Sparse Array Angle Estimation Using Reduced-Dimension ESPRIT-MUSIC in MIMO Radar

Directory of Open Access Journals (Sweden)

Chaozhu Zhang

2013-01-01

Full Text Available Sparse linear arrays provide better performance than the filled linear arrays in terms of angle estimation and resolution with reduced size and low cost. However, they are subject to manifold ambiguity. In this paper, both the transmit array and receive array are sparse linear arrays in the bistatic MIMO radar. Firstly, we present an ESPRIT-MUSIC method in which ESPRIT algorithm is used to obtain ambiguous angle estimates. The disambiguation algorithm uses MUSIC-based procedure to identify the true direction cosine estimate from a set of ambiguous candidate estimates. The paired transmit angle and receive angle can be estimated and the manifold ambiguity can be solved. However, the proposed algorithm has high computational complexity due to the requirement of two-dimension search. Further, the Reduced-Dimension ESPRIT-MUSIC (RD-ESPRIT-MUSIC is proposed to reduce the complexity of the algorithm. And the RD-ESPRIT-MUSIC only demands one-dimension search. Simulation results demonstrate the effectiveness of the method.

Sparse array angle estimation using reduced-dimension ESPRIT-MUSIC in MIMO radar.

Science.gov (United States)

Zhang, Chaozhu; Pang, Yucai

2013-01-01

Sparse linear arrays provide better performance than the filled linear arrays in terms of angle estimation and resolution with reduced size and low cost. However, they are subject to manifold ambiguity. In this paper, both the transmit array and receive array are sparse linear arrays in the bistatic MIMO radar. Firstly, we present an ESPRIT-MUSIC method in which ESPRIT algorithm is used to obtain ambiguous angle estimates. The disambiguation algorithm uses MUSIC-based procedure to identify the true direction cosine estimate from a set of ambiguous candidate estimates. The paired transmit angle and receive angle can be estimated and the manifold ambiguity can be solved. However, the proposed algorithm has high computational complexity due to the requirement of two-dimension search. Further, the Reduced-Dimension ESPRIT-MUSIC (RD-ESPRIT-MUSIC) is proposed to reduce the complexity of the algorithm. And the RD-ESPRIT-MUSIC only demands one-dimension search. Simulation results demonstrate the effectiveness of the method.

Fluorinion transfer in silver-assisted chemical etching for silicon nanowires arrays

International Nuclear Information System (INIS)

Feng, Tianyu; Xu, Youlong; Zhang, Zhengwei; Mao, Shengchun

2015-01-01

Graphical abstract: - Highlights: • How Ag transfers F − to the adjacent Si atom was investigated and deduced by DFT at atomic scale. • Three-electrode CV tests proved the transferring function of Ag in the etching reaction. • Uniform SiNWAs were fabricated on unpolished silicon wafers with KOH pretreatment. - Abstract: Uniform silicon nanowires arrays (SiNWAs) were fabricated on unpolished rough silicon wafers through KOH pretreatment followed by silver-assisted chemical etching (SACE). Density functional theory (DFT) calculations were used to investigate the function of silver (Ag) at atomic scale in the etching process. Among three adsorption sites of Ag atom on Si(1 0 0) surface, Ag(T4) above the fourth-layer surface Si atoms could transfer fluorinion (F − ) to adjacent Si successfully due to its stronger electrostatic attraction force between Ag(T4) and F − , smaller azimuth angle of F−Ag(T4)−Si, shorter bond length of F−Si compared with F−Ag. As F − was transferred to adjacent Si by Ag(T4) one by one, the Si got away from the wafer in the form of SiF 4 when it bonded with enough F − while Ag(T4) was still attached onto the Si wafer ready for next transfer. Cyclic voltammetry tests confirmed that Ag can improve the etching rate by transferring F − to Si

Light Trapping with Silicon Light Funnel Arrays

Directory of Open Access Journals (Sweden)

Ashish Prajapati

2018-03-01

Full Text Available Silicon light funnels are three-dimensional subwavelength structures in the shape of inverted cones with respect to the incoming illumination. Light funnel (LF arrays can serve as efficient absorbing layers on account of their light trapping capabilities, which are associated with the presence of high-density complex Mie modes. Specifically, light funnel arrays exhibit broadband absorption enhancement of the solar spectrum. In the current study, we numerically explore the optical coupling between surface light funnel arrays and the underlying substrates. We show that the absorption in the LF array-substrate complex is higher than the absorption in LF arrays of the same height (~10% increase. This, we suggest, implies that a LF array serves as an efficient surface element that imparts additional momentum components to the impinging illumination, and hence optically excites the substrate by near-field light concentration, excitation of traveling guided modes in the substrate, and mode hybridization.

Plasma jet array treatment to improve the hydrophobicity of contaminated HTV silicone rubber

Science.gov (United States)

Zhang, Ruobing; Han, Qianting; Xia, Yan; Li, Shuang

2017-10-01

An atmospheric-pressure plasma jet array specially designed for HTV silicone rubber treatment is reported in this paper. Stable plasma containing highly energetic active particles was uniformly generated in the plasma jet array. The discharge pattern was affected by the applied voltage. The divergence phenomenon was observed at low gas flow rate and abated when the flow rate increased. Temperature of the plasma plume is close to room temperature which makes it feasible for temperature-sensitive material treatment. Hydrophobicity of contaminated HTV silicone rubber was significantly improved after quick exposure of the plasma jet array, and the effective treatment area reached 120 mm × 50 mm (length × width). Reactive particles in the plasma accelerate accumulation of the hydrophobic molecules, namely low molecular weight silicone chains, on the contaminated surface, which result in a hydrophobicity improvement of the HTV silicone rubber.

Nanofabrication of Arrays of Silicon Field Emitters with Vertical Silicon Nanowire Current Limiters and Self-Aligned Gates

Science.gov (United States)

2016-08-19

limiters, MEMS, NEMS, field emission, cold cathodes (Some figures may appear in colour only in the online journal) 1. Introduction Dense arrays of silicon... attention has been given to densely packed, highly ordered, top-down fabricated, single crystal vertical silicon nanowire devices that are embedded

Quantitative measurements of C-reactive protein using silicon nanowire arrays

Directory of Open Access Journals (Sweden)

Min-Ho Lee

2008-03-01

Full Text Available Min-Ho Lee, Kuk-Nyung Lee, Suk-Won Jung, Won-Hyo Kim, Kyu-Sik Shin, Woo-Kyeong SeongKorea Electronics Technology Institute, Gyeonggi, KoreaAbstract: A silicon nanowire-based sensor for biological application showed highly desirable electrical responses to either pH changes or receptor-ligand interactions such as protein disease markers, viruses, and DNA hybridization. Furthermore, because the silicon nanowire can display results in real-time, it may possess superior characteristics for biosensing than those demonstrated in previously studied methods. However, despite its promising potential and advantages, certain process-related limitations of the device, due to its size and material characteristics, need to be addressed. In this article, we suggest possible solutions. We fabricated silicon nanowire using a top-down and low cost micromachining method, and evaluate the sensing of molecules after transfer and surface modifications. Our newly designed method can be used to attach highly ordered nanowires to various substrates, to form a nanowire array device, which needs to follow a series of repetitive steps in conventional fabrication technology based on a vapor-liquid-solid (VLS method. For evaluation, we demonstrated that our newly fabricated silicon nanowire arrays could detect pH changes as well as streptavidin-biotin binding events. As well as the initial proof-of-principle studies, C-reactive protein binding was measured: electrical signals were changed in a linear fashion with the concentration (1 fM to 1 nM in PBS containing 1.37 mM of salts. Finally, to address the effects of Debye length, silicon nanowires coupled with antigen proteins underwent electrical signal changes as the salt concentration changed.Keywords: silicon nanowire array, C-reactive protein, vapor-liquid-solid method

Crosstalk analysis of silicon-on-insulator nanowire-arrayed waveguide grating

International Nuclear Information System (INIS)

Li Kai-Li; An Jun-Ming; Zhang Jia-Shun; Wang Yue; Wang Liang-Liang; Li Jian-Guang; Wu Yuan-Da; Yin Xiao-Jie; Hu Xiong-Wei

2016-01-01

The factors influencing the crosstalk of silicon-on-insulator (SOI) nanowire arrayed waveguide grating (AWG) are analyzed using the transfer function method. The analysis shows that wider and thicker arrayed waveguides, outsider fracture of arrayed waveguide, and larger channel space, could mitigate the deterioration of crosstalk. The SOI nanowire AWGs with different arrayed waveguide widths are fabricated by using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technology. The measurement results show that the crosstalk performance is improved by about 7 dB through adopting 800 nm arrayed waveguide width. (paper)

Structure and field emission of graphene layers on top of silicon nanowire arrays

International Nuclear Information System (INIS)

Huang, Bohr-Ran; Chan, Hui-Wen; Jou, Shyankay; Chen, Guan-Yu; Kuo, Hsiu-An; Song, Wan-Jhen

2016-01-01

Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

Structure and field emission of graphene layers on top of silicon nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Huang, Bohr-Ran; Chan, Hui-Wen [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Jou, Shyankay, E-mail: sjou@mail.ntust.edu.tw [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Chen, Guan-Yu [Graduate Institute of Electro-Optical Engineering and Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Kuo, Hsiu-An; Song, Wan-Jhen [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China)

2016-01-30

Graphical abstract: - Highlights: • We prepared graphene on top of silicon nanowires by transfer-print technique. • Graphene changed from discrete flakes to a continuous by repeated transfer-print. • The triple-layer graphene had high electron field emission due to large edge ratio. - Abstract: Monolayer graphene was grown on copper foils and then transferred on planar silicon substrates and on top of silicon nanowire (SiNW) arrays to form single- to quadruple-layer graphene films. The morphology, structure, and electron field emission (FE) of these graphene films were investigated. The graphene films on the planar silicon substrates were continuous. The single- to triple-layer graphene films on the SiNW arrays were discontinuous and while the quadruple-layer graphene film featured a mostly continuous area. The Raman spectra of the graphene films on the SiNW arrays showed G and G′ bands with a singular-Lorentzian shape together with a weak D band. The D band intensity decreased as the number of graphene layers increased. The FE efficiency of the graphene films on the planar silicon substrates and the SiNW arrays varied with the number of graphene layers. The turn-on field for the single- to quadruple-layer graphene films on planar silicon substrates were 4.3, 3.7, 3.5 and 3.4 V/μm, respectively. The turn-on field for the single- to quadruple-layer graphene films on SiNW arrays decreased to 3.9, 3.3, 3.0 and 3.3 V/μm, respectively. Correlation of the FE with structure and morphology of the graphene films is discussed.

Extended Hubbard model for mesoscopic transport in donor arrays in silicon

Science.gov (United States)

Le, Nguyen H.; Fisher, Andrew J.; Ginossar, Eran

2017-12-01

Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous donors in silicon due to the strong intersite interaction in the system. We also study the resonant tunneling transport in the array at low temperature as a mean of probing the features of the Hubbard physics, such as the Hubbard bands and the Mott gap. Two mechanisms of localization which suppresses transport in the array are investigated: The first arises from the electron-ion core attraction and is significant at low filling; the second is due to the sharp oscillation in the tunnel coupling caused by the intervalley interference of the donor electron's wave function. This disorder in the tunnel coupling leads to a steep exponential decay of conductance with channel length in one-dimensional arrays, but its effect is less prominent in two-dimensional ones. Hence, it is possible to observe resonant tunneling transport in a relatively large array in two dimensions.

Indoor Measurement of Angle Resolved Light Absorption by Black Silicon

DEFF Research Database (Denmark)

Amdemeskel, Mekbib Wubishet; Iandolo, Beniamino; Davidsen, Rasmus Schmidt

2017-01-01

Angle resolved optical spectroscopy of photovoltaic (PV) samples gives crucial information on PV panels under realistic working conditions. Here, we introduce measurements of angle resolved light absorption by PV cells, performed indoors using a collimated high radiance broadband light source. Our...... indoor method offers a significant simplification as compared to measurements by solar trackers. As a proof-of-concept demonstration, we show characterization of black silicon solar cells. The experimental results showed stable and reliable optical responses that makes our setup suitable for indoor......, angle resolved characterization of solar cells....

Determination of parameters for successful spray coating of silicon microneedle arrays.

Science.gov (United States)

McGrath, Marie G; Vrdoljak, Anto; O'Mahony, Conor; Oliveira, Jorge C; Moore, Anne C; Crean, Abina M

2011-08-30

Coated microneedle patches have demonstrated potential for effective, minimally invasive, drug and vaccine delivery. To facilitate cost-effective, industrial-scale production of coated microneedle patches, a continuous coating method which utilises conventional pharmaceutical processes is an attractive prospect. Here, the potential of spray-coating silicon microneedle patches using a conventional film-coating process was evaluated and the key process parameters which impact on coating coalescence and weight were identified by employing a fractional factorial design to coat flat silicon patches. Processing parameters analysed included concentration of coating material, liquid input rate, duration of spraying, atomisation air pressure, gun-to-surface distance and air cap setting. Two film-coating materials were investigated; hydroxypropylmethylcellulose (HPMC) and carboxymethylcellulose (CMC). HPMC readily formed a film-coat on silicon when suitable spray coating parameter settings were determined. CMC films required the inclusion of a surfactant (1%, w/w Tween 80) to facilitate coalescence of the sprayed droplets on the silicon surface. Spray coating parameters identified by experimental design, successfully coated 280μm silicon microneedle arrays, producing an intact film-coat, which follows the contours of the microneedle array without occlusion of the microneedle shape. This study demonstrates a novel method of coating microneedle arrays with biocompatible polymers using a conventional film-coating process. It is the first study to indicate the thickness and roughness of coatings applied to microneedle arrays. The study also highlights the importance of identifying suitable processing parameters when film coating substrates of micron dimensions. The ability of a fractional factorial design to identify these critical parameters is also demonstrated. The polymer coatings applied in this study can potentially be drug loaded for intradermal drug and vaccine delivery

Active phase correction of high resolution silicon photonic arrayed waveguide gratings.

Science.gov (United States)

Gehl, M; Trotter, D; Starbuck, A; Pomerene, A; Lentine, A L; DeRose, C

2017-03-20

Arrayed waveguide gratings provide flexible spectral filtering functionality for integrated photonic applications. Achieving narrow channel spacing requires long optical path lengths which can greatly increase the footprint of devices. High index contrast waveguides, such as those fabricated in silicon-on-insulator wafers, allow tight waveguide bends which can be used to create much more compact designs. Both the long optical path lengths and the high index contrast contribute to significant optical phase error as light propagates through the device. Therefore, silicon photonic arrayed waveguide gratings require active or passive phase correction following fabrication. Here we present the design and fabrication of compact silicon photonic arrayed waveguide gratings with channel spacings of 50, 10 and 1 GHz. The largest device, with 11 channels of 1 GHz spacing, has a footprint of only 1.1 cm2. Using integrated thermo-optic phase shifters, the phase error is actively corrected. We present two methods of phase error correction and demonstrate state-of-the-art cross-talk performance for high index contrast arrayed waveguide gratings. As a demonstration of possible applications, we perform RF channelization with 1 GHz resolution. Additionally, we generate unique spectral filters by applying non-zero phase offsets calculated by the Gerchberg Saxton algorithm.

Oil Contact Angles in a Water-Decane-Silicon Dioxide System: Effects of Surface Charge.

Science.gov (United States)

Xu, Shijing; Wang, Jingyao; Wu, Jiazhong; Liu, Qingjie; Sun, Chengzhen; Bai, Bofeng

2018-04-19

Oil wettability in the water-oil-rock systems is very sensitive to the evolution of surface charges on the rock surfaces induced by the adsorption of ions and other chemical agents in water flooding. Through a set of large-scale molecular dynamics simulations, we reveal the effects of surface charge on the oil contact angles in an ideal water-decane-silicon dioxide system. The results show that the contact angles of oil nano-droplets have a great dependence on the surface charges. As the surface charge density exceeds a critical value of 0.992 e/nm 2 , the contact angle reaches up to 78.8° and the water-wet state is very apparent. The variation of contact angles can be confirmed from the number density distributions of oil molecules. With increasing the surface charge density, the adsorption of oil molecules weakens and the contact areas between nano-droplets and silicon dioxide surface are reduced. In addition, the number density distributions, RDF distributions, and molecular orientations indicate that the oil molecules are adsorbed on the silicon dioxide surface layer-by-layer with an orientation parallel to the surface. However, the layered structure of oil molecules near the silicon dioxide surface becomes more and more obscure at higher surface charge densities.

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-10-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-01-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

High density micro-pyramids with silicon nanowire array for photovoltaic applications

International Nuclear Information System (INIS)

Rahman, Tasmiat; Navarro-Cía, Miguel; Fobelets, Kristel

2014-01-01

We use a metal assisted chemical etch process to fabricate silicon nanowire arrays (SiNWAs) onto a dense periodic array of pyramids that are formed using an alkaline etch masked with an oxide layer. The hybrid micro-nano structure acts as an anti-reflective coating with experimental reflectivity below 1% over the visible and near-infrared spectral regions. This represents an improvement of up to 11 and 14 times compared to the pyramid array and SiNWAs on bulk, respectively. In addition to the experimental work, we optically simulate the hybrid structure using a commercial finite difference time domain package. The results of the optical simulations support our experimental work, illustrating a reduced reflectivity in the hybrid structure. The nanowire array increases the absorbed carrier density within the pyramid by providing a guided transition of the refractive index along the light path from air into the silicon. Furthermore, electrical simulations which take into account surface and Auger recombination show an efficiency increase for the hybrid structure of 56% over bulk, 11% over pyramid array and 8.5% over SiNWAs. (paper)

The Argonne silicon strip-detector array

Energy Technology Data Exchange (ETDEWEB)

Wuosmaa, A H; Back, B B; Betts, R R; Freer, M; Gehring, J; Glagola, B G; Happ, Th; Henderson, D J; Wilt, P [Argonne National Lab., IL (United States); Bearden, I G [Purdue Univ., Lafayette, IN (United States). Dept. of Physics

1992-08-01

Many nuclear physics experiments require the ability to analyze events in which large numbers of charged particles are detected and identified simultaneously, with good resolution and high efficiency, either alone, or in coincidence with gamma rays. The authors have constructed a compact large-area detector array to measure these processes efficiently and with excellent energy resolution. The array consists of four double-sided silicon strip detectors, each 5x5 cm{sup 2} in area, with front and back sides divided into 16 strips. To exploit the capability of the device fully, a system to read each strip-detector segment has been designed and constructed, based around a custom-built multi-channel preamplifier. The remainder of the system consists of high-density CAMAC modules, including multi-channel discriminators, charge-sensing analog-to-digital converters, and time-to-digital converters. The array`s performance has been evaluated using alpha-particle sources, and in a number of experiments conducted at Argonne and elsewhere. Energy resolutions of {Delta}E {approx} 20-30 keV have been observed for 5 to 8 MeV alpha particles, as well as time resolutions {Delta}T {<=} 500 ps. 4 figs.

The Use of Self-scanned Silicon Photodiode Arrays for Astronomical Spectrophotometry

Science.gov (United States)

Cochran, A. L.

1984-01-01

The use of a Reticon self scanned silicon photodiode array for precision spectrophotometry is discussed. It is shown that internal errors are + or - 0.003 mag. Observations obtained with a photodiode array are compared with observations obtained with other types of detectors with agreement, from 3500 A to 10500 A, of 1%. The photometric properties of self scanned photodiode arrays are discussed. Potential pitfalls are given.

Cobalt nanosheet arrays supported silicon film as anode materials for lithium ion batteries

International Nuclear Information System (INIS)

Huang, X.H.; Wu, J.B.; Cao, Y.Q.; Zhang, P.; Lin, Y.; Guo, R.Q.

2016-01-01

Cobalt nanosheet arrays supported silicon film is prepared and used as anode materials for lithium ion batteries. The film is fabricated using chemical bath deposition, hydrogen reduction and radio-frequency magnetron sputtering techniques. The microstructure and morphology are characterized by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS). In this composite film, the silicon layer is supported by interconnected aligned cobalt nanosheet arrays that act as the three-dimensional current collector and buffering network. The electrochemical performance as anode materials for lithium ion batteries is investigated by cyclic voltammetry (CV) and galvanostatic charge-discharge tests. The results show that the film prepared by sputtering for 1500 s exhibits high capacity, good rate capability and stable cycle ability. It is believed that the cobalt nanosheet arrays play important roles in the electrochemical performance of the silicon layer.

Characterization of X3 Silicon Detectors for the ELISSA Array at ELI-NP

Science.gov (United States)

Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Cognata, M. La; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; Spitaleri, C.; State, A.; Xu, Y.

2018-01-01

Position-sensitive silicon strip detectors represent one of the best solutions for the detection of charged particles as they provide good energy and position resolution over a large range of energies. A silicon array coupled with the gamma beams at the ELI-NP facility would allow measuring photodissociation reactions of interest for Big Bang Nucleosynthesis and on heavy nuclei intervening in the p-process. Forty X3 detectors for our ELISSA (ELI-NP Silicon Strip Detectors Array) project have been recently purchased and tested. We investigated several specifications, such as leakage currents, depletion voltage, and detector stability under vacuum. The energy and position resolution, and ballistic deficit were measured and analyzed. This paper presents the main results of our extensive testing. The measured energy resolution for the X3 detectors is better than results published for similar arrays (ANASEN or ORRUBA).

Silicon monolithic microchannel-cooled laser diode array

International Nuclear Information System (INIS)

Skidmore, J. A.; Freitas, B. L.; Crawford, J.; Satariano, J.; Utterback, E.; DiMercurio, L.; Cutter, K.; Sutton, S.

2000-01-01

A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 degree sign C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm 2 is achieved cw at an emission wavelength of ∼808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. (c) 2000 American Institute of Physics

Target Tracking Using SePDAF under Ambiguous Angles for Distributed Array Radar

Science.gov (United States)

Long, Teng; Zhang, Honggang; Zeng, Tao; Chen, Xinliang; Liu, Quanhua; Zheng, Le

2016-01-01

Distributed array radar can improve radar detection capability and measurement accuracy. However, it will suffer cyclic ambiguity in its angle estimates according to the spatial Nyquist sampling theorem since the large sparse array is undersampling. Consequently, the state estimation accuracy and track validity probability degrades when the ambiguous angles are directly used for target tracking. This paper proposes a second probability data association filter (SePDAF)-based tracking method for distributed array radar. Firstly, the target motion model and radar measurement model is built. Secondly, the fusion result of each radar’s estimation is employed to the extended Kalman filter (EKF) to finish the first filtering. Thirdly, taking this result as prior knowledge, and associating with the array-processed ambiguous angles, the SePDAF is applied to accomplish the second filtering, and then achieving a high accuracy and stable trajectory with relatively low computational complexity. Moreover, the azimuth filtering accuracy will be promoted dramatically and the position filtering accuracy will also improve. Finally, simulations illustrate the effectiveness of the proposed method. PMID:27618058

The Effect of Glancing Angle Deposition Conditions on the Morphology of a Silver Nanohelix Array

Directory of Open Access Journals (Sweden)

Yi-Jun Jen

2017-09-01

Full Text Available Silver nanohelices were grown on smooth substrates using glancing angle deposition and substrate cooling. Various nanohelix arrays were deposited under different deposition conditions—different deposition rates, substrate spin rates, deposition angles, and substrate temperatures. The effect of deposition conditions on the morphology of each nanohelix array in terms of pitch angle, pitch length, wire diameter, and radius of curvature was investigated. The dependence of circular dichroism on the size of the nanohelix arrays was also measured and demonstrated.

Angle resolved characterization of nanostructured and conventionally textured silicon solar cells

DEFF Research Database (Denmark)

Davidsen, Rasmus Schmidt; Ormstrup, Jeppe; Ommen, Martin Lind

2015-01-01

current, open circuit voltage, fill factor (FF) and power conversion efficiency are each measured as function of the relative incident angle between the solar cell and the light source. The relative incident angle is varied from 0° to 90° in steps of 10° in orthogonal axes, such that each solar cell......We report angle resolved characterization of nanostructured and conventionally textured silicon solar cells. The nanostructured solar cells are realized through a single step, mask-less, scalable reactive ion etching (RIE) texturing of the surface. Photovoltaic properties including short circuit...

Formation of a silicon micropore array of a two-dimension electron multiplier by photo electrochemical etching

International Nuclear Information System (INIS)

Gao Yanjun; Duanmu Qingduo; Wang Guozheng; Li Ye; Tian Jingquan

2009-01-01

A semiconductor PEC etching method is applied to fabricate the n-type silicon deep micropore channel array. In this method, it is important to arrange the direction of the micropore array along the crystal orientation of the Si substrate. Otherwise, serious lateral erosion will happen. The etching process is also relative to the light intensity and HF concentration. 5% HF concentration and 10-15 cm distance between the light source and the silicon wafer are demonstrated to be the best in our experiments. The n-type silicon deep micropore channel array with aperture of 3 μm and aspect ratio of 40-60, whose inner walls are smooth, is finally obtained.

The oxidized porous silicon field emission array

International Nuclear Information System (INIS)

Smith, D.D.; Demroff, H.P.; Elliott, T.S.; Kasprowicz, T.B.; Lee, B.; Mazumdar, T.K.; McIntyre, P.M.; Pang, Y.; Trost, H.J.

1993-01-01

The goal of developing a highly efficient microwave power source has led the authors to investigate new methods of electron field emission. One method presently under consideration involves the use of oxidized porous silicon thin films. The authors have used this technology to fabricate the first working field emission arrays from this substance. This approach reduces the diameter of an individual emitter to the nanometer scale. Tests of the first samples are encouraging, with extracted electron currents to nearly 1 mA resulting from less than 20 V of pulsed DC gate voltage. Modulated emission at 5 MHz was also observed. Developments of a full-scale emission array capable of delivering an electron beam at 18 GHz of minimum density 100 A/cm 2 is in progress

Large-area 2D periodic crystalline silicon nanodome arrays on nanoimprinted glass exhibiting photonic band structure effects

International Nuclear Information System (INIS)

Becker, C; Lockau, D; Sontheimer, T; Rech, B; Schubert-Bischoff, P; Rudigier-Voigt, E; Bockmeyer, M; Schmidt, F

2012-01-01

Two-dimensional silicon nanodome arrays are prepared on large areas up to 50 cm 2 exhibiting photonic band structure effects in the near-infrared and visible wavelength region by downscaling a recently developed fabrication method based on nanoimprint-patterned glass, high-rate electron-beam evaporation of silicon, self-organized solid phase crystallization and wet-chemical etching. The silicon nanodomes, arranged in square lattice geometry with 300 nm lattice constant, are optically characterized by angular resolved reflection measurements, allowing the partial determination of the photonic band structure. This experimentally determined band structure agrees well with the outcome of three-dimensional optical finite-element simulations. A 16% photonic bandgap is predicted for an optimized geometry of the silicon nanodome arrays. By variation of the duration of the selective etching step, the geometry as well as the optical properties of the periodic silicon nanodome arrays can be controlled systematically. (paper)

Surface Plasmon Enhanced Light Trapping in Metal/Silicon Nanobowl Arrays for Thin Film Photovoltaics

Directory of Open Access Journals (Sweden)

Ruinan Sun

2017-01-01

Full Text Available Enhancing the light absorption in thin film silicon solar cells with nanophotonic and plasmonic structures is important for the realization of high efficiency solar cells with significant cost reduction. In this work, we investigate periodic arrays of conformal metal/silicon nanobowl arrays (MSNBs for light trapping applications in silicon solar cells. They exhibited excellent light-harvesting ability across a wide range of wavelengths up to infrared regimes. The optimized structure (MSNBsH covered by SiO2 passivation layer and hemisphere Ag back reflection layer has a maximal short-circuit density (Jsc 25.5 mA/cm2, which is about 88.8% higher than flat structure counterpart, and the light-conversion efficiency (η is increased two times from 6.3% to 12.6%. The double-side textures offer a promising approach to high efficiency ultrathin silicon solar cells.

Laser desorption ionization and peptide sequencing on laser induced silicon microcolumn arrays

Science.gov (United States)

Vertes, Akos [Reston, VA; Chen, Yong [San Diego, CA

2011-12-27

The present invention provides a method of producing a laser-patterned silicon surface, especially silicon wafers for use in laser desorption ionization (LDI-MS) (including MALDI-MS and SELDI-MS), devices containing the same, and methods of testing samples employing the same. The surface is prepared by subjecting a silicon substrate to multiple laser shots from a high-power picosecond or femtosecond laser while in a processing environment, e.g., underwater, and generates a remarkable homogenous microcolumn array capable of providing an improved substrate for LDI-MS.

Simple, Fast, and Cost-Effective Fabrication of Wafer-Scale Nanohole Arrays on Silicon for Antireflection

Directory of Open Access Journals (Sweden)

Di Di

2014-01-01

Full Text Available A simple, fast, and cost-effective method was developed in this paper for the high-throughput fabrication of nanohole arrays on silicon (Si, which is utilized for antireflection. Wafer-scale polystyrene (PS monolayer colloidal crystal was developed as templates by spin-coating method. Metallic shadow mask was prepared by lifting off the oxygen etched PS beads from the deposited chromium film. Nanohole arrays were fabricated by Si dry etching. A series of nanohole arrays were fabricated with the similar diameter but with different depth. It is found that the maximum depth of the Si-hole was determined by the diameter of the Cr-mask. The antireflection ability of these Si-hole arrays was investigated. The results show that the reflection decreases with the depth of the Si-hole. The deepest Si-hole arrays show the best antireflection ability (reflection 600 nm, which was about 28 percent of the nonpatterned silicon wafer’s reflection. The proposed method has the potential for high-throughput fabrication of patterned Si wafer, and the low reflectivity allows the application of these wafers in crystalline silicon solar cells.

Diamagneto-Dielectric Anisotropic Wide Angle Impedance Matching Layers for Active Phased Arrays

NARCIS (Netherlands)

Silvestri, F.; Cifola, L.; Gerini, G.

2016-01-01

In this paper, we present the full process of designing anisotropic metamaterial (MM) wide angle impedance matching (WAIM) layers. These layers are used to reduce the scan losses that occur in active phased arrays for large scanning angles. Numerical results are provided to show the improvement in

Diamagneto-dielectric anisotropic wide angle impedance matching layers for active phased arrays

NARCIS (Netherlands)

Silvestri, F.; Cifola, L.; Gerini, G.

2016-01-01

In this paper we present the full process of designing anisotropic metamaterial (MM) wide angle impedance matching (WAIM) layers. These layers are used to reduce the scan losses that occur in active phased arrays for large scanning angles. Numerical results are provided to show the improvement in

Materials preparation and fabrication of pyroelectric polymer/silicon MOSFET detector arrays. Final report

International Nuclear Information System (INIS)

Bloomfield, P.

1992-01-01

The authors have delivered several 64-element linear arrays of pyroelectric elements fully integrated on silicon wafers with MOS readout devices. They have delivered detailed drawings of the linear arrays to LANL. They have processed a series of two inch wafers per submitted design. Each two inch wafer contains two 64 element arrays. After spin-coating copolymer onto the arrays, vacuum depositing the top electrodes, and polarizing the copolymer films so as to make them pyroelectrically active, each wafer was split in half. The authors developed a thicker oxide coating separating the extended gate electrode (beneath the polymer detector) from the silicon. This should reduce its parasitic capacitance and hence improve the S/N. They provided LANL three processed 64 element sensor arrays. Each array was affixed to a connector panel and selected solder pads of the common ground, the common source voltage supply connections, the 64 individual drain connections, and the 64 drain connections (for direct pyroelectric sensing response rather than the MOSFET action) were wire bonded to the connector panel solder pads. This entails (64 + 64 + 1 + 1) = 130 possible bond connections per 64 element array. This report now details the processing steps and the progress of the individual wafers as they were carried through from beginning to end

The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots

Science.gov (United States)

Yoo, Hana; Park, Soojin

2010-06-01

We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm × 5 cm.

The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots

Energy Technology Data Exchange (ETDEWEB)

Yoo, Hana; Park, Soojin, E-mail: spark@unist.ac.kr [Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology, Banyeon-ri 100, Ulsan 689-798 (Korea, Republic of)

2010-06-18

We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm x 5 cm.

Detailed statistical contact angle analyses; "slow moving" drops on inclining silicon-oxide surfaces.

Science.gov (United States)

Schmitt, M; Groß, K; Grub, J; Heib, F

2015-06-01

Contact angle determination by sessile drop technique is essential to characterise surface properties in science and in industry. Different specific angles can be observed on every solid which are correlated with the advancing or the receding of the triple line. Different procedures and definitions for the determination of specific angles exist which are often not comprehensible or reproducible. Therefore one of the most important things in this area is to build standard, reproducible and valid methods for determining advancing/receding contact angles. This contribution introduces novel techniques to analyse dynamic contact angle measurements (sessile drop) in detail which are applicable for axisymmetric and non-axisymmetric drops. Not only the recently presented fit solution by sigmoid function and the independent analysis of the different parameters (inclination, contact angle, velocity of the triple point) but also the dependent analysis will be firstly explained in detail. These approaches lead to contact angle data and different access on specific contact angles which are independent from "user-skills" and subjectivity of the operator. As example the motion behaviour of droplets on flat silicon-oxide surfaces after different surface treatments is dynamically measured by sessile drop technique when inclining the sample plate. The triple points, the inclination angles, the downhill (advancing motion) and the uphill angles (receding motion) obtained by high-precision drop shape analysis are independently and dependently statistically analysed. Due to the small covered distance for the dependent analysis (contact angle determination. They are characterised by small deviations of the computed values. Additional to the detailed introduction of this novel analytical approaches plus fit solution special motion relations for the drop on inclined surfaces and detailed relations about the reactivity of the freshly cleaned silicon wafer surface resulting in acceleration

Formation of array microstructures on silicon by multibeam interfered femtosecond laser pulses

International Nuclear Information System (INIS)

Zhao Quanzhong; Qiu Jianrong; Zhao Chongjun; Jiang Xiongwei; Zhu Congshan

2005-01-01

We report on an optical interference method to fabricate array microstructures on the surface of silicon wafers by means of five-beam interference of femtosecond laser pulses. Optical microscope and scanning electron microscope observations revealed microstructures with micrometer-order were fabricated. The diffraction characteristics of the fabricated structures were evaluated. The present technique allows one-step realization of functional optoelectronic devices on silicon surface

Investigation into the surface of implanted monocrystalline silicon with the aid of wetting angle

International Nuclear Information System (INIS)

Lebedeva, N.N.; Bakovets, V.V.; Sedymova, E.A.; Pridachin, N.B.

1986-01-01

The dependence of silicon wetting margical angle on its irradiation dose by ions of electrically active and neutral materials is studied. It has been found that the system of immiscible liquids - ether and water can be successfully used for studying the silicon ion implantation effect on its water wetting. Changing of implanted silicon wetting is bound up with the increase of the defects presence level of surface layers. The specimens annealing reestablishes silicon wetting up to parameters characteristic of non irradiated specimens. The most effective annealing region is within the 550-700 deg C range. The implanted silicon wetting by melts at increased temperatures can be employed for studying kinetics and defect annealing mechanism

Nanoscale phosphorus atom arrays created using STM for the fabrication of a silicon based quantum computer.

Energy Technology Data Exchange (ETDEWEB)

O' Brien, J. L. (Jeremy L.); Schofield, S. R. (Steven R.); Simmons, M. Y. (Michelle Y.); Clark, R. G. (Robert G.); Dzurak, A. S. (Andrew S.); Curson, N. J. (Neil J.); Kane, B. E. (Bruce E.); McAlpine, N. S. (Neal S.); Hawley, M. E. (Marilyn E.); Brown, G. W. (Geoffrey W.)

2001-01-01

Quantum computers offer the promise of formidable computational power for certain tasks. Of the various possible physical implementations of such a device, silicon based architectures are attractive for their scalability and ease of integration with existing silicon technology. These designs use either the electron or nuclear spin state of single donor atoms to store quantum information. Here we describe a strategy to fabricate an array of single phosphorus atoms in silicon for the construction of such a silicon based quantum computer. We demonstrate the controlled placement of single phosphorus bearing molecules on a silicon surface. This has been achieved by patterning a hydrogen mono-layer 'resist' with a scanning tunneling microscope (STM) tip and exposing the patterned surface to phosphine (PH3) molecules. We also describe preliminary studies into a process to incorporate these surface phosphorus atoms into the silicon crystal at the array sites. Keywords: Quantum computing, nanotechriology scanning turincling microscopy, hydrogen lithography

Angle-independent structural colors of silicon

DEFF Research Database (Denmark)

Højlund-Nielsen, Emil; Weirich, Johannes; Nørregaard, Jesper

2014-01-01

Structural colors are optical phenomena of physical origin, where microscale and nanoscale structures determine the reflected spectrum of light. Artificial structural colors have been realized within recent years. However, multilayer structures require substantial fabrication. Instead we considered...... one-layer surface textures of silicon.We explored four patterns of square structures in a square lattice with periods of 500, 400, 300, and 200 nm. The reflectivity and daylight-colors were measured and compared with simulations based on rigorously coupledwave analysis with excellent agreement. Based...... on the 200-nm periodic pattern, it was found that angle-independent specular colors up to 60 deg of incidence may be provided. The underlying mechanisms include (1) the suppression of diffraction and (2) a strong coupling of light to localized surface states. The strong coupling yields absorption anomalies...

A method of incident angle estimation for high resolution spectral recovery in filter-array-based spectrometers

Science.gov (United States)

Kim, Cheolsun; Lee, Woong-Bi; Ju, Gun Wu; Cho, Jeonghoon; Kim, Seongmin; Oh, Jinkyung; Lim, Dongsung; Lee, Yong Tak; Lee, Heung-No

2017-02-01

In recent years, there has been an increasing interest in miniature spectrometers for research and development. Especially, filter-array-based spectrometers have advantages of low cost and portability, and can be applied in various fields such as biology, chemistry and food industry. Miniaturization in optical filters causes degradation of spectral resolution due to limitations on spectral responses and the number of filters. Nowadays, many studies have been reported that the filter-array-based spectrometers have achieved resolution improvements by using digital signal processing (DSP) techniques. The performance of the DSP-based spectral recovery highly depends on the prior information of transmission functions (TFs) of the filters. The TFs vary with respect to an incident angle of light onto the filter-array. Conventionally, it is assumed that the incident angle of light on the filters is fixed and the TFs are known to the DSP. However, the incident angle is inconstant according to various environments and applications, and thus TFs also vary, which leads to performance degradation of spectral recovery. In this paper, we propose a method of incident angle estimation (IAE) for high resolution spectral recovery in the filter-array-based spectrometers. By exploiting sparse signal reconstruction of the L1- norm minimization, IAE estimates an incident angle among all possible incident angles which minimizes the error of the reconstructed signal. Based on IAE, DSP effectively provides a high resolution spectral recovery in the filter-array-based spectrometers.

Copper nanorod array assisted silicon waveguide polarization beam splitter.

Science.gov (United States)

Kim, Sangsik; Qi, Minghao

2014-04-21

We present the design of a three-dimensional (3D) polarization beam splitter (PBS) with a copper nanorod array placed between two silicon waveguides. The localized surface plasmon resonance (LSPR) of a metal nanorod array selectively cross-couples transverse electric (TE) mode to the coupler waveguide, while transverse magnetic (TM) mode passes through the original input waveguide without coupling. An ultra-compact and broadband PBS compared to all-dielectric devices is achieved with the LSPR. The output ports of waveguides are designed to support either TM or TE mode only to enhance the extinction ratios. Compared to silver, copper is fully compatible with complementary metal-oxide-semiconductor (CMOS) technology.

Characterization of electronic structures from CdS/Si nanoheterostructure array based on silicon nanoporous pillar array

Energy Technology Data Exchange (ETDEWEB)

Li, Yong, E-mail: liyong@pdsu.edu.cn [Department of Physics and Solar Energy Research Center, Pingdingshan University, Pingdingshan 467000 (China); Song, Xiao Yan [Department of Mathematics and Information Science, North China University of Water Resources and Electric Power, Zhengzhou 450045 (China); Song, Yue Li; Ji, Peng Fei; Zhou, Feng Qun; Tian, Ming Li; Huang, Hong Chun [Department of Physics and Solar Energy Research Center, Pingdingshan University, Pingdingshan 467000 (China); Li, Xin Jian [Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

2016-02-15

Highlights: • CdS/Si nanoheterostructure array has been fabricated through a CBD method. • The electronic properties have been investigated by the I–V and C–V techniques. • The onset voltages, characteristic frequency and built-in potential are investigated. • The electronic structures can be tuned through the annealing treatments. - Abstract: The electronic properties of heterostructures are very important to its applications in the field of optoelectronic devices. Understanding and control of electronic properties are very necessary. CdS/Si nanoheterostructure array have been fabricated through growing CdS nanocrystals on the silicon nanoporous pillar array using a chemical bath deposition method. The electronic properties of CdS nanoheterostructure array have been investigated by the current–voltage, complex impedance spectroscopy and capacitance–voltage techniques. The onset voltages, characteristic frequency and built-in potential are gradually increased with increasing the annealing temperature. It is indicated that the electronic structures of CdS/Si nanoheterostructure array can be tuned through the annealing treatments.

Characterization of electronic structures from CdS/Si nanoheterostructure array based on silicon nanoporous pillar array

International Nuclear Information System (INIS)

Li, Yong; Song, Xiao Yan; Song, Yue Li; Ji, Peng Fei; Zhou, Feng Qun; Tian, Ming Li; Huang, Hong Chun; Li, Xin Jian

2016-01-01

Highlights: • CdS/Si nanoheterostructure array has been fabricated through a CBD method. • The electronic properties have been investigated by the I–V and C–V techniques. • The onset voltages, characteristic frequency and built-in potential are investigated. • The electronic structures can be tuned through the annealing treatments. - Abstract: The electronic properties of heterostructures are very important to its applications in the field of optoelectronic devices. Understanding and control of electronic properties are very necessary. CdS/Si nanoheterostructure array have been fabricated through growing CdS nanocrystals on the silicon nanoporous pillar array using a chemical bath deposition method. The electronic properties of CdS nanoheterostructure array have been investigated by the current–voltage, complex impedance spectroscopy and capacitance–voltage techniques. The onset voltages, characteristic frequency and built-in potential are gradually increased with increasing the annealing temperature. It is indicated that the electronic structures of CdS/Si nanoheterostructure array can be tuned through the annealing treatments.

Micromachined silicon parallel acoustic delay lines as time-delayed ultrasound detector array for real-time photoacoustic tomography

Science.gov (United States)

Cho, Y.; Chang, C.-C.; Wang, L. V.; Zou, J.

2016-02-01

This paper reports the development of a new 16-channel parallel acoustic delay line (PADL) array for real-time photoacoustic tomography (PAT). The PADLs were directly fabricated from single-crystalline silicon substrates using deep reactive ion etching. Compared with other acoustic delay lines (e.g., optical fibers), the micromachined silicon PADLs offer higher acoustic transmission efficiency, smaller form factor, easier assembly, and mass production capability. To demonstrate its real-time photoacoustic imaging capability, the silicon PADL array was interfaced with one single-element ultrasonic transducer followed by one channel of data acquisition electronics to receive 16 channels of photoacoustic signals simultaneously. A PAT image of an optically-absorbing target embedded in an optically-scattering phantom was reconstructed, which matched well with the actual size of the imaged target. Because the silicon PADL array allows a signal-to-channel reduction ratio of 16:1, it could significantly simplify the design and construction of ultrasonic receivers for real-time PAT.

Micromachined silicon parallel acoustic delay lines as time-delayed ultrasound detector array for real-time photoacoustic tomography

International Nuclear Information System (INIS)

Cho, Y; Chang, C-C; Zou, J; Wang, L V

2016-01-01

This paper reports the development of a new 16-channel parallel acoustic delay line (PADL) array for real-time photoacoustic tomography (PAT). The PADLs were directly fabricated from single-crystalline silicon substrates using deep reactive ion etching. Compared with other acoustic delay lines (e.g., optical fibers), the micromachined silicon PADLs offer higher acoustic transmission efficiency, smaller form factor, easier assembly, and mass production capability. To demonstrate its real-time photoacoustic imaging capability, the silicon PADL array was interfaced with one single-element ultrasonic transducer followed by one channel of data acquisition electronics to receive 16 channels of photoacoustic signals simultaneously. A PAT image of an optically-absorbing target embedded in an optically-scattering phantom was reconstructed, which matched well with the actual size of the imaged target. Because the silicon PADL array allows a signal-to-channel reduction ratio of 16:1, it could significantly simplify the design and construction of ultrasonic receivers for real-time PAT. (paper)

High luminosity operation of large solid angle scintillator arrays in Jefferson Lab Hall A

International Nuclear Information System (INIS)

Ran Shneor

2003-01-01

This thesis describes selected aspects of high luminosity operation of large solid angle scintillator arrays in Hall A of the CEBAF (Central Electron Beam Accelerator Facility) at TJNAF (Thomas Jefferson National Accelerator Facility ). CEBAF is a high current, high duty factor electron accelerator with a maximum beam energy of about 6 GeV and a maximum current of 200 (micro)A. Operating large solid angle scintillator arrays in high luminosity environment presents several problems such as high singles rates, low signal to noise ratios and shielding requirements. To demonstrate the need for large solid angle and momentum acceptance detectors as a third arm in Hall A, we will give a brief overview of the physics motivating five approved experiments, which utilize scintillator arrays. We will then focus on the design and assembly of these scintillator arrays, with special focus on the two new detector packages built for the Short Range Correlation experiment E01-015. This thesis also contains the description and results of different tests and calibrations which where conducted for these arrays. We also present the description of a number of tests which were done in order to estimate the singles rates, data reconstruction, filtering techniques and shielding required for these counters

Flat-plate solar array project. Volume 3: Silicon sheet: Wafers and ribbons

Science.gov (United States)

Briglio, A.; Dumas, K.; Leipold, M.; Morrison, A.

1986-01-01

The primary objective of the Silicon Sheet Task of the Flat-Plate Solar Array (FSA) Project was the development of one or more low cost technologies for producing silicon sheet suitable for processing into cost-competitive solar cells. Silicon sheet refers to high purity crystalline silicon of size and thickness for fabrication into solar cells. Areas covered in the project were ingot growth and casting, wafering, ribbon growth, and other sheet technologies. The task made and fostered significant improvements in silicon sheet including processing of both ingot and ribbon technologies. An additional important outcome was the vastly improved understanding of the characteristics associated with high quality sheet, and the control of the parameters required for higher efficiency solar cells. Although significant sheet cost reductions were made, the technology advancements required to meet the task cost goals were not achieved.

Nuclear resonant scattering measurements on (57)Fe by multichannel scaling with a 64-pixel silicon avalanche photodiode linear-array detector.

Science.gov (United States)

Kishimoto, S; Mitsui, T; Haruki, R; Yoda, Y; Taniguchi, T; Shimazaki, S; Ikeno, M; Saito, M; Tanaka, M

2014-11-01

We developed a silicon avalanche photodiode (Si-APD) linear-array detector for use in nuclear resonant scattering experiments using synchrotron X-rays. The Si-APD linear array consists of 64 pixels (pixel size: 100 × 200 μm(2)) with a pixel pitch of 150 μm and depletion depth of 10 μm. An ultrafast frontend circuit allows the X-ray detector to obtain a high output rate of >10(7) cps per pixel. High-performance integrated circuits achieve multichannel scaling over 1024 continuous time bins with a 1 ns resolution for each pixel without dead time. The multichannel scaling method enabled us to record a time spectrum of the 14.4 keV nuclear radiation at each pixel with a time resolution of 1.4 ns (FWHM). This method was successfully applied to nuclear forward scattering and nuclear small-angle scattering on (57)Fe.

Thin resolver using the easy magnetization axis of the grain-oriented silicon steel as an angle indicator

Directory of Open Access Journals (Sweden)

Jisho Oshino

2017-05-01

Full Text Available A new type of thin resolver is presented, in which the easy axis of the magnetic anisotropy in the grain-oriented silicon steel is used as an angle indicator. The total thickness including a rotor, PCB coils and a back yoke can be made less than 4 mm. With a rotor of 50 mm diameter, a good linear response (non-linearity error < 0.4% between the mechanical angle input and the electrical angle output has been obtained. The influence of a weak magnetic anisotropy in the non-grain-oriented silicon steel used for the back yoke on the accuracy of the resolver can be deleted by the method proposed in this paper.

A Method to Estimate Local Towed Array Angles Using Flush Mounted Hot Film Wall Shear Sensors

National Research Council Canada - National Science Library

Keith, William L; Cipolla, Kimberly M

2008-01-01

A towed array is provided with hot-film sensors and anemometer circuitry to calculate the angle of inclination of the towed array in real time during deployment of the towed array in a sea water environment...

Effects of pillar height and junction depth on the performance of radially doped silicon pillar arrays for solar energy applications

NARCIS (Netherlands)

Elbersen, R.; Vijselaar, Wouter Jan, Cornelis; Tiggelaar, Roald M.; Gardeniers, Johannes G.E.; Huskens, Jurriaan

2016-01-01

The effects of pillar height and junction depth on solar cell characteristics are investigated to provide design rules for arrays of such pillars in solar energy applications. Radially doped silicon pillar arrays are fabricated by deep reactive ion etching of silicon substrates followed by the

Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K

International Nuclear Information System (INIS)

Bartsch, V.; Boer, W. de; Bol, J.

2001-01-01

Future experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures below 180 K. However, at low temperatures the mobility increases, which leads to larger deflections of the charge carriers by the Lorentz force. We present measurements of the Lorentz angle between 77 K and 300 K before and after irradiation with a primary beam of 21 MeV protons to a flux of 10 13 /cm 2 . (author)

Reflectivity quenching of ESR multilayer polymer film reflector in optically bonded scintillator arrays

Science.gov (United States)

Loignon-Houle, Francis; Pepin, Catherine M.; Charlebois, Serge A.; Lecomte, Roger

2017-04-01

The 3M-ESR multilayer polymer film is a widely used reflector in scintillation detector arrays. As specified in the datasheet and confirmed experimentally by measurements in air, it is highly reflective (> 98 %) over the entire visible spectrum (400-1000 nm) for all angles of incidence. Despite these outstanding characteristics, it was previously found that light crosstalk between pixels in a bonded LYSO scintillator array with ESR reflector can be as high as ∼30-35%. This unexplained light crosstalk motivated further investigation of ESR optical performance. Analytical simulation of a multilayer structure emulating the ESR reflector showed that the film becomes highly transparent to incident light at large angles when surrounded on both sides by materials of refractive index higher than air. Monte Carlo simulations indicate that a considerable fraction (∼25-35%) of scintillation photons are incident at these leaking angles in high aspect ratio LYSO scintillation crystals. The film transparency was investigated experimentally by measuring the scintillation light transmission through the ESR film sandwiched between a scintillation crystal and a photodetector with or without layers of silicone grease. Strong light leakage, up to nearly 30%, was measured through the reflector when coated on both sides with silicone, thus elucidating the major cause of light crosstalk in bonded arrays. The reflector transparency was confirmed experimentally for angles of incidence larger than 60 ° using a custom designed setup allowing illumination of the bonded ESR film at selected grazing angles. The unsuspected ESR film transparency can be beneficial for detector arrays exploiting light sharing schemes, but it is highly detrimental for scintillator arrays designed for individual pixel readout.

Silicon photonics fiber-to-the-home transceiver array based on transfer-printing-based integration of III-V photodetectors.

Science.gov (United States)

Zhang, Jing; De Groote, Andreas; Abbasi, Amin; Loi, Ruggero; O'Callaghan, James; Corbett, Brian; Trindade, António José; Bower, Christopher A; Roelkens, Gunther

2017-06-26

A 4-channel silicon photonics transceiver array for Point-to-Point (P2P) fiber-to-the-home (FTTH) optical networks at the central office (CO) side is demonstrated. A III-V O-band photodetector array was integrated onto the silicon photonic transmitter through transfer printing technology, showing a polarization-independent responsivity of 0.39 - 0.49 A/W in the O-band. The integrated PDs (30 × 40 μm 2 mesa) have a 3 dB bandwidth of 11.5 GHz at -3 V bias. Together with high-speed C-band silicon ring modulators whose bandwidth is up to 15 GHz, operation of the transceiver array at 10 Gbit/s is demonstrated. The use of transfer printing for the integration of the III-V photodetectors allows for an efficient use of III-V material and enables the scalable integration of III-V devices on silicon photonics wafers, thereby reducing their cost.

Infrared LED Array For Silicon Strip Detector Qualification

CERN Document Server

Dirkes, Guido; Hartmann, Frank; Heier, Stefan; Schwerdtfeger, Wolfgang; Waldschmitt, M; Weiler, K W; Weseler, Siegfried

2003-01-01

The enormous amount of silicon strip detector modules for the CMS tracker requires a test-sytem to allow qualification of each individual detector module and its front-end electronics within minutes. The objective is to test the detector with a physical signal. Signals are generated in the detector by illumination with lightpulses emitted by a LED at 950~nm and with a rise time of 10~ns. In order to avoid a detector moving, an array of 64 LEDs is used, overlaping the complete detector width. The total length of an array is 15~cm. The spot size of an individual LED is controlled by apertures to illuminate about 25 strips. Furthermore it is possible to simulate the high leakage current of irradiated sensors by constant illumination of the sensor. This provides an effective mean to identfy pinholes on a sensor.

Effects of carbon nanotube arrays on nucleate pool boiling

OpenAIRE

Ujereh, Sebastine; Fisher, Timothy; Mudawar, Issam

2007-01-01

Experiments were performed to assess the impact coating silicon and copper substrates with nanotubes (CNTs) have on pool boiling performance. Different CNT array densities and area coverages were tested on 1.27 1.27 mm2 samples in FC-72. The CNT preparation techniques used provided strong adherence of CNTs to both substrate materials. Very small contact angle enabled deep penetration of FC-72 liquid inside surface cavities of smooth uncoated silicon surfaces, requiring unusually high surface...

Bilayer–metal assisted chemical etching of silicon microwire arrays for photovoltaic applications

Directory of Open Access Journals (Sweden)

R. W. Wu

2016-02-01

Full Text Available Silicon microwires with lateral dimension from 5 μm to 20 μm and depth as long as 20 μm are prepared by bilayer metal assisted chemical etching (MaCE. A bilayer metal configuration (Metal 1 / Metal 2 was applied to assist etching of Si where metal 1 acts as direct catalyst and metal 2 provides mechanical support. Different metal types were investigated to figure out the influence of metal catalyst on morphology of etched silicon. We find that silicon microwires with vertical side wall are produced when we use Ag/Au bilayer, while cone–like and porous microwires formed when Pt/Au is applied. The different micro-/nano-structures in as-etched silicon are demonstrated to be due to the discrepancy of work function of metal catalyst relative to Si. Further, we constructed a silicon microwire arrays solar cells in a radial p–n junction configurations in a screen printed aluminum paste p–doping process.

Dual-side and three-dimensional microelectrode arrays fabricated from ultra-thin silicon substrates

International Nuclear Information System (INIS)

Du, Jiangang; Masmanidis, Sotiris C; Roukes, Michael L

2009-01-01

A method for fabricating planar implantable microelectrode arrays was demonstrated using a process that relied on ultra-thin silicon substrates, which ranged in thickness from 25 to 50 µm. The challenge of handling these fragile materials was met via a temporary substrate support mechanism. In order to compensate for putative electrical shielding of extracellular neuronal fields, separately addressable electrode arrays were defined on each side of the silicon device. Deep reactive ion etching was employed to create sharp implantable shafts with lengths of up to 5 mm. The devices were flip-chip bonded onto printed circuit boards (PCBs) by means of an anisotropic conductive adhesive film. This scalable assembly technique enabled three-dimensional (3D) integration through formation of stacks of multiple silicon and PCB layers. Simulations and measurements of microelectrode noise appear to suggest that low impedance surfaces, which could be formed by electrodeposition of gold or other materials, are required to ensure an optimal signal-to-noise ratio as well a low level of interchannel crosstalk

Small-angle tomography algorithm for transmission inspection of acoustic linear array

Directory of Open Access Journals (Sweden)

Soldatov Alexey

2016-01-01

Full Text Available The paper describes the algorithm of reconstruction of tomographic image used in the through-transition method in a small angle sounding of acoustic linear arrays and the results of practical application of the proposed algorithm. In alternate probing of each element of emitting array and simultaneous reception of all elements of the receiving array is a collection of shadow images of the testing zone. The testing zone is divided into small local areas and using the collection of shadow images computed matrix normalized transmission coefficients for each of the small local area. Tomographic image control zone is obtained by submitting the resulting matrix of normalized transmission coefficients in grayscale or colors.

Silicon nanowire arrays as learning chemical vapour classifiers

International Nuclear Information System (INIS)

Niskanen, A O; Colli, A; White, R; Li, H W; Spigone, E; Kivioja, J M

2011-01-01

Nanowire field-effect transistors are a promising class of devices for various sensing applications. Apart from detecting individual chemical or biological analytes, it is especially interesting to use multiple selective sensors to look at their collective response in order to perform classification into predetermined categories. We show that non-functionalised silicon nanowire arrays can be used to robustly classify different chemical vapours using simple statistical machine learning methods. We were able to distinguish between acetone, ethanol and water with 100% accuracy while methanol, ethanol and 2-propanol were classified with 96% accuracy in ambient conditions.

Surface potential on gold nanodisc arrays fabricated on silicon under light irradiation

Science.gov (United States)

Ezaki, Tomotarou; Matsutani, Akihiro; Nishioka, Kunio; Shoji, Dai; Sato, Mina; Okamoto, Takayuki; Isobe, Toshihiro; Nakajima, Akira; Matsushita, Sachiko

2018-06-01

This paper proposes Kelvin probe force microscopy (KFM) as a new measurement method of plasmon phenomenon. The surface potential of two arrays, namely, a monomeric array and a tetrameric array, of gold nanodiscs (600 nm diameter) on a silicon substrate fabricated by electron beam lithography was investigated by KFM with the view point of irradiation light wavelength change. In terms of the value of the surface potential, contrasting behaviour, a negative shift in the monomeric disc array and a positive shift in the tetrameric disc array, was observed by light irradiation. This interesting behaviour is thought to be related to a difference in localised plasmons caused by the disc arrangement and was investigated from various viewpoints, including Rayleigh anomalies. Finally, this paper reveals that KFM is powerful not only to investigate the plasmonic behaviour but also to predict the electron transportation.

A study of angle dependent surface plasmon polaritons in nano-hole array structures

Energy Technology Data Exchange (ETDEWEB)

Balakrishnan, Shankar [Department of Physics and Astronomy, University of Western Ontario, London, Ontario N6A 3K7 (Canada); Lawson Health Research Institute, St. Joseph' s Health Care, London, Ontario N6A 4V2 (Canada); Najiminaini, Mohamadreza; Carson, Jeffrey J. L. [Lawson Health Research Institute, St. Joseph' s Health Care, London, Ontario N6A 4V2 (Canada); Department of Medical Biophysics, University of Western Ontario, London, Ontario N6A 3K7 (Canada); Singh, Mahi R. [Department of Physics and Astronomy, University of Western Ontario, London, Ontario N6A 3K7 (Canada)

2016-07-21

We report that the light-matter interaction in metallic nano-hole array structures possess a subwavelength hole radius and periodicity. The transmission coefficient for nano-hole array structures was measured for different angles of incidence of light. Each measured transmission spectrum had several peaks due to surface plasmon polaritons. A theory of the transmission coefficient was developed based on the quantum density matrix method. It was found that the location of the surface plasmon polariton and the heights of the spectral peaks were dependent on the angle of incidence of light. Good agreement was observed between the experimental and theoretical results. This property of these structures has opened up new possibilities for sensing applications.

Topological investigation of electronic silicon nanoparticulate aggregates using ultra-small-angle X-ray scattering

CSIR Research Space (South Africa)

Jonah, EO

2012-10-01

Full Text Available The network topology of two types of silicon nanoparticles, produced by high energy milling and pyrolysis of silane, in layers deposited from inks on permeable and impermeable substrates has been quantitatively characterized using ultra-small-angle...

Synthesis, structure and photoelectrochemical properties of single crystalline silicon nanowire arrays

International Nuclear Information System (INIS)

Dalchiele, E.A.; Martin, F.; Leinen, D.; Marotti, R.E.; Ramos-Barrado, J.R.

2010-01-01

In the present work, n-type silicon nanowire (n-SiNW) arrays have been synthesized by self-assembly electroless metal deposition (EMD) nanoelectrochemistry. The synthesized n-SiNW arrays have been submitted to scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and optical studies. Initial probes of the solar device conversion properties and the photovoltaic parameters such as short-circuit current, open-circuit potential, and fill factor of the n-SiNW arrays have been explored using a liquid-junction in a photoelectrochemical (PEC) system under white light. Moreover, a direct comparison between the PEC performance of a polished n-Si(100) and the synthesized n-SiNW array photoelectrodes has been done. The PEC performance was significantly enhanced on the n-SiNWs photoelectrodes compared with that on polished n-Si(100).

Corporate array of micromachined dipoles on silicon wafer for 60 GHz communication systems

KAUST Repository

Sallam, M. O.

2013-03-01

In this paper, an antenna array operating at 60 GHz and realized on 0.675 mm thick silicon substrate is presented. The array is constructed using four micromachined half-wavelength dipoles fed by a corporate feeding network. Isolation between the antenna array and its feeding network is achieved via a ground plane. This arrangement leads to maximizing the broadside radiation with relatively high front-to-back ratio. Simulations have been carried out using both HFSS and CST, which showed very good agreement. Results reveal that the proposed antenna array has good radiation characteristics, where the directivity, gain, and radiation efficiency are around 10.5 dBi, 9.5 dBi, and 79%, respectively. © 2013 IEEE.

Arrays of suspended silicon nanowires defined by ion beam implantation: mechanical coupling and combination with CMOS technology

Science.gov (United States)

Llobet, J.; Rius, G.; Chuquitarqui, A.; Borrisé, X.; Koops, R.; van Veghel, M.; Perez-Murano, F.

2018-04-01

We present the fabrication, operation, and CMOS integration of arrays of suspended silicon nanowires (SiNWs). The functional structures are obtained by a top-down fabrication approach consisting in a resistless process based on focused ion beam irradiation, causing local gallium implantation and silicon amorphization, plus selective silicon etching by tetramethylammonium hydroxide, and a thermal annealing process in a boron rich atmosphere. The last step enables the electrical functionality of the irradiated material. Doubly clamped silicon beams are fabricated by this method. The electrical readout of their mechanical response can be addressed by a frequency down-mixing detection technique thanks to an enhanced piezoresistive transduction mechanism. Three specific aspects are discussed: (i) the engineering of mechanically coupled SiNWs, by making use of the nanometer scale overhang that it is inherently-generated with this fabrication process, (ii) the statistical distribution of patterned lateral dimensions when fabricating large arrays of identical devices, and (iii) the compatibility of the patterning methodology with CMOS circuits. Our results suggest that the application of this method to the integration of large arrays of suspended SiNWs with CMOS circuitry is interesting in view of applications such as advanced radio frequency band pass filters and ultra-high-sensitivity mass sensors.

Dark noise rates in irradiated silicon photomultiplier arrays

Energy Technology Data Exchange (ETDEWEB)

Bachmann, Sebastian; Comerma, Albert; Gerick, David; Han, Xiaoxue; Hansmann-Menzemer, Stephanie; Kecke, Matthieu; Leverington, Blake; Mazorra de Cos, Jose; Mitzel, Dominik; Neuner, Max; Uwer, Ulrich [Physikalisches Institut, Universitaet Heidelberg (Germany); Collaboration: LHCb-Collaboration

2016-07-01

The planned downstream tracking system - the Scintillating Fibre Tracker - for the LHCb upgrade uses silicon photomultiplier (SiPM) arrays of 128 channels to read out mats made of 250 μm diameter scintillating fibres. In the LHCb environment the neutron flux degrades the silicon detectors to the edge of an acceptable performance in terms of DCR. Studies have shown that the dark count rate (DCR) of the SiPMs increases linearly with the neutron flux. Towards the end of the designed lifetime of the experiment the DCR per SiPM channel operated at T = -40 C is expected to reach a few MHz after partial annealing. To reduce the impact of the DCR - while at the same time provide efficient hit reconstruction - a clustering algorithm is developed to separate signal from noise. A brief introduction into the custom designed read-out ASIC and the cluster algorithm are presented along with the studies of the dark count cluster rate dependency on the neutron flux, the DCR per channel and the effects of the applied signal thresholds for the clustering algorithm.

Laser desorption/ionization from nanostructured surfaces: nanowires, nanoparticle films and silicon microcolumn arrays

International Nuclear Information System (INIS)

Chen Yong; Luo Guanghong; Diao Jiajie; Chornoguz, Olesya; Reeves, Mark; Vertes, Akos

2007-01-01

Due to their optical properties and morphology, thin films formed of nanoparticles are potentially new platforms for soft laser desorption/ionization (SLDI) mass spectrometry. Thin films of gold nanoparticles (with 12±1 nm particle size) were prepared by evaporation-driven vertical colloidal deposition and used to analyze a series of directly deposited polypeptide samples. In this new SLDI method, the required laser fluence for ion detection was equal or less than what was needed for matrix-assisted laser desorption/ionization (MALDI) but the resulting spectra were free of matrix interferences. A silicon microcolumn array-based substrate (a.k.a. black silicon) was developed as a new matrix-free laser desorption ionization surface. When low-resistivity silicon wafers were processed with a 22 ps pulse length 3xω Nd:YAG laser in air, SF 6 or water environment, regularly arranged conical spikes emerged. The radii of the spike tips varied with the processing environment, ranging from approximately 500 nm in water, to ∼2 μm in SF 6 gas and to ∼5 μm in air. Peptide mass spectra directly induced by a nitrogen laser showed the formation of protonated ions of angiotensin I and II, substance P, bradykinin fragment 1-7, synthetic peptide, pro14-arg, and insulin from the processed silicon surfaces but not from the unprocessed areas. Threshold fluences for desorption/ionization were similar to those used in MALDI. Although compared to silicon nanowires the threshold laser pulse energy for ionization is significantly (∼10x) higher, the ease of production and robustness of microcolumn arrays offer complementary benefits

5G antenna array with wide-angle beam steering and dual linear polarizations

KAUST Repository

Klionovski, Kirill

2017-10-25

In this paper, we present the design of a switched-beam antenna array at millimeter-wave frequencies for future 5G applications. The proposed antenna array is based on wideband patch antenna elements and a Butler matrix feed network. The patch antenna has a broad radiation pattern for wide-angle beam steering and allows the simultaneous operation with two orthogonal linear polarizations. A combination of two separated Butler matrices provides independent beam steering for both polarizations in the wide operating band. The antenna array has a simple multilayer construction, and it is made on a low-cost Rogers laminate.

5G antenna array with wide-angle beam steering and dual linear polarizations

KAUST Repository

Klionovski, Kirill; Shamim, Atif; Sharawi, Mohammad Said

2017-01-01

In this paper, we present the design of a switched-beam antenna array at millimeter-wave frequencies for future 5G applications. The proposed antenna array is based on wideband patch antenna elements and a Butler matrix feed network. The patch antenna has a broad radiation pattern for wide-angle beam steering and allows the simultaneous operation with two orthogonal linear polarizations. A combination of two separated Butler matrices provides independent beam steering for both polarizations in the wide operating band. The antenna array has a simple multilayer construction, and it is made on a low-cost Rogers laminate.

Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

KAUST Repository

Frost, Thomas; Jahangir, Shafat; Stark, Ethan; Deshpande, Saniya; Hazari, Arnab Shashi; Zhao, Chao; Ooi, Boon S.; Bhattacharya, Pallab K.

2014-01-01

A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon

KAUST Repository

Frost, Thomas

2014-08-13

A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm2, 3 × 10-17 cm2, 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics. © 2014 American Chemical Society.

Measurement of the spatial resolution of wide-pitch silicon strip detectors with large incident angle

International Nuclear Information System (INIS)

Kawasaki, T.; Hazumi, M.; Nagashima, Y.

1996-01-01

As a part of R ampersand D for the BELLE experiment at KEK-B, we measured the spatial resolution of silicon strip detectors for particles with incident angles ranging from 0 degrees to 75 degrees. These detectors have strips with pitches of 50, 125 and 250 μm on the ohmic side. We have obtained the incident angle dependence which agreed well with a Monte Carlo simulation. The resolution was found to be 11 μm for normal incidence with a pitch of 50 μm, and 29 μm for incident angle of 75 degrees with a pitch of 250μm

Morphology dependent field emission characteristics of ZnS/silicon nanoporous pillar array

Science.gov (United States)

Wang, Ling Li; Zhao, Cheng Zhou; Kang, Li Ping; Liu, De Wei; Zhao, Hui Chun; Hao, Shan Peng; Zhang, Yuan Kai; Chen, Zhen Ping; Li, Xin Jian

2016-10-01

Through depositing zinc sulphide (ZnS) nanoparticals on silicon nanoporous pillar array (Si-NPA) and crater-shaped silicon nanoporous pillar array (c-Si-NPA) by chemical bath deposition (CBD) method, ZnS/Si-NPA and c-ZnS/Si-NPA were prepared and the field emission (FE) properties of them were investigated. The turn-on electric fields of were 3.8 V/mm for ZnS/Si-NPA and 5.0 V/mm for c-ZnS/Si-NPA, respectively. The lower turn-on electric fields of ZnS/Si-NPA than that of c-ZnS/Si-NPA were attributed to the different electric distribution of the field emitters causing by the different surface morphology of the two samples, which was further demonstrated via the simulated results by finite element modeling. The FN curves for the ZnS/Si-NPA showed two-slope behavior. All the results indicate that the morphology play an important role in the FE properties and designing an appropriate top morphology for the emitter is a very efficient way to improve the FE performance.

Hybrid heterojunction solar cell based on organic-inorganic silicon nanowire array architecture.

Science.gov (United States)

Shen, Xiaojuan; Sun, Baoquan; Liu, Dong; Lee, Shuit-Tong

2011-12-07

Silicon nanowire arrays (SiNWs) on a planar silicon wafer can be fabricated by a simple metal-assisted wet chemical etching method. They can offer an excellent light harvesting capability through light scattering and trapping. In this work, we demonstrated that the organic-inorganic solar cell based on hybrid composites of conjugated molecules and SiNWs on a planar substrate yielded an excellent power conversion efficiency (PCE) of 9.70%. The high efficiency was ascribed to two aspects: one was the improvement of the light absorption by SiNWs structure on the planar components; the other was the enhancement of charge extraction efficiency, resulting from the novel top contact by forming a thin organic layer shell around the individual silicon nanowire. On the contrary, the sole planar junction solar cell only exhibited a PCE of 6.01%, due to the lower light trapping capability and the less hole extraction efficiency. It indicated that both the SiNWs structure and the thin organic layer top contact were critical to achieve a high performance organic/silicon solar cell. © 2011 American Chemical Society

Ultracompact high-efficiency polarising beam splitter based on silicon nanobrick arrays.

Science.gov (United States)

Zheng, Guoxing; Liu, Guogen; Kenney, Mitchell Guy; Li, Zile; He, Ping'an; Li, Song; Ren, Zhi; Deng, Qiling

2016-03-21

Since the transmission of anisotropic nano-structures is sensitive to the polarisation of an incident beam, a novel polarising beam splitter (PBS) based on silicon nanobrick arrays is proposed. With careful design of such structures, an incident beam with polarisation direction aligned with the long axis of the nanobrick is almost totally reflected (~98.5%), whilst that along the short axis is nearly totally transmitted (~94.3%). More importantly, by simply changing the width of the nanobrick we can shift the peak response wavelength from 1460 nm to 1625 nm, covering S, C and L bands of the fiber telecommunications windows. The silicon nanobrick-based PBS can find applications in many fields which require ultracompactness, high efficiency, and compatibility with semiconductor industry technologies.

Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection

Directory of Open Access Journals (Sweden)

P. Pignalosa

2011-09-01

Full Text Available Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm and wide angle (from normal incidence to 60º antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer.

Piezoresistive silicon thin film sensor array for biomedical applications

International Nuclear Information System (INIS)

Alpuim, P.; Correia, V.; Marins, E.S.; Rocha, J.G.; Trindade, I.G.; Lanceros-Mendez, S.

2011-01-01

N-type hydrogenated nanocrystalline silicon thin film piezoresistors, with gauge factor - 28, were deposited on rugged and flexible polyimide foils by Hot-wire chemical vapor deposition using a tantalum filament heated to 1750 o C. The piezoresistive response under cyclic quasi-static and dynamical (up to 100 Hz) load conditions is reported. Test structures, consisting of microresistors having lateral dimensions in the range from 50 to 100 μm and thickness of 120 nm were defined in an array by reactive ion etching. Metallic pads, forming ohmic contacts to the sensing elements, were defined by a lift-off process. A readout circuit for the array consisting in a mutiplexer on each row and column of the matrix is proposed. The digital data will be processed, interpreted and stored internally by an ultra low-power micro controller, also responsible for the communication of two-way wireless data, e.g. from inside to outside the human body.

Directing polyallylamine adsorption on microlens array patterned silicon for microarray fabrication.

Science.gov (United States)

Saini, Gaurav; Gates, Richard; Asplund, Matthew C; Blair, Steve; Attavar, Sachin; Linford, Matthew R

2009-06-21

The selective adsorption of reagents is often essential for bioarray and lab-on-a-chip type devices. As the starting point for a bioarray, alkyl monolayer terminated silicon shards were photopatterned in a few nanoseconds with thousands of wells (spots) using an optical element, a microlens array. Polyallylamine (PAAm), a primary amine containing polymer, adsorbed with little selectivity to the spots, i.e., silicon oxide, over the hydrophobic background. However, at appropriate concentrations, addition of a cationic surfactant to the PAAm deposition solution, cetyltrimethylammonium chloride, prevented the nonspecific adsorption of PAAm onto the hydrophobic monolayer, while directing it effectively to the active spots on the device. A nonionic surfactant was less effective in preventing the nonspecific adsorption of PAAm onto the hydrophobic monolayer. The localized reactions/interactions of adsorbed PAAm with four species that are useful for bioconjugate chemistry: glutaric anhydride, phenylenediisothiocyanate, biotin NHS ester, and an oligonucleotide (DNA) were shown in the spots of an array. The reactivity of PAAm was further demonstrated with an isocyanate. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) played an important role in confirming selective surface reactivity and adsorption. X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry, and wetting confirmed PAAm reactivity on planar substrates.

Relaxing the electrostatic screening effect by patterning vertically-aligned silicon nanowire arrays into bundles for field emission application

Energy Technology Data Exchange (ETDEWEB)

Hung, Yung-Jr, E-mail: yungjrhung@gmail.com [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Department of Photonics, National Sun Yat-sen University, No. 70, Lienhai Rd., Kaohsiung 80424, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, San-Liang [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Beng, Looi Choon [Faculty of Engineering, Multimedia University, Jalan Multimedia, 63100 Cyberjaya, Selangor (Malaysia); Chang, Hsuan-Chen [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Huang, Yung-Jui [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Lee, Kuei-Yi; Huang, Ying-Sheng [Department of Electronic Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China); Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd., Taipei 106, Taiwan, ROC (China)

2014-04-01

Top-down fabrication strategies are proposed and demonstrated to realize arrays of vertically-aligned silicon nanowire bundles and bundle arrays of carbon nanotube–silicon nanowire (CNT–SiNW) heterojunctions, aiming for releasing the electrostatic screening effect and improving the field emission characteristics. The trade-off between the reduction in the electrostatic screening effect and the decrease of emission sites leads to an optimal SiNW bundle arrangement which enables the lowest turn-on electric field of 1.4 V/μm and highest emission current density of 191 μA/cm{sup 2} among all testing SiNW samples. Benefiting from the superior thermal and electrical properties of CNTs and the flexible patterning technologies available for SiNWs, bundle arrays of CNT–SiNW heterojunctions show improved and highly-uniform field emission with a lower turn-on electric field of 0.9 V/μm and higher emission current density of 5.86 mA/cm{sup 2}. The application of these materials and their corresponding fabrication approaches is not limited to the field emission but can be used for a variety of emerging fields like nanoelectronics, lithium-ion batteries, and solar cells. - Highlights: • Aligned silicon nanowire (SiNW) bundle arrays are realized with top-down methods. • Growing carbon nanotubes atop SiNW bundle arrays enable uniform field emission. • A turn-on field of 0.9 V/μm and an emission current of > 5 mA/cm{sup 2} are achieved.

On measurement of acoustic pulse arrival angles using a vertical array

Science.gov (United States)

Makarov, D. V.

2017-11-01

We consider a recently developed method to analyze the angular structure of pulsed acoustic fields in an underwater sound channel. The method is based on the Husimi transform that allows us to approximately link a wave field with the corresponding ray arrivals. The advantage of the method lies in the possibility of its practical realization by a vertical hydrophone array crossing only a small part of the oceanic depth. The main aim of the present work is to find the optimal parameter values of the array that ensure good angular accuracy and sufficient reliability of the algorithm to calculate the arrival angles. Broadband pulses with central frequencies of 80 and 240 Hz are considered. It is shown that an array with a length of several hundred meters allows measuring the angular spectrum with an accuracy of up to 1 degree. The angular resolution is lowered with an increase of the sound wavelength due to the fundamental limitations imposed by the uncertainty relation.

Small-angle x-ray scattering in amorphous silicon: A computational study

Science.gov (United States)

Paudel, Durga; Atta-Fynn, Raymond; Drabold, David A.; Elliott, Stephen R.; Biswas, Parthapratim

2018-05-01

We present a computational study of small-angle x-ray scattering (SAXS) in amorphous silicon (a -Si) with particular emphasis on the morphology and microstructure of voids. The relationship between the scattering intensity in SAXS and the three-dimensional structure of nanoscale inhomogeneities or voids is addressed by generating large high-quality a -Si networks with 0.1%-0.3% volume concentration of voids, as observed in experiments using SAXS and positron annihilation spectroscopy. A systematic study of the variation of the scattering intensity in the small-angle scattering region with the size, shape, number density, and the spatial distribution of the voids in the networks is presented. Our results suggest that the scattering intensity in the small-angle region is particularly sensitive to the size and the total volume fraction of the voids, but the effect of the geometry or shape of the voids is less pronounced in the intensity profiles. A comparison of the average size of the voids obtained from the simulated values of the intensity, using the Guinier approximation and Kratky plots, with that of the same from the spatial distribution of the atoms in the vicinity of void surfaces is presented.

Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching

Directory of Open Access Journals (Sweden)

P. Heydari

2014-10-01

Full Text Available In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE was carried out with silver catalyst. Provided solution (or materiel in combination with laser interference lithography (LIL fabricated different reproducible pillars, holes and rhomboidal structures. As a result, Submicron patterning of porous areas and nanohole arrays on Si substrate with a minimum feature size of 600nm was achieved. Measured reflection spectra of the samples present different optical characteristics which is dependent on the shape, thickness of metal catalyst and periodicity of the structure. These structures can be designed to reach a photonic bandgap in special range or antireflection layer in energy harvesting applications. The resulted reflection spectra of applied method are comparable to conventional expensive and complicated dry etching techniques.

Performance of silicon pixel detectors at small track incidence angles for the ATLAS Inner Tracker upgrade

Energy Technology Data Exchange (ETDEWEB)

Viel, Simon, E-mail: sviel@lbl.gov [Physics Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA, United States of America (United States); Banerjee, Swagato [Department of Physics, University of Wisconsin, Madison, WI, United States of America (United States); Brandt, Gerhard; Carney, Rebecca; Garcia-Sciveres, Maurice [Physics Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA, United States of America (United States); Hard, Andrew Straiton; Kaplan, Laser Seymour; Kashif, Lashkar [Department of Physics, University of Wisconsin, Madison, WI, United States of America (United States); Pranko, Aliaksandr [Physics Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA, United States of America (United States); Rieger, Julia [Physics Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA, United States of America (United States); II Physikalisches Institut, Georg-August-Universität, Göttingen (Germany); Wolf, Julian [Physics Division, Lawrence Berkeley National Laboratory and University of California, Berkeley, CA, United States of America (United States); Wu, Sau Lan; Yang, Hongtao [Department of Physics, University of Wisconsin, Madison, WI, United States of America (United States)

2016-09-21

In order to enable the ATLAS experiment to successfully track charged particles produced in high-energy collisions at the High-Luminosity Large Hadron Collider, the current ATLAS Inner Detector will be replaced by the Inner Tracker (ITk), entirely composed of silicon pixel and strip detectors. An extension of the tracking coverage of the ITk to very forward pseudorapidity values is proposed, using pixel modules placed in a long cylindrical layer around the beam pipe. The measurement of long pixel clusters, detected when charged particles cross the silicon sensor at small incidence angles, has potential to significantly improve the tracking efficiency, fake track rejection, and resolution of the ITk in the very forward region. The performance of state-of-the-art pixel modules at small track incidence angles is studied using test beam data collected at SLAC and CERN. - Highlights: • Extended inner pixel barrel layers are proposed for the ATLAS ITk upgrade. • Test beam results at small track incidence angles validate this ATLAS ITk design. • Long pixel clusters are reconstructed with high efficiency at low threshold values. • Excellent angular resolution is achieved using pixel cluster length information.

Performance of silicon pixel detectors at small track incidence angles for the ATLAS Inner Tracker upgrade

International Nuclear Information System (INIS)

Viel, Simon; Banerjee, Swagato; Brandt, Gerhard; Carney, Rebecca; Garcia-Sciveres, Maurice; Hard, Andrew Straiton; Kaplan, Laser Seymour; Kashif, Lashkar; Pranko, Aliaksandr; Rieger, Julia; Wolf, Julian; Wu, Sau Lan; Yang, Hongtao

2016-01-01

In order to enable the ATLAS experiment to successfully track charged particles produced in high-energy collisions at the High-Luminosity Large Hadron Collider, the current ATLAS Inner Detector will be replaced by the Inner Tracker (ITk), entirely composed of silicon pixel and strip detectors. An extension of the tracking coverage of the ITk to very forward pseudorapidity values is proposed, using pixel modules placed in a long cylindrical layer around the beam pipe. The measurement of long pixel clusters, detected when charged particles cross the silicon sensor at small incidence angles, has potential to significantly improve the tracking efficiency, fake track rejection, and resolution of the ITk in the very forward region. The performance of state-of-the-art pixel modules at small track incidence angles is studied using test beam data collected at SLAC and CERN. - Highlights: • Extended inner pixel barrel layers are proposed for the ATLAS ITk upgrade. • Test beam results at small track incidence angles validate this ATLAS ITk design. • Long pixel clusters are reconstructed with high efficiency at low threshold values. • Excellent angular resolution is achieved using pixel cluster length information.

Application of neural networks to digital pulse shape analysis for an array of silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Flores, J.L. [Dpto de Ingeniería Eléctrica y Térmica, Universidad de Huelva (Spain); Martel, I. [Dpto de Física Aplicada, Universidad de Huelva (Spain); CERN, ISOLDE, CH 1211 Geneva, 23 (Switzerland); Jiménez, R. [Dpto de Ingeniería Electrónica, Sist. Informáticos y Automática, Universidad de Huelva (Spain); Galán, J., E-mail: jgalan@diesia.uhu.es [Dpto de Ingeniería Electrónica, Sist. Informáticos y Automática, Universidad de Huelva (Spain); Salmerón, P. [Dpto de Ingeniería Eléctrica y Térmica, Universidad de Huelva (Spain)

2016-09-11

The new generation of nuclear physics detectors that used to study nuclear reactions is considering the use of digital pulse shape analysis techniques (DPSA) to obtain the (A,Z) values of the reaction products impinging in solid state detectors. This technique can be an important tool for selecting the relevant reaction channels at the HYDE (HYbrid DEtector ball array) silicon array foreseen for the Low Energy Branch of the FAIR facility (Darmstadt, Germany). In this work we study the feasibility of using artificial neural networks (ANNs) for particle identification with silicon detectors. Multilayer Perceptron networks were trained and tested with recent experimental data, showing excellent identification capabilities with signals of several isotopes ranging from {sup 12}C up to {sup 84}Kr, yielding higher discrimination rates than any other previously reported.

Synthesis, characterization and application of electroless metal assisted silicon nanowire arrays

Energy Technology Data Exchange (ETDEWEB)

Sahoo, Sumanta Kumar [Centre for Nanoscience & Technology, Department of Mechanical Engineering, Mepco Schlenk Engineering College, Sivakasi 626 005, Tamilnadu (India); Marikani, Arumugam, E-mail: amari@mepcoeng.ac.in [Department of Physics, Mepco Schlenk Engineering College, Sivakasi 626 005, Tamilnadu (India)

2015-12-01

Highlights: • Preparation of Silicon nanowire arrays (SiNWs) by electroless metal deposition technique. • From analysis, it has been found that the as-prepared SiNWs are of 3.5–4.0 μm and 75 nm of length and diameter in average respectively. Further a characteristic Raman peak at 520 cm{sup −1} also has been observed. • It exhibits good electron field-emission properties with turn-on field (E{sub 0}) of about 8.26 V μm{sup −1} at current density (J) of 4.9 μA cm{sup −2}. • Functionalized SiNWs have been used for electrochemical detection bovine serum albumin protein bio-molecules. - Abstract: Vertically aligned silicon nanowire arrays (SiNWs) have been synthesized by electroless metal deposition process. The fabricated SiNWs have an average diameter of 75 nm and 3.5–4.0 μm length, as confirmed from scanning electron microscopy. A characteristic asymmetric peak broadening at 520 cm{sup −1} from Raman spectroscopy was obtained for the SiNWs as compared to the bulk silicon crystal due to phonon confinement. The as-prepared SiNWs exhibit good electron field-emission properties with turn-on field of about 8.26 V μm{sup −1} at a current density of 4.9 μA cm{sup −2}. The SiNWs was functionalized by coating with a thin gold metallic film for 60 s, and then used as bio-probe for the detection of bovine serum albumin (BSA) protein molecules. From the linear sweep voltammetry analysis, the Au coated SiNWs, exhibit linear response to the BSA analyte with increase in concentration. The minimum detection limit of the protein molecule was calculated of about 1.16 μM by the as-synthesized SiNWs probe.

N-Type delta Doping of High-Purity Silicon Imaging Arrays

Science.gov (United States)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

Fabrication of multi-focal microlens array on curved surface for wide-angle camera module

Science.gov (United States)

Pan, Jun-Gu; Su, Guo-Dung J.

2017-08-01

In this paper, we present a wide-angle and compact camera module that consists of microlens array with different focal lengths on curved surface. The design integrates the principle of an insect's compound eye and the human eye. It contains a curved hexagonal microlens array and a spherical lens. Compared with normal mobile phone cameras which usually need no less than four lenses, but our proposed system only uses one lens. Furthermore, the thickness of our proposed system is only 2.08 mm and diagonal full field of view is about 100 degrees. In order to make the critical microlens array, we used the inkjet printing to control the surface shape of each microlens for achieving different focal lengths and use replication method to form curved hexagonal microlens array.

Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

Science.gov (United States)

Cho, Heesook; Yoo, Hana; Park, Soojin

2010-05-18

Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

Sixa-silicon x-ray array

International Nuclear Information System (INIS)

Taylor, I.

1995-01-01

Full text: The Spectrum-X-Gamma (SRG) satellite is scheduled for launch in 1995-96. Mission objectives include broad and narrow band imaging spectroscopy over a wide range of energies from the EUV through hard X-rays with an emphasis on studying galactic and extragalactic X-ray sources. Timing and moderate resolution spectroscopy can be performed with the solid state spectrometer SIXA (Silicon X-Ray Array), placed on the focal plane of the SODART telescope with total effective area of 1150 cm 2 at 6 keV (for f = 8 in telescope). The detector consists of 19 circular Si(Li) pixels, each with an active diameter of 9.2 min and thickness of 3 min. A radiative cooler will be used to bring the detector to the proper operating temperature (120-130 K). The energy range 0.5-20 keV is divided into 1024 channels of 20 eV size. Photons can be recorded with 30 μs time resolution and 160-200 eV (1-7 keV) energy resolution. Potential observing programmes (for e.g. time-resolved Iron Kα line spectroscopy) include stellar coronae, cataclysmic variables and X-ray binaries; accretion discs and coronae of neutron stars and black hole candidates; supernova remnants, active galactic nuclei and clusters of galaxies. (author)

The Texas-Edinburgh-Catania Silicon Array (TECSA): A detector for nuclear astrophysics and nuclear structure studies with rare isotope beams

Energy Technology Data Exchange (ETDEWEB)

Roeder, B.T., E-mail: broeder@comp.tamu.ed [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); McCleskey, M.; Trache, L.; Alharbi, A.A.; Banu, A. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Cherubini, S. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Universita di Catania, I95123 Catania (Italy); Davinson, T. [University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom); Goldberg, V.Z. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Gulino, M. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Universita di Catania, I95123 Catania (Italy); Pizzone, R.G. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Simmons, E. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Sparta, R. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Spiridon, A. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Spitaleri, C. [INFN-Laboratori Nazionali del Sud, Via S. Sofia 62, I95123 Catania (Italy); Dipartimento di Fisica e Astronomia, Universita di Catania, I95123 Catania (Italy); Wallace, J.P. [University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom); Tribble, R.E. [Cyclotron Institute, Texas A and M University, College Station, TX 77843-3366 (United States); Woods, P.J. [University of Edinburgh, Edinburgh EH9 3JZ (United Kingdom)

2011-04-01

We present the details of the construction and commissioning of the Texas-Edinburgh-Catania Silicon Array (TECSA). TECSA is composed of up to 16 Micron Semiconductor Ltd. type-YY1 silicon strip detectors and associated electronics, which is designed for use in studies of nuclear astrophysics and nuclear structure with rare isotope beams. TECSA was assembled at the Texas A and M University Cyclotron Institute and will be housed there for the next few years. The array was commissioned in a recent experiment where the d({sup 14}C,p){sup 15}C reaction at 11.7 MeV/u was measured in inverse kinematics. The results of the measurement and a discussion of the future use of this array are presented.

The Texas-Edinburgh-Catania Silicon Array (TECSA): A detector for nuclear astrophysics and nuclear structure studies with rare isotope beams

International Nuclear Information System (INIS)

Roeder, B.T.; McCleskey, M.; Trache, L.; Alharbi, A.A.; Banu, A.; Cherubini, S.; Davinson, T.; Goldberg, V.Z.; Gulino, M.; Pizzone, R.G.; Simmons, E.; Sparta, R.; Spiridon, A.; Spitaleri, C.; Wallace, J.P.; Tribble, R.E.; Woods, P.J.

2011-01-01

We present the details of the construction and commissioning of the Texas-Edinburgh-Catania Silicon Array (TECSA). TECSA is composed of up to 16 Micron Semiconductor Ltd. type-YY1 silicon strip detectors and associated electronics, which is designed for use in studies of nuclear astrophysics and nuclear structure with rare isotope beams. TECSA was assembled at the Texas A and M University Cyclotron Institute and will be housed there for the next few years. The array was commissioned in a recent experiment where the d( 14 C,p) 15 C reaction at 11.7 MeV/u was measured in inverse kinematics. The results of the measurement and a discussion of the future use of this array are presented.

Periodic arrays of deep nanopores made in silicon with reactive ion etching and deep UV lithography

International Nuclear Information System (INIS)

Woldering, Leon A; Tjerkstra, R Willem; Vos, Willem L; Jansen, Henri V; Setija, Irwan D

2008-01-01

We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF 6 , optimized for the formation of deep nanopores. We have realized structures with pitches between 440 and 750 nm, pore diameters between 310 and 515 nm, and depth to diameter aspect ratios up to 16. To the best of our knowledge, this is the highest aspect ratio ever reported for arrays of nanopores in silicon made with a reactive ion etching process. Our experimental results show that the etching rate of the nanopores is aspect-ratio-dependent, and is mostly influenced by the angular distribution of the etching ions. Furthermore we show both experimentally and theoretically that, for sub-micrometer structures, reducing the sidewall erosion is the best way to maximize the aspect ratio of the pores. Our structures have potential applications in chemical sensors, in the control of liquid wetting of surfaces, and as capacitors in high-frequency electronics. We demonstrate by means of optical reflectivity that our high-quality structures are very well suited as photonic crystals. Since the process studied is compatible with existing CMOS semiconductor fabrication, it allows for the incorporation of the etched arrays in silicon chips

Label-free silicon photonic biosensor system with integrated detector array

Science.gov (United States)

Yan, Rongjin; Mestas, Santano P.; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S.

2010-01-01

An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide’s upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip. PMID:19606292

Label-free silicon photonic biosensor system with integrated detector array.

Science.gov (United States)

Yan, Rongjin; Mestas, Santano P; Yuan, Guangwei; Safaisini, Rashid; Dandy, David S; Lear, Kevin L

2009-08-07

An integrated, inexpensive, label-free photonic waveguide biosensor system with multi-analyte capability has been implemented on a silicon photonics integrated circuit from a commercial CMOS line and tested with nanofilms. The local evanescent array coupled (LEAC) biosensor is based on a new physical phenomenon that is fundamentally different from the mechanisms of other evanescent field sensors. Increased local refractive index at the waveguide's upper surface due to the formation of a biological nanofilm causes local modulation of the evanescent field coupled into an array of photodetectors buried under the waveguide. The planar optical waveguide biosensor system exhibits sensitivity of 20%/nm photocurrent modulation in response to adsorbed bovine serum albumin (BSA) layers less than 3 nm thick. In addition to response to BSA, an experiment with patterned photoresist as well as beam propagation method simulations support the evanescent field shift principle. The sensing mechanism enables the integration of all optical and electronic components for a multi-analyte biosensor system on a chip.

Investigation of silicon width (p, p') resonance scattering in left angle 110 right angle channeling direction

International Nuclear Information System (INIS)

Ditroi, F.; Meyer, J.D.; Michelmann, R.; Kislat, D.; Bethge, K.

1994-01-01

Crystalline silicon samples were investigated both in channeling and random directions by using the (p, p') resonance scattering at 2.3 MeV bombarding energy. The samples were positioned in the scattering chamber of a VdG accelerator after 2 m collimating path. The peaks due to the resonance at 2.1 MeV were measured at different angles in the vicinity of the channeling and random directions. A peak shift and broadening was seen at the channeling and near channeling directions compared with the random one. The spectra were also simulated using our modified Monte Carlo calculation method for stopping, range and energy distribution in highly ordered materials. The energy shift and the broadening between the random and the channeling spectra were compared and explained. (orig.)

Photocatalytic activity of self-assembled porous TiO2 nano-columns array fabricated by oblique angle sputter deposition

Science.gov (United States)

Shi, Pengjun; Li, Xibo; Zhang, Qiuju; Yi, Zao; Luo, Jiangshan

2018-04-01

A well-separated and oriented TiO2 nano-columns arrays with porous structure were fabricated by the oblique angle sputter deposition technique and subsequently annealing at 450 °C in Ar/O2 mixed atmosphere. The deposited substrate was firstly modified by a template of self-assembled close-packed arrays of 500 nm-diameter silica (SiO2) spheres. Scanning electronic microscopic (SEM) images show that the porous columnar nanostructure is formed as a result of the geometric shadowing effect and surface diffusion of the adatoms in oblique angle deposition (OAD). X-ray diffraction (XRD) measurements reveal that the physically OAD film with annealing treatment are generally mixed phase of rutile and anatase TiO2 polymorphic forms. The morphology induced absorbance and band gap tuning by different substrates was demonstrated by the UV–vis spectroscopy. The well-separated one-dimensional (1D) nano-columns array with specific large porous surface area is beneficial for charge separation in photocatalytic degradation. Compared with compact thin film, such self-assembled porous TiO2 nano-columns array fabricated by oblique angle sputter deposition performed an enhanced visible light induced photocatalytic activity by decomposing methyl orange (MO) solution. The well-designed periodic array-structured porous TiO2 films by using modified patterned substrates has been demonstrated significantly increased absorption edge in the UV-visible light region with a narrower optical band gap, which are expected to be favorable for application in photovoltaic, lithium-ion insertion and photocatalytic, etc.

Development of a multi-channel front-end electronics module based on ASIC for silicon strip array detectors

International Nuclear Information System (INIS)

Zhao Xingwen; Yan Duo; Su Hong; Qian Yi; Kong Jie; Zhang Xueheng; Li Zhankui; Li Haixia

2014-01-01

The silicon strip array detector is one of external target facility subsystems in the Cooling Storage Ring on the Heavy Ion Research Facility at Lanzhou (HIRFL-CSR). Using the ASICs, the front-end electronics module has been developed for the silicon strip array detectors and can implement measurement of energy of 96 channels. The performance of the front-end electronics module has been tested. The energy linearity of the front-end electronics module is better than 0.3% for the dynamic range of 0.1∼0.7 V. The energy resolution is better than 0.45%. The maximum channel crosstalk is better than 10%. The channel consistency is better than 1.3%. After continuously working for 24 h at room temperature, the maximum drift of the zero-peak is 1.48 mV. (authors)

Build-up of the silicon micro-strip detector array in ETF of HIRFL-CSR

International Nuclear Information System (INIS)

Wang Pengfei; Li Zhankui; Li Haixia

2014-01-01

Silicon micro-strip detectors have been widely used in the world-famous nuclear physics laboratories due to their better position resolution and energy resolution. Double-sided silicon micro-strip detectors with a position resolution of 0.5 mm × 0.5 mm, have been fabricated in the IMP (Institute of Modern Physics, CAS) by using microelectronics technology. These detectors have been used in the ETF (External Target Facility) of HIRFL-CSR, as ΔE detectors of the ΔE-E telescope system and the track detectors. With the help of flexibility printed circuit board (FPCB) and the integrated ASIC chips, a compact multi-channel front-end electronic board has been designed to fulfill the acquisition of the energy and position information of the Silicon micro-strip detectors. It is described in this paper that the build-up of the Silicon micro-strip detector array in ETF of HIRFL-CSR, the determination of the energy resolution of the detector units, and the energy resolution of approximately 1% obtained for 5∼9 MeV α particles in vacuum. (authors)

High-power, ultralow-mass solar arrays: FY-77 solar arrays technology readiness assessment report, volume 2

Science.gov (United States)

Costogue, E. N.; Young, L. E.; Brandhorst, H. W., Jr.

1978-01-01

Development efforts are reported in detail for: (1) a lightweight solar array system for solar electric propulsion; (2) a high efficiency thin silicon solar cell; (3) conceptual design of 200 W/kg solar arrays; (4) fluorocarbon encapsulation for silicon solar cell array; and (5) technology assessment of concentrator solar arrays.

Microfabrication of an Implantable silicone Microelectrode array for an epiretinal prosthesis

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam Nader [Univ. of California, Davis, CA (United States)

2003-06-10

Millions of people suffering from diseases such as retinitis pigmentosa and macular degeneration are legally blind due to the loss of photoreceptor function. Fortunately a large percentage of the neural cells connected to the photoreceptors remain viable, and electrical stimulation of these cells has been shown to result in visual perception. These findings have generated worldwide efforts to develop a retinal prosthesis device, with the hope of restoring vision. Advances in microfabrication, integrated circuits, and wireless technologies provide the means to reach this challenging goal. This dissertation describes the development of innovative silicone-based microfabrication techniques for producing an implantable microelectrode array. The microelectrode array is a component of an epiretinal prosthesis being developed by a multi-laboratory consortium. This array will serve as the interface between an electronic imaging system and the human eye, directly stimulating retinal neurons via thin film conducting traces. Because the array is intended as a long-term implant, vital biological and physical design requirements must be met. A retinal implant poses difficult engineering challenges due to the size of the intraocular cavity and the delicate retina. Not only does it have to be biocompatible in terms of cytotoxicity and degradation, but it also has to be structurally biocompatible, with regard to smooth edges and high conformability; basically mimicking the biological tissue. This is vital to minimize stress and prevent physical damage to the retina. Also, the device must be robust to withstand the forces imposed on it during fabrication and implantation. In order to meet these biocompatibility needs, the use of non-conventional microfabrication materials such as silicone is required. This mandates the enhancement of currently available polymer-based fabrication techniques and the development of new microfabrication methods. Through an iterative process, devices

Use of hydroxypropylmethylcellulose 2% for removing adherent silicone oil from silicone intraocular lenses

OpenAIRE

Wong , S Chien; Ramkissoon , Yashin D; Lopez , Mauricio; Page , Kristopher; Parkin , Ivan P; Sullivan , Paul M

2009-01-01

Abstract Background / aims: To investigate the effect of hydroxypropylmethylcellulose (HPMC) on the physical interaction (contact angle) between silicone oil and a silicone intraocular lens (IOL). Methods: In vitro experiments were performed, to determine the effect of HPMC (0.5%, 1% or 2%), with or without an additional simple mechanical manoeuvre, on the contact angle of silicone oil at the surface of both silicone and acrylic (control) IOLs. A balanced salt solu...

Micromachined silicon acoustic delay line with improved structural stability and acoustic directivity for real-time photoacoustic tomography

Science.gov (United States)

Cho, Young; Kumar, Akhil; Xu, Song; Zou, Jun

2017-03-01

Recent studies have shown that micromachined silicon acoustic delay lines can provide a promising solution to achieve real-time photoacoustic tomography without the need for complex transducer arrays and data acquisition electronics. However, as its length increases to provide longer delay time, the delay line becomes more vulnerable to structural instability due to reduced mechanical stiffness. In addition, the small cross-section area of the delay line results in a large acoustic acceptance angle and therefore poor directivity. To address these two issues, this paper reports the design, fabrication, and testing of a new silicon acoustic delay line enhanced with 3D printed polymer micro linker structures. First, mechanical deformation of the silicon acoustic delay line (with and without linker structures) under gravity was simulated by using finite element method. Second, the acoustic crosstalk and acoustic attenuation caused by the polymer micro linker structures were evaluated with both numerical simulation and ultrasound transmission testing. The result shows that the use of the polymer micro linker structures significantly improves the structural stability of the silicon acoustic delay lines without creating additional acoustic attenuation and crosstalk. In addition, a new tapered design for the input terminal of the delay line was also investigate to improve its acoustic directivity by reducing the acoustic acceptance angle. These two improvements are expected to provide an effective solution to eliminate current limitations on the achievable acoustic delay time and out-of-plane imaging resolution of micromachined silicon acoustic delay line arrays.

Superparamagnetic iron oxide nanoparticle attachment on array of micro test tubes and microbeakers formed on p-type silicon substrate for biosensor applications

Directory of Open Access Journals (Sweden)

Raja Sufi

2011-01-01

Full Text Available Abstract A uniformly distributed array of micro test tubes and microbeakers is formed on a p-type silicon substrate with tunable cross-section and distance of separation by anodic etching of the silicon wafer in N, N-dimethylformamide and hydrofluoric acid, which essentially leads to the formation of macroporous silicon templates. A reasonable control over the dimensions of the structures could be achieved by tailoring the formation parameters, primarily the wafer resistivity. For a micro test tube, the cross-section (i.e., the pore size as well as the distance of separation between two adjacent test tubes (i.e., inter-pore distance is typically approximately 1 μm, whereas, for a microbeaker the pore size exceeds 1.5 μm and the inter-pore distance could be less than 100 nm. We successfully synthesized superparamagnetic iron oxide nanoparticles (SPIONs, with average particle size approximately 20 nm and attached them on the porous silicon chip surface as well as on the pore walls. Such SPION-coated arrays of micro test tubes and microbeakers are potential candidates for biosensors because of the biocompatibility of both silicon and SPIONs. As acquisition of data via microarray is an essential attribute of high throughput bio-sensing, the proposed nanostructured array may be a promising step in this direction.

Electricity from photovoltaic solar cells: Flat-Plate Solar Array Project final Report. Volume II: Silicon material

OpenAIRE

Lutwack, R.

1986-01-01

The Flat-Plate Solar Array (FSA) Project, funded by the U.S. Government and managed by the Jet Propulsion Laboratory, was formed in 1975 to develop the module/array technology needed to attain widespread terrestrial use of photovoltaics by 1985. To accomplish this, the FSA Project established and managed an Industry, University, and Federal Government Team to perform the needed research and development. The goal of the Silicon Material Task, a part of the FSA Project, was to develop and ...

All-silicon nanorod-based Dammann gratings.

Science.gov (United States)

Li, Zile; Zheng, Guoxing; He, Ping'An; Li, Song; Deng, Qiling; Zhao, Jiangnan; Ai, Yong

2015-09-15

Established diffractive optical elements (DOEs), such as Dammann gratings, whose phase profile is controlled by etching different depths into a transparent dielectric substrate, suffer from a contradiction between the complexity of fabrication procedures and the performance of such gratings. In this Letter, we combine the concept of geometric phase and phase modulation in depth, and prove by theoretical analysis and numerical simulation that nanorod arrays etched on a silicon substrate have a characteristic of strong polarization conversion between two circularly polarized states and can act as a highly efficient half-wave plate. More importantly, only by changing the orientation angles of each nanorod can the arrays control the phase of a circularly polarized light, cell by cell. With the above principle, we report the realization of nanorod-based Dammann gratings reaching diffraction efficiencies of 50%-52% in the C-band fiber telecommunications window (1530-1565 nm). In this design, uniform 4×4 spot arrays with an extending angle of 59°×59° can be obtained in the far field. Because of these advantages of the single-step fabrication procedure, accurate phase controlling, and strong polarization conversion, nanorod-based Dammann gratings could be utilized for various practical applications in a range of fields.

Thermal Characterisation of Micro Flat Aluminium Heat Pipe Arrays by Varying Working Fluid and Inclination Angle

Directory of Open Access Journals (Sweden)

Guanghan Huang

2018-06-01

Full Text Available A micro heat pipe array is desirable owing to its high heat transfer capacity, compact size, and high surface–volume ratio compared with conventional heat pipes. In this study, micro flat aluminium heat pipe arrays (MF-AHPA were developed and systematically characterised by varying working fluid and inclination angle. Three MF-AHPAs with different working fluids, i.e., acetone, cyclopentane, and n-hexane, were fabricated. The acetone MF-AHPA achieved the best thermal performance. The underlying mechanism is the small flow viscous friction and small shearing force of liquid vapour. Additionally, the experimental results show a strong dependence of MF-AHPAs’ thermal resistance on the orientation due to the gravitational effect on axial liquid distribution. Finally, a criterion is proposed to determine the optimal inclination angle of the MF-AHPA. In the present study, a volumetric fraction (αa,c of 74 ± 7% has been shown to well predict an optimal inclination angle of the MF-AHPAs with various working fluids and heat loads.

Polarization Smoothing Generalized MUSIC Algorithm with Polarization Sensitive Array for Low Angle Estimation.

Science.gov (United States)

Tan, Jun; Nie, Zaiping

2018-05-12

Direction of Arrival (DOA) estimation of low-altitude targets is difficult due to the multipath coherent interference from the ground reflection image of the targets, especially for very high frequency (VHF) radars, which have antennae that are severely restricted in terms of aperture and height. The polarization smoothing generalized multiple signal classification (MUSIC) algorithm, which combines polarization smoothing and generalized MUSIC algorithm for polarization sensitive arrays (PSAs), was proposed to solve this problem in this paper. Firstly, the polarization smoothing pre-processing was exploited to eliminate the coherence between the direct and the specular signals. Secondly, we constructed the generalized MUSIC algorithm for low angle estimation. Finally, based on the geometry information of the symmetry multipath model, the proposed algorithm was introduced to convert the two-dimensional searching into one-dimensional searching, thus reducing the computational burden. Numerical results were provided to verify the effectiveness of the proposed method, showing that the proposed algorithm has significantly improved angle estimation performance in the low-angle area compared with the available methods, especially when the grazing angle is near zero.

Statistical contact angle analyses; "slow moving" drops on a horizontal silicon-oxide surface.

Science.gov (United States)

Schmitt, M; Grub, J; Heib, F

2015-06-01

Sessile drop experiments on horizontal surfaces are commonly used to characterise surface properties in science and in industry. The advancing angle and the receding angle are measurable on every solid. Specially on horizontal surfaces even the notions themselves are critically questioned by some authors. Building a standard, reproducible and valid method of measuring and defining specific (advancing/receding) contact angles is an important challenge of surface science. Recently we have developed two/three approaches, by sigmoid fitting, by independent and by dependent statistical analyses, which are practicable for the determination of specific angles/slopes if inclining the sample surface. These approaches lead to contact angle data which are independent on "user-skills" and subjectivity of the operator which is also of urgent need to evaluate dynamic measurements of contact angles. We will show in this contribution that the slightly modified procedures are also applicable to find specific angles for experiments on horizontal surfaces. As an example droplets on a flat freshly cleaned silicon-oxide surface (wafer) are dynamically measured by sessile drop technique while the volume of the liquid is increased/decreased. The triple points, the time, the contact angles during the advancing and the receding of the drop obtained by high-precision drop shape analysis are statistically analysed. As stated in the previous contribution the procedure is called "slow movement" analysis due to the small covered distance and the dominance of data points with low velocity. Even smallest variations in velocity such as the minimal advancing motion during the withdrawing of the liquid are identifiable which confirms the flatness and the chemical homogeneity of the sample surface and the high sensitivity of the presented approaches. Copyright © 2014 Elsevier Inc. All rights reserved.

Reduction of Cr(VI) to Cr(III) using silicon nanowire arrays under visible light irradiation

Energy Technology Data Exchange (ETDEWEB)

Fellahi, Ouarda [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Centre de Recherche en Technologie des Semi-conducteurs pour l' Energétique-CRTSE 02, Bd Frantz Fanon, BP. 140, Alger 7 Merveilles (Algeria); Barras, Alexandre [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Pan, Guo-Hui [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dong Nanhu Road, Changchun 130033 (China); Coffinier, Yannick [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); Hadjersi, Toufik [Centre de Recherche en Technologie des Semi-conducteurs pour l' Energétique-CRTSE 02, Bd Frantz Fanon, BP. 140, Alger 7 Merveilles (Algeria); Maamache, Mustapha [Laboratoire de Physique Quantique et Systèmes Dynamiques, Département de Physique, Université de Sétif, Sétif 19000 (Algeria); Szunerits, Sabine [Institut d' Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Avenue Poincaré—BP 70478, 59652 Villeneuve d' Ascq Cedex (France); and others

2016-03-05

Highlights: • Cr(VI) reduction to Cr(III) using silicon nanowires decorated with Cu nanoparticles. • The reduction takes place at room temperature and neutral pH under visible light. • The photocatalytic reduction was enhanced by addition of adipic or citric acid. - Abstract: We report an efficient visible light-induced reduction of hexavalent chromium Cr(VI) to trivalent Cr(III) by direct illumination of an aqueous solution of potassium dichromate (K{sub 2}Cr{sub 2}O{sub 7}) in the presence of hydrogenated silicon nanowires (H-SiNWs) or silicon nanowires decorated with copper nanoparticles (Cu NPs-SiNWs) as photocatalyst. The SiNW arrays investigated in this study were prepared by chemical etching of crystalline silicon in HF/AgNO{sub 3} aqueous solution. The Cu NPs were deposited on SiNW arrays via electroless deposition technique. Visible light irradiation of an aqueous solution of K{sub 2}Cr{sub 2}O{sub 7} (10{sup −4} M) in presence of H-SiNWs showed that these substrates were not efficient for Cr(VI) reduction. The reduction efficiency achieved was less than 10% after 120 min irradiation at λ > 420 nm. Addition of organic acids such as citric or adipic acid in the solution accelerated Cr(VI) reduction in a concentration-dependent manner. Interestingly, Cu NPs-SiNWs was found to be a very efficient interface for the reduction of Cr(VI) to Cr(III) in absence of organic acids. Almost a full reduction of Cr(VI) was achieved by direct visible light irradiation for 140 min using this photocatalyst.

Wideband metamaterial array with polarization-independent and wide incident angle for harvesting ambient electromagnetic energy and wireless power transfer

Science.gov (United States)

Zhong, Hui-Teng; Yang, Xue-Xia; Song, Xing-Tang; Guo, Zhen-Yue; Yu, Fan

2017-11-01

In this work, we introduced the design, demonstration, and discussion of a wideband metamaterial array with polarization-independent and wide-angle for harvesting ambient electromagnetic (EM) energy and wireless power transfer. The array consists of unit cells with one square ring and four metal bars. In comparison to the published metamaterial arrays for harvesting EM energy or wireless transfer, this design had the wide operation bandwidth with the HPBW (Half Power Band Width) of 110% (6.2 GHz-21.4 GHz), which overcomes the narrow-band operation induced by the resonance characteristic of the metamaterial. On the normal incidence, the simulated maximum harvesting efficiency was 96% and the HPBW was 110% for the random polarization wave. As the incident angle increases to 45°, the maximum efficiency remained higher than 88% and the HPBW remained higher than 83% for the random polarization wave. Furthermore, the experimental verification of the designed metamaterial array was conducted, and the measured results were in reasonable agreement with the simulated ones.

Nanopore arrays in a silicon membrane for parallel single-molecule detection: fabrication

Science.gov (United States)

Schmidt, Torsten; Zhang, Miao; Sychugov, Ilya; Roxhed, Niclas; Linnros, Jan

2015-08-01

Solid state nanopores enable translocation and detection of single bio-molecules such as DNA in buffer solutions. Here, sub-10 nm nanopore arrays in silicon membranes were fabricated by using electron-beam lithography to define etch pits and by using a subsequent electrochemical etching step. This approach effectively decouples positioning of the pores and the control of their size, where the pore size essentially results from the anodizing current and time in the etching cell. Nanopores with diameters as small as 7 nm, fully penetrating 300 nm thick membranes, were obtained. The presented fabrication scheme to form large arrays of nanopores is attractive for parallel bio-molecule sensing and DNA sequencing using optical techniques. In particular the signal-to-noise ratio is improved compared to other alternatives such as nitride membranes suffering from a high-luminescence background.

Hollow silicon microneedle array based trans-epidermal antiemetic patch for efficient management of chemotherapy induced nausea and vomiting

Science.gov (United States)

Kharbikar, Bhushan N.; Kumar S., Harish; Kr., Sindhu; Srivastava, Rohit

2015-12-01

Chemotherapy Induced Nausea and Vomiting (CINV) is a serious health concern in the treatment of cancer patients. Conventional routes for administering anti-emetics (i.e. oral and parenteral) have several drawbacks such as painful injections, poor patient compliance, dependence on skilled personnel, non-affordability to majority of population (parenteral), lack of programmability and suboptimal bioavailability (oral). Hence, we have developed a trans-epidermal antiemetic drug delivery patch using out-of-plane hollow silicon microneedle array. Microneedles are pointed micron-scale structures that pierce the epidermal layer of skin to reach dermal blood vessels and can directly release the drug in their vicinity. They are painless by virtue of avoiding significant contact with dermal sensory nerve endings. This alternate approach gives same pharmacodynamic effects as par- enteral route at a sparse drug-dose requirement, hence negligible side-effects and improved patient compliance. Microneedle design attributes were derived by systematic study of human skin anatomy, natural micron-size structures like wasp-sting and cactus-spine and multi-physics simulations. We used deep reactive ion etching with Bosch process and optimized recipe of gases to fabricate high-aspect-ratio hollow silicon microneedle array. Finally, microneedle array and polydimethylsiloxane drug reservoir were assembled to make finished anti-emetic patch. We assessed microneedles mechanical stability, physico-chemical properties and performed in-vitro, ex- vivo and in-vivo studies. These studies established functional efficacy of the device in trans-epidermal delivery of anti-emetics, its programmability, ease of use and biosafety. Thus, out-of-plane hollow silicon microneedle array trans-epidermal antiemetic patch is a promising strategy for painless and effective management of CINV at low cost in mainstream healthcare.

Core-shell heterojunction of silicon nanowire arrays and carbon quantum dots for photovoltaic devices and self-driven photodetectors.

Science.gov (United States)

Xie, Chao; Nie, Biao; Zeng, Longhui; Liang, Feng-Xia; Wang, Ming-Zheng; Luo, Linbao; Feng, Mei; Yu, Yongqiang; Wu, Chun-Yan; Wu, Yucheng; Yu, Shu-Hong

2014-04-22

Silicon nanostructure-based solar cells have lately intrigued intensive interest because of their promising potential in next-generation solar energy conversion devices. Herein, we report a silicon nanowire (SiNW) array/carbon quantum dot (CQD) core-shell heterojunction photovoltaic device by directly coating Ag-assisted chemical-etched SiNW arrays with CQDs. The heterojunction with a barrier height of 0.75 eV exhibited excellent rectifying behavior with a rectification ratio of 10(3) at ±0.8 V in the dark and power conversion efficiency (PCE) as high as 9.10% under AM 1.5G irradiation. It is believed that such a high PCE comes from the improved optical absorption as well as the optimized carrier transfer and collection capability. Furthermore, the heterojunction could function as a high-performance self-driven visible light photodetector operating in a wide switching wavelength with good stability, high sensitivity, and fast response speed. It is expected that the present SiNW array/CQD core-shell heterojunction device could find potential applications in future high-performance optoelectronic devices.

A compact solid-state detector for small angle particle tracking

International Nuclear Information System (INIS)

Altieri, S.; Barnaba, O.; Braghieri, A.; Cambiaghi, M.; Lanza, A.; Locatelli, T.; Panzeri, A.; Pedroni, P.; Pinelli, T.; Jennewein, P.; Lang, M.; Preobrazhensky, I.; Annand, J.R.M.; Sadiq, F.

2000-01-01

MIcrostrip Detector Array System (MIDAS) is a compact silicon-tracking telescope for charged particles emitted at small angles in intermediate energy photonuclear reactions. It was realized to increase the angular acceptance of the DAPHNE detector and used in an experimental program to check the Gerasimov-Drell-Hearn sum rule at the Mainz electron microtron (MAMI). MIDAS provides a trigger for charged hadrons, p/π ± identification and particle tracking in the region 7 deg. <θ<16 deg.. In this paper we present the main characteristics of MIDAS and its measured performances

A compact solid-state detector for small angle particle tracking

Energy Technology Data Exchange (ETDEWEB)

Altieri, S.; Barnaba, O.; Braghieri, A. E-mail: alessandro.braghieri@pv.infn.it; Cambiaghi, M.; Lanza, A.; Locatelli, T.; Panzeri, A.; Pedroni, P.; Pinelli, T.; Jennewein, P.; Lang, M.; Preobrazhensky, I.; Annand, J.R.M.; Sadiq, F

2000-09-21

MIcrostrip Detector Array System (MIDAS) is a compact silicon-tracking telescope for charged particles emitted at small angles in intermediate energy photonuclear reactions. It was realized to increase the angular acceptance of the DAPHNE detector and used in an experimental program to check the Gerasimov-Drell-Hearn sum rule at the Mainz electron microtron (MAMI). MIDAS provides a trigger for charged hadrons, p/{pi}{sup {+-}} identification and particle tracking in the region 7 deg. <{theta}<16 deg.. In this paper we present the main characteristics of MIDAS and its measured performances.

Silicon PIN diode hybrid arrays for charged particle detection: Building blocks for vertex detectors at the SSC

International Nuclear Information System (INIS)

Kramer, G.; Gaalema, S.; Shapiro, S.L.; Dunwoodie, W.M.; Arens, J.F.; Jernigan, J.G.

1989-05-01

Two-dimensional arrays of solid state detectors have long been used in visible and infrared systems. Hybrid arrays with separately optimized detector and readout substrates have been extensively developed for infrared sensors. The characteristics and use of these infrared readout chips with silicon PIN diode arrays produced by MICRON SEMICONDUCTOR for detecting high-energy particles are reported. Some of these arrays have been produced in formats as large as 512 /times/ 512 pixels; others have been radiation hardened to total dose levels beyond 1 Mrad. Data generation rates of 380 megasamples/second have been achieved. Analog and digital signal transmission and processing techniques have also been developed to accept and reduce these high data rates. 9 refs., 15 figs., 2 tabs

Two-dimensional optical phased array antenna on silicon-on-insulator.

Science.gov (United States)

Van Acoleyen, Karel; Rogier, Hendrik; Baets, Roel

2010-06-21

Optical wireless links can offer a very large bandwidth and can act as a complementary technology to radiofrequency links. Optical components nowadays are however rather bulky. Therefore, we have investigated the potential of silicon photonics to fabricated integrated components for wireless optical communication. This paper presents a two-dimensional phased array antenna consisting of grating couplers that couple light off-chip. Wavelength steering of $0.24 degrees /nm is presented reducing the need of active phase modulators. The needed steering range is $1.5 degrees . The 3dB angular coverage range of these antennas is about $0.007pi sr with a directivity of more than 38dBi and antenna losses smaller than 3dB.

Crystallization behavior of polyethylene on silicon wafers in solution casting processes traced by time-resolved measurements of synchrotron grazing-incidence small-angle and wide-angle X-ray scattering

International Nuclear Information System (INIS)

Sasaki, S; Masunaga, H; Takata, M; Itou, K; Tashiro, K; Okuda, H; Takahara, A

2009-01-01

Crystallization behavior of polyethylene (PE) on silicon wafers in solution casting processes has been successfully traced by time-resolved grazing-incidence small-angle and wide-angle X-ray scattering (GISWAXS) measurements utilizing synchrotron radiation. A p-xylene solution of PE kept at ca. 343 K was dropped on a silicon wafer at ca. 298 K. While the p-xylene evaporated naturally from the dropped solution sample, PE chains crystallized to be a thin film. Raman spectral measurements were performed simultaneously with the GISWAXS measurements to evaluate quantitatively the p-xylene the dropped solution contained. Grazing-incidence wide-angle X-ray scattering (GIWAXS) patterns indicated nucleation and crystal growth in the dropped solution and the following as-cast film. GIWAXS and Raman spectral data revealed that crystallization of PE was enhanced after complete evaporation of the p-xylene from the dropped solution. The [110] and [200] directions of the orthorhombic PE crystal became relatively parallel to the wafer surface with time, which implied that the flat-on lamellae with respect to the wafer surface were mainly formed in the as-cast film. On the other hand, grazing-incidence small-angle X-ray scattering (GISAXS) patterns implied formation of isolated lamellae in the dropped solution. The lamellae and amorphous might alternatively be stacked in the preferred direction perpendicular to the wafer surface. The synchrotron GISWAXS experimental method could be applied for kinetic study on hierarchical structure of polymer thin films.

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

Energy Technology Data Exchange (ETDEWEB)

Clément, N., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr; Han, X. L. [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincaré, 59652 Villeneuve d' Ascq (France); Larrieu, G., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr [Laboratory for Analysis and Architecture of Systems (LAAS), CNRS, Universite de Toulouse, 7 Avenue Colonel Roche, 31077 Toulouse (France)

2013-12-23

Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the heart of the wire, and the extremely low noise level is comparable to that of high quality epitaxial layers. Although contact noise can already be a source of poor transistor operation above threshold voltage for few nanowires, nanowire parallelization drastically reduces its impact.

Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

Science.gov (United States)

Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

2014-03-01

The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

Research on analytical model and design formulas of permanent magnetic bearings based on Halbach array with arbitrary segmented magnetized angle

International Nuclear Information System (INIS)

Wang, Nianxian; Wang, Dongxiong; Chen, Kuisheng; Wu, Huachun

2016-01-01

The bearing capacity of permanent magnetic bearings can be improved efficiently by using the Halbach array magnetization. However, the research on analytical model of Halbach array PMBs with arbitrary segmented magnetized angle has not been developed. The application of Halbach array PMBs has been limited by the absence of the analytical model and design formulas. In this research, the Halbach array PMBs with arbitrary segmented magnetized angle has been studied. The magnetization model of bearings is established. The magnetic field distribution model of the permanent magnet array is established by using the scalar magnetic potential model. On the basis of this, the bearing force model and the bearing stiffness model of the PMBs are established based on the virtual displacement method. The influence of the pair of magnetic rings in one cycle and the structure parameters of PMBs on the maximal bearing capacity and support stiffness characteristics are studied. The reference factors for the design process of PMBs have been given. Finally, the theoretical model and the conclusions are verified by the finite element analysis.

Determination of the Wetting Angle of Germanium and Germanium-Silicon Melts on Different Substrate Materials

Science.gov (United States)

Kaiser, Natalie; Croell, Arne; Szofran, F. R.; Cobb. S. D.; Dold, P.; Benz, K. W.

1999-01-01

During Bridgman growth of semiconductors detachment of the crystal and the melt meniscus has occasionally been observed, mainly under microgravity (microg) conditions. An important factor for detached growth is the wetting angle of the melt with the crucible material. High contact angles are more likely to result in detachment of the growing crystal from the ampoule wall. In order to achieve detached growth of germanium (Ge) and germanium-silicon (GeSi) crystals under 1g and microg conditions, sessile drop measurements were performed to determine the most suitable ampoule material as well as temperature dependence of the surface tension for GeSi. Sapphire, fused quartz, glassy carbon, graphite, SiC, pyrolytic Boron Nitride (pBN), AIN, and diamond were used as substrates. Furthermore, different cleaning procedures and surface treatments (etching, sandblasting, etc.) of the same substrate material and their effect on the wetting behavior were studied during these experiments. pBN and AIN substrates exhibited the highest contact angles with values around 170 deg.

Magnetic structure of cross-shaped permalloy arrays embedded in silicon wafers

International Nuclear Information System (INIS)

Machida, Kenji; Tezuka, Tomoyuki; Yamamoto, Takahiro; Ishibashi, Takayuki; Morishita, Yoshitaka; Koukitu, Akinori; Sato, Katsuaki

2005-01-01

This paper describes the observed magnetic structure and the micromagnetic simulation of cross-shaped, permalloy (Ni 80 Fe 20 ) arrays embedded in silicon wafers. The nano-scale-width, cross-shaped patterns were fabricated using the damascene technique, electron beam lithography, and chemical mechanical polishing. The magnetic poles were observed as two pairs of bright and dark spots at the ends of the crossed-bars using a magnetic force microscope. The force gradient distributions were simulated based on micromagnetic calculations and tip's stray field calculations using the integral equation method. This process of calculation successfully explains the appearance of the poles and complicated spin structure at the crossing region

Silicon photomultiplier arrays for the LHCb scintillating fibre tracker

CERN Multimedia

Girard, Olivier Goran; Kuonen, Axel Kevin; Stramaglia, Maria Elena

2017-01-01

For the LHCb detector upgrade in 2019, a large scale scintillating fibre tracker read out with silicon photomultipliers is under construction. The harsh radiation environment (neutron and ionising radiation), the 40MHz read-out rate of the trigger less system and the large detector surface of 320m2 impose many challenges. We present the results from lab tests with 1MeV electrons and from the SPS test facility at CERN for the mulitchannel SiPM array that combines peak photo-detection efficiency of 48% and extremely low correlated noise. The measurements were performed with detectors irradiated with neutrons up to a fluence of 12*1011 neq/cm2 and single photon detection was maintained. First results of the characterization of the pre-series of 500 detectors delivered by Hamamatsu and irradiation studies on a large sample will be included.

Use of an amorphous silicon EPID for measuring MLC calibration at varying gantry angle

International Nuclear Information System (INIS)

Clarke, M F; Budgell, G J

2008-01-01

Amorphous silicon electronic portal imaging devices (EPIDs) are used to perform routine quality control (QC) checks on the multileaf collimators (MLCs) at this centre. Presently, these checks are performed at gantry angle 0 0 and are considered to be valid for all other angles. Since therapeutic procedures regularly require the delivery of MLC-defined fields to the patient at a wide range of gantry angles, the accuracy of the QC checks at other gantry angles has been investigated. When the gantry is rotated to angles other than 0 0 it was found that the apparent pixel size measured using the EPID varies up to a maximum value of 0.0015 mm per pixel due to a sag in the EPID of up to 9.2 mm. A correction factor was determined using two independent methods at a range of gantry angles between 0 deg. and 360 deg. The EPID was used to measure field sizes (defined by both x-jaws and MLC) at a range of gantry angles and, after this correction had been applied, any residual gravitational sag was studied. It was found that, when fields are defined by the x-jaws and y-back-up jaws, no errors of greater than 0.5 mm were measured and that these errors were no worse when the MLC was used. It was therefore concluded that, provided the correction is applied, measurements of the field size are, in practical terms, unaffected by gantry angle. Experiments were also performed to study how the reproducibility of individual leaves is affected by gantry angle. Measurements of the relative position of each individual leaf (minor offsets) were performed at a range of gantry angles and repeated three times. The position reproducibility was defined by the RMS error in the position of each leaf and this was found to be 0.24 mm and 0.21 mm for the two leaf banks at a gantry angle of 0 0 . When measurements were performed at a range of gantry angles, these reproducibility values remained within 0.09 mm and 0.11 mm. It was therefore concluded that the calibration of the Elekta MLC is stable at

Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms

Energy Technology Data Exchange (ETDEWEB)

Carapezzi, Stefania; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, V.le Berti Pichat 6/2, Bologna (Italy); Irrera, Alessia [IPCF CNR, Viale Stagno D' Alcontres n. 37-98158, Messina, Italy and MATIS IMM CNR, Viale Santa Sofia n. 64, 95123 Catania (Italy)

2014-02-21

The huge amount of knowledge, and infrastructures, brought by silicon (Si) technology, make Si Nanowires (NWs) an ideal choice for nano-electronic Si-based devices. This, in turn, challenges the scientific research to adapt the technical and theoretical paradigms, at the base of established experimental techniques, in order to probe the properties of these systems. Metal-assisted wet-Chemical Etching (MaCE) [1, 2] is a promising fast, easy and cheap method to grow high aspect-ratio aligned Si NWs. Further, contrary to other fabrication methods, this method avoids the possible detrimental effects related to Au diffusion into NWs. We investigated the bandgap level diagram of MaCE Si NW arrays, phosphorous-doped, by means of Deep Level Transient Spectroscopy. The presence of both shallow and deep levels has been detected. The results have been examined in the light of the specificity of the MaCE growth. The study of the electronic levels in Si NWs is, of course, of capital importance in view of the integration of Si NW arrays as active layers in actual devices.

Silicon-on-insulator based nanopore cavity arrays for lipid membrane investigation.

Science.gov (United States)

Buchholz, K; Tinazli, A; Kleefen, A; Dorfner, D; Pedone, D; Rant, U; Tampé, R; Abstreiter, G; Tornow, M

2008-11-05

We present the fabrication and characterization of nanopore microcavities for the investigation of transport processes in suspended lipid membranes. The cavities are situated below the surface of silicon-on-insulator (SOI) substrates. Single cavities and large area arrays were prepared using high resolution electron-beam lithography in combination with reactive ion etching (RIE) and wet chemical sacrificial underetching. The locally separated compartments have a circular shape and allow the enclosure of picoliter volume aqueous solutions. They are sealed at their top by a 250 nm thin Si membrane featuring pores with diameters from 2 µm down to 220 nm. The Si surface exhibits excellent smoothness and homogeneity as verified by AFM analysis. As biophysical test system we deposited lipid membranes by vesicle fusion, and demonstrated their fluid-like properties by fluorescence recovery after photobleaching. As clearly indicated by AFM measurements in aqueous buffer solution, intact lipid membranes successfully spanned the pores. The nanopore cavity arrays have potential applications in diagnostics and pharmaceutical research on transmembrane proteins.

Simple fabrication of closed-packed IR microlens arrays on silicon by femtosecond laser wet etching

Science.gov (United States)

Meng, Xiangwei; Chen, Feng; Yang, Qing; Bian, Hao; Du, Guangqing; Hou, Xun

2015-10-01

We demonstrate a simple route to fabricate closed-packed infrared (IR) silicon microlens arrays (MLAs) based on femtosecond laser irradiation assisted by wet etching method. The fabricated MLAs show high fill factor, smooth surface and good uniformity. They can be used as optical devices for IR applications. The exposure and etching parameters are optimized to obtain reproducible microlens with hexagonal and rectangular arrangements. The surface roughness of the concave MLAs is only 56 nm. This presented method is a maskless process and can flexibly change the size, shape and the fill factor of the MLAs by controlling the experimental parameters. The concave MLAs on silicon can work in IR region and can be used for IR sensors and imaging applications.

Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

International Nuclear Information System (INIS)

Chen, J.; Sekiguchi, T.; Xie, R.; Ahmet, P.; Chikyo, T.; Yang, D.; Ito, S.; Yin, F.

2005-01-01

Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (<3%) at 300 K and strong (30-40%) at 100 K. In the contaminated mc-Si, SA GBs showed stronger EBIC contrast than Σ and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs

Performance of a PET detector module utilizing an array of silicon photodiodes to identify the crystal of interaction

International Nuclear Information System (INIS)

Moses, W.W.; Derenzo, S.E.; Nutt, R.; Digby, W.M.; Williams, C.W.; Andreaco, M.

1993-01-01

The authors initial performance results for a new multi-layer PET detector module consisting of an array of 3 mm square by 30 mm deep BGO crystals coupled on one end to a single photomultiplier tube and on the opposite end to an array of 3 mm square silicon photodiodes. The photomultiplier tube provides an accurate timing pulse and energy discrimination for all the crystals in the module, while the silicon photodiodes identify the crystal of interaction. When a single BGO crystal at +25 C is excited with 511 keV photons, the authors measure a photodiode signal centered at 700 electrons (e - ) with noise of 375 e - fwhm. When a four crystal/photodiode module is excited with a collimated line source of 511 keV photons, the crystal of interaction is correctly identified 82% of the time. The misidentification rate can be greatly reduced and an 8 x 8 crystal/photodiode module constructed by using thicker depletion layer photodiodes or cooling to 0 C

Determining the thickness of aliphatic alcohol monolayers covalently attached to silicon oxide surfaces using angle-resolved X-ray photoelectron spectroscopy

Science.gov (United States)

Lee, Austin W. H.; Kim, Dongho; Gates, Byron D.

2018-04-01

The thickness of alcohol based monolayers on silicon oxide surfaces were investigated using angle-resolved X-ray photoelectron spectroscopy (ARXPS). Advantages of using alcohols as building blocks for the formation of monolayers include their widespread availability, ease of handling, and stability against side reactions. Recent progress in microwave assisted reactions demonstrated the ease of forming uniform monolayers with alcohol based reagents. The studies shown herein provide a detailed investigation of the thickness of monolayers prepared from a series of aliphatic alcohols of different chain lengths. Monolayers of 1-butanol, 1-hexanol, 1-octanol, 1-decanol, and 1-dodecanol were each successfully formed through microwave assisted reactions and characterized by ARXPS techniques. The thickness of these monolayers consistently increased by ∼1.0 Å for every additional methylene (CH2) within the hydrocarbon chain of the reagents. Tilt angles of the molecules covalently attached to silicon oxide surfaces were estimated to be ∼35° for each type of reagent. These results were consistent with the observations reported for thiol based or silane based monolayers on either gold or silicon oxide surfaces, respectively. The results of this study also suggest that the alcohol based monolayers are uniform at a molecular level.

Broadband High Efficiency Fractal-Like and Diverse Geometry Silicon Nanowire Arrays for Photovoltaic Applications

Science.gov (United States)

AL-Zoubi, Omar H.

Solar energy has many advantages over conventional sources of energy. It is abundant, clean and sustainable. One way to convert solar energy directly into electrical energy is by using the photovoltaic solar cells (PVSC). Despite PVSC are becoming economically competitive, they still have high cost and low light to electricity conversion efficiency. Therefore, increasing the efficiency and reducing the cost are key elements for producing economically more competitive PVSC that would have significant impact on energy market and saving environment. A significant percentage of the PVSC cost is due to the materials cost. For that, thin films PVSC have been proposed which offer the benefits of the low amount of material and fabrication costs. Regrettably, thin film PVSC show poor light to electricity conversion efficiency because of many factors especially the high optical losses. To enhance conversion efficiency, numerous techniques have been proposed to reduce the optical losses and to enhance the absorption of light in thin film PVSC. One promising technique is the nanowire (NW) arrays in general and the silicon nanowire (SiNW) arrays in particular. The purpose of this research is to introduce vertically aligned SiNW arrays with enhanced and broadband absorption covering the entire solar spectrum while simultaneously reducing the amount of material used. To this end, we apply new concept for designing SiNW arrays based on employing diversity of physical dimensions, especially radial diversity within certain lattice configurations. In order to study the interaction of light with SiNW arrays and compute their optical properties, electromagnetic numerical modeling is used. A commercial numerical electromagnetic solver software package, high frequency structure simulation (HFSS), is utilized to model the SiNW arrays and to study their optical properties. We studied different geometries factors that affect the optical properties of SiNW arrays. Based on this study, we

Simultaneous alignment and Lorentz angle calibration in the CMS silicon tracker using Millepede II

CERN Document Server

Bartosik, Nazar

2013-01-01

The CMS silicon tracker consists of 25 684 sensors that provide measurements of trajectories of charged particles that are used by almost every physics analysis at CMS. In order to achieve high measurement precision, the positions and orientations of all sensors have to be determined very accurately. This is achieved by track-based alignment using the global fit approach of the Millepede II program. This approach is capable of determining about 200 000 parameters simultaneously.The alignment precision reached such a high level that even small calibration inaccuracies are noticeable. Therefore the alignment framework has been extended to treat position sensitive calibration parameters. Of special interest is the Lorentz angle which affects the hit positions due to the drift of the signal electrons in the magnetic field. We present the results from measurements of the Lorentz angle and its time dependence during full 2012 data taking period as well as general description of the alignment and calibration procedu...

The influence of passivation and photovoltaic properties of α-Si:H coverage on silicon nanowire array solar cells

Science.gov (United States)

2013-01-01

Silicon nanowire (SiNW) arrays for radial p-n junction solar cells offer potential advantages of light trapping effects and quick charge collection. Nevertheless, lower open circuit voltages (Voc) lead to lower energy conversion efficiencies. In such cases, the performance of the solar cells depends critically on the quality of the SiNW interfaces. In this study, SiNW core-shell solar cells have been fabricated by growing crystalline silicon (c-Si) nanowires via the metal-assisted chemical etching method and by depositing hydrogenated amorphous silicon (α-Si:H) via the plasma-enhanced chemical vapor deposition (PECVD) method. The influence of deposition parameters on the coverage and, consequently, the passivation and photovoltaic properties of α-Si:H layers on SiNW solar cells have been analyzed. PMID:24059343

Integration of silicon-based neural probes and micro-drive arrays for chronic recording of large populations of neurons in behaving animals.

Science.gov (United States)

Michon, Frédéric; Aarts, Arno; Holzhammer, Tobias; Ruther, Patrick; Borghs, Gustaaf; McNaughton, Bruce; Kloosterman, Fabian

2016-08-01

Understanding how neuronal assemblies underlie cognitive function is a fundamental question in system neuroscience. It poses the technical challenge to monitor the activity of populations of neurons, potentially widely separated, in relation to behaviour. In this paper, we present a new system which aims at simultaneously recording from a large population of neurons from multiple separated brain regions in freely behaving animals. The concept of the new device is to combine the benefits of two existing electrophysiological techniques, i.e. the flexibility and modularity of micro-drive arrays and the high sampling ability of electrode-dense silicon probes. Newly engineered long bendable silicon probes were integrated into a micro-drive array. The resulting device can carry up to 16 independently movable silicon probes, each carrying 16 recording sites. Populations of neurons were recorded simultaneously in multiple cortical and/or hippocampal sites in two freely behaving implanted rats. Current approaches to monitor neuronal activity either allow to flexibly record from multiple widely separated brain regions (micro-drive arrays) but with a limited sampling density or to provide denser sampling at the expense of a flexible placement in multiple brain regions (neural probes). By combining these two approaches and their benefits, we present an alternative solution for flexible and simultaneous recordings from widely distributed populations of neurons in freely behaving rats.

Evaluation of Matrix9 silicon photomultiplier array for small-animal PET

Science.gov (United States)

Du, Junwei; Schmall, Jeffrey P.; Yang, Yongfeng; Di, Kun; Roncali, Emilie; Mitchell, Gregory S.; Buckley, Steve; Jackson, Carl; Cherry, Simon R.

2015-01-01

Purpose: The MatrixSL-9-30035-OEM (Matrix9) from SensL is a large-area silicon photomultiplier (SiPM) photodetector module consisting of a 3 × 3 array of 4 × 4 element SiPM arrays (total of 144 SiPM pixels) and incorporates SensL’s front-end electronics board and coincidence board. Each SiPM pixel measures 3.16 × 3.16 mm2 and the total size of the detector head is 47.8 × 46.3 mm2. Using 8 × 8 polished LSO/LYSO arrays (pitch 1.5 mm) the performance of this detector system (SiPM array and readout electronics) was evaluated with a view for its eventual use in small-animal positron emission tomography (PET). Methods: Measurements of noise, signal, signal-to-noise ratio, energy resolution, flood histogram quality, timing resolution, and array trigger error were obtained at different bias voltages (28.0–32.5 V in 0.5 V intervals) and at different temperatures (5 °C–25 °C in 5 °C degree steps) to find the optimal operating conditions. Results: The best measured signal-to-noise ratio and flood histogram quality for 511 keV gamma photons were obtained at a bias voltage of 30.0 V and a temperature of 5 °C. The energy resolution and timing resolution under these conditions were 14.2% ± 0.1% and 4.2 ± 0.1 ns, respectively. The flood histograms show that all the crystals in the 1.5 mm pitch LSO array can be clearly identified and that smaller crystal pitches can also be resolved. Flood histogram quality was also calculated using different center of gravity based positioning algorithms. Improved and more robust results were achieved using the local 9 pixels for positioning along with an energy offset calibration. To evaluate the front-end detector readout, and multiplexing efficiency, an array trigger error metric is introduced and measured at different lower energy thresholds. Using a lower energy threshold greater than 150 keV effectively eliminates any mispositioning between SiPM arrays. Conclusions: In summary, the Matrix9 detector system can resolve

Evaluation of Matrix9 silicon photomultiplier array for small-animal PET

International Nuclear Information System (INIS)

Du, Junwei; Schmall, Jeffrey P.; Yang, Yongfeng; Di, Kun; Roncali, Emilie; Mitchell, Gregory S.; Buckley, Steve; Jackson, Carl; Cherry, Simon R.

2015-01-01

Purpose: The MatrixSL-9-30035-OEM (Matrix9) from SensL is a large-area silicon photomultiplier (SiPM) photodetector module consisting of a 3 × 3 array of 4 × 4 element SiPM arrays (total of 144 SiPM pixels) and incorporates SensL’s front-end electronics board and coincidence board. Each SiPM pixel measures 3.16 × 3.16 mm 2 and the total size of the detector head is 47.8 × 46.3 mm 2 . Using 8 × 8 polished LSO/LYSO arrays (pitch 1.5 mm) the performance of this detector system (SiPM array and readout electronics) was evaluated with a view for its eventual use in small-animal positron emission tomography (PET). Methods: Measurements of noise, signal, signal-to-noise ratio, energy resolution, flood histogram quality, timing resolution, and array trigger error were obtained at different bias voltages (28.0–32.5 V in 0.5 V intervals) and at different temperatures (5 °C–25 °C in 5 °C degree steps) to find the optimal operating conditions. Results: The best measured signal-to-noise ratio and flood histogram quality for 511 keV gamma photons were obtained at a bias voltage of 30.0 V and a temperature of 5 °C. The energy resolution and timing resolution under these conditions were 14.2% ± 0.1% and 4.2 ± 0.1 ns, respectively. The flood histograms show that all the crystals in the 1.5 mm pitch LSO array can be clearly identified and that smaller crystal pitches can also be resolved. Flood histogram quality was also calculated using different center of gravity based positioning algorithms. Improved and more robust results were achieved using the local 9 pixels for positioning along with an energy offset calibration. To evaluate the front-end detector readout, and multiplexing efficiency, an array trigger error metric is introduced and measured at different lower energy thresholds. Using a lower energy threshold greater than 150 keV effectively eliminates any mispositioning between SiPM arrays. Conclusions: In summary, the Matrix9 detector system can

Design of photonic phased array switches using nano electromechanical systems on silicon-on-insulator integration platform

Science.gov (United States)

Hussein, Ali Abdulsattar

This thesis presents an introduction to the design and simulation of a novel class of integrated photonic phased array switch elements. The main objective is to use nano-electromechanical (NEMS) based phase shifters of cascaded under-etched slot nanowires that are compact in size and require a small amount of power to operate them. The structure of the switch elements is organized such that it brings the phase shifting elements to the exterior sides of the photonic circuits. The transition slot couplers, used to interconnect the phase shifters, are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the switch element, which is taken as a ground. Phased array switch elements ranging from 2x2 up to 8x8 multiple-inputs/multiple-outputs (MIMO) are conveniently designed within reasonable footprints native to the current fabrication technologies. Chapter one presents the general layout of the various designs of the switch elements and demonstrates their novel features. This demonstration will show how waveguide disturbances in the interconnecting network from conventional switch elements can be avoided by adopting an innovative design. Some possible applications for the designed switch elements of different sizes and topologies are indicated throughout the chapter. Chapter two presents the design of the multimode interference (MMI) couplers used in the switch elements as splitters, combiners and waveguide crossovers. Simulation data and design methodologies for the multimode couplers of interest are detailed in this chapter. Chapter three presents the design and analysis of the NEMS-operated phase shifters. Both simulations and numerical analysis are utilized in the design of a 0°-180° capable NEMS-operated phase shifter. Additionally, the response of some of the designed photonic phased

SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

International Nuclear Information System (INIS)

Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M; Menichelli, D; Friedl, F

2014-01-01

Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam

SU-E-J-91: Novel Epitaxial Silicon Array for Quality Assurance in Photon and Proton Therapy

Energy Technology Data Exchange (ETDEWEB)

Talamonti, C; Zani, M; Scaringella, M; Bruzzi, M; Bucciolini, M [University of Florence, Firenze (Italy); Menichelli, D; Friedl, F [IBA Dosimetry, Schwarzenbruck, Bavaria (Germany)

2014-06-01

Purpose: to demonstrate suitability of a novel silicon array for measuring the dose properties of highly conformal photon and proton beams. Methods: prototype under test is a 24cm long linear array prototype, although the underlying technology is suitable to construct 2D arrays as well. It is based on a 64pixels monolithic sensor with 1mm pixel pitch, made of epitaxial ptype silicon. Thanks to design modularity, more sensors can be placed side by side without breaking pixel pitch. Flattened and unflattened photon beams, as well as proton radiation from a cyclotron in pencil beam scanning mode, were considered. Measurements of beam characteristics as percentage depth doses, dose profiles, output factors and energy response, which are necessary to deliver radiation with high precision and reliability, were performed. Results: Dose rate independence with photons was verified in the dose per pulse range 0.03 to 2mGy. Results clearly indicate nondependence of the detector sensitivity both for flattened and unflattened beams, with a variation of at most 0.5percentage. OFs were obtained for field with a lateral size ranging from 0.8cm to 16cm and the results are in good agreement with ion chamber A1SL, max difference less than 1.5percentage. Field sizes and beam penumbra were measured and compared to EBT film results. Concerning proton beams, sensitivity independence on dose rate was verified by changing the beam current in the interval 2-130Gy/s. Field sizes and beam penumbra measurements are in agreement with data taken with a scintillating 2D array with 0.5mm resolution IBA Lynx, and a better penumbra definition than an array of ionization chambers IBA MatriXX is reached. Conclusion: The device is a novel and valuable tool for QA both for photon and proton dose delivery. All measurements demonstrated its capability to measure with high spatial resolution many crucial properties of the RT beam.

Novel Implementations of Wideband Tightly Coupled Dipole Arrays for Wide-Angle Scanning

Science.gov (United States)

Yetisir, Ersin

Ultra-wideband (UWB) antennas and arrays are essential for high data rate communications and for addressing spectrum congestion. Tightly coupled dipole arrays (TCDAs) are of particular interest due to their low-profile, bandwidth and scanning range. But existing UWB (>3:1 bandwidth) arrays still suffer from limited scanning, particularly at angles beyond 45° from broadside. Almost all previous wideband TCDAs have employed dielectric layers above the antenna aperture to improve scanning while maintaining impedance bandwidth. But even so, these UWB arrays have been limited to no more than 60° away from broadside. In this work, we propose to replace the dielectric superstrate with frequency selective surfaces (FSS). In effect, the FSS is used to create an effective dielectric layer placed over the antenna array. FSS also enables anisotropic responses and more design freedom than conventional isotropic dielectric substrates. Another important aspect of the FSS is its ease of fabrication and low weight, both critical for mobile platforms (e.g. unmanned air vehicles), especially at lower microwave frequencies. Specifically, it can be fabricated using standard printed circuit technology and integrated on a single board with active radiating elements and feed lines. In addition to the FSS superstrate, a modified version of the stripline-based folded Marchand balun is presented. As usual the balun serves to match the 50Ω coaxial cable to the high input impedance ( 200Ω) at the terminals of array elements. Doing so, earlier Wilkinson power dividers, which degrade efficiency during E-plane scanning, are eliminated. To verify the proposed array concept, 12x12 TCDA prototype was fabricated using the modified balun and the new FSS superstrate layer. The design and experimental data showed an impedance bandwidth of 6.1:1 with VSWR<3.2. The latter VSWR was achieved even when scanning down to +/-60° in the H-plane, +/-70° in the D-plane and +/-75° in the E-plane. All array

Self-Cleaning Microcavity Array for Photovoltaic Modules.

Science.gov (United States)

Vüllers, Felix; Fritz, Benjamin; Roslizar, Aiman; Striegel, Andreas; Guttmann, Markus; Richards, Bryce S; Hölscher, Hendrik; Gomard, Guillaume; Klampaftis, Efthymios; Kavalenka, Maryna N

2018-01-24

Development of self-cleaning coatings is of great interest for the photovoltaic (PV) industry, as soiling of the modules can significantly reduce their electrical output and increase operational costs. We fabricated flexible polymeric films with novel disordered microcavity array (MCA) topography from fluorinated ethylene propylene (FEP) by hot embossing. Because of their superhydrophobicity with water contact angles above 150° and roll-off angles below 5°, the films possess self-cleaning properties over a wide range of tilt angles, starting at 10°, and contaminant sizes (30-900 μm). Droplets that impact the FEP MCA surface with velocities of the same order of magnitude as that of rain bounce off the surface without impairing its wetting properties. Additionally, the disordered MCA topography of the films enhances the performance of PV devices by improving light incoupling. Optical coupling of the FEP MCA films to a glass-encapsulated multicrystalline silicon solar cell results in 4.6% enhancement of the electrical output compared to that of an uncoated device.

Simple and polarization-independent Dammann grating based on all-dielectric nanorod array

Science.gov (United States)

Yang, Sen; Li, Chuang; Liu, Tongming; Da, Haixia; Feng, Rui; Tang, Donghua; Sun, Fangkui; Ding, Weiqiang

2017-09-01

In this work, we comprehensively investigate a Dammann grating (DG) that can generate a 5 × 5 diffraction spot array with an extending angle of 18^\\circ × 18^\\circ around the fiber communication wavelength of 1550 {nm}. The DG is a simple metasurface structure composed of a silicon cuboid nanorod array on a silica substrate, and only two different sizes of nanorods with square cross-sections and uniform spatial orientations are used. These simple units and this configuration are favorable in practice, and the C4 symmetry cross section of the nanorods ensures the polarization-independent operation of the DG. The phase modulation of the nanorods is achieved by the guiding mode propagating in them rather than electric or magnetic Mie-type resonance, which makes the design of the cuboid nanorods easy and robust. More importantly, the two-dimensional nanorod array is generated from a one-dimensional array, which further decreases the design and fabrication complexity.

Charge-partitioning study of a wide-pitch silicon micro-strip detector with a 64-channel CMOS preamplifier array

International Nuclear Information System (INIS)

Ikeda, H.; Tsuboyama, T.; Okuno, S.; Saitoh, Y.; Akamine, T.; Satoh, K.; Inoue, M.; Yamanaka, J.; Mandai, M.; Takeuchi, H.; Kitta, T.; Miyahara, S.; Kamiya, M.

1996-01-01

The wider pitch readout operation of a 50 μm-pitch double-sided silicon micro-strip detector has been studied specifically concerning its ohmic side. Every second readout and ganged configuration was examined by employing a newly developed 64-channel preamplifier array. The observed charge responses for collimated IR light were compared with a numerical model. (orig.)

Periodic molybdenum disc array for light trapping in amorphous silicon layer

Energy Technology Data Exchange (ETDEWEB)

Wang, Jiwei; Deng, Changkai [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China); Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Yang, Kang; Chen, Haiyan, E-mail: chenhy@sari.ac.cn; Li, Dongdong; Chen, Xiaoyuan [Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Haike Road, Shanghai, 201210 China (China); Ren, Wei, E-mail: renwei@shu.edu.cn [International Center of Quantum and Molecular Structures, Materials Genome Institute, and Department of Physics, Shanghai University, 99 Shangda Road, Shanghai, 200444 China (China)

2016-05-15

We demonstrate the light trapping effect in amorphous silicon (a-Si:H) layer by inserting a layer of periodic molybdenum disc array (MDA) between the a-Si:H layer and the quartz substrate, which forms a three-layer structure of Si/MDA/SiO{sub 2}. The MDA layer was fabricated by a new cost-effective method based on nano-imprint technology. Further light absorption enhancement was realized through altering the topography of MDA by annealing it at 700°C. The mechanism of light absorption enhancement in a-Si:H interfaced with MDA was analyzed, and the electric field distribution and light absorption curve of the different layers in the Si/MDA structure under light illumination of different wavelengths were simulated by employing numerical finite difference time domain (FDTD) solutions.

Surface roughening of silicon, thermal silicon dioxide, and low-k dielectric coral films in argon plasma

International Nuclear Information System (INIS)

Yin Yunpeng; Sawin, Herbert H.

2008-01-01

The surface roughness evolutions of single crystal silicon, thermal silicon dioxide (SiO 2 ), and low dielectric constant film coral in argon plasma have been measured by atomic force microscopy as a function of ion bombardment energy, ion impingement angle, and etching time in an inductively coupled plasma beam chamber, in which the plasma chemistry, ion energy, ion flux, and ion incident angle can be adjusted independently. The sputtering yield (or etching rate) scales linearly with the square root of ion energy at normal impingement angle; additionally, the angular dependence of the etching yield of all films in argon plasma followed the typical sputtering yield curve, with a maximum around 60 deg. -70 deg. off-normal angle. All films stayed smooth after etching at normal angle but typically became rougher at grazing angles. In particular, at grazing angles the rms roughness level of all films increased if more material was removed; additionally, the striation structure formed at grazing angles can be either parallel or transverse to the beam impingement direction, which depends on the off-normal angle. More interestingly, the sputtering caused roughness evolution at different off-normal angles can be qualitatively explained by the corresponding angular dependent etching yield curve. In addition, the roughening at grazing angles is a strong function of the type of surface; specifically, coral suffers greater roughening compared to thermal silicon dioxide

Effect of van der Waals forces on thermal conductance at the interface of a single-wall carbon nanotube array and silicon

Directory of Open Access Journals (Sweden)

Ya Feng

2014-12-01

Full Text Available Molecular dynamics simulations are performed to evaluate the effect of van der Waals forces among single-wall carbon nanotubes (SWNTs on the interfacial thermal conductance between a SWNT array and silicon substrate. First, samples of SWNTs vertically aligned on silicon substrate are simulated, where both the number and arrangement of SWNTs are varied. Results reveal that the interfacial thermal conductance of a SWNT array/Si with van der Waals forces present is higher than when they are absent. To better understand how van der Waals forces affect heat transfer through the interface between SWNTs and silicon, further constructs of one SWNT surrounded by different numbers of other ones are studied, and the results show that the interfacial thermal conductance of the central SWNT increases with increasing van der Waals forces. Through analysis of the covalent bonds and vibrational density of states at the interface, we find that heat transfer across the interface is enhanced with a greater number of chemical bonds and that improved vibrational coupling of the two sides of the interface results in higher interfacial thermal conductance. Van der Waals forces stimulate heat transfer at the interface.

Effect of surface texturing on superoleophobicity, contact angle hysteresis, and "robustness".

Science.gov (United States)

Zhao, Hong; Park, Kyoo-Chul; Law, Kock-Yee

2012-10-23

Previously, we reported the creation of a fluorosilane (FOTS) modified pillar array silicon surface comprising ~3-μm-diameter pillars (6 μm pitch with ~7 μm height) that is both superhydrophobic and superoleophobic, with water and hexadecane contact angles exceeding 150° and sliding angles at ~10° owing to the surface fluorination and the re-entrant structure in the side wall of the pillar. In this work, the effects of surface texturing (pillar size, spacing, and height) on wettability, contact angle hysteresis, and "robustness" are investigated. We study the static, advancing, and receding contact angles, as well as the sliding angles as a function of the solid area fraction. The results reveal that pillar size and pillar spacing have very little effect on the static and advancing contact angles, as they are found to be insensitive to the solid area fraction from 0.04 to ~0.4 as the pillar diameter varies from 1 to 5 μm and the center-to-center spacing varies from 4.5 to 12 μm. On the other hand, sliding angle, receding contact angle, and contact angle hysteresis are found to be dependent on the solid area fraction. Specifically, receding contact angle decreases and sliding angle and hysteresis increase as the solid area fraction increases. This effect can be attributable to the increase in pinning as the solid area fraction increases. Surface Evolver modeling shows that water wets and pins the pillar surface whereas hexadecane wets the pillar surface and then penetrates into the side wall of the pillar with the contact line pinning underneath the re-entrant structure. Due to the penetration of the hexadecane drop into the pillar structure, the effect on the receding contact angle and hysteresis is larger relative to that of water. This interpretation is supported by studying a series of FOTS pillar array surfaces with varying overhang thickness. With the water drop, the contact line is pinned on the pillar surface and very little overhang thickness effect

ISPA (imaging silicon pixel array) experiment

CERN Multimedia

Patrice Loïez

2002-01-01

The ISPA tube is a position-sensitive photon detector. It belongs to the family of hybrid photon detectors (HPD), recently developed by CERN and INFN with leading photodetector firms. HPDs confront in a vacuum envelope a photocathode and a silicon detector. This can be a single diode or a pixelized detector. The electrons generated by the photocathode are efficiently detected by the silicon anode by applying a high-voltage difference between them. ISPA tube can be used in high-energy applications as well as bio-medical and imaging applications.

SERS activity of Au nanoparticles coated on an array of carbon nanotube nested into silicon nanoporous pillar

International Nuclear Information System (INIS)

Jiang Weifen; Zhang Yanfeng; Wang Yusheng; Xu Lei; Li Xinjian

2011-01-01

A novel composite structure, Au nanoparticles coated on a nest-shaped array of carbon nanotube nested into a silicon nanoporous pillar array (Au/NACNT/Si-NPA), was fabricated for surface-enhanced Raman scattering (SERS). The morphology of the Au/NACNT/Si-NPA composite structure was characterized with the aid of scanning electron microscopy, X-ray diffraction instrumentation and Transmission electron microscopy. Compared with SERS of rhodamine 6G (R6G) adsorbed on SERS-active Au substrate reported, the SERS signals of R6G adsorbed on these gold nanoparticles were obviously improved. This was attributed to the enlarged specific surface area for adsorption of target molecules brought by the nest-shaped CNTs structure.

Graphene ribbon growth on structured silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Stoehr, Alexander; Link, Stefan; Starke, Ulrich [Max-Planck-Institut fuer Festkoerperforschung, Stuttgart (Germany); Baringhaus, Jens; Aprojanz, Johannes; Tegenkamp, Christoph [Institut fuer Festkoerperphysik, Leibniz Universitaet Hannover (Germany); Niu, Yuran [MAX IV Laboratory, Lund University (Sweden); present address: School of Physics and Astronomy, Cardiff University (United Kingdom); Zakharov, Alexei A. [MAX IV Laboratory, Lund University (Sweden); Chen, Chaoyu; Avila, Jose; Asensio, Maria C. [Synchrotron SOLEIL and Universite Paris-Saclay, Gif sur Yvette (France)

2017-11-15

Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge specific graphene nanoribbons (GNRs), which could be used as a base material for graphene transistors. We prepared periodic arrays of nanoscaled stripe-mesas on SiC surfaces using electron beam lithography and reactive ion etching. Subsequent epitaxial graphene growth by annealing is differentiated between the basal-plane mesas and the faceting stripe walls as monitored by means of atomic force microscopy (AFM). Microscopic low energy electron diffraction (μ-LEED) revealed that the graphene ribbons on the facetted mesa side walls grow in epitaxial relation to the basal-plane graphene with an armchair orientation at the facet edges. The π-band system of the ribbons exhibits linear bands with a Dirac like shape corresponding to monolayer graphene as identified by angle-resolved photoemission spectroscopy (ARPES). (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

Directory of Open Access Journals (Sweden)

Ya-Ju Lee

2014-05-01

Full Text Available High-efficient ZnO-based nanorod array light-emitting diodes (LEDs were grown by an oblique-angle deposition scheme. Due to the shadowing effect, the inclined ZnO vapor-flow was selectively deposited on the tip surfaces of pre-fabricated p-GaN nanorod arrays, resulting in the formation of nanosized heterojunctions. The LED architecture composed of the slanted n-ZnO film on p-GaN nanorod arrays exhibits a well-behaving current rectification of junction diode with low turn-on voltage of 4.7 V, and stably emits bluish-white luminescence with dominant peak of 390 nm under the operation of forward injection currents. In general, as the device fabrication does not involve passivation of using a polymer or sophisticated material growth techniques, the revealed scheme might be readily applied on other kinds of nanoscale optoelectronic devices.

Silicon-based tracking system: Mechanical engineering and design

International Nuclear Information System (INIS)

Miller, W.O.; Gamble, M.T.; Thompson, T.C.; Woloshun, K.A.; Reid, R.S.; Hanlon, J.A.; Michaud, F.D.; Dransfield, G.D.; Ziock, H.J.; Palounek, A.P.

1992-01-01

The Silicon Tracking System (STS) is composed of silicon strip detectors arranged by both in a cylindrical array and an array of flat panels about the interaction region. The cylindrical array is denoted the central region and the flat panel arrays, which are normal to the beam axis, we denoted the forward regions. The overall length of the silicon array is 5.16 m and the maximum diameter is 0.93 m. The Silicon Tracking System Conceptual Design Report, should be consulted for the body of analysis performed to quantify the present design concept. For the STS to achieve its physics goals, the mechanical structures and services must support 17 m 2 of silicon detectors and stabilize their positions to within 5 μm, uniformly cool the detector the system to O degrees C and at the same time potentially remove up to 13 kW of waste heat generated by the detector electronics, provide up to 3400 A of current to supply the 6.5 million electronics channels, and supply of control and data transmission lines for those channels. These objectives must be achieved in a high ionizing radiation environment, using virtually no structural mass and only low-Z materials. The system must be maintainable during its 10 year operating life

Thermally responsive silicon nanowire arrays for native/denatured-protein separation

International Nuclear Information System (INIS)

Wang Hongwei; Wang Yanwei; Yuan Lin; Wang Lei; Yang Weikang; Wu Zhaoqiang; Li Dan; Chen Hong

2013-01-01

We present our findings of the selective adsorption of native and denatured proteins onto thermally responsive, native-protein resistant poly(N-isopropylacrylamide) (PNIPAAm) decorated silicon nanowire arrays (SiNWAs). The PNIPAAm–SiNWAs surface, which shows very low levels of native-protein adsorption, favors the adsorption of denatured proteins. The amount of denatured-protein adsorption is higher at temperatures above the lower critical solution temperature (LCST) of PNIPAAm. Temperature cycling surrounding the LCST, which ensures against thermal denaturation of native proteins, further increases the amount of denatured-protein adsorption. Moreover, the PNIPAAm–SiNWAs surface is able to selectively adsorb denatured protein even from mixtures of different protein species; meanwhile, the amount of native proteins in solution is kept nearly at its original level. It is believed that these results will not only enrich current understanding of protein interactions with PNIPAAm-modified SiNWAs surfaces, but may also stimulate applications of PNIPAAm–SiNWAs surfaces for native/denatured protein separation. (paper)

Scalable gamma-ray camera for wide-area search based on silicon photomultipliers array

Science.gov (United States)

Jeong, Manhee; Van, Benjamin; Wells, Byron T.; D'Aries, Lawrence J.; Hammig, Mark D.

2018-03-01

Portable coded-aperture imaging systems based on scintillators and semiconductors have found use in a variety of radiological applications. For stand-off detection of weakly emitting materials, large volume detectors can facilitate the rapid localization of emitting materials. We describe a scalable coded-aperture imaging system based on 5.02 × 5.02 cm2 CsI(Tl) scintillator modules, each partitioned into 4 × 4 × 20 mm3 pixels that are optically coupled to 12 × 12 pixel silicon photo-multiplier (SiPM) arrays. The 144 pixels per module are read-out with a resistor-based charge-division circuit that reduces the readout outputs from 144 to four signals per module, from which the interaction position and total deposited energy can be extracted. All 144 CsI(Tl) pixels are readily distinguishable with an average energy resolution, at 662 keV, of 13.7% FWHM, a peak-to-valley ratio of 8.2, and a peak-to-Compton ratio of 2.9. The detector module is composed of a SiPM array coupled with a 2 cm thick scintillator and modified uniformly redundant array mask. For the image reconstruction, cross correlation and maximum likelihood expectation maximization methods are used. The system shows a field of view of 45° and an angular resolution of 4.7° FWHM.

Ductile cutting of silicon microstructures with surface inclination measurement and compensation by using a force sensor integrated single point diamond tool

International Nuclear Information System (INIS)

Chen, Yuan-Liu; Cai, Yindi; Shimizu, Yuki; Ito, So; Gao, Wei; Ju, Bing-Feng

2016-01-01

This paper presents a measurement and compensation method of surface inclination for ductile cutting of silicon microstructures by using a diamond tool with a force sensor based on a four-axis ultra-precision lathe. The X- and Y-directional inclinations of a single crystal silicon workpiece with respect to the X- and Y-motion axes of the lathe slides were measured respectively by employing the diamond tool as a touch-trigger probe, in which the tool-workpiece contact is sensitively detected by monitoring the force sensor output. Based on the measurement results, fabrication of silicon microstructures can be thus carried out directly along the tilted silicon workpiece by compensating the cutting motion axis to be parallel to the silicon surface without time-consuming pre-adjustment of the surface inclination or turning of a flat surface. A diamond tool with a negative rake angle was used in the experiment for superior ductile cutting performance. The measurement precision by using the diamond tool as a touch-trigger probe was investigated. Experiments of surface inclination measurement and ultra-precision ductile cutting of a micro-pillar array and a micro-pyramid array with inclination compensation were carried out respectively to demonstrate the feasibility of the proposed method. (paper)

Measurement and Simulation of the Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays

Science.gov (United States)

Howe, Christina L.; Weller, Robert A.; Reed, Robert A.; Sierawski, Brian D.; Marshall, Paul W.; Marshall, Cheryl J.; Mendenhall, Marcus H.; Schrimpf, Ronald D.

2007-01-01

The proton induced charge deposition in a well characterized silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, together with pile up, to accurately describe the experimental data. Simulation results reveal important high energy events not easily detected through experiment due to low statistics. The effects of each physical mechanism on the device response is shown for a single proton energy as well as a full proton space flux.

Chiral silicon nanostructures

International Nuclear Information System (INIS)

Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

2006-01-01

Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

A Stable Flexible Silicon Nanowire Array as Anode for High-Performance Lithium-ion Batteries

International Nuclear Information System (INIS)

Wang, Jiantao; Wang, Hui; Zhang, Bingchang; Wang, Yao; Lu, Shigang; Zhang, Xiaohong

2015-01-01

Highlights: • A flexible SiNW array in PDMS structure is designed and fabricated as Li-ion battery anode material. • The aggregation and fracture of SiNWs are alleviated by the flexible PDMS skeleton during the process of charge and discharge. • The loose SiO 2 shells coating on the SiNWscould form the protective layer in charge/discharge. • The as-obtain flexible SiNW array/PDMS composite exhibits a much better cycling stability. - Abstract: A Silicon nanowire (SiNW) array inserted into flexible poly-dimethylsiloxane (SiNW array/PDMS) composite structure as anode with high capacity and long-term cycling stability is synthesized by a cost-effective and scalable method. In this structure, the aggregation and fracture of SiNWs are alleviated by the flexible PDMS skeleton. Act as the main active component, the SiNWs are coated by loose SiO 2 shells. These loose SiO 2 shells not only provide space for the large volume changes of SiNW, but also react with the electrolyte and form the stable protective layer during the processes of the lithiation and delithiation. These two functions could improve the cycling stability and columbic efficiency of the SiNWs. The as-obtain flexible SiNW array/PDMS composite structure exhibits excellent long-term cycling stability with a specific capacity of 887.2 mA·h·g −1 and capacity retention of ∼83.4% over 350 cycles at 0.5 C rate compared with the fifteenth cycle. The design of this new structure provides a potential way for developing other functional composite materials

Fabrication of large area nanoprism arrays and their application for surface enhanced Raman spectroscopy

International Nuclear Information System (INIS)

Cui, B; Clime, L; Li, K; Veres, T

2008-01-01

This work demonstrates the fabrication of metallic nanoprism (triangular nanostructure) arrays using a low-cost and high-throughput process. In the method, the triangular structure is defined by the shadow of a pyramid during angle evaporation of a metal etching mask. The pyramids were created by nanoimprint lithography in polymethylmethacrylate (PMMA) using a mould having an inverse-pyramid-shaped hole array formed by KOH wet etching of silicon. Silver and gold nanoprism arrays with a period of 200 nm and an edge length of 100 nm have been fabricated and used as effective substrates for surface enhanced Raman spectroscopy (SERS) detection of rhodamine 6G (R6G) molecules. Numerical calculations confirmed the great enhancement of electric field near the sharp nanoprism corners, as well as the detrimental effect of the chromium adhesion layer on localized surface plasmon resonance. The current method can also be used to fabricate non-equilateral nanoprism and three-dimensional (3D) nanopyramid arrays, and it can be readily extended to other metals

Simple Approach to Superamphiphobic Overhanging Silicon Nanostructures

DEFF Research Database (Denmark)

Kumar, Rajendra; Mogensen, Klaus Bo; Bøggild, Peter

2010-01-01

with contact angles up to 152 degrees and roll-off angle down to 8 degrees. Such nonlithographic nanoscale overhanging Structures can also be added to silicon nanograss by deposition of a thin SiO2 layer, which equips the silicon rods with 100-300 nm sized overhanging Structures. This is a simple, fast...

Preparing magnetic yttrium iron garnet nanodot arrays by ultrathin anodic alumina template on silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Zheng, Hui; Han, Mangui, E-mail: han-mangui@yahoo.com; Deng, Longjiang [National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, Liang; Zheng, Peng; Qin, Huibin [Institute of Electron Device and Application, Hangzhou Dianzi University, Hangzhou 310008 (China); Wu, Qiong [Magnetism Key Laboratory of Zhejiang Province, China Jiliang University, Hangzhou 310018 (China)

2015-08-10

Ultrahigh density periodically ordered magnetic yttrium iron garnet (Y{sub 3}Fe{sub 5}O{sub 12}, YIG) nanodot arrays have been prepared by pulsed laser deposition through an ultrathin alumina mask (UTAM). UTAM having periodically ordered circularly shaped holes with 350 nm in diameter, 450 nm in inter-pore distance, and 700 nm in height has been prepared on silicon substrate. Furthermore, the microstructure and magnetic properties of YIG nanodot arrays have been characterized. Nanodot arrays with a sharp distribution in diameter centered at 340 nm with standard deviation of 10 nm have been fabricated. Moreover, typical hysteresis loops and ferromagnetic resonance spectra in in-plane and out-of-plane revealed that this unique structure greatly influences the magnetics properties of YIG. First, coercivity of YIG nanodot arrays in in-plane was increased about from 15 Oe of YIG films to 500 Oe. Then, the degree of uniformity about nanodot height decided that two or more resonance peaks in out-of-plane were detected in the spectra. The peak-to-peak linewidth values were about 94 Oe and 40 Oe in the parallel and perpendicular directions, respectively, which indicated that the values were larger by the two-magnon scattering. Consequently, this pattering method creates opportunities for studying physics in oxide nanomagnets and may be applied in spin-wave devices.

High-aspect-ratio microstructures with versatile slanting angles on silicon by uniform metal-assisted chemical etching

Science.gov (United States)

Li, Liyi; Zhang, Cheng; Tuan, Chia-Chi; Chen, Yun; Wong, C.-P.

2018-05-01

High-aspect-ratio (HAR) microstructures on silicon (Si) play key roles in photonics and electromechanical devices. However, it has been challenging to fabricate HAR microstructures with slanting profiles. Here we report successful fabrication of uniform HAR microstructures with controllable slanting angles on (1 0 0)-Si by slanted uniform metal-assisted chemical etching (SUMaCE). The trenches have width of 2 µm, aspect ratio greater than 20:1 and high geometric uniformity. The slanting angles can be adjusted between 2-70° with respect to the Si surface normal. The results support a fundamental hypothesis that under the UMaCE condition, the preferred etching direction is along the normal of the thin film catalysts, regardless of the relative orientation of the catalyst to Si substrates or the crystalline orientation of the substrates. The SUMaCE method paves the way to HAR 3D microfabrication with arbitrary slanting profiles inside Si.

A novel lab-on-chip platform with integrated solid phase PCR and Supercritical Angle Fluorescence (SAF) microlens array for highly sensitive and multiplexed pathogen detection

DEFF Research Database (Denmark)

Hung, Tran Quang; Chin, Wai Hoe; Sun, Yi

2016-01-01

technology. In this paper, we addressed this challenge by combining the SP-PCR with super critical angle fluorescence (SAF) microlens array embedded in a microchip. We fabricated miniaturized SAF microlens array as part of a microfluidic chamber in thermoplastic material and performed multiplexed SP...

Construction and performance of silicon detectors for the small angle spectrometers of the collider detector of Fermilab

International Nuclear Information System (INIS)

Apollinari, G.; Bedeschi, F.; Bellettini, G.; Bosi, F.; Bosisio, L.; Cervelli, F.; Del Fabbro, R.; Dell'Orso, M.; Di Virgilio, A.; Focardi, E.; Giannetti, P.; Giorgi, M.; Menzione, A.; Ristori, L.; Scribano, A.; Sestini, P.; Stefanini, A.; Tonelli, G.; Zetti, F.; Bertolucci, S.; Cordelli, M.; Curatolo, M.; Dulach, B.; Esposito, B.; Giromini, P.; Miscetti, S.; Sansoni, A.

1987-01-01

The manufacturing process of a series of position sensitive silicon detectors is described together with the tests performed to optimize the performance of the detectors. The detectors are Schottky diodes with strips on the ohmic contact which allow to determine the position of the incoming ionizing particles by charge partition. Four detectors were assembled in a telescope and tested inside the vacuum pipe of the Tevatron Collider at Fermilab. The system is a prototype of the Small Angle Silicon Spectrometer, designed primarily to study p-anti p elastic and diffractive cross sections, and is a part of the Collider Detector of Fermilab (CDF). Several tests were performed to check the efficiency and the linearity of response of various regions of the detectors. Scans of the beam halo were also done in high and low β optics to check how close to the beam the detectors could be operated. Finally, the dependence of the detector response on temperature and integrated radiation dose was investigated. (orig.)

Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

International Nuclear Information System (INIS)

Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

2002-01-01

Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a ∼10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38

Photoemission and photo-field-emission from photocathodes with arrays of silicon tips under continuous and pulsed lasers action

International Nuclear Information System (INIS)

Laguna, M.

1995-11-01

The electron machines's development and improvement go through the discovery of new electron sources of high brightness. After reminding the interests in studying silicon cathodes with array of tips as electron sources, I describe, in the three steps model, the main phenomenological features related to photoemission and photoemission and photo-field-emission from a semi-conductor. the experimental set-ups used for the measurements reported in chapter four, five and six are described in chapter three. In chapter three. In chapter four several aspects of photo-field-emission in continuous and nanosecond regimes, studied on the Clermont-Ferrand's test bench are tackled. We have measured quantum efficacies of 0.4 percent in the red (1.96 eV). Temporal responses in the nanoseconds range (10 ns) were observed with the Nd: YLF laser. With the laser impinging at an oblique angle we obtained ratios of photocurrent to dark current of the order of twenty. The issue of the high energy extracted photocurrent saturation is addressed and I give a preliminary explanation. In collaboration with the L.A.L. (Laboratoire de l'Accelerateur Lineaire) some tests with shortened pulsed laser beam (Nd: YAG laser 35 ps) were performed. Satisfactory response times have been obtained within the limitation of the scope (400 ps). (authors). 101 refs. 93 figs., 27 tabs., 3 photos., 1 append

Quasi-optical antenna-mixer-array design for terahertz frequencies

Science.gov (United States)

Guo, Yong; Potter, Kent A.; Rutledge, David B.

1992-01-01

A new quasi-optical antenna-mixer-array design for terahertz frequencies is presented. In the design, antenna and mixer are combined into an entity, based on the technology in which millimeter-wave horn antenna arrays have been fabricated in silicon wafers. It consists of a set of forward- and backward-looking horns made with a set of silicon wafers. The front side is used to receive incoming signal, and the back side is used to feed local oscillator signal. Intermediate frequency is led out from the side of the array. Signal received by the horn array is picked up by antenna probes suspended on thin silicon-oxynitride membranes inside the horns. Mixer diodes will be located on the membranes inside the horns. Modeling of such an antenna-mixer-array design is done on a scaled model at microwave frequencies. The impedance matching, RF and LO isolation, and patterns of the array have been tested and analyzed.

Patterned Array of Poly(ethylene glycol Silane Monolayer for Label-Free Detection of Dengue

Directory of Open Access Journals (Sweden)

Nor Zida Rosly

2016-08-01

Full Text Available In the present study, the construction of arrays on silicon for naked-eye detection of DNA dengue was demonstrated. The array was created by exposing a polyethylene glycol (PEG silane monolayer to 254 nm ultraviolet (UV light through a photomask. Formation of the PEG silane monolayer and photomodifed surface properties was thoroughly characterized by using atomic force microscopy (AFM, X-ray photoelectron spectroscopy (XPS, and contact angle measurements. The results of XPS confirmed that irradiation of ultraviolet (UV light generates an aldehyde functional group that offers conjugation sites of amino DNA probe for detection of a specific dengue virus target DNA. Employing a gold enhancement process after inducing the electrostatic interaction between positively charged gold nanoparticles and the negatively charged target DNA hybridized to the DNA capture probe allowed to visualize the array with naked eye. The developed arrays demonstrated excellent performance in diagnosis of dengue with a detection limit as low as 10 pM. The selectivity of DNA arrays was also examined using a single base mismatch and noncomplementary target DNA.

Microneedles array with biodegradable tips for transdermal drug delivery

Science.gov (United States)

Iliescu, Ciprian; Chen, Bangtao; Wei, Jiashen; Tay, Francis E. H.

2008-12-01

The paper presented an enhancement solution for transdermal drug delivery using microneedles array with biodegradable tips. The microneedles array was fabricated by using deep reactive ion etching (DRIE) and the biodegradable tips were made to be porous by electrochemical etching process. The porous silicon microneedle tips can greatly enhance the transdermal drug delivery in a minimum invasion, painless, and convenient manner, at the same time; they are breakable and biodegradable. Basically, the main problem of the silicon microneedles consists of broken microneedles tips during the insertion. The solution proposed is to fabricate the microneedle tip from a biodegradable material - porous silicon. The silicon microneedles are fabricated using DRIE notching effect of reflected charges on mask. The process overcomes the difficulty in the undercut control of the tips during the classical isotropic silicon etching process. When the silicon tips were formed, the porous tips were then generated using a classical electrochemical anodization process in MeCN/HF/H2O solution. The paper presents the experimental results of in vitro release of calcein and BSA with animal skins using a microneedle array with biodegradable tips. Compared to the transdermal drug delivery without any enhancer, the microneedle array had presented significant enhancement of drug release.

Ordered array of ω particles in β-Ti matrix studied by small-angle X-ray scattering

International Nuclear Information System (INIS)

Šmilauerová, J.; Harcuba, P.; Stráský, J.; Stráská, J.; Janeček, M.; Pospíšil, J.; Kužel, R.; Brunátová, T.; Holý, V.; Ilavský, J.

2014-01-01

Nanosized particles of ω phase in a β-Ti alloy were investigated by small-angle X-ray scattering using synchrotron radiation. We demonstrated that the particles are spontaneously weakly ordered in a three-dimensional cubic array along the 〈100〉-directions in the β-Ti matrix. The small-angle scattering data fit well to a three-dimensional short-range-order model; from the fit we determined the evolution of the mean particle size and mean distance between particles during ageing. The self-ordering of the particles is explained by elastic interaction between the particles, since the relative positions of the particles coincide with local minima of the interaction energy. We performed numerical Monte Carlo simulation of the particle ordering and we obtained a good agreement with the experimental data

Quantifying the Traction Force of a Single Cell by Aligned Silicon Nanowire Array

KAUST Repository

Li, Zhou

2009-10-14

The physical behaviors of stationary cells, such as the morphology, motility, adhesion, anchorage, invasion and metastasis, are likely to be important for governing their biological characteristics. A change in the physical properties of mammalian cells could be an indication of disease. In this paper, we present a silicon-nanowire-array based technique for quantifying the mechanical behavior of single cells representing three distinct groups: normal mammalian cells, benign cells (L929), and malignant cells (HeLa). By culturing the cells on top of NW arrays, the maximum traction forces of two different tumor cells (HeLa, L929) have been measured by quantitatively analyzing the bending of the nanowires. The cancer cell exhibits a larger traction force than the normal cell by ∼20% for a HeLa cell and ∼50% for a L929 cell. The traction forces have been measured for the L929 cells and mechanocytes as a function of culture time. The relationship between cells extending area and their traction force has been investigated. Our study is likely important for studying the mechanical properties of single cells and their migration characteristics, possibly providing a new cellular level diagnostic technique. © 2009 American Chemical Society.

Organization of silicon nanocrystals by localized electrochemical etching

International Nuclear Information System (INIS)

Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

2009-01-01

An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

Asymmetric liquid wetting and spreading on surfaces with slanted micro-pillar arrays

KAUST Repository

Yang, Xiaoming

2013-01-01

Uni-directional liquid spreading on asymmetric silicone-fabricated nanostructured surfaces has recently been reported. In this work, uniformly deflected polydimethylsiloxane (PDMS) micro-pillars covered with silver films were fabricated. Asymmetric liquid wetting and spreading behaviors in a preferential direction were observed on the slanted micro-pillar surfaces and a micro-scale thin liquid film advancing ahead of the bulk liquid droplet was clearly observed by high-speed video imaging. It is found that the slanted micro-pillar array is able to promote or inhibit the propagation of this thin liquid film in different directions by the asymmetric capillary force. The spreading behavior of the bulk liquid was guided and finally controlled by this micro-scale liquid film. Different spreading regimes are defined by the relationship between the liquid intrinsic contact angle and the critical angles, which were determined by the pillar height, pillar deflection angle and inter-pillar spacing. © The Royal Society of Chemistry 2013.

Development of a PET detector module incorporating a silicon photodiode array

International Nuclear Information System (INIS)

Rosenfeld, A.B.; Takacs, G.J.; Lerch, M.L.F.; Simmonds, P.E.

2000-01-01

Full text: We are developing a new Positron Emission Tomography (PET) detection sub-module with depth of interaction capability. The new sub-module is simple and robust to minimise module assembly complications and is completely independent of photomultiplier tubes. The new sub-module has also been designed to maximise its flexibility for easy sub-module coupling so as to form a complete, customised, detection module to be used in PET scanners dedicated to human brain and breast, and small animal studies. Blue enhanced, silicon 8x8 detector arrays are used to read out the scintillation crystals, and form the basis of the new module. The new detectors were designed by the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong in collaboration with the High Energy Physics Department, University of Melbourne and produced by SPO D etector , Ukraine. Complementing the work on the silicon photodetectors, we have also carried out simulations of the propagation of the scintillation light in the crystals, and the effect of crystal dimensions and surface treatment on the distribution of light detected by the photodiode array. The distribution of light over the photodiodes has then been used to test various algorithms for calculating the point of interaction of the gamma ray in the crystal. Simulations of the light propagation show that for a crystal of dimensions 25mm x 25mm x 3mm, it is possible to determine the point of interaction in 2 dimensions with an average accuracy of just over 0.5mm. The resulting photon distribution detected by the array. The surface treatment, while having a large effect on the light output, does not have a great effect on the accuracy. If these dimensions change to 25mm x 25mm x 6mm then the surface conditions have a greater effect on the accuracy. It is possible however, with careful surface treatment, to achieve an accuracy of around 0.6mm, only marginally worse than the case for the 3mm thick crystal. Gamma ray

Metasurface Enabled Wide-Angle Fourier Lens.

Science.gov (United States)

Liu, Wenwei; Li, Zhancheng; Cheng, Hua; Tang, Chengchun; Li, Junjie; Zhang, Shuang; Chen, Shuqi; Tian, Jianguo

2018-06-01

Fourier optics, the principle of using Fourier transformation to understand the functionalities of optical elements, lies at the heart of modern optics, and it has been widely applied to optical information processing, imaging, holography, etc. While a simple thin lens is capable of resolving Fourier components of an arbitrary optical wavefront, its operation is limited to near normal light incidence, i.e., the paraxial approximation, which puts a severe constraint on the resolvable Fourier domain. As a result, high-order Fourier components are lost, resulting in extinction of high-resolution information of an image. Other high numerical aperture Fourier lenses usually suffer from the bulky size and costly designs. Here, a dielectric metasurface consisting of high-aspect-ratio silicon waveguide array is demonstrated experimentally, which is capable of performing 1D Fourier transform for a large incident angle range and a broad operating bandwidth. Thus, the device significantly expands the operational Fourier space, benefitting from the large numerical aperture and negligible angular dispersion at large incident angles. The Fourier metasurface will not only facilitate efficient manipulation of spatial spectrum of free-space optical wavefront, but also be readily integrated into micro-optical platforms due to its compact size. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The status of lightweight photovoltaic space array technology based on amorphous silicon solar cells

Science.gov (United States)

Hanak, Joseph J.; Kaschmitter, Jim

1991-01-01

Ultralight, flexible photovoltaic (PV) array of amorphous silicon (a-Si) was identified as a potential low cost power source for small satellites. A survey was conducted of the status of the a-Si PV array technology with respect to present and future performance, availability, cost, and risks. For existing, experimental array blankets made of commercial cell material, utilizing metal foil substrates, the Beginning of Life (BOL) performance at Air Mass Zero (AM0) and 35 C includes total power up to 200 W, power per area of 64 W/sq m and power per weight of 258 W/kg. Doubling of power per weight occurs when polyimide substrates are used. Estimated End of Life (EOL) power output after 10 years in a nominal low earth orbit would be 80 pct. of BOL, the degradation being due to largely light induced effects (-10 to -15 pct.) and in part (-5 pct.) to space radiation. Predictions for the year 1995 for flexible PV arrays, made on the basis of published results for rigid a-Si modules, indicate EOL power output per area and per weight of 105 W/sq m and 400 W/kg, respectively, while predictions for the late 1990s based on existing U.S. national PV program goals indicate EOL values of 157 W/sq m and 600 W/kg. Cost estimates by vendors for 200 W ultralight arrays in volume of over 1000 units range from $100/watt to $125/watt. Identified risks include the lack of flexible, space compatible encapsulant, the lack of space qualification effort, recent partial or full acquisitions of US manufacturers of a-Si cells by foreign firms, and the absence of a national commitment for a long range development program toward developing of this important power source for space.

An Antireflective Nanostructure Array Fabricated by Nanosilver Colloidal Lithography on a Silicon Substrate

Directory of Open Access Journals (Sweden)

Park Seong-Je

2010-01-01

Full Text Available Abstract An alternative method is presented for fabricating an antireflective nanostructure array using nanosilver colloidal lithography. Spin coating was used to produce the multilayered silver nanoparticles, which grew by self-assembly and were transformed into randomly distributed nanosilver islands through the thermodynamic action of dewetting and Oswald ripening. The average size and coverage rate of the islands increased with concentration in the range of 50–90 nm and 40–65%, respectively. The nanosilver islands were critically affected by concentration and spin speed. The effects of these two parameters were investigated, after etching and wet removal of nanosilver residues. The reflection nearly disappeared in the ultraviolet wavelength range and was 17% of the reflection of a bare silicon wafer in the visible range.

Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures.

Science.gov (United States)

Huang, Yi-Fan; Chattopadhyay, Surojit; Jen, Yi-Jun; Peng, Cheng-Yu; Liu, Tze-An; Hsu, Yu-Kuei; Pan, Ci-Ling; Lo, Hung-Chun; Hsu, Chih-Hsun; Chang, Yuan-Huei; Lee, Chih-Shan; Chen, Kuei-Hsien; Chen, Li-Chyong

2007-12-01

Nature routinely produces nanostructured surfaces with useful properties, such as the self-cleaning lotus leaf, the colour of the butterfly wing, the photoreceptor in brittlestar and the anti-reflection observed in the moth eye. Scientists and engineers have been able to mimic some of these natural structures in the laboratory and in real-world applications. Here, we report a simple aperiodic array of silicon nanotips on a 6-inch wafer with a sub-wavelength structure that can suppress the reflection of light at a range of wavelengths from the ultraviolet, through the visible part of the spectrum, to the terahertz region. Reflection is suppressed for a wide range of angles of incidence and for both s- and p-polarized light. The antireflection properties of the silicon result from changes in the refractive index caused by variations in the height of the silicon nanotips, and can be simulated with models that have been used to explain the low reflection from moth eyes. The improved anti-reflection properties of the surfaces could have applications in renewable energy and electro-optical devices for the military.

Stretchable and foldable silicon-based electronics

KAUST Repository

Cavazos Sepulveda, Adrian Cesar

2017-03-30

Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

Stretchable and foldable silicon-based electronics

KAUST Repository

Cavazos Sepulveda, Adrian Cesar; Diaz Cordero, M. S.; Carreno, Armando Arpys Arevalo; Nassar, Joanna M.; Hussain, Muhammad Mustafa

2017-01-01

Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

Micromachined silicon acoustic delay line with 3D-printed micro linkers and tapered input for improved structural stability and acoustic directivity

International Nuclear Information System (INIS)

Cho, Y; Kumar, A; Xu, S; Zou, J

2016-01-01

Recent studies have shown that micromachined silicon acoustic delay lines can provide a promising solution to achieve real-time photoacoustic tomography without the need for complex transducer arrays and data acquisition electronics. To achieve deeper imaging depth and wider field of view, a longer delay time and therefore delay length are required. However, as the length of the delay line increases, it becomes more vulnerable to structural instability due to reduced mechanical stiffness. In this paper, we report the design, fabrication, and testing of a new silicon acoustic delay line enhanced with 3D printed polymer micro linker structures. First, mechanical deformation of the silicon acoustic delay line (with and without linker structures) under gravity was simulated by using finite element method. Second, the acoustic crosstalk and acoustic attenuation caused by the polymer micro linker structures were evaluated with both numerical simulation and ultrasound transmission testing. The result shows that the use of the polymer micro linker structures significantly improves the structural stability of the silicon acoustic delay lines without creating additional acoustic attenuation and crosstalk. In addition, the improvement of the acoustic acceptance angle of the silicon acoustic delay lines was also investigated to better suppress the reception of unwanted ultrasound signals outside of the imaging plane. These two improvements are expected to provide an effective solution to eliminate current limitations on the achievable acoustic delay time and out-of-plane imaging resolution of micromachined silicon acoustic delay line arrays. (paper)

First results from the SLD silicon calorimeters

International Nuclear Information System (INIS)

Berridge, S.C.; Bugg, W.M.; Kroeger, R.S.; Weidemann, A.W.; White, S.L.

1992-07-01

The small-angle calorimeters of the SLD were successfully operated during the recent SLC engineering run. The Luminosity Monitor and Small-Angle Tagger (LMSAT) covers the angular region between 28 and 68 milliradians from the beam axis, while the Medium-Angle Silicon Calorimeter (MASC) covers the 68--190 milliradian region. Both are silicon-tungsten sampling calorimeters; the LMSAT employs 23 layers of 0.86 X 0 sampling, while the MASC has 10 layers of 1.74 X 0 sampling. We present results from the first run of the SLC with the SLD on beamline

ISPA (imaging silicon pixel array) experiment

CERN Multimedia

Patrice Loïez

2002-01-01

The bump-bonded silicon pixel detector, developed at CERN by the EP-MIC group, is shown here in its ceramic carrier. Both represent the ISPA-tube anode. The chip features between 1024 (called OMEGA-1) and 8196 (ALICE-1) active pixels.

Silicon nanowire hybrid photovoltaics

KAUST Repository

Garnett, Erik C.

2010-06-01

Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

Silicon nanowire hybrid photovoltaics

KAUST Repository

Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

2010-01-01

Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

Scanning tunnelling microscope fabrication of phosphorus array in silicon for a nuclear spin quantum computer

International Nuclear Information System (INIS)

O'Brien, J.L.; Schofield, S.R.; Simmons, M.Y.; Clark, R.G.; Dzurak, A.S.; Prawer, S.; Adrienko, I.; Cimino, A.

2000-01-01

Full text: In the vigorous worldwide effort to experimentally build a quantum computer, recent intense interest has focussed on solid state approaches for their promise of scalability. Particular attention has been given to silicon-based proposals that can readily be integrated into conventional computing technology. For example the Kane design uses the well isolated nuclear spin of phosphorous donor nuclei (I=1/2) as the qubits embedded in isotopically pure 28 Si (I=0). We demonstrate the ability to fabricate a precise array of P atoms on a clean Si surface with atomic-scale resolution compatible with the fabrication of the Kane quantum computer

Performance studies of X3 silicon detectors for the future ELISSA array at ELI-NP

Science.gov (United States)

Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; State, A.

2018-05-01

ELISSA is an array of silicon strip detectors under construction at the ELI-NP facility for measurements of photodissociation reactions using high-brilliance, quasi monoenergetic gamma beams. The detection system consists of 35 single-sided position-sensitive X3 detectors arranged in a cylindrical configuration and eight QQQ3 detectors as end-caps. A batch of forty X3 detectors have been tested at ELI-NP. The energy and position resolution, ballistic deficit, leakage currents, and depletion voltage were measured and analyzed. Measurements of the energy resolution were carried out using two read-out electronic chains, one based on multichannel preamplifiers and another based on multiplexers.

Proceedings of the Flat-Plate Solar Array Project Workshop on Crystal Gowth for High-Efficiency Silicon Solar Cells

Science.gov (United States)

Dumas, K. A. (Editor)

1985-01-01

A Workshop on Crystal Growth for High-Efficiency Silicon Solar Cells was held December 3 and 4, 1984, in San Diego, California. The Workshop offered a day and a half of technical presentations and discussions and an afternoon session that involved a panel discussion and general discussion of areas of research that are necessary to the development of materials for high-efficiency solar cells. Topics included the theoretical and experimental aspects of growing high-quality silicon crystals, the effects of growth-process-related defects on photovoltaic devices, and the suitability of various growth technologies as cost-effective processes. Fifteen invited papers were presented, with a discussion period following each presentation. The meeting was organized by the Flat-Plate Solar Array Project of the Jet Propulsion Laboratory. These Proceedings are a record of the presentations and discussions, edited for clarity and continuity.

SWNT array resonant gate MOS transistor.

Science.gov (United States)

Arun, A; Campidelli, S; Filoramo, A; Derycke, V; Salet, P; Ionescu, A M; Goffman, M F

2011-02-04

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

SWNT array resonant gate MOS transistor

International Nuclear Information System (INIS)

Arun, A; Salet, P; Ionescu, A M; Campidelli, S; Filoramo, A; Derycke, V; Goffman, M F

2011-01-01

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

Directory of Open Access Journals (Sweden)

Yulong Zhang

2018-05-01

Full Text Available High performance silicon combined structure (micropillar with Cu nanoparticles solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

Science.gov (United States)

Zhang, Yulong; Fan, Zhiqiang; Zhang, Weijia; Ma, Qiang; Jiang, Zhaoyi; Ma, Denghao

2018-05-01

High performance silicon combined structure (micropillar with Cu nanoparticles) solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

Pulse shape discrimination using EJ-299-33 plastic scintillator coupled with a Silicon Photomultiplier array

International Nuclear Information System (INIS)

Liao, Can; Yang, Haori

2015-01-01

Recent developments in organic plastic scintillators capable of pulse shape discrimination (PSD) have gained much interest. Novel photon detectors, such as Silicon Photomultipliers (SiPMs), offer numerous advantages and can be used as an alternative to conventional photo multiplier tubes (PMTs) in many applications. In this work, we evaluate the PSD performance of the EJ-299-33 plastic scintillator coupled with a SiPM array. 2D PSD plots as well as the Figure of Merit (FOM) parameters are presented to demonstrate the PSD capability of EJ-299-33 using a SiPM as the light sensor. The best FOM of 0.76 was observed with a 1.0 MeVee (MeV-electron-equivalent) energy threshold, despite the high noise level of the SiPM array. A high-speed digital oscilloscope was used to acquire data, which was then processed offline in MATLAB. A performance comparison between two different PSD algorithms was carried out. The dependence of PSD quality on the sampling rate was also evaluated, stimulated by the interest to implement this setup for handheld applications where power consumption is crucial

Formation of patterned arrays of Au nanoparticles on SiC surface by template confined dewetting of normal and oblique deposited nanoscale films

Energy Technology Data Exchange (ETDEWEB)

Ruffino, F., E-mail: francesco.ruffino@ct.infn.it; Grimaldi, M.G.

2013-06-01

We report on the formation of patterned arrays of Au nanoparticles (NPs) on 6H SiC surface. To this end, we exploit the thermal-induced dewetting properties of a template confined deposited nanoscale Au film. In this approach, the Au surface pattern order, on the SiC substrate, is established by a template confined deposition using a micrometric template. Then, a dewetting process of the patterned Au film is induced by thermal processes. We compare the results, about the patterns formation, obtained for normal and oblique deposited Au films. We show that the normal and oblique depositions, through the same template, originate different patterns of the Au film. As a consequence of these different starting patterns, after the thermal processes, different patterns for the arrays of NPs originating from the dewetting mechanisms are obtained. For each fixed deposition angle α, the pattern evolution is analyzed, by scanning electron microscopy, as a function of the annealing time at 1173 K (900 °C). From these analyses, quantitative evaluations on the NPs size evolution are drawn. - Highlights: • Micrometric template-confined nanoscale gold films are deposited on silicon carbide. • The dewetting process of template-confined gold films on silicon carbide is studied. • Comparison of dewetting process of normal and oblique deposited gold films is drawn. • Patterned arrays of gold nanoparticles on silicon carbide surface are produced.

Formation of patterned arrays of Au nanoparticles on SiC surface by template confined dewetting of normal and oblique deposited nanoscale films

International Nuclear Information System (INIS)

Ruffino, F.; Grimaldi, M.G.

2013-01-01

We report on the formation of patterned arrays of Au nanoparticles (NPs) on 6H SiC surface. To this end, we exploit the thermal-induced dewetting properties of a template confined deposited nanoscale Au film. In this approach, the Au surface pattern order, on the SiC substrate, is established by a template confined deposition using a micrometric template. Then, a dewetting process of the patterned Au film is induced by thermal processes. We compare the results, about the patterns formation, obtained for normal and oblique deposited Au films. We show that the normal and oblique depositions, through the same template, originate different patterns of the Au film. As a consequence of these different starting patterns, after the thermal processes, different patterns for the arrays of NPs originating from the dewetting mechanisms are obtained. For each fixed deposition angle α, the pattern evolution is analyzed, by scanning electron microscopy, as a function of the annealing time at 1173 K (900 °C). From these analyses, quantitative evaluations on the NPs size evolution are drawn. - Highlights: • Micrometric template-confined nanoscale gold films are deposited on silicon carbide. • The dewetting process of template-confined gold films on silicon carbide is studied. • Comparison of dewetting process of normal and oblique deposited gold films is drawn. • Patterned arrays of gold nanoparticles on silicon carbide surface are produced

Nanostructured silicon for thermoelectric

Science.gov (United States)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2011-06-01

Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

KAUST Repository

Zhai, Yujia

2012-11-26

We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

KAUST Repository

Zhai, Yujia; Palard, Marylene; Mathew, Leo; Hussain, Muhammad Mustafa; Willson, Grant Grant; Tutuc, Emanuel; Banerjee, Sanjay Kumar

2012-01-01

We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography

Science.gov (United States)

Lim, Cheol-Min; Lee, In-Kyu; Lee, Ki Joong; Oh, Young Kyoung; Shin, Yong-Beom; Cho, Won-Ju

2017-12-01

This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7 mV/pH and 439.3 mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1 mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.

Nucleation of small angle boundaries

CSIR Research Space (South Africa)

Nabarro, FRN

1996-12-01

Full Text Available The internal stresses induced by the strain gradients in an array of lattice cells delineated by low-angle dislocation boundaries are partially relieved by the creation of new low-angle boundaries. This is shown to be a first-order transition...

The hyperion particle-γ detector array

Energy Technology Data Exchange (ETDEWEB)

Hughes, R.O.; Burke, J.T.; Casperson, R.J.; Ota, S. [Nuclear and Chemical Sciences Division, Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States); Fisher, S.; Parker, J. [Science, Technology and Engineering Division, Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States); Beausang, C.W. [Department of Physics, University of Richmond, 28 Westhampton Way, Richmond, VA 23173 (United States); Dag, M. [Cyclotron Institute, Texas A& M University, College Station, TX 77840 (United States); Humby, P. [Department of Physics, University of Richmond, 28 Westhampton Way, Richmond, VA 23173 (United States); Department of Physics, University of Surrey, Surrey GU27XH (United Kingdom); Koglin, J. [Nuclear and Chemical Sciences Division, Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States); McCleskey, E.; McIntosh, A.B.; Saastamoinen, A. [Cyclotron Institute, Texas A& M University, College Station, TX 77840 (United States); Tamashiro, A.S. [Department of Nuclear Science and Engineering, Oregon State University, Corvallis, OR 97331 (United States); Wilson, E. [Department of Physics, University of Richmond, 28 Westhampton Way, Richmond, VA 23173 (United States); Wu, T.C. [Department of Physics and Astronomy, University of Utah, Salt Lake City UT 84112-0830 (United States)

2017-06-01

Hyperion is a new high-efficiency charged-particle γ-ray detector array which consists of a segmented silicon telescope for charged-particle detection and up to fourteen high-purity germanium clover detectors for the detection of coincident γ rays. The array will be used in nuclear physics measurements and Stockpile Stewardship studies and replaces the STARLiTeR array. This article discusses the features of the array and presents data collected with the array in the commissioning experiment.

Performance of ultra-small silicon photomultiplier array with active area of 0.12 mm×0.12 mm

Energy Technology Data Exchange (ETDEWEB)

Yue, Wang; Zongde, Chen; Chenhui, Li; Ran, He; Shenyuan, Wang; Baicheng, Li; Ruiheng, Wang; Kun, Liang, E-mail: lk@bnu.edu.cn; Ru, Yang; Dejun, Han

2015-07-01

We report the performance of an ultra-small silicon photomultiplier (SiPM) line array with 7 elements of 0.12×0.12 mm{sup 2} in active area, 0.2 mm in pitch and 120 micro cells in one element. The device features an epitaxial bulk quenching resistor concept, demonstrated high geometrical fill factor of 41% and photon detection efficiency (PDE) of 25.4% in the wavelength region between 430 nm and 480 nm while retaining high micro cell density around 10 000 mm{sup −2} and ~3 ns FWHM of dark pulses width; it also demonstrated dark count rate of less than 28.7 kHz, optical crosstalk of the order of 2% to 4%, and excellent photon number discrimination. A 0.15 mm×1.6 mm×1.6 mm lutetium yttrium oxyorthosilicate (LYSO) crystal, corresponding to the width, length and height respectively, was successfully coupled to the 1×7 SiPM array for possible ultra-highly resolved positron emission tomography (PET) applications. This novel type of device has advantages particularly for small active area since the performances, such as PDE and response speed is one of the best among SiPMs with similarly high density of micro cells. It may pave a way for this type of SiPM as a promising pixel position sensitive device in imaging sensor applications. - Highlights: • The ultra-small SiPM line array with active area of 0.12 mm×0.12 mm was presented. • The ultra-small SiPM employs the bulk silicon structure as quenching resistor. • A considerable dynamic range and PDE over 25.4% @ 430 nm to 480 nm were characterized.

Physical chemistry of wet chemical anisotropic etching of silicon

NARCIS (Netherlands)

Elwenspoek, Michael Curt

1995-01-01

In this paper we explain a view to understand the anisotropy of the etching of silicon in certain wet chemical agents (such as KOH). The starting point is the assumption that the [Left angle bracket]111[Right Angle Bracket] face of silicon is a flat face, the etch rate of which is then governed by a

Low-temperature growth of well-aligned zinc oxide nanorod arrays on silicon substrate and their photocatalytic application

Directory of Open Access Journals (Sweden)

Azam A

2014-04-01

Full Text Available Ameer Azam,1 Saeed Salem Babkair21Center of Nanotechnology, King Abdulaziz University, Jeddah, Saudi Arabia; 2Center of Nanotechnology, Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, Saudi ArabiaAbstract: Well-aligned and single-crystalline zinc oxide (ZnO nanorod arrays were grown on silicon (Si substrate using a wet chemical route for the photodegradation of organic dyes. Structural analysis using X-ray diffraction, high-resolution transmission electron microscopy, and selected area electron diffraction confirmed the formation of ZnO nanorods grown preferentially oriented in the (001 direction and with a single phase nature with a wurtzite structure. Field emission scanning electron microscopy and transmission electron microscopy micrographs showed that the length and diameter of the well-aligned rods were about ~350–400 nm and ~80–90 nm, respectively. Raman scattering spectra of ZnO nanorod arrays revealed the characteristic E2 (high mode that is related to the vibration of oxygen atoms in the wurtzite ZnO. The photodegradation of methylene blue (MB using ZnO nanorod arrays was performed under ultraviolet light irradiation. The results of photodegradation showed that ZnO nanorod arrays were capable of degrading ~80% of MB within 60 minutes of irradiation, whereas ~92% of degradation was achieved in 120 minutes. Complete degradation of MB was observed after 270 minutes of irradiation time. Owing to enhanced photocatalytic degradation efficiency and low-temperature growth method, prepared ZnO nanorod arrays may open up the possibility for the successful utilization of ZnO nanorod arrays as a future photocatalyst for environmental remediation.Keywords: ZnO, nanorods, XRD, photodegradation

SWNT array resonant gate MOS transistor

Energy Technology Data Exchange (ETDEWEB)

Arun, A; Salet, P; Ionescu, A M [NanoLab, Ecole Polytechnique Federale de Lausanne, CH-1015, Lausanne (Switzerland); Campidelli, S; Filoramo, A; Derycke, V; Goffman, M F, E-mail: marcelo.goffman@cea.fr [Laboratoire d' Electronique Moleculaire, SPEC (CNRS URA 2454), IRAMIS, CEA, Gif-sur-Yvette (France)

2011-02-04

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

Large-scale aligned silicon carbonitride nanotube arrays: Synthesis, characterization, and field emission property

International Nuclear Information System (INIS)

Liao, L.; Xu, Z.; Liu, K. H.; Wang, W. L.; Liu, S.; Bai, X. D.; Wang, E. G.; Li, J. C.; Liu, C.

2007-01-01

Large-scale aligned silicon carbonitride (SiCN) nanotube arrays have been synthesized by microwave-plasma-assisted chemical vapor deposition using SiH 4 , CH 4 , and N 2 as precursors. The three elements of Si, C, and N are chemically bonded with each other and the nanotube composition can be adjusted by varying the SiH 4 concentration, as revealed by electron energy loss spectroscopy and x-ray photoelectron spectroscopy. The evolution of microstructure of the SiCN nanotubes with different Si concentrations was characterized by high-resolution transmission electron microscopy and Raman spectroscopy. The dependence of field emission characteristics of the SiCN nanotubes on the composition has been investigated. With the increasing Si concentration, the SiCN nanotube exhibits more favorable oxidation resistance, which suggests that SiCN nanotube is a promising candidate as stable field emitter

Demonstrating of Cosmic Ray Characteristics by Estimating the Cherenkov Light Lateral Distribution Function for Yakutsk Array as a Function of the Zenith Angle

OpenAIRE

Abdulsttar, Marwah M.; Al-Rubaiee, A. A.; Ali, Abdul Halim Kh.

2016-01-01

Cherenkov light lateral distribution function (CLLDF) in Extensive Air Showers (EAS) for different primary particles (e-, n , p, F, K and Fe) was simulated using CORSIKA code for conditions and configurations of Yakutsk EAS array with the fixed primary energy 3 PeV around the knee region at different zenith angles. Basing on the results of CLLDF numerical simulation, sets of approximated functions are reconstructed for different primary particles as a function of the zenith angle. A compariso...

Internal-strain effect on the valence band of strained silicon and its correlation with the bond angles

Energy Technology Data Exchange (ETDEWEB)

Inaoka, Takeshi, E-mail: inaoka@phys.u-ryukyu.ac.jp; Yanagisawa, Susumu; Kadekawa, Yukihiro [Department of Physics and Earth Sciences, Faculty of Science, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 (Japan)

2014-02-14

By means of the first-principles density-functional theory, we investigate the effect of relative atom displacement in the crystal unit cell, namely, internal strain on the valence-band dispersion of strained silicon, and find close correlation of this effect with variation in the specific bond angles due to internal strain. We consider the [111] ([110]) band dispersion for (111) ((110)) biaxial tensility and [111] ([110]) uniaxial compression, because remarkably small values of hole effective mass m* can be obtained in this dispersion. Under the practical condition of no normal stress, biaxial tensility (uniaxial compression) involves additional normal compression (tensility) and internal strain. With an increase in the internal-strain parameter, the energy separation between the highest and second-highest valence bands becomes strikingly larger, and the highest band with conspicuously small m* extends remarkably down to a lower energy region, until it intersects or becomes admixed with the second band. This is closely correlated with the change in the specific bond angles, and this change can reasonably explain the above enlargement of the band separation.

Amorphous silicon carbide ultramicroelectrode arrays for neural stimulation and recording

Science.gov (United States)

Deku, Felix; Cohen, Yarden; Joshi-Imre, Alexandra; Kanneganti, Aswini; Gardner, Timothy J.; Cogan, Stuart F.

2018-02-01

Objective. Foreign body response to indwelling cortical microelectrodes limits the reliability of neural stimulation and recording, particularly for extended chronic applications in behaving animals. The extent to which this response compromises the chronic stability of neural devices depends on many factors including the materials used in the electrode construction, the size, and geometry of the indwelling structure. Here, we report on the development of microelectrode arrays (MEAs) based on amorphous silicon carbide (a-SiC). Approach. This technology utilizes a-SiC for its chronic stability and employs semiconductor manufacturing processes to create MEAs with small shank dimensions. The a-SiC films were deposited by plasma enhanced chemical vapor deposition and patterned by thin-film photolithographic techniques. To improve stimulation and recording capabilities with small contact areas, we investigated low impedance coatings on the electrode sites. The assembled devices were characterized in phosphate buffered saline for their electrochemical properties. Main results. MEAs utilizing a-SiC as both the primary structural element and encapsulation were fabricated successfully. These a-SiC MEAs had 16 penetrating shanks. Each shank has a cross-sectional area less than 60 µm2 and electrode sites with a geometric surface area varying from 20 to 200 µm2. Electrode coatings of TiN and SIROF reduced 1 kHz electrode impedance to less than 100 kΩ from ~2.8 MΩ for 100 µm2 Au electrode sites and increased the charge injection capacities to values greater than 3 mC cm‑2. Finally, we demonstrated functionality by recording neural activity from basal ganglia nucleus of Zebra Finches and motor cortex of rat. Significance. The a-SiC MEAs provide a significant advancement in the development of microelectrodes that over the years has relied on silicon platforms for device manufacture. These flexible a-SiC MEAs have the potential for decreased tissue damage and reduced

Fabrication of close-packed TES microcalorimeter arrays using superconducting molybdenum/gold transition-edge sensors

Science.gov (United States)

Finkbeiner, F. M.; Brekosky, R. P.; Chervenak, J. A.; Figueroa-Feliciano, E.; Li, M. J.; Lindeman, M. A.; Stahle, C. K.; Stahle, C. M.; Tralshawala, N.

2002-02-01

We present an overview of our efforts in fabricating Transition-Edge Sensor (TES) microcalorimeter arrays for use in astronomical x-ray spectroscopy. Two distinct types of array schemes are currently pursued: 5×5 single pixel TES array where each pixel is a TES microcalorimeter, and Position-Sensing TES (PoST) array. In the latter, a row of 7 or 15 thermally-linked absorber pixels is read out by two TES at its ends. Both schemes employ superconducting Mo/Au bilayers as the TES. The TES are placed on silicon nitride membranes for thermal isolation from the structural frame. The silicon nitride membranes are prepared by a Deep Reactive Ion Etch (DRIE) process into a silicon wafer. In order to achieve the concept of closely packed arrays without decreasing its structural and functional integrity, we have already developed the technology to fabricate arrays of cantilevered pixel-sized absorbers and slit membranes in silicon nitride films. Furthermore, we have started to investigate ultra-low resistance through-wafer micro-vias to bring the electrical contact out to the back of a wafer. .

Performance of a monolithic LaBr{sub 3}:Ce crystal coupled to an array of silicon photomultipliers

Energy Technology Data Exchange (ETDEWEB)

Ulyanov, Alexei, E-mail: alexey.uliyanov@ucd.ie [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Morris, Oran [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Department of Computer Science & Applied Physics, Galway-Mayo Institute of Technology, Galway (Ireland); Hanlon, Lorraine; McBreen, Sheila; Foley, Suzanne; Roberts, Oliver J.; Tobin, Isaac; Murphy, David; Wade, Colin [School of Physics, University College Dublin, Belfield, Dublin 4 (Ireland); Nelms, Nick; Shortt, Brian [European Space Agency, ESTEC, 2200 AG Noordwijk (Netherlands); Slavicek, Tomas; Granja, Carlos; Solar, Michael [Institute of Experimental and Applied Physics, Czech Technical University in Prague, 12800 Prague 2 (Czech Republic)

2016-02-21

A gamma-ray detector composed of a single 28×28×20 mm{sup 3} LaBr{sub 3}:Ce crystal coupled to a custom built 4×4 array of silicon photomultipliers was tested over an energy range of 30 keV to 9.3 MeV. The silicon photomultipliers were initially calibrated using 20 ns light pulses generated by a light emitting diode. The photodetector responses measured as a function of the number of incident photons were found to be non-linear and consistent with model predictions. Using corrections for the non-linearity of the silicon photomultipliers, the detector showed a linear response to gamma-rays with energies from 100 keV to the maximum available energy of 9.3 MeV. The energy resolution was found to be 4% FWHM at 662 keV. Despite the large thickness of the scintillator (20 mm) and a 5 mm thick optical window, the detector was capable of measuring the positions of the gamma-ray interaction points. The position resolution was measured at 356 keV and was found to be 8 mm FWHM in the detector plane and 11 mm FWHM for the depth of interaction. The detector can be used as a building block of a larger calorimeter system that is capable of measuring gamma-ray energies up to tens of MeV.

Photoelectric Properties of Silicon Nanocrystals/P3HT Bulk-Heterojunction Ordered in Titanium Dioxide Nanotube Arrays

Directory of Open Access Journals (Sweden)

Švrček Vladimir

2009-01-01

Full Text Available Abstract A silicon nanocrystals (Si-ncs conjugated-polymer-based bulk-heterojunction represents a promising approach for low-cost hybrid solar cells. In this contribution, the bulk-heterojunction is based on Si-ncs prepared by electrochemical etching and poly(3-hexylthiophene (P3HT polymer. Photoelectric properties in parallel and vertical device-like configuration were investigated. Electronic interaction between the polymer and surfactant-free Si-ncs is achieved. Temperature-dependent photoluminescence and transport properties were studied and the ratio between the photo- and dark-conductivity of 1.7 was achieved at ambient conditions. Furthermore the porous titanium dioxide (TiO2 nanotubes’ template was used for vertical order of photosensitive Si-ncs/P3HT-based blend. The anodization of titanium foil in ethylene glycol-based electrolyte containing fluoride ions and subsequent thermal annealing were used to prepare anatase TiO2nanotube arrays. The arrays with nanotube inner diameter of 90 and 50 nm were used for vertical ordering of the Si-ncs/P3HT bulk-heterojunction.

Transmit/Receive Spatial Smoothing with Improved Effective Array Aperture for Angle and Mutual Coupling Estimation in Bistatic MIMO Radar

Directory of Open Access Journals (Sweden)

Haomiao Liu

2016-01-01

Full Text Available We proposed a transmit/receive spatial smoothing with improved effective aperture approach for angle and mutual coupling estimation in bistatic MIMO radar. Firstly, the noise in each channel is restrained, by exploiting its independency, in both the spatial domain and temporal domain. Then the augmented transmit and receive spatial smoothing matrices with improved effective aperture are obtained, by exploiting the Vandermonde structure of steering vector with uniform linear array. The DOD and DOA can be estimated by utilizing the unitary ESPRIT algorithm. Finally, the mutual coupling coefficients of both the transmitter and the receiver can be figured out with the estimated angles of DOD and DOA. Numerical examples are presented to verify the effectiveness of the proposed method.

Bio-Inspired Wide-Angle Broad-Spectrum Cylindrical Lens Based on Reflections from Micro-Mirror Array on a Cylindrical Elastomeric Membrane

Directory of Open Access Journals (Sweden)

Chi-Chieh Huang

2014-06-01

Full Text Available We present a wide-angle, broad-spectrum cylindrical lens based on reflections from an array of three-dimensional, high-aspect-ratio micro-mirrors fabricated on a cylindrical elastomeric substrate, functionally inspired by natural reflecting superposition compound eyes. Our device can perform one-dimensional focusing and beam-shaping comparable to conventional refraction-based cylindrical lenses, while avoiding chromatic aberration. The focal length of our cylindrical lens is 1.035 mm, suitable for micro-optical systems. Moreover, it demonstrates a wide field of view of 152° without distortion, as well as modest spherical aberrations. Our work could be applied to diverse applications including laser diode collimation, barcode scanning, holography, digital projection display, microlens arrays, and optical microscopy.

Design and fabrication process of silicon micro-calorimeters on simple SOI technology for X-ray spectral imaging

International Nuclear Information System (INIS)

Aliane, A.; Agnese, P.; Pigot, C.; Sauvageot, J.-L.; Moro, F. de; Ribot, H.; Gasse, A.; Szeflinski, V.; Gobil, Y.

2008-01-01

Several successful development programs have been conducted on infra-red bolometer arrays at the 'Commissariat a l'Energie Atomique' (CEA-LETI Grenoble) in collaboration with the CEA-SAp (Saclay); taking advantage of this background, we are now developing an X-ray spectro-imaging camera for next generation space astronomy missions, using silicon only technology. We have developed monolithic silicon micro-calorimeters based on implanted thermistors in an improved array that could be used for future space missions. The 8x8 array consists of a grid of 64 suspended pixels fabricated on a silicon on insulator (SOI) wafer. Each pixel of this detector array is made of a tantalum (Ta) absorber, which is bound by means of indium bump hybridization, to a silicon thermistor. The absorber array is bound to the thermistor array in a collective process. The fabrication process of our detector involves a combination of standard technologies and silicon bulk micro-machining techniques, based on deposition, photolithography and plasma etching steps. Finally, we present the results of measurements performed on these four primary building blocks that are required to create a detector array up to 32x32 pixels in size

Tracking efficiency and charge sharing of 3D silicon sensors at different angles in a 1.4T magnetic field

CERN Document Server

Gjersdal, H; Slaviec, T; Sandaker, H; Tsung, J; Bolle, E; Da Via, C; Wermes, N; Borri, M; Grinstein, S; Nordahl, P; Hugging, F; Dorholt, O; Rohne, O; La Rosa, A; Sjobaek, K; Tsybychev, D; Mastroberardino, A; Fazio, S; Su, D; Young, C; Hasi, J; Grenier, P; Hansson, P; Jackson, P; Kenney, C; Kocian, M

2011-01-01

A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4 T magnetic field with a 180 GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400 pm long pixel side, this resulting in a p-n inter-electrode distance of similar to 71 mu m. Its behavior was confronted with a planar sensor of the type presently installed in the ATLAS inner tracker. Time over threshold, charge sharing and tracking efficiency data were collected at zero and 15 angles with and without magnetic field. The latest is the angular configuration expected for the modules of the Insertable B-Layer (IBL) currently under study for the LHC phase 1 upgrade expected in 2014. (C) 2010 Elsevier B.V. All rights reserved.

Optimal and Local Connectivity Between Neuron and Synapse Array in the Quantum Dot/Silicon Brain

Science.gov (United States)

Duong, Tuan A.; Assad, Christopher; Thakoor, Anikumar P.

2010-01-01

This innovation is used to connect between synapse and neuron arrays using nanowire in quantum dot and metal in CMOS (complementary metal oxide semiconductor) technology to enable the density of a brain-like connection in hardware. The hardware implementation combines three technologies: 1. Quantum dot and nanowire-based compact synaptic cell (50x50 sq nm) with inherently low parasitic capacitance (hence, low dynamic power approx.l0(exp -11) watts/synapse), 2. Neuron and learning circuits implemented in 50-nm CMOS technology, to be integrated with quantum dot and nanowire synapse, and 3. 3D stacking approach to achieve the overall numbers of high density O(10(exp 12)) synapses and O(10(exp 8)) neurons in the overall system. In a 1-sq cm of quantum dot layer sitting on a 50-nm CMOS layer, innovators were able to pack a 10(exp 6)-neuron and 10(exp 10)-synapse array; however, the constraint for the connection scheme is that each neuron will receive a non-identical 10(exp 4)-synapse set, including itself, via its efficacy of the connection. This is not a fully connected system where the 100x100 synapse array only has a 100-input data bus and 100-output data bus. Due to the data bus sharing, it poses a great challenge to have a complete connected system, and its constraint within the quantum dot and silicon wafer layer. For an effective connection scheme, there are three conditions to be met: 1. Local connection. 2. The nanowire should be connected locally, not globally from which it helps to maximize the data flow by sharing the same wire space location. 3. Each synapse can have an alternate summation line if needed (this option is doable based on the simple mask creation). The 10(exp 3)x10(exp 3)-neuron array was partitioned into a 10-block, 10(exp 2)x10(exp 3)-neuron array. This building block can be completely mapped within itself (10,000 synapses to a neuron).

Dependence of black fragment azimuthal and projected angular distributions on polar angle in silicon-emulsion collisions at 4.5A GeV/c

International Nuclear Information System (INIS)

Liu Fuhu; Abd Allah, Nabil N.; Singh, B.K.

2004-01-01

The experimental results of dependence of black fragment azimuth (φ) and projected angle (ψ) distributions on polar angle θ in silicon-emulsion collisions at 4.5A GeV/c (the Dubna momentum) are reported. There are two regions of enhancement around φ=±90 deg. for different θ ranges. These enhancements are due to directed (v 1 ) and elliptic (v 2 ) flows. The v 1 and v 2 dependence of values on θ shows that the directed flow is weak and the elliptic flow is strong in these collisions. A multisource ideal gas model is used to describe the experimental results of dependence. The Monte Carlo calculated results are approximately in agreement with the experimental data

Piezoelectric transducer array microspeaker

KAUST Repository

Carreno, Armando Arpys Arevalo

2016-12-19

In this paper we present the fabrication and characterization of a piezoelectric micro-speaker. The speaker is an array of micro-machined piezoelectric membranes, fabricated on silicon wafer using advanced micro-machining techniques. Each array contains 2n piezoelectric transducer membranes, where “n” is the bit number. Every element of the array has a circular shape structure. The membrane is made out four layers: 300nm of platinum for the bottom electrode, 250nm or lead zirconate titanate (PZT), a top electrode of 300nm and a structural layer of 50

Telescope and mirrors development for the monolithic silicon carbide instrument of the osiris narrow angle camera

Science.gov (United States)

Calvel, Bertrand; Castel, Didier; Standarovski, Eric; Rousset, Gérard; Bougoin, Michel

2017-11-01

The international Rosetta mission, now planned by ESA to be launched in January 2003, will provide a unique opportunity to directly study the nucleus of comet 46P/Wirtanen and its activity in 2013. We describe here the design, the development and the performances of the telescope of the Narrow Angle Camera of the OSIRIS experiment et its Silicon Carbide telescope which will give high resolution images of the cometary nucleus in the visible spectrum. The development of the mirrors has been specifically detailed. The SiC parts have been manufactured by BOOSTEC, polished by STIGMA OPTIQUE and ion figured by IOM under the prime contractorship of ASTRIUM. ASTRIUM was also in charge of the alignment. The final optical quality of the aligned telescope is 30 nm rms wavefront error.

Signal encoding method for a time-of-flight PET detector using a silicon photomultiplier array

Science.gov (United States)

Kwon, Sun Il; Lee, Jae Sung

2014-10-01

The silicon photomultiplier (SiPM) is a promising photosensor for magnetic resonance (MR) compatible time-of-flight (TOF) positron emission tomography (PET) scanners. The compact size of the SiPM allows direct one-to-one coupling between the scintillation crystal and the photosensor, yielding better timing and energy resolutions than the light sharing methods that have to be used in photomultiplier tube (PMT) PET systems. However, the one-to-one coupling scheme requires a huge volume of readout and processing electronics if no electric signal multiplexing or encoding scheme is properly applied. In this paper, we develop an electric signal encoding scheme for SiPM array based TOF PET detector blocks with the aim of reducing the complexity and volume of the signal readout and processing electronics. In an M×N SiPM array, the output signal of each channel in the SiPM array is divided into two signal lines. These output lines are then tied together in row and column lines. The row and column signals are used to measure the energy and timing information (or vice versa) of each incident gamma-ray event, respectively. Each SiPM channel was directly coupled to a 3×3×20 mm3 LGSO crystal. The reference detector, which was used to measure timing, consisted of an R9800 PMT and a 4×4×10 mm3 LYSO crystal and had a single time resolution of ~200 ps (FWHM). Leading edge discriminators were used to determine coincident events. Dedicated front-end electronics were developed, and the timing and energy resolutions of SiPM arrays with different array sizes (4×4, 8×8, and 12×12) were compared. Breakdown voltage of each SiPM channel was measured using energy spectra within various bias voltages. Coincidence events were measured using a 22Na point source. The average coincidence time resolution of 4×4, 8×8, and 12×12 SiPM arrays were 316 ps, 320 ps, and 335 ps (FWHM), respectively. The energy resolution of 4×4, 8×8, and 12×12 SiPM arrays were 11.8%, 12.5%, and 12.8% (FWHM

Readout and characterisation of new silicon pixel photodiode array for use in PET

International Nuclear Information System (INIS)

Hooper, P.; Ward, G.; Lerch, R.; Rozenfeld, A.

2002-01-01

Full text: Positron emission tomography (PET) is a functional imaging tool, which is able to quantify physiological, and biochemical processes in vivo using short-lived cyclotron-produced radiotracers. The main physical principle of PET is the simultaneous measurement of two 511 keV photons which are emitted in opposite directions following the annihilation of a positron in tissue. The accuracy of tracking these photons determines the accuracy of localising the radiotracer in the body, which is referred to as the spatial resolution of the system. Compared with conventional single photon imaging with gamma cameras, PET provides superior spatial resolution and sensitivity. However, compared with anatomical imaging techniques, the spatial resolution remains relatively poor at approximately 4-6 mm full width at half maximum (FWHM), compared with 1 mm FWHM for MRI. The Centre for Medical Radiation Physics at the University of Wollongong is developing a new Positron Emission Tomography (PET) detection sub-module that will significantly improve the spatial resolution of PET. The new sub-module design is simple and robust to minimise module assembly complications and is completely independent of photomultiplier tubes. The new sub-module has also been designed to maximise its flexibility for easy sub-module coupling so as to form a complete, customised, detection module to be used in PET scanners dedicated to human brain and breast, and small animal studies. A new computer controlled gantry allows the system to be used for PET and SPECT applications. Silicon 8x8 detector arrays have been developed by CMRP and will be optically coupled scintillation crystals and readout using the VIKING tM hybrid preamplifier chip to form the basis of the new module Characterisation of the pixel photodiode array has been performed to check the uniformity of the response of the array. This characterisation has been done using a pulsed, near infra-red laser diode system and alpha particles

Developing barbed microtip-based electrode arrays for biopotential measurement.

Science.gov (United States)

Hsu, Li-Sheng; Tung, Shu-Wei; Kuo, Che-Hsi; Yang, Yao-Joe

2014-07-10

This study involved fabricating barbed microtip-based electrode arrays by using silicon wet etching. KOH anisotropic wet etching was employed to form a standard pyramidal microtip array and HF/HNO3 isotropic etching was used to fabricate barbs on these microtips. To improve the electrical conductance between the tip array on the front side of the wafer and the electrical contact on the back side, a through-silicon via was created during the wet etching process. The experimental results show that the forces required to detach the barbed microtip arrays from human skin, a polydimethylsiloxane (PDMS) polymer, and a polyvinylchloride (PVC) film were larger compared with those required to detach microtip arrays that lacked barbs. The impedances of the skin-electrode interface were measured and the performance levels of the proposed dry electrode were characterized. Electrode prototypes that employed the proposed tip arrays were implemented. Electroencephalogram (EEG) and electrocardiography (ECG) recordings using these electrode prototypes were also demonstrated.

Developing Barbed Microtip-Based Electrode Arrays for Biopotential Measurement

Directory of Open Access Journals (Sweden)

Li-Sheng Hsu

2014-07-01

Full Text Available This study involved fabricating barbed microtip-based electrode arrays by using silicon wet etching. KOH anisotropic wet etching was employed to form a standard pyramidal microtip array and HF/HNO3 isotropic etching was used to fabricate barbs on these microtips. To improve the electrical conductance between the tip array on the front side of the wafer and the electrical contact on the back side, a through-silicon via was created during the wet etching process. The experimental results show that the forces required to detach the barbed microtip arrays from human skin, a polydimethylsiloxane (PDMS polymer, and a polyvinylchloride (PVC film were larger compared with those required to detach microtip arrays that lacked barbs. The impedances of the skin-electrode interface were measured and the performance levels of the proposed dry electrode were characterized. Electrode prototypes that employed the proposed tip arrays were implemented. Electroencephalogram (EEG and electrocardiography (ECG recordings using these electrode prototypes were also demonstrated.

Plasmonic and silicon spherical nanoparticle antireflective coatings

Science.gov (United States)

Baryshnikova, K. V.; Petrov, M. I.; Babicheva, V. E.; Belov, P. A.

2016-03-01

Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes.

Enhancing the far-UV sensitivity of silicon CMOS imaging arrays

Science.gov (United States)

Retherford, K. D.; Bai, Yibin; Ryu, Kevin K.; Gregory, J. A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winter, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2014-07-01

We report our progress toward optimizing backside-illuminated silicon PIN CMOS devices developed by Teledyne Imaging Sensors (TIS) for far-UV planetary science applications. This project was motivated by initial measurements at Southwest Research Institute (SwRI) of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures described in Bai et al., SPIE, 2008, which revealed a promising QE in the 100-200 nm range as reported in Davis et al., SPIE, 2012. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include: 1) Representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory (LL); 2) Preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; 3) Detector fabrication was completed through the pre-MBE step; and 4) Initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. Early results suggest that potential challenges in optimizing the UV-sensitivity of silicon PIN type CMOS devices, compared with similar UV enhancement methods established for CCDs, have been mitigated through our newly developed methods. We will discuss the potential advantages of our approach and briefly describe future development steps.

Manipulation of extinction spectra of P3HT/PMMA medium arrays on silicon substrate containing self-assembled gold nanoparticles

International Nuclear Information System (INIS)

Wu, Ming-Chung; Chen, Shih-Wen; Li, Jia-Han; Chou, Yi; Lin, Jhih-Fong; Chen, Yang-Fang; Su, Wei-Fang

2012-01-01

In this study, we report a simple novel approach to modulate the extinction spectra of P3HT/PMMA by manipulating the medium arrays on a substrate that is coated with self-assembled gold nanoparticles. The 20 nm gold nanoparticles were synthesized and then self-assembled on the APTMS/silicon substrate surface by immersing the substrate into the gold colloid suspension. A high-resolution P3HT/PMMA photoluminescent electron beam resist was used to fabricate various square hole arrays on the substrate containing gold nanoparticles. The P3HT/PMMA medium composition causes the blue shifts in the extinction peaks of up to 40.6 nm by decreasing the period from 500 nm to 200 nm for P3HT/PMMA square hole arrays with a diameter of 100 nm. The magnitude of blue shift is directly proportional to the product of the changes of medium refractive index and the array structure factor. These peak shifts and intensity of extinction spectra for various P3HT/PMMA medium arrays are well described by the finite-difference time-domain (FDTD) simulation results. Since this simple cost-effective technique can tune the extinction spectrum of medium and adding the gold nanoparticles can give more functionalities for sensing applications, such as surface-enhanced Raman scattering (SERS), that provides good opportunities for the design and fabrication of new optoelectronic devices and sensors. Highlights: ► We can tune the extinction spectra of P3HT/PMMA by manipulating the medium arrays. ► These optical behaviors of P3HT/PMMA medium arrays are well described by FDTD simulation results. ► Adding the Au nanoparticles can give more functionalities for sensing applications.

Manipulation of extinction spectra of P3HT/PMMA medium arrays on silicon substrate containing self-assembled gold nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Wu, Ming-Chung [Department of Chemical and Materials Engineering, Chang Gung University, Taoyuan 333-02, Taiwan (China); Chen, Shih-Wen; Li, Jia-Han [Department of Engineering Science and Ocean Engineering, National Taiwan University, Taipei 106-17, Taiwan (China); Chou, Yi; Lin, Jhih-Fong [Department of Materials Science and Engineering, National Taiwan University, Taipei 106-17, Taiwan (China); Chen, Yang-Fang [Department of Physics, National Taiwan University, Taipei 106-17, Taiwan (China); Su, Wei-Fang, E-mail: suwf@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 106-17, Taiwan (China)

2012-11-15

In this study, we report a simple novel approach to modulate the extinction spectra of P3HT/PMMA by manipulating the medium arrays on a substrate that is coated with self-assembled gold nanoparticles. The 20 nm gold nanoparticles were synthesized and then self-assembled on the APTMS/silicon substrate surface by immersing the substrate into the gold colloid suspension. A high-resolution P3HT/PMMA photoluminescent electron beam resist was used to fabricate various square hole arrays on the substrate containing gold nanoparticles. The P3HT/PMMA medium composition causes the blue shifts in the extinction peaks of up to 40.6 nm by decreasing the period from 500 nm to 200 nm for P3HT/PMMA square hole arrays with a diameter of 100 nm. The magnitude of blue shift is directly proportional to the product of the changes of medium refractive index and the array structure factor. These peak shifts and intensity of extinction spectra for various P3HT/PMMA medium arrays are well described by the finite-difference time-domain (FDTD) simulation results. Since this simple cost-effective technique can tune the extinction spectrum of medium and adding the gold nanoparticles can give more functionalities for sensing applications, such as surface-enhanced Raman scattering (SERS), that provides good opportunities for the design and fabrication of new optoelectronic devices and sensors. Highlights: Black-Right-Pointing-Pointer We can tune the extinction spectra of P3HT/PMMA by manipulating the medium arrays. Black-Right-Pointing-Pointer These optical behaviors of P3HT/PMMA medium arrays are well described by FDTD simulation results. Black-Right-Pointing-Pointer Adding the Au nanoparticles can give more functionalities for sensing applications.

Fabrication process for CMUT arrays with polysilicon electrodes, nanometre precision cavity gaps and through-silicon vias

International Nuclear Information System (INIS)

Due-Hansen, J; Poppe, E; Summanwar, A; Jensen, G U; Breivik, L; Wang, D T; Schjølberg-Henriksen, K; Midtbø, K

2012-01-01

Capacitive micromachined ultrasound transducers (CMUTs) can be used to realize miniature ultrasound probes. Through-silicon vias (TSVs) allow for close integration of the CMUT and read-out electronics. A fabrication process enabling the realization of a CMUT array with TSVs is being developed. The integrated process requires the formation of highly doped polysilicon electrodes with low surface roughness. A process for polysilicon film deposition, doping, CMP, RIE and thermal annealing that resulted in a film with sheet resistance of 4.0 Ω/□ and a surface roughness of 1 nm rms has been developed. The surface roughness of the polysilicon film was found to increase with higher phosphorus concentrations. The surface roughness also increased when oxygen was present in the thermal annealing ambient. The RIE process for etching CMUT cavities in the doped polysilicon gave a mean etch depth of 59.2 ± 3.9 nm and a uniformity across the wafer ranging from 1.0 to 4.7%. The two presented processes are key processes that enable the fabrication of CMUT arrays suitable for applications in for instance intravascular cardiology and gastrointestinal imaging. (paper)

ISPA (imaging silicon pixel array) experiment

CERN Document Server

Patrice Loïez

2002-01-01

Application components of ISPA tubes are shown: the CERN-developed anode chip, special windows for gamma and x-ray detection, scintillating crystal and fibre arrays for imaging and tracking of ionizing particles.

Novel method of separating macroporous arrays from p-type silicon substrate

International Nuclear Information System (INIS)

Peng Bobo; Wang Fei; Liu Tao; Yang Zhenya; Wang Lianwei; Fu, Ricky K. Y.; Chu, Paul K.

2012-01-01

This paper presents a novel method to fabricate separated macroporous silicon using a single step of photo-assisted electrochemical etching. The method is applied to fabricate silicon microchannel plates in 100 mm p-type silicon wafers, which can be used as electron multipliers and three-dimensional Li-ion microbatteries. Increasing the backside illumination intensity and decreasing the bias simultaneously can generate additional holes during the electrochemical etching which will create lateral etching at the pore tips. In this way the silicon microchannel can be separated from the substrate when the desired depth is reached, then it can be cut into the desired shape by using a laser cutting machine. Also, the mechanism of lateral etching is proposed. (semiconductor materials)

Collected charge and Lorentz angle measurement on non-irradiated ATLAS silicon micro-strip sensors for the HL-LHC

Energy Technology Data Exchange (ETDEWEB)

Yildirim, Eda

2017-02-15

In this thesis, the collected charge and the Lorentz angle on non-irradiated and the irradiated miniature of the current test silicon micro-strip sensors (ATLAS12) of the future ATLAS inner tracker are measured. The samples are irradiated up to 5 x 10{sup 15} 1 MeV n{sub eq}/cm{sup 2} and some of them also measured after short-term annealing (80 min at 60 C). The measurements are performed at the DESY II test beam, which provides the advantage of tracking to suppress noise hits. The collected charge is measured at various bias voltages for each sample. The results are compared with the measurements performed using a Sr{sup 90} radioactive source. It is shown that the measurements with beam and radioactive source are consistent with each other, and the advantage of tracking at the beam measurements provides the measurement of collected charge on highly irradiated sensors at lower bias voltages. The Lorentz angle is measured for each sample at different magnetic field strengths between 0 T and 1 T, the results are extrapolated to 2 T, which is the magnetic field in the inner tracker of the ATLAS detector. Most of the measurements are performed at -500 V bias voltage, which is the planned operation bias voltage of the future strip tracker. Some samples are also measured at different bias voltages to observe the effect of bias voltage on the Lorentz angle. The signal reconstruction of the strip sensors are performed using the lowest possible signal-to-noise thresholds. For non-irradiated samples, the measured Lorentz angle agrees with the prediction of the BFK model. On the irradiated samples, the results suggest that the Lorentz angle decreases with increasing bias voltage due to the increasing electric field in the sensor. The Lorentz angle decreases with increasing irradiation level; however, if the sample is under-depleted, the effect of electric field dominates and the Lorentz angle increases. Once the irradiation level becomes too high, hence the collected charge

Minimizing Isolate Catalyst Motion in Metal-Assisted Chemical Etching for Deep Trenching of Silicon Nanohole Array.

Science.gov (United States)

Kong, Lingyu; Zhao, Yunshan; Dasgupta, Binayak; Ren, Yi; Hippalgaonkar, Kedar; Li, Xiuling; Chim, Wai Kin; Chiam, Sing Yang

2017-06-21

The instability of isolate catalysts during metal-assisted chemical etching is a major hindrance to achieve high aspect ratio structures in the vertical and directional etching of silicon (Si). In this work, we discussed and showed how isolate catalyst motion can be influenced and controlled by the semiconductor doping type and the oxidant concentration ratio. We propose that the triggering event in deviating isolate catalyst motion is brought about by unequal etch rates across the isolate catalyst. This triggering event is indirectly affected by the oxidant concentration ratio through the etching rates. While the triggering events are stochastic, the doping concentration of silicon offers a good control in minimizing isolate catalyst motion. The doping concentration affects the porosity at the etching front, and this directly affects the van der Waals (vdWs) forces between the metal catalyst and Si during etching. A reduction in the vdWs forces resulted in a lower bending torque that can prevent the straying of the isolate catalyst from its directional etching, in the event of unequal etch rates. The key understandings in isolate catalyst motion derived from this work allowed us to demonstrate the fabrication of large area and uniformly ordered sub-500 nm nanoholes array with an unprecedented high aspect ratio of ∼12.

Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

International Nuclear Information System (INIS)

Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

2014-01-01

High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles

Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin, E-mail: mohajer@ut.ac.ir [Thin Film and Nanoelectronics Lab, Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 143957131 (Iran, Islamic Republic of)

2014-11-10

High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

An algorithm for calculating the Lorentz angle in silicon detectors [online

OpenAIRE

Bartsch, Valeria; De Boer, Willem; Bol, Johannes; Dierlamm, Alexander; Grigoriev, Eugene; Hauler, Florian; Heising, Stephan; Jungermann, Levin

2001-01-01

The CMS (Compact Muon Solenoid) detector will use silicon sensors in the harsh radiation environment of the LHC (Large Hadron Collider) and high magnetic fields. The drift direction of the charge carriers is aected by the Lorentz force due to the high magnetic field. Also the resulting radiation damage changes the properties of the drift. The CMS silicon strip detector is read out on the p-side of the sensors, where holes are coll...

Ultradense, Deep Subwavelength Nanowire Array Photovoltaics As Engineered Optical Thin Films

KAUST Repository

Tham, Douglas; Heath, James R.

2010-01-01

A photovoltaic device comprised of an array of 20 nm wide, 32 nm pitch array of silicon nanowires is modeled as an optical material. The nanowire array (NWA) has characteristic device features that are deep in the subwavelength regime for light

Contact Angles and Surface Tension of Germanium-Silicon Melts

Science.gov (United States)

Croell, A.; Kaiser, N.; Cobb, S.; Szofran, F. R.; Volz, M.; Rose, M. Franklin (Technical Monitor)

2001-01-01

Precise knowledge of material parameters is more and more important for improving crystal growth processes. Two important parameters are the contact (wetting) angle and the surface tension, determining meniscus shapes and surface-tension driven flows in a variety of methods (Czochralski, EFG, floating-zone, detached Bridgman growth). The sessile drop technique allows the measurement of both parameters simultaneously and has been used to measure the contact angles and the surface tension of Ge(1-x)Si(x) (0 less than or equal to x less than or equal to 1.3) alloys on various substrate materials. Fused quartz, Sapphire, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AIN, Si3N4, and polycrystalline CVD diamond were used as substrate materials. In addition, the effect of different cleaning procedures and surface treatments on the wetting behavior were investigated. Measurements were performed both under dynamic vacuum and gas atmospheres (argon or forming gas), with temperatures up to 1100 C. In some experiments, the sample was processed for longer times, up to a week, to investigate any changes of the contact angle and/or surface tension due to slow reactions with the substrate. For pure Ge, stable contact angles were found for carbon-based substrates and for pBN, for Ge(1-x)Si(x) only for pBN. The highest wetting angles were found for pBN substrates with angles around 170deg. For the surface tension of Ge, the most reliable values resulted in gamma(T) = (591- 0.077 (T-T(sub m)) 10(exp -3)N/m. The temperature dependence of the surface tension showed similar values for Ge(1-x)Si(x), around -0.08 x 10(exp -3)N/m K, and a compositional dependence of 2.2 x 10(exp -3)N/m at%Si.

Analysis of water microdroplet condensation on silicon surfaces

Science.gov (United States)

Honda, Takuya; Fujimoto, Kenya; Yoshimoto, Yuta; Mogi, Katsuo; Kinefuchi, Ikuya; Sugii, Yasuhiko; Takagi, Shu; Univ. of Tokyo Team; Tokyo Inst. of Tech. Team

2016-11-01

We observed the condensation process of water microdroplets on flat silicon (100) surfaces by means of the sequential visualization of the droplets using an environmental scanning electron microscope. As previously reported for nanostructured surfaces, the condensation process of water microdroplets on the flat silicon surfaces also exhibits two modes: the constant base (CB) area mode and the constant contact angle (CCA) mode. In the CB mode, the contact angle increases with time while the base diameter is constant. Subsequently, in the CCA mode, the base diameter increases with time while the contact angle remains constant. The dropwise condensation model regulated by subcooling temperature does not reproduce the experimental results. Because the subcooling temperature is not constant in the case of a slow condensation rate, this model is not applicable to the condensation of the long time scale ( several tens of minutes). The contact angle of water microdroplets ( several μm) tended to be smaller than the macro contact angle. Two hypotheses are proposed as the cause of small contact angles: electrowetting and the coalescence of sub- μm water droplets.

Estimation of surface impedance using different types of microphone arrays

DEFF Research Database (Denmark)

Richard, Antoine Philippe André; Fernandez Grande, Efren; Brunskog, Jonas

2017-01-01

This study investigates microphone array methods to measure the angle dependent surface impedance of acoustic materials. The methods are based on the reconstruction of the sound field on the surface of the material, using a wave expansion formulation. The reconstruction of both the pressure...... and the particle velocity leads to an estimation of the surface impedance for a given angle of incidence. A porous type absorber sample is tested experimentally in anechoic conditions for different array geometries, sample sizes, incidence angles, and distances between the array and sample. In particular......, the performances of a rigid spherical array and a double layer planar array are examined. The use of sparse array processing methods and conventional regulariation approaches are studied. In addition, the influence of the size of the sample on the surface impedance estimation is investigated using both...

Low Cost Solar Array Project. Feasibility of the silane process for producing semiconductor-grade silicon. Final report, October 1975-March 1979

Energy Technology Data Exchange (ETDEWEB)

1979-06-01

The commercial production of low-cost semiconductor-grade silicon is an essential requirement of the JPL/DOE (Department of Energy) Low-Cost Solar Array (LSA) Project. A 1000-metric-ton-per-year commercial facility using the Union Carbide Silane Process will produce molten silicon for an estimated price of $7.56/kg (1975 dollars, private financing), meeting the DOE goal of less than $10/kg. Conclusions and technology status are reported for both contract phases, which had the following objectives: (1) establish the feasibility of Union Carbide's Silane Process for commercial application, and (2) develop an integrated process design for an Experimental Process System Development Unit (EPSDU) and a commercial facility, and estimate the corresponding commercial plant economic performance. To assemble the facility design, the following work was performed: (a) collection of Union Carbide's applicable background technology; (b) design, assembly, and operation of a small integrated silane-producing Process Development Unit (PDU); (c) analysis, testing, and comparison of two high-temperature methods for converting pure silane to silicon metal; and (d) determination of chemical reaction equilibria and kinetics, and vapor-liquid equilibria for chlorosilanes.

New applications using phased array techniques

International Nuclear Information System (INIS)

Erhard, A.; Schenk, G.; Hauser, Th.; Voelz, U.

2001-01-01

In general, the application of phased array techniques used to be limited to heavy components with large wall thicknesses, such as those in the nuclear power industry. With the improvement of the phased array equipment, including phased array search units, other application areas are now accessible for the phased array inspection technique, e.g. the inspection of turbine blade roots, weld inspection with a wall thickness ranging from 12 to 40 mm, inspection of aircraft components, inspection of spot welds and the inspection of concrete building components. The objective for the use of phased array techniques has not significantly changed since their first application, e.g. instant adjustment of the sound beam to the geometry of the test object by steering incidence angle, skew angle and/or sound field focusing. Because some new phased array technique applications are still in the experimental (laboratory) stage, this article will focus on some examples for practical, real-weld applications

A new large solid angle multi-element silicon drift detector system for low energy X-ray fluorescence spectroscopy

Science.gov (United States)

Bufon, J.; Schillani, S.; Altissimo, M.; Bellutti, P.; Bertuccio, G.; Billè, F.; Borghes, R.; Borghi, G.; Cautero, G.; Cirrincione, D.; Fabiani, S.; Ficorella, F.; Gandola, M.; Gianoncelli, A.; Giuressi, D.; Kourousias, G.; Mele, F.; Menk, R. H.; Picciotto, A.; Rachevski, A.; Rashevskaya, I.; Sammartini, M.; Stolfa, A.; Zampa, G.; Zampa, N.; Zorzi, N.; Vacchi, A.

2018-03-01

Low-energy X-ray fluorescence (LEXRF) is an essential tool for bio-related research of organic samples, whose composition is dominated by light elements. Working at energies below 2 keV and being able to detect fluorescence photons of lightweight elements such as carbon (277 eV) is still a challenge, since it requires in-vacuum operations to avoid in-air photon absorption. Moreover, the detectors must have a thin entrance window and collect photons at an angle of incidence near 90 degrees to minimize the absorption by the protective coating. Considering the low fluorescence yield of light elements, it is important to cover a substantial part of the solid angle detecting ideally all emitted X-ray fluorescence (XRF) photons. Furthermore, the energy resolution of the detection system should be close to the Fano limit in order to discriminate elements whose XRF emission lines are often very close within the energy spectra. To ensure all these features, a system consisting of four monolithic multi-element silicon drift detectors was developed. The use of four separate detector units allows optimizing the incidence angle on all the sensor elements. The multi-element approach in turn provides a lower leakage current on each anode, which, in combination with ultra-low noise preamplifiers, is necessary to achieve an energy resolution close to the Fano limit. The potential of the new detection system and its applicability for typical LEXRF applications has been proved on the Elettra TwinMic beamline.

Low-cost solar array progress and plans

Science.gov (United States)

Callaghan, W. T.

It is pointed out that significant redirection has occurred in the U.S. Department of Energy (DOE) Photovoltaics Program, and thus in the Flat-Plate Solar Array Project (FSA), since the 3rd European Communities Conference. The Silicon Materials Task has now the objective to sponsor theoretical and experimental research on silicon material refinement technology suitable for photovoltaic flat-plate solar arrays. With respect to the hydrochlorination reaction, a process proof of concept was completed through definition of reaction kinetics, catalyst, and reaction characteristics. In connection with the dichlorosilane chemical vapor desposition process, a preliminary design was completed of an experimental process system development unit with a capacity of 100 to 200 MT/yr of Si.Attention is also given to the silicon-sheet formation research area, environmental isolation research, the cell and module formation task, the engineering sciences area, and the module performance and failure analysis area.

Two- to three-dimensional crossover in a dense electron liquid in silicon

Science.gov (United States)

Matmon, Guy; Ginossar, Eran; Villis, Byron J.; Kölker, Alex; Lim, Tingbin; Solanki, Hari; Schofield, Steven R.; Curson, Neil J.; Li, Juerong; Murdin, Ben N.; Fisher, Andrew J.; Aeppli, Gabriel

2018-04-01

Doping of silicon via phosphine exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense (ns=2.8 ×1014 cm-2) disordered two-dimensional array of P atoms, the full field magnitude and angle-dependent magnetotransport is remarkably well described by classic weak localization theory with no corrections due to interaction. The two- to three-dimensional crossover seen upon warming can also be interpreted using scaling concepts developed for anistropic three-dimensional materials, which work remarkably except when the applied fields are nearly parallel to the conducting planes.

Protein Functionalized Nanodiamond Arrays

Directory of Open Access Journals (Sweden)

Liu YL

2010-01-01

Full Text Available Abstract Various nanoscale elements are currently being explored for bio-applications, such as in bio-images, bio-detection, and bio-sensors. Among them, nanodiamonds possess remarkable features such as low bio-cytotoxicity, good optical property in fluorescent and Raman spectra, and good photostability for bio-applications. In this work, we devise techniques to position functionalized nanodiamonds on self-assembled monolayer (SAMs arrays adsorbed on silicon and ITO substrates surface using electron beam lithography techniques. The nanodiamond arrays were functionalized with lysozyme to target a certain biomolecule or protein specifically. The optical properties of the nanodiamond-protein complex arrays were characterized by a high throughput confocal microscope. The synthesized nanodiamond-lysozyme complex arrays were found to still retain their functionality in interacting with E. coli.

A new ion detector array and digital-signal-processor-based interface

International Nuclear Information System (INIS)

Langstaff, D.P.; McGinnity, T.M.; Forbes, D.M.; Birkinshaw, K.; Lawton, M.W.

1994-01-01

A new one-dimensional ion detector array on a silicon chip has been developed for use in mass spectrometry. It is much smaller and simpler than electro-optical arrays currently in use and in addition has a higher resolution and a zero noise level. The array consists of a one-dimensional array of metal strips (electrodes) with a pitch of 25 μm on the top surface of a silicon chip, each electrode having its own charge pulse sensor, 8-bit counter and control/interface circuitry. The chip is mounted on a ceramic substrate and is preceded by a micro-channel plate electron multiplier. Chips are butted to give a longer array. Test results show a stable operating region. A digital-signal-processor-based interface is described, which controls the mode of operation and reads the accumulated array data at the maximum rate to avoid counter overflow. (author)

A new ion detector array and digital-signal-processor-based interface

Energy Technology Data Exchange (ETDEWEB)

Langstaff, D.P.; McGinnity, T.M.; Forbes, D.M.; Birkinshaw, K. (University Coll. of Wales, Aberystwyth (United Kingdom). Dept. of Physics); Lawton, M.W. (University of Wales Aberystwyth (United Kingdom). Dept. of Computer Science)

1994-04-01

A new one-dimensional ion detector array on a silicon chip has been developed for use in mass spectrometry. It is much smaller and simpler than electro-optical arrays currently in use and in addition has a higher resolution and a zero noise level. The array consists of a one-dimensional array of metal strips (electrodes) with a pitch of 25 [mu]m on the top surface of a silicon chip, each electrode having its own charge pulse sensor, 8-bit counter and control/interface circuitry. The chip is mounted on a ceramic substrate and is preceded by a micro-channel plate electron multiplier. Chips are butted to give a longer array. Test results show a stable operating region. A digital-signal-processor-based interface is described, which controls the mode of operation and reads the accumulated array data at the maximum rate to avoid counter overflow. (author).

Computationally Efficient 2D DOA Estimation with Uniform Rectangular Array in Low-Grazing Angle

Directory of Open Access Journals (Sweden)

Junpeng Shi

2017-02-01

Full Text Available In this paper, we propose a computationally efficient spatial differencing matrix set (SDMS method for two-dimensional direction of arrival (2D DOA estimation with uniform rectangular arrays (URAs in a low-grazing angle (LGA condition. By rearranging the auto-correlation and cross-correlation matrices in turn among different subarrays, the SDMS method can estimate the two parameters independently with one-dimensional (1D subspace-based estimation techniques, where we only perform difference for auto-correlation matrices and the cross-correlation matrices are kept completely. Then, the pair-matching of two parameters is achieved by extracting the diagonal elements of URA. Thus, the proposed method can decrease the computational complexity, suppress the effect of additive noise and also have little information loss. Simulation results show that, in LGA, compared to other methods, the proposed methods can achieve performance improvement in the white or colored noise conditions.

Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

KAUST Repository

Jahangir, Shafat; Frost, Thomas; Hazari, Arnab; Yan, Lifan; Stark, Ethan; LaMountain, Trevor; Millunchick, Joanna M.; Ooi, Boon S.; Bhattacharya, Pallab

2015-01-01

The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

KAUST Repository

Jahangir, Shafat

2015-02-16

The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).

Vrancea seismic source analysis using a small-aperture array

International Nuclear Information System (INIS)

Popescu, E.; Popa, M.; Radulian, M.; Placinta, A.O.

2005-01-01

A small-aperture seismic array (BURAR) was installed in 1999 in the northern part of the Romanian territory (Bucovina area). Since then, the array has been in operation under a joint cooperation programme between Romania and USA. The array consists of 10 stations installed in boreholes (nine short period instruments and one broadband instrument) with enough high sensitivity to properly detect earthquakes generated in Vrancea subcrustal domain (at about 250 km epicentral distance) with magnitude M w below 3. Our main purpose is to investigate and calibrate the source parameters of the Vrancea intermediate-depth earthquakes using specific techniques provided by the BURAR array data. Forty earthquakes with magnitudes between 2.9 and 6.0 were selected, including the recent events of September 27, 2004 (45.70 angle N, 26.45 angle E, h = 166 km, M w = 4.7), October 27, 2004 (45.84 angle N, 26.63 angle E, h = 105 km, M w = 6.0) and May 14, 2005 (45.66 angle N, 26.52 angle E, h = 146 km, M w = 5.1), which are the best ever recorded earthquakes on the Romanian territory: Empirical Green's function deconvolution and spectral ratio methods are applied for pairs of collocated events with similar focal mechanism. Stability tests are performed for the retrieved source time function using the array elements. Empirical scaling and calibration relationships are also determined. Our study shows the capability of the BURAR array to determine the source parameters of the Vrancea intermediate-depth earthquakes as a stand alone station and proves that the recordings of this array alone provides reliable and useful tools to efficiently constrain the source parameters and consequently source scaling properties. (authors)

Angle-selective all-dielectric Huygens’ metasurfaces

Science.gov (United States)

Arslan, D.; Chong, K. E.; Miroshnichenko, A. E.; Choi, D.-Y.; Neshev, D. N.; Pertsch, T.; Kivshar, Y. S.; Staude, I.

2017-11-01

We experimentally and numerically study the angularly resolved transmission properties of dielectric metasurfaces consisting of silicon nanodisks which support electric and magnetic dipolar Mie-type resonances in the near-infrared spectral range. First, we concentrate on Huygens’ metasurfaces which are characterised by a spectral overlap of the fundamental electric and magnetic dipole resonances of the silicon nanodisks at normal incidence. Huygens’ metasurfaces exhibit a high transmitted intensity over the spectral width of the resonances due to impedance matching, while the transmitted phase shows a variation of 2π as the wavelength is swept across the width of the resonances. We observe that the transmittance of the Huygens’ metasurfaces depends on the incidence angle and is sensitive to polarisation for non-normal incidence. As the incidence angle is increased starting from normal incidence, the two dipole resonances are shifted out of the spectral overlap and the resonant features appear as pronounced transmittance minima. Next, we consider a metasurface with an increased nanodisk radius as compared to the Huygens’ metasurface, which supports spectrally separate electric and magnetic dipole resonances at normal incidence. We show that for TM polarisation, we can shift the resonances of this metasurface into spectral overlap and regain the high resonant transmittance characteristic of Huygens’ metasurfaces at a particular incidence angle. Furthermore, both metasurfaces are demonstrated to reject all TM polarised light incident under angles other than the design overlap angle at their respective operation frequency. Our experimental observations are in good qualitative agreement with numerical calculations.

Maximum super angle optimization method for array antenna pattern synthesis

DEFF Research Database (Denmark)

Wu, Ji; Roederer, A. G

1991-01-01

Different optimization criteria related to antenna pattern synthesis are discussed. Based on the maximum criteria and vector space representation, a simple and efficient optimization method is presented for array and array fed reflector power pattern synthesis. A sector pattern synthesized by a 2...

Preliminary Demonstration of Power Beaming With Non-Coherent Laser Diode Arrays

National Research Council Canada - National Science Library

Kare, Jordin

1999-01-01

A preliminary demonstration of free-space electric power transmission has been conducted using non-coherent laser diode arrays as the transmitter and standard silicon photovoltaic cell arrays as the receiver...

Microfabricated Multianalyte Sensor Arrays for Metabolite Monitoring

National Research Council Canada - National Science Library

Pishko, Michael V; Mugweru, Amos

2005-01-01

.... In this work we have taken advantage of silicon micro-fabrication technologies to develop implantable redundant microsensor arrays with glucose oxidase molecules immobilized in photopolymerized...

Desarrollo de un circuito integrado de múltiples canales para Silicon fotomultiplicador arrays lectura

CERN Document Server

Comerma i Montells, Albert

2013-10-31

The aim of this thesis is to present a solution for the readout of Silicon Photo-Multipliers (SiPMs) arrays improving currently implemented systems. Using as a starting point previous designs with similar objectives a novel current mode input stage has been designed and tested. To start with the design a valid model has been used to generate realistic output from the SiPMs depending on light input. Design has been performed in first place focusing in general applications for medical imaging Positron Emission Tomography (PET) and then using the same topology for a more constrained design in particle detectors (upgrade of Tracker detector at LHCb experiment). A 16 channel ASIC for PET applications including the novel input stage has demonstrated an excellent timing measurement with good energy resolution measurement and pile-up detection. This document starts with the analysis of the requirements needed to fit such a system. Followed by a detailed description of the input stage and analog processing. Signal is ...

An Improved Manufacturing Approach for Discrete Silicon Microneedle Arrays with Tunable Height-Pitch Ratio

Directory of Open Access Journals (Sweden)

Renxin Wang

2016-10-01

Full Text Available Silicon microneedle arrays (MNAs have been widely studied due to their potential in various transdermal applications. However, discrete MNAs, as a preferred choice to fabricate flexible penetrating devices that could adapt curved and elastic tissue, are rarely reported. Furthermore, the reported discrete MNAs have disadvantages lying in uniformity and height-pitch ratio. Therefore, an improved technique is developed to manufacture discrete MNA with tunable height-pitch ratio, which involves KOH-dicing-KOH process. The detailed process is sketched and simulated to illustrate the formation of microneedles. Furthermore, the undercutting of convex mask in two KOH etching steps are mathematically analyzed, in order to reveal the relationship between etching depth and mask dimension. Subsequently, fabrication results demonstrate KOH-dicing-KOH process. {321} facet is figured out as the surface of octagonal pyramid microneedle. MNAs with diverse height and pitch are also presented to identify the versatility of this approach. At last, the metallization is realized via successive electroplating.

Polarization Insensitive One-to-Six WDM Multicasting in a Silicon Nanowire

DEFF Research Database (Denmark)

Pu, Minhao; Hu, Hao; Peucheret, Christophe

2012-01-01

We present polarization insensitive one-to-six WDM multicasting based on nondegenerate four-wave mixing in a silicon nanowire with angled-pump scheme. Bit-error rate measurements are performed and error-free operation is achieved.......We present polarization insensitive one-to-six WDM multicasting based on nondegenerate four-wave mixing in a silicon nanowire with angled-pump scheme. Bit-error rate measurements are performed and error-free operation is achieved....

Complications of cataract surgery in eyes filled with silicone oil.

Science.gov (United States)

Kanclerz, Piotr; Grzybowski, Andrzej; Schwartz, Stephen G; Lipowski, Paweł

2018-03-01

The aim of the study was to evaluate complications of cataract surgery in eyes filled with silicone oil. This retrospective, noncomparative, consecutive case series analyzed medical files of patients with eyes filled with silicone oil undergoing cataract surgery. Phacoemulsification with posterior chamber intraocular lens implantation was conducted with or without concurrent silicone oil removal. In this study, 121 eyes of 120 patients were included. In 32 eyes (26.4%) with evident silicone oil microemulsification or silicone oil-associated open-angle glaucoma, silicone oil was removed prior to phacoemulsification through a pars plana incision and no cases of posterior capsular rupture occurred during the subsequent cataract surgery. In the remaining 89 eyes, phacoemulsification was performed with silicone oil in the vitreous cavity. In these eyes, the rate of posterior capsular rupture was 9/89 (10.1%) and the rate of silicone oil migration into the anterior chamber through an apparently intact posterior capsule was 5/89 (5.6%). In 94 eyes (77.7%), an intraocular lens was inserted into the capsular bag, in 3 eyes (2.5%) into the sulcus, and in 1 eye (0.8%) a transscleral suturing was performed. In this series, complications related to the silicone oil were not uncommon during cataract surgery. In the majority of patients without evident silicone oil microemulsification or silicone oil-associated open-angle glaucoma, cataract surgery and posterior chamber intraocular lens implantation were performed while leaving the silicone oil in place.

Capillary Rise: Validity of the Dynamic Contact Angle Models.

Science.gov (United States)

Wu, Pingkeng; Nikolov, Alex D; Wasan, Darsh T

2017-08-15

The classical Lucas-Washburn-Rideal (LWR) equation, using the equilibrium contact angle, predicts a faster capillary rise process than experiments in many cases. The major contributor to the faster prediction is believed to be the velocity dependent dynamic contact angle. In this work, we investigated the dynamic contact angle models for their ability to correct the dynamic contact angle effect in the capillary rise process. We conducted capillary rise experiments of various wetting liquids in borosilicate glass capillaries and compared the model predictions with our experimental data. The results show that the LWR equations modified by the molecular kinetic theory and hydrodynamic model provide good predictions on the capillary rise of all the testing liquids with fitting parameters, while the one modified by Joos' empirical equation works for specific liquids, such as silicone oils. The LWR equation modified by molecular self-layering model predicts well the capillary rise of carbon tetrachloride, octamethylcyclotetrasiloxane, and n-alkanes with the molecular diameter or measured solvation force data. The molecular self-layering model modified LWR equation also has good predictions on the capillary rise of silicone oils covering a wide range of bulk viscosities with the same key parameter W(0), which results from the molecular self-layering. The advantage of the molecular self-layering model over the other models reveals the importance of the layered molecularly thin wetting film ahead of the main meniscus in the energy dissipation associated with dynamic contact angle. The analysis of the capillary rise of silicone oils with a wide range of bulk viscosities provides new insights into the capillary dynamics of polymer melts.

Enhanced lifetime for thin-dielectric microdischarge-arrays operating in DC

Science.gov (United States)

Dussart, Remi; Felix, Valentin; Overzet, Lawrence; Aubry, Olivier; Stolz, Arnaud; Lefaucheux, Philippe; Gremi-Univ Orleans-Cnrs Collaboration; University Of Texas At Dallas Collaboration

2016-09-01

Micro-hollow cathode discharge arrays using silicon as the cathode have a very limited lifetime because the silicon bubbles and initiates micro-arcing. To avoid this destructive behavior, the same configuration was kept but, another material was selected for the cathode. Using micro and nanotechnologies ordinarily used in microelectronic and MEMS device fabrication, we made arrays of cathode boundary layer (CBL)-type microreactors consisting of nickel electrodes separated by a 6 µm thick SiO2 layer. Microdischarges were ignited in arrays of 100 µm diameter holes at different pressures (200750 Torr) in different gases. Electrical and optical measurements were made to characterize the arrays. Unlike the microdischarges produced using silicon cathodes, the Ni cathode discharges remain very stable with essentially no micro-arcing. DC currents between 50 and 900 µA flowed through each microreactor with a discharge voltage of typically 200 V. Stable V-I characteristics showing both the normal and abnormal regimes were observed and are consistent with the spread of the plasma over the cathode area. Due to their stability and lifetime, new applications of these DC, CBL-type microreactors can now be envisaged.

Evaluation of selected chemical processes for production of low-cost silicon phase 2. silicon material task, low-cost silicon solar array project

Science.gov (United States)

Blocher, J. M., Jr.; Browning, M. F.; Rose, E. E.; Thompson, W. B.; Schmitt, W. A.; Fippin, J. S.; Kidd, R. W.; Liu, C. Y.; Kerbler, P. S.; Ackley, W. R.

1978-01-01

Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.

An optical tunable filter array based on LCOS phase grating

Science.gov (United States)

Feng, Dong; Wan, Zhujun; Chen, Xu; Yan, Shijia; Luo, Zhixiang

2018-01-01

This paper reports an optical tunable filter array (TFA) based on a LCOS (liquid crystal on silicon) chip. The input broadband optical beam is first dispersed by a bulk grating and then incident on the LCOS chip. The LCOS chip is phase-only modulated and constructed as a dynamic reflective phase grating. The phase modulation is adjusted to meet the Littrow angle for a specified passband wavelength and thus the optical beam corresponding to this wavelength is steered to the output. The input/output optical beams are coupled to optical fibers with a dual-fiber collimator. Four dualfiber collimators are vertically aligned as the inputs/outputs and the pixels of the LCOS chip are vertically allocated as four independent zones. Thus the device can act as a 4-channel TFA, which is assembled and functionally demonstrated.

Lab-on-chip system combining a microfluidic-ELISA with an array of amorphous silicon photosensors for the detection of celiac disease epitopes

Directory of Open Access Journals (Sweden)

Francesca Costantini

2015-12-01

Full Text Available This work presents a lab-on-chip system, which combines a glass-polydimethilsiloxane microfluidic network and an array of amorphous silicon photosensors for the diagnosis and follow-up of Celiac disease. The microfluidic chip implements an on-chip enzyme-linked immunosorbent assay (ELISA, relying on a sandwich immunoassay between antibodies against gliadin peptides (GPs and a secondary antibody marked with horseradish peroxidase (Ig-HRP. This enzyme catalyzes a chemiluminescent reaction, whose light intensity is detected by the amorphous silicon photosensors and transduced into an electrical signal that can be processed to recognize the presence of antibodies against GPs in the serum of people affected by Celiac syndrome.The correct operation of the developed lab-on-chip has been demonstrated using rabbit serum in the microfluidic ELISA. In particular, optimizing the dilution factors of both sera and Ig-HRP samples in the flowing solutions, the specific and non-specific antibodies against GPs can be successfully distinguished, showing the suitability of the presented device to effectively screen celiac disease epitopes. Keywords: Lab-on-chip, Celiac disease, Microfluidics, On-chip detection, ELISA, Amorphous silicon photosensors

High-Temperature Performance of Stacked Silicon Nanowires for Thermoelectric Power Generation

Science.gov (United States)

Stranz, Andrej; Waag, Andreas; Peiner, Erwin

2013-07-01

Deep reactive-ion etching at cryogenic temperatures (cryo-DRIE) has been used to produce arrays of silicon nanowires (NWs) for thermoelectric (TE) power generation devices. Using cryo-DRIE, we were able to fabricate NWs of large aspect ratios (up to 32) using a photoresist mask. Roughening of the NW sidewalls occurred, which has been recognized as beneficial for low thermal conductivity. Generated NWs, which were 7 μm in length and 220 nm to 270 nm in diameter, were robust enough to be stacked with a bulk silicon chip as a common top contact to the NWs. Mechanical support of the NW array, which can be created by filling the free space between the NWs using silicon oxide or polyimide, was not required. The Seebeck voltage, measured across multiple stacks of up to 16 bulk silicon dies, revealed negligible thermal interface resistance. With stacked silicon NWs, we observed Seebeck voltages that were an order of magnitude higher than those observed for bulk silicon. Degradation of the TE performance of silicon NWs was not observed for temperatures up to 470°C and temperature gradients up to 170 K.

Effect of embedded dexamethasone in cochlear implant array on insertion forces in an artificial model of scala tympani.

Science.gov (United States)

Nguyen, Yann; Bernardeschi, Daniele; Kazmitcheff, Guillaume; Miroir, Mathieu; Vauchel, Thomas; Ferrary, Evelyne; Sterkers, Olivier

2015-02-01

Loading otoprotective drug into cochlear implant might change its mechanical properties, thus compromising atraumatic insertion. This study evaluated the effect of incorporation of dexamethasone (DXM) in the silicone of cochlear implant arrays on insertion forces. Local administration of DXM with embedded array can potentially reduce inflammation and fibrosis after cochlear implantation procedure to improve hearing preservation and reduce long-term impedances. Four models of arrays have been tested: 0.5-mm distal diameter array (n = 5) used as a control, drug-free 0.4-mm distal diameter array (n = 5), 0.4-mm distal diameter array with 1% eluded DXM silicone (n = 5), and 0.4-mm distal diameter array with 10% eluded DXM silicone (n = 5). Via a motorized insertion bench, each array has been inserted into an artificial scala tympani model. The forces were recorded by a 6-axis force sensor. Each array was tested seven times for a total number of 140 insertions. During the first 10-mm insertion, no difference between the four models was observed. From 10- to 24-mm insertion, the 0.5-mm distal diameter array presented higher insertion forces than the drug-free 0.4-mm distal diameter arrays, with or without DXM. Friction forces for drug-free 0.4-mm distal diameter array and 0.4-mm distal diameter DXM eluded arrays were similar on all insertion lengths. Incorporation of DXM in silicone for cochlear implant design does not change electrode array insertion forces. It does not raise the risk of trauma during array insertion, making it suitable for long-term in situ administration to the cochlea.

Megavoltage imaging with a large-area, flat-panel, amorphous silicon imager

International Nuclear Information System (INIS)

Antonuk, Larry E.; Yorkston, John; Huang Weidong; Sandler, Howard; Siewerdsen, Jeffrey H.; El-Mohri, Youcef

1996-01-01

Purpose: The creation of the first large-area, amorphous silicon megavoltage imager is reported. The imager is an engineering prototype built to serve as a stepping stone toward the creation of a future clinical prototype. The engineering prototype is described and various images demonstrating its properties are shown including the first reported patient image acquired with such an amorphous silicon imaging device. Specific limitations in the engineering prototype are reviewed and potential advantages of future, more optimized imagers of this type are presented. Methods and Materials: The imager is based on a two-dimensional, pixelated array containing amorphous silicon field-effect transistors and photodiode sensors which are deposited on a thin glass substrate. The array has a 512 x 560-pixel format and a pixel pitch of 450 μm giving an imaging area of ∼23 x 25 cm 2 . The array is used in conjunction with an overlying metal plate/phosphor screen converter as well as an electronic acquisition system. Images were acquired fluoroscopically using a megavoltage treatment machine. Results: Array and digitized film images of a variety of anthropomorphic phantoms and of a human subject are presented and compared. The information content of the array images generally appears to be at least as great as that of the digitized film images. Conclusion: Despite a variety of severe limitations in the engineering prototype, including many array defects, a relatively slow and noisy acquisition system, and the lack of a means to generate images in a radiographic manner, the prototype nevertheless generated clinically useful information. The general properties of these amorphous silicon arrays, along with the quality of the images provided by the engineering prototype, strongly suggest that such arrays could eventually form the basis of a new imaging technology for radiotherapy localization and verification. The development of a clinically useful prototype offering high

Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

Science.gov (United States)

Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

2015-10-06

We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

Photoconductor arrays for a spectral-photometric far-infrared camera on SOFIA

Science.gov (United States)

Wolf, Juergen; Driescher, Hans; Schubert, Josef; Rabanus, D.; Paul, E.; Roesner, K.

1998-04-01

The Stratospheric Observatory for Infrared Astronomy, SOFIA, is a joint US and German project and will start observations from altitudes up to 45,000 ft in late 2001. The 2.5 m telescope is being developed in Germany while the 747- aircraft modifications and preparation of the observatory's operations center is done by a US consortium. Several research institutions and universities of both countries have started to develop science instruments. The DLR Institute of Space Sensor Technology in Berlin plans on a spectral-photometric camera working in the 20 to 220 micrometers wavelength range, using doped silicon and germanium extrinsic photoconductors in large, 2D arrays: silicon blocked-impurity band detectors, Ge:Ga and stressed Ge:Ga. While the silicon array will be commercially available, the germanium arrays have to be developed, including their cryogenic multiplexers. Partner institutions in Germany and the US will support the development of the instrument and its observations.

Performance study of solar cell arrays based on a Trough Concentrating Photovoltaic/Thermal system

International Nuclear Information System (INIS)

Li, Ming; Ji, Xu; Li, Guoliang; Wei, Shengxian; Li, YingFeng; Shi, Feng

2011-01-01

Highlights: → The performances of solar cell arrays based on a Trough Concentrating Photovoltaic/Thermal (TCPV/T) system have been studied. → The optimum concentration ratios for the single crystalline silicon cell, the Super cells and the GaAs cells were studied by experiments. → The influences between the solar cell's performance and the series resistances, the working temperature, solar irradiation intensity were explored. - Abstract: The performances of solar cell arrays based on a Trough Concentrating Photovoltaic/Thermal (TCPV/T) system have been studied via both experiment and theoretical calculation. The I-V characteristics of the solar cell arrays and the output performances of the TCPV/T system demonstrated that among the investigated four types of solar cell arrays, the triple junction GaAs cells possessed good performance characteristics and the polysilicon cells exhibited poor performance characteristics under concentrating conditions. The optimum concentration ratios for the single crystalline silicon cell, the Super cells and the GaAs cells were also studied by experiments. The optimum concentration ratios for the single crystalline silicon cells and Super cells were 4.23 and 8.46 respectively, and the triple junction GaAs cells could work well at higher concentration ratio. Besides, some theoretical calculations and experiments were performed to explore the influences of the series resistances and the working temperature. When the series resistances R s changed from 0 Ω to 1 Ω, the maximum power P m of the single crystalline silicon, the polycrystalline silicon, the Super cell and the GaAs cell arrays decreased by 67.78%, 74.93%, 77.30% and 58.07% respectively. When the cell temperature increased by 1 K, the short circuit current of the four types of solar cell arrays decreased by 0.11818 A, 0.05364 A, 0.01387 A and 0.00215 A respectively. The research results demonstrated that the output performance of the solar cell arrays with lower

Bias-assisted KOH etching of macroporous silicon membranes

International Nuclear Information System (INIS)

Mathwig, K; Geilhufe, M; Müller, F; Gösele, U

2011-01-01

This paper presents an improved technique to fabricate porous membranes from macroporous silicon as a starting material. A crucial step in the fabrication process is the dissolution of silicon from the backside of the porous wafer by aqueous potassium hydroxide to open up the pores. We improved this step by biasing the silicon wafer electrically against the KOH. By monitoring the current–time characteristics a good control of the process is achieved and the yield is improved. Also, the etching can be stopped instantaneously and automatically by short-circuiting Si and KOH. Moreover, the bias-assisted etching allows for the controlled fabrication of silicon dioxide tube arrays when the silicon pore walls are oxidized and inverted pores are released.

Additive Manufacturing of Overhang Structures Using Moisture-Cured Silicone with Support Material

Directory of Open Access Journals (Sweden)

Mohan Muthusamy

2018-04-01

Full Text Available Additive manufacturing (AM of soft materials has a wide variety of applications, such as customized or wearable devices. Silicone is one popular material for these applications given its favorable material properties. However, AM of silicone parts with overhang structures remains challenging due to the soft nature of the material. Overhang structures are the areas where there is no underlying structure. Typically, a support material is used and built in the underlying space so that the overhang structures can be built upon it. Currently, there is no support structure that has been used for AM of silicone. The goal of this study is to develop an AM process to fabricate silicone parts with overhang structures. We first identified and confirmed poly-vinyl alcohol (PVA, a water-soluble material, as a suitable support material for silicone by evaluating the adhesion strength between silicone and PVA. Process parameters for the support material, including critical overhang angle and minimum infill density for the support material, are identified. However, overhang angle alone is not the only determining factor for support material. As silicone is a soft material, it deflects due to its own weight when the height of the overhang structure increases. A finite element model is developed to estimate the critical overhang height paired with different overhang angles to determine whether the use of support material is needed. Finally, parts with overhang structures are printed to demonstrate the capability of the developed process.

Magnetic alloy nanowire arrays with different lengths: Insights into the crossover angle of magnetization reversal process

Energy Technology Data Exchange (ETDEWEB)

Samanifar, S.; Alikhani, M. [Department of Physics, University of Kashan, Kashan 87317-51167 (Iran, Islamic Republic of); Almasi Kashi, M., E-mail: almac@kashanu.ac.ir [Department of Physics, University of Kashan, Kashan 87317-51167 (Iran, Islamic Republic of); Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan 87317-51167 (Iran, Islamic Republic of); Ramazani, A. [Department of Physics, University of Kashan, Kashan 87317-51167 (Iran, Islamic Republic of); Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan 87317-51167 (Iran, Islamic Republic of); Montazer, A.H. [Institute of Nanoscience and Nanotechnology, University of Kashan, Kashan 87317-51167 (Iran, Islamic Republic of)

2017-05-15

Nanoscale magnetic alloy wires are being actively investigated, providing fundamental insights into tuning properties in magnetic data storage and processing technologies. However, previous studies give trivial information about the crossover angle of magnetization reversal process in alloy nanowires (NWs). Here, magnetic alloy NW arrays with different compositions, composed of Fe, Co and Ni have been electrochemically deposited into hard-anodic aluminum oxide templates with a pore diameter of approximately 150 nm. Under optimized conditions of alumina barrier layer and deposition bath concentrations, the resulting alloy NWs with aspect ratio and saturation magnetization (M{sub s}) up to 550 and 1900 emu cm{sup −3}, respectively, are systematically investigated in terms of composition, crystalline structure and magnetic properties. Using angular dependence of coercivity extracted from hysteresis loops, the reversal processes are evaluated, indicating non-monotonic behavior. The crossover angle (θ{sub c}) is found to depend on NW length and M{sub s}. At a constant M{sub s}, increasing NW length decreases θ{sub c}, thereby decreasing the involvement of vortex mode during the magnetization reversal process. On the other hand, decreasing M{sub s} decreases θ{sub c} in large aspect ratio (>300) alloy NWs. Phenomenologically, it is newly found that increasing Ni content in the composition decreases θ{sub c}. The angular first-order reversal curve (AFORC) measurements including the irreversibility of magnetization are also investigated to gain a more detailed insight into θ{sub c}. - Highlights: • Magnetic alloy NWs with aspect ratios up to 550 were fabricated into hard-AAO templates. • Morphology, composition, crystal structure and magnetic properties were investigated. • Angular dependence of coercivity was used to describe the magnetization reversal process. • The crossover angle of magnetization reversal was found to depend on NW length and M{sub s}. �

Silicon nitride nanosieve membrane

NARCIS (Netherlands)

Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

2004-01-01

An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

Lateral electrical transport, optical properties and photocurrent measurements in two-dimensional arrays of silicon nanocrystals embedded in SiO2

Directory of Open Access Journals (Sweden)

Gardelis Spiros

2011-01-01

Full Text Available Abstract In this study we investigate the electronic transport, the optical properties, and photocurrent in two-dimensional arrays of silicon nanocrystals (Si NCs embedded in silicon dioxide, grown on quartz and having sizes in the range between less than 2 and 20 nm. Electronic transport is determined by the collective effect of Coulomb blockade gaps in the Si NCs. Absorption spectra show the well-known upshift of the energy bandgap with decreasing NC size. Photocurrent follows the absorption spectra confirming that it is composed of photo-generated carriers within the Si NCs. In films containing Si NCs with sizes less than 2 nm, strong quantum confinement and exciton localization are observed, resulting in light emission and absence of photocurrent. Our results show that Si NCs are useful building blocks of photovoltaic devices for use as better absorbers than bulk Si in the visible and ultraviolet spectral range. However, when strong quantum confinement effects come into play, carrier transport is significantly reduced due to strong exciton localization and Coulomb blockade effects, thus leading to limited photocurrent.

Digital electrostatic acoustic transducer array

KAUST Repository

Carreno, Armando Arpys Arevalo

2016-12-19

In this paper we present the fabrication and characterization of an array of electrostatic acoustic transducers. The array is micromachined on a silicon wafer using standard micro-machining techniques. Each array contains 2n electrostatic transducer membranes, where “n” is the bit number. Every element of the array has a hexagonal membrane shape structure, which is separated from the substrate by 3µm air gap. The membrane is made out 5µm thick polyimide layer that has a bottom gold electrode on the substrate and a gold top electrode on top of the membrane (250nm). The wafer layout design was diced in nine chips with different array configurations, with variation of the membrane dimensions. The device was tested with 90 V giving and sound output level as high as 35dB, while actuating all the elements at the same time.

Digital electrostatic acoustic transducer array

KAUST Repository

Carreno, Armando Arpys Arevalo; Castro, David; Conchouso Gonzalez, David; Kosel, Jü rgen; Foulds, Ian G.

2016-01-01

In this paper we present the fabrication and characterization of an array of electrostatic acoustic transducers. The array is micromachined on a silicon wafer using standard micro-machining techniques. Each array contains 2n electrostatic transducer membranes, where “n” is the bit number. Every element of the array has a hexagonal membrane shape structure, which is separated from the substrate by 3µm air gap. The membrane is made out 5µm thick polyimide layer that has a bottom gold electrode on the substrate and a gold top electrode on top of the membrane (250nm). The wafer layout design was diced in nine chips with different array configurations, with variation of the membrane dimensions. The device was tested with 90 V giving and sound output level as high as 35dB, while actuating all the elements at the same time.

Improvement of detection of stress corrosion cracks with ultrasonic phased array probes

International Nuclear Information System (INIS)

Wustenberg, H.; Mohrle, W.; Wegner, W.; Schenk, G.; Erhard, A.

1986-01-01

Probes with linear arrays can be used for the detection of stress corrosion cracks especially if the variability of the sound field is used to change the skewing angle of angle beam probes. The phased array concept can be used to produce a variable skewing angle or a variable angle of incidence depending on the orientation of the linear array on the wedge. This helps to adapt the direction of the ultrasonic beam to probable crack orientations. It has been demonstrated with artificial reflectors as well as with corrosion cracks, that the detection of misoriented cracks can be improved by this approach. The experiences gained during the investigations are encouraging the application of phased array probes for stress corrosion phenomena close to the heat effected zone of welds. Probes with variable skewing angles may find some interesting applications on welds in tubular structures e.g., at off shore constructions and on some difficult geometries within the primary circuit of nuclear power plants

A novel fabrication method of silicon nano-needles using MEMS TMAH etching techniques

International Nuclear Information System (INIS)

Yan Sheping; Xu Yang; Yang Junyi; Wang Huiquan; Jin Zhonghe; Wang Yuelin

2011-01-01

Nano-needles play important roles in nanoscale operations. However, current nano-needle fabrication is usually expensive and controling the sizes and angles is complicated. We have developed a simple and low cost silicon nano-needle fabrication method using traditional microelectromechanical system (MEMS) tetramethyl ammonium hydroxide (TMAH) etching techniques. We take advantage of the fact that the decrease of the silicon etch rate in TMAH solutions exhibits an inverse fourth power dependence on the boron doping concentration in our nano-needle fabrication. Silicon nano-needles, with high aspect ratio and sharp angles θ as small as 2.9 deg., are obtained, which could be used for bio-sensors and nano-handling procedures, such as penetrating living cells. An analytic model is proposed to explain the etching evolution of the experimental results, which is used to predict the needle angle, length, and etching time. Based on our method, nano-needles with small acute angle θ can be obtained.

A novel method for the fabrication of a high-density carbon nanotube microelectrode array

Directory of Open Access Journals (Sweden)

Adam Khalifa

2015-09-01

Full Text Available We present a novel method for fabricating a high-density carbon nanotube microelectrode array (MEA chip. Vertically aligned carbon nanotubes (VACNTs were synthesized by microwave plasma-enhanced chemical vapor deposition and thermal chemical vapor deposition. The device was characterized using electrochemical experiments such as cyclic voltammetry, impedance spectroscopy and potential transient measurements. Through-silicon vias (TSVs were fabricated and partially filled with polycrystalline silicon to allow electrical connection from the high-density electrodes to a stimulator microchip. In response to the demand for higher resolution implants, we have developed a unique process to obtain a high-density electrode array by making the microelectrodes smaller in size and designing new ways of routing the electrodes to current sources. Keywords: Microelectrode array, Neural implant, Carbon nanotubes, Through-silicon via interconnects, Microfabrication

Two-Dimensional Planar Lightwave Circuit Integrated Spatial Filter Array and Method of Use Thereof

Science.gov (United States)

Ai, Jun (Inventor); Dimov, Fedor (Inventor)

2015-01-01

A large coherent two-dimensional (2D) spatial filter array (SFA), 30 by 30 or larger, is produced by coupling a 2D planar lightwave circuit (PLC) array with a pair of lenslet arrays at the input and output side. The 2D PLC array is produced by stacking a plurality of chips, each chip with a plural number of straight PLC waveguides. A pupil array is coated onto the focal plane of the lenslet array. The PLC waveguides are produced by deposition of a plural number of silica layers on the silicon wafer, followed by photolithography and reactive ion etching (RIE) processes. A plural number of mode filters are included in the silica-on-silicon waveguide such that the PLC waveguide is transparent to the fundamental mode but higher order modes are attenuated by 40 dB or more.

TU-FG-209-03: Exploring the Maximum Count Rate Capabilities of Photon Counting Arrays Based On Polycrystalline Silicon

Energy Technology Data Exchange (ETDEWEB)

Liang, A K; Koniczek, M; Antonuk, L E; El-Mohri, Y; Zhao, Q [University of Michigan, Ann Arbor, MI (United States)

2016-06-15

Purpose: Photon counting arrays (PCAs) offer several advantages over conventional, fluence-integrating x-ray imagers, such as improved contrast by means of energy windowing. For that reason, we are exploring the feasibility and performance of PCA pixel circuitry based on polycrystalline silicon. This material, unlike the crystalline silicon commonly used in photon counting detectors, lends itself toward the economic manufacture of radiation tolerant, monolithic large area (e.g., ∼43×43 cm2) devices. In this presentation, exploration of maximum count rate, a critical performance parameter for such devices, is reported. Methods: Count rate performance for a variety of pixel circuit designs was explored through detailed circuit simulations over a wide range of parameters (including pixel pitch and operating conditions) with the additional goal of preserving good energy resolution. The count rate simulations assume input events corresponding to a 72 kVp x-ray spectrum with 20 mm Al filtration interacting with a CZT detector at various input flux rates. Output count rates are determined at various photon energy threshold levels, and the percentage of counts lost (e.g., due to deadtime or pile-up) is calculated from the ratio of output to input counts. The energy resolution simulations involve thermal and flicker noise originating from each circuit element in a design. Results: Circuit designs compatible with pixel pitches ranging from 250 to 1000 µm that allow count rates over a megacount per second per pixel appear feasible. Such rates are expected to be suitable for radiographic and fluoroscopic imaging. Results for the analog front-end circuitry of the pixels show that acceptable energy resolution can also be achieved. Conclusion: PCAs created using polycrystalline silicon have the potential to offer monolithic large-area detectors with count rate performance comparable to those of crystalline silicon detectors. Further improvement through detailed circuit

Silicon materials task of the Low Cost Solar Array Project: Effect of impurities and processing on silicon solar cells

Science.gov (United States)

Hopkins, R. H.; Davis, J. R.; Rohatgi, A.; Hanes, M. H.; Rai-Choudhury, P.; Mollenkopf, H. C.

1982-01-01

The effects of impurities and processing on the characteristics of silicon and terrestrial silicon solar cells were defined in order to develop cost benefit relationships for the use of cheaper, less pure solar grades of silicon. The amount of concentrations of commonly encountered impurities that can be tolerated in typical p or n base solar cells was established, then a preliminary analytical model from which the cell performance could be projected depending on the kinds and amounts of contaminants in the silicon base material was developed. The impurity data base was expanded to include construction materials, and the impurity performace model was refined to account for additional effects such as base resistivity, grain boundary interactions, thermal processing, synergic behavior, and nonuniform impurity distributions. A preliminary assessment of long term (aging) behavior of impurities was also undertaken.

A surface code quantum computer in silicon

Science.gov (United States)

Hill, Charles D.; Peretz, Eldad; Hile, Samuel J.; House, Matthew G.; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y.; Hollenberg, Lloyd C. L.

2015-01-01

The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel—posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited. PMID:26601310

A surface code quantum computer in silicon.

Science.gov (United States)

Hill, Charles D; Peretz, Eldad; Hile, Samuel J; House, Matthew G; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y; Hollenberg, Lloyd C L

2015-10-01

The exceptionally long quantum coherence times of phosphorus donor nuclear spin qubits in silicon, coupled with the proven scalability of silicon-based nano-electronics, make them attractive candidates for large-scale quantum computing. However, the high threshold of topological quantum error correction can only be captured in a two-dimensional array of qubits operating synchronously and in parallel-posing formidable fabrication and control challenges. We present an architecture that addresses these problems through a novel shared-control paradigm that is particularly suited to the natural uniformity of the phosphorus donor nuclear spin qubit states and electronic confinement. The architecture comprises a two-dimensional lattice of donor qubits sandwiched between two vertically separated control layers forming a mutually perpendicular crisscross gate array. Shared-control lines facilitate loading/unloading of single electrons to specific donors, thereby activating multiple qubits in parallel across the array on which the required operations for surface code quantum error correction are carried out by global spin control. The complexities of independent qubit control, wave function engineering, and ad hoc quantum interconnects are explicitly avoided. With many of the basic elements of fabrication and control based on demonstrated techniques and with simulated quantum operation below the surface code error threshold, the architecture represents a new pathway for large-scale quantum information processing in silicon and potentially in other qubit systems where uniformity can be exploited.

The effect of lance geometry and carbon coating of silicon lances on propidium iodide uptake in lance array nanoinjection of HeLa 229 cells

Science.gov (United States)

Sessions, John W.; Lindstrom, Dallin L.; Hanks, Brad W.; Hope, Sandra; Jensen, Brian D.

2016-04-01

Connecting technology to biologic discovery is a core focus of non-viral gene therapy biotechnologies. One approach that leverages both the physical and electrical function of microelectromechanical systems (MEMS) in cellular engineering is a technology previously described as lance array nanoinjection (LAN). In brief, LAN consists of a silicon chip measuring 2 cm by 2 cm that has been etched to contain an array of 10 μm tall, solid lances that are spaced every 10 μm in a grid pattern. This array of lances is used to physically penetrate hundreds of thousands of cells simultaneously and to then electrically deliver molecular loads into cells. In this present work, two variables related to the microfabrication of the silicon lances, namely lance geometry and coating, are investigated. The purpose of both experimental variables is to assess these parameters’ effect on propidium iodide (PI), a cell membrane impermeable dye, uptake to injected HeLa 229 cells. For the lance geometry experimentation, three different microfabricated lance geometries were used which include a flat/narrow (FN, 1 μm diameter), flat/wide (FW, 2-2.5 μm diameter), and pointed (P, 1 μm diameter) lance geometries. From these tests, it was shown that the FN lances had a slightly better cell viability rate of 91.73% and that the P lances had the best PI uptake rate of 75.08%. For the lance coating experimentation, two different lances were fabricated, both silicon etched lances with some being carbon coated (CC) in a  <100 nm layer of carbon and the other lances being non-coated (Si). Results from this experiment showed no significant difference between lance types at three different nanoinjection protocols (0V, +1.5V DC, and  +5V Pulsed) for both cell viability and PI uptake rates. One exception to this is the comparison of CC/5V Pul and Si/5V Pul samples, where the CC/5V Pul samples had a cell viability rate 5% higher. Both outcomes were unexpected and reveal how to better

Bundle Block Adjustment of Airborne Three-Line Array Imagery Based on Rotation Angles

Directory of Open Access Journals (Sweden)

Yongjun Zhang

2014-05-01

Full Text Available In the midst of the rapid developments in electronic instruments and remote sensing technologies, airborne three-line array sensors and their applications are being widely promoted and plentiful research related to data processing and high precision geo-referencing technologies is under way. The exterior orientation parameters (EOPs, which are measured by the integrated positioning and orientation system (POS of airborne three-line sensors, however, have inevitable systematic errors, so the level of precision of direct geo-referencing is not sufficiently accurate for surveying and mapping applications. Consequently, a few ground control points are necessary to refine the exterior orientation parameters, and this paper will discuss bundle block adjustment models based on the systematic error compensation and the orientation image, considering the principle of an image sensor and the characteristics of the integrated POS. Unlike the models available in the literature, which mainly use a quaternion to represent the rotation matrix of exterior orientation, three rotation angles are directly used in order to effectively model and eliminate the systematic errors of the POS observations. Very good experimental results have been achieved with several real datasets that verify the correctness and effectiveness of the proposed adjustment models.

Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

DEFF Research Database (Denmark)

Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

2016-01-01

-division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-oninsulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror......, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained...

Low-loss compact multilayer silicon nitride platform for 3D photonic integrated circuits.

Science.gov (United States)

Shang, Kuanping; Pathak, Shibnath; Guan, Binbin; Liu, Guangyao; Yoo, S J B

2015-08-10

We design, fabricate, and demonstrate a silicon nitride (Si(3)N(4)) multilayer platform optimized for low-loss and compact multilayer photonic integrated circuits. The designed platform, with 200 nm thick waveguide core and 700 nm interlayer gap, is compatible for active thermal tuning and applicable to realizing compact photonic devices such as arrayed waveguide gratings (AWGs). We achieve ultra-low loss vertical couplers with 0.01 dB coupling loss, multilayer crossing loss of 0.167 dB at 90° crossing angle, 50 μm bending radius, 100 × 2 μm(2) footprint, lateral misalignment tolerance up to 400 nm, and less than -52 dB interlayer crosstalk at 1550 nm wavelength. Based on the designed platform, we demonstrate a 27 × 32 × 2 multilayer star coupler.

Ageing effects on the wettability behavior of laser textured silicon

International Nuclear Information System (INIS)

Nunes, B.; Serro, A.P.; Oliveira, V.; Montemor, M.F.; Alves, E.; Saramago, B.; Colaco, R.

2011-01-01

In the present work we investigate the ageing of acid cleaned femtosecond laser textured silicon surfaces. Changes in the surface structure and chemistry were analysed by Rutherford backscattering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS), in order to explain the variation with time of the water contact angles of the laser textured surfaces. It is shown that highly hydrophobic silicon surfaces are obtained immediately after laser texturing and cleaning with acid solutions (water contact angle > 120 o ). However these surfaces are not stable and ageing leads to a decrease of the water contact angle which reaches a value of 80 o . XPS analysis of the surfaces shows that the growth of the native oxide layer is most probably responsible for this behavior.

Adhesion of Pseudomonas aeruginosa and Staphylococcus epidermidis to silicone-hydrogel contact lenses.

Science.gov (United States)

Henriques, Mariana; Sousa, Cláudia; Lira, Madalena; Elisabete, M; Oliveira, Real; Oliveira, Rosário; Azeredo, Joana

2005-06-01

The purpose of this study is to compare the adhesion capabilities of the most important etiologic agents of microbial ocular infection to the recently available silicone-hydrogel lenses with those to a conventional hydrogel lens. In vitro static adhesion assays of Pseudomonas aeruginosa 10,145, Staphylococcus epidermidis 9142 (biofilm-positive), and 12,228 (biofilm-negative) to two extended-wear silicone-hydrogel lenses (balafilcon A and lotrafilcon A), a daily wear silicone-hydrogel lens (galyfilcon A) and a conventional hydrogel (etafilcon A) were performed. To interpret the adhesion results, lens surface relative hydrophobicity was assessed by water contact angle measurements. P. aeruginosa and S. epidermidis 9142 exhibited greater adhesion capabilities to the extended wear silicone-hydrogel lenses than to the daily wear silicone- and conventional hydrogel lenses (p adhesion extent of these strains to galyfilcon A and etafilcon A. The biofilm negative strain of S. epidermidis adhered in larger extents to the silicone-hydrogel lenses than to the conventional hydrogel (p contact angle measurements revealed that the extended wear silicone-hydrogel lenses are hydrophobic, whereas the daily wear silicone- and conventional hydrogel lenses are hydrophilic. As a result of their hydrophobicity, the extended wear silicone-hydrogel lenses (lotrafilcon A and balafilcon A) may carry higher risk of microbial contamination than both the hydrophilic daily wear silicone-hydrogel lens, galyfilcon A and the conventional hydrogel lens, etafilcon A.

ELECTROMAGNETIC SCATTERING AND ANTENNA TECHNOLOGY (EMSAT) Task Order 0003: Design of a Circularly Polarized, 20 60 GHZ Active Phased Array for Wide Angle Scanning

Science.gov (United States)

2017-08-08

previously published linear -to-circular polarizers. This is because the first sheet has a low inductance in the -direction, which acts as a wire-grid...GHZ Active Phased Array for Wide Angle Scanning Carl R. Pfeiffer Defense Engineering Corporation Boris Tomasic Multispectral Sensing and...GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 62204F/61102F 6. AUTHOR(S) Carl R. Pfeiffer (Defense Engineering Corporation) Boris Tomasic (AFRL

Propagation of rotational Risley-prism-array-based Gaussian beams in turbulent atmosphere

Science.gov (United States)

Chen, Feng; Ma, Haotong; Dong, Li; Ren, Ge; Qi, Bo; Tan, Yufeng

2018-03-01

Limited by the size and weight of prism and optical assembling, Rotational Risley-prism-array system is a simple but effective way to realize high power and superior beam quality of deflecting laser output. In this paper, the propagation of the rotational Risley-prism-array-based Gaussian beam array in atmospheric turbulence is studied in detail. An analytical expression for the average intensity distribution at the receiving plane is derived based on nonparaxial ray tracing method and extended Huygens-Fresnel principle. Power in the diffraction-limited bucket is chosen to evaluate beam quality. The effect of deviation angle, propagation distance and intensity of turbulence on beam quality is studied in detail by quantitative simulation. It reveals that with the propagation distance increasing, the intensity distribution gradually evolves from multiple-petal-like shape into the pattern that contains one main-lobe in the center with multiple side-lobes in weak turbulence. The beam quality of rotational Risley-prism-array-based Gaussian beam array with lower deviation angle is better than its counterpart with higher deviation angle when propagating in weak and medium turbulent (i.e. Cn2 beam quality of higher deviation angle arrays degrades faster as the intensity of turbulence gets stronger. In the case of propagating in strong turbulence, the long propagation distance (i.e. z > 10km ) and deviation angle have no influence on beam quality.

Topological investigation of electronic silicon nanoparticulate aggregates using ultra-small-angle X-ray scattering

International Nuclear Information System (INIS)

Jonah, E. O.; Britton, D. T.; Beaucage, P.; Rai, D. K.; Beaucage, G.; Magunje, B.; Ilavsky, J.; Scriba, M. R.; Härting, M.

2012-01-01

The network topology of two types of silicon nanoparticles, produced by high energy milling and pyrolysis of silane, in layers deposited from inks on permeable and impermeable substrates has been quantitatively characterized using ultra-small-angle X-ray scattering, supported by scanning electron microscopy observations. The milled particles with a highly polydisperse size distribution form agglomerates, which in turn cluster to form larger aggregates with a very high degree of aggregation. Smaller nanoparticles with less polydisperse size distribution synthesized by thermal catalytic pyrolysis of silane form small open clusters. The Sauter mean diameters of the primary particles of the two types of nanoparticles were obtained from USAXS particle volume to surface ratio, with values of ∼41 and ∼21 nm obtained for the high energy milled and pyrolysis samples, respectively. Assuming a log-normal distribution of the particles, the geometric standard deviation of the particles was calculated to be ∼1.48 for all the samples, using parameters derived from the unified fit to the USAXS data. The flow properties of the inks and substrate combination lead to quantitative changes in the mean particle separation, with slowly curing systems with good capillary flow resulting in denser networks with smaller aggregates and better contact between particles.

Tests Of Array Of Flush Pressure Sensors

Science.gov (United States)

Larson, Larry J.; Moes, Timothy R.; Siemers, Paul M., III

1992-01-01

Report describes tests of array of pressure sensors connected to small orifices flush with surface of 1/7-scale model of F-14 airplane in wind tunnel. Part of effort to determine whether pressure parameters consisting of various sums, differences, and ratios of measured pressures used to compute accurately free-stream values of stagnation pressure, static pressure, angle of attack, angle of sideslip, and mach number. Such arrays of sensors and associated processing circuitry integrated into advanced aircraft as parts of flight-monitoring and -controlling systems.

Degree-of-Freedom Strengthened Cascade Array for DOD-DOA Estimation in MIMO Array Systems.

Science.gov (United States)

Yao, Bobin; Dong, Zhi; Zhang, Weile; Wang, Wei; Wu, Qisheng

2018-05-14

In spatial spectrum estimation, difference co-array can provide extra degrees-of-freedom (DOFs) for promoting parameter identifiability and parameter estimation accuracy. For the sake of acquiring as more DOFs as possible with a given number of physical sensors, we herein design a novel sensor array geometry named cascade array. This structure is generated by systematically connecting a uniform linear array (ULA) and a non-uniform linear array, and can provide more DOFs than some exist array structures but less than the upper-bound indicated by minimum redundant array (MRA). We further apply this cascade array into multiple input multiple output (MIMO) array systems, and propose a novel joint direction of departure (DOD) and direction of arrival (DOA) estimation algorithm, which is based on a reduced-dimensional weighted subspace fitting technique. The algorithm is angle auto-paired and computationally efficient. Theoretical analysis and numerical simulations prove the advantages and effectiveness of the proposed array structure and the related algorithm.

Deep Ultraviolet Macroporous Silicon Filters, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This SBIR Phase I proposal describes a novel method to make deep and far UV optical filters from macroporous silicon. This type of filter consists of an array of...

Angle independent velocity spectrum determination

DEFF Research Database (Denmark)

2014-01-01

An ultrasound imaging system (100) includes a transducer array (102) that emits an ultrasound beam and produces at least one transverse pulse-echo field that oscillates in a direction transverse to the emitted ultrasound beam and that receive echoes produced in response thereto and a spectral vel...... velocity estimator (110) that determines a velocity spectrum for flowing structure, which flows at an angle of 90 degrees and flows at angles less than 90 degrees with respect to the emitted ultrasound beam, based on the received echoes....

Novel micromachined on-chip 10-elements wire-grid array operating at 60 GHz

KAUST Repository

Sallam, Mai O.

2017-06-07

This paper presents a new topology for a wire-grid antenna array which operates at 60 GHz. The array consists of ten λ/2 dipole radiators connected via non-radiating connectors. Both radiators and connectors are placed on top of narrow silicon walls. The antenna is fed with a coplanar microstrip lines placed at the other side of the wafer and is connected with its feeding transmission lines using through-silicon-vias. The antenna is optimized for two cases: using high- and low-resistivity silicon substrates. The former has better radiation characteristics while the later is more compatible with the driving electronic circuits. The antenna has high directivity, reasonable bandwidth and high polarization purity.

Amorphous silicon based radiation detectors

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Qureshi, S.; Wildermuth, D.; Fujieda, I.; Street, R.A.

1991-07-01

We describe the characteristics of thin(1 μm) and thick (>30μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. 13 refs., 7 figs

A theoretical approach to photosynthetically active radiation silicon sensor

International Nuclear Information System (INIS)

Tamasi, M.J.L.; Martínez Bogado, M.G.

2013-01-01

This paper presents a theoretical approach for the development of low cost radiometers to measure photosynthetically active radiation (PAR). Two alternatives are considered: a) glass optical filters attached to a silicon sensor, and b) dielectric coating on a silicon sensor. The devices proposed are based on radiometers previously developed by the Argentine National Atomic Energy Commission. The objective of this work is to adapt these low cost radiometers to construct reliable instruments for measuring PAR. The transmittance of optical filters and sensor response have been analyzed for different dielectric materials, number of layers deposited, and incidence angles. Uncertainties in thickness of layer deposition were evaluated. - Highlights: • Design of radiometers to measure photosynthetically active radiation • The study has used a filter and a Si sensor to modify spectral response. • Dielectric multilayers on glass and silicon sensor • Spectral response related to different incidence angles, materials and spectra

Characterization of a patch-clamp microchannel array towards neuronal networks analysis

DEFF Research Database (Denmark)

Alberti, Massimo; Snakenborg, Detlef; Lopacinska, Joanna M.

2010-01-01

for simultaneous patch clamping of cultured cells or neurons in the same network. A disposable silicon/silicon dioxide (Si/SiO2) chip with a microhole array was integrated in a microfluidic system for cell handling, perfusion and electrical recording. Fluidic characterization showed that our PC mu CA can work...

Electrochemically replicated smooth aluminum foils for anodic alumina nanochannel arrays

International Nuclear Information System (INIS)

Biring, Sajal; Tsai, K-T; Sur, Ujjal Kumar; Wang, Y-L

2008-01-01

A fast electrochemical replication technique has been developed to fabricate large-scale ultra-smooth aluminum foils by exploiting readily available large-scale smooth silicon wafers as the masters. Since the adhesion of aluminum on silicon depends on the time of surface pretreatment in water, it is possible to either detach the replicated aluminum from the silicon master without damaging the replicated aluminum and master or integrate the aluminum film to the silicon substrate. Replicated ultra-smooth aluminum foils are used for the growth of both self-organized and lithographically guided long-range ordered arrays of anodic alumina nanochannels without any polishing pretreatment

Metasurface-based angle-selective multichannel acoustic refractor

Science.gov (United States)

Liu, Bingyi; Jiang, Yongyuan

2018-05-01

We theoretically study the angle-selective refractions of an impedance-matched acoustic gradient-index metasurface, which is integrated with a rigid bar array of a deep subwavelength period. An interesting refraction order appears under the all-angle incidence despite the existence of a critical angle, and notably, the odevity of the phase-discretization level apparently selects the transmitted diffraction orders. We utilize the strategy of multilayered media design to realize a three-channel acoustic refractor, which shows good promise for constructing multifunctional diffractive acoustic elements for acoustic communication.

Generation and manipulation of entangled photons on silicon chips

Directory of Open Access Journals (Sweden)

Matsuda Nobuyuki

2016-08-01

Full Text Available Integrated quantum photonics is now seen as one of the promising approaches to realize scalable quantum information systems. With optical waveguides based on silicon photonics technologies, we can realize quantum optical circuits with a higher degree of integration than with silica waveguides. In addition, thanks to the large nonlinearity observed in silicon nanophotonic waveguides, we can implement active components such as entangled photon sources on a chip. In this paper, we report recent progress in integrated quantum photonic circuits based on silicon photonics. We review our work on correlated and entangled photon-pair sources on silicon chips, using nanoscale silicon waveguides and silicon photonic crystal waveguides. We also describe an on-chip quantum buffer realized using the slow-light effect in a silicon photonic crystal waveguide. As an approach to combine the merits of different waveguide platforms, a hybrid quantum circuit that integrates a silicon-based photon-pair source and a silica-based arrayed waveguide grating is also presented.

Electrochemical detection of dopamine using arrays of liquid-liquid micro-interfaces created within micromachined silicon membranes

International Nuclear Information System (INIS)

Berduque, Alfonso; Zazpe, Raul; Arrigan, Damien W.M.

2008-01-01

The detection of protonated dopamine by differential pulse voltammetry (DPV) and square wave voltammetry (SWV) at arrays of micro-interfaces between two immiscible electrolyte solutions (μITIES) is presented. Microfabricated porous silicon membranes (consisting of eight pores, 26.6 μm in radius and 500 μm pore-pore separation, in a hexagonal layout) were prepared by photolithographic and etching procedures. The membrane pores were fabricated with hydrophobic internal walls so that the organic phase filled the pores and created the liquid interface at the aqueous side of the membrane. These were used for harnessing the benefits of three-dimensional diffusion to the interface and for interface stabilisation. The liquid-liquid interface provides a simple method to overcome the major problem in the voltammetric detection of dopamine at solid electrodes due to the co-existence of ascorbate at higher concentrations. Selectivity for dopamine over ascorbate was achieved by the use of dibenzo-18-crown-6 (DB18C6) for the facilitated ion transfer of dopamine across the μITIES array. Under these conditions, the presence of ascorbate in excess did not interfere in the detection of dopamine and the lowest concentration detectable was ca. 0.5 μM. In addition, the drawback of current signal saturation (non-linear increase of the peak current with the concentration of dopamine) observed at conventional (millimetre-sized) liquid-liquid interfaces was overcome using the microfabricated porous membranes

Silicon Wafer-Based Platinum Microelectrode Array Biosensor for Near Real-Time Measurement of Glutamate in Vivo

Directory of Open Access Journals (Sweden)

Nigel T. Maidment

2008-08-01

Full Text Available Using Micro-Electro-Mechanical-Systems (MEMS technologies, we have developed silicon wafer-based platinum microelectrode arrays (MEAs modified with glutamate oxidase (GluOx for electroenzymatic detection of glutamate in vivo. These MEAs were designed to have optimal spatial resolution for in vivo recordings. Selective detection of glutamate in the presence of the electroactive interferents, dopamine and ascorbic acid, was attained by deposition of polypyrrole and Nafion. The sensors responded to glutamate with a limit of detection under 1μM and a sub-1-second response time in solution. In addition to extensive in vitro characterization, the utility of these MEA glutamate biosensors was also established in vivo. In the anesthetized rat, these MEA glutamate biosensors were used for detection of cortically-evoked glutamate release in the ventral striatum. The MEA biosensors also were applied to the detection of stress-induced glutamate release in the dorsal striatum of the freely-moving rat.

Ultrasound beam characteristics of a symmetric nodal origami based array

Science.gov (United States)

Bilgunde, Prathamesh N.; Bond, Leonard J.

2018-04-01

Origami-the ancient art of paper folding-is being explored in acoustics for effective focusing of sound. In this short communication, we present a numerical investigation of beam characteristics for an origami based ultrasound array. A spatial re-configuration of array elements is performed based upon the symmetric nodal origami. The effect of fold angle on the ultrasound beam is evaluated using frequency domain and transient finite element analysis. It was found that increase in the fold angle reduces near field length by 58% and also doubles the beam intensity as compared to the linear array. Transient analysis also indicated 80% reduction in the -6dB beam width, which can improve the lateral resolution of phased array. Such a spatially re-configurable array could potentially be used in the future to reduce the cost of electronics in the phased array instrumentation.

Field assisted photoemission by silicon photocathodes

International Nuclear Information System (INIS)

Aboubacar, A.; Dupont, M.; El Manouni, A.; Querrou, M.; Says, L.P.

1991-01-01

Silicon photocathodes with arrays of tips have been prepared using microlithographic techniques. Current emission due to field effect has been measured in the case of heavy and weakly doped boron Silicon. An Argon continuous laser has been used to produce photocurrent. An instantaneous current (600 μA) with a moderate laser power (83 mW), has been produced on weakly doped photocathodes. This current corresponds to an average quantum yield (purely photoelectric) of about 1.7%, and a local current density in the range of a few 10 6 A m -2

Continuous Czochralski growth: Silicon sheet growth development of the large area sheet task of the low cost silicon solar array project

Science.gov (United States)

Johnson, C. M.

1980-12-01

The growth of 100 kg of silicon single crystal material, ten cm in diameter or greater, and 150 kg of silicon single crystal material 15 cm or greater utilizing one common silicon container material (one crucible) is investigated. A crystal grower that is recharged with a new supply of polysilicon material while still under vacuum and at temperatures above the melting point of silicon is developed. It accepts large polysilicon charges up to 30 kg, grows large crystal ingots (to 15 cm diameter and 25 kg in weight), and holds polysilicon material for recharging (rod or lump) while, at the same time, growing crystal ingots. Special equipment is designed to recharge polysilicon rods, recharge polysilicon lumps, and handle and store large, hot silicon crystal ingots. Many continuous crystal growth runs were performed lasting as long as 109 hours and producing as many as ten crystal ingots, 15 cm with weights progressing to 27 kg.

Standard practice for radiological examination using digital detector arrays

CERN Document Server

American Society for Testing and Materials. Philadelphia

2010-01-01

1.1 This practice establishes the minimum requirements for radiological examination for metallic and nonmetallic material using a digital detector array (DDA) system. 1.2 The requirements in this practice are intended to control the quality of radiologic images and are not intended to establish acceptance criteria for parts or materials. 1.3 This practice covers the radiologic examination with DDAs including DDAs described in Practice E2597 such as a device that contains a photoconductor attached to a Thin Film Transistor (TFT) read out structure, a device that has a phosphor coupled directly to an amorphous silicon read-out structure, and devices where a phosphor is coupled to a CMOS (Complementary metal–oxide–semiconductor) array, a Linear Detector Array (LDA) or a CCD (charge coupled device) crystalline silicon read-out structure. 1.4 The DDA shall be selected for an NDT application based on knowledge of the technology described in Guide , and of the selected DDA properties provided by the manufactu...

Gate protective device for SOS array

Science.gov (United States)

Meyer, J. E., Jr.; Scott, J. H.

1972-01-01

Protective gate device consisting of alternating heavily doped n(+) and p(+) diffusions eliminates breakdown voltages in silicon oxide on sapphire arrays caused by electrostatic discharge from person or equipment. Diffusions are easily produced during normal double epitaxial processing. Devices with nine layers had 27-volt breakdown.

Fast timing readout for silicon strip detectors

International Nuclear Information System (INIS)

Jhingan, A.; Saneesh, N.; Kumar, M.

2016-01-01

The development and performance of a 16 channel hybrid fast timing amplifier (FTA), for extracting timing information from silicon strip detectors (SSD), is described. The FTA will be used in a time of flight (TOF) measurement, in which one SSD is used to obtain the ion velocity (A) as well as the energy information of a scattered particle. The TOF information with a thin transmission SSD, acting as ΔE detector (Z) in a detector telescope, will provide a unique detection system for the identification of reaction products in the slowed down beam campaign of low energy branch (LEB) at NUSTAR-FAIR. Such a system will also provide large solid angle coverage with ~ 100% detection efficiency, and adequate segmentation for angular information. A good timing resolution (≤ 100 ps) enables to have shorter flight paths, thus a closely packed 4π array should be feasible. Preamplifiers for energy readout in SSD are easily available. A major constraint with SSDs is the missing high density multichannel preamplifiers which can provide both fast timing as well as energy. Provision of both timing and energy processing, generally makes circuit bulky, with higher power consumption, which may not be suitable in SSD arrays. In case of DSSSD, the problem was overcome by using timing from one side and energy from the other side. A custom designed 16 channel FTA has been developed for DSSSD design W from Micron Semiconductors, UK

Development of an oxidized porous silicon vacuum microtriode

Energy Technology Data Exchange (ETDEWEB)

Smith, II, Don Deewayne [Texas A & M Univ., College Station, TX (United States)

1994-05-01

In order to realize a high-power microwave amplifier design known as a gigatron, a gated field emission array must be developed that can deliver a high-intensity electron beam at gigahertz frequencies. No existing field emission device meets the requirements for a gigatron cathode. In the present work, a porous silicon-based approach is evaluated. The use of porous silicon reduces the size of a single emitter to the nanometer scale, and a true two-dimensional array geometry can be approached. A wide number of applications for such a device exist in various disciplines. Oxidized porous silicon vacuum diodes were first developed in 1990. No systematic study had been done to characterize the performance of these devices as a function of the process parameters. The author has done the first such study, fabricating diodes from p<100>, p<111>, and n<100> silicon substrates. Anodization current densities from 11 mA/cm² to 151 mA/cm² were used, and Fowler-Nordheim behavior was observed in over 80% of the samples. In order to effectively adapt this technology to mainstream vacuum microelectronic applications, a means of creating a gated triodic structure must be found. No previous attempts had successfully yielded such a device. The author has succeeded in utilizing a novel metallization method to fabricate the first operational oxidized porous silicon vacuum microtriodes, and results are encouraging.

Formation of Mach angle profiles during wet etching of silica and silicon nitride materials

Energy Technology Data Exchange (ETDEWEB)

Ghulinyan, M., E-mail: ghulinyan@fbk.eu [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Bernard, M.; Bartali, R. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy); Deptartment of Physics, University of Trento, I-38123 Povo (Italy); Pucker, G. [Centre for Materials and Microsystems, Fondazione Bruno Kessler, I-38123 Povo (Italy)

2015-12-30

Highlights: • Photoresist adhesion induces the formation of complex etch profiles in dielectrics. • Hydrofluoric acid etching of silica glass and silicon nitride materials was studied. • The phenomenon has been modeled in analogy with sonic boom propagation. • The material etch rate and resist adhesion/erosion define the final profile. - Abstract: In integrated circuit technology peeling of masking photoresist films is a major drawback during the long-timed wet etching of materials. It causes an undesired film underetching, which is often accompanied by a formation of complex etch profiles. Here we report on a detailed study of wedge-shaped profile formation in a series of silicon oxide, silicon oxynitride and silicon nitride materials during wet etching in a buffered hydrofluoric acid (BHF) solution. The shape of etched profiles reflects the time-dependent adhesion properties of the photoresist to a particular material and can be perfectly circular, purely linear or a combination of both, separated by a knee feature. Starting from a formal analogy between the sonic boom propagation and the wet underetching process, we model the wedge formation mechanism analytically. This model predicts the final form of the profile as a function of time and fits the experimental data perfectly. We discuss how this knowledge can be extended to the design and the realization of optical components such as highly efficient etch-less vertical tapers for passive silicon photonics.

Optoelectronic properties of Black-Silicon generated through inductively coupled plasma (ICP) processing for crystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Hirsch, Jens, E-mail: J.Hirsch@emw.hs-anhalt.de [Anhalt University of Applied Sciences, Faculty EMW, Bernburger Str. 55, DE-06366 Köthen (Germany); Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eißfeldt-Str. 12, DE-06120 Halle (Saale) (Germany); Gaudig, Maria; Bernhard, Norbert [Anhalt University of Applied Sciences, Faculty EMW, Bernburger Str. 55, DE-06366 Köthen (Germany); Lausch, Dominik [Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eißfeldt-Str. 12, DE-06120 Halle (Saale) (Germany)

2016-06-30

Highlights: • Fabrication of black silicon through inductively coupled plasma (ICP) processing. • Suppressed formation a self-bias and therefore a reduced ion bombardment of the silicon sample. • Reduction of the average hemispherical reflection between 300 and 1120 nm up to 8% within 5 min ICP process time. • Reflection is almost independent of the angle of incidence up to 60°. • 2.5 ms effective lifetime at 10{sup 15} cm{sup −3} MCD after ALD Al{sub 2}O{sub 3} surface passivation. - Abstract: The optoelectronic properties of maskless inductively coupled plasma (ICP) generated black silicon through SF{sub 6} and O{sub 2} are analyzed by using reflection measurements, scanning electron microscopy (SEM) and quasi steady state photoconductivity (QSSPC). The results are discussed and compared to capacitively coupled plasma (CCP) and industrial standard wet chemical textures. The ICP process forms parabolic like surface structures in a scale of 500 nm. This surface structure reduces the average hemispherical reflection between 300 and 1120 nm up to 8%. Additionally, the ICP texture shows a weak increase of the hemispherical reflection under tilted angles of incidence up to 60°. Furthermore, we report that the ICP process is independent of the crystal orientation and the surface roughness. This allows the texturing of monocrystalline, multicrystalline and kerf-less wafers using the same parameter set. The ICP generation of black silicon does not apply a self-bias on the silicon sample. Therefore, the silicon sample is exposed to a reduced ion bombardment, which reduces the plasma induced surface damage. This leads to an enhancement of the effective charge carrier lifetime up to 2.5 ms at 10{sup 15} cm{sup −3} minority carrier density (MCD) after an atomic layer deposition (ALD) with Al{sub 2}O{sub 3}. Since excellent etch results were obtained already after 4 min process time, we conclude that the ICP generation of black silicon is a promising technique

Chronic in vivo stability assessment of carbon fiber microelectrode arrays

Science.gov (United States)

Patel, Paras R.; Zhang, Huanan; Robbins, Matthew T.; Nofar, Justin B.; Marshall, Shaun P.; Kobylarek, Michael J.; Kozai, Takashi D. Y.; Kotov, Nicholas A.; Chestek, Cynthia A.

2016-12-01

Objective. Individual carbon fiber microelectrodes can record unit activity in both acute and semi-chronic (∼1 month) implants. Additionally, new methods have been developed to insert a 16 channel array of carbon fiber microelectrodes. Before assessing the in vivo long-term viability of these arrays, accelerated soak tests were carried out to determine the most stable site coating material. Next, a multi-animal, multi-month, chronic implantation study was carried out with carbon fiber microelectrode arrays and silicon electrodes. Approach. Carbon fibers were first functionalized with one of two different formulations of PEDOT and subjected to accelerated aging in a heated water bath. After determining the best PEDOT formula to use, carbon fiber arrays were chronically implanted in rat motor cortex. Some rodents were also implanted with a single silicon electrode, while others received both. At the end of the study a subset of animals were perfused and the brain tissue sliced. Tissue sections were stained for astrocytes, microglia, and neurons. The local reactive responses were assessed using qualitative and quantitative methods. Main results. Electrophysiology recordings showed the carbon fibers detecting unit activity for at least 3 months with average amplitudes of ∼200 μV. Histology analysis showed the carbon fiber arrays with a minimal to non-existent glial scarring response with no adverse effects on neuronal density. Silicon electrodes showed large glial scarring that impacted neuronal counts. Significance. This study has validated the use of carbon fiber microelectrode arrays as a chronic neural recording technology. These electrodes have demonstrated the ability to detect single units with high amplitude over 3 months, and show the potential to record for even longer periods. In addition, the minimal reactive response should hold stable indefinitely, as any response by the immune system may reach a steady state after 12 weeks.

A beam monitor using silicon pixel sensors for hadron therapy

Energy Technology Data Exchange (ETDEWEB)

Wang, Zhen, E-mail: zwang@mails.ccnu.edu.cn; Zou, Shuguang; Fan, Yan; Liu, Jun; Sun, Xiangming, E-mail: sphy2007@126.com; Wang, Dong; Kang, Huili; Sun, Daming; Yang, Ping; Pei, Hua; Huang, Guangming; Xu, Nu; Gao, Chaosong; Xiao, Le

2017-03-21

We report the design and test results of a beam monitor developed for online monitoring in hadron therapy. The beam monitor uses eight silicon pixel sensors, Topmetal-II{sup -}, as the anode array. Topmetal-II{sup -} is a charge sensor designed in a CMOS 0.35 µm technology. Each Topmetal-II{sup -} sensor has 72×72 pixels and the pixel size is 83×83 µm{sup 2}. In our design, the beam passes through the beam monitor without hitting the electrodes, making the beam monitor especially suitable for monitoring heavy ion beams. This design also reduces radiation damage to the beam monitor itself. The beam monitor is tested with a carbon ion beam at the Heavy Ion Research Facility in Lanzhou (HIRFL). Results indicate that the beam monitor can measure position, incidence angle and intensity of the beam with a position resolution better than 20 µm, angular resolution about 0.5° and intensity statistical accuracy better than 2%.

Geometric approach to the design of an imaging probe to evaluate the iridocorneal angle structures

Science.gov (United States)

Hong, Xun Jie Jeesmond; V. K., Shinoj; Murukeshan, V. M.; Baskaran, M.; Aung, Tin

2017-06-01

Photographic imaging methods allow the tracking of anatomical changes in the iridocorneal angle structures and the monitoring of treatment responses overtime. In this work, we aim to design an imaging probe to evaluate the iridocorneal angle structures using geometrical optics. We first perform an analytical analysis on light propagation from the anterior chamber of the eye to the exterior medium using Snell's law. This is followed by adopting a strategy to achieve uniform near field irradiance, by simplifying the complex non-rotational symmetric irradiance distribution of LEDs tilted at an angle. The optimization is based on the geometric design considerations of an angled circular ring array of 4 LEDs (or a 2 × 2 square LED array). The design equation give insights on variable parameters such as the illumination angle of the LEDs, ring array radius, viewing angle of the LEDs, and the working distance. A micro color CCD video camera that has sufficient resolution to resolve the iridocorneal angle structures at the required working distance is then chosen. The proposed design aspects fulfil the safety requirements recommended by the International Commission on Non-ionizing Radiation Protection.

Photovoltaic cell array

Science.gov (United States)

Eliason, J. T. (Inventor)

1976-01-01

A photovoltaic cell array consisting of parallel columns of silicon filaments is described. Each fiber is doped to produce an inner region of one polarity type and an outer region of an opposite polarity type to thereby form a continuous radial semi conductor junction. Spaced rows of electrical contacts alternately connect to the inner and outer regions to provide a plurality of electrical outputs which may be combined in parallel or in series.

A CMOS ASIC Design for SiPM Arrays.

Science.gov (United States)

Dey, Samrat; Banks, Lushon; Chen, Shaw-Pin; Xu, Wenbin; Lewellen, Thomas K; Miyaoka, Robert S; Rudell, Jacques C

2011-12-01

Our lab has previously reported on novel board-level readout electronics for an 8×8 silicon photomultiplier (SiPM) array featuring row/column summation technique to reduce the hardware requirements for signal processing. We are taking the next step by implementing a monolithic CMOS chip which is based on the row-column architecture. In addition, this paper explores the option of using diagonal summation as well as calibration to compensate for temperature and process variations. Further description of a timing pickoff signal which aligns all of the positioning (spatial channels) pulses in the array is described. The ASIC design is targeted to be scalable with the detector size and flexible to accommodate detectors from different vendors. This paper focuses on circuit implementation issues associated with the design of the ASIC to interface our Phase II MiCES FPGA board with a SiPM array. Moreover, a discussion is provided for strategies to eventually integrate all the analog and mixed-signal electronics with the SiPM, on either a single-silicon substrate or multi-chip module (MCM).

Functionalization of silicon nanowires by conductive and non-conductive polymers

Science.gov (United States)

Belhousse, S.; Tighilt, F.-Z.; Sam, S.; Lasmi, K.; Hamdani, K.; Tahanout, L.; Megherbi, F.; Gabouze, N.

2017-11-01

The work reports on the development of hybrid devices based on silicon nanowires (SiNW) with polymers and the difference obtained when using conductive and non-conductive polymers. SiNW have attracted much attention due to their importance in understanding the fundamental properties at low dimensionality as well as their potential application in nanoscale devices as in field effect transistors, chemical or biological sensors, battery electrodes and photovoltaics. SiNW arrays were formed using metal assisted chemical etching method. This process is simple, fast and allows obtaining a wide range of silicon nanostructures. Hydrogen-passivated SiNW surfaces show relatively poor stability. Surface modification with organic species confers the desired stability and enhances the surface properties. For this reason, this work proposes a covalent grafting of organic material onto SiNW surface. We have chosen a non-conductive polymer polyvinylpyrrolidone (PVP) and conductive polymers polythiophene (PTh) and polypyrrole (PPy), in order to evaluate the electric effect of the polymers on the obtained materials. The hybrid structures were elaborated by the polymerization of the corresponding conjugated monomers by electrochemical route; this electropolymerization offers several advantages such as simplicity and rapidity. SiNW functionalization by conductive polymers has shown to have a huge effect on the electrical mobility. Hybrid surface morphologies were characterized by scanning electron microscopy (SEM), infrared spectroscopy (FTIR-ATR) and contact angle measurements.

Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

International Nuclear Information System (INIS)

Wang, Q.; Gu, C.Z.; Li, J.J.; Wang, Z.L.; Shi, C.Y.; Xu, P.; Zhu, K.; Liu, Y.L.

2005-01-01

Porous silicon (PS) was etched by hydrogen plasma. On the surface a large number of silicon nanocone arrays and nanocrystallites were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced. Correspondingly, three emission centers including red, green, and blue emissions are shown to contribute to the enhanced photoluminescence of the H-etched PS, which originate from the recombination of trapped electrons with free holes due to Si=O bonding at the surface of the silicon nanocrystallites, the quantum size confinement effect, and oxygen vacancy in the surface SiO 2 layer, respectively. In particular, the increase of SiO x (x<2) formed on the surface of the H-etched porous silicon plays a very important role in enhancing the photoluminescence properties

The Influence of Structure Heights and Opening Angles of Micro- and Nanocones on the Macroscopic Surface Wetting Properties

Science.gov (United States)

Schneider, Ling; Laustsen, Milan; Mandsberg, Nikolaj; Taboryski, Rafael

2016-01-01

We discuss the influence of surface structure, namely the height and opening angles of nano- and microcones on the surface wettability. We show experimental evidence that the opening angle of the cones is the critical parameter on sample superhydrophobicity, namely static contact angles and roll-off angles. The textured surfaces are fabricated on silicon wafers by using a simple one-step method of reactive ion etching at different processing time and gas flow rates. By using hydrophobic coating or hydrophilic surface treatment, we are able to switch the surface wettability from superhydrophilic to superhydrophobic without altering surface structures. In addition, we show examples of polymer replicas (polypropylene and poly(methyl methacrylate) with different wettability, fabricated by injection moulding using templates of the silicon cone-structures. PMID:26892169

Fabrication of a 77 GHz Rotman Lens on a High Resistivity Silicon Wafer Using Lift-Off Process

Directory of Open Access Journals (Sweden)

Ali Attaran

2014-01-01

Full Text Available Fabrication of a high resistivity silicon based microstrip Rotman lens using a lift-off process has been presented. The lens features 3 beam ports, 5 array ports, 16 dummy ports, and beam steering angles of ±10 degrees. The lens was fabricated on a 200 μm thick high resistivity silicon wafer and has a footprint area of 19.7 mm × 15.6 mm. The lens was tested as an integral part of a 77 GHz radar where a tunable X band source along with an 8 times multiplier was used as the RF source and the resulting millimeter wave signal centered at 77 GHz was radiated through a lens-antenna combination. A horn antenna with a downconverter harmonic mixer was used to receive the radiated signal and display the received signal in an Advantest R3271A spectrum analyzer. The superimposed transmit and receive signal in the spectrum analyzer showed the proper radar operation confirming the Rotman lens design.

A measurement of Lorentz Angle of radiation-hard Pixel Sensors

CERN Document Server

Aleppo, M

2001-01-01

Silicon pixel detectors developed to meet LHC requirements were tested in a beam at CERN in the framework of the ATLAS collaboration. The experimental behaviour of irradiated and not-irradiated sensors in a magnetic field is discussed. The measurement of the Lorentz angle for these sensors at different operating conditions is presented. A simple model of the charge drift in silicon before and after irradiation is presented. The good agreement between the model predictions and the experimental results is shown.

Low cost silicon solar array project large area silicon sheet task: Silicon web process development

Science.gov (United States)

Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Blais, P. D.; Davis, J. R., Jr.

1977-01-01

Growth configurations were developed which produced crystals having low residual stress levels. The properties of a 106 mm diameter round crucible were evaluated and it was found that this design had greatly enhanced temperature fluctuations arising from convection in the melt. Thermal modeling efforts were directed to developing finite element models of the 106 mm round crucible and an elongated susceptor/crucible configuration. Also, the thermal model for the heat loss modes from the dendritic web was examined for guidance in reducing the thermal stress in the web. An economic analysis was prepared to evaluate the silicon web process in relation to price goals.

Superhydrophobic hierarchical arrays fabricated by a scalable colloidal lithography approach.

Science.gov (United States)

Kothary, Pratik; Dou, Xuan; Fang, Yin; Gu, Zhuxiao; Leo, Sin-Yen; Jiang, Peng

2017-02-01

Here we report an unconventional colloidal lithography approach for fabricating a variety of periodic polymer nanostructures with tunable geometries and hydrophobic properties. Wafer-sized, double-layer, non-close-packed silica colloidal crystal embedded in a polymer matrix is first assembled by a scalable spin-coating technology. The unusual non-close-packed crystal structure combined with a thin polymer film separating the top and the bottom colloidal layers render great versatility in templating periodic nanostructures, including arrays of nanovoids, nanorings, and hierarchical nanovoids. These different geometries result in varied fractions of entrapped air in between the templated nanostructures, which in turn lead to different apparent water contact angles. Superhydrophobic surfaces with >150° water contact angles and <5° contact angle hysteresis are achieved on fluorosilane-modified polymer hierarchical nanovoid arrays with large fractions of entrapped air. The experimental contact angle measurements are complemented with theoretical predictions using the Cassie's model to gain insights into the fundamental microstructure-dewetting property relationships. The experimental and theoretical contact angles follow the same trends as determined by the unique hierarchical structures of the templated periodic arrays. Copyright © 2016 Elsevier Inc. All rights reserved.

A silicon strip detector array for energy verification and quality assurance in heavy ion therapy.

Science.gov (United States)

Debrot, Emily; Newall, Matthew; Guatelli, Susanna; Petasecca, Marco; Matsufuji, Naruhiro; Rosenfeld, Anatoly B

2018-02-01

The measurement of depth dose profiles for range and energy verification of heavy ion beams is an important aspect of quality assurance procedures for heavy ion therapy facilities. The steep dose gradients in the Bragg peak region of these profiles require the use of detectors with high spatial resolution. The aim of this work is to characterize a one dimensional monolithic silicon detector array called the "serial Dose Magnifying Glass" (sDMG) as an independent ion beam energy and range verification system used for quality assurance conducted for ion beams used in heavy ion therapy. The sDMG detector consists of two linear arrays of 128 silicon sensitive volumes each with an effective size of 2mm × 50μm × 100μm fabricated on a p-type substrate at a pitch of 200 μm along a single axis of detection. The detector was characterized for beam energy and range verification by measuring the response of the detector when irradiated with a 290 MeV/u 12 C ion broad beam incident along the single axis of the detector embedded in a PMMA phantom. The energy of the 12 C ion beam incident on the detector and the residual energy of an ion beam incident on the phantom was determined from the measured Bragg peak position in the sDMG. Ad hoc Monte Carlo simulations of the experimental setup were also performed to give further insight into the detector response. The relative response profiles along the single axis measured with the sDMG detector were found to have good agreement between experiment and simulation with the position of the Bragg peak determined to fall within 0.2 mm or 1.1% of the range in the detector for the two cases. The energy of the beam incident on the detector was found to vary less than 1% between experiment and simulation. The beam energy incident on the phantom was determined to be (280.9 ± 0.8) MeV/u from the experimental and (280.9 ± 0.2) MeV/u from the simulated profiles. These values coincide with the expected energy of 281 MeV/u. The sDMG detector

Optimal design of aperiodic, vertical silicon nanowire structures for photovoltaics.

Science.gov (United States)

Lin, Chenxi; Povinelli, Michelle L

2011-09-12

We design a partially aperiodic, vertically-aligned silicon nanowire array that maximizes photovoltaic absorption. The optimal structure is obtained using a random walk algorithm with transfer matrix method based electromagnetic forward solver. The optimal, aperiodic structure exhibits a 2.35 times enhancement in ultimate efficiency compared to its periodic counterpart. The spectral behavior mimics that of a periodic array with larger lattice constant. For our system, we find that randomly-selected, aperiodic structures invariably outperform the periodic array.

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

Science.gov (United States)

Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2015-10-01

We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

Low-energy nuclear physics with high-segmentation silicon arrays

International Nuclear Information System (INIS)

Betts, R.R.; Univ. of Illinois, Chicago, IL

1994-01-01

A brief history is given of silicon detectors leading up to the development of ion-implanted strip detectors. Two examples of their use in low energy nuclear physics are discussed; the search for exotic alpha-chain states in 24 Mg and studies of anomalous positron-electron pairs produced in collisions of very heavy ions

Neutron spin echo scattering angle measurement (SESAME)

International Nuclear Information System (INIS)

Pynn, R.; Fitzsimmons, M.R.; Fritzsche, H.; Gierlings, M.; Major, J.; Jason, A.

2005-01-01

We describe experiments in which the neutron spin echo technique is used to measure neutron scattering angles. We have implemented the technique, dubbed spin echo scattering angle measurement (SESAME), using thin films of Permalloy electrodeposited on silicon wafers as sources of the magnetic fields within which neutron spins precess. With 30-μm-thick films we resolve neutron scattering angles to about 0.02 deg. with neutrons of 4.66 A wavelength. This allows us to probe correlation lengths up to 200 nm in an application to small angle neutron scattering. We also demonstrate that SESAME can be used to separate specular and diffuse neutron reflection from surfaces at grazing incidence. In both of these cases, SESAME can make measurements at higher neutron intensity than is available with conventional methods because the angular resolution achieved is independent of the divergence of the neutron beam. Finally, we discuss the conditions under which SESAME might be used to probe in-plane structure in thin films and show that the method has advantages for incident neutron angles close to the critical angle because multiple scattering is automatically accounted for

Advances on Frequency Diverse Array Radar and Its Applications

Directory of Open Access Journals (Sweden)

Wang Wenqin

2018-04-01

Full Text Available Unlike the conventional phased array that provides only angle-dependent transmit beampattern, Frequency Diverse Array (FDA employs a small frequency increment across its array elements to produce automatic beam scanning without requiring phase shifters or mechanical steering. FDA can produce both rangedependent and time-variant transmit beampatterns, which overcomes the disadvantages of conventional phased arrays that produce only angle-dependent beampattern. Thus, FDA has many promising applications. Based on a previous study conducted by the author, “Frequency Diverse Array Radar: Concept, Principle and Application” (Journal of Electronics & Information Technology, 2016, 38(4: 1000–1011, the current study introduces basic FDA radar concepts, principles, and application characteristics and reviews recent advances on FDA radar and its applications. In addition, several new promising applications of FDA technology are discussed, such as radar electronic warfare and radar-communications, as well as open technical challenges such as beampattern variance, effective receiver design, adaptive signal detection and estimation, and the implementation of practical FDA radar demos.

Burst annealing of electron damage in silicon solar cells

International Nuclear Information System (INIS)

Day, A.C.; Horne, W.E.; Thompson, M.A.; Lancaster, C.A.

1985-01-01

A study has been performed of burst annealing of electron damage in silicon solar cells. Three groups of cells consisting of 3 and 0.3 ohm-cm silicon were exposed to fluences of 2 x 10 to the 14th power, 4 x 10 to the 14th power, and 8 x 10 to the 14th power 1-MeV electrons/sq cm, respectively. They were subsequently subjected to 1-minute bursts of annealing at 500 C. The 3 ohm-cm cells showed complete recovery from each fluence level. The 0.3 ohm-cm cells showed complete recovery from the 2 x 10 to the 14th power e/sq cm fluence; however, some of the 0.3 ohm-cm cells did not recover completely from the higher influences. From an analysis of the results it is concluded that burst annealing of moderate to high resistivity silicon cell arrays in space is feasible and that with more complete understanding, even the potentially higher efficiency low resistivity cells may be usable in annealable arrays in space

Multimodal Electrothermal Silicon Microgrippers for Nanotube Manipulation

DEFF Research Database (Denmark)

Nordström Andersen, Karin; Petersen, Dirch Hjorth; Carlson, Kenneth

2009-01-01

Microgrippers that are able to manipulate nanoobjects reproducibly are key components in 3-D nanomanipulation systems. We present here a monolithic electrothermal microgripper prepared by silicon microfabrication, and demonstrate pick-and-place of an as-grown carbon nanotube from a 2-D array onto...

Anisotropic multi-spot DBR porous silicon chip for the detection of human immunoglobin G.

Science.gov (United States)

Cho, Bomin; Um, Sungyong; Sohn, Honglae

2014-07-01

Asymmetric porous silicon multilayer (APSM)-based optical biosensor was developed to specify human Immunoglobin G (Ig G). APSM chip was generated by an electrochemical etching of silicon wafer using an asymmetric electrode configuration in aqueous ethanolic HF solution and constituted with nine arrayed porous silicon multilayer. APSM prepared from anisotropic etching conditions displayed a sharp reflection resonance in the reflectivity spectrum. Each spot displayed single reflection resonance at different wavelengths as a function of the lateral distance from the Pt counter electrode. The sensor system was consisted of the 3 x 3 spot array of APSM modified with protein A. The system was probed with an aqueous human Ig G. Molecular binding and specificity was monitored as a shift in wavelength of reflection resonance.

Nonimaging concentrators for photovoltaic arrays in space

Science.gov (United States)

Winston, R.; Greenman, P.; Rockey, D.

1981-01-01

Two stage concentrators are studied in order to design an optimum concentrator for photovoltaic arrays in space. The study is directed at designs with two-dimensional geometries because they are better suited to moderate concentrations of about 10 X to 50 X, and because the instantaneous flux distribution is more uniform. It is found that with an f/0.5 primary, where f is the focal length of the primary, the flux distribution is very smooth regardless of the angle of incidence of the radiation. As the focal ratio is increased, peaks in the distribution begin to appear. The nonuniformities can be reduced by introducing small, closely spaced distortions into the reflecting surfaces, and practical arrays can achieve a concentration of 10 when the acceptance half angle is 4.25 deg or 50 when the acceptance half angle is + or - 1 deg.

Development of a process for high capacity arc heater production of silicon for solar arrays

Science.gov (United States)

Meyer, T. N.

1980-01-01

A high temperature silicon production process using existing electric arc heater technology is discussed. Silicon tetrachloride and a reductant, liquid sodium, were injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction occurred, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon were developed. The desired degree of separation was not achieved. The electrical, control and instrumentation, cooling water, gas, SiCl4, and sodium systems are discussed. The plasma reactor, silicon collection, effluent disposal, the gas burnoff stack, and decontamination and safety are also discussed. Procedure manuals, shakedown testing, data acquisition and analysis, product characterization, disassembly and decontamination, and component evaluation are reviewed.

Wavelength conversion of 80 Gb/s RZ-DPSK Pol-MUX signals in a silicon nanowire

DEFF Research Database (Denmark)

Vukovic, Dragana; Peucheret, Christophe; Oxenløwe, Leif Katsuo

2014-01-01

All-optical wavelength conversion of 80 Gb/s RZ-DPSK polarization multiplexed signals is demonstrated in a silicon nanowire using an angled-pump scheme. The quality of the converted signal is characterized through BER measurements for the first time.......All-optical wavelength conversion of 80 Gb/s RZ-DPSK polarization multiplexed signals is demonstrated in a silicon nanowire using an angled-pump scheme. The quality of the converted signal is characterized through BER measurements for the first time....

Heat-rejection design for large concentrating solar arrays

Science.gov (United States)

French, E. P.

1980-01-01

This paper considers the effect of heat rejection devices (radiators) on the performance and cost of large concentrating solar arrays for space application. Overall array characteristics are derived from the weight, cost, and performance of four major components; namely primary structure, optics/secondary structure, radiator, and solar panel. An ideal concentrator analysis is used to establish general cost and performance trends independent of specific array design. Both passive and heat-pipe radiation are evaluated, with an incremental cost-of-power approach used in the evaluation. Passive radiators are found to be more cost effective with silicon than with gallium arsenide (GaAs) arrays. Representative concentrating arrays have been evaluated for both near-term and advanced solar cell technology. Minimum cost of power is achieved at geometric concentration ratios in the range 2 to 6.

Orientation of quartz nanocrystallites in the silicon lattice

International Nuclear Information System (INIS)

Kalanov, M.U.; Ibragimova, E.M.; Khamraeva, R.N.; Rustamova, V.M.; Ummatov, Kh.D.

2006-01-01

Full text: Basing on the study of medium angle diffuse X-ray scattering from silicon single crystals, it was supposed to be due to rod like oxygen precipitates. It was shown by us later, that depending on the growth conditions, as-grown silicon single crystals contain quartz crystal inclusions at an amount of 0.3 / 0.5 wt. % . Since it has not been done before, the aim of this work was to study the shape and orientation of quartz inclusions relative to a chosen axis of the silicon crystal lattice. We studied p-Si single crystals of one crucible origin with the specific resistance ρ 0 ≅ 1/10 Ohm· cm with different cut surfaces parallel to the crystal planes (100), (110) and (111). All the samples were cut and polished in the bar form with the sizes of 20x12x1.5 mm 3 . The dislocation density was N D ≅ 10 1 /10 3 cm -2 , the concentrations of oxygen and boron were N O ≅ 2/ 4 x10 17 cm -3 and N B ≅ 3· 10 1 5 c m -3 . Structure was analyzed at the set-up DRON-3M ( λ Cu K∝ = 0.1542 nm) at the room temperature in the angle range of angles 2Θ = 10/70 deg. The diffraction spectrum of the sample cut in (111) includes 5 selective reflections and the only diffuse one at 2Θ≅ 20 deg (d/n≅ 0.3136 nm), having a large width 0.1032 rad, which is due to presence of amorphous SiO x precipitate in the surface layer of silicon single crystal. The dominative selective line with d/n≅ 0.3136 nm at 2Θ≅ 28.5 deg belongs to reflection from (111) planes of the silicon lattice and the second less intensive one comes from the same planes with Cu K β radiation. Another selective reflection of a medium intensity at 2Θ≅ 59 deg with d/n≅ 0.1568 nm is its second order (222) and forbidden by the weakening laws. The rest narrow but weak lines with d/n≅ 0.3345 nm at 2Θ≅ 26.6 deg and 0.2468 nm at≅36.6 deg correspond to the diffraction reflections (101) and (110) from the crystal quartz lattice SiO 2 . It means that they are caused by optimally oriented quartz

2-D Row-Column CMUT Arrays with an Open-Grid Support Structure

DEFF Research Database (Denmark)

Christiansen, Thomas Lehrmann; Dahl-Petersen, Christian; Jensen, Jørgen Arendt

2013-01-01

Fabrication and characterization of 64 + 64 2-D row-column addressed CMUT arrays with 250 μm element pitch and 4.4 MHz center frequency in air incorporating a new design approach is presented. The arrays are comprised of two wafer bonded, structured silicon-on-insulator wafers featuring an opengr...

In-beam conversion electron spectroscopy using the SACRED array

International Nuclear Information System (INIS)

Jones, P.M.; Cann, K.J.; Cocks, J.F.C.; Jones, G.D.; Julin, R.; Schulze, B.; Smith, J.F.; Wilson, A.N.

1997-01-01

Conversion electron studies of medium-heavy to heavy nuclear mass systems are important where the internal conversion process begins to dominate over gamma-ray emission. The use of a segmented detector array sensitive to conversion electrons has been used to study multiple conversion electron cascades from nuclear transitions. The application of the silicon array for conversion electron detection (SACRED) for in-beam measurements has successfully been implemented. (orig.). With 2 figs

A new detector array for charged particle spectroscopy

CERN Document Server

Cowin, R L; Chappell, S P G; Clarke, N M; Freer, M; Fulton, B R; Cunningham, R A; Curtis, N; Dillon, G; Lilley, J; Jones, C D; Lee, P; Rae, W D M

1999-01-01

A compact and highly segmented detector array consisting of 44 gas-silicon-caesium iodide, position sensitive, particle identification detector telescopes and up to 10 position-sensitive, silicon strip detectors has been constructed for the study of light-ion-heavy-ion reactions including cluster break-up in the energy range 5-15 MeV/nucleon. The detectors are housed in a purpose built vacuum chamber. The telescopes are placed in fixed positions, covering the forward hemisphere from 3 to 30 deg. in the laboratory with the target placed at 535 mm from the front of the telescopes or 6-52 deg. with the target placed at 215 mm. The strip detectors are placed in any of 30 fixed positions in the forward hemisphere. For 85 MeV sup 1 sup 2 C ions the telescope energy resolution (gas plus silicon) is 345 keV with an angular resolution of 0.03 deg. . Using the gas-silicon section ions with Z up to 21 can be identified. For ions that pass through the silicon isotopic identification is achieved using the silicon-CsI comb...

Wide angle light collection with ultralow reflection and super scattering by silicon micro-nanostructures for thin crystalline silicon solar cell applications

International Nuclear Information System (INIS)

Das, Sonali; Kundu, Avra; Saha, Hiranmay; Datta, Swapan K

2016-01-01

Conventional c-Si solar cells employ micron-sized pyramids for achieving reduced reflection (∼10%) and enhanced light trapping by multiple bounces (maximum 3) of the incident light. Alternatively, bio-mimetic, moth-eye sub-wavelength nanostructures offer broadband antireflection properties (∼3%) suitable for solar cell applications in the optical regime. However, such structures do not provide any advantage in the charge carrier extraction process as radial junctions cannot be formed in such sub-wavelength dimensions and they have high surface area causing increased charged carrier recombination. The choice of the geometry for achieving optimum photon–electron harvesting for solar applications is therefore very critical. Cross-fertilization of the conventional solar cell light-trapping techniques and the sub-wavelength nanostructures results in unique micro-nanostructures (structures having sub-wavelength dimensions as well as dimensions of the order of few microns) which provide advanced light management capabilities along with the ability of realizing radial junctions. It is seen that an ultralow reflection along with wide angle light collection is obtained which enables such structures to overcome the morning, evening and winter light losses in solar cells. Further, super-scattering in the structures offer enhanced light trapping not only in the structure itself but also in the substrate housing the structure. Ray and wave optics have been used to understand the optical benefits of the structures. It is seen that the aspect ratio of the structures plays the most significant role for achieving such light management capabilities, and efficiencies as high as 12% can be attained. Experiments have been carried out to fabricate a unique micro-nanomaze-like structure instead of a periodic array of micro-nanostructures with the help of nanosphere lithography and the MacEtch technique. It is seen that randomized micro-nanomaze geometry offers very good

Electrically driven light emission from an array of Si nanoclusters

International Nuclear Information System (INIS)

Mazzitello, K I; Martin, H O; Aldao, C M; Roman, H E

2004-01-01

Charge transport and light emission properties of an array of silicon nanoclusters (NCs), sandwiched between a p-type and an n-type doped silicon crystal, are studied theoretically by assuming that electrons and holes enter from the opposite sides of the array in response to an applied electric field. The size of the NCs considered ranges from 16 nm down to 3.6 nm and their spatial distribution is optimized so that light emission, resulting from radiative recombinations, is peaked in the visible red around 1.8 eV. The light emission efficiency is limited by the carrier hopping times and is found to be in the range 2-0.5%, for fields ranging from 100 kV cm -1 to 500 kV cm -1 , respectively

Dense arrays of millimeter-sized glass lenses fabricated at wafer-level.

Science.gov (United States)

Albero, Jorge; Perrin, Stéphane; Bargiel, Sylwester; Passilly, Nicolas; Baranski, Maciej; Gauthier-Manuel, Ludovic; Bernard, Florent; Lullin, Justine; Froehly, Luc; Krauter, Johann; Osten, Wolfgang; Gorecki, Christophe

2015-05-04

This paper presents the study of a fabrication technique of lenses arrays based on the reflow of glass inside cylindrical silicon cavities. Lenses whose sizes are out of the microfabrication standards are considered. In particular, the case of high fill factor arrays is discussed in detail since the proximity between lenses generates undesired effects. These effects, not experienced when lenses are sufficiently separated so that they can be considered as single items, are corrected by properly designing the silicon cavities. Complete topographic as well as optical characterizations are reported. The compatibility of materials with Micro-Opto-Electromechanical Systems (MOEMS) integration processes makes this technology attractive for the miniaturization of inspection systems, especially those devoted to imaging.

Inclined-wall regular micro-pillar-arrayed surfaces covered entirely with an alumina nanowire forest and their improved superhydrophobicity

International Nuclear Information System (INIS)

Kim, Dae-Ho; Lee, Dongyun; Cho, Chae-Ryong; Kim, Soo-Hyung; Lee, Deug-Woo; Kim, Jong-Man; Kim, Yongsung; Kang, Jae-Wook; Hong, Suck Won

2011-01-01

This paper reports a multiple-scale hierarchically structured superhydrophobic surface that is composed of inclined-wall regular micro-pillar arrays covered entirely with an alumina nanowire forest (ANF) to improve the surface wettability. The multiple-scaled structures were fabricated stably using a simple batch process based on an anisotropic chemical silicon etching process and a subsequent time-controlled anodic aluminum oxide technique. The surface wetting properties of the mono-roughened surfaces with inclined-wall micro-pillar arrays, which are normally in the Wenzel wetting regime, could be transitioned perfectly to the slippery Cassie mode and enhanced greatly in the Wenzel regime in cases of a high- and low-density of the micro-pillars, respectively, by easily amplifying the intrinsic contact angle through the entire coverage of the ANF on the micro-roughened surfaces. The wettability of the proposed multiple-scaled surfaces could also be predicted using analytic surface models and the experimental results agreed greatly with the wetting trends estimated theoretically due to the geometrical regularity of the base micro-structures

Study of Bulk and Surface States in Porous Silicon

National Research Council Canada - National Science Library

Weisz, Zvi

2000-01-01

In this final report we summarize our findings on the study of Porous Silicon (PSi). We synthesized a variety of PSi films ranging from mesostructures to arrays of nanoparticles of the order of 2nm...

Angular Distributions of Sputtered Atoms from Semiconductor Targets at Grazing Ion Beam Incidence Angles

International Nuclear Information System (INIS)

Sekowski, M.; Burenkov, A.; Martinez-Limia, A.; Hernandez-Mangas, J.; Ryssel, H.

2008-01-01

Angular distributions of ion sputtered germanium and silicon atoms are investigated within this work. Experiments are performed for the case of grazing ion incidence angles, where the resulting angular distributions are asymmetrical with respect to the polar angle of the sputtered atoms. The performed experiments are compared to Monte-Carlo simulations from different programs. We show here an improved model for the angular distribution, which has an additional dependence of the ion incidence angle.

Experimental demonstration of conformal phased array antenna via transformation optics.

Science.gov (United States)

Lei, Juan; Yang, Juxing; Chen, Xi; Zhang, Zhiya; Fu, Guang; Hao, Yang

2018-02-28

Transformation Optics has been proven a versatile technique for designing novel electromagnetic devices and it has much wider applicability in many subject areas related to general wave equations. Among them, quasi-conformal transformation optics (QCTO) can be applied to minimize anisotropy of transformed media and has opened up the possibility to the design of broadband antennas with arbitrary geometries. In this work, a wide-angle scanning conformal phased array based on all-dielectric QCTO lens is designed and experimentally demonstrated. Excited by the same current distribution as such in a conventional planar array, the conformal system in presence of QCTO lens can preserve the same radiation characteristics of a planar array with wide-angle beam-scanning and low side lobe level (SLL). Laplace's equation subject to Dirichlet-Neumann boundary conditions is adopted to construct the mapping between the virtual and physical spaces. The isotropic lens with graded refractive index is realized by all-dielectric holey structure after an effective parameter approximation. The measurements of the fabricated system agree well with the simulated results, which demonstrate its excellent wide-angle beam scanning performance. Such demonstration paves the way to a robust but efficient array synthesis, as well as multi-beam and beam forming realization of conformal arrays via transformation optics.

Covalent biofunctionalization of silicon nitride surfaces

NARCIS (Netherlands)

Arafat, A.; Giesbers, M.; Rosso, M.; Sudhölter, E.J.R.; Schroën, C.G.P.H.; White, R.G.; Li Yang,; Linford, M.R.; Zuilhof, H.

2007-01-01

Covalently attached organic monolayers on etched silicon nitride (SixN4; x 3) surfaces were prepared by reaction of SixN4-coated wafers with neat or solutions of 1-alkenes and 1-alkynes in refluxing mesitylene. The surface modification was monitored by measurement of the static water contact angle,

Screen printed thick film based pMUT arrays

DEFF Research Database (Denmark)

Hedegaard, Tobias; Pedersen, T; Thomsen, Erik Vilain

2008-01-01

This article reports on the fabrication and characterization of lambda-pitched piezoelectric micromachined ultrasound transducer (pMUT) arrays fabricated using a unique process combining conventional silicon technology and low cost screen printing of thick film PZT. The pMUTs are designed as 8...

Reactively loaded arrays based on overlapping sub-arrays with flat-top radiation pattern

NARCIS (Netherlands)

Maximidis, R. T.; Smolders, A. B.; Toso, G.; Caratelli, D.

2017-01-01

The design of reactively-loaded antenna arrays featuring a pulse-shaped radiation pattern for limited scan-angle applications is presented. The use of the reactive loading allows reducing the complexity of the feeding structure, eliminating the need for complex overlapping beam-forming networks and

Silicon nanowires enhanced proliferation and neuronal differentiation of neural stem cell with vertically surface microenvironment.

Science.gov (United States)

Yan, Qiuting; Fang, Lipao; Wei, Jiyu; Xiao, Guipeng; Lv, Meihong; Ma, Quanhong; Liu, Chunfeng; Wang, Wang

2017-09-01

Owing to its biocompatibility, noncytotoxicity, biodegradability and three-dimensional structure, vertically silicon nanowires (SiNWs) arrays are a promising scaffold material for tissue engineering, regenerative medicine and relevant medical applications. Recently, its osteogenic differentiation effects, reorganization of cytoskeleton and regulation of the fate on stem cells have been demonstrated. However, it still remains unknown whether SiNWs arrays could affect the proliferation and neuronal differentiation of neural stem cells (NSCs) or not. In the present study, we have employed vertically aligned SiNWs arrays as culture systems for NSCs and proved that the scaffold material could promote the proliferation and neuronal differentiation of NSCs while maintaining excellent cell viability and stemness. Immunofluorescence imaging analysis, Western blot and RT-PCR results reveal that NSCs proliferation and neuronal differentiation efficiency on SiNWs arrays are significant greater than that on silicon wafers. These results implicate SiNWs arrays could offer a powerful platform for NSCs research and NSCs-based therapy in the field of neural tissue engineering.

Process Research On Polycrystalline Silicon Material (PROPSM). [flat plate solar array project

Science.gov (United States)

Culik, J. S.

1983-01-01

The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

Evaluation of phased array UT conditions using ultrasonic visualization technique

International Nuclear Information System (INIS)

Furukawa, Takashi; Komura, Ichirou

2008-01-01

Phased array provides many advantages over conventional ultrasonic testing method, but phased array has also limitations. This paper describes typical results of the experimental sound field analysis generated from the array probe. A photo-elastic ultrasonic visualization technique was applied in this study. The sound fields of shear wave generated from the array probe was equivalent to that from the fixed angle probe. (author)

Improved piercing of microneedle arrays in dermatomed human skin by an impact insertion method

NARCIS (Netherlands)

Verbaan, F.J.; Bal, S.M.; Berg, van den D.J.; Dijksman, J.A.; Hecke, van M.; Verpoorten, H.; Berg, van den A.; Luttge, R.; Bouwstra, J.A.

2008-01-01

An electrical applicator was designed, which can pierce short microneedles into the skin with a predefined velocity. Three different shapes of microneedles were used, namely 300 µm assembled hollow metal microneedle arrays, 300 µm solid metal microneedle arrays and 245 µm hollow silicon microneedle

Electromagnetic Power Harvester Using Wide-Angle and Polarization-Insensitive Metasurfaces

Directory of Open Access Journals (Sweden)

Xuanming Zhang

2018-03-01

Full Text Available A new wide-angle and polarization-insensitive metasurface (MS instead of traditional antenna is built as the primary ambient energy harvester in this paper. The MS is a two-dimensional energy harvesting array that is composed of subwavelength electrical small ring resonator that is working at 2.5 GHz (LTE/WiFi. In the case of different polarization and incidence angles, we demonstrate the metasurface can achieve high harvesting efficiency of 90%. The fabricated prototype of 9 × 9 MS energy harvesting array is measured, and the experimental results validate that the proposed MS has a good performance more than 80% of energy harvesting efficiency for arbitrary polarization and wide-angle incident waves. The good agreement of the simulation with the experiment results verifies the practicability and effectiveness of the proposed MS structure, which will provide a new source of supply in wireless sensor networks (WSN.

Tailoring the optical constants in single-crystal silicon with embedded silver nanostructures for advanced silicon photonics applications

International Nuclear Information System (INIS)

Akhter, Perveen; Huang, Mengbing; Spratt, William; Kadakia, Nirag; Amir, Faisal

2015-01-01

Plasmonic effects associated with metal nanostructures are expected to hold the key to tailoring light emission/propagation and harvesting solar energy in materials including single crystal silicon which remains the backbone in the microelectronics and photovoltaics industries but unfortunately, lacks many functionalities needed for construction of advanced photonic and optoelectronics devices. Currently, silicon plasmonic structures are practically possible only in the configuration with metal nanoparticles or thin film arrays on a silicon surface. This does not enable one to exploit the full potential of plasmonics for optical engineering in silicon, because the plasmonic effects are dominant over a length of ∼50 nm, and the active device region typically lies below the surface much beyond this range. Here, we report on a novel method for the formation of silver nanoparticles embedded within a silicon crystal through metal gettering from a silver thin film deposited at the surface to nanocavities within the Si created by hydrogen ion implantation. The refractive index of the Ag-nanostructured layer is found to be 3–10% lower or higher than that of silicon for wavelengths below or beyond ∼815–900 nm, respectively. Around this wavelength range, the optical extinction values increase by a factor of 10–100 as opposed to the pure silicon case. Increasing the amount of gettered silver leads to an increased extinction as well as a redshift in wavelength position for the resonance. This resonance is attributed to the surface plasmon excitation of the resultant silver nanoparticles in silicon. Additionally, we show that the profiles for optical constants in silicon can be tailored by varying the position and number of nanocavity layers. Such silicon crystals with embedded metal nanostructures would offer novel functional base structures for applications in silicon photonics, optoelectronics, photovoltaics, and plasmonics

Enhancing the Efficiency of Silicon-Based Solar Cells by the Piezo-Phototronic Effect.

Science.gov (United States)

Zhu, Laipan; Wang, Longfei; Pan, Caofeng; Chen, Libo; Xue, Fei; Chen, Baodong; Yang, Leijing; Su, Li; Wang, Zhong Lin

2017-02-28

Although there are numerous approaches for fabricating solar cells, the silicon-based photovoltaics are still the most widely used in industry and around the world. A small increase in the efficiency of silicon-based solar cells has a huge economic impact and practical importance. We fabricate a silicon-based nanoheterostructure (p + -Si/p-Si/n + -Si (and n-Si)/n-ZnO nanowire (NW) array) photovoltaic device and demonstrate the enhanced device performance through significantly enhanced light absorption by NW array and effective charge carrier separation by the piezo-phototronic effect. The strain-induced piezoelectric polarization charges created at n-doped Si-ZnO interfaces can effectively modulate the corresponding band structure and electron gas trapped in the n + -Si/n-ZnO NW nanoheterostructure and thus enhance the transport process of local charge carriers. The efficiency of the solar cell was improved from 8.97% to 9.51% by simply applying a static compress strain. This study indicates that the piezo-phototronic effect can enhance the performance of a large-scale silicon-based solar cell, with great potential for industrial applications.

Underwater sound transmission through arrays of disk cavities in a soft elastic medium.

Science.gov (United States)

Calvo, David C; Thangawng, Abel L; Layman, Christopher N; Casalini, Riccardo; Othman, Shadi F

2015-10-01

Scattering from a cavity in a soft elastic medium, such as silicone rubber, resembles scattering from an underwater bubble in that low-frequency monopole resonance is obtainable in both cases. Arrays of cavities can therefore be used to reduce underwater sound transmission using thin layers and low void fractions. This article examines the role of cavity shape by microfabricating arrays of disk-shaped air cavities into single and multiple layers of polydimethylsiloxane. Comparison is made with the case of equivalent volume cylinders which approximate spheres. Measurements of ultrasonic underwater sound transmission are compared with finite element modeling predictions. The disks provide a deeper transmission minimum at a lower frequency owing to the drum-type breathing resonance. The resonance of a single disk cavity in an unbounded medium is also calculated and compared with a derived estimate of the natural frequency of the drum mode. Variation of transmission is determined as a function of disk tilt angle, lattice constant, and layer thickness. A modeled transmission loss of 18 dB can be obtained at a wavelength about 20 times the three-layer thickness, and thinner results (wavelength/thickness ∼ 240) are possible for the same loss with a single layer depending on allowable hydrostatic pressure.

Silicon nanowire transistors

CERN Document Server

Bindal, Ahmet

2016-01-01

This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

Infrared detectors and arrays; Proceedings of the Meeting, Orlando, FL, Apr. 6, 7, 1988

International Nuclear Information System (INIS)

Dereniak, E.L.

1988-01-01

The papers contained in this volume provide an overview of recent advances in theoretical and experimental research related to IR detector materials and arrays. The major subject areas covered include IR Schottky barrier silicide arrays, HdCdTe developments, SPRITE technology, superlattice or bandgap-engineered devices, extrinsic silicon technology, indium antimonide technology, and pyroelectric arrays. Papers are presented on time division multiplexed time delay integration, spatial noise in staring IR focal plane arrays, pyroelectrics in a harsh environment, and testing of focal plane arrays

Improved piercing of microneedle arrays in dermatomed human skin by an impact insertion method

NARCIS (Netherlands)

Verbaan, F.J.; Bal, S.M.; van den Berg, D.J.; Dijksman, J.A.; van Hecke, M.; Verpoorten, H.; van den Berg, Albert; Lüttge, Regina; Bouwstra, J.A.

2008-01-01

An electrical applicator was designed, which can pierce short microneedles into the skin with a predefined velocity. Three different shapes of microneedles were used, namely 300 mu m assembled hollow metal microneedle arrays, 300 mu m solid metal microneedle arrays and 245 mu m hollow silicon

3D, Flash, Induced Current Readout for Silicon Sensors

Energy Technology Data Exchange (ETDEWEB)

Parker, Sherwood I. [Univ. of Hawaii, Honolulu, HI (United States)

2014-06-07

A new method for silicon microstrip and pixel detector readout using (1) 65 nm-technology current amplifers which can, for the first time with silicon microstrop and pixel detectors, have response times far shorter than the charge collection time (2) 3D trench electrodes large enough to subtend a reasonable solid angle at most track locations and so have adequate sensitivity over a substantial volume of pixel, (3) induced signals in addition to, or in place of, collected charge

High-aspect-ratio, silicon oxide-enclosed pillar structures in microfluidic liquid chromatography.

Science.gov (United States)

Taylor, Lisa C; Lavrik, Nickolay V; Sepaniak, Michael J

2010-11-15

The present paper discusses the ability to separate chemical species using high-aspect-ratio, silicon oxide-enclosed pillar arrays. These miniaturized chromatographic systems require smaller sample volumes, experience less flow resistance, and generate superior separation efficiency over traditional packed bed liquid chromatographic columns, improvements controlled by the increased order and decreased pore size of the systems. In our distinctive fabrication sequence, plasma-enhanced chemical vapor deposition (PECVD) of silicon oxide is used to alter the surface and structural properties of the pillars for facile surface modification while improving the pillar mechanical stability and increasing surface area. The separation behavior of model compounds within our pillar systems indicated an unexpected hydrophobic-like separation mechanism. The effects of organic modifier, ionic concentration, and pressure-driven flow rate were studied. A decrease in the organic content of the mobile phase increased peak resolution while detrimentally effecting peak shape. A resolution of 4.7 (RSD = 3.7%) was obtained for nearly perfect Gaussian shaped peaks, exhibiting plate heights as low as 1.1 and 1.8 μm for fluorescein and sulforhodamine B, respectively. Contact angle measurements and DART mass spectrometry analysis indicate that our employed elastomeric soft bonding technique modifies pillar properties, creating a fortuitous stationary phase. This discovery provides evidence supporting the ability to easily functionalize PECVD oxide surfaces by gas-phase reactions.

Structural anomalies induced by the metal deposition methods in 2D silver nanoparticle arrays prepared by nanosphere lithography

Energy Technology Data Exchange (ETDEWEB)

Huang, Shengli, E-mail: huangsl@xmu.edu.cn [Fujian Provincial Key Lab of Semiconductors and Applications, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Yang, Qianqian [Fujian Provincial Key Lab of Semiconductors and Applications, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China); State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Zhang, Chunjing; Kong, Lingqi; Li, Shuping; Kang, Junyong [Fujian Provincial Key Lab of Semiconductors and Applications, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)

2013-06-01

Silver nanoparticle arrays with 2-dimensional hexagonal arrangement were fabricated on the silicon substrates by nanosphere lithography. The silver film was deposited either by thermal evaporation or by magnetron sputtering under different conditions. The nanostructures of the achieved sphere template and the array units were characterized by scanning electron microscopy and atomic force microscopy, and were found to be anomalous under different deposition parameters. Comparative study indicated that the formation of the various 2-dimensional silver nanoparticle array structures was dominated by the thermal energy (temperature), kinetic energy and deposition direction of the deposited metal atoms as well as the size and nanocurvature of the colloidal particles and the metal clusters. - Highlights: • Silver nanoparticle arrays with different nanostructures on silicon substrates. • Various deposition parameters in arrays formation systematically examined. • Possible mechanisms and optimization of nanostructures formation addressed.

Vertically etched silicon nano-rods as a sensitive electron detector

International Nuclear Information System (INIS)

Hajmirzaheydarali, M; Akbari, M; Soleimani-Amiri, S; Sadeghipari, M; Shahsafi, A; Akhavan Farahani, A; Mohajerzadeh, S

2015-01-01

We have used vertically etched silicon nano-rods to realize electron detectors suitable for scanning electron microscopes. The results of deep etching of silicon nano-structures are presented to achieve highly ordered arrays of nano-rods. The response of the electron detector to energy of the primary electron beam and the effects of various sizes and materials has been investigated, indicating its high sensitivity to secondary and back-scattered electrons. The miniaturized structure of this electron detector allows it to be placed in the vicinity of the specimen to improve the resolution and contrast. This detector collects electrons and converts the electron current to voltage directly by means of n-doped silicon nano-rods on a p-type silicon substrate. Silicon nano-rods enhance the surface-to-volume ratio of the detector as well as improving the yield of electron detection. The use of nano-structures and silicon nanowires as an electron detector has led to higher sensitivities than with micro-structures. (paper)

Diode temperature sensor array for measuring and controlling micro scale surface temperature

International Nuclear Information System (INIS)

Han, Il Young; Kim, Sung Jin

2004-01-01

The needs of micro scale thermal detecting technique are increasing in biology and chemical industry. For example, thermal finger print, Micro PCR(Polymer Chain Reaction), TAS and so on. To satisfy these needs, we developed a DTSA(Diode Temperature Sensor Array) for detecting and controlling the temperature on small surface. The DTSA is fabricated by using VLSI technique. It consists of 32 array of diodes(1,024 diodes) for temperature detection and 8 heaters for temperature control on a 8mm surface area. The working principle of temperature detection is that the forward voltage drop across a silicon diode is approximately proportional to the inverse of the absolute temperature of diode. And eight heaters (1K) made of poly-silicon are added onto a silicon wafer and controlled individually to maintain a uniform temperature distribution across the DTSA. Flip chip packaging used for easy connection of the DTSA. The circuitry for scanning and controlling DTSA are also developed

Microchannel-connected SU-8 honeycombs by single-step projection photolithography for positioning cells on silicon oxide nanopillar arrays

International Nuclear Information System (INIS)

Larramendy, Florian; Paul, Oliver; Blatche, Marie Charline; Mazenq, Laurent; Laborde, Adrian; Temple-Boyer, Pierre

2015-01-01

We report on the fabrication, functionalization and testing of SU-8 microstructures for cell culture and positioning over large areas. The microstructure consists of a honeycomb arrangement of cell containers interconnected by microchannels and centered on nanopillar arrays designed for promoting cell positioning. The containers have been dimensioned to trap single cells and, with a height of 50 µm, prevent cells from escaping. The structures are fabricated using a single ultraviolet photolithography exposure with focus depth in the lower part of the SU-8 resist. With optimized process parameters, microchannels of various aspect ratios are thus produced. The cell containers and microchannels serve for the organization of axonal growth between neurons. The roughly 2 µm-high and 500 nm-wide nanopillars are made of silicon oxide structured by deep reactive ion etching. In future work, beyond their cell positioning purpose, the nanopillars could be functionalized as sensors. The proof of concept of the novel microstructure for organized cell culture is given by the successful growth of interconnected PC12 cells. Promoted by the honeycomb geometry, a dense network of interconnections between the cells has formed and the intended intimate contact of cells with the nanopillar arrays was observed by scanning electron microscopy. This proves the potential of these new devices as tools for the controlled cell growth in an interconnected container system with well-defined 3D geometry. (paper)

Waferscale Electrostatic Quadrupole Array for Multiple Ion Beam Manipulation

OpenAIRE

Vinayakumar, K. B.; Persaud, A.; Seidl, P. A.; Ji, Q.; Waldron, W. L.; Schenkel, T.; Ardanuc, S.; Lal, A.

2018-01-01

We report on the first through-wafer silicon-based Electrostatic Quadrupole Array (ESQA) to focus high energy ion beams. This device is a key enabler for a wafer based accelerator architecture that lends itself to orders-of-magnitude reduction in cost, volume and weight of charged particle accelerators. ESQs are a key building block in developing compact Multiple Electrostatic Quadrupole Array Linear Accelerator (MEQALAC) [1]. In a MEQALAC electrostatic forces are used to focus ions, and elec...

3D silicone rubber interfaces for individually tailored implants.

Science.gov (United States)

Stieghorst, Jan; Bondarenkova, Alexandra; Burblies, Niklas; Behrens, Peter; Doll, Theodor

2015-01-01

For the fabrication of customized silicone rubber based implants, e.g. cochlear implants or electrocortical grid arrays, it is required to develop high speed curing systems, which vulcanize the silicone rubber before it runs due to a heating related viscosity drop. Therefore, we present an infrared radiation based cross-linking approach for the 3D-printing of silicone rubber bulk and carbon nanotube based silicone rubber electrode materials. Composite materials were cured in less than 120 s and material interfaces were evaluated with scanning electron microscopy. Furthermore, curing related changes in the mechanical and cell-biological behaviour were investigated with tensile and WST-1 cell biocompatibility tests. The infrared absorption properties of the silicone rubber materials were analysed with fourier transform infrared spectroscopy in transmission and attenuated total reflection mode. The heat flux was calculated by using the FTIR data, emissivity data from the infrared source manufacturer and the geometrical view factor of the system.

Angle-resolved environmental X-ray photoelectron spectroscopy: A new laboratory setup for photoemission studies at pressures up to 0.4 Torr

International Nuclear Information System (INIS)

Mangolini, F.; Wabiszewski, G. E.; Egberts, P.; Åhlund, J.; Backlund, K.; Karlsson, P. G.; Adiga, V. P.; Streller, F.; Wannberg, B.; Carpick, R. W.

2012-01-01

The paper presents the development and demonstrates the capabilities of a new laboratory-based environmental X-ray photoelectron spectroscopy system incorporating an electrostatic lens and able to acquire spectra up to 0.4 Torr. The incorporation of a two-dimensional detector provides imaging capabilities and allows the acquisition of angle-resolved data in parallel mode over an angular range of 14° without tilting the sample. The sensitivity and energy resolution of the spectrometer have been investigated by analyzing a standard Ag foil both under high vacuum (10 −8 Torr) conditions and at elevated pressures of N 2 (0.4 Torr). The possibility of acquiring angle-resolved data at different pressures has been demonstrated by analyzing a silicon/silicon dioxide (Si/SiO 2 ) sample. The collected angle-resolved spectra could be effectively used for the determination of the thickness of the native silicon oxide layer.

Large-scale membrane transfer process: its application to single-crystal-silicon continuous membrane deformable mirror

International Nuclear Information System (INIS)

Wu, Tong; Sasaki, Takashi; Hane, Kazuhiro; Akiyama, Masayuki

2013-01-01

This paper describes a large-scale membrane transfer process developed for the construction of large-scale membrane devices via the transfer of continuous single-crystal-silicon membranes from one substrate to another. This technique is applied for fabricating a large stroke deformable mirror. A bimorph spring array is used to generate a large air gap between the mirror membrane and the electrode. A 1.9 mm × 1.9 mm × 2 µm single-crystal-silicon membrane is successfully transferred to the electrode substrate by Au–Si eutectic bonding and the subsequent all-dry release process. This process provides an effective approach for transferring a free-standing large continuous single-crystal-silicon to a flexible suspension spring array with a large air gap. (paper)

Nanopillar arrays on semiconductor membranes as electron emission amplifiers.

Science.gov (United States)

Qin, Hua; Kim, Hyun-Seok; Blick, Robert H

2008-03-05

A new transmission-type electron multiplier was fabricated from silicon-on-insulator (SOI) material by integrating an array of one-dimensional (1D) silicon nanopillars onto a two-dimensional (2D) silicon membrane. Primary electrons are injected into the nanopillar-membrane (NPM) system from the flat surface of the membrane, while electron emission from the nanopillars is probed by an anode. The secondary electron yield (SEY) from the nanopillars in the current device is found to be about 1.8 times that of the plain silicon membrane. This gain in electron number is slightly enhanced by the electric field applied from the anode. Further optimization of the dimensions of the NPM and an application of field emission promise an even higher gain for detector applications and allow for probing of electronic/mechanical excitations in an NPM system stimulated by incident particles or radiation.

The CMS silicon tracker

International Nuclear Information System (INIS)

D'Alessandro, R.; Biggeri, U.; Bruzzi, M.; Catacchini, E.; Civinini, C.; Focardi, E.; Lenzi, M.; Loreti, M.; Meschini, M.; Parrini, G.; Pieri, M.; Albergo, S.; Boemi, D.; Potenza, R.; Tricomi, A.; Angarano, M.; Creanza, D.; Palma, M. de; Fiore, L.; Maggi, G.; My, S.; Raso, G.; Selvaggi, G.; Tempesta, P.; Azzi, P.; Bacchetta, N.; Bisello, D.; Candelori, A.; Castro, A.; Da Rold, M.; Giraldo, A.; Martignon, G.; Paccagnella, A.; Stavitsky, I.; Babucci, E.; Bartalini, P.; Bilei, G.M.; Checcucci, B.; Ciampolini, P.; Lariccia, P.; Mantovani, G.; Passeri, D.; Santocchia, A.; Servoli, L.; Wang, Y.; Bagliesi, G.; Basti, A.; Bosi, F.; Borello, L.; Bozzi, C.; Castaldi, R.; Dell'Orso, R.; Giassi, A.; Messineo, A.; Palla, F.; Raffaelli, F.; Sguazzoni, G.; Starodumov, A.; Tonelli, G.; Vannini, C.; Verdini, P.G.; Xie, Z.; Breuker, H.; Caner, A.; Elliott-Peisert, A.; Feld, L.; Glessing, B.; Hammerstrom, R.; Huhtinen, M.; Mannelli, M.; Marchioro, A.; Schmitt, B.; Stefanini, G.; Connotte, J.; Gu, W.H.; Luebelsmeyer, K.; Pandoulas, D.; Siedling, R.; Wittmer, B.; Della Marina, R.; Freudenreich, K.; Lustermann, W.; Viertel, G.; Eklund, C.; Karimaeki, V.; Skog, K.; French, M.; Hall, G.; Mc Evoy, B.; Raymond, M.; Hrubec, J.; Krammer, M.; Piperov, S.; Tuuva, T.; Watts, S.; Silvestris, L.

1998-01-01

The new silicon tracker layout (V4) is presented. The system aspects of the construction are discussed together with the expected tracking performance. Because of the high radiation environment in which the detectors will operate, particular care has been devoted to the study of the characteristics of heavily irradiated detectors. This includes studies on performance (charge collection, cluster size, resolution, efficiency) as a function of the bias voltage, integrated fluence, incidence angle and temperature. (author)

Stable configurations of graphene on silicon

Energy Technology Data Exchange (ETDEWEB)

Javvaji, Brahmanandam; Shenoy, Bhamy Maithry [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Mahapatra, D. Roy, E-mail: droymahapatra@aero.iisc.ernet.in [Department of Aerospace Engineering, Indian Institute of Science, Bangalore 560012 (India); Ravikumar, Abhilash [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India); Hegde, G.M. [Center for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012 (India); Rizwan, M.R. [Department of Metallurgical and Materials Engineering, National Institute of Technology Karnataka, Surathkal 575025 (India)

2017-08-31

Highlights: • Simulations of epitaxial growth process for silicon–graphene system is performed. • Identified the most favourable orientation of graphene sheet on silicon substrate. • Atomic local strain due to the silicon–carbon bond formation is analyzed. - Abstract: Integration of graphene on silicon-based nanostructures is crucial in advancing graphene based nanoelectronic device technologies. The present paper provides a new insight on the combined effect of graphene structure and silicon (001) substrate on their two-dimensional anisotropic interface. Molecular dynamics simulations involving the sub-nanoscale interface reveal a most favourable set of temperature independent orientations of the monolayer graphene sheet with an angle of ∽15° between its armchair direction and [010] axis of the silicon substrate. While computing the favorable stable orientations, both the translation and the rotational vibrations of graphene are included. The possible interactions between the graphene atoms and the silicon atoms are identified from their coordination. Graphene sheet shows maximum bonding density with bond length 0.195 nm and minimum bond energy when interfaced with silicon substrate at 15° orientation. Local deformation analysis reveals probability distribution with maximum strain levels of 0.134, 0.047 and 0.029 for 900 K, 300 K and 100 K, respectively in silicon surface for 15° oriented graphene whereas the maximum probable strain in graphene is about 0.041 irrespective of temperature. Silicon–silicon dimer formation is changed due to silicon–carbon bonding. These results may help further in band structure engineering of silicon–graphene lattice.

Nanostructured silicon anodes for lithium ion rechargeable batteries.

Science.gov (United States)

Teki, Ranganath; Datta, Moni K; Krishnan, Rahul; Parker, Thomas C; Lu, Toh-Ming; Kumta, Prashant N; Koratkar, Nikhil

2009-10-01

Rechargeable lithium ion batteries are integral to today's information-rich, mobile society. Currently they are one of the most popular types of battery used in portable electronics because of their high energy density and flexible design. Despite their increasing use at the present time, there is great continued commercial interest in developing new and improved electrode materials for lithium ion batteries that would lead to dramatically higher energy capacity and longer cycle life. Silicon is one of the most promising anode materials because it has the highest known theoretical charge capacity and is the second most abundant element on earth. However, silicon anodes have limited applications because of the huge volume change associated with the insertion and extraction of lithium. This causes cracking and pulverization of the anode, which leads to a loss of electrical contact and eventual fading of capacity. Nanostructured silicon anodes, as compared to the previously tested silicon film anodes, can help overcome the above issues. As arrays of silicon nanowires or nanorods, which help accommodate the volume changes, or as nanoscale compliant layers, which increase the stress resilience of silicon films, nanoengineered silicon anodes show potential to enable a new generation of lithium ion batteries with significantly higher reversible charge capacity and longer cycle life.

Origami-inspired metamaterial absorbers for improving the larger-incident angle absorption

International Nuclear Information System (INIS)

Shen, Yang; Pang, Yongqiang; Wang, Jiafu; Ma, Hua; Pei, Zhibin; Qu, Shaobo

2015-01-01

When a folded resistive patch array stands up on a metallic plane, it can exhibit more outstanding absorption performance. Our theoretical investigations and simulations demonstrated that the folded resistive patch arrays can enhance the absorption bandwidth progressively with the increase of the incident angle for the oblique transverse magnetic incidence, which is contrary to the conventional resistive frequency selective surface absorber. On illumination, we achieved a 3D structure metamaterial absorber with the folded resistive patches. The proposed absorber is obtained from the inspiration of the origami, and it has broadband and lager-incident angle absorption. Both the simulations and the measurements indicate that the proposed absorber achieves the larger-incident angle absorption until 75° in the frequency band of 3.6–11.4 GHz. In addition, the absorber is extremely lightweight. The areal density of the fabricated sample is about 0.023 g cm −2 . Due to the broadband and lager-incident angle absorption, it is expected that the absorbers may find potential applications such as stealth technologies and electromagnetic interference. (paper)

Sensorless PV Array Diagnostic Method for Residential PV Systems

DEFF Research Database (Denmark)

Sera, Dezso; Spataru, Sergiu; Mathe, Laszlo

2011-01-01

This work proposes a temperature and irradiance sensorless diagnostic method suitable for small residential PV installations, focusing on detection of partial shadows. The method works by detection of failures in crystalline silicone PV arrays by concomitant monitoring of some of their key...

Texture orientation of glancing angle deposited copper nanowire arrays

International Nuclear Information System (INIS)

Alouach, H.; Mankey, G.J.

2004-01-01

Self-assembled copper nanowires were deposited on native oxide Si(100) substrates using glancing angle deposition with and without substrate rotation. Wire morphology, texture and crystallographic orientation are strongly dependent on the deposition parameters. A method for determining the preferred crystal orientation is described. This orientation is found to be different from what is expected from the geometric orientation of the wires. For wires deposited without substrate rotation, the face-centered-cubic (fcc)(111) crystal orientation, which corresponds to the close-packed, low surface energy (111) plane of copper, lies between the long axis of the wire and that normal to the substrate. X-ray diffraction data show that the wires exhibit bundling behavior perpendicular to the plane of incidence. For samples deposited with azimuthal rotation of the substrate, the fcc(111) directions in the wires are evenly distributed in a cone around the long axis of the wires, which point normal to the substrate. When the substrate is rotated during deposition at an angle of 75 deg., the wires exhibit a strong fcc(220) texture. These observations show that wires deposited with substrate rotation are highly textured and have random orientations in the plane of the substrate

Strain fields around dislocation arrays in a Σ9 silicon bicrystal measured by scanning transmission electron microscopy

Science.gov (United States)

Couillard, Martin; Radtke, Guillaume; Botton, Gianluigi A.

2013-04-01

Strain fields around grain boundary dislocations are measured by applying geometric phase analysis on atomic resolution images obtained from multiple fast acquisitions in scanning transmission electron microscopy. Maps of lattice distortions in silicon introduced by an array of pure edge dislocations located at a Σ9(122) grain boundary are compared with the predictions from isotropic elastic theory, and the atomic structure of dislocation cores is deduced from images displaying all the atomic columns. For strain measurements, reducing the acquisition time is found to significantly decrease the effects of instabilities on the high-resolution images. Contributions from scanning artefacts are also diminished by summing multiple images following a cross-correlation alignment procedure. Combined with the sub-Ångström resolution obtained with an aberration corrector, and the stable dedicated microscope's environment, therapid acquisition method provides the measurements of atomic displacements with accuracy below 10 pm. Finally, the advantages of combining strain measurements with the collection of various analytical signals in a scanning transmission electron microscope are discussed.

Backshort-Under-Grid arrays for infrared astronomy

Science.gov (United States)

Allen, C. A.; Benford, D. J.; Chervenak, J. A.; Chuss, D. T.; Miller, T. M.; Moseley, S. H.; Staguhn, J. G.; Wollack, E. J.

2006-04-01

We are developing a kilopixel, filled bolometer array for space infrared astronomy. The array consists of three individual components, to be merged into a single, working unit; (1) a transition edge sensor bolometer array, operating in the milliKelvin regime, (2) a quarter-wave backshort grid, and (3) superconducting quantum interference device multiplexer readout. The detector array is designed as a filled, square grid of suspended, silicon bolometers with superconducting sensors. The backshort arrays are fabricated separately and will be positioned in the cavities created behind each detector during fabrication. The grids have a unique interlocking feature machined into the walls for positioning and mechanical stability. The spacing of the backshort beneath the detector grid can be set from ˜30 300 μm, by independently adjusting two process parameters during fabrication. The ultimate goal is to develop a large-format array architecture with background-limited sensitivity, suitable for a wide range of wavelengths and applications, to be directly bump bonded to a multiplexer circuit. We have produced prototype two-dimensional arrays having 8×8 detector elements. We present detector design, fabrication overview, and assembly technologies.

Comparison of Thermal Detector Arrays for Off-Axis THz Holography and Real-Time THz Imaging

Directory of Open Access Journals (Sweden)

Erwin Hack

2016-02-01

Full Text Available In terahertz (THz materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8–14 μm wavelength range, but are based on different absorber materials (i vanadium oxide; (ii amorphous silicon; (iii a micro-bolometer array optimized for recording THz radiation based on silicon nitride; and (iv a pyroelectric array detector for THz beam profile measurements. THz wavelengths of 96.5 μm, 118.8 μm, and 393.6 μm from a powerful far infrared laser were used to assess the technical performance in terms of signal to noise ratio, detector response and detectivity. The usefulness of the detectors for beam profiling and digital holography is assessed. Finally, the potential and limitation for real-time digital holography are discussed.

Comparison of Thermal Detector Arrays for Off-Axis THz Holography and Real-Time THz Imaging.

Science.gov (United States)

Hack, Erwin; Valzania, Lorenzo; Gäumann, Gregory; Shalaby, Mostafa; Hauri, Christoph P; Zolliker, Peter

2016-02-06

In terahertz (THz) materials science, imaging by scanning prevails when low power THz sources are used. However, the application of array detectors operating with high power THz sources is increasingly reported. We compare the imaging properties of four different array detectors that are able to record THz radiation directly. Two micro-bolometer arrays are designed for infrared imaging in the 8-14 μm wavelength range, but are based on different absorber materials (i) vanadium oxide; (ii) amorphous silicon; (iii) a micro-bolometer array optimized for recording THz radiation based on silicon nitride; and (iv) a pyroelectric array detector for THz beam profile measurements. THz wavelengths of 96.5 μm, 118.8 μm, and 393.6 μm from a powerful far infrared laser were used to assess the technical performance in terms of signal to noise ratio, detector response and detectivity. The usefulness of the detectors for beam profiling and digital holography is assessed. Finally, the potential and limitation for real-time digital holography are discussed.

Silicon Nanowires for Solar Thermal Energy Harvesting: an Experimental Evaluation on the Trade-off Effects of the Spectral Optical Properties.

Science.gov (United States)

Sekone, Abdoul Karim; Chen, Yu-Bin; Lu, Ming-Chang; Chen, Wen-Kai; Liu, Chia-An; Lee, Ming-Tsang

2016-12-01

Silicon nanowire possesses great potential as the material for renewable energy harvesting and conversion. The significantly reduced spectral reflectivity of silicon nanowire to visible light makes it even more attractive in solar energy applications. However, the benefit of its use for solar thermal energy harvesting remains to be investigated and has so far not been clearly reported. The purpose of this study is to provide practical information and insight into the performance of silicon nanowires in solar thermal energy conversion systems. Spectral hemispherical reflectivity and transmissivity of the black silicon nanowire array on silicon wafer substrate were measured. It was observed that the reflectivity is lower in the visible range but higher in the infrared range compared to the plain silicon wafer. A drying experiment and a theoretical calculation were carried out to directly evaluate the effects of the trade-off between scattering properties at different wavelengths. It is clearly seen that silicon nanowires can improve the solar thermal energy harnessing. The results showed that a 17.8 % increase in the harvest and utilization of solar thermal energy could be achieved using a silicon nanowire array on silicon substrate as compared to that obtained with a plain silicon wafer.

Impact of Improved Heat Sinking of an X-Ray Calorimeter Array on Crosstalk, Noise, and Background Events

Science.gov (United States)

Kilbourne, C. A.; Adams, J. S.; Brekosky, R. P.; Chervenak, J. A.; Chiao, M. P.; Kelley, R. L.; Kelly, D. P.; Porter, F. S.

2011-01-01

The x-ray calorimeter array of the Soft X-ray Spectrometer (SXS) of the Astro-H satellite will incorporate a silicon thermistor array produced during the development of the X-Ray Spectrometer (XRS) of the Suzaku satellite. On XRS, inadequate heat sinking of the array led to several non-ideal effects. The thermal crosstalk, while too small to be confused with x-ray signals, nonetheless contributed a noise term that could be seen as a degradation in energy resolution at high flux. When energy was deposited in the silicon frame around the active elements of the array, such as by a cosmic ray, the resulting pulse in the temperature of the frame resulted in coincident signal pulses on most of the pixels. In orbit, the resolution was found to depend on the particle background rate. In order to minimize these effects on SXS, heat-sinking gold was applied to areas on the front and back of the array die, which was thermally anchored to the gold of its fanout board via gold wire bonds. The thermal conductance from the silicon chip to the fanout board was improved over that of XRS by an order of magnitude. This change was sufficient for essentially eliminating frame events and allowing high-resolution to be attained at much higher counting rates. We will present the improved performance, the measured crosstalk, and the results of the thermal characterization of such arrays.

Ordered arrays of embedded Ga nanoparticles on patterned silicon substrates

International Nuclear Information System (INIS)

Bollani, M; Bietti, S; Sanguinetti, S; Frigeri, C; Chrastina, D; Reyes, K; Smereka, P; Millunchick, J M; Vanacore, G M; Tagliaferri, A; Burghammer, M

2014-01-01

We fabricate site-controlled, ordered arrays of embedded Ga nanoparticles on Si, using a combination of substrate patterning and molecular-beam epitaxial growth. The fabrication process consists of two steps. Ga droplets are initially nucleated in an ordered array of inverted pyramidal pits, and then partially crystallized by exposure to an As flux, which promotes the formation of a GaAs shell that seals the Ga nanoparticle within two semiconductor layers. The nanoparticle formation process has been investigated through a combination of extensive chemical and structural characterization and theoretical kinetic Monte Carlo simulations. (papers)

Microfabricated hollow microneedle array using ICP etcher

Science.gov (United States)

Ji, Jing; Tay, Francis E. H.; Miao, Jianmin

2006-04-01

This paper presents a developed process for fabrication of hollow silicon microneedle arrays. The inner hollow hole and the fluidic reservoir are fabricated in deep reactive ion etching. The profile of outside needles is achieved by the developed fabrication process, which combined isotropic etching and anisotropic etching with inductively coupled plasma (ICP) etcher. Using the combination of SF6/O2 isotropic etching chemistry and Bosch process, the high aspect ratio 3D and high density microneedle arrays are fabricated. The generated needle external geometry can be controlled by etching variables in the isotropic and anisotropic cases.

Microfabricated hollow microneedle array using ICP etcher

International Nuclear Information System (INIS)

Ji Jing; Tay, Francis E H; Miao Jianmin

2006-01-01

This paper presents a developed process for fabrication of hollow silicon microneedle arrays. The inner hollow hole and the fluidic reservoir are fabricated in deep reactive ion etching. The profile of outside needles is achieved by the developed fabrication process, which combined isotropic etching and anisotropic etching with inductively coupled plasma (ICP) etcher. Using the combination of SF 6 /O 2 isotropic etching chemistry and Bosch process, the high aspect ratio 3D and high density microneedle arrays are fabricated. The generated needle external geometry can be controlled by etching variables in the isotropic and anisotropic cases

Microfabricated hollow microneedle array using ICP etcher

Energy Technology Data Exchange (ETDEWEB)

Ji Jing [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Tay, Francis E H [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Miao Jianmin [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore)

2006-04-01

This paper presents a developed process for fabrication of hollow silicon microneedle arrays. The inner hollow hole and the fluidic reservoir are fabricated in deep reactive ion etching. The profile of outside needles is achieved by the developed fabrication process, which combined isotropic etching and anisotropic etching with inductively coupled plasma (ICP) etcher. Using the combination of SF{sub 6}/O{sub 2} isotropic etching chemistry and Bosch process, the high aspect ratio 3D and high density microneedle arrays are fabricated. The generated needle external geometry can be controlled by etching variables in the isotropic and anisotropic cases.

Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires

International Nuclear Information System (INIS)

Ozdemir, Baris; Unalan, Husnu Emrah; Kulakci, Mustafa; Turan, Rasit

2011-01-01

Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed by field emission scanning electron microscope (FE-SEM) and a linear dependency of nanowire length to both temperature and time was obtained and the change in the growth rate of Si NWs at increased etching durations was shown. Furthermore, the effects of EE parameters on the optical reflectivity of the Si NWs were investigated in this study. Reflectivity measurements show that the 42.8% reflectivity of the starting silicon wafer drops to 1.3%, recorded for 10 μm long Si NW arrays. The remarkable decrease in optical reflectivity indicates that Si NWs have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.

Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires.

Science.gov (United States)

Ozdemir, Baris; Kulakci, Mustafa; Turan, Rasit; Unalan, Husnu Emrah

2011-04-15

Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed by field emission scanning electron microscope (FE-SEM) and a linear dependency of nanowire length to both temperature and time was obtained and the change in the growth rate of Si NWs at increased etching durations was shown. Furthermore, the effects of EE parameters on the optical reflectivity of the Si NWs were investigated in this study. Reflectivity measurements show that the 42.8% reflectivity of the starting silicon wafer drops to 1.3%, recorded for 10 µm long Si NW arrays. The remarkable decrease in optical reflectivity indicates that Si NWs have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.

Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires

Science.gov (United States)

Ozdemir, Baris; Kulakci, Mustafa; Turan, Rasit; Emrah Unalan, Husnu

2011-04-01

Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed by field emission scanning electron microscope (FE-SEM) and a linear dependency of nanowire length to both temperature and time was obtained and the change in the growth rate of Si NWs at increased etching durations was shown. Furthermore, the effects of EE parameters on the optical reflectivity of the Si NWs were investigated in this study. Reflectivity measurements show that the 42.8% reflectivity of the starting silicon wafer drops to 1.3%, recorded for 10 µm long Si NW arrays. The remarkable decrease in optical reflectivity indicates that Si NWs have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.

RTV Silicone Rubber Degradation Induced by Temperature Cycling

Directory of Open Access Journals (Sweden)

Xishan Wen

2017-07-01

Full Text Available Room temperature vulcanized (RTV silicone rubber is extensively used in power system due to its hydrophobicity and hydrophobicity transfer ability. Temperature has been proven to markedly affect the performance of silicone rubbers. This research investigated the degradation of RTV silicone rubber under temperature cycling treatment. Hydrophobicity and its transfer ability, hardness, functional groups, microscopic appearance, and thermal stability were analyzed using the static contact angle method, a Shore A durometer, Fourier transform infrared spectroscopy (FTIR, scanning electron microscopy (SEM, and thermogravimetry (TG, respectively. Some significant conclusions were drawn. After the temperature was cycled between −25 °C and 70 °C, the hydrophobicity changed modestly, but its transfer ability changed remarkably, which may result from the competition between the formation of more channels for the transfer of low molecular weight (LMW silicone fluid and the reduction of LMW silicone fluid in the bulk. A hardness analysis and FTIR analysis demonstrated that further cross-linking reactions occurred during the treatment. SEM images showed the changes in roughness of the RTV silicone rubber surfaces. TG analysis also demonstrated the degradation of RTV silicone rubber by presenting evidence that the content of organic materials decreased during the temperature cycling treatment.

Development of the H1 backward silicon strip detector

International Nuclear Information System (INIS)

Eick, W.; Hansen, K.; Lange, W.; Prell, S.; Zimmermann, W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Newton, A.M.; Wilburn, C.D.; Horisberger, R.; Pitzl, D.; Haynes, W.J.; Noyes, G.

1996-10-01

The development and first results are described of a silicon strip detector telescope for the HERA experiment H1 designed to measure the polar angle of deep inelastic scattered electrons at small Bjorken x and low momentum transfers Q 2 . (orig.)

Development of the H1 backward silicon strip detector

International Nuclear Information System (INIS)

Eick, W.; Hansen, K.; Lange, W.; Prell, S.; Zimmermann, W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Newton, A.M.; Wilburn, C.D.; Horisberger, R.; Pitzl, D.; Haynes, W.J.; Noyes, G.

1997-01-01

The development and first results are described of a silicon strip detector telescope for the HERA experiment H1 designed to measure the polar angle of deep inelastic scattered electrons at small Bjorken x and low momentum transfers Q 2 . (orig.)

Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

KAUST Repository

Lu, Ming-Pei; Song, Jinhui; Lu, Ming-Yen; Chen, Min-Teng; Gao, Yifan; Chen, Lih-Juann; Wang, Zhong Lin

2009-01-01

Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive

Technology for Solar Array Production on the Moon

Science.gov (United States)

Landis, Geoffrey A.

2002-01-01

Silicon, aluminum, and glass are the primary raw materials that will be required for production of solar arrays on the moon. A process sequence is proposed for producing these materials from lunar regolith is proposed, consisting of separating the required materials from lunar rock with fluorine. Fluorosilane produced by this process is reduced to silicon; the fluorine salts are reduced to metals by reaction with metallic potassium. Fluorine is recovered from residual MgF and CaF2 by reaction with K2O. Aluminum, calcium oxide, and magnesium oxide are recovered to manufacture structural materials and glass.

Simulation of 3-D radiation beam patterns propagated through a planar interface from ultrasonic phased array transducers.

Science.gov (United States)

Song, Sung-Jin; Kim, Chang-Hwan

2002-05-01

Phased array transducers are quite often mounted on solid wedges with specific angles in many practical ultrasonic inspections of thin plates phased array techniques with testing set-up, it is essential to have thorough understanding on the characteristics of radiation beam pattern produced in the interrogated medium. To address such a need, this paper proposes a systematic way to calculate full 3-D radiation beam patterns produced in the interrogated solid medium by phased array transducers mounted on a solid wedge. In order to investigate the characteristics of radiation beam patterns in steel, simulation is carried out for 7.5 MHz array transducers mounted on an acrylic wedge with the angle of 15.45 degrees with various of steering angles and/or focal planes.

Realization of thermally durable close-packed 2D gold nanoparticle arrays using self-assembly and plasma etching

International Nuclear Information System (INIS)

Sivaraman, Sankar K; Santhanam, Venugopal

2012-01-01

Realization of thermally and chemically durable, ordered gold nanostructures using bottom-up self-assembly techniques are essential for applications in a wide range of areas including catalysis, energy generation, and sensing. Herein, we describe a modular process for realizing uniform arrays of gold nanoparticles, with interparticle spacings of 2 nm and above, by using RF plasma etching to remove ligands from self-assembled arrays of ligand-coated gold nanoparticles. Both nanoscale imaging and macroscale spectroscopic characterization techniques were used to determine the optimal conditions for plasma etching, namely RF power, operating pressure, duration of treatment, and type of gas. We then studied the effect of nanoparticle size, interparticle spacing, and type of substrate on the thermal durability of plasma-treated and untreated nanoparticle arrays. Plasma-treated arrays showed enhanced chemical and thermal durability, on account of the removal of ligands. To illustrate the application potential of the developed process, robust SERS (surface-enhanced Raman scattering) substrates were formed using plasma-treated arrays of silver-coated gold nanoparticles that had a silicon wafer or photopaper as the underlying support. The measured value of the average SERS enhancement factor (2 × 10 5 ) was quantitatively reproducible on both silicon and paper substrates. The silicon substrates gave quantitatively reproducible results even after thermal annealing. The paper-based SERS substrate was also used to swab and detect probe molecules deposited on a solid surface. (paper)

Variable angle asymmetric cut monochromator

International Nuclear Information System (INIS)

Smither, R.K.; Fernandez, P.B.

1993-09-01

A variable incident angle, asymmetric cut, double crystal monochromator was tested for use on beamlines at the Advanced Photon Source (APS). For both undulator and wiggler beams the monochromator can expand area of footprint of beam on surface of the crystals to 50 times the area of incident beam; this will reduce the slope errors by a factor of 2500. The asymmetric cut allows one to increase the acceptance angle for incident radiation and obtain a better match to the opening angle of the incident beam. This can increase intensity of the diffracted beam by a factor of 2 to 5 and can make the beam more monochromatic, as well. The monochromator consists of two matched, asymmetric cut (18 degrees), silicon crystals mounted so that they can be rotated about three independent axes. Rotation around the first axis controls the Bragg angle. The second rotation axis is perpendicular to the diffraction planes and controls the increase of the area of the footprint of the beam on the crystal surface. Rotation around the third axis controls the angle between the surface of the crystal and the wider, horizontal axis for the beam and can make the footprint a rectangle with a minimum. length for this area. The asymmetric cut is 18 degrees for the matched pair of crystals, which allows one to expand the footprint area by a factor of 50 for Bragg angles up to 19.15 degrees (6 keV for Si[111] planes). This monochromator, with proper cooling, will be useful for analyzing the high intensity x-ray beams produced by both undulators and wigglers at the APS

Transverse wave propagation in [ab0] direction of silicon single crystal

Energy Technology Data Exchange (ETDEWEB)

Yun, Sang Jin; Kim, Hye Jeong; Kwon, Se Ho; Kim, Young H. [Applied Acoustics Lab, Korea Science Academy of KAIST, Busan(Korea, Republic of)

2015-12-15

The speed and oscillation directions of elastic waves propagating in the [ab0] direction of a silicon single crystal were obtained by solving Christoffel's equation. It was found that the quasi waves propagate in the off-principal axis, and hence, the directions of the phase and group velocities are not the same. The maximum deviation of the two directions was 7.2 degree angle. Two modes of the pure transverse waves propagate in the [110] direction with different speeds, and hence, two peaks were observed in the pulse echo signal. The amplitude ratio of the two peaks was dependent on the initial oscillating direction of the incident wave. The pure and quasi-transverse waves propagate in the [210] direction, and the oscillation directions of these waves are perpendicular to each other. The skewing angle of the quasi wave was calculated as 7.14 degree angle, and it was measured as 9.76 degree angle. The amplitude decomposition in the [210] direction was similar to that in the [110] direction, since the oscillation directions of these waves are perpendicular to each other. These results offer useful information in measuring the crystal orientation of the silicon single crystal.

Dynamic Control of Plasmon-Exciton Coupling in Au Nanodisk–J-Aggregate Hybrid Nanostructure Arrays

KAUST Repository

Zheng, Yue Bing; Juluri, Bala Krishna; Jensen, Linlin; Jensen, Lasse; Huang, Tony Jun

2009-01-01

We report the dynamic control of plasmon-exciton coupling in Au nanodisk arrays adsorbed with J-aggregate molecules by incident angle of light. The angle-resolved spectra of an array of bare Au nanodisks exhibit continuous shifting of localized surface plasmon resonances. This characteristic enables the production of real-time, controllable spectral overlaps between molecular and plasmonic resonances, and the efficient measurement of plasmon-exciton coupling as a function of wavelength with one or fewer nanodisk arrays. Experimental observations of varying plasmon-exciton coupling match with coupled dipole approximation calculations.

Anomalous refraction of light through slanted-nanoaperture arrays on metal surface

International Nuclear Information System (INIS)

Kim, Myungji; Jung, Yun Suk; Xi, Yonggang; Kim, Hong Koo

2015-01-01

We report a nanoapertured metal surface that demonstrates anomalous refraction of light for a wide range of incident angles. A nanoslit aperture is designed to serve as a tilted vertical-dipole whose radiation pattern orients to a glancing angle direction to substrate. An array of such slanted nanoslits formed in a metal film redirects an incident beam into the direction of negative refraction angle: the aperture-transmitted wave makes a far-field propagation to the tilt-oriented direction of radiation pattern. The thus-designed nanoaperture array demonstrates the −1st order diffraction (i.e., to the negative refraction-angle direction) with well-suppressed background transmission (the zero-order direct transmission and other higher-order diffractions). Engineering the radiation pattern of nanoaperture offers an approach to overcoming the limits of conventional diffractive/refractive optics and complementing metasurface-based nano-optics

Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Wildermuth, D.; Goodman, C.; Fujieda, I.

1992-07-01

We describe the characteristics of thin (1 μm) and thick (> 30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-ray, γ rays and thermal neutrons. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2∼5 μm) gadolinium converters on 30 μm thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described

Fabrication of the GLAST Silicon Tracker Readout Electronics

Energy Technology Data Exchange (ETDEWEB)

Baldini, Luca; Brez, Alessandro; Himel, Thomas; Johnson, R.P.; Latronico, Luca; Minuti, Massimo; Nelson, David; Sadrozinski, H.F.-W.; Sgro, Carmelo; Spandre, Gloria; Sugizaki, Mutsumi; Tajima, Hiro; Cohen Tanugi, Johann; Young, Charles; Ziegler, Marcus; /Pisa U. /INFN, Pisa /SLAC /UC, Santa Cruz

2006-03-03

A unique electronics system has been built and tested for reading signals from the silicon-strip detectors of the Gamma-ray Large Area Space Telescope mission. The system amplifies and processes signals from 884,736 36-cm long silicon strips in a 4 x 4 array of tower modules. An aggressive mechanical design fits the readout electronics in narrow spaces between the tower modules, to minimize dead area. This design and the resulting departures from conventional electronics packaging led to several fabrication challenges and lessons learned. This paper describes the fabrication processes and how the problems peculiar to this design were overcome.

Characterization of photovoltaic array performance: an overview

Energy Technology Data Exchange (ETDEWEB)

Ross, Jr., R. G.

1986-09-15

Characterization of the electrical performance of a photovoltaic array can take many forms depending on the end use of the data. Typical uses include buyer-seller negotiations, system performance prediction, and performance measurement. Buyer-seller negotiations may deal with specifying the size (power) of an array to be purchased under some standard reporting conditions, and may treat the warranty conditions governing allowable degradation of this performance with time. System design, on the other hand, requires prediction of performance under varying field conditions, not standard reporting conditions, and must include the non-ideal realities of operating systems: array shadowing, steep angles of incidence, soiling, and array-load energy utilization. Typical uses of predicted array performance include array sizing tradeoffs, tracking-pointing comparisons, load-array interface analyses and system economic evaluations. The third use, performance measurement, refers to the characterization of an as-built array as opposed to prediction of the performance of an array to be built. This may be done to assess actual array performance or to measure performance degradation over time.

Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

Directory of Open Access Journals (Sweden)

Chien-Wei Liu

2012-01-01

Full Text Available Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

Experimental investigation of laminar flow across short micro pin fin arrays

International Nuclear Information System (INIS)

Guo, Dongzhi; Yao, Shi-Chune; Gao, Jinsheng; Santhanam, Suresh

2014-01-01

The pressure drop and friction factor of gas flow across an array of circular silicon micro-pillars with different diameters fabricated by deep reactive ion etch (DRIE) process were investigated. The pitch-to-diameter ratio (1.5  <  S T /d  <  2.3) and the height-to-diameter aspect ratio (0.48  <  H/d  <  2.28) were found to affect the friction factor of the pillar array significantly. A new correlation, which considered the coupled effect of pillar spacing and aspect ratio, was proposed to predict the friction factor in a Reynolds number range of 1–100. Silicon pillars with large artificial roughness amplitudes were also fabricated, and the effect of the roughness was studied in the laminar flow region. The results demonstrated that the pressure drop and the friction factor were reduced significantly (more than 50%) for the pillar array with a large artificial roughness, which may be used to improve the cooling efficiency for the regenerator structures in micro-coolers. (paper)

Silicon wafer wettability and aging behaviors: Impact on gold thin-film morphology

KAUST Repository

Yang, Xiaoming

2014-10-01

This paper reports on the wettability and aging behaviors of the silicon wafers that had been cleaned using a piranha (3:1 mixture of sulfuric acid (H2SO4, 96%) and hydrogen peroxide (H2O 2, 30%), 120 °C), SC1 (1:1:5 mixture of NH4OH, H 2O2 and H2O, at 80°C) or HF solution (6 parts of 40% NH4F and 1 part of 49% HF, at room temperature) solution, and treated with gaseous plasma. The silicon wafers cleaned using the piranha or SC1 solution were hydrophilic, and the water contact angles on the surfaces would increase along with aging time, until they reached the saturated points of around 70°. The contact angle increase rate of these wafers in a vacuum was much faster than that in the open air, because of loss of water, which was physically adsorbed on the wafer surfaces. The silicon wafers cleaned with the HF solution were hydrophobic. Their contact angle decreased in the atmosphere, while it increased in the vacuum up to 95°. Gold thin films deposited on the hydrophilic wafers were smoother than that deposited on the hydrophobic wafers, because the numerous oxygen groups formed on the hydrophilic surfaces would react with gold adatoms in the sputtering process to form a continuous thin film at the nucleation stage. The argon, nitrogen, oxygen gas plasma treatments could change the silicon wafer surfaces from hydrophobic to hydrophilic by creating a thin (around 2.5 nm) silicon dioxide film, which could be utilized to improve the roughness and adhesion of the gold thin film. © 2014 Elsevier Ltd. All rights reserved.

Silicon wafer wettability and aging behaviors: Impact on gold thin-film morphology

KAUST Repository

Yang, Xiaoming; Zhong, Zhaowei; Diallo, Elhadj; Wang, Zhihong; Yue, Weisheng

2014-01-01

This paper reports on the wettability and aging behaviors of the silicon wafers that had been cleaned using a piranha (3:1 mixture of sulfuric acid (H2SO4, 96%) and hydrogen peroxide (H2O 2, 30%), 120 °C), SC1 (1:1:5 mixture of NH4OH, H 2O2 and H2O, at 80°C) or HF solution (6 parts of 40% NH4F and 1 part of 49% HF, at room temperature) solution, and treated with gaseous plasma. The silicon wafers cleaned using the piranha or SC1 solution were hydrophilic, and the water contact angles on the surfaces would increase along with aging time, until they reached the saturated points of around 70°. The contact angle increase rate of these wafers in a vacuum was much faster than that in the open air, because of loss of water, which was physically adsorbed on the wafer surfaces. The silicon wafers cleaned with the HF solution were hydrophobic. Their contact angle decreased in the atmosphere, while it increased in the vacuum up to 95°. Gold thin films deposited on the hydrophilic wafers were smoother than that deposited on the hydrophobic wafers, because the numerous oxygen groups formed on the hydrophilic surfaces would react with gold adatoms in the sputtering process to form a continuous thin film at the nucleation stage. The argon, nitrogen, oxygen gas plasma treatments could change the silicon wafer surfaces from hydrophobic to hydrophilic by creating a thin (around 2.5 nm) silicon dioxide film, which could be utilized to improve the roughness and adhesion of the gold thin film. © 2014 Elsevier Ltd. All rights reserved.

Phased Arrays 1985 Symposium - Proceedings

Science.gov (United States)

1985-08-01

anjl with an1 au~ U lar fy b)eanir. ( mice the 1311 0 ,0 - (a ) ,[ -40.0. -80𔃺 , -90.0 -45.0 0𔃺 45.0 90.0 ANGLE FROM BROADSIDE (DEGREES) aii ia -40,0...Electronic Scanning", RADC-TR-83-128, Dec. 1983. AL) A138808 222 m " ; . . . • " - " - . . . . -" ARRAYS OF COAXIALIY-FED MONOPOLE ELEMENTS IN A PARALLEL...Research Institute Hanscom AFB, MA 01731 Farmingdale, NY 11735 AB ST RAC U Arrays of coaxially-fed monopoles radiating into a parallel plate region

Combined surgical management of mandibular angle prominence and microgenia

International Nuclear Information System (INIS)

Portelles Masso, Ayelen Maria; Berger Kohn, Carlos

2010-01-01

Chin play a very important role in facial aesthetics. Different deformities of volume and of position may occur at this level and it is the microgenia one of the more frequent. Treatment options include the use of silicone, alloplasty materials and autologous bone graft. Authors report the use of the bone removed from mandibular angle to increase the chin. This is the case of a white female patient aged 18 seen by the Orthognathics Multidisciplinary Staff of 'V. I. Lenin' Hospital due to its uncommon face width. The corresponding physical examination as well as the complementary ones diagnosed a bilateral prominence of mandibular angle associated with a microgenia. Surgery carried out was of remodeling type of both mandibular angles and genioplasty of height increase and a discrete advancement using the bone removed from the gonion. There were satisfactory aesthetic results without evidence of bone reabsorption. We conclude that use of autologous graft of mandibular angle is an effective treatment alternative for correction of microgenia. (author)

Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Carey, JE; Mazur, E

2005-05-19

With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

Quantum Dot Laser for a Light Source of an Athermal Silicon Optical Interposer

Directory of Open Access Journals (Sweden)

Nobuaki Hatori

2015-04-01

Full Text Available This paper reports a hybrid integrated light source fabricated on a silicon platform using a 1.3 μm wavelength quantum dot array laser. Temperature insensitive characteristics up to 120 °C were achieved by the optimum quantum dot structure and laser structure. Light output power was obtained that was high enough to achieve an optical error-free link of a silicon optical interposer. Furthermore, we investigated a novel spot size convertor in a silicon waveguide suitable for a quantum dot laser for lower energy cost operation of the optical interposer.

Photo-Electrical Characterization of Silicon Micropillar Arrays with Radial p/n Junctions Containing Passivation and Anti-Reflection Coatings

NARCIS (Netherlands)

Vijselaar, Wouter; Elbersen, R.; Tiggelaar, Roald M.; Gardeniers, Han; Huskens, Jurriaan

2017-01-01

In order to assess the contributions of anti-reflective and passivation effects in microstructured silicon-based solar light harvesting devices, thin layers of aluminum oxide (Al2O3), silicon dioxide (SiO2), silicon-rich silicon nitride (SiNx), and indium tin oxide (ITO), with a thickness ranging

An All Silicon Feedhorn-Coupled Focal Plane for Cosmic Microwave Background Polarimetry

Science.gov (United States)

Hubmayr, J.; Appel, J. W.; Austermann, J. E.; Beall, J. A.; Becker, D.; Benson, B. A.; Bleem, L. E.; Carlstrom, J. E.; Chang, C. L.; Cho, H. M.;