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Sample records for angle silicon array

  1. TIARA: a large solid angle silicon array for direct reaction studies with radioactive beams

    CERN Document Server

    Labiche, M; Lemmon, R C; Timis, C N; Orr, N A; Fernandez-Dominguez, B; Chapman, R; Achouri, N L; Amzal, N; Appleton, S; Ashwood, N I; Baldwin, T D; Burns, M; Caballero, L; Cacitti, J; Casadjian, J M; Chartier, M; Curtis, N; Faiz, K; De France, G; Freer, M; Gautier, J M; Gelletly, W; Iltis, G; Lecornu, B; Liang, X; Marry, C; Merrer, Y; Moores, G; Olivier, L; Pain, S D; Pucknell, V F E; Raine, B; Rejmund, M; Rubio, B; Saillant, F; Savajols, H; Sorlin, O; Spohr, K; Theisen, Ch; Voltolini, G; Warner, D D

    2009-01-01

    A compact, quasi-4pi position sensitive silicon array, TIARA, designed to study direct reactions induced by radioactive beams in inverse kinematics is described here. The Transfer and Inelastic All-angle Reaction Array (TIARA) consists of 8 resistive-strip silicon detectors forming an octagonal barrel around the target and a set of double-sided silicon-strip annular detectors positioned at each end of the barrel. The detector was coupled to the gamma-ray array EXOGAM and the spectrometer VAMOS at the GANIL Laboratory to demonstrate the potential of such an apparatus with radioactive beams. The 14N(d,p)15N reaction, well known in normal kinematics, has been carried out in inverse kinematics for that purpose. The observation of the 15N ground state and excited states at 7.16 and 7.86 MeV is presented here as well as the comparison of the measured proton angular distributions with DWBA calculations. Transferred l-values are in very good agreement with both theoretical calculations and previous experimental resul...

  2. Silicon Heat Pipe Array

    Science.gov (United States)

    Yee, Karl Y.; Ganapathi, Gani B.; Sunada, Eric T.; Bae, Youngsam; Miller, Jennifer R.; Beinsford, Daniel F.

    2013-01-01

    Improved methods of heat dissipation are required for modern, high-power density electronic systems. As increased functionality is progressively compacted into decreasing volumes, this need will be exacerbated. High-performance chip power is predicted to increase monotonically and rapidly with time. Systems utilizing these chips are currently reliant upon decades of old cooling technology. Heat pipes offer a solution to this problem. Heat pipes are passive, self-contained, two-phase heat dissipation devices. Heat conducted into the device through a wick structure converts the working fluid into a vapor, which then releases the heat via condensation after being transported away from the heat source. Heat pipes have high thermal conductivities, are inexpensive, and have been utilized in previous space missions. However, the cylindrical geometry of commercial heat pipes is a poor fit to the planar geometries of microelectronic assemblies, the copper that commercial heat pipes are typically constructed of is a poor CTE (coefficient of thermal expansion) match to the semiconductor die utilized in these assemblies, and the functionality and reliability of heat pipes in general is strongly dependent on the orientation of the assembly with respect to the gravity vector. What is needed is a planar, semiconductor-based heat pipe array that can be used for cooling of generic MCM (multichip module) assemblies that can also function in all orientations. Such a structure would not only have applications in the cooling of space electronics, but would have commercial applications as well (e.g. cooling of microprocessors and high-power laser diodes). This technology is an improvement over existing heat pipe designs due to the finer porosity of the wick, which enhances capillary pumping pressure, resulting in greater effective thermal conductivity and performance in any orientation with respect to the gravity vector. In addition, it is constructed of silicon, and thus is better

  3. Silicon Micromachined Microlens Array for THz Antennas

    Science.gov (United States)

    Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

    2013-01-01

    5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a

  4. The high granularity and large solid angle detection array EXPADES

    International Nuclear Information System (INIS)

    Highlights: • We realized a detection array for Exotic Radioactive Ion Beams. • High granularity (32 × 32 pixels 2 × 2 mm wide for 8 telescopes). • High solid angle (8 telescopes 64 × 64 mm wide in a cylindrical configuration covering up to 2.6 sr). • We tested each component of the array by both alpha particles and in-beam environment. • We measured the angular distribution for 17O elastic scattering on a 58Ni target. -- Abstract: The EXPADES (EXotic PArticle DEtection System) detector array consists of 16 Double Side Silicon Strip Detectors (DSSSD) with active areas of 64 × 64 mm2, arranged in 8 ΔE (40/50 μm)–E (300 μm) telescopes. All detector faces are segmented into 32 × 2-mm wide strips, ensuring a 2 × 2 mm2 pixel configuration. Eight ionization chambers can be alternatively used as ΔE stages or, if needed, as an additional third layer for more complex triple telescopes. The signals from silicon ΔE layers and from ionization chambers are read by standard electronics, while innovative 32-channel ASIC chips are employed for the readout of the E stages. The results of off-line tests with alpha sources and from the first in-beam experiment with a 17O beam are presented

  5. Silicon ball grid array chip carrier

    Science.gov (United States)

    Palmer, David W.; Gassman, Richard A.; Chu, Dahwey

    2000-01-01

    A ball-grid-array integrated circuit (IC) chip carrier formed from a silicon substrate is disclosed. The silicon ball-grid-array chip carrier is of particular use with ICs having peripheral bond pads which can be reconfigured to a ball-grid-array. The use of a semiconductor substrate such as silicon for forming the ball-grid-array chip carrier allows the chip carrier to be fabricated on an IC process line with, at least in part, standard IC processes. Additionally, the silicon chip carrier can include components such as transistors, resistors, capacitors, inductors and sensors to form a "smart" chip carrier which can provide added functionality and testability to one or more ICs mounted on the chip carrier. Types of functionality that can be provided on the "smart" chip carrier include boundary-scan cells, built-in test structures, signal conditioning circuitry, power conditioning circuitry, and a reconfiguration capability. The "smart" chip carrier can also be used to form specialized or application-specific ICs (ASICs) from conventional ICs. Types of sensors that can be included on the silicon ball-grid-array chip carrier include temperature sensors, pressure sensors, stress sensors, inertia or acceleration sensors, and/or chemical sensors. These sensors can be fabricated by IC processes and can include microelectromechanical (MEM) devices.

  6. Angle-independent structural colors of silicon

    DEFF Research Database (Denmark)

    Højlund-Nielsen, Emil; Weirich, Johannes; Nørregaard, Jesper;

    2014-01-01

    one-layer surface textures of silicon.We explored four patterns of square structures in a square lattice with periods of 500, 400, 300, and 200 nm. The reflectivity and daylight-colors were measured and compared with simulations based on rigorously coupledwave analysis with excellent agreement. Based...... of silicon-based textures for a wide range of structural parameters....

  7. Integrated Arrays on Silicon at Terahertz Frequencies

    Science.gov (United States)

    Chattopadhayay, Goutam; Lee, Choonsup; Jung, Cecil; Lin, Robert; Peralta, Alessandro; Mehdi, Imran; Llombert, Nuria; Thomas, Bertrand

    2011-01-01

    In this paper we explore various receiver font-end and antenna architecture for use in integrated arrays at terahertz frequencies. Development of wafer-level integrated terahertz receiver front-end by using advanced semiconductor fabrication technologies and use of novel integrated antennas with silicon micromachining are reported. We report novel stacking of micromachined silicon wafers which allows for the 3-dimensional integration of various terahertz receiver components in extremely small packages which easily leads to the development of 2- dimensioanl multi-pixel receiver front-ends in the terahertz frequency range. We also report an integrated micro-lens antenna that goes with the silicon micro-machined front-end. The micro-lens antenna is fed by a waveguide that excites a silicon lens antenna through a leaky-wave or electromagnetic band gap (EBG) resonant cavity. We utilized advanced semiconductor nanofabrication techniques to design, fabricate, and demonstrate a super-compact, low-mass submillimeter-wave heterodyne frontend. When the micro-lens antenna is integrated with the receiver front-end we will be able to assemble integrated heterodyne array receivers for various applications such as multi-pixel high resolution spectrometer and imaging radar at terahertz frequencies.

  8. Silicon microneedles array with biodegradable tips for transdermal drug delivery

    CERN Document Server

    Chen, B; Tay, Francis; Wong, Y T; Iliescu, C

    2008-01-01

    This paper presents the fabrication process, characterization results and basic functionality of silicon microneedles array with biodegradable tips. In order to avoid the main problems related to silicon microneedles : broking of the top part of the needles inside the skin, a simple solution can be fabrication of microneedles array with biodegradable tips. The silicon microneedles array was fabricated by using reactive ion etching while the biodegradable tips were performed using and anodization process that generates selectively porous silicon only on the top part of the skin. The paper presents also the results of in vitro release of calcein using microneedles array with biodegradable tips

  9. Development of silicon-based microelectrode array

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    This paper introduces in details a kind of silicon-based microelectrode array. MEMS (micro-electromechanical system) technology is used in the fabrication of the microelectrode array, which is designed to perform signal recording and electrical stimulation for nerves in neural engineering. A simple fabrication process is developed. An improved model of microelectrodes is brought forward and successfully validated by the excellent match between circuit simulations and electrical measurements, including both magnitude and phase of microelectrode impedance. Compared with the simple one that is usually used, the improved model is believed to be an advance and more accurate. This modeling helps to improve the design of microelectrodes and understand the behavior of interface between electrode and cell. Furthermore, the microelectrode is proved to be a feasible tool for researches in neural engineering by successfully recording neural activities of sciatic nerve of a bullfrog.

  10. MUST: A silicon strip detector array for radioactive beam experiments

    CERN Document Server

    Blumenfeld, Y; Sauvestre, J E; Maréchal, F; Ottini, S; Alamanos, N; Barbier, A; Beaumel, D; Bonnereau, B; Charlet, D; Clavelin, J F; Courtat, P; Delbourgo-Salvador, P; Douet, R; Engrand, M; Ethvignot, T; Gillibert, A; Khan, E; Lapoux, V; Lagoyannis, A; Lavergne, L; Lebon, S; Lelong, P; Lesage, A; Le Ven, V; Lhenry, I; Martin, J M; Musumarra, A; Pita, S; Petizon, L; Pollacco, E; Pouthas, J; Richard, A; Rougier, D; Santonocito, D; Scarpaci, J A; Sida, J L; Soulet, C; Stutzmann, J S; Suomijärvi, T; Szmigiel, M; Volkov, P; Voltolini, G

    1999-01-01

    A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm sup 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and a...

  11. A new architecture for self-organized silicon nanowire growth integrated on a left angle 100 right angle silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Buttard, D. [Universite Joseph Fourier/IUT-1, Grenoble (France); David, T.; Gentile, P. [CEA-Grenoble/SiNaPS-MINATEC, Grenoble (France); Hertog, M. den; Rouviere, J.L. [CEA-Grenoble/LEMMA-MINATEC, Grenoble (France); Baron, T. [CNRS/LTM, Grenoble (France); Ferret, P. [CEA-DRT/CEA-Grenoble/DOPT, Grenoble (France)

    2008-07-15

    A lithography-independent method for achieving self-organized growth of silicon nanowires by means of a Chemical-Vapor-Deposition process is investigated using a nanoporous alumina template on a left angle 100 right angle oriented silicon substrate. The position of the nanowires is determined by the location of gold colloids, acting as catalysts, which are initially deposited at the bottom of the pores over large areas of the sample. The direction of growth is guided by the pore axis, which is perpendicular to the silicon substrate surface. Results from scanning and transmission electron microscopy are presented and discussed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Nanophotonic production, modulation and switching of ions by silicon microcolumn arrays

    Science.gov (United States)

    Vertes, Akos; Walker, Bennett N.

    2013-09-10

    The production and use of silicon microcolumn arrays that harvest light from a laser pulse to produce ions are described. The systems of the present invention seem to behave like a quasi-periodic antenna array with ion yields that show profound dependence on the plane of laser light polarization and the angle of incidence. By providing photonic ion sources, this enables enhanced control of ion production on a micro/nano scale and direct integration with miniaturized analytical devices.

  13. Aluminum-jointed silicon dioxide octagon nanohelix array with desired complex refractive index.

    Science.gov (United States)

    Jen, Yi-Jun; Chen, Chien-Chi; Jheng, Ci-Yao

    2014-06-15

    In this Letter, glancing angle deposition is used to form an aluminum-jointed silicon dioxide octagon nanohelix array as a 3D nanostructured thin film. As a sculptured metal-dielectric composite, the film exhibits a complex refractive index of near unity with a small imaginary part. This structured film is demonstrated as an efficient light absorber to absorb light in a broad band and over a wide range of angles for both polarization states.

  14. Silicon Field Emission Arrays Coated with CNx Thin Films

    Institute of Scientific and Technical Information of China (English)

    Chen Min-gan; Chen Ming-an; Li Jin-chai; Li Jin-chai; Liu Chuan-sheng; Liu Chuan-sheng; Ma You-peng; Ma You-peng; Lu Xian-feng; Lu Xian-feng; Ye Ming-sheng; Ye Ming-sheng

    2003-01-01

    Arrays of silicon micro-tips were made by etching the p-type (1 0 0) silicon wafers which had SiO2 masks with alkaline solution. The density of the micro-tips is 2 ×104 cm-2. The Scanning Electron Microscope (SEM) photos showed that the tips in these arrays are uniform and orderly.The CNx thin film, with the thickness of 1.27μm was deposited on the silicon micro-tip arrays by using the middle frequency magnetron sputtering technology. The SEM photos showed that the films on the tips are smoothly without particles. Keeping the sharpness of the tips will benefit the properties of field emission. The X-ray photoelectron spectrum (XPS) showed that carbon, nitrogen and oxygen are the three major elements in the surfaces of the films. The percents of them are C: 69.5 %, N: 12.6 % and O: 17.9 %. The silicon arrays coated with CNx thin films had shown a good field emission characterization. The emission current intensity reached 3.2 mA/cm2 at 32.8 V/μm, so it can be put into use. The result showed that the silicon arrays coated with CNx thin films are likely to be good field emission cathode.The preparation and the characterization of the samples were discussed in detail.

  15. Silicon Field Emission Arrays Coated with CNx Thin Films

    Institute of Scientific and Technical Information of China (English)

    ChertMing-an; LiJin-chai; LiuChuan-sheng; MaYou-peng; LuXlan-feng; YeMing-sheng

    2003-01-01

    Arrays of silicon micro-tips were made by etching the p-type (1 0 0) silicon wafers which had SiO2 masks with alkaline solution. The density of the micro-tips is 2 ×104 cm-2. The Scanning Electron Microscope (SEM) photos showed that the tips in these arrays are uniform and orderly.The CNx thin film, with the thickness of 1.27μm was deposited on the silicon micro-tip arrays by using the middle frequency magnetron sputtering technology. The SEM photos showed that the films on the tips are smoothly without particles. Keeping the sharpness of the tips will benefit the properties of field emission. The X-ray photoelectron spectrum (XPS) showed that carbon, nitrogen and oxygen are the three major elements in the surfaces of the films. The percents of them are C: 69.5 %, N: 12. 6 % and O: 17.9 %. The silicon arrays coated with CNx thin films had shown a good field emission characterization. The emission current intensity reached 3. 2 mA/cm2 at 32.8 V/μm, so it can be put into use. The result showed that the silicon arrays coated with CNx thin films are likely to be good field emission cathode.The preparation and the characterization of the samples were discussed in detail.

  16. Experimental study on silicon micro-heat pipe arrays

    Energy Technology Data Exchange (ETDEWEB)

    Launay, S.; Sartre, V.; Lallemand, M. [Institut National des Sciences Appliquees, Villeurbanne (France). Centre de Thermique

    2004-02-01

    In this study, micro-heat pipe arrays etched into silicon wafers have been investigated for electronic cooling purposes. Micro-heat pipes of triangular cross-section and with liquid arteries were fabricated by wet anisotropic etching with a KOH solution. The microchannels (230 {mu}m wide) are closed by molecular bonding of a plain wafer with the grooved one. A test bench was developed for the micro-heat pipe filling and the thermal characterisation. The temperature profile on the silicon surface is deduced from experimental measurements. The results show that with the artery micro-heat pipe array, filled with methanol, the effective thermal conductivity of the silicon wafer is significantly improved compared to massive silicon. (author)

  17. Full process for integrating silicon nanowire arrays into solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Perraud, Simon; Poncet, Severine; Noel, Sebastien; Levis, Michel; Faucherand, Pascal; Rouviere, Emmanuelle [CEA, LITEN, Laboratoire des Composants pour la Recuperation d' Energie, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Thony, Philippe; Jaussaud, Claude; Delsol, Regis [CEA, LITEN, Laboratoire des Composants Solaires, INES-RDI, Savoie Technolac, 50 avenue du Lac Leman, 73377 Le-Bourget-du-Lac (France)

    2009-09-15

    A novel process was developed for integrating silicon nanowire arrays into solar cells. n-Type silicon nanowires were grown by chemical-vapour deposition via the gold-catalysed vapour-liquid-solid method, on a p-type silicon substrate. After the growth, the nanowire array was planarized, by embedding the nanowires in a spin-on glass matrix and subsequent chemical-mechanical polishing of the front surface. This planarization step allows to deposit a continuous and uniform conductive film on top of the nanowire array, and thus to form a high-quality front electrical contact. For an illumination intensity of 100 mW/cm{sup 2}, our devices exhibit an energy conversion efficiency of 1.9%. The main performance limiting factor is a high pn junction reverse current, due to contamination by the growth catalyst or to a lack of passivation of surface electronic defects. (author)

  18. ISPA (imaging silicon pixel array) experiment

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    The ISPA tube is a position-sensitive photon detector. It belongs to the family of hybrid photon detectors (HPD), recently developed by CERN and INFN with leading photodetector firms. HPDs confront in a vacuum envelope a photocathode and a silicon detector. This can be a single diode or a pixelized detector. The electrons generated by the photocathode are efficiently detected by the silicon anode by applying a high-voltage difference between them. ISPA tube can be used in high-energy applications as well as bio-medical and imaging applications.

  19. ISPA (imaging silicon pixel array) experiment

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    Application components of ISPA tubes are shown: the CERN-developed anode chip, special windows for gamma and x-ray detection, scintillating crystal and fibre arrays for imaging and tracking of ionizing particles.

  20. ISPA (imaging silicon pixel array) experiment

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    The bump-bonded silicon pixel detector, developed at CERN by the EP-MIC group, is shown here in its ceramic carrier. Both represent the ISPA-tube anode. The chip features between 1024 (called OMEGA-1) and 8196 (ALICE-1) active pixels.

  1. Advance in silicon phased-array receiver IC's

    NARCIS (Netherlands)

    Vliet, F.E. van; Klumperink, E.A.M.; Soer, M.C.M.; Garakoui, S.K.; Boer, A. de; Hek, A.P. de; Heij, W. de; Nauta, B.

    2012-01-01

    Phased-Arrays are increasingly used, and require Silicon implementations to result in affordable multi-beam systems. In this paper, CMOS implementations of two novel analogue beamforming multi-channel receivers will be presented. A narrow-band highly linear system exploiting switches and capacitors

  2. ISPA (imaging silicon pixel array) experiment

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    On the table, under the scrutiny of some collaboration members, an ISPA tube (upper-left of the table) with some of its application components is shown: they consist of the CERN-developed anode chip, special windows for gamma and x-ray detection, scintillating crystal and fibre arrays for imaging and tracking of ionizing particles.

  3. Preparation of electrochemically active silicon nanotubes in highly ordered arrays

    Directory of Open Access Journals (Sweden)

    Tobias Grünzel

    2013-10-01

    Full Text Available Silicon as the negative electrode material of lithium ion batteries has a very large capacity, the exploitation of which is impeded by the volume changes taking place upon electrochemical cycling. A Si electrode displaying a controlled porosity could circumvent the difficulty. In this perspective, we present a preparative method that yields ordered arrays of electrochemically competent silicon nanotubes. The method is based on the atomic layer deposition of silicon dioxide onto the pore walls of an anodic alumina template, followed by a thermal reduction with lithium vapor. This thermal reduction is quantitative, homogeneous over macroscopic samples, and it yields amorphous silicon and lithium oxide, at the exclusion of any lithium silicides. The reaction is characterized by spectroscopic ellipsometry for thin silica films, and by nuclear magnetic resonance and X-ray photoelectron spectroscopy for nanoporous samples. After removal of the lithium oxide byproduct, the silicon nanotubes can be contacted electrically. In a lithium ion electrolyte, they then display the electrochemical waves also observed for other bulk or nanostructured silicon systems. The method established here paves the way for systematic investigations of how the electrochemical properties (capacity, charge/discharge rates, cyclability of nanoporous silicon negative lithium ion battery electrode materials depend on the geometry.

  4. Silicon Array for Multi-particle Emission

    Institute of Scientific and Technical Information of China (English)

    XU; Xin-xing; LIN; Cheng-jian; SUN; Li-jie; BAO; Peng-fei; YANG; Lei; YANG; Feng; ZHANG; Huan-qiao; LIU; Zu-hua; JIA; Hui-ming; MA; Nan-ru

    2013-01-01

    Remarkable progress in the study of two-proton emission has been made in recent years.One of the next destinations is the realization of high-precision direct measurements of decay-energy and emission-angle correlations inβ-delayed two-proton(β2p)emission.We have studiedβ2p correlated emission of the ground state of 26P at the proton drip line with the direct measurement at the National

  5. Photoluminescence Properties of Silicon Nanowires and Carbon Nanotube-Silicon Nanowire Composite Arrays

    Institute of Scientific and Technical Information of China (English)

    李梦轲; 陆梅; 孔令斌; 王成伟; 郭新勇; 力虎林

    2002-01-01

    Composite arrays of multi-wall carbon nanotubes (MWNTs) and silicon nanowires (SiNWs) are fabricated by means of the chemical vapour deposition method in porous anodic aluminium oxide (AAO) templates. The results of the scanning electron microscopy, high-resolution transmission electron microscopy, and transmission electron microscopy have shown that SiNWs are successful nested or filled in the hollow cavities of synthesized MWNT arrays in AAO templates to form MWNT-SiNW composite arrays. The photoluminescence (PL) intensity degradation and a blueshift of PL peak position, usually created from the chemical instability of the SiNW surfaces, are decreased and eliminated clearly in the composite arrays. The composite arrays of MWNTs-SiNWs exhibit more enhanced intensity and stability of PL performance than the SiNW arrays deposited in AAO templates.

  6. New methodology for through silicon via array macroinspection

    Science.gov (United States)

    Fujimori, Yoshihiko; Tsuto, Takashi; Kudo, Yuji; Inoue, Takeshi; Suwa, Kyoichi; Okamoto, Kazuya

    2013-01-01

    A new methodology for inspection of through silicon via (TSV) process wafers is developed by utilizing an optical diffraction signal from the wafers. The optical system uses telecentric illumination and has a two-dimensional sensor for capturing the diffracted light from TSV arrays. The diffraction signal modulates the intensity of the wafer image. The optical configuration is optimized for TSV array inspection. The diffraction signal is sensitive to via-shape variations, and an area of deviation from a nominal via is analyzed using the signal. Using test wafers with deep via patterns on silicon wafers, the performance is evaluated and the sensitivities for various pattern profile changes are confirmed. This new methodology is available for high-volume manufacturing of future TSV three-dimensional complementary metal oxide semiconductor devices.

  7. Amorphous Silicon 16—bit Array Photodetector①

    Institute of Scientific and Technical Information of China (English)

    ZHANGShaoqiang; XUZhongyang; 等

    1997-01-01

    An amorphous silicon 16-bit array photodetector with the a-SiC/a-Si heterojunction diode is presented.The fabrication processes of the device were studied systematically.By the optimum of the diode structure and the preparation procedures,the diode with Id<10-12A/mm2 and photocurrentIp≥0.35A/W has been obtained at the wavelength of 632nm.

  8. Silicon nanoporous pillar array and its surface copper deposition

    Institute of Scientific and Technical Information of China (English)

    FU Xiaonan; CHAI Huadou; LI Xinjian

    2005-01-01

    Silicon nanoporous pillar array (Si-NPA) has been prepared by a hydrothermal etching technique. Using Si-NPA as substrate, a Cu/Si-NPA nanocomposite thin film has been obtained with immersion plating method. Morphological and structural analysis indicates that Si-NPA is a typical structural composite system characterized by a triple hierarchical structure, i. e. the array of micron-sized silicon pillars, the nanopores densely distributed on the surface of the pillars, and the silicon nanocrystallites that constitute the pore walls. Cu/Si-NPA inherits the morphological characteristics of Si-NPA. The compactability of the deposited copper nanoparticles varies alternatively with the local geometrical features of Si-NPA and forms a quasi-periodical pattern. Such an experimental phenomenon is attributed to the velocity dependence of the copper deposition upon the local geometrical features of Si-NPA. These results indicate that Si-NPA might be used as an ideal template for preparing specially patterned, structured or functionalized metal/ silicon nanocomposite systems.

  9. Deployable aerospace PV array based on amorphous silicon alloys

    Science.gov (United States)

    Hanak, Joseph J.; Walter, Lee; Dobias, David; Flaisher, Harvey

    1989-01-01

    The development of the first commercial, ultralight, flexible, deployable, PV array for aerospace applications is discussed. It is based on thin-film, amorphous silicon alloy, multijunction, solar cells deposited on a thin metal or polymer by a proprietary, roll-to-roll process. The array generates over 200 W at AM0 and is made of 20 giant cells, each 54 cm x 29 cm (1566 sq cm in area). Each cell is protected with bypass diodes. Fully encapsulated array blanket and the deployment mechanism weigh about 800 and 500 g, respectively. These data yield power per area ratio of over 60 W/sq m specific power of over 250 W/kg (4 kg/kW) for the blanket and 154 W/kg (6.5 kg/kW) for the power system. When stowed, the array is rolled up to a diameter of 7 cm and a length of 1.11 m. It is deployed quickly to its full area of 2.92 m x 1.11 m, for instant power. Potential applications include power for lightweight space vehicles, high altitude balloons, remotely piloted and tethered vehicles. These developments signal the dawning of a new age of lightweight, deployable, low-cost space arrays in the range from tens to tens of thousands of watts for near-term applications and the feasibility of multi-100 kW to MW arrays for future needs.

  10. Stable divergence angles of a magnetic dipole spiral array

    Energy Technology Data Exchange (ETDEWEB)

    Fan, X.D.; Bursill, L.A.

    1996-03-01

    An analytical model is introduced for Douady and Couder`s [1992] experiment, where phyllotactic patterns appear as a dynamical result of the interaction between magnetic dipoles. The difference equation for the divergence angle (i.e. the angle between successive radial vectors) is obtained by solving the equations of motion with a second nearest neighbour (SNN) approximation. A one dimensional map analysis as well as a comprehensive analytical proof shows that the divergence angle always converges to a single attractor regardless of the initial conditions. This attractor is approximately the Fibonacci angle ({approx} 138 deg) within variations due to a growth factor {mu} of the pattern. The system is proved to be stable with the SNN approximation. Further analysis with a third nearest neighbour approximation (TNN) shows extra linearly stable attractors may appear around the Lucas angle at {approx} 99.5 deg. 7 refs., 5 figs.

  11. Strong-field photoemission from silicon field emitter arrays

    Energy Technology Data Exchange (ETDEWEB)

    Keathley, Phillip D.; Putnam, William P. [Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA (United States); Sell, Alexander; Kaertner, Franz X. [Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA (United States); Center for Free-Electron Laser Science, DESY, Hamburg (Germany); Dept. of Physics, Hamburg Univ. (Germany); Guerrera, Stephen; Velasquez-Garcia, Luis [Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA (United States)

    2013-02-15

    Strong-field photoemission from silicon field emitter arrays is investigated experimentally and results are explained using a ''simple-man'' optical-field emission model. Spectra are collected throughout an in-situ laser annealing process, leading to a red-shift in emitted electron energy along with an increase in electron yield. After the annealing process, a high energy plateau is formed which is explained through optical-field emission along with electron re-scattering with the tip surface. (copyright 2012 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Engineering sidewall angles of silica-on-silicon waveguides

    DEFF Research Database (Denmark)

    Haiyan, Ou

    2004-01-01

    Burned photoresist is used as etch mask when producing silica-onsilicon waveguides. The sidewall angle of the optical glass waveguides is engineered by varying photoresist thickness and etch selectivity. The principle for the formation of the angles is introduced and very promising experimental...

  13. Demonstration of lasercom and spatial tracking with a silicon Geiger-mode APD array

    Science.gov (United States)

    Yarnall, Timothy M.; Horkley, Benjamin W.; Garg, Ajay S.; Hamilton, Scott A.

    2016-03-01

    We present a demonstration of a high-rate photon counting receiver with the potential to act as a spatial tracker based on a silicon Geiger-mode avalanche photodiode array (GM-APD). This array enables sensitive high-rate optical communication in the visible and near infrared regions of the spectrum. The array contains 1024 elements arranged in a 32x32 pixel square. This large number of elements supports high data rates through the mitigation of blocking losses and associated data rate limitations created by the reset time of an individual Geiger-mode detector. Measurement of bit error rates demonstrate that receiver sensitivities of 2.55 dB (detected) photons-per-bit for 78.8 Mb/s on-off-keying and -0.46 dB (detected) photons-per-bit for 19.4 Mb/s 16-ary pulse-position modulation are accessible with strong forward error correction. Additionally, the array can record the spatial coordinates of each detection event. By computing the centroid of the distribution of spatial detections it is possible to determine the angle-of-arrival of the detected photons. These levels of performance imply that Si GM-APD arrays are excellent candidates for a variety of free space lasercom applications ranging from atmospheric communication in the 1 micron or 780 nm spectral windows to underwater communication in the 480 nm to 520 nm spectral window

  14. Composite silicon nanostructure arrays fabricated on optical fibre by chemical etching of multicrystal silicon film

    International Nuclear Information System (INIS)

    Integrating nanostructures onto optical fibers presents a promising strategy for developing new-fashioned devices and extending the scope of nanodevices’ applications. Here we report the first fabrication of a composite silicon nanostructure on an optical fiber. Through direct chemical etching using an H2O2/HF solution, multicrystal silicon films with columnar microstructures are etched into a vertically aligned, inverted-cone-like nanorod array embedded in a nanocone array. A faster dissolution rate of the silicon at the void-rich boundary regions between the columns is found to be responsible for the separation of the columns, and thus the formation of the nanostructure array. The morphology of the nanorods primarily depends on the microstructure of the columns in the film. Through controlling the microstructure of the as-grown film and the etching parameters, the structural control of the nanostructure is promising. This fabrication method can be extended to a larger length scale, and it even allows roll-to-roll processing. (paper)

  15. SILICON NEEDLE ARRAY ON FLEXIBLE SUBSTRATE FOR FLUID TRANSFER

    Institute of Scientific and Technical Information of China (English)

    MA Bin; GAN Zhiyin; LIU Sheng

    2006-01-01

    Transdermal delivery is an attractive alternative, but it is limited by the extremely low permeability of skin. To solve this problem, a novel means-micro needle array based on micro electro-mechanical system (MEMS) technology, is provided to increase permeability of human skin with efficiency, safety and painless delivery. The fabrication method consists of a sequence of deep-reactive ion etching (DRIE), anisotropic wet etching and conformal thin film deposition. The novel technology can enable the realization of micro fabricated micro needle array on a flexible silicon substrate. The micro needle array can be mounted on non-planar surface or even on flexible objects such as a human fingers and arms. The fabricated hollow wall straight micro needles are 200 μm in length, 30 μm inner diameter, and 50 μm outer diameter with 250 μm center-to-center spacing.Flow rate test proves that the polymeric base construction is important to function of micro needles array in package. Glucose solvent tests show that surface tension is the dominant force to affect the characters of flow in micro needles channel.

  16. Silicon nitride Micromesh Bolometer Array for Submillimeter Astrophysics.

    Science.gov (United States)

    Turner, A D; Bock, J J; Beeman, J W; Glenn, J; Hargrave, P C; Hristov, V V; Nguyen, H T; Rahman, F; Sethuraman, S; Woodcraft, A L

    2001-10-01

    We present the design and performance of a feedhorn-coupled bolometer array intended for a sensitive 350-mum photometer camera. Silicon nitride micromesh absorbers minimize the suspended mass and heat capacity of the bolometers. The temperature transducers, neutron-transmutation-doped Ge thermistors, are attached to the absorber with In bump bonds. Vapor-deposited electrical leads address the thermistors and determine the thermal conductance of the bolometers. The bolometer array demonstrates a dark noise-equivalent power of 2.9 x 10(-17) W/ radicalHz and a mean heat capacity of 1.3 pJ/K at 390 mK. We measure the optical efficiency of the bolometer and feedhorn to be 0.45-0.65 by comparing the response to blackbody calibration sources. The bolometer array demonstrates theoretical noise performance arising from the photon and the phonon and Johnson noise, with photon noise dominant under the design background conditions. We measure the ratio of total noise to photon noise to be 1.21 under an absorbed optical power of 2.4 pW. Excess noise is negligible for audio frequencies as low as 30 mHz. We summarize the trade-offs between bare and feedhorn-coupled detectors and discuss the estimated performance limits of micromesh bolometers. The bolometer array demonstrates the sensitivity required for photon noise-limited performance from a spaceborne, passively cooled telescope. PMID:18364768

  17. Measurement of small angle based on a (1 0 0) silicon wafer and heterodyne interferometer

    Science.gov (United States)

    Hsieh, Meng-Chang; Lin, Jiun-You; Chen, Yu-Fong; Chang, Chia-Ou

    2016-06-01

    In this paper, a new optical material application and a heterodyne interferometer are proposed for measuring small angles. In the proposed interferometer, the optical material is a (1 0 0) silicon wafer applied to compose a new architecture of small angle sensor. The small angle measurement used the phase difference which is dependent on the incident angle at the silicon wafer surface to deduce the angular variation. The proposed architecture is simple and uses the common path method to compare test and reference signals; thus, small angles can be easily and accurately measured by estimating the phase difference. The experimental results demonstrate the feasibility of this method. The angular resolution and sensitivity levels superior to 7 × 10-5° (1.3 × 10-6 rad) and 150 (deg/deg), respectively, were attainable in a dynamic range of 0.45°.

  18. Contact Angles and Surface Tension of Germanium-Silicon Melts

    Science.gov (United States)

    Croell, A.; Kaiser, N.; Cobb, S.; Szofran, F. R.; Volz, M.; Rose, M. Franklin (Technical Monitor)

    2001-01-01

    Precise knowledge of material parameters is more and more important for improving crystal growth processes. Two important parameters are the contact (wetting) angle and the surface tension, determining meniscus shapes and surface-tension driven flows in a variety of methods (Czochralski, EFG, floating-zone, detached Bridgman growth). The sessile drop technique allows the measurement of both parameters simultaneously and has been used to measure the contact angles and the surface tension of Ge(1-x)Si(x) (0 less than or equal to x less than or equal to 1.3) alloys on various substrate materials. Fused quartz, Sapphire, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AIN, Si3N4, and polycrystalline CVD diamond were used as substrate materials. In addition, the effect of different cleaning procedures and surface treatments on the wetting behavior were investigated. Measurements were performed both under dynamic vacuum and gas atmospheres (argon or forming gas), with temperatures up to 1100 C. In some experiments, the sample was processed for longer times, up to a week, to investigate any changes of the contact angle and/or surface tension due to slow reactions with the substrate. For pure Ge, stable contact angles were found for carbon-based substrates and for pBN, for Ge(1-x)Si(x) only for pBN. The highest wetting angles were found for pBN substrates with angles around 170deg. For the surface tension of Ge, the most reliable values resulted in gamma(T) = (591- 0.077 (T-T(sub m)) 10(exp -3)N/m. The temperature dependence of the surface tension showed similar values for Ge(1-x)Si(x), around -0.08 x 10(exp -3)N/m K, and a compositional dependence of 2.2 x 10(exp -3)N/m at%Si.

  19. Sensitivity and selectivity of intraneural stimulation using a silicon electrode array

    NARCIS (Netherlands)

    Rutten, Wim L.C.; Wier, van Harmen J.; Put, Johan H.M.

    1991-01-01

    A multielectrode array in silicon technology, as well as experimental paradigms and model calculations for sensitivity and selectivity measures, have been developed. The array consists of twelve platinum electrode sites (10×50 ¿m and 50 ¿m interdistance) on a 45-¿m thick tip-shaped silicon substrate

  20. Smart integration of silicon nanowire arrays in all-silicon thermoelectric micro-nanogenerators

    Science.gov (United States)

    Fonseca, Luis; Santos, Jose-Domingo; Roncaglia, Alberto; Narducci, Dario; Calaza, Carlos; Salleras, Marc; Donmez, Inci; Tarancon, Albert; Morata, Alex; Gadea, Gerard; Belsito, Luca; Zulian, Laura

    2016-08-01

    Micro and nanotechnologies are called to play a key role in the fabrication of small and low cost sensors with excellent performance enabling new continuous monitoring scenarios and distributed intelligence paradigms (Internet of Things, Trillion Sensors). Harvesting devices providing energy autonomy to those large numbers of microsensors will be essential. In those scenarios where waste heat sources are present, thermoelectricity will be the obvious choice. However, miniaturization of state of the art thermoelectric modules is not easy with the current technologies used for their fabrication. Micro and nanotechnologies offer an interesting alternative considering that silicon in nanowire form is a material with a promising thermoelectric figure of merit. This paper presents two approaches for the integration of large numbers of silicon nanowires in a cost-effective and practical way using only micromachining and thin-film processes compatible with silicon technologies. Both approaches lead to automated physical and electrical integration of medium-high density stacked arrays of crystalline or polycrystalline silicon nanowires with arbitrary length (tens to hundreds microns) and diameters below 100 nm.

  1. Polarization rotator of arbitrary angle based on simple slot-array

    Directory of Open Access Journals (Sweden)

    Xiaoming Liu

    2015-12-01

    Full Text Available A novel polarization rotator of arbitrary angle was proposed and realized based on simple slot arrays. To achieve the rotation of an arbitrary angle α, the slots on the first layer have to be at an angle of α to the slots on the second layer. Consequently, 90° rotation can be realized using two perpendicularly oriented slot arrays, which overturns the conventional notion of that perpendicular slot arrays are not possible to pass electromagnetic wave. In addition, such structure provides the same bandwidth comparing to its counterpart utilized for frequency selective surface (FSS. Furthermore, such structure is much easier to be fabricated compared to the substrate integrated waveguide (SIW array. Moreover, low insertion loss can be achieved based on metallic material.

  2. Develop silicone encapsulation systems for terrestrial silicon solar arrays. First quarterly progress report, February 15, 1978--June 30, 1978

    Energy Technology Data Exchange (ETDEWEB)

    1978-07-10

    This study is directed toward the development of a cost effective encapsulation system for photovoltaic modules using silicone based materials. This is a cooperative effort between Dow Corning, the major supplier of silicones and silicone intermediates, and Spectrolab a leading photovoltaic array manufacturer. The total contract effort has been divided into four tasks: technology review, generation of screening concepts, assessment of encapsulation concepts, and evaluation of encapsulation concepts. A review of technology pertinent to the use and weatherability of silicone based materials and a plan for screening encapsulation concepts are presented. The technology review covered: the performance of clear silicones in weathering and stress environments, photovoltaic industry experience with silicone materials used in photovoltaic systems, and silicones used in the protection of electronic devices.

  3. Static and dynamic characterization of robust superhydrophobic surfaces built from nano-flowers on silicon micro-post arrays

    KAUST Repository

    Chen, Longquan

    2010-09-01

    Superhydrophobic nano-flower surfaces were fabricated using MEMS technology and microwave plasma-enhanced chemical vapor deposition (MPCVD) of carbon nanotubes on silicon micro-post array surfaces. The nano-flower structures can be readily formed within 1-2 min on the micro-post arrays with the spacing ranging from 25 to 30 μm. The petals of the nano-flowers consisted of clusters of multi-wall carbon nanotubes. Patterned nano-flower structures were characterized using various microscopy techniques. After MPCVD, the apparent contact angle (160 ± 0.2°), abbreviated as ACA (defined as the measured angle between the apparent solid surface and the tangent to the liquid-fluid interface), of the nano-flower surfaces increased by 139% compared with that of the silicon micro-post arrays. The measured ACA of the nano-flower surface is consistent with the predicted ACA from a modified Cassie-Baxter equation. A high-speed CCD camera was used to study droplet impact dynamics on various micro/nanostructured surfaces. Both static testing (ACA and sliding angle) and droplet impact dynamics demonstrated that, among seven different micro/nanostructured surfaces, the nano-flower surfaces are the most robust superhydrophobic surfaces. © 2010 IOP Publishing Ltd.

  4. Inverted Silicon Nanopencil Array Solar Cells with Enhanced Contact Structures

    Science.gov (United States)

    Liang, Xiaoguang; Shu, Lei; Lin, Hao; Fang, Ming; Zhang, Heng; Dong, Guofa; Yip, SenPo; Xiu, Fei; Ho, Johnny C.

    2016-01-01

    Although three-dimensional nanostructured solar cells have attracted extensive research attention due to their superior broadband and omnidirectional light-harvesting properties, majority of them are still suffered from complicated fabrication processes as well as disappointed photovoltaic performances. Here, we employed our newly-developed, low-cost and simple wet anisotropic etching to fabricate hierarchical silicon nanostructured arrays with different solar cell contact design, followed by systematic investigations of their photovoltaic characteristics. Specifically, nano-arrays with the tapered tips (e.g. inverted nanopencils) are found to enable the more conformal top electrode deposition directly onto the nanostructures for better series and shunt conductance, but its insufficient film coverage at the basal plane would still restrict the charge carrier collection. In contrast, the low-platform contact design facilitates a substantial photovoltaic device performance enhancement of ~24%, as compared to the one of conventional top electrode design, due to the shortened current path and improved lateral conductance for the minimized carrier recombination and series resistance. This enhanced contact structure can not only maintain excellent photon-trapping behaviors of nanostructures, but also help to eliminate adverse impacts of these tapered nano-morphological features on the contact resistance, providing further insight into design consideration in optimizing the contact geometry for high-performance nanostructured photovoltaic devices. PMID:27671709

  5. Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection

    Directory of Open Access Journals (Sweden)

    P. Pignalosa

    2011-09-01

    Full Text Available Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm and wide angle (from normal incidence to 60º antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer.

  6. Wide-viewing-angle three-dimensional display system using HOE lens array

    Science.gov (United States)

    Takahashi, Hideya; Fujinami, Hiromitsu; Yamada, Kenji

    2006-02-01

    Integral imaging has the problem of the limitation of viewing angle. This paper describes a wide-viewing-angle 3D display system using holographic optical element (HOE) lens array. This display system consists of a flat HOE lens array and a projector. However, the axis of each elemental HOE lens is eccentric. Since every axis of the elemental HOE lens is convergent, the flat HOE lens array works as a virtual curved lens array. Thus, this display system has a wide viewing angle. On the other hand, generally, in a integral imaging system each elemental lens has its corresponding area on the display panel. To prevent the image flipping, the elemental image that exceeds the corresponding area is discarded. Therefore, the number of the elemental images is limited and the viewing angle is limited. In the proposed system, since the HOE lens array is flat and the light rays from the projector are parallel, the elemental image does not exceed the corresponding area and the flipped images are not observed. Also, the configuration of this display system is simple. The principle of the proposed system is explained and the experimental result is presented.

  7. Sparse array angle estimation using reduced-dimension ESPRIT-MUSIC in MIMO radar.

    Science.gov (United States)

    Zhang, Chaozhu; Pang, Yucai

    2013-01-01

    Sparse linear arrays provide better performance than the filled linear arrays in terms of angle estimation and resolution with reduced size and low cost. However, they are subject to manifold ambiguity. In this paper, both the transmit array and receive array are sparse linear arrays in the bistatic MIMO radar. Firstly, we present an ESPRIT-MUSIC method in which ESPRIT algorithm is used to obtain ambiguous angle estimates. The disambiguation algorithm uses MUSIC-based procedure to identify the true direction cosine estimate from a set of ambiguous candidate estimates. The paired transmit angle and receive angle can be estimated and the manifold ambiguity can be solved. However, the proposed algorithm has high computational complexity due to the requirement of two-dimension search. Further, the Reduced-Dimension ESPRIT-MUSIC (RD-ESPRIT-MUSIC) is proposed to reduce the complexity of the algorithm. And the RD-ESPRIT-MUSIC only demands one-dimension search. Simulation results demonstrate the effectiveness of the method. PMID:24376387

  8. Comparison of steering angle and bandwidth for various phased array antenna concepts

    Science.gov (United States)

    Bonjour, Romain; Singleton, Matthew; Leuchtmann, Pascal; Leuthold, Juerg

    2016-08-01

    In this paper we compare different integratable ultra-fast tunable true-time delay concepts with respect to their performances in a phased array system. The performances of the schemes are assessed with respect to the supported range, i.e. the range within which beam steering for a given fractional bandwidth can be achieved with a gain flatness better than 3 dB. We also compare the array gain as of function of steering angle and fractional bandwidth.

  9. Fabrication of a 100% fill-factor silicon microlens array

    Institute of Scientific and Technical Information of China (English)

    Yan Jianhua; Ou Wen; Ou Yi

    2012-01-01

    A simple method has been developed for the fabrication of a silicon microlens array with a 100% fill factor and a smooth configuration.The microlens array is fabricated by using the processes of photoresist (SU8-2005) spin coating,thermal reflow,thermal treatment and reactive ion etching (RIE).First,a photoresist microlens array on a single-polished silicon substrate is fabricated by both thermal reflow and thermal treatment technologies.A typical microlens has a square bottom with size of 25 μm,and the distance between every two adjacent microlenses is 5 μm.Secondly,the photoresist microlens array is transferred to the silicon substrate by RIE to fabricate the silicon microlens array.Experimental results reveal that the silicon microlens array could be formed by adjusting the quantities of the reactive ion gases of SF6 and O2 to proper values.In this paper,the quantities of SF6 and 02 are 60 sccm and 50 sccm,respectively,the corresponding etch ratio of the photoresist and the silicon substrate is 1 to1.44.The bottom size and height of a typical silicon microlens are 30.1μm and 3μm,respectively.The focal lengths of the microlenses ranged from 15.4 to 16.6μm.

  10. Performance of silicon pixel detectors at small track incidence angles for the ATLAS Inner Tracker upgrade

    Science.gov (United States)

    Viel, Simon; Banerjee, Swagato; Brandt, Gerhard; Carney, Rebecca; Garcia-Sciveres, Maurice; Hard, Andrew Straiton; Kaplan, Laser Seymour; Kashif, Lashkar; Pranko, Aliaksandr; Rieger, Julia; Wolf, Julian; Wu, Sau Lan; Yang, Hongtao

    2016-09-01

    In order to enable the ATLAS experiment to successfully track charged particles produced in high-energy collisions at the High-Luminosity Large Hadron Collider, the current ATLAS Inner Detector will be replaced by the Inner Tracker (ITk), entirely composed of silicon pixel and strip detectors. An extension of the tracking coverage of the ITk to very forward pseudorapidity values is proposed, using pixel modules placed in a long cylindrical layer around the beam pipe. The measurement of long pixel clusters, detected when charged particles cross the silicon sensor at small incidence angles, has potential to significantly improve the tracking efficiency, fake track rejection, and resolution of the ITk in the very forward region. The performance of state-of-the-art pixel modules at small track incidence angles is studied using test beam data collected at SLAC and CERN.

  11. The Indiana silicon sphere 4{pi} charged-particle detector array

    Energy Technology Data Exchange (ETDEWEB)

    Kwiatkowski, K. [Indiana Univ., Bloomington, IN (United States). Dept. of Chem. and Phys. and IUCF; Bracken, D.S. [Indiana Univ., Bloomington, IN (United States). Dept. of Chem. and Phys. and IUCF; Morley, K.B. [Indiana Univ., Bloomington, IN (United States). Dept. of Chem. and Phys. and IUCF; Brzychczyk, J. [Indiana Univ., Bloomington, IN (United States). Dept. of Chem. and Phys. and IUCF; Renshaw Foxford, E. [Indiana Univ., Bloomington, IN (United States). Dept. of Chem. and Phys. and IUCF; Komisarcik, K. [Indiana Univ., Bloomington, IN (United States). Dept. of Chem. and Phys. and IUCF; Viola, V.E. [Indiana Univ., Bloomington, IN (United States). Dept. of Chem. and Phys. and IUCF; Yoder, N.R. [Indiana Univ., Bloomington, IN (United States). Dept. of Chem. and Phys. and IUCF; Dorsett, J. [Department of Chemistry Technical Services, Indiana University, Bloomington, IN 47405 (United States); Poehlman, J. [Department of Chemistry Technical Services, Indiana University, Bloomington, IN 47405 (United States); Madden, N. [Consultant, Livermore, CA (United States); Ottarson, J. [National Superconducting Cyclotron Laboratory, Michigan State University, East Lansing, MI 48824 (United States)

    1995-06-15

    A low threshold charged particle detector array for the study of fragmentation processes in light-ion-induced reactions has been constructed and successfully implemented at the IUCF and Saturne II accelerators. The array consists of 162-triple-element detector telescopes mounted in a spherical geometry and covering 74% of 4{pi} in solid angle. Telescope elements are composed of (1) an axial-field gas ionization chamber operated with C{sub 3}F{sub 8} gas; (2) a 0.5 mm thick passivated silicon detector, and (3) a 2.8 cm thick CsI(Tl) scintillation crystal with photodiode readout. Discrete element identification is obtained for ejectiles up to Z similar 16 over the dynamic range 0.7{<=}E/A{<=}95 MeV/nucleon. Isotopes are also distinguished for H, He, Li and Be ejectiles with 8< or {approx}E/A< or {approx}95 MeV. Custom-designed electronics are employed for bias supplies and linear signal processing. Data are acquired via a CAMAC/VME/Ethernet system. (orig.).

  12. Incidence angle and spectral effects on vertical junction silicon solar cell capacitance

    OpenAIRE

    SANE, MOUSTAPHA; ŞAHİN, Gökhan; BARRO, Fabé Idrissa; MAIGA, Amadou Seidou

    2014-01-01

    The aim of this work is to present a theoretical study of a vertical junction silicon solar cell under monochromatic illumination. By solving the continuity equation and using a one-dimensional model in frequency modulation, we derive the analytical expressions of both excess minority carrier density and photovoltage. Based on these expressions, the solar cell capacitance was calculated; we then exhibited the effects of both illumination wavelength and incidence angle on the solar cell capaci...

  13. INVESTIGATION ON SILICON SOLAR CELL CAPACITANCE AND ITS DEPENDENCE ON BOTH TEMPERATURE AND INCIDENCE ANGLE

    OpenAIRE

    Moustapha Sané

    2014-01-01

    The aim of this work is to investigate a theoretical study of a vertical junction silicon solar cell capacitance under monochromatic illumination. By solving the continuity equation and using a one dimensional model in frequency modulation, we derive the analytical expressions of both excess minority carrier density and photovoltage. Based on these expressions, the solar cell capacitance was calculated; we then exhibited the effects of both temperature and incidence angle on the solar cell ca...

  14. Fluorinion transfer in silver-assisted chemical etching for silicon nanowires arrays

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Tianyu; Xu, Youlong, E-mail: ylxu@mail.xjtu.edu.cn; Zhang, Zhengwei; Mao, Shengchun

    2015-08-30

    Graphical abstract: - Highlights: • How Ag transfers F{sup −} to the adjacent Si atom was investigated and deduced by DFT at atomic scale. • Three-electrode CV tests proved the transferring function of Ag in the etching reaction. • Uniform SiNWAs were fabricated on unpolished silicon wafers with KOH pretreatment. - Abstract: Uniform silicon nanowires arrays (SiNWAs) were fabricated on unpolished rough silicon wafers through KOH pretreatment followed by silver-assisted chemical etching (SACE). Density functional theory (DFT) calculations were used to investigate the function of silver (Ag) at atomic scale in the etching process. Among three adsorption sites of Ag atom on Si(1 0 0) surface, Ag(T4) above the fourth-layer surface Si atoms could transfer fluorinion (F{sup −}) to adjacent Si successfully due to its stronger electrostatic attraction force between Ag(T4) and F{sup −}, smaller azimuth angle of F−Ag(T4)−Si, shorter bond length of F−Si compared with F−Ag. As F{sup −} was transferred to adjacent Si by Ag(T4) one by one, the Si got away from the wafer in the form of SiF{sub 4} when it bonded with enough F{sup −} while Ag(T4) was still attached onto the Si wafer ready for next transfer. Cyclic voltammetry tests confirmed that Ag can improve the etching rate by transferring F{sup −} to Si.

  15. Controlled Evolution of Silicon Nanocone Arrays Induced by Ar+ Sputtering at Room Temperature

    Institute of Scientific and Technical Information of China (English)

    LI Qin-Tao; LI Zhi-Gang; XIE Qiao-Ling; GONG Jin-Long; ZHU De-Zhang

    2009-01-01

    Controlled evolution of silicon nanocone arrays induced by Ar+ sputtering at room temperature, using the coating carbon as a mask, is demonstrated. The investigation of scanning electron microscopy indicates that the morphology of silicon nanostructures can be controlled by adjusting the thickness of the coating carbon film.Increasing the thickness of the coating carbon film from 50-6Onm, 250-300nm and 750-800nm to 150Onm, the morphologies of silicon nanostructures are transformed from smooth surface ripple, coarse surface ripple and surface ripple with densely distributed nanocones to nanocone arrays with a high density of about 1 × 109-2 × 109 cm-2.

  16. Target Tracking Using SePDAF under Ambiguous Angles for Distributed Array Radar

    Directory of Open Access Journals (Sweden)

    Teng Long

    2016-09-01

    Full Text Available Distributed array radar can improve radar detection capability and measurement accuracy. However, it will suffer cyclic ambiguity in its angle estimates according to the spatial Nyquist sampling theorem since the large sparse array is undersampling. Consequently, the state estimation accuracy and track validity probability degrades when the ambiguous angles are directly used for target tracking. This paper proposes a second probability data association filter (SePDAF-based tracking method for distributed array radar. Firstly, the target motion model and radar measurement model is built. Secondly, the fusion result of each radar’s estimation is employed to the extended Kalman filter (EKF to finish the first filtering. Thirdly, taking this result as prior knowledge, and associating with the array-processed ambiguous angles, the SePDAF is applied to accomplish the second filtering, and then achieving a high accuracy and stable trajectory with relatively low computational complexity. Moreover, the azimuth filtering accuracy will be promoted dramatically and the position filtering accuracy will also improve. Finally, simulations illustrate the effectiveness of the proposed method.

  17. Target Tracking Using SePDAF under Ambiguous Angles for Distributed Array Radar

    Science.gov (United States)

    Long, Teng; Zhang, Honggang; Zeng, Tao; Chen, Xinliang; Liu, Quanhua; Zheng, Le

    2016-01-01

    Distributed array radar can improve radar detection capability and measurement accuracy. However, it will suffer cyclic ambiguity in its angle estimates according to the spatial Nyquist sampling theorem since the large sparse array is undersampling. Consequently, the state estimation accuracy and track validity probability degrades when the ambiguous angles are directly used for target tracking. This paper proposes a second probability data association filter (SePDAF)-based tracking method for distributed array radar. Firstly, the target motion model and radar measurement model is built. Secondly, the fusion result of each radar’s estimation is employed to the extended Kalman filter (EKF) to finish the first filtering. Thirdly, taking this result as prior knowledge, and associating with the array-processed ambiguous angles, the SePDAF is applied to accomplish the second filtering, and then achieving a high accuracy and stable trajectory with relatively low computational complexity. Moreover, the azimuth filtering accuracy will be promoted dramatically and the position filtering accuracy will also improve. Finally, simulations illustrate the effectiveness of the proposed method. PMID:27618058

  18. Synthesize of barium ferrite nanowire array by self-fabricated porous silicon template

    Science.gov (United States)

    Zheng, Hui; Han, Mangui; Deng, Jiangxia; Zheng, Liang; Wu, Jun; Deng, Longjiang; Qin, Huibin

    2014-08-01

    In this work, we synthesize barium ferrite (BaFe12O19) nanowire array in porous silicon template. The porous silicon templates are prepared via gold-assisted chemical etching method. The gold (Au) nanoparticles with mean diameter of 30 nm and distance of 100 nm were ordered on the surface of Si substrate through the Polystyrene (510000)-block-poly (2-vinylpyridine) (31000) (PS510000-b-P2VP31000) diblock copolymer. Porous silicon templates with mean diameter of 500 nm and distance between the pores of 500 nm were fabricated by two etching steps. BaFe12O19 nanowires with mean diameter of 200 nm were synthesized into a porous silicon template by a sol-gel method. Magnetic hysteresis loops show an isotropic feature of the BaFe12O19 nanowires array. The coercivity (Hc) and squareness ratio (Mr/Ms) of nanowire arrays are 2560 Oe and 0.6, respectively.

  19. Silicon Nanoridge Array Waveguides for Nonlinear and Sensing Applications

    CERN Document Server

    Puckett, Matthew W; Vallini, Felipe; Shahin, Shiva; Monifi, Faraz; Barrina, Peter N; Mehravar, Soroush; Kieu, Khanh; Fainman, Yeshaiahu

    2015-01-01

    We fabricate and characterize waveguides composed of closely spaced and longitudinally oriented silicon ridges etched into silicon-on-insulator wafers. Through both guided mode and bulk measurements, we demonstrate that the patterning of silicon waveguides on such a deeply subwavelength scale is desirable for nonlinear and sensing applications alike. The proposed waveguide geometry simultaneously exhibits comparable propagation loss to similar schemes proposed in literature, an enhanced effective third-order nonlinear susceptibility, and high sensitivity to perturbations in its environment.

  20. Field Emission from Amorphous carbon Nitride Films Deposited on silicon Tip Arrays

    Institute of Scientific and Technical Information of China (English)

    李俊杰; 郑伟涛; 孙龙; 卞海蛟; 金曾孙; 赵海峰; 宋航; 孟松鹤; 赫晓东; 韩杰才

    2003-01-01

    Amorphous carbon nitride films (a-CNx) were deposited on silicon tip arrays by rf magnetron sputtering in pure nitrogen atmosphere. The field emission property of carbon nitride films on Si tips was compared with that of carbon nitride on silicon wafer. The results show that field emission property of carbon nitride films deposited on silicon tips can be improved significantly in contrast with that on wafer. It can be explained that field emission is sensitive to the local curvature and geometry, thus silicon tips can effectively promote field emission property of a-CNx films. In addition, the films deposited on silicon tips have a smaller effective work function ( F = 0.024 eV)of electron field emission than that on silicon wafer ( F = 0.060 e V), which indicates a significant enhancement of the ability of electron field emission from a-CNx films.

  1. W-band Phased Array Systems using Silicon Integrated Circuits

    Science.gov (United States)

    Kim, Sang Young

    This thesis presents the silicon-based on-chip W-band phased array systems. An improved quadrature all-pass filter (QAF) and its implementation in 60--80 GHz active phase shifter using 0.13 microm SiGe BiCMOS technology is presented. It is demonstrated that with the inclusion of an Rs/R in the high Q branches of C and L, the sensitivity to the loading capacitance, therefore the I/Q phase and amplitude errors are minimized. This technique is especially suited for wideband millimeter-wave circuits where the loading capacitance (CL) is comparable to the filter capacitance (C). A prototype 60--80 GHz active phased shifter using the improved QAF is demonstrated. The overall chip size is 1.15 x 0.92 mm2 with the power consumption of 108 mW. The measured S11 and S22 are switches is demonstrated. The phase shifter is based on a low-pass pi-network. The chip size is 0.45 x 0.3 mm2 without pads and consumes virtually no power. The measured S11 and S22 is 8 dBm and the simulated IIP3 is > 22 dBm. A low-power 76--84 GHz 4-element phased array receiver using the designed passive phase shifter is presented. The power consumption is minimized by using a single-ended design and alternating the amplifiers and phase shifter cells to result in a low noise figure at a low power consumption. A variable gain amplifier and the 11° phase shifter are used to correct for the rms gain and phase errors at different operating frequencies. The overall chip size is 2.0 x 2.7 mm2 with the current consumption of 18 mA/channel with 1.8 V supply voltage. The measured S11 and S 22 is chip coupling is circuits are designed differentially to result in less sensitivity to packaging effect and high channel-to-channel isolation. The overall chip size is 5.0 x 5.8 mm 2 with the power consumption of 500--600 mA from 2 V supply voltage. The measured S11 and S22 for all 16 phase states is 10 dB for 76.4--90 GHz with the rms gain error of -45 dB. The measured NF is 11.2--13 dB at 77--87 GHz at the maximum

  2. Micro-Textured Black Silicon Wick for Silicon Heat Pipe Array

    Science.gov (United States)

    Yee, Karl Y.; Sunada, Eric T.; Ganapathi, Gani B.; Manohara, Harish; Homyk, Andrew; Prina, Mauro

    2013-01-01

    Planar, semiconductor heat arrays have been previously proposed and developed; however, this design makes use of a novel, microscale black silicon wick structure that provides increased capillary pumping pressure of the internal working fluid, resulting in increased effective thermal conductivity of the device, and also enables operation of the device in any orientation with respect to the gravity vector. In a heat pipe, the efficiency of thermal transfer from the case to the working fluid is directly proportional to the surface area of the wick in contact with the fluid. Also, the primary failure mechanism for heat pipes operating within the temperature range of interest is inadequate capillary pressure for the return of fluid from the condenser to the wick. This is also what makes the operation of heat pipes orientation-sensitive. Thus, the two primary requirements for a good wick design are a large surface area and high capillary pressure. Surface area can be maximized through nanomachined surface roughening. Capillary pressure is largely driven by the working fluid and wick structure. The proposed nanostructure wick has characteristic dimensions on the order of tens of microns, which promotes menisci of very small radii. This results in the possibility of enormous pumping potential due to the inverse proportionality with radius. Wetting, which also enhances capillary pumping, can be maximized through growth of an oxide layer or material deposition (e.g. TiO2) to create a superhydrophilic surface.

  3. Structure and field emission of graphene layers on top of silicon nanowire arrays

    Science.gov (United States)

    Huang, Bohr-Ran; Chan, Hui-Wen; Jou, Shyankay; Chen, Guan-Yu; Kuo, Hsiu-An; Song, Wan-Jhen

    2016-01-01

    Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and Gʹ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

  4. Nanometer scale assessment of mechanical strain induced in silicon by a periodic line array.

    Science.gov (United States)

    Escoubas, S; Gaudeau, G; Ezzaidi, Y; Thomas, O; Morin, P

    2011-10-01

    Measuring stress and strain, induced by nanostructures, at the nanometer scale is still a challenge. In this work, we investigate the strain induced by sub-micrometric periodic line arrays deposited on single crystal (001) Si substrate. We study the influence of the lines width and the spacing between the lines for two sets of samples: a silicon nitride lines array and a poly-silicon line array capped with a Si3N4 stressor layer. The periodic strain field in mono-crystalline silicon is investigated by High Resolution X-ray Diffraction which is very sensitive to local strain (goniometer with a laboratory source. The line arrays induce a periodic strain field in silicon, which gives rise to distinct satellites in reciprocal space. The intensity envelope of these satellites is related to the strain field in one cell. In order to assess this strain field in silicon, mechanical modeling is necessary. Elastic calculations are performed with a Finite Element Modeling (FEM) code in order to extract the displacement field that is used for structure factor calculations within kinematical approximation. The calculated reciprocal space map is compared to the experimental results in order to validate the strain field. We show that for capped poly arrays, the diffracted intensity envelope is influenced by the spacing between the lines. This area is filled with silicon nitride which induces a noticeable change in displacement and strain field. While for bare stressor arrays the nitride line width is responsible of change in displacement field and thus on the RSM intensity envelope.

  5. Chemically bound gold nanoparticle arrays on silicon: assembly, properties and SERS study of protein interactions.

    Science.gov (United States)

    Kaminska, Agnieszka; Inya-Agha, Obianuju; Forster, Robert J; Keyes, Tia E

    2008-07-28

    A highly reproducible and facile method for formation of ordered 2 dimensional arrays of CTAB protected 50 nm gold nanoparticles bonded to silicon wafers is described. The silicon wafers have been chemically modified with long-chain silanes terminated with thiol that penetrate the CTAB bilayer and chemically bind to the underlying gold nanoparticle. The silicon wafer provides a reproducibly smooth, chemically functionalizable and non-fluorescent substrate with a silicon phonon mode which may provide a convenient internal frequency and intensity calibration for vibrational spectroscopy. The CTAB bilayer provides a potentially biomimetic environment for analyte, yet allows a sufficiently small nanoparticle separation to achieve a significant electric field enhancement. The arrays have been characterized using SEM and Raman spectroscopy. These studies reveal that the reproducibility of the arrays is excellent both between batches (effect of temperature on the arrays was also investigated. The interaction of protein and amino acid with the nanoparticle arrays was investigated using Raman microscopy to investigate their potential in bio-SERS spectroscopy. Raman of phenylalanine and the protein bovine pancreatic trypsin inhibitor, BPTI were studied using 785 nm excitation, coincident with the surface plasmon absorbance of the array. The arrays exhibit SERS enhancements of the order of 2.6 x 10(4) for phenylalanine, the standard deviation on the relative intensity of the 1555 cm(-1) mode of phenylalanine is less than 10% for 100 randomly distributed locations across a single substrate and less than 20% between different substrates. Significantly, comparisons of the Raman spectra of the protein and phenylalanine in solution and immobilized on the nanoparticle arrays indicates that the protein is non-randomly orientated on the arrays. Selective SERS enhancements suggest that aromatic residues penetrate through the bilayer inducing conformational changes in the protein. PMID

  6. Periodic nano/micro-hole array silicon solar cell

    OpenAIRE

    Lai, Guan-Yu; Kumar, Dinesh P; Pei, Zingway

    2014-01-01

    In this study, we applied a metal catalyst etching method to fabricate a nano/microhole array on a Si substrate for application in solar cells. In addition, the surface of an undesigned area was etched because of the attachment of metal nanoparticles that is dissociated in a solution. The nano/microhole array exhibited low specular reflectance (

  7. Beam Tilt-Angle Estimation for Monopole End-Fire Array Mounted on a Finite Ground Plane

    OpenAIRE

    Jia Cao; Zhenghui Xue; Meng Cao

    2015-01-01

    A modified method for the beam tilt-angle estimation of monopole end-fire array mounted on finite ground plane is proposed. In the simplified model, the monopole array and ground plane are approximated to two line sources of transverse and longitudinal electric current, respectively. It is deduced that the beam tilt angle is a function about the length of ground plane in front of array Lg, the length of monopole array La, and the phase constant βα. After verifying the optimizing principle of ...

  8. Automatic Release of Silicon Nanowire Arrays with a High Integrity for Flexible Electronic Devices

    OpenAIRE

    Luo Wu; Shuxin Li; Weiwei He; Dayong Teng; Ke Wang; Changhui Ye

    2014-01-01

    Automatic release and vertical transferring of silicon/silicon oxide nanowire arrays with a high integrity are demonstrated by an Ag-assisted ammonia etching method. By adding a water steaming step between Ag-assisted HF/H2O2 and ammonia etching to form a SiOx protective layer sheathing Si nanowires, we can tune the composition of the nanowires from SiOx (0 ≤ x ≤ 2) to Si nanowires. Ag plays a key role to the neat and uniform release of Si/SiOx nanowire arrays from Si wafer in the ammonia etc...

  9. Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications

    Science.gov (United States)

    Zhang, Peng; Liu, Pei; Siontas, Stylianos; Zaslavsky, A.; Pacifici, D.; Ha, Jong-Yoon; Krylyuk, S.; Davydov, A. V.

    2015-03-01

    We report on the fabrication and photovoltaic characteristics of vertical arrays of silicon axial p-i-n junction nanowire (NW) solar cells grown by vapor-liquid-solid (VLS) epitaxy. NW surface passivation with silicon dioxide shell is shown to enhance carrier recombination time, open-circuit voltage (VOC), short-circuit current density (JSC), and fill factor (FF). The photovoltaic performance of passivated individual NW and NW arrays was compared under 532 nm laser illumination with power density of ˜10 W/cm2. Higher values of VOC and FF in the NW arrays are explained by enhanced light trapping. In order to verify the effect of NW density on light absorption and hence on the photovoltaic performance of NW arrays, dense Si NW arrays were fabricated using nanoimprint lithography to periodically arrange the gold seed particles prior to epitaxial growth. Compared to sparse NW arrays fabricated using VLS growth from randomly distributed gold seeds, the nanoimprinted NW array solar cells show a greatly increased peak external quantum efficiency of ˜8% and internal quantum efficiency of ˜90% in the visible spectral range. Three-dimensional finite-difference time-domain simulations of Si NW periodic arrays with varying pitch (P) confirm the importance of high NW density. Specifically, due to diffractive scattering and light trapping, absorption efficiency close to 100% in the 400-650 nm spectral range is calculated for a Si NW array with P = 250 nm, significantly outperforming a blanket Si film of the same thickness.

  10. Laser desorption ionization and peptide sequencing on laser induced silicon microcolumn arrays

    Science.gov (United States)

    Vertes, Akos; Chen, Yong

    2011-12-27

    The present invention provides a method of producing a laser-patterned silicon surface, especially silicon wafers for use in laser desorption ionization (LDI-MS) (including MALDI-MS and SELDI-MS), devices containing the same, and methods of testing samples employing the same. The surface is prepared by subjecting a silicon substrate to multiple laser shots from a high-power picosecond or femtosecond laser while in a processing environment, e.g., underwater, and generates a remarkable homogenous microcolumn array capable of providing an improved substrate for LDI-MS.

  11. Automatic Release of Silicon Nanowire Arrays with a High Integrity for Flexible Electronic Devices

    Science.gov (United States)

    Wu, Luo; Li, Shuxin; He, Weiwei; Teng, Dayong; Wang, Ke; Ye, Changhui

    2014-01-01

    Automatic release and vertical transferring of silicon/silicon oxide nanowire arrays with a high integrity are demonstrated by an Ag-assisted ammonia etching method. By adding a water steaming step between Ag-assisted HF/H2O2 and ammonia etching to form a SiOx protective layer sheathing Si nanowires, we can tune the composition of the nanowires from SiOx (0 ≤ x ≤ 2) to Si nanowires. Ag plays a key role to the neat and uniform release of Si/SiOx nanowire arrays from Si wafer in the ammonia etching process. The vertical Si nanowire array device, with both sides having high-quality Ohmic contact, can be transferred to arbitrary substrates, especially on a flexible substrate. The method developed here offers a facile method to realize flexible Si nanowire array functional devices. PMID:24487460

  12. Highly efficient ultrathin-film amorphous silicon solar cells on top of imprinted periodic nanodot arrays

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Wensheng, E-mail: yws118@gmail.com; Gu, Min, E-mail: mgu@swin.edu.au [Centre for Micro-Photonics, Faculty of Science, Engineering and Technology, Swinburne University of Technology, Hawthorn, Victoria 3122 (Australia); Tao, Zhikuo [College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Ong, Thiam Min Brian [Plasma Sources and Application Center, NIE, Nanyang Technological University, 1 Nanyang Walk, Singapore 637616 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

    2015-03-02

    The addressing of the light absorption and conversion efficiency is critical to the ultrathin-film hydrogenated amorphous silicon (a-Si:H) solar cells. We systematically investigate ultrathin a-Si:H solar cells with a 100 nm absorber on top of imprinted hexagonal nanodot arrays. Experimental evidences are demonstrated for not only notable silver nanodot arrays but also lower-cost ITO and Al:ZnO nanodot arrays. The measured external quantum efficiency is explained by the simulation results. The J{sub sc} values are 12.1, 13.0, and 14.3 mA/cm{sup 2} and efficiencies are 6.6%, 7.5%, and 8.3% for ITO, Al:ZnO, and silver nanodot arrays, respectively. Simulated optical absorption distribution shows high light trapping within amorphous silicon layer.

  13. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution.

    Science.gov (United States)

    Bao, Xiao-Qing; Fatima Cerqueira, M; Alpuim, Pedro; Liu, Lifeng

    2015-07-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction.

  14. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution

    OpenAIRE

    Bao, Xiao-Qing; Cerqueira, M.F.; Alpuim, P.; Liu, Lifeng

    2015-01-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction. L. F. Liu acknowledges the financial support by the FCT Investigator grant (IF/01595/2014).

  15. Silicon nanowire arrays coupled with cobalt phosphide spheres as low-cost photocathodes for efficient solar hydrogen evolution.

    Science.gov (United States)

    Bao, Xiao-Qing; Fatima Cerqueira, M; Alpuim, Pedro; Liu, Lifeng

    2015-07-01

    We demonstrate the first example of silicon nanowire array photocathodes coupled with hollow spheres of the emerging earth-abundant cobalt phosphide catalysts. Compared to bare silicon nanowire arrays, the hybrid electrodes exhibit significantly improved photoelectrochemical performance toward the solar-driven H2 evolution reaction. PMID:26050844

  16. Fabrication of porous silicon by metal-assisted etching using highly ordered gold nanoparticle arrays

    OpenAIRE

    Scheeler, Sebastian P; Ullrich, Simon; Kudera, Stefan; Pacholski, Claudia

    2012-01-01

    A simple method for the fabrication of porous silicon (Si) by metal-assisted etching was developed using gold nanoparticles as catalytic sites. The etching masks were prepared by spin-coating of colloidal gold nanoparticles onto Si. An appropriate functionalization of the gold nanoparticle surface prior to the deposition step enabled the formation of quasi-hexagonally ordered arrays by self-assembly which were translated into an array of pores by subsequent etching in HF solution containing H...

  17. Rice-straw-like structure of silicon nanowire arrays for a hydrogen gas sensor

    International Nuclear Information System (INIS)

    A rice-straw-like silicon nanowire (SiNW) array was developed for hydrogen gas sensing applications. The straight-aligned SiNW array sensor was first fabricated by the metal-assisted electroless etching (MAEE) technique. Rice-straw-like SiNW arrays were formed using a repeated MAEE technique. Hydrogen sensing characteristics were measured for gas concentrations from 20 to 1000 ppm at room temperature. The rice-straw-like SiNW-array-based hydrogen gas sensor performed with low noise and a high response (232.5%) for 1000 ppm hydrogen gas. It was found that the rice-straw-like SiNW-array hydrogen gas sensor had a much better response (approximately 2.5 times) than the straight-aligned SiNW-array sensor. The rice-straw-like SiNW-array structure effectively increased the surface area and the concentration of silicon oxide, which provided additional binding sites for gas molecules. Thus, the rice-straw-like SiNW-array-based hydrogen gas sensor possessed good sensing properties and has the potential for mass production of sensing devices. (paper)

  18. Joint Azimuth and Elevation Angle Estimation Using Incomplete Data Generated by a Faculty Antenna Array

    Directory of Open Access Journals (Sweden)

    Yerriswamy T

    2013-01-01

    Full Text Available In this study, we extend the "Fault Tolerant Matrix Pencil Method for Direction of Arrival Estimation(DOA" proposed by the authors [1] to joint estimation of Azimuth and Elevation Angles from a datagenerated by Uniform Planar Antenna array (UPA, where at random locations a few of the elements dueto failure are missing. Joint Azimuth and Elevation Angles estimation is generally known as TwodimensionalDOA estimation. In the proposed technique, the observed incomplete data is imputed firstusing the Matrix Completion (MC algorithm and later the 2D angles are jointly estimated using the Twodimensional Matrix Pencil Method (2D-MP. The resulting algorithm is robust in terms of failure ofelements, is computationally efficient as it does not forms a correlation matrix and the angles are estimatedusing only a single snapshot. It is shown that the algorithm is able to estimate the DOAs when we have afraction of the observed data. The numerical simulation results are provided to see the performance of themethod for various incomplete data sizes and Signal-to-Noise Ratio (SNR.

  19. Joint Azimuth and Elevation Angle Estimation Using Incomplete Data Generated by a Faculty Antenna Array

    Directory of Open Access Journals (Sweden)

    Yerriswamy T

    2012-12-01

    Full Text Available In this study, we extend the "Fault Tolerant Matrix Pencil Method for Direction of Arrival Estimation (DOA" proposed by the authors [1] to joint estimation of Azimuth and Elevation Angles from a data generated by Uniform Planar Antenna array (UPA, where at random locations a few of the elements due to failure are missing. Joint Azimuth and Elevation Angles estimation is generally known as Twodimensional DOA estimation. In the proposed technique, the observed incomplete data is imputed first using the Matrix Completion (MC algorithm and later the 2D angles are jointly estimated using the Two dimensional Matrix Pencil Method (2D-MP. The resulting algorithm is robust in terms of failure of elements, is computationally efficient as it does not forms a correlation matrix and the angles are estimated using only a single snapshot. It is shown that the algorithm is able to estimate the DOAs when we have a fraction of the observed data. The numerical simulation results are provided to see the performance of the method for various incomplete data sizes and Signal-to-Noise Ratio (SNR.

  20. A Silicon-Germanium Single Chip Receiver for S-band Phased Array Radars

    NARCIS (Netherlands)

    Heij, W. de; Boer, A. de; Hek, A.P. de; Vliet, F.E. van

    2011-01-01

    A Silicon-Germanium single chip receiver has been developed for S-band phased array radars with 2-D digital beamforming. The complete receiver chain from the S-band RF input up to the low-IF output has been integrated on a single SiGe chip. The only external components required to complete the recei

  1. X-ray detection with a linear silicon photo-diode array

    Energy Technology Data Exchange (ETDEWEB)

    Zutavern, F.; Aton, T.; Franck, C; Schnatterly, S.

    1982-01-01

    A phosphor-coated silicon photo-diode array has been used as the detector in an ultra-high vacuum, soft X-ray emission spectrograph. In developing this detection system, measurements on a bare array, a phosphor coated array, and a phosphor coated photo-multiplier tube were made at the Synchrotron Ultraviolet Radiation Facility (SURF), NBS, Washington, D.C. The results of these measurements and the performance of this detection system will be discussed. These results will then be extrapolated into the X-ray energy range used by crystallographers.

  2. Performance of a TiN-coated monolithic silicon pin-diode array under mechanical stress

    CERN Document Server

    VanDevender, B A; Myers, A W; Amsbaugh, J F; Howe, M A; Leber, M L; Robertson, R G H; Tolich, K; Van Wechel, T D; Wall, B L; 10.1016/j.nima.2012.01.033

    2012-01-01

    The Karlsruhe Tritium Neutrino Experiment (KATRIN) will detect tritium beta- decay electrons that pass through its electromagnetic spectrometer with a highly- segmented monolithic silicon pin-diode focal-plane detector (FPD). This pin-diode array will be on a single piece of 500-{\\mu}m-thick silicon, with contact between titanium nitride (TiN) coated detector pixels and front-end electronics made by spring-loaded pogo pins. The pogo pins will exert a total force of up to 50N on the detector, deforming it and resulting in mechanical stress up to 50 MPa in the silicon bulk. We have evaluated a prototype pin-diode array with a pogo-pin connection scheme similar to the KATRIN FPD. We find that pogo pins make good electrical contact to TiN and observe no effects on detector resolution or reverse-bias leakage current which can be attributed to mechanical stress.

  3. Porous silicon nanowire arrays decorated by Ag nanoparticles for surface enhanced Raman scattering study

    Science.gov (United States)

    Su, L.; Xu, H. J.; Chan, Y. F.; Sun, X. M.

    2012-02-01

    A large scale and highly ordered Ag nanoparticle-decorated porous silicon nanowire array was fabricated for a uniform and reproducible surface-enhanced Raman scattering (SERS) substrate. The overall process for the proposed structure is simple and reliable with the use of only chemical etching and metal reduction processes. The SERS sensitivity of the novel substrate as low as 10-16 M for rhodamine 6G (R6G) and the Raman enhancement factor as high as 10^14 were obtained. The excellent SERS performances were mainly attributed to the strong local electromagnetic effect which is associated with the formation of large-quantity Ag nanoparticles on porous silicon nanowire array and the existence of semiconductor silicon nanowires. Significantly, the quadratic relation between the logarithmic concentrations and the logarithmic integrated Raman peak intensities provided quantitative detection of R6G. Our results open new possibilities for applying SERS to trace detection of low-concentration biomolecules.

  4. Ordered arrays of embedded Ga nanoparticles on patterned silicon substrates

    International Nuclear Information System (INIS)

    We fabricate site-controlled, ordered arrays of embedded Ga nanoparticles on Si, using a combination of substrate patterning and molecular-beam epitaxial growth. The fabrication process consists of two steps. Ga droplets are initially nucleated in an ordered array of inverted pyramidal pits, and then partially crystallized by exposure to an As flux, which promotes the formation of a GaAs shell that seals the Ga nanoparticle within two semiconductor layers. The nanoparticle formation process has been investigated through a combination of extensive chemical and structural characterization and theoretical kinetic Monte Carlo simulations. (papers)

  5. Ordered arrays of embedded Ga nanoparticles on patterned silicon substrates.

    Science.gov (United States)

    Bollani, M; Bietti, S; Frigeri, C; Chrastina, D; Reyes, K; Smereka, P; Millunchick, J M; Vanacore, G M; Burghammer, M; Tagliaferri, A; Sanguinetti, S

    2014-05-23

    We fabricate site-controlled, ordered arrays of embedded Ga nanoparticles on Si, using a combination of substrate patterning and molecular-beam epitaxial growth. The fabrication process consists of two steps. Ga droplets are initially nucleated in an ordered array of inverted pyramidal pits, and then partially crystallized by exposure to an As flux, which promotes the formation of a GaAs shell that seals the Ga nanoparticle within two semiconductor layers. The nanoparticle formation process has been investigated through a combination of extensive chemical and structural characterization and theoretical kinetic Monte Carlo simulations. PMID:24784353

  6. Photonic light trapping in silicon nanowire arrays: deriving and overcoming the physical limitations

    CERN Document Server

    Schmitt, Sebastian W

    2016-01-01

    Hexagonally aligned, free-standing silicon nanowire (SiNW) arrays serve as photonic resonators which, as compared to a silicon (Si) thin film, do not only absorb more visible (VIS) and near-infrared (NIR) light, but also show an inherent photonic light concentration that enhances their performance as solar absorbers. Using numerical simulations we show, how light concentration is induced by high optical cross sections of the individual SiNWs but cannot be optimized independently of the SiNW array absorption. While an ideal spatial density exists, for which the SiNW array absorption for VIS and NIR wavelengths reaches a maximum, the spatial correlation of SiNWs in an array suppresses the formation of optical Mie modes responsible for light concentration. We show that different from SiNWs with straight sidewalls, arrays of inverted silicon nanocones (SiNCs) permit to avoid the mode suppression. In fact they give rise to an altered set of photonic modes which is induced by the spatial correlation of SiNCs in the...

  7. Phonon processes in vertically aligned silicon nanowire arrays produced by low-cost all-solution galvanic displacement method

    Science.gov (United States)

    Banerjee, Debika; Trudeau, Charles; Gerlein, Luis Felipe; Cloutier, Sylvain G.

    2016-03-01

    The nanoscale engineering of silicon can significantly change its bulk optoelectronic properties to make it more favorable for device integration. Phonon process engineering is one way to enhance inter-band transitions in silicon's indirect band structure alignment. This paper demonstrates phonon localization at the tip of silicon nanowires fabricated by galvanic displacement using wet electroless chemical etching of a bulk silicon wafer. High-resolution Raman micro-spectroscopy reveals that such arrayed structures of silicon nanowires display phonon localization behaviors, which could help their integration into the future generations of nano-engineered silicon nanowire-based devices such as photodetectors and solar cells.

  8. Gamma-ray imaging detectors based on silicon drift detectors arrays coupled to a single scintillator

    International Nuclear Information System (INIS)

    Arrays of Silicon Drift Detectors (SDDs) coupled to a single scintillator, according to the Anger Camera scheme, can be successfully employed in gamma-ray imaging. The low value of output capacitance of a SDD allows to reach a lower electronics noise with respect to conventional silicon photodiodes used in scintillation detection. A small prototype of gamma camera with sub-millimeter resolution has been realized by using a monolithic array of small SDDs (5 mm2 each unit) with on-chip JFET. For the realization of gamma cameras of larger areas based on single units assembled in array, SDDs of 30 mm2 of area with external JFET have been also experimented

  9. Structure-thermal property correlation of aligned silicon dioxide nanorod arrays

    Science.gov (United States)

    Zhu, Jie; Zhu, Yu; Wu, Xuewang; Song, Helun; Zhang, Yaohui; Wang, Xiaojia

    2016-06-01

    Quantitative characterization of thermal properties of nanorod (NR) arrays appears to be challenging due to the complex combination of high volume of air voids, anisotropy, and structural non-uniformity. This work investigates the structure-thermal property correlation of arrays consisting of either vertically aligned or slanted silicon dioxide (SiO2) NRs, fabricated by the dynamic shadowing growth technique. We apply the frequency-dependent time-domain thermoreflectance method to quantify the thermal properties of SiO2 NR arrays that may possess inhomogeneity along the depth direction. The effective thermal conductivities of four SiO2 NR array films and one reference capping layer for the SiO2 NR array are obtained. The impact of the structure on the effective thermal conductivities of the SiO2 NR array is discussed. The lowest effective thermal conductivity among all samples in this work is found to be 0.13 W m-1 K-1 for the slanted NR array. We attribute the reduction in the effective thermal conductivity of the NR array to the discontinuous nature of SiO2 NRs, which reduces the density of the thermal transport channels and thus prevents heat flux from propagating downwards along the through-plane direction. The results from this work facilitate the potential applications of NR-array-based thermal insulators for micro-thermal devices.

  10. Quantitative measurements of C-reactive protein using silicon nanowire arrays

    Directory of Open Access Journals (Sweden)

    Min-Ho Lee

    2008-03-01

    Full Text Available Min-Ho Lee, Kuk-Nyung Lee, Suk-Won Jung, Won-Hyo Kim, Kyu-Sik Shin, Woo-Kyeong SeongKorea Electronics Technology Institute, Gyeonggi, KoreaAbstract: A silicon nanowire-based sensor for biological application showed highly desirable electrical responses to either pH changes or receptor-ligand interactions such as protein disease markers, viruses, and DNA hybridization. Furthermore, because the silicon nanowire can display results in real-time, it may possess superior characteristics for biosensing than those demonstrated in previously studied methods. However, despite its promising potential and advantages, certain process-related limitations of the device, due to its size and material characteristics, need to be addressed. In this article, we suggest possible solutions. We fabricated silicon nanowire using a top-down and low cost micromachining method, and evaluate the sensing of molecules after transfer and surface modifications. Our newly designed method can be used to attach highly ordered nanowires to various substrates, to form a nanowire array device, which needs to follow a series of repetitive steps in conventional fabrication technology based on a vapor-liquid-solid (VLS method. For evaluation, we demonstrated that our newly fabricated silicon nanowire arrays could detect pH changes as well as streptavidin-biotin binding events. As well as the initial proof-of-principle studies, C-reactive protein binding was measured: electrical signals were changed in a linear fashion with the concentration (1 fM to 1 nM in PBS containing 1.37 mM of salts. Finally, to address the effects of Debye length, silicon nanowires coupled with antigen proteins underwent electrical signal changes as the salt concentration changed.Keywords: silicon nanowire array, C-reactive protein, vapor-liquid-solid method

  11. A Measurement of Lorentz Angle and Spatial Resolution of Radiation Hard Silicon Pixel Sensors

    CERN Document Server

    Gorelov, I; Hoeferkamp, M; Seidel, S C; Ciocio, A; Einsweiler, Kevin F; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Marchesini, R; Milgrome, O; Palaio, N; Pengg, F X; Richardson, J; Zizka, G; Ackers, M; Fischer, P; Keil, M; Meuser, S; Stockmanns, T; Treis, J; Wermes, N; Gössling, C; Hügging, F G; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Cervetto, M; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Netchaeva, P; Osculati, B; Parodi, F; Rossi, L; Dao, K; Fasching, D; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J C; Delpierre, P A; Hallewell, G D; Laugier, D; Mouthuy, T; Rozanov, A N; Trouilleau, C; Valin, I; Aleppo, M; Andreazza, A; Caccia, M; Lari, T; Meroni, C; Ragusa, F; Troncon, C; Vegni, G; Rohe, T; Boyd, G; Severini, H; Skubic, P L; Snow, J; Sícho, P; Tomasek, L; Vrba, V; Holder, M; Lipka, D; Ziolkowski, M; Cauz, D; D'Auria, S; del Papa, C; Grassman, H; Santi, L; Becks, K H; Gerlach, P; Grah, C; Gregor, I; Harenberg, T; Linder, C

    2002-01-01

    Silicon pixel sensors developed by the ATLAS collaboration to meet LHC requirements and to withstand hadronic irradiation to fluences of up to $10^{15} n_eq/cm^{2}$ have been evaluated using a test beam facility at CERN providing a magnetic field. The Lorentz angle was measured and found to alter from 9.0 deg. before irradiation, when the detectors operated at 150 V bias at B=1.48 T, to 3.1 deg after irradiation and operating at 600 V bias at 1.01 T. In addition to the effect due to magnetic field variation, this change is explained by the variation of the electric field inside the detectors arising from the different bias conditions. The depletion depths of irradiated sensors at various bias voltages were also measured. At 600 V bias 280 micron thick sensors depleted to ~200 micron after irradiation at the design fluence of 1 10^{15} 1 MeV n_eq/cm2 and were almost fully depleted at a fluence of 0.5 * 10^{15} 1 MeV n_eq/cm2. The spatial resolution was measured for angles of incidence between 0 deg and 30 deg....

  12. Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Peng; Liu, Pei; Siontas, Stylianos; Zaslavsky, A.; Pacifici, D. [Department of Physics and School of Engineering, Brown University, Providence, Rhode Island 02912 (United States); Ha, Jong-Yoon; Krylyuk, S. [Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States); Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); Davydov, A. V. [Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)

    2015-03-28

    We report on the fabrication and photovoltaic characteristics of vertical arrays of silicon axial p-i-n junction nanowire (NW) solar cells grown by vapor-liquid-solid (VLS) epitaxy. NW surface passivation with silicon dioxide shell is shown to enhance carrier recombination time, open-circuit voltage (V{sub OC}), short-circuit current density (J{sub SC}), and fill factor (FF). The photovoltaic performance of passivated individual NW and NW arrays was compared under 532 nm laser illumination with power density of ∼10 W/cm{sup 2}. Higher values of V{sub OC} and FF in the NW arrays are explained by enhanced light trapping. In order to verify the effect of NW density on light absorption and hence on the photovoltaic performance of NW arrays, dense Si NW arrays were fabricated using nanoimprint lithography to periodically arrange the gold seed particles prior to epitaxial growth. Compared to sparse NW arrays fabricated using VLS growth from randomly distributed gold seeds, the nanoimprinted NW array solar cells show a greatly increased peak external quantum efficiency of ∼8% and internal quantum efficiency of ∼90% in the visible spectral range. Three-dimensional finite-difference time-domain simulations of Si NW periodic arrays with varying pitch (P) confirm the importance of high NW density. Specifically, due to diffractive scattering and light trapping, absorption efficiency close to 100% in the 400–650 nm spectral range is calculated for a Si NW array with P = 250 nm, significantly outperforming a blanket Si film of the same thickness.

  13. Fabrication and electron field-emission of carbon nanofibers grown on silicon nanoporous pillar array

    International Nuclear Information System (INIS)

    Highlights: ► Carbon nanofibers were grown on silicon nanoporous pillar array by a CVD method.► Low turn-on field, high density and stable FE current were obtained in CNTs/Si-NPA.► Defects in CNTs and Si array substrate contributes the excellent FE property. - Abstract: Random orientation carbon nanofibers (CNFs) were grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition (CVD) method with acetylene (C2H2) as carbon precursor and Ni as the catalyst. The synthesized CNFs were mainly composed of amorphous carbon and disordered graphite layers with a core–shell like structure. And, the tangled CNFs and the regular silicon-pillar array formed a nanometer-micron hierarchy structure. The electron field-emission (FE) property of CNFs/Si-NPA was measured and low turn-on field, high-density and stable FE current, high enhancement factor were obtained. The outstanding FE performance of the CNFs/Si-NPA emitters was attributed to the random orientation and defects of CNFs, the undulate surface of the Si-NPA substrate.

  14. Preparation, structural and electrical properties of zinc oxide grown on silicon nanoporous pillar array

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Polycrystalline thick film of zinc oxide (ZnO) is grown on a unique silicon substrate with a hierarchical structure,silicon nanoporous pillar array (Si-NPA), by using a vapour phase transport method. It is found that as-grown ZnO film is composed of closely packed ZnO crystallites with an average size of ~10 μm. The film resistivity of ZnO/Siheterostructure is measured. Theoretical analysis shows that the carrier transport across ZnO/Si-NPA heterojunction is dominated by two mechanisms, i.e. a thermionic process at high voltages and a quantum tunnelling process at low voltages.

  15. Improved surface-enhanced Raman scattering of patterned gold nanoparticles deposited on silicon nanoporous pillar arrays

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Weifen, E-mail: gingerwfj@yahoo.com.cn [Department of Mathematics and Information Science, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Li Xingfu; Cai Hongtao [Department of Mathematics and Information Science, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Li Xinjian [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2011-07-01

    Large-area silicon nanoporous pillar arrays (Si-NPA) uniformly coated with gold nanoparticles was synthesized, and surface-enhanced Raman scattering of rhodamine 6G adsorbed on these gold nanoparticles were studied and compared. It's found that Au/Si-NPA substrate has a significantly high Raman signal sensitivity and good homogeneity. These are attributed to gold nanoparticles with narrow particle-size distribution uniformly coated on the surface and to the enlarged specific surface area for adsorption of target molecules brought by the porous silicon pillars.

  16. Integrated optical dual-cantilever arrays in silica on silicon.

    Science.gov (United States)

    Cooper, Peter A; Carpenter, Lewis G; Mennea, Paolo L; Holmes, Christopher; Gates, James C; Smith, Peter G R

    2014-12-29

    A dual cantilever device has been demonstrated which can operate as a force sensor or variable attenuator. The device is fabricated using physical micromachining techniques that do not require cleanroom class facilities. The response of the device to mechanical actuation is measured, and shown to be well described by conventional fiber optic angular misalignment theory. The device has the potential to be utilized within integrated optical components for sensors or attenuators. An array of devices was fabricated with potential for parallel operation. PMID:25607148

  17. Flow visualization of film cooling with spanwise injection from a small array of holes and compound-angle injection from a large array

    Science.gov (United States)

    Russell, L. M.

    1978-01-01

    Film injection from discrete holes in a smooth, flat plate was studied for two configurations: (1) spanwise injection through a four hole staggered array; and (2) compound angle injection through a 49 hole staggered array. The ratio of boundary layer thicknesses to hole diameter and the Reynolds number were typical of gas turbine film cooling applications. Streaklines showing the motion of the injected air were obtained by photographing small, neutrally buoyant, helium-filled soap bubbles that followed the flow field.

  18. Controlled growth of standing Ag nanorod arrays on bare Si substrate using glancing angle deposition for self-cleaning applications

    Science.gov (United States)

    Singh, Dhruv P.; Singh, J. P.

    2014-03-01

    A facile approach to manipulate the hydrophobicity of surface by controlled growth of standing Ag nanorod arrays is presented. Instead of following the complicated conventional method of the template-assisted growth, the morphology or particularly average diameter and number density (nanorods cm-2) of nanorods were controlled on bare Si substrate by simply varying the deposition rate during glancing angle deposition. The contact angle measurements showed that the evolution of Ag nanorods reduces the surface energy and makes an increment in the apparent water contact angle compared to the plain Ag thin film. The contact angle was found to increase for the Ag nanorod samples grown at lower deposition rates. Interestingly, the morphology of the nanorod arrays grown at very low deposition rate (1.2 Å sec-1) results in a self-cleaning superhydrophobic surface of contact angle about 157° and a small roll-off angle about 5°. The observed improvement in hydrophobicity with change in the morphology of nanorod arrays is explained as the effect of reduction in solid fraction within the framework of Cassie-Baxter model. These self-cleaning Ag nanorod arrays could have a significant impact in wide range of applications such as anti-icing coatings, sensors and solar panels.

  19. Enhanced field emission from a nest array of multi-walled carbon nanotubes grown on a silicon nanoporous pillar array

    Energy Technology Data Exchange (ETDEWEB)

    Li Xinjian; Jiang Weifen [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2007-02-14

    A large scale nest array of multi-walled carbon nanotubes (NACNT) was grown on a silicon nanoporous pillar array (Si-NPA) by thermal chemical vapour deposition. Field emission measurements showed that a current density of 6.8 mA cm{sup -2} was obtained at an electric field of 3.1 V {mu}m{sup -1}, with a turn-on field of 0.56 V {mu}m{sup -1}. The enhancement factor calculated according to the Fowler-Nordheim theory was {approx}25 000. This excellent field emission performance was attributed to the unique structure and morphology of NACNT/Si-NPA, especially the formation of NACNT, and the presence of numerous iron particles encapsulated in the CNTs. These results indicated that NACNT/Si-NPA might be an ideal candidate cathode for potential applications in flat panel displays.

  20. Enhanced field emission from a nest array of multi-walled carbon nanotubes grown on a silicon nanoporous pillar array

    Science.gov (United States)

    Li, Xin Jian; Jiang, Wei Fen

    2007-02-01

    A large scale nest array of multi-walled carbon nanotubes (NACNT) was grown on a silicon nanoporous pillar array (Si-NPA) by thermal chemical vapour deposition. Field emission measurements showed that a current density of 6.8 mA cm-2 was obtained at an electric field of 3.1 V µm-1, with a turn-on field of 0.56 V µm-1. The enhancement factor calculated according to the Fowler-Nordheim theory was ~25 000. This excellent field emission performance was attributed to the unique structure and morphology of NACNT/Si-NPA, especially the formation of NACNT, and the presence of numerous iron particles encapsulated in the CNTs. These results indicated that NACNT/Si-NPA might be an ideal candidate cathode for potential applications in flat panel displays.

  1. A new angle for probing field-aligned irregularities with the Murchison Widefield Array

    CERN Document Server

    Loi, Shyeh Tjing; Cairns, Iver H; Trott, Cathryn M; Hurley-Walker, Natasha; Feng, Lu; Hancock, Paul J; Kaplan, David L

    2016-01-01

    Electron density irregularities in the ionosphere are known to be magnetically anisotropic, preferentially elongated along the lines of force. While many studies of their morphology have been undertaken by topside sounding and whistler measurements, it is only recently that detailed regional-scale reconstructions have become possible, enabled by the advent of widefield radio telescopes. Here we present a new approach for visualising and studying field-aligned irregularities (FAIs), which involves transforming interferometric measurements of TEC gradients onto a magnetic shell tangent plane. This removes the perspective distortion associated with the oblique viewing angle of the irregularities from the ground, facilitating the decomposition of dynamics along and across magnetic field lines. We apply this transformation to the dataset of Loi et al. [2015a], obtained on 15 October 2013 by the Murchison Widefield Array (MWA) radio telescope and displaying prominent FAIs. We study these FAIs in the new reference f...

  2. Joint Angle and Delay Estimation (JADE) in Antenna Array CDMA Systems

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The estimate of signals parameters is very important in wireless communications. In this paper, we combine subspace-based blind channel estimation algorithm with the extension of the JADE-WSF algorithm to jointly estimate the Angles-of-Arrival (AOAs) and delays of multipath signals arriving at an antenna array in Code Division Multiple Access (CDMA) systems. Our approach uses a collection of estimates of a consistent chip-sample of space-time vector channel. The channel estimates are assumed to have constant path AOA and delay over a finite number of symbols. Unlike the traditional MUltiple SIgnal Classification (MUSIC) and Estimation of Signal Parameters via Rotational Invariance Techniques (ESPRIT) algorithms for the estimation of signals parameters, the proposed method can work when the number of paths exceeds the number of antennas. The Cramer-Rao Bound (CRB) and simulations are provided.

  3. Self-Assembled Wire Arrays and ITO Contacts for Silicon Nanowire Solar Cell Applications

    Institute of Scientific and Technical Information of China (English)

    YANG Cheng; ZHANG Gang; LEE Dae-Young; LI Hua-Min; LIM Young-Dae; Y00 Won Jong; PARK Young-Jun; KIM Jong-Min

    2011-01-01

    Self-assembly of silicon nanowire(SiNW)arrays is studied using SF6/02 plasma treatment. The self-assembly method can be applied to single- and poly-crystalline Si substrates. Plasma conditions can control the length and diameter of the SiNW arrays. Lower reflectance of the wire arrays over the wavelength range 200-1100nm is obtained. The conducting transparent indium-tin-oxide(ITO) electrode can be fully coated on the self-assembled SiNW arrays by sputtering. The ITO-coated SiNW solar cells show the same low surface light reflectance and a higher carrier collection efficiency than SiNW solar cells without ITO coating. An efficiency enhancement of around 3 times for ITO coated SiNW solar cells is demonstrated via experiments.

  4. Synthesis, structure and photoelectrochemical properties of single crystalline silicon nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Dalchiele, E.A., E-mail: dalchiel@fing.edu.u [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay); Martin, F.; Leinen, D. [Laboratorio de Materiales y Superficie (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ingenieria Quimica, Universidad de Malaga, Campus de Teatinos s/n, E29071 Malaga (Spain); Marotti, R.E. [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay); Ramos-Barrado, J.R. [Laboratorio de Materiales y Superficie (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ingenieria Quimica, Universidad de Malaga, Campus de Teatinos s/n, E29071 Malaga (Spain)

    2010-01-31

    In the present work, n-type silicon nanowire (n-SiNW) arrays have been synthesized by self-assembly electroless metal deposition (EMD) nanoelectrochemistry. The synthesized n-SiNW arrays have been submitted to scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and optical studies. Initial probes of the solar device conversion properties and the photovoltaic parameters such as short-circuit current, open-circuit potential, and fill factor of the n-SiNW arrays have been explored using a liquid-junction in a photoelectrochemical (PEC) system under white light. Moreover, a direct comparison between the PEC performance of a polished n-Si(100) and the synthesized n-SiNW array photoelectrodes has been done. The PEC performance was significantly enhanced on the n-SiNWs photoelectrodes compared with that on polished n-Si(100).

  5. Corporate array of micromachined dipoles on silicon wafer for 60 GHz communication systems

    KAUST Repository

    Sallam, M. O.

    2013-03-01

    In this paper, an antenna array operating at 60 GHz and realized on 0.675 mm thick silicon substrate is presented. The array is constructed using four micromachined half-wavelength dipoles fed by a corporate feeding network. Isolation between the antenna array and its feeding network is achieved via a ground plane. This arrangement leads to maximizing the broadside radiation with relatively high front-to-back ratio. Simulations have been carried out using both HFSS and CST, which showed very good agreement. Results reveal that the proposed antenna array has good radiation characteristics, where the directivity, gain, and radiation efficiency are around 10.5 dBi, 9.5 dBi, and 79%, respectively. © 2013 IEEE.

  6. Develop silicone encapsulation systems for terrestrial silicon solar arrays. Final report

    Energy Technology Data Exchange (ETDEWEB)

    None

    1979-12-01

    This work resulted in two basic accomplishments. The first was the identification of DOW CORNING Q1-2577 as a suitable encapsulant material for use in cost effective encapsulation systems. The second was the preparation of a silicon-acrylic cover material containing a durable ultraviolet screening agent for the protection of photo-oxidatively sensitive polymers. The most expeditious method of fabrication is one in which the encapsulant material performs the combined function of adhesive, pottant, and outer cover. The costs of the encapsulant can be minimized by using it as a thin conformal coating. One encapsulation system using silicones was identified which provided protection to photovoltaic cells and survived the JPL qualification tests. This encapsulation system uses DOW CORNING Q1-2577, a conformal coating from Dow Corning, as the combined adhesive, pottant and cover material. The lowest cost encapsulation system using Q1-2577 had Super Dorlux as the substrate structural member. The overall material cost of this encapsulation system is 0.74 cents/ft/sup 2/ (1980 dollars) based on current material prices, which could decrease with increased production of Q1-2577. Subsequent to identifying the best silicone encapsulation system, a silicone acrylic cover material containing a durable ultraviolet screening agent was prepared and its effectiveness in protecting photo-oxidatively sensitive polymers was demonstrated.

  7. Silicon crystallization in nanodot arrays organized by block copolymer lithography

    Energy Technology Data Exchange (ETDEWEB)

    Perego, Michele, E-mail: michele.perego@mdm.imm.cnr.it; Andreozzi, Andrea; Seguini, Gabriele [IMM-CNR, Laboratorio MDM (Italy); Schamm-Chardon, Sylvie; Castro, Celia; BenAssayag, Gerard [Université de Toulouse, nMat Group, CEMES-CNRS (France)

    2014-12-15

    Asymmetric polystyrene-b-polymethylmethacrylate (PS-b-PMMA) block copolymers are used to fabricate nanoporous PS templates with different pore diameter depending on the specific substrate neutralization protocol. The resulting polymeric templates are used as masks for the subsequent deposition of a thin (h = 5 nm) amorphous Si layer by electron beam evaporation. After removal of the polymeric film and of the silicon excess, well-defined hexagonally packed amorphous Si nanodots are formed on the substrate. Their average diameter (d < 20 nm), density (1.2 × 10{sup 11} cm{sup −2}), and lateral distribution closely mimic the original nanoporous template. Upon capping with SiO{sub 2} and high temperature annealing (1050 °C, N{sub 2}), each amorphous Si nanodot rearranges in agglomerates of Si nanocrystals (d < 4 nm). The average diameter and shape of these Si nanocrystals strongly depend on the size of the initial Si nanodot.

  8. Application of neural networks to digital pulse shape analysis for an array of silicon strip detectors

    Science.gov (United States)

    Flores, J. L.; Martel, I.; Jiménez, R.; Galán, J.; Salmerón, P.

    2016-09-01

    The new generation of nuclear physics detectors that used to study nuclear reactions is considering the use of digital pulse shape analysis techniques (DPSA) to obtain the (A,Z) values of the reaction products impinging in solid state detectors. This technique can be an important tool for selecting the relevant reaction channels at the HYDE (HYbrid DEtector ball array) silicon array foreseen for the Low Energy Branch of the FAIR facility (Darmstadt, Germany). In this work we study the feasibility of using artificial neural networks (ANNs) for particle identification with silicon detectors. Multilayer Perceptron networks were trained and tested with recent experimental data, showing excellent identification capabilities with signals of several isotopes ranging from 12C up to 84Kr, yielding higher discrimination rates than any other previously reported.

  9. Ordered silicon microwire arrays grown from substrates patterned using imprint lithography and electrodeposition.

    Science.gov (United States)

    Audesirk, Heather A; Warren, Emily L; Ku, Jessie; Lewis, Nathan S

    2015-01-28

    Silicon microwires grown by the vapor-liquid-solid process have attracted a great deal of interest as potential light absorbers for solar energy conversion. However, the research-scale techniques that have been demonstrated to produce ordered arrays of micro and nanowires may not be optimal for use as high-throughput processes needed for large-scale manufacturing. Herein we demonstrate the use of microimprint lithography to fabricate patterned templates for the confinement of an electrodeposited Cu catalyst for the vapor-liquid-solid (VLS) growth of Si microwires. A reusable polydimethylsiloxane stamp was used to pattern holes in silica sol-gels on silicon substrates, and the Cu catalyst was electrodeposited into the holes. Ordered arrays of crystalline p-type Si microwires were grown across the sol-gel-patterned substrates with materials quality and performance comparable to microwires fabricated with high-purity metal catalysts and cleanroom processing.

  10. A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement.

    Science.gov (United States)

    Kim, Jaemin; Son, Donghee; Lee, Mincheol; Song, Changyeong; Song, Jun-Kyul; Koo, Ja Hoon; Lee, Dong Jun; Shim, Hyung Joon; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong

    2016-01-01

    Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates.

  11. Optical absorption enhancement in slanted silicon nanocone hole arrays for solar photovoltaics

    Science.gov (United States)

    Zhang, Shu-Yuan; Liu, Wen; Li, Zhao-Feng; Liu, Min; Liu, Yu-Sheng; Wang, Xiao-Dong; Yang, Fu-Hua

    2016-10-01

    We investigate slanted silicon nanocone hole arrays as light absorbing structures for solar photovoltaics via simulation. With only 1-μm equivalent thickness, a maximum short-circuit current density of 34.9 mA/cm2 is obtained. Moreover, by adding an Ag mirror under the whole structure, a short-circuit current density of 37.9 mA/cm2 is attained. It is understood that the optical absorption enhancement mainly results from three aspects. First, the silicon nanocone holes provide a highly efficient antireflection effect. Second, after breaking the geometric symmetry, the slanted silicon nanocone hole supports more resonant absorption modes than vertical structures. Third, the Fabry-Perot resonance enhances the light absorption after adding an Ag mirror. Project supported by the National Natural Science Foundation of China (Grant Nos. 61274066, 61474115, and 61504138) and the National High Technology Research and Development Program of China (Grant No. 2014AA032602).

  12. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

    KAUST Repository

    Frost, Thomas

    2014-08-13

    A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

  13. Generic technological platform for microfabricating silicon nitride micro- and nanopipette arrays

    OpenAIRE

    Guenat, Olivier T.; Generelli, Silvia; Dadras, Mohammad-Mehdi; Berdondini, L.; De Rooij, Nicolaas F; Koudelka-Hep, Milena

    2007-01-01

    In this paper, the design and the characterization of batch fabricated SixNy micropipette arrays with diameters ranging from 6 µm down to 250 nm are described. The process used to fabricate the micromachined pipettes includes a deep reactive ion etching step, followed by the deposition of two successive layers, a thermal oxide layer and a low stress, low pressure chemical vapor deposited silicon nitride layer, respectively. The diameter of the micropipettes could be modulated simply by choosi...

  14. Microcrystalline silicon: Strain gauge and sensor arrays on flexible substrate for the measurement of high deformations

    OpenAIRE

    Kervran, Y.; De Sagazan, O.; Crand, S.; Coulon, N.; Mohammed-Brahim, T.; Brel, O

    2015-01-01

    This paper presents strain sensor arrays on flexible substrates able to measure local deformation induced by radii of curvature of few millimeters. Sensors use n-type doped microcrystalline silicon (μc-Si) as piezoresistive material, directly deposited on polyimide sheets at 165 °C. Sensitivity of individual sensors was investigated under tensile and compressive bending at various radii of curvature, down to 5 mm. A Transmission Line Method was used to extract the resistivity for each radius....

  15. Development of silicon-germanium visible-near infrared arrays

    Science.gov (United States)

    Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Haldar, Pradeep; Lewis, Jay S.; Dhar, Nibir K.; Wijewarnasuriya, Priyalal; Puri, Yash R.; Sood, Ashok K.

    2016-05-01

    Photodetectors based on germanium which do not require cooling and can provide good near-infrared (NIR) detection performance offer a low-cost alternative to conventional infrared sensors based on material systems such as InGaAs, InSb, and HgCdTe. As a result of the significant difference in thermal expansion coefficients between germanium and silicon, tensile strain incorporated into Ge epitaxial layers deposited on Si utilizing specialized growth processes can extend the operational range of detection to 1600 nm and longer wavelengths. We have fabricated Ge based PIN photodetectors on 300 mm diameter Si wafers to take advantage of high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology. This device fabrication process involves low temperature epitaxial deposition of Ge to form a thin p+ (boron) Ge seed/buffer layer, and subsequent higher temperature deposition of a thicker Ge intrinsic layer. This is followed by selective ion implantation of phosphorus of various concentrations to form n+ Ge regions, deposition of a passivating oxide cap, and then top copper contacts to complete the PIN detector devices. Various techniques including transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have been employed to characterize the material and structural properties of the epitaxially grown layers and fabricated detector devices, and these results are presented. The I-V response of the photodetector devices with and without illumination was also measured, for which the Ge based photodetectors consistently exhibited low dark currents of around ~1 nA at -1 V bias.

  16. Silicon microhole arrays architecture for stable and efficient photoelectrochemical cells using ionic liquids electrolytes

    Science.gov (United States)

    Shen, Xiaojuan; Chen, Ling; Li, Junnan; Zhao, Jie

    2016-06-01

    Silicon microhole arrays (SiMHs) structure is constructed and fabricated by a low-cost maskless anodic etching process, which is applied as the photoanode for the silicon photoelectrochemical (PEC) cells. The depths of silicon microhole arrays can be independently controlled by the etching time. The light-scattering properties are also investigated. Additionally, surface morphology analysis show that large hole diameters of SiMHs is very favourable for the full-filling of ionic liquids electrolyte. Therefore, better electrochemical contact as well as high ionic conductivity of the ionic liquids electrolyte renders the PEC SiMHs solar cells to exhibit more excellent performance. After optimization, the maximum PCE could be achieved at 4.04% for the SiMHs cell. The performance of the SiMHs cell is highly comparable to that of silicon nanowires cell. More importantly, the liquid-state electrolyte is confined in the unique microhole structure, which can obviously prevent the leakage of the ionic liquids electrolyte, resulting in much better long-term stability than the reference devices. These preliminary results validate the concept of interpenetrating networks with semiconductor structure/ILs junction to develop stable and efficient PEC cells.

  17. Nanoscale phosphorous atom arrays created using STM for the fabricaton of a silicon-based quantum computer

    Science.gov (United States)

    O'Brien, J. L.; Schofield, S. R.; Simmons, M. Y.; Clark, Robert G.; Dzurak, Andrew S.; Curson, N. J.; Kane, Bruce E.; McAlpine, N. S.; Hawley, Marilyn E.; Brown, Geoffrey W.

    2001-11-01

    Quantum computers offer the promise of formidable computational power for certain tasks. Of the various possible physical implementations of such a device, silicon based architectures are attractive for their scalability and ease of integration with existing silicon technology. These designs use either the electron or nuclear spin state of single donor atoms to store quantum information. Here we describe a strategy to fabricate an array of single phosphorus atoms in silicon for the construction of such a silicon based quantum computer. We demonstrate the controlled placement of single phosphorus bearing molecules on a silicon surface. This has been achieved by patterning a hydrogen mono-layer resist with a scanning tunneling microscope (STM) tip and exposing the patterned surface to phosphine (PH3) molecules. We also describe preliminary studies into a process to incorporate these surface phosphorus atoms into the silicon crystal at the array sites.

  18. Versatile Particle-Based Route to Engineer Vertically Aligned Silicon Nanowire Arrays and Nanoscale Pores.

    Science.gov (United States)

    Elnathan, Roey; Isa, Lucio; Brodoceanu, Daniel; Nelson, Adrienne; Harding, Frances J; Delalat, Bahman; Kraus, Tobias; Voelcker, Nicolas H

    2015-10-28

    Control over particle self-assembly is a prerequisite for the colloidal templating of lithographical etching masks to define nanostructures. This work integrates and combines for the first time bottom-up and top-down approaches, namely, particle self-assembly at liquid-liquid interfaces and metal-assisted chemical etching, to generate vertically aligned silicon nanowire (VA-SiNW) arrays and, alternatively, arrays of nanoscale pores in a silicon wafer. Of particular importance, and in contrast to current techniques, including conventional colloidal lithography, this approach provides excellent control over the nanowire or pore etching site locations and decouples nanowire or pore diameter and spacing. The spacing between pores or nanowires is tuned by adjusting the specific area of the particles at the liquid-liquid interface before deposition. Hence, the process enables fast and low-cost fabrication of ordered nanostructures in silicon and can be easily scaled up. We demonstrate that the fabricated VA-SiNW arrays can be used as in vitro transfection platforms for transfecting human primary cells.

  19. Fabrication process responsible for fundamentally improving Silicon X-ray microcalorimeter arrays

    Energy Technology Data Exchange (ETDEWEB)

    Brekosky, R.P. E-mail: regis.brekosky@gsfc.nasa.gov; Allen, C.A.; Galeazzi, M.; Gygax, J.D.; Isenburg, H.; Kelley, R.L.; McCammon, D.; McClanahan, R.A.; Porter, F.S.; Stahle, C.K.; Szymkowiak, A.E

    2004-03-11

    We have developed an improved microcalorimeter array that will be used on the AstroE-2 satellite mission. The 6x6 array consists of a grid of 36 suspended pixels. Each 1.5 {mu}m thick pixel has an ion-implanted thermometer, four thermal links (support beams), and four X-ray absorber support tabs. Improvements in Silicon micro-machining capabilities and the availability of custom Silicon-on-Insulator (SOI) wafers has enabled us to precisely control pixel geometry, lead widths, and develop a more compact array. Knowing the silicon thickness, we can calculate a precise implant dose for the thermometer. Using a high-temperature anneal, we can uniformly diffuse the implant throughout the depth of the top layer of the SOI wafer. Defining the length, width, and thickness of the support beams, we can control the thermal conductance of the pixel. Advancements in polymer-photo resists have enabled us to develop a new absorber support tab attachment scheme resulting in more controlled heat dissipation from the absorber to the thermometer on the pixel. An overview of fabrication improvements focusing on these topics will be discussed.

  20. Periodic arrays of deep nanopores made in silicon with reactive ion etching and deep UV lithography

    Energy Technology Data Exchange (ETDEWEB)

    Woldering, Leon A; Tjerkstra, R Willem; Vos, Willem L [Complex Photonic Systems (COPS), MESA Institute for Nanotechnology and Department of Science and Technology, University of Twente, PO Box 217, NL-7500 AE Enschede (Netherlands); Jansen, Henri V [Transducers Science and Technology (TST), MESA Institute for Nanotechnology and Department of Electrical Engineering, Mathematics and Computer Science, University of Twente, PO Box 217, NL-7500 AE Enschede (Netherlands); Setija, Irwan D [ASML Netherlands B V, De Run 6501, NL-5504 DR Veldhoven (Netherlands)], E-mail: l.a.woldering@utwente.nl

    2008-04-09

    We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF{sub 6}, optimized for the formation of deep nanopores. We have realized structures with pitches between 440 and 750 nm, pore diameters between 310 and 515 nm, and depth to diameter aspect ratios up to 16. To the best of our knowledge, this is the highest aspect ratio ever reported for arrays of nanopores in silicon made with a reactive ion etching process. Our experimental results show that the etching rate of the nanopores is aspect-ratio-dependent, and is mostly influenced by the angular distribution of the etching ions. Furthermore we show both experimentally and theoretically that, for sub-micrometer structures, reducing the sidewall erosion is the best way to maximize the aspect ratio of the pores. Our structures have potential applications in chemical sensors, in the control of liquid wetting of surfaces, and as capacitors in high-frequency electronics. We demonstrate by means of optical reflectivity that our high-quality structures are very well suited as photonic crystals. Since the process studied is compatible with existing CMOS semiconductor fabrication, it allows for the incorporation of the etched arrays in silicon chips.

  1. Adjustable fragmentation in laser desorption/ionization from laser-induced silicon microcolumn arrays.

    Science.gov (United States)

    Chen, Yong; Vertes, Akos

    2006-08-15

    Laser-induced silicon microcolumn arrays (LISMA) were developed as matrix-free substrates for soft laser desorption/ionization mass spectrometry (SLDI-MS). When low-resistivity silicon wafers were irradiated in air, sulfur hexafluoride, or water environment with multiple pulses from a 3 x omega mode-locked Nd:YAG laser, columnar structures were formed on the surface. The radii of curvature of the column tips varied with the processing environment, ranging from approximately 120 nm in water, to nitrogen laser, the microcolumn arrays obtained in water environment readily produced molecular ions for peptides and synthetic polymers at low laser fluence. These surfaces demonstrated the best ion yield among the three arrays. The threshold laser fluence and ion yield were comparable to those observed in matrix-assisted laser desorption/ionization. Low-femtomole sensitivity and approximately 6000 Da mass range were achieved. At elevated laser fluence, efficient in-source decay was observed and extensive peptide sequence information was extracted from the resulting mass spectra. The versatility of LISMA was attributed to confinement effects due to the submicrometer morphology and to the surface, thermal, and optical properties of processed silicon. PMID:16906730

  2. Beam Tilt-Angle Estimation for Monopole End-Fire Array Mounted on a Finite Ground Plane

    Directory of Open Access Journals (Sweden)

    Jia Cao

    2015-01-01

    Full Text Available A modified method for the beam tilt-angle estimation of monopole end-fire array mounted on finite ground plane is proposed. In the simplified model, the monopole array and ground plane are approximated to two line sources of transverse and longitudinal electric current, respectively. It is deduced that the beam tilt angle is a function about the length of ground plane in front of array Lg, the length of monopole array La, and the phase constant βα. After verifying the optimizing principle of monopole end-fire array, a 10-element monopole Yagi-Uda antenna satisfying Hansen-Woodyard condition is designed and measured for the analysis. By comparison and analysis, the value of βα is demonstrated to be the key point of the proposed method. And a slow wave monopole array is proved to be able to achieve a low beam tilt angle from end-fire with only a short-length ground plane.

  3. Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications

    Directory of Open Access Journals (Sweden)

    R. W. Wu

    2016-02-01

    Full Text Available Silicon microwires with lateral dimension from 5 μm to 20 μm and depth as long as 20 μm are prepared by bilayer metal assisted chemical etching (MaCE. A bilayer metal configuration (Metal 1 / Metal 2 was applied to assist etching of Si where metal 1 acts as direct catalyst and metal 2 provides mechanical support. Different metal types were investigated to figure out the influence of metal catalyst on morphology of etched silicon. We find that silicon microwires with vertical side wall are produced when we use Ag/Au bilayer, while cone–like and porous microwires formed when Pt/Au is applied. The different micro-/nano-structures in as-etched silicon are demonstrated to be due to the discrepancy of work function of metal catalyst relative to Si. Further, we constructed a silicon microwire arrays solar cells in a radial p–n junction configurations in a screen printed aluminum paste p–doping process.

  4. Hypersonic phononic stopbands at small angles of wave incidence in porous silicon multilayers

    Science.gov (United States)

    Aliev, Gazi N.; Goller, Bernhard

    2015-08-01

    We report theoretical simulation and experimental observation of the mode conversion effect in a hypersonic distributed Bragg reflector of porous silicon. Acoustic transmission of longitudinal waves through the multilayered structure has been measured in the frequency range 0-3 GHz. It is found that the measured transmittance at the gap frequencies is always higher than that theoretically predicted for normal incidence. We attribute this to non-perpendicular wave propagation that was not deliberately sought, which subsequently increases the center gap transmittance due to the mode conversion effect. Oblique incidence with angles of about 1° results in truncated gap depth in acoustic transmission spectra from about  -80 dB, and deeper, to about  -40 dB and shallower. The spectra were simulated by employing the stiffness matrix method. Porosity-dependent acoustic viscous damping was included in the calculations. A way to optimize reflectors in the frequency range, where the forbidden gaps for longitudinal and shear waves overlap, is discussed.

  5. Topological investigation of electronic silicon nanoparticulate aggregates using ultra-small-angle X-ray scattering

    International Nuclear Information System (INIS)

    The network topology of two types of silicon nanoparticles, produced by high energy milling and pyrolysis of silane, in layers deposited from inks on permeable and impermeable substrates has been quantitatively characterized using ultra-small-angle X-ray scattering, supported by scanning electron microscopy observations. The milled particles with a highly polydisperse size distribution form agglomerates, which in turn cluster to form larger aggregates with a very high degree of aggregation. Smaller nanoparticles with less polydisperse size distribution synthesized by thermal catalytic pyrolysis of silane form small open clusters. The Sauter mean diameters of the primary particles of the two types of nanoparticles were obtained from USAXS particle volume to surface ratio, with values of ∼41 and ∼21 nm obtained for the high energy milled and pyrolysis samples, respectively. Assuming a log-normal distribution of the particles, the geometric standard deviation of the particles was calculated to be ∼1.48 for all the samples, using parameters derived from the unified fit to the USAXS data. The flow properties of the inks and substrate combination lead to quantitative changes in the mean particle separation, with slowly curing systems with good capillary flow resulting in denser networks with smaller aggregates and better contact between particles.

  6. Two dimensional thermo-optic beam steering using a silicon photonic optical phased array

    Science.gov (United States)

    Mahon, Rita; Preussner, Marcel W.; Rabinovich, William S.; Goetz, Peter G.; Kozak, Dmitry A.; Ferraro, Mike S.; Murphy, James L.

    2016-03-01

    Components for free space optical communication terminals such as lasers, amplifiers, and receivers have all seen substantial reduction in both size and power consumption over the past several decades. However, pointing systems, such as fast steering mirrors and gimbals, have remained large, slow and power-hungry. Optical phased arrays provide a possible solution for non-mechanical beam steering devices that can be compact and lower in power. Silicon photonics is a promising technology for phased arrays because it has the potential to scale to many elements and may be compatible with CMOS technology thereby enabling batch fabrication. For most free space optical communication applications, two-dimensional beam steering is needed. To date, silicon photonic phased arrays have achieved two-dimensional steering by combining thermo-optic steering, in-plane, with wavelength tuning by means of an output grating to give angular tuning, out-of-plane. While this architecture might work for certain static communication links, it would be difficult to implement for moving platforms. Other approaches have required N2 controls for an NxN element phased array, which leads to complexity. Hence, in this work we demonstrate steering using the thermo-optic effect for both dimensions with a simplified steering mechanism requiring only two control signals, one for each steering dimension.

  7. Enhanced field emission from ZnO nanowires grown on a silicon nanoporous pillar array

    Science.gov (United States)

    Xu, Hai Jun; Chan, Yu Fei; Su, Lei; Li, De Yao; Sun, Xiao Ming

    2010-12-01

    A large scale heterostructure array of ZnO nanowires/silicon nanoporous pillar array (Si-NPA) was prepared by a self-catalytic thermal evaporation and vapor-phase transport method, and an ultrahigh field emission current density of 1.55 mA cm-2 was obtained under an operating electric field of 4.0 V μm-1, with a low turn-on field of 1.65 V μm-1. The enhancement factor calculated according to the Fowler-Nordheim theory was ˜3141. The excellent field emission performance was attributed to the unique structure of ZnO/Si-NPA, especially the formation of ZnO nanowires on regular Si pillar array. Our work indicated that ZnO/Si-NPA might be an ideal candidate cathode of potential applications in flat panel displays and high brightness electron sources.

  8. Laser desorption/ionization from nanostructured surfaces: nanowires, nanoparticle films and silicon microcolumn arrays

    International Nuclear Information System (INIS)

    Due to their optical properties and morphology, thin films formed of nanoparticles are potentially new platforms for soft laser desorption/ionization (SLDI) mass spectrometry. Thin films of gold nanoparticles (with 12±1 nm particle size) were prepared by evaporation-driven vertical colloidal deposition and used to analyze a series of directly deposited polypeptide samples. In this new SLDI method, the required laser fluence for ion detection was equal or less than what was needed for matrix-assisted laser desorption/ionization (MALDI) but the resulting spectra were free of matrix interferences. A silicon microcolumn array-based substrate (a.k.a. black silicon) was developed as a new matrix-free laser desorption ionization surface. When low-resistivity silicon wafers were processed with a 22 ps pulse length 3xω Nd:YAG laser in air, SF6 or water environment, regularly arranged conical spikes emerged. The radii of the spike tips varied with the processing environment, ranging from approximately 500 nm in water, to ∼2 μm in SF6 gas and to ∼5 μm in air. Peptide mass spectra directly induced by a nitrogen laser showed the formation of protonated ions of angiotensin I and II, substance P, bradykinin fragment 1-7, synthetic peptide, pro14-arg, and insulin from the processed silicon surfaces but not from the unprocessed areas. Threshold fluences for desorption/ionization were similar to those used in MALDI. Although compared to silicon nanowires the threshold laser pulse energy for ionization is significantly (∼10x) higher, the ease of production and robustness of microcolumn arrays offer complementary benefits

  9. Laser desorption/ionization from nanostructured surfaces: nanowires, nanoparticle films and silicon microcolumn arrays

    Energy Technology Data Exchange (ETDEWEB)

    Chen Yong [Department of Chemistry, George Washington University, Washington, DC 20052 (United States); Luo Guanghong [Department of Chemistry, George Washington University, Washington, DC 20052 (United States); Diao Jiajie [Department of Physics, George Washington University, Washington, DC 20052 (United States); Chornoguz, Olesya [Department of Chemistry, George Washington University, Washington, DC 20052 (United States); Reeves, Mark [Department of Physics, George Washington University, Washington, DC 20052 (United States); Vertes, Akos [Department of Chemistry, George Washington University, Washington, DC 20052 (United States)

    2007-04-15

    Due to their optical properties and morphology, thin films formed of nanoparticles are potentially new platforms for soft laser desorption/ionization (SLDI) mass spectrometry. Thin films of gold nanoparticles (with 12{+-}1 nm particle size) were prepared by evaporation-driven vertical colloidal deposition and used to analyze a series of directly deposited polypeptide samples. In this new SLDI method, the required laser fluence for ion detection was equal or less than what was needed for matrix-assisted laser desorption/ionization (MALDI) but the resulting spectra were free of matrix interferences. A silicon microcolumn array-based substrate (a.k.a. black silicon) was developed as a new matrix-free laser desorption ionization surface. When low-resistivity silicon wafers were processed with a 22 ps pulse length 3x{omega} Nd:YAG laser in air, SF{sub 6} or water environment, regularly arranged conical spikes emerged. The radii of the spike tips varied with the processing environment, ranging from approximately 500 nm in water, to {approx}2 {mu}m in SF{sub 6} gas and to {approx}5 {mu}m in air. Peptide mass spectra directly induced by a nitrogen laser showed the formation of protonated ions of angiotensin I and II, substance P, bradykinin fragment 1-7, synthetic peptide, pro14-arg, and insulin from the processed silicon surfaces but not from the unprocessed areas. Threshold fluences for desorption/ionization were similar to those used in MALDI. Although compared to silicon nanowires the threshold laser pulse energy for ionization is significantly ({approx}10x) higher, the ease of production and robustness of microcolumn arrays offer complementary benefits.

  10. Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

    Science.gov (United States)

    Cho, Heesook; Yoo, Hana; Park, Soojin

    2010-05-18

    Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

  11. High-performance uncooled amorphous silicon video graphics array and extended graphics array infrared focal plane arrays with 17-μm pixel pitch

    Science.gov (United States)

    Tissot, Jean-Luc; Tinnes, Sébastien; Durand, Alain; Minassian, Christophe; Robert, Patrick; Vilain, Michel; Yon, Jean-Jacques

    2011-06-01

    The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon with 45, 35, and 25 μm enables ULIS to develop video graphics array (VGA) and extended graphics array (XGA) infrared focal plane array (IRFPA) formats with 17-μm pixel pitch to fulfill every application. These detectors keep all the recent innovations developed on the 25-μm pixel-pitch read out integrated circuit (ROIC) (detector configuration by serial link, low power consumption, and wide electrical dynamic range). The specific appeal of these units lies in the high spatial resolution it provides while keeping the small thermal time constant. The reduction of the pixel pitch turns the VGA array into a product well adapted for high-resolution and compact systems and the XGA a product well adapted for high-resolution imaging systems. High electro-optical performances have been demonstrated with noise equivalent temperature difference (NETD) ROIC design. This technology node paves the way to high-end products as well as low-end, compact, smaller formats, such as 320 × 240 and 160 × 120 or smaller.

  12. Bundle Block Adjustment of Airborne Three-Line Array Imagery Based on Rotation Angles

    Directory of Open Access Journals (Sweden)

    Yongjun Zhang

    2014-05-01

    Full Text Available In the midst of the rapid developments in electronic instruments and remote sensing technologies, airborne three-line array sensors and their applications are being widely promoted and plentiful research related to data processing and high precision geo-referencing technologies is under way. The exterior orientation parameters (EOPs, which are measured by the integrated positioning and orientation system (POS of airborne three-line sensors, however, have inevitable systematic errors, so the level of precision of direct geo-referencing is not sufficiently accurate for surveying and mapping applications. Consequently, a few ground control points are necessary to refine the exterior orientation parameters, and this paper will discuss bundle block adjustment models based on the systematic error compensation and the orientation image, considering the principle of an image sensor and the characteristics of the integrated POS. Unlike the models available in the literature, which mainly use a quaternion to represent the rotation matrix of exterior orientation, three rotation angles are directly used in order to effectively model and eliminate the systematic errors of the POS observations. Very good experimental results have been achieved with several real datasets that verify the correctness and effectiveness of the proposed adjustment models.

  13. 15% Power Conversion Efficiency from a Gated Nanotube/Silicon Nanowire Array Solar Cell

    Science.gov (United States)

    Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V.; Kravchenko, Ivan I.; Rinzler, Andrew G.

    2015-03-01

    Despite their enhanced light trapping ability the performance of silicon nanowire array solar cells have, been stagnant with power conversion efficiencies barely breaking 10%. The problem is understood to be the consequence of a high photo-carrier recombination at the large surface area of the Si nanowire sidewalls. Here, by exploiting 1) electronic gating via an ionic liquid electrolyte to induce inversion in the n-type Si nanowires and 2) using a layer of single wall carbon nanotubes engineered to contact each nanowire tip and extract the minority carriers, we demonstrate silicon nanowire array solar cells with power conversion efficiencies of 15%. Our results allow for discrimination between the two principle means of avoiding front surface recombination: surface passivation and the use of local fields. A deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue a non-encapsulation based solution is also described. We gratefully acknowledge support from the National Science Foundation under ECCS-1232018.

  14. A two dimensional silicon detectors array for quality assurance in stereotactic radiotherapy: MagicPlate-512

    International Nuclear Information System (INIS)

    Purpose: Silicon diode arrays are commonly implemented in radiation therapy quality assurance applications as they have a number of advantages including: real time operation (compared to the film) and high spatial resolution, large dynamic range and small size (compared to ionizing chambers). Most diode arrays have detector pitch that is too coarse for routine use in small field applications. The goal of this work is to characterize the two-dimensional monolithic silicon diode array named “MagicPlate-512” (MP512) designed for QA in stereotactic body radiation therapy (SBRT) and stereotactic radio surgery (SRS). Methods: MP512 is a silicon monolithic detector manufactured on ap-type substrate. An array contains of 512 pixels with size 0.5 × 0.5 mm2 and pitch 2 mm with an overall dimension of 52 × 52 mm2. The MP512 monolithic detector is wire bonded on a printed circuit board 0.5 mm thick and covered by a thin layer of raisin to preserve the silicon detector from moisture and chemical contamination and to protect the bonding wires. Characterization of the silicon monolithic diode array response was performed, and included pixels response uniformity, dose linearity, percent depth dose, output factor, and beam profiling for beam sizes relevant to SBRT and SRS and depth dose response in comparison with ionization chamber. Results: MP512 shows a good dose linearity (R2 = 0.998) and repeatability within 0.2%. The measured depth dose response for field size of 10 × 10 cm2 agreed to within 1.3%, when compared to a CC13 ionization chamber for depths in PMMA up to 30 cm. The output factor of a 6 MV Varian 2100EX medical linac beam measured by MP512 at the isocenter agrees to within 2% when compared to PTW diamond, Scanditronix point EDD-2 diode and MOSkin detectors for field sizes down to 1 × 1 cm2. An over response of 4% was observed for square beam size smaller than 1 cm when compared to EBT3 films, while the beam profiles (FWHM) of MP512 match to within 2% the data

  15. Design and development of compact readout electronics with silicon photomultiplier array for a compact imaging detector

    Institute of Scientific and Technical Information of China (English)

    ZHANG Xiao-Hui; QI Yu-Jin; ZHAO Cui-Lan

    2012-01-01

    This work aims at developing compact readout electronics for a compact imaging detector module with silicon photomultiplier (SPM) array.The detector module consists of a LYSO crystal array coupling with a SensL's 4×4 SPM array.A compact multiplexed readout based on a discretized positioning circuit (DPC) was developed to reduce the readout channels from 16 to 4 outputs.Different LYSO crystal arrays of 4×4,8×8 and 12×12 with pixel sizes of 3.2,1.6 and 1.0 mm respectively,have been tested with the compact readout board using a 137Cs source.The initial results show that the compact imaging detector module with the compact multiplexed readout could clearly resolve 1 mm×1 mm×10 mm LYSO scintillation crystal array except those at the edges.The detector's intrinsic spatial resolution up to 1 mm can be achieved with the 3 mm×3 mm size SPMArray4 through light sharing and compact multiplexed readout.Our results indicate that this detector module is feasible for the development of high-resolution compact PET.

  16. Development of a silicon strip detector array for nuclear structure physics

    International Nuclear Information System (INIS)

    The Edinburgh nuclear physics group has been exploiting some of the unique features of silicon strip detectors (SSDs) in a variety of nuclear structure experiments using high energy photons and heavy-ion projectiles. Current experimental applications make use of large area (≅ 4-25 cm2), totally depleted SSDs with depletion thicknesses in the range ≅ 150-1000 μm and strip pitches of 2000 μm. In addition, two new device configurations are currently undergoing evaluation tests for future applications. These configurations are: (i) double-sided silicon strip detectors (i.e. ''quasi-pixel'' devices), and (ii) position sensitive silicon strip detectors. Silicon strip detectors are potentially a powerful tool for nuclear structure physics applications where charged particle detection is required. It is possible to construct charged particle detection systems with good energy and position resolution, large solid angle and high data throughput. To date however, it has not been possible to fully exploit the potential of SSDs because of the high cost and limited availability of appropriate instrumentation. To overcome this problem we are developing low cost hybrid microelectronic instrumentation in collaboration with the SERC Rutherford-Appleton Laboratory. (orig.)

  17. Integration of field emitter array and thin-film transistor using polycrystalline silicon process technology

    CERN Document Server

    Song, Y H; Kang, S Y; Park Jeong Man; Cho, K I

    1998-01-01

    We present the monolithic integration of a gated polycrystalline silicon field emitter array (poly-Si FEA) and a thin-film transistor(TFT) on an insulating substrate for active-matrix field emission displays (AMFEDs). The TFT was designed to have low off-state currents even at a high drain voltage. Amorphous silicon has been used as a starting material of the poly-Si FEA for improving surface smoothness and uniformity of the tips, and the gate holes have been formed by using an etch-back process. The integrated poly-Si TFT controlled electron emissions of the poly-Si FEA actively, resulting in great improvement in the emission reliability along with a low-voltage control, below 15 V, of field emission, The developed technology has potential applications in AMFEDs on glass substrates.

  18. Characterization of a highly-segmented silicon prototype for the TRACE array

    Directory of Open Access Journals (Sweden)

    Gelain M.

    2014-03-01

    Full Text Available In view of the construction of novel and high-sensitive instrumentation for the emerging ISOL facilities new prototypes have being implemented and tested. The contribution focuses at the investigation of the detection efficiency of an innovative silicon-pad prototype, which is the key element for the construction of the TRACE array, pursued for the SPES facility based at the Legnaro National Laboratories (Italy. The inter-pad size has been estimated by using a commercial 100-MHz-14-bit CAEN digitizer for sampling the signals obtained by an alpha-source scan over the inter-pad region.

  19. Enhanced Field Emission from Well-Patterned Silicon Nanoporous Pillar Arrays

    Institute of Scientific and Technical Information of China (English)

    FU Xiao-Nan; LI Xin-Jian

    2006-01-01

    @@ The silicon nanoporous pillar array (Si-NPA) is synthesized by using hydrothermal etching method, and the electron field emission properties are studied. The results show that Si-NPA has a low turn-on field of 1.48 V/μm at the emission current of 0.1 μA and its field emission is relatively stable. The field emission enhancement of Si-NPA is believed to originate from its unique morphology and structure. Our finding demonstrates that the Si-NPA is a promising candidate material for field emission applications.

  20. Fabrication of silicon nanowire arrays by near-field laser ablation and metal-assisted chemical etching

    Science.gov (United States)

    Brodoceanu, D.; Alhmoud, H. Z.; Elnathan, R.; Delalat, B.; Voelcker, N. H.; Kraus, T.

    2016-02-01

    We present an elegant route for the fabrication of ordered arrays of vertically-aligned silicon nanowires with tunable geometry at controlled locations on a silicon wafer. A monolayer of transparent microspheres convectively assembled onto a gold-coated silicon wafer acts as a microlens array. Irradiation with a single nanosecond laser pulse removes the gold beneath each focusing microsphere, leaving behind a hexagonal pattern of holes in the gold layer. Owing to the near-field effects, the diameter of the holes can be at least five times smaller than the laser wavelength. The patterned gold layer is used as catalyst in a metal-assisted chemical etching to produce an array of vertically-aligned silicon nanowires. This approach combines the advantages of direct laser writing with the benefits of parallel laser processing, yielding nanowire arrays with controlled geometry at predefined locations on the silicon surface. The fabricated VA-SiNW arrays can effectively transfect human cells with a plasmid encoding for green fluorescent protein.

  1. Research on analytical model and design formulas of permanent magnetic bearings based on Halbach array with arbitrary segmented magnetized angle

    Science.gov (United States)

    Wang, Nianxian; Wang, Dongxiong; Chen, Kuisheng; Wu, Huachun

    2016-07-01

    The bearing capacity of permanent magnetic bearings can be improved efficiently by using the Halbach array magnetization. However, the research on analytical model of Halbach array PMBs with arbitrary segmented magnetized angle has not been developed. The application of Halbach array PMBs has been limited by the absence of the analytical model and design formulas. In this research, the Halbach array PMBs with arbitrary segmented magnetized angle has been studied. The magnetization model of bearings is established. The magnetic field distribution model of the permanent magnet array is established by using the scalar magnetic potential model. On the basis of this, the bearing force model and the bearing stiffness model of the PMBs are established based on the virtual displacement method. The influence of the pair of magnetic rings in one cycle and the structure parameters of PMBs on the maximal bearing capacity and support stiffness characteristics are studied. The reference factors for the design process of PMBs have been given. Finally, the theoretical model and the conclusions are verified by the finite element analysis.

  2. Photosensor Characterization for the Cherenkov Telescope Array: Silicon Photomultiplier versus Multi-Anode Photomultiplier Tube

    CERN Document Server

    Bouvier, Aurelien; Johnson, Caitlin; Kuznetsov, Andrey; Williams, David; Otte, Nepomuk; Strausbaugh, Robert; Hidaka, Naoya; Tajima, Hiroyasu; Hinton, Jim; White, Richard; Errando, Manel; Mukherjee, Reshmi

    2013-01-01

    Photomultiplier tube technology has been the photodetector of choice for the technique of imaging atmospheric Cherenkov telescopes since its birth more than 50 years ago. Recently, new types of photosensors are being contemplated for the next generation Cherenkov Telescope Array. It is envisioned that the array will be partly composed of telescopes using a Schwarzschild-Couder two mirror design never built before which has significantly improved optics. The camera of this novel optical design has a small plate scale which enables the use of compact photosensors. We present an extensive and detailed study of the two most promising devices being considered for this telescope design: the silicon photomultiplier and the multi-anode photomultiplier tube. We evaluated their most critical performance characteristics for imaging gamma-ray showers, and we present our results in a cohesive manner to clearly evaluate the advantages and disadvantages that both types of device have to offer in the context of GeV-TeV gamma...

  3. Fabrication of High Aspect Ratio Micro-Penning-Malmberg Gold Plated Silicon Trap Arrays

    CERN Document Server

    Narimannezhad, Alireza; Weber, Marc H; Lynn, Kelvin G

    2013-01-01

    Acquiring a portable high density charged particles trap might consist of an array of micro-Penning-Malmberg traps (microtraps) with substantially lower end barriers potential than conventional Penning-Malmberg traps [1]. We report on the progress of the fabrication of these microtraps designed for antimatter storage such as positrons. The fabrication of large length to radius aspect ratio (1000:1) microtrap arrays involved advanced techniques including photolithography, deep reactive ion etching (DRIE) of silicon wafers to achieve through-vias, gold sputtering of the wafers on the surfaces and inside the vias, and thermal compression bonding of the wafers. This paper describes the encountered issues during fabrication and addresses geometry errors and asymmetries. In order to minimize the patch effects on the lifetime of the trapped positrons, the bonded stacks were gold electroplated to achieve a uniform gold surface. We show by simulation and analytical calculation that how positrons confinement time depen...

  4. Synthesizing wide-angle and arbitrary view-point images from a circular camera array

    Science.gov (United States)

    Fukushima, Norishige; Yendo, Tomohiro; Fujii, Toshiaki; Tanimoto, Masayuki

    2006-02-01

    We propose a technique of Imaged-Based Rendering(IBR) using a circular camera array. By the result of having recorded the scene as surrounding the surroundings, we can synthesize a more dynamic arbitrary viewpoint images and a wide angle images like a panorama . This method is based on Ray- Space, one of the image-based rendering, like Light Field. Ray-Space is described by the position (x, y) and a direction (θ, φ) of the ray's parameter which passes a reference plane. All over this space, when the camera has been arranged circularly, the orbit of the point equivalent to an Epipor Plane Image(EPI) at the time of straight line arrangement draws a sin curve. Although described in a very clear form, in case a rendering is performed, pixel of which position of which camera being used and the work for which it asks become complicated. Therefore, the position (u, v) of the position (s, t) pixel of a camera like Light Filed redescribes space expression. It makes the position of a camera a polar-coordinates system (r, theta), and is making it close to description of Ray-Space. Thereby, although the orbit of a point serves as a complicated periodic function of periodic 2pi, the handling of a rendering becomes easy. From such space, the same as straight line arrangement, arbitrary viewpoint picture synthesizing is performed only due to a geometric relationship between cameras. Moreover, taking advantage of the characteristic of concentrating on one circular point, we propose the technique of generating a wide-angle picture like a panorama. When synthesizing a viewpoint, since it is overlapped and is recording the ray of all the directions of the same position, this becomes possible. Having stated until now is the case where it is a time of the camera fully having been arranged and a plenoptic sampling being filled. The discrete thing which does not fill a sampling is described from here. When arranging a camera in a straight line and compounding a picture, in spite of

  5. Preparing magnetic yttrium iron garnet nanodot arrays by ultrathin anodic alumina template on silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Hui; Han, Mangui, E-mail: han-mangui@yahoo.com; Deng, Longjiang [National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, Liang; Zheng, Peng; Qin, Huibin [Institute of Electron Device and Application, Hangzhou Dianzi University, Hangzhou 310008 (China); Wu, Qiong [Magnetism Key Laboratory of Zhejiang Province, China Jiliang University, Hangzhou 310018 (China)

    2015-08-10

    Ultrahigh density periodically ordered magnetic yttrium iron garnet (Y{sub 3}Fe{sub 5}O{sub 12}, YIG) nanodot arrays have been prepared by pulsed laser deposition through an ultrathin alumina mask (UTAM). UTAM having periodically ordered circularly shaped holes with 350 nm in diameter, 450 nm in inter-pore distance, and 700 nm in height has been prepared on silicon substrate. Furthermore, the microstructure and magnetic properties of YIG nanodot arrays have been characterized. Nanodot arrays with a sharp distribution in diameter centered at 340 nm with standard deviation of 10 nm have been fabricated. Moreover, typical hysteresis loops and ferromagnetic resonance spectra in in-plane and out-of-plane revealed that this unique structure greatly influences the magnetics properties of YIG. First, coercivity of YIG nanodot arrays in in-plane was increased about from 15 Oe of YIG films to 500 Oe. Then, the degree of uniformity about nanodot height decided that two or more resonance peaks in out-of-plane were detected in the spectra. The peak-to-peak linewidth values were about 94 Oe and 40 Oe in the parallel and perpendicular directions, respectively, which indicated that the values were larger by the two-magnon scattering. Consequently, this pattering method creates opportunities for studying physics in oxide nanomagnets and may be applied in spin-wave devices.

  6. Monolithic arrays of silicon drift detectors for medical imaging applications and related CMOS readout electronics

    Energy Technology Data Exchange (ETDEWEB)

    Fiorini, C. [Politecnico di Milano, Dipartimento di Elettronica e Informazione, Milan (Italy) and INFN, Sezione di Milano, Milan (Italy)]. E-mail: carlo.fiorini@polimi.it; Longoni, A. [Politecnico di Milano, Dipartimento di Elettronica e Informazione, Milan (Italy); INFN, Sezione di Milano, Milan (Italy); Porro, M. [Politecnico di Milano, Dipartimento di Ingegneria Nucleare, Milan (Italy); INFN, Sezione di Milano, Milan (Italy); Perotti, F. [Istituto di Astrofisica Spaziale e Fisica Cosmica - INAF, Milan (Italy); Lechner, P. [PNSensors, Munich (Germany); Strueder, L. [MPI fuer Extraterrestrische Physik Halbleiterlabor, Munich (Germany)

    2006-05-01

    Monolithic arrays of Silicon Drift Detectors (SDDs) have been recently proposed to be used with scintillators for high-position-resolution {gamma}-ray imaging applications. Thanks to the low electronics noise due to the small value of the output capacitance, the SDD offers better performances with respect to conventional photodiodes of the same geometry. We show the results achieved with a small monolithic array of SDDs, each one with a front-end JFET integrated at its center, used as photodetector in a first prototype of Anger Camera. An intrinsic resolution better than 200 {mu}m has been achieved with this prototype. Moreover, we describe a new monolithic array of SDDs composed of 77 single hexagonal units, each one with an active area of 8.7 mm{sup 2}, for a total active area of the device of 6.7 cm{sup 2}. Finally, the basic principles and the first results of the CMOS readout chip specifically designed for the readout of the signals from SDDs arrays are presented.

  7. Monolithic arrays of silicon drift detectors for medical imaging applications and related CMOS readout electronics

    International Nuclear Information System (INIS)

    Monolithic arrays of Silicon Drift Detectors (SDDs) have been recently proposed to be used with scintillators for high-position-resolution γ-ray imaging applications. Thanks to the low electronics noise due to the small value of the output capacitance, the SDD offers better performances with respect to conventional photodiodes of the same geometry. We show the results achieved with a small monolithic array of SDDs, each one with a front-end JFET integrated at its center, used as photodetector in a first prototype of Anger Camera. An intrinsic resolution better than 200 μm has been achieved with this prototype. Moreover, we describe a new monolithic array of SDDs composed of 77 single hexagonal units, each one with an active area of 8.7 mm2, for a total active area of the device of 6.7 cm2. Finally, the basic principles and the first results of the CMOS readout chip specifically designed for the readout of the signals from SDDs arrays are presented

  8. Fabrication of porous silicon by metal-assisted etching using highly ordered gold nanoparticle arrays

    Science.gov (United States)

    Scheeler, Sebastian P.; Ullrich, Simon; Kudera, Stefan; Pacholski, Claudia

    2012-08-01

    A simple method for the fabrication of porous silicon (Si) by metal-assisted etching was developed using gold nanoparticles as catalytic sites. The etching masks were prepared by spin-coating of colloidal gold nanoparticles onto Si. An appropriate functionalization of the gold nanoparticle surface prior to the deposition step enabled the formation of quasi-hexagonally ordered arrays by self-assembly which were translated into an array of pores by subsequent etching in HF solution containing H2O2. The quality of the pattern transfer depended on the chosen preparation conditions for the gold nanoparticle etching mask. The influence of the Si surface properties was investigated by using either hydrophilic or hydrophobic Si substrates resulting from piranha solution or HF treatment, respectively. The polymer-coated gold nanoparticles had to be thermally treated in order to provide a direct contact at the metal/Si interface which is required for the following metal-assisted etching. Plasma treatment as well as flame annealing was successfully applied. The best results were obtained for Si substrates which were flame annealed in order to remove the polymer matrix - independent of the substrate surface properties prior to spin-coating (hydrophilic or hydrophobic). The presented method opens up new resources for the fabrication of porous silicon by metal-assisted etching. Here, a vast variety of metal nanoparticles accessible by well-established wet-chemical synthesis can be employed for the fabrication of the etching masks.

  9. Field emission from zinc oxide nanorod bundles grown on silicon nanoporous pillar array

    Science.gov (United States)

    Wang, Ling Li; Gong, Shang Dong; Wu, Li Hong; Li, Xin Jian

    2013-04-01

    A large-area zinc oxide (ZnO) nanorod bundle array was grown on a silicon nanoporous pillar array (Si-NPA) substrate by a chemical vapor deposition method, and its field-emission properties was studied. The structural characterization disclosed that the bundles were composed of hexagonal ZnO nanorods growing along c-axis and taking roots into the silicon pillars of Si-NPA. The average diameter and length of the ZnO nanorods were ∼145 nm and ∼10 μm, respectively. The field-emission measurements showed that the turn-on field of ZnO/Si-NPA was 4.6 V/μm with an emission current density (ECD) of 1 μA/cm2, and an ECD of 420 μA/cm2 was achieved at an applied field of 8.89 V/μm. The field enhancement factor was calculated to be ∼1700 based on the Fowler-Nordheim theory. According to the obtained charge coupled device (CCD) image, the density and brightness of the emission dots increased with the applied field, and the high emission dot density was attributed to the formation of a large number of ZnO nanorod emitting tips. Our results indicated that ZnO/Si-NPA might be a promising electron emission source.

  10. Field emission from zinc oxide nanorod bundles grown on silicon nanoporous pillar array

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ling Li; Gong, Shang Dong; Wu, Li Hong [Department of Physics and Laboratory of Materials Physics, Zhengzhou University, Zhengzhou 450052 (China); Li, Xin Jian, E-mail: lixj@zzu.edu.cn [Department of Physics and Laboratory of Materials Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2013-04-01

    A large-area zinc oxide (ZnO) nanorod bundle array was grown on a silicon nanoporous pillar array (Si-NPA) substrate by a chemical vapor deposition method, and its field-emission properties was studied. The structural characterization disclosed that the bundles were composed of hexagonal ZnO nanorods growing along c-axis and taking roots into the silicon pillars of Si-NPA. The average diameter and length of the ZnO nanorods were ∼145 nm and ∼10 μm, respectively. The field-emission measurements showed that the turn-on field of ZnO/Si-NPA was 4.6 V/μm with an emission current density (ECD) of 1 μA/cm{sup 2}, and an ECD of 420 μA/cm{sup 2} was achieved at an applied field of 8.89 V/μm. The field enhancement factor was calculated to be ∼1700 based on the Fowler–Nordheim theory. According to the obtained charge coupled device (CCD) image, the density and brightness of the emission dots increased with the applied field, and the high emission dot density was attributed to the formation of a large number of ZnO nanorod emitting tips. Our results indicated that ZnO/Si-NPA might be a promising electron emission source.

  11. Directing polyallylamine adsorption on microlens array patterned silicon for microarray fabrication.

    Science.gov (United States)

    Saini, Gaurav; Gates, Richard; Asplund, Matthew C; Blair, Steve; Attavar, Sachin; Linford, Matthew R

    2009-06-21

    The selective adsorption of reagents is often essential for bioarray and lab-on-a-chip type devices. As the starting point for a bioarray, alkyl monolayer terminated silicon shards were photopatterned in a few nanoseconds with thousands of wells (spots) using an optical element, a microlens array. Polyallylamine (PAAm), a primary amine containing polymer, adsorbed with little selectivity to the spots, i.e., silicon oxide, over the hydrophobic background. However, at appropriate concentrations, addition of a cationic surfactant to the PAAm deposition solution, cetyltrimethylammonium chloride, prevented the nonspecific adsorption of PAAm onto the hydrophobic monolayer, while directing it effectively to the active spots on the device. A nonionic surfactant was less effective in preventing the nonspecific adsorption of PAAm onto the hydrophobic monolayer. The localized reactions/interactions of adsorbed PAAm with four species that are useful for bioconjugate chemistry: glutaric anhydride, phenylenediisothiocyanate, biotin NHS ester, and an oligonucleotide (DNA) were shown in the spots of an array. The reactivity of PAAm was further demonstrated with an isocyanate. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) played an important role in confirming selective surface reactivity and adsorption. X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, and wetting confirmed PAAm reactivity on planar substrates. PMID:19495464

  12. Synthesis, Characterization and Kinetics of Epitaxial-Oriented Silicon Nanowire Arrays on Si Substrates

    Science.gov (United States)

    Wang, Z. L.; Bao, J. K.; Wan, Y. T.; Xia, W. W.; Wang, Y. W.; Sha, J.

    The fabrication of vertical-oriented, high aspect ratio silicon nanowires (SiNWs) with controllable density and length is of interest for the development of nanowire-based electronics and photovoltaic devices. Here we reported a both simple and economical method for synthesizing large-area epitaxial-oriented SiNW arrays, which was achieved on the Si (111) substrates by Au catalyzed vapor-liquid-solid mechanism using the conventional chemical vapor deposition furnace system. Their morphologies and microstructures were investigated with scanning electron microscopy and transmission electron microscopy, respectively. The results showed that most of nanowires were vertically grown on substrates, their density and length can be well controlled. As-grown SiNW is composed of a single crystalline silicon core and a thin amorphous silicon oxide coating layer. Furthermore, their growth kinetics was discussed in detail. It indicates that there are both the substrate-nanowire Si adatom surface diffusion and the slight radial growth during the upgrowth of nanowire, and besides, the migration of Au on the sidewall of nanowire was also found for such epitaxial-oriental SiNWs.

  13. Photoemission and photo-field-emission from photocathodes with arrays of silicon tips under continuous and pulsed lasers action

    International Nuclear Information System (INIS)

    The electron machines's development and improvement go through the discovery of new electron sources of high brightness. After reminding the interests in studying silicon cathodes with array of tips as electron sources, I describe, in the three steps model, the main phenomenological features related to photoemission and photoemission and photo-field-emission from a semi-conductor. the experimental set-ups used for the measurements reported in chapter four, five and six are described in chapter three. In chapter three. In chapter four several aspects of photo-field-emission in continuous and nanosecond regimes, studied on the Clermont-Ferrand's test bench are tackled. We have measured quantum efficacies of 0.4 percent in the red (1.96 eV). Temporal responses in the nanoseconds range (10 ns) were observed with the Nd: YLF laser. With the laser impinging at an oblique angle we obtained ratios of photocurrent to dark current of the order of twenty. The issue of the high energy extracted photocurrent saturation is addressed and I give a preliminary explanation. In collaboration with the L.A.L. (Laboratoire de l'Accelerateur Lineaire) some tests with shortened pulsed laser beam (Nd: YAG laser 35 ps) were performed. Satisfactory response times have been obtained within the limitation of the scope (400 ps). (authors). 101 refs. 93 figs., 27 tabs., 3 photos., 1 append

  14. Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

    Science.gov (United States)

    Lee, Ya-Ju; Yang, Zu-Po; Lo, Fang-Yuh; Siao, Jhih-Jhong; Xie, Zhong-Han; Chuang, Yi-Lun; Lin, Tai-Yuan; Sheu, Jinn-Kong

    2014-05-01

    High-efficient ZnO-based nanorod array light-emitting diodes (LEDs) were grown by an oblique-angle deposition scheme. Due to the shadowing effect, the inclined ZnO vapor-flow was selectively deposited on the tip surfaces of pre-fabricated p-GaN nanorod arrays, resulting in the formation of nanosized heterojunctions. The LED architecture composed of the slanted n-ZnO film on p-GaN nanorod arrays exhibits a well-behaving current rectification of junction diode with low turn-on voltage of 4.7 V, and stably emits bluish-white luminescence with dominant peak of 390 nm under the operation of forward injection currents. In general, as the device fabrication does not involve passivation of using a polymer or sophisticated material growth techniques, the revealed scheme might be readily applied on other kinds of nanoscale optoelectronic devices.

  15. Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

    Directory of Open Access Journals (Sweden)

    Ya-Ju Lee

    2014-05-01

    Full Text Available High-efficient ZnO-based nanorod array light-emitting diodes (LEDs were grown by an oblique-angle deposition scheme. Due to the shadowing effect, the inclined ZnO vapor-flow was selectively deposited on the tip surfaces of pre-fabricated p-GaN nanorod arrays, resulting in the formation of nanosized heterojunctions. The LED architecture composed of the slanted n-ZnO film on p-GaN nanorod arrays exhibits a well-behaving current rectification of junction diode with low turn-on voltage of 4.7 V, and stably emits bluish-white luminescence with dominant peak of 390 nm under the operation of forward injection currents. In general, as the device fabrication does not involve passivation of using a polymer or sophisticated material growth techniques, the revealed scheme might be readily applied on other kinds of nanoscale optoelectronic devices.

  16. Impact ionization in high resistivity silicon induced by an intense terahertz field enhanced by an antenna array

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun; Iwaszczuk, Krzysztof; Zalkovskij, Maksim;

    2015-01-01

    antenna array. The carrier multiplication is probed by the frequency shift of the resonance of the antenna array due to the change of the local refractive index of the substrate. Experimental results and simulations show that the carrier density in silicon increases by over seven orders of magnitude in......We report on the observation of ultrafast impact ionization and carrier generation in high resistivity silicon induced by intense subpicosecond terahertz transients. Local terahertz peak electric fields of several MV cm−1 are obtained by field enhancement in the near field of a resonant metallic...

  17. A Stable Flexible Silicon Nanowire Array as Anode for High-Performance Lithium-ion Batteries

    International Nuclear Information System (INIS)

    Highlights: • A flexible SiNW array in PDMS structure is designed and fabricated as Li-ion battery anode material. • The aggregation and fracture of SiNWs are alleviated by the flexible PDMS skeleton during the process of charge and discharge. • The loose SiO2 shells coating on the SiNWscould form the protective layer in charge/discharge. • The as-obtain flexible SiNW array/PDMS composite exhibits a much better cycling stability. - Abstract: A Silicon nanowire (SiNW) array inserted into flexible poly-dimethylsiloxane (SiNW array/PDMS) composite structure as anode with high capacity and long-term cycling stability is synthesized by a cost-effective and scalable method. In this structure, the aggregation and fracture of SiNWs are alleviated by the flexible PDMS skeleton. Act as the main active component, the SiNWs are coated by loose SiO2 shells. These loose SiO2 shells not only provide space for the large volume changes of SiNW, but also react with the electrolyte and form the stable protective layer during the processes of the lithiation and delithiation. These two functions could improve the cycling stability and columbic efficiency of the SiNWs. The as-obtain flexible SiNW array/PDMS composite structure exhibits excellent long-term cycling stability with a specific capacity of 887.2 mA·h·g−1 and capacity retention of ∼83.4% over 350 cycles at 0.5 C rate compared with the fifteenth cycle. The design of this new structure provides a potential way for developing other functional composite materials

  18. The status of lightweight photovoltaic space array technology based on amorphous silicon solar cells

    Science.gov (United States)

    Hanak, Joseph J.; Kaschmitter, Jim

    1991-01-01

    Ultralight, flexible photovoltaic (PV) array of amorphous silicon (a-Si) was identified as a potential low cost power source for small satellites. A survey was conducted of the status of the a-Si PV array technology with respect to present and future performance, availability, cost, and risks. For existing, experimental array blankets made of commercial cell material, utilizing metal foil substrates, the Beginning of Life (BOL) performance at Air Mass Zero (AM0) and 35 C includes total power up to 200 W, power per area of 64 W/sq m and power per weight of 258 W/kg. Doubling of power per weight occurs when polyimide substrates are used. Estimated End of Life (EOL) power output after 10 years in a nominal low earth orbit would be 80 pct. of BOL, the degradation being due to largely light induced effects (-10 to -15 pct.) and in part (-5 pct.) to space radiation. Predictions for the year 1995 for flexible PV arrays, made on the basis of published results for rigid a-Si modules, indicate EOL power output per area and per weight of 105 W/sq m and 400 W/kg, respectively, while predictions for the late 1990s based on existing U.S. national PV program goals indicate EOL values of 157 W/sq m and 600 W/kg. Cost estimates by vendors for 200 W ultralight arrays in volume of over 1000 units range from $100/watt to $125/watt. Identified risks include the lack of flexible, space compatible encapsulant, the lack of space qualification effort, recent partial or full acquisitions of US manufacturers of a-Si cells by foreign firms, and the absence of a national commitment for a long range development program toward developing of this important power source for space.

  19. The effects of oxygen plasma and humidity on surface roughness, water contact angle and hardness of silicon, silicon dioxide and glass

    International Nuclear Information System (INIS)

    For heterogeneous integration in many More-than-Moore applications, surface preparation is the key step to realizing well-bonded multiple substrates for electronics, photonics, fluidics and/or mechanical components without a degradation in performance. Therefore, it is critical to understand how various processing and environmental conditions affect their surface properties. In this paper, we investigate the effects of oxygen plasma and humidity on some key surface properties such as the water contact angle, roughness and hardness of three materials: silicon (Si), silicon dioxide (SiO2) and glass, and their impact on bondability. The low surface roughness, high surface reactivity and high hydrophilicity of Si, SiO2 and glass at lower activation times can result in better bondability. Although, the surface reactivity of plasma-ambient-humidity-treated Si and SiO2 is considerably reduced, their reduction of roughness and increase of hydrophilicity may enable good bonding at low temperature heating due to augmented hydroxyl groups. The decrease of hardness of Si and SiO2 with increased activation time is attributed to higher surface roughness and the formation of amorphous layers of Si. While contact angle and surface roughness results show a correlation with bondability, the role of hardness on bondability requires further investigation. (paper)

  20. Comparative anomalous small-angle X-ray scattering study of hotwire and plasma grown amorphous silicon-germanium alloys

    OpenAIRE

    Goerigk, G.; Williamson, D. L.

    2001-01-01

    The nanostructure of hydrogenated amorphous silicon-germanium alloys, a-Si1-xGex:H, prepared by the hotwire deposition technique (x=0.06-0.79) and by the plasma enhanced chemical vapor deposition technique (x=0 and 0.50) was analyzed by anomalous small-angle x-ray scattering experiments. For all alloys with x >0 the Ge component was found to be inhomogeneously distributed with correlation lengths of about 1 nm. A systematic increase of the separated scattering was found due to the increasing ...

  1. Development of silicon monolithic arrays for dosimetry in external beam radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Bisello, Francesca, E-mail: francesca.bisello@iba-group.com [IBA Dosimetry GmbH, Schwarzenbruck (Germany); Friedrich-Alexander Universität Erlangen—Nürnberg, Erlangen (Germany); Menichelli, David [IBA Dosimetry GmbH, Schwarzenbruck (Germany); Scaringella, Monica [University of Florence, Firenze (Italy); INFN—Florence Division, Sesto Fiorentino (Italy); Talamonti, Cinzia; Zani, Margherita; Bucciolini, Marta [University of Florence, Firenze (Italy); Azienda Ospedaliera Unversitaria Careggi, Firenze (Italy); Bruzzi, Mara [University of Florence, Firenze (Italy); INFN—Florence Division, Sesto Fiorentino (Italy)

    2015-10-01

    New tools for dosimetry in external beam radiotherapy have been developed during last years in the framework of the collaboration among the University of Florence, INFN Florence and IBA Dosimetry. The first step (in 2007) was the introduction in dosimetry of detector solutions adopted from high energy physics, namely epitaxial silicon as the base detector material and a guard ring in diode design. This allowed obtaining state of the art radiation hardness, in terms of sensitivity dependence on accumulated dose, with sensor geometry particularly suitable for the production of monolithic arrays with modular design. Following this study, a 2D monolithic array has been developed, based on 6.3×6.3 cm{sup 2} modules with 3 mm pixel pitch. This prototype has been widely investigated and turned out to be a promising tool to measure dose distributions of small and IMRT fields. A further linear array prototype has been recently design with improve spatial resolution (1 mm pitch) and radiation hardness. This 24 cm long device is constituted by 4×64 mm long modules. It features low sensitivity changes with dose (0.2%/kGy) and dose per pulse (±1% in the range 0.1–2.3 mGy/pulse, covering applications with flattened and unflattened photon fields). The detector has been tested with very satisfactory results as a tool for quality assurance of linear accelerators, with special regards to small fields, and proton pencil beams. In this contribution, the characterization of the linear array with unflattened MV X-rays, {sup 60}Co radiation and 226 MeV protons is reported. - Highlights: • A silicon monolithic 1D array with 1 mm pixel pitch was developed. • The detector was characterized with {sup 60}Co, unflattened MV X-rays, 226 MeV protons. • Dose linearity in clinical relevance range and dose profiles were measured. • The detector performs good agreement with reference detectors. • The technology is suitable in dose profiling in MV X-ray and proton therapy.

  2. Field Emission Properties of Multi-walled Carbon Nanotubes Grown on Silicon Nanoporous Pillar Array

    Science.gov (United States)

    Jiang, Wei-fen; Li, Long-yu; Xiao, Shun-hua; Yang, Xiao-hui; Jia, Min; Li, Xin-jian

    2007-12-01

    Multi-walled carbon nanotubes (CNTs) were grown on a silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition. Surface morphologies and microstructure of the resultant were studied by a field emission scanning electron microscope, Raman spectrum, transmission electron microscope, and high-resolution transmission electron microscopy. The composition of samples was determined by energy dispersive X-ray spectroscopy (EDS). The results showed that a great deal of CNTs, with diameter in the range of 20-70 nm, incorporated with Si-NPA and a large scale nest array of CNTs/Si-NPA (NACNT/Si-NPA) was formed. EDS analysis showed that the composition of carbon nanotubes was carbon. Field emission measurements showed that a current density of 5 mA/cm2 was obtained at an electric field of 4.26 V/μm, with a turn-on field of 1.3 V/μm. The enhancement factor calculated according to the Fowler-Nordheim theory was ~11,000. This excellent field emission performance is attributed to the unique structure and morphology of NACNT/Si-NPA, especially the formation of a nest-shaped carbon nanotube array. A schematic drawing that illustrates the experimental configuration is given. These results indicate that NACNT/Si-NPA might be an ideal candidate cathode for potential applications in flat panel displays.

  3. Develop silicone encapsulation systems for terrestrial silicon solar arrays. Fifth quarterly progress report, April 1-June 30, 1979

    Energy Technology Data Exchange (ETDEWEB)

    1979-07-01

    This study is directed toward the development of a cost effective encapsulation system for photovoltaic modules using silicone based materials. Progress is reported under the headings (1) Weather-Ometer stressing vs weathering history of silicone and silicone modified materials, (2) thermal cycling stress test results, (3) dirt pickup and retention measured by outdoor exposure, (4) silicone-acrylic copolymers as encapsulants, and (5) cover films containing uv absorbers. (WHK)

  4. Broadband High Efficiency Fractal-Like and Diverse Geometry Silicon Nanowire Arrays for Photovoltaic Applications

    Science.gov (United States)

    AL-Zoubi, Omar H.

    Solar energy has many advantages over conventional sources of energy. It is abundant, clean and sustainable. One way to convert solar energy directly into electrical energy is by using the photovoltaic solar cells (PVSC). Despite PVSC are becoming economically competitive, they still have high cost and low light to electricity conversion efficiency. Therefore, increasing the efficiency and reducing the cost are key elements for producing economically more competitive PVSC that would have significant impact on energy market and saving environment. A significant percentage of the PVSC cost is due to the materials cost. For that, thin films PVSC have been proposed which offer the benefits of the low amount of material and fabrication costs. Regrettably, thin film PVSC show poor light to electricity conversion efficiency because of many factors especially the high optical losses. To enhance conversion efficiency, numerous techniques have been proposed to reduce the optical losses and to enhance the absorption of light in thin film PVSC. One promising technique is the nanowire (NW) arrays in general and the silicon nanowire (SiNW) arrays in particular. The purpose of this research is to introduce vertically aligned SiNW arrays with enhanced and broadband absorption covering the entire solar spectrum while simultaneously reducing the amount of material used. To this end, we apply new concept for designing SiNW arrays based on employing diversity of physical dimensions, especially radial diversity within certain lattice configurations. In order to study the interaction of light with SiNW arrays and compute their optical properties, electromagnetic numerical modeling is used. A commercial numerical electromagnetic solver software package, high frequency structure simulation (HFSS), is utilized to model the SiNW arrays and to study their optical properties. We studied different geometries factors that affect the optical properties of SiNW arrays. Based on this study, we

  5. Study of dc micro-discharge arrays made in silicon using CMOS compatible technology

    Science.gov (United States)

    Kulsreshath, M. K.; Schwaederle, L.; Overzet, L. J.; Lefaucheux, P.; Ladroue, J.; Tillocher, T.; Aubry, O.; Woytasik, M.; Schelcher, G.; Dussart, R.

    2012-07-01

    In this paper we present the fabrication technology used to make micro-discharge ‘reactors’ on a silicon (Si) substrate. For the fabrication of these reactors we have used Si wafers with 4 inch diameter and standard cleanroom facilities. The fabrication technology used is compatible with standard CMOS device fabrication and the fabricated micro-discharge reactors can be used to produce dc discharges. These micro-discharges operate at near atmospheric pressure. They were given ring-shaped anodes separated from the cathode by a SiO2 dielectric with a thickness of approximately 5-6 µm rather than the much more common ˜100 µm. The micro-discharge reactors can consist of either a single hole or multiple holes and we have built devices with holes from 25 to 150 µm in diameter. The micro-discharge measurements were obtained for helium and argon dc plasmas between 100 and 1000 Torr. We used a single ballast resistor to produce micro-discharges in multi-hole array. This resistor also acted to limit the discharge power. An average current density of 0.8 A cm-2 was calculated for the 1024 holes array with 100 µm diameter holes. In addition, we will report on stability of micro-discharges depending on the cavity configuration of the micro-reactors and the ignition trends for the micro-discharge arrays. Finally, we discuss the life time of micro-discharge arrays as well as the factors affecting them (cathode sputtering, thermally affected zones, etc).

  6. A Silicon-Based Nanothin Film Solid Oxide Fuel Cell Array with Edge Reinforced Support for Enhanced Thermal Mechanical Stability.

    Science.gov (United States)

    Baek, Jong Dae; Yu, Chen-Chiang; Su, Pei-Chen

    2016-04-13

    A silicon-based micro-solid oxide fuel cell (μ-SOFC) with electrolyte membrane array embedded in a thin silicon supporting membrane, featuring a unique edge reinforcement structure, was demonstrated by utilizing simple silicon micromachining processes. The square silicon supporting membrane, fabricated by combining deep reactive ion etching and through-wafer wet etching processes, has thicker edges and corners than the center portion of the membrane, which effectively improved the mechanical stability of the entire fuel cell array during cell fabrication and cell operation. The 20 μm thick single crystalline silicon membrane supports a large number of 80 nm thick free-standing yttria-stabilized zirconia (YSZ) electrolytes. The fuel cell array was stably maintained at the open circuit voltage (OCV) of 1.04 V for more than 30 h of operation at 350 °C. A high peak power density of 317 mW/cm(2) was obtained at 400 °C. During a rigorous in situ thermal cycling between 150 and 400 °C at a fast cooling and heating rate of 25 °C/min, the OCV of the μ-SOFC recovered to its high value of 1.07 V without any drop caused by membrane failure, which justifies the superior thermal stability of this novel cell architecture. PMID:26990604

  7. Microfabrication of an Implantable silicone Microelectrode array for an epiretinal prosthesis

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, M

    2003-06-10

    Millions of people suffering from diseases such as retinitis pigmentosa and macular degeneration are legally blind due to the loss of photoreceptor function. Fortunately a large percentage of the neural cells connected to the photoreceptors remain viable, and electrical stimulation of these cells has been shown to result in visual perception. These findings have generated worldwide efforts to develop a retinal prosthesis device, with the hope of restoring vision. Advances in microfabrication, integrated circuits, and wireless technologies provide the means to reach this challenging goal. This dissertation describes the development of innovative silicone-based microfabrication techniques for producing an implantable microelectrode array. The microelectrode array is a component of an epiretinal prosthesis being developed by a multi-laboratory consortium. This array will serve as the interface between an electronic imaging system and the human eye, directly stimulating retinal neurons via thin film conducting traces. Because the array is intended as a long-term implant, vital biological and physical design requirements must be met. A retinal implant poses difficult engineering challenges due to the size of the intraocular cavity and the delicate retina. Not only does it have to be biocompatible in terms of cytotoxicity and degradation, but it also has to be structurally biocompatible, with regard to smooth edges and high conformability; basically mimicking the biological tissue. This is vital to minimize stress and prevent physical damage to the retina. Also, the device must be robust to withstand the forces imposed on it during fabrication and implantation. In order to meet these biocompatibility needs, the use of non-conventional microfabrication materials such as silicone is required. This mandates the enhancement of currently available polymer-based fabrication techniques and the development of new microfabrication methods. Through an iterative process, devices

  8. An Antireflective Nanostructure Array Fabricated by Nanosilver Colloidal Lithography on a Silicon Substrate

    Directory of Open Access Journals (Sweden)

    Park Seong-Je

    2010-01-01

    Full Text Available Abstract An alternative method is presented for fabricating an antireflective nanostructure array using nanosilver colloidal lithography. Spin coating was used to produce the multilayered silver nanoparticles, which grew by self-assembly and were transformed into randomly distributed nanosilver islands through the thermodynamic action of dewetting and Oswald ripening. The average size and coverage rate of the islands increased with concentration in the range of 50–90 nm and 40–65%, respectively. The nanosilver islands were critically affected by concentration and spin speed. The effects of these two parameters were investigated, after etching and wet removal of nanosilver residues. The reflection nearly disappeared in the ultraviolet wavelength range and was 17% of the reflection of a bare silicon wafer in the visible range.

  9. Microstructure and blue photoluminescence enhancement of silicon nanoporous pillar array embedded in ferroelectric barium strontium titanate

    International Nuclear Information System (INIS)

    A silicon nanoporous pillar array (Si-NPA) with micrometer/nanometer hierarchical structure was fabricated by hydrothermal etching, followed by spin-coating barium strontium titanate (BST) on Si-NPA substrate. The photoluminescence (PL) spectra of the Si-NPA and BST/Si-NPA thin film were investigated. The emission band of freshly prepared Si-NPA located at ∼630 nm, and a blueshift at ∼425 nm as well as degradation in intensity after annealing at 600 deg. C for 1 h was observed, which might be explained by a quantum confinement effect model. BST ferroelectric material provided a static-electric field and induced the excited carriers in Si-NPA to migrate toward the opposite direction and recombine in an interfacial oxide layer. Therefore, BST enhanced blue emission of Si-NPA as well as passivated Si-NPA

  10. Photodetection and transport properties of surface capped silicon nanowires arrays with polyacrylic acid

    Directory of Open Access Journals (Sweden)

    Kamran Rasool

    2013-08-01

    Full Text Available Efficient hybrid photodetector consisting of silicon nanowires (SiNWs (∼40 μm capped with Polyacrylic Acid (PAA is demonstrated. Highly diluted PAA with deionized (DI water was spun directly on vertical SiNW arrays prepared by metal assisted electroless chemical etching (MACE technique. We have observed ∼9, 4 and 9 times enhancement in responsivity, detectivity and external quantum efficiency in SiNWs/PAA hybrid device in comparison to SiNWs only device. Higher electrical current and photodetection may be due to the increment of hydrophilic content (acceptor like states on SiNWs interface. The higher photosensitivity can also be attributed to the presence of low refractive index PAA around SiNWs which causes funneling of photon energy into SiNWs. Surface roughness of SiNWs leads to immobilization of charge carriers and hence shows persistent photoconductivity.

  11. Sensitive and Selective Detection of HIV-1 RRE RNA Using Vertical Silicon Nanowire Electrode Array.

    Science.gov (United States)

    Lee, Jaehyung; Hong, Min-Ho; Han, Sanghun; Na, Jukwan; Kim, Ilsoo; Kwon, Yong-Joon; Lim, Yong-Beom; Choi, Heon-Jin

    2016-12-01

    In this study, HIV-1 Rev response element (RRE) RNA was detected via an Au-coated vertical silicon nanowire electrode array (VSNEA). The VSNEA was fabricated by combining bottom-up and top-down approaches and then immobilized by artificial peptides for the recognition of HIV-1 RRE. Differential pulse voltammetry (DPV) analysis was used to measure the electrochemical response of the peptide-immobilized VSNEA to the concentration and types of HIV-1 RRE RNA. DPV peaks showed linearity to the concentration of RNA with a detection limit down to 1.513 fM. It also showed the clear different peaks to the mutated HIV-1 RRE RNA. The high sensitivity and selectivity of VSNEA for the detection of HIV-1 RRE RNA may be attributed to the high surface-to-volume ratio and total overlap diffusion mode of ions of the one-dimensional nanowire electrodes. PMID:27448026

  12. Periodic molybdenum disc array for light trapping in amorphous silicon layer

    Science.gov (United States)

    Wang, Jiwei; Yang, Kang; Chen, Haiyan; Deng, Changkai; Li, Dongdong; Chen, Xiaoyuan; Ren, Wei

    2016-05-01

    We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO2. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.

  13. Extraordinary transmission through gain-assisted silicon-based nanohole arrays in telecommunication regimes.

    Science.gov (United States)

    Bavil, Mehdi Afshari; Deng, Qingzhong; Zhou, Zhiping

    2014-08-01

    Extraordinary gain-assisted transmission in telecommunication regimes through circular nanohole arrays drilled on a metallic film is investigated theoretically. Silicon-compatible Er-Yb silicate, which has a photoluminescence peak in the telecommunication regime, was selected for optical amplification purposes. Geometrical parameters were optimized analytically in order to present transmission resonances at telecommunication regions. The required gain value for lossless propagation was determined by considering the surface-plasmon dispersion relation. Simulation results show that the predicted gain for lossless propagation cannot completely compensate the loss. By increasing gain value, absorption becomes zero and transmission approaches unit through a laser with a pumping power of 372 mW at 1480 nm.

  14. Capacitive humidity sensing properties of carbon nanotubes grown on silicon nanoporous pillar array

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Multi-walled carbon nanotubes (CNTs) were grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition method, and the structural and capacitive humidity sensing properties of CNT/Si-NPA were studied. It was found that with the relative humidity (RH) changing from 11% to 95%, a device re-sponse of ~480% was achieved at the frequency of 50000 Hz, and a linear device response curve could be obtained by adopting longitudinal logarithmic coordinate. The response/recovery times were measured to be ~20 s and ~10 s, respectively, which indicated a rather fast response/recovery rate. The adsorption-desorption dynamic cycle experiments demonstrated the high measurement reproducibility of CNT/Si-NPA sensors. These excellent performances were attributed to the unique surface structure, morphology and chemical inertness of CNT/Si-NPA.

  15. Growth of two-dimensional arrays of uncapped gold nanoparticles on silicon substrates

    Indian Academy of Sciences (India)

    Anindya Das; Soma Das; A K Raychaudhuri

    2008-06-01

    A method of preparing large area patterned 2D arrays of uncapped gold (Au) nanoparticles has been developed. The pattern has been formed using self-assembly of uncapped Au nanoparticles. The Au nanoparticles were synthesized via toluene/water two phase systems using a reducing agent and colloidal solution of Au nanoparticles was produced. These nanoparticles have been prepared without using any kind of capping agent. Analysis by TEM showed discrete Au nanoparticles of 4 nm average diameter. AFM analysis also showed similar result. The TEM studies showed that these nanoparticles formed self-assembled coherent patterns with dimensions exceeding 500 nm. Spin coating on silicon substrate by suitably adjusting the speed can self-assemble these nanoparticles to lengths exceeding 1 m.

  16. Self-referenced silicon nitride array microring biosensor for toxin detection using glycans at visible wavelength

    Science.gov (United States)

    Ghasemi, Farshid; Eftekhar, Ali A.; Gottfried, David S.; Song, Xuezheng; Cummings, Richard D.; Adibi, Ali

    2013-02-01

    We report on application of on-chip referencing to improve the limit-of-detection (LOD) in compact silicon nitride (SiN) microring arrays. Microring resonators, fabricated by e-beam lithography and fluorine-based etching, are designed for visible wavelengths (656nm) and have a footprint of 20 x 20 μm. GM1 ganglioside is used as the specific ligand for recognition of Cholera Toxin Subunit B (CTB), with Ricinus Communis Agglutinin I (RCA I) as a negative control. Using micro-cantilever based printing less than 10 pL of glycan solution is consumed per microring. Real-time data on analyte binding is extracted from the shifts in resonance wavelengths of the microrings.

  17. Sensitive and Selective Detection of HIV-1 RRE RNA Using Vertical Silicon Nanowire Electrode Array

    Science.gov (United States)

    Lee, Jaehyung; Hong, Min-Ho; Han, Sanghun; Na, Jukwan; Kim, Ilsoo; Kwon, Yong-Joon; Lim, Yong-beom; Choi, Heon-Jin

    2016-07-01

    In this study, HIV-1 Rev response element (RRE) RNA was detected via an Au-coated vertical silicon nanowire electrode array (VSNEA). The VSNEA was fabricated by combining bottom-up and top-down approaches and then immobilized by artificial peptides for the recognition of HIV-1 RRE. Differential pulse voltammetry (DPV) analysis was used to measure the electrochemical response of the peptide-immobilized VSNEA to the concentration and types of HIV-1 RRE RNA. DPV peaks showed linearity to the concentration of RNA with a detection limit down to 1.513 fM. It also showed the clear different peaks to the mutated HIV-1 RRE RNA. The high sensitivity and selectivity of VSNEA for the detection of HIV-1 RRE RNA may be attributed to the high surface-to-volume ratio and total overlap diffusion mode of ions of the one-dimensional nanowire electrodes.

  18. Surface-enhanced Raman scattering of patterned copper nanostructure electrolessly plated on arrayed nanoporous silicon pillars

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Weifen; Shan Wenwen; Ling Hong; Wang Yusheng [Department of Mathematics and Information Science, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Cao Yanxia [College of Materials Engineering, Zhengzhou University, Zhengzhou 450052, People' s Republic of China (China); Li Xinjian, E-mail: gingerwfj@yahoo.com.c [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2010-10-20

    A new synthesized composite structure, a patterned copper/silicon nanoporous pillar array (Cu/Si-NPA) made by depositing Cu on Si-NPA using an immersion plating method, can be used as a surface-enhanced Raman scattering (SERS) substrate. Its surface component and morphology were analyzed by x-ray diffraction and field-emission scanning electron microscopy, respectively. It was found that the surface was Cu with two kinds of crystal structures: a continuous film composed of Cu nanocrystallites covering the Si-NPA, and a quasi-regular, interconnected network composed of loop-chains of Cu crystallites, with the size in the range of several tens of nanometer to 300 nm, surrounding the porous Si pillars. The composite structure is strongly SERS active using rhodamine 6G as probe molecules, which is mainly due to the patterned hierarchical Cu structure.

  19. Capacitive humidity sensing properties of carbon nanotubes grown on silicon nanoporous pillar array

    Institute of Scientific and Technical Information of China (English)

    JIANG WeiFen; XIAO ShunHua; ZHANG HuanYun; DONG YongFen; LI XinJian

    2007-01-01

    Multi-walled carbon nanotubes (CNTs) were grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition method, and the structural and capacitive humidity sensing properties of CNT/Si-NPA were studied. It was found that with the relative humidity (RH) changing from 11% to 95%, a device response of ~480% was achieved at the frequency of 50000 Hz, and a linear device response curve could be obtained by adopting longitudinal logarithmic coordinate. The response/recovery times were measured to be ~20 s and ~10 s, respectively, which indicated a rather fast response/recovery rate. The adsorption-desorption dynamic cycle experiments demonstrated the high measurement reproducibility of CNT/Si-NPA sensors. These excellent performances were attributed to the unique surface structure, morphology and chemical inertness of CNT/Si-NPA.

  20. Application of silicon zig-zag wall arrays for anodes of Li-ion batteries

    Science.gov (United States)

    Li, G. V.; Rumyantsev, A. M.; Levitskii, V. S.; Beregulin, E. V.; Zhdanov, V. V.; Terukov, E. I.; Astrova, E. V.

    2016-01-01

    Cyclic tests of anodes based on zigzag wall arrays fabricated by the electrochemical etching and post-anodization treatment of silicon have been performed. Compared with anodes based on nanowires and planar thin films, these structures have several advantages. An ex situ analysis of the morphology and structural transformations in a material subjected to cyclic lithiation was conducted by electron microscopy and micro-Raman spectroscopy. The effect of geometrical parameters and a cycling mode on the degradation rate was studied. It is shown that a significant rise in the cycle life of the anode can be obtained by the restriction of the inserted amount of lithium. The anode, subjected to galvanostatic cycling at a rate С/2.8 at a limited charge capacity of 1000 mA · h g-1, demonstrates no degradation after 1200 cycles.

  1. Photon counting pixel and array in amorphous silicon technology for large area digital medical imaging applications

    Science.gov (United States)

    Yazdandoost, Mohammad Y.; Shin, Kyung W.; Safavian, Nader; Taghibakhsh, Farhad; Karim, Karim S.

    2010-04-01

    A single photon counting Voltage Controlled Oscillator (VCO) based pixel architecture in amorphous silicon (a-Si) technology is reported for large area digital medical imaging. The VCO converts X-ray generated input charge into an output oscillating frequency signal. Experimental results for an in-house fabricated VCO circuit in a-Si technology are presented and external readout circuits to extract the image information from the VCO's frequency output are discussed. These readout circuits can be optimized to reduce the fixed pattern noise and fringing effects in an imaging array containing many such VCO pixels. Noise estimations, stability simulations and measurements for the fabricated VCO are presented. The reported architecture is particularly promising for large area photon counting applications (e.g. low dose fluoroscopy, dental computed tomography (CT)) due to its very low input referred electronic noise, high sensitivity and ease of fabrication in low cost a-Si technology.

  2. Cascaded active silicon microresonator array cross-connect circuits for WDM networks-on-chip

    Science.gov (United States)

    Poon, Andrew W.; Xu, Fang; Luo, Xianshu

    2008-02-01

    We propose a design of an optical switch on a silicon chip comprising a 5 × 5 array of cascaded waveguide-crossing-coupled microring resonator-based switches for photonic networks-on-chip applications. We adopt our recently demonstrated design of multimode-interference (MMI)-based wire waveguide crossings, instead of conventional plain waveguide crossings, for the merits of low loss and low crosstalk. The microring resonator is integrated with a lateral p-i-n diode for carrier-injection-based GHz-speed on-off switching. All 25 microring resonators are assumed to be identical within a relatively wide resonance line width. The optical circuit switch can employ a single wavelength channel or multiple wavelength channels that are spaced by the microring resonator free spectral range. We analyze the potential performance of the proposed photonic network in terms of (i) light path cross-connections loss budget, and (ii) DC on-off power consumption for establishing a light path. As a proof-of-concept, our initial experiments on cascaded passive silicon MMI-crossing-coupled microring resonators demonstrate 3.6-Gbit/s non-return-to-zero data transmissions at on- and off-resonance wavelengths.

  3. Synthesis, characterization and application of electroless metal assisted silicon nanowire arrays

    Science.gov (United States)

    Sahoo, Sumanta Kumar; Marikani, Arumugam

    2015-12-01

    Vertically aligned silicon nanowire arrays (SiNWs) have been synthesized by electroless metal deposition process. The fabricated SiNWs have an average diameter of 75 nm and 3.5-4.0 μm length, as confirmed from scanning electron microscopy. A characteristic asymmetric peak broadening at 520 cm-1 from Raman spectroscopy was obtained for the SiNWs as compared to the bulk silicon crystal due to phonon confinement. The as-prepared SiNWs exhibit good electron field-emission properties with turn-on field of about 8.26 V μm-1 at a current density of 4.9 μA cm-2. The SiNWs was functionalized by coating with a thin gold metallic film for 60 s, and then used as bio-probe for the detection of bovine serum albumin (BSA) protein molecules. From the linear sweep voltammetry analysis, the Au coated SiNWs, exhibit linear response to the BSA analyte with increase in concentration. The minimum detection limit of the protein molecule was calculated of about 1.16 μM by the as-synthesized SiNWs probe.

  4. An investigation into the fabrication and combustion performance of porous silicon nanoenergetic array chips

    Science.gov (United States)

    Wang, Shouxu; Shen, Ruiqi; Ye, Yinghua; Hu, Yan

    2012-11-01

    An investigation into the ignitions and combustions of porous silicon (PS) nanoenergetic material array chips (nECs) at different ignition voltages was performed. The PS nECs were fabricated by integrating PS nanoenergetic material (nEMs) matrices and Cr-microbridges (microigniters) on the surface of silicon substrates. The combustion of PS nECs was in ambient air. Its ignition and combustion were investigated by a testing system and an optical high-speed camera. Experimental results revealed that the combustion delay time of PS nEMs increased from 8.0 × 10-5 s to 1.1 × 10-4 s with the decrement of ignition voltages from 140 to 80 V. The scope of ignition energy ranged from 0.153 to 0.287 mJ by calculations. The reaction type was deflagration, from the analysis of the high-speed video of PS nECs. The comprehensive experimental results indicated that the combustion of PS nECs was ignited by the synergic effect of the heat and the plasma. The ignition experiments suggested that Cr-microbridges were reliable igniters to trigger the self-sustained combustion of PS nECs. The strong plume of flame emitted from the surface of PS nECs indicated that the PS nECs may be applied as micro/nano igniter chips and microthruster chips.

  5. Compositionally-graded silicon-copper helical arrays as anodes for lithium-ion batteries

    Science.gov (United States)

    Polat, Deniz B.; Keles, Ozgul; Amine, Khalil

    2016-02-01

    Restrictions in silicon based anodes have been the subject of many researches for years. As an innovative approach, we have adopted ion assisted deposition technique to glancing angle deposition method and have used compositionally-graded structuring. A unique helical shaped gradient film has been produced in which the Cu/Si atomic ratio decreases from the bottom to the top of the coating. With such a unique film (high surface area) more spaces have been created promoting mechanical integrity and reaction between active materials (silicon) with lithium ions. The highly adherent film is formed as a result of ion assisted deposition process and the gradual change in Cu/Si atomic ratio diverts stress through the helices. To compare the performance of the SiCu electrode, a pure Si film is deposited in the same experimental condition. Galvanostatic test results show that although the film with pure Si helices fails after 30th cycles, the compositionally graded anode exhibits a capacity of 1228 mAh g-1 at the 100th cycles with 99.5% coulombic efficiencies when cycled at 100 mA g-1, and delivers 815 mAh g-1 when cycled with a rate of 400 mA g-1.

  6. Simple, Fast, and Cost-Effective Fabrication of Wafer-Scale Nanohole Arrays on Silicon for Antireflection

    Directory of Open Access Journals (Sweden)

    Di Di

    2014-01-01

    Full Text Available A simple, fast, and cost-effective method was developed in this paper for the high-throughput fabrication of nanohole arrays on silicon (Si, which is utilized for antireflection. Wafer-scale polystyrene (PS monolayer colloidal crystal was developed as templates by spin-coating method. Metallic shadow mask was prepared by lifting off the oxygen etched PS beads from the deposited chromium film. Nanohole arrays were fabricated by Si dry etching. A series of nanohole arrays were fabricated with the similar diameter but with different depth. It is found that the maximum depth of the Si-hole was determined by the diameter of the Cr-mask. The antireflection ability of these Si-hole arrays was investigated. The results show that the reflection decreases with the depth of the Si-hole. The deepest Si-hole arrays show the best antireflection ability (reflection 600 nm, which was about 28 percent of the nonpatterned silicon wafer’s reflection. The proposed method has the potential for high-throughput fabrication of patterned Si wafer, and the low reflectivity allows the application of these wafers in crystalline silicon solar cells.

  7. Symmetric and anti-symmetric magnetic resonances in double-triangle nanoparticle arrays fabricated via angle-resolved nanosphere lithography

    Directory of Open Access Journals (Sweden)

    Jian Pan

    2011-12-01

    Full Text Available We report experimentally that for a particular high-symmetry planar periodic arrangement of metal double-triangle nanoparticle arrays fabricated via angle resolved nanosphere lithography, both anti-symmetric and symmetric magnetic resonances can be explicitly excited at off-normal incidence. Further, we demonstrate that the underlying mechanism for the formation of these two modes is a result of direct interactions with the incident electric and magnetic fields, respectively. As a consequence, with increasing the incident angle there is a relatively small blue-shift in the transmission for the electric-field induced anti-symmetric mode, while a remarkable red-shift is observed for the magnetic-field induced symmetric mode.

  8. SHARC: Silicon Highly-segmented Array for Reactions and Coulex used in conjunction with the TIGRESS {gamma}-ray spectrometer

    Energy Technology Data Exchange (ETDEWEB)

    Diget, C A; Fox, S P; Adsley, P; Fulton, B R [Department of Physics, University of York, York, YO10 5DD (United Kingdom); Smith, A [School of Physics and Astronomy, The University of Manchester, Manchester, M13 9PL (United Kingdom); Williams, S; Ball, G C; Churchman, R M; Dech, J; Valentino, D Di; Djongolov, M [TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Porter-Peden, M [Department of Physics, Colorado School of Mines, Golden, CO 80401 (United States); Achouri, L [Laboratoire de Physique Corpusculaire, IN2P3-CNRS, ISMRA et Universite de Caen, F-14050 Caen (France); Al-Falou, H; Austin, R A E [Department of Astronomy and Physics, Saint Mary' s University, Halifax, NS, B3H 3C3 (Canada); Blackmon, J C [Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803 (United States); Brown, S; Catford, W N [Department of Physics, University of Surrey, Guildford, GU2 5XH (United Kingdom); Chen, A A; Chen, J, E-mail: christian.diget@york.ac.uk [Department of Physics and Astronomy, McMaster University, Hamilton, ON, L8S 4M1 (Canada)

    2011-02-01

    The combination of {gamma}-ray spectroscopy and charged-particle spectroscopy is a powerful tool for the study of nuclear reactions with beams of nuclei far from stability. This paper presents a new silicon detector array, SHARC, the Silicon Highly-segmented Array for Reactions and Coulex. The array is used at the radioactive-ion-beam facility at TRIUMF (Canada), in conjunction with the TIGRESS {gamma}-ray spectrometer, and is built from custom Si-strip detectors utilising a fully digital readout. SHARC has more than 50% efficiency, approximately 1000-strip segmentation, angular resolutions of {Delta}{theta} {approx} 1.3 deg. and {Delta}{phi} {approx} 3.5 deg., 25-30 keV energy resolution, and thresholds of 200 keV for up to 25 MeV particles. SHARC is now complete, and the experimental program in nuclear astrophysics and nuclear structure has commenced.

  9. Development and characterisation of a silicon PIN diode array based highly sensitive portable continuous radon monitor.

    Science.gov (United States)

    Ashokkumar, P; Sahoo, B K; Raman, Anand; Mayya, Y S

    2014-03-01

    This paper discusses the development and characterisation of a portable and highly sensitive continuous radon monitor (CRM) based on an array of in-house developed silicon PIN diode detectors. The development of this system was initiated in view of the limitations of the available similar radon measurement systems with regards to low sensitivity. The system utilises a hemispherical metal chamber (1 L capacity) for active air sampling. A quantitative estimation of radon concentration is carried out through alpha spectroscopy of electro-deposited (222)Rn decay products on the detector surface. The system was successfully tested and characterised in laboratory conditions. The characterisation experiments included optimisation of sensitivity, calibration with respect to linearity and a study of the influence of humidity on its performance. The novel PIN diode array design yields a high sensitivity of 1.76 ± 0.003 counts h(-1)/(Bq m(-3)) at a relative humidity level of 10% in the sampled air, which is more than two times as high as that reported for similar commercial systems. This instrument displayed a minimum detectable activity level of 0.80 Bq m(-3). PMID:24334292

  10. Silicon Photomultiplier Research and Development Studies for the Large Size Telescope of the Cherenkov Telescope Array

    CERN Document Server

    Rando, Riccardo; Dazzi, Francesco; De Angelis, Alessandro; Dettlaff, Antonios; Dorner, Daniela; Fink, David; Fouque, Nadia; Grundner, Felix; Haberer, Werner; Hahn, Alexander; Hermel, Richard; Korpar, Samo; Mezek, Gašper Kukec; Maier, Ronald; Manea, Christian; Mariotti, Mosè; Mazin, Daniel; Mehrez, Fatima; Mirzoyan, Razmik; Podkladkin, Sergey; Reichardt, Ignasi; Rhode, Wolfgang; Rosier, Sylvie; Schultz, Cornelia; Stella, Carlo; Teshima, Masahiro; Wetteskind, Holger; Zavrtanik, Marko

    2015-01-01

    The Cherenkov Telescope Array (CTA) is the the next generation facility of imaging atmospheric Cherenkov telescopes; two sites will cover both hemispheres. CTA will reach unprecedented sensitivity, energy and angular resolution in very-high-energy gamma-ray astronomy. Each CTA array will include four Large Size Telescopes (LSTs), designed to cover the low-energy range of the CTA sensitivity ($\\sim$20 GeV to 200 GeV). In the baseline LST design, the focal-plane camera will be instrumented with 265 photodetector clusters; each will include seven photomultiplier tubes (PMTs), with an entrance window of 1.5 inches in diameter. The PMT design is based on mature and reliable technology. Recently, silicon photomultipliers (SiPMs) are emerging as a competitor. Currently, SiPMs have advantages (e.g. lower operating voltage and tolerance to high illumination levels) and disadvantages (e.g. higher capacitance and cross talk rates), but this technology is still young and rapidly evolving. SiPM technology has a strong pot...

  11. Implementing Silicon Nanoribbon Field-Effect Transistors as Arrays for Multiple Ion Detection.

    Science.gov (United States)

    Stoop, Ralph L; Wipf, Mathias; Müller, Steffen; Bedner, Kristine; Wright, Iain A; Martin, Colin J; Constable, Edwin C; Fanget, Axel; Schönenberger, Christian; Calame, Michel

    2016-01-01

    Ionic gradients play a crucial role in the physiology of the human body, ranging from metabolism in cells to muscle contractions or brain activities. To monitor these ions, inexpensive, label-free chemical sensing devices are needed. Field-effect transistors (FETs) based on silicon (Si) nanowires or nanoribbons (NRs) have a great potential as future biochemical sensors as they allow for the integration in microscopic devices at low production costs. Integrating NRs in dense arrays on a single chip expands the field of applications to implantable electrodes or multifunctional chemical sensing platforms. Ideally, such a platform is capable of detecting numerous species in a complex analyte. Here, we demonstrate the basis for simultaneous sodium and fluoride ion detection with a single sensor chip consisting of arrays of gold-coated SiNR FETs. A microfluidic system with individual channels allows modifying the NR surfaces with self-assembled monolayers of two types of ion receptors sensitive to sodium and fluoride ions. The functionalization procedure results in a differential setup having active fluoride- and sodium-sensitive NRs together with bare gold control NRs on the same chip. Comparing functionalized NRs with control NRs allows the compensation of non-specific contributions from changes in the background electrolyte concentration and reveals the response to the targeted species. PMID:27164151

  12. Development of arrays of Silicon Drift Detectors and readout ASIC for the SIDDHARTA experiment

    Science.gov (United States)

    Quaglia, R.; Schembari, F.; Bellotti, G.; Butt, A. D.; Fiorini, C.; Bombelli, L.; Giacomini, G.; Ficorella, F.; Piemonte, C.; Zorzi, N.

    2016-07-01

    This work deals with the development of new Silicon Drift Detectors (SDDs) and readout electronics for the upgrade of the SIDDHARTA experiment. The detector is based on a SDDs array organized in a 4×2 format with each SDD square shaped with 64 mm2 (8×8) active area. The total active area of the array is therefore 32×16 mm2 while the total area of the detector (including 1 mm border dead area) is 34 × 18mm2. The SIDDHARTA apparatus requires 48 of these modules that are designed and manufactured by Fondazione Bruno Kessler (FBK). The readout electronics is composed by CMOS preamplifiers (CUBEs) and by the new SFERA (SDDs Front-End Readout ASIC) circuit. SFERA is a 16-channels readout ASIC designed in a 0.35 μm CMOS technology, which features in each single readout channel a high order shaping amplifier (9th order Semi-Gaussian complex-conjugate poles) and a high efficiency pile-up rejection logic. The outputs of the channels are connected to an analog multiplexer for the external analog to digital conversion. An on-chip 12-bit SAR ADC is also included. Preliminary measurements of the detectors in the single SDD format are reported. Also measurements of low X-ray energies are reported in order to prove the possible extension to the soft X-ray range.

  13. Pulse shape discrimination using EJ-299-33 plastic scintillator coupled with a Silicon Photomultiplier array

    Science.gov (United States)

    Liao, Can; Yang, Haori

    2015-07-01

    Recent developments in organic plastic scintillators capable of pulse shape discrimination (PSD) have gained much interest. Novel photon detectors, such as Silicon Photomultipliers (SiPMs), offer numerous advantages and can be used as an alternative to conventional photo multiplier tubes (PMTs) in many applications. In this work, we evaluate the PSD performance of the EJ-299-33 plastic scintillator coupled with a SiPM array. 2D PSD plots as well as the Figure of Merit (FOM) parameters are presented to demonstrate the PSD capability of EJ-299-33 using a SiPM as the light sensor. The best FOM of 0.76 was observed with a 1.0 MeVee (MeV-electron-equivalent) energy threshold, despite the high noise level of the SiPM array. A high-speed digital oscilloscope was used to acquire data, which was then processed offline in MATLAB. A performance comparison between two different PSD algorithms was carried out. The dependence of PSD quality on the sampling rate was also evaluated, stimulated by the interest to implement this setup for handheld applications where power consumption is crucial.

  14. Quantifying the Traction Force of a Single Cell by Aligned Silicon Nanowire Array

    KAUST Repository

    Li, Zhou

    2009-10-14

    The physical behaviors of stationary cells, such as the morphology, motility, adhesion, anchorage, invasion and metastasis, are likely to be important for governing their biological characteristics. A change in the physical properties of mammalian cells could be an indication of disease. In this paper, we present a silicon-nanowire-array based technique for quantifying the mechanical behavior of single cells representing three distinct groups: normal mammalian cells, benign cells (L929), and malignant cells (HeLa). By culturing the cells on top of NW arrays, the maximum traction forces of two different tumor cells (HeLa, L929) have been measured by quantitatively analyzing the bending of the nanowires. The cancer cell exhibits a larger traction force than the normal cell by ∼20% for a HeLa cell and ∼50% for a L929 cell. The traction forces have been measured for the L929 cells and mechanocytes as a function of culture time. The relationship between cells extending area and their traction force has been investigated. Our study is likely important for studying the mechanical properties of single cells and their migration characteristics, possibly providing a new cellular level diagnostic technique. © 2009 American Chemical Society.

  15. Evaluation of Matrix9 silicon photomultiplier array for small-animal PET

    Energy Technology Data Exchange (ETDEWEB)

    Du, Junwei, E-mail: jwdu@ucdavis.edu; Schmall, Jeffrey P.; Yang, Yongfeng; Di, Kun; Roncali, Emilie; Mitchell, Gregory S. [Department of Biomedical Engineering, University of California-Davis, One Shields Avenue, Davis, California 95616 (United States); Buckley, Steve; Jackson, Carl [SensL Technologies Ltd., 6800 Airport Business Park, Cork (Ireland); Cherry, Simon R. [Department of Biomedical Engineering, University of California-Davis, One Shields Avenue, Davis, California, 95616 (United States)

    2015-02-15

    Purpose: The MatrixSL-9-30035-OEM (Matrix9) from SensL is a large-area silicon photomultiplier (SiPM) photodetector module consisting of a 3 × 3 array of 4 × 4 element SiPM arrays (total of 144 SiPM pixels) and incorporates SensL’s front-end electronics board and coincidence board. Each SiPM pixel measures 3.16 × 3.16 mm{sup 2} and the total size of the detector head is 47.8 × 46.3 mm{sup 2}. Using 8 × 8 polished LSO/LYSO arrays (pitch 1.5 mm) the performance of this detector system (SiPM array and readout electronics) was evaluated with a view for its eventual use in small-animal positron emission tomography (PET). Methods: Measurements of noise, signal, signal-to-noise ratio, energy resolution, flood histogram quality, timing resolution, and array trigger error were obtained at different bias voltages (28.0–32.5 V in 0.5 V intervals) and at different temperatures (5 °C–25 °C in 5 °C degree steps) to find the optimal operating conditions. Results: The best measured signal-to-noise ratio and flood histogram quality for 511 keV gamma photons were obtained at a bias voltage of 30.0 V and a temperature of 5 °C. The energy resolution and timing resolution under these conditions were 14.2% ± 0.1% and 4.2 ± 0.1 ns, respectively. The flood histograms show that all the crystals in the 1.5 mm pitch LSO array can be clearly identified and that smaller crystal pitches can also be resolved. Flood histogram quality was also calculated using different center of gravity based positioning algorithms. Improved and more robust results were achieved using the local 9 pixels for positioning along with an energy offset calibration. To evaluate the front-end detector readout, and multiplexing efficiency, an array trigger error metric is introduced and measured at different lower energy thresholds. Using a lower energy threshold greater than 150 keV effectively eliminates any mispositioning between SiPM arrays. Conclusions: In summary, the Matrix9 detector system

  16. Towards doubling solar harvests using wide-angle, broad-band microfluidic beam steering arrays.

    Science.gov (United States)

    DiDomenico, Leo D

    2015-11-30

    This paper introduces Microfluidic Beam Steering (MBS), which is a new technique for electronically steering light having multiple octaves of bandwidth, any polarization state and incidence from any direction of the sky without significant restrictions due to physical area, optical loss and power handling capacity. It is based on optical elements comprising both transparent solids and electronically controllable fluids to control Total Internal Reflection (TIR), refraction and/or diffraction from micro-structured surfaces within a transparent solid. A TIR-based MBS is discussed in the context of solar energy and its potential to significantly increase annual energy harvests from solar arrays situated on fixed areas like roofs. The advantages and challenges associated with analog and digital MBS systems are discussed and early-stage MBS hardware is demonstrated. Finally, an analytic model of sun-tracking is provided to formally establish the potential for MBS to increase annual solar energy harvests by approximately 45% more than conventional 0-Degree Of Freedom (0-DOF) solar arrays, 62% more than 1-DOF arrays and 233% more than 2-DOF arrays, all at 20% atmospheric aerosol scattering. PMID:26698790

  17. Optimal and Local Connectivity Between Neuron and Synapse Array in the Quantum Dot/Silicon Brain

    Science.gov (United States)

    Duong, Tuan A.; Assad, Christopher; Thakoor, Anikumar P.

    2010-01-01

    This innovation is used to connect between synapse and neuron arrays using nanowire in quantum dot and metal in CMOS (complementary metal oxide semiconductor) technology to enable the density of a brain-like connection in hardware. The hardware implementation combines three technologies: 1. Quantum dot and nanowire-based compact synaptic cell (50x50 sq nm) with inherently low parasitic capacitance (hence, low dynamic power approx.l0(exp -11) watts/synapse), 2. Neuron and learning circuits implemented in 50-nm CMOS technology, to be integrated with quantum dot and nanowire synapse, and 3. 3D stacking approach to achieve the overall numbers of high density O(10(exp 12)) synapses and O(10(exp 8)) neurons in the overall system. In a 1-sq cm of quantum dot layer sitting on a 50-nm CMOS layer, innovators were able to pack a 10(exp 6)-neuron and 10(exp 10)-synapse array; however, the constraint for the connection scheme is that each neuron will receive a non-identical 10(exp 4)-synapse set, including itself, via its efficacy of the connection. This is not a fully connected system where the 100x100 synapse array only has a 100-input data bus and 100-output data bus. Due to the data bus sharing, it poses a great challenge to have a complete connected system, and its constraint within the quantum dot and silicon wafer layer. For an effective connection scheme, there are three conditions to be met: 1. Local connection. 2. The nanowire should be connected locally, not globally from which it helps to maximize the data flow by sharing the same wire space location. 3. Each synapse can have an alternate summation line if needed (this option is doable based on the simple mask creation). The 10(exp 3)x10(exp 3)-neuron array was partitioned into a 10-block, 10(exp 2)x10(exp 3)-neuron array. This building block can be completely mapped within itself (10,000 synapses to a neuron).

  18. Influence of gallium ion beam acceleration voltage on the bend angle of amorphous silicon cantilevers

    Science.gov (United States)

    Kozeki, Takahiro; Phan, Hoang-Phuong; Viet Dao, Dzung; Inoue, Shozo; Namazu, Takahiro

    2016-06-01

    This paper describes a plastic reshaping technique for Si thin membranes by using focused ion beam (FIB) processing. FIB is used to locally pattern and implant Ga ions into the membranes. The combination of Ga ion doping and alkali wet etching enables us to fabricate nanometer-thick Ga-ion-doped amorphous Si membranes, which can be bent upward at arbitrary angle by controlling the FIB beam irradiation condition. The bending mechanism is discussed in the light of Ga ions implanted depth from the membrane surface. By using this technique, a micrometer-sized chute structure with several different angles is produced.

  19. Sidewall passivation layer thickness and composition profiles of etched silicon patterns from angle resolved x-ray photoelectron spectroscopy analysis

    Energy Technology Data Exchange (ETDEWEB)

    Haass, Moritz; Darnon, Maxime; Joubert, Olivier [CNRS/UJF-Grenoble1/CEA LTM, 17 avenue des Martyrs, 38054 Grenoble cedex 9 (France)

    2012-06-15

    In this study, we present a technique to analyze side wall passivation layers formed on silicon sidewalls after plasma processing. The thickness and chemical composition are derived from angle resolved x-ray photoelectron spectroscopy analyses. It is a non-destructive, quasi in situ method to determine profiles of the thickness and the chemical composition of passivation layers in trenches up to an aspect ratio of about 3. The performance of this technique to quantify the passivation layer thickness is compared to a standard technique using secondary electron microscopy images with respect to two different samples and is found to be at least equivalent. The possible uncertainties and limitations of this technique are discussed as well.

  20. Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

    Science.gov (United States)

    Hoenk, Michael E. (Inventor); Nikzad, Shoulch (Inventor); Jones, Todd J. (Inventor); Greer, Frank (Inventor); Carver, Alexander G. (Inventor)

    2014-01-01

    Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

  1. Phase 2 of the array automated assembly task for the low cost silicon solar array project. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Petersen, R.C.

    1980-11-01

    Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process proposed by Motorola, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work has directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The Motorola process was compared with simple electroless nickel plating in a series of parallel experiments. Results are presented. (WHK)

  2. Inorganic/organic hybrid solar cells: optimal carrier transport in vertically aligned silicon nanowire arrays

    Science.gov (United States)

    Sato, Keisuke; Dutta, Mrinal; Fukata, Naoki

    2014-05-01

    Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and post-annealing. The PCE of 9.3% is obtained by forming efficient transport pathways for photogenerated charge carriers to electrodes. Our approach is a significant contribution to design of high-performance and low-cost inorganic/organic hybrid heterojunction solar cells.Inorganic/organic hybrid radial heterojunction solar cells that combine vertically-aligned n-type silicon nanowires (SiNWs) with poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) have great potential for replacing commercial Si solar cells. The chief advantage of such solar cells is that they exhibit higher absorbance for a given thickness than commercial Si solar cells, due to incident light-trapping within the NW arrays, thus enabling lower-cost solar cell production. We report herein on the effects of NW length, annealing and surface electrode on the device performance of SiNW/PEDOT:PSS hybrid radial heterojunction solar cells. The power conversion efficiency (PCE) of the obtained SiNW/PEDOT:PSS hybrid solar cells can be optimized by tuning the thickness of the surface electrode, and the etching conditions during NW formation and

  3. Silicon PIN diode hybrid arrays for charged particle detection: Building blocks for vertex detectors at the SSC

    Energy Technology Data Exchange (ETDEWEB)

    Kramer, G.; Gaalema, S.; Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.

    1989-05-01

    Two-dimensional arrays of solid state detectors have long been used in visible and infrared systems. Hybrid arrays with separately optimized detector and readout substrates have been extensively developed for infrared sensors. The characteristics and use of these infrared readout chips with silicon PIN diode arrays produced by MICRON SEMICONDUCTOR for detecting high-energy particles are reported. Some of these arrays have been produced in formats as large as 512 /times/ 512 pixels; others have been radiation hardened to total dose levels beyond 1 Mrad. Data generation rates of 380 megasamples/second have been achieved. Analog and digital signal transmission and processing techniques have also been developed to accept and reduce these high data rates. 9 refs., 15 figs., 2 tabs.

  4. Characterization of a submillimeter high-angular-resolution camera with a monolithic silicon bolometer array for the Caltech Submillimeter Observatory

    OpenAIRE

    Wang, Nina; Hunter, T. R.; Benford, D. J.; Serabyn, E.; Lis, D.C.; Phillips, T. G.; Moseley, S. H.; Bpyce, K.; Szymkowiak, A.; C. Allen; Mott, B.; Gygax, J.

    1996-01-01

    We constructed a 24-pixel bolometer camera operating in the 350- and 450-µm atmospheric windows for the Caltech Submillimeter Observatory (CSO). This instrument uses a monolithic silicon bolometer array that is cooled to approximately 300 mK by a single-shot 3 He refrigerator. First-stage amplification is provided by field-effect transistors at approximately 130 K. The sky is imaged onto the bolometer array by means of several mirrors outside the Dewar and a cold off-axis elliptical mirror in...

  5. Silicon-Based Antenna-Coupled Polarization-Sensitive Millimeter-Wave Bolometer Arrays for Cosmic Microwave Background Instruments

    CERN Document Server

    Rostem, Karwan; Appel, John W; Bennett, Charles L; Brown, Ari; Chang, Meng-Ping; Chuss, David T; Colazo, Felipe A; Costen, Nick; Denis, Kevin L; Essinger-Hileman, Tom; Hu, Ron; Marriage, Tobias A; Moseley, Samuel H; Stevenson, Thomas R; U-Yen, Kongpop; Wollack, Edward J; Xu, Zhilei

    2016-01-01

    We describe feedhorn-coupled polarization-sensitive detector arrays that utilize monocrystalline silicon as the dielectric substrate material. Monocrystalline silicon has a low-loss tangent and repeatable dielectric constant, characteristics that are critical for realizing efficient and uniform superconducting microwave circuits. An additional advantage of this material is its low specific heat. In a detector pixel, two Transition-Edge Sensor (TES) bolometers are antenna-coupled to in-band radiation via a symmetric planar orthomode transducer (OMT). Each orthogonal linear polarization is coupled to a separate superconducting microstrip transmission line circuit. On-chip filtering is employed to both reject out-of-band radiation from the upper band edge to the gap frequency of the niobium superconductor, and to flexibly define the bandwidth for each TES to meet the requirements of the application. The microwave circuit is compatible with multi-chroic operation. Metalized silicon platelets are used to define th...

  6. Carbon-coated silicon nanotube arrays on carbon cloth as a hybrid anode for lithium-ion batteries

    Science.gov (United States)

    Wang, Wei; Gu, Lin; Qian, Haolei; Zhao, Ming; Ding, Xi; Peng, Xinsheng; Sha, Jian; Wang, Yewu

    2016-03-01

    Silicon hollow nanostructure has been considered as one of the most promising material for commercial application in lithium-ion batteries due to its significant improvement of cycling stability. The fabricated hybrid structures, carbon-coated silicon nanotube arrays on carbon cloth substrate, with a high surface area and short electron collection pathway have been directly used as anode electrodes without any additional binder. The electrodes exhibit high capacity, excellent rate capability and good cycling stability. The discharge capacity of the hybrid electrode (the deposition time of silicon shell: 5 min) keeps stable, and after 100 cycles, the discharge capacities still remain 3654 mAh g-1 at the rate of 0.5 C.

  7. Structural and Electrochemical Investigation during the First Charging Cycles of Silicon Microwire Array Anodes for High Capacity Lithium Ion Batteries

    OpenAIRE

    Helmut Föll; Jürgen Carstensen; Enrique Quiroga-González

    2013-01-01

    Silicon microwire arrays embedded in Cu present exceptional performance as anode material in Li ion batteries. The processes occurring during the first charging cycles of batteries with this anode are essential for good performance. This paper sheds light on the electrochemical and structural properties of the anodes during the first charging cycles. Scanning Electron Microscopy, X-ray diffractommetry, and fast Fourier transformation impedance spectroscopy are used for the characterization. I...

  8. Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array

    Science.gov (United States)

    Wang, Xiao-Bo; Li, Yong; Yan, Ling-Ling; Li, Xin-Jian

    2015-10-01

    A GaN/Si nanoheterojunction is prepared through growing GaN nanocrystallites (nc-GaN) on a silicon nanoporous pillar array (Si-NPA) by a chemical vapor deposition (CVD) technique at a relatively low temperature. The average size of nc-GaN is determined to be ˜10 nm. The spectral measurements disclose that the photoluminescence (PL) from GaN/Si-NPA is composed of an ultraviolet (UV) band and a broad band spanned from UV to red region, with the feature that the latter band is similar to that of electroluminescence (EL). The electron transition from the energy levels of conduction band and, or, shallow donors to that of deep acceptors of GaN is indicated to be responsible for both the broad-band PL and the EL luminescence. A study of the I-V characteristic shows that at a low forward bias, the current across the heterojunction is contact-limited while at a high forward bias it is bulk-limited, which follows the thermionic emission model and space-charge-limited current (SCLC) model, respectively. The bandgap offset analysis indicates that the carrier transport is dominated by electron injection from n-GaN into the p-Si-NPA, and the EL starts to appear only when holes begin to be injected from Si-NPA into GaN with biases higher than a threshold voltage. Project supported by the National Natural Science Foundation of China (Grant No. 61176044).

  9. Gain compensation technique by bias correction in arrays of Silicon Photomultipliers using fully differential fast shaper

    Science.gov (United States)

    Baszczyk, M.; Dorosz, P.; Glab, S.; Kucewicz, W.; Mik, L.; Sapor, M.

    2016-07-01

    Proposed algorithm compensates the gain by changing the bias voltage of Silicon Photomultipliers (SiPM). The signal from SiPM is amplified in fully differential preamplifier then is formed in time by the fully differential fast shaper. The compensation method was tested with four channels common cathode multi-pixel photon counter from Hamamatsu. The measurement system requires only one high voltage power supply. The polarization voltage is adjusted individually in each channel indirectly by tuning the output common mode voltage (VOCM) of fully differential amplifier. The changes of VOCM affect the input voltage through the feedback network. Actual gain of the SiPM is calculated by measuring the mean amplitude of the signal resulting from detection of single photoelectron. The VOCM is adjusted by DAC so as to reach the desired value of gain by each channel individually. The advantage of the algorithm is the possibility to set the bias of each SiPM in the array independently so they all could operate in very similar conditions (have similar gain and dark count rate). The algorithm can compensate the variations of gain of SiPM by using thermally generated pulses. There is no need to use additional current to voltage conversion which could introduce extra noises.

  10. Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array

    Institute of Scientific and Technical Information of China (English)

    王小波; 李勇; 闫玲玲; 李新建

    2015-01-01

    A GaN/Si nanoheterojunction is prepared through growing GaN nanocrystallites (nc-GaN) on a silicon nanoporous pillar array (Si-NPA) by a chemical vapor deposition (CVD) technique at a relatively low temperature. The average size of nc-GaN is determined to be∼10 nm. The spectral measurements disclose that the photoluminescence (PL) from GaN/Si-NPA is composed of an ultraviolet (UV) band and a broad band spanned from UV to red region, with the feature that the latter band is similar to that of electroluminescence (EL). The electron transition from the energy levels of conduction band and, or, shallow donors to that of deep acceptors of GaN is indicated to be responsible for both the broad-band PL and the EL luminescence. A study of the I–V characteristic shows that at a low forward bias, the current across the heterojunction is contact-limited while at a high forward bias it is bulk-limited, which follows the thermionic emission model and space-charge-limited current (SCLC) model, respectively. The bandgap offset analysis indicates that the carrier transport is dominated by electron injection from n-GaN into the p-Si-NPA, and the EL starts to appear only when holes begin to be injected from Si-NPA into GaN with biases higher than a threshold voltage.

  11. Desarrollo de un circuito integrado de múltiples canales para Silicon fotomultiplicador arrays lectura

    CERN Document Server

    Comerma i Montells, Albert

    2013-10-31

    The aim of this thesis is to present a solution for the readout of Silicon Photo-Multipliers (SiPMs) arrays improving currently implemented systems. Using as a starting point previous designs with similar objectives a novel current mode input stage has been designed and tested. To start with the design a valid model has been used to generate realistic output from the SiPMs depending on light input. Design has been performed in first place focusing in general applications for medical imaging Positron Emission Tomography (PET) and then using the same topology for a more constrained design in particle detectors (upgrade of Tracker detector at LHCb experiment). A 16 channel ASIC for PET applications including the novel input stage has demonstrated an excellent timing measurement with good energy resolution measurement and pile-up detection. This document starts with the analysis of the requirements needed to fit such a system. Followed by a detailed description of the input stage and analog processing. Signal is ...

  12. Fabrication of microlens array on silicon surface using electrochemical wet stamping technique

    Science.gov (United States)

    Lai, Lei-Jie; Zhou, Hang; Zhu, Li-Min

    2016-02-01

    This paper focuses on the fabrication of microlens array (MLA) on silicon surface by taking advantage of a novel micromachining approach, the electrochemical we stamping (E-WETS). The E-WETS allows the direct imprinting of MLA on an agarose stamp into the substrate through a selective anodic dissolution process. The pre-patterned agarose stamp can direct and supply the solution preferentially on the contact area between the agarose stamp and the substrate, to which the electrochemical reaction is confined. The anodic potential vs. saturated calomel electrode is optimized and 1.5 V is chosen as the optimum value for the electrochemical polishing of p-Si. A refractive MLA on a PMMA mold is successfully transferred onto the p-Si surface. The machining deviations of the fabricated MLA from those on the mold are 0.44% in diameter and 2.1% in height respectively, and the machining rate in HF is around 1.1 μm/h. The surface roughness of the fabricated MLA is less than 12 nm owing to the electrochemical polishing process. The results demonstrate that E-WETS is a promising approach to fabricate MLA on p-Si surface with high accuracy and efficiency.

  13. 硅纳米线阵列的制备及其光电应用%Preparation and Optoelectronic Applications of Silicon Nanowire Arrays

    Institute of Scientific and Technical Information of China (English)

    刘莉; 曹阳; 贺军辉; 杨巧文

    2013-01-01

    Recent years, silicon nanowire arrays have aroused extensive attention among scientists and engineers due to their unique characteristics such as excellent antireflection in both wide wavelength range and wide incidence angle and their great potentials in the field of optoelectronics. This paper reviews the latest research progress in preparation of silicon nanowire arrays and their optoelectronic applications. The preparation methods that have been verified are classified mainly into two categories, i. e. , " bottom-up " and" top-down", including template-assisted chemical vapor deposition, chemical vapor deposition combined with Langmuir-Blodgett technology and metal-catalyzed chemical etching. The third method is at the present time the most frequently used as well as the simplest one, and is discussed in detail in respect of the etching steps, mechanism and controlling parameters. As for the optoelectronic applications of silicon nanowire arrays, this review mainly describes those in photodetectors, conventional solar cells, photoelectrochemical solar cells, photocatalytic water splitting, and photocatalytic degradation of organic pollutants. Finally, an outlook is made about how to improve the photoelectrical conversion efficiency and avoid the corrosion of silicon nanowire arrays, which indicates that surface modification and resulting properties may be a future research direction for silicon nanowire arrays research.%近年来,硅纳米线阵列在宽波段、宽入射角范围内优异的减反射性能及其在光电领域的巨大应用前景引起了相关研究者的广泛关注.本文综述了国内外硅纳米线阵列的制备及其在光电应用方面的最新研究进展.关于硅纳米线阵列的制备方法,主要从“自下而上”和“自上而下”两大类出发,分别阐述了模板辅助的化学气相沉积法、化学气相沉积结合Langmuir-Blodgett技术法和金属催化化学刻蚀法,其中重点介绍了目前使用最为

  14. Enhanced reflection from inverse tapered nanocone arrays

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Xiang-Tian; Dai, Qing, E-mail: daiq@nanoctr.cn [National Center for Nanoscience and Technology, Beijing 100190 (China); Butt, Haider, E-mail: h.butt@bham.ac.uk; Deng, Sunan [School of Mechanical Engineering, University of Birmingham, Edgbaston, Birmingham B15 2TT (United Kingdom); Yetisen, Ali K.; Cruz Vasconcellos, Fernando da [Department of Chemical Engineering and Biotechnology, University of Cambridge, Tennis Court Road, Cambridge CB2 1QT (United Kingdom); Kangwanwatana, Chuan; Montelongo, Yunuen; Qasim, Malik M.; Wilkinson, Timothy D. [Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom)

    2014-08-04

    We computationally and experimentally demonstrate enhanced reflection effects displayed by silicon-based inverted nanocone arrays. A 3D finite element model is used to characterize the optical properties of the nanocone arrays with respect to the change in polarization and incident angles. The nanocone arrays are fabricated by e-beam lithography in hexagonal and triangular geometries with a lattice constant of 300 nm. The fabricated devices show a two-fold increase in reflection compared with bare silicon surface, as well as a strong diffraction within the visible and near-infrared spectra. The nanocone arrays may find a variety of applications from optical devices to energy conservation technologies.

  15. Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

    Science.gov (United States)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

    2014-03-01

    The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

  16. An Array of One-Dimensional Porous Silicon Photonic Crystal Reflector Islands for a Far-Infrared Image Detector

    Institute of Scientific and Technical Information of China (English)

    MIAO Feng-Juan; ZHANG Jie; XU Shao-Hui; WANG Lian-Wei; CHU Jun-Hao; CAO Zhi-Shen; ZHAN Peng; WANG Zhen-Lin

    2009-01-01

    @@ With the aid of photolithography, an array of one-dimensional porous silicon photonic crystal reflector islands for a far infrared image detector ranging from 10μm to 14μm is successfully fabricated. Silicon nitride formed by low pressure chemical vapor deposition (LPCVD) was used as the masking layer for the island array formation. After etching, the microstructures were examined by a scanning electron microscope and the optical properties were studied by Fourier transform infrared spectroscopy, the result indicates that the multilayer structure could be obtained in the perpendicular direction via periodically alternative etching current in each pre-patteru. At the same time, the island array has a well-proportioned lateral etching effect, which is very useful for the thermal isolation in lateral orientation of the application in devices. It is concluded that regardless of the absorption of the deposition layer on the substrate, the localized photonic crystalline islands have higher reflectivity. The designed islands structure not only prevents the cracking of the porous silicon layers but is also useful for the application in the cold part for the sensor devices and the interconnection of each pixel.

  17. Three-Dimensional Metal-Oxide Nanohelix Arrays Fabricated by Oblique Angle Deposition: Fabrication, Properties, and Applications

    Science.gov (United States)

    Kwon, Hyunah; Lee, Seung Hee; Kim, Jong Kyu

    2015-09-01

    Three-dimensional (3D) nanostructured thin films have attracted great attention due to their novel physical, optical, and chemical properties, providing tremendous possibilities for future multifunctional systems and for exploring new physical phenomena. Among various techniques to fabricate 3D nanostructures, oblique angle deposition (OAD) is a very promising method for producing arrays of a variety of 3D nanostructures with excellent controllability, reproducibility, low cost, and compatibility with modern micro-electronic processes. This article presents a comprehensive overview of the principle of OAD, and unique structural and optical properties of OAD-fabricated thin films including excellent crystallinity, accurate tunability of refractive indices, and strong light scattering effect which can be utilized to remarkably enhance performances of various systems such as antireflection coatings, optical filters, photoelectrodes for solar-energy-harvesting cells, and sensing layers for various sensors.

  18. Relaxing the electrostatic screening effect by patterning vertically-aligned silicon nanowire arrays into bundles for field emission application

    Energy Technology Data Exchange (ETDEWEB)

    Hung, Yung-Jr, E-mail: yungjrhung@gmail.com [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Department of Photonics, National Sun Yat-sen University, No. 70, Lienhai Rd., Kaohsiung 80424, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, San-Liang [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Beng, Looi Choon [Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Chang, Hsuan-Chen [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Huang, Yung-Jui [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, Kuei-Yi; Huang, Ying-Sheng [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China)

    2014-04-01

    Top-down fabrication strategies are proposed and demonstrated to realize arrays of vertically-aligned silicon nanowire bundles and bundle arrays of carbon nanotube–silicon nanowire (CNT–SiNW) heterojunctions, aiming for releasing the electrostatic screening effect and improving the field emission characteristics. The trade-off between the reduction in the electrostatic screening effect and the decrease of emission sites leads to an optimal SiNW bundle arrangement which enables the lowest turn-on electric field of 1.4 V/μm and highest emission current density of 191 μA/cm{sup 2} among all testing SiNW samples. Benefiting from the superior thermal and electrical properties of CNTs and the flexible patterning technologies available for SiNWs, bundle arrays of CNT–SiNW heterojunctions show improved and highly-uniform field emission with a lower turn-on electric field of 0.9 V/μm and higher emission current density of 5.86 mA/cm{sup 2}. The application of these materials and their corresponding fabrication approaches is not limited to the field emission but can be used for a variety of emerging fields like nanoelectronics, lithium-ion batteries, and solar cells. - Highlights: • Aligned silicon nanowire (SiNW) bundle arrays are realized with top-down methods. • Growing carbon nanotubes atop SiNW bundle arrays enable uniform field emission. • A turn-on field of 0.9 V/μm and an emission current of > 5 mA/cm{sup 2} are achieved.

  19. Development of a Thick-film Silicon Ribbon Growth Technique for Application to Large-area Solar Cells and Arrays

    Science.gov (United States)

    Berman, P. A.

    1973-01-01

    A new technique is described for growth of large-area silicon ribbons. This technique is an edge-defined, film-fed growth process by which single crystals can be grown having a shape controlled by the outside dimensions of a shaping die, growth taking place from an extremely thin film of liquid fed by capillary action from a crucible below. The material from which the die is fabricated is very critical to the process. The die must be wet by the silicon, but adverse impurities must not be introduced into the silicon, and the die must not become degraded by the molten silicon. A breakthrough in die fabrication that has allowed the growth of silicon ribbons having dimensions of 1 cm by 30 cm with a thickness of 0.7 mm is described. The implications of this significant advancement with respect to development of photovoltaic solar arrays for wide-scale terrestrial solar-to-electric energy conversion systems are discussed.

  20. Evaluation of selected chemical processes for production of low-cost silicon phase 2. silicon material task, low-cost silicon solar array project

    Science.gov (United States)

    Blocher, J. M., Jr.; Browning, M. F.; Rose, E. E.; Thompson, W. B.; Schmitt, W. A.; Fippin, J. S.; Kidd, R. W.; Liu, C. Y.; Kerbler, P. S.; Ackley, W. R.

    1978-01-01

    Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.

  1. Performance of a SensL-30035-16P Silicon Photomultiplier array at liquid argon temperature

    CERN Document Server

    Catalanotti, S; Covone, G; Incecco, M D; Fiorillo, G; Korga, G; Rossi, B; Walker, S

    2015-01-01

    Next generation multi-ton scale noble liquid experiments have the unique opportunity to discover dark matter particles at the TeV scale, reaching the sensitivity of 10^-48 cm2 in the WIMP nucleon scattering cross-section. A prerequisite will be the reduction of radiogenic background sources to negligible levels. This is only possible if ultra pure high efficiency photosensors are available for the scintillation light readout. Current experiments (e.g. Xenon, LUX, Darkside, ArDM) use cryogenic PMTs as photosensors. An attractive alternative is represented by silicon photomultiplier arrays (SiPM arrays), which show unrivalled performances in single photon detection. This paper reports on the performance of the SensL-30035-16P SiPM array and a custom made cryogenic front-end board at the liquid argon temperature.

  2. Hollow silicon microneedle array based trans-epidermal antiemetic patch for efficient management of chemotherapy induced nausea and vomiting

    Science.gov (United States)

    Kharbikar, Bhushan N.; Kumar S., Harish; Kr., Sindhu; Srivastava, Rohit

    2015-12-01

    Chemotherapy Induced Nausea and Vomiting (CINV) is a serious health concern in the treatment of cancer patients. Conventional routes for administering anti-emetics (i.e. oral and parenteral) have several drawbacks such as painful injections, poor patient compliance, dependence on skilled personnel, non-affordability to majority of population (parenteral), lack of programmability and suboptimal bioavailability (oral). Hence, we have developed a trans-epidermal antiemetic drug delivery patch using out-of-plane hollow silicon microneedle array. Microneedles are pointed micron-scale structures that pierce the epidermal layer of skin to reach dermal blood vessels and can directly release the drug in their vicinity. They are painless by virtue of avoiding significant contact with dermal sensory nerve endings. This alternate approach gives same pharmacodynamic effects as par- enteral route at a sparse drug-dose requirement, hence negligible side-effects and improved patient compliance. Microneedle design attributes were derived by systematic study of human skin anatomy, natural micron-size structures like wasp-sting and cactus-spine and multi-physics simulations. We used deep reactive ion etching with Bosch process and optimized recipe of gases to fabricate high-aspect-ratio hollow silicon microneedle array. Finally, microneedle array and polydimethylsiloxane drug reservoir were assembled to make finished anti-emetic patch. We assessed microneedles mechanical stability, physico-chemical properties and performed in-vitro, ex- vivo and in-vivo studies. These studies established functional efficacy of the device in trans-epidermal delivery of anti-emetics, its programmability, ease of use and biosafety. Thus, out-of-plane hollow silicon microneedle array trans-epidermal antiemetic patch is a promising strategy for painless and effective management of CINV at low cost in mainstream healthcare.

  3. Fabrication of CoFe2O4 ferrite nanowire arrays in porous silicon template and their local magnetic properties

    Science.gov (United States)

    Hui, Zheng; Man-Gui, Han; Long-Jiang, Deng

    2016-02-01

    CoFe2O4 ferrite nanowire arrays are fabricated in porous silicon templates. The porous silicon templates are prepared via metal-assisted chemical etching with gold (Au) nanoparticles as the catalyst. Subsequently, CoFe2O4 ferrite nanowires are successfully synthesized into porous silicon templates by the sol-gel method. The magnetic hysteresis loop of nanowire array shows an isotropic feature of magnetic properties. The coercivity and squareness ratio (Mr/Ms) of ensemble nanowires are found to be 630 Oe (1 Oe, = 79.5775 A·m-1 and 0.4 respectively. However, the first-order reversal curve (FORC) is adopted to reveal the probability density function of local magnetostatic properties (i.e., interwire interaction field and coercivity). The FORC diagram shows an obvious distribution feature for interaction field and coercivity. The local coercivity with a value of about 1000 Oe is found to have the highest probability. Project supported by the National Natural Science Foundation of China (Grant No. 61271039), the Scientific Projects of Sichuan Province, China (Grant No. 2015HH0016), and the Natural Science Foundations of Zhejiang Province, China (Grant Nos. LQ12E02001 and Y107255).

  4. Reduction of Cr(VI) to Cr(III) using silicon nanowire arrays under visible light irradiation.

    Science.gov (United States)

    Fellahi, Ouarda; Barras, Alexandre; Pan, Guo-Hui; Coffinier, Yannick; Hadjersi, Toufik; Maamache, Mustapha; Szunerits, Sabine; Boukherroub, Rabah

    2016-03-01

    We report an efficient visible light-induced reduction of hexavalent chromium Cr(VI) to trivalent Cr(III) by direct illumination of an aqueous solution of potassium dichromate (K2Cr2O7) in the presence of hydrogenated silicon nanowires (H-SiNWs) or silicon nanowires decorated with copper nanoparticles (Cu NPs-SiNWs) as photocatalyst. The SiNW arrays investigated in this study were prepared by chemical etching of crystalline silicon in HF/AgNO3 aqueous solution. The Cu NPs were deposited on SiNW arrays via electroless deposition technique. Visible light irradiation of an aqueous solution of K2Cr2O7 (10(-4)M) in presence of H-SiNWs showed that these substrates were not efficient for Cr(VI) reduction. The reduction efficiency achieved was less than 10% after 120 min irradiation at λ>420 nm. Addition of organic acids such as citric or adipic acid in the solution accelerated Cr(VI) reduction in a concentration-dependent manner. Interestingly, Cu NPs-SiNWs was found to be a very efficient interface for the reduction of Cr(VI) to Cr(III) in absence of organic acids. Almost a full reduction of Cr(VI) was achieved by direct visible light irradiation for 140 min using this photocatalyst.

  5. Large-Area, UV-Optimized, Back-Illuminated Silicon Photomultiplier Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Existing photocathode-based technologies for visible and UV instruments lack sensitivity, are bulky, and have limited reliability. Solid-state silicon...

  6. Hybrid solar cells with conducting polymers and vertically aligned silicon nanowire arrays: The effect of silicon conductivity

    Energy Technology Data Exchange (ETDEWEB)

    Woo, Sungho, E-mail: shwoo@dgist.ac.kr [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Hoon Jeong, Jae [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of); Kun Lyu, Hong; Jeong, Seonju; Hyoung Sim, Jun; Hyun Kim, Wook [Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873 (Korea, Republic of); Soo Han, Yoon [Department of Advanced Energy Material Science and Engineering, Catholic University of Daegu, Gyeongbuk 712-702 (Korea, Republic of); Kim, Youngkyoo, E-mail: ykimm@knu.ac.kr [Organic Nanoelectronics Laboratory, Department of Chemical Engineering, Kyungpook National University, Daegu 702-701 (Korea, Republic of)

    2012-08-01

    Organic/inorganic hybrid solar cells, based on vertically aligned n-type silicon nanowires (n-Si NWs) and p-type conducting polymers (PEDOT:PSS), were investigated as a function of Si conductivity. The n-Si NWs were easily prepared from the n-Si wafer by employing a silver nanodot-mediated micro-electrochemical redox reaction. This investigation shows that the photocurrent-to-voltage characteristics of the n-Si NW/PEDOT:PSS cells clearly exhibit a stable rectifying diode behavior. The increase in current density and fill factor using high conductive silicon is attributed to an improved charge transport towards the electrodes achieved by lowering the device's series resistance. Our results also show that the surface area of the nanowire that can form heterojunction domains significantly influences the device performance.

  7. Phase 2 of the automated array assembly task of the Low-Cost Silicon Solar Array Project. Annual report

    Energy Technology Data Exchange (ETDEWEB)

    Coleman, M.G.; Grenon, L.P.; Pastirik, E.M.; Pryor, R.A.; Sparks, T.G.

    1978-11-01

    This report presents the results of investigations and analyses of an advanced process sequence for manufacturing high efficiency solar cells and modules in a cost-effective manner. The entire process sequence is presented and discussed step by step. Emphasis is on process simplicity and minimizing consumed materials. The process sequence incorporates texture etching, plasma processes for damage removal and patterning, ion implantation, low pressure silicon nitride deposition, and plated metal. A reliable module design is presented. Specific process step developments are presnted. Further, a detailed cost analysis has been performed to indicate future areas of fruitful cost reduction effort. Finally, recommendations for advanced investigations are presented.

  8. Silicon Detector Arrays with Absolute Quantum Efficiency over 50% in the Far Ultraviolet for Single Photon Counting Applications

    CERN Document Server

    Nikzad, Shouleh; Greer, Frank; Jones, Todd; Jacquot, Blake; Monacos, Steve; Blacksberg, J; Hamden, Erika; Schiminovich, David; Martin, Chris; Morrissey, Patrick

    2011-01-01

    We have used Molecular Beam Epitaxy (MBE)-based delta doping technology to demonstrate near 100% internal quantum efficiency (QE) on silicon electron-multiplied Charge Coupled Devices (EMCCDs) for single photon counting detection applications. Furthermore, we have used precision techniques for depositing antireflection (AR) coatings by employing Atomic Layer Deposition (ALD) and demonstrated over 50% external QE in the far and near-ultraviolet in megapixel arrays. We have demonstrated that other device parameters such as dark current are unchanged after these processes. In this paper, we report on these results and briefly discuss the techniques and processes employed.

  9. Wide angle light collection with ultralow reflection and super scattering by silicon micro-nanostructures for thin crystalline silicon solar cell applications

    Science.gov (United States)

    Das, Sonali; Kundu, Avra; Saha, Hiranmay; Datta, Swapan K.

    2016-01-01

    Conventional c-Si solar cells employ micron-sized pyramids for achieving reduced reflection (˜10%) and enhanced light trapping by multiple bounces (maximum 3) of the incident light. Alternatively, bio-mimetic, moth-eye sub-wavelength nanostructures offer broadband antireflection properties (˜3%) suitable for solar cell applications in the optical regime. However, such structures do not provide any advantage in the charge carrier extraction process as radial junctions cannot be formed in such sub-wavelength dimensions and they have high surface area causing increased charged carrier recombination. The choice of the geometry for achieving optimum photon-electron harvesting for solar applications is therefore very critical. Cross-fertilization of the conventional solar cell light-trapping techniques and the sub-wavelength nanostructures results in unique micro-nanostructures (structures having sub-wavelength dimensions as well as dimensions of the order of few microns) which provide advanced light management capabilities along with the ability of realizing radial junctions. It is seen that an ultralow reflection along with wide angle light collection is obtained which enables such structures to overcome the morning, evening and winter light losses in solar cells. Further, super-scattering in the structures offer enhanced light trapping not only in the structure itself but also in the substrate housing the structure. Ray and wave optics have been used to understand the optical benefits of the structures. It is seen that the aspect ratio of the structures plays the most significant role for achieving such light management capabilities, and efficiencies as high as 12% can be attained. Experiments have been carried out to fabricate a unique micro-nanomaze-like structure instead of a periodic array of micro-nanostructures with the help of nanosphere lithography and the MacEtch technique. It is seen that randomized micro-nanomaze geometry offers very good antireflection

  10. Wide angle light collection with ultralow reflection and super scattering by silicon micro-nanostructures for thin crystalline silicon solar cell applications

    International Nuclear Information System (INIS)

    Conventional c-Si solar cells employ micron-sized pyramids for achieving reduced reflection (∼10%) and enhanced light trapping by multiple bounces (maximum 3) of the incident light. Alternatively, bio-mimetic, moth-eye sub-wavelength nanostructures offer broadband antireflection properties (∼3%) suitable for solar cell applications in the optical regime. However, such structures do not provide any advantage in the charge carrier extraction process as radial junctions cannot be formed in such sub-wavelength dimensions and they have high surface area causing increased charged carrier recombination. The choice of the geometry for achieving optimum photon–electron harvesting for solar applications is therefore very critical. Cross-fertilization of the conventional solar cell light-trapping techniques and the sub-wavelength nanostructures results in unique micro-nanostructures (structures having sub-wavelength dimensions as well as dimensions of the order of few microns) which provide advanced light management capabilities along with the ability of realizing radial junctions. It is seen that an ultralow reflection along with wide angle light collection is obtained which enables such structures to overcome the morning, evening and winter light losses in solar cells. Further, super-scattering in the structures offer enhanced light trapping not only in the structure itself but also in the substrate housing the structure. Ray and wave optics have been used to understand the optical benefits of the structures. It is seen that the aspect ratio of the structures plays the most significant role for achieving such light management capabilities, and efficiencies as high as 12% can be attained. Experiments have been carried out to fabricate a unique micro-nanomaze-like structure instead of a periodic array of micro-nanostructures with the help of nanosphere lithography and the MacEtch technique. It is seen that randomized micro-nanomaze geometry offers very good

  11. SERS detection of R6G based on a novel graphene oxide/silver nanoparticles/silicon pyramid arrays structure.

    Science.gov (United States)

    Zhang, C; Jiang, S Z; Huo, Y Y; Liu, A H; Xu, S C; Liu, X Y; Sun, Z C; Xu, Y Y; Li, Z; Man, B Y

    2015-09-21

    We present a novel surface-enhanced Raman scattering (SERS) substrate based on graphene oxide/silver nanoparticles/silicon pyramid arrays structure (GO/Ag/PSi). The SERS behaviors are discussed and compared by the detection of R6G. Based on the contrast experiments with PSi, GO/PSi, Ag/PSi and GO/AgA/PSi as SERS substrate, the perfect bio-compatibility, good homogeneity and chemical stability were confirmed. We also calculated the electric field distributions using Finite-difference time-domain (FDTD) analysis to further understand the GO/Ag/PSi structure as a perfect SERS platform. These experimental and theoretical results imply that the GO/Ag/PSi with regular pyramids array is expected to be an effective substrate for label-free sensitive SERS detections in areas of medicine, food safety and biotechnology.

  12. Growth process and mechanism of a multi-walled carbon nanotube nest deposited on a silicon nanoporous pillar array

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Weifen, E-mail: gingerwfj@yahoo.com.cn [Department of Mathematics and Information Science, North China Institute of Water Conservancy and Hydroelectric Power, No. 36 Beihuan Road, Zhengzhou 450011 (China); Jian Lv; Yang Xiaohui [Department of Mathematics and Information Science, North China Institute of Water Conservancy and Hydroelectric Power, No. 36 Beihuan Road, Zhengzhou 450011 (China); Li Xinjian [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2010-03-01

    A large scale nest array of multi-walled carbon nanotubes (NACNTs) was grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition. Through observing its macro/micromorphology and structure, ascertaining the catalyst component and its locations at different growth time by hiring field emission scanning electron microscopy, transmission electron microscopy (TEM), high-resolution TEM, and selected area electron diffraction, the growth process was deduced. Its thermal properties were also investigated by using a thermogravimetric analyzer. Our experiments demonstrated that the CNTs growth by means of root-growth mechanism at the initial growth stage, then a continuous growth process with its tip open is suggested, finally, a schematic growth model of NACNT/Si-NPA was presented.

  13. SERS activity of Au nanoparticles coated on an array of carbon nanotube nested into silicon nanoporous pillar

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Weifen, E-mail: gingerwfj@yahoo.com.cn [Department of Mathematics and Information Science, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Zhang Yanfeng [School of Computer and Information Engeering, Henan University, Kaifeng 475004 (China); Wang Yusheng; Xu Lei [Department of Mathematics and Information Science, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Li Xinjian [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2011-12-15

    A novel composite structure, Au nanoparticles coated on a nest-shaped array of carbon nanotube nested into a silicon nanoporous pillar array (Au/NACNT/Si-NPA), was fabricated for surface-enhanced Raman scattering (SERS). The morphology of the Au/NACNT/Si-NPA composite structure was characterized with the aid of scanning electron microscopy, X-ray diffraction instrumentation and Transmission electron microscopy. Compared with SERS of rhodamine 6G (R6G) adsorbed on SERS-active Au substrate reported, the SERS signals of R6G adsorbed on these gold nanoparticles were obviously improved. This was attributed to the enlarged specific surface area for adsorption of target molecules brought by the nest-shaped CNTs structure.

  14. Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

    Energy Technology Data Exchange (ETDEWEB)

    Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

    2002-07-01

    Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a {approx}10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38.

  15. Near-infrared quarter-waveplate with near-unity polarization conversion efficiency based on silicon nanowire array.

    Science.gov (United States)

    Dai, Yanmeng; Cai, Hongbing; Ding, Huaiyi; Ning, Zhen; Pan, Nan; Zhu, Hong; Shi, Qinwei; Wang, Xiaoping

    2015-04-01

    Metasurfaces made of subwavelength resonators can modify the wave front of light within the thickness much less than free space wavelength, showing great promises in integrated optics. In this paper, we theoretically show that electric and magnetic resonances supported simultaneously by a subwavelength nanowire with high refractive-index can be utilized to design metasurfaces with near-unity transmittance. Taking silicon nanowire for instance, we design numerically a near-infrared quarter-waveplate with high transmittance using a subwavelength nanowire array. The operation bandwidth of the waveplate is 0.14 μm around the center wavelength of 1.71 μm. The waveplate can convert a 45° linearly polarized incident light to circularly polarized light with conversion efficiency ranging from 94% to 98% over the operation band. The performance of quarter waveplate can in principle be tuned and improved through optimizing the parameters of nanowire arrays. Its compatibility to microelectronic technologies opens up a distinct possibility to integrate nanophotonics into the current silicon-based electronic devices.

  16. Ultra-fast Laser Synthesis of Nanopore Arrays in Silicon for Bio-molecule Separation and Detection

    Energy Technology Data Exchange (ETDEWEB)

    Tringe, J W; Ileri, N; Letant, S E; Stroeve, P; Shirk, M; Zaidi, S; Balhorn, R L; Siders, C W

    2008-02-07

    We demonstrate that interference of ultra-fast pulses of laser light can create regular patterns in thin silicon membranes that are compatible with the formation of a uniform array of nanopores. The spacing and size of these pores can be tuned by changing the laser energy, wavelength and number of ultra-short pulses. Short pulses and wavelengths ({approx}550 nm and smaller) are needed to define controllable nanoscale features in silicon. Energy must be localized in time and space to produce the etching, ablation or amorphization effects over the {approx}100 nm length scales appropriate for definition of single pores. Although in this brief study pattern uniformity was limited by laser beam quality, a complementary demonstration reported here used continuous-wave interferometric laser exposure of photoresist to show the promise of the ultra-fast approach for producing uniform pore arrays. The diameters of these interferometrically-defined features are significantly more uniform than the diameters of pores in state-of-the-art polycarbonate track etch membranes widely used for molecular separations.

  17. Near-infrared quarter-waveplate with near-unity polarization conversion efficiency based on silicon nanowire array.

    Science.gov (United States)

    Dai, Yanmeng; Cai, Hongbing; Ding, Huaiyi; Ning, Zhen; Pan, Nan; Zhu, Hong; Shi, Qinwei; Wang, Xiaoping

    2015-04-01

    Metasurfaces made of subwavelength resonators can modify the wave front of light within the thickness much less than free space wavelength, showing great promises in integrated optics. In this paper, we theoretically show that electric and magnetic resonances supported simultaneously by a subwavelength nanowire with high refractive-index can be utilized to design metasurfaces with near-unity transmittance. Taking silicon nanowire for instance, we design numerically a near-infrared quarter-waveplate with high transmittance using a subwavelength nanowire array. The operation bandwidth of the waveplate is 0.14 μm around the center wavelength of 1.71 μm. The waveplate can convert a 45° linearly polarized incident light to circularly polarized light with conversion efficiency ranging from 94% to 98% over the operation band. The performance of quarter waveplate can in principle be tuned and improved through optimizing the parameters of nanowire arrays. Its compatibility to microelectronic technologies opens up a distinct possibility to integrate nanophotonics into the current silicon-based electronic devices. PMID:25968730

  18. Orientation-dependent nanostructure arrays based on anisotropic silicon wet-etching for repeatable surface-enhanced Raman scattering

    Science.gov (United States)

    Wang, C. G.; Wu, X. Z.; di, D.; Dong, P. T.; Xiao, R.; Wang, S. Q.

    2016-02-01

    Repeatable fabrication of sensitive plasmonic substrates through a simple procedure has become a major challenge for SERS-based sensing and imaging. Herein, a new class of high-performance SERS substrates, including pyramid, ridged-hexagon, and quasi-triangle nanostructures, is successfully fabricated based on the nanosphere lithography technique and anisotropic wet etching. Using the wafer-scale Cr-hole array as the etching mask, cavity-templates of various configurations are fabricated by the orientation-dependent wet etching technique, from where the nanostructure arrays are finally peeled-off. The anisotropic wet etching on (100), (110), and (111) silicon wafers has been systematically studied at the nanoscale revealing the formation mechanism of these cavity-templates. The peeled-off nanostructure arrays provide high-density tips and/or gaps (about 2.5 × 107 mm-2) and thus facilitate the generation of ``hot spots''. The distribution of the electromagnetic field is visualized by the finite difference time domain calculation. And the calculation results are validated by SERS characterization. The SERS enhancement factors of these substrates are in the order of 106-107, with the maximum enhancement factor of 1.32 × 107 yielded by the ridged-hexagon arrays. The proposed nanostructure arrays present excellent homogeneity and reproducibility (with the largest relative standard deviation of 16.43%) for the reason that the SERS-active substrates are peeled-off from an identical template. The cost-effective fabrication, high sensitivity, good homogeneity and well-performed reproducibility demonstrate that these orientation-dependent NSs are good candidates for SERS-based in vitro and in situ detection and biosensing.Repeatable fabrication of sensitive plasmonic substrates through a simple procedure has become a major challenge for SERS-based sensing and imaging. Herein, a new class of high-performance SERS substrates, including pyramid, ridged-hexagon, and quasi

  19. Silicon nanowire arrays coated with electroless Ag for increased surface-enhanced Raman scattering

    Science.gov (United States)

    Bai, Fan; Li, Meicheng; Fu, Pengfei; Li, Ruike; Gu, Tiansheng; Huang, Rui; Chen, Zhao; Jiang, Bing; Li, Yingfeng

    2015-05-01

    The ordered Ag nanorod (AgNR) arrays are fabricated through a simple electroless deposition technique using the isolated Si nanowire (SiNW) arrays as the Ag-grown scaffold. The AgNR arrays have the single-crystallized structure and the plasmonic crystal feature. It is found that the formation of the AgNR arrays is strongly dependent on the filling ratio of SiNWs. A mechanism is proposed based on the selective nucleation and the synergistic growth of Ag nanoparticles on the top of the SiNWs. Moreover, the special AgNR arrays grown on the substrate of SiNWs exhibit a detection sensitivity of 10-15M for rhodamine 6G molecules, which have the potential application to the highly sensitive surface-enhanced Raman scattering sensors.

  20. Silicon on silicon: self-organized nanotip arrays formed in reactive Ar+H{sub 2} plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Levchenko, I; Ostrikov, K [Plasma Nanoscience Centre Australia (PNCA), CSIRO Materials Science and Engineering, PO Box 218, Lindfield NSW 2070 (Australia); Huang, S Y; Xu, S, E-mail: Kostya.Ostrikov@csiro.au [Plasma Sources and Application Center, NIE, Nanyang Technological University, 637616 (Singapore)

    2010-01-15

    The formation of arrays of vertically aligned nanotips on a moderately heated (up to 500 deg. C) Si surface exposed to reactive low-temperature radio frequency (RF) Ar+H{sub 2} plasmas is studied. It is demonstrated that the nanotip surface density, aspect ratio and height dispersion strongly depend on the substrate temperature, discharge power, and gas composition. It is shown that nanotips with aspect ratios from 2.0 to 4.0 can only be produced at a higher RF power density (41.7 mW cm{sup -3}) and a hydrogen content of about 60%, and that larger aspect ratios can be achieved at substrate temperatures of about 300 deg. C. The use of higher (up to 500 deg. C) temperatures leads to a decrease of the aspect ratio but promotes the formation of more uniform arrays with the height dispersion decreasing to 1.5. At lower ({approx}20 mW cm{sup -3}) RF power density, only semispherical nanodots can be produced. Based on these experimental results, a nanotip formation scenario is proposed suggesting that sputtering, etching, hydrogen termination, and atom/radical re-deposition are the main concurrent mechanisms for the nanostructure formation. Numerical calculations of the ion flux distribution and hydrogen termination profiles can be used to predict the nanotip shapes and are in a good agreement with the experimental results. This approach can be applied to describe the kinetics of low-temperature formation of other nanoscale materials by plasma treatment.

  1. Orientation-dependent nanostructure arrays based on anisotropic silicon wet-etching for repeatable surface-enhanced Raman scattering.

    Science.gov (United States)

    Wang, C G; Wu, X Z; Di, D; Dong, P T; Xiao, R; Wang, S Q

    2016-02-28

    Repeatable fabrication of sensitive plasmonic substrates through a simple procedure has become a major challenge for SERS-based sensing and imaging. Herein, a new class of high-performance SERS substrates, including pyramid, ridged-hexagon, and quasi-triangle nanostructures, is successfully fabricated based on the nanosphere lithography technique and anisotropic wet etching. Using the wafer-scale Cr-hole array as the etching mask, cavity-templates of various configurations are fabricated by the orientation-dependent wet etching technique, from where the nanostructure arrays are finally peeled-off. The anisotropic wet etching on (100), (110), and (111) silicon wafers has been systematically studied at the nanoscale revealing the formation mechanism of these cavity-templates. The peeled-off nanostructure arrays provide high-density tips and/or gaps (about 2.5 × 10(7) mm(-2)) and thus facilitate the generation of "hot spots". The distribution of the electromagnetic field is visualized by the finite difference time domain calculation. And the calculation results are validated by SERS characterization. The SERS enhancement factors of these substrates are in the order of 10(6)-10(7), with the maximum enhancement factor of 1.32 × 10(7) yielded by the ridged-hexagon arrays. The proposed nanostructure arrays present excellent homogeneity and reproducibility (with the largest relative standard deviation of 16.43%) for the reason that the SERS-active substrates are peeled-off from an identical template. The cost-effective fabrication, high sensitivity, good homogeneity and well-performed reproducibility demonstrate that these orientation-dependent NSs are good candidates for SERS-based in vitro and in situ detection and biosensing. PMID:26853057

  2. 26+ Year Old Photovoltaic Power Plant: Degradation and Reliability Evaluation of Crystalline Silicon Modules -- South Array

    Science.gov (United States)

    Olakonu, Kolapo

    As the use of photovoltaic (PV) modules in large power plants continues to increase globally, more studies on degradation, reliability, failure modes, and mechanisms of field aged modules are needed to predict module life expectancy based on accelerated lifetime testing of PV modules. In this work, a 26+ year old PV power plant in Phoenix, Arizona has been evaluated for performance, reliability, and durability. The PV power plant, called Solar One, is owned and operated by John F. Long's homeowners association. It is a 200 kW dc, standard test conditions (STC) rated power plant comprised of 4000 PV modules or frameless laminates, in 100 panel groups (rated at 175 kW ac). The power plant is made of two center-tapped bipolar arrays, the north array and the south array. Due to a limited time frame to execute this large project, this work was performed by two masters students (Jonathan Belmont and Kolapo Olakonu) and the test results are presented in two masters theses. This thesis presents the results obtained on the south array and the other thesis presents the results obtained on the north array. Each of these two arrays is made of four sub arrays, the east sub arrays (positive and negative polarities) and the west sub arrays (positive and negative polarities), making up eight sub arrays. The evaluation and analyses of the power plant included in this thesis consists of: visual inspection, electrical performance measurements, and infrared thermography. A possible presence of potential induced degradation (PID) due to potential difference between ground and strings was also investigated. Some installation practices were also studied and found to contribute to the power loss observed in this investigation. The power output measured in 2011 for all eight sub arrays at STC is approximately 76 kWdc and represents a power loss of 62% (from 200 kW to 76 kW) over 26+ years. The 2011 measured power output for the four south sub arrays at STC is 39 kWdc and represents a power

  3. Epitaxial silicon nanowire growth catalyzed by gold dot arrays from electron beam lithography patterning using silane precursors

    Energy Technology Data Exchange (ETDEWEB)

    Hoffmann, Bjoern; Broenstrup, Gerald; Huebner, Uwe; Christiansen, Silke [Institut fuer Photonische Technologien e.V., Abt. Halbleiter Nanostrukturen, Jena (Germany)

    2010-07-01

    Ordered arrays of silicon nanowires (SiNWs) are promising building blocks for a variety of photonic, photovoltaic and sensor applications. In our approach to create SiNWs we use electron beam lithography (EBL) and thermal metal evaporation to create nano-patterned arrays of gold nanodots on a Si(111) wafer. These Au dots are subsequently used to catalyze the bottom-up growth of SiNWs that follow the vapor-liquid-solid (VLS) growth mechanism using silane in a CVD reactor. The grown nanowires are characterized structurally using SEM, TEM and electron backscatter diffraction (EBSD). We observe epitaxial growth of the SiNWs on the Si(111) wafer and we are able to control the growth direction to be either dominated by <111> or <112> directions by just changing the silane partial pressure. The lengths as well as the diameters of the wires are precisely controlled by the EBL Au dot patterning and CVD parameters. To predict wire diameters modelling is carried out that takes into account the EBL- and CVD-parameters and describes the observed experimental results very well. Furthermore we were able to create single crystalline Au-dot arrays which are very promising structures for surface enhanced raman spectroscopy (SERS) substrates.

  4. Large-Area, UV-Optimized, Back-Illuminated Silicon Photomultiplier Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Large-area (3m2), UV-sensitive focal plane arrays are needed for observation of air showers from ultra-high energy cosmic rays (JEM-EUSO) as well as for...

  5. Fabrication and doping methods for silicon nano- and micropillar arrays for solar cell applications: a review

    NARCIS (Netherlands)

    Elbersen, R.; Vijselaar, W.J.C.; Tiggelaar, R.M.; Gardeniers, J.G.E.; Huskens, J.

    2015-01-01

    Silicon is one of the main components of commercial solar cells and is used in many other solar-light-harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer- to micrometer-sized pillars with radial p/n junctions. High den

  6. Photosensor Characterization for the Cherenkov Telescope Array: Silicon Photomultiplier versus Multi-Anode Photomultiplier Tube

    OpenAIRE

    Bouvier, Aurelien; Gebremedhin, Lloyd; Johnson, Caitlin; Kuznetsov, Andrey; Williams, David; Otte, Nepomuk; Strausbaugh, Robert; Hidaka, Naoya; Tajima, Hiroyasu; Hinton, Jim; White, Richard; Errando, Manel; Mukherjee, Reshmi

    2013-01-01

    Photomultiplier tube technology has been the photodetector of choice for the technique of imaging atmospheric Cherenkov telescopes since its birth more than 50 years ago. Recently, new types of photosensors are being contemplated for the next generation Cherenkov Telescope Array. It is envisioned that the array will be partly composed of telescopes using a Schwarzschild-Couder two mirror design never built before which has significantly improved optics. The camera of this novel optical design...

  7. Wafer-Scale Integration of Inverted Nanopyramid Arrays for Advanced Light Trapping in Crystalline Silicon Thin Film Solar Cells.

    Science.gov (United States)

    Zhou, Suqiong; Yang, Zhenhai; Gao, Pingqi; Li, Xiaofeng; Yang, Xi; Wang, Dan; He, Jian; Ying, Zhiqin; Ye, Jichun

    2016-12-01

    Crystalline silicon thin film (c-Si TF) solar cells with an active layer thickness of a few micrometers may provide a viable pathway for further sustainable development of photovoltaic technology, because of its potentials in cost reduction and high efficiency. However, the performance of such cells is largely constrained by the deteriorated light absorption of the ultrathin photoactive material. Here, we report an efficient light-trapping strategy in c-Si TFs (~20 μm in thickness) that utilizes two-dimensional (2D) arrays of inverted nanopyramid (INP) as surface texturing. Three types of INP arrays with typical periodicities of 300, 670, and 1400 nm, either on front, rear, or both surfaces of the c-Si TFs, are fabricated by scalable colloidal lithography and anisotropic wet etch technique. With the extra aid of antireflection coating, the sufficient optical absorption of 20-μm-thick c-Si with a double-sided 1400-nm INP arrays yields a photocurrent density of 39.86 mA/cm(2), which is about 76 % higher than the flat counterpart (22.63 mA/cm(2)) and is only 3 % lower than the value of Lambertian limit (41.10 mA/cm(2)). The novel surface texturing scheme with 2D INP arrays has the advantages of excellent antireflection and light-trapping capabilities, an inherent low parasitic surface area, a negligible surface damage, and a good compatibility for subsequent process steps, making it a good alternative for high-performance c-Si TF solar cells. PMID:27071681

  8. Superparamagnetic iron oxide nanoparticle attachment on array of micro test tubes and microbeakers formed on p-type silicon substrate for biosensor applications

    Science.gov (United States)

    Ghoshal, Sarmishtha; Ansar, Abul Am; Raja, Sufi O.; Jana, Arpita; Bandyopadhyay, Nil R.; Dasgupta, Anjan K.; Ray, Mallar

    2011-10-01

    A uniformly distributed array of micro test tubes and microbeakers is formed on a p-type silicon substrate with tunable cross-section and distance of separation by anodic etching of the silicon wafer in N, N-dimethylformamide and hydrofluoric acid, which essentially leads to the formation of macroporous silicon templates. A reasonable control over the dimensions of the structures could be achieved by tailoring the formation parameters, primarily the wafer resistivity. For a micro test tube, the cross-section (i.e., the pore size) as well as the distance of separation between two adjacent test tubes (i.e., inter-pore distance) is typically approximately 1 μm, whereas, for a microbeaker the pore size exceeds 1.5 μm and the inter-pore distance could be less than 100 nm. We successfully synthesized superparamagnetic iron oxide nanoparticles (SPIONs), with average particle size approximately 20 nm and attached them on the porous silicon chip surface as well as on the pore walls. Such SPION-coated arrays of micro test tubes and microbeakers are potential candidates for biosensors because of the biocompatibility of both silicon and SPIONs. As acquisition of data via microarray is an essential attribute of high throughput bio-sensing, the proposed nanostructured array may be a promising step in this direction.

  9. Superparamagnetic iron oxide nanoparticle attachment on array of micro test tubes and microbeakers formed on p-type silicon substrate for biosensor applications

    Directory of Open Access Journals (Sweden)

    Raja Sufi

    2011-01-01

    Full Text Available Abstract A uniformly distributed array of micro test tubes and microbeakers is formed on a p-type silicon substrate with tunable cross-section and distance of separation by anodic etching of the silicon wafer in N, N-dimethylformamide and hydrofluoric acid, which essentially leads to the formation of macroporous silicon templates. A reasonable control over the dimensions of the structures could be achieved by tailoring the formation parameters, primarily the wafer resistivity. For a micro test tube, the cross-section (i.e., the pore size as well as the distance of separation between two adjacent test tubes (i.e., inter-pore distance is typically approximately 1 μm, whereas, for a microbeaker the pore size exceeds 1.5 μm and the inter-pore distance could be less than 100 nm. We successfully synthesized superparamagnetic iron oxide nanoparticles (SPIONs, with average particle size approximately 20 nm and attached them on the porous silicon chip surface as well as on the pore walls. Such SPION-coated arrays of micro test tubes and microbeakers are potential candidates for biosensors because of the biocompatibility of both silicon and SPIONs. As acquisition of data via microarray is an essential attribute of high throughput bio-sensing, the proposed nanostructured array may be a promising step in this direction.

  10. Surface nano-texturing of silicon by picosecond laser irradiation through TiO2 nanotube arrays

    Science.gov (United States)

    Babu, K. E. Sarath Raghavendra; Duraiselvam, Muthukannan

    2015-10-01

    This article presents, nano-texturing of crystalline silicon by irradiating picosecond laser with variable spatial intensity, caused by optically non-linear TiO2 nanotube arrays (TNTA). Along with micro-scale surface structure, highly ordered laser-induced periodic surface structures (LIPSS) was observed at nano-scale. The periodicity (Λ) of the LIPSS generated was near to the laser wavelength (532 nm). Surface morphology at micro-level was characterized by optical microscopy (OM) and white light interferometer (WLI) and at the nano-scale by scanning electron microscope (SEM) and atomic force microscope (AFM). The results highlight the potential use of TNTA as a single step process to produce micro/nanostructures without any gas/liquid medium under ambient condition.

  11. Determination of parameters for successful spray coating of silicon microneedle arrays

    OpenAIRE

    Marie G McGrath; Vrdoljak, Anto; O'Mahony, Conor; Oliveira, Jorge C.; Moore, Anne C.; Abina M. Crean

    2011-01-01

    Coated microneedle patches have demonstrated potential for effective, minimally invasive, drug and vaccine delivery. To facilitate cost-effective, industrial-scale production of coated microneedle patches, a continuous coating method which utilises conventional pharmaceutical processes is an attractive prospect. Here, the potential of spray-coating silicon microneedle patches using a conventional film-coating process was evaluated and the key process parameters which impact on coating coalesc...

  12. The giant enhancement of Fano-type resonance in a gain-assisted silicon slab array

    Institute of Scientific and Technical Information of China (English)

    Dong Zheng-Gao; Li Jia-Qi; Shao Jian; Yu Xiao-Qiang; Wang Yu-Kun; Zhai Ya

    2013-01-01

    Giant resonance enhancement is demonstrated to be due to the Fano interference in a grating waveguide composed of gain-assisted silicon slabs.The Fano mode is characterized by its ultra-narrow asymmetric spectrum,different from that of a pure electric or magnetic dipole.The simulation indicates that a sharp Fano-interfered lineshape is responsible for the giant resonance enhancement featuring the small-gain requirements.

  13. The giant enhancement of Fano-type resonance in a gain-assisted silicon slab array

    International Nuclear Information System (INIS)

    Giant resonance enhancement is demonstrated to be due to the Fano interference in a grating waveguide composed of gain-assisted silicon slabs. The Fano mode is characterized by its ultra-narrow asymmetric spectrum, different from that of a pure electric or magnetic dipole. The simulation indicates that a sharp Fano-interfered lineshape is responsible for the giant resonance enhancement featuring the small-gain requirements. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  14. Functionalization of silicon nanowire arrays by silver nanoparticles for the laser desorption ionization mass spectrometry analysis of vegetable oils.

    Science.gov (United States)

    Picca, Rosaria Anna; Calvano, Cosima Damiana; Lo Faro, Maria Josè; Fazio, Barbara; Trusso, Sebastiano; Ossi, Paolo Maria; Neri, Fortunato; D'Andrea, Cristiano; Irrera, Alessia; Cioffi, Nicola

    2016-09-01

    In this work, novel hybrid nanostructured surfaces, consisting of dense arrays of silicon nanowires (SiNWs) functionalized by Ag nanoparticles (AgNP/SiNWs), were used for the laser desorption/ionization time-of-flight mass spectrometry (LDI-TOF MS) analysis of some typical unsaturated food components (e.g. squalene, oleic acid) to assess their MS performance. The synthesis of the novel platforms is an easy, cost-effective process based on the maskless wet-etching preparation at room temperature of SiNWs followed by their decoration with AgNPs, produced by pulsed laser deposition. No particular surface pretreatment or addition of organic matrixes/ionizers was necessary. Moreover, oil extracts (e.g. extra virgin olive oil, peanut oil) could be investigated on AgNP/SiNWs surfaces, revealing their different MS profiles. It was shown that such substrates operate at reduced laser energy, typically generating intense silver cluster ions and analyte adducts. A comparison with bare SiNWs was also performed, indicating the importance of AgNP density on NW surface. In this case, desorption/ionization on silicon was invoked as probable LDI mechanism. Finally, the influence of SiNW length and surface composition on MS results was assessed. The combination of typical properties of SiNWs (hydrophobicity, antireflectivity) with ionization ability of metal NPs can be a valid methodology for the further development of nanostructured surfaces in LDI-TOF MS applications. Copyright © 2016 John Wiley & Sons, Ltd.

  15. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    KAUST Repository

    Zhai, Yujia

    2012-11-26

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  16. A linear monolithic 4-6 on silicon IR detector array

    Science.gov (United States)

    Vandamme, J.; Vermeiren, J.; Zogg, H.; Masek, J.; Fabbricotti, M.

    1992-12-01

    A linear array of monolithically grown PbTe and PbSnSe detectors on (111)-Si for MWIR and TIR imaging applications was designed and processed. The array consists of a staggered row of 2 by 128 detectors on a 100 micrometers pitch. The readout circuitry, integrated on the Si substrate consists of a COS multiplexer with a direct injection input stage, a charge reduction stage and charge to voltage conversion stage for each individual detector. This XDI (MultipeXed Direct Injection) circuit also allows for on-chip nonuniformity compensation with a switched capacitor network.

  17. Built-In Self-Test Circuits for Silicon Phased Array Applications /

    OpenAIRE

    Inac, Ozgur

    2013-01-01

    The thesis presents built-in self-test circuits for phased array applications, and the characterization of a 45 nm CMOS SOI technology for millimeter-wave systems. First, an X-Band phased-array RF integrated circuit with built-in self-test (BIST) capabilities is presented. The BIST is accomplished using a miniature capacitive coupler at the input of each channel and an on-chip I/Q vector receiver. Systematic effects introduced with BIST system are covered in detail and are calibrated out of t...

  18. Silicon-Copper Helical Arrays for New Generation Lithium Ion Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Polat, B. D.; Keles, O; Amine, K

    2015-09-22

    The helical array (with 10 atom % Cu) exhibits 3130 mAh g–1 with 83% columbic efficiency and retains 83% of its initial discharge capacity after 100th cycle. Homogeneously distributed interspaces between the helical arrays accommodate high volumetric changes upon cycling and copper atoms form a conductive network to buffer the mechanical stress generated in the electrode while minimizing electrochemical agglomeration of Si. Also, ion assistance is believed to enhance the density of the helices at the bottom thus increasing the adhesion

  19. First results of a novel Silicon Drift Detector array designed for low energy X-ray fluorescence spectroscopy

    Science.gov (United States)

    Rachevski, Alexandre; Ahangarianabhari, Mahdi; Bellutti, Pierluigi; Bertuccio, Giuseppe; Brigo, Elena; Bufon, Jernej; Carrato, Sergio; Castoldi, Andrea; Cautero, Giuseppe; Fabiani, Sergio; Giacomini, Gabriele; Gianoncelli, Alessandra; Giuressi, Dario; Guazzoni, Chiara; Kourousias, George; Liu, Chang; Menk, Ralf Hendrik; Montemurro, Giuseppe Vito; Picciotto, Antonino; Piemonte, Claudio; Rashevskaya, Irina; Shi, Yongbiao; Stolfa, Andrea; Vacchi, Andrea; Zampa, Gianluigi; Zampa, Nicola; Zorzi, Nicola

    2016-07-01

    We developed a trapezoidal shaped matrix with 8 cells of Silicon Drift Detectors (SDD) featuring a very low leakage current (below 180 pA/cm2 at 20 °C) and a shallow uniformly implanted p+ entrance window that enables sensitivity down to few hundreds of eV. The matrix consists of a completely depleted volume of silicon wafer subdivided into 4 square cells and 4 half-size triangular cells. The energy resolution of a single square cell, readout by the ultra-low noise SIRIO charge sensitive preamplifier, is 158 eV FWHM at 5.9 keV and 0 °C. The total sensitive area of the matrix is 231 mm2 and the wafer thickness is 450 μm. The detector was developed in the frame of the INFN R&D project ReDSoX in collaboration with FBK, Trento. Its trapezoidal shape was chosen in order to optimize the detection geometry for the experimental requirements of low energy X-ray fluorescence (LEXRF) spectroscopy, aiming at achieving a large detection angle. We plan to exploit the complete detector at the TwinMic spectromicroscopy beamline at the Elettra Synchrotron (Trieste, Italy). The complete system, composed of 4 matrices, increases the solid angle coverage of the isotropic photoemission hemisphere about 4 times over the present detector configuration. We report on the layout of the SDD matrix and of the experimental set-up, as well as the spectroscopic performance measured both in the laboratory and at the experimental beamline.

  20. Biocompatibility of silicon-based arrays of electrodes coupled to organotypic hippocampal brain slice cultures

    DEFF Research Database (Denmark)

    Kristensen, Bjarne Winther; Noraberg, J; Thiébaud, P;

    2001-01-01

    arrays and develop normally with display of normal subfield differentiated susceptibilities to known excito- and neurotoxins. From this it is anticipated that the set-up, designed for recording of electrophysiological parameters, can be used for long-term studies of defined neuronal networks and provide...

  1. Microchannel-connected SU-8 honeycombs by single-step projection photolithography for positioning cells on silicon oxide nanopillar arrays

    International Nuclear Information System (INIS)

    We report on the fabrication, functionalization and testing of SU-8 microstructures for cell culture and positioning over large areas. The microstructure consists of a honeycomb arrangement of cell containers interconnected by microchannels and centered on nanopillar arrays designed for promoting cell positioning. The containers have been dimensioned to trap single cells and, with a height of 50 µm, prevent cells from escaping. The structures are fabricated using a single ultraviolet photolithography exposure with focus depth in the lower part of the SU-8 resist. With optimized process parameters, microchannels of various aspect ratios are thus produced. The cell containers and microchannels serve for the organization of axonal growth between neurons. The roughly 2 µm-high and 500 nm-wide nanopillars are made of silicon oxide structured by deep reactive ion etching. In future work, beyond their cell positioning purpose, the nanopillars could be functionalized as sensors. The proof of concept of the novel microstructure for organized cell culture is given by the successful growth of interconnected PC12 cells. Promoted by the honeycomb geometry, a dense network of interconnections between the cells has formed and the intended intimate contact of cells with the nanopillar arrays was observed by scanning electron microscopy. This proves the potential of these new devices as tools for the controlled cell growth in an interconnected container system with well-defined 3D geometry. (paper)

  2. Influence of growth time on field emission properties from carbon nanotubes deposited on arrayed nanoporous silicon pillars

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Weifen, E-mail: gingerwfj@yahoo.com.cn [Department of Mathematics and Information Science, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Hao Haoshan [Department of Mathematical and Physical Sciences, Henan Institute of Engineering, Zhengzhou 451191 (China); Wang Yusheng; Xu Lei; Zhang Tianjie [Department of Mathematics and Information Science, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China)

    2011-05-15

    We investigated the influence of growth time on field emission properties of multi-walled carbon nanotubes deposited on silicon nanoporous pillar array (MWCNTs/Si-NPA), which were fabricated by thermal chemical vapour deposition at 800 deg. C for 5, 15 and 25 min respectively, to better understand the origins of good field emission properties. The results showed that the MWCNTs/Si-NPA grown for 15 min had the highest field emission efficiency of the three types of samples. Morphologies of the products were examined by field-emission scanning electron microscope, and the excellent field emission performance was attributed not only to the formation of a nest array of multi-walled carbon nanotubes, which would largely reduce the electrostatic shielding among the emitters and resulted in a great enhancement factor, but also to the medium MWCNTs density films, there was an ideal compromise between the emitter density and the intertube distance, which also could effectively avoid electrostatic shielding effects, along with a high emitter density.

  3. Angle of regional and non-independent PV array%区域性非独立光伏方阵安装倾角的研究

    Institute of Scientific and Technical Information of China (English)

    魏建新; 申健

    2011-01-01

    With the wide application of PV in China, the problem of the best angle of solar array has drawn the increasing attentions. The angle calculation of the independent solar panels was discussed in this paper, the impact of the solar array angle on the wind and solar power generation system was analyzed, and the solutions to define the solar parameters according to the regional wind and PV hybrid parameters were proposed.%随着光伏发电在我国的广泛应用,光伏阵列的最佳倾角问题也越来越引起人们的重视,在论述独立太阳电池板倾角计算方法的基础上,较为深入的分析了风光互补发电系统中光伏阵列倾角对系统发电的影响,并提出了根据区域性风光互补参数确定太阳能倾角的基本解决办法.

  4. Observation of valence band electron emission from n-type silicon field emitter arrays

    Science.gov (United States)

    Ding, Meng; Kim, Han; Akinwande, Akintunde I.

    1999-08-01

    Electron emission from the valence band of n-type Si field emitter arrays is reported. High electrostatic field at the surface of Si was achieved by reducing the radius of the emitter tip. Using oxidation sharpening, 1 μm aperture polycrystalline Si gate, n-type Si field emitter arrays with small tip radius (˜10 nm) were fabricated. Three distinct emission regions were observed: conduction band emission at low gate voltages, saturated current emission from the conduction band at intermediate voltages, and valence band plus conduction band emission at high gate voltages. Emission currents at low and high voltages obey the Fowler-Nordheim theory. The ratio of the slopes of the corresponding Fowler-Nordheim fits for these two regions is 1.495 which is in close agreement with the theoretical value of 1.445.

  5. Development of macropore arrays in silicon and related technologies for X-ray imaging applications

    OpenAIRE

    Badel, Xavier

    2003-01-01

    Digital devices have started to replace photographic film inX-ray imaging applications. As compared to photographic films,these devices are more convenient to obtain images and tohandle, treat and store these images. The goal of the presentstudy is to develop macropore arrays and related silicontechnologies in order to fabricate X-ray imaging detectors formedical applications, and in particular for dentistry. Althougha few detectors are already available on the market, theirperformances, such...

  6. Silicon Geiger-mode avalanche photodiode arrays for photon-starved imaging

    Science.gov (United States)

    Aull, Brian F.

    2015-05-01

    Geiger-mode avalanche photodiodes (GMAPDs) are capable of detecting single photons. They can be operated to directly trigger all-digital circuits, so that detection events are digitally counted or time stamped in each pixel. An imager based on an array of GMAPDs therefore has zero readout noise, enabling quantum-limited sensitivity for photon-starved imaging applications. In this review, we discuss devices developed for 3D imaging, wavefront sensing, and passive imaging.

  7. Coupling of organotypic brain slice cultures to silicon-based arrays of electrodes

    DEFF Research Database (Denmark)

    Jahnsen, Henrik; Kristensen, Bjarne Winther; Thiébaud, P;

    1999-01-01

    Fetal or early postnatal brain tissue can be cultured in viable and healthy condition for several weeks with development and preservation of the basic cellular and connective organization as so-called organotypic brain slice cultures. Here we demonstrate and describe how it is possible to establi...... arrays it is anticipated that the setup eventually will allow long-term studies of defined neuronal networks and provide valuable information on both normal and neurotoxicological and neuropathological conditions....

  8. Silicon-on-ceramic coating process. Silicon sheet growth development for the Large-Area Silicon Sheet and Cell Development Tasks of the Low-Cost Silicon Solar Array Project. Quarterly report No. 8, December 28, 1977--March 28, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Chapman, P.W. Zook, J.D.; Heaps, J D; Maclolek, R B; Koepke, B; Butter, C D; Schult, S B

    1978-04-20

    A research program to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating inexpensive ceramic substrates with a thin layer of polycrystalline silicon is described. The coating methods to be developed are directed toward a minimum-cost process for producing solar cells with a terrestrial conversion efficiency of 12 percent or greater. By applying a graphite coating to one face of a ceramic substrate, molten silicon can be caused to wet only that graphite-coated face and produce uniform thin layers of large-grain polycrystalline silicon; thus, only a minimal quantity of silicon is consumed. A dip-coating method for putting silicon on ceramic (SOC) has been shown to produce solar-cell-quality sheet silicon. This method and a continuous coating process also being investigated have excellent scale-up potential which offers an outstanding cost-effective way to manufacture large-area solar cells. A variety of ceramic materials have been dip-coated with silicon. The investigation has shown that mullite substrates containing an excess of SiO/sub 2/ best match the thermal expansion coefficient of silicon and hence produce the best SOC layers. With such substrates, smooth and uniform silicon layers 25 cm/sup 2/ in area have been achieved with single-crystal grains as large as 4 mm in width and several cm in length. Solar cells with areas from 1 to 10 cm/sup 2/ have been fabricated from material withas-grown surface. Recently, an antireflection (AR) coating has been applied to SOC cells. Conversion efficiencies greater than 9% have been achieved without optimizing series resistance characteristics. Such cells typically have open-circuit voltages and short-circuit current densities of 0.51 V and 20 mA/cm/sup 2/, respectively.

  9. Bio-Inspired Wide-Angle Broad-Spectrum Cylindrical Lens Based on Reflections from Micro-Mirror Array on a Cylindrical Elastomeric Membrane

    Directory of Open Access Journals (Sweden)

    Chi-Chieh Huang

    2014-06-01

    Full Text Available We present a wide-angle, broad-spectrum cylindrical lens based on reflections from an array of three-dimensional, high-aspect-ratio micro-mirrors fabricated on a cylindrical elastomeric substrate, functionally inspired by natural reflecting superposition compound eyes. Our device can perform one-dimensional focusing and beam-shaping comparable to conventional refraction-based cylindrical lenses, while avoiding chromatic aberration. The focal length of our cylindrical lens is 1.035 mm, suitable for micro-optical systems. Moreover, it demonstrates a wide field of view of 152° without distortion, as well as modest spherical aberrations. Our work could be applied to diverse applications including laser diode collimation, barcode scanning, holography, digital projection display, microlens arrays, and optical microscopy.

  10. A CdZnTe array for the detection of explosives in baggage by energy-dispersive X-ray diffraction signatures at multiple scatter angles

    Science.gov (United States)

    Malden, Catharine H.; Speller, Robert. D.

    2000-07-01

    CdZnTe detectors were used to collect energy-dispersive diffraction spectra at a range of scatter angles, from sheets of explosives hidden in baggage. It is shown that the combined information from these `signatures' can be used to determine whether an explosive sample is present or not. The geometrical configuration of the collimation and the position of the baggage within the scanner must be taken into careful consideration when optimising the capabilities of such a system. The CdZnTe array lends itself well to the detection of explosives in baggage since multiple signals may be collected simultaneously providing more rapid detection than achieved using a single detector.

  11. A CdZnTe array for the detection of explosives in baggage by energy-dispersive X-ray diffraction signatures at multiple scatter angles

    CERN Document Server

    Malden, C H

    2000-01-01

    CdZnTe detectors were used to collect energy-dispersive diffraction spectra at a range of scatter angles, from sheets of explosives hidden in baggage. It is shown that the combined information from these 'signatures' can be used to determine whether an explosive sample is present or not. The geometrical configuration of the collimation and the position of the baggage within the scanner must be taken into careful consideration when optimising the capabilities of such a system. The CdZnTe array lends itself well to the detection of explosives in baggage since multiple signals may be collected simultaneously providing more rapid detection than achieved using a single detector.

  12. Ultra-high efficient solar cell based on decagonal arrays of silicon nanowires

    Science.gov (United States)

    Hussein, Mohamed; Hameed, Mohamed Farhat O.; Areed, Nihal F. F.; Obayya, Salah Sabry A.

    2014-11-01

    Silicon nanowires (SiNWs) are the subject of intense research in solar energy harvesting due to their unique electrical and optical characteristics. The transmission, reflection, and absorption spectra of decagonal Si NWs (D-SiNWs) solar cells have been calculated using a three-dimensional finite-difference time-domain method to present a design guideline for ultra-high efficiency SiNW in solar cell applications. In this study, the structure geometrical parameters of the suggested design are tuned to maximize light absorption. The ultimate efficiency is used to quantify the absorption enhancement of the SiNWs solar cells. A maximum ultimate efficiency of 39.3% is achieved for the reported D-SiNWs, which is greater than that of the previous work of slanting Si NWs by 17.49%.

  13. Operation and first results of the NEXT-DEMO prototype using a silicon photomultiplier tracking array

    CERN Document Server

    Álvarez, V; Cárcel, S; Castel, J; Cebrián, S; Cervera, A; Conde, C A N; Dafni, T; Dias, T H V T; Díaz, J; Egorov, M; Esteve, R; Evtoukhovitch, P; Fernandes, L M P; Ferrario, P; Ferreira, A L; Freitas, E D C; Gehman, V M; Gil, A; Goldschmidt, A; Gómez, H; Gómez-Cadenas, J J; González-Díaz, D; Gutiérrez, R M; Hauptman, J; Morata, J A Hernando; Herrera, D C; Iguaz, F J; Irastorza, I G; Jinete, M A; Labarga, L; Laing, A; Liubarsky, I; Lopes, J A M; Lorca, D; Losada, M; Luzón, G; Marí, A; Martín-Albo, J; Martínez, A; Martínez, G; Miller, T; Moiseenko, A; Monrabal, F; Monteiro, C M B; Mora, F J; Moutinho, L M; Vidal, J Muñoz; da Luz, H Natal; Navarro, G; Nebot-Guinot, M; Nygren, D; Oliveira, C A B; Palma, R; Pérez, J; Aparicio, J L Pérez; Renner, J; Ripoll, L; Rodríguez, A; Rodríguez, J; Santos, F P; Santos, J M F dos; Seguí, L; Serra, L; Shuman, D; Simón, A; Sofka, C; Sorel, M; Toledo, J F; Tomás, A; Torrent, J; Tsamalaidze, Z; Veloso, J F C A; Villar, J A; Webb, R; White, J T; Yahlali, N

    2013-01-01

    NEXT-DEMO is a high-pressure xenon gas TPC which acts as a technological test-bed and demonstrator for the NEXT-100 neutrinoless double beta decay experiment. In its current configuration the apparatus fully implements the NEXT-100 design concept. This is an asymmetric TPC, with an energy plane made of photomultipliers and a tracking plane made of silicon photomultipliers (SiPM) coated with TPB. The detector in this new configuration has been used to reconstruct the characteristic signature of electrons in dense gas. Demonstrating the ability to identify the MIP and ``blob'' regions. Moreover, the SiPM tracking plane allows for the definition of a large fiducial region in which an excellent energy resolution of 1.82% FWHM at 511 keV has been measured (a value which extrapolates to 0.83% at the xenon Qbetabeta).

  14. Wide Range pH-Tolerable Silicon@Pyrite Cobalt Dichalcogenide Microwire Array Photoelectrodes for Solar Hydrogen Evolution.

    Science.gov (United States)

    Chen, Chih-Jung; Yang, Kai-Chih; Basu, Mrinmoyee; Lu, Tzu-Hsiang; Lu, Ying-Rui; Dong, Chung-Li; Hu, Shu-Fen; Liu, Ru-Shi

    2016-03-01

    This study employed silicon@cobalt dichalcogenide microwires (MWs) as wide range pH-tolerable photocathode material for solar water splitting. Silicon microwire arrays were fabricated through lithography and dry etching technologies. Si@Co(OH)2 MWs were utilized as precursors to synthesize Si@CoX2 (X = S or Se) photocathodes. Si@CoS2 and Si@CoSe2 MWs were subsequently prepared by thermal sulfidation and hydrothermal selenization reaction of Si@Co(OH)2, respectively. The CoX2 outer shell served as cocatalyst to accelerate the kinetics of photogenerated electrons from the underlying Si MWs and reduce the recombination. Moreover, the CoX2 layer completely deposited on the Si surface functioned as a passivation layer by decreasing the oxide formation on Si MWs during solar hydrogen evolution. Si@CoS2 photocathode showed a photocurrent density of -3.22 mA cm(-2) at 0 V (vs RHE) in 0.5 M sulfuric acid electrolyte, and Si@CoSe2 MWs revealed moderate photocurrent density of -2.55 mA cm(-2). However, Si@CoSe2 presented high charge transfer efficiency in neutral and alkaline electrolytes. Continuous chronoamperometry in acid, neutral, and alkaline solutions was conducted at 0 V (vs RHE) to evaluate the photoelectrochemical durability of Si@CoX2 MWs. Si@CoS2 electrode showed no photoresponse after the chronoamperometry test because it was etched through the electrolyte. By contrast, the photocurrent density of Si@CoSe2 MWs gradually increased to -5 mA cm(-2) after chronoamperometry characterization owing to the amorphous structure generation. PMID:26859427

  15. A Low-Power, Radiation-Resistant, Silicon-Drift-Detector Array for Extraterrestrial Element Mapping

    Energy Technology Data Exchange (ETDEWEB)

    Ramsey B. D.; De Geronimo G.; Gaskin, J.A.; Elsner, R.F.; Chen, W.; Carini, G.A.; Keister, J.; Li, S.; Li, Z.; Siddons, D.P.; Smith, G.

    2012-02-08

    We are developing a modular Silicon Drift Detector (SDD) X-Ray Spectrometer (XRS) for measuring the abundances of light surface elements (C to Fe) fluoresced by ambient radiation on remote airless bodies. The value of fluorescence spectrometry for surface element mapping is demonstrated by its inclusion on three recent lunar missions and by exciting new data that have recently been announced from the Messenger Mission to Mercury. The SDD-XRS instrument that we have been developing offers excellent energy resolution and an order of magnitude lower power requirement than conventional CCDs, making much higher sensitivities possible with modest spacecraft resources. In addition, it is significantly more radiation resistant than x-ray CCDs and therefore will not be subject to the degradation that befell recent lunar instruments. In fact, the intrinsic radiation resistance of the SDD makes it applicable even to the harsh environment of the Jovian system where it can be used to map the light surface elements of Europa. In this paper, we first discuss our element-mapping science-measurement goals. We then derive the necessary instrument requirements to meet these goals and discuss our current instrument development status with respect to these requirements.

  16. 硅纳米线阵列的制备及光伏性能%Preparation and Photovoltaic Properties of Silicon Nanowire Arrays

    Institute of Scientific and Technical Information of China (English)

    蒋玉荣; 秦瑞平; 蔡方敏; 杨海刚; 马恒; 常方高

    2013-01-01

    在常温常压下,采用无电极金属催化化学腐蚀法在P型单晶硅片(100)基底上制备定向排列的硅纳米线阵列.研究了不同浓度硝酸银对纳米线阵列形貌、反射光谱性能的影响和具有电池雏形的硅纳米线阵列的光伏性能.结果表明:硝酸银浓度在0.02 mol/L时为最佳配比;与普通绒面电池相比,硅纳米线阵列太阳能电池的光电转换性能明显优于普通绒面电池.用光谱响应分析手段分析硅纳米线电池光伏性能的影响因素,并提出解决办法.%Large area aligned identical silicon nanowires array was prepared on mono-crystalline p-Si(100) wafers via the metal-assisted electroless etching at room temperature, 1.01 × 105Pa, The morphologies and reflection spectra of the samples prepared at different nitric acid silver concentrations were analyzed. In addition, the photovoltaic performance of solar cell silicon based on the nanowires array was investigated. The results show that the optimal concentration of nitric acid silver concentration is 0.02 mol/L. The photoelectric conversion property of solar cells based on the silicon nanowire arrays were better than that of the ordinary texturing solar cell. The photovoltaic performance of silicon nanowires array was also analyzed via the spectral response of different wavelengths.

  17. Silicon Wafer-Based Platinum Microelectrode Array Biosensor for Near Real-Time Measurement of Glutamate in Vivo

    Directory of Open Access Journals (Sweden)

    Nigel T. Maidment

    2008-08-01

    Full Text Available Using Micro-Electro-Mechanical-Systems (MEMS technologies, we have developed silicon wafer-based platinum microelectrode arrays (MEAs modified with glutamate oxidase (GluOx for electroenzymatic detection of glutamate in vivo. These MEAs were designed to have optimal spatial resolution for in vivo recordings. Selective detection of glutamate in the presence of the electroactive interferents, dopamine and ascorbic acid, was attained by deposition of polypyrrole and Nafion. The sensors responded to glutamate with a limit of detection under 1μM and a sub-1-second response time in solution. In addition to extensive in vitro characterization, the utility of these MEA glutamate biosensors was also established in vivo. In the anesthetized rat, these MEA glutamate biosensors were used for detection of cortically-evoked glutamate release in the ventral striatum. The MEA biosensors also were applied to the detection of stress-induced glutamate release in the dorsal striatum of the freely-moving rat.

  18. Structural and Electrochemical Investigation during the First Charging Cycles of Silicon Microwire Array Anodes for High Capacity Lithium Ion Batteries

    Directory of Open Access Journals (Sweden)

    Helmut Föll

    2013-02-01

    Full Text Available Silicon microwire arrays embedded in Cu present exceptional performance as anode material in Li ion batteries. The processes occurring during the first charging cycles of batteries with this anode are essential for good performance. This paper sheds light on the electrochemical and structural properties of the anodes during the first charging cycles. Scanning Electron Microscopy, X-ray diffractommetry, and fast Fourier transformation impedance spectroscopy are used for the characterization. It was found that crystalline phases with high Li content are obtained after the first lithiation cycle, while for the second lithiation just crystalline phases with less Li are observable, indicating that the lithiated wires become amorphous upon cycling. The formation of a solid electrolyte interface of around 250 nm during the first lithiation cycle is evidenced, and is considered a necessary component for the good cycling performance of the wires. Analog to voltammetric techniques, impedance spectroscopy is confirmed as a powerful tool to identify the formation of the different Si-Li phases.

  19. Nanostructured Indium Oxide Coated Silicon Nanowire Arrays: A Hybrid Photothermal/Photochemical Approach to Solar Fuels.

    Science.gov (United States)

    Hoch, Laura B; O'Brien, Paul G; Jelle, Abdinoor; Sandhel, Amit; Perovic, Douglas D; Mims, Charles A; Ozin, Geoffrey A

    2016-09-27

    The field of solar fuels seeks to harness abundant solar energy by driving useful molecular transformations. Of particular interest is the photodriven conversion of greenhouse gas CO2 into carbon-based fuels and chemical feedstocks, with the ultimate goal of providing a sustainable alternative to traditional fossil fuels. Nonstoichiometric, hydroxylated indium oxide nanoparticles, denoted In2O3-x(OH)y, have been shown to function as active photocatalysts for CO2 reduction to CO via the reverse water gas shift reaction under simulated solar irradiation. However, the relatively wide band gap (2.9 eV) of indium oxide restricts the portion of the solar irradiance that can be utilized to ∼9%, and the elevated reaction temperatures required (150-190 °C) reduce the overall energy efficiency of the process. Herein we report a hybrid catalyst consisting of a vertically aligned silicon nanowire (SiNW) support evenly coated by In2O3-x(OH)y nanoparticles that utilizes the vast majority of the solar irradiance to simultaneously produce both the photogenerated charge carriers and heat required to reduce CO2 to CO at a rate of 22.0 μmol·gcat(-1)·h(-1). Further, improved light harvesting efficiency of the In2O3-x(OH)y/SiNW films due to minimized reflection losses and enhanced light trapping within the SiNW support results in a ∼6-fold increase in photocatalytic conversion rates over identical In2O3-x(OH)y films prepared on roughened glass substrates. The ability of this In2O3-x(OH)y/SiNW hybrid catalyst to perform the dual function of utilizing both light and heat energy provided by the broad-band solar irradiance to drive CO2 reduction reactions represents a general advance that is applicable to a wide range of catalysts in the field of solar fuels. PMID:27598429

  20. Nanostructured Indium Oxide Coated Silicon Nanowire Arrays: A Hybrid Photothermal/Photochemical Approach to Solar Fuels.

    Science.gov (United States)

    Hoch, Laura B; O'Brien, Paul G; Jelle, Abdinoor; Sandhel, Amit; Perovic, Douglas D; Mims, Charles A; Ozin, Geoffrey A

    2016-09-27

    The field of solar fuels seeks to harness abundant solar energy by driving useful molecular transformations. Of particular interest is the photodriven conversion of greenhouse gas CO2 into carbon-based fuels and chemical feedstocks, with the ultimate goal of providing a sustainable alternative to traditional fossil fuels. Nonstoichiometric, hydroxylated indium oxide nanoparticles, denoted In2O3-x(OH)y, have been shown to function as active photocatalysts for CO2 reduction to CO via the reverse water gas shift reaction under simulated solar irradiation. However, the relatively wide band gap (2.9 eV) of indium oxide restricts the portion of the solar irradiance that can be utilized to ∼9%, and the elevated reaction temperatures required (150-190 °C) reduce the overall energy efficiency of the process. Herein we report a hybrid catalyst consisting of a vertically aligned silicon nanowire (SiNW) support evenly coated by In2O3-x(OH)y nanoparticles that utilizes the vast majority of the solar irradiance to simultaneously produce both the photogenerated charge carriers and heat required to reduce CO2 to CO at a rate of 22.0 μmol·gcat(-1)·h(-1). Further, improved light harvesting efficiency of the In2O3-x(OH)y/SiNW films due to minimized reflection losses and enhanced light trapping within the SiNW support results in a ∼6-fold increase in photocatalytic conversion rates over identical In2O3-x(OH)y films prepared on roughened glass substrates. The ability of this In2O3-x(OH)y/SiNW hybrid catalyst to perform the dual function of utilizing both light and heat energy provided by the broad-band solar irradiance to drive CO2 reduction reactions represents a general advance that is applicable to a wide range of catalysts in the field of solar fuels.

  1. Tracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4T magnetic field

    CERN Document Server

    Gjersdal, H; Slaviec, T; Sandaker, H; Tsung, J; Bolle, E; Da Via, C; Wermes, N; Borri, M; Grinstein, S; Nordahl, P; Hugging, F; Dorholt, O; Rohne, O; La Rosa, A; Sjobaek, K; Tsybychev, D; Mastroberardino, A; Fazio, S; Su, D; Young, C; Hasi, J; Grenier, P; Hansson, P; Jackson, P; Kenney, C; Kocian, M

    2011-01-01

    A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400 pm long pixel side, this resulting in a p-n inter-electrode distance of similar to 71 mu m. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, charge sharing and tracking efficiency data were collected at zero and 15 angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014. (C) 2010 Elsevier B.V. All rights reserved.

  2. 一种基于共形阵的自适应单脉冲测角方法%Adaptive Monopulse Angle Measurement for Conformal Array

    Institute of Scientific and Technical Information of China (English)

    赵英俊; 李荣锋; 王永良; 刘维建

    2013-01-01

      When conformal antennas array perform angle measurement based on the approach of conventional adaptive monopulse,the curve of monopulse ratio may be seriously distorted if there is mainlobe jamming . Consequently,the precision of the angle measurement is poor .In this paper,we propose a method of adaptive monopulse angle measurement for conformal antennas array .The conventional adaptive sum beam is formed first.Then monopulse ratio restraint is posed,and the adaptive difference beam is formed .Finally,the outputs of the sum beam and difference beam are used to measure the angle .Simulation demonstrated that the proposed method can suppress the mainlobe jamming and guarantee good measurement precision of azimuth and evaluation angles .%  针对主瓣干扰背景下,当共形阵采用常规自适应单脉冲方法测角时,其单脉冲比曲线严重失真,导致测角精度严重下降的问题,提出了一种基于共形阵的自适应单脉冲测角方法。该方法首先对阵列进行常规自适应和波束形成,得到阵列和波束输出;然后通过施加单脉冲比约束求取自适应差波束权矢量,从而形成阵列差波束输出;最后利用输出的和、差波束实现测角。仿真结果表明,和常规方法相比,该方法能在抑制主瓣干扰的同时,较好地保证共形阵对目标方位角、俯仰角的测角精度。

  3. Integration of silicon-based neural probes and micro-drive arrays for chronic recording of large populations of neurons in behaving animals

    Science.gov (United States)

    Michon, Frédéric; Aarts, Arno; Holzhammer, Tobias; Ruther, Patrick; Borghs, Gustaaf; McNaughton, Bruce; Kloosterman, Fabian

    2016-08-01

    Objective. Understanding how neuronal assemblies underlie cognitive function is a fundamental question in system neuroscience. It poses the technical challenge to monitor the activity of populations of neurons, potentially widely separated, in relation to behaviour. In this paper, we present a new system which aims at simultaneously recording from a large population of neurons from multiple separated brain regions in freely behaving animals. Approach. The concept of the new device is to combine the benefits of two existing electrophysiological techniques, i.e. the flexibility and modularity of micro-drive arrays and the high sampling ability of electrode-dense silicon probes. Main results. Newly engineered long bendable silicon probes were integrated into a micro-drive array. The resulting device can carry up to 16 independently movable silicon probes, each carrying 16 recording sites. Populations of neurons were recorded simultaneously in multiple cortical and/or hippocampal sites in two freely behaving implanted rats. Significance. Current approaches to monitor neuronal activity either allow to flexibly record from multiple widely separated brain regions (micro-drive arrays) but with a limited sampling density or to provide denser sampling at the expense of a flexible placement in multiple brain regions (neural probes). By combining these two approaches and their benefits, we present an alternative solution for flexible and simultaneous recordings from widely distributed populations of neurons in freely behaving rats.

  4. Investigation of Very Fast Light Detectors: Silicon Photomultiplier and Micro PMT for a Cosmic Ray Array

    Science.gov (United States)

    Cervantes, Omar; Reyes, Liliana; Hooks, Tyler; Perez, Luis; Ritt, Stefan

    2016-03-01

    To construct a cosmic detector array using 4 scintillation detectors, we investigated 2 recent light sensor technologies from Hamamatsu, as possible readout detectors. First, we investigated several homemade versions of the multipixel photon counter (MPPC) light sensors. These detectors were either biased with internal or external high voltage power supplies. We made extensive measurements to confirm for the coincidence of the MPPC devices. Each sensor is coupled to a wavelength shifting fiber (WSF) that is embedded along a plastic scintillator sheet (30cmx60cmx1/4''). Using energetic cosmic rays, we evaluated several of these homemade detector modules placed above one another in a light proof enclosure. Next, we assembled 2 miniaturized micro photomultiplier (micro PMT), a device recently marketed by Hamamatsu. These sensors showed very fast response times. With 3 WSF embedded in scintillator sheets, we performed coincidence experiments. The detector waveforms were captured using the 5GS/sec domino ring sampler, the DRS4 and our workflow using the CERN PAW package and data analysis results would be presented. Title V Grant.

  5. Silicon on ceramic process. Silicon sheet growth development for the Large-Area Silicon Sheet Task of the Low-Cost Silicon Solar Array Project. Annual report No. 2, September 17, 1976--September 19, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Zook, J.D.; Heaps, J.D.; Maciolek, R.B.; Koepke, B.; Butter, C.D.; Schuldt, S.B.

    1977-09-30

    The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. In the past year significant progress was made in all areas of the program. The physical and chemical properties of the standard mullite refractory used for the majority of the coating runs (McDanel MV20 and Coors S1SI) have been characterized. A number of experimental compositions have been identified and procured from Coors. Characterization of the standard compositions revealed that the thermal expansion of mullite depends on both relative amounts of glass phase and on the impurity level in the glass. Since the thermal expansion in mullite exceeds that of silicon, the silicon coating should be in a state of compression. This was confirmed by x-ray measurements. After modifying and cleaning the dip-coating facility, silicon on ceramic (SOC) solar cells were fabricated which demonstrate that the SOC process can produce silicon of solar cell quality. SOC cells having 1 cm/sup 2/ active areas demonstrated measured conversion efficiencies as high as 7.2 percent. Typical open-ciruit voltages (V/sub oc/) and short-circuit current densities (J/sub sc/) were 0.51 volt and 20 mA/cm/sup 2/, respectively. Since the active surface of these solar cells is a highly reflective ''as-grown'' surface, one can expect improvement in J/sub sc/ after an anti-reflection (AR) coating is applied. Results of an economic analysis of the SOC process are presented.

  6. Optimal Tilt Angle of Photovoltaic Arrays and Economic Allocation of Energy Storage System on Large Oil Tanker Ship

    Directory of Open Access Journals (Sweden)

    Hai Lan

    2015-10-01

    Full Text Available This study optimizes the tilt angle of photovoltaic (PV panels on a large oil tanker ship system and considers the impact of partial shading to improve the performance of the PV system. This work presents a novel method that considers the difference between the expected and real outputs of PV modules to optimize the size of energy storage system (ESS. The method also takes into account the cost of wasted power, the capital cost of the system, fuel cost and the CO2 emissions. Unlike on land, power generation using a PV on a ship depends on the date, latitude and longitude of the navigation. Accordingly, this work considers a route from Dalian in China to Aden in Yemen, accounting for the seasonal and geographical variations of solar irradiation. This proposed method adopts five conditions associated with the navigation route to model the total shipload. Various cases are discussed in detail to demonstrate the effectiveness of the proposed algorithm.

  7. Effect of van der Waals forces on thermal conductance at the interface of a single-wall carbon nanotube array and silicon

    Directory of Open Access Journals (Sweden)

    Ya Feng

    2014-12-01

    Full Text Available Molecular dynamics simulations are performed to evaluate the effect of van der Waals forces among single-wall carbon nanotubes (SWNTs on the interfacial thermal conductance between a SWNT array and silicon substrate. First, samples of SWNTs vertically aligned on silicon substrate are simulated, where both the number and arrangement of SWNTs are varied. Results reveal that the interfacial thermal conductance of a SWNT array/Si with van der Waals forces present is higher than when they are absent. To better understand how van der Waals forces affect heat transfer through the interface between SWNTs and silicon, further constructs of one SWNT surrounded by different numbers of other ones are studied, and the results show that the interfacial thermal conductance of the central SWNT increases with increasing van der Waals forces. Through analysis of the covalent bonds and vibrational density of states at the interface, we find that heat transfer across the interface is enhanced with a greater number of chemical bonds and that improved vibrational coupling of the two sides of the interface results in higher interfacial thermal conductance. Van der Waals forces stimulate heat transfer at the interface.

  8. Silicon on-chip side-coupled high-Q micro-cavities for the multiplexing of high sensitivity photonic crystal integrated sensors array

    Science.gov (United States)

    Yang, Daquan; Wang, Chunhong; Yuan, Wei; Wang, Bo; Yang, Yujie; Ji, Yuefeng

    2016-09-01

    A novel two-dimensional (2D) silicon (Si) photonic crystal (PC) α-H0-slot micro-cavity with high Q-factor and high sensitivity (S) is presented. Based on the proposed α-H0-Slot micro-cavities, an optimal design of photonic crystal integrated sensors array (PC-ISA) on monolithic silicon on insulator (SOI) is displayed. By using finite-difference time-domain (FDTD) method, the simulation results demonstrate that both large S of 200 nm/RIU (RIU=refractive index unit) and high Q-factor >104 at telecom wavelength range can be achieved simultaneously. And the sensor figure of merit (FOM)>7000 is featured, an order of magnitude improvement over previous 2D PC sensors array. In addition, for the proposed 2D PC-ISA device, each sensor unit is shown to independently shift its resonance wavelength in response to the changes in refractive index (RI) and does not perturb the others. Thus, it is potentially an ideal platform for realizing ultra-compact lab-on-a-chip applications with dense arrays of functionalized spots for multiplexed sensing, and also can be used as an opto-fluidic architecture for performing highly parallel detection of biochemical interactions in aqueous environments.

  9. Preparation of well-aligned carbon nanotubes/silicon nanowires core-sheath composite structure arrays in porous anodic aluminum oxide templates

    Institute of Scientific and Technical Information of China (English)

    李梦轲; 陆梅; 王成伟; 力虎林

    2002-01-01

    The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiNWs) were deposited in the hollow cavities of CNTs. By using this method, CNTs/SiNWs core-sheath composite structure arrays were synthesized successfully. Growing structures and physical properties of the CNTs/SiNWs composite structure arrays were analyzed and researched by the scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction spectrum (XRD), respectively. The field emission (FE) behavior of the CNTs/SiNWs composite structure arrays was studied based on Fowler- Nordheim tunneling mechanism and current-voltage (I -V) curve. And the photoluminescence (PL) was also characterized. Significantly, the CNTs/SiNWs core-sheath composite structure nanowire fabricated by AAO template method is characteristic of a metal/semiconductor (M/S) behavior and can be utilized to synthesize nanoscale PN junction or Schottky diode device. This process also could be useful for the fabrication of SiNWs and other nanoscale core-sheath composite structure nanowires with chemically inert interfaces for nanoscale electronic and device applications where surface oxidation is undesirable. The diameters and lengths of nanoscale composite structure arrays can be dominated easily, and the experimental result shows that the curling and twisting structures are fewer than those prepared by other synthesized methods.

  10. Manipulation of extinction spectra of P3HT/PMMA medium arrays on silicon substrate containing self-assembled gold nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Ming-Chung [Department of Chemical and Materials Engineering, Chang Gung University, Taoyuan 333-02, Taiwan (China); Chen, Shih-Wen; Li, Jia-Han [Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei 106-17, Taiwan (China); Chou, Yi; Lin, Jhih-Fong [Department of Materials Science and Engineering, National Taiwan University, Taipei 106-17, Taiwan (China); Chen, Yang-Fang [Department of Physics, National Taiwan University, Taipei 106-17, Taiwan (China); Su, Wei-Fang, E-mail: suwf@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 106-17, Taiwan (China)

    2012-11-15

    In this study, we report a simple novel approach to modulate the extinction spectra of P3HT/PMMA by manipulating the medium arrays on a substrate that is coated with self-assembled gold nanoparticles. The 20 nm gold nanoparticles were synthesized and then self-assembled on the APTMS/silicon substrate surface by immersing the substrate into the gold colloid suspension. A high-resolution P3HT/PMMA photoluminescent electron beam resist was used to fabricate various square hole arrays on the substrate containing gold nanoparticles. The P3HT/PMMA medium composition causes the blue shifts in the extinction peaks of up to 40.6 nm by decreasing the period from 500 nm to 200 nm for P3HT/PMMA square hole arrays with a diameter of 100 nm. The magnitude of blue shift is directly proportional to the product of the changes of medium refractive index and the array structure factor. These peak shifts and intensity of extinction spectra for various P3HT/PMMA medium arrays are well described by the finite-difference time-domain (FDTD) simulation results. Since this simple cost-effective technique can tune the extinction spectrum of medium and adding the gold nanoparticles can give more functionalities for sensing applications, such as surface-enhanced Raman scattering (SERS), that provides good opportunities for the design and fabrication of new optoelectronic devices and sensors. Highlights: Black-Right-Pointing-Pointer We can tune the extinction spectra of P3HT/PMMA by manipulating the medium arrays. Black-Right-Pointing-Pointer These optical behaviors of P3HT/PMMA medium arrays are well described by FDTD simulation results. Black-Right-Pointing-Pointer Adding the Au nanoparticles can give more functionalities for sensing applications.

  11. The effect of lance geometry and carbon coating of silicon lances on propidium iodide uptake in lance array nanoinjection of HeLa 229 cells

    Science.gov (United States)

    Sessions, John W.; Lindstrom, Dallin L.; Hanks, Brad W.; Hope, Sandra; Jensen, Brian D.

    2016-04-01

    Connecting technology to biologic discovery is a core focus of non-viral gene therapy biotechnologies. One approach that leverages both the physical and electrical function of microelectromechanical systems (MEMS) in cellular engineering is a technology previously described as lance array nanoinjection (LAN). In brief, LAN consists of a silicon chip measuring 2 cm by 2 cm that has been etched to contain an array of 10 μm tall, solid lances that are spaced every 10 μm in a grid pattern. This array of lances is used to physically penetrate hundreds of thousands of cells simultaneously and to then electrically deliver molecular loads into cells. In this present work, two variables related to the microfabrication of the silicon lances, namely lance geometry and coating, are investigated. The purpose of both experimental variables is to assess these parameters’ effect on propidium iodide (PI), a cell membrane impermeable dye, uptake to injected HeLa 229 cells. For the lance geometry experimentation, three different microfabricated lance geometries were used which include a flat/narrow (FN, 1 μm diameter), flat/wide (FW, 2-2.5 μm diameter), and pointed (P, 1 μm diameter) lance geometries. From these tests, it was shown that the FN lances had a slightly better cell viability rate of 91.73% and that the P lances had the best PI uptake rate of 75.08%. For the lance coating experimentation, two different lances were fabricated, both silicon etched lances with some being carbon coated (CC) in a  LAN parameters for future transfection experimentation.

  12. A Fabrication Route for Arrays of Ultra-low-Noise MoAu Transition Edge Sensors on Thin Silicon Nitride for Space Applications

    OpenAIRE

    Glowacka, D. M.; Crane, M.; Goldie, D. J.; Withington, S.

    2014-01-01

    We describe a process route to fabricate arrays of Ultra-low-Noise MoAu Transition Edge Sensors (TESs). The low thermal conductance required for space applications is achieved using 200 nm-thick Silicon Nitride (SiNx ) patterned to form long-thin legs with widths of 2.1 {\\mu}m. Using bilayers formed on SiNx islands from films with 40 nm-thick Mo and Au thicknesses in the range 30 to 280 nm deposited by dc-sputtering in ultra-high vacuum we can obtain tunable transition temperatures in the ran...

  13. Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

    KAUST Repository

    Jahangir, Shafat

    2015-02-16

    The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

  14. Preliminary study on the use of ceramic nozzle arrays in gas dynamic lasers. Final report, 1 Jan--1 Dec 1974. [Silicon nitride

    Energy Technology Data Exchange (ETDEWEB)

    Jacobson, L.A.; Drewry, J.E.

    1975-04-01

    One of the more difficult and costly problem areas in the development of high energy gas dynamic lasers (GDL) has been the nozzle array which is used to achieve 'freezing' of the vibrational energy mode via rapid expansion of nitrogen from high temperature plenum conditions. A model gas dynamic laser nozzle array fabricated from hot-pressed silicon nitride components has been successfully tested under thermal cycling air flow conditions to temperatures of 1150 K. Excellent dimensional stability was shown by the center nozzle of the three nozzle assembly, and post-test examination of the components revealed no degradation of the materials. These findings suggest that ceramic materials offer important benefits to GDL systems.

  15. Preparation of well-aligned carbon nanotubes/silicon nanowires core-sheath composite structure arrays in porous anodic aluminum oxide templates

    Institute of Scientific and Technical Information of China (English)

    李梦轲; 力虎林; 陆梅; 王成伟

    2002-01-01

    The well-aligned carbon nanotubes (CNTs) arrays with opened ends were prepared in ordered pores of anodic aluminum oxide (AAO) template by the chemical vapor deposition (CVD) method. After then, silicon nanowires (SiNWs) were deposited in the hollow cavities of CNTs. By using this method, CNTs/SiNWs core-sheath composite structure arrays were synthesized successfully. Growing structures and physical properties of the CNTs/SiNWs composite structure arrays were analyzed and researched by the scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction spectrum (XRD), respectively. The field emission (FE) behavior of the CNTs/SiNWs composite structure arrays was studied based on Fowler-Nordheim tunneling mechanism and current-voltage (/-V) curve. And the photoluminescence (PL) was also characterized. Significantly, the CNTs/SiNWs core-sheath composite structure nanowire fabricated by AAO template method is characteristic of a metal/semiconductor (M/S) behavior and can be

  16. Lithographically patterned silicon nanostructures on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Megouda, Nacera [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Piret, Gaeelle; Galopin, Elisabeth; Coffinier, Yannick [Institut de Recherche Interdisciplinaire (IRI, USR 3078), Universite Lille1, Parc de la Haute Borne, 50 Avenue de Halley-BP 70478, 59658 Villeneuve d' Ascq and Institut d' Electronique, de Microelectronique et de Nanotechnologie (IEMN, CNRS-8520), Cite Scientifique, Avenue Poincare-B.P. 60069, 59652 Villeneuve d' Ascq (France); Hadjersi, Toufik, E-mail: hadjersi@yahoo.com [Unite de Developpement de la Technologie du Silicium (UDTS), 2 Bd. Frantz Fanon, B.P. 140 Alger-7 merveilles, Alger (Algeria); Elkechai, Omar [Faculte des Sciences, Universite Mouloud Mammeri, Tizi-Ouzou (Algeria); and others

    2012-06-01

    The paper reports on controlled formation of silicon nanostructures patterns by the combination of optical lithography and metal-assisted chemical dissolution of crystalline silicon. First, a 20 nm-thick gold film was deposited onto hydrogen-terminated silicon substrate by thermal evaporation. Gold patterns (50 {mu}m Multiplication-Sign 50 {mu}m spaced by 20 {mu}m) were transferred onto the silicon wafer by means of photolithography. The etching process of crystalline silicon in HF/AgNO{sub 3} aqueous solution was studied as a function of the silicon resistivity, etching time and temperature. Controlled formation of silicon nanowire arrays in the unprotected areas was demonstrated for highly resistive silicon substrate, while silicon etching was observed on both gold protected and unprotected areas for moderately doped silicon. The resulting layers were characterized using scanning electron microscopy (SEM).

  17. Ordered silicon nanowire arrays prepared by an improved nanospheres self-assembly in combination with Ag-assisted wet chemical etching

    Science.gov (United States)

    Jia, Guobin; Westphalen, Jasper; Drexler, Jan; Plentz, Jonathan; Dellith, Jan; Dellith, Andrea; Andrä, Gudrun; Falk, Fritz

    2016-04-01

    An improved Langmuir-Blodgett self-assembly process combined with Ag-assisted wet chemical etching for the preparation of ordered silicon nanowire arrays is presented in this paper. The new process is independent of the surface conditions (hydrophilic or hydrophobic) of the substrate, allowing for depositing a monolayer of closely packed polystyrene nanospheres onto any flat surface. A full control of the morphology of the silicon nanowire is achieved. Furthermore, it is observed that the formation of porous-Si at the tips of the nanowires is closely related to the release of Ag nanoparticles from the Ag mask during the etching, which subsequently redeposit on the surface initially free of Ag, and these Ag nanoparticles catalyze the etching of the tips and lead to the porous-Si formation. This finding will help to improve the resulting nano- and microstructures to get them free of pores, and renders it a promising technology for low-cost high throughput fabrication of specific optical devices, photonic crystals, sensors, MEMS, and NEMS by substituting the costly BOSCH process. It is shown that ordered nanowire arrays free of porous structures can be produced if all sources of Ag nanoparticles are excluded, and structures with aspect ratio more than 100 can be produced.

  18. Low Cost Solar Array Project. Feasibility of the silane process for producing semiconductor-grade silicon. Final report, October 1975-March 1979

    Energy Technology Data Exchange (ETDEWEB)

    1979-06-01

    The commercial production of low-cost semiconductor-grade silicon is an essential requirement of the JPL/DOE (Department of Energy) Low-Cost Solar Array (LSA) Project. A 1000-metric-ton-per-year commercial facility using the Union Carbide Silane Process will produce molten silicon for an estimated price of $7.56/kg (1975 dollars, private financing), meeting the DOE goal of less than $10/kg. Conclusions and technology status are reported for both contract phases, which had the following objectives: (1) establish the feasibility of Union Carbide's Silane Process for commercial application, and (2) develop an integrated process design for an Experimental Process System Development Unit (EPSDU) and a commercial facility, and estimate the corresponding commercial plant economic performance. To assemble the facility design, the following work was performed: (a) collection of Union Carbide's applicable background technology; (b) design, assembly, and operation of a small integrated silane-producing Process Development Unit (PDU); (c) analysis, testing, and comparison of two high-temperature methods for converting pure silane to silicon metal; and (d) determination of chemical reaction equilibria and kinetics, and vapor-liquid equilibria for chlorosilanes.

  19. MagicPlate-512: A 2D silicon detector array for quality assurance of stereotactic motion adaptive radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Petasecca, M., E-mail: marcop@uow.edu.au; Newall, M. K.; Aldosari, A. H.; Fuduli, I.; Espinoza, A. A.; Porumb, C. S.; Guatelli, S.; Metcalfe, P.; Lerch, M. L. F.; Rosenfeld, A. B. [Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2500, Australia and Illawarra Health Medical Research Institute, Wollongong, NSW 2522 (Australia); Booth, J. T.; Colvill, E. [School of Medicine, University of Sydney, Sydney, NSW 2006, Australia and Northern Sydney Cancer Centre, Royal North Shore Hospital, Sydney, NSW 2065 (Australia); Duncan, M.; Cammarano, D. [Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2500 (Australia); Carolan, M. [Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2500 (Australia); Illawarra Cancer Care Centre, Wollongong Hospital, Wollongong, NSW 2500 (Australia); Illawarra Health Medical Research Institute, Wollongong, NSW 2522 (Australia); Oborn, B. [Centre for Medical Radiation Physics, University of Wollongong, Wollongong, NSW 2500 (Australia); Illawarra Cancer Care Centre, Wollongong Hospital, Wollongong, NSW 2500 (Australia); Perevertaylo, V. [SPA-BIT, Kiev 02232 (Ukraine); Keall, P. J. [School of Medicine, University of Sydney, Sydney, NSW 2006 (Australia)

    2015-06-15

    Purpose: Spatial and temporal resolutions are two of the most important features for quality assurance instrumentation of motion adaptive radiotherapy modalities. The goal of this work is to characterize the performance of the 2D high spatial resolution monolithic silicon diode array named “MagicPlate-512” for quality assurance of stereotactic body radiation therapy (SBRT) and stereotactic radiosurgery (SRS) combined with a dynamic multileaf collimator (MLC) tracking technique for motion compensation. Methods: MagicPlate-512 is used in combination with the movable platform HexaMotion and a research version of radiofrequency tracking system Calypso driving MLC tracking software. The authors reconstruct 2D dose distributions of small field square beams in three modalities: in static conditions, mimicking the temporal movement pattern of a lung tumor and tracking the moving target while the MLC compensates almost instantaneously for the tumor displacement. Use of Calypso in combination with MagicPlate-512 requires a proper radiofrequency interference shielding. Impact of the shielding on dosimetry has been simulated by GEANT4 and verified experimentally. Temporal and spatial resolutions of the dosimetry system allow also for accurate verification of segments of complex stereotactic radiotherapy plans with identification of the instant and location where a certain dose is delivered. This feature allows for retrospective temporal reconstruction of the delivery process and easy identification of error in the tracking or the multileaf collimator driving systems. A sliding MLC wedge combined with the lung motion pattern has been measured. The ability of the MagicPlate-512 (MP512) in 2D dose mapping in all three modes of operation was benchmarked by EBT3 film. Results: Full width at half maximum and penumbra of the moving and stationary dose profiles measured by EBT3 film and MagicPlate-512 confirm that motion has a significant impact on the dose distribution. Motion

  20. MagicPlate-512: A 2D silicon detector array for quality assurance of stereotactic motion adaptive radiotherapy

    International Nuclear Information System (INIS)

    Purpose: Spatial and temporal resolutions are two of the most important features for quality assurance instrumentation of motion adaptive radiotherapy modalities. The goal of this work is to characterize the performance of the 2D high spatial resolution monolithic silicon diode array named “MagicPlate-512” for quality assurance of stereotactic body radiation therapy (SBRT) and stereotactic radiosurgery (SRS) combined with a dynamic multileaf collimator (MLC) tracking technique for motion compensation. Methods: MagicPlate-512 is used in combination with the movable platform HexaMotion and a research version of radiofrequency tracking system Calypso driving MLC tracking software. The authors reconstruct 2D dose distributions of small field square beams in three modalities: in static conditions, mimicking the temporal movement pattern of a lung tumor and tracking the moving target while the MLC compensates almost instantaneously for the tumor displacement. Use of Calypso in combination with MagicPlate-512 requires a proper radiofrequency interference shielding. Impact of the shielding on dosimetry has been simulated by GEANT4 and verified experimentally. Temporal and spatial resolutions of the dosimetry system allow also for accurate verification of segments of complex stereotactic radiotherapy plans with identification of the instant and location where a certain dose is delivered. This feature allows for retrospective temporal reconstruction of the delivery process and easy identification of error in the tracking or the multileaf collimator driving systems. A sliding MLC wedge combined with the lung motion pattern has been measured. The ability of the MagicPlate-512 (MP512) in 2D dose mapping in all three modes of operation was benchmarked by EBT3 film. Results: Full width at half maximum and penumbra of the moving and stationary dose profiles measured by EBT3 film and MagicPlate-512 confirm that motion has a significant impact on the dose distribution. Motion

  1. Performance of ultra-small silicon photomultiplier array with active area of 0.12 mm×0.12 mm

    Energy Technology Data Exchange (ETDEWEB)

    Yue, Wang; Zongde, Chen; Chenhui, Li; Ran, He; Shenyuan, Wang; Baicheng, Li; Ruiheng, Wang; Kun, Liang, E-mail: lk@bnu.edu.cn; Ru, Yang; Dejun, Han

    2015-07-01

    We report the performance of an ultra-small silicon photomultiplier (SiPM) line array with 7 elements of 0.12×0.12 mm{sup 2} in active area, 0.2 mm in pitch and 120 micro cells in one element. The device features an epitaxial bulk quenching resistor concept, demonstrated high geometrical fill factor of 41% and photon detection efficiency (PDE) of 25.4% in the wavelength region between 430 nm and 480 nm while retaining high micro cell density around 10 000 mm{sup −2} and ~3 ns FWHM of dark pulses width; it also demonstrated dark count rate of less than 28.7 kHz, optical crosstalk of the order of 2% to 4%, and excellent photon number discrimination. A 0.15 mm×1.6 mm×1.6 mm lutetium yttrium oxyorthosilicate (LYSO) crystal, corresponding to the width, length and height respectively, was successfully coupled to the 1×7 SiPM array for possible ultra-highly resolved positron emission tomography (PET) applications. This novel type of device has advantages particularly for small active area since the performances, such as PDE and response speed is one of the best among SiPMs with similarly high density of micro cells. It may pave a way for this type of SiPM as a promising pixel position sensitive device in imaging sensor applications. - Highlights: • The ultra-small SiPM line array with active area of 0.12 mm×0.12 mm was presented. • The ultra-small SiPM employs the bulk silicon structure as quenching resistor. • A considerable dynamic range and PDE over 25.4% @ 430 nm to 480 nm were characterized.

  2. Performance of ultra-small silicon photomultiplier array with active area of 0.12 mm×0.12 mm

    International Nuclear Information System (INIS)

    We report the performance of an ultra-small silicon photomultiplier (SiPM) line array with 7 elements of 0.12×0.12 mm2 in active area, 0.2 mm in pitch and 120 micro cells in one element. The device features an epitaxial bulk quenching resistor concept, demonstrated high geometrical fill factor of 41% and photon detection efficiency (PDE) of 25.4% in the wavelength region between 430 nm and 480 nm while retaining high micro cell density around 10 000 mm−2 and ~3 ns FWHM of dark pulses width; it also demonstrated dark count rate of less than 28.7 kHz, optical crosstalk of the order of 2% to 4%, and excellent photon number discrimination. A 0.15 mm×1.6 mm×1.6 mm lutetium yttrium oxyorthosilicate (LYSO) crystal, corresponding to the width, length and height respectively, was successfully coupled to the 1×7 SiPM array for possible ultra-highly resolved positron emission tomography (PET) applications. This novel type of device has advantages particularly for small active area since the performances, such as PDE and response speed is one of the best among SiPMs with similarly high density of micro cells. It may pave a way for this type of SiPM as a promising pixel position sensitive device in imaging sensor applications. - Highlights: • The ultra-small SiPM line array with active area of 0.12 mm×0.12 mm was presented. • The ultra-small SiPM employs the bulk silicon structure as quenching resistor. • A considerable dynamic range and PDE over 25.4% @ 430 nm to 480 nm were characterized

  3. Exploration of maximum count rate capabilities for large-area photon counting arrays based on polycrystalline silicon thin-film transistors

    Science.gov (United States)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua

    2016-03-01

    Pixelated photon counting detectors with energy discrimination capabilities are of increasing clinical interest for x-ray imaging. Such detectors, presently in clinical use for mammography and under development for breast tomosynthesis and spectral CT, usually employ in-pixel circuits based on crystalline silicon - a semiconductor material that is generally not well-suited for economic manufacture of large-area devices. One interesting alternative semiconductor is polycrystalline silicon (poly-Si), a thin-film technology capable of creating very large-area, monolithic devices. Similar to crystalline silicon, poly-Si allows implementation of the type of fast, complex, in-pixel circuitry required for photon counting - operating at processing speeds that are not possible with amorphous silicon (the material currently used for large-area, active matrix, flat-panel imagers). The pixel circuits of two-dimensional photon counting arrays are generally comprised of four stages: amplifier, comparator, clock generator and counter. The analog front-end (in particular, the amplifier) strongly influences performance and is therefore of interest to study. In this paper, the relationship between incident and output count rate of the analog front-end is explored under diagnostic imaging conditions for a promising poly-Si based design. The input to the amplifier is modeled in the time domain assuming a realistic input x-ray spectrum. Simulations of circuits based on poly-Si thin-film transistors are used to determine the resulting output count rate as a function of input count rate, energy discrimination threshold and operating conditions.

  4. Phase 2, automated array assembly, Task IV, Low Cost Silicon Solar Array Project. Quarterly report No. 1, November 1, 1977--January 28, 1978

    Energy Technology Data Exchange (ETDEWEB)

    1978-01-01

    Technical and economic evaluations are discussed on the selected process sequence consisting of: starting material CZ silicon wafers, as sawn, 3 inch diameter; texture etch with NaOH; ion implantation of phosphorus for junction formation; laser annealing; screen printing of ohmic contacts; spray-on AR coating; module assembly. Process verifications have commenced on the texturizing and ion implanting processes. Argon, ruby and YAG lasers were determined to be best suited for laser annealing having wavelengths of .5 ..mu..m, .694 ..mu..m and 1.06 ..mu..m, respectively. Arrangements are being made to utilize appropriate lasers.

  5. Silicon-on-ceramic process: silicon sheet growth and device development for the Large-Area Silicon Sheet and Cell Development Tasks of the Low-Cost Solar Array Project. Quarterly report No. 11, January 1-March 30, 1979

    Energy Technology Data Exchange (ETDEWEB)

    Chapman, P.W.; Zook, J.D.; Heaps, J.D.; Grung, B.L.; Koepke, B.; Schuldt, S.B.

    1979-04-30

    The purpose of the research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating inexpensive ceramic substrates with a thin layer of polycrystalline silicon. The coating methods to be developed are directed toward a minimum-cost process for producing solar cells with a terrestrial conversion efficiency of 12 percent or greater. By applying a graphite coating to one face of a ceramic substrate, molten silicon can be caused to wet only that graphite-coated face and produce uniform thin layers of large-grain polycrystalline silicon; thus, only a minimal quantity of silicon is consumed. A dip-coating method for putting silicon on ceramic (SOC) has been shown to produce solar-cell-quality sheet silicon. This method and a continuous coating process also being investigated have excellent scale-up potential which offers an outstanding, cost-effective way to manufacture large-area solar cells. Results and accomplishments are described.

  6. Enhanced amorphous silicon technology for 320 x 240 microbolometer arrays with a pitch of 35 μm

    Science.gov (United States)

    Mottin, Eric; Martin, Jean-Luc; Ouvrier-Buffet, Jean-Louis; Vilain, Michel; Bain, Astrid; Yon, Jean-Jacques; Tissot, Jean-Luc; Chatard, Jean-Pierre

    2001-10-01

    LETI LIR has been involved in Amorphous Silicon uncooled microbolometer development for years. This technology is now in production at Sofradir and first delivery have already been done to customers. From our background in modeling and material mastering LETI/LIR concentrate now on performance enhancement. This is a key point for cost reduction due to the fact that signal to noise ratio enhancement will allow us to decrease the pitch. A new approach of packaging is also described in this paper and first results are displayed. A new technological stack of amorphous silicon fully compatible with industrial process is presented. Electro-optical results obtained from an IRCMOS 320 X 240 with 35 μm pitch are presented. NETD close to 35 mK has been obtained with our new embodiment of amorphous silicon microbolometer technology.

  7. The evaporation and wetting dynamics of sessile water droplets on submicron-scale patterned silicon hydrophobic surfaces

    International Nuclear Information System (INIS)

    The evaporation characteristics of 1 µl sessile water droplets on hydrophobic surfaces are experimentally examined. The proposed hydrophobic surfaces are composed of submicron diameter and 4.2 µm height silicon post arrays. A digital image analysis algorithm was developed to obtain time-dependent contact angles, contact diameters, and center heights for both non-patterned polydimethylsiloxane (PDMS) surfaces and patterned post array surfaces, which have the same hydrophobic contact angles. While the contact angles exhibit three distinct stages during evaporation in the non-patterned surface case, those in the patterned silicon post array surface case decrease linearly. In the case of post array hydrophobic surfaces, the initial contact diameter remains unchanged until the portion of the droplet above the posts completely dries out. The edge shrinking velocity of the droplet shows nonlinear characteristics, and the velocity magnitude increases rapidly near the last stage of evaporation.

  8. Silicon-on ceramic process. Silicon sheet growth and device developmentt for the Large-Area Silicon Sheet Task of the Low-Cost Solar Array Project. Quarterly report No. 13, October 1-December 31, 1979

    Energy Technology Data Exchange (ETDEWEB)

    Chapman, P W; Zook, J D; Grung, B L; McHenry, K; Schuldt, S B

    1980-02-15

    Research on the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating inexpensive ceramic substrates with a thin layer of polycrystalline silicon is reported. The coating methods to be developed are directed toward a minimum-cost process for producing solar cells with a terrestrial conversion efficiency of 11 percent or greater. By applying a graphite coating to one face of a ceramic substrate, molten silicon can be caused to wet only that graphite-coated face and produce uniform thin layers of large-grain polycrystalline silicon; thus, only a minimal quantity of silicon is consumed. A variety of ceramic materials have been dip coated with silicon. The investigation has shown that mullite substrates containing an excess of SiO/sub 2/ best match the thermal expansion coefficient of silicon and hence produce the best SOC layers. With such substrates, smooth and uniform silicon layers 25 cm/sup 2/ in area have been achieved with single-crystal grains as large as 4 mm in width and several cm in length. Crystal length is limited by the length of the substrate. The thickness of the coating and the size of the crystalline grains are controlled by the temperature of the melt and the rate at which the substrate is withdrawn from the melt. The solar-cell potential of this SOC sheet silicon is promising. To date, solar cells with areas from 1 to 10 cm/sup 2/ have been fabricated from material with an as-grown surface. Conversion efficiencies of about 10 percent with antireflection (AR) coating have been achieved. Such cells typically have open-circuit voltage and short-circuit current densities of 0.55V and 23 mA/cm/sup 2/, respectively.

  9. Efficient silicon PIC mode multiplexer using grating coupler array with aluminum mirror for few-mode fiber

    DEFF Research Database (Denmark)

    Ding, Yunhong; Yvind, Kresten

    2015-01-01

    We demonstrate a silicon PIC mode multiplexer using grating couplers. An aluminum mirror is introduced for coupling efficiency improvement. A highest coupling efficiency of –10.6 dB with 3.7 dB mode dependent coupling loss is achieved.......We demonstrate a silicon PIC mode multiplexer using grating couplers. An aluminum mirror is introduced for coupling efficiency improvement. A highest coupling efficiency of –10.6 dB with 3.7 dB mode dependent coupling loss is achieved....

  10. Top-down fabrication of very-high density vertically stacked silicon nanowire arrays with low temperature budget

    OpenAIRE

    Zervas, Michail; Sacchetto, Davide; De Micheli, Giovanni; Leblebici, Yusuf

    2011-01-01

    We report on a top-down complementary metal oxide semiconductor (CMOS) compatible fabrication method of ultra-high density Si nanowire (SiNW) arrays using a time multiplexed alternating process (TMAP) with low temperature budget. The flexibility of the fabrication methodology is demonstrated for curved and straight SiNW arrays with different shapes and levels. Ultra-high density SiNW arrays with round or rhombic cross-sections diameters as low as 10 nm are demonstrated for vertical and horizo...

  11. A silicon based implantable microelectrode array for electrophysiological and dopamine recording from cortex to striatum in the non-human primate brain.

    Science.gov (United States)

    Zhang, Song; Song, Yilin; Wang, Mixia; Zhang, Zhiming; Fan, Xinyi; Song, Xianteng; Zhuang, Ping; Yue, Feng; Chan, Piu; Cai, Xinxia

    2016-11-15

    Dual-mode, multielectrode recordings have become routine in rodent neuroscience research and have recently been adapted to the non-human primate. However, robust and reliable application of acute, multielectrode recording methods in monkeys especially for deep brain nucleus research remains a challenge. In this paper, We described a low cost silicon based 16-site implantable microelectrode array (MEA) chip fabricated by standard lithography technology for in vivo test. The array was 25mm long and designed to use in non-human primate models, for electrophysiological and electrochemical recording. We presented a detailed protocol for array fabrication, then showed that the device can record Spikes, LFPs and dopamine (DA) variation continuously from cortex to striatum in an esthetized monkey. Though our experiment, high-quality electrophysiological signals were obtained from the animal. Across any given microelectrode, spike amplitudes ranged from 70 to 300μV peak to peak, with a mean signal-to-noise ratio of better than 5:1. Calibration results showed the MEA probe had high sensitivity and good selectivity for DA. The DA concentration changed from 42.8 to 481.6μM when the MEA probe inserted from cortex into deep brain nucleus of striatum, which reflected the inhomogeneous distribution of DA in brains. Compared with existing methods allowing single mode (electrophysiology or electrochemistry) recording. This system is designed explicitly for dual-mode recording to meet the challenges of recording in non-human primates. PMID:27155116

  12. L型阵列天线的测频测角实现研究%Implementation of Frequency and Angle Measurements of L-shaped Array Antenna

    Institute of Scientific and Technical Information of China (English)

    谭俊锋; 王建涛; 闫晓鹏

    2012-01-01

    基于构建的FPGA协同DSP(FPGA+DSP)异构系统提出了一种L型阵列天线的测频和测角实现方案,研究了谱峰搜索多重信号分类(MUSIC)算法和酉矩阵求根MUSIC算法的实现.2种算法的实测数据试验结果表明,谱峰搜索MUSIC算法实现简单,但处理精度受限于频域和空域的搜索精度.在同一精度量级时,酉矩阵求根MUSIC算法的处理时间只有谱峰搜索MUSIC算法的62.6%,且可以避免多维搜索,还对宽带信号具有一定的分辨率,具有较好的工程鲁棒性.%The implementation scheme of frequency and angle measurements of L-array based on the designed FPGA+DSP system is studied in this paper. The peak searching MUSIC algorithm and the unitary transformation root MUSIC algorithm are both implemented in DSP with real data, and the processing results show that the time of unitary transformation root MUSIC algorithm is faster than that of peak searching MUSIC algorithm by 62.6% at the same precision level. The unitary transformation root MUSIC algorithm can also find the wideband signal in the experimentation, which has better robustness of engineering.

  13. High-precision drop shape analysis (HPDSA) of quasistatic contact angles on silanized silicon wafers with different surface topographies during inclining-plate measurements: Influence of the surface roughness on the contact line dynamics

    Science.gov (United States)

    Heib, F.; Hempelmann, R.; Munief, W. M.; Ingebrandt, S.; Fug, F.; Possart, W.; Groß, K.; Schmitt, M.

    2015-07-01

    Contact angles and wetting of solid surfaces are strongly influenced by the physical and chemical properties of the surfaces. These influence quantities are difficult to distinguish from each other if contact angle measurements are performed by measuring only the advancing θa and the receding θr contact angle. In this regard, time-dependent water contact angles are measured on two hydrophobic modified silicon wafers with different physical surface topographies. The first surface is nearly atomically flat while the second surface is patterned (alternating flat and nanoscale rough patterns) which is synthesized by a photolithography and etching procedure. The different surface topographies are characterized with atomic force microscopy (AFM), Fourier transform infrared reflection absorption spectroscopy (FTIRRAS) and Fourier transform infrared attenuated total reflection spectroscopy (FTIR-ATR). The resulting set of contact angle data obtained by the high-precision drop shape analysis approach is further analyzed by a Gompertzian fitting procedure and a statistical counting procedure in dependence on the triple line velocity. The Gompertzian fit is used to analyze overall properties of the surface and dependencies between the motion on the front and the back edge of the droplets. The statistical counting procedure results in the calculation of expectation values E(p) and standard deviations σ(p) for the inclination angle φ, contact angle θ, triple line velocity vel and the covered distance of the triple line dis relative to the first boundary points XB,10. Therefore, sessile drops during the inclination of the sample surface are video recorded and different specific contact angle events in dependence on the acceleration/deceleration of the triple line motion are analyzed. This procedure results in characteristically density distributions in dependence on the surface properties. The used procedures lead to the possibility to investigate influences on contact

  14. The effect of lance geometry and carbon coating of silicon lances on propidium iodide uptake in lance array nanoinjection of HeLa 229 cells

    International Nuclear Information System (INIS)

    Connecting technology to biologic discovery is a core focus of non-viral gene therapy biotechnologies. One approach that leverages both the physical and electrical function of microelectromechanical systems (MEMS) in cellular engineering is a technology previously described as lance array nanoinjection (LAN). In brief, LAN consists of a silicon chip measuring 2 cm by 2 cm that has been etched to contain an array of 10 μm tall, solid lances that are spaced every 10 μm in a grid pattern. This array of lances is used to physically penetrate hundreds of thousands of cells simultaneously and to then electrically deliver molecular loads into cells. In this present work, two variables related to the microfabrication of the silicon lances, namely lance geometry and coating, are investigated. The purpose of both experimental variables is to assess these parameters’ effect on propidium iodide (PI), a cell membrane impermeable dye, uptake to injected HeLa 229 cells. For the lance geometry experimentation, three different microfabricated lance geometries were used which include a flat/narrow (FN, 1 μm diameter), flat/wide (FW, 2–2.5 μm diameter), and pointed (P, 1 μm diameter) lance geometries. From these tests, it was shown that the FN lances had a slightly better cell viability rate of 91.73% and that the P lances had the best PI uptake rate of 75.08%. For the lance coating experimentation, two different lances were fabricated, both silicon etched lances with some being carbon coated (CC) in a  <100 nm layer of carbon and the other lances being non-coated (Si). Results from this experiment showed no significant difference between lance types at three different nanoinjection protocols (0V, +1.5V DC, and  +5V Pulsed) for both cell viability and PI uptake rates. One exception to this is the comparison of CC/5V Pul and Si/5V Pul samples, where the CC/5V Pul samples had a cell viability rate 5% higher. Both outcomes were unexpected and reveal how to better

  15. A low-temperature polycrystalline-silicon thin-film transistor micro-manipulation array with indium tin oxide micro-coils and real-time detection

    International Nuclear Information System (INIS)

    This study proposes an array for a bio-handling system consisting of microcoils on top of photodetectors fabricated by low-temperature polycrystalline-silicon thin-film transistor (LTPS-TFT) technology on a glass substrate. Using magnetic beads as the medium, the proposed system can simultaneously monitor and manipulate micrometer-sized bio-samples. In a manipulation system based on magnetic force, photo-detecting is a reliable method, immune to the interference caused by electromagnetic fields. Under 480 lux ambient white light, the sensor can detect a microbead as small as 23 µm in diameter with detectable output difference. It provides a new, easier way for handling samples on a small chip

  16. Silicon-on ceramic process. Silicon sheet growth and device development for the large-area silicon sheet and cell development tasks of the low-cost solar array project. Quarterly report No. 12, April 2, 1979-June 29, 1979

    Energy Technology Data Exchange (ETDEWEB)

    Chapman, P.W.; Zook, J.D.; Heaps, J.D.; Grung, B.L.; Koepke, B.; Schuldt, S.B.

    1979-07-31

    The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon. We plan to do this by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. During the quarter, significant progress was demonstrated in several areas: (1) a 10-cm/sup 2/ cell having 9.9 percent conversion efficiency (AM1, AR) was fabricated; (2) the Honeywall-sponsored SCIM coating development succeeded in producing a 225-cm/sup 2/ layer of sheet silicon (18 inches x 2 inches); and (3) 100 ..mu..m-thick coatings at pull speed of 0.15 cm/sec wer$obta9ned, although apoproximately 50 percent of the layer exhibited dendritic growth. Other results and accomplishments during the quarter are reported in detail. (WHK)

  17. Dip coating process. Silicon sheet growth development for the large-area silicon sheet task of the Low Cost Silicon Solar Array Project. Quarterly report No. 5, December 18, 1976--March 21, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Zook, J.D.; Heaps, J.D.; Maciolek, R.B.; Koepke, B.; Butter, C.D.; Schuldt, S.B.

    1977-03-31

    Ceramic substrates can be coated with a thin layer of large-grain polycrystalline silicon by a dip-coating process. The silicon-on-ceramic (SOC) material appears to be quite promising as a low-cost cell material but requires somewhat special fabrication procedure since the contacts to both the n- and p-layers are now made on the front surface. Solar cells have been made on SOC material and on single-crystal control samples. Photodiodes 0.01 to 0.1 cm/sup 2/ made on substrates coated with vitreous carbon prior to dip coating with silicon showed the best efficiency of SOC material to date, namely over 6 percent uncorrected and about 12 percent inherent efficiency. Etching procedures have indicated that the dislocation density varies from almost 10/sup 7/ cm/sup -2/ to almost dislocation-free material, assuming that all etch pits are due to dislocations. EBIC measurements procedures were also improved, and it was found that diodes appear to be fairly uniform in EBIC response. A new SOC coating facility is being designed which will coat larger substrates in a continuous manner. The purpose is to minimize the contamination problem by reducing the contact area of the substrate with molten silicon. By having much larger throughput, it will also demonstrate the scale-up potential of the silicon-on-ceramic process. Portions of the new facility are under construction. An attempt has been made to model the economics of a large-scale facility for coating ceramic panels with silicon. A first iteration based on available parameters estimates showed that major cost items were poly Si ($2.90 per square meter), labor and burden ($2.50 per square meter), and the ceramic substrate ($2.50 per square meter), for a total price of about $11 per square meter.

  18. Silicon on ceramic process. Silicon sheet growth for Large-Area Silicon Sheet Task of the Low-Cost Solar Array Project. Annual report No. 4, September 29, 1978-September 30, 1979

    Energy Technology Data Exchange (ETDEWEB)

    Chapman, P W; Zook, J D; Heaps, J D; Koepke, B; Grung, B L; Schuldt, S B

    1979-10-31

    The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. The effort is divided into several areas of investigation in order to most efficiently meet the goals of the program. These areas include: (1) dip-coating; (2) continuous coating; (3) material characterization; (4) cell fabrication; and (5) theoretical analysis. Progress in all areas of the program is reported in detail. (WHK)

  19. A Fabrication Route for Arrays of Ultra-low-Noise MoAu Transition Edge Sensors on Thin Silicon Nitride for Space Applications

    CERN Document Server

    Glowacka, D M; Goldie, D J; Withington, S

    2014-01-01

    We describe a process route to fabricate arrays of Ultra-low-Noise MoAu Transition Edge Sensors (TESs). The low thermal conductance required for space applications is achieved using 200 nm-thick Silicon Nitride (SiNx ) patterned to form long-thin legs with widths of 2.1 {\\mu}m. Using bilayers formed on SiNx islands from films with 40 nm-thick Mo and Au thicknesses in the range 30 to 280 nm deposited by dc-sputtering in ultra-high vacuum we can obtain tunable transition temperatures in the range 700 to 70 mK. The sensors use large-area absorbers fabricated from high resistivity, thin-film beta-phase Ta to provide impedance-matching to incident radiation. The absorbers are patterned to reduce the heat capacity associated with the nitride support structure and include Au thermalizing features to assist the heat flow into the TES. Arrays of 400 detectors at the pixel spacing required for the long-wavelength band of the far-infrared instrument SAFARI are now being fabricated. Device yields approaching 99% are achi...

  20. Dip-coating process. Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project. Quarterly report No. 7

    Energy Technology Data Exchange (ETDEWEB)

    Zook, J.D.; Heaps, J.D.; Maciolek, R.B.; Koepke, B.; Butter, C.D.; Schuldt, S.B.

    1977-12-30

    The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. During the past quarter, significant progress was demonstrated in several areas. Seeded growth of silicon-on-ceramic (SOC) with an EFG ribbon seed was demonstrated. Different types of mullite received from Coors were successfully coated with silicon. A new method of deriving minority carrier diffusion length, L/sub n/, from spectral response measurements was evaluated. ECOMOD cost projections were found to be in good agreement with the interim SAMIS method proposed by JPL. On the less positive side, there was a decrease in cell performance which is believed to be due to an unidentified source of impurities. Also, operation of the new coating system fell behind schedule but is expected to improve in the coming quarter, since construction has now been completed.

  1. High-precision drop shape analysis (HPDSA) of quasistatic contact angles on silanized silicon wafers with different surface topographies during inclining-plate measurements: Influence of the surface roughness on the contact line dynamics

    International Nuclear Information System (INIS)

    Highlights: • Analysis of the triple line motion on surfaces with nanoscale surface topographies. • Analysis of the triple line motion is performed in sub-pixel resolution. • A special fitting and statistical approach for contact angle analysis is applied. • The analyses result set of contact angle data which is independent of “user-skills”. • Characteristically density distributions in dependence on the surface properties. - Abstract: Contact angles and wetting of solid surfaces are strongly influenced by the physical and chemical properties of the surfaces. These influence quantities are difficult to distinguish from each other if contact angle measurements are performed by measuring only the advancing θa and the receding θr contact angle. In this regard, time-dependent water contact angles are measured on two hydrophobic modified silicon wafers with different physical surface topographies. The first surface is nearly atomically flat while the second surface is patterned (alternating flat and nanoscale rough patterns) which is synthesized by a photolithography and etching procedure. The different surface topographies are characterized with atomic force microscopy (AFM), Fourier transform infrared reflection absorption spectroscopy (FTIRRAS) and Fourier transform infrared attenuated total reflection spectroscopy (FTIR-ATR). The resulting set of contact angle data obtained by the high-precision drop shape analysis approach is further analyzed by a Gompertzian fitting procedure and a statistical counting procedure in dependence on the triple line velocity. The Gompertzian fit is used to analyze overall properties of the surface and dependencies between the motion on the front and the back edge of the droplets. The statistical counting procedure results in the calculation of expectation values E(p) and standard deviations σ(p) for the inclination angle φ, contact angle θ, triple line velocity vel and the covered distance of the triple line dis

  2. Dip coating process. Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project. Quarterly report No. 6, March 22, 1977--June 24, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Zook, J.D.; Heaps, J.D.; Maciolek, R.B.; Koepke, B.; Butter, C.D.; Schuldt, S.B.

    1977-06-30

    The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Significant progress was made in silicon on ceramic (SOC) solar cell performance. SOC cells having 1 cm/sup 2/ active areas demonstrated measured conversion efficiencies as high as 7.2 percent. Typical open circuit voltages (V/sub oc/) and short circuit current densities (J/sub sc/) were 0.51 volt and 20 mA/cm/sup 2/ respectively. Since the active surface of these solar cells is a highly reflective ''as-grown'' surface, one can expect improvement in J/sub sc/ after an anti-reflection (AR) coating is applied. It is significant that single-crystal comparison cells, also measured without benefit of an AR coating, had efficiencies in the 8.5 percent range with typical V/sub oc/'s and J/sub sc/'s of 0.54 volt and 23 mA/cm/sup 2/, respectively. Therefore, improvement in cell design and junction diffusion techniques should increase the efficiency of both the SOC and single-crystal cells. During this quarter the dip coating facility was inadvertently contaminated, but has since been restored to a purity level exceeding its original state. With this facility, silicon coatings were grown with a single-crystal seed attached to the substrate. Single-crystal silicon was not forthcoming, but the results were nonetheless encouraging. Several of the carbon coating types tried appear promising, including one which has high purity and can be applied uniformly by swab or airbrush.

  3. A 4[pi] charged-particle detector array for light-ion-induced nuclear fragmentation studies

    Energy Technology Data Exchange (ETDEWEB)

    Kwiatkowski, K. (Departments of Chemistry and Physics and IUCF, Indiana University, Bloomington, IN 47405 (United States)); Alexander, A. (Departments of Chemistry and Physics and IUCF, Indiana University, Bloomington, IN 47405 (United States)); Bracken, D.S. (Departments of Chemistry and Physics and IUCF, Indiana University, Bloomington, IN 47405 (United States)); Brzychczyk, J. (Departments of Chemistry and Physics and IUCF, Indiana University, Bloomington, IN 47405 (United States)); Dorsett, J. (Departments of Chemistry and Physics and IUCF, Indiana University, Bloomington, IN 47405 (United States)); Ensman, R. (Departments of Chemistry and Physics and IUCF, Indiana University, Bloomington, IN 47405 (United States)); Foxford, E.R. (Departments of Chemistry and Physics and IUCF, Indiana University, Bloomington, IN 47405 (United States)); Hamilton, T. (Departments of Chemistry and Physics and IUCF, Indiana University, Bloomington, IN 47405 (United States)); Komisarcik, K. (Dep

    1994-12-30

    Operating characteristics of the Indiana Silicon Sphere 4[pi] detector array are outlined. The detector geometry is spherical, with 90 telescopes in the forward hemisphere and 72 at backward angles, covering a total solid angle of 74% of 4[pi]. Each telescope consists of a simple gas-ion chamber, operated with C[sub 3]F[sub 8] gas, followed by a 0.5 mm thick ion-implanted silicon detector and a 28 mm CsI(Tl) crystal, readout by a photodiode. Custom-built bias supplies and NIM preamp/shaper modules were used in conjunction with commercial CFD, TDC and ADC CAMAC units. ((orig.))

  4. A 4π charged-particle detector array for light-ion-induced nuclear fragmentation studies

    International Nuclear Information System (INIS)

    Operating characteristics of the Indiana Silicon Sphere 4π detector array are outlined. The detector geometry is spherical, with 90 telescopes in the forward hemisphere and 72 at backward angles, covering a total solid angle of 74% of 4π. Each telescope consists of a simple gas-ion chamber, operated with C3F8 gas, followed by a 0.5 mm thick ion-implanted silicon detector and a 28 mm CsI(Tl) crystal, readout by a photodiode. Custom-built bias supplies and NIM preamp/shaper modules were used in conjunction with commercial CFD, TDC and ADC CAMAC units. ((orig.))

  5. Low cost silicon solar array project silicon materials task: Establishment of the feasibility of a process capable of low-cost, high volume production of silane (step 1) and the pyrolysis of silane to semiconductor-grade silicon (step 2)

    Science.gov (United States)

    Breneman, W. C.; Cheung, H.; Farrier, E. G.; Morihara, H.

    1977-01-01

    A quartz fluid bed reactor capable of operating at temperatures of up to 1000 C was designed, constructed, and successfully operated. During a 30 minute experiment, silane was decomposed within the reactor with no pyrolysis occurring on the reactor wall or on the gas injection system. A hammer mill/roller-crusher system appeared to be the most practical method for producing seed material from bulk silicon. No measurable impurities were detected in the silicon powder produced by the free space reactor, using the cathode layer emission spectroscopic technique. Impurity concentration followed by emission spectroscopic examination of the residue indicated a total impurity level of 2 micrograms/gram. A pellet cast from this powder had an electrical resistivity of 35 to 45 ohm-cm and P-type conductivity.

  6. Development of a Silicon Drift Detector Array: An X-ray Fluorescence Spectrometer for Remote Surface Mapping

    Energy Technology Data Exchange (ETDEWEB)

    Gaskin, J.A.; De Geronimo, G.; Carini, G.A.; Chen, W.; Elsner, R.F.; Kramer, G.; Keister, J.W.; Li, Z.; Ramsey, B.D.; Rehak, P.; Siddons, D.P.

    2009-09-11

    Over the past three years NASA Marshall Space Flight Center has been collaborating with Brookhaven National Laboratory to develop a modular Silicon Drift Detector (SDD) X-Ray Spectrometer (XRS) intended for fine surface mapping of the light elements of the moon. The value of fluorescence spectrometry for surface element mapping is underlined by the fact that the technique has recently been employed by three lunar orbiter missions; Kaguya, Chandrayaan-1, and Chang'e. The SDD-XRS instrument we have been developing can operate at a low energy threshold (i.e. is capable of detecting Carbon), comparable energy resolution to Kaguya (<150 eV at 5.9 keV) and an order of magnitude lower power requirement, making much higher sensitivities possible. Furthermore, the intrinsic radiation resistance of the SDD makes it useful even in radiation-harsh environments such as that of Jupiter and its surrounding moons.

  7. Silicon on-chip 1D photonic crystal nanobeam bandstop filters for the parallel multiplexing of ultra-compact integrated sensor array.

    Science.gov (United States)

    Yang, Daquan; Wang, Chuan; Ji, Yuefeng

    2016-07-25

    We propose a novel multiplexed ultra-compact high-sensitivity one-dimensional (1D) photonic crystal (PC) nanobeam cavity sensor array on a monolithic silicon chip, referred to as Parallel Integrated 1D PC Nanobeam Cavity Sensor Array (PI-1DPC-NCSA). The performance of the device is investigated numerically with three-dimensional finite-difference time-domain (3D-FDTD) technique. The PI-1DPC-NCSA consists of multiple parallel-connected channels of integrated 1D PC nanobeam cavities/waveguides with gap separations. On each channel, by connecting two additional 1D PC nanobeam bandstop filters (1DPC-NBFs) to a 1D PC nanobeam cavity sensor (1DPC-NCS) in series, a transmission spectrum with a single targeted resonance is achieved for the purpose of multiplexed sensing applications. While the other spurious resonances are filtered out by the stop-band of 1DPC-NBF, multiple 1DPC-NCSs at different resonances can be connected in parallel without spectrum overlap. Furthermore, in order for all 1DPC-NCSs to be integrated into microarrays and to be interrogated simultaneously with a single input/output port, all channels are then connected in parallel by using a 1 × n taper-type equal power splitter and a n × 1 S-type power combiner in the input port and output port, respectively (n is the channel number). The concept model of PI-1DPC-NCSA is displayed with a 3-parallel-channel 1DPC-NCSs array containing series-connected 1DPC-NBFs. The bulk refractive index sensitivities as high as 112.6nm/RIU, 121.7nm/RIU, and 148.5nm/RIU are obtained (RIU = Refractive Index Unit). In particular, the footprint of the 3-parallel-channel PI-1DPC-NCSA is 4.5μm × 50μm (width × length), decreased by more than three orders of magnitude compared to 2D PC integrated sensor arrays. Thus, this is a promising platform for realizing ultra-compact lab-on-a-chip applications with high integration density and high parallel-multiplexing capabilities. PMID:27464080

  8. Direct ultrasensitive electrical detection of prostate cancer biomarkers with CMOS-compatible n- and p-type silicon nanowire sensor arrays

    Science.gov (United States)

    Gao, Anran; Lu, Na; Dai, Pengfei; Fan, Chunhai; Wang, Yuelin; Li, Tie

    2014-10-01

    Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly selective, simultaneous and multiplexed detection of PSA marker at attomolar concentrations, a level useful for clinical diagnosis of prostate cancer, was demonstrated. The detection ability was corroborated to be effective by comparing the detection results at different pH values. Furthermore, the real-time measurement was also carried out in a clinically relevant sample of blood serum, indicating the practicable development of rapid, robust, high-performance, and low-cost diagnostic systems.Sensitive and quantitative analysis of proteins is central to disease diagnosis, drug screening, and proteomic studies. Here, a label-free, real-time, simultaneous and ultrasensitive prostate-specific antigen (PSA) sensor was developed using CMOS-compatible silicon nanowire field effect transistors (SiNW FET). Highly responsive n- and p-type SiNW arrays were fabricated and integrated on a single chip with a complementary metal oxide semiconductor (CMOS) compatible anisotropic self-stop etching technique which eliminated the need for a hybrid method. The incorporated n- and p-type nanowires revealed complementary electrical response upon PSA binding, providing a unique means of internal control for sensing signal verification. The highly

  9. Quantitative analysis of defects in silicon: silicon sheet growth development for the Large Area Silicon Sheet Task of the Low-Cost Solar Array Project. Quarterly progress report No. 5, April 1-June 30, 1979

    Energy Technology Data Exchange (ETDEWEB)

    Natesh, R.; Smith, J.M.; Qidwai, H.A.; Bruce, T.

    1979-07-12

    During this reporting period a computer program was written for the PDP 11/03 computer that controls the Quantimet 720 Image Analyzing System (QTM 720). This program will facilitate the analysis of silicon samples on the upgraded Quantimet 720 System. Also during this period thirty-two (32) Motorola samples were analyzed for twin boundaries, dislocation pits, and grain boundaries. A discussion of the computer program and the data obtained from the thirty-two (32) Motorola samples are given. The use of the Image Editor on the QTM 720 detected image is also described.

  10. Silicon-on ceramic process: silicon sheet growth and device development for the large-area silicon sheet task of the Low-Cost Solar Array Project. Quarterly report NO. 15, April 1, 1980-June 30, 1980

    Energy Technology Data Exchange (ETDEWEB)

    Whitehead, A B; Zook, J D; Grung, B L; McHenry, K; Schuldt, S B; Chapman, P W

    1980-07-31

    The objective of this research is to investigate the technical feasibility of producing solar-cell-quality sheet silicon which could meet the DOE cost goals. The Honeywell approach is to coat one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. Results and accomplishments which occurred during the quarter can be summarized as follows: (1) two major problems associated with SCIM-coating wide (10-cm) substrates were identified and solved; (2) the longitudinal temperature profile in SCIM-II has been improved to prevent substrate warping, buckling, and cracking; (3) the transverse temperature profile in SCIM II has been improved to produce more uniform coatings; (4) a strategy to eliminate effects of thermal stress has been developed; (5) the best SOC cell has a total-area conversion efficiency of 10.5% (AM1, AR), for a cell area of 5 cm/sup 2/; (6) a number of experiments are being investigated for improving cell efficiency; (7) for the slow-cooldown experiment, the average efficiency of 29 AR-coated cells was 9.9%, with a standard deviation of 0.3%; (8) encouraging results were obtained on SOC material that had been treated in a hydrogen plasma at Sandia; and (9) thermal modeling has proven to be beneficial in designing modifications of SCIM II.

  11. Research on precision of monopulse angle measurement based on phased array antenna%基于相控阵天线单脉冲测角算法的测角精度研究

    Institute of Scientific and Technical Information of China (English)

    甘明

    2013-01-01

      测角算法为移动平台间的定向通信提供了保证,因此,重点研究了基于相控阵天线单脉冲测角算法的测角精度,分析了影响测角精度的若干因素,并提出了保障测角精度的措施。最后,仿真分析了测角精度的若干影响因素,仿真结果与分析一致,并验证了保障测角精度措施的有效性。%Angle measurement algorithm guarantees the beam communication among mobile platforms. Therefore,a re⁃search was conducted on the precision of monopulse angle measurement based on phased array antenna. The factors influencing the angle measurement precision were analyzed,and the measures to guarantee the precision were provided. Finally,the simula⁃tion was carried out to analyze the factors affecting the angle measurement precision,which was conform to the theoretic analy⁃sis,and the measures to guarantee the precision were validated to be effective.

  12. Preparation of thin hexagonal highly-ordered anodic aluminum oxide (AAO) template onto silicon substrate and growth ZnO nanorod arrays by electrodeposition

    Science.gov (United States)

    Chahrour, Khaled M.; Ahmed, Naser M.; Hashim, M. R.; Elfadill, Nezar G.; Qaeed, M. A.; Bououdina, M.

    2014-12-01

    In this study, anodic aluminum oxide (AAO) templates of Aluminum thin films onto Ti-coated silicon substrates were prepared for growth of nanostructure materials. Hexagonally highly ordered thin AAO templates were fabricated under controllable conditions by using a two-step anodization. The obtained thin AAO templates were approximately 70 nm in pore diameter and 250 nm in length with 110 nm interpore distances within an area of 3 cm2. The difference between first and second anodization was investigated in details by in situ monitoring of current-time curve. A bottom barrier layer of the AAO templates was removed during dropping the voltage in the last period of the anodization process followed by a wet etching using phosphoric acid (5 wt%) for several minutes at ambient temperature. As an application, Zn nanorod arrays embedded in anodic alumina (AAO) template were fabricated by electrodeposition. Oxygen was used to oxidize the electrodeposited Zn nanorods in the AAO template at 700 °C. The morphology, structure and photoluminescence properties of ZnO/AAO assembly were analyzed using Field-emission scanning electron microscope (FESEM), Energy dispersive X-ray spectroscopy (EDX), Atomic force microscope (AFM), X-ray diffraction (XRD) and photoluminescence (PL).

  13. Influencing Factors of Silicone Rubber Static Contact Angle Measurement%影响硅橡胶静态接触角测量结果的相关因素分析

    Institute of Scientific and Technical Information of China (English)

    徐志钮; 律方成; 张翰韬; 刘云鹏

    2012-01-01

    To improve accuracy of static contact angle measurement of silicone rubber material,the influence of various factors on accuracy of silicone rubber static contact angle measurement should be studied.Basing on a contact angle meter,digital camera and dynamic and static contact angle calculation software DSCA(dynamic static contact angle),we studied the influences of globule volume,delay time,temperature,water conductivity and sample longitudinal inclination on the static contact angle measurement according to sessile drop method.Results indicate that globule volume has little influence on the static contact angle measurement result,while different volume's globule images need different algorithms to calculate the contact angle.Static contact angle decreases with increase in delay time,however,clean,corona,and completely migration-contaminated samples have slow decrease speed,meanwhile,immersed,incompletely migration-contaminated samples have fast decrease speed.Temperature has some influences on the static contact angle measurement,static contact angle becomes small at low temperature.Water conductivity has no obvious effect on the measured static contact angle.If inclination direction is negative,the inclination may cause large error.If inclination direction is positive,in despite of large static contact angle or small static contact angle,the inclination has little influence on the measurement result of static contact angle,however,the inclined globule image will cause difficulty in automatic calculation of static contact angle.So,if a sample is taken out from low temperature condition,it must be placed to room temperature,if the sample is taken out from high temperature condition,it can be measured directly.The globule volume should be selected as 2~4 μL.The globule image should be pictured in 5 s after dripping.Deionized water should be selected,and running water or saline water with certain conductivity can be substituted.Photos should be taken when

  14. Depth-of-interaction measurement in a single-layer crystal array with a single-ended readout using digital silicon photomultiplier.

    Science.gov (United States)

    Lee, Min Sun; Lee, Jae Sung

    2015-08-21

    We present the first experimental evaluation of a depth-of-interaction (DOI) positron emission tomography (PET) detector using a digital silicon photomultiplier (dSiPM). To measure DOI information from a mono-layer array of scintillation crystals with a single-ended readout, our group has previously proposed and developed a new method based on light spread using triangular reflectors. Since this method relies on measurement of the light distribution, dSiPM, which has a fully digital interface, has several merits for our DOI measurement. The DOI PET detector comprised of a dSiPM sensor (DPC-3200-22-44) coupled with a 14   ×   14 array of 2 mm  ×  2 mm  ×  20 mm unpolished LGSO crystals. All crystals were covered with triangular reflectors. To obtain a good performance of the DOI PET detector, several parameters of detector were selected as a preliminary experiment. Detector performance was evaluated with the selected parameters and the optimal experimental setup, and a DOI measurement was conducted by irradiating the crystal block at five DOI positions spaced at intervals of 4 mm. Maximum-likelihood estimation was employed for DOI positioning and the optimal DOI estimation scheme was also investigated in this study. As a result, the DOI PET detector showed clear crystal identification. The energy resolution (full-width at half-maximum (FWHM)) averaged over all depths was 10.21%  ±  0.15% at 511 keV, and time resolution averaged over all depths was 1198.61   ±   39.70 ps FWHM. The average DOI positioning accuracy for all depths was 74.22%  ±  6.77%, which equates to DOI resolution of 4.67 mm. Energy and DOI resolutions were uniform over all crystal positions except for the back parts of the array. Furthermore, additional simulation studies were conducted to verify the results of our DOI measurement method that is combined with dSiPM technology. In conclusion, our continuous DOI PET detector

  15. Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates

    Science.gov (United States)

    Park, J. H.; Pepping, J.; Mukhortova, A.; Ketharanathan, S.; Kodama, R.; Zhao, J.; Hansel, D.; Velicu, S.; Aqariden, F.

    2016-06-01

    We report the development of high-performance and low-cost extended short-wavelength infrared (eSWIR) focal-plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates. High-quality n-type eSWIR HgCdTe (cutoff wavelength ˜2.68 μm at 77 K, electron carrier concentration 5.82 × 1015 cm-3) layers were grown on CdTe/Si substrates by MBE. High degrees of uniformity in composition and thickness were demonstrated over three-inch areas, and low surface defect densities (voids 9.56 × 101 cm-2, micro-defects 1.67 × 103 cm-2) were measured. This material was used to fabricate 320 × 256 format, 30 μm pitch FPAs with a planar device architecture using arsenic implantation to achieve p-type doping. The dark current density of test devices showed good uniformity between 190 K and room temperature, and high-quality eSWIR imaging from hybridized FPAs was obtained with a median dark current density of 2.63 × 10-7 A/cm2 at 193 K with a standard deviation of 1.67 × 10-7 A/cm2.

  16. Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates

    Science.gov (United States)

    Park, J. H.; Pepping, J.; Mukhortova, A.; Ketharanathan, S.; Kodama, R.; Zhao, J.; Hansel, D.; Velicu, S.; Aqariden, F.

    2016-09-01

    We report the development of high-performance and low-cost extended short-wavelength infrared (eSWIR) focal-plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates. High-quality n-type eSWIR HgCdTe (cutoff wavelength ˜2.68 μm at 77 K, electron carrier concentration 5.82 × 1015 cm-3) layers were grown on CdTe/Si substrates by MBE. High degrees of uniformity in composition and thickness were demonstrated over three-inch areas, and low surface defect densities (voids 9.56 × 101 cm-2, micro-defects 1.67 × 103 cm-2) were measured. This material was used to fabricate 320 × 256 format, 30 μm pitch FPAs with a planar device architecture using arsenic implantation to achieve p-type doping. The dark current density of test devices showed good uniformity between 190 K and room temperature, and high-quality eSWIR imaging from hybridized FPAs was obtained with a median dark current density of 2.63 × 10-7 A/cm2 at 193 K with a standard deviation of 1.67 × 10-7 A/cm2.

  17. Photoluminescence of Carbonized Silicon Nanoporous Pillar Array%碳化的硅纳米孔柱阵列的光致发光特性

    Institute of Scientific and Technical Information of China (English)

    胡楚雄; 王小波; 闫玲玲; 蔡晓君; 李新建

    2015-01-01

    采用水热腐蚀法制备了硅纳米孔柱阵列( Si-NPA),并对其进行了不同时间的高温碳化处理。通过对样品光致发光谱进行对比分析,发现Si-NPA经碳化处理后红光发光峰消失,蓝光发射峰强度增强,同时出现一个新的紫外光发光峰。结合对Si-NPA中碳原子存在状态的拉曼分析,蓝光发射峰、紫外光发射峰被分别归因于氧化硅的缺陷发光和碳原子掺杂Si-NPA引起的缺陷发光。上述研究结果为澄清Si-NPA的发光机制以及实现其发光稳定性提供了有益的信息。%The samples of silicon nanoporous pillar array ( Si-NPA ) were prepared by a hydrothermal etching method and were carbonized at high temperature with different times. The photoluminescence ( PL) spectra of carbonized Si-NPA were measured and compared with that of freshly prepared samples. It was found that after carbonization, an ultraviolet PL peak newly appeared and the blue PL was greatly enhanced, accompanied with the disappearance of the red PL peak of Si-NPA. Combined with the Raman analysis on the existing status of carbon atoms in Si-NPA, the blue and the ultraviolet emissions were at-tributed to the PL from the defect states of silicon oxide and doping carbon atoms in Si-NPA, respective-ly. The results might provide some useful information for clarifying the PL mechanism and realizing stable PL of Si-NPA.

  18. A study of the feasibility and performance of an active/passive imager using silicon focal plane arrays and incoherent continuous wave laser diodes

    Science.gov (United States)

    Vollmerhausen, Richard H.

    This dissertation describes an active/passive imager (API) that provides reliable, nighttime, target acquisition in a man-portable package with effective visual range of about 4 kilometers. The reflective imagery is easier to interpret than currently used thermal imagery. Also, in the active mode, the API provides performance equivalent to the big-aperture, thermal systems used on weapons platforms like tanks and attack helicopters. This dissertation describes the research needed to demonstrate both the feasibility and utility of the API. Part of the research describes implementation of a silicon focal plane array (SFPA) capable of both active and passive imaging. The passive imaging mode exceeds the nighttime performance of currently fielded, man-portable sensors. Further, when scene illumination is insufficient for passive imaging, the low dark current of SFPA makes it possible to use continuous wave laser diodes (CWLD) to add an active imaging mode. CWLD have advantages of size, efficiency, and improved eye safety when compared to high peak-power diodes. Because of the improved eye safety, the API provides user-demanded features like video output and extended range gates in the active as well as passive imaging modes. Like any other night vision device, the API depends on natural illumination of the scene for passive operation. Although it has been known for decades that "starlight" illumination is actually from diffuse airglow emissions, the research described in this dissertation provides the first estimates of the global and temporal variation of ground illumination due to airglow. A third related element of the current research establishes the impact of atmospheric aerosols on API performance. We know from day experience that atmospheric scattering of sunlight into the imager line-of-sight can blind the imager and drastically degrade performance. Atmospheric scattering of sunlight is extensively covered in the literature. However, previous literature did not

  19. Fabrication of high density silicon nanodot array based on soft imprinting theory%低压压印制备硅点阵结构的工艺研究

    Institute of Scientific and Technical Information of China (English)

    刘玉东; 陶伟; 王时飞; 李鑫; 王旭迪

    2013-01-01

    高密度、图形规则的硅点阵结构由于其独特的光电性能具有广泛的应用前景.本文介绍了一种以低压压印结合反应离子刻蚀制备硅点阵的方法,即利用PDMS模板通过压印复制获得PMMA掩模结构,用反应离子刻蚀在硅片表面制得高度有序的硅纳米点阵结构.实验和有限元模拟结果表明,低压压印因为毛细作用下光刻胶在模板内的充分填充可以获得良好的图形复制精度和较小的残余胶厚度,因此适于大面积高密度光刻胶结构的均匀复制.%High density and regular silicon nanodot array patterns have been widely researched in many front fields,but the fabrication still remain many problems.In this paper,we present a new method to fabricate silicon nanodot array based on soft imprinting theory.Firstly,according to soft imprinting,we got the PMMA mask by PDMS mould,after that,highly ordered silicon array patterns were obtained combining with reactive ion etching.Experimental and finite element analysis results show that,soft imprinting has a better graphic reproduction accuracy and smaller residual photoresist thickness due to the capillary force,which can lead to better filling of polymer,so it is suitable for large area uniform replication of high density photoresist structure.

  20. 一种宽频宽角圆极化一维相扫天线阵%A broadband wide angle circularly polarized one-dimensional phase scanning antenna array

    Institute of Scientific and Technical Information of China (English)

    陈谦; 李磊; 张小林

    2014-01-01

    基于改进型Vivaldi天线单元,采用4单元十字交叉组合构成圆极化天线,并通过增加耦合金属立柱改善天线轴比,设计了一种超宽频宽角覆盖圆极化直线阵。该天线在1.25-4.1 GHz频段电压驻波比(VSWR)小于2,在1.6-3.6 GHz频段轴比小于3 dB,在垂直扫描方向具备宽角覆盖能力,具备较高的工程应用价值。%Based on improved Vivaldi antenna unit, using four crossed units constitutes a circularly polarized antenna, further improving axial ratio (AR) by adding the coupling metal columns, an ultra-broadband wide-angle circularly polarized linear an-tenna array is designed. The voltage standing wave ratio (VSWR) of the antenna is less than 2 at the frequency range of 1.25 to 4.1 GHz. Meanwhile, the AR is less than 3 dB at the frequency range of 1.6 to 3.6 GHz. This antenna has very wide angle cover-age ability, and has high engineering value.

  1. Submillimeter resolution in one-dimensional position measurements of γ-ray photons by using a CsI(Tl) scintillator coupled to a linear array of silicon drift detectors

    Science.gov (United States)

    Fiorini, C.; Labanti, C.; Perotti, F.

    2000-08-01

    We present the one-dimensional (1D) position and energy resolution results obtained by a γ-ray detector based on a single CsI(Tl) scintillator coupled to a linear array of silicon drift detectors (SDDs). The present prototype has been realized in order to investigate the basic performances of this new architecture in view of the realization of Anger cameras for 2D imaging in nuclear medicine, based on the use of SDDs instead of photomultiplier tubes. The SDD provides a high value of quantum efficiency to the scintillation light, typical of a silicon photodetector, and is moreover characterized by a lower value of electronics noise with respect to conventional silicon photodiodes, thanks to the low value of output capacitance. At 122 keV the present detector shows a position resolution better than 0.5 mm FWHM, and an energy resolution of about 13% FWHM. The experimental setup is described and the most significant experimental results are presented.

  2. Photoemission and photo-field-emission from photocathodes with arrays of silicon tips under continuous and pulsed lasers action; Photoemission et photoemission de champ a partir de photocathodes a reseaux de pointes de silicium sous l`action de lasers continus et pulses

    Energy Technology Data Exchange (ETDEWEB)

    Laguna, M.

    1995-11-01

    The electron machines`s development and improvement go through the discovery of new electron sources of high brightness. After reminding the interests in studying silicon cathodes with array of tips as electron sources, I describe, in the three steps model, the main phenomenological features related to photoemission and photoemission and photo-field-emission from a semi-conductor. the experimental set-ups used for the measurements reported in chapter four, five and six are described in chapter three. In chapter three. In chapter four several aspects of photo-field-emission in continuous and nanosecond regimes, studied on the Clermont-Ferrand`s test bench are tackled. We have measured quantum efficacies of 0.4 percent in the red (1.96 eV). Temporal responses in the nanoseconds range (10 ns) were observed with the Nd: YLF laser. With the laser impinging at an oblique angle we obtained ratios of photocurrent to dark current of the order of twenty. The issue of the high energy extracted photocurrent saturation is addressed and I give a preliminary explanation. In collaboration with the L.A.L. (Laboratoire de l`Accelerateur Lineaire) some tests with shortened pulsed laser beam (Nd: YAG laser 35 ps) were performed. Satisfactory response times have been obtained within the limitation of the scope (400 ps). (authors). 101 refs. 93 figs., 27 tabs., 3 photos., 1 append.

  3. Silicon Materials Task of the Low Cost Solar Array Project (Phase II). Eighth quarterly report, July 1, 1977--September 30, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Hopkins, R.H.; Blais, P.D.; Davis, J.R.; Hanes, M.H.; Rai-Choudhury, P.; Rohatgi, A.; McCormick, J.R.

    1977-12-01

    The objective of Phase II of this program is to investigate the effects of various processes, metal contaminants, and contaminant-process interactions on the performance of terrestrial silicon solar cells so that purity requirements for a solar grade silicon can be delineated. The program approach consists in (1) the growth of doubly and multiply-doped silicon single crystals containing a baseline boron or phosphorus dopant and specific impurities which produce deep levels in the forbidden band gap, (2) assessment of these crystals by a battery of chemical, microstructural, electrical and solar cell tests, (3) correlation of the impurity kind and level with crystal quality and device performance, (4) delineation of the role of impurities and processing on subsequent silicon solar cell performance, and (5) determination of the combined effects of impurities and growth rate on the crystal quality and cell performance of silicon produced by both the dendritic web and Czochralski methods. The central thrust of activities this quarter was in three areas: the crystal growth of impurity-bearing ingots with different base doping types and concentrations; evaluation of the solar cell performance of n-base and p-base devices; and refinement of techniques for the analysis of solar cells subjected to various contaminants and process variations.

  4. Use of hydroxypropylmethylcellulose 2% for removing adherent silicone oil from silicone intraocular lenses

    OpenAIRE

    Wong, S Chien; Ramkissoon, Yashin D; Lopez, Mauricio; Page, Kristopher; Ivan P. Parkin; Sullivan, Paul M

    2009-01-01

    Abstract Background / aims: To investigate the effect of hydroxypropylmethylcellulose (HPMC) on the physical interaction (contact angle) between silicone oil and a silicone intraocular lens (IOL). Methods: In vitro experiments were performed, to determine the effect of HPMC (0.5%, 1% or 2%), with or without an additional simple mechanical manoeuvre, on the contact angle of silicone oil at the surface of both silicone and acrylic (control) IOLs. A balanced salt solu...

  5. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  6. Micro-Ball Lens Array Fabrication in Photoresist Using Ptfe Hydrophobic Effect

    CERN Document Server

    Shyu Ruey Fang; Tsai Wen Ren; Tsai Jhy Cherng

    2007-01-01

    This paper presents a simple method to fabricate micro-ball lens and its array. The key technology is to use the hydrophobic characteristics of polyterafluoroethylene (PTFE) substrate. High contact angle between melted photoresist pattern and PTFE can generate micro-ball lens and its array. PTFE thin film was spun onto a silicon wafer and dried in oven. Photoresist AZ4620 was used to pattern micro-columns with different diameters 60, 70 and 80 $\\mu$m. A thermal reflow process then was applied to melt these micro-column patterns resulted in micro-ball lens array. The achieved micro-ball lens array with diameter 98 $\\mu$m was fabricated using 80 $\\mu$m in diameter patterns. This method provides a simple fabrication process and low material cost.

  7. Photovoltaic module and array performance characterization methods for all system operating conditions

    Energy Technology Data Exchange (ETDEWEB)

    King, D.L.

    1996-12-31

    This paper provides new test methods and analytical procedures for characterizing the electrical performance of photovoltaic modules and arrays. The methods use outdoor measurements to provide performance parameters both at standard reporting conditions and for all operating conditions encountered by typical photovoltaic systems. Improvements over previously used test methods are identified, and examples of the successful application of the methodology are provided for crystalline- and amorphous-silicon modules and arrays. This work provides an improved understanding of module and array performance characteristics, and perhaps most importantly, a straight- forward yet rigorous model for predicting array performance at all operating conditions. For the first time, the influences of solar irradiance, operating temperature, solar spectrum, solar angle-of- incidence, and temperature coefficients are all addressed in a practical way that will benefit both designers and users of photovoltaics.

  8. Ultra-thin g-C{sub 3}N{sub 4} nanosheets wrapped silicon nanowire array for improved chemical stability and enhanced photoresponse

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Beibei; Yu, Hongtao; Quan, Xie, E-mail: quanxie@dlut.edu.cn; Chen, Shuo

    2014-11-15

    Highlights: • g-C{sub 3}N{sub 4}, as an oxygen free and metal free protective material for Si, was proposed. • g-C{sub 3}N{sub 4} nanosheets wrapped Si nanowire array was synthesized. • SiNW/g-C{sub 3}N{sub 4} exhibited enhancement of photoelectrochemical stability and photocurrent. - Abstract: In order to inhibit the oxidation of Si materials in aqueous solution, Si nanowire array was wrapped by ultra-thin g-C{sub 3}N{sub 4} nanosheets via an electrophoresis process. Scanning electron microscopy and transmission electron microscopy images showed that g-C{sub 3}N{sub 4} nanosheets were evenly distributed on the surface of Si nanowire array. X-ray diffraction patterns indicated that Si nanowire array/g-C{sub 3}N{sub 4} nanosheets were composed of Si (4 0 0 crystal plane) and g-C{sub 3}N{sub 4} (0 0 2 and 1 0 0 crystal planes). The cyclic voltammetry curves revealed that the corrosion of Si nanowire array was restrained under the protection of g-C{sub 3}N{sub 4} nanosheets. Furthermore, the photocurrent density of Si nanowire array/g-C{sub 3}N{sub 4} nanosheets increased by nearly 3 times compared to that of bare Si nanowire array due to the effective charge separation caused by the built-in electric field at the interface. This work will facilitate the applications of Si materials in aqueous solution, such as solar energy harvest and photocatalytic pollution control.

  9. Silicon Ingot Casting - Heat Exchanger Method (HEM). Multi-Wire Slicing - Fixed Abrasive Slicing Technique (Fast). Phase 4 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-Cost Solar Array Project

    Science.gov (United States)

    Schmid, F.

    1981-01-01

    The crystallinity of large HEM silicon ingots as a function of heat flow conditions is investigated. A balanced heat flow at the bottom of the ingot restricts spurious nucleation to the edge of the melted-back seed in contact with the crucible. Homogeneous resistivity distribution over all the ingot has been achieved. The positioning of diamonds electroplated on wirepacks used to slice silicon crystals is considered. The electroplating of diamonds on only the cutting edge is described and the improved slicing performance of these wires evaluated. An economic analysis of value added costs of HEM ingot casting and band saw sectioning indicates the projected add on cost of HEM is well below the 1986 allocation.

  10. Strange and multi-strange baryon measurement in Au + Au collisions at 11.6A(GeV/c) with the silicon drift detector array from the AGS experiment E896

    CERN Document Server

    Lo Curto, G; Bellwied, R; Bennett, M; Boemi, D; Bonner, B; Caccia, Z; Caines, H; Christie, W; Cina, G; Costa, S; Crawford, H; Cronqvist, M; Debbe, R; Engelage, J; Flores, I; Greiner, L; Hallman, T; Hoffman, G; Huang, H; Humanic, T J; Igo, G; Insolia, A; Jensen, P; Judd, E; Kainz, K; Kaplan, M; Kelly, S; Kotov, I; Kunde, G; Lindstrom, P; Ljubicic, T; Llope, W J; Longacre, R; Lynn, D; Madansky, L; Mahzeh, N; Milosevich, Z; Mitchell, J T; Mitchell, J; Nehmeh, S; Nociforo, C; Paganis, S; Pandey, S U; Potenza, R; Platner, E; Riley, P; Russ, D; Saulys, A; Schambach, J; Sheen, J; Stokley, C; Sugarbaker, E R; Takahashi, J; Tang, J; Trentalange, S; Tricomi, A; Tull, C; Tuve', C; Whitfield, J; Wilson, K

    1999-01-01

    The main purpose of experiment E896 is to study the production of strange hadrons, in particular the predicted six-quark di-baryon, the H sub 0. The placement of the silicon drift detector array (SDDA) close to the target in a 6.2T magnetic field is optimized for the reconstruction of a short lived H sub 0 as well as of strange baryons (LAMBDA, LAMBDA-bar, XI sup -). Simulations show that with the present data sample a detailed study of the LAMBDA and XI sup - yields and distributions may be performed and a clear LAMBDA-bar signal might be detected. Simulations as well as a preliminary analysis of the SDDA data will be presented.

  11. S频段大扫描角圆极化相控阵天线研制%Development of S band circularly polarized phased-array antenna with large scanning angle

    Institute of Scientific and Technical Information of China (English)

    尹经禅

    2014-01-01

    设计了一套S频段圆极化相控阵天线,该相控阵天线采用9个微带贴片天线单元进行优化排列与旋转组阵实现。通过HFSS软件仿真,在辐射功率10 dBW的情况下,该相控阵天线在方位360o俯仰±80o的大扫描角范围内,具有大于15 dBW的等效全向辐射功率(EIRP),法向轴比在整个频带内平坦且小于0.5 dB。设计并装配好该相控阵天线后进行测试,得到扫描范围内大于15 dBW的EIRP值,同时测得法向轴比在整个频带内平坦且小于1 dB,测试值与仿真设计值吻合很好。%An S band circularly polarized phased-array antenna was designed, which was realized by arranging and properly rotating 9 microstrip-patch antenna units. Through simulation by HFSS software, in case of 10 dBW radiation power, the phased-array antenna’s EIRP can be larger than 15 dBW in any azimuth of 360o with the large scanning angle of ±80o. Meanwhile, the simulated axial ratio of normal direction is flat in the working band and lower than 0.5 dB. The antenna was assembled and measured. Results show that EIRP is larger than 15 dBW in all the scanning range. Meanwhile, the measured axial ratio of normal direction is flat and lower than 1 dB in the working band. All the measured data matches well with the simulation.

  12. Novel joint angle and frequency estimation algorithm based on arbitrary acoustic vector array%基于任意声矢量传感器阵列的角度和频率估计算法

    Institute of Scientific and Technical Information of China (English)

    许凌云; 张小飞; 许宗泽; 于淼

    2012-01-01

    A novel joint angle and frequency estimation algorithm 'for acoustic vector sensor array is presented in this paper. The output signal of the acoustic vector array is analyzed and the result shows that it has parallel factor quadrilinear model characteristics. The source parameters can be estimated from the resultant matrices via low-rank decomposition that utilizes the uniqueness of PARAFAC decomposition. The algorithm firstly uses parallel factor quadrilinear decomposition algorithm to estimate the direction and frequency matrices; secondly the frequencies and direction of arrivals ( DOAs) , are estimated according to the structural characteristics of the matrices and least square principle. Compared with traditional algorithm, the method which doesn't require multidimensional searching spectral peak or parameter pairing, has higher estimation precision of the parameters, and has certain application value in engineering. Simulation and experiment results verify the effectiveness of the proposed algorithm.%提出了一种基于任意声矢量传感器阵列下联合角度和频率估计新方法.将矢量传感器阵输出的信号进行建模分析表明此信号具有平行因子四线性模型特征.利用四线性分解的唯一性条件,从分解得到的矩阵中联合估计出声源的参数.该算法首先应用平行因子四线性分解算法估计出频率矩阵和方位矩阵,然后根据频率矩阵和方位矩阵的结构特点及最小二乘方法进行声源参数的计算.该方法与传统算法相比,无需多维谱峰搜索及参数配对,并具有更高的估计精度,在工程上有一定的应用价值.计算机仿真和实验结果验证了该方法的有效性.

  13. Photoelectrochemistry of Semiconductor Nanowire Arrays

    Energy Technology Data Exchange (ETDEWEB)

    Mallouk, Thomas E; Redwing, Joan M

    2009-11-10

    This project supported research on the growth and photoelectrochemical characterization of semiconductor nanowire arrays, and on the development of catalytic materials for visible light water splitting to produce hydrogen and oxygen. Silicon nanowires were grown in the pores of anodic aluminum oxide films by the vapor-liquid-solid technique and were characterized electrochemically. Because adventitious doping from the membrane led to high dark currents, silicon nanowire arrays were then grown on silicon substrates. The dependence of the dark current and photovoltage on preparation techniques, wire diameter, and defect density was studied for both p-silicon and p-indium phosphide nanowire arrays. The open circuit photovoltage of liquid junction cells increased with increasing wire diameter, reaching 350 mV for micron-diameter silicon wires. Liquid junction and radial p-n junction solar cells were fabricated from silicon nano- and microwire arrays and tested. Iridium oxide cluster catalysts stabilized by bidentate malonate and succinate ligands were also made and studied for the water oxidation reaction. Highlights of this project included the first papers on silicon and indium phosphide nanowire solar cells, and a new procedure for making ligand-stabilized water oxidation catalysts that can be covalently linked to molecular photosensitizers or electrode surfaces.

  14. Silicone metalization

    Science.gov (United States)

    Maghribi, Mariam N.; Krulevitch, Peter; Hamilton, Julie

    2006-12-05

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  15. Silicon nanodisk array with a fin field-effect transistor for time-domain weighted sum calculation toward massively parallel spiking neural networks

    Science.gov (United States)

    Tohara, Takashi; Liang, Haichao; Tanaka, Hirofumi; Igarashi, Makoto; Samukawa, Seiji; Endo, Kazuhiko; Takahashi, Yasuo; Morie, Takashi

    2016-03-01

    A nanodisk array connected with a fin field-effect transistor is fabricated and analyzed for spiking neural network applications. This nanodevice performs weighted sums in the time domain using rising slopes of responses triggered by input spike pulses. The nanodisk arrays, which act as a resistance of several giga-ohms, are fabricated using a self-assembly bio-nano-template technique. Weighted sums are achieved with an energy dissipation on the order of 1 fJ, where the number of inputs can be more than one hundred. This amount of energy is several orders of magnitude lower than that of conventional digital processors.

  16. Nano-Mole Scale Side-Chain Signal Assignment by 1H-Detected Protein Solid-State NMR by Ultra-Fast Magic-Angle Spinning and Stereo-Array Isotope Labeling

    KAUST Repository

    Wang, Songlin

    2015-04-09

    We present a general approach in 1H-detected 13C solid-state NMR (SSNMR) for side-chain signal assignments of 10-50 nmol quantities of proteins using a combination of a high magnetic field, ultra-fast magic-angle spinning (MAS) at ~80 kHz, and stereo-array-isotope-labeled (SAIL) proteins [Kainosho M. et al., Nature 440, 52–57, 2006]. First, we demonstrate that 1H indirect detection improves the sensitivity and resolution of 13C SSNMR of SAIL proteins for side-chain assignments in the ultra-fast MAS condition. 1H-detected SSNMR was performed for micro-crystalline ubiquitin (~55 nmol or ~0.5mg) that was SAIL-labeled at seven isoleucine (Ile) residues. Sensitivity was dramatically improved by 1H-detected 2D 1H/13C SSNMR by factors of 5.4-9.7 and 2.1-5.0, respectively, over 13C-detected 2D 1H/13C SSNMR and 1D 13C CPMAS, demonstrating that 2D 1H-detected SSNMR offers not only additional resolution but also sensitivity advantage over 1D 13C detection for the first time. High 1H resolution for the SAIL-labeled side-chain residues offered reasonable resolution even in the 2D data. A 1H-detected 3D 13C/13C/1H experiment on SAIL-ubiquitin provided nearly complete 1H and 13C assignments for seven Ile residues only within ~2.5 h. The results demonstrate the feasibility of side-chain signal assignment in this approach for as little as 10 nmol of a protein sample within ~3 days. The approach is likely applicable to a variety of proteins of biological interest without any requirements of highly efficient protein expression systems.

  17. Studies of an array of PbF2 Cherenkov crystals with large-area SiPM readout

    OpenAIRE

    Fienberg, A. T.; Alonzi, L. P.; Anastasi, A.; Bjorkquist, R.; Cauz, D.; Fatemi, R.; Ferrari, C.; Fioretti, A.; Frankenthal, A.; Gabbanini, C.; Gibbons, L. K.; Giovanetti, K.; Goadhouse, S. D.; Gohn, W. P.; Gorringe, T. P.

    2014-01-01

    The electromagnetic calorimeter for the new muon (g-2) experiment at Fermilab will consist of arrays of PbF2 Cherenkov crystals read out by large-area silicon photo-multiplier (SiPM) sensors. We report here on measurements and simulations using 2.0 -- 4.5 GeV electrons with a 28-element prototype array. All data were obtained using fast waveform digitizers to accurately capture signal pulse shapes versus energy, impact position, angle, and crystal wrapping. The SiPMs were gain matched using a...

  18. Gaia basic angle monitoring system

    Science.gov (United States)

    Gielesen, W.; de Bruijn, D.; van den Dool, T.; Kamphues, F.; Mekking, J.; Calvel, B.; Laborie, A.; Coatantiec, C.; Touzeau, S.; Erdmann, M.; Gare, P.; Monteiro, D.

    2013-09-01

    The Gaia mission1 will create an extraordinarily precise three-dimensional map of more than one billion stars in our Galaxy. The Gaia spacecraft2, built by EADS Astrium, is part of ESA's Cosmic Vision programme and scheduled for launch in 2013. Gaia measures the position, distance and motion of stars with an accuracy of 24 micro-arcsec using two telescopes at a fixed mutual angle of 106.5°, named the `Basic Angle', at an operational temperature of 100 K. This accuracy requires ultra-high stability at cryogenic conditions, which can only be achieved by using Silicon Carbide for both the optical bench and the telescopes. TNO has developed, built and space qualified the Silicon carbide Basic Angle Monitoring (BAM) on-board metrology system3 for this mission, measuring the relative motion of Gaia's telescopes with accuracies in the range of 0.5 micro-arcsec. This is achieved by a system of two laser interferometers able to detect Optical Path Differences (OPD) as small as 1.5 picometer rms. Following a general introduction on Gaia and the use of Silicon Carbide as base material this paper addresses the specific challenges towards the cryogenic application of the Gaia BAM including design, integration and verification/qualification by testing.

  19. Silicon Ingot Casting - Heat Exchanger Method Multi-wire Slicing - Fixed Abrasive Slicing Technique. Phase 3 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-cost Solar Array Project

    Science.gov (United States)

    Schmid, F.; Khattak, C. P.

    1979-01-01

    Several 20 cm diameter silicon ingots, up to 6.3 kg. were cast with good crystallinity. The graphite heat zone can be purified by heating it to high temperatures in vacuum. This is important in reducing costs and purification of large parts. Electroplated wires with 45 um synthetic diamonds and 30 um natural diamonds showed good cutting efficiency and lifetime. During slicing of a 10 cm x 10 cm workpiece, jerky motion occurred in the feed and rocking mechanisms. This problem is corrected and modifications were made to reduce the weight of the bladeheat by 50%.

  20. 槽式聚光系统聚光硅电池阵列特性实验研究%Characteristic Investigation of Concentration Silicon Solar Cell Arrays Based on the Trough Concentrating System

    Institute of Scientific and Technical Information of China (English)

    许玲; 李明; 李国良; 黄波; 魏生贤

    2011-01-01

    The performance tests of two types of domestic concentration silicon cell arrays with parallel and inverted square grid-line distribution based on the trough concentrating photovoltaic/thermal system have been carried out.Experimental results indicate that photoelectric efficiencies of the two selected concentration silicon solar cell arrays reach 11.42% and 13.89%.The maximum output power amplifies 16.06 times and 19.33 times respectively with energy flux concentration ratio 20 times.The temperature coefficients of Pm, FF and 77 of the two cell arrays are -0.047 W/K、 -0.45%/K、 -0.035%/K and -0.029 W/K、 -0.176%/K、 -0.105%/K respectively.All those works provide reference for choosing concentrating solar cells and optimizing performance of trough concentrating photovoltaic/ thermal system.%利用所设计的槽式聚光热电联供系统,对栅线平行分布和反方形分布的两种聚光硅太阳电池阵列进行了性能测试研究.结果表明,在能流聚光比为20倍的槽式聚光器下,两种电池阵列的光电效率分别为11.42%和13.89%,最大输出功率分别比聚光前放大16.06倍和19.33倍.两种电池阵列Pm、FF和η的温度系数分别为:-0.047 W/K、-0.45%/K、-0.035%/K;-0.029 W/K、-0.176%/K、-0.105%/K.研究结果为中低倍聚光系统聚光电池的选择和槽式聚光热电联供系统性能的优化提供参考.

  1. 基于二氧化硅球腔微电极阵列的过氧化氢生物传感器制备%Fabrication of Hydrogen Peroxide Biosensors Based on Microelectrode Array of Silicon Dioxide Cavities

    Institute of Scientific and Technical Information of China (English)

    周丽娟; 尹凡; 周宇

    2011-01-01

    A silicon dioxide (SiO2) cavities array was fabricated on indium-tin oxide (ITO) electrode surface with the template of the polystyrene (PS) particles array by using sol-gel technique. The morphology of SiO2 cavities array was highly ordered which was obtained by scanning electrode microscope. The results of electrochemistrical study showed that the cyclic voltammetric (CV) curve of SiO2 cavities array was in accordance with that of microelectrodes array. Using hemoglobin (Hb) as model protein, an amperometric biosensor for detection of H2O2 was prepared by adsorbing Hb in SiO2 cavities directly. The properties of direct electrochemistry and electrocatalysis of Hb were studied by CV method. The response of the biosensor for H2O2 was fast. A linear relationship between current response and the concentration of H2O2 ranging from 2. 03 × 10~6 to 1. 21 × 10-2 mol/L was obtained with a detection limit of 5. 73×10-7mol/L. And the apparent Michaelis-Menten constant was 0. 266 mmol/L.%以聚苯乙烯(PS)微球阵列为模板,采用溶胶-凝胶法在氧化铟锡( ITO)电极上制备了二氧化硅(SiO2)球腔阵列,扫描电镜显示此方法制备的SiO2球腔阵列高度有序.电化学研究结果表明,该球腔阵列的循环伏安曲线符合微电极阵列的电化学特点.将血红蛋白(Hb)作为氧化还原模型蛋白直接吸附于球腔内,制得电流型过氧化氢(H2O2)生物传感器,研究了Hb在该微电极阵列上的直接电化学和电催化性质.所构建的传感器对H2 O2的响应快速灵敏,其线性范围为2.03×10-6~1.21×10-5mol/L和2.03×10-5~1.21×10-2mol/L;检出限为5.73× 10-7mol/L,米氏常数为0.266 mmol/L.

  2. Ordered arrays of lead zirconium titanate nanorings

    International Nuclear Information System (INIS)

    Periodic arrays of nanorings of morphotropic phase boundary lead zirconium titanate (PZT) have been successfully fabricated using a novel self-assembly technique: close-packed monolayers of latex nanospheres were deposited onto Pt-coated silicon substrates, and then plasma cleaned to form ordered arrays of isolated nanospheres, not in contact with each other. Subsequent pulsed laser deposition of PZT, high angle argon ion etching and thermal annealing created the arrays of isolated nanorings, with diameters of ∼100 nm and wall thicknesses of ∼10 nm. Energy dispersive x-ray analysis confirms that the rings are compositionally morphotropic phase boundary PZT, and high resolution transmission electron microscopy imaging of lattice fringes demonstrates some periodicities consistent with perovskite rather than pyrochlore material. The dimensions of these nanorings, and the expected 'soft' behaviour of the ferroelectric material from which they are made, means that they offer the most likely opportunity to date for observing whether or not vortex arrangements of electrical dipoles, analogous to those seen in ferromagnetic nanostructures, actually exist

  3. Ion-transfer voltammetric determination of the beta-blocker propranolol in a physiological matrix at silicon membrane-based liquid|liquid microinterface arrays.

    Science.gov (United States)

    Collins, Courtney J; Arrigan, Damien W M

    2009-03-15

    In this work, the ion-transfer voltammetric detection of the protonated beta-blocker propranolol in artificial saliva is presented. Cyclic voltammetry, differential pulse voltammetry, and differential pulse stripping voltammetry (DPSV) were employed in the detection of the cationic drug based on ion-transfer voltammetry across arrays of microinterfaces between artificial saliva and an organogel phase. It was found that the artificial saliva matrix decreased the available potential window for ion-transfer voltammetry at this liquid|liquid interface but transfer of protonated propranolol was still achieved. The DPSV method employed a preconditioning step as well as a preconcentration step followed by analytical signal generation based on the back-transfer of the drug across the array of microinterfaces. The DPSV peak current response was linear with drug concentration in the artificial saliva matrix over the concentration range of 0.05-1 microM (i(p) = -8.13 (nA microM(-1))(concentration) + 0.07 (nA), R = 0.9929, n = 7), and the calculated detection limit (3s(b)) was 0.02 microM. These results demonstrate that DPSV at arrays of liquid|liquid microinterfaces is a viable analytical approach for pharmaceutical determinations in biomimetic matrixes.

  4. Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base

    Energy Technology Data Exchange (ETDEWEB)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-01

    The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

  5. Angle independent velocity spectrum determination

    DEFF Research Database (Denmark)

    2014-01-01

    An ultrasound imaging system (100) includes a transducer array (102) that emits an ultrasound beam and produces at least one transverse pulse-echo field that oscillates in a direction transverse to the emitted ultrasound beam and that receive echoes produced in response thereto and a spectral vel...... velocity estimator (110) that determines a velocity spectrum for flowing structure, which flows at an angle of 90 degrees and flows at angles less than 90 degrees with respect to the emitted ultrasound beam, based on the received echoes....

  6. Protein Functionalized Nanodiamond Arrays

    Directory of Open Access Journals (Sweden)

    Liu YL

    2010-01-01

    Full Text Available Abstract Various nanoscale elements are currently being explored for bio-applications, such as in bio-images, bio-detection, and bio-sensors. Among them, nanodiamonds possess remarkable features such as low bio-cytotoxicity, good optical property in fluorescent and Raman spectra, and good photostability for bio-applications. In this work, we devise techniques to position functionalized nanodiamonds on self-assembled monolayer (SAMs arrays adsorbed on silicon and ITO substrates surface using electron beam lithography techniques. The nanodiamond arrays were functionalized with lysozyme to target a certain biomolecule or protein specifically. The optical properties of the nanodiamond-protein complex arrays were characterized by a high throughput confocal microscope. The synthesized nanodiamond-lysozyme complex arrays were found to still retain their functionality in interacting with E. coli.

  7. Simple Approach to Superamphiphobic Overhanging Silicon Nanostructures

    DEFF Research Database (Denmark)

    Kumar, Rajendra; Mogensen, Klaus Bo; Bøggild, Peter

    2010-01-01

    Superhydrophobic silicon nanostructures were fabricated by anisotropic etching of silicon coated with a thin hydrophobic layer. At certain etch parameters, overhanging nanostructures form at the apexes of the rod-shaped tips, This leads to superoleophobic behavior for several oily liquids...... with contact angles up to 152 degrees and roll-off angle down to 8 degrees. Such nonlithographic nanoscale overhanging Structures can also be added to silicon nanograss by deposition of a thin SiO2 layer, which equips the silicon rods with 100-300 nm sized overhanging Structures. This is a simple, fast...

  8. Small SRS photon field profile dosimetry performed using a PinPoint air ion chamber, a diamond detector, a novel silicon-diode array (DOSI), and polymer gel dosimetry. Analysis and intercomparison.

    Science.gov (United States)

    Pappas, E; Maris, T G; Zacharopoulou, F; Papadakis, A; Manolopoulos, S; Green, S; Wojnecki, C

    2008-10-01

    Small photon fields are increasingly used in modern radiotherapy and especially in IMRT and SRS/SRT treatments. The uncertainties related to small field profile measurements can introduce significant systematic errors to the overall treatment process. These measurements are challenging mainly due to the absence of charged particle equilibrium conditions, detector size and composition effects, and positioning problems. In this work four different dosimetric methods have been used to measure the profiles of three small 6 MV circular fields having diameters of 7.5, 15.0, and 30.0 mm: a small sensitive volume air ion chamber, a diamond detector, a novel silicon-diode array (DOSI), and vinyl-pyrrolidone based polymer gel dosimeter. The results of this work support the validity of previous findings, suggesting that (a) air ion chambers are not suitable for small field dosimetry since they result in penumbra broadening and require significant corrections due to severe charged particle transport alterations; (b) diamond detectors provide high resolution and rather accurate small field profile measurements, as long as positioning problems can be addressed and the necessary dose rate corrections are correctly applied; and (c) the novel silicon-diode array (DOSI) used in this study seems to be adequate for small field profile measurements overcoming positioning problems. Polymer gel data were assumed as reference data to which the other measurement data were compared both qualitatively and quantitatively using the gamma-index concept. Polymer gels are both phantom and dosimeter, hence there are no beam perturbation effects. In addition, polymer gels are tissue equivalent and can provide high-spatial density and high-spatial resolution measurements without positioning problems, which makes them useful for small field dosimetry measurements. This work emphasizes the need to perform beam profile measurements of small fields (for acceptance, commissioning, treatment planning

  9. The effect of copper coating on nanocolumnar silicon anodes for lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Polat, B.D., E-mail: bpolat@itu.edu.tr; Keles, O., E-mail: ozgulkeles@itu.edu.tr

    2015-08-31

    In this work, a very thin (20 nm) copper (Cu) coated silicon (Si) nanocolums are produced by an oblique angle deposition method. Galvanostatic half-cell measurements show that, the Cu coated Si nanocolumn arrays perform 1700 mAh g{sup −1} in the first cycle, then after 10 cycles its performance is stabilized to 500 mAh g{sup −1} with 99% coulombic efficiency for 90 cycles. This high performance is related to its particular morphology and physical properties: having homogenously distributed nano-sized porosities in the Cu coated film increase the mechanical tolerance of the electrode against the volumetric changes occurred during galvanostatic test, plus the ductile behavior of the Cu film holds the electrode together to prevent the electronic isolation, pulverization or delamination of the coating, moreover the formation of Cu{sub 15}Si{sub 4} intermetallic increases the mechanical resistances of the coating against the stress generated in the electrode, and the existence of the Cu top coat between the Si nanocolumns and the electrolyte changes the surface reactivity of the electrode, hence its interaction with the electrolyte leading to higher coulombic efficiency once a stable passive forms on the anode. - Highlights: • Silicon nanocolumn arrays are produced via oblique angle deposition method. • Copper layer is deposited on silicon nanocolumns to improve the anode performance. • Copper layer acts as a glue to improve the physical and the mechanical properties. • Intermetallic formation enhances cycleability of the electrode.

  10. A self-heated silicon nanowire array: selective surface modification with catalytic nanoparticles by nanoscale Joule heating and its gas sensing applications.

    Science.gov (United States)

    Yun, Jeonghoon; Jin, Chun Yan; Ahn, Jae-Hyuk; Jeon, Seokwoo; Park, Inkyu

    2013-08-01

    We demonstrated novel methods for selective surface modification of silicon nanowire (SiNW) devices with catalytic metal nanoparticles by nanoscale Joule heating and local chemical reaction. The Joule heating of a SiNW generated a localized heat along the SiNW and produced endothermic reactions such as hydrothermal synthesis of nanoparticles or thermal decomposition of polymer thin films. In the first method, palladium (Pd) nanoparticles could be selectively synthesized and directly coated on a SiNW by the reduction of the Pd precursor via Joule heating of the SiNW. In the second method, a sequential process composed of thermal decomposition of a polymer, evaporation of a Pd thin film, and a lift-off process was utilized. The selective decoration of Pd nanoparticles on SiNW was successfully accomplished by using both methods. Finally, we demonstrated the applications of SiNWs decorated with Pd nanoparticles as hydrogen detectors. We also investigated the effect of self-heating of the SiNW sensor on its sensing performance. PMID:23770994

  11. Silicon Materials Task of the Low Cost Solar Array Project (Phase II). Sixth quarterly report, 1 January 1977--March 31, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Hopkins, R.H.; Davis, J.R.; Rai-Choudhury, P.; Blais, P.D.; McCormick, J.R.

    1977-01-01

    Preliminary studies have been conducted to develop a foundation for the work to be carried out in Phase II of the program, which is designed to investigate the effects of processes and impurities on terrestrial silicon solar cells. Solar cells nearly 10% efficient (without AR coatings) can be made on p-type material with resistivities down to about 0.2 ..cap omega..-cm using a process similar to that employed during Phase I of the program. As resistivity falls below about 0.1 ..cap omega..-cm cell efficiency also falls and process instabilities become more prevalent. For this reason the resistivity of the baseline material chosen to study the combined effects of boron and metal doping will probably be in the 0.1 to 0.3 ..cap omega..-cm range. Initial studies on n-base material indicate that 0.2 ..mu..m deep junctions with adequate sheet resistivities can be obtained by boron diffusion from BBr/sub 3/ at 875/sup 0/C. Slow cooling from the diffusion temperature appears necessary to maintain good lifetime and I/sub sc/ values. p/sup +//n/n/sup +/ cells fabricated on a Westinghouse internal program using this type of processing produce coated cells with 16% efficiencies. Future studies will focus on metal impurity doping of low resistivity p-type and n-type substrates and on gettering and heat treatment effects in standard 4 ..cap omega..-cm p-type material.

  12. Imaging antenna array at 119 µm

    OpenAIRE

    Neikirk, Dean P.; Tong, Peter P.; Rutledge, David B.; Park, Hyeon; Young, Peter E.

    1982-01-01

    A focal-plane imaging antenna array has been demonstrated at 119 µm. The array is a line of evaporated silver bow-tie antennas with bismuth microbolometer detectors on a silicon substrate. Radiation is coupled into the array by a lens placed on the back of the substrate. The bolometers are thermally isolated from the silicon substrate with a half-micron layer of polyimide. The array performance is demonstrated by coherent imaging of a series of holes at half the diffraction-limited cut-off fr...

  13. Evaluation of selected chemical processes for production of low-cost silicon (Phase II). Silicon Material Task, Low-Cost Silicon Solar Array Project. Fifth--sixth quarterly progress report, October 1, 1976--March 31, 1977. [Zinc reduction of silicon tetrachloride in fluidized bed

    Energy Technology Data Exchange (ETDEWEB)

    Blocher, J.M. Jr.; Browning, M.F.; Wilson, W.J.; Carmichael, D.C.

    1977-04-29

    The results of experimental work and economic analyses carried out during the first 12 months of this contract (Phase I) have led to Battelle's concentration on development of the zinc reduction of silicon tetrachloride on seed particles in a fluidized bed. A second year program (Phase II) has been initiated which consists of the design of a 25 MT/year experimental facility and supporting experiment effort. During this quarter, the effort in the plant design portion of the program has been devoted to the (1) preparation of a detailed process schematic diagram; (2) determination of material flow and energy requirements; (3) conceptual design of major equipment items, including those unique to the facility; (4) contacts with industrial companies on equipment and processes for which experience is available; and (5) initiation of contacts with Battelle pilot plant design specialists, a distillation consultant, and engineering firms. The effort in the experimental support portion of the program has included a continuation of the following studies: (1) operating parameter optimization in the miniplant, (2) reactor design, and (3) condenser system design, including supplemental condensation experiments. In addition, a new zinc feed system has been devised and evaluated, and the construction of a system sufficiently large to obtain meaningful data on the electrolytic recovery of zinc from zinc chloride has been initiated.

  14. Photovoltaic cell array

    Science.gov (United States)

    Eliason, J. T. (Inventor)

    1976-01-01

    A photovoltaic cell array consisting of parallel columns of silicon filaments is described. Each fiber is doped to produce an inner region of one polarity type and an outer region of an opposite polarity type to thereby form a continuous radial semi conductor junction. Spaced rows of electrical contacts alternately connect to the inner and outer regions to provide a plurality of electrical outputs which may be combined in parallel or in series.

  15. Multicolor generation using silicon nanodisk absorber

    International Nuclear Information System (INIS)

    A multicolored matrix that spans the visible range was demonstrated by using silicon nanodisk arrays. A nanostructured silicon substrate, which featured periodic silicon nanodisk arrays of various diameters, inter-nanodisk distances, and heights, was fabricated using electron-beam lithography and reactive ion etching. These silicon nanodisks were able to support HE1m leaky modes, which depended on the diameter of the nanodisks, resulting in wavelength-dependent reflection spectra. The resonant wavelength redshifted linearly with the increasing nanodisk diameter. The output color lay in the visible range and was observed to be tunable when varying the diameter, interdistance, and height. The results of finite-difference time-domain simulations exhibited close agreement with the observed optical properties of the periodic silicon nanodisk arrays

  16. Kilopixel X-Ray Microcalorimeter Arrays for Astrophysics: Device Performance and Uniformity

    Science.gov (United States)

    Eckart, M. E.; Adams, J. S.; Bailey, C. N.; Bandler, S. R.; Busch, S. E.; Chervenak, J. A.; Finkbeiner, F. M.; Kelley, R. L.; Kilbourne, C. A.; Porter, F. S.; Porst, J.-P.; Sadleir, J. E.; Smith, S. J.

    2012-01-01

    We are developing kilopixel arrays of TES microcalorimeters to enable high-resolution x-ray imaging spectrometers for future x-ray observatories and laboratory astrophysics experiments. Our current array design was targeted as a prototype for the X-ray Microcalorimeter Spectrometer proposed for the International X-ray Observatory, which calls for a 40×40-pixel core array of 300 micron devices with 2.5 eV energy resolution (at 6 keV). Here we present device characterization of our 32×32 arrays, including x-ray spectral performance of individual pixels within the array. We present our results in light of the understanding that our Mo/Au TESs act as weak superconducting links, causing the TES critical current (I(sub c)) and transition shape to oscillate with applied magnetic field (B). We show I(sub c)(B) measurements and discuss the uniformity of these measurements across the array, as well as implications regarding the uniformity of device noise and response. In addition, we are working to reduce pixel-to-pixel electrical and thermal crosstalk; we present recent test results from an array that has microstrip wiring and an angle-evaporated copper backside heatsinking layer, which provides copper coverage on the four sidewalls of the silicon wells beneath each pixel.

  17. Micromachined silicon acoustic delay line with 3D-printed micro linkers and tapered input for improved structural stability and acoustic directivity

    Science.gov (United States)

    Cho, Y.; Kumar, A.; Xu, S.; Zou, J.

    2016-10-01

    Recent studies have shown that micromachined silicon acoustic delay lines can provide a promising solution to achieve real-time photoacoustic tomography without the need for complex transducer arrays and data acquisition electronics. To achieve deeper imaging depth and wider field of view, a longer delay time and therefore delay length are required. However, as the length of the delay line increases, it becomes more vulnerable to structural instability due to reduced mechanical stiffness. In this paper, we report the design, fabrication, and testing of a new silicon acoustic delay line enhanced with 3D printed polymer micro linker structures. First, mechanical deformation of the silicon acoustic delay line (with and without linker structures) under gravity was simulated by using finite element method. Second, the acoustic crosstalk and acoustic attenuation caused by the polymer micro linker structures were evaluated with both numerical simulation and ultrasound transmission testing. The result shows that the use of the polymer micro linker structures significantly improves the structural stability of the silicon acoustic delay lines without creating additional acoustic attenuation and crosstalk. In addition, the improvement of the acoustic acceptance angle of the silicon acoustic delay lines was also investigated to better suppress the reception of unwanted ultrasound signals outside of the imaging plane. These two improvements are expected to provide an effective solution to eliminate current limitations on the achievable acoustic delay time and out-of-plane imaging resolution of micromachined silicon acoustic delay line arrays.

  18. The electrophotonic silicon biosensor

    Science.gov (United States)

    Juan-Colás, José; Parkin, Alison; Dunn, Katherine E.; Scullion, Mark G.; Krauss, Thomas F.; Johnson, Steven D.

    2016-01-01

    The emergence of personalized and stratified medicine requires label-free, low-cost diagnostic technology capable of monitoring multiple disease biomarkers in parallel. Silicon photonic biosensors combine high-sensitivity analysis with scalable, low-cost manufacturing, but they tend to measure only a single biomarker and provide no information about their (bio)chemical activity. Here we introduce an electrochemical silicon photonic sensor capable of highly sensitive and multiparameter profiling of biomarkers. Our electrophotonic technology consists of microring resonators optimally n-doped to support high Q resonances alongside electrochemical processes in situ. The inclusion of electrochemical control enables site-selective immobilization of different biomolecules on individual microrings within a sensor array. The combination of photonic and electrochemical characterization also provides additional quantitative information and unique insight into chemical reactivity that is unavailable with photonic detection alone. By exploiting both the photonic and the electrical properties of silicon, the sensor opens new modalities for sensing on the microscale. PMID:27624590

  19. Deep Ultraviolet Macroporous Silicon Filters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase I proposal describes a novel method to make deep and far UV optical filters from macroporous silicon. This type of filter consists of an array of...

  20. Integrated silicon microspectrometers

    OpenAIRE

    Kong, S. H.; Correia, J. H.; Bartek, M.; Wolffenbuttel, R.F.

    2001-01-01

    Microspectrometers, which read color and the results from analytical chemistry, are used for quality inspection in industry and agiculture. They read the chromatography results by measuring the infrared (IR) absorption of the chemical constituent between the IR source and the grating. Micromachining can implement the dispersion and detection elements in a silicon microspectrometer so that it can analyze the spectrum of incident light. The microspectrometer may either operate an array of de...

  1. Bolometric Arrays for Millimeter Wavelengths

    Science.gov (United States)

    Castillo, E.; Serrano, A.; Torres-Jácome, A.

    2009-11-01

    During last years, semiconductor bolometers using thin films have been developed at INAOE, specifically boron-doped hydrogenated amorphous silicon films. The characteristics shown by these devices made them attractive to be used in astronomical instrumentation, mainly in two-dimentional arrays. These detector arrays used at the Large Millimeter Telescope will make possible to obtain astronomical images in millimeter and sub-millimeter wavelengths. With this in mind, we are developing a method to produce, with enough reliability, bolometer arrays at INAOE. Until now, silicon nitride diaphragm arrays, useful as radiation absorbers, have succesfully been obtained. Sizes going from one to four millimeter by element in a consistent way; however we have not tested thermometers and metallic contact deposition yet. At the same time, we are working on two possible configurations for the readout electronics; one of them using commercial components while the other will be an integrated circuit specifically designed for this application. Both versions will work below 77K.

  2. Silicon detectors

    International Nuclear Information System (INIS)

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  3. Nanopatterned front contact for broadband absorption in ultra-thin amorphous silicon solar cells

    OpenAIRE

    Massiot, I.; Colin, Clément; Péré-Laperne, Nicolas; Roca I Cabarrocas, Pere; Sauvan, Christophe; Lalanne, Philippe; Pelouard, Jean-Luc; Collin, Stéphane

    2012-01-01

    International audience Broadband light trapping is numerically demonstrated in ultra-thin solar cells composed of a flat amorphous silicon absorber layer deposited on a silver mirror. A one-dimensional silver array is used to enhance light absorption in the visible spectral range with low polarization and angle dependencies. In addition, the metallic nanowires play the role of transparent electrodes. We predict a short-circuit current density of 14:6mA=cm2 for a solar cell with a 90 nm-thi...

  4. Array of planar waveguide lasers with 50 GHz frequency spacing

    DEFF Research Database (Denmark)

    Guldberg-Kjær, Søren Andreas; Laurent-Lund, Christian; Sckerl, Mads W.

    1999-01-01

    Waveguide laser arrays are demonstrated using planar silica-on-silicon technology. Excellent control over frequency separation is obtained with a single phase mask.......Waveguide laser arrays are demonstrated using planar silica-on-silicon technology. Excellent control over frequency separation is obtained with a single phase mask....

  5. Picosecond Pulse Laser Microstructuring of silicon

    Institute of Scientific and Technical Information of China (English)

    赵明; 尹钢; 朱京涛; 赵利

    2003-01-01

    We report the experimental results of picosecond pulse laser microstructuring (pulse duration 35ps, wavelength 1.06μm, repetition rate 10Hz) of silicon using the direct focusing technique. Arrays of sharp conical spikes located below the initial surface have been formed by cumulative picosecond pulsed laser irradiation of silicon in SF6. Irradiation of silicon surface in air, N2, or vacuum creates ripple-like patterns, but does not create the sharp conical spikes.

  6. Volumetric Flow Measurement Using an Implantable CMUT Array.

    Science.gov (United States)

    Mengli Wang; Jingkuang Chen

    2011-06-01

    This paper describes volumetric-flow velocity measurement using an implantable capacitive micromachined ultrasonic transducer (CMUT) array. The array is comprised of multiple-concentric CMUT rings for ultrasound transmission and an outmost annular CMUT array for ultrasound reception. Microelectromechanical-system (MEMS) fabrication technology allows reception CMUT on this flowmeter to be implemented with a different membrane thickness and gap height than that of transmission CMUTs, optimizing the performance of these two different kinds of devices. The silicon substrate of this 2-mm-diameter CMUT ring array was bulk micromachined to approximately 80 to 100 μm thick, minimizing tissue disruption. The blood-flow velocity was detected using pulse ultrasound Doppler by comparing the demodulated echo ultrasound with the incident ultrasound. The demodulated ultrasound signal was sampled by a pulse delayed in time domain from the transmitted burst, which corresponds to detecting the signal at a specific distance. The flow tube/vessel diameter was detected through the time-flight delay difference from near and far wall reflections, which was measured from the ultrasound pulse echo. The angle between the ultrasound beam and the flow was found by using the cross-correlation from consecutive ultrasound echoes. Artificial blood flowing through three different polymer tubes was experimented with, while keeping the same volumetric flow rate. The discrepancy in flow measurement results between this CMUT meter and a calibrated laser Doppler flowmeter is less than 5%. PMID:23851472

  7. Large-Aperture Wide-Bandwidth Anti-Reflection-Coated Silicon Lenses for Millimeter Wavelengths

    Science.gov (United States)

    Datta, R.; Munson, C. D.; Niemack, M. D.; McMahon, J. J.; Britton, J.; Wollack, E. J.; Beall, J.; Devlin, M. J.; Fowler, J.; Gallardo, P.; Hubmayr, J.; Irwin, K.; Newburgh, L.; Nibarger, J. P.; Page, L.; Quijada, M. A.; Schmitt, B. L.; Staggs, S. T.; Thornton, R.; Zhang, L.

    2013-01-01

    The increasing scale of cryogenic detector arrays for sub-millimeter and millimeter wavelength astrophysics has led to the need for large aperture, high index of refraction, low loss, cryogenic refracting optics. Silicon with n = 3.4, low loss, and relatively high thermal conductivity is a nearly optimal material for these purposes, but requires an antireflection (AR) coating with broad bandwidth, low loss, low reflectance, and a matched coffecient of thermal expansion. We present an AR coating for curved silicon optics comprised of subwavelength features cut into the lens surface with a custom three axis silicon dicing saw. These features constitute a metamaterial that behaves as a simple dielectric coating. We have fabricated and coated silicon lenses as large as 33.4 cm in diameter with coatings optimized for use between 125-165 GHz. Our design reduces average reflections to a few tenths of a percent for angles of incidence up to 30 deg. with low cross-polarization. We describe the design, tolerance, manufacture, and measurements of these coatings and present measurements of the optical properties of silicon at millimeter wavelengths at cryogenic and room temperatures. This coating and lens fabrication approach is applicable from centimeter to sub-millimeter wavelengths and can be used to fabricate coatings with greater than octave bandwidth.

  8. Large-aperture Wide-bandwidth Antireflection-coated Silicon Lenses for Millimeter Wavelengths

    Science.gov (United States)

    Datta, R.; Munson, C. D.; Niemack, M. D.; McMahon, J. J.; Britton, J.; Wollack, Edward J.; Beall, J.; Devlin, M. J.; Fowler, J.; Gallardo, P.; Hubmayr, J.; Irwin, K.; Newburgh, L.; Nibarger, J. P.; Page, L.; Quijada, Manuel A.; Schmitt, B. L.; Staggs, S. T.; Thornton, R.; Zhang, L.

    2013-01-01

    The increasing scale of cryogenic detector arrays for submillimeter and millimeter wavelength astrophysics has led to the need for large aperture, high index of refraction, low loss, cryogenic refracting optics. Silicon with n 3.4, low loss, and high thermal conductivity is a nearly optimal material for these purposes but requires an antireflection (AR) coating with broad bandwidth, low loss, low reflectance, and a matched coefficient of thermal expansion. We present an AR coating for curved silicon optics comprised of subwavelength features cut into the lens surface with a custom three-axis silicon dicing saw. These features constitute a metamaterial that behaves as a simple dielectric coating.We have fabricated silicon lenses as large as 33.4 cm in diameter with micromachined layers optimized for use between 125 and 165 GHz. Our design reduces average reflections to a few tenths of a percent for angles of incidence up to 30deg with low cross polarization.We describe the design, tolerance, manufacture, and measurements of these coatings and present measurements of the optical properties of silicon at millimeter wavelengths at cryogenic and room temperatures. This coating and lens fabrication approach is applicable from centimeter to submillimeter wavelengths and can be used to fabricate coatings with greater than octave bandwidth.

  9. 基于二次虚拟孔径扩展的双基地MIMO雷达相干分布式目标中心角度估计%Central Angle Estimation of Coherently Distributed Sources for Bistatic MIMO Radar Based on Second Virtual Array Aperture Extension

    Institute of Scientific and Technical Information of China (English)

    徐旭宇; 李小波; 梁浩; 牛朝阳; 董杰

    2014-01-01

    A new central angle estimation method of the coherently distributed sources for bistatic MIMO radar is proposed based on second virtual array aperture extension. Firstly, the bistatic MIMO radar data model for the coherently distributed sources with the identical deterministic angular distribution function and distribution parameter is built based on nonuniform array. The second virtual array aperture extension is also realized by the colocated difference arrays of the minimum redundancy arrays. Furthermore, the new correlation matrix is obtained via transformal, eliminating redundant and changeable dimensional matrix. Finally, the central angles of DODs and DOAs are estimated without pairing algorithm by the idea of ESPRIT. Because of the second virtual array aperture extension, the proposed method provides much more parameter identifiability and better parameter estimation performance than the conventional bistatic MIMO radar. The effectiveness of the proposed method is verified with the computer simulation.%该文提出了基于二次虚拟孔径扩展的双基地MIMO雷达相干分布式目标中心角度估计算法。首先构造了基于非均匀阵列的具有相同确定性角信号分布函数和分布参数的相干分布式目标的双基地MIMO雷达信号模型,再利用基于最小冗余的差分共置阵列思想,实现了阵元二次虚拟扩展;然后通过构造置换、去冗余和换维矩阵,得到了新的协方差矩阵;最后利用 ESPRIT 算法思想,估计出相干分布式目标的发射、接收中心角,并且实现了角度参数的自动配对。由于该文算法实现了阵元二次虚拟扩展,因此相比于传统MIMO雷达能识别更多的目标,具有更高的估计精度。实验仿真结果证明了该文算法的有效性。

  10. Photoluminescence and electron field-emission properties of SiC–SiO{sub 2} core–shell fibers and 3C–SiC nanowires on silicon nanoporous pillar array

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Haiyan, E-mail: wanghaiyan@zzuli.edu.cn [Department of Technological Physics, Zhengzhou University of Light Industry, Zhengzhou 450002 (China); Jiang, Weifen [Department of Mathematics and Information Science, North China Institute of Water Conservancy and Hydroelectric Power, Zhengzhou 450011 (China); Kang, Liping; Li, Zijiong [Department of Technological Physics, Zhengzhou University of Light Industry, Zhengzhou 450002 (China)

    2013-03-15

    Highlights: ► SiC–SiO{sub 2} fibers and 3C–SiC nanowires were directly grown on Si-NPA. ► Violet–blue light emitting were obtained in SiC–SiO{sub 2}/Si-NPA and nw-SiC/Si-NPA. ► Enhanced field-emission property was found in nw-SiC/Si-NPA. -- Abstract: SiC–SiO{sub 2} core–shell fibers and 3C–SiC nanowires (nw-SiC) were grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition method with nickel as the catalyst. The morphology, structure and composition of SiC–SiO{sub 2}/Si-NPA and nw-SiC/Si-NPA were characterized by scanning electron microscopy, transmission electron microscopy and X-ray diffraction. Based on the experimental results a possible growth mechanism of nw-SiC was explained. Two broad photoluminescence peaks located at ∼409 and ∼494 nm were observed both in SiC–SiO{sub 2}/Si-NPA and nw-SiC/Si-NPA when they were excited utilizing 300 nm fluorescent light at room temperature. The field-emission (FE) measurements showed that enhanced FE property was obtained in nw-SiC/Si-NPA. The excellent optical and field-emission performances of SiC–SiO{sub 2}/Si-NPA and nw-SiC/Si-NPA were mainly attributed to the quantum confinement effects in nw-SiC and the nanometer-micron hierarchy structure of the composite systems.

  11. The effects of DRIE operational parameters on vertically aligned micropillar arrays

    Science.gov (United States)

    Miller, Kane; Li, Mingxiao; Walsh, Kevin M.; Fu, Xiao-An

    2013-03-01

    Vertically aligned silicon micropillar arrays have been created by deep reactive ion etching (DRIE) and used for a number of microfabricated devices including microfluidic devices, micropreconcentrators and photovoltaic cells. This paper delineates an experimental design performed on the Bosch process of DRIE of micropillar arrays. The arrays are fabricated with direct-write optical lithography without photomask, and the effects of DRIE process parameters, including etch cycle time, passivation cycle time, platen power and coil power on profile angle, scallop depth and scallop peak-to-peak distance are studied by statistical design of experiments. Scanning electron microscope images are used for measuring the resultant profile angles and characterizing the scalloping effect on the pillar sidewalls. The experimental results indicate the effects of the determining factors, etch cycle time, passivation cycle time and platen power, on the micropillar profile angles and scallop depths. An optimized DRIE process recipe for creating nearly 90° and smooth surface (invisible scalloping) has been obtained as a result of the statistical design of experiments.

  12. Fabrication of moth-eye structures on silicon by direct six-beam laser interference lithography

    International Nuclear Information System (INIS)

    This paper presents a new method for the generation of cross-scale laser interference patterns and the fabrication of moth-eye structures on silicon. In the method, moth-eye structures were produced on a surface of silicon wafer using direct six-beam laser interference lithography to improve the antireflection performance of the material surface. The periodic dot arrays of the moth-eye structures were formed due to the ablation of the irradiance distribution of interference patterns on the wafer surface. The shape, size, and distribution of the moth-eye structures can be adjusted by controlling the wavelength, incidence angles, and exposure doses in a direct six-beam laser interference lithography setup. The theoretical and experimental results have shown that direct six-beam laser interference lithography can provide a way to fabricate cross-scale moth-eye structures for antireflection applications.

  13. 碳纳米管/硅纳米孔柱阵列的场发射性能%Field Emission Properties of Multi-walled Carbon Nanotubes Grown on Silicon Nanoporous Pillar Array

    Institute of Scientific and Technical Information of China (English)

    姜卫粉; 李隆玉; 肖顺华; 杨晓辉; 贾敏; 李新建

    2007-01-01

    Multi-walled carbon nanotubes (CNTs) were grown on a silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition. Surface morphologies and microstructure of the resultant were studied by a field emission scanning electron microscope, Raman spectrum, transmission electron microscope, and highresolution transmission electron microscopy. The composition of samples was determined by energy dispersive X-ray spectroscopy (EDS). The results showed that a great deal of CNTs, with diameter in the range of 20-70 nm, incorporated with Si-NPA and a large scale nest array of CNTs/Si-NPA (NACNT/Si-NPA)was formed. EDS analysis showed that the composition of carbon nanotubes was carbon. Field emission measurements showed that a current density of 5 mA/cm2 was obtained at an electric field of 4.26 V/μm, with a turn-on field of 1.3 V/μm. The enhancement factor calculated according to the Fowler-Nordheim theory was ~11,000. This excellent field emission performance is attributed to the unique structure and morphology of NACNT/Si-NPA, especially the formation of a nest-shaped carbon nanotube array. A schematic drawing that illustrates the experimental configuration is given. These results indicate that NACNT/Si-NPA might be an ideal candidate cathode for potential applications in flat panel displays.%通过热化学气相沉积的方法将碳纳米管生长到硅纳米孔柱阵列衬底上.采用场发射扫描电子显微镜、透射电子显微镜、高分辨透射电子显微镜、拉曼光谱和X射线能谱对所制备的样品形貌、组成进行了分析.分析结果发现,所制备产物为一种具有面积大、准周期性的碳纳米管/硅巢状阵列复合结构.能谱分析表明碳纳米管仅含有碳元素.对样品进行场发射性能测试表明该结构开启电压为1.3 V/μm,当外加电压为4.26 V/μm,发射电流为5 mA/cm2.由FN公式计算相应的场增强因子约为1.1×104.碳纳米管/硅纳米孔柱阵列好的场发射性能

  14. Antifuse with a single silicon-rich silicon nitride insulating layer

    Science.gov (United States)

    Habermehl, Scott D.; Apodaca, Roger T.

    2013-01-22

    An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

  15. Infrared-Bolometer Arrays with Reflective Backshorts

    Science.gov (United States)

    Miller, Timothy M.; Abrahams, John; Allen, Christine A.

    2011-01-01

    Integrated circuits that incorporate square arrays of superconducting-transition- edge bolometers with optically reflective backshorts are being developed for use in image sensors in the spectral range from far infrared to millimeter wavelengths. To maximize the optical efficiency (and, thus, sensitivity) of such a sensor at a specific wavelength, resonant optical structures are created by placing the backshorts at a quarter wavelength behind the bolometer plane. The bolometer and backshort arrays are fabricated separately, then integrated to form a single unit denoted a backshort-under-grid (BUG) bolometer array. In a subsequent fabrication step, the BUG bolometer array is connected, by use of single-sided indium bump bonding, to a readout device that comprises mostly a superconducting quantum interference device (SQUID) multiplexer circuit. The resulting sensor unit comprising the BUG bolometer array and the readout device is operated at a temperature below 1 K. The concept of increasing optical efficiency by use of backshorts at a quarter wavelength behind the bolometers is not new. Instead, the novelty of the present development lies mainly in several features of the design of the BUG bolometer array and the fabrication sequence used to implement the design. Prior to joining with the backshort array, the bolometer array comprises, more specifically, a square grid of free-standing molybdenum/gold superconducting-transition-edge bolometer elements on a 1.4- m-thick top layer of silicon that is part of a silicon support frame made from a silicon-on-insulator wafer. The backshort array is fabricated separately as a frame structure that includes support beams and contains a correspond - ing grid of optically reflective patches on a single-crystal silicon substrate. The process used to fabricate the bolometer array includes standard patterning and etching steps that result in the formation of deep notches in the silicon support frame. These notches are designed to

  16. Ductile cutting of silicon microstructures with surface inclination measurement and compensation by using a force sensor integrated single point diamond tool

    Science.gov (United States)

    Chen, Yuan-Liu; Cai, Yindi; Shimizu, Yuki; Ito, So; Gao, Wei; Ju, Bing-Feng

    2016-02-01

    This paper presents a measurement and compensation method of surface inclination for ductile cutting of silicon microstructures by using a diamond tool with a force sensor based on a four-axis ultra-precision lathe. The X- and Y-directional inclinations of a single crystal silicon workpiece with respect to the X- and Y-motion axes of the lathe slides were measured respectively by employing the diamond tool as a touch-trigger probe, in which the tool-workpiece contact is sensitively detected by monitoring the force sensor output. Based on the measurement results, fabrication of silicon microstructures can be thus carried out directly along the tilted silicon workpiece by compensating the cutting motion axis to be parallel to the silicon surface without time-consuming pre-adjustment of the surface inclination or turning of a flat surface. A diamond tool with a negative rake angle was used in the experiment for superior ductile cutting performance. The measurement precision by using the diamond tool as a touch-trigger probe was investigated. Experiments of surface inclination measurement and ultra-precision ductile cutting of a micro-pillar array and a micro-pyramid array with inclination compensation were carried out respectively to demonstrate the feasibility of the proposed method.

  17. Perception of perspective angles

    NARCIS (Netherlands)

    Erkelens, C.J.

    2015-01-01

    We perceive perspective angles, that is, angles that have an orientation in depth, differently from what they are in physical space. Extreme examples are angles between rails of a railway line or between lane dividers of a long and straight road. In this study, subjects judged perspective angles bet

  18. Silicon infrared diffuser for wireless communication

    Science.gov (United States)

    Massera, Ettore; Rea, Ilaria; Nasti, Ivana; Maddalena, Pasqualino; di Francia, Girolamo

    2006-09-01

    We show what we believe to be a novel way to use silicon in infrared radio communication as a suitable material for the realization of optical diffusers in the range of 850-1600 nm. A crystalline silicon wafer is made porous by means of electrochemical etching. The porous silicon produced is optically characterized, and measurements report a high reflectance in the band of interest. We also study the angular distribution of diffused radiation by the porous silicon surface at different angles of incident radiation. Measurements show that radiation diffuses in a quasi-Lambertian manner, confirming the good performance of this material as an incident radiation diffuser.

  19. Iron Oxide Arrays Prepared from Ferrocene- and Silsesquioxane-Containing Block Copolymers

    Directory of Open Access Journals (Sweden)

    Raita Goseki

    2012-01-01

    Full Text Available Arrays of iron oxides as precursors of iron clusters were prepared by oxygen plasma treatment of block copolymer microphase-separated nanostructures in thin films. Block copolymers composed of ferrocene-containing and silsesquioxane-containing polymethacrylate (PMAPOSS-b-PMAHFC were successfully prepared, with different molecular weights and compositions and narrow molecular weight distributions, by living anionic polymerization. The formed microphase-separated nanostructures in the bulk were characterized by wide- and small-angle X-ray scattering (WAXS and SAXS, scanning electron microscopy (SEM, and transmission electron microscopy (TEM. Thin films were prepared from a solution of PMAPOSS-b-PMAHFC in tetrahydrofuran by spin coating onto silicon wafers. Fingerprint-type line nanostructures were formed in the PMAPOSS-b-PMAHFCs thin films after solvent annealing with carbon disulfide. Oxygen plasma treatment provided the final line arrays of iron oxides based on the formed nanostructural patterns.

  20. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  1. Lithium diffusion in silicon and induced structure disorder: A molecular dynamics study

    OpenAIRE

    Huanyu Wang; Xiao Ji; Chi Chen; Kui Xu; Ling Miao

    2013-01-01

    Using molecular dynamics method, we investigate the diffusion property of lithium in different silicon structures and silicon structure's disorder extent during lithium's diffusion process. We find that the pathway and the incident angle between the direction of barrier and diffusion of lithium are also the essential factors to the lithium's diffusion property in silicon anode besides the barrier. Smaller incident angle could decrease the scattering of lithium in silicon structure effectively...

  2. Patterned Array of Poly(ethylene glycol) Silane Monolayer for Label-Free Detection of Dengue.

    Science.gov (United States)

    Rosly, Nor Zida; Ahmad, Shahrul Ainliah Alang; Abdullah, Jaafar; Yusof, Nor Azah

    2016-01-01

    In the present study, the construction of arrays on silicon for naked-eye detection of DNA dengue was demonstrated. The array was created by exposing a polyethylene glycol (PEG) silane monolayer to 254 nm ultraviolet (UV) light through a photomask. Formation of the PEG silane monolayer and photomodifed surface properties was thoroughly characterized by using atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and contact angle measurements. The results of XPS confirmed that irradiation of ultraviolet (UV) light generates an aldehyde functional group that offers conjugation sites of amino DNA probe for detection of a specific dengue virus target DNA. Employing a gold enhancement process after inducing the electrostatic interaction between positively charged gold nanoparticles and the negatively charged target DNA hybridized to the DNA capture probe allowed to visualize the array with naked eye. The developed arrays demonstrated excellent performance in diagnosis of dengue with a detection limit as low as 10 pM. The selectivity of DNA arrays was also examined using a single base mismatch and noncomplementary target DNA. PMID:27571080

  3. Large-aperture wide-bandwidth antireflection-coated silicon lenses for millimeter wavelengths

    CERN Document Server

    Datta, R; Niemack, M D; McMahon, J J; Britton, J; Wollack, E J; Beall, J; Devlin, M J; Fowler, J; Gallardo, P; Hubmayr, J; Irwin, K; Newburgh, L; Nibarger, J P; Page, L; Quijada, M A; Schmitt, B L; Staggs, S T; Thornton, R; Zhang, L

    2013-01-01

    The increasing scale of cryogenic detector arrays for sub-millimeter and millimeter wavelength astrophysics has led to the need for large aperture, high index of refraction, low loss, cryogenic refracting optics. Silicon with n = 3.4, low loss, and relatively high thermal conductivity is a nearly optimal material for these purposes, but requires an antireflection (AR) coating with broad bandwidth, low loss, low reflectance, and a matched coefficient of thermal expansion. We present an AR coating for curved silicon optics comprised of subwavelength features cut into the lens surface with a custom three axis silicon dicing saw. These features constitute a metamaterial that behaves as a simple dielectric coating. We have fabricated and coated silicon lenses as large as 33.4 cm in diameter with coatings optimized for use between 125-165 GHz. Our design reduces average reflections to a few tenths of a percent for angles of incidence up to 30 degrees with low cross-polarization. We describe the design, tolerance, m...

  4. Silicon Geiger mode avalanche photodiodes

    Institute of Scientific and Technical Information of China (English)

    M. Mazzillo; S. Billotta; G. Bonanno; A. Campisi; L. Cosentino; P. Finocchiaro; F. Musumeci; S.Privitera; S. Tudisco; G. Condorelli; D. Sanfilippo; G. Fallica; E. Sciacca; S. Aurite; S. Lombardo; E. Rlmini; M. Belluso

    2007-01-01

    In this letter we present the results regarding the electrical and optical characterization of Geiger mode silicon avalanche photodiodes (GMAP) fabricated by silicon standard planar technology. Low dark count rates, negligible afterpulsing effects,good timing resolution and high quantum detection efficiency in all the visible range have been measured. The very good electro-optical performances of our photodiodes make them attractive for the fabrication of arrays with a large number of GMAP to be used both in the commercial and the scientific fields, as telecommunications and nuclear medical imaging.

  5. Cosmic ray effects in microcalorimeter arrays

    Energy Technology Data Exchange (ETDEWEB)

    Stahle, C.K. E-mail: cak@lheapop.gsfc.nasa.gov; Boyce, K.R.; Brown, G.V.; Cottam, J.; Figueroa-Feliciano, E.; Galeazzi, M.; Kelley, R.L.; McCammon, D.; Porter, F.S.; Szymkowiak, A.E.; Tillotson, W.A

    2004-03-11

    We have identified signals resulting from cosmic rays and environmental gamma rays depositing energy in the pixels and in the silicon frame of the Astro-E2/X-Ray Spectrometer microcalorimeter array. Coincidences between pixels and between the array and an anti-coincidence detector determined the nature of the events. Pulse shapes and amplitudes from the cosmic ray events helped refine the thermal model of the array chip. We discuss how future arrays can be optimized either for the greatest background rejection or for the highest source count rates.

  6. QUEST: wide angle Cherenkov light measurements at EAS-TOP

    Science.gov (United States)

    EAS-Top Collaboration; Korosteleva, E. E.; Kuzmichev, L. A.; Prosin, V. V.; Lubsandorzhiev, B. K.

    Wide angle Cherenkov light detectors based upon the QUASAR-370 photo-multipliers have been installed on five Cherenkov telescopes of the EAS-TOP array to study the energy spectrum and composition of primary cosmic rays around the knee . The energy threshold of quasars array was close to that of EAS-TOP electromagnetic detectors array. The first results of joint analysis of Cherenkov and electromagnetic data together with the adequate CORSIKA simulation results are discussed.

  7. Imaging antenna array at 119 microns. [for plasma diagnostics

    Science.gov (United States)

    Neikirk, N. P.; Tong, P. P.; Putledge, D. B.; Park, H.; Young, P. E.

    1982-01-01

    A focal-plane imaging antenna array has been demonstrated at 119 microns. The array is a line of evaporated silver bow-tie antennas with bismuth microbolometer detectors on a silicon substrate. Radiation is coupled into the array by a lens placed on the back of the substrate. The bolometers are thermally isolated from the silicon substrate with a half-micron layer of polyimide. The array performance is demonstrated by coherent imaging of a series of holes at half the diffraction-limited cut-off frequency.

  8. Mid-Infrared nonlinear silicon photonics

    OpenAIRE

    Liu, Xiaoping; Kuyken, Bart; Green, William M. J.; Osgood, Richard M.; Baets, Roel; Roelkens, Günther

    2014-01-01

    Recently there has been a growing interest in mid-infrared (mid-IR) photonic technology with a wavelength of operation approximately from 2-14 mu m. Among several established mid-IR photonic platforms, silicon nanophotonic platform could potentially offer ultra-compact, and monolithically integrated mid-IR photonic devices and device arrays, which could have board impact in the mid-IR technology, such as molecular spectroscopy, and imaging. At room temperature, silicon has a bandgap similar t...

  9. Semiconductor Nanomembrane based Flight Sensors and Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The NASA Phase I program would develop and demonstrate semiconductor nanomembrane (NM) based flight sensors and arrays on flexible substrates, using SOI (Silicon on...

  10. Miniature Sensor Node with Conformal Phased Array

    Directory of Open Access Journals (Sweden)

    W. De Raedt

    2011-12-01

    Full Text Available This paper reports on the design and fabrication of a fully integrated antenna beam steering concept for wireless sensor nodes. The conformal array circumcises four cube faces with a silicon core mounted on each face. Every silicon core represents a 2 by 1 antenna array with an antenna element consisting of a dipole antenna, a balun, and a distributed MEMS phase shifter. All these components are based on a single wafer process and designed to work at 17.2 GHz. Simulations of the entire system and first results of individual devices are reported.

  11. Modeling crosstalk in silicon photomultipliers

    OpenAIRE

    Gallego, L.; Rosado Vélez, Jaime; Arqueros Martínez, Fernando

    2013-01-01

    Optical crosstalk seriously limits the photon-counting resolution of silicon photomultipliers. In this work, realistic analytical models to describe the crosstalk effects on the response of these photodetectors are presented and compared with experimental data. The proposed models are based on the hypothesis that each pixel of the array has a finite number of available neighboring pixels to excite via crosstalk. Dead-time effects and geometrical aspects of the propagation of crosstalk between...

  12. Silicon Sheet Growth Development for the Large Area Sheet Task of the Low Cost Solar Array Project. Heat Exchanger Method - Ingot Casting Fixed Abrasive Method - Multi-Wire Slicing

    Science.gov (United States)

    Schmid, F.; Khattak, C. P.

    1978-01-01

    Solar cells fabricated from HEM cast silicon yielded up to 15% conversion efficiencies. This was achieved in spite of using unpurified graphite parts in the HEM furnace and without optimization of material or cell processing parameters. Molybdenum retainers prevented SiC formation and reduced carbon content by 50%. The oxygen content of vacuum cast HEM silicon is lower than typical Czochralski grown silicon. Impregnation of 45 micrometers diamonds into 7.5 micrometers copper sheath showed distortion of the copper layer. However, 12.5 micrometers and 15 micrometers copper sheath can be impregnated with 45 micrometers diamonds to a high concentration. Electroless nickel plating of wires impregnated only in the cutting edge showed nickel concentration around the diamonds. This has the possibility of reducing kerf. The high speed slicer fabricated can achieve higher speed and longer stroke with vibration isolation.

  13. Maskless inverted pyramid texturization of silicon.

    Science.gov (United States)

    Wang, Yan; Yang, Lixia; Liu, Yaoping; Mei, Zengxia; Chen, Wei; Li, Junqiang; Liang, Huili; Kuznetsov, Andrej; Xiaolong, Du

    2015-06-02

    We discovered a technical solution of such outstanding importance that it can trigger new approaches in silicon wet etching processing and, in particular, photovoltaic cell manufacturing. The so called inverted pyramid arrays, outperforming conventional pyramid textures and black silicon because of their superior light-trapping and structure characteristics, can currently only be achieved using more complex techniques involving lithography, laser processing, etc. Importantly, our data demonstrate a feasibility of inverted pyramidal texturization of silicon by maskless Cu-nanoparticles assisted etching in Cu(NO3)2 / HF / H2O2 / H2O solutions and as such may have significant impacts on communities of fellow researchers and industrialists.

  14. Site specific isolated nanostructure array formation on a large area by broad ion beam without any mask and resist

    Science.gov (United States)

    Karmakar, Prasanta; Satpati, Biswarup

    2014-06-01

    We report the formation of isolated nanostructure arrays on a large area via broad ion beam implantation without the aid of any mask or resist. Desired ions have been implanted at specific locations of the prefabricated silicon ripple or triangular structures by exploiting the variation of local ion impact angles. We have shown that the implantation of Fe ions on an O+ ions induced pre fabricated triangular shaped patterned Si surface results in a self-organized periodic array of striped magnetic nanostructures having several micron length and about 50 nm width arranged with a spacial separation of ˜200 nm. The morphology, composition, crystalline structure, and magnetic property of these nanopatterns have been analyzed using high-resolution cross-sectional transmission electron microscopy and atomic force microscopy. A geometrical model has been proposed to explain the fundamental features of such ion-induced nanopattern structures.

  15. Site specific isolated nanostructure array formation on a large area by broad ion beam without any mask and resist

    International Nuclear Information System (INIS)

    We report the formation of isolated nanostructure arrays on a large area via broad ion beam implantation without the aid of any mask or resist. Desired ions have been implanted at specific locations of the prefabricated silicon ripple or triangular structures by exploiting the variation of local ion impact angles. We have shown that the implantation of Fe ions on an O+ ions induced pre fabricated triangular shaped patterned Si surface results in a self-organized periodic array of striped magnetic nanostructures having several micron length and about 50 nm width arranged with a spacial separation of ∼200 nm. The morphology, composition, crystalline structure, and magnetic property of these nanopatterns have been analyzed using high-resolution cross-sectional transmission electron microscopy and atomic force microscopy. A geometrical model has been proposed to explain the fundamental features of such ion-induced nanopattern structures.

  16. CAKE: The Coincidence Array for K600 Experiments

    CERN Document Server

    Adsley, P; Papka, P; Dyers, Z; Brümmer, J W; Diget, C Aa; Hubbard, N J; Li, K C W; Long, A; Marin-Lambarri, D J; Pellegri, L; Pesudo, V; Pool, L C; Smit, F D; Triambak, S

    2016-01-01

    The combination of a magnetic spectrometer and ancillary detectors such as silicon detectors is a powerful tool for the study of nuclear reactions and nuclear structure. This paper discusses the recently commissioned silicon array called the CAKE which is designed for use with the K600 magnetic spectrometer at iThemba LABS.

  17. Reading Angles in Maps

    Science.gov (United States)

    Izard, Véronique; O'Donnell, Evan; Spelke, Elizabeth S.

    2014-01-01

    Preschool children can navigate by simple geometric maps of the environment, but the nature of the geometric relations they use in map reading remains unclear. Here, children were tested specifically on their sensitivity to angle. Forty-eight children (age 47:15-53:30 months) were presented with fragments of geometric maps, in which angle sections…

  18. Through silicon via developments for silicon photomultiplier sensors

    Science.gov (United States)

    Jackson, C.; Wall, L.; O'Neill, K.; McGarvey, B.; Herbert, D.

    2015-03-01

    Packaging can have a significant impact on the performance characteristics of Silicon Photomultipliers (SiPM) sensors as well as having an impact on reliability and yield. To provide the highest performance possible, SensL have recently developed and tested a surface mount, through silicon via (TSV) package that provides high array fill factor, high photon detection efficiency (PDE) and magnetic resonance imaging (MRI) system compatibility. The PDE of TSV packaged sensors will be shown to be the highest when compared to traditional SiPM package types. In addition the PDE in the UV and blue region will be shown to approach that of unprotected bare die. Additionally, the TSV package has minimal deadspace outside of the active area which will be shown to allow close packing when used in a sensor array. It will be shown that arrays of TSV sensors have the highest fill factor currently possible when creating arrays from singulated die. Additionally, it will be shown that TSV parts are non-magnetic and results of images taken with the TSV SiPM in a 3 Tesla magnetic resonance imaging (MRI) system will be shown to have no impact on the MRI system.

  19. Array tomography: imaging stained arrays.

    Science.gov (United States)

    Micheva, Kristina D; O'Rourke, Nancy; Busse, Brad; Smith, Stephen J

    2010-11-01

    Array tomography is a volumetric microscopy method based on physical serial sectioning. Ultrathin sections of a plastic-embedded tissue are cut using an ultramicrotome, bonded in an ordered array to a glass coverslip, stained as desired, and imaged. The resulting two-dimensional image tiles can then be reconstructed computationally into three-dimensional volume images for visualization and quantitative analysis. The minimal thickness of individual sections permits high-quality rapid staining and imaging, whereas the array format allows reliable and convenient section handling, staining, and automated imaging. Also, the physical stability of the arrays permits images to be acquired and registered from repeated cycles of staining, imaging, and stain elution, as well as from imaging using multiple modalities (e.g., fluorescence and electron microscopy). Array tomography makes it possible to visualize and quantify previously inaccessible features of tissue structure and molecular architecture. However, careful preparation of the tissue is essential for successful array tomography; these steps can be time-consuming and require some practice to perfect. In this protocol, tissue arrays are imaged using conventional wide-field fluorescence microscopy. Images can be captured manually or, with the appropriate software and hardware, the process can be automated. PMID:21041399

  20. Array tomography: production of arrays.

    Science.gov (United States)

    Micheva, Kristina D; O'Rourke, Nancy; Busse, Brad; Smith, Stephen J

    2010-11-01

    Array tomography is a volumetric microscopy method based on physical serial sectioning. Ultrathin sections of a plastic-embedded tissue are cut using an ultramicrotome, bonded in an ordered array to a glass coverslip, stained as desired, and imaged. The resulting two-dimensional image tiles can then be reconstructed computationally into three-dimensional volume images for visualization and quantitative analysis. The minimal thickness of individual sections permits high-quality rapid staining and imaging, whereas the array format allows reliable and convenient section handling, staining, and automated imaging. Also, the physical stability of the arrays permits images to be acquired and registered from repeated cycles of staining, imaging, and stain elution, as well as from imaging using multiple modalities (e.g., fluorescence and electron microscopy). Array tomography makes it possible to visualize and quantify previously inaccessible features of tissue structure and molecular architecture. However, careful preparation of the tissue is essential for successful array tomography; these steps can be time consuming and require some practice to perfect. This protocol describes the sectioning of embedded tissues and the mounting of the serial arrays. The procedures require some familiarity with the techniques used for ultramicrotome sectioning for electron microscopy. PMID:21041397

  1. BOLOMETRIC ARRAYS FOR MILLIMETER WAVELENGTHS

    Directory of Open Access Journals (Sweden)

    E. Castillo

    2009-01-01

    Full Text Available During last years, semiconductor bolometers using thin lms have been developed at INAOE, speci cally boron-doped hydrogenated amorphous silicon lms. The characteristics shown by these devices made them attractive to be used in astronomical instrumentation, mainly in two-dimentional arrays. These detector arrays used at the Large Millimeter Telescope will make possible to obtain astronomical images in millimeter and submillimeter wavelengths. With this in mind, we are developing a method to produce, with enough reliability, bolometer arrays at INAOE. Until now, silicon nitride diaphragm arrays, useful as radiation absorbers, have succesfully been obtained. Sizes going from one to four millimeter by element in a consistent way; however we have not tested thermometers and metallic contact deposition yet. At the same time, we are working on two possible con gurations for the readout electronics; one of them using commercial components while the other will be an integrated circuit speci cally designed for this application. Both versions will work below 77K.

  2. Alternative materials for crystalline silicon solar cells - Risks and implications

    OpenAIRE

    Kwapil, Wolfram

    2010-01-01

    This thesis considers the use of alternative silicon materials for photovoltaics – often termed “upgraded metallurgical grade” silicon – from different angles and evaluates the risks and implications for the wafer and solar cell properties at selected steps along the entire process chain.The properties of the alternative, upgraded metallurgical grade silicon materials analyzed in the course of this thesis were governed by the simultaneous presence of boron and phosphorus in high concentration...

  3. Critically coupled surface phonon-polariton excitation in silicon carbide.

    Science.gov (United States)

    Neuner, Burton; Korobkin, Dmitriy; Fietz, Chris; Carole, Davy; Ferro, Gabriel; Shvets, Gennady

    2009-09-01

    We observe critical coupling to surface phonon-polaritons in silicon carbide by attenuated total reflection of mid-IR radiation. Reflectance measurements demonstrate critical coupling by a double scan of wavelength and incidence angle. Critical coupling occurs when prism coupling loss is equal to losses in silicon carbide and the substrate, resulting in maximal electric field enhancement. PMID:19724526

  4. Evaluation of selected chemical processes for production of low-cost silocon. (Phases I and II. ) Final report, October 9, 1975--July 9, 1978. Silicon Material Task, Low-Cost Solar Array Project

    Energy Technology Data Exchange (ETDEWEB)

    Blocher, J.M. Jr.; Browning, M.F.

    1978-07-09

    The zinc reduction of silicon tetrachloride in a fluidized bed of seed particles to yield a granular product was studied along with several modifications of the thermal decomposition or hydrogen reduction of silicon tetraiodide. Although all contenders were believed to be capable of meeting the quality requirements of the LSA Project, it was concluded that only the zinc reduction of the chloride could be made economically feasible at a cost below $10/kg silicon (1975 dollars). Accordingly, subsequent effort was limited to evaluating that process. A miniplant, consisting of a 5-cm-diameter fluidized-bed reactor and associated equipment was used to study the deposition parameters, temperature, reactant composition, seed particle size, bed depth, reactant throughput, and methods of reactant introduction. It was confirmed that the permissible range of fluidized-bed temperature was limited at the lower end by zinc condensation (918 C) and at higher temperatures by rapidly decreasing conversion efficiency (by 0.1 percent per degree C from 72 percent (thermodynamic) at 927 for a stoichiometric mixture). Use of a graded bed temperature was shown to increase the conversion efficiency over that obtained in an isothermal bed. Other aspects of the process such as the condensation and fused-salt electrolysis of the ZnCl/sub 2/ by-product for recycle of zinc and chlorine were studied to provide information required for design of a 50 MT/year experimental facility, visualized as the next stage in the development. Projected silicon costs of $7.35 and $8.71 per kg (1975 dollars) for a 1000 MT/year facilitywere obtained, depending upon the number and size of the fluidized-bed reactors and ZnCl/sub 2/ electrolytic cells used. An energy payback time of 5.9 months was calculated for the product silicon.

  5. Silicon Spintronics

    NARCIS (Netherlands)

    Jansen, R.

    2008-01-01

    Integration of magnetism and mainstream semiconductor electronics could impact information technology in ways beyond imagination. A pivotal step is implementation of spin-based electronic functionality in silicon devices. Remarkable progress made during the last two years gives confidence that this

  6. Solar maximum: solar array degradation

    International Nuclear Information System (INIS)

    The 5-year in-orbit power degradation of the silicon solar array aboard the Solar Maximum Satellite was evaluated. This was the first spacecraft to use Teflon R FEP as a coverglass adhesive, thus avoiding the necessity of an ultraviolet filter. The peak power tracking mode of the power regulator unit was employed to ensure consistent maximum power comparisons. Telemetry was normalized to account for the effects of illumination intensity, charged particle irradiation dosage, and solar array temperature. Reference conditions of 1.0 solar constant at air mass zero and 301 K (28 C) were used as a basis for normalization. Beginning-of-life array power was 2230 watts. Currently, the array output is 1830 watts. This corresponds to a 16 percent loss in array performance over 5 years. Comparison of Solar Maximum Telemetry and predicted power levels indicate that array output is 2 percent less than predictions based on an annual 1.0 MeV equivalent election fluence of 2.34 x ten to the 13th power square centimeters space environment

  7. Wettability of naturally aged silicone and EPDM composite insulators

    Energy Technology Data Exchange (ETDEWEB)

    Gubanski, S.M. (Royal Inst. of Tech., Stockholm (Sweden)); Vlastos, A.E. (Chalmers Univ. of Tech., Goeteborg (Sweden))

    1990-07-01

    This paper reports the wettability of aged surfaces and of the bulk of naturally aged silicone and EPDM insulator housings and of silicone elastomer insulator coatings studied. The samples were taken either directly from the insulators or treated by exposing them to corona discharges and/or to saline pollution. The results show that the contact angles of the silicone rubber insulator surfaces are larger than the contact angles of the RTV silicone rubber coating and of the EPDM rubber insulator surfaces, especially when the surfaces are aged. When the insulators were exposed to corona discharges, the contact angles of the silicone rubber insulators are reduced but after the exposure they recover with time. The contact angles of the EPDM rubber insulators, however, after the exposure, continue to reduce. When exposed to artificial saline pollution, the silicone rubber insulators show a limited recovery of their contact angles with time, while, when exposed to corona discharge, they show a recovery of the contact angle after the exposure. The time for recovery is dependent on the exposure time to the corona discharges.

  8. Heat Lamps Solder Solar Array Quickly

    Science.gov (United States)

    Coyle, P. J.; Crouthamel, M. S.

    1982-01-01

    Interconnection tabs in a nine-solar-cell array have been soldered simultaneously with radiant heat. Cells and tabs are held in position for soldering by sandwiching them between compliant silicone-rubber vacuum platen and transparent polyimide sealing membrane. Heat lamps warm cells, producing smooth, flat solder joints of high quality.

  9. A gamma-ray detector array for joint spectroscopy experiments at the JAERI tandem-booster facility

    CERN Document Server

    Furuno, K; Komatsubara, T; Furutaka, K; Hayakawa, T; Kidera, M; Hatsukawa, Y; Matsuda, M; Mitarai, S; Shizuma, T; Saitoh, T R; Hashimoto, N; Kusakari, H; Sugawara, M; Morikawa, T

    1999-01-01

    A compact array for gamma-ray spectroscopy developed for the joint experiment at the Japan Atomic Energy Research Institute is described. It consists of an array of 11 Compton suppressed Ge detectors, a 4 pi silicon detector array for charged particle measurements, a position-sensitive silicon detector for experiments on Coulomb excitation and a conversion-electron spectrometer. The details of the detectors and new experimental results obtained with the compact array are also described.

  10. Angles as probabilities

    CERN Document Server

    Feldman, David V

    2008-01-01

    We use a probabilistic interpretation of solid angles to generalize the well-known fact that the inner angles of a triangle sum to 180 degrees. For the 3-dimensional case, we show that the sum of the solid inner vertex angles of a tetrahedron T, divided by 2*pi, gives the probability that an orthogonal projection of T onto a random 2-plane is a triangle. More generally, it is shown that the sum of the (solid) inner vertex angles of an n-simplex S, normalized by the area of the unit (n-1)-hemisphere, gives the probability that an orthogonal projection of S onto a random hyperplane is an (n-1)-simplex. Applications to more general polytopes are treated briefly, as is the related Perles-Shephard proof of the classical Gram-Euler relations.

  11. Phase angle measurement techniques

    Energy Technology Data Exchange (ETDEWEB)

    Madge, R.; Fischer, D.

    1996-01-01

    Real-time measure of the power transfer across a transmission line was discussed. Phase angle measurement techniques, algorithms and applications relevant to power utilities were assessed. Phase-based applications compute the voltage angle difference between two stations, thereby allowing for power transfer calculations and power system control applications. A list of phase angle measurement applications was provided. It includes frequency measurement, state estimation, adaptive relaying, power system control, system restoration, real power flow monitoring and stability assessment, reactive power requirements monitoring, HVDC modulation, subsynchronous resonance, sequence of event recording, and loss reduction and fault location. The optimum timing requirement was determined for each application. Among the timing systems available today, the Global Positioning System (GPS), supported by powerful computers and other custom hardware, is the only tool that can provide the accuracy and coverage needed by today`s power system applications. Commercially available equipment for phase angle measurements was also reviewed. 30 refs., 32 tabs., 5 figs.

  12. Development of a Multi-channel Front-end Electronics Module based on ASIC for Silicon Strip Array Detectors%基于ASIC芯片的硅微条阵列探测器多通道前端电子学模块设计

    Institute of Scientific and Technical Information of China (English)

    赵兴文; 苏弘; 千奕; 孔洁; 章学恒; 闫铎; 李占奎; 李海霞

    2014-01-01

    描述了为兰州重离子加速器冷却储存环(HIRFL-CSR)外靶实验系统硅微条阵列探测器而设计的前端电子学模块。该模块采用专用ASIC芯片,可以处理96路能量信号。对前端电子学模块的性能进行了测试,结果表明,该模块在0.1∼0.7 V范围内的积分非线性好于0.3%;其电子学分辨好于0.45%,最大串扰小于10%;通道一致性测试结果好于1.3%;在室温下连续工作24 h后,零点峰位最大漂移为1.48 mV。%The silicon strip array detector is one of external target facility subsystems in the Cooling Storage Ring on the Heavy Ion Research Facility at Lanzhou (HIRFL-CSR). Using the ASICs, the front-end electronics module has been developed for the silicon strip array detectors and can implement measurement of energy of 96 channels. The performance of the front-end electronics module has been tested. The energy linearity of the front-end electronics module is better than 0.3% for the dynamic range of 0.1∼0.7 V. The energy resolution is better than 0.45%. The maximum channel crosstalk is better than 10%. The channel consistency is better than 1.3%. After continuously working for 24 h at room temperature, the maximum drift of the zero-peak is 1.48 mV.

  13. Silicon-on-ceramic solar cell development. Solar cell development for the cell development task of the Low-Cost Solar Array Project. Quarterly report No. 1, February 15--June 30, 1978

    Energy Technology Data Exchange (ETDEWEB)

    Chapman, P W; Grung, B L; Zook, J D

    1978-07-30

    The objective of this program is to investigate unique cell processing/design approaches to the successful fabrication of high-performance solar cells on silicon-on-ceramic (SOC) material. The work in the cell development area consists of two broad categories of activities: (1) the development of standard cell processing techniques, and (2) the investigation of novel device design approaches. The first area of activity has to do with the development of processing techniques for use with silicon dipped on ''slotted'' ceramic substrates. This embodiment allows us to make contact to the back surface of the silicon, thereby minimizing the front surface contact area. The second activity area is initially concerned with producing a ''stripe'' geometry cell on an unslotted ceramic substrate. The idea here is to expose the base layer for electrical contact on the top surface of the substrate and make up for the lost cell area by using an optical collector. Progress is reported.

  14. Plasmonic and silicon spherical nanoparticle antireflective coatings.

    Science.gov (United States)

    Baryshnikova, K V; Petrov, M I; Babicheva, V E; Belov, P A

    2016-01-01

    Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes. PMID:26926602

  15. Developing barbed microtip-based electrode arrays for biopotential measurement.

    Science.gov (United States)

    Hsu, Li-Sheng; Tung, Shu-Wei; Kuo, Che-Hsi; Yang, Yao-Joe

    2014-07-10

    This study involved fabricating barbed microtip-based electrode arrays by using silicon wet etching. KOH anisotropic wet etching was employed to form a standard pyramidal microtip array and HF/HNO3 isotropic etching was used to fabricate barbs on these microtips. To improve the electrical conductance between the tip array on the front side of the wafer and the electrical contact on the back side, a through-silicon via was created during the wet etching process. The experimental results show that the forces required to detach the barbed microtip arrays from human skin, a polydimethylsiloxane (PDMS) polymer, and a polyvinylchloride (PVC) film were larger compared with those required to detach microtip arrays that lacked barbs. The impedances of the skin-electrode interface were measured and the performance levels of the proposed dry electrode were characterized. Electrode prototypes that employed the proposed tip arrays were implemented. Electroencephalogram (EEG) and electrocardiography (ECG) recordings using these electrode prototypes were also demonstrated.

  16. Nanopillar Arrays on Semiconductor Membranes as Electron Emission Amplifiers

    OpenAIRE

    Qin, Hua; Kim, Hyun-Seok; Blick, Robert H.

    2007-01-01

    A new transmission-type electron multiplier was fabricated from silicon-on-insulator (SOI) material by integrating an array of one dimensional (1D) silicon nanopillars onto a two dimensional (2D) silicon membrane. Primary electrons are injected into the nanopillar-membrane system from the flat surface of the membrane, while electron emission from the other side is probed by an anode. The secondary electron yield (SEY) from nanopillars is found to be about 1.8 times that of plane silicon membr...

  17. Crosstalk Reduction for Superconducting Microwave Resonator Arrays

    CERN Document Server

    Noroozian, Omid; Eom, Byeong Ho; Leduc, Henry G; Zmuidzinas, Jonas; 10.1109/TMTT.2012.2187538

    2012-01-01

    Large-scale arrays of Microwave Kinetic Inductance Detectors (MKIDs) are attractive candidates for use in imaging instruments for next generation submillimeter-wave telescopes such as CCAT. We have designed and fabricated tightly packed ~250-pixel MKID arrays using lumped-element resonators etched from a thin layer of superconducting TiNx deposited on a silicon substrate. The high pixel packing density in our initial design resulted in large microwave crosstalk due to electromagnetic coupling between the resonators. Our second design eliminates this problem by adding a grounding shield and using a double-wound geometry for the meander inductor to allow conductors with opposite polarity to be in close proximity. In addition, the resonator frequencies are distributed in a checkerboard pattern across the array. We present details for the two resonator and array designs and describe a circuit model for the full array that predicts the distribution of resonator frequencies and the crosstalk level. We also show res...

  18. Cell adhesion behavior on the silicone rubber surface modified by using ion beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, In Tae; Jung, Chan Hee; Nh, Young Chang; Choi, Jae Hak [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of); Kuk, In Seol [Hanyang University, Seoul (Korea, Republic of); An, Mi Young [Chungnam National University, Daejeon (Korea, Republic of)

    2009-12-15

    In this study we studied cell adhesion and proliferation on the surface of a silicone rubber modified by ion beam irradiation. The surface property of the irradiated silicone rubber was characterized by water contact angle and FT-IR analyses. It was observed that human (HEK293) fibroblast cells exhibit strong adhesion to the irradiated silicone surface. This enhanced adhesion of mammalian cells can be attributed to the increase in the hydrophilicity of the silicone surface by ion beam irradiation.

  19. Surface modified silicon nanochannel for urea sensing

    CERN Document Server

    Chen, Yu; Hong, Mi; Erramilli, Shyamsunder; Mohanty, Pritiraj

    2008-01-01

    Silicon nanowires have been surface functionalized with the enzyme urease for biosensor applications to detect and quantify urea concentration. The device is nanofabricated from a silicon on insulator (SOI) wafer with a top down lithography approach. The differential conductance of silicon nanowires can be tuned for optimum performance using the source drain bias voltage, and is sensitive to urea at low concentration. The experimental results show a linear relationship between surface potential change and urea concentration in the range of 0.1 to 0.68 mM. The sensitivity of our devices shows high reproducibility with time and different measurement conditions. The nanowire urea biosensor offers the possibility of high quality, reusable enzyme sensor array integration with silicon based circuits.

  20. Angle of Arrival Detection with Fifth Order Phase Operators

    CERN Document Server

    Khmou, Youssef

    2015-01-01

    In this paper, a fifth order propagator operators are proposed for estimating the Angles Of Arrival (AOA) of narrowband electromagnetic waves impinging on antenna array when its number of sensors is larger than the number of radiating sources. The array response matrix is partitioned into five linearly dependent phases to construct the noise projector using five different propagators from non diagonal blocks of the spectral matrice of the received data; hence, five different estimators are proposed to estimate the angles of the sources. The simulation results proved the performance of the proposed estimators in the presence of white noise comparatively to high resolution eigen based spectra.

  1. Knife-edge thin film field emission cathodes on (110) silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Lee, B.; Elliott, T.S.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Trost, H.J. (Department of Physics, Texas A M University, College Station, Texas 77843-4242 (United States))

    1994-03-01

    In the effort to develop a high performance field emission cathode for application in microwave amplifiers, it is clear that the emitter structure should have a sharp emitter surface, a large emitter height, a small gate opening size, and a small emitter angle. We have developed a technique that fabricates knife-edge field emission arrays (KEFEA) on (110) silicon wafers. KEFEA has an optimized structure meeting the requirements mentioned above. The emitter edge radius is about 250 A or less, the emitter height is 8 [mu]m, and the gate gap is [similar to]0.2 [mu]m. Experiments have exhibited Fowler--Nordheim type field emission with gate-to-substrate bias voltage less than 50 V.

  2. Study of the crystal structure of silicon nanoislands on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Krivulin, N. O., E-mail: krivulin@phys.unn.ru; Pirogov, A. V.; Pavlov, D. A.; Bobrov, A. I. [Lobachevsky State University of Nizhny Novgorod (Russian Federation)

    2015-02-15

    The results of studies of the crystal structure of silicon nanoislands on sapphire are reported. It is shown that the principal defects in silicon nanoislands on sapphire are twinning defects. As a result of the formation of such defects, different crystallographic orientations are formed in silicon nanoislands on sapphire. In the initial stages of the molecular-beam epitaxy of silicon on sapphire, there are two basic orientations: the (001) orientation parallel to the surface and the (001) orientation at an angle of 70° to the surface.

  3. Photoactivation of silicon quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Lockwood, R., E-mail: rossl@ualberta.c [Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2G7 (Canada); McFarlane, S. [Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2G7 (Canada); Rodriguez Nunez, J.R. [Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada); Wang, X.Y. [Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2G7 (Canada); Veinot, J.G.C. [Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada); Meldrum, A. [Department of Physics, University of Alberta, Edmonton, Alberta, T6G 2G7 (Canada)

    2011-07-15

    We show that free-standing silicon quantum dots (QDs) can be photoactivated by blue or UV optical irradiation. The luminescence intensity increases by an order of magnitude for irradiation times of several minutes under moderate optical power. The cut-off energy for photoactivation is between 2.1 and 2.4 eV, not very different from the activation energy for hydrogen dissociation from bulk silicon surfaces. We propose the mechanism for this effect is associated with silicon-hydride bond breaking and the subsequent oxidation of dangling bonds. This phenomenon could be used to 'write' luminescent quantum dots into pre-determined arrays. - Research highlights: {yields}Laser light causes increased photoluminescence intensity in silicon quantum dots. {yields} The photoactivation process is effective for wavelengths of 514 nm and shorter. {yields} Hydrogen bound to the Si-QDs is replaced by oxygen in a two-step process. {yields} Patterning is possible but limited by physical dispersion of Si-QDs.

  4. Angles in hyperbolic lattices

    DEFF Research Database (Denmark)

    Södergren, Carl Anders; Risager, Morten S.

    2015-01-01

    It is well known that the angles in a lattice acting on hyperbolic n -space become equidistributed. In this paper we determine a formula for the pair correlation density for angles in such hyperbolic lattices. Using this formula we determine, among other things, the asymptotic behavior...... of the density function in both the small and large variable limits. This extends earlier results by Boca, Pasol, Popa and Zaharescu and Kelmer and Kontorovich in dimension 2 to general dimension n . Our proofs use the decay of matrix coefficients together with a number of careful estimates, and lead...

  5. Interferometric Plasmonic Lensing with Nanohole Arrays

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Yu; Joly, Alan G.; El-Khoury, Patrick Z.; Hess, Wayne P.

    2014-12-18

    Nonlinear photoemission electron microscopy (PEEM) of nanohole arrays in gold films maps propagating surface plasmons (PSPs) launched from lithographically patterned structures. Strong near field photoemission patterns are observed in the PEEM images, recorded following low angle of incidence irradiation of nanohole arrays with sub-15 fs laser pulses centered at 780 nm. The recorded photoemission patterns are attributed to constructive and destructive interferences between PSPs launched from the individual nanoholes which comprise the array. By exploiting the wave nature of PSPs, we demonstrate how varying the array geometry (hole diameter, pitch, and number of rows/columns) ultimately yields intense localized photoemission. Through a combination of PEEM and finite-difference time-domain simulations, we identify the optimal array geometry for efficient light coupling and interferometric plasmonic lensing. We show a preliminary application of inteferometric plasmonic lensing by enhancing the photoemission from the vertex of a gold triangle using nanohole array.

  6. Flexible Ultrasonic Phased-Array Probe

    Institute of Scientific and Technical Information of China (English)

    施克仁; 阙开良; 郭大勇

    2004-01-01

    In ultrasonic phased-array testing, most probes are rigid with fixed elements. However, when testing a cambered piece, a rigid probe cannot be used directly, but an ultrasonic chock or coupling media must be used, which adds cost and reduces the accuracy. The objective of this research was to improve the tests of cambered pieces. A flexible ultrasonic phased-array probe was developed to do the flexible phased-array testing. The key technologies in the flexible phased-array probe include the probe design and the phased-array control. A new method was developed to design the flexible probe according to the curvature of the piece and the test depth. The method includes the calculation of the element's height (he), the relative rotation angle ((e), the distance between the adjoining elements (de), and the element's effective testing range. A flexible ultrasonic phased-array probe has been developed using this method.

  7. Anisotropic permeability in deterministic lateral displacement arrays

    CERN Document Server

    Vernekar, Rohan; Loutherback, Kevin; Morton, Keith; Inglis, David

    2016-01-01

    We investigate anisotropic permeability of microfluidic deterministic lateral displacement (DLD) arrays. A DLD array can achieve high-resolution bimodal size-based separation of micro-particles, including bioparticles such as cells. Correct operation requires that the fluid flow remains at a fixed angle with respect to the periodic obstacle array. We show via experiments and lattice-Boltzmann simulations that subtle array design features cause anisotropic permeability. The anisotropy, which indicates the array's intrinsic tendency to induce an undesired lateral pressure gradient, can lead to off-axis flows and therefore local changes in the critical separation size. Thus, particle trajectories can become unpredictable and the device useless for the desired separation duty. We show that for circular posts the rotated-square layout, unlike the parallelogram layout, does not suffer from anisotropy and is the preferred geometry. Furthermore, anisotropy becomes severe for arrays with unequal axial and lateral gaps...

  8. Development of a MEMS electrostatic condenser lens array for nc-Si surface electron emitters of the Massive Parallel Electron Beam Direct-Write system

    Science.gov (United States)

    Kojima, A.; Ikegami, N.; Yoshida, T.; Miyaguchi, H.; Muroyama, M.; Yoshida, S.; Totsu, K.; Koshida, N.; Esashi, M.

    2016-03-01

    Developments of a Micro Electro-Mechanical System (MEMS) electrostatic Condenser Lens Array (CLA) for a Massively Parallel Electron Beam Direct Write (MPEBDW) lithography system are described. The CLA converges parallel electron beams for fine patterning. The structure of the CLA was designed on a basis of analysis by a finite element method (FEM) simulation. The lens was fabricated with precise machining and assembled with a nanocrystalline silicon (nc-Si) electron emitter array as an electron source of MPEBDW. The nc-Si electron emitter has the advantage that a vertical-emitted surface electron beam can be obtained without any extractor electrodes. FEM simulation of electron optics characteristics showed that the size of the electron beam emitted from the electron emitter was reduced to 15% by a radial direction, and the divergence angle is reduced to 1/18.

  9. Collimation: a silicon solution

    CERN Multimedia

    2007-01-01

    Silicon crystals could be used very efficiently to deflect high-energy beams. Testing at CERN has produced conclusive results, which could pave the way for a new generation of collimators. The set of five crystals used to test the reflection of the beams. The crystals are 0.75 mm wide and their alignment is adjusted with extreme precision. This figure shows the deflection of a beam by channelling and by reflection in the block of five crystals. Depending on the orientation of the crystals: 1) The beam passes without "seeing" the crystals and is not deflected 2) The beam is deflected by channelling (with an angle of around 100 μrad) 3) The beam is reflected (with an angle of around 50 μrad). The intensity of the deflected beam is illustrated by the intensity of the spot. The spot of the reflected beam is clearly more intense than that one of the channelled beam, demonstrating the efficiency of t...

  10. Comparison of the performance of cop-coated and pt-coated radial junction n+p-silicon microwire-array photocathodes for the sunlight-driven reduction of water to H2(g)

    DEFF Research Database (Denmark)

    Roske, Christopher W.; Popczun, Eric J.; Seger, Brian;

    2015-01-01

    The electrocatalytic performance for hydrogen evolution has been evaluated for radial-junction n+p-Si microwire (MW) arrays with Pt or cobalt phosphide, CoP, nanoparticulate catalysts in contact with 0.50 M H2SO4(aq). The CoP-coated (2.0 mg cm-2) n+p-Si MW photocathodes were stable for over 12 h ...

  11. The quadriceps angle

    DEFF Research Database (Denmark)

    Miles, James Edward; Frederiksen, Jane V.; Jensen, Bente Rona;

    2012-01-01

    : Pelvic limbs from red foxes (Vulpes vulpes). METHODS: Q angles were measured on hip dysplasia (HD) and whole limb (WL) view radiographs of each limb between the acetabular rim, mid-point (Q1: patellar center, Q2: femoral trochlea), and tibial tuberosity. Errors of 0.5-2.0 mm at measurement landmarks...

  12. Phased array antenna matching: Simulation and optimization of a planar phased array of circular waveguide elements

    Science.gov (United States)

    Dudgeon, J. E.

    1972-01-01

    A computerized simulation of a planar phased array of circular waveguide elements is reported using mutual coupling and wide angle impedance matching in phased arrays. Special emphasis is given to circular polarization. The aforementioned computer program has as variable inputs: frequency, polarization, grid geometry, element size, dielectric waveguide fill, dielectric plugs in the waveguide for impedance matching, and dielectric sheets covering the array surface for the purpose of wide angle impedance matching. Parameter combinations are found which produce reflection peaks interior to grating lobes, while dielectric cover sheets are successfully employed to extend the usable scan range of a phased array. The most exciting results came from the application of computer aided optimization techniques to the design of this type of array.

  13. Asymmetric liquid wetting and spreading on surfaces with slanted micro-pillar arrays

    KAUST Repository

    Yang, Xiaoming

    2013-01-01

    Uni-directional liquid spreading on asymmetric silicone-fabricated nanostructured surfaces has recently been reported. In this work, uniformly deflected polydimethylsiloxane (PDMS) micro-pillars covered with silver films were fabricated. Asymmetric liquid wetting and spreading behaviors in a preferential direction were observed on the slanted micro-pillar surfaces and a micro-scale thin liquid film advancing ahead of the bulk liquid droplet was clearly observed by high-speed video imaging. It is found that the slanted micro-pillar array is able to promote or inhibit the propagation of this thin liquid film in different directions by the asymmetric capillary force. The spreading behavior of the bulk liquid was guided and finally controlled by this micro-scale liquid film. Different spreading regimes are defined by the relationship between the liquid intrinsic contact angle and the critical angles, which were determined by the pillar height, pillar deflection angle and inter-pillar spacing. © The Royal Society of Chemistry 2013.

  14. A U.S. view of silicon production processes

    Science.gov (United States)

    Lutwack, R.

    1981-01-01

    One of the objectives of the Low-Cost Solar Array Project is the demonstration of the practicality of processes for producing silicon, suitable for fabricating solar cells for terrestrial applications, at prices less than $14/kg. Approaches being investigated are related to a metallurgical silicon/silane/silicon process, a metallurgical silicon/dichlorosilane/Siemens-type process, and a silicon tetrachloride-zinc reduction process. There is a great probability that the first process will yield semiconductor grade Si at a price less than $14/kg. The second process appears to be capable of providing polysilicon with a purity equivalent to the present commercial semiconductor grade silicon at a price of about $20/kg. An important part of the program is the investigation of the effects of impurities on the performance of solar cells.

  15. Pused CO2 laser driven production of ultrafine Silicon, Silicon carbide, Silicon nitrides oxynitride powders

    International Nuclear Information System (INIS)

    Ultrafine Si, Si3N4, SiC and silicon oxynitride powders have been produced by irradiating gas-phase reactants by means of a CO2 laser. The mechanism of SiH4 CO2 laser induced absorption and dissociation is discussed on the basis of the results of the spectral and time resolved measurement of fragment chemiluminescence. The role played by the SiH2 radical in the powder formation is investigated. The quality of Si, Si3N4, SiC and silicon oxynitride powders is checked by means of several off-line diagnostics (IR spectroscopy, X-Ray diffraction at wide and small angle, BET analysis). The possibility of controlling powder stoichiometry and doping from the gas-phase reactant concetration is discussed

  16. High-density optical interconnects by using silicon photonics

    Science.gov (United States)

    Urino, Yutaka; Usuki, Tatsuya; Fujikata, Junichi; Ishizaka, Masashige; Yamada, Koji; Horikawa, Tsuyoshi; Nakamura, Takahiro; Arakawa, Yasuhiko

    2014-02-01

    One of the most serious challenges facing the exponential performance growth in the information industry is a bandwidth bottleneck in inter-chip interconnects. Optical interconnects with silicon photonics have been expected to solve the problem because of the intrinsic properties of optical signals and the industrial advantages of silicon for use in the electronics industry. We therefore propose an optical interconnect system by using silicon photonics to solve the problem. We examined integration between photonics and electronics and integration between light sources and silicon substrates, and we propose a photonics-electronics convergence system based on these examinations. We also investigated the configurations and characteristics of optical components for the system, including silicon spot-size converters, silicon optical waveguides, silicon optical splitters, silicon optical modulators, germanium photodetectors, and arrayed laser diodes. We then demonstrated the feasibility of the system by fabricating a high-density silicon optical interposer by using silicon photonics hybridly integrated with arrayed laser diodes and monolithically integrated with the other optical components on a single silicon substrate. The pad pitches of optical modulators and photodetectors were designed to be 100 μm so that LSI bare chips were able to contact to them electrically by flip-chip bonding. Since this system was optically complete and closed and no temperature sensitive component was used, we did not need to align the fibers, control the polarization, or control the temperature throughout the experiments. As a result, we achieved errorfree data links at 20 Gbps and high bandwidth density of 30 Tbps/cm2 with the silicon optical interposer.

  17. Characterization of Silicon Moth-Eye Antireflection Coatings for Astronomical Applications in the Infrared

    Science.gov (United States)

    Jeram, Sarik; Ge, Jian; Jiang, Peng; Phillips, Blayne

    2016-01-01

    Silicon moth-eye antireflective structures have emerged to be an excellent approachfor reducing the amount of light that is lost upon incidence on a given surface of optics made of silicon. This property has been exploited for a wide variety of products ranging from eyeglasses and flat-panel displays to solar panels. These materials typically come in the form of coatings that are applied to an optical substrate such as glass. Moth-eye coatings, made of a periodic array of subwavelength pillars on silicon substrates or other substrates, can produce the desired antireflection (AR) performance for a broad wavelength range and over a wide range of incident angles. In the field of astronomy, every photon striking a detector is significant - and thus, losses from reflectivity at the various optical interfaces before a detector can have significant implications to the science at hand. Moth-eye AR coatings on these optical interfaces may minimize their reflection losses while maximizing light throughput for a multitude of different astronomical instruments. In addition, moth-eye AR coatings, which are patterned directly on silicon surfaces, can significantly enhance the coating durability. At the University of Florida, we tested two moth-eye filters designed for use in the near-infrared regime at 1-8 microns by examining their optical properties, such as transmission, the scattered light, and wavefront quality, and testing the coatings at cryogenic temperatures to characterize their viability for use in both ground- and space-based infrared instruments. This presentation will report our lab evaluation results.

  18. Silicone chain extender

    DEFF Research Database (Denmark)

    2015-01-01

    The present invention relates to a silicone chain extender, more particularly a chain extender for silicone polymers and copolymers, to a chain extended silicone polymer or copolymer and to a functionalized chain extended silicone polymer or copolymer, to a method for the preparation thereof and...

  19. Investigation of irradiance efficiency for LED phototherapy with different arrays

    Science.gov (United States)

    Chen, Hsi-Chao; Wu, Guo-Yang

    2010-12-01

    Red and yellow light emitting diodes (LEDs) are currently utilized as lighting sources during LED phototherapy. These LEDs were arranged on a disk with an external diameter of 70 mm with different arrays — radial, rhombus, square radial, and square rhombus arrays. The radial and square radial arrays had better irradiance efficiency than rhombus and square rhombus arrays by optical simulation. Additionally, the radial array had 76 sets of LEDs, but the square radial array had 100 sets. Thus, a mockup sample of radial array phototherapy was constructed for performance tests. The mixture efficiency of the radial array was observed at distances of 1-100 mm and lighting was well mixed when distance exceeded 50 mm by optical simulation. Irradiance variation with angle was approximated by experiment and theory at a treatment distance of 50 mm and 100 mm using the phototherapy mockup. The radial array was one good choice for LED phototherapy.

  20. Lithium diffusion in silicon and induced structure disorder: A molecular dynamics study

    Directory of Open Access Journals (Sweden)

    Huanyu Wang

    2013-11-01

    Full Text Available Using molecular dynamics method, we investigate the diffusion property of lithium in different silicon structures and silicon structure's disorder extent during lithium's diffusion process. We find that the pathway and the incident angle between the direction of barrier and diffusion of lithium are also the essential factors to the lithium's diffusion property in silicon anode besides the barrier. Smaller incident angle could decrease the scattering of lithium in silicon structure effectively. Moreover, lithium diffuses easier in the Li-Si alloy structure of higher lithium concentration with deeper injection depth. The silicon's structure will be damaged gradually during the charge and discharge process. However, it will also recover to initial state to a great extent after relaxation. Therefore, the damage of lithium diffusion to silicon anode in the structure of low lithium concentration is reversible to a great degree. In addition, the silicon structure of crystal orientation perform better properties in both lithium's diffusivity and structural stability.

  1. The lateral angle revisited

    DEFF Research Database (Denmark)

    Morgan, Jeannie; Lynnerup, Niels; Hoppa, R.D.

    2013-01-01

    measurements taken from computed tomography (CT) scans. Previous reports have observed that the lateral angle size in females is significantly larger than in males. The method was applied to an independent series of 77 postmortem CT scans (42 males, 35 females) to validate its accuracy and reliability...... method appears to be of minimal practical use in forensic anthropology and archeology. © 2013 American Academy of Forensic Sciences....

  2. Why are angles misperceived?

    OpenAIRE

    Nundy, Surajit; Lotto, Beau; Coppola, David; Shimpi, Amita; Purves, Dale

    2000-01-01

    Although it has long been apparent that observers tend to overestimate the magnitude of acute angles and underestimate obtuse ones, there is no consensus about why such distortions are seen. Geometrical modeling combined with psychophysical testing of human subjects indicates that these misperceptions are the result of an empirical strategy that resolves the inherent ambiguity of angular stimuli by generating percepts of the past significance of the stimulus rather than the geometry of its re...

  3. Controllable fabrication of periodic arrays of high-aspect-ratio micro-nano hierarchical structures and their superhydrophobicity

    International Nuclear Information System (INIS)

    This paper demonstrates a flexible and controllable fabrication of vertically aligned and high-aspect-ratio (HAR) micro-nano hierarchical structures using conventional micro-technologies. We first masked the nanopatterns on a photoresist mold by shifting the same photomask, which could be performed using conventional contact microlithography. Thereby replicating nanopatterns onto an aluminium mold and successfully fabricating silicon nanopillar arrays about 300 nm in diameter and 5 µm in height via the deep reactive etching (DRIE) process. We also fabricated micro-nano hierarchical structures with variable aspect ratios using the proposed nanopattern technology and DRIE process without using any special nanopatterning equipment or techniques. The proposed method not only simplified the fabrication process but also produced HAR (higher than 15) structures. We also investigate the replica molding steps from the fabricated silicon stamp to a UV-curable polymer replica using a PDMS mold and conventional nano-imprinting, where each nanopillar diameter was 320 nm with 95% fidelity. As a result, the hierarchical structure arrays show stable superhydrophobic surface properties with a contact angle of approximately 160°. Owing to the cost efficiency of mass production and the fidelity of the strategy, the methodology could provide a general approach for fabricating complex three-dimensional periodic hierarchical structures onto a single chip and can be applied to various fields of multifunctional applications. (paper)

  4. Al纳米颗粒增强微晶硅薄膜太阳电池光吸收的模拟研究∗%Numerical simulation of light absorption enhancement in micro crystalline silicon solar cells with Al nanoparticle arrays

    Institute of Scientific and Technical Information of China (English)

    丁东; 杨仕娥; 陈永生; 郜小勇; 谷锦华; 卢景霄

    2015-01-01

    利用价格低廉、性能优良的金属纳米颗粒增强太阳电池的光吸收具有广阔的应用前景。通过建立三维数值模型,模拟了微晶硅薄膜电池前表面周期性分布的Al纳米颗粒阵列对电池光吸收的影响,并对其结构参数进行了优化。模拟结果表明:对于球状Al纳米颗粒阵列,影响电池光吸收的关键参数是周期P与半径R的比值,或者说是颗粒的表面覆盖度;当P/R=4—5时,总的光吸收较参考电池提高可达20%。与球状颗粒相比,优化后的半球状Al纳米颗粒阵列可获得更好的陷光效果,但后者对颗粒半径R的变化较敏感。另外,结合电场分布,对电池光吸收增强的物理机理进行了分析。%Metal nanoparticles with low cost and high performance have good potential applications in light-trapping of solar cells. In this paper, a three-dimensional model is proposed to simulate the light absorption of microcrystalline silicon (µc-Si:H) thin film solar cells. The effects of spherical and hemispherical Al nanoparticle arrays located on the front surfaces of solar cells are investigated, and the particle radius and array period are optimized by the finite element method. The results show that the optimal Al nanoparticle arrays can enhance broadband absorption in thin film solar cells. For spherical particle arrays, the key parameter that influences light absorption in solar cells is period/radius ratio (P/R) or particle surface coverage. When P/R = 4–5, the optimum integrated absorption enhancement (Eabs) is over 20%under AM1.5 illumination compared with the solar cell without nanoparticles. The value of Eabs is small and decreases with the increase of P/R when P/R>5, and Eabs is less than zero when P/R<3 because of the parasitic absorption and backward scattering from the mental nanoparticles. When P =500 nm and R=120 nm, the spectral absorption rate as a function of wavelength shows broadband absorption including

  5. A monolithic bolometer array suitable for FIRST

    Science.gov (United States)

    Bock, J. J.; LeDuc, H. G.; Lange, A. E.; Zmuidzinas, J.

    1997-01-01

    The development of arrays of infrared bolometers that are suitable for use in the Far Infrared and Submillimeter Telescope (FIRST) mission is reported. The array architecture is based on the silicon nitride micromesh bolometer currently baselined for use in the case of the Planck mission. This architecture allows each pixel to be efficiently coupled to one or both polarizations and to one or more spatial models of radiation. Micromesh structures are currently being developed, coupled with transistor-edge sensors and read out by a SQUID amplifier. If these devices are successful, then the relatively large cooling power available at 300 mK may enable a SQUID-based multiplexer to be integrated on the same wafer as the array, creating a monolithic, fully multiplexed, 2D array with relatively few connections to the sub-Kelvin stage.

  6. Piezoresistive Foam Sensor Arrays for Marine Applications

    CERN Document Server

    Dusek, Jeff E; Lang, Jeffrey H

    2016-01-01

    Spatially-dense pressure measurements are needed on curved surfaces in marine environments to provide marine vehicles with the detailed, real-time measurements of the near-field flow necessary to improve performance through flow control. To address this challenge, a waterproof and conformal pressure sensor array comprising carbon black-doped-silicone closed-cell foam (CBPDMS foam) was developed for use in marine applications. The response of the CBPDMS foam sensor arrays was characterized using periodic hydrodynamic pressure stimuli from vertical plunging, from which a piecewise polynomial calibration was developed to describe the sensor response. Inspired by the distributed pressure and velocity sensing capabilities of the fish lateral line, the CBPDMS foam sensor arrays have significant advantages over existing commercial sensors for distributed flow reconstruction and control. Experimental results have shown the sensor arrays to have sensitivity on the order of 5 Pascal, dynamic range of 50-500 Pascal; are...

  7. Atomistic structural change of silicon surface under a nanoparticle collision

    Institute of Scientific and Technical Information of China (English)

    DUAN Fangli; LUO Jianbin; WEN Shizhu; WANG Jiaxu

    2005-01-01

    This study investigates the effect of the incident angle on the trajectory of a nanoparticle and the damaged region on a silicon surface, by molecular dynamic simulation of the collision and recoil of a nanoparticle with a monocrystlline silicon surface. With the change of the incident angle, the recoil angle of the particle changes in a large range from an obtuse angle to an acute angle. The incident angle determines which part of the particle is in contact with the surface when the particle penetrates into the deepest position. Furthermore, it is the contacting part of the particle that the released elastic deformation energy of the surface acts on. These lead to the phenomenon that the recoil angle is sensitive to the incident angle in the collision process at a nanoscale. A depressed region is formed on the surface after the collision. The shape of the damaged region changes from a deep scoop to a flat arc, which is consistent with the trajectory of the particle. Some silicon atoms on the surface are extruded out by the incident particle, and form a pileup at the rim of the depressed region.

  8. Cerebellopontine angle Hodgkin's disease

    International Nuclear Information System (INIS)

    Intracranial Hodgkin's disease is a rare site of involvement, and even more rare is its presentation as a cerebellopontine angle mass. It can be difficult to diagnose especially when recurrent tumors occur because both CT and lumbar puncture have been shown to have a relatively low yield. Gadolinium-enhanced MRI is more sensitive. It is concluded that while the imaging findings can be non-specific, the rapid response to therapy (steroids) may provide a clue to diagnosis. Copyright (1999) Blackwell Science Pty Ltd

  9. Critical angle laser refractometer

    International Nuclear Information System (INIS)

    A simple laser refractometer based on the detection of the critical angle for liquids is presented. The calibrated refractometer presents up to 0.000 11 of uncertainty when the refractive index is in the range between 1.300 00 and 1.340 00. The experimental setup is easy to construct and the material needed is available at most optics laboratories. The calibration method is simple and can be used in other devices. The refractive index measurements in aqueous solutions of sodium chloride were carried out to test the device and a linear dependence between the refractive index and the salt concentration was found

  10. Silicon spintronics: Progress and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Sverdlov, Viktor; Selberherr, Siegfried, E-mail: Selberherr@TUWien.ac.at

    2015-07-14

    Electron spin attracts much attention as an alternative to the electron charge degree of freedom for low-power reprogrammable logic and non-volatile memory applications. Silicon appears to be the perfect material for spin-driven applications. Recent progress and challenges regarding spin-based devices are reviewed. An order of magnitude enhancement of the electron spin lifetime in silicon thin films by shear strain is predicted and its impact on spin transport in SpinFETs is discussed. A relatively weak coupling between spin and effective electric field in silicon allows magnetoresistance modulation at room temperature, however, for long channel lengths. Due to tunneling magnetoresistance and spin transfer torque effects, a much stronger coupling between the spin (magnetization) orientation and charge current is achieved in magnetic tunnel junctions. Magnetic random access memory (MRAM) built on magnetic tunnel junctions is CMOS compatible and possesses all properties needed for future universal memory. Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized.

  11. Improving silicon probe performance through layer-by-layer coating

    OpenAIRE

    Coelho, Nuno Miguel Teixeira

    2015-01-01

    Fully comprehending brain function, as the scale of neural networks, will only be possi-ble with the development of tools by micro and nanofabrication. Regarding specifically silicon microelectrodes arrays, a significant improvement in long-term performance of these implants is essential. This project aims to create a silicon microelectrode coating that provides high-quality electrical recordings, while limiting the inflammatory response of chronic implants. To this purpose, a combined chi...

  12. Miniature electron beam column with a silicon micro field emitter

    International Nuclear Information System (INIS)

    Silicon micro field emitters (Si-MFEs) are expected to be promising as electron sources for their high brightness and ease in making arrayed microcolumns due to small physical size. We have developed a Si-MFE electron gun assembly that produces an electron beam of 1 keV. All components including the Si acceleration electrode are mounted on an integrated circuit (IC) package stem (TO-8) by anodic and eutectic bonding. A high brightness (75 μA/sr) and a long lifetime (>1000 h) have been observed. To overcome the intrinsic emission instability of Si-MFEs, we developed a simple feedback circuit which controls an extraction voltage. The source position shift and the aberration coefficient change caused by stabilization were evaluated analytically and found to be negligible due to the scaling law as applied to micron size. We confirmed that the total emission fluctuation could be stabilized to less than 1% by detecting the absorption current but also found that this detection should be done in the electron beam column to stabilize the probe current due to the instability of the emission angle. Using the Si-MFE electron gun along with a miniature electron beam column 5 cm in length, we evaluated the electron optical properties and succeeded in demonstrating a scanning electron microscope operation with a resolution less than 0.5 μm. copyright 1997 American Vacuum Society

  13. Variable angle correlation spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Y K [Univ. of California, Berkeley, CA (United States)

    1994-05-01

    In this dissertation, a novel nuclear magnetic resonance (NMR) technique, variable angle correlation spectroscopy (VACSY) is described and demonstrated with {sup 13}C nuclei in rapidly rotating samples. These experiments focus on one of the basic problems in solid state NMR: how to extract the wealth of information contained in the anisotropic component of the NMR signal while still maintaining spectral resolution. Analysis of the anisotropic spectral patterns from poly-crystalline systems reveal information concerning molecular structure and dynamics, yet in all but the simplest of systems, the overlap of spectral patterns from chemically distinct sites renders the spectral analysis difficult if not impossible. One solution to this problem is to perform multi-dimensional experiments where the high-resolution, isotropic spectrum in one dimension is correlated with the anisotropic spectral patterns in the other dimensions. The VACSY technique incorporates the angle between the spinner axis and the static magnetic field as an experimental parameter that may be incremented during the course of the experiment to help correlate the isotropic and anisotropic components of the spectrum. The two-dimensional version of the VACSY experiments is used to extract the chemical shift anisotropy tensor values from multi-site organic molecules, study molecular dynamics in the intermediate time regime, and to examine the ordering properties of partially oriented samples. The VACSY technique is then extended to three-dimensional experiments to study slow molecular reorientations in a multi-site polymer system.

  14. Angle-resolved cathodoluminescence imaging polarimetry

    CERN Document Server

    Osorio, Clara I; Brenny, Benjamin; Polman, Albert; Koenderink, A Femius

    2015-01-01

    Cathodoluminescence spectroscopy (CL) allows characterizing light emission in bulk and nanostructured materials and is a key tool in fields ranging from materials science to nanophotonics. Previously, CL measurements focused on the spectral content and angular distribution of emission, while the polarization was not fully determined. Here we demonstrate a technique to access the full polarization state of the cathodoluminescence emission, that is the Stokes parameters as a function of the emission angle. Using this technique, we measure the emission of metallic bullseye nanostructures and show that the handedness of the structure as well as nanoscale changes in excitation position induce large changes in polarization ellipticity and helicity. Furthermore, by exploiting the ability of polarimetry to distinguish polarized from unpolarized light, we quantify the contributions of different types of coherent and incoherent radiation to the emission of a gold surface, silicon and gallium arsenide bulk semiconductor...

  15. Improving The Performance Of 3-D Sensor Array By Rotation

    Directory of Open Access Journals (Sweden)

    Ayesha Naaz

    2012-04-01

    Full Text Available In this paper, a method is proposed to improve the performance of 3-D array for DOA estimation. Cancellation of ground clutter received at the array (of sensors is an important problem to be considered. The approach being addressed to reduced the clutter is based on rotating the 3-D array (a cubical array by a fixed angle in all the three directions simultaneously. The computer simulations carried out showed that this method was capable of resolving closely spaced sources and also yielded optimum performance in achieving direction of arrivals. Compared to normal cubical array with the same number of elements, the rotated array provides a significant DOA accuracy. Further simulations were also carried out for various angles of rotation.

  16. Black luminescent silicon

    Energy Technology Data Exchange (ETDEWEB)

    Pezoldt, Joerg [FG Nanotechnologie, Institut fuer Mikro- und Nanotechnologie, TU Ilmenau, Postfach 100565, 98684 Ilmenau (Germany); Kups, Thomas [FG Werkstoffe der Elektrotechnik, Institut fuer Mikro- und Nanotechnologien, TU Ilmenau, Postfach 1005765, 98684 Ilmenau (Germany); Stubenrauch, Mike [FG Mikromechanische Systeme, Institut fuer Mikro- und Nanotechnologien, TU Ilmenau, Postfach 1005765, 98684 Ilmenau (Germany); Fischer, Michael [FG Elektroniktechnologie, Institut fuer Mikro- und Nanotechnologien, TU Ilmenau, Postfach 1005765, 98684 Ilmenau (Germany)

    2011-03-15

    Black silicon is a fascinating multipurpose modification of bulk silicon which can be fabricated in a selforganized structure formation process during dry etching of bare silicon wafer leading to the formation of a high density of silicon needles. The smallest dimension of the tips approaches values between 1 and 2 nm. The silicon nanostructure exhibits an extremely low diffuse reflectivity. The nanosized tips and their coating with fluorine doped nonstoichiometric silicon dioxide are responsible for cathodoluminescence in the blue-green and red regions of the visible spectra (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Carey, JE; Mazur, E

    2005-05-19

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  18. Thickness effect on field electron emission of silicon emitter arrays coated with sol-gel Ba0.65Sr0.35TiO3 and (Ba0.65Sr0.35)0.75La0.25TiO3 thin films

    International Nuclear Information System (INIS)

    Ba0.65Sr0.35TiO3 (BST) and (Ba0.65Sr0.35)0.75La0.25TiO3 (BSLT) thin films with different thicknesses have been deposited onto silicon field emitter arrays (FEAs) using sol-gel technology for field electron emission applications. The BST-coated Si FEAs demonstrate an enhancement of electron emission, but the threshold field is BST film thickness dependence. The study reveals that the film thickness dependence of electron emission is due to the various microstructural features developed in BST films with different thicknesses. The crystallinity in perovskite films is improved with the increasing film thickness. The 15-nm-thick BST film is amorphous in nature, and then the polycrystalline perovskite grains are formed on the top of the amorphous layer in the thicker film. BSLT-coated Si FEAs also exhibit similar thickness-dependent field emission enhancement behavior, but thick BSLT samples (≥ 60 nm) have much significant enhancement of field emission compared with similar thickness BST samples due to effective supply of emitted electrons in the bulk region of electron-doped BSLT coatings

  19. Low frequency absorption properties of a thin metamaterial absorber with cross-array on the surface of a magnetic substrate

    Science.gov (United States)

    Chen, Qian; Bie, Shaowei; Yuan, Wei; Xu, Yongshun; Xu, Haibing; Jiang, Jianjun

    2016-10-01

    The design, fabrication, and measurement of a metamaterial with broadband microwave absorption properties in the low frequency range are presented in this paper. The metamaterial has a layered structure with a thickness of 2.2 mm, and consists of a conventional printed circuit board (PCB) process fabricated cross array on the surface of a flake-shaped carbonyl iron (CI) powder-filled silicon rubber composite magnetic substrate backed by a metal plane. The measurement results indicate that the absorption bandwidth (defined as the frequency range with reflection coefficient below  -10 dB) of the proposed structure is 2.55 GHz-5.68 GHz. The power loss mechanism was outlined according to the current distribution on and off the resonance frequency. Moreover, the absorption performance of the proposed structure for incident angles ranging from 0° to 60° for both transverse electric (TE) wave and transverse magnetic (TM) waves were exhibited.

  20. 基于普鲁士蓝修饰二氧化硅球腔阵列的葡萄糖传感器制备及应用%Fabrication and Application of Glucose Sensor Based on Prussian Blue Modified Silicon Dioxide Cavities Array

    Institute of Scientific and Technical Information of China (English)

    孙磊; 狄俊伟; 尹凡; 姚甜; 沈菁; 宗水珍

    2012-01-01

      利用Langmuir-Blodgett技术和sol-gel法在氧化铟锡(ITO)电极上构建二氧化硅(SiO2)球腔微电极阵列.在此球腔微电极阵列上电沉积普鲁士蓝膜(PB),用于过氧化氢检测,并采用滴涂法将葡萄糖氧化酶(GOD)直接固定于PB/ SiO2球腔微电极阵列上制得葡萄糖传感器(酶电极),酶电极对葡萄糖电流响应结果表明:葡萄糖浓度在4.7×10-6 mol/L~3.8×10-3 mol/L范围内呈线性关系,其检出限为1.35×10-6 mol/ L,该酶电极不受抗坏血酸、尿酸等电活性物质的干扰,稳定性较好.%  The silicon dioxide (SiO2) cavities microelectrode array was fabricated on the indium tin oxide (ITO) electrode, which was constructed by the Langmuir-Blodgett (LB) technology and sol-gel technology. The Prus⁃sian Blue (PB) film was fabricated on the SiO2 cavities array by electrodeposition technique, which was used to construct electrochemical sensor for the detection of hydrogen dioxide (H2O2). A glucose biosensor was obtained by drop-coating glucose oxidase (GOD) in PB/SiO2 cavities array /ITO electrode directly .The resulting biosensor was highly sensitive to glucose with a linear calibration plot in the concentration range of 4.7×10-6-3.8×10-3 mol/L glucose, the detection limit 1.35×10-6 mol/ L glucose (S/N=3). It is free of interference by ascorbic acid, uric ac⁃id and other active substances .and also have good stability.

  1. 3D, Flash, Induced Current Readout for Silicon Sensors

    Energy Technology Data Exchange (ETDEWEB)

    Parker, Sherwood I. [Univ. of Hawaii, Honolulu, HI (United States)

    2014-06-07

    A new method for silicon microstrip and pixel detector readout using (1) 65 nm-technology current amplifers which can, for the first time with silicon microstrop and pixel detectors, have response times far shorter than the charge collection time (2) 3D trench electrodes large enough to subtend a reasonable solid angle at most track locations and so have adequate sensitivity over a substantial volume of pixel, (3) induced signals in addition to, or in place of, collected charge

  2. Amorphous silicon for thin-film transistors

    OpenAIRE

    Schropp, Rudolf Emmanuel Isidore

    1987-01-01

    Hydrogenated amorphous silicon (a-Si:H) has considerable potential as a semiconducting material for large-area photoelectric and photovoltaic applications. Moreover, a-Si:H thin-film transistors (TFT’s) are very well suited as switching devices in addressable liquid crystal display panels and addressable image sensor arrays, due to a new technology of low-cost, Iow-temperature processing overlarge areas. ... Zie: Abstract

  3. Multimodal Electrothermal Silicon Microgrippers for Nanotube Manipulation

    DEFF Research Database (Denmark)

    Nordström Andersen, Karin; Petersen, Dirch Hjorth; Carlson, Kenneth;

    2009-01-01

    Microgrippers that are able to manipulate nanoobjects reproducibly are key components in 3-D nanomanipulation systems. We present here a monolithic electrothermal microgripper prepared by silicon microfabrication, and demonstrate pick-and-place of an as-grown carbon nanotube from a 2-D array onto...... a transmission electron microscopy grid, as a first step toward a reliable and precise pick-and-place process for carbon nanotubes....

  4. Angle-deviation optical profilometer

    Institute of Scientific and Technical Information of China (English)

    Chen-Tai Tan; Yuan-Sheng Chan; Zhen-Chin Lin; Ming-Hung Chiu

    2011-01-01

    @@ We propose a new optical profilometer for three-dimensional (3D) surface profile measurement in real time.The deviation angle is based on geometrical optics and is proportional to the apex angle of a test plate.Measuring the reflectivity of a parallelogram prism allows detection of the deviation angle when the beam is incident at the nearby critical angle. The reflectivity is inversely proportional to the deviation angle and proportional to the apex angle and surface height. We use a charge-coupled device (CCD) camera at the image plane to capture the reflectivity profile and obtain the 3D surface profile directly.%We propose a new optical profilometer for three-dimensional (3D) surface profile measurement in real time.The deviation angle is based on geometrical optics and is proportional to the apex angle of a test plate.Measuring the refiectivity of a parallelogram prism allows detection of the deviation angle when the beam is incident at the nearby critical angle. The refiectivity is inversely proportional to the deviation angle and proportional to the apex angle and surface height. We use a charge-coupled device (CCD) camera at the image plane to capture the refiectivity profile and obtain the 3D surface profile directly.

  5. Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy

    KAUST Repository

    Heo, Junseok

    2013-10-01

    GaN nanowires containing AlN/GaN distributed Bragg reflector (DBR) heterostructures have been grown on (001) silicon substrate by molecular beam epitaxy. A peak reflectance of 70% with normal incidence at 560 nm is derived from angle resolved reflectance measurements on the as-grown nanowire DBR array. The measured peak reflectance wavelength is significantly blue-shifted from the ideal calculated value. The discrepancy is explained by investigating the reflectance of the nanoscale DBRs with a finite difference time domain technique. Ensemble nanowire microcavities with In0.3Ga 0.7N nanowires clad by AlN/GaN DBRs have also been characterized. Room temperature emission from the microcavity exhibits considerable linewidth narrowing compared to that measured for unclad In0.3Ga0.7N nanowires. The resonant emission is characterized by a peak wavelength and linewidth of 575 nm and 39 nm, respectively. © 2013 AIP Publishing LLC.

  6. Robust hydrophobic surfaces with various micropillar arrays

    International Nuclear Information System (INIS)

    In the present study, we design, fabricate and characterize robust hydrophobic surfaces on which four different shapes (rectangle, circle, triangle and cross) of a micropillar array are patterned. Various micropillar arrays are designed to give rise to the same Wenzel and Cassie contact angles (CAs) of the surfaces through changes in the shape and size of the micropillar and the spacing between adjacent micropillars. The designed surfaces are fabricated using polydimethylsiloxane (PDMS) replica molding with photolithographically manufactured SU-8 masters. The hydrophobicities of the various PDMS surfaces are evaluated through theoretical and experimental measurements of the water CAs. The theoretical and experimental CAs are strongly correlated to each other, as expected. The generalization of the suggested design rule was carried out by introducing effective parameters of square-arranged micropillar arrays. The apparent contact angle of the robust hydrophobic surface monotonically increases as the top surface area decreases for a given perimeter and height.

  7. Silicon microcantilevers as sensors

    Science.gov (United States)

    Dhayal, Babita

    This work focuses on the general use of microcantilever arrays for parallel detection of multiple analytes and understanding the mechanics behind it. The system employs an array of eight silicon micro cantilevers and has the capability of measuring cantilever deflection due to differential surface stress generated as well as frequency change due to added mass in both gaseous and liquid environments. In this work, we move beyond antibody-antigen binding systems and demonstrate that short peptides ligands can be used to efficiently capture Bacillus subtilis and Bacillus anthracis spores in liquids, given that specific peptides corresponding to the particular bacteria are synthesized. These peptide functionalized cantilever array can be stored under ambient conditions for days without loss of functionality, making then suitable for in-field use. A detailed experimental protocol, optimizing every step is presented. Applications of this technology can serve as a platform for the detection of pathogenic organisms including biowarfare agents. The dominant physical phenomena producing surface-stress during molecular binding are difficult to specify a priori. Differential surface stress generated due to adsorption of small molecules on gold coated cantilevers is measured to gain insight into the mechanisms involved in the self-assembly process and into the origin of associated the surface stress. Our experiments indicate that the contribution from inter-molecular Lennard-Jones interactions and binding energy between the end group and the functionalized surface play a minimal role in the development of surface stress. Electrostatic repulsion between adsorbed species stress and Changes in the electronic structure of the underlying gold substrate play an important role in surface stress generation. To achieve higher sensitivity in the performance of cantilever sensors, optimized cantilevers of different dimensions are required. By adjusting cantilever dimensions, it is

  8. Wind loads on flat plate photovoltaic array fields

    Science.gov (United States)

    Miller, R. D.; Zimmerman, D. K.

    1981-01-01

    The results of an experimental analysis (boundary layer wind tunnel test) of the aerodynamic forces resulting from winds acting on flat plate photovoltaic arrays are presented. Local pressure coefficient distributions and normal force coefficients on the arrays are shown and compared to theoretical results. Parameters that were varied when determining the aerodynamic forces included tilt angle, array separation, ground clearance, protective wind barriers, and the effect of the wind velocity profile. Recommended design wind forces and pressures are presented, which envelop the test results for winds perpendicular to the array's longitudinal axis. This wind direction produces the maximum wind loads on the arrays except at the array edge where oblique winds produce larger edge pressure loads. The arrays located at the outer boundary of an array field have a protective influence on the interior arrays of the field. A significant decrease of the array wind loads were recorded in the wind tunnel test on array panels located behind a fence and/or interior to the array field compared to the arrays on the boundary and unprotected from the wind. The magnitude of this decrease was the same whether caused by a fence or upwind arrays.

  9. A surface code quantum computer in silicon.

    Science.gov (United States)

    Hill, Charles D; Peretz, Eldad; Hile, Samuel J; House, Matthew G; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y; Hollenberg, Lloyd C L

    2015-10-01

    The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel-posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited. PMID:26601310

  10. Development of an angled Si-PM-based detector unit for positron emission mammography (PEM) system

    Science.gov (United States)

    Nakanishi, Kouhei; Yamamoto, Seiichi

    2016-11-01

    Positron emission mammography (PEM) systems have higher sensitivity than clinical whole body PET systems because they have a smaller ring diameter. However, the spatial resolution of PEM systems is not high enough to detect early stage breast cancer. To solve this problem, we developed a silicon photomultiplier (Si-PM) based detector unit for the development of a PEM system. Since a Si-PM's channel is small, Si-PM can resolve small scintillator pixels to improve the spatial resolution. Also Si-PM based detectors have inherently high timing resolution and are able to reduce the random coincidence events by reducing the time window. We used 1.5×1.9×15 mm LGSO scintillation pixels and arranged them in an 8×24 matrix to form scintillator blocks. Four scintillator blocks were optically coupled to Si-PM arrays with an angled light guide to form a detector unit. Since the light guide has angles of 5.625°, we can arrange 64 scintillator blocks in a nearly circular shape (a regular 64-sided polygon) using 16 detector units. We clearly resolved the pixels of the scintillator blocks in a 2-dimensional position histogram where the averages of the peak-to-valley ratios (P/Vs) were 3.7±0.3 and 5.7±0.8 in the transverse and axial directions, respectively. The average energy resolution was 14.2±2.1% full-width at half-maximum (FWHM). By including the temperature dependent gain control electronics, the photo-peak channel shifts were controlled within ±1.5% with the temperature from 23 °C to 28 °C. With these results, in addition to the potential high timing performance of Si-PM based detectors, our developed detector unit is promising for the development of a high-resolution PEM system.

  11. Wettability transparency and the quasiuniversal relationship between hydrodynamic slip and contact angle

    Science.gov (United States)

    Ramos-Alvarado, Bladimir; Kumar, Satish; Peterson, G. P.

    2016-02-01

    The universality of the scaling laws that correlate the hydrodynamic slip length and static contact angle was investigated by introducing the concept of the wettability transparency of graphene-coated surfaces. Equilibrium molecular dynamics simulations of droplet wettability for Si(111), Si(100), and graphene-coated silicon surfaces were performed to determine the conditions required to obtain similar contact angles between bare and graphene-coated surfaces (wettability transparency). The hydrodynamic slip length was determined by means of equilibrium calculations for silicon and graphene-coated silicon nanochannels. The results indicate that the slip-wettability scaling laws can be used to describe the slip behavior of the bare silicon nanochannels in general terms; however, clear departures from a general universal description were observed for hydrophobic conditions. In addition, a significant difference in the hydrodynamic slippage was observed under wettability transparency conditions. Alternatively, the hydrodynamic boundary condition for silicon and graphene-coated silicon nanochannels was more accurately predicted by observing the density depletion length, posing this parameter as a better alternative than the contact angle to correlate with the slip length.

  12. Doping Silicon Wafers with Boron by Use of Silicon Paste

    Institute of Scientific and Technical Information of China (English)

    Yu Gao; Shu Zhou; Yunfan Zhang; Chen Dong; Xiaodong Pi; Deren Yang

    2013-01-01

    In this work we introduce recently developed silicon-paste-enabled p-type doping for silicon.Boron-doped silicon nanoparticles are synthesized by a plasma approach.They are then dispersed in solvents to form silicon paste.Silicon paste is screen-printed at the surface of silicon wafers.By annealing,boron atoms in silicon paste diffuse into silicon wafers.Chemical analysis is employed to obtain the concentrations of boron in silicon nanoparticles.The successful doping of silicon wafers with boron is evidenced by secondary ion mass spectroscopy (SIMS) and sheet resistance measurements.

  13. Micromachined cutting blade formed from {211}-oriented silicon

    Energy Technology Data Exchange (ETDEWEB)

    Fleming, James G.; Sniegowski, Jeffry J.; Montague, Stephen

    2003-09-09

    A cutting blade is disclosed fabricated of micromachined silicon. The cutting blade utilizes a monocrystalline silicon substrate having a {211} crystalline orientation to form one or more cutting edges that are defined by the intersection of {211} crystalline planes of silicon with {111} crystalline planes of silicon. This results in a cutting blade which has a shallow cutting-edge angle .theta. of 19.5.degree.. The micromachined cutting blade can be formed using an anisotropic wet etching process which substantially terminates etching upon reaching the {111} crystalline planes of silicon. This allows multiple blades to be batch fabricated on a common substrate and separated for packaging and use. The micromachined cutting blade, which can be mounted to a handle in tension and optionally coated for increased wear resistance and biocompatibility, has multiple applications including eye surgery (LASIK procedure).

  14. Micromachined cutting blade formed from {211}-oriented silicon

    Energy Technology Data Exchange (ETDEWEB)

    Fleming, James G. (Albuquerque, NM); Fleming, legal representative, Carol (Burbank, CA); Sniegowski, Jeffry J. (Tijeras, NM); Montague, Stephen (Albuquerque, NM)

    2011-08-09

    A cutting blade is disclosed fabricated of micromachined silicon. The cutting blade utilizes a monocrystalline silicon substrate having a {211} crystalline orientation to form one or more cutting edges that are defined by the intersection of {211} crystalline planes of silicon with {111} crystalline planes of silicon. This results in a cutting blade which has a shallow cutting-edge angle .theta. of 19.5.degree.. The micromachined cutting blade can be formed using an anisotropic wet etching process which substantially terminates etching upon reaching the {111} crystalline planes of silicon. This allows multiple blades to be batch fabricated on a common substrate and separated for packaging and use. The micromachined cutting blade, which can be mounted to a handle in tension and optionally coated for increased wear resistance and biocompatibility, has multiple applications including eye surgery (LASIK procedure).

  15. Silicon-based thin-film transistors with a high stability

    NARCIS (Netherlands)

    Stannowski, Bernd

    2002-01-01

    Thin-Film Transistors (TFTs) are widely applied as pixel-addressing devices in large-area electronics, such as active-matrix liquid-crystal displays (AMLCDs) or sensor arrays. Hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiNx:H) are generally used as the semiconductor and the insul

  16. Enhanced Plasmonic Light Absorption for Silicon Schottky-Barrier Photodetectors

    DEFF Research Database (Denmark)

    Hashemi, Mahdieh; Farzad, Mahmood Hosseini; Mortensen, N. Asger;

    2013-01-01

    Quantum efficiency of the silicon Schottky-barrier photodetector is limited by the weak interaction between the photons and electrons in the metal. By engineering the metal surfaces, metallic groove structures are proposed to achieve strong light absorption in the metal, where most of the energy...... is transferred into hot carriers near the Schottky barrier. The proposed broadband photodetector with a bi-grating metallic structure on the silicon substrate enables to absorb 76 % of the infrared light in the metal with a 200-nm bandwidth, while staying insensitive to the incident angle. These results pave...... a new promising way to attain high quantum efficiency silicon Schottky-barrier photodetectors....

  17. Superhydrophobic silicone fiber mats fabricated by electrospinning from solution

    Science.gov (United States)

    Ludwig, Bonnie; Clark, Aneta; Snow, Steven; Hill, Randal; Schmidt, Randall; Fogg, Brad; Lo, Peter

    2007-03-01

    Fine silicone fibers of 1 -- 20 μm diameter were fabricated from solution via electrospinning. These are the first examples of fine fibers prepared from silicone homopolymers. Fiber morphology (beaded, ribbon-like, smooth) and diameter were controlled. The nanoscale surface roughness of nonwoven fiber mats created with silicone fibers produced a superhydrophobic surface that had a water contact angle of ˜160^o. The superhydrophobic surface was made reversibly hydrophilic with exposure to oxygen plasma. The combination of high surface area and superhydrophobicity suggests potential applications in the areas of water-repellent textiles, filtration, adsorption and chemical separations, wound dressings, and fuel cells.

  18. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    2001-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible luminescenc

  19. Cylindrical array luminescent solar concentrators: performance boosts by geometric effects.

    Science.gov (United States)

    Videira, Jose J H; Bilotti, Emiliano; Chatten, Amanda J

    2016-07-11

    This paper presents an investigation of the geometric effects within a cylindrical array luminescent solar concentrator (LSC). Photon concentration of a cylindrical LSC increases linearly with cylinder length up to 2 metres. Raytrace modelling on the shading effects of circles on their neighbours demonstrates effective incident light trapping in a cylindrical LSC array at angles of incidence between 60-70 degrees. Raytrace modelling with real-world lighting conditions shows optical efficiency boosts when the suns angle of incidence is within this angle range. On certain days, 2 separate times of peak optical efficiency can be attained over the course of sunrise-solar noon. PMID:27410904

  20. Amorphous silicon thin film transistor active-matrix organic light-emitting diode displays fabricated on flexible substrates

    Science.gov (United States)

    Nichols, Jonathan A.

    Organic light-emitting diode (OLED) displays are of immense interest because they have several advantages over liquid crystal displays, the current dominant flat panel display technology. OLED displays are emissive and therefore are brighter, have a larger viewing angle, and do not require backlights and filters, allowing thinner, lighter, and more power efficient displays. The goal of this work was to advance the state-of-the-art in active-matrix OLED display technology. First, hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) active-matrix OLED pixels and arrays were designed and fabricated on glass substrates. The devices operated at low voltages and demonstrated that lower performance TFTs could be utilized in active-matrix OLED displays, possibly allowing lower cost processing and the use of polymeric substrates. Attempts at designing more control into the display at the pixel level were also made. Bistable (one bit gray scale) active-matrix OLED pixels and arrays were designed and fabricated. Such pixels could be used in novel applications and eventually help reduce the bandwidth requirements in high-resolution and large-area displays. Finally, a-Si:H TFT active-matrix OLED pixels and arrays were fabricated on a polymeric substrate. Displays fabricated on a polymeric substrates would be lightweight; flexible, more rugged, and potentially less expensive to fabricate. Many of the difficulties associated with fabricating active-matrix backplanes on flexible substrates were studied and addressed.