much more efficiently as compared to the more localized 4f moments of Gd.

  14. Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

    Energy Technology Data Exchange (ETDEWEB)

    Liu, C.; Boyko, Y.; Geppert, C. C.; Christie, K. D.; Stecklein, G.; Crowell, P. A., E-mail: crowell@physics.umn.edu [School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Patel, S. J. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Palmstrøm, C. J. [Department of Materials, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2014-11-24

    We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the n-GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/n-GaAs heterostructures, including Co{sub 2}MnSi/n-GaAs, Co{sub 2}FeSi/n-GaAs, and Fe/n-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.

  15. Angular dependence of SiO2 etch rate at various bias voltages in a high density CHF3 plasma

    International Nuclear Information System (INIS)

    Lee, Gyeo-Re; Hwang, Sung-Wook; Min, Jae-Ho; Moon, Sang Heup

    2002-01-01

    The dependence of the SiO 2 etch rate on the angle of ions incident on the substrate surface was studied over a bias voltage range from -20 to -600 V in a high-density CHF 3 plasma using a Faraday cage to control the ion incident angle. The effect of the bottom plane on the sidewall etching was also examined. Differences in the characteristics of the etch rate as a function of the ion angle were observed for different bias voltage regions. When the absolute value of the bias voltage was smaller than 200 V, the normalized etch rate (NER) defined as the etch rate normalized by the rate on the horizontal surface, changed following a cosine curve with respect to the ion incident angle, defined as the angle between the ion direction and the normal of the substrate surface. When the magnitude of the bias voltage was larger than 200 V, the NER was deviated to higher values from those given by a cosine curve at ion angles between 30 deg. and 70 deg. , and then drastically decreased at angles higher than 70 deg. until a net deposition was observed at angles near 90 deg. . The characteristic etch-rate patterns at ion angles below 70 deg. were determined by the ion energy transferred to the surface, which affected the SiO 2 etch rate and, simultaneously, the rate of removal of a fluorocarbon polymer film formed on the substrate surface. At high ion angles, particles emitted from the bottom plane contributed to polymer formation on and affected the etching characteristics of the substrate

  16. Phase and ellipticity dependence of the photoelectron angular distribution in non-resonant two-photon ionization of atomic hydrogen. I

    Energy Technology Data Exchange (ETDEWEB)

    Faye, M; Wane, S T, E-mail: mamadou.faye@ucad.edu.sn [Departement de Physique, Faculte des Sciences et Techniques, Universite Cheikh Anta Diop, Boulevard Martin Luther King, (Corniche Ouest) BP 5005-Dakar Fann (Senegal)

    2011-03-14

    We study the ellipticity and the dependence on the phase lag (lead) (between the semimajor and the semiminor axes of the field components) of the photoelectron angular distribution (PAD) in the non-resonant two-photon ionization of atomic hydrogen. We establish exact analytical expressions for azimuthal PAD for 3s, 3p and 3d excited initial states, marked by the occurrence of an asymmetric term. This term gives rise to elliptic dichroism (ED), which can be obtained in two ways: either with the left (versus right) ellipticity, or with the phase lag (versus lead); for 3s and 3p initial states, it is shown that the quantum phase of continua is directly related to the phase lag, one-photon below-threshold ionization, and indirectly one photon above. Another important result is that the magnetic sublevels, m = 0, for 3p and m = {+-}1, for 3d, do not contribute to the azimuthal PAD. Our numerical results show, for 3s and 3d, and near-threshold ionization, that the PAD has maxima either along the semimajor or the semiminor axis, while for above-threshold ionization, they are always shifted from these axes. However, the maxima of the corresponding ED coincide with the PAD maxima, while for 3p, they are shifted from the PAD minima. A strong dependence of the ED sign is noted, regardless of the state or the process. However, strong ED signals are obtained for the 3s initial state and below-threshold ionization.

  17. Angular dependence of etch rates in the etching of poly-Si and fluorocarbon polymer using SF6, C4F8, and O2 plasmas

    International Nuclear Information System (INIS)

    Min, Jae-Ho; Lee, Gyeo-Re; Lee, Jin-Kwan; Moon, Sang Heup; Kim, Chang-Koo

    2004-01-01

    The dependences of etch rates on the angle of ions incident on the substrate surface in four plasma/substrate systems that constitute the advanced Bosch process were investigated using a Faraday cage designed for the accurate control of the ion-incident angle. The four systems, established by combining discharge gases and substrates, were a SF 6 /poly-Si, a SF 6 /fluorocarbon polymer, an O 2 /fluorocarbon polymer, and a C 4 F 8 /Si. In the case of SF 6 /poly-Si, the normalized etch rates (NERs), defined as the etch rates normalized by the rate on the horizontal surface, were higher at all angles than values predicted from the cosine of the ion-incident angle. This characteristic curve shape was independent of changes in process variables including the source power and bias voltage. Contrary to the earlier case, the NERs for the O 2 /polymer decreased and eventually reached much lower values than the cosine values at angles between 30 deg. and 70 deg. when the source power was increased and the bias voltage was decreased. On the other hand, the NERs for the SF 6 /polymer showed a weak dependence on the process variables. In the case of C 4 F 8 /Si, which is used in the Bosch process for depositing a fluorocarbon layer on the substrate surface, the deposition rate varied with the ion incident angle, showing an S-shaped curve. These characteristic deposition rate curves, which were highly dependent on the process conditions, could be divided into four distinct regions: a Si sputtering region, an ion-suppressed polymer deposition region, an ion-enhanced polymer deposition region, and an ion-free polymer deposition region. Based on the earlier characteristic angular dependences of the etch (or deposition) rates in the individual systems, ideal process conditions for obtaining an anisotropic etch profile in the advanced Bosch process are proposed

  18. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures.

    Science.gov (United States)

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-09

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

  19. Magnetoresistance in La0.7Ca0.3MnO3-YBa2Cu3O7 F/S/F trilayers

    International Nuclear Information System (INIS)

    Pena, V.; Visani, C.; Bruno, F.; Garcia-Barriocanal, J.; Arias, D.; Rivera, A.; Sefrioui, Z.; Leon, C.; Te Velthuis, S.G.E.; Hoffmann, A.; Nemes, N.; Garcia-Hernandez, M.; Martinez, J.L.; Santamaria, J.

    2007-01-01

    We report large magnetoresistance in ferromagnet/superconductor/ferromagnet structures made of La 0.7 Ca 0.3 MnO 3 and YBa 2 Cu 3 O 7 at temperatures along the resistive transition. We find that the magnetoresistance phenomenon is independent on the orientation of electric current versus field. Furthermore, the effect is also independent on the sweep rate of the magnetic field. This excludes interpretations in terms of spontaneous vortices or anisotropic magnetoresistance of the ferromagnetic layers and supports the view that the magnetoresistance phenomenon originates at the spin-dependent transport of quasiparticles transmitted from the ferromagnetic electrodes into the superconductor

  20. Study of CP Symmetry Violation in the Charmonium-K*(892) Channel By a Complete Time Dependent Angular Analysis (BaBar Experiment)

    Energy Technology Data Exchange (ETDEWEB)

    T' Jampens, Stephane; /Orsay

    2006-09-18

    This thesis presents the full-angular time-dependent analysis of the vector-vector channel B{sub d}{sup 0} {yields} J/{psi}(K{sub S}{sup 0}{pi}{sup 0})*{sup 0}. After a review of the CP violation in the B meson system, the phenomenology of the charmonium-K*(892) channels is exposed. The method for the measurement of the transversity amplitudes of the B {yields} J/{psi}K*(892), based on a pseudo-likelihood method, is then exposed. The results from a 81.9 fb{sup -1} of collected data by the BABAR detector at the {Upsilon}(4S) resonance peak are |A{sub 0}|{sup 2} = 0.565 {+-} 0.011 {+-} 0.004, |A{sub {parallel}}|{sup 2} = 0.206 {+-} 0.016 {+-} 0.007, |A{sub {perpendicular}}|{sup 2} = 0.228 {+-} 0.016 {+-} 0.007, {delta}{sub {parallel}} = -2.766 {+-} 0.105 {+-} 0.040 and {delta}{sub {perpendicular}} = 2.935 {+-} 0.067 {+-} 0.040. Note that ({delta}{sub {parallel}}, {delta}{sub {perpendicular}}) {yields} (-{delta}{sub {parallel}}, {pi} - {delta}{sub {perpendicular}}) is also a solution. The strong phases {delta}{sub {parallel}} and {delta}{sub {perpendicular}} are at {approx}> 3{sigma} from {+-}{pi}, signing the presence of final state interactions and the breakdown of the factorization hypothesis. The forward-backward analysis of the K{pi} mass spectrum revealed the presence of a coherent S-wave interfering with the K*(892). It is the first evidence of this wave in the K{pi} system coming from a B meson. The particularity of the B{sub d}{sup 0} {yields} J/{psi}(K{sub S}{sup 0}{pi}{sup 0})*{sup 0} channel is to have a time-dependent but also an angular distribution which allows to measure sin 2{beta} but also cos2{beta}. The results from an unbinned maximum likelihood fit are sin 2{beta} = -0.10 {+-} 0.57 {+-} 0.14 and cos 2{beta} = 3.32{sub -0.96}{sup +0.76} {+-} 0.27 with the transversity amplitudes fixed to the values given above. The other solution for the strong phases flips the sign of cos 2{beta}. Theoretical considerations based on the s-quark helicity

  1. Artifacts that mimic ballistic magnetoresistance

    International Nuclear Information System (INIS)

    Egelhoff, W.F. . E-mail : egelhoff@nist.gov; Gan, L.; Ettedgui, H.; Kadmon, Y.; Powell, C.J.; Chen, P.J.; Shapiro, A.J.; McMichael, R.D.; Mallett, J.J.; Moffat, T.P.; Stiles, M.D.; Svedberg, E.B.

    2005-01-01

    We have investigated the circumstances underlying recent reports of very large values of ballistic magnetoresistance (BMR) in nanocontacts between magnetic wires. We find that the geometries used are subject to artifacts due to motion of the wires that distort the nanocontact thereby changing its electrical resistance. Since these nanocontacts are often of atomic scale, reliable experiments would require stability on the atomic scale. No method for achieving such stability in macroscopic wires is apparent. We conclude that macroscopic magnetic wires cannot be used to establish the validity of the BMR effect

  2. Giant magneto-resistance devices

    CERN Document Server

    Hirota, Eiichi; Inomata, Koichiro

    2002-01-01

    This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

  3. Spin polarized electron tunneling and magnetoresistance in molecular junctions.

    Science.gov (United States)

    Szulczewski, Greg

    2012-01-01

    This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

  4. On the Angular Dependence of the Vicinal Fluorine-Fluorine Coupling Constant in 1,2-Difluoroethane:  Deviation from a Karplus-like Shape.

    Science.gov (United States)

    Provasi, Patricio F; Sauer, Stephan P A

    2006-07-01

    The angular dependence of the vicinal fluorine-fluorine coupling constant, (3)JFF, for 1,2-difluoroethane has been investigated with several polarization propagator methods. (3)JFF and its four Ramsey contributions were calculated using the random phase approximation (RPA), its multiconfigurational generalization, and both second-order polarization propagator approximations (SOPPA and SOPPA(CCSD)), using locally dense basis sets. The geometries were optimized for each dihedral angle at the level of density functional theory using the B3LYP functional and fourth-order Møller-Plesset perturbation theory. The resulting coupling constant curves were fitted to a cosine series with 8 coefficients. Our results are compared with those obtained previously and values estimated from experiment. It is found that the inclusion of electron correlation in the calculation of (3)JFF reduces the absolute values. This is mainly due to changes in the FC contribution, which for dihedral angles around the trans conformation even changes its sign. This sign change is responsible for the breakdown of the Karplus-like curve.

  5. Angular and radial dependence of the energy response factor for LiF-TLD micro-rods in 125I permanent implant source

    International Nuclear Information System (INIS)

    Mobit, P.; Badragan, I.

    2006-01-01

    EGSnrc Monte Carlo simulations were used to calculate the angular and radial dependence of the energy response factor for LiF-thermoluminescence dosemeters (TLDs) irradiated with a commercially available 125 I permanent brachytherapy source. The LiF-TLDs were modelled as cylindrical micro-rods of length 6 mm and with diameters of 1 mm and 5 mm. The results show that for a LiF-TLD micro-rod of 1 mm diameter, the energy response relative to 60 Co gamma rays is 1.406 ± 0.3% for a polar angle of 90 deg. and radial distance of 1.0 cm. When the diameter of the micro-rod is increased from 1 to 5 mm, the energy response decreases to 1.32 ± 0.3% at the same point. The variation with position of the energy response factor is not >5% in a 6 cm x 6 cm x 6 cm calculation grid for the 5 mm diameter micro-rod. The results show that there is a change in the photon spectrum with angle and radial distance, which causes the variation of the energy response. (authors)

  6. High field magnetoresistance and de Haas-van Alphen effect in antiferromagnetic PrB6 and NdB6

    International Nuclear Information System (INIS)

    Onuki, Y.; Umezawa, A.; Kwok, W.K.; Crabtree, G.W.; Nishihara, M.; Yamazaki, T.; Omi, T.; Komatsubara, T.

    1987-08-01

    The transport properties and the de Haas-van Alphen (dHvA) effect have been measured for antiferromagnetic PrB 6 and NdB 6 . The number of conduction electrons is approximately one per unit cell. The magnetoresistance shows the existence of open orbits implying a multiply connected Fermi surface. The angular dependence of the magnetoresistance is roughly similar to that of the reference material, LaB 6 . The dHvA data in PrB 6 shows both paramagnetic and antiferromagnetic Fermi surfaces. The antiferromagnetic Fermi surface arises from new magnetic Brillouin zone boundaries and antiferromagnetic gaps introduced by the magnetic order, and the paramagnetic Fermi surface from magnetic breakdown through the small antiferromagnetic gaps in high field. Hybridization between the conduction electrons and the f electrons has been observed through the cyclotron masses, which in PrB 6 are three times larger than the corresponding masses of LaB 6 . In NdB 6 only the antiferromagnetic Fermi surface, quite different from those of LaB 6 and PrB 6 , has been observed. 26 refs., 10 figs., 3 tabs

  7. Phase and ellipticity dependence of the photoelectron angular distribution in non-resonant two-photon ionization of atomic hydrogen. I

    International Nuclear Information System (INIS)

    Faye, M; Wane, S T

    2011-01-01

    We study the ellipticity and the dependence on the phase lag (lead) (between the semimajor and the semiminor axes of the field components) of the photoelectron angular distribution (PAD) in the non-resonant two-photon ionization of atomic hydrogen. We establish exact analytical expressions for azimuthal PAD for 3s, 3p and 3d excited initial states, marked by the occurrence of an asymmetric term. This term gives rise to elliptic dichroism (ED), which can be obtained in two ways: either with the left (versus right) ellipticity, or with the phase lag (versus lead); for 3s and 3p initial states, it is shown that the quantum phase of continua is directly related to the phase lag, one-photon below-threshold ionization, and indirectly one photon above. Another important result is that the magnetic sublevels, m = 0, for 3p and m = ±1, for 3d, do not contribute to the azimuthal PAD. Our numerical results show, for 3s and 3d, and near-threshold ionization, that the PAD has maxima either along the semimajor or the semiminor axis, while for above-threshold ionization, they are always shifted from these axes. However, the maxima of the corresponding ED coincide with the PAD maxima, while for 3p, they are shifted from the PAD minima. A strong dependence of the ED sign is noted, regardless of the state or the process. However, strong ED signals are obtained for the 3s initial state and below-threshold ionization.

  8. Magnetoresistive multilayers deposited on the AAO membranes

    International Nuclear Information System (INIS)

    Malkinski, Leszek M.; Chalastaras, Athanasios; Vovk, Andriy; Jung, Jin-Seung; Kim, Eun-Mee; Jun, Jong-Ho; Ventrice, Carl A.

    2005-01-01

    Silicon and GaAs wafers are the most commonly used substrates for deposition of giant magnetoresistive (GMR) multilayers. We explored a new type of a substrate, prepared electrochemically by anodization of aluminum sheets, for deposition of GMR multilayers. The surface of this AAO substrate consists of nanosized hemispheres organized in a regular hexagonal array. The current applied along the substrate surface intersects many magnetic layers in the multilayered structure, which results in enhancement of giant magnetoresistance effect. The GMR effect in uncoupled Co/Cu multilayers was significantly larger than the magnetoresistance of similar structures deposited on Si

  9. Magnetoresistance through spin-polarized p states

    International Nuclear Information System (INIS)

    Papanikolaou, Nikos

    2003-01-01

    We present a theoretical study of the ballistic magnetoresistance in Ni contacts using first-principles, atomistic, electronic structure calculations. In particular we investigate the role of defects in the contact region with the aim of explaining the recently observed spectacular magnetoresistance ratio. Our results predict that the possible presence of spin-polarized oxygen in the contact region could explain conductance changes by an order of magnitude. Electronic transport essentially occurs through spin-polarized oxygen p states, and this mechanism gives a much higher magnetoresistance than that obtained assuming clean atomically sharp domain walls alone

  10. Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn.

    Science.gov (United States)

    Galceran, R; Fina, I; Cisneros-Fernández, J; Bozzo, B; Frontera, C; López-Mir, L; Deniz, H; Park, K-W; Park, B-G; Balcells, Ll; Martí, X; Jungwirth, T; Martínez, B

    2016-10-20

    Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15% has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature.

  11. Negative magnetoresistance in Dirac semimetal Cd3As2.

    Science.gov (United States)

    Li, Hui; He, Hongtao; Lu, Hai-Zhou; Zhang, Huachen; Liu, Hongchao; Ma, Rong; Fan, Zhiyong; Shen, Shun-Qing; Wang, Jiannong

    2016-01-08

    A large negative magnetoresistance (NMR) is anticipated in topological semimetals in parallel magnetic fields, demonstrating the chiral anomaly, a long-sought high-energy-physics effect, in solid-state systems. Recent experiments reveal that the Dirac semimetal Cd3As2 has the record-high mobility and positive linear magnetoresistance in perpendicular magnetic fields. However, the NMR has not yet been unveiled. Here we report the observation of NMR in Cd3As2 microribbons in parallel magnetic fields up to 66% at 50 K and visible at room temperatures. The NMR is sensitive to the angle between magnetic and electrical fields, robust against temperature and dependent on the carrier density. The large NMR results from low carrier densities in our Cd3As2 samples, ranging from 3.0 × 10(17) cm(-3) at 300 K to 2.2 × 10(16) cm(-3) below 50 K. We therefore attribute the observed NMR to the chiral anomaly. In perpendicular magnetic fields, a positive linear magnetoresistance up to 1,670% at 14 T and 2 K is also observed.

  12. Recovery of oscillatory magneto-resistance in phase separated La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Alagoz, H. S., E-mail: alagoz@ualberta.ca; Jeon, J.; Mahmud, S. T.; Saber, M. M.; Chow, K. H., E-mail: khchow@ualberta.ca; Jung, J., E-mail: jjung@ualberta.ca [Department of Physics, University of Alberta, Edmonton, Alberta T6G 2E1 (Canada); Prasad, B. [Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ (United Kingdom); Egilmez, M. [Department of Physics, American University of Sharjah, Sharjah (United Arab Emirates)

    2013-12-02

    In-plane angular dependent magneto-resistance has been studied in La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} (LPCMO) manganite thin films deposited on the (100) oriented NdGaO{sub 3}, and (001) oriented SrTiO{sub 3} and LaAlO{sub 3} substrates. At temperatures where the electronic phase separation is the strongest, a metastable irreversible state exists in the films whose resistivity ρ attains a large time dependent value. The ρ decreases sharply with an increasing angle θ between the magnetic field and the current, and does not display an expected oscillatory cos{sup 2}θ/sin{sup 2}θ dependence for all films. The regular oscillations are recovered during repetitive sweeping of θ between 0° and 180°. We discuss possible factors that could produce these unusual changes in the resistivity.

  13. Angular momentum projected semiclassics

    International Nuclear Information System (INIS)

    Hasse, R.W.

    1986-10-01

    By using angular momentum projected plane waves as wave functions, we derive semiclassical expressions for the single-particle propagator, the partition function, the nonlocal density matrix, the single-particle density and the one particle- one hole level density for fixed angular momentum and fixed z-component or summed over the z-components. Other quantities can be deduced from the propagator. In coordinate space (r, r') the relevant quantities depend on vertical stroker - r 3 vertical stroke instead of vertical stroker - r'vertical stroke and in Wigner space (R, P) they become proportional to the angular momentum constraints δ(vertical strokeRxPvertical stroke/ℎ - l) and δ((RxP) z /ℎ - m). As applications we calculate the single-particle and one particle- one hole level densities for harmonic oscillator and Hill-Wheeler box potentials and the imaginary part of the optical potential and its volume integral with an underlying harmonic oscillator potential and a zero range two-body interaction. (orig.)

  14. Magnetoresistance and magnetization in submicron ferromagnetic gratings

    Science.gov (United States)

    Shearwood, C.; Blundell, S. J.; Baird, M. J.; Bland, J. A. C.; Gester, M.; Ahmed, H.; Hughes, H. P.

    1994-05-01

    A technique for engineering micron and submicron scale structures from magnetic films of transition metals has been developed using a combination of electron- and ion-beam lithography enabling high-quality arrays of submicron magnetic Fe wires to be fabricated. This process can be used to fabricate novel devices from a variety of metal combinations which would not be possible by the usual liftoff metallization method. The structure and magnetic properties are reported of an epitaxial 25 nm Fe(001)/GaAs(001) film and the wire gratings which are fabricated from it. The width of the wires in the grating is 0.5 μm for all structures studied, but the separation of each wire is varied in the range 0.5 to 16 μm. An artificially induced shape anisotropy field of around 1 kG, consistent with a magnetostatic calculation, was observed for all separations studied. The field dependence of the magneto-optic Kerr effect and magnetoresistance (MR) data is consistent with a twisted magnetization configuration across the width of the sample beneath saturation for transverse applied fields. In this case, the detailed form of the field dependence of the MR is strikingly modified from that observed in the continuous film and is consistent with coherent rotation of the magnetization.

  15. Positive magnetoresistance in Fe3Se4 nanowires

    Science.gov (United States)

    Li, D.; Jiang, J. J.; Liu, W.; Zhang, Z. D.

    2011-04-01

    We report the magnetotransport properties of Fe3Se4 nanowire arrays in anodic aluminum oxide (AAO) porous membrane. The temperature dependence of resistance of Fe3Se4 nanowires at a zero field shows thermal activated behavior below 295 K. The exponential relationship in resistance is consistent with the model of strong localization with variable-range hopping (VRH) for a finite one-dimensional wire. Resistance versus magnetic field curves below 100 K show small positive magnetoresistance (MR). The field dependencies of log[R(H)/R(0)] explain the positive MR as the effect of magnetic field on the VRH conduction.

  16. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.

    Science.gov (United States)

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-21

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  17. Angular momentum of dwarf galaxies

    Science.gov (United States)

    Kurapati, Sushma; Chengalur, Jayaram N.; Pustilnik, Simon; Kamphuis, Peter

    2018-05-01

    Mass and specific angular momentum are two fundamental physical parameters of galaxies. We present measurements of the baryonic mass and specific angular momentum of 11 void dwarf galaxies derived from neutral hydrogen (HI) synthesis data. Rotation curves were measured using 3D and 2D tilted ring fitting routines, and the derived curves generally overlap within the error bars, except in the central regions where, as expected, the 3D routines give steeper curves. The specific angular momentum of void dwarfs is found to be high compared to an extrapolation of the trends seen for higher mass bulge-less spirals, but comparable to that of other dwarf irregular galaxies that lie outside of voids. As such, our data show no evidence for a dependence of the specific angular momentum on the large scale environment. Combining our data with the data from the literature, we find a baryonic threshold of ˜109.1 M⊙ for this increase in specific angular momentum. Interestingly, this threshold is very similar to the mass threshold below which the galaxy discs start to become systematically thicker. This provides qualitative support to the suggestion that the thickening of the discs, as well as the increase in specific angular momentum, are both results of a common physical mechanism, such as feedback from star formation. Quantitatively, however, the amount of star formation observed in our dwarfs appears insufficient to produce the observed increase in specific angular momentum. It is hence likely that other processes, such as cold accretion of high angular momentum gas, also play a role in increasing the specific angular momentum.

  18. Size effects under a strong magnetic field: transverse magnetoresistance of thin gold films deposited on mica

    International Nuclear Information System (INIS)

    Munoz, Raul C; HenrIquez, Ricardo; GarcIa, Juan Pablo; Moncada, Ana MarIa; Espinosa, Andres; Robles, Marcelo; Kremer, German; Moraga, Luis; Cancino, Simon; Morales, Jose Roberto; RamIrez, Adan; Oyarzun, Simon; Suarez, Marco Antonio; Chen, David; Zumelzu, Ernesto; Lizama, Claudio

    2006-01-01

    We report measurements of transverse magnetoresistance where the signal can be attributed to electron-surface scattering, together with measurements of the surface roughness of the films on an atomic scale. The measurements were performed with a scanning tunnelling microscope (STM) on four thin gold films evaporated onto mica. The magnetoresistance exhibits a marked thickness dependence: at 4 K and 9 T is about 5% for the thinner (69 nm) film, and about 14% for the thicker (185 nm) film. Sondheimer's theory provides an accurate description of the temperature dependence of the resistivity, but predicts a magnetoresistance one order of magnitude smaller than that observed at 4 K. Calecki's theory in the limit of small roughness correlation length, predicts a resistivity two orders of magnitude larger than observed at 4 K

  19. Anomalies of magnetoresistance of compounds with atomic clusters RB12 (R = Ho, Er, Tm, Lu)

    International Nuclear Information System (INIS)

    Sluchanko, N. E.; Bogach, A. V.; Glushkov, V. V.; Demishev, S. V.; Samarin, N. A.; Sluchanko, D. N.; Dukhnenko, A. V.; Levchenko, A. V.

    2009-01-01

    The magnetoresistance and magnetization of single-crystal samples of rare-earth dodecaborides RB 12 (R = Ho, Er, Tm, Lu) have been measured at low temperatures (1.8-35 K) in a magnetic field of up to 70 kOe. The effect of positive magnetoresistance that obeys the Kohler's rule Δρ/ρ = f(ρ(0, 300 K)H/ρ(0, T)) is observed for the nonmagnetic metal LuB 12 . In the magnetic dodecaborides HoB 12 , ErB 12 , and TmB 12 , three characteristic regimes of the magnetoresistance behavior have been revealed: the positive magnetoresistance effect similar to the case of LuB 12 is observed at T > 25 K; in the range T N ≤ T ≤ 15 K, the magnetoresistance becomes negative and depends quadratically on the external magnetic field; and, finally, upon the transition to the antiferromagnetic phase (T N ), the positive magnetoresistance is again observed and its amplitude reaches 150% for HoB 12 . It has been shown that the observed anomalies of negative magnetoresistance in the paramagnetic phase can be explained within the Yosida model of conduction electron scattering by localized magnetic moments. The performed analysis confirms the formation of spin-polaron states in the 5d band in the vicinity of rare-earth ions in paramagnetic and magnetically ordered phases of RB 12 and makes it possible to reveal a number of specific features in the transformation of the magnetic structure of the compounds under investigation

  20. Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 °C.

    Science.gov (United States)

    Takemura, Yasutaka; Lee, Du-Yeong; Lee, Seung-Eun; Park, Jea-Gun

    2016-12-02

    For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top Co 2 Fe 6 B 2 free layer ex situ annealed at 400 °C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t Pt ): it peaked (∼134%) at a specific t Pt (3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the Co 2 Fe 6 B 2 pinned layer when t Pt increased from 2.0-3.3 nm, and then rapidly decreased from 134%-38.6% by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when t Pt increased from 3.3-14.3 nm.

  1. Inverse Magnetoresistance in Polymer Spin Valves.

    Science.gov (United States)

    Ding, Shuaishuai; Tian, Yuan; Li, Yang; Mi, Wenbo; Dong, Huanli; Zhang, Xiaotao; Hu, Wenping; Zhu, Daoben

    2017-05-10

    In this work, both negative and positive magnetoresistance (MR) in solution-processed regioregular poly(3-hexylthiophene) (RR-P3HT) is observed in organic spin valves (OSVs) with vertical La 2/3 Sr 1/3 MnO 3 (LSMO)/P3HT/AlO x /Co configuration. The ferromagnetic (FM) LSMO electrode with near-atomic flatness is fabricated by a DC facing-target magnetron sputtering method. This research is focused on the origin of the MR inversion. Two types of devices are investigated in details: One with Co penetration shows a negative MR of 0.2%, while the other well-defined device with a nonlinear behavior has a positive MR of 15.6%. The MR measurements in LSMO/AlO x /Co and LSMO/Co junctions are carried to exclude the interference of insulating layer and two FM electrodes themselves. By examining the Co thicknesses and their corresponding magnetic hysteresis loops, a spin-dependent hybrid-interface-state model by Co penetration is induced to explain the MR sign inversion. These results proven by density functional theory (DFT) calculations may shed light on the controllable interfacial properties in designing novel OSV devices.

  2. Giant magnetoresistance, three-dimensional Fermi surface and origin of resistivity plateau in YSb semimetal.

    Science.gov (United States)

    Pavlosiuk, Orest; Swatek, Przemysław; Wiśniewski, Piotr

    2016-12-09

    Very strong magnetoresistance and a resistivity plateau impeding low temperature divergence due to insulating bulk are hallmarks of topological insulators and are also present in topological semimetals where the plateau is induced by magnetic field, when time-reversal symmetry (protecting surface states in topological insulators) is broken. Similar features were observed in a simple rock-salt-structure LaSb, leading to a suggestion of the possible non-trivial topology of 2D states in this compound. We show that its sister compound YSb is also characterized by giant magnetoresistance exceeding one thousand percent and low-temperature plateau of resistivity. We thus performed in-depth analysis of YSb Fermi surface by band calculations, magnetoresistance, and Shubnikov-de Haas effect measurements, which reveals only three-dimensional Fermi sheets. Kohler scaling applied to magnetoresistance data accounts very well for its low-temperature upturn behavior. The field-angle-dependent magnetoresistance demonstrates a 3D-scaling yielding effective mass anisotropy perfectly agreeing with electronic structure and quantum oscillations analysis, thus providing further support for 3D-Fermi surface scenario of magnetotransport, without necessity of invoking topologically non-trivial 2D states. We discuss data implying that analogous field-induced properties of LaSb can also be well understood in the framework of 3D multiband model.

  3. Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.

    Science.gov (United States)

    Oltscher, M; Eberle, F; Kuczmik, T; Bayer, A; Schuh, D; Bougeard, D; Ciorga, M; Weiss, D

    2017-11-27

    A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both a large two-terminal magnetoresistance in a lateral spin valve device with a two-dimensional channel, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. The enhanced magnetoresistance is due to finite electric field effects at the contact interface, which boost spin-to-charge conversion. The gating scheme that we use is based on switching between uni- and bidirectional spin diffusion, without resorting to spin-orbit coupling. Therefore, it can also be employed in materials with low spin-orbit coupling.

  4. Magnetoresistance measurements of different geometries on epitaxial InP and GaInAs/InP layers

    Energy Technology Data Exchange (ETDEWEB)

    Somogyi, K. [Hungarian Academy of Sciences, Budapest (Hungary). Research Inst. for Technical Physics

    1996-12-31

    Hall effect measurement is the main method of the determination of the charge carrier mobility in semiconductors. Magnetoresistance measurements are much less used for the same purpose, perhaps because of the influence of the sample geometry or of the scattering factor differing from the Hall factor. On the other hand, in the case of the epitaxial layers, all these measurements require semi-insulating substrate. In this work two aspects of the magnetoresistance measurements and use of them is demonstrated. First classical geometrical magnetoresistance measurements on InP are studied. On the other hand, a method is presented and applied to sandwich structures in order to measure the geometrical magnetoresistance on epitaxial layers grown on conducting substrates. Resistance of structures metal-epitaxial layer-substrate-metal is measured in the dependence on the angle between the current and magnetic field vectors.

  5. Role of spin polarized tunneling in magnetoresistance and low

    Indian Academy of Sciences (India)

    Role of spin polarized tunneling in magnetoresistance and low temperature minimum of polycrystalline La1–KMnO3 ( = 0.05, 0.1, ... Manganites; magnetoresistance; low temperature resistivity; spin polarized tunneling. ... Current Issue

  6. Superconducting spin-triplet-MRAM with infinite magnetoresistance ratio

    Energy Technology Data Exchange (ETDEWEB)

    Lenk, Daniel; Ullrich, Aladin; Obermeier, Guenter; Mueller, Claus; Krug von Nidda, Hans-Albrecht; Horn, Siegfried; Tidecks, Reinhard [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); Morari, Roman [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Solid State Physics Department, Kazan Federal University, 420008 Kazan (Russian Federation); Zdravkov, Vladimir I. [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Institute of Applied Physics and Interdisciplinary Nanoscience Center, Universitaet Hamburg, Jungiusstrasse 9A, D-20355 Hamburg (Germany); Sidorenko, Anatoli S. [D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Tagirov, Lenar R. [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); Solid State Physics Department, Kazan Federal University, 420008 Kazan (Russian Federation)

    2016-07-01

    We fabricated a nanolayered hybrid superconductor-ferromagnet spin-valve structure, i.e. the superconducting transition temperature of this structure depends on its magnetic history. The observed spin-valve effect is based on the generation of the long range odd in frequency triplet component, arising from a non-collinear relative orientation of the constituent ferromagnetic layers. We investigated the effect both as a function of the sweep amplitude of the magnetic field, determining the magnetic history, and the applied transport current. Moreover, we demonstrate the possibility of switching the system from the normal o the superconducting state by applying field pulses, yielding an infinite magnetoresistance ratio.

  7. Tunneling anisotropic magnetoresistance via molecular π orbitals of Pb dimers

    Science.gov (United States)

    Schöneberg, Johannes; Ferriani, Paolo; Heinze, Stefan; Weismann, Alexander; Berndt, Richard

    2018-01-01

    Pb dimers on a ferromagnetic surface are shown to exhibit large tunneling anisotropic magnetoresistance (TAMR) due to molecular π orbitals. Dimers oriented differently with respect to the magnetization directions of a ferromagnetic Fe double layer on W(110) were made with a scanning tunneling microscope. Depending on the dimer orientations, TAMR is absent or as large as 20% at the Fermi level. General arguments and first-principles calculations show that mixing of molecular orbitals due to spin-orbit coupling, which leads to TAMR, is maximal when the magnetization is oriented parallel to the dimer axis.

  8. Current perpendicular to plane giant magnetoresistance in laminated nanostructures

    International Nuclear Information System (INIS)

    Vedyayev, A.; Zhukov, I.; Dieny, B.

    2005-01-01

    We theoretically studied spin-dependent electron transport perpendicular-to-plain (CPP) in magnetic laminated multilayered structures by using Kubo formalism. We took into account not only bulk scattering, but the interface resistance due to both specular and diffuse reflection and also spin conserving and spin-flip processes. It was shown that spin-flip scattering at interfaces substantially reduces the value of giant magnetoresistance (GMR). This can explain the experimental observations that the CPP GMR ratio for laminated structures only slightly increases as compared to non-laminated ones even though lamination induces a significant increase in CPP resistance

  9. Magnon Spin Hall Magnetoresistance of a Gapped Quantum Paramagnet

    Science.gov (United States)

    Ulloa, Camilo; Duine, R. A.

    2018-04-01

    Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the spin current mediated by the interface exchange coupling between the ferromagnet and the adjacent normal metal. For the strongly interacting magnons that we consider, this spin current gives rise to a spin Hall magnetoresistance that strongly depends on the magnitude of the magnetic field, rather than its direction. This Letter may motivate electrical detection of the phases of quantum magnets and the incorporation of such materials into spintronic devices.

  10. Investigation of doping and particle size effect on structural, magnetic and magnetoresistance properties of manganites

    Directory of Open Access Journals (Sweden)

    M. Hakimi

    2008-06-01

    Full Text Available  In this paper after introduction of manganites, we have studied the effect of particle size and doping on structural, magnetic and magnetoresistance of LSMO manganite samples. The magnetoresistance measurements show that, by decreasing the particle size LFMR increases. Also the results show that the LFMR increases at low doping levels and decreases at high doping levels. The spin dependent tunneling and scattering at the grain boundaries is the origin of increasing the LFMR at low doping levels. Also the substitution of impurity ions at Mn sites and subsequently weaking of double exchange is responsible for decreasing of LFMR at high doping level.

  11. Piecewise parabolic negative magnetoresistance of two-dimensional electron gas with triangular antidot lattice

    International Nuclear Information System (INIS)

    Budantsev, M. V.; Lavrov, R. A.; Pogosov, A. G.; Zhdanov, E. Yu.; Pokhabov, D. A.

    2011-01-01

    Extraordinary piecewise parabolic behavior of the magnetoresistance has been experimentally detected in the two-dimensional electron gas with a dense triangular lattice of antidots, where commensurability magnetoresistance oscillations are suppressed. The magnetic field range of 0–0.6 T can be divided into three wide regions, in each of which the magnetoresistance is described by parabolic dependences with high accuracy (comparable to the experimental accuracy) and the transition regions between adjacent regions are much narrower than the regions themselves. In the region corresponding to the weakest magnetic fields, the parabolic behavior becomes almost linear. The observed behavior is reproducible as the electron gas density changes, which results in a change in the resistance by more than an order of magnitude. Possible physical mechanisms responsible for the observed behavior, including so-called “memory effects,” are discussed.

  12. Room temperature giant and linear magnetoresistance in topological insulator Bi2Te3 nanosheets.

    Science.gov (United States)

    Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao

    2012-06-29

    Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi(2)Te(3) topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

  13. Tuning the magnetoresistance of ultrathin WTe2 sheets by electrostatic gating.

    Science.gov (United States)

    Na, Junhong; Hoyer, Alexander; Schoop, Leslie; Weber, Daniel; Lotsch, Bettina V; Burghard, Marko; Kern, Klaus

    2016-11-10

    The semimetallic, two-dimensional layered transition metal dichalcogenide WTe 2 has raised considerable interest due to its huge, non-saturating magnetoresistance. While for the origin of this effect, a close-to-ideal balance of electrons and holes has been put forward, the carrier concentration dependence of the magnetoresistance remains to be clarified. Here, we present a detailed study of the magnetotransport behaviour of ultrathin, mechanically exfoliated WTe 2 sheets as a function of electrostatic back gating. The carrier concentration and mobility, determined using the two band model and analysis of the Shubnikov-de Haas oscillations, indicate enhanced surface scattering for the thinnest sheets. By the back gate action, the magnetoresistance could be tuned by up to ∼100% for a ∼13 nm-thick WTe 2 sheet.

  14. Linear magnetoresistance and surface to bulk coupling in topological insulator thin films.

    Science.gov (United States)

    Singh, Sourabh; Gopal, R K; Sarkar, Jit; Pandey, Atul; Patel, Bhavesh G; Mitra, Chiranjib

    2017-12-20

    We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi 2 Se 2 Te and BiSbTeSe 1.6 were grown using the pulsed laser deposition technique and subjected to transport measurements. Magnetotransport measurements indicate a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values. We present a careful analysis to explain the origin of LMR taking into consideration all the existing models of LMR. Here we consider that the bulk insulating states and the metallic surface states constitute two parallel conduction channels. Invoking this, we were able to explain linear magnetoresistance behavior as a competition between these parallel channels. We observe that the cross-over field, where LMR sets in, decreases with increasing temperature. We propose that this cross-over field can be used phenomenologically to estimate the strength of surface to bulk coupling.

  15. Magnetoresistive biosensors for quantitative proteomics

    Science.gov (United States)

    Zhou, Xiahan; Huang, Chih-Cheng; Hall, Drew A.

    2017-08-01

    Quantitative proteomics, as a developing method for study of proteins and identification of diseases, reveals more comprehensive and accurate information of an organism than traditional genomics. A variety of platforms, such as mass spectrometry, optical sensors, electrochemical sensors, magnetic sensors, etc., have been developed for detecting proteins quantitatively. The sandwich immunoassay is widely used as a labeled detection method due to its high specificity and flexibility allowing multiple different types of labels. While optical sensors use enzyme and fluorophore labels to detect proteins with high sensitivity, they often suffer from high background signal and challenges in miniaturization. Magnetic biosensors, including nuclear magnetic resonance sensors, oscillator-based sensors, Hall-effect sensors, and magnetoresistive sensors, use the specific binding events between magnetic nanoparticles (MNPs) and target proteins to measure the analyte concentration. Compared with other biosensing techniques, magnetic sensors take advantage of the intrinsic lack of magnetic signatures in biological samples to achieve high sensitivity and high specificity, and are compatible with semiconductor-based fabrication process to have low-cost and small-size for point-of-care (POC) applications. Although still in the development stage, magnetic biosensing is a promising technique for in-home testing and portable disease monitoring.

  16. Huge magnetoresistance effect of highly oriented pyrolytic graphite

    International Nuclear Information System (INIS)

    Du Youwei; Wang Zhiming; Ni Gang; Xing Dingyu; Xu Qingyu

    2004-01-01

    Graphite is a quasi-two-dimensional semimetal. However, for usual graphite the magnetoresistance is not so high due to its small crystal size and no preferred orientation. Huge positive magnetoresistance up to 85300% at 4.2 K and 4950% at 300 K under 8.15 T magnetic field was found in highly oriented pyrolytic graphite. The mechanism of huge positive magnetoresistance is not only due to ordinary magnetoresistance but also due to magnetic-field-driven semimetal-insulator transition

  17. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

    OpenAIRE

    Zhang, Kun; Li, Huan-huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-tao; Tian, Yu-feng; Yan, Shi-shen; Lin, Zhao-jun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, and Liang-mo

    2015-01-01

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current volt...

  18. Magnetic anisotropy and anisotropic magnetoresistance of (Ga,Mn)As Layers on (113)A GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Donhauser, Daniela; Dreher, Lukas; Daeubler, Joachim; Glunk, Michael; Rapp, Christoph; Schoch, Wladimir; Sauer, Rolf; Limmer, Wolfgang [Institut fuer Halbleiterphysik, Universitaet Ulm (Germany)

    2009-07-01

    We study the magnetic anisotropy and the anisotropic magnetoresistance of compressively strained (Ga,Mn)As films with various Mn concentrations, grown on (113)A-oriented GaAs substrates. High-resolution x-ray diffraction (HRXRD) studies reveal a monoclinic symmetry of the distorted (113)A layers in agreement with an explicit calculation of the strain tensor. Based on this result, general expressions for the resistivity tensor and the free energy of single-crystalline ferromagnets are derived from a series expansion with respect to the magnetization orientation, including terms up to the fourth order. With these expressions we are able to model the measured angular dependences of our magnetotransport data with the assumption of a single ferromagnetic domain model. In order to quantitatively derive the resistivity and anisotropy parameters the longitudinal and transverse resistivities are experimentally studied for magnetic fields rotated within the (113), (33 anti 2), and (anti 110) plane at various field strengths. It turned out that some of the resistivity parameters significantly depend on the strength of the external magnetic field. Furthermore we found that the layers exhibit a uniaxial anisotropy along the [001] crystallographic axis, which can be theoretically explained based on the explicit form of the strain tensor.

  19. Magnetoresistance in terbium and holmium single crystals

    International Nuclear Information System (INIS)

    Singh, R.L.; Jericho, M.H.; Geldart, D.J.W.

    1976-01-01

    The longitudinal magnetoresistance of single crystals of terbium and holmium metals in their low-temperature ferromagnetic phase has been investigated in magnetic fields up to 80 kOe. Typical magnetoresistance isotherms exhibit a minimum which increases in depth and moves to higher fields as the temperature increases. The magnetoresistance around 1 0 K, where inelastic scattering is negligible, has been interpreted as the sum of a negative contribution due to changes in the domain structure and a positive contribution due to normal magnetoresistance. At higher temperatures, a phenomenological approach has been developed to extract the inelastic phonon and spin-wave components from the total measured magnetoresistance. In the temperature range 4--20 0 K (approximately), the phonon resistivity varies as T 3 . 7 for all samples. Approximate upper and lower bounds have been placed on the spin-wave resistivity which is also found to be described by a simple power law in this temperature range. The implications of this result for theoretical treatments of spin-wave resistivity due to s-f exchange interactions are considered. It is concluded that the role played by the magnon energy gap is far less transparent than previously suggested

  20. Sources of negative tunneling magnetoresistance in multilevel quantum dots with ferromagnetic contacts

    DEFF Research Database (Denmark)

    Koller, Sonja; Grifoni, Milena; Paaske, Jens

    2012-01-01

    We analyze distinct sources of spin-dependent energy level shifts and their impact on the tunneling magnetoresistance (TMR) of interacting quantum dots coupled to collinearly polarized ferromagnetic leads. Level shifts due to virtual charge fluctuations can be quantitatively evaluated within...

  1. Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Useinov, N.Kh.; Petukhov, D.A.; Tagirov, L.R.

    2015-01-01

    The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model. In DBMTJ nanostructure the magnetization of middle ferromagnetic metal layer can be aligned parallel or antiparallel with respect to the fixed magnetizations of the top and bottom ferromagnetic electrodes. The transmission coefficients of an electron to pass through the barriers have been calculated in terms of quantum mechanics. The dependencies of tunnel conductance and TMR on the applied voltage have been calculated in case of non-resonant transmission. Estimated in the framework of our model, the difference between the spin-channels conductances at low voltages was found relatively large. This gives rise to very high magnitude of TMR. - Highlights: • The spin-polarized conductance through the junction is calculated. • Dependencies of the tunnel conductance vs applied bias are shown. • Bias voltage dependence of tunnel magnetoresistance for the structure is shown

  2. Transverse target-spin asymmetry associated with deeply virtual Compton scattering on the proton and a resulting model-dependent constraint on the total angular momentum of quarks in the nucleon

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Zhenyu

    2007-02-15

    In this thesis we report on the rst results on the transverse target-spin asymmetry associated with deeply virtual Compton scattering on the proton. It is shown that this asymmetry can provide one of the rare possibilities to access the Generalized Parton Distribution (GPD) E of the nucleon, and thus, through models for E, also to the total angular momentum of u and d quarks in the nucleon. The measurement was performed using the 27.6 GeV positron beam of the HERA storage ring and the transversely polarized hydrogen target of the HERMES experiment at DESY. The two leading azimuthal amplitudes of the asymmetry are extracted from the HERMES 2002-2004 data, corresponding to an integrated luminosity of 65.3 pb.1. By comparing the results obtained at HERMES and theoretical predictions based on a phenomenological model of GPDs, we obtain a model-dependent constraint on the total angular momentum of quarks in the nucleon. (orig.)

  3. Transverse target-spin asymmetry associated with deeply virtual Compton scattering on the proton and a resulting model-dependent constraint on the total angular momentum of quarks in the nucleon

    International Nuclear Information System (INIS)

    Ye, Zhenyu

    2007-02-01

    In this thesis we report on the rst results on the transverse target-spin asymmetry associated with deeply virtual Compton scattering on the proton. It is shown that this asymmetry can provide one of the rare possibilities to access the Generalized Parton Distribution (GPD) E of the nucleon, and thus, through models for E, also to the total angular momentum of u and d quarks in the nucleon. The measurement was performed using the 27.6 GeV positron beam of the HERA storage ring and the transversely polarized hydrogen target of the HERMES experiment at DESY. The two leading azimuthal amplitudes of the asymmetry are extracted from the HERMES 2002-2004 data, corresponding to an integrated luminosity of 65.3 pb.1. By comparing the results obtained at HERMES and theoretical predictions based on a phenomenological model of GPDs, we obtain a model-dependent constraint on the total angular momentum of quarks in the nucleon. (orig.)

  4. The effect of magnetic ordering on the giant magnetoresistance of Cr-Fe-V and Cr-Fe-Mn

    International Nuclear Information System (INIS)

    Somsen, Ch.; Acet, M.; Nepecks, G.; Wassermann, E.F.

    2000-01-01

    Cr-rich Cr 1-x Fe x alloys with compositions in the vicinity of mixed ferromagnetic and antiferromagnetic exchange (x=0.18) exhibit giant magnetoresistance. In order to understand the influence of the antiferromagnetism of Cr on the giant magnetoresistance one can manipulate the antiferromagnetic exchange either by adding vanadium, which destroys the antiferromagnetism of Cr, or by adding manganese, which enhances it. Cr-Fe-V and Cr-Fe-Mn alloys also have Curie temperatures that lie between low temperatures and room temperature in the concentration region where giant magnetoresistance is observed. Therefore, they are also used as samples to study the magnetoresistance as a function of the strength of FM exchange. We discuss these points in the light of temperature and concentration-dependent magnetoresistance experiments on Cr 0.99-x Fe x V 0.01 , Cr 0.96-x Fe x V 0.04 , Cr 0.90-x Fe x Mn 0.10 and Cr 0.55 Fe x Mn 0.45-x alloys. Results indicate that the most favorable condition for a large magnetoresistance in these alloys occurs at temperatures near the Curie temperature

  5. Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory

    International Nuclear Information System (INIS)

    Oyarzún, Simón; Henríquez, Ricardo; Suárez, Marco Antonio; Moraga, Luis; Kremer, Germán; Munoz, Raúl C.

    2014-01-01

    We report new experimental data regarding the transverse magnetoresistance measured in a family of thin gold films of different thickness with the electric field E oriented perpendicular to the magnetic field B (both fields contained within the plane of the film), as well as a theoretical description of size effects based upon a solution of Boltzmann Transport Equation. The measurements were performed at low temperatures T (4 K ≤ T ≤ 50 K) under magnetic field strengths B (1.5 T ≤ B ≤ 9 T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4 K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reproduce the experimental data.

  6. Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory

    Energy Technology Data Exchange (ETDEWEB)

    Oyarzún, Simón [Institut Lumière Matière, UMR5306 Université Lyon 1-CNRS, Université de Lyon, 69622 Villeurbanne CEDEX (France); Henríquez, Ricardo [Departamento de Física, Universidad Técnica Federico Santa María, Av. España 1680, Casilla 110-V, Valparaíso (Chile); Suárez, Marco Antonio; Moraga, Luis [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago 8370449 (Chile); Kremer, Germán [Bachillerato, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago 7800024 (Chile); Munoz, Raúl C., E-mail: ramunoz@ing.uchile.cl [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Blanco Encalada 2008, Casilla 487-3, Santiago 8370449 (Chile)

    2014-01-15

    We report new experimental data regarding the transverse magnetoresistance measured in a family of thin gold films of different thickness with the electric field E oriented perpendicular to the magnetic field B (both fields contained within the plane of the film), as well as a theoretical description of size effects based upon a solution of Boltzmann Transport Equation. The measurements were performed at low temperatures T (4 K ≤ T ≤ 50 K) under magnetic field strengths B (1.5 T ≤ B ≤ 9 T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4 K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reproduce the experimental data.

  7. Professional AngularJS

    CERN Document Server

    Karpov, Valeri

    2015-01-01

    A comprehensive guide to AngularJS, Google's open-source client-side framework for app development. Most of the existing guides to AngularJS struggle to provide simple and understandable explanations for more advanced concepts. As a result, some developers who understand all the basic concepts of AngularJS struggle when it comes to building more complex real-world applications. Professional AngularJS provides a thorough understanding of AngularJS, covering everything from basic concepts, such as directives and data binding, to more advanced concepts like transclusion, build systems, and auto

  8. Magnetoresistance of nanogranular Ni/NiO controlled by exchange anisotropy

    International Nuclear Information System (INIS)

    Del Bianco, L.; Spizzo, F.; Tamisari, M.; Allia, P.

    2013-01-01

    A link between exchange anisotropy and magnetoresistance has been found to occur in a Ni/NiO sample consisting of Ni nanocrystallites (mean size ∼13 nm, Ni content ∼33 vol%) dispersed in a NiO matrix. This material shows metallic-type electric conduction and isotropic spin-dependent magnetoresistance as well as exchange bias effect. The latter is the outcome of an exchange anisotropy arising from the contact interaction between the Ni phase and the NiO matrix. Combined analysis of magnetization M(H) and magnetoresistance MR(H) loops measured in the 5–250 K temperature range after zero-field-cooling (ZFC) and after field-cooling (FC) from 300 K reveals that the magnetoresistance is influenced by exchange anisotropy, which is triggered by the FC process and can be modified in strength by varying the temperature. Compared to the ZFC case, the exchange anisotropy produces a horizontal shift of the FC MR(H) loop along with a reduction of the MR response associated to the reorientation of the Ni moments. A strict connection between magnetoresistance and remanent magnetization of FC loops on one side and the exchange field on the other, ruled by exchange anisotropy, is indicated. - Highlights: • Nanogranular Ni/NiO with giant magnetoresistance (MR) and exchange bias effect. • Exchange anisotropy produces a shift of the field-cooled MR(H) loop and reduces MR. • MR, remanence of field-cooled loops and exchange field are three correlated quantities. • It is possible to control MR of nanogranular systems through the exchange anisotropy

  9. Robust giant magnetoresistive effect type multilayer sensor

    NARCIS (Netherlands)

    Lenssen, K.M.H.; Kuiper, A.E.T.; Roozeboom, F.

    2002-01-01

    A robust Giant Magneto Resistive effect type multilayer sensor comprising a free and a pinned ferromagnetic layer, which can withstand high temperatures and strong magnetic fields as required in automotive applications. The GMR multi-layer has an asymmetric magneto-resistive curve and enables

  10. Thin-film magnetoresistive absolute position detector

    NARCIS (Netherlands)

    Groenland, J.P.J.

    1990-01-01

    The subject of this thesis is the investigation of a digital absolute posi- tion-detection system, which is based on a position-information carrier (i.e. a magnetic tape) with one single code track on the one hand, and an array of magnetoresistive sensors for the detection of the information on the

  11. Enhanced temperature-independent magnetoresistance below the ...

    Indian Academy of Sciences (India)

    The film exhibits a large nearly temperature-independent magnetoresistance around 99% in the temperature regime below p. The zero field-cooled (ZFC) and field-cooled (FC) magnetization data at 50 Oe shows irreversibility between the ZFC and FC close to the ferromagnetic transition temperature c = 250 K. The ZFC ...

  12. Investigation of structure and magnetoresistance in Co/ZnO films

    International Nuclear Information System (INIS)

    Quan Zhiyong; Xu Xiaohong; Li Xiaoli; Feng, Q.; Gehring, G. A.

    2010-01-01

    Co/ZnO films were deposited on glass substrates by magnetron sputtering at room temperature. The structure of the as-deposited films is studied by means of x-ray diffraction, x-ray photoelectron spectroscopy, and the zero-field-cooled and field-cooled magnetization curves. It is shown that the as-deposited samples consist of a mixture of regions of metallic Co and semiconducting ZnO. Large negative magnetoresistance of 26% and 11.9% are observed in the as-deposited Co/ZnO film with Co concentration of 50.7 at. % at 10 K and room temperature, respectively. Structural analysis, the temperature dependence of the conductivity and magnetoresistance reveal that the magnetoresistance is induced by spin-dependent tunneling between regions of conducting magnetic Co through the ZnO semiconducting barriers. The enhanced magnetoresistance in the low temperature regime may be related to the existence of higher-order tunneling processes between large Co regions mediated by small Co particles.

  13. Angular correlation methods

    International Nuclear Information System (INIS)

    Ferguson, A.J.

    1974-01-01

    An outline of the theory of angular correlations is presented, and the difference between the modern density matrix method and the traditional wave function method is stressed. Comments are offered on particular angular correlation theoretical techniques. A brief discussion is given of recent studies of gamma ray angular correlations of reaction products recoiling with high velocity into vacuum. Two methods for optimization to obtain the most accurate expansion coefficients of the correlation are discussed. (1 figure, 53 references) (U.S.)

  14. Analysis of dependence of fission cross section and angular anisotropy of the 235U fission fragment escape induced by neutrons of intermediate energies (epsilon < or approximately200 keV) on target nucleus orientation

    International Nuclear Information System (INIS)

    Barabanov, A.L.

    1985-01-01

    Experimental data on dependence of fission cross section Σsub(f) (epsilon) and angular anisotropy W(epsilon, 0 deg)/W(epsilon, 90 deg) of sup(235)U fission fragment escape by neutrons with energy epsilon=100 and 200 keV on orientation of target nuclei are analyzed. 235 U (Isup(πsub(0))=7/2sup(-)) nuclei were orientated at the expense of interaction of quadrupole nucleus momenta with nonuniform electric field of uranyl-rubidium nitrate crystal at crystal cooling to T=0.2 K. The analysis was carried out with three different sets of permeability factors T(epsilon). Results of the analysis weakly depend on T(epsilon) choice. It is shown that a large number of adjusting parameters (six fissionabilities γsup(f)(Jsup(π), epsilon) and six momenta sub(Jsup(π))) permit to described experimental data on Σsub(f)(epsilon) and W(epsilon, 0 deg)/W(epsilon, 90 deg), obtained at epsilon=200 keV by introducing essential dependence of γsup(f)(Jsup(π), epsilon) and sub(Jsup(π)) on Jsup(π). Estimations of fission cross sections Σsub(f)(epsilon) and angular distribution W(epsilon, n vector) up to T approximately equal to 0.01 K in two geometries of the experiment: the orientation axis is parallel and perpendicular to momentum direction p vector of incident neutrons, are conducted

  15. Measurement of angular dependence of M X-ray production cross-sections in Re, Bi and U at 5.96 keV

    International Nuclear Information System (INIS)

    Apaydin, G.; Tirasoglu, E.; Sogut, O.

    2008-01-01

    The M X-ray production differential cross sections in Re, Bi and U elements have been measured at the 5.96 keV incident photon energy in an angular range 135 - 155 degrees. The measurements were performed using a Fe 55 source and a Si(Li) detector. It appears that, after photoionization of inner shells, the vacancy state has equal population of magnetic substates and the subsequent X-ray emission is isotropic. Total M X-ray production cross sections from the decay at the 5.96 keV photon energies are found to be in good agreement with the calculated theoretical results using the theoretical values of M shell photoionization cross section. (authors)

  16. Angular dependence of sputtering yield of TiSi sub 2 layers and analysis of titanium disilicide by SIMS and SCANIIR methods

    Energy Technology Data Exchange (ETDEWEB)

    Antonov, S L; Valiev, K A; Vasiliev, A G; Orlikovsky, A A [AN SSSR, Moscow (USSR). Inst. of Physics and Technology

    1989-11-01

    The values of sputtering yields of TiSi{sub 2}, Ti and Si layers are determined for Ar{sup +} (8 keV) bombardment at angles 0-80{sup 0}. It is shown that the theoretical functions that we have suggested for TiSi{sub 2} sputtering yields from angular Ar{sup +} bombardment, which are based on models of bicomponent compounds sputtering under normal ion bombardment, are in good agreement with the experimental curve for TiSi{sub 2}. The calibration curves for the determination of TiSi{sub x} layer compositions by SIMS and SCANIIR methods (in dynamic regime) are presented. It is shown with the help of the static SIMS method (E{sub AR+} = 3 keV) that not only can the TiSi{sub x} composition be determined but the TiSi{sub 2} crystal phase can also be identified. (author).

  17. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur

    2011-08-09

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.

  18. Giant Negative Magnetoresistance Driven by Spin-Orbit Coupling at the LaAlO3/SrTiO3 Interface.

    Science.gov (United States)

    Diez, M; Monteiro, A M R V L; Mattoni, G; Cobanera, E; Hyart, T; Mulazimoglu, E; Bovenzi, N; Beenakker, C W J; Caviglia, A D

    2015-07-03

    The LaAlO3/SrTiO3 interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (dropping by 70%), attributed to a magnetic-field induced transition between interacting phases of conduction electrons with Kondo-screened magnetic impurities. Here we report on experiments over a broad temperature range, showing the persistence of the magnetoresistance up to the 20 K range--indicative of a single-particle mechanism. Motivated by a striking correspondence between the temperature and carrier density dependence of our magnetoresistance measurements we propose an alternative explanation. Working in the framework of semiclassical Boltzmann transport theory we demonstrate that the combination of spin-orbit coupling and scattering from finite-range impurities can explain the observed magnitude of the negative magnetoresistance, as well as the temperature and electron density dependence.

  19. Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors

    Directory of Open Access Journals (Sweden)

    Sergio Iván Ravelo Arias

    2013-12-01

    Full Text Available Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n, but additionally, of the fractional order α is an example of a great number of systems where its input-output behavior could be more exactly modeled by a fractional behavior. Following this aim, the present work shows the experimental ac large-signal frequency response of a family of electrical current sensors based in different spintronic conduction mechanisms. Using an ac characterization set-up the sensor transimpedance function  is obtained considering it as the relationship between sensor output voltage and input sensing current,[PLEASE CHECK FORMULA IN THE PDF]. The study has been extended to various magnetoresistance sensors based in different technologies like anisotropic magnetoresistance (AMR, giant magnetoresistance (GMR, spin-valve (GMR-SV and tunnel magnetoresistance (TMR. The resulting modeling shows two predominant behaviors, the low-pass and the inverse low-pass with fractional index different from the classical integer response. The TMR technology with internal magnetization offers the best dynamic and sensitivity properties opening the way to develop actual industrial applications.

  20. Tunneling magnetoresistance sensor with pT level 1/f magnetic noise

    Science.gov (United States)

    Deak, James G.; Zhou, Zhimin; Shen, Weifeng

    2017-05-01

    Magnetoresistive devices are important components in a large number of commercial electronic products in a wide range of applications including industrial position sensors, automotive sensors, hard disk read heads, cell phone compasses, and solid state memories. These devices are commonly based on anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR), but over the past few years tunneling magnetoresistance (TMR) has been emerging in more applications. Here we focus on recent work that has enabled the development of TMR magnetic field sensors with 1/f noise of less than 100 pT/rtHz at 1 Hz. Of the commercially available sensors, the lowest noise devices have typically been AMR, but they generally have the largest die size. Based on this observation and modeling of experimental data size and geometry dependence, we find that there is an optimal design rule that produces minimum 1/f noise. This design rule requires maximizing the areal coverage of an on-chip flux concentrator, providing it with a minimum possible total gap width, and tightly packing the gaps with MTJ elements, which increases the effective volume and decreases the saturation field of the MTJ freelayers. When properly optimized using this rule, these sensors have noise below 60 pT/rtHz, and could possibly replace fluxgate magnetometers in some applications.

  1. Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Druzhinin, A., E-mail: druzh@polynet.lviv.ua [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland); Ostrovskii, I.; Khoverko, Yu. [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland); Liakh-Kaguy, N.; Khytruk, I. [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); Rogacki, K. [International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland)

    2015-12-15

    Highlights: • Magnetoresistance in InSb whiskers with impurity concentration near MIT is studied. • SdH oscillations of transverse and longitudinal magnetoresistance are examined. • Mechanisms of electron scattering are determined • Main crystal parameters of InSb whiskers are determined. - Abstract: The study of the magnetoresistance in InSb whiskers with an impurity concentration in the vicinity to the metal-insulator phase transition, at low temperature range 4.2–77 K, and in fields, with induction up to 14 T, was conducted. The presence of Shubnikov-de Haas oscillations in both transverse and longitudinal magnetoresistance was observed. The following parameters of InSb whiskers were defined: period of oscillations 0.1 T{sup −1}, cyclotron effective mass of electrons m{sub c} ≈ 0.14m{sub o,} concentration of charge carriers 2.3 × 10{sup 17} cm{sup −3}, g-factor g{sup *} ≈ 30 and Dingle temperature T{sub D} = 14.5 K. To determine the nature of crystal defects, the electron scattering processes on the short-range potential, caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb whiskers, with defect concentration 2.9 × 10{sup 17} cm{sup −3}, are considered. The temperature dependences of electron mobility in the range 4.2–500 K were calculated.

  2. Mobility controlled linear magnetoresistance with 3D anisotropy in a layered graphene pallet

    KAUST Repository

    Zhang, Qiang

    2016-09-27

    A bulk sample of pressed graphene sheets was prepared under hydraulic pressure (similar to 150 MPa). The cross-section of the sample demonstrates a layered structure, which leads to 3D electrical transport properties with anisotropic mobility. The electrical transport properties of the sample were measured over a wide temperature (2-400 K) and magnetic field (-140 kOe <= H <= 140 kOe) range. The magnetoresistance measured at a fixed temperature can be described by R(H, theta) = R(epsilon H-theta, 0) with epsilon(theta) =(cos(2)theta + gamma(-2) sin(2)theta)(1/2), where gamma is the mobility anisotropy constant and theta is the angle between the normal of the sample plane and the magnetic field. The large linear magnetoresistance (up to 36.9% at 400 K and 140 kOe) observed at high fields is ascribed to a classical magnetoresistance caused by mobility fluctuation (Delta mu). The magnetoresistance value at 140 kOe was related to the average mobility () because of the condition Delta mu < . The carrier concentration remained constant and the temperature-dependent resistivity was proportional to the average mobility, as verified by Kohler\\'s rule. Anisotropic dephasing length was deduced from weak localization observed at low temperatures.

  3. Magnetoresistance anomalies in ultra-thin granular YBa2Cu3O7−δ bridges

    International Nuclear Information System (INIS)

    Levi, D.; Shaulov, A.; Koren, G.; Yeshurun, Y.

    2013-01-01

    Highlights: •Negative magnetoresistance slope in the Tesla regime is observed at low temperatures. •Phase slips explains the observed magnetoresistance at high temperatures. •Quasiparticles tunneling explains the negative slope. -- Abstract: We report on magnetoresistance measurements in 10 nm thick and submicron-wide granular YBa 2 Cu 3 O 7−δ bridges. The results show a strong dependence of the resistance on the magnetic field at low fields crossing over to a relatively weak field dependence at high fields. The field derivative of the resistance at high fields decreases as the temperature is lowered and eventually changes sign, exhibiting a negative slope in a wide field range in the Tesla regime. This negative slope is sensitive to the bias current, turning to be positive as the bias current increases. This complex magnetoresistance behavior is attributed to both phase slips in a distribution of strongly and weakly linked superconducting grains, and tunneling of quasiparticles between grains. The latter dominates at low temperatures and high fields, giving rise to the negative magnetoresistance slope

  4. Rotations and angular momentum

    International Nuclear Information System (INIS)

    Nyborg, P.; Froyland, J.

    1979-01-01

    This paper is devoted to the analysis of rotational invariance and the properties of angular momentum in quantum mechanics. In particular, the problem of addition of angular momenta is treated in detail, and tables of Clebsch-Gordan coefficients are included

  5. Angular Acceleration without Torque?

    Science.gov (United States)

    Kaufman, Richard D.

    2012-01-01

    Hardly. Just as Robert Johns qualitatively describes angular acceleration by an internal force in his article "Acceleration Without Force?" here we will extend the discussion to consider angular acceleration by an internal torque. As we will see, this internal torque is due to an internal force acting at a distance from an instantaneous center.

  6. Giant magnetoresistance in CrFeMn alloys

    International Nuclear Information System (INIS)

    Xu, W.M.; Zheng, P.; Chen, Z.J.

    1997-01-01

    The electrical resistance and longitudinal magnetoresistance of Cr 75 (Fe x Mn 1-x ) 25 alloys, x=0.64, 0.72, are studied in the temperature range 1.5-270 K in applied field up to 7.5 T. The magnetoresistance is negative and strongly correlated with the spin reorientation. In the temperature range where the antiferromagnetic and ferromagnetic domains coexist, the samples display giant magnetoresistance which follows a H n -law at high field. (orig.)

  7. Study of temperature dependence and angular distribution of poly(9,9-dioctylfluorene) polymer films deposited by matrix-assisted pulsed laser evaporation (MAPLE)

    International Nuclear Information System (INIS)

    Caricato, A.P.; Anni, M.; Manera, M.G.; Martino, M.; Rella, R.; Romano, F.; Tunno, T.; Valerini, D.

    2009-01-01

    Poly(9,9-dioctylfluorene) (PFO) polymer films were deposited by matrix-assisted pulsed laser evaporation (MAPLE) technique. The polymer was diluted (0.5 wt%) in tetrahydrofuran and, once cooled to liquid nitrogen temperature, it was irradiated with a KrF excimer laser. 10,000 laser pulses were used to deposit PFO films on Si substrates at different temperatures (-16, 30, 50 and 70 deg. C). One PFO film was deposited with 16,000 laser pulses at a substrate temperature of 50 deg. C. The morphology, optical and structural properties of the films were investigated by SEM, AFM, PL and FTIR spectroscopy. SEM inspection showed different characteristic features on the film surface, like deflated balloons, droplets and entangled polymer filaments. The roughness of the films was, at least partially, controlled by substrate heating, which however had the effect to reduce the deposition rate. The increase of the laser pulse number modified the target composition and increased the surface roughness. The angular distribution of the material ejected from the target confirmed the forward ejection of the target material. PFO films presented negligible modification of the chemical structure respect to the bulk material.

  8. Mass dependence of spectral and angular distributions of Cherenkov radiation from relativistic isotopes in solid radiators and its possible application as mass selector

    Science.gov (United States)

    Bogdanov, O. V.; Rozhkova, E. I.; Pivovarov, Yu. L.; Kuzminchuk-Feuerstein, N.

    2018-02-01

    The first proof of principle experiment with a prototype of a Time-of-Flight (TOF) - Cherenkov detector of relativistic heavy ions (RHI) exploiting a liquid Iodine Naphthalene radiator has been performed at Cave C at GSI (Darmstadt, Germany). A conceptual design for a liquid Cherenkov detector was proposed as a prototype for the future TOF measurements at the Super-FRS by detection of total number of Cherenkov photons. The ionization energy loss of RHI in a liquid radiator decreases only slightly this number, while in a solid radiator changes sufficiently not the total number of ChR photons, but ChR angular and spectral distributions. By means of computer simulations, we showed that these distributions are very sensitive to the isotope mass, due to different stopping powers of isotopes with initial equal relativistic factors. The results of simulations for light (Li, Be) and heavy (Xe) isotopes at 500-1000 MeV/u are presented indicating the possibility to use the isotopic effect in ChR of RHI as the mass selector.

  9. Semiclassical theory of magnetoresistance in positionally disordered organic semiconductors

    Science.gov (United States)

    Harmon, N. J.; Flatté, M. E.

    2012-02-01

    A recently introduced percolative theory of unipolar organic magnetoresistance is generalized by treating the hyperfine interaction semiclassically for an arbitrary hopping rate. Compact analytic results for the magnetoresistance are achievable when carrier hopping occurs much more frequently than the hyperfine field precession period. In other regimes the magnetoresistance can be straightforwardly evaluated numerically. Slow and fast hopping magnetoresistance are found to be uniquely characterized by their line shapes. We find that the threshold hopping distance is analogous a phenomenological two-site model's branching parameter, and that the distinction between slow and fast hopping is contingent on the threshold hopping distance.

  10. Quark Orbital Angular Momentum

    Directory of Open Access Journals (Sweden)

    Burkardt Matthias

    2015-01-01

    Full Text Available Definitions of orbital angular momentum based on Wigner distributions are used as a framework to discuss the connection between the Ji definition of the quark orbital angular momentum and that of Jaffe and Manohar. We find that the difference between these two definitions can be interpreted as the change in the quark orbital angular momentum as it leaves the target in a DIS experiment. The mechanism responsible for that change is similar to the mechanism that causes transverse single-spin asymmetries in semi-inclusive deep-inelastic scattering.

  11. Magnetoresistance effect in permalloy nanowires with various types of notches

    Directory of Open Access Journals (Sweden)

    Y. Gao

    2018-05-01

    Full Text Available Suppressing the stochastic domain wall (DW motion in magnetic nanowires is of great importance for designing DW-related spintronic devices. In this work, we have investigated the pinning/depinning processes of DWs in permalloy nanowires with three different types of notches by using longitudinal magnetoresistance (MR measurement. The averaged MR curves demonstrate that the stochastic DW depinning is suppressed partly or even completely by a transversely asymmetric notch. The single-shot MR curves show that how the resistance changes with the applied field also depends strongly on the notch type while the DW is pinned around the notch. In the case of two depinning fields, larger (smaller change of resistance always corresponds to larger (smaller depinning field, regardless of the notch type. These phenomena can be understood by that the spin structure around the notch changes differently with the notch type when the DW is traveling through the notch.

  12. Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions

    KAUST Repository

    Useinov, Arthur

    2010-05-03

    We present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Molecular beam epitaxy of single crystal colossal magnetoresistive material

    International Nuclear Information System (INIS)

    Eckstein, J.N.; Bozovic, I.; Rzchowski, M.; O'Donnell, J.; Hinaus, B.; Onellion, M.

    1996-01-01

    The authors have grown films of (LaSr)MnO 3 (LSMO) and (LaCa)MnO 3 (LCMO) using atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Depending on growth conditions, substrate lattice constant and the exact cation stoichiometry, the films are either pseudomorphic or strain relaxed. The pseudomorphic films show atomically flat surfaces, with a unit cell terrace structure that is a replica of that observed on the slightly vicinal substrates, while the strain relaxed films show bumpy surfaces correlated with a dislocation network. All films show tetragonal structure and exhibit anisotropic magnetoresistance, with a low field response, (1/R)(dR/dH) as large as 5 T -1

  14. Magnetoresistance effect in permalloy nanowires with various types of notches

    Science.gov (United States)

    Gao, Y.; You, B.; Wang, J.; Yuan, Y.; Wei, L. J.; Tu, H. Q.; Zhang, W.; Du, J.

    2018-05-01

    Suppressing the stochastic domain wall (DW) motion in magnetic nanowires is of great importance for designing DW-related spintronic devices. In this work, we have investigated the pinning/depinning processes of DWs in permalloy nanowires with three different types of notches by using longitudinal magnetoresistance (MR) measurement. The averaged MR curves demonstrate that the stochastic DW depinning is suppressed partly or even completely by a transversely asymmetric notch. The single-shot MR curves show that how the resistance changes with the applied field also depends strongly on the notch type while the DW is pinned around the notch. In the case of two depinning fields, larger (smaller) change of resistance always corresponds to larger (smaller) depinning field, regardless of the notch type. These phenomena can be understood by that the spin structure around the notch changes differently with the notch type when the DW is traveling through the notch.

  15. Extremely large magnetoresistance and electronic structure of TmSb

    Science.gov (United States)

    Wang, Yi-Yan; Zhang, Hongyun; Lu, Xiao-Qin; Sun, Lin-Lin; Xu, Sheng; Lu, Zhong-Yi; Liu, Kai; Zhou, Shuyun; Xia, Tian-Long

    2018-02-01

    We report the magnetotransport properties and the electronic structure of TmSb. TmSb exhibits extremely large transverse magnetoresistance and Shubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field. Interestingly, the split of Fermi surfaces induced by the nonsymmetric spin-orbit interaction has been observed from SdH oscillation. The analysis of the angle-dependent SdH oscillation illustrates the contribution of each Fermi surface to the conductivity. The electronic structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrates a gap at the X point and the absence of band inversion. Combined with the trivial Berry phase extracted from SdH oscillation and the nearly equal concentrations of electron and hole from Hall measurements, it is suggested that TmSb is a topologically trivial semimetal and the observed XMR originates from the electron-hole compensation and high mobility.

  16. Theoretical Prediction of a Giant Anisotropic Magnetoresistance in Carbon Nanoscrolls.

    Science.gov (United States)

    Chang, Ching-Hao; Ortix, Carmine

    2017-05-10

    Snake orbits are trajectories of charge carriers curving back and forth that form at an interface where either the magnetic field direction or the charge carrier type are inverted. In ballistic samples, their presence is manifested in the appearance of magnetoconductance oscillations at small magnetic fields. Here we show that signatures of snake orbits can also be found in the opposite diffusive transport regime. We illustrate this by studying the classical magnetotransport properties of carbon tubular structures subject to relatively weak transversal magnetic fields where snake trajectories appear in close proximity to the zero radial field projections. In carbon nanoscrolls, the formation of snake orbits leads to a strongly directional dependent positive magnetoresistance with an anisotropy up to 80%.

  17. Large linear magnetoresistance in a new Dirac material BaMnBi2

    Science.gov (United States)

    Wang, Yi-Yan; Yu, Qiao-He; Xia, Tian-Long

    2016-10-01

    Dirac semimetal is a class of materials that host Dirac fermions as emergent quasi-particles. Dirac cone-type band structure can bring interesting properties such as quantum linear magnetoresistance and large mobility in the materials. In this paper, we report the synthesis of high quality single crystals of BaMnBi2 and investigate the transport properties of the samples. BaMnBi2 is a metal with an antiferromagnetic transition at T N = 288 K. The temperature dependence of magnetization displays different behavior from CaMnBi2 and SrMnBi2, which suggests the possible different magnetic structure of BaMnBi2. The Hall data reveals electron-type carriers and a mobility μ(5 K) = 1500 cm2/V·s. Angle-dependent magnetoresistance reveals the quasi-two-dimensional (2D) Fermi surface in BaMnBi2. A crossover from semiclassical MR ˜ H 2 dependence in low field to MR ˜ H dependence in high field, which is attributed to the quantum limit of Dirac fermions, has been observed in magnetoresistance. Our results indicate the existence of Dirac fermions in BaMnBi2. Project supported by the National Natural Science Foundation of China (Grant No. 11574391), the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China (Grant No. 14XNLQ07).

  18. Large linear magnetoresistance in a new Dirac material BaMnBi2

    International Nuclear Information System (INIS)

    Wang Yi-Yan; Yu Qiao-He; Xia Tian-Long

    2016-01-01

    Dirac semimetal is a class of materials that host Dirac fermions as emergent quasi-particles. Dirac cone-type band structure can bring interesting properties such as quantum linear magnetoresistance and large mobility in the materials. In this paper, we report the synthesis of high quality single crystals of BaMnBi 2 and investigate the transport properties of the samples. BaMnBi 2 is a metal with an antiferromagnetic transition at T N = 288 K. The temperature dependence of magnetization displays different behavior from CaMnBi 2 and SrMnBi 2 , which suggests the possible different magnetic structure of BaMnBi 2 . The Hall data reveals electron-type carriers and a mobility μ (5 K) = 1500 cm 2 /V·s. Angle-dependent magnetoresistance reveals the quasi-two-dimensional (2D) Fermi surface in BaMnBi 2 . A crossover from semiclassical MR ∼ H 2 dependence in low field to MR ∼ H dependence in high field, which is attributed to the quantum limit of Dirac fermions, has been observed in magnetoresistance. Our results indicate the existence of Dirac fermions in BaMnBi 2 . (rapid communication)

  19. Tunneling magnetoresistance of ultra-thin Co-SiO2 granular films with narrow current channels

    International Nuclear Information System (INIS)

    Honda, S.; Hirata, M.; Ishimaru, M.

    2005-01-01

    We have constructed the tunneling magnetoresistance (TMR) junction of AuCr/SiO 2 /Co-SiO 2 /SiO 2 /AuCr with narrow current channels, where the TMR occurs in the Co-SiO 2 layer with 10-50 nm thickness. The magnetic properties are independent of thickness, while the TMR properties depend fairly on thickness. The current (I)-bias voltage (V B ) curve is nonlinear, namely the differential resistivity decreases with increasing V B , and also the magnetoresistance ratio decreases

  20. Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers.

    Science.gov (United States)

    Kim, Dong-Jun; Jeon, Chul-Yeon; Choi, Jong-Guk; Lee, Jae Wook; Surabhi, Srivathsava; Jeong, Jong-Ryul; Lee, Kyung-Jin; Park, Byong-Guk

    2017-11-09

    Electric generation of spin current via spin Hall effect is of great interest as it allows an efficient manipulation of magnetization in spintronic devices. Theoretically, pure spin current can be also created by a temperature gradient, which is known as spin Nernst effect. Here, we report spin Nernst effect-induced transverse magnetoresistance in ferromagnet/non-magnetic heavy metal bilayers. We observe that the magnitude of transverse magnetoresistance in the bilayers is significantly modified by heavy metal and its thickness. This strong dependence of transverse magnetoresistance on heavy metal evidences the generation of thermally induced pure spin current in heavy metal. Our analysis shows that spin Nernst angles of W and Pt have the opposite sign to their spin Hall angles. Moreover, our estimate implies that the magnitude of spin Nernst angle would be comparable to that of spin Hall angle, suggesting an efficient generation of spin current by the spin Nernst effect.

  1. Optical Angular Momentum

    International Nuclear Information System (INIS)

    Arimondo, Ennio

    2004-01-01

    For many years the Institute of Physics has published books on hot topics based on a collection of reprints from different journals, including some remarks by the editors of each volume. The book on Optical Angular Momentum, edited by L Allen, S M Barnett and M J Padgett, is a recent addition to the series. It reproduces forty four papers originally published in different journals and in a few cases it provides direct access to works not easily accessible to a web navigator. The collection covers nearly a hundred years of progress in physics, starting from an historic 1909 paper by Poynting, and ending with a 2002 paper by Padgett, Barnett and coworkers on the measurement of the orbital angular momentum of a single photon. The field of optical angular momentum has expanded greatly, creating an interdisciplinary attraction for researchers operating in quantum optics, atomic physics, solid state physics, biophysics and quantum information theory. The development of laser optics, especially the control of single mode sources, has made possible the specific design of optical radiation modes with a high degree of control on the light angular momentum. The editors of this book are important figures in the field of angular momentum, having contributed to key progress in the area. L Allen published an historical paper in 1999, he and M J Padgett (together with M Babiker) produced few years ago a long review article which is today still the most complete basic introduction to the angular momentum of light, while S M Barnett has contributed several high quality papers to the progress of this area of physics. The editors' choice provides an excellent overview to all readers, with papers classified into eight different topics, covering the basic principles of the light and spin and orbital angular momentum, the laboratory tools for creating laser beams carrying orbital angular momentum, the optical forces and torques created by laser beams carrying angular momentum on

  2. Angular trap for macroparticles

    International Nuclear Information System (INIS)

    Aksyonov, D.S.

    2013-01-01

    Properties of angular macroparticle traps were investigated in this work. These properties are required to design vacuum arc plasma filters. The correlation between trap geometry parameters and its ability to absorb macroparticles were found. Calculations allow one to predict the behaviour of filtering abilities of separators which contain such traps in their design. Recommendations regarding the use of angular traps in filters of different builds are given.

  3. Dependence of black fragment azimuthal and projected angular distributions on polar angle in silicon-emulsion collisions at 4.5A GeV/c

    International Nuclear Information System (INIS)

    Liu Fuhu; Abd Allah, Nabil N.; Singh, B.K.

    2004-01-01

    The experimental results of dependence of black fragment azimuth (φ) and projected angle (ψ) distributions on polar angle θ in silicon-emulsion collisions at 4.5A GeV/c (the Dubna momentum) are reported. There are two regions of enhancement around φ=±90 deg. for different θ ranges. These enhancements are due to directed (v 1 ) and elliptic (v 2 ) flows. The v 1 and v 2 dependence of values on θ shows that the directed flow is weak and the elliptic flow is strong in these collisions. A multisource ideal gas model is used to describe the experimental results of dependence. The Monte Carlo calculated results are approximately in agreement with the experimental data

  4. Study of domain wall propagation in nanostructured CoPt multilayers by using antisymmetric magnetoresistance

    International Nuclear Information System (INIS)

    Rodriguez-Rodriguez, G; Perez-Junquera, A; Hierro-Rodriguez, A; Montenegro, N; Alameda, J M; Velez, M; Menendez, J L; Ravelosona, D

    2010-01-01

    Domain wall propagation has been studied in perpendicular anisotropy CoPt multilayers patterned by e-beam lithography into 5 μm wide wires. Positive and negative peaks appear in time resolved magnetoresistance curves, associated to the different directions of domain wall propagation along the wires. The field dependence of domain wall velocity is well described by a creep model of a 1D wall in the presence of weak disorder with critical exponent μ=1/4.

  5. Extraordinary Magnetoresistance Effect in Semiconductor/Metal Hybrid Structure

    KAUST Repository

    Sun, Jian

    2013-06-27

    In this dissertation, the extraordinary magnetoresistance (EMR) effect in semiconductor/metal hybrid structures is studied to improve the performance in sensing applications. Using two-dimensional finite element simulations, the geometric dependence of the output sensitivity, which is a more relevant parameter for EMR sensors than the magnetoresistance (MR), is studied. The results show that the optimal geometry in this case is different from the geometry reported before, where the MR ratio was optimized. A device consisting of a semiconductor bar with length/width ratio of 5~10 and having only 2 contacts is found to exhibit the highest sensitivity. A newly developed three-dimensional finite element model is employed to investigate parameters that have been neglected with the two dimensional simulations utilized so far, i.e., thickness of metal shunt and arbitrary semiconductor/metal interface. The simulations show the influence of those parameters on the sensitivity is up to 10 %. The model also enables exploring the EMR effect in planar magnetic fields. In case of a bar device, the sensitivity to planar fields is about 15 % to 20 % of the one to perpendicular fields. 5 A “top-contacted” structure is proposed to reduce the complexity of fabrication, where neither patterning of the semiconductor nor precise alignment is required. A comparison of the new structure with a conventionally fabricated device shows that a similar magnetic field resolution of 24 nT/√Hz is obtained. A new 3-contact device is developed improving the poor low-field sensitivity observed in conventional EMR devices, resulting from its parabolic magnetoresistance response. The 3-contact device provides a considerable boost of the low field response by combining the Hall effect with the EMR effect, resulting in an increase of the output sensitivity by 5 times at 0.01 T compared to a 2-contact device. The results of this dissertation provide new insights into the optimization of EMR devices

  6. Stripe domains and magnetoresistance in thermally deposited nickel films

    International Nuclear Information System (INIS)

    Sparks, P.D.; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C.

    2004-01-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21±0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane

  7. Stripe domains and magnetoresistance in thermally deposited nickel films

    Science.gov (United States)

    Sparks, P. D.; Stern, N. P.; Snowden, D. S.; Kappus, B. A.; Checkelsky, J. G.; Harberger, S. S.; Fusello, A. M.; Eckert, J. C.

    2004-05-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21+/-0.02 up to 120nm thickness. There is a negative magnetoresistance for fields out of the plane.

  8. Stripe domains and magnetoresistance in thermally deposited nickel films

    Energy Technology Data Exchange (ETDEWEB)

    Sparks, P.D. E-mail: sparks@hmc.edu; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C

    2004-05-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21{+-}0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane.

  9. Magnetoresistance in molybdenite (MoS2) crystals

    International Nuclear Information System (INIS)

    Chakraborty, B.R.; Dutta, A.K.

    1975-01-01

    The principal magnetoresistance ratios of molybdenite (MoS 2 ), the naturally occurring semiconducting crystal, have been investigated at magnetic fields ranging from 4.5 KOe and within the temperature range 300 0 K to 700 0 K. Unlike some previous observations, magnetoresistance has been found to be negative. (author)

  10. Colossal Magnetoresistance in La-Y-Ca-Mn-O Films

    NARCIS (Netherlands)

    Chen, L.H.; Tiefel, T.H.; Jin, S.; Palstra, T.T.M.; Ramesh, R.; Kwon, C.

    1996-01-01

    Magnetoresistance behavior of La0.60Y0.07CaMnOx, thin films epitaxially grown on LaAlO3 has been investigated. The films exhibit colossal magnetoresistance with the MR ratio in excess of 10^8% at ~60K, H = 7T, which is the highest ever reported for thin film manganites. The partial substitution of

  11. Tunneling anisotropic magnetoresistance: A spin-valve-like tunnel magnetoresistance using a single magnetic layer

    Czech Academy of Sciences Publication Activity Database

    Gould, C.; Rüster, C.; Jungwirth, Tomáš; Girgis, E.; Schott, G. M.; Giraud, R.; Brunner, K.; Schmidt, G.; Molenkamp, L. W.

    2004-01-01

    Roč. 93, č. 11 (2004), 117203/1-117203/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : semiconductor spintronics * tunneling anisotropic magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.218, year: 2004

  12. Determination of g-tensors of low-symmetry Nd{sup 3+} centers in LiNbO{sub 3} by rectification of angular dependence of electron paramagnetic resonance spectra

    Energy Technology Data Exchange (ETDEWEB)

    Grachev, V., E-mail: grachev@physics.montana.edu; Malovichko, G. [Physics Department, Montana State University, Bozeman, Montana 59717 (United States); Munro, M. [Quantel Laser, Bozeman, Montana 59715 (United States); Kokanyan, E. [Institute of Physical Researches, Ashtarak (Armenia)

    2015-07-28

    Two procedures for facilitation of line tracing and deciphering of complicated spectra of electron paramagnetic resonance (EPR) were developed: a correction of microwave frequencies for every orientation of external magnetic field on the base of known values of g-tensor components for a reference paramagnetic center and followed rectification of measured angular dependences using plots of effective deviation of g{sup 2}-factors of observed lines from effective g{sup 2}-factors of the reference center versus angles or squared cosines of angles describing magnetic field orientations. Their application to EPR spectra of nearly stoichiometric lithium niobate crystals doped with neodymium allowed identifying two axial and six different low-symmetry Nd{sup 3+} centers, to determine all components of their g-tensors, and to propose common divacancy models for a whole family of Nd{sup 3+} centers.

  13. Effects of magnetic and structural properties on magnetoresistance in amorphous TbFeCo

    International Nuclear Information System (INIS)

    Yumoto, S.; Hidaka, Y.; Okada, O.

    1990-01-01

    An extraordinary magnetoresistance effect, linearly dependent on the external magnetic field, is observed in amorphous TbFeCo films. The electrical resistance jumps by δρ at magnetization reversal. δρ depends on Tb concentration and it becomes nearly zero at about Tb 26 at. % concentration. To clarify the Tb concentration dependence of δρ, the magnetic properties and the heat treatment effect are examined. It is found that the magnetic anisotropy field (H k ) is maximum at about Tb 26 at. % and the gradient of linear magnetoresistance, δρ/(ρ 0 H c ), is proportional to the -H k + const, where ρ 0 is the electric resistance in zero field, H c is the coercive force, and the constant is about 100 kOe. The structural relaxation, a coercive force change by the heat treatment up to 200 degree C, is examined. It is found that as δρ/(ρ 0 H c ) in the as-sputtered state decreases, the coercive force change by the heat treatment decreases. The coercive force change is minimum at about Tb 26 at. %, where δρ/(ρ 0 H c ) becomes zero. These results mean that linear magnetoresistance is related to structure relaxation by heat treatment. The δρ disappearance at about Tb 26 at. % is based on the stable structure against heat treatment and the largest magnetic anisotropy field

  14. An automatic measuring system for mapping of spectral and angular dependence of direct and diffuse solar radiation; Et automatisk maalesystem for kartlegging av vinkel- og spektralfordeling av direkte og diffus solstraaling

    Energy Technology Data Exchange (ETDEWEB)

    Grandum, Oddbjoern

    1997-12-31

    In optimizing solar systems, it is necessary to know the spectral and angular dependence of the radiation. The general nonlinear character of most solar energy systems accentuates this. This thesis describes a spectroradiometer that will measure both the direct component of the solar radiation and the angular dependence of the diffuse component. Radiation from a selected part of the sky is transported through a movable set of tube sections on to a stationary set of three monochromators with detectors. The beam transport system may effectively be looked upon as a single long tube aimed at a particular spot in the sky. The half value of the effective opening angle is 1.3{sup o} for diffuse radiation and 2.8{sup o} for direct radiation. The whole measurement process is controlled and operated by a PC and normally runs without manual attention. The instrument is built into a caravan. The thesis describes in detail the experimental apparatus, calibration and measurement accuracies. To map the diffuse radiation, one divides the sky into 26 sectors of equal solid angle. A complete measurement cycle is then made at a random point within each sector. These measurements are modelled by fitting to spherical harmonics, enforcing symmetry around the solar direction and the horizontal plane. The direct radiation is measured separately. Also the circumsolar sector is given special treatment. The measurements are routinely checked against global radiation measured in parallel by a standard pyranometer, and direct solar radiation by a pyrheliometer. An extensive improvement programme is being planned for the instrument, including the use of a photomultiplier tube to measure the UV part of the spectrum, a diode array for the 400-1100 nm range, and use of a Ge diode for the 1000-1900 nm range. 78 refs., 90 figs., 31 tabs.

  15. Large magnetoresistance effect in nitrogen-doped silicon

    Directory of Open Access Journals (Sweden)

    Tao Wang

    2017-05-01

    Full Text Available In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications.

  16. Electrically tuned magnetic order and magnetoresistance in a topological insulator.

    Science.gov (United States)

    Zhang, Zuocheng; Feng, Xiao; Guo, Minghua; Li, Kang; Zhang, Jinsong; Ou, Yunbo; Feng, Yang; Wang, Lili; Chen, Xi; He, Ke; Ma, Xucun; Xue, Qikun; Wang, Yayu

    2014-09-15

    The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investigate the transport properties of a ferromagnetic topological insulator thin film fabricated into a field effect transistor device. We observe a complex evolution of gate-tuned magnetoresistance, which is positive when the Fermi level lies close to the Dirac point but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture, but is intimately correlated with the gate-tuned magnetic order. The underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative magnetoresistance. The simultaneous electrical control of magnetic order and magnetoresistance facilitates future topological insulator based spintronic devices.

  17. Large magnetoresistance in intercalated Cu oxides

    OpenAIRE

    Grigoryan, L.; Furusawa, M.; Hori, H.; Tokumoto, M.

    1997-01-01

    Magnetism and electrical resistance as a function of magnetic field, temperature, and chemical composition are studied in Cu oxides intercalated with metal phthalocyanines MPc, where M is Fe or Ni, and Pc is C_H_N_. An unusually large positive magnetoresistance (MR) of ~ 1200% is observed in FePc-intercalated Bi_Sr_Ca_Cu_O_ samples with two Cu-O layers in the unit cell (n=2). The magnitude of the MR decreased to 40% and ~ 0% in the FePc-intercalated n=3 and n=4 samples, respectively, and to ~...

  18. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  19. Resistivity and magnetoresistance studies of Nb3Ir and V3Sb compounds

    International Nuclear Information System (INIS)

    Ghosh, M.; Barman, A.; Das, A.; Meikap, A.K.; De, S.K.; Chatterjee, S.

    1997-01-01

    We have performed measurements of electrical resistivity and magnetoresistivity of the compounds Nb 3 Ir and V 3 Sb in the temperature range 1.8 K ≤ T ≤ 300 K in absence as well as in presence of a magnetic field up to 7.7 T. At high temperature the resistivity shows a linear behaviour whereas the low temperature resistivity shows a T 2 behaviour. The data are fitted to several theories in order to explain the anomalous behaviour of the resistivity. The simple s-d scattering model is not adequate to offer a proper explanation for the positive magnetoresistance. The enhancement of the coefficient A of the T 2 term and the deviation from the quadratic field dependence of the resistivity may be due to the anisotropy in the compounds. (orig.)

  20. Effects of magnetic barriers on transport and magnetoresistance in a two-dimensional electronic device

    Energy Technology Data Exchange (ETDEWEB)

    He, H. L.; Zhang, X. W., E-mail: hedge80@sina.com.cn; Dai, B.; Ren, Y. [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Wang, Z. P. [Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900 (China)

    2016-05-15

    We study theoretically the giant magnetoresistance (GMR) effect of 2-dimensional electron system (2DES) by the transfer matrix method. To produce the inhomogeneous magnetic field, two magnetic strips are pre-deposited on the surface of 2DES. In our work, we fix the magnetization M in one magnetic strip and adjust the tilting angle θ of magnetization in the other. The result shows that the electronic transmission and conductance vary significantly for different θ. The minimum conductance can be obtained at θ = π which corresponds to the magnetization anti-parallel alignment. The magnetoresistance ratio (MRR) calculation also indicates we would get the maximum in that case. Furthermore, we consider the magnetization M dependence of MRR in this work. When M increases, MRR peaks get higher and broader and more numbers of peaks can be observed. These results offer an alternative to get a tunable GMR device which can be controlled by adjusting the magnetization M and the magnetized angle θ.

  1. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    KAUST Repository

    Zhang, Y.

    2016-07-20

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  2. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    KAUST Repository

    Zhang, Y.; Mi, W. B.; Zhang, Xixiang

    2016-01-01

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  3. Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier

    Science.gov (United States)

    Althammer, Matthias; Mishra, Rohan; Borisevich, Albina J.; Singh, Amit Vikam; Keshavarz, Sahar; Yurtisigi, Mehmet Kenan; Leclair, Patrick; Gupta, Arunava

    We experimentally investigate the structural, magnetic and electrical transport properties of La0.67Sr0.33MnO3 based magnetic tunnel junctions with a SrSnO3 barrier. Our results show that despite the high density of defects in the strontium stannate barrier the observed tunnel magnetoresistance is comparable to tunnel junctions with a better lattice matched SrTiO3 barrier, reaching values of up to 350 % at T = 5 K . Further analysis of the current-voltage characteristics of the junction and the bias voltage dependence of the observed tunnel magnetoresistance show a decrease of the TMR with increasing bias voltage. Our results suggest that by reducing the structural defects in the strontium stannate barrier, even larger TMR ratios might be possible in the future. We gratefully acknowledge financial support via NSF-ECCS Grant No. 1509875.

  4. Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

    Science.gov (United States)

    Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo

    2017-10-26

    The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

  5. Magnetoresistance of drop-cast film of cobalt-substituted magnetite nanocrystals.

    Science.gov (United States)

    Kohiki, Shigemi; Nara, Koichiro; Mitome, Masanori; Tsuya, Daiju

    2014-10-22

    An oleic acid-coated Fe2.7Co0.3O4 nanocrystal (NC) self-assembled film was fabricated via drop casting of colloidal particles onto a three-terminal electrode/MgO substrate. The film exhibited a large coercivity (1620 Oe) and bifurcation of the zero-field-cooled and field-cooled magnetizations at 300 K. At 10 K, the film exhibited both a Coulomb blockade due to single electron charging as well as a magnetoresistance of ∼-80% due to spin-dependent electron tunneling. At 300 K, the film also showed a magnetoresistance of ∼-80% due to hopping of spin-polarized electrons. Enhanced magnetic coupling between adjacent NCs and the large coercivity resulted in a large spin-polarized current flow even at 300 K.

  6. Magnetoresistance and Curie temperature of GaAs semiconductor doped with Mn ions

    International Nuclear Information System (INIS)

    Yalishev, V.Sh.

    2006-02-01

    Key words: diluted magnetic semiconductors, magnetoresistance, ferromagnetism, ionic implantation, molecular-beam epitaxy, magnetic clusters, Curie temperature. Subjects of the inquiry: Diluted magnetic semiconductor GaAs:Mn. Aim of the inquiry: determination of the possibility of the increase of Curie temperature in diluted magnetic semiconductors based on GaAs doped with Mn magnetic impurity. Method of inquiry: superconducting quantum interference device (SQUID), Hall effect, magnetoresistance, atomic and magnetic force microscopes. The results achieved and their novelty: 1. The effect of the additional doping of Ga 0,965 Mn 0,035 As magnetic epitaxial layers by nonmagnetic impurity of Be on on the Curie temperature was revealed. 2. The exchange interaction energy in the investigated Ga 0,965 Mn 0,035 As materials was determined by the means of the magnetic impurity dispersion model from the temperature dependence of the resistivity measurements. 3. The effect of magnetic clusters dimensions and illumination on the magnetoresistance of GaAs materials containing nano-dimensional magnetic clusters was studied for the first time. Practical value: Calculated energy of the exchange interaction between local electrons of magnetic ions and free holes in Ga 1-x Mn x As magnetic semiconductors permitted to evaluate the theoretical meaning of Curie temperature depending on concentration of free holes and to compare it with experimental data. Sphere of usage: micro- and nano-electronics, solid state physics, physics of semiconductors, magnetic materials physics, spin-polarized current sources. (author)

  7. Theory of magnetoresistance of organic molecular tunnel junctions with nonmagnetic electrodes

    Science.gov (United States)

    Shi, Sha; Xie, Zuoti; Liu, Feilong; Smith, Darryl L.; Frisbie, C. Daniel; Ruden, P. Paul

    2017-04-01

    Large room-temperature magnetoresistance observed for devices composed of self-assembled monolayers of different oligophenylene thiols sandwiched between gold contacts has recently been reported [Z. Xie, S. Shi, F. Liu, D. L. Smith, P. P. Ruden, and C. D. Frisbie, ACS Nano 10, 8571 (2016), 10.1021/acsnano.6b03853]. The transport mechanism through the organic molecules was determined to be nonresonant tunneling. To explain this kind of magnetoresistance, we develop an analytical model based on the interaction of the tunneling charge carrier with an unpaired charge carrier populating a contact-molecule interface state. The Coulomb interaction between carriers causes the transmission coefficients to depend on their relative spin orientation. Singlet and triplet pairing of the tunneling and the interface carriers thus correspond to separate conduction channels with different transmission probabilities. Spin relaxation enabling transitions between the different channels, and therefore tending to maximize the tunneling current for a given applied bias, can be suppressed by relatively small magnetic fields, leading to large magnetoresistance. Our model elucidates how the Coulomb interaction gives rise to transmission probabilities that depend on spin and how an applied magnetic field can inhibit transitions between different spin configurations.

  8. Impacts of the Angular Dependence of the Solar Diffuser BRDF Degradation Factor on the SNPP VIIRS Reflective Solar Band On-Orbit Radiometric Calibration

    Science.gov (United States)

    Lei, Ning; Xiong, Xiaoxiong

    2016-01-01

    Using an onboard sunlit solar diffuser (SD) as the primary radiance source, the visible infrared imaging radiometer suite (VIIRS) on the Suomi National Polar-orbiting Partnership satellite regularly performs radiometric calibration of its reflective solar bands (RSBs). The SD bidirectional reflectance distribution function (BRDF) value decreases over time. A numerical degradation factor is used to quantify the degradation and is determined by an onboard SD stability monitor (SDSM), which observes the sun and the sunlit SD at almost the same time. We had shown previously that the BRDF degradation factor was angle-dependent. Consequently, due to that the SDSM and the RSB view the SD at very different angles relative to both the solar and the SD surface normal vectors, directly applying the BRDF degradation factor determined by the SDSM to the VIIRS RSB calibration can result in large systematic errors. We develop a phenomenological model to calculate the BRDF degradation factor for the RSB SD view from the degradation factor for the SDSM SD view. Using the yearly undulations observed in the VIIRS detector gains for the M1-M4 bands calculated with the SD BRDF degradation factor for the SDSM SD view and the difference between the VIIRS detector gains calculated from the SD and the lunar observations, we obtain the model parameter values and thus establish the relation between the BRDF degradation factors for the RSB and the SDSM SD view directions.

  9. One-dimensional photonic crystals with a planar oriented nematic layer: Temperature and angular dependence of the spectra of defect modes

    International Nuclear Information System (INIS)

    Arkhipkin, V. G.; Gunyakov, V. A.; Myslivets, S. A.; Gerasimov, V. P.; Zyryanov, V. Ya.; Vetrov, S. Ya.; Shabanov, V. F.

    2008-01-01

    Transmission spectra of a one-dimensional photonic crystal (PC) formed by two multilayer dielectric mirrors and a planar oriented layer of 5CB nematic liquid crystal (LC) that is sandwiched between these mirrors and serves as a structure defect are investigated experimentally. Specific features of the behavior of the spectrum of defect modes as a function of the angle of incidence of light on the crystal are studied for two polarizations: parallel and perpendicular to the director of the LC; the director either lies in the plane of incidence or is perpendicular to it. It is shown that, for the configurations considered, the maxima of the defect modes shift toward the short-wavelength region as the tilt angle of incidence radiation increases; this tendency is more manifest for the parallel-polarized component, when the director lies in the plane of incidence. In the latter case, the width of the photonic band gap (PBG) appreciably decreases. The temperature dependence of the polarization components of the transmission spectra of a PC is investigated in the case of normal incidence of light. The spectral shift of defect modes due to the variation of the refractive index of the LC at the nematic-isotropic liquid phase transition point is measured. It is shown that, in real PCs, the amplitude of defect modes decreases when approaching the center of the band gap, as well as when the number of layers in the dielectric mirrors increases. Theoretical transmission spectra of the PCs calculated by the method of recurrence relations with regard to the decay of defect modes are in good agreement with experimental data.

  10. New type magnetoresistance in Co/Si systems

    International Nuclear Information System (INIS)

    Honda, S.; Ishikawa, T.; Takai, K.; Mitarai, Y.; Harada, H.

    2005-01-01

    The magnetoresistance (MR) properties in both the sputter-deposited Co/Si multilayers and the system consisting of Co evaporated on the anodized Si have been examined. In the Co/Si multilayers, at room temperature both the sharp ordinary magnetoresistance (OMR) and the negative granular-type giant magnetoresistance (GMR) appear, while at low temperatures only the large OMR of about 3.5% is observed for in-plane field. In the Co/anodized-Si system, at room temperature the MR is negligibly small, while it increases steeply with decreasing temperature and very large OMR of about 22% is obtained at 110 K for perpendicular field

  11. Colossal magnetoresistance in manganites and related prototype devices

    International Nuclear Information System (INIS)

    Liu Yu-Kuai; Yin Yue-Wei; Li Xiao-Guang

    2013-01-01

    We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin-charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb:SrTiO 3 p—n junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions with dielectric, ferroelectric, and organic semiconductor spacers using the fully spin polarized nature of manganites; and the effect of particle size on magnetic properties in manganite nanoparticles. (topical review - magnetism, magnetic materials, and interdisciplinary research)

  12. Magnetoresistive properties of non-uniform state of antiferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Krivoruchko, V.N.

    1996-01-01

    The phenomenological model of magnetoresistive properties of magneto-non-single-phase state of alloyed magnetic semiconductors is considered using the concept derived for a description of magnetoresistive effects in layered and granular magnetic metals. By assuming that there exists a magneto-non-single state in the manganites having the perovskite structure, it is possible to describe, in the framework of above approach, large magnetoresistive effects of manganite phases with antiferromagnetic order and semiconductor-type conductivity as well as those with antiferromagnetic properties and metallic-type conductivity

  13. Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES.

    Science.gov (United States)

    Samaraweera, R L; Liu, H-C; Wang, Z; Reichl, C; Wegscheider, W; Mani, R G

    2017-07-11

    Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc . The I dc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the observed giant magnetoresistance effect even in the presence of radiation-induced magnetoresistance oscillations, the magnetoresistance oscillations do not modify the giant magnetoresistance, and the magnetoresistance oscillatory extrema, i.e., maxima and minima, disappear rather asymmetrically with increasing I dc . The results suggest the interpretation that the I dc serves to suppress scattering between states near the Fermi level in a strong magnetic field limit.

  14. Tailoring anisotropic magnetoresistance and giant magnetoresistance hysteresis loops with spin-polarized current injection

    International Nuclear Information System (INIS)

    Wegrowe, J.-E.; Kelly, D.; Hoffer, X.; Guittienne, Ph.; Ansermet, J.-Ph.

    2001-01-01

    Current pulses were injected into magnetic nanowires. Their effect on the magnetoresistance hysteresis loops was studied for three morphologies: homogeneous Ni wires, copper wires containing five cobalt/copper bilayers, and hybrid structures composed of a homogeneous Ni half wire and a multilayered Co/Cu half wire. The characteristic features of the action of the current on the magnetization are shown and discussed. [copyright] 2001 American Institute of Physics

  15. Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Zsurzsa, S., E-mail: zsurzsa.sandor@wigner.mta.hu; Péter, L.; Kiss, L.F.; Bakonyi, I.

    2017-01-01

    The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (H{sub c}) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation H{sub c}=H{sub co}+a/d{sup n} with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers. - Highlights: • Electrodeposited nanoscale Co films and Co/Cu layered structures. • Co layer thickness (d) dependence of coercivity (H{sub c}) and magnetoresistance. • H{sub c} depends on Co layer thickness according to H{sub c}=H{sub co}+a/d{sup n} with n around 1. • The common n value suggests a similar mechanism of magnetization reversal. • The common n value suggests the absence of coupling between magnetic layers.

  16. Anomalies in the transverse magnetoresistance of bismuth nanowires in the quantum low-dimensional limit

    International Nuclear Information System (INIS)

    Nikolaeva, A.A.; Konopko, L.A.; Tsurkan, A.K.; Botnari, O.V.

    2013-01-01

    Full text: We report here anomalies observed at low temperatures in the transverse magnetoresistance of single Bi nanowires. Bi wires in glass capillary were prepared by liquid phase casting technique with diameters up to 45 nm. The Bi wire are single crystals, with their axis oriented in the bisectrix trigonal plane, about 19 degrees from bisectrix axis. For the first time it was found that the field dependence of transverse magnetoresistance (TMR), R(H) at I perpendicular H in Bi wires with d 0 at T<5K. Effect has been observed at low temperatures in Bi nanowires, with diameter around the critical diameter, at the semimetal-to-semiconductor transition (SMSCT) due to size quantization effect. To interpret these anomalous an accurate model of parabolic potentials taken into account the anisotropy of effective mass of current carriers have been used. The electrical conductivity of quantum Bi wires in the homogeneous magnetic field, directed perpendicular to axis of quantum wire is calculated using the Cubo formula taking into account the scattering process carrier on the interface roughest and phonons. The experimental results confirm the existence of the semimetal-semiconductor phase transition seen in the transverse magnetoresistance.

  17. Ballistic magnetoresistance of electrodeposited nanocontacts in thin film and micrometer wire gaps

    International Nuclear Information System (INIS)

    Garcia, N.; Cheng, H.; Wang, H.; Nikolic, N.D.; Guerrero, C.A.; Papageorgopoulos, A.C.

    2004-01-01

    In this paper, we review the recent advances and progress in ballistic magnetoresistance (BMR) in magnetic nanocontacts electrodeposited in thin films and micrometer gaps. We report the influence of magnetostriction in the measurements under different configurations and substrates, as well as the contribution of the magnetic material forming the contacts. To avoid the magnetostriction effect, we have fabricated magnetic nanocontacts in Cu wires and Cu films. Similar BMR results can be observed in these systems. Our results show that the BMR effect should depend on the microproperties of the nanocontacts and should not be related with the macroproperties of the electrodes. The magnetostriction results, measured by an atomic force microscopy system with a built-in electromagnet, clearly show that there is no direct relationship between the displacement (caused by the magnetostriction effect) and the value of BMR. In fact, we present large magnetoresistance values for permalloy, coinciding with displacements in the latter's structure less than 1 nm, which is the smallest clearly observable shift allowed by our atomic force microscope. Repetitions of hundreds of R(H) curves are presented for different materials with different coercive fields. The interpretation of the results is based on the formation of an interfacial transparent layer (non-stoichiometric oxide, sulfur, etc.) at the nanocontact where the theory can explain large magnetoresistance values

  18. Multiple phase transitions and magnetoresistance of HoFe{sub 4}Ge{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Liu, J., E-mail: liujing@iastate.edu; Pecharsky, V.K.; Gschneidner, K.A.

    2015-05-15

    Highlights: • Three magnetic transitions at T{sub N} = 51 K, T{sub f1} = 42 K, and T{sub f2} = 15 K. • Kinetically arrested phase below a freezing point of ∼11 K. • First-order metamagnetic transition at critical field ∼22 kOe below 35 K. • A large magnetoresistance of ∼30% at a field change of 30 kOe near 15 K. - Abstract: A systematic study of the structural, magnetic, heat capacity, electrical resistivity and magnetoresistance properties of HoFe{sub 4}Ge{sub 2} has been performed. The temperature dependencies of the magnetization and heat capacity show three magnetic transitions at T{sub N} = 51 K, T{sub f1} = 42 K, and T{sub f2} = 15 K. The high temperature transition is antiferromagnetic ordering and the two low temperature phase transitions are due to rearrangements of the magnetic structure. A kinetically arrested phase is observed below a freezing point of ∼11 K. Below 35 K, the behavior of the isothermal magnetization reflects a first-order metamagnetic phase transition. Multiple phase transitions are also manifested in the electrical resistivity behavior. For a field change of 30 kOe, a large magnetoresistance of ∼30% is observed near T{sub f2} (15 K)

  19. High magnetoresistance at low magnetic fields in self-assembled ZnO-Co nanocomposite films.

    Science.gov (United States)

    Jedrecy, N; Hamieh, M; Hebert, C; Perriere, J

    2017-07-27

    The solid phase growth of self-assembled nanocrystals embedded in a crystalline host matrix opens up wide perspectives for the coupling of different physical properties, such as magnetic and semiconducting. In this work, we report the pulsed laser growth at room temperature of thin films composed of a dispersed array of ferromagnetic Co (0001) nanoclusters with an in-plane mono-size width of 1.3 nm, embedded in a ZnO (0001) crystalline matrix. The as-grown films lead to very high values of magnetoresistance, ranging at 9 T from -11% at 300 K to -19% at 50 K, with a steep decrease of the magnetoresistance at low magnetic fields. We establish the relationship between the magnetoresistance behavior and the magnetic response of the Co nanocluster assembly. A spin-dependent tunneling of the electrons between the Co nanoclusters through and by the semi-insulating ZnO host is achieved in our films, promising with regard to magnetic field sensors or Si-integrated spintronic devices. The effects of thermal annealing are also discussed.

  20. Modification of magnetoresistance and magnetic properties of Ni thin films by adding Dy interlayer

    Science.gov (United States)

    Vorobiov, S. I.; Shabelnyk, T. M.; Shutylieva, O. V.; Pazukha, I. M.; Chornous, A. M.

    2018-03-01

    The paper reports the influence of dysprosium (Dy) interlayer addition on structure, magnetoresistance and magnetic properties of nickel (Ni) thin films. Trilayer film systems Ni/Dy/Ni have been prepared by alternate electron-beam evaporation. It is demonstrated that all as-prepared and annealed Ni thin films have face-centered cubic structure. The composition of the samples after addition of the Dy interlayer corresponds to the combination of face-centered cubic (Ni) and hexagonal close-packed (Dy) structures. The structure of Ni/Dy/Ni film systems changes from amorphous to polycrystalline when Dy interlayer thickness (t Dy) is more than 15 nm. The value of magnetoresistance increases with the adding the Dy interlayer in both longitudinal and transverse geometries, meanwhile the anisotropic character of magnetoresistance field dependences retained. The saturation and reversal magnetizations are reduced with the increasing of the Dy thickness interlayer, while the coercivity takes the minimum value at t Dy = 15 nm. The following increasing of t Dy leads to increasing of coercivity near to three times. This result indicates the influence of the crystal structure on the magnetic properties of Ni thin films at adding Dy interlayer.

  1. Angular distributions in quasi-fission reactions

    International Nuclear Information System (INIS)

    Luetzenkirchen, K.; Kratz, J.V.; Lucas, R.; Poitou, J.; Gregoire, C.; Wirth, G.; Bruechle, W.; Suemmerer, K.

    1985-10-01

    Angular distributions for fission-like fragments were measured in the systems 50 Ti, 56 Fe + 208 Pb by applying an off-line KX-ray activation technique. The distributions d 2 sigma/dTHETAdZ exhibit forward-backward asymmetries that are strongly Z-dependent. They result from a process (quasi-fission) which yields nearly symmetric masses in times comparable to the rotational period of the composite system. A method for obtaining the variance of the tilting angular momentum, K 0 2 , from these skewed, differential angular distributions is described. The results indicate that the tilting mode is not fully excited in quasi-fission reactions. The results are compared to the sum of the variances of all statistical spin components, measured via γ-multiplicities. Integration of the angular distributions d 2 sigma/dTHETAdZ over all values of Z yields integral angular distributions dsigma/dTHETA and dsigma/dΩ symmetric around 90 0 . The associated unusually large anisotropies do not at all provide an adequate basis for tests or modifications of the transition state theory. A deconvolution of d 2 sigma/dTHETAdZ is performed with gaussian distributions depending on rotational angles ΔTHETA extending over a range of up to 540 0 . From the mean values a time scale for the evolution of K 0 is calculated. (orig.)

  2. Magnetoresistance and ion bombardment induced magnetic patterning

    International Nuclear Information System (INIS)

    Hoeink, V.

    2008-01-01

    In this thesis the combination of the magnetic patterning of the unidirectional anisotropy and the tunnel magnetoresistance effect is investigated. In my diploma thesis, it has been shown that it is in principle possible to use the magnetic patterning by ion bombardment to magnetically structure the pinned layer in magnetic tunnel junctions (MTJs) with alumina barrier. Furthermore, it has been shown that the side effects which have been observed after this treatment can be at least reduced by an additional heating step. Starting from this point, the applicability of ion bombardment induced magnetic patterning (IBMP) in general and the combination of IBMP and MTJs in particular is investigated and new applications are developed. (orig.)

  3. Large magnetoresistance in Er7Rh3

    International Nuclear Information System (INIS)

    Sengupta, Kaushik; Sampathkumaran, E.V.

    2005-01-01

    The compound Er 2 Rh 3 has been known to order antiferromagnetically below (T N =14K), and to exhibit a change in the sign of temperature coefficient of electrical resistivity (ρ) in the paramagnetic state around 120 K. Here we report the influence of external magnetic field (H) on the ρ(T) behavior of this compound (1.8-300 K). While the ρ behavior in the paramagnetic state, qualitatively speaking, is found to be robust to the application of H, the magnitude of the magnetoresistance (MR) is significant for moderate applications of H, even at temperatures for above T N untypical of metallic systems. In addition, large values are observed in the magnetically ordered state. (author)

  4. Enhanced magnetoresistance in graphene spin valve

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan)

    2017-05-01

    Graphene has been explored as a promising candidate for spintronics due to its atomically flat structure and novel properties. Here we fabricate two spin valve junctions, one from directly grown graphene on Ni electrode (DG) and other from transferred graphene (TG). The magnetoresistance (MR) ratio for DG device is found to be higher than TG device i.e. ~0.73% and 0.14%, respectively. Also the spin polarization of Ni electrode is determined to be 6.03% at room temperature in case of DG device, however it reduces to 2.1% for TG device. From this analysis, we infer how environmental exposure of the sample degrades the spin properties of the magnetic junctions. Moreover, the transport measurements reveal linear behavior for current-voltage (I-V) characteristics, indicating ohmic behavior of the junctions. Our findings unveil the efficiency of direct growth of graphene for spin filtering mechanism in spin valve devices.

  5. Evaluation of Magnetoresistive RAM for Space Applications

    Science.gov (United States)

    Heidecker, Jason

    2014-01-01

    Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

  6. Magnetoresistance in cobalt-contacted multi-wall carbon nanotubes

    International Nuclear Information System (INIS)

    Vinzelberg, H.; Zhao, B.; Moench, I.; Schumann, J.; Schneider, C.M.

    2005-01-01

    We present results for magnetotransport measurements on multiwall-carbon nanotubes (MWCNT) contacted by cobalt electrodes. By measuring the V(I) characteristics at constant magnetic fields and different orientation of the magnetization directions in the Co electrodes, we were able to determine both current and voltage dependences of the magnetoresistance (MR) effects. These tunneling MR values are compared with the directly measured MR at constant current with sweeping magnetic field. The V(I) curves show an ohmic behavior at 295 K and a non-linear tunneling behavior at 4.2 K. With decreasing bias current the MR increased up to 60% at 4.2 K, and with decreasing bias voltages even up to 175%. The MR disappears at high bias current (voltages) and temperatures higher than 40 K. For most of the samples the current dependences of the MR were found to be nearly symmetric upon reversing the current direction. However, in some cases we also observed a sign change of the MR as function of the applied current, which suggests an inversion of the spin polarization in one of the Co interfaces

  7. Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application.

    Science.gov (United States)

    Liu, Pan; Lin, Xiaoyang; Xu, Yong; Zhang, Boyu; Si, Zhizhong; Cao, Kaihua; Wei, Jiaqi; Zhao, Weisheng

    2017-12-28

    The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect.

  8. Extraordinary magnetoresistance in semiconductor/metal hybrids: A review

    KAUST Repository

    Sun, J.; Kosel, Jü rgen

    2013-01-01

    The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a

  9. Effect of quantum tunneling on spin Hall magnetoresistance.

    Science.gov (United States)

    Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

    2017-02-22

    We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y 3 Fe 5 O 12 ) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

  10. Effects of interface electric field on the magnetoresistance in spin devices

    Energy Technology Data Exchange (ETDEWEB)

    Tanamoto, T., E-mail: tetsufumi.tanamoto@toshiba.co.jp; Ishikawa, M.; Inokuchi, T.; Sugiyama, H.; Saito, Y. [Advanced LSI Technology Laboratory Corporate Research and Development Center, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582 (Japan)

    2014-04-28

    An extension of the standard spin diffusion theory is presented by using a quantum diffusion theory via a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is greatly modified by the DG term through an interface electric field. We have also carried out spin injection and detection measurements using four-terminal Si devices. The local measurement shows that the MR ratio changes depending on the current direction. We show that the change of the MR ratio depending on the current direction comes from the DG term regarding the asymmetry of the two interface electronic structures.

  11. Temperature and angular momentum dependence of the ...

    Indian Academy of Sciences (India)

    particle coupled state. The above notation is the same as that used in [14]. In the present work, the statistical averages have been calculated using the canon- ical ensemble approach since the exact solutions have well-defined particle number.

  12. Observation of large low field magnetoresistance in ramp-edge tunneling junctions based on doped manganite ferromagnetic electrodes and a SrTiO{sub 3} insulator

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, C.; Jia, Q.X.; Fan, Y.; Hundley, M.F.; Reagor, D.W.; Hawley, M.E.; Peterson, D.E.

    1998-07-01

    The authors report the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La{sub 0.7}Sr{sub 0.3})MnO{sub 3} ferromagnetic electrodes and a SrTiO{sub 3} insulator. The multilayer thin films were deposited using pulsed laser deposition and the devices were patterned using photolithography and ion milling. As expected from the spin-dependent tunneling, the junction magnetoresistance depends on the relative orientation of the magnetization in the electrodes. The maximum junction magnetoresistance (JMR) of 30% is observed below 300 Oe at low temperatures (T < 100 K).

  13. Quantum conductance in electrodeposited nanocontacts and magnetoresistance measurements

    DEFF Research Database (Denmark)

    Elhoussine, F.; Encinas, A.; Mátéfi-Tempfli, Stefan

    2003-01-01

    The conductance and magnetoresistance measurements in magnetic Ni-Ni and Co-Ni nanocontacts prepared by electrodeposition within the pores of a track of track-etched polymer membrane were discussed. At room temperature, Ni-Ni constrictions were found to show broad quantization plateaus of conduct...... of conductance during their dissolution in units of e/h, as expected for ferromagnetic ballistic nanocontacts. The measurement of the positive and negative magnetoresistance in Co-Ni nanocontacts was also elaborated....

  14. Wigner Functions and Quark Orbital Angular Momentum

    Directory of Open Access Journals (Sweden)

    Mukherjee Asmita

    2015-01-01

    Full Text Available Wigner distributions contain combined position and momentum space information of the quark distributions and are related to both generalized parton distributions (GPDs and transverse momentum dependent parton distributions (TMDs. We report on a recent model calculation of the Wigner distributions for the quark and their relation to the orbital angular momentum.

  15. Wigner Functions and Quark Orbital Angular Momentum

    OpenAIRE

    Mukherjee, Asmita; Nair, Sreeraj; Ojha, Vikash Kumar

    2014-01-01

    Wigner distributions contain combined position and momentum space information of the quark distributions and are related to both generalized parton distributions (GPDs) and transverse momentum dependent parton distributions (TMDs). We report on a recent model calculation of the Wigner distributions for the quark and their relation to the orbital angular momentum.

  16. Large, non-saturating magnetoresistance in WTe2.

    Science.gov (United States)

    Ali, Mazhar N; Xiong, Jun; Flynn, Steven; Tao, Jing; Gibson, Quinn D; Schoop, Leslie M; Liang, Tian; Haldolaarachchige, Neel; Hirschberger, Max; Ong, N P; Cava, R J

    2014-10-09

    Magnetoresistance is the change in a material's electrical resistance in response to an applied magnetic field. Materials with large magnetoresistance have found use as magnetic sensors, in magnetic memory, and in hard drives at room temperature, and their rarity has motivated many fundamental studies in materials physics at low temperatures. Here we report the observation of an extremely large positive magnetoresistance at low temperatures in the non-magnetic layered transition-metal dichalcogenide WTe2: 452,700 per cent at 4.5 kelvins in a magnetic field of 14.7 teslas, and 13 million per cent at 0.53 kelvins in a magnetic field of 60 teslas. In contrast with other materials, there is no saturation of the magnetoresistance value even at very high applied fields. Determination of the origin and consequences of this effect, and the fabrication of thin films, nanostructures and devices based on the extremely large positive magnetoresistance of WTe2, will represent a significant new direction in the study of magnetoresistivity.

  17. Large, Tunable Magnetoresistance in Nonmagnetic III-V Nanowires.

    Science.gov (United States)

    Li, Sichao; Luo, Wei; Gu, Jiangjiang; Cheng, Xiang; Ye, Peide D; Wu, Yanqing

    2015-12-09

    Magnetoresistance, the modulation of resistance by magnetic fields, has been adopted and continues to evolve in many device applications including hard-disk, memory, and sensors. Magnetoresistance in nonmagnetic semiconductors has recently raised much attention and shows great potential due to its large magnitude that is comparable or even larger than magnetic materials. However, most of the previous work focus on two terminal devices with large dimensions, typically of micrometer scales, which severely limit their performance potential and more importantly, scalability in commercial applications. Here, we investigate magnetoresistance in the impact ionization region in InGaAs nanowires with 20 nm diameter and 40 nm gate length. The deeply scaled dimensions of these nanowires enable high sensibility with less power consumption. Moreover, in these three terminal devices, the magnitude of magnetoresistance can be tuned by the transverse electric field controlled by gate voltage. Large magnetoresistance between 100% at room temperature and 2000% at 4.3 K can be achieved at 2.5 T. These nanoscale devices with large magnetoresistance offer excellent opportunity for future high-density large-scale magneto-electric devices using top-down fabrication approaches, which are compatible with commercial silicon platform.

  18. Photon beam polarization and non-dipolar angular distributions

    International Nuclear Information System (INIS)

    Peshkin, M.

    1996-01-01

    Angular distributions of ejecta from unoriented atoms and molecules depend upon the polarization state of the incident x-rays as well as upon the dynamics of the physical systems being studied. I recommend a simple geometrical way of looking at the polarization and its effects upon angular distributions. The polarization is represented as a vector in a parameter space that faithfully represents the polarization of the beam. The simple dependence of the angular dependence of the angular distributions on the polarization vector enables easy extraction of the dynamical information contained in those angular distributions. No new physical results emerge from this geometrical approach, but known consequences of the symmetries appear in an easily visualized form that I find pleasing and that has proved to be useful for planning experiments and for analyzing data

  19. Rotational speedups accompanying angular deceleration of a superfluid

    International Nuclear Information System (INIS)

    Campbell, L.J.

    1979-01-01

    Exact calculations of the angular deceleration of superfluid vortex arrays show momentary speedups in the angular velocity caused by coherent, multiple vortex loss at the boundary. The existence and shape of the speedups depend on the vortex friction, the deceleration rate, and the pattern symmetry. The phenomenon resembles, in several ways, that observed in pulsars

  20. Magnetoresistance and charge transport in graphene governed by nitrogen dopants.

    Science.gov (United States)

    Rein, Markus; Richter, Nils; Parvez, Khaled; Feng, Xinliang; Sachdev, Hermann; Kläui, Mathias; Müllen, Klaus

    2015-02-24

    We identify the influence of nitrogen-doping on charge- and magnetotransport of single layer graphene by comparing doped and undoped samples. Both sample types are grown by chemical vapor deposition (CVD) and transferred in an identical process onto Si/SiO2 wafers. We characterize the samples by Raman spectroscopy as well as by variable temperature magnetotransport measurements. Over the entire temperature range, the charge transport properties of all undoped samples are in line with literature values. The nitrogen doping instead leads to a 6-fold increase in the charge carrier concentration up to 4 × 10(13) cm(-2) at room temperature, indicating highly effective doping. Additionally it results in the opening of a charge transport gap as revealed by the temperature dependence of the resistance. The magnetotransport exhibits a conspicuous sign change from positive Lorentz magnetoresistance (MR) in undoped to large negative MR that we can attribute to the doping induced disorder. At low magnetic fields, we use quantum transport signals to quantify the transport properties. Analyses based on weak localization models allow us to determine an orders of magnitude decrease in the phase coherence and scattering times for doped samples, since the dopants act as effective scattering centers.

  1. Energy scales and magnetoresistance at a quantum critical point

    Energy Technology Data Exchange (ETDEWEB)

    Shaginyan, V.R. [Petersburg Nuclear Physics Institute, RAS, Gatchina, 188300 (Russian Federation); Racah Institute of Physics, Hebrew University, Jerusalem 91904 (Israel); CTSPS, Clark Atlanta University, Atlanta, GA 30314 (United States)], E-mail: vrshag@thd.pnpi.spb.ru; Amusia, M.Ya. [Racah Institute of Physics, Hebrew University, Jerusalem 91904 (Israel); Msezane, A.Z. [CTSPS, Clark Atlanta University, Atlanta, GA 30314 (United States); Popov, K.G. [Komi Science Center, Ural Division, RAS, 3a Chernova street, Syktyvkar, 167982 (Russian Federation); Stephanovich, V.A. [Opole University, Institute of Mathematics and Informatics, Opole, 45-052 (Poland)

    2009-03-02

    The magnetoresistance (MR) of CeCoIn{sub 5} is notably different from that in many conventional metals. We show that a pronounced crossover from negative to positive MR at elevated temperatures and fixed magnetic fields is determined by the scaling behavior of quasiparticle effective mass. At a quantum critical point (QCP) this dependence generates kinks (crossover points from fast to slow growth) in thermodynamic characteristics (like specific heat, magnetization, etc.) at some temperatures when a strongly correlated electron system transits from the magnetic field induced Landau-Fermi liquid (LFL) regime to the non-Fermi liquid (NFL) one taking place at rising temperatures. We show that the above kink-like peculiarity separates two distinct energy scales in QCP vicinity - low temperature LFL scale and high temperature one related to NFL regime. Our comprehensive theoretical analysis of experimental data permits to reveal for the first time new MR and kinks scaling behavior as well as to identify the physical reasons for above energy scales.

  2. Magnetoresistance in CePtSn under high hydrostatic pressures

    International Nuclear Information System (INIS)

    Misek, M.; Prokleska, J.; Javorsky, P.; Sechovsky, V.

    2009-01-01

    We report the evolution of magnetic-history dependent antiferromagnetic phases in CePtSn. We concentrate on the magnetoresistance in magnetic fields up to 14 T applied along the crystallographic b-axis, measured on a CePtSn single crystal subjected to hydrostatic pressure (p ≤ 2.2 GPa) generated in a double-layered CuBe/NiCrAl piston cylinder cell. We observe a gradual increase of the critical field B c LF of the low field (LF) transition up to ∼1.2 GPa where only one transition is observed at ∼11.5 T. For pressures above 1.2 GPa we observe two transitions again and B c LF decreases with further increasing pressure to reach B c LF ∼7.5T at 2.5 GPa. The position of the high field (HF) transition remains almost unaffected by applied pressure. A scenario considering the spin-slip AF structure in CePtSn is briefly discussed.

  3. Magnetoresistance of rolled-up Fe3Si nanomembranes.

    Science.gov (United States)

    Schumann, J; Lisunov, K G; Escoffier, W; Raquet, B; Broto, J M; Arushanov, E; Mönch, I; Makarov, D; Deneke, C; Schmidt, O G

    2012-06-29

    Magnetotransport of individual rolled-up Fe(3)Si nanomembranes is investigated in a broad temperature range from 4.2 K up to 300 K in pulsed magnetic fields up to 55 T. The observed magnetoresistance (MR) has the following pronounced features: (i) MR is negative in the investigated intervals of temperature and magnetic field; (ii) its magnitude increases linearly with the magnetic field in a low-field region and reveals a gradual trend to saturation when the magnetic field increases; (iii) the MR effect becomes more pronounced with increasing temperature. These dependences of MR on the magnetic field and temperature are in line with predictions of the spin-disorder model of the spin-flip s-d interaction assisted with creation or annihilation of magnons, which is expected above a certain critical temperature. Comparison of the MR features in rolled-up and planar samples reveals a substantial increase of the critical temperature in the rolled-up tube, which is attributed to a new geometry and internal strain arising in the rolled-up nanomembranes, influencing the electronic and magnetic properties of the material.

  4. Tunnel Magnetoresistance Sensors with Magnetostrictive Electrodes: Strain Sensors.

    Science.gov (United States)

    Tavassolizadeh, Ali; Rott, Karsten; Meier, Tobias; Quandt, Eckhard; Hölscher, Hendrik; Reiss, Günter; Meyners, Dirk

    2016-11-11

    Magnetostrictive tunnel magnetoresistance (TMR) sensors pose a bright perspective in micro- and nano-scale strain sensing technology. The behavior of TMR sensors under mechanical stress as well as their sensitivity to the applied stress depends on the magnetization configuration of magnetic tunnel junctions (MTJ)s with respect to the stress axis. Here, we propose a configuration resulting in an inverse effect on the tunnel resistance by tensile and compressive stresses. Numerical simulations, based on a modified Stoner-Wohlfarth (SW) model, are performed in order to understand the magnetization reversal of the sense layer and to find out the optimum bias magnetic field required for high strain sensitivity. At a bias field of -3.2 kA/m under a 0.2 × 10 - 3 strain, gauge factors of 2294 and -311 are calculated under tensile and compressive stresses, respectively. Modeling results are investigated experimentally on a round junction with a diameter of 30 ± 0.2 μ m using a four-point bending apparatus. The measured field and strain loops exhibit nearly the same trends as the calculated ones. Also, the gauge factors are in the same range. The junction exhibits gauge factors of 2150 ± 30 and -260 for tensile and compressive stresses, respectively, under a -3.2 kA/m bias magnetic field. The agreement of the experimental and modeling results approves the proposed configuration for high sensitivity and ability to detect both tensile and compressive stresses by a single TMR sensor.

  5. Simultaneous polarized neutron reflectometry and anisotropic magnetoresistance measurements.

    Science.gov (United States)

    Demeter, J; Teichert, A; Kiefer, K; Wallacher, D; Ryll, H; Menéndez, E; Paramanik, D; Steitz, R; Van Haesendonck, C; Vantomme, A; Temst, K

    2011-03-01

    A novel experimental facility to carry out simultaneous polarized neutron reflectometry (PNR) and anisotropic magnetoresistance (AMR) measurements is presented. Performing both techniques at the same time increases their strength considerably. The proof of concept of this method is demonstrated on a CoO/Co bilayer exchange bias system. Although information on the same phenomena, such as the coercivity or the reversal mechanism, can be separately obtained from either of these techniques, the simultaneous application optimizes the consistency between both. In this way, possible differences in experimental conditions, such as applied magnetic field amplitude and orientation, sample temperature, magnetic history, etc., can be ruled out. Consequently, only differences in the fundamental sensitivities of the techniques can cause discrepancies in the interpretation between the two. The almost instantaneous information obtained from AMR can be used to reveal time-dependent effects during the PNR acquisition. Moreover, the information inferred from the AMR measurements can be used for optimizing the experimental conditions for the PNR measurements in a more efficient way than with the PNR measurements alone.

  6. Optical angular momentum and atoms.

    Science.gov (United States)

    Franke-Arnold, Sonja

    2017-02-28

    Any coherent interaction of light and atoms needs to conserve energy, linear momentum and angular momentum. What happens to an atom's angular momentum if it encounters light that carries orbital angular momentum (OAM)? This is a particularly intriguing question as the angular momentum of atoms is quantized, incorporating the intrinsic spin angular momentum of the individual electrons as well as the OAM associated with their spatial distribution. In addition, a mechanical angular momentum can arise from the rotation of the entire atom, which for very cold atoms is also quantized. Atoms therefore allow us to probe and access the quantum properties of light's OAM, aiding our fundamental understanding of light-matter interactions, and moreover, allowing us to construct OAM-based applications, including quantum memories, frequency converters for shaped light and OAM-based sensors.This article is part of the themed issue 'Optical orbital angular momentum'. © 2017 The Author(s).

  7. Optical angular momentum and atoms

    Science.gov (United States)

    2017-01-01

    Any coherent interaction of light and atoms needs to conserve energy, linear momentum and angular momentum. What happens to an atom’s angular momentum if it encounters light that carries orbital angular momentum (OAM)? This is a particularly intriguing question as the angular momentum of atoms is quantized, incorporating the intrinsic spin angular momentum of the individual electrons as well as the OAM associated with their spatial distribution. In addition, a mechanical angular momentum can arise from the rotation of the entire atom, which for very cold atoms is also quantized. Atoms therefore allow us to probe and access the quantum properties of light’s OAM, aiding our fundamental understanding of light–matter interactions, and moreover, allowing us to construct OAM-based applications, including quantum memories, frequency converters for shaped light and OAM-based sensors. This article is part of the themed issue ‘Optical orbital angular momentum’. PMID:28069766

  8. AngularJS directives

    CERN Document Server

    Vanston, Alex

    2013-01-01

    This book uses a practical, step-by-step approach, starting with how to build directives from the ground up before moving on to creating web applications comprised of multiple modules all working together to provide the best user experience possible.This book is intended for intermediate JavaScript developers who are looking to enhance their understanding of single-page web application development with a focus on AngularJS and the JavaScript MVC frameworks.It is expected that readers will understand basic JavaScript patterns and idioms and can recognize JSON formatted data.

  9. Magnetoresistance effects in hybrid semiconductor devices

    NARCIS (Netherlands)

    Schoonus, J.J.H.M.

    2008-01-01

    Until recently, mainstream electronics was exclusively based on charge proper- ties. Apart from charge, an electron also possesses an intrinsic angular momen- tum (spin), and directly coupled to that a magnetic moment. A newly emerg- ing approach is to use this extra spin degree of freedom to

  10. Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

    DEFF Research Database (Denmark)

    Bolotin, Kirill; Kuemmeth, Ferdinand; Ralph, D

    2006-01-01

    We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance w...... with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference....

  11. Extremely large magnetoresistance and Kohler's rule in PdSn4: A complete study of thermodynamic, transport, and band-structure properties

    Science.gov (United States)

    Jo, Na Hyun; Wu, Yun; Wang, Lin-Lin; Orth, Peter P.; Downing, Savannah S.; Manni, Soham; Mou, Dixiang; Johnson, Duane D.; Kaminski, Adam; Bud'ko, Sergey L.; Canfield, Paul C.

    2017-10-01

    The recently discovered material PtSn4 is known to exhibit extremely large magnetoresistance (XMR) that also manifests Dirac arc nodes on the surface. PdSn4 is isostructural to PtSn4 with the same electron count. We report on the physical properties of high-quality single crystals of PdSn4 including specific heat, temperature- and magnetic-field-dependent resistivity and magnetization, and electronic band-structure properties obtained from angle-resolved photoemission spectroscopy (ARPES). We observe that PdSn4 has physical properties that are qualitatively similar to those of PtSn4, but find also pronounced differences. Importantly, the Dirac arc node surface state of PtSn4 is gapped out for PdSn4. By comparing these similar compounds, we address the origin of the extremely large magnetoresistance in PdSn4 and PtSn4; based on detailed analysis of the magnetoresistivity ρ (H ,T ) , we conclude that neither the carrier compensation nor the Dirac arc node surface state are the primary reason for the extremely large magnetoresistance. On the other hand, we find that, surprisingly, Kohler's rule scaling of the magnetoresistance, which describes a self-similarity of the field-induced orbital electronic motion across different length scales and is derived for a simple electronic response of metals to an applied magnetic field is obeyed over the full range of temperatures and field strengths that we explore.

  12. Extremely large magnetoresistance and Kohler's rule in PdSn4 : A complete study of thermodynamic, transport, and band-structure properties

    International Nuclear Information System (INIS)

    Jo, Na Hyun; Wu, Yun; Wang, Lin-Lin; Orth, Peter P.; Downing, Savannah S.

    2017-01-01

    The recently discovered material PtSn 4 is known to exhibit extremely large magnetoresistance (XMR) that also manifests Dirac arc nodes on the surface. PdSn 4 is isostructural to PtSn 4 with the same electron count. Here, we report on the physical properties of high-quality single crystals of PdSn 4 including specific heat, temperature- and magnetic-field-dependent resistivity and magnetization, and electronic band-structure properties obtained from angle-resolved photoemission spectroscopy (ARPES). We observe that PdSn 4 has physical properties that are qualitatively similar to those of PtSn 4 , but find also pronounced differences. Importantly, the Dirac arc node surface state of PtSn 4 is gapped out for PdSn 4 . By comparing these similar compounds, we address the origin of the extremely large magnetoresistance in PdSn 4 and PtSn 4 ; based on detailed analysis of the magnetoresistivity ρ (H , T) , we conclude that neither the carrier compensation nor the Dirac arc node surface state are the primary reason for the extremely large magnetoresistance. On the other hand, we also find that, surprisingly, Kohler's rule scaling of the magnetoresistance, which describes a self-similarity of the field-induced orbital electronic motion across different length scales and is derived for a simple electronic response of metals to an applied magnetic field is obeyed over the full range of temperatures and field strengths that we explore.

  13. Low temperature magnetoresistance in La1.32Sr1.68Mn2O7 layered manganite under hydrostatic pressure

    International Nuclear Information System (INIS)

    Kumaresavanji, M.; Fontes, M.B.

    2010-01-01

    The La 1.32 Sr 1.68 Mn 2 O 7 layered manganite system has been studied by the low temperature electrical resistance and magnetoresistance under hydrostatic pressure up to 25 kbar. We have observe both, a Curie temperature (T C ) and a metal-insulator transition (T MI ) at 118 K in the ambient pressure. The applied pressure shifts the T MI to higher temperature values and induces a second metal-insulator transition (T 2 MI ) at 90 K, in the temperature dependence of resistivity measurements. Also, the pressure suppresses the peak resistance abruptly at T C . When an external field of 5 T is applied, we have observed a large negative magnetoresistance of 300% at the transition temperature and a 128% at 4.5 K. However, the increased pressure decreases the magnetoresistance ratio gradually. When the pressure reaches its maximum available value of 25 kbar, the magnetoresistance ratio decreases at a rate of 1.3%/kbar. From our experimental results, the decrease of magnetoresistance ratio with pressure is explained by the pressure induced canted spin state which is not favor for the spin polarized intergrain tunneling in layered manganites.

  14. Angular Distribution of GRBs

    Directory of Open Access Journals (Sweden)

    L. G. Balázs

    2012-01-01

    Full Text Available We studied the complete randomness of the angular distribution of BATSE gamma-ray bursts (GRBs. Based on their durations and peak fluxes, we divided the BATSE sample into 5 subsamples (short1, short2, intermediate, long1, long2 and studied the angular distributions separately. We used three methods to search for non-randomness in the subsamples: Voronoi tesselation, minimal spanning tree, and multifractal spectra. To study any non-randomness in the subsamples we defined 13 test-variables (9 from Voronoi tesselation, 3 from the minimal spanning tree and one from the multifractal spectrum. We made Monte Carlo simulations taking into account the BATSE’s sky-exposure function. We tested therandomness by introducing squared Euclidean distances in the parameter space of the test-variables. We recognized that the short1, short2 groups deviate significantly (99.90%, 99.98% from the fully random case in the distribution of the squared Euclidean distances but this is not true for the long samples. In the intermediate group, the squared Euclidean distances also give significant deviation (98.51%.

  15. Perturbed angular correlation

    International Nuclear Information System (INIS)

    Fabris, J.D.

    1977-01-01

    The electric quadrupolar interaction in some hafnium complexes, measured at the metal nucleus level is studied. For that purpose, the technique of γ-γ perturbed angular correlation is used: the frequencies of quadrupolar interaction are compared with some hafnium α-hydroxicarboxilates, namely glycolate, lactate, mandelate and benzylate; the influence of the temperature on the quadrupolar coupling on the hafnium tetramandelate is studied; finally, the effects associated with the capture of thermal neutrons by hafnium tetramandelate are examined locally at the nuclear level. The first group of results shows significant differences in a series of complexes derived from glycolic acid. On the other hand, the substitution of the protons in hafnium tetramandelate structure by some alkaline cations permits to verify a correlation between the variations in the quadrupolar coupling and the electronegativities of the substituent elements. Measurements at high temperatures show that this complex is thermally stable at 100 and 150 0 C. It is possible to see the appearance of two distinct sites for the probe nucleus, after heating the sample at 100 0 C for prolonged time. This fact is attributed to a probable interconversion among the postulated structural isomers for the octacoordinated compounds. Finally, measurements of angular correlation on the irradiated complex show that there is an effective destruction of the target molecule by neutron capture [pt

  16. Galaxy angular momentum

    International Nuclear Information System (INIS)

    Thompson, L.A.

    1974-01-01

    In order to test the theories which purport to explain the origin of galaxy angular momentum, this study presents new data for about 1000 individual galaxies in eight rich clusters. The clusters which are studied include Virgo, A 119, A 400, A 1656 (Coma), A 2147, A 2151 (Hercules), A 2197, and A 2199. Selected samples of these data are used to investigate systematic alignment effects in clusters of galaxies and to investigate the intrinsic ellipticities of E, SO, and spiral galaxies. The following new results are reported: Galaxies in the cluster A 2197 show a significant alignment effect (chi 2 probability less than 0.0002), and the preferential direction of alignment corresponds approximately to the major axis of the overall cluster elongation. None of the other seven clusters show any significant alignment trends. The spiral galaxy samples in four clusters (Virgo, A 1656, A 2151, and A 2197) were large enough to analyze the number distributions of forward and reverse winding spirals. Large and small spiral galaxies have identical ellipticity distributions. Large E and SO galaxies tend to be more spherical, and small E and SO galaxies more flattened. The intrinsic ellipticities of E, SO, and spiral galaxies are the same for galaxies in the ''field'' and for galaxies in rich clusters. Six models of galaxy formation are reviewed, and the major []mphasis is placed on how each model explains the origin of galaxy angular momentum. (Diss. Abstr. Int., B)

  17. Magnetoresistance and Microstructure of Magnetite Nanocrystals Dispersed in Indium−Tin Oxide Thin Films

    OpenAIRE

    Okada, Koichi; Kohiki, Shigemi; Mitome, Masanori; Tanaka, Hidekazu; Arai, Masao; Mito, Masaki; Deguchi, Hiroyuki

    2009-01-01

    Epitaxial indium−tin oxide (ITO) thin films were fabricated on a yttria-stabilized zirconia (YSZ) substrate by pulsed-laser deposition using magnetite (Fe3O4) nanoparticle dispersed ITO powders as a target. Magnetoresistance of the film at a field of 1 T was 39% at 45 K, and it stayed at 3% above 225 K. The film demonstrated cooling hysteresis in the temperature dependence of direct-current magnetization. Transmission electron microscopy revealed that phase-separated Fe3O4 nanocrystals with w...

  18. Nonmonotonic and anisotropic magnetoresistance effect in antiferromagnet CaMn2Bi2

    Science.gov (United States)

    Kawaguchi, N.; Urata, T.; Hatano, T.; Iida, K.; Ikuta, H.

    2018-04-01

    We found a large and unique magnetoresistance (MR) effect for CaMn2Bi2 . When the magnetic field was applied along the crystallographic c axis at low temperatures, the resistivity increased with the magnetic field and the MR ratio reached several hundred percent, but then it decreased with further increasing the applied field. In addition, the angle dependence measurement revealed a strong anisotropy. This compound is an antiferromagnetic semiconductor with a narrow band gap, and Mn atoms form a corrugated honeycomb lattice. Therefore, a frustration among the magnetic moments is expected, and we propose that our observations can be understood by a nonmonotonic modulation of magnetic fluctuation under the magnetic field.

  19. Some magnetic and magnetoresistive properties of RF-sputtered thin NiFe-Si films.

    Science.gov (United States)

    Vatskicheva, M.; Vatskichev, Ly.; Dimitrov, I.; Kunev, B.

    The galvanomagnetic properties and some structural peculiarities of rf-sputtered alloy films (NI80Fe20)100-xSix at 0 < x < 30 at. % were studied and compared with the corresponding properties of evaporated films of the same thickness and composition. The content of silicon increased with the increasing of the velocity of deposition and led to the amorphousation of the films. Coercivity decreased with the velocity of growth but it did not depend on the thickness and on the velocity of film deposition. The magnetoresistance ratio Dr/r of the sputtered films was about three times higher then that of the evaporated films.

  20. Magnetoresistance based determination of basic parameters of minority charge carriers in solid matter

    Directory of Open Access Journals (Sweden)

    Y.O. Uhryn

    2017-12-01

    Full Text Available Magnetoresistance as a tool of basic parameters determination of minority charge carriers and the ratio of minority charge carriers conductivity to majority ones in solid matter has been considered within the framework of the phenomenological two-band model. The criterion of the application of this model has been found. As examples of these equations usage the conductor, semiconductor and superconductor have been introduced. From the obtained temperature dependences of the aforementioned values in superconductor, a supposition of a deciding role of minority charge carriers in the emergence of superconductivity state has been made.

  1. Giant magnetoresistance effect in nanostructures consisting of magnetic-electric barriers

    International Nuclear Information System (INIS)

    Tang, Wei-Hua; Li, Chun-Shu; Kong, Yong-Hong; Zhang, Gui-Lian

    2007-01-01

    The GMR effect in magnetic-electric barrier nanostructure, which can be realized experimentally by depositing two parallel metallic ferromagnetic strips with an applied voltage on the top of heterostructure, is investigated theoretically. It is shown that a considerable GMR effect can be achieved in such nanosystems due to the significant transmission difference for electrons tunneling through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio is strongly dependent upon the applied voltage to metallic ferromagnetic strips in nanosystems, thus may leading to voltage-tunable GMR devices

  2. Structural and magnetoresistance study of LaxMnyO3±z

    International Nuclear Information System (INIS)

    Jimenez, M.; Martinez, J.L.; Prieto, C.; de Andres, A.; Alonso, J.; Gonzalez-Calbet, J.; Fernandez-Diaz, M.T.

    1997-01-01

    We study the system La x MnO 3±z in order to produce proper self-doping (Mn 3+ /Mn 4+ ratio) by La vacancies only, in place of divalent substitution. The system is stable in the range 0.8 C spanning from 200 to 300 K depending on the doping level, with a saturation value ∼2.7μ B /Mn atom. La x MnO 3±z present a metallic-insulator transition, and a magneto-resistance effect close to 75% at 200 K under an applied magnetic field of 9 T, with RT (300 K) value close to 50%. (orig.)

  3. Superconducting spin switch with infinite magnetoresistance induced by an internal exchange field.

    Science.gov (United States)

    Li, Bin; Roschewsky, Niklas; Assaf, Badih A; Eich, Marius; Epstein-Martin, Marguerite; Heiman, Don; Münzenberg, Markus; Moodera, Jagadeesh S

    2013-03-01

    A theoretical prediction by de Gennes suggests that the resistance in a FI/S/FI (where FI is a ferromagnetic insulator, and S is a superconductor) structure will depend on the magnetization direction of the two FI layers. We report a magnetotransport measurement in a EuS/Al/EuS structure, showing that an infinite magnetoresistance can be produced by tuning the internal exchange field at the FI/S interface. This proximity effect at the interface can be suppressed by an Al(2)O(3) barrier as thin as 0.3 nm, showing the extreme confinement of the interaction to the interface giving rise to the demonstrated phenomena.

  4. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    International Nuclear Information System (INIS)

    Hashimoto, T.; Kamikawa, S.; Haruyama, J.; Soriano, D.; Pedersen, J. G.; Roche, S.

    2014-01-01

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO 2 /FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO 2 /FGNPA junction also drastically enhances TMR ratios up to ∼100%

  5. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    Energy Technology Data Exchange (ETDEWEB)

    Hashimoto, T.; Kamikawa, S.; Haruyama, J., E-mail: J-haru@ee.aoyama.ac.jp [Faculty of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Soriano, D. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Pedersen, J. G. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Department of Micro-and Nanotechnology, DTU Nanotech, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Roche, S. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); ICREA - Institucio Catalana de Recerca i Estudis Avancats, 08010 Barcelona (Spain)

    2014-11-03

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO{sub 2}/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO{sub 2}/FGNPA junction also drastically enhances TMR ratios up to ∼100%.

  6. Magnetoresistive magnetometer for space science applications

    International Nuclear Information System (INIS)

    Brown, P; Beek, T; Carr, C; O’Brien, H; Cupido, E; Oddy, T; Horbury, T S

    2012-01-01

    Measurement of the in situ dc magnetic field on space science missions is most commonly achieved using instruments based on fluxgate sensors. Fluxgates are robust, reliable and have considerable space heritage; however, their mass and volume are not optimized for deployment on nano or picosats. We describe a new magnetometer design demonstrating science measurement capability featuring significantly lower mass, volume and to a lesser extent power than a typical fluxgate. The instrument employs a sensor based on anisotropic magnetoresistance (AMR) achieving a noise floor of less than 50 pT Hz −1/2 above 1 Hz on a 5 V bridge bias. The instrument range is scalable up to ±50 000 nT and the three-axis sensor mass and volume are less than 10 g and 10 cm 3 , respectively. The ability to switch the polarization of the sensor's easy axis and apply magnetic feedback is used to build a driven first harmonic closed loop system featuring improved linearity, gain stability and compensation of the sensor offset. A number of potential geospace applications based on the initial instrument results are discussed including attitude control systems and scientific measurement of waves and structures in the terrestrial magnetosphere. A flight version of the AMR magnetometer will fly on the TRIO-CINEMA mission due to be launched in 2012. (paper)

  7. Noncontact vibration measurements using magnetoresistive sensing elements

    Science.gov (United States)

    Tomassini, R.; Rossi, G.

    2016-06-01

    Contactless instrumentations is more and more used in turbomachinery testing thanks to the non-intrusive character and the possibility to monitor all the components of the machine at the same time. Performances of blade tip timing (BTT) measurement systems, used for noncontact turbine blade vibration measurements, in terms of uncertainty and resolution are strongly affected by sensor characteristics and processing methods. The sensors used for BTT generate pulses, used for precise measurements of turbine blades time of arrival. Nowadays proximity sensors used in this application are based on optical, capacitive, eddy current and microwave measuring principle. Pressure sensors has been also tried. This paper summarizes the results achieved using a novel instrumentation based on the magnetoresistive sensing elements. The characterization of the novel probe has been already published. The measurement system was validated in test benches and in a real jet-engine comparing different sensor technologies. The whole instrumentation was improved. The work presented in this paper focuses on the current developments. In particular, attention is given to the data processing software and new sensor configurations.

  8. Tunneling magnetoresistance from a symmetry filtering effect

    International Nuclear Information System (INIS)

    Butler, William H

    2008-01-01

    This paper provides a brief overview of the young, but rapidly growing field of spintronics. Its primary objective is to explain how as electrons tunnel through simple insulators such as MgO, wavefunctions of certain symmetries are preferentially transmitted. This symmetry filtering property can be converted into a spin-filtering property if the insulator is joined epitaxially to a ferromagnetic electrode with the same two-dimensional symmetry parallel to the interface. A second requirement of the ferromagnetic electrodes is that a wavefunction with the preferred symmetry exists in one of the two spin channels but not in the other. These requirements are satisfied for electrons traveling perpendicular to the interface for Fe-MgO-Fe tunnel barriers. This leads to a large change in the resistance when the magnetic moment of one of the electrodes is rotated relative to those of the other electrode. This large tunneling magnetoresistance effect is being used as the read sensor in hard drives and may form the basis for a new type of magnetic memory. (topical review)

  9. The influence of interlayer exchange coupling in giant-magnetoresistive devices on spin diode effect in wide frequency range

    Energy Technology Data Exchange (ETDEWEB)

    Ziętek, Sławomir, E-mail: zietek@agh.edu.pl; Skowroński, Witold; Wiśniowski, Piotr; Czapkiewicz, Maciej; Stobiecki, Tomasz [Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków (Poland); Ogrodnik, Piotr [Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków (Poland); Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa (Poland); Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland); Barnaś, Józef [Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland); Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań (Poland)

    2015-09-21

    Spin diode effect in a giant magnetoresistive strip is measured in a broad frequency range, including resonance and off-resonance frequencies. The off-resonance dc signal is relatively strong and also significantly dependent on the exchange coupling between magnetic films through the spacer layer. The measured dc signal is described theoretically by taking into account magnetic dynamics induced by Oersted field created by an ac current flowing through the system.

  10. Anisotropic magnetoresistance and tunneling magnetoresistance of conducting filaments in NiO with different resistance states

    Science.gov (United States)

    Zhao, Diyang; Qiao, Shuang; Luo, Yuxiang; Chen, Aitian; Zhang, Pengfei; Zheng, Ping; Sun, Zhong; Guo, Minghua; Chiang, F.-K.; Wu, Jian; Luo, Jianlin; Li, Jianqi; Wang, Yayu; Zhao, Yonggang; Tsinghua University Team; Chinese Academy of Sciences Collaboration

    Resistive switching (RS) effect in conductor/insulator/conductor thin-film stacks has attracted much attention due to its interesting physics and potentials for applications. NiO is one of the most representative systems and its RS effect has been generally explained by the formation and rupture of Ni related conducting filaments, which are very unique since they are formed by electric forming process. We study the MR behaviors in NiO RS films with different resistance states. Rich and interesting MR behaviors were observed, including the normal and anomalous anisotropic magnetoresistance (AMR) and tunneling magnetoresistance (TMR), etc., which provide new insights into the nature of the filaments and their evolution in the resistive switching process. First-principles calculation reveals the essential role of oxygen migration into the filaments during the RESET process and can account for the experimental results. Our work provides a new avenue for the exploration of the conducting filaments in RS materials, and is significant for understanding the RS mechanism as well as multifunctional device design.

  11. Magnetoresistance of magnetically doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Behan, A J; Mokhtari, A; Blythe, H J; Fox, A M; Gehring, G A [Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH (United Kingdom); Ziese, M, E-mail: G.A.Gehring@sheffield.ac.u [Division of Superconductivity and Magnetism, University of Leipzig, D-04103, Leipzig (Germany)

    2009-08-26

    Magnetoresistance measurements have been made at 5 K on doped ZnO thin films grown by pulsed laser deposition. ZnCoO, ZnCoAlO and ZnMnAlO samples have been investigated and compared to similar films containing no transition metal dopants. It is found that the Co-doped samples with a high carrier concentration have a small negative magnetoresistance, irrespective of their magnetic moment. On decreasing the carrier concentration, a positive contribution to the magnetoresistance appears and a further negative contribution. This second, negative contribution, which occurs at very low carrier densities, correlates with the onset of ferromagnetism due to bound magnetic polarons suggesting that the negative magnetoresistance results from the destruction of polarons by a magnetic field. An investigation of the anisotropic magnetoresistance showed that the orientation of the applied magnetic field, relative to the sample, had a large effect. The results for the ZnMnAlO samples showed less consistent trends.

  12. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers.

    Science.gov (United States)

    Stamopoulos, D; Aristomenopoulou, E

    2015-08-26

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent 'on' and 'off', thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis.

  13. Fusion neutron effects on magnetoresistivity of copper stabilizer materials

    International Nuclear Information System (INIS)

    Guinan, M.W.; Van Konynenburg, R.A.

    1983-01-01

    Eight copper wires were repeatedly irradiated at 4.2 to 4.4 K with 14.8 MV neutrons and isochronally annealed at temperatures up to 34 0 C for a total of five cycles. Their electrical resistances were monitored during irradiation under zero applied magnetic field. After each irradiation the magnetoresistances were measured in applied transverse magnetic fields of up to 12 T. Then the samples were isochronally annealed to observe the recovery of the resistivity and magnetoresistivity. After each anneal at the highest temperature (34 0 C), some of the damage remained and contributed to the damage state observed following the subsequent irradiation. In this way, we were able to observe how the changes in magnetoresistance would accumulate during the repeated irradiations and anneals expected to be characteristic of fusion reactor magnets. For each succeeding irradiation the fluence was chosen to produce approximately the same final magnetoresistance at 12 T, taking account of the accumulating residual radiation damage. The increment of magnetoresistivity added by the irradiation varied from 35 to 65% at 12 T and from 50 to 90% at 8 T for the various samples

  14. Angular mining conveyor

    Energy Technology Data Exchange (ETDEWEB)

    Sender, A; Mura, A; Liduchowski, L; Zok, P; Skolik, W; Szyngiel, S; Rojek, H; Gajda, B; Major, M; Stanislawski, P; Sliwiok, H; Sikora, J

    1988-10-19

    Angular mining conveyor provided with a drag chain extending along the axis of its path of movement, and a corner member, inside which the drag chain is led in a forced way, characterized in that the drag chain, where its path curves around the corner member, is located by supporting of the vertical links of the chain along the required curved section of the conveyor path around said corner member, and the supporting line of the links is so chosen, that, within the said curved section of the conveyor path, a space is maintained between the vertical end surface of the scrapers and the outer curved surface of the radially inner side wall of a corner trough associated with the corner member, through which corner trough the scrapers pass. 10 figs.

  15. The tunnel magnetoresistance in chains of quantum dots weakly coupled to external leads

    International Nuclear Information System (INIS)

    Weymann, Ireneusz

    2010-01-01

    We analyze numerically the spin-dependent transport through coherent chains of three coupled quantum dots weakly connected to external magnetic leads. In particular, using the diagrammatic technique on the Keldysh contour, we calculate the conductance, shot noise and tunnel magnetoresistance (TMR) in the sequential and cotunneling regimes. We show that transport characteristics greatly depend on the strength of the interdot Coulomb correlations, which determines the spatial distribution of the electron wavefunction in the chain. When the correlations are relatively strong, depending on the transport regime, we find both negative TMR as well as TMR enhanced above the Julliere value, accompanied with negative differential conductance (NDC) and super-Poissonian shot noise. This nontrivial behavior of tunnel magnetoresistance is associated with selection rules that govern tunneling processes and various high-spin states of the chain that are relevant for transport. For weak interdot correlations, on the other hand, the TMR is always positive and not larger than the Julliere TMR, although super-Poissonian shot noise and NDC can still be observed.

  16. Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts.

    Science.gov (United States)

    Schöneberg, J; Otte, F; Néel, N; Weismann, A; Mokrousov, Y; Kröger, J; Berndt, R; Heinze, S

    2016-02-10

    Anisotropic magnetoresistance, that is, the sensitivity of the electrical resistance of magnetic materials on the magnetization direction, is expected to be strongly enhanced in ballistic transport through nanoscale junctions. However, unambiguous experimental evidence of this effect is difficult to achieve. We utilize single-atom junctions to measure this ballistic anisotropic magnetoresistance (AMR). Single Co and Ir atoms are deposited on domains and domain walls of ferromagnetic Fe layers on W(110) to control their magnetization directions. They are contacted with nonmagnetic tips in a low-temperature scanning tunneling microscope to measure the junction conductances. Large changes of the magnetoresistance occur from the tunneling to the ballistic regime due to the competition of localized and delocalized d-orbitals, which are differently affected by spin-orbit coupling. This work shows that engineering the AMR at the single atom level is feasible.

  17. Studies of colossal magnetoresistive oxides with radioactive isotopes

    CERN Document Server

    CERN. Geneva. ISOLDE and Neutron Time-of-Flight Experiments Committee; Amaral, V S; Araújo, J P; Butz, T; Correia, J G; Dubourdieu, C; Habermeier, H U; Lourenço, A A; Marques, J G; Da Silva, M F A; Senateur, J P; Soares, J C; Sousa, J B; Suryan, R; Tokura, Y; Tavares, P B; Tomioka, Y; Tröger, W; Vantomme, A; Vieira, J M; Wahl, U; Weiss, F P; INTC

    2000-01-01

    We propose to study Colossal Magnetoresistive (CMR) oxides with several nuclear techniques, which use radioactive elements at ISOLDE. Our aim is to provide local and element selective information on some of the doping mechanisms that rule electronic interactions and magnetoresistance, in a complementary way to the use of conventional characterisation techniques. Three main topics are proposed: \\\\ \\\\ a) Studies of local [charge and] structural modifications in antiferromagnetic LaMnO$_{3+ \\delta}$ and La$_{1-x}$R$_{x}$MnO$_{3}$ with R=Ca and Cd, doped ferromagnetic systems with competing interactions: - research on the lattice site and electronic characterisation of the doping element. \\\\ \\\\ b) Studies of self doped La$_{x}$R$_{1-x}$MnO$_{3+\\delta}$ systems, with oxygen and cation non-stoichiometry: -learning the role of defects in the optimisation of magnetoresistive properties. \\\\ \\\\ c) Probing the disorder and quenched random field effects in the vicinity of the charge or orbital Ordered/Ferromagnetic phase...

  18. Anomalous electronic structure and magnetoresistance in TaAs2.

    Science.gov (United States)

    Luo, Yongkang; McDonald, R D; Rosa, P F S; Scott, B; Wakeham, N; Ghimire, N J; Bauer, E D; Thompson, J D; Ronning, F

    2016-06-07

    The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions.

  19. Single nucleotide polymorphism (SNP) detection on a magnetoresistive sensor

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Østerberg, Frederik Westergaard; Dufva, Martin

    2013-01-01

    We present a magnetoresistive sensor platform for hybridization assays and demonstrate its applicability on single nucleotide polymorphism (SNP) genotyping. The sensor relies on anisotropic magnetoresistance in a new geometry with a local negative reference and uses the magnetic field from...... the sensor bias current to magnetize magnetic beads in the vicinity of the sensor. The method allows for real-time measurements of the specific bead binding to the sensor surface during DNA hybridization and washing. Compared to other magnetic biosensing platforms, our approach eliminates the need...... for external electromagnets and thus allows for miniaturization of the sensor platform....

  20. Detection of magnetic resonance signals using a magnetoresistive sensor

    Science.gov (United States)

    Budker, Dmitry; Pines, Alexander; Xu, Shoujun; Hilty, Christian; Ledbetter, Micah P; Bouchard, Louis S

    2013-10-01

    A method and apparatus are described wherein a micro sample of a fluidic material may be assayed without sample contamination using NMR techniques, in combination with magnetoresistive sensors. The fluidic material to be assayed is first subject to pre-polarization, in one embodiment, by passage through a magnetic field. The magnetization of the fluidic material is then subject to an encoding process, in one embodiment an rf-induced inversion by passage through an adiabatic fast-passage module. Thereafter, the changes in magnetization are detected by a pair of solid-state magnetoresistive sensors arranged in gradiometer mode. Miniaturization is afforded by the close spacing of the various modules.

  1. Magnetoresistance of Mn-decorated topological line defects in graphene

    KAUST Repository

    Obodo, Tobechukwu Joshua

    2015-01-13

    We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green\\'s function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.

  2. Strain effects on anisotropic magnetoresistance in a nanowire spin valve

    Science.gov (United States)

    Hossain, Md I.; Maksud, M.; Subramanian, A.; Atulasimha, J.; Bandyopadhyay, S.

    2016-11-01

    The longitudinal magnetoresistance of a copper nanowire contacted by two cobalt contacts shows broad spin-valve peaks at room temperature. However, when the contacts are slightly heated, the peaks change into troughs which are signature of anisotropic magnetoresistance (AMR). Under heating, the differential thermal expansion of the contacts and the substrate generates a small strain in the cobalt contacts which enhances the AMR effect sufficiently to change the peak into a trough. This shows the extreme sensitivity of AMR to strain. The change in the AMR resistivity coefficient due to strain is estimated to be a few m Ω -m/microstrain.

  3. Magnetoresistance of Mn-decorated topological line defects in graphene

    KAUST Repository

    Obodo, Tobechukwu Joshua; Kahaly, M. Upadhyay; Schwingenschlö gl, Udo

    2015-01-01

    We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green's function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.

  4. Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.

    Science.gov (United States)

    Huang, Qi-Kun; Yan, Yi; Zhang, Kun; Li, Huan-Huan; Kang, Shishou; Tian, Yu-Feng

    2016-11-23

    Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

  5. Coincident-inclusive electrofission angular correlations

    International Nuclear Information System (INIS)

    Arruda Neto, J.D.T.

    1983-08-01

    A method for the joint analysis of coincident and inclusive electrofission data, in order to minimize effects of the model dependence of data interpretation, is developed. Explicit calculations of the (e,e'f) angular correlations are presented. The potentialities of the method to the study of sub- and near-barrier properties of the fission process, and to the study of the giant resonances fission mode, are discussed. (Author) [pt

  6. Low temperature resistivity plateau and non-saturating magnetoresistance in Type-II Weyl semimetal WP2

    Science.gov (United States)

    Nagpal, V.; Kumar, P.; Sudesh, Patnaik, S.

    2018-04-01

    We have studied the resistivity and magnetoresistance (MR) properties of the recently predicted type-II Weyl semimetal WP2. Polycrystalline WP2 is synthesized using solid state reaction and crystallizes in an orthorhombic structure with the Cmc21 spacegroup. The temperature dependent resistivity is enhanced with the application of magnetic field and a resistivity plateau is observed at low temperatures. We find a small dip in resistivity around 30K at 5T field suggesting that there might be a metal-insulator-like transition at higher magnetic fields. A non-saturating magnetoresistance is observed at low temperatures with maximum MR ˜ 94% at 2K and 6T. The value of MR decreases with the increase in temperature. We see a deviation from Kohler's power law which implies that the system comprises of two types of charge carriers.

  7. Electric-field driven insulator-metal transition and tunable magnetoresistance in ZnO thin film

    Science.gov (United States)

    Zhang, Le; Chen, Shanshan; Chen, Xiangyang; Ye, Zhizhen; Zhu, Liping

    2018-04-01

    Electrical control of the multistate phase in semiconductors offers the promise of nonvolatile functionality in the future semiconductor spintronics. Here, by applying an external electric field, we have observed a gate-induced insulator-metal transition (MIT) with the temperature dependence of resistivity in ZnO thin films. Due to a high-density carrier accumulation, we have shown the ability to inverse change magnetoresistance in ZnO by ionic liquid gating from 10% to -2.5%. The evolution of photoluminescence under gate voltage was also consistent with the MIT, which is due to the reduction of dislocation. Our in-situ gate-controlled photoluminescence, insulator-metal transition, and the conversion of magnetoresistance open up opportunities in searching for quantum materials and ZnO based photoelectric devices.

  8. Magnetoresistance and magnetostriction of Ni81Fe19 and Co90Fe10 mono- and bilayer films

    International Nuclear Information System (INIS)

    Sahingoz, R.; Hollingworth, M.P.; Gibbs, M.R.J.; Murdoch, S.J.

    2005-01-01

    Monolayer and bilayer films of Ni 81 Fe 19 , Co 90 Fe 10 , Co 90 Fe 10 /Ni 81 Fe 19 , and Ni 81 Fe 19 /Co 90 Fe 10 have been grown on thermally oxidized Si. The magnetoresistance (MR) of the samples was measured as a function of applied DC magnetic field, using a four-point probe method. The magnetostriction constant, λ s , was derived from the change of anisotropy field as a function of strain. The dependence of the MR on different combinations of film layers was investigated. The magnetoresistance of the bilayers changed dramatically upon reversal of the layer order. The mono- and bilayer samples with the same material on top of the substrate showed similar MR loop shapes. However, the saturation fields of the bilayers were larger than those for the monolayers. The magnetostriction of all samples was negative. We discuss the consequences for the study and optimization of spin-valve devices

  9. Angular integrals in d dimensions

    Energy Technology Data Exchange (ETDEWEB)

    Somogyi, Gabor

    2011-01-15

    We discuss the evaluation of certain d dimensional angular integrals which arise in perturbative field theory calculations. We find that the angular integral with n denominators can be computed in terms of a certain special function, the so-called H-function of several variables. We also present several illustrative examples of the general result and briefly consider some applications. (orig.)

  10. Angular momentum in general relativity

    International Nuclear Information System (INIS)

    Cresswell, A.; Zimmerman, R.L.; Oregon Univ., Eugene

    1986-01-01

    It is argued that the correct expressions for the angular momentum flux carried by gravitational radiation should follow directly from the momentum currents. Following this approach, the authors compute the angular momentum associated with several different choices of energy-momentum prescriptions. (author)

  11. Angular integrals in d dimensions.

    OpenAIRE

    Somogyi, G.

    2011-01-01

    We discuss the evaluation of certain d dimensional angular integrals which arise in perturbative field theory calculations. We find that the angular integral with n denominators can be computed in terms of a certain special function, the so-called H-function of several variables. We also present several illustrative examples of the general result and briefly consider some applications.

  12. Angular integrals in d dimensions

    International Nuclear Information System (INIS)

    Somogyi, Gabor

    2011-01-01

    We discuss the evaluation of certain d-dimensional angular integrals which arise in perturbative field theory calculations. We find that the angular integral with n denominators can be computed in terms of a certain special function, the so-called H-function of several variables. We also present several illustrative examples of the general result and briefly consider some applications.

  13. Angular integrals in d dimensions

    Science.gov (United States)

    Somogyi, Gábor

    2011-08-01

    We discuss the evaluation of certain d-dimensional angular integrals which arise in perturbative field theory calculations. We find that the angular integral with n denominators can be computed in terms of a certain special function, the so-called H-function of several variables. We also present several illustrative examples of the general result and briefly consider some applications.

  14. Angular integrals in d dimensions

    International Nuclear Information System (INIS)

    Somogyi, Gabor

    2011-01-01

    We discuss the evaluation of certain d dimensional angular integrals which arise in perturbative field theory calculations. We find that the angular integral with n denominators can be computed in terms of a certain special function, the so-called H-function of several variables. We also present several illustrative examples of the general result and briefly consider some applications. (orig.)

  15. Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES

    OpenAIRE

    Samaraweera, R. L.; Liu, H.-C.; Wang, Z.; Reichl, C.; Wegscheider, W.; Mani, R. G.

    2017-01-01

    Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc . The I dc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the obs...

  16. Jet angularity measurements for single inclusive jet production

    Science.gov (United States)

    Kang, Zhong-Bo; Lee, Kyle; Ringer, Felix

    2018-04-01

    We study jet angularity measurements for single-inclusive jet production at the LHC. Jet angularities depend on a continuous parameter a allowing for a smooth interpolation between different traditional jet shape observables. We establish a factorization theorem within Soft Collinear Effective Theory (SCET) where we consistently take into account in- and out-of-jet radiation by making use of semi-inclusive jet functions. For comparison, we elaborate on the differences to jet angularities measured on an exclusive jet sample. All the necessary ingredients for the resummation at next-to-leading logarithmic (NLL) accuracy are presented within the effective field theory framework. We expect semiinclusive jet angularity measurements to be feasible at the LHC and we present theoretical predictions for the relevant kinematic range. In addition, we investigate the potential impact of jet angularities for quark-gluon discrimination.

  17. Angular Momentum in Dwarf Galaxies

    Directory of Open Access Journals (Sweden)

    Del Popolo A.

    2014-06-01

    Full Text Available We study the “angular momentum catastrophe” in the framework of interaction among baryons and dark matter through dynamical friction. By means of Del Popolo (2009 model we simulate 14 galaxies similar to those investigated by van den Bosch, Burkert and Swaters (2001, and calculate the distribution of their spin parameters and the angular momenta. Our model gives the angular momentum distribution which is in agreement with the van den Bosch et al. observations. Our result shows that the “angular momentum catastrophe” can be naturally solved in a model that takes into account the baryonic physics and the exchange of energy and angular momentum between the baryonic clumps and dark matter through dynamical friction.

  18. Tunnel Magnetoresistance Sensors with Magnetostrictive Electrodes: Strain Sensors

    Directory of Open Access Journals (Sweden)

    Ali Tavassolizadeh

    2016-11-01

    Full Text Available Magnetostrictive tunnel magnetoresistance (TMR sensors pose a bright perspective in micro- and nano-scale strain sensing technology. The behavior of TMR sensors under mechanical stress as well as their sensitivity to the applied stress depends on the magnetization configuration of magnetic tunnel junctions (MTJs with respect to the stress axis. Here, we propose a configuration resulting in an inverse effect on the tunnel resistance by tensile and compressive stresses. Numerical simulations, based on a modified Stoner–Wohlfarth (SW model, are performed in order to understand the magnetization reversal of the sense layer and to find out the optimum bias magnetic field required for high strain sensitivity. At a bias field of −3.2 kA/m under a 0.2 × 10 - 3 strain, gauge factors of 2294 and −311 are calculated under tensile and compressive stresses, respectively. Modeling results are investigated experimentally on a round junction with a diameter of 30 ± 0.2 μ m using a four-point bending apparatus. The measured field and strain loops exhibit nearly the same trends as the calculated ones. Also, the gauge factors are in the same range. The junction exhibits gauge factors of 2150 ± 30 and −260 for tensile and compressive stresses, respectively, under a −3.2 kA/m bias magnetic field. The agreement of the experimental and modeling results approves the proposed configuration for high sensitivity and ability to detect both tensile and compressive stresses by a single TMR sensor.

  19. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.

    2011-08-24

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  20. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.; Kosel, Jü rgen; Useinov, N. Kh.; Tagirov, L. R.

    2011-01-01

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.