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Sample records for angular dependent magnetoresistance

  1. Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Sun, J.R.; Zhao, T.Y.

    2009-01-01

    The temperature and magnetic field dependence of angular dependent magnetoresistance (AMR) along two orthogonal directions ([100] and [01]) was investigated in a charge-orbital-ordered Sm0.5Ca0.5MnO3 (SCMO) film grown on (011)-oriented SrTiO3 substrates. A dramatic decrease of AMR magnitude in both...

  2. Angular-dependent magnetoresistance study in Ca0.73La0.27FeAs2: a 'parent' compound of 112-type iron pnictide superconductors.

    Science.gov (United States)

    Xing, Xiangzhuo; Xu, Chunqiang; Li, Zhanfeng; Feng, Jiajia; Zhou, Nan; Zhang, Yufeng; Sun, Yue; Zhou, Wei; Xu, Xiaofeng; Shi, Zhixiang

    2017-12-07

    We report a study of angular-dependent magnetoresistance (AMR) with the magnetic field rotated in the plane perpendicular to the current on a Ca 0.73 La 0.27 FeAs 2 single crystal, which is regarded as a 'parent' compound of 112-type iron pnictide superconductors. A pronounced AMR with twofold symmetry is observed, signifying the highly anisotropic Fermi surface. By further analyzing the AMR data, we find that the Fermi surface above the structural/antiferromagnetic (AFM) transition (T s /T N ) is quasi-two-dimensional (quasi-2D), as revealed by the 2D scaling behavior of the AMR, Δρ/ρ(0) (H, θ)  =  Δρ/ρ(0) (µ 0 Hcosθ), θ being the magnetic field angle with respect to the c axis. While such 2D scaling becomes invalid at temperatures below T s /T N , the three-dimensional (3D) scaling approach by inclusion of the anisotropy of the Fermi surface is efficient, indicating that the appearance of the 3D Fermi surface contributes to anisotropic electronic transport. Compared with other experimental observations, we suspect that the additional 3D hole pocket (generated by the Ca d orbital and As1 p z orbital) around the Γ point in CaFeAs 2 will disappear in the heavily electron doped regime, and moreover, the Fermi surface should be reconstructed across the structural/AFM transition. Besides, a quasi-linear in-plane magnetoresistance with H//ab is observed at low temperatures and its possible origins are also discussed. Our results provide more information to further understand the electronic structure of 112-type IBSs.

  3. Angular-dependent magnetoresistance study in Ca0.73La0.27FeAs2: a "parent" compound of 112-type iron pnictide superconductors.

    Science.gov (United States)

    Xing, Xiangzhuo; Xu, Chunqiang; Li, Zhanfeng; Feng, Jiajia; Zhou, Nan; Zhang, Yufeng; Sun, Yue; Zhou, Wei; Xu, Xiaofeng; Shi, Zhixiang

    2017-11-21

    We report a study of angular-dependent magnetoresistance (AMR) with the magnetic field rotated in the plane perpendicular to the current on a Ca0.73La0.27FeAs2 single crystal, which is regarded as a "parent" compound of 112-type iron pnictide superconductors. A pronounced AMR with twofold symmetry is observed, signifying the highly anisotropic Fermi surface. By further analyzing the AMR data, we find that the Fermi surface above the structural/antiferromagnetic (AFM) transition (Ts/TN) is quasi-two-dimensional (2D), as revealed by the 2D scaling behavior of the AMR, Δρ/ρ(0) (H, θ)=Δρ/ρ(0) (μ0Hcosθ), θ being the magnetic field angle with respect to the c axis. While such a 2D scaling becomes invalid at temperatures below Ts/TN, the three-dimensional (3D) scaling approach by inclusion of the anisotropy of Fermi surface is efficient, indicating that the appearance of 3D Fermi surface contributed to the anisotropic electronic transport. Compared with other experimental observations, we suspect that the additional 3D hole pocket (generated by the Ca d orbital and As1 pz orbital) around the Γ point in CaFeAs2 will disappear in the heavily electron doped regime, and moreover, the Fermi surface should be reconstructed across the structural/AFM transition. Besides, a quasi-linear in-plane magnetoresistance is observed at low temperatures and its possible origins are also discussed. Our results provide more information to further understand the electronic structure of 112-type IBSs. © 2017 IOP Publishing Ltd.

  4. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    KAUST Repository

    Mohammed, Hanan

    2017-06-22

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  5. Angular-dependent magnetoresistance study in Ca0.73La0.27FeAs2: a ‘parent’ compound of 112-type iron pnictide superconductors

    Science.gov (United States)

    Xing, Xiangzhuo; Xu, Chunqiang; Li, Zhanfeng; Feng, Jiajia; Zhou, Nan; Zhang, Yufeng; Sun, Yue; Zhou, Wei; Xu, Xiaofeng; Shi, Zhixiang

    2018-01-01

    We report a study of angular-dependent magnetoresistance (AMR) with the magnetic field rotated in the plane perpendicular to the current on a Ca0.73La0.27FeAs2 single crystal, which is regarded as a ‘parent’ compound of 112-type iron pnictide superconductors. A pronounced AMR with twofold symmetry is observed, signifying the highly anisotropic Fermi surface. By further analyzing the AMR data, we find that the Fermi surface above the structural/antiferromagnetic (AFM) transition (T s/T N) is quasi-two-dimensional (quasi-2D), as revealed by the 2D scaling behavior of the AMR, Δρ/ρ(0) (H, θ)  =  Δρ/ρ(0) (µ 0 Hcosθ), θ being the magnetic field angle with respect to the c axis. While such 2D scaling becomes invalid at temperatures below T s/T N, the three-dimensional (3D) scaling approach by inclusion of the anisotropy of the Fermi surface is efficient, indicating that the appearance of the 3D Fermi surface contributes to anisotropic electronic transport. Compared with other experimental observations, we suspect that the additional 3D hole pocket (generated by the Ca d orbital and As1 p z orbital) around the Γ point in CaFeAs2 will disappear in the heavily electron doped regime, and moreover, the Fermi surface should be reconstructed across the structural/AFM transition. Besides, a quasi-linear in-plane magnetoresistance with H//ab is observed at low temperatures and its possible origins are also discussed. Our results provide more information to further understand the electronic structure of 112-type IBSs.

  6. The tunneling magnetoresistance current dependence on cross sectional area, angle and temperature

    Directory of Open Access Journals (Sweden)

    Z. H. Zhang

    2015-03-01

    Full Text Available The magnetoresistance of a MgO-based magnetic tunnel junction (MTJ was studied experimentally. The magnetoresistance as a function of current was measured systematically on MTJs for various MgO cross sectional areas and at various temperatures from 7.5 to 290.1 K. The resistance current dependence of the MTJ was also measured for different angles between the two ferromagnetic layers. By considering particle and angular momentum conservation of transport electrons, the current dependence of magnetoresistance can be explained by the changing of spin polarization in the free magnetic layer of the MTJ. The changing of spin polarization is related to the magnetoresistance, its angular dependence and the threshold current where TMR ratio equals zero. A phenomenological model is used which avoid the complicated barrier details and also describes the data.

  7. Multidimensional Nature of Molecular Organic Conductors Revealed by Angular Magnetoresistance Oscillations

    Energy Technology Data Exchange (ETDEWEB)

    Pashupati Dhakal, Harukazu Yoshino, Jeong-Il Oh, Koichi Kikuchi, Michael J. Naughton

    2012-09-01

    Angle-dependent magnetoresistance experiments on organic conductors exhibit a wide range of angular oscillations associated with the dimensionality and symmetry of the crystal structure and electron energy dispersion. In particular, characteristics associated with 1, 2, and 3-dimensional electronic motion are separately revealed when a sample is rotated through different crystal planes in a magnetic field. Originally discovered in the TMTSF-based conductors, these effects are particularly pronounced in the related system (DMET){sub 2}I{sub 3}. Here, experimental and computational results for magnetoresistance oscillations in this material, over a wide range of magnetic field orientations, are presented in such a manner as to uniquely highlight this multidimensional behavior. The calculations employ the Boltzmann transport equation that incorporates the system's triclinic crystal structure, which allows for accurate estimates of the transfer integrals along the crystallographic axes, verifying the 1D, 2D and 3D nature of (DMET){sub 2}I{sub 3}, as well as crossovers between dimensions in the electronic behavior.

  8. Angle Dependence of the Orbital Magnetoresistance in Bismuth

    Directory of Open Access Journals (Sweden)

    Aurélie Collaudin

    2015-06-01

    Full Text Available We present an extensive study of angle-dependent transverse magnetoresistance in bismuth, with a magnetic field perpendicular to the applied electric current and rotating in three distinct crystallographic planes. The observed angular oscillations are confronted with the expectations of semiclassic transport theory for a multivalley system with anisotropic mobility and the agreement allows us to quantify the components of the mobility tensor for both electrons and holes. A quadratic temperature dependence is resolved. As Hartman argued long ago, this indicates that inelastic resistivity in bismuth is dominated by carrier-carrier scattering. At low temperature and high magnetic field, the threefold symmetry of the lattice is suddenly lost. Specifically, a 2π/3 rotation of magnetic field around the trigonal axis modifies the amplitude of the magnetoresistance below a field-dependent temperature. By following the evolution of this anomaly as a function of temperature and magnetic field, we map the boundary in the (field, temperature plane separating two electronic states. In the less symmetric state, confined to low temperature and high magnetic field, the three Dirac valleys cease to be rotationally invariant. We discuss the possible origins of this spontaneous valley polarization, including a valley-nematic scenario.

  9. Resistivity dependence of magnetoresistance in Co/ZnO films.

    Science.gov (United States)

    Quan, Zhi-Yong; Zhang, Li; Liu, Wei; Zeng, Hao; Xu, Xiao-Hong

    2014-01-06

    We report the dependence of magnetoresistance effect on resistivity (ρ) in Co/ZnO films deposited by magnetron sputtering at different sputtering pressures with different ZnO contents. The magnitude of the resistivity reflects different carrier transport regimes ranging from metallic to hopping behaviors. Large room-temperature magnetoresistance greater than 8% is obtained in the resistivity range from 0.08 to 0.5 Ω · cm. The magnetoresistance value decreases markedly when the resistivity of the films is less than 0.08 Ω · cm or greater than 0.5 Ω · cm. When 0.08 Ω · cm magnetoresistance effect. When ρ > 0.5 Ω · cm, the spin-independent higher-order hopping (N > 2) comes into play and decreases the tunneling magnetoresistance value. For the samples with ρ magnetoresistance is mainly ascribed to the formation of percolation paths through interconnected elongated metallic Co particles. This observation is significant for the improvement of room-temperature magnetoresistance value for future spintronic devices.

  10. Temperature dependence of magnetoresistance in lanthanum manganite ceramics

    International Nuclear Information System (INIS)

    Gubkin, M.K.; Zalesskii, A.V.; Perekalina, T.M.

    1996-01-01

    Magnetoresistivity in the La0.9Na0.1Mn0.9(V,Co)0.1O3 and LaMnO3+δ ceramics was studied. The temperature dependence of magnetoresistance in these specimens was found to differ qualitatively from that in the La0.9Na0.1MnO3 single crystal (the magnetoresistance value remains rather high throughout the measurement range below the Curie temperature), with the maximum values being about the same (20-40% in the field of 20 kOe). Previously published data on magnetization, high frequency magnetic susceptibility, and local fields at the 139La nuclei of the specimens with similar properties attest to their magnetic inhomogeneity. The computation of the conductivity of the nonuniformly ordered lanthanum manganite was performed according to the mean field theory. The calculation results allow one to interpret qualitatively various types of experimental temperature dependences of magnetoresistance

  11. Dependency injection with AngularJS

    CERN Document Server

    Knol, Alex

    2013-01-01

    This book is a practical, hands-on approach to using dependency injection and implementing test-driven development using AngularJS. Dependency Injection with AngularJS is aimed at developers who are aware of AngularJS but need to get started with using it in real life applications. Also, developers who want to get into test-driven development with AngularJS can use this book as practical guide. Even if you know about dependency injection, it can serve as a good reference on how it is used within AngularJS. Readers are expected to have some experience with JavaScript.

  12. Angular dependence of the exchange bias for the bistable state

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Yuhao [College of Physics and Electronic Information, Shanxi Normal University, Linfen 041004 (China); Research College of materials science, Shanxi Normal University, Linfen 041004 (China); Xu, Xiaohong, E-mail: xuxh@dns.sxnu.edu.cn [Research College of materials science, Shanxi Normal University, Linfen 041004 (China); Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004 (China)

    2017-06-15

    The angular dependence of the exchange bias (ADEB) has been investigated in detail when the exchange-coupled ferromagnetic (FM)/antiferromagnetic (AFM) bilayer is in the bistable state. Complete and incomplete jump phenomena were found at the intrinsic easy and hard axes, when they pass through two special positions making the angular deviation of 58.2826° and 121.7174° from the easy axis of the uniaxial anisotropy, respectively. The combination of these different types of the jump phenomena at the intrinsic easy and hard axes yields five distinct types of the ADEB. The physical condition for each type of ADEB is established. Additionally, the extreme value problem of the exchange bias field and coercivity are also discussed, which is an important technological issue in the design of the magnetoresistive and spintronic devices. These results enable us to make a comprehensive understanding of the experimental ADEB curves.

  13. Systematic study of doping dependence on linear magnetoresistance in p-PbTe

    International Nuclear Information System (INIS)

    Schneider, J. M.; Chitta, V. A.; Oliveira, N. F.; Peres, M. L.; Castro, S. de; Soares, D. A. W.; Wiedmann, S.; Zeitler, U.; Abramof, E.; Rappl, P. H. O.; Mengui, U. A.

    2014-01-01

    We report on a large linear magnetoresistance effect observed in doped p-PbTe films. While undoped p-PbTe reveals a sublinear magnetoresistance, p-PbTe films doped with BaF 2 exhibit a transition to a nearly perfect linear magnetoresistance behaviour that is persistent up to 30 T. The linear magnetoresistance slope ΔR/ΔB is to a good approximation, independent of temperature. This is in agreement with the theory of Quantum Linear Magnetoresistance. We also performed magnetoresistance simulations using a classical model of linear magnetoresistance. We found that this model fails to explain the experimental data. A systematic study of the doping dependence reveals that the linear magnetoresistance response has a maximum for small BaF 2 doping levels and diminishes rapidly for increasing doping levels. Exploiting the huge impact of doping on the linear magnetoresistance signal could lead to new classes of devices with giant magnetoresistance behavior.

  14. Development of a Magneto-Resistive Angular Position Sensor for Space Mechanisms

    Science.gov (United States)

    Hahn, Robert; Schmidt, Tilo; Seifart, Klaus; Olberts, Bastian; Romera, Fernando

    2016-01-01

    Magnetic microsystems in the form of magneto-resistive (MR) sensors are firmly established in automobiles and industrial applications. They are used to measure travel, angle, electrical current, or magnetic fields. MR technology opens up new sensor possibilities in space applications and can be an enabling technology for optimal performance, high robustness and long lifetime at reasonable costs. In some science missions, the technology is already applied, however, the designs are proprietary and case specific, for instance in case of the angular sensors used for JPL/NASA's Mars rover Curiosity [1]. Since 2013 HTS GmbH and Sensitec GmbH have teamed up to develop and qualify a standardized yet flexible to use MR angular sensor for space mechanisms. Starting with a first assessment study and market survey performed under ESA contract, a very strong industry interest in novel, contactless position measurement means was found. Currently a detailed and comprehensive development program is being performed by HTS and Sensitec. The objective of this program is to advance the sensor design up to Engineering Qualification Model level and to perform qualification testing for a representative space application. The paper briefly reviews the basics of magneto-resistive effects and possible sensor applications and describes the key benefits of MR angular sensors with reference to currently operational industrial and space applications. The key applications and specification are presented and the preliminary baseline mechanical and electrical design will be discussed. An outlook on the upcoming development and test stages as well as the qualification program will be provided.

  15. Temperature dependence of anisotropic magnetoresistance in antiferromagnetic Sr{sub 2}IrO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Wang, C.; Seinige, H.; Tsoi, M., E-mail: tsoi@physics.utexas.edu [Physics Department, University of Texas at Austin, Austin, Texas 78712 (United States); Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States); Cao, G. [Center for Advanced Materials, University of Kentucky, Lexington, Kentucky 40506 (United States); Zhou, J.-S.; Goodenough, J. B. [Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)

    2015-05-07

    Temperature-dependent magnetotransport properties of the antiferromagnetic semiconductor Sr{sub 2}IrO{sub 4} are investigated with point-contact devices. The point-contact technique allows to probe very small volumes and, therefore, to look for electronic transport on a microscopic scale. Point-contact measurements with single crystals of Sr{sub 2}IrO{sub 4} were intended to see whether the additional local resistance associated with a small contact area between a sharpened Cu tip and the antiferromagnet shows magnetoresistance (MR) such as that seen in bulk crystals. Point-contact measurements at liquid nitrogen temperature revealed large MRs (up to 28%) for modest magnetic fields (250 mT) applied within an IrO{sub 2} (ab) plane with angular dependence showing a crossover from four-fold to two-fold symmetry with an increasing magnetic field. Point contact measurement exhibits distinctive anisotropic magnetoresistance (AMR) in comparison to a bulk experiment, imposing intriguing questions about the mechanism of AMR in this material. Temperature-dependent MR measurements show that the MR falls to zero at the Neel temperature, but the temperature dependence of the MR ratio differs qualitatively from that of the resistivity. This AMR study helps to unveil the entanglement between electronic transport and magnetism in Sr{sub 2}IrO{sub 4} while the observed magnetoresistive phenomena can be potentially used to sense the antiferromagnetic order parameter in spintronic applications.

  16. Development of Magneto-Resistive Angular Position Sensors for Space Applications

    Science.gov (United States)

    Hahn, Robert; Langendorf, Sven; Seifart, Klaus; Slatter, Rolf; Olberts, Bastian; Romera, Fernando

    2015-09-01

    Magnetic microsystems in the form of magneto- resistive (MR) sensors are firmly established in automobiles and industrial applications. They measure path, angle, electrical current, or magnetic fields. MR technology opens up new sensor possibilities in space applications and can be an enabling technology for optimal performance, high robustness and long lifetime at reasonable costs. In a recent assessment study performed by HTS GmbH and Sensitec GmbH under ESA Contract a market survey has confirmed that space industry has a very high interest in novel, contactless position sensors based on MR technology. Now, a detailed development stage is pursued, to advance the sensor design up to Engineering Qualification Model (EQM) level and to perform qualification testing for a representative pilot space application.The paper briefly reviews the basics of magneto- resistive effects and possible sensor applications and describes the key benefits of MR angular sensors with reference to currently operational industrial and space applications. The results of the assessment study are presented and potential applications and uses of contactless magneto-resistive angular sensors for spacecraft are identified. The baseline mechanical and electrical sensor design will be discussed. An outlook on the EQM development and qualification tests is provided.

  17. Open and closed Fermi surface contributions to the anomalous angular magnetoresistance of α-(BEDT-TTF)2RbHg(SCN)4

    International Nuclear Information System (INIS)

    Athas, G.J.; Klepper, S.J.; Brooks, J.S.; Tokumoto, M.; Kinoshita, N.; Tanaka, Y.

    1994-01-01

    Anomalous angular magnetoresistance (AMR) in the quasi-two dimensional organic conductor α-(BEDT-TTF) 2 RbHg(SCN) 4 is reported. The AMR appears as oscillations with sharp minima below the anitiferromagnetic ordering temperature. The period of these oscillations is anisotropic with respect to the plane of rotation cutting through the conducting layers. Above the ordering temperature, the nature of the AMR changes fundamentally. We propose a model for the AMR that incorporates both open and closed Fermi surfaces, and discuss how temperature and field dependent behaviors of the individual FS contribute to the conductivity. (orig.)

  18. Temperature dependence of magnetoresistance in copper single crystals

    Science.gov (United States)

    Bian, Q.; Niewczas, M.

    2018-03-01

    Transverse magnetoresistance of copper single crystals has been measured in the orientation of open-orbit from 2 K to 20 K for fields up to 9 T. The experimental Kohler's plots display deviation between individual curves below 16 K and overlap in the range of 16 K-20 K. The violation of the Kohler's rule below 16 K indicates that the magnetotransport can not be described by the classical theory of electron transport on spherical Fermi surface with a single relaxation time. A theoretical model incorporating two energy bands, spherical and cylindrical, with different relaxation times has been developed to describe the magnetoresistance data. The calculations show that the electron-phonon scattering rates at belly and neck regions of the Fermi surface have different temperature dependencies, and in general, they do not follow T3 law. The ratio of the relaxation times in belly and neck regions decreases parabolically with temperature as A - CT2 , with A and C being constants.

  19. Probabilistic calculation for angular dependence collision

    International Nuclear Information System (INIS)

    Villarino, E.A.

    1990-01-01

    This collision probabilistic method is broadly used in cylindrical geometry (in one- or two-dimensions). It constitutes a powerful tool for the heterogeneous Response Method where, the coupling current is of the cosine type, that is, without angular dependence at azimuthal angle θ and proportional to μ (cosine of the θ polar angle). (Author) [es

  20. Temperature and angular momentum dependence of the ...

    Indian Academy of Sciences (India)

    Temperature and angular momentum dependence of the quadrupole deformation is studied in the middle of the sd-shell for 28Si and 27Si isotopes using the spherical shell model approach. The shell model calculations have been performed using the standard universal sd-shell (USD) interaction and the canonical ...

  1. Temperature and angular momentum dependence of the ...

    Indian Academy of Sciences (India)

    Abstract. Temperature and angular momentum dependence of the quadrupole deformation is studied in the middle of the sd-shell for 28Si and 27Si isotopes using the spherical shell model ... Department of Physics, University of Kashmir, Srinagar 190 006, India; Inter-University Accelerator Centre, New Delhi 110 067, India ...

  2. Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon p-n Junctions.

    Science.gov (United States)

    Yang, D Z; Wang, T; Sui, W B; Si, M S; Guo, D W; Shi, Z; Wang, F C; Xue, D S

    2015-09-01

    We report a large but asymmetric magnetoresistance in silicon p-n junctions, which contrasts with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors. With temperature decreasing from 293 K to 100 K, the magnetoresistance sharply increases from 50% to 150% under a magnetic field of 2 T. At the same time, an asymmetric magnetoresistance, which manifests itself as a magnetoresistance voltage offset with respect to the sign of magnetic field, occurs and linearly increases with magnetoresistance. More interestingly, in contrast with other materials, the lineshape of anisotropic magnetoresistance in silicon p-n junctions significantly depends on temperature. As temperature decreases from 293 K to 100 K, the width of peak shrinks from 90° to 70°. We ascribe these novel magnetoresistance to the asymmetric geometry of the space charge region in p-n junction induced by the magnetic field. In the vicinity of the space charge region the current paths are deflected, contributing the Hall field to the asymmetric magnetoresistance. Therefore, the observed temperature-dependent asymmetry of magnetoresistance is proved to be a direct consequence of the spatial configuration evolution of space charge region with temperature.

  3. Dependence of Fe/Cr superlattice magnetoresistance on orientation of external magnetic field

    International Nuclear Information System (INIS)

    Ustinov, V.V.; Romashev, L.N.; Minin, V.I.; Semerikov, A.V.; Del', A.R.

    1995-01-01

    The paper presents the results of investigations into giant magnetoresistance of [Fe/Cr] 30 /MgO superlattices obtained using molecular-beam epitaxy under various orientations of magnetic field relatively to the layers of superlattice and to the direction of current flow. Theory of orientation dependence of superlattice magnetoresistance enabling to describe satisfactorily behaviour of magnetoresistance at arbitrary direction of magnetic field on the ground of results of magnetoresistance measurements in magnetic field parallel and perpendicular to plane of layers, is elaborated. It is pointed out that it is possible to obtain field dependence of superlattice magnetization on the ground of measurement results. 9 refs., 6 figs

  4. Verification of angular dependence in MOSFET detector

    International Nuclear Information System (INIS)

    Souza, Clayton H.; Shorto, Julian M.B.; Siqueira, Paulo T.D.; Nunes, Maíra G.; Silva Junior, Iremar A.; Yoriyaz, Hélio

    2017-01-01

    In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of measurement, as well as easy handling. Nevertheless, its true differential is to allow reading of the dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in a patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Experimental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient. (author)

  5. Verification of angular dependence in MOSFET detector

    Energy Technology Data Exchange (ETDEWEB)

    Souza, Clayton H.; Shorto, Julian M.B.; Siqueira, Paulo T.D.; Nunes, Maíra G.; Silva Junior, Iremar A.; Yoriyaz, Hélio, E-mail: chsouza@usp.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2017-07-01

    In vivo dosimetry is an essential tool for quality assurance programs, being a procedure commonly performed with thermoluminescent dosimeters (TLDs) or diodes. However, a type of dosimeter that has increasing popularity in recent years is the metal-oxide-semiconductor field effect transistor (MOSFET) detector. MOSFET dosimeters fulfill all the necessary characteristics to realize in vivo dosimetry since it has a small size, good precision and feasibility of measurement, as well as easy handling. Nevertheless, its true differential is to allow reading of the dose in real time, enabling immediate intervention in the correction of physical parameters deviations and anticipation of small anatomical changes in a patient during treatment. In order for MOSFET dosimeter to be better accepted in clinical routine, information reporting performance should be available frequently. For this reason, this work proposes to verify reproducibility and angular dependence of a standard sensitivity MOSFET dosimeter (TN-502RD-H) for Cs-137 and Co-60 sources. Experimental data were satisfactory and MOSFET dosimeter presented a reproducibility of 3.3% and 2.7% (1 SD) for Cs-137 and Co-60 sources, respectively. In addition, an angular dependence of up to 6.1% and 16.3% for both radioactive sources, respectively. It is conclusive that MOSFET dosimeter TN-502RD-H has satisfactory reproducibility and a considerable angular dependence, mainly for the Co-60 source. This means that although precise measurements, special attention must be taken for applications in certain anatomical regions in a patient. (author)

  6. Study of the temperature dependence of giant magnetoresistance in metallic granular composite

    International Nuclear Information System (INIS)

    Ju Sheng; Li, Z.-Y.

    2002-01-01

    The temperature dependence of the giant magnetoresistance of metallic granular composite is studied. It is considered that the composite contains both large magnetic grains with surface spin S' and small magnetic impurities. It is found that the decrease of surface spin S' of grain is the main cause of an almost linear decrease of giant magnetoresistance with the increase of temperature in high temperature range. The magnetic impurities, composed of several atoms, lead to an almost linear increase of the giant magnetoresistance with the decrease of temperature in low temperature range. Our calculations are in good agreement with recent experimental data for metallic nanogranular composites

  7. Thickness Dependent Interlayer Magnetoresistance in Multilayer Graphene Stacks

    Directory of Open Access Journals (Sweden)

    S. C. Bodepudi

    2016-01-01

    Full Text Available Chemical Vapor Deposition grown multilayer graphene (MLG exhibits large out-of-plane magnetoresistance due to interlayer magnetoresistance (ILMR effect. It is essential to identify the factors that influence this effect in order to explore its potential in magnetic sensing and data storage applications. It has been demonstrated before that the ILMR effect is sensitive to the interlayer coupling and the orientation of the magnetic field with respect to the out-of-plane (c-axis direction. In this work, we investigate the role of MLG thickness on ILMR effect. Our results show that the magnitude of ILMR effect increases with the number of graphene layers in the MLG stack. Surprisingly, thicker devices exhibit field induced resistance switching by a factor of at least ~107. This effect persists even at room temperature and to our knowledge such large magnetoresistance values have not been reported before in the literature at comparable fields and temperatures. In addition, an oscillatory MR effect is observed at higher field values. A physical explanation of this effect is presented, which is consistent with our experimental scenario.

  8. Tunneling magnetoresistance dependence on the temperature in a ferromagnetic Zener diode

    Energy Technology Data Exchange (ETDEWEB)

    Comesana, E; Aldegunde, M; GarcIa-Loureiro, A, E-mail: enrique.comesana@usc.e [Departamento de Electronica e Computacion, Universidade de Santiago de Compostela, 15782 Santiago de Compostela (Spain)

    2009-11-15

    In the present work we focus on the study of the temperature dependence of the tunnelling current in a ferromagnetic Zener diode. We predict the tunneling magnetoresistance dependence on the temperature. Large doping concentrations lead to magnetic semiconductors with Curie temperature T{sub C} near or over room temperature and this will facilitate the introduction of new devices that make use of the ferromagnetism effects. According to our calculations the tunneling magnetoresistance has the form TMR {proportional_to} (T{sup n}{sub C}-T{sup n}).

  9. Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Pramanik, Tanmoy, E-mail: pramanik.tanmoy@utexas.edu; Roy, Anupam, E-mail: anupam@austin.utexas.edu; Dey, Rik, E-mail: rikdey@utexas.edu; Rai, Amritesh; Guchhait, Samaresh; Movva, Hema C.P.; Hsieh, Cheng-Chih; Banerjee, Sanjay K.

    2017-09-01

    Highlights: • Perpendicular magnetic anisotropy in epitaxial Cr{sub 2}Te{sub 3} has been investigated. • Presence of a relatively strong second order anisotropy contribution is observed. • Magnetization reversal is explained quantitatively using a 1D defect model. • Relative roles of nucleation and pinning in magnetization reversal are discussed. • Domain structures and switching process are visualized by micromagnetic simulation. - Abstract: We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular magnetic anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.

  10. Angular momentum dependence of the nuclear level density parameter

    Directory of Open Access Journals (Sweden)

    Gohil M.

    2014-03-01

    Full Text Available Neutron evaporation spectra alongwith γ-multiplicity has been measured from the 185Re* compound nucleus at the excitation energies ~27 and 37 MeV. Statistical model analysis of the experimental data has been carried out to extract the value of the inverse level density parameter k at different angular momentum regions (J corresponding to different γ-multiplicity. It is observed that, for the present system the value of k remains almost constant for different J. The present results on the angular momentum dependence of the nuclear level density (NLD parameter ã (=A/k, for nuclei with A ~180 is quite different from our earlier measurements in case of light and medium mass systems. The present analysis provides useful information to understand the angular momentum dependence of NLD at different nuclear mass regions.

  11. Angular dose dependence of Matrixx TM and its calibration.

    Science.gov (United States)

    Wolfsberger, Luciant D; Wagar, Matthew; Nitsch, Paige; Bhagwat, Mandar S; Zygmanski, Piotr

    2010-01-28

    One of the applications of MatriXX (IBA Dosimetry) is experimental verification of dose for IMRT, VMAT, and tomotherapy. For cumulative plan verification, dose is delivered for all the treatment gantry angles to a stationary detector. Experimental calibration of MatriXX detector recommended by the manufacturer involves only AP calibration fields and does not address angular dependency of MatriXX. Angular dependency may introduce dose bias in cumulative plan verification if not corrected. For this reason, we characterized angular dependency of MatriXX and developed a method for its calibration. We found relatively large discrepancies in responses to posterior vs. anterior fields for four MatriXX (Evolution series) detectors (up to 11%), and relatively large variability of responses as a function of gantry angle in the gantry angle ranges of 91 degrees-110 degrees and 269 degrees-260 degrees. With our calibration method, the bias due to angular dependency is effectively removed in experimental verification of IMRT and VMAT plans.

  12. Angular dependence of IPEN parallels plates ionization chambers

    International Nuclear Information System (INIS)

    Albuquerque, M. da P.; Caldas, L.V.E.

    1989-01-01

    The angular dependence of parallel plates ionization chambers for X-radiation of low energy is studied, aiming at the correction of any influence that may occur, due to positioning. The national fabrication chambers behaviour is evaluated and the results are compared with imported similar chambers. (C.G.C.) [pt

  13. Angular dependence of EEDF in ion-beam plasma

    International Nuclear Information System (INIS)

    Dudin, S.V.

    1995-01-01

    In a previous paper the results of measurements of electron energy distribution function (EEDF) in ion-beam plasma created by low energy broad ion beam had been presented regardless of the angular dependence of the electron distribution. The present work is specifically aimed towards elucidating the spatial structure of the EEDF in the ion-beam plasma. To solve this problem combination of the techniques of cylindrical probe, large plate probe (5 x 5 mm) and two-grid enegoanalyzer was used. Directional operation of the probes makes possible measurement of angular dependence of electron distribution function which is anisotropic in high energy region. To optimize the construction of the probe-analyzer, experiments with grids were performed, which had different size, mesh, and transparency, under different potentials, and with different distances between grids. Numerical simulation of the analyzer was performed too. It is derived that optimal design for measurements in isotropic plasma is the most plate, thin two-grid probe with maximum angular covering. Investigation of angular dependence of EEDF has shown that the distribution of trapped electrons is completely isotropic, whereas in the energy range of var-epsilon > e var-phi pl (var-phi pl - plasma potential) a strong anisotropy of the EEDF is observed

  14. Magnetoresistive logic and biochip

    International Nuclear Information System (INIS)

    Brueckl, Hubert; Brzeska, Monika; Brinkmann, Dirk; Schotter, J.Joerg; Reiss, Guenter; Schepper, Willi; Kamp, P.-B.; Becker, Anke

    2004-01-01

    While some magnetoresistive devices based on giant magnetoresistance or spin-dependent tunneling are already commercialized, a new branch of development is evolving towards magnetoresistive logic with magnetic tunnel junctions. Furthermore, the new magnetoelectronic effects show promising properties in magnetoresistive biochips, which are capable of detecting even single molecules (e.g. DNA) by functionalized magnetic markers. The unclear limits of this approach are discussed with two model systems

  15. Angular dependence of spin-orbit spin-transfer torques

    KAUST Repository

    Lee, Ki-Seung

    2015-04-06

    In ferromagnet/heavy-metal bilayers, an in-plane current gives rise to spin-orbit spin-transfer torque, which is usually decomposed into fieldlike and dampinglike torques. For two-dimensional free-electron and tight-binding models with Rashba spin-orbit coupling, the fieldlike torque acquires nontrivial dependence on the magnetization direction when the Rashba spin-orbit coupling becomes comparable to the exchange interaction. This nontrivial angular dependence of the fieldlike torque is related to the Fermi surface distortion, determined by the ratio of the Rashba spin-orbit coupling to the exchange interaction. On the other hand, the dampinglike torque acquires nontrivial angular dependence when the Rashba spin-orbit coupling is comparable to or stronger than the exchange interaction. It is related to the combined effects of the Fermi surface distortion and the Fermi sea contribution. The angular dependence is consistent with experimental observations and can be important to understand magnetization dynamics induced by spin-orbit spin-transfer torques.

  16. Angular dependence of the parallel plate ionization chambers of Ipen

    International Nuclear Information System (INIS)

    Albuquerque, M. da P.P.; Caldas, L.

    1989-08-01

    The ionization chambers with parallel plates designed and constructed at IPEN for the dosimetry of soft X-radiation fields were studied in relation to thein angular dependence between O and +- 90 0 . The objective of this study is to verify the chambers response variation for small positioning errors during the field dosimetry used in Radiotherapy. The results were compared with those of commercial parallel plate ionization chambers used as secondary and testiary standards. (author) [pt

  17. Strong temperature dependence of extraordinary magnetoresistance correlated to mobility in a two-contact device

    KAUST Repository

    Sun, Jian

    2012-02-21

    A two-contact extraordinary magnetoresistance (EMR) device has been fabricated and characterized at various temperatures under magnetic fields applied in different directions. Large performance variations across the temperature range have been found, which are due to the strong dependence of the EMR effect on the mobility. The device shows the highest sensitivity of 562ω/T at 75 K with the field applied perpendicularly. Due to the overlap between the semiconductor and the metal shunt, the device is also sensitive to planar fields but with a lower sensitivity of about 20 to 25% of the one to perpendicular fields. © 2012 The Japan Society of Applied Physics.

  18. Polarization dependent asymmetric magneto-resistance features in nanocrystalline diamond films

    International Nuclear Information System (INIS)

    Bhattacharyya, Somnath; Churochkin, Dmitry

    2014-01-01

    Polar angle-dependence of magneto-resistance (AMR) in heavily nitrogen-incorporated ultra-nanocrystalline diamond (UNCD) films is recorded by applying high magnetic fields, which shows strong anisotropic features at low temperatures. The temperature-dependence of MR and AMR can reveal transport in the weak-localization regime, which is explained by using a superlattice model for arbitrary values of disorder and angles. While a propagative Fermi surface model explains the negative MR features for low degree of disorder the azimuthal angle-dependent MR shows field dependent anisotropy due to the aligned conducting channels on the layers normal to film growth direction. The analysis of MR and AMR can extract the temperature dependence of dephasing time with respect to the elastic scattering time which not only establishes quasi-two dimensional features in this system but also suggests a potential application in monitoring the performance of UNCD based quantum devices.

  19. Nuclear level density parameter 's dependence on angular momentum

    International Nuclear Information System (INIS)

    Aggarwal, Mamta; Kailas, S.

    2009-01-01

    Nuclear level densities represent a very important ingredient in the statistical Model calculations of nuclear reaction cross sections and help to understand the microscopic features of the excited nuclei. Most of the earlier experimental nuclear level density measurements are confined to low excitation energy and low spin region. A recent experimental investigation of nuclear level densities in high excitation energy and angular momentum domain with some interesting results on inverse level density parameter's dependence on angular momentum in the region around Z=50 has motivated us to study and analyse these experimental results in a microscopic theoretical framework. In the experiment, heavy ion fusion reactions are used to populate the excited and rotating nuclei and measured the α particle evaporation spectra in coincidence with ray multiplicity. Residual nuclei are in the range of Z R 48-55 with excitation energy range 30 to 40 MeV and angular momentum in 10 to 25. The inverse level density parameter K is found to be in the range of 9.0 - 10.5 with some exceptions

  20. Angular momentum dependence of the nuclear level density parameter

    International Nuclear Information System (INIS)

    Aggarwal, Mamta; Kailas, S.

    2010-01-01

    Dependence of nuclear level density parameter on the angular momentum and temperature is investigated in a theoretical framework using the statistical theory of hot rotating nuclei. The structural effects are incorporated by including shell correction, shape, and deformation. The nuclei around Z≅50 with an excitation energy range of 30 to 40 MeV are considered. The calculations are in good agreement with the experimentally deduced inverse level density parameter values especially for 109 In, 113 Sb, 122 Te, 123 I, and 127 Cs nuclei.

  1. Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li

    Science.gov (United States)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2016-03-01

    We evaluate the temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance (AMR) in (Ga,Mn)As codoped with Li by magnetotransport measurements. We find that the signs of in-plane uniaxial anisotropy and AMR change at the same temperature of ˜75 K, and that the sign of planar Hall effect does not depend on temperature.

  2. Concentration dependence of inhomogeneous broadening in perturbed angular correlation spectroscopy

    Science.gov (United States)

    Moreno, Carlos; Hodges, Jeffery A.; Park, Tyler; Stufflebeam, Michael; Evenson, W.; Matheson, P.; Zacate, M. O.

    2008-10-01

    Since real crystals always include defects, the effect of the defects on crystal properties depends on how many defects are present, i.e. on defect concentration. In perturbed angular correlation (PAC), these defects produce damping of the correlation signal in time and broadening of the frequency spectrum. This ``inhomogeneous broadening'' depends quantitatively on defect concentration, so the size of the broadening in a PAC spectrum can be a measure of the concentration of defects. Using simulated PAC spectra and independent component analysis to obtain the probability distribution function for electric field gradient (EFG) components, we have found defect concentration-dependent parameters for the probability functions. This allows us to calculate broadened PAC spectra for any selected defect concentration. It also allows us to fit defect concentration from an experimental PAC spectrum. This work will be applied initially to broadened PAC data from β-Mn, Al-doped β-Mn, and Sr2RuO4.

  3. Angle-dependent magnetoresistance and quantum oscillations in high-mobility semimetal LuPtBi

    KAUST Repository

    Xu, Guizhou

    2017-03-14

    The recent discovery of ultrahigh mobility and large positive magnetoresistance in topologically non-trivial Half-Heusler semimetal LuPtBi provides a unique playground for studying exotic physics and significant perspective for device applications. As an fcc-structured electron-hole-compensated semimetal, LuPtBi theoretically exhibits six symmetrically arranged anisotropic electron Fermi pockets and two nearly-spherical hole pockets, offering the opportunity to explore the physics of Fermi surface with a simple angle-related magnetotransport properties. In this work, through the angle-dependent transverse magnetoresistance measurements, in combination with high-field SdH quantum oscillations, we achieved to map out a Fermi surface with six anisotropic pockets in the high-temperature and low-field regime, and furthermore, identify a possible magnetic field driven Fermi surface change at lower temperatures. Reasons account for the Fermi surface change in LuPtBi are discussed in terms of the field-induced electron evacuation due to Landau quantization.

  4. Angular dependence of the coercivity in arrays of ferromagnetic nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Holanda, J. [Departamento de Física, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil); Silva, D.B.O. [Pós-Graduação em Ciência de Materiais, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil); Padrón-Hernández, E., E-mail: padron@df.ufpe.br [Departamento de Física, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil); Pós-Graduação em Ciência de Materiais, Universidade Federal de Pernambuco, Recife 50670-901, PE (Brazil)

    2015-03-15

    We present a new magnetic model for polycrystalline nanowires arrays in porous anodic aluminum oxide. The principal consideration here is the crystalline structure and the morphology of the wires and them the dipolar interactions between the crystals into the wire. Other aspect here is the direct calculation of the dipolar energy for the interaction of one wire with the others in the array. The free energy density was formulated for polycrystalline nanowires arrays in order to determinate the anisotropy effective field. It was using the microstructure study by scanning and transmission electron microscopy for the estimation of the real structure of the wires. After the structural analysis we used the angular dependences for the coercivity field and for the remnant magnetization to determine the properties of the wires. All analysis were made by the theory treatment proposed by Stoner and Wohlfarth.

  5. Temperature dependence of magnetoresistive properties in bottom spin valve films employing very thin Cu spacers

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Soonchul [School of Electronic Engineering, Soongsil University, Seoul 156-743 (Korea, Republic of)]. E-mail: jschul@ssu.ac.kr; Seigler, Michael A. [Seagate Research, Pittsburgh, PA 15222 (United States)

    2007-09-15

    Temperature dependence of magnetoresistive properties in bottom spin valve films having very thin Cu spacers are reported. NiFeCr55 A/NiFe10 A/IrMn70 A/CoFetA/Ru4 A/CoFe(t+3)A/Cu/CoFe tA/NiFe10 A/Ta50 A bottom spin valve films were deposited using a DC magnetron sputter deposition system. Magnetoresistance (MR) ratio reached a maximum of 13.5% and 11.9% at the Cu thickness of 10.4 A, when the thickness of the CoFe layers t was 20 and 10 A, respectively. Unlike the top spin valves reported earlier, the dip in the MR ratio was not observed when the interlayer coupling between the free layer and reference layer became zero. Sheet resistance change (DR{sub s}) reached a maximum of 4.22 {omega}/{open_square} at the Cu spacer thickness of 10 A when the CoFe thickness t was 10 A. Temperature dependences of MR ratio, DR{sub s}, interlayer coupling field (H {sub i}), and sensitivity showed mostly monotonic decrease as the temperature was increased up to 200 deg. C. It turns out that DR{sub s} for the film having 10.4 A of Cu spacer thickness at 200 deg. C was larger than the DR{sub s} for the film having 20 A of Cu spacer thickness at 40 deg. C. This suggests a high output voltage of the spin valve sensor made of the thin Cu spacer even at high operating temperature. These very thin Cu spacers could be utilized for very small devices where the interlayer coupling field is dominated by high demagnetizing fields.

  6. Signature of the magnetic transitions in Y0.2Pr0.8Ba2Cu3O7-δ in high field angular magnetoresistivity

    International Nuclear Information System (INIS)

    Sandu, V; Zhang, C; Almasan, C C; Taylor, B J; Maple, M B

    2006-01-01

    In-plane (ab) and out-of-plane (c-axis) magnetoresistivity display different symmetry crossovers and/or transitions in 14 T magnetic field applied parallel to the CuO 2 planes. The in-plane magnetoresistivity crosses over from four-fold symmetry below 6 K to two-fold symmetry at higher temperatures, which becomes dominant at temperatures higher than 40 K. The out-of-plane magnetoresistivity changes at 17 K from four fold symmetry to ordinary sin 2 θ at higher temperatures. The behaviour of the c-axis magnetoresistivity can be ascribed to the antiferromagnetic ordering of the Pr spins whereas the symmetry change of the in-plane magnetoresistivity at 6 K might be attributed to commensurate to incommensurate crossovers of the spin subsystems. The antiferromagnetic order of the Cu(2) sublattice seems to have only a week effect on the magnetoresistivity

  7. Magnetoresistance effect in (La, Sr)MnO3 bicrystalline films.

    Science.gov (United States)

    Alejandro, G; Steren, L B; Pastoriza, H; Vega, D; Granada, M; Sánchez, J C Rojas; Sirena, M; Alascio, B

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La(0.75)Sr(0.25)MnO(3) films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  8. Magnetoresistance effect in (La, Sr)MnO{sub 3} bicrystalline films

    Energy Technology Data Exchange (ETDEWEB)

    Alejandro, G; Pastoriza, H; Granada, M; Rojas Sanchez, J C; Sirena, M; Alascio, B [Centro Atomico Bariloche (CNEA), Av. Bustillo 9500, 8400 San Carlos de Bariloche, Pcia. de Rio Negro (Argentina); Steren, L B; Vega, D, E-mail: galejand@cab.cnea.gov.a [Centro Atomico Constituyentes (CNEA), 1650 San MartIn, Pcia. de Buenos Aires (Argentina)

    2010-09-01

    The angular dependence of the magnetoresistance effect has been measured on bicrystalline La{sub 0.75}Sr{sub 0.25}MnO{sub 3} films. The measurements have been performed on an electronically lithographed Wheatstone bridge. The study of the angular dependence of both the magnetoresistance and the resistance of single-crystalline and grain-boundary regions of the samples allowed us to isolate two contributions of low-field magnetoresistance in manganites. One of them is associated with the spin-orbit effect, i.e. the anisotropic magnetoresistance of ferromagnetic compounds, and the other one is related to spin-disorder regions at the grain boundary. Complementary x-ray diffraction, ferromagnetic resonance and low temperature magnetization experiments contribute to the characterization of the magnetic anisotropy of the samples and the general comprehension of the problem.

  9. Energy and angular dependence of thermoluminescent materials for beta monitoring; Dependencia energetica e angular de materiais termoluminescentes para monitoracao beta

    Energy Technology Data Exchange (ETDEWEB)

    Cecatti, S.G.P. [Fundacao Jorge Duprat Figueiredo de Seguranca e Medicina do Trabalho (FUNDACENTRO), Sao Paulo, SP (Brazil); Caldas, L.V.E. [Instituto de Pesquisas Energeticas e Nucleares, (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2004-07-01

    This work has as objective the study of the energy and angular dependence of different thermoluminescent (TL) materials for an appropriate choice of the material to be used for beta monitoring of workers. Three types of CaSO{sub 4}:Dy + Teflon pellets were studied. The energy dependence was verified using standard sources of beta radiation ({sup 147}Pm, {sup 204}Tl and {sup 90}Sr + {sup 90}Y). For the angular dependence study the pellets were irradiated with beta radiation of the {sup 90}Sr + {sup 90}Y source, varying the incidence angle between 0 deg C and 90 deg C. The CaSO{sub 4}: Dy (50 mg) and of CaSO{sub 4}:Dy (20 mg) pellets presented practically the same high energy dependence, while the CaSO{sub 4}:Dy + 10% C pellets presented a dependence with the energy of 60% in the studied interval. The TL response of the three materials presented an accentuated angular dependence starting from 45 deg C. The dosimeters of CaSO{sub 4}:Dy + 10% C showed to be the most adequate for use in beta monitoring of workers, in relation to the studied characteristics. (author)

  10. Energy and angular dependence of thermoluminescent materials to beta monitoring; Dependencia energetica e angular de materiais termoluminescentes para monitoracao beta

    Energy Technology Data Exchange (ETDEWEB)

    Cecatti, Sonia Garcia Pereira; Caldas, Linda V.E. [Instituto de Pesquisas Energeticas e Nucleares, Sao Paulo, SP (Brazil)]. E-mail: scecatti@fundacentro.gov.br

    2006-11-15

    Energy and angular dependences of different thermoluminescent materials were studied with the objective to verify which type of detector would be the most appropriate for beta monitoring of workers. Three types of CaSO{sub 4}:Dy + teflon pellets were studied. The energy dependence was evaluated using standard beta radiation sources ({sup 147} Pm, {sup 2}''0{sup 4} Tl and {sup 90} Sr+{sup 90} Y). For the angular dependence study, the pellets were exposed to beta radiation of the {sup 9}'0 Sr+{sup 90} Y source, varying the incidence angle between 0 deg C and 90 deg C. In relation to the studied characteristics, the CaSO{sub 4}:Dy + 10% C dosimeters were the most adequate for use in beta monitoring of workers. (author)

  11. Temperature Dependent Magnetoresistance of CeCu2Si2 up to 60 T [Proposal: P14728

    Energy Technology Data Exchange (ETDEWEB)

    Stritzinger, Laurel Elaine Winter [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Lai, Y. [Florida State Univ., Tallahassee, FL (United States); Mcdonald, Ross David [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Baumbach, R. E. [Florida State Univ., Tallahassee, FL (United States)

    2017-03-23

    We recently investigated the chemical substitution series CeCu2Si2-xPx, for x = 0, 0.01, and 0.14, using a contactless tunnel diode oscillator technique. These measurements revealed previously unreported Shubnikov-de Haas oscillations above 45 T with an unusual temperature dependence that could potentially be explained by a high magnetic field transition. To investigate this possible transition, magnetoresistance measurements were desired. However, initial magnetoresistance measurements on CeCu2Si2 showed poor signal-to-noise due to the small value of the sample's resistivity. To overcome this obstacle, we performed micro-structuring of a single crystal specimen to increase the sample's resistance.

  12. Dependences of the Tunnel Magnetoresistance and Spin Transfer Torque on the Sizes and Concentration of Nanoparticles in Magnetic Tunnel Junctions

    Science.gov (United States)

    Esmaeili, A. M.; Useinov, A. N.; Useinov, N. Kh.

    2018-01-01

    Dependences of the tunnel magnetoresistance and in-plane component of the spin transfer torque on the applied voltage in a magnetic tunnel junction have been calculated in the approximation of ballistic transport of conduction electrons through an insulating layer with embedded magnetic or nonmagnetic nanoparticles. A single-barrier magnetic tunnel junction with a nanoparticle embedded in an insulator forms a double-barrier magnetic tunnel junction. It has been shown that the in-plane component of the spin transfer torque in the double-barrier magnetic tunnel junction can be higher than that in the single-barrier one at the same thickness of the insulating layer. The calculations show that nanoparticles embedded in the tunnel junction increase the probability of tunneling of electrons, create resonance conditions, and ensure the quantization of the conductance in contrast to the tunnel junction without nanoparticles. The calculated dependences of the tunnel magnetoresistance correspond to experimental data demonstrating peak anomalies and suppression of the maximum magnetoresistances at low voltages.

  13. Importance of frequency dependent magnetoresistance measurements in analysing the intrinsicality of magnetodielectric effect: A case study

    Science.gov (United States)

    Rai, Hari Mohan; Saxena, Shailendra K.; Mishra, Vikash; Kumar, Rajesh; Sagdeo, P. R.

    2017-08-01

    Magnetodielectric (MD) materials have attracted considerable attention due to their intriguing physics and potential future applications. However, the intrinsicality of the MD effect is always a major concern in such materials as the MD effect may arise also due to the MR (magnetoresistance) effect. In the present case study, we report an experimental approach to analyse and separate the intrinsic and MR dominated contributions of the MD phenomenon. For this purpose, polycrystalline samples of LaGa1-xAxO3 (A = Mn/Fe) have been prepared by solid state reaction method. The purity of their structural phase (orthorhombic) has been validated by refining the X-ray diffraction data. The RTMD (room temperature MD) response has been recorded over a frequency range of 20 Hz to 10 MHz. In order to analyse the intrinsicality of the MD effect, FDMR (frequency dependent MR) by means of IS (impedance spectroscopy) and dc MR measurements in four probe geometry have been carried out at RT. A significant RTMD effect has been observed in selected Mn/Fe doped LaGaO3 (LGO) compositions. The mechanism of MR free/intrinsic MD effect, observed in Mn/Fe doped LGO, has been understood speculatively in terms of modified cell volume associated with the reorientation/retransformation of spin-coupled Mn/Fe orbitals due to the application of magnetic field. The present analysis suggests that in order to justify the intrinsic/resistive origin of the MD phenomenon, FDMR measurements are more useful than measuring only dc MR or analysing the trends of magnetic field dependent change in the dielectric constant and tanδ. On the basis of the present case study, we propose that IS (FDMR) alone can be used as an effective experimental tool to detect and analyse the resistive and intrinsic parts contributing to the MD phenomenon.

  14. Negative magnetoresistance of pitch-based carbon fibers Temperature and pressure dependence

    Science.gov (United States)

    Hambourger, P. D.

    1986-01-01

    The negative transverse magnetoresistance of high-modulus pitch-based carbon fibers has been measured over the temperature range 1.3-4.2 K at ambient pressure and at 4.2 K under hydrostatic pressure up to 16 kbar. At low fields (less than 0.5 torr) the magnitude of the magnetoresistance increases markedly as the temperature is lowered from 4.2 K to 1.3 K, in disagreement with Bright's theoretical model, and decreases with pressure at the rate -0.6 percent/kbar.

  15. History dependent magnetoresistance in lightly doped La2−xSrxCuO4 thin films

    International Nuclear Information System (INIS)

    Shi Xiaoyan; Popović, Dragana; Panagopoulos, C.; Logvenov, G.; Bollinger, A.T.; Božović, I.

    2012-01-01

    The in-plane magnetoresistance (MR) in atomically smooth La 2−x Sr x CuO 4 thin films grown by molecular-beam-epitaxy was measured in magnetic fields B up to 9 T over a wide range of temperatures T. The films, with x=0.03 and x=0.05, are insulating, and the positive MR emerges at T<4K. The positive MR exhibits glassy features, including history dependence and memory, for all orientations of B. The results show that this behavior, which reflects the onset of glassiness in the dynamics of doped holes, is a robust feature of the insulating state.

  16. Temperature-Dependent Three-Dimensional Anisotropy of the Magnetoresistance in WTe_{2}.

    Science.gov (United States)

    Thoutam, L R; Wang, Y L; Xiao, Z L; Das, S; Luican-Mayer, A; Divan, R; Crabtree, G W; Kwok, W K

    2015-07-24

    Extremely large magnetoresistance (XMR) was recently discovered in WTe_{2}, triggering extensive research on this material regarding the XMR origin. Since WTe_{2} is a layered compound with metal layers sandwiched between adjacent insulating chalcogenide layers, this material has been considered to be electronically two-dimensional (2D). Here we report two new findings on WTe_{2}: (1) WTe_{2} is electronically 3D with a mass anisotropy as low as 2, as revealed by the 3D scaling behavior of the resistance R(H,θ)=R(ϵ_{θ}H) with ϵ_{θ}=(cos^{2}θ+γ^{-2}sin^{2}θ)^{1/2}, θ being the magnetic field angle with respect to the c axis of the crystal and γ being the mass anisotropy and (2) the mass anisotropy γ varies with temperature and follows the magnetoresistance behavior of the Fermi liquid state. Our results not only provide a general scaling approach for the anisotropic magnetoresistance but also are crucial for correctly understanding the electronic properties of WTe_{2}, including the origin of the remarkable "turn-on" behavior in the resistance versus temperature curve, which has been widely observed in many materials and assumed to be a metal-insulator transition.

  17. Anomalous magnetoresistance in amorphous metals

    International Nuclear Information System (INIS)

    Kuz'menko, V.M.; Vladychkin, A.N.; Mel'nikov, V.I.; Sudovtsev, A.I.

    1984-01-01

    The magnetoresistance of amorphous Bi, Ca, V and Yb films is investigated in fields up to 4 T at low temperatures. For all metals the magnetoresistance is positive, sharply decreases with growth of temperature and depends anomalously on the magnetic field strength. For amorphous superconductors the results agree satisfactorily with the theory of anomalous magnetoresistance in which allowance is made for scattering of electrons by the superconducting fluctuations

  18. Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices

    Science.gov (United States)

    Mani, R. G.

    2013-01-01

    Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insights into the physical phenomena involved in the associated electronic transport. This study examines a “bell-shape” negative GMR that grows in magnitude with decreasing temperatures in mm-wide devices fabricated from the high-mobility GaAs/AlGaAs 2-Dimensional Electron System (2DES). Experiments show that the span of this magnetoresistance on the magnetic-field-axis increases with decreasing device width, W, while there is no concurrent Hall resistance, Rxy, correction. A multi-conduction model, including negative diagonal-conductivity, and non-vanishing off-diagonal conductivity, reproduces experimental observations. The results suggest that a size effect in the mm-wide 2DES with mm-scale electron mean-free-paths is responsible for the observed “non-ohmic” size-dependent negative GMR. PMID:24067264

  19. Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling.

    Science.gov (United States)

    Vélez, Saül; Golovach, Vitaly N; Bedoya-Pinto, Amilcar; Isasa, Miren; Sagasta, Edurne; Abadia, Mikel; Rogero, Celia; Hueso, Luis E; Bergeret, F Sebastian; Casanova, Fèlix

    2016-01-08

    We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [Phys. Rev. Lett. 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt/Y(3)Fe(5)O(12) bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling.

  20. Study of dependence upon the magnetic field and transport current of the magnetoresistive effect in YBCO-based bulk composites

    International Nuclear Information System (INIS)

    Balaev, D A; Prus, A G; Shaykhutdinov, K A; Gokhfeld, D M; Petrov, M I

    2007-01-01

    The magnetoresistive properties of bulk YBCO + CuO and YBCO+BaPb 0.75 Sn 0.25 O 3 composites for different orientations of external magnetic field H and macroscopic transport current j have been measured. These composites exhibit large magnetoresistance in weak magnetic fields ( 2 θ. This fact suggests that the flux flow in the intergrain boundaries is responsible for the large magnetoresistive effect observed in the composites

  1. Vortex domain structures and dc current dependence of magneto-resistances in magnetic tunnel junctions

    Science.gov (United States)

    Wei, Hong-Xiang; Lu, Qing-Feng; Zhao, Su-Fen; Zhang, Xie-Qun; Feng, Jia-Feng; Han, Xiu-Feng

    2004-09-01

    Microfabrication and the magneto-transport characteristics of the magnetic tunnel junctions (MTJs) with a spin-valve-type structure of Ta (5nm)/Ni79Fe21 (25nm)/Ir22Mn78 (12nm)/Co75Fe25 (4nm)/Al(0.8nm) oxide/Co75Fe25 (4nm)/Ni79Fe21 (20nm)/Ta(5nm) were investigated in this paper. A series of experimental data measured with a MTJ was used to verify a magnon-assisted tunnelling model and theory. Furthermore, a micromagnetics simulation shows that the butterfly-like vortex domain structures can be formed under a current-induced Oersted field, which decreases the net magnetization values of the ferromagnetic electrodes under a large dc current (i.e., in high voltage regimes). It is one of the main reasons for the tunnel magnetoresistance ratios to decrease significantly at high voltage biasing.

  2. Temperature-dependent anisotropic magnetoresistance inversion behaviors in Fe{sub 3}O{sub 4} films

    Energy Technology Data Exchange (ETDEWEB)

    Yoon, Kap Soo [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Hong, Jin Pyo, E-mail: jphong@hanyang.ac.kr [Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791 (Korea, Republic of); Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2017-02-01

    We address the abnormal anisotropic magnetoresistance (AMR) reversal feature of half-metallic polycrystalline Fe{sub 3}O{sub 4} films occurring at a specific temperature. Experimental results revealed a positive to negative MR transition in the Fe{sub 3}O{sub 4} films at 264 K, which reflect the influence of additional domain wall scattering. These features was described by a correlation between domain wall resistance and inversion behavior of AMR with additional domain wall scattering factors. We further describe a possible model based on systematic structural and electrical measurements that employs a temperature-dependent domain wall width and spin diffusion length of the conducting electrons. This model allows for spin-flipping scattering of spin polarized electrons inside a proper domain width.

  3. Flavor-dependent neutrino angular distribution in core-collapse supernovae

    DEFF Research Database (Denmark)

    Tamborra, Irene; Huedepohl, Lorenz; Raffelt, Georg

    2017-01-01

    According to recent studies, the collective flavor evolution of neutrinos in core-collapse supernovae depends strongly on the flavor-dependent angular distribution of the local neutrino radiation field, notably on the angular intensity of the electron-lepton number carried by neutrinos....... To facilitate further investigations of this subject, we study the energy and angle distributions of the neutrino radiation field computed with the Vertex neutrino-transport code for several spherically symmetric (1D) supernova simulations (of progenitor masses 11.2, 15 and 25 M_sun) and explain how to extract...... this information from additional models of the Garching group. Beginning in the decoupling region ("neutrino sphere"), the distributions are more and more forward peaked in the radial direction with an angular spread that is largest for $\

  4. Rotating Hele-Shaw cell with a time-dependent angular velocity

    Science.gov (United States)

    Anjos, Pedro H. A.; Alvarez, Victor M. M.; Dias, Eduardo O.; Miranda, José A.

    2017-12-01

    Despite the large number of existing studies of viscous flows in rotating Hele-Shaw cells, most investigations analyze rotational motion with a constant angular velocity, under vanishing Reynolds number conditions in which inertial effects can be neglected. In this work, we examine the linear and weakly nonlinear dynamics of the interface between two immiscible fluids in a rotating Hele-Shaw cell, considering the action of a time-dependent angular velocity, and taking into account the contribution of inertia. By using a generalized Darcy's law, we derive a second-order mode-coupling equation which describes the time evolution of the interfacial perturbation amplitudes. For arbitrary values of viscosity and density ratios, and for a range of values of a rotational Reynolds number, we investigate how the time-dependent angular velocity and inertia affect the important finger competition events that traditionally arise in rotating Hele-Shaw flows.

  5. Angular dependence of response of dosimeters exposed to an extended radioactive source

    International Nuclear Information System (INIS)

    Manai, K.; Trabelsi, A.; Madouri, F.

    2014-01-01

    This study was carried out to investigate the exposure angular dependence of dosimeters response when exposed to the extended gamma source of an irradiation facility. Using analytical and Monte Carlo analysis, we show that dosimeters response has no angular dependence as claimed by a previous study. The dose rate formula we derived takes into account the path length of the photons in the dosimeter. Experimental data have been used to validate our analytical and Monte Carlo methods. Furthermore, the effects on the dosimeters responses in relation to their sizes response of their size and geometry and orientation have been investigated and, within statistical errors, no angular dependence was found. - Highlights: • We investigate the exposer angle dependence of dosimeter response to a gamma source. • Analytical and Monte Carlo analyses show no angular dependence as claimed by others. • We derive the dose rate formulae taking into account the path length of photons. • Analytical and Monte Carlo models have been validated using experimental data

  6. Angular dose dependency of MatriXX TM and its calibration

    Science.gov (United States)

    Wagar, Matthew; Nitsch, Paige; Bhagwat, Mandar S.; Zygmanski, Piotr

    2010-01-01

    One of the applications of MatriXX (IBA Dosimetry) is experimental verification of dose for IMRT, VMAT, and tomotherapy. For cumulative plan verification, dose is delivered for all the treatment gantry angles to a stationary detector. Experimental calibration of MatriXX detector recommended by the manufacturer involves only AP calibration fields and does not address angular dependency of MatriXX. Angular dependency may introduce dose bias in cumulative plan verification if not corrected. For this reason, we characterized angular dependency of MatriXX and developed a method for its calibration. We found relatively large discrepancies in responses to posterior vs. anterior fields for four MatriXX (Evolution series) detectors (up to 11%), and relatively large variability of responses as a function of gantry angle in the gantry angle ranges of 91°–110° and 269°–260°. With our calibration method, the bias due to angular dependency is effectively removed in experimental verification of IMRT and VMAT plans. PACS number: 87.56Fc

  7. The dependence of the period on the angular amplitude of a simple ...

    African Journals Online (AJOL)

    The interesting properties of a pendulum are that the pendulum executes simple harmonic motion, and that the period of each swing is constant, and depends only on the pendulum length. While it is independent of the weight. The major aim of this paper is to ascertain the minimum angular amplitude at which the error in ...

  8. Dependence on film thickness of grain boundary low-field magnetoresistance in thin films of La0.7Ca0.3MnO3

    International Nuclear Information System (INIS)

    Todd, N. K.; Mathur, N. D.; Blamire, M. G.

    2001-01-01

    The magnetoresistance of grain boundaries in the perovskite manganites is being studied, both in polycrystalline materials, and thin films grown on bicrystal substrates, because of interest in low-field applications. In this article we show that epitaxial films grown on SrTiO 3 bicrystal substrates of 45 degree misorientation show magnetoresistance behavior which is strongly dependent on the thickness of the film. Thin films, e.g., 40 nm, can show a large low-field magnetoresistance at low temperatures, with very sharp switching between distinct high and low resistance states for fields applied in plane and parallel to the boundary. Thicker films show a more complex behavior of resistance as a function of field, and the dependence on the angle between the applied field and the grain boundary is altered. These changes in magnetoresistance behavior are linked to the variation in morphology of the films. Thin films are coherently strained, due to the mismatch with the substrate, and very smooth. Thicker films relax, with the formation of defects, and hence different micromagnetic behavior. [copyright] 2001 American Institute of Physics

  9. Temperature and angular momentum dependence of the quadrupole deformation in sd-shell

    Science.gov (United States)

    Ganai, P. A.; Sheikh, J. A.; Maqbool, I.; Singh, R. P.

    2009-12-01

    Temperature and angular momentum dependence of the quadrupole deformation is studied in the middle of the sd-shell for 28Si and 27Si isotopes using the spherical shell model approach. The shell model calculations have been performed using the standard USD interaction and the canonical partition function constructed from the calculated eigen-solutions. It is shown that the extracted average quadrupole moments show a transitional behavior as a function of temperature and the inferred transitional temperature is shown to vary with angular-momentum. The quadrupole deformation of the individual eigen-states is also analyzed.

  10. Instability in the dense supernova neutrino gas with flavor-dependent angular distributions.

    Science.gov (United States)

    Mirizzi, Alessandro; Serpico, Pasquale Dario

    2012-06-08

    The usual description of self-induced flavor conversions for neutrinos (ν's) in supernovae is based on the simplified assumption that all the ν's of the different species are emitted "half-isotropically" by a common neutrinosphere, in analogy to a blackbody emission. However, realistic supernova simulations show that ν angular distributions at decoupling are far from being half-isotropic and, above all, are flavor dependent. We show that flavor-dependent angular distributions may lead to crossing points in the angular spectra of different ν species (where F(ν(e))=F(ν(x)) and F(ν(e))=F(ν(x))) around which a new multiangle instability can develop. To characterize this effect, we carry out a linearized flavor stability analysis for different supernova neutrino angular distributions. We find that this instability can shift the onset of the flavor conversions toward low radii and produce a smearing of the splitting features found with trivial ν emission models. As a result the spectral differences among ν's of different flavors could be strongly reduced.

  11. Influence of the maximum applied magnetic field on the angular dependence of Magnetic Barkhausen Noise in API5L steels

    Energy Technology Data Exchange (ETDEWEB)

    Martínez-Ortiz, P. [Laboratorio de Evaluación No Destructiva Electromagnética (LENDE), ESIME-SEPI, Edif. Z-4, Instituto Politécnico Nacional, Zacatenco, México D.F. (Mexico); Pérez-Benítez, J.A., E-mail: japerezb@ipn.mx [Laboratorio de Evaluación No Destructiva Electromagnética (LENDE), ESIME-SEPI, Edif. Z-4, Instituto Politécnico Nacional, Zacatenco, México D.F. (Mexico); Espina-Hernández, J.H. [Laboratorio de Evaluación No Destructiva Electromagnética (LENDE), ESIME-SEPI, Edif. Z-4, Instituto Politécnico Nacional, Zacatenco, México D.F. (Mexico); Caleyo, F. [Departamento de Ingeniería Metalúrgica, ESIQIE, UPALM Edif. 7, Instituto Politécnico Nacional, Zacatenco, C.P. 07738 México D.F. (Mexico); Mehboob, N.; Grössinger, R. [Institute of Solid State Physics, Vienna University of Technology, Vienna A-1040 (Austria); Hallen, J.M. [Departamento de Ingeniería Metalúrgica, ESIQIE, UPALM Edif. 7, Instituto Politécnico Nacional, Zacatenco, C.P. 07738 México D.F. (Mexico)

    2016-03-01

    This work studies the influence of the maximum applied magnetic field on the angular dependence of the energy of the Magnetic Barkhausen Noise signal in three different API5L pipeline steels. The results show that the shape of the angular dependence of the Magnetic Barkhausen Noise energy changes with the increase of the amplitude of the applied magnetic field. This phenomenon is a consequence of the presence of unlike magnetization processes at different magnitudes of the applied magnetic field. The outcomes reveal the importance of controlling the value of the maximum applied field as parameter for the improvement of the MBN angular dependence measurements. - Highlights: • Study the angular dependence of MBN with applied field in three pipeline steels. • Reveals the change of this angular dependence with the increase applied field. • Explains this dependence based on the domain wall dynamics theory.

  12. Influence of the maximum applied magnetic field on the angular dependence of Magnetic Barkhausen Noise in API5L steels

    International Nuclear Information System (INIS)

    Martínez-Ortiz, P.; Pérez-Benítez, J.A.; Espina-Hernández, J.H.; Caleyo, F.; Mehboob, N.; Grössinger, R.; Hallen, J.M.

    2016-01-01

    This work studies the influence of the maximum applied magnetic field on the angular dependence of the energy of the Magnetic Barkhausen Noise signal in three different API5L pipeline steels. The results show that the shape of the angular dependence of the Magnetic Barkhausen Noise energy changes with the increase of the amplitude of the applied magnetic field. This phenomenon is a consequence of the presence of unlike magnetization processes at different magnitudes of the applied magnetic field. The outcomes reveal the importance of controlling the value of the maximum applied field as parameter for the improvement of the MBN angular dependence measurements. - Highlights: • Study the angular dependence of MBN with applied field in three pipeline steels. • Reveals the change of this angular dependence with the increase applied field. • Explains this dependence based on the domain wall dynamics theory.

  13. Angular-dependent Raman study of a- and s-plane InN

    Energy Technology Data Exchange (ETDEWEB)

    Filintoglou, K.; Katsikini, M., E-mail: katsiki@auth.gr; Arvanitidis, J.; Lotsari, A.; Dimitrakopulos, G. P.; Vouroutzis, N.; Ves, S. [School of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Christofilos, D.; Kourouklis, G. A. [Chemical Engineering Department, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece); Ajagunna, A. O.; Georgakilas, A. [Microelectronics Research Group, Department of Physics, University of Crete, P.O. Box 2208, GR 71003 Heraklion, Greece and IESL, FORTH, P.O. Box 1385, GR 71110 Heraklion (Greece); Zoumakis, N. [Department of Food Technology, Technological Educational Institute of Thessaloniki, 57400 Sindos (Greece)

    2015-02-21

    Angular-dependent polarized Raman spectroscopy was utilized to study nonpolar a-plane (11{sup ¯}20) and semipolar s-plane (101{sup ¯}1) InN epilayers. The intensity dependence of the Raman peaks assigned to the vibrational modes A{sub 1}(TO), E{sub 1}(TO), and E{sub 2}{sup h} on the angle ψ that corresponds to rotation around the growth axis, is very well reproduced by using expressions taking into account the corresponding Raman tensors and the experimental geometry, providing thus a reliable technique towards assessing the sample quality. The s- and a-plane InN epilayers grown on nitridated r-plane sapphire (Al{sub 2}O{sub 3}) exhibit good crystalline quality as deduced from the excellent fitting of the experimental angle-dependent peak intensities to the theoretical expressions as well as from the small width of the Raman peaks. On the contrary, in the case of the s-plane epilayer grown on non-nitridated r-plane sapphire, fitting of the angular dependence is much worse and can be modeled only by considering the presence of two structural modifications, rotated so as their c-axes are almost perpendicular to each other. Although the presence of the second variant is verified by transmission electron and atomic force microscopies, angular dependent Raman spectroscopy offers a non-destructive and quick way for its quantification. Rapid thermal annealing of this sample did not affect the angular dependence of the peak intensities. The shift of the E{sub 1}(TO) and E{sub 2}{sup h} Raman peaks was used for the estimation of the strain state of the samples.

  14. Transverse thermal magnetoresistance of potassium

    International Nuclear Information System (INIS)

    Newrock, R.S.; Maxfield, B.W.

    1976-01-01

    Results are presented of extensive thermal magnetoresistance measurements on single-crystal and polycrystalline specimens of potassium having residual resistance ratios (RRR) ranging from 1100 to 5300. Measurements were made between 2 and 9 0 K for magnetic fields up to 1.8 T. The observed thermal magnetoresistance cannot be understood on the basis of either semiclassical theories or from the electrical magnetoresistance and the Wiedemann-Franz law. A number of relationships are observed between the thermal and electrical magnetoresistances, many of which are not immediately obvious when comparing direct experimental observations. The thermal magnetoresistance W(T,H) is given reasonably well by W(T,H)T = W(T,0)T + AH + BH 2 , where both A and B are temperature-dependent coefficients. Results show that A = A 0 + A 1 T 3 , while B(T) cannot be expressed as any simple power law. A 0 is dependent on the RRR, while A 1 is independent of the RRR. Two relationships are found between corresponding coefficients in the electrical and thermal magnetoresistance: (i) the Wiedmann--Franz law relates A 0 to the Kohler slope of the electrical magnetoresistance and (ii) the temperature-dependent portions of the electrical and thermal Kohler slopes are both proportional to the electron--phonon scattering contribution to the corresponding zero-field resistance. The latter provides evidence that inelastic scattering is very important in determining the temperature-dependent linear magnetoresistances. Part, but by no means all, of the quadratic thermal resistance is accounted for by lattice thermal conduction. It is concluded that at least a portion of the anomalous electrical and thermal magnetoresistances is due to intrinsic causes and not inhomogeneities or other macroscopic defects

  15. How surface roughness affects the angular dependence of the sputtering yield

    International Nuclear Information System (INIS)

    Hu, A.; Hassanein, A.

    2012-01-01

    Comprehensive model is developed to study the impact of surface roughness on the angular dependence of sputtering yield. Instead of assuming surfaces to be flat or composed of exact self-similar fractals, we developed a new method to describe the surfaces. Random fractal surfaces generated by midpoint displacement algorithm in computer graphics area and Support vector machine algorithm in pattern recognition area are combined with the Monte Carlo ion bombardment simulation code, i.e., Ion Transport in Materials and Compounds (ITMC) code . With this new fractal version of ITMC-F, we successfully simulated the angular dependence of sputtering yield for various ion-target combinations. Examples are given for 5 keV Ar ions bombarding iron, graphite, and silicon surfaces, with the input surface roughness exponent directly depicted from experimental data. Comparison is made with previous models to account for surface roughness and recent experimental data. The ITMC-F code showed good agreement with the experimental data.

  16. Polarization-Dependent Measurements of Molecular Super Rotors with Oriented Angular Momenta

    Science.gov (United States)

    Murray, Matthew J.; Toro, Carlos; Liu, Qingnan; Mullin, Amy S.

    2014-05-01

    Controlling molecular motion would enable manipulation of energy flow between molecules. Here we have used an optical centrifuge to investigate energy transfer between molecular super rotors with oriented angular momenta. The polarizable electron cloud of the molecules interacts with the electric field of linearly polarized light that angularly accelerates over the time of the optical pulse. This process drives molecules into high angular momentum states that are oriented with the optical field and have energies far from equilibrium. High resolution transient IR spectroscopy reveals the dynamics of collisional energy transfer for these super excited rotors. The results of this study leads to a more fundamental understanding of energy balance in non-equilibrium environments and the physical and chemical properties of gases in a new regime of energy states. Results will be presented for several super rotor species including carbon monoxide, carbon dioxide, and acetylene. Polarization-dependent measurements reveal the extent to which the super rotors maintain spatial orientation of high angular momentum states.

  17. Measurement of 240Pu Angular Momentum Dependent Fission Probabilities Using the (α ,α') Reaction

    Science.gov (United States)

    Koglin, Johnathon; Burke, Jason; Fisher, Scott; Jovanovic, Igor

    2017-09-01

    The surrogate reaction method often lacks the theoretical framework and necessary experimental data to constrain models especially when rectifying differences between angular momentum state differences between the desired and surrogate reaction. In this work, dual arrays of silicon telescope particle identification detectors and photovoltaic (solar) cell fission fragment detectors have been used to measure the fission probability of the 240Pu(α ,α' f) reaction - a surrogate for the 239Pu(n , f) - and fission fragment angular distributions. Fission probability measurements were performed at a beam energy of 35.9(2) MeV at eleven scattering angles from 40° to 140°e in 10° intervals and at nuclear excitation energies up to 16 MeV. Fission fragment angular distributions were measured in six bins from 4.5 MeV to 8.0 MeV and fit to expected distributions dependent on the vibrational and rotational excitations at the saddle point. In this way, the contributions to the total fission probability from specific states of K angular momentum projection on the symmetry axis are extracted. A sizable data collection is presented to be considered when constraining microscopic cross section calculations.

  18. Giant Magnetoresistance

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 13; Issue 4. Giant Magnetoresistance - Nobel Prize in Physics 2007. Debakanta Samal P S Anil Kumar. General Article Volume 13 Issue 4 April 2008 pp 343-354. Fulltext. Click here to view fulltext PDF. Permanent link:

  19. Unusual angular and temperature dependence of the upper critical field in UPt/sub 3/

    Energy Technology Data Exchange (ETDEWEB)

    Shivaram, B.S.; Rosenbaum, T.F.; Hinks, D.G.

    1986-06-01

    We report measurements of the upper critical field, H/sub c2/, inclined at various angles with respect to the c-axis in the heavy fermion superconductor UPt/sub 3/. The angular anisotropy observed near T/sub c/ = 0.53K cannot be explained quantitatively by presently available theoretical expressions which consider either isotropic or anisotropic pairing. In addition, we find that the anisotropy apparently disappears at T /approximately/200 mK, only to reemerge at lower temperatures with an opposite sense. We have also studied H/sub c2/ in the basal lane of this hexagonal crystal and find no angular dependence within the limits of our measurements. 15 refs., 4 figs., 1 tab.

  20. Angular and energy dependence of ion bombardment of Mo/Si multilayers

    DEFF Research Database (Denmark)

    Voorma, H.J.; Louis, E.; Bijkerk, F.

    1997-01-01

    the parameters of Kr+ ion bombardment have been optimized within the energy range 300 eV-2 keV and an angular range between 20 degrees and 50 degrees. The optical performance of the Mo/Si multilayers is determined by absolute measurements of the near-normal-incidence reflectivity at 14.4 nm wavelength...... are found to be 2 keV at 50 degrees angle of incidence with respect to the surface. These settings result in 47% reflectivity at 85 degrees (lambda = 14.4 nm) for a 16-period Mo/Si multilayer mirror, corresponding to an interface roughness of 0.21 nm rms. Analysis shows that the interface roughness......, the angular dependence of the etch yield, obtained from the in situ reflectivity measurements, is investigated in order o determine the optimal ion beam parameters for the production of multilayer mirrors on curved substrates....

  1. Anisotropic Magnetoresistance in Antiferromagnetic Sr_{2}IrO_{4}

    Directory of Open Access Journals (Sweden)

    C. Wang

    2014-11-01

    Full Text Available We report point-contact measurements of anisotropic magnetoresistance (AMR in a single crystal of antiferromagnetic Mott insulator Sr_{2}IrO_{4}. The point-contact technique is used here as a local probe of magnetotransport properties on the nanoscale. The measurements at liquid nitrogen temperature reveal negative magnetoresistances (up to 28% for modest magnetic fields (250 mT applied within the IrO_{2} a-b plane and electric currents flowing perpendicular to the plane. The angular dependence of magnetoresistance shows a crossover from fourfold to twofold symmetry in response to an increasing magnetic field with angular variations in resistance from 1% to 14%. We tentatively attribute the fourfold symmetry to the crystalline component of AMR and the field-induced transition to the effects of applied field on the canting of antiferromagnetic-coupled moments in Sr_{2}IrO_{4}. The observed AMR is very large compared to the crystalline AMRs in 3d transition metal alloys or oxides (0.1%–0.5% and can be associated with the large spin-orbit interactions in this 5d oxide while the transition provides evidence of correlations between electronic transport, magnetic order, and orbital states. The finding of this work opens an entirely new avenue to not only gain a new insight into physics associated with spin-orbit coupling but also to better harness the power of spintronics in a more technically favorable fashion.

  2. Magnetoresistance and magnetic breakdown phenomenon in amorphous magnetic alloys

    International Nuclear Information System (INIS)

    Chen Hui-yu; Gong Xiao-yu

    1988-01-01

    Transverse magnetoresistance in amorphous magnetic alloys (Fe/sub 1-//sub x/CO/sub x/) 82 Cu/sub 0.4/Si/sub 4.4/B/sub 13.2/ were measured at room temperature and in the magnetic field range 0--15 kOe. For large magnetic field, three different functional dependences of magnetoresistance on magnetic field strength have been found as follows: (1) Δrho/rho approaches saturation. (2) Δrho/rho increases proportionally to H 2 . (3) For x = 0.15, a sharp Δrho/rho peak appears at a certain magnetic field strength in spatial angular orientation of both magnetic field and electric currents. Case (3) is a magnetic breakdown phenomenon. Magnetic breakdown occurs at the gap between the spin-up and spin-down sheets of the Fermi surface. This gap is the spin-orbit gap and its magnitude is a sensitive function of magnetization. Hence the magnitude and width of the magnetoresistance peak and the magnetic field strength at the peak point are functions of angular orientation of both magnetic field and electric current

  3. Angular-dependent I-V characteristics in borocarbide superconductor YNi2B2C

    International Nuclear Information System (INIS)

    Chu, R M; Chen, Q Y; Chu, W K

    2006-01-01

    We present angular-dependent current-voltage (I-V) measurements in borocarbide YNi 2 B 2 C single crystals near the vortex-glass irreversible line. External magnetic fields are applied along the angle θ with respect to the c-axis. The nonlinear I-V curves reveal scaling behaviour near the transition. Using the scaling analysis, the relevant critical exponents and vortex transition temperatures are determined for all orientations. The data agrees well with the vortex-glass (VG) model. No evidence was found that supports the existence of a Bose-glass (BG) type of transition

  4. Measuring the angular dependence of betatron x-ray spectra in a laser-wakefield accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Albert, F. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Pollock, B. B. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Shaw, J. L. [Univ. of California, Los Angeles, CA (United States); Marsh, K. A. [Univ. of California, Los Angeles, CA (United States); Ralph, J. E. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Chen, Y. -H. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Alessi, D. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Pak, A. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Clayton, C. E. [Univ. of California, Los Angeles, CA (United States); Glenzer, S. H. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Joshi, C. [Univ. of California, Los Angeles, CA (United States)

    2014-07-22

    This paper presents a new technique to measure the angular dependence of betatron x-ray spectra in a laser-wakefield accelerator. Measurements are performed with a stacked image plates spectrometer, capable of detecting broadband x-ray radiation up to 1 MeV. It can provide measurements of the betatron x-ray spectrum at any angle of observation (within a 40 mrad cone) and of the beam profile. A detailed description of our data analysis is given, along with comparison for several shots. As a result, these measurements provide useful information on the dynamics of the electrons are they are accelerated and wiggled by the wakefield.

  5. Angular dependence of the coercivity and remanence of ordered arrays of Co nanowires

    International Nuclear Information System (INIS)

    Lavín, R.; Gallardo, C.; Palma, J.L.; Escrig, J.; Denardin, J.C.

    2012-01-01

    The angular dependence of the coercivity and remanence of ordered hexagonal arrays of Co nanowires prepared using anodic aluminum oxide templates was investigated. The experimental evolution of coercivity as a function of the angle, in which the external field is applied, is interpreted considering micromagnetic simulations. Depending on the angle between the axis of the wire and the applied magnetic field direction our results show that the magnetization reversal mode changes from vortex to a transverse domain wall. Besides, we observed that the dipolar interactions cause a reduction in coercive fields, mainly in the direction of easy magnetization of the nanowires. Good agreement between numerical and experimental data is obtained. - Highlights: ► Angular dependence of the coercivity and remanence of Co nanowire arrays. ► Results show that the magnetization reversal mode changes from vortex to a transverse domain wall. ► Dipolar interactions cause a reduction in coercive fields, which is the strongest in the direction of easy magnetization of the nanowire.

  6. Angular dependence of the attosecond time delay in the H 2 + ion

    Science.gov (United States)

    Kheifets, Anatoli; Serov, Vladislav

    2016-05-01

    Angular dependence of attosecond time delay relative to polarization of light can now be measured using combination of RABBITT and COLTRIMS techniques. This dependence brings particularly useful information in molecules where it is sensitive to the orientation of the molecular axis. Here we extend the theoretical studies of and consider a molecular ion H2+in combination of an attosecond pulse train and a dressing IR field which is a characteristic set up of a RABBIT measurement. We solve the time-dependent Schrödinger equation using a fast spherical Bessel transformation (SBT) for the radial variable, a discrete variable representation for the angular variables and a split-step technique for the time evolution. The use of SBT ensures correct phase of the wave function for a long time evolution which is especially important in time delay calculations. To speed up computations, we implement an expanding coordinate (EC) system which allows us to reach space sizes and time periods unavailable by other techniques. Australian Research Council DP120101805.

  7. Angular dependence of the coercivity and remanence of ordered arrays of Co nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Lavin, R. [Departamento de Fisica, Universidad de Santiago de Chile, USACH, Av. Ecuador 3493, Santiago (Chile); Facultad de Ingenieria, Universidad Diego Portales, UDP, Ejercito 441, Santiago (Chile); Gallardo, C.; Palma, J.L. [Departamento de Fisica, Universidad de Santiago de Chile, USACH, Av. Ecuador 3493, Santiago (Chile); Escrig, J. [Departamento de Fisica, Universidad de Santiago de Chile, USACH, Av. Ecuador 3493, Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology, CEDENNA, Av. Ecuador 3493, Santiago (Chile); Denardin, J.C., E-mail: jcdenardin@gmail.com [Departamento de Fisica, Universidad de Santiago de Chile, USACH, Av. Ecuador 3493, Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology, CEDENNA, Av. Ecuador 3493, Santiago (Chile)

    2012-08-15

    The angular dependence of the coercivity and remanence of ordered hexagonal arrays of Co nanowires prepared using anodic aluminum oxide templates was investigated. The experimental evolution of coercivity as a function of the angle, in which the external field is applied, is interpreted considering micromagnetic simulations. Depending on the angle between the axis of the wire and the applied magnetic field direction our results show that the magnetization reversal mode changes from vortex to a transverse domain wall. Besides, we observed that the dipolar interactions cause a reduction in coercive fields, mainly in the direction of easy magnetization of the nanowires. Good agreement between numerical and experimental data is obtained. - Highlights: Black-Right-Pointing-Pointer Angular dependence of the coercivity and remanence of Co nanowire arrays. Black-Right-Pointing-Pointer Results show that the magnetization reversal mode changes from vortex to a transverse domain wall. Black-Right-Pointing-Pointer Dipolar interactions cause a reduction in coercive fields, which is the strongest in the direction of easy magnetization of the nanowire.

  8. Micromagnetic simulation and the angular dependence of coercivity and remanence for array of polycrystalline nickel nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Fuentes, G.P.; Holanda, J. [Departamento de Física, Universidade Federal de Pernambuco, Recife, PE 50670-901 (Brazil); Guerra, Y.; Silva, D.B.O.; Farias, B.V.M. [Pós-Graduação em Ciência de Materiais, Universidade Federal de Pernambuco, Recife, PE 50670-901 (Brazil); Padrón-Hernández, E., E-mail: padron@df.ufpe.br [Departamento de Física, Universidade Federal de Pernambuco, Recife, PE 50670-901 (Brazil); Pós-Graduação em Ciência de Materiais, Universidade Federal de Pernambuco, Recife, PE 50670-901 (Brazil)

    2017-02-01

    We present here our experimental results for the preparation and characterization of nanowires of nickel and the analysis of the angular dependence of coercivity and remanence using experimental data and micromagnetic simulation. The fabrication was made by using aluminum oxide membranes as templates and deposited nickel by an electrochemical route. The magnetic measurements showed that coercivity and remanence are dependent of the angle of application of the external magnetic field. Our results are different than that expected for the coherent, vortex and transversal modes of the reversion for the magnetic moments. According to the transmission electron microscopy analysis we can see that our nanowires have not a perfect cylindrical format. That is why we have used the ellipsoids chain model for better understanding the real structure of wires and its relation with the magnetic behavior. In order to generate theoretical results for this configuration we have made micromagnetic simulation using Nmag code. Our numerical results for the realistic distances are in correspondence with the magnetic measurements and we can see that there are contradictions if we assume the transverse reversal mode. Then, we can conclude that structure of nanowires should be taken into account to understand the discrepancies reported in the literature for the reversion mechanism in arrays of nickel nanowires. - Highlights: • We present answers for the problem of angular dependence for the coercivity and remanence. • Experimental and theoretical results confirmed the great importance of the real structure. • Micromagnetic calculations confirmed the importance of the real structure.

  9. Bias dependence of tunnel magnetoresistance in spin filtering tunnel junctions: Experiment and theory

    Science.gov (United States)

    Lüders, U.; Bibes, M.; Fusil, S.; Bouzehouane, K.; Jacquet, E.; Sommers, C. B.; Contour, J.-P.; Bobo, J.-F.; Barthélémy, A.; Fert, A.; Levy, P. M.

    2007-10-01

    A spin filter is a type of magnetic tunnel junction in which only one of the electrodes is magnetic and the insulating barrier is ferro- or ferrimagnetic. We report on spin-dependent transport measurements and their theoretical analysis in epitaxial spin filters integrating a tunnel barrier of the high-Curie-temperature ferrimagnetic spinel NiFe2O4 , with half-metallic La2/3Sr1/3MnO3 and Au electrodes. A positive tunnel magnetoresonance of up to ˜50% is obtained at low temperature, which we find decreases with bias voltage. In view of these experimental results, we propose a theoretical treatment of the transport properties of spin filters with epitaxial magnetic barriers, based on an elliptical variation of the decay rates within the spin-dependent gaps in analogy with what was calculated for nonmagnetic barrier materials such as MgO or SrTiO3 . Whereas the spin filtering efficiency for zero bias is of one sign, we show that this can easily change with bias; the degree of change hinges on the energy variation of the majority and minority spin decay rates of the transmission across the barrier. We point out some shortcomings of approaches based on models in which the transmission is related to spin-dependent barrier heights, and some implications for future experimental and theoretical research on spin filters.

  10. Tunneling anisotropic magnetoresistance in single-molecule magnet junctions

    Science.gov (United States)

    Xie, Haiqing; Wang, Qiang; Jiao, Hujun; Liang, J.-Q.

    2012-08-01

    We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling anisotropic magnetoresistance (TAMR), which varies with the angle between the magnetization direction of ferromagnetic lead and the easy axis of SMM. The angular dependence of TAMR can serve as a probe to determine experimentally the easy axis of SMM. Moreover, it is demonstrated that both the magnitude and the sign of TAMR are tunable by the bias voltage, suggesting a new spin-valve device with only one magnetic electrode in molecular spintronics.

  11. Study on the angular dependence of personal exposure dosimeter - Focus on thermoluminescent dosimeter and photoluminescent dosimeter

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Kyung-Rae [Department of Radiological Technology, Gwangju Health College University (Korea, Republic of); Department of Nuclear Engineering, Chosun University (Korea, Republic of); Kweon, Dae Cheol [Department of Radiologic Science, Shin Heung College University (Korea, Republic of); Chung, Woon-Kwan, E-mail: wkchung@chosun.ac.kr [Department of Nuclear Engineering, Chosun University (Korea, Republic of); Goo, Eun-Hoe [Department of Diagnostic Radiology, Seoul National University Hospital (Korea, Republic of); Department of Physics, Soonchunhyang University (Korea, Republic of); Dieter, Kevin [Department of Physical Therapy, Gwangju Health College University (Korea, Republic of); Choe, Chong-Hwan [Department of White Memorial Medical Center (United States)

    2011-02-15

    Radiation management departments place more emphasis on the accuracy of measurements than on the increase in the average dose and personal exposure dose from the use of radiation equipment and radioactive isotopes. Although current measurements are taken using devices, such as film badge dosimeters, pocket dosimeters and thermoluminescent dosimeters (TLDs), this study compared the angular dependence between the widely used TLDs and photoluminescent dosimeter (PLDs) in order to present primary data and evaluate the utility of PLD as a new dosimeter device. For X-ray fluoroscopy, a whole body phantom was placed on a table with a setting for the G-I technical factors fixed at a range of approximately 40 cm with a range of {+-}90{sup o} at an interval scale of 15{sup o} from the center location of an average radiological worker for PLDs (GD-450) and TLDs (Carot). This process was repeated 10 times, and at each time, the cumulative dosage was interpreted from 130 dosimeters using TLDs (UD-710R, Panasonic) and PLDs (FGD-650). The TLD and PLD showed a 52% and 23% decrease in the depth dosage from 0{sup o} to -90{sup o}, respectively. Therefore, PLDs have a lower angular dependence than TLDs.

  12. Optical near-field studies of waveguiding organic nanofibers by angular dependent excitation

    DEFF Research Database (Denmark)

    Maibohm, Christian

      Optical near-field studies of waveguiding organic nanofibers by angular dependent excitation.   Authors: Christian Maibohm¹, Tomasz Kawalec¹, Vladimir G. Bordo² and Horst-Günter Rubahn¹. Institutions: 1) NanoSYD, MCI, University of southern Denmark, DK- 6400         Sønderborg Denmark .        ......  Optical near-field studies of waveguiding organic nanofibers by angular dependent excitation.   Authors: Christian Maibohm¹, Tomasz Kawalec¹, Vladimir G. Bordo² and Horst-Günter Rubahn¹. Institutions: 1) NanoSYD, MCI, University of southern Denmark, DK- 6400         Sønderborg Denmark...... .                    2) Institute of General Physics, Russian Academy of Science, 119991 Moscow, Russia. Abstract:   Single crystalline organic nanofibers of para-phenylene are grown in UHV by MBE and dipole assisted self-assembly. In the optical far-field the fluorescence from a single nanofiber is spectrally well...

  13. Excitation energy and angular momentum dependence of the nuclear level densities

    International Nuclear Information System (INIS)

    Razavi, R.; Kakavand, T.; Behkami, A. N.

    2007-01-01

    We have investigated the excitation energy (E) dependence of nuclear level density for Bethe formula and constant temperature model. The level density parameter aa nd the back shifted energy from the Bethe formula are obtained by fitting the complete level schemes. Also the level density parameters from the constant temperature model have been determined for several nuclei. we have shown that the microscopic theory provides more precise information on the nuclear level densities. On the other hand, the spin cut-off parameter and effective moment of inertia are determined by studying of the angular momentum (J) dependence of the nuclear level density, and effective moment of inertia is compared with rigid body value.

  14. History dependent magnetoresistance in lightly doped La{sub 2-x}Sr{sub x}CuO{sub 4} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shi Xiaoyan [National High Magnetic Field Laboratory and Department of Physics, Florida State University, Tallahassee, FL 32310 (United States); Popovic, Dragana, E-mail: dragana@magnet.fsu.edu [National High Magnetic Field Laboratory and Department of Physics, Florida State University, Tallahassee, FL 32310 (United States); Panagopoulos, C. [Department of Physics, University of Crete and FORTH, GR-71003 Heraklion (Greece); Division of Physics and Applied Physics, Nanyang Technological University (Singapore); Logvenov, G.; Bollinger, A.T.; Bozovic, I. [Brookhaven National Laboratory, Upton, NY 11973 (United States)

    2012-06-01

    The in-plane magnetoresistance (MR) in atomically smooth La{sub 2-x}Sr{sub x}CuO{sub 4} thin films grown by molecular-beam-epitaxy was measured in magnetic fields B up to 9 T over a wide range of temperatures T. The films, with x=0.03 and x=0.05, are insulating, and the positive MR emerges at T<4K. The positive MR exhibits glassy features, including history dependence and memory, for all orientations of B. The results show that this behavior, which reflects the onset of glassiness in the dynamics of doped holes, is a robust feature of the insulating state.

  15. Phase transition and angular momentum dependence of correlations in the rotational spectra of Ne20 and Ne22

    International Nuclear Information System (INIS)

    Satpathy, L.; Schmid, K.W.; Krewald, S.; Faessler, A.

    1974-01-01

    Multi-Configuration-Hartree-Fock (MCHF) calculations with angular momentum projection before the variation of the internal degree of freedom have been performed for the nuclei Ne 20 and Ne 22 . This procedure yields different correlated intrinsic states for the different members of a rotational band. Thus, the angular momentum dependence of correlations has been studied. Experimentally, the ground state spectra of Ne 20 and Ne 22 show properties similar to the phase transitions observed in some rare earth nuclei which have been well reproduced through the present calculations. The calculated spectra show a significant improvement compared to the ones obtained by variation before the angular momentum projection is effected. (author)

  16. Angular multiplexing holograms of four images recorded on photopolymer films with recording-film-thickness-dependent holographic characteristics

    Science.gov (United States)

    Osabe, Keiichi; Kawai, Kotaro

    2017-03-01

    In this study, angular multiplexing hologram recording photopolymer films were studied experimentally. The films contained acrylamide as a monomer, eosin Y as a sensitizer, and triethanolamine as a promoter in a polyvinyl alcohol matrix. In order to determine the appropriate thickness of the photopolymer films for angular multiplexing, photopolymer films with thicknesses of 29-503 μm were exposed to two intersecting beams of a YVO laser at a wavelength of 532 nm to form a holographic grating with a spatial frequency of 653 line/mm. The diffraction efficiencies as a function of the incident angle of reconstruction were measured. A narrow angular bandwidth and high diffraction efficiency are required for angular multiplexing; hence, we define the Q value, which is the diffraction efficiency divided by half the bandwidth. The Q value of the films depended on the thickness of the films, and was calculated based on the measured diffraction efficiencies. The Q value of a 297-μm-thick film was the highest of the all films. Therefore, the angular multiplexing experiments were conducted using 300-μm-thick films. In the angular multiplexing experiments, the object beam transmitted by a square aperture was focused by a Fourier transform lens and interfered with a reference beam. The maximum order of angular multiplexing was four. The signal intensity that corresponds to the squared-aperture transmission and the noise intensity that corresponds to transmission without the square aperture were measured. The signal intensities decreased as the order of angular multiplexing increased, and the noise intensities were not dependent on the order of angular multiplexing.

  17. Secondary-electron-emission spectroscopy of tungsten: Angular dependence and phenomenology

    DEFF Research Database (Denmark)

    Willis, Roy F.; Christensen, Niels Egede

    1978-01-01

    Angle-resolved energy-distribution measurements of secondary-electron emission (SEE) from metals reveal spectral fine structure that relates directly to the density distribution of the one-electron states throughout E-K→ space located above the vacuum level Ev. The angular dependence of the SEE...... of basically two contributions JSEEtotal=∫0πdΩ∫0EmaxjSEE (E, Ω)dE=JSEEbulk+JSEEsurface. The bulk contribution represents emission due to Bloch waves propagating out of states in the semi-infinite crystal; the surface contribution represents that part of the current due to evanescent waves at the metal-vacuum...... interface. In addition, transmission-induced spectral features are observed (transmission resonances), which are not related to the density-of-states fine structure, but are due to a quantum-mechanical enhancement in the escape probability arising from wave-function matching at the emitter-vacuum interface...

  18. Angular and dose dependence of CR-39 neutron response for shape-selected tracks

    CERN Document Server

    Tam, N C; Lakosi, L

    1999-01-01

    A shape selection method corresponding to an energy discrimination was used to eliminate unwanted events disturbing evaluation of CR-39 detectors in detecting tracks induced by particles both of perpendicular and oblique incidence. The angular dependence of the response was examined, detecting fast neutrons from sup 2 sup 5 sup 2 Cf with shape selection technique at various angles and distances. Also, the CR-39 track detectors with the sup 2 sup 5 sup 2 Cf source were exposed to high gamma-intensity of a sup 6 sup 0 Co irradiation facility in the range 0.1 to 4.5 kGy, similar to the exposures inside spent fuel assemblies. Using the two functions the lower limit of burnup could be determined by the method.

  19. Angular dependence of secondary ion emission from silicon bombarded with inert gas ions

    International Nuclear Information System (INIS)

    Wittmaack, K.

    1984-01-01

    The emission of positive and negative, atomic and molecular secondary ions sputtered from silicon has been studied under ultrahigh vacuum conditions. The sample was bombarded with 2-12 keV Ar + and Xe + ions at angles of incidence between 0 0 and 60 0 to the surface normal. The angular dependence of the secondary ion intensity as well as the energy spectra of Si + and Si - were found to differ significantly. The effect is attributed mostly do differences in the rate of neutralization. The stability of molecular ions appears to be independent of the charge state. Supporting evidence is provided for the idea that multiply charged secondary ions are due to Auger de-excitation of sputtered atoms in vacuum. (orig.)

  20. On the angular dependence and scattering model of polar mesospheric summer echoes at VHF

    Science.gov (United States)

    Sommer, Svenja; Stober, Gunter; Chau, Jorge L.

    2016-01-01

    We present measurements of the angular dependence of polar mesospheric summer echoes (PMSE) with the Middle Atmosphere Alomar Radar System in Northern Norway (69.30° N, 16.04° E). Our results are based on multireceiver and multibeam observations using beam pointing directions with off-zenith angles up to 25° as well as on spatial correlation analysis (SCA) from vertical beam observations. We consider a beam filling effect at the upper and lower boundaries of PMSE in tilted beams, which determines the effective mean angle of arrival. Comparing the average power of the vertical beam to the oblique beams suggests that PMSE are mainly not as aspect sensitive as in contrast to previous studies. However, from SCA, times of enhanced correlation are found, indicating aspect sensitivity or a localized scattering mechanism. Our results suggest that PMSE consist of nonhomogeneous isotropic scattering and previously reported aspect sensitivity values might have been influenced by the inhomogeneous nature of PMSE.

  1. Angular dependence of coercivity derived from alignment dependence of coercivity in Nd-Fe-B sintered magnets

    Directory of Open Access Journals (Sweden)

    Yutaka Matsuura

    2018-01-01

    Full Text Available Experimental results of the alignment dependence of the coercivity in Nd-Fe-B sintered magnets showed that the angle of magnetization reversal for anisotropically aligned magnets was bigger than that obtained from the theoretical results calculated using the postulation that every grain independently reverses its magnetization direction following the 1/cos θ law. The angles of reversed magnetization (θ1 for Nd13.48Co0.55B5.76Febal. with alignment α=0.95 and for Nd12.75Dy0.84B5.81Co0.55Febal. with α=0.96 were 30° and 36°, respectively, which were very similar to that of an ideal magnet with a Gaussian distribution (σ=31° and 44°, respectively of the grain alignment. In this model, we postulated that every grain independently reversed according to the 1/cos θ law. The calculation results for the angular dependence of the coercivity using the values θ1=ω1(0°=30°, σ=31° and θ1=ω1(0°=36°, σ=44° could qualitatively and convincingly explain the observed angular dependence of the coercivity of Nd14.2B6.2Co1.0Febal. and Nd14.2Dy0.3B6.2Co1.0Febal.. It is speculated that the magnetic domain wall is pinned at grains tilted away from the easy magnetization direction, and when the magnetic domain wall de-pins from the tilted grains, the magnetic domain wall jumps through several grains. We suggest that the coercive force of the aligned magnet behaves like a low-aligned magnet owing to the magnetization reversal of the crust of the grains induced by the pinning and subsequent jumping of the magnetic domain wall.

  2. Angular dependence of coercivity derived from alignment dependence of coercivity in Nd-Fe-B sintered magnets

    Science.gov (United States)

    Matsuura, Yutaka; Nakamura, Tetsuya; Sumitani, Kazushi; Kajiwara, Kentaro; Tamura, Ryuji; Osamura, Kozo

    2018-01-01

    Experimental results of the alignment dependence of the coercivity in Nd-Fe-B sintered magnets showed that the angle of magnetization reversal for anisotropically aligned magnets was bigger than that obtained from the theoretical results calculated using the postulation that every grain independently reverses its magnetization direction following the 1/cos θ law. The angles of reversed magnetization (θ1) for Nd13.48Co0.55B5.76Febal. with alignment α=0.95 and for Nd12.75Dy0.84B5.81Co0.55Febal. with α=0.96 were 30° and 36°, respectively, which were very similar to that of an ideal magnet with a Gaussian distribution (σ=31° and 44°, respectively) of the grain alignment. In this model, we postulated that every grain independently reversed according to the 1/cos θ law. The calculation results for the angular dependence of the coercivity using the values θ1=ω1(0°)=30°, σ=31° and θ1=ω1(0°)=36°, σ=44° could qualitatively and convincingly explain the observed angular dependence of the coercivity of Nd14.2B6.2Co1.0Febal. and Nd14.2Dy0.3B6.2Co1.0Febal.. It is speculated that the magnetic domain wall is pinned at grains tilted away from the easy magnetization direction, and when the magnetic domain wall de-pins from the tilted grains, the magnetic domain wall jumps through several grains. We suggest that the coercive force of the aligned magnet behaves like a low-aligned magnet owing to the magnetization reversal of the crust of the grains induced by the pinning and subsequent jumping of the magnetic domain wall.

  3. Large linear magnetoresistance and magnetothermopower in layered SrZnSb$_2$

    OpenAIRE

    Wang, Kefeng; Petrovic, C.

    2016-01-01

    We report the large linear magnetoresistance ($\\sim 300\\%$ in 9 T field at 2 K) and magnetothermopower in layered SrZnSb$_2$ crystal with quasi-two-dimensional Sb layers. A crossover from the semiclassical parabolic field dependent magnetoresistance to linear field dependent magnetoresistance with increasing magnetic field is observed. The magnetoresistance behavior can be described very well by combining the semiclassical cyclotron contribution and the quantum limit magnetoresistance. Magnet...

  4. Angular dependence on the records of dose in radiochromic films strips

    Energy Technology Data Exchange (ETDEWEB)

    Costa, K. C.; Prata M, A. [Centro Federal de Educacao Tecnologica de Minas Gerais, Centro de Engenharia Biomedica, Av. Amazonas 5253, 30421-169 Nova Suica, Belo Horizonte, Minas Gerais (Brazil); Alonso, T. C. [Centro de Desenvolvimento da Tecnologia Nuclear - CNEN, Av. Pte. Antonio Carlos 6627, 31270-901 Pampulha, Belo Horizonte, Minas Gerais (Brazil); Campo de O, P. M., E-mail: kamilacosta1995@gmail.com [Universidade Federal de Minas Gerais, Departamento de Anatomia e Imagen, Av. Prof. Alfredo Balena 190, 30130-100 Belo Horizonte, Minas Gerais (Brazil)

    2016-10-15

    Radiological images have relevant information both the diagnostic results as to treatment decisions. Then, the diagnostic quality of image that allows a proper analysis should be achieved with the lowest possible deposition of dose in a patient. CT scans produce sectional images that allow the observation of internal structures of the human body without overlap. As in conventional radiology, the contrast which allows obtaining CT images results from the difference in X-ray beam absorption, according to the characteristics of each tissue. The increased of the beam absorption by a tissue means that it appears brighter in the image. In CT scanners, X-ray tube rotates around the patient, and this rotation results in a cross-sectional image of the body. From a sectional image series is possible to obtain a 3-dimensional image that can be viewed from different angles. Among the methods of dose measurement is the use of radiochromic films, which record the energy deposition by darkening its emulsion. The radiochromic films show little sensitivity to visible light and respond better to exposure to ionizing radiation. In this work, strips of the radiochromic film GAFCHROMIC XR-QA2 were irradiated at different angular positions for radiation quality RQT8, defining a beam of X-rays generated from a voltage of 100 kV. The response of radiochromic films depending on the doses was assessed through digital images obtained by H P Scan jet G-4050 scanner. Digital images were analyzed using Image-J software, which allowed obtaining numerical values corresponding to the intensity of darkening for each film. The aim of this study is to evaluate the dose deposition in radiochromic film according to the angular variation in order how is affected the record. So, to examine the use of film strips to record doses in Computed Tomography tests. (Author)

  5. A strong angular dependence of magnetic properties of magnetosome chains: Implications for rock magnetism and paleomagnetism

    Science.gov (United States)

    Li, Jinhua; Ge, Kunpeng; Pan, Yongxin; Williams, Wyn; Liu, Qingsong; Qin, Huafeng

    2013-10-01

    Single-domain magnetite particles produced by magnetotactic bacteria (magnetosomes) and aligned in chains are of great interest in the biosciences and geosciences. Here, we investigated angular variation of magnetic properties of aligned Magnetospirillum magneticum AMB-1 cells, each of which contains one single fragmental chain of magnetosomes. With measurements at increasing angles from the chain direction, we observed that (i) the hysteresis loop gradually changes from nearly rectangular to a ramp-like shape (e.g., Bc and remanence decrease), (ii) the acquisition and demagnetization curves of IRM shift toward higher fields (e.g., Bcr increases), and (iii) the FORC diagram shifts toward higher coercivity fields (e.g., Bc,FORC increases). For low-temperature results, compared to unoriented samples, the samples containing aligned chains have a much lower remanence loss of field-cooled (δFC) and zero-field-cooled (δZFC) remanence upon warming through the Verwey transition, higher δ-ratio (δ = δFC/δZFC) for the measurement parallel to the chain direction, and lower δ-ratio, larger δFC and δZFC values for the perpendicular measurement. Micromagnetic simulations confirm the experimental observations and reveal that the magnetization reversal of magnetosome chain appears to be noncoherent at low angles and coherent at high angles. The simulations also demonstrate that the angular dependence of magnetic properties is related to the dispersion degree of individual chains, indicating that effects of anisotropy need to be accounted for when using rock magnetism to identify magnetosomes or magnetofossils once they have been preserved in aligned chains. Additionally, this study experimentally demonstrates an empirical correspondence of the parameter Bc,FORC to Bcr rather than Bc, at least for magnetite chains with strong shape anisotropy. This suggests FORC analysis is a good discriminant of magnetofossils in sediments and rocks.

  6. Measurement of energy dependence of fission fragment angular anisotropy for resonance neutron induced fission of 235U aligned target

    International Nuclear Information System (INIS)

    Bogdzel, A.A.; Furman, W.I.

    1996-01-01

    The results of the experiment on measuring the energy dependence of fission fragment angular anisotropy in resonance neutron induced fission of 235 U aligned target in energy region up to 42 eV are presented. The agreement with the data of Pattenden and Postma in resonances is good enough, while the theoretical curve, calculated using the R-matrix multilevel two fission channel approach, does not seem to describe the energy dependence of fission fragment angular anisotropy property. The necessity of taking into account the interference between levels with different spins is discussed. 11 refs., 2 figs

  7. Angle-dependent magnetoresistance oscillations and Fermi surface reordering at high magnetic fields in {alpha}-(ET){sub 2}KHg(SCN){sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Caulfield, J. [Clarendon Lab. (United Kingdom); Blundell, S.J. [Clarendon Lab. (United Kingdom); Singleton, J. [Clarendon Lab. (United Kingdom); House, A. [Clarendon Lab. (United Kingdom); Du Croo de Jongh, M.S.L. [Clarendon Lab. (United Kingdom); Hendriks, P.T.J. [High Field Magnet Lab. and Research Inst. for Materials, Univ. of Nijmegen (Netherlands); Perenboom, J.A.A.J. [High Field Magnet Lab. and Research Inst. for Materials, Univ. of Nijmegen (Netherlands); Hayes, W. [Clarendon Lab. (United Kingdom); Kurmoo, M. [Clarendon Lab. (United Kingdom)]|[Royal Institution, London (United Kingdom); Day, P. [Royal Institution, London (United Kingdom)

    1995-03-15

    Angle dependent magnetoresistance oscillations (AMRO) have been studied in the charge transfer salt {alpha}-(ET){sub 2}KHg(SCN){sub 4} for magnetic fields in the range 0 - 30 T. This salt exhibits the onset of antiferromagnetic order at temperatures T{sub N} {approx}8-10 K and the presence below this temperature of a region of sharp negative magnetoresistance at a field around 22 T known as the ``kink``. AMRO have been measured in this salt for a wide range of applied fields since the period, amplitude, and nature of the oscillations can be used to directly infer the character of the Fermi surface (FS) as a function of field. The data indicate that a profound change in the band structure occurs at this kink transition; the high field phase is characterised by quasi-2D oscillations from a closed cylindrical FS which is elongated in the c direction; the low field phase appears to be a spin density wave groundstate, with a FS consisting of a sheet (which is quasi-1D in character and tilted at an angle of {approx}21 to the b{sup *}c plane) and small closed 2D pockets. It is suggested that the breakdown orbits between the pockets and the 1D sheets are able to account for the various Shubnikov-de Haas frequencies observed below the kink. (orig.)

  8. Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

    Science.gov (United States)

    Sun, Mingling; Kubota, Takahide; Takahashi, Shigeki; Kawato, Yoshiaki; Sonobe, Yoshiaki; Takanashi, Koki

    2018-05-01

    Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.

  9. Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction.

    Science.gov (United States)

    Vasili, Hari Babu; Gamino, Matheus; Gàzquez, Jaume; Sánchez, Florencio; Valvidares, Manuel; Gargiani, Pierluigi; Pellegrin, Eric; Fontcuberta, Josep

    2018-04-11

    Pure spin currents have potential for use in energy-friendly spintronics. They can be generated by a flow of charge along a nonmagnetic metal with large spin-orbit coupling. This produces a spin accumulation at the surfaces, controllable by the magnetization of an adjacent ferromagnetic layer. Paramagnetic metals typically used are close to ferromagnetic instability and thus magnetic proximity effects can contribute to the observed angular-dependent magnetoresistance (ADMR). As interface phenomena govern the spin conductance across the metal/ferromagnetic-insulator heterostructures, unraveling these distinct contributions is pivotal for a full understanding of spin current conductance. Here, we report X-ray absorption and magnetic circular dichroism (XMCD) at Pt M and (Co, Fe) L absorption edges and atomically resolved energy electron loss spectroscopy (EELS) data of Pt/CoFe 2 O 4 bilayers, where CoFe 2 O 4 layers have been capped by Pt grown at different temperatures. It was found that the ADMR differs dramatically, dominated either by spin Hall magnetoresistance (SMR) associated with the spin Hall effect or by anisotropic magnetoresistance. The XMCD and EELS data indicate that the Pt layer grown at room temperature does not display any magnetic moment, whereas when grown at a higher temperature, it becomes magnetic due to interfacial Pt-(Co, Fe) alloying. These results enable differentiation of spin accumulation from interfacial chemical reconstructions and tailoring of the angular-dependent magnetoresistance.

  10. Polarized angular dependent light scattering from plasmonic nanoparticles: Modeling, measurements, and biomedical applications

    Science.gov (United States)

    Fu, Kun

    Several significant applications have been realized for light scattering in biomedical imaging. In order to improve imaging results with light scattering-based techniques, a variety of nanoparticles have been investigated as contrast agents, including gold nanoshells. As a method for studying the optical properties of plasmonic gold nanoparticles used as contrast agents for molecular imaging, we developed an automated goniometer instrumentation system. This system, which allows us to specifically study polarized angular-dependent light scattering of plasmonic nanoparticles, allowed us to perform a series of theoretical and experimental step-wise studies. The basic optical properties of the following gold nanoparticles were progressively investigated: (1) bare nanoshells at multipolar plasmonic resonances, (2) nanoshells with PEG modifications, (3) surface-textured nanoshells and (4) immunotargeted nanoshells (nanoshell-antibody bioconjugates) for cancer imaging. Based on the results from these studies, a new technique was developed to quantitatively measure the number of immunotargeted nanoparticles that bind to HER2-positive SKBR3 human breast cancer cells. Preliminary studies of determining the minimal incubation time of immunotargeted nanoshells with SKBR3 cells were also carried out to evaluate the potential clinical application of using gold nanoshells intraoperatively. We, therefore, anticipate that our findings will provide the theoretical groundwork required for further studies aimed at optimizing the application of plasmonic nanoparticles in scattering-based optical imaging techniques.

  11. A comparison of the angular dependence of effective dose and effective dose equivalent

    International Nuclear Information System (INIS)

    Sitek, M.A.; Gierga, D.P.; Xu, X.G.

    1996-01-01

    In ICRP (International Commission on Radiological Protection) Publication 60, the set of critical organs and their weighing factors were changed, defining the quantity effective dose, E. This quantity replaced the effective dose equivalent, H E , as defined by ICRP 26. Most notably, the esophagus was added to the list of critical organs. The Monte Carlo neutron/photon transport code MCNP was used to determine the effective dose to sex-specific anthropomorphic phantoms. The phantoms, developed in previous research, were modified to include the esophagus. Monte Carlo simulations were performed for monoenergetic photon beams of energies 0.08 MeV, 0.3 MeV, and 1.0 MeV for various azimuthal and polar angles. Separate organ equivalent doses were determined for male and female phantoms. The resulting organ equivalent doses were calculated from arithmetic mean averages. The angular dependence of effective dose was compared with that of effective dose equivalent reported in previous research. The differences between the two definitions and possible implications to regulatory agencies were summarized

  12. Angular-dependent light scattering from cancer cells in different phases of the cell cycle.

    Science.gov (United States)

    Lin, Xiaogang; Wan, Nan; Weng, Lingdong; Zhou, Yong

    2017-10-10

    Cancer cells in different phases of the cell cycle result in significant differences in light scattering properties. In order to harvest cancer cells in particular phases of the cell cycle, we cultured cancer cells through the process of synchronization. Flow cytometric analysis was applied to check the results of cell synchronization and prepare for light scattering measurements. Angular-dependent light scattering measurements of cancer cells arrested in the G1, S, and G2 phases have been performed. Based on integral calculations for scattering intensities from 5° to 10° and from 110° to 150°, conclusions have been reached. Clearly, the sizes of the cancer cells in different phases of the cell cycle dominated the forward scatter. Accompanying the increase of cell size with the progression of the cell cycle, the forward scattering intensity also increased. Meanwhile, the DNA content of cancer cells in every phase of the cell cycle is responsible for light scattering at large scatter angles. The higher the DNA content of cancer cells was, the greater the positive effect on the high-scattering intensity. As expected, understanding the relationships between the light scattering from cancer cells and cell cycles will aid in the development of cancer diagnoses. Also, it may assist in the guidance of antineoplastic drugs clinically.

  13. On a relationship between the geometry of cones on sputtered surfaces and the angular dependence of sputtered yields

    International Nuclear Information System (INIS)

    Chadderton, L.T.

    1977-01-01

    It is widely believed that the phenomenon responsible for the familiar peak in the angular dependence of sputtered yields also gives rise to characteristic semiangles α of conical protruberances on sputtered surfaces. It is shown that α corresponds to the process giving rise to the minimum rather than the maximum. No accurate measurements of the minimum have yet been made. (Auth.)

  14. Angular and spectral sensitivity of fly photoreceptors. III. Dependence on the pupil mechanism in the blowfly Calliphora

    NARCIS (Netherlands)

    Stavenga, DG

    A wave optics model for the facet lens-rhabdomere system of fly eyes is used to analyze the dependence of the angular and spectral sensitivity of R1-6 photoreceptors on the pupil mechanism. This assembly of light-absorbing pigment granules in the soma interacts with the waveguide modes propagating

  15. Correction of the angular dependence of satellite retrieved LST at global scale using parametric models

    Science.gov (United States)

    Ermida, S. L.; Trigo, I. F.; DaCamara, C.; Ghent, D.

    2017-12-01

    Land surface temperature (LST) values retrieved from satellite measurements in the thermal infrared (TIR) may be strongly affected by spatial anisotropy. This effect introduces significant discrepancies among LST estimations from different sensors, overlapping in space and time, that are not related to uncertainties in the methodologies or input data used. Furthermore, these directional effects deviate LST products from an ideally defined LST, which should represent to the ensemble of directional radiometric temperature of all surface elements within the FOV. Angular effects on LST are here conveniently estimated by means of a parametric model of the surface thermal emission, which describes the angular dependence of LST as a function of viewing and illumination geometry. Two models are consistently analyzed to evaluate their performance of and to assess their respective potential to correct directional effects on LST for a wide range of surface conditions, in terms of tree coverage, vegetation density, surface emissivity. We also propose an optimization of the correction of directional effects through a synergistic use of both models. The models are calibrated using LST data as provided by two sensors: MODIS on-board NASA's TERRA and AQUA; and SEVIRI on-board EUMETSAT's MSG. As shown in our previous feasibility studies the sampling of illumination and view angles has a high impact on the model parameters. This impact may be mitigated when the sampling size is increased by aggregating pixels with similar surface conditions. Here we propose a methodology where land surface is stratified by means of a cluster analysis using information on land cover type, fraction of vegetation cover and topography. The models are then adjusted to LST data corresponding to each cluster. It is shown that the quality of the cluster based models is very close to the pixel based ones. Furthermore, the reduced number of parameters allows improving the model trough the incorporation of a

  16. Parameter dependence of the decoherence of orbital angular momentum entanglement in atmospheric turbulence

    CSIR Research Space (South Africa)

    Hamadou Ibrahim, A

    2011-08-01

    Full Text Available he orbital angular momentum (OAM) state of light can potentially be used to implement higher dimensional entangled systems for quantum communication. Unfortunately, optical fibers in use today support only modes with zero OAM values. Free...

  17. Magnetoresistance of untwinned YBa(2)Cu(3)O(y) single crystals in a wide range of doping: anomalous hole-doping dependence of the coherence length.

    Science.gov (United States)

    Ando, Yoichi; Segawa, Kouji

    2002-04-22

    Magnetoresistance (MR) in the a-axis resistivity of untwinned YBa(2)Cu(3)O(y) single crystals is measured for a wide range of doping ( y = 6.45-7.0). The y dependence of the in-plane coherence length xi(ab) estimated from the fluctuation magnetoconductance indicates that the superconductivity is anomalously weakened in the 60-K phase; this observation, together with the Hall coefficient and the a-axis thermopower data which suggest the hole doping to be 12% for y approximately equal to 6.65, gives evidence that the origin of the 60-K plateau is the 1/8 anomaly. At high temperatures, the normal-state MR data show signatures of the Zeeman effect on the pseudogap in underdoped samples.

  18. Dependency of Tunneling-Magnetoresistance Ratio on Nanoscale Spacer Thickness and Material for Double MgO Based Perpendicular-Magnetic-Tunneling-Junction

    Science.gov (United States)

    Lee, Du-Yeong; Hong, Song-Hwa; Lee, Seung-Eun; Park, Jea-Gun

    2016-12-01

    It was found that in double MgO based perpendicular magnetic tunneling junction spin-valves ex-situ annealed at 400 °C, the tunneling magnetoresistance ratio was extremely sensitive to the material and thickness of the nanoscale spacer: it peaked at a specific thickness (0.40~0.53 nm), and the TMR ratio for W spacers (~134%) was higher than that for Ta spacers (~98%). This dependency on the spacer material and thickness was associated with the (100) body-centered-cubic crystallinity of the MgO layers: the strain enhanced diffusion length in the MgO layers of W atoms (~1.40 nm) was much shorter than that of Ta atoms (~2.85 nm) and the shorter diffusion length led to the MgO layers having better (100) body-centered-cubic crystallinity.

  19. Energy dependence of angular momentum transfer in post-collision interaction. Classical view

    Science.gov (United States)

    Gerchikov, L.; Sheinerman, S.

    2018-03-01

    A classical approach to the description of angular momentum transfer between the Auger electron and photoelectron in post-collision interaction is worked out. The results of the classical approach coincide with the quantum mechanical ones at the photoionization threshold. Besides, the approach developed provides a description of angular momentum transfer beyond the photoionization threshold. In particular, it is suitable in the energy region of comparable velocities of two emitted electrons.

  20. Magnetoresistances in Ni80Fe20-ITO granular film

    International Nuclear Information System (INIS)

    Gao Chunhong; Chen Ke; Yang Yanxia; Xiong Yuanqiang; Chen Peng

    2012-01-01

    Highlights: ► Magnetoresistance (MR) in Ni 80 Fe 20 -ITO granular film are investigated. ► MR is positive at high temperature, and is negative at low temperature. ► MR results from the competition among three mechanisms. - Abstract: The magnetic properties, electrical properties and magnetoresistance are investigated in Ni 80 Fe 20 -ITO granular film with various volume fractions V NF of Ni 80 Fe 20 . The room temperature magnetization hysteresis of sample with V NF = 25% shows superparamagnetic behavior. Current-voltage curve of sample with V NF = 25% at 175 K shows typical tunneling-type behavior. The magnetoresistances of samples with low V NF are positive at high temperature, and are negative at low temperature. The temperature-dependent magnetoresistances result from the competition among ordinary magnetoresistances, the granular-typed tunneling magnetoresistance and the spin-mixing induced magnetoresistances.

  1. Dependência energética e angular de materiais termoluminescentes para monitoração beta

    OpenAIRE

    CECATTI, SONIA G.P.; CALDAS, LINDA V.E.

    2014-01-01

    As dependências energética e angular de diferentes materiais termoluminescentes foram estudadas com o objetivo de verificar que tipo de detector seria o mais adequado para a monitoração de trabalhadores envolvidos com a radiação beta. Três tipos de pastilhas de CaSO4:Dy + teflon foram estudados. A dependência energética foi verificada usando-se fontes padrões de radiação beta (147Pm, 204Tl e 90Sr+90Y). A dependência angular foi verificada irradiando-se as amostras com feixes de radiação beta,...

  2. Fe concentration dependence of tunneling magnetoresistance in magnetic tunnel junctions using group-IV ferromagnetic semiconductor GeFe

    Directory of Open Access Journals (Sweden)

    Kosuke Takiguchi

    2017-10-01

    Full Text Available Group-IV-based ferromagnetic semiconductor Ge1−xFex (GeFe is one of the most promising materials for spin injection/detection in Si and Ge. In this paper, we demonstrate a systematic study of tunneling magnetoresistance (TMR in magnetic tunnel junctions (MTJs composed of Fe/MgO/Ge1−xFex with various Fe concentrations (x = 0.065, 0.105, 0.140, and 0.175. With increasing x, the TMR ratio increases up to 1.5% when x≤ 0.105, and it decreases when x> 0.105. This is the first observation of the TMR ratio over 1% in MTJs containing a group-IV ferromagnetic semiconductor. With increasing x, while the Curie temperature of GeFe increases, the MgO surface becomes rougher, which is thought to be the cause of the upper limit of the TMR ratio. The quality of the MgO layer on GeFe is an important factor for further improvement of TMR in Fe/MgO/GeFe MTJs.

  3. Secondary-electron-emission spectroscopy of tungsten: Angular dependence and phenomenology

    International Nuclear Information System (INIS)

    Willis, R.F.; Christensen, N.E.

    1978-01-01

    Angle-resolved energy-distribution measurements of secondary-electron emission (SEE) from metals reveal spectral fine structure that relates directly to the density distribution of the one-electron states throughout E-K space located above the vacuum level E/sub v/. The angular dependence of the SEE spectra from (100), (110), and (111) tungsten surfaces has been studied as a function of polar angle 0 0 0 along azimuthal directions phi such that the energy- and angle-resolved SEE current j/sub SEE/ (E, Ω) effectively scans states throughout the 1/48th irreducible body-centered-cubic zone. Calculations have been carried out in both ''reduced'' and ''extended'' K space in order to assess the relative contribution of elastic umklapp scattering to the density distribution of contributing states profiles. The results indicate that the overall secondary-electron yield may be represented as the sum of basically two contributions J/sup total//sub SEE/ = ∫/sup π/ 0 dΩ ∫/sup E//sup max/ 0 j/sub SEE/ (E,Ω)2dE = J/sup bulk//sub SEE/ + J/sup surface/ /sub SEE/. The bulk contribution represents emission due to Bloch waves propagating out of states in the semi-infinite crystal; the surface contribution represents that part of the current due to evanescent waves at the metal-vacuum interface. Transmission-induced spectral features are observed (transmission resonances), which are not related to the density-of-states fine structure, but are due to a quantum-mechanical enhancement in the escape probability arising from wave-function matching at the emitter-vacuum interface. Bulk and surface band-structure effects are concurrently manifest in the SEE spectra via the wave-matching conditions imposed at the solid-vacuum interface. Results are discussed within the general conceptual framework provided by ''the (time-reversed) incoming final-state wave-function'' approach to electron emission phenomenology of metal surfaces

  4. Evaluation of linearity of response and angular dependence of an ionization chamber for dosimetry in computed tomography

    Energy Technology Data Exchange (ETDEWEB)

    Perini, Ana P.; Neves, Lucio P.; Xavier, Marcos; Caldas, Linda V.E., E-mail: mxavier@ipen.b, E-mail: lcaldas@ipen.b [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Khoury, Helen J., E-mail: khoury@ufpe.b [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil). Dept. de Energia Nuclear

    2011-07-01

    In this paper a pencil-type ionization chamber designed and manufactured at Instituto de Pesquisas Energeticas e Nucleares was evaluated for dosimetric applications in computed tomography beams. To evaluate the performance of this chamber two tests were undertaken: linearity of response and angular dependence. The results obtained in these tests showed good results, within the international recommendations. Moreover, this homemade ionization chamber is easy to manufacture, of low cost and efficient. (author)

  5. Giant exchange bias and its angular dependence in Co/CoO core-shell nanowire assemblies

    Energy Technology Data Exchange (ETDEWEB)

    Gandha, Kinjal; Chaudhary, Rakesh P.; Mohapatra, Jeotikanta; Koymen, Ali R.; Liu, J. Ping, E-mail: pliu@uta.edu

    2017-07-12

    The exchange-bias field (H{sub EB}) and its angular dependence are systematically investigated in Co/CoO core-shell nanowire assemblies (∼15 nm in diameter and ∼200 nm in length) consisting of single-crystalline Co core and polycrystalline CoO shell. Giant exchange-bias field (H{sub EB}) up to 2.4 kOe is observed below a blocking temperature (T{sub EB} ∼150 K) in the aligned Co/CoO nanowire assemblies. It is also found that there is an angular dependence between the H{sub EB} and the applied magnetization direction. The H{sub EB} showed a peak at 30° between the applied field and the nanowire aligned direction, which may be attributed to the noncollinear spin orientations at the interface between the ferromagnetic core and the antiferromagnetic shell. This behavior is quantitatively supported by an analytical calculation based on Stoner–Wohlfarth model. This study underlines the importance of the competing magnetic anisotropies at the interface of Co/CoO core-shell nanowires. - Highlights: • Giant exchange bias is observed in oriented Co/CoO core-shell nanowire assemblies. • Study of angular and temperature dependence of the exchange bias effect. • Competing magnetic anisotropies at the interface of Co/CoO core-shell nanowires. • Effect of misaligned spins in FM/AFM interface on angular dependence of exchange bias. • We explain the analytical model that accounts for experimental results.

  6. Colossal magnetoresistance manganites

    Indian Academy of Sciences (India)

    Keywords. Manganites; colossal magnetoresistance; strongly correlated electron systems; metal-insulator transitions and other electronic transitions; Jahn-Teller polarons and electron-phonon interaction.

  7. Positron annihilation in pivalic acid. Temperature dependence of angular correlation curves

    DEFF Research Database (Denmark)

    Jain, P. C.; Eldrup, Morten Mostgaard; Pedersen, Niels Jørgen

    1986-01-01

    Positron annihilation angular correlation curves have been measured as a function of temperature for trimethylacetic (pivalic) acid in both the brittle and plastic phases. A simple fitting of the data to a sum of three gaussians shows the presence of a narrow component due to para-positronium (p......-Ps) annihilation. In the brittle phase the intensity of the narrow component is inconsistent with previous positron lifetime data. A more detailed analysis, requiring consistency with the lifetime data, results in the determination of the shapes of the angular correlation components for free positron-, pick......-off-, and p-Ps intrinsic annihilation. The p-Ps component has a width (fwhm) of 3.75 mrad in the brittle phase, probably due to Ps self-trapping or trapping in defects smaller than molecular vacancies. In the plastic phase the width (fwhm) is 3.25 mrad which is ascribed to Ps localization in vacancies...

  8. Positron annihilation in pivalic acid. Temperature dependence of angular correlation curves

    DEFF Research Database (Denmark)

    Jain, P. C.; Eldrup, Morten Mostgaard; Pedersen, Niels Jørgen

    1986-01-01

    -off-, and p-Ps intrinsic annihilation. The p-Ps component has a width (fwhm) of 3.75 mrad in the brittle phase, probably due to Ps self-trapping or trapping in defects smaller than molecular vacancies. In the plastic phase the width (fwhm) is 3.25 mrad which is ascribed to Ps localization in vacancies......Positron annihilation angular correlation curves have been measured as a function of temperature for trimethylacetic (pivalic) acid in both the brittle and plastic phases. A simple fitting of the data to a sum of three gaussians shows the presence of a narrow component due to para-positronium (p...

  9. Magnetoresistance in RCo2 spin-fluctuation systems

    International Nuclear Information System (INIS)

    Gratz, E.; Nowotny, H.; Enser, J.; Bauer, E.; Hense, K.

    2004-01-01

    The effect of the spin fluctuations on the field and temperature dependence of the magnetoresistance in ScCo 2 and LuCo 2 was studied. The experimental data where explained assuming two competing mechanisms determining the magnetoresistance of these substances. One is the 'normal magnetoresistance' caused by the influence of the Lorentz force on conduction electron trajectories. The other is due to the suppression of the spin fluctuations caused by an external magnetic field. This interplay give rise to a pronounced drop of the magnetoresistance towards the lower temperature range

  10. Angular dependence of dissociative electron attachment topolyatomic molecules: application to the 2B1 metastable state of the H2Oand H2S anions

    Energy Technology Data Exchange (ETDEWEB)

    Haxton, Daniel J.; McCurdy, C. William; Rescigno, Thomas N.

    2006-01-12

    The angular dependence of dissociative electron attachment (DEA) to polyatomic targets is formulated in the local complex potential model, under the assumption that the axial recoil approximation describes the dissociation dynamics. An additional approximation, which is found to be valid in the case of H2O but not in the case of H2S, makes it possible to describe the angular dependence of DEA solely from an analysis of the fixed-nuclei entrance amplitude, without carrying out nuclear dynamics calculations. For H2S, the final-vibrational-state-specific angular dependence of DEA is obtained by incorporating the variation of the angular dependence of the entrance amplitude with nuclear geometry into the nuclear dynamics. Scattering calculations using the complex Kohn method and, for H2S, full quantum calculations of the nuclear dynamics using the Multi-Configuration Time-Dependent Hartree method, are performed.

  11. Giant magnetoresistance through a single molecule.

    Science.gov (United States)

    Schmaus, Stefan; Bagrets, Alexei; Nahas, Yasmine; Yamada, Toyo K; Bork, Annika; Bowen, Martin; Beaurepaire, Eric; Evers, Ferdinand; Wulfhekel, Wulf

    2011-03-01

    Magnetoresistance is a change in the resistance of a material system caused by an applied magnetic field. Giant magnetoresistance occurs in structures containing ferromagnetic contacts separated by a metallic non-magnetic spacer, and is now the basis of read heads for hard drives and for new forms of random access memory. Using an insulator (for example, a molecular thin film) rather than a metal as the spacer gives rise to tunnelling magnetoresistance, which typically produces a larger change in resistance for a given magnetic field strength, but also yields higher resistances, which are a disadvantage for real device operation. Here, we demonstrate giant magnetoresistance across a single, non-magnetic hydrogen phthalocyanine molecule contacted by the ferromagnetic tip of a scanning tunnelling microscope. We measure the magnetoresistance to be 60% and the conductance to be 0.26G(0), where G(0) is the quantum of conductance. Theoretical analysis identifies spin-dependent hybridization of molecular and electrode orbitals as the cause of the large magnetoresistance.

  12. Pulsed laser deposition of lysozyme: the dependence on shot numbers and the angular distribution

    Science.gov (United States)

    Constantinescu, C.; Matei, A.; Schou, J.; Canulescu, S.; Dinescu, M.

    2013-12-01

    The ejection of molecules from a pressed solid target of lysozyme induced by laser ablation in the UV-regime at a wavelength of 355 nm was investigated. The ablation studies were carried out in vacuum at a laser fluence of 2 J/cm2 for which a significant fraction of proteins remains intact. This was verified by matrix-assisted laser desorption ionization (MALDI) spectrometry of thin films deposited on silicon substrates. The deposition rate of lysozyme was found to decrease with the number of shots and was correlated with increasing thermal damage of the lysozyme. This was monitored by measurements of the optical reflectivity of dry lysozyme. The angular distribution of the mass deposition can be fitted well by Anisimov's hydrodynamic model. The total deposited yield over the entire hemisphere from direct laser ablation of lysozyme was estimated from this model and found to be three orders of magnitude less than the ablated mass.

  13. Modelling Angular Dependencies in Land Surface Temperatures From the SEVIRI Instrument onboard the Geostationary Meteosat Second Generation Satellites

    DEFF Research Database (Denmark)

    Rasmussen, Mads Olander; Pinheiro, AC; Proud, Simon Richard

    2010-01-01

    Satellite-based estimates of land surface temperature (LST) are widely applied as an input to models. A model output is often very sensitive to error in the input data, and high-quality inputs are therefore essential. One of the main sources of errors in LST estimates is the dependence on vegetat......Satellite-based estimates of land surface temperature (LST) are widely applied as an input to models. A model output is often very sensitive to error in the input data, and high-quality inputs are therefore essential. One of the main sources of errors in LST estimates is the dependence...... on vegetation structure and viewing and illumination geometry. Despite this, these effects are not considered in current operational LST products from neither polar-orbiting nor geostationary satellites. In this paper, we simulate the angular dependence that can be expected when estimating LST with the viewing...

  14. Large magnetoresistance in non-magnetic silver chalcogenides and new class of magnetoresistive compounds

    Science.gov (United States)

    Saboungi, Marie-Louis; Price, David C. L.; Rosenbaum, Thomas F.; Xu, Rong; Husmann, Anke

    2001-01-01

    The heavily-doped silver chalcogenides, Ag.sub.2+.delta. Se and Ag.sub.2+.delta. Te, show magnetoresistance effects on a scale comparable to the "colossal" magnetoresistance (CMR) compounds. Hall coefficient, magnetoconductivity, and hydrostatic pressure experiments establish that elements of narrow-gap semiconductor physics apply, but both the size of the effects at room temperature and the linear field dependence down to fields of a few Oersteds are surprising new features.

  15. About angular dependence of intensity of absent-minded radiation in approach of the strong dissipation of colliding ionic-sound waves

    International Nuclear Information System (INIS)

    Solikhov, D.K.

    2015-01-01

    Present article is devoted to angular dependence of intensity of absent-minded radiation in approach of the strong dissipation of colliding ionic-sound waves. The operation angular dependence of dimensionless of intensity of absent-minded radiation in two-dimensional field of localisation of a wave of a rating in approach of the strong dissipation of passers is ionic-sound waves is viewed. (author)

  16. Determination of the angular dependence of the detector matrix Matrix X-evolution of IBA; Determinacion de la dependencia angular del detector matricicial Matrix-X-evolution de IBA

    Energy Technology Data Exchange (ETDEWEB)

    Mateos, J. C.; Luis, F. J.; Sanchez, G.; Herrados, M.

    2011-07-01

    The objective of this work consists in determining the correction for the angular dependence of the detector-Evolution Matrix x matrix (IBA, Germany), when used in the multi cube dummy (IBA, Germany), verification of treatment VMAT IMRT, using the software OP'IMRT (IBA, Germany).

  17. Probing giant magnetoresistance with THz spectroscopy

    DEFF Research Database (Denmark)

    Jin, Zuanming; Tkach, Alexander; Casper, Frederick

    2014-01-01

    We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined. © 2014 OSA.......We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined. © 2014 OSA....

  18. Spin-flip induced magnetoresistance in positionally disordered organic solids.

    Science.gov (United States)

    Harmon, N J; Flatté, M E

    2012-05-04

    A model for magnetoresistance in positionally disordered organic materials is presented and solved using percolation theory. The model describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Faster spin-flip transitions open up "spin-blocked" pathways to become viable conduction channels and hence produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with previous measurements, including the sensitive dependence of the magnetic-field dependence of the magnetoresistance on the ratio of the carrier hopping time to the hyperfine-induced carrier spin precession time. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory.

  19. Temperature dependent evolution of the electronic and local atomic structure in the cubic colossal magnetoresistive manganite La1-xSrxMnO3

    Energy Technology Data Exchange (ETDEWEB)

    Arenholz, Elke; Mannella, N.; Booth, C.H.; Rosenhahn, A.; Sell, B.C.; Nambu, A.; Marchesini, S.; Mun, B. S.; Yang, S.-H.; Watanabe, M.; Ibrahim, K.; Arenholz, E.; Young, A.; Guo, J.; Tomioka, Y.; Fadley, C.S.

    2007-12-06

    We have studied the temperature-dependent evolution of the electronic and local atomic structure in the cubic colossal magnetoresistive manganite La{sub 1-x}Sr{sub x}MnO{sub 3} (x= 0.3-0.4) with core and valence level photoemission (PE), x-ray absorption spectroscopy (XAS), x-ray emission spectroscopy (XES), resonant inelastic x-ray scattering (RIXS), extended x-ray absorption fine structure (EXAFS) spectroscopy and magnetometry. As the temperature is varied across the Curie temperature T{sub c}, our PE experiments reveal a dramatic change of the electronic structure involving an increase in the Mn spin moment from {approx} 3 {micro}B to {approx} 4 {micro}B, and a modification of the local chemical environment of the other constituent atoms indicative of electron localization on the Mn atom. These effects are reversible and exhibit a slow-timescale {approx}200 K-wide hysteresis centered at T{sub c}. Based upon the probing depths accessed in our PE measurements, these effects seem to survive for at least 35-50 {angstrom} inward from the surface, while other consistent signatures for this modification of the electronic structure are revealed by more bulk sensitive spectroscopies like XAS and XES/RIXS. We interpret these effects as spectroscopic fingerprints for polaron formation, consistent with the presence of local Jahn-Teller distortions of the MnO{sub 6} octahedra around the Mn atom, as revealed by the EXAFS data. Magnetic susceptibility measurements in addition show typical signatures of ferro-magnetic clusters formation well above the Curie temperature.

  20. In situ measurements of angular-dependent light scattering by aerosols over the contiguous United States

    Science.gov (United States)

    Reed Espinosa, W.; Vanderlei Martins, J.; Remer, Lorraine A.; Puthukkudy, Anin; Orozco, Daniel; Dolgos, Gergely

    2018-03-01

    This work provides a synopsis of aerosol phase function (F11) and polarized phase function (F12) measurements made by the Polarized Imaging Nephelometer (PI-Neph) during the Studies of Emissions, Atmospheric Composition, Clouds and Climate Coupling by Regional Surveys (SEAC4RS) and the Deep Convection Clouds and Chemistry (DC3) field campaigns. In order to more easily explore this extensive dataset, an aerosol classification scheme is developed that identifies the different aerosol types measured during the deployments. This scheme makes use of ancillary data that include trace gases, chemical composition, aerodynamic particle size and geographic location, all independent of PI-Neph measurements. The PI-Neph measurements are then grouped according to their ancillary data classifications and the resulting scattering patterns are examined in detail. These results represent the first published airborne measurements of F11 and -F12/F11 for many common aerosol types. We then explore whether PI-Neph light-scattering measurements alone are sufficient to reconstruct the results of this ancillary data classification algorithm. Principal component analysis (PCA) is used to reduce the dimensionality of the multi-angle PI-Neph scattering data and the individual measurements are examined as a function of ancillary data classification. Clear clustering is observed in the PCA score space, corresponding to the ancillary classification results, suggesting that, indeed, a strong link exists between the angular-scattering measurements and the aerosol type or composition. Two techniques are used to quantify the degree of clustering and it is found that in most cases the results of the ancillary data classification can be predicted from PI-Neph measurements alone with better than 85 % recall. This result both emphasizes the validity of the ancillary data classification as well as the PI-Neph's ability to distinguish common aerosol types without additional information.

  1. Interface-induced spin Hall magnetoresistance enhancement in Pt-based tri-layer structure.

    Science.gov (United States)

    Huang, Shun-Yu; Li, Hong-Lin; Chong, Cheong-Wei; Chang, Yu-Ying; Lee, Min-Kai; Huang, Jung-Chun-Andrew

    2018-01-08

    In this study, we integrated bilayer structure of covered Pt on nickel zinc ferrite (NZFO) and CoFe/Pt/NZFO tri-layer structure by pulsed laser deposition system for a spin Hall magnetoresistance (SMR) study. In the bilayer structure, the angular-dependent magnetoresistance (MR) results indicate that Pt/NZFO has a well-defined SMR behavior. Moreover, the spin Hall angle and the spin diffusion length, which were 0.0648 and 1.31 nm, respectively, can be fitted by changing the Pt thickness in the longitudinal SMR function. Particularly, the MR ratio of the bilayer structure (Pt/NZFO) has the highest changing ratio (about 0.135%), compared to the prototype structure Pt/Y 3 Fe 5 O 12 (YIG) because the NZFO has higher magnetization. Meanwhile, the tri-layer samples (CoFe/Pt/NZFO) indicate that the MR behavior is related with CoFe thickness as revealed in angular-dependent MR measurement. Additionally, comparison between the tri-layer structure with Pt/NZFO and CoFe/Pt bilayer systems suggests that the SMR ratio can be enhanced by more than 70%, indicating that additional spin current should be injected into Pt layer.

  2. Comparison of angular dependence of magnetic Barkhausen noise of hysteresis and initial magnetization curve in API5L steel

    Science.gov (United States)

    Chávez-Gonzalez, A. F.; Martínez-Ortiz, P.; Pérez-Benítez, J. A.; Espina-Hernández, J. H.; Caleyo, F.

    2018-01-01

    This work analyzes the differences between the magnetic Barkhausen noise corresponding to the initial magnetization curve and Barkhausen noise corresponding to one branch of the hysteresis loop in API-5L steel. The outcomes show that the Barkhausen noise signal corresponding to the initial magnetization curve and that corresponding to the hysteresis are significantly different. This difference is due to the presence of different processes of the domain wall dynamics in both phenomena. To study the processes present in magnetization dynamics for an applied field of H > 0, research into the angular dependence of a Barkhausen signal using applied field bands has revealed that a Barkhausen signal corresponding to the initial magnetization curve is more suitable than a Barkhausen signal corresponding to the hysteresis loop.

  3. Magnetoresistance effect in a both magnetically and electrically modulated nanostructure

    International Nuclear Information System (INIS)

    Lu, Mao-Wang; Yang, Guo-Jian

    2007-01-01

    We propose a magnetoresistance device in a both magnetically and electrically modulated two-dimensional electron gas, which can be realized experimentally by the deposition, on the top and bottom of a semiconductor heterostructure, of two parallel metallic ferromagnetic strips under an applied voltage. It is shown that a considerable magnetoresistance effect can be achieved in such a device due to the significant transmission difference for electrons through parallel and antiparallel magnetization configurations. It is also shown that the magnetoresistance ratio depends strongly on the applied voltage to the stripe in the device. These interesting properties may provide an alternative scheme to realize magnetoresistance effect in hybrid ferromagnetic/semiconductor nanosystems, and this system may be used as a voltage-tunable magnetoresistance device

  4. Hopping magnetotransport via nonzero orbital momentum states and organic magnetoresistance.

    Science.gov (United States)

    Alexandrov, Alexandre S; Dediu, Valentin A; Kabanov, Victor V

    2012-05-04

    In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance quadratic in a weak magnetic field, B. We extend the theory of hopping magnetoresistance to states with nonzero orbital momenta. Different from s states, a weak magnetic field expands the electron (hole) wave functions with positive magnetic quantum numbers, m>0, and shrinks the states with negative m in a wide region outside the point defect. This together with a magnetic-field dependence of injection/ionization rates results in a negative weak-field magnetoresistance, which is linear in B when the orbital degeneracy is lifted. The theory provides a possible explanation of a large low-field magnetoresistance in disordered π-conjugated organic materials.

  5. Large magnetoresistance tunnelling through a magnetically modulated nanostructure

    International Nuclear Information System (INIS)

    Lu Maowang; Zhang Lide

    2003-01-01

    Based on a combination of an inhomogeneous magnetic field and a two-dimensional electron gas, we have constructed a giant magnetoresistance nanostructure, which can be realized experimentally by the deposition of two parallel ferromagnetic strips on top of a semiconductor heterostructure. We have theoretically studied the magnetoresistance for electrons tunnelling through this nanostructure. It is shown that there exists a significant transmission difference between the parallel and antiparallel magnetization configurations, which leads to a large magnetoresistance. It is also shown that the magnetoresistance ratio strongly depends not only on incident electronic energy but also on the ferromagnetic strips, and thus a much larger magnetoresistance ratio can be obtained by properly fabricating the ferromagnetic strips in the system

  6. On the magnetoresistance of heavy fermion compounds

    International Nuclear Information System (INIS)

    Lee Chengchung; Chen Chung

    1992-09-01

    Starting from two-conduction-band Anderson lattice model, the magneto-transport properties of heavy fermion systems are studied in the slave boson mean field theory. The residual magnetoresistivity induced by different kinds of impurities is calculated, and the experimentally detected positive maximum structure in the residual magnetoresistance of heavy fermion systems is reproduced. The transition of field-dependent resistivity from nonmonotonic to monotonic behaviour with increasing temperature can be explained naturally by including the charge fluctuation effect. The influence of applied pressure is also investigated. (author). 22 refs, 5 figs

  7. Leaked filters for energetic and angular dependence corrections of thermoluminescent response

    International Nuclear Information System (INIS)

    Manzoli, Jose Eduardo; Shammas, Gabriel Issa Jabra; Campos, Vicente de Paulo de

    2007-01-01

    Many thermoluminescent materials has been developed and used for photon personal dosimetry but no one has all desired characteristics alone. These characteristics include robustness, high sensitivity, energy photon independence, large range of photon energy detection, good reproducibility and small fading. The phosphors advantages begin to be more required and its disadvantages have became more apparent, in a global market more and more competitive. Calcium Sulfate Dysprosium doped (CaSO 4 :Dy) and Calcium Fluoride Manganese doped (CaF 2 :Mn) phosphor Thermoluminescent Dosimeters (TLDs) have been used by many laboratories. They are used in environmental and area monitoring, once they present more sensibility than other phosphors, like LiF:Mg. Theirs main disadvantage is the strong energetic dependence response, which must be corrected for theirs application in routine, where the kind of photon radiation is unknown a priori. An interesting way to make this correction is to interject a leaked filter between the beam and the phosphor, where the beam could strike the phosphor at any angle. In order to reduce the energetic dependence on any incidence angle, this work presents experimental and simulation studies on some filter geometries. It was made TL readings and simulations on TL responses to photon irradiations with gamma rays of 60 Co and X-rays of 33; 48 and 118 keV, on many incidence angles from zero to ninety degrees. The results pointed out the best filter thicknesses and widths, in order to optimize the correction of energetic dependence for the studied geometries. (author)

  8. Tunneling anisotropic magnetoresistance driven by magnetic phase transition.

    Science.gov (United States)

    Chen, X Z; Feng, J F; Wang, Z C; Zhang, J; Zhong, X Y; Song, C; Jin, L; Zhang, B; Li, F; Jiang, M; Tan, Y Z; Zhou, X J; Shi, G Y; Zhou, X F; Han, X D; Mao, S C; Chen, Y H; Han, X F; Pan, F

    2017-09-06

    The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling anisotropic magnetoresistance dependent on the anisotropic density of states with no room temperature performance so far. Here, we report an alternative approach to obtaining tunneling anisotropic magnetoresistance in α'-FeRh-based junctions driven by the magnetic phase transition of α'-FeRh and resultantly large variation of the density of states in the vicinity of MgO tunneling barrier, referred to as phase transition tunneling anisotropic magnetoresistance. The junctions with only one α'-FeRh magnetic electrode show a magnetoresistance ratio up to 20% at room temperature. Both the polarity and magnitude of the phase transition tunneling anisotropic magnetoresistance can be modulated by interfacial engineering at the α'-FeRh/MgO interface. Besides the fundamental significance, our finding might add a different dimension to magnetic random access memory and antiferromagnet spintronics.Tunneling anisotropic magnetoresistance is promising for next generation memory devices but limited by the low efficiency and functioning temperature. Here the authors achieved 20% tunneling anisotropic magnetoresistance at room temperature in magnetic tunnel junctions with one α'-FeRh magnetic electrode.

  9. Dramatically decreased magnetoresistance in non-stoichiometric WTe2 crystals.

    Science.gov (United States)

    Lv, Yang-Yang; Zhang, Bin-Bin; Li, Xiao; Pang, Bin; Zhang, Fan; Lin, Da-Jun; Zhou, Jian; Yao, Shu-Hua; Chen, Y B; Zhang, Shan-Tao; Lu, Minghui; Liu, Zhongkai; Chen, Yulin; Chen, Yan-Feng

    2016-05-27

    Recently, the layered semimetal WTe2 has attracted renewed interest owing to the observation of a non-saturating and giant positive magnetoresistance (~10(5)%), which can be useful for magnetic memory and spintronic devices. However, the underlying mechanisms of the giant magnetoresistance are still under hot debate. Herein, we grew the stoichiometric and non-stoichiometric WTe2 crystals to test the robustness of giant magnetoresistance. The stoichiometric WTe2 crystals have magnetoresistance as large as 3100% at 2 K and 9-Tesla magnetic field. However, only 71% and 13% magnetoresistance in the most non-stoichiometry (WTe1.80) and the highest Mo isovalent substitution samples (W0.7Mo0.3Te2) are observed, respectively. Analysis of the magnetic-field dependent magnetoresistance of non-stoichiometric WTe2 crystals substantiates that both the large electron-hole concentration asymmetry and decreased carrier mobility, induced by non-stoichiometry, synergistically lead to the decreased magnetoresistance. This work sheds more light on the origin of giant magnetoresistance observed in WTe2.

  10. Experimental investigation of the nature of the magnetoresistance effects in Pd-YIG hybrid structures.

    Science.gov (United States)

    Lin, Tao; Tang, Chi; Alyahayaei, Hamad M; Shi, Jing

    2014-07-18

    In bilayers consisting of Pd and yttrium iron garnet (Y(3)Fe(5)O(12) or YIG), we observe vanishingly small room-temperature conventional anisotropic magnetoresistance but large new magnetoresistance that is similar to the spin Hall magnetoresistance previously reported in Pt-YIG bilayers. We report a temperature dependence study of the two magnetoresistance effects in Pt-YIG bilayers. As the temperature is decreased, the new magnetoresistance shows a peak, whereas the anisotropic magnetoresistance effect starts to appear and increases monotonically. We find that the magnetoresistance peak shifts to lower temperatures in thicker Pd samples, a feature characteristic of the spin current effect. The distinct temperature dependence reveals fundamentally different mechanisms responsible for the two effects in such hybrid structures.

  11. Mars seasonal CO2 ice lifetimes and the angular dependence of albedo

    Science.gov (United States)

    Lindner, Bernhard Lee

    1992-01-01

    The albedo of the polar caps on Mars brightens appreciably at high solar zenith angle (Warren et al., J. Geophys. Res., 95, 14717, 1990), an effect not included in prior polar-cap energy-balance models. This decreases absorption of sunlight by the polar cap, hence decreasing sublimation of CO2 ice. Lindner (J. Geophys. Res., 95, 1367, 1990) has shown that the radiative effects of clouds and airborne dust will increase sublimation of CO2 ice over that predicted by prior polar-cap energy-balance models. Furthermore, observations hint that more clouds may exist in the Northern Hemisphere, which Lindner (1990) has shown would sublime CO2 ice more quickly in the north than in the south. I show here that the effects of the solar zenith angle dependence of albedo and the radiative effects of clouds and dust offset each other, but act to extend the lifetime of CO2 ice on the south pole more than on the north pole, possibly explaining the observed hemispherical asymmetry in the residual polar caps without the need of a hemispherical asymmetry in polar-cap albedo required by prior models. Another positive aspect of this solution is that neither the inclusion of the solar zenith angle dependence of albedo nor the radiative effects of clouds and dust should appreciably change prior model agreement with observations of the annual cycle of surface pressure and the recession of the polar caps equatorward of 75 degrees latitude.

  12. Theoretical Study on Angular Dependence of X-ray Natural Circular Dichroism

    Science.gov (United States)

    Katsumoto, Hiroshi; Fujii, Hitoshi; Oguchi, Tamio

    Natural circular dichroism (NCD) can be detected as a difference in the photo-absorption between right- and left-circularly polarized lights in a non-centrosymmetric crystal. It originates in an interference term of electric dipole (E1) and magnetic dipole (M1) transitions in optical ranges, while in that of E1 and electric quadruple (E2) transition in x-ray ranges. In the latter case, the electronic transitions occur from particular inner core states to empty conduction bands depending on the x-ray energy and polarization, being called selection rules. To cause such an interference, the final states should be parity violated because of the selection rules for the E1 and E2 transitions. In this study, we calculate x-ray NCD (XNCD) spectra by using density-functional-theory electronic structure calculation method and Fermi's golden rule for LiIO3 (space group P63) and TeO2 (P212121). The dependence of the incident angle in the XNCD spectra is calculated and discussed in detail by comparing with its analytic expression.

  13. THE MASS-DEPENDENCE OF ANGULAR MOMENTUM EVOLUTION IN SUN-LIKE STARS

    International Nuclear Information System (INIS)

    Matt, Sean P.; Baraffe, Isabelle; Chabrier, Gilles; Brun, A. Sacha; Bouvier, Jérôme

    2015-01-01

    To better understand the observed distributions of the rotation rate and magnetic activity of Sun-like and low-mass stars, we derive a physically motivated scaling for the dependence of the stellar wind torque on the Rossby number. The torque also contains an empirically derived scaling with stellar mass (and radius), which provides new insight into the mass-dependence of stellar magnetic and wind properties. We demonstrate that this new formulation explains why the lowest mass stars are observed to maintain rapid rotation for much longer than solar-mass stars, and simultaneously why older populations exhibit a sequence of slowly rotating stars, in which the low-mass stars rotate more slowly than solar-mass stars. The model also reproduces some previously unexplained features in the period-mass diagram for the Kepler field, notably: the particular shape of the ''upper envelope'' of the distribution, suggesting that ∼95% of Kepler field stars with measured rotation periods are younger than ∼4 Gyr; and the shape of the ''lower envelope'', corresponding to the location where stars transition between magnetically saturated and unsaturated regimes

  14. Probing giant magnetoresistance with THz spectroscopy

    DEFF Research Database (Denmark)

    Jin, Zuanming; Tkach, Alexander; Casper, Frederick

    2014-01-01

    We observe a giant magnetoresistance effect in CoFe/Cu-based multistack using THz time-domain spectroscopy. The magnetic field-dependent dc conductivity, electron scattering time, as well as spin-asymmetry parameter of the structure are successfully determined. © 2014 OSA....

  15. Angular dependence of Jc for YBCO coated conductors at low temperature and very high magnetic fields

    International Nuclear Information System (INIS)

    Xu, A; Jaroszynski, J J; Kametani, F; Chen, Z; Larbalestier, D C; Viouchkov, Y L; Chen, Y; Xie, Y; Selvamanickam, V

    2010-01-01

    We present very high field angle dependent critical current density (J c ) data for three recently obtained YBa 2 Cu 3 O 7-x (YBCO) coated conductors used in the construction of high field solenoids. We find that strongly correlated pins, such as BaZrO 3 (BZO) nanorods, while yielding strong c-axis peaks at 77 K, produce almost no measurable contribution at 4 K. Raising the field from c (θ) at low fields to a marked cusp-like behavior at high fields. Transmission electron micrographs show that all samples contain a high density of stacking faults which strengthen the plane correlated pinning parallel to the ab planes produced by the intrinsic ab-plane pinning of the Cu-O charge reservoir layers.

  16. Angular dependence and symmetry of Rashba spin torque in ferromagnetic heterostructures

    KAUST Repository

    Ortiz Pauyac, Christian

    2013-06-26

    In a ferromagnetic heterostructure, the interplay between Rashba spin-orbit coupling and exchange splitting gives rise to a current-driven spin torque. In a realistic device setup, we investigate the Rashba spin torque in the diffusive regime and report two major findings: (i) a nonvanishing torque exists at the edges of the device even when the magnetization and effective Rashba field are aligned; (ii) anisotropic spin relaxation rates driven by the Rashba spin-orbit coupling assign the spin torque a general expression T = T y (θ) m × (y × m) + T y (θ) y × m + T z (θ) m × (z × m) + T z (θ) z × m, where the coefficients T, y, z depend on the magnetization direction. Our results agree with recent experiments. © 2013 AIP Publishing LLC.

  17. Quantifying angular dependence of spin-orbit torques in Ta/CoFeB/MgO trilayers with perpendicular magnetic anisotropy

    Science.gov (United States)

    Chen, Yunpeng; Celik, Halise; Wang, Tao; Kannan, Harsha; Krivorotov, Ilya N.; Xiao, John Q.

    2017-04-01

    The spin-orbit interactions in heavy-metal/ferromagnet heterostructures have attracted considerable attention because they provide an efficient way to manipulate the magnetization with strong current-driven spin-orbit torques (SOTs) via the spin Hall effect in the heavy metal or Rashba effect due to the symmetry breaking at the interface. Theoretical calculations predict no dependence of the SOTs on the out-of-plane angle of magnetization due to spin Hall effect, but Rashba effect induces a nontrivial angular dependence of SOTs. Quantitative measurements with adiabatic harmonic Hall technique have observed the angular dependence in Ta/CoFeB/MgO or Pt /Co /Al Ox with perpendicular magnetic anisotropy. However, this method is complicated because the signal consists of both anomalous and planar Hall contributions. In addition, the fitting of the measurement data is sensitive to the fitting parameters, particularly to the perpendicular anisotropy, in a certain angle region (40-70°). To avoid this uncertainty, we have developed a scheme to quantify the angular dependence of SOTs based on the magneto-optic Kerr effect with field calibration. Without fitting procedures, we precisely determine the SOTs and their angle dependence on the magnetization orientation. We observe a strong angular dependence that is different from the previous experimental observations. Based on this strong dependence, we conclude that a Rashba effect at the same interface, that is responsible for the perpendicular magnetic anisotropy, is the dominant mechanism for the current-driven SOTs in this system.

  18. Angular-dependent EDMR linewidth for spin-dependent space charge limited conduction in a polycrystalline pentacene

    Science.gov (United States)

    Fukuda, Kunito; Asakawa, Naoki

    2017-08-01

    Spin-dependent space charge limited carrier conduction in a Schottky barrier diode using polycrystalline p-type π-conjugated molecular pentacene is explored using multiple-frequency electrically detected magnetic resonance (EDMR) spectroscopy with a variable-angle configuration. The measured EDMR spectra are decomposed into two components derived respectively from mobile and trapped positive polarons. The linewidth of the EDMR signal for the trapped polarons increases with increasing resonance magnetic field for an in-plane configuration where the normal vector of the device substrate is perpendicular to the resonance magnetic field, while it is independent of the field for an out-of-plane configuration. This difference is consistent with the pentacene arrangement on the device substrate, where pentacene molecules exhibit a uniaxial orientation on the out-of-substrate plane. By contrast, the mobile polarons do not show anisotropic behavior with respect to the resonance magnetic field, indicating that the anisotropic effect is averaged out owing to carrier motion. These results suggest that the orientational arrangements of polycrystalline pentacene molecules in a nano thin film play a crucial role in spin-dependent electrical conduction.

  19. Angular-Dependent EDMR Linewidth for Spin-Dependent Space-Charge-Limited Conduction in a Polycrystalline Pentacene

    Directory of Open Access Journals (Sweden)

    Kunito Fukuda

    2017-08-01

    Full Text Available Spin-dependent space-charge-limited carrier conduction in a Schottky barrier diode using polycrystalline p-type π-conjugated molecular pentacene is explored using multiple-frequency electrically detected magnetic resonance (EDMR spectroscopy with a variable-angle configuration. The measured EDMR spectra are decomposed into two components derived, respectively, from mobile and trapped positive polarons. The linewidth of the EDMR signal for the trapped polarons increases with increasing resonance magnetic field for an in-plane configuration where the normal vector of the device substrate is perpendicular to the resonance magnetic field, while it is independent of the field for an out-of-plane configuration. This difference is consistent with the pentacene arrangement on the device substrate, where pentacene molecules exhibit a uniaxial orientation on the out-of-substrate plane. By contrast, the mobile polarons do not show anisotropic behavior with respect to the resonance magnetic field, indicating that the anisotropic effect is averaged out owing to carrier motion. These results suggest that the orientational arrangements of polycrystalline pentacene molecules in a nano thin film play a crucial role in spin-dependent electrical conduction.

  20. Angular dependent anisotropic terahertz response of vertically aligned multi-walled carbon nanotube arrays with spatial dispersion

    Science.gov (United States)

    Zhou, Yixuan; E., Yiwen; Xu, Xinlong; Li, Weilong; Wang, Huan; Zhu, Lipeng; Bai, Jintao; Ren, Zhaoyu; Wang, Li

    2016-01-01

    Spatial dispersion effect of aligned carbon nanotubes (CNTs) in the terahertz (THz) region has significance for both theoretical and applied consideration due to the unique intrinsically anisotropic physical properties of CNTs. Herein, we report the angular dependent reflection of p-polarized THz wave from vertically aligned multi-walled CNT arrays in both experiment and theory. The spectra indicate that the reflection depends on the film thickness of vertically aligned CNTs, the incident angle, and the frequency. The calculation model is based on the spatial dispersion effect of aligned CNTs and performed with effective impedance method and the Maxwell-Garnett approximation. The results fit well with the experiment when the thickness of CNT film is thin, which reveals a coherent superposition mechanism of the CNT surface reflection and CNTs/Si interface reflection. For thick CNT films, the CNTs/Si interface response determines the reflection at small incident angles, while the CNTs surface effect dominates at large incident angles. This work investigates the spatial dispersion effect of vertically aligned CNT arrays in the THz region, and paves a way for potential anisotropic THz applications based on CNTs with oblique incidence requirements. PMID:27966549

  1. Tuning of gravity-dependent and gravity-independent vertical angular VOR gain changes by frequency of adaptation.

    Science.gov (United States)

    Yakushin, Sergei B

    2012-06-01

    The gain of the vertical angular vestibulo-ocular reflex (aVOR) was adaptively increased and decreased in a side-down head orientation for 4 h in two cynomolgus monkeys. Adaptation was performed at 0.25, 1, 2, or 4 Hz. The gravity-dependent and -independent gain changes were determined over a range of head orientations from left-side-down to right-side-down at frequencies from 0.25 to 10 Hz, before and after adaptation. Gain changes vs. frequency data were fit with a Gaussian to determine the frequency at which the peak gain change occurred, as well as the tuning width. The frequency at which the peak gravity-dependent gain change occurred was approximately equal to the frequency of adaptation, and the width increased monotonically with increases in the frequency of adaptation. The gravity-independent component was tuned to the adaptive frequency of 0.25 Hz but was uniformly distributed over all frequencies when the adaptation frequency was 1-4 Hz. The amplitude of the gravity-independent gain changes was larger after the aVOR gain decrease than after the gain increase across all tested frequencies. For the aVOR gain decrease, the phase lagged about 4° for frequencies below the adaptation frequency and led for frequencies above the adaptation frequency. For gain increases, the phase relationship as a function of frequency was inverted. This study demonstrates that the previously described dependence of aVOR gain adaptation on frequency is a property of the gravity-dependent component of the aVOR only. The gravity-independent component of the aVOR had a substantial tuning curve only at an adaptation frequency of 0.25 Hz.

  2. Spin Hall magnetoresistance in Ta/CoFe2O4 nanostructures

    Science.gov (United States)

    Hui, Ya-Juan; Cheng, Wei-Ming; Zhang, Zhao-Bing; Ji, Hong-Kai; Cheng, Xiao-Min; You, Long; Miao, Xiang-Shui

    2016-07-01

    Spin Hall magnetoresistance (SMR) has been investigated in Ta/CoFe2O4 nanostructures grown on different substrates. Spin currents in CoFe2O4 films are electrically detected in adjacent Ta layers owing to inverse spin Hall effects. The sign of the magnetic-field-dependent resistivity signal shows different polarities along different axes, showing different spin-dependent electron transports. A cosinelike curve of the angular dependence signal with opposite polarity is observed in two orthogonal magnetization planes, whereas a basic line is observed in another plane, revealing the spin accumulation phenomenon. The roughness of the CoFe2O4 surface tuned by substrate strains is responsible for the extent of spin accumulations and the strength of the SMR signal in the nanostructures.

  3. Angular and energy dependence of radiation protection monitors to the quantity ambient dose equivalent for gamma radiation;Dependencia angular e energetica de monitores de radioprotecao para medidas de equivalente de dose ambiental para radiacao gama

    Energy Technology Data Exchange (ETDEWEB)

    Nonato, Fernanda B.C.; Carvalho, Valdir S.; Diniz, Raphael E.; Caldas, Linda V.E. [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2009-07-01

    In Brazil, most of the equipment used for monitoring area is just used in the quantities exposure and absorbed dose, with the need of adjustment to the ambient dose equivalent, H{sup *}(10). In this work, 19 Geiger-Mueller detectors and 7 ionization chambers were calibrated in the Calibration Laboratory of the Instituto de Pesquisas Energeticas Nucleares, IPEN. The energy dependence of these radiation detectors was studied for gamma radiation ({sup 137}Cs e {sup 60}Co) and the angular dependence, for {sup 137}Cs radiation. (author)

  4. Magnetoresistance and Hall resistivity of semimetal WTe2 ultrathin flakes.

    Science.gov (United States)

    Luo, Xin; Fang, Chi; Wan, Caihua; Cai, Jialin; Liu, Yong; Han, Xiufeng; Lu, Zhihong; Shi, Wenhua; Xiong, Rui; Zeng, Zhongming

    2017-04-07

    This article reports the characterization of WTe 2 thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the compensation of electrons and holes. By relating experimental results to a classic two-band model, the lower magnetoresistance values in our samples is demonstrated to be caused by decreased carrier mobility. The dependence of mobility on temperature indicates the main role of optical phonon scattering at high temperatures. Our results provide more detailed information on carrier behavior and scattering mechanisms in WTe 2 thin films.

  5. Large magnetoresistance in La-Ca-Mn-O films

    International Nuclear Information System (INIS)

    Chen, L.H.; Jin, S.; Tiefel, T.H.; Ramesh, R.; Schurig, D.

    1995-01-01

    A very large magnetoresistance value in excess of 10 6 % has been obtained at 110 K, H = 6 T in La-Ca-Mn-O thin films epitaxially grown on LaAlO 3 substrates by pulsed laser deposition. The as-deposited film exhibits a substantial magnetoresistance value of 39,000%, which is further improved by heat treatment. A strong dependence of the magnetoresistance on film thickness was observed, with the value reduced by orders of magnitude when the film is made thicker than ∼2,000 angstrom. This behavior is interpreted in terms of lattice strain in the La-Ca-Mn-O films

  6. Angular dependence of the magnetic properties of permalloy and nickel nanowires as a function of their diameters

    Science.gov (United States)

    Raviolo, Sofía; Tejo, Felipe; Bajales, Noelia; Escrig, Juan

    2018-01-01

    In this paper we have compared the angular dependence of the magnetic properties of permalloy (Ni80Fe20) and nickel nanowires by means of micromagnetic simulations. For each material we have chosen two diameters, 40 and 100 nm. Permalloy nanowires with smaller diameters (d = 40 nm) exhibit greater coercivity than nickel nanowires, regardless of the angle at which the external magnetic field is applied. In addition, both Py and Ni nanowires exhibit the same remanence values. However, the nanowires of larger diameters (d = 100 nm) exhibit a more complex behavior, noting that for small angles, nickel nanowires are those that now exhibit a greater coercivity in comparison to those of permalloy. The magnetization reversal modes vary as a function of the angle at which the external field is applied. When the field is applied parallel to the wire axis, it reverts through nucleation and propagation of domain walls, whereas when the field is applied perpendicular to the axis, it reverts by a pseudo-coherent rotation. These results may provide a guide to control the magnetic properties of nanowires for use in potential applications.

  7. Spin Hall magnetoresistance in the non-collinear ferrimagnet GdIG close to the compensation temperature.

    Science.gov (United States)

    Dong, Bo-Wen; Cramer, Joel; Ganzhorn, Kathrin; Yuan, H Y; Guo, Er-Jia; Goennenwein, Sebastian T B; Kläui, Mathias

    2018-01-24

    We investigate the spin Hall magnetoresistance (SMR) in a gadolinium iron garnet (GdIG)/platinum (Pt) heterostructure by angular dependent magnetoresistance measurements. The magnetic structure of the ferromagnetic insulator GdIG is non-collinear near the compensation temperature, while it is collinear far from the compensation temperature. In the collinear regime, the SMR signal in GdIG is consistent with the usual [Formula: see text] relation well established in the collinear magnet yttrium iron garnet, with [Formula: see text] the angle between magnetization and spin Hall spin polarization direction. In the non-collinear regime, both an SMR signal with inverted sign and a more complex angular dependence with four maxima are observed within one sweep cycle. The number of maxima as well as the relative strength of different maxima depend strongly on temperature and field strength. Our results evidence a complex SMR behavior in the non-collinear magnetic regime that goes beyond the conventional formalism developed for collinear magnetic structures.

  8. Effect of crystallinity on the magnetoresistance in perovskite manganese oxide thin films

    International Nuclear Information System (INIS)

    Shreekala, R.; Rajeswari, M.; Ghosh, K.; Goyal, A.; Gu, J.Y.; Kwon, C.; Trajanovic, Z.; Boettcher, T.; Greene, R.L.; Ramesh, R.; Venkatesan, T.

    1997-01-01

    We report our study of the effect of crystallinity on the magnetoresistance in epitaxial and polycrystalline La 2/3 Ba 1/3 MnO 3 and La 2/3 Ca 1/3 MnO 3 thin films. Magnetoresistance in epitaxial films exhibits field dependence and temperature dependence similar to bulk single crystals and sintered bulk ceramics. The polycrystalline films exhibit a markedly different behavior. The magnetoresistance in this case shows either a monotonic increase or saturation with decreasing temperature in contrast to that of epitaxial films in which the magnetoresistance peaks close to the ferromagnetic transition temperature. The field dependence in the polycrystalline films is also remarkably different. At low fields, we observe a sharp drop in resistance followed by a more gradual decrease at higher fields. Our data suggest that in addition to the intrinsic magnetoresistance, grain-boundary transport contributes significantly to the magnetoresistance in polycrystalline films. copyright 1997 American Institute of Physics

  9. The effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors

    International Nuclear Information System (INIS)

    Zhao Jun-Qing; Ding Meng; Zhang Tian-You; Zhang Ning-Yu; Pang Yan-Tao; Ji Yan-Ju; Chen Ying; Wang Feng-Xiang; Fu Gang

    2012-01-01

    We investigated the effect of spin-orbit coupling on magnetoresistance in nonmagnetic organic semiconductors. A Lorentz-type magnetoresistance is obtained from spin-orbit coupling-dependent spin precession under the condition of a space-charge-limited current. The magnetoresistance depends on the initial spin orientation of the electron with respect to the hole in electron—hole pairs, and the increasing spin-orbit coupling slows down the change in magnetoresistance with magnetic field. The field dependence, the sign and the saturation value of the magnetoresistance are composite effects of recombination and dissociation rate constants of singlet and triplet electron—hole pairs. The simulated magnetoresistance shows good consistency with the experimental results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers

    Science.gov (United States)

    Mizunuma, Kotaro; Yamanouchi, Michihiko; Ikeda, Shoji; Sato, Hideo; Yamamoto, Hiroyuki; Gan, Hua-Dong; Miura, Katsuya; Hayakawa, Jun; Matsukura, Fumihiro; Ohno, Hideo

    2011-02-01

    The authors investigated tunnel magnetoresistance (TMR) properties in [CoFe/Pd]-multilayer/CoFeB/MgO/CoFeB/[Pd/CoFe]-multilayer magnetic tunnel junctions (MTJs) having two different Pd layer thicknesses. By reducing the Pd layer thickness from 1.2 to 0.2 nm, the TMR ratio was enhanced from 7 to 101% at the annealing temperature (Ta) of 300 °C. The thin Pd layers resulted in high residual B concentration in the CoFeB layer after high-Ta annealing and in the suppression of crystallization of the CoFeB layer from the fcc(111)-Pd layer side.

  11. Time-Dependent and Time-Integrated Angular Analysis of B -> phi Ks pi0 and B -> phi K+ pi-

    Energy Technology Data Exchange (ETDEWEB)

    Aubert, B; Bona, M; Karyotakis, Y; Lees, J P; Poireau, V

    2008-08-04

    We perform a time-dependent and time-integrated angular analysis of the B{sup 0} {yields} {psi}K*(892){sup 0}, {psi}K*{sub 2}(1430{sup 0}), and {psi}(K{pi}){sub S-wave}{sup 0} decays with the final sample of about 465 million B{bar B} pairs recorded with the BABAR detector. Overall, twelve parameters are measured for the vector-vector decay, nine parameters for the vector-tensor decay, and three parameters for the vector-scalar decay, including the branching fractions, CP-violation parameters, and parameters sensitive to final state interaction. We use the dependence on the K{pi} invariant mass of the interference between the scalar and vector or tensor components to resolve discrete ambiguities of the strong and weak phases. We use the time-evolution of the B {yields} {psi}K{sub S}{sup 0}{pi}{sup 0} channel to extract the CP-violation phase difference {Delta}{phi}{sub 00} = 0.28 {+-} 0.42 {+-} 0.04 between the B and {bar B} decay amplitudes. When the B {yields} {psi}K{sup {+-}}{pi}{sup {-+}} channel is included, the fractions of longitudinal polarization f{sub L} of the vector-vector and vector-tensor decay modes are measured to be 0.494 {+-} 0.034 {+-} 0.013 and 0.901{sub -0.058}{sup +0.046} {+-} 0.037, respectively. This polarization pattern requires the presence of a helicity-plus amplitude in the vector-vector decay from a presently unknown source.

  12. Large linear magnetoresistivity in strongly inhomogeneous planar and layered systems

    International Nuclear Information System (INIS)

    Bulgadaev, S.A.; Kusmartsev, F.V.

    2005-01-01

    Explicit expressions for magnetoresistance R of planar and layered strongly inhomogeneous two-phase systems are obtained, using exact dual transformation, connecting effective conductivities of in-plane isotropic two-phase systems with and without magnetic field. These expressions allow to describe the magnetoresistance of various inhomogeneous media at arbitrary concentrations x and magnetic fields H. All expressions show large linear magnetoresistance effect with different dependencies on the phase concentrations. The corresponding plots of the x- and H-dependencies of R(x,H) are represented for various values, respectively, of magnetic field and concentrations at some values of inhomogeneity parameter. The obtained results show a remarkable similarity with the existing experimental data on linear magnetoresistance in silver chalcogenides Ag 2+δ Se. A possible physical explanation of this similarity is proposed. It is shown that the random, stripe type, structures of inhomogeneities are the most suitable for a fabrication of magnetic sensors and a storage of information at room temperatures

  13. Magnetoresistance anomaly in DyFeCo thin films

    International Nuclear Information System (INIS)

    Wu, J. C.; Wu, C. S.; Wu, Te-ho; Chen, Bing-Mau; Shieh, Han-Ping D.

    2001-01-01

    Microstructured rare-earth - transition-metal DyFeCo films have been investigated using magnetoresistance and extraordinary Hall-effect measurements. The Hall loops reveal variation of coercive fields depending on the linewidth and the composition of the films. The magnetoresistance curves, with changes up to as high as 1.3%, show positive/negative magnetoresistance peaks centered on the coercive fields depending on the linewidth of the films only. The variation of the coercivity can be attributed to the magnetic moment canting between the Dy and FeCo subcomponents and the existence of the diverged magnetization on the edges, and the anomalous magnetoresistance peaks observed are discussed with the existing theories. [copyright] 2001 American Institute of Physics

  14. Energy and angular dependences of common types of personal dosemeters in the mirror of the First national intercomparison of individual dosimetric monitoring laboratories in Ukraine.

    Science.gov (United States)

    Chumak, V; Deniachenko, N; Volosky, V

    2015-12-01

    In depth analysis of the results of the First National Intercomparison of individual dosimetry laboratories in Ukraine has revealed energy and angular responses of the most common types of personal dosemeters and dosi metric systems. Participating laboratories use 9 different types of dosimetric systems - automatic, semi automat ic and manual. If was found that energy dependences of the most common dosemeter types in Ukraine generally correspond to the literature data on respective TLD materials (LiF:Mg,Cu,P, LiF:Mg,TiandAl2O3:С), however, due to peculiarities of holders (filters) and dose algorithms, for some dosimetry systems the energy dependences can be improved (compensated). Angular dependences proved to be more pronounced: only two systems revealed weak dependence of response on the incident angle, for other systems at large angles (α=60°) dosemeters overestimate true dose values. V. Chumak, N. Deniachenko, V. Volosky.

  15. Anomalous interlayer magnetoresistance in bilayer crystals

    International Nuclear Information System (INIS)

    Smith, M F

    2012-01-01

    The interlayer magnetotransport of a model layered metal is calculated semiclassically. Each layer contains parallel quasi-1D wires but the orientation of wires within each layer is perpendicular to the orientation of wires in adjacent layers. The model has a highly anisotropic amplitude for interlayer electron transfer and is used to illustrate simply the effects that this anisotropy has on the magnetotransport. Strong positive magnetoresistance is calculated for magnetic fields parallel to the current, with the size of magnetoresistance varying inversely with the interlayer hopping amplitude. For fields perpendicular to the current, the magnetoresistance depends qualitatively on the orientation of the field: it scales linearly with the field strength B when the field points toward intersections of 1D Fermi surfaces belonging to individual layers, and scales as √B when the field points between intersections. In a weak field, the resistance is maximum when the field is orientated parallel to the current and minimum when it is perpendicular to the current. Magnetoresistance oscillations are also studied. The implications for more general models of multilayer metals are discussed. (paper)

  16. Magnetoresistance of a Low-k Dielectric

    Science.gov (United States)

    McGowan, Brian Thomas

    Low-k dielectrics have been incorporated into advanced computer chip technologies as a part of the continuous effort to improve computer chip performance. One drawback associated with the implementation of low-k dielectrics is the large leakage current which conducts through the material, relative to silica. Another drawback is that the breakdown voltage of low-k dielectrics is low, relative to silica [1]. This low breakdown voltage makes accurate reliability assessment of the failure mode time dependent dielectric breakdown (TDDB) in low-k dielectrics critical for the successful implementation of these materials. The accuracy with which one can assess this reliability is currently a topic of debate. These material drawbacks have motivated the present work which aims both to contribute to the understanding of electronic conduction mechanisms in low-k dielectrics, and to improve the ability to experimentally characterize changes which occur within the material prior to TDDB failure. What follows is a study of the influence of an applied magnetic field on the conductivity of a low-k dielectric, or in other words, a study of the material's magnetoresistance. This study shows that low-k dielectrics used as intra-level dielectrics exhibit a relatively large negative magnetoresistance effect (˜2%) at room temperature and with modest applied magnetic fields (˜100 Oe). The magnetoresistance is attributed to the spin dependence of trapping electrons from the conduction band into localized electronic sites. Mixing of two-electron spin states via interactions between electron spins and the the spins of hydrogen nuclei is suppressed by an applied magnetic field. As a result, the rate of trapping is reduced, and the conductivity of the material increases. This study further demonstrates that the magnitude of the magnetoresistance changes as a function of time subjected to electrical bias and temperature stress. The rate that the magnetoresistance changes correlates to the

  17. Oscillations in magnetoresistance and interlayer coupling in magnetic sandwich structures

    International Nuclear Information System (INIS)

    Barnas, J.; Bulka, B.

    1997-01-01

    Kubo formalism is used to calculate the magnetoresistance due to magnetization rotation in a structure consisting two magnetic films separated by nonmagnetic layer. In the approximation of an uniform relaxation time of each layer, the oscillatory term in magnetoresistance corresponds to the oscillation period which depends on the potential barriers at the interfaces. This period is longer than the oscillation period observed in the coupling parameter. (author)

  18. The dependence of bar frequency on galaxy mass, colour, and gas content - and angular resolution - in the local universe

    Science.gov (United States)

    Erwin, Peter

    2018-03-01

    I use distance- and mass-limited subsamples of the Spitzer Survey of Stellar Structure in Galaxies (S4G) to investigate how the presence of bars in spiral galaxies depends on mass, colour, and gas content and whether large, Sloan Digital Sky Survey (SDSS)-based investigations of bar frequencies agree with local data. Bar frequency reaches a maximum of fbar ≈ 0.70 at M⋆ ˜ 109.7M⊙, declining to both lower and higher masses. It is roughly constant over a wide range of colours (g - r ≈ 0.1-0.8) and atomic gas fractions (log (M_{H I}/ M_{\\star }) ≈ -2.5 to 1). Bars are thus as common in blue, gas-rich galaxies are they are in red, gas-poor galaxies. This is in sharp contrast to many SDSS-based studies of z ˜ 0.01-0.1 galaxies, which report fbar increasing strongly to higher masses (from M⋆ ˜ 1010 to 1011M⊙), redder colours, and lower gas fractions. The contradiction can be explained if SDSS-based studies preferentially miss bars in, and underestimate the bar fraction for, lower mass (bluer, gas-rich) galaxies due to poor spatial resolution and the correlation between bar size and stellar mass. Simulations of SDSS-style observations using the S4G galaxies as a parent sample, and assuming that bars below a threshold angular size of twice the point spread function full width at half-maximum cannot be identified, successfully reproduce typical SDSS fbar trends for stellar mass and gas mass ratio. Similar considerations may affect high-redshift studies, especially if bars grow in length over cosmic time; simulations suggest that high-redshift bar fractions may thus be systematically underestimated.

  19. Measurement of angularly dependent spectra of betatron gamma-rays from a laser plasma accelerator with quadrant-sectored range filters

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Jong Ho, E-mail: jhjeon07@ibs.re.kr; Nakajima, Kazuhisa, E-mail: naka115@dia-net.ne.jp; Rhee, Yong Joo; Pathak, Vishwa Bandhu; Cho, Myung Hoon; Shin, Jung Hun; Yoo, Byung Ju; Jo, Sung Ha; Shin, Kang Woo [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 61005 (Korea, Republic of); Kim, Hyung Taek; Sung, Jae Hee; Lee, Seong Ku; Choi, Il Woo [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 61005 (Korea, Republic of); Advanced Photonics Research Institute, GIST, Gwangju 61005 (Korea, Republic of); Hojbota, Calin; Bae, Lee Jin; Jung, Jaehyung; Cho, Min Sang; Cho, Byoung Ick; Nam, Chang Hee [Center for Relativistic Laser Science, Institute for Basic Science (IBS), Gwangju 61005 (Korea, Republic of); Department of Physics and Photon Science, GIST, Gwangju 61005 (Korea, Republic of)

    2016-07-15

    Measurement of angularly dependent spectra of betatron gamma-rays radiated by GeV electron beams from laser wakefield accelerators (LWFAs) are presented. The angle-resolved spectrum of betatron radiation was deconvolved from the position dependent data measured for a single laser shot with a broadband gamma-ray spectrometer comprising four-quadrant sectored range filters and an unfolding algorithm, based on the Monte Carlo code GEANT4. The unfolded gamma-ray spectra in the photon energy range of 0.1–10 MeV revealed an approximately isotropic angular dependence of the peak photon energy and photon energy-integrated fluence. As expected by the analysis of betatron radiation from LWFAs, the results indicate that unpolarized gamma-rays are emitted by electrons undergoing betatron motion in isotropically distributed orbit planes.

  20. Percolative Theory of Organic Magnetoresistance and Fringe-Field Magnetoresistance

    Science.gov (United States)

    Flatté, Michael E.

    2013-03-01

    A recently-introduced percolation theory for spin transport and magnetoresistance in organic semiconductors describes the effects of spin dynamics on hopping transport by considering changes in the effective density of hopping sites, a key quantity determining the properties of percolative transport. Increases in the spin-flip rate open up ``spin-blocked'' pathways to become viable conduction channels and hence, as the spin-flip rate changes with magnetic field, produce magnetoresistance. Features of this percolative magnetoresistance can be found analytically in several regimes, and agree with measurements of the shape and saturation of measured magnetoresistance curves. We find that the threshold hopping distance is analogous to the branching parameter of a phenomenological two-site model, and that the distinction between slow and fast hopping is contingent on the threshold hopping distance. Regimes of slow and fast hopping magnetoresistance are uniquely characterized by their line shapes. Studies of magnetoresistance in known systems with controllable positional disorder would provide an additional stringent test of this theory. Extensions to this theory also describe fringe-field magnetoresistance, which is the influence of fringe magnetic fields from a nearby unsaturated magnetic electrode on the conductance of an organic film. This theory agrees with several key features of the experimental fringe-field magnetoresistance, including the applied fields where the magnetoresistance reaches extrema, the applied field range of large magnetoresistance effects from the fringe fields, and the sign of the effect. All work done in collaboration with N. J. Harmon, and fringe-field magnetoresistance work in collaboration also with F. Macià, F. Wang, M. Wohlgenannt and A. D. Kent. This work was supported by an ARO MURI.

  1. Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires

    OpenAIRE

    Butschkow, Christian H.; Reiger, Elisabeth; Geißler, Stefan; Rudolph, Andreas; Soda, Marcello; Schuh, Dieter; Woltersdorf, Georg; Wegscheider, Werner; Weiss, Dieter

    2011-01-01

    We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in transport can be ascribed to the interplay of the negative magnetoresistance effect and a strong uniaxial anisotropy with the magnetic easy direction pointing along the wire axis. The magnetoresistance can be well described by a quantitative analysis based on the ...

  2. Large linear magnetoresistance from neutral defects in Bi$_2$Se$_3$

    OpenAIRE

    Kumar, Devendra; Lakhani, Archana

    2016-01-01

    The chalcogenide Bi$_2$Se$_3$ can attain the three dimensional (3D) Dirac semimetal state under the influence of strain and microstrain. Here we report the presnece of large linear magnetoresistance in such a Bi$_2$Se$_3$ crystal. The magnetoresistance has quadratic form at low fields which crossovers to linear above 4 T. The temperature dependence of magnetoresistance scales with carrier mobility and the crossover field scales with inverse of mobility. Our analysis suggest that the linear ma...

  3. Magnetoresistance and noise properties of chevron stretcher detectors for field access bubble domain devices

    Science.gov (United States)

    George, P. K.; Oeffinger, T. R.; Chen, T. T.

    1976-01-01

    Experiments were devised to study the angular variation of the resistance and noise properties of one- and two-level chevron stretcher magnetoresistive detectors for use in field access bubble memory devices. All measurements, made with an electronic system, were performed on glass or garnet samples upon which 1 micron of SiO2 was sputter-deposited, followed by 4000 A of Permalloy for the 28-micron-period devices and 0.8 microns of SiO2, followed by 3000 A of Permalloy for the 20-micron-period devices. The geometrical and drive-state dependence of the zero-state noise were studied, as was its frequency dependence. It is found that both types of detectors operate primarily in the amplitude-shift mode for drive fields of interest and that the presence of a bubble in a detector causes a magnetoresistance change equal to that produced by increasing the in-plane drive field about 8 Oe in the absence of a bubble.

  4. Role of muscle pulleys in producing eye position-dependence in the angular vestibuloocular reflex: a model-based study

    Science.gov (United States)

    Thurtell, M. J.; Kunin, M.; Raphan, T.; Wall, C. C. (Principal Investigator)

    2000-01-01

    the roll gain of the angular vestibuloocular reflex was modified during the initial period of the response, while pulley coefficient was maintained at 0.5. Hence a roll gain modification allows stabilization of the retinal image without requiring a change in the pulley effect. Our results therefore indicate that the eye position-dependent velocity axis tilts could arise due to the effects of the pulleys and that a roll gain modification in the central vestibular structures may be responsible for countering the pulley effect.

  5. Magnetoresistance and magnetic ordering in praseodymium and neodymium hexaborides

    International Nuclear Information System (INIS)

    Anisimov, M. A.; Bogach, A. V.; Glushkov, V. V.; Demishev, S. V.; Samarin, N. A.; Filipov, V. B.; Shitsevalova, N. Yu.; Kuznetsov, A. V.; Sluchanko, N. E.

    2009-01-01

    The magnetoresistance Δρ/ρ of single-crystal samples of praseodymium and neodymium hexaborides (PrB 6 and NdB 6 ) has been measured at temperatures ranging from 2 to 20 K in a magnetic field of up to 80 kOe. The results obtained have revealed a crossover of the regime from a small negative magnetoresistance in the paramagnetic state to a large positive magnetoresistive effect in magnetically ordered phases of the PrB 6 and NdB 6 compounds. An analysis of the dependences Δρ(H)/ρ has made it possible to separate three contributions to the magnetoresistance for the compounds under investigation. In addition to the main negative contribution, which is quadratic in the magnetic field (-Δρ/ρ ∝ H 2 ), a linear positive contribution (Δρ/ρ ∝ H) and a nonlinear ferromagnetic contribution have been found. Upon transition to a magnetically ordered state, the linear positive component in the magnetoresistance of the PrB 6 and NdB 6 compounds becomes dominant, whereas the quadratic contribution to the negative magnetoresistance is completely suppressed in the commensurate magnetic phase of these compounds. The presence of several components in the magnetoresistance has been explained by assuming that, in the antiferromagnetic phases of PrB 6 and NdB 6 , ferromagnetic nanoregions (ferrons) are formed in the 5d band in the vicinity of the rareearth ions. The origin of the quadratic contribution to the negative magnetoresistance is interpreted in terms of the Yosida model, which takes into account scattering of conduction electrons by localized magnetic moments of rare-earth ions. Within the approach used, the local magnetic susceptibility χ loc has been estimated. It has been demonstrated that, in the temperature range T N loc for the compounds under investigation can be described with good accuracy by the Curie-Weiss dependence χ loc ∝ (T - Θ p ) -1 .

  6. In-plane tunneling anisotropic magnetoresistance in (Ga,Mn)As/GaAs Esaki diodes in the regime of the excess current

    Energy Technology Data Exchange (ETDEWEB)

    Shiogai, J. [Department of Materials Science, Tohoku University, Sendai 980-8579, Miyagi (Japan); Institute of Materials Research, Tohoku University, Sendai 980-8577, Miyagi (Japan); Ciorga, M., E-mail: mariusz.ciorga@ur.de; Utz, M.; Schuh, D.; Bougeard, D.; Weiss, D. [Institute of Experimental and Applied Physics, University of Regensburg, D-93040 Regensburg (Germany); Kohda, M.; Nitta, J. [Department of Materials Science, Tohoku University, Sendai 980-8579, Miyagi (Japan); Nojima, T. [Institute of Materials Research, Tohoku University, Sendai 980-8577, Miyagi (Japan)

    2015-06-29

    We investigate the angular dependence of the tunneling anisotropic magnetoresistance in (Ga,Mn)As/n-GaAs spin Esaki diodes in the regime where the tunneling process is dominated by the excess current through midgap states in (Ga,Mn)As. We compare it to similar measurements performed in the regime of band-to-band tunneling. Whereas the latter show biaxial symmetry typical for magnetic anisotropy observed in (Ga,Mn)As samples, the former is dominated by uniaxial anisotropy along the 〈110〉 axes.

  7. Angular dependence of Raman scattering selection rules for long-wavelength optical phonons in short-period GaAs/AlAs superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Volodin, V. A., E-mail: volodin@isp.nsc.ru [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Sachkov, V. A. [Russian Academy of Sciences, Omsk Scientific Center, Siberian Branch (Russian Federation); Sinyukov, M. P. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2016-07-15

    The angular dependence of Raman scattering selection rules for optical phonons in short-period (001) GaAs/AlAs superlattices is calculated and experimentally studied. Experiments are performed using a micro-Raman setup, in the scattering geometry with the wavevectors of the incident and scattered light lying in the plane of superlattices (so-called in-plane geometry). Phonon frequencies are calculated using the Born model taking the Coulomb interaction into account in the rigid-ion approximation. Raman scattering spectra are calculated in the framework of the deformation potential and electro-optical mechanisms. Calculations show an angular dependence of the selection rules for optical phonons with different directions of the wavevectors. Drastic differences in the selection rules are found for experimental and calculated spectra. Presumably, these differences are due to the Fröhlich mechanism in Raman scattering for short-period superlattices.

  8. Angular dependence of the sup(6)Li(πsup(+),sup(3)He)sup(3)He reaction

    International Nuclear Information System (INIS)

    McParland, B.J.; Auld, E.G.; Couvert, P.

    1985-02-01

    Angular distributions of the differential cross sections for the pionic fission sup(6)Li(πsup(+),sup(3)He)sup(3)He have been measured at pion energies of 60 and 80 MeV. The differential cross section is found to decrease monotonically with cossup(2)thetasup(*) and is compared with a theoretical prediction

  9. Angular dependence of plasma parameters and film properties during high power impulse magnetron sputtering for deposition of Ti and TiO.sub.2./sub. layers

    Czech Academy of Sciences Publication Activity Database

    Hippler, R.; Hubička, Zdeněk; Čada, Martin; Kšírová, Petra; Wulff, H.; Helm, C.A.; Straňák, V.

    2017-01-01

    Roč. 121, č. 17 (2017), s. 1-9, č. článku 171906. ISSN 0021-8979 R&D Projects: GA ČR(CZ) GA15-00863S Institutional support: RVO:68378271 Keywords : HiPIMS * Langmuir probe * titanium dioxide * angular dependence * XRD * SEM Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 2.068, year: 2016

  10. Magnetoresistance stories of double perovskites

    Indian Academy of Sciences (India)

    out. Keywords. Tunnelling magnetoresistance; tunnel boundary; disorder; double perovskite. PACS Nos 75.47.−m; 73.40.Gk; 72.80.Ga. 1. Introduction. Magnetoresistance (MR) is the property of a material to change the value of its electri- cal resistance when an external magnetic field is applied. This phenomenon was first.

  11. Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy.

    Science.gov (United States)

    Domingo, N; Farokhipoor, S; Santiso, J; Noheda, B; Catalan, G

    2017-08-23

    We measure the magnetotransport properties of individual 71° domain walls in multiferroic BiFeO 3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.

  12. Tuning giant magnetoresistance in rolled-up Co-Cu nanomembranes by strain engineering.

    Science.gov (United States)

    Müller, Christian; Bof Bufon, Carlos Cesar; Makarov, Denys; Fernandez-Outon, Luis E; Macedo, Waldemar A A; Schmidt, Oliver G; Mosca, Dante Homero

    2012-11-21

    Compact rolled-up Co-Cu nanomembranes of high quality with different numbers of windings are realized by strain engineering. A profound analysis of magnetoresistance (MR) is performed for tubes with a single winding and a varied number of Co-Cu bilayers in the stack. Rolled-up nanomembranes with up to 12 Co-Cu bilayers are successfully fabricated by tailoring the strain state of the Cr bottom layer. By carrying out an angular dependent study, we ruled out the contribution from anisotropic MR and confirm that rolled-up Co-Cu multilayers exhibit giant magnetoresistance (GMR). No significant difference of MR is found for a single wound tube compared with planar devices. In contrast, MR in tubes with multiple windings is increased at low deposition rates of the Cr bottom layer, whereas the effect is not observable at higher rates, suggesting that interface roughness plays an important role in determining the GMR effect of the rolled-up nanomembranes. Furthermore, besides a linear increase of the MR with the number of windings, the self-rolling of nanomembranes substantially reduces the device footprint area.

  13. Autoionization dynamics of excited collision systems: Angular dependence of the electron and ion energy spectra for He*(23S)+H

    International Nuclear Information System (INIS)

    Merz, A.; Ruf, M.; Hotop, H.

    1992-01-01

    We present the first angle-dependent energy spectra for the basic autoionization process He * (2 3 S)+H(1 2 S) leading to Penning ionization (→He+H + +e - ; PI) and associative ionization [→HeH + (v + ,J + )+e - ; AI]. Our results include electron energy spectra for both reaction channels and the H + -ion energy spectra for PI. The variation of the electron spectra with angle demonstrates the presence of substantial contributions from non-s-type electron partial waves, with the angle-dependent electron signals due to AI yielding clear information on the internal electron angular distribution of the autoionizing quasimolecule

  14. Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

    Energy Technology Data Exchange (ETDEWEB)

    Melilli, G.; Madon, B.; Wegrowe, J.-E., E-mail: jean-eric.wegrowe@polytechnique.edu; Clochard, M.-C., E-mail: clochard@cea.fr

    2015-12-15

    The effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW) are investigated at the nanoscale by measuring the change of magnetization (i.e. using the inverse magnetostriction effect). The magnetization state is measured locally by anisotropic magnetoresistance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. The inverse magnetostriction was found to be responsible for a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≈ 10 K. In other terms, the variation of the magnetization due to the stress compensates the effect of external magnetic field applied on the NW resistance. The induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification could be attributed to three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress–strain law. We investigate here the role of these different contributions using track-etched polymer membranes irradiated at various angles (α{sub irrad}) leading to, after electrodeposition, embedded Ni NWs of different orientations.

  15. Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

    Science.gov (United States)

    Melilli, G.; Madon, B.; Wegrowe, J.-E.; Clochard, M.-C.

    2015-12-01

    The effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW) are investigated at the nanoscale by measuring the change of magnetization (i.e. using the inverse magnetostriction effect). The magnetization state is measured locally by anisotropic magnetoresistance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. The inverse magnetostriction was found to be responsible for a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≈ 10 K. In other terms, the variation of the magnetization due to the stress compensates the effect of external magnetic field applied on the NW resistance. The induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification could be attributed to three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress-strain law. We investigate here the role of these different contributions using track-etched polymer membranes irradiated at various angles (αirrad) leading to, after electrodeposition, embedded Ni NWs of different orientations.

  16. Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

    International Nuclear Information System (INIS)

    Melilli, G.; Madon, B.; Wegrowe, J.-E.; Clochard, M.-C.

    2015-01-01

    The effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW) are investigated at the nanoscale by measuring the change of magnetization (i.e. using the inverse magnetostriction effect). The magnetization state is measured locally by anisotropic magnetoresistance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. The inverse magnetostriction was found to be responsible for a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≈ 10 K. In other terms, the variation of the magnetization due to the stress compensates the effect of external magnetic field applied on the NW resistance. The induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification could be attributed to three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress–strain law. We investigate here the role of these different contributions using track-etched polymer membranes irradiated at various angles (α irrad ) leading to, after electrodeposition, embedded Ni NWs of different orientations.

  17. Current perpendicular to plane giant magnetoresistance and tunneling magnetoresistance treated with unified model

    NARCIS (Netherlands)

    Jonkers, PAE

    2002-01-01

    The conceptual similarity between current perpendicular to plane giant magnetoresistance (CPP-GMR) and tunneling magnetoresistance (TMR) is exploited by utilizing a unified single-particle model accounting for both types of magnetoresistance. By defining structures composed of ferromagnetic,

  18. Angular dependence of Kβ/Kα intensity ratios of thick Ti and Cu pure elements from 10-25 keV electron bombardment

    Science.gov (United States)

    Singh, B.; Kumar, S.; Prajapati, S.; Singh, B. K.; Llovet, X.; Shanker, R.

    2018-02-01

    Measurements yielding the first results on angular dependence of Kβ/Kα X-ray intensity ratios of thick Ti (Z = 22) and Cu (Z = 29) targets induced by 10-25 keV electrons are presented. The measurements were done by rotating the target surface around the electron beam direction in the angular detection range 105° ≤ θ ≤ 165° in the reflection mode using an energy dispersive Si PIN photodiode detector. The measured angular dependence of Kβ/Kα intensity ratios is shown to be almost isotropic for Ti and Cu targets for the range of detection angles, 105° ≤ θ ≤ 150°, while there is a very weak increase beyond 150° for both targets. No dependence of Kβ/Kα intensity ratios on impact energy is observed; while on average, the value of the Kβ/Kα X-ray intensity ratio for Cu is larger by about 8% than that for Ti, which indicates a weak Z-dependence of the target. The experimental results are compared with those obtained from PENELOPE MC calculations and from the Evaluated Atomic Data Library (EADL) ratios. These results on Kβ/Kα X-ray intensity ratios are found to be in reasonable agreement in the detection angle range 105° ≤ θ ≤ 150° to within uncertainties, whereas the simulation and experimental results show a very slight increase in the intensity ratio with θ as the latter attains higher values. The results presented in this work provide a direct check on the accuracy of PENELOPE at oblique incidence angles for which there has been a lack of measurements in the literature until now.

  19. Resistance and magnetoresistance of annealed amorphous carbon films containing Fe3C nanograins

    International Nuclear Information System (INIS)

    Lee Yuhua; Han Taichun; Wur, C.-S.

    2004-01-01

    The temperature-dependent resistance and the field-dependent magnetoresistance were measured for films annealed at temperatures from 250 deg. C to 550 deg. C for a period of 60 min. Results of temperature-dependent resistance show electrical tunneling conductance in the films annealed at T a =250 deg. C and 350 deg. C only. The largest magnetoresistance ratio (MR) of 23% at temperature T=2 K was observed for T a =350 deg. C. The variations of both the temperature dependence of resistance and the magnetoresistance with the annealing temperature are discussed

  20. Anisotropy of magnetoresistance on trapping magnetic fields in granular HTSC

    CERN Document Server

    Sukhanov, A A

    2003-01-01

    The features of magnetoresistance in Bi (Pb)-HTSC ceramics with the magnetic fields trapped are investigated. It is found that on trapping magnetic flux the magnetoresistance in granular HTSC becomes anisotropic. Moreover, for magnetic fields H parallel and currents perpendicular to field H sub i which induces the trapping the magnetoresistance field dependence DELTA R(H) is nonmonotonic and the magnetoresistance is negative for small fields H < Hinv. The effect of trapped field and transport current and their orientations on the dependence DELTA R(H) is investigated. In particular, it is found that the field of magnetoresistance sign inversion Hinv almost linearly grows with increase of the effective trapped magnetic fields. Hinv decreases down to zero as the angle between fields H and H sub i increases up to pi/2 and slightly decreases with increasing transport current. The results are treated in terms of the model of magnetic flux trapping in superconducting grains or 'loops' embedded in a matrix of wea...

  1. Anomalous magnetoresistance in Fibonacci multilayers.

    Energy Technology Data Exchange (ETDEWEB)

    Machado, L. D.; Bezerra, C. G.; Correa, M. A.; Chesman, C.; Pearson, J. E.; Hoffmann, A. (Materials Science Division); (Universidade Federal do Rio Grande do Norte)

    2012-01-01

    We theoretically investigated magnetoresistance curves in quasiperiodic magnetic multilayers for two different growth directions, namely, [110] and [100]. We considered identical ferromagnetic layers separated by nonmagnetic layers with two different thicknesses chosen based on the Fibonacci sequence. Using parameters for Fe/Cr multilayers, four terms were included in our description of the magnetic energy: Zeeman, cubic anisotropy, bilinear coupling, and biquadratic coupling. The minimum energy was determined by the gradient method and the equilibrium magnetization directions found were used to calculate magnetoresistance curves. By choosing spacers with a thickness such that biquadratic coupling is stronger than bilinear coupling, unusual behaviors for the magnetoresistance were observed: (i) for the [110] case, there is a different behavior for structures based on even and odd Fibonacci generations, and, more interesting, (ii) for the [100] case, we found magnetic field ranges for which the magnetoresistance increases with magnetic field.

  2. Giant Magnetoresistance in Nanogranular Magnets

    OpenAIRE

    Glatz, A.; Beloborodov, I. S.; Vinokur, V. M.

    2007-01-01

    We study the giant magnetoresistance of nanogranular magnets in the presence of an external magnetic field and finite temperature. We show that the magnetization of arrays of nanogranular magnets has hysteretic behaviour at low temperatures leading to a double peak in the magnetoresistance which coalesces at high temperatures into a single peak. We numerically calculate the magnetization of magnetic domains and the motion of domain walls in this system using a combined mean-field approach and...

  3. Angular Momentum

    Science.gov (United States)

    Shakur, Asif; Sinatra, Taylor

    2013-01-01

    The gyroscope in a smartphone was employed in a physics laboratory setting to verify the conservation of angular momentum and the nonconservation of rotational kinetic energy. As is well-known, smartphones are ubiquitous on college campuses. These devices have a panoply of built-in sensors. This creates a unique opportunity for a new paradigm in…

  4. Angular dependence of TL and OSL responses of Al{sub 2}O{sub 3}:C commercial detectors in standard beta radiation beams

    Energy Technology Data Exchange (ETDEWEB)

    Antonio, Patricia L.; Caldas, Linda V.E., E-mail: patrilan@ipen.br, E-mail: lcaldas@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2014-07-01

    The luminescent response of radiation detectors was evaluated by means of the thermoluminescence (TL) and optically stimulated luminescence (OSL) phenomena, for verification of its application in radiation dosimetry. An angular dependence study was performed in this work, using Al{sub 2}O{sub 3}:C commercial detectors, which were exposed to the radiation beams of a {sup 90}Sr +{sup 90}Y source from a beta radiation secondary standard system. The detectors were irradiated with an angle variation from -60° to +60°, and the results obtained using the TL and OSL techniques were within the international recommendation limits. (author)

  5. Angular dependence of L x-ray emission in high-Z atoms bombarded by 18-60 MeV fluorine ions

    Science.gov (United States)

    Kumar, Ajay; Agnihotri, A. N.; Misra, D.; Kasthurirangan, S.; Sarkadi, L.; Tribedi, L. C.

    2012-11-01

    The L x-ray intensities of 79Au, 82Pb and 83Bi have been measured in collisions with 18-60 MeV fluorine ions in an angular range 20°-75°. The Ll x-ray intensity, normalized to the intensity of other L x-ray lines in the same spectrum, shows an anisotropic emission pattern and the degree of anisotropy depends on the impact energy of the projectile. The alignment parameter values for the L3 subshell, deduced from the measured anisotropy parameter for the Ll line, have been compared with the theoretical ones.

  6. Angular dependence of the upper critical field in Bi sub 2 Sr sub 2 CuO sub 6 sub + subdelta

    CERN Document Server

    Vedeneev, S I

    2002-01-01

    The angular dependence of the upper critical field has been investigated in a wide range of temperatures in very high-quality Bi sub 2 Sr sub 2 CuO sub 6 sub + subdelta single crystals with critical temperature approx = 9 K in magnetic fields up to 28 T. Although the typical value of the normal state resistivity ratio approx = 10 sup 4 , the anisotropy ratio of the upper critical fields is much smaller. A model is proposed based on a strong anisotropy and a small transparency between superconducting layers

  7. Peak-effect and angular hysteresis in Jc(H, θ) dependencies for YBa2Cu3O7-δ epitaxial films

    Science.gov (United States)

    Pan, V. M.; Pozigun, S. A.; Cherpak, Yu V.; Komashko, V. A.; Kasatkin, A. L.; Pashitskii, E. A.; Semenov, A. V.; Pan, A. V.

    2006-06-01

    New phenomena - peak-effect and angular hysteresis - in field/angle Jc(H, θ) dependencies are detected for YBCO epitaxial films at moderate dc magnetic fields H parallel to the film. Films (300-350 nm thick) are deposited by off-axis dc magnetron sputtering onto rcut sapphire substrate buffered with CeO2. Surface roughness (peak-to-valley) determined by AFM does not exceed 2 nm. Jc(H, θ)-curves are measured by low-frequency ac magnetic susceptibility and four-probe transport technique. Jc(H) at H∥ab-plane for the most smooth films reveal dome-shape enhancement of Jc(up to 10 p.c.) above Jc(0) value, starting from the field H* ascribed to the first critical field Hc1 of thin film. Jc(H)-plots at H∥c-axis with a plateau at low fields followed by monotonic fall-down are consistent to our model of vortex lattice depinning from the out-of-plane linear defect network (growth-induced edge dislocations). Field dependencies of Jc at arbitrary inclination angles may be recalculated from Jc(H, θ = 0) and Jc(H, θ = π/2), assuming independent effects of normal Hcosθ and parallel Hsinθ field components on Jc. Angle Jc(θ)-dependencies evolution with H is shown to be consistent with dominant mechanism of pinning on edge dislocations. The most surprizing feature of this evolution is emergence of the peak in Jc(θ)-dependence for H∥c-direction, becoming observable only above threshold magnetic field Hp dependent on film thickness and surface roughness. Angular hysteresis in Jc(H, θ) dependence is detected for magnetic field directions close to H∥ab-plane. This hysteresis is sensitive to magnetic/angular pre-history and together with observed peak-effect at H∥ab-plane can be understood by account for surface (and/or geometrical) barrier as additional pinning source for Abrikosov vortices.

  8. Flat magnetic exchange springs as mechanism for additional magnetoresistance in magnetic nanoisland arrays

    International Nuclear Information System (INIS)

    Boltaev, A.P.; Pudonin, F.A.; Sherstnev, I.A.; Egorov, D.A.; Kozmin, A.M.

    2017-01-01

    Process of magnetization and magnetoresistance have been studied in nanoisland bilayer systems of FeNi-Co. Hysteresis loops show characteristic features (steps) most clearly observed in certain orientations of the sample in a magnetic field. To explain these features the concept of flat magnetic exchange spring has been introduced for nanoisland bilayers. It has been proposed that additional magnetoresistance can be the result of spin-dependent scattering of electrons in the area of flat magnetic exchange spring. Magnetoresistance studies of bilayer systems has shown that additional magnetoresistance occurs at the same magnetic fields as steps on hysteresis loops. - Highlights: • Metallic FeNi-Co bilayers are studied. • FeNi and Co layers magnetize independently. • Concept of flat spin spring is proposed. • Additional magnetoresistance occurs in intermediate magnetic fields.

  9. Flat magnetic exchange springs as mechanism for additional magnetoresistance in magnetic nanoisland arrays

    Energy Technology Data Exchange (ETDEWEB)

    Boltaev, A.P.; Pudonin, F.A. [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospekt 53, 119991 Moscow (Russian Federation); Sherstnev, I.A., E-mail: sherstnev@lebedev.ru [P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospekt 53, 119991 Moscow (Russian Federation); Egorov, D.A. [National Research Nuclear University MEPhI, Kashirskoe shosse 31, 115409 Moscow (Russian Federation); Kozmin, A.M. [National Research University of Electronic Technology, Shokin Square, 1, Zelenograd, 124482 Moscow (Russian Federation)

    2017-04-15

    Process of magnetization and magnetoresistance have been studied in nanoisland bilayer systems of FeNi-Co. Hysteresis loops show characteristic features (steps) most clearly observed in certain orientations of the sample in a magnetic field. To explain these features the concept of flat magnetic exchange spring has been introduced for nanoisland bilayers. It has been proposed that additional magnetoresistance can be the result of spin-dependent scattering of electrons in the area of flat magnetic exchange spring. Magnetoresistance studies of bilayer systems has shown that additional magnetoresistance occurs at the same magnetic fields as steps on hysteresis loops. - Highlights: • Metallic FeNi-Co bilayers are studied. • FeNi and Co layers magnetize independently. • Concept of flat spin spring is proposed. • Additional magnetoresistance occurs in intermediate magnetic fields.

  10. 3000% high-field magnetoresistance in super-lattices of CoFe nanoparticles

    International Nuclear Information System (INIS)

    Tan, Reasmey P.; Carrey, Julian; Respaud, Marc; Desvaux, Celine; Renaud, Philippe; Chaudret, Bruno

    2008-01-01

    We report on magnetotransport measurements on millimeter-large super-lattices of CoFe nanoparticles surrounded by an organic layer. Electrical properties are typical of Coulomb blockade in three-dimensional arrays of nanoparticles. A large high-field magnetoresistance, reaching up to 3000%, is measured between 1.8 and 10 K. This exceeds by two orders of magnitude magnetoresistance values generally measured in arrays of 3d transition metal ferromagnetic nanoparticles. The magnetoresistance amplitude scales with the magnetic field/temperature ratio and displays an unusual exponential dependency with the applied voltage. The magnetoresistance abruptly disappears below 1.8 K. We propose that the magnetoresistance is due to some individual paramagnetic moments localized between the metallic cores of the nanoparticles, the origin of which is discussed

  11. Spin Hall magnetoresistance in antiferromagnet/normal metal bilayers

    KAUST Repository

    Manchon, Aurelien

    2017-01-01

    We investigate the emergence of spin Hall magnetoresistance in a magnetic bilayer composed of a normal metal adjacent to an antiferromagnet. Based on a recently derived drift diffusion equation, we show that the resistance of the bilayer depends on the relative angle between the direction transverse to the current flow and the Néel order parameter. While this effect presents striking similarities with the spin Hall magnetoresistance recently reported in ferromagnetic bilayers, its physical origin is attributed to the anisotropic spin relaxation of itinerant spins in the antiferromagnet.

  12. Linear negative magnetoresistance in two-dimensional Lorentz gases

    Science.gov (United States)

    Schluck, J.; Hund, M.; Heckenthaler, T.; Heinzel, T.; Siboni, N. H.; Horbach, J.; Pierz, K.; Schumacher, H. W.; Kazazis, D.; Gennser, U.; Mailly, D.

    2018-03-01

    Two-dimensional Lorentz gases formed by obstacles in the shape of circles, squares, and retroreflectors are reported to show a pronounced linear negative magnetoresistance at small magnetic fields. For circular obstacles at low number densities, our results agree with the predictions of a model based on classical retroreflection. In extension to the existing theoretical models, we find that the normalized magnetoresistance slope depends on the obstacle shape and increases as the number density of the obstacles is increased. The peaks are furthermore suppressed by in-plane magnetic fields as well as by elevated temperatures. These results suggest that classical retroreflection can form a significant contribution to the magnetoresistivity of two-dimensional Lorentz gases, while contributions from weak localization cannot be excluded, in particular for large obstacle densities.

  13. Anisotropic magnetoresistance in a Fermi glass

    International Nuclear Information System (INIS)

    Ovadyahu, Z.; Physics Department, Ben-Gurion University of the Negev, Beer-Sheva, Israel 84120)

    1986-01-01

    Insulating thin films of indium oxide exhibit negative, anisotropic magnetoresistance. The systematics of these results imply that the magnetoresistance mechanism may give different weight to the distribution of the localization lengths than that given by the hopping conductivity

  14. A novel approach for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of gallium and mercury metals

    International Nuclear Information System (INIS)

    Ogita, M.; Nakao, M.; Singh, C.D.; Mogi, I.; Awaji, S.

    2004-01-01

    An AC-DC method has been proposed for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of Ga and Hg metals. In low magnetic field Hall signal in solid state is proportional to magnetic field B, while in liquid state Hall signal is affected by magnetoresistance effect. It has been found that magnetoresistance has a B 2 dependence on magnetic field and affects the Hall signal. In high magnetic field, the Hall effect in liquid state is affected by a very large magnetoresistance effect compared in solid state. The magnetoresistance effect in liquid state is higher than solid state

  15. Rotational dependence of the proton-transfer reaction HBr+ + CO2-->HOCO+ + Br. I. Energy versus angular momentum effects.

    Science.gov (United States)

    Paetow, Lisa; Unger, Franziska; Beichel, Witali; Frenking, Gernot; Weitzel, Karl-Michael

    2010-05-07

    Cross sections for the endothermic proton-transfer reactions of rotationally state-selected HBr(+) and DBr(+) ions with CO(2) were measured in a guided ion beam apparatus in order to determine the influence of rotational excitation and collision energy in the center of mass (c.m.) system on the cross section. Ab initio calculations were performed to obtain energetic information about reactants, intermediates, and products. In the experiment HBr(+) and DBr(+) ions were prepared with the same mean rotational quantum number but different mean rotational energies as the rotational constants differ by about a factor of two. The mean rotational energy was varied from 1.4 to 66.3 meV for HBr(+) and from 0.7 to 43.0 meV for DBr(+). Collision energies (E(c.m.)) ranged from 0.32 to 1.00 eV. Under all conditions considered, an increase in the rotational excitation leads to a decrease in the cross section for both reactions. However, the effect is more pronounced for the higher collision energies. For E(c.m.)=1.00 and 0.85 eV; a comparison between the results for HBr(+) and DBr(+) indicates that the cross section is dominated by effects of rotational energy rather than angular momentum. For lower collision energies the cross sections for the deuteron transfer and the proton transfer are in best agreement if not compared for the same c.m. collision energy but for the same value of the difference between the collision energy and the reaction enthalpy.

  16. Determinations of the angular and energy dependence of hard constituent scattering from $\\pi^{0}$ pair events at the CERN Intersecting Storage Rings

    CERN Document Server

    Angelis, A L S; Blumenfeld, B; Camilleri, L L; Chapin, T J; Cool, R L; del Papa, C; Di Lella, L; Dimcovski, Zlatomir; Hollebeek, R J; Lederman, Leon Max; Levinthal, D A; Linnemann, J T; Newman, C B; Phinney, N; Pope, B G; Pordes, S H; Rothenberg, A F; Rusack, R W; Segar, A M; Singh-Sidhu, J; Smith, A M; Tannenbaum, M J; Vidal, R A; Wallace-Hadrill, J S; Yelton, J M; Young, K K

    1982-01-01

    The authors present data on proton-proton collisions, obtained at the CERN Intersecting Storage Rings, in which two roughly back-to-back\\pi^{0}s of high transverse momentum (p/sub T/) were produced. The angular distribution of the dipion axis relative to the collision axis is found to be independent of both the effective mass m of the dipion system and the centre-of-mass energy \\sqrt{s} of the proton- proton collision. The cross-sections d sigma /dm at the two values of \\sqrt{s} satisfy a scaling law of the form d sigma /dm=G(x)/m/sup n/, where x=m(\\pi^{0},\\pi^{0})/ \\sqrt{s} and n =6.5+or-0.5. They show from the data that the leading\\pi^{0} carries most of the momentum of the scattered parton. Given this fact, the axis of the dipion system follows closely the direction of the scattered constituents, and they exploit this to determine the angular dependence of the hard-scattering subprocess. They also compare our data with the lowest order QCD predictions using structure functions as determined in deep-inelast...

  17. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  18. Structural vs electronic origin of renormalized band widths in TTF-TCNQ: An angular dependent NEXAFS study

    DEFF Research Database (Denmark)

    Sing, M; Meyer, J; Hoinkis, M

    2007-01-01

    We have performed angle-dependent near-edge x-ray absorption fine structure measurements in the Auger electron yield mode on the correlated quasi-one-dimensional organic conductor tetrathiafulvalene-tetracyanoquinodimethane (TTF-TCNQ) in order to determine the orientation of the molecules in the ...

  19. Angular-domain scattering interferometry.

    Science.gov (United States)

    Shipp, Dustin W; Qian, Ruobing; Berger, Andrew J

    2013-11-15

    We present an angular-scattering optical method that is capable of measuring the mean size of scatterers in static ensembles within a field of view less than 20 μm in diameter. Using interferometry, the method overcomes the inability of intensity-based models to tolerate the large speckle grains associated with such small illumination areas. By first estimating each scatterer's location, the method can model between-scatterer interference as well as traditional single-particle Mie scattering. Direct angular-domain measurements provide finer angular resolution than digitally transformed image-plane recordings. This increases sensitivity to size-dependent scattering features, enabling more robust size estimates. The sensitivity of these angular-scattering measurements to various sizes of polystyrene beads is demonstrated. Interferometry also allows recovery of the full complex scattered field, including a size-dependent phase profile in the angular-scattering pattern.

  20. A strategy to reduce the angular dependence of a dye-sensitized solar cell by coupling to a TiO2 nanotube photonic crystal

    Science.gov (United States)

    Guo, Min; Xie, Keyu; Liu, Xiaolin; Wang, Yu; Zhou, Limin; Huang, Haitao

    2014-10-01

    Almost all types of solar cells suffer from a decreased power output when the incident light is tilted away from normal since the incident intensity generally follows a cosine law of the incident angle. Making use of the blue shift nature of the Bragg position of a TiO2 nanotube photonic crystal (NT PC) under oblique incidence, we demonstrate experimentally that the use of the NT PC can partially compensate the cosine power loss of a dye-sensitized solar cell (DSSC). The strategy used here is to purposely choose the Bragg position of the NT PC to be at the longer wavelength side of the dye absorption peak. When the incident light is tilted, the blue shift of the Bragg position results in more overlap with the dye absorption peak, generating a higher efficiency that partially compensates the reduced photon flux due to light inclination. Moreover, the unique structure of the vertically aligned TiO2 nanotubes contributes an additional scattering effect when the incident light is tilted. As a result, the power output of a DSSC coupled with the NT PC layer shows a much flatter angular dependence than a DSSC without the NT PC. At all the incident angles, the DSSC coupled with the NT PC layer also shows a higher power conversion efficiency than the one without. The concept of using NT PC to mitigate the angular dependence of DSSCs can be easily extended to many other optoelectronic devices that are irradiance sensitive.Almost all types of solar cells suffer from a decreased power output when the incident light is tilted away from normal since the incident intensity generally follows a cosine law of the incident angle. Making use of the blue shift nature of the Bragg position of a TiO2 nanotube photonic crystal (NT PC) under oblique incidence, we demonstrate experimentally that the use of the NT PC can partially compensate the cosine power loss of a dye-sensitized solar cell (DSSC). The strategy used here is to purposely choose the Bragg position of the NT PC to be at the

  1. Electrical properties and granular magnetoresistance in nanomanganite

    Directory of Open Access Journals (Sweden)

    َAli Rostamnejadi

    2017-05-01

    Full Text Available In this research single phaseLa0.7(Sr 1-xBax0.3MnO3(x =0, 0.1 , 0.2 , 0.3 nanomanganite with crystalline size of 18-28 nm have been prepared by sol gel method. The structural properties have been studied using X-ray diffraction spectra with its Rietveld analysis and scaning electron microscope images. The magnetic and elctrical properties have been investigated by measuring the ac magnetic susceptibility and resistivity in the presence of magnetic fields in the range of 0-20 kOe. The obtained results from ac magnetic susceptibility show that the Curie temperture of the samples are above room temperture. The results of resistivity show that the metal-insulator phase transition temperture of and compounds are below room temperture. The resistivity of the samples strongly decreases and their magnetoresistance almost linearly increases by incrasing the applied magnetic field at different tempertures. The value of magnetoresistance for compound is 10 % and 14 % at 275 K and 200 K, and for compound is 13 %  and 27 % at 275 K and 100 K, respectively which are suitable for magnetic field sensing applications. The magneto-transport properties of nanomanganite are described in terms of spin dependent scattering of charge carriers from grain boundaries and their spin dependent tunneling between grains. 

  2. Fission fragment angular momentum

    International Nuclear Information System (INIS)

    Frenne, D. De

    1991-01-01

    Most of the energy released in fission is converted into translational kinetic energy of the fragments. The remaining excitation energy will be distributed among neutrons and gammas. An important parameter characterizing the scission configuration is the primary angular momentum of the nascent fragments. Neutron emission is not expected to decrease the spin of the fragments by more than one unit of angular momentum and is as such of less importance in the determination of the initial fragment spins. Gamma emission is a suitable tool in studying initial fragment spins because the emission time, number, energy, and multipolarity of the gammas strongly depend on the value of the primary angular momentum. The main conclusions of experiments on gamma emission were that the initial angular momentum of the fragments is large compared to the ground state spin and oriented perpendicular to the fission axis. Most of the recent information concerning initial fragment spin distributions comes from the measurement of isomeric ratios for isomeric pairs produced in fission. Although in nearly every mass chain isomers are known, only a small number are suitable for initial fission fragment spin studies. Yield and half-life considerations strongly limit the number of candidates. This has the advantage that the behavior of a specific isomeric pair can be investigated for a number of fissioning systems at different excitation energies of the fragments and fissioning nuclei. Because most of the recent information on primary angular momenta comes from measurements of isomeric ratios, the global deexcitation process of the fragments and the calculation of the initial fragment spin distribution from measured isomeric ratios are discussed here. The most important results on primary angular momentum determinations are reviewed and some theoretical approaches are given. 45 refs., 7 figs., 2 tabs

  3. Recovery of oscillatory magneto-resistance in phase separated La0.3Pr0.4Ca0.3MnO3 epitaxial thin films

    International Nuclear Information System (INIS)

    Alagoz, H. S.; Jeon, J.; Mahmud, S. T.; Saber, M. M.; Chow, K. H.; Jung, J.; Prasad, B.; Egilmez, M.

    2013-01-01

    In-plane angular dependent magneto-resistance has been studied in La 0.3 Pr 0.4 Ca 0.3 MnO 3 (LPCMO) manganite thin films deposited on the (100) oriented NdGaO 3 , and (001) oriented SrTiO 3 and LaAlO 3 substrates. At temperatures where the electronic phase separation is the strongest, a metastable irreversible state exists in the films whose resistivity ρ attains a large time dependent value. The ρ decreases sharply with an increasing angle θ between the magnetic field and the current, and does not display an expected oscillatory cos 2 θ/sin 2 θ dependence for all films. The regular oscillations are recovered during repetitive sweeping of θ between 0° and 180°. We discuss possible factors that could produce these unusual changes in the resistivity

  4. Anisotropic magnetoresistance and thermodynamic fluctuations in high-temperature superconductors

    International Nuclear Information System (INIS)

    Heine, G.

    1999-05-01

    Measurements of the in-plane and out-of-plane resistivity and the transverse and longitudinal in-plane and out-of-plane magnetoresistance above T, are reported in the high-temperature superconductors Bi2Sr2CaCu208+' and YBa2CU307 b . The carrier concentration of the Bi2Sr2CaCu208+' single crystals covers a broad range of the phase diagram from the slightly under doped to the moderately over doped region. The doping concentration of the thin films ranges from strongly under doped to optimally doped. The in-plane resistivities obey a metallic-like temperature dependence with a positive magnetoresistance in the transverse and the longitudinal orientation of the magnetic field. The out-of-plane resistivities show an activated behavior above T, with a metallic region at higher temperatures and negative magnetoresistance. The data were analyzed in the framework of a model for superconducting order parameter fluctuations. The positive in-plane magnetoresistance of the highly anisotropic Bi2Sr2CaCu208+x single crystals is interpreted as the suppression of the fluctuation-conductivity enhancement including orbital and spin contributions, whereas the negative magnetoresistance arises from the reduction of the fluctuation-induced pseudogap in the single-electron density-of-states by the magnetic field. For higher temperatures a transition to the normal-state magnetoresistance occurs for the in-plane transport. In the less anisotropic YBa2CU307 b thin films the positive out-of-plane magnetoresistance near T, changes sign to a negative magnetoresistance at higher temperatures. This behavior is also consistent with predictions from the theory of thermodynamic order-parameter fluctuations. The agreement of the fluctuation theory with the experimental findings is excellent for samples from the over doped side of the phase diagram, but deteriorate with decreasing carrier concentration. This behavior is interpreted by the dominating d-wave symmetry of the superconducting order

  5. Negative magnetoresistance in perpendicular of the superlattices axis weak magnetic field at scattering of impurity ions

    International Nuclear Information System (INIS)

    Askerov, B. M.; Figarova, R.; Guseynov, G.I.

    2012-01-01

    Full Text : The transverse magnetoresistance in superlattices with the cosine dispersion law of conduction electrons in a case, when a weak magnetic field in plane of layer at scattering of the charge carriers of impurity ions has been studied. It has been shown that in a quasi-two-dimensional case the magnetoresistance was positive, while in a quasi-three-dimensional case can become negative depending of a degree of mini-band filling. Such behavior of magnetoresistance, apparently, has been related to presence in a mini-band of region with the negative effective mass

  6. Magnetoresistance stories of double perovskites

    Indian Academy of Sciences (India)

    Abstract. Tunnelling magnetoresistance (TMR) in polycrystalline double perovskites has been an important research topic for more than a decade now, where the nature of the insulating tunnel barrier is the core issue of debate. Other than the nonmagnetic grain boundaries as conventional tunnel barriers, intragrain ...

  7. Magnetoresistance stories of double perovskites

    Indian Academy of Sciences (India)

    2015-05-28

    May 28, 2015 ... Tunnelling magnetoresistance (TMR) in polycrystalline double perovskites has been an important research topic for more than a decade now, where the nature of the insulating tunnel barrier is the core issue of debate. Other than the nonmagnetic grain boundaries as conventional tunnel barriers, intragrain ...

  8. Angular dependence of J{sub c} for YBCO coated conductors at low temperature and very high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Xu, A; Jaroszynski, J J; Kametani, F; Chen, Z; Larbalestier, D C [Applied Superconductivity Center, National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310 (United States); Viouchkov, Y L [National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310 (United States); Chen, Y; Xie, Y; Selvamanickam, V, E-mail: aixiaxu@asc.magnet.fsu.ed [SuperPower Incorporated, 450 Duane Avenue, Schenectady, NY 12304 (United States)

    2010-01-15

    We present very high field angle dependent critical current density (J{sub c}) data for three recently obtained YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) coated conductors used in the construction of high field solenoids. We find that strongly correlated pins, such as BaZrO{sub 3} (BZO) nanorods, while yielding strong c-axis peaks at 77 K, produce almost no measurable contribution at 4 K. Raising the field from <5 to 30 T at 4 K causes a marked transition from a Ginzburg-Landau-like J{sub c}({theta}) at low fields to a marked cusp-like behavior at high fields. Transmission electron micrographs show that all samples contain a high density of stacking faults which strengthen the plane correlated pinning parallel to the ab planes produced by the intrinsic ab-plane pinning of the Cu-O charge reservoir layers.

  9. SU-E-T-44: Angular Dependence of Surface Dose Enhancement Measured On Several Inhomogeneities Using Radiochromic EBT3 Films

    Energy Technology Data Exchange (ETDEWEB)

    Jansen, A; Schoenfeld, A; Poppinga, D; Chofor, N; Poppe, B [University of Oldenburg, Oldenburg (Germany); Pius Hospital Oldenburg, Oldenburg (Germany)

    2014-06-01

    Purpose: The quantification of the relative surface dose enhancement in dependence on the angle of incidence and the atomic number Z of the surface material. Methods: Experiments were performed with slabs made of aluminum, titanium, copper, silver, dental gold and lead. The metal slabs with equal sizes of 1.0×8.0×8.8mm{sup 3} were embedded in an Octavius 4D phantom (PTW Freiburg, Germany). Radiochromic EBT3 films were used to measure the surface dose for angles of incidence ranging from 0° to 90°. The setup with the metals slabs at the isocenter was irradiated with acceleration voltages of 6MV and 10MV. Water reference measurements were taken under equal conditions. Results: The surface dose enhancement is highest for angles of incidence below 30° and drops significantly for higher. The surface dose enhancement produced by lead and dental gold at 6MV showed a peak of 65%. At 90°, the surface dose enhancement dropped to 15% for both materials. The surface dose enhancements for silver, copper, titanium and aluminum were 45%, 32%, 22% and 12% at 0°, respectively. At an angle of incidence of 80°, the values dropped to 22%, 18%, 12% und 6%. The values for 10MV were very similar. Lead and dental gold showed peaks of 65% und 60%. Their values dropped to 18% at an angle of 90°. The surface dose enhancements for silver, copper, titanium and aluminum were 45%, 30%, 20% and 8% at 0°. At 80° the values dropped to 30%, 20%, 12% and 5%. A dependence of the magnitude of the surface dose enhancement on the atomic number of the surface material can be seen, which is in consistence with literature. Conclusion: The results show that the surface dose enhancements near implant materials with high Z-values should be taken into consideration in radio therapy, even when the angle of incidence is flat.

  10. SU-E-T-44: Angular Dependence of Surface Dose Enhancement Measured On Several Inhomogeneities Using Radiochromic EBT3 Films

    International Nuclear Information System (INIS)

    Jansen, A; Schoenfeld, A; Poppinga, D; Chofor, N; Poppe, B

    2014-01-01

    Purpose: The quantification of the relative surface dose enhancement in dependence on the angle of incidence and the atomic number Z of the surface material. Methods: Experiments were performed with slabs made of aluminum, titanium, copper, silver, dental gold and lead. The metal slabs with equal sizes of 1.0×8.0×8.8mm 3 were embedded in an Octavius 4D phantom (PTW Freiburg, Germany). Radiochromic EBT3 films were used to measure the surface dose for angles of incidence ranging from 0° to 90°. The setup with the metals slabs at the isocenter was irradiated with acceleration voltages of 6MV and 10MV. Water reference measurements were taken under equal conditions. Results: The surface dose enhancement is highest for angles of incidence below 30° and drops significantly for higher. The surface dose enhancement produced by lead and dental gold at 6MV showed a peak of 65%. At 90°, the surface dose enhancement dropped to 15% for both materials. The surface dose enhancements for silver, copper, titanium and aluminum were 45%, 32%, 22% and 12% at 0°, respectively. At an angle of incidence of 80°, the values dropped to 22%, 18%, 12% und 6%. The values for 10MV were very similar. Lead and dental gold showed peaks of 65% und 60%. Their values dropped to 18% at an angle of 90°. The surface dose enhancements for silver, copper, titanium and aluminum were 45%, 30%, 20% and 8% at 0°. At 80° the values dropped to 30%, 20%, 12% and 5%. A dependence of the magnitude of the surface dose enhancement on the atomic number of the surface material can be seen, which is in consistence with literature. Conclusion: The results show that the surface dose enhancements near implant materials with high Z-values should be taken into consideration in radio therapy, even when the angle of incidence is flat

  11. LHCb: Tagged time-dependent angular analysis of $B^0_s \\to J/\\psi K^+ K^-$ at LHCb

    CERN Multimedia

    Syropoulos, V

    2013-01-01

    The time-dependent CP-violating asymmetry in $B^0_s\\to J/\\psi K^{+}K^{-}$ decays is measured using $1.0^{-1}$ of $pp$ of collisions at $\\sqrt{s}=7$ TeV collected with the LHCb detector. The decay time distribution of $B^0_s\\to J/\\psi K^{+}K^{-}$ is characterized by the decay widths $\\Gamma_{\\mathrm{H}}$ and $\\Gamma_{\\mathrm{L}}$ of the heavy and light mass eigenstates of the $B^0_s - \\bar{B^0_s}$ system and by a CP-violating phase $\\phi_s$. In a sample of approximately 27600 $B^0_s\\to J/\\psi K^{+}K^{-}$ events we measure $\\phi_s \\: = \\: 0.068 \\: \\pm \\: 0.091 \\: \\text{(stat)} \\: \\pm \\: 0.011 \\: \\text{(syst)} \\: \\text{rad}$. We also find an average $B^0_s$ decay width $\\Gamma_s \\equiv (\\Gamma_{\\mathrm{L}}+\\Gamma_{\\mathrm{H}})/2 \\: = \\: 0.671 \\: \\pm \\: 0.005 \\: \\text{(stat)} \\: \\pm \\: 0.006 \\: \\text{(syst)} \\: ps^{-1}$ and a decay width difference $\\Delta \\Gamma_s \\equiv \\Gamma_{\\mathrm{L}} - \\Gamma_{\\mathrm{H}} \\: = \\: 0.100 \\: \\pm \\: 0.016 \\: \\text{(stat)} \\: \\pm \\: 0.003 \\: \\text{(syst)} \\: ps^...

  12. Angular-Dependent Phase Factor of Shubnikov-de Haas Oscillations in the Dirac Semimetal Cd3As2

    Science.gov (United States)

    Xiang, Z. J.; Zhao, D.; Jin, Z.; Shang, C.; Ma, L. K.; Ye, G. J.; Lei, B.; Wu, T.; Xia, Z. C.; Chen, X. H.

    2015-11-01

    We measure the magnetotransport properties of the three-dimensional Dirac semimetal Cd3As2 single crystal under magnetic fields up to 36 T. Shubnikov-de Haas (SdH) oscillations are clearly resolved and the n =1 Landau level is reached. A detailed analysis on the intercept of the Landau index plot reveals a significant dependence of the SdH phase factor on the orientation of the applied magnetic field. When the magnetic field is applied in the [001] direction, i.e., along the fourfold screw axis of the tetragonal crystal structure, a nontrivial π Berry phase, as predicted for the Dirac fermions, is observed. However, in a magnetic field tilted away from the [001] direction, the π Berry phase is evidently reduced, and a considerable enhancement of the effective mass is also revealed. Our observations demonstrate that the Dirac dispersion in Cd3As2 is effectively modified in a tilted magnetic field, whereas the preserved π Berry phase in a magnetic field along the [001] direction can be related to the realization of the Weyl fermions. The sudden change of the SdH phase also indicates a possible topological phase transition induced by the symmetry-breaking effect.

  13. Magnetoresistance in amorphous NdFeB/FeB compositionally modulated multilayers

    International Nuclear Information System (INIS)

    Peral, G.; Briones, F.; Vicent, J.L.

    1991-01-01

    Resistance measurements have been done in amorphous Nd 12 Fe 80 B 8 sputtered films and in amorphous sputtered Nd 26 Fe 68 B 6 /Fe 92 B 8 multilayers between 6 and 150 K with applied magnetic field parallel (LMR) and perpendicular (TMR) up to 7 T. The samples were grown by dc triode sputtering, with nominal unequal (2:1) layer thicknesses. The layered character of the samples have been tested by x-ray diffraction. Longitudinal magnetoresistance (LMR) is positive and transverse magnetoresistance (TMR) is negative. The magnetoresistance values are higher than in amorphous ferromagnets, and multilayering of these alloys produces much larger magnetoresistance values than either alloy alone and there is a strong dependence on the multilayer wavelength. The MR shows a weak temperature dependence in the temperature interval that was investigated

  14. Evolution and sign control of square-wave-like anisotropic magneto-resistance in spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3}/LaAlO{sub 3}(001) manganite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Alagoz, H. S., E-mail: alagoz@ualberta.ca; Jeon, J.; Keating, S.; Chow, K. H., E-mail: khchow@ualberta.ca; Jung, J., E-mail: jjung@ualberta.ca [Department of Physics, University of Alberta, Edmonton, Alberta T6G 2E1 (Canada)

    2016-04-14

    We investigated magneto-transport properties of a compressively strained spatially confined La{sub 0.3}Pr{sub 0.4}Ca{sub 0.3}MnO{sub 3} (LPCMO) thin film micro-bridge deposited on LaAlO{sub 3}. Angular dependence of the magneto-resistance R(θ) of this bridge, where θ is the angle between the magnetic field and the current directions in the film plane, exhibits sharp positive and negative percolation jumps near T{sub MIT}. The sign and the magnitude of these jumps can be tuned using the magnetic field. Such behavior has not been observed in LPCMO micro-bridges subjected to tensile strain, indicating a correlation between the type of the lattice strain, the distribution of electronic domains, and the anisotropic magneto-resistance in spatially confined manganite systems.

  15. Variation of magnetoresistive sensitivity maps of patterned giant magnetoresistance sensors

    International Nuclear Information System (INIS)

    Foss-Schroeder, Sheryl; van Ek, Johannes; Song, Dian; Louder, Darrell; Al-Jumaily, Ghanim; Ryan, Pat; Prater, Craig; Hachfeld, Ed; Wilson, Matt; Tench, Robert

    2001-01-01

    A scanning probe microscope which combines probe contacts for the supply of current with a magnetic force microscope (MFM) for fully automated imaging of electrically active, patterned sensor-like devices across a wafer was developed. This was used for magnetoresistive sensitivity mapping (MSM) of giant magnetoresistive sensors with different stabilization schemes. Multiple measurements of sensors showed that the MSM images were very repeatable. The complex image patterns varied significantly from sensor to sensor across a wafer. With MFM tips magnetized perpendicular to the ferromagnetic films in the sensor, MSM signals at the top and bottom of the sensor were significantly more intense than signals at the sensor interior. Results from micromagnetic calculations were found to be consistent with the experimental observations. [copyright] 2001 American Institute of Physics

  16. Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi

    OpenAIRE

    Casper, Frederick; Felser, Claudia

    2007-01-01

    The semiconducting half-Heulser compound DyNiBi shows a negative giant magnetoresistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal-insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase.

  17. Study of CP Symmetry Violation in the Charmonium-K*(892) Channel By a Complete Time Dependent Angular Analysis (BaBar Experiment)

    Energy Technology Data Exchange (ETDEWEB)

    T' Jampens, Stephane; /Orsay

    2006-09-18

    This thesis presents the full-angular time-dependent analysis of the vector-vector channel B{sub d}{sup 0} {yields} J/{psi}(K{sub S}{sup 0}{pi}{sup 0})*{sup 0}. After a review of the CP violation in the B meson system, the phenomenology of the charmonium-K*(892) channels is exposed. The method for the measurement of the transversity amplitudes of the B {yields} J/{psi}K*(892), based on a pseudo-likelihood method, is then exposed. The results from a 81.9 fb{sup -1} of collected data by the BABAR detector at the {Upsilon}(4S) resonance peak are |A{sub 0}|{sup 2} = 0.565 {+-} 0.011 {+-} 0.004, |A{sub {parallel}}|{sup 2} = 0.206 {+-} 0.016 {+-} 0.007, |A{sub {perpendicular}}|{sup 2} = 0.228 {+-} 0.016 {+-} 0.007, {delta}{sub {parallel}} = -2.766 {+-} 0.105 {+-} 0.040 and {delta}{sub {perpendicular}} = 2.935 {+-} 0.067 {+-} 0.040. Note that ({delta}{sub {parallel}}, {delta}{sub {perpendicular}}) {yields} (-{delta}{sub {parallel}}, {pi} - {delta}{sub {perpendicular}}) is also a solution. The strong phases {delta}{sub {parallel}} and {delta}{sub {perpendicular}} are at {approx}> 3{sigma} from {+-}{pi}, signing the presence of final state interactions and the breakdown of the factorization hypothesis. The forward-backward analysis of the K{pi} mass spectrum revealed the presence of a coherent S-wave interfering with the K*(892). It is the first evidence of this wave in the K{pi} system coming from a B meson. The particularity of the B{sub d}{sup 0} {yields} J/{psi}(K{sub S}{sup 0}{pi}{sup 0})*{sup 0} channel is to have a time-dependent but also an angular distribution which allows to measure sin 2{beta} but also cos2{beta}. The results from an unbinned maximum likelihood fit are sin 2{beta} = -0.10 {+-} 0.57 {+-} 0.14 and cos 2{beta} = 3.32{sub -0.96}{sup +0.76} {+-} 0.27 with the transversity amplitudes fixed to the values given above. The other solution for the strong phases flips the sign of cos 2{beta}. Theoretical considerations based on the s-quark helicity

  18. Colossal Magnetoresistance Manganites and Related Prototype Devices

    OpenAIRE

    Liu, Yukuai; Yin, Yuewei; Li, Xiaoguang

    2013-01-01

    We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb:SrTiO3 pn junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions ...

  19. Magnetoresistance of tungsten thin wafer at the multichannel surface scattering of conduction electrons

    International Nuclear Information System (INIS)

    Lutsishin, P.P.; Nakhodkin, T.N.

    1982-01-01

    The magnetoresistance of tungsten thin wafer with the (110) surface was studied at the adsorption of tungsten dioxide. The method of low-energy electron diffraction was used to study the symmetry of ordered surface structures. Using the method of the magnetoresistance measurement the character of the scattering of conduction electrons was investigated. THe dependence of magnetoresistance on the surface concentration of tungsten dioxide correlated w1th the structure of the surface layer of atoms, what was explained with allowance for diffraction of conduction electrons at the metal boundary. The magnetoresistance maximum for the (2x2) structure, which characterised decrease in surface conduction under the conditions of static skin effect, was explained by multichannel mirror reflection with the recombinations of electron and ho.le sections of Fermi Surface

  20. Ambiguity-Free Measurement of cos2beta: Time-Intergrated and Time-Dependent Angular Analyses of B to J/psi K pi

    Energy Technology Data Exchange (ETDEWEB)

    Aubert, B.

    2004-11-02

    We present results on B {yields} J/{psi} K{pi} decays using e{sup +}e{sup -} annihilation data collected with the BABAR detector at the {Upsilon}(4S) resonance. The detector is located at the PEP-II asymmetric-energy storage ring facility at the Stanford Linear Accelerator Center. Using approximately 88 million B{bar B} pairs, we measure the decay amplitudes for the flavor eigenmodes and observe strong-phase differences indicative of final-state interactions with a significance of 7.6 standard deviations. We use the interference between the K{pi} S-wave and P-wave amplitudes in the region of the K*(892) to resolve the ambiguity in the determination of these strong phases. We then perform an ambiguity-free measurement of cos 2{beta} using the angular and time-dependent asymmetry in B {yields} J/{psi} K*{sup 0} (K{sub S}{sup 0}{pi}{sup 0}) decays. With sin2{beta} fixed at its measured value and cos2{beta} treated as an independent parameter, we find cos 2{beta} = 2.72{sub -0.79}{sup +0.50}(stat) {+-} 0.27(syst), determining the sign of cos 2{beta} to be positive at 86% CL.

  1. Angular and radial dependence of the energy response factor for LIF-TLD micro-rods in 125L permanent implant source.

    Science.gov (United States)

    Mobit, Paul; Badragan, Iulian

    2006-01-01

    EGSnrc Monte Carlo simulations were used to calculate the angular and radial dependence of the energy response factor for LiF-thermoluminescence dosemeters (TLDs) irradiated with a commercially available (125)I permanent brachytherapy source. The LiF-TLDs were modelled as cylindrical micro-rods of length 6 mm and with diameters of 1 mm and 5 mm. The results show that for a LiF-TLD micro-rod of 1 mm diameter, the energy response relative to (60)Co gamma rays is 1.406 +/- 0.3% for a polar angle of 90 degrees and radial distance of 1.0 cm. When the diameter of the micro-rod is increased from 1 to 5 mm, the energy response decreases to 1.32 +/- 0.3% at the same point. The variation with position of the energy response factor is not >5% in a 6 cm x 6 cm x 6 cm calculation grid for the 5 mm diameter micro-rod. The results show that there is a change in the photon spectrum with angle and radial distance, which causes the variation of the energy response.

  2. Evolution of the spin hall magnetoresistance in Cr2O3/Pt bilayers close to the Néel temperature

    Science.gov (United States)

    Schlitz, Richard; Kosub, Tobias; Thomas, Andy; Fabretti, Savio; Nielsch, Kornelius; Makarov, Denys; Goennenwein, Sebastian T. B.

    2018-03-01

    We study the evolution of magnetoresistance with temperature in thin film bilayers consisting of platinum and antiferromagnet Cr2O3 with its easy axis out of the plane. We vary the temperature from 20 °C to 60 °C, in the vicinity of the Néel temperature of Cr2O3 of approximately 37 °C. The magnetoresistive response is recorded during rotations of the external magnetic field in three mutually orthogonal planes. A large magnetoresistance having a symmetry consistent with a positive spin Hall magnetoresistance is observed in the paramagnetic phase of Cr2O3, which however vanishes when cooling to below the Néel temperature. Compared to analogous experiments in a Gd3Ga5O12/Pt bilayer, we conclude that a paramagnetic moment in the insulator induced by an applied magnetic field is not sufficient to explain the observed magnetoresistance. We speculate that the type of magnetic moment at the interface qualitatively impacts the spin angular momentum transfer, with the 3d moments of Cr sinking angular momentum much more efficiently as compared to the more localized 4f moments of Gd.

  3. Tunnel magnetoresistance in double spin filter junctions

    International Nuclear Information System (INIS)

    Saffarzadeh, Alireza

    2003-01-01

    We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

  4. Modeling the planar configuration of extraordinary magnetoresistance

    International Nuclear Information System (INIS)

    El-Ahmar, S; Pozniak, A A

    2015-01-01

    Recently the planar version of the extraordinary magnetoresistance (EMR) magnetic field sensor has been constructed and verified in practice. Planar configuration of the EMR device gives many technological advantages, it is simpler than the classic and allows one to build the sensor using electric materials of the new type (such as graphene or topological insulators) much easier. In this work the planar configuration of the EMR sensor is investigated by performing computational simulations using the finite element method (FEM). The computational comparison of the planar and classic configurations of EMR is presented using three-dimensional models. Various variants of the geometry of EMR sensor components are pondered and compared in the planar and classic version. Size of the metal overlap is considered for sensor optimization as well as various semiconductor-metal contact resistance dependences of the EMR signal. Based on computational simulations, a method for optimal placement of electric terminals in a planar EMR device is proposed. (paper)

  5. Magnetoresistance effect in perovskite-like RCu3Mn4O12 (R - rare earth ion, Th)

    International Nuclear Information System (INIS)

    Lobanovskij, L.S.; Troyanchuk, I.O.; Trukhanov, S.V.; Pastushonok, S.N.; Pavlov, V.I.

    2003-01-01

    The study on the electric properties and magnetoresistance effect in the RCu 3 Mn 4 O 12 (where R is the rare-earth ion, Th) is carried out. It is established that all the compositions of the given series demonstrate the magnetoresistive effect, the value whereof at the liquid nitrogen temperature reaches 20% in the field 0.9 T. The increase in the magnetoresistance with the temperature decrease and high sensitivity to the weak magnetic fields at low temperatures indicate that this effect is intergranular. The peak of the magnetoresistance is identified near the Curie temperature (T C ). It is supposed that the degree of the magnetoresistance near the temperature of the magnetic ordering depends on the conditions of the samples synthesis and the effect of the intergranular interlayer on the transport properties of these compositions [ru

  6. Angular momentum projected semiclassics

    International Nuclear Information System (INIS)

    Hasse, R.W.

    1986-10-01

    By using angular momentum projected plane waves as wave functions, we derive semiclassical expressions for the single-particle propagator, the partition function, the nonlocal density matrix, the single-particle density and the one particle- one hole level density for fixed angular momentum and fixed z-component or summed over the z-components. Other quantities can be deduced from the propagator. In coordinate space (r, r') the relevant quantities depend on vertical stroker - r 3 vertical stroke instead of vertical stroker - r'vertical stroke and in Wigner space (R, P) they become proportional to the angular momentum constraints δ(vertical strokeRxPvertical stroke/ℎ - l) and δ((RxP) z /ℎ - m). As applications we calculate the single-particle and one particle- one hole level densities for harmonic oscillator and Hill-Wheeler box potentials and the imaginary part of the optical potential and its volume integral with an underlying harmonic oscillator potential and a zero range two-body interaction. (orig.)

  7. Angular Momentum in Fission

    Science.gov (United States)

    Gönnenwein, F.; Bunakov, V.; Dorvaux, O.; Gagarski, A.; Guseva, I.; Hanappe, F.; Kadmensky, S.; von Kalben, J.; Khlebnikov, S.; Kinnard, V.; Kopatch, Yu.; Mutterer, M.; Nesvizhevsky, V.; Petrov, G.; Prokhorova, E.; Rubchenya, V.; Sillanpää, M.; Simpson, G.; Sokolov, V.; Soldner, T.; Stuttgé, L.; Tiourine, G.; Trzaska, W.; Tsekhanovich, I.; Wagemans, C.; Wollersheim, H.-J.; Zavarukhina, T.; Zimmer, O.

    2008-04-01

    Three novel experiments in spontaneous and thermal neutron induced fission all with a bearing on angular momentum in fission are reviewed. In the first experiment it was observed that, in the reaction 235U(n, f) with incident polarized cold neutrons, the nucleus undergoing scission is rotating. This was inferred from the shift in angular distributions of ternary particles being dependent on the orientation of neutron spin. In the second study the properties of the angular momentum of spherical fission fragments was investigated. Current theories trace the spin of fragments to their deformations allowing for collective rotational vibrations at scission. However, in particular the spherical 132Te isotope exhibits a large spin at variance with theory. Exploiting the specific properties of cold deformed fission it could be proven that, for 132Te, single particle excitations instead of collective modes are responsible for the large spin observed. In a third project a pilot study was exploring the possibility to search for an evaporation of neutrons from fragments being anisotropic in their own cm-system. Due to fragment spin this anisotropy is claimed since decades to exist. It was so far never observed. A scheme has been devised and tested were triple coincidences between a fragment and two neutrons are evaluated in a way to bring the cm-anisotropy into the foreground while getting rid of the kinematical anisotropy in the lab-system due to evaporation from moving fragments. The test was run for spontaneous fission of 252Cf.

  8. Magnetoresistance in La0.7Ca0.3MnO3-YBa2Cu3O7 F/S/F trilayers

    International Nuclear Information System (INIS)

    Pena, V.; Visani, C.; Bruno, F.; Garcia-Barriocanal, J.; Arias, D.; Rivera, A.; Sefrioui, Z.; Leon, C.; Te Velthuis, S.G.E.; Hoffmann, A.; Nemes, N.; Garcia-Hernandez, M.; Martinez, J.L.; Santamaria, J.

    2007-01-01

    We report large magnetoresistance in ferromagnet/superconductor/ferromagnet structures made of La 0.7 Ca 0.3 MnO 3 and YBa 2 Cu 3 O 7 at temperatures along the resistive transition. We find that the magnetoresistance phenomenon is independent on the orientation of electric current versus field. Furthermore, the effect is also independent on the sweep rate of the magnetic field. This excludes interpretations in terms of spontaneous vortices or anisotropic magnetoresistance of the ferromagnetic layers and supports the view that the magnetoresistance phenomenon originates at the spin-dependent transport of quasiparticles transmitted from the ferromagnetic electrodes into the superconductor

  9. Rashba-Edelstein Magnetoresistance in Metallic Heterostructures.

    Science.gov (United States)

    Nakayama, Hiroyasu; Kanno, Yusuke; An, Hongyu; Tashiro, Takaharu; Haku, Satoshi; Nomura, Akiyo; Ando, Kazuya

    2016-09-09

    We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

  10. Spin polarized electron tunneling and magnetoresistance in molecular junctions.

    Science.gov (United States)

    Szulczewski, Greg

    2012-01-01

    This chapter reviews tunneling of spin-polarized electrons through molecules positioned between ferromagnetic electrodes, which gives rise to tunneling magnetoresistance. Such measurements yield important insight into the factors governing spin-polarized electron injection into organic semiconductors, thereby offering the possibility to manipulate the quantum-mechanical spin degrees of freedom for charge carriers in optical/electrical devices. In the first section of the chapter a brief description of the Jullière model of spin-dependent electron tunneling is reviewed. Next, a brief description of device fabrication and characterization is presented. The bulk of the review highlights experimental studies on spin-polarized electron tunneling and magnetoresistance in molecular junctions. In addition, some experiments describing spin-polarized scanning tunneling microscopy/spectroscopy on single molecules are mentioned. Finally, some general conclusions and prospectus on the impact of spin-polarized tunneling in molecular junctions are offered.

  11. Giant magneto-resistance devices

    CERN Document Server

    Hirota, Eiichi; Inomata, Koichiro

    2002-01-01

    This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

  12. Artifacts that mimic ballistic magnetoresistance

    International Nuclear Information System (INIS)

    Egelhoff, W.F. . E-mail : egelhoff@nist.gov; Gan, L.; Ettedgui, H.; Kadmon, Y.; Powell, C.J.; Chen, P.J.; Shapiro, A.J.; McMichael, R.D.; Mallett, J.J.; Moffat, T.P.; Stiles, M.D.; Svedberg, E.B.

    2005-01-01

    We have investigated the circumstances underlying recent reports of very large values of ballistic magnetoresistance (BMR) in nanocontacts between magnetic wires. We find that the geometries used are subject to artifacts due to motion of the wires that distort the nanocontact thereby changing its electrical resistance. Since these nanocontacts are often of atomic scale, reliable experiments would require stability on the atomic scale. No method for achieving such stability in macroscopic wires is apparent. We conclude that macroscopic magnetic wires cannot be used to establish the validity of the BMR effect

  13. Magnetoresistance through spin-polarized p states

    International Nuclear Information System (INIS)

    Papanikolaou, Nikos

    2003-01-01

    We present a theoretical study of the ballistic magnetoresistance in Ni contacts using first-principles, atomistic, electronic structure calculations. In particular we investigate the role of defects in the contact region with the aim of explaining the recently observed spectacular magnetoresistance ratio. Our results predict that the possible presence of spin-polarized oxygen in the contact region could explain conductance changes by an order of magnitude. Electronic transport essentially occurs through spin-polarized oxygen p states, and this mechanism gives a much higher magnetoresistance than that obtained assuming clean atomically sharp domain walls alone

  14. Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn.

    Science.gov (United States)

    Galceran, R; Fina, I; Cisneros-Fernández, J; Bozzo, B; Frontera, C; López-Mir, L; Deniz, H; Park, K-W; Park, B-G; Balcells, Ll; Martí, X; Jungwirth, T; Martínez, B

    2016-10-20

    Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of aniferromagnetic semiconductors and metals with Néel temperatures above room temperature exists. In the present manuscript, we persevere in the quest for the limits of how large can anisotropic magnetoresistance be in antiferromagnetic materials with very large spin-orbit coupling. We selected IrMn as a prime example of first-class moment (Mn) and spin-orbit (Ir) combination. Isothermal magnetotransport measurements in an antiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer have been performed. The metal/insulator structure with magnetic coupling between both layers allows the measurement of the modulation of the transport properties exclusively in the antiferromagnetic layer. Anisotropic magnetoresistance as large as 0.15% has been found, which is much larger than that for a bare IrMn layer. Interestingly, it has been observed that anisotropic magnetoresistance is strongly influenced by the field cooling conditions, signaling the dependence of the found response on the formation of domains at the magnetic ordering temperature.

  15. Negative magnetoresistance in Dirac semimetal Cd3As2.

    Science.gov (United States)

    Li, Hui; He, Hongtao; Lu, Hai-Zhou; Zhang, Huachen; Liu, Hongchao; Ma, Rong; Fan, Zhiyong; Shen, Shun-Qing; Wang, Jiannong

    2016-01-08

    A large negative magnetoresistance (NMR) is anticipated in topological semimetals in parallel magnetic fields, demonstrating the chiral anomaly, a long-sought high-energy-physics effect, in solid-state systems. Recent experiments reveal that the Dirac semimetal Cd3As2 has the record-high mobility and positive linear magnetoresistance in perpendicular magnetic fields. However, the NMR has not yet been unveiled. Here we report the observation of NMR in Cd3As2 microribbons in parallel magnetic fields up to 66% at 50 K and visible at room temperatures. The NMR is sensitive to the angle between magnetic and electrical fields, robust against temperature and dependent on the carrier density. The large NMR results from low carrier densities in our Cd3As2 samples, ranging from 3.0 × 10(17) cm(-3) at 300 K to 2.2 × 10(16) cm(-3) below 50 K. We therefore attribute the observed NMR to the chiral anomaly. In perpendicular magnetic fields, a positive linear magnetoresistance up to 1,670% at 14 T and 2 K is also observed.

  16. Angular Accelerating White Light

    CSIR Research Space (South Africa)

    Dudley, Angela L

    2015-08-01

    Full Text Available angular acceleration during propagation which is achieved by superpositions of Bessel beams with non-canonical phase functions. They demonstrate these angular accelerating fields by modulating the phase and amplitude of a supercontinuum source with the use...

  17. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.

    Science.gov (United States)

    Zhang, Kun; Li, Huan-Huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-Tao; Tian, Yu-Feng; Yan, Shi-Shen; Lin, Zhao-Jun; Kang, Shi-Shou; Chen, Yan-Xue; Liu, Guo-Lei; Mei, Liang-Mo

    2015-09-21

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. We find that the rectification magnetoresistance in Al/Ge Schottky heterojunctions is as large as 250% at room temperature, which is greatly enhanced as compared with the conventional magnetoresistance of 70%. The findings of rectification magnetoresistance open the way to the new nonmagnetic Ge-based spintronics devices of large rectification magnetoresistance at ambient temperature under the alternating-current due to the simultaneous implementation of the rectification and magnetoresistance in the same devices.

  18. Size effects under a strong magnetic field: transverse magnetoresistance of thin gold films deposited on mica

    International Nuclear Information System (INIS)

    Munoz, Raul C; HenrIquez, Ricardo; GarcIa, Juan Pablo; Moncada, Ana MarIa; Espinosa, Andres; Robles, Marcelo; Kremer, German; Moraga, Luis; Cancino, Simon; Morales, Jose Roberto; RamIrez, Adan; Oyarzun, Simon; Suarez, Marco Antonio; Chen, David; Zumelzu, Ernesto; Lizama, Claudio

    2006-01-01

    We report measurements of transverse magnetoresistance where the signal can be attributed to electron-surface scattering, together with measurements of the surface roughness of the films on an atomic scale. The measurements were performed with a scanning tunnelling microscope (STM) on four thin gold films evaporated onto mica. The magnetoresistance exhibits a marked thickness dependence: at 4 K and 9 T is about 5% for the thinner (69 nm) film, and about 14% for the thicker (185 nm) film. Sondheimer's theory provides an accurate description of the temperature dependence of the resistivity, but predicts a magnetoresistance one order of magnitude smaller than that observed at 4 K. Calecki's theory in the limit of small roughness correlation length, predicts a resistivity two orders of magnitude larger than observed at 4 K

  19. Anomalies of magnetoresistance of compounds with atomic clusters RB12 (R = Ho, Er, Tm, Lu)

    International Nuclear Information System (INIS)

    Sluchanko, N. E.; Bogach, A. V.; Glushkov, V. V.; Demishev, S. V.; Samarin, N. A.; Sluchanko, D. N.; Dukhnenko, A. V.; Levchenko, A. V.

    2009-01-01

    The magnetoresistance and magnetization of single-crystal samples of rare-earth dodecaborides RB 12 (R = Ho, Er, Tm, Lu) have been measured at low temperatures (1.8-35 K) in a magnetic field of up to 70 kOe. The effect of positive magnetoresistance that obeys the Kohler's rule Δρ/ρ = f(ρ(0, 300 K)H/ρ(0, T)) is observed for the nonmagnetic metal LuB 12 . In the magnetic dodecaborides HoB 12 , ErB 12 , and TmB 12 , three characteristic regimes of the magnetoresistance behavior have been revealed: the positive magnetoresistance effect similar to the case of LuB 12 is observed at T > 25 K; in the range T N ≤ T ≤ 15 K, the magnetoresistance becomes negative and depends quadratically on the external magnetic field; and, finally, upon the transition to the antiferromagnetic phase (T N ), the positive magnetoresistance is again observed and its amplitude reaches 150% for HoB 12 . It has been shown that the observed anomalies of negative magnetoresistance in the paramagnetic phase can be explained within the Yosida model of conduction electron scattering by localized magnetic moments. The performed analysis confirms the formation of spin-polaron states in the 5d band in the vicinity of rare-earth ions in paramagnetic and magnetically ordered phases of RB 12 and makes it possible to reveal a number of specific features in the transformation of the magnetic structure of the compounds under investigation

  20. Professional AngularJS

    CERN Document Server

    Karpov, Valeri

    2015-01-01

    A comprehensive guide to AngularJS, Google's open-source client-side framework for app development. Most of the existing guides to AngularJS struggle to provide simple and understandable explanations for more advanced concepts. As a result, some developers who understand all the basic concepts of AngularJS struggle when it comes to building more complex real-world applications. Professional AngularJS provides a thorough understanding of AngularJS, covering everything from basic concepts, such as directives and data binding, to more advanced concepts like transclusion, build systems, and auto

  1. Transverse target-spin asymmetry associated with deeply virtual Compton scattering on the proton and a resulting model-dependent constraint on the total angular momentum of quarks in the nucleon

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Zhenyu

    2007-02-15

    In this thesis we report on the rst results on the transverse target-spin asymmetry associated with deeply virtual Compton scattering on the proton. It is shown that this asymmetry can provide one of the rare possibilities to access the Generalized Parton Distribution (GPD) E of the nucleon, and thus, through models for E, also to the total angular momentum of u and d quarks in the nucleon. The measurement was performed using the 27.6 GeV positron beam of the HERA storage ring and the transversely polarized hydrogen target of the HERMES experiment at DESY. The two leading azimuthal amplitudes of the asymmetry are extracted from the HERMES 2002-2004 data, corresponding to an integrated luminosity of 65.3 pb.1. By comparing the results obtained at HERMES and theoretical predictions based on a phenomenological model of GPDs, we obtain a model-dependent constraint on the total angular momentum of quarks in the nucleon. (orig.)

  2. Transverse target-spin asymmetry associated with deeply virtual Compton scattering on the proton and a resulting model-dependent constraint on the total angular momentum of quarks in the nucleon

    International Nuclear Information System (INIS)

    Ye, Zhenyu

    2007-02-01

    In this thesis we report on the rst results on the transverse target-spin asymmetry associated with deeply virtual Compton scattering on the proton. It is shown that this asymmetry can provide one of the rare possibilities to access the Generalized Parton Distribution (GPD) E of the nucleon, and thus, through models for E, also to the total angular momentum of u and d quarks in the nucleon. The measurement was performed using the 27.6 GeV positron beam of the HERA storage ring and the transversely polarized hydrogen target of the HERMES experiment at DESY. The two leading azimuthal amplitudes of the asymmetry are extracted from the HERMES 2002-2004 data, corresponding to an integrated luminosity of 65.3 pb.1. By comparing the results obtained at HERMES and theoretical predictions based on a phenomenological model of GPDs, we obtain a model-dependent constraint on the total angular momentum of quarks in the nucleon. (orig.)

  3. Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2 free layer ex-situ annealed at 400 °C.

    Science.gov (United States)

    Takemura, Yasutaka; Lee, Du-Yeong; Lee, Seung-Eun; Park, Jea-Gun

    2016-12-02

    For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top Co 2 Fe 6 B 2 free layer ex situ annealed at 400 °C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (t Pt ): it peaked (∼134%) at a specific t Pt (3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the Co 2 Fe 6 B 2 pinned layer when t Pt increased from 2.0-3.3 nm, and then rapidly decreased from 134%-38.6% by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when t Pt increased from 3.3-14.3 nm.

  4. Scanning magneto-resistance microscopy with FIB trimmed yoke-type magneto-resistive tape heads

    NARCIS (Netherlands)

    Phillips, G.N.; Eisenberg, M.; Eisenberg, M.; Persat, N.; Draaisma, E.A.; Abelmann, Leon; Lodder, J.C.

    2001-01-01

    Scanning magneto-resistance microscopy has been performed with thin film yoke-type magneto-resistive tape heads possessing eight channels. The read flux guides of these channels have been trimmed down from 24 μm to widths varying between 5.5 μm and 148 nm by focused ion beam milling with Ga+ ions.

  5. Inverse Magnetoresistance in Polymer Spin Valves.

    Science.gov (United States)

    Ding, Shuaishuai; Tian, Yuan; Li, Yang; Mi, Wenbo; Dong, Huanli; Zhang, Xiaotao; Hu, Wenping; Zhu, Daoben

    2017-05-10

    In this work, both negative and positive magnetoresistance (MR) in solution-processed regioregular poly(3-hexylthiophene) (RR-P3HT) is observed in organic spin valves (OSVs) with vertical La 2/3 Sr 1/3 MnO 3 (LSMO)/P3HT/AlO x /Co configuration. The ferromagnetic (FM) LSMO electrode with near-atomic flatness is fabricated by a DC facing-target magnetron sputtering method. This research is focused on the origin of the MR inversion. Two types of devices are investigated in details: One with Co penetration shows a negative MR of 0.2%, while the other well-defined device with a nonlinear behavior has a positive MR of 15.6%. The MR measurements in LSMO/AlO x /Co and LSMO/Co junctions are carried to exclude the interference of insulating layer and two FM electrodes themselves. By examining the Co thicknesses and their corresponding magnetic hysteresis loops, a spin-dependent hybrid-interface-state model by Co penetration is induced to explain the MR sign inversion. These results proven by density functional theory (DFT) calculations may shed light on the controllable interfacial properties in designing novel OSV devices.

  6. Giant magnetoresistance, three-dimensional Fermi surface and origin of resistivity plateau in YSb semimetal.

    Science.gov (United States)

    Pavlosiuk, Orest; Swatek, Przemysław; Wiśniewski, Piotr

    2016-12-09

    Very strong magnetoresistance and a resistivity plateau impeding low temperature divergence due to insulating bulk are hallmarks of topological insulators and are also present in topological semimetals where the plateau is induced by magnetic field, when time-reversal symmetry (protecting surface states in topological insulators) is broken. Similar features were observed in a simple rock-salt-structure LaSb, leading to a suggestion of the possible non-trivial topology of 2D states in this compound. We show that its sister compound YSb is also characterized by giant magnetoresistance exceeding one thousand percent and low-temperature plateau of resistivity. We thus performed in-depth analysis of YSb Fermi surface by band calculations, magnetoresistance, and Shubnikov-de Haas effect measurements, which reveals only three-dimensional Fermi sheets. Kohler scaling applied to magnetoresistance data accounts very well for its low-temperature upturn behavior. The field-angle-dependent magnetoresistance demonstrates a 3D-scaling yielding effective mass anisotropy perfectly agreeing with electronic structure and quantum oscillations analysis, thus providing further support for 3D-Fermi surface scenario of magnetotransport, without necessity of invoking topologically non-trivial 2D states. We discuss data implying that analogous field-induced properties of LaSb can also be well understood in the framework of 3D multiband model.

  7. Gate-tunable large magnetoresistance in an all-semiconductor spin valve device.

    Science.gov (United States)

    Oltscher, M; Eberle, F; Kuczmik, T; Bayer, A; Schuh, D; Bougeard, D; Ciorga, M; Weiss, D

    2017-11-27

    A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last few decades in devices with lateral semiconducting transport channels between ferromagnetic source and drain contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both a large two-terminal magnetoresistance in a lateral spin valve device with a two-dimensional channel, with up to 80% resistance change, and tunability of the magnetoresistance by an electric gate. The enhanced magnetoresistance is due to finite electric field effects at the contact interface, which boost spin-to-charge conversion. The gating scheme that we use is based on switching between uni- and bidirectional spin diffusion, without resorting to spin-orbit coupling. Therefore, it can also be employed in materials with low spin-orbit coupling.

  8. Investigation of doping and particle size effect on structural, magnetic and magnetoresistance properties of manganites

    Directory of Open Access Journals (Sweden)

    M. Hakimi

    2008-06-01

    Full Text Available  In this paper after introduction of manganites, we have studied the effect of particle size and doping on structural, magnetic and magnetoresistance of LSMO manganite samples. The magnetoresistance measurements show that, by decreasing the particle size LFMR increases. Also the results show that the LFMR increases at low doping levels and decreases at high doping levels. The spin dependent tunneling and scattering at the grain boundaries is the origin of increasing the LFMR at low doping levels. Also the substitution of impurity ions at Mn sites and subsequently weaking of double exchange is responsible for decreasing of LFMR at high doping level.

  9. Room temperature giant and linear magnetoresistance in topological insulator Bi2Te3 nanosheets.

    Science.gov (United States)

    Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao

    2012-06-29

    Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi(2)Te(3) topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

  10. Tuning the magnetoresistance of ultrathin WTe2 sheets by electrostatic gating.

    Science.gov (United States)

    Na, Junhong; Hoyer, Alexander; Schoop, Leslie; Weber, Daniel; Lotsch, Bettina V; Burghard, Marko; Kern, Klaus

    2016-11-10

    The semimetallic, two-dimensional layered transition metal dichalcogenide WTe 2 has raised considerable interest due to its huge, non-saturating magnetoresistance. While for the origin of this effect, a close-to-ideal balance of electrons and holes has been put forward, the carrier concentration dependence of the magnetoresistance remains to be clarified. Here, we present a detailed study of the magnetotransport behaviour of ultrathin, mechanically exfoliated WTe 2 sheets as a function of electrostatic back gating. The carrier concentration and mobility, determined using the two band model and analysis of the Shubnikov-de Haas oscillations, indicate enhanced surface scattering for the thinnest sheets. By the back gate action, the magnetoresistance could be tuned by up to ∼100% for a ∼13 nm-thick WTe 2 sheet.

  11. Linear magnetoresistance and surface to bulk coupling in topological insulator thin films.

    Science.gov (United States)

    Singh, Sourabh; Gopal, R K; Sarkar, Jit; Pandey, Atul; Patel, Bhavesh G; Mitra, Chiranjib

    2017-12-20

    We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi 2 Se 2 Te and BiSbTeSe 1.6 were grown using the pulsed laser deposition technique and subjected to transport measurements. Magnetotransport measurements indicate a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values. We present a careful analysis to explain the origin of LMR taking into consideration all the existing models of LMR. Here we consider that the bulk insulating states and the metallic surface states constitute two parallel conduction channels. Invoking this, we were able to explain linear magnetoresistance behavior as a competition between these parallel channels. We observe that the cross-over field, where LMR sets in, decreases with increasing temperature. We propose that this cross-over field can be used phenomenologically to estimate the strength of surface to bulk coupling.

  12. Tunneling anisotropic magnetoresistance via molecular π orbitals of Pb dimers

    Science.gov (United States)

    Schöneberg, Johannes; Ferriani, Paolo; Heinze, Stefan; Weismann, Alexander; Berndt, Richard

    2018-01-01

    Pb dimers on a ferromagnetic surface are shown to exhibit large tunneling anisotropic magnetoresistance (TAMR) due to molecular π orbitals. Dimers oriented differently with respect to the magnetization directions of a ferromagnetic Fe double layer on W(110) were made with a scanning tunneling microscope. Depending on the dimer orientations, TAMR is absent or as large as 20% at the Fermi level. General arguments and first-principles calculations show that mixing of molecular orbitals due to spin-orbit coupling, which leads to TAMR, is maximal when the magnetization is oriented parallel to the dimer axis.

  13. Current perpendicular to plane giant magnetoresistance in laminated nanostructures

    International Nuclear Information System (INIS)

    Vedyayev, A.; Zhukov, I.; Dieny, B.

    2005-01-01

    We theoretically studied spin-dependent electron transport perpendicular-to-plain (CPP) in magnetic laminated multilayered structures by using Kubo formalism. We took into account not only bulk scattering, but the interface resistance due to both specular and diffuse reflection and also spin conserving and spin-flip processes. It was shown that spin-flip scattering at interfaces substantially reduces the value of giant magnetoresistance (GMR). This can explain the experimental observations that the CPP GMR ratio for laminated structures only slightly increases as compared to non-laminated ones even though lamination induces a significant increase in CPP resistance

  14. Superconducting spin-triplet-MRAM with infinite magnetoresistance ratio

    Energy Technology Data Exchange (ETDEWEB)

    Lenk, Daniel; Ullrich, Aladin; Obermeier, Guenter; Mueller, Claus; Krug von Nidda, Hans-Albrecht; Horn, Siegfried; Tidecks, Reinhard [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); Morari, Roman [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Solid State Physics Department, Kazan Federal University, 420008 Kazan (Russian Federation); Zdravkov, Vladimir I. [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Institute of Applied Physics and Interdisciplinary Nanoscience Center, Universitaet Hamburg, Jungiusstrasse 9A, D-20355 Hamburg (Germany); Sidorenko, Anatoli S. [D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Academiei Str. 3/3, MD2028 Kishinev (Moldova, Republic of); Tagirov, Lenar R. [Institut fuer Physik, Universitaet Augsburg, D-86159 Augsburg (Germany); Solid State Physics Department, Kazan Federal University, 420008 Kazan (Russian Federation)

    2016-07-01

    We fabricated a nanolayered hybrid superconductor-ferromagnet spin-valve structure, i.e. the superconducting transition temperature of this structure depends on its magnetic history. The observed spin-valve effect is based on the generation of the long range odd in frequency triplet component, arising from a non-collinear relative orientation of the constituent ferromagnetic layers. We investigated the effect both as a function of the sweep amplitude of the magnetic field, determining the magnetic history, and the applied transport current. Moreover, we demonstrate the possibility of switching the system from the normal o the superconducting state by applying field pulses, yielding an infinite magnetoresistance ratio.

  15. Multiprobe perpendicular giant magnetoresistance measurements on isolated multilayered nanowires

    International Nuclear Information System (INIS)

    Elhoussine, F.; Vila, L.; Piraux, L.; Faini, G.

    2005-01-01

    By combining electrochemical deposition into nanopores with electron-beam lithography, we developed an experiment setup to probe the giant magnetoresistance effects with current perpendicular to the plane (CPP-GMR) on isolated nanowires. Here we present four-probe magnetotransport measurements on multilayered Co (55 nm)/Cu (5 nm) nanowires of 100 nm diameter. The multiprobe technique allowed us to measure high GMR ratio on wire segments as short as 500 nm, without any additional contact resistance. We present different magnetic behaviors and GMR ratios depending on the measured segment and the applied field orientation. Results are discussed in terms of the CPP-GMR theory

  16. Single nucleotide polymorphism (SNP) detection on a magnetoresistive sensor

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Østerberg, Frederik Westergaard; Dufva, Martin

    2013-01-01

    We present a magnetoresistive sensor platform for hybridization assays and demonstrate its applicability on single nucleotide polymorphism (SNP) genotyping. The sensor relies on anisotropic magnetoresistance in a new geometry with a local negative reference and uses the magnetic field from...

  17. Angular correlation methods

    International Nuclear Information System (INIS)

    Ferguson, A.J.

    1974-01-01

    An outline of the theory of angular correlations is presented, and the difference between the modern density matrix method and the traditional wave function method is stressed. Comments are offered on particular angular correlation theoretical techniques. A brief discussion is given of recent studies of gamma ray angular correlations of reaction products recoiling with high velocity into vacuum. Two methods for optimization to obtain the most accurate expansion coefficients of the correlation are discussed. (1 figure, 53 references) (U.S.)

  18. Huge magnetoresistance effect of highly oriented pyrolytic graphite

    International Nuclear Information System (INIS)

    Du Youwei; Wang Zhiming; Ni Gang; Xing Dingyu; Xu Qingyu

    2004-01-01

    Graphite is a quasi-two-dimensional semimetal. However, for usual graphite the magnetoresistance is not so high due to its small crystal size and no preferred orientation. Huge positive magnetoresistance up to 85300% at 4.2 K and 4950% at 300 K under 8.15 T magnetic field was found in highly oriented pyrolytic graphite. The mechanism of huge positive magnetoresistance is not only due to ordinary magnetoresistance but also due to magnetic-field-driven semimetal-insulator transition

  19. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions

    OpenAIRE

    Zhang, Kun; Li, Huan-huan; Grünberg, Peter; Li, Qiang; Ye, Sheng-tao; Tian, Yu-feng; Yan, Shi-shen; Lin, Zhao-jun; Kang, Shi-shou; Chen, Yan-xue; Liu, Guo-lei; Mei, and Liang-mo

    2015-01-01

    Magnetoresistance and rectification are two fundamental physical properties of heterojunctions and respectively have wide applications in spintronics devices. Being different from the well known various magnetoresistance effects, here we report a brand new large magnetoresistance that can be regarded as rectification magnetoresistance: the application of a pure small sinusoidal alternating-current to the nonmagnetic Al/Ge Schottky heterojunctions can generate a significant direct-current volt...

  20. Low-field magnetoresistance of La{sub 0.7}Ca{sub 0.3}MnO{sub 3} perovskite synthesized by reactive milling method

    Energy Technology Data Exchange (ETDEWEB)

    Manh, D.H., E-mail: manhdh@ims.vast.ac.v [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Cau Giay Distr., Hanoi (Viet Nam); Phong, P.T. [Nha Trang Pedagogic College, 1 Nguyen Chanh St., Khanh Hoa Province (Viet Nam); Thanh, T.D.; Hong, L.V.; Phuc, N.X. [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Cau Giay Distr., Hanoi (Viet Nam)

    2010-06-11

    Nanocrystalline, granular samples of La{sub 0.7}Ca{sub 0.3}MnO{sub 3} (LCMO) were synthesized by reactive milling method and annealed at various temperatures. Effect of grain size on the low-field magnetoresistance (LFMR) has been investigated. Based upon a phenomenological model taking into account the spin-polarized transport across grain boundaries, we explained magnetic field dependence of magnetoresistance in LCMO samples. The contribution to the magnetoresistance coming from spin-polarized tunneling was separated out from the intergranular contribution. The fitted results showed that the temperature dependence of the LFMR displays a Curie-Weiss law-like behavior.

  1. Sources of negative tunneling magnetoresistance in multilevel quantum dots with ferromagnetic contacts

    DEFF Research Database (Denmark)

    Koller, Sonja; Grifoni, Milena; Paaske, Jens

    2012-01-01

    We analyze distinct sources of spin-dependent energy level shifts and their impact on the tunneling magnetoresistance (TMR) of interacting quantum dots coupled to collinearly polarized ferromagnetic leads. Level shifts due to virtual charge fluctuations can be quantitatively evaluated within...

  2. Magnetoresistive biosensors for quantitative proteomics

    Science.gov (United States)

    Zhou, Xiahan; Huang, Chih-Cheng; Hall, Drew A.

    2017-08-01

    Quantitative proteomics, as a developing method for study of proteins and identification of diseases, reveals more comprehensive and accurate information of an organism than traditional genomics. A variety of platforms, such as mass spectrometry, optical sensors, electrochemical sensors, magnetic sensors, etc., have been developed for detecting proteins quantitatively. The sandwich immunoassay is widely used as a labeled detection method due to its high specificity and flexibility allowing multiple different types of labels. While optical sensors use enzyme and fluorophore labels to detect proteins with high sensitivity, they often suffer from high background signal and challenges in miniaturization. Magnetic biosensors, including nuclear magnetic resonance sensors, oscillator-based sensors, Hall-effect sensors, and magnetoresistive sensors, use the specific binding events between magnetic nanoparticles (MNPs) and target proteins to measure the analyte concentration. Compared with other biosensing techniques, magnetic sensors take advantage of the intrinsic lack of magnetic signatures in biological samples to achieve high sensitivity and high specificity, and are compatible with semiconductor-based fabrication process to have low-cost and small-size for point-of-care (POC) applications. Although still in the development stage, magnetic biosensing is a promising technique for in-home testing and portable disease monitoring.

  3. Magnetoresistance in terbium and holmium single crystals

    International Nuclear Information System (INIS)

    Singh, R.L.; Jericho, M.H.; Geldart, D.J.W.

    1976-01-01

    The longitudinal magnetoresistance of single crystals of terbium and holmium metals in their low-temperature ferromagnetic phase has been investigated in magnetic fields up to 80 kOe. Typical magnetoresistance isotherms exhibit a minimum which increases in depth and moves to higher fields as the temperature increases. The magnetoresistance around 1 0 K, where inelastic scattering is negligible, has been interpreted as the sum of a negative contribution due to changes in the domain structure and a positive contribution due to normal magnetoresistance. At higher temperatures, a phenomenological approach has been developed to extract the inelastic phonon and spin-wave components from the total measured magnetoresistance. In the temperature range 4--20 0 K (approximately), the phonon resistivity varies as T 3 . 7 for all samples. Approximate upper and lower bounds have been placed on the spin-wave resistivity which is also found to be described by a simple power law in this temperature range. The implications of this result for theoretical treatments of spin-wave resistivity due to s-f exchange interactions are considered. It is concluded that the role played by the magnon energy gap is far less transparent than previously suggested

  4. Enhancement and Angular Dependence of Transport Critical Current Density in Pulsed Laser Deposited YBa2Cu3O7-x+BaSnO3 Films in Applied Magnetic Fields (Postprint)

    Science.gov (United States)

    2007-09-25

    BaSnO3 FILMS IN APPLIED MAGNETIC FIELDS (POSTPRINT) C.V. Varanasi, J. Burke, and L. Brunke University of Dayton Research Institute H. Wang...SUBTITLE ENHANCEMENT AND ANGULAR DEPENDENCE OF TRANSPORT CRITICAL CURRENT DENSITY IN PULSED LASER DEPOSITED YBa2Cu3O7−x+ BaSnO3 FILMS IN APPLIED...nanoparticles of BaSnO3 (BSO) were processed using pulsed laser ablation of a special target made with dual phase sectors of YBCO and BSO. Transport critical

  5. Analysis of dependence of fission cross section and angular anisotropy of the 235U fission fragment escape induced by neutrons of intermediate energies (epsilon < or approximately200 keV) on target nucleus orientation

    International Nuclear Information System (INIS)

    Barabanov, A.L.

    1985-01-01

    Experimental data on dependence of fission cross section Σsub(f) (epsilon) and angular anisotropy W(epsilon, 0 deg)/W(epsilon, 90 deg) of sup(235)U fission fragment escape by neutrons with energy epsilon=100 and 200 keV on orientation of target nuclei are analyzed. 235 U (Isup(πsub(0))=7/2sup(-)) nuclei were orientated at the expense of interaction of quadrupole nucleus momenta with nonuniform electric field of uranyl-rubidium nitrate crystal at crystal cooling to T=0.2 K. The analysis was carried out with three different sets of permeability factors T(epsilon). Results of the analysis weakly depend on T(epsilon) choice. It is shown that a large number of adjusting parameters (six fissionabilities γsup(f)(Jsup(π), epsilon) and six momenta sub(Jsup(π))) permit to described experimental data on Σsub(f)(epsilon) and W(epsilon, 0 deg)/W(epsilon, 90 deg), obtained at epsilon=200 keV by introducing essential dependence of γsup(f)(Jsup(π), epsilon) and sub(Jsup(π)) on Jsup(π). Estimations of fission cross sections Σsub(f)(epsilon) and angular distribution W(epsilon, n vector) up to T approximately equal to 0.01 K in two geometries of the experiment: the orientation axis is parallel and perpendicular to momentum direction p vector of incident neutrons, are conducted

  6. Angular Acceleration without Torque?

    Science.gov (United States)

    Kaufman, Richard D.

    2012-01-01

    Hardly. Just as Robert Johns qualitatively describes angular acceleration by an internal force in his article "Acceleration Without Force?" here we will extend the discussion to consider angular acceleration by an internal torque. As we will see, this internal torque is due to an internal force acting at a distance from an instantaneous center.

  7. Rotations and angular momentum

    International Nuclear Information System (INIS)

    Nyborg, P.; Froyland, J.

    1979-01-01

    This paper is devoted to the analysis of rotational invariance and the properties of angular momentum in quantum mechanics. In particular, the problem of addition of angular momenta is treated in detail, and tables of Clebsch-Gordan coefficients are included

  8. The effect of magnetic ordering on the giant magnetoresistance of Cr-Fe-V and Cr-Fe-Mn

    International Nuclear Information System (INIS)

    Somsen, Ch.; Acet, M.; Nepecks, G.; Wassermann, E.F.

    2000-01-01

    Cr-rich Cr 1-x Fe x alloys with compositions in the vicinity of mixed ferromagnetic and antiferromagnetic exchange (x=0.18) exhibit giant magnetoresistance. In order to understand the influence of the antiferromagnetism of Cr on the giant magnetoresistance one can manipulate the antiferromagnetic exchange either by adding vanadium, which destroys the antiferromagnetism of Cr, or by adding manganese, which enhances it. Cr-Fe-V and Cr-Fe-Mn alloys also have Curie temperatures that lie between low temperatures and room temperature in the concentration region where giant magnetoresistance is observed. Therefore, they are also used as samples to study the magnetoresistance as a function of the strength of FM exchange. We discuss these points in the light of temperature and concentration-dependent magnetoresistance experiments on Cr 0.99-x Fe x V 0.01 , Cr 0.96-x Fe x V 0.04 , Cr 0.90-x Fe x Mn 0.10 and Cr 0.55 Fe x Mn 0.45-x alloys. Results indicate that the most favorable condition for a large magnetoresistance in these alloys occurs at temperatures near the Curie temperature

  9. Magnetoresistance of nanogranular Ni/NiO controlled by exchange anisotropy

    International Nuclear Information System (INIS)

    Del Bianco, L.; Spizzo, F.; Tamisari, M.; Allia, P.

    2013-01-01

    A link between exchange anisotropy and magnetoresistance has been found to occur in a Ni/NiO sample consisting of Ni nanocrystallites (mean size ∼13 nm, Ni content ∼33 vol%) dispersed in a NiO matrix. This material shows metallic-type electric conduction and isotropic spin-dependent magnetoresistance as well as exchange bias effect. The latter is the outcome of an exchange anisotropy arising from the contact interaction between the Ni phase and the NiO matrix. Combined analysis of magnetization M(H) and magnetoresistance MR(H) loops measured in the 5–250 K temperature range after zero-field-cooling (ZFC) and after field-cooling (FC) from 300 K reveals that the magnetoresistance is influenced by exchange anisotropy, which is triggered by the FC process and can be modified in strength by varying the temperature. Compared to the ZFC case, the exchange anisotropy produces a horizontal shift of the FC MR(H) loop along with a reduction of the MR response associated to the reorientation of the Ni moments. A strict connection between magnetoresistance and remanent magnetization of FC loops on one side and the exchange field on the other, ruled by exchange anisotropy, is indicated. - Highlights: • Nanogranular Ni/NiO with giant magnetoresistance (MR) and exchange bias effect. • Exchange anisotropy produces a shift of the field-cooled MR(H) loop and reduces MR. • MR, remanence of field-cooled loops and exchange field are three correlated quantities. • It is possible to control MR of nanogranular systems through the exchange anisotropy

  10. Peak-effect and angular hysteresis in J{sub c}(H, {theta}) dependencies for YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Pan, V M [Institute for Metal Physics, National Academy of Sciences of Ukraine, 36 Vernadsky Blvd., Kiev, 03680 (Ukraine); Pozigun, S A [Institute for Metal Physics, National Academy of Sciences of Ukraine, 36 Vernadsky Blvd., Kiev, 03680 (Ukraine); Cherpak, Yu V [Institute for Metal Physics, National Academy of Sciences of Ukraine, 36 Vernadsky Blvd., Kiev, 03680 (Ukraine); Komashko, V A [Institute for Metal Physics, National Academy of Sciences of Ukraine, 36 Vernadsky Blvd., Kiev, 03680 (Ukraine); Kasatkin, A L [Institute for Metal Physics, National Academy of Sciences of Ukraine, 36 Vernadsky Blvd., Kiev, 03680 (Ukraine); Pashitskii, E A [Institute of Physics of National Academy of Sciences of Ukraine, 46 Nauki Ave., Kiev, 03650 (Ukraine); Semenov, A V [Institute of Physics of National Academy of Sciences of Ukraine, 46 Nauki Ave., Kiev, 03650 (Ukraine); Pan, A V [ISEM, University of Wollongong, Northfield Ave., Wollongong, NSW 2522 (Australia)

    2006-06-01

    New phenomena - peak-effect and angular hysteresis - in field/angle J{sub c}(H, {theta}) dependencies are detected for YBCO epitaxial films at moderate dc magnetic fields H parallel to the film. Films (300-350 nm thick) are deposited by off-axis dc magnetron sputtering onto rcut sapphire substrate buffered with CeO{sub 2}. Surface roughness (peak-to-valley) determined by AFM does not exceed 2 nm. J{sub c}(H, {theta})-curves are measured by low-frequency ac magnetic susceptibility and four-probe transport technique. J{sub c}(H) at H||ab-plane for the most smooth films reveal dome-shape enhancement of J{sub c}(up to 10 p.c.) above J{sub c}(0) value, starting from the field H* ascribed to the first critical field H{sub c1} of thin film. J{sub c}(H)-plots at H||c-axis with a plateau at low fields followed by monotonic fall-down are consistent to our model of vortex lattice depinning from the out-of-plane linear defect network (growth-induced edge dislocations). Field dependencies of J{sub c} at arbitrary inclination angles may be recalculated from J{sub c}(H, {theta} = 0) and J{sub c}(H, {theta} = {pi}/2), assuming independent effects of normal Hcos{theta} and parallel Hsin{theta} field components on J{sub c}. Angle J{sub c}({theta})-dependencies evolution with H is shown to be consistent with dominant mechanism of pinning on edge dislocations. The most surprizing feature of this evolution is emergence of the peak in J{sub c}({theta})-dependence for H||c-direction, becoming observable only above threshold magnetic field H{sub p} dependent on film thickness and surface roughness. Angular hysteresis in J{sub c}(H, {theta}) dependence is detected for magnetic field directions close to H||ab-plane. This hysteresis is sensitive to magnetic/angular pre-history and together with observed peak-effect at H||ab-plane can be understood by account for surface (and/or geometrical) barrier as additional pinning source for Abrikosov vortices.

  11. Spin-polarized magnetic tunnelling magnetoresistive effects in various junctions

    Science.gov (United States)

    Miyazaki, T.; Tezuka, N.; Kumagai, S.; Ando, Y.; Kubota, H.; Murai, J.; Watabe, T.; Yokota, M.

    1998-03-01

    Recent progress concerning spin-polarized magnetic tunnelling effects for (i) trilayer standard ferromagnet (F)/insulator (I)/ferromagnet (F) junctions, (ii) spin-valve-type junctions, (iii) trilayer or multilayer ferromagnet/granular/ferromagnet junctions and (iv) F/I/F junction with a `wedge-geometry' insulator is reviewed. Special emphasis is placed on the dependence of the tunnel magnetoresistance ratio on temperature and also the intensity of the applied voltage. It was found that the resistance for the saturation magnetization state, 0022-3727/31/6/009/img1, and the tunnelling magnetoresistance ratio, TMR, of an 0022-3727/31/6/009/img2 junction decreased rapidly with increasing temperature, whereas those of a 0022-3727/31/6/009/img3 junction were insensitive to temperature. Concerning the bias voltage dependence of 0022-3727/31/6/009/img1 and TMR, the same tendency with temperature was observed for 0022-3727/31/6/009/img2 and 0022-3727/31/6/009/img3 junctions. Spin-valve-type junction exchange biased by a FeMn layer exhibits a relatively large TMR ratio up to about 400 K.

  12. Quark Orbital Angular Momentum

    Directory of Open Access Journals (Sweden)

    Burkardt Matthias

    2015-01-01

    Full Text Available Definitions of orbital angular momentum based on Wigner distributions are used as a framework to discuss the connection between the Ji definition of the quark orbital angular momentum and that of Jaffe and Manohar. We find that the difference between these two definitions can be interpreted as the change in the quark orbital angular momentum as it leaves the target in a DIS experiment. The mechanism responsible for that change is similar to the mechanism that causes transverse single-spin asymmetries in semi-inclusive deep-inelastic scattering.

  13. Investigation of structure and magnetoresistance in Co/ZnO films

    International Nuclear Information System (INIS)

    Quan Zhiyong; Xu Xiaohong; Li Xiaoli; Feng, Q.; Gehring, G. A.

    2010-01-01

    Co/ZnO films were deposited on glass substrates by magnetron sputtering at room temperature. The structure of the as-deposited films is studied by means of x-ray diffraction, x-ray photoelectron spectroscopy, and the zero-field-cooled and field-cooled magnetization curves. It is shown that the as-deposited samples consist of a mixture of regions of metallic Co and semiconducting ZnO. Large negative magnetoresistance of 26% and 11.9% are observed in the as-deposited Co/ZnO film with Co concentration of 50.7 at. % at 10 K and room temperature, respectively. Structural analysis, the temperature dependence of the conductivity and magnetoresistance reveal that the magnetoresistance is induced by spin-dependent tunneling between regions of conducting magnetic Co through the ZnO semiconducting barriers. The enhanced magnetoresistance in the low temperature regime may be related to the existence of higher-order tunneling processes between large Co regions mediated by small Co particles.

  14. Giant magnetoresistance due to magnetoelectric currents in Sr{sub 3}Co{sub 2}Fe{sub 24}O{sub 41} hexaferrites

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xian [Department of Electrical and Computer Engineering, Center for Microwave Magnetic Materials and Integrated Circuits, Northeastern University, Boston, Massachusetts 02115 (United States); School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Su, Zhijuan; Sokolov, Alexander; Hu, Bolin; Andalib, Parisa; Chen, Yajie, E-mail: y.chen@neu.edu; Harris, Vincent G. [Department of Electrical and Computer Engineering, Center for Microwave Magnetic Materials and Integrated Circuits, Northeastern University, Boston, Massachusetts 02115 (United States)

    2014-09-15

    The giant magnetoresistance and magnetoelectric (ME) effects of Z-type hexaferrite Sr{sub 3}Co{sub 2}Fe{sub 24}O{sub 41} were investigated. The present experiments indicated that an induced magnetoelectric current in a transverse conical spin structure not only presented a nonlinear behavior with magnetic field and electric field but also depended upon a sweep rate of the applied magnetic field. More interestingly, the ME current induced magnetoresistance was measured, yielding a giant room temperature magnetoresistance of 32.2% measured at low magnetic fields (∼125 Oe). These results reveal great potential for emerging applications of multifunctional magnetoelectric ferrite materials.

  15. Enhanced temperature-independent magnetoresistance below the ...

    Indian Academy of Sciences (India)

    Introduction. The giant and colossal magnetoresistance (GMR and CMR, respectively) effects in doped manganite films on LaAlO3 substrate grown by pulsed laser deposition (PLD), has greatly ... The SQUID magnetometer was used to measure the magnetization of the film at a field of H = 50 Oe. 3. Results and discussion.

  16. Thin-film magnetoresistive absolute position detector

    NARCIS (Netherlands)

    Groenland, J.P.J.

    1990-01-01

    The subject of this thesis is the investigation of a digital absolute posi- tion-detection system, which is based on a position-information carrier (i.e. a magnetic tape) with one single code track on the one hand, and an array of magnetoresistive sensors for the detection of the information on the

  17. A thin film magnetoresistive angle detector

    NARCIS (Netherlands)

    Eijkel, C.J.M.; Wieberdink, Johan W.; Fluitman, J.H.J.; Popma, T.J.A.; Groot, Peter; Leeuwis, Henk

    1990-01-01

    An overview is given of the results of our research on a contactless angle detector based on the anisotropic magnetoresistance effect (AMR effect) in a permalloy thin film. The results of high-temperature annealing treatment of the pemalloy film are discussed. Such a treatment suppresses the effects

  18. Optimization of the response of magnetoresistive elements

    NARCIS (Netherlands)

    Eijkel, C.J.M.; Fluitman, J.H.J.

    A way to optimize the output signal of a general thin-film magnetoresistive element with a homogeneous magnetization field as used in applications with a saturating external magnetic field is presented. The element is assumed to be operated by four-point measurement. In order to be able to compare

  19. Robust giant magnetoresistive effect type multilayer sensor

    NARCIS (Netherlands)

    Lenssen, K.M.H.; Kuiper, A.E.T.; Roozeboom, F.

    2002-01-01

    A robust Giant Magneto Resistive effect type multilayer sensor comprising a free and a pinned ferromagnetic layer, which can withstand high temperatures and strong magnetic fields as required in automotive applications. The GMR multi-layer has an asymmetric magneto-resistive curve and enables

  20. Enhanced temperature-independent magnetoresistance below the ...

    Indian Academy of Sciences (India)

    The film exhibits a large nearly temperature-independent magnetoresistance around 99% in the temperature regime below p. The zero field-cooled (ZFC) and field-cooled (FC) magnetization data at 50 Oe shows irreversibility between the ZFC and FC close to the ferromagnetic transition temperature c = 250 K. The ZFC ...

  1. Structure and magnetic properties of colossal magnetoresistance ...

    Indian Academy of Sciences (India)

    5Sr0.5CoO3 ... phenomenon of colossal magnetoresistance (CMR) that occur in these compounds. The structural and magnetic properties of these ... strain field that reduces with temperature. The Co–O2–Co bond angle is found to be 168◦.

  2. Optical Angular Momentum

    International Nuclear Information System (INIS)

    Arimondo, Ennio

    2004-01-01

    For many years the Institute of Physics has published books on hot topics based on a collection of reprints from different journals, including some remarks by the editors of each volume. The book on Optical Angular Momentum, edited by L Allen, S M Barnett and M J Padgett, is a recent addition to the series. It reproduces forty four papers originally published in different journals and in a few cases it provides direct access to works not easily accessible to a web navigator. The collection covers nearly a hundred years of progress in physics, starting from an historic 1909 paper by Poynting, and ending with a 2002 paper by Padgett, Barnett and coworkers on the measurement of the orbital angular momentum of a single photon. The field of optical angular momentum has expanded greatly, creating an interdisciplinary attraction for researchers operating in quantum optics, atomic physics, solid state physics, biophysics and quantum information theory. The development of laser optics, especially the control of single mode sources, has made possible the specific design of optical radiation modes with a high degree of control on the light angular momentum. The editors of this book are important figures in the field of angular momentum, having contributed to key progress in the area. L Allen published an historical paper in 1999, he and M J Padgett (together with M Babiker) produced few years ago a long review article which is today still the most complete basic introduction to the angular momentum of light, while S M Barnett has contributed several high quality papers to the progress of this area of physics. The editors' choice provides an excellent overview to all readers, with papers classified into eight different topics, covering the basic principles of the light and spin and orbital angular momentum, the laboratory tools for creating laser beams carrying orbital angular momentum, the optical forces and torques created by laser beams carrying angular momentum on

  3. Theory of the negative magnetoresistance in magnetic metallic multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Hood, R.Q.; Falicov, L.M. [California Univ., Berkeley, CA (United States). Dept. of Physics]|[Lawrence Berkeley Lab., CA (United States)

    1993-04-01

    The Boltzman equation is solved for a system consisting of alternating ferromagnetic normal metallic layers. The in-plane conductance of the film is calculated for two configurations: successive ferromagnetic layers aligned parallel and antiparallel to each other. Results explain the giant negative magnetoresistance encountered in these systems when an initial antiparallel arrangement is changed into a parallel configuration by application of an extemal magnetic field. The calculation depends on geometric parameters (the thicknesses of the layers); intrinsic metal parameters (number of conduction electrons, magnetization and effective masses in the layers); bulk sample properties (conductivity relaxation times); and interface scattering properties (diffuse scattering versus potential scattering at the interfaces). It is found that a large negative magnetoresistance requires, in general, considerable asymmetry in the interface scattering for the two spin orienmtions. All qualitative features of the experiments are reproduced. Quantitative agreement can be achieved with sensible values of the parameters. The effect can be conceptually explained based on considerations of phase-space availability for an electron of a given spin orientation as it travels through the multilayer sample in the various configurations and traverses the interfaces.

  4. A-site-deficiency-dependent structural, magnetic and magnetoresistance properties in the Pr{sub 0.6}Sr{sub 0.4}MnO{sub 3} manganites

    Energy Technology Data Exchange (ETDEWEB)

    Elleuch, F.; Triki, M. [Laboratoire de Physique Appliquée, Faculté des Sciences, Université de Sfax, BP 1171, 3000 Sfax (Tunisia); Bekri, M. [Physics Department, Rabigh College of Science and Art, King Abdulaziz University, P.O. Box 344, Rabigh 21911 (Saudi Arabia); Dhahri, E., E-mail: essebti@yahoo.com [Laboratoire de Physique Appliquée, Faculté des Sciences, Université de Sfax, BP 1171, 3000 Sfax (Tunisia); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, 38042 Grenoble (France)

    2015-01-25

    Highlights: • Rietveld refinement show that the vacancies in the A-site has not effect on the structural of the studied samples. • The synthesized samples exhibit a paramagnetic–ferromagnetic transition at T{sub c}. • The two deficient samples exhibit a semiconducting–metallic transition. • Different behaviors of MR are found: extrinsic MR for Sr deficient sample and intrinsic MR for Pr deficient one. - Abstract: Structural, magnetic and magneto-transport properties of Pr{sub 0.6}Sr{sub 0.4}MnO{sub 3}, Pr{sub 0.6}Sr{sub 0.3}□{sub 0.1}MnO{sub 3} and Pr{sub 0.5}□{sub 0.1}Sr{sub 0.4}MnO{sub 3} perovskite manganite oxides have been investigated. X-ray diffraction (XRD) analysis using Rietveld refinement has shown that all the samples under investigation crystallize in the orthorhombic structure with Pbnm space group. Strontium vacancy leads to an increase in the unit cell volume. Paramagnetic (PM) to ferromagnetic (FM) transitions have been observed in all the synthesized samples. The Curie temperature was found to be 251 K for the strontium-deficient sample, 273 K for the stoichiometric sample and 275 K for the praseodymium-deficient one. With the decrease in temperature, the two deficient samples exhibit semiconducting–metallic transitions. The resistivity decreases while T{sub ρ} increases with the change in the magnetic applied field from 0 T to 5 T. The strontium-vacancy sample has been proven to exhibit a magnetoresistance value of about 50% at 266 K at a magnetic applied field of 5 T and seems to be constant below 236 K. The praseodymium-deficient one is manifested in another form of MR which increases with the decrease in temperature. This is a clear indication of the low field magnétoresistance (LFMR) behavior.

  5. Giant Negative Magnetoresistance Driven by Spin-Orbit Coupling at the LaAlO3/SrTiO3 Interface.

    Science.gov (United States)

    Diez, M; Monteiro, A M R V L; Mattoni, G; Cobanera, E; Hyart, T; Mulazimoglu, E; Bovenzi, N; Beenakker, C W J; Caviglia, A D

    2015-07-03

    The LaAlO3/SrTiO3 interface hosts a two-dimensional electron system that is unusually sensitive to the application of an in-plane magnetic field. Low-temperature experiments have revealed a giant negative magnetoresistance (dropping by 70%), attributed to a magnetic-field induced transition between interacting phases of conduction electrons with Kondo-screened magnetic impurities. Here we report on experiments over a broad temperature range, showing the persistence of the magnetoresistance up to the 20 K range--indicative of a single-particle mechanism. Motivated by a striking correspondence between the temperature and carrier density dependence of our magnetoresistance measurements we propose an alternative explanation. Working in the framework of semiclassical Boltzmann transport theory we demonstrate that the combination of spin-orbit coupling and scattering from finite-range impurities can explain the observed magnitude of the negative magnetoresistance, as well as the temperature and electron density dependence.

  6. Resonant tunnel magnetoresistance in a double magnetic tunnel junction

    KAUST Repository

    Useinov, Arthur

    2011-08-09

    We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.© Springer Science+Business Media, LLC 2011.

  7. Magnetoresistance anomalies in ultra-thin granular YBa2Cu3O7−δ bridges

    International Nuclear Information System (INIS)

    Levi, D.; Shaulov, A.; Koren, G.; Yeshurun, Y.

    2013-01-01

    Highlights: •Negative magnetoresistance slope in the Tesla regime is observed at low temperatures. •Phase slips explains the observed magnetoresistance at high temperatures. •Quasiparticles tunneling explains the negative slope. -- Abstract: We report on magnetoresistance measurements in 10 nm thick and submicron-wide granular YBa 2 Cu 3 O 7−δ bridges. The results show a strong dependence of the resistance on the magnetic field at low fields crossing over to a relatively weak field dependence at high fields. The field derivative of the resistance at high fields decreases as the temperature is lowered and eventually changes sign, exhibiting a negative slope in a wide field range in the Tesla regime. This negative slope is sensitive to the bias current, turning to be positive as the bias current increases. This complex magnetoresistance behavior is attributed to both phase slips in a distribution of strongly and weakly linked superconducting grains, and tunneling of quasiparticles between grains. The latter dominates at low temperatures and high fields, giving rise to the negative magnetoresistance slope

  8. Dependence of black fragment azimuthal and projected angular distributions on polar angle in silicon-emulsion collisions at 4.5A GeV/c

    International Nuclear Information System (INIS)

    Liu Fuhu; Abd Allah, Nabil N.; Singh, B.K.

    2004-01-01

    The experimental results of dependence of black fragment azimuth (φ) and projected angle (ψ) distributions on polar angle θ in silicon-emulsion collisions at 4.5A GeV/c (the Dubna momentum) are reported. There are two regions of enhancement around φ=±90 deg. for different θ ranges. These enhancements are due to directed (v 1 ) and elliptic (v 2 ) flows. The v 1 and v 2 dependence of values on θ shows that the directed flow is weak and the elliptic flow is strong in these collisions. A multisource ideal gas model is used to describe the experimental results of dependence. The Monte Carlo calculated results are approximately in agreement with the experimental data

  9. Mobility controlled linear magnetoresistance with 3D anisotropy in a layered graphene pallet

    KAUST Repository

    Zhang, Qiang

    2016-09-27

    A bulk sample of pressed graphene sheets was prepared under hydraulic pressure (similar to 150 MPa). The cross-section of the sample demonstrates a layered structure, which leads to 3D electrical transport properties with anisotropic mobility. The electrical transport properties of the sample were measured over a wide temperature (2-400 K) and magnetic field (-140 kOe <= H <= 140 kOe) range. The magnetoresistance measured at a fixed temperature can be described by R(H, theta) = R(epsilon H-theta, 0) with epsilon(theta) =(cos(2)theta + gamma(-2) sin(2)theta)(1/2), where gamma is the mobility anisotropy constant and theta is the angle between the normal of the sample plane and the magnetic field. The large linear magnetoresistance (up to 36.9% at 400 K and 140 kOe) observed at high fields is ascribed to a classical magnetoresistance caused by mobility fluctuation (Delta mu). The magnetoresistance value at 140 kOe was related to the average mobility () because of the condition Delta mu < . The carrier concentration remained constant and the temperature-dependent resistivity was proportional to the average mobility, as verified by Kohler\\'s rule. Anisotropic dephasing length was deduced from weak localization observed at low temperatures.

  10. Fractional modeling of the AC large-signal frequency response in magnetoresistive current sensors.

    Science.gov (United States)

    Ravelo Arias, Sergio Iván; Ramírez Muñoz, Diego; Moreno, Jaime Sánchez; Cardoso, Susana; Ferreira, Ricardo; de Freitas, Paulo Jorge Peixeiro

    2013-12-17

    Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n, but additionally, of the fractional order α is an example of a great number of systems where its input-output behavior could be more exactly modeled by a fractional behavior. Following this aim, the present work shows the experimental ac large-signal frequency response of a family of electrical current sensors based in different spintronic conduction mechanisms. Using an ac characterization set-up the sensor transimpedance function Z(t)(JF) is obtained considering it as the relationship between sensor output voltage and input sensing current, Z(t)(jf)= V(o, sensor)(jf)/I(sensor)(jf). The study has been extended to various magnetoresistance sensors based in different technologies like anisotropic magnetoresistance (AMR), giant magnetoresistance (GMR), spin-valve (GMR-SV) and tunnel magnetoresistance (TMR). The resulting modeling shows two predominant behaviors, the low-pass and the inverse low-pass with fractional index different from the classical integer response. The TMR technology with internal magnetization offers the best dynamic and sensitivity properties opening the way to develop actual industrial applications.

  11. Fractional Modeling of the AC Large-Signal Frequency Response in Magnetoresistive Current Sensors

    Directory of Open Access Journals (Sweden)

    Sergio Iván Ravelo Arias

    2013-12-01

    Full Text Available Fractional calculus is considered when derivatives and integrals of non-integer order are applied over a specific function. In the electrical and electronic domain, the transfer function dependence of a fractional filter not only by the filter order n, but additionally, of the fractional order α is an example of a great number of systems where its input-output behavior could be more exactly modeled by a fractional behavior. Following this aim, the present work shows the experimental ac large-signal frequency response of a family of electrical current sensors based in different spintronic conduction mechanisms. Using an ac characterization set-up the sensor transimpedance function  is obtained considering it as the relationship between sensor output voltage and input sensing current,[PLEASE CHECK FORMULA IN THE PDF]. The study has been extended to various magnetoresistance sensors based in different technologies like anisotropic magnetoresistance (AMR, giant magnetoresistance (GMR, spin-valve (GMR-SV and tunnel magnetoresistance (TMR. The resulting modeling shows two predominant behaviors, the low-pass and the inverse low-pass with fractional index different from the classical integer response. The TMR technology with internal magnetization offers the best dynamic and sensitivity properties opening the way to develop actual industrial applications.

  12. Peculiarities of magnetoresistance in InSb whiskers at cryogenic temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Druzhinin, A., E-mail: druzh@polynet.lviv.ua [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland); Ostrovskii, I.; Khoverko, Yu. [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland); Liakh-Kaguy, N.; Khytruk, I. [Lviv Polytechnic National University, Bandera Str., 12, 79013 Lviv (Ukraine); Rogacki, K. [International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, Wroclaw (Poland)

    2015-12-15

    Highlights: • Magnetoresistance in InSb whiskers with impurity concentration near MIT is studied. • SdH oscillations of transverse and longitudinal magnetoresistance are examined. • Mechanisms of electron scattering are determined • Main crystal parameters of InSb whiskers are determined. - Abstract: The study of the magnetoresistance in InSb whiskers with an impurity concentration in the vicinity to the metal-insulator phase transition, at low temperature range 4.2–77 K, and in fields, with induction up to 14 T, was conducted. The presence of Shubnikov-de Haas oscillations in both transverse and longitudinal magnetoresistance was observed. The following parameters of InSb whiskers were defined: period of oscillations 0.1 T{sup −1}, cyclotron effective mass of electrons m{sub c} ≈ 0.14m{sub o,} concentration of charge carriers 2.3 × 10{sup 17} cm{sup −3}, g-factor g{sup *} ≈ 30 and Dingle temperature T{sub D} = 14.5 K. To determine the nature of crystal defects, the electron scattering processes on the short-range potential, caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain centers and ionized impurities in n-InSb whiskers, with defect concentration 2.9 × 10{sup 17} cm{sup −3}, are considered. The temperature dependences of electron mobility in the range 4.2–500 K were calculated.

  13. Study of angular dependence of exchange bias and misalignment in uniaxial and unidirectional anisotropy in NiFe(111)/FeMn(111)/CoFeB(amorphous) stack

    International Nuclear Information System (INIS)

    Singh, Braj Bhusan; Chaudhary, Sujeet

    2015-01-01

    We report the investigation of the in-plane azimuthal angular dependence of the magnetization reversal in the ion beam sputtered exchanged biased NiFe(111)/FeMn(111)/CoFeB(amorphous) stack. Compared to the as-deposited case, the magnetic annealing resulted in 3 fold enhancement in exchange bias but decrease in coercivity. The observed cosine dependence of exchange biased CoFeB layer on the in-plane azimuthal angle of applied field is corroborated with Meiklejohn and Bean model. The training effect associated with the exchange bias showed unconventional increase in coercivity after first cycle of hysteresis loop, while the exchange bias decreases sharply, and for subsequent cycles the exchange bias follows the empirical relation based on the energy dissipation in the AF layer. The ferromagnetic resonance (FMR) measurements also exhibited the in-plane azimuthal angle dependence of the magnetic resonance field indicating that the uniaxial and unidirectional anisotropies are not collinear, although they lie in the same plane. However, no misalignment between the unidirectional anisotropy and the exchange bias direction is observed. The misalignment angle between the uniaxial and unidirectional anisotropy, as measured by FMR, is found to be 10° and 14° for CoFeB and NiFe, respectively. This misalignment is attributed to the interface roughness as revealed by x-ray reflectance measurements. - Highlights: • In-plane azimuthal angular dependence of the magnetization reversal in the ion beam sputtered exchanged biased NiFe(111)/FeMn(111)/ CoFeB(amorphous) stack. • The observed cosine dependence of exchange biased CoFeB layer on the in-plane azimuthal angle of applied field is corroborated with Meiklejohn and Bean model. • In-plane azimuthal angle dependence of the magnetic resonance field indicates that the uniaxial and unidirectional anisotropies are not collinear, although they lie in the same plane. • The misalignment angle between the uniaxial and

  14. Tunnel magnetoresistance and linear conductance of double quantum dots strongly coupled to ferromagnetic leads

    Energy Technology Data Exchange (ETDEWEB)

    Weymann, Ireneusz, E-mail: weymann@amu.edu.pl [Faculty of Physics, Adam Mickiewicz University, 61-614 Poznań (Poland)

    2015-05-07

    We analyze the spin-dependent linear-response transport properties of double quantum dots strongly coupled to external ferromagnetic leads. By using the numerical renormalization group method, we determine the dependence of the linear conductance and tunnel magnetoresistance on the degree of spin polarization of the leads and the position of the double dot levels. We focus on the transport regime where the system exhibits the SU(4) Kondo effect. It is shown that the presence of ferromagnets generally leads the suppression of the linear conductance due to the presence of an exchange field. Moreover, the exchange field gives rise to a transition from the SU(4) to the orbital SU(2) Kondo effect. We also analyze the dependence of the tunnel magnetoresistance on the double dot levels' positions and show that it exhibits a very nontrivial behavior.

  15. An automatic measuring system for mapping of spectral and angular dependence of direct and diffuse solar radiation; Et automatisk maalesystem for kartlegging av vinkel- og spektralfordeling av direkte og diffus solstraaling

    Energy Technology Data Exchange (ETDEWEB)

    Grandum, Oddbjoern

    1997-12-31

    In optimizing solar systems, it is necessary to know the spectral and angular dependence of the radiation. The general nonlinear character of most solar energy systems accentuates this. This thesis describes a spectroradiometer that will measure both the direct component of the solar radiation and the angular dependence of the diffuse component. Radiation from a selected part of the sky is transported through a movable set of tube sections on to a stationary set of three monochromators with detectors. The beam transport system may effectively be looked upon as a single long tube aimed at a particular spot in the sky. The half value of the effective opening angle is 1.3{sup o} for diffuse radiation and 2.8{sup o} for direct radiation. The whole measurement process is controlled and operated by a PC and normally runs without manual attention. The instrument is built into a caravan. The thesis describes in detail the experimental apparatus, calibration and measurement accuracies. To map the diffuse radiation, one divides the sky into 26 sectors of equal solid angle. A complete measurement cycle is then made at a random point within each sector. These measurements are modelled by fitting to spherical harmonics, enforcing symmetry around the solar direction and the horizontal plane. The direct radiation is measured separately. Also the circumsolar sector is given special treatment. The measurements are routinely checked against global radiation measured in parallel by a standard pyranometer, and direct solar radiation by a pyrheliometer. An extensive improvement programme is being planned for the instrument, including the use of a photomultiplier tube to measure the UV part of the spectrum, a diode array for the 400-1100 nm range, and use of a Ge diode for the 1000-1900 nm range. 78 refs., 90 figs., 31 tabs.

  16. Dynamical Model of Fission Fragment Angular Distribution

    Science.gov (United States)

    Drozdov, V. A.; Eremenko, D. O.; Fotina, O. V.; Platonov, S. Yu.; Yuminov, O. A.; Giardina, G.; Taccone, A.

    2002-01-01

    A dynamical model of fission fragment angular distributions is suggested. The model allows one to calculate fission fragment angular distributions, prescission light particle multyplicities, evaporation residue cross sections etc. for the cases of decay of hot and rotating heavy nuclei. The experimental data on angular anisotropies of fission fragments and prescission neutron multiplicities are analyzed for the 16O + 208Pb, 232Th, 248Cm and 238U reactions at the energies of the incident 16O ions ranging from 90 to 160 MeV. This analysis allows us to extract both the nuclear friction coefficient value and the relaxation time for the tilting mode. It is also demonstrated that the angular distributions are sensitive to the deformation dependence of the nuclear friction.

  17. Giant magnetoresistance in CrFeMn alloys

    International Nuclear Information System (INIS)

    Xu, W.M.; Zheng, P.; Chen, Z.J.

    1997-01-01

    The electrical resistance and longitudinal magnetoresistance of Cr 75 (Fe x Mn 1-x ) 25 alloys, x=0.64, 0.72, are studied in the temperature range 1.5-270 K in applied field up to 7.5 T. The magnetoresistance is negative and strongly correlated with the spin reorientation. In the temperature range where the antiferromagnetic and ferromagnetic domains coexist, the samples display giant magnetoresistance which follows a H n -law at high field. (orig.)

  18. Semiclassical theory of magnetoresistance in positionally disordered organic semiconductors

    Science.gov (United States)

    Harmon, N. J.; Flatté, M. E.

    2012-02-01

    A recently introduced percolative theory of unipolar organic magnetoresistance is generalized by treating the hyperfine interaction semiclassically for an arbitrary hopping rate. Compact analytic results for the magnetoresistance are achievable when carrier hopping occurs much more frequently than the hyperfine field precession period. In other regimes the magnetoresistance can be straightforwardly evaluated numerically. Slow and fast hopping magnetoresistance are found to be uniquely characterized by their line shapes. We find that the threshold hopping distance is analogous a phenomenological two-site model's branching parameter, and that the distinction between slow and fast hopping is contingent on the threshold hopping distance.

  19. Magnetoresistance effect in permalloy nanowires with various types of notches

    Science.gov (United States)

    Gao, Y.; You, B.; Wang, J.; Yuan, Y.; Wei, L. J.; Tu, H. Q.; Zhang, W.; Du, J.

    2018-05-01

    Suppressing the stochastic domain wall (DW) motion in magnetic nanowires is of great importance for designing DW-related spintronic devices. In this work, we have investigated the pinning/depinning processes of DWs in permalloy nanowires with three different types of notches by using longitudinal magnetoresistance (MR) measurement. The averaged MR curves demonstrate that the stochastic DW depinning is suppressed partly or even completely by a transversely asymmetric notch. The single-shot MR curves show that how the resistance changes with the applied field also depends strongly on the notch type while the DW is pinned around the notch. In the case of two depinning fields, larger (smaller) change of resistance always corresponds to larger (smaller) depinning field, regardless of the notch type. These phenomena can be understood by that the spin structure around the notch changes differently with the notch type when the DW is traveling through the notch.

  20. Even-odd effects in magnetoresistance of ferromagnetic domain walls

    Science.gov (United States)

    Dzero, M.; Gor'kov, L. P.; Zvezdin, A. K.; Zvezdin, K. A.

    2003-03-01

    The difference in the density of states for the spin’s majority and minority bands in a ferromagnet changes the electrostatic potential along the domains, introducing discontinuities of the potential at domain boundaries. The value of the discontinuity oscillates with the number of domains. Discontinuity depends on the positions of domain walls, their motion, or the collapse of domain walls in applied magnetic field. Large values of the magnetoresistance are explained in terms of spin accumulation. We suggest a type of domain wall in nanowires made of itinerant ferromagnets, in which the magnetization vector changes without rotation. The absence of transverse magnetization components allows considerable spin accumulation, assuming the spin relaxation length LS is large enough.

  1. Extremely large magnetoresistance and electronic structure of TmSb

    Science.gov (United States)

    Wang, Yi-Yan; Zhang, Hongyun; Lu, Xiao-Qin; Sun, Lin-Lin; Xu, Sheng; Lu, Zhong-Yi; Liu, Kai; Zhou, Shuyun; Xia, Tian-Long

    2018-02-01

    We report the magnetotransport properties and the electronic structure of TmSb. TmSb exhibits extremely large transverse magnetoresistance and Shubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field. Interestingly, the split of Fermi surfaces induced by the nonsymmetric spin-orbit interaction has been observed from SdH oscillation. The analysis of the angle-dependent SdH oscillation illustrates the contribution of each Fermi surface to the conductivity. The electronic structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrates a gap at the X point and the absence of band inversion. Combined with the trivial Berry phase extracted from SdH oscillation and the nearly equal concentrations of electron and hole from Hall measurements, it is suggested that TmSb is a topologically trivial semimetal and the observed XMR originates from the electron-hole compensation and high mobility.

  2. Theoretical Prediction of a Giant Anisotropic Magnetoresistance in Carbon Nanoscrolls.

    Science.gov (United States)

    Chang, Ching-Hao; Ortix, Carmine

    2017-05-10

    Snake orbits are trajectories of charge carriers curving back and forth that form at an interface where either the magnetic field direction or the charge carrier type are inverted. In ballistic samples, their presence is manifested in the appearance of magnetoconductance oscillations at small magnetic fields. Here we show that signatures of snake orbits can also be found in the opposite diffusive transport regime. We illustrate this by studying the classical magnetotransport properties of carbon tubular structures subject to relatively weak transversal magnetic fields where snake trajectories appear in close proximity to the zero radial field projections. In carbon nanoscrolls, the formation of snake orbits leads to a strongly directional dependent positive magnetoresistance with an anisotropy up to 80%.

  3. Molecular beam epitaxy of single crystal colossal magnetoresistive material

    International Nuclear Information System (INIS)

    Eckstein, J.N.; Bozovic, I.; Rzchowski, M.; O'Donnell, J.; Hinaus, B.; Onellion, M.

    1996-01-01

    The authors have grown films of (LaSr)MnO 3 (LSMO) and (LaCa)MnO 3 (LCMO) using atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Depending on growth conditions, substrate lattice constant and the exact cation stoichiometry, the films are either pseudomorphic or strain relaxed. The pseudomorphic films show atomically flat surfaces, with a unit cell terrace structure that is a replica of that observed on the slightly vicinal substrates, while the strain relaxed films show bumpy surfaces correlated with a dislocation network. All films show tetragonal structure and exhibit anisotropic magnetoresistance, with a low field response, (1/R)(dR/dH) as large as 5 T -1

  4. Tunneling magnetoresistance in ferromagnetic planar hetero-nanojunctions

    KAUST Repository

    Useinov, Arthur

    2010-05-03

    We present a theoretical study of the tunneling magnetoresistance (TMR) in nanojunctions between non-identical ferromagnetic metals in the framework of the quasiclassical approach. The lateral size of a dielectric oxide layer, which is considered as a tunneling barrier between the metallic electrodes, is comparable with the mean-free path of electrons. The dependence of the TMR on the bias voltage, physical parameters of the dielectric barrier, and spin polarization of the electrodes is studied. It is demonstrated that a simple enough theory can give high TMR magnitudes of several hundred percent at bias voltages below 0.5 V. A qualitative comparison with the available experimental data is given. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers.

    Science.gov (United States)

    Kim, Dong-Jun; Jeon, Chul-Yeon; Choi, Jong-Guk; Lee, Jae Wook; Surabhi, Srivathsava; Jeong, Jong-Ryul; Lee, Kyung-Jin; Park, Byong-Guk

    2017-11-09

    Electric generation of spin current via spin Hall effect is of great interest as it allows an efficient manipulation of magnetization in spintronic devices. Theoretically, pure spin current can be also created by a temperature gradient, which is known as spin Nernst effect. Here, we report spin Nernst effect-induced transverse magnetoresistance in ferromagnet/non-magnetic heavy metal bilayers. We observe that the magnitude of transverse magnetoresistance in the bilayers is significantly modified by heavy metal and its thickness. This strong dependence of transverse magnetoresistance on heavy metal evidences the generation of thermally induced pure spin current in heavy metal. Our analysis shows that spin Nernst angles of W and Pt have the opposite sign to their spin Hall angles. Moreover, our estimate implies that the magnitude of spin Nernst angle would be comparable to that of spin Hall angle, suggesting an efficient generation of spin current by the spin Nernst effect.

  6. Magnetocaloric and magnetoresistive properties of La0.67Ca0.33-xSrxMnO3

    DEFF Research Database (Denmark)

    Dinesen, Anders Reves

    This thesis presents results of an experimental investigation of magneto-caloric and magnetoresistive properties of a series of polycrystalline Ca- and Sr-doped lanthanum manganites, La0.67Ca0.33-xSrxMnO3 (0=x=0.33 ), with the perovskite structure. The samples consisted of sintered oxide powders...... a magnetocaloric effect comparable to that of Gadolinium, the prototypical working material for magnetic refrigeration at room temperature. A less comprehensive part of the investigation regarded the magnetoresistive properties of the La0.67Ca0.33-xSrxMnO3 system. It was found that the polycrystalline nature...... of the compounds played a decisive role for the magnetotransport properties. Characteristic grain boundary effects, such as a low-field magnetoresistance, which is absent in single-crystalline perovskites, were observed. The low-field effect is usually ascribed to spin-dependent scattering in grain boundaries...

  7. Study of domain wall propagation in nanostructured CoPt multilayers by using antisymmetric magnetoresistance

    International Nuclear Information System (INIS)

    Rodriguez-Rodriguez, G; Perez-Junquera, A; Hierro-Rodriguez, A; Montenegro, N; Alameda, J M; Velez, M; Menendez, J L; Ravelosona, D

    2010-01-01

    Domain wall propagation has been studied in perpendicular anisotropy CoPt multilayers patterned by e-beam lithography into 5 μm wide wires. Positive and negative peaks appear in time resolved magnetoresistance curves, associated to the different directions of domain wall propagation along the wires. The field dependence of domain wall velocity is well described by a creep model of a 1D wall in the presence of weak disorder with critical exponent μ=1/4.

  8. Extraordinary Magnetoresistance Effect in Semiconductor/Metal Hybrid Structure

    KAUST Repository

    Sun, Jian

    2013-06-27

    In this dissertation, the extraordinary magnetoresistance (EMR) effect in semiconductor/metal hybrid structures is studied to improve the performance in sensing applications. Using two-dimensional finite element simulations, the geometric dependence of the output sensitivity, which is a more relevant parameter for EMR sensors than the magnetoresistance (MR), is studied. The results show that the optimal geometry in this case is different from the geometry reported before, where the MR ratio was optimized. A device consisting of a semiconductor bar with length/width ratio of 5~10 and having only 2 contacts is found to exhibit the highest sensitivity. A newly developed three-dimensional finite element model is employed to investigate parameters that have been neglected with the two dimensional simulations utilized so far, i.e., thickness of metal shunt and arbitrary semiconductor/metal interface. The simulations show the influence of those parameters on the sensitivity is up to 10 %. The model also enables exploring the EMR effect in planar magnetic fields. In case of a bar device, the sensitivity to planar fields is about 15 % to 20 % of the one to perpendicular fields. 5 A “top-contacted” structure is proposed to reduce the complexity of fabrication, where neither patterning of the semiconductor nor precise alignment is required. A comparison of the new structure with a conventionally fabricated device shows that a similar magnetic field resolution of 24 nT/√Hz is obtained. A new 3-contact device is developed improving the poor low-field sensitivity observed in conventional EMR devices, resulting from its parabolic magnetoresistance response. The 3-contact device provides a considerable boost of the low field response by combining the Hall effect with the EMR effect, resulting in an increase of the output sensitivity by 5 times at 0.01 T compared to a 2-contact device. The results of this dissertation provide new insights into the optimization of EMR devices

  9. Stripe domains and magnetoresistance in thermally deposited nickel films

    International Nuclear Information System (INIS)

    Sparks, P.D.; Stern, N.P.; Snowden, D.S.; Kappus, B.A.; Checkelsky, J.G.; Harberger, S.S.; Fusello, A.M.; Eckert, J.C.

    2004-01-01

    We report a study of the domain structure and magnetoresistance of thermally deposited nickel films. For films thicker than 17 nm, we observe striped domains with period varying with film thickness as a power law with exponent 0.21±0.02 up to 120 nm thickness. There is a negative magnetoresistance for fields out of the plane

  10. Study of magnetoresistance and conductance of bicrystal grain ...

    Indian Academy of Sciences (India)

    at ferromagnetic transition temperature [4,5]. From a practical point of view, large mag- ... tics of these microbridges were studied using four-probe technique. For magnetoresistance measurements, magnetic field has been applied in the plane of the film, parallel to the grain boundary. Magnetoresistance ratio (MRR) has ...

  11. Colossal Magnetoresistance in La-Y-Ca-Mn-O Films

    NARCIS (Netherlands)

    Chen, L.H.; Tiefel, T.H.; Jin, S.; Palstra, T.T.M.; Ramesh, R.; Kwon, C.

    1996-01-01

    Magnetoresistance behavior of La0.60Y0.07CaMnOx, thin films epitaxially grown on LaAlO3 has been investigated. The films exhibit colossal magnetoresistance with the MR ratio in excess of 10^8% at ~60K, H = 7T, which is the highest ever reported for thin film manganites. The partial substitution of

  12. Single nucleotide polymorphism (SNP) detection on a magnetoresistive sensor

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Østerberg, Frederik Westergaard; Dufva, Martin

    2013-01-01

    We present a magnetoresistive sensor platform for hybridization assays and demonstrate its applicability on single nucleotide polymorphism (SNP) genotyping. The sensor relies on anisotropic magnetoresistance in a new geometry with a local negative reference and uses the magnetic field from the se...

  13. Tunneling anisotropic magnetoresistance: A spin-valve-like tunnel magnetoresistance using a single magnetic layer

    Czech Academy of Sciences Publication Activity Database

    Gould, C.; Rüster, C.; Jungwirth, Tomáš; Girgis, E.; Schott, G. M.; Giraud, R.; Brunner, K.; Schmidt, G.; Molenkamp, L. W.

    2004-01-01

    Roč. 93, č. 11 (2004), 117203/1-117203/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : semiconductor spintronics * tunneling anisotropic magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.218, year: 2004

  14. Large magnetoresistance effect in nitrogen-doped silicon

    Directory of Open Access Journals (Sweden)

    Tao Wang

    2017-05-01

    Full Text Available In this work, we reported a large magnetoresistance effect in silicon by ion implantation of nitrogen atoms. At room temperature, the magnetoresistance of silicon reaches 125 % under magnetic field 1.7 T and voltage bias -80 V. By applying an alternating magnetic field with a frequency (f of 0.008 Hz, we find that the magnetoresistance of silicon is divided into f and 2f two signal components, which represent the linear and quadratic magnetoresistance effects, respectively. The analysis based on tuning the magnetic field and the voltage bias reveals that electric-field-induced space-charge effect plays an important role to enhance both the linear and quadratic magnetoresistance effects. Observation as well as a comprehensive explanation of large MR in silicon, especially based on semiconductor CMOS implantation technology, will be an important progress towards magnetoelectronic applications.

  15. Electrically tuned magnetic order and magnetoresistance in a topological insulator.

    Science.gov (United States)

    Zhang, Zuocheng; Feng, Xiao; Guo, Minghua; Li, Kang; Zhang, Jinsong; Ou, Yunbo; Feng, Yang; Wang, Lili; Chen, Xi; He, Ke; Ma, Xucun; Xue, Qikun; Wang, Yayu

    2014-09-15

    The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investigate the transport properties of a ferromagnetic topological insulator thin film fabricated into a field effect transistor device. We observe a complex evolution of gate-tuned magnetoresistance, which is positive when the Fermi level lies close to the Dirac point but becomes negative at higher energies. This trend is opposite to that expected from the Berry phase picture, but is intimately correlated with the gate-tuned magnetic order. The underlying physics is the competition between the topology-induced weak antilocalization and magnetism-induced negative magnetoresistance. The simultaneous electrical control of magnetic order and magnetoresistance facilitates future topological insulator based spintronic devices.

  16. Spin Hall magnetoresistance in an ultrathin Co{sub 2}FeAl system

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yan-qing [Shanghai Key Laboratory of Special Artificial Microstructure and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Fu, Hua-rui [School of Materials Science and Engineering, Xi' an University of Technology, Xi' an 710048 (China); Sun, Niu-yi; Che, Wen-ru [Shanghai Key Laboratory of Special Artificial Microstructure and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Ding, Ding [School of Materials Science and Engineering, Shanghai University, Shanghai 20044 (China); Qin, Juan, E-mail: juan_qin@staff.shu.edu.cn [School of Materials Science and Engineering, Shanghai University, Shanghai 20044 (China); You, Cai-yin, E-mail: caiyinyou@xaut.edu.cn [School of Materials Science and Engineering, Xi' an University of Technology, Xi' an 710048 (China); Shan, Rong, E-mail: shan.rong@hotmail.com [Shanghai Key Laboratory of Special Artificial Microstructure and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhu, Zhen-gang [School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049 (China)

    2016-08-01

    Spin Hall magnetoresistance (SMR) is observed in an ultrathin Co{sub 2}FeAl layer covered by a thin Pt film. The Co{sub 2}FeAl layer grown on a MgO substrate should be too thin to be continuous. The result reveals that the magnetic insulator layer, such as yttrium iron garnet (YIG) substrate which is frequently used so far, is actually not a requisite for the observation of SMR. This work may greatly help to understand the true nature of SMR effect. - Highlights: • Spin Hall magnetoresistance (SMR) is observed in an ultrathin Co{sub 2}FeAl layer covered by a thin Pt film. • Using a phenomenological model, angle dependences of SMR are derived which are coincident with both reported and our results very well. • Magnetic insulator layer is not a requisite for the observation of SMR.

  17. Comparative study of radiation-induced magnetoresistance oscillations in MBE material from different sources

    Science.gov (United States)

    Mani, Ramesh; Wegscheider, Werner; Umansky, Vladimir

    2009-11-01

    Transport studies of GaAs/AlGaAs electron systems have shown microwave- and terahertz- radiation-induced, large amplitude, periodic-in-the-inverse-magnetic-field, magnetoresistance oscillations that saturate into novel radiation-induced zero- resistance states (RIZRS) at the lowest temperatures.[1] The origin of these RIZRS remains an open topic for further experimental investigation, as does the dependence of these phenomena on the impurity configuration and the material quality. It remains to be understood if similar material prepared in different laboratories yield a similar response. In addressing this issue, we examine here the radiation-induced magnetoresistance oscillations in GaAs/AlGaAs material prepared by W. Wegscheider and co-workers, and compare the results to our own previous results obtained on specimens prepared by V. Umansky and co-workers. [4pt] [1] R. G. Mani, W. B. Johnson, V. Umansky, V. Narayanamurti, and K. Ploog, Phys. Rev. B 79, 205320 (2009).

  18. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    KAUST Repository

    Zhang, Y.

    2016-07-20

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  19. Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions with asymmetric barriers.

    Science.gov (United States)

    Wang, Jing; Huang, Qikun; Shi, Peng; Zhang, Kun; Tian, Yufeng; Yan, Shishen; Chen, Yanxue; Liu, Guolei; Kang, Shishou; Mei, Liangmo

    2017-10-26

    The development of multifunctional spintronic devices requires simultaneous control of multiple degrees of freedom of electrons, such as charge, spin and orbit, and especially a new physical functionality can be realized by combining two or more different physical mechanisms in one specific device. Here, we report the realization of novel tunneling rectification magnetoresistance (TRMR), where the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated in Co/CoO-ZnO/Co magnetic tunneling junctions with asymmetric tunneling barriers. Moreover, by simultaneously applying direct current and alternating current to the devices, the TRMR has been remarkably tuned in the range from -300% to 2200% at low temperature. This proof-of-concept investigation provides an unexplored avenue towards electrical and magnetic control of charge and spin, which may apply to other heterojunctions to give rise to more fascinating emergent functionalities for future spintronics applications.

  20. Magnetoresistance of drop-cast film of cobalt-substituted magnetite nanocrystals.

    Science.gov (United States)

    Kohiki, Shigemi; Nara, Koichiro; Mitome, Masanori; Tsuya, Daiju

    2014-10-22

    An oleic acid-coated Fe2.7Co0.3O4 nanocrystal (NC) self-assembled film was fabricated via drop casting of colloidal particles onto a three-terminal electrode/MgO substrate. The film exhibited a large coercivity (1620 Oe) and bifurcation of the zero-field-cooled and field-cooled magnetizations at 300 K. At 10 K, the film exhibited both a Coulomb blockade due to single electron charging as well as a magnetoresistance of ∼-80% due to spin-dependent electron tunneling. At 300 K, the film also showed a magnetoresistance of ∼-80% due to hopping of spin-polarized electrons. Enhanced magnetic coupling between adjacent NCs and the large coercivity resulted in a large spin-polarized current flow even at 300 K.

  1. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  2. Low-magnetic field, room-temperature colossal magnetoresistance in manganite thin films

    Science.gov (United States)

    Robson, Marcia Christine

    La0.7Ba0.3MnO 3 thin films when the lattice mismatch strain in the film decreased. In addition, as the crystalline quality and the magnetic homogeneity of the thin films increased, the microwave magnetoresistance also increased. The decrease of the lattice mismatch strain in the manganite thin films ultimately led to an increase in the low magnetic field, room temperature magnetoresistance. However, this enhancement was minimal, so artificial grain boundaries in the form of interfaces in manganite spin valves and spin dependent tunneling junctions were introduced. However, no room temperature, low magnetic field magnetoresistance was observed in either device, due to the decrease of the manganite spin polarization with increasing temperature, the occurrence of spin flip scattering events at defect sites in the multilayer structure, and reorganization of the magnetization at the interfaces. (Abstract shortened by UMI.)

  3. Magnetoresistance and Curie temperature of GaAs semiconductor doped with Mn ions

    International Nuclear Information System (INIS)

    Yalishev, V.Sh.

    2006-02-01

    Key words: diluted magnetic semiconductors, magnetoresistance, ferromagnetism, ionic implantation, molecular-beam epitaxy, magnetic clusters, Curie temperature. Subjects of the inquiry: Diluted magnetic semiconductor GaAs:Mn. Aim of the inquiry: determination of the possibility of the increase of Curie temperature in diluted magnetic semiconductors based on GaAs doped with Mn magnetic impurity. Method of inquiry: superconducting quantum interference device (SQUID), Hall effect, magnetoresistance, atomic and magnetic force microscopes. The results achieved and their novelty: 1. The effect of the additional doping of Ga 0,965 Mn 0,035 As magnetic epitaxial layers by nonmagnetic impurity of Be on on the Curie temperature was revealed. 2. The exchange interaction energy in the investigated Ga 0,965 Mn 0,035 As materials was determined by the means of the magnetic impurity dispersion model from the temperature dependence of the resistivity measurements. 3. The effect of magnetic clusters dimensions and illumination on the magnetoresistance of GaAs materials containing nano-dimensional magnetic clusters was studied for the first time. Practical value: Calculated energy of the exchange interaction between local electrons of magnetic ions and free holes in Ga 1-x Mn x As magnetic semiconductors permitted to evaluate the theoretical meaning of Curie temperature depending on concentration of free holes and to compare it with experimental data. Sphere of usage: micro- and nano-electronics, solid state physics, physics of semiconductors, magnetic materials physics, spin-polarized current sources. (author)

  4. Theory of magnetoresistance of organic molecular tunnel junctions with nonmagnetic electrodes

    Science.gov (United States)

    Shi, Sha; Xie, Zuoti; Liu, Feilong; Smith, Darryl L.; Frisbie, C. Daniel; Ruden, P. Paul

    2017-04-01

    Large room-temperature magnetoresistance observed for devices composed of self-assembled monolayers of different oligophenylene thiols sandwiched between gold contacts has recently been reported [Z. Xie, S. Shi, F. Liu, D. L. Smith, P. P. Ruden, and C. D. Frisbie, ACS Nano 10, 8571 (2016), 10.1021/acsnano.6b03853]. The transport mechanism through the organic molecules was determined to be nonresonant tunneling. To explain this kind of magnetoresistance, we develop an analytical model based on the interaction of the tunneling charge carrier with an unpaired charge carrier populating a contact-molecule interface state. The Coulomb interaction between carriers causes the transmission coefficients to depend on their relative spin orientation. Singlet and triplet pairing of the tunneling and the interface carriers thus correspond to separate conduction channels with different transmission probabilities. Spin relaxation enabling transitions between the different channels, and therefore tending to maximize the tunneling current for a given applied bias, can be suppressed by relatively small magnetic fields, leading to large magnetoresistance. Our model elucidates how the Coulomb interaction gives rise to transmission probabilities that depend on spin and how an applied magnetic field can inhibit transitions between different spin configurations.

  5. Temperature and angular momentum dependence of the ...

    Indian Academy of Sciences (India)

    [11] R Rossignoli, A Plastino and H G Miller, Phys. Rev. C43, 1599 (1991). [12] J A Sheikh, P A Ganai, R P Singh, R K Bhowmik and S Frauendorf, Phys. Rev. C77, 014303 (2008). [13] J A Sheikh and R P Singh (to be published). [14] J B French, E C Halbert, J B McGrory and S S M Wong, Advances in nuclear physics.

  6. Temperature and angular momentum dependence of the ...

    Indian Academy of Sciences (India)

    particle coupled state. The above notation is the same as that used in [14]. In the present work, the statistical averages have been calculated using the canon- ical ensemble approach since the exact solutions have well-defined particle number.

  7. Angular dependence of quartz fiber calorimeter response

    International Nuclear Information System (INIS)

    Anzivino, G.; Chamorovskii, Yu.; Contin, A.; Danilov, M.; Dellacasa, G.; DeSalvo, R.; Gavrilov, V.; Golutvin, A.; Gorodetzky, P.; Johnson, K.F.; Juillot, P.; Lacommare, G.; Lazic, D.; Litvintsev, D.; Lundin, M.; Marino, M.; Musso, A.; Ratnikov, F.; Rusinov, V.; Stolin, V.; Vinogradov, M.

    1995-01-01

    A small quartz fiber calorimeter prototype with copper absorber has been assembled and tested at ITEP as a first test of a ''0 degree'' component of the RD-40 R and D program. Calibration and monitoring of each tower response was performed using the positions of single photoelectron peaks as well as the response to minimum ionizing particles incident at an angle of 45 . The response of the prototype to 4 GeV electrons as a function of beam angle with respect to the quartz fibers was studied in the range from 0 to 90 . The test results are compared to the GEANT based Monte Carlo (MC) simulations. (orig.)

  8. Optical angular momentum and atoms.

    Science.gov (United States)

    Franke-Arnold, Sonja

    2017-02-28

    Any coherent interaction of light and atoms needs to conserve energy, linear momentum and angular momentum. What happens to an atom's angular momentum if it encounters light that carries orbital angular momentum (OAM)? This is a particularly intriguing question as the angular momentum of atoms is quantized, incorporating the intrinsic spin angular momentum of the individual electrons as well as the OAM associated with their spatial distribution. In addition, a mechanical angular momentum can arise from the rotation of the entire atom, which for very cold atoms is also quantized. Atoms therefore allow us to probe and access the quantum properties of light's OAM, aiding our fundamental understanding of light-matter interactions, and moreover, allowing us to construct OAM-based applications, including quantum memories, frequency converters for shaped light and OAM-based sensors.This article is part of the themed issue 'Optical orbital angular momentum'. © 2017 The Author(s).

  9. AngularJS directives

    CERN Document Server

    Vanston, Alex

    2013-01-01

    This book uses a practical, step-by-step approach, starting with how to build directives from the ground up before moving on to creating web applications comprised of multiple modules all working together to provide the best user experience possible.This book is intended for intermediate JavaScript developers who are looking to enhance their understanding of single-page web application development with a focus on AngularJS and the JavaScript MVC frameworks.It is expected that readers will understand basic JavaScript patterns and idioms and can recognize JSON formatted data.

  10. An investigation of manganites exhibiting colossal magnetoresistance

    CERN Document Server

    Coldea, A I

    2001-01-01

    charge-ordered regions with possible phase separation. Magnetic field-induced transitions are reported and the effect of granularity on the magnetoresistance is studied. Effects of magnetic dilution with non-magnetic Ga and Rh ions on perovskite manganites, (La/Nd) sub 2 sub - sub x Sr sub x Mn(Ga/Rh)O sub 6 , are presented in Chapter 4. The random distribution of magnetic ions on the manganese network affects both the magnetic and electrical properties. As a function of hole doping x, La sub 2 sub - sub x Sr sub x MnGaO sub 6 compounds are ferromagnetic at low doping (x 0.3) become magnetically disordered due to the frustration induced by competing ferromagnetic and antiferromagnetic interactions. The Rh dilution helps stabilize the ferromagnetic phase in La sub 1 sub . sub 5 Sr sub 0 sub . sub 5 MnRhO sub 6. All compounds are insulating due to the charge localization induced by the random potential created by the local structural and magnetic disorder. The observed magnetoresistance is discussed either in ...

  11. Angular Distribution of GRBs

    Directory of Open Access Journals (Sweden)

    L. G. Balázs

    2012-01-01

    Full Text Available We studied the complete randomness of the angular distribution of BATSE gamma-ray bursts (GRBs. Based on their durations and peak fluxes, we divided the BATSE sample into 5 subsamples (short1, short2, intermediate, long1, long2 and studied the angular distributions separately. We used three methods to search for non-randomness in the subsamples: Voronoi tesselation, minimal spanning tree, and multifractal spectra. To study any non-randomness in the subsamples we defined 13 test-variables (9 from Voronoi tesselation, 3 from the minimal spanning tree and one from the multifractal spectrum. We made Monte Carlo simulations taking into account the BATSE’s sky-exposure function. We tested therandomness by introducing squared Euclidean distances in the parameter space of the test-variables. We recognized that the short1, short2 groups deviate significantly (99.90%, 99.98% from the fully random case in the distribution of the squared Euclidean distances but this is not true for the long samples. In the intermediate group, the squared Euclidean distances also give significant deviation (98.51%.

  12. Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based magnetic tunneling junctions

    Energy Technology Data Exchange (ETDEWEB)

    Chae, Kyo-Suk [MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Samsung Electronics Co., Ltd., San #16 Banwol-dong, Hwasung-City, Gyeonggi-Do 445-701 (Korea, Republic of); Park, Jea-Gun, E-mail: parkjgL@hanyang.ac.kr [MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-04-21

    For Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd]{sub n}-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t{sub Fe}) between the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t{sub Fe} increased up to 0.4 nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd]{sub n}-SyAF. However, it abruptly decreased by further increasing t{sub Fe} in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer. Thus, the TMR ratio peaked at t{sub Fe} = 0.4 nm: i.e., 120% at 29 Ωμm{sup 2}.

  13. Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

    International Nuclear Information System (INIS)

    Zsurzsa, S.; Péter, L.; Kiss, L.F.; Bakonyi, I.

    2017-01-01

    The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (H c ) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation H c =H co +a/d n with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers. - Highlights: • Electrodeposited nanoscale Co films and Co/Cu layered structures. • Co layer thickness (d) dependence of coercivity (H c ) and magnetoresistance. • H c depends on Co layer thickness according to H c =H co +a/d n with n around 1. • The common n value suggests a similar mechanism of magnetization reversal. • The common n value suggests the absence of coupling between magnetic layers.

  14. Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Zsurzsa, S., E-mail: zsurzsa.sandor@wigner.mta.hu; Péter, L.; Kiss, L.F.; Bakonyi, I.

    2017-01-01

    The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (H{sub c}) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation H{sub c}=H{sub co}+a/d{sup n} with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers. - Highlights: • Electrodeposited nanoscale Co films and Co/Cu layered structures. • Co layer thickness (d) dependence of coercivity (H{sub c}) and magnetoresistance. • H{sub c} depends on Co layer thickness according to H{sub c}=H{sub co}+a/d{sup n} with n around 1. • The common n value suggests a similar mechanism of magnetization reversal. • The common n value suggests the absence of coupling between magnetic layers.

  15. Magnetoresistive properties of non-uniform state of antiferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Krivoruchko, V.N.

    1996-01-01

    The phenomenological model of magnetoresistive properties of magneto-non-single-phase state of alloyed magnetic semiconductors is considered using the concept derived for a description of magnetoresistive effects in layered and granular magnetic metals. By assuming that there exists a magneto-non-single state in the manganites having the perovskite structure, it is possible to describe, in the framework of above approach, large magnetoresistive effects of manganite phases with antiferromagnetic order and semiconductor-type conductivity as well as those with antiferromagnetic properties and metallic-type conductivity

  16. Colossal magnetoresistance in manganites and related prototype devices

    International Nuclear Information System (INIS)

    Liu Yu-Kuai; Yin Yue-Wei; Li Xiao-Guang

    2013-01-01

    We review colossal magnetoresistance in single phase manganites, as related to the field sensitive spin-charge interactions and phase separation; the rectifying property and negative/positive magnetoresistance in manganite/Nb:SrTiO 3 p—n junctions in relation to the special interface electronic structure; magnetoelectric coupling in manganite/ferroelectric structures that takes advantage of strain, carrier density, and magnetic field sensitivity; tunneling magnetoresistance in tunnel junctions with dielectric, ferroelectric, and organic semiconductor spacers using the fully spin polarized nature of manganites; and the effect of particle size on magnetic properties in manganite nanoparticles. (topical review - magnetism, magnetic materials, and interdisciplinary research)

  17. Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES.

    Science.gov (United States)

    Samaraweera, R L; Liu, H-C; Wang, Z; Reichl, C; Wegscheider, W; Mani, R G

    2017-07-11

    Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc . The I dc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the observed giant magnetoresistance effect even in the presence of radiation-induced magnetoresistance oscillations, the magnetoresistance oscillations do not modify the giant magnetoresistance, and the magnetoresistance oscillatory extrema, i.e., maxima and minima, disappear rather asymmetrically with increasing I dc . The results suggest the interpretation that the I dc serves to suppress scattering between states near the Fermi level in a strong magnetic field limit.

  18. Magnetoresistance and Anti-Ferromagnetic Coupling in FM-Graphene-FM Trilayers

    Science.gov (United States)

    Cobas, Enrique D.; van't Erve, Olaf M. J.; Cheng, Shu-Fan; Jonker, Berend T.

    Both high-magnetoresistance(MR) minority spin filtering and anti-ferromagnetic (AFM) coupling have been predicted for FM|Graphene|FM vertical heterostructures. Our previous experiments demonstrated ordinary magnetoresistance in NiFe-Graphene-Co heterostructures and no evident AFM coupling. Here we present experimental results that confirm both MR minority spin filtering and AFM coupling in high-quality FM|Graphene|FM heterostructures. The heterostructures were fabricated by a combination of sputtering, chemical vapor deposition and electron beam evaporation. The stack was patterned into symmetric cross-bar structures using Ar ion milling. Measurements show negative magnetoresistance in excess of 10 percent, confirming spin-filtering, and weak anti-ferromagnetic coupling throughout the temperature range 15K to 300K. The temperature dependence of the MR was studied and found consistent with thermal excitation of spin waves in the ferromagnetic electrodes. Junction resistance-area products are in the range of 10 Ωcm2. These heterostructures provide a fast and low-power magnetic field sensor in the sub-100 Oe range and are a step towards high-MR low RA-product MRAM junctions.

  19. Ballistic magnetoresistance of electrodeposited nanocontacts in thin film and micrometer wire gaps

    International Nuclear Information System (INIS)

    Garcia, N.; Cheng, H.; Wang, H.; Nikolic, N.D.; Guerrero, C.A.; Papageorgopoulos, A.C.

    2004-01-01

    In this paper, we review the recent advances and progress in ballistic magnetoresistance (BMR) in magnetic nanocontacts electrodeposited in thin films and micrometer gaps. We report the influence of magnetostriction in the measurements under different configurations and substrates, as well as the contribution of the magnetic material forming the contacts. To avoid the magnetostriction effect, we have fabricated magnetic nanocontacts in Cu wires and Cu films. Similar BMR results can be observed in these systems. Our results show that the BMR effect should depend on the microproperties of the nanocontacts and should not be related with the macroproperties of the electrodes. The magnetostriction results, measured by an atomic force microscopy system with a built-in electromagnet, clearly show that there is no direct relationship between the displacement (caused by the magnetostriction effect) and the value of BMR. In fact, we present large magnetoresistance values for permalloy, coinciding with displacements in the latter's structure less than 1 nm, which is the smallest clearly observable shift allowed by our atomic force microscope. Repetitions of hundreds of R(H) curves are presented for different materials with different coercive fields. The interpretation of the results is based on the formation of an interfacial transparent layer (non-stoichiometric oxide, sulfur, etc.) at the nanocontact where the theory can explain large magnetoresistance values

  20. Possible origin of linear magnetoresistance: Observation of Dirac surface states in layered PtBi2

    Science.gov (United States)

    Thirupathaiah, S.; Kushnirenko, Y.; Haubold, E.; Fedorov, A. V.; Rienks, E. D. L.; Kim, T. K.; Yaresko, A. N.; Blum, C. G. F.; Aswartham, S.; Büchner, B.; Borisenko, S. V.

    2018-01-01

    The nonmagnetic compounds showing extremely large magnetoresistance are attracting a great deal of research interest due to their potential applications in the field of spintronics. PtBi2 is one of such interesting compounds showing large linear magnetoresistance (MR) in both the hexagonal and pyrite crystal structure. We use angle-resolved photoelectron spectroscopy and density functional theory calculations to understand the mechanism of liner MR observed in the layered PtBi2. Our results uncover linear dispersive surface Dirac states at the Γ ¯ point, crossing the Fermi level with a node at a binding energy of ≈900 meV, in addition to the previously reported Dirac states at the M ¯ point in the same compound. We further notice from our dichroic measurements that these surface states show an asymmetric spectral intensity when measured with left and right circularly polarized light, hinting at a substantial spin polarization of the bands. Following these observations, we suggest that the linear dispersive Dirac states at the Γ ¯ and M ¯ points are likely to play a crucial role for the linear field dependent magnetoresistance recorded in this compound.

  1. High magnetoresistance at low magnetic fields in self-assembled ZnO-Co nanocomposite films.

    Science.gov (United States)

    Jedrecy, N; Hamieh, M; Hebert, C; Perriere, J

    2017-07-27

    The solid phase growth of self-assembled nanocrystals embedded in a crystalline host matrix opens up wide perspectives for the coupling of different physical properties, such as magnetic and semiconducting. In this work, we report the pulsed laser growth at room temperature of thin films composed of a dispersed array of ferromagnetic Co (0001) nanoclusters with an in-plane mono-size width of 1.3 nm, embedded in a ZnO (0001) crystalline matrix. The as-grown films lead to very high values of magnetoresistance, ranging at 9 T from -11% at 300 K to -19% at 50 K, with a steep decrease of the magnetoresistance at low magnetic fields. We establish the relationship between the magnetoresistance behavior and the magnetic response of the Co nanocluster assembly. A spin-dependent tunneling of the electrons between the Co nanoclusters through and by the semi-insulating ZnO host is achieved in our films, promising with regard to magnetic field sensors or Si-integrated spintronic devices. The effects of thermal annealing are also discussed.

  2. Modification of magnetoresistance and magnetic properties of Ni thin films by adding Dy interlayer

    Science.gov (United States)

    Vorobiov, S. I.; Shabelnyk, T. M.; Shutylieva, O. V.; Pazukha, I. M.; Chornous, A. M.

    2018-03-01

    The paper reports the influence of dysprosium (Dy) interlayer addition on structure, magnetoresistance and magnetic properties of nickel (Ni) thin films. Trilayer film systems Ni/Dy/Ni have been prepared by alternate electron-beam evaporation. It is demonstrated that all as-prepared and annealed Ni thin films have face-centered cubic structure. The composition of the samples after addition of the Dy interlayer corresponds to the combination of face-centered cubic (Ni) and hexagonal close-packed (Dy) structures. The structure of Ni/Dy/Ni film systems changes from amorphous to polycrystalline when Dy interlayer thickness (t Dy) is more than 15 nm. The value of magnetoresistance increases with the adding the Dy interlayer in both longitudinal and transverse geometries, meanwhile the anisotropic character of magnetoresistance field dependences retained. The saturation and reversal magnetizations are reduced with the increasing of the Dy thickness interlayer, while the coercivity takes the minimum value at t Dy = 15 nm. The following increasing of t Dy leads to increasing of coercivity near to three times. This result indicates the influence of the crystal structure on the magnetic properties of Ni thin films at adding Dy interlayer.

  3. Extraction of overlapping radiation-induced magnetoresistance oscillations and bell-shaped giant magnetoresistance in the GaAs/AlGaAs 2DES using a multiconduction model

    Science.gov (United States)

    Samaraweera, R. L.; Liu, H. C.; Wang, Z.; Wegscheider, W.; Mani, R. G.

    2017-06-01

    We present an experimental study aimed at extracting the microwave radiation-induced magnetoresistance oscillations from the bell-shape giant magnetoresistance in high mobility GaAs/AlGaAs devices using a multi-conduction model. The results show that the multi-conduction model describes the observed giant magnetoresistance effect and the model helps to extract radiation-induced magnetoresistance oscillations, over a wider parameter space.

  4. Recent Developments of Magnetoresistive Sensors for Industrial Applications

    Directory of Open Access Journals (Sweden)

    Lisa Jogschies

    2015-11-01

    Full Text Available The research and development in the field of magnetoresistive sensors has played an important role in the last few decades. Here, the authors give an introduction to the fundamentals of the anisotropic magnetoresistive (AMR and the giant magnetoresistive (GMR effect as well as an overview of various types of sensors in industrial applications. In addition, the authors present their recent work in this field, ranging from sensor systems fabricated on traditional substrate materials like silicon (Si, over new fabrication techniques for magnetoresistive sensors on flexible substrates for special applications, e.g., a flexible write head for component integrated data storage, micro-stamping of sensors on arbitrary surfaces or three dimensional sensing under extreme conditions (restricted mounting space in motor air gap, high temperatures during geothermal drilling.

  5. Recent Developments of Magnetoresistive Sensors for Industrial Applications.

    Science.gov (United States)

    Jogschies, Lisa; Klaas, Daniel; Kruppe, Rahel; Rittinger, Johannes; Taptimthong, Piriya; Wienecke, Anja; Rissing, Lutz; Wurz, Marc Christopher

    2015-11-12

    The research and development in the field of magnetoresistive sensors has played an important role in the last few decades. Here, the authors give an introduction to the fundamentals of the anisotropic magnetoresistive (AMR) and the giant magnetoresistive (GMR) effect as well as an overview of various types of sensors in industrial applications. In addition, the authors present their recent work in this field, ranging from sensor systems fabricated on traditional substrate materials like silicon (Si), over new fabrication techniques for magnetoresistive sensors on flexible substrates for special applications, e.g., a flexible write head for component integrated data storage, micro-stamping of sensors on arbitrary surfaces or three dimensional sensing under extreme conditions (restricted mounting space in motor air gap, high temperatures during geothermal drilling).

  6. Effect of quantum tunneling on spin Hall magnetoresistance.

    Science.gov (United States)

    Ok, Seulgi; Chen, Wei; Sigrist, Manfred; Manske, Dirk

    2017-02-22

    We present a formalism that simultaneously incorporates the effect of quantum tunneling and spin diffusion on the spin Hall magnetoresistance observed in normal metal/ferromagnetic insulator bilayers (such as Pt/Y 3 Fe 5 O 12 ) and normal metal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle of magnetization influences the magnetoresistance of the normal metal. In the normal metal side the spin diffusion is known to affect the landscape of the spin accumulation caused by spin Hall effect and subsequently the magnetoresistance, while on the ferromagnet side the quantum tunneling effect is detrimental to the interface spin current which also affects the spin accumulation. The influence of generic material properties such as spin diffusion length, layer thickness, interface coupling, and insulating gap can be quantified in a unified manner, and experiments that reveal the quantum feature of the magnetoresistance are suggested.

  7. Optically Tunable Magnetoresistance Effect: From Mechanism to Novel Device Application.

    Science.gov (United States)

    Liu, Pan; Lin, Xiaoyang; Xu, Yong; Zhang, Boyu; Si, Zhizhong; Cao, Kaihua; Wei, Jiaqi; Zhao, Weisheng

    2017-12-28

    The magnetoresistance effect in sandwiched structure describes the appreciable magnetoresistance effect of a device with a stacking of two ferromagnetic layers separated by a non-magnetic layer (i.e., a sandwiched structure). The development of this effect has led to the revolution of memory applications during the past decades. In this review, we revisited the magnetoresistance effect and the interlayer exchange coupling (IEC) effect in magnetic sandwiched structures with a spacer layer of non-magnetic metal, semiconductor or organic thin film. We then discussed the optical modulation of this effect via different methods. Finally, we discuss various applications of these effects and present a perspective to realize ultralow-power, high-speed data writing and inter-chip connection based on this tunable magnetoresistance effect.

  8. Evaluation of Magnetoresistive RAM for Space Applications

    Science.gov (United States)

    Heidecker, Jason

    2014-01-01

    Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

  9. Linear position sensing using magnetoresistive sensors

    Energy Technology Data Exchange (ETDEWEB)

    Bratland, T.; Wan, H. [Honeywell Inc., Plymouth, MN (United States). Solid State Electronics Center

    2001-07-01

    This paper presents a non-contact, non-wear-out solution for long span absolute linear position sensing. This solution utilizes an array of magnetoresistive (MR) sensors, a magnet and signal conditioning electronics. The sensors are used to determine the position of a magnet that is attached to a moving object. In addition to mechanical benefits, this solution offers a high accuracy, low power solution. In this paper we will discuss the operating principles, system error and applications of this approach. This approach will be beneficial in applications for linear position or displacement, LVDT replacements, proximity detection, valve positioning, shaft travel, automotive steering, brake and throttle position systems. This will be used in industries including automotive, aviation and industrial process control. (orig.)

  10. Magnetoresistance and ion bombardment induced magnetic patterning

    International Nuclear Information System (INIS)

    Hoeink, V.

    2008-01-01

    In this thesis the combination of the magnetic patterning of the unidirectional anisotropy and the tunnel magnetoresistance effect is investigated. In my diploma thesis, it has been shown that it is in principle possible to use the magnetic patterning by ion bombardment to magnetically structure the pinned layer in magnetic tunnel junctions (MTJs) with alumina barrier. Furthermore, it has been shown that the side effects which have been observed after this treatment can be at least reduced by an additional heating step. Starting from this point, the applicability of ion bombardment induced magnetic patterning (IBMP) in general and the combination of IBMP and MTJs in particular is investigated and new applications are developed. (orig.)

  11. Enhanced magnetoresistance in graphene spin valve

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Muhammad Zahir, E-mail: zahir.upc@gmail.com [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Hussain, Ghulam [Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa (Pakistan); Siddique, Salma [Department of Bioscience & Biotechnology, Sejong University, Seoul 143-747 (Korea, Republic of); Iqbal, Muhammad Waqas [Department of Physics, Riphah Institute of Computing and Applied Sciences (RICAS), Riphah International University, Lahore (Pakistan)

    2017-05-01

    Graphene has been explored as a promising candidate for spintronics due to its atomically flat structure and novel properties. Here we fabricate two spin valve junctions, one from directly grown graphene on Ni electrode (DG) and other from transferred graphene (TG). The magnetoresistance (MR) ratio for DG device is found to be higher than TG device i.e. ~0.73% and 0.14%, respectively. Also the spin polarization of Ni electrode is determined to be 6.03% at room temperature in case of DG device, however it reduces to 2.1% for TG device. From this analysis, we infer how environmental exposure of the sample degrades the spin properties of the magnetic junctions. Moreover, the transport measurements reveal linear behavior for current-voltage (I-V) characteristics, indicating ohmic behavior of the junctions. Our findings unveil the efficiency of direct growth of graphene for spin filtering mechanism in spin valve devices.

  12. Giant magnetoresistance An ab-initio description

    CERN Document Server

    Binder, J

    2000-01-01

    A new theoretical concept to study the microscopic origin of Giant Magnetoresistance (GMR) from first principles is presented. The method is based on ab-initio electronic structure calculations within the spin density functional theory using a Screened KORRINGA-KOHNROSTOKER method. Scattering at impurity atoms in the multilayers is described by means of a GREEN's-function method. The scattering potentials are calculated self-consistently. The transport properties are treated quasi-classically solving the BOLTZMANN equation including the electronic structure of the layered system and the anisotropic scattering. The solution of the BOLTZMANN equation is performed iteratively taking into account both scattering out and scattering in terms (vertex corrections). The method is applied to Co/Cu and Fe/Cr multilayers. Trends of scattering cross sections, residual resistivities and GMR ratios are discussed for various transition metal impurities at different positions in the Co/Cu or Fe/Cr multilayers. Furthermore the...

  13. Large, non-saturating magnetoresistance in WTe2.

    Science.gov (United States)

    Ali, Mazhar N; Xiong, Jun; Flynn, Steven; Tao, Jing; Gibson, Quinn D; Schoop, Leslie M; Liang, Tian; Haldolaarachchige, Neel; Hirschberger, Max; Ong, N P; Cava, R J

    2014-10-09

    Magnetoresistance is the change in a material's electrical resistance in response to an applied magnetic field. Materials with large magnetoresistance have found use as magnetic sensors, in magnetic memory, and in hard drives at room temperature, and their rarity has motivated many fundamental studies in materials physics at low temperatures. Here we report the observation of an extremely large positive magnetoresistance at low temperatures in the non-magnetic layered transition-metal dichalcogenide WTe2: 452,700 per cent at 4.5 kelvins in a magnetic field of 14.7 teslas, and 13 million per cent at 0.53 kelvins in a magnetic field of 60 teslas. In contrast with other materials, there is no saturation of the magnetoresistance value even at very high applied fields. Determination of the origin and consequences of this effect, and the fabrication of thin films, nanostructures and devices based on the extremely large positive magnetoresistance of WTe2, will represent a significant new direction in the study of magnetoresistivity.

  14. Large, Tunable Magnetoresistance in Nonmagnetic III-V Nanowires.

    Science.gov (United States)

    Li, Sichao; Luo, Wei; Gu, Jiangjiang; Cheng, Xiang; Ye, Peide D; Wu, Yanqing

    2015-12-09

    Magnetoresistance, the modulation of resistance by magnetic fields, has been adopted and continues to evolve in many device applications including hard-disk, memory, and sensors. Magnetoresistance in nonmagnetic semiconductors has recently raised much attention and shows great potential due to its large magnitude that is comparable or even larger than magnetic materials. However, most of the previous work focus on two terminal devices with large dimensions, typically of micrometer scales, which severely limit their performance potential and more importantly, scalability in commercial applications. Here, we investigate magnetoresistance in the impact ionization region in InGaAs nanowires with 20 nm diameter and 40 nm gate length. The deeply scaled dimensions of these nanowires enable high sensibility with less power consumption. Moreover, in these three terminal devices, the magnitude of magnetoresistance can be tuned by the transverse electric field controlled by gate voltage. Large magnetoresistance between 100% at room temperature and 2000% at 4.3 K can be achieved at 2.5 T. These nanoscale devices with large magnetoresistance offer excellent opportunity for future high-density large-scale magneto-electric devices using top-down fabrication approaches, which are compatible with commercial silicon platform.

  15. Angular integrals in d dimensions

    International Nuclear Information System (INIS)

    Somogyi, Gabor

    2011-01-01

    We discuss the evaluation of certain d dimensional angular integrals which arise in perturbative field theory calculations. We find that the angular integral with n denominators can be computed in terms of a certain special function, the so-called H-function of several variables. We also present several illustrative examples of the general result and briefly consider some applications. (orig.)

  16. Coincident-inclusive electrofission angular correlations

    International Nuclear Information System (INIS)

    Arruda Neto, J.D.T.

    1983-08-01

    A method for the joint analysis of coincident and inclusive electrofission data, in order to minimize effects of the model dependence of data interpretation, is developed. Explicit calculations of the (e,e'f) angular correlations are presented. The potentialities of the method to the study of sub- and near-barrier properties of the fission process, and to the study of the giant resonances fission mode, are discussed. (Author) [pt

  17. Granular giant magnetoresistive materials and their ferromagnetic resonances

    Science.gov (United States)

    Rubinstein, M.; Das, B. N.; Koon, N. C.; Chrisey, D. B.; Horwitz, J.

    1994-11-01

    Ferromagnetic resonance (FMR) can reveal important information on the size and shape of the ferromagnetic particles which are dispersed in granular giant magnetoresistive (GMR) materials. We have investigated the FMR spectra of three different types of granular GMR material, each with different properties: (1) melt-spun ribbons of Fe5Co15Cu80 and Co20Cu80, (2) thin films of Co20Cu80 produced by pulsed laser deposition, and (3) a granular multilayer film of (Cu(50 A)/Fe(10 A)) x 50. We interpret the linewidth of these materials in as simple a manner as possible, as a 'powder pattern' of noninteracting ferromagnetic particles. The linewidth of the melt-spun ribbons is caused by a completely random distribution of crystalline anisotropy axes. The linewidth of these samples is strongly dependent upon the annealing temperature: the linewidth of the as-spun sample is 2.5 kOe (appropriate for single-domain particles) while the linewidth of a melt-spun sample annealed at 900 C for 15 min is 3.8 kOe (appropriate for larger, multidomain particles). The linewidth of the granular multilayer is attributed to a restricted distribution of shape anisotropies, as expected from a discontinuous multilayer, and is only 0.98 kOe with the magnetic field in the plane of the film.

  18. Ferromagnetic-resonance studies of granular giant-magnetoresistive materials

    Science.gov (United States)

    Rubinstein, M.; Das, B. N.; Koon, N. C.; Chrisey, D. B.; Horwitz, J.

    1994-07-01

    Ferromagnetic resonance (FMR) can reveal important information on the size and shape of the ferromagnetic particles which are dispersed in granular giant magnetoresistive (GMR) materials. We have investigated the FMR spectra of three different types of granular GMR material, each with different properties: (1) melt-spun ribbons of Fe5Co15Cu80 and Co20Cu80, (2) thin films of Co20Cu80 produced by pulsed laser deposition, and (3) a granular multilayer film of [Cu(50 Å)/Fe(10 Å)]×50. We interpret the linewidth of these materials in as simple a manner as possible, as a ``powder pattern'' of noninteracting ferromagnetic particles. The linewidth of the melt-spun ribbons is caused by a completely random distribution of crystalline anisotropy axes. The linewidth of these samples is strongly dependent upon the annealing temperature: the linewidth of the as-spun sample is 2.5 kOe (appropriate for single-domain particles) while the linewidth of a melt-spun sample annealed at 900 °C for 15 min is 4.5 kOe (appropriate for larger, multidomain particles). The linewidth of the granular multilayer is attributed to a restricted distribution of shape anisotropies, as expected from a discontinuous multilayer, and is only 0.98 kOe when the applied magnetic field is in the plane of the film.

  19. Magnetoresistance and magnetization anomalies in CeB6

    International Nuclear Information System (INIS)

    Bogach, A.V.; Glushkov, V.V.; Demishev, S.V.; Samarin, N.A.; Paderno, Yu.B.; Dukhnenko, A.V.; Shitsevalova, N.Yu.; Sluchanko, N.E.

    2006-01-01

    High precision magnetoresistance (MR) Δρ/ρ(H,T) and magnetization M(H,T) measurements have been carried out for well known and typical strongly correlated electron system-cerium hexaboride. The detailed measurements have been fulfilled on single crystalline samples of CeB 6 over a wide temperature range T>=1.8K in magnetic fields up to 70kOe. It was shown that the MR anomalies in the magnetic heavy fermion compound under investigation can be consistently interpreted in the frameworks of a simple relation between resistivity and magnetization-Δρ/ρ∼M 2 obtained by Yosida [Phys. Rev. 107(1957)396]. A local magnetic susceptibility χ loc (T,H)=(1/H*(d(Δρ/ρ)/dH)) 1/2 was deduced directly from the MR Δρ(H,T) measurements and compared with the experimental data of magnetization M(H,T). The magnetic susceptibility dependences χ loc (T,H) and χ(T,H) obtained in this study for CeB 6 allow us to analyze the complicated H-T magnetic phase diagram of this so-called dense Kondo-system

  20. Tunnel Magnetoresistance Sensors with Magnetostrictive Electrodes: Strain Sensors.

    Science.gov (United States)

    Tavassolizadeh, Ali; Rott, Karsten; Meier, Tobias; Quandt, Eckhard; Hölscher, Hendrik; Reiss, Günter; Meyners, Dirk

    2016-11-11

    Magnetostrictive tunnel magnetoresistance (TMR) sensors pose a bright perspective in micro- and nano-scale strain sensing technology. The behavior of TMR sensors under mechanical stress as well as their sensitivity to the applied stress depends on the magnetization configuration of magnetic tunnel junctions (MTJ)s with respect to the stress axis. Here, we propose a configuration resulting in an inverse effect on the tunnel resistance by tensile and compressive stresses. Numerical simulations, based on a modified Stoner-Wohlfarth (SW) model, are performed in order to understand the magnetization reversal of the sense layer and to find out the optimum bias magnetic field required for high strain sensitivity. At a bias field of -3.2 kA/m under a 0.2 × 10 - 3 strain, gauge factors of 2294 and -311 are calculated under tensile and compressive stresses, respectively. Modeling results are investigated experimentally on a round junction with a diameter of 30 ± 0.2 μ m using a four-point bending apparatus. The measured field and strain loops exhibit nearly the same trends as the calculated ones. Also, the gauge factors are in the same range. The junction exhibits gauge factors of 2150 ± 30 and -260 for tensile and compressive stresses, respectively, under a -3.2 kA/m bias magnetic field. The agreement of the experimental and modeling results approves the proposed configuration for high sensitivity and ability to detect both tensile and compressive stresses by a single TMR sensor.

  1. Magnetoresistance of rolled-up Fe3Si nanomembranes.

    Science.gov (United States)

    Schumann, J; Lisunov, K G; Escoffier, W; Raquet, B; Broto, J M; Arushanov, E; Mönch, I; Makarov, D; Deneke, C; Schmidt, O G

    2012-06-29

    Magnetotransport of individual rolled-up Fe(3)Si nanomembranes is investigated in a broad temperature range from 4.2 K up to 300 K in pulsed magnetic fields up to 55 T. The observed magnetoresistance (MR) has the following pronounced features: (i) MR is negative in the investigated intervals of temperature and magnetic field; (ii) its magnitude increases linearly with the magnetic field in a low-field region and reveals a gradual trend to saturation when the magnetic field increases; (iii) the MR effect becomes more pronounced with increasing temperature. These dependences of MR on the magnetic field and temperature are in line with predictions of the spin-disorder model of the spin-flip s-d interaction assisted with creation or annihilation of magnons, which is expected above a certain critical temperature. Comparison of the MR features in rolled-up and planar samples reveals a substantial increase of the critical temperature in the rolled-up tube, which is attributed to a new geometry and internal strain arising in the rolled-up nanomembranes, influencing the electronic and magnetic properties of the material.

  2. Energy scales and magnetoresistance at a quantum critical point

    Energy Technology Data Exchange (ETDEWEB)

    Shaginyan, V.R. [Petersburg Nuclear Physics Institute, RAS, Gatchina, 188300 (Russian Federation); Racah Institute of Physics, Hebrew University, Jerusalem 91904 (Israel); CTSPS, Clark Atlanta University, Atlanta, GA 30314 (United States)], E-mail: vrshag@thd.pnpi.spb.ru; Amusia, M.Ya. [Racah Institute of Physics, Hebrew University, Jerusalem 91904 (Israel); Msezane, A.Z. [CTSPS, Clark Atlanta University, Atlanta, GA 30314 (United States); Popov, K.G. [Komi Science Center, Ural Division, RAS, 3a Chernova street, Syktyvkar, 167982 (Russian Federation); Stephanovich, V.A. [Opole University, Institute of Mathematics and Informatics, Opole, 45-052 (Poland)

    2009-03-02

    The magnetoresistance (MR) of CeCoIn{sub 5} is notably different from that in many conventional metals. We show that a pronounced crossover from negative to positive MR at elevated temperatures and fixed magnetic fields is determined by the scaling behavior of quasiparticle effective mass. At a quantum critical point (QCP) this dependence generates kinks (crossover points from fast to slow growth) in thermodynamic characteristics (like specific heat, magnetization, etc.) at some temperatures when a strongly correlated electron system transits from the magnetic field induced Landau-Fermi liquid (LFL) regime to the non-Fermi liquid (NFL) one taking place at rising temperatures. We show that the above kink-like peculiarity separates two distinct energy scales in QCP vicinity - low temperature LFL scale and high temperature one related to NFL regime. Our comprehensive theoretical analysis of experimental data permits to reveal for the first time new MR and kinks scaling behavior as well as to identify the physical reasons for above energy scales.

  3. Extremely large magnetoresistance and Kohler's rule in PdSn4: A complete study of thermodynamic, transport, and band-structure properties

    Science.gov (United States)

    Jo, Na Hyun; Wu, Yun; Wang, Lin-Lin; Orth, Peter P.; Downing, Savannah S.; Manni, Soham; Mou, Dixiang; Johnson, Duane D.; Kaminski, Adam; Bud'ko, Sergey L.; Canfield, Paul C.

    2017-10-01

    The recently discovered material PtSn4 is known to exhibit extremely large magnetoresistance (XMR) that also manifests Dirac arc nodes on the surface. PdSn4 is isostructural to PtSn4 with the same electron count. We report on the physical properties of high-quality single crystals of PdSn4 including specific heat, temperature- and magnetic-field-dependent resistivity and magnetization, and electronic band-structure properties obtained from angle-resolved photoemission spectroscopy (ARPES). We observe that PdSn4 has physical properties that are qualitatively similar to those of PtSn4, but find also pronounced differences. Importantly, the Dirac arc node surface state of PtSn4 is gapped out for PdSn4. By comparing these similar compounds, we address the origin of the extremely large magnetoresistance in PdSn4 and PtSn4; based on detailed analysis of the magnetoresistivity ρ (H ,T ) , we conclude that neither the carrier compensation nor the Dirac arc node surface state are the primary reason for the extremely large magnetoresistance. On the other hand, we find that, surprisingly, Kohler's rule scaling of the magnetoresistance, which describes a self-similarity of the field-induced orbital electronic motion across different length scales and is derived for a simple electronic response of metals to an applied magnetic field is obeyed over the full range of temperatures and field strengths that we explore.

  4. Extremely large magnetoresistance and Kohler's rule in PdSn4 : A complete study of thermodynamic, transport, and band-structure properties

    International Nuclear Information System (INIS)

    Jo, Na Hyun; Wu, Yun; Wang, Lin-Lin; Orth, Peter P.; Downing, Savannah S.

    2017-01-01

    The recently discovered material PtSn 4 is known to exhibit extremely large magnetoresistance (XMR) that also manifests Dirac arc nodes on the surface. PdSn 4 is isostructural to PtSn 4 with the same electron count. Here, we report on the physical properties of high-quality single crystals of PdSn 4 including specific heat, temperature- and magnetic-field-dependent resistivity and magnetization, and electronic band-structure properties obtained from angle-resolved photoemission spectroscopy (ARPES). We observe that PdSn 4 has physical properties that are qualitatively similar to those of PtSn 4 , but find also pronounced differences. Importantly, the Dirac arc node surface state of PtSn 4 is gapped out for PdSn 4 . By comparing these similar compounds, we address the origin of the extremely large magnetoresistance in PdSn 4 and PtSn 4 ; based on detailed analysis of the magnetoresistivity ρ (H , T) , we conclude that neither the carrier compensation nor the Dirac arc node surface state are the primary reason for the extremely large magnetoresistance. On the other hand, we also find that, surprisingly, Kohler's rule scaling of the magnetoresistance, which describes a self-similarity of the field-induced orbital electronic motion across different length scales and is derived for a simple electronic response of metals to an applied magnetic field is obeyed over the full range of temperatures and field strengths that we explore.

  5. Low temperature magnetoresistance in La1.32Sr1.68Mn2O7 layered manganite under hydrostatic pressure

    International Nuclear Information System (INIS)

    Kumaresavanji, M.; Fontes, M.B.

    2010-01-01

    The La 1.32 Sr 1.68 Mn 2 O 7 layered manganite system has been studied by the low temperature electrical resistance and magnetoresistance under hydrostatic pressure up to 25 kbar. We have observe both, a Curie temperature (T C ) and a metal-insulator transition (T MI ) at 118 K in the ambient pressure. The applied pressure shifts the T MI to higher temperature values and induces a second metal-insulator transition (T 2 MI ) at 90 K, in the temperature dependence of resistivity measurements. Also, the pressure suppresses the peak resistance abruptly at T C . When an external field of 5 T is applied, we have observed a large negative magnetoresistance of 300% at the transition temperature and a 128% at 4.5 K. However, the increased pressure decreases the magnetoresistance ratio gradually. When the pressure reaches its maximum available value of 25 kbar, the magnetoresistance ratio decreases at a rate of 1.3%/kbar. From our experimental results, the decrease of magnetoresistance ratio with pressure is explained by the pressure induced canted spin state which is not favor for the spin polarized intergrain tunneling in layered manganites.

  6. Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

    DEFF Research Database (Denmark)

    Bolotin, Kirill; Kuemmeth, Ferdinand; Ralph, D

    2006-01-01

    We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance w...... with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference....

  7. Magnetoresistance based determination of basic parameters of minority charge carriers in solid matter

    Directory of Open Access Journals (Sweden)

    Y.O. Uhryn

    2017-12-01

    Full Text Available Magnetoresistance as a tool of basic parameters determination of minority charge carriers and the ratio of minority charge carriers conductivity to majority ones in solid matter has been considered within the framework of the phenomenological two-band model. The criterion of the application of this model has been found. As examples of these equations usage the conductor, semiconductor and superconductor have been introduced. From the obtained temperature dependences of the aforementioned values in superconductor, a supposition of a deciding role of minority charge carriers in the emergence of superconductivity state has been made.

  8. Structural and magnetoresistance study of LaxMnyO3±z

    International Nuclear Information System (INIS)

    Jimenez, M.; Martinez, J.L.; Prieto, C.; de Andres, A.; Alonso, J.; Gonzalez-Calbet, J.; Fernandez-Diaz, M.T.

    1997-01-01

    We study the system La x MnO 3±z in order to produce proper self-doping (Mn 3+ /Mn 4+ ratio) by La vacancies only, in place of divalent substitution. The system is stable in the range 0.8 C spanning from 200 to 300 K depending on the doping level, with a saturation value ∼2.7μ B /Mn atom. La x MnO 3±z present a metallic-insulator transition, and a magneto-resistance effect close to 75% at 200 K under an applied magnetic field of 9 T, with RT (300 K) value close to 50%. (orig.)

  9. AngularJS testing cookbook

    CERN Document Server

    Bailey, Simon

    2015-01-01

    This book is intended for developers who have an understanding of the basic principles behind both AngularJS and test-driven development. You, as a developer, are interested in eliminating the fear related to either introducing tests to an existing codebase or starting out testing on a fresh AngularJS application. If you're a team leader or part of a QA team with the responsibility of ensuring full test coverage of an application, then this book is ideal for you to comprehend the full testing scope required by your developers. Whether you're new to or are well versed with AngularJS, this book

  10. The influence of interlayer exchange coupling in giant-magnetoresistive devices on spin diode effect in wide frequency range

    Energy Technology Data Exchange (ETDEWEB)

    Ziętek, Sławomir, E-mail: zietek@agh.edu.pl; Skowroński, Witold; Wiśniowski, Piotr; Czapkiewicz, Maciej; Stobiecki, Tomasz [Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków (Poland); Ogrodnik, Piotr [Department of Electronics, AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Kraków (Poland); Faculty of Physics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warszawa (Poland); Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland); Barnaś, Józef [Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań (Poland); Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań (Poland)

    2015-09-21

    Spin diode effect in a giant magnetoresistive strip is measured in a broad frequency range, including resonance and off-resonance frequencies. The off-resonance dc signal is relatively strong and also significantly dependent on the exchange coupling between magnetic films through the spacer layer. The measured dc signal is described theoretically by taking into account magnetic dynamics induced by Oersted field created by an ac current flowing through the system.

  11. Control of Angular Intervals for Angle-Multiplexed Holographic Memory

    Science.gov (United States)

    Kinoshita, Nobuhiro; Muroi, Tetsuhiko; Ishii, Norihiko; Kamijo, Koji; Shimidzu, Naoki

    2009-03-01

    In angle-multiplexed holographic memory, the full width at half maximum of the Bragg selectivity curves is dependent on the angle formed between the medium and incident laser beams. This indicates the possibility of high density and high multiplexing number by varying the angular intervals between adjacent holograms. We propose an angular interval scheduling for closely stacking holograms into medium even when the angle range is limited. We obtained bit error rates of the order of 10-4 under the following conditions: medium thickness of 1 mm, laser beam wavelength of 532 nm, and angular multiplexing number of 300.

  12. Linear unsaturating magnetoresistance in disordered systems

    Science.gov (United States)

    Lai, Ying Tong; Lara, Silvia; Love, Cameron; Ramakrishnan, Navneeth; Adam, Shaffique

    Theoretical works have shown that disordered systems exhibit classical magnetoresistance (MR). In this talk, we examine a variety of experimental systems that observe linear MR at high magnetic fields, including silver chalcogenides, graphene, graphite and Weyl semimetals. We show that a careful analysis of the magnitude of the MR, as well as the field strength at which the MR changes from quadratic to linear, reveal important properties of the system, such as the ratio of the root-mean-square fluctuations in the carrier density and the average carrier density. By looking at other properties such as the zero-field mobility, we show that this carrier density inhomogeneity is consistent with what is known about the microscopic impurities in these experiments. The application of this disorder-induced MR to a variety of different experimental scenarios underline the universality of these theoretical models. This work is supported by the Singapore National Research Foundation (NRF-NRFF2012-01) and the Singapore Ministry of Education and Yale-NUS College through Grant Number R-607-265-01312.

  13. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    Energy Technology Data Exchange (ETDEWEB)

    Hashimoto, T.; Kamikawa, S.; Haruyama, J., E-mail: J-haru@ee.aoyama.ac.jp [Faculty of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 252-5258 (Japan); Soriano, D. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Pedersen, J. G. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); Department of Micro-and Nanotechnology, DTU Nanotech, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Roche, S. [Institut Català de Nanociència i Nanotecnologia (ICN2), Campus de la UAB, Edifici ICN2, 08193 Bellaterra, Barcelona (Spain); ICREA - Institucio Catalana de Recerca i Estudis Avancats, 08010 Barcelona (Spain)

    2014-11-03

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO{sub 2}/FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO{sub 2}/FGNPA junction also drastically enhances TMR ratios up to ∼100%.

  14. Tunneling magnetoresistance phenomenon utilizing graphene magnet electrode

    International Nuclear Information System (INIS)

    Hashimoto, T.; Kamikawa, S.; Haruyama, J.; Soriano, D.; Pedersen, J. G.; Roche, S.

    2014-01-01

    Using magnetic rare-metals for spintronic devices is facing serious problems for the environmental contamination and the limited material-resource. In contrast, by fabricating ferromagnetic graphene nanopore arrays (FGNPAs) consisting of honeycomb-like array of hexagonal nanopores with hydrogen-terminated zigzag-type atomic structure edges, we reported observation of polarized electron spins spontaneously driven from the pore edge states, resulting in rare-metal-free flat-energy-band ferromagnetism. Here, we demonstrate observation of tunneling magnetoresistance (TMR) behaviors on the junction of cobalt/SiO 2 /FGNPA electrode, serving as a prototype structure for future rare-metal free TMR devices using magnetic graphene electrodes. Gradual change in TMR ratios is observed across zero-magnetic field, arising from specified alignment between pore-edge- and cobalt-spins. The TMR ratios can be controlled by applying back-gate voltage and by modulating interpore distance. Annealing the SiO 2 /FGNPA junction also drastically enhances TMR ratios up to ∼100%

  15. Noncontact vibration measurements using magnetoresistive sensing elements

    Science.gov (United States)

    Tomassini, R.; Rossi, G.

    2016-06-01

    Contactless instrumentations is more and more used in turbomachinery testing thanks to the non-intrusive character and the possibility to monitor all the components of the machine at the same time. Performances of blade tip timing (BTT) measurement systems, used for noncontact turbine blade vibration measurements, in terms of uncertainty and resolution are strongly affected by sensor characteristics and processing methods. The sensors used for BTT generate pulses, used for precise measurements of turbine blades time of arrival. Nowadays proximity sensors used in this application are based on optical, capacitive, eddy current and microwave measuring principle. Pressure sensors has been also tried. This paper summarizes the results achieved using a novel instrumentation based on the magnetoresistive sensing elements. The characterization of the novel probe has been already published. The measurement system was validated in test benches and in a real jet-engine comparing different sensor technologies. The whole instrumentation was improved. The work presented in this paper focuses on the current developments. In particular, attention is given to the data processing software and new sensor configurations.

  16. Magnetoresistive magnetometer for space science applications

    International Nuclear Information System (INIS)

    Brown, P; Beek, T; Carr, C; O’Brien, H; Cupido, E; Oddy, T; Horbury, T S

    2012-01-01

    Measurement of the in situ dc magnetic field on space science missions is most commonly achieved using instruments based on fluxgate sensors. Fluxgates are robust, reliable and have considerable space heritage; however, their mass and volume are not optimized for deployment on nano or picosats. We describe a new magnetometer design demonstrating science measurement capability featuring significantly lower mass, volume and to a lesser extent power than a typical fluxgate. The instrument employs a sensor based on anisotropic magnetoresistance (AMR) achieving a noise floor of less than 50 pT Hz −1/2 above 1 Hz on a 5 V bridge bias. The instrument range is scalable up to ±50 000 nT and the three-axis sensor mass and volume are less than 10 g and 10 cm 3 , respectively. The ability to switch the polarization of the sensor's easy axis and apply magnetic feedback is used to build a driven first harmonic closed loop system featuring improved linearity, gain stability and compensation of the sensor offset. A number of potential geospace applications based on the initial instrument results are discussed including attitude control systems and scientific measurement of waves and structures in the terrestrial magnetosphere. A flight version of the AMR magnetometer will fly on the TRIO-CINEMA mission due to be launched in 2012. (paper)

  17. Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers.

    Science.gov (United States)

    Stamopoulos, D; Aristomenopoulou, E

    2015-08-26

    Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent 'on' and 'off', thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis.

  18. Fusion neutron effects on magnetoresistivity of copper stabilizer materials

    International Nuclear Information System (INIS)

    Guinan, M.W.; Van Konynenburg, R.A.

    1983-01-01

    Eight copper wires were repeatedly irradiated at 4.2 to 4.4 K with 14.8 MV neutrons and isochronally annealed at temperatures up to 34 0 C for a total of five cycles. Their electrical resistances were monitored during irradiation under zero applied magnetic field. After each irradiation the magnetoresistances were measured in applied transverse magnetic fields of up to 12 T. Then the samples were isochronally annealed to observe the recovery of the resistivity and magnetoresistivity. After each anneal at the highest temperature (34 0 C), some of the damage remained and contributed to the damage state observed following the subsequent irradiation. In this way, we were able to observe how the changes in magnetoresistance would accumulate during the repeated irradiations and anneals expected to be characteristic of fusion reactor magnets. For each succeeding irradiation the fluence was chosen to produce approximately the same final magnetoresistance at 12 T, taking account of the accumulating residual radiation damage. The increment of magnetoresistivity added by the irradiation varied from 35 to 65% at 12 T and from 50 to 90% at 8 T for the various samples

  19. Lidar Orbital Angular Momentum Sensor

    Data.gov (United States)

    National Aeronautics and Space Administration — The recognition in recent decades that electromagnetic fields have angular momentum (AM) in the form of not only polarization (or spin AM) but also orbital (OAM) has...

  20. Angular momentum from tidal torques

    International Nuclear Information System (INIS)

    Barnes, J.; Efstathiou, G.; Cambridge Univ., England)

    1987-01-01

    The origin of the angular momentum of bound objects in large N-body simulations is studied using three sets of models. One model with white-noise initial conditions is analyzed as well as two in which the initial conditions have more power on large scales, as predicted in models with cold dark matter. The growth and distribution of angular momentum in individual objects is studied and it is found that the specific angular momentum distribution of bound clumps increases in a near linear fashion with radius while the orientation of the angular momentum in the inner high-density regions is often poorly correlated with that of the outer parts. It is also found that the dimensionless spin parameter is insensitive to the initial perturbation spectrum and has a median value of about 0.05. 61 references

  1. Plasmons with orbital angular momentum

    International Nuclear Information System (INIS)

    Mendonca, J. T.; Ali, S.; Thide, B.

    2009-01-01

    Electron plasma waves carrying orbital angular momentum are investigated in an unmagnetized collisionless plasma composed of inertial electrons and static ions. For this purpose, the usual plasmon dispersion relation is employed to derive an approximate paraxial equation. The latter is analyzed with a Gaussian beam solution. For a finite angular momentum associated with the plasmon, Laguerre-Gaussian (LG) solutions are employed for solving the electrostatic potential problem which gives approximate solution and is valid for plasmon beams in the paraxial approximation. The LG potential determines the electric field components and energy flux of plasmons with finite angular momentum. Numerical illustrations show that the radial and angular mode numbers strongly modify the profiles of the LG potential.

  2. Correction of the angular dependence of MatriXX Evolution detectors and its impact in the IMRT and VMAT treatment validation; Correccion de la dependencia angular de los detectores del MatriXX Evolution y su impacto en la validacion de tratamientos de IMRT y VMAT

    Energy Technology Data Exchange (ETDEWEB)

    Casares Magaz, O.; Seongheon, K.; Hernandez Armas, J.; Papanikolaou, N.

    2014-07-01

    The purpose of the study was to create detector element-specific angular correction factors for each detector of the MatriXX planar ion chamber array and compare them to vendor-default angular correction factors. Additionally, the impact of both factors on gamma index was quantified using two corrections. The correction factor of each element is determined irradiating the detector at different incidences by the ratio of the calculated expected dose to the MatriXX measured dose as a gantry angle function. To evaluate its impact, sixty-five pre-irradiated patient-specific dose validations were re-analyzed using the gamma index with: 3%/3 mm, 2%/2 mm, 1%/1 mm criteria. The factors for 6 MV were found to differ (7%) from the default ones for specific angles particularly for 85 degree centigrade to 95 degree centigrade. For 10 MV, differences (1.0%) existed when correction factors were created using various ROI's. Two corrections were proposed, absolute differences for 3%/3 mm, 2%/2 mm, and 1%/1 mm were up to 1.5%, 4.2% and 4.1% ( p < 0.01), respectively. Large differences in the default and specific factors were noted for 6 MV and lead to improvement of the absolute gamma index value of up to 4.2%. In general, gamma index value increases for patient specific dose validations when using device specific factors. (Author)

  3. Rectilinear Graphs and Angular Resolution

    NARCIS (Netherlands)

    Bodlaender, H.L.; Tel, G.

    2003-01-01

    In this note we show that a planar graph with angular resolution at least π/2 can be drawn with all angles an integer multiple of π/2, that is, in a rectilinear manner. Moreover, we show that for d ≠ 4, d › 2, having an angular resolution of 2π/d does not imply that the graph can be drawn with all

  4. Studies of colossal magnetoresistive oxides with radioactive isotopes

    CERN Document Server

    CERN. Geneva. ISOLDE and Neutron Time-of-Flight Experiments Committee; Amaral, V S; Araújo, J P; Butz, T; Correia, J G; Dubourdieu, C; Habermeier, H U; Lourenço, A A; Marques, J G; Da Silva, M F A; Senateur, J P; Soares, J C; Sousa, J B; Suryan, R; Tokura, Y; Tavares, P B; Tomioka, Y; Tröger, W; Vantomme, A; Vieira, J M; Wahl, U; Weiss, F P; INTC

    2000-01-01

    We propose to study Colossal Magnetoresistive (CMR) oxides with several nuclear techniques, which use radioactive elements at ISOLDE. Our aim is to provide local and element selective information on some of the doping mechanisms that rule electronic interactions and magnetoresistance, in a complementary way to the use of conventional characterisation techniques. Three main topics are proposed: \\\\ \\\\ a) Studies of local [charge and] structural modifications in antiferromagnetic LaMnO$_{3+ \\delta}$ and La$_{1-x}$R$_{x}$MnO$_{3}$ with R=Ca and Cd, doped ferromagnetic systems with competing interactions: - research on the lattice site and electronic characterisation of the doping element. \\\\ \\\\ b) Studies of self doped La$_{x}$R$_{1-x}$MnO$_{3+\\delta}$ systems, with oxygen and cation non-stoichiometry: -learning the role of defects in the optimisation of magnetoresistive properties. \\\\ \\\\ c) Probing the disorder and quenched random field effects in the vicinity of the charge or orbital Ordered/Ferromagnetic phase...

  5. Quantum conductance in electrodeposited nanocontacts and magnetoresistance measurements

    DEFF Research Database (Denmark)

    Elhoussine, F.; Encinas, A.; Mátéfi-Tempfli, Stefan

    2003-01-01

    The conductance and magnetoresistance measurements in magnetic Ni-Ni and Co-Ni nanocontacts prepared by electrodeposition within the pores of a track of track-etched polymer membrane were discussed. At room temperature, Ni-Ni constrictions were found to show broad quantization plateaus of conduct......The conductance and magnetoresistance measurements in magnetic Ni-Ni and Co-Ni nanocontacts prepared by electrodeposition within the pores of a track of track-etched polymer membrane were discussed. At room temperature, Ni-Ni constrictions were found to show broad quantization plateaus...... of conductance during their dissolution in units of e/h, as expected for ferromagnetic ballistic nanocontacts. The measurement of the positive and negative magnetoresistance in Co-Ni nanocontacts was also elaborated....

  6. Anomalous electronic structure and magnetoresistance in TaAs2.

    Science.gov (United States)

    Luo, Yongkang; McDonald, R D; Rosa, P F S; Scott, B; Wakeham, N; Ghimire, N J; Bauer, E D; Thompson, J D; Ronning, F

    2016-06-07

    The change in resistance of a material in a magnetic field reflects its electronic state. In metals with weakly- or non-interacting electrons, the resistance typically increases upon the application of a magnetic field. In contrast, negative magnetoresistance may appear under some circumstances, e.g., in metals with anisotropic Fermi surfaces or with spin-disorder scattering and semimetals with Dirac or Weyl electronic structures. Here we show that the non-magnetic semimetal TaAs2 possesses a very large negative magnetoresistance, with an unknown scattering mechanism. Density functional calculations find that TaAs2 is a new topological semimetal [ℤ2 invariant (0;111)] without Dirac dispersion, demonstrating that a negative magnetoresistance in non-magnetic semimetals cannot be attributed uniquely to the Adler-Bell-Jackiw chiral anomaly of bulk Dirac/Weyl fermions.

  7. Ballistic Anisotropic Magnetoresistance of Single-Atom Contacts.

    Science.gov (United States)

    Schöneberg, J; Otte, F; Néel, N; Weismann, A; Mokrousov, Y; Kröger, J; Berndt, R; Heinze, S

    2016-02-10

    Anisotropic magnetoresistance, that is, the sensitivity of the electrical resistance of magnetic materials on the magnetization direction, is expected to be strongly enhanced in ballistic transport through nanoscale junctions. However, unambiguous experimental evidence of this effect is difficult to achieve. We utilize single-atom junctions to measure this ballistic anisotropic magnetoresistance (AMR). Single Co and Ir atoms are deposited on domains and domain walls of ferromagnetic Fe layers on W(110) to control their magnetization directions. They are contacted with nonmagnetic tips in a low-temperature scanning tunneling microscope to measure the junction conductances. Large changes of the magnetoresistance occur from the tunneling to the ballistic regime due to the competition of localized and delocalized d-orbitals, which are differently affected by spin-orbit coupling. This work shows that engineering the AMR at the single atom level is feasible.

  8. Uncertainty principle for angular position and angular momentum

    International Nuclear Information System (INIS)

    Franke-Arnold, Sonja; Barnett, Stephen M; Yao, Eric; Leach, Jonathan; Courtial, Johannes; Padgett, Miles

    2004-01-01

    The uncertainty principle places fundamental limits on the accuracy with which we are able to measure the values of different physical quantities (Heisenberg 1949 The Physical Principles of the Quantum Theory (New York: Dover); Robertson 1929 Phys. Rev. 34 127). This has profound effects not only on the microscopic but also on the macroscopic level of physical systems. The most familiar form of the uncertainty principle relates the uncertainties in position and linear momentum. Other manifestations include those relating uncertainty in energy to uncertainty in time duration, phase of an electromagnetic field to photon number and angular position to angular momentum (Vaccaro and Pegg 1990 J. Mod. Opt. 37 17; Barnett and Pegg 1990 Phys. Rev. A 41 3427). In this paper, we report the first observation of the last of these uncertainty relations and derive the associated states that satisfy the equality in the uncertainty relation. We confirm the form of these states by detailed measurement of the angular momentum of a light beam after passage through an appropriate angular aperture. The angular uncertainty principle applies to all physical systems and is particularly important for systems with cylindrical symmetry

  9. Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells

    Science.gov (United States)

    Melnikov, M. Yu.; Dolgopolov, V. T.; Shashkin, A. A.; Huang, S.-H.; Liu, C. W.; Kravchenko, S. V.

    2017-12-01

    We find an unusual anisotropy of the inplane field magnetoresistance with higher resistance in the parallel orientation of the field, B∥ , and current, I, in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field and the current relative to the crystallographic axes of the sample, and is a consequence of the ridges on the quantum well surface. For the parallel or perpendicular orientations between current and ridges, a method of converting the magnetoresistance measured at I ⊥B∥ into the one measured at I ∥B∥ is suggested and is shown to yield results that agree with the experiment.

  10. High Magnetic Field Study on Giant Negative Magnetoresistance in the Molecular Conductor TPP[Cr(Pc)(CN)2]2

    Science.gov (United States)

    Ikeda, Mitsuo; Kida, Takanori; Tahara, Time; Murakawa, Hiroshi; Nishi, Miki; Matsuda, Masaki; Hagiwara, Masayuki; Inabe, Tamotsu; Hanasaki, Noriaki

    2016-06-01

    We investigated the magnetic and transport properties of the phthalocyanine molecular conductor TPP[Cr(Pc)(CN)2]2 in magnetic fields of up to 54 T. We observed giant negative magnetoresistance which hardly depends on the magnetic field direction owing to the isotropic nature confirmed by electron spin resonance measurements. The magnitude of magnetoresistance [|ρ(μ0H)/ρ(0 T) - 1|] is proportional to the square of magnetization as observed in the case of the spin scattering process, while the proportionality coefficient increases with decreasing the temperature. The magnetization does not saturate even at 53 T, indicating the existence of the large antiferromagnetic exchange interactions between the localized spins. In spite of this antiferromagnetic exchange interaction and low dimensionality, a convex magnetization curve was observed in the low temperature and high magnetic field range. To reproduce this magnetization curve, we proposed a model taking into account the antiferromagnetic exchange interaction between the neighboring π-electron spins.

  11. Magnetoresistance and magnetostriction of Ni81Fe19 and Co90Fe10 mono- and bilayer films

    International Nuclear Information System (INIS)

    Sahingoz, R.; Hollingworth, M.P.; Gibbs, M.R.J.; Murdoch, S.J.

    2005-01-01

    Monolayer and bilayer films of Ni 81 Fe 19 , Co 90 Fe 10 , Co 90 Fe 10 /Ni 81 Fe 19 , and Ni 81 Fe 19 /Co 90 Fe 10 have been grown on thermally oxidized Si. The magnetoresistance (MR) of the samples was measured as a function of applied DC magnetic field, using a four-point probe method. The magnetostriction constant, λ s , was derived from the change of anisotropy field as a function of strain. The dependence of the MR on different combinations of film layers was investigated. The magnetoresistance of the bilayers changed dramatically upon reversal of the layer order. The mono- and bilayer samples with the same material on top of the substrate showed similar MR loop shapes. However, the saturation fields of the bilayers were larger than those for the monolayers. The magnetostriction of all samples was negative. We discuss the consequences for the study and optimization of spin-valve devices

  12. Detection of magnetic resonance signals using a magnetoresistive sensor

    Science.gov (United States)

    Budker, Dmitry; Pines, Alexander; Xu, Shoujun; Hilty, Christian; Ledbetter, Micah P; Bouchard, Louis S

    2013-10-01

    A method and apparatus are described wherein a micro sample of a fluidic material may be assayed without sample contamination using NMR techniques, in combination with magnetoresistive sensors. The fluidic material to be assayed is first subject to pre-polarization, in one embodiment, by passage through a magnetic field. The magnetization of the fluidic material is then subject to an encoding process, in one embodiment an rf-induced inversion by passage through an adiabatic fast-passage module. Thereafter, the changes in magnetization are detected by a pair of solid-state magnetoresistive sensors arranged in gradiometer mode. Miniaturization is afforded by the close spacing of the various modules.

  13. Magnetoresistance of Mn-decorated topological line defects in graphene

    KAUST Repository

    Obodo, Tobechukwu Joshua

    2015-01-13

    We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green\\'s function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.

  14. Strain effects on anisotropic magnetoresistance in a nanowire spin valve

    Science.gov (United States)

    Hossain, Md I.; Maksud, M.; Subramanian, A.; Atulasimha, J.; Bandyopadhyay, S.

    2016-11-01

    The longitudinal magnetoresistance of a copper nanowire contacted by two cobalt contacts shows broad spin-valve peaks at room temperature. However, when the contacts are slightly heated, the peaks change into troughs which are signature of anisotropic magnetoresistance (AMR). Under heating, the differential thermal expansion of the contacts and the substrate generates a small strain in the cobalt contacts which enhances the AMR effect sufficiently to change the peak into a trough. This shows the extreme sensitivity of AMR to strain. The change in the AMR resistivity coefficient due to strain is estimated to be a few m Ω -m/microstrain.

  15. Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.

    Science.gov (United States)

    Huang, Qi-Kun; Yan, Yi; Zhang, Kun; Li, Huan-Huan; Kang, Shishou; Tian, Yu-Feng

    2016-11-23

    Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

  16. Mutual influence between current-induced giant magnetoresistance and radiation-induced magnetoresistance oscillations in the GaAs/AlGaAs 2DES

    OpenAIRE

    Samaraweera, R. L.; Liu, H.-C.; Wang, Z.; Reichl, C.; Wegscheider, W.; Mani, R. G.

    2017-01-01

    Radiation-induced magnetoresistance oscillations are examined in the GaAs/AlGaAs 2D system in the regime where an observed concurrent giant magnetoresistance is systematically varied with a supplementary dc-current, I dc . The I dc tuned giant magnetoresistance is subsequently separated from the photo-excited oscillatory resistance using a multi-conduction model in order to examine the interplay between the two effects. The results show that the invoked multiconduction model describes the obs...

  17. Tunnel Magnetoresistance Sensors with Magnetostrictive Electrodes: Strain Sensors

    Directory of Open Access Journals (Sweden)

    Ali Tavassolizadeh

    2016-11-01

    Full Text Available Magnetostrictive tunnel magnetoresistance (TMR sensors pose a bright perspective in micro- and nano-scale strain sensing technology. The behavior of TMR sensors under mechanical stress as well as their sensitivity to the applied stress depends on the magnetization configuration of magnetic tunnel junctions (MTJs with respect to the stress axis. Here, we propose a configuration resulting in an inverse effect on the tunnel resistance by tensile and compressive stresses. Numerical simulations, based on a modified Stoner–Wohlfarth (SW model, are performed in order to understand the magnetization reversal of the sense layer and to find out the optimum bias magnetic field required for high strain sensitivity. At a bias field of −3.2 kA/m under a 0.2 × 10 - 3 strain, gauge factors of 2294 and −311 are calculated under tensile and compressive stresses, respectively. Modeling results are investigated experimentally on a round junction with a diameter of 30 ± 0.2 μ m using a four-point bending apparatus. The measured field and strain loops exhibit nearly the same trends as the calculated ones. Also, the gauge factors are in the same range. The junction exhibits gauge factors of 2150 ± 30 and −260 for tensile and compressive stresses, respectively, under a −3.2 kA/m bias magnetic field. The agreement of the experimental and modeling results approves the proposed configuration for high sensitivity and ability to detect both tensile and compressive stresses by a single TMR sensor.

  18. Large-uncertainty intelligent states for angular momentum and angle

    International Nuclear Information System (INIS)

    Goette, Joerg B; Zambrini, Roberta; Franke-Arnold, Sonja; Barnett, Stephen M

    2005-01-01

    The equality in the uncertainty principle for linear momentum and position is obtained for states which also minimize the uncertainty product. However, in the uncertainty relation for angular momentum and angular position both sides of the inequality are state dependent and therefore the intelligent states, which satisfy the equality, do not necessarily give a minimum for the uncertainty product. In this paper, we highlight the difference between intelligent states and minimum uncertainty states by investigating a class of intelligent states which obey the equality in the angular uncertainty relation while having an arbitrarily large uncertainty product. To develop an understanding for the uncertainties of angle and angular momentum for the large-uncertainty intelligent states we compare exact solutions with analytical approximations in two limiting cases

  19. Resonant tunnel magnetoresistance in double-barrier planar magnetic tunnel junctions

    KAUST Repository

    Useinov, A. N.

    2011-08-24

    We present a theoretical approach to calculate the spin-dependent current and tunnel magnetoresistance (TMR) in a double-barrier magnetic tunnel junction (DMTJ), in which the magnetization of the middle ferromagnetic metal layer can be aligned parallel or antiparallel in relation to the fixed magnetizations of the left and right ferromagnetic electrodes. The electron transport through the DMTJ is considered as a three-dimensional problem, taking into account all transmitting electron trajectories as well as the spin-dependent momentum conservation law. The dependence of the transmission coefficient and spin-polarized currents on the applied voltage is derived as an exact solution to the quantum-mechanical problem for the spin-polarized transport. In the range of the developed physical model, the resonant tunneling, nonresonant tunneling, and enhanced spin filtering can be explained; the simulation results are in good agreement with experimental data.

  20. Instant AngularJS starter

    CERN Document Server

    Menard, Dan

    2013-01-01

    Get to grips with a new technology, understand what it is and what it can do for you, and then get to work with the most important features and tasks. This book is written in an easytoread style, with a strong emphasis on realworld, practical examples. Stepbystep explanations are provided for performing important tasks.This book is for web developers familiar with JavascriptIt doesn't cover the history of AngularJS, and it's not a pitch to convince you that AngularJS is the best framework on the entire web. It's a guide to help you learn everything you need to know about AngularJS in as few pa

  1. Automated Angular Momentum Recoupling Algebra

    Science.gov (United States)

    Williams, H. T.; Silbar, Richard R.

    1992-04-01

    We present a set of heuristic rules for algebraic solution of angular momentum recoupling problems. The general problem reduces to that of finding an optimal path from one binary tree (representing the angular momentum coupling scheme for the reduced matrix element) to another (representing the sub-integrals and spin sums to be done). The method lends itself to implementation on a microcomputer, and we have developed such an implementation using a dialect of LISP. We describe both how our code, called RACAH, works and how it appears to the user. We illustrate the use of RACAH for several transition and scattering amplitude matrix elements occurring in atomic, nuclear, and particle physics.

  2. Spin polarization at the interface and tunnel magnetoresistance

    International Nuclear Information System (INIS)

    Itoh, H.; Inoue, J.

    2001-01-01

    We propose that interfacial states of imperfectly oxidized Al ions may exist in ferromagnetic tunnel junctions with Al-O barrier and govern both the spin polarization and tunnel conductance. It is shown that the spin polarization is positive independent of materials and correlates well with the tunnel magnetoresistance

  3. Study of magnetoresistance and conductance of bicrystal grain ...

    Indian Academy of Sciences (India)

    ... is dominated by inelastic tunneling via pairs of manganese atoms and tunneling through disordered oxides. At higher temperatures ( > 175 K), magnetic scattering process is dominating. Decrease of bicrystal grain boundary contribution in magnetoresistance with the increase in temperature is due to enhanced spin-flip ...

  4. Magnetoresistance, electrical conductivity, and Hall effect of glassy carbon

    Energy Technology Data Exchange (ETDEWEB)

    Baker, D.F.

    1983-02-01

    These properties of glassy carbon heat treated for three hours between 1200 and 2700/sup 0/C were measured from 3 to 300/sup 0/K in magnetic fields up to 5 tesla. The magnetoresistance was generally negative and saturated with reciprocal temperature, but still increased as a function of magnetic field. The maximum negative magnetoresistance measured was 2.2% for 2700/sup 0/C material. Several models based on the negative magnetoresistance being proportional to the square of the magnetic moment were attempted; the best fit was obtained for the simplest model combining Curie and Pauli paramagnetism for heat treatments above 1600/sup 0/C. Positive magnetoresistance was found only in less than 1600/sup 0/C treated glassy carbon. The electrical conductivity, of the order of 200 (ohm-cm)/sup -1/ at room temperature, can be empirically written as sigma = A + Bexp(-CT/sup -1/4) - DT/sup -1/2. The Hall coefficient was independent of magnetic field, insensitive to temperature, but was a strong function of heat treatment temperature, crossing over from negative to positive at about 1700/sup 0/C and ranging from -0.048 to 0.126 cm/sup 3//coul. The idea of one-dimensional filaments in glassy carbon suggested by the electrical conductivity is compatible with the present consensus view of the microstructure.

  5. Deposition temperature influence on sputtered nanogranular magnetoresistive composites

    Energy Technology Data Exchange (ETDEWEB)

    Mujika, M. [CEIT and Tecnun (University of Navarra), Manuel de Lardizabal 15, 20018 San Sebastian (Spain)]. E-mail: mmujika@ceit.es; Arana, S. [CEIT and Tecnun (University of Navarra), Manuel de Lardizabal 15, 20018 San Sebastian (Spain); Castano, E. [CEIT and Tecnun (University of Navarra), Manuel de Lardizabal 15, 20018 San Sebastian (Spain)

    2007-09-15

    Among different physical principles magnetic sensors for low magnetic field detection can be based on, granular giant magnetoresistances have been studied due to their high sensitivity to small field changes and gradual magnetoresistance change at low fields. Following this aim, nanogranular Ag-Co thin films, deposited by DC co-sputtering from Ag and Co targets at different deposition temperatures have been tested. Samples have been grown at room temperature, 100 and 200 deg. C and annealed in a mixture of N{sub 2} and H{sub 2} at 200 and 300 deg. C for 45 min. The samples that have shown the best performance have been subjected to two sets of measurements where an external field has been applied in-plane and perpendicular to the film plane. The best performance has been shown by the samples deposited at room temperature and annealed at 300 deg. C, reporting a maximum value of magnetoresistance of 16.7% at 1.4 T and a linear sensitivity of 63%/T between 0.04 and 0.07 T within a magnetoresistance range varying from 1.5% to 3% when subjected to an in-plane external field.

  6. Deposition temperature influence on sputtered nanogranular magnetoresistive composites

    International Nuclear Information System (INIS)

    Mujika, M.; Arana, S.; Castano, E.

    2007-01-01

    Among different physical principles magnetic sensors for low magnetic field detection can be based on, granular giant magnetoresistances have been studied due to their high sensitivity to small field changes and gradual magnetoresistance change at low fields. Following this aim, nanogranular Ag-Co thin films, deposited by DC co-sputtering from Ag and Co targets at different deposition temperatures have been tested. Samples have been grown at room temperature, 100 and 200 deg. C and annealed in a mixture of N 2 and H 2 at 200 and 300 deg. C for 45 min. The samples that have shown the best performance have been subjected to two sets of measurements where an external field has been applied in-plane and perpendicular to the film plane. The best performance has been shown by the samples deposited at room temperature and annealed at 300 deg. C, reporting a maximum value of magnetoresistance of 16.7% at 1.4 T and a linear sensitivity of 63%/T between 0.04 and 0.07 T within a magnetoresistance range varying from 1.5% to 3% when subjected to an in-plane external field

  7. Study of magnetoresistance and conductance of bicrystal grain ...

    Indian Academy of Sciences (India)

    Presence of grain boundary exhibits substantial magnetoresistance ratio (MRR) in the low field and low temperature region. Bicrystal grain boundary contribution in MRR disappears at temperature > 175 K. At low temperature, - characteristic of the microbridge across bicrystal grain boundary is nonlinear. Analysis of ...

  8. Magnetic giant magnetoresistance commercial off the shelf for space applications

    DEFF Research Database (Denmark)

    Michelena, M.D.; Oelschlägel, Wulf; Arruego, I.

    2008-01-01

    The increase of complexity and miniaturizing level of Aerospace platforms make use of commercial off the shelf (COTS) components constitute a plausible alternative to the use of military or rad-tolerant components. In this work, giant magnetoresistance commercial sensors are studied to be used...

  9. Mixed-phase description of colossal magnetoresistive manganites

    Czech Academy of Sciences Publication Activity Database

    Weiáe, A.; Loos, Jan; Fehske, H.

    2003-01-01

    Roč. 68, č. 2 (2003), s. 024402-1 - 021102-6 ISSN 0163-1829 Grant - others:DFG(DE) 436 TSE 113/33/0-2 Institutional research plan: CEZ:AV0Z1010914 Keywords : polarons * metal-insulator transitions * colossal magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.962, year: 2003

  10. High field magnetoresistance in Co-Al-O nanogranular films

    Czech Academy of Sciences Publication Activity Database

    Chayka, Oleksandr; Kraus, Luděk; Lobotka, P.; Sechovsky, V.; Kocourek, Tomáš; Jelínek, Miroslav

    2006-01-01

    Roč. 300, - (2006), s. 293-299 ISSN 0304-8853 R&D Projects: GA AV ČR(CZ) IAA1010204 Institutional research plan: CEZ:AV0Z10100520 Keywords : granular system * superparamagnetism * tunneling magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.212, year: 2006

  11. Tuning spin transport properties and molecular magnetoresistance through contact geometry.

    Science.gov (United States)

    Ulman, Kanchan; Narasimhan, Shobhana; Delin, Anna

    2014-01-28

    Molecular spintronics seeks to unite the advantages of using organic molecules as nanoelectronic components, with the benefits of using spin as an additional degree of freedom. For technological applications, an important quantity is the molecular magnetoresistance. In this work, we show that this parameter is very sensitive to the contact geometry. To demonstrate this, we perform ab initio calculations, combining the non-equilibrium Green's function method with density functional theory, on a dithienylethene molecule placed between spin-polarized nickel leads of varying geometries. We find that, in general, the magnetoresistance is significantly higher when the contact is made to sharp tips than to flat surfaces. Interestingly, this holds true for both resonant and tunneling conduction regimes, i.e., when the molecule is in its "closed" and "open" conformations, respectively. We find that changing the lead geometry can increase the magnetoresistance by up to a factor of ∼5. We also introduce a simple model that, despite requiring minimal computational time, can recapture our ab initio results for the behavior of magnetoresistance as a function of bias voltage. This model requires as its input only the density of states on the anchoring atoms, at zero bias voltage. We also find that the non-resonant conductance in the open conformation of the molecule is significantly impacted by the lead geometry. As a result, the ratio of the current in the closed and open conformations can also be tuned by varying the geometry of the leads, and increased by ∼400%.

  12. Magnetoresistance at artificial interfaces in epitaxial ferromagnetic thin films

    International Nuclear Information System (INIS)

    Fontcuberta, J.; Bibes, M.; Martinez, B.; Trtik, V.; Ferrater, C.; Sanchez, F.; Varela, M.

    2000-01-01

    Epitaxial La 2/3 Sr 1/3 MnO 3 and SrRuO 3 thin films have been grown by laser ablation on single-crystalline SrTiO 3 substrates. Prior to manganite or ruthenate deposition tracks have been patterned on the SrTiO 3 substrate by using an appropriately focused laser beam. In the experiments here reported linear tracks have been formed. The magnetotransport properties of the films, particularly the magnetoresistance, along paths parallel and perpendicular to the track have been extensively investigated and compared to similar data recorded on films grown on bicrystalline STO substrates. Whereas in LSMO a significant low-field tunnel magnetoresistance develops across the artificial interface, in SRO this tunnel contribution is absent. However, a significant high-field magnetoresistance is observed for both metallic and ferromagnetic systems. The results are analysed and discussed within the framework of the current understanding of double exchange and itinerant ferromagnets. Magnetoresistance data for various configurations of the track array are presented

  13. The magnetoresistivity of some rare-earth metals

    International Nuclear Information System (INIS)

    Webber, G.D.

    1978-10-01

    The thesis describes measurements of the low temperature transverse magnetoresistivities of single crystals of rare-earth metals in magnetic fields up to 8 Tesla. A general introduction to the rare-earths, their magnetic properties and a review of the basic theory and mechanism of magnetoresistivity is given. Details of the crystal structure, growth of single crystals and sample mounting method follow. The experimental equipment and measuring techniques are then described. The low temperature transverse magnetoresistivity of polycrystalline lanthanum and single crystal praseodymium for the temperature range 4.2 - 30K is measured. The separation of the spin-disorder and Fermi-surface orbital effect contributions are described and the theoretical and experimental spin-disorder values compared. Magnetoresistivity measurements for neodymium single crystals (4.2 - 30K) are compared with the magnetic properties determined from neutron diffraction studies. Results for gadolinium single crystals (4.2 - 200K) are compared for two different impurity levels and with previous work. (UK)

  14. Giant Magnetoresistance: Basic Concepts, Microstructure, Magnetic Interactions and Applications.

    Science.gov (United States)

    Ennen, Inga; Kappe, Daniel; Rempel, Thomas; Glenske, Claudia; Hütten, Andreas

    2016-06-17

    The giant magnetoresistance (GMR) effect is a very basic phenomenon that occurs in magnetic materials ranging from nanoparticles over multilayered thin films to permanent magnets. In this contribution, we first focus on the links between effect characteristic and underlying microstructure. Thereafter, we discuss design criteria for GMR-sensor applications covering automotive, biosensors as well as nanoparticular sensors.

  15. Shubnikov - de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi

    Science.gov (United States)

    Pavlosiuk, Orest; Kaczorowski, Dariusz; Wiśniewski, Piotr

    2015-01-01

    We present electronic transport and magnetic properties of single crystals of semimetallic half-Heusler phase LuPdBi, having theoretically predicted band inversion requisite for nontrivial topological properties. The compound exhibits superconductivity below a critical temperature Tc = 1.8 K, with a zero-temperature upper critical field Bc2 ≈ 2.3 T. Although superconducting state is clearly reflected in the electrical resistivity and magnetic susceptibility data, no corresponding anomaly can be seen in the specific heat. Temperature dependence of the electrical resistivity suggests existence of two parallel conduction channels: metallic and semiconducting, with the latter making negligible contribution at low temperatures. The magnetoresistance is huge and clearly shows a weak antilocalization effect in small magnetic fields. Above about 1.5 T, the magnetoresistance becomes linear and does not saturate in fields up to 9 T. The linear magnetoresistance is observed up to room temperature. Below 10 K, it is accompanied by Shubnikov-de Haas oscillations. Their analysis reveals charge carriers with effective mass of 0.06 me and a Berry phase very close to π, expected for Dirac-fermion surface states, thus corroborating topological nature of the material. PMID:25778789

  16. Colossal elastoresistance, electroresistance and magnetoresistance in Pr0.5Sr0.5MnO3 thin films

    International Nuclear Information System (INIS)

    Chen, Liping; Guo, Xuexiang; Gao, J.

    2016-01-01

    Pr 0.5 Sr 0.5 MnO 3 thin films on substrates of (001)-oriented LaAlO 3 were epitaxially grown by pulsed laser deposition. It was found that a substrate-induced strain of ~1.3% brings a great resistivity change of ~98% at 25 K. We studied the dependence of resistivity on the applied electric current and magnetic field. In the greatly strained films of 60 nm thickness the electroresistance ER=[ρ(I 1 μA )−ρ(I 1000 μA )]/ρ(I 1 μA ) reaches ~70% at T=25 K, much higher than ER~7% in the strain-relaxed films of 400 nm thickness, implying the strain effect on ER. Also the magnetoresistance of the film falls with strain-relaxation. Therefore the electric properties of the film could be efficiently modified by strain, electric current and magnetic field. All of them may be explained by the effect on the percolative phase separation and competition in the half-doped manganite material. The manganite films located at phase boundary are expected to be an ideal compound for providing practical colossal effects of elastoresistance, electroresistance and magnetoresistance due to the multiphase coexistence. - Highlights: • The electric current-induced electroresistance (ER) and magnetoresistance (MR)studies on PLD grown Pr 0.5 Sr 0.5 MnO 3 /(001) LaAlO 3 films were found to be greatly sensitive to the film thickness arising from the strain. • It is shown that, 60 nm film exhibit compressive in-plane strain which leads to phase separation and hence colossal MR and ER. • Our results suggest that the manganites located at phase boundary may be an ideal compound for providing practical colossal effects of elastoresistance, electroresistance and magnetoresistance.

  17. Colossal Magnetoresistance in thin films of the Mott metal CaVO3

    Science.gov (United States)

    Lu, Jiwei

    2011-03-01

    Bulk Ca VO3 (CVO) is a Pauli paramagnetic metal with a singe 3d electron. Some unusual drastic changes in the magneto-resistance, magnetic susceptibility and the Hall effect have been reported in single crystal CVO. We have simultaneously synthesized epitaxial CVO films grown on three differently oriented SrTi O3 substrates. The temperature dependent conductivity of these CVO films demonstrated very strong Fermi metal behavior and the resistance ratio, defined as R(300 K)/R (2K) was more than 3000. Colossal magneto-resistance (MR) as well as large crystalline anisotropic was observed at low temperatures. The maximum MR, defined as (R(7 T)-R(0 T))/R(0 T)*100 %, was over 1500 % at 2 K and 7 Telsa on the CVO films deposited on a (110) SrTiO3 single crystal substrate, and didn't show any sign of saturation. An MR of over ~ 500 % and ~ 200 % were observed on (111) and (100) orientation films under the same condition, respectively. The MR ratio was much larger than that of single crystal CVO. We will discuss the peculiar MR in association with the magnetic ordering, oxygen stoichiometry and Fermi surface. The author is grateful to the financial support by the ARO.

  18. Tunable magnetoresistance driven by magnetically sensitive negative differential resistance in an asymmetrically coupled single molecule junction

    Science.gov (United States)

    Warner, Ben; El Hallak, Fadi; Sharp, John; Persson, Mats; Fisher, Andrew J.; Hirjibehedin, Cyrus F.

    2014-03-01

    Using scanning tunneling microscopy, we study the effects of interactions between individual magnetic molecules that are separated from an underlying copper surface by a thin-insulating layer of copper nitride (Cu2N). For electrical transport through a junction containing an individual iron phthalocyanine (FePc) molecule on Cu2N, we observe two novel magnetoresistance behaviors that arise from negative differential resistance (NDR) that shifts by unexpectedly large amounts in a magnetic field. Because voltage is dropped asymmetrically in this double barrier junction, the FePc can become transiently charged when its states are aligned with the Fermi energy of the Cu, resulting in the observed NDR effect. Furthermore, the asymmetric coupling magnifies the observed voltage sensitivity of the magnetic field dependence of the NDR - which inherently is on the scale of the Zeeman energy - by almost two orders of magnitude. These findings represent a new basis for making magnetoresistance devices at the single molecule scale. Furthermore, the enhancement of the energy scales created by asymmetric coupling of the junction can be combined with other multi-step tunneling processes to allow for the investigation of other phenomena that normally would be difficult to observe.

  19. Theory of the negative magnetoresistance of ferromagnetic-normal metallic multilayers (invited)

    International Nuclear Information System (INIS)

    Falicov, L.M.; Hood, R.Q.

    1994-01-01

    Transport properties for a system consisting of a ferromagnetic-normal metallic multilayer are theoretically examined. The in-plane conductance of the film is calculated for two configurations; the ferromagnetic layers aligned (i) parallel and (ii) antiparallel to each other. The results explain the giant negative magnetoresistance encountered in these systems when an initial antiparallel arrangement is changed into a parallel configuration by application of an external magnetic field. The calculation depends on (a) geometric parameters (the thicknesses of the layers); (b) intrinsic metal parameters (number of conduction electrons, magnetization and effective masses in the layers); (c) bulk sample properties (conductivity relaxation times); and (d) interface scattering properties (diffuse scattering versus potential scattering at the interfaces). It is found that a large negative magnetoresistance requires, in general, considerable asymmetry in the interface scattering for the two spin orientations. All qualitative features of the experiments are reproduced. Quantitative agreement can be achieved with sensible values of the parameters. The effect can be conceptually explained based on considerations of phase-space availability for an electron of a given spin orientation as it travels through the multilayer sample in the various configurations

  20. Negative to positive magnetoresistance transition in functionalization of carbon nanotube and polyaniline composite

    Science.gov (United States)

    Prasad Maity, Krishna; Tanty, Narendra; Patra, Ananya; Prasad, V.

    2018-03-01

    Electrical resistivity and magnetoresistance(MR) in polyaniline(PANI) with carbon nanotube(CNT) and functionalized carbon nanotube(fCNT) composites have been studied for different weight percentages down to the temperature 4.2 K and up to magnetic field 5 T. Resistivity increases significantly in composite at low temperature due to functionalization of CNT compared to only CNT. Interestingly a transition from negative to positive magnetoresistance has been observed when the filler is changed from pure CNT to functionalized CNT after a certain percentage (10wt%) as the effect of more disorder in fCNT/PANI composite. This result depicts that the MR has strong dependency on disorder in the composite system. The transition of MR has been explained on the basis of polaron-bipolaron model. The long range Coulomb interaction between two polarons screened by disorder in the composite of fCNT/PANI, increases the effective on-site Coulomb repulsion energy to form bipolaron which leads to change the sign of MR from negative to positive.

  1. Observation of Room-Temperature Magnetoresistance in Monolayer MoS2 by Ferromagnetic Gating.

    Science.gov (United States)

    Jie, Wenjing; Yang, Zhibin; Zhang, Fan; Bai, Gongxun; Leung, Chi Wah; Hao, Jianhua

    2017-07-25

    Room-temperature magnetoresistance (MR) effect is observed in heterostructures of wafer-scale MoS 2 layers and ferromagnetic dielectric CoFe 2 O 4 (CFO) thin films. Through the ferromagnetic gating, an MR ratio of -12.7% is experimentally achieved in monolayer MoS 2 under 90 kOe magnetic field at room temperature (RT). The observed MR ratio is much higher than that in previously reported nonmagnetic metal coupled with ferromagnetic insulator, which generally exhibited MR ratio of less than 1%. The enhanced MR is attributed to the spin accumulation at the heterostructure interface and spin injection to the MoS 2 layers by the strong spin-orbit coupling effect. The injected spin can contribute to the spin current and give rise to the MR by changing the resistance of MoS 2 layers. Furthermore, the MR effect decreases as the thickness of MoS 2 increases, and the MR ratio becomes negligible in MoS 2 with thickness more than 10 layers. Besides, it is interesting to find a magnetic field direction dependent spin Hall magnetoresistance that stems from a combination of the spin Hall and the inverse spin Hall effects. Our research provides an insight into exploring RT MR in monolayer materials, which should be helpful for developing ultrathin magnetic storage devices in the atomically thin limit.

  2. Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene

    Science.gov (United States)

    Prarokijjak, Worasak; Soodchomshom, Bumned

    2018-04-01

    Spin-valley transport and magnetoresistance are investigated in silicene-based N/TB/N/TB/N junction where N and TB are normal silicene and topological barriers. The topological phase transitions in TB's are controlled by electric, exchange fields and circularly polarized light. As a result, we find that by applying electric and exchange fields, four groups of spin-valley currents are perfectly filtered, directly induced by topological phase transitions. Control of currents, carried by single, double and triple channels of spin-valley electrons in silicene junction, may be achievable by adjusting magnitudes of electric, exchange fields and circularly polarized light. We may identify that the key factor behind the spin-valley current filtered at the transition points may be due to zero and non-zero Chern numbers. Electrons that are allowed to transport at the transition points must obey zero-Chern number which is equivalent to zero mass and zero-Berry's curvature, while electrons with non-zero Chern number are perfectly suppressed. Very large magnetoresistance dips are found directly induced by topological phase transition points. Our study also discusses the effect of spin-valley dependent Hall conductivity at the transition points on ballistic transport and reveals the potential of silicene as a topological material for spin-valleytronics.

  3. Effects of magnetic barriers on transport and magnetoresistance in a two-dimensional electronic device

    Directory of Open Access Journals (Sweden)

    H. L. He

    2016-05-01

    Full Text Available We study theoretically the giant magnetoresistance (GMR effect of 2-dimensional electron system (2DES by the transfer matrix method. To produce the inhomogeneous magnetic field, two magnetic strips are pre-deposited on the surface of 2DES. In our work, we fix the magnetization M in one magnetic strip and adjust the tilting angle θ of magnetization in the other. The result shows that the electronic transmission and conductance vary significantly for different θ. The minimum conductance can be obtained at θ = π which corresponds to the magnetization anti-parallel alignment. The magnetoresistance ratio (MRR calculation also indicates we would get the maximum in that case. Furthermore, we consider the magnetization M dependence of MRR in this work. When M increases, MRR peaks get higher and broader and more numbers of peaks can be observed. These results offer an alternative to get a tunable GMR device which can be controlled by adjusting the magnetization M and the magnetized angle θ.

  4. Measurement of the giant magnetoresistance effect in cobalt-silver magnetic nanostructures: nanoparticles

    Science.gov (United States)

    Garcia-Torres, Jose; Vallés, Elisa; Gómez, Elvira

    2012-10-01

    Cobalt-silver (Co-Ag) core-shell nanoparticles with different silver thicknesses were prepared by the microemulsion method in a two-step reduction process. Transmission electron microscopy (TEM) characterization revealed the almost monodispersity and nanometric size (in the range 3-5 nm depending on the shell thickness) of the synthesized nanoparticles. However, it was the use of high-resolution TEM that revealed the correct core-shell formation of the nanometric material. The selected area electron diffraction pattern indicated the fcc (face-centered cubic) and hcp (hexagonal close packed) nature for silver and cobalt, respectively. Cyclic voltammetry also allowed the correct core-shell formation to be assured. The magnetic properties revealed the presence of both superparamagnetic and ferromagnetic contributions. Because of the lack of methodology, it was necessary to develop a method to measure the magnetotransport properties of the prepared nanoparticles. The strategy which followed was successful as it was possible to measure these properties: giant magnetoresistance values of 0.1% at room temperature were obtained. The numerical analysis of magnetic and magnetoresistance data indicated the presence of superparamagnetic particles showing interaction among the magnetic moments.

  5. Electrical Transport and Magnetoresistance in Single-Wall Carbon Nanotubes Films

    Directory of Open Access Journals (Sweden)

    Vitaly KSENEVICH

    2014-06-01

    Full Text Available Electrical transport properties and magnetoresistance of single-wall carbon nanotubes (SWCNT films were investigated within temperature range (2 – 300 K and in magnetic fields up to 8 T. A crossover between metallic (dR/dT > 0 and non-metallic (dR/dT < 0 temperature dependence of the resistance as well as low-temperature saturation of the resistance in high bias regime indicated on the diminishing of role of the contact barriers between individual nanotubes essential for the charge transport in SWCNT arrays. The magnetoresistance (MR data demonstrated influence of weak localization and electron-electron interactions on charge transport properties in SWCNT films. The low-field negative MR with positive upturn was observed at low temperatures. At T > 10 K only negative MR was observed in the whole range of available magnetic fields. The negative MR can be approximated using 1D weak localization (WL model. The low temperature positive MR is induced by contribution from electron-electron interactions. DOI: http://dx.doi.org/10.5755/j01.ms.20.2.6311

  6. Quasi-linear magnetoresistance and the violation of Kohler's rule in the quasi-one-dimensional Ta₄Pd₃Te₁₆ superconductor.

    Science.gov (United States)

    Xu, Xiaofeng; Jiao, W H; Zhou, N; Guo, Y; Li, Y K; Dai, Jianhui; Lin, Z Q; Liu, Y J; Zhu, Zengwei; Lu, Xin; Yuan, H Q; Cao, Guanghan

    2015-08-26

    We report on the quasi-linear in field intrachain magnetoresistance in the normal state of a quasi-one-dimensional superconductor Ta4Pd3Te16 (Tc ~ 4.6 K). Both the longitudinal and transverse in-chain magnetoresistance shows a power-law dependence, Δρ∝B(α) with the exponent α close to 1 over a wide temperature and field range. The magnetoresistance shows no sign of saturation up to 50 T studied. The linear magnetoresistance observed in Ta4Pd3Te16 is found to be overall inconsistent with the interpretations based on the Dirac fermions in the quantum limit, charge conductivity fluctuations as well as quantum electron-electron interference. Moreover, it is observed that the Kohler's rule, regardless of the field orientations, is violated in its normal state. This result suggests the loss of charge carriers in the normal state of this chain-containing compound, due presumably to the charge-density-wave fluctuations.

  7. Classical and quantum mechanical behaviour in the low-field magneto-resistance in open quantum dots

    International Nuclear Information System (INIS)

    Brunner, R.

    2005-09-01

    Electronic transport through open dots has received much attention in recent years. An interesting aspect of this research focuses on the use of such low-dimensional systems to probe the connection between semi-classical physics and quantum mechanics. The purpose of this thesis is to understand the transport properties in a ballistic open quantum dot and dot arrays and to find clear evidence that, although the system is open, still discrete energy states are present. This is achieved by using a classical model calculation and performing DC and microwave experiments in the single open quantum dot and 3-dot array. By comparing the magneto-resistance obtained from the experiment with the calculated magneto-resistance the confining potential of the open quantum dot is found to be a soft parabolic potential. Peaks in the low-field magneto-resistance are attributed to backscattering events in the open dot. At certain magnetic fields classically calculated trajectories are obtained which are backscattered. As a consequence the magneto-resistance is raised. As a consequence of a stability analysis by calculating the Poincare section and estimating the Lyapunov exponent, the single open quantum dot is identified as an integrable system. In the case of an open quantum dot array the symmetry of the single dot is broken. Depending on the magnetic field, the open quantum dot array is characterized as an integrable system or a nonintegrable system with mixed phase space. The mixed phase space exists of chaotic and quasi-periodic trajectories. The quasi-periodic trajectories are attributed to Kolmogorov-Arnol'd-Moser (KAM) islands. These islands are completely decoupled from the surrounding and therefore classically inaccessible. We argue that the closed orbits which generate a series of delta functions in the density of states might be associated with discrete energy states in the open quantum dot. To search for discrete energy states in the open quantum dot microwave

  8. Magnetoresistance anisotropy of ultrathin epitaxial La0.83Sr0.17MnO3 films

    Science.gov (United States)

    Balevičius, Saulius; Tornau, Evaldas E.; ŽurauskienÄ--, Nerija; Stankevič, Voitech; Šimkevičius, Česlovas; TolvaišienÄ--, Sonata; PlaušinaitienÄ--, Valentina; Abrutis, Adulfas

    2017-12-01

    We present the study of temperature dependence of resistivity (ρ), magnetoresistance (MR), and magnetoresistance anisotropy (AMR) of thin epitaxial La0.83Sr0.17MnO3 films. The films with thickness from 4 nm to 140 nm were grown on an NdGaO3 (001) substrate by a pulsed injection metal organic chemical vapor deposition technique. We demonstrate that the resistivity of these films significantly increases and the temperature Tm of the resistivity maximum in ρ(T) dependence decreases with the decrease of film thickness. The anisotropy of ρ(T) dependence with respect to the electrical current direction along the [100] or [010] crystallographic axis of the film is found for ultrathin films (4-8 nm) at temperatures close to Tm. Both MR and AMR, measured in magnetic fields up to 0.7 T applied in the film plane parallel and perpendicular to the current direction, have shown strong dependence on the film thickness. It was also found that the anisotropy of magnetoresistance could change its sign from positive (thicker films) to negative (ultrathin films) and obtain very small values at a certain intermediate thickness (20 nm) when the current is flowing perpendicular to the easy magnetization axis [010]. While the positive AMR effect was assigned to the conventional magnetic ordering of manganites, the AMR of ultrathin films was influenced by the pinning of magnetization to the easy axis. The temperature dependence and change of the AMR sign with film thickness is shown to be well described by the two-region model (more strained closer to the film substrate and more relaxed further from it) assuming that the relative concentration of both regions changes with the film thickness. The possibility to use the effect of the AMR compensation for the development of scalar in-plane magnetic field sensors is discussed.

  9. Angular trapping of anisometric nano-objects in a fluid.

    Science.gov (United States)

    Celebrano, Michele; Rosman, Christina; Sönnichsen, Carsten; Krishnan, Madhavi

    2012-11-14

    We demonstrate the ability to trap, levitate, and orient single anisometric nanoscale objects with high angular precision in a fluid. An electrostatic fluidic trap confines a spherical object at a spatial location defined by the minimum of the electrostatic system free energy. For an anisometric object and a potential well lacking angular symmetry, the system free energy can further strongly depend on the object's orientation in the trap. Engineering the morphology of the trap thus enables precise spatial and angular confinement of a single levitating nano-object, and the process can be massively parallelized. Since the physics of the trap depends strongly on the surface charge of the object, the method is insensitive to the object's dielectric function. Furthermore, levitation of the assembled objects renders them amenable to individual manipulation using externally applied optical, electrical, or hydrodynamic fields, raising prospects for reconfigurable chip-based nano-object assemblies.

  10. Spacecraft Angular Velocity Estimation Algorithm Based on Orientation Quaternion Measurements

    Directory of Open Access Journals (Sweden)

    M. V. Li

    2016-01-01

    Full Text Available The spacecraft (SC mission involves providing the appropriate orientation and stabilization of the associated axes in space. One of the main sources of information for the attitude control system is the angular rate sensor blocks. One way to improve a reliability of the system is to provide a back up of the control algorithms in case of failure of these blocks. To solve the problem of estimation of SP angular velocity vector in the inertial system of coordinates with a lack of information from the angular rate sensors is supposed the use of orientation data from the star sensors; in this case at each clock of the onboard digital computer. The equations in quaternions are used to describe the kinematics of rotary motion. Their approximate solution is used to estimate the angular velocity vector. Methods of modal control and multi-dimensional decomposition of a control object are used to solve the problem of observation and identification of the angular rates. These methods enabled us to synthesize the SP angular velocity vector estimation algorithm and obtain the equations, which relate the error quaternion with the calculated estimate of the angular velocity. Mathematical modeling was carried out to test the algorithm. Cases of different initial conditions were simulated. Time between orientation quaternion measurements and angular velocity of the model was varied. The algorithm was compared with a more accurate algorithm, built on more complete equations. Graphs of difference in angular velocity estimation depending on the number of iterations are presented. The difference in angular velocity estimation is calculated from results of the synthesized algorithm and the algorithm for more accurate equations. Graphs of error distribution for angular velocity estimation with initial conditions being changed are also presented, and standard deviations of estimation errors are calculated. The synthesized algorithm is inferior in accuracy assessment to

  11. Inhomogeneous Broadening in Perturbed Angular Correlation Spectroscopy

    Science.gov (United States)

    Bunker, Austin; Adams, Mike; Hodges, Jeffery; Park, Tyler; Stufflebeam, Michael; Evenson, William; Matheson, Phil; Zacate, Matthew

    2009-10-01

    Our research concerns the effect of a static distribution of defects on the net electric field gradient (EFG) within crystal structures. Defects and vacancies perturb the distribution of gamma rays emitted from radioactive probe nuclei within the crystal. These defects and vacancies produce a net EFG at the site of the probe which causes the magnetic quadrupole moment of the nucleus of the probe to precess about the EFG. The net EFG, which is strongly dependent upon the defect concentration, perturbs the angular correlation (PAC) of the gamma rays, and is seen in the damping of the perturbation function, G2(t), in time and broadening of the spectral peaks in the Fourier transform. We have used computer simulations to study the probability distribution of EFG tensor components in order to uncover the concentration dependence of G2(t). This in turn can be used to analyze experimental PAC data and quantitatively describe properties of the crystal.

  12. Nuclear scissors modes and hidden angular momenta

    Energy Technology Data Exchange (ETDEWEB)

    Balbutsev, E. B., E-mail: balbuts@theor.jinr.ru; Molodtsova, I. V. [Joint Institute for Nuclear Research (Russian Federation); Schuck, P. [Université Paris-Sud, Institut de Physique Nucléaire, IN2P3–CNRS (France)

    2017-01-15

    The coupled dynamics of low-lying modes and various giant resonances are studied with the help of the Wigner Function Moments method generalized to take into account spin degrees of freedom and pair correlations simultaneously. The method is based on Time-Dependent Hartree–Fock–Bogoliubov equations. The model of the harmonic oscillator including spin–orbit potential plus quadrupole–quadrupole and spin–spin interactions is considered. New low-lying spin-dependent modes are analyzed. Special attention is paid to the scissors modes. A new source of nuclear magnetism, connected with counter-rotation of spins up and down around the symmetry axis (hidden angular momenta), is discovered. Its inclusion into the theory allows one to improve substantially the agreement with experimental data in the description of energies and transition probabilities of scissors modes.

  13. Photoelectron and ICD electron angular distributions from fixed-in-space neon dimers

    Energy Technology Data Exchange (ETDEWEB)

    Jahnke, T [Institut fuer Kernphysik, J W Goethe-Universitaet Frankfurt am Main, Max-von-Laue-Str. 1, D-60438 Frankfurt (Germany); Czasch, A [Institut fuer Kernphysik, J W Goethe-Universitaet Frankfurt am Main, Max-von-Laue-Str. 1, D-60438 Frankfurt (Germany); Schoeffler, M [Institut fuer Kernphysik, J W Goethe-Universitaet Frankfurt am Main, Max-von-Laue-Str. 1, D-60438 Frankfurt (Germany); Schoessler, S [Institut fuer Kernphysik, J W Goethe-Universitaet Frankfurt am Main, Max-von-Laue-Str. 1, D-60438 Frankfurt (Germany); Kaesz, M [Institut fuer Kernphysik, J W Goethe-Universitaet Frankfurt am Main, Max-von-Laue-Str. 1, D-60438 Frankfurt (Germany); Titze, J [Institut fuer Kernphysik, J W Goethe-Universitaet Frankfurt am Main, Max-von-Laue-Str. 1, D-60438 Frankfurt (Germany); Kreidi, K [Institut fuer Kernphysik, J W Goethe-Universitaet Frankfurt am Main, Max-von-Laue-Str. 1, D-60438 Frankfurt (Germany); Grisenti, R E [Institut fuer Kernphysik, J W Goethe-Universitaet Frankfurt am Main, Max-von-Laue-Str. 1, D-60438 Frankfurt (Germany); Staudte, A [Steacie Institute for Molecular Sciences, 100 Sussex Drive, Ottawa (Canada); Jagutzki, O [Institut fuer Kernphysik, J W Goethe-Universitaet Frankfurt am Main, Max-von-Laue-Str. 1, D-60438 Frankfurt (Germany); Schmidt, L Ph H [Institut fuer Kernphysik, J W Goethe-Universitaet Frankfurt am Main, Max-von-Laue-Str. 1, D-60438 Frankfurt (Germany); Semenov, S K [State University of Aerospace Instrumentation, 190000 St. Petersburg (Russian Federation); Cherepkov, N A [State University of Aerospace Instrumentation, 190000 St. Petersburg (Russian Federation); Schmidt-Boecking, H [Institut fuer Kernphysik, J W Goethe-Universitaet Frankfurt am Main, Max-von-Laue-Str. 1, D-60438 Frankfurt (Germany); Doerner, R [Institut fuer Kernphysik, J W Goethe-Universitaet Frankfurt am Main, Max-von-Laue-Str. 1, D-60438 Frankfurt (Germany)

    2007-07-07

    We report on molecular frame angular distributions of 2s photoelectrons and electrons emitted by interatomic Coulombic decay from neon dimers. We found that the measured angular distribution of the photoelectron strongly depends on the environment of the cluster. The experimental results are in excellent agreement with frozen core Hartree-Fock calculations. The ICD electrons show slight variations in their angular distribution for different kinetic energies.

  14. Tunneling Negative Magnetoresistance via δ Doping in a Graphene-Based Magnetic Tunnel Junction

    International Nuclear Information System (INIS)

    Yuan Jian-Hui; Chen Ni; Mo Hua; Zhang Yan; Zhang Zhi-Hai

    2016-01-01

    We investigate the tunneling magnetoresistance via δ doping in a graphene-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the δ doping. Also, both the transmission probability and the conductance at the parallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration, which implies a large negative magnetoresistance for this device. The results show that the negative magnetoresistance of over 300% at B = 1.0 T is observed by choosing suitable doped parameters, and the temperature plays an important role in the magnetoresistance. Thus it is possible to open a way to effectively manipulate the magnetoresistance devices, and to make a type of magnetoresistance device by controlling the structural parameter of the δ doping. (paper)

  15. Anomalous magnetoresistance effect in sputtered TbFeCo relating to dispersed magnetic moment

    International Nuclear Information System (INIS)

    Yumoto, S.; Toki, K.; Okada, O.; Gokan, H.

    1988-01-01

    The electric resistance is sputtered TbFeCo has been measured at room temperature as a function of magnetic field perpendicular to the film plane. Two kinds of anomalous magnetoresistance have been observed. One is a magnetoresistance peak in the magnetization reversal region. The other is reversible change proportional to the applied magnetic field, appearing in the other region. The magnetoresistance peak agrees well with a curve calculated from experimental Hall loop, using a phenomenological relation between anomalous magnetoresistance and anomalous Hall voltage. The magnetoresistance peak is found to originate from magnetic domain walls. The linear magnetoresistance change for TM dominant samples appears in a direction opposite to that for RE dominant samples. The linear change can't be derived from Hall loop

  16. Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor chromium arsenide.

    Science.gov (United States)

    Niu, Q; Yu, W C; Yip, K Y; Lim, Z L; Kotegawa, H; Matsuoka, E; Sugawara, H; Tou, H; Yanase, Y; Goh, Swee K

    2017-06-05

    In conventional metals, modification of electron trajectories under magnetic field gives rise to a magnetoresistance that varies quadratically at low field, followed by a saturation at high field for closed orbits on the Fermi surface. Deviations from the conventional behaviour, for example, the observation of a linear magnetoresistance, or a non-saturating magnetoresistance, have been attributed to exotic electron scattering mechanisms. Recently, linear magnetoresistance has been observed in many Dirac materials, in which the electron-electron correlation is relatively weak. The strongly correlated helimagnet CrAs undergoes a quantum phase transition to a nonmagnetic superconductor under pressure. Here we observe, near the magnetic instability, a large and non-saturating quasilinear magnetoresistance from the upper critical field to 14 T at low temperatures. We show that the quasilinear magnetoresistance may arise from an intricate interplay between a nontrivial band crossing protected by nonsymmorphic crystal symmetry and strong magnetic fluctuations.

  17. On Dunkl angular momenta algebra

    Energy Technology Data Exchange (ETDEWEB)

    Feigin, Misha [School of Mathematics and Statistics, University of Glasgow,15 University Gardens, Glasgow G12 8QW (United Kingdom); Hakobyan, Tigran [Yerevan State University,1 Alex Manoogian, 0025 Yerevan (Armenia); Tomsk Polytechnic University,Lenin Ave. 30, 634050 Tomsk (Russian Federation)

    2015-11-17

    We consider the quantum angular momentum generators, deformed by means of the Dunkl operators. Together with the reflection operators they generate a subalgebra in the rational Cherednik algebra associated with a finite real reflection group. We find all the defining relations of the algebra, which appear to be quadratic, and we show that the algebra is of Poincaré-Birkhoff-Witt (PBW) type. We show that this algebra contains the angular part of the Calogero-Moser Hamiltonian and that together with constants it generates the centre of the algebra. We also consider the gl(N) version of the subalgebra of the rational Cherednik algebra and show that it is a non-homogeneous quadratic algebra of PBW type as well. In this case the central generator can be identified with the usual Calogero-Moser Hamiltonian associated with the Coxeter group in the harmonic confinement.

  18. Phonons with orbital angular momentum

    International Nuclear Information System (INIS)

    Ayub, M. K.; Ali, S.; Mendonca, J. T.

    2011-01-01

    Ion accoustic waves or phonon modes are studied with orbital angular momentum (OAM) in an unmagnetized collissionless uniform plasma, whose constituents are the Boltzmann electrons and inertial ions. For this purpose, we have employed the fluid equations to obtain a paraxial equation in terms of ion density perturbations and discussed its Gaussian beam and Laguerre-Gauss (LG) beam solutions. Furthermore, an approximate solution for the electrostatic potential problem is presented, allowing to express the components of the electric field in terms of LG potential perturbations. The energy flux due to phonons is also calculated and the corresponding OAM is derived. Numerically, it is shown that the parameters such as azimuthal angle, radial and angular mode numbers, and beam waist, strongly modify the profiles of the phonon LG potential. The present results should be helpful in understanding the phonon mode excitations produced by Brillouin backscattering of laser beams in a uniform plasma.

  19. Angular momentum in QGP holography

    Directory of Open Access Journals (Sweden)

    Brett McInnes

    2014-10-01

    Full Text Available The quark chemical potential is one of the fundamental parameters describing the quark–gluon plasma produced by sufficiently energetic heavy-ion collisions. It is not large at the extremely high temperatures probed by the LHC, but it plays a key role in discussions of the beam energy scan programmes at the RHIC and other facilities. On the other hand, collisions at such energies typically (that is, in peripheral collisions give rise to very high values of the angular momentum density. Here we explain that holographic estimates of the quark chemical potential of a rotating sample of plasma can be very considerably improved by taking the angular momentum into account.

  20. AngularJS test-driven development

    CERN Document Server

    Chaplin, Tim

    2015-01-01

    This book is for developers who want to learn about AngularJS development by applying testing techniques. You are assumed to have a basic knowledge and understanding of HTML, JavaScript, and AngularJS.

  1. Interaction-induced huge magnetoresistance in a high mobility two-dimensional electron gas

    Energy Technology Data Exchange (ETDEWEB)

    Bockhorn, L.; Haug, R. J. [Institut für Festkörperphysik, Leibniz Universität Hannover, D-30167 Hannover (Germany); Gornyi, I. V. [Institut für Nanotechnologie, Karlsruher Institut of Technology, D-76021 Karlsruhe (Germany); Schuh, D. [Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93053 Regensburg (Germany); Wegscheider, W. [ETH Zürich (Switzerland)

    2013-12-04

    A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a GaAs/Al{sub 0.3}Ga{sub 0.7}As quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder.

  2. Magnetoresistance of amorphous CuZr: weak localization in a three dimensional system

    International Nuclear Information System (INIS)

    Bieri, J.B.; Fert, A.; Creuzet, G.

    1984-01-01

    Observations of anomalous magnetoresistance in amorphous CuZr at low temperature are reported. The magnetoresistance can be precisely accounted for in theoretical models of localization for 3-dimensional metallic systems in the presence of strong spin-orbit interactions (with a significant additional contribution from the quenching of superconducting fluctuations at the lowest temperatures). Magnetoresistance measurements on various other systems show that such 3-dimensional localization effects are very generally observed in amorphous alloys. (author)

  3. Angular Momentum of Topologically Structured Darkness.

    Science.gov (United States)

    Alperin, Samuel N; Siemens, Mark E

    2017-11-17

    We theoretically analyze and experimentally measure the extrinsic angular momentum contribution of topologically structured darkness found within fractional vortex beams, and show that this structured darkness can be explained by evanescent waves at phase discontinuities in the generating optic. We also demonstrate the first direct measurement of the intrinsic orbital angular momentum of light with both intrinsic and extrinsic angular momentum, and explain why the total orbital angular momenta of fractional vortices do not match the winding number of their generating phases.

  4. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    Directory of Open Access Journals (Sweden)

    Ahmed Alfadhel

    2016-05-01

    Full Text Available A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS, is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature.

  5. A Magnetoresistive Tactile Sensor for Harsh Environment Applications

    KAUST Repository

    Alfadhel, Ahmed

    2016-05-07

    A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR) sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS), is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient. When the cilia come in contact with a surface, they deflect in compliance with the surface topology. This yields a change of the GMR sensor signal, enabling the detection of extremely fine features. The spin-valve is covered with a passivation layer, which enables adequate performance in spite of harsh environmental conditions, as demonstrated in this paper for high temperature.

  6. Wheatstone bridge giant-magnetoresistance based cell counter.

    Science.gov (United States)

    Lee, Chiun-Peng; Lai, Mei-Feng; Huang, Hao-Ting; Lin, Chi-Wen; Wei, Zung-Hang

    2014-07-15

    A Wheatstone bridge giant magnetoresistance (GMR) biosensor was proposed here for the detection and counting of magnetic cells. The biosensor was made of a top-pinned spin-valve layer structure, and it was integrated with a microchannel possessing the function of hydrodynamic focusing that allowed the cells to flow in series one by one and ensured the accuracy of detection. Through measuring the magnetoresistance variation caused by the stray field of the magnetic cells that flowed through the microchannel above the GMR biosensor, we can not only detect and count the cells but we can also recognize cells with different magnetic moments. In addition, a magnetic field gradient was applied for the separation of different cells into different channels. Copyright © 2014 Elsevier B.V. All rights reserved.

  7. Giant negative magnetoresistance in Ni(quinoline-8-selenoate)2.

    Science.gov (United States)

    Black, Nicholas; Daiki, Tonouchi; Matsushita, Michio M; Woollins, J Derek; Awaga, Kunio; Robertson, Neil

    2017-12-20

    The magnetic, structural, conductivity and magnetoresistance properties of [Ni(quinoline-8-selenoate) 2 ] ([Ni(qs) 2 ]) have been studied. Despite the insolubility of the material necessitating its study as a powdered sample, a remarkably high conductivity has been measured. The conductivity is an order of magnitude greater than the thin-film processable thiol analogue previously reported and has been interpreted through the same space-charge limited conduction mechanism with charges injected from the electrodes. The introduction of selenium, results in a material with conductivity approaching metallic due to the enhanced interaction between adjacent molecules. Additionally, under an applied magnetic field, the material displays a negative magnetoresistance effect above 35% at 2 K. The effect can still be observed at 200 K and is interpreted in terms of a double-exchange mechanism.

  8. Enhanced magnetoresistance in the binary semimetal NbAs2 due to improved crystal quality

    Science.gov (United States)

    Yokoi, K.; Murakawa, H.; Komada, M.; Kida, T.; Hagiwara, M.; Sakai, H.; Hanasaki, N.

    2018-02-01

    We have observed an extremely large magnetoresistance exceeding 1.9 million at 1.7 K at 40 T for a single crystal of the binary semimetal NbAs2. The magnetoresistive behavior for this compound is quantitatively reproduced by a semiclassical two-carrier model in which the significant enhancement of magnetoresistance is attributed to the almost full compensation of the hole and electron densities (0.994 6 ×105cm2 /V .s ). Our results indicate that binary semimetals with higher carrier densities have a great potential for exhibiting a further divergent increase in magnetoresistance merely through an improvement in crystal quality.

  9. Spin–orbit coupling induced magnetoresistance oscillation in a dc biased two-dimensional electron system

    International Nuclear Information System (INIS)

    Wang, C M; Lei, X L

    2014-01-01

    We study dc-current effects on the magnetoresistance oscillation in a two-dimensional electron gas with Rashba spin-orbit coupling, using the balance-equation approach to nonlinear magnetotransport. In the weak current limit the magnetoresistance exhibits periodical Shubnikov-de Haas oscillation with changing Rashba coupling strength for a fixed magnetic field. At finite dc bias, the period of the oscillation halves when the interbranch contribution to resistivity dominates. With further increasing current density, the oscillatory resistivity exhibits phase inversion, i.e., magnetoresistivity minima (maxima) invert to maxima (minima) at certain values of the dc bias, which is due to the current-induced magnetoresistance oscillation. (paper)

  10. Magnetic anisotropy and magnetoresistance in Co-based multilayers: a polarised neutron reflectivity study

    International Nuclear Information System (INIS)

    Yusuf, S.M.

    2000-01-01

    We have studied giant magnetoresistance (GMR) and anisotropic magnetoresistance (AMR) effects by carrying out magnetization, magnetoresistance and polarized neutron reflectivity measurements on epitaxial Co/Re multilayers. Polarized neutron reflectivity study with polarization analysis gives a direct way to sense the direction of sublattice magnetization and coupling between magnetic layers. The evolution of magnetic structure as a function of the strength and direction of the applied magnetic field has been studied. The AMR effect observed in magnetoresistance study has been explained in the light of observed magnetic structure. (author)

  11. Orbital angular momentum of general astigmatic modes

    International Nuclear Information System (INIS)

    Visser, Jorrit; Nienhuis, Gerard

    2004-01-01

    We present an operator method to obtain complete sets of astigmatic Gaussian solutions of the paraxial wave equation. In case of general astigmatism, the astigmatic intensity and phase distribution of the fundamental mode differ in orientation. As a consequence, the fundamental mode has a nonzero orbital angular momentum, which is not due to phase singularities. Analogous to the operator method for the quantum harmonic oscillator, the corresponding astigmatic higher-order modes are obtained by repeated application of raising operators on the fundamental mode. The nature of the higher-order modes is characterized by a point on a sphere, in analogy with the representation of polarization on the Poincare sphere. The north and south poles represent astigmatic Laguerre-Gaussian modes, similar to circular polarization on the Poincare sphere, while astigmatic Hermite-Gaussian modes are associated with points on the equator, analogous to linear polarization. We discuss the propagation properties of the modes and their orbital angular momentum, which depends on the degree of astigmatism and on the location of the point on the sphere

  12. ANGULAR MOMENTUM AND GALAXY FORMATION REVISITED

    International Nuclear Information System (INIS)

    Romanowsky, Aaron J.; Fall, S. Michael

    2012-01-01

    Motivated by a new wave of kinematical tracers in the outer regions of early-type galaxies (ellipticals and lenticulars), we re-examine the role of angular momentum in galaxies of all types. We present new methods for quantifying the specific angular momentum j, focusing mainly on the more challenging case of early-type galaxies, in order to derive firm empirical relations between stellar j * and mass M * (thus extending earlier work by Fall). We carry out detailed analyses of eight galaxies with kinematical data extending as far out as 10 effective radii, and find that data at two effective radii are generally sufficient to estimate total j * reliably. Our results contravene suggestions that ellipticals could harbor large reservoirs of hidden j * in their outer regions owing to angular momentum transport in major mergers. We then carry out a comprehensive analysis of extended kinematic data from the literature for a sample of ∼100 nearby bright galaxies of all types, placing them on a diagram of j * versus M * . The ellipticals and spirals form two parallel j * -M * tracks, with log-slopes of ∼0.6, which for the spirals are closely related to the Tully-Fisher relation, but for the ellipticals derives from a remarkable conspiracy between masses, sizes, and rotation velocities. The ellipticals contain less angular momentum on average than spirals of equal mass, with the quantitative disparity depending on the adopted K-band stellar mass-to-light ratios of the galaxies: it is a factor of ∼3-4 if mass-to-light ratio variations are neglected for simplicity, and ∼7 if they are included. We decompose the spirals into disks and bulges and find that these subcomponents follow j * -M * trends similar to the overall ones for spirals and ellipticals. The lenticulars have an intermediate trend, and we propose that the morphological types of galaxies reflect disk and bulge subcomponents that follow separate, fundamental j * -M * scaling relations. This provides a

  13. ANGULAR MOMENTUM AND GALAXY FORMATION REVISITED

    Energy Technology Data Exchange (ETDEWEB)

    Romanowsky, Aaron J. [University of California Observatories, 1156 High Street, Santa Cruz, CA 95064 (United States); Fall, S. Michael [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States)

    2012-12-15

    Motivated by a new wave of kinematical tracers in the outer regions of early-type galaxies (ellipticals and lenticulars), we re-examine the role of angular momentum in galaxies of all types. We present new methods for quantifying the specific angular momentum j, focusing mainly on the more challenging case of early-type galaxies, in order to derive firm empirical relations between stellar j{sub *} and mass M{sub *} (thus extending earlier work by Fall). We carry out detailed analyses of eight galaxies with kinematical data extending as far out as 10 effective radii, and find that data at two effective radii are generally sufficient to estimate total j{sub *} reliably. Our results contravene suggestions that ellipticals could harbor large reservoirs of hidden j{sub *} in their outer regions owing to angular momentum transport in major mergers. We then carry out a comprehensive analysis of extended kinematic data from the literature for a sample of {approx}100 nearby bright galaxies of all types, placing them on a diagram of j{sub *} versus M{sub *}. The ellipticals and spirals form two parallel j{sub *}-M{sub *} tracks, with log-slopes of {approx}0.6, which for the spirals are closely related to the Tully-Fisher relation, but for the ellipticals derives from a remarkable conspiracy between masses, sizes, and rotation velocities. The ellipticals contain less angular momentum on average than spirals of equal mass, with the quantitative disparity depending on the adopted K-band stellar mass-to-light ratios of the galaxies: it is a factor of {approx}3-4 if mass-to-light ratio variations are neglected for simplicity, and {approx}7 if they are included. We decompose the spirals into disks and bulges and find that these subcomponents follow j{sub *}-M{sub *} trends similar to the overall ones for spirals and ellipticals. The lenticulars have an intermediate trend, and we propose that the morphological types of galaxies reflect disk and bulge subcomponents that follow

  14. AngularJS web application development

    CERN Document Server

    Darwin, Peter Bacon

    2013-01-01

    The book will be a step-by-step guide showing the readers how to build a complete web app with AngularJSJavaScript developers who want to learn AngularJS for developing web apps. Knowledge of JavaScript and HTML is expected. No knowledge of AngularJS is required.

  15. Extreme magnetoresistance in magnetic rare-earth monopnictides

    Science.gov (United States)

    Ye, Linda; Suzuki, Takehito; Wicker, Christina R.; Checkelsky, Joseph G.

    2018-02-01

    The acute sensitivity of the electrical resistance of certain systems to magnetic fields known as extreme magnetoresistance (XMR) has recently been explored in a new materials context with topological semimetals. Exemplified by WTe2 and rare-earth monopnictide La(Sb,Bi), these systems tend to be nonmagnetic, nearly compensated semimetals and represent a platform for large magnetoresistance driven by intrinsic electronic structure. Here we explore electronic transport in magnetic members of the latter family of semimetals and find that XMR is strongly modulated by magnetic order. In particular, CeSb exhibits XMR in excess of 1.6 ×106% at fields of 9 T whereas the magnetoresistance itself is nonmonotonic across the various magnetic phases and shows a transition from negative magnetoresistance to XMR with fields above magnetic ordering temperature TN. The magnitude of the XMR is larger than in other rare-earth monopnictides including the nonmagnetic members and follows a nonsaturating power law to fields above 30 T. We show that the overall response can be understood as the modulation of conductivity by the Ce orbital state and for intermediate temperatures can be characterized by an effective medium model. Comparison to the orbitally quenched compound GdBi supports the correlation of XMR with the onset of magnetic ordering and compensation and highlights the unique combination of orbital inversion and type-I magnetic ordering in CeSb in determining its large response. These findings suggest a paradigm for magneto-orbital control of XMR and are relevant to the understanding of rare-earth-based correlated topological materials.

  16. Asymmetric tunable tunneling magnetoresistance in single-electron transistors

    CERN Document Server

    Pirmann, M; Schön, G

    2000-01-01

    We show that the tunneling magnetoresistance (TMR) of a ferromagnetic single-electron transistor in the sequential tunneling regime shows asymmetric Coulomb blockade oscillations as a function of gate voltage if the individual junction-TMRs differ. The relative amplitude of these oscillations grows significantly if the bias voltage is increased, becoming as large as 30% when the bias voltage is comparable to the charging energy of the single-electron transistor. This might be useful for potential applications requiring a tunable TMR.

  17. Magnetoresistive sensor for real-time single nucleotide polymorphism genotyping

    DEFF Research Database (Denmark)

    Rizzi, Giovanni; Østerberg, Frederik Westergaard; Dufva, Martin

    2014-01-01

    We demonstrate a magnetoresistive sensor platform that allows for the real-time detection of point mutations in DNA targets. Specifically, we detect point mutations at two sites in the human beta globin gene. For DNA detection, the present sensor technology has a detection limit of about 160p...... of magnetic beads, which enables real-time quantification of the specific binding of magnetic beads to the sensor surface under varying experimental conditions....

  18. Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors

    Czech Academy of Sciences Publication Activity Database

    Vašek, Petr; Svoboda, Pavel; Novák, Vít; Cukr, Miroslav; Výborný, Karel; Jurka, Vlastimil; Stuchlík, Jiří; Orlita, Milan; Maude, D. K.

    2010-01-01

    Roč. 23, č. 6 (2010), 1161-1163 ISSN 1557-1939 R&D Projects: GA AV ČR KAN400100652; GA MŠk MEB020928 Grant - others:EU EuroMagNET II(XE) Egide 19535NF Institutional research plan: CEZ:AV0Z10100521 Keywords : GaMnAs * anisotropic magnetoresistance * hydrogenation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.014, year: 2010

  19. Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn

    Czech Academy of Sciences Publication Activity Database

    Galceran, R.; Fina, I.; Cisneros-Fernandez, J.; Bozzo, B.; Frontera, C.; Lopez-Mir, L.; Deniz, H.; Park, K.W.; Park, B.G.; Balcells, J.; Martí, Xavier; Jungwirth, Tomáš; Martínez, B.

    2016-01-01

    Roč. 6, Oct (2016), 1-6, č. článku 35471. ISSN 2045-2322 R&D Projects: GA MŠk LM2015087; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : antiferromagnets * spintronics * magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.259, year: 2016

  20. Magnetoresistance of Si(001) MOSFETs with high concentration of electrons

    Czech Academy of Sciences Publication Activity Database

    Smrčka, Ludvík; Makarovsky, O. N.; Schemenchinskii, S. G.; Vašek, Petr; Jurka, Vlastimil

    2004-01-01

    Roč. 22, - (2004), s. 320-323 ISSN 1386-9477. [International Conference on Electronic Properties of Two-Dimensional Systems /15./. Nara, 14.07.2003-18.07.2003] R&D Projects: GA ČR GA202/01/0754; GA ČR GA202/96/0036 Institutional research plan: CEZ:AV0Z1010914 Keywords : Si MOSFET * magnetoresistance * Hall effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.898, year: 2004

  1. Anisotropic giant magnetoresistance in NbSb2

    Science.gov (United States)

    Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

    2014-12-01

    The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application. We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 105% in 2 K and 9 T field, and 4.3 × 106% in 0.4 K and 32 T field, without saturation) and field-induced metal-semiconductor-like transition, in NbSb2 single crystal. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field which is related to the Dirac-like point, in addition to orbital MR expected for high mobility metals.

  2. Giant magnetoresistance in lateral metallic nanostructures for spintronic applications.

    Science.gov (United States)

    Zahnd, G; Vila, L; Pham, V T; Marty, A; Beigné, C; Vergnaud, C; Attané, J P

    2017-08-25

    In this letter, we discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. Using CoFe-based all-metallic LSVs, we show that giant magnetoresistance variations of more than 10% can be obtained, competitive with the current-perpendicular-to-plane giant magnetoresistance. We then focus on the interest of being able to tailor freely the geometries. On the one hand, by tailoring the non-magnetic parts, we show that it is possible to enhance the spin signal of giant magnetoresistance structures. On the other hand, we show that tailoring the geometry of lateral structures allows creating a multilevel memory with high spin signals, by controlling the coercivity and shape anisotropy of the magnetic parts. Furthermore, we study a new device in which the magnetization direction of a nanodisk can be detected. We thus show that the ability to control the magnetic properties can be used to take advantage of all the spin degrees of freedom, which are usually occulted in current-perpendicular-to-plane devices. This flexibility of lateral structures relatively to current-perpendicular-to-plane structures is thus found to offer a new playground for the development of spintronic applications.

  3. Anisotropic giant magnetoresistance in NbSb2

    Science.gov (United States)

    Wang, Kefeng; Graf, D.; Li, Lijun; Wang, Limin; Petrovic, C.

    2014-01-01

    The magnetic field response of the transport properties of novel materials and then the large magnetoresistance effects are of broad importance in both science and application. We report large transverse magnetoreistance (the magnetoresistant ratio ~ 1.3 × 105% in 2 K and 9 T field, and 4.3 × 106% in 0.4 K and 32 T field, without saturation) and field-induced metal-semiconductor-like transition, in NbSb2 single crystal. Magnetoresistance is significantly suppressed but the metal-semiconductor-like transition persists when the current is along the ac-plane. The sign reversal of the Hall resistivity and Seebeck coefficient in the field, plus the electronic structure reveal the coexistence of a small number of holes with very high mobility and a large number of electrons with low mobility. The large MR is attributed to the change of the Fermi surface induced by the magnetic field which is related to the Dirac-like point, in addition to orbital MR expected for high mobility metals. PMID:25476239

  4. Voltage induced control and magnetoresistance of magnetically frustrated systems

    Science.gov (United States)

    Kalitsov, A.; Chshiev, M.; Canals, B.; Lacroix, C.

    2010-03-01

    The discovery of giant magnetoresistance [1] (GMR) in magnetic nanostructures has generated a new field of spin-based electronics (spintronics) [2]. This advent has considerably increased an interest in related phenomenon in bulk materials, colossal magnetoresistance [3] (CMR), which is several orders higher than GMR, and can be viewed as an ``intrinsic'' property of material. The CMR is typically observed in certain manganite compounds with characteristic magnetic fields of several Tesla. Such fields make them inappropriate for use in spintronic applications where appropriate scale should be about Oersteds. Here we promote magnetically frustrated (MF) bulk materials [4] as a possible alternative for spintronic applications with high magnetoresistance (MR) which can be controlled with relatively small voltages. We demonstrate that MR of MF systems may reach extremely high values and their magnetic configuration may be controlled by applied voltage. The proposed phenomenon is the bulk material analog of spin transfer torque [5] used in spin-valve structures. This work was supported by Nanosciences Foundation (France). [1] M. Baibich et al, Phys. Rev. Lett. 61, 2472 (1988); [2] S. Wolf, Science, 294, 1488 (2001); [3] S. Jin et al, Science, 264, 413 (1994); [4] J. Gardner et al, arXiv:0906.3661; [5] J. Slonczewski, JMMM 159, L1 (1996).

  5. On angular distribution of nucleus fission fragments by fast neutrons

    International Nuclear Information System (INIS)

    Barabanov, A.L.; Grechukhin, D.P.

    1987-01-01

    Evaluation of amplitudes of quadrupole and hexadecapole components of angular distribution of nucleus fission fragments by neutrons with the energies E n < or approx. 6 MeV is conducted. Stability of this amplitude to permeability optical coefficient variations for neutrons is revealed. It is shown, that the ratio of these amplitudes as well as the character of their dependence on the target nucleus orientation degree are sensitive to the type of fission probability distribution along K projection if fissile nucleus J spin to the fragment scattering axis. This sensitivity may be used for fragment angular distribution anisotropy formation statistical model verification

  6. Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor

    Science.gov (United States)

    Ciccarelli, C.; Park, B. G.; Ogawa, S.; Ferguson, A. J.; Wunderlich, J.

    2010-08-01

    We present a study of the magnetoresistance (MR) of a Si metal-oxide-semiconductor field-effect-transistor (MOSFET) at the break-down regime when a magnetic field is applied perpendicular to the plane of the device. We have identified two different regimes where we observe a large and gate-voltage dependent MR. We suggest two different mechanisms which can explain the observed high MR. Moreover, we have studied how the MR of the MOSFET scales with the dimensions of the channel for gate voltages below the threshold. We observed a decrease in the MR by two orders of magnitude by reducing the dimensions of the channel from 50×280 μm2 to 5×5 μm2.

  7. Intrinsic spin-relaxation induced negative tunnel magnetoresistance in a single-molecule magnet

    Science.gov (United States)

    Xie, Haiqing; Wang, Qiang; Xue, Hai-Bin; Jiao, HuJun; Liang, J.-Q.

    2013-06-01

    We investigate theoretically the effects of intrinsic spin-relaxation on the spin-dependent transport through a single-molecule magnet (SMM), which is weakly coupled to ferromagnetic leads. The tunnel magnetoresistance (TMR) is obtained by means of the rate-equation approach including not only the sequential but also the cotunneling processes. It is shown that the TMR is strongly suppressed by the fast spin-relaxation in the sequential region and can vary from a large positive to slight negative value in the cotunneling region. Moreover, with an external magnetic field along the easy-axis of SMM, a large negative TMR is found when the relaxation strength increases. Finally, in the high bias voltage limit the TMR for the negative bias is slightly larger than its characteristic value of the sequential region; however, it can become negative for the positive bias caused by the fast spin-relaxation.

  8. Disorder-dominated linear magnetoresistance in topological insulator Bi2Se3 thin films

    Science.gov (United States)

    Wang, Wen Jie; Gao, Kuang Hong; Li, Qiu Lin; Li, Zhi-Qing

    2017-12-01

    The linear magnetoresistance (MR) effect is an interesting topic due to its potential applications. In topological insulator Bi2Se3, this effect has been reported to be dominated by the carrier mobility (μ) and hence has a classical origin. Here, we study the magnetotransport properties of Bi2Se3 thin films and observe the linear MR effect, which cannot be attributed to the quantum model. Unexpectedly, the linear MR does not show the linear dependence on μ, in conflict with the reported results. However, we find that the observed linear MR is dominated by the inverse disorder parameter 1 /kFl , where kF and l are the Fermi wave vector and the mean free path, respectively. This suggests that its origin is also classical and that no μ-dominated linear MR effect is observed which may be due to the very small μ values in our samples.

  9. Enhanced tunnel magnetoresistance in a spinel oxide barrier with cation-site disorder

    Science.gov (United States)

    Sukegawa, Hiroaki; Miura, Yoshio; Muramoto, Shingo; Mitani, Seiji; Niizeki, Tomohiko; Ohkubo, Tadakatsu; Abe, Kazutaka; Shirai, Masafumi; Inomata, Koichiro; Hono, Kazuhiro

    2012-11-01

    We report enhanced tunnel magnetoresistance (TMR) ratios of 188% (308%) at room temperature and 328% (479%) at 15 K for cation-site-disordered MgAl2O4-barrier magnetic tunnel junctions (MTJs) with Fe (Fe0.5Co0.5 alloy) electrodes, which exceed the TMR ratios theoretically calculated and experimentally observed for ordered spinel barriers. The enhancement of TMR ratios is attributed to the suppression of the so-called band-folding effect in ordered spinel MTJs [Phys. Rev. BPRBMDO1098-012110.1103/PhysRevB.86.024426 86, 024426 (2012)]. First-principles calculations describe a dominant role of the oxygen sublattice for spin-dependent coherent tunneling, suggesting a mechanism of coherent tunneling occurring even in the disordered systems.

  10. Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films

    KAUST Repository

    Mi, W. B.

    2013-06-07

    Polycrystalline ferromagnetic GdN x films were fabricated at different N2 flow rates ( fN2 ) to modify N-vacancy concentration so as to study its influence on electrotransport. Metal-semiconductor transition appears at Curie temperature (TC ) of ∼40 K. Temperature-dependent magnetoresistance (MR) shows a peak at T C. The films at fN2  = 5, 10, 15, and 20 sccm show MR of −38%, −42%, −46%, and −86% at 5 K and 50 kOe, respectively. Above 15 K, MR is from colossal MR and from both colossal and tunneling MR below 15 K. The enhanced MR at fN2  = 20 sccm is attributed to large spin polarization of half-metallicity in GdN x with low N vacancies.

  11. Magnetoresistance oscillations of two-dimensional electron systems in lateral superlattices with structured unit cells

    Science.gov (United States)

    Gerhardts, Rolf R.

    2015-11-01

    Model calculations for commensurability oscillations of the low-field magnetoresistance of two-dimensional electron systems (2DES) in lateral superlattices, consisting of unit cells with an internal structure, are compared with recent experiments. The relevant harmonics of the effective modulation potential depend not only on the geometrical structure of the modulated unit cell, but also strongly on the nature of the modulation. While higher harmonics of an electrostatically generated surface modulation are exponentially damped at the position of the 2DES about 90 nm below the surface, no such damping appears for strain-induced modulation generated, e.g., by the deposition of stripes of calixarene resist on the surface before cooling down the sample.

  12. Optical angular momentum in classical electrodynamics

    Science.gov (United States)

    Mansuripur, Masud

    2017-06-01

    Invoking Maxwell’s classical equations in conjunction with expressions for the electromagnetic (EM) energy, momentum, force, and torque, we use a few simple examples to demonstrate the nature of the EM angular momentum. The energy and the angular momentum of an EM field will be shown to have an intimate relationship; a source radiating EM angular momentum will, of necessity, pick up an equal but opposite amount of mechanical angular momentum; and the spin and orbital angular momenta of the EM field, when absorbed by a small particle, will be seen to elicit different responses from the particle.

  13. Spin and orbital angular momentum distribution functions of the nucleon

    Science.gov (United States)

    Wakamatsu, M.; Watabe, T.

    2000-09-01

    A theoretical prediction is given for the spin and orbital angular momentum distribution functions of the nucleon within the framework of an effective quark model of QCD, i.e., the chiral quark soliton model. An outstanding feature of the model is that it predicts a fairly small quark spin fraction of the nucleon ΔΣ~=0.35, which in turn dictates that the remaining 65% of the nucleon spin is carried by the orbital angular momentum of quarks and antiquarks at the model energy scale of Q2~=0.3 GeV2. This large orbital angular momentum necessarily affects the scenario of scale dependence of the nucleon spin contents in a drastic way.

  14. Angular Spacing Control for Segmented Data Pages in Angle-Multiplexed Holographic Memory

    Science.gov (United States)

    Kinoshita, Nobuhiro; Muroi, Tetsuhiko; Ishii, Norihiko; Kamijo, Koji; Kikuchi, Hiroshi; Shimidzu, Naoki; Ando, Toshio; Masaki, Kazuyoshi; Shimizu, Takehiro

    2011-09-01

    To improve the recording density of angle-multiplexed holographic memory, it is effective to increase the numerical aperture of the lens and to shorten the wavelength of the laser source as well as to increase the multiplexing number. The angular selectivity of a hologram, which determines the multiplexing number, is dependent on the incident angle of not only the reference beam but also the signal beam to the holographic recording medium. The actual signal beam, which is a convergent or divergent beam, is regarded as the sum of plane waves that have different propagation directions, angular selectivities, and optimal angular spacings. In this paper, focusing on the differences in the optimal angular spacing, we proposed a method to control the angular spacing for each segmented data page. We investigated the angular selectivity of a hologram and crosstalk for segmented data pages using numerical simulation. The experimental results showed a practical bit-error rate on the order of 10-3.

  15. Giant magnetoresistance effect in CoZr/Cu/Co spin-valve films (abstract)

    Energy Technology Data Exchange (ETDEWEB)

    Ben-Youssef, J. [CNRS-LMIMS, 92195 Meudon-Bellevue (France)]|[LPM Universite Mohammed V, Rabat (Morocco); Koshkina, O.; Le Gall, H. [CNRS-LMIMS, 92195 Meudon-Bellevue (France); Harfaoui, M.E. [LPMC Universite Ibn Tofail Kenitra (Morocco); Bouziane, K. [CNRS-LMIMS, 92195 Meudon-Bellevue (France); Yamani, M.E. [LPM Universite Mohammed V, Rabat (Morocco); Desvignes, J.M. [CNRS-LMIMS, 92195 Meudon-Bellevue (France)

    1997-04-01

    A high sensitivity of giant magnetoresistance (GMR) has been observed recently from soft magnetic layers such as NiFe, NiFeCo, and FeCoB. Amorphous CoZr alloys present ultrasoft properties compared to NiFe. GMR has been investigated for amorphous CoZr/Cu/Co thin films grown by rf diode sputtering using a target consisting of a Co disk partially covered with a Zr foil. The influence of the argon pressure on Cu layer deposition, Cu thickness, and Zr content on magnetic and transport properties was analyzed. The highest value of transverse GMR obtained along the easy axis is 3.6{percent} and the MR curve was saturated in a magnetic field of 100 Oe at room temperature. GMR shows scaling behavior with the sample composition. Very high sensitivity, around 1{endash}2{percent}/Oe was observed in a CoZr (3 nm)/Cu (3 nm)/Co (2 nm) sandwich. This study shows a large dependence of GMR on Cu thickness and the maximum of magnetoresistance strongly depending on the Ar pressure which modifies the interface roughness. The Zr content also influences the magnetotransport properties ({Delta}R/R and {Delta}R/R{Delta}H). The difference in coercivity between soft magnetic CoZr and hard magnetic Co layers induces antiferromagnetic alignment. Therefore a high MR ratio and field sensitivity are achieved by improving the magnetic properties of the CoZr layer.{copyright} {ital 1997 American Institute of Physics.}

  16. Magnetoresistance in ferromagnetic multilayer with strong interfacial spin-orbit coupling (Conference Presentation)

    Science.gov (United States)

    Kim, Junyeon; Karube, Shutaro; Chen, Yan-Ting; Kondou, Kouta; Tatara, Gen; Otani, YoshiChika

    2016-10-01

    Spin-charge conversion induced by spin-orbit coupling (SOC) is attractive topic for alternative magnetization manipulation and involved various novel phenomena. Particularly Bi-based structure draws interest due to its large Rashba-Edelstein effect (REE) at interface between non-magnetic metal and Bi [1]. A recent report showed that spin-to-charge current conversion becomes more efficient when Bi2O3 is employed on behalf of the Bi [2]. Here we report novel type of magnetoresistance (MR) in Co25Fe75/Cu/Bi2O3 multilayer. This novel MR comes from conversion between spin and charge current at Cu/Bi2O3 interface, and distinctive spin transfer torque dependent on magnetization of the ferromagnetic Co25Fe75 layer. A Co25Fe75 (5)/Cu (0-30)/Bi2O3 (20) (unit:nm) multilayer was deposited with electron beam evaporation on shadow masked Si substrate. Hall bar shaped shadow mask was patterned with photo-lithography method. The MR measurement was performed via 4-point probe method with changing magnitude or angle of external field. Note that external field for angle dependent measurement was 6 T to make sure complete saturation of ferromagnetic layer. We found characteristic resistance drop when the magnetization of ferromagnetic layer is parallel to magnetic direction of spin accumulation, which is similar to spin Hall magnetoresistance (SMR) [3,4]. Further discussion will be given. [1] J. C. Rojas Sanchez et al. Nature Comm. 4, 2944 (2013). [2] S. Karube et al. Appl. Phys. Express. 9, 03301 (2016). [3] H. Nakayama et al. Phys. Rev. Lett. 110, 206601 (2013). [4] J. Kim et al. Phys. Rev. Lett. (in press).

  17. An efficient biosensor made of an electromagnetic trap and a magneto-resistive sensor

    KAUST Repository

    Li, Fuquan

    2014-09-01

    Magneto-resistive biosensors have been found to be useful because of their high sensitivity, low cost, small size, and direct electrical output. They use super-paramagnetic beads to label a biological target and detect it via sensing the stray field. In this paper, we report a new setup for magnetic biosensors, replacing the conventional "sandwich" concept with an electromagnetic trap. We demonstrate the capability of the biosensor in the detection of E. coli. The trap is formed by a current-carrying microwire that attracts the magnetic beads into a sensing space on top of a tunnel magneto-resistive sensor. The sensor signal depends on the number of beads in the sensing space, which depends on the size of the beads. This enables the detection of biological targets, because such targets increase the volume of the beads. Experiments were carried out with a 6. μm wide microwire, which attracted the magnetic beads from a distance of 60. μm, when a current of 30. mA was applied. A sensing space of 30. μm in length and 6. μm in width was defined by the magnetic sensor. The results showed that individual E. coli bacterium inside the sensing space could be detected using super-paramagnetic beads that are 2.8. μm in diameter. The electromagnetic trap setup greatly simplifies the device and reduces the detection process to two steps: (i) mixing the bacteria with magnetic beads and (ii) applying the sample solution to the sensor for measurement, which can be accomplished within about 30. min with a sample volume in the μl range. This setup also ensures that the biosensor can be cleaned easily and re-used immediately. The presented setup is readily integrated on chips via standard microfabrication techniques. © 2014 Elsevier B.V.

  18. Tunnel magnetoresistance in Ni 80Fe 20/Al 2O 3/Co/Al 2O 3/Co junctions

    Science.gov (United States)

    Kubota, H.; Watabe, T.; Miyazaki, T.

    1999-06-01

    Tunnel magnetoresistance (TMR) effect has been investigated in Ni 80Fe 20/Al 2O 3/Co/Al 2O 3/Co double tunnel junctions. The Al 2O 3 layer was formed by a direct sputtering method with an Al 2O 3 target. The dependence of the tunnel resistance and the MR ratio on the thickness of Al 2O 3 and that of the central Co layer were investigated. The relation between the structure of the interface and TMR effect was discussed.

  19. Angular reduction in multiparticle matrix elements

    International Nuclear Information System (INIS)

    Lehman, D.R.; Parke, W.C.

    1989-01-01

    A general method for reduction of coupled spherical harmonic products is presented. When the total angular coupling is zero, the reduction leads to an explicitly real expression in the scalar products of the unit vector arguments of the spherical harmonics. For nonscalar couplings, the reduction gives Cartesian tensor forms for the spherical harmonic products; tensors built from the physical vectors in the original expression. The reduction for arbitrary couplings is given in closed form, making it amenable to symbolic manipulation on a computer. The final expressions do not depend on a special choice of coordinate axes, nor do they contain azimuthal quantum number summations, or do they have complex tensor terms for couplings to a scalar; consequently, they are easily interpretable from the properties of the physical vectors they contain

  20. Metamaterials-based Salisbury screens with reduced angular sensitivity

    Science.gov (United States)

    Wells, Brian M.; Roberts, Christopher M.; Podolskiy, Viktor A.

    2014-10-01

    We demonstrate that the incorporation of nonlocal nanowire metamaterials into Salisbury screens allows for a substantial reduction of the dependence of incident angle on the absorption maximum. Realizations of angle-independent Salisbury screens for the near-IR, mid-IR, and GHz frequencies are proposed and their performances are analyzed analytically and numerically. It is shown that nonlocal effective medium theory adequately describes the angular dependence of nanowire-based Salisbury screens.